Nanocrystalline Cobalt-doped SnO2 Thin Film: A Sensitive Cigarette Smoke Sensor

Directory of Open Access Journals (Sweden)

Patil Shriram B.

2011-11-01

Full Text Available This article discusses a sensitive cigarette smoke sensor based on Cobalt doped Tin oxide (Co-SnO2 thin films deposited on glass substrate by a conventional Spray Pyrolysis technique. The Co-SnO2 thin films have been characterized by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM and Energy Dispersive X-ray Spectroscopy (EDAX. The XRD spectrum shows polycrystalline nature of the film with a mixed phase comprising of SnO2 and Co3O4. The SEM image depicts uniform granular morphology covering total substrate surface. The compositional analysis derived using EDAX confirmed presence of Co in addition to Sn and O in the film. Cigarette smoke sensing characteristics of the Co-SnO2 thin film have been studied under atmospheric condition at different temperatures and smoke concentration levels. The sensing parameters such as sensitivity, response time and recovery time are observed to be temperature dependent, exhibiting better results at 330 oC.

Lattice positions of Sn in Cu2ZnSnS4 nanoparticles and thin films studied by synchrotron X-ray absorption near edge structure analysis

Science.gov (United States)

Zillner, E.; Paul, A.; Jutimoosik, J.; Chandarak, S.; Monnor, T.; Rujirawat, S.; Yimnirun, R.; Lin, X. Z.; Ennaoui, A.; Dittrich, Th.; Lux-Steiner, M.

2013-06-01

Lattice positions of Sn in kesterite Cu2ZnSnS4 and Cu2SnS3 nanoparticles and thin films were investigated by XANES (x-ray absorption near edge structure) analysis at the S K-edge. XANES spectra were analyzed by comparison with simulations taking into account anti-site defects and vacancies. Annealing of Cu2ZnSnS4 nanoparticle thin films led to a decrease of Sn at its native and defect sites. The results show that XANES analysis at the S K-edge is a sensitive tool for the investigation of defect sites, being critical in kesterite thin film solar cells.

SnO2 thin film synthesis for organic vapors sensing at ambient temperature

Directory of Open Access Journals (Sweden)

N.H. Touidjen

2016-12-01

Full Text Available The present work is a study of tin dioxide (SnO2 based thin sensitive layer dedicated to organic vapors detection at ambient temperature. SnO2 thin film was deposited by chemical spray pyrolysis technique. The glass substrate temperature was kept to 400 °C, using a starting solution of 0.1 M tin (II dichloride dihydrate (SnCl2, 2H2O. Films structural and morphological properties were characterized using X-ray diffraction (XRD, scanning electron microscopy (SEM and atomic force microscope (AFM respectively. Films optical characteristics were studied using UV-VIS spectrophotometer. XRD revealed the presence of pure SnO2 polycrystalline thin film with a tetragonal rutile structure. The SEM and AFM observations confirmed the granular morphology with presence of pores in the film surface. The prepared film was tested in various organic vapors (ethanol, methanol and acetone at ambient operating temperature (25 °C ± 2 °C. The obtained results suggested that SnO2 is more sensitive to ethanol vapor with a maximum sensitivity of 35% higher than to methanol and acetone vapors (1% and 3%. The realized SnO2 based sensor demonstrated fast response and recovery times as revealed by the values of 2 s to 3 s towards 47 ppm of ethanol vapor. Keywords: SnO2 thin film, Sensitivity, XRD, SEM, AFM, UV–visible

Pulsed laser deposition of Cu-Sn-S for thin film solar cells

DEFF Research Database (Denmark)

Ettlinger, Rebecca Bolt; Crovetto, Andrea; Bosco, Edoardo

Thin films of copper tin sulfide were deposited from a target of the stoichiometry Cu:Sn:S ~1:2:3 using pulsed laser deposition (PLD). Annealing with S powder resulted in films close to the desired Cu2SnS3 stoichiometry although the films remained Sn rich. Xray diffraction showed that the final...... films contained both cubic-phase Cu2SnS3 and orthorhombic-phase SnS...

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

The Structural Changes of the Sn(y)OX Thin Films Under Influence of Heat Treament

Science.gov (United States)

Vong, V.

2001-04-01

Composite oxide Sn(y) Ox made by thermal oxidation of the Sn(y)-bimetal thin films, in which y is the doped-materials as well as Sb, Ag or Pd. The Sn(y)-bimetal thin films have been made by evaporation in high vacuum onto NaCl-monocrystall and optical glass substrates. In the work the tin and the doped material (y) were put on two different boats and then both the boats were simultaniously heated to evaporate. The Sn(y)Ox thin films were annealed at the differential temperatures. The structural changes of its have been investigated by using X-ray diffraction and transmission electron microscope.

Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

2015-02-15

Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

Science.gov (United States)

Takase, Ryohei; Ishimaru, Manabu; Uchida, Noriyuki; Maeda, Tatsuro; Sato, Kazuhisa; Lieten, Ruben R.; Locquet, Jean-Pierre

2016-12-01

Thermally induced crystallization processes for amorphous GeSn thin films with Sn concentrations beyond the solubility limit of the bulk crystal Ge-Sn binary system have been examined by X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, and (scanning) transmission electron microscopy. We paid special attention to the behavior of Sn before and after recrystallization. In the as-deposited specimens, Sn atoms were homogeneously distributed in an amorphous matrix. Prior to crystallization, an amorphous-to-amorphous phase transformation associated with the rearrangement of Sn atoms was observed during heat treatment; this transformation is reversible with respect to temperature. Remarkable recrystallization occurred at temperatures above 400 °C, and Sn atoms were ejected from the crystallized GeSn matrix. The segregation of Sn became more pronounced with increasing annealing temperature, and the ejected Sn existed as a liquid phase. It was found that the molten Sn remains as a supercooled liquid below the eutectic temperature of the Ge-Sn binary system during the cooling process, and finally, β-Sn precipitates were formed at ambient temperature.

Laser created thin films sensors based on Sn- and indium compounds

Czech Academy of Sciences Publication Activity Database

Myslík, V.; Vysloužil, F.; Vrňata, M.; Fryček, R.; Jelínek, Miroslav; Lančok, Ján

2002-01-01

Roč. 12, č. 2 (2002), s. 329-333 ISSN 1054-660X Institutional research plan: CEZ:AV0Z1010921 Keywords : PLD * Sn-based thin films * In-based thin films Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.798, year: 2002

Structural and optical characteristics of SnS thin film prepared by SILAR

Directory of Open Access Journals (Sweden)

Mukherjee A.

2015-12-01

Full Text Available SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR method. The films were prepared using tin chloride as tin (Sn source and ammonium sulfide as sulphur (S source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

Development of SnS (FTO/CdS/SnS) thin films by nebulizer spray pyrolysis (NSP) for solar cell applications

Science.gov (United States)

Arulanantham, A. M. S.; Valanarasu, S.; Jeyadheepan, K.; Ganesh, V.; Shkir, Mohd

2018-01-01

Herein we report a well-organized analysis on various key-properties of SnS thin films for solar cell fabricated by nebulizer spray pyrolysis technique. X-ray diffraction study reveals the polycrystalline nature of deposited films with orthorhombic crystal structure. The crystallite size was calculated and observed to be in the range of 8-28 nm with increasing molarity of precursor solution. The stoichiometry composition of SnS was confirmed by EDX study. SEM/AFM studies divulge the well-covered deposited surface with spherical grains and the size of grains is increasing with concentration and so the roughness. A remarkable decrease in band gap from 2.6 eV to 1.6 eV was noticed by raising the molar concentration from 0.025 M up to 0.075 M. A single strong emission peak at about 825 nm is observed in PL spectra with enhanced intensity which may be attributed to near band edge emission. From the Hall effect measurement, it was found that the SnS thin film exhibits p-type conductivity. The calculated values of resistivity and carrier concentration are 0.729 Ω cm and 3.67 × 1018/cm3 respectively. Furthermore, to study the photovoltaic properties of SnS thin films a heterojunction solar cell, FTO/n-CdS/p-SnS was produced and the conversion efficiency was recorded about 0.01%.

Fabrication and sulfurization of Cu{sub 2}SnS{sub 3} thin films with tuning the concentration of Cu-Sn-S precursor ink

Energy Technology Data Exchange (ETDEWEB)

Wang, Chi-Jie [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China); Shei, Shih-Chang, E-mail: scshei@mail.nutn.edu.tw [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shih-Chang [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China)

2016-12-01

Highlights: • Tuning the relative reaction rate of component phases proved to be beneficial in controlling the reaction process. • Low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology. • Optical band-gap energy measured at 1.346 eV suitable for thin-film solar cell applications. - Abstract: In this study, Cu-Sn-S nanoinks were synthesized by combining chelating polyetheramine to Cu, Sn, S powders of various concentrations. X-ray diffraction patterns indicate that nanoinks synthesized at low concentrations are composed almost entirely of binary phases SnS and Cu{sub 2}S. Synthesizing nanoinks at higher concentrations decreased the quantity of binary phase and led to the appearance of ternary phase Cu{sub 4}SnS{sub 4}. Following sulfurization, single phase Cu{sub 2}SnS{sub 3} (CTS) thin film was obtained from nanoinks of low concentration; however, impurities, such as Cu{sub 2}S were detected in the thin film obtained from nanoinks of high concentration. This can be attributed to the fact that lower concentrations reduce the reactivity of all the elements. As a result, the SnS phase reacted more readily and more rapidly, resulting in the early formation of a stoichiometric CTS thin film during sulfurization. Under these reaction conditions, Cu{sub 2}S and SnS transform into CTS and thereby prevent the formation of unwanted phases of Cu{sub 2}S and Cu{sub 4}SnS{sub 4}. Raman spectra revealed that second phase Cu{sub 2}S phase remained in the high-concentration samples, due to an increase in reactivity due to the participation of a greater proportion of the copper in the reaction. The surface microstructure of low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology and an atomic composition ratio of Cu:Sn:S = 34.69:15.90:49.41, which is close to stoichiometric. Hall measurement revealed that low-concentration sample has superior electrical properties; i.e., a hole

Molybdenum Doped SnO2 Thin Films as a Methanol Vapor Sensor

Directory of Open Access Journals (Sweden)

Patil Shriram B.

2013-02-01

Full Text Available The molybdenum doped SnO2 thin films were synthesized by conventional spray pyrolysis route and has been investigated for the methanol vapor sensing. The structural and elemental composition analysis of thin films was carried out by X- ray diffraction and Scanning Electron Microscopy (SEM and Energy Dispersive X-ray spectroscopy (EDAX.The XRD spectrum revealed that the thin films have the polycrystalline nature with a mixed phase comprising of SnO2 and MoO3. The scanning Electron Microscopy (SEM clears that the surface morphology observed to be granular, uniformly covering the entire surface area of the thin film. The methanol vapor sensing studies were performed in dry air at the different temperatures. The influence of the concentration of Molybdenum and operating temperature on the sensor performance has been investigated.

Cylindrical multiwire two-coordinate chamber with foam-polyurethane supporting element

International Nuclear Information System (INIS)

Vakhtin, V.G.; Travkin, V.I.

1988-01-01

Construction and technology of producing the two-coordinate cylindrical chamber with foam-polyurethane supporting element are described. Use of foam-polyurethane permits to reduce the substance quantity at particle path up to 0.2 g/cm 2 . The supporting element represents a foam-polyurethane tube the outside diameter being 126 mm, the thickness - 6.5 mm and the length 600 mm. Special attention was paid to study of elastic properties of foam-polyurethane tubes and to the effect of the chamber working fluid vapors on the tube sizes. It is stated that after a sustained load (3750 N for 6 days) the tube shrinks by 1.25 %. The foam-polyurethane supporting element arranged in 50% argon + 33% methane + 17% methylane mixture didn't change its sizes in the limit of 0.05% for three weeks. The chamber operates under self-qquenching streamer conditions

Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

Energy Technology Data Exchange (ETDEWEB)

Stevenson, Cynthia; Marcinek, M.; Hardwick, L.J.; Richardson, T.J.; Song, X.; Kostecki, R.

2008-02-01

In this paper we report results of a novel synthesis method of thin-film composite Sn/C anodes for lithium batteries. Thin layers of graphitic carbon decorated with uniformly distributed Sn nanoparticles were synthesized from a solid organic precursor Sn(IV) tert-butoxide by a one step microwave plasma chemical vapor deposition (MPCVD). The thin-film Sn/C electrodes were electrochemically tested in lithium half cells and produced a reversible capacity of 440 and 297 mAhg{sup -1} at C/25 and 5C discharge rates, respectively. A long term cycling of the Sn/C nanocomposite anodes showed 40% capacity loss after 500 cycles at 1C rate.

Swift heavy ion irradiated SnO_2 thin film sensor for efficient detection of SO_2 gas

International Nuclear Information System (INIS)

Tyagi, Punit; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

2016-01-01

Highlights: • Response of Ni"7"+ ion irradiated (100 MeV) SnO_2 film have been performed. • Effect of irradiation on the structural and optical properties of SnO_2 film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni"7"+ ion irradiated (100 MeV) and non-irradiated SnO_2 thin film sensor prepared under same conditions have been performed towards SO_2 gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO_2 thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO_2 thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO_2 thin film by Ni"7"+ ions.

Annealing of SnO2 thin films by ultra-short laser pulses

NARCIS (Netherlands)

Scorticati, D.; Illiberi, A.; Bor, T.; Eijt, S.W.H.; Schut, H.; Römer, G.R.B.E.; Lange, D.F. de; Huis In't Veld, A.J.

2014-01-01

Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO2 thin films by means of thermal processing. Industrial grade SnO2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance

Preparation and characterization of Cu2SnS3 thin films by electrodeposition

Science.gov (United States)

Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.

Electrodeposited Cu2ZnSnS4 thin films

CSIR Research Space (South Africa)

Valdes, M

2014-05-01

Full Text Available Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic...

SnO{sub 2}:F thin films deposited by RF magnetron sputtering: effect of the SnF{sub 2} amount in the target on the physical properties

Energy Technology Data Exchange (ETDEWEB)

De Moure F, F. [universidad Autonoma de Queretaro, Facultad de Quimica Materiales, Queretaro 76010, Queretaro (Mexico); Guillen C, A.; Nieto Z, K. E.; Quinones G, J. G.; Hernandez H, A.; Melendez L, M.; Olvera, M. de la L., E-mail: fcomoure@hotmail.com [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07360 Mexico D. F. (Mexico)

2013-08-01

SnO{sub 2}:F thin films were prepared by RF magnetron sputtering onto glass substrates using SnF{sub 2} as fluorine source. The films were deposited under a mixed argon/hydrogen atmosphere at a substrate temperature of 500 C. The X-ray diffraction shows that polycrystalline films were grown with a phases mixture of SnO{sub 2} and Sn O. The optical transmittance is between 80 and 90%. The physical properties of the films suggest that SnO{sub 2} thin films grown with small SnF{sub 2} content in the target can be considered as candidates for transparent electrodes. (Author)

Cu2SixSn1-xS3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

Science.gov (United States)

Yan, Chang; Liu, Fang-Yang; Lai, Yan-Qing; Li, Jie; Liu, Ye-Xiang

2011-10-01

We report the preparation of Cu2SixSn1-xS3 thin films for thin film solar cell absorbers using the reactive magnetron co-sputtering technique. Energy dispersive spectrometer and x-ray diffraction analyses indicate that Cu2Si1-xSnxS3 thin films can be synthesized successfully by partly substituting Si atoms for Sn atoms in the Cu2SnS3 lattice, leading to a shrinkage of the lattice, and, accordingly, by 2θ shifting to larger values. The blue shift of the Raman peak further confirms the formation of Cu2SixSn1-xS3. Environmental scanning electron microscope analyses reveal a polycrystalline and homogeneous morphology with a grain size of about 200-300 nm. Optical measurements indicate an optical absorption coefficient of higher than 104 cm-1 and an optical bandgap of 1.17±0.01 eV.

Growth and characterization of tin oxide thin films and fabrication of transparent p-SnO/n-ZnO p–n hetero junction

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C., E-mail: sanalcusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India); Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology (India); Jayaraj, M.K. [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682 022 (India)

2013-07-01

Highlights: • Growth of p-type semiconducting SnO thin films by rf sputtering. • Varying the type of charge carriers with oxygen partial pressure. • Atomic percentage of SnO{sub x} thin films from the XPS analysis. • Demonstration of transparent p–n hetero junctions fabricated in the structure glass/ITO/n-ZnO/p-SnO. -- Abstract: p-Type and n-type tin oxide thin films were deposited by rf-magnetron sputtering of metal tin target by varying the oxygen pressure. Chemical composition of SnO thin film according to the intensity of the XPS peak is about 48.85% and 51.15% for tin and oxygen respectively. Nearest neighbor distance of the atoms calculated from SAED patterns is 2.9 Åand 2.7 Åfor SnO and SnO{sub 2} respectively. The Raman scattering spectrum obtained from SnO thin films showed two peaks, one at 113 cm{sup −1} and the other at 211 cm{sup −1}. Band gap of as-deposited SnO{sub x} thin films vary from 1.6 eV to 3.2 eV on varying the oxygen partial pressure from 3% to 30% which indicates the oxidization of metallic phase Sn to SnO and SnO{sub 2}. p-Type conductivity of SnO thin films and n-type conductivity of SnO{sub 2} thin films were confirmed through Hall coefficient measurement. Transparent p–n hetero junction fabricated in the structure glass/ITO/n-ZnO/p-SnO shows rectification with forward to reverse current ratio as 12 at 4.5 V.

The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

International Nuclear Information System (INIS)

Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.; Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Koetschau, I.; Schock, H.-W.

2009-01-01

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu 2 ZnSnS 4 based thin film solar cells. A kesterite based solar cell (size 0.5 cm 2 ) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu 2 SnS 3 and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu 3 Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu 6 Sn 5 and Sn phases were detected. The formation mechanism of Cu 2 SnS 3 involves the binary sulphides Cu 2-x S and SnS 2 in the absence of the binary precursor phase Cu 6 Sn 5 . The presence of Cu 6 Sn 5 leads to a preferred formation of Cu 2 SnS 3 via the reaction educts Cu 2-x S and SnS 2 in the presence of a SnS 2 (Cu 4 SnS 6 ) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase

Preparation of SnSe thin films by encapsulated selenization

International Nuclear Information System (INIS)

Sabar D. Hutagalung; Samsudi Sakrani; Yussof Wahab

1994-01-01

Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system

Ambipolar SnOx thin-film transistors achieved at high sputtering power

Science.gov (United States)

Li, Yunpeng; Yang, Jia; Qu, Yunxiu; Zhang, Jiawei; Zhou, Li; Yang, Zaixing; Lin, Zhaojun; Wang, Qingpu; Song, Aimin; Xin, Qian

2018-04-01

SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 °C in ambient air. X-ray-diffraction patterns showed polycrystallisation of SnO and Sn in the annealed SnOx films. Scanning-electron-microscopy images revealed that microgrooves appeared after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggest that they were most likely Sn clusters. Atomic force microscopy images indicate an abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has generally been thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to enhance the stoichiometric balance.

Dependence of intermetallic compound formation on the sublayer stacking sequence in Ag–Sn bilayer thin films

International Nuclear Information System (INIS)

Rossi, P.J.; Zotov, N.; Bischoff, E.; Mittemeijer, E.J.

2016-01-01

Intermetallic compound (IMC) formation in thermally-evaporated Ag–Sn bilayer thin films has been investigated employing especially X-ray diffraction (XRD) and (S)TEM methods. The specific IMCs that are present in the as-deposited state depend sensitively on the stacking sequence of the sublayers. In case of Sn on top of Ag, predominantly Ag 3 Sn is formed, whereas Ag 4 Sn is predominantly present in the as-deposited state for Ag on top of Sn. In the latter case this is accompanied by an extremely fast uptake of a large amount of Sn by the Ag sublayer, leaving behind macroscopic voids in the Sn sublayer. The results are discussed on the basis of the thermodynamics and kinetics of (IMC) product-layer growth in thin films. It is shown that both thermodynamic and kinetic arguments explain the contrasting phenomena observed.

An economic CVD technique for pure SnO2 thin films deposition ...

Indian Academy of Sciences (India)

An economic CVD technique for pure SnO2 thin films deposition: Temperature effects ..... C are depicted in figure 7. It is observed that the cut-off wave- ... cating that the energy gap of the SnO2 films varies among. 3·54, 3·35 and 1·8 eV.

Thin films of preparation SnOx by evaporation and pulverization reactive in vapor phase

International Nuclear Information System (INIS)

Solis, J.; Estrada, W.; Soares, M.; Schreiner, W.

1993-01-01

In this work we obtained SnO x thin films by reactive evaporation. The structure and composition of the films were characterized by x-ray diffraction and Moessbauer spectroscopy. The samples as deposited present different kind of microstructures depending on the parameters deposition, such as substrate temperature and oxygen pressure. In general the samples present three pushes: Sn, SnO and SnO 2 . When the samples are subjected to heat treatment, the as deposited SnO x finally converts to SnO 2 . (authors) 10 refs., 4 figs

Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering

International Nuclear Information System (INIS)

Fang, Feng; Zhang, Yeyu; Wu, Xiaoqin; Shao, Qiyue; Xie, Zonghan

2015-01-01

Graphical abstract: The best SnO 2 :N TCO film: about 80% transmittance and 9.1 × 10 −4 Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO 2 :N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10 −4 Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm

Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001 with tunable Fermi levels

Directory of Open Access Journals (Sweden)

Hua Guo

2014-05-01

Full Text Available In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1 thin films grown by molecular beam epitaxy on SrTiO3(001. Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES. ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo

2017-05-22

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

2012-07-15

Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

Optoelectronic properties of SnO2 thin films sprayed at different deposition times

Science.gov (United States)

Allag, Abdelkrim; Saâd, Rahmane; Ouahab, Abdelouahab; Attouche, Hafida; Kouidri, Nabila

2016-04-01

This article presents the elaboration of tin oxide (SnO2) thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film properties are investigated. The films are characterized by several techniques such as x-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible (UV-Vis) transmission, and four-probe point measurements, and the results suggest that the prepared films are uniform and well adherent to the substrates. X-ray diffraction (XRD) patterns show that SnO2 film is of polycrystal with cassiterite tetragonal crystal structure and a preferential orientation along the (110) plane. The calculated grain sizes are in a range from 32.93 nm to 56.88 nm. Optical transmittance spectra of the films show that their high transparency average transmittances are greater than 65% in the visible region. The optical gaps of SnO2 thin films are found to be in a range of 3.64 eV-3.94 eV. Figures of merit for SnO2 thin films reveal that their maximum value is about 1.15 × 10-4 Ω-1 at λ = 550 nm. Moreover, the measured electrical resistivity at room temperature is on the order of 10-2 Ω·cm.

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo; Zheng, Tao; Sun, Ce; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Quevedo-Lopez, Manuel; Gnade, Bruce E.

2017-01-01

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed

Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

Science.gov (United States)

Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

2014-12-01

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

Fabrication of SnS thin films by the successive ionic layer adsorption and reaction (SILAR) method

International Nuclear Information System (INIS)

Ghosh, Biswajit; Das, Madhumita; Banerjee, Pushan; Das, Subrata

2008-01-01

Tin sulfide films of 0.20 µm thickness were grown on glass and ITO substrates by the successive ionic layer adsorption and reaction (SILAR) method using SnSO 4 and Na 2 S solution. The as-grown films were well covered and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films and provided information on the crystallite size and residual strain of the thin films. FESEM revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDX showed that as-grown SnS films were slightly rich in tin component. High absorption in the visible region was evident from UV–Vis transmission spectra. PL studies were carried out with 550 nm photon excitation. To the best of our knowledge, however, no attempt has been made to fabricate a SnS thin film using the SILAR technique

Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

Science.gov (United States)

Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

2016-12-01

In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

Pilot Study: Foam Wedge Chin Support Static Tolerance Testing

Science.gov (United States)

2017-10-24

AFRL-SA-WP-SR-2017-0026 Pilot Study: Foam Wedge Chin Support Static Tolerance Testing Austin M. Fischer, BS1; William W...COVERED (From – To) April – October 2017 4. TITLE AND SUBTITLE Pilot Study: Foam Wedge Chin Support Static Tolerance Testing 5a. CONTRACT NUMBER...PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) USAF School of Aerospace

Preparation and characterization of electrodeposited SnS:In thin films: Effect of In dopant

Science.gov (United States)

Kafashan, Hosein; Balak, Zohre

2017-09-01

SnS:In thin films were grown on fluorine doped tin oxide (FTO) substrate by cathodic electrodeposition technique. The solution was containing 2 mM SnCl2 and 16 mM Na2S2O3 and different amounts of 1 mM InCl3 as In-dopant. The pH, bath temperature, deposition time, and deposition potential (E) were fixed at 2.1, 60 °C, 30 min, and - 1 V, respectively. The XRD results showed that the synthesized films were polycrystalline orthorhombic SnS. The XPS results demonstrated that the films were composed of Sn, S and In. According to the FESEM images, an increase in In-dopant concentration leads to a change in morphology from grain-like to sheet-like having a nanoscale thickness of 20-80 nm and fiber-like. The PL spectra of undoped SnS exhibited four emission peaks including a UV peak, two blue emission peaks, and an IR emission peak. According to the UV-Vis spectra, the direct band gap of SnS:In thin films was estimated to be 1.40-1.66 eV.

The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

2009-02-02

The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

A facile inexpensive route for SnS thin film solar cells with SnS{sub 2} buffer

Energy Technology Data Exchange (ETDEWEB)

Gedi, Sreedevi [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Minna Reddy, Vasudeva Reddy, E-mail: drmvasudr9@gmail.com [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Pejjai, Babu [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India); Jeon, Chan-Wook [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Park, Chinho, E-mail: chpark@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, 280Daehak-ro, Gyeongsan 712-749, Republic of Korea (Korea, Republic of); Ramakrishna Reddy, K.T., E-mail: ktrkreddy@gmail.com [Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswasra University, Tirupati 517 502 (India)

2016-05-30

Graphical abstract: PYS spectra of SnS/SnS{sub 2} interface and the related band diagram. - Highlights: • A low cost SnS solar cell is developed using chemical bath deposition. • We found E{sub I} & χ of SnS (5.3 eV & 4.0 eV) and SnS{sub 2} (6.9 eV & 4.1 eV) films from PYS. • Band offsets of 0.1 eV (E{sub c}) and 1.6 eV (E{sub v}) are estimated for SnS/SnS{sub 2} junction. • SnS based solar cell showed a conversion efficiency of 0.51%. - Abstract: Environment-friendly SnS based thin film solar cells with SnS{sub 2} as buffer layer were successfully fabricated from a facile inexpensive route, chemical bath deposition (CBD). Layer studies revealed that as-grown SnS and SnS{sub 2} films were polycrystalline; (1 1 1)/(0 0 1) peaks as the preferred orientation; 1.3 eV/2.8 eV as optical band gaps; and showed homogeneous microstructure with densely packed grains respectively. Ionization energy and electron affinity values were found by applying photoemission yield spectroscopy (PYS) to the CBD deposited SnS and SnS{sub 2} films for the first time. These values obtained as 5.3 eV and 4.0 eV for SnS films; 6.9 eV and 4.1 eV for SnS{sub 2} films. The band alignment of SnS/SnS{sub 2} junction showed TYPE-II heterostructure. The estimated conduction and valance band offsets were 0.1 eV and 1.6 eV respectively. The current density–voltage (J–V) measurements of the cell showed open circuit voltage (V{sub oc}) of 0.12 V, short circuit current density (J{sub sc}) of 10.87 mA cm{sup −2}, fill factor (FF) of 39% and conversion efficiency of 0.51%.

Optoelectronic properties of SnO2 thin films sprayed at different deposition times

International Nuclear Information System (INIS)

Abdelkrim, Allag; Rahmane, Saâd; Abdelouahab, Ouahab; Hafida, Attouche; Nabila, Kouidri

2016-01-01

This article presents the elaboration of tin oxide (SnO 2 ) thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film properties are investigated. The films are characterized by several techniques such as x-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible (UV–Vis) transmission, and four-probe point measurements, and the results suggest that the prepared films are uniform and well adherent to the substrates. X-ray diffraction (XRD) patterns show that SnO 2 film is of polycrystal with cassiterite tetragonal crystal structure and a preferential orientation along the (110) plane. The calculated grain sizes are in a range from 32.93 nm to 56.88 nm. Optical transmittance spectra of the films show that their high transparency average transmittances are greater than 65% in the visible region. The optical gaps of SnO 2 thin films are found to be in a range of 3.64 eV–3.94 eV. Figures of merit for SnO 2 thin films reveal that their maximum value is about 1.15 × 10 −4 Ω −1 at λ = 550 nm. Moreover, the measured electrical resistivity at room temperature is on the order of 10 −2 Ω·cm. (paper)

Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

International Nuclear Information System (INIS)

Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

2011-01-01

Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

Properties of Sn-doped TiO2 nanotubes fabricated by anodization of co-sputtered Ti–Sn thin films

International Nuclear Information System (INIS)

Kyeremateng, Nana Amponsah; Hornebecq, Virginie; Knauth, Philippe; Djenizian, Thierry

2012-01-01

Self-organized Sn-doped TiO 2 nanotubes (nts) were fabricated for the first time, by anodization of co-sputtered Ti and Sn thin films. This nanostructured material was characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, UV–vis spectroscopy and transmission electron microscopy. Due to their remarkable properties, Sn-doped TiO 2 nts can find potential applications in Li-ion microbatteries, photovoltaics, and catalysis. Particularly, the electrochemical performance as an anode material for Li-ion microbatteries was evaluated in Li test cells. With current density of 70 μA cm −2 (1 C) and cut-off potential of 1 V, Sn-doped TiO 2 nts showed improved performance compared to simple TiO 2 nts, and differential capacity plots revealed that the material undergoes full electrochemical reaction as a Rutile-type TiO 2 .

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

Science.gov (United States)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Synthesis and characterization of binary ZnO-SnO2 (ZTO) thin films by e-beam evaporation technique

Science.gov (United States)

Bibi, Shagufta; Shah, A.; Mahmood, Arshad; Ali, Zahid; Raza, Qaisar; Aziz, Uzma; Haneef; Waheed, Abdul; Shah, Ziaullah

2018-04-01

The binary ZnO-SnO2 (ZTO) thin films with varying SnO2 concentrations (5, 10, 15, and 20 wt%) were grown on glass substrate by e-beam evaporation technique. The prepared ZTO films were annealed at 400 °C in air. These films were then characterized to investigate their structural, optical, and electrical properties as a function of SnO2 concentration. XRD analysis reveals that the crystallinity of the film decreases with the addition of SnO2 and it transforms to an amorphous structure at a composition of 40% SnO2 and 60% ZnO. Morphology of the films was examined by atomic force microscopy which points out that surface roughness of the films decreases with the increasing of SnO2 in the film. Optical properties such as optical transparency, band-gap energy, and optical constants of these films were examined by spectrophotometer and spectroscopic Ellipsometer. It was observed that the average optical transmission of mixed films improves with incorporation of SnO2. In addition, the band-gap energy of the films was determined to be in the range of 3.37-3.7 eV. Furthermore, it was found that the optical constants (n and k) decrease with the addition of SnO2. Similarly, it is observed that the electrical resistivity increases nonlinearly with the increase in SnO2 in ZnO-SnO2 thin films. However, it is noteworthy that the highest figure of merit (FOM) value, i.e., 55.87 × 10-5 Ω-1, is obtained for ZnO-SnO2 (ZTO) thin film with 40 wt% of SnO2 composition. Here, we suggest that ZnO-SnO2 (ZTO) thin film with composition of 60:40 wt% can be used as an efficient TCO film due to the improved transmission, and reduced RMS value and highest FOM value.

A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

Science.gov (United States)

Pat, Suat; Özen, Soner; Korkmaz, Şadan

2018-01-01

We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

Science.gov (United States)

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Swift heavy ion irradiated SnO{sub 2} thin film sensor for efficient detection of SO{sub 2} gas

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Punit; Sharma, Savita [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

2016-07-15

Highlights: • Response of Ni{sup 7+} ion irradiated (100 MeV) SnO{sub 2} film have been performed. • Effect of irradiation on the structural and optical properties of SnO{sub 2} film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni{sup 7+} ion irradiated (100 MeV) and non-irradiated SnO{sub 2} thin film sensor prepared under same conditions have been performed towards SO{sub 2} gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO{sub 2} thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO{sub 2} thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO{sub 2} thin film by Ni{sup 7+} ions.

Nanocrystalline SnO2:F Thin Films for Liquid Petroleum Gas Sensors

Directory of Open Access Journals (Sweden)

Sutichai Chaisitsak

2011-07-01

Full Text Available This paper reports the improvement in the sensing performance of nanocrystalline SnO2-based liquid petroleum gas (LPG sensors by doping with fluorine (F. Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer. The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO2 films was investigated. Atomic Force Microscopy (AFM and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO2 with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time of the SnO2:F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO2 was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO2:F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection.

3D macroporous electrode and high-performance in lithium-ion batteries using SnO2 coated on Cu foam

Science.gov (United States)

Um, Ji Hyun; Choi, Myounggeun; Park, Hyeji; Cho, Yong-Hun; Dunand, David C.; Choe, Heeman; Sung, Yung-Eun

2016-01-01

A three-dimensional porous architecture makes an attractive electrode structure, as it has an intrinsic structural integrity and an ability to buffer stress in lithium-ion batteries caused by the large volume changes in high-capacity anode materials during cycling. Here we report the first demonstration of a SnO2-coated macroporous Cu foam anode by employing a facile and scalable combination of directional freeze-casting and sol-gel coating processes. The three-dimensional interconnected anode is composed of aligned microscale channels separated by SnO2-coated Cu walls and much finer micrometer pores, adding to surface area and providing space for volume expansion of SnO2 coating layer. With this anode, we achieve a high reversible capacity of 750 mAh g−1 at current rate of 0.5 C after 50 cycles and an excellent rate capability of 590 mAh g−1 at 2 C, which is close to the best performance of Sn-based nanoscale material so far. PMID:26725652

Enhanced hydrogen storage capacity of Ni/Sn-coated MWCNT nanocomposites

Science.gov (United States)

Varshoy, Shokufeh; Khoshnevisan, Bahram; Behpour, Mohsen

2018-02-01

The hydrogen storage capacity of Ni-Sn, Ni-Sn/multi-walled carbon nanotube (MWCNT) and Ni/Sn-coated MWCNT electrodes was investigated by using a chronopotentiometry method. The Sn layer was electrochemically deposited inside pores of nanoscale Ni foam. The MWCNTs were put on the Ni-Sn foam with nanoscale porosities using an electrophoretic deposition method and coated with Sn nanoparticles by an electroplating process. X-ray diffraction and energy dispersive spectroscopy results indicated that the Sn layer and MWCNTs are successfully deposited on the surface of Ni substrate. On the other hand, a field-emission scanning electron microscopy technique revealed the morphology of resulting Ni foam, Ni-Sn and Ni-Sn/MWCNT electrodes. In order to measure the hydrogen adsorption performed in a three electrode cell, the Ni-Sn, Ni-Sn/MWCNT and Ni/Sn-coated MWCNT electrodes were used as working electrodes whereas Pt and Ag/AgCl electrodes were employed as counter and reference electrodes, respectively. Our results on the discharge capacity in different electrodes represent that the Ni/Sn-coated MWCNT has a maximum discharge capacity of ˜30 000 mAh g-1 for 20 cycles compared to that of Ni-Sn/MWCNT electrodes for 15 cycles (˜9500 mAh g-1). By increasing the number of cycles in a constant current, the corresponding capacity increases, thereby reaching a constant amount for 20 cycles.

Study of sub band gap absorption of Sn doped CdSe thin films

International Nuclear Information System (INIS)

Kaur, Jagdish; Rani, Mamta; Tripathi, S. K.

2014-01-01

The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively

Study of sub band gap absorption of Sn doped CdSe thin films

Energy Technology Data Exchange (ETDEWEB)

Kaur, Jagdish; Rani, Mamta [Department of Physics, Panjab University, Chandigarh- 160014 (India); Tripathi, S. K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160014 (India)

2014-04-24

The nanocrystalline thin films of Sn doped CdSe at different dopants concentration are prepared by thermal evaporation technique on glass substrate at room temperature. The effect of Sn doping on the optical properties of CdSe has been studied. A decrease in band gap value is observed with increase in Sn concentration. Constant photocurrent method (CPM) is used to study the absorption coefficient in the sub band gap region. Urbach energy has been obtained from CPM spectra which are found to increase with amount of Sn dopants. The refractive index data calculated from transmittance is used for the identification of oscillator strength and oscillator energy using single oscillator model which is found to be 7.7 and 2.12 eV, 6.7 and 2.5 eV for CdSe:Sn 1% and CdSe:Sn 5% respectively.

Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

I. Saurdi

2014-01-01

Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

Influence of Sn incorporation on the properties of CuInS2 thin films grown by vacuum evaporation method

International Nuclear Information System (INIS)

Zribi, M.; Rabeh, M. Ben; Brini, R.; Kanzari, M.; Rezig, B.

2006-01-01

Structural, morphological and optical properties of Sn-doped CuInS 2 thin films grown by double source thermal evaporation method were studied. Firstly, the films were annealed in vacuum after evaporation from 250 to 500 deg. C for Sn deposition time equal to 3 min. Secondly, the films deposited for several Sn evaporation times were annealed in vacuum after evaporation at 500 deg. C. The X-ray diffraction spectra indicated that polycrystalline Sn-doped CuInS 2 films were obtained and no Sn binary or ternary phases are observed for the Sn evaporation times equal to 5 min. Scanning electron microscopy observation revealed the decrease of the surface crystallinity with increasing the Sn evaporation times and the annealing temperatures. The Sn-doped samples after annealing have bandgap energy of 1.42-1.50 eV. Furthermore, we found that the Sn-doped CuInS 2 thin films exhibit N-type conductivity after annealing

Thermally evaporated thin films of SnS for application in solar cell devices

International Nuclear Information System (INIS)

Miles, Robert W.; Ogah, Ogah E.; Zoppi, Guillaume; Forbes, Ian

2009-01-01

SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS 2 , Sn 2 S 3 and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. In this work thin films of tin sulphide have been thermally evaporated onto glass and SnO 2 :coated glass substrates with the aim of optimising the properties of the material for use in photovoltaic solar cell device structures. In particular the effects of source temperature, substrate temperature, deposition rate and film thickness on the chemical and physical properties of the layers were investigated. Energy dispersive X-ray analysis was used to determine the film composition, X-ray diffraction to determine the phases present and structure of each phase, transmittance and reflectance versus wavelength measurements to determine the energy bandgap and scanning electron microscopy to observe the surface topology and topography and the properties correlated to the deposition parameters. Using the optimised conditions it is possible to produce thin films of tin sulphide that are pinhole free, conformal to the substrate and that consist of densely packed columnar grains. The composition, phases present and the optical properties of the layers deposited were found to be highly sensitive to the deposition conditions. Energy bandgaps in the range 1.55 eV-1.7 eV were obtained for a film thickness of 0.8 μm, and increasing the film thickness to > 1 μm resulted in a reduction of the energy bandgap to less than 1.55 eV. The applicability of using these films in photovoltaic solar cell device structures is also discussed.

Physical properties of very thin SnS films deposited by thermal evaporation

International Nuclear Information System (INIS)

Cheng Shuying; Conibeer, Gavin

2011-01-01

SnS films with thicknesses of 20–65 nm have been deposited on glass substrates by thermal evaporation. The physical properties of the films were investigated using X-ray diffraction (XRD), scanning electron microscopy, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and ultraviolet–visible-near infrared spectroscopy at room temperature. The results from XRD, XPS and Raman spectroscopy analyses indicate that the deposited films mainly exhibit SnS phase, but they may contain a tiny amount of Sn 2 S 3 . The deposited SnS films are pinhole free, smooth and strongly adherent to the surfaces of the substrates. The color of the SnS films changes from pale yellow to brown with the increase of the film thickness from 20 nm to 65 nm. The very smooth surfaces of the thin films result in their high reflectance. The direct bandgap of the films is between 2.15 eV and 2.28 eV which is much larger than 1.3 eV of bulk SnS, this is deserving to be investigated further.

Electro-oxidation of Ethanol on Carbon Supported PtSn and PtSnNi Catalysts

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Nur Hidayati

2016-03-01

Full Text Available Even though platinum is known as an active electro-catalyst for ethanol oxidation at low temperatures (< 100 oC, choosing the electrode material for ethanol electro-oxidation is a crucial issue. It is due to its property which easily poisoned by a strong adsorbed species such as CO. PtSn-based electro-catalysts have been identified as better catalysts for ethanol electro-oxidation. The third material is supposed to improved binary catalysts performance. This work presents a study of the ethanol electro-oxidation on carbon supported Pt-Sn and Pt-Sn-Ni catalysts. These catalysts were prepared by alcohol reduction. Nano-particles with diameters between 2.5-5.0 nm were obtained. The peak of (220 crystalline face centred cubic (fcc Pt phase for PtSn and PtSnNi alloys was repositioned due to the presence of Sn and/or Ni in the alloy. Furthermore, the modification of Pt with Sn and SnNi improved ethanol and CO electro-oxidation. Copyright © 2016 BCREC GROUP. All rights reserved Received: 10th November 2015; Revised: 1st February 2016; Accepted: 1st February 2016 How to Cite: Hidayati, N., Scott, K. (2016. Electro-oxidation of Ethanol on Carbon Supported PtSn and PtSnNi Catalysts. Bulletin of Chemical Reaction Engineering & Catalysis, 11 (1: 10-20. (doi:10.9767/bcrec.11.1.394.10-20 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.11.1.394.10-20

Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

DEFF Research Database (Denmark)

Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

2017-01-01

We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

Facile synthesis and photo electrochemical performance of SnSe thin films

Science.gov (United States)

Pusawale, S. N.; Jadhav, P. S.; Lokhande, C. D.

2018-05-01

Orthorhombic structured SnSe thin films are synthesized via SILAR (successive ionic layer adsorption and reaction) method on glass substrates. The structural properties of thin films are characterized by x-ray diffraction, scanning electron microscopy studies from which nanoparticles with an elongated shape and hydrophilic behavior are observed. UV -VIS absorption spectroscopy study showed the maximum absorption in the visible region with a direct band gap of 1.55 eV. The photo electrochemical study showed p-type electrical conductivity.

Reactive pulsed laser deposition of Cu2ZnSnS4 thin films in H2S

International Nuclear Information System (INIS)

Surgina, G.D.; Zenkevich, A.V.; Sipaylo, I.P.; Nevolin, V.N.; Drube, W.; Teterin, P.E.; Minnekaev, M.N.

2013-01-01

Cu 2 ZnSnS 4 (CZTS) thin films have been grown by reactive pulsed laser deposition in H 2 S atmosphere, combining the alternate ablation from the metallic (Cu) and alloyed (Zn x Sn) targets at room temperature. The morphological, structural and optical properties of as grown CZTS thin films with varying compositions as well as upon annealing in N 2 atmosphere are investigated by Rutherford backscattering spectrometry, X-ray diffraction, Raman spectroscopy and optical spectrophotometry. The chemical bonding in the “bulk” of the CZTS films is elucidated via hard X-ray photoemission spectroscopy measurements. The formation of the good quality stoichiometric polycrystalline CZTS films is demonstrated upon optimization of the growth parameters. - Highlights: ► The new method of Cu 2 ZnSnS 4 (CZTS) thin films growth in H 2 S was realized. ► CZTS films were grown by pulsed laser deposition from Cu and alloyed Zn–Sn targets. ► The effect of the processing parameters on the CZTS properties was investigated. ► The chemical bonding in the “bulk” of CZTS films was studied

Highly Active, Carbon-supported, PdSn Nano-core, Partially ...

African Journals Online (AJOL)

Carbon-supported, Pt partially covered, PdSn alloy nanoparticles (Pt-PdSn/C) were synthesized via a metathetical reaction of PdSn alloy nanoparticles, and a platinum precursor. The electrochemical activity was evaluated by methanol oxidation. The Pt-PdSn/C catalysts were characterized by transmission electron ...

Preparation of SnSe thin films by encapsulated selenization; Saput tipis SnSe disediakan dengan kaedah penselenidan tertudung-tebat

Energy Technology Data Exchange (ETDEWEB)

Sabar, D Hutagalung [Universitas Sumatera Utara, Medan (Indonesia). Dept. of Physics; Sakrani, Samsudi; Wahab, Yussof [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

1994-12-31

Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system.

Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

Directory of Open Access Journals (Sweden)

Bing-Rui Wu

2014-01-01

Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

Science.gov (United States)

Janicek, Petr; Niang, Kham M.; Mistrik, Jan; Palka, Karel; Flewitt, Andrew J.

2017-11-01

ZnO:Sn thin films were deposited onto thermally oxidized silicon substrates using a remote plasma reactive sputtering. Their optical constants (refractive index n and extinction coefficient k) were determined from ellipsometric data recorded over a wide spectral range (0.05-6 eV). Parametrization of ZnO:Sn complex dielectric permittivity consists of a parameterized semiconductor oscillator function describing the short wavelength absorption edge, a Drude oscillator describing free carrier absorption in near-infrared part of spectra and a Lorentz oscillator describing the long wavelength absorption edge and intra-band absorption in the ultra-violet part of the spectra. Using a Mott-Davis model, the increase in local disorder with increasing Sn doping is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, an increase in the centroid distance of the valence and conduction bands with increasing Sn doping is shown and only slight increase in intensity of the inter-band optical transition due to Sn doping occurs. The Drude model applied in the near-infrared part of the spectra revealed the free carrier concentration and mobility of ZnO:Sn. Results show that the range of transparency of prepared ZnO:Sn layers is not dramatically affected by Sn doping whereas electrical conductivity could be controlled by Sn doping. Refractive index in the transparent part is comparable with amorphous Indium Gallium Zinc Oxide allowing utilization of prepared ZnO:Sn layers as an indium-free alternative.

Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

International Nuclear Information System (INIS)

Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

2014-01-01

Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

Drop Weight Impact Behavior of Al-Si-Cu Alloy Foam-Filled Thin-Walled Steel Pipe Fabricated by Friction Stir Back Extrusion

Science.gov (United States)

Hangai, Yoshihiko; Nakano, Yukiko; Utsunomiya, Takao; Kuwazuru, Osamu; Yoshikawa, Nobuhiro

2017-02-01

In this study, Al-Si-Cu alloy ADC12 foam-filled thin-walled stainless steel pipes, which exhibit metal bonding between the ADC12 foam and steel pipe, were fabricated by friction stir back extrusion. Drop weight impact tests were conducted to investigate the deformation behavior and mechanical properties of the foam-filled pipes during dynamic compression tests, which were compared with the results of static compression tests. From x-ray computed tomography observation, it was confirmed that the fabricated foam-filled pipes had almost uniform porosity and pore size distributions. It was found that no scattering of the fragments of collapsed ADC12 foam occurred for the foam-filled pipes owing to the existence of the pipe surrounding the ADC12 foam. Preventing the scattering of the ADC12 foam decreases the drop in stress during dynamic compression tests and therefore improves the energy absorption properties of the foam.

Nickel foam-supported polyaniline cathode prepared with electrophoresis for improvement of rechargeable Zn battery performance

Science.gov (United States)

Xia, Yang; Zhu, Derong; Si, Shihui; Li, Degeng; Wu, Sen

2015-06-01

Porous nickel foam is used as a substrate for the development of rechargeable zinc//polyaniline battery, and the cathode electrophoresis of PANI microparticles in non-aqueous solution is applied to the fabrication of Ni foam supported PANI electrode, in which the corrosion of the nickel foam substrate is prohibited. The Ni foam supported PANI cathode with high loading is prepared by PANI electrophoretic deposition, and followed by PANI slurry casting under vacuum filtration. The electrochemical charge storage performance for PANI material is significantly improved by using nickel foam substrate via the electrophoretic interlayer. The specific capacity of the nickel foam-PANI electrode with the electrophoretic layer is higher than the composite electrode without the electrophoretic layer, and the specific capacity of PANI supported by Ni foam reaches up to 183.28 mAh g-1 at the working current of 2.5 mA cm-2. The present electrophoresis deposition method plays the facile procedure for the immobilization of PANI microparticles onto the surface of non-platinum metals, and it becomes feasible to the use of the Ni foam supported PANI composite cathode for the Zn/PANI battery in weak acidic electrolyte.

Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells

International Nuclear Information System (INIS)

Avellaneda, David; Delgado, Guadalupe; Nair, M.T.S.; Nair, P.K.

2007-01-01

Chemically deposited SnS thin films possess p-type electrical conductivity. We report a photovoltaic structure: SnO 2 :F-CdS-SnS-(CuS)-silver print, with V oc > 300 mV and J sc up to 5 mA/cm 2 under 850 W/m 2 tungsten halogen illumination. Here, SnO 2 :F is a commercial spray-CVD (Pilkington TEC-8) coating, and the rest deposited from different chemical baths: CdS (80 nm) at 333 K, SnS (450 nm) and CuS (80 nm) at 293-303 K. The structure may be heated in nitrogen at 573 K, before applying the silver print. The photovoltaic behavior of the structure varies with heating: V oc ∼ 400 mV and J sc 2 , when heated at 423 K in air, but V oc decreases and J sc increases when heated at higher temperatures. These photovoltaic structures have been found to be stable over a period extending over one year by now. The overall cost of materials, simplicity of the deposition process, and possibility of easily varying the parameters to improve the cell characteristics inspire further work. Here we report two different baths for the deposition of SnS thin films of about 500 nm by chemical deposition. There is a considerable difference in the nature of growth, crystalline structure and chemical stability of these films under air-heating at 623-823 K or while heating SnS-CuS layers, evidenced in XRF and grazing incidence angle XRD studies. Heating of SnS-CuS films results in the formation of SnS-Cu x SnS y . 'All-chemically deposited photovoltaic structures' involving these materials are presented

Electronic structure and magnetic properties of Ni-doped SnO2 thin films

Science.gov (United States)

Sharma, Mayuri; Kumar, Shalendra; Alvi, P. A.

2018-05-01

This paper reports the electronic structure and magnetic properties of Ni-doped SnO2 thin film which were grown on Si (100) substrate by PLD (pulse laser deposition) technique under oxygen partial pressure (PO2). For getting electronic structure and magnetic behavior, the films were characterized using near edge X-ray absorption fine structure spectroscopy (NEXAFS) and DC magnetization measurements. The NEXAFS study at Ni L3,2 edge has been done to understand the local environment of Ni and Sn ions within SnO2 lattice. DC magnetization measurement shows that the saturation magnetization increases with the increase in substitution of Ni2+ ions in the system.

Thermoelectric effects of amorphous Ga-Sn-O thin film

Science.gov (United States)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Cu2ZnSnS4 thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

International Nuclear Information System (INIS)

Caballero, R.; Izquierdo-Roca, V.; Merino, J.M.; Friedrich, E.J.; Climent-Font, A.; Saucedo, E.; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" >Pérez-Rodríguez, A.; León, M.

2013-01-01

A study of Cu 2 ZnSnS 4 thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu 2 ZnSnS 4 bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu 2 ZnSnS 4 deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu 2 ZnSnS 4 (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells

Photosensitive thin-film In/p-Pb{sub x}Sn{sub 1-x}S Schottky barriers: Fabrication and properties

Energy Technology Data Exchange (ETDEWEB)

Gremenok, V. F., E-mail: gremenok@ifttp.bas-net.by [Scientific-Practical Center of the National Academy of Sciences of Belarus State Scientific and Production Association (Belarus); Rud' , V. Yu., E-mail: rudvas.spb@gmail.com [St. Petersburg State Polytechnic University (Russian Federation); Rud' , Yu. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Bashkirov, S. A.; Ivanov, V. A. [Scientific-Practical Center of the National Academy of Sciences of Belarus State Scientific and Production Association (Belarus)

2011-08-15

Thin Pb{sub x}Sn{sub 1-x}S films are obtained by the 'hot-wall' method at substrate temperatures of 210-330 Degree-Sign C. The microstructure, composition, morphology, and electrical characteristics of films are investigated. On the basis of the obtained films, photosensitive In/p-Pb{sub x}Sn{sub 1-x}S Schottky barriers are fabricated for the first time. The photosensivity spectra of these structures are investigated, and the character of interband transitions and the band-gap values are determined from them. The conclusion is drawn that Pb{sub x}Sn{sub 1-x}S thin polycrystalline films may be used in solar-energy converters.

Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe {111} Topological Crystalline Insulator

Directory of Open Access Journals (Sweden)

Wencan Jin

2017-10-01

Full Text Available Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi_{2}Se_{3} has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111} thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50×10^{6}  m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.

Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

International Nuclear Information System (INIS)

Tsay, C.-Y.; Cheng, H.-C.; Tung, Y.-T.; Tuan, W.-H.; Lin, C.-K.

2008-01-01

In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 deg. C for 10 min and then annealed in air at 500 deg. C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 x 10 2 Ω-cm

Energy-Saving Melting and Revert Reduction Technology (E-SMARRT): Lost Foam Thin Wall - Feasibility of Producing Lost Foam Castings in Aluminum and Magnesium Based Alloys

Energy Technology Data Exchange (ETDEWEB)

Fasoyinu, Yemi [CanmetMATERIALS; Griffin, John A. [University of Alabama - Birmingham

2014-03-31

With the increased emphasis on vehicle weight reduction, production of near-net shape components by lost foam casting will make significant inroad into the next-generation of engineering component designs. The lost foam casting process is a cost effective method for producing complex castings using an expandable polystyrene pattern and un-bonded sand. The use of un-bonded molding media in the lost foam process will impose less constraint on the solidifying casting, making hot tearing less prevalent. This is especially true in Al-Mg and Al-Cu alloy systems that are prone to hot tearing when poured in rigid molds partially due to their long freezing range. Some of the unique advantages of using the lost foam casting process are closer dimensional tolerance, higher casting yield, and the elimination of sand cores and binders. Most of the aluminum alloys poured using the lost foam process are based on the Al-Si system. Very limited research work has been performed with Al-Mg and Al-Cu type alloys. With the increased emphasis on vehicle weight reduction, and given the high-strength-to-weight-ratio of magnesium, significant weight savings can be achieved by casting thin-wall (≤ 3 mm) engineering components from both aluminum- and magnesium-base alloys.

MeV ion irradiation induced evolution of morphological, structural and optical properties of nanostructured SnO2 thin films

International Nuclear Information System (INIS)

Mohapatra, Satyabrata; Bhardwaj, Neha; Pandey, Akhilesh

2015-01-01

Nanostructured SnO 2 thin films were prepared by carbothermal evaporation method. Morphological, structural and optical properties of the SnO 2 thin films, before and after 8 MeV Si ion irradiation to fluences varying from 1 × 10 13 to 1 × 10 15 ions cm −2 , were well characterized using atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), Raman spectroscopy and photoluminescence spectroscopy (PL). XRD studies revealed the presence of SnO 2 and Sn nanoparticles in the as-deposited samples. AFM and FESEM studies on the irradiated samples revealed formation of nanoring-like structures, at a fluence of 1 × 10 15 ions cm −2 , with a central hole and circular rim consisting of nearly monodisperse SnO 2 nanoparticles. PL studies revealed strong enhancement in UV emissions upon 8 MeV Si ion irradiation. A growth mechanism underlying the formation of SnO 2 nanorings involving self-assembly of SnO 2 nanoparticles around nanoholes is tentatively proposed. (paper)

Electrical, optical and etching properties of Zn-Sn-O thin films deposited by combinatorial sputtering

International Nuclear Information System (INIS)

Kim, J. S.; Park, J. K.; Baik, Y. J.; Kim, W. M.; Jeong, J.; Seong, T. Y.

2012-01-01

Zn-Sn-O (ZTO) films are known to be able to form an amorphous phase, which provides a smooth surface morphology as well as etched side wall, when deposited by using the conventional sputtering technique and, therefore, to have a potential to be applied as transparent thin film transistors. In this study, ZTO thin films were prepared by using combined sputtering of ZnO and SnO 2 targets, and the dependences of their electrical and optical properties on the composition and the deposition parameters were examined. The Sn content in the films was varied in the range of 35 ∼ 85 at .%. The deposition was carried out at room temperature, 150 and 300 .deg. C, and the oxygen content in sputtering gas was varied from 0 to 1 vol.%. Sn-rich films had better electrical properties, but showed large oxygen deficiency when deposited at low oxygen partial pressures. ZTO films with Sn contents lower than 55 at.% had good optical transmission, but the electrical properties were poor due to very low carrier concentrations. A high Hall mobility of larger than 10 cm 2 /Vs could be obtained in the carrier density range 10 17 ∼ 10 20 cm -3 , and the etching rate was measurable for films with Sn content up to 70 at.% when using a dilute HCl solution, indicating a good possibility of utilizing ZTO films for device applications.

Copper tin sulfide (CTS) absorber thin films obtained by co-evaporation: Influence of the ratio Cu/Sn

Energy Technology Data Exchange (ETDEWEB)

Robles, V., E-mail: victor.robles@ciemat.es; Trigo, J.F.; Guillén, C.; Herrero, J.

2015-09-05

Highlights: • Copper tin sulfide (CTS) thin films were grown by co-evaporation at different Cu/Sn atomic ratios. • Smooth Cu{sub 2}SnS{sub 3} layers with large grains are obtained at Cu/Sn ⩾ 1.5 and T ⩾ 350 °C. • At 450 °C, the cubic Cu{sub 2}SnS{sub 3} phase changes to tetragonal phase. • Cu{sub 2}SnS{sub 3} presents suitable optical and electrical properties for use as photovoltaic absorbers. - Abstract: Copper tin sulfide thin films have been grown on soda-lime glass substrates from the elemental constituents by co-evaporation. The synthesis was performed at substrate temperatures of 350 °C and 450 °C and different Cu/Sn ratios, adjusting the deposition time in order to obtain thicknesses above 1000 nm. The evolution of the morphological, structural, chemical, optical and electrical properties has been analyzed as a function of the substrate temperature and the Cu/Sn ratio. For the samples with Cu/Sn ⩽ 1, Cu{sub 2}Sn{sub 3}S{sub 7} and Cu{sub 2}SnS{sub 3} have been observed by XRD. Increasing the Cu/Sn to 1.5, the Cu{sub 2}SnS{sub 3} phase was the majority, being the formation completed at Cu/Sn ratio around 2. The increment of the substrate temperature leads to a change of cubic structure to tetragonal of the Cu{sub 2}SnS{sub 3} phase. The chemical treatment with KCN was effective to eliminate CuS excess detected in the samples with Cu/Sn > 2.2. The samples with Cu{sub 2}SnS{sub 3} structure show a band gap energy increasing from 0.9 to 1.25 eV and an electrical resistivity decreasing from 7 ∗ 10{sup −2} Ω cm to 3 ∗ 10{sup −3} Ω cm when the Cu/Sn atomic ratio increases from 1.5 to 2.2.

Growth Structural and Optical Properties of the Thermally Evaporated Tin Diselenide (SnSe2) Thin Films

OpenAIRE

R. Sachdeva1,; M. Sharma1,; A. Devi1,; U. Parihar1,; N. Kumar1,; N. Padha1,; C.J. Panchal

2011-01-01

Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction an...

Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

Science.gov (United States)

Ling, Cuicui; Guo, Tianchao; Lu, Wenbo; Xiong, Ya; Zhu, Lei; Xue, Qingzhong

2017-06-29

The SnO 2 /Si heterojunction possesses a large band offset and it is easy to control the transportation of carriers in the SnO 2 /Si heterojunction to realize high-response broadband detection. Therefore, we investigated the potential of the SnO 2 nanoparticle thin film/SiO 2 /p-Si heterojunction for photodetectors. It is demonstrated that this heterojunction shows a stable, repeatable and broadband photoresponse from 365 nm to 980 nm. Meanwhile, the responsivity of the device approaches a high value in the range of 0.285-0.355 A W -1 with the outstanding detectivity of ∼2.66 × 10 12 cm H 1/2 W -1 and excellent sensitivity of ∼1.8 × 10 6 cm 2 W -1 , and its response and recovery times are extremely short (oxide or oxide/Si based photodetectors. In fact, the photosensitivity and detectivity of this heterojunction are an order of magnitude higher than that of 2D material based heterojunctions such as (Bi 2 Te 3 )/Si and MoS 2 /graphene (photosensitivity of 7.5 × 10 5 cm 2 W -1 and detectivity of ∼2.5 × 10 11 cm H 1/2 W -1 ). The excellent device performance is attributed to the large Fermi energy difference between the SnO 2 nanoparticle thin film and Si, SnO 2 nanostructure, oxygen vacancy defects and thin SiO 2 layer. Consequently, practical highly-responsive broadband PDs may be actualized in the future.

Physical properties of SnS thin films grown by hot wall deposition

International Nuclear Information System (INIS)

Gremenok, V.; Ivanov, V.; Bashkirov, S.; Unuchak, D.; Lazenka, V.; Bente, K.; Tashlykov, I.; Turovets, A.

2010-01-01

Full text : Recently, considerable effort has been invested to gain a better and deeper knowledge of structural and physical properties of metal chalcogenide semiconductors because of their potential application in electrical and photonic devices. Among them, tin sulphide (SnS) has attracted attention because of band gap of 1.3 eV and an absorption coefficient greater than 10 4 cm - 1. Additionally, by using tin sulfide compounds for photovoltaic devices, the production costs are decreased, because these materials are cheap and abundant in nature. For the sythesis of SnS thin films by hot wall deposition, SnS ingots were used as the source materials synthesized from high purity elements (99.999 percent). The thin films were grown onto glass at substrate temperatures between 220 and 380 degrees Celsium. The thickness of the films was in the range of 1.0 - 2.5 μm. The crystal structure and crystalline phases of the materials were studied by XRD using a Siemens D-5000 diffractometer with CuK α (λ = 1.5418 A) radiation. In order to consider instrumental error, the samples were coated by Si powder suspended in acetone. The composition and surface morphology of thin films were investigated by electron probe microanalysis (EPMA) using a CAMECA SX-100, a scanning electron microscope JEOL 6400 and an atomic force microscope (AFM, Model: NT 206), respectively. Depth profiling was performed by Auger electron spectroscopy (AES) using a Perkin Elmer Physical Electronics 590. The electrical resistivity was studied by van der Pauw four-probe technique using silver paste contact. The optical transmittance was carried out using a Varian Cary 50 UV - VIS spectrophotometer in the range 500 - 2000 nm. The as-grown films exhibited a composition with a Sn/S at. percent ratio of 1.06. The AES depth profiles revealed relatively uniform composition through the film thickness. The XRD analysis of the SnS films showed that they were monophase (JCPDS 39-0354), polycrystalline with

MOCVD growth of transparent conducting Cd2SnO4 thin films

International Nuclear Information System (INIS)

Metz, A.W.; Poeppelmeier, K.R.; Marks, T.J.; Lane, M.A.; Kannewurt, C.R.

2004-01-01

The first preparation of transparent conducting Cd 2 SnO 4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa) 2 (TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd 2 SnO 4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Quantum coherent transport in SnTe topological crystalline insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Assaf, B. A.; Heiman, D. [Department of Physics, Northeastern University, Boston, Massachusetts 02115 (United States); Katmis, F.; Moodera, J. S. [Francis Bitter Magnet Laboratory, MIT, Cambridge, Massachusetts 02139 (United States); Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Wei, P. [Department of Physics, MIT, Cambridge, Massachusetts 02139 (United States); Satpati, B. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Zhang, Z. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Bennett, S. P.; Harris, V. G. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

2014-09-08

Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Results of quantum coherent magnetotransport measurements reveal a multiplicity of Dirac surface states that are unique to TCI. Modeling of the weak antilocalization shows variations in the extracted number of carrier valleys that reflect the role of coherent intervalley scattering in coupling different Dirac states on the degenerate TCI surface.

Crystal structure determination of solar cell materials: Cu2ZnSnS4 thin films using X-ray anomalous dispersion

International Nuclear Information System (INIS)

Nozaki, Hiroshi; Fukano, Tatsuo; Ohta, Shingo; Seno, Yoshiki; Katagiri, Hironori; Jimbo, Kazuo

2012-01-01

Highlights: ► Cu 2 ZnSnS 4 thin films as a solar cell material were synthesized. ► The wavelength dependences of the diffraction intensity were measured. ► The crystal structures were clearly identified as kesterite structure for all samples. ► Crystal structure analysis revealed that the atomic compositions were Cu/(Zn + Sn) = 0.97 and Zn/Sn = 1.42 for the sample synthesized using stoichiometric amount of starting materials. - Abstract: The crystal structure of Cu 2 ZnSnS 4 (CZTS) thin films fabricated by vapor-phase sulfurization was determined using X-ray anomalous dispersion. High statistic synchrotron radiation X-ray diffraction data were collected from very small amounts of powder. By analyzing the wavelength dependencies of the diffraction peak intensities, the crystal structure was clearly identified as kesterite. Rietveld analysis revealed that the atomic composition deviated from stoichiometric composition, and the compositions were Cu/(Zn + Sn) = 0.97, and Zn/Sn = 1.42.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.

2014-11-11

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

Optimization of foam-filled bitubal structures for crashworthiness criteria

International Nuclear Information System (INIS)

Zhang, Yong; Sun, Guangyong; Li, Guangyao; Luo, Zhen; Li, Qing

2012-01-01

Highlights: ► The paper aims to optimize foam-filled bitubal squared column for crashworthiness. ► It explores different formulations and configurations of design. ► The optimal foam-filled bitubal column is better than foam-filled monotubal column. ► The optimal foam-filled bitubal column is better than empty bitubal column. -- Abstract: Thin-walled structures have been widely used as key components in automobile and aerospace industry to improve the crashworthiness and safety of vehicles while maintaining overall light-weight. This paper aims to explore the design issue of thin-walled bitubal column structures filled with aluminum foam. As a relatively new filler material, aluminum foam can increase crashworthiness without sacrificing too much weight. To optimize crashworthiness of the foam-filled bitubal square column, the Kriging meta-modeling technique is adopted herein to formulate the objective and constraint functions. The genetic algorithm (GA) and Non-dominated Sorting Genetic Algorithm II (NSGA II) are used to seek the optimal solutions to the single and multiobjective optimization problems, respectively. To compare with other thin-walled configurations, the design optimization is also conducted for empty bitubal column and foam-filled monotubal column. The results demonstrate that the foam-filled bitubal configuration has more room to enhance the crashworthiness and can be an efficient energy absorber.

Multifractal spectra of scanning electron microscope images of SnO2 thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Chen, Z.W.; Lai, J.K.L.; Shek, C.H.

2005-01-01

The concept of fractal geometry has proved useful in describing structures and processes in experimental systems. In this Letter, the surface topographies of SnO 2 thin films prepared by pulsed laser deposition for various substrate temperatures were measured by scanning electron microscope (SEM). Multifractal spectra f(α) show that the higher the substrate temperature, the wider the spectrum, and the larger the Δf(Δf=f(α min )-f(α max )). It is apparent that the nonuniformity of the height distribution increases with the increasing substrate temperature, and the liquid droplets of SnO 2 thin films are formed on previous thin films. These results show that the SEM images can be characterized by the multifractal spectra

Synthesis and characterisation of Cu{sub 2}ZnSnSe{sub 4} thin films prepared via a vacuum evaporation-based route

Energy Technology Data Exchange (ETDEWEB)

Volobujeva, O., E-mail: v.olga@staff.ttu.ee; Bereznev, S.; Raudoja, J.; Otto, K.; Pilvet, M.; Mellikov, E.

2013-05-01

Different sequentially stacked binary chalcogenide layers (CuSe, ZnSe, and SnSe) deposited by vacuum evaporation onto molybdenum covered soda-lime glass substrates were used as precursors to form Cu{sub 2}ZnSnSe{sub 4} films. The influence of the stacked binary layer sequence, substrate temperature, both the duration and speed of deposition and the post deposition treatment atmosphere on the structural and the morphological parameters of the Cu{sub 2}ZnSnSe{sub 4} thin films was studied. Our results indicate the possibility of replacing the Se{sub 2} selenisation with a thermal treatment in an SnSe{sub 2} atmosphere to avoid the selenisation of the Mo substrate and MoSe{sub 2} formation. This SnSe{sub 2} treatment forms p-type Cu{sub 2}ZnSnSe{sub 4} films with an optical band-gap of 1.14 eV and a solar cell structure with an efficiency of up to 3%. - Highlights: ► Cu{sub 2}ZnSnSe{sub 4} thin films were grown using binary precursors and selenisation. ► Composition and morphology were studied in dependence of selenisation atmosphere. ► The use of SnSe{sub 2} selenisation allows to avoid Mo substrate selenisation. ► The high quality of films is indicated by the value of their E{sub g} = 1.14 eV. ► Cu{sub 2}ZnSnSe{sub 4} thin films were in p-type conductivity and were realized as solar cells.

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

Science.gov (United States)

Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

2016-05-01

The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Carbon supported Pd-Sn and Pd-Ru-Sn nanocatalysts for ethanol electro-oxidation in alkaline medium

CSIR Research Space (South Africa)

Modibedi, RM

2011-04-01

Full Text Available Carbon supported Pd-Sn and Pd-Ru-Sn nanocatalysts were prepared by the chemical reduction method, using sodium borohydride and ethylene glycol mixture as the reducing agent. The catalytic activity towards ethanol electro-oxidation in alkaline medium...

Selective Hydrogenation of Biomass-derived Furfural over Supported Ni3Sn2 Alloy: Role of Supports

Directory of Open Access Journals (Sweden)

Rodiansono Rodiansono

2016-03-01

Full Text Available A highly active and selective hydrogenation of biomass-derived furfural into furfuryl alcohol was achieved using supported single phase Ni3Sn2 alloy catalysts. Various supports such as active carbon (AC, g-Al2O3, Al(OH3, ZnO, TiO2, ZrO2, MgO, Li-TN, and SiO2 have been employed in order to understand the role of the support on the formation of Ni3Sn2 alloy phase and its catalytic performance. Supported Ni3Sn2 alloy catalysts were synthesised via a simple hydrothermal treatment of the mixture of aqueous solution of nickel chloride hexahydrate and ethanol solution of tin(II chloride dihydrate in presence of ethylene glycol at 423 K for 24 h followed by H2 treatment at 673 K for 1.5 h, then characterised by using ICP-AES, XRD, H2- and N2-adsorption. XRD profiles of samples showed that the Ni3Sn2 alloy phases are readily formed during hydrothermal processes and become clearly observed at 2θ = 43-44o after H2 treatment. The presence of Ni3Sn2 alloy species that dispersed on the supports is believed to play a key role in highly active and selective hydrogenation of biomass-derived furfural towards furfuryl alcohol. Ni3Sn2 on TiO2 and ZnO supports exhibited much lower reaction temperature to achieved >99% yield of furfuryl alcohol product compared with other supports. The effects of loading amount of Ni-Sn, reaction conditions (temperature and time profile on the activity and selectivity towards the desired product are systematically discussed. Copyright © 2016 BCREC GROUP. All rights reserved Received: 10th November 2015; Revised: 31st December 2015; Accepted: 5th January 2016 How to Cite: Rodiansono, R., Astuti, M.D., Khairi, S., Shimazu, S. (2016. Selective Hydrogenation of Biomass-derived Furfural over Supported Ni3Sn2 Alloy: Role of Supports. Bulletin of Chemical Reaction Engineering & Catalysis, 11 (1: 1-9. (doi:10.9767/bcrec.11.1.393.1-9 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.11.1.393.1-9

Influence of complexing agent (Na2EDTA on chemical bath deposited Cu4SnS4 thin films

Directory of Open Access Journals (Sweden)

Anuar Kassim

2010-08-01

Full Text Available The quality of thin film is influenced by the presence of complexing agents such as Na2EDTA. The Cu4SnS4 thin films were deposited onto indium tin oxide glass substrate by chemical bath deposition method. The structural, morphological and optical properties of the deposited films have been studied using X-ray diffraction, atomic force microscopy and UV-Vis spectrophotometer, respectively. The XRD data showed that the films have a polycrystalline and orthorhombic structure. It also indicated that the most intense peak at 2 θ = 30.2° which belongs to (221 plane of Cu4 SnS4. The film deposited with 0.05 M Na2 EDTA showed good uniformity, good surface coverage with bigger grains and produced higher absorbance value. The band gap energy varies with the variation of Na2EDTA concentration which ranging from 1.56-1.60 eV. Deposition at concentration of 0.05 M Na2EDTA proved to offer a reasonably good Cu4SnS4 thin film.

Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

International Nuclear Information System (INIS)

Bashkirov, S.A.; Gremenok, V.F.; Ivanov, V.A.; Shevtsova, V.V.; Gladyshev, P.P.

2015-01-01

Tin monosulfide SnS raises an interest as a promising material for photovoltaics. The influence of the substrate material on the microstructure and optical properties of SnS thin films with [111] texture obtained by hot wall vacuum deposition on glass, molybdenum and indium tin oxide substrates is reported. The lattice parameters for layers grown on different substrates were determined by X-ray diffraction and their deviations from the data reported in the literature for single α-SnS crystals were discussed. The change in the degree of preferred orientation of the films depending on the substrate material is observed. The direct nature of the optical transitions with the optical band gap of 1.15 ± 0.01 eV is reported. - Highlights: • SnS thin films were hot wall deposited on glass, molybdenum and indium tin oxide. • Physical properties of the films were studied with respect to the substrate type. • The SnS lattice parameter deviations were observed and the explanation was given. • The direct optical transitions with the band gap of 1.15 ± 0.01 eV were observed

Optoelectronic properties of R-F magnetron sputtered Cadmium Tin Oxide (Cd2SnO4) thin films for CdS/CdTe thin film solar cell applications

International Nuclear Information System (INIS)

Jeyadheepan, K.; Thamilselvan, M.; Kim, Kyunghae; Yi, Junsin; Sanjeeviraja, C.

2015-01-01

Highlights: • Characterization of “as-prepared” Cd 2 SnO 4 thin films ideal for thin film solar cells. • Lowest value of resistivity with high mobility attained for the as-prepared Cd 2 SnO 4 films. • Maximum transmittance of 93% in the visible range for the as-prepared films. • Effect of substrate temperature on the scattering mechanism of TCO. - Abstract: The influence of substrate temperature on the microstructural behavior, optical, electrical properties and on the scattering mechanism of charge carriers were studied for the as-prepared radio-frequency (R-F) magnetron sputtered Cadmium Tin Oxide (Cd 2 SnO 4 ) thin films. Films prepared at the substrate temperature of 300 °C were found to be polycrystalline in nature with preferential orientation along (3 1 1) plane. Well pronounced Moss–Burstein shift, in the transmittance spectra with dispersions in the optical band gap from 3.07 to 3.30 eV, was observed at substrate temperatures between 25 and 300 °C. Optical property of high visible transmittance was retained by the films. Analysis of the electrical properties on the prepared crystalline Cd 2 SnO 4 films showed a calculated resistivity of 10 −3 –10 −4 Ω cm, with n-type carrier density in the range of 10 19 –10 20 cm −3 and the charge carrier mobility in the range of 63–30 cm 2 /V s. The effects of structural, compositional and optical properties on the scattering mechanism of charge carrier are elaborated and reported to be an experimental evidence for the theoretical predictions. The results revealed the essential DC electrical conduction behavior, which is ideal for the fabrication of Cd 2 SnO 4 -based CdS/CdTe thin film solar cells

MAPLE deposition and characterization of SnO2 colloidal nanoparticle thin films

International Nuclear Information System (INIS)

Caricato, A P; Martino, M; Romano, F; Tunno, T; Valerini, D; Epifani, M; Rella, R; Taurino, A

2009-01-01

In this paper we report on the deposition and characterization of tin oxide (SnO 2 ) nanoparticle thin films. The films were deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. SnO 2 colloidal nanoparticles with a trioctylphosphine capping layer were diluted in toluene with a concentration of 0.2 wt% and frozen at liquid nitrogen temperature. The frozen target was irradiated with a KrF (248 nm, τ = 20 ns) excimer laser (6000 pulses at 10 Hz). The nanoparticles were deposited on silica (SiO 2 ) and (1 0 0) Si substrates and submitted to morphological (high resolution scanning electron microscopy (SEM)), structural Fourier transform infrared spectroscopy (FTIR) and optical (UV-Vis transmission) characterizations. SEM and FTIR analyses showed that trioctylphosphine was the main component in the as-deposited films. The trioctylphosphine was removed after an annealing in vacuum at 400 0 C, thus allowing to get uniform SnO 2 nanoparticle films in which the starting nanoparticle dimensions were preserved. The energy gap value, determined by optical characterizations, was 4.2 eV, higher than the bulk SnO 2 energy gap (3.6 eV), due to quantum confinement effects.

Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies

International Nuclear Information System (INIS)

Sakhare, R.D.; Khuspe, G.D.; Navale, S.T.; Mulik, R.N.; Chougule, M.A.; Pawar, R.C.; Lee, C.S.; Sen, Shashwati; Patil, V.B.

2013-01-01

Highlights: ► Novel chemical route of synthesis of SnO 2 films. ► Physical properties SnO 2 are influenced by process temperature. ► The room temperature electrical conductivity of SnO 2 is of 10 −7 –10 −5 (Ω cm) −1 . ► SnO 2 exhibit high absorption coefficient (10 4 cm −1 ). -- Abstract: Sol–gel spin coating method has been successfully employed for preparation of nanocrystalline tin oxide (SnO 2 ) thin films. The effect of processing temperature on the structure, morphology, electrical conductivity, thermoelectric power and band gap was studied using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction pattern, atomic force microscopy, two probe technique and UV–visible spectroscopy. X-ray diffraction (XRD) analysis showed that SnO 2 films are crystallized in the tetragonal phase and present a random orientation. Field emission scanning electron microscopy (FESEM) analysis revealed that surface morphology of the tin oxide film consists nanocrystalline grains with uniform coverage of the substrate surface. Transmission electron microscopy (TEM) of SnO 2 film showed nanocrystals having diameter ranging from 5 to 10 nm. Selected area electron diffraction (SAED) pattern confirms tetragonal phase evolution of SnO 2 . Atomic force microscopy (AFM) analysis showed surface morphology of SnO 2 film is smooth. The dc electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10 −7 to 10 −5 (Ω cm) −1 as processing temperature increased from 400 to 700 °C. Thermo power measurement confirms n-type conduction. The band gap energy of SnO 2 film decreased from 3.88 to 3.60 eV as processing temperature increased from 400 to 700 °C

An Investigation of Structural and Electrical Properties of Nano Crystalline SnO2:Cu Thin Films Deposited by Spray Pyrolysis

Directory of Open Access Journals (Sweden)

J. Podder

2011-11-01

Full Text Available Pure tin oxide (SnO2 and Cu doped SnO2 thin films have been deposited onto glass substrates by a simple spray pyrolysis technique under atmospheric pressure at temperature 350 °C. The doping concentration of Cu was varied from 1 to 8 wt. % while all other deposition parameters such as spray rate, carrier air gas pressure, deposition time, and distance between spray nozzle to substrate were kept constant. Surface morphology of the as-deposited thin films has been studied by Scanning Electron Microscopy (SEM. The SEM micrograph of the films shows uniform deposition. The structural properties of the as-deposited and annealed thin films have been studied by XRD and the electrical characterization was performed by Van-der Pauw method. The as-deposited films are found polycrystalline in nature with tetragonal crystal structure. Average grain sizes of pure and Cu doped SnO2 thin film have been obtained in the range of 7.2445 Å to 6.0699 Å, which indicates the nanometric size of SnO2 grains developed in the film. The resistivity of SnO2 films was found to decrease initially from 4.5095×10−4 Ωm to 1.1395× 10−4 Ωm for concentration of Cu up to 4 % but it was increased further with increasing of Cu concentrations. The experimental results depict the suitability of this material for using as transparent and conducting window materials in solar cells and gas sensors.

Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

2016-05-06

Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

SnS absorber thin films by co-evaporation: Optimization of the growth rate and influence of the annealing

Energy Technology Data Exchange (ETDEWEB)

Robles, Víctor, E-mail: victor.robles@ciemat.es; Trigo, Juan Francisco; Guillén, Cecilia; Herrero, José

2015-05-01

Tin sulfide thin films were prepared by co-evaporation on soda-lime glass substrates, for use as absorber layers. The synthesis was carried out at 350 °C substrate temperature and varying the growth rate in the 2-6 Å/s range, adjusting the deposition time in order to obtain thicknesses in the 700-1500 nm range. After evaporation, the samples were heated at 400 °C and 500 °C under various atmospheres. The evolution of the morphological, structural and optical properties has been analyzed as a function of the thickness and deposition rate, before and after annealing. For the samples grown at the lowest rate, SnS and Sn{sub 2}S{sub 3} phase mixing has been observed by X-ray diffraction. Samples with reduced thickness preferably crystallize in the SnS phase, whereas thicker layers become richer in the Sn{sub 2}S{sub 3} phase. The sulfur treatment of samples prepared at the lowest rate results in the formation of SnS{sub 2} phase. Otherwise, the samples obtained at the highest rates show single-phase SnS after heating at 400 °C in sulfur atmosphere, with gap energy values around 1.24 eV. - Highlights: • Tin sulfide thin films were deposited by co-evaporation at different growth rates. • The influence of the growth rate and post-annealing at different conditions was studied. • The SnS phase was obtained by optimizing the growth rate and the annealing process. • The SnS phase presented properties for use as absorber layer.

Sensors of the gas CO in thin film of SnO2:Cu

International Nuclear Information System (INIS)

Tirado G, S.; Sanchez Z, F. E.

2011-10-01

Thin films of SnO 2 :Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO 2 were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO 2 :Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO 2 :Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

Energy Technology Data Exchange (ETDEWEB)

Caballero, R., E-mail: raquel.caballero@uam.es [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Izquierdo-Roca, V. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Merino, J.M.; Friedrich, E.J. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); Climent-Font, A. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain); CMAM, Universidad Autónoma de Madrid, C/Faraday 3, E-28049, Madrid (Spain); Saucedo, E. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); Pérez-Rodríguez, A. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN" 2UB, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain); León, M. [Universidad Autónoma de Madrid, Departamento de Física Aplicada, M12, C/Francisco Tomás y Valiente 7, E-28049 Madrid (Spain)

2013-05-01

A study of Cu{sub 2}ZnSnS{sub 4} thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu{sub 2}ZnSnS{sub 4} bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu{sub 2}ZnSnS{sub 4} deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells.

Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

Science.gov (United States)

Das, Arkaprava; Singh, Fouran

2018-04-01

Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

International Nuclear Information System (INIS)

Lin, Xianzhong; Kavalakkatt, Jaison; Kornhuber, Kai; Levcenko, Sergiu; Lux-Steiner, Martha Ch.; Ennaoui, Ahmed

2013-01-01

Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se 2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu 3 SnS 4 and ZnS NPs and annealing in Ar/H 2 S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu_2ZnSnS_4 thin films

International Nuclear Information System (INIS)

Yu, Ruei-Sung; Hung, Ta-Chun

2016-01-01

Highlights: • Oxygen incorporation in Cu_2ZnSnS_4 changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10"4 to 10"5 cm"−"1. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu_2ZnSnS_4 thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu_2ZnSnS_4 films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu_2ZnSnS_4 film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu_2ZnSnS_4 changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10"4 cm"−"1 to 10"5 cm"−"1. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu_2ZnSnS_4 thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

Compositional Dependence of Optical and Structural Properties of Nanogranular Mixed ZrO2/ZnO/SnO2 Thin Film

Science.gov (United States)

Salari, S.; Ghodsi, F. E.

2018-06-01

A study on the optical properties and photoluminescence (PL) spectra of ternary oxide nanogranular thin films comprising Zr, Zn, and Sn revealed that the change in component ratio could direct the roadmap to improve characteristics of the films. Grazing angle X-ray diffraction analysis showed that incorporation of Sn atoms into the tetragonal structure of Zn/Zr thin film resulted in an amorphous structure. The band gap of film was tunable by precisely controlling the concentration of components. The widening of band gap could correlate to the quantum confinement effect. PL spectra of the composite thin films under excitation at 365 nm showed a sharp red emission with relatively Gaussian line shape, which was intensified in the optimum percentage ratio of 50/30/20. This nearly red emission is attributed to the radiative emission of electrons captured at low-energy traps located near the valence band. An optimum red emission is strongly desirable for use in white LEDs. The comparative study on FTIR spectra of unary, binary, and ternary thin films confirmed successful composition of three different metal oxides in ternary thin films. Detailed investigation on FTIR spectra of ternary compounds revealed that the quenching in PL emission at higher percentage of Sn was originally due to the hydroxyl group.

Characterization of Sn Doped ZnS thin films synthesized by CBD

Energy Technology Data Exchange (ETDEWEB)

Mukherjee, Ayan; Mitra, Partha, E-mail: mitrapartha1@rediffmail.com [Department of Physics, The University of Burdwan, Burdwan (India)

2017-03-15

Zinc sulphide (ZnS) thin film were prepared using chemical bath deposition (CBD) process and tin (Sn) doping was successfully carried out in ZnS. Structural, morphological and microstructural characterization was carried out using XRD, TEM, FESEM and EDX. XRD and SAED pattern confirms presence of hexagonal phase. Rietveld analysis using MAUD software was used for particle size estimation. A constantly decreasing trend in particle size was observed with increasing tin incorporation in ZnS film which was due to enhanced microstrain resulting for tin incorporation. The particle size of prepared hexagonal wurtzite ZnS was around 14-18 nm with average size of ~16.5 nm. The bandgap of the film increases from ~ 3.69 eV for ZnS to ~ 3.90 eV for 5% Sn doped ZnS film which might be due to more ordered hexagonal structure as a result of tin incorporation. Band gap tenability property makes Sn doped ZnS suitable for application in different optoelectronics devices. PL study shows variation of intensity with excitation wavelength and a red shift is noticed for increasing excitation wavelength. (author)

Solution processible Cu{sub 2}SnS{sub 3} thin films for cost effective photovoltaics: Characterization

Energy Technology Data Exchange (ETDEWEB)

Dias, Sandra, E-mail: dias.sandra123@gmail.com; Murali, Banavoth; Krupanidhi, S.B.

2015-11-01

Thin films of Cu{sub 2}SnS{sub 3} (CTS) were deposited by the facile solution processed sol–gel route followed by a low-temperature annealing. The Cu–Sn-thiourea complex formation was analysed using Fourier Transform Infrared spectrophotometer (FTIR). The various phase transformations and the deposition temperature range for the initial precursor solution was determined using Thermogravimetric analysis (TGA) and Differential Scanning Calorimetry (DSC). X-Ray Diffraction (XRD) studies revealed the tetragonal phase formation of the CTS annealed films. Raman spectroscopy studies further confirmed the tetragonal phase formation and the absence of any deterioratory secondary phases. The morphological investigations and compositional analysis of the films were determined using Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) respectively. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 1.3 nm. The absorption coefficient was found to be 10{sup 4} cm{sup −1} and bandgap 1.3 eV which qualifies CTS to be a potential candidate for photovoltaic applications. The refractive index, extinction coefficient and relative permittivity of the film were measured by Spectroscopic ellipsometry. Hall effect measurements, indicated the p type nature of the films with a hole concentration of 2 × 10{sup 18} cm{sup −3}, electrical conductivity of 9 S/cm and a hole mobility of 29 cm{sup 2}/V. The properties of CTS as deduced from the current study, present CTS as a potential absorber layer material for thin film solar cells. - Highlights: • Cu{sub 2}SnS{sub 3} thin films have been synthesized by spin coating of a precursor solution. • The Cu–Sn-thiourea complex precursor was analysed. • The structural, optical and electrical properties of the thin films were studied. • Totally 24 infra-red, 30 optical, 29 Raman and 30 hyper Raman modes are active. • Refractive index, extinction coefficient and relative

Electro-oxidation of methanol and ethanol using PtRu/C, PtSn/C and PtSnRu/C electrocatalysts prepared by an alcohol-reduction process

Science.gov (United States)

Neto, Almir Oliveira; Dias, Ricardo R.; Tusi, Marcelo M.; Linardi, Marcelo; Spinacé, Estevam V.

PtRu/C, PtSn/C and PtSnRu/C electrocatalysts were prepared by the alcohol reduction process using ethylene glycol as the solvent and reduction agent and Vulcan Carbon XC72 as the support. The electrocatalysts were characterized by EDX, XRD and cyclic voltammetry. The electrochemical oxidation of methanol and ethanol were studied by chronoamperometry using a thin porous coating technique. The PtSn/C electrocatalyst prepared by this methodology showed superior performance compared to the PtRu/C and PtSnRu/C electrocatalysts for methanol and ethanol oxidation at room temperature.

Preparation of Cu2Sn3S7 Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

Directory of Open Access Journals (Sweden)

Tai-Hsiang Lui

2015-01-01

Full Text Available Cu2Sn3S7 (CTS can be used as the light absorbing layer for thin-film solar cells due to its good optical properties. In this research, the powder, baking, sulfur, and sintering (PBSS process was used instead of vacuum sputtering or electrochemical preparation to form CTS. During sintering, Cu and Sn powders mixed in stoichiometric ratio were coated to form the thin-film precursor. It was sulfurized in a sulfur atmosphere to form CTS. The CTS film metallurgy mechanism was investigated. After sintering at 500°C, the thin film formed the Cu2Sn3S7 phase and no impurity phase, improving its energy band gap. The interface of CTS film is continuous and the formation of intermetallic compound layer can increase the carrier concentration and mobility. Therefore, PBSS process prepared CTS can potentially be used as a solar cell absorption layer.

Impact of additional sulphur on structure, morphology and optical properties of SnS thin films by thermal evaporation

Science.gov (United States)

Banotra, Arun; Padha, Naresh; Kumar, Shiv; Kapoor, Ashok K.

2018-05-01

Thin films of SnS have been obtained from Sn and S powders which were mixed up using ball mill technique with and without evaporating additional sulphur prior to annealing at 523K. The obtained samples were taken for structural, optical, chemical and morphological studies. The X-ray diffraction reveals the formation of SnS phase on annealing in vacuum having S/Sn ratio of 0.67 obtained from EDAX. This deficit in `S' is removed by supplementing additional `S' of 200nm prior to annealing which results in the S/Sn ratio of 1.01. The optical transmission recorded from spectrophotometer used to study different optical parameters. Morphological results corroborate well with the XRD, EDAX and optical study. The obtained stoichiometric films were also tested for Ag/p-SnS Schottky diodes on In coated glass substrates using current voltage measurements.

Fully transparent thin-film transistor devices based on SnO2 nanowires.

Science.gov (United States)

Dattoli, Eric N; Wan, Qing; Guo, Wei; Chen, Yanbin; Pan, Xiaoqing; Lu, Wei

2007-08-01

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.

Growth of highly textured SnS on mica using an SnSe buffer layer

International Nuclear Information System (INIS)

Wang, S.F.; Fong, W.K.; Wang, W.; Surya, C.

2014-01-01

We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer. - Highlights: • A record low rocking curve FWHM for deposited SnS on mica • Investigation of the nucleation of SnS on mica using the interface model • Investigation of nucleation mechanism by phi-scan measurement • Grain boundary formation from crystallites of various nucleation orientations • Suppression of nucleation orientations using an SnSe buffer layer

Morphology, composition and electrical properties of SnO{sub 2}:Cl thin films grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Cheng, Hsyi-En, E-mail: sean@mail.stust.edu.tw; Wen, Chia-Hui; Hsu, Ching-Ming [Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan (China)

2016-01-15

Chlorine doped SnO{sub 2} thin films were prepared using atomic layer deposition at temperatures between 300 and 450 °C using SnCl{sub 4} and H{sub 2}O as the reactants. Composition, structure, surface morphology, and electrical properties of the as-deposited films were examined. Results showed that the as-deposited SnO{sub 2} films all exhibited rutile structure with [O]/[Sn] ratios between 1.35 and 1.40. The electrical conductivity was found independent on [O]/[Sn] ratio but dependent on chlorine doping concentration, grain size, and surface morphology. The 300 °C-deposited film performed a higher electrical conductivity of 315 S/cm due to its higher chlorine doping level, larger grain size, and smoother film surface. The existence of Sn{sup 2+} oxidation state was demonstrated to minimize the effects of chlorine on raising the electrical conductivity of films.

Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

Directory of Open Access Journals (Sweden)

Samia Ahmed Nadi

2014-01-01

Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

Influence of deposition parameters and annealing on Cu2ZnSnS4 thin films grown by SILAR

International Nuclear Information System (INIS)

Patel, Kinjal; Shah, Dimple V.; Kheraj, Vipul

2015-01-01

Highlights: • Optimisation of Cu 2 ZnSnS 4 (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu 2 ZnSnS 4 (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur

Spray-coated ligand-free Cu2ZnSnS4 nanoparticle thin films

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Murthy, Swathi; Kofod, Guggi

We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user- and environ......We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user......- and environmentally-friendly alkali metal chloride salts can be directly dissolved in controllable amounts. The homogeneous distribution of alkali metals in the ink allows uniform grain growth within the deposited absorber layer as a result of liquid phase assisted sintering. We find that particularly beneficial...... as an unquantifiable amount of ZnS. A Sono-tek spray-coating system is used which utilizes ultrasonic atomization. We investigate the effect of different binders, ink concentration, and spray-coating conditions, i.e. spray power, flow rate from syringe pump, distance between spray nozzle and the substrate, and time...

Electro-oxidation of methanol and ethanol using PtRu/C, PtSn/C and PtSnRu/C electrocatalysts prepared by an alcohol-reduction process

Energy Technology Data Exchange (ETDEWEB)

Neto, Almir Oliveira; Dias, Ricardo R.; Tusi, Marcelo M.; Linardi, Marcelo; Spinace, Estevam V. [Instituto de Pesquisas Energeticas e Nucleares, IPEN-CNEN/SP, Av. Prof. Lineu Prestes 2242, Cidade Universitaria, CEP 05508-900 Sao Paulo, SP (Brazil)

2007-03-30

PtRu/C, PtSn/C and PtSnRu/C electrocatalysts were prepared by the alcohol reduction process using ethylene glycol as the solvent and reduction agent and Vulcan Carbon XC72 as the support. The electrocatalysts were characterized by EDX, XRD and cyclic voltammetry. The electrochemical oxidation of methanol and ethanol were studied by chronoamperometry using a thin porous coating technique. The PtSn/C electrocatalyst prepared by this methodology showed superior performance compared to the PtRu/C and PtSnRu/C electrocatalysts for methanol and ethanol oxidation at room temperature. (author)

Conductive framework supported high rate performance of SnO2 hollow nanofibers for lithium battery anodes

International Nuclear Information System (INIS)

Pham-Cong, De; Kim, Ji Yoon; Park, Jung Soo; Kim, Jae Hyun; Kim, Jong-Pil; Jeong, Euh-Duck; Kim, Jinwoo; Jeong, Se-Young; Cho, Chae-Ryong

2015-01-01

We synthesized an electrospun SnO 2 hollow nanofibers (SnO 2 hNFs) coated with carbon and wrapped with graphene oxide layer by simple hydrothermal and electrostatic force method, respectively. Thin carbon layer as electrolyte blocking layer was formed on the SnO 2 hNFs by using glucose as a carbon source (SnO 2 @C hNFs). Also, layers of graphene oxide are wrapped on SnO 2 @C hNFs by the electrostatic interaction force (SnO 2 @C@G hNFs). At high C rate, the average capacity of the SnO 2 @C@G hNFs still kept high capacity comparing with the SnO 2 hNFs and SnO 2 @C hNFs and then increased above 250% at 3 C. It also exhibits a greatly enhanced synergic effect with an extremely high lithium storage capability up to 1,600 mA h g −1 and kept 900 mA h g −1 after 50 cycles benefiting from the advanced structural features

Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors

Energy Technology Data Exchange (ETDEWEB)

Araki, Hideaki; Kubo, Yuki; Jimbo, Kazuo; Maw, Win Shwe; Katagiri, Hironori; Yamazaki, Makoto; Oishi, Koichiro; Takeuchi, Akiko [Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, Niigata 940-8532 (Japan)

2009-05-15

Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were prepared by sulfurization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were deposited on Mo-coated glass substrates in a one-step process from an electrolyte containing copper (II) sulfate pentahydrate, zinc sulfate heptahydrate, tin (II) chloride dehydrate and tri-sodium citrate dehydrate. The precursors were sulfurized by annealing with sulfur at temperatures of 580 C and 600 C in an N{sub 2} atmosphere. X-ray diffraction peaks attributable to CZTS were detected in the sulfurized films. Photovoltaic cells with the structure glass/Mo/CZTS/ CdS/ZnO:Al/Al were fabricated using the CZTS films by sulfurizing the electrodeposited precursors. The best photovoltaic cell performance was obtained with Zn-rich samples. An open-circuit voltage of 540 mV, a short-circuit current of 12.6 mA/cm{sup 2} and an efficiency of 3.16% were achieved. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation of Mild Steel Thin-Wall Tubes in Unfilled and Foam-Filled Triangle, Square, and Hexagonal Cross Sections Under Compression Load

Science.gov (United States)

Rajak, Dipen Kumar; Kumaraswamidhas, L. A.; Das, S.

2018-02-01

This study has examined proposed structures with mild steel-reinforced LM30 aluminum (Al) alloy having diversely unfilled and 10 wt.% SiCp composite foam-filled tubes for improving axial compression performance. This class of material has novel physical, mechanical, and electrical properties along with low density. In the present experiment, Al alloy foams were prepared by the melt route technique using metal hydride powder as a foaming agent. Crash energy phenomena for diverse unfilled and foam-filled in mild steel thin-wall tubes (triangular, square and hexagonal) were studied as well. Compression deformation investigation was conducted at strain rates of 0.001-0.1/s for evaluating specific energy absorption (SEA) under axial loading conditions. The results were examined to measure plateau stress, maximum densification strain, and deformation mechanism of the materials. Specific energy absorption and total energy absorption capacities of the unfilled and filled sections were determined from the compressive stress-strain curves, which were then compared with each other.

Electrostatic spray deposition of porous SnO₂/graphene anode films and their enhanced lithium-storage properties.

Science.gov (United States)

Jiang, Yinzhu; Yuan, Tianzhi; Sun, Wenping; Yan, Mi

2012-11-01

Porous SnO₂/graphene composite thin films are prepared as anodes for lithium ion batteries by the electrostatic spray deposition technique. Reticular-structured SnO₂ is formed on both the nickel foam substrate and the surface of graphene sheets according to the scanning electron microscopy (SEM) results. Such an assembly mode of graphene and SnO₂ is highly beneficial to the electrochemical performance improvement by increasing the electrical conductivity and releasing the volume change of the anode. The novel engineered anode possesses 2134.3 mA h g⁻¹ of initial discharge capacity and good capacity retention of 551.0 mA h g⁻¹ up to the 100th cycle at a current density of 200 mA g⁻¹. This anode also exhibits excellent rate capability, with a reversible capacity of 507.7 mA h g⁻¹ after 100 cycles at a current density of 800 mA g⁻¹. The results demonstrate that such a film-type hybrid anode shows great potential for application in high-energy lithium-ion batteries.

Thin film solar cells from earth abundant materials growth and characterization of Cu2(ZnSn)(SSe)4 thin films and their solar cells

CERN Document Server

Kodigala, Subba Ramaiah

2013-01-01

The fundamental concept of the book is to explain how to make thin film solar cells from the abundant solar energy materials by low cost. The proper and optimized growth conditions are very essential while sandwiching thin films to make solar cell otherwise secondary phases play a role to undermine the working function of solar cells. The book illustrates growth and characterization of Cu2ZnSn(S1-xSex)4 thin film absorbers and their solar cells. The fabrication process of absorber layers by either vacuum or non-vacuum process is readily elaborated in the book, which helps for further developm

P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

KAUST Repository

Al-Jawhari, Hala A.

2013-10-09

P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

Annealing of RF-magnetron sputtered SnS{sub 2} precursors as a new route for single phase SnS thin films

Energy Technology Data Exchange (ETDEWEB)

Sousa, M.G., E-mail: martasousa@ua.pt [AIN, I3N and Departamento de Física, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Cunha, A.F. da, E-mail: antonio.cunha@ua.pt [AIN, I3N and Departamento de Física, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Fernandes, P.A., E-mail: pafernandes@ua.pt [AIN, I3N and Departamento de Física, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Departamento de Física, Instituto Superior de Engenharia do Porto, Instituto Politécnico do Porto, Rua Dr. António Bernardino de Almeida 431, 4200-072 Porto (Portugal)

2014-04-01

Tin sulphide thin films have been grown on soda-lime glass substrates through the annealing of RF-magnetron sputtered SnS{sub 2} precursors. Three different approaches to the annealing were compared and the resulting films thoroughly studied. One series of precursors was annealed in a tubular furnace directly exposed to a flux of sulphur vapour plus forming gas, N{sub 2} + 5%H{sub 2}, and at a constant pressure of 500 mbar. The other two series of identical precursors were annealed in the same furnace but inside a graphite box with and without elemental sulphur evaporation again in the presence of N{sub 2} + 5%H{sub 2} and at the same pressure as for the sulphur flux experiments. Different maximum annealing temperatures for each set of samples, in the range of 300–570 °C, were tested to study their effects on the properties of the final films. The resulting phases were structurally investigated by X-Ray Diffraction (XRD) and Raman spectroscopy. Annealing of SnS{sub 2} precursors in sulphur flux produced films where SnS{sub 2} was dominant for temperatures up to 480 °C. Increasing the temperature to 530 °C and 570 °C led to films where the dominant phase became Sn{sub 2}S{sub 3}. Annealing of SnS{sub 2} precursors in a graphite box with sulphur vapour at temperatures in the range between 300 °C and 480 °C the films are multi-phase, containing Sn{sub 2}S{sub 3}, SnS{sub 2} and SnS. For high annealing temperatures of 530 °C and 570 °C the films have SnS as the dominant phase. Annealing of SnS{sub 2} precursors in a graphite box without sulphur vapour at 300 °C and 360 °C the films are essentially amorphous, at 420 °C SnS{sub 2} is the dominant phase. For temperatures of 480 °C and 530 °C SnS is the dominant phase but also same residual SnS{sub 2} and Sn{sub 2}S{sub 3} phases are observed. For annealing at 570 °C, according to the XRD results the films appear to be single phase SnS. The composition was studied using energy dispersive spectroscopy being

Implantation of cobalt in SnO2 thin films studied by TDPAC

Directory of Open Access Journals (Sweden)

Juliana Schell

2017-05-01

Full Text Available Here we report time differential perturbed angular correlation (TDPAC results of Co-doped SnO2 thin films. Making use of stable Co and radioactive 111In implanted at the Bonn Radioisotope Separator with energies of 80 keV and 160 keV, respectively, it was possible to study the dopant incorporation and its lattice location during annealing. The hyperfine parameters have been probed as a function of temperature in vacuum. Two quadrupole interactions were observed. At high temperatures the dominant fraction for the probe nuclei can be assigned to the Cd-incorporation at the cation substitutional site in a highly disordered structure, obtained after implantation, to high crystallinity for the measurements at 873 K and 923 K. The similarity in TDPAC spectra obtained in undoped SnO gives indirect evidence that In and Co diffuse to different depths during the annealing process. Other interpretations will be discussed.

Preparation of n-type semiconductor SnO2 thin films

International Nuclear Information System (INIS)

Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

2013-01-01

We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films

International Nuclear Information System (INIS)

Ko, J.H.; Kim, I.H.; Kim, D.; Lee, K.S.; Lee, T.S.; Jeong, J.-H.; Cheong, B.; Baik, Y.J.; Kim, W.M.

2006-01-01

Amorphous Zn-Sn-O (ZTO) thin films with relative Zn contents (= [at.% Zn]/([at.% Zn] + [at.% Sn])) of 0, 0.08 and 0.27 were fabricated by co-sputtering of SnO 2 and ZnO targets at room temperature. Changes in structural, electrical and optical properties together with electron transport properties were examined upon post-annealing treatment in the temperature range from 200 to 600 deg. C in vacuum and in air. Characterization by XRD showed that an amorphous ZTO thin film crystallized at higher temperatures with increasing Zn content. Crystallized ZTO films with a relative Zn content of 0.27 might not contain a single SnO 2 phase which is observed in the films of the other compositions. Amorphous ZTO films showed decreasing electrical resistivities with increasing annealing temperature, having a minimum value of 1 x 10 - 3 Ω cm. Upon crystallization, the resistivities increased drastically, which was attributed to poor crystallinity of the crystallized films. All the ZTO films were found to be degenerate semiconductors with non-parabolic conduction bands having effective masses varying from 0.15 to 0.3 in the carrier concentration range of 6 x 10 18 to 2 x 10 2 cm - 3 . As for a ZTO film with a relative Zn content of 0.27, the degree of non-parabolicity was much lower compared with films of the other compositions, leading to a relatively stable mobility over a wide range of carrier concentration

A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

International Nuclear Information System (INIS)

Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

2010-01-01

This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

Electrical and optical properties of thin films with a SnS{sub 2} - Bi{sub 2}S{sub 3} alloy grown by sulphurization

Energy Technology Data Exchange (ETDEWEB)

Dussan, A; Mesa, F; Gordillo, G [Departamento de Fisica, Universidad Nacional de Colombia, Bogota Cr.30 No 45-03 (Colombia); Botero, M, E-mail: ggordillog@unal.edu.c, E-mail: adussanc@unal.edu.c [Departamento de Fisica, Universidad Central, Bogota Cr.5 No 21A-03 (Colombia)

2009-05-01

In this work, thin films of SnS{sub 2} with increased Bi content were grown by sulphurization of a thin film of Sn:Bi alloy, at temperatures around 300{sup 0}C. The effect of the Bi concentration on the optical, electrical and structural properties was determined through measurements of spectral transmittance, conductivity and x-ray diffraction XRD respectively. It was found that the optical constants (refractive index n, absorption coefficient alpha and energy gap Eg) and the electrical conductivity are significantly affected by the Bi concentration. In particular, a variation of the energy gap between 1.44 and 1.63 eV and a change of the conductivity greater than three orders of magnitude were observed when the content of Bi in the Sn:Bi alloy varied between 0 and 100 %. The analysis of the XRD measurements allowed us to find that the SnS: Bi films grow with a mixture of the SnS{sub 2} and Bi{sub 2}S{sub 3} phases, independently of the Bi content.

Synthesis of Pt{sub 75}Sn{sub 25}/SnO{sub 2}/CNT nanoscaled electrode: Low onset potential of ethanol electrooxidation

Energy Technology Data Exchange (ETDEWEB)

Tabet-Aoul, Amel [Institut National de la Recherche Scientifique (INRS)-Énergie, Matériaux et Télécommunications (EMT), 1650 Boulevard Lionel Boulet, Varennes, Québec, Canada J3X 1S2 (Canada); Mohamedi, Mohamed, E-mail: mohamedi@emt.inrs.ca [Institut National de la Recherche Scientifique (INRS)-Énergie, Matériaux et Télécommunications (EMT), 1650 Boulevard Lionel Boulet, Varennes, Québec, Canada J3X 1S2 (Canada)

2013-03-15

Highlights: ► A pulsed laser synthesis is used for the deposition of Pt, SnO{sub 2} and PtSn alloy thin films onto carbon nanotubes. ► These nanoscaled materials were characterized by FESEM, TEM, XRD and XPS. ► Enhanced electrocatalytic properties toward ethanol oxidation. -- Abstract: With the objective of lowering the potential oxidation of ethanol at PtSn nanocatalyst, we present the synthesis of free-standing catalyst layer comprising a current collector/carbon nanotubes (catalyst support)/SnO{sub 2}/Pt{sub 75}Sn{sub 25} (catalyst) nanostructured layers, each layer constructed upon the one below it. The CNTs are grown by chemical vapor deposition (CVD), whereas SnO{sub 2} and Pt{sub 75}Sn{sub 25} are synthesized by pulsed laser deposition and cross-beam laser deposition, respectively. FESEM revealed that Pt{sub 75}Sn{sub 25} nanoparticles assemble into cauliflower-like arrangement. TEM and HR-TEM showed that the Pt{sub 75}Sn{sub 25} layer thickness is of ca. 25 nm with a particle mean diameter of 4.3 nm. It was found that addition of SnO{sub 2} to Pt{sub 75}Sn{sub 25} promotes significantly the oxidation of ethanol at Pt{sub 75}Sn{sub 25} nanoparticles relative to a carbon nanotubes support. Indeed, the electrooxidation of ethanol at CNTs/SnO{sub 2}/Pt{sub 75}Sn{sub 25} electrode starts at about 100 mV negative with respect to that at CNT/Pt{sub 75}Sn{sub 25}. This decreased overpotential required to oxidize ethanol is very significant and has profound implications to developing high performing anodes for direct ethanol fuel cells technology.

Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

Science.gov (United States)

Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

2018-03-01

Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

Science.gov (United States)

Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-08-16

A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

Influences of oxygen incorporation on the structural and optoelectronic properties of Cu{sub 2}ZnSnS{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Yu, Ruei-Sung, E-mail: rsyu@asia.edu.tw [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China); Department of Medical Research, China Medical University Hospital, China Medical University, Taichung 40402, Taiwan (China); Hung, Ta-Chun [Department of Photonics and Communication Engineering, Asia University, 500, Lioufeng Rd., Wufeng, Taichung 41354, Taiwan (China)

2016-02-28

Highlights: • Oxygen incorporation in Cu{sub 2}ZnSnS{sub 4} changes the energy band structure. • The material has a comparatively high-absorptive capacity for short wavelength. • Absorption coefficients of the film increase from 10{sup 4} to 10{sup 5} cm{sup −1}. • The oxygen-containing CZTS film has a mixture of crystallite and crystalline states. • The material could be a candidate as an absorber layer in multi-junction solar cells. - Abstract: This study used the sol–gel method to prepare Cu{sub 2}ZnSnS{sub 4} thin films containing oxygen and explored the composition, structural, and optoelectronic properties of the films. The non-vacuum process enabled the oxygen content of the Cu{sub 2}ZnSnS{sub 4} films to be 8.89 at% and 10.30 at% for two different annealing conditions. In the crystal structure, oxygen was substituted at the positions of sulfur and appeared in the interstitial sites of the lattice. The compositions of the thin films deviated from the stoichiometric ratio. Both films had kesterite structures with no secondary phase structure. The kesterite CZTS film possessed a composite microstructure of crystallite and crystalline states. The microstructure of the Cu{sub 2}ZnSnS{sub 4} film with higher oxygen content was denser and the average grain size was smaller. Incorporating oxygen atoms into crystalline Cu{sub 2}ZnSnS{sub 4} changed the energy band structure: the direct energy band gaps were, respectively, 2.75 eV and 2.84 eV; the thin films mainly adsorbed photons with wavelengths less than 500 nm; and the absorption coefficients increased from 10{sup 4} cm{sup −1} to 10{sup 5} cm{sup −1}. The films had a comparatively high absorptive capacity for photons less than 350 nm. Increasing the oxygen content of the film lowered the resistivity. Thus, the oxygen-containing Cu{sub 2}ZnSnS{sub 4} thin film could be a candidate for the p-type absorber layer material required in multi-junction solar cells.

Refractive index extraction and thickness optimization of Cu2ZnSnSe4 thin film solar cells

NARCIS (Netherlands)

ElAnzeery, H.; El Daif, O.; Buffière, M.; Oueslati, S.; Ben Messaoud, K.; Agten, D.; Brammertz, G.; Guindi, R.; Kniknie, B.; Meuris, M.; Poortmans, J.

2015-01-01

Cu2nSnSe4 (CZTSe) thin film solar cells are promising emergent photovoltaic technologies based on low-bandgap absorber layer with high absorption coefficient. To reduce optical losses in such devices and thus improve their efficiency, numerical simulations of CZTSe solar cells optical

Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application

Science.gov (United States)

Patel, Biren; Waldiya, Manmohansingh; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

We report the fabrication of Cu2SnS3 (CTS) thin films by a non-vacuum and low cost spray pyrolysis technique. Annealing of the as-deposited film in the sulphur atmosphere produces highly stoichiometric, granular and crystalline CTS phase. The CTS thin films shows direct optical band gap of 1.58 eV with high absorption coefficient of 105 cm-1. Hall measurement shows the carrier concentration of the order of 1021 cm-3 and a favourable resistivity of 10-3 Ω cm. A solar cell architecture of Glass/FTO/CTS/CdS/Al:ZnO/Al was fabricated and its current-voltage characteristic shows an open circuit voltage, short circuit current density and fill-factor of 12.6 mV, 20.2 µA/cm2 and 26% respectively. A further improvement in the solar cell parameters is underway.

Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

Science.gov (United States)

Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

2018-04-01

The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

Preparation and structural characterization of SnO2 and GeO2 methanol steam reforming thin film model catalysts by (HR)TEM

International Nuclear Information System (INIS)

Lorenz, Harald; Zhao Qian; Turner, Stuart; Lebedev, Oleg I.; Van Tendeloo, Gustaaf; Kloetzer, Bernhard; Rameshan, Christoph; Penner, Simon

2010-01-01

Structure, morphology and composition of different tin oxide and germanium oxide thin film catalysts for the methanol steam reforming (MSR) reaction have been studied by a combination of (high-resolution) transmission electron microscopy, selected area electron diffraction, dark-field imaging and electron energy-loss spectroscopy. Deposition of the thin films on NaCl(0 0 1) cleavage faces has been carried out by thermal evaporation of the respective SnO 2 and GeO 2 powders in varying oxygen partial pressures and at different substrate temperatures. Preparation of tin oxide films in high oxygen pressures (10 -1 Pa) exclusively resulted in SnO phases, at and above 473 K substrate temperature epitaxial growth of SnO on NaCl(0 0 1) leads to well-ordered films. For lower oxygen partial pressures (10 -3 to 10 -2 Pa), mixtures of SnO and β-Sn are obtained. Well-ordered SnO 2 films, as verified by electron diffraction patterns and energy-loss spectra, are only obtained after post-oxidation of SnO films at temperatures T ≥ 673 K in 10 5 Pa O 2 . Preparation of GeO x films inevitably results in amorphous films with a composition close to GeO 2 , which cannot be crystallized by annealing treatments in oxygen or hydrogen at temperatures comparable to SnO/SnO 2 . Similarities and differences to neighbouring oxides relevant for selective MSR in the third group of the periodic system (In 2 O 3 and Ga 2 O 3 ) are also discussed with the aim of cross-correlation in formation of nanomaterials, and ultimately, also catalytic properties.

Growth of Cu2ZnSnS4(CZTS) by Pulsed Laser Deposition for Thin film Photovoltaic Absorber Material

Science.gov (United States)

Nandur, Abhishek; White, Bruce

2014-03-01

CZTS (Cu2ZnSnS4) has become the subject of intense interest because it is an ideal candidate absorber material for thin-film solar cells with an optimal band gap (1.5 eV), high absorption coefficient (104 cm-1) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since thin films are deposited under high vacuum with excellent stoichiometry transfer from the target. CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of laser energy fluence and substrate temperature and post-deposition sulfur annealing on the surface morphology, composition and optical absorption have been investigated. Optimal CZTS thin films exhibited a band gap of 1.54 eV with an absorption coefficient of 4x104cm-1. A solar cell utilizing PLD grown CZTS with the structure SLG/Mo/CZTS/CdS/ZnO/ITO showed a conversion efficiency of 5.85% with Voc = 376 mV, Jsc = 38.9 mA/cm2 and Fill Factor, FF = 0.40.

Structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin film absorbers from ZnS and Cu{sub 3}SnS{sub 4} nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Lin, Xianzhong, E-mail: lin.xianzhong@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kavalakkatt, Jaison [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Kornhuber, Kai; Levcenko, Sergiu [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Ennaoui, Ahmed, E-mail: ennaoui@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

2013-05-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se{sub 2} due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu{sub 3}SnS{sub 4} and ZnS NPs and annealing in Ar/H{sub 2}S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy.

Foam patterns

Science.gov (United States)

Chaudhry, Anil R; Dzugan, Robert; Harrington, Richard M; Neece, Faurice D; Singh, Nipendra P; Westendorf, Travis

2013-11-26

A method of creating a foam pattern comprises mixing a polyol component and an isocyanate component to form a liquid mixture. The method further comprises placing a temporary core having a shape corresponding to a desired internal feature in a cavity of a mold and inserting the mixture into the cavity of the mold so that the mixture surrounds a portion of the temporary core. The method optionally further comprises using supporting pins made of foam to support the core in the mold cavity, with such pins becoming integral part of the pattern material simplifying subsequent processing. The method further comprises waiting for a predetermined time sufficient for a reaction from the mixture to form a foam pattern structure corresponding to the cavity of the mold, wherein the foam pattern structure encloses a portion of the temporary core and removing the temporary core from the pattern independent of chemical leaching.

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

International Nuclear Information System (INIS)

Korhonen, E; Prozheeva, V; Tuomisto, F; Bierwagen, O; Speck, J S; White, M E; Galazka, Z; Liu, H; Izyumskaya, N; Avrutin, V; Özgür, Ü; Morkoç, H

2015-01-01

We present positron annihilation results on Sb-doped SnO 2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO 2 the concentrations appear too low to cause significant compensation. (invited article)

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Science.gov (United States)

Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-02-01

We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

Ethanol electrooxidation on novel carbon supported Pt/SnOx/C catalysts with varied Pt:Sn ratio

International Nuclear Information System (INIS)

Jiang, L.; Colmenares, L.; Jusys, Z.; Sun, G.Q.; Behm, R.J.

2007-01-01

Novel carbon supported Pt/SnO x /C catalysts with Pt:Sn atomic ratios of 5:5, 6:4, 7:3 and 8:2 were prepared by a modified polyol method and characterized with respect to their structural properties (X-ray diffraction (XRD) and transmission electron microscopy (TEM)), chemical composition (XPS), their electrochemical properties (base voltammetry, CO ad stripping) and their electrocatalytic activity and selectivity for ethanol oxidation (ethanol oxidation reaction (EOR)). The data show that the Pt/SnO x /C catalysts are composed of Pt and tin oxide nanoparticles with an average Pt particle diameter of about 2 nm. The steady-state activity of the Pt/SnO x /C catalysts towards the EOR decreases with tin content at room temperature, but increases at 80 deg. C. On all Pt/SnO x /C catalysts, acetic acid and acetaldehyde represent dominant products, CO 2 formation contributes 1-3% for both potentiostatic and potentiodynamic reaction conditions. With increasing potential, the acetaldehyde yield decreases and the acetic acid yield increases. The apparent activation energies of the EOR increase with tin content (19-29 kJ mol -1 ), but are lower than on Pt/C (32 kJ mol -1 ). The somewhat better performance of the Pt/SnO x /C catalysts compared to alloyed PtSn x /C catalysts is attributed to the presence of both sufficiently large Pt ensembles for ethanol dehydrogenation and C-C bond splitting and of tin oxide for OH generation. Fuel cell measurements performed for comparison largely confirm the results obtained in model studies

Growth and characterization of tin disulfide (SnS2) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique

International Nuclear Information System (INIS)

Deshpande, N.G.; Sagade, A.A.; Gudage, Y.G.; Lokhande, C.D.; Sharma, Ramphal

2007-01-01

Thin films of tin disulfide (SnS 2 ) have been deposited by using low cost successive ionic layer adsorption and reaction (SILAR) technique. The deposition parameters such as SILAR cycles (60), immersion time (20 s), rinsing time (10 s) and deposition temperature (27 o C) were optimized to obtain good quality of films. Physical investigations were made to study the structural, optical and electrical properties. X-ray diffraction (XRD) patterns reveal that the deposited SnS 2 thin films have hexagonal crystal structure. Energy dispersive X-ray analysis (EDAX) indicated elemental ratio close to those for tin disulfide (SnS (2.02) ). Uniform deposition of the material over the entire glass substrate was revealed by scanning electron microscopy (SEM). Atomic force microscopy (AFM) showed the film is uniform and the substrate surface is well covered with small spherical grains merged in each other. A direct band gap of 2.22 eV was obtained. Photoluminescence (PL) showed two strong peaks corresponding to green and red emission. Ag/SnS 2 junction showed Schottky diode like I-V characteristics. The barrier height calculated was 0.22 eV. Thermoelectric power (TEP) properties showed that tin disulfide exhibits n-type conductivity

Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

Science.gov (United States)

Tracy, Brian D.; Li, Xiang; Liu, Xinyu; Furdyna, Jacek; Dobrowolska, Margaret; Smith, David J.

2016-11-01

Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe// [ 1 1 bar 0 ] GaAs, while the diselenide films were consistent with the Space Group P 3 bar m1 , and had the epitaxial growth relationship [ 2 1 bar 1 bar 0 ]SnSe2// [ 1 1 bar 0 ] GaAs.

Morphology and gas sensing properties of as-deposited and thermally treated doped thin SnO{sub x} layers

Energy Technology Data Exchange (ETDEWEB)

Georgieva, B; Pirov, J; Podolesheva, I [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria); Nihtianova, D, E-mail: biliana@clf.bas.b [Central Laboratory of Mineralogy and Crystallography, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.107, 1113 Sofia (Bulgaria)

2010-04-01

Thin layers intended for gas sensors are prepared by vacuum co-evaporation of TeO{sub 2} and Sn. The as-deposited layers consist of a nanosized oxide matrix and finely dispersed dopants (Te, Sn, TeO{sub 2} or SnTe, depending on the atomic ratio R{sub Sn/Te}). In order to improve the characteristics of the layers they are additionally doped with platinum. The gas sensing properties are strongly dependent on the atomic ratio R{sub Sn/Te}, as well as on the structure, composition and surface morphology. The as-deposited layers with R{sub Sn/Te} 0.8 are highly sensitive humidity sensors working at room temperature. Thermally treated Pt-doped layers with R{sub Sn/Te} 2.3 are promising as ethanol sensors. With the aim of obtaining more detailed knowledge about the surface morphology, structure and composition of layers sensitive to different environments, various techniques -TEM, SAED, SEM, EDS in SEM and white light interferometry (WLI), are applied. It is shown that all layers with 1.0 > R{sub Sn/Te} > 2, as-deposited and thermally treated, exhibit a columnar structure and a very smooth surface along with the nanograined matrix. The thermal treatment causes changes in the structure and composition of the layers. The ethanol-sensitive layers consist of nanosized polycrystalline phases of SnO{sub 2}, Sn{sub 2}O{sub 3}, Sn{sub 3}O{sub 4} and TeO{sub 2}. This knowledge could help us understand better the behaviour and govern the characteristics of layers obtained by co-evaporation of Sn and TeO{sub 2}.

XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO_2 thin films to produce a new hybrid material coating

International Nuclear Information System (INIS)

Drevet, R.; Dragoé, D.; Barthés-Labrousse, M.G.; Chaussé, A.; Andrieux, M.

2016-01-01

Graphical abstract: An innovative hybrid material layer is synthesized by combining two processes. SnO_2 thin films are deposited by MOCVD on Si substrates and an organic layer made of carboxyphenyl moieties is electrochemically grafted by the reduction of a diazonium salt. XPS characterizations are carried out to assess the efficiency of the electrochemical grafting. Display Omitted - Highlights: • An innovative hybrid material layer is synthesized by combining two processes. • SnO_2 thin films are deposited by MOCVD on Si substrates. • An organic layer is electrochemically grafted by the reduction of a diazonium salt. • The efficiency of the grafting is accurately assessed by XPS. • Three electrochemical grafting models are proposed. - Abstract: This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO_2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO_2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

Successful implementation of the stepwise layer-by-layer growth of MOF thin films on confined surfaces: Mesoporous silica foam as a first case study

KAUST Repository

Shekhah, Osama; Fu, Lei; Sougrat, Rachid; Belmabkhout, Youssef; Cairns, Amy; Giannelis, Emmanuel P.; Eddaoudi, Mohamed

2012-01-01

Here we report the successful growth of highly crystalline homogeneous MOF thin films of HKUST-1 and ZIF-8 on mesoporous silica foam, by employing a layer-by-layer (LBL) method. The ability to control and direct the growth of MOF thin films on confined surfaces, using the stepwise LBL method, paves the way for new prospective applications of such hybrid systems. © 2012 The Royal Society of Chemistry.

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

Science.gov (United States)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Progress in Thin Film Solar Cells Based on Cu2ZnSnS4

Directory of Open Access Journals (Sweden)

Hongxia Wang

2011-01-01

Full Text Available The research in thin film solar cells has been dominated by light absorber materials based on CdTe and Cu(In,GaSe2 (CIGS in the last several decades. The concerns of environment impact of cadmium and the limited availability of indium in those materials have driven the research towards developing new substitute light absorbers made from earth abundant, environment benign materials. Cu2ZnSnS4 (CZTS semiconductor material has emerged as one of the most promising candidates for this aim and has attracted considerable interest recently. Significant progress in this relatively new research area has been achieved in the last three years. Over 130 papers on CZTS have been published since 2007, and the majority of them are on the preparation of CZTS thin films by different methods. This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.

Superlattice-like SnSb{sub 4}/Ga{sub 3}Sb{sub 7} thin films for ultrafast switching phase-change memory application

Energy Technology Data Exchange (ETDEWEB)

Hu, Yifeng [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Jiangsu University of Technology, School of Mathematics and Physics, Changzhou (China); He, Zifang; Zhai, Jiwei [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Wu, Pengzhi; Lai, Tianshu [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Guangzhou (China); Song, Sannian; Song, Zhitang [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

2015-11-15

The carrier concentration of Sb-rich phase SnSb{sub 4}, Ga{sub 3}Sb{sub 7} and superlattice-like [SnSb{sub 4}(3.5 nm)/Ga{sub 3}Sb{sub 7}(4 nm)]{sub 7} (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. (orig.)

Highly Sensitive Nanostructured SnO2 Thin Films For Hydrogen Sensing

Science.gov (United States)

Patil, L. A.; Shinde, M. D.; Bari, A. R.; Deo, V. V.

2010-10-01

Nanostructured SnO2 thin films were prepared by ultrasonic spray pyrolysis technique. Aqueous solution (0.05 M) of SnCl4ṡ5H2O in double distilled water was chosen as the starting solution for the preparation of the films. The stock solution was delivered to nozzle with constant and uniform flow rate of 70 ml/h by Syringe pump SK5001. Sono-tek spray nozzle, driven by ultrasonic frequency of 120 kHz, converts the solution into fine spray. The aerosol produced by nozzle was sprayed on glass substrate heated at 150 °C. The sensing performance of the films was tested for various gases such as LPG, hydrogen, ethanol, carbon dioxide and ammonia. The sensor (30 min) showed high gas response (S = 3040 at 350 °C) on exposure of 1000 ppm of hydrogen and high selectivity against other gases. Its response time was short (2 s) and recovery was also fast (12 s). To understand reasons behind this uncommon gas sensing performance of the films, their structural, microstructural, and optical properties were studied using X-ray diffraction, electron microscopy (SEM and TEM) respectively. The results are interpreted

Sensors of the gas CO in thin film of SnO{sub 2}:Cu; Sensores del gas CO en pelicula delgada de SnO{sub 2}:Cu

Energy Technology Data Exchange (ETDEWEB)

Tirado G, S.; Sanchez Z, F. E., E-mail: tirado@esfm.ipn.mx [IPN, Escuela Superior de Fisica y Matematicas, Unidad Profesional Adolfo Lopez Mateos, San Pedro Zacatenco, 07738 Mexico D. F. (Mexico)

2011-10-15

Thin films of SnO{sub 2}:Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO{sub 2} were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO{sub 2}:Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO{sub 2}:Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Energy Technology Data Exchange (ETDEWEB)

Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2015-02-23

Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

KAUST Repository

Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N.

2014-01-01

The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films

Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Pan, Zhanchang; Luo, Junming; Tian, Xinlong; Wu, Shoukun; Chen, Chun; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

2014-01-01

Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

Influence of deposition parameters and annealing on Cu{sub 2}ZnSnS{sub 4} thin films grown by SILAR

Energy Technology Data Exchange (ETDEWEB)

Patel, Kinjal; Shah, Dimple V. [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

2015-02-15

Highlights: • Optimisation of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur.

Structure, Surface Morphology, and Optical and Electronic Properties of Annealed SnS Thin Films Obtained by CBD

Science.gov (United States)

Reghima, Meriem; Akkari, Anis; Guasch, Cathy; Turki-Kamoun, Najoua

2014-09-01

SnS thin films were initially coated onto Pyrex substrates by the chemical bath deposition (CBD) method and annealed at various temperatures ranging from 200°C to 600°C for 30 min in nitrogen gas. X-ray diffraction (XRD) analysis revealed that a structural transition from face-centered cubic to orthorhombic occurs when the annealing temperature is over 500°C. The surface morphology of all thin layers was investigated by means of scanning electron microscopy and atomic force microscopy. The elemental composition of Sn and S, as measured by energy dispersive spectroscopy, is near the stoichiometric ratio. Optical properties studied by means of transmission and reflection measurements show an increase in the absorption coefficient with increasing annealing temperatures. The band gap energy is close to 1.5 eV, which corresponds to the optimum for photovoltaic applications. Last, the thermally stimulated current measurements show that the electrically active traps located in the band gap disappear after annealing at 500°C. These results suggest that, once again, annealing as a post-deposition treatment may be useful for improving the physical properties of the SnS layers included in photovoltaic applications. Moreover, the thermo-stimulated current method may be of practical relevance to explore the electronic properties of more conventional industrial methods, such as sputtering and chemical vapor deposition.

Fabrication of nickel-foam-supported layered zinc-cobalt hydroxide nanoflakes for high electrochemical performance in supercapacitors.

Science.gov (United States)

Yuan, Peng; Zhang, Ning; Zhang, Dan; Liu, Tao; Chen, Limiao; Liu, Xiaohe; Ma, Renzhi; Qiu, Guanzhou

2014-10-04

Nickel foam supported Zn-Co hydroxide nanoflakes were fabricated by a facile solvothermal method. Benefited from the unique structure of Zn-Co hydroxide nanoflakes on a nickel foam substrate, the as prepared materials exhibited an excellent specific capacitance of 901 F g(-1) at 5 A g(-1) and remarkable cycling stability as electrode materials in supercapacitors.

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO-₂x Thin Films.

Science.gov (United States)

Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Sahu, Dipti Ranjan; Huang, Jow-Lay

2015-08-14

Tin oxide (SnO 2-x ) thin films were prepared under various flow ratios of O₂/(O₂ + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O₂/(O₂ + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO₂ thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Experimental study of Pulsed Laser Deposited Cu2ZnSnS 4 (CZTS) thin films for photovoltaic applications

Science.gov (United States)

Nandur, Abhishek S.

Thin film solar cells are gaining momentum as a renewable energy source. Reduced material requirements (15 mum in total thickness) solar cells. Among the various thin film solar absorbers that have been proposed, CZTS (Cu2ZnSnS4) has become the subject of intense interest because of its optimal band gap (1.45 eV), high absorption coefficient (104 cm--1 ) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since films are deposited under high vacuum with excellent stoichiometry transfer from the target. Defect-free, near-stoichiometric poly-crystalline CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of fabrication parameters such as laser energy density, deposition time, substrate temperature and sulfurization (annealing in sulfur) on the surface morphology, composition and optical absorption of the CZTS thin films were examined. The results show that the presence of secondary phases, present both in the bulk and on the surface, affected the electrical and optical properties of the CZTS thin films and the CZTS based TFSCs. After selectively etching away the secondary phases with DIW, HCl and KCN, it was observed that their removal improved the performance of CZTS based TFSCs. Optimal CZTS thin films exhibited an optical band gap of 1.54 eV with an absorption coefficient of 4x10 4cm-1 with a low volume of secondary phases. A TFSC fabricated with the best CZTS thin film obtained from the experimental study done in this thesis showed a conversion efficiency of 6.41% with Voc = 530 mV, Jsc= 27.5 mA/cm2 and a fill factor of 0.44.

Effect of alkali elements in thin-film Cu2ZnSnS4 solar cells produced by solution-processing

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Canulescu, Stela; Schou, Jørgen

The effect of adding Li, Na, and K to Cu2ZnSnS4 nanoparticle thin-film absorber layers has been investigated. Among them, K is found to enhance grain growth as well as increase the photoluminescence of the films....

Drainage and Stratification Kinetics of Foam Films

Science.gov (United States)

Zhang, Yiran; Sharma, Vivek

2014-03-01

Baking bread, brewing cappuccino, pouring beer, washing dishes, shaving, shampooing, whipping eggs and blowing bubbles all involve creation of aqueous foam films. Foam lifetime, drainage kinetics and stability are strongly influenced by surfactant type (ionic vs non-ionic), and added proteins, particles or polymers modify typical responses. The rate at which fluid drains out from a foam film, i.e. drainage kinetics, is determined in the last stages primarily by molecular interactions and capillarity. Interestingly, for certain low molecular weight surfactants, colloids and polyelectrolyte-surfactant mixtures, a layered ordering of molecules, micelles or particles inside the foam films leads to a stepwise thinning phenomena called stratification. Though stratification is observed in many confined systems including foam films containing particles or polyelectrolytes, films containing globular proteins seem not to show this behavior. Using a Scheludko-type cell, we experimentally study the drainage and stratification kinetics of horizontal foam films formed by protein-surfactant mixtures, and carefully determine how the presence of proteins influences the hydrodynamics and thermodynamics of foam films.

Structural and optical characterization of p-type highly Fe-doped SnO2 thin films and tunneling transport on SnO2:Fe/p-Si heterojunction

Science.gov (United States)

Ben Haj Othmen, Walid; Ben Hamed, Zied; Sieber, Brigitte; Addad, Ahmed; Elhouichet, Habib; Boukherroub, Rabah

2018-03-01

Nanocrystalline highly Fe-doped SnO2 thin films were prepared using a new simple sol-gel method with iron amounts of 5, 10, 15 and 20%. The obtained gel offers a long durability and high quality allowing to reach a sub-5 nm nanocrystalline size with a good crystallinity. The films were structurally characterized through X-ray diffraction (XRD) that confirms the formation of rutile SnO2. High Resolution Transmission Electron Microscopy (HRTEM) images reveals the good crystallinity of the nanoparticles. Raman spectroscopy shows that the SnO2 rutile structure is maintained even for high iron concentration. The variation of the PL intensity with Fe concentration reveals that iron influences the distribution of oxygen vacancies in tin oxide. The optical transmittance results indicate a redshift of the SnO2 band gap when iron concentration increases. The above optical results lead us to assume the presence of a compensation phenomenon between oxygen vacancies and introduced holes following Fe doping. From current-voltage measurements, an inversion of the conduction type from n to p is strongly predicted to follow the iron addition. Electrical characterizations of SnO2:Fe/p-Si and SnO2:Fe/n-Si heterojunctions seem to be in accordance with this deduction. The quantum tunneling mechanism is expected to be important at high Fe doping level, which was confirmed by current-voltage measurements at different temperatures. Both optical and electrical properties of the elaborated films present a particularity for the same iron concentration and adopt similar tendencies with Fe amount, which strongly correlate the experimental observations. In order to evaluate the applicability of the elaborated films, we proceed to the fabrication of the SnO2:Fe/SnO2 homojunction for which we note a good rectifying behavior.

Effect of annealing on structural and optical properties of Cu_2ZnSnS_4 thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

2015-01-01

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu_2ZnSnS_4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H_2S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N_2 at the optimized conditions. - Highlights: • Cu_2ZnSnS_4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H_2S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N_2 effectively inhibits the formation of Sn_xS secondary phases.

The effect of low platinum loading on the efficiency of PEMFC’s electrocatalysts supported on TiO2–Nb, and SnO2–Nb: An experimental comparison between active and stable conditions

International Nuclear Information System (INIS)

Shahgaldi, Samaneh; Hamelin, Jean

2015-01-01

Highlights: • SnO 2 –Nb, and TiO 2 –Nb thin films synthesized via sputtering. • SnO 2 –Nb, and TiO 2 –Nb thin films applied as a Pt support in PEMFC. • Low amount of Pt sputtered on supports as catalyst in cathode side. • Fabricate a single cell and plot I–V curves. - Abstract: Electrocatalyst supports have been demonstrated to strongly influence the cost, performance and durability of PEMFC systems, which have been among the heated research topics in the course of the past decades. However, the present support materials used in fuel cell stack are not adequately durable for commercialization. Development of active electrocatalyst with cost effectiveness and high durability is one of the main challenges. In this paper, titania and tin oxide nanoparticles doped nobidium were selected as thermo chemically stable and carbonless electrocatalyst supports. Low Pt loading (0.05 mg/cm 2 ) is deposited on supports through sputtering method, and the structure, the distribution of nanoparticles, and the electrical resistivity were systematically analyzed. To make the studies of oxygen reduction reaction activity, catalytic stability and performance of PEMFC more precise, rotation disk electrode (RDE), cyclic voltammetry (CV), and single cell test were utilized. The data analysis of this study highlighted that SnO 2 –Nb–Pt depicted higher stability and better fuel cell performance in comparison with TiO 2 –Nb–Pt

XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO{sub 2} thin films to produce a new hybrid material coating

Energy Technology Data Exchange (ETDEWEB)

Drevet, R., E-mail: richarddrevet@yahoo.fr [Univ. Paris Sud, SP2M-ICMMO, CNRS UMR 8182, Bât. 410, 91405 Orsay Cedex (France); Université d’Evry Val d’Essonne, LAMBE, CNRS-CEA UMR 8587, Boulevard François Mitterrand, 91025 Evry Cedex (France); Dragoé, D.; Barthés-Labrousse, M.G. [Univ. Paris Sud, SP2M-ICMMO, CNRS UMR 8182, Bât. 410, 91405 Orsay Cedex (France); Chaussé, A. [Université d’Evry Val d’Essonne, LAMBE, CNRS-CEA UMR 8587, Boulevard François Mitterrand, 91025 Evry Cedex (France); Andrieux, M. [Univ. Paris Sud, SP2M-ICMMO, CNRS UMR 8182, Bât. 410, 91405 Orsay Cedex (France)

2016-10-30

Graphical abstract: An innovative hybrid material layer is synthesized by combining two processes. SnO{sub 2} thin films are deposited by MOCVD on Si substrates and an organic layer made of carboxyphenyl moieties is electrochemically grafted by the reduction of a diazonium salt. XPS characterizations are carried out to assess the efficiency of the electrochemical grafting. Display Omitted - Highlights: • An innovative hybrid material layer is synthesized by combining two processes. • SnO{sub 2} thin films are deposited by MOCVD on Si substrates. • An organic layer is electrochemically grafted by the reduction of a diazonium salt. • The efficiency of the grafting is accurately assessed by XPS. • Three electrochemical grafting models are proposed. - Abstract: This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO{sub 2}) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO{sub 2} layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

Microstructural investigation and SnO nanodefects in spray-pyrolyzed SnO2 thin films

DEFF Research Database (Denmark)

Thanachayanont, Chanchana; Yordsri, Visittapong; Boothroyd, Chris

2011-01-01

Spray pyrolysis is one of the most cost-effective methods to prepare SnO2 films due to its ability to deposit large uniform area, low fabrication cost, simplicity and low deposition temperature. Conventionally, scanning electron microscopy (SEM) and X-Ray Diffraction (XRD) are routinely used...... diffraction (CBED). It was found that large grain-size vertically-aligned columnar SnO2 grains were formed after a few layers of small grain-size randomly oriented SnO2 grains. Moreover, CBED showed the presence of SnO nanodefects that had not been reported before and could not be detected by SEM or XRD....

Structure and chemical composition of supported Pt-Sn electrocatalysts for ethanol oxidation

International Nuclear Information System (INIS)

Jiang Luhua; Sun Gongquan; Sun Shiguo; Liu Jianguo; Tang Shuihua; Li Huanqiao; Zhou Bing; Xin Qin

2005-01-01

Carbon supported PtSn alloy and PtSnO x particles with nominal Pt:Sn ratios of 3:1 were prepared by a modified polyol method. High resolution transmission electron microscopy (HRTEM) and X-ray microchemical analysis were used to characterize the composition, size, distribution, and morphology of PtSn particles. The particles are predominantly single nanocrystals with diameters in the order of 2.0-3.0 nm. According to the XRD results, the lattice constant of Pt in the PtSn alloy is dilated due to Sn atoms penetrating into the Pt crystalline lattice. While for PtSnO x nanoparticles, the lattice constant of Pt only changed a little. HRTEM micrograph of PtSnO x clearly shows that the change of the spacing of Pt (1 1 1) plane is neglectable, meanwhile, SnO 2 nanoparticles, characterized with the nominal 0.264 nm spacing of SnO 2 (1 0 1) plane, were found in the vicinity of Pt particles. In contrast, the HRTEM micrograph of PtSn alloy shows that the spacing of Pt (1 1 1) plane extends to 0.234 nm from the original 0.226 nm. High resolution energy dispersive X-ray spectroscopy (HR-EDS) analyses show that all investigated particles in the two PtSn catalysts represent uniform Pt/Sn compositions very close to the nominal one. Cyclic voltammograms (CV) in sulfuric acid show that the hydrogen ad/desorption was inhibited on the surface of PtSn alloy compared to that on the surface of the PtSnO x catalyst. PtSnO x catalyst showed higher catalytic activity for ethanol electro-oxidation than PtSn alloy from the results of chronoamperometry (CA) analysis and the performance of direct ethanol fuel cells (DEFCs). It is deduced that the unchanged lattice parameter of Pt in the PtSnO x catalyst is favorable to ethanol adsorption and meanwhile, tin oxide in the vicinity of Pt nanoparticles could offer oxygen species conveniently to remove the CO-like species of ethanolic residues to free Pt active sites

Fabrication of highly sensitive and selective H{sub 2} gas sensor based on SnO{sub 2} thin film sensitized with microsized Pd islands

Energy Technology Data Exchange (ETDEWEB)

Van Toan, Nguyen; Viet Chien, Nguyen; Van Duy, Nguyen [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No. 1, Dai Co Viet Road, Hanoi (Viet Nam); Si Hong, Hoang [School of Electrical Engineering (SEE), Hanoi University of Science and Technology (HUST), Hanoi (Viet Nam); Nguyen, Hugo [Division of Microsystems Technology, Department of Engineering Sciences, Uppsala University, 75237 Uppsala (Sweden); Duc Hoa, Nguyen [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No. 1, Dai Co Viet Road, Hanoi (Viet Nam); Van Hieu, Nguyen, E-mail: hieu@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No. 1, Dai Co Viet Road, Hanoi (Viet Nam)

2016-01-15

Highlights: • H{sub 2} gas sensors based on SnO{sub 2} thin film sensitized with Pd islands were fabricated. • The sensors could monitor hazardous H{sub 2}n gas at low concentrations of 25–250 ppm. • H{sub 2} response of Pd/SnO{sub 2} is higher than that of Pt/SnO{sub 2} and Au/SnO{sub 2} sensors. • Enhancement of sensor performance was discussed based on spillover and diffusion mechanisms. - Abstract: Ultrasensitive and selective hydrogen gas sensor is vital component in safe use of hydrogen that requires a detection and alarm of leakage. Herein, we fabricated a H{sub 2} sensing devices by adopting a simple design of planar-type structure sensor in which the heater, electrode, and sensing layer were patterned on the front side of a silicon wafer. The SnO{sub 2} thin film-based sensors that were sensitized with microsized Pd islands were fabricated at a wafer-scale by using a sputtering system combined with micro-electronic techniques. The thicknesses of SnO{sub 2} thin film and microsized Pd islands were optimized to maximize the sensing performance of the devices. The optimized sensor could be used for monitoring hydrogen gas at low concentrations of 25–250 ppm, with a linear dependence to H{sub 2} concentration and a fast response and recovery time. The sensor also showed excellent selectivity for monitoring H{sub 2} among other gases, such as CO, NH{sub 3}, and LPG, and satisfactory characteristics for ensuring safety in handling hydrogen. The hydrogen sensing characteristics of the sensors sensitized with Pt and Au islands were also studied to clarify the sensing mechanisms.

Electrical transport properties of spray deposited transparent conducting ortho-Zn2SnO4 thin films

Science.gov (United States)

Ramarajan, R.; Thangaraju, K.; Babu, R. Ramesh; Joseph, D. Paul

2018-04-01

Ortho Zinc Stannate (Zn2SnO4) exhibits excellent electrical and optical properties to serve as alternate transparent electrode in optoelectronic devices. Here we have optimized ortho-Zn2SnO4 thin film by spray pyrolysis method. Deposition was done onto a pre-heated glass substrate at a temperature of 400 °C. The XRD pattern indicated films to be polycrystalline with cubic structure. The surface of films had globular and twisted metal sheet like morphologies. Films were transparent in the visible region with band gap around 3.6 eV. Transport properties were studied by Hall measurements at 300 K. Activation energies were calculated from Arrhenius's plot from temperature dependent electrical measurements and the conduction mechanism is discussed.

Comparative investigation on cation-cation (Al-Sn) and cation-anion (Al-F) co-doping in RF sputtered ZnO thin films: Mechanistic insight

Energy Technology Data Exchange (ETDEWEB)

Mallick, Arindam; Basak, Durga, E-mail: sspdb@iacs.res.in

2017-07-15

Highlights: • Comparative study on Al, Al-Sn and Al-F doped ZnO films has been carried out. • High transparent Al-F co-doped film shows three times enhanced carrier density. • Al-F co-doped film shows larger carrier relaxation time. • Al-Sn co-doped films shows carrier transport dominated by impurity scattering. • Al-F co-doped ZnO film can be applied as transparent electrode. - Abstract: Herein, we report a comparative mechanistic study on cation-cation (Al-Sn) and cation-anion (Al-F) co-doped nanocrystalline ZnO thin films grown on glass substrate by RF sputtering technique. Through detailed analyses of crystal structure, surface morphology, microstructure, UV-VIS-NIR transmission-reflection and electrical transport property, the inherent characteristics of the co-doped films were revealed and compared. All the nanocrystalline films retain the hexagonal wurtzite structure of ZnO and show transparency above 90% in the visible and NIR region. As opposed to expectation, Al-Sn (ATZO) co-doped film show no enhanced carrier concentration consistent with the probable formation of SnO{sub 2} clusters supported by the X-ray photoelectron spectroscopy study. Most interestingly, it has been found that Al-F (AFZO) co-doped film shows three times enhanced carrier concentration as compared to Al doped and Al-Sn co-doped films attaining a value of ∼9 × 10{sup 20} cm{sup −3} due to the respective cation and anion substitution. The carrier relaxation time increases in AFZO while it decreases significantly for ATZO film consistent with the concurrence of the impurity scattering in the latter.

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films

Directory of Open Access Journals (Sweden)

Chun-Min Wang

2015-08-01

Full Text Available Tin oxide (SnO2—x thin films were prepared under various flow ratios of O2/(O2 + Ar on unheated glass substrate using the ion beam sputtering (IBS deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar, chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD and transmission electron microscopy (TEM analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM. Auger electron spectroscopy (AES analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Graphene supported Sn-Sb rate at carbon core-shell particles as a superior anode for lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Chen, Shuangqiang; Chen, Peng; Wang, Yong [Department of Chemical Engineering, School of Environmental and Chemical Engineering, Shanghai University (China); Wu, Minghong; Pan, Dengyu [Institute of Nanochemistry and Nanobiology, Shanghai Univ. (China)

2010-10-15

This paper reports the preparation and Li-storage properties of graphene nanosheets(GNS), GNS supported Sn-Sb rate at carbon (50-150 nm) and Sn-Sb nanoparticles (5-10 nm). The best cycling performance and excellent high rate capabilities were observed for GNS-supported Sn-Sb rate at carbon core-shell particles, which exhibited initial capacities of 978, 850 and 668 mAh/g respectively at 0.1C, 2C and 5C (1C = 800 mA/g) with good cyclability. Besides the GNS support, the carbon skin around Sn-Sb particles is believed to be a key factor to improve electrochemical properties of Sn-Sb. (author)

Preparation of SnO{sub 2}-CNTs supported Pt catalysts and their electrocatalytic properties for ethanol oxidation

Energy Technology Data Exchange (ETDEWEB)

Pang, H.L.; Lu, J.P. [State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); Chen, J.H. [State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China)], E-mail: chenjinhua@hnu.cn; Huang, C.T.; Liu, B.; Zhang, X.H. [State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China)

2009-03-30

SnO{sub 2}-carbon nanotubes (CNTs) composites were prepared by sol-gel method, and characterized by scanning electron microscopy and X-ray diffraction. Due to high stability in diluted acidic solution, SnO{sub 2}-CNTs composites were selected as the catalyst support and second catalyst for ethanol electrooxidation. The electrocatalytic properties of the SnO{sub 2}-CNTs supported platinum (Pt) catalyst (Pt/SnO{sub 2}-CNTs) for ethanol oxidation have been investigated by typical electrochemical methods. Under the same mass loading of Pt, the Pt/SnO{sub 2}-CNTs catalyst shows higher electrocatalytic activity and better long-term cycle stability than Pt/SnO{sub 2} catalyst. Additionally, the effect of the mass ratio of CNTs to SnO{sub 2} on the electrocatalytic activity of the electrode for ethanol oxidation was investigated, and the optimum mass ratio of CNTs to SnO{sub 2} in the Pt/SnO{sub 2}-CNTs catalyst is 1/6.3.

Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

International Nuclear Information System (INIS)

Amaral, A.; Brogueira, P.; Conde, O.; Lavareda, G.; Nunes de Carvalho, C.

2012-01-01

The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95–80) % In:(5–20) % Sn alloys as evaporation sources and 19.5 mW/cm 2 and 58.6 mW/cm 2 as rf-power densities. The two most important macroscopic properties – visible transparency and electrical resistivity – are relatively independent of tin content (0–20%). Visible transmittance of about 75% and electrical resistivity around 5 × 10 −4 Ω·cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm 2 from a 5% Sn alloy or at 19.5 mW/cm 2 from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: ► InO x :Sn and InO x thin films were deposited at room temperature. ► Transparency and electrical resistivity are relatively independent of Sn content. ► Device quality material was obtained. ► The surface morphology homogeneity of the films varies with tin content.

CO oxidation catalyzed by ag nanoparticles supported on SnO/CeO2

KAUST Repository

Khan, Inayatali

2015-01-01

Ag-Sn/CeO2 catalysts were synthesized by the co-precipitation method with different Ag-Sn wt.% loadings and were tested for the oxidation of CO. The catalysts were characterized by powder X-ray diffractometry (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDS), and selected area electron diffraction (SAED) techniques. UV-Vis measurements were carried out to elucidate the ionic states of the silver particles, and the temperature-programmed reduction (TPR) technique was employed to check the reduction temperature of the catalyst supported on CeO2. There are peaks for silver crystallites in the X-ray diffraction patterns and the presence of SnO was not well evidenced by the XRD technique due to sintering inside the 3D array channels of CeO2 during the calcination process. The Ag-Sn/CeO2 (4%) catalyst was the most efficient and exhibited 100% CO oxidation at 100 °C due to small particle size and strong electronic interaction with the SnO/CeO2 support. © 2015 Sociedade Brasileira de Química.

The role of Tin Oxide Concentration on The X-ray Diffraction, Morphology and Optical Properties of In2O3:SnO2 Thin Films

Science.gov (United States)

Hasan, Bushra A.; Abdallah, Rusul M.

2018-05-01

Alloys were performed from In2O3 doped SnO2 with different doping ratio by quenching from the melt technique. Pulsed Laser Deposition PLD was used to deposit thin films of different doping ratio In2O3 : SnO2 (0, 1, 3, 5, 7 and 9 % wt.) on glass substrate at ambient temperature under vacuum of 10-3 bar thickness of ∼100nm. The structural type,grain size and morphology of the prepared alloys compounds and thin films were examined using X-ray diffraction and atomic force microscopy. The results showed that all alloys have polycrystalline structures and the peaks belonged to the preferred plane for crystal growth were identical with the ITO (Indium – Tin –Oxide) standard cards also another peaks were observed belonged to SnO2 phase. The structures of thin films was also polycrystalline, and the predominate peaks are identical with standard cards ITO. On the other side the prepared thin films declared decrease a reduction of degree of crystallinity with the increase of doping ratio. Atomic Force Microscopy AFM measurements showed the average grain size and average surface roughness exhibit to change in systematic manner with the increase of doping ratio with tin oxide. The optical measurements show that the In2O3:SnO2 thin films have a direct energy gap Eg opt in the first stage decreases with the increase of doping ratio and then get to increase with further increase of doping ration, whereas reverse to that the optical constants such as refractive index (n), extinction coefficient (k) and dielectric constant (εr, εi) have a regular increase with the doping ratio by tin oxide and then decreases.

Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process.

Science.gov (United States)

Kim, Gee Yeong; Kim, Ju Ri; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

2014-01-08

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.PACS number: 08.37.-d; 61.72.Mm; 71.35.-y.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Jiawei Zhang

2017-03-01

Full Text Available Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO and p-type tin monoxide (SnO is presented. The IGZO thin-film transistor (TFT shows a linear mobility of 11.9 cm2/(V∙s and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

Science.gov (United States)

Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

2017-03-21

Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

Carbon-encapsulated nickel-iron nanoparticles supported on nickel foam as a catalyst electrode for urea electrolysis

International Nuclear Information System (INIS)

Wu, Mao-Sung; Jao, Chi-Yu; Chuang, Farn-Yih; Chen, Fang-Yi

2017-01-01

Highlights: • Electrochemical process can purify the urea-rich wastewater, producing hydrogen gas. • Carbon-encapsulated nickel iron nanoparticles (CE-NiFe) are prepared by pyrolysis. • An ultra-thin layer of CE-NiFe nanoparticles is attached to the 3D Ni foam. • CE-NiFe nanoparticles escalate both the urea electrolysis and hydrogen evolution. - Abstract: A cyanide-bridged bimetallic coordination polymer, nickel hexacyanoferrate, could be pyrolyzed to form carbon-encapsulated nickel-iron (CE-NiFe) nanoparticles. The formation of nitrogen-doped spherical carbon shell with ordered mesoporous structure prevented the structural damage of catalyst cores and allowed the migration and diffusion of electrolyte into the hollow carbon spheres. An ultra-thin layer of CE-NiFe nanoparticles could be tightly attached to the three-dimensional macroporous nickel foam (NF) by electrophoretic deposition. The CE-NiFe nanoparticles could lower the onset potential and increase the current density in anodic urea electrolysis and cathodic hydrogen production as compared with bare NF. Macroporous NF substrate was very useful for the urea electrolysis and hydrogen production, which allowed for fast transport of electron, electrolyte, and gas products. The superior electrocatalytic ability of CE-NiFe/NF electrode in urea oxidation and water reduction made it favorable for versatile applications such as water treatment, hydrogen generation, and fuel cells.

Effect of thickness on electrical properties of SILAR deposited SnS thin films

Science.gov (United States)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

Structural, optical and electrical properties of Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films prepared by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Khadka, Dhruba B.; Kim, JunHo, E-mail: jhk@inu.ac.kr

2015-07-25

Highlights: • CFTS(Se) thin films have been synthesized by low-cost spray-based deposition. • The fabricated films were found to be of stannite structure and p-type conductivity. • Band gaps of CFTS and CFTSe thin films are 1.37 and 1.11 eV, respectively. - Abstract: We report on fabrication of polycrystalline Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films by chemical spray pyrolysis subsequent with post-sulfurization and selenization. The post-annealing of as-sprayed Cu{sub 2}FeSnS{sub 4} (CFTS) films in sulfur and selenium ambient demonstrated drastically improved surface texture as well as crystallinity. The crystal lattice parameters calculated from X-ray diffraction patterns for post-annealed films were found to be consistent with stannite structure. The fabricated Cu{sub 2}FeSnS{sub 4} (CFTS) and Cu{sub 2}FeSnSe{sub 4} (CFTSe) films showed p-type conductivity with carrier concentration in the range of 10{sup 21} cm{sup −3} and mobility ∼1–5 cm{sup 2} V{sup −1} s{sup −1}. The band gap energies of post-sulfurized CFTS and post-selenized CFTSe films were estimated to be ∼1.37 eV and ∼1.11 eV with an error of ±0.02 eV by UV–Vis absorption, respectively, which are promising for photovoltaic application.

Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells

Science.gov (United States)

Reddy, N. Nanda Kumar; Akkera, Harish Sharma; Sekhar, M. Chandra; Park, Si-Hyun

2017-12-01

In the present work, we investigated the effect of Zr doping (0-6 at%) on the structural, electrical, and optical properties of tin oxide (SnO2) thin films deposited onto glass substrates using a spray pyrolysis technique. The room-temperature X-ray diffraction pattern shows that all deposited films exhibit polycrystalline tetragonal structure. The pure SnO2 film is grown along a preferred (200) direction, whereas Zr-doped SnO2 (Zr:SnO2) films started growing along the (220) orientation along with a high intensity peak of (200). Scanning electron microscope (SEM) and atomic force microscope (AFM) images showed that the grains of the films are spherical in structure, and the grain size decreased with increasing of Zr concentration. The optical transmission spectra of deposited films as a function of wavelength confirm that the average optical transmittance is > 85% for Zr:SnO2 films. The value of the optical bandgap is significantly decreased from 3.94 to 3.68 eV with increasing Zr concentration. Furthermore, the electrical measurements found that the sheet resistance ( R sh) and resistivity ( ρ) values are decreased with increasing of Zr doping. The lowest values of R sh = 6.82 Ω and ρ = 0.4 × 10- 3 Ω cm are found in 6-at% Zr-doped SnO2 film. In addition, a good efficiency value of the figure of merit ( ɸ = 3.35 × 10- 3 Ω-1) is observed in 6-at% Zr-doped SnO2 film. These outstanding properties of Zr-doped SnO2 films make them useful for several optoelectronic device applications.

Effect of film size on drainage of foam and emulsion films

International Nuclear Information System (INIS)

Malhotra, A.K.; Wasan, D.T.

1987-01-01

All available theoretical analyses for the drainage of thin plane-parallel liquid films, such as those existing between two approaching liquid droplets or bubbles in the coalescence process, predict essentially the same dependence of rate of thinning of the intervening film on its size as is described by the Reynolds equation - that is, drainage time increases with the square of the film radius. Recently, the authors reported experimental data for both foam and emulsion films which showed that the measured drainage times increase with about a 0.8 power of the film radius, a value much smaller than the theoretically predicted value of 2.0. Here they present a hydrodynamic analysis to predict the experimentally observed effect of film size on the kinetics of thinning of emulsion and foam films. They extend the applicability of the Reynolds model by accounting for the flow in the Plateau borders as well as the London-van der Waals forces in the thin film phase. Their theoretical predictions are in good agreement with the experimental data on the dependence of drainage time of both foam and emulsion films on their radii

Study on the preheating duration of Cu{sub 2}SnS{sub 3} thin films using RF magnetron sputtering technique for photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Dong, Yuchen; He, Jun; Li, Xinran; Chen, Ye; Sun, Lin, E-mail: lsun@ee.ecnu.edu.cn; Yang, Pingxiong; Chu, Junhao

2016-04-25

Cu{sub 2}SnS{sub 3} (CTS) thin films are prepared by sulfurization the stacked metallic precursors deposited by raido-frequency magnetron sputtering method on molybdenum-coated soda lime glass substrates. The details of sulfurization process and the effect of preheating duration on the properties of CTS thin films have been investigated. It is found that the content of element tin strongly depend on the preheating duration. X-ray diffraction patterns identify that the CTS thin films exhibit the monoclinic structure. Raman scattering spectra make a further confirmation for the crystal structure. Fourier transform infrared reflectance spectroscopy (FTIR) is first used to study the properties of CTS thin films. The assigned active modes in Raman scattering spectra is consistent with the analysis in FTIR. Morphology analysis reveals long preheating duration would make the quality of films deteriorate. The thin film solar cell (TFSC) fabricated using the CTS absorber layer synthesized at preheating duration of 15 min shows that a power conversion efficiency up to 0.76% for a 0.19 cm{sup 2} area. The electrical characterization of CTS TFSC is first studied by electrochemical impedance spectroscopy, which implies the existence of MoS{sub x} and defects in the CTS/CdS interface. - Highlights: • CTS thin films and solar cells prepared by RF magnetron sputtering. • Preheating duration is a critical way to remain the Sn content in CTS thin film. • XRD, Raman, FTIR and XPS confirmed the single phase of CTS thin film. • The device characterization of CTS solar cell has been systematically investigated.

SiSn diodes: Theoretical analysis and experimental verification

KAUST Repository

Hussain, Aftab M.; Wehbe, Nimer; Hussain, Muhammad Mustafa

2015-01-01

We report a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn). We formed SiSn ultra-thin film on the top surface of a 4 in. silicon wafer using thermal diffusion of Sn

Ethanol electrooxidation on novel carbon supported Pt/SnO{sub x}/C catalysts with varied Pt:Sn ratio

Energy Technology Data Exchange (ETDEWEB)

Jiang, L. [Institute of Surface Chemistry and Catalysis, Ulm University, D-89069 Ulm (Germany); Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023 Dalian (China); Colmenares, L.; Jusys, Z. [Institute of Surface Chemistry and Catalysis, Ulm University, D-89069 Ulm (Germany); Sun, G.Q. [Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023 Dalian (China)], E-mail: gqsun@dicp.ac.cn; Behm, R.J. [Institute of Surface Chemistry and Catalysis, Ulm University, D-89069 Ulm (Germany)], E-mail: juergen.behm@uni-ulm.de

2007-12-01

Novel carbon supported Pt/SnO{sub x}/C catalysts with Pt:Sn atomic ratios of 5:5, 6:4, 7:3 and 8:2 were prepared by a modified polyol method and characterized with respect to their structural properties (X-ray diffraction (XRD) and transmission electron microscopy (TEM)), chemical composition (XPS), their electrochemical properties (base voltammetry, CO{sub ad} stripping) and their electrocatalytic activity and selectivity for ethanol oxidation (ethanol oxidation reaction (EOR)). The data show that the Pt/SnO{sub x}/C catalysts are composed of Pt and tin oxide nanoparticles with an average Pt particle diameter of about 2 nm. The steady-state activity of the Pt/SnO{sub x}/C catalysts towards the EOR decreases with tin content at room temperature, but increases at 80 deg. C. On all Pt/SnO{sub x}/C catalysts, acetic acid and acetaldehyde represent dominant products, CO{sub 2} formation contributes 1-3% for both potentiostatic and potentiodynamic reaction conditions. With increasing potential, the acetaldehyde yield decreases and the acetic acid yield increases. The apparent activation energies of the EOR increase with tin content (19-29 kJ mol{sup -1}), but are lower than on Pt/C (32 kJ mol{sup -1}). The somewhat better performance of the Pt/SnO{sub x}/C catalysts compared to alloyed PtSn{sub x}/C catalysts is attributed to the presence of both sufficiently large Pt ensembles for ethanol dehydrogenation and C-C bond splitting and of tin oxide for OH generation. Fuel cell measurements performed for comparison largely confirm the results obtained in model studies.

Effect of sulfurization temperature on the property of Cu2ZnSnS4 thin film by eco-friendly nanoparticle ink method

Science.gov (United States)

Wang, Wei; Shen, Honglie; Yao, Hanyu; Shang, Huirong; Tang, ZhengXia; Li, Yufang

2017-09-01

Cu2ZnSnS4 (CZTS) thin films were fabricated by a low-cost nanoparticle ink method. The eco-friendly hydrophilic CZTS nanoparticles were mixed with low-cost n-propanol to form nanoparticle ink. To improve crystallinity and remove oxygen element, the CZTS thin films were sulfurized further. The effects of sulfurization temperature on the structure, morphologies, and photovoltaic performances of CZTS thin films were investigated. The results showed that the crystallinity of CZTS thin film was improved with increasing sulfurization temperature. The surface morphology studies demonstrated the formation of compact and homogenous CZTS thin film at a sulfurization temperature of 600 °C. By optimizing thickness of CZTS thin film, the CZTS thin-film solar cell with an optimal efficiency of 2.1% was obtained.

Aerosol-foam interaction experiments

International Nuclear Information System (INIS)

Ball, M.H.E.; Luscombe, C.DeM.; Mitchell, J.P.

1990-03-01

Foam treatment offers the potential to clean gas streams containing radioactive particles. A large decontamination factor has been claimed for the removal of airborne plutonium dust when spraying a commercially available foam on the walls and horizontal surfaces of an alpha-active room. Experiments have been designed and undertaken to reproduce these conditions with a non-radioactive simulant aerosol. Careful measurements of aerosol concentrations with and without foam treatment failed to provide convincing evidence to support the earlier observation. The foam may not have been as well mixed with the aerosol in the present studies. Further work is required to explore more efficient mixing methods, including systems in which the aerosol steam is passed through the foam, rather than merely spraying foam into the path of the aerosol. (author)

Ni-Pd-Al2O3 catalyst supported on reticulated ceramic foam for dry methane reforming

Directory of Open Access Journals (Sweden)

Vesna Nikolić

2015-03-01

Full Text Available In the present study, Ni-Pd/Al2O3 catalyst supported on α-Al2O3 based foam was prepared and evaluated in the dry methane reforming process. Corresponding metal chlorides were deposited to the foam surface by impregnation of the foam with ultrasonically aerosolized salt solutions at 473 K and drying at that temperature. Calcination step was excluded and the catalyst was reduced at very low temperature – 533 K. The reforming experiment lasted for 3 h, with standing time of 1 h at the following temperatures: 873, 973 and 1023 K. Conclusions on selectivity, catalytic activity and stability were reached on the basis of CO and H2 yields.

Coated foams, preparation, uses and articles

Science.gov (United States)

Duchane, D.V.; Barthell, B.L.

1982-10-21

Hydrophobic cellular material is coated with a thin hydrophilic polymer skin which stretches tightly over the foam but which does not fill the cells of the foam, thus resulting in a polymer-coated foam structure having a smoothness which was not possible in the prior art. In particular, when the hydrophobic cellular material is a specially chosen hydrophobic polymer foam and is formed into arbitrarily chosen shapes prior to the coating with hydrophilic polymer, inertial confinement fusion (ICF) targets of arbitrary shapes can be produced by subsequently coating the shapes with metal or with any other suitable material. New articles of manufacture are produced, including improved ICF targets, improved integrated circuits, and improved solar reflectors and solar collectors. In the coating method, the cell size of the hydrophobic cellular material, the viscosity of the polymer solution used to coat, and the surface tension of the polymer solution used to coat are all very important to the coating.

Synthesis of Nanocrystalline SnOx (x = 1–2 Thin Film Using a Chemical Bath Deposition Method with Improved Deposition Time, Temperature and pH

Directory of Open Access Journals (Sweden)

Zulkarnain Zainal

2011-09-01

Full Text Available Nanocrystalline SnOx (x = 1–2 thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and temperature of deposition and shift the pH of the solution to the noncorrosive region. The films were characterized for composition, surface morphology, structure and optical properties. X-ray diffraction analysis confirms that SnOx thin films consist of a polycrystalline structure with an average grain size of 36 nm. Atomic force microscopy studies show a uniform grain distribution without pinholes. The elemental composition was evaluated by energy dispersive X-ray spectroscopy. The average O/Sn atomic percentage ratio is 1.72. Band gap energy and optical transition were determined from optical absorbance data. The film was found to exhibit direct and indirect transitions in the visible spectrum with band gap values of about 3.9 and 3.7 eV, respectively. The optical transmittance in the visible region is 82%. The SnOx nanocrystals exhibit an ultraviolet emission band centered at 392 nm in the vicinity of the band edge, which is attributed to the well-known exciton transition in SnOx. Photosensitivity was detected in the positive region under illumination with white light.

High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

Directory of Open Access Journals (Sweden)

Jung-Sik Kim

2016-09-01

Full Text Available In this work, transparent conducting oxides (TCOs have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se4 (CZTSSe solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO or indium tin oxide (ITO and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

2015-11-02

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.

Noncollinear antiferromagnetic Mn3Sn films

Science.gov (United States)

Markou, A.; Taylor, J. M.; Kalache, A.; Werner, P.; Parkin, S. S. P.; Felser, C.

2018-05-01

Noncollinear hexagonal antiferromagnets with almost zero net magnetization were recently shown to demonstrate giant anomalous Hall effect. Here, we present the structural and magnetic properties of noncollinear antiferromagnetic Mn3Sn thin films heteroepitaxially grown on Y:ZrO2 (111) substrates with a Ru underlayer. The Mn3Sn films were crystallized in the hexagonal D 019 structure with c -axis preferred (0001) crystal orientation. The Mn3Sn films are discontinuous, forming large islands of approximately 400 nm in width, but are chemical homogeneous and characterized by near perfect heteroepitaxy. Furthermore, the thin films show weak ferromagnetism with an in-plane uncompensated magnetization of M =34 kA/m and coercivity of μ0Hc=4.0 mT at room temperature. Additionally, the exchange bias effect was studied in Mn3Sn /Py bilayers. Exchange bias fields up to μ0HEB=12.6 mT can be achieved at 5 K. These results show Mn3Sn films to be an attractive material for applications in antiferromagnetic spintronics.

Effect of substrate temperature on structural and optical properties of nitrogen doped SnO2 thin film

International Nuclear Information System (INIS)

Thakur, Anup; Kumar, Varinder; Kang, Se Jun; Lee, Ik-Jae; Gautam, Sanjeev; Chae, K. H.; Shin, Hyun Joon

2014-01-01

Nitrogen doped SnO 2 thin films (thickness ∼ 250 nm) were deposited at different substrate temperature by radio frequency (rf) sputtering method. Crystal structure, morphology and optical properties of these films were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS-NIR spectrophotometer, respectively. XRD measurement suggests that the film deposited at room temperature was amorphous in nature and films deposited at higher temperature were crystalline in nature. The film deposited at RT and 200 °C have transparency more than 90% in visible region but the film deposited at 400 °C has lesser transparency. Red shift was observed in the absorption edge may be due to decrease in ionicity due to the formation of the Sn-N bond

Adsorption and oxidation of acetaldehyde on carbon supported Pt, PtSn and PtSn-based trimetallic catalysts by in situ Fourier transform infrared spectroscopy

Science.gov (United States)

Beyhan, Seden; Léger, Jean-Michel; Kadırgan, Figen

2013-11-01

The adsorption and oxidation of acetaldehyde on carbon supported Pt, Pt90Sn10 and Pt80Sn10M10 (M = Ni, Co, Rh, Pd) catalysts have been investigated by using in situ Fourier transform infrared (FTIR) spectroscopy. The result revealed that Pt90Sn10/C catalyst is not very efficient for the conversion of acetaldehyde to CO2 due to the weak adsorption of acetaldehyde in the presence of Sn. However, the addition of a third metal to Pt--Sn facilitates the C-C bond cleavage of acetaldehyde. It seems that acetaldehyde is adsorbed dissociatively on the surface of Pt80Sn10Ni10/C, Pt80Sn10Co10/C, Pt80Sn10Rh10/C catalysts, producing CH3 and CHO adsorbate species, which can be further oxidized to CO2. However, the pathway forming CO2 for Pt80Sn10Pd10/C catalyst mainly originates from the oxidation of CH3CO species. Thus, the presence of third metal in the PtSn catalyst has a strong impact upon the acetaldehyde adsorption behaviour and its reaction products.

Phase transitions in thin films of Sn-Sb-Se system

International Nuclear Information System (INIS)

Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

1998-01-01

The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

International Nuclear Information System (INIS)

Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

2009-01-01

Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

Science.gov (United States)

Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

2018-02-01

In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

Anaerobic Digestion Foaming Causes

OpenAIRE

Ganidi, Nafsika

2008-01-01

Anaerobic digestion foaming has been encountered in several sewage treatment plants in the UK. Foaming has raised major concerns for the water utilities due to significant impacts on process efficiency and operational costs. Several foaming causes have been suggested over the past few years by researchers. However, the supporting experimental information is limited and in some cases site specific. The present report aimed to provide a better understanding of the anaerobic di...

SnO{sub 2} foam grain-shaped nanoparticles: Synthesis, characterization and UVA light induced photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Abdelkader, Elaziouti, E-mail: elaziouti_a@yahoo.com [Laboratory of Electronic Microscope and Materials Science, University of Science and Technology of Oran (USTO M. B), BP 1505 El M' naouar, 31000 Oran (Algeria); Nadjia, Laouedj, E-mail: nlaouedj@yahoo.fr [Laboratory of Inorganic Materials Chemistry and Application, University of Science and Technology of Oran (USTO M. B), BP 1505 El M' naouar, 31000 Oran (Algeria); Naceur, Benhadria, E-mail: nacer1974@yahoo.fr [Laboratory of Inorganic Materials Chemistry and Application, University of Science and Technology of Oran (USTO M. B), BP 1505 El M' naouar, 31000 Oran (Algeria); Noureddine, Bettahar, E-mail: nbettahar2001@yahoo.fr [Laboratory of Inorganic Materials Chemistry and Application, University of Science and Technology of Oran (USTO M. B), BP 1505 El M' naouar, 31000 Oran (Algeria)

2016-09-15

Cassiterite (tin oxide; SnO{sub 2}) nanoparticles (NPs), has been successfully synthesized via a sol-gel method. The obtained compounds are subsequently calcined at 80, 450 and 650 °C for 4 h and are assigned as SnO{sub 2}-80, SnO{sub 2}-450 NPs and SnO{sub 2}-650 NPs, respectively. All prepared samples were characterized using thermogravimetric analysis coupled with mass spectroscopy (TG-SM), X-ray diffraction (XRD), scanning electron microscope (SEM) and UV–vis diffuse reflectance spectroscopy (UV–vis DRS). The XRD results confirmed the aggregated cassiterite SnO{sub 2} nanoparticles (NPs) with a size ranging from 13 to 23 nm. The absorption edge of the SnO{sub 2} NPs samples calcined at higher temperatures showed 25 nm (SnO{sub 2}-450 NPs) and 10 nm (SnO{sub 2}-650 NPs) red shifted compared with that of commercial SnO{sub 2}-com NPs sample. The photodegradation efficiency of SnO{sub 2} NPs was investigated using Congo red (CR) dye, as model organic pollutant. The effect of environmental factors (e.g., reaction time and calcination temperature) on the photocatalysis process of CR on SnO{sub 2} NPs was investigated in photocatalysis process under UVA light irradiation. We found that the SnO{sub 2}-650 NPs with 23 nm particle size and about 3.49 eV band gap was higher than that of the SnO{sub 2}-450 as well as the commercial SnO{sub 2}-com NPs. Pseudo-first-order kinetic model gave the best fit, with highest correlation coefficients (R{sup 2} ≥ 0.95). On the basis of the energy band diagram positions, the enhanced photodegradation efficiency SnO{sub 2} NPs catalyst could be proceeded via direct reactions with (O{sub 2}·{sup -} and ·OH), as active oxidative species involved in the photocatalysis process of CR dye under UVA-light irradiation. - Highlights: • SnO{sub 2} NPs photocatalysts were synthesized using a facile sol–gel route. • As-prepared SnO{sub 2} NPs were characterized by XRD, SEM and UV–vis-DRS techniques. • Noticeably UVA

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

Science.gov (United States)

Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

2017-02-01

The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

Tests results of Nb$_{3}$Sn quadrupole magnets using a shell-based support structure

CERN Document Server

Caspi, S

2009-01-01

In support of the development of a 90 mm aperture Nb$_{3}$Sn superconducting quadrupole for the US LHC Accelerator Research Program (LARP), test results of five quadrupole magnets are compared. All five assemblies used key and bladder technology to compress and support the coils within an iron yoke and an aluminium shell. The first three models (TQS01a, b, c) used Nb$_{3}$Sn MJR conductor and segmented bronze poles. The last two models (TQS02a, b) used Nb$_{3}$Sn RRP conductor, and segmented titanium alloy (TiAl6V4) poles, with no axial gaps during reaction. This presentation summarizes the magnets performance during assembly, cool-down and excitation and compares measurements with design expectations.

Liquid phase assisted grain growth in Cu2ZnSnS4 nanoparticle thin films by alkali element incorporation

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Canulescu, Stela; Schou, Jørgen

2018-01-01

The effect of adding LiCl, NaCl, and KCl to Cu2ZnSnS4 (CZTS) nanoparticle thin-film samples annealed in a nitrogen and sulfur atmosphere is reported. We demonstrate that the organic ligand-free nanoparticles previously developed can be used to produce an absorber layer of high quality. The films...

The effect of the film thickness and doping content of SnO2:F thin films prepared by the ultrasonic spray method

International Nuclear Information System (INIS)

Rahal Achour; Benramache Said; Benhaoua Boubaker

2013-01-01

This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO 2 :F thin films were deposited at a 350 °C pending time (5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO 2 :F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 (Ω·cm) −1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO 2 :F thin films deposited by ultrasonic spray was reported. (semiconductor materials)

Effect of Zn/Sn molar ratio on the microstructural and optical properties of Cu2Zn1-xSnxS4 thin films prepared by spray pyrolysis technique

Science.gov (United States)

Thiruvenkadam, S.; Prabhakaran, S.; Sujay Chakravarty; Ganesan, V.; Vasant Sathe; Santhosh Kumar, M. C.; Leo Rajesh, A.

2018-03-01

Quaternary kesterite Cu2ZnSnS4 (CZTS) compound is one of the most promising semiconductor materials consisting of abundant and eco-friendly elements for absorption layer in thin film solar cells. The effect of Zn/Sn ratio on Cu2Zn1-xSnxS4 (0 ≤ x ≤ 1) thin films were studied by deposited by varying molar volumes in the precursor solution of zinc and tin was carried out in proportion of (1-x) and x respectively onto soda lime glass substrates kept at 573 K by using chemical spray pyrolysis technique. The GIXRD pattern revealed that the films having composites of Cu2ZnSnS4, Cu2SnS3, Sn2S3, CuS and ZnS phases. The crystallinity and grain size were found to increase by increasing the x value and the preferential orientation along (103), (112), (108) and (111) direction corresponding to CZTS, Cu2SnS3, CuS, and ZnS phases respectively. Micro-Raman spectra exposed a prominent peak at 332 cm-1 corresponding to the CZTS phase. Atomic force microscopy was employed to study the grain size and roughness of the deposited thin films. The optical band gap was found to lie between 1.45 and 2.25 eV and average optical absorption coefficient was found to be greater than 105 cm-1. Hall measurements exhibited that all the deposited Cu2Zn1-xSnxS4 films were p type and the resistivity lies between 10.9 ×10-2Ωcm and 149.6 × 10-2Ωcm .

Ion implantation in superconducting niobium and Nb3 Sn thin films: adjustment of Josephson microbridges and SQUID devices

International Nuclear Information System (INIS)

Robic, J.Y.; Piaguet, J.; Duret, D.; Veler, J.C.; Veran, J.L.; Zenatti, D.

1978-01-01

The principles of operation of Josephson junctions and SQUIDS are resumed. An ion implantation technique for the adjustment of the critical current is presented. High quality superconducting thin films were obtained by electron gun evaporation of niobium on heated substrates. Polycrystalline Nb 3 Sn was made by annealing (1000 K, 10 -6 Torr) a multilayer structure of successively evaporated niobium and thin films. Selected ions (helium, neon, argon) were implanted at doses ranging from 10 13 to 10 17 cm -2 . After implantation the critical temperature, the critical current and the normal resistivity were measured on special photoetched geometries. The variations of these electrical properties depend on the nuclear energy loss. The critical temperature of Nb 3 Sn is decreased by ion implantation and can be increased again by a new annealing. The parameters of the ion implantation were defined in order to obtain a critical temperature slightly higher than the operating temperature. The geometries of the microbridges and the implanted areas where then chosen to obtain appropriate criticals currents (approximately 10 μA) at the operating temperature. The obtained microbridges were used as junction elements in superconducting quantum interference devices (SQUID)

Preparation of PtSnCu/C and PtSn/C electrocatalysts and activation by dealloying processes for ethanol electrooxidation

International Nuclear Information System (INIS)

Crisafulli, Rudy

2013-01-01

PtSnCu/C (with different Pt:Sn:Cu atomic ratios) and PtSn/C (50:50) electrocatalysts were prepared by borohydride (BR) and alcohol-reduction (AR) processes using H 2 PtCl 6 .6H 2 O, SnCl 2 .2H 2 O and CuCl 2 .2H 2 O as metal sources, NaBH 4 and ethylene glycol as reducing agents, 2-propanol and ethylene glycol/water as solvents and carbon black as support. In a further step, these electrocatalysts were activated by chemical (CD) and electrochemical (ED) dealloying processes through acid treatment and thin porous coating technique, respectively. These materials were characterized by energy dispersive X-ray, Xray diffraction, transmission electron microscopy, line scan energy dispersive Xray and cyclic voltammetry. Electrochemical studies for ethanol electro-oxidation were performed by cyclic voltammetry, chronoamperometry and in single Direct Ethanol Fuel Cell using Membrane Electrode Assembly (MEA). The anodic effluents were analysed by gas chromatography. The X-ray diffractograms of the as-synthesized electrocatalysts showed the typical face-centered cubic structure (FCC) of platinum and its alloys. After dealloying, the X-ray diffractograms showed that the Pt FCC structure was preserved. The crystallite sizes of the assynthesized electrocatalysts were in the range of PtSnCu/C (50:40:10) AR/ED > PtSnCu/C (50:10:40) BR/CD. PtSn/C (50:50) BR/CD, PtSnCu/C (50:10:40) BR/CD, PtSnCu/C (50:40:10) AR/CD electrocatalysts and Pt/C BASF, PtSn/C (75:25) BASF commercial electrocatalysts were tested in single Direct Ethanol Fuel Cell. The results showed the following performance for ethanol electro-oxidation: PtSn/C (50:50) BR/CD > PtSnCu/C (50:40:10) AR/CD > PtSnCu/C > PtSn/C (75:25) BASF > PtSnCu/C (50:10:40) BR/CD > Pt/C BASF. (author)

Hairy foam" : carbon nanofibers grown on solid foam. A fully accessible, high surface area, graphitic catalyst support

NARCIS (Netherlands)

Wenmakers, P.W.A.M.; Schaaf, van der J.; Kuster, B.F.M.; Schouten, J.C.

2008-01-01

This paper describes the synthesis of carbon nanofibers (CNFs) on solid carbon foam ("Hairy Foam") by catalytic decompn. of ethylene. The effect of nickel loading on fiber diam. and morphol., CNF coverage, and fiber layer thickness is studied using SEM and N2/Kr-physisorption. The surface area

Study of structural and morphological properties of thermally evaporated Sn{sub 2}Sb{sub 6}S{sub 11} thin films

Energy Technology Data Exchange (ETDEWEB)

Ben Mehrez, N., E-mail: najia.benmehrez@gmail.com [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Khemiri, N. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Kanzari, M. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Institut Préparatoire aux Etudes d’Ingénieurs de Tunis Montfleury, Université de Tunis (Tunisia)

2016-10-01

In this study, we report the structural and morphological properties of the new material Sn{sub 2}Sb{sub 6}S{sub 11} thin films prepared on glass substrates by vacuum thermal evaporation at various substrate temperatures (30, 60, 100, 140, 180 and 200 °C). Sn{sub 2}Sb{sub 6}S{sub 11} ingot was synthesized by the horizontal Bridgman technique. The structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The films were characterized for their structural properties by using XRD. All films were polycrystalline in nature. The variations of the structural parameters of the films with the substrate temperature were investigated. The results show that the crystallite sizes increase as the substrate temperature increases. The morphological properties of the films were analyzed by atomic force microscopy (AFM). The roughness and the topography of the surface of the films strongly depend on the substrate temperature. - Highlights: • Sn{sub 2}Sb{sub 6}S{sub 11} powder was successfully synthesized by the horizontal Bridgman technique. • Sn{sub 2}Sb{sub 6}S{sub 11} films were grown by thermal evaporation at different substrate temperatures. • Structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were investigated. • The effect of the substrate temperature on structural and morphological of Sn{sub 2}Sb{sub 6}S{sub 11} films properties was studied.

Construction of SnO2?Graphene Composite with Half-Supported Cluster Structure as Anode toward Superior Lithium Storage Properties

OpenAIRE

Zhu, Chengling; Chen, Zhixin; Zhu, Shenmin; Li, Yao; Pan, Hui; Meng, Xin; Imtiaz, Muhammad; Zhang, Di

2017-01-01

Inspired by nature, herein we designed a novel construction of SnO2 anodes with an extremely high lithium storage performance. By utilizing small sheets of graphene oxide, the partitioned-pomegranate-like structure was constructed (SnO2@C@half-rGO), in which the porous clusters of SnO2 nanoparticles are partially supported by reduced graphene oxide sheets while the rest part is exposed (half-supported), like partitioned pomegranates. When served as anode for lithium-ion batteries, SnO2@C@half...

Study of Sn100-xMnx amorphous system by 119Sn Moessbauer spectroscopy

International Nuclear Information System (INIS)

Drago, V.

1986-01-01

Thin films of Sn 100-x Mn x amorphous alloys with large range of concentrations were procedure by vapor condensation technique on substrates at temperatures near to liquid helium. The magnetic and paramagnetic hyperfine spectra, and the ordering temperatures were measured by 119 Sn Moessbauer effect. The electrical resistivity was used for characterizing the amorphous state. All the measurements were done 'in situ'. A magnetic phase diagram is proposed. (M.C.K.) [pt

Photocatalytic performance of Sn-doped and undoped TiO2 nanostructured thin films under UV and vis-lights

International Nuclear Information System (INIS)

Arpac, E.; Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, Nadir; Sayilkan, H.

2007-01-01

Sn-doped and undoped nano-TiO 2 particles have been synthesized by hydrotermal process without solvent at 200 deg. C in 1 h. Nanostructure-TiO 2 based thin films have been prepared on glass substrate by spin-coating technique. The structure, surface morphology and optical properties of the thin films and the particles have been investigated by element analysis and XRD, SEM, BET and UV-vis-NIR techniques. The photocatalytic performance of the films were tested for degradation of Malachite Green dye in solution under UV and vis-lights. The results showed that (a) hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water, (b) the coated surfaces have nearly super-hydrophilic properties and (c) the doping of transition metal ion efficiently improved the photocatalytic performance of the TiO 2 thin film

Nanosized Thin SnO2 Layers Doped with Te and TeO2 as Room Temperature Humidity Sensors

Directory of Open Access Journals (Sweden)

Biliana Georgieva

2014-05-01

Full Text Available In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques—SEM, EDS in SEM, TEM, SAED, AES and electrical measurements—are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio RSn/Te and the evaporation conditions. It is shown that as-deposited layers with RSn/Te ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature—very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers’ surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties.

Structural, optical and thermal properties of {beta}-SnS{sub 2} thin films prepared by the spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Khelia, C.; Ben Nasrallah, T.; Amlouk, M.; Belgacem, S. [Faculte des Sciences, Tunis (Tunisia). Lab. de Physique de la Matiere Condensee; Maiz, F. [Equipe de Photothermique de Nabeul, Inst. Preparatoire aux Etudes d' Ingenieur de Nabeul (Tunisia); Mnari, M. [Lab. de Chimie Analytique, Campus Univ., Tunis (Tunisia)

2000-03-01

Tin disulfide {beta}-SnS{sub 2} thin films have been prepared on pyrex substrates by the spray pyrolysis technique using tin tetrachloride and thiourea as starting materials. The depositions were carried out in the range of substrate temperatures from 240 to 400 C. Highly c-axis oriented {beta}-SnS{sub 2} films, having a strong (001) X-ray diffraction line are obtained at temperature 280 C and using concentration ratio in solution R = [S]/[Sn] = 2.5. Films surfaces were analyzed by contact atomic force microscopy (AFM) and by scanning electron microscopy (SEM) in order to understand the effect of the deposited temperature on the surface structure. On the other hand, from transmission and reflection spectra, the band gap energy determined is about 2.71 eV. Finally using the photodeflection spectroscopy technique, the thermal conductivity K{sub c} and diffusivity D{sub c} were obtained. Their values are 10 Wm{sup -1}K{sup -1} and 10{sup -5} m{sup 2}s{sup -1} respectively. (orig.)

Thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films and superlattices with reduced thermal conductivities

International Nuclear Information System (INIS)

Jaeger, Tino

2013-01-01

Rising energy costs and enhanced CO 2 emission have moved research about thermoelectric (TE) materials into focus. The suitability of a material for usage in TE devices depends on the figure of merit ZT and is equal to α 2 σTκ -1 including Seebeck coefficient α, conductivity σ, temperature T and thermal conductivity κ. Without affecting the power factor α 2 σ, using nanostructuring, ZT should here be increased by a depressed thermal conductivity. As half-Heusler (HH) bulk materials, the TE properties of TiNiSn and Zr 0.5 Hf 0.5 NiSn have been extensively studied. Here, semiconducting TiNiSn and Zr 0.5 Hf 0.5 NiSn thin films were fabricated for the first time by dc magnetron sputtering. On MgO (100) substrates, strongly textured polycrystalline films were obtained at substrate temperatures of about 450 C. The film consisted of grains with an elongation perpendicular to the surface of 55 nm. These generated rocking curves with FWHMs of less than 1 . Structural analyses were performed by X ray diffraction (XRD). Having deposition rates of about 1 nms -1 within shortest time also films in the order of microns were fabricated. For TiNiSn the highest in-plane power factor of about 0.4 mWK -2 m -1 was measured at about 550 K. In addition, at room temperature a cross-plane thermal conductivity of 2.8 Wm -1 K -1 was observed by the differential 3ω method. Because the reduction of thermal conductivity by mass fluctuation is well-known and interface scattering of phonons is expected, superlattices (SL) were fabricated. Therefore, TiNiSn and Zr 0.5 Hf 0.5 NiSn were successively deposited. While the sputter cathodes were continuously running, for fabrication of SLs the substrates were moved from one to another. The high crystal quality of the SLs and the sharp interfaces were proven by satellite peaks (XRD) and Scanning Transmission Electron Microscopy (STEM). For a SL with a periodicity of 21 nm (TiNiSn and Zr 0.5 Hf 0.5 NiSn each 15 nm) at a temperature of 550 K an

CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

Energy Technology Data Exchange (ETDEWEB)

Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

2016-08-30

Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

The effect of nanoparticle aggregation on surfactant foam stability.

Science.gov (United States)

AlYousef, Zuhair A; Almobarky, Mohammed A; Schechter, David S

2018-02-01

The combination of nanoparticles (NPs) and surfactant may offer a novel technique of generating stronger foams for gas mobility control. This study evaluates the potential of silica NPs to enhance the foam stability of three nonionic surfactants. Results showed that the concentration of surfactant and NPs is a crucial parameter for foam stability and that there is certain concentrations for strong foam generation. A balance in concentration between the nonionic surfactants and the NPs can enhance the foam stability as a result of forming flocs in solutions. At fixed surfactant concentration, the addition of NPs at low to intermediate concentrations can produce a more stable foam compared to the surfactant. The production of small population of flocs as a result of mixing the surfactant and NPs can enhance the foam stability by providing a barrier between the gas bubbles and delaying the coalescence of bubbles. Moreover, these flocs can increase the solution viscosity and, therefore, slow the drainage rate of thin aqueous film (lamellae). The measurements of foam half-life, bubble size, and mobility tests confirmed this conclusion. However, the addition of more solid particles or surfactant might have a negative impact on foam stability and reduce the maximum capillary pressure of coalescence as a result of forming extensive aggregates. Copyright © 2017 Elsevier Inc. All rights reserved.

Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films.

Science.gov (United States)

Wang, W Y; Tang, Y L; Zhu, Y L; Suriyaprakash, J; Xu, Y B; Liu, Y; Gao, B; Cheong, S-W; Ma, X L

2015-11-03

Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a  . Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.

Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

Science.gov (United States)

Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

2013-05-22

Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

Nanocrystalline Cu{sub 2}ZnSnSe{sub 4} thin films for solar cells application: Microdiffraction and structural characterization

Energy Technology Data Exchange (ETDEWEB)

Quiroz, Heiddy P., E-mail: hpquirozg@unal.edu.co; Dussan, A., E-mail: adussanc@unal.edu.co [Departmento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá 11001 (Colombia)

2016-08-07

This work presents a study of the structural characterization of Cu{sub 2}ZnSnSe{sub 4} (CZTSe) thin films by X-ray diffraction (XRD) and microdiffraction measurements. Samples were deposited varying both mass (M{sub X}) and substrate temperature (T{sub S}) at which the Cu and ZnSe composites were evaporated. CZTSe samples were deposited by co-evaporation method in three stages. From XRD measurements, it was possible to establish, with increased Ts, the presence of binary phases associated with the quaternary composite during the material's growth process. A stannite-type structure in Cu{sub 2}ZnSnSe{sub 4} thin films and sizes of the crystallites varying between 30 and 40 nm were obtained. X-ray microdiffraction was used to investigate interface orientations and strain distributions when deposition parameters were varied. It was found that around the main peak, 2ϴ = 27.1°, the Cu{sub 1.8}Se and ZnSe binary phases predominate, which are formed during the subsequent material selenization stage. A Raman spectroscopy study revealed Raman shifts associated with the binary composites observed via XRD.

Metal-support interaction: The key factor governing activity of Pd/SnO2 catalyst for denitration of ground water

Directory of Open Access Journals (Sweden)

Bošković Goran C.

2008-01-01

Full Text Available Two mesoporous nanocristalline Pd/SnO2 catalysts were prepared by modified solgel technique differing in the pH conditions (pH = 2 and 9.5 of the synthesis of their supports. Samples achieved different activity and selectivity in water denitration reaction using hydrogen. XPS results of reduced samples indicate a strong interaction between the Pd and the Sn possibly as a result of electron shift from Sn to Pd. The solid solution of Pd2+ and SnO2 is formed by taking O from the surface of the support. In such a way some SnO2-X species may stay onto the surface and be responsible for its pronounced activity.

Photocatalytic performance of Sn-doped TiO2 nanostructured mono and double layer thin films for Malachite Green dye degradation under UV and vis-lights

International Nuclear Information System (INIS)

Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, N.; Arpac, E.; Sayilkan, H.

2007-01-01

Nanostructure Sn 4+ -doped TiO 2 based mono and double layer thin films, contain 50% solid ratio of TiO 2 in coating have been prepared on glass surfaces by spin-coating technique. Their photocatalytic performances were tested for degradation of Malachite Green dye in solution under UV and vis irradiation. Sn 4+ -doped nano-TiO 2 particle a doping ratio of about 5[Sn 4+ /Ti(OBu n ) 4 ; mol/mol%] has been synthesized by hydrotermal process at 225 deg. C. The structure, surface and optical properties of the thin films and/or the particles have been investigated by XRD, BET and UV/vis/NIR techniques. The results showed that the double layer coated glass surfaces have a very high photocatalytic performance than the other one under UV and vis lights. The results also proved that the hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water. The results also reveal that the coated surfaces have hydrophilic property

Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

International Nuclear Information System (INIS)

Tiwari, Devendra; Chaudhuri, Tapas K.; Ray, Arabinda; Tiwari, Krishan Dutt

2014-01-01

A process for deposition of Cu 2 ZnSnS 4 (CZTS) films using replacement of Zn 2+ in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 10 17 cm −3 and 1.4 cm 2 V −1 s −1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO 2 :In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm 2 , respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. - Highlights: • Pure kesterite Cu 2 ZnSnS 4 thin films deposited by replacement reaction route • Energy band gap of films is 1.45 eV. • p-type films with conductivity of 4.6 S/cm and mobility of 1.4 cm 2 S −1 V −1 • Fabrication of Graphite/Cu 2 ZnSnS 4 /CdS/ZnO/SnO 2 :In/Glass solar cell • Solar cell delivered efficiency of 6.17% with high fill factor of 0.62

Investigation of optimum annealing parameters for formation of dip coated Cu{sub 2}ZnSnS{sub 4} thin film

Energy Technology Data Exchange (ETDEWEB)

Chaudhari, Sushmita; Kannan, P.K.; Dey, Suhash R., E-mail: suhash@iith.ac.in

2016-08-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) is most attractive absorber material for inorganic solar cell applications because of its cost effective and ecofriendly nature. To obtain phase pure CZTS film, effects of annealing parameters on synthesis of CZTS thin film are investigated. CZTS films are deposited through dip coating method followed by heat treatment to form crystalline CZTS thin films. Factors influencing the crystallinity, morphology and composition of the films such as annealing temperature, time, rate and atmosphere are studied through X-Ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy and Energy Dispersive X-Ray Spectroscopy. After numerous experiments of synthesis of CZTS in different annealing conditions and its characterization, it is observed that 1.4 eV band gap CZTS thin film of kesterite structure is obtained by annealing the film in nitrogen atmosphere for 60 min at 300 °C with 10 °C/min ramping rate. - Highlights: • Dip coated Cu{sub 2}ZnSnS{sub 4} film is developed using non-hydrazine based precursor solution. • Optimum annealing condition to achieve best crystalline film is studied. • Optimal condition is 300 °C in N{sub 2} atmosphere for 60 min at 10 °C/min ramping rate. • Bandgap of prepared films is 1.4 eV, suitable for solar cell applications.

SN Refsdal

DEFF Research Database (Denmark)

Kelly, P. L.; Brammer, G.; Selsing, J.

2016-01-01

(SNe), and we find strong evidence for a broad H-alpha P-Cygni profile in the HST grism spectrum at the redshift (z = 1.49) of the spiral host galaxy. SNe IIn, powered by circumstellar interaction, could provide a good match to the light curve of SN Refsdal, but the spectrum of a SN IIn would not show...... in the rest frame, provide additional evidence that supports the SN 1987A-like classification. In comparison with other examples of SN 1987A-like SNe, SN Refsdal has a blue B-V color and a high luminosity for the assumed range of potential magnifications. If SN Refsdal can be modeled as a scaled version of SN...

Electrochemical synthesis of nanostructured Se-doped SnS: Effect of Se-dopant on surface characterizations

International Nuclear Information System (INIS)

Kafashan, Hosein; Azizieh, Mahdi; Balak, Zohre

2017-01-01

Highlights: • Nanostructured SnS_1_-_xSe_x thin films were prepared by using electrodeposition method. • The XRD patterns obviously showed that the synthesized films were polycrystalline. • The PL spectra of SnS_1_-_xSe_x thin films showed four emission peaks. • The UV–vis spectra shows a variation in the optical band gap energy of SnS_1_-_xSe_x thin films from 1.22 to 1.65 eV. • SnS_1_-_xSe_x thin films would be suitable for use as absorber layers. - Abstract: SnS_1_-_xSe_x nanostructures with different Se-dopant concentrations were deposited on fluorine doped tin oxide (FTO) substrate through cathodic electrodeposition technique. The pH, temperature, applied potential (E), and deposition time remained were 2.1, 60 °C, −1 V, and 30 min, respectively. SnS_1_-_xSe_x nanostructures were characterized using X-ray diffraction (XRD), field emission scanning electron microcopy (FESEM), energy dispersive X-ray spectroscopy (EDX), room temperature photoluminescence (PL), and UV–vis spectroscopy. The XRD patterns revealed that the SnS_1_-_xSe_x nanostructures were polycrystalline with orthorhombic structure. FESEM showed various kinds of morphologies in SnS_1_-_xSe_x nanostructures due to Se-doping. PL and UV–vis spectroscopy were used to evaluate the optical properties of SnS_1_-_xSe_x thin films. The PL spectra of SnS_1_-_xSe_x nanostructures displayed four emission peaks, those are a blue, a green, an orange, and a red emission. UV–vis spectra showed that the optical band gap energy (E_g) of SnS_1_-_xSe_x nanostructures varied between 1.22–1.65 eV, due to Se-doping.

Electronegativity-dependent tin etching from thin films

Energy Technology Data Exchange (ETDEWEB)

Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

2016-07-15

The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

Deposition and characterization of spray pyrolysed p-type Cu2SnS3 thin film for potential absorber layer of solar cell

Science.gov (United States)

Thiruvenkadam, S.; Sakthi, P.; Prabhakaran, S.; Chakravarty, Sujay; Ganesan, V.; Rajesh, A. Leo

2018-06-01

Thin film of ternary Cu2SnS3 (CTS), a potential absorber layer for solar cells was successfully deposited by chemical spray pyrolysis technique. The GIXRD pattern revealed that the film having tetragonal Cu2SnS3 phase with the preferential orientation along (112), (200), (220) and (312) plane and it is further confirmed using Raman spectroscopy by the existence of Raman peak at 320 cm-1. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 28.8 nm. The absorption coefficient was found to be greater than the order of 105 cm-1 and bandgap of 1.70 eV. Hall effect measurement indicates the p type nature of the film with a hole concentration of 1.03 × 1016cm-3 and a hall mobility of 404 cm2/V. The properties of CTS thin film confirmed suitable to be a potential absorber layer material for photovoltaic applications.

Fabrication of high quality Cu2SnS3 thin film solar cell with 1.12% power conversion efficiency obtain by low cost environment friendly sol-gel technique

Science.gov (United States)

Chaudhari, J. J.; Joshi, U. S.

2018-03-01

Cu2SnS3 (CTS) is an emerging ternery chalcogenide material with great potential application in thin film solar cells. We present here high quality Cu2SnS3 thin films using a facile spin coating method. The as deposited films of CTS were sulphurized in a graphite box using tubular furnace at 520 °C for 60 min at the rate of 2.83 °C min-1 in argon atmosphere. X-ray diffraction (XRD) and Raman spectroscopy studies confirm tetragonal phase and absence of any secondary phase in sulphurized CTS thin films. X-ray photoelectron spectroscopy (XPS) demonstrates that Cu and Sn are in +1 and +4 oxidation state respectively. Surface morphology of CTS films were analyzed by field emission scanning electron microscope and atomic force microscope (AFM), which revealed a smooth surface with roughness (RMS) of 6.32 nm for sulphurized CTS film. Hall measurements confirmed p-type conductivity with hole concentartion of sulphurized CTS thin film is of 6.5348 × 1020 cm-3. UV-vis spectra revealed a direct energy band gap varies from 1.45 eV to 1.01 eV for as-deposited and sulphurized CTS thin film respectively. Such band gap values are optimum for semiconductor material as an absorber layer of thin film solar cell. The CTS thin film solar cell had following structure: SLG/FTO/ZnO/CTS/Al with short circuit current density of (Jsc) of 11.6 mA cm-2, open circuit voltage (Voc) of 0.276 V, active area of 0.16 cm2, fill factor (FF) of 35% and power conversion efficiency of 1.12% under AM 1.5 (100 mW cm-2) illumination in simulated standard test conditions.

Effect of Mn doping on the structural, magnetic, optical and electrical properties of ZrO_2–SnO_2 thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Anitha, V.S.; Sujatha Lekshmy, S.; Joy, K.

2016-01-01

Manganese doped ZrO_2–SnO_2 (ZrO_2–SnO_2: Mn) nanocomposite thin films were prepared using sol – gel dip coating technique. The structural, morphological, magnetic, optical and electrical properties of the films were studied for undoped and different (15 mol %) manganese doping concentrations. X-ray diffraction pattern (XRD) of films showed the formation of tetragonal phase of SnO_2 and orthorhombic ZrSnO_4. Decrease in crystallinity with increase of Mn concentration was observed for the films. Scanning electron microscopy (SEM) showed the formation of grain growth with an increase in Mn concentration. X-ray photo electron spectroscopy (XPS) confirmed the presence of Zr"4"+, Sn"4"+ and Mn"2"+ ion in ZrO_2–SnO_2: Mn films. Vibrating sample magnetometer (VSM) measurements reveal the presence of magnetic properties in Mn doped nanocomposite thin films. Antiferromagnetic interactions were observed for 5 mol % Mn doping. An average transmittance >80% (UV - Vis region) was observed for all the films. Band gap of the films decreased from 4.78 to 4.41 eV with increase in Mn concentration. Photoluminescence (PL) spectra of the films exhibited emission peaks in visible region of the electromagnetic spectra. Conductivity of the film increased up to 3 mol % Mn doping and then decreased. - Highlights: • ZrO_2–SnO_2: Mn films were deposited onto quartz substrates by Sol –Gel dip coating. • Structural, magnetic, optical and electrical properties of the films were analyzed. • Optical band gap decreased with increase in manganese concentration. • Ferromagnetic behavior was observed for Mn doped films. • These ferromagnetic ZrO_2–SnO_2: Mn films find application in spintronic devices.

Cu{sub 2}ZnSnS{sub 4} thin film solar cells from electroplated precursors: Novel low-cost perspective

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany); Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R. [Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstr. 20, D-10553 Berlin (Germany)

2009-02-02

Thin-film solar cells based on Cu{sub 2}ZnSnS{sub 4} (CZTS) absorbers were fabricated successfully by solid-state reaction in H{sub 2}S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm{sup 2}) efficiency of 3.4% is achieved (V{sub oc} = 563 mV, j{sub sc} = 14.8 mA/cm{sup 2}, FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 {mu}m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu{sub 2}SnS{sub 3}, close to the interface Mo/CZTS.

Nanoscale semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Lin Shaoxiong; Zhang Xin; Shi Xuezhao; Wei Jinping; Lu Daban; Zhang Yuzhen; Kou Huanhuan [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Wang Chunming, E-mail: wangcm@lzu.edu.cn [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

2011-04-15

In this paper the fabrication and characterization of IV-VI semiconductor Pb{sub 1-x}Sn{sub x}Se (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn ...), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb{sub 1-x}Sn{sub x}Se is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.

Preparation of highly dispersed Ru-Sn bimetallic supported catalysts from the single source precursors Cp(PPh32Ru-SnX3 (X = Cl or Br

Directory of Open Access Journals (Sweden)

Ana Cláudia Bernardes Silva

2003-06-01

Full Text Available In this work highly dispersed Ru-Sn bimetallic catalysts have been prepared from organobimetallic Cp(PPh32Ru-SnX3 (X = Cl or Br complexes. These single source precursors can be easily impregnated in high surface area supports, such as activated carbon and sol-gel SiO2, and upon controlled thermal treatment the ligands are released as volatile products resulting in the formation of the bimetallic system Ru-Sn. Catalytic reactions, such as hydrodechlorination of CCl4 and chlorobenzene and TPR (Temperature Programmed Reduction experiments carried out with these RuSn catalysts suggested a strong interaction between Ruthenium and Tin. Mössbauer measurements showed that these materials when exposed to air are immediately oxidized to form Sn (IV. It was shown that upon controlled reduction conditions with H2 it is possible to reduce selectively Sn to different oxidation states and different phases. The Sn oxidation state showed significant effect on the catalytic hydrogenation of 1,5-cyclooctadiene. The use of these single source precursors with a controlled decomposition/reduction procedure allows the preparation of unique catalysts with an intimate interaction between the components ruthenium and tin and the possibility of varying the Sn oxidation state around the Ru metal.

Device quality InO{sub x}:Sn and InO{sub x} thin films deposited at room temperature with different rf-power densities

Energy Technology Data Exchange (ETDEWEB)

Amaral, A., E-mail: ana.de.amaral@ist.utl.pt [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Brogueira, P. [Dept. de Fisica and ICEMS, Instituto Superior Tecnico/Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Conde, O. [Universidade de Lisboa, Dept. de Fisica and ICEMS, Campo Grande, 1749-016 Lisboa (Portugal); Lavareda, G. [Dept. de Ciencia dos Materiais and CTS, FCT-UNL, 2829-516 Caparica (Portugal); Nunes de Carvalho, C. [Dept. de Ciencia dos Materiais, FCT-UNL and ICEMS, 2829-516 Caparica (Portugal)

2012-12-30

The influence of tin doping on the electrical, optical, structural and morphological properties of indium oxide films produced by radio-frequency plasma enhanced reactive thermal evaporation is studied, as transport properties are expected to improve with doping. Undoped and tin doped indium oxide thin films are deposited at room temperature using both pure In rods and (95-80) % In:(5-20) % Sn alloys as evaporation sources and 19.5 mW/cm{sup 2} and 58.6 mW/cm{sup 2} as rf-power densities. The two most important macroscopic properties - visible transparency and electrical resistivity - are relatively independent of tin content (0-20%). Visible transmittance of about 75% and electrical resistivity around 5 Multiplication-Sign 10{sup -4} {Omega}{center_dot}cm can be observed in the films. The structural features are similar for all samples. Nevertheless, the surface morphology characterization shows that the homogeneity of the films varies according to the tin content. Moreover this variation is a balance between the rf-power and the tin content in the alloy: i) films with small and compact grains are produced at 58.6 mW/cm{sup 2} from a 5% Sn alloy or at 19.5 mW/cm{sup 2} from a 15% Sn alloy and consequently, smooth surfaces with reduced roughness and similar grain size and shape are obtained; ii) films showing the presence of aggregates randomly distributed above a tissue formed of thinner grains and higher roughness are produced at the other deposition conditions. - Highlights: Black-Right-Pointing-Pointer InO{sub x}:Sn and InO{sub x} thin films were deposited at room temperature. Black-Right-Pointing-Pointer Transparency and electrical resistivity are relatively independent of Sn content. Black-Right-Pointing-Pointer Device quality material was obtained. Black-Right-Pointing-Pointer The surface morphology homogeneity of the films varies with tin content.

Molded ultra-low density microcellular foams

International Nuclear Information System (INIS)

Rand, P.B.; Montoya, O.J.

1986-07-01

Ultra-low density (< 0.01 g/cc) microcellular foams were required for the NARYA pulsed-power-driven x-ray laser development program. Because of their extreme fragility, molded pieces would be necessary to successfully field these foams in the pulsed power accelerator. All of the foams evaluated were made by the thermally induced phase separation technique from solutions of water soluble polymers. The process involved rapidly freezing the solution to induce the phase separation, and then freeze drying to remove the water without destroying the foam's structure. More than sixty water soluble polymers were evaluated by attempting to make their solutions into foams. The foams were evaluated for shrinkage, density, and microstructure to determine their suitability for molding and meeting the required density and cell size requirements of 5.0 mg/cc and less than twenty μmeters. Several promising water soluble polymers were identified including the polyactylic acids, guar gums, polyactylamide, and polyethylene oxide. Because of thier purity, structure, and low shrinkage, the polyacrylic acids were chosen to develop molding processes. The initial requirements were for 2.0 cm. long molded rods with diameters of 1.0, 2.0. and 3.0 mm. These rods were made by freezing the solution in thin walled silicon rubber molds, extracting the frozen preform from the mold, and then freeze drying. Requirements for half rods and half annuli necessitated using aluminum molds. Again we successfully molded these shapes. Our best efforts to date involve molding annuli with 3.0 mm outside diameters and 2.0 mm inside diameters

Nanocrystalline sol-gel TiO{sub 2}-SnO{sub 2} coatings: Preparation, characterization and photo-catalytic performance

Energy Technology Data Exchange (ETDEWEB)

Kaleji, Behzad Koozegar [Department of Materials Engineering, Faculty of Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran (Iran, Islamic Republic of); Sarraf-Mamoory, Rasoul, E-mail: rsarrafm@modares.ac.ir [Department of Materials Engineering, Faculty of Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran (Iran, Islamic Republic of)

2012-02-15

Highlights: Black-Right-Pointing-Pointer SnO{sub 2} additive enhanced significantly photo-catalytic properties of TiO{sub 2} based thin film for remove of organic compounds. Black-Right-Pointing-Pointer Structural and optical properties are dependent on dopant concentration. Black-Right-Pointing-Pointer TiO{sub 2}-SnO{sub 2} nanocrystalline thin film is promising for photocatalytic properties in visible light. -- Abstract: In this study, preparation of SnO{sub 2} (0-30 mol% SnO{sub 2})-TiO{sub 2} dip-coated thin films on glazed porcelain substrates via sol-gel process has been investigated. The effects of SnO{sub 2} on the structural, optical, and photo-catalytic properties of applied thin films have been studied by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Surface topography and surface chemical state of thin films were examined by atomic force microscopy and X-ray photoelectron spectroscopy. XRD patterns showed an increase in peak intensities of the rutile crystalline phase by increasing the SnO{sub 2} content. The prepared Sn doped TiO{sub 2} photo-catalyst films showed optical absorption in the visible light area exhibited excellent photo-catalytic ability for the degradation of methylene blue under visible light irradiation. Best photo-catalytic activity of Sn doped TiO{sub 2} thin films was measured in the TiO{sub 2}-15 mol% SnO{sub 2} sample by the Sn{sup 4+} dopants presented substitution Ti{sup 4+} into the lattice of TiO{sub 2} increasing the surface oxygen vacancies and the surface hydroxyl groups.

Laser-supported ionization wave in under-dense gases and foams

International Nuclear Information System (INIS)

Gus'kov, S. Yu.; Limpouch, J.; Nicolaie, Ph.; Tikhonchuk, V. T.

2011-01-01

Propagation of laser-supported ionization wave in homogeneous and porous materials with a mean density less than the critical plasma density is studied theoretically in the one-dimensional geometry. It is shown that the velocity of the ionization wave in a foam is significantly decreased in comparison with the similar wave in a homogeneous fully ionized plasma of the same density. That difference is attributed to the ionization and hydro-homogenization processes forming an under-critical density environment in the front of ionization wave. The rate of energy transfer from laser to plasma is found to be in a good agreement with available experimental data.

Electrochemical and optical properties of CeO2-SnO2 and CeO2-SnO2:X (X = Li, C, Si films

Directory of Open Access Journals (Sweden)

Berton Marcos A.C.

2001-01-01

Full Text Available Thin solid films of CeO2-SnO2 (17 mol% Sn and CeO2-SnO2:X (X = Li, C and Si were prepared by the sol-gel route, using an aqueous-based process. The addition of Li, C and Si to the precursor solution leads to films with different electrochemical performances. The films were deposited by the dip-coating technique on ITO coated glass (Donnelly Glass at a speed of 10 cm/min and submitted to a final thermal treatment at 450 °C during 10 min in air. The electrochemical and optical properties of the films were determined from the cyclic voltammetry and chronoamperometry measurements using 0.1 M LiOH as supporting electrolyte. The ion storage capacity of the films was investigated using in situ spectroelectrochemical method and during the insertion/extraction process the films remained transparent. The powders were characterized by thermal analysis (DSC/TGA and X-ray diffraction.

Impact of sodium on the secondary phases and current pathway in Cu{sub 2}(Zn,Sn)Se{sub 4} thin film solar cell

Energy Technology Data Exchange (ETDEWEB)

Lin, Yi-Cheng, E-mail: ielinyc@cc.ncue.edu.tw [Department of Mechatronics Engineering, National Changhua University of Education, Changhua, Taiwan (China); Lai, Chien-Mu [Department of Mechatronics Engineering, National Changhua University of Education, Changhua, Taiwan (China); Hsu, Hung-Ru [Green Energy & Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China)

2017-05-01

In this study, we investigated the influence of Na content on secondary phases and current pathway in Cu{sub 2}(Zn,Sn)Se{sub 4} (CZTSe) thin film solar cells with the following structure: Ti/Mo:Na/Mo/CZTSe/CdS/i-ZnO/ZnO:Al/Al. The application of Na-doped Mo target as a source of sodium. Experimental results demonstrate that increasing the Na content leads to an increase in the quantity of secondary phase SnSe{sub 2} on the surface of the absorber layer; however, it did not appear to affect the secondary phases of Cu{sub 2}SnSe{sub 3} (CTSe) or ZnSe. Excessive quantities of Na were shown to have an adverse effect on device efficiency. Our results using conductive atomic force microscopy (C-AFM) revealed that an increase in the quantity of secondary phase SnSe{sub 2} can shift the current pathway on the surface of CZTSe from CZTSe grain boundaries (GBs) to the SnSe{sub 2} grains. The role of secondary phase SnSe{sub 2} of the CZTSe acted as a channel for the current flow, which results in high leakage current and low device efficiency. - Highlights: • Increasing the Na content leads to an increase in the quantity of secondary phase SnSe{sub 2}. • An increase of secondary phase SnSe{sub 2} can shift the current pathway from CZTSe grain boundaries to the SnSe{sub 2} grains. • The secondary phase SnSe{sub 2} acted as a channel for the current flow, which results in high leakage current.

Ni–Sn-Supported ZrO2 Catalysts Modified by Indium for Selective CO2 Hydrogenation to Methanol

KAUST Repository

Hengne, Amol Mahalingappa

2018-04-02

Ni and NiSn supported on zirconia (ZrO2) and on indium (In)-incorporated zirconia (InZrO2) catalysts were prepared by a wet chemical reduction route and tested for hydrogenation of CO2 to methanol in a fixed-bed isothermal flow reactor at 250 °C. The mono-metallic Ni (5%Ni/ZrO2) catalysts showed a very high selectivity for methane (99%) during CO2 hydrogenation. Introduction of Sn to this material with the following formulation 5Ni5Sn/ZrO2 (5% Ni-5% Sn/ZrO2) showed the rate of methanol formation to be 0.0417 μmol/(gcat·s) with 54% selectivity. Furthermore, the combination NiSn supported on InZrO2 (5Ni5Sn/10InZrO2) exhibited a rate of methanol formation 10 times higher than that on 5Ni/ZrO2 (0.1043 μmol/(gcat·s)) with 99% selectivity for methanol. All of these catalysts were characterized by X-ray diffraction, high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM), X-ray photoelectron spectroscopy, CO2-temperature-programmed desorption, and density functional theory (DFT) studies. Addition of Sn to Ni catalysts resulted in the formation of a NiSn alloy. The NiSn alloy particle size was kept in the range of 10–15 nm, which was evidenced by HRTEM study. DFT analysis was carried out to identify the surface composition as well as the structural location of each element on the surface in three compositions investigated, namely, Ni28Sn27, Ni18Sn37, and Ni37Sn18 bimetallic nanoclusters, and results were in agreement with the STEM and electron energy-loss spectroscopy results. Also, the introduction of “Sn” and “In” helped improve the reducibility of Ni oxide and the basic strength of catalysts. Considerable details of the catalytic and structural properties of the Ni, NiSn, and NiSnIn catalyst systems were elucidated. These observations were decisive for achieving a highly efficient formation rate of methanol via CO2 by the H2 reduction process with high methanol selectivity.

One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

Science.gov (United States)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

2017-04-01

Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

Electrochemical synthesis of nanostructured Se-doped SnS: Effect of Se-dopant on surface characterizations

Energy Technology Data Exchange (ETDEWEB)

Kafashan, Hosein, E-mail: hosein840521@gmail.com; Azizieh, Mahdi; Balak, Zohre

2017-07-15

Highlights: • Nanostructured SnS{sub 1-x}Se{sub x} thin films were prepared by using electrodeposition method. • The XRD patterns obviously showed that the synthesized films were polycrystalline. • The PL spectra of SnS{sub 1-x}Se{sub x} thin films showed four emission peaks. • The UV–vis spectra shows a variation in the optical band gap energy of SnS{sub 1-x}Se{sub x} thin films from 1.22 to 1.65 eV. • SnS{sub 1-x}Se{sub x} thin films would be suitable for use as absorber layers. - Abstract: SnS{sub 1-x}Se{sub x} nanostructures with different Se-dopant concentrations were deposited on fluorine doped tin oxide (FTO) substrate through cathodic electrodeposition technique. The pH, temperature, applied potential (E), and deposition time remained were 2.1, 60 °C, −1 V, and 30 min, respectively. SnS{sub 1-x}Se{sub x} nanostructures were characterized using X-ray diffraction (XRD), field emission scanning electron microcopy (FESEM), energy dispersive X-ray spectroscopy (EDX), room temperature photoluminescence (PL), and UV–vis spectroscopy. The XRD patterns revealed that the SnS{sub 1-x}Se{sub x} nanostructures were polycrystalline with orthorhombic structure. FESEM showed various kinds of morphologies in SnS{sub 1-x}Se{sub x} nanostructures due to Se-doping. PL and UV–vis spectroscopy were used to evaluate the optical properties of SnS{sub 1-x}Se{sub x} thin films. The PL spectra of SnS{sub 1-x}Se{sub x} nanostructures displayed four emission peaks, those are a blue, a green, an orange, and a red emission. UV–vis spectra showed that the optical band gap energy (E{sub g}) of SnS{sub 1-x}Se{sub x} nanostructures varied between 1.22–1.65 eV, due to Se-doping.

Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors

International Nuclear Information System (INIS)

Yang, Bong Seob; Oh, Seungha; Lee, Ung Soo; Kim, Yoon Jang; Oh, Myeong Sook; Hwang, Cheol Seong; Kim, Hyeong Joon; Huh, Myung Soo; Jeong, Jae Kyeong

2011-01-01

Thin film transistors (TFTs) with In and Ga-free multicomponent Zn-Sn-Zr-O (ZTZO) channel layers were fabricated using the cosputtering approach. The incorporation of ZrO 2 into the Zn-Sn-O (ZTO) films increased the contact resistance, which led to the degradation of the transport properties. In contrast, the threshold voltage shift under negative bias illumination stress (NBIS) was largely improved from -12.5 V (ZTO device) to -4.2 V (ZTZO device). This improvement was attributed to the reduction in the oxygen vacancy defects in the ZTZO film, suggesting that the photoinduced transition from V O to V O 2+ was responsible for the NBIS-induced instability.

Animal Bone Supported SnO2 as Recyclable Photocatalyst for Degradation of Rhodamine B Dye.

Science.gov (United States)

Wu, Yun; Wang, Hui; Cao, Mengdie; Zhang, Yichi; Cao, Feifei; Zheng, Xinsheng; Hu, Jinfei; Dong, Jiangshan; Xiao, Zhidong

2015-09-01

SnO2 nanoparticles supported on an animal bone which serves as inexpensive and environment-friendly natural products were developed by a facile hydrothermal approach. As a promising photocatalyst, the novel SnO2/porcine bone material exhibited high photocatalytic activity towards the degradation of rhodamine B (RhB) dye under UV-Vis irradiation. About 97.3% of RhB can be effectively decomposed by the catalysis with the SnO2/porcine bone in 90 min, while only 51.5% of RhB can be degraded by pure SnO2 nanoparticles. Moreover, the photocatalytic activity was incremental with the increase of cycle times in previous five cycles. It is mainly because the photocatalyst which has been used for several times possesses a stronger ability of light absorption and utilization compared to the fresh catalyst according to the results of the characterization and relative experiments. It is noteworthy that the animal bone support can improve the activity for the photocatalyst, which would provide further impetus to alternate synthesis strategies for photocatalysts and make the photocatalysis process faster, less expensive, and more environmentally friendly.

Foam Transport in Porous Media - A Review

Energy Technology Data Exchange (ETDEWEB)

Zhang, Z. F.; Freedman, Vicky L.; Zhong, Lirong

2009-11-11

Amendment solutions with or without surfactants have been used to remove contaminants from soil. However, it has drawbacks such that the amendment solution often mobilizes the plume, and its movement is controlled by gravity and preferential flow paths. Foam is an emulsion-like, two-phase system in which gas cells are dispersed in a liquid and separated by thin liquid films called lamellae. Potential advantages of using foams in sub-surface remediation include providing better control on the volume of fluids injected, uniformity of contact, and the ability to contain the migration of contaminant laden liquids. It is expected that foam can serve as a carrier of amendments for vadose zone remediation, e.g., at the Hanford Site. As part of the U.S. Department of Energy’s EM-20 program, a numerical simulation capability will be added to the Subsurface Transport Over Multiple Phases (STOMP) flow simulator. The primary purpose of this document is to review the modeling approaches of foam transport in porous media. However, as an aid to understanding the simulation approaches, some experiments under unsaturated conditions and the processes of foam transport are also reviewed. Foam may be formed when the surfactant concentration is above the critical micelle concentration. There are two main types of foams – the ball foam (microfoam) and the polyhedral foam. The characteristics of bulk foam are described by the properties such as foam quality, texture, stability, density, surface tension, disjoining pressure, etc. Foam has been used to flush contaminants such as metals, organics, and nonaqueous phase liquids from unsaturated soil. Ball foam, or colloidal gas aphrons, reportedly have been used for soil flushing in contaminated site remediation and was found to be more efficient than surfactant solutions on the basis of weight of contaminant removed per gram of surfactant. Experiments also indicate that the polyhedral foam can be used to enhance soil remediation. The

Thin gold films on SnO2:In: Temperature-dependent effects on the optical properties

International Nuclear Information System (INIS)

Lansåker, P.C.; Niklasson, G.A.; Granqvist, C.G.

2012-01-01

Gold films with thicknesses of 5 ± 0.5 nm were sputter deposited onto SnO 2 :In-coated glass kept at different temperatures up to 140 °C, and similar films, deposited onto substrates at 25 °C, were annealing post treated at the same temperatures. Nanostructures and optical properties were recorded by scanning electron microscopy and spectrophotometry in the 0.3 to 2.5 μm wavelength range, respectively. Annealing had a minor influence on the optical transmittance despite significant changes in the scale of the nanostructure, whereas deposition onto substrates heated to 140 °C yielded granular films with strong plasmon absorption of luminous radiation. These results are of considerable interest for optical devices with gold films prepared at elevated temperature or operating at such temperature. - Highlights: ► Thin gold films have been deposited onto base layers of SnO 2 :In. ► The gold depositions were made onto both non-heated and heated substrates. ► Gold depositions onto non-heated substrates were followed by heat treatment. ► Depending on heating procedure, the gold films show apparently different structure.

Radiochemical synthesis of a carbon-supported Pt–SnO2 bicomponent nanostructure exhibiting enhanced catalysis of ethanol oxidation

International Nuclear Information System (INIS)

Okazaki, Tomohisa; Seino, Satoshi; Nakagawa, Takashi; Kugai, Junichiro; Ohkubo, Yuji; Akita, Tomoki; Nitani, Hiroaki; Yamamoto, Takao A.

2015-01-01

Carbon-supported Pt–SnO 2 electrocatalysts with various Sn/Pt molar ratios were prepared by an electron beam irradiation method. These catalysts were composed of metallic Pt particles approximately 5 nm in diameter together with low crystalline SnO 2 . The contact between the Pt and SnO 2 in these materials varied with the amount of dissolved oxygen in the precursor solutions and it was determined that intimate contact between the Pt and SnO 2 significantly enhanced the catalytic activity of these materials during the ethanol oxidation reaction. The mechanism by which the contact varies is discussed based on the radiochemical reduction process. - Highlights: • Ethanol oxidation catalysis was enhanced by Sn-addition, far less than ever reported. • Pt–SnO 2 contact is crucial to the catalysis enhancement, alloying of Sn is not necessary. • Nano-scaled intimate contact between Pt and SnO 2 was directly observed

Forming foam structures with carbon foam substrates

Science.gov (United States)

Landingham, Richard L.; Satcher, Jr., Joe H.; Coronado, Paul R.; Baumann, Theodore F.

2012-11-06

The invention provides foams of desired cell sizes formed from metal or ceramic materials that coat the surfaces of carbon foams which are subsequently removed. For example, metal is located over a sol-gel foam monolith. The metal is melted to produce a metal/sol-gel composition. The sol-gel foam monolith is removed, leaving a metal foam.

thin films

Indian Academy of Sciences (India)

microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

Analysis of Methanol Sensitivity on SnO2-ZnO Nanocomposite

Science.gov (United States)

Bassey, Enobong E.; Sallis, Philip; Prasad, Krishnamachar

This research reports on the sensing behavior of a nanocomposite of tin dioxide (SnO2) and zinc oxide (ZnO). SnO2-ZnO nanocomposites were fabricated into sensor devices by the radio frequency sputtering method, and used for the characterization of the sensitivity behavior of methanol vapor. The sensor devices were subjected to methanol concentration of 200 ppm at operating temperatures of 150, 250 and 350 °C. A fractional difference model was used to normalize the sensor response, and determine the sensitivity of methanol on the sensor. Response analysis of the SnO2-ZnO sensors to the methanol was most sensitive at 350 °C, followed by 250 and 150 °C. Supported by the morphology (FE-SEM, AFM) analyses of the thin films, the sensitivity behavior confirmed that the nanoparticles of coupled SnO2 and ZnO nanocomposites can promote the charge transportation, and be used to fine-tune the sensitivity of methanol and sensor selectivity to a desired target gas.

Foam shell project: Progress report

International Nuclear Information System (INIS)

Overturf, G.; Reibold, B.; Cook, B.; Schroen-Carey, D.

1994-01-01

The authors report on their work to produce a foam shell target for two possible applications: (1) as liquid-layered cryogenic target on Omega Upgrade, and (2) as a back-up design for the NIF. This target consists of a roughly 1 mm diameter and 100 μm thick spherical low-density foam shell surrounding a central void. The foam will be slightly overfilled with liquid D 2 or DT, the overfilled excess being symmetrically distributed on the inside of the shell and supported by thermal gradient techniques. The outside of the foam is overcoated with full density polymer which must be topologically smooth. The technology for manufacturing this style of foam shell involves microencapsulation techniques and has been developed by the Japanese at ILE. Their goal is to determine whether this technology can be successfully adapted to meet US ICF objectives. To this end a program of foam shell development has been initiated at LLNL in collaboration with both the General Atomics DOE Target Fabrication Contract Corporation and the Target Fabrication Group at LLE

Investigations of foam formation and its stabilization in the extraction systems: TBP in kerosene-nitric acid solutions

International Nuclear Information System (INIS)

Zielinski, A.

1980-01-01

The paper is devoted to studies of foam formation and its stabilization in TBP - kerosene - nitric acid solutions extracting systems. It was experimentally found, that TBP acts as a stabilizator of thin, liquid foam films as well as an emulgator in forming dispersions. The stabilizing effect of fine emulsions w/o on formed foams column was observed. Relevant references on the subject are also reviewed. (author)

New powder compaction method using a styrene foam

International Nuclear Information System (INIS)

Kinemuchi, Y.; Takata, A.; Ishizaki, K.

1999-01-01

In general, metallic and ceramic powder compacts for sintering are shaped by uni-axial pressing or cold isostatic pressing (CIPing). Since metal or rubber is used as dies or moulds, it is difficult to form complicated shapes and flat disks, i.e., the ratio of diameter / thickness more than 50, by using uni-axial or CIPing. Rubber moulding, a moulding method with a rubber bag, can not press powder uniformly into flat disks because rubber deforms significantly. To solve this problem, we developed a new shaping technique to obtain complicated or thin flat shape by using styrene foam, which is cheap and has good machinability. Plastic foams such as styrene and acrylic foam contain many pores, and shrink uniformly by applying external pressure when the pores are collapsed. In this study, shrinking behavior of styrene and acrylic rubber moulds related to CIPing pressure was investigated. The experimental results show that the plastic foams shrink uniformly and the plastic deformation is linearly increased as CIP pressure increases. Copyright (1999) AD-TECH - International Foundation for the Advancement of Technology Ltd

Structural applications of metal foams considering material and geometrical uncertainty

Science.gov (United States)

Moradi, Mohammadreza

the composite tube, including the sensitivity of the strength to input parameters such as the foam density, tube wall thickness, steel properties etc. Monte Carlo simulation is performed on aluminum foam filled tubes under three point bending conditions. The simulation method is nonlinear finite element analysis. Results show that the steel foam properties have a greater effect on ductility of the steel foam filled tube than its strength. Moreover, flexural strength is more sensitive to steel properties than to aluminum foam properties. Finally, the properties of hypothetical structural steel foam C-channels foamed are investigated via simulations. In thin-walled structural members, stability of the walls is the primary driver of structural limit states. Moreover, having a light weight is one of the main advantages of the thin-walled structural members. Therefore, thin-walled structural members made of steel foam exhibit improved strength while maintaining their low weight. Linear eigenvalue, finite strip method (FSM) and plastic collapse FE analysis is used to evaluate the strength and ductility of steel foam C-channels under uniform compression and bending. It is found that replacing steel walls of the C-channel with steel foam walls increases the local buckling resistance and decreases the global buckling resistance of the C-channel. By using the Sobol' decomposition, an optimum configuration for the variable density steel foam C-channel can be found. For high relative density, replacing solid steel of the lips and flange elements with steel foam increases the buckling strength. On the other hand, for low relative density replacing solid steel of the lips and flange elements with steel foam deceases the buckling strength. Moreover, it is shown that buckling strength of the steel foam C-channel is sensitive to the second order Sobol' indices. In summary, it is shown in this research that the metal foams have a great potential to improve different types of structural

Effect of Coversheet Materials on the Acoustic Performance of Melamine Foam

Science.gov (United States)

McNelis, Anne M.; Hughes, William O.

2015-01-01

Melamine foam is a highly absorptive material that is often used inside the payload fairing walls of a launch vehicle. This foam reduces the acoustic excitation environment that the spacecraft experiences during launch. Often, the melamine foam is enclosed by thin coversheet materials for contamination protection, thermal protection, and electrostatic discharge control. Previous limited acoustic testing by NASA Glenn Research Center has shown that the presence of a coversheet material on the melamine foam can have a significant impact on the absorption coefficient and the transmission loss. As a result of this preliminary finding a more extensive acoustic test program using several different coversheet materials on melamine foam was performed. Those test results are summarized in this paper. Additionally, a method is provided to use the acoustic absorption and transmission loss data obtained from panel level testing to predict their combined effect for the noise reduction of a launch vehicle payload fairing.

Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films

International Nuclear Information System (INIS)

Kassim, Anuar; Wee Tee, Tan; Soon Min, Ho.; Nagalingam, Saravanan

2010-01-01

Cu 4 SnS 4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer. X-ray diffraction patterns indicated that the films were polycrystalline with prominent peak attributed to (221) plane of orthorhombic crystal structure. The films prepared at 80 min showed significant increased in the intensity of all diffractions. According to AFM images, these films indicated that the surface of substrate was covered completely. The obtained films also produced higher absorption characteristics when compared to the films prepared at other deposition periods based on optical absorption studies. The band gap values of films deposited at different deposition periods were in the range of 1.6-2.1 eV. Deposition for 80 min was found to be the optimum condition to produce good quality thin films under the current conditions. (author).

Foam, Foam-resin composite and method of making a foam-resin composite

Science.gov (United States)

Cranston, John A. (Inventor); MacArthur, Doug E. (Inventor)

1995-01-01

This invention relates to a foam, a foam-resin composite and a method of making foam-resin composites. The foam set forth in this invention comprises a urethane modified polyisocyanurate derived from an aromatic amino polyol and a polyether polyol. In addition to the polyisocyanurate foam, the composite of this invention further contains a resin layer, wherein the resin may be epoxy, bismaleimide, or phenolic resin. Such resins generally require cure or post-cure temperatures of at least 350.degree. F.

In-situ XRD study of alloyed Cu2ZnSnSe4-CuInSe2 thin films for solar cells

International Nuclear Information System (INIS)

Hartnauer, Stefan; Wägele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland

2015-01-01

We investigate the growth of Cu 2 ZnSnSe 4 -CuInSe 2 (CZTISe) thin films using a 2-stage (Cu-rich/Cu-free) co-evaporation process under simultaneous application of in-situ angle dispersive X-ray diffraction (XRD). In-situ XRD allows monitoring the phase formation during preparation. A variation of the content of indium in CZTISe leads to a change in the lattice constant. Single phase CZTISe is formed in a wide range, while at high In contents a phase separation is detected. Because of different thermal expansion coefficients, the X-ray diffraction peaks of ZnSe and CZTISe can be distinguished at elevated substrate temperatures. The formation of ZnSe appears to be inhibited even for low indium content. In-situ XRD shows no detectable sign for the formation of ZnSe. First solar cells of CZTISe have been prepared and show comparable performance to CZTSe. - Highlights: • In-situ XRD study of two-stage co-evaporated Cu 2 ZnSnSe 4 -CuInSe 2 alloyed thin films. • No detection of ZnSe with in-situ XRD due to Indium incorporation • Comparable efficiency of alloyed solar cells

Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

Energy Technology Data Exchange (ETDEWEB)

Qin, Ruifeng [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Cao, Hongtao; Liang, Lingyan, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 (China); Liu, Caichi; Sun, Weizhong, E-mail: lly@nimte.ac.cn, E-mail: swz@hebut.edu.cn [Hebei Engineering Laboratory of Photoelectronic Functional Crystals, Hebei University of Technology (HEBUT), Tianjin 300401 (China)

2016-04-04

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and from 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

mdFoam+: Advanced molecular dynamics in OpenFOAM

Science.gov (United States)

Longshaw, S. M.; Borg, M. K.; Ramisetti, S. B.; Zhang, J.; Lockerby, D. A.; Emerson, D. R.; Reese, J. M.

2018-03-01

This paper introduces mdFoam+, which is an MPI parallelised molecular dynamics (MD) solver implemented entirely within the OpenFOAM software framework. It is open-source and released under the same GNU General Public License (GPL) as OpenFOAM. The source code is released as a publicly open software repository that includes detailed documentation and tutorial cases. Since mdFoam+ is designed entirely within the OpenFOAM C++ object-oriented framework, it inherits a number of key features. The code is designed for extensibility and flexibility, so it is aimed first and foremost as an MD research tool, in which new models and test cases can be developed and tested rapidly. Implementing mdFoam+ in OpenFOAM also enables easier development of hybrid methods that couple MD with continuum-based solvers. Setting up MD cases follows the standard OpenFOAM format, as mdFoam+ also relies upon the OpenFOAM dictionary-based directory structure. This ensures that useful pre- and post-processing capabilities provided by OpenFOAM remain available even though the fully Lagrangian nature of an MD simulation is not typical of most OpenFOAM applications. Results show that mdFoam+ compares well to another well-known MD code (e.g. LAMMPS) in terms of benchmark problems, although it also has additional functionality that does not exist in other open-source MD codes.

Structure and characterization of Sn, Al co-doped zinc oxide thin films prepared by sol–gel dip-coating process

Energy Technology Data Exchange (ETDEWEB)

Lee, Min-I [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Legrand, David [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Lerondel, Gilles [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taiwan (China)

2014-11-03

Transparent conductive zinc oxide co-doped with tin and aluminum (TAZO) thin films were prepared via sol–gel dip-coating process. Non-toxic ethanol was used in this study instead of 2-methoxyethanol used in conventional work. Dip-coating was repeated several times to obtain relatively thick films consisting of six layers. The films were then annealed at 500 °C for 1 h in air or in vacuum and not subsequently as employed in other studies. The X-ray diffraction patterns indicated that all the samples revealed a single phase of hexagonal ZnO polycrystalline structure with a main peak of (002). The optical band gap and resistivity of the TAZO films were in the ranges of 3.28 to 3.32 eV and 0.52 to 575.25 Ω cm, respectively. The 1.0 at.% Sn, 1.0 at.% Al co-doped ZnO thin film annealed in vacuum was found to have a better photoelectrochemical performance with photocurrent density of about 0.28 mA/cm{sup 2} at a bias of 0.5 V vs. SCE under a 300 W Xe lamp illumination with the intensity of 100 mW/cm{sup 2}. Compared to the same dopant concentration but annealed in air (∼ 0.05 mA/cm{sup 2} bias 0.5 V vs. SCE), the photocurrent density of the film annealed in vacuum was 5 times higher than the film annealed in air. Through electrochemical measurements, we found that the dopant concentration of Sn plays an important role in TAZO that affected photocurrent density, stability of water splitting and anti-corrosion. - Highlights: • Al, Sn co-doped ZnO (TAZO) films was synthesized by sol–gel process. • The parameters of TAZO films were dopant concentration and annealed ambient. • The photoelectrochemical characteristics of TAZO films were investigated.

Optoelectronic characterizations of vacuum evaporated Cu 2 SnS 3 ...

African Journals Online (AJOL)

... of non-toxic, cheap earthly abundant, ternary compound of Cu2SnS3 thin film. ... film were investigated by X-Ray Diffraction and Scanning Electron Microscope. ... to determine the electrical properties of the deposited Cu2SnS3 ternary films.

Estimation of surface elasticity by the thickness change of liquid film and its correlation with foam stability

Energy Technology Data Exchange (ETDEWEB)

Lim, Jung Ryoul; Park, Jai Koo [Hanyang University, Seoul (Korea, Republic of)

1996-04-30

The relationship between foam stability and surface elasticity by the thickness change of liquid film was investigated. Foam stability was measured by draining liquid volume and decreasing gas volume as a function of time. Foam was formed by the fixed gas-injection the surfactant aqueous solution of different concentration. The used surfactants were sodium lauryl sulfate, hexadecane sulfonic acid sodium salt, and octane sulfonic acid sodium salt. Thickness of liquid film was estimated by using the volume ratio of liquid to gas in foam and surface elasticity of lamella was calculated by the surface tension and adsorbed amount. The thinning of liquid film is due to the combined effects of gravity and capillary suction, it would be ruptured at the minimum of lamella thickness which is called critical thickness. The lamella thickness of bubble which was formed at CMC(critical micelle concentration) was very thin. In the case of sodium lauryl sulfate, the thinning of lamella was continued in the range of measurement. The critical thicknesses of octane sulfonic acid sodium salt solution, hexadecane sulfonic acid sodium salt solution were determined to 0.479{approx}0.316, 0.209{approx}0.200 {mu}m, respectively. It was found that the tendency for foam stability was similar to that of lamella thickness. It was considered that foam which was formed at CMC has very high stability, and the order of foam stability for surfactant aqueous solution was sodium lauryl sulfate > hexadecane sulfonic acid sodium salt > octane sulfonic acid sodium salt. These results was considered that the lamella-rupturing was retarded by the relatively high surface elasticity of lamella. The saturated adsorption of surfactant was determined to 3.25{approx}3.04 * 10{sup -6} mol/m{sup 2} and the surface elasticity of lamella was also determined to 3{approx}56 mN/m. (author). 19 refs., 1 tab., 11 figs.

Photoelectrochemical Characterization of Sprayed alpha-Fe2O3 Thin Films : Influence of Si Doping and SnO2 Interfacial Layer

NARCIS (Netherlands)

Liang, Y.; Enache, C.S.; Van De Krol, R.

2008-01-01

a-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc)3. The donor density in the Fe2O3 films could be tuned between 10171020cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting

Effect of Annealing Temperature on Gas Sensing Performance of SnO2 Thin Films Prepared by Spray Pyrolysis

Directory of Open Access Journals (Sweden)

G. E. PATIL

2010-12-01

Full Text Available The effect of variation of annealing temperature on the gas sensing characteristics of SnO2 thin films, which have been prepared by spray pyrolysis on alumina substrate at 350 oC, is investigated systematically for various gases at different operating temperature. The XRD, UV-visible spectroscopy and SEM techniques were employed to establish the structural, optical and morphological characteristics of the materials, resp. The X-ray diffraction results showed an increase in the crystallinity at higher annealing temperature. A high value of sensitivity is obtained for H2S gas at an optimum temperature of 100 oC is improved considerably. A SnO2 gas sensor annealed at 950 oC with sensitivity as high as 24 %, 4 times higher than that of sensor annealed at 550oC, are obtained for 80 ppm of H2S. The degree of crystallinity and grain size calculated from the XRD patterns has been found increasing with annealing temp

Effects of interlayer Sn-Sn lone pair interaction on the band gap of bulk and nanosheet SnO

Science.gov (United States)

Umezawa, Naoto; Zhou, Wei

2015-03-01

Effects of interlayer lone-pair interactions on the electronic structure of SnO are firstly explored by the density-functional theory. Our comprehensive study reveals that the band gap of SnO opens as increase in the interlayer Sn-Sn distance. The effect is rationalized by the character of band edges which consists of bonding and anti-bonding states from interlayer lone pair interactions. The band edges for several nanosheets and strained double-layer SnO are estimated. We conclude that the double-layer SnO is a promising material for visible-light driven photocatalyst for hydrogen evolution. This work is supported by the Japan Science and Technology Agency (JST) Precursory Research for Embryonic Science and Technology (PRESTO) program.

Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Bras, Patrice, E-mail: patrice.bras@angstrom.uu.se [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla, Sweden and Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden); Sterner, Jan [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla (Sweden); Platzer-Björkman, Charlotte [Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden)

2015-11-15

Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device. Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.

Microwave heated polyol synthesis of carbon supported PtAuSn/C nanoparticles for ethanol electrooxidation

Energy Technology Data Exchange (ETDEWEB)

Zhu, Hong; Han, Kefei [School of Science, State key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Liu, Yingli; Chang, Zhaorong [College of Chemistry and Environmental Science, Henan Normal University, Xinxiang, Henan (China); Shen, Liangbo [Beijing No.4 High School, Beijing (China); Wei, Yongsheng; Guo, Zhijun (School of Science Beijing Jiaotong University Beijing P. R. China); Wang, Haijiang [Institute for Fuel Cell Innovation, National Research Council of (Canada)

2010-04-15

Carbon-supported PtAuSn/C nanoparticle catalyst was synthesized by a microwave-assisted polyol process. The process is a quick process that only requires a few minutes to complete. The catalyst thus obtained was characterized by transmission electron microscopy and X-ray diffraction analysis. The electrochemical performance of the catalyst, for the ethanol oxidation reaction, was also investigated. The results indicated that the PtAuSn/C catalyst was uniformly dispersed on carbon and was in the nano-size range. The electrochemical measurements indicated that PtAuSn/C nanoparticle catalyst synthesized by the microwave-assisted polyol method demonstrated a significantly higher electrochemically active area and higher catalytic activity than Pt/C for the ethanol oxidation reaction. (author)

Direct sputtering- and electro-deposition of gold coating onto the closed surface of ultralow-density carbon-hydrogen foam cylinder

Energy Technology Data Exchange (ETDEWEB)

Luo, Jiaqiu; Yin, Jialing; Zhang, Hao; Yao, Mengqi; Hu, Wencheng, E-mail: huwc@uestc.edu.cn

2016-12-15

Highlights: • The surface pores of P(DVB/St) foam cylinder are sealed by CVD method. • Gold film was deposited on the surface of foam cylinder by magnetron sputtering. • Electroless plating was excluded in the present experiments. • The gold coatings were thickened through the electrodeposition process. - Abstract: This work aimed to fabricate a gold coating on the surface of ultralow-density carbon-hydrogen foam cylinder without electroless plating. Poly (divinylbenzene/styrene) foam cylinder was synthetized by high internal phase emulsion, and chemical vapor deposition polymerization approach was used to form a compact poly-p-xylylene film on the foam cylinder. Conducting gold thin films were directly deposited onto the poly-p-xylylene-modified foam cylinder by magnetron sputtering, and electrochemical deposition was adopted to thicken the gold coatings. The micro-structures and morphologies of poly (divinylbenzene/styrene) foam cylinder and gold coating were observed by field-emission scanning electron microscopy. The gold coating content was investigated by energy-dispersive X-ray. The thicknesses of poly-p-xylylene coating and sputtered gold thin-film were approximately 500 and 100 nm, respectively. After electrochemical deposition, the thickness of gold coating increased to 522 nm, and the gold coating achieved a compact and uniform structure.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

International Nuclear Information System (INIS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-01-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Preparation of PtSnCu/C and PtSn/C electrocatalysts and activation by dealloying processes for ethanol electrooxidation; Preparacao de eletrocatalisadores PtSnCu/C e PtSn/C e ativacao por processos de dealloying para aplicacao na oxidacao eletroquuimica do etanol

Energy Technology Data Exchange (ETDEWEB)

Crisafulli, Rudy

2013-06-01

PtSnCu/C (with different Pt:Sn:Cu atomic ratios) and PtSn/C (50:50) electrocatalysts were prepared by borohydride (BR) and alcohol-reduction (AR) processes using H{sub 2}PtCl{sub 6}.6H{sub 2}O, SnCl{sub 2}.2H{sub 2}O and CuCl{sub 2}.2H{sub 2}O as metal sources, NaBH{sub 4} and ethylene glycol as reducing agents, 2-propanol and ethylene glycol/water as solvents and carbon black as support. In a further step, these electrocatalysts were activated by chemical (CD) and electrochemical (ED) dealloying processes through acid treatment and thin porous coating technique, respectively. These materials were characterized by energy dispersive X-ray, Xray diffraction, transmission electron microscopy, line scan energy dispersive Xray and cyclic voltammetry. Electrochemical studies for ethanol electro-oxidation were performed by cyclic voltammetry, chronoamperometry and in single Direct Ethanol Fuel Cell using Membrane Electrode Assembly (MEA). The anodic effluents were analysed by gas chromatography. The X-ray diffractograms of the as-synthesized electrocatalysts showed the typical face-centered cubic structure (FCC) of platinum and its alloys. After dealloying, the X-ray diffractograms showed that the Pt FCC structure was preserved. The crystallite sizes of the assynthesized electrocatalysts were in the range of <=2 nm to 3 nm and after dealloying there were no significant variations in sizes. The energy dispersive Xray analysis of the as-synthesized electrocatalysts showed a Pt:Sn and Pt:Sn:Cu atomic ratios similar to the nominal values. After chemical and electrochemical dealloying of the electrocatalysts the ranged Pt:Sn and Pt:Sn:Cu atomic ratios showed that Cu and Sn atoms were removed. However, chemical dealloying process proved to be more efficient for removing Cu and electrochemical dealloying for removing Sn. The line scan energy dispersive X-ray analysis showed that acid and electrochemical treatments were efficient to dealloying Cu and/or Sn superficial atoms of

Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

Science.gov (United States)

Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

2017-11-22

In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and

Ultrathin mesoporous NiCo{sub 2}O{sub 4} nanosheets supported on Ni foam as advanced electrodes for supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Yuan, Changzhou [Anhui Key Laboratory of Metal Materials and Processing, School of Materials Science and Engineering, Anhui University of Technology, Maanshan, 243002 (China); School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive (Singapore); Li, Jiaoyang; Hou, Linrui [Anhui Key Laboratory of Metal Materials and Processing, School of Materials Science and Engineering, Anhui University of Technology, Maanshan, 243002 (China); Zhang, Xiaogang; Shen, Laifa [College of Material Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016 (China); Lou, Xiong Wen [School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive (Singapore)

2012-11-07

A facile two-step method is developed for large-scale growth of ultrathin mesoporous nickel cobaltite (NiCo{sub 2}O{sub 4}) nanosheets on conductive nickel foam with robust adhesion as a high-performance electrode for electrochemical capacitors. The synthesis involves the co-electrodeposition of a bimetallic (Ni, Co) hydroxide precursor on a Ni foam support and subsequent thermal transformation to spinel mesoporous NiCo{sub 2}O{sub 4}. The as-prepared ultrathin NiCo{sub 2}O{sub 4} nanosheets with the thickness of a few nanometers possess many interparticle mesopores with a size range from 2 to 5 nm. The nickel foam supported ultrathin mesoporous NiCo{sub 2}O{sub 4} nanosheets promise fast electron and ion transport, large electroactive surface area, and excellent structural stability. As a result, superior pseudocapacitive performance is achieved with an ultrahigh specific capacitance of 1450 F g{sup -1}, even at a very high current density of 20 A g{sup -1}, and excellent cycling performance at high rates, suggesting its promising application as an efficient electrode for electrochemical capacitors. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A novel route to graphite-like carbon supporting SnO{sub 2} with high electron transfer and photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Chen, Xianjie; Liu, Fenglin; Liu, Bing [Hubei Collaborative Innovation Center for Advanced Organochemical Materials, Hubei University, Wuhan 430062 (China); Ministry of Education Key Laboratory for the Synthesis and Applications of Organic Functional Molecules, Hubei University, Wuhan 430062 (China); Tian, Lihong, E-mail: tian7978@hubu.edu.cn [Hubei Collaborative Innovation Center for Advanced Organochemical Materials, Hubei University, Wuhan 430062 (China); Ministry of Education Key Laboratory for the Synthesis and Applications of Organic Functional Molecules, Hubei University, Wuhan 430062 (China); Hu, Wei; Xia, Qinghua [Hubei Collaborative Innovation Center for Advanced Organochemical Materials, Hubei University, Wuhan 430062 (China); Ministry of Education Key Laboratory for the Synthesis and Applications of Organic Functional Molecules, Hubei University, Wuhan 430062 (China)

2015-04-28

Highlights: • Mesoporous nanocomposites that graphite-like carbon supporting SnO{sub 2} are prepared by solvothermal method combined with a post- calcination. • The polyvinylpyrrolidone not only promotes the nucleation and crystallization but also provides the carbon source in the process. • The graphite-like carbon hinders the recombination of photogenerated electron and holes efficiently. • The mesoporous carbon–SnO{sub 2} nanocomposite shows high photocatalytic activity on the degradation of Rhodamine B and glyphosate under simulated sunlight. - Abstract: Mesoporous graphite-like carbon supporting SnO{sub 2} (carbon–SnO{sub 2}) nanocomposites were prepared by a modified solvothermal method combined with a post-calcination at 500 °C under a nitrogen atmosphere. The polyvinylpyrrolidone not only promotes the nucleation and crystallization, but also provides the carbon source in the process. The results of scanning electron microscopy and transmission electron microscopy show a uniform distribution of SnO{sub 2} nanoparticles on the graphite- like carbon surface. Raman and X-ray photoelectron spectra indicate the presence of strong C–Sn interaction between SnO{sub 2} and graphite-like carbon. Photoelectrochemical measurements confirm that the effective separation of electron–hole pairs on the carbon–SnO{sub 2} nanocomposite leads to a high photocatalytic activity on the degradation of Rhodamine B and glyphosate under simulated sunlight irradiation. The nanocomposite materials show a potential application in dealing with the environmental and industrial contaminants under sunlight irradiation.

Cu{sub 2}ZnSnS{sub 4} thin films obtained by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers: Influence of the ternary precursor features

Energy Technology Data Exchange (ETDEWEB)

Robles, V.; Guillén, C., E-mail: c.guillen@ciemat.es; Trigo, J.F.; Herrero, J.

2017-04-01

Highlights: • Kesterite Cu{sub 2}ZnSnS{sub 4} is got by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers. • Smooth films are obtained by decreasing the growth temperature of Cu{sub 2}SnS{sub 3}. • The lattice strain and the electrical conductivity increase with the Cu-content. • The energy gap diminishes as the Cu-content and/or the surface roughness increase. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been grown by sulfurization of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers evaporated on glass substrates. Four CTS precursor films have been tested, with two different atomic compositions (Cu/Sn = 1.7 and Cu/Sn = 2.1) and substrate temperatures (350 and 450 °C), together with analogous ZnS layers deposited by maintaining the substrate at 200 °C. The sulfurization of the CTS and ZnS stacked layers was performed at 500 °C during 1 h. The evolution of the crystalline structure, morphology, optical and electrical properties from each CTS precursor to the CZTS compound has been studied, especially the influence of the ternary precursor features on the quaternary film characteristics. The kesterite structure has been identified after sulfurization of the various samples, with main (112) orientation and mean crystallite sizes S{sub 112} = 40–56 nm, being higher for the Cu-poor compositions. The CZTS average roughness has varied in a wide interval R{sub a} = 8–66 nm, being directly related to the CTS precursor layer, which becomes rougher for a higher deposition temperature or Cu content. Besides, the band gap energy and the electrical resistivity of the CZTS films have changed in the ranges E{sub g} = 1.54–1.64 eV and ρ = 0.2–40 Ωcm, both decreasing when the Cu content and/or the surface roughness increase.

Fluxless Sn-Ag bonding in vacuum using electroplated layers

International Nuclear Information System (INIS)

Kim, Jongsung; Lee, Chin C.

2007-01-01

A fluxless bonding process in vacuum environment using newly developed electroplated Sn-Ag multilayer structure at eutectic composition is presented. The new bonding process is entirely fluxless, or flux-free. It is performed in vacuum (100 mTorr), in which the oxygen content is reduced by a factor of 7600 comparing to air, to inhibit solder oxidation. In the design, Cr/Au dual layer is employed as the UBM as well as the plating seed layer. This UBM design, seldom used in the electronic industry, is explained in some details. To realize the fluxless possibility, a proper layer design of the solder structure is needed. In this connection, we wish to point out that it is hard to achieve fluxless bonding using Sn-rich alloys because these alloys have numerous Sn atoms on the surface that are easily oxidized. To prevent Sn oxidation, a thin Ag layer is plated immediately over Sn layer. XRD results confirm that this thin Ag layer does act as a barrier to prevent oxidation of the inner Sn layer. The resulting solder joints are void free as examined by a scanning acoustic microscope (SAM). SEM and EDX studies on the cross section of the joint indicate a homogeneous Sn-rich phase. The melting temperature is measured to be between 219 and 226 deg. C. This new fluxless bonding process is valuable in many applications where the use of flux is prohibited

Studies on fully transparent Al-Sn-Zn-O thin-film transistors fabricated on glass at low temperature

Science.gov (United States)

Cong, Yingying; Han, Dedong; Wu, Jing; Zhao, Nannan; Chen, Zhuofa; Zhao, Feilong; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2015-04-01

High-performance fully transparent Al-Sn-Zn-O thin-film transistors (ATZO TFTs) with excellent electrical performance have been successfully fabricated by RF magnetron sputtering on glass at low temperatures. Two kinds of appropriate ATZO compositions are compared from several perspectives, including film material characteristics, device electrical performances, and fabrication process conditions. Finally, we achieve two excellent ATZO TFTs with competitive advantages. The ATZO TFT with larger amounts of dopants exhibits a superior field effect mobility μFE of 102.38 cm2 V-1 s-1, an ON/OFF current ratio (Ion/Ioff) of 1.18 × 107, and a threshold voltage VT of 1.35 V. The device with smaller amounts of dopants demonstrates better crystal quality and an excellent subthreshold swing SS of 155 mV/dec. Furthermore, it is less affected by oxygen partial pressure. The ATZO thin films display a high transmittance of over 80% in the visible light range.

Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

KAUST Repository

Caraveo-Frescas, J. A.

2013-11-25

p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.

Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

Science.gov (United States)

Kim, Jekyung; Shin, Byungha

2017-09-01

Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

Cu{sub 2}ZnSnS{sub 4} thin films by simple replacement reaction route for solar photovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Tiwari, Devendra, E-mail: devendratiwari.rnd@ecchanga.ac.in [Dr. K. C. Patel Research and Development Centre, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Chaudhuri, Tapas K. [Dr. K. C. Patel Research and Development Centre, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Ray, Arabinda [P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology, Changa, Anand District, Gujarat 388421 (India); Tiwari, Krishan Dutt [Powerdeal Energy Systems - India, Private Limited, Nashik 422010, Maharashtra (India)

2014-01-31

A process for deposition of Cu{sub 2}ZnSnS{sub 4} (CZTS) films using replacement of Zn{sup 2+} in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 10{sup 17} cm{sup −3} and 1.4 cm{sup 2}V{sup −1} s{sup −1} respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO{sub 2}:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm{sup 2}, respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. - Highlights: • Pure kesterite Cu{sub 2}ZnSnS{sub 4} thin films deposited by replacement reaction route • Energy band gap of films is 1.45 eV. • p-type films with conductivity of 4.6 S/cm and mobility of 1.4 cm{sup 2} S{sup −1} V{sup −1} • Fabrication of Graphite/Cu{sub 2}ZnSnS{sub 4}/CdS/ZnO/SnO{sub 2}:In/Glass solar cell • Solar cell delivered efficiency of 6.17% with high fill factor of 0.62.

Controlled synthesis of carbon-supported Pt{sub 3}Sn by impregnation-reduction and performance on the electrooxidation of CO and ethanol

Energy Technology Data Exchange (ETDEWEB)

Garcia-Rodriguez, S.; Pena, M.A.; Fierro, J.L.G.; Rojas, S. [Grupo Energia y Quimica Sostenibles, Instituto de Catalisis y Petroleoquimica, CSIC, C/Marie Curie 2, E-28049 Madrid (Spain)

2010-09-01

The paper discusses experimental features relevant to the synthesis of carbon-supported Pt{sub 3}Sn nanosized particles by impregnation-reduction of the salt precursors in carbon. Colloidal techniques are proposed as the most suitable ones for obtaining carbon-supported nanosized Pt{sub 3}Sn particles. In most cases, the electrocatalysts obtained have a wide range of Pt and Sn phases, including bimetallic ones. The synthesis of similar materials by impregnating readily available precursors such as SnCl{sub 2} and H{sub 2}PtCl{sub 6} yields Pt-enriched catalyst precursors. In order to obtain electrocatalysts with the desired Pt:Sn = 3 atomic stoichiometry, it is necessary to eliminate chloride ions prior to thermal treatments. Microscopy characterization and thermal stability studies of the fresh and treated bimetallic materials reveal that if such ions are present, Sn is eliminated as volatile SnCl{sub x} species at around 120-130 C. Chloride elimination is achieved by ageing the catalyst precursor in water to ensure the complete hydrolysis of the SnCl{sub 2} precursor. This treatment should be performed once SnCl{sub 2} has been deposited on the carbon to avoid the formation of large Sn-oxide aggregates. A further thermal treatment in hydrogen results in the formation of the desired Pt{sub 3}Sn intermetallic phase. The performance of the Pt{sub 3}Sn/C samples in the CO and ethanol electrooxidation reaction has been studied by means of electrochemical techniques. The electrocatalysts prepared by the impregnation-reduction approach match the performance of the state-of-the-art Pt{sub 3}Sn samples prepared by colloidal techniques. (author)

Foamed Antenna Support for Very Large Apertures, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed Phase I program will demonstrate the feasibility of the in-space production of large aperture antenna structures. The use of a novel open cell foam,...

Foam generation and sample composition optimization for the FOAM-C experiment of the ISS

Science.gov (United States)

Carpy, R.; Picker, G.; Amann, B.; Ranebo, H.; Vincent-Bonnieu, S.; Minster, O.; Winter, J.; Dettmann, J.; Castiglione, L.; Höhler, R.; Langevin, D.

2011-12-01

End of 2009 and early 2010 a sealed cell, for foam generation and observation, has been designed and manufactured at Astrium Friedrichshafen facilities. With the use of this cell, different sample compositions of "wet foams" have been optimized for mixtures of chemicals such as water, dodecanol, pluronic, aethoxisclerol, glycerol, CTAB, SDS, as well as glass beads. This development is performed in the frame of the breadboarding development activities of the Experiment Container FOAM-C for operation in the ISS Fluid Science Laboratory (ISS). The sample cell supports multiple observation methods such as: Diffusing-Wave and Diffuse Transmission Spectrometry, Time Resolved Correlation Spectroscopy [1] and microscope observation, all of these methods are applied in the cell with a relatively small experiment volume 40).

Novel chemical route for deposition of Cu{sub 2}ZnSnS{sub 4} photovoltaic absorbers

Energy Technology Data Exchange (ETDEWEB)

Gordillo, Gerardo; Becerra, Raul A.; Calderón, Clara L., E-mail: ggordillog@unal.edu.co [Universidad Nacional de Colombia, Bogota (Colombia)

2018-05-01

This work reports results of a study carried out to optimize the preparation conditions of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by sequential deposition of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers, where the Cu{sub 2}SnS{sub 3} compound was grown using a novel procedure consisting of simultaneous precipitation of Cu{sub 2}S and SnS{sub 2} performed by diffusion membrane assisted chemical bath deposition (CBD) technique. The precipitation across the diffusion membranes allows achieving moderate control of release of metal ions into the work solution favoring the heterogeneous growth mainly through an ion-ion mechanism. Through a parameters study, conditions were found to grow Cu{sub 2}SnS{sub 3} thin films which were used as precursors for the formation of Cu{sub 2}ZnSnS{sub 4} films. The formation of CZTS thin films grown in the Cu{sub 2}ZnSnS{sub 4} phase was verified through measurements of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Solar cells with efficiencies of 4.9% were obtained using CZTS films prepared by membrane assisted CBD technique as absorber layer. (author)

Generation of ozone foam and its application for disinfection

Science.gov (United States)

Hiragaki, Keisuke; Ishimaru, Tomiya; Nakanishi, Masaru; Muraki, Ryouji; Nieda, Masanori; Yamabe, Chobei

2015-07-01

Generated ozone foam was applied to the disinfection of Pseudomonas fluorescens. The effect of disinfection has been confirmed experimentally and new equipment for the disinfection of hands using this ozone foam has been put on the market for the practical use. The ozone foam was produced in the foam generator after mixing the water including surfactant (30 mL/min) and air including ozone (1000 ppm = 2.14 g/m3 ~ 1600 ppm = 3.4 g/m3, 300 mL/min). The liquid-to-gas ratio is 100 L/m3. The concentration of dissolved ozone in the thin liquid films of the bubbles was about 3 mg/L which was measured by the chemical method of the KI absorption and titration of sodium thiosulfate solution. The disinfection test samples were prepared using the PET disk on which Pseudomonas fluorescens of its number of more than 108 were attached. Test sample was inserted into ozone foam set on the glass plate for one to 6 min. The survival rate log (N/N0 decreased with time and its value of about-2.6 (i.e., ~1/400) was obtained at 6 min (2 min × 3 times repeated). It was also confirmed that the ozone foam was useful for the disinfection of hands. For more effective disinfection (in case of taking a long time for foam melting), the ozone foam was broken by force and changed into ozone water by which the survival rate decreased ×4 (i.e., N/N0 = 1/10 000) at 4 ~ 6 min. Contribution to the topical issue "The 14th International Symposium on High Pressure Low Temperature Plasma Chemistry (HAKONE XIV)", edited by Nicolas Gherardi, Ronny Brandenburg and Lars Stollenwark

Room Temperature Gas Sensing Properties of Sn-Substituted Nickel Ferrite (NiFe2O4) Thin Film Sensors Prepared by Chemical Co-Precipitation Method

Science.gov (United States)

Manikandan, V.; Li, Xiaogan; Mane, R. S.; Chandrasekaran, J.

2018-04-01

Tin (Sn) substituted nickel ferrite (NiFe2O4) thin film sensors were prepared by a simple chemical co-precipitation method, which initially characterized their structure and surface morphology with the help of x-ray diffraction and scanning electron microscopy. Surface morphology of the sensing films reveals particles stick together with nearer particles and this formation leads to a large specific area as a large specific area is very useful for easy adsorption of gas molecules. Transmission electron microscopy and selected area electron diffraction pattern images confirm particle size and nanocrystallnity as due to formation of circular rings. Fourier transform infrared analysis has supported the presence of functional groups. The 3.69 eV optical band gap of the film was found which enabled better gas sensing. Gas sensors demonstrate better response and recovery characteristics, and the maximum response was 68.43%.

Method of Heating a Foam-Based Catalyst Bed

Science.gov (United States)

Fortini, Arthur J.; Williams, Brian E.; McNeal, Shawn R.

2009-01-01

A method of heating a foam-based catalyst bed has been developed using silicon carbide as the catalyst support due to its readily accessible, high surface area that is oxidation-resistant and is electrically conductive. The foam support may be resistively heated by passing an electric current through it. This allows the catalyst bed to be heated directly, requiring less power to reach the desired temperature more quickly. Designed for heterogeneous catalysis, the method can be used by the petrochemical, chemical processing, and power-generating industries, as well as automotive catalytic converters. Catalyst beds must be heated to a light-off temperature before they catalyze the desired reactions. This typically is done by heating the assembly that contains the catalyst bed, which results in much of the power being wasted and/or lost to the surrounding environment. The catalyst bed is heated indirectly, thus requiring excessive power. With the electrically heated catalyst bed, virtually all of the power is used to heat the support, and only a small fraction is lost to the surroundings. Although the light-off temperature of most catalysts is only a few hundred degrees Celsius, the electrically heated foam is able to achieve temperatures of 1,200 C. Lower temperatures are achievable by supplying less electrical power to the foam. Furthermore, because of the foam s open-cell structure, the catalyst can be applied either directly to the foam ligaments or in the form of a catalyst- containing washcoat. This innovation would be very useful for heterogeneous catalysis where elevated temperatures are needed to drive the reaction.

Impact of foamed matrix components on foamed concrete properties

Science.gov (United States)

Tarasenko, V. N.

2018-03-01

The improvement of the matrix foam structure by means of foam stabilizing additives is aimed at solving the technology-oriented problems as well as at the further improvement of physical and mechanical properties of cellular-concrete composites. The dry foam mineralization is the mainstream of this research. Adding the concrete densifiers, foam stabilizers and mineral powders reduces the drying shrinkage, which makes the foam concrete products technologically effective.

Enhancement of the catalytic activity of Pt nanoparticles toward methanol electro-oxidation using doped-SnO2 supporting materials

Science.gov (United States)

Merati, Zohreh; Basiri Parsa, Jalal

2018-03-01

Catalyst supports play important role in governing overall catalyst activity and durability. In this study metal oxides (SnO2, Sb and Nb doped SnO2) were electrochemically deposited on titanium substrate (Ti) as a new support material for Pt catalyst in order to electro-oxidation of methanol. Afterward platinum nanoparticles were deposited on metal oxide film via electro reduction of platinum salt in an acidic solution. The surface morphology of modified electrodes were evaluated by field-emission scanning electron microscopy (FESEM) and energy dispersive X-ray analysis (EDX) techniques. The electro-catalytic activities of prepared electrodes for methanol oxidation reaction (MOR) and oxidation of carbon monoxide (CO) absorbed on Pt was considered with cyclic voltammetry. The results showed high catalytic activity for Pt/Nb-SnO2/Ti electrode. The electrochemical surface area (ECSA) of a platinum electro-catalyst was determined by hydrogen adsorption. Pt/Nb-SnO2/Ti electrode has highest ECSA compared to other electrode resulting in high activity toward methanol electro-oxidation and CO stripping experiments. The doping of SnO2 with Sb and Nb improved ECSA and MOR activity, which act as electronic donors to increase electronic conductivity.

Imposition of defined states of stress on thin films by a wafer-curvature method; validation and application to aging Sn films

Energy Technology Data Exchange (ETDEWEB)

Stein, J., E-mail: Jendrik.Stein@de.bosch.com [Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstr. 3, 70569 Stuttgart (Germany); Robert Bosch GmbH, Automotive Electronics/Engineering Assembly and Interconnect Technology (AE/EAI2), Robert-Bosch-Str. 2, 71701 Schwieberdingen (Germany); Pascher, M. [Institute for Materials Science, University of Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart (Germany); Welzel, U. [Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstr. 3, 70569 Stuttgart (Germany); Huegel, W. [Robert Bosch GmbH, Automotive Electronics/Engineering Assembly and Interconnect Technology (AE/EAI2), Robert-Bosch-Str. 2, 71701 Schwieberdingen (Germany); Mittemeijer, E.J. [Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstr. 3, 70569 Stuttgart (Germany); Institute for Materials Science, University of Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart (Germany)

2014-10-01

A wafer-curvature method has been developed to subject thin films, deposited on (Si) substrates, to well defined and controllable loads in a contact-free manner. To this end, a custom-made glass pan (i.e. a roof-less cylinder with a connection piece for vacuum tubes) connected to a needle valve, a vacuum pump and a pressure gauge has been used as an experimental setup. By fixing the coated Si wafer on top of the glass cylinder and evacuating the glass cylinder to a defined low-pressure, a state of stress is imposed in the thin film due to bending of the wafer. It has been shown that the (initial) stress state of a film and its change, due to its bending with the help of the wafer-curvature method, can be analyzed accurately close to the wafer center by application of one of two independent X-ray diffraction techniques: i) conventional X-ray diffraction stress analysis (i.e. application of the well known sin{sup 2}ψ-method) to reflections originating from the film and ii) determination of the radii of curvature by rocking curve measurements utilizing reflections originating from the substrate. The validation of this stress-imposition method has been carried out with a tungsten film of 500 nm thickness, since tungsten is known to be (practically) intrinsically elastically isotropic. Further, the method has been applied to an electro-deposited, potentially whiskering, aging Sn film of 3 μm thickness where a combination of both stress-measurement techniques is essential for the determination of initial and (by wafer bending) imposed stresses. The results of the aging experiment of the Sn film under load have been discussed with respect to the current whisker-growth model. - Highlights: • A wafer-curvature method has been developed to subject thin films to defined loads. • Two X-ray diffraction techniques were employed for the analysis of stresses. • The wafer-curvature method was validated by application to a W film. • Application to a potentially whiskering

Imposition of defined states of stress on thin films by a wafer-curvature method; validation and application to aging Sn films

International Nuclear Information System (INIS)

Stein, J.; Pascher, M.; Welzel, U.; Huegel, W.; Mittemeijer, E.J.

2014-01-01

A wafer-curvature method has been developed to subject thin films, deposited on (Si) substrates, to well defined and controllable loads in a contact-free manner. To this end, a custom-made glass pan (i.e. a roof-less cylinder with a connection piece for vacuum tubes) connected to a needle valve, a vacuum pump and a pressure gauge has been used as an experimental setup. By fixing the coated Si wafer on top of the glass cylinder and evacuating the glass cylinder to a defined low-pressure, a state of stress is imposed in the thin film due to bending of the wafer. It has been shown that the (initial) stress state of a film and its change, due to its bending with the help of the wafer-curvature method, can be analyzed accurately close to the wafer center by application of one of two independent X-ray diffraction techniques: i) conventional X-ray diffraction stress analysis (i.e. application of the well known sin 2 ψ-method) to reflections originating from the film and ii) determination of the radii of curvature by rocking curve measurements utilizing reflections originating from the substrate. The validation of this stress-imposition method has been carried out with a tungsten film of 500 nm thickness, since tungsten is known to be (practically) intrinsically elastically isotropic. Further, the method has been applied to an electro-deposited, potentially whiskering, aging Sn film of 3 μm thickness where a combination of both stress-measurement techniques is essential for the determination of initial and (by wafer bending) imposed stresses. The results of the aging experiment of the Sn film under load have been discussed with respect to the current whisker-growth model. - Highlights: • A wafer-curvature method has been developed to subject thin films to defined loads. • Two X-ray diffraction techniques were employed for the analysis of stresses. • The wafer-curvature method was validated by application to a W film. • Application to a potentially whiskering Sn

Composite carbon foam electrode

Science.gov (United States)

Mayer, Steven T.; Pekala, Richard W.; Kaschmitter, James L.

1997-01-01

Carbon aerogels used as a binder for granularized materials, including other forms of carbon and metal additives, are cast onto carbon or metal fiber substrates to form composite carbon thin film sheets. The thin film sheets are utilized in electrochemical energy storage applications, such as electrochemical double layer capacitors (aerocapacitors), lithium based battery insertion electrodes, fuel cell electrodes, and electrocapacitive deionization electrodes. The composite carbon foam may be formed by prior known processes, but with the solid particles being added during the liquid phase of the process, i.e. prior to gelation. The other forms of carbon may include carbon microspheres, carbon powder, carbon aerogel powder or particles, graphite carbons. Metal and/or carbon fibers may be added for increased conductivity. The choice of materials and fibers will depend on the electrolyte used and the relative trade off of system resistivty and power to system energy.

Hybrid composite thin films composed of tin oxide nanoparticles and cellulose

International Nuclear Information System (INIS)

Mahadeva, Suresha K; Nayak, Jyoti; Kim, Jaehwan

2013-01-01

This paper reports the preparation and characterization of hybrid thin films consisting of tin oxide (SnO 2 ) nanoparticles and cellulose. SnO 2 nanoparticle loaded cellulose hybrid thin films were fabricated by a solution blending technique, using sodium dodecyl sulfate as a dispersion agent. Scanning and transmission electron microscopy studies revealed uniform dispersion of the SnO 2 nanoparticles in the cellulose matrix. Reduction in the crystalline melting transition temperature and tensile properties of cellulose was observed due to the SnO 2 nanoparticle loading. Potential application of these hybrid thin films as low cost, flexible and biodegradable humidity sensors is examined in terms of the change in electrical resistivity of the material exposed to a wide range of humidity as well as its response–recovery behavior. (paper)

51Cr diffusion in Zr-Sn alloys

International Nuclear Information System (INIS)

Nicolai, L.I.; Migoni, R.L.; Hojvat de Tendler, Ruth

1982-01-01

The 51 Cr volume diffusion in Zr-Sn alloys is measured in polycrystals with big grains by the thin-film method. The Sn content in the alloys ranges from 0.39% at to 6.66 % at. In the beta-phase the analysed temperature range is 982 deg C-1240 deg C. The Sn dehances the 51 Cr diffusion in beta-Zr, the effect being small but well defined. Assuming the formation of Sn-Cr dimers, the linear dehancement coefficient b and the parameters for the variation of b with temperature were calculated. The parameters Q and D o were calculated for the more diluted alloys and, upon application of the Zener theory for D o , a negative contribution to the activation entropy is found. Three experiments at different temperatures were performed in the alpha-phase. 51 Cr diffuses very fast in alpha-Zr-Sn. No definite correlation is found between the 51 Cr diffusivity and the increasing Sn concentration, probably due to the anisotropy of the alfa-phase. (M.E.L.) [es

Inhomogeneous distribution of manganese atoms in ferromagnetic ZnSnAs{sub 2}:Mn thin films on InP revealed by three-dimensional atom probe investigation

Energy Technology Data Exchange (ETDEWEB)

Uchitomi, Naotaka, E-mail: uchitomi@nagaokaut.ac.jp; Inoue, Hiroaki; Kato, Takahiro; Toyota, Hideyuki [Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188 (Japan); Uchida, Hiroshi [Toshiba Nanoanalysis Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)

2015-05-07

Atomic-scale Mn distributions in ferromagnetic ZnSnAs{sub 2}:Mn thin films grown on InP substrates have been studied by applying three-dimensional atom probe (3DAP) microscopy. It is found that Mn atoms in cross-sectional 3DAP maps show the presence of inhomogeneities in Mn distribution, which is characteristic patterns of a spinoidal decomposition phase with slightly high and low concentration regions. The high Mn concentration regions are expected to be coherently clustered MnAs in the zinc-blende structure, resulting in the formation of Mn-As random connecting patterns. The origin of room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn on InP can be well explained by the formation of atomic-scale magnetic clustering by spinoidal decomposition without breaking the continuity of the zinc-blende structure, which has been suggested by previous theoretical works. The lattice-matching between magnetic epi-layers and substrates should be one of the most important factors to avoid the formation of secondary hexagonal MnAs phase precipitates in preparing ferromagnetic semiconductor thin films.

XPS analysis and structural and morphological characterization of Cu{sub 2}ZnSnS{sub 4} thin films grown by sequential evaporation

Energy Technology Data Exchange (ETDEWEB)

Gordillo, G. [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Calderón, C., E-mail: clcalderont@unal.edu.co [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Bartolo-Pérez, P. [Departamento de Física Aplicada, CINVESTAV-IPN, Mérida, Yuc. (Mexico)

2014-06-01

This work describes a procedure to grow single phase Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with tetragonal-kesterite type structure, through sequential evaporation of the elemental metallic precursors under sulphur vapor supplied from an effusion cell. X-ray diffraction analysis (XRD) is mostly used for phase identification but cannot clearly distinguish the formation of secondary phases such as Cu{sub 2}SnS{sub 3} (CTS) because both compounds have the same diffraction pattern; therefore the use of a complementary technique is needed. Raman scattering analysis was used to distinguish these phases. The influence of the preparation conditions on the morphology and phases present in CZTS thin films were investigated through measurements of scanning electron microscopy (SEM) and XRD, respectively. From transmittance measurements, the energy band gap of the CZTS films was estimated to be around 1.45 eV. The limitation of XRD to identify some of the remaining phases after the growth process are investigated and the results of Raman analysis on the phases formed in samples grown by this method are presented. Further, the influence of the preparation conditions on the homogeneity of the chemical composition in the volume was studied by X-ray photoelectron spectroscopy (XPS) analysis.

Experimental characterization of fire-induced response of rigid polyurethane foam

Energy Technology Data Exchange (ETDEWEB)

Chu, T.Y.; Gill, W.; Moore, J.W.; Hobbs, M.L.; Gritzo, L.A.; Moya, J.L.

1995-12-31

Reported is the result of an experimental investigation of fire-induced response of a 96 kg/m{sup 3} closed cell rigid polyurethane foam. The specimen is 0.37 m in diameter, and 152 mm thick, placed in a cylindrical test vessel. The fire condition is simulated by heating the bottom of the test vessel to 1283 K using a radiant heat source. Real-time x-ray shows that the degradation process involves the progression of a charring front into the virgin material. The charred region has a regular and graded structure consisting of a packed bubble outer layer and successive layers of thin shells. The layer-to-layer permeability appears to be poor. There are indications that gas vents laterally. The shell-like structure might be the result of lateral venting. Although the foam degradation process is quite complicated, the in-depth temperature responses in the uncharted foam appear to be consistent with steady state ablation. The measured temperature responses are well represented by the exponential distribution for steady state ablation. An estimate of the thermal diffusivity of the foam is obtained from the ablation model. The experiment is part of a more comprehensive program to develop material response models of foams and encapsulants.

Failure Modes of thin supported Membranes

DEFF Research Database (Denmark)

Hendriksen, Peter Vang; Høgsberg, J.R.; Kjeldsen, Ane Mette

2007-01-01

Four different failure modes relevant to tubular supported membranes (thin dense films on a thick porous support) were analyzed. The failure modes were: 1) Structural collapse due to external pressure 2) burst of locally unsupported areas, 3) formation of surface cracks in the membrane due to TEC......-mismatches, and finally 4) delamination between membrane and support due to expansion of the membrane on use. Design criteria to minimize risk of failure by the four different modes are discussed. The theoretical analysis of the two last failure modes is compared to failures observed on actual components....

FoamVis, A Visualization System for Foam Research: Design and Implementation

OpenAIRE

Lipsa, Dan; Roberts, Richard; Laramee, Robert

2015-01-01

Liquid foams are used in areas such as mineral separation, oil recovery, food and beverage production, sanitation and fire fighting. To improve the quality of products and the efficiency of processes in these areas, foam scientists wish to understand and control foam behaviour. To this end, foam scientists have used foam simulations to model foam behaviour; however, analysing these simulations presents difficult challenges. We describe the main foam research challenges and present the design ...

Influence of sulfurization temperature on Cu2ZnSnS4 absorber layer on flexible titanium substrates for thin film solar cells

Science.gov (United States)

Gokcen Buldu, Dilara; Cantas, Ayten; Turkoglu, Fulya; Gulsah Akca, Fatime; Meric, Ece; Ozdemir, Mehtap; Tarhan, Enver; Ozyuzer, Lutfi; Aygun, Gulnur

2018-02-01

In this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.

Bi-liquid foams

International Nuclear Information System (INIS)

Sonneville, Odile

1997-01-01

Concentrated emulsions have structures similar to foams; for this reason they are also called 'bi-liquid foams'. For oil in water emulsions, they are made of polyhedral oil cells separated by aqueous surfactant films. The limited stability of these Systems is a major nuisance in their applications. In this work, we tried to understand and to control the mechanisms through which bi-liquid foams can loose their stability. In a first stage, we characterized the states of surfactant films in bi-liquid foams submitted to different pressures. We determined their hydration, the surfactant density at interfaces as well as their thicknesses. The bi-liquid foams were made by concentrating hexadecane-in-water emulsions through centrifugation. The initial emulsions contained submicron oil droplets that were completely covered with surfactant. We measured the resistance of the films to dehydration, and we represented it by pressure-film thickness curves or pressure-film hydration curves. We also obtained evidence that the interfacial surfactant density increases when the film thickness is decreased (SDS case). The Newton Black Film state is the most dehydrated metastable state that can be reached. In this state, the films can be described as surfactant bilayers that only contain the hydration water of the surfactant polar heads. Two different processes are involved the destabilization of bi-liquid foams: Ostwald ripening (oil transfer from small cells to large cells) and coalescence (films rupture). The first mechanism can be controlled by choosing oils that are very insoluble in water, avoiding ethoxylated nonionic surfactants of low molecular weight, and making emulsions that are not too fine. The second mechanism is responsible for the catastrophic destabilization of bi-liquid foams made of droplets above one micron or with a low coverage in surfactant. In these cases, destabilization occurs in the early stages of concentration, when the films are still thick. It is caused

Mg{sub 2}Sn heterostructures on Si(111) substrate

Energy Technology Data Exchange (ETDEWEB)

Dózsa, L., E-mail: dozsa@mfa.kfki.hu [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Galkin, N.G. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation); Pécz, B.; Osváth, Z.; Zolnai, Zs. [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Németh, A. [Wigner Research Centre for Physics, Institute for Particle and Nuclear Physics, 1525 Budapest, P.O.B. 49 (Hungary); Galkin, K.N.; Chernev, I.M. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Dotsenko, S.A. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation)

2017-05-31

Highlights: • Investigations show that the nanostructures have significant changes during the applied regular experimental investigations. • It is especially true for transmittance electron microscopy, where the investigated layers have to be thinned near to the nanostructure size. • The time order of the applied experimental investigation has a dominant effect on the experimetal results. - Abstract: Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg{sub 2}Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backscattering measurement spectroscopy (RBS) were used to determine the amount of Mg and Sn in the structures. Raman spectroscopy has shown the layers contain Mg{sub 2}Sn phase. Cross sectional transmission electron microscopy (XTEM) measurements have identified Mg{sub 2}Sn nanocrystallites in hexagonal and cubic phases without epitaxial orientation with respect to the Si(111) substrate. Significant oxygen concentration was found in the layer both by RBS and TEM. The electrical measurements have shown laterally homogeneous conductivity in the grown layer. The undoped Mg{sub 2}Sn layers show increasing resistivity with increasing temperature indicating the scattering process dominates the resistance of the layers, i.e. large concentration of point defects was generated in the layer during the growth process. The Al doped layer shows increase of the resistance at low temperature caused by freeze out of free carriers in the Al doped Mg{sub 2}Sn layer. The measurements indicate the necessity of protective layer grown over the Mg{sub 2}Sn layers, and a short time delay between sample preparation and cross sectionalTEM analysis, since the unprotected layer is degraded by the interaction with the ambient.

Reversed preparation of low-density poly(divinylbenzene/styrene) foam columns coated with gold films

Energy Technology Data Exchange (ETDEWEB)

Dai, Yinhai; Wang, Ni; Li, Yaling; Yao, Mengqi; Gan, Haibo; Hu, Wencheng, E-mail: huwc@uestc.edu.cn

2016-06-15

Highlights: • A reversed fabrication of low density foam columns coated with gold films was proposed. • The uniformity in thickness and purity of gold film are easy to be controlled. • A compact layer is prepared through an electrophoretic deposition method. • A low density (12 mg/cc) foam column coated with gold film is obtained. - Abstract: This work aims to fabricate low-density, porous, non-conductive, structural poly(divinylbenzene/styrene) foam columns by high-internal-phase emulsion templating. We prepare these non-conductive foam columns coated with a thin gold layer by electrochemical deposition and the reversed preparation technique. As expected, the density of the foam obtained through this novel method was about 12 mg cm{sup −3}, and the thickness of the gold coating was about 3 μm. We performed field emission scanning electron microscopy to morphologically and microstructurally characterize the products and X-ray diffraction and energy dispersive spectroscopy to determine the composition of the gold coating.

Studies of the labelling of human serum albumin with 99mTc using Sn(II) tartrate and Sn(II)Cl2 as reducing agents

International Nuclear Information System (INIS)

El-Kolaly, M.T.; El-Asrag, H.A.; El-Wetery, A.S.; El-Mohty, A.A.

1990-01-01

A comparative study has been carried out on the effect of Sn(II) tartrate and Sn(II)Cl 2 on the labelling efficiency and tissue distribution of 99m Tc-human serum albumin. The effect of reductant content, reaction time (incubation time), albumin content, pH, and ascorbic acid on the efficiency of labelling and the tissue distribution of the labelled albumin has been investigated. The percentage of labelling was determined by paper and thin layer radiochromatography. Ascorbic acid shows no effect on either labelling efficiency or tissue distribution of 99m Tc-HSA prepared by Sn(II) tartrate or Sn(II)Cl 2 . (author)

TDPAC study of Cd-doped SnO

Energy Technology Data Exchange (ETDEWEB)

Munoz, E. L., E-mail: munoz@fisica.unlp.edu.ar [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina); Carbonari, A. W. [Instituto de Pesquisas Energeticas y Nucleares-IPEN-CNEN/SP (Brazil); Errico, L. A. [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina); Bibiloni, A. G. [Universidad Nacional de La Plata, Departamento de Fisica, Facultad de Ciencias Exactas (Argentina); Petrilli, H. M. [Universidade de Sao Paulo, Instituto de Fisica (Brazil); Renteria, M. [Universidad Nacional de La Plata, Departamento de Fisica-IFLP (CCT-La Plata, CONICET-UNLP), Facultad de Ciencias Exactas (Argentina)

2007-07-15

The combination of hyperfine techniques and ab initio calculations has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids. A recent example has been the study of Cd-doped SnO, where ab initio calculations questioned previous TDPAC assignments of the electric-field gradient (EFG) in {sup 111}In-implanted Sn-O thin films. Here we present new TDPAC experiments at {sup 111}In-diffused polycrystalline SnO. A reversible temperature dependence of the EFG was observed in the range 295-900 K. The TDPAC results were compared with theoretical calculations performed with the full-potential linearized augmented plane wave (FP-LAPW) method, in the framework of the density functional theory. Through the comparison with the theoretical results, we infer that different electronic surroundings around Cd impurities can coexist in the SnO sample.

TDPAC study of Cd-doped SnO

International Nuclear Information System (INIS)

Munoz, E. L.; Carbonari, A. W.; Errico, L. A.; Bibiloni, A. G.; Petrilli, H. M.; Renteria, M.

2007-01-01

The combination of hyperfine techniques and ab initio calculations has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids. A recent example has been the study of Cd-doped SnO, where ab initio calculations questioned previous TDPAC assignments of the electric-field gradient (EFG) in 111 In-implanted Sn-O thin films. Here we present new TDPAC experiments at 111 In-diffused polycrystalline SnO. A reversible temperature dependence of the EFG was observed in the range 295-900 K. The TDPAC results were compared with theoretical calculations performed with the full-potential linearized augmented plane wave (FP-LAPW) method, in the framework of the density functional theory. Through the comparison with the theoretical results, we infer that different electronic surroundings around Cd impurities can coexist in the SnO sample.

Experiments to Populate and Validate a Processing Model for Polyurethane Foam: Additional Data for Structural Foams

Energy Technology Data Exchange (ETDEWEB)

Rao, Rekha R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Celina, Mathias C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Giron, Nicholas Henry [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Long, Kevin Nicholas [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Russick, Edward M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2015-01-01

We are developing computational models to help understand manufacturing processes, final properties and aging of structural foam, polyurethane PMDI. Th e resulting model predictions of density and cure gradients from the manufacturing process will be used as input to foam heat transfer and mechanical models. BKC 44306 PMDI-10 and BKC 44307 PMDI-18 are the most prevalent foams used in structural parts. Experiments needed to parameterize models of the reaction kinetics and the equations of motion during the foam blowing stages were described for BKC 44306 PMDI-10 in the first of this report series (Mondy et al. 2014). BKC 44307 PMDI-18 is a new foam that will be used to make relatively dense structural supports via over packing. It uses a different catalyst than those in the BKC 44306 family of foams; hence, we expect that the reaction kineti cs models must be modified. Here we detail the experiments needed to characteriz e the reaction kinetics of BKC 44307 PMDI-18 and suggest parameters for the model based on these experiments. In additi on, the second part of this report describes data taken to provide input to the preliminary nonlinear visco elastic structural response model developed for BKC 44306 PMDI-10 foam. We show that the standard cu re schedule used by KCP does not fully cure the material, and, upon temperature elevation above 150°C, oxidation or decomposition reactions occur that alter the composition of the foam. These findings suggest that achieving a fully cured foam part with this formulation may be not be possible through therma l curing. As such, visco elastic characterization procedures developed for curing thermosets can provide only approximate material properties, since the state of the material continuously evolves during tests.

Method of forming a continuous polymeric skin on a cellular foam material

Science.gov (United States)

Duchane, David V.; Barthell, Barry L.

1985-01-01

Hydrophobic cellular material is coated with a thin hydrophilic polymer skin which stretches tightly over the outer surface of the foam but which does not fill the cells of the foam, thus resulting in a polymer-coated foam structure having a smoothness which was not possible in the prior art. In particular, when the hydrophobic cellular material is a specially chosen hydrophobic polymer foam and is formed into arbitrarily chosen shapes prior to the coating with hydrophilic polymer, inertial confinement fusion (ICF) targets of arbitrary shapes can be produced by subsequently coating the shapes with metal or with any other suitable material. New articles of manufacture are produced, including improved ICF targets, improved integrated circuits, and improved solar reflectors and solar collectors. In the coating method, the cell size of the hydrophobic cellular material, the viscosity of the polymer solution used to coat, and the surface tensin of the polymer solution used to coat are all very important to the coating.

Experimental Study on Fatigue Performance of Foamed Lightweight Soil

Science.gov (United States)

Qiu, Youqiang; Yang, Ping; Li, Yongliang; Zhang, Liujun

2017-12-01

In order to study fatigue performance of foamed lightweight soil and forecast its fatigue life in the supporting project, on the base of preliminary tests, beam fatigue tests on foamed lightweight soil is conducted by using UTM-100 test system. Based on Weibull distribution and lognormal distribution, using the mathematical statistics method, fatigue equations of foamed lightweight soil are obtained. At the same time, according to the traffic load on real road surface of the supporting project, fatigue life of formed lightweight soil is analyzed and compared with the cumulative equivalent axle loads during the design period of the pavement. The results show that even the fatigue life of foamed lightweight soil has discrete property, the linear relationship between logarithmic fatigue life and stress ratio still performs well. Especially, the fatigue life of Weibull distribution is more close to that derived from the lognormal distribution, in the instance of 50% guarantee ratio. In addition, the results demonstrated that foamed lightweight soil as subgrade filler has good anti-fatigue performance, which can be further adopted by other projects in the similar research domain.

Photoelectrochemical Characterization of Sprayed α-Fe2O3 Thin Films: Influence of Si Doping and SnO2 Interfacial Layer

Directory of Open Access Journals (Sweden)

Yongqi Liang

2008-01-01

Full Text Available α-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc3. The donor density in the Fe2O3 films could be tuned between 1017–1020 cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting substrates, both the reproducibility and the photocurrent can be enhanced. The effects of Si doping and the presence of the SnO2 interfacial layer were systematically studied. The highest photoresponse is obtained for Fe2O3 doped with 0.2% Si, resulting in a photocurrent of 0.37 mA/cm2 at 1.23 VRHE in a 1.0 M KOH solution under 80 mW/cm2 AM1.5 illumination.

Growth of carbon nanofilaments on coal foams

Energy Technology Data Exchange (ETDEWEB)

Montserrat Calvo; Ana Arenillas; Roberto Garcia; Sabino R. Moinelo [Instituto Nacional del Carbon (INCAR), Oviedo (Spain)

2009-01-15

Nanofilamentous carbon was grown on a carbon foam by catalytic chemical vapour deposition (CVD) using the decomposition of ethylene/hydrogen mixtures over Ni. The carbon foam was obtained from a coal by a two-stage thermal process, with the first stage taking place at a temperature within the plastic region of the precursor coal. The extent of porosity and the pore size of the foam were mainly influenced by the pressure reached in the reactor during the first stage. In the CVD process, 700{sup o}C was the optimum temperature for obtaining good yields of nanofilaments. A low ethylene/hydrogen ratio (1/4) in the reactive gas gave rise to almost only short and thin carbon nanostructures. A higher proportion of C{sub 2}H{sub 4} (4/1, C{sub 2}H{sub 4}/H{sub 2}) gave better yields of nanofilaments, with good proportions of higher-length and higher-diameter (up to around 0.5 {mu}m) structures. Among the carbon forms produced, transmission electron microscopy revealed the predominance of fishbone-type nanofibres, with some bamboo-like nanotubes being also observed. 41 refs., 7 figs., 3 tabs.

Cu{sub 2}ZnSnS{sub 4} solar cells prepared by sulfurization of sputtered ZnS/Sn/CuS precursors

Energy Technology Data Exchange (ETDEWEB)

Li, Zhi-Shan; Wang, Shu-Rong, E-mail: shrw88@aliyun.com; Jiang, Zhi; Yang, Min; Lu, Yi-Lei; Liu, Si-Jia; Zhao, Qi-Chen; Hao, Rui-Ting

2016-12-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown on Mo-coated Soda-lime-glass (SLG) substrates by sulfurization of sputtered ZnS/Sn/CuS precursors at different temperatures i.e. 560 °C, 580 °C and 600 °C. The effects of sulfurization temperature on the quality of CZTS thin films and solar cells were investigated. The crystal structure, surface morphology, chemical composition, phase purity and surface roughness of CZTS thin films fabricated at different sulfurization temperatures were characterized by X Ray Diffraction (XRD), scanning electron microscopy (SEM) equipped with an energy dispersive spectrometer (EDS), Raman spectroscopy and atomic force microscope (AFM), respectively. The results show that all CZTS thin films exhibit a polycrystalline kesterite structure and preferred (112) orientation. For the sulfurization temperature of 580 °C, the obtained CZTS thin films are dense and flat with larger grain size. Meanwhile composition studying indicates that the fabricated CZTS with single phase is copper poor and zinc rich. Furthermore, the surface roughness of CZTS film is the lowest. Finally, the CZTS solar cells with the structure of SLG/Mo/CZTS/CdS/i-ZnO/ITO/Al were fabricated and demonstrated the best power conversion efficiency of 3.59% when used sulfurization temperature was 580 °C.

Impact of deposition temperature on the properties of SnS thin films grown over silicon substrate—comparative study of structural and optical properties with films grown on glass substrates

Science.gov (United States)

Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

2017-11-01

Tin sulfide (SnS) thin films were chemically deposited over silicon substrate in a temperature range of 250 °C-400 °C. The effects of deposition temperature on the structural, morphological and optical properties of the films were evaluated. All films present an orthorhombic SnS structure with a preferred orientation along (040). High absorption coefficients (in the range of 105 cm-1) were found for all obtained films with an increase in α value when deposition temperature decreases. Furthermore, the effects of substrate type were investigated based on comparison between the present results and those obtained for SnS films grown under the same deposition conditions but over glass substrate. The results suggest that the formation of SnS films onto glass substrate is faster than onto silicon substrate. It is found that the substrate nature affects the orientation growth of the films and that SnS films deposited onto Si present more defects than those deposited onto glass substrate. The optical transmittance is also restricted by the substrate type, mostly below 1000 nm. The obtained results for SnS films onto silicon suggest their promising integration within optoelectronic devices.

Role of foam drainage in producing protein aggregates in foam fractionation.

Science.gov (United States)

Li, Rui; Zhang, Yuran; Chang, Yunkang; Wu, Zhaoliang; Wang, Yanji; Chen, Xiang'e; Wang, Tao

2017-10-01

It is essential to obtain a clear understanding of the foam-induced protein aggregation to reduce the loss of protein functionality in foam fractionation. The major effort of this work is to explore the roles of foam drainage in protein aggregation in the entire process of foam fractionation with bovine serum albumin (BSA) as a model protein. The results show that enhancing foam drainage increased the desorption of BSA molecules from the gas-liquid interface and the local concentration of desorbed molecules in foam. Therefore, it intensified the aggregation of BSA in foam fractionation. Simultaneously, it also accelerated the flow of BSA aggregates from rising foam into the residual solution along with the drained liquid. Because enhancing foam drainage increased the relative content of BSA molecules adsorbed at the gas-liquid interface, it also intensified the aggregation of BSA during both the defoaming process and the storage of the foamate. Furthermore, enhancing foam drainage more readily resulted in the formation of insoluble BSA aggregates. The results are highly important for a better understanding of foam-induced protein aggregation in foam fractionation. Copyright © 2017 Elsevier B.V. All rights reserved.

SiSn diodes: Theoretical analysis and experimental verification

KAUST Repository

Hussain, Aftab M.

2015-08-24

We report a theoretical analysis and experimental verification of change in band gap of silicon lattice due to the incorporation of tin (Sn). We formed SiSn ultra-thin film on the top surface of a 4 in. silicon wafer using thermal diffusion of Sn. We report a reduction of 0.1 V in the average built-in potential, and a reduction of 0.2 V in the average reverse bias breakdown voltage, as measured across the substrate. These reductions indicate that the band gap of the silicon lattice has been reduced due to the incorporation of Sn, as expected from the theoretical analysis. We report the experimentally calculated band gap of SiSn to be 1.11 ± 0.09 eV. This low-cost, CMOS compatible, and scalable process offers a unique opportunity to tune the band gap of silicon for specific applications.

Graphene-supported SnO2 nanoparticles prepared by a solvothermal approach for an enhanced electrochemical performance in lithium-ion batteries.

Science.gov (United States)

Wang, Bei; Su, Dawei; Park, Jinsoo; Ahn, Hyojun; Wang, Guoxiu

2012-04-13

SnO2 nanoparticles were dispersed on graphene nanosheets through a solvothermal approach using ethylene glycol as the solvent. The uniform distribution of SnO2 nanoparticles on graphene nanosheets has been confirmed by scanning electron microscopy and transmission electron microscopy. The particle size of SnO2 was determined to be around 5 nm. The as-synthesized SnO2/graphene nanocomposite exhibited an enhanced electrochemical performance in lithium-ion batteries, compared with bare graphene nanosheets and bare SnO2 nanoparticles. The SnO2/graphene nanocomposite electrode delivered a reversible lithium storage capacity of 830 mAh g-1 and a stable cyclability up to 100 cycles. The excellent electrochemical properties of this graphene-supported nanocomposite could be attributed to the insertion of nanoparticles between graphene nanolayers and the optimized nanoparticles distribution on graphene nanosheets.

Foam generation and sample composition optimization for the FOAM-C experiment of the ISS

International Nuclear Information System (INIS)

Carpy, R; Picker, G; Amann, B; Ranebo, H; Vincent-Bonnieu, S; Minster, O; Winter, J; Dettmann, J; Castiglione, L; Höhler, R; Langevin, D

2011-01-01

End of 2009 and early 2010 a sealed cell, for foam generation and observation, has been designed and manufactured at Astrium Friedrichshafen facilities. With the use of this cell, different sample compositions of 'wet foams' have been optimized for mixtures of chemicals such as water, dodecanol, pluronic, aethoxisclerol, glycerol, CTAB, SDS, as well as glass beads. This development is performed in the frame of the breadboarding development activities of the Experiment Container FOAM-C for operation in the ISS Fluid Science Laboratory (ISS). The sample cell supports multiple observation methods such as: Diffusing-Wave and Diffuse Transmission Spectrometry, Time Resolved Correlation Spectroscopy and microscope observation, all of these methods are applied in the cell with a relatively small experiment volume 3 . These units, will be on orbit replaceable sets, that will allow multiple sample compositions processing (in the range of >40).

Generation of sclerosant foams by mechanical methods increases the foam temperature.

Science.gov (United States)

Tan, Lulu; Wong, Kaichung; Connor, David; Fakhim, Babak; Behnia, Masud; Parsi, Kurosh

2017-08-01

Objective To investigate the effect of agitation on foam temperature. Methods Sodium tetradecyl sulphate and polidocanol were used. Prior to foam generation, the sclerosant and all constituent equipment were cooled to 4-25℃ and compared with cooling the sclerosant only. Foam was generated using a modified Tessari method. During foam agitation, the temperature change was measured using a thermocouple for 120 s. Results Pre-cooling all the constituent equipment resulted in a cooler foam in comparison with only cooling the sclerosant. A starting temperature of 4℃ produced average foam temperatures of 12.5 and 13.2℃ for sodium tetradecyl sulphate and polidocanol, respectively. It was also found that only cooling the liquid sclerosant provided minimal cooling to the final foam temperature, with the temperature 20 and 20.5℃ for sodium tetradecyl sulphate and polidocanol, respectively. Conclusion The foam generation process has a noticeable impact on final foam temperature and needs to be taken into consideration when creating foam.

FoamVis, A Visualization System for Foam Research: Design and Implementation

Directory of Open Access Journals (Sweden)

Dan R. Lipsa

2015-03-01

Full Text Available Liquid foams are used in areas such as mineral separation, oil recovery, food and beverage production, sanitation and fire fighting. To improve the quality of products and the efficiency of processes in these areas, foam scientists wish to understand and control foam behaviour. To this end, foam scientists have used foam simulations to model foam behaviour; however, analysing these simulations presents difficult challenges. We describe the main foam research challenges and present the design of FoamVis, the only existing visualization, exploration and analysis application created to address them. We describe FoamVis’ main features, together with relevant design and implementation notes. Our goal is to provide a global overview and individual feature implementation details that would allow a visualization scientist to extend the FoamVis system with new algorithms and adapt it to new requirements. The result is a detailed presentation of the software that is not provided in previous visualization research papers.

Crystallographic structure and grain size of polycrystalline Cu{sub 2}ZnSnS{sub 4} nanoparticles and thin films studied with XRD and SEM

Energy Technology Data Exchange (ETDEWEB)

Zutz, Folker; Chory, Christine; Riedel, Ingo; Parisi, Juergen [Thin Film Photovoltaics, Energy and Semiconductor Research Laboratory, University of Oldenburg, D-26111 Oldenburg (Germany)

2011-07-01

Cu{sub 2}ZnSnS{sub 4} (CZTS) is a compound semiconductor with an absorption coefficient of >10{sup 4} cm{sup -1} and energy gap of about 1.5 eV. Because CZTS is comprised of abundant and non-toxic precursor elements the semiconductor represents an attractive material for low-cost thin film solar cells. CZTS nanoparticles (NP) were prepared in a low-temperature colloidal synthesis yielding high amounts per synthesis cycle. For thin film deposition the NPs were converted to an ink which can be processed to thin films via printing techniques. Finally, the thin films were annealed in argon atmosphere at different temperatures in order to control the growth of microcrystallites. The photoelectrical quality of the semiconductor sensitively depends on the relative concentrations of the precursor elements (band gap, crystallographic phases) and the average grain size (charge transport). We report on structural investigations (X-ray diffraction, electron microscopy) of CZTS dried powders and thin films processed from inks with varying chemical compositions. Further, the evolution of the grain size was studied as function of the annealing temperature.

Investigation of Cu2ZnSnS4 nanoparticles for thin-film solar cell applications

DEFF Research Database (Denmark)

Engberg, Sara Lena Josefin; Agersted, Karsten; Crovetto, Andrea

2017-01-01

We study the effect of the annealing atmosphere on grain growth of ligand-free and ligand-coated Cu2ZnSnS4 (CZTS) nanoparticle-based thin films by thermal analysis. We use thermogravimetric analysis (TGA) coupled with mass spectrometry (MS) to simultaneously monitor mass changes and evolved gases...... of both nanoparticle powders and inks. The investigation focuses on annealing in air, nitrogen and forming gas (5% H2 in Ar), i.e., oxidizing, inert, and reducing atmospheres. We find that the oleylamine capping ligands thermally decompose into smaller organic fragments starting below its boiling point......, with a slightly higher decomposition rate in reducing atmosphere. With nanoparticle inks, very modest grain growth is observed, with no differences between the atmospheres. Conversely, with nanoparticle powders, micron-sized grains appear all over for the ligand-free sample and some micron-sized grains are seen...

Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

Science.gov (United States)

Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

2015-12-01

The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

Biopolymer foams - Relationship between material characteristics and foaming behavior of cellulose based foams

International Nuclear Information System (INIS)

Rapp, F.; Schneider, A.; Elsner, P.

2014-01-01

Biopolymers are becoming increasingly important to both industry and consumers. With regard to waste management, CO 2 balance and the conservation of petrochemical resources, increasing efforts are being made to replace standard plastics with bio-based polymers. Nowadays biopolymers can be built for example of cellulose, lactic acid, starch, lignin or bio mass. The paper will present material properties of selected cellulose based polymers (cellulose propionate [CP], cellulose acetate butyrate [CAB]) and corresponding processing conditions for particle foams as well as characterization of produced parts. Special focus is given to the raw material properties by analyzing thermal behavior (differential scanning calorimetry), melt strength (Rheotens test) and molecular weight distribution (gel-permeation chromatography). These results will be correlated with the foaming behavior in a continuous extrusion process with physical blowing agents and underwater pelletizer. Process set-up regarding particle foam technology, including extrusion foaming and pre-foaming, will be shown. The characteristics of the resulting foam beads will be analyzed regarding part density, cell morphology and geometry. The molded parts will be tested on thermal conductivity as well as compression behavior (E-modulus, compression strength)

Biopolymer foams - Relationship between material characteristics and foaming behavior of cellulose based foams

Science.gov (United States)

Rapp, F.; Schneider, A.; Elsner, P.

2014-05-01

Biopolymers are becoming increasingly important to both industry and consumers. With regard to waste management, CO2 balance and the conservation of petrochemical resources, increasing efforts are being made to replace standard plastics with bio-based polymers. Nowadays biopolymers can be built for example of cellulose, lactic acid, starch, lignin or bio mass. The paper will present material properties of selected cellulose based polymers (cellulose propionate [CP], cellulose acetate butyrate [CAB]) and corresponding processing conditions for particle foams as well as characterization of produced parts. Special focus is given to the raw material properties by analyzing thermal behavior (differential scanning calorimetry), melt strength (Rheotens test) and molecular weight distribution (gel-permeation chromatography). These results will be correlated with the foaming behavior in a continuous extrusion process with physical blowing agents and underwater pelletizer. Process set-up regarding particle foam technology, including extrusion foaming and pre-foaming, will be shown. The characteristics of the resulting foam beads will be analyzed regarding part density, cell morphology and geometry. The molded parts will be tested on thermal conductivity as well as compression behavior (E-modulus, compression strength).

Rotating solid foam reactors : mass transfer and reaction rate

NARCIS (Netherlands)

Tschentscher, R.

2012-01-01

In this thesis the performance and applicability of rotating solid foam stirrers is investigated. The stirrer consists, thereby of a solid, highly porous structure, which is used as stirrer and catalyst support simultaneously. The solid foam block occupies a large part of the reactor volume.

Liquid foam templating - A route to tailor-made polymer foams.

Science.gov (United States)

Andrieux, Sébastien; Quell, Aggeliki; Stubenrauch, Cosima; Drenckhan, Wiebke

2018-06-01

Solid foams with pore sizes between a few micrometres and a few millimetres are heavily exploited in a wide range of established and emerging applications. While the optimisation of foam applications requires a fine control over their structural properties (pore size distribution, pore opening, foam density, …), the great complexity of most foaming processes still defies a sound scientific understanding and therefore explicit control and prediction of these parameters. We therefore need to improve our understanding of existing processes and also develop new fabrication routes which we understand and which we can exploit to tailor-make new porous materials. One of these new routes is liquid templating in general and liquid foam templating in particular, to which this review article is dedicated. While all solid foams are generated from an initially liquid(-like) state, the particular notion of liquid foam templating implies the specific condition that the liquid foam has time to find its "equilibrium structure" before it is solidified. In other words, the characteristic time scales of the liquid foam's stability and its solidification are well separated, allowing to build on the vast know-how on liquid foams established over the last 20 years. The dispersed phase of the liquid foam determines the final pore size and pore size distribution, while the continuous phase contains the precursors of the desired porous scaffold. We review here the three key challenges which need to be addressed by this approach: (1) the control of the structure of the liquid template, (2) the matching of the time scales between the stability of the liquid template and solidification, and (3) the preservation of the structure of the template throughout the process. Focusing on the field of polymer foams, this review gives an overview of recent research on the properties of liquid foam templates and summarises a key set of studies in the emerging field of liquid foam templating. It

Single-Crystal Growth of Cl-Doped n-Type SnS Using SnCl2 Self-Flux.

Science.gov (United States)

Iguchi, Yuki; Inoue, Kazutoshi; Sugiyama, Taiki; Yanagi, Hiroshi

2018-06-05

SnS is a promising photovoltaic semiconductor owing to its suitable band gap energy and high optical absorption coefficient for highly efficient thin film solar cells. The most significant carnage is demonstration of n-type SnS. In this study, Cl-doped n-type single crystals were grown using SnCl 2 self-flux method. The obtained crystal was lamellar, with length and width of a few millimeters and thickness ranging between 28 and 39 μm. X-ray diffraction measurements revealed the single crystals had an orthorhombic unit cell. Since the ionic radii of S 2- and Cl - are similar, Cl doping did not result in substantial change in lattice parameter. All the elements were homogeneously distributed on a cleaved surface; the Sn/(S + Cl) ratio was 1.00. The crystal was an n-type degenerate semiconductor with a carrier concentration of ∼3 × 10 17 cm -3 . Hall mobility at 300 K was 252 cm 2 V -1 s -1 and reached 363 cm 2 V -1 s -1 at 142 K.

Structural and optical properties of Cu2SnS3 thin films obtained by SILAR method

Directory of Open Access Journals (Sweden)

Aykut ASTAM

2017-06-01

Full Text Available Cu2SnS3 thin films were obtained by annealing of SILAR deposited films at 350°C for 1 hour in sulphur atmosphere. The structural and optical properties of the films were investigated using X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive X-ray analysis (EDAX and optical absorption measurements, before and after annealing. The XRD results showed that the annealing process transformed the crystal structure of the films from amorphous to polycrystalline. SEM images revealed that the surface morphology of films was changed after annealing while EDAX analysis showed that the films were excess in copper concentration before and after annealing. Optical absorption measurements confirmed that the direct band gap of films decreased from 1.27 eV to 1.21 eV with annealing.

Spectral and ion emission features of laser-produced Sn and SnO2 plasmas

Science.gov (United States)

Hui, Lan; Xin-Bing, Wang; Du-Luo, Zuo

2016-03-01

We have made a detailed comparison of the atomic and ionic debris, as well as the emission features of Sn and SnO2 plasmas under identical experimental conditions. Planar slabs of pure metal Sn and ceramic SnO2 are irradiated with 1.06 μm, 8 ns Nd:YAG laser pulses. Fast photography employing an intensified charge coupled device (ICCD), optical emission spectroscopy (OES), and optical time of flight emission spectroscopy are used as diagnostic tools. Our results show that the Sn plasma provides a higher extreme ultraviolet (EUV) conversion efficiency (CE) than the SnO2 plasma. However, the kinetic energies of Sn ions are relatively low compared with those of SnO2. OES studies show that the Sn plasma parameters (electron temperature and density) are lower compared to those of the SnO2 plasma. Furthermore, we also give the effects of the vacuum degree and the laser pulse energy on the plasma parameters. Project supported by the National Natural Science Foundation of China (Grant No. 11304235) and the Director Fund of WNLO, China.

Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

KAUST Repository

Alshammari, Fwzah Hamud

2017-08-04

Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93% transparency in most of the visible range of the electromagnetic spectrum. Thin-film transistors fabricated with SnO2 gates show excellent transistor properties including saturation mobility of 15.3 cm2 V−1 s−1, a low subthreshold swing of ≈130 mV dec−1, a high on/off ratio of ≈109, and an excellent electrical stability under constant-voltage stressing conditions to the gate terminal. Moreover, the SnO2-gated thin-film transistors show excellent electrical characteristics when used in electronic circuits such as negative channel metal oxide semiconductor (NMOS) inverters and ring oscillators. The NMOS inverters exhibit a low propagation stage delay of ≈150 ns with high DC voltage gain of ≈382. A high oscillation frequency of ≈303 kHz is obtained from the output sinusoidal signal of the 11-stage NMOS inverter-based ring oscillators. These results show that SnO2 can effectively replace ITO in transparent electronics and sensor applications.

Finite Element Analysis and Crashworthiness Optimization of Foam-filled Double Circular under Oblique Loading

Directory of Open Access Journals (Sweden)

Fauzan Djamaluddin

Full Text Available Abstract Finite element analysis and optimization design carry out for the quasi static responses of foam-filled double circular tube is presented in this paper. In the investigation of the crashworthiness capability, some aspects were considered for variations in geometry parameters of tubes and the loading condition to investigate the crashworthiness capability. Empty, foam-filled, and full foam-filled doublé tubes of thin walled structures were observed subjected to oblique impact (0˚ - 40˚. The numerical solution was used to determine the crashworthiness parameters. In addition, NSGA II and Radial Basis Function were used to optimize the crashworthiness capability of tubes. In conclution, the crash performaces of foam-filled double tube is better than the other structures in this work. The outcome that expected is the new design information of various kinds of cylindrical tubes for energy absorber application.

Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

Science.gov (United States)

Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

2017-07-01

Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

Low-temperature heteroepitaxial growth of InAlAs layers on ZnSnAs{sub 2}/InP(001)

Energy Technology Data Exchange (ETDEWEB)

Oomae, Hiroto; Suzuki, Akiko; Toyota, Hideyuki; Uchitomi, Naotaka [Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Niigata (Japan); Nakamura, Shin' ichi [Center for Instrumental Analysis, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara 252-0206, Kanagawa (Japan)

2015-06-15

We studied the epitaxial growth of InAlAs on ZnSnAs{sub 2} thin films to establish magnetic heterostructures involving ferromagnetic Mn-doped ZnSnAs{sub 2} (ZnSnAs{sub 2}:Mn) thin films. These heterostructures were successfully grown at temperatures around 300 C to maintain room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn. Reflection high-energy electron diffraction, X-ray diffraction measurements and cross-sectional transmission electron microscopy revealed that the InAlAs layers were pseudomorphically lattice-matched with ZnSnAs{sub 2,} even at the low temperature of 300 C. We attempted to prepare magnetic quantum well structures from the InAlAs/ZnSnAs{sub 2}:Mn magnetic multilayer structure. We found that InAlAs layers heteroepitaxially grown on ZnSnAs{sub 2} and ferromagnetic ZnSnAs{sub 2}:Mn films are suitable for preparing InP-based magnetic semiconductor quantum structures. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Multi objective optimization of foam-filled circular tubes for quasi-static and dynamic responses

Directory of Open Access Journals (Sweden)

Fauzan Djamaluddin

Full Text Available AbstractFuel consumption and safety are currently key aspects in automobile design. The foam-filled thin-walled aluminium tube represents a potentially effective material for use in the automotive industry, due to its energy absorption capability and light weight. Multi-objective crashworthiness design optimization for foam-filled double cylindrical tubes is presented in this paper. The double structures are impacted by a rigid wall simulating quasi-static and dynamic loadings. The optimal parameters under consideration are the minimum peak crushing force and maximum specific energy absorption, using the non-dominated sorting genetic algorithm-II (NSGA-II technique. Radial basis functions (RBF and D-Optimal are adopted to determine the more complex crashworthiness functional objectives. The comparison is performed by finite element analysis of the impact crashworthiness characteristics in tubes under static and dynamic loads. Finally, the optimum crashworthiness performance of empty and foam-filled double tubes is investigated and compared to the traditional single foam-filled tube. The results indicate that the foam-filled double aluminium circular tube can be recommended for crashworthy structures.

Foam Microrheology

International Nuclear Information System (INIS)

KRAYNIK, ANDREW M.; LOEWENBERG, MICHAEL; REINELT, DOUGLAS A.

1999-01-01

The microrheology of liquid foams is discussed for two different regimes: static equilibrium where the capillary number Ca is zero, and the viscous regime where viscosity and surface tension are important and Ca is finite. The Surface Evolver is used to calculate the equilibrium structure of wet Kelvin foams and dry soap froths with random structure, i.e., topological disorder. The distributions of polyhedra and faces are compared with the experimental data of Matzke. Simple shearing flow of a random foam under quasistatic conditions is also described. Viscous phenomena are explored in the context of uniform expansion of 2D and 3D foams at low Reynolds number. Boundary integral methods are used to calculate the influence of Ca on the evolution of foam microstructure, which includes bubble shape and the distribution of liquid between films, Plateau borders, and (in 3D) the nodes where Plateau borders meet. The micromechanical point of view guides the development of structure-property-processing relationships for foams

dsmcFoam+: An OpenFOAM based direct simulation Monte Carlo solver

Science.gov (United States)

White, C.; Borg, M. K.; Scanlon, T. J.; Longshaw, S. M.; John, B.; Emerson, D. R.; Reese, J. M.

2018-03-01

dsmcFoam+ is a direct simulation Monte Carlo (DSMC) solver for rarefied gas dynamics, implemented within the OpenFOAM software framework, and parallelised with MPI. It is open-source and released under the GNU General Public License in a publicly available software repository that includes detailed documentation and tutorial DSMC gas flow cases. This release of the code includes many features not found in standard dsmcFoam, such as molecular vibrational and electronic energy modes, chemical reactions, and subsonic pressure boundary conditions. Since dsmcFoam+ is designed entirely within OpenFOAM's C++ object-oriented framework, it benefits from a number of key features: the code emphasises extensibility and flexibility so it is aimed first and foremost as a research tool for DSMC, allowing new models and test cases to be developed and tested rapidly. All DSMC cases are as straightforward as setting up any standard OpenFOAM case, as dsmcFoam+ relies upon the standard OpenFOAM dictionary based directory structure. This ensures that useful pre- and post-processing capabilities provided by OpenFOAM remain available even though the fully Lagrangian nature of a DSMC simulation is not typical of most OpenFOAM applications. We show that dsmcFoam+ compares well to other well-known DSMC codes and to analytical solutions in terms of benchmark results.

A Review of SnSe: Growth and Thermoelectric Properties

Science.gov (United States)

Nguyen, Van Quang; Kim, Jungdae; Cho, Sunglae

2018-04-01

SnSe is a 2D semiconductor with an indirect energy gap of 0.86 - 1 eV; it is widely used in solar cell, optoelectronics, and electronic device applications. Recently, SnSe has been considered as a robust candidate for energy conversion applications due to its high thermoelectric performance ( ZT = 2.6 in p-type and 2.2 in n-type), which is assigned mainly to its anhamornic bonding leading to an ultralow thermal conductivity. In this review, we first discuss the crystalline and electronic structures of SnSe and the source of its p-type characteristic. Then, some typical single crystal and polycrystal growth techniques, as well as an epitaxial thin film growth technique, are outlined. The reported thermoelectric properties of SnSe grown by using each technique are also reviewed. Finally, we will describe some remaining issues concerning the use of SnSe for thermoelectric applications.

Forming and bending of metal foams

International Nuclear Information System (INIS)

Nebosky, Paul; Tyszka, Daniel; Niebur, Glen; Schmid, Steven

2004-01-01

This study examines the formability of a porous tantalum foam, known as trabecular metal (TM). Used as a bone ingrowth surface on orthopedic implants, TM is desirable due to its combination of high strength, low relative density, and excellent osteoconductive properties. This research aims to develop bend and stretch forming as a cost-effective alternative to net machining and EDM for manufacturing thin parts made of TM. Experimentally, bending about a single axis using a wiping die was studied by observing cracking and measuring springback. It was found that die radius and clearance strongly affect the springback properties of TM, while punch speed, embossings, die radius and clearance all influence cracking. Depending on the various combinations of die radius and clearance, springback factor ranged from .70-.91. To examine the affect of the foam microstructure, bending also was examined numerically using a horizontal hexagonal mesh. As the hexagonal cells were elongated along the sheet length, elastic springback decreased. This can be explained by the earlier onset of plastic hinging occurring at the vertices of the cells. While the numerical results matched the experimental results for the case of zero clearance, differences at higher clearances arose due to an imprecise characterization of the post-yield properties of tantalum. By changing the material properties of the struts, the models can be modified for use with other open-cell metallic foams

Carbon-supported ternary PtSnIr catalysts for direct ethanol fuel cell

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, J.; Kokoh, K.B.; Coutanceau, C.; Leger, J.-M. [Equipe Electrocatalyse, UMR 6503 CNRS, Universite de Poitiers, 40 avenue du Recteur Pineau 86022 Poitiers Cedex (France); Dos Anjos, D.M. [Equipe Electrocatalyse, UMR 6503 CNRS, Universite de Poitiers, 40 avenue du Recteur Pineau 86022 Poitiers Cedex (France); Instituto de Quimica de Sao Carlos, Universidade de Sao Paulo, Caixa Postal 780, 13560-970 Sao Carlos, SP (Brazil); Olivi, P.; De Andrade, A.R. [Departamento de Quimica da Faculdade de Filosofia, Ciencias e Letras de Ribeirao Preto, Universidade de Sao Paulo, Av. Bandeirantes, 3900, 14040-901 Ribeirao Preto, SP (Brazil); Tremiliosi-Filho, G. [Instituto de Quimica de Sao Carlos, Universidade de Sao Paulo, Caixa Postal 780, 13560-970 Sao Carlos, SP (Brazil)

2007-08-01

Binary PtIr, PtSn and ternary PtSnIr electrocatalysts were prepared by the Pechini-Adams modified method on carbon Vulcan XC-72, and these materials were characterized by TEM and XRD. The XRD results showed that the electrocatalysts consisted of the Pt displaced phase, suggesting the formation of solid solutions between the metals Pt/Ir and Pt/Sn. However, the increase in Sn loading promoted phase separation, with the formation of peaks typical of cubic Pt{sub 3}Sn. The electrochemical investigation of these different electrode materials was carried out as a function of the electrocatalyst composition, in a 0.5 mol dm{sup -3} H{sub 2}SO{sub 4} solution, with either the presence or the absence of ethanol. Cyclic voltammetric measurements and chronoamperometric results obtained at room temperature showed that PtSn/C and PtSnIr/C displayed better electrocatalytic activity for ethanol electrooxidation compared to PtIr/C and Pt/C, mainly at low potentials. The oxidation process was also investigated by in situ infrared reflectance spectroscopy, to identify the adsorbed species. Linearly adsorbed CO and CO{sub 2} were found, indicating that the cleavage of the C-C bond in the ethanol substrate occurred during the oxidation process. At 90 C, the Pt{sub 89}Sn{sub 11}/C and Pt{sub 68}Sn{sub 9}Ir{sub 23}/C electrocatalysts displayed higher current and power performances as anode materials in a direct ethanol fuel cell (DEFC). (author)

Construction of Hierarchical CNT/rGO-Supported MnMoO4 Nanosheets on Ni Foam for High-Performance Aqueous Hybrid Supercapacitors.

Science.gov (United States)

Mu, Xuemei; Du, Jingwei; Zhang, Yaxiong; Liang, Zhilin; Wang, Huan; Huang, Baoyu; Zhou, Jinyuan; Pan, Xiaojun; Zhang, Zhenxing; Xie, Erqing

2017-10-18

Rationally designed conductive hierarchical nanostructures are highly desirable for supporting pseudocapacitive materials to achieve high-performance electrodes for supercapacitors. Herein, manganese molybdate nanosheets were hydrothermally grown with graphene oxide (GO) on three-dimensional nickel foam-supported carbon nanotube structures. Under the optimal graphene oxide concentration, the obtained carbon nanotubes/reduced graphene oxide/MnMoO 4 composites (CNT/rGO/MnMoO 4 ) as binder-free supercapacitor cathodes perform with a high specific capacitance of 2374.9 F g -1 at the scan rate of 2 mV s -1 and good long-term stability (97.1% of the initial specific capacitance can be maintained after 3000 charge/discharge cycles). The asymmetric device with CNT/rGO/MnMoO 4 as the cathode electrode and the carbon nanotubes/activated carbon on nickel foam (CNT-AC) as the anode electrode can deliver an energy density of 59.4 Wh kg -1 at the power density of 1367.9 W kg -1 . These superior performances can be attributed to the synergistic effects from each component of the composite electrodes: highly pseudocapacitive MnMoO 4 nanosheets and three-dimensional conductive Ni foam/CNTs/rGO networks. These results suggest that the fabricated asymmetric supercapacitor can be a promising candidate for energy storage devices.

Inkjet?Printed Cu2ZnSn(S, Se)4 Solar Cells

OpenAIRE

Lin, Xianzhong; Kavalakkatt, Jaison; Lux?Steiner, Martha Ch.; Ennaoui, Ahmed

2015-01-01

Cu2ZnSn(S, Se)4?based solar cells with total area (0.5 cm2) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu?Zn?Sn?S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.

Inkjet-Printed Cu2ZnSn(S, Se)4 Solar Cells.

Science.gov (United States)

Lin, Xianzhong; Kavalakkatt, Jaison; Lux-Steiner, Martha Ch; Ennaoui, Ahmed

2015-06-01

Cu 2 ZnSn(S, Se) 4 -based solar cells with total area (0.5 cm 2 ) power conversion efficiency of 6.4% are demonstrated from thin film absorbers processed by inkjet printing technology of Cu-Zn-Sn-S precursor ink followed by selenization. The device performance is limited by the low fill factor, which is due to the high series resistance.

Flexible Foam Model.

Energy Technology Data Exchange (ETDEWEB)

Neilsen, Michael K.; Lu, Wei-Yang; Werner, Brian T.; Scherzinger, William M.; Lo, Chi S.

2018-03-01

Experiments were performed to characterize the mechanical response of a 15 pcf flexible polyurethane foam to large deformation at different strain rates and temperatures. Results from these experiments indicated that at room temperature, flexible polyurethane foams exhibit significant nonlinear elastic deformation and nearly return to their original undeformed shape when unloaded. However, when these foams are cooled to temperatures below their glass transition temperature of approximately -35 o C, they behave like rigid polyurethane foams and exhibit significant permanent deformation when compressed. Thus, a new model which captures this dramatic change in behavior with temperature was developed and implemented into SIERRA with the name Flex_Foam to describe the mechanical response of both flexible and rigid foams to large deformation at a variety of temperatures and strain rates. This report includes a description of recent experiments. Next, development of the Flex Foam model for flexible polyurethane and other flexible foams is described. Selection of material parameters are discussed and finite element simulations with the new Flex Foam model are compared with experimental results to show behavior that can be captured with this new model.

Nanostructued core–shell Sn nanowires @ CNTs with controllable thickness of CNT shells for lithium ion battery

Energy Technology Data Exchange (ETDEWEB)

Zhong, Yu; Li, Xifei; Zhang, Yong; Li, Ruying [Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario N6A 5B9 (Canada); Cai, Mei [General Motors Research and Development Center, Warren, MI 48090-9055 (United States); Sun, Xueliang, E-mail: xsun@eng.uwo.ca [Department of Mechanical and Materials Engineering, University of Western Ontario, London, Ontario N6A 5B9 (Canada)

2015-03-30

Graphical abstract: - Highlights: • Sn nanowires encapsulated in CNTs directly grew on current collectors. • The thickness of CNTs were controlled via growth time, gas flow rate and synthesis temperature. • Thick CNTs contributed to a better capacity retention while thin CNTs led to a higher capacity. • The core–shell structures formed in one-step CVD process. - Abstract: Core–shell structure of Sn nanowires encapsulated in amorphous carbon nanotubes (Sn@CNTs) with controlled thickness of CNT shells was in situ prepared via chemical vapor deposition (CVD) method. The thickness of CNT shells was accurately controlled from 4 to 99 nm by using different growth time, flow rate of hydrocarbon gas (C{sub 2}H{sub 4}) and synthesis temperature. The microstructure and composition of the coaxial Sn@CNTs were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and high resolution transmission electron microscopy (HRTEM) techniques. Moreover, the Sn@CNTs were studied as anode materials for Li-ion batteries and showed excellent cycle performance. The capacity was affected by the thickness of outer CNT shells: thick CNT shells contributed to a better retention while thin CNT shells led to a higher capacity. The thin CNT shell of 6 nm presented the highest capacity around 630 mAh g{sup −1}.

Nanostructued core–shell Sn nanowires @ CNTs with controllable thickness of CNT shells for lithium ion battery

International Nuclear Information System (INIS)

Zhong, Yu; Li, Xifei; Zhang, Yong; Li, Ruying; Cai, Mei; Sun, Xueliang

2015-01-01

Graphical abstract: - Highlights: • Sn nanowires encapsulated in CNTs directly grew on current collectors. • The thickness of CNTs were controlled via growth time, gas flow rate and synthesis temperature. • Thick CNTs contributed to a better capacity retention while thin CNTs led to a higher capacity. • The core–shell structures formed in one-step CVD process. - Abstract: Core–shell structure of Sn nanowires encapsulated in amorphous carbon nanotubes (Sn@CNTs) with controlled thickness of CNT shells was in situ prepared via chemical vapor deposition (CVD) method. The thickness of CNT shells was accurately controlled from 4 to 99 nm by using different growth time, flow rate of hydrocarbon gas (C 2 H 4 ) and synthesis temperature. The microstructure and composition of the coaxial Sn@CNTs were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and high resolution transmission electron microscopy (HRTEM) techniques. Moreover, the Sn@CNTs were studied as anode materials for Li-ion batteries and showed excellent cycle performance. The capacity was affected by the thickness of outer CNT shells: thick CNT shells contributed to a better retention while thin CNT shells led to a higher capacity. The thin CNT shell of 6 nm presented the highest capacity around 630 mAh g −1

The study of hydrogen electrosorption in layered nickel foam/palladium/carbon nanofibers composite electrodes

International Nuclear Information System (INIS)

Skowronski, J.M.; Czerwinski, A.; Rozmanowski, T.; Rogulski, Z.; Krawczyk, P.

2007-01-01

In the present work, the process of hydrogen electrosorption occurring in alkaline KOH solution on the nickel foam/palladium/carbon nanofibers (Ni/Pd/CNF) composite electrodes is examined. The layered Ni/Pd/CNF electrodes were prepared by a two-step method consisting of chemical deposition of a thin layer of palladium on the nickel foam support to form Ni/Pd electrode followed by coating the palladium layer with carbon nanofibers layer by means of the CVD method. The scanning electron microscope was used for studying the morphology of both the palladium and carbon layer. The process of hydrogen sorption/desorption into/from Ni/Pd as well as Ni/Pd/CNF electrode was examined using the cyclic voltammetry method. The amount of hydrogen stored in both types of composite electrodes was shown to increase on lowering the potential of hydrogen sorption. The mechanism of the anodic desorption of hydrogen changes depending on whether or not CNF layer is present on the Pd surface. The anodic peak corresponding to the removal of hydrogen from palladium is lower for Ni/Pd/CNF electrode as compared to that measured for Ni/Pd one due to a partial screening of the Pd surface area by CNF layer. The important feature of Ni/Pd/CNF electrode is anodic peak appearing on voltammetric curves at potential ca. 0.4 V more positive than the peak corresponding to hydrogen desorption from palladium. The obtained results showed that upon storing the hydrogen saturated Ni/Pd/CNF electrode at open circuit potential, diffusion of hydrogen from carbon to palladium phase occurs due to interaction between carbon fibers and Pd sites on the nickel foam support

Hydrogen peroxide modified Mg-Al-O oxides supported Pt-Sn catalysts for paraffin dehydrogenation

NARCIS (Netherlands)

Lai, Y.; He, Songbo; Luo, S.; Bi, W.; Li, XianRu; Sun, Chenglin; Seshan, Kulathuiyer

2015-01-01

In this work, a new method to prepare Mg–Al–O oxide by co-precipitation method with addition of H2O2 was developed. The application of Mg–Al–O as a support of Pt–Sn catalysts for paraffin dehydrogenation was investigated. Characterization results indicated that modification of H2O2 (i) enlarged the

PUR-PIR foam produced based on poly(hydroxybutyl citrate foamed founded with different factories

Directory of Open Access Journals (Sweden)

Liszkowska Joanna

2018-03-01

Full Text Available A poly(hydroxybutyl citrate p(HBC was obtained. The product compound produced in the solution during esterification, was added to rigid polyurethane-polyisocyanurate foams (PUR-PIR. The amount of petrochemical polyol in the foams was decreased in favor of the p(HBC from 0.1 to 0.5 equivalent. The foams were foamed in two ways: with distilled water (W foams and with Solkane 365/227 (S foams. The examination results of both foam series were compared. They showed that the foams foamed with water have higher softening temperature than the foams foamed with solkane. The retention values for both foam series are around 91–95%, and water absorption in the range of 0.7–3.2%. The anisotropy coefficient did not exceed 1.08 (the lowest value being 1.01.

Effect of UV irradiation on Cu2ZnSnS4 thin films prepared by the sol–gel sulfurization method

International Nuclear Information System (INIS)

Miyazawa, Hayato; Tanaka, Kunihiko; Uchiki, Hisao

2015-01-01

Cu 2 ZnSnS 4 (CZTS) thin films were fabricated on Mo-coated soda lime glass substrates by the sol–gel sulfurization method, which is a non-vacuum process. UV irradiation was introduced to the drying process, resulting in a significant increase in the grain size and density as well as a remarkable improvement in the crystallinity of the CZTS films. In addition, sulfurization of the Mo substrate was suppressed due to the increased density. We confirmed that the carbon/metal ratio in the precursor increased as a result of the UV irradiation. - Graphical abstract: Surface and cross sectional SEM images of the (a) CZTS prepared without UV irradiation and (b) CZTS prepared with UV irradiation. - Highlights: • CZTS thin film was prepared by sol–gel sulfurization method. • UV irradiation was introduced during the drying process. • Density and crystallinity of the CZTS films were improved by the UV irradiation. • Sulfurization of Mo substrates was suppressed by the UV irradiation.

Aqueous chemical growth of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films: Air annealing and photoelectrochemical properties

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.M.; Deshmukh, P.R.; Patil, S.V. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

2013-05-15

Highlights: ► Facile and efficient route for synthesis of CZTS film. ► Effect of annealing on structural, morphological and electrical properties of CZTS films. ► Solar cell study. - Abstract: In present investigation, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been deposited on to glass substrates by novel chemical successive ionic layer adsorption and reaction (SILAR) method. The effect of air annealing in the temperature range between 573 and 773 K on the structural, morphological, optical and electrical properties has been studied. The X-ray diffraction studies revealed the formation of polycrystalline CZTS films. The surface morphological study showed smooth, compact and uniform film formation after annealing formation. The band gap was in between range from 1.5 to 1.8 eV depending on annealing temperature. The thermo emf measurement revealed that the CZTS exhibits p-type electrical conductivity. Further, photoactivity of CZTS thin films was tested by forming the photoelectrochemical cell.

RGO/Au NPs/N-doped CNTs supported on nickel foam as an anode for enzymatic biofuel cells.

Science.gov (United States)

Zhang, He; Zhang, Lingling; Han, Yujie; Yu, You; Xu, Miao; Zhang, Xueping; Huang, Liang; Dong, Shaojun

2017-11-15

In this study, three-dimensional reduced graphene oxide/Au NPs/nitrogen-doped carbon nanotubes (RGO/Au NPs/N-doped CNTs) assembly supported on nickel foam was utilized as an anode for enzymatic biofuel cells (EBFCs). 3D RGO/Au NPs was obtained by electrodepositing reduced graphene oxide on nickel foam (Ni foam), while Au NPs were co-deposited during the process. Afterwards, nitrogen doped CNTs (N-CNTs) were allowed to grow seamlessly on the surfaces of 3D RGO/Au NPs via a simple chemical vapor deposition (CVD) process. In this nanostructure, Au NPs co-deposition and nitrogen doping offer more active sites for bioelectrocatalysis. Additionally, N-CNTs were demonstrated providing high specific surface area for enzyme immobilization and facilitating the electron transfer between glucose oxidase (GOx) and electrode. The resulting bioanode achieved efficient glucose oxidation with high current densities of 7.02mAcm -2 (0.3V vs. Ag/AgCl). Coupling with a Pt cathode, the fabricated glucose/air biofuel cell exhibited an open-circuit potential of 0.32V and generated a maximum power density 235µWcm -2 at 0.15V. This novel electrode substrate achieved high performance in current density at bioelectrochemical systems and could be useful for further exploiting the application of three dimensional carbon-based nanomaterials in EBFCs. Copyright © 2017 Elsevier B.V. All rights reserved.

An Investigation of Nanocrystalline and Electrochemically Grown Cu2ZnSnS4 Thin Film Using Redox Couples of Different Band Offset

Directory of Open Access Journals (Sweden)

Prashant K. Sarswat

2013-01-01

Full Text Available Alternative electrolytes were examined to evaluate photoelectrochemical response of Cu2ZnSnS4 films at different biasing potential. Selections of the electrolytes were made on the basis of relative Fermi level position and standard reduction potential. Our search was focused on some cost-effective electrolytes, which can produce good photocurrent during illumination. Thin films were grown on FTO substrate using ink of nanocrystalline Cu2ZnSnS4 particles as well as electrodeposition-elevated temperature sulfurization approach. Our investigations suggest that photoelectrochemical response is mostly due to conduction band-mediated process. Surface topography and phase purity were investigated after each electrochemical test, in order to evaluate film quality and reactivity of electrolytes. Raman examination of film and nanocrystals was conducted for comparison. The difference in photocurrent response was explained due to various parameters such as change in charge transfer rate constant, presence of dangling bond, difference in concentration of adsorbed species in electrode.

Infiltrated carbon foam composites

Science.gov (United States)

Lucas, Rick D. (Inventor); Danford, Harry E. (Inventor); Plucinski, Janusz W. (Inventor); Merriman, Douglas J. (Inventor); Blacker, Jesse M. (Inventor)

2012-01-01

An infiltrated carbon foam composite and method for making the composite is described. The infiltrated carbon foam composite may include a carbonized carbon aerogel in cells of a carbon foam body and a resin is infiltrated into the carbon foam body filling the cells of the carbon foam body and spaces around the carbonized carbon aerogel. The infiltrated carbon foam composites may be useful for mid-density ablative thermal protection systems.

Modification of optical and electrical properties of chemical bath deposited SnS using O{sub 2} plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Gómez, A. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Martínez, H., E-mail: hm@fis.unam.mx [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico); Calixto-Rodríguez, M. [Centro de Investigación en Energía, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Avellaneda, D. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, México (Mexico); Reyes, P.G. [Facultad de Ciencias, Universidad Autónoma del Estado de México, Estado de México, México (Mexico); Flores, O. [Instituto de Ciencias Fisicas, Universidad Nacional Autónoma de México, Apartado Postal 48-3, 62251, Cuernavaca, Morelos (Mexico)

2013-06-15

In this paper, we report modifications of structural and optical, electrical properties that occur in tin sulphide (SnS) treated in O{sub 2} plasma. The SnS thin films were deposited by chemical bath deposition technique. The samples were treated in an O{sub 2} plasma discharge at 3 Torr of pressure discharge, a discharge voltage of 2.5 kV and 20 mA of discharge current. The prepared and treated thin films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The photoconductivity and electrical effects of SnS have been studied. The SnS thin films had an orthorhombic crystalline structure. With the plasma treatment the optical gap and electrical properties of the SnS films changed from 1.61 to 1.84 eV, for 3.9 × 10{sup 5} to 10.42 Ω cm, respectively. These changes can be attributed to an increase in electron density, percolation effects due to porosity, surface degradation/etching that is an increase in surface roughness, where some structural changes related to crystallinity occurs like a high grain size as revealed by SEM images.

Effects of diethanolamine on sol–gel–processed Cu{sub 2}ZnSnS{sub 4} photovoltaic absorber thin films

Energy Technology Data Exchange (ETDEWEB)

Kahraman, S., E-mail: suleymanmku@gmail.com; Çetinkaya, S.; Çetinkara, H.A.; Güder, H.S.

2014-02-01

Highlights: • DEA content significantly affected the crystal structure and the phase purity. • The films’ crystallite sizes increased with increasing DEA content. • Two different impurity levels were found for each film via R-T characteristics. • Under different illuminations, the n-Si/CZTS exhibited good photo-response. • The light on/off current ratios confirmed the photo-sensitivity of the junction. - Abstract: As a promising solar absorber, the Cu{sub 2}ZnSnS{sub 4} compound has been popular recently for the production of green and economical thin-film solar cells owing to the abundancy and non-toxicity of all the constituents. In this study, we have produced Cu{sub 2}ZnSnS{sub 4} films via the sol–gel technique. As a stabilizer, the effects of the diethanolamine on the properties of the films were investigated. The amount of diethanolamine significantly affected the crystal structure, crystallite sizes and phase purity of the films. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. It was found that the film produced by using 2 ml of diethanolamine in sol exhibited pure CZTS phase, compact and dense morphology and enhanced photo-sensitivity. Light on/off current ratio of the n-Si/Cu{sub 2}ZnSnS{sub 4} junction was found to be 47 under 100 mW/cm{sup 2} of illumination. Electrical activation energies of the films were investigated and the variations were attributed to delocalized phonon states generating from the presence of other phases and lattice defects.

Mass transport in thin supported silica membranes

NARCIS (Netherlands)

Benes, Nieck Edwin

2000-01-01

In this thesis multi-component mass transport in thin supported amorphous silica membranes is discussed. These membranes are micro-porous, with pore diameters smaller than 4Å and show high fluxes for small molecules (such as hydrogen) combined with high selectivities for these molecules with respect

Effect of Sn on the optical band gap determined using absorption spectrum fitting method

Energy Technology Data Exchange (ETDEWEB)

Heera, Pawan, E-mail: sramanb70@mailcity.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Govt. College Amb, Himachal Pradesh, INDIA,177203 (India); Kumar, Anup, E-mail: kumar.anup.sml@gmail.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Physics Department, Govt. College, Kullu, H. P., INDIA, 175101 (India); Sharma, Raman, E-mail: pawanheera@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India)

2015-05-15

We report the preparation and the optical studies on tellurium rich glasses thin films. The thin films of Se{sub 30}Te{sub 70-x} Sn{sub x} system for x= 0, 1.5, 2.5 and 4.5 glassy alloys prepared by melt quenching technique are deposited on the glass substrate using vacuum thermal evaporation technique. The analysis of absorption spectra in the spectral range 400nm–4000 nm at room temperature obtained from UV-VIS-NIR spectrophotometer [Perkin Elmer Lamda-750] helps us in the optical characterization of the thin films under study. The absorption spectrum fitting method is applied by using the Tauc’s model for estimating the optical band gap and the width of the band tail of the thin films. The optical band gap is calculated and is found to decrease with the Sn content.

Dielectric and Radiative Properties of Sea Foam at Microwave Frequencies: Conceptual Understanding of Foam Emissivity

OpenAIRE

Peter W. Gaiser; Magdalena D. Anguelova

2012-01-01

Foam fraction can be retrieved from space-based microwave radiometric data at frequencies from 1 to 37 GHz. The retrievals require modeling of ocean surface emissivity fully covered with sea foam. To model foam emissivity well, knowledge of foam properties, both mechanical and dielectric, is necessary because these control the radiative processes in foam. We present a physical description of foam dielectric properties obtained from the foam dielectric constant including foam skin depth; foam ...

Preparation and characterization of tin sulphide thin films by a spray pyrolysis technique

International Nuclear Information System (INIS)

Ben Haj Salah, H.; Bouzouita, H.; Rezig, B.

2005-01-01

We have attempted the preparation and characterization of Sn 2 S 3 thin films by using the spray pyrolysis technique. We started with acidic aqueous solutions including tin (II) chloride and thiourea, which were atomized with compressed air as carrier gas. The Sn 2 S 3 thin films were obtained on glass substrates. Thin layers of Sn-S have been grown at various temperatures in the range of 275-325 deg. C and various [S/Sn] ratios. The structural properties have been determined by using X-ray diffraction (XRD). The changes observed in the structural phases during the film formation in dependence of growth temperatures are reported and discussed. The optical constants of the deposited films were obtained using the experimentally recorded transmission and reflectance spectral data as functions of the wavelength, in the range of 300-1800 nm. An analysis of the deduced spectral absorption of the deposited films revealed an optical indirect band gap energy of 1.9-2.2 eV for Sn 2 S 3 layers

Operator spin foam models

International Nuclear Information System (INIS)

Bahr, Benjamin; Hellmann, Frank; Kaminski, Wojciech; Kisielowski, Marcin; Lewandowski, Jerzy

2011-01-01

The goal of this paper is to introduce a systematic approach to spin foams. We define operator spin foams, that is foams labelled by group representations and operators, as our main tool. A set of moves we define in the set of the operator spin foams (among other operations) allows us to split the faces and the edges of the foams. We assign to each operator spin foam a contracted operator, by using the contractions at the vertices and suitably adjusted face amplitudes. The emergence of the face amplitudes is the consequence of assuming the invariance of the contracted operator with respect to the moves. Next, we define spin foam models and consider the class of models assumed to be symmetric with respect to the moves we have introduced, and assuming their partition functions (state sums) are defined by the contracted operators. Briefly speaking, those operator spin foam models are invariant with respect to the cellular decomposition, and are sensitive only to the topology and colouring of the foam. Imposing an extra symmetry leads to a family we call natural operator spin foam models. This symmetry, combined with assumed invariance with respect to the edge splitting move, determines a complete characterization of a general natural model. It can be obtained by applying arbitrary (quantum) constraints on an arbitrary BF spin foam model. In particular, imposing suitable constraints on a spin(4) BF spin foam model is exactly the way we tend to view 4D quantum gravity, starting with the BC model and continuing with the Engle-Pereira-Rovelli-Livine (EPRL) or Freidel-Krasnov (FK) models. That makes our framework directly applicable to those models. Specifically, our operator spin foam framework can be translated into the language of spin foams and partition functions. Among our natural spin foam models there are the BF spin foam model, the BC model, and a model corresponding to the EPRL intertwiners. Our operator spin foam framework can also be used for more general spin

Bubble and foam chemistry

CERN Document Server

Pugh, Robert J

2016-01-01

This indispensable guide will equip the reader with a thorough understanding of the field of foaming chemistry. Assuming only basic theoretical background knowledge, the book provides a straightforward introduction to the principles and properties of foams and foaming surfactants. It discusses the key ideas that underpin why foaming occurs, how it can be avoided and how different degrees of antifoaming can be achieved, and covers the latest test methods, including laboratory and industrial developed techniques. Detailing a variety of different kinds of foams, from wet detergents and food foams, to polymeric, material and metal foams, it connects theory to real-world applications and recent developments in foam research. Combining academic and industrial viewpoints, this book is the definitive stand-alone resource for researchers, students and industrialists working on foam technology, colloidal systems in the field of chemical engineering, fluid mechanics, physical chemistry, and applied physics.

Construction of SnO2-Graphene Composite with Half-Supported Cluster Structure as Anode toward Superior Lithium Storage Properties.

Science.gov (United States)

Zhu, Chengling; Chen, Zhixin; Zhu, Shenmin; Li, Yao; Pan, Hui; Meng, Xin; Imtiaz, Muhammad; Zhang, Di

2017-06-12

Inspired by nature, herein we designed a novel construction of SnO 2 anodes with an extremely high lithium storage performance. By utilizing small sheets of graphene oxide, the partitioned-pomegranate-like structure was constructed (SnO 2 @C@half-rGO), in which the porous clusters of SnO 2 nanoparticles are partially supported by reduced graphene oxide sheets while the rest part is exposed (half-supported), like partitioned pomegranates. When served as anode for lithium-ion batteries, SnO 2 @C@half-rGO exhibited considerably high specific capacity (1034.5 mAh g -1 after 200 cycles at 100 mA g -1 ), superior rate performance and remarkable durability (370.3 mAh g -1 after 10000 cycles at 5 A g -1 ). When coupled with graphitized porous carbon cathode for lithium-ion hybrid capacitors, the fabricated devices delivered a high energy density of 257 Wh kg -1 at ∼200 W kg -1 and maintained 79 Wh kg -1 at a super-high power density of ∼20 kW kg -1 within a wide voltage window up to 4 V. This facile and scalable approach demonstrates a new architecture for graphene-based composite for practical use in energy storage with high performance.

Graphene foam as a biocompatible scaffold for culturing human neurons

Science.gov (United States)

Mattei, Cristiana; Nasr, Babak; Hudson, Emma J.; Alshawaf, Abdullah J.; Chana, Gursharan; Everall, Ian P.; Dottori, Mirella; Skafidas, Efstratios

2018-01-01

In this study, we explore the use of electrically active graphene foam as a scaffold for the culture of human-derived neurons. Human embryonic stem cell (hESC)-derived cortical neurons fated as either glutamatergic or GABAergic neuronal phenotypes were cultured on graphene foam. We show that graphene foam is biocompatible for the culture of human neurons, capable of supporting cell viability and differentiation of hESC-derived cortical neurons. Based on the findings, we propose that graphene foam represents a suitable scaffold for engineering neuronal tissue and warrants further investigation as a model for understanding neuronal maturation, function and circuit formation. PMID:29657752

Three-dimensional mesoporous graphene aerogel-supported SnO2 nanocrystals for high-performance NO2 gas sensing at low temperature.

Science.gov (United States)

Li, Lei; He, Shuijian; Liu, Minmin; Zhang, Chunmei; Chen, Wei

2015-02-03

A facile and cost-efficient hydrothermal and lyophilization two-step strategy has been developed to prepare three-dimensional (3D) SnO2/rGO composites as NO2 gas sensor. In the present study, two different metal salt precursors (Sn(2+) and Sn(4+)) were used to prepare the 3D porous composites. It was found that the products prepared from different tin salts exhibited different sensing performance for NO2 detection. The scanning electron microscopy and transmission electron microscopy characterizations clearly show the macroporous 3D hybrids, nanoporous structure of reduce graphene oxide (rGO), and the supported SnO2 nanocrystals with an average size of 2-7 nm. The specific surface area and porosity properties of the 3D mesoporous composites were analyzed by Braunauer-Emmett-Teller method. The results showed that the SnO2/rGO composite synthesized from Sn(4+) precursor (SnO2/rGO-4) has large surface area (441.9 m(2)/g), which is beneficial for its application as a gas sensing material. The gas sensing platform fabricated from the SnO2/rGO-4 composite exhibited a good linearity for NO2 detection, and the limit of detection was calculated to be as low as about 2 ppm at low temperature. The present work demonstrates that the 3D mesoporous SnO2/rGO composites with extremely large surface area and stable nanostructure are excellent candidate materials for gas sensing.

Effects of sulfurization on the optical properties of Cu2ZnxFe1-xSnS4 thin films

Science.gov (United States)

Hannachi, A.; Oueslati, H.; Khemiri, N.; Kanzari, M.

2017-10-01

In order to prepare thin films of novel semiconductor materials that contain only earth abundant, low cost and nontoxic elements, Cu2ZnxFe1-xSnS4 ingots were successfully synthesized by direct fusion method. Crushed powders of these ingots were used as raw materials for the thermal evaporation. Cu2ZnxFe1-xSnS4 (with x = 0, 0.25, 0.5, 0.75 and 1) thin films were deposited on non-heated glass substrates by vacuum evaporation method. The as deposited films were sulfurized for 30 min at sulfurization temperature Ts = 400 °C. The effects of the sulfurization on the structural and optical properties of CZFTS films were realized by X-ray diffraction (XRD) and UV-Vis spectroscopy. XRD patterns show that all sulfurized CZFTS films were polycrystalline in nature with a preferential orientation along the (112) plane. CFTS films exhibit a stannite structure while CZTS films had a kesterite structure. Optical measurements showed that CZFTS films sulfurized at 400 °C exhibited an optical transmittance between 60 and 80% and all materials had relatively high absorption coefficients in the range of 104-105 cm-1. The band gap energies of sulfurized CZFTS films decreased from 1.71 to 1.50 eV with the increase of the Zn content. The dispersion of the refractive index was discussed in terms of the single oscillator model proposed by Wemple and DiDomenico and the optical parameters such as refractive index, extinction coefficient, oscillator energy and dispersion energy were calculated. The electrical free carrier susceptibility and the carrier concentration on the effective mass ratio were evaluated according to the model of Spitzer and Fan. The hot probe analysis showed that all sulfurized CZFTS films are p-type conductivity.

Performance PtSnRh electrocatalysts supported on carbon-Sb2O5.SbO2 for the electro-oxidation of ethanol, prepared by an alcohol-reduction process

International Nuclear Information System (INIS)

Castro, Jose Carlos

2013-01-01

PtSnRh electrocatalysts supported on carbon-Sb 2 O 5 .SnO 2 , with metal loading of 20 wt%, were prepared by an alcohol-reduction process, using H 2 PtCl 6 .6H 2 O (Aldrich), RhCl 3 .xH 2 O (Aldrich) and SnCl 2 .2H 2 O (Aldrich), as source of metals; Sb 2 O 5 .SnO 2 (ATO) and carbon Vulcan XC72, as support; and ethylene glycol as reducing agent. The electrocatalysts obtained were characterized physically by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The diffractograms showed which PtSnRh/C-ATO electrocatalysts had FCC structure of Pt and Pt alloys, besides several peaks associated with SnO 2 and ATO. The average sizes of crystallites were between 2 and 4 nm. TEM micrographs showed a good distribution of the nanoparticles on the support. The average sizes of particles were between 2 and 3 nm, with good agreement for the average size of the crystallites. The performances of the electrocatalysts were analyzed by electrochemical techniques and in real conditions of operation using single direct ethanol fuel cell. In the chronoamperometry at 50 deg C, the electrocatalysts with carbon (85 wt%) and ATO (15 wt%) support, showed the best activity, and the atomic proportions which achieved the best results were PtSnRh(70:25:05) e (90:05:05). PtSnRh(70:25:05)/85C+15ATO electrocatalysts showed the best performance in a direct ethanol fuel cell. (author)

Foam engineering fundamentals and applications

CERN Document Server

2012-01-01

Containing contributions from leading academic and industrial researchers, this book provides a much needed update of foam science research. The first section of the book presents an accessible summary of the theory and fundamentals of foams. This includes chapters on morphology, drainage, Ostwald ripening, coalescence, rheology, and pneumatic foams. The second section demonstrates how this theory is used in a wide range of industrial applications, including foam fractionation, froth flotation and foam mitigation. It includes chapters on suprafroths, flotation of oil sands, foams in enhancing petroleum recovery, Gas-liquid Mass Transfer in foam, foams in glass manufacturing, fire-fighting foam technology and consumer product foams.

Foams theory, measurements, and applications

CERN Document Server

Khan, Saad A

1996-01-01