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Sample records for focused mev ion

  1. Study of tapered glass capillary focusing MeV ion beam

    International Nuclear Information System (INIS)

    Gong Zhiyu; Yan Sha; Ma Hongji; Nie Rui; Xue Jianming; Wang Yugang

    2012-01-01

    In recent years, tapered glass capillary ion beam focusing is developing rapidly. It is attractive for simple, compact, low cost and easy use. However, the focusing mechanism for MeV ion beams is still indistinct. We present several experimental results of focusing 2 MeV He + beam. Ion beams were focused by tapered glass capillaries with various outlet inner diameters from several micron to hundred micron. The current densities, angle divergences and energy spectra of the transmitted ion beams are measured. The results proved that 2 MeV He + ions can focused and guided by our capillaries. The energy spectra show that a great part of transmitted ions experienced obvious energy loss, which is different from results of others research groups. We discussed the reason and charged it to the larger incident angle. Considered the incident ions with larger incident angle, the charge will distribute in a layer of micro meter depth in the capillary’s inner wall, but not the surface. The energy loss and many other spectra characters can be explained in this way.

  2. Applications of focused MeV light ion beams for high resolution channeling contrast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D N; Breese, M B.H.; Prawer, S; Dooley, S P; Allen, M G; Bettiol, A A; Saint, A [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Ryan, C G [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1994-12-31

    The technique of Nuclear Microscopy, utilizing a focused ion probe of typically MeV H{sup +} or He{sup +} ions, can produce images where the contrast depends on typical Ion Beam Analysis (lBA) processes. The probe forming lens system usually utilizes strong focusing, precision magnetic quadrupole lenses and the probe is scanned over the target to produce images. Originally, this imaging technique was developed to utilize backscattered particles with incident beam currents typically of a few nA, and the technique became known as Channeling Contrast Microscopy (CCM). Recently, the technique has been developed further to utilize the forward scattering of ions incident along a major crystal axis in thin crystals. This technique is known as Channeling Scanning Transmission Ion Microscopy (CSTIM). Since nearly all incident ions are detected, CSTIM is highly efficient and very low beam currents are sufficient for imaging, typically as low as a few fA. This allows probes as small as 50 nm to be used. In this paper we briefly review the recent applications of these emerging techniques to a variety of single crystal materials (authors). 13 refs., 5 figs.

  3. Applications of focused MeV light ion beams for high resolution channeling contrast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D.N.; Breese, M.B.H.; Prawer, S.; Dooley, S.P.; Allen, M.G.; Bettiol, A.A.; Saint, A. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Ryan, C.G. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1993-12-31

    The technique of Nuclear Microscopy, utilizing a focused ion probe of typically MeV H{sup +} or He{sup +} ions, can produce images where the contrast depends on typical Ion Beam Analysis (lBA) processes. The probe forming lens system usually utilizes strong focusing, precision magnetic quadrupole lenses and the probe is scanned over the target to produce images. Originally, this imaging technique was developed to utilize backscattered particles with incident beam currents typically of a few nA, and the technique became known as Channeling Contrast Microscopy (CCM). Recently, the technique has been developed further to utilize the forward scattering of ions incident along a major crystal axis in thin crystals. This technique is known as Channeling Scanning Transmission Ion Microscopy (CSTIM). Since nearly all incident ions are detected, CSTIM is highly efficient and very low beam currents are sufficient for imaging, typically as low as a few fA. This allows probes as small as 50 nm to be used. In this paper we briefly review the recent applications of these emerging techniques to a variety of single crystal materials (authors). 13 refs., 5 figs.

  4. Improvement in beam quality of the JAEA AVF cyclotron for focusing heavy-ion beams with energies of hundreds of MeV

    International Nuclear Information System (INIS)

    Kurashima, Satoshi; Miyawaki, Nobumasa; Okumura, Susumu; Oikawa, Masakazu; Yoshida, Ken-ichi; Kamiya, Tomihiro; Fukuda, Mitsuhiro; Satoh, Takahiro; Nara, Takayuki; Agematsu, Takashi; Ishibori, Ikuo; Yokota, Watalu; Nakamura, Yoshiteru

    2007-01-01

    In order to achieve a heavy-ion microbeam with an energy of hundreds of MeV applied to the research fields of biotechnology and materials science, the JAEA AVF cyclotron (K = 110) has been upgraded to provide a high quality beam with a smaller energy spread and a higher current stability. A flat-top (FT) acceleration system of the cyclotron, designed to produce ion beams with an energy spread of ΔE/E ≤ 0.02%, has been developed to reduce chromatic aberrations in the lenses of the focusing microbeam system. The FT acceleration system provides uniform energy gain of the beam by superimposing a fifth-harmonic voltage on the fundamental one. In addition, stabilization of the acceleration rf voltage and the phase were achieved to accelerate the high quality beam and to provide it stably to the microbeam system connected to a cyclotron beam line. In the latest experiment, we have succeeded to accelerate 260 MeV 20 Ne 7+ with an energy spread of 0.05% in FWHM using the FT acceleration system

  5. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  6. Collective focusing ion accelerator

    International Nuclear Information System (INIS)

    Goldin, F.J.

    1986-01-01

    The principal subject of this dissertation is the trapping confinement of pure electron plasmas in bumpy toroidal magnetic fields, with particular attention given to the trapping procedure and the behavior of the plasma during the final equilibrium. The most important aspects of the equilibrium studied were the qualitative nature of the plasma configuration and motion and its density, distribution and stability. The motivation for this study was that an unneutralized cloud of electrons contained in a toroidal system, sufficiently dense and stable, may serve to electrostatically focus ions (against centrifugal and self space charge forces) in a cyclic ion accelerator. Such an accelerator, known as a Collective Focusing Ion Accelerator (CFIA) could be far smaller than conventional designs (which use external magnetic fields directly to focus the ions) due to the smaller gyro-radium of an electron in a magnetic field of given strength. The electron cloud generally drifted poloidally at a finite radius from the toroidal minor axis. As this would preclude focusing ions with such clouds, damping this motion was investigated. Finite resistance in the normally perfectly conductive vessel wall did this. In further preparation for a working CFIA, additional experiments studied the effect of ions on the stability of the electron cloud

  7. Plasma focus as an heavy ion source in the problem of heavy ion fusion

    International Nuclear Information System (INIS)

    Gribkov, V.A.; Dubrovskij, A.V.; Kalachev, N.V.; Krokhin, O.N.; Silin, P.V.; Nikulin, V.Ya.; Cheblukov, Yu.N.

    1984-01-01

    Results of experiments on the ion flux formation in a plasma focus (PF) to develop a multicharged ion source for thermonuclear facility driver are presented. In plasma focus accelerating section copper ions were injected. Advantages of the suggested method of ion beam formation are demonstrated. Beam emittance equalling < 0.1 cmxmrad is obtained. Plasma focus ion energy exceeds 1 MeV. Plasma focus in combination with a neodymium laser is thought to be a perspective ion source for heavy ion fusion

  8. Identification and imaging of modern paints using Secondary Ion Mass Spectrometry with MeV ions

    DEFF Research Database (Denmark)

    Bogdanović Radović, Iva; Siketić, Zdravko; Jembrih-Simbürger, Dubravka

    2017-01-01

    Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could be identi......Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could...... be identified in different paint samples with a high efficiency and in a single measurement. Different ways of mounting of mostly insulating paint samples were tested prior to the analysis in order to achieve the highest possible yield of pigment main molecular ions. As Time-of-Flight mass spectrometer for Me......V Secondary Ion Mass Spectrometry is attached to the heavy ion microprobe, molecular imaging on cross-sections of small paint fragments was performed using focused ions. Due to the fact that molecules are extracted from the uppermost layer of the sample and to avoid surface contamination, the paint samples...

  9. MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

    OpenAIRE

    I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

    2014-01-01

    The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

  10. DC and RF ion accelerators for MeV energies

    International Nuclear Information System (INIS)

    Urbanus, W.H.

    1990-01-01

    This thesis deals with the transport and acceleration of intense ion beams in single-ended Van de Graaff accelerators and the multiple beam rf accelerator MEQALAC (Multiple Electrostatic Quadrupole Array Linear Accelerator). Ch. 2 discusses several beam-envelope calculation techniques and describes the ion-optical components of a 1 MV, high-current, heavy-ion implantation facility and a 2 MV facility for analyzing purposes. The X-ray level of these accelerators is kept low, such that no shielding is needed, by keeping the energy of the secondary electrons sufficiently low, which is accomplished by a suppression system of small permanent magnets built in the acceleration tubes (ch. 3). Ch.'s 4,5 and 6 cover various aspects of stage II of the MEQALAC project. This stage deals with the parallel acceleration of four high-current N + beams from 40 keV to 1 MeV. Acceleration takes place in 32 rf gaps which are part of a modified interdigital H-resonator. In between the accelerating gaps, small electrostatic quadrupoles are mounted, which oppose the space charge forces of the intense ion beams. The lenses are arranged in a periodic focusing structure. A bucket-type plasma ion source is used, which produces both N + and N 2 + ions. In between the ion source and the MEQALAC section, a Low Energy Beam Transport (LEBT) section is mounted which provides for the drift space for a buncher. The latter device transforms the extracted dc beams into bunched beams which are accepted by the MEQALAC section. In ch. 4 the transport of ion beams that contain both N + and N 2 + ions, so-called mixed beams, through the LEBT section is discussed and equations for the current limit of a mixed beam are derived. Bunching of mixed N + , N 2 + beams is discussed in ch. 5. Multichannel acceleration of N + ions with the MEQALAC is discussed in ch. 6. (author). 122 refs.; 67 figs.; 1 tab

  11. Identification and imaging of modern paints using Secondary Ion Mass Spectrometry with MeV ions

    Science.gov (United States)

    Bogdanović Radović, Iva; Siketić, Zdravko; Jembrih-Simbürger, Dubravka; Marković, Nikola; Anghelone, Marta; Stoytschew, Valentin; Jakšić, Milko

    2017-09-01

    Secondary Ion Mass Spectrometry using MeV ion excitation was applied to analyse modern paint materials containing synthetic organic pigments and binders. It was demonstrated that synthetic organic pigments and binder components with molecular masses in the m/z range from 1 to 1200 could be identified in different paint samples with a high efficiency and in a single measurement. Different ways of mounting of mostly insulating paint samples were tested prior to the analysis in order to achieve the highest possible yield of pigment main molecular ions. As Time-of-Flight mass spectrometer for MeV Secondary Ion Mass Spectrometry is attached to the heavy ion microprobe, molecular imaging on cross-sections of small paint fragments was performed using focused ions. Due to the fact that molecules are extracted from the uppermost layer of the sample and to avoid surface contamination, the paint samples were not embedded in the resin as is usually done when imaging of paint samples using different techniques in the field of cultural heritage.

  12. Focused ion beam technology

    International Nuclear Information System (INIS)

    Gamo, K.

    1993-01-01

    Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author)

  13. Theoretical study of cylindrical energy analyzers for MeV range heavy ion beam probes

    International Nuclear Information System (INIS)

    Fujisawa, A.; Hamada, Y.

    1993-07-01

    A cylindrical energy analyzer with drift spaces is shown to have a second order focusing for beam incident angle when the deflection angle is properly chosen. The analyzer has a possibility to be applied to MeV range heavy ion beam probes, and will be also available for accurate particle energy measurements in many other fields. (author)

  14. 0,01-5 MeV heavy ion accelerators

    International Nuclear Information System (INIS)

    Golubev, V.P.; Ivanov, A.S.; Nikiforov, S.A.; Svin'in, M.P.; Tarvid, G.V.; Troshikhin, A.G.; Fedotov, M.T.

    1983-01-01

    The results of development of an accelerating complex on the base of the UP-2-1 heavy ion charge exchange accelerator and IMPLANT-500 high-voltage heavy ion accelerator are given. The accelerating complex provides overlapping of the 0.01 MeV to 5 MeV energy range at accelerated beam currents of 10 -3 -10 -6 A order. The structural features of accelerators and their basic units and systems are considered. The UP-2-1 accelerator is designed for researches in the field of experimental physics and applied problem solutions. The IMPLANT-500 accelerator is designed for commercial ion-beam facilities with closed loop of silicon plate treatment

  15. Ion beam generation and focusing

    International Nuclear Information System (INIS)

    Miller, P.A.; Mendel, C.W.; Swain, D.W.; Goldstein, S.A.

    1975-01-01

    Calculations have shown that efficiently generated and focused ion beams could have significant advantages over electron beams in achieving ignition of inertially-confined thermonuclear fuel. Efficient ion beam generation implies use of a good ion source and suppression of net electron current. Net electron flow can be reduced by allowing electrons to reflex through a highly transparent anode or by use of transverse magnetic fields (either beam self-fields or externally applied fields). Geometric focusing can be achieved if the beam is generated by appropriately shaped electrodes. Experimental results are presented which demonstrate ion beam generation in both reflexing and pinched-flow diodes. Spherically shaped electrodes are used to concentrate a proton beam, and target response to proton deposition is studied

  16. Development of an MeV ion beam lithography system in Jyvaeskylae

    Energy Technology Data Exchange (ETDEWEB)

    Gorelick, Sergey [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)]. E-mail: Sergey.Gorelick@phys.jyu.fi; Ylimaeki, Tommi [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sajavaara, Timo [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Laitinen, Mikko [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Sagari, A.R.A. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland); Whitlow, Harry J. [Department of Physics, University of Jyvaeskylae, P.O. Box 35, FIN-40014 (Finland)

    2007-07-15

    A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyvaeskylae cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5-500 {mu}m side with protons up to 6 MeV and heavy ions ({sup 20}Ne, {sup 85}Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography systems.

  17. Microbeam line of MeV heavy ions for materials modification and in-situ analysis

    International Nuclear Information System (INIS)

    Horino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satoh, Mamoru; Takai, Mikio.

    1990-01-01

    A microbeam line for MeV heavy ions of almost any element has been developed for microion-beam processing such as maskless MeV ion implantation and its in-situ analysis. Beam spot sizes of 4.0 μm x 4.0 μm for 3 MeV C 2+ and 9.6 μm x 4.8 μm for 1.8 MeV Au 2+ beams were obtained. Maskless MeV gold ion implantation to a silicon substrate and in-situ microanalysis before and after ion implantation were demonstrated. (author)

  18. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A A; Jamieson, D N; Prawer, S; Allen, M G [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1994-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  19. Ion beam induced luminescence from diamond using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Bettiol, A.A.; Jamieson, D. N.; Prawer, S.; Allen, M.G. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Analysis of the luminescence induced by a MeV ion beam offers the potential to provide useful information about the chemical properties of atoms in crystals to complement the information provided by more traditional Ion Beam Analysis (IBA) such as Rutherford Backscattering Spectrometry (RBS), ion channeling and Particle Induced X-ray Emission (PIXE). Furthermore, the large penetration depth of the MeV ion beam offers several advantages over the relatively shallow penetration of keV electrons typically employed in cathodoluminescence. An Ion Beam Induced Luminescence (IBIL) detection system was developed for the Melbourne microprobe that allows the spatial mapping of the luminescence signal along with the signals from RBS and PIXE. Homoepitaxial diamond growth has been studied and remarkable shifts in the characteristic blue luminescence of diamond towards the green were observed in the overgrowth. This has been tentatively identified as being due to transition metal inclusions in the epitaxial layers. 8 refs., 2 refs.

  20. Ion Beam Extraction by Discrete Ion Focusing

    DEFF Research Database (Denmark)

    2010-01-01

    An apparatus (900) and methods are disclosed for ion beam extraction. In an implementation, the apparatus includes a plasma source (or plasma) (802) and an ion extractor (804). The plasma source is adapted to generate ions and the ion extractor is immersed in the plasma source to extract a fracti...

  1. Ion Motion in the Adiabatic Focuser

    International Nuclear Information System (INIS)

    Henestroza, E.; Sessler, A.M.; Yu, S.S.

    2006-01-01

    In this paper we numerically study the effect of ion motion in an adiabatic focuser, motivated by a recent suggestion that ion motion in an adiabatic focuser might be significant and even preclude operation of the focuser as previously envisioned. It is shown that despite ion motion the adiabatic focuser should work as well as originally envisioned

  2. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M L; Roberts, A; Nugent, K; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  3. Focussed MeV ion beam implanted waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Von Bibra, M.L.; Roberts, A.; Nugent, K.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Single mode buried optical waveguides have been fabricated in fused silica by MeV proton implantation using a focussed hydrogen ion beam. The technique has the potential to direct write waveguide devices and produce multi-layered structures, without the need for intermediate steps such as mask fabrication or layered depositions. A micron resolution Confocal Raman Spectrometer has been used to map the distribution of atomic vacancies that forms the waveguiding region. The results are compared with theoretical calculations. Losses of 3 dB cm{sup -1} have been measured in unannealed samples, which decreases to less than 0.5 dB cm{sup -1} after annealing at 500 degrees Celsius. We describe methods for determining the refractive index distribution of single mode buried waveguides from their output intensity distributions via an inversion of the scalar wave equation. (authors). 5 figs.

  4. A 1MeV, 1A negative ion accelerator test facility

    International Nuclear Information System (INIS)

    Hanada, M.; Dairaku, M.; Inoue, T.; Miyamoto, K.; Ohara, Y.; Okumura, Y.; Watanabe, K.; Yokoyama, K.

    1995-01-01

    For the Proof-of-Principle test of negative ion acceleration up to 1 MeV, the beam energy required for ITER, a negative ion test facility named MeV Test Facility (MTF) and an ion source/accelerator have been designed and constructed. They are designed to produce a 1 MeV H- beam at a low source pressure of 0.13Pa. The MTF has a power supply system, which constituts of a 1MV, 1A, 60 s Cockcroft-Walton type dc high energy generator and power supplies for negative ion generation and extraction (ion source power supplies). The negative ion source/accelerator is composed of a cesiated volume source and a 5-stage, multi-aperture, electrostatic accelerator. The MTF and the ion source/accelerator have been completed, and the accelertion test up to 1 MeV of the H- ions has started. (orig.)

  5. Gabor lens focusing of a negative ion beam

    International Nuclear Information System (INIS)

    Palkovic, J.A.; Mills, F.E.; Schmidt, C.; Young, D.E.

    1989-05-01

    Gabor or plasma lenses have previously been used to focus intense beams of positive ions at energies from 10 keV to 5 MeV. It is the large electrostatic field of the non-neutral plasma in the Gabor lens which is responsible for the focusing. Focusing an ion beam with a given sign of charge in a Gabor lens requires a non-neutral plasma with the opposite sign of charge as the beam. A Gabor lens constructed at Fermilab has been used to focus a 30 keV proton beam with good optical quality. We discuss studies of the action of a Gabor lens on a beam of negative ions. A Gabor lens has been considered for matching an H/sup /minus// beam into an RFQ in the redesign of the low energy section of the Fermilab linac. 9 refs., 3 figs., 1 tab

  6. Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2015-12-15

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Development of focused ion beam systems with various ion species

    International Nuclear Information System (INIS)

    Ji Qing; Leung, K.-N.; King, Tsu-Jae; Jiang Ximan; Appleton, Bill R.

    2005-01-01

    Conventional focused ion beam systems employ a liquid-metal ion source (LMIS) to generate high-brightness beams, such as Ga + beams. Recently there has been an increased need for focused ion beams in areas like biological studies, advanced magnetic-film manufacturing and secondary-ion mass spectroscopy (SIMS). In this article, status of development on focused ion beam systems with ion species such as O 2 + , P + , and B + will be reviewed. Compact columns for forming focused ion beams from low energy (∼3keV), to intermediate energy (∼35keV) are discussed. By using focused ion beams, a SOI MOSFET is fabricated entirely without any masks or resist

  8. A gas ionisation Direct-STIM detector for MeV ion microscopy

    International Nuclear Information System (INIS)

    Norarat, Rattanaporn; Guibert, Edouard; Jeanneret, Patrick; Dellea, Mario; Jenni, Josef; Roux, Adrien; Stoppini, Luc; Whitlow, Harry J.

    2015-01-01

    Direct-Scanning Transmission Ion Microscopy (Direct-STIM) is a powerful technique that yields structural information in sub-cellular whole cell imaging. Usually, a Si p-i-n diode is used in Direct-STIM measurements as a detector. In order to overcome the detrimental effects of radiation damage which appears as a broadening in the energy resolution, we have developed a gas ionisation detector for use with a focused ion beam. The design is based on the ETH Frisch grid-less off-axis Geiger–Müller geometry. It is developed for use in a MeV ion microscope with a standard Oxford Microbeams triplet lens and scanning system. The design has a large available solid angle for other detectors (e.g. proton induced fluorescence). Here we report the performance for imaging ReNcells VM with μm resolution where energy resolutions of <24 keV fwhm could be achieved for 1 MeV protons using isobutane gas

  9. Structural, thermal and optical behavior of 84 MeV oxygen and 120 MeV silicon ions irradiated PES

    International Nuclear Information System (INIS)

    Samra, Kawaljeet Singh; Thakur, Sonika; Singh, Lakhwant

    2011-01-01

    In order to study structural, thermal and optical behavior, thin flat samples of polyethersulfone were irradiated with oxygen and silicon ions. The changes in properties were analyzed using different techniques viz: X-ray diffraction, thermo-gravimetric analysis, Fourier transform infrared, UV-visible and photoluminescence spectroscopy. A noticeable increase in the intensity of X-ray diffraction peaks was observed after irradiation with 84 MeV oxygen ions at low and medium fluences, which may be attributed to radiation-induced cross-linking in polymer. Fourier transform infrared and thermo-gravimetric analysis corroborated the results of X-ray diffraction analysis. No noticeable change in the Fourier transform infrared spectra of oxygen ion irradiated polyethersulfone were observed even at the highest fluence of 1 x 10 13 ions cm -2 , but after irradiation with silicon ions, a reduction in intensity of almost all characteristic bands was revealed. An increase in the activation energy of decomposition of polyethersulfone was observed after irradiation with 84 MeV oxygen ions up to medium fluences but degradation was revealed at higher fluences. Similar trends were observed by photoluminescence analysis.

  10. Electron and ion currents relevant to accurate current integration in MeV ion backscattering spectrometry

    International Nuclear Information System (INIS)

    Matteson, S.; Nicolet, M.A.

    1979-01-01

    The magnitude and characteristics of the currents which flow in the target and the chamber of an MeV ion backscattering spectrometer are examined. Measured energy distributions and the magnitude of high-energy secondary electron currents are reported. An empirical universal curve is shown to fit the energy distribution of secondary electrons for several combinations of ion energy, targets and ion species. The magnitude of tertiary electron currents which arise at the vacuum vessel walls is determined for various experimental situations and is shown to be non-negligible in many cases. An experimental arrangement is described which permits charge integrations to 1% arruracy without restricting access to the target as a Faraday cage does. (Auth.)

  11. Anisotropic deformation of metallo-dielectric core-shell colloids under MeV ion irradiation

    International Nuclear Information System (INIS)

    Penninkhof, J.J.; Dillen, T. van; Roorda, S.; Graf, C.; Blaaderen, A. van; Vredenberg, A.M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO 2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks

  12. Anisotropic deformation of metallo-dielectric core shell colloids under MeV ion irradiation

    Science.gov (United States)

    Penninkhof, J. J.; van Dillen, T.; Roorda, S.; Graf, C.; van Blaaderen, A.; Vredenberg, A. M.; Polman, A.

    2006-01-01

    We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks.

  13. Search for diffusion of counter-passing MeV ions in the TFTR tokamak

    International Nuclear Information System (INIS)

    Zweben, S.J.; Boivin, R.; Chang, C.S.; Hammett, G.; Mynick, H.E.

    1991-07-01

    Confinement studies of MeV ions will play an important role in the research leading to burning plasmas in tokamaks, since any significant radial transport of MeV alpha particles will affect the heating rate or heating profiles of these plasmas. Because the energy, gyroradius, and collisionality of these MeV ions is very different from that of the background plasma, their transport rates cannot be assumed equal to those of the bulk plasma ions. Note that the desired confinement time for 3.5 MeV alphas is set by their thermalization time, which can be up to τ th,α ∼1 sec for the steady-state phase of ITER, requiring D 2 /sec. This is equivalent to over ∼100,000 alpha particle transits of the torus. 28 refs., 24 figs., 2 tabs

  14. Ion Distribution Measurement In Plasma Focus

    International Nuclear Information System (INIS)

    Suryadi; Sunardi; Usada, Widdi; Purwadi, Agus; Zaenuri, Akhmad

    1996-01-01

    Measurement of the Argon ion distribution in plasma focus by using Faraday cup has been done. The intensity of ion beam followed the I Rn rule, n=1,02. In the operation condition of 0,8 mbar and 12,5 kV the current sheath spen 2.2 to 2.4 μsecond in the rundown phase. Cu ion was also been observed in the Faraday cup

  15. XRD study of yttria stabilized zirconia irradiated with 7.3 MeV Fe, 10 MeV I, 16 MeV Au, 200 MeV Xe and 2.2 GeV Au ions

    Energy Technology Data Exchange (ETDEWEB)

    Nakano, K.; Yoshizaki, H. [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Saitoh, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Ishikawa, N. [Tokai Research and Development Center, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Iwase, A., E-mail: iwase@mtr.osakafu-u.ac.jp [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2016-03-01

    To simulate energetic neutron irradiation effects, yttria-stabilized zirconia (YSZ) which is one of the major materials for electrical corrosion potential sensors (ECP sensors) was irradiated with heavy ions at energies ranging from 7.3 MeV to 2.2 GeV. Ion irradiation effects on the lattice structure were analyzed using the X-ray diffraction (XRD). The increase in lattice constant was induced by the ion irradiation. It was dominated by the elastic collision process and not by the electronic excitation process. The lattice disordering which was observed as a broadening of XRD peaks was also induced by the irradiation especially for 200 MeV Xe ion irradiation. The present result suggests that the expansion and/or the disordering of YSZ lattice induced by energetic neutrons may affect the durability of a joint interface between a metal housing and YSZ membrane for the usage of ECP sensors in nuclear power reactors.

  16. Cluster ion-surface interactions: from meV to MeV energies

    Energy Technology Data Exchange (ETDEWEB)

    Nordlund, Kai; Meinander, Kristoffer; Jaervi, Tommi T.; Peltola, Jarkko; Samela, Juha [Accelerator Laboratory, University of Helsinki (Finland)

    2008-07-01

    The nature of cluster ion-surface interactions changes dramatically with the kinetic energy of the incoming cluster species. In this talk I review some of our recent work on the nature of cluster-surface interactions spanning an energy range from a few MeV/cluster to about 1 MeV/cluster and cluster sizes in the range of 10 - 1000 atoms/cluster. In the energy range of a few MeV/cluster ion, the kinetic energy of the incoming ion is insignificant compared to the energy gained when the surface potential energy at the cluster-surface interface is released and partly translated into kinetic energy. Even in this energy regime I show that surprisingly drastic effects can occur. When the energy of the incoming cluster is raised to a few eV/atom, the kinetic energy of the incoming cluster starts to affect the deposition. It will cause the cluster to entirely reform on impact. When the energy is raised to the range of keV's/cluster, the clusters start to penetrate the sample, fairly similar to conventional ion implantation. However, in dense targets the cluster ions may stick close to each other long enough to cause a significant enhancement of the heat spike in the material. Finally, I show that at kinetic energies around 1 MeV/cluster the cluster enhancement of the heat spike may lead to dramatic surface effects.

  17. MeV ion loss during 3He minority heating in TFTR

    International Nuclear Information System (INIS)

    Zweben, S.J.; Hammett, G.; Boivin, R.; Phillips, C.; Wilson, R.

    1992-01-01

    The loss of MeV ions during 3 He ICRH minority heating experiments has been measured using scintillator detectors near the wall of TFTR. The observed MeV ion losses to the bottom (90 degrees poloidal) detector are generally consistent with the expected first-orbit loss of D- 3 He alpha particle fusion products, with an inferred global reaction rate up to ∼10 16 reactions/sec. A qualitatively similar but unexpectedly large loss occurs 45 degrees poloidally below the outer midplane. This additional loss might be due to ICRH tail ions or to ICRH wave-induced loss of previously confined fusion products

  18. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  19. Applications of focused ion beams in microelectronics

    International Nuclear Information System (INIS)

    Broughton, C.; Beale, M.I.J.; Deshmukh, V.G.I.

    1986-04-01

    We present the conclusions of the RSRE programme on the application of focused ion beams in microelectronics and review the literature published in this field. We discuss the design and performance of focused beam implanters and the viability of their application to semiconductor device fabrication. Applications in the areas of lithography, direct implantation and micromachining are discussed in detail. Comparisons are made between the use of focused ion beams and existing techniques for these fabrication processes with a strong emphasis placed on the relative throughputs. We present results on a novel spot size measurement technique and the effect of beam heating on resist. We also present the results of studies into implantation passivation of resist to oxygen plasma attack as basis for a dry development lithography scheme. A novel lithography system employing flood electron exposure from a photocathode which is patterned by a focused ion beam which can also be used to repair mask defects is considered. (author)

  20. A comparative study of 30MeV boron4+ and 60MeV oxygen8+ ion irradiated Si NPN BJTs

    International Nuclear Information System (INIS)

    Kumar, M. Vinay; Krishnaveni, S.; Yashoda, T.; Dinesh, C. M.; Krishnakumar, K. S.; Jayashree, B.; Ramani

    2015-01-01

    The impact of 30MeV boron 4+ and 60MeV oxygen 8+ ion irradiation on electrical characteristics of 2N3773 Si NPN Bipolar junction transistors (BJTs) is reported in the present study. The transistors were decapped and irradiated at room temperature. Gummel characteristics, DC current gain and Capacitance-voltage (C-V) characteristics were studied before and after irradiation at different fluences. DC current gain has decreased significantly in both boron and oxygen ion irradiation. Also the value of capacitance decreased 3-4 times with increase in fluence. Both 30MeV boron ion and 60MeV oxygen ion induced similar extent of degradation in electrical characteristics of the transistor

  1. Transmission property and its applications of MeV ion beams with various capillaries

    International Nuclear Information System (INIS)

    Fujita, N; Ishii, K; Ogawa, H

    2012-01-01

    In order to clarify transmission properties of an ion beam extracted with various capillaries into the air, we have measured intensity distributions for the core and the halo components of MeV ion beams using various capillaries. In addition, we have performed in-air-RBS and in-air-PIXE from the point of the application. At the conference, progress report of transmission properties of ion beams with various capillaries and its applications will be presented.

  2. Multi-ampere heavy ion injector for linear induction accelerators using periodic electrostatic focusing

    International Nuclear Information System (INIS)

    Herrmannsfeldt, W.B.

    1978-10-01

    Two configurations for ion source and drift-tube-linac combinations that could provide the energy and intensity of accelerated ions needed for the HIF applications are described. The focusing for the systems is provided by a periodic structure of rectangular electrostatic lenses. Scaling rules and extensions of the ideas will be briefly described. Example systems are described that could provide 150 μC of uranium or cesium ions at 12 MeV

  3. Large scale silver nanowires network fabricated by MeV hydrogen (H+) ion beam irradiation

    International Nuclear Information System (INIS)

    S, Honey; S, Naseem; A, Ishaq; M, Maaza; M T, Bhatti; D, Wan

    2016-01-01

    A random two-dimensional large scale nano-network of silver nanowires (Ag-NWs) is fabricated by MeV hydrogen (H + ) ion beam irradiation. Ag-NWs are irradiated under H +  ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H + ion beam-induced welding of Ag-NWs at intersecting positions. H +  ion beam induced welding is confirmed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Moreover, the structure of Ag NWs remains stable under H +  ion beam, and networks are optically transparent. Morphology also remains stable under H +  ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H +  ion beam irradiation. The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices. (paper)

  4. Confinement of 2,4 MeV deuterons by plasmoids and focalization of electron beams in plasma focus discharges

    International Nuclear Information System (INIS)

    Nardi, V.; Bostick, W.; Prior, W.; Feugeas, J.; Bortolotti, A.

    1982-01-01

    A detailed analysis has been completed on the internal structure of ions and electron beams which are efected, along the system axis, in opposite directions (0 0 and 180 0 ). An image (contact print) of plasmoids which emit MeV deuterons is formed by the deuteron emission and it is revealed by etching deuteron tracks in a target of plastic material (CR-39). Ion-imaging with different energy filters discriminates between tracks of plasmoid ions and tracks of charged products of D-D fusion reactions. Ions-imaging can also discriminate plasmoid deuterons from MeV deuterons of a directed beam. (L.C.) [pt

  5. Experimental studies of fast deuterons, impurity- and admixture-ions emitted from a plasma focus

    International Nuclear Information System (INIS)

    Mozer, A.; Sadowski, M.; Herold, H.; Schmidt, H.

    1982-01-01

    The energy and mass analysis of ions emitted from a 50-kJ, 18-kV, plasma focus machine was performed with a Thomson analyzer. Energy distribution functions of fast deuterons (E> or =350 keV) and those of impurity ions have been determined. The energy distributions of the O, N, and C impurity ions in different ionization states have similar character. They usually increase exponentially and after reaching the maximum at E/Zroughly-equal1.0 MeV they decrease exponentially to E/Zroughly-equal1.8 MeV. For deuterons at lower operating pressures (p 0 + -Ar 7+ ions of energy from 0.5 to 14 MeV are produced

  6. High-resolution Auger spectroscopy on 79 MeV Ar5+, 89 MeV Ar6+, and 136 MeV Ar7+ ions after excitation by helium

    International Nuclear Information System (INIS)

    Schneider, T.

    1988-01-01

    In this thesis the atomic structure of highly excited Ar 6+ and Ar 7+ ions was studied. For this 79 MeV Ar 5+ , 89 MeV Ar 6+ , and 136 MeV Ar 7+ ions of a heavy ion accelerator were excited by a He gas target to autoionizing states and the Auger electrons emitted in the decay were measured in highly-resolving state. The spectra were taken under an observational angle of zero degree relative to the beam axis in order to minimize the kinematical broadening of the Auger lines. (orig./HSI) [de

  7. Time resolved energy spectrum of the axial ion beam generated in plasma focus discharges

    International Nuclear Information System (INIS)

    Bostick, W.H.; Kilic, H.; Nardi, V.; Powell, C.W.

    1993-01-01

    The energy spectrum of the deuteron beam along the electrode axis (0 (degree) ) in a plasma focus discharge has been determined with a time of flight (TOF) method and with a differential filter method in the ion energy interval E = 0.3-9 MeV. The ion TOF method is applied to single-ion pulse events with an ion emission time t(E) that is only weakly dependent on the ion energy E for E > 0.3 MeV. The correlation of the ion beam intensity with the filling pressure, the neutron yield and the hard X-ray intensity is also reported. (author). 11 refs, 10 figs

  8. Depth distribution of damage in copper irradiated with MeV, Ni and He ions

    International Nuclear Information System (INIS)

    Narayan, J.; Noggle, T.S.; Oen, O.S.

    1975-01-01

    Transmission electron microscopy was used to study radiation damage as a function of depth caused by 58 and 4-MeV 58 Ni and 1-MeV He ions in copper single crystals at ambient temperature. The experimental damage density vs penetration depth distributions were compared with calculations based on the atomic collision theory of Lindhard et al. (LSS). For 58-MeV Ni ions, the calculated damage profile using the theoretical LSS value of the electronic stopping parameter (k = 0.167) agrees well with experiment. However, for 4-MeV Ni ions it is necessary to use k = 0.12 to get agreement with the experimental data. In the case of 1-MeV He, the depth location of the calculated damage peak is in good agreement with experiment when the electronic stopping determined by Chu and Powers is used whereas it is about 15 percent too close to the surface using the tables of Northcliffe and Schilling. (auth)

  9. MeV ion-beam analysis of optical data storage films

    Science.gov (United States)

    Leavitt, J. A.; Mcintyre, L. C., Jr.; Lin, Z.

    1993-01-01

    Our objectives are threefold: (1) to accurately characterize optical data storage films by MeV ion-beam analysis (IBA) for ODSC collaborators; (2) to develop new and/or improved analysis techniques; and (3) to expand the capabilities of the IBA facility itself. Using H-1(+), He-4(+), and N-15(++) ion beams in the 1.5 MeV to 10 MeV energy range from a 5.5 MV Van de Graaff accelerator, film thickness (in atoms/sq cm), stoichiometry, impurity concentration profiles, and crystalline structure were determined by Rutherford backscattering (RBS), high-energy backscattering, channeling, nuclear reaction analysis (NRA) and proton induced X-ray emission (PIXE). Most of these techniques are discussed in detail in the ODSC Annual Report (February 17, 1987), p. 74. The PIXE technique is briefly discussed in the ODSC Annual Report (March 15, 1991), p. 23.

  10. Contrast of dry and water-saturated arabidopsis seeds irradiated by MeV energy ions

    International Nuclear Information System (INIS)

    Mei Tao; Qin Huaili; Xue Jianming; Wang Yugang

    2007-01-01

    The dry and water-saturated seeds of Arabidopsis thaliana were irradiated by H + ions with 6.5 MeV in atmosphere. The ion fluence used in this experiment was in the range of 4 x 10 9 -1 x 10 14 ions/cm 2 . According to the structure of the seed and TRIM simulation, the ions with the energy of 6.5 MeV can penetrate the whole seed. The experiment shows that the fluence-response curves for the dry seeds and water-saturated seeds had distinct shoulders and reduced rapidly. The experimental results show that the water-imbibed seeds were more sensitive than the dry seeds and the reason is from free radicals reaction. A model has been constructed, and primely simulates the experiment data. (authors)

  11. Amorphization and recrystallization in MeV ion implanted InP crystals

    International Nuclear Information System (INIS)

    Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

    1988-01-01

    A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

  12. Suppression of X-radiation from 2 MeV ion electrostatic accelerator

    International Nuclear Information System (INIS)

    Ignat'ev, I.G.; Miroshnichenko, V.I.; Sirenko, A.M.; Storizhko, V.E.

    2008-01-01

    The paper presents results concerning studies of X-radiation from 2 MeV ion electrostatic accelerator 'Sokol' used for nuclear microprobe analysis. The radiation protection system of the accelerator was developed and tested. Tests of the system of the accelerator show that it reduces doses rate by two orders of magnitude

  13. Focusing experiments with light ion diodes

    International Nuclear Information System (INIS)

    Johnson, D.L.

    1978-01-01

    A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

  14. Light ion beams generation in dense plasma focus

    International Nuclear Information System (INIS)

    Yokoyama, M.; Kitagawa, Y.; Yamada, Y.; Okada, M.; Yamamoto, Y.

    1982-01-01

    The high energy deuterons and protons in a Mather type plasma focus device were measured by nuclear activation techniques. The radioactivity induced in graphite, aluminum and copper targets provided the deuteron intensity, energy spectra and angular dependence. High energy protons were measured by cellulose nitrate particle track detectors. The plasma focus device was operated at 30 kV for a stored energy of 18 kJ at 1.5 Torr D 2 (low pressure mode), and 5 Torr D 2 (high pressure mode). The yield ratio of N-13 and Al-28 showed the mean deuteron energy of 1.55 MeV under low pressure mode and of 1.44 MeV under high pressure mode. The deuteron energy spectra were measured by the stacks of 10 aluminum foils, and consisted of two components as well as the proton energy spectra measured by CN film technique. The angular spread of deuteron beam was within 30 degree under low pressure mode. Under high pressure mode, the distribution showed multi-structure, and two peaks were observed at the angle smaller than 20 degree and at 60 degree. The protons with energy more than 770 keV were directed in the angle of 10 degree. The high energy electron beam was also observed. A three-channel ruby laser holographic interferometry was used to see the spatial and temporal location of the generation of high energy ions. The ion temperature in plasma focus was estimated from D + He 3 mixture gas experiment. (Kato, T.)

  15. Energy analysis of the ion beam from plasma focus

    International Nuclear Information System (INIS)

    Kilic, H.; Nardi, V.; Prior, W.

    1984-01-01

    The authors have experimentally determined the energy spectrum of a deuteron beam in the energy interval 100 KeV ≤ E ≤ 10 MeV, with typical beam current I ≥ 1-2 A. A 5 kJ (15 kV, 49 μF) plasma focus machine is used to generate the ion beam at relatively low pressure 3-4 Torr D/sub 2/ (beam anode) and at higher pressure 6-8 Torr D/sub 2/ (high-neutron-yield mode). The spectrum is obtained from two different methods, i.e. from ion time of flight - by using time delays of Faraday cup signals with respect to hard x-ray signals - and from ion filtering, (mylar filter with different thickness from 2.5 μm up to 500 μm are used to cover the Faraday cup). The Faraday cup is located in a differentially pumed chamber (10/sup -4/ - 10/sup -5/ Torr) which is separated from the plasma focus chamber (8-3 Torr) by a 150 μm diam. pinhole (12.5 μm thick tungsten foil). The pinhole and Faraday cup are positioned on the gun axis at a distance of 15 cm and 25 cm from the end of the anode respectively

  16. Effects of high-energy (MeV) ion implantation of polyester films

    International Nuclear Information System (INIS)

    Ueno, Keiji; Matsumoto, Yasuyo; Nishimiya, Nobuyuki; Noshiro, Mitsuru; Satou, Mamoru

    1991-01-01

    The effects of high-energy ion beam irradiation on polyester (PET) films using a 3 MeV tandem-type ion beam accelerator were studied. O, Ni, Pt, and Au as ion species were irradiated at 10 14 -10 15 ions/cm 2 on 50 μm thick PET films. Physical properties and molecular structure changes were studied by the surface resistivity measurements and RBS. The surface resistivity decreases with an increase in irradiation dose. At 10 15 ions/cm 2 irradiation, the surface resistivity is 10 8 Ω/□. According to RBS and XPS analyses, some carbon and oxygen atoms in the PET are replaced by implanted ions and the -C=O bonds are destroyed easily by the ion beam. (orig.)

  17. Ion acceleration in the plasma focus

    International Nuclear Information System (INIS)

    Deutsch, R.

    1982-09-01

    Experimental informations are used to estimate the time dependence of the current density in the plasma focus and the electromagnetic field is determined from the Maxwell equations. The acceleration of the ions in these fields is studied. A detailed analysis of the acceleration in the compression phase, in the expansion phase and during the evolution of the m=O instability is made. It is shown, that the appearance of fast selffocused quasineutral electron beams, as a result of the betatron acceleration, has a decisive importance in the ion acceleration during the m=O constriction. Models for electromagnetic ion acceleration are described for each phase. A concordance with many experimental results can be observed. (orig.)

  18. Focused ion beam technology and ultimate applications

    International Nuclear Information System (INIS)

    Gierak, Jacques

    2009-01-01

    In this topical review, the potential of the focused ion beam (FIB) technology and ultimate applications are reviewed. After an introduction to the technology and to the operating principles of liquid metal ion sources (LMIS), of ion optics and instrument architectures, several applications are described and discussed. First, the application of FIB for microcircuit inspection, metrology and failure analysis is presented. Then, we introduce and illustrate some advanced patterning schemes we propose as next generation FIB processing examples. These patterning schemes are (i) local defect injection or smoothing in magnetic thin film direct patterning, (ii) functionalization of graphite substrates to guide organization of clusters, (iii) local and selective epitaxy of III–V semiconductor quantum dots and (iv) FIB patterned solid-state nanopores for biological molecules manipulation and analysis. We conclude this work by giving our vision of the future developments for FIB technology. (topical review)

  19. Energy loss and straggling of MeV ions through biological samples

    International Nuclear Information System (INIS)

    Ma Lei; Wang Yugang; Xue Jianming; Chen Qizhong; Zhang Weiming; Zhang Yanwen

    2007-01-01

    Energy loss and energy straggling of energetic ions through natural dehydrated biological samples were investigated using transmission technique. Biological samples (onion membrane, egg coat, and tomato coat) with different mass thickness were studied, together with Mylar for comparison. The energy loss and energy straggling of MeV H and He ions after penetrating the biological and Mylar samples were measured. The experimental results show that the average energy losses of MeV ions through the biological samples are consistent with SRIM predictions; however, large deviation in energy straggling is observed between the measured results and the SRIM predictions. Taking into account inhomogeneity in mass density and structure of the biological sample, an energy straggling formula is suggested, and the experimental energy straggling values are well predicted by the proposed formula

  20. Surface structural determination of UO2(111) using MeV ions

    International Nuclear Information System (INIS)

    Thompson, K.A.; Ellis, W.P.; Taylor, T.N.; Valone, S.M.; Maggiore, C.J.

    1983-01-01

    The UO 2 (111) surface was studied using MeV ions incident along the and directions. In addition, this surface was well characterized by LEED and Auger analysis. A resonance at 3.05 MeV for 4 He elastic scattering from 16 O made it possible to study the surface peaks for uranium and oxygen simultaneously. By combining previous surface studies with detailed analysis of the surface peaks and rocking curves for this compound material, an outward relaxation of 0.19 A +- 0.01 A was determined for uranium

  1. 120 MeV Ag ion induced effects in Au/HfO2/Si MOSCAPs

    Science.gov (United States)

    Manikanthababu, N.; Prajna, K.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2018-05-01

    HfO2/Si thinfilms were deposited by RF sputtering technique. 120 MeV Ag ion irradiation has been used to study the electrical properties of Au/HfO2/Si MOSCAPs. SHI (120 MeV Ag) induced annealing, defects creation and intermixing effects on the electrical properties of these systems have been studied. Here, we have observed that the high electronic excitation can cause a significant reduction of leakage currents in these MOSCAP devices. Various quantum mechanical tunneling phenomenon has been observed from the I-V characteristics.

  2. Thin film adhesion modification by MeV ions

    International Nuclear Information System (INIS)

    Sugden, S.

    1991-08-01

    The adhesion of thin films, and in particular the way in which such adhesion may be improved by irradiation, is rather poorly understood. The radiation enhanced adhesion effect has been investigated through the use of Ultra High Vacuum sample preparation, analysis and irradiation techniques, in order to gain control over surface and interface composition. In the systems studied, Au on Ta, Au on Si and Ag on Si, films deposited on atomically clean surfaces show good adhesion, and no evidence of enhancement due to irradiation is observed in the case of such clean interfaces. The results are entirely consistent with radiation enhanced adhesion being due to radiolytic effects on contaminant containing layers at the film/substrate interface. In addition, on silicon substrates the observations highlight the superiority of thermal cleaning over low energy sputtering as a route for producing a clean surface. A model of the radiation enhanced adhesion observations for dirty interface systems is developed, which takes into account the two dimensional nature of the ion energy deposition process. All the observations on such systems are broadly consistent with an activation energy for the process of approximately 5 eV. This value is sufficiently large to bring about chemical bonding rearrangement at the critical film/substrate interface. (Author)

  3. STIM with energy loss contrast: An imaging modality unique to MeV ions

    International Nuclear Information System (INIS)

    Lefevre, H.W.; Schofield, R.M.S.; Bench, G.S.; Legge, G.J.F.

    1991-01-01

    Scanning transmission ion microscopy (STIM) through measurement of energy loss of individual ions is a quantitative imaging technique with several unique capabilities. The uniqueness derives conjointly from the large penetration with small scattering of MeV ions in low-Z specimens, from the simple relationship between energy loss and projected or areal density, and from the almost 100% efficiency with which one obtains pixel data from individual ions. Since contrast is in energy loss and not in numbers of events, the statistics of energy loss straggling affects the image but the statistics of counting does not. Small scattering makes it possible to observe details within transparent specimens. High efficiency makes it possible to collect large data sets for computed tomography, stereo, or high-definition imaging with a small radiation dose. High efficiency allows one to minimize aberrations by use of small apertures, to achieve good precision in the determination of areal density, or even to image live biological specimens in air since only one or a few ions per pixel are required. This paper includes a bibliography on STIM with MeV ions, it discusses the accuracy that one can achieve in the areal density coloring of a pixel with data from one or a few ions, and it supplements that review with recent examples from the Melbourne and the Eugene microprobes. (orig.)

  4. Ion shaking in the 200 MeV XLS-ring

    International Nuclear Information System (INIS)

    Bozoki, E.; Kramer, S.L.

    1992-01-01

    It has been shown that ions, trapped inside the beam's potential, can be removed by the clearing electrodes when the amplitude of the ion oscillation is increased by vertically shaking the ions. We will report on a similar experiment in the 200 Mev XLS ring. The design of the ion clearing system for the ring and the first results obtained, were already reported. In the present series of experiments, RF voltage was applied on a pair of vertical strip-lines. The frequency was scanned in the range of the ion (from H 2 to CO 2 ) bounce frequencies in the ring (1--10 MHz). The response of the beam size, vertical betatron tune and lifetime was studied

  5. Accelerator based synthesis of hydroxyapatite by MeV ion implantation

    International Nuclear Information System (INIS)

    Rautray, Tapash R.; Narayanan, R.; Kwon, Tae-Yub; Kim, Kyo-Han

    2010-01-01

    Accelerator based MeV ion implantation of Ca 2+ and P 2+ into the titanium substrate to form hydroxyapatite (HA) has been carried out. Calcium hydroxide was formed after heating the calcium implanted titanium in air at 80 o C for 3 h. Upon subsequent annealing for 5 min at 600 o C HA was formed on the surface. Penetration depth of the HA layer in this method is much higher as compared to keV ion implantation. By elemental analysis, Ca/P ratio of the HA was found to be 1.76 which is higher than the ideal 1.67. This higher Ca/P ratio is attributed to the higher penetration depth of the MeV technique used.

  6. Effects produced in GaAs by MeV ion bombardment

    International Nuclear Information System (INIS)

    Wie, C.R.

    1985-01-01

    The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

  7. Focused ion beam milling of carbon fibres

    International Nuclear Information System (INIS)

    Huson, Mickey G.; Church, Jeffrey S.; Hillbrick, Linda K.; Woodhead, Andrea L.; Sridhar, Manoj; Van De Meene, Allison M.L.

    2015-01-01

    A focused ion beam has been used to mill both individual carbon fibres as well as fibres in an epoxy composite, with a view to preparing flat surfaces for nano-indentation. The milled surfaces have been assessed for damage using scanning probe microscopy nano-indentation and Raman micro-probe analysis, revealing that FIB milling damages the carbon fibre surface and covers surrounding areas with debris of disordered carbon. The debris is detected as far as 100 μm from the milling site. The energy of milling as well as the orientation of the beam was varied and shown to have an effect when assessed by Raman spectroscopy. - Highlights: • Focused ion beam (FIB) milling was used to mill flat surfaces on carbon fibres. • Raman spectroscopy showed amorphous carbon was generated during FIB milling. • The amorphous debris is detected as far as 100 μm from the milling site. • This surface degradation was confirmed by nano-indentation experiments.

  8. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Vittone, E., E-mail: ettore.vittone@unito.it [Department of Physics, NIS Research Centre and CNISM, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Pastuovic, Z. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Breese, M.B.H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Garcia Lopez, J. [Centro Nacional de Aceleradores (CNA), Sevilla University, J. Andalucia, CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jaksic, M. [Department for Experimental Physics, Ruder Boškovic Institute (RBI), P.O. Box 180, 10002 Zagreb (Croatia); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland); Siegele, R. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Simon, A. [International Atomic Energy Agency (IAEA), Vienna International Centre, P.O. Box 100, 1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary); Vizkelethy, G. [Sandia National Laboratories (SNL), PO Box 5800, Albuquerque, NM (United States)

    2016-04-01

    Highlights: • We study the electronic degradation of semiconductors induced by ion irradiation. • The experimental protocol is based on MeV ion microbeam irradiation. • The radiation induced damage is measured by IBIC. • The general model fits the experimental data in the low level damage regime. • Key parameters relevant to the intrinsic radiation hardness are extracted. - Abstract: This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

  9. MeV ion induced damage production and accumulation in silicon

    International Nuclear Information System (INIS)

    Suzuki, Motoyuki; Okazaki, Makoto; Shin, Kazuo; Takagi, Ikuji; Yoshida, Koji

    1993-01-01

    Measurement and analysis were made for radiation damages in silicon induced by MeV ions. A single crystal silicon was bombarded by 800 keV O + and 700 keV Si + with the dose from 2x10 15 up to 8x10 15 cm -2 . And defects induced by the ion bombardments were observed by the channeling method. Some new modifications were made to the analysis of the channeling RBS spectrum so that the accuracy of the unfolded defect distribution may be improved. A new model of point-defect clustering and amorphous formation was proposed, which well reproduced the observed defect distribution in silicon. (author)

  10. 130 MeV Au ion irradiation induced dewetting on In2Te3 thin film

    International Nuclear Information System (INIS)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B.; Sathyamoorthy, R.; Prakash, Jai; Asokan, K.; Kanjilal, D.

    2012-01-01

    Highlights: ► In 2 Te 3 phase formed from In/Te bilayer by 130 MeV Au ion irradiation. ► Lower fluence results mixed phases with initial state of dewetting. ► At higher fluence, In 2 Te 3 phase with complete dewetting pattern is formed. ► Thermal spike model is used to explain the inter face mixing phenomena. ► SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 × 10 13 ions/cm 2 . At the higher fluence of 3 × 10 13 ions/cm 2 , dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  11. GXRD study of 100 MeV Fe9+ ion irradiated indium phosphide

    International Nuclear Information System (INIS)

    Dubey, R.L.; Dubey, S.K.; Kachhap, N.K.; Kanjilal, D.

    2014-01-01

    Swift heavy ions with MeV to GeV kinetic energy offer unique possibilities of modifying material properties. Each projectile passing through the target material causes loss of its energy by ion-electrons and ion-atoms interaction with the target material. The consequence of formal one is to change in surface properties and latter to produces damage deep in the target material near the projected range of projectile. In the present work, indium phosphide samples were irradiated at 100 MeV 56 Fe 9+ ions with different fluences varying from 1x10 12 to 1x10 14 ions cm -2 using the 15UD Pelletron facilities at Inter University Accelerator Centre (IUAC), New Delhi. Grazing angle X-ray diffraction technique was used to investigate the structural properties of irradiated indium phosphide at different depths. The GXRD spectra of non-irradiated and irradiated samples were recorded at different grazing angle i.e 1°, 2°, 3°, 4° and 5° to get the structural information over the projected range. The detailed result will be presented and discussed in the conference. (author)

  12. Ultrafast laser driven micro-lens to focus and energy select MeV protons

    International Nuclear Information System (INIS)

    Toncian, Toma

    2008-05-01

    A technique for simultaneous focusing and energy selection of high-current, MeV proton beams using radial, transient electric fields (10 7 -10 10 V/m) triggered on the inner wall of a hollow micro-cylinder by an intense, sub-picosecond laser-pulse is presented. Due to the transient nature of the radial focusing field, the proposed method allows selection of a desired range out of the spectrum of the poly-energetic proton beam. This technique addresses current drawbacks of laser-accelerated proton beams, i.e. their broad spectrum and divergence at the source. This thesis presents both experimental and computational studies that led to the understanding of the physical processes driving the micro-lens. After an one side irradiation of a hollow metallic cylinder a radial electric field develops inside the cylinder. Hot electrons generated by the interaction between laser pulse and cylinder wall spread inside the cylinder generating a plasma at the wall. This plasma expands into vacuum and sustains an electric field that acts as a collecting lens on a proton beam propagating axially through the cylinder. Both focusing and the reduction of the intrinsic beam divergence from 20 deg to.3 deg for a narrow spectral range was demonstrated. By sub-aperturing the beam a narrow spectral range (δε/ε < 3%) was selected from the poly-energetic beam. The micro-lens properties are tunable allowing for optimization towards applications. Optical probing techniques and proton imaging were employed to study the spacial and temporal evolution of the field and revealed a complex physical scenario of the rise and decay of the radial electric field. Each aspect studied experimentally is interpreted using 2D PIC and ray tracing simulations. A very good agreement between the experimental and computational data is found. The PIC simulations are used to upscale the demonstrated micro-lens capabilities to the focusing of a 270 MeV proton beam, an energy relevant for medical applications such

  13. Ultrafast laser driven micro-lens to focus and energy select MeV protons

    Energy Technology Data Exchange (ETDEWEB)

    Toncian, Toma

    2008-05-15

    A technique for simultaneous focusing and energy selection of high-current, MeV proton beams using radial, transient electric fields (10{sup 7}-10{sup 10} V/m) triggered on the inner wall of a hollow micro-cylinder by an intense, sub-picosecond laser-pulse is presented. Due to the transient nature of the radial focusing field, the proposed method allows selection of a desired range out of the spectrum of the poly-energetic proton beam. This technique addresses current drawbacks of laser-accelerated proton beams, i.e. their broad spectrum and divergence at the source. This thesis presents both experimental and computational studies that led to the understanding of the physical processes driving the micro-lens. After an one side irradiation of a hollow metallic cylinder a radial electric field develops inside the cylinder. Hot electrons generated by the interaction between laser pulse and cylinder wall spread inside the cylinder generating a plasma at the wall. This plasma expands into vacuum and sustains an electric field that acts as a collecting lens on a proton beam propagating axially through the cylinder. Both focusing and the reduction of the intrinsic beam divergence from 20 deg to.3 deg for a narrow spectral range was demonstrated. By sub-aperturing the beam a narrow spectral range ({delta}{epsilon}/{epsilon} < 3%) was selected from the poly-energetic beam. The micro-lens properties are tunable allowing for optimization towards applications. Optical probing techniques and proton imaging were employed to study the spacial and temporal evolution of the field and revealed a complex physical scenario of the rise and decay of the radial electric field. Each aspect studied experimentally is interpreted using 2D PIC and ray tracing simulations. A very good agreement between the experimental and computational data is found. The PIC simulations are used to upscale the demonstrated micro-lens capabilities to the focusing of a 270 MeV proton beam, an energy relevant

  14. The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

    International Nuclear Information System (INIS)

    Alton, G.D.

    1987-01-01

    This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle

  15. Imaging of single cells and tissue using MeV ions

    International Nuclear Information System (INIS)

    Watt, F.; Bettiol, A.A.; Kan, J.A. van; Ynsa, M.D.; Ren Minqin; Rajendran, R.; Cui Huifang; Sheu, F.-S.; Jenner, A.M.

    2009-01-01

    With the attainment of sub-100 nm high energy (MeV) ion beams, comes the opportunity to image cells and tissue at nano-dimensions. The advantage of MeV ion imaging is that the ions will penetrate whole cells, or relatively thick tissue sections, without any significant loss of resolution. In this paper, we demonstrate that whole cells (cultured N2A neuroblastoma cells ATCC) and tissue sections (rabbit pancreas tissue) can be imaged at sub-100 nm resolutions using scanning transmission ion microscopy (STIM), and that sub-cellular structural details can be identified. In addition to STIM imaging we have also demonstrated for the first time, that sub-cellular proton induced fluorescence imaging (on cultured N2A neuroblastoma cells ATCC) can also be carried out at resolutions of 200 nm, compared with 300-400 nm resolutions achieved by conventional optical fluorescence imaging. The combination of both techniques offers a potentially powerful tool in the quest for elucidating cell function, particularly when it should be possible in the near future to image down to sub-50 nm.

  16. Use of radial self-field geometry for intense pulsed ion beam generation above 6 MeV on Hermes III.

    Energy Technology Data Exchange (ETDEWEB)

    Renk, Timothy Jerome [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Harper-Slaboszewicz, Victor Jozef [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Ginn, William Craig [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Mikkelson, Kenneth A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Schall, Michael [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Cooper, Gary Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2012-12-01

    We investigate the generation and propagation of intense pulsed ion beams at the 6 MeV level and above using the Hermes III facility at Sandia National Laboratories. While high-power ion beams have previously been produced using Hermes III, we have conducted systematic studies of several ion diode geometries for the purpose of maximizing focused ion energy for a number of applications. A self-field axial-gap diode of the pinch reflex type and operated in positive polarity yielded beam power below predicted levels. This is ascribed both to power flow losses of unknown origin upstream of the diode load in Hermes positive polarity operation, and to anomalies in beam focusing in this configuration. A change to a radial self-field geometry and negative polarity operation resulted in greatly increased beam voltage (> 6 MeV) and estimated ion current. A comprehensive diagnostic set was developed to characterize beam performance, including both time-dependent and time-integrated measurements of local and total beam power. A substantial high-energy ion population was identified propagating in reverse direction, i.e. from the back side of the anode in the electron beam dump. While significant progress was made in increasing beam power, further improvements in assessing the beam focusing envelope will be required before ultimate ion generation efficiency with this geometry can be completely determined.

  17. From field evaporation to focused ion beams

    International Nuclear Information System (INIS)

    Forbes, R.G.

    2004-01-01

    Full text: This paper report various items of recent progress in the theory of field evaporation and the theory of the liquid-metal ion source. The research has, in part, been driven by a desire to find out how to reduce the beam-spot size in a focused ion beam machine, which is developing as a significant tool of nanotechnology. A major factor in determining beam spot size seems to be the behavior of the liquid-metal ion source (LMIS), and one route might be to reduce the minimum emission current of a LMIS, if this is possible. Theories of LMIS minimum emission current have been re-examined. Some progress has been made, but development of more accurate theory has been constrained by several factors, include the long-known limitations of the present theory of field evaporation (FEV). This, in turn, has stimulated a wider re-examination of FEV theory. As part of some general theoretical remarks, the following items of recent progress will be covered. Various results concerning the prediction of the field F e at which the activation energy Q for field evaporation is zero, including calculations in which vacuum electrostatic energy changes are taken into account, and another look at the views of Kingham and Tsong concerning escape charge-state. Some years ago, the following approximate formula was derived for the dependence of FEV activation energy on field F: Q=B(F e /F - 1) 2 . It has recently been possible to show that the parameter B can be estimated as B= βYΩ/8, where Y is Young's modulus, Ω is the atomic volume, and β is a correction factor of order. In the framework of the charge-draining mechanism, another look at how the activation-energy hump can be modelled, in order to predict/explain the conditions under which FEV becomes dominated by ion tunnelling rather than field evaporation. A review of the changes in LMIS theory that result from applying the equation of continuity to the metal/vacuum interface, including modifications to the theory of minimum

  18. MeV single-ion beam irradiation of mammalian cells using the Surrey vertical nanobeam, compared with broad proton beam and X-ray irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Jeynes, J.C.G.; Merchant, M.J.; Kirkby, K.; Kirkby, N. [Surrey Ion Beam Center, Faculty of Engineering and Physical Science, University of Surrey, Guildford Surrey, GU2 7XH (United Kingdom); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Highlights: •Recently completed nanobeam at the Surrey Ion Beam Centre was used. •3.8-MeV single and broad proton beams irradiated Chinese hamster cells. •Cell survival curves were measured and compared with 300-kV X-ray irradiation. •Single ion irradiation had a lower survival part at ultra-low dose. •It implies hypersensitivity, bystander effect and cell cycle phase of cell death. -- Abstract: As a part of a systematic study on mechanisms involved in physical cancer therapies, this work investigated response of mammalian cells to ultra-low-dose ion beam irradiation. The ion beam irradiation was performed using the recently completed nanobeam facility at the Surrey Ion Beam Centre. A scanning focused vertical ion nano-beam was applied to irradiate Chinese hamster V79 cells. The V79 cells were irradiated in two different beam modes, namely, focused single ion beam and defocused scanning broad ion beam of 3.8-MeV protons. The single ion beam was capable of irradiating a single cell with a precisely controlled number of the ions to extremely low doses. After irradiation and cell incubation, the number of surviving colonies as a function of the number of the irradiating ions was measured for the cell survival fraction curve. A lower survival for the single ion beam irradiation than that of the broad beam case implied the hypersensitivity and bystander effect. The ion-beam-induced cell survival curves were compared with that from 300-kV X-ray irradiation. Theoretical studies indicated that the cell death in single ion irradiation mainly occurred in the cell cycle phases of cell division and intervals between the cell division and the DNA replication. The success in the experiment demonstrated the Surrey vertical nanobeam successfully completed.

  19. MeV ion beam interaction with polymer films containing cross-linking agents

    International Nuclear Information System (INIS)

    Evelyn, A. L.

    1999-01-01

    Polymer films containing cross linking enhancers were irradiated with MeV alpha particles to determine the effects of MeV ion beam interaction on these materials. The contributed effects from the electronic and nuclear stopping powers were separated by irradiating stacked thin films of polyvinyl chloride (PVC), polystyrene (PS) and polyethersulfone (PES). This layered system allowed most of the effects of the electronic energy deposited to be experienced by the first layers and the last layers to receive most of the effects of the nuclear stopping power. RGA, Raman microprobe analysis, RBS and FTIR measured changes in the chemical structures of the irradiated films. The characterization resolved the effects of the stopping powers on the PVC, PS and PES and the results were compared with those from previously studied polymers that did not contain any cross linking agents

  20. Energy loss of carbon transmitted 1-MeV H2+ ions

    International Nuclear Information System (INIS)

    Fritz, M.; Kimura, K.; Susuki, Y.; Mannami, M.

    1994-01-01

    Energy losses of 1-MeV H 2 + ions passing through carbon foils of 2-8 μg/cm 2 thickness have been measured and show besides the linear increase with target thickness a 0.4 keV offset. The stopping power derived from the observed energy losses is 1.15 times as large as the sum of the stopping powers for two single H + of the same velocity. Calculations of the stopping powers for H 2 + ions and diprotons, using first Born approximation, indicate that the H 2 + ions lose the binding electron upon entrance into the foil, traverse the target as diprotons and recapture target electrons at the exit surface, a scenario also supported by the 0.4 keV offset at zero thickness. (author)

  1. New source of MeV negative ion and neutral atom beams

    Energy Technology Data Exchange (ETDEWEB)

    Ter-Avetisyan, S., E-mail: sargis@gist.ac.kr [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 500-712 (Korea, Republic of); Department of Physics and Photon Science, GIST, Gwangju 500-712 (Korea, Republic of); Braenzel, J.; Schnürer, M. [Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Berlin 12489 (Germany); Prasad, R. [Institute for Laser and Plasma Physics, Heinrich Heine University, Duesseldorf 40225 (Germany); Borghesi, M. [School of Mathematics and Physics, The Queen’s University of Belfast, Belfast BT7-1NN (United Kingdom); Jequier, S.; Tikhonchuk, V. [Centre Lasers Intenses et Applications, CEA, CNRS, University of Bordeaux, 33405 Talence (France)

    2016-02-15

    The scenario of “electron-capture and -loss” was recently proposed for the formation of negative ion and neutral atom beams with MeV kinetic energies. However, it does not explain why the formation of negative ions in a liquid spray is much more efficient than with an isolated atom. The role of atomic excited states in the charge-exchange processes is considered, and it is shown that it cannot account for the observed phenomena. The processes are more complex than the single electron-capture and -loss approach. It is suggested that the shell effects in the electronic structure of the projectile ion and/or target atoms may influence the capture/loss probabilities.

  2. New source of MeV negative ion and neutral atom beams

    International Nuclear Information System (INIS)

    Ter-Avetisyan, S.; Braenzel, J.; Schnürer, M.; Prasad, R.; Borghesi, M.; Jequier, S.; Tikhonchuk, V.

    2016-01-01

    The scenario of “electron-capture and -loss” was recently proposed for the formation of negative ion and neutral atom beams with MeV kinetic energies. However, it does not explain why the formation of negative ions in a liquid spray is much more efficient than with an isolated atom. The role of atomic excited states in the charge-exchange processes is considered, and it is shown that it cannot account for the observed phenomena. The processes are more complex than the single electron-capture and -loss approach. It is suggested that the shell effects in the electronic structure of the projectile ion and/or target atoms may influence the capture/loss probabilities

  3. Measurement and modelling of the radiation damage of silicon by MeV Ag ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Eder, J.; Stritzker, B.

    1999-01-01

    Depth profiles of the radiation damage produced by 4 MeV Ag ions in Si(111) at temperatures of 210--450 K are studied by optical reflectivity depth profiling and TEM for doses between 10 12 and 10 15 Ag/cm 2 . For high implantation temperatures, the depth of maximum damage is shown to be dose dependent. Point defect diffusion is shown to result in long tails of defect depth profiles. High-temperature amorphization is observed to proceed via the formation and bridge-like coalescence of isolated amorphous volumina. The damage at the depth of the maximum in the nuclear stopping power is described as a function of dose and temperature by the Hecking model. The model parameters and a comparison with those obtained for lighter ions reflect the particular properties of heavy ion collision cascades

  4. Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

    International Nuclear Information System (INIS)

    Solanki, Anjana; Choudhary, Surbhi; Satsangi, Vibha R.; Shrivastav, Rohit; Dass, Sahab

    2013-01-01

    Highlights: ► Effect of 100 MeV Si 8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO 3 thin films was studied. ► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique. ► Optimal irradiation fluence for best PEC response was 5 × 10 11 ion cm −2 . ► Maximum photocurrent density was observed to be 0.7 mA cm −2 at 0.4 V/SCE. ► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity. -- Abstract: Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO 3 ) thin films were investigated by irradiating films with 100 MeV Si 8+ ions at different ion fluences in the range of 1 × 10 11 –2 × 10 13 ions cm −2 . BaTiO 3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm −2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO 3 film irradiated at 5 × 10 11 ions cm −2 , which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity

  5. Study of the thermal oxidation of titanium and zirconium under argon ion irradiation in the low MeV range (E = 15 MeV)

    International Nuclear Information System (INIS)

    Do, N.-L.

    2012-01-01

    We have shown that argon ion irradiation between 1 and 15 MeV produces damage on both titanium and zirconium surfaces, taking the form of accelerated oxidation and/or craterization effects, varying as a function of the projectile energy and the annealing atmosphere (temperature and pressure) simulating the environmental conditions of the fuel/cladding interface of PWR fuel rods. Using AFM, we have shown that the titanium and zirconium surface is attacked under light argon ion bombardment at high temperature (up to 500 C) in weakly oxidizing medium (under rarefied dry air pressure ranging from 5,7 10 -5 Pa to 5 10 -3 Pa) for a fixed fluence of about 5 10 14 ions.cm -2 . We observed the formation of nano-metric craters over the whole titanium surface irradiated between 2 and 9 MeV and the whole zirconium surface irradiated at 4 MeV, the characteristics of which vary depending on the temperature and the pressure. In the case of the Ar/Ti couple, the superficial damage efficiency increases when the projectile energy decreases from 9 to 2 MeV. Moreover, whereas the titanium surface seems to be transparent under the 15-MeV ion beam, the zirconium surface exhibits numerous micrometric craters surrounded by a wide halo. The crater characteristics (size and superficial density) differ significantly from that observed both in the low energy range (keV) where the energy losses are controlled by ballistic collisions (Sn) and in the high energy range (MeV - GeV) where the energy losses are controlled by electronic excitations (Se), which was not completely unexpected in this intermediate energy range for which combined Sn - Se stopping power effects are possibly foreseen. Using XPS associated to ionic sputtering, we have shown that there is an irradiation effect on thermal oxidation of titanium, enhanced under the argon ion beam between 2 and 9 MeV, and that there is also an energy effect on the oxide thickness and stoichiometry. The study conducted using Spectroscopic

  6. Determining the stereochemical structures of molecular ions by ''Coulomb-explosion'' techniques with fast (MeV) molecular ion beams

    International Nuclear Information System (INIS)

    Gemmell, D.S.

    1980-01-01

    Recent studies on the dissociation of fast (MeV) molecular ion beams in thin foils suggest a novel alternative approach to the determination of molecular ion structures. In this article we review some recent high-resolution studies on the interactions of fast molecular ion beams with solid and gaseous targets and indicate how such studies may be applied to the problem of determining molecular ion structures. The main features of the Coulomb explosion of fast-moving molecular ion projectiles and the manner in which Coulomb-explosion techniques may be applied to the problem (difficult to attack by more conventional means) of determining the stereochemical structures of molecular ions has been described in this paper. Examples have been given of early experiments designed to elicit structure information. The techniques are still in their infancy, and it is to be expected that as both the technology and the analysis are refined, the method will make valuable contributions to the determination of molecular ion structures

  7. Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

    1993-09-01

    The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

  8. Anti-biofilm efficacy of 100 MeV gold ion irradiated polycarbonate against Salmonella typhi

    Science.gov (United States)

    Joshi, R. P.; Hareesh, K.; Bankar, A.; Sanjeev, G.; Asokan, K.; Kanjilal, D.; Dahiwale, S. S.; Bhoraskar, V. N.; Dhole, S. D.

    2017-12-01

    Polycarbonate (PC) films were irradiated by 100 MeV gold (Au7+) ions and characterized to study changes in its optical, chemical, surface morphology and thermal properties. UV-Visible spectroscopic results revealed the decrease in the optical band gap of PC after ion irradiation due to chain scission mainly at the carbonyl group which is corroborated by Fourier Transform Infrared spectroscopic results. X-ray diffractogram study showed decrease in crystallinity of PC film after irradiation. Scanning electron microscopic results showed the micropores formation in PC which results in surface roughening. Differential scanning calorimetric results revealed decrease in glass transition temperature indicating the decrease in molecular weight of PC corroborated by rheometric studies. PC films irradiated by 100 MeV Au7+ ions showed increased anti-biofilm activity against the human pathogen, Salmonella typhi (S. typhi). Morphology of S. typhi was changed due to stress of Au7+ irradiated PC. Cells length was increased with increasing fluences. The average cell length, cell volume and surface area was increased significantly (PBiofilm formation was inhibited ≈ 20% at lower fluence and 96% at higher fluence, which observed to be enhanced anti-biofilm activity in Au7+ irradiated PC.

  9. Solenoidal Fields for Ion Beam Transport and Focusing

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Edward P.; Leitner, Matthaeus

    2007-11-01

    In this report we calculate time-independent fields of solenoidal magnets that are suitable for ion beam transport and focusing. There are many excellent Electricity and Magnetism textbooks that present the formalism for magnetic field calculations and apply it to simple geometries [1-1], but they do not include enough relevant detail to be used for designing a charged particle transport system. This requires accurate estimates of fringe field aberrations, misaligned and tilted fields, peak fields in wire coils and iron, external fields, and more. Specialized books on magnet design, technology, and numerical computations [1-2] provide such information, and some of that is presented here. The AIP Conference Proceedings of the US Particle Accelerator Schools [1-3] contain extensive discussions of design and technology of magnets for ion beams - except for solenoids. This lack may be due to the fact that solenoids have been used primarily to transport and focus particles of relatively low momenta, e.g. electrons of less than 50 MeV and protons or H- of less than 1.0 MeV, although this situation may be changing with the commercial availability of superconducting solenoids with up to 20T bore field [1-4]. Internal reports from federal laboratories and industry treat solenoid design in detail for specific applications. The present report is intended to be a resource for the design of ion beam drivers for Inertial Fusion Energy [1-5] and Warm Dense Matter experiments [1-6], although it should also be useful for a broader range of applications. The field produced by specified currents and material magnetization can always be evaluated by solving Maxwell's equations numerically, but it is also desirable to have reasonably accurate, simple formulas for conceptual system design and fast-running beam dynamics codes, as well as for general understanding. Most of this report is devoted to such formulas, but an introduction to the Tosca{copyright} code [1-7] and some

  10. Solenoidal Fields for Ion Beam Transport and Focusing

    International Nuclear Information System (INIS)

    Lee, Edward P.; Leitner, Matthaeus

    2007-01-01

    In this report we calculate time-independent fields of solenoidal magnets that are suitable for ion beam transport and focusing. There are many excellent Electricity and Magnetism textbooks that present the formalism for magnetic field calculations and apply it to simple geometries (1-1), but they do not include enough relevant detail to be used for designing a charged particle transport system. This requires accurate estimates of fringe field aberrations, misaligned and tilted fields, peak fields in wire coils and iron, external fields, and more. Specialized books on magnet design, technology, and numerical computations (1-2) provide such information, and some of that is presented here. The AIP Conference Proceedings of the US Particle Accelerator Schools (1-3) contain extensive discussions of design and technology of magnets for ion beams - except for solenoids. This lack may be due to the fact that solenoids have been used primarily to transport and focus particles of relatively low momenta, e.g. electrons of less than 50 MeV and protons or H- of less than 1.0 MeV, although this situation may be changing with the commercial availability of superconducting solenoids with up to 20T bore field (1-4). Internal reports from federal laboratories and industry treat solenoid design in detail for specific applications. The present report is intended to be a resource for the design of ion beam drivers for Inertial Fusion Energy (1-5) and Warm Dense Matter experiments (1-6), although it should also be useful for a broader range of applications. The field produced by specified currents and material magnetization can always be evaluated by solving Maxwell's equations numerically, but it is also desirable to have reasonably accurate, simple formulas for conceptual system design and fast-running beam dynamics codes, as well as for general understanding. Most of this report is devoted to such formulas, but an introduction to the Tosca(copyright) code (1-7) and some numerical

  11. The real potential continuous ambiguity for 90 MeV Li ions

    International Nuclear Information System (INIS)

    Cook, J.; Barnwell, J.M.; Clarke, N.M.; Griffiths, R.J.

    1980-01-01

    The features of discrete and continuous ambiguities in the real phenomenological optical potential are clarified. The continuous ambiguity in the real potential for the scattering of 90 MeV 6 Li and 7 Li ions from 27 Al is investigated. For 6 Li the ambiguity is of Igo (Phys. Rev. Lett.; 1: 72 (1958) and Phys. Rev.; 115: 1665 (1959)) type but for 7 Li it is of Vrsup(n) = constant type. The implications of this are that 7 Li is less strongly absorbed than 6 Li. (author)

  12. Backscattering/transmission of 2 MeV He{sup ++} ions quantitative correlation study

    Energy Technology Data Exchange (ETDEWEB)

    Berec, V., E-mail: bervesn@gmail.com [Institute of Nuclear Sciences Vinca, University of Belgrade, P.O. Box 522, 11001 Belgrade (Serbia); Germogli, G.; Mazzolari, A.; Guidi, V. [INFN Sezione di Ferrara and Dipartimento di Fisica e Scienze della Terra, Via Saragat 1, 44100 Ferrara (Italy); De Salvador, D. [Dipartimento di Fisica, Università di Padova, Via Marzolo n.8, 35131 Padova (Italy); INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro, PD (Italy); Bacci, L. [INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro, PD (Italy)

    2015-07-15

    In this work we report on detailed findings of planar channeling oscillations of 2 MeV He{sup ++} particles in (1 1 0) silicon crystal. The exact correlation and coherence mechanism between confined particles oscillating trajectories are analyzed theoretically and experimentally in backscattering/transmission geometry. Regular patterns of channeled He{sup ++} ion planar oscillations are shown to be dominated by the crystal harmonic-oscillator potential and multiple scattering effect. For the first time it was shown that under the planar channeling conditions trajectories of positively charged particles exhibit observable correlation dynamics, including the interference effect. Quantitative estimation of channeling efficiency is performed using path integral method.

  13. Diffusion of alpha-like MeV ions in TFTR

    International Nuclear Information System (INIS)

    Boivin, R.L.; Zweben, S.J.; Chang, C.S.; Hammett, G.; Mynick, H.E.; White, R.B.

    1991-01-01

    Single particle confinement of alpha particles is of crucial importance in reactor-grade tokamaks like BPX and ITER. Besides the well-known process of first-orbit losses, mechanisms that could lead to significant loss of alpha particles are turbulence-induced diffusion and toroidal field ripple stochastic diffusion. These two mechanisms have been separately studied in TFTR using two different detectors (one at the bottom of the machine and the other near the outer midplane) which can detect escaping charged fusion products, namely the 1 MeV triton and the 3 MeV proton in D-D plasmas (and also the 3.5 MeV alpha in D-T). The main difficulty in this type of experiment lies in the necessity of distinguishing the diffusion process from the always-present first-orbit loss-process. In this paper, we show how these two processes can be distinguished using the pitch-angle discrimination of the detectors. The pitch-angle is defined here as the angle of the particle trajectory with respect to the toroidal direction and so is a measure of the ion magnetic moment, μ. Results obtained at the midplane would be the first reported evidence of TF ripple diffusion in a tokamak. (author) 3 refs., 2 figs

  14. Ion Beam Materials Analysis and Modifications at keV to MeV Energies at the University of North Texas

    Science.gov (United States)

    Rout, Bibhudutta; Dhoubhadel, Mangal S.; Poudel, Prakash R.; Kummari, Venkata C.; Lakshantha, Wickramaarachchige J.; Manuel, Jack E.; Bohara, Gyanendra; Szilasi, Szabolcs Z.; Glass, Gary A.; McDaniel, Floyd D.

    2014-02-01

    The University of North Texas (UNT) Ion Beam Modification and Analysis Laboratory (IBMAL) has four particle accelerators including a National Electrostatics Corporation (NEC) 9SDH-2 3 MV tandem Pelletron, a NEC 9SH 3 MV single-ended Pelletron, and a 200 kV Cockcroft-Walton. A fourth HVEC AK 2.5 MV Van de Graaff accelerator is presently being refurbished as an educational training facility. These accelerators can produce and accelerate almost any ion in the periodic table at energies from a few keV to tens of MeV. They are used to modify materials by ion implantation and to analyze materials by numerous atomic and nuclear physics techniques. The NEC 9SH accelerator was recently installed in the IBMAL and subsequently upgraded with the addition of a capacitive-liner and terminal potential stabilization system to reduce ion energy spread and therefore improve spatial resolution of the probing ion beam to hundreds of nanometers. Research involves materials modification and synthesis by ion implantation for photonic, electronic, and magnetic applications, micro-fabrication by high energy (MeV) ion beam lithography, microanalysis of biomedical and semiconductor materials, development of highenergy ion nanoprobe focusing systems, and educational and outreach activities. An overview of the IBMAL facilities and some of the current research projects are discussed.

  15. Design study of prototype accelerator and MeV test facility for demonstration of 1 MeV, 1 A negative ion beam production

    International Nuclear Information System (INIS)

    Inoue, Takashi; Hanada, Masaya; Miyamoto, Kenji; Ohara, Yoshihiro; Okumura, Yoshikazu; Watanabe, Kazuhiro; Maeno, Shuichi.

    1994-08-01

    In fusion reactors such as ITER, a neutral beam injector of MeV class beam energy and several tens MW class power is required as one of candidates of heating and current drive systems. However, the beam energy of existing high power accelerators are one order of magnitude lower than the required value. In order to realize a neutral beam injector for the fusion reactor, 'Proof-of-Principle' of such high energy acceleration is a critical issue at a reactor relevant beam current and pulse length. An accelerator and an accelerator facility which are necessary to demonstrate the Proof-of-Principle acceleration of negative ion beams up to 1 MeV, have been designed in the present study. The accelerator is composed of a cesium-volume type ion source and a multi-stage electrostatic acceleration system [Prototype Accelerator]. A negative hydrogen ion beam with the current of about one ampere (1 A) can be accelerated up to 1 MeV at a low operating pressure. Two types of acceleration system, a multi-multi type and a multi-single type, have been studied. The test facility has sufficient capability for the test of the Prototype Accelerator [MeV Test Facility]. The dc high voltage generator for negative ion acceleration is a Cockcroft-Walton type and capable of delivering 1 A at 1 MV (=1 MW) for 60 s. High voltage components including Prototype Accelerator are installed in a SF 6 vessel pressurized at 6 kg/cm 2 to overcome high voltage gradients. The vessel and the beamline are installed in a X-ray shield. (author)

  16. Development of a focused ion beam micromachining system

    Energy Technology Data Exchange (ETDEWEB)

    Pellerin, J.G.; Griffis, D.; Russell, P.E.

    1988-12-01

    Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

  17. 100 MeV silver ions induced defects and modifications in silica glass

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, Vijay S.; Deore, Avinash V.; Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411007 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110067 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

    2014-07-15

    Highlights: •Study of silver ion induced defects and modifications in silica glass. •Variation in oxygen deficiency centres (ODA-II) and nonbridging oxygen hole centres (NBOHC). •Study of structural damage in terms of Urbach energy. -- Abstract: A few silica glass samples having 1 cm{sup 2} area and 0.1 cm thickness were irradiated with 100 MeV energy Ag{sup 7+} ions for the fluences ranging from 1 × 10{sup 12} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. The optical properties and the corresponding induced defects were characterised by the techniques such as UV–Visible, Photoluminescence (PL), Fourier transform infrared (FTIR), and Electron spin resonance (ESR) spectroscopy. The UV–Visible absorption spectra show two peaks, one at 5 eV and another weak peak at 5.8 eV. A peak observed at 5.0 eV corresponds to B{sub 2} band (oxygen deficiency in SiO{sub 2} network) and the peak at 5.8 eV is due to the paramagnetic defects like E′ centre. The intensities of these peaks found to be increased with increase in ion fluence. It attributes to the increase in the concentration of E′ centres and B{sub 2} band respectively. In addition, the optical band gap energy, Urbach energy and the defects concentration have been calculated using Urbach plot. The optical band gap found to be decreased from 4.65 eV to 4.39 eV and the Urbach energy found to be increased from 60 meV to 162 meV. The defect concentration of nonbridging oxygen hole centres (NBOHC) and E′ centres are found to be increased to 1.69 × 10{sup 13} cm{sup −3} and 3.134 × 10{sup 14} cm{sup −3} respectively. In PL spectra, the peak appeared at 1.92 eV and 2.7 eV envisage the defects of nonbridging oxygen hole centres and B{sub 2α} oxygen deficient centres respectively. ESR spectra also confirms the existence of E′ and NBOHC centres. FTIR spectra shows scissioning of Si-O-Si bonds and the formation of Si-H and Si-OH bonds, which supports to the co-existence of the defects induced by Ag

  18. Structural disorder in sapphire induced by 90.3 MeV xenon ions

    International Nuclear Information System (INIS)

    Kabir, A.; Meftah, A.; Stoquert, J.P.; Toulemonde, M.; Monnet, I.; Izerrouken, M.

    2010-01-01

    In our previous work , we have evidenced, using RBS-C, two effects in the aluminium sublattice of sapphire irradiated with 90.3 MeV xenon ions: a partial disorder creation that saturates at ∼40% followed above a threshold fluence by a highly disordered layer appearing behind the surface. In this work, by RBS-C analysis of the oxygen sublattice, we have observed only one regime of partial disorder creation that saturates at ∼60% in tracks of cross-section double of that found for the aluminium sublattice. Complementary analysis by X-ray diffraction shows that the lattice strain increases with the fluence until a maximum is reached about 7.5 x 10 12 ions/cm 2 . For higher fluences, strain decreases first indicating a little stress relaxation in the material and tends afterwards, to remain constant. This stress relaxation is found to be related to the aluminium sublattice high disorder.

  19. Effects of high energy (MeV) ion beam irradiation on polyethylene terephthalate

    International Nuclear Information System (INIS)

    Singh, Nandlal; Sharma, Anita; Avasthi, D.K.

    2003-01-01

    Irradiation effects of 50 MeV Li 3+ ion beams in polyethylene terephthalate (PET) films were studied with respect to their structural and electrical properties by using Fourier transform infrared (FTIR) spectroscopy and ac electrical measurement in the frequency range: 50-100 kHz at different temperatures of 30-150 deg. C. It is found that ac resistivity of PET decreases as frequency increases. The temperature dependencies of dielectric loss tangent exhibit a peak (T g ) at 60 deg. C. The capacitance value of irradiated PET is almost temperature independent and ones increases with an increasing of lithium fluence. FTIR spectra show various bands related to C-H, C-O, C-O-C molecular bonds and groups which get modified or break down due to ion beam irradiation

  20. RBS cross-section of MeV ions channeling in crystals from quantum theory

    International Nuclear Information System (INIS)

    Den Besten, J.L.; Jamieson, D.N.; Spizzirri, P.G.; Allen, L.J.

    1999-01-01

    We present an alternative approach to describing Rutherford Backscattered (RBS) angular yield scans. The Bloch wave method to formulate the cross-section is a fundamental approach originating from Schrodinger's equation. This quantum formulation is often used when describing various aspects of electron diffraction including Backscattering, EDX and TEM but has seen little application to the very short wavelength regime of MeV ions. It offers several significant advantages. Great freedom is given to crystal properties and structure in the theory allowing a fundamental insight into the channeling phenomena and hence the crystal itself. We have calculated both planar and axial channeling scans and these maps are shown to be in good agreement to their experimental counterparts. There is excellent correlation between the theoretical and experimental results for both χ min and Ψ 1/2 . Further investigation is required into the area of absorption or dechanneling. This phenomenon requires different mechanisms for electron and ion scattering differ greatly

  1. Structure Characterization of Modified Polyimide Films Irradiated by 2 MeV Si Ions

    International Nuclear Information System (INIS)

    Tian-Xiang, Chen; Shu-De, Yao; Kun, Wang; Huan, Wang; Zhi-Bo, Ding; Di, Chen

    2009-01-01

    Structures of polyimide (6051) films modified by irradiation of 2.0 MeV Si ions with different fluences are studied in detail. Variations of the functional groups in polyimide are investigated by attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and Raman spectroscopy. The results indicate that the functional groups can be destroyed gradually with the increasing ion fluence. The variations of structure and element contents are characterized by x-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and x-ray photoelectron spectroscopy (XPS). The results indicate that the contents of N and O decrease significantly compared with the original samples, some graphite-like and carbon-rich phases are formed in the process of irradiation

  2. Meqalac Results - Multichannel Rf Acceleration of Nitrogen-Ions to 1 Mev

    NARCIS (Netherlands)

    Wojke, R. G. C.; Bannenberg, J. G.; Vijftigschild, A. J. M.; Giskes, F. G.; Ficke, H. G.; Klein, H.; Thomae, R. W.; Schempp, A.; Weis, T.; van Amersfoort, P. W.; Urbanus, W. H.

    1991-01-01

    In the MEQALAC (Multiple Electrostatic Quadrupole Linear Accelerator) multiple N+ ion beams are accelerated in 32 rf gaps, which are part of a modified interdigital-H-resonator operating at 25 MHz. The transverse focusing of the intense ion beams is achieved by means of sets of miniaturized

  3. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  4. Calculation of ballistic focusing of ion beams

    International Nuclear Information System (INIS)

    Astrelin, V.T.; Syresin, E.M.

    1984-01-01

    The motion of ions passing from the homogeneous magnetic field into a conical one is treated analytically in paraxial approximation. Further ions transform into neutral particles at the recharging target which is placed in the conical area of field. The optimal conditions for maximum compression of the beams of neutral particles are investigated. An influence of the initial angular spread on the beam compression is analysed. The computation results together with the those of analytical treatment are presented

  5. High energy (MeV) ion-irradiated π-conjugated polyaniline: Transition from insulating state to carbonized conducting state

    International Nuclear Information System (INIS)

    Park, S.K.; Lee, S.Y.; Lee, C.S.; Kim, H.M.; Joo, J.; Beag, Y.W.; Koh, S.K.

    2004-01-01

    High energy (MeV) C 2+ , F 2+ , and Cl 2+ ions were irradiated onto π-conjugated polyaniline emeraldine base (PAN-EB) samples. The energy of an ion beam was controlled to a range of 3-4.5 MeV, with the ion dosage varying from 1x10 12 to 1x10 16 ions/cm 2 . The highest dc conductivity (σ dc ) at room temperature was measured to be ∼60 S/cm for 4.5 MeV Cl 2+ ion-irradiated PAN-EB samples with a dose of 1x10 16 ions/cm 2 . We observed the transition of high energy ion-irradiated PAN-EB samples from insulating state to conducting state as a function of ion dosage based on σ dc and its temperature dependence. The characteristic peaks of the Raman spectrum of the PAN-EB samples were reduced, while the D-peak (disordered peak) and the G peak (graphitic peak) appeared as the ion dose increased. From the analysis of the D and G peaks of the Raman spectra of the systems compared to multiwalled carbon nanotubes, ion-irradiated graphites, and annealed carbon films, the number of the clusters of hexagon rings with conducting sp 2 -bonded carbons increased with ion dosage. We also observed the increase in the size of the nanocrystalline graphitic domain of the systems with increasing ion dosage. The intensity of normalized electron paramagnelic resonance signal also increased in correlation with ion dose. The results of this study demonstrate that π-conjugated pristine PAN-EB systems changed from insulating state to carbonized conducting state through high energy ion irradiation with high ion dosage

  6. Experimental and Calculated Effectiveness of a Radiochromic Dye Film to Stopping 21 MeV 7Li- and 64 MeV 16O Ions

    DEFF Research Database (Denmark)

    Olsen, Kjeld J; Hansen, Johnny

    1984-01-01

    Relative radiation effectiveness, RE, of 21 MeV 7Li and 64 MeV 16O ions being completely stopped in a tissue equivalent film dose meter has been measured as a function of penetration depth and energy, and the results have been compared with calculations based on a δ-ray theory for heavy charged...... particles developed by Katz et al. The experiment was designed to test calculations particularly in the Bragg-peak region of the slowing down particles where significant deviation between theory and experiment was found. Fitting of the characteristic D37 dose and the size of the radiation sensitive element...... in the detector, which are important parameters in the theoretical model, does not improve the overall correlation between theory and experiment. It is concluded that disagreement between theoretical and experimental RE-values below 1.5 MeV/amu is partly due to lack of equivalence between the δ-ray spectrum...

  7. Calibration of BAS-TR image plate response to high energy (3-300 MeV) carbon ions

    Science.gov (United States)

    Doria, D.; Kar, S.; Ahmed, H.; Alejo, A.; Fernandez, J.; Cerchez, M.; Gray, R. J.; Hanton, F.; MacLellan, D. A.; McKenna, P.; Najmudin, Z.; Neely, D.; Romagnani, L.; Ruiz, J. A.; Sarri, G.; Scullion, C.; Streeter, M.; Swantusch, M.; Willi, O.; Zepf, M.; Borghesi, M.

    2015-12-01

    The paper presents the calibration of Fuji BAS-TR image plate (IP) response to high energy carbon ions of different charge states by employing an intense laser-driven ion source, which allowed access to carbon energies up to 270 MeV. The calibration method consists of employing a Thomson parabola spectrometer to separate and spectrally resolve different ion species, and a slotted CR-39 solid state detector overlayed onto an image plate for an absolute calibration of the IP signal. An empirical response function was obtained which can be reasonably extrapolated to higher ion energies. The experimental data also show that the IP response is independent of ion charge states.

  8. Stopping power of liquid water for carbon ions in the energy range between 1 MeV and 6 MeV

    International Nuclear Information System (INIS)

    Rahm, J M; Baek, W Y; Rabus, H; Hofsäss, H

    2014-01-01

    The stopping power of liquid water was measured for the first time for carbon ions in the energy range between 1 and 6 MeV using the inverted Doppler shift attenuation method. The feasibility study carried out within the scope of the present work shows that this method is well suited for the quantification of the controversial condensed phased effect in the stopping power for heavy ions in the intermediate energy range. The preliminary results of this work indicate that the stopping power of water for carbon ions with energies prevailing in the Bragg-peak region is significantly lower than that of water vapor. In view of the relatively high uncertainty of the present results, a new experiment with uncertainties less than the predicted difference between the stopping powers of both water phases is planned. (paper)

  9. Momentum transfer with light ions at energies from 70 MeV to 1000 MeV

    International Nuclear Information System (INIS)

    Saint Laurent, F.; Conjeaud, M.; Dayras, R.; Harar, S.; Oeschler, H.; Volant, C.

    1982-01-01

    Angular correlations of fission fragments induced by bombarding a 232 Th target with protons, deuterons and alpha particles of energies from 70 MeV to 1000 MeV have been measured. They give information about the forward momentum imparted to the fissioning nuclei. We present the average values of the transferred linear momentum ([p vertical stroke vertical stroke ]) as a function of the incident energy and propose a classification into three regimes of dominating processes leading to fission: (I) low-energy behaviour, for E/A less than 10 MeV/u [p vertical stroke vertical stroke ]/psub(i) approx. equal to 1. (II) Between 10 MeV/u and about 70 MeV/u, [p vertical stroke vertical stroke ]/psub(i) decreases progressively down to 0.5 but remains proportional to the projectile mass. (III) The region between 70 MeV/u and about 1000 MeV/u corresponds to a transition region where the projectiles, whatever their masses, tend to transfer the same momentum. (orig.)

  10. High repetition rate laser-driven MeV ion acceleration at variable background pressures

    Science.gov (United States)

    Snyder, Joseph; Ngirmang, Gregory; Orban, Chris; Feister, Scott; Morrison, John; Frische, Kyle; Chowdhury, Enam; Roquemore, W. M.

    2017-10-01

    Ultra-intense laser-plasma interactions (LPI) can produce highly energetic photons, electrons, and ions with numerous potential real-world applications. Many of these applications will require repeatable, high repetition targets that are suitable for LPI experiments. Liquid targets can meet many of these needs, but they typically require higher chamber pressure than is used for many low repetition rate experiments. The effect of background pressure on the LPI has not been thoroughly studied. With this in mind, the Extreme Light group at the Air Force Research Lab has carried out MeV ion and electron acceleration experiments at kHz repetition rate with background pressures ranging from 30 mTorr to >1 Torr using a submicron ethylene glycol liquid sheet target. We present these results and provide two-dimensional particle-in-cell simulation results that offer insight on the thresholds for the efficient acceleration of electrons and ions. This research is supported by the Air Force Office of Scientific Research under LRIR Project 17RQCOR504 under the management of Dr. Riq Parra and Dr. Jean-Luc Cambier. Support was also provided by the DOD HPCMP Internship Program.

  11. 100 MeV Ag{sup 7+} ion induced physicochemical changes in isotactic polypropylene

    Energy Technology Data Exchange (ETDEWEB)

    Mathakari, N.L. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India); Kanjilal, D. [Inter University Accelerator Center, New Delhi (India); Bhoraskar, V.N. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India); Dhole, S.D. [Microtron Accelerator Laboratory, Department of Physics, University of Pune, Ganeshkhind, Pune 411007, Maharashtra (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-04-15

    Thin films of isotactic polypropylene having 500 {mu}m thickness were irradiated with 100 MeV Ag{sup 7+} ions at the fluences varying from 10{sup 11} to 5 x 10{sup 12} ions/cm{sup 2}. The properties such as chemical, optical, structural and surface morphology were characterized by techniques namely FTIR, UV-visible, photoluminescence, XRD, SEM and contact angle method. The FTIR spectra show the scissioning of C-H and C-C bonds, whereas, in photoluminescence, the intensities of the peaks at 440 and 480 nm in emission spectra and at 236 nm in excitation spectra observed to be decreased with increase in ion fluence. This may be due to the decomposition of luminescent centers. The UV-visible spectra also show a remarkable red shift from 218 to 367 nm and the subsequent large reduction in the optical band gap from 5.37 to 3.39 eV. This attributes to the carbonization or graphitization of polypropylene. On the contrary, the intensities of XRD peaks, particularly the peak due to 1 1 0 planes, shows sufficient enhancement which signifies overall increase in crystallinity. This ascribes to relief in the local strain on the crystallites due to scissioning of tie molecules in the amorphous zones. The contact angle has increased from 78 deg. to 97 deg. which reveals the absence of hydrophilic functional groups, carbonization and surface roughening. The result is also supported by SEM analysis.

  12. Depth distribution of carrier lifetime in 65 MeV oxygen ion irradiated silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Ecotopia Science Institute, Division of Energy Science, Nagoya University, Nagoya (Japan); Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411 007 (India); Kanjilal, D. [Nuclear Science Centre, New Delhi (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411 007 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 411 007 (India)]. E-mail: sanjay@physics.unipune.ernet.in

    2006-03-15

    CZ-grown, n-doped crystalline Si(1 1 1) of resistivity 60 {omega} cm and 140 {omega} cm were irradiated with 65 MeV energy oxygen ions, in the fluence range of 2 x 10{sup 1}-10{sup 14} ions/cm{sup 2}. The depth and spatial profile of excess minority carrier recombination time {tau} (lifetime) was measured using photoconductive decay (PCD) method. Lifetime measurements were carried out before the stopping range of impinging ions. Results show a monotonous decrease in lifetime with fluence, which is attributed to defect creation mechanism by electronic energy loss based on the thermal spike model. Also, surface modification is expected with a small loss in crystalline quality. This surface is considered to be a multi-crystalline surface with large grain boundaries that act as trapping sites for excess holes in n-Si(1 1 1). Annealing of the irradiated samples showed a near complete recovery at 750 deg. C for a period of 1 h.

  13. Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

    International Nuclear Information System (INIS)

    Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

    2008-01-01

    The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

  14. Magnetic properties of a stainless steel irradiated with 6 MeV Xe ions

    Science.gov (United States)

    Xu, Chaoliang; Liu, Xiangbing; Qian, Wangjie; Li, Yuanfei

    2017-11-01

    Specimens of austenitic stainless steel were irradiated with 6 MeV Xe ions at room temperature to 2, 7, 15 and 25 dpa. The vibrating sample magnetometer (VSM), grazing incidence X-ray diffraction (GIXRD) and positron annihilation lifetime spectroscopy (PLS) were carried out to analysis the magnetic properties and microstructural variations. The magnetic hysteresis loops indicated that higher irradiation damage causes more significant magnetization phenomenon. The equivalent saturated magnetization Mes and coercive force Hc were obtained from magnetic hysteresis loops. It is indicated that the Mes increases with irradiation damage. While Hc increases first to 2 dpa and then decreases continuously with irradiation damage. The different contributions of irradiation defects and ferrite precipitates on Mes and Hc can explain these phenomena.

  15. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He+ ion implantation

    International Nuclear Information System (INIS)

    Yang kang; Ma Mingwang; Chen Xiliang; Zhu Zhiyong

    2009-01-01

    The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials), and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA), we irradiated the (100)-oriented, low-temperature (LT) grown GaAs substrate with 10 16 /cm 2 of 2 MeV helium ions. After being implanted, electric resistance of the PCA has increased from 800 Ω to 60 ΜΩ. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly, its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement. (authors)

  16. Temporal evolution of ion energy in a plasma focus

    International Nuclear Information System (INIS)

    Rhee, M.J.; Weidman, D.J.

    1988-01-01

    For the first time, the temporal structure of ion energy in a plasma focus is revealed using a time-resolving Thomson spectrometer. The velocities and arrival times of ions are determined from the spectrogram. The resulting distribution of ions in velocity--time space at the source is found to be a line distribution, as if the ions were accelerated in a diode by a pulsed voltage

  17. Fragment ion distribution in charge-changing collisions of 2-MeV Si ions with C60

    Science.gov (United States)

    Itoh, A.; Tsuchida, H.; Miyabe, K.; Majima, T.; Nakai, Y.

    2001-09-01

    We have measured positive fragment ions produced in collisions of 2 MeV Siq+ (q=0, 1, 2, 4) projectiles with a C60 molecular target. The measurement was performed with a time-of-flight coincidence method between fragment ions and charge-selected outgoing projectiles. For all the charge-changing collisions investigated here, the mass distribution of small fragment ions C+n (n=1-12) can be approximated fairly well by a power-law form of n-λ as a function of the cluster size n. The power λ derived from each mass distribution is found to change strongly according to different charge-changing collisions. As a remarkable experimental finding, the values of λ(loss) in electron loss collisions are almost the same for the same final charge states k irrespective of the initial charge q, exhibiting a nearly perfect linear relationship with k. We also performed calculations of the projectile ionization on the basis of the semiclassical approximation and obtained inelastic energy deposition for individual collision processes. The estimated energy deposition is found to have a simple correlation with the experimentally determined values of λ(loss).

  18. Multi-dimensional microanalysis of masklessly implanted atoms using focused heavy ion beam

    International Nuclear Information System (INIS)

    Mokuno, Yoshiaki; Iiorino, Yuji; Chayahara, Akiyoshi; Kiuchi, Masato; Fujii, Kanenaga; Satou, Mamoru

    1992-01-01

    Multi-dimensional structure fabricated by maskless MeV gold implantation in silicon wafer was analyzed by 3 MeV carbon ion microprobe using a microbeam line developed at GIRIO. The minimum line width of the implanted region was estimated to be about 5 μm. The advantages of heavy ions for microanalysis were demonstrated. (author)

  19. Secondary electron emission of thin carbon foils under the impact of hydrogen atoms, ions and molecular ions, under energies within the MeV range

    International Nuclear Information System (INIS)

    Vidovic, Z.

    1997-06-01

    This work focuses on the study of the emission statistics of secondary electrons from thin carbon foils bombarded with H 0 , H 2 + and H 3 + projectiles in the 0.25-2.2 MeV energy range. The phenomenon of secondary electron emission from solids under the impact of swift ions is mainly due to inelastic interactions with target electrons. The phenomenological and theoretical descriptions, as well as a summary of the main theoretical models are the subject of the first chapter. The experimental set-up used to measure event by event the electron emission of the two faces of a thin carbon foil traversed by an energetic projectile is described in the chapter two. In this chapter are also presented the method and algorithms used to process experimental spectra in order to obtain the statistical distribution of the emitted electrons. Chapter three presents the measurements of secondary electron emission induced by H atoms passing through thin carbon foils. The secondary electron yields are studied in correlation with the emergent projectile charge state. We show the peculiar role of the projectile electron, whether it remains or not bound to the incident proton. The fourth chapter is dedicated to the secondary electron emission induced by H 2 + and H 3 + polyatomic ions. The results are interpreted in terms of collective effects in the interactions of these ions with solids. The role of the proximity of the protons, molecular ion fragments, upon the amplitude of these collective effects is evidenced from the study of the statistics of forward emission. These experiences allowed us to shed light on various aspects of atom and polyatomic ion inter-actions with solid surfaces. (author)

  20. 160 MeV Ni12+ ion irradiation effects on the dielectric properties of polyaniline nanotubes

    International Nuclear Information System (INIS)

    Hazarika, J.; Nath, Chandrani; Kumar, A.

    2012-01-01

    We report on the dielectric properties and a.c. conductivity studies of CSA doped polyaniline nanotubes. Nanotubes of 47–100 nm diameter, were synthesized by the self-assembly method and irradiated using Ni 12+ ions of 160 MeV energy with fluences of 1 × 10 10 , 5 × 10 10 , 1 × 10 11 and 3 × 10 11 ions/cm 2 . X-ray diffraction studies reveal an increase in the degree of crystallinity and consequently, the extent of order of the nanotubes with increasing fluence, but show a lower degree of crystallinity at higher fluence. The decrease in d-spacing for the (100) reflections with fluence is ascribed to the decrease in the tilt angle of the aligned polymer chains. A significant change was seen after irradiation in dielectric and electrical properties which may be correlated with the increased carrier concentration and structural modifications in the polymer films. The surface conductivity of films increases with increasing fluence, which also decreases at higher fluence. The a.c. conduction mechanism for the nanotubes could be explained in terms of correlated barrier hopping model. The existence of polarons as the major charge carriers in the present nanotube system was confirmed by the low values of polaron binding energy, found to decrease with fluence. The hopping distance increases with fluence indicating that the hopping probability increases with fluence.

  1. Charge-state distribution in close collisions of 3 MeV C2+ ions with Ag and Au atoms

    NARCIS (Netherlands)

    Boerma, D.O; Arnoldbik, W.M.; Kabachnik, N.M.; Khodyrev, V.A.

    The charge-state distributions of 3 MeV carbon ions scattered over angles of 40 degrees and 60 degrees from sub-monolayers of Ag and Au atoms evaporated on a substrate and from thick layers of Ag and Au have been measured. A close similarity of the charge distributions in all cases is interpreted as

  2. Fluctuation Induced Conductivity Studies of 100 MeV Oxygen Ion Irradiated Pb Doped Bi-2223 Superconductors

    NARCIS (Netherlands)

    Banerjee, Tamalika; Kumar, Ravi; Kanjilal, D.; Ramasamy, S.

    2000-01-01

    We report on 100 MeV oxygen ion irradiation in Pb doped Bi-2223 superconductors. Resistivity measurements reveal that both grains as well as the grain boundaries are affected by such irradiation. An analysis of the excess conductivity has been made within the framework of Aslamazov-Larkin (AL) and

  3. Comparison of 4.2 MeV Fe+ and 46.5 MeV Ni6+ ion irradiation for the study of void swelling

    International Nuclear Information System (INIS)

    Blamires, N.G.; Worth, J.H.

    1975-11-01

    Void formation in pure nickel and 316 steel containing 10 ppm He has been studied using 4.2 MeV Fe+ ions from the Harwell Van de Graaff accelerator. The dose dependence of swelling in nickel at 525degC and the dose and temperature dependence of swelling in 316 steel is reported. The results are compared with those of other workers, especially those sup(13,14) using 46.5 MeV Ni 6+ ions. In general, there is good agment, except for a marked decrease in swelling of 316 steel at 650degC and 700degC compared with the Ni 6+ bombardment. The reason for this is thought to result from the restricted width of the damaged region in the low energy case which at the high temperatures is comparable with the inter-void spacing. Anomalous void distributions adjacent to grain boundaries are reported and are probably caused by grain boundary movement. Denuded zones at grain boundaries in 316 steel vary in width from approximatly 1300A at 450degC to approximatly 8800A at 700degC. The region adjacent to the surface of the nickel specimens exhibits an abnormally high swelling. Possible explanations are suggested

  4. Conceptual study of a heavy-ion-ERDA spectrometer for energies below 6 MeV

    Science.gov (United States)

    Julin, Jaakko; Sajavaara, Timo

    2017-09-01

    Elastic recoil detection analysis (ERDA) is a well established technique and it offers unique capabilities in thin film analysis. Simultaneous detection and depth profiling of all elements, including hydrogen, is possible only with time-of-flight ERDA. Bragg ionization chambers or ΔE - E detectors can also be used to identify the recoiling element if sufficiently high energies are used. The chief limitations of time-of-flight ERDA are the beam induced sample damage and the requirement of a relatively large accelerator. In this paper we propose a detector setup, which could be used with 3 MeV to 6 MeV medium heavy beams from either a single ended accelerator (40Ar) or from a tandem accelerator (39K). The detector setup consists of two timing detectors and a gas ionization chamber energy detector. Compared to use of very heavy low energy ions the hydrogen recoils with this beam have sufficient energy to be detected with current gas ionization chamber energy detector. To reduce the beam induced damage the proposed detector setup covers a solid angle larger than 1 msr, roughly an order of magnitude improvement over most time-of-flight ERDA setups. The setup could be used together with a small accelerator to be used for light element analysis of approximately 50 nm films. The concept is tested with 39K beam from a 1.7 MV Pelletron tandem accelerator with the Jyväskylä ToF-ERDA setup. In addition to the measurements effects related to low energies and increase in the solid angle are simulated with Monte Carlo methods.

  5. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    International Nuclear Information System (INIS)

    Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

    2006-01-01

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  6. Ion beam synthesis of IrSi3 by implantation of 2 MeV Ir ions

    International Nuclear Information System (INIS)

    Sjoreen, T.P.; Chisholm, M.F.; Hinneberg, H.J.

    1992-11-01

    Formation of a buried IrSi 3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450--550C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi 3 layer is produced at 550C by implanting ≥ 3.4 x 10 17 Ir/cm 2 and subsequently annealing for 1 h at 1000C plus 5 h at 1100C. At a dose of 3.4 x 10 17 Ir/cm 2 , the thickness of the layer varied between 120 and 190 nm and many large IrSi 3 precipitates were present above and below the film. Increasing the dose to 4.4 x 10 17 Ir/cm 2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi 3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved

  7. Focused ion beam machining and deposition for nanofabrication

    Energy Technology Data Exchange (ETDEWEB)

    Davies, S T; Khamsehpour, B [Warwick Univ., Coventry (United Kingdom). Dept. of Engineering

    1996-05-01

    Focused ion beam micromatching (FIBM) and focused ion beam deposition (FIBD) enable spatially selective, maskless, patterning and processing of materials at extremely high levels of resolution. State-of-the-art focused ion beam (FIB) columns based on high brightness liquid metal ion source (LMIS) technology are capable of forming probes with dimensions of order 10 nm with a lower limit on spot size set by the inherent energy spread of the LMIS and the chromatic aberration of ion optical systems. The combination of high lateral and depth resolution make FIBM and FIBD powerful tools for nanotechnology applications. In this paper we present some methods of controlling FIBM and FIBD processes for nanofabrication purposes and discuss their limitations. (author).

  8. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  9. Development of the integrated control system for the microwave ion source of the PEFP 100-MeV proton accelerator

    Science.gov (United States)

    Song, Young-Gi; Seol, Kyung-Tae; Jang, Ji-Ho; Kwon, Hyeok-Jung; Cho, Yong-Sub

    2012-07-01

    The Proton Engineering Frontier Project (PEFP) 20-MeV proton linear accelerator is currently operating at the Korea Atomic Energy Research Institute (KAERI). The ion source of the 100-MeV proton linac needs at least a 100-hour operation time. To meet the goal, we have developed a microwave ion source that uses no filament. For the ion source, a remote control system has been developed by using experimental physics and the industrial control system (EPICS) software framework. The control system consists of a versa module europa (VME) and EPICS-based embedded applications running on a VxWorks real-time operating system. The main purpose of the control system is to control and monitor the operational variables of the components remotely and to protect operators from radiation exposure and the components from critical problems during beam extraction. We successfully performed the operation test of the control system to confirm the degree of safety during the hardware performance.

  10. Ion clusters, REB, and current sheath characteristics in focused discharges

    International Nuclear Information System (INIS)

    Bortolotti, A.; Brzosko, J.; DeChiara, P.; Kilic, H.; Mezzetti, F.; Nardi, V.; Powell, C.; Zeng, D.

    1990-01-01

    Small fluctuations in the current sheath characteristics (peak current density, FWHM of leading sheath, control parameters of sheath internal structure) are linked to wide fluctuations of ion and ion cluster emission from the pinch. Magnetic probe data are used for correlating variations of current sheath parameters with particle emission intensity, Z/M composition, particle energy spectrum. The emission of ion and ion clusters at 90 degrees from the axis of a plasma focus discharge is monitored simultaneously with the 0 degrees emission. The particle energy spectrum is analyzed with a Thomson (parabola) spectrometer (time resolution ∼ 1 nanosec). The cross-sectional structure of the REB at 180 degrees along the discharge axis is monitored via the deposition of collective-field accelerated ions on a target in the REB direction. Etched tracks of ion and ion clusters are in all cases recorded on CR-39 plates. Sharp peaks of the D + -ion spectrum at 90 degrees are found for E > 200 keV/unit charge in all focused discharges. These peaks are due to ion crossing of the azimuthal magnetic field of the pinch region, in a predominant ion cluster structure

  11. A novel facility for 3D micro-irradiation of living cells in a controlled environment by MeV ions.

    Science.gov (United States)

    Mäckel, V; Meissl, W; Ikeda, T; Clever, M; Meissl, E; Kobayashi, T; Kojima, T M; Imamoto, N; Ogiwara, K; Yamazaki, Y

    2014-01-01

    We present a novel facility for micro-irradiation of living targets with ions from a 1.7 MV tandem accelerator. We show results using 1 MeV protons and 2 MeV He(2+). In contrast to common micro-irradiation facilities, which use electromagnetic or electrostatic focusing and specially designed vacuum windows, we employ a tapered glass capillary with a thin end window, made from polystyrene with a thickness of 1-2 μm, for ion focusing and extraction. The capillary is connected to a beamline tilted vertically by 45°, which allows for easy immersion of the extracted ions into liquid environment within a standard cell culture dish. An inverted microscope is used for simultaneously observing the samples as well as the capillary tip, while a stage-top incubator provides an appropriate environment for the samples. Furthermore, our setup allows to target volumes in cells within a μm(3) resolution, while monitoring the target in real time during and after irradiation.

  12. Monte Carlo simulation of channeled and random profiles of heavy ions implanted in silicon at high energy (1.2 MeV)

    International Nuclear Information System (INIS)

    Mazzone, A.M.

    1987-01-01

    In order to study channeling effects and implants of heavy ions with energy of few MeV in silicon, ion distributions are calculated with a Monte Carlo method for axial [(001) axis], planar, and nominally random directions for As + and P + ions implanted into silicon with energies in the range 100 keV to 2 MeV. The calculation indicates an appreciable channeling at the higher energy only for the (001) axis and the (110) planes. For heavy ions with energy in the MeV range the subsidence of channeling into major channels and the disappearance of minor channels are shown

  13. In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiation

    International Nuclear Information System (INIS)

    Weber, W.J.; Yu, N.; Sickafus, K.E.

    1995-05-01

    This paper describes use of the in situ ion beam analysis facility developed at Los Alamos National Laboratory for the study of irradiation effects in ceramic materials. In this facility, an analytical beamline of 3 MV tandem accelerator and an irradiation bean-dine of 200 kV ion implanter are connected at 60 degrees to a common target chamber. This facility provides a fast, efficient, and quantitative measurement tool to monitor changes of composition and crystallinity of materials irradiated by 100-400 keV ions, through sequential measurement of backscattering events of MeV ions combined with ion channeling techniques. We will describe the details of the in situ ion beam analysis and ion irradiation and discuss some of the important issues and their solutions associated with the in situ experiment. These issues include (1) the selection of axial ion channeling direction for the measurement of radiation damage; (2) surface charging and charge collection for data acquisition; (3) surface sputtering during ion irradiation; (4) the effects of MeV analytical beam on the materials; and (5) the sample heating effect on ion beam analysis

  14. Light-Ion Production in the Interaction of 96 MeV Neutrons with Silicon

    International Nuclear Information System (INIS)

    Tippawan, U.; Dangtip, S.; Pomp, S.; Atac, A.; Bergenwall, B.; Blomgren, J.; Hildebrand, A.; Johansson, C.; Klug, J.; Mermod, P.; Oesterlund, M.; Nilsson, L.; Elmgren, K.; Olsson, N.; Jonsson, O.; Prokofiev, A.V.; Renberg, P.-U.; Nadel-Turonski, P.; Corcalciuc, V.; Watanabe, Y.

    2005-01-01

    Radiation effects induced by terrestrial cosmic rays in microelectronics, on board aircrafts as well as at sea level, have recently attracted much attention. The most important particle radiation is due to spallation neutrons, created in the atmosphere by cosmic-ray protons. When, e.g., an electronic memory circuit is exposed to neutron radiation, charged particles can be produced in a nuclear reaction. The charge released by ionization can cause a flip of the memory content in a bit, which is called a single-event upset (SEU). This induces no hardware damage to the circuit, but unwanted re-programming of memories, CPUs, etc., can have consequences for the reliability, and ultimately also for the safety of the system.Data on energy and angular distributions of the secondary particles produced by neutrons in silicon nuclei are essential input for analyses and calculation of SEU rate. In this work, double-differential cross sections of inclusive light-ion (p, d, t, 3He and α) production in silicon, induced by 96 MeV neutrons, are presented. Energy distributions are measured at eight laboratory angles from 20 deg. to 160 deg. in steps of 20 deg. Deduced energy-differential and production cross sections are reported as well. Experimental cross sections are compared to theoretical reaction model calculations and existing experimental data in the literature

  15. Strain buildup in GaAs due to 100 MeV Ag ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Shramana; Bhaumik, Sudipta; Panda, Jaya Kumar [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Ojha, Sunil [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Dhar, Achintya [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Roy, Anushree, E-mail: anushree@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India)

    2013-12-01

    The formation of strained layers and a non-monotonic evolution of strain in high energy (100 MeV) silver ion (Ag{sup 7+}) irradiated undoped semi-insulating GaAs are observed and analyzed using Raman scattering and high resolution X-ray diffraction (HRXRD) measurements. At low fluence, compressively strained layers are formed, whereas, with increase in fluence both compressive and tensile strains appear as observed from HRXRD measurements. Further, at low fluence, the change in compressive strain with increase in fluence is found to be sharper than what is observed at higher fluence, thereby suggesting a critical fluence value, beyond which there is a simultaneous generation and annihilation of vacancy type defects. The initial blue shift and subsequent relative red shift beyond above critical fluence in the Raman peak also qualitatively reveal non-monotonic evolution of strain in this case. Finally, we demonstrate the sensitivity of Raman spectroscopy in detecting the decrease in lattice ordering in the crystal in the low fluence regime, below the detection limit of Rutherford back-scattering channeling (c-RBS) measurements.

  16. Applications of capillary optics for focused ion beams

    International Nuclear Information System (INIS)

    Umezawa, Kenji

    2014-01-01

    This article introduces applications of focused ion beams (∼1 μm) with glass capillaries systems. A first report on the interaction between ion beams and glass capillaries was published in 1996. The guiding capabilities of glass capillaries were discovered due to ion reflection from inner wall of glass surfaces. Meanwhile, the similar optics have been already realized in focusing X-rays using glass capillaries. The basic technology of X-rays optics using glass capillaries had been developed in the 1980's and 1900's. Also, low energy atom scattering spectroscopy for insulator material analysis will be mentioned. (author)

  17. Alpha-heavy-ion angular correlations from /sup 28/Si + /sup 12/C. [84 to 91. 5 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Ost, R; Cole, A J [Institut des Sciences Nucleaires, 38 - Grenoble (France); Clover, M R; Fulton, B R; Sikora, B [Rochester Univ., NY (USA). Nuclear Structure Research Lab.

    1980-06-01

    Alpha particles have been measured in coincidence with heavy recoil nuclei from the /sup 28/Si + /sup 12/C reaction. At Esub(lab) = 87 MeV angular correlations for alphas between 15/sup 0/ and 55/sup 0/ and heavy ions at angles -9/sup 0/, -12/sup 0/ and -15/sup 0/ have been taken. An excitation function of coincidence events with THETAsub(..cap alpha..) = 30/sup 0/ and THETAsub(HI) = -12/sup 0/ has been measured for 84 MeV < Esub(lab) < 91.5 MeV. The results are well described by a statistical-model calculation for compound nucleus decay. No evidence is found for additional processes.

  18. High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

    International Nuclear Information System (INIS)

    Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

    1991-01-01

    The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

  19. Experimental and calculated effectiveness of a radiochromic dye film to stopping 21 MeV 7Li and 64 MeV 16O ions

    International Nuclear Information System (INIS)

    Olsen, K.J.; Hansen, J.W.

    1984-01-01

    Relative radiation effectiveness, RE, of 21 MeV 7 Li and 64 MeV 16 O ions being completely stopped in a tissue equivalent film dose meter has been measured as a function of penetration depth and energy, and the results have been compared with calculations based on a delta-ray theory for heavy charged particles developed by Katz et al. The experiment was designed to test calculations particularly in the Bragg-peak region of the slowing down particles where significant deviation between theory and experiment was found. Fitting of the characteristic D 37 dose and the size of the radiation sensitive element in the detector, which are important parameters in the theoretical model, does not improve the overall correlation between theory and experiment. It is concluded that disagreement between theoretical and experimental RE-values below 1.5 MeV/amu is partly due to lack of equivalence between the delta-ray spectrum and the slowing down spectrum of electrons from low-LET radiation, and partly from approximations in the calculated distribution of energy deposition of the delta-rays. (orig.)

  20. Generation and focusing of intense ion beams with an inverse pinch ion diode

    International Nuclear Information System (INIS)

    Hashimoto, Yoshiyuki; Sato, Morihiko; Yatsuzuka, Mitsuyasu; Nobuhara, Sadao

    1992-01-01

    Generation and focusing of ion beams using an inverse pinch ion diode with a flat anode has been studied. The ion beams generated with the inverse pinch ion diode were found to be focused at 120 mm from the anode by the electrostatic field in the diode. The energy and maximum current density of the ion beams were 180 keV and 420 A/cm 2 , respectively. The focusing angle of the ion beams was 4.3deg. The beam brightness was estimated to be 1.3 GW/cm 2 ·rad 2 . The focusing distance of the ion beams was found to be controllable by changing the diameters of the anode and cathode. (author)

  1. EPR and cathodoluminescence of defects in diamond irradiated by nickel ions with energy of 335 MeV

    International Nuclear Information System (INIS)

    Varichenko, V.S.; Martinovich, V.A.; Filipp, A.Z.; Didyk, A.Yu.

    1995-01-01

    Defect production in natural diamond irradiated by 335 MeV Ni ions within a dose range of 5·10 12 - 5·10 14 cm -2 has been studied by EPR and cathodoluminescence techniques. It is shown that the high energy ion irradiation leads to the appearance of modified track like one-dimensional structures with nontetrahedral coordination of atoms. A mechanism of microwave conductivity in modified structures of irradiated samples discussed in frame of a model of mobile quasi-particles of corresponding paramagnetic centres. Peculiarities of concentration distributions of paramagnetic centres corresponding to ion-modified structures and cathodoluminescence centres through the irradiated layer are connected with track channeling and stopped of a part of ions because of their elastic collisions with lattice atoms during ion stopping. (author). 18 refs., 5 figs

  2. 0.5 to 6 MeV Ar ion induced X-ray emission in view to analytical application

    International Nuclear Information System (INIS)

    Tenorio Castilleros, M.D.

    1979-01-01

    A study of the X-ray emission induced by 0.5 to 6 MeV Ar ions has been realized in view of multielemental analytical applications. The historical development of the use of heavy ion induced X-ray emission in analysis and the theoretical background of inner-shell ionization in heavy ion-atom collisions are described. The emission of non characteristic X-rays and the effects related to the penetration of heavy ions in matter are also related. The experimental part contains a description of the experimental devices and of the X-ray spectra fitting method. Thick target yields as a function of the target Z and the Ar ion energy are reported. The analytical possibilities are examined and an application to the analysis of Si and Cl in cadmium telluride crystals is given [fr

  3. Juno/JEDI observations of 0.01 to >10 MeV energetic ions in the Jovian auroral regions: Anticipating a source for polar X-ray emission

    Science.gov (United States)

    Haggerty, D. K.; Mauk, B. H.; Paranicas, C. P.; Clark, G.; Kollmann, P.; Rymer, A. M.; Bolton, S. J.; Connerney, J. E. P.; Levin, S. M.

    2017-07-01

    After a successful orbit insertion, the Juno spacecraft completed its first 53.5 day orbit and entered a very low altitude perijove with the full scientific payload operational for the first time on 27 August 2016. The Jupiter Energetic particle Detector Instrument measured ions and electrons over the auroral regions and through closest approach, with ions measured from 0.01 to >10 MeV, depending on species. This report focuses on the composition of the energetic ions observed during the first perijove of the Juno mission. Of particular interest are the ions that precipitate from the magnetosphere onto the polar atmosphere and ions that are accelerated locally by Jupiter's powerful auroral processes. We report preliminary findings on the spatial variations, species, including energy and pitch angle distributions throughout the prime science region during the first orbit of the Juno mission. The prime motivation for this work was to examine the heavy ions that are thought to be responsible for the observed polar X-rays. Jupiter Energetic particle Detector Instrument (JEDI) did observe precipitating heavy ions with energies >10 MeV, but for this perijove the intensities were far below those needed to account for previously observed polar X-ray emissions. During this survey we also found an unusual signal of ions between oxygen and sulfur. We include here a report on what appears to be a transitory observation of magnesium, or possibly sodium, at MeV energies through closest approach.

  4. Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

    2011-09-01

    Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

  5. Examination of fracture surfaces using focused ion beam milling

    International Nuclear Information System (INIS)

    Cairney, J.M.; Munroe, P.R.; Schneibel, J.H.

    2000-01-01

    Composite materials consisting of an iron aluminide matrix with composition approximately Fe-40at%Al, reinforced with a volume fraction of 40--70% ceramic particles (TiC, WC, TiB 2 or ZrB 2 ), are currently being developed. Focused ion beam milling is a relatively new tool to materials science. It uses a high resolution (<5nm), energetic beam of gallium ions to selectively sputter regions of a material, whilst also functioning as a scanning ion microscope. The milling accuracy is of the order of the beam size allowing very precise sectioning to be carried out. The focused ion beam can be used to prepare highly localized cross sections which reveal the internal sub-structure of materials, avoiding detrimental processes such as deformation, or closing of existing cracks by mechanical abrasion. An area is milled from the sample such that, upon tilting, the internal structure can be imaged. The focused ion beam therefore offers a unique opportunity to examine cross-sections of the fracture surfaces in FeAl-based composites. In the present study, the focused ion beam was used to obtain cross-sections of fracture surfaces in two composite materials, in order to examine the extent of interfacial debonding and matrix deformation, thus providing more information about the mode of fracture. These cross-sections were prepared at regions where significant debonding was observed

  6. Charge-state distributions of 100, 175, 275, and 352 MeV gold ions emerging from thin carbon foils

    International Nuclear Information System (INIS)

    Martin, J.A.; Auble, R.L.; Erb, K.A.; Jones, C.M.; Olsen, D.K.

    1985-01-01

    These measurements were undertaken as a consequence of our failure early this year to accelerate Au +46 ions in the Oak Ridge Isochronous Cyclotron using an injected beam of 352 MeV 197 Au +17 from the 25 MV tandem accelerator. Following that unsuccessful test, we made a preliminary measurement of the charge-state distribution of 352 MeV 197 Au ions emerging from a carbon foil using the bending magnet that is a part of the cyclotron beam injection system. The measured mean charge was approx.38.5, about 4.5 charge-states lower than predicted by the Sayer semi-empirical formula. The measurements reported here were done more precisely and systematically confirm that preliminary result. 12 refs., 5 figs., 4 tabs

  7. Charge-state distributions of 100, 175, 275, and 352 MeV gold ions emerging from thin carbon foils

    Energy Technology Data Exchange (ETDEWEB)

    Martin, J.A.; Auble, R.L.; Erb, K.A.; Jones, C.M.; Olsen, D.K.

    1985-01-01

    These measurements were undertaken as a consequence of our failure early this year to accelerate Au/sup +46/ ions in the Oak Ridge Isochronous Cyclotron using an injected beam of 352 MeV /sup 197/Au/sup +17/ from the 25 MV tandem accelerator. Following that unsuccessful test, we made a preliminary measurement of the charge-state distribution of 352 MeV /sup 197/Au ions emerging from a carbon foil using the bending magnet that is a part of the cyclotron beam injection system. The measured mean charge was approx.38.5, about 4.5 charge-states lower than predicted by the Sayer semi-empirical formula. The measurements reported here were done more precisely and systematically confirm that preliminary result. 12 refs., 5 figs., 4 tabs.

  8. Stripping of 1.04 MeV per nucleon krypton ions in high molecular weight vapours

    International Nuclear Information System (INIS)

    Eastham, D.A.; Joy, T.; Clark, R.B.; King, R.

    1976-01-01

    Equilibrium charge state distributions have been measured for 1.04 MeV per nucleon krypton ions in heavy vapours with molecular weights from 462 to 6500. Non-equilibrium data are presented for the heaviest vapour. A maximum increase of 0.8 in the mean charge is found relative to a conventional diatomic gas but the pressures required are two orders of magnitude less. (Auth.)

  9. Nonlinear optical waveguides produced by MeV ion implantation in LiNbO3

    International Nuclear Information System (INIS)

    Sarkisov, S.S.; Curley, M.J.; Williams, E.K.; Ila, D.; Svetchnikov, V.L.; Zandbergen, H.W.; Zykov, G.A.; Banks, C.; Wang, J.-C.; Poker, D.B.; Hensley, D.K.

    2000-01-01

    We analyze microstructure, linear and nonlinear optical properties of planar waveguides produced by implantation of MeV Ag ions into LiNbO 3 . Linear optical properties are described by the parameters of waveguide propagation modes and optical absorption spectra. Nonlinear properties are described by the nonlinear refractive index. Operation of the implanted crystal as an optical waveguide is due to modification of the linear refractive index of the implanted region. The samples as implanted do not show any light-guiding. The implanted region has amorphous and porous microstructure with the refractive index lower than the substrate. Heat treatment of the implanted samples produces planar light-guiding layer near the implanted surface. High-resolution electron microscopy reveals re-crystallization of the host between the surface and the nuclear stopping region in the form of randomly oriented crystalline grains. They make up a light-guiding layer isolated from the bulk crystal by the nuclear stopping layer with low refractive index. Optical absorption of the sample as implanted has a peak at 430 nm. This peak is due to the surface plasmon resonance in nano-clusters of metallic silver. Heat treatment of the samples shifts the absorption peak to 545 nm. This is more likely due to the increase of the refractive index back to the value for the crystalline LiNbO 3 . The nonlinear refractive index of the samples at 532 nm (of the order of 10 -10 cm 2 W -1 ) was measured with the Z-scan technique using a picosecond laser source. Possible applications of the waveguides include ultra-fast photonic switches and modulators

  10. Paul Ion Trap as a Diagnostic for Plasma Focus

    Science.gov (United States)

    Sadat Kiai, S. M.; Adlparvar, S.; Zirak, A.; Alhooie, Samira; Elahi, M.; Sheibani, S.; Safarien, A.; Farhangi, S.; Dabirzadeh, A. A.; Khalaj, M. M.; Mahlooji, M. S.; KaKaei, S.; Talaei, A.; Kashani, A.; Tajik Ahmadi, H.; Zahedi, F.

    2010-02-01

    The plasma discharge contamination by high and low Z Impurities affect the rate of nuclear fusion reaction products, specially when light particles have to be confined. These impurities should be analyzed and can be fairly controlled. This paper reports on the development of a Paul ion trap with ion sources by impact electron ionization as a diagnostic for the 10 kJ Iranian sunshine plasma focus device. Preliminary results of the residual gas are analyzed and presented.

  11. Electron angular distributions in He single ionization impact by H2+ ions at 1 MeV

    International Nuclear Information System (INIS)

    Zhang Shaofeng; Ma Xinwen; Suske, J; Fischer, D; Kuehnel, K U; Voitkiv, A; Najjaril, B; Krauss, A; Moshammer, R; Ullrich, J; Hagmann, S

    2009-01-01

    For the first time we investigated in a kinematically complete experiment the ionization of helium in collisions with H 2 + -molecular ions at 1 MeV. Using two separate detectors, the orientation of the projectile H 2 + -molecular ions was determined at the instance of the collision. The electron angular distribution was measured by a R eaction Microscope . The observed structures are found in agreement with theoretical calculations, indicating that the ionized electron of He shows a slight preferential emission direction parallel to the molecular axis.

  12. Dose as a function of radial distance from a 930 MeV 4He ion beam

    International Nuclear Information System (INIS)

    Varma, M.N.; Paretzke, H.; Baum, J.W.; Lyman, J.T.; Howard, J.

    1975-01-01

    A unique mesh wall ionization chamber (approximating a wall-less ionization chamber) was used to measure dose as a function of radial distance from a 930 MeV 4 He ion beam in air. Measurements were made at distances from about 10 to 40 cm from the ion path. This represents simulated distances of approximately 102 to 404 μm in tissue having a density of 1 g/cm 3 . Experimental values are compared with theoretical calculations, and probable causes of differences found are discussed. (auth)

  13. Magnetoresistive nanojunctions fabricated via focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Stefanescu, E.; Hong, J.; Guduru, R. [Florida International University (United States); Lavrenov, A. [Hitachi Research (United States); Litvinov, D. [University of Houston, Center for Nanomagnetic Systems (United States); Khizroev, S., E-mail: khizroev@fiu.edu [Florida International University (United States)

    2013-01-15

    Focused ion beam (FIB) is used to implant Ga{sup +} ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 Micro-Sign m to {approx}80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of {approx}10{sup 3} ions/cm{sup 2} at a 1-pA FIB current is sufficient to fully 'de-activate' magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.

  14. Effect of 520 MeV Kr{sup 20+} ion irradiation on the critical current density of Bi-2212 single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Terai, Takayuki; Ito, Yasuyuki [Tokyo Univ. (Japan). Faculty of Engineering; Kishio, Kouji

    1996-10-01

    Change in magnetic properties of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+y} (Bi-2212) single crystals due to Kr{sup 20+} ion irradiation is reported, focused on critical current density and irreversibility magnetic field. The Bi-2212 single crystal specimens (3x3x0.3 mm{sup 3}) were prepared by the floating zone method. Each specimen was irradiated with 520 MeV Kr{sup 20+} ions of 10{sup 10}-10{sup 11} cm{sup -2} in the fluence. Magnetic hysteresis was measured at 4.2K-60K with a vibrating sample magnetometer before and after irradiation. Very large enhancement was observed in critical current density and irreversibility magnetic field above 20K. (author)

  15. 120 MeV Ni Ion beam induced modifications in poly (ethylene terephthalate) used in commercial bottled water

    International Nuclear Information System (INIS)

    Kumar, Vijay; Sonkawade, R. G.; Ali, Yasir; Dhaliwal, A. S.

    2012-01-01

    We report the effects of heavy ion irradiation on the optical, structural, and chemical properties of polyethylene terephthalate (PET) film used in commercial bottled water. PET bottles were exposed with 120 MeV Ni ions at fluences varying from 3 x 10 10 to 3 x 10 12 ion/cm 2 . The modifications so induced were analyzed by using UV-Vis, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy. Substantial decrease in optical band gap is observed with the increase in ion fluence. In the FTIR spectra, most of bands are decreased due the degradation of the molecular structure. XRD measurements show the decrease in peak intensity, which reflects the loss of crystallinity after irradiation.

  16. Ion-source dependence of the distributions of internuclear separations in 2-MeV HeH+ beams

    International Nuclear Information System (INIS)

    Kanter, E.P.; Gemmell, D.S.; Plesser, I.; Vager, Z.

    1981-01-01

    Experiments involving the use of MeV molecular-ion beams have yielded new information on atomic collisions in solids. A central part of the analyses of such experiments is a knowledge of the distribution of internuclear separations contained in the incident beam. In an attempt to determine how these distributions depend on ion-source gas conditions, we have studied foil-induced dissociations of H 2+ , H 3+ , HeH + , and OH 2+ ions. Although changes of ion-source gas compositions and pressure were found to have no measurable influence on the vibrational state populations of the beams reaching our target, for HeH + we found that beams produced in our rf source were vibrationally hotter than beams produced in a duoplasmatron. This was also seen in studies of neutral fragments and transmitted molecules

  17. Optical, structural, and chemical properties of CR-39 implanted with 5.2 MeV doubly charged carbon ions

    Science.gov (United States)

    Ali, Dilawar; Butt, M. Z.; Ishtiaq, Mohsin; Waqas Khaliq, M.; Bashir, Farooq

    2016-11-01

    Poly-allyl-diglycol-carbonate (CR-39) specimens were irradiated with 5.2 MeV doubly charged carbon ions using Pelletron accelerator. Ion dose was varied from 5 × 1013 to 5 × 1015 ions cm-2. Optical, structural, and chemical properties were investigated by UV-vis spectroscopy, x-ray diffractometer, and FTIR/Raman spectroscopy, respectively. It was found that optical absorption increases with increasing ion dose. Absorption edge shifts from UV region to visible region. The measured opacity values of pristine and ion implanted CR-39 range from 0.0519 to 4.7959 mm-1 following an exponential growth (9141%) with the increase in ion dose. The values of direct and indirect band gap energy decrease exponentially with an increase in ion dose by 59% and 71%, respectively. However, average refractive index in the visible region increases from 1.443 to 2.864 with an increase in ion dose, by 98%. A linear relation between band gap energy and crystallite size was observed. Both the number of carbon atoms in conjugation length and the number of carbon atoms per cluster increase linearly with the increase in ion dose. FTIR spectra showed that on C+2 ions irradiation, the intensity of all bands decreases gradually without appearance of any new band, indicating degradation of polymer after irradiation. Raman spectra revealed that the density of -CH2- group decreases on C+2 ions irradiation. However, the structure of CR-39 is completely destroyed on irradiation with ion dose 1 × 1015 and 5 × 1015 ions cm-2.

  18. Effect of 1.2 MeV argon ions irradiation on magnetic properties of ZnO

    International Nuclear Information System (INIS)

    Mishra, D.K.; Mohapatra, Jyoshnarani; Mahato, Banashree; Kumar, P.; Mitra, Amitav; Singh, S.K.; Kanjilal, D.

    2013-01-01

    Room temperature ferromagnetism in 1.2 MeV argon ions irradiated polycrystalline ZnO has been observed. The magnetic contribution in form of saturation magnetization is higher in sample irradiated with ion fluence of 1 × 10 15 ions/cm 2 . However, annealing of the defects at higher fluences of 5 × 10 15 ions/cm 2 reduce the magnetic contribution in comparison to the magnetic contribution of the lower fluences. The X-ray diffraction reveals that the degree of crystallinity decreases with the increase of ion fluences upto 1 × 10 15 ions/cm 2 and further it increases at a fluence of 5 × 10 15 ions/cm 2 . The inhomogeneous arrangement of grains and changes in their sizes with increasing ion fluences decrease the magnetic ordering of the system. The electron probe microstructure analyses and micro-Raman spectra of irradiated samples show in-homogeneity in zinc and oxygen ratio which is one of the causes to show ferromagnetism.

  19. Acceleration ion focusing (IFR) and transport experiments with the recirculating linear accelerator (RLA)

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Puokey, J.W.; Bennett, L.F.; Wagner, J.S.; Olson, W.R.; George, M.; Turman, B.N.; Prestwich, K.R.; Struve, K.W.

    1992-01-01

    The focusing and transport of intense relativistic electron beams in the Sandia Laboratories Recirculating Linear Accelerator (RLA) is accomplished with the aid of an ion focusing channel (IFR). We report here experiments evaluating the beam generation in the injector and its subsequent acceleration and transport through the first post-accelerating cavity. Two injectors and one type of post-accelerating cavity were studied. Beams of 6-20 kA current were injected and successfully transported and accelerated through the cavity. The transport efficiencies were 90% - 100%, and the beam Gaussian profile (4 MeV injector) and radius (5 mm) remained the same through acceleration. We describe the RLA, present the experimental results and compare them with numerical simulations. (Author) 3 refs., 7 figs

  20. Measurement of electron- and ion beam energies and currents in a plasma focus discharge

    International Nuclear Information System (INIS)

    Yamamoto, Toshikazu; Kondoh, Yoshiomi; Shimoda, Katsuji; Hirano, Katsumi

    1982-01-01

    Measurements of energetic particle beams in a plsma focus with a Mather type device are presented. Rogowski coils are used for time-resolved measurement, and solid-state nuclear track detectors for time-integrated measurement of the beams. In the upstream direction with respect to the discharge current, only the electron beam with the maximum current of several kA was detected, which was approximately one percent of the discharge current. The electron energies of the beam were spread from 0.1 to 1 MeV. In the downstream direction, two successive emissions of ions were observed. The first emission had an extremely high energy of the order of some MeV and a low beam current of less than 10 A. The second emission, the main part of the ion beam, with energies of 100 - 800 keV, followed the first one with a time lag of several tens of nanoseconds, and the beam current reached several tens of amperes. (author)

  1. Ion creation, ion focusing, ion/molecule reactions, ion separation, and ion detection in the open air in a small plastic device.

    Science.gov (United States)

    Baird, Zane; Wei, Pu; Cooks, R Graham

    2015-02-07

    A method is presented in which ions are generated and manipulated in the ambient environment using polymeric electrodes produced with a consumer-grade 3D printer. The ability to focus, separate, react, and detect ions in the ambient environment is demonstrated and the data agree well with simulated ion behaviour.

  2. Effects on focused ion beam irradiation on MOS transistors

    International Nuclear Information System (INIS)

    Campbell, A.N.; Peterson, K.A.; Fleetwood, D.M.; Soden, J.M.

    1997-01-01

    The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 μm minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga + focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated

  3. Nitriding of Ti substrate using energetic ions from plasma focus device

    International Nuclear Information System (INIS)

    Henriquez, A; Bhuyan, H; Favre, M; Bora, B; Wyndham, E; Chuaqui, H; Mändl, S; Gerlach, J W; Manova, D

    2012-01-01

    Plasma Focus (PF) discharge is a pulsed plasma producing discharge that generates high temperature and high density plasma for a short duration. PF devices are known to emit intense ion beams pulses of characteristic energy in the keV to a few MeV range, in a time scale of tens of nanoseconds. We have previously investigated the ion flux and energy spectrum of ion beams emitted from a low energy PF, operating at 20 kV, with 1.8 kJ stored energy. It was observed that the ion beams have wide range of energy and intensity spectra with a clear angular anisotropy. Due to the wide range of ion energy and intensity spectra PF has become a subject of current interest for its applications in material sciences including surface modification and thin film deposition. The purpose of this study is the formation of titanium nitride (TiN) thin film and to investigate the structural properties of the TiN thin films in terms of PF angular positions. Substrates like Ti and Ti/Si were nitrided in a 1.8 kJ PF device at different angular positions with respect to the PF axis in order to correlate their surface properties with ion beam parameters. Preliminary characterizations of the ion implanted substrates have been conducted, using SEM, EDX and XRD. Our results indicate the formation of nanocrystalline TiN thin film only in certain angular positions. Angular dependency of the surface morphology was observed, which shows that the surface features strongly depends on ion beam energy and flux. With increasing angular positions, a reduction in the deposition rate and the sputter rate is observed. A pronounced nanostructured surface is only observed at the axis of the pinched plasma column, indicating the dominant role of sputtering and perhaps melting and fast re-crystallization of the surface in creating the nanostructures.

  4. Structuring of silicon with low energy focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

  5. Micromachining structured optical fibers using focused ion beam milling

    NARCIS (Netherlands)

    Martelli, C.; Olivero, P.; Canning, J.; Groothoff, N.; Gibson, B.; Huntington, S.

    2007-01-01

    A focused ion beam is used to mill side holes in air-silica structured fibers. By way of example, side holes are introduced in two types of air-structured fiber, (1) a photonic crystal four-ring fiber and (2) a six-hole single-ring step-index structured fiber. © 2007 Optical Society of America.

  6. Charge steering of laser plasma accelerated fast ions in a liquid spray — creation of MeV negative ion and neutral atom beams

    International Nuclear Information System (INIS)

    Schnürer, M.; Abicht, F.; Priebe, G.; Braenzel, J.; Prasad, R.; Borghesi, M.; Andreev, A.; Nickles, P. V.; Jequier, S.; Tikhonchuk, V.; Ter-Avetisyan, S.

    2013-01-01

    The scenario of “electron capture and loss” has been recently proposed for the formation of negative ion and neutral atom beams with up to MeV kinetic energy [S. Ter-Avetisyan, et al., Appl. Phys. Lett. 99, 051501 (2011)]. Validation of these processes and of their generic nature is here provided in experiments where the ion source and the interaction medium have been spatially separated. Fast positive ions accelerated from a laser plasma source are sent through a cold spray where their charge is changed. Such formed neutral atom or negative ion has nearly the same momentum as the original positive ion. Experiments are released for protons, carbon, and oxygen ions and corresponding beams of negative ions and neutral atoms have been obtained. The electron capture and loss phenomenon is confirmed to be the origin of the negative ion and neutral atom beams. The equilibrium ratios of different charge components and cross sections have been measured. Our method is general and allows the creation of beams of neutral atoms and negative ions for different species which inherit the characteristics of the positive ion source

  7. Beam-envelope calculations of space-charge loaded beams in MeV dc ion-implantation facilities

    International Nuclear Information System (INIS)

    Urbanus, W.H.; Bannenberg, J.G.; Doorn, S.; Saris, F.W.; Koudijs, R.; Dubbelman, P.; Koelewijn, W.

    1989-01-01

    MeV dc ion accelerators are being developed that can deliver a beam current up to several hundred micro-amperes. At the low-energy part of the accelerator, the beam transport is space-charge dominated rather than emittance dominated. A system of differential equations has been derived, based on the Kapchinski-Vladimirski equations, which describe the envelope of a space-charge loaded ion beam, taking a longitudinal electrical field in an accelerating tube into account. The equations have been used to design the accelerator of a high-current 1 MV heavy-ion implantation facility. Furthermore, the design of a 2 MV accelerator is presented, which is used for analyzing techniques such as RBS and PIXE. Both facilities are based on single-ended Van de Graaff accelerators. (orig.)

  8. Electrostatic lens to focus an ion beam to uniform density

    International Nuclear Information System (INIS)

    Johnson, C.H.

    1977-01-01

    A focusing lens for an ion beam having a gaussian or similar density profile is described. The lens is constructed to provide an inner zero electrostatic field, and an outer electrostatic field such that ions entering this outer field are deflected by an amount that is a function of their distance from the edge of the inner field. The result is a beam that focuses to uniform density in a manner analogous to that of an optical ring lens. In one embodiment, a conically-shaped network of fine wires is enclosed within a cylindrical anode. The wire net together with the anode produces a voltage field that re-directs the outer particles of the beam while the axial particles pass undeflected through a zero field inside the wire net. The result is a focused beam having a uniform intensity over a given target area and at a given distance from the lens

  9. Development of Superconducting Focusing Quadrupoles for Heavy Ion Drivers

    Energy Technology Data Exchange (ETDEWEB)

    Martovetsky, N; Manahan, R; Lietzke, A F

    2001-09-10

    Heavy Ion Fusion (HIF) is exploring a promising path to a practical inertial-confinement fusion reactor. The associated heavy ion driver will require a large number of focusing quadrupole magnets. A concept for a superconducting quadrupole array, using many simple racetrack coils, was developed at LLNL. Two, single-bore quadrupole prototypes of the same design, with distinctly different conductor, were designed, built, and tested. Both prototypes reached their short sample currents with little or no training. Magnet design, and test results, are presented and discussed.

  10. Tokamak ion temperature and poloidal field diagnostics using 3 MeV protons

    International Nuclear Information System (INIS)

    Heidbrink, W.W.; Strachan, J.D.

    1984-10-01

    The 3 MeV protons created by d(d,p)t fusion reactions in a moderately sized tokamak leave the plasma on trajectories determined by the position of their birth and by the poloidal magnetic field. Pitch-angle resolution of the escaping 3 MeV protons can separately resolve the spatial distribution of the d(d,p)t fusion reactions and the poloidal field distribution inside the tokamak. These diagnostic techniques have been demonstrated on PLT with an array of collimated surface barrier detectors

  11. Portable test bench for the studies concerning ion sources and ion beam extraction and focusing systems

    International Nuclear Information System (INIS)

    Cordero Lopez, F.

    1961-01-01

    A portable test bench is described, which was designed to check ion sources, ion beam extraction and focusing systems before its use in a 600 KeV Cockcroft-Walton accelerator. The vacuum possibilities of the system are specially analyzed in connection with its particular use. The whole can be considered as a portable accelerator of low energy (50 keV). (Author)

  12. Smooth transverse and longitudinal focusing in high-intensity ion linacs

    International Nuclear Information System (INIS)

    Billen, J.H.; Takeda, Harunori; Young, L.M.

    1996-01-01

    We examine ion linac designs that start with a high energy radio- frequency quadrupole (RFQ) followed by either a drift-tube linac (DTL) or a coupled-cavity drift-tube linac (CCDTL). For high energies a conventional CCL follows the CCDTL. High RFQ output energy allows tailoring the transverse and longitudinal focusing strengths to match into the following structure. When the RFQ beam enters a higher frequency structure, the DTL or CCDTL starts with a low accelerating gradient and large negative synchronous phase. The gradient and phase both ramp up gradually to higher values. Other changes later in the machine are also gradual. Beam dynamics simulations show that these linacs require no separate matching sections. Applications include a cw 100 mA H + beam from a 350-MHz, 6.7 MeV RFQ injecting a 700 MHz CCDTL and CCL; a 7% duty 28 mA H - beam from a 402.5 MHz RFQ and DTL injecting 805 MHz structures; a cw 135 mA D + beam produced by a 175 MHz, 8 MeV RFQ and DTL; and a 2.4% duty, 80 mA H + beam using a 433 MHz 10 MeV RFQ and a 1300 MHz CCDTL. The machines take advantage of the considerable flexibility of the CCDTL. Designs can use a variety of different transverse focusing lattices. Use of two coupling cavity orientations permits a constant period even when the number of drift tubes per cavity changes along the linac

  13. Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor

    International Nuclear Information System (INIS)

    Dinesh, C.M.; Ramani; Radhakrishna, M.C.; Dutt, R.N.; Khan, S.A.; Kanjilal, D.

    2008-01-01

    Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 x 10 11 -1.8 x 10 12 ions cm -2 on NPN power transistor. The range (R), electronic energy loss (S e ), nuclear energy loss (S n ), total ionizing dose (TID) and total displacement damage (D d ) in the silicon target are calculated from TRIM Monte Carlo Code. Output resistance is 3.568 x 10 4 Ω for unirradiated device and it increases to 6 x 10 7 Ω as the fluence is increased from 1 x 10 11 to 1.8 x 10 12 ions cm -2 . The capacitance of the emitter-base junction of the transistor decreases and dielectric loss of the emitter-base junction increases with increase in ion fluence. The built in voltage of the unirradiated sample is 0.5 V and it shifts to 0.4 V after irradiation at fluence of 1.8 x 10 12 ions cm -2 and the corresponding doping density reduced to 5.758 x 10 16 cm -3 . The charge carrier removal rate varies linearly with the increase in ion fluence

  14. Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

    International Nuclear Information System (INIS)

    Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

    1982-11-01

    Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

  15. 130 MeV Au ion irradiation induced dewetting on In{sub 2}Te{sub 3} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Matheswaran, P.; Abhirami, K.M.; Gokul, B. [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Sathyamoorthy, R., E-mail: rsathya1959@gmail.com [Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Prakash, Jai [Department of Chemistry, M.M.H. College, Ghaziabad 201001 (India); Asokan, K.; Kanjilal, D. [Materials Science Division, Inter University Accelerator Centre, New Delhi 110067 (India)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer In{sub 2}Te{sub 3} phase formed from In/Te bilayer by 130 MeV Au ion irradiation. Black-Right-Pointing-Pointer Lower fluence results mixed phases with initial state of dewetting. Black-Right-Pointing-Pointer At higher fluence, In{sub 2}Te{sub 3} phase with complete dewetting pattern is formed. Black-Right-Pointing-Pointer Thermal spike model is used to explain the inter face mixing phenomena. Black-Right-Pointing-Pointer SHI irradiation may be used to functionalize the structural and surface properties of thin films. - Abstract: In/Te bilayer thin films were prepared by sequential thermal evaporation and subsequently irradiated by 130 MeV Au ions. The pristine and irradiated samples were characterized by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) techniques. RBS spectra reveal the sputtering of Te film and interface mixing, with increasing fluence. The surface morphology showed the beginning of dewetting of Te thin film and formation of the partially connected with the mixed zones at the fluence of 1 Multiplication-Sign 10{sup 13} ions/cm{sup 2}. At the higher fluence of 3 Multiplication-Sign 10{sup 13} ions/cm{sup 2}, dewetted structures were isolated at the surface. Above results are explained based on the formation of craters, sputtering and dewetting followed by inter-diffusion at the interface of molten zones due to thermal spike induced by Au ions.

  16. Focused ion beam induced deflections of freestanding thin films

    International Nuclear Information System (INIS)

    Kim, Y.-R.; Chen, P.; Aziz, M. J.; Branton, D.; Vlassak, J. J.

    2006-01-01

    Prominent deflections are shown to occur in freestanding silicon nitride thin membranes when exposed to a 50 keV gallium focused ion beam for ion doses between 10 14 and 10 17 ions/cm 2 . Atomic force microscope topographs were used to quantify elevations on the irradiated side and corresponding depressions of comparable magnitude on the back side, thus indicating that what at first appeared to be protrusions are actually the result of membrane deflections. The shape in high-stress silicon nitride is remarkably flat-topped and differs from that in low-stress silicon nitride. Ion beam induced biaxial compressive stress generation, which is a known deformation mechanism for other amorphous materials at higher ion energies, is hypothesized to be the origin of the deflection. A continuum mechanical model based on this assumption convincingly reproduces the profiles for both low-stress and high-stress membranes and provides a family of unusual shapes that can be created by deflection of freestanding thin films under beam irradiation

  17. Focused ion beam patterned Hall nano-sensors

    International Nuclear Information System (INIS)

    Candini, A.; Gazzadi, G.C.; Di Bona, A.; Affronte, M.; Ercolani, D.; Biasiol, G.; Sorba, L.

    2007-01-01

    By means of focused ion beam milling, we fabricate Hall magnetometers with active areas as small as 100x100nm 2 . The constituent material can either be metallic (Au), semimetallic (Bi) or doped bulk semiconducting (Si doped GaAs). We experimentally show that Au nano-probes can work from room temperature down to liquid helium with magnetic flux sensitivity -1 Φ 0

  18. Superconducting focusing quadrupoles for heavy ion fusion experiments

    Energy Technology Data Exchange (ETDEWEB)

    Sabbi, G.L.; Faltens, A.; Leitner, M.; Lietzke, A.; Seidl, P.; Barnard, J.; Lund, S.; Martovetsky, N.; Gung, C.; Minervini, J.; Radovinsky, A.; Schultz, J.; Meinke, R.

    2003-05-01

    The Heavy Ion Fusion (HIF) Program is developing superconducting focusing magnets for both near-term experiments and future driver accelerators. In particular, single bore quadrupoles have been fabricated and tested for use in the High Current Experiment (HCX) at Lawrence Berkeley National Laboratory (LBNL). The next steps involve the development of magnets for the planned Integrated Beam Experiment (IBX) and the fabrication of the first prototype multi-beam focusing arrays for fusion driver accelerators. The status of the magnet R&D program is reported, including experimental requirements, design issues and test results.

  19. TL response of Eu activated LiF nanocubes irradiated by 85 MeV carbon ions

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alharbi, Najlaa D. [Sciences Faculty for Girls, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Lochab, S.P. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-09-01

    Carbon ions were found to be effective for cancer treatment. These heavy ions have a high relative biological effectiveness compared to those of photons. They have higher linear energy transfer and sharper Bragg peak with a very excellent local tumor control. However, the dose of these swift heavy ions needs to be measured with great accuracy. Lithium fluoride (LiF) is a highly sensitive phosphor widely used for radiation dosimetry. In this work Eu activated LiF nanocubes were exposed to 85 MeV C{sup 6+} ion beam and evaluated for their thermoluminescence (TL) response. Pellet forms of this nanomaterial were exposed to these ions in the fluence range 10{sup 9}–10{sup 13} ions/cm{sup 2}. The obtained result shows a prominent TL glow peak at around 320 °C, which is different than that induced by gamma rays. This glow peak exhibits a linear response in the range 10{sup 9}–10{sup 12} ions/cm{sup 2}, corresponding to the equivalent absorbed doses 0.273–273 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The supralinearity function and stopping power in this nanomaterial were also studied. The modification induced in the glow curve structure as a result of changing irradiation type might be utilized to use LiF:Eu nanocubes as a dosimeter for mixed filed radiations. Moreover, the wide linear response of LiF:Eu nanocubes along with the low fading are another imperative results suggesting that this nanomaterial might be a good candidate for carbon ions dosimetry.

  20. TL response of Eu activated LiF nanocubes irradiated by 85 MeV carbon ions

    International Nuclear Information System (INIS)

    Salah, Numan; Alharbi, Najlaa D.; Habib, Sami S.; Lochab, S.P.

    2015-01-01

    Carbon ions were found to be effective for cancer treatment. These heavy ions have a high relative biological effectiveness compared to those of photons. They have higher linear energy transfer and sharper Bragg peak with a very excellent local tumor control. However, the dose of these swift heavy ions needs to be measured with great accuracy. Lithium fluoride (LiF) is a highly sensitive phosphor widely used for radiation dosimetry. In this work Eu activated LiF nanocubes were exposed to 85 MeV C 6+ ion beam and evaluated for their thermoluminescence (TL) response. Pellet forms of this nanomaterial were exposed to these ions in the fluence range 10 9 –10 13 ions/cm 2 . The obtained result shows a prominent TL glow peak at around 320 °C, which is different than that induced by gamma rays. This glow peak exhibits a linear response in the range 10 9 –10 12 ions/cm 2 , corresponding to the equivalent absorbed doses 0.273–273 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The supralinearity function and stopping power in this nanomaterial were also studied. The modification induced in the glow curve structure as a result of changing irradiation type might be utilized to use LiF:Eu nanocubes as a dosimeter for mixed filed radiations. Moreover, the wide linear response of LiF:Eu nanocubes along with the low fading are another imperative results suggesting that this nanomaterial might be a good candidate for carbon ions dosimetry

  1. Physical and chemical changes induced by 70 MeV carbon ions in polyvinylidene difluoride (PVDF) polymer

    International Nuclear Information System (INIS)

    Virk, H.S.; Chandi, P.S.; Srivastava, A.K.

    2001-01-01

    Physical and chemical changes induced by 70 MeV carbon ions ( 12 C 5+ ) have been investigated in bulk polyvinylidene fluoride (PVDF) polymer. The induced changes have been studied with respect to their optical, chemical and structural response using UV-visible, FTIR and XRD techniques. The ion fluences ranging from 2.5x10 11 to 9x10 13 ions cm -2 have been used to study the irradiation effects. It has been observed that at the fluence of 9x10 13 ions cm -2 the PVDF sample became brittle and practically it was not possible to handle it for any further measurements. The recorded UV-visible spectra show that the optical absorption increases with increasing fluence, indicating maximum absorption at 200 nm. An interesting feature of UV-visible spectra is that dips change into peaks and vice versa with increase of fluence. In the FTIR spectra, development of new peaks at 1714 and 3692 cm -1 along with disappearance of peaks at 2363 and 3025 cm -1 and shifting of peak at 2984-2974 cm -1 have been observed due to high energy irradiation, indicating the chemical changes induced by 12 C 5+ . The diffraction pattern of PVDF indicates that this polymer is semi-crystalline in nature; a large decrease in the diffraction intensity indicates decrease in crystallinity. Increase in crystallite size has also been observed due to heavy ion irradiation

  2. Microstructure and Nano-Hardness of 10 MeV Cl-Ion Irradiated T91 Steel

    International Nuclear Information System (INIS)

    Hu Jing; Wang Xianping; Gao Yunxia; Zhuang Zhong; Zhang Tao; Fang Qianfeng; Liu Changsong

    2015-01-01

    Hardening and elemental segregation of T91 martenstic steel irradiated by 10 MeV Cl ions to doses from 0.06 dpa to 0.83 dpa were investigated with the nanoindentation technique and transmission electron microscopy (TEM). The results demonstrated that the irradiation hardening was closely related with irradiation dose. By increasing the dose, the hardness increased rapidly at first from the initial value of 3.15 GPa before irradiation, and then tended to saturate at a value of 3.58 GPa at the highest dose of 0.83 dpa. Combined with TEM observation, the mechanism of hardening was preliminary attributed to the formation of M(Fe,Cr) 2 3C 6 carbides induced by the high energy Cl-ion irradiation. (paper)

  3. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Science.gov (United States)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  4. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  5. Drift Compression and Final Focus Options for Heavy Ion Fusion

    International Nuclear Information System (INIS)

    Hong Qin; Davidson, Ronald C.; Barnard, John J.; Lee, Edward P.

    2005-01-01

    A drift compression and final focus lattice for heavy ion beams should focus the entire beam pulse onto the same focal spot on the target. We show that this requirement implies that the drift compression design needs to satisfy a self-similar symmetry condition. For un-neutralized beams, the Lie symmetry group analysis is applied to the warm-fluid model to systematically derive the self-similar drift compression solutions. For neutralized beams, the 1-D Vlasov equation is solved explicitly, and families of self-similar drift compression solutions are constructed. To compensate for the deviation from the self-similar symmetry condition due to the transverse emittance, four time-dependent magnets are introduced in the upstream of the drift compression such that the entire beam pulse can be focused onto the same focal spot

  6. Charge-state distribution of MeV He ions scattered from the surface atoms

    International Nuclear Information System (INIS)

    Kimura, Kenji; Ohtsuka, Hisashi; Mannami, Michihiko

    1993-01-01

    The charge-state distribution of 500-keV He ions scattered from a SnTe (001) surface has been investigated using a new technique of high-resolution high-energy ion scattering spectroscopy. The observed charge-state distribution of ions scattered from the topmost atomic layer coincides with that of ions scattered from the subsurface region and does not depend on the incident charge state but depends on the exit angle. The observed exit-angle dependence is explained by a model which includes the charge-exchange process with the valence electrons in the tail of the electron distribution at the surface. (author)

  7. Optical fiber plasmonic lens for near-field focusing fabricated through focused ion beam

    Science.gov (United States)

    Sloyan, Karen; Melkonyan, Henrik; Moreira, Paulo; Dahlem, Marcus S.

    2017-02-01

    We report on numerical simulations and fabrication of an optical fiber plasmonic lens for near-field focusing applications. The plasmonic lens consists of an Archimedean spiral structure etched through a 100 nm-thick Au layer on the tip of a single-mode SM600 optical fiber operating at a wavelength of 632:8 nm. Three-dimensional finite-difference time-domain computations show that the relative electric field intensity of the focused spot increases 2:1 times when the number of turns increases from 2 to 12. Furthermore, a reduction of the intensity is observed when the initial inner radius is increased. The optimized plasmonic lens focuses light into a spot with a full-width at half-maximum of 182 nm, beyond the diffraction limit. The lens was fabricated by focused ion beam milling, with a 200nm slit width.

  8. Chemically Induced Phase Transformation in Austenite by Focused Ion Beam

    Science.gov (United States)

    Basa, Adina; Thaulow, Christian; Barnoush, Afrooz

    2014-03-01

    A highly stable austenite phase in a super duplex stainless steel was subjected to a combination of different gallium ion doses at different acceleration voltages. It was shown that contrary to what is expected, an austenite to ferrite phase transformation occurred within the focused ion beam (FIB) milled regions. Chemical analysis of the FIB milled region proved that the gallium implantation preceded the FIB milling. High resolution electron backscatter diffraction analysis also showed that the phase transformation was not followed by the typical shear and plastic deformation expected from the martensitic transformation. On the basis of these observations, it was concluded that the change in the chemical composition of the austenite and the local increase in gallium, which is a ferrite stabilizer, results in the local selective transformation of austenite to ferrite.

  9. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J S; Bardos, R A; Saint, A; Moloney, G M; Legge, G F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1994-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  10. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J.S.; Bardos, R.A.; Saint, A.; Moloney, G.M.; Legge, G.F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1993-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  11. Effect of 120 MeV Ag{sup 9+} ion irradiation of YCOB single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Arun Kumar, R., E-mail: rarunpsgtech@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Department of Basic Sciences - Physics Division, PSG College of Technology, Coimbatore 641 004 (India); Dhanasekaran, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2012-09-15

    Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag{sup 9+} ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 Multiplication-Sign 10{sup 13}, 5 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions/cm{sup 2} fluences at room temperature and with 5 Multiplication-Sign 10{sup 13} ions/cm{sup 2} fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

  12. Heavy ion elastic and quasi-elastic scattering above E/A = 30 MeV

    International Nuclear Information System (INIS)

    Barrette, J.

    1986-05-01

    At high energy, heavy-ion elastic scattering probes the ion-ion potential in a large domain much inside the strong absorption radius. This results in a more precise determination of the real part of the nuclear potential and a consistent picture of its evolution with energy begins to emerge. It is relatively similar to that observed in light ion scattering. Even if the inelastic angular distributions seem to contain less refractive or interior contribution, coupled channel effects from these states are still important at least up to 20 MeV/n. Heavy-ion induced transfer reactions to discrete states have small cross sections but present a very strong selectivity for states with the highest available spin and could thus provide new and interesting spectroscopic information

  13. Doubly coherent production of π- by 3He ions of 910 MeV

    International Nuclear Information System (INIS)

    Aslanides, E.; Fassnacht, P.; Hibou, F.; Chiavassa, E.; Dellacasa, G.; Gallio, M.; Musso, A.; Bressani, T.; Puddu, G.

    1979-01-01

    The inclusive pion spectrum from the reaction 3 He+ 6 Li → π - +X at 910 MeV was measured at 0 0 with moderate resolution up to the kinematic limit of the two-body final-state reaction. A first analysis shows that the production of high-energy pions cannot be explained by the NN → NNπ process using conventional nucleon momentum distributions. At the end of the spectrum a clear deviation from the general falloff slope is observed and attributed to the doubly coherent reaction 3 He+ 6 Li → 9 C+π -

  14. Ion heating up to 1 MeV range with higher harmonic ICRF wave on JT-60U

    International Nuclear Information System (INIS)

    Nemoto, M.; Kusama, Y.; Hamamatsu, K.; Kimura, H.; Fujii, T.; Moriyama, S.; Saigusa, M.; Afanassiev, V.I.

    1997-01-01

    The properties of protons under accleration by an ion cyclotron range of frequency (ICRF) waves with the second to fourth hydrogen harmonics have been investigated in the JT-60U tokamak at the Japan Atomic Energy Research Institute (JAERI). Protons have been accelerated up to 1 MeV in the presence of an ICRF wave of fixed frequency, neutral beams (NB), and a fixed toroidal magnetic field which is scanned through several plasma discharges. The tail temperature of the protons, which is evaluated in the range 0.32-0.86 MeV, has been observed to increase in the second to third harmonics, however increase of the tail temperature in the third to fourth harmonics has not been observed clearly. Furthermore, the dependence of tail temperature on the harmonic number has been found to be in qualitative agreement with results from a simulation code analysis based upon the one-dimensional Fokker-Planck equation coupled with the kinetic wave equation. Experimental values for the stored energy of the accelerated ions have shown, however, that the response of stored energy to changes in absorbed ICRF power is much stronger than the response to changes in harmonic number. Also, the incremental energy confinement times for heating discharges matching the third and fourth harmonics (3 ω CH) and 4 ω CH) of hydrogen have been observed to be less than half that for those matching the second harmonic. It has been found that suppression of the absorbed ICRF power accompanied with the occurence of cavity resonance in the 3ω CH and 4ω CH heating discharges reduces the stored energy of the accelerated ions and the incremental energy confinement time. (Author)

  15. Optical fiber sensors fabricated by the focused ion beam technique

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Wang, Fei; Bang, Ole

    2012-01-01

    crystal fiber (PCF). Using this technique we fabricate a highly compact fiber-optic Fabry-Pérot (FP) refractive index sensor near the tip of fiber taper, and a highly sensitive in-line temperature sensor in PCF. We also demonstrate the potential of using FIB to selectively fill functional fluid......Focused ion beam (FIB) is a highly versatile technique which helps to enable next generation of lab-on-fiber sensor technologies. In this paper, we demonstrate the use application of FIB to precisely mill the fiber taper and end facet of both conventional single mode fiber (SMF) and photonic...

  16. In situ hydride formation in titanium during focused ion milling.

    Science.gov (United States)

    Ding, Rengen; Jones, Ian P

    2011-01-01

    It is well known that titanium and its alloys are sensitive to electrolytes and thus hydrides are commonly observed in electropolished foils. In this study, focused ion beam (FIB) milling was used to prepare thin foils of titanium and its alloys for transmission electron microscopy. The results show the following: (i) titanium hydrides were observed in pure titanium, (ii) the preparation of a bulk sample in water or acid solution resulted in the formation of more hydrides and (iii) FIB milling aids the precipitation of hydrides, but there were never any hydrides in Ti64 and Ti5553.

  17. Fundamental limits to imaging resolution for focused ion beams

    International Nuclear Information System (INIS)

    Orloff, J.; Swanson, L.W.; Utlaut, M.

    1996-01-01

    This article investigates the limitations on the formation of focused ion beam images from secondary electrons. We use the notion of the information content of an image to account for the effects of resolution, contrast, and signal-to-noise ratio and show that there is a competition between the rate at which small features are sputtered away by the primary beam and the rate of collection of secondary electrons. We find that for small features, sputtering is the limit to imaging resolution, and that for extended small features (e.g., layered structures), rearrangement, redeposition, and differential sputtering rates may limit the resolution in some cases. copyright 1996 American Vacuum Society

  18. Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ Ions

    Science.gov (United States)

    Garcia, M. A.; Rickards, J.; Cuerno, R.; Trejo-Luna, R.; Cañetas-Ortega, J.; de la Vega, L. R.; Rodríguez-Fernández, L.

    2017-12-01

    Ion implantation is known to enhance the mechanical properties of biomaterials such as, e.g., the wear resistance of orthopedic joints. Increasing the surface area of implants may likewise improve their integration with, e.g., bone tissue, which requires surface features with sizes in the micron range. Ion implantation of biocompatible metals has recently been demonstrated to induce surface ripples with wavelengths of a few microns. However, the physical mechanisms controlling the formation and characteristics of these patterns are yet to be understood. We bombard Ti and Ti-6Al-4V surfaces with 1.0-MeV Au+ ions. Analysis by scanning electron and atomic force microscopies shows the formation of surface ripples with typical dimensions in the micron range, with potential indeed for biomedical applications. Under the present specific experimental conditions, the ripple properties are seen to strongly depend on the fluence of the implanted ions while being weakly dependent on the target material. Moreover, by examining experiments performed for incidence angle values θ =8 ° , 23°, 49°, and 67°, we confirm the existence of a threshold incidence angle for (ripple) pattern formation. Surface indentation is also used to study surface features under additional values of θ , agreeing with our single-angle experiments. All properties of the surface structuring process are very similar to those found in the production of surface nanopatterns under low-energy ion bombardment of semiconductor targets, in which the stopping power is dominated by nuclear contributions, as in our experiments. We consider a continuum model that combines the effects of various physical processes as originally developed in that context, with parameters that we estimate under a binary-collision approximation. Notably, reasonable agreement with our experimental observations is achieved, even under our high-energy conditions. Accordingly, in our system, ripple formation is determined by mass

  19. Simulation of the channelling of ions from MeV C60 in crystalline solids

    International Nuclear Information System (INIS)

    Fetterman, A; Sinclair, L; Tanushev, N; Tombrello, T; Nardi, E

    2007-01-01

    Simulations were performed describing the motion and breakup of energetic C 60 ions interacting with crystalline targets. A hybrid algorithm was used that employs a binary collision model for the scattering of the carbon ions by the atoms of the solid, and molecular dynamics for the Coulomb interactions of the 60 carbon ions with one another. For the case of yttrium iron garnet (YIG), directions such as [1 1 0], [1 0 0], [0 1 0] and [0 0 1] demonstrate channelling for a large fraction of the C ions. For directions such as [1 1 1], [2 1 1] and [7 5 3] the trajectories show no more channelling than for random directions. The effects of tilt, shielding and wake-field interactions were investigated for YIG and α-quartz

  20. Initial results from the Wisconsin Spherically Convergent Ion Focus experiment

    International Nuclear Information System (INIS)

    Thorson, T.A.; Durst, R.D.; Fonck, R.J.; Foucher, B.S.; Wainwright, L.P.

    1995-01-01

    The Spherically Convergent Ion Focus (SCIF) is an alternative plasma confinement scheme in which ions are electrostatically confined, accelerated, and concentrated at fusion-relevant energies. This concept has been recently promoted for various near-term applications including waste disposal, particle production, neutron radiography and tomography, plastic explosive detection, materials research, and medical isotope production. The Wisconsin SCIF experiments are designed to evaluate the practicality of the SCIF concept for given applications. In the experiment, a wire globe serves as a simple means of producing the trapping potential well and the ion source consists of a cold, uniform plasma at the edge. Hydrogen ions formed from the background neutral gas are typically accelerated to energies of 5--20 kV, and measured cathode grid currents approach the space-charge limit for concentric spheres. Core size measurements utilize spectrally-filtered CCD camera images of the visible emission from the core region, and the minimal observed core radius of 0.6 cm (HWHM) is within a factor of 2--3 of the theoretical convergence ratio for the device. Neutral particle interactions and potential asymmetries imposed by the grid lead to non-ideal convergence, as evidenced by measured potential asymmetries and core size dependence on cathode grid spacing. Floating probes with 30 kV isolation have allowed unique measurements of the density, electric potential and temperature in the converged core. The ratio of core to edge density is 10--20, which is in good agreement with scaling from radial flux conservation

  1. Radiation-induced effects in MgO single crystal by 200 keV and 1 MeV Ni ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Ryohei; Nakai, Yoshihiro; Hamaguchi, Dai [Kyoto Inst. of Tech. (Japan); and others

    1997-03-01

    MgO(100) single crystals were implanted with 1.0 MeV and 200 keV Ni ions between 10{sup 15} and 10{sup 17} ions/cm{sup 2} at room temperature. Before and after thermal annealing the radiation damage and the lattice location of implanted Ni ions were analyzed by using Rutherford backscattering spectrometry with channeling and optical absorption measurements. For 1.0 MeV Ni ions, the disorder of Mg atoms increased slowly with ion dose near surface region, while it increased sharply and saturated with ion dose from 2x10{sup 16} ions/cm{sup 2} near ion range. The radiation damage was recovered and implanted Ni ions diffused to the whole of crystal and occupied substitutional positions after 1400degC annealing. For 200 keV Ni ions, the disorder of Mg atoms increased with dose near ion range and had a maximum at about 5x10{sup 16} ions/cm{sup 2}. This tendency agrees with the behavior of color centers obtained from optical measurements. For thermal annealing the radiation damage did not change during 500degC annealing, but the aggregate centers appeared after 300degC annealing. (author)

  2. Focused ion beam analysis of banana peel and its application for arsenate ion removal

    International Nuclear Information System (INIS)

    Memon, J.R.

    2015-01-01

    Banana peel, a common fruit waste, has been investigated for its ability to remove arsenate ions from ground water as a function of pH, contact time, and initial metal ion concentration. Focused ion beam (FIB) analysis revealed the internal morphology of the banana peels. Arsenate ions were entered into micropores of banana peel. pH was seen to have no effect on the sorption process. Retained species were eluted using 5 mL of 2 M H/sub 2/SO/sub 4/. The kinetics of sorption were observed to follow the pseudo first order rate equation. The sorption data followed Freundlich and D-R isotherms. The energy value obtained from the D-R isotherms indicated that the sorption was physical in nature for arsenate species. Our study has shown that banana peel has the ability to remove arsenate species from ground water samples. (author)

  3. Focused Ion Beam Analysis of Banana Peel and Its Application for Arsenate Ion Removal

    Directory of Open Access Journals (Sweden)

    Jamil R. Memon

    2015-06-01

    Full Text Available Banana peel, a common fruit waste, has been investigated for its ability to remove arsenate ions from ground water as a function of pH, contact time, and initial metal ion concentration. Focused ion beam (FIB analysis revealed the internal morphology of the banana peels. Arsenate ions were entered into micropores of banana peel. pH was seen to have no effect on the sorption process. Retained species were eluted using 5 mL of 2 M H2SO4. The kinetics of sorption were observed to follow the pseudo first order rate equation. The sorption data followed Freundlich and D-R isotherms. The energy value obtained from the D-R isotherms indicated that the sorption was physical in nature for arsenate species. Our study has shown that banana peel has the ability to remove arsenate species from ground water samples.

  4. Polypropylene compositional evolution under 3.5 MeV He{sup +} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Abdesselam, M., E-mail: abdesselam_m@yahoo.fr [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Muller, D. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France); Djebara, M.; Chami, A.C. [Faculte de Physique, USTHB, BP32, El Alia, 16111 BEZ (Algeria); Montgomery, P. [InESS, UMR7163, 23 rue du Loess, BP20, F-67037 Strasbourg Cedex 02 (France)

    2012-05-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 {mu}m in thickness. The fluence ranges from 2 Multiplication-Sign 10{sup 12} to 3.5 Multiplication-Sign 10{sup 15} cm{sup -2}. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C({alpha}, {alpha})C) and hydrogen elastic recoil detection (H({alpha}, H){alpha}), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of {approx}5 Multiplication-Sign 10{sup 13} He{sup +} cm{sup -2}. The carbon depletion levels off at a fluence of {approx}5 Multiplication-Sign 10{sup 14} He{sup +} cm{sup -2} approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 Multiplication-Sign 10{sup -16} cm{sup 2}, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He{sup +} beam is made.

  5. Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

    International Nuclear Information System (INIS)

    Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A.C.; Montgomery, P.

    2012-01-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 10 12 to 3.5 × 10 15 cm −2 . The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ∼5 × 10 13 He + cm −2 . The carbon depletion levels off at a fluence of ∼5 × 10 14 He + cm −2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10 −16 cm 2 , respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He + beam is made.

  6. Polypropylene compositional evolution under 3.5 MeV He+ ion irradiation

    Science.gov (United States)

    Abdesselam, M.; Muller, D.; Djebara, M.; Chami, A. C.; Montgomery, P.

    2012-05-01

    A helium beam at 3.5 MeV was used to induce damage in thin polypropylene film of 5.1 μm in thickness. The fluence ranges from 2 × 1012 to 3.5 × 1015 cm-2. The evolution of the atomic composition (C and H) as a function of the fluence was investigated in situ by forward elastic scattering (C(α, α)C) and hydrogen elastic recoil detection (H(α, H)α), respectively. The helium beam was used at the same time for irradiation and analysis. In respect to the high sensitivity of the polypropylene to radiation damage, the beam current was kept at very low intensity of 0.5 nA. The mass loss becomes significant above a fluence of ˜5 × 1013 He+ cm-2. The carbon depletion levels off at a fluence of ˜5 × 1014 He+ cm-2 approximately while hydrogen loss continues to be present along the whole of the studied fluence range. The final carbon and hydrogen losses, at the highest fluence, are around 17% and 48% of their initial contents, respectively. Satisfactory fits to the release curves have been obtained in the framework of the bulk molecular recombination model (BMR). The deduced hydrogen and carbon release cross sections are 7.8 and 65.2 × 10-16 cm2, respectively. A comparison with our previous measurements of polyethylene terephthalate (PET) film irradiated with 3.7 MeV He+ beam is made.

  7. Effect of 100 MeV swift heavy ions [silver (Ag8+)] on morphological and electrical properties of polypyrrole

    Science.gov (United States)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D. K.

    2009-10-01

    Polypyrrole (PPY) films were prepared by the electrochemical polymerization technique. The fully undoped samples were irradiated with different fluences ranging from 1010 to 1012 ions/cm2 of 100 MeV silver (Ag8+) ions. In order to explain the effect of these radiations, a comparative study of samples before and after irradiation was performed by using various techniques such as surface electron microscopy, atomic force microscopy, and X-ray diffraction. With an increase in fluence, the surface structure of PPY films becomes smoother, and the conductivity increases by two orders, which has been explained in light of reordering of polymer chains. The temperature dependence of the dc conductivity of irradiated as well as unirradiated samples has been investigated at 77-300 K. The charge transport properties before and after irradiation are retained although conductivity increases. It has been proposed that swift heavy ion irradiation affects the interchain conductivity. The conductivity of irradiated samples is stable under atmospheric conditions for more than 9 months. The present investigations open up the scope for the applicability of irradiated conducting polymers as microstructures with defined conductivity for sensor applications.

  8. Effect of 100 MeV swift heavy ions [silver (Ag8+)] on morphological and electrical properties of polypyrrole

    International Nuclear Information System (INIS)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D. K.

    2009-01-01

    Polypyrrole (PPY) films were prepared by the electrochemical polymerization technique. The fully undoped samples were irradiated with different fluences ranging from 10 10 to 10 12 ions/cm 2 of 100 MeV silver (Ag 8+ ) ions. In order to explain the effect of these radiations, a comparative study of samples before and after irradiation was performed by using various techniques such as surface electron microscopy, atomic force microscopy, and X-ray diffraction. With an increase in fluence, the surface structure of PPY films becomes smoother, and the conductivity increases by two orders, which has been explained in light of reordering of polymer chains. The temperature dependence of the dc conductivity of irradiated as well as unirradiated samples has been investigated at 77-300 K. The charge transport properties before and after irradiation are retained although conductivity increases. It has been proposed that swift heavy ion irradiation affects the interchain conductivity. The conductivity of irradiated samples is stable under atmospheric conditions for more than 9 months. The present investigations open up the scope for the applicability of irradiated conducting polymers as microstructures with defined conductivity for sensor applications.

  9. 125 MeV Si 9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

    Science.gov (United States)

    Elayaraja, K.; Joshy, M. I. Ahymah; Suganthi, R. V.; Kalkura, S. Narayana; Palanichamy, M.; Ashok, M.; Sivakumar, V. V.; Kulriya, P. K.; Sulania, I.; Kanjilal, D.; Asokan, K.

    2011-01-01

    Titanium substrate was coated with hydroxyapatite by radiofrequency magnetron sputtering (rf-magnetron sputtering) technique and subjected to swift heavy ion (SHI) irradiation of 125 MeV with Si 9+ at fluences of 1 × 10 10, 1 × 10 11 and 1 × 10 12 ions/cm 2. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed the HAp phase of the irradiated film. There was a considerable decrease in crystallinity and particle size after irradiation. In addition, DRS-UV reflectance spectra revealed a decrease in optical band gap ( Eg) from 5.2 to 4.6 eV. Wettability of biocompatible materials plays an important role in biological cells proliferation for tissue engineering, drug delivery, gene transfer and bone growth. HAp thin films irradiated with 1 × 10 11 ions/cm 2 fluence showed significant increase in wettability. While the SHI irradiated samples exhibited enhanced bioactivity, there was no significant variation in cell viability. Surface roughness, pores and average particle size were analyzed by atomic force microscopy (AFM).

  10. Three-dimensional recoil-ion momentum analyses in 8.7 MeV O7+-He collisions

    International Nuclear Information System (INIS)

    Kambara, T.; Tang, J.Z.; Awaya, Y.

    1995-01-01

    Using high-resolution recoil-ion momentum spectroscopy we have measured the differential cross sections of single-electron capture and target single-ionization processes for 8.7 MeV O 7+ -He collisions as functions of scattering angle. A transverse momentum resolution of ±0.2 au, which corresponds to an angular resolution of about ±1.5x10 -6 rad for the projectile scattering angle, was obtained by intersecting a well collimated O 7+ beam with a target of a supersonic He jet from a pre-cooled gas and by measuring the recoil-ion transverse momentum. For the single capture reaction, information on the n-value of the electron final state in O 6+ (1snl) is obtained from the longitudinal momentum of the recoil ions. In pure single-electron capture, the dominant contributions to capture were found to be those from the n=4 and higher states, whereas single capture accompanied by the ionization of the second target electron mainly populates n=2 to n=4 states. Furthermore, the measured transverse momentum distribution differs significantly between pure single capture and capture with simultaneous ionization. The measured data for the pure capture process compare favourably with theoretical results based on a molecular-state expansion method. Other experimental data are discussed in terms of the classical overbarrier model. (author)

  11. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  12. Augmentation of thermoelectric performance of VO2 thin films irradiated by 200 MeV Ag9+-ions

    International Nuclear Information System (INIS)

    Khan, G.R.; Kandasami, A.; Bhat, B.A.

    2016-01-01

    Swift Heavy Ion (SHI) irradiation with 200 MeV Ag 9+ -ion beam at ion fluences of 1E11, 5E11, 1E12, and 5E12 for tuning of electrical transport properties of VO 2 thin films fabricated by so–gel technique on alumina substrates has been demonstrated in the present paper. The point defects created by SHI irradiation modulate metal to insulator phase transition temperature, carrier concentration, carrier mobility, electrical conductivity, and Seebeck coefficient of VO 2 thin films. The structural properties of the films were characterized by XRD and Raman spectroscopy and crystallite size was found to decrease upon irradiation. The atomic force microscopy revealed that the surface roughness of specimens first decreased and then increased with increasing fluence. Both resistance as well as Seebeck coefficient measurements demonstrated that all the samples exhibit metal–insulator phase transition and the transition temperatures decreases with increasing fluence. Hall effect measurements exhibited that carrier concentration increased continuously with increasing fluence which resulted in an increase of electrical conductivity by several orders of magnitude in the insulating phase. Seebeck coefficient in insulating phase remained almost constant in spite of an increase in the electrical conductivity by several orders of magnitude making SHI irradiation an alternative stratagem for augmentation of thermoelectric performance of the materials. The carrier mobility at room temperature decreased up to the beam fluence of 5E11 and then started increasing whereas Seebeck coefficient in metallic state first increased with increasing ion beam fluence up to 5E11 and thereafter decreased. Variation of these electrical transport parameters has been explained in detail. - Highlights: • Thermoelectric properties of VO 2 thin films enhance upon SHI irradiation. • Structural properties show that crystallite size decrease upon SHI irradiation. • Metal–insulator phase

  13. QMD simulation of multifragment production in heavy ion collisions at E/A=600 MeV

    International Nuclear Information System (INIS)

    Begemann-Blaich, M.; Mueller, W.F.J.; Aichelin, J.; Hubele, J.; Imme, G.; Leray, S.; Lindenstruth, V.; Liu, Z.; Lynen, U.; Meijer, R.J.; Milkau, U.; Moroni, A.; Ogilvie, C.A.; Pochodzalla, J.; Raciti, G.; Schuettauf, A.; Stuttge, L.; Tucholski, A.

    1993-04-01

    With the ALADIN forward spectrometer the fragmentation of gold nuclei at 600 MeV per nucleon after interaction with carbon, aluminum, copper and lead targets has been investigated. The results are compared to quantum-molecular-dynamics calculations using soft and hard equations of state as well as soft equation of state with momentum dependent forces. Whereas the QMD has been successfully applied to heavy ion collisions at lower energies, it is not possible to reproduce the fragment distributions and the light particle multiplicities observed in this experiment at relativistic energies. To study the reasons for the discrepancy between the experimental data and the simulations, we investigated the time evolution of the nuclear system after a collision and the disintegration pattern of excited nuclei in the QMD approach. (orig.). 9 figs

  14. Coincidence measurements of slow recoil ions with projectile ions in 42-MeV Arq+-Ar collisions

    International Nuclear Information System (INIS)

    Tonuma, T.; Kumagai, H.; Matsuo, T.; Tawara, H.

    1989-01-01

    Slow Ar recoil-ion production cross sections by projectiles of 1.05-MeV/amu Ar q+ (q=4,6,8,10,12,14) were measured using a projectile-ion--recoil-ion coincidence technique. The present results indicate that the average recoil ion charges left-angle i right-angle increase with increasing the incident projectile charge q and the number of the lost and captured electrons from and/or into projectiles, whereas the projectile charge-changing cross sections for loss ionization decrease steeply with increasing q for low-charge-state projectiles, and those for transfer ionization increase rapidly with increasing q for high-charge-state projectiles. For Ar projectiles with q=10, which corresponds to the equilibrium charge state of Ar projectiles at the present collision energy, the average recoil-ion charges are nearly the same in both loss and transfer ionization, and a pure ionization process plays a much more important role in producing highly charged recoil ions, in contrast to projectile electron loss or transfer processes, which play a role in other projectile charge states

  15. Focused ion beam structuring of low melting polymeric materials

    International Nuclear Information System (INIS)

    Schmied, R.

    2014-01-01

    This thesis focuses on heating effects during focused ion beam (FIB) processing of low melting polymers. The combined approach using experiments and simulations identifies the in part massive local temperatures as a convolution between intrinsic ion-matter effects and a considerable, technically-induced heating component. While the former is invariable, the latter has been minimized by an alternative process strategy which massively improves the morphological stability and minimizes chemical damage during FIB processing, thus opening new possibilities for application on sensitive, low melting materials. The study starts with systematic experimental investigations which strongly suggested the existence of a technically-induced heating component as a consequence of classically-used serpentine or raster-like patterning strategies. Based on these results, a combined simulation approach of ion trajectories and thermal spike model calculations have been employed to get a deeper insight into spatial and temporal temperature evolution. The results were then combined with the thermodynamic behavior of polymers by means of melting and volatizing temperatures. The comparison of these simulationbased predictions with real FIB experiments revealed very good agreement, proving the applicability of the approach used to describe the temperature evolution from a fundamental point of view. As a next step, these simulations were then applied to the dierent scanning strategies which further con rmed the existence of a technically-induced heating component via classically-used patterning approaches. Due to the deep insight gained via simulations, an alternative patterning strategy was developed, which was expected to minimize these avoidable influences. This new strategy was then evaluated using a multi-technique approach, which revealed strongly reduced chemical damage together with increasing morphological stabilities even for temperature-sensitive polymers. Finally, this alternative

  16. Fundamentals and applications of heavy ion collisions below 10 MeV/ nucleon energies

    CERN Document Server

    Prasad, R

    2018-01-01

    An up-to-date text, covering the concept of incomplete fusion (ICF) in heavy ion (HI) interactions at energies below 10 MeV/nucleon. Important concepts including the exciton model, the Harp Miller and Berne model, Hybrid model, Sum rule model, Hot spot model and promptly emitted particles model are covered in depth. It studies the ICF and PE-emission in heavy ion reactions at low energies using off-beam and in-beam experimental techniques. Theories of complete fusion (CF) of heavy ions based on Compound Nucleus (CN) mechanism of statistical nuclear reactions, details of the Computer code PACE4 based on CN mechanism, pre-equilibrium (PE) emission, modeling of (ICF) and their limits of application are discussed in detail.

  17. Measurement of omega, the energy required to create an ion pair, for 150-MeV protons in nitrogen and argon

    International Nuclear Information System (INIS)

    Petti, P.L.

    1985-01-01

    The purpose of this thesis is to provide a 1% measurement of omega, the energy required to produce an ion pair, for 150 MeV protons in various gases. Such a measurement should improve the accuracy of proton ionization chamber dosimetry at the Harvard Cyclotron Laboratory. Currently, no measurements of omega exist in the energy range of 30 to 150 MeV, and present ionization chamber dosimetry at the Cyclotron relies on average values of measurements at lower and higher energies (i.e. for E < 3 MeV and E = 340 MeV). Contrary to theoretical expectations, these low and high energy data differ by as much as 9% in some gases. The results of this investigation demonstrate that the existing high energy data is probably in error, and current proton ionization chamber dosimetry underestimates omega, and hence the proton dose, by 5%

  18. Effect of 50 and 80 MeV phosphorous ions on the contribution of interface and oxide state density in n-channel MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S.; Dhole, S.D.; Kanjilal, D.; Bhoraskar, V.N. E-mail: vnb@physics.unipune.ernet.in

    1999-07-02

    n-channel depletion MOS devices were irradiated with 50 and 80 MeV phosphorous ions, with different fluences varying in the range from 10{sup 11} to 10{sup 13} ions/cm{sup 2}. The pre and post irradiation I-V characteristics were measured and the corresponding threshold shift {delta}V{sub TH} was estimated. In both the cases, the drain current I{sub D} and the threshold voltage V{sub TH} were found to decrease with the ion fluence. The increase in the threshold voltage shift {delta}V{sub TH} with the ion fluence, was greater for the devices irradiated with 80 MeV ions than those irradiated with 50 MeV ions. The interface and oxide state densities were determined through the subthreshold voltage measurements. To separate the contributions of oxide and interface states towards the threshold voltage shift, the ion irradiated MOS devices were annealed at 150 deg. C. The threshold shift during annealing initially decreased and later increased with increasing annealing period. The rate of change of the interface states during annealing was higher than that of the oxide states. It was also found that depletion mode (normally ON) MOSFETs switched operation to enhancement mode (normally OFF)

  19. Focused Ion Beam Nanopatterning for Carbon Nanotube Ropes Based Sensor

    Directory of Open Access Journals (Sweden)

    Vera LA FERRARA

    2007-11-01

    Full Text Available Focused Ion Beam (FIB technology has been used to realize electrode patterns for contacting Single Walled Carbon Nanotubes (SWCNTs ropes for chemical gas sensor applications. Two types of transducers, based on a single rope and on bundles, have been realized starting from silicon/Si3N4 substrate. Electrical behaviour, at room temperature, in toxic gas environments, has been investigated and compared to evaluate contribution of a single rope based sensor respect to bundles one. For all the devices, upon exposure to NO2 and NH3, the conductance has been found to increase or decrease respectively. Conductance signal is stronger for sensor based on bundles, but it also evident that response time in NO2 is faster for device based on a single rope. FIB technology offers, then, the possibility to contact easily a single sensitive nanowire, as carbon nanotube rope.

  20. Beam focusing by aperture displacement in multiampere ion sources

    International Nuclear Information System (INIS)

    Stewart, L.D.; Kim, J.; Matsuda, S.

    1975-05-01

    Results are given of an experimental study of beam focusing by aperture displacement (Δx) in duoPIGatron ion sources. Measurements with a single aperture, accel-decel electrode geometry show that the beam deflection angle is linear with Δx/z for the round aperture and with Δx/z* 2 for the slit aperture where z and z* are respectively the extraction gap distance and the effective gap distance. Applying the result of the single aperture study to the multiaperture, duoPIGatron sources, it was possible to increase the neutral beam injection power to the ORMAK plasma by approximately 40 percent. Also presented are discussion and comparison of other work on the effect of aperture displacement on beam deflection. (U.S.)

  1. Introduction to focused ion beams instrumentation, theory, techniques and practice

    CERN Document Server

    Giannuzzi, Lucille A

    2005-01-01

    The focused ion beam (FIB) instrument has experienced an intensive period of maturation since its inception. Numerous new techniques and applications have been brought to fruition, and over the past few years, the FIB has gained acceptance as more than just an expensive sample preparation tool. It has taken its place among the suite of other instruments commonly available in analytical and forensic laboratories, universities, geological, medical and biological research institutions, and manufacturing plants. Although the utility of the FIB is not limited to the preparation of specimens for subsequent analysis by other analytical techniques, it has revolutionized the area of TEM specimen preparation. The FIB has also been used to prepare samples for numerous other analytical techniques, and offers a wide range of other capabilities. While the mainstream of FIB usage remains within the semiconductor industry, FIB usage has expanded to applications in metallurgy, ceramics, composites, polymers, geology, art, bio...

  2. Experimental study of the slowing down of heavy ions at 20 to 100 MeV per nucleon in matter

    International Nuclear Information System (INIS)

    Herault, J.

    1988-01-01

    The measurements of typical parameters on heavy ions penetration through matter presented in this work have been performed at the GANIL accelerator facility, using the LISE magnetic spectrometer from 20 to 100 MeV per nucleon. Two magnetic optical configurations of the spectrometer LISE corresponding respectively to energy and angle analysis, have been used. In the first configuration, the analysis of the energy loss distribution, caused by the interaction of the heavy ions beam with the target material, permit to determine the stopping power and the energy straggling. The stopping power is defined experimentally by the ratio of the average energy loss in the target to the thickness of this one. This quantity has been measured for a set of heavy ions ( 17 O, 40 Ar, 86 Kr and 132 Xe) in gaseous media (H 2 , He, N 2 , Ne, Ar, Kr, Xe, CH 4 , C 4 H 10 , CO 2 and CF 4 ) and compared to semi-empirical tabulations. These determinations are compared to those obtained in solid media to study the evolution of the solid-gas difference. This effect vanishes progressively when the projectile tends to be totally stripped (the charge state becomes identical to the atomic number). The heavy ion energy distributions at the exit of degraders and particularly their full width at half maximum have been measured for various projectiles ( 16 O, 40 Ar, 84 Kr, 86 Kr, 100 Mo and 132 Xe) in solid (Be, C, Al, Si, Ti, Ni, Cu, Ag, Ta, Au and Mylar) and gaseous media (the same as for stopping power determinations). A significant contribution of charge exchange straggling to the energy loss straggling is observed for partially stripped ions. A second optical configuration of the beam line LISE has been used, to obtain an image of heavy ions beams passing through targets for various heavy ions ( 16 O, 17 O, 40 Ar, 86 Kr and 100 Mo) in gaseous and solid media. The scaling law for angular straggling is confirmed and extended over five orders of magnitude [fr

  3. 160 MeV Ni12+ ion irradiation effects on the structural, optical and electrical properties of spherical polypyrrole nanoparticles

    International Nuclear Information System (INIS)

    Hazarika, J.; Kumar, A.

    2014-01-01

    Highlights: • Upon SHI irradiation the average diameters of PPy nanoparticles increases. • Crystallinity of PPy nanoparticles increases with increasing ion fluence. • IR active vibrational bands have different cross sections for SHI irradiation. • Upon SHI irradiation optical band gap energy of PPy nanoparticles decreases. • Upon SHI irradiation thermal stability of PPy nanoparticles increases. -- Abstract: In this study we report 160 MeV Ni 12+ swift heavy ion irradiation induced enhancement in the structural, optical and electrical properties of spherical polypyrrole (PPy) nanoparticles. High resolution transmission electron microscope results show that the pristine PPy nanoparticles have an average diameter of 11 nm while upon irradiation the average diameter increases to 18 nm at the highest ion fluence of 1 × 10 12 ions/cm 2 . X-ray diffraction studies show an enhancement of crystallinity and average crystallite size of PPy nanoparticles with increasing fluence. Studies of Fourier transform infrared spectra suggest the structural modifications of different functional groups upon irradiation. It also reveals that different functional groups have different sensitivity to irradiation. The infrared active N–H vibrational band at 3695 cm −1 is more sensitive to irradiation with a formation cross-section of 5.77 × 10 −13 cm 2 and effective radius of 4.28 nm. The UV–visible absorption spectra of PPy nanoparticles show that the absorption band undergoes a red shift with increasing fluence. Moreover upon irradiation the optical band gap energy decreases and Urbach’s energy increases with fluence. Thermo-gravimetric analysis studies suggest that upon irradiation the thermal stability of PPy nanoparticles increases which may be attributed to their enhanced crystallinity. Current–voltage characteristics of PPy nanoparticles exhibit non-Ohmic, symmetric behavior which increases with fluence

  4. 160 MeV Ni{sup 12+} ion irradiation effects on the dielectric properties of polyaniline nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Hazarika, J.; Nath, Chandrani [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784028, Assam (India); Kumar, A., E-mail: ask@tezu.ernet.in [Materials Research Laboratory, Department of Physics, Tezpur University, Tezpur 784028, Assam (India)

    2012-10-01

    We report on the dielectric properties and a.c. conductivity studies of CSA doped polyaniline nanotubes. Nanotubes of 47-100 nm diameter, were synthesized by the self-assembly method and irradiated using Ni{sup 12+} ions of 160 MeV energy with fluences of 1 Multiplication-Sign 10{sup 10}, 5 Multiplication-Sign 10{sup 10}, 1 Multiplication-Sign 10{sup 11} and 3 Multiplication-Sign 10{sup 11} ions/cm{sup 2}. X-ray diffraction studies reveal an increase in the degree of crystallinity and consequently, the extent of order of the nanotubes with increasing fluence, but show a lower degree of crystallinity at higher fluence. The decrease in d-spacing for the (100) reflections with fluence is ascribed to the decrease in the tilt angle of the aligned polymer chains. A significant change was seen after irradiation in dielectric and electrical properties which may be correlated with the increased carrier concentration and structural modifications in the polymer films. The surface conductivity of films increases with increasing fluence, which also decreases at higher fluence. The a.c. conduction mechanism for the nanotubes could be explained in terms of correlated barrier hopping model. The existence of polarons as the major charge carriers in the present nanotube system was confirmed by the low values of polaron binding energy, found to decrease with fluence. The hopping distance increases with fluence indicating that the hopping probability increases with fluence.

  5. MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

    2016-12-15

    The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Focused ion beam damage to MOS integrated circuits

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Campbell, Ann N.; Hembree, Charles E.; Tangyunyong, Paiboon; Jessing, Jeffrey R.; Soden, Jerry M.

    2000-01-01

    Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga + ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures of packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed

  7. Damage accumulation in MgO irradiated with MeV Au ions at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Bachiller-Perea, Diana, E-mail: dianabachillerperea@gmail.com [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, C/Faraday 3, 28049, Madrid (Spain); Dpto. de Física Aplicada, Universidad Autónoma de Madrid, Ciudad Universitaria de Cantoblanco, 28049, Madrid (Spain); Debelle, Aurélien, E-mail: aurelien.debelle@u-psud.fr [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Thomé, Lionel [Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, Université Paris-Saclay, 91405, Orsay Cedex (France); Behar, Moni [Instituto de Física, Universidade Federal do Rio Grande do Sul, C.P. 15051, 91501-970, Porto Alegre, RS (Brazil)

    2016-09-15

    The damage accumulation process in MgO single crystals under medium-energy heavy ion irradiation (1.2 MeV Au) at fluences up to 4 × 10{sup 14} cm{sup −2} has been studied at three different temperatures: 573, 773, and 1073 K. Disorder depth profiles have been determined through the use of the Rutherford backscattering spectrometry in channeling configuration (RBS/C). The analysis of the RBS/C data reveals two steps in the MgO damage process, irrespective of the temperature. However, we find that for increasing irradiation temperature, the damage level decreases and the fluence at which the second step takes place increases. A shift of the damage peak at increasing fluence is observed for the three temperatures, although the position of the peak depends on the temperature. These results can be explained by an enhanced defect mobility which facilitates defect migration and may favor defect annealing. X-ray diffraction reciprocal space maps confirm the results obtained with the RBS/C technique. - Highlights: • High-temperature MeV-ion irradiated MgO exhibits a two-step damage process. • The occurrence of the second step is delayed with increasing temperature. • The damage level decreases with increasing temperature. • A shift of the damage peak is observed with increasing fluence. • A high defect mobility at high temperatures in MgO is clearly evidenced.

  8. Hydrogen microscopy and analysis of DNA repair using focused high energy ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Dollinger, G. [Universitaet der Bundeswehr Muenchen, LRT 2, Werner Heisenberg Weg 39, D-85579 Neubiberg (Germany)]. E-mail: guenther.dollinger@unibw.de; Bergmaier, A. [Universitaet der Bundeswehr Muenchen, LRT 2, Werner Heisenberg Weg 39, D-85579 Neubiberg (Germany); Hauptner, A. [Physik Department E 12, Technische Universitaet Muenchen, D-85748 Garching (Germany); Dietzel, S. [Department Biologie II, Ludwigs-Maximilians-Universitaet Muenchen, Grosshaderner Str. 2, 82152 Planegg-Martinsried (Germany); Drexler, G.A. [Strahlenbiologisches Institut, LMU Muenchen, Schillerstr. 42, D-80336 Muenchen und Institut fuer Strahlenbiologie, GSF-Forschungszentrum, D-85764 Neuherberg (Germany); Greubel, C. [Physik Department E 12, Technische Universitaet Muenchen, D-85748 Garching (Germany); Hable, V. [Universitaet der Bundeswehr Muenchen, LRT 2, Werner Heisenberg Weg 39, D-85579 Neubiberg (Germany); Reichart, P. [School of Physics, University of Melbourne, Victoria 3010 (Australia); Kruecken, R. [Physik Department E 12, Technische Universitaet Muenchen, D-85748 Garching (Germany); Cremer, T. [Department Biologie II, Ludwigs-Maximilians-Universitaet Muenchen, Grosshaderner Str. 2, 82152 Planegg-Martinsried (Germany); Friedl, A.A. [Strahlenbiologisches Institut, LMU Muenchen, Schillerstr. 42, D-80336 Muenchen und Institut fuer Strahlenbiologie, GSF-Forschungszentrum, D-85764 Neuherberg (Germany)

    2006-08-15

    The ion microprobe SNAKE (Supraleitendes Nanoskop fuer Angewandte Kernphysikalische Experimente) at the Munich 14 MV tandem accelerator achieves beam focussing by a superconducting quadrupole doublet and can make use of a broad range of ions and ion energies, i.e. 4-28 MeV protons or up to 250 MeV gold ions. Due to these ion beams, SNAKE is particularly attractive for ion beam analyses in various fields. Here we describe two main applications of SNAKE. One is the unique possibility to perform three-dimensional hydrogen microscopy by elastic proton-proton scattering utilizing high energy proton beams. The high proton energies allow the analysis of samples with a thickness in the 100 {mu}m range with micrometer resolution and a sensitivity better than 1 ppm. In a second application, SNAKE is used to analyse protein dynamics in cells by irradiating live cells with single focussed ions. Fluorescence from immunostained protein 53BP1 is used as biological track detector after irradiation of HeLa cells. It is used to examine the irradiated region in comparison with the targeted region. Observed patterns of fluorescence foci agree reasonably well with irradiation patterns, indicating an overall targeting accuracy of about 2 {mu}m while the beam spot size is less than 0.5 {mu}m in diameter. This performance shows successful adaptation of SNAKE for biological experiments where cells are targeted on a sub-cellular level by energetic ions.

  9. Angle-resolved imaging of single-crystal materials with MeV helium ions

    Energy Technology Data Exchange (ETDEWEB)

    Strathman, M D; Baumann, S [Charles Evans and Associates, Redwood City, CA (United States)

    1992-02-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a {+-}2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.).

  10. Energy loss and straggling of MeV Si ions in gases

    Energy Technology Data Exchange (ETDEWEB)

    Vockenhuber, C., E-mail: vockenhuber@phys.ethz.ch [Laboratory of Ion Beam Physics, ETH Zurich, Otto-Stern-Weg 5, 8093 Zurich (Switzerland); Arstila, K. [Department of Physics, University of Jyväskylä, 40014 Jyväskylä (Finland); Jensen, J. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Julin, J.; Kettunen, H.; Laitinen, M.; Rossi, M.; Sajavaara, T. [Department of Physics, University of Jyväskylä, 40014 Jyväskylä (Finland); Thöni, M. [Laboratory of Ion Beam Physics, ETH Zurich, Otto-Stern-Weg 5, 8093 Zurich (Switzerland); Whitlow, H.J. [Institut des Microtechnologies Appliquées Arc, Haute Ecole Arc Ingénierie, 2300 La Chaux-de-Fonds (Switzerland)

    2017-01-15

    We present measurements of energy loss and straggling of Si ions in gases. An energy range from 0.5 to 12 MeV/u was covered using the 6 MV EN tandem accelerator at ETH Zurich, Switzerland, and the K130 cyclotron accelerator facility at the University of Jyväskylä, Finland. Our energy-loss data compare well with calculation based on the SRIM and PASS code. The new straggling measurements support a pronounced peak in He gas at around 4 MeV/u predicted by recent theoretical calculations. The straggling curve structure in the other gases (N{sub 2}, Ne, Ar, Kr) is relatively flat in the covered energy range. Although there is a general agreement between the straggling data and the theoretical calculations, the experimental uncertainties are too large to confirm or exclude the predicted weak multi-peak structure in the energy-loss straggling.

  11. Angle-resolved imaging of single-crystal materials with MeV helium ions

    International Nuclear Information System (INIS)

    Strathman, M.D.; Baumann, S.

    1992-01-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a ±2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.)

  12. Understanding focused ion beam guided anodic alumina nanopore development

    International Nuclear Information System (INIS)

    Chen Bo; Lu, Kathy; Tian Zhipeng

    2011-01-01

    Graphical abstract: Display Omitted Highlights: → We study the effect of FIB patterning on pore evolution during anodization. → FIB patterned concaves with 1.5 nm depth can effectively guide nanopore growth. → The edge effect of FIB guided patterns causes nanopores to bend. → Anodization window is enlarged to 50-80 V for 150 nm interpore distance hexagonal arrays. - Abstract: Focused ion beam (FIB) patterning in combination with anodization has shown great promise in creating unique pore patterns. This work is aimed to understand the effect of the FIB patterned sites in guiding anodized pore development. Highly ordered porous anodic alumina has been created with the guidance of FIB created patterns on electropolished aluminum followed by oxalic acid anodization. Shallow concaves created by the FIB with only 1.5 nm depth can effectively guide the growth of ordered nanopore patterns. With the guidance of the FIB pattern, the anodization rate is much faster and the nanopore growth direction bends at the boundary of the FIB patterned and un-patterned regions. FIB patterning also enlarges the anodization window; ordered nanopore arrays with 150 nm interpore distances can be produced under an applied potential from 50 V to 80 V. The fundamental understanding of these unique processes is discussed.

  13. Dwell time adjustment for focused ion beam machining

    International Nuclear Information System (INIS)

    Taniguchi, Jun; Satake, Shin-ichi; Oosumi, Takaki; Fukushige, Akihisa; Kogo, Yasuo

    2013-01-01

    Focused ion beam (FIB) machining is potentially useful for micro/nano fabrication of hard brittle materials, because the removal method involves physical sputtering. Usually, micro/nano scale patterning of hard brittle materials is very difficult to achieve by mechanical polishing or dry etching. Furthermore, in most reported examples, FIB machining has been applied to silicon substrates in a limited range of shapes. Therefore, a versatile method for FIB machining is required. We previously established the dwell time adjustment for mechanical polishing. The dwell time adjustment is calculated by using a convolution model derived from Preston’s hypothesis. More specifically, the target removal shape is a convolution of the unit removal shape, and the dwell time is calculated by means of one of four algorithms. We investigate these algorithms for dwell time adjustment in FIB machining, and we found that a combination a fast Fourier transform calculation technique and a constraint-type calculation is suitable. By applying this algorithm, we succeeded in machining a spherical lens shape with a diameter of 2.93 μm and a depth of 203 nm in a glassy carbon substrate by means of FIB with dwell time adjustment

  14. Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag{sup 8+})

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Amarjeet, E-mail: amarkaur@physics.du.ac.in [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Dhillon, Anju [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Avasthi, D.K. [Inter University Accelerator Center (IUAC), Aruna Asaf Ali Road, New Delhi 110067 (India)

    2013-07-15

    Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10{sup 10} to 10{sup 12} ions cm{sup −2} of 100 MeV silver (Ag{sup 8+}) ions. The temperature dependence of ac conductivity [σ{sub m}(ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag{sup 8+}) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation.

  15. Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag8+)

    International Nuclear Information System (INIS)

    Kaur, Amarjeet; Dhillon, Anju; Avasthi, D.K.

    2013-01-01

    Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10 10 to 10 12 ions cm −2 of 100 MeV silver (Ag 8+ ) ions. The temperature dependence of ac conductivity [σ m (ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag 8+ ) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation

  16. Elastic atomic displacements and color center creation in LiF crystals irradiated with 3-, 9- and 12-MeV Au ions

    International Nuclear Information System (INIS)

    Sorokin, M.V.; Papaleo, R.M.; Schwartz, K.

    2009-01-01

    Creation of color centers in LiF under irradiation with 3-12-MeV Au ions was studied. Comparison of experimental data of color center creation with computer simulation of the energy deposition and elastic atomic displacements reveals the role of elastic collisions in defect creation by these ions, which have comparable magnitudes of electronic and elastic stopping. The experimentally measured efficiency of color center creation and that predicted by the simulation of elastic displacements have a similar dependence on the projectile energy. Thus, the color center creation is mainly associated with the elastic collisions, despite the relatively large values of the electronic stopping power for these ions. (orig.)

  17. A Monte Carlo computer code for evaluating energy loss of 10 keV to 10 MeV ions in amorphous silicon materials

    International Nuclear Information System (INIS)

    Erramli, H.; Elbounagui, O.; Misdaq, M.A.; Merzouki, A.

    2007-01-01

    The basic concepts of a computer simulation code for determining the energy loss of ions in the 10 keV to 10 MeV energy range in amorphous silicon materials were presented and discussed. Data obtained were found in good agreement with those obtained by using a SRIM programme. Electronic and nuclear energy losses were evaluated. Variation of the energy loss as a function of the incident ion energy were studied. This new computer code is a good tool for evaluating stopping powers of various materials for light and heavy ions

  18. Secondary electron emission of thin carbon foils under the impact of hydrogen atoms, ions and molecular ions, under energies within the MeV range; Multiplicite des electrons secondaires emis par des cibles minces de carbone sous l'impact de projectiles H0, H2+, H3+ d'energie de l'ordre du MeV

    Energy Technology Data Exchange (ETDEWEB)

    Vidovic, Z

    1997-06-15

    This work focuses on the study of the emission statistics of secondary electrons from thin carbon foils bombarded with H{sup 0}, H{sub 2}{sup +} and H{sub 3}{sup +} projectiles in the 0.25-2.2 MeV energy range. The phenomenon of secondary electron emission from solids under the impact of swift ions is mainly due to inelastic interactions with target electrons. The phenomenological and theoretical descriptions, as well as a summary of the main theoretical models are the subject of the first chapter. The experimental set-up used to measure event by event the electron emission of the two faces of a thin carbon foil traversed by an energetic projectile is described in the chapter two. In this chapter are also presented the method and algorithms used to process experimental spectra in order to obtain the statistical distribution of the emitted electrons. Chapter three presents the measurements of secondary electron emission induced by H atoms passing through thin carbon foils. The secondary electron yields are studied in correlation with the emergent projectile charge state. We show the peculiar role of the projectile electron, whether it remains or not bound to the incident proton. The fourth chapter is dedicated to the secondary electron emission induced by H{sub 2}{sup +} and H{sub 3}{sup +} polyatomic ions. The results are interpreted in terms of collective effects in the interactions of these ions with solids. The role of the proximity of the protons, molecular ion fragments, upon the amplitude of these collective effects is evidenced from the study of the statistics of forward emission. These experiences allowed us to shed light on various aspects of atom and polyatomic ion inter-actions with solid surfaces. (author)

  19. Secondary electron emission of thin carbon foils under the impact of hydrogen atoms, ions and molecular ions, under energies within the MeV range; Multiplicite des electrons secondaires emis par des cibles minces de carbone sous l'impact de projectiles H0, H2+, H3+ d'energie de l'ordre du MeV

    Energy Technology Data Exchange (ETDEWEB)

    Vidovic, Z

    1997-06-15

    This work focuses on the study of the emission statistics of secondary electrons from thin carbon foils bombarded with H{sup 0}, H{sub 2}{sup +} and H{sub 3}{sup +} projectiles in the 0.25-2.2 MeV energy range. The phenomenon of secondary electron emission from solids under the impact of swift ions is mainly due to inelastic interactions with target electrons. The phenomenological and theoretical descriptions, as well as a summary of the main theoretical models are the subject of the first chapter. The experimental set-up used to measure event by event the electron emission of the two faces of a thin carbon foil traversed by an energetic projectile is described in the chapter two. In this chapter are also presented the method and algorithms used to process experimental spectra in order to obtain the statistical distribution of the emitted electrons. Chapter three presents the measurements of secondary electron emission induced by H atoms passing through thin carbon foils. The secondary electron yields are studied in correlation with the emergent projectile charge state. We show the peculiar role of the projectile electron, whether it remains or not bound to the incident proton. The fourth chapter is dedicated to the secondary electron emission induced by H{sub 2}{sup +} and H{sub 3}{sup +} polyatomic ions. The results are interpreted in terms of collective effects in the interactions of these ions with solids. The role of the proximity of the protons, molecular ion fragments, upon the amplitude of these collective effects is evidenced from the study of the statistics of forward emission. These experiences allowed us to shed light on various aspects of atom and polyatomic ion inter-actions with solid surfaces. (author)

  20. Correlation between the structure modification and conductivity of 3 MeV Si ion-irradiated polyimide

    International Nuclear Information System (INIS)

    Sun Youmei; Zhu Zhiyong; Li Changlin

    2002-01-01

    The surface modification of the polyimide (PI/Kapton) films was carried out by 3 MeV Si + implantation to fluences ranging from 1x10 12 to 1.25x10 15 ions/cm 2 . Fourier transform infrared (FTIR), Raman and ultraviolet/visible (UV/Vis) spectroscopes were employed to investigate the chemical degradation of function groups in the irradiated layer. FTIR results show that the absorbance of typical function group decreases exponentially as a function of fluence. The damage cross-section of typical bonds of PI was evaluated from the FTIR spectra. Raman analysis shows the absorbed dose for destruction of all function groups is above 218 MGy. The red shifting of the absorption edge from UV to visible reveals the band gap closing which results from increase of the cluster size. The production efficiency of the chromophores was discussed according to UV/Vis analysis. Irradiation dramatically enhances the electrical conductivity and the sheet resistivity in our experiment descends nearly 10 orders of magnitude compared with its intrinsic value

  1. Disordering and amorphization of Zr3Al by 3.8 MeV Zr3+ ion bombardment

    International Nuclear Information System (INIS)

    Chen, F.C.; Ardell, A.J.

    1991-01-01

    The ordered intermetallic compound Zr 3 Al was irradiated with 3. 8 MeV Zr 3+ ions at various fluences up to 5 x 10 12 tons/mm 2 at a temperature of 250 degrees C and the irradiation- induced microstructures were investigated by transmission electron microscopy. Disordering began at the lowest dose, 0.0033 dpa, and complete loss of chemical long-range order occurred at a dose of 0.33 dpa. The onset of amorphization was also observed at this dose. Electron diffraction patterns from irradiated samples showed satellite reflections along in thin foils in [100] orientation and streaking along in foils oriented [011]. These diffraction effects are attributed to the presence of irradiation-induced microstructural defects that, when imaged in dark field, resemble rows of dislocation loops. A model of these arrays of loops, which are suggested to have Burgers vectors of the Frank type, is proposed. The model accounts for the contrast effects observed in the images and the streaking and satellites seen in the diffraction patterns. At the highest dose, 1.6 dpa, a new phase, Zr 5 Al 3 , appeared unexpectedly, most likely as a consequence of irradiation-induced solute segregation

  2. Deposition, milling, and etching with a focused helium ion beam

    NARCIS (Netherlands)

    Alkemade, P.F.A.; Veldhoven, E. van

    2012-01-01

    The recent successful development of the helium ion microscope has produced both a new type of microscopy and a new tool for nanoscale manufacturing. This chapter reviews the first explorations in this new field in nanofabrication. The studies that utilize the Orion helium ion microscope to grow or

  3. Ionic conduction in 70-MeV C5+-ion-irradiated poly(vinylidenefluoride- co-hexafluoropropylene)-based gel polymer electrolytes

    International Nuclear Information System (INIS)

    Saikia, D.; Kumar, A.; Singh, F.; Avasthi, D.K.; Mishra, N.C.

    2005-01-01

    In an attempt to increase the Li + -ion diffusivity, poly(vinylidenefluoride-co-hexafluoropropylene)-(propylene carbonate+diethyl carbonate)-lithium perchlorate gel polymer electrolyte system has been irradiated with 70-MeV C 5+ -ion beam of nine different fluences. Swift heavy-ion irradiation shows enhancement in ionic conductivity at lower fluences and decrease in ionic conductivity at higher fluences with respect to unirradiated gel polymer electrolyte films. Maximum room-temperature (303 K) ionic conductivity is found to be 2x10 -2 S/cm after irradiation with a fluence of 10 11 ions/cm 2 . This interesting result could be attributed to the fact that for a particular ion beam with a given energy, a higher fluence provides critical activation energy for cross linking and crystallization to occur, which results in the decrease in ionic conductivity. X-ray-diffraction results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤10 11 ions/cm 2 ) and increase in crystallinity at higher fluences (>10 11 ions/cm 2 ). Analysis of Fourier-transform infrared spectroscopy results suggests the bond breaking at a fluence of 5x10 9 ions/cm 2 and cross linking at a fluence of 10 12 ions/cm 2 and corroborate conductivity and x-ray-diffraction results. Scanning electron micrographs exhibit increased porosity of the polymer electrolyte after ion irradiation

  4. Effect of 100 MeV Ag{sup +7} ion irradiation on the bulk and surface magnetic properties of Co–Fe–Si thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hysen, T., E-mail: hysenthomas@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Department of Physics, Christian College, Chengannur, Kerala 689 122 (India); Geetha, P. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Al-Harthi, Salim; Al-Omari, I.A. [Department of Physics, College of Science, Sultan Qaboos University, Al Khod 123 (Oman); Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India); Ramanujan, R.V. [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639 798 (Singapore); Sakthikumar, D. [Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe (Japan); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Anantharaman, M.R., E-mail: mra@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin 682 022, Kerala (India)

    2014-12-15

    Thin films of Co–Fe–Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag{sup +7} ions at fluences of 1×10{sup 11}, 1×10{sup 12} and 1×10{sup 13} ions/cm{sup 2}. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag{sup 7+} ions modifies the surface morphology. Irradiating with ions at fluences of 1×10{sup 11} ions/cm{sup 2} smoothens the mesoscopic hill-like structures, and then, at 1×10{sup 12} ions/cm{sup 2} new surface structures are created. When the fluence is further increased to 1×10{sup 13} ions/cm{sup 2} an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×10{sup 11} ions/cm{sup 2}, 1×10{sup 12} ions/cm{sup 2} and 1×10{sup 13} ions/cm{sup 2} the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation. - Highlights: • We have irradiated thermally evaporated Co–Fe–Si thin films on glass substrate with 100 MeV Ag{sup +7} ions using the 15 UD Pelletron Accelerator at IUAC, New Delhi, India. • Surface morphology and magnetic characteristics of the films can be altered with ion irradiation. • It was observed that the variation in surface magnetic properties correlates well with the changes in surface morphology, further reiterating the

  5. Thermal spike model interpretation of sputtering yield data for Bi thin films irradiated by MeV {sup 84}Kr{sup 15+} ions

    Energy Technology Data Exchange (ETDEWEB)

    Mammeri, S. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Ouichaoui, S., E-mail: souichaoui@gmail.com [Université des Sciences et de la Technologie H. Boumediene (USTHB), Faculté de Physique, Laboratoire SNIRM, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria); Ammi, H. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Pineda-Vargas, C.A. [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Faculty of Health and Wellness Sciences, CPUT, P.O. Box 1906, Bellville 7535 (South Africa); Dib, A. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Msimanga, M. [iThemba LABS, National Research Foundation, P. Bag 11, Wits 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, P. Bag X680, Pretoria 001 (South Africa)

    2015-07-01

    A modified thermal spike model initially proposed to account for defect formation in metals within the high heavy ion energy regime is adapted for describing the sputtering of Bi thin films under MeV Kr ions. Surface temperature profiles for both the electronic and atomic subsystems have been carefully evaluated versus the radial distance and time with introducing appropriate values of the Bi target electronic stopping power for multi-charged Kr{sup 15+} heavy ions as well as different target physical proprieties like specific heats and thermal conductivities. Then, the total sputtering yields of the irradiated Bi thin films have been determined from a spatiotemporal integration of the local atomic evaporation rate. Besides, an expected non negligible contribution of elastic nuclear collisions to the Bi target sputtering yields and ion-induced surface effects has also been considered in our calculation. Finally, the latter thermal spike model allowed us to derive numerical sputtering yields in satisfactorily agreement with existing experimental data both over the low and high heavy ion energy regions, respectively, dominated by elastic nuclear collisions and inelastic electronic collisions, in particular with our data taken recently for Bi thin films irradiated by 27.5 MeV Kr{sup 15+} heavy ions. An overall consistency of our model calculation with the predictions of sputtering yield theoretical models within the target nuclear stopping power regime was also pointed out.

  6. CR-39 track detector calibration for H, He, and C ions from 0.1-0.5 MeV up to 5 MeV for laser-induced nuclear fusion product identification.

    Science.gov (United States)

    Baccou, C; Yahia, V; Depierreux, S; Neuville, C; Goyon, C; Consoli, F; De Angelis, R; Ducret, J E; Boutoux, G; Rafelski, J; Labaune, C

    2015-08-01

    Laser-accelerated ion beams can be used in many applications and, especially, to initiate nuclear reactions out of thermal equilibrium. We have experimentally studied aneutronic fusion reactions induced by protons accelerated by the Target Normal Sheath Acceleration mechanism, colliding with a boron target. Such experiments require a rigorous method to identify the reaction products (alpha particles) collected in detectors among a few other ion species such as protons or carbon ions, for example. CR-39 track detectors are widely used because they are mostly sensitive to ions and their efficiency is near 100%. We present a complete calibration of CR-39 track detector for protons, alpha particles, and carbon ions. We give measurements of their track diameters for energy ranging from hundreds of keV to a few MeV and for etching times between 1 and 8 h. We used these results to identify alpha particles in our experiments on proton-boron fusion reactions initiated by laser-accelerated protons. We show that their number clearly increases when the boron fuel is preformed in a plasma state.

  7. Experimental evaluation of the response of micro-channel plate detector to ions with 10s of MeV energies

    International Nuclear Information System (INIS)

    Jeong, Tae Won; Ter-Avetisyan, S.; Singh, P. K.; Kakolee, K. F.; Scullion, C.; Ahmed, H.; Hadjisolomou, P.; Alejo, A.; Kar, S.; Borghesi, M.

    2016-01-01

    The absolute calibration of a microchannel plate (MCP) assembly using a Thomson spectrometer for laser-driven ion beams is described. In order to obtain the response of the whole detection system to the particles’ impact, a slotted solid state nuclear track detector (CR-39) was installed in front of the MCP to record the ions simultaneously on both detectors. The response of the MCP (counts/particles) was measured for 5–58 MeV carbon ions and for protons in the energy range 2–17.3 MeV. The response of the MCP detector is non-trivial when the stopping range of particles becomes larger than the thickness of the detector. Protons with energies E ≳ 10 MeV are energetic enough that they can pass through the MCP detector. Quantitative analysis of the pits formed in CR-39 and the signal generated in the MCP allowed to determine the MCP response to particles in this energy range. Moreover, a theoretical model allows to predict the response of MCP at even higher proton energies. This suggests that in this regime the MCP response is a slowly decreasing function of energy, consistently with the decrease of the deposited energy. These calibration data will enable particle spectra to be obtained in absolute terms over a broad energy range.

  8. Experimental evaluation of the response of micro-channel plate detector to ions with 10s of MeV energies

    Science.gov (United States)

    Jeong, Tae Won; Singh, P. K.; Scullion, C.; Ahmed, H.; Kakolee, K. F.; Hadjisolomou, P.; Alejo, A.; Kar, S.; Borghesi, M.; Ter-Avetisyan, S.

    2016-08-01

    The absolute calibration of a microchannel plate (MCP) assembly using a Thomson spectrometer for laser-driven ion beams is described. In order to obtain the response of the whole detection system to the particles' impact, a slotted solid state nuclear track detector (CR-39) was installed in front of the MCP to record the ions simultaneously on both detectors. The response of the MCP (counts/particles) was measured for 5-58 MeV carbon ions and for protons in the energy range 2-17.3 MeV. The response of the MCP detector is non-trivial when the stopping range of particles becomes larger than the thickness of the detector. Protons with energies E ≳ 10 MeV are energetic enough that they can pass through the MCP detector. Quantitative analysis of the pits formed in CR-39 and the signal generated in the MCP allowed to determine the MCP response to particles in this energy range. Moreover, a theoretical model allows to predict the response of MCP at even higher proton energies. This suggests that in this regime the MCP response is a slowly decreasing function of energy, consistently with the decrease of the deposited energy. These calibration data will enable particle spectra to be obtained in absolute terms over a broad energy range.

  9. Experimental evaluation of the response of micro-channel plate detector to ions with 10s of MeV energies

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Tae Won; Ter-Avetisyan, S. [Center for Relativistic Laser Science, Institute of Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005 (Korea, Republic of); Singh, P. K.; Kakolee, K. F. [Center for Relativistic Laser Science, Institute of Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Scullion, C.; Ahmed, H.; Hadjisolomou, P.; Alejo, A.; Kar, S.; Borghesi, M. [School of Mathematics and Physics, The Queen’s University of Belfast, Belfast BT7 1NN (United Kingdom)

    2016-08-15

    The absolute calibration of a microchannel plate (MCP) assembly using a Thomson spectrometer for laser-driven ion beams is described. In order to obtain the response of the whole detection system to the particles’ impact, a slotted solid state nuclear track detector (CR-39) was installed in front of the MCP to record the ions simultaneously on both detectors. The response of the MCP (counts/particles) was measured for 5–58 MeV carbon ions and for protons in the energy range 2–17.3 MeV. The response of the MCP detector is non-trivial when the stopping range of particles becomes larger than the thickness of the detector. Protons with energies E ≳ 10 MeV are energetic enough that they can pass through the MCP detector. Quantitative analysis of the pits formed in CR-39 and the signal generated in the MCP allowed to determine the MCP response to particles in this energy range. Moreover, a theoretical model allows to predict the response of MCP at even higher proton energies. This suggests that in this regime the MCP response is a slowly decreasing function of energy, consistently with the decrease of the deposited energy. These calibration data will enable particle spectra to be obtained in absolute terms over a broad energy range.

  10. Investigation of the channeling of light ions through gold crystals having thicknesses of several hundreds of angstroms from 0.5 to 2 MeV

    International Nuclear Information System (INIS)

    Poizat, J.C.; Remillieux, J.

    A technique to obtain a few hundred A thick self-supporting gold crystal is described. These crystals have been used to perform three channeling experiments with 0.5 to 2 MeV light ions: i) The wide angle scattering probability as a function of the distance from the crystal surface was studied for a beam of particles incident in planar and axial directions. ii) The influence of channeling on the light emission from crystal-excited atomic beams was investigated. iii) A strong channeling effect was found on the probability of transmission of a molecular beam of H 2 + ions through a thin crystal

  11. Ion tail formation and its effect on 14-MeV neutron generation in D-3He plasmas

    International Nuclear Information System (INIS)

    Matsuura, H.; Nakao, Y.; Kudo, K.

    1992-01-01

    This paper reports on the triton distribution function in D- 3 He plasmas which is distorted from a Maxwellian owing to the presence of a 1.01-MeV birth component. The deuteron-triton reaction rate (i.e., 14-MeV neutron generation rate) in the plasma should be smaller than the values evaluated by assuming a Maxwellian triton distribution. A local Fokker-Planck calculation shows that although the degree of the decrease in 14-MeV neutron generation strongly depends on the plasma conditions and also on the energy loss mechanism, it becomes appreciable in actual burning plasmas

  12. Modification of the microstructure and electronic properties of rutile TiO_2 thin films with 79 MeV Br ion irradiation

    International Nuclear Information System (INIS)

    Rath, Haripriya; Dash, P.; Singh, U.P.; Avasthi, D.K.; Kanjilal, D.; Mishra, N.C.

    2015-01-01

    Modifications induced by 79 MeV Br ions in rutile titanium dioxide thin films, synthesized by dc magnetron sputtering are presented. Irradiations did not induce any new XRD peak corresponding to any other phase. The area and the width of the XRD peaks were considerably affected by irradiation, and peaks shifted to lower angles. But the samples retained their crystallinity at the highest fluence (1 × 10"1"3 ions cm"−"2) of irradiation even though the electronic energy loss of 79 MeV Br ions far exceeds the reported threshold value for amorphization of rutile TiO_2. Fitting of the fluence dependence of the XRD peak area to Poisson equation yielded the radius of ion tracks as 2.4 nm. Ion track radius obtained from the simulation based on the thermal spike model matches closely with that obtained from the fluence dependence of the area under XRD peaks. Williamson–Hall analysis of the XRD spectra indicated broadening and shifting of the peaks are a consequence of irradiation induced defect accumulation leading to microstrains, as was also indicated by Raman and UV–Visible absorption study.

  13. Formation of slab waveguides in eulytine type BGO and CaF{sub 2} crystals by implantation of MeV nitrogen ions

    Energy Technology Data Exchange (ETDEWEB)

    Banyasz, I., E-mail: bakonyjako@yahoo.es [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Berneschi, S. [Centro Studi e Ricerche ' Enrico Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Khanh, N.Q.; Lohner, T. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Lengyel, K. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Fried, M. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Peter, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Petrik, P.; Zolnai, Z. [Research Institute for Technical Physics and Materials Science of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Watterich, A. [Department of Crystal Physics, Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Nunzi-Conti, G.; Pelli, S.; Righini, G.C. [MDF-Lab, ' ' Nello Carrara' ' Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2012-09-01

    Ion implantation, compared with other waveguide fabrication methods, has some unique advantages. It has proved to be a universal technique for producing waveguides in most optical materials. The authors of the present article reported fabrication of channel and slab waveguides in an Erbium-doped tungsten tellurite glass by implantation of MeV energy N{sup +} ions. The present article reports successful adaptation of the same technique to the fabrication of slab waveguides in eulytine type bismuth germanate (BGO) and CaF{sub 2} crystals. This is the first report on successful waveguide fabrication in these materials using 3.5 MeV N{sup +} ions at implanted fluences between 5 Multiplication-Sign 10{sup 15} and 4 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. Spectroscopic ellipsometric measurements revealed the existence of guiding structures in both materials. M-line spectroscopic measurements indicated guiding effect in the as-implanted BGO up to 1550 nm and up to 980 nm in the as-implanted CaF{sub 2}. Ion implantation induced the appearance of three peaks in the UV/Vis absorption spectrum of CaF{sub 2}, that can be attributed to colour centres.

  14. Energy dependence of the stopping power of MeV 16O ions in a laser-produced plasma

    International Nuclear Information System (INIS)

    Sakumi, A.; Shibata, K.; Sato, R.; Tsubuku, K.; Nishimoto, T.; Hasegawa, J.; Ogawa, M.; Oguri, Y.; Katayama, T.

    2001-01-01

    The energy dependence of the stopping power of 16 O ions in a laser-produced plasma target was experimentally investigated in the projectile energy range of 150-350 keV/u. In order to produce the target plasma a Q-Switched Nd-glass laser was focused onto a small lithium hydride (LiH) pellet. The plasma electron temperature and the electron line density were 15 eV and 2x10 17 cm -2 , respectively. The energy loss of 16 O ions in the plasma was measured by a time-of-flight (TOF) method. We found that the stopping power in the plasma agreed with the theoretical estimation based on a modified Bohr equation with correction at low velocities. In this evaluation, the effective charge of the projectile was calculated by means of rate equations on the loss and capture of electrons. It has been also found that in this projectile energy range the stopping power of the 16 O ions in the plasma still increases with decreasing projectile energy, while it decreases in cold equivalent

  15. Multiple scattering of MeV ions: Comparison between the analytical theory and Monte-Carlo and molecular dynamics simulations

    International Nuclear Information System (INIS)

    Mayer, M.; Arstila, K.; Nordlund, K.; Edelmann, E.; Keinonen, J.

    2006-01-01

    Angular and energy distributions due to multiple small angle scattering were calculated with different models, namely from the analytical Szilagyi theory, the Monte-Carlo code MCERD in binary collision approximation and the molecular dynamics code MDRANGE, for 2 MeV 4 He in Au at backscattering geometry and for 20 MeV 127 I recoil analysis of carbon. The widths and detailed shapes of the distributions are compared, and reasons for deviations between the different models are discussed

  16. Measurement of the total reaction cross section for interactions between heavy ions (application to the system 12C+12C at 112MeV)

    International Nuclear Information System (INIS)

    Cherkaoui-Tadili, R.

    1982-01-01

    The total reaction cross-section σsub(R) for interactions between heavy ions is predicted to decrease rapidly with the energy of the incident projectile over the energy range 10 MeV/A - 100 MeV/A. We present here an experimental met σsub(R) to test the model based predictions. The method consists in counting the number of all incoming projectiles and the number of out going projectiles that did not interact with the target. The difference between these two numbers corresponds to the number of particles that reacted with the target nuclei and is therefore proportional to σsub(R). Values of σsub(R) have been measured for the system 12 C + 12 C at two incident energies of 112 MeV and 996 MeV. The results of 1444 +- 70 (112 MeV) and 994 +- 50 (996 MeV) show a total reaction cross-section decreasing with energy as predicted from the Glauber model and optical model fits to elastic scattering [fr

  17. Highly focused ion beams in integrated circuit testing

    International Nuclear Information System (INIS)

    Horn, K.M.; Dodd, P.E.; Doyle, B.L.

    1996-01-01

    The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions

  18. Fabrication of nano structures in thin membranes with focused ion beam technology

    NARCIS (Netherlands)

    Gadgil, V.J.; Tong, D.H.; Cesa, Y.; Bennink, Martin L.

    2009-01-01

    In recent years, Focused Ion Beam (FIB) technology has emerged as an important tool for nanotechnology [V.J. Gadgil, F. Morrissey, Encyclopaedia of Nanoscience and Nanotechnology, vol. 1, American Science Publishers, ISBN: 1-58883-057-8, 2004, p101.]. In this paper, applications of focused ion beam

  19. Thermoluminescence properties of Al{sub 2}O{sub 3}:Tb nanoparticles irradiated by gamma rays and 85 MeV C{sup 6+} ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Salah, Numan, E-mail: nsalah@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alharbi, Najlaa D. [Sciences Faculty for Girls, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Habib, Sami S. [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Lochab, S.P. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-11-15

    Carbon ions beam is recently recognized as an ideal cancer treatment modality, because of its excellent local tumor control. These ions have a high relative biological effectiveness resulting from high linear energy transfer (LET) and their sharp Bragg peak. However, the dose of those energetic ions needs to be measured with great precision using a proper dosimeter. Aluminum Oxide (Al{sub 2}O{sub 3}) is a highly luminescent phosphor widely used for radiation dosimetry using thermoluminesence (TL) technique. In this work nanoparticles of this material activated by different elements like Eu, Tb, Dy, Cu and Ag were evaluated for their TL response to gamma rays irradiation. Tb doped sample is found to be the most sensitive sample, which could be selected for exposure to 85 MeV C{sup 6+} ion beam in the fluence range 10{sup 9}–10{sup 13} ions/cm{sup 2}. The obtained result shows that C ion beam irradiated sample has a simple glow curve structure with a prominent glow peak at around 230 °C. This glow curve has a dosimetric peak better than those induced by gamma rays. This glow peak exhibits a linear response in the range 10{sup 9}–10{sup 11} ions/cm{sup 2}, corresponding to the equivalent absorbed doses 0.285–28.5 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The wide linear response of Al{sub 2}O{sub 3}:Tb nanoparticles along with the low fading makes this low cost nanomaterial a good candidate for C ion beam dosimetry. - Highlights: • Nanoparticles of Al{sub 2}O{sub 3} doped with Eu, Tb, Dy, Cu and Ag were synthesised. • They were evaluated for their TL response to gamma rays and C ion beam irradiation. • Tb doped sample is the most sensitive sample to gamma rays. • Al{sub 2}O{sub 3}:Tb was exposed to 85 MeV C{sup 6+} ion beam in the fluence range 10{sup 9}-10{sup 13} ions/cm{sup 2}. • The glow peak induced by C ions has a linear response in the range 10{sup 9

  20. Thermoluminescence properties of Al2O3:Tb nanoparticles irradiated by gamma rays and 85 MeV C6+ ion beam

    International Nuclear Information System (INIS)

    Salah, Numan; Alharbi, Najlaa D.; Habib, Sami S.; Lochab, S.P.

    2015-01-01

    Carbon ions beam is recently recognized as an ideal cancer treatment modality, because of its excellent local tumor control. These ions have a high relative biological effectiveness resulting from high linear energy transfer (LET) and their sharp Bragg peak. However, the dose of those energetic ions needs to be measured with great precision using a proper dosimeter. Aluminum Oxide (Al 2 O 3 ) is a highly luminescent phosphor widely used for radiation dosimetry using thermoluminesence (TL) technique. In this work nanoparticles of this material activated by different elements like Eu, Tb, Dy, Cu and Ag were evaluated for their TL response to gamma rays irradiation. Tb doped sample is found to be the most sensitive sample, which could be selected for exposure to 85 MeV C 6+ ion beam in the fluence range 10 9 –10 13 ions/cm 2 . The obtained result shows that C ion beam irradiated sample has a simple glow curve structure with a prominent glow peak at around 230 °C. This glow curve has a dosimetric peak better than those induced by gamma rays. This glow peak exhibits a linear response in the range 10 9 –10 11 ions/cm 2 , corresponding to the equivalent absorbed doses 0.285–28.5 kGy. The absorbed doses, penetration depths and main energy loss were calculated using TRIM code based on the Monte Carlo simulation. The wide linear response of Al 2 O 3 :Tb nanoparticles along with the low fading makes this low cost nanomaterial a good candidate for C ion beam dosimetry. - Highlights: • Nanoparticles of Al 2 O 3 doped with Eu, Tb, Dy, Cu and Ag were synthesised. • They were evaluated for their TL response to gamma rays and C ion beam irradiation. • Tb doped sample is the most sensitive sample to gamma rays. • Al 2 O 3 :Tb was exposed to 85 MeV C 6+ ion beam in the fluence range 10 9 -10 13 ions/cm 2 . • The glow peak induced by C ions has a linear response in the range 10 9 -10 11 ions/cm 2

  1. MeV ion irradiation induced evolution of morphological, structural and optical properties of nanostructured SnO2 thin films

    International Nuclear Information System (INIS)

    Mohapatra, Satyabrata; Bhardwaj, Neha; Pandey, Akhilesh

    2015-01-01

    Nanostructured SnO 2 thin films were prepared by carbothermal evaporation method. Morphological, structural and optical properties of the SnO 2 thin films, before and after 8 MeV Si ion irradiation to fluences varying from 1 × 10 13 to 1 × 10 15 ions cm −2 , were well characterized using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), Raman spectroscopy and photoluminescence spectroscopy (PL). XRD studies revealed the presence of SnO 2 and Sn nanoparticles in the as-deposited samples. AFM and FESEM studies on the irradiated samples revealed formation of nanoring-like structures, at a fluence of 1 × 10 15 ions cm −2 , with a central hole and circular rim consisting of nearly monodisperse SnO 2 nanoparticles. PL studies revealed strong enhancement in UV emissions upon 8 MeV Si ion irradiation. A growth mechanism underlying the formation of SnO 2 nanorings involving self-assembly of SnO 2 nanoparticles around nanoholes is tentatively proposed. (paper)

  2. Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

    International Nuclear Information System (INIS)

    Hlatshwayo, T T; Kuhudzai, R J; Njoroge, E G; Malherbe, J B; O’Connell, J H; Skuratov, V A; Msimanga, M

    2015-01-01

    The effect of swift heavy ion (Xe 167 MeV) irradiation on polycrystalline SiC individually implanted with 360 keV Kr and Xe ions at room temperature to fluences of 2  ×  10 16 cm −2 and 1  ×  10 16 cm −2 respectively, was investigated using transmission electron microscopy (TEM), Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Implanted specimens were each irradiated with 167 MeV Xe +26 ions to a fluence of 8.3  ×  10 14 cm −2 at room temperature. It was observed that implantation of 360 keV Kr and Xe ions individually at room temperature amorphized the SiC from the surface up to a depth of 186 and 219 nm respectively. Swift heavy ion (SHI) irradiation reduced the amorphous layer by about 27 nm and 30 nm for the Kr and Xe samples respectively. Interestingly, the reduction in the amorphous layer was accompanied by the appearance of randomly oriented nanocrystals in the former amorphous layers after SHI irradiation in both samples. Previously, no similar nanocrystals were observed after SHI irradiations at electron stopping powers of 33 keV nm −1 and 20 keV nm −1 to fluences below 10 14 cm −2 . Therefore, our results suggest a fluence threshold for the formation of nanocrystals in the initial amorphous SiC after SHI irradiation. Raman results also indicated some annealing of radiation damage after swift heavy ion irradiation and the subsequent formation of small SiC crystals in the amorphous layers. No diffusion of implanted Kr and Xe was observed after swift heavy ion irradiation. (paper)

  3. Attenuation curves in concrete of neutrons from 100 to 400 MeV per nucleon He, C, Ne, Ar, Fe and Xe ions on various targets

    Energy Technology Data Exchange (ETDEWEB)

    Agosteo, S.; Nakamura, T.; Silari, M. E-mail: marco.silari@cern.ch; Zajacova, Z

    2004-04-01

    Data on transmission of neutrons in concrete generated by heavy ions of intermediate energies (of typically up to 1 GeV per nucleon) are of interest for shielding design of accelerators for use in both the research and in the medical field. The energy distributions of neutrons produced by ions of different species (from He to Xe) striking various targets at energies from 100 to 800 MeV per nucleon were recently measured by Kurosawa et al. in the angular range 0-90 deg. . These spectra were used as input data for Monte Carlo simulations to determine source terms and attenuation lengths in ordinary concrete. The present paper presents calculations for 100 MeV/u helium ions on a Cu target, 100 MeV/u carbon ions on C, Al, Cu and Pb, 100 MeV/u neon ions on Cu and Pb, 400 MeV/u carbon ions on C, Al, Cu and Pb, 400 MeV/u neon ions on Cu, 400 MeV/u Ar ions on Cu, 400 MeV/u Fe ions on Cu and 400 MeV/u Xe ions on Cu. The results include the contributions of all secondaries. Some of the resulting attenuation curves are best fitted by a double-exponential function rather than the usual single-exponential. The effect of various approximations introduced in the simulations is discussed. A comparison is made with shielding data for protons scaled with the ion mass number. A comparison is also made with a simple analytical model in use at GANIL.

  4. Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

    International Nuclear Information System (INIS)

    Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

    1975-01-01

    Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

  5. Neutron production and ion beam generation in plasma focus devices

    International Nuclear Information System (INIS)

    Steinmetz, K.

    1980-01-01

    Concerning the physical processes leading to neutron emission, a clearer situation has been achieved compared to the state at the start of this work. The general discussion will realize that the whole experimental data cannot be described consistently by the predictions of either the beam-target model or the quasi-thermonuclear fusion model, although many questions about the neutron production properties have been solved. In particular the neutron fluence anisotropy is found to be a property basically related to the existence of fast ions escaping axially out of the pinch region. The requirements to explain broad radial neutron energy spectra, long emission times, and energetic but not spatial emission anisotropies suggest a kind of particle trapping in the main source region. (orig./HT)

  6. Properties of heavy ion linacs with alternating phase focusing

    International Nuclear Information System (INIS)

    Deitinghoff, H.; Junior, P.; Klein, H.

    1976-01-01

    General aspects for the application of alternating phase focusing are discussed. The results demand necessary linac parameters. The possibility of their accomplishment by already existing or feasible linac structures with acceleration rates of 2 - 3 MV/m will be considered

  7. Target bombardment by ion beams generated in the Focus experiment

    International Nuclear Information System (INIS)

    Bernard, Alain; Coudeville, Alain; Garconnet, J.-P.; Jolas, A.; Mascureau, J. de; Nazet, Christian.

    1976-01-01

    In a Mather-Focus experiment, it was shown that 80% of the neutron emitted were generated through bombardment. The apparatus was operated with various targets at a distance of 13mm from the anode. In the low pressure regime, a deuteron beam of high energy was produced. Its emission duration was measured using a CD 2 target [fr

  8. Measurement of the stopping power of water for carbon ions in the energy range of 1 MeV-6 MeV using the inverted Doppler-shift attenuation method

    Energy Technology Data Exchange (ETDEWEB)

    Rahm, Johannes Martin

    2016-10-31

    Cancer therapy using carbon ions has gained increasing interest in the last decade due to its advantageous dose distributions. For the dosimetry and treatment planning, the accurate knowledge of the stopping power of water for carbon ions is of crucial importance. In the high energy region, the stopping power can be calculated rather accurately by means of the Bethe-Bloch formula. In the case of projectile velocities comparable to those of the valence electrons of the target, these calculations are subject to large uncertainties. There exist no experimental data for the stopping power of water for projectile energies prevailing in the so-called Bragg peak region. The currently available stopping power data for water are derived from measurements in water vapour or D{sub 2}O ice and, hence, neglect the dependence on the state of aggregation. The stopping power of water for charged particles is of high interest not only for practical applications but also to consider how physical and chemical state of the target influence the collisional energy transfer. For the measurement of the stopping power of water, the inverted Doppler-shift attenuation method was used in this work. This method has the advantage that the projectile itself is not needed to be detected and can be slowed down entirely in the target. In this method, the stopping power is determined from the Doppler-shift of the gamma-quanta emitted by projectiles during their slow down. This experiment can be performed at atmospheric pressure and consequently, the stopping power of water can be measured in its real physiological condition. In this work, the stopping power of water for carbon ions was measured for the first time in the energy range between 1 MeV and 6 MeV covering the kinetic energies of carbon ions in the Bragg peak region. The experimental method is presented in detail along with the design of the apparatus and of the data acquisition system. A comprehensive analysis of instrumental effects

  9. Elastic and inelastic scattering of {sup 15}N ions by {sup 9}Be at 84 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Rudchik, A.T., E-mail: rudchik@kinr.kiev.ua [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Chercas, K.A. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Kemper, K.W. [Physics Department, Florida State University, Tallahassee, FL 32306-4350 (United States); Rusek, K. [Heavy Ion Laboratory of Warsaw University, ul. L. Pasteura 5A, PL-02-093 Warsaw (Poland); Rudchik, A.A.; Herashchenko, O.V. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Koshchy, E.I. [Kharkiv National University, pl. Svobody 4, 61077 Kharkiv (Ukraine); Pirnak, Val.M. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Piasecki, E.; Trzcińska, A. [Heavy Ion Laboratory of Warsaw University, ul. L. Pasteura 5A, PL-02-093 Warsaw (Poland); Sakuta, S.B. [Russian Research Center “Kurchatov Institute”, Kurchatov Sq. 1, 123182 Moscow (Russian Federation); Siudak, R. [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, ul. Radzikowskiego 152, PL-31-342 Cracow (Poland); Strojek, I. [National Center for Nuclear Researches, ul. Hoża 69, PL-00-681 Warsaw (Poland); Stolarz, A. [Heavy Ion Laboratory of Warsaw University, ul. L. Pasteura 5A, PL-02-093 Warsaw (Poland); Ilyin, A.P.; Ponkratenko, O.A.; Stepanenko, Yu.M.; Shyrma, Yu.O. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine); Szczurek, A. [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, ul. Radzikowskiego 152, PL-31-342 Cracow (Poland); Uleshchenko, V.V. [Institute for Nuclear Research, Ukrainian Academy of Sciences, Prospect Nauki 47, 03680 Kyiv (Ukraine)

    2016-03-15

    Angular distributions of the {sup 9}Be + {sup 15}N elastic and inelastic scattering were measured at E{sub lab}({sup 15}N) = 84 MeV (E{sub c.m.} = 31.5 MeV) for the 0–6.76 MeV states of {sup 9}Be and 0–6.32 MeV states of {sup 15}N. The data were analyzed within the optical model and coupled-reaction-channels method. The elastic and inelastic scattering, spin reorientations of {sup 9}Be in ground and excited states and {sup 15}N in excited states as well as the most important one- and two-step transfer reactions were included in the channels-coupling scheme. The parameters of the {sup 9}Be + {sup 15}N optical potential of Woods–Saxon form as well as deformation parameters of these nuclei were deduced. The analysis showed that the {sup 9}Be + {sup 15}N pure potential elastic scattering dominates at the forward angles whereas the ground state spin reorientation of {sup 9}Be gives a major contribution to the elastic scattering cross sections at the large angles. Contributions from particle transfers are found to be negligible for the present scattering system.

  10. Anisotropic expansion and amorphization of Ga{sub 2}O{sub 3} irradiated with 946 MeV Au ions

    Energy Technology Data Exchange (ETDEWEB)

    Tracy, Cameron L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States); Lang, Maik [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Severin, Daniel; Bender, Markus [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Trautmann, Christina [GSI Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Ewing, Rodney C. [Department of Geological Sciences, Stanford University, Stanford, CA 94305 (United States)

    2016-05-01

    The structural response of β-Ga{sub 2}O{sub 3} to irradiation-induced electronic excitation was investigated. A polycrystalline pellet of this material was irradiated with 946 MeV Au ions and the resulting structural modifications were characterized using in situ X-ray diffraction analysis at various ion fluences, up to 1 × 10{sup 13} cm{sup −2}. Amorphization was induced, with the accumulation of the amorphous phase following a single-impact mechanism in which each ion produces an amorphous ion track along its path. Concurrent with this phase transformation, an increase in the unit cell volume of the material was observed and quantified using Rietveld refinement. This unit cell expansion increased as a function of ion fluence before saturating at 1.8%. This effect is attributed to the generation of defects in an ion track shell region surrounding the amorphous track cores. The unit cell parameter increase was highly anisotropic, with no observed expansion in the [0 1 0] direction. This may be due to the structure of β-Ga{sub 2}O{sub 3}, which exhibits empty channels of connected interstitial sites oriented in this direction.

  11. Violence of heavy-ion reactions from neutron multiplicity: 11 to 20A MeV /sup 20/Ne+ /sup 238/U

    International Nuclear Information System (INIS)

    Jahnke, U.; Ingold, G.; Hilscher, D.; Lehmann, M.; Schwinn, E.; Zank, P.

    1986-01-01

    The suitability of the neutron multiplicity as a gauge for the violence of medium-energy heavy-ion reactions is investigated for the first time. For this purpose the number of neutrons emitted from fission reactions induced by 220-, 290-, and 400-MeV /sup 20/Ne on /sup 238/U is registered event-by-event with a large 4π scintillator tank. It is shown that the neutron multiplicity is indeed closely related to the two quantities characterizing the violence: the induced total intrinsic excitation and the linear momentum transfer

  12. Development and testing of the improved focusing quadrupole for heavy ion fusion accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Manahan, R R; Martovetsky, N N; Meinke, R B; Chiesa, L; Lietzke, A F; Sabbi, G L; Seidl, P A

    2003-10-23

    An improved version of the focusing magnet for a Heavy Ion Fusion (HIF) accelerator was designed, built and tested in 2002-2003. This quadrupole has higher focusing power and lower error field than the previous version of the focusing quadrupoles successfully built and tested in 2001. We discuss the features of the new design, selected fabrication issues and test results.

  13. Multi-slit triode ion optical system with ballistic beam focusing

    Energy Technology Data Exchange (ETDEWEB)

    Davydenko, V., E-mail: V.I.Davydenko@inp.nsk.su; Amirov, V.; Gorbovsky, A.; Deichuli, P.; Ivanov, A.; Kolmogorov, A.; Kapitonov, V.; Mishagin, V.; Shikhovtsev, I.; Sorokin, A.; Stupishin, N. [Budker Institute of Nuclear Physics, Novosibirsk 630090 (Russian Federation); Karpushov, A. N. [Ecole Polytechnique Fédérale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland); Smirnov, A. [Tri Alpha Energy, Inc., Rancho Santa Margarita, California 92688 (United States); Uhlemann, R. [Institute of Energy and Climate Research-Plasma Physics, Research Center Juelich, 52425 Juelich (Germany)

    2016-02-15

    Multi-slit triode ion-optical systems with spherical electrodes are of interest for formation of intense focused neutral beams for plasma heating. At present, two versions of focusing multi-slit triode ion optical system are developed. The first ion optical system forms the proton beam with 15 keV energy, 140 A current, and 30 ms duration. The second ion optical system is intended for heating neutral beam injector of Tokamak Configuration Variable (TCV). The injector produces focused deuterium neutral beam with 35 keV energy, 1 MW power, and 2 s duration. In the later case, the angular beam divergence of the neutral beam is 20-22 mrad in the direction across the slits of the ion optical system and 12 mrad in the direction along the slits.

  14. Energy spectrum of argon ions emitted from Filippov type Sahand plasma focus

    International Nuclear Information System (INIS)

    Mohammadnejad, M.; Pestehe, S. J.; Mohammadi, M. A.

    2013-01-01

    The energy and flux of the argon ions produced in Sahand plasma focus have been measured by employing a well-designed Faraday cup. The secondary electron emission effects on the ion signals are simulated and the dimensions of Faraday cup are optimized to minimize these effects. The measured ion energy spectrum is corrected for the ion energy loss and charge exchange in the background gas. The effects of the capacitor bank voltage and working gas pressure on the ion energy spectrum are also investigated. It has been shown that the emitted ion number per energy increases as the capacitor bank voltage increases. Decreasing the working gas pressure leads to the increase in the number of emitted ion per energy

  15. Spot size predictions of a focused ion beam based on laser cooling

    NARCIS (Netherlands)

    Haaf, ten G.; Wouters, S.H.W.; Geer, van der S.B.; Mutsaers, P.H.A.; Luiten, O.J.; Vredenbregt, E.J.D.

    2014-01-01

    The Atomic Beam Laser Cooled Ion Source (ABLIS) is a new source for focused ion beam instruments, which are used in the semiconductor industry, to image and modify structures on the nanometer length scale. The ABLIS employs laser cooling and compression of an atomic beam of rubidium to increase its

  16. Linear and non-linear calculations of the hose instability in the ion-focused regime

    International Nuclear Information System (INIS)

    Buchanan, H.L.

    1982-01-01

    A simple model is adopted to study the hose instability of an intense relativistic electron beam in a partially neutralized, low density ion channel (ion focused regime). Equations of motion for the beam and the channel are derived and linearized to obtain an approximate dispersion relation. The non-linear equations of motion are then solved numerically and the results compared to linearized data

  17. Preparation of transmission electron microscopy cross-section specimens using focused ion beam milling

    International Nuclear Information System (INIS)

    Langford, R.M.; Petford-Long, A.K.

    2001-01-01

    The preparation of transmission electron microscopy cross-section specimens using focused ion beam milling is outlined. The 'liftout' and 'trench' techniques are both described in detail, and their relative advantages and disadvantages are discussed. Artifacts such as ion damage to the top surface and sidewalls of the cross-section specimens, and methods of reducing them, are addressed

  18. High resolution magnetic force microscopy using focused ion beam modified tips

    NARCIS (Netherlands)

    Phillips, G.N.; Siekman, Martin Herman; Abelmann, Leon; Lodder, J.C.

    2002-01-01

    Atomic force microscope tips coated by the thermal evaporation of a magnetic 30 nm thick Co film have been modified by focused ion beam milling with Ga+ ions to produce tips suitable for magnetic force microscopy. Such tips possess a planar magnetic element with high magnetic shape anisotropy, an

  19. Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

    International Nuclear Information System (INIS)

    Stokes, D J; Vystavel, T; Morrissey, F

    2007-01-01

    There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

  20. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza; Goettler, Drew F.; Jiang, Yingbing; Abbas, Khawar; Baboly, Mohammadhosein Ghasemi; Anjum, Dalaver H.; Chaieb, Saharoui; Leseman, Zayd Chad

    2015-01-01

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties

  1. Fabrication of planar optical waveguides by 6.0 MeV silicon ion implantation in Nd-doped phosphate glasses

    Science.gov (United States)

    Shen, Xiao-Liang; Dai, Han-Qing; Zhang, Liao-Lin; Wang, Yue; Zhu, Qi-Feng; Guo, Hai-Tao; Li, Wei-Nan; Liu, Chun-Xiao

    2018-04-01

    We report the fabrication of a planar optical waveguide by silicon ion implantation into Nd-doped phosphate glass at an energy of 6.0 MeV and a dose of 5.0 × 1014 ions/cm2. The change in the surface morphology of the glass after the implantation can be clearly observed by scanning electron microscopy. The measurement of the dark mode spectrum of the waveguide is conducted using a prism coupler at 632.8 nm. The refractive index distribution of the waveguide is reconstructed by the reflectivity calculation method. The near-field optical intensity profile of the waveguide is measured using an end-face coupling system. The waveguide with good optical properties on the glass matrix may be valuable for the application of the Nd-doped phosphate glass in integrated optical devices.

  2. Quantitative approach to relate dielectric constant studies with TSDC studies of 50 MeV Si ion irradiated kapton-H polymide

    International Nuclear Information System (INIS)

    Quamara, J.K.; Garg, Maneesha; Sridharbabu, Y.; Prabhavathi, T.

    2003-01-01

    Temperature and frequency dependent dielectric behaviour has been investigated for pristine and swift heavy ion irradiated (Si ion, 50 MeV energy) kapton-H polyimide in the temperature range of 30 to 250 deg C at frequencies 120 Hz, 1 kHz, 10 kHz and 100 kHz respectively. The dielectric relaxation behaviour of the same samples was also studied using thermally stimulated discharge current (TSDC) technique. A quantitative approach is developed using a well-known Clausius Mossotti equation to relate the TSDC findings to the dielectric constant studies. An overall increase in the dielectric constant of the irradiated samples are also in conformity to the TSDC findings. (author)

  3. Cross sections for pion, proton, and heavy-ion production from 800 MeV protons incident upon aluminum and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dicello, J.F. (Clarkson Univ., Potsdam, NY (USA)); Schillaci, M.E.; Liu Lonchang (Los Alamos National Lab., NM (USA))

    1990-01-01

    When high-energy cosmic rays interact with electronics or other materials in a spacecraft, including the occupants themselves, pions are produced as secondary particles. These secondary pions interact further in the materials producing nuclear secondaries, including nuclear recoils and heavy-ion tertiaries. The secondary pions and the the tertiary particles are capable of producing single-event upsets and other damage in integrated circuits and damage in biological systems. Negative pions stopping in materials are particularly effective because of their unique ability to produce short-range heavy particles from pion stars. With the Los Alamos National Laboratory's version of the intranuclear cascade evaporation code, VEGAS, we have calculated the number of pions produced per energy interval per incident proton from 800 MeV protons on aluminum-27 and silicon-28 along with corresponding results for neutrons, protons, and heavier ions. (orig.).

  4. Ion beam extraction from a matrix ECR plasma source by discrete ion-focusing effect

    DEFF Research Database (Denmark)

    Stamate, Eugen; Draghici, Mihai

    2010-01-01

    -ECR plasma source [3] with transversal magnetic filter for electron temperature control. 12 ECR plasma cells are placed 7.5 cm apart on the top of a cubic chamber 40x40x40 cm3. Each cell can be controlled independently by tuning the injected microwave power. The discharge is operated at pressures below 1 m......Positive or negative ion beams extracted from plasma are used in a large variety of surface functionalization techniques such as implantation, etching, surface activation, passivation or oxidation. Of particular importance is the surface treatment of materials sensitive to direct plasma exposure...... due to high heath fluxes, the controllability of the ion incidence angle, and charge accumulation when treating insulating materials. Despite of a large variety of plasma sources available for ion beam extraction, there is a clear need for new extraction mechanisms that can make available ion beams...

  5. Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction

    International Nuclear Information System (INIS)

    Emoto, T.; Ghatak, J.; Satyam, P. V.; Akimoto, K.

    2009-01-01

    We studied the strain introduced in a Si(111) substrate due to MeV ion implantation using extremely asymmetric x-ray diffraction and measured the rocking curves of asymmetrical 113 diffraction for the Si substrates implanted with a 1.5 MeV Au 2+ ion at fluence values of 1x10 13 , 5x10 13 , and 1x10 14 /cm 2 . The measured curves consisted of a bulk peak and accompanying subpeak with an interference fringe. The positional relationship of the bulk peak to the subpeak and the intensity variation of those peaks with respect to the wavelengths of the x rays indicated that crystal lattices near the surface were strained; the lattice spacing of surface normal (111) planes near the surface was larger than that of the bulk. Detailed strain profiles along the depth direction were successfully estimated using a curve-fitting method based on Darwin's dynamical diffraction theory. Comparing the shapes of resultant strain profiles, we found that a strain evolution rapidly occurred within a depth of ∼300 nm at fluence values between 1x10 13 and 5x10 13 /cm 2 . This indicates that formation of the complex defects progressed near the surface when the fluence value went beyond a critical value between 1x10 13 and 5x10 13 /cm 2 and the defects brought a large strain to the substrate.

  6. Characterization of light ion beams generated by a plasma focus device

    International Nuclear Information System (INIS)

    Koo, Bon Cheul

    1999-02-01

    Plasma focus device has been studied as neutron and X-ray sources generated from the high pressure fusion reaction during Z-pinch. Recently, the scope of the device is focused on efficient neutron generation, X-ray lithography, preliminary fusion experiment, and ion/electron beam generation devices. A Hexagonal Beam Generator with six parallel capacitors has been developed and generated ion beams from 30kJ(C=6 μ F, V= 100kV) maximum energy. To find the optimum condition of ion beam generation, the correlation among charging voltage(20∼30kV), operation pressure of chamber(0.1∼5 torr), and length of electrode has been studied. To measure ion beam, a Faraday Cup and 3 Rogowski coils were installed. Energy of ion beam was obtained by adopting time-of -flight method between Rogowski coils

  7. Ion beam focusing by the atomic chains of a crystal lattice

    International Nuclear Information System (INIS)

    Shulga, V.I.

    1975-01-01

    A study is made of the focusing of a parallel ion beam by a pair of close packed atomic chains of a crystal. The focal length of this system has been calculated to the approximation of continuous potential of chain in the general form and also for a number of specific potentials of ion-atom interactions. Ar ion beam focusing by a Cu chain pair is discusssed in detail. For this case, the focal length has been calculated as a function of ion energy using the method of computer simulation of ion trajectories in the chain field. The calculations were made on the basis of the Born-Mayer potential with various constants. A pronounced dependence of focal length on the constant in this potential has been found. (author)

  8. Discrete focusing effect of positive ions by a plasma-sheath lens

    International Nuclear Information System (INIS)

    Stamate, E.; Sugai, H.

    2005-01-01

    We demonstrate that the sheath created adjacent to the surface of a negatively biased electrode that interfaces an insulator acts as a lens that focuses the positive ions to distinct regions on the surface. Thus, the positive ion flux is discrete, leading to the formation of a passive surface, of no ion impact, near the edge and an active surface at the center. Trajectories of positive ions within the sheath are obtained by solving in three dimensions the Poisson equation for electrodes of different geometry. Simulations are confirmed by developing the ion flux profile on the electrode surface as the sputtering pattern produced by ion impact. Measurements are performed in a dc plasma produced in Ar gas

  9. Fine focusing of intense heavy ions for the production of hot dense matter

    International Nuclear Information System (INIS)

    Heimrich, B.

    1989-02-01

    In order to perform the first experimental studies on the interaction of intense ion beams with matter an electrostatic quadrupole doublet was developed which focuses the space-charge carrying ion beam of the RFQ accelerator at the GSI Darmstadt on an area of 1 mm 2 . By an especially manufactured target holder this intense ion beam was stopped in tungsten targets and the first plasma induced by heavy ions was produced. Electrons and ions which are emitted from the plasmas have been spectroscoped by an especially for this fabricated spectrometer in their energy and time distribution in the eV region by which first comparisons between theory and praxis on the heating of dense matter by intense ion beams could be made. (orig./HSI) [de

  10. An in-beam PET system for monitoring ion-beam therapy: test on phantoms using clinical 62 MeV protons

    Science.gov (United States)

    Camarlinghi, N.; Sportelli, G.; Battistoni, G.; Belcari, N.; Cecchetti, M.; Cirrone, G. A. P.; Cuttone, G.; Ferretti, S.; Kraan, A.; Retico, A.; Romano, F.; Sala, P.; Straub, K.; Tramontana, A.; Del Guerra, A.; Rosso, V.

    2014-04-01

    Ion therapy allows the delivery of highly conformal dose taking advantage of the sharp depth-dose distribution at the Bragg-peak. However, patient positioning errors and anatomical uncertainties can cause dose distortions. To exploit the full potential of ion therapy, an accurate monitoring system of the ion range is needed. Among the proposed methods to monitor the ion range, Positron Emission Tomography (PET) has proven to be the most mature technique, allowing to reconstruct the β+ activity generated in the patient by the nuclear interaction of the ions, that can be acquired during or after the treatment. Taking advantages of the spatial correlation between positron emitters created along the ions path and the dose distribution, it is possible to reconstruct the ion range. Due to the high single rates generated during the beam extraction, the acquisition of the β+ activity is typically performed after the irradiation (cyclotron) or in between the synchrotron spills. Indeed the single photon rate can be one or more orders of magnitude higher than normal for cyclotron. Therefore, acquiring the activity during the beam irradiation requires a detector with a very short dead time. In this work, the DoPET detector, capable of sustaining the high event rate generated during the cyclotron irradiation, is presented. The capability of the system to acquire data during and after the irradiation will be demonstrated by showing the reconstructed activity for different PMMA irradiations performed using clinical dose rates and the 62 MeV proton beam at the CATANA-LNS-INFN. The reconstructed activity widths will be compared with the results obtained by simulating the proton beam interaction with the FLUKA Monte Carlo. The presented data are in good agreement with the FLUKA Monte Carlo.

  11. An in-beam PET system for monitoring ion-beam therapy: test on phantoms using clinical 62 MeV protons

    International Nuclear Information System (INIS)

    Camarlinghi, N; Sportelli, G; Belcari, N; Cecchetti, M; Ferretti, S; Kraan, A; Retico, A; Straub, K; Guerra, A Del; Rosso, V; Battistoni, G; Sala, P; Cirrone, G A P; Cuttone, G; Romano, F; Tramontana, A

    2014-01-01

    Ion therapy allows the delivery of highly conformal dose taking advantage of the sharp depth-dose distribution at the Bragg-peak. However, patient positioning errors and anatomical uncertainties can cause dose distortions. To exploit the full potential of ion therapy, an accurate monitoring system of the ion range is needed. Among the proposed methods to monitor the ion range, Positron Emission Tomography (PET) has proven to be the most mature technique, allowing to reconstruct the β + activity generated in the patient by the nuclear interaction of the ions, that can be acquired during or after the treatment. Taking advantages of the spatial correlation between positron emitters created along the ions path and the dose distribution, it is possible to reconstruct the ion range. Due to the high single rates generated during the beam extraction, the acquisition of the β + activity is typically performed after the irradiation (cyclotron) or in between the synchrotron spills. Indeed the single photon rate can be one or more orders of magnitude higher than normal for cyclotron. Therefore, acquiring the activity during the beam irradiation requires a detector with a very short dead time. In this work, the DoPET detector, capable of sustaining the high event rate generated during the cyclotron irradiation, is presented. The capability of the system to acquire data during and after the irradiation will be demonstrated by showing the reconstructed activity for different PMMA irradiations performed using clinical dose rates and the 62 MeV proton beam at the CATANA-LNS-INFN. The reconstructed activity widths will be compared with the results obtained by simulating the proton beam interaction with the FLUKA Monte Carlo. The presented data are in good agreement with the FLUKA Monte Carlo

  12. Design of an Acceleration / Deceleration Lens System for Ion Beam Focusing Emerging from Penning Ion Source

    International Nuclear Information System (INIS)

    El-Khabeary, H.

    2007-01-01

    In this study, design of the deceleration lens system has been done by using SIMION 3D version 7.0 computer program. A parallel beam of singly charged argon ions of diameter 2. mm with energy of 5 KeV emerging from Penning ion source was started at a distance of 140 mm before entering the Einzel lens system (three cylinder electrodes ). In order to design this deceleration lens system, two and three cylinder lenses with different parameters are studied. Ion beam emittance as a function of the gap width of the deceleration lens system has been studied for singly charged argon ion trajectories. Influence of the deceleration voltage applied on the deceleration electrode with different voltages of the four electrodes on the ion beam emittance has been investigated with gap widths of 3, 7, 9, 11 and 15 nun. The deceleration lens system was also used as an acceleration lens system by changing and optimising the voltage on each electrode of the deceleration lens system and of the intermediate electrode of the Einzel lens

  13. Observation of the inhomogeneous spatial distribution of MeV ions accelerated by the hydrodynamic ambipolar expansion of clusters

    International Nuclear Information System (INIS)

    Kanasaki, Masato; Jinno, Satoshi; Sakaki, Hironao; Faenov, Anatoly Ya.; Pikuz, Tatiana A.; Nishiuchi, Mamiko; Kiriyama, Hiromitsu; Kando, Masaki; Sugiyama, Akira; Kondo, Kiminori; Matsui, Ryutaro; Kishimoto, Yasuaki; Morishima, Kunihiro; Watanabe, Yukinobu; Scullion, Clare; Smyth, Ashley G.; Alejo, Aaron; Doria, Domenico; Kar, Satyabrata; Borghesi, Marco

    2015-01-01

    An inhomogeneous spatial distribution of laser accelerated carbon/oxygen ions produced via the hydrodynamic ambipolar expansion of CO_2 clusters has been measured by using CR-39 detectors. An inhomogeneous etch pits spatial distribution has appeared on the etched CR-39 detector installed on the laser propagation direction, while homogeneous ones are appeared on those installed at 45° and 90° from the laser propagation direction. From the range of ions in CR-39 obtained by using the multi-step etching technique, the averaged energies of carbon/oxygen ions for all directions are determined as 0.78 ± 0.09 MeV/n. The number of ions in the laser propagation direction is about 1.5 times larger than those in other directions. The inhomogeneous etch pits spatial distribution in the laser propagation direction could originate from an ion beam collimation and modulation by the effect of electromagnetic structures created in the laser plasma. - Highlights: • A spatial distribution of ions due to hydrodynamic ambipolar expansion is measured. • The homogeneous ion energy distribution of 0.78 ± 0.09 MeV/n is measured by CR-39. • The number of ions in the laser axis is about 1.5 times larger than other directions.

  14. Ion emission in solids bombarded with Aun+ (n = 1 - 9) clusters accelerated within the 0.15 - 1.25 MeV energy range

    International Nuclear Information System (INIS)

    Wehbe, Nimer

    2006-06-01

    This experimental work is devoted to the study of the ion emission in solids at the impact of gold clusters of energies within 0.15 to 1.25 MeV range. The physics of ion-solid collisions and the theoretical models of sputtering of solids under ion bombardment are presented in the first chapter. The chapter no. 2 deals with the description of the experimental setup. The study of a gold target allowed to evidence the role of the size and energy of the clusters in determining the emission intensity and the mass distribution of the ions. The 4. chapter gives results from the study of cesium iodide in which the intense emission of CsI clusters could be investigated quantitatively due to multiplicity measurements. Finally, the chapter no. 5 was devoted to the study of a biologic molecule, the phenylalanine, and of a pesticide molecule, chlorosulfuron. This work evidenced the importance of clusters for surface analyses by mass spectrometry

  15. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    Science.gov (United States)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  16. Focused-ion beam patterning of organolead trihalide perovskite for subwavelength grating nanophotonic applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-07-30

    The coherent amplified spontaneous emission and high photoluminescence quantum efficiency of organolead trihalide perovskite have led to research interest in this material for use in photonic devices. In this paper, the authors present a focused-ion beam patterning strategy for methylammonium lead tribromide (MAPbBr3) perovskite crystal for subwavelength grating nanophotonic applications. The essential parameters for milling, such as the number of scan passes, dwell time, ion dose, ion current, ion incident angle, and gas-assisted etching, were experimentally evaluated to determine the sputtering yield of the perovskite. Based on our patterning conditions, the authors observed that the sputtering yield ranged from 0.0302 to 0.0719 μm3/pC for the MAPbBr3 perovskite crystal. Using XeF2 for the focused-ion beam gas-assisted etching, the authors determined that the etching rate was reduced to between 0.40 and 0.97, depending on the ion dose, compared with milling with ions only. Using the optimized patterning parameters, the authors patterned binary and circular subwavelength grating reflectors on the MAPbBr3 perovskite crystal using the focused-ion beam technique. Based on the computed grating structure with around 97% reflectivity, all of the grating dimensions (period, duty cycle, and grating thickness) were patterned with nanoscale precision (>±3 nm), high contrast, and excellent uniformity. Our results provide a platform for utilizing the focused-ion beam technique for fast prototyping of photonic nanostructures or nanodevices on organolead trihalide perovskite.

  17. Secondary ion emission from cleaned surfaces bombarded by 100 MeV accelerator beams at the GSI Darmstadt

    International Nuclear Information System (INIS)

    Wien, K.; Becker, O.; Guthier, W.; Knippelberg, W.; Koczon, P.

    1988-01-01

    The 1.4 MeV/n beam facility for the UNILAC/GSI has been used to study secondary ion emission from surfaces cleaned under UHV conditions by ion etching or cleaving of crystals. The desorption phenomena observed by means of TOF mass spectrometry can be classified as follows: (1) Clean metal surfaces emit metal ions being ejected by atomic collisions cascades. Electronic excitation of surface states seems to support ionization. (2) The desorption of contaminants adsorbed at the metal surface is strongly correlated with the electronic energy loss of the projectiles - even, if the content of impurities is very low. (3) Ion formation at the epitaxial surface of fluoride crystals as CaF 2 , MgF 2 and NaF is initiated by the electronic excitation of the crystal. At high beam energies the mass spectrum is dominated by a series of cluster ions. These cluster ions disappear below a certain energy deposit threshold, whereas small atomic ions are observed over the whole energy range

  18. Electron backscatter diffraction studies of focused ion beam induced phase transformation in cobalt

    Energy Technology Data Exchange (ETDEWEB)

    Jones, H.G., E-mail: helen.jones@npl.co.uk [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Day, A.P. [Aunt Daisy Scientific Ltd, Claremont House, High St, Lydney GL15 5DX (United Kingdom); Cox, D.C. [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2016-10-15

    A focused ion beam microscope was used to induce cubic to hexagonal phase transformation in a cobalt alloy, of similar composition to that of the binder phase in a hardmetal, in a controlled manner at 0°, 45° and 80° ion incident angles. The cobalt had an average grain size of ~ 20 μm, allowing multiple orientations to be studied, exposed to a range of doses between 6 × 10{sup 7} and 2 × 10{sup 10} ions/μm{sup 2}. Electron backscatter diffraction (EBSD) was used to determine the original and induced phase orientations, and area fractions, before and after the ion beam exposure. On average, less phase transformation was observed at higher incident angles and after lower ion doses. However there was an orientation effect where grains with an orientation close to (111) planes were most susceptible to phase transformation, and (101) the least, where grains partially and fully transformed at varying ion doses. - Highlights: •Ion-induced phase change in FCC cobalt was observed at multiple incidence angles. •EBSD was used to study the relationship between grain orientation and transformation. •Custom software analysed ion dose and phase change with respect to grain orientation. •A predictive capability of ion-induced phase change in cobalt was enabled.

  19. Exfoliation of GaAs caused by MeV 1H and 4He ion implantation at left angle 100 right angle , left angle 110 right angle axial and random orientations

    International Nuclear Information System (INIS)

    Rauhala, E.; Raeisaenen, J.

    1994-01-01

    The exfoliation procedure of the ion range determination of gaseous implants in single crystal GaAs is investigated. The correlation of the observed crater depth with the ion range is studied for random, left angle 100 right angle and left angle 110 right angle axial orientation high dose implantations of 1.5-2.5 MeV 1 H and 4 He ions. Depending on the experimental conditions, the crater depths corresponded to range values between the modal range and the range maximum. The observed crater depths could be related to the actual He concentration depth distributions by determining the profiles of the 4 He implants by 2.7 MeV proton backscattering. The implantation parameters affecting the exfoliation process, and especially the increase rate of the sample temperature, are investigated. The range distribution parameters for the 1.5 MeV 4 He implants are presented. ((orig.))

  20. Ion desorption from solid surfaces under slow (KeV) and fast (MeV) ion sputtering. Influence of the charge state and of the incidence angle on the input channel

    International Nuclear Information System (INIS)

    Joret, H.

    1990-06-01

    Solid surfaces of organic and inorganic materials have been bombarded by fast heavy ions (several MeV). It is shown that the charge state of the projectile has a strong influence on the atomic and molecular ion desorption yield. Experimental studies proved that molecular ions can be emitted intact from deep layers underneath the surface (volume emission) with the existence of a crater emission. On the other hand light ions like H(+), H(+)-2, H(+)-3 are emitted from the surface of the solid in a time around 10 -16 second. The H(+) depends on the incident charge state g-i. When using slow ions (keV) the same dependence was observed for the first time and compared to the fast ion results. The equilibrum charge state of fast ions passing through solids was measured. The influence of the angle of incidence was investigated. Langmuir-Blodgett films of fatty acid were used. A geometrical model is developed for the 50 angstroms layer [fr

  1. Simulation of the channelling of ions from MeV C{sub 60} in crystalline solids

    Energy Technology Data Exchange (ETDEWEB)

    Fetterman, A [Basic and Applied Physics, California Institute of Technology, Pasadena, CA (United States); Sinclair, L [Basic and Applied Physics, California Institute of Technology, Pasadena, CA (United States); Tanushev, N [Basic and Applied Physics, California Institute of Technology, Pasadena, CA (United States); Tombrello, T [Basic and Applied Physics, California Institute of Technology, Pasadena, CA (United States); Nardi, E [Department of Particle Physics, Weizmann Institute of Science Rehovot, 76100 (Israel)

    2007-06-14

    Simulations were performed describing the motion and breakup of energetic C{sub 60} ions interacting with crystalline targets. A hybrid algorithm was used that employs a binary collision model for the scattering of the carbon ions by the atoms of the solid, and molecular dynamics for the Coulomb interactions of the 60 carbon ions with one another. For the case of yttrium iron garnet (YIG), directions such as [1 1 0], [1 0 0], [0 1 0] and [0 0 1] demonstrate channelling for a large fraction of the C ions. For directions such as [1 1 1], [2 1 1] and [7 5 3] the trajectories show no more channelling than for random directions. The effects of tilt, shielding and wake-field interactions were investigated for YIG and {alpha}-quartz.

  2. Ga+ implantation in a PZT film during focused ion beam micro-machining

    International Nuclear Information System (INIS)

    Wollschlaeger, Nicole; Oesterle, Werner; Haeusler, Ines; Stewart, Mark

    2015-01-01

    The objective of the present work was to study the impact of Focused Ion Beam (FIB) machining parameters on the thickness of the damaged layer within a thin film PZT. Therefore, different Ga + - ion doses and ion energies were applied to a standard PZT film (80/20 lead zirconium titanate) under two beam incidence angles (90 and 1 ). The thicknesses of the corresponding Ga + -implanted layers were then determined by cross-sectional TEM in combination with energy dispersive spectroscopic (EDS) line-scans and correlated with polarisation hysteresis loops. The results show a decrease of Ga + -implanted layer thickness with decreasing inclination angle, whereas ion energy and ion dose could be correlated with gallium concentration in the implanted layers. Under the most unfavorable conditions the depth of the affected zone was 26 nm, it was only 2 nm for the most favorable conditions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au

    International Nuclear Information System (INIS)

    Chee, See Wee; Kammler, Martin; Balasubramanian, Prabhu; Reuter, Mark C.; Hull, Robert; Ross, Frances M.

    2013-01-01

    We use focused beams of Ga + , Au + and Si ++ ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga + and Au + , precipitates remain after recrystallization, while for Si ++ , dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible. - Highlights: ► Ga + , Au + and Si ++ were implanted into thin membranes of Si. ► Samples were imaged and annealed in situ in a transmission electron microscope. ► Focused ion beam implantation created an array of amorphous spots. ► After recrystallization, precipitates form for Ga + and Au + , dislocation loops for Si ++ . ► Controlled placement of the dislocation loops possible

  4. Experimental investigations of plasma lens focusing and plasma channel transport of heavy ion beams

    International Nuclear Information System (INIS)

    Tauschwitz, T.; Yu, S.S.; Eylon, S.; Reginato, L.; Leemans, W.; Rasmussen, J.O.; Bangerter, R.O.

    1995-04-01

    Final focusing of ion beams and propagation in a reactor chamber are crucial questions for heavy ion beam driven Fusion. An alternative solution to ballistic quadrupole focusing, as it is proposed in most reactor studies today, is the utilization of the magnetic field produced by a high current plasma discharge. This plasma lens focusing concept relaxes the requirements for low emittance and energy spread of the driver beam significantly and allows to separate the issues of focusing, which can be accomplished outside the reactor chamber, and of beam transport inside the reactor. For focusing a tapered wall-stabilized discharge is proposed, a concept successfully demonstrated at GSI, Germany. For beam transport a laser pre-ionized channel can be used

  5. Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

    Science.gov (United States)

    Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

    2012-02-01

    In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1-1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

  6. Fabrication of a negative PMMA master mold for soft-lithography by MeV ion beam lithography

    International Nuclear Information System (INIS)

    Puttaraksa, Nitipon; Unai, Somrit; Rhodes, Michael W.; Singkarat, Kanda; Whitlow, Harry J.; Singkarat, Somsorn

    2012-01-01

    In this study, poly(methyl methacrylate) (PMMA) was investigated as a negative resist by irradiation with a high-fluence 2 MeV proton beam. The beam from a 1.7 MV Tandetron accelerator at the Plasma and Beam Physics Research Facility (PBP) of Chiang Mai University is shaped by a pair of computer-controlled L-shaped apertures which are used to expose rectangular pattern elements with 1–1000 μm side length. Repeated exposure of rectangular pattern elements allows a complex pattern to be built up. After subsequent development, the negative PMMA microstructure was used as a master mold for casting poly(dimethylsiloxane) (PDMS) following a standard soft-lithography process. The PDMS chip fabricated by this technique was demonstrated to be a microfluidic device.

  7. Time-resolved measurements of the focused ion beams on PBFA II

    International Nuclear Information System (INIS)

    Mix, L.P.; Stygar, W.A.; Leeper, R.J.; Maenchen, J.E.; Wenger, D.F.

    1992-01-01

    A time-resolved camera has been developed to image the intense ion beam focus on PBFA II. Focused ions from a sector of the ion diode are Rutherford scattered from a thin gold foil on the diode axis and pinhole imaged onto an array of up to 49 PIN detectors to obtain the spatially and temporally resolved images. The signals from these detectors are combined to provide a movie of the beam focus with a time resolution of about 3 ns and a spatial resolution of 2 mm over a 12 mm field of view. Monte Carlo simulations of the camera response are used with the measured ion energy to account for the time-of-flight dispersion of the beam and to convert the recorded signals to an intensity. From measurements on an 81 degree sector of the diode, average intensities on a 6 mm sphere of about 5 TW/cm 2 and energies approaching 80 kJ/cm 2 are calculated for standard proton diodes. Corresponding numbers for a lithium diode are less than those measured with protons. The details of the analysis and image reconstruction will be presented along with scaled images from recent ion focusing experiments

  8. Aspects of the historical development of targetry for heavy ions of 0.05-2000 A centre dot MeV at GSI

    CERN Document Server

    Folger, H

    1999-01-01

    The progressively improved GSI accelerators provide beams of heavy ions from energies of 0.05-2000 A centre dot MeV at high particle intensities now. Therefore, a wide variety of common and new heavy-ion target techniques had to be installed and developed during the past 25 years to prepare and characterize self-supported or backed heavy-ion-targets of chemical elements and compounds from hydrogen (as polyethylene) to uranium. The thickness ranged from 2x10 sup - sup 6 to 20 g/cm sup 2 for beam spots of about 5 mm in diameter. Homogeneity, surface structure or individual shape had to be adapted to the needs of each experiment. Special setups were required for targets of poisonous materials, of highly enriched stable isotopes or those of radioactive species in minute amounts. The capability of thin-layer technologies was as well applied to prepare and measure stripper foils or various high-vacuum deposits for experimental or accelerator purposes. The development of different rotating target wheels and control ...

  9. Effects of 60 MeV C5+ ion irradiation on PmT-PVC and p-TSA doped PoT-PVC blends

    International Nuclear Information System (INIS)

    Lakshmi, G.B.V.S.; Siddiqui, Azher M.; Ali, Vazid; Kulriya, Pawan K.; Zulfequar, M.

    2008-01-01

    Poly(m-toluidine) (PmT) and Poly(o-toluidine) (PoT) have been synthesized from derivatives of aniline (m-toluidine), (o-toluidine) monomers by chemical oxidative polymerization method. After polymerization, PoT powder was doped with p-toluene sulphonic acid (p-TSA) and the polymer powders were blended with poly vinyl chloride (PVC) to achieve PmT and p-TSA doped PoT dispersed films. XRD, FTIR and UV-visible studies were carried out to get their structural changes and optical information. These blends were irradiated by 60 MeV C 5+ ions with different fluences. Post Irradiation XRD, FTIR and UV-visible spectroscopy were also performed on all films. On p-TSA doped PoT-PVC blends dc-conductivity measurements are also carried out before and after irradiation. The results show structural modifications which lead to changes in optical and electrical properties

  10. Interplanetary ions during an energetic storm particle event - The distribution function from solar wind thermal energies to 1.6 MeV

    Science.gov (United States)

    Gosling, J. T.; Asbridge, J. R.; Bame, S. J.; Feldman, W. C.; Zwickl, R. D.; Paschmann, G.; Sckopke, N.; Hynds, R. J.

    1981-01-01

    An ion velocity distribution function of the postshock phase of an energetic storm particle (ESP) event is obtained from data from the ISEE 2 and ISEE 3 experiments. The distribution function is roughly isotropic in the solar wind frame from solar wind thermal energies to 1.6 MeV. The ESP event studied (8/27/78) is superposed upon a more energetic particle event which was predominantly field-aligned and which was probably of solar origin. The observations suggest that the ESP population is accelerated directly out of the solar wind thermal population or its quiescent suprathermal tail by a stochastic process associated with shock wave disturbance. The acceleration mechanism is sufficiently efficient so that approximately 1% of the solar wind population is accelerated to suprathermal energies. These suprathermal particles have an energy density of approximately 290 eV cubic centimeters.

  11. Bright focused ion beam sources based on laser-cooled atoms

    Science.gov (United States)

    McClelland, J. J.; Steele, A. V.; Knuffman, B.; Twedt, K. A.; Schwarzkopf, A.; Wilson, T. M.

    2016-01-01

    Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga+ liquid metal ion source. In this review we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future. PMID:27239245

  12. Bright focused ion beam sources based on laser-cooled atoms

    Energy Technology Data Exchange (ETDEWEB)

    McClelland, J. J.; Wilson, T. M. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Steele, A. V.; Knuffman, B.; Schwarzkopf, A. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); zeroK NanoTech, Gaithersburg, Maryland 20878 (United States); Twedt, K. A. [Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Maryland Nanocenter, University of Maryland, College Park, Maryland 20742 (United States)

    2016-03-15

    Nanoscale focused ion beams (FIBs) represent one of the most useful tools in nanotechnology, enabling nanofabrication via milling and gas-assisted deposition, microscopy and microanalysis, and selective, spatially resolved doping of materials. Recently, a new type of FIB source has emerged, which uses ionization of laser cooled neutral atoms to produce the ion beam. The extremely cold temperatures attainable with laser cooling (in the range of 100 μK or below) result in a beam of ions with a very small transverse velocity distribution. This corresponds to a source with extremely high brightness that rivals or may even exceed the brightness of the industry standard Ga{sup +} liquid metal ion source. In this review, we discuss the context of ion beam technology in which these new ion sources can play a role, their principles of operation, and some examples of recent demonstrations. The field is relatively new, so only a few applications have been demonstrated, most notably low energy ion microscopy with Li ions. Nevertheless, a number of promising new approaches have been proposed and/or demonstrated, suggesting that a rapid evolution of this type of source is likely in the near future.

  13. Measurement of stopping powers of gases for heavy ions of 3 to 13 MeV by nucleon

    International Nuclear Information System (INIS)

    Orliange, I.

    1985-09-01

    The stopping powers of gases have been measured for incident 10 Ne, 18 Ar, 29 Cu, 36 Kr and 47 Ag ions of 3 to 13 MeV/u. These measurements have confirmed the existence of a gas-solid difference for the stopping powers (the stopping power of solids being larger than that of gazes). Such a difference was theoretically postulated by Bohr and Lindhard in 1954, and experimentally observed for the first time by Geissel in 1982. This effect can be qualitatively interpreted by a difference in the ion's effective charge in stopping power. However, the determination of charge state distribution for Ar and Fe ions in two particular cases (Ar + Nsub(2s)or Nsub(2g) and (Fe + Csub(s) or Csub(g)) from a theoric model and experimental cross sections for atomic collisions don't quantitatively account for observed differences [fr

  14. 1. contribution of the dynamics on the reactions mechanisms in the heavy ions collisions at the intermediary energies (20-100 MeV/A) for the light systems. 2. management of radioactive wastes by new options: nuclear data measurement programme between 20 and 150 MeV; 1. role de la dynamique sur les mecanismes de reactions dans les collisions d'ions lourds aux energies intermediaires (20-100 MeV/A) pour des systemes legers. 2. gestion des dechets radioactifs par des options nouvelles: programme de mesures de donnees nucleaires entre 20 et 150 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Eudes, Ph

    2000-09-22

    The first part concerns the features of emitted charged particles in heavy ions reactions that have been studied in the framework of the semi classical Landau-Vlasov approach for the light system Ar + Al at 65 MeV/nucleon incident energy. The second part is devoted to the radioactive waste management (transmutation), but it was necessary to increase the data banks evaluated in neutrons up to 150-200 MeV and to create a data bank in protons. In the European framework it was decide to focus on three representative elements: lead (spallation target), iron (structure material) and uranium (actinide). (N.C.)

  15. 1. contribution of the dynamics on the reactions mechanisms in the heavy ions collisions at the intermediary energies (20-100 MeV/A) for the light systems. 2. management of radioactive wastes by new options: nuclear data measurement programme between 20 and 150 MeV; 1. role de la dynamique sur les mecanismes de reactions dans les collisions d'ions lourds aux energies intermediaires (20-100 MeV/A) pour des systemes legers. 2. gestion des dechets radioactifs par des options nouvelles: programme de mesures de donnees nucleaires entre 20 et 150 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Eudes, Ph

    2000-09-22

    The first part concerns the features of emitted charged particles in heavy ions reactions that have been studied in the framework of the semi classical Landau-Vlasov approach for the light system Ar + Al at 65 MeV/nucleon incident energy. The second part is devoted to the radioactive waste management (transmutation), but it was necessary to increase the data banks evaluated in neutrons up to 150-200 MeV and to create a data bank in protons. In the European framework it was decide to focus on three representative elements: lead (spallation target), iron (structure material) and uranium (actinide). (N.C.)

  16. K vacancy production in collisions of 63 MeV Cu ions with Ge and Ag atoms

    International Nuclear Information System (INIS)

    Frank, W.; Jaracz, R.; Kaun, K.-H.; Rudiger, J.; Stachura, Z.

    1980-01-01

    The mechanism of K-shell vacancy production is studied in t in an X-ray-scattered ion coincidence experiment with 1 MeV/a.m.u. 63 Cu 4+ ion incident onto natural Ge and Ag targets. The impact parameter dependent K-shell vacancy production probability measured in the experiment is interpreted in terms of the rotational coupling and the statistical models. The dependence of the vacancy sharing process in the Cu-Ge collision system on the impact parameter is obtained and compared with the predictions of the Briggs-Myerhof-Demkov model

  17. Intense ion beam generator

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Sudan, R.N.

    1977-01-01

    Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation

  18. Plasma lens focusing and plasma channel transport for heavy ion fusion

    International Nuclear Information System (INIS)

    Tauschwitz, A.; Yu, S.S.; Bangerter, R.O.

    1996-01-01

    The final focus lens in an ion beam driven inertial confinement fusion reactor is important since it sets limiting requirements for the quality of the driver beam. Improvements of the focusing capabilities can facilitate the construction of the driver significantly. A focusing system that is of interest both for heavy ion and for light ion drivers is an adiabatic, current carrying plasma lens. This lens is characterized by the fact that it can slowly (adiabatically) reduce the envelope radius of a beam over several betatron oscillations by increasing the focusing magnetic field along a tapered high current discharge. A reduction of the beam diameter by a factor of 3 to 5 seems feasible with this focusing scheme. Such a lens can be used for an ignition test facility where it can be directly coupled to the fusion target. For use in a repetitively working reactor chamber the lens has to be located outside of the reactor and the tightly focused but strongly divergent beam must be confined in a high current transport channel from the end of the lens into the immediate vicinity of the target. Laser preionization of a background gas is an efficient means to direct and stabilize such a channel. Experiments have been started to test both, the principle of adiabatic focusing, and the stability of laser preionized high current discharge channels. (author). 4 figs., 7 refs

  19. Plasma lens focusing and plasma channel transport for heavy ion fusion

    Energy Technology Data Exchange (ETDEWEB)

    Tauschwitz, A; Yu, S S; Bangerter, R O [Lawrence Berkeley Lab., CA (United States); and others

    1997-12-31

    The final focus lens in an ion beam driven inertial confinement fusion reactor is important since it sets limiting requirements for the quality of the driver beam. Improvements of the focusing capabilities can facilitate the construction of the driver significantly. A focusing system that is of interest both for heavy ion and for light ion drivers is an adiabatic, current carrying plasma lens. This lens is characterized by the fact that it can slowly (adiabatically) reduce the envelope radius of a beam over several betatron oscillations by increasing the focusing magnetic field along a tapered high current discharge. A reduction of the beam diameter by a factor of 3 to 5 seems feasible with this focusing scheme. Such a lens can be used for an ignition test facility where it can be directly coupled to the fusion target. For use in a repetitively working reactor chamber the lens has to be located outside of the reactor and the tightly focused but strongly divergent beam must be confined in a high current transport channel from the end of the lens into the immediate vicinity of the target. Laser preionization of a background gas is an efficient means to direct and stabilize such a channel. Experiments have been started to test both, the principle of adiabatic focusing, and the stability of laser preionized high current discharge channels. (author). 4 figs., 7 refs.

  20. Intense electron-beam transport in the ion-focused regime through the collision-dominated regime

    International Nuclear Information System (INIS)

    Sanford, T.W.L.; Poukey, J.W.; Welch, D.R.; Mock, R.C.

    1993-01-01

    This paper reviews the transport of the 19-MeV, 700-kA, 25-ns Hermes-III electron beam in long gas cells filled with N 2 gas spanning six decades in pressure from 10 3 to ∼10 3 Torr. We show through measurements and theoretical analyses that the beam has two windows of stable transport: a low-pressure window (between ∼1 and ∼100 mTorr) that is dominated by propagation in the semi-collisionless IFR (ion-focused regime), and a high-pressure window (between ∼1 and ∼100 Torr) that is dominated by propagation in the resistive CDR (collision-dominated regime). In the CDR, 79±1.5% of the beam energy is transported over 11 m at 20 Torr. In the IFR, we show that intense radiation fields with controllable rise times and pulse widths can be generated on axis at a bremsstrahlung target. In summary, the measurements and analyses presented here provide a quantitative description of the Hermes-III beam transport over six decades in pressure

  1. Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

    International Nuclear Information System (INIS)

    Himics, L.; Tóth, S.; Veres, M.; Tóth, A.; Koós, M.

    2015-01-01

    Highlights: • Characteristics of nitrogen implantation of nanodiamond using two low ion energy ion implantation methods were compared. • Formation of complex nitrogen-related defect centers was promoted by subsequent helium implantation and heat treatments. • Depth profiles of the implanted ions and the generated vacancies were determined using SRIM calculations. • The presence of nitrogen impurity was demonstrated by Fourier-transform infrared spectroscopic measurements. • A new nitrogen related band was detected in the photoluminescence spectrum of the implanted samples that was attributed to the N3 color center in nanodiamond. - Abstract: Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750 °C, 450 °C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp 2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation

  2. Aberrations due to solenoid focusing of a multiply charged high-current ion beam

    CERN Document Server

    Grégoire, G; Lisi, N; Schnuriger, J C; Scrivens, R; Tambini, J

    2000-01-01

    At the output of a laser ion source, a high current of highly charged ions with a large range of charge states is available. The focusing of such a beam by magnetic elements causes a nonlinear space-charge field to develop which can induce large aberrations and emittance growth in the beam. Simulation of the beam from the CERN laser ion source will be presented for an ideal magnetic and electrostatic system using a radially symmetric model. In addition, the three dimensional software KOBRA3 is used for the simulation of the solenoid line. The results of these simulations will be compared with experiments performed on the CERN laser ion source with solenoids (resulting in a hollow beam) and a series of gridded electrostatic lenses. (5 refs).

  3. The thermal evolution of targets under plasma focus pulsed ion implantation

    International Nuclear Information System (INIS)

    Sanchez, G.; Feugeas, J.

    1997-01-01

    Pulsed ion beam implantation with plasma focus has proved to be an effective method of metal surface treatment for tribological purposes. Nevertheless, the pulsed nature and the continuous energy spectrum of the ion beams differ from those of the standard ion implantation processes. In this paper a model of the thermal evolution of the surface layers of stainless steel, titanium and copper, during and after nitrogen and argon ion beam incidence, is presented using the finite-difference method. In the calculations, the geometry and physical characteristics of the ion beams, the single-ion-solid interaction process and the thermal properties of the materials were used. The results showed a strong thermal effect consisting in the generation of transitory heating slopes and heating speeds as high as ∼3600 K μm -1 and ∼40 K ns -1 respectively, with maximum temperatures that can reach even the material evaporation point at the surface layers. The cooling down process, through the thermal conduction mechanism at the target bulk, turns out to be fast enough to produce the complete thermal relaxation of the target in only a few microseconds after the end of the ion beam incidence. The results presented are contrasted with experiments performed in similar conditions to those used in the numerical model. (Author)

  4. Nature of gallium focused ion beam induced phase transformation in 316L austenitic stainless steel

    International Nuclear Information System (INIS)

    Babu, R. Prasath; Irukuvarghula, S.; Harte, A.; Preuss, M.

    2016-01-01

    The microstructural evolution and chemistry of the ferrite phase (α), which transforms from the parent austenite phase (γ) of 316L stainless steel during gallium (Ga) ion beam implantation in Focused Ion Beam (FIB) instrument was systematically studied as a function of Ga"+ ion dose and γ grain orientations. The propensity for initiation of γ → α phase transformation was observed to be strongly dependent on the orientation of the γ grain with respect to the ion beam direction and correlates well with the ion channelling differences in the γ orientations studied. Several α variants formed within a single γ orientation and the sputtering rate of the material, after the γ → α transformation, is governed by the orientation of α variants. With increased ion dose, there is an evolution of orientation of the α variants towards a variant of higher Ga"+ channelling. Unique topographical features were observed within each specific γ orientation that can be attributed to the orientation of defects formed during the ion implantation. In most cases, γ and α were related by either Kurdjumov-Sachs (KS) or Nishiyama-Wassermann (NW) orientation relationship (OR) while in few, no known OR's were identified. While our results are consistent with gallium enrichment being the cause for the γ → α phase transformation, some observations also suggest that the strain associated with the presence of gallium atoms in the lattice has a far field stress effect that promotes the phase transformation ahead of gallium penetration.

  5. An angled nano-tunnel fabricated on poly(methyl methacrylate) by a focused ion beam

    International Nuclear Information System (INIS)

    Her, Eun Kyu; Chung, Hee-Suk; Oh, Kyu Hwan; Moon, Myoung-Woon

    2009-01-01

    Angled nano-scale tunnels with high aspect ratio were fabricated on poly(methyl methacrylate) (PMMA) using a focused ion beam (FIB). The fabrication parameters such as ion fluence, incidence angle, and acceleration voltage of the Ga + ion beam were first studied on the PMMA surface to explore the formation of the nano-scale configurations such as nano-holes and cones with diameter in the range of 50-150 nm at an ion beam acceleration voltage of 5-20 kV. It was also found that the PMMA surface exposed to FIB was changed into an amorphous graphitic structure. Angled nano-scale tunnels were fabricated with high aspect ratio of 700-1500 nm in depth and 60 nm in mean diameter at an ion beam acceleration voltage of 5 kV and under a specific ion beam current. The angle of the nano-tunnels was found to follow the incident angle of the ion beam tilted from 0 0 to 85 0 , which has the potential for creating a mold for anisotropic adhesives by mimicking the hairs on a gecko's feet.

  6. A compact broadband ion beam focusing device based on laser-driven megagauss thermoelectric magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Albertazzi, B., E-mail: bruno.albertazzi@polytechnique.edu [LULI, École Polytechnique, CNRS, CEA, UPMC, 91128 Palaiseau (France); INRS-EMT, Varennes, Québec J3X 1S2 (Canada); Graduate School of Engineering, Osaka University, Suita, Osaka 565-087 (Japan); D' Humières, E. [CELIA, Universite de Bordeaux, Talence 33405 (France); Department of Physics, University of Nevada, Reno, Nevada 89557 (United States); Lancia, L.; Antici, P. [Dipartimento SBAI, Universita di Roma “La Sapienza,” Via A. Scarpa 16, 00161 Roma (Italy); Dervieux, V.; Nakatsutsumi, M.; Romagnani, L.; Fuchs, J., E-mail: Julien.fuchs@polytechnique.fr [LULI, École Polytechnique, CNRS, CEA, UPMC, 91128 Palaiseau (France); Böcker, J.; Swantusch, M.; Willi, O. [Institut für Laser- und Plasmaphysik, Heinrich-Heine-Universität, Düsseldorf D-40225 (Germany); Bonlie, J.; Cauble, B.; Shepherd, R. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States); Breil, J.; Feugeas, J. L.; Nicolaï, P.; Tikhonchuk, V. T. [CELIA, Universite de Bordeaux, Talence 33405 (France); Chen, S. N. [LULI, École Polytechnique, CNRS, CEA, UPMC, 91128 Palaiseau (France); Lawrence Livermore National Laboratory, Livermore, California 94551 (United States); Sentoku, Y. [Department of Physics, University of Nevada, Reno, Nevada 89557 (United States); and others

    2015-04-15

    Ultra-intense lasers can nowadays routinely accelerate kiloampere ion beams. These unique sources of particle beams could impact many societal (e.g., proton-therapy or fuel recycling) and fundamental (e.g., neutron probing) domains. However, this requires overcoming the beam angular divergence at the source. This has been attempted, either with large-scale conventional setups or with compact plasma techniques that however have the restriction of short (<1 mm) focusing distances or a chromatic behavior. Here, we show that exploiting laser-triggered, long-lasting (>50 ps), thermoelectric multi-megagauss surface magnetic (B)-fields, compact capturing, and focusing of a diverging laser-driven multi-MeV ion beam can be achieved over a wide range of ion energies in the limit of a 5° acceptance angle.

  7. Double excitation of helium by ion impact. 2: Experiment and theory for 2-3 MeV proton impact

    Energy Technology Data Exchange (ETDEWEB)

    Bordenave-Montesquieu, A.; Moretto-Capelle, P.; Gleizes, A. [Toulouse-3 Univ., 31 (France); Andriamonje, S. [Bordeaux-1 Univ., 33 - Gradignan (France). Centre d`Etudes Nucleaires]|[Institut National de Physique Nucleaire et Physique des Particules, 33 - Gradignan (France); Martin, F. [Universidad Autonoma de Madrid (Spain). Dept. de Quimica; Salin, A. [Bordeaux-1 Univ., 33 -Talence (France). Lab. des Collisions Atomiques

    1995-02-28

    Experimental and theoretical studies of the double excitation of helium by 2-3 MeV proton impact are presented. A detailed angular dependence of the lineshapes and intensities of the first 2l2l` resonances is discussed. The resonances are characterized by the Shore parameters A and B and the Fano parameter Q. Calculations within Born-I approximation describe approximately the excitation of the 2s{sup 2} {sup 1}S and 2s2p {sup 1}P resonances whereas they fail to reproduce the experimental findings for the 2p{sup 2} {sup 1}D one. On the other hand, close-coupling calculations improve the description of the excitation of the 2s2p{sup 1}P and explains very nicely the 2p{sup 2} {sup 1}D one. Weak discrepancies in the description of the 2s{sup 2} {sup 1}S and 2s2p {sup 1}P excitation in the forward direction are thought to be the signature of a residual post-collisional effect. It is shown that it does not affect the observed lineshapes in our collision velocity range. The integration of the resonance parameters over the emission angle of the electron allows us to deduce total electron yields and to connect the resulting profile with photoionization data. (author).

  8. Investigation of morphological, structural, and mechanical characteristics of Zircaloy-4 irradiated with 3.5 MeV hydrogen ions beam

    Science.gov (United States)

    Rafique, Mohsin; Butt, M. Z.; Ahmad, Sajjad

    2017-09-01

    Zircaloy-4 specimens were irradiated with 3.5 MeV hydrogen ions (dose range: 1  ×  1013 H+1 cm-2 to 1  ×  1015 H+1 cm-2) using a Pelletron accelerator. FESEM studies reveal formation of hydrogen micro-bubbles, bubbles induced blisters of irregular shapes, and development of cracks on the specimen surface, as in the case of pure zirconium. However, for the highest irradiation dose of 1  ×  1015 H+1 cm-2, agglomeration of flower-shape blisters is observed. XRD analysis shows that the most preferentially oriented crystallographic plane is (0 0 4) with texture coefficient values 1.832-2.308 depending on the ions dose. Its diffraction peak intensity first decreases with the increase in ions dose up to 5  ×  1013 H+1 cm-2 and later increases up to 1  ×  1015 H+1 cm-2. Opposite is found in case of diffraction peak width. Crystallite size and lattice strain determined by Williamson-Hall analysis display a linear relationship between the two with positive slope. Mechanical strength, namely yield stress (YS), ultimate tensile strength (UTS), and fracture stress (FS), increases sharply with ions dose up to 5  ×  1013 H+1 cm-2. For 1  ×  1014 H+1 cm-2 dose there is a sudden drop of stress to a lowest value and then a slow steady increase in stress up to the highest dose 1  ×  1015 H+1 cm-2. Same pattern is followed by uniform elongation and total elongation. All three stress parameters YS, UTS, and FS follow Inverse Hall-Petch relation.

  9. 160 MeV Ni{sup 12+} ion irradiation effects on the structural, optical and electrical properties of spherical polypyrrole nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Hazarika, J.; Kumar, A., E-mail: ask@tezu.ernet.in

    2014-01-01

    Highlights: • Upon SHI irradiation the average diameters of PPy nanoparticles increases. • Crystallinity of PPy nanoparticles increases with increasing ion fluence. • IR active vibrational bands have different cross sections for SHI irradiation. • Upon SHI irradiation optical band gap energy of PPy nanoparticles decreases. • Upon SHI irradiation thermal stability of PPy nanoparticles increases. -- Abstract: In this study we report 160 MeV Ni{sup 12+} swift heavy ion irradiation induced enhancement in the structural, optical and electrical properties of spherical polypyrrole (PPy) nanoparticles. High resolution transmission electron microscope results show that the pristine PPy nanoparticles have an average diameter of 11 nm while upon irradiation the average diameter increases to 18 nm at the highest ion fluence of 1 × 10{sup 12} ions/cm{sup 2}. X-ray diffraction studies show an enhancement of crystallinity and average crystallite size of PPy nanoparticles with increasing fluence. Studies of Fourier transform infrared spectra suggest the structural modifications of different functional groups upon irradiation. It also reveals that different functional groups have different sensitivity to irradiation. The infrared active N–H vibrational band at 3695 cm{sup −1} is more sensitive to irradiation with a formation cross-section of 5.77 × 10{sup −13} cm{sup 2} and effective radius of 4.28 nm. The UV–visible absorption spectra of PPy nanoparticles show that the absorption band undergoes a red shift with increasing fluence. Moreover upon irradiation the optical band gap energy decreases and Urbach’s energy increases with fluence. Thermo-gravimetric analysis studies suggest that upon irradiation the thermal stability of PPy nanoparticles increases which may be attributed to their enhanced crystallinity. Current–voltage characteristics of PPy nanoparticles exhibit non-Ohmic, symmetric behavior which increases with fluence.

  10. High definition aperture probes for near-field optical microscopy fabricated by focused ion beam milling

    NARCIS (Netherlands)

    Veerman, J.A.; Otter, A.M.; Kuipers, L.; van Hulst, N.F.

    1998-01-01

    We have improved the optical characteristics of aluminum-coated fiber probes used in near-field scanning optical microscopy by milling with a focused ion beam. This treatment produces a flat-end face free of aluminum grains, containing a well- defined circularly-symmetric aperture with controllable

  11. Ultra-high aspect ratio replaceable AFM tips using deformation-suppressed focused ion beam milling

    DEFF Research Database (Denmark)

    Savenko, Alexey; Yildiz, Izzet; Petersen, Dirch Hjorth

    2013-01-01

    Fabrication of ultra-high aspect ratio exchangeable and customizable tips for atomic force microscopy (AFM) using lateral focused ion beam (FIB) milling is presented. While on-axis FIB milling does allow high aspect ratio (HAR) AFM tips to be defined, lateral milling gives far better flexibility...

  12. Focused-ion-beam nano-structuring of photonic cavities in dielectric materials

    NARCIS (Netherlands)

    Ay, F.; Pollnau, Markus

    Focused ion beam (FIB) milling is an emerging technology that enables fast, reliable and well-controlled nanometer-size feature definition. In this work we will discuss applications of the tool in the area of photonics. The FIB technique can be adapted and optimized almost for any material system

  13. Nano-tomography of porous geological materials using focused ion beam-scanning electron microscopy

    NARCIS (Netherlands)

    Liu, Yang; King, Helen E.; van Huis, Marijn A.; Drury, Martyn R.; Plümper, Oliver

    2016-01-01

    Tomographic analysis using focused ion beam-scanning electron microscopy (FIB-SEM) provides three-dimensional information about solid materials with a resolution of a few nanometres and thus bridges the gap between X-ray and transmission electron microscopic tomography techniques. This contribution

  14. A study of the degradation of polymers irradiated by Cn+ and On+ 9.6 MeV heavy ions

    Czech Academy of Sciences Publication Activity Database

    Mikšová, Romana; Macková, Anna; Malinský, Petr; Slepička, P.; Švorčík, V.

    2015-01-01

    Roč. 122, DEC (2015), s. 110-121 ISSN 0141-3910 R&D Projects: GA MŠk LM2011019; GA ČR GA15-01602S Institutional support: RVO:61389005 Keywords : energy loss * heavy ions * polymers * RBS/ERDA methods * AFM method Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 3.120, year: 2015

  15. Compositional, structural, and optical changes of polyimide implanted by 1.0 MeV Ni+ ions

    Czech Academy of Sciences Publication Activity Database

    Mikšová, Romana; Macková, Anna; Pupíková, Hana; Malinský, Petr; Slepička, P.; Švorčík, V.

    2017-01-01

    Roč. 406, SEP (2017), s. 199-204 ISSN 0168-583X R&D Projects: GA MŠk LM2015056; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : Ni ion implantation * polyimide * polymer degradation Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.109, year: 2016

  16. Development of high performance negative ion sources and accelerators for MeV class neutral beam injectors

    International Nuclear Information System (INIS)

    Taniguchi, M.; Hanada, M.; Iga, T.

    2003-01-01

    Operation of accelerator at low pressure is an essential requirement to reduce stripping loss of the negative ions, which in turn results in high efficiency of the NB systems. For this purpose, a vacuum insulated beam source (VIBS) has been developed at JAERI, which reduces the gas pressure in the accelerator by enhanced gas conductance through the accelerator. The VIBS achieves the high voltage insulation of 1 MV by immersing the whole structure of accelerator in vacuum with long (∼ 1.8 m) insulation distance. Results of the voltage holding test using a long vacuum gap of 1.8 m indicate that a transition from vacuum discharge to gas discharge occurs at around 0.2 Pa m in the long vacuum gap. So far, the VIBS succeeded in acceleration of 20 mA (H - ) beam up to 970 keV for 1 s. The high voltage holding capability of the VIBS was drastically improved by installing a new large stress ring, which reduces electric field concentration at the triple junction of the accelerator column. At present the VIBS sustains 1 MV stably for more than 1200 s. Acceleration of ampere class H- beams at high current density is to be started soon to demonstrate ITER relevant beam optics. Operation of negative ion source at low pressure is also essential to reduce the stripping loss. However, it was not so easy to attain high current density H - ions at low pressure, since destruction cross section of the negative ions becomes large if the electron temperature is > 1 eV, in low pressure discharge. Using strong magnetic filter to lower the electron temperature, and putting higher arc discharge power to compensate reduction of plasma density through the filter, an H - ion beam of 310 A/m 2 was extracted at very low pressure of 0.1Pa. This satisfies the ITER requirement of current density at 1/3 of the ITER design pressure (0.3 Pa). (author)

  17. Comparison of physics model for 600 MeV protons 290 MeV·{sup n-}1 oxygen ions on carbon in MCNPX

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Arim; Kim, Dong Hyun; Jung, Nam Suk; Oh, Joo Hee [Pohang Accelerator Laboratory, POSTECH, Pohang (Korea, Republic of); Oranj, Leila Mokhtari [Pohang University of Science and Technology, Pohang (Korea, Republic of)

    2016-06-15

    With the increase in the number of particle accelerator facilities under either operation or construction, the accurate calculation using Monte Carlo codes become more important in the shielding design and radiation safety evaluation of accelerator facilities. The calculations with different physics models were applied in both of cases: using only physics model and using the mix and match method of MCNPX code. The issued conditions were the interactions of 600 MeV proton and 290 MeV·{sup n-}1 oxygen with a carbon target. Both of cross-section libraries, JENDL High Energy File 2007 (JENDL/HE-2007) and LA150, were tested in this calculation. In the case of oxygen ion interactions, the calculation results using LAQGSM physics model and JENDL/HE-2007 library were compared with D. Satoh's experimental data. Other Monte Carlo calculations using PHITS and FLUKA codes were also carried out for further benchmarking study. It was clearly found that the physics models, especially intra-nuclear cascade model, gave a great effect to determine proton-induced secondary neutron spectrum in MCNPX code. The variety of physics models related to heavy ion interactions did not make big difference on the secondary particle productions. The variations of secondary neutron spectra and particle transports depending on various physics models in MCNPX code were studied and the result of this study can be used for the shielding design and radiation safety evaluation.

  18. Modification of structural and magnetic properties of soft magnetic multi-component metallic glass by 80 MeV {sup 16}O{sup 6+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kane, S.N., E-mail: kane_sn@yahoo.com [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Shah, M.; Satalkar, M.; Gehlot, K. [School of Physics, D.A. University, Khandwa Road Campus, Indore 452001 (India); Kulriya, P.K.; Avasthi, D.K. [Inter-University Accelerator Centre, P.O. Box No. 10502, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.K. [Raja Ramanna Centre for Advanced Technology, P.O. CAT, Indore 452013 (India); Modak, S.S. [Physics Department, Jaypee University of Eng. & Tech., A-B Road, Raghogarh, Guna 473226 (India); Ghodke, N.L.; Reddy, V.R. [UGC-DAE CSR, University Campus, Khandwa Road, Indore 452001 (India); Varga, L.K. [RISSPO, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2016-07-15

    Effect of 80 MeV {sup 16}O{sup 6+} ion irradiation in amorphous Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy is reported. Electronic energy loss induced modifications in the structural and, magnetic properties were monitored by synchrotron X-ray diffraction (SXRD), Mössbauer and, magnetic measurements. Broad amorphous hump seen in SXRD patterns reveals the amorphous nature of the studied specimens. Mössbauer measurements suggest that: (a) alignment of atomic spins within ribbon plane, (b) changes in average hyperfine field suggests radiation-induced decrease in the inter atomic distance around Mössbauer (Fe) atom, (c) hyperfine field distribution confirms the presence of non-magnetic elements (e.g. – B, P, C) in the first near-neighbor shell of the Fe atom, thus reducing its magnetic moment, and (d) changes in isomer shift suggests variation in average number of the metalloid near neighbors and their distances. Minor changes in soft magnetic behavior – watt loss and, coercivity after an irradiation dose of 2 × 10{sup 13} ions/cm{sup 2} suggests prospective application of Fe{sub 77}P{sub 8}Si{sub 3}C{sub 5}Al{sub 2}Ga{sub 1}B{sub 4} alloy as core material in accelerators (radio frequency cavities).

  19. An analytically-based method for rapid evaluation of MeV ion loss in tokamaks with low-n perturbations

    International Nuclear Information System (INIS)

    Mynick, H.E.

    1993-01-01

    Recent work has developed an analytic theory for the stochastic transport of passing MeV ions due to low-n magnetic perturbations, valid for frequencies from ω = 0 to ω ∼ ω TAE ∼ 100 kHz, and for modes with multiple harmonics and nontrivial radial structure, which predicts stochastic thresholds in agreement with guiding-center (GC) results. Obtaining GC results is time consuming, typically requiring hours of computer time to obtain loss results for a single point in parameter space. Along with earlier theory developed for the stochastic transport of trapped particles in such perturbations, this theory gives the basis for a far more rapid means of numerically assessing energetic ion loss in a given configuration, somewhat akin to the RIPLOS code for rapid evaluation of loss due to TF ripple. The authors present the details of implementing such a code, now being developed. The implementation also raises some further theoretical issues. The currently available stochastic thresholds for passing and trapped particles are not the same, and an analytic understanding of the transition between them awaits development

  20. Study of the multi-fragment production in asymmetric heavy ion reactions at E/A = 600 MeV

    International Nuclear Information System (INIS)

    Hubele, J.C.

    1992-03-01

    In this thesis the fragmentation of Au projectiles in collisions with light target nuclei ( 12 C, 27 Al, 64 Cu) is studied at a projectile energy of 600 MeV per nucleon. For the description of an event three observables are used: the multiplicity M lp of the light particles, the largest observed charge Z max of the projectile fragments, as well as a newly introduced obsevable Z bound , which is defined as the sum of all charge contained in complex projectile fragments (Z ≥ 2). By means of this observable different exit channels can be identified: the formation of a heavy residual nucleus by evaporation of light particles, the binary fission, the decay into IMF's (3 ≤ Z ≤ 30) and the complete decay into light particles. At the applied incident energy in the case of Au+Cu reactions each of these decay channels can be realized. The observables Z bound and M lpp are proved as suited quantities for the reconstruction of the impact parameter. Furthermore independently on the target a universal relation between Z bound and the multiplicity distribution of medium-heavy fragments is found. By simple model assumptions it is made plausible that Z bound is correlated both with the size of the projectile residue and in the mean with its excitation energy. For the characterization of the decay into IMF's the multiplicity M imf of these fragments is applied. For all three targets with increasing centrality first an increasing of the mean fragment multiplicities to maximal values of 3-4 is observed. In the case of the Cu target and suggestively also at the Al target in the most central collisions again a decreasing of the multiplicity is found. The universal Z bound behaviour is a hint to a - at least partial - equilibration of the primary projectile residue before the decay. (HSI) [de

  1. High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, M.; Musumeci, P.; Zimbone, M.; Torrisi, L.; La Via, F.; Margarone, Daniele; Velyhan, Andriy; Ullschmied, Jiří; Calcagno, L.

    2013-01-01

    Roč. 28, č. 1 (2013), s. 87-93 ISSN 0884-2914 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE.2.3.20.0087 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : silicon carbide * ion detectors * high power laser Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.815, year: 2013

  2. Collisions of highly stripped ions at MeV energies in gas targets: charge transfer and ionization

    International Nuclear Information System (INIS)

    Schlachter, A.S.

    1980-01-01

    Cross sections have been measured for charge transfer and ionization in H 2 and rare-gas targets by fast, highly ionized carbon, iron, niobium, and lead ions in charge states +3 to +59, with energies in the range 0.1 to 4.8 MeV/amu. Experimental results are compared with classical-trajectory calculations; agreement is generally good. For a given target, the cross sections for net ionization reduce to a common curve when plotted as cross section divided by charge state versus energy per nucleon divided by charge state

  3. Ion beam transport and focus for LMF using an achromatic solenoidal lens system

    International Nuclear Information System (INIS)

    Olson, C.L.

    1990-01-01

    The light ion LMF (Laboratory Microfusion Facility) requires an ion beam transport length for bunching and standoff to be about four meters from the diode to the target. The baseline LMF transport scheme uses an achromatic two lens system consisting of the diode (a self-field lens) and a solenoidal lens. Charge and current neutralization are provided by a background gas. A detailed analysis of this system is presented here. The effects of additional magnetic fields are examined, including those produced by non-zero net currents, applied B effects near the diode, and diamagnetic effects in the solenoidal lens. Instabilities are analyzed including the filamentation instability, the two-stream instability (beam ions, plasma electrons), the plasma two-stream instability (plasma electrons, plasma ions), and the ion acoustic instability. Scattering in the foil and gas are shown to be negligible. Gas breakdown processes are analyzed in detail, including ion impact ionization, electron avalanching, and ohmic heating. Special diode requirements are examined, including voltage accuracy, energy spread, and aiming tolerances. The neutral gas and gas pressure are chosen to satisfy several constraints, one being that the net current must be small, and another being that the filamentation instability should be avoided. With the present choice of 1 Torr He, it is concluded that the complete achromatic lens system appears to be viable, simple, and efficient transport and focusing system for LMF

  4. Interplanetary ions during an energetic storm particle event: The distribution function from solar wind thermal energies to 1.6 MeV

    International Nuclear Information System (INIS)

    Gosling, J.T.; Asbridge, J.R.; Bame, S.J.; Feldman, W.C.; Zwickl, R.D.; Paschmann, G.; Sckopke, N.; Hynds, R.J.

    1981-01-01

    Data from the Los Alamos Scientific Laboratory/Max-Planck-Institut fast plasma experiment on Isee 2 have been combined with data from the European Space Agency/Imperial College/Space Research Laboratory low-energy proton experiment on Isee 3 to obtain for the first time an ion velocity distribution function f(v) extending from solar wind energies (-1 keV) to 1.6 MeV during the postshock phase of an energetic storm particle (ESP) event. This study reveals that f(v) of the ESP population is roughly isotropic in the solar wind frame from solar wind thermal energies out to 1.6 MeV. Emerging smoothly out of the solar wind thermal distribution, the ESP f(v) initially falls with increasing energy as E/sup -2.4/ in the solar wind frame. Above about 40 keV no single power law exponent adequately describes the energy dependence of f(v) in the solar wind frame. Above approx.200 keV in both the spacecraft frame and the solar wind frame, f(v) can be described by an exponential in speed (f(v)proportionale/sup -v/v//sub o/) with v/sub o/ = 1.05 x 10 8 cm s -1 . The ESP event studied (August 27, 1978) was superposed upon a more energetic particle event which was predominantly field-aligned and which was probably of solar origin. Our observations suggest that the ESP population is accelerated directly out of the solar wind thermal population or its quiescent suprathermal tail by a stochastic process associated with the shock wave disturbance. The acceleration mechanism is sufficiently efficient that approx.1% of the solar wind population is accelerated to suprathermal energies. These suprathermal particles have an energy density of approx.290 eV cm -3

  5. Phase stability of zirconium oxide films during focused ion beam milling

    Science.gov (United States)

    Baxter, Felicity; Garner, Alistair; Topping, Matthew; Hulme, Helen; Preuss, Michael; Frankel, Philipp

    2018-06-01

    Focused ion beam (FIB) is a widely used technique for preparation of electron transparent samples and so it is vital to understand the potential for introduction of FIB-induced microstructural artefacts. The bombardment of both Xe+ and Ga+ ions is observed to cause extensive monoclinic to tetragonal phase transformation in ZrO2 corrosion films, however, this effect is diminished with reduced energy and is not observed below 5 KeV. This study emphasises the importance of careful FIB sample preparation with a low energy cleaning step, and also gives insight into the stabilisation mechanism of the tetragonal phase during oxidation.

  6. Preparation of MgB2 superconducting microbridges by focused ion beam direct milling

    Science.gov (United States)

    Zhang, Xuena; Li, Yanli; Xu, Zhuang; Kong, Xiangdong; Han, Li

    2017-01-01

    MgB2 superconducting microbridges were prepared by focused ion beam (FIB) direct milling on MgB2 films. The surface topography of the microbridges were observed using SEM and AFM and the superconductivity was measured in this paper. Lots of cracks and holes were found near the milled area. And the superconducting transition temperature was decreased a lot and the bridges prepared were not superconducting due to ion damage after milled with large dose. Through these works, we explored the effect regular of FIB milling and experimental parameters on the performance of microbridges.

  7. Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

    International Nuclear Information System (INIS)

    Xu Xingsheng; Chen Hongda; Xiong Zhigang; Jin Aizi; Gu Changzhi; Cheng Bingying; Zhang Daozhong

    2007-01-01

    In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed

  8. Dry fabrication of microdevices by the combination of focused ion beam and cryogenic deep reactive ion etching

    International Nuclear Information System (INIS)

    Chekurov, N; Tittonen, I; Grigoras, K; Sainiemi, L; Franssila, S; Peltonen, A

    2010-01-01

    In this paper, we demonstrate silicon microdevice fabrication by a combination of focused ion beam (FIB) and cryogenic deep reactive ion etching (DRIE). Applying FIB treatment only to a thin surface layer enables very high writing speed compared with FIB milling. The use of DRIE then defines the micro- and nanodevices utilizing the FIB-modified silicon as a mask. We demonstrate the ability to create patterns on highly 3D structures, which is extremely challenging by other nanofabrication methods. The alignment of optically made and FIB-defined patterns is also demonstrated. We also show that complete microelectromechanical systems (MEMS) can be fabricated by this method by presenting a double-ended tuning fork resonator as an example. Extremely short process time is achieved as the full fabrication cycle from mask design to electrical measurements can be completed during one working day.

  9. Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions: depth of origin and layer homogeneity

    International Nuclear Information System (INIS)

    Allali, H.; Nsouli, B.; Thomas, J.P.; Cabaud, B.; Fuchs, G.; Hoareau, A.; Treilleux, M.; Danel, J.S.

    1993-09-01

    The escape depth of the secondary ions resulting from electronic sputtering of fast heavy ions in inorganic thin films has been investigated. Chromium layers deposited onto SiO 2 substrate as well as SiO x layers deposited onto chromium substrate have been characterized by secondary ion emission mass spectrometry (SIMS) in combination with time-of-flight (TOF) mass analysis (also referred as HSF-SIMS). These crossed experiments lead to a value around 1 nm for SiO x layers and 0.5 nm for Cr layers. On the other hand, HSF-SIMS can be used to correlate the intensity of the secondary ion emission to the film coverage rate and (or) the morphology of particular films like those produced by Low Energy Cluster Beam Deposition (LECBD). Using Sb deposits, the non-linear relationship between ion emission and coverage is interpreted in terms of sputtering enhancement in the individual supported clusters. (author) 22 refs., 9 figs., 1 tab

  10. Focusing and bunching of ion beam in axial injection channel of IPHC cyclotron TR24

    Science.gov (United States)

    Adam, T.; Ivanenko, I.; Kazarinov, N.; Osswald, F.; Traykov, E.

    2017-07-01

    The CYRCe cyclotron (CYclotron pour la ReCherche et l’Enseignement) is used at IPHC (Institut Pluridisciplinaire Hubert Curien) for the production of radio-isotopes for diagnostics, medical treatments and fundamental research in radiobiology. The TR24 cyclotron produced and commercialized by ACSI (Canada) delivers a 16-25 MeV proton beam with intensity from few nA up to 500 μA. The solenoidal focusing instead of existing quadrupole one is proposed in this report. The changing of the focusing elements will give the better beam matching with the acceptance of the spiral inflector of the cyclotron. The parameters of the focusing solenoid are found. Additionally, the main parameters of the bunching system are evaluated in the presence of the beam space charge. This system consists of the buncher installed in the axial injection beam line of the cyclotron. The using of the grid-less multi harmonic buncher may increase the accelerated beam current and will give the opportunity to new proton beam applications.

  11. Optimized simultaneous transverse and longitudinal focusing of intense ion beam pulses for warm dense matter applications

    International Nuclear Information System (INIS)

    Sefkow, Adam B.; Davidson, Ronald C.; Kaganovich, Igor D.; Gilson, Erik P.; Roy, Prabir K.; Seidl, Peter A.; Yu, Simon S.; Welch, Dale R.; Rose, David V.; Barnard, John J.

    2007-01-01

    Intense, space-charge-dominated ion beam pulses for warm dense matter and heavy ion fusion applications must undergo simultaneous transverse and longitudinal bunch compression in order to meet the requisite beam intensities desired at the target. The longitudinal compression of an ion bunch is achieved by imposing an initial axial velocity tilt on the drifting beam and subsequently neutralizing its space-charge and current in a drift region filled with high-density plasma. The Neutralized Drift Compression Experiment (NDCX) at Lawrence Berkeley National Laboratory has measured a sixty-fold longitudinal current compression of an intense ion beam with pulse duration of a few nanoseconds, in agreement with simulations and theory. A strong solenoid is modeled near the end of the drift region in order to transversely focus the beam to a sub-millimeter spot size coincident with the longitudinal focal plane. The charge and current neutralization provided by the background plasma is critical in determining the total achievable transverse and longitudinal compression of the beam pulse. Numerical simulations show that the current density of an NDCX ion beam can be compressed over a few meters by factors greater than 10 5 with peak beam density in excess of 10 14 cm -3 . The peak beam density sets a lower bound on the local plasma density required near the focal plane for optimal beam compression, since the simulations show stagnation of the compression when n beam >n plasma . Beam-plasma interactions can also have a deleterious effect on the compression physics and lead to the formation of nonlinear wave excitations in the plasma. Simulations that optimize designs for the simultaneous transverse and longitudinal focusing of an NDCX ion beam for future warm dense matter experiments are discussed

  12. Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

    2017-04-01

    Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

  13. Fabrication of platinum nanopillars on peptide-based soft structures using a focused ion beam

    International Nuclear Information System (INIS)

    Joshi, K B; Singh, Prabhpreet; Verma, Sandeep

    2009-01-01

    An expedient entry into the construction of bionanocomposites by merging peptide self-assembly, focused ion beam milling, and electron beam-induced deposition is described. Hexapeptides 1 and 2 revealed spherical self-assembled structures which are confirmed by a scanning electron microscope (SEM), atomic force microscope (AFM), focused ion beam/high-resolution scanning electron microscope (FIB-HRSEM), and high-resolution transmission electron microscopy (HRTEM). The microspheres from 1 and 2 are milled with the help of an ion beam to create different shapes. Soft spherical peptide-based structures were also subjected to fabrication under a gallium ion beam, followed by deposition of platinum pillars through a direct write process. It is envisaged that such hybrid bionanocomposites could have applications ranging from Pt-based hydrogenation catalysts to bioelectronics. In addition, such a fabrication process might also be useful to electrically connect two biological systems in order to study an electrical signal or electron transport phenomenon and structural transformations

  14. Generation and focusing of pulsed intense ion beams. Progress report, April 1, 1979-September 30, 1979

    International Nuclear Information System (INIS)

    Sudan, R.N.; Hammer, D.A.

    1981-04-01

    Theoretical calculations suggest that an intense pulsed approx. 1 MeV proton beam can be used to simulate the characteristics of approx. 1 GeV heavy ion beam propagation in an inertial confinement fusion reactor chamber. Given the present availability of the former beams and the high projected cost for obtaining the latter ones, such experimental simulations appear appropriate. Work was undertaken under the cited contract to apply the technology of intense proton beams to this end. The first task was the development of a high brightness pulsed proton source which could produce a weakly convergent approx. 10 kA proton beam in a field free drift region. This was accomplished at approx. 250 keV, and preliminary beam propagation experiments were performed. It was concluded that a proper simulation experiment would require a higher voltage beam. An upgraded version of the existing generator, which would have produced a 30 kA beam at about 500 keV, and further propagation experiments were proposed as part of our unsuccessful renewal proposal dated October 15, 1979

  15. Three-dimensional patterning in polymer optical waveguides using focused ion beam milling

    Science.gov (United States)

    Kruse, Kevin; Burrell, Derek; Middlebrook, Christopher

    2016-07-01

    Waveguide (WG) photonic-bridge taper modules are designed for symmetric planar coupling between silicon WGs and single-mode fibers (SMFs) to minimize photonic chip and packaging footprint requirements with improving broadband functionality. Micromachined fabrication and evaluation of polymer WG tapers utilizing high-resolution focused ion beam (FIB) milling is performed and presented. Polymer etch rates utilizing the FIB and optimal methods for milling polymer tapers are identified for three-dimensional patterning. Polymer WG tapers with low sidewall roughness are manufactured utilizing FIB milling and optically tested for fabrication loss. FIB platforms utilize a focused beam of ions (Ga+) to etch submicron patterns into substrates. Fabricating low-loss polymer WG taper prototypes with the FIB before moving on to mass-production techniques provides theoretical understanding of the polymer taper and its feasibility for connectorization devices between silicon WGs and SMFs.

  16. Preliminary study on development of 300 Kv compact focused gaseous ion beam system

    Energy Technology Data Exchange (ETDEWEB)

    Ohkubo, T.; Ishii, Y.; Kamiya, T. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency (JAEA) 1233 Watanuki-machi, Takasaki, Gunma, 370-1292 (Japan); Miyake, Y. [Beam Seiko Instruments Inc., 2-10-1 Kamata, Ohta-ku, Tokyo, 144-0052 (Japan)

    2013-04-19

    A new 300 kV compact focused gaseous ion beam (gas-FIB) system with three-stage acceleration lens was constructed at JAEA. The preliminary experiments of formation of the focused gaseous ion beams were carried out to show the availability of the gas-FIB system as a writing tool for 3D proton lithography. As a result of the experiments, it was proved that the focal point was kept at the same position under changing the kinetic energy but with keeping the kinetic energy ratio constant, which was defined as the ratio of kinetic energy in object side to that in image side for the third acceleration lens. This characteristic of the gas-FIB is a good point to advance the 3D proton lithography changing penetration depth in a sample by varying the beam energy.

  17. Preliminary study on development of 300 Kv compact focused gaseous ion beam system

    International Nuclear Information System (INIS)

    Ohkubo, T.; Ishii, Y.; Kamiya, T.; Miyake, Y.

    2013-01-01

    A new 300 kV compact focused gaseous ion beam (gas-FIB) system with three-stage acceleration lens was constructed at JAEA. The preliminary experiments of formation of the focused gaseous ion beams were carried out to show the availability of the gas-FIB system as a writing tool for 3D proton lithography. As a result of the experiments, it was proved that the focal point was kept at the same position under changing the kinetic energy but with keeping the kinetic energy ratio constant, which was defined as the ratio of kinetic energy in object side to that in image side for the third acceleration lens. This characteristic of the gas-FIB is a good point to advance the 3D proton lithography changing penetration depth in a sample by varying the beam energy.

  18. Ga{sup +} implantation in a PZT film during focused ion beam micro-machining

    Energy Technology Data Exchange (ETDEWEB)

    Wollschlaeger, Nicole; Oesterle, Werner; Haeusler, Ines [Federal Institute for Materials Research and Testing, Unter den Eichen 87, 12205 Berlin (Germany); Stewart, Mark [National Physical Laboratory, Hampton Road, Teddington Middlesex TW 11 0LW (United Kingdom)

    2015-03-01

    The objective of the present work was to study the impact of Focused Ion Beam (FIB) machining parameters on the thickness of the damaged layer within a thin film PZT. Therefore, different Ga{sup +}- ion doses and ion energies were applied to a standard PZT film (80/20 lead zirconium titanate) under two beam incidence angles (90 and 1 ). The thicknesses of the corresponding Ga{sup +}-implanted layers were then determined by cross-sectional TEM in combination with energy dispersive spectroscopic (EDS) line-scans and correlated with polarisation hysteresis loops. The results show a decrease of Ga{sup +}-implanted layer thickness with decreasing inclination angle, whereas ion energy and ion dose could be correlated with gallium concentration in the implanted layers. Under the most unfavorable conditions the depth of the affected zone was 26 nm, it was only 2 nm for the most favorable conditions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Individual analysis of nonmetallic Inclusions in Steel by using the gallium focused ion beam secondary ion mass spectrometry

    International Nuclear Information System (INIS)

    Tomiyasu, Bunbunoshin; Inami, Akihiro; Abe, Masakazu; Nihei, Yoshimasa.

    1995-01-01

    Nonmetallic inclusions frequently exert a lot of unfavorable influences on the quality of steel. The size of nonmetallic inclusions in current steel products is less than a few μm in diameter. It is desirable to make clear the origin and generation process of such small particles of nonmetallic inclusion. In order to measure the shape, size, composition and inner elemental distribution, development of characterization methods for each inclusion particle is required. By employing a gallium focused ion beam (FIB) as a primary ion beam of secondary ion mass spectrometry (SIMS), the particle analysis with high spatial resolution is easily achieved. In this paper, we present the novel individual analysis of nonmetallic inclusions in steel by gallium FIB SIMS. We analyzed in two ways the nonmetallic inclusion particles segregated by electron beam melting. (1) By cross-sectioning of the particle using a gallium FIB, elemental maps of cross-section were obtained. The elements were distributed inhomogeneously on the cross-section. (2) We carried out the compositional analysis for several particles individually. Ten particles were analyzed by the shave-off analysis and the multivariate cluster analysis. Based on the composition of each particle, the inclusions were classified into six types. (author)

  20. Interaction of powerful hot plasma and fast ion streams with materials in dense plasma focus devices

    Czech Academy of Sciences Publication Activity Database

    Chernyshova, M.; Gribkov, V. A.; Kowalska-Strzeciwilk, E.; Kubkowska, M.; Miklaszewski, R.; Paduch, M.; Pisarczyk, T.; Zielinska, E.; Demina, E.V.; Pimenov, V. N.; Maslyaev, S. A.; Bondarenko, G.G.; Vilémová, Monika; Matějíček, Jiří

    2016-01-01

    Roč. 113, December (2016), s. 109-118 ISSN 0920-3796 R&D Projects: GA ČR(CZ) GA14-12837S Institutional support: RVO:61389021 Keywords : Radiation damageability * Materials tests * Plasma focus * Plasma streams * Ion beams * Laser interferometrya Subject RIV: JF - Nuclear Energetics OBOR OECD: Nuclear related engineering Impact factor: 1.319, year: 2016 http://www.sciencedirect.com/science/article/pii/S0920379616306858

  1. An electrodynamical model for the ion behaviour in the final plasma focus stages

    International Nuclear Information System (INIS)

    Zambreanu, V.; Doloc, C.M.

    1992-01-01

    Plasma focus devices (PFDs) are strong sources of fusion neutrons but the problem of which interactions are responsible for the fusion reactions is still open since neither of the proposed theoretical models has been confirmed experimentally. A model for the trajectories of the deuteron ions in a configuration of selfconsistent electromagnetic fields is proposed starting from an empirical plasma model which describes the plasma focus collapse and column phases. The proposed model is only electrodynamical under the assumption of a uniform current density and an infinite length of the plasma column, not taking into account the fluid characteristics of the plasma. (author)

  2. Coordinate transformation based cryo-correlative methods for electron tomography and focused ion beam milling

    International Nuclear Information System (INIS)

    Fukuda, Yoshiyuki; Schrod, Nikolas; Schaffer, Miroslava; Feng, Li Rebekah; Baumeister, Wolfgang; Lucic, Vladan

    2014-01-01

    Correlative microscopy allows imaging of the same feature over multiple length scales, combining light microscopy with high resolution information provided by electron microscopy. We demonstrate two procedures for coordinate transformation based correlative microscopy of vitrified biological samples applicable to different imaging modes. The first procedure aims at navigating cryo-electron tomography to cellular regions identified by fluorescent labels. The second procedure, allowing navigation of focused ion beam milling to fluorescently labeled molecules, is based on the introduction of an intermediate scanning electron microscopy imaging step to overcome the large difference between cryo-light microscopy and focused ion beam imaging modes. These methods make it possible to image fluorescently labeled macromolecular complexes in their natural environments by cryo-electron tomography, while minimizing exposure to the electron beam during the search for features of interest. - Highlights: • Correlative light microscopy and focused ion beam milling of vitrified samples. • Coordinate transformation based cryo-correlative method. • Improved correlative light microscopy and cryo-electron tomography

  3. The Z-pinch as plasma lens for the focusing of heavy ion beams

    International Nuclear Information System (INIS)

    Elfers, M.

    1992-04-01

    In the present thesis the influence of a Z-pinch plasma on the shape of heavy-ion beams and the for the understanding of this interaction most important plasma parameters were studied. For this the Z-pinch at the heavy-ion accelerator UNILAC was operated. The magnet field gradients of up to (25 ± 3) T/m occuring in the Z-pinch lead to the plasma-lens effect - the focusing of a charged-particle beam traversing axially the Z-pinch. In this thesis for the first time the focusing of a heavy-ion beam by the azimutal magnetic field of a Z-pinch is described. Different beams with an original diameter of 10 mm were focused. The smallest measured beam diameter amounts to 1 mm half-width. The beam energy amounts to 11.4 MeV/u, which leads at gold as projectile matter to a beam energy of 2.25 GeV. (orig./HSI) [de

  4. Performance predictions of a focused ion beam from a laser cooled and compressed atomic beam

    Energy Technology Data Exchange (ETDEWEB)

    Haaf, G. ten; Wouters, S. H. W.; Vredenbregt, E. J. D.; Mutsaers, P. H. A. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Geer, S. B. van der [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Pulsar Physics, Burghstraat 47, 5614 BC Eindhoven (Netherlands)

    2014-12-28

    Focused ion beams are indispensable tools in the semiconductor industry because of their ability to image and modify structures at the nanometer length scale. Here, we report on performance predictions of a new type of focused ion beam based on photo-ionization of a laser cooled and compressed atomic beam. Particle tracing simulations are performed to investigate the effects of disorder-induced heating after ionization in a large electric field. They lead to a constraint on this electric field strength which is used as input for an analytical model which predicts the minimum attainable spot size as a function of, amongst others, the flux density of the atomic beam, the temperature of this beam, and the total current. At low currents (I < 10 pA), the spot size will be limited by a combination of spherical aberration and brightness, while at higher currents, this is a combination of chromatic aberration and brightness. It is expected that a nanometer size spot is possible at a current of 1 pA. The analytical model was verified with particle tracing simulations of a complete focused ion beam setup. A genetic algorithm was used to find the optimum acceleration electric field as a function of the current. At low currents, the result agrees well with the analytical model, while at higher currents, the spot sizes found are even lower due to effects that are not taken into account in the analytical model.

  5. Correlative Raman spectroscopy and focused ion beam for targeted phase boundary analysis of titania polymorphs

    Energy Technology Data Exchange (ETDEWEB)

    Mangum, John S.; Chan, Lisa H.; Schmidt, Ute; Garten, Lauren M.; Ginley, David S.; Gorman, Brian P.

    2018-05-01

    Site-specific preparation of specimens using focused ion beam instruments for transmission electron microscopy is at the forefront of targeting regions of interest for nanoscale characterization. Typical methods of pinpointing desired features include electron backscatter diffraction for differentiating crystal structures and energy-dispersive X-Ray spectroscopy for probing compositional variations. Yet there are situations, notably in the titanium dioxide system, where these techniques can fail. Differentiating between the brookite and anatase polymorphs of titania is either excessively laborious or impossible with the aforementioned techniques. However, due to differences in bonding structure, Raman spectroscopy serves as an ideal candidate for polymorph differentiation. In this work, a correlative approach utilizing Raman spectroscopy for targeted focused ion beam specimen preparation was employed. Dark field imaging and diffraction in the transmission electron microscope confirmed the region of interest located via Raman spectroscopy and demonstrated the validity of this new method. Correlative Raman spectroscopy, scanning electron microscopy, and focused ion beam is shown to be a promising new technique for identifying site-specific preparation of nanoscale specimens in cases where conventional approaches do not suffice.

  6. Compact electrostatic beam optics for multi-element focused ion beams: simulation and experiments.

    Science.gov (United States)

    Mathew, Jose V; Bhattacharjee, Sudeep

    2011-01-01

    Electrostatic beam optics for a multi-element focused ion beam (MEFIB) system comprising of a microwave multicusp plasma (ion) source is designed with the help of two widely known and commercially available beam simulation codes: AXCEL-INP and SIMION. The input parameters to the simulations are obtained from experiments carried out in the system. A single and a double Einzel lens system (ELS) with and without beam limiting apertures (S) have been investigated. For a 1 mm beam at the plasma electrode aperture, the rms emittance of the focused ion beam is found to reduce from ∼0.9 mm mrad for single ELS to ∼0.5 mm mrad for a double ELS, when S of 0.5 mm aperture size is employed. The emittance can be further improved to ∼0.1 mm mrad by maintaining S at ground potential, leading to reduction in beam spot size (∼10 μm). The double ELS design is optimized for different electrode geometrical parameters with tolerances of ±1 mm in electrode thickness, electrode aperture, inter electrode distance, and ±1° in electrode angle, providing a robust design. Experimental results obtained with the double ELS for the focused beam current and spot size, agree reasonably well with the simulations.

  7. 1. contribution of the dynamics on the reactions mechanisms in the heavy ions collisions at the intermediary energies (20-100 MeV/A) for the light systems. 2. management of radioactive wastes by new options: nuclear data measurement programme between 20 and 150 MeV

    International Nuclear Information System (INIS)

    Eudes, Ph.

    2000-01-01

    The first part concerns the features of emitted charged particles in heavy ions reactions that have been studied in the framework of the semi classical Landau-Vlasov approach for the light system Ar + Al at 65 MeV/nucleon incident energy. The second part is devoted to the radioactive waste management (transmutation), but it was necessary to increase the data banks evaluated in neutrons up to 150-200 MeV and to create a data bank in protons. In the European framework it was decide to focus on three representative elements: lead (spallation target), iron (structure material) and uranium (actinide). (N.C.)

  8. Collective Focusing of Intense Ion Beam Pulses for High-energy Density Physics Applications

    International Nuclear Information System (INIS)

    Dorf, Mikhail A.; Kaganovich, Igor D.; Startsev, Edward A.; Davidson, Ronald C.

    2011-01-01

    The collective focusing concept in which a weak magnetic lens provides strong focusing of an intense ion beam pulse carrying a neutralizing electron background is investigated by making use of advanced particle-in-cell simulations and reduced analytical models. The original analysis by Robertson Phys. Rev. Lett. 48, 149 (1982) is extended to the parameter regimes of particular importance for several high-energy density physics applications. The present paper investigates (1) the effects of non-neutral collective focusing in a moderately strong magnetic field; (2) the diamagnetic effects leading to suppression of the applied magnetic field due to the presence of the beam pulse; and (3) the influence of a finite-radius conducting wall surrounding the beam cross-section on beam neutralization. In addition, it is demonstrated that the use of the collective focusing lens can significantly simplify the technical realization of the final focusing of ion beam pulses in the Neutralized Drift Compression Experiment-I (NDCX-I), and the conceptual designs of possible experiments on NDCX-I are investigated by making use of advanced numerical simulations.

  9. Preparation of neptunium and plutonium tracers in nuclear reactions of sup 2 sup 3 sup 6 U with (21-60)MeV sup 3 He ions

    CERN Document Server

    Aaltonen, J; Trzaska, V; Gromova, E A; Yakovlev, V A

    2001-01-01

    Preparation of sup 2 sup 3 sup 6 Pu, sup 2 sup 3 sup 7 Pu and sup 2 sup 3 sup 5 Np by reactions sup 2 sup 3 sup 6 U( sup 3 He, t beta sup -) sup 2 sup 3 sup 6 Pu, sup 2 sup 3 sup 6 U( sup 3 He, 2n) sup 2 sup 3 sup 7 Pu and sup 2 sup 3 sup 6 U( sup 3 He, p3n) sup 2 sup 3 sup 5 Np in sup 3 He ion beams, their energy 43 and 60 MeV, in the K-130 cyclotron at Yuvyaskyul University (Finland) was studied. Cross sections of the reactions were determined. Yield curves for thick targets were calculated. The results are discussed and compared with previously obtained data on other reactions giving rise to formation of the same products. Methods of radiochemical separation of the products and sample preparation for alpha- and gamma-spectrometry are described

  10. Inclusive measurements of the break-up of 156 MeV 6Li-ions at extreme forward angles and the quasi free break-up model

    International Nuclear Information System (INIS)

    Jellito, H.; Buschmann, J.; Gils, H.J.; Heide, N.; Kiener, J.; Rebel, H.; Zagromski, S.; Samanta, C.

    1988-11-01

    Inclusive alpha particle and deuteron spectra from collisions of 156 MeV 6 Li-ions with 12 C and 208 Pb were measured at extreme forward emission angles including zero degree. The measurements were performed with the Karlsruhe magnetic spectrograph 'Little John' and required an efficient reduction of the background from small-angle scattering. The observed double differential cross sections and angular distributions have been analysed on the basis of Serber's spectator break-up model. When going to angles smaller than grazing, where Coulomb effects are expected to the dominating, transitional features may appear. Corresponding effects probably associated with Coulomb break-up are observed with the 208 Pb-target and require a slight extension of the Serber approach. In the case of the 12 C-target the break-up cross sections in forward direction seem to reflect the shape of the internal momentum distribution of the alpha particle and deuteron cluster in the 6 Li-projectile and are in agreement with a 2S-type wave function. However, at larger angles the shape appears to be distorted, possibly by final state interactions. (orig.) [de

  11. Experimental studies of the break-up of 156 MeV 6Li-ions at extreme forward angles using the Karlsruhe magnetic spectrograph 'Little John'

    International Nuclear Information System (INIS)

    Jelitto, H.

    1987-05-01

    6 Li-induced break-up reactions have been investigated at reaction angles in extreme forward direction including O 0 with the Karlsruhe Magnetic Spectrograph 'Little John'. The experiments were characterized by the minimization of the high experimental background that dominates at small emission angles. Inclusive alpha-particle and deuteron spectra from the bombardement of 12 C- and 208 Pb-targets with 156 MeV 6 Li-ions have been measured. Below the grazing angle the Coulomb interaction shows a distinct influence on the angular distributions of the fragments. A simple spectator-model and a more realistic description within the DWBA-formalism largely allows a reproduction of the data. In the light of the reverse reaction α + d → 6 Li + γ at small α-d-relative energies, which is of considerable interest for astrophysics, a particle-particle-coincidence measurement with θ α = 5 0 and θ d = -2 0 has been performed. The result could be reproduced reasonably well by a simple Monte-Carlo-simulation. Beside the treatment of a physical problem this work deals with the start-up of the magnetic spectrograph and the clarification of spectrograph specific questions concerning the data reduction. (orig.) [de

  12. TSD current investigations in pristine and 100 MeV Ni-ion irradiated PET/0.3 PHB polymer liquid crystal

    International Nuclear Information System (INIS)

    Quamara, J.K.; Singh, Nafa; Prabhavathi, T.; Sridharbabu, Y.

    2002-01-01

    The dielectric relaxations investigations have been carried out in pristine as well as 100 MeV 58 Ni ion irradiated (PELLETRON facility, Nuclear Science Center, New Delhi) PET/0.3 PHB PLC samples. Thermally stimulated depolarization current technique (TSDC) has been employed for this purpose. The plc samples were polarized at 180 deg C under the influence of various polarizing fields following the usual method. Three current maxima are observed around 35deg, 120deg and 155degC which are ascribed as β', β and α transitions. These transitions are mainly due to the fast reacting dipoles of PHB regions, dipolar character due to carbonyl groups in PET rich phase and to the cold crystallization of PET. The results confirm the biphasic nature of this plc. The high energy irradiation influences both β and α transitions. Increase in fluence shifts the β peak as well as α peak towards higher temperature. This confirms that high energy irradiation has not only affected the carbonyl groups but has created new phases. (author)

  13. Development of X-ray and ion diagnostic methods for plasma focus research

    International Nuclear Information System (INIS)

    Sadowski, M.

    1986-12-01

    A review of experimental methods used for investigation of X-rays and ion-beams emmited from plasma focus facilities is presented. The research program has been realized at the Institute for Nuclear Studies in Swierk and at the Institut fuer Plasmaforschung in Stuttgart, within the frames of an international co-operation. The studies on ion emission from different PF facilities are reviewed. The application of CN-films with Al-filters and of different ion-pinhole cameras is described. The use of a Thomson mass-spectrometer adopted for plasma studies is presented. The time-resolved measurements combined with a simultaneous mass- and energy-analysis of the ion beams are also described. The most important results of these studies are summarized. Particular attention is also paid to the studies of the X-ray emission. The use of stereoscopic sets of vacuum pinhole cameras with thin Be-filters is described. The application of X-ray pinhole cameras equipped with miniature scintillators for time-resolved measurements is also presented. The most important results of the X-ray emission studies are summarized. 35 refs., 12 figs. (author)

  14. Environmental sensing with optical fiber sensors processed with focused ion beam and atomic layer deposition

    Science.gov (United States)

    Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2015-03-01

    We report an optical fiber chemical sensor based on a focused ion beam processed optical fiber. The demonstrated sensor is based on a cavity formed onto a standard 1550 nm single-mode fiber by either chemical etching, focused ion beam milling (FIB) or femtosecond laser ablation, on which side channels are drilled by either ion beam milling or femtosecond laser irradiation. The encapsulation of the cavity is achieved by optimized fusion splicing onto a standard single or multimode fiber. The empty cavity can be used as semi-curved Fabry-Pérot resonator for gas or liquid sensing. Increased reflectivity of the formed cavity mirrors can be achieved with atomic layer deposition (ALD) of alternating metal oxides. For chemical selective optical sensors, we demonstrate the same FIB-formed cavity concept, but filled with different materials, such as polydimethylsiloxane (PDMS), poly(methyl methacrylate) (PMMA) which show selective swelling when immersed in different solvents. Finally, a reducing agent sensor based on a FIB formed cavity partially sealed by fusion splicing and coated with a thin ZnO layer by ALD is presented and the results discussed. Sensor interrogation is achieved with spectral or multi-channel intensity measurements.

  15. Improved Light Extraction Efficiency by Photonic Crystal Arrays on Transparent Contact Layer Using Focused Ion Beams

    International Nuclear Information System (INIS)

    Wu, G.M.; Tsai, B.H.; Kung, S.F.; Wu, C.F.

    2011-01-01

    Nitride-based thin-film materials have become increasingly important for the high brightness light-emitting diode applications. The improvements in light extraction and lower power consumption are highly desired. Although the internal quantum efficiency of GaN-based LED has been relatively high, only a small fraction of light can be extracted. In this study, a new design of two-dimensional photonic crystal array has been prepared on the top transparent contact layer of indium-tin oxide film to improve the light extraction efficiency using focused ion beam. The acceleration voltage of the Ga dual-beam nanotechnology system SMI 3050 was 30 kV and the ion beam current was 100 pA. The cylindrical air holes had the diameter of 150 nm and depth of 100 nm. The micro photoluminescence analysis results showed that the light output intensity could be 1.5 times of that of the non-patterned control sample. In addition, the structural damage from the focused ion beam drilling of GaN step could be eliminated. The excellent I-V characteristics have been maintained, and the external light extraction efficiency would be still improved for the LED devices. (author)

  16. Self-focusing of nonlinear waves in a relativistic plasma with positive and negative ions

    International Nuclear Information System (INIS)

    Mukherjee, Joydeep; Chowdhury, A.R.

    1994-01-01

    The phenomenon of self-focusing of nonlinear waves was analysed in a relativistic plasma consisting of both positive and negative ions, which are assumed to be hot. The effect of the inertia of the relativistic electron is also considered by treating it dynamically. A modified form of reductive perturbation is used to deduce a nonlinear Schroedinger equation describing the purely spatial variation of the nonlinear wave. Self-focusing of the wave can be ascertained by analysing the transversal stability of the solitary wave. It is shown that the zones of stability of the wave may become wider due to the mutual influence of various factors present in the plasma, thus favouring the process of self-focusing. 10 refs., 2 figs

  17. Determining the Interstellar Wind Longitudinal Inflow Evolution Using Pickup Ions in the Helium Focusing Cone

    Science.gov (United States)

    Spitzer, S. A.; Gilbert, J. A.; Lepri, S. T.

    2017-12-01

    We propose to determine the longitudinal inflow direction of the local interstellar medium through the Heliosphere. This longitudinal inflow direction directly correlates to the longitudinal direction of the helium focusing cone with respect to the Sun. We can calculate this direction by finding the He+ pickup ion density peak as mass spectrometers such as ACE/SWICS, Wind/STICS, and Helios/Micrometeoroid Detector and Analyzer pass through the focusing cone. Mapping from the location of this density peak to the Sun, around which the helium is focused, will directly yield the desired longitudinal direction. We will find this direction for each year since the first measurements in the 1970s through the present and thereby analyze its evolution over time. This poster outlines our proposed method and initial results.

  18. L-shell X-ray production cross sections of Ce, Nd, Sm, Eu, Gd, and Dy by impact of {sup 14}N{sup 2+} ions with energies between 7.0 MeV and 10.5 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Murillo, G.; Méndez, B.; López-Monroy, J. [Departamento de Aceleradores, Instituto Nacional de Investigaciones Nucleares, Carr. México-Toluca S/N, Ocoyoacac, Edo. Méx. 52750 (Mexico); Miranda, J., E-mail: miranda@fisica.unam.mx [Instituto de Física, Universidad Nacional Autónoma de México, A.P. 20-364, México, Cd. Mx. 01000 (Mexico); Villaseñor, P. [Departamento de Aceleradores, Instituto Nacional de Investigaciones Nucleares, Carr. México-Toluca S/N, Ocoyoacac, Edo. Méx. 52750 (Mexico)

    2016-09-15

    Highlights: • A new data set of L X-ray production cross sections by nitrogen ion impact is given. • The target elements have atomic numbers in the range 58–66 (lanthanoids). • A universal scaling as function of a reduced velocity variable is applied. • The eCPSSR model with EC and MI corrections gives very good results. - Abstract: L-shell X-ray production cross sections from the lanthanoid elements Ce, Nd, Sm, Eu, Gd, and Dy, induced by the impact of {sup 14}N{sup 2+} ions with energies in the interval 7.0 MeV to 10.5 MeV (0.50 MeV/μ to 0.75 MeV/μ), were measured and then compared with theoretical calculations obtained with the ECPSSR model with exact limits of integration (eCPSSR) and related corrections. These include the electron capture by the incoming ion and multiple ionizations of higher shells. Data from this work were contrasted with previously published L X-ray production cross sections for {sup 14}N{sup 2+} ion impact. As with other ions, a universal behavior is found when L{sub α} and L{sub γ} X-ray production cross sections are plotted as a function of reduced velocity parameters. The agreement with theoretical predictions was very good when the corrections were applied to the eCPSSR model.

  19. Novel EBSD preparation method for Cu/Sn microbumps using a focused ion beam

    International Nuclear Information System (INIS)

    Liu, Tao-Chi; Chen, Chih; Chiu, Kuo-Jung; Lin, Han-Wen; Kuo, Jui-Chao

    2012-01-01

    We proposed a novel technique developed from focused ion beam (FIB) polishing for sample preparation of electron backscatter diffraction (EBSD) measurement. A low-angle incident gallium ion beam with a high acceleration voltage of 30 kV was used to eliminate the surface roughness of cross-sectioned microbumps resulting from mechanical polishing. This work demonstrates the application of the FIB polishing technique to solders for a high-quality sample preparation for EBSD measurement after mechanical polishing. - Highlights: ► The novel FIB technique of sample preparation is fast, effective and low-cost. ► It can enhance the process precision to the specific area of the sample. ► It is convenient for analyzing the metallurgy of the microbump in 3DIC packaging. ► The EBSD image quality can be enhanced by just using a common FIB instrument.

  20. The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

    International Nuclear Information System (INIS)

    Sievilae, Paeivi; Chekurov, Nikolai; Tittonen, Ilkka

    2010-01-01

    Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10 13 ions cm -2 has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectivity of at least 2000:1 between implanted and non-implanted areas. The combined FIB-TMAH process has been used to generate various types of 3D nanostructures including nanochannels separated by thin vertical sidewalls with aspect ratios up to 1:30, ultra-narrow (approx. 25 nm) freestanding bridges and cantilevers, and gratings with a resolution of 20 lines μm -1 .

  1. Focused ion beam patterning to dielectrophoretically assemble single nanowire based devices

    International Nuclear Information System (INIS)

    La Ferrara, V; Massera, E; Francia, G Di; Alfano, B

    2010-01-01

    Direct-write processing is increasingly taking place in nanodevice fabrication. In this work, Focused Ion Beam (FIB), a powerful tool in maskless micromachining, is used for electrode patterning onto a silicon/silicon nitride substrate. Then a single palladium nanowire is assembled between electrodes by means of dielectrophoresis (DEP). The nanowire morphology depends on the electrode pattern when DEP conditions are fixed. FIB/DEP combination overcomes the problem of nanowire electrical contamination due to gallium ion bombardment and the as-grown nanowire retains its basic electrical properties. Single nanowire based devices have been fabricated with this novel approach and have been tested as hydrogen sensors, confirming the reliability of this technology.

  2. Portable test bench for the studies concerning ion sources and ion beam extraction and focusing systems; Banco de pruebas portatil para el estudio de fuentes de iones y de la extraccion y enfoque del haz de iones

    Energy Technology Data Exchange (ETDEWEB)

    Cordero Lopez, F

    1961-07-01

    A portable test bench is described, which was designed to check ion sources, ion beam extraction and focusing systems before its use in a 600 KeV Cockcroft-Walton accelerator. The vacuum possibilities of the system are specially analyzed in connection with its particular use. The whole can be considered as a portable accelerator of low energy (50 keV). (Author)

  3. Inertial confinement fusion driver enhancements: Final focusing systems and compact heavy-ion driver designs

    International Nuclear Information System (INIS)

    Bieri, R.L.

    1991-01-01

    Required elements of an inertial confinement fusion power plant are modeled and discussed. A detailed analysis of two critical elements of candidate drivers is done, and new component designs are proposed to increase the credibility and feasibility of each driver system. An analysis of neutron damage to the final elements of a laser focusing system is presented, and multilayer -- dielectric mirrors are shown to have damage lifetimes which axe too short to be useful in a commercial power plant. A new final-focusing system using grazing incidence metal mirrors to protect sensitive laser optics is designed and shown to be effective in extending the lifetime of the final focusing system. The reflectivities and damage limits of grazing incidence metal mirrors are examined in detail, and the required mirror sizes are shown to be compatible with the beam sizes and illumination geometries currently envisioned for laser drivers. A detailed design and analysis is also done for compact arrays of superconducting magnetic quadrupoles, which are needed in a multi-beam heavy-ion driver. The new array model is developed in more detail than some previous conceptual designs and models arrays which are more compact than arrays scaled from existing single -- quadrupole designs. The improved integrated model for compact arrays is used to compare the effects of various quadrupole array design choices on the size and cost of a heavy-ion driver. Array design choices which significantly affect the cost of a heavy-ion driver include the choice of superconducting material and the thickness of the collar used to support the winding stresses. The effect of these array design choices on driver size and cost is examined and the array model is used to estimate driver cost savings and performance improvements attainable with aggressive quadrupole array designs with high-performance superconductors

  4. Dual-beam focused ion beam/electron microscopy processing and metrology of redeposition during ion-surface 3D interactions, from micromachining to self-organized picostructures.

    Science.gov (United States)

    Moberlychan, Warren J

    2009-06-03

    Focused ion beam (FIB) tools have become a mainstay for processing and metrology of small structures. In order to expand the understanding of an ion impinging a surface (Sigmund sputtering theory) to our processing of small structures, the significance of 3D boundary conditions must be realized. We consider ion erosion for patterning/lithography, and optimize yields using the angle of incidence and chemical enhancement, but we find that the critical 3D parameters are aspect ratio and redeposition. We consider focused ion beam sputtering for micromachining small holes through membranes, but we find that the critical 3D considerations are implantation and redeposition. We consider ion beam self-assembly of nanostructures, but we find that control of the redeposition by ion and/or electron beams enables the growth of nanostructures and picostructures.

  5. Origin and Properties of Quiet-time 0.11–1.28 MeV Nucleon{sup −1} Heavy-ion Population Near 1 au

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, M. A.; Desai, M. I.; Ebert, R. W. [Space Science and Engineering Division, Southwest Research Institute, San Antonio, TX 78238 (United States); Mason, G. M. [Johns Hopkins University Applied Physics Laboratory, Laurel, MD 20723 (United States); Farahat, A., E-mail: maldayeh@swri.edu [Department of Physics, College of Applied and Supporting Studies, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2017-02-01

    Using measurements from the Advanced Composition Explorer /Ultra-Low Energy Isotope Spectrometer near 1 au, we surveyed the composition and spectra of heavy ions (He-through-Fe) during quiet times from 1998 January 1 to 2015 December 31 at suprathermal energies between ∼0.11 and ∼1.28 MeV nucleon{sup −1}. The selected time period covers the maxima of solar cycles 23 and 24 and the extended solar minimum in between. We find the following. (1) The number of quiet hours in each year correlates well with the sunspot number, year 2009 was the quietest for about 82% of the time. (2) The composition of the quiet-time suprathermal heavy-ion population ({sup 3}He, C-through-Fe) correlates well with the level of solar activity, exhibiting SEP-like composition signatures during solar maximum, and CIR- or solar wind-like composition during solar minimum. (3) The heavy-ion (C–Fe) spectra exhibit suprathermal tails at energies of 0.11–0.32 MeV nucleon{sup −1} with power-law spectral indices ranging from 1.40 to 2.97. Fe spectra soften (steepen, i.e., spectral index increases) smoothly with increasing energies compared with Fe, indicating a rollover behavior of Fe at higher energies (0.45–1.28 MeV nucleon{sup −1}). (4) Spectral indices of Fe and O do not appear to exhibit clear solar cycle dependence. (2) and (3) imply that during IP quiet times and at energies above ∼0.1 MeV nucleon{sup −1}, the IP medium is dominated by material from prior solar and interplanetary events. We discuss the implications of these extended observations in the context of the current understanding of the suprathermal ion population near 1 au.

  6. Study and utilization of ion beams created in the Focus experiment

    International Nuclear Information System (INIS)

    Bernard, A.; Garconnet, J.P.; Jolas, A.; Le Breton, J.P.; Mascureau, J. de.

    1982-06-01

    Ion beams created in a plasma focus electrical discharge are evidenced and measured from interaction with CD 2 and DLi targets. Aluminum targets are also used with observation of the radiation temperature and material expansion velocity. Comparison between experimental measurements and numerical computations allows to determine energy deposition in the aluminum foil as well as beams values. With the 200 kJ Actime facility 2 to 3 MJ/g deposition is obtained in aluminum on approximately one square centimeter. A fast valve gas injection has been developed on another facility and preliminary results are given [fr

  7. Longitudinal compression of heavy-ion beams with minimum requirements on final focus

    International Nuclear Information System (INIS)

    Ho, D.D.M.; Bangerter, R.O.; Mark, J.W.K.; Brandon, S.T.; Lee, E.P.

    1986-01-01

    A method is developed to compress a heavy-ion beam longitudinally in such a way that the compressed pulse has a constant line-charge density profile and uniform longitudinal momentum. These conditions may be important from the standpoint of final focusing. By realizing the similarity of the equations that describe the 1-D charged-particle motion to the equations that describe 1-D ideal gas flow, the evolution of lambda and the velocity tilt can be calculated using the method of characteristics developed for unsteady supersonic gasdynamics. Particle simulations confirm the theory. Various schemes for pulse shaping have been investigated

  8. Development of Focused Ion Beam technique for high speed steel 3D-SEM artefact fabrication

    DEFF Research Database (Denmark)

    Carli, Lorenzo; MacDonald, A. Nicole; De Chiffre, Leonardo

    2009-01-01

    The work describes preliminary manufacture by grinding, followed by machining on a Focused Ion Beam (FIB), of a high speed steel step artefact for 3D-SEM calibration. The FIB is coupled with a SEM in the so called dual beam instrument. The milling capabilities of FIB were checked from a qualitative...... point of view, using the dual beam SEM imaging, and quantitatively using a reference stylus instrument, to establish traceability. A triangular section having a depth of about 10 μm was machined, where the 50 μm curvature radius due to grinding was reduced to about 2 μm by FIB milling...

  9. Gradient and alternating diameter nanopore templates by focused ion beam guided anodization

    International Nuclear Information System (INIS)

    Chen Bo; Lu, Kathy; Tian Zhipeng

    2010-01-01

    Ordered arrays of anodic alumina nanopores with uniform pore diameters have been fabricated by self-organized anodization of aluminum. However, gradient or alternating diameter nanopore arrays with designed interpore distances have not been possible. In this study, focused ion beam lithography is used to fabricate hexagonally arranged concaves with different diameters in designed arrangements on aluminum surfaces. The patterns are then used to guide the further growth of alumina nanopores in the subsequent oxalic acid anodization. Gradient and alternating nanopore arrangements have been attained by FIB patterning guided oxalic acid anodization. The fundamental understanding of the process is discussed.

  10. Hydrogen loss and its improved retention in hydrogen plasma treated a-SiNx:H films: ERDA study with 100 MeV Ag7+ ions

    Science.gov (United States)

    Bommali, R. K.; Ghosh, S.; Khan, S. A.; Srivastava, P.

    2018-05-01

    Hydrogen loss from a-SiNx:H films under irradiation with 100 MeV Ag7+ ions using elastic recoil detection analysis (ERDA) experiment is reported. The results are explained under the basic assumptions of the molecular recombination model. The ERDA hydrogen concentration profiles are composed of two distinct hydrogen desorption processes, limited by rapid molecular diffusion in the initial stages of irradiation, and as the fluence progresses a slow process limited by diffusion of atomic hydrogen takes over. Which of the aforesaid processes dominates, is determined by the continuously evolving Hydrogen concentration within the films. The first process dominates when the H content is high, and as the H concentration falls below a certain threshold (Hcritical) the irradiation generated H radicals have to diffuse through larger distances before recombining to form H2, thereby significantly bringing down the hydrogen evolution rate. The ERDA measurements were also carried out for films treated with low temperature (300 °C) hydrogen plasma annealing (HPA). The HPA treated films show a clear increase in Hcritical value, thus indicating an improved diffusion of atomic hydrogen, resulting from healing of weak bonds and passivation of dangling bonds. Further, upon HPA films show a significantly higher H concentration relative to the as-deposited films, at advanced fluences. These results indicate the potential of HPA towards improved H retention in a-SiNx:H films. The study distinguishes clearly the presence of two diffusion processes in a-SiNx:H whose diffusion rates differ by an order of magnitude, with atomic hydrogen not being able to diffuse further beyond ∼ 1 nm from the point of its creation.

  11. Chemical degradation and morphological instabilities during focused ion beam prototyping of polymers.

    Science.gov (United States)

    Orthacker, A; Schmied, R; Chernev, B; Fröch, J E; Winkler, R; Hobisch, J; Trimmel, G; Plank, H

    2014-01-28

    Focused ion beam processing of low melting materials, such as polymers or biological samples, often leads to chemical and morphological instabilities which prevent the straight-forward application of this versatile direct-write structuring method. In this study the behaviour of different polymer classes under ion beam exposure is investigated using different patterning parameters and strategies with the aim of (i) correlating local temperatures with the polymers' chemistry and its morphological consequences; and (ii) finding a way of processing sensitive polymers with lowest chemical degradation while maintaining structuring times. It is found that during processing of polymers three temperature regimes can be observed: (1) at low temperatures all polymers investigated show stable chemical and morphological behaviour; (2) very high temperatures lead to strong chemical degradation which entails unpredictable morphologies; and (3) in the intermediate temperature regime the behaviour is found to be strongly material dependent. A detailed look reveals that polymers which rather cross-link in the proximity of the beam show stable morphologies in this intermediate regime, while polymers that rather undergo chain scission show tendencies to develop a creeping phase, where material follows the ion beam movement leading to instable and unpredictable morphologies. Finally a simple, alternative patterning strategy is suggested, which allows stable processing conditions with lowest chemical damage even for challenging polymers undergoing chain scission.

  12. Source-to-target simulation of simultaneous longitudinal and transverse focusing of heavy ion beams

    Directory of Open Access Journals (Sweden)

    D. R. Welch

    2008-06-01

    Full Text Available Longitudinal bunching factors in excess of 70 of a 300-keV, 27-mA K^{+} ion beam have been demonstrated in the neutralized drift compression experiment [P. K. Roy et al., Phys. Rev. Lett. 95, 234801 (2005PRLTAO0031-900710.1103/PhysRevLett.95.234801] in rough agreement with particle-in-cell source-to-target simulations. A key aspect of these experiments is that a preformed plasma provides charge neutralization of the ion beam in the last one meter drift region where the beam perveance becomes large. The simulations utilize the measured ion source temperature, diode voltage, and induction-bunching-module voltage waveforms in order to determine the initial beam longitudinal phase space which is critical to accurate modeling of the longitudinal compression. To enable simultaneous longitudinal and transverse compression, numerical simulations were used in the design of the solenoidal focusing system that compensated for the impact of the applied velocity tilt on the transverse phase space of the beam. Complete source-to-target simulations, that include detailed modeling of the diode, magnetic transport, induction bunching module, and plasma neutralized transport, were critical to understanding the interplay between the various accelerator components in the experiment. Here, we compare simulation results with the experiment and discuss the contributions to longitudinal and transverse emittance that limit the final compression.

  13. TUTORIAL: Focused-ion-beam-based rapid prototyping of nanoscale magnetic devices

    Science.gov (United States)

    Khizroev, S.; Litvinov, D.

    2004-03-01

    In this tutorial, focused-ion-beam (FIB)-based fabrication is considered from a very unconventional angle. FIB is considered not as a fabrication tool that can be used for mass production of electronic devices, similar to optical and E-beam—based lithography, but rather as a powerful tool to rapidly fabricate individual nanoscale magnetic devices for prototyping future electronic applications. Among the effects of FIB-based fabrication of magnetic devices, the influence of Ga+-ion implantation on magnetic properties is presented. With help of magnetic force microscopy (MFM), it is shown that there is a critical doze of ions that a magnetic material can be exposed to without experiencing a change in the magnetic properties. Exploiting FIB from such an unconventional perspective is especially favourable today when the future of so many novel technologies depends on the ability to rapidly fabricate prototype nanoscale magnetic devices. As one of the most illustrative examples, the multi-billion-dollar data storage industry is analysed as the technology field that strongly benefited from implementing FIB in the above-described role. The essential role of FIB in the most recent trend of the industry towards perpendicular magnetic recording is presented. Moreover, other emerging and fast-growing technologies are considered as examples of nanoscale technologies whose future could strongly depend on the implementation of FIB in the role of a nanoscale fabrication tool for rapid prototyping. Among the other described technologies are 'ballistic' magnetoresistance, patterned magnetic media, magnetoresistive RAM (MRAM), and magnetic force microscopy.

  14. Occurrence of particle debris field during focused Ga ion beam milling of glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Hu Qin [Centre for Industrial Photonics, Institute for Manufacturing, Department of Engineering, University of Cambridge, Alan Reece Building, 17 Charles Babbage Road, Cambridge, CB3 0FS (United Kingdom); O' Neill, William, E-mail: wo207@eng.cam.ac.uk [Centre for Industrial Photonics, Institute for Manufacturing, Department of Engineering, University of Cambridge, Alan Reece Building, 17 Charles Babbage Road, Cambridge, CB3 0FS (United Kingdom)

    2010-08-01

    To explore the machining characteristics of glassy carbon by focused ion beam (FIB), particles induced by FIB milling on glassy carbon have been studied in the current work. Nano-sized particles in the range of tens of nanometers up to 400 nm can often be found around the area subject to FIB milling. Two ion beam scanning modes - slow single scan and fast repetitive scan - have been tested. Fewer particles are found in single patterns milled in fast repetitive scan mode. For a group of test patterns milled in a sequence, it was found that a greater number of particles were deposited around sites machined early in the sequence. In situ EDX analysis of the particles showed that they were composed of C and Ga. The formation of particles is related to the debris generated at the surrounding areas, the low melting point of gallium used as FIB ion source and the high contact angle of gallium on glassy carbon induces de-wetting of Ga and the subsequent formation of Ga particles. Ultrasonic cleaning can remove over 98% of visible particles. The surface roughness (R{sub a}) of FIB milled areas after cleaning is less than 2 nm.

  15. Occurrence of particle debris field during focused Ga ion beam milling of glassy carbon

    International Nuclear Information System (INIS)

    Hu Qin; O'Neill, William

    2010-01-01

    To explore the machining characteristics of glassy carbon by focused ion beam (FIB), particles induced by FIB milling on glassy carbon have been studied in the current work. Nano-sized particles in the range of tens of nanometers up to 400 nm can often be found around the area subject to FIB milling. Two ion beam scanning modes - slow single scan and fast repetitive scan - have been tested. Fewer particles are found in single patterns milled in fast repetitive scan mode. For a group of test patterns milled in a sequence, it was found that a greater number of particles were deposited around sites machined early in the sequence. In situ EDX analysis of the particles showed that they were composed of C and Ga. The formation of particles is related to the debris generated at the surrounding areas, the low melting point of gallium used as FIB ion source and the high contact angle of gallium on glassy carbon induces de-wetting of Ga and the subsequent formation of Ga particles. Ultrasonic cleaning can remove over 98% of visible particles. The surface roughness (R a ) of FIB milled areas after cleaning is less than 2 nm.

  16. Positioning of self-assembled InAs quantum dots by focused ion beam implantation

    International Nuclear Information System (INIS)

    Mehta, M.

    2007-01-01

    Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 μm was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from positioned QDs confirm their good optical quality. (orig.)

  17. Focused ion-beam line profiles: A study of some factors affecting beam broadening

    International Nuclear Information System (INIS)

    Templeton, I.M.; Champion, H.G.

    1995-01-01

    The current--density profile of a focused ion beam (FIB) has a central peak accompanied by broader ''wings'' that, while unimportant in lithographic applications, can lead to unwanted effects during an implantation operation. The origin of the wings, and hence the best way to minimize them, is not clear and needs further study. We have measured the line profiles of several of the ions available in our FIB machine as a function of a number of variables, under ultrahigh vacuum (UHV) conditions. No effects are observed from changes in emission current or deliberate defocusing of the objective lens. There are some changes with beam aperture and/or current, but the biggest differences seem to be associated with a change of source type and hence, possibly, with a change in the source/extractor configuration or in the alloy and the emission process. The wing amplitudes are appreciably lower than many previously observed, and their profiles, at least for the lighter ions studied (Be ++ , Be + , and B + ), are Gaussian rather than exponential. It seems possible that our UHV conditions may have eliminated a scattering mechanism responsible for the larger, exponential wings previously observed. The corresponding beam and rectangle-edge profiles have been calculated. copyright 1995 American Vacuum Society

  18. Spin-resolved magnetic studies of focused ion beam etched nano-sized magnetic structures

    International Nuclear Information System (INIS)

    Li Jian; Rau, Carl

    2005-01-01

    Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states and magnetic vortices, found at surfaces of FIB patterned magnetic elements. It is found that FIB milling has a negligible effect on surface magnetic domain and domain wall structures. It is demonstrated that SIMPA can evolve into an important and efficient tool to study magnetic domain, domain wall and other structures as well as to perform magnetic depth profiling of magnetic nano-systems to be used in ultra-high density magnetic recording and in magnetic sensors

  19. Aluminum oxide mask fabrication by focused ion beam implantation combined with wet etching

    International Nuclear Information System (INIS)

    Liu Zhengjun; Iltanen, Kari; Chekurov, Nikolai; Tittonen, Ilkka; Grigoras, Kestutis

    2013-01-01

    A novel aluminum oxide (Al 2 O 3 ) hard mask fabrication process with nanoscale resolution is introduced. The Al 2 O 3 mask can be used for various purposes, but in this work it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE). The patterning of Al 2 O 3 is a two-step process utilizing focused ion beam (FIB) irradiation combined with wet chemical etching. Gallium (Ga + ) FIB maskless patterning confers wet etch selectivity between the irradiated region and the non-irradiated one on the Al 2 O 3 layer, and mask patterns can easily be revealed by wet etching. This method is a modification of Ga + FIB mask patterning for the silicon etch stop, which eliminates the detrimental lattice damage and doping of the silicon substrate in critical devices. The shallow surface gallium FIB irradiated Al 2 O 3 mask protects the underlying silicon from Ga + ions. The performance of the masking capacity was tested by drawing pairs consisting of a line and an empty space with varying width. The best result was seven such pairs for 1 μm. The smallest half pitch was 59 nm. This method is capable of arbitrary pattern generation. The fabrication of a freestanding single-ended tuning fork resonator utilizing the introduced masking method is demonstrated. (paper)

  20. Microsputterer with integrated ion-drag focusing for additive manufacturing of thin, narrow conductive lines

    Science.gov (United States)

    Kornbluth, Y. S.; Mathews, R. H.; Parameswaran, L.; Racz, L. M.; Velásquez-García, L. F.

    2018-04-01

    We report the design, modelling, and proof-of-concept demonstration of a continuously fed, atmospheric-pressure microplasma metal sputterer that is capable of printing conductive lines narrower than the width of the target without the need for post-processing or lithographic patterning. Ion drag-induced focusing is harnessed to print narrow lines; the focusing mechanism is modelled via COMSOL Multiphysics simulations and validated with experiments. A microplasma sputter head with gold target is constructed and used to deposit imprints with minimum feature sizes as narrow as 9 µm, roughness as small as 55 nm, and electrical resistivity as low as 1.1 µΩ · m.

  1. Sensitive detection of hydrogen in a-Si:H by coincidence measurement of elastically scattered 100 MeV /sup 3/He/sup 2 +/ ions and recoil protons

    Energy Technology Data Exchange (ETDEWEB)

    Fukada, Noboru; Imura, Takeshi; Hiraki, Akio [Osaka Univ., Suita (Japan). Faculty of Engineering; Itahashi, Takahisa; Fukuda, Tomokazu; Tanaka, Masayoshi

    1982-09-01

    We have drastically improved the sensitivity of the nuclear elastic scattering (NES) method for determining hydrogen concentrations in hydrogenated amorphous silicon (a-Si:H) films. A beam of 100 MeV /sup 3/He/sup 2 +/ ions was used in the experiment. By taking the coincidence of detection of the scattered /sup 3/He ion with that of the recoil proton, we could achieve a sensitivity of 0.1 atomic percent with a precision of about 1 percent for 1 ..mu..m films.

  2. Study of the effects of focused high-energy boron ion implantation in diamond

    Science.gov (United States)

    Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

    2017-08-01

    Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

  3. Tapered optical fiber tip probes based on focused ion beam-milled Fabry-Perot microcavities

    Science.gov (United States)

    André, Ricardo M.; Warren-Smith, Stephen C.; Becker, Martin; Dellith, Jan; Rothhardt, Manfred; Zibaii, M. I.; Latifi, H.; Marques, Manuel B.; Bartelt, Hartmut; Frazão, Orlando

    2016-09-01

    Focused ion beam technology is combined with dynamic chemical etching to create microcavities in tapered optical fiber tips, resulting in fiber probes for temperature and refractive index sensing. Dynamic chemical etching uses hydrofluoric acid and a syringe pump to etch standard optical fibers into cone structures called tapered fiber tips where the length, shape, and cone angle can be precisely controlled. On these tips, focused ion beam is used to mill several different types of Fabry-Perot microcavities. Two main cavity types are initially compared and then combined to form a third, complex cavity structure. In the first case, a gap is milled on the tapered fiber tip which allows the external medium to penetrate the light guiding region and thus presents sensitivity to external refractive index changes. In the second, two slots that function as mirrors are milled on the tip creating a silica cavity that is only sensitive to temperature changes. Finally, both cavities are combined on a single tapered fiber tip, resulting in a multi-cavity structure capable of discriminating between temperature and refractive index variations. This dual characterization is performed with the aid of a fast Fourier transform method to separate the contributions of each cavity and thus of temperature and refractive index. Ultimately, a tapered optical fiber tip probe with sub-standard dimensions containing a multi-cavity structure is projected, fabricated, characterized and applied as a sensing element for simultaneous temperature and refractive index discrimination.

  4. Focused-ion-beam induced interfacial intermixing of magnetic bilayers for nanoscale control of magnetic properties

    International Nuclear Information System (INIS)

    Burn, D M; Atkinson, D; Hase, T P A

    2014-01-01

    Modification of the magnetic properties in a thin-film ferromagnetic/non-magnetic bilayer system by low-dose focused ion-beam (FIB) induced intermixing is demonstrated. The highly localized capability of FIB may be used to locally control magnetic behaviour at the nanoscale. The magnetic, electronic and structural properties of NiFe/Au bilayers were investigated as a function of the interfacial structure that was actively modified using focused Ga + ion irradiation. Experimental work used MOKE, SQUID, XMCD as well as magnetoresistance measurements to determine the magnetic behavior and grazing incidence x-ray reflectivity to elucidate the interfacial structure. Interfacial intermixing, induced by low-dose irradiation, is shown to lead to complex changes in the magnetic behavior that are associated with monotonic structural evolution of the interface. This behavior may be explained by changes in the local atomic environment within the interface region resulting in a combination of processes including the loss of moment on Ni and Fe, an induced moment on Au and modifications to the spin-orbit coupling between Au and NiFe. (paper)

  5. Mechanisms of material removal and mass transport in focused ion beam nanopore formation

    Energy Technology Data Exchange (ETDEWEB)

    Das, Kallol, E-mail: das7@illinois.edu; Johnson, Harley T., E-mail: htj@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, MC-244, Urbana, Illinois 61801 (United States); Freund, Jonathan B., E-mail: jbfreund@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, MC-244, Urbana, Illinois 61801 (United States); Department of Aerospace Engineering, University of Illinois at Urbana-Champaign, 306 Talbot Laboratory, MC-236, 104 South Wright Street Urbana, Illinois 61801 (United States)

    2015-02-28

    Despite the widespread use of focused ion beam (FIB) processing as a material removal method for applications ranging from electron microscope sample preparation to nanopore processing for DNA sequencing, the basic material removal mechanisms of FIB processing are not well understood. We present the first complete atomistic simulation of high-flux FIB using large-scale parallel molecular dynamics (MD) simulations of nanopore fabrication in freestanding thin films. We focus on the root mechanisms of material removal and rearrangement and describe the role of explosive boiling in forming nanopores. FIB nanopore fabrication is typically understood to occur via sputter erosion. This can be shown to be the case in low flux systems, where individual ion impacts are sufficiently separated in time that they may be considered as independent events. But our detailed MD simulations show that in high flux FIB processing, above a threshold level at which thermal effects become significant, the primary mechanism of material removal changes to a significantly accelerated, thermally dominated process. Under these conditions, the target is heated by the ion beam faster than heat is conducted away by the material, leading quickly to melting, and then continued heating to nearly the material critical temperature. This leads to explosive boiling of the target material with spontaneous bubble formation and coalescence. Mass is rapidly rearranged at the atomistic scale, and material removal occurs orders of magnitude faster than would occur by simple sputtering. While the phenomenology is demonstrated computationally in silicon, it can be expected to occur at lower beam fluxes in other cases where thermal conduction is suppressed due to material properties, geometry, or ambient thermal conditions.

  6. Study of electrostatic acceleration of H and D negative ion beams. Application to the 1 MeV SINGAP accelerator; Etude de l`acceleration electrostatique de faisceaux d`ions negatifs H / D de haute puissance. Application a l`accelerateur SINGAP de 1MeV

    Energy Technology Data Exchange (ETDEWEB)

    Bucalossi, J [Association Euratom-CEA Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. de Recherches sur la Fusion Controlee; [Paris-6 Univ., 75 (France)

    1998-04-01

    In the framework of the development of a neutral beam injection system for ITER (International Thermonuclear Experimental Reactor), the electrostatic acceleration of negative ion H/D beams up to an energy of 1 MeV has been studied. With the support of 3-D beam trajectory calculations, the limitations of the multi-aperture multi-grid acceleration concept, ITER reference concept, ar shown and the relevance of a new concept, called SINGAP, is demonstrated. In a SINGAP accelerator, beamlets are pre-accelerated with a classical triode multi-apertures system up to {approx} 50 keV. The pre-accelerated beamlets are then merged into a single beam and post-accelerated at high energy through a large SINGle APerture using one SINgle GAP. The optics of one pre-accelerated beamlet has been studied on the INCA triode accelerator at the Ecole Polytechnique. A diagnostic has been developed to measure the emittance of the pre-accelerated beamlet. A diagnostic has been developed to measure the emittance of the pre-accelerated beamlet. Values of {approx} 0.03{pi}.mrad.cm for the effective normalized emittance and {approx} 12 mrad for the minimal beam divergence have been found (Hbeams). Besides, the effects of co-extracted electrons and pressure in the transport region on the beam optics are shown and experiment is compared to beam numerical simulation. On the Cadarache 1 MeV, 100 mA, D- SINGAP accelerator, beams of 1 s pulse were produced at a level of 900 keV (without observing breakdowns between electrodes). SINGAP optics has been investigated using an infrared calorimetric beam profile diagnostic (2-D) and a neutral beam profile diagnostic (1-D). The control of the beam optics is very satisfying: a divergence of {approx} 10 mrad has been measured, and 3-D simulations and experimentation are in good agreement. (author) 117 refs.

  7. Characterization of Bragg gratings in Al2O3 waveguides fabricated by focused ion beam milling and laser interference lithography

    NARCIS (Netherlands)

    Ay, F.; Bernhardi, Edward; Agazzi, L.; Bradley, J.; Worhoff, Kerstin; Pollnau, Markus; de Ridder, R.M.

    Optical grating cavities in Al2O3 channel waveguides were successfully defined by focused ion beam milling and laser interference lithography. Both methods are shown to be suitable for realizing resonant structures for on-chip waveguide lasers.

  8. Performance of a shallow-focus applied-magnetic-field diode for ion-beam-transport experiments

    Energy Technology Data Exchange (ETDEWEB)

    Young, F.C.; Neri, J.M.; Ottinger, P.F. [Naval Research Lab., Washington, DC (United States); Rose, D.V. [JAYCOR, Vienna (Vatican City State, Holy See); Jones, T.G.; Oliver, B.V.

    1997-12-31

    An applied-magnetic-field ion diode to study the transport of intense ion beams for light-ion inertial confinement fusion is being operated on the Gamble II generator at NRL. A Large-area (145-cm{sup 2}), shallow-focusing diode is used to provide the ion beam required for self-pinched transport (SPT) experiments. Experiments have demonstrated focusing at 70 cm for 1.2-MV, 40-kA protons. Beyond the focus, the beam hollows out consistent with 20--30 mrad microdivergence. The effect of the counter-pulse B-field on altering the ion-beam trajectories and improving the focus has been diagnosed with a multiple-pinhole-camera using radiachromic film. This diagnostic is also used to determine the radial and azimuthal uniformity of ion emission at the anode for different B-field conditions. Increasing the diode voltage to 1.5 MV and optimizing the ion current are planned before initiating SPT experiments. Experiments to measure the spatial beam profile at focus, i.e., the SPT channel entrance, are in progress. Results are presented.

  9. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    Science.gov (United States)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  10. Prize for Industrial Applications of Physics Talk: Low energy spread Ion source for focused ion beam systems-Search for the holy grail

    Science.gov (United States)

    Ward, Bill

    2011-03-01

    In this talk I will cover my personal experiences as a serial entrepreneur and founder of a succession of focused ion beam companies (1). Ion Beam Technology, which developed a 200kv (FIB) direct ion implanter (2). Micrion, where the FIB found a market in circuit edit and mask repair, which eventually merged with FEI corporation. and (3). ALIS Corporation which develop the Orion system, the first commercially successful sub-nanometer helium ion microscope, that was ultimately acquired by Carl Zeiss corporation. I will share this adventure beginning with my experiences in the early days of ion beam implantation and e-beam lithography which lead up to the final breakthrough understanding of the mechanisms that govern the successful creation and operation of a single atom ion source.

  11. Leaky mode suppression in planar optical waveguides written in Er:TeO{sub 2}–WO{sub 3} glass and CaF{sub 2} crystal via double energy implantation with MeV N{sup +} ions

    Energy Technology Data Exchange (ETDEWEB)

    Bányász, I., E-mail: banyasz@sunserv.kfki.hu [Department of Crystal Physics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O.B. 49, H-1525 Budapest (Hungary); Zolnai, Z.; Fried, M. [Research Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O.B. 49, Budapest H-1525 (Hungary); Berneschi, S. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); “Enrico Fermi” Center for Study and Research, Piazza del Viminale 2, 00184 Roma (Italy); Pelli, S.; Nunzi-Conti, G. [MDF-Lab, “Nello Carrara” Institute of Applied Physics, IFAC-CNR, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy)

    2014-05-01

    Ion implantation proved to be an universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er{sup 3+}-doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 μm, as they exhibit large stimulated cross sections and broad emission bandwidth. Calcium fluoride is an excellent optical material, due to its perfect optical characteristics from UV wavelengths up to near IR. It has become a promising laser host material (doped with rare earth elements). Ion implantation was also applied to optical waveguide fabrication in CaF{sub 2} and other halide crystals. In the present work first single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 μm was observed in Er:Te glass, and up to 980 nm in CaF{sub 2}. Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.2 MeV were performed to suppress leaky modes by increasing barrier width.

  12. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

    2011-12-15

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  13. Thermoluminescence of sol–gel derived Y{sub 2}O{sub 3}:Nd{sup 3+} nanophosphor exposed to 100 MeV Si{sup 8+} ions and gamma rays

    Energy Technology Data Exchange (ETDEWEB)

    Shivaramu, N.J. [Department of Physics, Jnanabharathi Campus, Bangalore University, Bangalore 560 056 (India); Lakshminarasappa, B.N., E-mail: bnlnarassappa@rediffmail.com [Department of Physics, Jnanabharathi Campus, Bangalore University, Bangalore 560 056 (India); Nagabhushana, K.R., E-mail: bhushankr@gmail.com [Department of Physics (S and H), PES Institute of Technology, 100 Feet Ring Road, BSK III stage, Bangalore 560085 (India); Singh, Fouran [Inter University Accelerator Centre, P.O. Box No. 10502, New Delhi 110 067 (India)

    2015-07-15

    Highlights: • Nanocrystalline Nd{sup 3+} doped Y{sub 2}O{sub 3} was synthesized by sol–gel technique. • Pellets of Y{sub 2}O{sub 3}:Nd{sup 3+} were irradiated with 100 MeV swift Si{sup 8+} ions and γ-rays. • The relative TL efficiency of Y{sub 2}O{sub 3}:Nd{sup 3+} of 100 MeV Si ion to γ-rays of {sup 60}Co and is found to be 0.059. • Gamma irradiated Y{sub 2}O{sub 3}:Nd{sup 3+} was observed, it is suitable for space dosimetry application. - Abstract: Nanocrystalline Nd{sup 3+} doped Y{sub 2}O{sub 3} was synthesized by sol–gel technique. Crystallite size calculated by Scherrer relation was found to be in the range 28–30 nm. Fourier transform infrared spectroscopy (FTIR) revealed Y−O, −OH stretching and C−O bending bonds. Pellets of Y{sub 2}O{sub 3}:Nd{sup 3+} were irradiated with 100 MeV swift Si{sup 8+} ions and γ-rays for the fluence/dose in the range 3 × 10{sup 11}–3 × 10{sup 13} ions cm{sup −2} and 1.0{sup -}14 kGy respectively. A prominent thermoluminescence (TL) glow with peak at 527 K and a weak one with peak at 600 K were observed in Si{sup 8+} ion irradiated samples while, a prominent TL glow with peak at 393 K besides a shoulder at 434 K and a weak one with peak at 581 K were observed in γ-irradiated phosphors. The relative TL efficiency of Y{sub 2}O{sub 3}:Nd{sup 3+} of 100 MeV Si ion beam to γ-rays of {sup 60}Co and is found to be 0.059. The TL kinetic parameters were calculated using Chen’s peak shape method and the results obtained are discussed. Y{sub 2}O{sub 3}:Nd{sup 3+} was observed for its use in space dosimetry application.

  14. Electron beam propagation in the ion focused regime (IFR) with the experimental test accelerator (ETA)

    International Nuclear Information System (INIS)

    Struve, K.W.; Lauer, E.J.; Chambers, F.W.

    1983-01-01

    The IFR is a well-known stable, low pressure (0.10 to 0.120 torr in air) propagation window. Secondary electrons created by collisions of beam electrons with gas atoms are rapidly expelled by the strong radial electric field of the beam charge. The ions that remain inside the beam partially neutralize the electric field, allowing magnetic pinch forces to focus the beam. Experiments with the ETA beam have re-verified this stable window and are reported. Image forces from a close wall IFR propagation tank are also experimentally shown to center the beam and damp transverse oscillations. Results of experiments using 5 and 15 cm dia beam tubes are reported. For p tau > 2 torr-nsec (gas pressure x time into pulse the beam charge becomes completely neutralized by the ions, allowing a build up of plasma and resultant beam-plasma instabilities. The onset of these instabilities has been measured using rf pickup loops (0 to 2 GHz) and microwave detectors (6 to 40 GHz), and are also reported

  15. submitter Light Extraction From Scintillating Crystals Enhanced by Photonic Crystal Structures Patterned by Focused Ion Beam

    CERN Document Server

    Modrzynski, Pawel; Knapitsch, Arno; Kunicki, Piotr; Lecoq, Paul; Moczala, Magdalena; Papakonstantinou, Ioannis; Auffray, Etiennette

    2016-01-01

    “Photonic Crystals (PhC)” have been used in a variety of fields as a structure for improving the light extraction efficiency from materials with high index of refraction. In previous work we already showed the light extraction improvement of several PhC covered LYSO crystals in computer simulations and practical measurements. In this work, new samples are made using different materials and techniques which allows further efficiency improvements. For rapid prototyping of PhC patterns on scintillators we tested a new method using “Focused Ion Beam (FIB)” patterning. The FIB machine is a device similar to a “Scanning Electron Microscope (SEM)”, but it uses ions (mainly gallium) instead of electrons for the imaging of the samples' surface. The additional feature of FIB devices is the option of surface patterning in nano-scale which was exploited for our samples. Three samples using FIB patterning have been produced. One of them is a direct patterning of the extraction face of a 0.8×0.8×10 $mm^3$ LYS...

  16. Electron beam propagation in the ion-focused and resistive regimes

    International Nuclear Information System (INIS)

    Hubbard, R.F.; Lampe, M.; Fernsler, R.; Slinker, S.P.

    1993-01-01

    Pinched propagation of intense relativistic electron beams occurs in several distinct pressure regimes. In low density gases (∼ 1-100 mtorr), the beam propagates in the ion-focused regime (IFR). The beam ionizes the neutral gas, and plasma electrons are ejected, leaving behind a positive ion column which pinches the beam electrostatically. At gas densities near 1 atm, the beam-generated plasma is resistive and the pinch effect is provided by the self-magnetic field of the beam. Beam transport experiments in both regimes have been performed on the Advanced Test Accelerator (ATA) at Lawrence Livermore National Lab. and on SuperIBEX at the Naval Research Lab. IFR methods have been employed in both experiments to transport the beam prior to injection into the air and to introduce a head-to-tail taper in the beam radius. IFR simulations have shown how the resulting beam radius and emittance profiles are influenced by gas density, chamber dimensions and entrance and exit foils. Beam propagation in dense gas is subject to disruption by the resistive hose instability. However, both experiments and simulations have shown that the emittance variation introduced by IFR transport can substantially reduce the growth of the hose instability. Both experiments have also propagated beams in reduced-density channels. Simulations predict that the channel may in some cases produce a moderate stabilizing and tracking effect arising from plasma currents flowing at the edge of the channel

  17. Full three-dimensional simulation of focused ion beam micro/nanofabrication

    International Nuclear Information System (INIS)

    Kim, Heung-Bae; Hobler, Gerhard; Steiger, Andreas; Lugstein, Alois; Bertagnolli, Emmerich

    2007-01-01

    2D focused ion beam simulation is only capable of simulating the topography where the surface shape does not change along the third dimension, both in the final result and during processing. In this paper we show that a 3D topography forms under the beam even though the variation in the final result along the third direction is small. We present the code AMADEUS 3D (advanced modelling and design environment for sputter processes), which is capable of simulating the surface topography in 3D space including angle-dependent sputtering and redeposition. The surface is represented by a structured or unstructured grid, and the nodes are moved according to the calculated sputtering and redeposition fluxes. In addition, experiments have been performed on nanodot formation and box milling for a case where a 3D temporary topography forms. The excellent agreement validates the code and shows the completeness of the model

  18. Mechanical properties of micro-sized copper bending beams machined by the focused ion beam technique

    International Nuclear Information System (INIS)

    Motz, C.; Schoeberl, T.; Pippan, R.

    2005-01-01

    Micro-sized bending beams with thicknesses, t, from 7.5 down to 1.0 μm were fabricated with the focused ion beam technique from a copper single crystal with an {1 1 1} orientation. The beams were loaded with a nano-indenter and the force vs. displacement curves were recorded. A strong size effect was found where the flow stress reaches almost 1 GPa for the thinnest beams. A common strain gradient plasticity approach was used to explain the size effect. However, the strong t -1.14 dependence of the flow stress could not be explained by this model. Additionally, the combination of two other dislocation mechanisms is discussed: the limitation of available dislocation sources and a dislocation pile-up at the beam centre. The contribution of the pile-up stress to the flow stress gives a t -1 dependence, which is in good agreement with the experimental results

  19. Focused ion beam milling of nanocavities in single colloidal particles and self-assembled opals

    International Nuclear Information System (INIS)

    Woldering, Leon A; Otter, A M; Husken, Bart H; Vos, Willem L

    2006-01-01

    We present a new method of realizing single nanocavities in individual colloidal particles on the surface of silicon dioxide artificial opals using a focused ion beam milling technique. We show that both the radius and the position of the nanocavity can be controlled with nanometre precision, to radii as small as 40 nm. The relation between the defect size and the milling time has been established. We confirmed that milling not only occurs on the surface of the spheres, but into and through them as well. We also show that an array of nanocavities can be fashioned. Structurally modified colloids have interesting potential applications in nanolithography, as well as in chemical sensing and solar cells, and as photonic crystal cavities

  20. Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

    International Nuclear Information System (INIS)

    Nagata, T.; Haemori, M.; Chikyow, T.

    2009-01-01

    The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

  1. Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, T.; Haemori, M.; Chikyow, T. [Advanced Electric Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2009-05-15

    The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

  2. Integrated lasers in crystalline double tungstates with focused-ion-beam nanostructured photonic cavities

    International Nuclear Information System (INIS)

    Ay, F; Iñurrategui, I; Geskus, D; Aravazhi, S; Pollnau, M

    2011-01-01

    Deeply etched Bragg gratings were fabricated by focused ion beam (FIB) milling in KGd x Lu 1-x (WO 4 ) 2 :Yb 3+ to obtain photonic cavity structures. By optimizing parameters such as dose per area, dwell time and pixel resolution the redeposition effects were minimized and grating structures more than 4 μm in depth with an improved sidewall angle of ∼ 5° were achieved. Fabry-Perot microcavities were defined and used to assess the optical performance of the grating structures at ∼ 1530 nm. An on-chip integrated laser cavity at ∼ 980 nm was achieved by defining a FIB reflective grating and FIB polished waveguide end-facet. With this cavity, an on-chip integrated waveguide laser in crystalline potassium double tungstate was demonstrated

  3. Effects of focused ion beam induced damage on the plasticity of micropillars

    International Nuclear Information System (INIS)

    El-Awady, Jaafar A.; Woodward, Christopher; Dimiduk, Dennis M.; Ghoniem, Nasr M.

    2009-01-01

    The hardening effects of focused ion beam (FIB) induced damage produced during the fabrication of micropillars are examined by introducing a surface layer of nanosized obstacles into a dislocation dynamics simulation. The influence of the depth and strength of the obstacles as a function of pillar diameter is assessed parametrically. We show that for a selected set of sample sizes between 0.5 and 1.0 μm, the flow strength can increase by 10-20 %, for an obstacle strength of 750 MPa, and damage depth of 100 nm. On the other hand, for sizes larger and smaller than this range, the effect of damage is negligible. Results show that the obstacles formed during the FIB milling may be expected to alter the microstructure of micropillars, however, they have a negligible effect on the observed size-strength scaling laws.

  4. Ultra-high aspect ratio replaceable AFM tips using deformation-suppressed focused ion beam milling

    International Nuclear Information System (INIS)

    Savenko, Alexey; Yildiz, Izzet; Petersen, Dirch Hjorth; Bøggild, Peter; Bartenwerfer, Malte; Krohs, Florian; Oliva, Maria; Harzendorf, Torsten

    2013-01-01

    Fabrication of ultra-high aspect ratio exchangeable and customizable tips for atomic force microscopy (AFM) using lateral focused ion beam (FIB) milling is presented. While on-axis FIB milling does allow high aspect ratio (HAR) AFM tips to be defined, lateral milling gives far better flexibility in terms of defining the shape and size of the tip. Due to beam-induced deformation, it has so far not been possible to define HAR structures using lateral FIB milling. In this work we obtain aspect ratios of up to 45, with tip diameters down to 9 nm, by a deformation-suppressing writing strategy. Several FIB milling strategies for obtaining sharper tips are discussed. Finally, assembly of the HAR tips on a custom-designed probe as well as the first AFM scanning is shown. (paper)

  5. Electron beam effects on the spectroscopy of multiply charged ions in plasma focus experiments

    International Nuclear Information System (INIS)

    Abdallah, J.; Clark, R.E.H.; Faenov, A.Y.; Karpinski, L.; Pikuz, S.A.; Romanova, V.M.; Sadowski, M.; Scholz, M.; Szydlowski, A.

    1999-01-01

    Argon-hydrogen mixture plasma focus experiments performed at the Warsaw Institute of Plasma Physics and Laser Microfusion show detailed space resolved spectra for Ar K-shell satellite lines up to F-like Ar and K-alpha of Ar. These transitions originating from autoionizing levels are caused by collisions of ions with the energetic electron beams which are created by the constrictions of the plasma column due to the development of magnetohydrodynamic instabilities. A collisional-radiative model was constructed using a non-Maxwellian electron energy distribution consisting of a thermal Maxwellian part plus a Gaussian part to represent the high-energy electron beam. The shapes of the observed satellite structures are consistent with the calculated spectrum for electron temperatures between 20 and 230 eV, and beam densities of about 10 -3 times the plasma electron density. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  6. Application of focused ion beam for the fabrication of AFM probes

    Science.gov (United States)

    Kolomiytsev, A. S.; Lisitsyn, S. A.; Smirnov, V. A.; Fedotov, A. A.; Varzarev, Yu N.

    2017-10-01

    The results of an experimental study of the probe tips fabrication for critical-dimension atomic force microscopy (CD-AFM) using the focused ion beam (FIB) induced deposition are presented. Methods of the FIB-induced deposition of tungsten and carbon onto the tip of an AFM probe are studied. Based on the results obtained in the study, probes for the CD-AFM technique with a tip height about 1 μm and radius of 20 nm were created. The formation of CD-AFM probes by FIB-induced deposition allows creating a high efficiency tool for nanotechnology and nanodiagnostics. The use of modified cantilevers allows minimizing the artefacts of AFM images and increasing the accuracy of the relief measurement. The obtained results can be used for fabrication of AFM probes for express monitoring of the technological process in the manufacturing of the elements for micro- and nanoelectronics.

  7. Direct fabrication of nano-gap electrodes by focused ion beam etching

    International Nuclear Information System (INIS)

    Nagase, Takashi; Gamo, Kenji; Kubota, Tohru; Mashiko, Shinro

    2006-01-01

    A simple approach to increase the reliability of nano-gap electrode fabrication techniques is presented. The method is based on maskless sputter etching of Au electrodes using a focused ion beam (FIB) and in-situ monitoring of the etching steps by measuring a current fed to the Au electrodes. The in-situ monitoring is crucial to form nano-gaps much narrower than a FIB spot size. By using this approach, gaps of ∼3-6 nm are fabricated with the high yield of ∼90%, and most of the fabricated nano-gap electrodes showed high resistances of 10 GΩ-1 TΩ. The controllability of the fabrication steps is significantly improved by using triple-layered films consisting of top Ti, Au, and bottom adhesion Ti layers. The applicability of the fabricated nano-gap electrodes to electron transport studies of nano-sized objects is demonstrated by electrical measurement of Au colloidal nano-particles

  8. Electron beam effects on the spectroscopy of multiply charged ions in plasma focus experiments

    Energy Technology Data Exchange (ETDEWEB)

    Abdallah, J. [UCLA Plasma Physics Laboratory, Los Angeles, CA (United States); Clark, R.E.H. [Los Alamos National Laboratory, Los Alamos, NM (United States); Faenov, A.Y. [MISDC, NPO ' VNIIFTRI' , Mendeleevo, Moscow region, 141570 (Russian Federation); Karpinski, L. [Institute of Plasma Physics and Laser Microfusion, Warsaw (Poland); Pikuz, S.A.; Romanova, V.M. [P. N. Lebedev Physical Institute, Moscow (Russian Federation); Sadowski, M. [Soltan Institute for Nuclear Studies, Swierk (Poland); Scholz, M.; Szydlowski, A. [Institute of Plasma Physics and Laser Microfusion, Warsaw (Poland)

    1999-05-01

    Argon-hydrogen mixture plasma focus experiments performed at the Warsaw Institute of Plasma Physics and Laser Microfusion show detailed space resolved spectra for Ar K-shell satellite lines up to F-like Ar and K-alpha of Ar. These transitions originating from autoionizing levels are caused by collisions of ions with the energetic electron beams which are created by the constrictions of the plasma column due to the development of magnetohydrodynamic instabilities. A collisional-radiative model wasconstructed using a non-Maxwellian electron energy distribution consisting of a thermal Maxwellian part plus a Gaussian part to represent the high-energy electron beam. The shapes of the observed satellite structures are consistent with the calculated spectrum for electron temperatures between 20 and 230 eV, and beam densities of about 10{sup -3} times the plasma electron density. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  9. Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces

    International Nuclear Information System (INIS)

    Portavoce, A; Kammler, M; Hull, R; Reuter, M C; Ross, F M

    2006-01-01

    We investigate the fundamental mechanism by which self-assembled Ge islands can be nucleated at specific sites on Si(001) using ultra-low-dose focused ion beam (FIB) pre-patterning. Island nucleation is controlled by a nanotopography that forms after the implantation of Ga ions during subsequent thermal annealing of the substrate. This nanotopography evolves during the annealing stage, changing from a nanoscale annular depression associated with each focused ion beam spot to a nanoscale pit, and eventually disappearing (planarizing). The correspondence of Ge quantum dot nucleation sites to the focused ion beam features requires a growth surface upon which the nanotopography is preserved. A further key observation is that the Ge wetting layer thickness is reduced in patterned regions, allowing the formation of islands on the templated regions without nucleation elsewhere. These results provide routes to the greatly enhanced design and control of quantum dot distributions and dimensions

  10. A new route to nanoscale tomographic chemical analysis: Focused ion beam-induced auger electron spectrosocpy

    Science.gov (United States)

    Parvaneh, Hamed

    This research project is aimed to study the application of ion-induced Auger electron spectroscopy (IAES) in combination with the characteristics of focused ion beam (FIB) microscopy for performing chemical spectroscopy and further evaluate its potential for 3-dimensional chemical tomography applications. The mechanism for generation of Auger electrons by bombarding ions is very different from its electron induced counterpart. In the conventional electron-induced Auger electron spectroscopy (EAES), an electron beam with energy typically in the range 1-10kV is used to excite inner-shell (core) electrons of the solid. An electron from a higher electron energy state then de-excites to fill the hole and the extra energy is then transferred to either another electron, i.e. the Auger electron, or generation of an X-ray (photon). In both cases the emitting particles have charac-teristic energies and could be used to identify the excited target atoms. In IAES, however, large excitation cross sections can occur by promotion of in-ner shell electrons through crossing of molecular orbitals. Originally such phenomenological excitation processes were first proposed [3] for bi-particle gas phase collision systems to explain the generation of inner shell vacancies in violent collisions. In addition to excitation of incident or target atoms, due to a much heavier mass of ions compared to electrons, there would also be a substantial momentum transfer from the incident to the target atoms. This may cause the excited target atom to recoil from the lattice site or alternatively sputter off the surface with the possibility of de-excitation while the atom is either in motion in the matrix or traveling in vacuum. As a result, one could expect differences between the spectra induced by incident electrons and ions and interpretation of the IAE spectra requires separate consideration of both excitation and decay processes. In the first stage of the project, a state-of-the-art mass

  11. Nano-Tomography of Porous Geological Materials Using Focused Ion Beam-Scanning Electron Microscopy

    Directory of Open Access Journals (Sweden)

    Yang Liu

    2016-10-01

    Full Text Available Tomographic analysis using focused ion beam-scanning electron microscopy (FIB-SEM provides three-dimensional information about solid materials with a resolution of a few nanometres and thus bridges the gap between X-ray and transmission electron microscopic tomography techniques. This contribution serves as an introduction and overview of FIB-SEM tomography applied to porous materials. Using two different porous Earth materials, a diatomite specimen, and an experimentally produced amorphous silica layer on olivine, we discuss the experimental setup of FIB-SEM tomography. We then focus on image processing procedures, including image alignment, correction, and segmentation to finally result in a three-dimensional, quantified pore network representation of the two example materials. To each image processing step we consider potential issues, such as imaging the back of pore walls, and the generation of image artefacts through the application of processing algorithms. We conclude that there is no single image processing recipe; processing steps need to be decided on a case-by-case study.

  12. High current density ion beam obtained by a transition to a highly focused state in extremely low-energy region

    Energy Technology Data Exchange (ETDEWEB)

    Hirano, Y., E-mail: y.hirano@aist.go.jp, E-mail: hirano.yoichi@phys.cst.nihon-u.ac.jp [Innovative Plasma Processing Group, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); College of Science and Technologies, Nihon University, Chiyodaku, Tokyo 101-0897 (Japan); Kiyama, S.; Koguchi, H. [Innovative Plasma Processing Group, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Fujiwara, Y.; Sakakita, H. [Innovative Plasma Processing Group, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Department of Engineering Mechanics and Energy, University of Tsukuba, Ibaraki 305-8577 (Japan)

    2015-11-15

    A high current density (≈3 mA/cm{sup 2}) hydrogen ion beam source operating in an extremely low-energy region (E{sub ib} ≈ 150–200 eV) has been realized by using a transition to a highly focused state, where the beam is extracted from the ion source chamber through three concave electrodes with nominal focal lengths of ≈350 mm. The transition occurs when the beam energy exceeds a threshold value between 145 and 170 eV. Low-level hysteresis is observed in the transition when E{sub ib} is being reduced. The radial profiles of the ion beam current density and the low temperature ion current density can be obtained separately using a Faraday cup with a grid in front. The measured profiles confirm that more than a half of the extracted beam ions reaches the target plate with a good focusing profile with a full width at half maximum of ≈3 cm. Estimation of the particle balances in beam ions, the slow ions, and the electrons indicates the possibility that the secondary electron emission from the target plate and electron impact ionization of hydrogen may play roles as particle sources in this extremely low-energy beam after the compensation of beam ion space charge.

  13. The JHP 200-MeV proton linear accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Takao [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

    1997-11-01

    A 200-MeV proton linear accelerator for the Japanese Hadron Project (JHP) has been designed. It consists of a 3-MeV radio-frequency quadrupole linac (RFQ), a 50-MeV drift tube linac (DTL) and a 200-MeV separated-type drift tube linac (SDTL). A frequency of 324 MHz has been chosen for all of the rf structures. A peak current of 30 mA (H{sup -} ions) of 400 {mu}sec pulse duration will be accelerated at a repetition rate of 25 Hz. A future upgrade plan up to 400 MeV is also presented, in which annular-coupled structures (ACS) of 972 MHz are used in an energy range of above 150 or 200 MeV. One of the design features is its high performance for a beam-loss problem during acceleration. It can be achieved by separating the transition point in the transverse motion from that of the longitudinal motion. The transverse transition at a rather low-energy range decreases the effects of space-charge, while the longitudinal transition at a rather high-energy range decreases the effects of nonlinear problems related to acceleration in the ACS. Coupled envelope equations and equipartitioning theory are used for the focusing design. The adoption of the SDTL structure improves both the effective shunt impedance and difficulties in fabricating drift tubes with focusing magnets. An accurate beam-simulation code on a parallel supercomputer was used for confirming any beam-loss problem during acceleration. (author)

  14. The study of the ion beam induced swelling in crystalline germanium irradiated by a 30 keV Ga+ focused ion beam

    International Nuclear Information System (INIS)

    Rubanov, S.; Munroe, P.R.; Stevens-Kalceff, M.

    2005-01-01

    The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga + focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of ∼10 17 ions/cm 2 . Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs

  15. Detection of nitro-based and peroxide-based explosives by fast polarity-switchable ion mobility spectrometer with ion focusing in vicinity of Faraday detector.

    Science.gov (United States)

    Zhou, Qinghua; Peng, Liying; Jiang, Dandan; Wang, Xin; Wang, Haiyan; Li, Haiyang

    2015-05-29

    Ion mobility spectrometer (IMS) has been widely deployed for on-site detection of explosives. The common nitro-based explosives are usually detected by negative IMS while the emerging peroxide-based explosives are better detected by positive IMS. In this study, a fast polarity-switchable IMS was constructed to detect these two explosive species in a single measurement. As the large traditional Faraday detector would cause a trailing reactant ion peak (RIP), a Faraday detector with ion focusing in vicinity was developed by reducing the detector radius to 3.3 mm and increasing the voltage difference between aperture grid and its front guard ring to 591 V, which could remove trailing peaks from RIP without loss of signal intensity. This fast polarity-switchable IMS with ion focusing in vicinity of Faraday detector was employed to detect a mixture of 10 ng 2,4,6-trinitrotoluene (TNT) and 50 ng hexamethylene triperoxide diamine (HMTD) by polarity-switching, and the result suggested that [TNT-H](-) and [HMTD+H](+) could be detected in a single measurement. Furthermore, the removal of trailing peaks from RIP by the Faraday detector with ion focusing in vicinity also promised the accurate identification of KClO4, KNO3 and S in common inorganic explosives, whose product ion peaks were fairly adjacent to RIP.

  16. Interaction of powerful hot plasma and fast ion streams with materials in dense plasma focus devices

    Energy Technology Data Exchange (ETDEWEB)

    Chernyshova, M., E-mail: maryna.chernyshova@ipplm.pl [Institute of Plasma Physics and Laser Microfusion, Warsaw (Poland); Gribkov, V.A. [Institute of Plasma Physics and Laser Microfusion, Warsaw (Poland); Institution of Russian Academy of Sciences A.A. Baikov Institute of Metallurgy and Material Science RAS, Moscow (Russian Federation); Kowalska-Strzeciwilk, E.; Kubkowska, M.; Miklaszewski, R.; Paduch, M.; Pisarczyk, T.; Zielinska, E. [Institute of Plasma Physics and Laser Microfusion, Warsaw (Poland); Demina, E.V.; Pimenov, V.N.; Maslyaev, S.A. [Institution of Russian Academy of Sciences A.A. Baikov Institute of Metallurgy and Material Science RAS, Moscow (Russian Federation); Bondarenko, G.G. [National Research University Higher School of Economics (HSE), Moscow (Russian Federation); Vilemova, M.; Matejicek, J. [Institute of Plasma Physics of the CAS, Prague (Czech Republic)

    2016-12-15

    Highlights: • Materials perspective for use in mainstream nuclear fusion facilities were studied. • Powerful streams of hot plasma and fast ions were used to induce irradiation. • High temporal, spatial, angular and spectral resolution available in experiments. • Results of irradiation were investigated by number of analysis techniques. - Abstract: A process of irradiating and ablating solid-state targets with hot plasma and fast ion streams in two Dense Plasma Focus (DPF) devices – PF-6 and PF-1000 was examined by applying a number of diagnostics of nanosecond time resolution. Materials perspective for use in chambers of the mainstream nuclear fusion facilities (mainly with inertial plasma confinement like NIF and Z-machine), intended both for the first wall and for constructions, have been irradiated in these simulators. Optical microscopy, SEM, Atomic Emission Spectroscopy, images in secondary electrons and in characteristic X-ray luminescence of different elements, and X-ray elemental analysis, gave results on damageability for a number of materials including low-activated ferritic and austenitic stainless steels, β-alloy of Ti, as well as two types of W and a composite on its base. With an increase of the number of shots irradiating the surface, its morphology changes from weakly pronounced wave-like structures or ridges to strongly developed ones. At later stages, due to the action of the secondary plasma produced near the target materials they melted, yielding both blisters and a fracturing pattern: first along the grain and then “in-between” the grains creating an intergranular net of microcracks. At the highest values of power flux densities multiple bubbles appeared. Furthermore, in this last case the cracks were developed because of microstresses at the solidification of melt. Presence of deuterium within the irradiated ferritic steel surface nanolayers is explained by capture of deuterons in lattice defects of the types of impurity atoms

  17. Subsurface Examination of a Foliar Biofilm Using Scanning Electron- and Focused-Ion-Beam Microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, Patricia K.; Arey, Bruce W.; Mahaffee, Walt F.

    2011-08-01

    The dual beam scanning electron microscope, equipped with both a focused ion- and scanning electron- beam (FIB SEM) is a novel tool for the exploration of the subsurface structure of biological tissues. The FIB can remove a predetermined amount of material from a selected site to allow for subsurface exploration and when coupled with SEM or scanning ion- beam microscopy (SIM) could be suitable to examine the subsurface structure of bacterial biofilms on the leaf surface. The suitability of chemical and cryofixation was examined for use with the FIB SEM to examine bacterial biofilms on leaf surfaces. The biological control agent, Burkholderia pyroccinia FP62, that rapidly colonizes the leaf surface and forms biofilms, was inoculated onto geranium leaves and incubated in a greenhouse for 7 or 14 days. Cryofixation was not suitable for examination of leaf biofilms because it created a frozen layer over the leaf surface that cracked when exposed to the electron beam and the protective cap required for FIB milling could not be accurately deposited. With chemically fixed samples, it was possible to precisely FIB mill a single cross section (5 µm) or sequential cross sections from a single site without any damage to the surrounding surface. Biofilms, 7 days post-inoculation (DPI), were composed of 2 to 5 bacterial cell layers while biofilms 14 DPI ranged from 5 to greater than 30 cell layers. Empty spaces between bacteria cells in the subsurface structure were observed in biofilms 7- and 14-DPI. Sequential cross sections inferred that the empty spaces were often continuous between FP62 cells and could possibly make up a network of channels throughout the biofilm. FIB SEM was a useful tool to observe the subsurface composition of a foliar biofilm.

  18. 3D magnetic nanostructures grown by focused electron and ion beam induced deposition

    Science.gov (United States)

    Fernandez-Pacheco, Amalio

    Three-dimensional nanomagnetism is an emerging research area, where magnetic nanostructures extend along the whole space, presenting novel functionalities not limited to the substrate plane. The development of this field could have a revolutionary impact in fields such as electronics, the Internet of Things or bio-applications. In this contribution, I will show our recent work on 3D magnetic nanostructures grown by focused electron and ion beam induced deposition. This 3D nano-printing techniques, based on the local chemical vapor deposition of a gas via the interaction with electrons and ions, makes the fabrication of complex 3D magnetic nanostructures possible. First, I will show how by exploiting different growth regimes, suspended Cobalt nanowires with modulated diameter can be patterned, with potential as domain wall devices. Afterwards, I will show recent results where the synthesis of Iron-Gallium alloys can be exploited in the field of artificial multiferroics. Moreover, we are developing novel methodologies combining physical vapor deposition and 3D nano-printing, creating Permalloy 3D nanostrips with controllable widths and lengths up to a few microns. This approach has been extended to more complex geometries by exploiting advanced simulation growth techniques combining Monte Carlo and continuum model methods. Throughout the talk, I will show the methodology we are following to characterize 3D magnetic nanostructures, by combining magneto-optical Kerr effect, scanning probe microscopy and electron and X-R magnetic imaging, and I will highlight some of the challenges and opportunities when studying these structures. I acknowledge funding from EPSRC and the Winton Foundation.

  19. Rapid prototyping of magnetic tunnel junctions with focused ion beam processes

    International Nuclear Information System (INIS)

    Persson, Anders; Thornell, Greger; Nguyen, Hugo

    2010-01-01

    Submicron-sized magnetic tunnel junctions (MTJs) are most often fabricated by time-consuming and expensive e-beam lithography. From a research and development perspective, a short lead time is one of the major concerns. Here, a rapid process scheme for fabrication of micrometre size MTJs with focused ion beam processes is presented. The magnetic properties of the fabricated junctions are investigated in terms of magnetic domain structure, tunnelling magnetoresistance (TMR) and coercivity, with extra attention given to the effect of Ga implantation from the ion beam. In particular, the effect of the implantation on the minimum junction size and the magnetization of the sensing layer are studied. In the latter case, magnetic force microscopy and micromagnetic simulations, with the object-oriented micromagnetic framework (OOMMF), are used to study the magnetization reversal. The fabricated junctions show considerable coercivity both along their hard and easy axes. Interestingly, the sensing layer exhibits two remanent states: one with a single and one with a double domain. The hard axis TMR loop has kinks at about ±20 mT which is attributed to a non-uniform lateral coercivity, where the rim of the junctions, which is subjected to Ga implantation from the flank of the ion beam, is more coercive than the unirradiated centre. The width of the coercive rim is estimated to be 160 nm from the hard axis TMR loop. The easy axis TMR loop shows more coercivity than an unirradiated junction and, this too, is found to stem from the coercive rim, as seen from the simulations. It is concluded that the process scheme has three major advantages. Firstly, it has a high lateral and depth resolution—the depth resolution is enhanced by end point detection—and is capable of making junctions of sizes down towards the limit set by the width of the irradiated rim. Secondly, the most delicate process steps are performed in the unbroken vacuum enabling the use of materials prone to

  20. Formation of dislocations and hardening of LiF under high-dose irradiation with 5-21 MeV {sup 12}C ions

    Energy Technology Data Exchange (ETDEWEB)

    Zabels, R.; Manika, I.; Maniks, J.; Grants, R. [Institute of Solid State Physics, University of Latvia, Riga (Latvia); Schwartz, K. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Dauletbekova, A.; Baizhumanov, M. [L.N. Gumilyov Eurasian National University, Astana (Kazakhstan); Zdorovets, M. [Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-05-15

    The emergence of dislocations and hardening of LiF crystals irradiated to high doses with {sup 12}C ions have been investigated using chemical etching, AFM, nanoindentation, and thermal annealing. At fluences ensuring the overlapping of tracks (Φ ≥6 x 10{sup 11} ions/cm{sup 2}), the formation of dislocation-rich structure and ion-induced hardening is observed. High-fluence (10{sup 15} ions/cm{sup 2}) irradiation with {sup 12}C ions causes accumulation of extended defects and induces hardening comparable to that reached by heavy ions despite of large differences in ion mass, energy, energy loss, and track morphology. The depth profiles of hardness indicate on a notable contribution of elastic collision mechanism (nuclear loss) in the damage production and hardening. The effect manifests at the end part of the ion range and becomes significant at high fluences (≥10{sup 14} ions/cm{sup 2}). (orig.)

  1. Evaluation of the effect of anode groove pitch to ion beam focusibility on spherical plasma focus diode

    Energy Technology Data Exchange (ETDEWEB)

    Imanari, K [Oyama National College of Technology (Japan). Department of Electrical Engineering; Jiang, W; Masugata, K; Yatsui, K [Nagaoka Univ. of Technology (Japan). Laboratory of Beam Technology

    1997-12-31

    A new PIC simulation code was developed to evaluate the effect of anode plasma nonuniformity on LIB focusibility. The plasma nonuniformity was modelled by inducing anode grooves in the code. In the experimental conditions, groove pitch about 2.2 mm and groove width of 1.0 mm, the simulation results are in a good agreement with the observed data. At a groove pitch of 2.4 mm, the local divergence was very small, although the focal length was very long. It was inferred that the focusibility of SPFD will be determined by the z-deflection angle rather than the local divergence angle. Modification of the anode curvature may be advantageous to get a higher power density on the focal point. (author). 6 figs., 3 refs.

  2. Enhanced collective focusing of intense neutralized ion beam pulses in the presence of weak solenoidal magnetic fields

    International Nuclear Information System (INIS)

    Dorf, Mikhail A.; Davidson, Ronald C.; Kaganovich, Igor D.; Startsev, Edward A.

    2012-01-01

    The design of ion drivers for warm dense matter and high energy density physics applications and heavy ion fusion involves transverse focusing and longitudinal compression of intense ion beams to a small spot size on the target. To facilitate the process, the compression occurs in a long drift section filled with a dense background plasma, which neutralizes the intense beam self-fields. Typically, the ion bunch charge is better neutralized than its current, and as a result a net self-pinching (magnetic) force is produced. The self-pinching effect is of particular practical importance, and is used in various ion driver designs in order to control the transverse beam envelope. In the present work we demonstrate that this radial self-focusing force can be significantly enhanced if a weak (B ∼ 100 G) solenoidal magnetic field is applied inside the neutralized drift section, thus allowing for substantially improved transport. It is shown that in contrast to magnetic self-pinching, the enhanced collective self-focusing has a radial electric field component and occurs as a result of the overcompensation of the beam charge by plasma electrons, whereas the beam current becomes well-neutralized. As the beam leaves the neutralizing drift section, additional transverse focusing can be applied. For instance, in the neutralized drift compression experiments (NDCX) a strong (several Tesla) final focus solenoid is used for this purpose. In the present analysis we propose that the tight final focus in the NDCX experiments may possibly be achieved by using a much weaker (few hundred Gauss) magnetic lens, provided the ion beam carries an equal amount of co-moving neutralizing electrons from the preceding drift section into the lens. In this case the enhanced focusing is provided by the collective electron dynamics strongly affected by a weak applied magnetic field.

  3. Characteristics of ion spectrum in a low energy nitrogen operated plasma focus: application to the metallic substrates thermal treatment

    International Nuclear Information System (INIS)

    Kelly, H.; Lepone, A.; Marquez, A.

    1998-01-01

    Full text: This work presents the nitrogen ion spectrum characteristics in a Plasma Focus device, determined using a Thomson spectrometer and a Faraday cup, operated in the secondary electron collective mode. It is also discussed the thermal treatment and the re coating induce by ions incident on a metallic surface (AISI 304 steel) placed in front of the coaxial gun, when the device is operated with a Ti implant at the end of the central electrode

  4. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  5. Energy loss of /sup 14/N ions in Ni, Ag, and Cu and the lifetimes of the states at 2.3 and 3.9 MeV in /sup 14/N

    International Nuclear Information System (INIS)

    Zielinski, M.; Baek, W.Y.; Bharuth-Ram, K.; Gassen, D.; Neuwirth, W.

    1987-01-01

    The energy loss of /sup 14/N ions in Ni, Ag, and Cu has been investigated via the inverted Doppler-shift attenuation technique in the energy range up to 3.1 MeV. Excited /sup 14/N nuclei were produced in the reaction /sup 12/C( 3 He,p) /sup 14/N/sup */, and energy-loss information was obtained from the analysis of the Doppler-broadened 2.313-MeV γ-ray line, observed with a Ge(Li) detector. This analysis also yielded the lifetimes of the levels at 2.3 and 3.9 MeV in /sup 14/N, which were determined to be 97.7 +- 5.5 and 5.6 +- 1.1 fs, respectively, in reasonable agreement with previous measurements and theoretical calculations. The stopping cross sections obtained for all three stopping media are compared with existing theoretical calculations, especially with regard to the oscillations with the atomic number of the stopping medium

  6. Measurement of the Cupric Ion Concentration in the Simulation of the Focusing effect

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Je-Young; Hong, Seung-Hyun; Chung, Bum-Jin [Kyung Hee University, Seoul (Korea, Republic of)

    2015-10-15

    The Rayleigh number and aspect ratio (H/R) ranged from 8.49x10{sup 7} to 5.43x10{sup 9} and 0.135 to 0.541 respectively. In order to simulate the different temperature conditions of top and side wall, an electrical resistance was attached to the top wall so that it is mimics hotter wall condition. The heat transfer experiments were replaced by mass transfer experiments based on the heat and mass transfer analogy concept. A sulfuric acid-copper sulfate (H{sub 2}SO{sub 4} - CuSO{sub 4}) electroplating system was adopted as the mass transfer system. The experimental study was performed to investigate the focusing effect according to the different temperature conditions and the height in metallic layer. This work devised a method to simulate the different cooling conditions of the top and side walls and adopted an electrical resistance to the top plate. The electrical resistance was varied for the height of side wall. The experimental results agreed well with the Rayleigh-Benard convection correlations of Dropkin and Somerscales and Globe and Dropkin. The heat transfer was enhanced by increasing the electrical resistance and decreasing the height of side wall. The focusing effect at the side wall was improved by the hotter top wall condition. In order to overcome the limitations of mass transfer, this work tried to measure the cupric ion concentration. The methods of concentration measurement are RGB, Brightness, ICP and PIV. The key of RGB, Brightness and PIV method is the clear images of the thermal boundary layer.

  7. Manipulation of inverted and direct opals by a focused ion beam scanning electron microscope (FIB SEM)

    International Nuclear Information System (INIS)

    Magni, S; Milani, M; Tatti, F; Savoia, C

    2008-01-01

    Focused ion beam (FIB) milling techniques are presented aiming at the manipulation of both tin dioxide (SnO 2 ) inverted opals and polystyrene (PS) direct opals. Different SnO 2 opals are considered in order to estimate the regularity of their bulk after the production. A SnO 2 mesoporous monolith is FIB micromachined to make it suitable for optical applications. PS direct opals are structured by FIB milling at different scales. Ordered arrays of PS opals are modified by selectively removing a single sphere. In performing this task, we discuss the effects on the FIB milling due to the gas-assisted enhanced etching and to the binding of the nearest neighbours. Techniques to achieve imaging of PS opals in absence of a conductive coating are also brought up. Furthermore, isolated PS spheres are drilled with or without enhanced etching in order to produce controlled defects on them. The FIB-assisted manipulations we show may find potential applications in the field of photonic crystals, (bio)sensors and lithography assisted by colloidal masks.

  8. Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

    2017-11-01

    The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

  9. The theory and simulation of relativistic electron beam transport in the ion-focused regime

    International Nuclear Information System (INIS)

    Swanekamp, S.B.; Holloway, J.P.; Kammash, T.; Gilgenbach, R.M.

    1992-01-01

    Several recent experiments involving relativistic electron beam (REB) transport in plasma channels show two density regimes for efficient transport; a low-density regime known as the ion-focused regime (IFR) and a high-pressure regime. The results obtained in this paper use three separate models to explain the dependency of REB transport efficiency on the plasma density in the IFR. Conditions for efficient beam transport are determined by examining equilibrium solutions of the Vlasov--Maxwell equations under conditions relevant to IFR transport. The dynamic force balance required for efficient IFR transport is studied using the particle-in-cell (PIC) method. These simulations provide new insight into the transient beam front physics as well as the dynamic approach to IFR equilibrium. Nonlinear solutions to the beam envelope are constructed to explain oscillations in the beam envelope observed in the PIC simulations but not contained in the Vlasov equilibrium analysis. A test particle analysis is also developed as a method to visualize equilibrium solutions of the Vlasov equation. This not only provides further insight into the transport mechanism but also illustrates the connections between the three theories used to describe IFR transport. Separately these models provide valuable information about transverse beam confinement; together they provide a clear physical understanding of REB transport in the IFR

  10. Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam

    KAUST Repository

    Alaie, Seyedhamidreza

    2015-02-04

    Pt deposited by focused ion beam (FIB) is a common material used for attachment of nanosamples, repair of integrated circuits, and synthesis of nanostructures. Despite its common use little information is available on its thermal properties. In this work, Pt deposited by FIB is characterized thermally, structurally, and chemically. Its thermal conductivity is found to be substantially lower than the bulk value of Pt, 7.2 W m-1 K-1 versus 71.6 W m-1 K-1 at room temperature. The low thermal conductivity is attributed to the nanostructure of the material and its chemical composition. Pt deposited by FIB is shown, via aberration corrected TEM, to be a segregated mix of nanocrystalline Pt and amorphous C with Ga and O impurities. Ga impurities mainly reside in the Pt while O is homogeneously distributed throughout. The Ga impurity, small grain size of the Pt, and the amorphous carbon between grains are the cause for the low thermal conductivity of this material. Since Pt deposited by FIB is a common material for affixing samples, this information can be used to assess systematic errors in thermal characterization of different nanosamples. This application is also demonstrated by thermal characterization of two carbon nanofibers and a correction using the reported thermal properties of the Pt deposited by FIB.

  11. Vertical Growth of Superconducting Crystalline Hollow Nanowires by He+ Focused Ion Beam Induced Deposition.

    Science.gov (United States)

    Córdoba, Rosa; Ibarra, Alfonso; Mailly, Dominique; De Teresa, José Ma

    2018-02-14

    Novel physical properties appear when the size of a superconductor is reduced to the nanoscale, in the range of its superconducting coherence length (ξ 0 ). Such nanosuperconductors are being investigated for potential applications in nanoelectronics and quantum computing. The design of three-dimensional nanosuperconductors allows one to conceive novel schemes for such applications. Here, we report for the first time the use of a He + focused-ion-beam-microscope in combination with the W(CO) 6 precursor to grow three-dimensional superconducting hollow nanowires as small as 32 nm in diameter and with an aspect ratio (length/diameter) of as much as 200. Such extreme resolution is achieved by using a small He + beam spot of 1 nm for the growth of the nanowires. As shown by transmission electron microscopy, they display grains of large size fitting with face-centered cubic WC 1-x phase. The nanowires, which are grown vertically to the substrate, are felled on the substrate by means of a nanomanipulator for their electrical characterization. They become superconducting at 6.4 K and show large critical magnetic field and critical current density resulting from their quasi-one-dimensional superconducting character. These results pave the way for future nanoelectronic devices based on three-dimensional nanosuperconductors.

  12. Collection and focusing of laser accelerated ion beams for therapy applications

    Directory of Open Access Journals (Sweden)

    Ingo Hofmann

    2011-03-01

    Full Text Available Experimental results in laser acceleration of protons and ions and theoretical predictions that the currently achieved energies might be raised by factors 5–10 in the next few years have stimulated research exploring this new technology for oncology as a compact alternative to conventional synchrotron based accelerator technology. The emphasis of this paper is on collection and focusing of the laser produced particles by using simulation data from a specific laser acceleration model. We present a scaling law for the “chromatic emittance” of the collector—here assumed as a solenoid lens—and apply it to the particle energy and angular spectra of the simulation output. For a 10 Hz laser system we find that particle collection by a solenoid magnet well satisfies requirements of intensity and beam quality as needed for depth scanning irradiation. This includes a sufficiently large safety margin for intensity, whereas a scheme without collection—by using mere aperture collimation—hardly reaches the needed intensities.

  13. Design and implementation of a micron-sized electron column fabricated by focused ion beam milling

    Energy Technology Data Exchange (ETDEWEB)

    Wicki, Flavio, E-mail: flavio.wicki@physik.uzh.ch; Longchamp, Jean-Nicolas; Escher, Conrad; Fink, Hans-Werner

    2016-01-15

    We have designed, fabricated and tested a micron-sized electron column with an overall length of about 700 microns comprising two electron lenses; a micro-lens with a minimal bore of 1 micron followed by a second lens with a bore of up to 50 microns in diameter to shape a coherent low-energy electron wave front. The design criteria follow the notion of scaling down source size, lens-dimensions and kinetic electron energy for minimizing spherical aberrations to ensure a parallel coherent electron wave front. All lens apertures have been milled employing a focused ion beam and could thus be precisely aligned within a tolerance of about 300 nm from the optical axis. Experimentally, the final column shapes a quasi-planar wave front with a minimal full divergence angle of 4 mrad and electron energies as low as 100 eV. - Highlights: • Electron optics • Scaling laws • Low-energy electrons • Coherent electron beams • Micron-sized electron column.

  14. Customized atomic force microscopy probe by focused-ion-beam-assisted tip transfer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Andrew; Butte, Manish J., E-mail: manish.butte@stanford.edu [Department of Pediatrics, Division of Immunology, Allergy and Rheumatology, Stanford University, Stanford, California 94305 (United States)

    2014-08-04

    We present a technique for transferring separately fabricated tips onto tipless atomic force microscopy (AFM) cantilevers, performed using focused ion beam-assisted nanomanipulation. This method addresses the need in scanning probe microscopy for certain tip geometries that cannot be achieved by conventional lithography. For example, in probing complex layered materials or tall biological cells using AFM, a tall tip with a high-aspect-ratio is required to avoid artifacts caused by collisions of the tip's sides with the material being probed. We show experimentally that tall (18 μm) cantilever tips fabricated by this approach reduce squeeze-film damping, which fits predictions from hydrodynamic theory, and results in an increased quality factor (Q) of the fundamental flexural mode. We demonstrate that a customized tip's well-defined geometry, tall tip height, and aspect ratio enable improved measurement of elastic moduli by allowing access to low-laying portions of tall cells (T lymphocytes). This technique can be generally used to attach tips to any micromechanical device when conventional lithography of tips cannot be accomplished.

  15. Exploring Cryogenic Focused Ion Beam Milling as a Group III-V Device Fabrication Tool

    Science.gov (United States)

    2013-09-01

    boiling, triple , and critical points of the elements” in CRC Handbook of Chemistry and Physics, 92nd ed., Boca Raton, FL: CRC press, 2011-2012, p. 4...The most widely used ion source in FIB instruments is a gallium (Ga) liquid metal ion source (LMIS) [4]. Gallium is attractive as an ion source...Figure 3b. EDS spectra were captured at different points across the patterned region of the room temperature milled sample, as indicated in Figure 4

  16. Autoionization spectra of He excited by fast (MeV) H+, He+, and Li/sup n+/ (n = 1,2,3) ions

    International Nuclear Information System (INIS)

    Schneider, D.; Arcuni, P.; Bruch, P.; Stoeffler, W.

    1983-01-01

    Autoionization spectra of He following excitation by 1 to 3 MeV H + , He + , and Li/sup n+/ (n = 1,2,3) have been measured as a function of observation angle. The (2p 2 ) 1 D and (2s2p) 1 P resonances have been examined and a strong dependence on projectile velocities, charge state and observation angle was found

  17. Autoionization spectra of He excited by fast (MeV) H/sup +/, He/sup +/, and Li/sup n+/ (n = 1,2,3) ions

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, D.; Arcuni, P.; Bruch, P.; Stoeffler, W.

    1983-01-01

    Autoionization spectra of He following excitation by 1 to 3 MeV H/sup +/, He/sup +/, and Li/sup n+/ (n = 1,2,3) have been measured as a function of observation angle. The (2p/sup 2/)/sup 1/D and (2s2p)/sup 1/P resonances have been examined and a strong dependence on projectile velocities, charge state and observation angle was found.

  18. Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam milling

    International Nuclear Information System (INIS)

    Lei, Anders; Petersen, Dirch Hjorth; Booth, Timothy John; Homann, Lasse Vinther; Kallesoe, Christian; Sukas, Ozlem Sardan; Molhave, Kristian; Boggild, Peter; Gyrsting, Yvonne

    2010-01-01

    Nano- and microelectromechanical structures for in situ operation in a transmission electron microscope (TEM) were fabricated with a turnaround time of 20 min and a resolution better than 100 nm. The structures are defined by focused ion beam (FIB) milling in 135 nm thin membranes of single crystalline silicon extending over the edge of a pre-fabricated silicon microchip. Four-terminal resistance measurements of FIB-defined nanowires showed at least two orders of magnitude increase in resistivity compared to bulk. We show that the initial high resistance is due to amorphization of silicon, and that current annealing recrystallizes the structure, causing the electrical properties to partly recover to the pristine bulk resistivity. In situ imaging of the annealing process revealed both continuous and abrupt changes in the crystal structure, accompanied by instant changes of the electrical conductivity. The membrane structures provide a simple way to design electron-transparent nanodevices with high local temperature gradients within the field of view of the TEM, allowing detailed studies of surface diffusion processes. We show two examples of heat-induced coarsening of gold on a narrow freestanding bridge, where local temperature gradients are controlled via the electrical current paths. The separation of device processing into a one-time batch-level fabrication of identical, generic membrane templates, and subsequent device-specific customization by FIB milling, provides unparalleled freedom in device layout combined with very short effective fabrication time. This approach significantly speeds up prototyping of nanodevices such as resonators, actuators, sensors and scanning probes with state-of-art resolution.

  19. Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

    International Nuclear Information System (INIS)

    Altun, Ali Ozhan; Jeong, Jun-Ho; Rha, Jong-Joo; Kim, Ki-Don; Lee, Eung-Sug

    2007-01-01

    Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75 0 . The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin

  20. Very high-current propagation in the ion-focused to collision-dominated regime

    International Nuclear Information System (INIS)

    Sanford, T.W.L.; Welch, D.R.; Mock, R.C.

    1994-01-01

    Measurements and analysis show that the 13 TW, Hermes-III [J. J. Ramirez et al., Digest of Technical Papers, 6th IEEE Pulsed Power Conference (Institute of Electrical and Electronic Engineers, New York, 1987), p. 294], pulsed, electron beam has two windows of stable transport in long drift cells filled with N 2 gas terminated by a bremsstrahlung producing target: a low-pressure window (between ∼1 and ∼100 mTorr) that is dominated by propagation in the semicollisionless ion-focused regime (IFR), and a high-pressure window (between ∼1 and ∼100 Torr) that is dominated by propagation in the resistive collisional regime. In the transition region between the two windows, beam plasma--electron instabilities significantly disrupt propagation. Propagation in both regimes (the IFR at early time and the collisional at later time) is observed from ∼5 to ∼100 mTorr, which produces two distinct bremsstrahlung pulses from the single injected beam pulse. As the pressure increases, two-stream instabilities terminate IFR propagation and the associated bremsstrahlung pulse earlier and earlier in time. Above 5 mTorr, the instability is sufficiently quenched by gas collisions that propagation in the collisional regime back in the beam body occurs, leading to a second propagation and associated bremsstrahlung pulse. Above 200 mTorr, the gas breaks down too rapidly for a significant IFR pulse to form, and for higher pressures only a single pulse in the collisional regime is propagated. Reasonable stability in the collisional regime is not achieved until pressures exceed 1 Torr

  1. Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam milling

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Anders; Petersen, Dirch Hjorth; Booth, Timothy John; Homann, Lasse Vinther; Kallesoe, Christian; Sukas, Ozlem Sardan; Molhave, Kristian; Boggild, Peter [DTU Nanotech, Department of Nano- and Microtechnology, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Gyrsting, Yvonne, E-mail: Anders.Lei@nanotech.dtu.dk [DTU Danchip, National Center for Micro- and Nanofabrication, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark)

    2010-10-08

    Nano- and microelectromechanical structures for in situ operation in a transmission electron microscope (TEM) were fabricated with a turnaround time of 20 min and a resolution better than 100 nm. The structures are defined by focused ion beam (FIB) milling in 135 nm thin membranes of single crystalline silicon extending over the edge of a pre-fabricated silicon microchip. Four-terminal resistance measurements of FIB-defined nanowires showed at least two orders of magnitude increase in resistivity compared to bulk. We show that the initial high resistance is due to amorphization of silicon, and that current annealing recrystallizes the structure, causing the electrical properties to partly recover to the pristine bulk resistivity. In situ imaging of the annealing process revealed both continuous and abrupt changes in the crystal structure, accompanied by instant changes of the electrical conductivity. The membrane structures provide a simple way to design electron-transparent nanodevices with high local temperature gradients within the field of view of the TEM, allowing detailed studies of surface diffusion processes. We show two examples of heat-induced coarsening of gold on a narrow freestanding bridge, where local temperature gradients are controlled via the electrical current paths. The separation of device processing into a one-time batch-level fabrication of identical, generic membrane templates, and subsequent device-specific customization by FIB milling, provides unparalleled freedom in device layout combined with very short effective fabrication time. This approach significantly speeds up prototyping of nanodevices such as resonators, actuators, sensors and scanning probes with state-of-art resolution.

  2. High energy ions and energetic plasma irradiation effects on aluminum in a Filippov-type plasma focus

    Energy Technology Data Exchange (ETDEWEB)

    Roshan, M.V. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore)], E-mail: mroshan20@yahoo.com; Rawat, R.S. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Babazadeh, A.R.; Emami, M.; Sadat Kiai, S.M. [Plasma Physics Research Center, AEOI, 14155-1339 Tehran (Iran, Islamic Republic of); Verma, R.; Lin, J.J.; Talebitaher, A.R.; Lee, P.; Springham, S.V. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore)

    2008-12-30

    High energy ions and energetic plasma irradiation of aluminum cathode inserts have been accomplished in nitrogen and argon filled plasma focus device. The Filippov-type plasma focus facility, Dena, with 288 {mu}F capacitor bank and charging voltage of 25 kV (90 kJ maximum storage energy) was first optimized for strong ion beam generation for nitrogen and argon gases by maximizing hard X-ray emission efficiency. X-ray diffraction analysis as well as scanning electron microscopy along with energy dispersive X-ray spectroscopy carried out to study the structural, morphological and compositional profile of the treated samples. Change in preferred orientation, emergence of meta-stable phases, generation of copper micro-droplets, and production of cracks across the sample are demonstrated and discussed. The micro-hardness measurements in Vickers scale reveal that after ion irradiation, the surface hardness of samples is reduced.

  3. Experiments investigating the effects of the accelerating gap voltage pulse on the ion focused (IFR) high current electron recirculators

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.; Wagner, J.S.; Bennett, L.F.; Olson, W.R.; Turman, B.N.; Prestwich, K.R.; Wells, J.

    1991-01-01

    The lifetime of the Ion Focusing Regime (IFR) channel following the pulsing of the post-accelerating gaps is critical for an open-ended, spiral recirculating electron linear accelerator. It dictates the number of allowable beam recirculations through the gap. In the case of a racetrack configuration, it is significant but not as critical, since the presence of the electron beam focuses the ions and lengthens the lifetime of the ion channel. It was established that pulsing the accelerating gap perturbs the IFR channel. However, for the parameters studied, the lifetime is long enough to allow at least four beam recirculations in a spiral device. In addition, cusp fields positioned upstream and downstream from the gap prevent it from perturbing the IFR channel. 4 refs., 5 figs., 1 tab

  4. Experiments investigating the effects of the accelerating gap voltage pulse on the ion focused (IFR) high current electron recirculators

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Poukey, J.W.; Wagner, J.S.; Bennett, L.F.; Olson, W.R. Turnman, B.N.; Prestwich, K.R.; Wells, J.

    1991-01-01

    The lifetime of the Ion Focusing Regime (IFR) channel following the pulsing of the post-accelerating gaps is critical for an open-ended, spiral recirculating electron linear accelerator. It dictates the number of allowable beam recirculations through the gap. In the case of a racetrack configuration, its is significant but not as critical, since the presence of the electron beam focuses the ions and lengthens the lifetime of the ion channel. It was established that pulsing the accelerating gap perturbs the IFR channel. However, for the parameters studied, the lifetime is long enough to allow at least four beam recirculations in a spiral device. In addition, cusp fields positioned upstream and downstream from the gap prevent it from perturbing the IFR channel

  5. Drift Compression and Final Focus for Intense Heavy Ion Beams with Non-periodic, Time-dependent Lattice

    International Nuclear Information System (INIS)

    Hong Qin; Davidson, Ronald C.; Barnard, John J.; Lee, Edward P.

    2005-01-01

    In the currently envisioned configurations for heavy ion fusion, it is necessary to longitudinally compress the beam bunches by a large factor after the acceleration phase. Because the space-charge force increases as the beam is compressed, the beam size in the transverse direction will increase in a periodic quadrupole lattice. If an active control of the beam size is desired, a larger focusing force is needed to confine the beam in the transverse direction, and a non-periodic quadrupole lattice along the beam path is necessary. In this paper, we describe the design of such a focusing lattice using the transverse envelope equations. A drift compression and final focus lattice should focus the entire beam pulse onto the same focal spot on the target. This is difficult with a fixed lattice, because different slices of the beam may have different perveance and emittance. Four time-dependent magnets are introduced in the upstream of drift compression to focus the entire pulse onto the sam e focal spot. Drift compression and final focusing schemes are developed for a typical heavy ion fusion driver and for the Integrated Beam Experiment (IBX) being designed by the Heavy Ion Fusion Virtual National Laboratory

  6. Effects of focused ion beam milling on electron backscatter diffraction patterns in strontium titanate and stabilized zirconia

    DEFF Research Database (Denmark)

    Saowadee, Nath; Agersted, Karsten; Bowen, Jacob R.

    2012-01-01

    This study investigates the effect of focused ion beam (FIB) current and accelerating voltage on electron backscatter diffraction pattern quality of yttria‐stabilized zirconia (YSZ) and Nb‐doped strontium titanate (STN) to optimize data quality and acquisition time for 3D‐EBSD experiments by FIB...

  7. Extending the detection limit of dopants for focused ion beam prepared semiconductor specimens examined by off-axis electron holography

    DEFF Research Database (Denmark)

    Cooper, David; Rivallin, Pierrette; Hartmann, Jean-Michel

    2009-01-01

    Silicon specimens containing p-n junctions have been prepared for examination by off-axis electron holography using focused ion beam (FIB) milling. FIB milling modifies the surfaces of the specimens due to gallium implantation and the creation of defects which has the effect of reducing the active...

  8. Focused Ion Beam Nanotomography of ruthenium-bearing nickel-base superalloys with focus on cast-microstructure and phase stability; Focused Ion Beam Nanotomographie von rutheniumhaltigen Nickelbasis-Superlegierungen mit Fokus auf Gussgefuege und Phasenstabilitaet

    Energy Technology Data Exchange (ETDEWEB)

    Cenanovic, Samir

    2012-12-03

    The influence of rhenium and ruthenium on the multi component system nickel-base superalloy is manifold and complex. An experimental nickel-base superalloy containing rhenium and ruthenium within defined contents, named Astra, was used to investigate the influences of these two elements on the alloy system. The last stage solidification of nickel-base superalloys after Bridgman casting and the high temperature phase stability of these alloys, could be explored with the aid of focused ion beam nanotomography. FIB-nt therefore was introduced and realized at the chair of General Materials Properties of the University Erlangen-Nuremberg. Cast Astra alloys are like other nickel-base superalloys morphologically very inhomogeneous and affected by segregation. In the interdendritic region different structures with huge γ' precipitates are formed. These inhomogeneities and remaining eutectics degrade the mechanical properties, witch makes an understanding of the subsiding processes at solidification of residual melt important for the casting process and the heat treatment. This is why the last stage solidification in the interdendritic region was analyzed. With the help of focused ion beam nanotomography, three different structures identified from 2-D sections could be assigned to one original 3-D structure. It was pointed out, that only the orientation of the plane of the 2-D cut influences the appearance in the 2-D section. The tomography information was used to explain the development during solidification and to create a model of last stage solidification. The interdendritic region is solidifying under the development of eutectic islands. The structure nucleates eutectically epitaxially at primary dendrite arms, with formation of fine γ/γ' precipitates. During solidification the γ' precipitates coarsen in a rod-like structure, and end up in large γ' precipitates. Simulations and other investigations could approve this model. First three

  9. MeV He microbeam analysis of a semiconductor integrated circuit

    International Nuclear Information System (INIS)

    Zhu Peiran; Liu Jiarui; Zhang Jinping; Yin Shiduan

    1989-01-01

    An MeV He + microbeam has been used to analyse a microscale semiconductor structure. The 2 MeV He + ion beam is limited to 25 μm diameter by a set of diaphragms and is further focused by a quadrupole quadruplet to 3μm diameter. The incident beam current on the sample is about 0.3 nA. The Rutherford backscattering (RBS) technique is applied to the measurement of the composition and depth profile in the near-surface region of a semiconductor integrated circuit. (author)

  10. MeV He microbeam analysis of a semiconductor integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Peiran; Liu Jiarui; Zhang Jinping; Yin Shiduan

    1989-01-01

    An MeV He/sup +/ microbeam has been used to analyse a microscale semiconductor structure. The 2 MeV He/sup +/ ion beam is limited to 25 /mu/m diameter by a set of diaphragms and is further focused by a quadrupole quadruplet to 3/mu/m diameter. The incident beam current on the sample is about 0.3 nA. The Rutherford backscattering (RBS) technique is applied to the measurement of the composition and depth profile in the near-surface region of a semiconductor integrated circuit.

  11. K-shell x-ray production cross sections of selected elements Al to Ni for 4. 0 to 38. 0 MeV /sup 10/B ions. [Cross sections, 4. 0 to 38 MeV, binding energy, electron capture decay, PWBA, energy shifts, multiple ionization

    Energy Technology Data Exchange (ETDEWEB)

    Monigold, G.; McDaniel, F.D.; Duggan, J.L.; Mehta, R.; Rice, R.; Miller, P.D.

    1976-01-01

    K-Shell x-ray production cross sections for the target elements Sc, Ti, V, Mn, Fe, Co, and Ni were measured for incident /sup 10/B ions over the energy range 4.0 to 38.0 MeV. The cross section data were compared to the theoretical predictions of the binary encounter approximation (BEA); the plane wave born approximation (PWBA); and the PWBA modified to include corrections for increased binding energy (B), Coulomb deflection of the incident ion (C), orbital perturbation due to polarization (P), and relativistic effects (R). In addition, fluorescence yield variations (W/sub K/) and contributions to the cross sections from electron capture (EC) were included. It was found that the predictions of the fully modified PWBA with contributions from electron capture and fluorescence yield variations included provided the best fit to the experimental data over the entire energy range for each target element. The K..beta../K..cap alpha.. x-ray intensity ratios were compared to theoretical values that assume single hole ionization, and the x-ray energy shifts presented as a function of the energy of the incident ion. These two measurements provided confirmation of the occurrence of multiple ionization for /sup 10/B bombardment of target elements in the range 21 less than or equal to Z/sub 2/ less than or equal to 28.

  12. Tuning of optical and electrical properties of wide band gap Fe:SnO{sub 2}/Li:NiO p-n junctions using 80 MeV oxygen ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, Bhaumik V.; Joshi, U.S. [Gujarat University, Department of Physics, School of Sciences, Ahmedabad (India); Avasthi, D.K. [Inter University Accelerator Centre, New Delhi (India)

    2016-12-15

    Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p-n junction diode have been investigated for advanced electronics application. Fe:SnO{sub 2}/Li:NiO p-n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO{sub 2} and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p-n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p-n junction diode was irradiated to 80 MeV O{sup +6} ions with 1 x 10{sup 12} ions/cm{sup 2} fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p-n junction diode, O{sup +6} ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p-n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p-n junction diode. (orig.)

  13. Effect of 120 MeV 28Si9+ ion irradiation on structural and magnetic properties of NiFe2O4 and Ni0.5Zn0.5Fe2O4

    Science.gov (United States)

    Sharma, R.; Raghuvanshi, S.; Satalkar, M.; Kane, S. N.; Tatarchuk, T. R.; Mazaleyrat, F.

    2018-05-01

    NiFe2O4, Ni0.5Zn0.5Fe2O4 samples were synthesized using sol-gel auto combustion method, and irradiated by using 120 MeV 28Si9+ ion with ion fluence of 1×1012 ions/cm2. Characterization of pristine, irradiated samples were done using X-Ray Diffraction (XRD), Field Emission Scanning Microscopy (FE-SEM), Energy Dispersive X-ray Analysis (EDAX) and Vibrating Sample Magnetometer (VSM). XRD validates the single phase nature of pristine, irradiated Ni- Zn nano ferrite except for Ni ferrite (pristine, irradiated) where secondary phases of α-Fe2O3 and Ni is observed. FE- SEM images of pristine Ni, Ni-Zn ferrite show inhomogeneous nano-range particle size distribution. Presence of diamagnetic ion (Zn2+) in NiFe2O4 increases oxygen positional parameter (u 4¯3m ), experimental, theoretical saturation magnetization (Msexp., Msth.), while decreases the grain size (Ds) and coercivity (Hc). With irradiation Msexp., Msth. increases but not much change are observed in Hc. New antistructure modeling for the pristine, irradiated Ni and Ni-Zn ferrite samples was used for describing the surface active centers.

  14. Transport of long-pulse relativistic electron beams in preformed plasma channels in the ion focus regime

    International Nuclear Information System (INIS)

    Miller, J.D.

    1989-01-01

    Experiments have been performed demonstrating efficient transport of long-pulse (380 ns), high-current (200 A), relativistic electron beams (REBs) in preformed plasma channels in the ion focus regime (IFR). Plasma channels were created by low-energy ( e , and channel ion mass, in agreement with theoretical values predicted for the ion hose instability. Microwave emission has also been observed indicative of REB-plasma electron two-stream instability. Plasma channel density measurements indicate that the two-stream instability can become dominant for measured f e values slightly above unity. The author has introduced a theoretical analysis for high-current REB transport and modulation in axially periodic IFR plasma channels. Analytic expression for the electric field are found for the case of a cosine modulation of the channel ion density. Two different types of channels are considered: (i) periodic beam-induced ionization channels, and (ii) periodic plasma slab channels created by an external source. Analytical conditions are derived for the matched radius of the electron beam and for approximate beam envelope motion using a 'smooth' approximation. Numerical solutions to the envelope equation show that by changing the wavelength or the amplitude of the space-charge neutralization fraction of the ion channel density modulation, the beam can be made to focus and diverge, or to undergo stable, modulated transport

  15. Focused Ion Beam and Advanced Electron Microscopy for Minerals: Insights and Outlook from Bismuth Sulphosalts

    Directory of Open Access Journals (Sweden)

    Cristiana L. Ciobanu

    2016-10-01

    Full Text Available This paper comprises a review of the rapidly expanding application of nanoscale mineral characterization methodology to the study of ore deposits. Utilising bismuth sulphosalt minerals from a reaction front in a skarn assemblage as an example, we illustrate how a complex problem in ore petrology, can be approached at scales down to that of single atoms. We demonstrate the interpretive opportunities that can be realised by doing this for other minerals within their petrogenetic contexts. From an area defined as Au-rich within a sulphosalt-sulphide assemblage, and using samples prepared on a Focused Ion Beam–Scanning Electron Microscopy (SEM platform, we identify mineral species and trace the evolution of their intergrowths down to the atomic scale. Our approach progresses from a petrographic and trace element study of a larger polished block, to high-resolution Transmission Electron Microscopy (TEM and High Angle Annular Dark Field (HAADF Scanning-TEM (STEM studies. Lattice-scale heterogeneity imaged in HAADF STEM mode is expressed by changes in composition of unit cell slabs followed by nanoparticle formation and their growth into “veins”. We report a progressive transition from sulphosalt species which host lattice-bound Au (neyite, lillianite homologues; Pb-Bi-sulphosalts, to those that cannot accept Au (aikinite. This transition acts as a crystal structural barrier for Au. Fine particles of native gold track this progression over the scale of several hundred microns, leading to Au enrichment at the reaction front defined by an increase in the Cu gradient (several wt %, and abrupt changes in sulphosalt speciation from Pb-Bi-sulphosalts to aikinite. Atom-scale resolution imaging in HAADF STEM mode allows for the direct visualisation of the three component slabs in the neyite crystal structure, one of the largest and complex sulphosalts of boxwork-type. We show for the first time the presence of aikinite nanoparticles a few nanometres in

  16. Light output response of EJ-309 liquid organic scintillator to 2.86-3.95 MeV carbon recoil ions due to neutron elastic and inelastic scatter

    Science.gov (United States)

    Norsworthy, Mark A.; Ruch, Marc L.; Hamel, Michael C.; Clarke, Shaun D.; Hausladen, Paul A.; Pozzi, Sara A.

    2018-03-01

    We present the first measurements of energy-dependent light output from carbon recoils in the liquid organic scintillator EJ-309. For this measurement, neutrons were produced by an associated particle deuterium-tritium generator and scattered by a volume of EJ-309 scintillator into stop detectors positioned at four fixed angles. Carbon recoils in the scintillator were isolated using triple coincidence among the associated particle detector, scatter detector, and stop detectors. The kinematics of elastic and inelastic scatter allowed data collection at eight specific carbon recoil energies between 2.86 and 3.95 MeV. We found the light output caused by carbon recoils in this energy range to be approximately 1.14% of that caused by electrons of the same energy, which is comparable to the values reported for other liquid organic scintillators. A comparison of the number of scattered neutrons at each angle to a Monte Carlo N-Particle eXtended simulation indicates that the ENDF/B-VII.1 evaluation of differential cross sections for 14.1 MeV neutrons on carbon has discrepancies with the experiment as large as 55%, whereas those reported in the JENDL-4.0u evaluation agree with experiment.

  17. Neutron and proton transmutation-activation cross section libraries to 150 MeV for application in accelerator-driven systems and radioactive ion beam target-design studies

    International Nuclear Information System (INIS)

    Koning, A.J.; Chadwick, M.B.; MacFarlane, R.E.; Mashnik, S.; Wilson, W.B.

    1998-05-01

    New transmutation-activation nuclear data libraries for neutrons and protons up to 150 MeV have been created. These data are important for simulation calculations of radioactivity, and transmutation, in accelerator-driven systems such as the production of tritium (APT) and the transmutation of waste (ATW). They can also be used to obtain cross section predictions for the production of proton-rich isotopes in (p,xn) reactions, for radioactive ion beam (RIB) target-design studies. The nuclear data in these libraries stem from two sources: for neutrons below 20 MeV, we use data from the European activation and transmutation file, EAF97; For neutrons above 20 MeV and for protons at all energies we have isotope production cross sections with the nuclear model code HMS-ALICE. This code applies the Monte Carlo Hybrid Simulation theory, and the Weisskopf-Ewing theory, to calculate cross sections. In a few cases, the HMS-ALICE results were replaced by those calculated using the GNASH code for the Los Alamos LA150 transport library. The resulting two libraries, AF150.N and AF150.P, consist of 766 nuclides each and are represented in the ENDF6-format. An outline is given of the new representation of the data. The libraries have been checked with ENDF6 preprocessing tools and have been processed with NJOY into libraries for the Los Alamos transmutation/radioactivity code CINDER. Numerous benchmark figures are presented for proton-induced excitation functions of various isotopes compared with measurements. Such comparisons are useful for validation purposes, and for assessing the accuracy of the evaluated data. These evaluated libraries are available on the WWW at: http://t2.lanl.gov/. 21 refs

  18. MeV and GeV prospects for producing a large ion layer configuration for fusion power generation and breeding

    International Nuclear Information System (INIS)

    McNally, J.R. Jr.

    1983-01-01

    Injection of multi-MeV molecular hydrogen ions into a magnetic mirror or magnetic mirror well can lead to the production of an ion (or proton-E) Layer with prospects for fusion power generation. This involves: (1) slow (exponential or Lorentz) trapping of protons from dissociation and/or ionization of H 2 + ions; (2) electron cyclotron drive of the electronic temperature to reduce the electron stopping power; (3) production of an Ion-Layer, E-Core plasma configuration having prospects for cold fuel feed with in situ axial acceleration of say D 2 + ions into the negative E-Core; (4) ignited advanced fuel burns in the resulting high beta plasma with excess (free) neutrons available for energy multiplication of fissile fuel breeding; (5) development of a nuclear dynamo with fuel feed, plasma energy, and Ion-Layer current maintenance by fusion products; and (6) a natural divertor end loss of ashes with charge separation permitting a natural direct electrical conversion prospect

  19. Sub-micrometer-scale patterning on Zr-based metallic glass using focused ion beam irradiation and chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Morita, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Yamada, Shigeru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Takano, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Ashida, Kiwamu [Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kochi 782-8502 (Japan); Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Ofune, Hitoshi [YKK Corporation, 200 Yoshida, Kurobe, Toyama 938-8601 (Japan)

    2007-09-19

    This report describes a method of sub-micrometer-scale rapid patterning on a Zr-based metallic glass surface using a combination of focused ion beam irradiation and wet chemical etching. We found that a Zr-based metallic glass surface irradiated with Ga{sup +} ions could be selectively etched; a concave structure with a width and depth of several tens to hundreds of nanometers rapidly formed in the irradiated area. Moreover, we determined that the etching was enhanced by the presence of Ga{sup +} ions rather than a change in the crystal structure, and the structure could be fabricated while the substrate remained amorphous. The shape of the structure was principally a function of the dose and the etch time.

  20. A Comprehensive Approach Towards Optimizing the Xenon Plasma Focused Ion Beam Instrument for Semiconductor Failure Analysis Applications.

    Science.gov (United States)

    Subramaniam, Srinivas; Huening, Jennifer; Richards, John; Johnson, Kevin

    2017-08-01

    The xenon plasma focused ion beam instrument (PFIB), holds significant promise in expanding the applications of focused ion beams in new technology thrust areas. In this paper, we have explored the operational characteristics of a Tescan FERA3 XMH PFIB instrument with the aim of meeting current and future challenges in the semiconductor industry. A two part approach, with the first part aimed at optimizing the ion column and the second optimizing specimen preparation, has been undertaken. Detailed studies characterizing the ion column, optimizing for high-current/high mill rate activities, have been described to support a better understanding of the PFIB. In addition, a novel single-crystal sacrificial mask method has been developed and implemented for use in the PFIB. Using this combined approach, we have achieved high-quality images with minimal artifacts, while retaining the shorter throughput times of the PFIB. Although the work presented in this paper has been performed on a specific instrument, the authors hope that these studies will provide general insight to direct further improvement of PFIB design and applications.

  1. K-shell x-ray production cross sections of selected elements Al to Ni for 4.0 to 38.0 MeV 10B ions

    International Nuclear Information System (INIS)

    Monigold, G.; McDaniel, F.D.; Duggan, J.L.; Mehta, R.; Rice, R.; Miller, P.D.

    1976-01-01

    K-Shell x-ray production cross sections for the target elements Sc, Ti, V, Mn, Fe, Co, and Ni were measured for incident 10 B ions over the energy range 4.0 to 38.0 MeV. The cross section data were compared to the theoretical predictions of the binary encounter approximation (BEA); the plane wave born approximation (PWBA); and the PWBA modified to include corrections for increased binding energy (B), Coulomb deflection of the incident ion (C), orbital perturbation due to polarization (P), and relativistic effects (R). In addition, fluorescence yield variations (W/sub K/) and contributions to the cross sections from electron capture (EC) were included. It was found that the predictions of the fully modified PWBA with contributions from electron capture and fluorescence yield variations included provided the best fit to the experimental data over the entire energy range for each target element. The Kβ/Kα x-ray intensity ratios were compared to theoretical values that assume single hole ionization, and the x-ray energy shifts presented as a function of the energy of the incident ion. These two measurements provided confirmation of the occurrence of multiple ionization for 10 B bombardment of target elements in the range 21 less than or equal to Z 2 less than or equal to 28

  2. Self-magnetically-insulated 'plasma-focus diode' as a new source of an intence pulsed light-ion beam

    International Nuclear Information System (INIS)

    Takahashi, Akira; Aga, Keigo; Masugata, Katsumi; Ito, Michiaki; Yatsui, Kiyoshi

    1986-01-01

    A new and simple type of self-magnetically-insulated diode named ''Plasma-Focus Diode'' has been successfully developed, where anode and cathode are constituted by a pair of coaxial cylindrical electrodes similarly to a Mather-type plasma-focus device. Operating conditions are typically as follows: inductively-calibrated diode voltage ∼ 660 kV, diode current ∼ 142 kA, total ion current ∼ 32 kA, pulse width ∼ 90 ns and diode efficiency ∼ 22 %. Multiple-shots operation more than 50 shots has been possible without changing flashboard. Local divergence angle has been observed to be 0.9 deg ∼ 1.6 deg. Using such a simple ion diode, we have demonstrated a possibility of high concentration of beam-power density onto a target placed at the center. (author)

  3. Investigation of Generation, Acceleration, Transport and Final Focusing of High-Intensity Heavy Ion Beams from Sources to Targets

    Energy Technology Data Exchange (ETDEWEB)

    Chiping Chen

    2006-10-26

    Under the auspices of the research grant, the Intense Beam Theoretical Research Goup at Massachusetts Institute of Technology's Plasma Science and Fusion Center made significant contributions in a number of important areas in the HIF and HEDP research, including: (a) Derivation of rms envelope equations and study of rms envelope dynamics for high-intensity heavy ion beams in a small-aperture AG focusing transport systems; (b) Identification of a new mechanism for chaotic particle motion, halo formation, and beam loss in high-intensity heavy ion beams in a small-aperture AG focusing systems; Development of elliptic beam theory; (d) Study of Physics Issues in the Neutralization Transport Experiment (NTX).

  4. Investigation of Generation, Acceleration, Transport and Final Focusing of High-Intensity Heavy Ion Beams from Sources to Targets

    International Nuclear Information System (INIS)

    Chiping Chen

    2006-01-01

    Under the auspices of the research grant, the Intense Beam Theoretical Research Group at Massachusetts Institute of Technology's Plasma Science and Fusion Center made significant contributions in a number of important areas in the HIF and HEDP research, including: (a) Derivation of rms envelope equations and study of rms envelope dynamics for high-intensity heavy ion beams in a small-aperture AG focusing transport systems; (b) Identification of a new mechanism for chaotic particle motion, halo formation, and beam loss in high-intensity heavy ion beams in a small-aperture AG focusing systems; (c) Development of elliptic beam theory; and (d) Study of Physics Issues in the Neutralization Transport Experiment (NTX)

  5. effect of the plasma ion channel on self-focusing of a Gaussian laser pulse in underdense plasma

    Directory of Open Access Journals (Sweden)

    Sh Irani

    2013-09-01

    Full Text Available  We have considered the self-focusing of a Gaussian laser pulse in unmagnetized plasma. High-intensity electromagnetic fields cause the variation of electron density in plasma. These changes in the special conditions cause the acceleration of electrons to the higher energy and velocities. Thus the equation of plasma density evolution was obtained considering the electrons ponderomotive force. Then, an equation for the width of laser pulse with a relativistic mass correction term and the effect of ion channel were derived and the propagation of high-intensity laser pulse in an underdense plasma with weak relativistic approximation was investigated. It is shown that the ratio of ion channel radius to spot size could result in different forms of self focusing for the laser pulse in plasma.

  6. Three-dimensional characterization of pigment dispersion in dried paint films using focused ion beam-scanning electron microscopy.

    Science.gov (United States)

    Lin, Jui-Ching; Heeschen, William; Reffner, John; Hook, John

    2012-04-01

    The combination of integrated focused ion beam-scanning electron microscope (FIB-SEM) serial sectioning and imaging techniques with image analysis provided quantitative characterization of three-dimensional (3D) pigment dispersion in dried paint films. The focused ion beam in a FIB-SEM dual beam system enables great control in slicing paints, and the sectioning process can be synchronized with SEM imaging providing high quality serial cross-section images for 3D reconstruction. Application of Euclidean distance map and ultimate eroded points image analysis methods can provide quantitative characterization of 3D particle distribution. It is concluded that 3D measurement of binder distribution in paints is effective to characterize the order of pigment dispersion in dried paint films.

  7. Free flow zone electrophoresis and isoelectric focusing using a microfabricated glass device with ion permeable membranes

    NARCIS (Netherlands)

    Kohlheyer, D.; Besselink, G.A.J.; Schlautmann, Stefan; Schasfoort, Richardus B.M.

    2006-01-01

    This paper describes a microfabricated free-flow electrophoresis device with integrated ion permeable membranes. In order to obtain continuous lanes of separated components an electrical field is applied perpendicular to the sample flow direction. This sample stream is sandwiched between two sheath

  8. Effect of gas filling pressure and operation energy on ion and neutron emission in a medium energy plasma focus device

    Science.gov (United States)

    Niranjan, Ram; Rout, R. K.; Srivastava, Rohit; Kaushik, T. C.

    2018-03-01

    The effects of gas filling pressure and operation energy on deuterium ions and neutrons have been studied in a medium energy plasma focus device, MEPF-12. The deuterium gas filling pressure was varied from 1 to 10 mbar at an operation energy of 9.7 kJ. Also, the operation energy was varied from 3.9 to 9.7 kJ at a deuterium gas filling pressure of 4 mbar. Time resolved emission of deuterium ions was measured using a Faraday cup. Simultaneously, time integrated and time resolved emissions of neutrons were measured using a silver activation detector and plastic scintillator detector, respectively. Various characteristics (fluence, peak density, and most probable energy) of deuterium ions were estimated using the Faraday cup signal. The fluence was found to be nearly independent of the gas filling pressure and operation energy, but the peak density and most probable energy of deuterium ions were found to be varying. The neutron yield was observed to be varying with the gas filling pressure and operation energy. The effect of ions on neutrons emission was observed at each operation condition.

  9. Development of Functional Surfaces on High-Density Polyethylene (HDPE) via Gas-Assisted Etching (GAE) Using Focused Ion Beams.

    Science.gov (United States)

    Sezen, Meltem; Bakan, Feray

    2015-12-01

    Irradiation damage, caused by the use of beams in electron and ion microscopes, leads to undesired physical/chemical material property changes or uncontrollable modification of structures. Particularly, soft matter such as polymers or biological materials is highly susceptible and very much prone to react on electron/ion beam irradiation. Nevertheless, it is possible to turn degradation-dependent physical/chemical changes from negative to positive use when materials are intentionally exposed to beams. Especially, controllable surface modification allows tuning of surface properties for targeted purposes and thus provides the use of ultimate materials and their systems at the micro/nanoscale for creating functional surfaces. In this work, XeF2 and I2 gases were used in the focused ion beam scanning electron microscope instrument in combination with gallium ion etching of high-density polyethylene surfaces with different beam currents and accordingly different gas exposure times resulting at the same ion dose to optimize and develop new polymer surface properties and to create functional polymer surfaces. Alterations in the surface morphologies and surface chemistry due to gas-assisted etching-based nanostructuring with various processing parameters were tracked using high-resolution SEM imaging, complementary energy-dispersive spectroscopic analyses, and atomic force microscopic investigations.

  10. Efficient focusing of 8 keV X-rays with multilayer Fresnel zone plates fabricated by atomic layer deposition and focused ion beam milling

    International Nuclear Information System (INIS)

    Mayer, Marcel; Keskinbora, Kahraman; Grévent, Corinne; Szeghalmi, Adriana; Knez, Mato; Weigand, Markus; Snigirev, Anatoly; Snigireva, Irina; Schütz, Gisela

    2013-01-01

    The fabrication and performance of multilayer Al 2 O 3 /Ta 2 O 5 Fresnel zone plates in the hard X-ray range and a discussion of possible future developments considering available materials are reported. Fresnel zone plates (FZPs) recently showed significant improvement by focusing soft X-rays down to ∼10 nm. In contrast to soft X-rays, generally a very high aspect ratio FZP is needed for efficient focusing of hard X-rays. Therefore, FZPs had limited success in the hard X-ray range owing to difficulties of manufacturing high-aspect-ratio zone plates using conventional techniques. Here, employing a method of fabrication based on atomic layer deposition (ALD) and focused ion beam (FIB) milling, FZPs with very high aspect ratios were prepared. Such multilayer FZPs with outermost zone widths of 10 and 35 nm and aspect ratios of up to 243 were tested for their focusing properties at 8 keV and shown to focus hard X-rays efficiently. This success was enabled by the outstanding layer quality thanks to ALD. Via the use of FIB for slicing the multilayer structures, desired aspect ratios could be obtained by precisely controlling the thickness. Experimental diffraction efficiencies of multilayer FZPs fabricated via this combination reached up to 15.58% at 8 keV. In addition, scanning transmission X-ray microscopy experiments at 1.5 keV were carried out using one of the multilayer FZPs and resolved a 60 nm feature size. Finally, the prospective of different material combinations with various outermost zone widths at 8 and 17 keV is discussed in the light of the coupled wave theory and the thin-grating approximation. Al 2 O 3 /Ir is outlined as a promising future material candidate for extremely high resolution with a theoretical efficiency of more than 20% for as small an outermost zone width as 10 nm at 17 keV

  11. Measurements of the Energy Deposition Profile for 238U Ions with Energy 500 and 950 MEV/U in Stainless Steel and Copper Targets

    CERN Document Server

    Mustafin, Edil; Gnutov, A; Golubev, Alexander; Hofmann, Ingo; Kantsyrev, Alexei; Kunin, Andrey; Latysheva, Ludmila N; Luckjashin, Victor; Panova, Yulia; Schardt, Dieter; Sobolevskiy, Nikolai; Vatulin, Vladimir; Weyrich, Karin

    2005-01-01

    Sub-millimeter wall thickness is foreseen for the vacuum tubes in the magnets of the superconducting dipoles of the SIS100 and SIS300 of the FAIR Project. The Bragg peak of the energy deposition by the U ions in these walls may lie dangerously close to the superconducting cables. Thus the precise knowledge of the dE/dx profile is essential for estimating the heat load by the lost ions in the vicinity of the superconducting wires. Here we present the results of the measurement of the U ion beam energy deposition profile in Cu and stainless steel targets and compare the measured data with the Monte-Carlo simulation using the SHIELD code.

  12. Stress evaluation in thin films: Micro-focus synchrotron X-ray diffraction combined with focused ion beam patterning for d{sub o} evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Baimpas, Nikolaos, E-mail: nikolaos.baimpas@eng.ox.ac.uk [University of Oxford, Dept. of Engineering Science (United Kingdom); Le Bourhis, Eric [University of Poitiers, Institut P' , Laboratoire de Physique des Matériaux, Poitiers (France); Eve, Sophie [ENSICAEN, CRISMAT, Caen (France); Thiaudière, Dominique [Synchrotron SOLEIL, L' Orme des Merisiers Saint-Aubin, Paris (France); Hardie, Christopher [University of Oxford, Materials Department (United Kingdom); Korsunsky, Alexander M. [University of Oxford, Dept. of Engineering Science (United Kingdom)

    2013-12-31

    Nanocrystalline metallic coatings of sub-micron thickness are widely used in modern microelectronic applications. In X-ray diffraction experiments to determine both the residual and applied stresses in nanocrystalline coatings, one difficult challenge that comes up invariably is the determination of the strain-free lattice spacing d{sub o}. The present study addresses this challenge by using the focused ion beam (FIB) to generate a built-in strain-free reference by patterning (milling) a 50 × 50 μm{sup 2} region of the coating to produce an array of small stress-relieved “islands” ∼ 0.8 × 0.8 μm{sup 2} each. Transmission X-ray diffraction setup was used for data collection at DIFFABS beamline (Synchrotron SOLEIL, France). A 150 nm-thick multi-layered W–Cu nano-composite thin film on polyimide (Kapton®) substrate was studied. The samples were loaded incrementally using a compact uniaxial loading device, and micro-beam diffraction data were collected on and away from the reference array. It was shown experimentally that the “island” array remained approximately strain free throughout the experiment, providing an on-board d{sub o} lattice spacing reference. The changing lattice spacing d in the coating was also monitored away from the array, to deduce the elastic strain evolution during deformation. The results and their implications are presented and discussed. - Highlights: • In situ deformation study of laminate polycrystalline W–Cu thin films • Focused ion beam (FIB) patterning of an array of “islands” on thin films surface • X-ray diffraction on island-patterned region • Constant strain on “islands” independently of the deformation of the substrate.

  13. Study and use of the ion beams formed in the Focus experiment

    International Nuclear Information System (INIS)

    Bernard, A.; Garconnet, J.P.; Jolas, A.; le Breton, J.P.; de Mascureau, J.

    1983-03-01

    Studies were performed in the 200 kJ Actime installation using CD 2 or LiD targets and permitted one to determine the characteristics of the ion beam which bombards the target. The measurement of the temperature attained by metal targets bombarded by deuterons is discussed. The use of a digital program permits one to calculate the amount of energy deposited. Finally, the improvements being considered and the future prospects offered by this type of experiment are discussed

  14. Focused Ion Beam Methods for Research and Control of HEMT Fabrication

    Science.gov (United States)

    Pevtsov, E. Ph; Bespalov, A. V.; Demenkova, T. A.; Luchnikov, P. A.

    2017-04-01

    The combination of ion-beam spraying and raster electronic microscopy allows to receive images of sections of defects of the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, to carry out their analysis and classification irrespective of conditions of receiving. Results of application of the specified methods for the analysis of technological operations when forming the microwave transistors are considered: formations of locks, receiving of holes and drawing of contacts.

  15. Degradation of PET, PEEK and PI induced by irradiation with 150 keV Ar+ and 1.76 MeV He+ ions

    Czech Academy of Sciences Publication Activity Database

    Macková, Anna; Havránek, Vladimír; Švorčík, V.; Suzuki, T.; Djourelov, N.

    2005-01-01

    Roč. 240, 1/2 (2005), s. 245-249 ISSN 0168-583X R&D Projects: GA MŠk(CZ) OC 527.100 Institutional research plan: CEZ:AV0Z10480505 Keywords : irradiated polymers * ion beam modification * ERDA Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.181, year: 2005

  16. Modeling of fuel retention in the pre-damaged tungsten with MeV W ions after exposure to D plasma

    Directory of Open Access Journals (Sweden)

    Zhenhou Wang

    2017-12-01

    Full Text Available Modeling of high-Z ion irradiated-induced damages on fuel retention inside tungsten (W material has been performed in this work. The upgraded Hydrogen Isotope Inventory Processes Code (HIIPC is applied to model the deuterium (D retention inside pre-damaged W during exposed to low-energy D flux, and the W is pre-irradiated by 20 MeV W-ion before exposed to D flux. Three types of trap, i.e. mono-vacancies, dislocations and grain boundary vacancies, are considered in the present model. The mono-vacancy defects induced by energetic W ions are calculated by SRIM code. First, the model is validated against the available experimental data under the same D flux exposure conditions, showing the reasonable agreement. Then, the effect of radiation-induced defects produced by pre-exposed energetic W-ion with different energy and fluence on the fuel retention are studied, confirming that the irradiation-induced traps play a dominated role on the fuel retention in the surface of the material (∼ micrometer. Finally, the effects of different type of defect, D fluence, and wall temperature on the fuel retention are discussed systemically, and these modeling results are in well agreement with the previous studies.

  17. Light particle probes of expansion and temperature evolution: Coalescence model analyses of heavy ion collisions at 47A MeV

    International Nuclear Information System (INIS)

    Hagel, K.; Wada, R.; Cibor, J.; Lunardon, M.; Marie, N.; Alfaro, R.; Shen, W.; Xiao, B.; Zhao, Y.; Majka, Z.

    2000-01-01

    The reactions 12 C+ 116 Sn, 22 Ne+Ag, 40 Ar+ 100 Mo, and 64 Zn+ 89 Y have been studied at 47A MeV projectile energy. For these reactions the most violent collisions lead to increasing amounts of fragment and light particle emission as the projectile mass increases. This is consistent with quantum molecular dynamics (QMD) model simulations of the collisions. Moving source fits to the light charged particle data have been used to gain a global view of the evolution of the particle emission. Comparisons of the multiplicities and spectra of light charged particles emitted in the reactions with the four different projectiles indicate a common emission mechanism for early emitted ejectiles even though the deposited excitation energies differ greatly. The spectra for such ejectiles can be characterized as emission in the nucleon-nucleon frame. Evidence that the 3 He yield is dominated by this type of emission and the role of the collision dynamics in determining the 3 H/ 3 He yield ratio are discussed. Self-consistent coalescence model analyses are applied to the light cluster yields, in an attempt to probe emitter source sizes and to follow the evolution of the temperatures and densities from the time of first particle emission to equilibration. These analyses exploit correlations between ejectile energy and emission time, suggested by the QMD calculations. In this analysis the degree of expansion of the emitting system is found to increase with increasing projectile mass. The double isotope yield ratio temperature drops as the system expands. Average densities as low as 0.36ρ 0 are reached at a time near 100 fm/c after contact. Calorimetric methods were used to derive the mass and excitation energy of the excited nuclei which are present after preequilibrium emission. The derived masses range from 102 to 116 u and the derived excitation energies increase from 2.6 to 6.9 MeV/nucleon with increasing projectile mass. A caloric curve is derived for these expanded A∼110

  18. Structural, surface potential and optical studies of AlGaN based double heterostructures irradiated by 120 MeV Si{sup 9+} swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Arivazhagan, P., E-mail: arivazhaganau2008@gmail.com [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Ramesh, R.; Balaji, M. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India); Asokan, K. [Inter-University Accelerator Centre (IUAC), New Delhi (India); Baskar, K. [Crystal Growth Centre, Anna University, Chennai, 600 025 (India)

    2016-09-15

    The Al{sub 0.33}Ga{sub 0.77}N/Al{sub 0.14}Ga{sub 0.86}N based double heterostructure was irradiated using Si{sup 9+} ion at room temperature (RT) and liquid nitrogen temperature (LNT) with four dissimilar ion fluence. The effect of Si{sup 9+} ion irradiation in dislocation densities and in-plane strain of GaN layer were discussed. The in-plane strain values of Al{sub x}Ga{sub 1-x}N layers were calculated from asymmetric reciprocal space mapping (RSM). The surface modification and the variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces due to the irradiation were measured by Electrostatic Force Microscopy (EFM). The capacitance of the tip-sample system was determined from EFM. The band edge emissions of heterostructures were measured by the room temperature phototluminescence (PL) and the shift in the Al{sub 0.14}Ga{sub 0.86}N active layer emission peaks towards the low energy side at low fluence ion irradiation has been noted. - Highlights: • Effects of Si{sup 9+} ion irradiation on AlGaN double heterostructures were investigated. • Dislocation densities of GaN reduced at liquid nitrogen temperature irradiation. • Variation in phase shift on Al{sub 0.33}Ga{sub 0.77}N surfaces was measured by EFM. • Capacitance per unit area values of AFM tip-sample surface system were calculated. • Si{sup 9+} irradiations play an important role to tune the energy gap in Al{sub 0.14}Ga{sub 0.86}N.

  19. Envelope model for passive magnetic focusing of an intense proton or ion beam propagating through thin foils

    Directory of Open Access Journals (Sweden)

    Steven M. Lund

    2013-04-01

    Full Text Available Ion beams (including protons with low emittance and high space-charge intensity can be propagated with normal incidence through a sequence of thin metallic foils separated by vacuum gaps of order the characteristic transverse beam extent to transport/collimate the beam or to focus it to a small transverse spot. Energetic ions have sufficient range to pass through a significant number of thin foils with little energy loss or scattering. The foils reduce the (defocusing radial electric self-field of the beam while not altering the (focusing azimuthal magnetic self-field of the beam, thereby allowing passive self-beam focusing if the magnetic field is sufficiently strong relative to the residual electric field. Here we present an envelope model developed to predict the strength of this passive (beam generated focusing effect under a number of simplifying assumptions including relatively long pulse duration. The envelope model provides a simple criterion for the necessary foil spacing for net focusing and clearly illustrates system focusing properties for either beam collimation (such as injecting a laser-produced proton beam into an accelerator or for magnetic pinch focusing to a small transverse spot (for beam driven heating of materials. An illustrative example is worked for an idealization of a recently performed laser-produced proton-beam experiment to provide guidance on possible beam focusing and collimation systems. It is found that foils spaced on the order of the characteristic transverse beam size desired can be employed and that envelope divergence of the initial beam entering the foil lens must be suppressed to limit the total number of foils required to practical values for pinch focusing. Relatively modest proton-beam current at 10 MeV kinetic energy can clearly demonstrate strong magnetic pinch focusing achieving a transverse rms extent similar to the foil spacing (20–50  μm gaps in beam propagation distances of tens of mm

  20. Ion implantation on nickel targets by means of repetitive plasma focus device

    Energy Technology Data Exchange (ETDEWEB)

    Vitulli, S.; Rapezzi, L. [ENEA Brasimone, Camugnano, Bologna (Italy); Apicella, M.L.; Samuelli, M. [ENEA Frascati, Frascati, Roma (Italy)

    2004-07-01

    Some test has been done in order to assess the possible use of a plasma focus as an implanter. The device utilized is the repetitive Plasma Focus operating in the ENEA Brasimone Center. The implanted sample is a sheet of Nickel with a surface of 17 cm{sup 2} inserted in a rigid sample at a variable distance from the top of the anode. After irradiation the sample is analyzed with Auger spectroscopy that provides the surface concentration of the various elements on the sample at different implantation depths. The result of the analysis shows that the Plasma Focus is an effective implantation source, even for metallurgical applications. (orig.)