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Sample records for float-zone silicon diodes

  1. Radiation damage effects in standard float zone silicon diodes

    Energy Technology Data Exchange (ETDEWEB)

    Pascoalino, Kelly C.; Camargo, Fabio; Barbosa, Renata F.; Goncalves, Josemary A.C.; Tobias, Carmen C.B., E-mail: ccbueno@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2009-07-01

    The aim of this work was to study the radiation damage effects on the electrical properties of standard float zone diodes (STFZ). Such effects were evaluated by measuring the current and capacitance of these devices as a function of the reverse voltage. For comparison, current and capacitance measurements were carried out with a non-irradiated STFZ device. The irradiation was performed in the Radiation Technology Center (CTR) at IPEN/CNEN-SP using a {sup 60}Co irradiator (Gammacell 220 - Nordion) with a dose rate of about 2.2 kGy/h. Samples were irradiated at room temperature in steps variable from 50 kGy up 140 kGy which lead to an accumulated dose of 460 kGy. The results obtained have shown that the upper dose limit for a 'damageless' STFZ diode is about 50 kGy. (author)

  2. Studies of the sensitivity dependence of float zone silicon diodes on gamma absorbed dose

    Energy Technology Data Exchange (ETDEWEB)

    Pascoalino, K.C.S.; Santos, T.C. dos; Barbosa, R.F.; Camargo, F. de; Goncalves, J.A.C.; Bueno, C.C. [Instituto de Pesquisas Energeticas e Nucleares (CTR/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes

    2011-07-01

    Full text: Several advantages of silicon diodes which include small size, low cost, high sensitivity and wide availability, make them suitable for dosimetry and for radiation field mapping. However, the small radiation tolerance of ordinary silicon devices has imposed constraints on their application in intense radiation fields such as found in industrial radiation processes. This scenario has been changed with the development of radiation hard silicon devices to be used as track detectors in high-energy physics experiments. Particularly, in this work it is presented the dosimetric results obtained with a batch of nine junction silicon diodes developed, in the framework of CERN RD50 Collaboration, as good candidates for improved radiation hardness. These diodes were produced with 300 micrometer n-type silicon substrate grown by standard float zone technique and processed by the Microelectronics Center of Helsinki University of Technology. The samples irradiation was performed using a Co-60 irradiator (Gammacell 220) which delivers a dose-rate of 2 kGy/h. During the irradiation, the unbiased diodes were connected through low-noise coaxial cables to the input of a KEITHLEY 617 electrometer, in order to monitor the devices photocurrent as a function of the exposure time. To study the response uniformity of the batch of nine diodes as well the sensitivity dependence on the absorbed dose, they were irradiated with different doses from 5 kGy up to 50 kGy. The sensitivity response of each device was investigated through the on-line measurements of the current signals as a function of the exposure time. For doses up to 5 kGy, all diodes exhibited a current decay of almost six percent in comparison with the value registered at the start-time of the irradiation. However, this decrease in the current sensitivity is much smaller than those observed with ordinary diodes for the same absorbed dose. The dose-response curves of the devices were also investigated through the plot

  3. Comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCZ) silicon diodes in radiotherapy electron beam dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Santos, T.C. dos; Goncalves, J.A.C.; Vasques, M.M.; Tobias, C.C.B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes; Neves-Junior, W.F.P.; Haddad, C.M.K. [Hospital Sirio Libanes, Sao Paulo, SP (Brazil). Sociedade Beneficente de Senhoras; Harkonen, J. [Helsinki University of Technology (Denmark). Helsinki Inst. of Physics

    2010-07-01

    Full text. The use of semiconductor detectors has increased in radiotherapy practice since 1980s due to mainly their fast processing time, small sensitive volume and high relative sensitivity to ionizing radiation. Other major advantages of Si devices are excellent repeatability, good mechanical stability, high spatial resolution and the energy independence of mass collision stopping powers ratios (between silicon and water for electron beams with energy from 4 up to 20 MeV). However, ordinary silicon devices are very prone to radiation damage effects. In the last years, the development of radiation tolerant silicon detectors for High Energy Physics experiments has overcome this drawback. In this work we present the preliminary results obtained with a rad-hard epitaxial silicon diode as on-line clinical electron beam dosimeter. The diodes with 25 mm{sup 2} active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 6517B electrometer. During all measurements, the diodes were held between PMMA plates, placed at Zref and centered in a radiation field of 10 cm x 10 cm, with the SSD kept at 100 cm. The devices dosimetric response was evaluated for 6, 9, 12, 15, 18 e 21 MeV electron beams from a Siemens KD 2 Radiotherapy Linear Accelerator, located at Sirio-Libanes Hospital. The radiation induced current in the diodes was registered as a function of the exposure time during 60 s for a fixed 300 MU. To study the short term repeatability, current signals were registered for the same radiation dose, for all energies. The dose-response of the diodes was achieved through the integration of the current signals as a function of the exposure time. The results obtained in the energy range of 6 up to 21 MeV evidenced that, for the same average dose rate of 5.0 cGy/s, the current signals are very stable and repeatable in both cases. For all energies, data shows good instantaneous repeatability with a percentage variation coefficient better than 2

  4. Characterization of standard and oxygenated float zone Si diodes under radiotherapy beams

    Energy Technology Data Exchange (ETDEWEB)

    Casati, M. [INFN Firenze and Dipartimento di Fisiopatologia Clinica, University of Florence (Italy)]. E-mail: marta.casati@unifi.it; Bruzzi, M. [INFN Firenze and Dipartimento di Energetica, University of Florence (Italy); Bucciolini, M. [INFN Firenze and Dipartimento di Fisiopatologia Clinica, University of Florence (Italy); Menichelli, D. [INFN Firenze and Dipartimento di Fisiopatologia Clinica, University of Florence (Italy); Scaringella, M. [INFN Firenze and Dipartimento di Energetica, University of Florence (Italy); Piemonte, C. [ITC-IRST, MIS Division, Povo, Trento (Italy); Fretwurst, E. [Institute for Experimental Physics, University of Hamburg D-22761 (Germany)

    2005-10-21

    The dosimetric response of silicon diodes made from high resistivity float zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon has been studied with a {sup 60}Co clinical radiotherapy gamma source. To investigate the changes in sensitivity with the accumulated dose, the diodes have been exposed to doses of {sup 137}Cs gamma-rays up to 6 kGy. As expected, Si diodes showed a degradation in the signal response with the accumulated dose due to the formation of radiation-induced defects acting as lifetime killers. Nonetheless, the DOFZ Si diode appeared to be moderately radiation harder than the standard FZ sample, with a decay of sensitivity less pronounced.

  5. Bread board float zone experiment system for high purity silicon

    Science.gov (United States)

    Kern, E. L.; Gill, G. L., Jr.

    1982-01-01

    A breadboard float zone experimental system has been established at Westech Systems for use by NASA in the float zone experimental area. A used zoner of suitable size and flexibility was acquired and installed with the necessary utilities. Repairs, alignments and modifications were made to provide for dislocation free zoning of silicon. The zoner is capable of studying process parameters used in growing silicon in gravity and is flexible to allow trying of new features that will test concepts of zoning in microgravity. Characterizing the state of the art molten zones of a growing silicon crystal will establish the data base against which improvements of zoning in gravity or growing in microgravity can be compared. 25 mm diameter was chosen as the reference size, since growth in microgravity will be at that diameter or smaller for about the next 6 years. Dislocation free crystals were growtn in the 100 and 111 orientations, using a wide set of growth conditions. The zone shape at one set of conditions was measured, by simultaneously aluminum doping and freezing the zone, lengthwise slabbing and delineating by etching. The whole set of crystals, grown under various conditions, were slabbed, polished and striation etched, revealing the growth interface shape and the periodic and aperiodic natures of the striations.

  6. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  7. 3D modeling of doping from the atmosphere in floating zone silicon crystal growth

    Science.gov (United States)

    Sabanskis, A.; Surovovs, K.; Virbulis, J.

    2017-01-01

    Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.

  8. Mathematical modelling of the feed rod shape in floating zone silicon crystal growth

    Science.gov (United States)

    Plāte, M.; Krauze, A.; Virbulis, J.

    2017-01-01

    A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution of the asymmetric feed rod shape. The feed rod rotation is shown to have a smoothing effect on the shape of the open melting front.

  9. Investigations of defects after indiffusion of iron and nickel into float-zone silicon

    Energy Technology Data Exchange (ETDEWEB)

    Saring, Philipp; Hildebrand, Nils; Falkenberg, Marie Aylin; Seibt, Michael [IV. Physikalisches Institut, Georg-August-Universitaet, Goettingen (Germany)

    2010-07-01

    The electrical properties of silicon are strongly influenced by fast diffusing transition metal impurities such as iron, nickel and copper, which are unintentionally brought into and distributed inside the material during high temperature treatments. Under certain conditions these metals cluster by forming recombination active silicide precipitates. Whereas homogeneous precipitation has been observed for nickel or copper, iron precipitation generally requires the presence of pre-existing nucleation sites. Recent studies deal with the simultaneous coprecipitation of these elements. In this work we focus on the distribution of the electrically active defects after indiffusion of nickel and iron into float-zone silicon. We investigate the recombination properties of these defects by LBIC- and EBIC-measurements as well as their concentration and majority charge carrier kinetics by DLTS experiments. By suitable annealing conditions we established quite small concentrations of precipitates (<10{sup 8} cm{sup -3}) and metal denuded zones below the sample surfaces. Single precipitates were extracted by Focussed-Ion-Beam technique for TEM-investigations.

  10. Characterization of 4H Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone

    Science.gov (United States)

    Woodworth, Andrew, A; Sayir, Ali; Neudeck, Philip, G; Raghothamachar, Balaji; Dudley, Michael

    2012-01-01

    Commercially available bulk silicon carbide (SiC) has a high number (>2000/sq cm) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by x-ray transmission Laue diffraction patterns and x-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.

  11. Effects of growth parameters on silicon molten zone formed by infrared convergent-heating floating zone method

    Science.gov (United States)

    Hossain, Md. Mukter; Watauchi, Satoshi; Nagao, Masanori; Tanaka, Isao

    2017-02-01

    The effects of rotation rate, filament size, mirror shape, and crystal diameter on the shape of the silicon molten zones prepared using the infrared convergent-heating floating zone method were examined. The crystal rotation rate did not significantly affect the shape of the feed-melt or crystal-melt interfaces, gap between the crystal and feed, zone length, or lamp power required to form the molten zone. More efficient heating was achieved using lamps with smaller filaments and ellipsoidal mirrors with higher eccentricity. The convexity of both the feed and the crystal sides of the molten zone decreased with increasing crystal diameter. However, the required lamp power, gap, and zone length increased with increasing crystal diameter. The stability of the molten zone seemed to reduce with increasing crystal diameter. The minimum melt width divided by the crystal diameter was found to be a good parameter to describe the stability of the molten zone.

  12. The Influence of Static and Rotating Magnetic Fields on Heat and Mass Transfer in Silicon Floating Zones

    Science.gov (United States)

    Croll, A.; Dold, P.; Kaiser, Th.; Szofran, F. R.; Benz, K. W.

    1999-01-01

    Heat and mass transfer in float-zone processing are strongly influenced by convective flows in the zone. They are caused by buoyancy convection, thermocapillary (Marangoni) convection, or artificial sources such as rotation and radio-frequency heating. Flows in conducting melts can be controlled by the use of magnetic fields, either by damping fluid motion with static fields or by generating a defined flow with rotating fields. The possibilities of using static and rotating magnetic fields in silicon floating-zone growth have been investigated by experiments in axial static fields up to 5 T and in transverse rotating magnetic fields up to 7.5 mT. Static fields of a few 100 mT already suppress most striations but are detrimental to the radial segregation by introducing a coring effect. A complete suppression of dopant striations caused by time-dependent thermocapillary convection and a reduction of the coring to insignificant values, combined with a shift of the axial segregation profile toward a more diffusion-limited case, is possible with static fields greater than or equal to 1 T. However, under certain conditions the use of high axial magnetic fields can lead to the appearance of a new type of pronounced dopant striations, caused by thermoelectromagnetic convection. The use of a transverse rotating magnetic field influences the microscopic segregation at quite low inductions, of the order of a few millitesla. The field shifts time- dependent flows and the resulting striation patterns from a broad range of low frequencies at high amplitudes to a few high frequencies at low amplitudes.

  13. Properties of iron-doped multicrystalline silicon grown by the float-zone technique

    Energy Technology Data Exchange (ETDEWEB)

    Ciszek, T.F.; Wang, T.H.; Ahrenkiel, R.K.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    Multicrystalline Fe-doped Si ingots were float-zoned from high-purity feed rods. Fe was introduced by pill-doping, which gives uniform impurity content for small segregation coefficients (k {approximately} 10{sup {minus}5} for Fe in Si). Fe concentrations were calculated from the initial weight of the Fe pill, the molten zone geomet and the growth parameters. Values in the range of 10{sup 12}-10{sup 16} atoms/cm{sup 3} were targeted. No additional electrically active dopants were introduced. Minority charge carrier lifetime (via YAG-laser-excited, 430-MHz ultra-high-frequency-coupled, photoconductive decay) was measured on the ingots, and wafers were cut to examine grain structure and electron-beam-induced current response of grain boundaries. Observed lifetimes decreased monotonically with increasing Fe content for similar grain sizes (from {approximately}10 {mu}s to 2 {mu}s for < 10{sup {minus}3} cm{sup 2} grains, from {approximately}30 {mu}s to 2 {mu}s for {approximately}5 x 10{sup {minus}3} cm{sup 2} grains, and from {approximately}300 {mu}s to 2 {mu}s for > 10{sup {minus}2} cm{sup 2} grains) as the Fe content increased to 1 {times} 10{sup 16} atoms/cm{sup 3}.

  14. Positron annihilation lifetime in float-zone n-type silicon irradiated by fast electrons: a thermally stable vacancy defect

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, Nikolay [Martin Luther University Halle, Department of Physics, von-Danckelmann-Platz 3, 06120 Halle (Germany); Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), 700170 Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russian Federation); Krause-Rehberg, Reinhard [Martin Luther University Halle, Department of Physics, von-Danckelmann-Platz 3, 06120 Halle (Germany); Elsayed, Mohamed [Martin Luther University Halle, Department of Physics, von-Danckelmann-Platz 3, 06120 Halle (Germany); Minia University, Faculty of Science, Physics Department, 61519 Minia (Egypt); Kozlovskii, Vitalii [St. Petersburg State Polytechnical University, 195251 St. Petersburg (Russian Federation)

    2016-12-15

    Temperature dependency of the average positron lifetime has been investigated for n-type float-zone silicon, n-FZ-Si(P), subjected to irradiation with 0.9 MeV electrons at RT. In the course of the isochronal annealing a new defect-related temperature-dependent pattern of the positron lifetime spectra has been revealed. Beyond the well known intervals of isochronal annealing of acceptor-like defects such as E-centers, divacancies and A-centers, the positron annihilation at the vacancy defects has been observed in the course of the isochronal annealing from ∝ 320 C up to the limit of reliable detecting of the defect-related positron annihilation lifetime at ≥ 500 C. These data correlate with the ones of recovery of the concentration of the charge carriers and their mobility which is found to continue in the course of annealing to ∝ 570 C; the annealing is accomplished at ∝650 C. A thermally stable complex consisting of the open vacancy volume and the phosphorus impurity atom, V{sub op}-P, is suggested as a possible candidate for interpreting the data obtained by the positron annihilation lifetime spectroscopy. An extended couple of semi-vacancies, 2V{sub s-ext}, as well as a relaxed inwards a couple of vacancies, 2V{sub inw}, are suggested as the open vacancy volume V{sub op} to be probed with the positron. It is argued that a high thermal stability of the V{sub s-ext} PV{sub s-ext} (or V{sub inw}PV{sub inw.}) configuration is contributed by the efficiency of PSi{sub 5} bonding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Simulated floating zone method

    OpenAIRE

    Ozawa, Ryo; Kato, Yasuyuki; Motome, Yukitoshi

    2016-01-01

    This paper provides the simulated floating zone (SFZ) method that is an efficient simulation technique to obtain thermal equilibrium states, especially useful when domain formation prevents the system from reaching a spatially-uniform stable state. In the SFZ method, the system is heated up locally, and the heated region is steadily shifted, similar to the floating zone method for growing a single crystal with less lattice defect and impurity in experiments. We demonstrate that the SFZ method...

  16. Low-Temperature Softening Due to Vacancy Orbital with Γ8 Quartet Ground State in Boron-Doped Floating Zone Silicon

    Science.gov (United States)

    Baba, Shotaro; Akatsu, Mitsuhiro; Mitsumoto, Keisuke; Komatsu, Satoru; Horie, Kunihiko; Nemoto, Yuichi; Yamada-Kaneta, Hiroshi; Goto, Terutaka

    2013-08-01

    We have carried out low-temperature ultrasonic measurements using shear-mode ultrasound to clarify the quantum state of a vacancy orbital in boron-doped silicon grown by the floating zone (FZ) method. The elastic constants (C11-C12)/2 and C44 of the transverse mode exhibit considerable softening below 2 and 5 K down to the base temperature of 30 mK, respectively. The elastic constant C44 measured by the three ultrasonic modes (kx,uy), (kz,ux), and (kx,uz) shows the different magnetic field dependences among the configurations under applied magnetic fields along the z-axis. The elastic softening and the magnetic field dependence of the elastic constants are accounted for by the quadrupole susceptibility based on the energy level scheme of the vacancy orbital with a Γ8 quartet ground state and Γ7 doublet excited state located at an energy of 1 K. The difference in C44 between the two ultrasonic modes (kz,ux) and (kx,uz) at fields along the z-axis indicates that the Γ8 quartet ground state is slightly split by local strain in the silicon sample. The quantum state of the vacancy orbital is expected to be sensitive to strain because of the extremely large quadrupole-strain coupling energy of gΓ≈ 105 K due to the extensively spreading orbital radius of r≈ 1 nm. The differences in variation of the low-temperature softening and magnetic field dependence among eight samples cut out from different locations of the present boron-doped FZ silicon ingot evidence the inhomogeneous distribution of the vacancy concentration.

  17. Manufacturing Practices for Silicon-Based Power Diode in Fast Recovery Applications

    Directory of Open Access Journals (Sweden)

    N. Harihara Krishnan

    2011-01-01

    Full Text Available This paper reports a fast recovery semiconductor diode that was developed for use in high power applications. The diode constructed in disc-type ceramic package with a peak-inverse voltage rating of 2800 V and current rating of 710 A was fabricated using float-zone (FZ silicon wafer as the starting raw material. Alternate processes viz. gold diffusion, gamma irradiation and electron irradiation were explored for control of carrier lifetime required to tune the switching response of the diode to the desired value of 8 μs. The paper compares the results of these alternate processes. The diodes were fabricated and tested for forward conduction, reverse blocking and switching characteristics. The measured values were observed to be comparable with the design requirements. The paper presents an overview of the design, manufacturing and testing practices adopted to meet the desired diode characteristics and ratings.

  18. Radiation Response of Forward Biased Float Zone and Magnetic Czochralski Silicon Detectors of Different Geometry for 1-MeV Neutron Equivalent Fluence Monitoring

    CERN Document Server

    Mekki, J; Dusseau, Laurent; Roche, Nicolas Jean-Henri; Saigne, Frederic; Mekki, Julien; Glaser, Maurice

    2010-01-01

    Aiming at evaluating new options for radiation monitoring sensors in LHC/SLHC experiments, the radiation responses of FZ and MCz custom made silicon detectors of different geometry have been studied up to about 4 x 10(14) n(eq)/cm(2). The radiation response of the devices under investigation is discussed in terms of material type, thickness and active area influence.

  19. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  20. Silicon Carbide Schottky Barrier Diode

    Science.gov (United States)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  1. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  2. An All-Silicon Passive Optical Diode

    OpenAIRE

    Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2012-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  3. An All-Silicon Passive Optical Diode

    OpenAIRE

    Fan, Li; Wang,Jian; Varghese, Leo T.; Shen,Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2012-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  4. Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

    2003-01-01

    Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

  5. Detached and Floating-Zone Growth of Semiconductor Crystals on the ISS

    Science.gov (United States)

    Dold, P.; Kaiser, N.; Benz, K. W.; Croell, A.; Szofran, F. R.; Cobb, S.; Volz, M.; Schweizer, M.; Rose, M. Franklin (Technical Monitor)

    2000-01-01

    Understanding the mechanism of detached Bridgman growth and establishing the growth of large scale germanium-silicon crystals by the float-zone technique are the key points of the project "RDGS - Reduction of Defects in Germanium-Silicon". The contact angle of the melt and the growth angle of the crystal are essential parameters which allow a controlled use of detached growth. The contact angle was determined for a variety of different substrates and melt compositions; pBN showed the highest value for pure germanium as well as for germanium-rich GeSi melts. The growth angle of Ge(sub 0.95) Si(sub 0.05) was measured to be 8.5-10.5 degrees which concurs with the values of pure germanium and silicon, respectively. The temperature dependence and the concentration dependence of the surface tension were determined for concentrations up to 10at% silicon (partial derivative (gamma)/partial derivative T=-0.08 (raised dot) 10(exp -3)N/m (raised dot) K, partial derivative (gamma)/partial derivative (C)=2.2 (raised dot) 10(exp -3)N/m (raised dot) at%). Using these values, the critical Marangoni number indicating the transition to time-dependent thermocapillary flow will be exceeded for the growth of large scale float-zone crystals onboard the ISS. Therefore, suitable tools for flow control are required.

  6. Extra-long Float-zones Induced by Thermocapillary Flows

    Science.gov (United States)

    Chen, Yi-Ju; Steen, Paul H.

    1996-11-01

    A model problem is posed to study the influence of flow on the interfacial stability of a nearly cylindrical liquid bridge for lengths near its circumference (the Plateau-Rayleigh limit). Zero gravity is assumed. The flow is generated by a shear stress imposed on the deformable interface. The symmetry of the imposed stress mimics the thermocapillary effect induced on a float-zone by a ring heater (i.e. a full zone). Numerical solutions, complemented by a bifurcation analysis, show that bridges substantially longer than the Plateau-Rayleigh limit are possible. An interaction of the first two capillary instabilities through the stress-induced pressure gradient is responsible. Time-periodic standing waves are also predicted in certain parameter ranges. Motivation comes from extra-long float-zones observed in MEPHISTO space lab experiments (June 1994).

  7. Potential productivity benefits of float-zone versus Czochralski crystal growth

    Science.gov (United States)

    Abe, T.

    1985-01-01

    Efficient mass production of single-crystal silicon is necessary for the efficient silicon solar arrays needed in the coming decade. However, it is anticipated that there will be difficulty growing such volumes of crystals using conventional Czochralski (Cz) methods. While the productivity of single crystals might increase with a crystal diameter increase, there are two obstacles to the mass production of large diameter Czochralski crystals, the long production cycle due to slow growth rate and the high heat requirements of the furnaces. Also counterproductive would be the large resistivity gradient along the growth direction of the crystals due to impurity concentration. Comparison between Float zone (FZ) and Cz crystal growth on the basis of a crystal 150 mm in diameter is on an order of two to four times in favor of the FZ method. This advantage results from high growth rates and steady-state growth while maintaining a dislocation-free condition and impurity segregation.

  8. Degradation of the charge collection efficiency of an n-type Fz silicon diode subjected to MeV proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Barbero, Nicolò; Forneris, Jacopo [Physics Department, NIS Research Centre and CNISM, University of Torino, Via P. Giuria 1, 10250 Torino (Italy); Grilj, Veljko; Jakšić, Milko [Department for Experimental Physics, Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Räisänen, Jyrki [Department of Physics, University of Helsinki, P.O. Box 43, 00014 Helsinki (Finland); Simon, Aliz [International Atomic Energy Agency, Vienna International Centre, P.O. Box 100, 1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary); Skukan, Natko [Department for Experimental Physics, Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Vittone, Ettore, E-mail: ettore.vittone@unito.it [Physics Department, NIS Research Centre and CNISM, University of Torino, Via P. Giuria 1, 10250 Torino (Italy)

    2015-04-01

    Highlights: •Study of charge collection efficiency degradation (CCE) in Si diode due to MeV H irradiation. •CCE evaluated by micro-IBIC using 4.5 MeV Li ions to probe the damaged region. •Generation of H-donors, which perturb the electrostatic properties of the diode. -- Abstract: We present the analysis of the charge collection efficiency (CCE) degradation of float zone grown n-type silicon detectors irradiated with 1.3, 2.0 and 3.0 MeV protons. The analysis was carried out by irradiating small regions (50 × 50 μm{sup 2}) with a proton microbeam at fluences ranging from 10{sup 11} to 4·10{sup 12} ions/cm{sup 2} and probing the effect of irradiation by measuring the 4.5 MeV Li ion induced charge in full depletion conditions. The CCE degradation as function of the proton fluence shows an unexpected deviation from the linear behavior predicted by the Shockley–Read–Hall model of carrier recombination. The build-up of excess hydrogen related donors due to proton irradiations is suggested to be the cause of a significant perturbation of the electrostatic properties of the diode, which drastically change the electron trajectories and hence the induced charge mechanism.

  9. HETEROJUNCTION DIODES OF POROUS SILICON WITH SOLUBLE POLYANILINE

    Institute of Scientific and Technical Information of China (English)

    Jun-hua Fan; Mei-xiang Wan; Dao-ben Zhu

    1999-01-01

    Two kinds of heterojunction diodes of porous silicon (PS) with soluble polyaniline (PANI) were fabricated. One is a heterojunction diode of PS with water-soluble copolymer of polyaniline(PAOABSA),Al/PS-PAOABSA/Au cell as rectifying diode. Another is a heterojunction diode of PS with soluble polyaniline doped with DBSA, Al/PS-PANI (DBSA)/Au cell as light emitting diode (LED). The rectifying characteristics of the rectifying diodes were measured as a function of the degree of sulfonation and thickness of the copolymers, as well as oxidation of PS. The rectifying ratio of the heterojunction can reach 5.0×104 at ±3 V bias. For the LED, the photoluminescence (PL) and electroluminescence (EL) spectra were measured and discussed.

  10. Phosphorus diffusion in float zone silicon crystal growth

    DEFF Research Database (Denmark)

    Larsen, Theis Leth

    2000-01-01

    .8'' conguration, for two different values of the recombination factor. The calculation of the 0.8'' crystal is compared to DLTS measurements, revealing good agreement for one of the recombination factors, which however does not fit the Voronkov theory. Both factors are used in the simulation of the two 4...

  11. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  12. Active graphene–silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

  13. Active graphene-silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  14. Active graphene–silicon hybrid diode for terahertz waves

    OpenAIRE

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The di...

  15. Microstructure and levitation properties of floating zone melted YBCO samples

    Energy Technology Data Exchange (ETDEWEB)

    Bashkirov, Yu.A.; Fleishman, L.S.; Vdovin, A.B.; Zubritsky, I.A.; Smirnov, V.V.; Vinogradov, A.V. [Krzhizhanovsky Power Engineering Inst., Moscow (Russian Federation)

    1994-07-01

    Radiation zone melting has been used to produce texture in sintered YBCO cylindrical samples. Microstructural analysis by electron microscopy and pole figure measurements reveals that the production process gives rise to a preferential orientation within large domains. D.C. transport measurements show that changes in alignment orientation can result in the inability to carry a transport current. Both a.c. magnetic field shielding and levitation properties are substantially improved by the floating zone melting, the levitation force being increased with the texture domain size growth.

  16. Silicon light-emitting diode antifuse: properties and devices

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.

    2006-01-01

    This paper reviews our research on the silicon light-emitting diode antifuse, a tiny source featuring a full white-light spectrum. Optical and electrical properties of the device are discussed together with the modelling of the spectral emission, explaining the emitting mechanism of the device. An e

  17. Effect of non-uniform magnetic field on crystal growth by floating-Zone method in microgravity

    Institute of Scientific and Technical Information of China (English)

    LI; Kai(

    2001-01-01

    [1]Markov, E. V., Antropov, V. Yu, Biryukov, V. M. et al., Space materials for microelectronics, in Proceedings of the Joint Xth European and VIth Russian Symposium on Physical Sciences in Microgravity, St. Petersburg, Russia (eds. Av-duyevsky, V. S., Polezhaev, V. I.), Moscow: RAS, 1997, Vol. 2, 11-20.[2]Croll, A., Dold, P., Benz, K. W., Segregation in Si floating-zone crystals grown under microgravity and in a magnetic field, J. Crystal Growth, 1994, 137: 95-101.[3]Leon de, N., Guldberg, J., Sailing, J. , Growth of homogeneous high resistivity FZ silicon crystals under magnetic field bias, J. Crystal Growth, 1981, 55: 406-408.[4]Robertson, D. G., O' connor Jr., D. J., Magnetic field effects on float-zone Si crystal growth: strong axial fields, J. Crystal Growth, 1986, 76: 111-122.[5]Series, R. W., Hurle, D. T. J., The use of magnetic field in semiconductor crystal growth, J. Crystal Growth, 1991, 113:305-328.[6]Lan, C. W. , Effect of axisymmetric magnetic fields on radial dopant segregation of floating-zone silicon growth in a mirror fur-nace, J. Crystal Growth, 1996, 169: 269-278.[7]Li, K., Hu, W. R. , Numerical simulation of magnetic field design for damping thermocapillary convection in a floating half zone, J. Crystal Growth, 2001, 222: 677-684.[8]Li. K., Hu, W. R., Magnetic design for crystal growth, 3rd International Workshop on Modeling in Crystal Growth, New York, USA, 2000, to be published in J. Crystal Growth.[9]Patankar, S. V., Advanced Computational Heat Transfer and Fluid Flow, Graduate Student Course 8352 of Mechanical Engi-neering Department at Univ. of Minnesota, USA.

  18. In vivo dosimetry with silicon diodes in total body irradiation

    Science.gov (United States)

    Oliveira, F. F.; Amaral, L. L.; Costa, A. M.; Netto, T. G.

    2014-02-01

    The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments.

  19. Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy; Caracterizacao das propriedades dosimetricas de diodos de silicio empregados em radioterapia com fotons

    Energy Technology Data Exchange (ETDEWEB)

    Bizetto, Cesar Augusto

    2013-07-01

    In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer KeithleyÒ 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens PrimusÒ linear accelerator), 6 and 15 MV (Novalis TXÒ) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens PrimusÒ the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TXÒ the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

  20. Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy; Caracterizacao das propriedades dosimetricas de diodos de silicio empregados em radioterapia com feixe de fotons

    Energy Technology Data Exchange (ETDEWEB)

    Bizetto, Cesar Augusto

    2013-07-01

    In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley Registered-Sign 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus Registered-Sign linear accelerator), 6 and 15 MV (Novalis TX Registered-Sign ) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX Registered-Sign the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm{sup 2}, with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

  1. Study on electroluminescence from porous silicon light-emitting diode

    Institute of Scientific and Technical Information of China (English)

    Yajun Yang; Qingshan Li; Xianyun Liu

    2006-01-01

    @@ Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

  2. Proton computed tomography using a 1D silicon diode array.

    Science.gov (United States)

    Wang, Peng; Cammin, Jochen; Bisello, Francesca; Solberg, Timothy D; McDonough, James E; Zhu, Timothy C; Menichelli, David; Teo, Boon-Keng Kevin

    2016-10-01

    Proton radiography (PR) and proton computed tomography (PCT) can be used to measure proton stopping power directly. However, practical and cost effective proton imaging detectors are not widely available. In this study, the authors investigated the feasibility of proton imaging using a silicon diode array. A one-dimensional silicon diode detector array (1DSDA) was aligned with the central axis (CAX) of the proton beam. Polymethyl methacrylate (PMMA) slabs were used to find the correspondence between the water equivalent thickness (WET) and 1DSDA channel number. Two-dimensional proton radiographs were obtained by translation and rotation of a phantom relative to CAX while the proton nozzle and 1DSDA were kept stationary. A PCT image of one slice of the phantom was reconstructed using filtered backprojection. PR and PCT images of the PMMA cube were successfully acquired using the 1DSDA. The WET of the phantom was measured using PR data. The resolution and maximum error in WET measurement are 2.0 and 1.5 mm, respectively. Structures down to 2.0 mm in size could be resolved completely. Reconstruction of a PCT image showed very good agreement with simulation. Limitations in spatial resolution are attributed to limited spatial sampling, beam collimation, and proton scatter. The results demonstrate the feasibility of using silicon diode arrays for proton imaging. Such a device can potentially offer fast image acquisition and high spatial and energy resolution for PR and PCT.

  3. Silicon Carbide Diodes Performance Characterization at High Temperatures

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

    2004-01-01

    NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

  4. Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

    Science.gov (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

    2004-01-01

    Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the

  5. Hybrid indium phosphide-on-silicon nanolaser diode

    Science.gov (United States)

    Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie; Monnier, Paul; Beaudoin, Gregoire; Sagnes, Isabelle; Raj, Rama; Raineri, Fabrice

    2017-04-01

    The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.

  6. Fabrication of PIN diode detectors on thinned silicon wafers

    CERN Document Server

    Ronchin, Sabina; Dalla Betta, Gian Franco; Gregori, Paolo; Guarnieri, Vittorio; Piemonte, Claudio; Zorzi, Nicola

    2004-01-01

    Thin substrates are one of the possible choices to provide radiation hard detectors for future high-energy physics experiments. Among the advantages of thin detectors are the low full depletion voltage, even after high particle fluences, the improvement of the tracking precision and momentum resolution and the reduced material budget. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of tetra-methyl ammonium hydroxide etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 57 and 99mum thick membranes. They have been tested, showing a very low leakage current ( less than 0.4nA/cm**2) and, as expected, a very low depletion voltage ( less than 1V for the 57mum membrane). The paper describes the technological approach used for devices fabrication and reports selected results from the electrical characterization.

  7. Lithium ion irradiation of standard and oxygenated silicon diodes

    CERN Document Server

    Candelori, A; Bisello, D; Giubilato, P; Kaminski, A; Litovchenko, A P; Lozano, A; Petrie, J R; Rando, R; Ullán, M; Wyss, J

    2004-01-01

    The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation- hard detectors for fluences up to 10/sup 16/ 1-MeV equivalent neutrons/cm/sup 2/. These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. Energetic (58 MeV) lithium ions present a non-ionizing energy loss approximately=27.3 times higher than 27 MeV protons, and could consequently be a new promising radiation source for investigating the radiation hardness of silicon detectors up to very high particle fluences. Starting from this premise, we have investigated the degradation, as measured by the leakage current density increase and depletion voltage variations in the short and long-term characteristics, induced by 58 MeV Li ions in state-of-the-art silicon diodes processed by two different manufacturers on standard and oxygenated silicon substrates. Finally, the correlation between t...

  8. Neutron irradiation of silicon diodes at temperatures of +20deg C and -20deg C

    Energy Technology Data Exchange (ETDEWEB)

    Anghinolfi, F.; Glaser, M.; Heijne, E.H.M.; Jarron, P.; Lemeilleur, F.; Occelli, E.; Poppleton, A. (CERN, Geneva (Switzerland)); Bardos, R.; Gorfine, G.; Moorhead, G.; Taylor, G.; Tovey, S. (School of Physics, Univ. Melbourne, Parkville (Australia)); Bates, S.J.; Munday, D.J.; Parker, M.A. (Cavendish Lab., Univ. Cambridge (United Kingdom)); Bonino, R.; Clark, A.G.; Wu, X. (DPNC, Univ. Geneva (Switzerland)); Claussen, N.; Fretwurst, E.; Lindstroem, G.; Papendick, B.; Schulz, T.; Wunstorf, R. (Inst. fuer Experimentalphysik, Univ. Hamburg (Germany)); Goessling, C.; Klingenberg, R.; Pagel, H.; Pollmann, D.; Rolf, A. (Inst. fuer Physik, Univ. Dortmund (Germany)); Scampoli, P. (Dipt. di Fisica, Univ. Perugia (Italy) INFN, Sezione Perugia (Italy)); Weidberg, A.R. (Dept. of Nuclear Physics, Oxford Univ. (United Kingdom)); RD2 Collaboration

    1993-03-01

    We report measurements of the behaviour of silicon diodes when exposed to integrated neutron doses of up to 5x10[sup 13] neutrons/cm[sup 2]. The measurements have been made at diode temperatures between room temperature and -20deg C. From measurements of the diode leakage current and depletion voltage, and consequent evaluations of the effective impurity concentration, the temperature dependence of these quantities is discussed in terms of the annealing behaviour of the diodes. Comments are made on the suitability of silicon as a detector medium for particle physics experiments at future accelerators. (orig.).

  9. Electric field profiling by current transients in silicon diodes

    CERN Document Server

    Menichelli, D; Borchi, E; Toci, G

    2002-01-01

    A novel method, suitable to evaluate the electric field distribution in the space charge region of silicon diodes directly from the measurement of their pulse current response, is proposed. A Transient Current Technique experimental setup, based on a nano-second UV laser, is used for this purpose. It is shown that the problem of solving the basic equations, connecting the current response to the electric field distribution, can be expressed by a linear integral equation. An iterative mathematical procedure is used to obtain the solution, and a spatial resolution of about 10 mu m, comparable to the accuracy obtainable from other commonly used techniques, is deduced from the numerical tests. A preliminary analysis of measured data has also been carried out; the results are encouraging, but they point out that a refinement of the transport model is needed to reach a satisfactorily practical applicability.

  10. Electric field profiling by current transients in silicon diodes

    Energy Technology Data Exchange (ETDEWEB)

    Menichelli, D. E-mail: menichelli@ingfil.ing.unifi.it; Serafini, D.; Borchi, E.; Toci, G

    2002-01-11

    A novel method, suitable to evaluate the electric field distribution in the space charge region of silicon diodes directly from the measurement of their pulse current response, is proposed. A Transient Current Technique experimental setup, based on a nano-second UV laser, is used for this purpose. It is shown that the problem of solving the basic equations, connecting the current response to the electric field distribution, can be expressed by a linear integral equation. An iterative mathematical procedure is used to obtain the solution, and a spatial resolution of about 10 {mu}m, comparable to the accuracy obtainable from other commonly used techniques, is deduced from the numerical tests. A preliminary analysis of measured data has also been carried out; the results are encouraging, but they point out that a refinement of the transport model is needed to reach a satisfactorily practical applicability.

  11. The influence of edge effects on the determination of the doping profile of silicon pad diodes

    Science.gov (United States)

    Fretwurst, E.; Garutti, E.; Hufschmidt, M.; Klanner, R.; Kopsalis, I.; Schwandt, J.

    2017-09-01

    Edge effects for square p+ n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is found that the edge contributions are significant and that they strongly influence the determination of the doping concentration using capacitance-voltage measurements. After edge correction, the bulk doping of the pad diodes is found to be uniform within ± 1.5 %, which agrees with expectations. The edge-correction method is verified using TCAD simulations of two circular pad diodes with different radii.

  12. Enhanced diode performance in cadmium telluride–silicon nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Akgul, Funda Aksoy, E-mail: fundaaksoy01@gmail.com [Department of Physics, Nigde University, 51240 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Akgul, Guvenc, E-mail: guvencakgul@gmail.com [Bor Vocational School, Nigde University, 51700 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Gullu, Hasan Huseyin [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Unalan, Husnu Emrah [Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Turan, Rasit [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey)

    2015-09-25

    Highlights: • Vertically well oriented Si nanowire arrays on Si wafer were synthesized. • Semiconductor CdTe thin film/Si nanowire devices were successfully fabricated. • Optoelectronic properties of the fabricated devices were investigated. • Enhanced electrical and diode properties for the devices were observed. • The devices exhibited strong photosensitivity in near infrared region. - Abstract: We report on the structural and optoelectronic characteristics and photodetection properties of cadmium telluride (CdTe) thin film/silicon (Si) nanowire heterojunction diodes. A simple and cost-effective metal-assisted etching (MAE) method is applied to fabricate vertically oriented Si nanowires on n-type single crystalline Si wafer. Following the nanowire synthesis, CdTe thin films are directly deposited onto the Si nanowire arrays through RF magnetron sputtering. A comparative study of X-ray diffraction (XRD) and Raman spectroscopy shows the improved crystallinity of the CdTe thin films deposited onto the Si nanowires. The fabricated nanowire based heterojunction devices exhibit remarkable diode characteristics, enhanced optoelectronic properties and photosensitivity in comparison to the planar reference device. The electrical measurements revealed that the diodes have a well-defined rectifying behavior with a superior rectification ratio of 10{sup 5} at ±5 V and a relatively small ideality factor of n = 1.9 with lower reverse leakage current and series resistance at room temperature in dark condition. Moreover, an open circuit voltage of 120 mV is also observed under illumination. Based on spectral photoresponsivity measurements, the nanowire based device exhibits a distinct responsivity (0.35–0.5 A W{sup −1}) and high detectivity (6 × 10{sup 12}−9 × 10{sup 12} cm Hz{sup 1/2} W{sup −1}) in near-infrared wavelength region. The enhanced device performance and photosensitivity is believed to be due to three-dimensional nature of the interface between

  13. The influence of edge effects on the determination of the doping profile of silicon pad diodes

    CERN Document Server

    Hufschmidt, M; Garutti, E; Klanner, R; Kopsalis, I; Schwandt, J

    2016-01-01

    Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is shown that the doping concentration derived from the capacitance-voltage measurements with and without edge corrections differ significantly. After the edge correction, the bulk doping of the pad diodes is found to be uniform within +/- 1.5%. The voltage dependence of the edge capacitance is compared to the predictions of two simple models.

  14. Study on photon sensitivity of silicon diodes related to materials used for shielding

    Science.gov (United States)

    Moiseev, T.

    1999-08-01

    Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter.

  15. Floating zone growth and magnetic properties of Y2C two-dimensional electride

    Science.gov (United States)

    Otani, Shigeki; Hirata, Kazuto; Adachi, Yutaka; Ohashi, Naoki

    2016-11-01

    The floating zone method was used to obtain single crystals several mm in size of the low-temperature rhombohedral form of Y2C rather than its typical rocksalt-type cubic form. This was achieved through optimization of the chemical compositions of the starting materials with the aim of producing a two-dimensional electride material. The crystals obtained exhibited a paramagnetic temperature-dependence at 1.8-300 K, with no trace of any obvious magnetic ordering.

  16. Zirconate Pyrochlore Frustrated Magnets: Crystal Growth by the Floating Zone Technique

    Directory of Open Access Journals (Sweden)

    Monica Ciomaga Hatnean

    2016-07-01

    Full Text Available This article reviews recent achievements on the crystal growth of a new series of pyrochlore oxides—lanthanide zirconates, which are frustrated magnets with exotic magnetic properties. Oxides of the type A 2 B 2 O 7 (where A = Rare Earth, B = Ti, Mo have been successfully synthesised in single crystal form using the floating zone method. The main difficulty of employing this technique for the growth of rare earth zirconium oxides A 2 Zr 2 O 7 arises from the high melting point of these materials. This drawback has been recently overcome by the use of a high power Xenon arc lamp furnace for the growth of single crystals of Pr 2 Zr 2 O 7 . Subsequently, large, high quality single crystals of several members of the zirconate family of pyrochlore oxides A 2 Zr 2 O 7 (with A = La → Gd have been grown by the floating zone technique. In this work, the authors give an overview of the crystal growth of lanthanide zirconates. The optimum conditions used for the floating zone growth of A 2 Zr 2 O 7 crystals are reported. The characterisation of the crystal boules and their crystal quality is also presented.

  17. DESIGN, FABRICATION AND RF CHARACTERIZATION OF KA-BAND SILICON IMPATT DIODE

    Directory of Open Access Journals (Sweden)

    TAPAS KUMAR PAL,

    2010-09-01

    Full Text Available A silicon (p+nn+ SDR IMPATT diode for Ka-band operation has been designed by using a double iterative DC and Small signal simulation which involves simultaneous solution of Poisson’s equation and Carrier continuity equation, satisfying appropriate boundary conditions in the depletion layer edges. Using the design parameters,silicon epitaxial n/n+ wafers of appropriate thickness and resistivity of the epitaxial layer have been selected for fabrication of (p+nn+ SDR IMPATT diode for Ka-band operation. The (p+nn+ SDR IMPATT diode has been fabricated through diffusion technique. The optimized process steps of fabrication, starting from wafer cleaningto packaging have been described in details. The DC V-I and RF characteristics of fabricated IMPATT diode have been measured by using an integrated heat sink cum resonant cap waveguide cavity.

  18. The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

    Directory of Open Access Journals (Sweden)

    Wen-Chung Chang

    2016-06-01

    Full Text Available Vertically aligned p-type silicon nanowire (SiNW arrays were fabricated through metal-assisted chemical etching (MACE of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM, X-ray diffraction (XRD, and current−voltage (I−V measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

  19. Study of silicon PIN diode responses to low energy gamma-rays

    Science.gov (United States)

    Lee, S. C.; Jeon, H. B.; Kang, K. H.; Park, H.

    2016-11-01

    Low energy gamma-ray detectors play an important role in diagnosis in nuclear medicine, in detection of gamma-ray bursts for gravitational wave research and in detection of underground nuclear tests. The silicon positive-intrinsic-negative (PIN) diode detector is useful for detection of low energy gamma radiation without using a scintillator because it generates a high signal in a small active volume, has a fast response time and has good intrinsic energy resolution. We measured the detector responses, energy resolutions and signal-to-noise ratios for various gamma energies by using manufactured silicon PIN diode and photodiodes. Radioactive gamma sources, 241Am, 133Ba, and 57Co, providing gamma-rays with energies between 14.4 keV and 136.5 keV are used for the measurements. The energy resolution and the signal-to-noise ratio for 14.4 keV gamma-ray are measured to be 17.1 % and 12.8 for a 500 μm thick silicon diode. The energy resolutions measured at the FWHM for 59.5 keV and 122.1 keV gamma-rays by using the silicon diode are better by up to two times compared to those obtained using the NaI:Tl or the BGO scintillator with a photomultiplier tube. The dependence of detection speeds of the signals on the diode's thickness is also measured.

  20. Thermal sensing of cryogenic wind tunnel model surfaces Evaluation of silicon diodes

    Science.gov (United States)

    Daryabeigi, K.; Ash, R. L.; Dillon-Townes, L. A.

    1986-01-01

    Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

  1. Thermal sensing of cryogenic wind tunnel model surfaces - Evaluation of silicon diodes

    Science.gov (United States)

    Daryabeigi, Kamran; Ash, Robert L.; Dillon-Townes, Lawrence A.

    1986-01-01

    Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

  2. Microgravity silicon zoning investigation

    Science.gov (United States)

    Kern, E. L.; Gill, G. L., Jr.

    1985-01-01

    The flow instabilities in floating zones of silicon were investigated and methods for investigation of these instabilities in microgravity were defined. Three principal tasks were involved: (1) characterization of the float zone in small diameter rods; (2) investigation of melt flow instabilities in circular melts in silicon disks; and (3) the development of a prototype of an apparatus that could be used in near term space experiments to investigate flow instabilities in a molten zone. It is shown that in a resistance heated zoner with 4 to 7 mm diameter silicon rods that the critical Marangoni number is about 1480 compared to a predicted value of 14 indicative that viable space experiments might be performed. The prototype float zone apparatus is built and specifications are prepared for a flight zoner should a decision be reached to proceed with a space flight experimental investigation.

  3. Preparation and Raman Spectrum of Rutile Single Crystals Using Floating Zone Method

    Institute of Scientific and Technical Information of China (English)

    GUO Xing-Yuan; XU Da-Peng; DING Zhan-Hui; SU Wen-Hui

    2006-01-01

    With anatase-type titanium dioxide as the raw materials, the rutile type titanium dioxide single crystal is prepared using the floating zone method. The results ofXRD measurement show that the grown crystal is highly crystalline with a rutile structure, which has orientation to the c-axis. The four Raman vibration characteristic peaks (143, 240, 450 and 610cm-1 ) at room temperature show that the crystalline structure of the single crystal is a typical rutile phase, meanwhile a new Raman peak at around 690cm-1 is found. The results of the Raman measurement at various temperatures for the single crystal show that the Raman frequency shifts are different.

  4. Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

    NARCIS (Netherlands)

    Bijlsma, S.J.; Bijlsma, Sipke J.; van Kranenburg, H.; Nieuwesteeg, K.J.B.M.; Pitt, Michael G.; Verweij, Jan F.; Verweij, J.F.

    1996-01-01

    Electrical breakdown, both intrinsic and extrinsic, of thin film diodes used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, thermal measurements, thermal 3D simulations, electrical simulations and post breakdown observations. The diodes

  5. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

    Directory of Open Access Journals (Sweden)

    Nazek El-Atab

    2013-10-01

    Full Text Available A thin-film ZnO(n/Si(p+ heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM AC-in-Air method in addition to conductive AFM (CAFM were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON ∼3.5 V. The measured breakdown voltage (VBR and electric field (EBR for this diode are 5.4 V and 3.86 MV/cm, respectively.

  6. Multifunctional graphene sheets embedded in silicone encapsulant for superior performance of light-emitting diodes.

    Science.gov (United States)

    Lee, Seungae; Hong, Jin-Yong; Jang, Jyongsik

    2013-07-23

    Graphene nanosheets with uniform shape are successfully incorporated into a silicone encapsulant of a light-emitting diode (LED) using a solvent-exchange approach which is a facile and straightforward method. The graphene nanosheets embedded in the silicone encapsulant have a multifunctional role which improves the performance of light-emitting diodes. The presence of graphene gives rise to effective heat dissipation, improvement of protection ability from external stimuli, such as moisture and hazardous gas, and enhancement of mechanical properties such as elastic modulus and fracture toughness. Consequently, the LEDs composed of a graphene-embedded silicone encapsulant exhibit long-term stability without loss of luminous efficiency by addition of relatively small amounts of graphene. This novel strategy offers a feasible candidate for their practical or industrial applications.

  7. Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

    Science.gov (United States)

    Vukajlović Pleština, Jelena; Đerek, Vedran; Francaviglia, Luca; Amaduzzi, Francesca; Potts, Heidi; Ivanda, Mile; Morral, Anna Fontcuberta i.

    2017-07-01

    Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous silicon. Here, we present a method for the large-area fabrication of porous silicon microtubes by the stain etching of silicon micropillar arrays. We explain and model how the formation of the microtubes is influenced by the morphology of the substrate, especially the concave or convex character of the 3D features. Light emission is demonstrated at the micro- and nanoscale respectively by photo- and cathodoluminescence. Finally, we demonstrate a 0.55 cm2 device that can work as a photodetector with 2.3% conversion efficiency under one sun illumination, and also as a broadband light emitting diode, illustrating the applicability of our results for optoelectronic applications.

  8. Influence of controlling vibrations on heat transfer in floating zone crystal growth*

    Science.gov (United States)

    Fedyushkin, A. I.

    The crystal growth processes of monocrystals are strongly vibrational sensitive systems and in particular it concerns to a floating zone method as presence of a free surface and two fronts of crystallization and melting that aggravate it The given work is devoted to numerical investigations of the influence of controlling vibrations on heat transfer during crystal growth by floating zone technique Normal and weightless environment conditions are considered Mathematical simulation is performed on the numerical solutions of basis unsteady Navier-Stokes equations for incompressible fluid flows and energy equation 2D axisymmetric geometry was used in model Marangoni convection and radiation condition on the curvature free surface were taken in account The calculations of the shape of a free surface of a liquid zone and influences on it of a corner of wetting force of weight and size of factor of a superficial tension are carried out The simulations of convective heat transfer for real curvature free surface of a liquid zone with and without the taking into account of the following factors parameters of radiation rotations natural and Marangoni convection and vibrations are carried out The given calculations are carried out for semiconductors melts with Prandtl number Pr 1 and for oxides Pr 1 The influence of vibrations of a crystal on melt flow and on the wide of dynamic and thermal boundary layers at melt-crystal interface is studied The action of vibrations on an enhancement of heat fluxes at the melt crystal interface is shown

  9. Influence of gravitational and vibrational convection on the heat- and mass transfer in the melt during crystal growing by Bridgman and floating zone methods

    Science.gov (United States)

    Fedorov, Oleg

    2016-07-01

    Space materials science is one of the priorities of different national and international space programs. The physical processes of heat and mass transfer in microgravity (including effect of g-jitter) is far from complete clarity, especially for important practical technology for producing crystals from the melt. The idea of the impact on crystallizing melt by low frequency vibration includes not only the possibility to suppress unwanted microaccelerations, but also to actively influence the structure of the crystallization front. This approach is one of the most effective ways to influence the quality of materials produced in flight conditions. The subject of this work is the effect of vibrations on the thermal and hydrodynamic processes during crystal growth using Bridgman and floating zone techniques, which have the greatest prospect of practical application in space. In the present approach we consider the gravitational convection, Marangoni convection, as well as the effect of vibration on the melt for some special cases. The results of simulation were compared with some experimental data obtained by the authors using a transparent model substance - succinonitrile (Bridgman method), and silicon (floating zone method). Substances used, process parameters and characteristics of the experimental units correspond the equipment developed for onboard research and serve as a basis for selecting optimum conditions vibration exposure as a factor affecting the solidification pattern. The direction of imposing vibrations coincides with the axis of the crystal, the frequency is presented by the harmonic law, and the force of gravity was varied by changing its absolute value. Mathematical model considered axisymmetric approximation of joint convective-conductive energy transfer in the system crystal - melt. Upon application of low-frequency oscillations of small amplitude along the axis of growing it was found the suppression of the secondary vortex flows near the

  10. Comparison of silicone and spin-on glass packaging materials for light-emitting diode encapsulation

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Liann-Be; Pan, Ke-Wei; Yen, Chia-Yi [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Jeng, Ming-Jer, E-mail: mjjeng@mail.cgu.edu.tw [Department of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China); Wu, Chun-Te; Hu, Sung-Cheng; Kuo, Yang-Kuao [Chemical Systems Research Division, Chung-Shan Institute of Science and Technology Armaments Bureau, MND, Taoyuan, Taiwan (China)

    2014-11-03

    Traditional white light light-emitting diode (LED) encapsulation is performed by mixed phosphors and silicone coating on LED die. However, this encapsulation with silicone coating incurs overheated temperatures and yellowing problem. Therefore, this work attempts to replace silicone paste by using spin-on-glass (SOG) materials. Experimental results indicate that although initial brightness of SOG-based packaging is lower than that of silicone packaging, its light attenuation is significantly lower than that of silicone for a long lighting time. After the LED power is turned on for 12 h, the brightness of LED with silicone and SOG material packaging decreases from 84 to 48 lm and 73 to 59 lm, respectively. Therefore, SOG material provides an alternative packaging solution for high power LED lighting applications. - Highlights: • Spin-on-glass (SOG) material was used to replace silicone coating for LED packaging. • Initial brightness of SOG packaging is lower than that of silicone packaging. • Over time, light attenuation in SOG is much lower than that in silicone. • Color rendering index and brightness of LED packaging was optimized by Taguchi method.

  11. Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

    Directory of Open Access Journals (Sweden)

    Si eLi

    2015-02-01

    Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.

  12. Band-gap narrowing in the space-charge region of heavily doped silicon diodes

    Science.gov (United States)

    Lowney, Jeremiah R.

    1985-02-01

    The densities of states of the valence and conduction bands have been calculated in the space-charge region of a heavily doped linearly graded p- n junction silicon diode. Both the donor and acceptor densities were chosen to be equal to 6.2 × 10 18 cm -3. The results showed the emergence of band tails which penetrated deeply into the energy gap and accounted for the band-gap narrowing observed in such a diode by analysis of capacitance vs voltage measurements of the built-in voltage.

  13. Proton irradiation effects in silicon devices

    Energy Technology Data Exchange (ETDEWEB)

    Simoen, E.; Vanhellemont, J.; Alaerts, A. [IMEC, Leuven (Belgium)] [and others

    1997-03-01

    Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

  14. Light emitting diodes on silicon substrates: preliminary results

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Weiming; Pedesseau, Laurent; Boyer-Richard, Soline; Folliot, Herve; Chevalier, Nicolas; Cornet, Charles; Letoublon, Antoine; Durand, Olivier; Labbe, Chistophe; Gicquel, Maud; Lecorre, Alain; Even, Jacky; Loualiche, Slimane [CNRS UMR 6082 FOTON, INSA, Rennes (France); Moreac, Alain [I.P.R. UMR-CNRS, Universite Rennes 1 (France); Bondi, Alexandre

    2009-10-15

    III-V quantum wells (QW) superlattices have been grown by molecular beam epitaxy on GaP substrates for photonics applications on silicon. We first present room temperature photoluminescence (PL) results for GaAsP/GaP QWs. A detailed analysis of low temperature PL experiments is then performed. QW contribution is pointed out, and the structuration of the QW emission is attributed to LA phonon replica. A comparison with electronic bandstructure is performed, and a discussion is proposed on the nature of the observed transition (direct or indirect). Finally, it is shown that these QWs can be used as active zone in light emitters on silicon. Growth of good quality GaP epilayers on silicon is also presented. The crystalline quality of the deposited GaP near the GaP/Si interface is studied by Raman spectroscopy. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Using silicon diodes for detecting the liquid-vapor interface in hydrogen

    Science.gov (United States)

    Dempsey, Paula J.; Fabik, Richard H.

    1992-01-01

    Tests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition from vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.

  16. Structural features of Ge(Ga) single crystals grown by the floating zone method in microgravity

    Science.gov (United States)

    Prokhorov, I. A.; Zakharov, B. G.; Senchenkov, A. S.; Egorov, A. V.; Camel, D.; Tison, P.

    2008-11-01

    Structural features of the Ge(Ga) single crystal grown by the floating zone (FZ) method in microgravity environment aboard the FOTON-9 spacecraft are investigated by methods of X-ray topography, double-crystal diffractometry, selective chemical etching and spreading resistance measurements. It is established that the crystal structure is characterized by the presence of an incompletely melted region and defects caused by its formation. Growth striations revealed in regrown part of the crystal, testify to development of non-stationary capillary Marangoni convection in melt at the realized parameters of FZ remelting under space conditions. Periodicity of the growth striations is compared to frequency characteristics of heat flux pulsations through the crystallization front, found as a result of numerical simulation of melt hydrodynamics.

  17. Floating zone growth of α-Na0.90MnO2 single crystals

    Science.gov (United States)

    Dally, Rebecca; Clément, Raphaële J.; Chisnell, Robin; Taylor, Stephanie; Butala, Megan; Doan-Nguyen, Vicky; Balasubramanian, Mahalingam; Lynn, Jeffrey W.; Grey, Clare P.; Wilson, Stephen D.

    2017-02-01

    Single crystal growth of α-NaxMnO2 (x=0.90) is reported via the floating zone technique. The conditions required for stable growth and intergrowth-free crystals are described along with the results of trials under alternate growth atmospheres. Chemical and structural characterizations of the resulting α-Na0.90MnO2 crystals are performed using ICP-AES NMR, XANES, XPS, and neutron diffraction measurements. As a layered transition metal oxide with large ionic mobility and strong correlation effects, α-NaxMnO2 is of interest to many communities, and the implications of large volume, high purity, single crystal growth are discussed.

  18. Floating Zone Growth and Thermionic Emission Property of Single Crystal CeB6

    Institute of Scientific and Technical Information of China (English)

    BAO Li-Hong; ZHANG Jiu-Xing; ZHOU Shen-Lin; ZHANG Ning; XU Hong

    2011-01-01

    @@ Large-sized and high-quality cerium hexaboride(CeB6) single crystals are successfully grown yb the optical floating zone method.The structure, chemical composition and thermionic emission properties of the crystal are characterized by x-ray diffraction, x-ray fluorescence and emission measurements, respectively.Based on the observation of single crystal diffraction, the relative density of feed rods has a great effect on the quality of the grown crystal.The thermionic emission measurement results show that the emission current density of the single crystal is 47.1 A/cm2 at 1873K with an applied voltage of 1 kV,which is about two times larger than the value for polycrystalline samples.The single crystal possesses excellent emission current stability.Therefore, it is expected that CeBs single crystal is a very promising material for thermionic cathode applications.

  19. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  20. Technology Computer-Aided Design and Study of Prototypes of a Silicon Zener Diode

    Science.gov (United States)

    Dudar, N. L.; Borzdov, V. M.; Turtsevich, A. S.

    2014-07-01

    A technology for manufacture of a silicon Zener diode with a stabilizing voltage of 6.5 V has been proposed. The resistivity of the substrate and the regime of phosphorus diffusion into the substrate have been determined, which ensure required values of the stabilizing voltage under room-temperature conditions and at two boundary temperatures: -55 and 150°C. Modeling data have been compared to experimental results.

  1. Growth of Nd{sub 2}TiO{sub 5} single crystal using optical floating zone technique

    Energy Technology Data Exchange (ETDEWEB)

    Murugesan, G.; Kalainathan, S., E-mail: kalainathan@yahoo.com [Centre for Crystal Growth, School of Advanced Sciences, VIT University, Vellore-632014 (India); Nithya, R.; Ravindran, T. R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 (India)

    2015-06-24

    Single crystals of Nd{sub 2}TiO{sub 5} were grown using Optical Floating zone technique in oxygen atmosphere by spontaneous nucleation. Powder X-ray diffraction pattern showed that the grown single crystal is of homogeneous composition. Laue diffraction was recorded in both transmission and backscattering geometries to check the crystal quality. Vibrational properties were analyzed using Raman measurements.

  2. Observation of field-induced electron emission in porous polycrystalline silicon nano-structured diode

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joo Won; Kim, Hoon; Ju, Byeong Kwon [Korea Institute of Science and Technology, Seoul (Korea, Republic of); Lee, Yun Hi [Korea Univ., Seoul (Korea, Republic of); Jang, Jin [Kyunghee Univ., Seoul (Korea, Republic of)

    2003-02-01

    Field-induced electron emission properties of porous poly-silicon nano-structured (PNS) diodes were investigated as a function of anodizing conditions, including morphological analysis, various kinds of top electrode thickness and the measuring substrate temperature. Also, the vacuum packaging process was performed by the normal glass frit method. The PNS layer was formed on heavily-dope n-type <100> Si substrate. Non-doped poly-silicon layer was grown by low-pressure chemical vapor deposition (LPCVD) to a thickness of 2mm. Subsequently, the poly-silicon layer was anodized in a mixed solution HF (50 wt%): ethanol(99.8 wt%) = 1:1 as a function of anodizing condition. After anodizing, the PNS layer was thermally oxidized for 1 hr at 900 .deg. C. Subsequently, the top electrode was deposited as a function of Au thickness using E-beam evaporator and, in order to establish ohmic contact, thermally evaporated Al was deposited on the back side of a Si substrate. The prepared PNS diode was packaged using the normal vacuum sealing method. After the vacuum sealing process, the PNS diode was mounted on the PC measurement table. When a positive bias was applied to the top electrode, the electron emission was observed, which was caused by field-induced electron emission through the top metal.

  3. Powerful diode nanosecond current opening switch made of p-silicon ( p-SOS)

    Science.gov (United States)

    Grekhov, I. V.; Lyublinskii, A. G.; Belyakova, E. I.

    2016-03-01

    The nanosecond semiconductor diode-based opening switch (SOS-diode) capable of switching currents with densities up to several tens of kiloamperes per cubic centimeter represents a p + p'Nn+ silicon structure fabricated by the deep simultaneous diffusion doping (to about 200 μm) of n-Si by Al and B from one side and P from the other. In the SOS mode, first a short pulse of forward current passes through the diode and then a fast-growing pulse of reverse voltage is applied. A resulting pulse of reverse current carries away injected holes and thereby forms a plasma front in the p' layer, which moves toward the p' N junction. When the hole concentration in the flow exceeds the dopant concentration in the p' layer, a space charge region arises in this layer, the resistivity of the diode increases sharply, and the current switches to a load connected parallel to the diode. Early results concerning an alternative configuration of the SOS diode are presented. Here, the diode was made by the rapid simultaneous diffusion of B and P from the opposite sides of a p-Si wafer to a depth of 60-80 μm. If a short pulse of forward current is passed through such a p + pn + structure and a pulse of reverse voltage is then applied, a plasma front arising in the p + region moves toward the p + p interface through the heavily doped (i.e., low-resistivity) p + region. Having crossed this interface, the front passes into a low-doped region, where the hole concentration in the flow becomes much higher than the dopant concentration and a space charge region causing the current to pass to the load forms at once. It is shown experimentally that, all other things being the same, the time of current breaking in the p-SOS-diode is roughly twice as short as in the conventional n-SOS-diode, switched currents are considerably lower, and the fabrication technique of p-SOS-diodes is much simpler. Ways of optimizing the design of the semiconductor structure of the p-SOS-diode to further raise the

  4. Entrance dose measurements for in-vivo diode dosimetry: Comparison of correction factors for two types of commercial silicon diode detectors.

    Science.gov (United States)

    Zhu, X R

    2000-01-01

    Silicon diode dosimeters have been used routinely for in-vivo dosimetry. Despite their popularity, an appropriate implementation of an in-vivo dosimetry program using diode detectors remains a challenge for clinical physicists. One common approach is to relate the diode readout to the entrance dose, that is, dose to the reference depth of maximum dose such as d(max) for the 10x10 cm(2) field. Various correction factors are needed in order to properly infer the entrance dose from the diode readout, depending on field sizes, target-to-surface distances (TSD), and accessories (such as wedges and compensate filters). In some clinical practices, however, no correction factor is used. In this case, a diode-dosimeter-based in-vivo dosimetry program may not serve the purpose effectively; that is, to provide an overall check of the dosimetry procedure. In this paper, we provide a formula to relate the diode readout to the entrance dose. Correction factors for TSD, field size, and wedges used in this formula are also clearly defined. Two types of commercial diode detectors, ISORAD (n-type) and the newly available QED (p-type) (Sun Nuclear Corporation), are studied. We compared correction factors for TSDs, field sizes, and wedges. Our results are consistent with the theory of radiation damage of silicon diodes. Radiation damage has been shown to be more serious for n-type than for p-type detectors. In general, both types of diode dosimeters require correction factors depending on beam energy, TSD, field size, and wedge. The magnitudes of corrections for QED (p-type) diodes are smaller than ISORAD detectors.

  5. Detection and dosimetry studies on the response of silicon diodes to an 241Am-Be source

    Science.gov (United States)

    Lotfi, Y.; Zaki Dizaji, H.; Abbasi Davani, F.

    2014-06-01

    Silicon diode detectors show potential for the development of an active personal dosimeter for neutron and photon radiation. Photons interact with the constituents of the diode detector and produce electrons. Fast neutrons interact with the constituents of the diode detector and converter, producing recoil nuclei and causing (n,α) and (n,p) reactions. These photon- and neutron-induced charged particles contribute to the response of diode detectors. In this work, a silicon pin diode was used as a detector to produce pulses created by photon and neutron. A polyethylene fast neutron converter was used as a recoil proton source in front of the detector. The total registered photon and neutron efficiency and the partial contributions of the efficiency, due to interactions with the diode and converter, were calculated. The results show that the efficiency of the converter-diode is a function of the incident photon and neutron energy. The optimized thicknesses of the converter for neutron detection and neutron dosimetry were found to be 1 mm and 0.1 mm respectively. The neutron records caused by the (n,α) and (n,p) reactions were negligible. The photon records were strongly dependent upon the energy and the depletion layer of the diode. The photons and neutrons efficiency of the diode-based dosimeter was calculated by the MCNPX code, and the results were in good agreement with experimental results for photons and neutrons from an 241Am-Be source.

  6. Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla [Dept. of Radiotherapy and Oncology, Center of Radiology, Univ. Hospital, Frankfurt/Main (Germany); Peter, Christiane [Dept. of Radiotherapy and Oncology, Center of Radiology, Univ. Hospital, Frankfurt/Main (Germany); Inst. for Medical Physics and Radiation Protection, Advanced Technical Coll. Giessen-Friedberg (Germany); Zink, Klemens [Inst. for Medical Physics and Radiation Protection, Advanced Technical Coll. Giessen-Friedberg (Germany)

    2009-08-15

    Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm{sup 3} thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm{sup 2} because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

  7. Control of Switching Characteristics of Silicon-based Semiconductor Diode Using High Energy Linear Accelerator

    Directory of Open Access Journals (Sweden)

    N. Harihara Krishnan

    2013-05-01

    Full Text Available This paper reports control of switching characteristics of silicon-based semiconductor diode using electron beam produced using linear accelerator. Conventionally, p-n junction chips of diode are exposed to gamma rays from a radioactive source or electron beam from a microtron, depending upon the required level of correction. High energy linear accelerators featuring simultaneous exposure of multiple chips are recent advancements in radiation technology. The paper presents the results of the radiation process using a 10 MeV linear accelerator as applied in industrial manufacturing of a high voltage diode (2600 V. The achieved values of reverse recovery time were found to be within the design limits. The suitability of the new process was verified by constructing the trade-off curve between the switching and conduction parameters of the diode for the complete range using large number of experimental samples. The paper summarizes the advantages of the new process over the conventional methods specifically with reference to industrial requirements. The developed process has been successfully implemented in semiconductor manufacturing.

  8. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    Science.gov (United States)

    Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

    2016-12-01

    The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at EC-0.31 eV and EC-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  9. Betavoltaic and photovoltaic energy conversion in three-dimensional macroporous silicon diodes

    Energy Technology Data Exchange (ETDEWEB)

    Clarkson, J.P. [Materials Science Program, University of Rochester, Rochester, New York 14627 (United States); Sun, W. [Dept. of Biomedical Engineering, University of Rochester, Rochester, New York 14627 (United States); Hirschman, K.D. [Microelectronic Engineering Dept., Rochester Institute of Technology, Rochester, NY 14623 (United States); Gadeken, L.L. [BetaBatt, Inc., 12819 Westleigh Drive, Houston, Texas 77077 (United States); Fauchet, P.M. [Dept. of Electrical and Computer Engineering, University of Rochester, Rochester, NY 14627 (United States)

    2007-05-15

    A three-dimensional p-n diode structure is presented for the generation of energy via photovoltaic and betavoltaic modes of operation. Macroporous Silicon (MPS) has a large degree of internal surface area and its vertically oriented pores, which extend deep into the bulk of the Si substrate, allow for the creation of three-dimensional structures. In this device the MPS will not only serve as a means for creating 3D diode structures, it will also serve as a host matrix for a tritium isotope which emits energetic beta particles. By varying electrochemical etching conditions and using a prepatterning technique, 1.1 {mu}m diameter pores with a spacing of 2.5 {mu}m were achieved. The p-n junction was created using a rapid thermal process (RTP) which relies on the diffusion from an n-type solid source into the MPS. To ensure the quality of the diode structure, devices were tested using a light source which resulted in a photovoltaic response. Finally, betavoltaic operation was demonstrated by exposing devices to a tritium gas source. The average energy conversion efficiency of the first generation 3D diode was one order of magnitude higher than that of a similar planar device. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes

    CERN Document Server

    Borrello, L; Da Rold, M; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Militaru, O; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

    1998-01-01

    The paper describes the role of the n+ edge implants in the breakdown process of p+ on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimisation of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n-wells along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence 1.8*10^15 n/cm2.

  11. X-ray detection with a linear silicon photo-diode array

    Energy Technology Data Exchange (ETDEWEB)

    Zutavern, F.; Aton, T.; Franck, C; Schnatterly, S.

    1982-01-01

    A phosphor-coated silicon photo-diode array has been used as the detector in an ultra-high vacuum, soft X-ray emission spectrograph. In developing this detection system, measurements on a bare array, a phosphor coated array, and a phosphor coated photo-multiplier tube were made at the Synchrotron Ultraviolet Radiation Facility (SURF), NBS, Washington, D.C. The results of these measurements and the performance of this detection system will be discussed. These results will then be extrapolated into the X-ray energy range used by crystallographers.

  12. The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery.

    Science.gov (United States)

    Lei, Yisong; Yang, Yuqing; Liu, Yebing; Li, Hao; Wang, Guanquan; Hu, Rui; Xiong, Xiaoling; Luo, Shunzhong

    2014-08-01

    A tritium beta-voltaic battery using a crystalline silicon convertor composed of (100)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field.

  13. Single crystal growth of Sr{sub 2}TiMnO{sub 6} by optical floating zone technique

    Energy Technology Data Exchange (ETDEWEB)

    Murugesan, G.; Kalainathan, S. [Centre for Crystal Growth, School of Advanced Sciences, VIT University, Vellore 632 014, Tamil Nadu (India); Nithya, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamil Nadu (India); Das, Amitabh [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai – 400085 (India)

    2016-05-23

    Single crystals of Sr{sub 2}TiMnO{sub 6} were grown by optical floating zone technique. Powder X-ray diffraction studies confirmed the single phase nature of the grown crystal. Laue diffraction studies proved the quality of the grown crystal. Neutron diffraction showed no magnetic ordering down to 6 K. Impedance studies showed temperature dependant relaxation which is due to the presence of oxygen vacancies in the grown crystal.

  14. On the onset of multi-wave patterns in laterally heated floating zones for slightly supercritical conditions

    Science.gov (United States)

    Lappa, Marcello

    2016-12-01

    This analysis follows and integrates the line of inquiry started in past author's works [M. Lappa, "Three-dimensional numerical simulation of Marangoni flow instabilities in floating zones laterally heated by an equatorial ring," Phys. Fluids 15(3), 776-789 (2003) and "Combined effect of volume and gravity on the three-dimensional flow instability in non-cylindrical floating zones heated by an equatorial ring," ibid. 16(2), 331-343 (2004)] about the typical instabilities of the Marangoni flow and associated hierarchy of bifurcations in laterally heated floating zones with various shapes and aspect ratios. The main motivation for re-examining this kind of problems, which have attracted so much attention over the last twenty years, is the recent discovery [M. Kudo et al., "Transition of thermocapillary convection in a full-zone liquid bridge," Trans. JSME (in Japanese) 80(812), TEP0095 (2014)] of a chaotic state in the region of the space of parameters where on the basis of existing theories and earlier results for the classical liquid-bridge problem with organic fluids, the flow should be relatively regular in time and with a simple structure in space. Axisymmetric computations are used to obtain the steady basic state, and then the Navier Stokes equations are solved in their complete, three-dimensional, time-dependent, and non-linear formulation to investigate the evolution of azimuthal disturbances. It is shown that the "apparent" doubling or quadrupling of the azimuthal wavenumber in the equatorial plane, previously reported for the case of floating zones of liquid metals, is replaced for high-Prandtl-number liquids by the complex interaction of disturbances with distinct spatial and temporal scales. These disturbances become critical at relatively comparable values of the Marangoni number. The unexpected multiplicity of waveforms and competition of spatial modes are explained according to the increased complexity of the considered system in terms of flow

  15. High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

    CERN Document Server

    Ma, Jian; Yu, Zongfu; Jiang, Xiao; Huo, Yijie; Zang, Kai; Zhang, Jun; Harris, James S; Jin, Ge; Zhang, Qiang; Pan, Jian-Wei

    2015-01-01

    Silicon single-photon avalanche diode (SPAD) is a core device for single-photon detection in the visible and the near-infrared range, and widely used in many applications. However, due to limits of the structure design and device fabrication for current silicon SPADs, the key parameters of detection befficiency and timing jitter are often forced to compromise. Here, we propose a nanostructured silicon SPAD, which achieves high detection efficiency with excellent timing jitter simultaneously over a broad spectral range. The optical and electric simulations show significant performance enhancement compared with conventional silicon SPAD devices. This nanostructured devices can be easily fabricated and thus well suited for practical applications.

  16. Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes

    CERN Document Server

    Verzellesi, G; Bosisio, L; Dalla Betta, Gian Franco; Pignatel, Giogrio Umberto

    2002-01-01

    We show that the accuracy of the gated diode method for measuring bulk generation lifetime and surface generation velocity in high resistivity silicon depends critically on the gate length of the test device, as a result of nonidealities affecting the gated diode operation. Minimization of the surface generation velocity measurement error requires the gate length to be suitably decreased, while long gate length structures are needed for accurate bulk generation lifetime extraction.

  17. CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

    CERN Document Server

    Hoedlmoser, H; Köhler, M; Nordlund, H

    2007-01-01

    Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

  18. Measurement of carbon ion microdosimetric distributions with ultrathin 3D silicon diodes

    Science.gov (United States)

    Gómez, F.; Fleta, C.; Esteban, S.; Quirion, D.; Pellegrini, G.; Lozano, M.; Prezado, Y.; Dos Santos, M.; Guardiola, C.; Montarou, G.; Prieto-Pena, J.; Pardo-Montero, Juan

    2016-06-01

    The commissioning of an ion beam for hadrontherapy requires the evaluation of the biologically weighted effective dose that results from the microdosimetric properties of the therapy beam. The spectra of the energy imparted at cellular and sub-cellular scales are fundamental to the determination of the biological effect of the beam. These magnitudes are related to the microdosimetric distributions of the ion beam at different points along the beam path. This work is dedicated to the measurement of microdosimetric spectra at several depths in the central axis of a 12C beam with an energy of 94.98 AMeV using a novel 3D ultrathin silicon diode detector. Data is compared with Monte Carlo calculations providing an excellent agreement (deviations are less than 2% for the most probable lineal energy value) up to the Bragg peak. The results show the feasibility to determine with high precision the lineal energy transfer spectrum of a hadrontherapy beam with these silicon devices.

  19. COTS Silicon diodes as radiation detectores in proton and heavy charged particle radiotherapy

    DEFF Research Database (Denmark)

    Kaiser, Franz-Joachim; Bassler, Niels; Jäkel, Oliver

    resolution is needed. The detector system consists of a silicon photodiode with a retail price less than 1 Euro encapsulated in a polyoxymethylene housing, connected to a dosimetry elec- trometer. In MV photons beams the output factors, the temperature behavior and the noise properties are similar...... chambers of the same volume. In this paper, a detector based on a low-cost BPW-34 photodiode is developed and charac- terized for the use in proton and carbon ion beams. The BPW-34 photodiode has a well defined sensitive volume of 2.7 × 2.7 mm2 × 10 μm which is suitable in situations where a high spatial......, 3] This low-cost inhouse made detectors based on a commercially available silicon diode was suc- cessfully tested at the Heidelberg Ion Beam Therapy Center for the characterization carbon ion beams....

  20. Thermal stability of boron nitride/silicon p-n heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Teii, Kungen, E-mail: teii@asem.kyushu-u.ac.jp; Mizusako, Yusei; Hori, Takuro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Matsumoto, Seiichiro [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2015-10-21

    Heterojunctions of p-type cubic boron nitride (cBN) and n-type silicon with sp{sup 2}-bonded BN (sp{sup 2}BN) interlayers are fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition, and their rectification properties are studied at temperatures up to 573 K. The rectification ratio is increased up to the order of 10{sup 5} at room temperature by optimizing the thickness of the sp{sup 2}BN interlayer and the cBN fraction for suppressing the reverse leakage current. A highly rectifying p-type cBN/thick sp{sup 2}BN/n-type silicon junction diode shows irreversible rectification properties mainly characterized by a marked decrease in reverse current by an order of magnitude in an initial temperature ramp/down cycle. This irreversible behavior is much more reduced by conducting the cycle twice or more. The temperature-dependent properties confirm an overall increase in effective barrier heights for carrier injection and conduction by biasing at high temperatures, which consequently increases the thermal stability of the diode performance.

  1. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  2. Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation

    Science.gov (United States)

    Pastuović, Željko; Vittone, Ettore; Capan, Ivana; Jakšić, Milko

    2011-02-01

    We present ion beam induced charge (IBIC) measurements of the critical displacement damage dose Dd values and modeling of the probability of divacancy trap production in p+-n-n+ silicon diodes exposed to megaelectron volt energy ion beam irradiation. The normalized induced charge (Q0/Q) measured by He ion probe in tested silicon diodes irradiated by focused He, Li, O, and Cl ion beams with energies of about 0.3 MeV/u increases linearly with Dd according to the modified radiation damage function and nonionizing energy loss (NIEL) theory. A simple IBIC model based on Gunn theorem showed clear dependence of the induced charge Q and corresponding equivalent damage factor Ked value on both a depth profile of charge created by ionizing particle (probe) and a depth distribution of stable defects created from primary defects produced by damaging ions. The average probability of the divacancy production (defined as the ratio of the final electrical active defect quantity and primary ion induced vacancy quantity for each impinging ion) of 0.18 (18%) was calculated by the IBIC modeling for all damaging ions.

  3. Magnetite/hematite core/shell fibres grown by laser floating zone method

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, N.M., E-mail: nmferreira@ua.pt [i3N, Dep. Fisica, Universidade de Aveiro (Portugal); CICECO, Dep. Cerâmica e do Vidro, Universidade de Aveiro (Portugal); Kovalevsky, A. [CICECO, Dep. Cerâmica e do Vidro, Universidade de Aveiro (Portugal); Valente, M.A.; Costa, F.M. [i3N, Dep. Fisica, Universidade de Aveiro (Portugal); Frade, J. [CICECO, Dep. Cerâmica e do Vidro, Universidade de Aveiro (Portugal)

    2013-08-01

    Magnetite (Fe{sub 3}O{sub 4}) is a very important material due to its unique physical and chemical properties. However, the low redox stability and tendency towards oxidation impose certain limitations on the conditions, where Fe{sub 3}O{sub 4} can be successfully used. A possibility to control and prevent oxidation of Fe{sub 3}O{sub 4} thus represents an important challenge for materials engineering. In the present work, the laser floating zone (LFZ) method was employed to produce Fe{sub 3}O{sub 4} fibres using hematite (Fe{sub 2}O{sub 3}) as a precursor material. Different growth conditions, namely pulling rate in the range 10–400 mm/h, were studied. The prepared fibres showed a core/shell structure, where the core is isolated by a shell of Fe{sub 2}O{sub 3}. The pulling rate was found to be a crucial growth parameter to control the crystalline nature of the fibres, particularly, the thickness of the shell. Increasing the pulling rate favours the formation Fe{sub 2}O{sub 3} phase and, thus, decreases the width of shell isolating phase. X-ray diffraction (XRD) analysis was performed to identify the presence of Fe{sub 3}O{sub 4} and Fe{sub 2}O{sub 3} phases. The morphology and phase distribution of the grown fibres were analyzed by optical microscopy. Electrical properties of the fibres were measured at various temperatures, to understand the influence of pulling rate on the fibres shell. Vibrating sample magnetometer (VSM) measurements were used to study the dc magnetic susceptibility and hysteresis curves behaviour of Fe{sub 3}O{sub 4} phase in the temperature range 5–300 K.

  4. Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

    Institute of Scientific and Technical Information of China (English)

    李宏建; 彭景翠; 瞿述; 颜永红; 许雪梅; 赵楚军

    2002-01-01

    By using n-butylamine as a carbon resource, carbon film is deposited on the p-n porous silicon (PS) surface with aradio-frequency glow discharge plasma system. Raman spectra and infrared reflection (IR) spectra of the carbonfilms indicate that there are amine-group and hydrogen atoms therein. The IR spectra of the passivated PSsamples exhibit that the PS surfaces are mainly covered with Si-C, Si-N and Si-O bonds. Electroluminescence(EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of theEL peak occurs compared with the diodes without treatment. Both of these are stable while the passivateddiodes are exposed to the air indoors. The I-V characteristics reveal that the passivated diodes have a smallerseries resistance and a lower onset voltage. The influence of the carbon film passivation on EL properties of PShas also been discussed. The results have proven that carbon film passivation is a good way to enhance the PSluminescent intensity and stability.

  5. Pulse Shape Characterization of Silicon Diodes for HGCal with data from Beam Test at CERN

    CERN Document Server

    De Silva, Malinda

    2016-01-01

    The High Luminosity phase of the LHC (starting operation in 2025) will provide unprecedented instantaneous and integrated luminosity, with 25 ns bunch crossing intervals and up to 140 pileup events. A challenge is to provide excellent physics performance in such a harsh environment to fully exploit the HL-LHC potentialities and explore new physics frontiers. In this context, the High Granularity Calorimeter is the detector designed to provide electromagnetic and hadronic energy coverage and reconstruction in the forward direction of the upgraded CMS. In April 2016 and June 2016, a set of 36 diodes were tested in order to understand various characteristics of its performance, in order to use them in the upgraded HG Calorimeter. Here, the silicon diodes were mounted onto a test bench at CERN’s beam test area and exposed to electron showers. Data received from these diodes were acquired and analysed separately. The objective of this report is to show the variation of Time Rise, Time Over Threshold with various...

  6. Effect of non-uniform magnetic field on crystal growth by floating-Zone method in microgravity

    Institute of Scientific and Technical Information of China (English)

    李凯; 胡文瑞

    2001-01-01

    The magnetic damping effect of the non-uniform magnetic field on the floating-zone crystal growth process in microgravity is studied by numerical simulation. The results show that the non-uni-form magnetic field with designed configuration can effectively reduce the flow near the free surface and then in the melt zone. At the same time, the designed magnetic field can improve the impurity concen-tration non-uniformity along the solidification interface. The primary principles of the magnetic field con-figuration design are also discussed.

  7. Fluid mechanics and mass transfer in melt crystal growth: Analysis of the floating zone and vertical Bridgman processes

    Science.gov (United States)

    Brown, R. A.

    1986-01-01

    This research program focuses on analysis of the transport mechanisms in solidification processes, especially one of interest to the Microgravity Sciences and Applications Program of NASA. Research during the last year has focused on analysis of the dynamics of the floating zone process for growth of small-scale crystals, on studies of the effect of applied magnetic fields on convection and solute segregation in directional solidification, and on the dynamics of microscopic cell formation in two-dimensional solidification of binary alloys. Significant findings are given.

  8. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer

    Institute of Scientific and Technical Information of China (English)

    H0 Chi-Hon; LIAO Chen-Nan; CHIEN Feng-Tso; TSAI Yao-Tsung

    2009-01-01

    This work presents the optimal design of a silicon-on-insulator (SOI) diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer (LDBL) between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm. The LDBL shielding layer improved the breakdown voltage.

  9. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  10. Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

    Science.gov (United States)

    Zhang, Li-Zhong; Wang, Yuan; He, Yan-Dong

    2016-12-01

    The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR. Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

  11. Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes

    CERN Document Server

    Boscardin, Maurizio; Bruzzi, Mara; Candelori, Andrea; Focardi, Ettore; Khomenkov, Volodymyr P; Piemonte, Claudio; Ronchin, S; Tosi, C; Zorzi, N

    2005-01-01

    Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 50- mu m and 100- mu m thick membranes and tested, showing a low leakage current (of 300 nA/cm/sup 3/) and a very low depletion voltage (in the order of 1 V for the 50 mu m membrane) before irradiation. Radiation damage tests have been performed with 58 MeV lithium (Li) ions up to the fluence of 10/sup 14/ Li/cm/sup 2/ in order to determine the depletion voltage and leakage current density increase after irradiation. Charge collection efficiency tests carried out with a beta /...

  12. Dead layer on silicon p–i–n diode charged-particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Wall, B.L., E-mail: wallbl@uw.edu [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Amsbaugh, J.F. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Beglarian, A.; Bergmann, T. [Institute for Data Processing and Electronics, Karlsruhe Institute of Technology, Karlsruhe (Germany); Bichsel, H.C.; Bodine, L.I.; Boyd, N.M.; Burritt, T.H. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Chaoui, Z. [Laboratory of Optoelectronics and Devices, Faculty of Science, University of Setif (Algeria); Corona, T.J. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Doe, P.J.; Enomoto, S. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Harms, F. [Institute for Nuclear Physics, Karlsruhe Institute of Technology, Karlsruhe (Germany); Harper, G.C. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Howe, M.A. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC (United States); Martin, E.L.; Parno, D.S.; Peterson, D.A. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Petzold, L. [Institute for Data Processing and Electronics, Karlsruhe Institute of Technology, Karlsruhe (Germany); Renschler, P. [Institute for Experimental Nuclear Physics, Karlsruhe Institute of Technology, Karlsruhe (Germany); and others

    2014-04-21

    Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p–i–n diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the “dead” layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

  13. Dead layer on silicon p-i-n diode charged-particle detectors

    CERN Document Server

    Wall, B L; Beglarian, A; Bergmann, T; Bichsel, H C; Bodine, L I; Boyd, N M; Burritt, T H; Chaoui, Z; Corona, T J; Doeg, P J; Enomoto, S; Harms, F; Harper, G C; Howe, M A; Martin, E L; Parno, D S; Peterson, D A; Petzold, L; Renschler, P; Robertson, R G H; Schwarz, J; Steidl, M; Van Wechel, T D; VanDevender, B A; Wüstling, S; Wierman, K J; Wilkerson, J F

    2013-01-01

    Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon \\textit{p-i-n} diode used in the KATRIN neutrino-mass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by diffusion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer fr...

  14. Dead layer on silicon p-i-n diode charged-particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Wall, B. L.; Amsbaugh, John F.; Beglarian, A.; Bergmann, T.; Bichsel, H. C.; Bodine, L. I.; Boyd, N. M.; Burritt, Tom H.; Chaoui, Z.; Corona, T. J.; Doe, Peter J.; Enomoto, S.; Harms, F.; Harper, Gregory; Howe, M. A.; Martin, E. L.; Parno, D. S.; Peterson, David; Petzold, Linda; Renschler, R.; Robertson, R. G. H.; Schwarz, J.; Steidl, M.; Van Wechel, T. D.; VanDevender, Brent A.; Wustling, S.; Wierman, K. J.; Wilkerson, J. F.

    2014-04-21

    Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra to the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.

  15. Production of cheaper silicon polycrystalline diodes and photovoltaic cells by LPCVD

    Energy Technology Data Exchange (ETDEWEB)

    Laghla, Y.; Scheid, E. [Centre National de la Recherche Scientifique (CNRS), 31 - Toulouse (France). Laboratoire d`Analyse et d`Architecture des Systemes; Vergnes, H.; Couderc, J.P. [ENSIGC, 31 - Toulouse (France)

    1998-12-01

    In a previous paper, a cheap procedure and equipment to elaborate thin silicon polycrystalline films was presented. This work included also the design of a small scale pilot plant, representative of an industrial reactor and particularly useful to perform rapid and less expensive experiments. This new paper will first recall the organization of the new reactors used throughout this work and will summarize their advantages. It will, then, mainly be concentrated on the analysis of the optical and electrical properties of thin layers deposited using this technique. Combination of optical properties and electrical properties assessments allow us to determine the thickness of the layers which will be necessary to build efficient photovoltaic solar cells. As a first check of electrical properties, a series of diodes has been produced and tested in darkness. Results obtained so far look promising and encourage to go further. Let us recall that numerical simulation has strongly suggested that the new technology of reactor, which has been tested with silicon wafers 0.1 m in diameter for a total area of 1.5 m{sup 2} by run, certainly be extrapolated up to sizes necessary to treat disks 0.5 m in diameter, or square plates 0.5 x 0.5 m, for a total of 50 m{sup 2} by run. (authors) 9 refs.

  16. A review of high-efficiency silicon solar cells

    Science.gov (United States)

    Rohatgi, A.

    1986-01-01

    Various parameters that affect solar cell efficiency were discussed. It is not understood why solar cells produced from less expensive Czochralski (Cz) silicon are less efficient than cells fabricated from more expensive float-zone (Fz) silicon. Performance characteristics were presented for recently produced, high-efficient solar cells fabricated by Westinghouse Electric Corp., Spire Corp., University of New South Wales, and Stanford University.

  17. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Science.gov (United States)

    Savanier, Marc; Kumar, Ranjeet; Mookherjea, Shayan

    2015-09-01

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  18. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  19. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.

    Science.gov (United States)

    Chuang, Linus C; Sedgwick, Forrest G; Chen, Roger; Ko, Wai Son; Moewe, Michael; Ng, Kar Wei; Tran, Thai-Truong D; Chang-Hasnain, Connie

    2011-02-09

    Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.

  20. Growth of high-quality hexagonal ErMnO3 single crystals by the pressurized floating-zone method

    Science.gov (United States)

    Yan, Z.; Meier, D.; Schaab, J.; Ramesh, R.; Samulon, E.; Bourret, E.

    2015-01-01

    Hexagonal manganites are among the most intensively studied multiferroics, exhibit unusual geometrically driven ferroelectricity and magnetoelectric couplings, and form domains and domain walls with intriguing functional properties. In order to study these electronic correlation phenomena and develop a comprehensive understanding about the underlying physics, the availability of high-quality single-crystals is crucial. In particular, different members of the RMnO3 (R=Sc, Y, In, Dy to Lu) family require different growth condition in order to achieve stoichiometric single-phase crystals. Here, we report on the growth of high-quality ErMnO3 single crystals with dimensions of 5 mm in diameter and up to 60 mm in length using the pressurized floating-zone technique. We present Laue diffraction, piezoresponse force microscopy, and conductive atomic force microscopy data, reflecting the quality of our single crystals regarding the structure, as well as electronic properties on the level of domains and domain walls.

  1. Preparation of a Ag-doped Bi-Sr-Ca-Cu-O bulk sample by the floating-zone method

    Science.gov (United States)

    Kubo, Yukio; Michishita, Kazuo; Shimizu, Noriyuki; Higashida, Yutaka; Yokoyama, Hisanori

    1989-11-01

    Bulk samples with nominal composition of Bi2Sr2CaCu2O(y) doped with 0, 10 and 20 wt pct Ag were prepared by the floating-zone method at growth rates of 2 mm/h and 5 mm/h. Ag-doping seems to slightly enhance J(c) while annealing is very effective for J(c) enhancement. From preliminary ac susceptibility measurements, the J(c) enhancement by annealing is considered to be due to improvement of the weak link between superconducting grains. The 10 percent Ag-doped sample grown at 2 mm/h possessed J(c) of 5360 A/sq cm at 77 K under zero magnetic field after annealing.

  2. Preparation of high J(c) Bi-Sr-Ca-Cu-O bulk sample by floating zone method

    Science.gov (United States)

    Kubo, Yukio; Michishita, Kazuo; Higashida, Yutaka; Mizuno, Masatoshi; Yokoyama, Hisanori

    1989-04-01

    Bi-Sr-Ca-Cu-O bulk samples with three different nominal compositions of Bi2Sr2CaCu2O(y) Bi2Sr2Ca2Cu3O(y) and Bi(0.7)Pb(0.3)SrCaCu(1.8)O(y) were prepared by the floating zone method at growth rates ranging from 2 mm/h to 70 mm/h. The sample grown at 2 mm/h with the nominal composition of Bi2Sr2CaCu2O(y) possessed high density, highly aligned morphology, and a transport critical current density higher than 1490 A/sq cm at 77 K under a zero magnetic field without any postannealing.

  3. Flux-free growth of large superconducting crystal of FeSe by traveling-solvent floating-zone technique

    Science.gov (United States)

    Ma, Mingwei; Yuan, Dongna; Wu, Yue; Zhou, Huaxue; Dong, Xiaoli; Zhou, Fang

    2014-12-01

    A flux-free solution to the growth of large and composition homogeneous superconducting FeSe crystal is reported for the first time, which is based on the traveling-solvent floating-zone technique. The size of the crystal samples prepared by this approach is up to 15 × 6 × 2 mm3, being far bigger than previously reported in all dimensions, and the main phase of the crystals is of a single preferred orientation along the tetragonal (101) plane. X-ray diffraction analysis identifies the main phase to be the superconducting tetragonal β-FeSe. The superconducting transition temperature (TC) is determined to be 9.4 K by AC magnetic susceptibility and electronic transport measurements. A nearly perfect diamagnetic shielding of -97% is observed, indicating a bulk superconductivity in the crystal sample.

  4. Growth of large size lithium niobate single crystals of high quality by tilting-mirror-type floating zone method

    Energy Technology Data Exchange (ETDEWEB)

    Sarker, Abdur Razzaque, E-mail: razzaque_ru2000@yahoo.com [Department of Physics, University of Rajshahi (Bangladesh)

    2016-05-15

    Large size high quality LiNbO{sub 3} single crystals were grown successfully by tilting-mirror-type floating zone (TMFZ) technique. The grown crystals were characterized by X-ray diffraction, etch pits density measurement, Impedance analysis, Vibrating sample magnetometry (VSM) and UV-Visible spectrometry. The effect of mirror tilting during growth on the structural, electrical, optical properties and defect density of the LiNbO{sub 3} crystals were investigated. It was found that the defect density in the crystals reduced for tilting the mirror in the TMFZ method. The chemical analysis revealed that the grown crystals were of high quality with uniform composition. The single crystals grown by TMFZ method contains no low-angle grain boundaries, indicating that they can be used for high efficiency optoelectronic devices. (author)

  5. Determination of the dominant current mechanisms in the MIS tunnel diode of MIS inversion-layer silicon solar cells. Paper

    Energy Technology Data Exchange (ETDEWEB)

    Neuhaus, H.; Kuhlmann, B.; Meyer, R.; Auer, R.; Aberle, A.G.; Hezel, R. [Institut fuer Solarenergieforschung Hameln/Emmerthal GmbH, Hannover (Germany); Metz, A.

    1998-07-01

    In order to determine the dominant current mechanisms in Al/SiO{sub x}/p-Si MIS tunnel diodes, we measured forward-biased dark I-V curves of such devices in the temperature range 100 - 380 K. Simulations of the I-V curves of these minority-carrier MIS tunnel diodes were performed using an analytical model. Good agreement between measured and simulated curves was obtained, enabling the separation of the dominant current mechanisms in these devices. If the tunnel oxide is treated with a CsCl solution prior to the Al evaporation or if a post-metallisation anneal (''alneal'') is performed, the saturation current density j{sub o} and the series resistance R{sub s} of the MIS tunnel diodes decrease. Simulations of experimental I-V curves of Al/SiO{sub x}/p-Si MIS tunnel diodes with and without CsCl treatment show that the improved electronic performance of the latter results from an increase in the surface band bending {psi}{sub s} (''field-effect passivation'') and a decrease in the density of Si-SiO{sub x} interface states. In MIS inversion-layer silicon solar cells, the CsCl treatment of the Al/SiO{sub x}/p-Si MIS tunnel diode improves both the open-circuit voltage V{sub oc} and the fill factor FF.

  6. Microstructure and mechanical properties control of γ-TiAl(Nb, Cr, Zr) intermetallic alloy by induction float zone processing

    Energy Technology Data Exchange (ETDEWEB)

    Kartavykh, A.V., E-mail: karta@korolev-net.ru [National University of Science and Technology “MISIS”, Leninsky pr. 4, 119049 Moscow (Russian Federation); Technological Institute for Superhard and Novel Carbon Materials (TISNCM), 7a Centralnaya str., 142190 Troitsk, Moscow (Russian Federation); Asnis, E.A.; Piskun, N.V.; Statkevich, I.I. [The E.O. Paton Electric Welding Institute, 11 Bozhenko str., 03680 Kyiv (Ukraine); Gorshenkov, M.V. [National University of Science and Technology “MISIS”, Leninsky pr. 4, 119049 Moscow (Russian Federation)

    2015-09-15

    Highlights: • Induction float zoning of as-synthesized Ti–44Al–5Nb–3Cr–1.5Zr (at.%) alloy. • Special ordered phase microstructure engineering by FZ conditions. • Refining effect by FZ with respect to dissolved oxygen. • Comparative compression testing. • Drastic enhancement of mechanical properties. - Abstract: Advanced Ti–44Al–5Nb–3Cr–1.5Zr (at.%) structural alloy was previously synthesized by the electron beam semi-continuous casting technique. The rod-shaped blanks of raw alloy with irregular coarse microstructure have been directionally upward re-solidified by the vertical induction float zone (FZ) technique in argon flow. FZ processing led to specific duplex microstructure creation consisting of (γ + α{sub 2}) lamellar colonies and γ grains with minor intergranular fraction of B2 phase. The grain size, interlamellar spacing and ordered axial alignment of lamellae along the applied thermal gradient were controlled by FZ conditions. Structure, phase and elemental composition were analyzed with XRD, SEM, EBSD and hot gas extraction techniques. Mechanical properties were comparatively examined by uniaxial compression testing at ambient temperature. It was shown that (1) fine submicron interlamellar spacing; (2) ordered lamellae alignment; (3) relative volumetric ratio of (γ + α{sub 2})/γ/B2 structural-phase constituents and (4) dissolved oxygen content are the key parameters for controlling the compressive properties of FZ-alloy. Both yield strength, and ultimate compressive strength enhance drastically as a result of the FZ processing, being in correlation with the duplex microstructure development and refining of the material from oxygen.

  7. Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

    Science.gov (United States)

    Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

    2017-06-01

    N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

  8. Graphene/Silicon heterojunction Schottky diode for vapors sensing using impedance spectroscopy.

    Science.gov (United States)

    Fattah, Ali; Khatami, Saeid; Mayorga-Martinez, Carmen C; Medina-Sánchez, Mariana; Baptista-Pires, Luis; Merkoçi, Arben

    2014-10-29

    A graphene(G)/Silicon(Si) heterojunction Schottky diode and a simple method that evaluates its electrical response to different chemical vapors using electrochemical impedance spectroscopy (EIS) are implemented. To study the impedance response of the device of a given vapor, relative impedance change (RIC) as a function of the frequency is evaluated. The minimum value of RIC for different vapors corresponds to different frequency values (18.7, 12.9 and 10.7 KHz for chloroform, phenol, and methanol vapors respectively). The impedance responses to phenol, beside other gases used as model analytes for different vapor concentrations are studied. The equivalent circuit of the device is obtained and simplified, using data fitting from the extracted values of resistances and capacitances. The resistance corresponding to interphase G/Si is used as a parameter to compare the performance of this device upon different phenol concentrations and a high reproducibility with a 4.4% relative standard deviation is obtained. The efficiency of the device fabrication, its selectivity, reproducibility and easy measurement mode using EIS makes the developed system an interesting alternative for gases detection for environmental monitoring and other industrial applications.

  9. A view on progress of silicon single-photon avalanche diodes and quenching circuits

    Science.gov (United States)

    Cova, Sergio; Ghioni, Massimo; Zappa, Franco; Rech, Ivan; Gulinatti, Angelo

    2006-10-01

    Silicon Single-Photon Avalanche-Diodes (SPAD) are nowadays considered a solid-state alternative to Photomultiplier Tubes (PMT) in single photon counting (SPC) and time-correlated single photon-counting (TCSPC) over the visible spectral range up to 1 micron wavelength. SPADs implemented in planar epitaxial technology compatible with CMOS circuits offer the typical advantages of microelectronic devices (small size, ruggedness, low voltage and low power, etc.). Furthermore, they have inherently higher photon detection efficiency, since they do not rely on electron emission in vacuum from a photocathode as PMT, but instead on the internal photoelectric effect. However, PMTs offer much wider sensitive area, which greatly simplifies the design of optical systems; they provide position-sensitive photon detection and imaging capability; they attain remarkable performance at high counting rate and offer picosecond timing resolution with Micro-Channel Plate (MCP) models. In order to make SPADs more competitive in a broader range of SPC and TCPC applications it is necessary to face both semiconductor technology issues and circuit design issues, which will be here dealt with. Technology issues will be discussed in the context of two possible approaches: employing a standard industrial high-voltage compatible CMOS technology or developing a dedicated CMOS-compatible technology. Circuit design issues will be discussed taking into account problems arising from conflicting requirements set by various required features, such as fast and efficient avalanche quenching and reset, high resolution photon timing, etc.

  10. Development of silicon single-photon avalanche diode at Voxtel Inc.

    Science.gov (United States)

    Dhulla, Vinit; Miller, Drake; Mitaru-Berceanu, Dumitru; Kogan, Grigory

    2016-05-01

    In this paper we present the results of electrical and optical characterization of silicon single-photon avalanche diode (SPAD) development at Voxel Inc. Measurements are made on a 40 x 40 SPAD array test chip with column readout, inpixel integrated active quenching circuit, and pixel enable/disable circuit and ability to control dead time from 37 ns to 1.5 μs. The pixel pitch is 35 micrometers and includes three different SPADs with active-area diameters of 8 micrometers, 10 micrometers, and 14 micrometers. The realized SPADs have a breakdown voltage of 22.5 V with peak-to-peak variation of less than 36 mV across the array. At room temperature, with 10% over-bias the DCR is only 0.22 Hz/μm2. The SPADs have a sensitive range of 400 - 900 nm, with a peak photon-detection probability of 23% at 500 nm. After-pulsing and crosstalk are within the noise fluctuation of the SPAD and are not significant.

  11. Low-leakage diode-triggered silicon controlled rectifier for electrostatic discharge protection in 0.18-μm CMOS process

    Institute of Scientific and Technical Information of China (English)

    Xiao-yang DU; Shu-rong DONG; Yan HAN; Ming-xu HUO; Da-hai HUANG

    2009-01-01

    A diode-triggered silicon controlled rectifier (DTSCR) is being developed as an electrostatic discharge (ESD) protection device for low voltage applications. However, DTSCR leaks high current during normal operation due to the Darlington effect of the triggering-assist diode string. In this study, two types of diode string triggered SCRs are designed for low leakage consideration; the modified diode string and composite polysilicon diode string triggered SCRs (MDTSCR & PDTSCR). Compared with the conventional DTSCR (CDTSCR), the MDTSCR has a much lower substrate leakage current with a relatively large silicon cost, and the PDTSCR has a much lower substrate leakage current with similar area and shows good leakage performance at a high temperature. Other DTSCR ESD properties are also investigated, especially regarding their layout, triggering voltage and failure current.

  12. Particle detectors made of high-resistivity Czochralski silicon

    CERN Document Server

    Härkönen, J; Ivanov, A; Li, Z; Luukka, Panja; Pirojenko, A; Riihimaki, I; Tuominen, E; Tuovinen, E; Verbitskaya, E; Virtanen, A

    2005-01-01

    We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 Omega cm and 1.9 kOmega cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, gamma-rays, lithium ions and electrons. Cz-Si was found to be more radiation hard than standard Float Zone silicon (Fz-Si) or oxygenated Fz-Si. When irradiated with protons, the full depletion voltage in Cz-Si has not exceeded its initial value of 300 V even after the fluence of 5 multiplied by 10**1**4 cm**-**2 1-MeV eq. n cm **-**2 that equals more than 30 years operation of...

  13. Comparative study of Si diodes for gamma radiation dosimetry; Estudo comparativo das respostas de diodos de Si para dosimetria de radiacao gama

    Energy Technology Data Exchange (ETDEWEB)

    Pascoalino, Kelly Cristina da Silva

    2010-07-01

    In this work it is presented the comparative study of Si diodes response for gamma radiation dosimetry. The diodes investigated, grown by float zone (Fz) and magnetic Czochralski (MCz) techniques, were processed at the Physics Institute of Helsinki University in the framework of the research and development of rad-hard silicon devices. To study the dosimetric response of these diodes they were connected in the photovoltaic mode to the input of a digital electrometer to measure the photocurrent signal due to the incidence of gamma-rays from a {sup 60}Co source (Gammacell 220). The dosimetric parameter utilized to study the response of these devices was the charge, obtained trough the integration of the current signals, as a function of the absorbed dose. Studies of the influence of the pre-irradiation procedures on both sensitivity and stability of these diodes showed that the sensitivity decreased with the total absorbed dose but after a preirradiation of about 873 kGy they became more stable. Radiation damage effects eventually produced in the devices were monitored trough dynamic current and capacitance measurements after each irradiation step. Both samples also exhibited good response reproducibility, 2,21% (Fz) and 2,94% (MCz), obtained with 13 consecutive measurements of 15 kGy compared with the equivalent 195 kGy absorbed dose in one step of irradiation. It is important to note that these results are better than those obtained with routine polymethylmethacrylate (PMMA) dosimeters used in radiation processing dosimetry. (author)

  14. Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.

    Science.gov (United States)

    Kim, Kyeong Heon; Kim, Su Jin; Lee, Tae Ho; Lee, Byeong Ryong; Kim, Tae Geun

    2016-08-08

    Transparent conductive electrodes with good conductivity and optical transmittance are an essential element for highly efficient light-emitting diodes. However, conventional indium tin oxide and its alternative transparent conductive electrodes have some trouble with a trade-off between electrical conductivity and optical transmittance, thus limiting their practical applications. Here, we present silicon nitride transparent conductive electrodes with conducting filaments embedded using the electrical breakdown process and investigate the dependence of the conducting filament density formed in the transparent conductive electrode on the device performance of gallium nitride-based vertical light-emitting diodes. Three gallium nitride-on-silicon-based vertical light-emitting diodes using silicon nitride transparent conductive electrodes with high, medium, and low conducting filament densities were prepared with a reference vertical light-emitting diode using metal electrodes. This was carried to determine the optimal density of the conducting filaments in the proposed silicon nitride transparent conductive electrodes. In comparison, the vertical light-emitting diodes with a medium conducting filament density exhibited the lowest optical loss, direct ohmic behavior, and the best current injection and distribution over the entire n-type gallium nitride surface, leading to highly reliable light-emitting diode performance.

  15. Comparison between a silicon PIN diode and a CsI(Tl) coupled to a silicon PIN diode for dosimetric purpose in radiology

    Science.gov (United States)

    Andreani, Lucia; Bontempi, Marco; Rossi, Pier Luca; Rignanese, Luigi Pio; Zuffa, Mirco; Baldazzi, Giuseppe

    2014-10-01

    The use of amorphous Si-PIN diodes showed interesting applications in detector research. Due to their properties and cost effective value, these devices can be used as small dosimeters for fast and real time dose evaluation. The responses of two different detectors to the measurement of X-ray total air KERMA are compared and presented, with the goal to get a dosimetric parameter directly during the X-ray patients exposure. A bare Si-PIN diode and a Si-PIN diode+CsI(Tl) scintillator were tested and compared to radiologic dosimeters. Both detector outputs were calibrated using a secondary reference standard (CAPINTEC PM 30 dosimeter), in order to analyze and discuss the dose and the energy dependence of the detectors in the range of radiologic interest (tube voltage: 40-140 kVp and additional filtration: 0 mm Al to 4 mm Al). The bare Si-PIN diode shows a very coherent response independently from the X-ray beam quality and from the additional filtration. The Si-PIN+CsI(Tl) detector, on the other hand, shows a high spread of the calibration curves as a function of the tube high voltage and the additional filtration. The presented results could be used to calibrate an image detector in dose.

  16. Comparison between a silicon PIN diode and a CsI(Tl) coupled to a silicon PIN diode for dosimetric purpose in radiology

    Energy Technology Data Exchange (ETDEWEB)

    Andreani, Lucia, E-mail: lucia.andreani4@unibo.it [University of Bologna, Department of Physics and Astronomy, Viale Berti-Pichat 6/2, 40127 Bologna (Italy); INFN Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Bontempi, Marco [Laboratorio NaBi, Istituto Ortopedico Rizzoli, via di Barbiano 1/10, 40136 Bologna (Italy); Rossi, Pier Luca [University of Bologna, Department of Physics and Astronomy, Viale Berti-Pichat 6/2, 40127 Bologna (Italy); INFN Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Rignanese, Luigi Pio [University of Bologna, Department of Physics and Astronomy, Viale Berti-Pichat 6/2, 40127 Bologna (Italy); Zuffa, Mirco [INFN Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy); Baldazzi, Giuseppe [University of Bologna, Department of Physics and Astronomy, Viale Berti-Pichat 6/2, 40127 Bologna (Italy); INFN Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy)

    2014-10-21

    The use of amorphous Si-PIN diodes showed interesting applications in detector research. Due to their properties and cost effective value, these devices can be used as small dosimeters for fast and real time dose evaluation. The responses of two different detectors to the measurement of X-ray total air KERMA are compared and presented, with the goal to get a dosimetric parameter directly during the X-ray patients exposure. A bare Si-PIN diode and a Si-PIN diode+CsI(Tl) scintillator were tested and compared to radiologic dosimeters. Both detector outputs were calibrated using a secondary reference standard (CAPINTEC PM 30 dosimeter), in order to analyze and discuss the dose and the energy dependence of the detectors in the range of radiologic interest (tube voltage: 40–140 kVp and additional filtration: 0 mm Al to 4 mm Al). The bare Si-PIN diode shows a very coherent response independently from the X-ray beam quality and from the additional filtration. The Si-PIN+CsI(Tl) detector, on the other hand, shows a high spread of the calibration curves as a function of the tube high voltage and the additional filtration. The presented results could be used to calibrate an image detector in dose.

  17. Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

    CERN Document Server

    Savanier, Marc

    2016-01-01

    Generation of photon pairs from compact, manufacturable and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity (JSI), which describes the frequency correlations of the photon pair. In particular, heralded single-photon generation requires uncorrelated photons, rather than the highly anti-correlated photons conventionally obtained under continuous-wave (CW) pumping. Recent attempts to achieve such a factorizable JSI have used short optical pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared to the Si microchip pair generator, dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from a Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a CW optical diode ...

  18. Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators.

    Science.gov (United States)

    Li, Yu; Feng, Shaoqi; Zhang, Yu; Poon, Andrew W

    2013-12-01

    We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of ~72.8 mA/W upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of ~72 relative to the responsivity of ~1.0 mA/W upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of ~7 GHz and an open eye diagram at 15 Gbit/s upon 8 V.

  19. Float Zone Growth of Alloy Semiconductor Crystals: Influence of Solutocapillary Convection

    Science.gov (United States)

    Dold, P.; Schweizer, M.; Croell, A.; Campbell, T.; Boschert, S.; Benz, K. W.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Growth techniques with large free melt surfaces are affected by convective flows induced by gradients of the surface tension. In the case of dilute semiconductor alloys (in our case: germanium-silicon), the impact of solutocapillary convection (due to the concentration dependence of the surface tension) has to be taken into account in addition to the "normal" thermocapillary convection (due to the temperature dependence of the surface tension). Theoretical considerations, based on experimental temperature profiles, growth geometry, segregation coefficient, and measured values for the temperature and concentration coefficients of the surface tension, lead to the conclusion that for the germanium rich side of the Ge(1-x)Si(x) system, the contribution of solutocapillary convection is, at least in front of the solid-liquid interface, the dominant factor. It results in an additional flow roll with a flow direction opposite to the thermocapillary flow, similar to the ones reported for metal alloys or high Prandtl-number fluids.

  20. I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode

    Science.gov (United States)

    Panchenko, P.; Rybalka, S.; Malakhanov, A.; Krayushkina, E.; Radkov, A.

    2016-12-01

    The simulation of current-voltage characteristics for 4H-SiC Schottky diode with Ti Schottky contact has been carried out with used of TCAD program. Obtained current-voltage characteristics has been analyzed and compared with theoretical and experimental results. It is established that the Schottky diode parameters (forward current, ideality coefficient, Schottky barrier height, breakdown voltage) obtained in proposed model are good agreement with data for such type diodes.

  1. Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

    NARCIS (Netherlands)

    LeMinh, P.; Holleman, J.; Berenschot, J.W.; Tas, N.R.; Berg, van den A.

    2002-01-01

    Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. In this chapter, the devi

  2. Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector

    NARCIS (Netherlands)

    LeMinh, P.; Holleman, J.; Berenschot, J.W.; Tas, N.R.; Berg, van den A.

    2002-01-01

    Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. Within this contribution,

  3. Dielectric characterization of low-loss calcium strontium titanate fibers produced by laser floating zone technique for wireless communication

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, F. [Department of Physics and I3N, University of Aveiro, 3810-193, Aveiro (Portugal); Polytechnic Institute of Coimbra, 3000-271, Coimbra (Portugal); Valente, M.A.; Costa, L.C.; Costa, F.M. [Department of Physics and I3N, University of Aveiro, 3810-193, Aveiro (Portugal)

    2014-09-15

    Wireless communication technology assisted to a huge development during the last two decades, responding to the growing demand for small size and low weight devices such as cell phones and global positioning systems. The need for miniaturization and higher autonomy resulted in the development of new dielectric oxide ceramics with very specific properties, to be applied as dielectric resonators in filters, oscillators, and antennas. Some crucial properties as a high quality factor, high dielectric constant, and near zero temperature coefficient of resonant frequency must be considered during the selection of the appropriate materials. The present work deals with the preparation of calcium titanate (CaTiO{sub 3}), strontium titanate (SrTiO{sub 3}), and calcium strontium titanate (Ca{sub x}Sr{sub 1-x}TiO{sub 3}) fibers produced by laser floating zone (LFZ) technique. Our results show that fibers grown at lower pulling rates exhibit higher ε', for all the studied frequency range, including the microwave region. Moreover, the quality factor is always high envisaging the possibility to include these materials in future wireless device applications. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Crystal growth of high-quality ZrB 2 single crystals using the floating-zone method

    Science.gov (United States)

    Hori, Kenji; Inoue, Shinji; Isogami, Mineo

    2008-01-01

    High-quality ZrB 2 single crystals with diameters of 13 mm and lengths of 45 mm were grown from boron-rich molten zones (boron 80 mol%), using the RF heated floating-zone method. The (0 0 0 1) single crystals were also grown using seed crystals. Control of temperature gradients on the growing interfaces was performed by arranging ceramic cylinders around the growing crystals and the feed rods. This made it possible to grow high-quality ZrB 2 single crystals free of defects such as lineage structures observed in X-ray topographies of cross-sections. In the central areas (3 mm square) of the grown crystals, the full-widths at half-maximum (FWHM) of the X-ray rocking curve (( 10-1¯0) diffraction) were improved to 24.5-42.4 arc sec compared with the crystals obtained until now. The ZrB 2 obtained seems to be quite suitable for substrates of GaN.

  5. High-pressure optical floating-zone growth of Li(Mn,Fe)PO4 single crystals

    Science.gov (United States)

    Neef, Christoph; Wadepohl, Hubert; Meyer, Hans-Peter; Klingeler, Rüdiger

    2017-03-01

    Mm-sized LiMn1-xFexPO4 single crystals with 0 ⩽ x ⩽ 1 were grown by means of the traveling floating-zone technique at elevated Argon pressure of 30 bar. For the various doping levels, the growth process was optimized with respect to the composition-dependant effective light absorption and transparency of the materials. A convex crystal/melt interface, determined by the angle of incident light, was identified to be particularly crucial for a successful growth. The resulting large single crystalline grains are stoichiometric. Structure refinement shows that lattice parameters as well as the atomic positions and bond lengths linearly depend on the Mn:Fe-ratio. Oriented cuboidal samples with several mm3 of volume were used for magnetic studies which imply an antiferromagnetic ground state for all compositions. The Néel-temperature changes from TN = 32.5(5) K in LiMnPO4 to 49.5(5) K in LiFePO4 while the easy magnetic axis in the ordered phase flips from the crystallographic a- to the b-axis upon Fe-doping of x < 0.2 .

  6. High pressure floating zone growth and structural properties of ferrimagnetic quantum paraelectric BaFe12O19

    Directory of Open Access Journals (Sweden)

    H. B. Cao

    2015-06-01

    Full Text Available High quality single crystals of BaFe12O19 were grown using the floating zone technique in 100 atm of flowing oxygen. Single crystal neutron diffraction was used to determine the nuclear and magnetic structures of BaFe12O19 at 4 K and 295 K. At both temperatures, there exist local electric dipoles formed by the off-mirror-plane displacements of magnetic Fe3+ ions at the bipyramidal sites. The displacement at 4 K is about half of that at room temperature. The temperature dependence of the specific heat shows no anomaly associated with long range polar ordering in the temperature range from 1.90 to 300 K. The inverse dielectric permittivity, 1/ε, along the c-axis shows a T2 temperature dependence between 10 K and 20 K, with a significantly reduced temperature dependence displayed below 10 K. Moreover, as the sample is cooled below 1.4 K there is an anomalous sharp upturn in 1/ε. These features resemble those of classic quantum paraelectrics such as SrTiO3. The presence of the upturn in 1/ε indicates that BaFe12O19 is a critical quantum paraelectric system with Fe3+ ions involved in both magnetic and electric dipole formation.

  7. Si1-xGex crystal growth by the floating zone method starting from SPS sintered feed rods - A segregation study

    Science.gov (United States)

    Wagner, A. C.; Cröll, A.; Hillebrecht, H.

    2016-08-01

    The availability of suitable feed rods for Si-Ge bulk crystal growth is known to be a limiting factor in floating zone growth and other growth techniques. In this work, three Si-rich SiGe single crystals were crystallized by an optical floating zone technique in a double ellipsoid mirror furnace. The feed rods were prepared by pre-synthesis in the Spark Plasma Sintering (SPS) process starting with powders of different compositions. In a detailed section the preparation method of consolidation by mechanical alloyed powders to feed rods will be given. Results from two growth experiments starting with uniform compositions with 11 at% and 20 at% germanium as well as a zone leveling experiment with a segmented feed rod consisting of a starting zone with 32 at% Ge will be discussed. The latter experiment resulted in a crystal with nearly no axial segregation.

  8. Energy backtransfer and infrared photoresponse in erbium-doped silicon p-n diodes

    NARCIS (Netherlands)

    Hamelin, N.; Kik, P.G.; Suyver, J.F.; Kikoin, K.; Polman, A.; Schönecker, A.; Saris, F.W.

    2001-01-01

    Temperature-dependent measurements of the photoluminescence (PL) intensity, PL lifetime, and infrared photocurrent, were performed on an erbium-implanted silicon p - n junction in order to investigate the energy transfer processes between the silicon electronic system and the Er 4 f energy levels. T

  9. Energy backtransfer and infrared photoresponse in erbium-doped silicon p-n diodes

    NARCIS (Netherlands)

    Hamelin, N.; Kik, P.G.; Suyver, J.F.; Kikoin, K.; Polman, A.; Schönecker, A.; Saris, F.W.

    2000-01-01

    Temperature-dependent measurements of the photoluminescence (PL) intensity, PL lifetime, and infrared photocurrent, were performed on an erbium-implanted silicon p - n junction in order to investigate the energy transfer processes between the silicon electronic system and the Er 4 f energy levels. T

  10. Magnesium-doped zinc oxide nanorod-nanotube semiconductor/p-silicon heterojunction diodes

    Science.gov (United States)

    Caglar, Yasemin; Görgün, Kamuran; Ilican, Saliha; Caglar, Mujdat; Yakuphanoğlu, Fahrettin

    2016-08-01

    Nanostructured zinc oxide material is usable in electronic device applications such as light-emitting diodes, heterojunction diode, sensors, solar cell due to its interesting electrical conductivity and optical properties. Magnesium-doped zinc oxide nanorod (NR)-nanotube (NT) films were grown by microwave-assisted chemical bath deposition to fabricate ZnO-based heterojunction diode. It is found that ZnO hexagonal nanorods turn into hexagonal nanotubes when the Mg doping ratio is increased from 1 to 10 %. The values of the optical band gap for 1 % Mg-doped ZnO NR and 10 % Mg-doped ZnO NT films are found to be 3.14 and 3.22 eV, respectively. The n-ZnO:Mg/p-Si heterojunction diodes were fabricated. The diodes exhibited a rectification behavior with ideality factor higher than unity due to the presence of surface states in the junction and series resistance. The obtained results indicate that Mg doping improves the electrical and optical properties of ZnO.

  11. Low-energy internal conversion electrons spectrometry with a silicon diode

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Thiago R. [Universidade de Sao Paulo (USP), Sao Paulo, SP (Brazil). Inst. de Fisica; Camargo, Fabio de; Goncalves, Josemary A.C. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)]. E-mail: fcamargo@ipen.br; josemary@ipen.br; ccbueno@ipen.br; Bueno, Carmen C. [Pontificia Universidade Catolica de Sao Paulo (PUC/SP), Sao Paulo, SP (Brazil). Dept. de Fisica; Fraga, Margarida R.F. [Universidade de Coimbra, Coimbra (Portugal). Dept. de Fisica. Lab. de Instrumentacao e Fisica Experimental de Particulas]. E-mail: margarida@lipc.fis.uc.pt

    2007-07-01

    In this paper the preliminary results obtained with a PIN photodiode (SFH00206) for the detection and spectrometry of internal results from {sup 57}Co, {sup 109}Cd and {sup 133}Ba radioactive sources are described. The effect of the reverse bias on the energy resolution was studied and has shown a value of 2.8 keV (FHWM) for the {sup 57}Co 129.36 keV electron emission, when the diode was biased with 20 V at a temperature of 22 degree C. The obtained energy resolution can be attributed to both the energy loss in the diode dead layer and in the Makrofol covering of the sources, besides the contribution of the preamplifier electronic noise. Nevertheless, the energy resolutions measured are sufficiently good to justify the use of the diode for detection and spectrometry of internal conversion electrons. (author)

  12. Functionalized graphene/silicon chemi-diode H₂ sensor with tunable sensitivity.

    Science.gov (United States)

    Uddin, Md Ahsan; Singh, Amol Kumar; Sudarshan, Tangali S; Koley, Goutam

    2014-03-28

    A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene's Fermi level, leading to tunable sensitivity and detection of H₂ down to the sub-ppm range.

  13. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    Energy Technology Data Exchange (ETDEWEB)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs.

  14. Study of edge effects in the breakdown process of p sup + on n-bulk silicon diodes

    CERN Document Server

    Militaru, O; Bozzi, C; Rold, M D; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

    2000-01-01

    The paper describes the role of the n sup + edge implants in the breakdown process of p sup + on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimization of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n sup + -layers along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence of 1.8x10 sup 1 sup 5 cm sup - sup 2.

  15. A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

    Science.gov (United States)

    Fan, Ching-Lin; Lin, Yi-Yan; Chang, Jyu-Yu; Sun, Bo-Jhang; Liu, Yan-Wei

    2010-06-01

    This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (ΔVTH = ±0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

  16. 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

    Science.gov (United States)

    Yuan, Hao; Tang, Xiao-Yan; Zhang, Yi-Men; Zhang, Yu-Ming; Song, Qing-Wen; Yang, Fei; Wu, Hao

    2014-05-01

    Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO2 dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 μA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.

  17. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

    KAUST Repository

    Guo, Wei

    2011-01-01

    High density (? 1011 cm-2) GaN nanowires and InGaN/GaN disk-in-nanowire heterostructures have been grown on (001) silicon substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit excellent uniformity in length and diameter and a broad emission is obtained by incorporating InGaN disks of varying composition along the length of the nanowires. Monolithic lighting emitting diodes were fabricated with appropriate n- and p-doping of contact layers. White light emission with chromaticity coordinates of x=0.29 and y=0.37 and a correlated color temperature of 5500-6500 K at an injection current of 50 A/ cm2 is measured. The measured external quantum efficiency of the devices do not exhibit any rollover (droop) up to an injection current density of 400 A/ cm2. © 2011 American Institute of Physics.

  18. Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

    NARCIS (Netherlands)

    Sakic, A.; Scholtes, T.L.M.; De Boer, W.B.; Golshani, N.; Derakhshandeh, J.; Nanver, L.K.

    2011-01-01

    An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely li

  19. Growth, mechanical, and magnetic study of SmFeO{sub 3} single crystal grown by optical floating zone technique

    Energy Technology Data Exchange (ETDEWEB)

    Babu, P. Ramesh [Centre for Crystal Growth, VIT University, Vellore, Tamil Nadu (India); Bhaumik, Indranil [Crystal Growth Laboratory, Laser Materials Development and Devices Division, RRCAT, Indore (India); Ganesamoorthy, S. [Material Science Group, IGCAR, Kalpakkam, Tamil Nadu (India); Kalainathan, S., E-mail: kalainathan@yahoo.com [Centre for Crystal Growth, VIT University, Vellore, Tamil Nadu (India); Bhatt, R.; Karnal, A.K.; Gupta, P.K. [Crystal Growth Laboratory, Laser Materials Development and Devices Division, RRCAT, Indore (India)

    2016-08-15

    Single crystals of Samarium orthoferrite (SmFeO{sub 3}) have been grown by the optical floating zone technique. The growth parameters to yield good quality crystals are 5 mm/h for pulling and 30–40 rpm for rotation. The mechanical behavior of the grown crystal has been investigated. Rosette pattern has been observed around the indentation and the microhardness has been found to decreases non-linearly with the applied load. For load higher than 1.96 N there is a transition from palmqvist to median crack due to plastic deformation of the crystal. The hardness parameters like fracture toughness, brittleness index, and yield strength have also been calculated for palmqvist and median cracks occurring on the crystal surface. The magnetic investigations revealed that a magnetic transition in the range of 300–180 K. Above 180 K, the magnetization decreases as Sm and Fe sublattices have opposite spins. At high temperature, two anomalies are observed, one due to near spin reorientation (T{sub SR} = 480 K) and the other is AFM to paramagnetic transitions (T{sub N} = 670 K). The M–H curves exhibit a shape change with temperature due to the emergence and enlargement of multi-domain state of the SmFeO{sub 3} crystals. Bloch parameter (3.28 × 10{sup −5} K{sup −3/2}) has also been evaluated. - Highlights: • SmFeO{sub 3} single crystals have been grown by OFZ technique in air. • The microhardness has been found to decreases non-linearly with the applied load. • At 472 K, spin reorientation occurs in Fe sublattice. • The M–H curves exhibit a shape change with temperature due to the emergence and enlargement of multi-domain state. • Bloch 3/2-law holds good for SmFeO{sub 3} (B-parameter as 3.28 × 10{sup −5} K{sup −3/2}).

  20. The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides

    Science.gov (United States)

    Gertner, E. R.

    1980-01-01

    Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

  1. Structural Characterization of Sputtered Silicon Thin Films after Rapid Thermal Annealing for Active-Matrix Organic Light Emitting Diode

    Science.gov (United States)

    Mugiraneza, Jean de Dieu; Miyahira, Tomoyuki; Sakamoto, Akinori; Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Itoh, Taketsugu

    2010-12-01

    The microcrystalline phase obtained by adopting a two-step rapid thermal annealing (RTA) process for rf-sputtered silicon films deposited on thermally durable glass was characterized. The optical properties, surface morphology, and internal stress of the annealed Si films are investigated. As the thermally durable glass substrate allows heating of the deposited films at high temperatures, micro-polycrystalline silicon (micro-poly-Si) films of uniform grain size with a smooth surface and a low internal stress could be obtained after annealing at 750 °C. The thermal stress in the Si films was 100 times lower than that found in the films deposited on conventional glass. Uniform grains with an average grain size of 30 nm were observed by transmission electron microscopy (TEM) in the films annealed at 800 °C. These micro-poly-Si films have potential application for fabrication of uniform and reliable thin film transistors (TFTs) for large scale active-matrix organic light emitting diode (AMOLED) displays.

  2. Radiation damage in silicon detectors

    CERN Document Server

    Lindström, G

    2003-01-01

    Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

  3. Progress report on the use of hybrid silicon pin diode arrays in high energy physics

    Energy Technology Data Exchange (ETDEWEB)

    Shapiro, S.L. (Stanford Linear Accelerator Center, Menlo Park, CA (USA)); Jernigan, J.G.; Arens, J.F. (California Univ., Berkeley, CA (USA). Space Sciences Lab.)

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump-bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format has 10 {times} 64 pixels, each 120 {mu}m square; and the other format has 256 {times} 156 pixels, each 30 {mu}m square. In both cases, the thickness of the PIN diode layer is 300 {mu}m. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 17 figs.

  4. Silicon Sensor and Detector Developments for the CMS Tracker Upgrade

    CERN Document Server

    D'Alessandro, Raffaello

    2011-01-01

    CMS started a campaign to identify the future silicon sensor technology baseline for a new Tracker for the high-luminosity phase of LHC, coupled to a new effective way of providing tracking information to the experiment trigger. To this end a large variety of 6'' wafers was acquired in different thicknesses and technologies at HPK and new detector module designs were investigated. Detector thicknesses ranging from 50$\\mu$m to 300$\\mu$m are under investigation on float zone, magnetic Czochralski and epitaxial material both in n-in-p and p-in-n versions. P-stop and p-spray are explored as isolation technology for the n-in-p type sensors as well as the feasibility of double metal routing on 6'' wafers. Each wafer contains different structures to answer different questions, e.g. influence of geometry, Lorentz angle, radiation tolerance, annealing behaviour, validation of read-out schemes. Dedicated process test-structures, as well as diodes, mini-sensors, long and very short strip sensors and real pixel sensors ...

  5. Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

    CERN Document Server

    Shakoor, A; Cardile, P; Portalupi, S L; Gerace, D; Welna, K; Boninelli, S; Franzo, G; Priolo, F; Krauss, T F; Galli, M; Faolain, L O

    2013-01-01

    Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({\\Delta}{\\lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects a...

  6. 光学浮区法生长的 GdFeO3单晶%GdFeO3 monocrystal prepared by optical floating zone method

    Institute of Scientific and Technical Information of China (English)

    王占亮; 武安华; 景财年; 占晟; 曹世勋; 徐军

    2013-01-01

      正交钙钛矿结构 GdFeO3材料是一种新型的磁光材料。采用光学浮区法生长磁光晶体 GdFeO3,通过多次试验,生长出的晶体直径达到8mm,长度为50~80mm,晶体截面抛光后未发现明显的夹杂物等缺陷。测试结果证明光学浮区法是生长 GdFeO3磁光晶体的有效方法。%  Gadolinium orthoferrite crystals (GdFeO3) with orthogonal perovskite structure is a novel magneto-optical crystal. The magneto-optical crystal GdFeO3 (gadolinium orthoferrite) was grown by floating zone method. The growth parameters were optimized and GdFeO3 single crystal was prepared with diameter of up to 8mm and length of 50-80mm. There are no visible inclusions on the polished surface. The test results prove that floating zone method is an effective technology to grow GdFeO3 magneto-optical crystal.

  7. Hetero-seed and hetero-feed single crystal growth of SmxDy1-xFeO3 perovskites based on optical floating zone method

    Science.gov (United States)

    Xu, Kai; Zhao, Weiyao; Xing, Juanjuan; Gu, Hui; Ren, Wei; Zhang, Jincang; Cao, Shixun

    2017-06-01

    We studied samarium-dysprosium rare-earth orthoferrites SmxDy1-xFeO3 (SDFO, x = 0-1, interval 0.1) with 11 different x concentration values. All of the SDFO single crystals were successfully grown by a hetero-seed and hetero-feed optical-floating-zone technique in flowing air. The XRD powder patterns illustrate that the lattice mismatch of two samples with Δx = 0.1 is about 0.1-0.2% in ac plane, which is considered appropriate for our hetero-seed and hetero-feed crystal growth. Thus, we could successfully grow the series of SDFO single crystals continuously, for example, the x = 0.8 single crystal was grown on the x = 0.7 seed rod. X-ray back-reflection Laue photographs indicate good quality of all the as-grown SDFO single crystals. Composition analysis of SDFO single crystals were conducted by scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), which demonstrate the accurate cation stoichiometry for each crystal. Moreover, we show that such crystal system possesses particular anisotropic magnetic property. The hetero-seed growth method and hetero-feed single crystal relay growth based on optical-floating-zone technique will be useful in high-throughput crystal materials growth.

  8. Floating-zone growth and property characterizations of high-quality La2-xSrxCuO4 superconductor crystals

    Institute of Scientific and Technical Information of China (English)

    Shen Xiao-Li; Li Zheng-Cai; Shen Cai-Xia; Lu Wei; Dong Xiao-Li; Zhou Fang; Zhao Zhong-Xian

    2009-01-01

    We have grown underdoped (x = 0.11, 0.12) and optimally doped (x = 0.16) La2-xSrxCuO4 single crystals by the traveling-solvent floating-zone technique. In order to prepare good quality cuprate crystals, we have made much effort to optimize the preparation procedures. For example, we haveadopted the sol-gel route to prepare a highly fine and homogeneous La2-xSrxCuO4 precursor powder for fabricating a very dense ceramic feed rod used for the floating-zone growth, and we have also used quite a slow growth rate. The high quality of the grown crystals has been verified by double-crystal x-ray rocking curves, with the full-width-at-half-maximum being only 113-150 arcseconds, which are the best data reported so far for La2-xSrxCuO4 crystals. The superconducting critical temperatures of the grown crystals are 30, 31 and 38.5 K for x = 0.11, 0.12 and 0.16 samples, respectively, according to magnetic measurements.

  9. Sr1-x BaxTiO3 and Sr1-x Cax TiO3 crystal growth by floating zone method

    Science.gov (United States)

    Oliveira, F. S.; Dos Santos, C. A. M.; Machado, A. J. S.

    2014-03-01

    Strontium titanate has both technological and scientific interest due to high dielectric constant, semiconducting n-type behavior after oxygen reduction, and unconventional superconductivity. Titanate single crystals are commonly grown by many routes as Verneuil commercial, self-flux, and floating zone method. Nabokin et al. were able to grow high quality SrTiO3 samples in an optical furnace. In order to enhance the dielectric constant, Sr 2+has been replaced by Ba2+ or Ca2+ atoms, but solid solutions implies lattice distortions which can affect the quality of these single crystals. This work revisits the preparation of the Sr1-xBaxTiO3 and Sr1-xCaxTiO3 single crystals using floating zone method. The crystals were grown with a Quantum Design infra-red image furnace starting with SrCO3, BaCO3, CaCO3, and TiO2 high purity powders. The quality of single crystals were analyzed by x-ray difractometry. The influence of the growth conditions on the single crystal are reported. The electrical resistivity as a function of the temperature and the influence of the oxygen contents are reported. This material based upon work supported by FAPESP, CNPq, and NAP-USP. K. Behnia is acknowledged for some suggestions.

  10. Characterization of silicon sensor materials and designs for the CMS Tracker Upgrade

    CERN Document Server

    Dierlamm, Alexander Hermann

    2012-01-01

    During the high luminosity phase of the LHC (HL-LHC, starting around 2020) the inner tracking system of CMS will be exposed to harsher conditions than the current system was designed for. Therefore a new tracker is planned to cope with higher radiation levels and higher occupancies. Within the strip sensor developments of CMS a comparative survey of silicon materials and technologies is being performed in order to identify the baseline material for the future tracker. Hence, a variety of materials (float-zone, magnetic Czochralski and epitaxially grown silicon with thicknesses from 50$\\mu$m to 320$\\mu$m as p- and n-type) has been processed at one company (Hamamatsu Photonics K.K.), irradiated (proton, neutron and mixed irradiations up to 1.5e15n$_{eq}$/cm$^2$ and beyond) and tested under identical conditions. The wafer layout includes a variety of devices to investigate different aspects of sensor properties like simple diodes, test-structures, small strip sensors and a strip sensor array with varying strip p...

  11. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  12. Radiation tolerance of boron doped dendritic web silicon solar cells

    Science.gov (United States)

    Rohatgi, A.

    1980-01-01

    The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

  13. Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

    Science.gov (United States)

    Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

    2016-06-01

    Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

  14. Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose.

    Science.gov (United States)

    Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

    2016-01-01

    Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future "internet of things" viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm(2), a current rectification ratio up to 4 × 10(3) between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

  15. Silicon nanoparticle-ZnS nanophosphors for ultraviolet-based white light emitting diode

    Science.gov (United States)

    Stupca, Matthew; Nayfeh, Osama M.; Hoang, Tuan; Nayfeh, Munir H.; Alhreish, Bahjat; Boparai, Jack; AlDwayyan, Abdullah; AlSalhi, Mohamad

    2012-10-01

    Present red phosphor converters provide spectra dominated by sharp lines and suffer from availability and stability issues which are not ideal for color mixing in display or solid state lighting applications. We examine the use of mono dispersed 3 nm silicon nanoparticles, with inhomogeneously broadened red luminescence as an effective substitute for red phosphors. We tested a 3-phase hybrid nanophosphor consisting of ZnS:Ag, ZnS:Cu,Au,Al, and nanoparticles. Correlated color temperature is examined under UV and LED pumping in the range 254, 365-400 nm. The temperature is found reasonably flat for the longer wavelengths and drops for the shorter wavelengths while the color rendering index increases. The photo stability of the phosphors relative to the silicon nanoparticles is recorded. The variation in the temperature is analyzed in terms of the strength of inter-band-gap transition and continuum band to band transitions.

  16. A study of the silicon Bulk-Barrier Diodes designed in planar technology

    Directory of Open Access Journals (Sweden)

    L. Georgopoulos

    2009-01-01

    Full Text Available In this paper, it is studied for the first time, the possibility of manufacturing a Bulk Barrier diode in planar technology usingsimulation. This study is based on simulation results obtained with a 2-D device simulator (S-PISCES. More precisely, theelectrical and switching behavior of the proposed devices in planar technology were investigated. The results of this studyshow that the technological parameters (doping concentrations, as well as the geometrical sizes (middle region widthand the bias conditions (applied voltage, have significant effects on the electrical and switching behavior of the proposeddevices. The appropriate choice of these parameters can reduce the switching time in the range of few picoseconds andalso dramatically modify the current through the device. The simulation results of devices in planar technology have beencompared with those designed in non planar technology. Finally, good agreement among theory and simulations results ofthe proposed devices observed.

  17. Fluorescent Silicon Carbide and its Applications in White Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Ou, Yiyu

    light extraction efficiency are presented. White LEDs are the most promising techniques to replace the conventional lighting sources. A typical white LED consists of a Gallium Nitride (GaN) blue or Ultraviolet (UV) LED stack and a wavelengthconversion material. Silicon Carbide (SiC) has a wide optical...... bandgap and could be tailored to emit light at different wavelength by introducing different dopants. Combined emitting spectra of two types of DAP co-doped f-SiC could cover the whole visible spectral range and make f-SiC as a good candidate of wavelength-conversion material. It has a better color...

  18. Correlation of the crystal orientation and electrical properties of silicon thin films on glass crystallized by line focus diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Huang, J.; Teal, A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Suntech R& D Australia, Botany, NSW 2019 (Australia); Varlamov, S.; Green, M.A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2016-06-30

    In this work, crystallographic orientation of polycrystalline silicon films on glass formed by continuous wave diode laser crystallization was studied. Most of the grain boundaries were coincidence lattice Σ3 twin boundaries and other types of boundaries such as, Σ6, Σ9, and Σ21 were also frequently observed. The highest photoluminescence signal and mobility were observed for a grain with (100) orientation in the normal direction. X-ray diffraction results showed the highest occupancies between 41 and 70% along the (110) orientation. However, the highest occupancies changed to (100) orientation when a 100 nm thick SiO{sub x} capping layer was applied. Suns-Voc measurement and photoluminescence showed that higher solar cell performance is obtained from the cell crystallized with the capping layer, which is suspected from increased occupancies of (100) orientation. - Highlights: • Linear grains parallel to the scan direction formed with high density. • Σ3 coincidence lattice (CSL) boundaries found inside a grain • Grain boundaries exhibit various CSL boundaries such as Σ9, Σ18, and Σ27. • Grain with < 100 > orientation in normal direction showed highest electrical properties. • Improved voltage observed when percentage of < 100 > normal orientation is increased.

  19. Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

    Science.gov (United States)

    Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

    2017-06-01

    This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

  20. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

    Directory of Open Access Journals (Sweden)

    Jaber Derakhshandeh

    2011-12-01

    Full Text Available An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017 cm−3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm2 anode area.

  1. Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

    Science.gov (United States)

    Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

    2014-04-24

    A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements.

  2. COTS Silicon diodes as radiation detectores in proton and heavy charged particle radiotherapy

    DEFF Research Database (Denmark)

    Kaiser, Franz-Joachim; Bassler, Niels; Jäkel, Oliver

    chambers of the same volume. In this paper, a detector based on a low-cost BPW-34 photodiode is developed and charac- terized for the use in proton and carbon ion beams. The BPW-34 photodiode has a well defined sensitive volume of 2.7 × 2.7 mm2 × 10 μm which is suitable in situations where a high spatial...... to commercially available diode detectors used for radiotherapy. In carbon ion and proton beams the detector reproduces well dose distributions such as beam profiles and depth dose curves. Quenching in the order of a few percent was observed with increased LET. In addition, a decreasing sensitivity is seen...... with total absorbed dose, which was not observed in MV photon beams. In the case of carbon ions the sensitivity stabilizes after approximately 600 Gy, whereas in proton beams a stabilization after 200 Gy is reported in the literature [2]. These results are comparable to earlier experiments in proton beams [2...

  3. Growth of YbFe2O4 single crystals exhibiting long-range charge order via the optical floating zone method

    Science.gov (United States)

    Williamson, H. L.; Mueller, T.; Angst, M.; Balakrishnan, G.

    2017-10-01

    We report the growth of YbFe2O4 single crystals via the floating zone technique, in four different oxygen partial pressures ranging from CO:CO2 = 1:5 to 1:2.5, for a cross comparison of stoichiometry effects. We obtained highly stoichiometric single crystals with sharp magnetic transitions as well as off-stoichiometric samples with smeared transitions. We also provide for the first time clear evidence of 3D long-range charge order correlations at room temperature in YbFe2O4 through high energy X-ray diffraction, identical to the analogous LuFe2O4. The correlation length obtained for YbFe2O4 in the c → direction is at least a factor of 5 larger than that observed in LuFe2O4.

  4. Preparation of directionally solidified BaTi2O5-Ba6Ti17O40 eutectic by the floating zone method

    Science.gov (United States)

    Shiga, K.; Katsui, H.; Goto, T.

    2017-02-01

    The BaTi2O5-Ba6Ti17O40 eutectic (BaO-68.7 mol% TiO2) was directionally solidified by the floating zone (FZ) method and crystalline phases, microstructures and orientation were investigated. Ba6Ti17O40 with faceted rod-like shape was dispersed in the BaTi2O5 matrix. The growth directions of BaTi2O5 and Ba6Ti17O40 were parallel to the b and a axis, respectively, and the orientation relations were BaTi2O5 (010)//Ba6Ti17O40(60 2 ̅) and BaTi2O5 (001)//Ba6Ti17O40 (001).

  5. Optical, scintillation properties and defect study of Gd2Si2O7:Ce single crystal grown by floating zone method

    Science.gov (United States)

    Feng, He; Xu, Wusheng; Ren, Guohao; Yang, Qiuhong; Xie, Jianjun; Xu, Jun; Xu, Jiayue

    2013-02-01

    Single crystal of Gd2Si2O7:Ce (GPS) presenting attractive scintillation performance was grown by the floating zone method. The vacuum ultra-violet (VUV) excitation and emission, ultra-violet (UV) excitation and emission spectra and fluorescent decay time at 77 K and RT were measured and discussed. Relative energy levels of 5d sublevels of Ce3+ in GPS:Ce are detected by the VUV excitation spectrum. The UV emission curve of GPS:1%Ce peaks around 382 nm at 77 K and moves towards longer wavelength direction as temperature increases. Thermally stimulated luminescence (TSL) was employed to investigate the defects in GPS:1%Ce. Energy depths of two traps detected in GPS:1%Ce are 0.64 and 1.00 eV.

  6. Crystal growth and optical properties of Ce:(La,Gd)2Ge2O7 grown by the floating zone method

    Science.gov (United States)

    Kurosawa, Shunsuke; Shishido, Toetsu; Sugawara, Takamasa; Yubuta, Kunio; Jan, Pejchal; Suzuki, Akira; Yokota, Yuui; Shoji, Yasuhiro; Kamada, Kei; Yoshikawa, Akira

    2014-05-01

    Some pyrosilicate scintillators such as Ce:Gd2Si2O7 and Ce:Lu2Si2O7 have a good light output, and especially Ce:(Gd,La)2Si2O7 has an excellent light output of over 36,000 ph/MeV. In order to search novel scintilators, we have developed a pyrogermanate-based scintillation material (Ce0.01,Gd0.90,La0.09)2Ge2O7 using the floating zone method. Although the light output was decreased due to quenching, 5d-4f transition of Ce3+ was observed around 480 nm in photo- and radio-luminescence spectra. This emission wavelength was longer than that of (Ce0.01,Gd0.90,La0.09)2Si2O7 with an emission wavelength of 390 nm.

  7. High quality (InNb)0.1Ti0.9O2 single crystal grown using optical floating zone method

    Science.gov (United States)

    Liu, Ziyi; Song, Yongli; Wang, Xianjie; Su, Yantao; Liu, Zhiguo; Sui, Yu

    2016-07-01

    A crack-free (InNb)0.1Ti0.9O2 single crystal of 4 mm in diameter and 30 mm in length was successfully grown by the optical floating zone method. The polycrystalline feed and seed rods for growing the (InNb)0.1Ti0.9O2 single crystal were prepared by solid-state reaction method. The oxygen partial pressure significantly affected the crystal quality of the material. As shown in reflecting polarizing microphotographs, crystals grown in air have fewer grain boundaries than those grown in pure oxygen; some air-grown crystals are completely free of grain boundaries. Compared to pure TiO2 crystal, the (Nb+In) co-doped TiO2 crystal required a lower growth rate of 5 mm/h to ensure high quality.

  8. Design and realization of a facility for the characterization of Silicon Avalanche PhotoDiodes

    CERN Document Server

    Celentano, Andrea; De Vita, Raffaella; Fegan, Stuart; Mini, Giuseppe; Nobili, Gianni; Ottonello, Giacomo; Parodi, Franco; Rizzo, Alessandro; Zonta, Irene

    2015-01-01

    We present the design, construction, and performance of a facility for the characterization of Silicon Avalanche Photodiodes in the operating temperature range between -2 $^\\circ$C and 25 $^\\circ$C. The system can simultaneously measure up to 24 photo-detectors, in a completely automatic way, within one day of operations. The measured data for each sensor are: the internal gain as a function of the bias voltage and temperature, the gain variation with respect to the bias voltage, and the dark current as a function of the gain. The systematic uncertainties have been evaluated during the commissioning of the system to be of the order of 1%. This paper describes in detail the facility design and layout, and the procedure employed to characterize the sensors. The results obtained from the measurement of the 380 Avalanche Photodiodes of the CLAS12-Forward Tagger calorimeter detector are then reported, as the first example of the massive usage of the facility.

  9. Radiation Damage Study on the Electrical Properties of Si Diodes

    Science.gov (United States)

    Pascoalino, Kelly C. S.; Gonçalves, Josemary A. C.; Tobias, Carmen C. B.

    2011-08-01

    The aim of this work was to study the radiation damage effects on the electrical properties of Float Zone (FZ) and Magnetic Czochralski (MCz) diodes. The effects were evaluated by measuring the reverse current and capacitance of these devices as a function of the reverse voltage. The irradiation was performed in the Radiation Technology Center (CTR) at IPEN-CNEN/SP using a 60Co irradiator (Gammacell 220-Nordion) with a dose rate of about 2 kGy/h. Samples were irradiated at room temperature in five steps up to an accumulated dose of 603 kGy.

  10. Investigation and modelling of static and dynamic behaviour if silicon-PSN- and silicon-carbide-Schottky-diodes for low currents

    NARCIS (Netherlands)

    Neeb, C.; Luerkens, P.

    2009-01-01

    High voltage generators for X-ray applications are moving to increasing switching frequency. As a consequence switching losses, namely turn-on losses, of high voltage diodes are becoming dominant. Data sheets of preferred diodes do not contain relevant data in this respect, and simulation models of

  11. The development of p-type silicon detectors for the high radiation regions of the LHC

    CERN Document Server

    Hanlon, M D L

    1998-01-01

    This thesis describes the production and characterisation of silicon microstrip detectors and test structures on p-type substrates. An account is given of the production and full parameterisation of a p-type microstrip detector, incorporating the ATLAS-A geometry in a beam test. This detector is an AC coupled device incorporating a continuous p-stop isolation frame and polysilicon biasing and is typical of n-strip devices proposed for operation at the LHC. It was successfully read out using the FELix-128 analogue pipeline chip and a signal to noise (s/n) of 17+-1 is reported, along with a spatial resolution of 14.6+-0.2 mu m. Diode test structures were fabricated on both high resistivity float zone material and on epitaxial material and subsequently irradiated with 24 GeV protons at the CERN PS up to a dose of (8.22+-0.23) x 10 sup 1 sup 4 per cm sup 2. An account of the measurement program is presented along with results on the changes in the effective doping concentration (N sub e sub f sub f) with irradiat...

  12. 12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode.

    Science.gov (United States)

    You, Jong-Bum; Park, Miran; Park, Jeong-Woo; Kim, Gyungock

    2008-10-27

    We present a high speed optical modulation using carrier depletion effect in an asymmetric silicon p-n diode resonator. To optimize coupling efficiency and reduce bending loss, two-step-etched waveguide is used in the racetrack resonator with a directional coupler. The quality factor of the resonator with a circumference of 260 um is 9,482, and the DC on/off ratio is 8 dB at -12V. The device shows the 3dB bandwidth of approximately8 GHz and the data transmission up to 12.5Gbit/s.

  13. Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Oh, Kyonghwan; Kwon, Oh-Kyong

    2012-03-01

    A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

  14. High pressure floating zone growth and structural properties of ferrimagnetic quantum paraelectric BaFe{sub 12}O{sub 19}

    Energy Technology Data Exchange (ETDEWEB)

    Cao, H. B. [Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Zhao, Z. Y. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Lee, M. [Department of Physics, Florida State University, Tallahassee, Florida 32306-3016 (United States); National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310-3706 (United States); Choi, E. S. [National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310-3706 (United States); McGuire, M. A.; Sales, B. C. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Zhou, H. D. [Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Yan, J.-Q.; Mandrus, D. G. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

    2015-06-01

    High quality single crystals of BaFe{sub 12}O{sub 19} were grown using the floating zone technique in 100 atm of flowing oxygen. Single crystal neutron diffraction was used to determine the nuclear and magnetic structures of BaFe{sub 12}O{sub 19} at 4 K and 295 K. At both temperatures, there exist local electric dipoles formed by the off-mirror-plane displacements of magnetic Fe{sup 3+} ions at the bipyramidal sites. The displacement at 4 K is about half of that at room temperature. The temperature dependence of the specific heat shows no anomaly associated with long range polar ordering in the temperature range from 1.90 to 300 K. The inverse dielectric permittivity, 1/ε, along the c-axis shows a T{sup 2} temperature dependence between 10 K and 20 K, with a significantly reduced temperature dependence displayed below 10 K. Moreover, as the sample is cooled below 1.4 K there is an anomalous sharp upturn in 1/ε. These features resemble those of classic quantum paraelectrics such as SrTiO{sub 3}. The presence of the upturn in 1/ε indicates that BaFe{sub 12}O{sub 19} is a critical quantum paraelectric system with Fe{sup 3+} ions involved in both magnetic and electric dipole formation.

  15. Single crystal growth of spin-ladder compound La8Cu7O19 by the travelling-solvent floating zone method

    Science.gov (United States)

    Mohan, A.; Singh, S.; Partzsch, S.; Zwiebler, M.; Geck, J.; Wurmehl, S.; Büchner, B.; Hess, C.

    2016-08-01

    Large single crystals of La8Cu7O19 have been grown using the travelling-solvent floating zone method. A rather high oxygen pressure of 9 bar in the growth chamber and a slow growth speed of 0.5 mm/h were among the most important parameters in stabilizing the growth of this incongruently melting compound. Interestingly, a novel growth scenario has been witnessed. The crystal structure of the grown La8Cu7O19 crystal has been analyzed using single crystal diffractometry to extract important structural parameters of this compound. We find that La8Cu7O19 crystallizes in a monoclinic structure with space group C 2 / c and has the lattice parameters a ≈ 13.83 Å, b ≈ 3.75 Å, c ≈ 34.59 Å, and β ≈ 99.33 °, in good agreement with the data obtained on polycrystalline samples in the literature. The magnetization shows a highly anisotropic behavior, and an anomaly at T ≈103 K.

  16. Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

    Institute of Scientific and Technical Information of China (English)

    LI Ming; MA Xiang-Yang; YANG De-Ren

    2008-01-01

    By means of low-temperature(10K)Fourier transform infrared absorption spectroscopy,the kinetics of nitrogen indiffusion in Czochralski(CZ)silicon annealed 8t 1150-1250°C in nitrogen ambient is investigated.Moreover,the nitrogen diffusivities in CZ silicon at elevated temperatures deduced herein are in good agreement with those previously obtained in float-zone silicon,thus leading to the conclusion that the nitrogen indiffusion in CZ silicon at elevated temperatures is via nitrogen pairs.

  17. Silicon MIS diodes with Cr{sub 2}O{sub 3} nanofilm: Optical, morphological/structural and electronic transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Erdogan, Ibrahim Y. [Bingoel University, Faculty of Sciences and Arts, Department of Chemistry, 12000- Bingoel (Turkey); Guellue, O., E-mail: omergullu@gmail.com [Batman University, Faculty of Sciences and Arts, Department of Physics, 72060- Batman (Turkey)

    2010-04-15

    In this work we report the optical, morphological and structural characterization and diode application of Cr{sub 2}O{sub 3} nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr{sub 2}O{sub 3} nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr{sub 2}O{sub 3} on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr{sub 2}O{sub 3} film is 3.08 eV. The PL measurement shows that the Cr{sub 2}O{sub 3} nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr{sub 2}O{sub 3}/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr{sub 2}O{sub 3}/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 x 10{sup 13} eV{sup -1} cm{sup -2} to 8.45 x 10{sup 12} eV{sup -1} cm{sup -2}.

  18. Investigation of magnetic property of GdFeO{sub 3} single crystal grown in air by optical floating zone technique

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh Babu, P. [Centre for Crystal Growth, School Advance Sciences, VIT University, Vellore, Tamil Nadu (India); Bhaumik, Indranil [Crystal Growth Laboratory, Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore (India); Ganesamoorthy, S. [X-ray Scattering and Crystal Growth Section, CMPD, Material Science Group, IGCAR, Kalpakkam, Tamil Nadu (India); Kalainathan, S., E-mail: kalainathan@yahoo.com [Centre for Crystal Growth, School Advance Sciences, VIT University, Vellore, Tamil Nadu (India); Bhatt, R.; Karnal, A.K.; Gupta, P.K. [Crystal Growth Laboratory, Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore (India)

    2015-05-15

    Highlights: • GdFeO{sub 3} single crystals have been grown by OFZ technique in air. • Sample exhibits one order lower coercive field than crystal grown in oxygen. • Bloch 3/2-law holds good for GdFeO{sub 3} (B-parameter as 2.69 × 10{sup −5} K{sup −3/2}). • The coercivity exhibited sharp dip at 200 and 550 K. • At 550 K pinning of the direction of weak ferromagnetism by AFM ordering vanishes. - Abstract: Single phase Gadolinium orthoferrite (GdFeO{sub 3}) with orthorhombic perovskite structure was synthesized without any garnet impurities by solid state reaction and subsequently GdFeO{sub 3} single crystals were grown by the optical floating zone technique. The temperature dependent magnetization measurement revealed the magnetic phase transition from anti-ferromagnetic ordering to paramagnetic ordering at 670 K. The overlapping of the magnetization measured under zero-field and field cooling condition in the range of 300–20 K signifies that there is no magnetic transition in this temperature range. The hysteresis loop measurements revealed that in comparison to the values reported for the crystal grown in oxygen, the air grown sample exhibits one order lower coercive field (∼75 Oe). The Bloch 3/2-law was found to hold good for GdFeO{sub 3} with the value of B-parameter as 2.69 × 10{sup −5} K{sup −3/2}. The coercivity exhibited sharp dip at 200 and 550 K. At and above 550 K the ability of the antiferromagnetic ordering to pin the direction of magnetization related to the weak ferromagnetism present in the material vanishes leading to the lowering in the coercivity.

  19. High-resolution photoinduced transient spectroscopy of neutron irradiated bulk silicon

    CERN Document Server

    Kozlowski, R; Nossarzhevska, E

    2002-01-01

    High-resolution photoinduced transient spectroscopy has been employed in a study on the formation of defects in bulk silicon due to 1 MeV neutron irradiation. Apart from divacancies in various charge states, complexes involving interstitial carbon and oxygen were revealed. The defect structure of float zone and Czochralski-grown material exposed to fluences of 2x10 sup 1 sup 4 and 6.75x10 sup 1 sup 4 cm sup - sup 2 is compared.

  20. Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Shin, Min-Seok; Jo, Yun-Rae; Kwon, Oh-Kyong

    2011-03-01

    In this paper, we propose a driving method for compensating the electrical instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and the luminance degradation of organic light-emitting diode (OLED) devices for large active matrix OLED (AMOLED) displays. The proposed driving method senses the electrical characteristics of a-Si:H TFTs and OLEDs using current integrators and compensates them by an external compensation method. Threshold voltage shift is controlled a using negative bias voltage. After applying the proposed driving method, the measured error of the maximum emission current ranges from -1.23 to +1.59 least significant bit (LSB) of a 10-bit gray scale under the threshold voltage shift ranging from -0.16 to 0.17 V.

  1. Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Jung, Myoung-Hoon; Kim, Ohyun; Kim, Byeong-Koo; Chung, Hoon-Ju

    2009-05-01

    A new driving method for active-matrix organic light-emitting diode displays is proposed and evaluated. The pixel structure of the proposed driving method is composed of three thin-film transistors (TFTs) and one capacitor. It inserts black data into display images to reset driving TFTs for the purpose of maintaining constant electrical characteristics of driving TFTs. The proposed driving scheme is less sensitive to the hysteresis of low-temperature polycrystalline silicon (LTPS) TFTs than the conventional pixel structure with two TFTs and one capacitor, and this scheme can virtually eliminate the recoverable residual image that occurs owing to the hysteresis characteristics of LTPS TFTs. In the proposed driving scheme, black data are inserted into displayed images so that the motion image quality is improved.

  2. The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes

    Energy Technology Data Exchange (ETDEWEB)

    Farhi, G; Charlebois, S A [Departement de genie electrique et genie informatique, et Institut interdisciplinaire d' innovation technologique (3IT), Universite de Sherbrooke, 2500, Boulevard de l' Universite, J1K 2R1, Sherbrooke, QC (Canada); Morris, D [Departement de physique et Institut interdisciplinaire d' innovation technologique (3IT), Universite de Sherbrooke, 2500, Boulevard de l' Universite, J1K 2R1, Sherbrooke, QC (Canada); Raskin, J-P, E-mail: ghania.farhi@usherbrooke.ca [Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Universite catholique de Louvain, Place du Levant, 3, B-1348 Louvain-la-Neuve (Belgium)

    2011-10-28

    Hole electrical transport in a p-doped nanochannel defined between two L-shape etched trenches made on a silicon-on-insulator substrate is investigated using a TCAD-Medici simulator. We study the impact of the etched trenches' geometry and dielectric filling materials on the current-voltage characteristics of the device. Carrier accumulation on frontiers defined by the trenches causes a modulation of the hole density inside the conduction channel as the bias voltage varies and this gives rise to a diode-like characteristic. For a 1.2 {mu}m-long channel, plots of the electric field distribution show that a nonlinear transport regime is reached at a moderate reverse and forward bias of {+-} 2 V. Plots of the carrier velocity along the conduction channel show that holes remain hot for a few hundreds of nm outside the nanometre-wide channel, at a bias of {+-} 10 V. Filling the etched trenches with a high-{kappa} dielectric material gives rise to a lower threshold voltage, V{sub th}. A similar decrease of V{sub th} is also achieved by reducing the longitudinal and/or the transverse trench width. Our simulation results provide useful design guidelines for future integrated self-switching-diode-based circuits.

  3. Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

    Science.gov (United States)

    Lin, Guangyang; Yi, Xiaohui; Li, Cheng; Chen, Ningli; Zhang, Lu; Chen, Songyan; Huang, Wei; Wang, Jianyuan; Xiong, Xihuan; Sun, Jiaming

    2016-10-01

    A lateral p-Si0.05Ge0.95/i-Ge/n-Si0.05Ge0.95 heterojunction light emitting diode on a silicon-on-insulator (SOI) substrate was proposed, which is profitable to achieve higher luminous extraction compared to vertical junctions. Due to the high carrier injection ratio of heterostructures and optical reflection at the SiO2/Si interface of the SOI, strong room temperature electroluminescence (EL) at around 1600 nm from the direct bandgap of i-Ge with 0.30% tensile strain was observed. The EL peak intensity of the lateral heterojunction is enhanced by ˜4 folds with a larger peak energy than that of the vertical Ge p-i-n homojunction, suggesting that the light emitting efficiency of the lateral heterojunction is effectively improved. The EL peak intensity of the lateral heterojunction, which increases quadratically with injection current density, becomes stronger for diodes with a wider i-Ge region. The CMOS compatible fabrication process of the lateral heterojunctions paves the way for the integration of the light source with the Ge metal-oxide-semiconductor field-effect-transistor.

  4. A polymer based miniature loop heat pipe with silicon substrate and temperature sensors for high brightness light-emitting diodes

    NARCIS (Netherlands)

    Ye, H.; Sokolovskij, R.; Zeijl, H.W. van; Gielen, A.W.J.; Zhang, G.

    2014-01-01

    Solid State Lighting (SSL) systems, powered by light-emitting diodes (LEDs), are revolutionizing the lighting industry with energy saving and enhanced performance compared to traditional light sources. However, around 70%-80% of the electric power will still be transferred to heat. As the elevated t

  5. A polymer based miniature loop heat pipe with silicon substrate and temperature sensors for high brightness light-emitting diodes

    NARCIS (Netherlands)

    Ye, H.; Sokolovskij, R.; Zeijl, H.W. van; Gielen, A.W.J.; Zhang, G.

    2014-01-01

    Solid State Lighting (SSL) systems, powered by light-emitting diodes (LEDs), are revolutionizing the lighting industry with energy saving and enhanced performance compared to traditional light sources. However, around 70%-80% of the electric power will still be transferred to heat. As the elevated

  6. Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

    Science.gov (United States)

    Shibib, M. A.; Lindholm, F. A.; Fossum, J. G.

    1979-01-01

    A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

  7. First measurements of segmented silicon tracking detectors with built-in multiplication layer

    Energy Technology Data Exchange (ETDEWEB)

    Cavallaro, Emanuele; Lange, Jörn; Lopez Paz, Ivan; Grinstein, Sebastian [Institut de Física d' Altes Energies, IFAE, Barcelona (Spain); Baselga, Marta; Greco, Virginia; Quirion, David; Pellegrini, Giulio [Centro Nacional de Microelectrónica, CNM-IMB (CSIC), Barcelona (Spain)

    2015-10-01

    Silicon sensors with a built-in multiplication layer, also known as Low Gain Avalanche Detectors (LGAD), are a new technology of potentially radiation hard silicon sensors developed at CNM (Centro Nacional de Microelectrónica) in the framework of the CERN-RD50 collaboration. The concept of the LGAD technology is to produce a tracking sensor with an intrinsic low gain due to charge multiplication in order to enhance the signal-to-noise ratio. This makes LGAD detectors appealing for the high energy physics community which foresees a possible application in harsh radiation environments such as the inner detectors of the experiments at the High Luminosity LHC, where a fluence of 2×10{sup 16} n{sub eq}/cm{sup 2} is expected in the innermost pixel layer of the tracker. LGAD pad diodes with a multiplication factor of 10 at 200 V before irradiation have been produced and studied but it still has to be proven that this technology can be applied to segmented devices. The electric field profile at the p–n junction plays a crucial role for the multiplication mechanism that could be affected by implantation edge effects in highly segmented devices. In this paper the results of the first measurements of segmented LGAD devices from 285 μm thick float zone wafers will be discussed. Time resolved Transient-Current-Technique analysis has been performed on strip devices and charge collection measurements have been carried out on pixel detectors to test the LGAD technology on highly segmented devices.

  8. Miniature silicon diode matrix-detector for in vivo measurement of 133xenon disappearance in the canine myocardium following local tissue injection

    DEFF Research Database (Denmark)

    Svendsen, Jesper Hastrup; Rasmussen, H B; Damgaard, Y

    1992-01-01

    After local tissue depositioning of 133Xenon (133Xe) the regional washout is usually registered by a NaI(Tl) detector. The residual radioactivity of 133Xe is usually measured at its 81 keV photopeak. However, using small Silicon (Si) photodiodes it is feasible to measure only the low-energy activ......After local tissue depositioning of 133Xenon (133Xe) the regional washout is usually registered by a NaI(Tl) detector. The residual radioactivity of 133Xe is usually measured at its 81 keV photopeak. However, using small Silicon (Si) photodiodes it is feasible to measure only the low......-energy activity in the X-ray energy range. In the myocardium of open chest dogs 133Xe washout measurements by a matrix of Si diodes composed in a 4 x 4 array and a conventional NaI(Tl) detector were carried out simultaneously. Fourteen separate pairs of measurements were performed in 3 dogs. When the Si...

  9. Radiant Power Degradation of Silicon-Doped Gallium Arsenide and Gallium Aluminum Arsenide Infrared Light-Emitting Diodes.

    Science.gov (United States)

    1987-05-01

    measured using a United Detector Technology Model 61AC (UDT61AC) Optometer , a United Detector Technol- ogy Model 2575R (UDT2575R) Integrating Sphere...the opening of the integrating sphere. Be sure both the integrating sphere and the diode are stationary. 3. Check the optometer . Be sure the CH 1...to 10-2. (You have now compensated the optometer for ambient light). The display may still read something on the 10-2 MULTIPLIER setting. If it does

  10. Digital pulse-shape analysis with a TRACE early silicon prototype

    Energy Technology Data Exchange (ETDEWEB)

    Mengoni, D., E-mail: daniele.mengoni@pd.infn.it [Dipartimento di Fisica e Astronomia, Università di Padova, via F. Marzolo, 8 - 35131 Padova (Italy); INFN Padova, via Marzolo 8 - 35131 Padova (Italy); Dueñas, J.A. [Departamento de Física Aplicada, FCCEE Universidad de Huelva, 21071 Huelva (Spain); Assié, M. [Institut de Physique Nucléaire, Université Paris-Sud-11-CNRS/IN2P3, 91406 Orsay (France); Boiano, C. [INFN Milano, Via Celoria, 16 - 20133 Milano (Italy); John, P.R. [Dipartimento di Fisica e Astronomia, Università di Padova, via F. Marzolo, 8 - 35131 Padova (Italy); INFN Padova, via Marzolo 8 - 35131 Padova (Italy); Aliaga, R.J. [Universidad Politécnica de Valencia, CSIC, CIEMAT, I3M, Valencia (Spain); Beaumel, D. [Institut de Physique Nucléaire, Université Paris-Sud-11-CNRS/IN2P3, 91406 Orsay (France); Capra, S. [INFN Milano, Via Celoria, 16 - 20133 Milano (Italy); Gadea, A. [Instituto de Fisica Corpuscular, CSIC – Universitat de Valencia, Paterna, Valencia (Spain); Gonzáles, V. [Departamento de Ingeniería Electrónica, Universitat de Valencia, Burjassot, Valencia (Spain); Gottardo, A. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Legnaro (Padova) (Italy); Grassi, L. [Dipartimento di Fisica e Astronomia, Università di Padova, via F. Marzolo, 8 - 35131 Padova (Italy); INFN Padova, via Marzolo 8 - 35131 Padova (Italy); Herrero-Bosch, V. [Universidad Politécnica de Valencia, CSIC, CIEMAT, I3M, Valencia (Spain); Houdy, T. [Faculté des Sciences, Université Paris-Sud, 91405 Orsay (France); and others

    2014-11-11

    A highly segmented silicon-pad detector prototype has been tested to explore the performance of the digital pulse shape analysis in the discrimination of the particles reaching the silicon detector. For the first time a 200 μm thin silicon detector, grown using an ordinary floating zone technique, has been shown to exhibit a level discrimination thanks to the fine segmentation. Light-charged particles down to few MeV have been separated, including their punch-through. A coaxial HPGe detector in time coincidence has further confirmed the quality of the particle discrimination.

  11. Digital pulse-shape analysis with a TRACE early silicon prototype

    Science.gov (United States)

    Mengoni, D.; Dueñas, J. A.; Assié, M.; Boiano, C.; John, P. R.; Aliaga, R. J.; Beaumel, D.; Capra, S.; Gadea, A.; Gonzáles, V.; Gottardo, A.; Grassi, L.; Herrero-Bosch, V.; Houdy, T.; Martel, I.; Parkar, V. V.; Perez-Vidal, R.; Pullia, A.; Sanchis, E.; Triossi, A.; Valiente Dobón, J. J.

    2014-11-01

    A highly segmented silicon-pad detector prototype has been tested to explore the performance of the digital pulse shape analysis in the discrimination of the particles reaching the silicon detector. For the first time a 200 μm thin silicon detector, grown using an ordinary floating zone technique, has been shown to exhibit a level discrimination thanks to the fine segmentation. Light-charged particles down to few MeV have been separated, including their punch-through. A coaxial HPGe detector in time coincidence has further confirmed the quality of the particle discrimination.

  12. Travelling-solvent floating-zone growth of the dilutely Co-doped spin-ladder compound Sr14(Cu, Co)24O41

    Science.gov (United States)

    Bag, Rabindranath; Karmakar, Koushik; Singh, Surjeet

    2017-01-01

    We present here crystal growth of dilutely Co-doped spin-ladder compounds Sr14(Cu 1-x, Cox)24O41 (x = 0, 0.01, 0.03, 0.05, 0.1) using the Travelling Solvent Floating Zone (TSFZ) technique associated with an image furnace. We carried out detailed microstructure and compositional analysis. The microstructure of the frozen-in FZ revealed two bands: a lower band consisting of well-aligned single-crystalline stripes of the phase Sr14(Cu, Co)24O41 embedded in the eutectic mixture of composition SrO 18% and (Cu, Co)O 82%; and an upper band consisting of a criss-crossed pattern of these stripes. These analyses were also employed to determine the distribution coefficient of the dopants in Sr14Cu24O41. The distribution coefficient turned out to be close to 1, different from Sr2CuO3 reported previously where Co tend to accumulate in the molten zone. Direct access to the composition of the frozen-in zone eliminated any previous ambiguities associated with the composition of the peritectic point of Sr14Cu24O41; and also the eutectic point in the binary SrO-CuO phase diagram. The lattice parameters show an anisotropic variation upon Co-doping with parameters a and b increasing, c decreasing; and with an overall decrease of the unit cell volume. Magnetic susceptibility measurements were carried out on the pristine and the Co-doped crystals along the principal crystallographic axes. The spin susceptibility of the x = 0.01 crystal exhibits a strong anisotropy, which is in stark contrast with the isotropic behaviour of the pristine crystal. This anisotropy seems to arise from the intradimer exchange interaction as inferred from the anisotropy of the dimer contribution to the susceptibility of the Co-doped crystal. The Curie-tail in the magnetic susceptibility of Sr14(Cu 1-x, Cox)24O41 (x = 0, 0.01, 0.03, 0.05, 0.1) crystals (field applied parallel to the ladder) was found to scale with Co-doping - the scaling is employed to confirm a homogeneous distribution of Co in a x = 0

  13. Processing of Radiation Hard Particle Detectors on Czochralski Silicon

    CERN Document Server

    Tuovinen, Esa

    2012-01-01

    The purpose of this work was to study the radiation hardness of particle detectors. Silicon detectors are cost-effective andhave an excellent spatial resolution. Therefore, they are widely used in many high-energy physics experiments. It is knownthat oxygen improves the radiation hardness of silicon detectors. The natural way to have a high concentration of oxygen insilicon is to use magnetic Czochralski silicon (MCz-Si). MCz-Si has intrinsically a relatively uniform and high level ofoxygen (5x10^17 cm^3) compared to regular float-zone silicon (FZ-Si). Such a level is hard to attain with other methods,namely the diffusion oxygenation of float-zone silicon.In the Large Hadron Collider (LHC) and its potential upgrade, the luminosity and the fluencies of fast hadrons can be sohigh that detectors made of standard detector-grade FZ-Si might not survive the planned operating period. MCz-Si offers animprovement to the lifetime of particle detectors through improved radiation hardness.This thesis takes a process-orie...

  14. Chemically Modulated Graphene Diodes

    OpenAIRE

    Kim, Hye-young; Lee, Kangho; McEvoy, Niall; Yim, Chanyoung; Duesberg, Georg S.

    2013-01-01

    PUBLISHED We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases. Parameter changes in the diode can be correlated with charge transfer from various adsorbates. The GDS allows for investigation and tuning of extrinsic doping of graphene with great reliability. The demonstrated recovery and long-term stability qualifies the GDS as a new platform for gas, environmental, and biocom...

  15. A miniature silicon diode matrix detector for in vivo measurement of 133Xe disappearance following local tissue injection

    DEFF Research Database (Denmark)

    Bangsgaard Bendtsen, Katja Maria; Svendsen, J H; Rasmussen, H B

    1992-01-01

    A variety of biological processes can be studied from the washout of compounds labelled with a gamma emitter. Conventional systems for measurement of gamma radiation can detect count rates at both the low and high energy range of the indicator in question, 133Xe. However, silicon (Si) photodiodes...

  16. Gamma radiation processing dosimetry with commercial silicon diodes; Dosimetria de processos de irradiacao gama com diodos comerciais de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, Danilo Cardenuto

    2009-07-01

    This work envisages the development of dosimeters based on Si diodes for gamma radiation dosimetry from 1 Gy up to 100 Gy. This dose range is frequently utilized in radiation processing of crystal modifications, polymers crosslinking and biological studies carried out in the Radiation Technology Center at IPEN-CNEN/SP. The dosimeter was constructed by a commercial SFH00206 (Siemens) Si diode, operating in a photovoltaic mode, whose electrical characteristics are suitable for this application. The current generated in the device by the Cobalt-60 gamma radiation from the Irradiators types I and II was registered with a digital electrometer and stored during the exposure time. In all measurements, the current signals of the diode registered as a function of the exposure time were very stable. Furthermore, the device photocurrent was linearly dependent on the dose rate within a range of 6.1x10{sup -2} Gy/min up to 1.9x10{sup 2} Gy/min. The calibration curves of the dosimeters, e.g., the average charge registered as a function of the absorbed dose were obtained by the integration of the current signals as a function of the exposure time. The results showed a linear response of the dosimeter with a correlation coefficient better than 0.998 for total absorbed dose up to 120 Gy. Finally, due to the small experimental errors 5 % it was also possible to measure the transit dose due to the movement of the Cobalto- 60 radioactive sources in irradiation facilities used in this work. (author)

  17. Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon.

    Science.gov (United States)

    Nguyen, Hieu Pham Trung; Cui, Kai; Zhang, Shaofei; Fathololoumi, Saeed; Mi, Zetian

    2011-11-04

    We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ~ 200 A cm(-2).

  18. Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

    Energy Technology Data Exchange (ETDEWEB)

    Dierickx, B.; Wouters, D.; Willems, G.; Alaerts, A.; Debusschere, I.; Simoen, E.; Vlummens, J.; Akimoto, H.; Claeys, C.; Maes, H.; Hermans, L. (IMEC, Leuven (Belgium)); Heijne, E.H.M.; Jarron, P.; Anghinolfi, F.; Campbell, M.; Pengg, F.X.; Aspell, P. (CERM, Geneve (Switzerland)); Bosisio, L.; Focardi, E.; Forti, F.; Kashigin, S. (INFN sezione di Pisa, Pisa (Italy)); Mekkaoui, A.; Habrard, M.C.; Sauvage, D. (CPPM, Marseille (France)); Delpierre, P. (Coll. de France/IN2P3-CNRS, Paris (France)); Detector R and D Collaboration

    1993-08-01

    A new approach to monolithic pixel detectors, based on SOI wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. This paper reports on the used fabrication methods, and on the results of the electrical evaluation of the SOI - MOSFET devices and of the detector structures fabricated in the bulk. The leakage current of the high-resistivity PIN-diodes was kept in the order of 5 to 10 aA/cm[sup 2]. The SOI preparation processes considered (SIMOX and ZMR) produced working electronic circuits and appear to be compatible with the fabrication of detectors to suitable quality.

  19. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  20. Material and detector properties of cadmium manganese telluride (Cd{sub 1−x}Mn{sub x}Te) crystals grown by the modified floating-zone method

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, A., E-mail: hossain@bnl.gov; Gu, G.D.; Bolotnikov, A.E.; Camarda, G.S.; Cui, Y.; Roy, U.N.; Yang, G.; Liu, T.; Zhong, R.; Schneeloch, J.; James, R.B.

    2015-06-01

    We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd{sub 1−x}Mn{sub x}Te; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd{sub 1−x}Mn{sub x}Te crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results show that CMT crystals grown by the modified floating zone method apparently are free from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.

  1. Structural and spectroscopic characterization of Ce0.4Zr0.6O2 crystalline rods grown by the Laser Floating Zone method

    Directory of Open Access Journals (Sweden)

    Várez, A.

    2008-06-01

    Full Text Available A structural and spectroscopic characterization of crystalline rods of Ce0.4Zr0.6O2 grown by the laser floating zone (LFZ method is presented. A precursor rod of Ce0.4Zr0.6O2 composition was sintered at 1500 ºC in air atmosphere and then processed by the LFZ technique with a CO2 laser. The processed material was characterized by XRD, SEM and Raman spectroscopy. In the as-grown, dark-color processed rod, the Raman spectrum evolves radially from a t’-like one, corresponding to Ce0.37Zr0.63O2 composition, at the edge of the rod, to a very broad and weak, cubic-like one, at the center. The degree of cerium reduction and oxygen non-stoichiometry were determined through measurements of the electronic Raman spectrum of Ce3+. A strong Ce3+ signal was found at the core of the rod, indicating strong reduction, whereas no Ce3+ signal was detected at the edge. To restore oxygen and Ce4+ content a section of the fiber was reoxidized at 620 ºC for 24 h. A very homogeneous spectrum was found in the reoxidized sample, that was assigned to a t’-phase of composition Ce0.42Zr0.58O2.Presentamos una caracterización estructural y espectroscópica de fibras cristalinas de Ce0.4Zr0.6O2 crecidas mediante fusión zonal asistida por láser (LFZ. Una barra del material precursor, de composición Ce0.4Zr0.6O2, fue sinterizada a 1500 ºC en atmósfera de aire y después procesada por LFZ con un láser de CO2. El material procesado fue caracterizado por difracción de rayos X, microscopía electrónica de barrido y espectroscopía Raman. En la fibra recién procesada, de color gris oscuro, el espectro Raman varía radialmente desde un espectro de tipo t’, correspondiente a una composición Ce0.37Zr0.63O2, en el borde de la fibra, hasta un espectro muy ensanchado y débil, de aspecto cúbico, en el centro. El grado de reducción del cerio y la no estequiometría del oxígeno se determinaron a través de las medidas del Raman electrónico del Ce3+. La señal de Ce3

  2. Research and development on a sub 100 PICO second time-of-flight system based on silicon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Y.; Hirsch, A.; Hauger, A.; Scharenberg, R.; Tincknell, M. [Purdue Univ., West Lafayette, IN (United States); Rai, G. [Lawrence Berkeley Lab., CA (United States)

    1991-12-31

    Particle identification requires a momentum measurement and a second independent determination either energy loss (dE/dx) or time of flight (TOF). To cover a momentum range from 0.1 GeV/c to 1.5 GeV/c in the STAR detector requires both the dE/dx and TOF techniques. This research is designed to develop the avalanche diode (AVD) detectors for TOF systems and evaluate their performance. The test of a small prototype system would be carried out at Purdue and at accelerator test beam sites. The Purdue group has developed a complete test setup for evaluating the time resolution of the AVD`s which includes fast-slow electronic channels, CAMAC based electronic modules and a temperature controlled environment. The AVDs also need to be tested in a 0.5 tesla magnetic field. The Purdue group would augment this test set up to include a magnetic field.

  3. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Science.gov (United States)

    Hazari, Arnab; Aiello, Anthony; Ng, Tien-Khee; Ooi, Boon S.; Bhattacharya, Pallab

    2015-11-01

    III-nitride nanowire diode heterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ˜3 × 1010 cm-2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10-17 cm2, respectively. The peak emission is observed at ˜1.2 μm.

  4. Internal electric field profile in thin film hydrogenated amorphous silicon diodes studied by the transient-null-current method

    Energy Technology Data Exchange (ETDEWEB)

    Han, D.; Yeh, C.; Wang, K.; Wang, Q.

    1997-07-01

    The authors demonstrate that the internal field of a thin a-Si:H pin solar cells can be measured using the transient-null-current method. This method was previously developed to measure the internal field profile in a-Si alloy Schottky barrier. The internal electric field profile was determined by measuring the forward-bias voltages that tune the transient photocurrents generated by a pulsed laser at various wavelengths to zero. They adopt the same technique to a-Si:H p-i-n solar cells. In the case of p-i-n structure, they need to consider both space charge contributed by photogenerated carriers and carrier recombination which disturb the internal field. They use two critical conditions to minimize these effects. (1) To limit the contribution of photocarriers to space-charge distribution, the total charge collected is less than 10{sup {minus}10} C per pulse, and a repetition rate 1 Hz is used to ensure that the diode remains close to its equilibrium state, (2) The measuring time window is about 1--6 {micro}s following the displacement current. Typically the RC constant of diode is <1 {micro}s and the rise time of the forward-bias recombination current is 6.0 x {micro}s. They apply the signal average to process the forward-bias voltage. The error is within {+-}0.05 V. With this technique they can study the effect of variety of structure design or processing on the device performance.

  5. Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

    Science.gov (United States)

    Brouzet, V.; Salem, B.; Periwal, P.; Rosaz, G.; Baron, T.; Bassani, F.; Gentile, P.; Ghibaudo, G.

    2015-11-01

    In this paper, we present the fabrication and electrical characterization of a MOS gated diode based on axially doped silicon nanowire (NW) p-i-n junctions. These nanowires are grown by chemical vapour deposition (CVD) using the vapour-liquid-solid (VLS) mechanism. NWs have a length of about 7 \\upmu {m} with 3 \\upmu {m} of doped regions (p-type and n-type) and 1 \\upmu {m} of intrinsic region. The gate stack is composed of 15 nm of hafnium dioxide ({HfO}2), 80 nm of nickel and 120 nm of aluminium. At room temperature, I_{{on}} =-52 {nA}/\\upmu {m} (V_{{DS}}=-0.5 {V}, V_{{GS}}=-4 {V}), and an I_{{on}}/I_{{off}} ratio of about 104 with a very low I_{{off}} current has been obtained. Electrical measurements are carried out between 90 and 390 K, and we show that the I on current is less temperature dependent below 250 K. We also observe that the ON current is increasing between 250 and 390 K. These transfer characteristics at low and high temperature confirm the tunnelling transport mechanisms in our devices.

  6. Effects of neutral particle beam on nano-crystalline silicon thin films, with application to thin film transistor backplane for flexible active matrix organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jin Nyoung; Song, Byoung Chul; Lee, Dong Hyeok [Dept. of Display and Semiconductor Physics, Korea University, Chungnam (Korea, Republic of); Yoo, Suk Jae; Lee, Bonju [National Fusion Research Institute, 52, Yuseong-Gu, Deajeon, 305-333 (Korea, Republic of); Hong, MunPyo, E-mail: goodmoon@korea.ac.kr [Dept. of Display and Semiconductor Physics, Korea University, Chungnam (Korea, Republic of)

    2011-08-01

    A novel deposition process for nano-crystalline silicon (nc-Si) thin films was developed using neutral beam assisted chemical vapor deposition (NBaCVD) technology for the application of the thin film transistor (TFT) backplane of flexible active matrix organic light emitting diode (AMOLED). During the formation of a nc-Si thin film, the energetic particles enhance nano-sized crystalline rather microcrystalline Si in thin films. Neutral Particle Beam (NPB) affects the crystallinity in two ways: (1) NPB energy enhances nano-crystallinity through kinetic energy transfer and chemical annealing, and (2) heavier NPB (such as Ar) induces damage and amorphization through energetic particle impinging. Nc-Si thin film properties effectively can be changed by the reflector bias. As increase of NPB energy limits growing the crystalline, the performance of TFT supports this NPB behavior. The results of nc-Si TFT by NBaCVD demonstrate the technical potentials of neutral beam based processes for achieving high stability and reduced leakage in TFT backplanes for AMOLEDs.

  7. Direct observation of vacancy in silicon using sub-Kelvin ultrasonic measurements

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Terutaka [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan)]. E-mail: goto@phys.sc.niigata-u.ac.jp; Yamada-Kaneta, Hiroshi [Fujitsu Laboratories Ltd., Morinisato-Wakamiya, Atsugi 243-0197 (Japan); Saito, Yasuhiro [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan); Nemoto, Yuichi [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan); Sato, Koji [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan); Kakimoto, Koichi [Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580 (Japan); Nakamura, Shintaro [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

    2006-10-15

    We carried out sub-Kelvin ultrasonic measurements for observation of vacancies in crystalline silicon. The longitudinal elastic constants of non-doped and B-doped floating zone (FZ) silicon crystals in commercial base revealed low-temperature elastic softening below 20 K. The applied magnetic fields turns the softening of the B-doped FZ silicon to a temperature-independent behavior, while the fields up to 16 T at base temperature 20 mK make no effect on the softening of the non-doped FZ silicon. This result means that the vacancy accompanying the non-magnetic charge state V{sup 0} in the non-doped silicon and the magnetic V{sup +} in the B-doped silicon is responsible for the low-temperature softening through the Jahn-Teller effect. The direct observation of the vacancy using the sub-Kelvin ultrasonic measurements advances point defects controlling in silicon wafers and semiconductor devices.

  8. III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hazari, Arnab; Aiello, Anthony; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Ng, Tien-Khee; Ooi, Boon S. [Division of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

    2015-11-09

    III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

  9. A miniature silicon diode matrix detector for in vivo measurement of 133Xe disappearance following local tissue injection

    DEFF Research Database (Denmark)

    Bendtsen, K; Svendsen, Jesper Hastrup; Rasmussen, H B

    1992-01-01

    have the capability of measuring the lowest energies (25-40 keV) of gamma and x-ray emitters with sufficient efficiency when applied on the skin surface and close to the indicator depot. The purpose of the present study was firstly to evaluate a portable Si photodiode matrix detector system, composed......A variety of biological processes can be studied from the washout of compounds labelled with a gamma emitter. Conventional systems for measurement of gamma radiation can detect count rates at both the low and high energy range of the indicator in question, 133Xe. However, silicon (Si) photodiodes...... of 16 photodiodes, for in vivo measurement of disappearance rate constants of 133Xe following injection into subcutaneous (SC) or skeletal muscle (SM) tissues as compared with a stationary sodium iodide single crystal detector. Secondly, from these results, to evaluate the contribution from intra...

  10. Studies of the radiation hardness of oxygen-enriched silicon detectors

    CERN Document Server

    Ruzin, A; Glaser, M; Lemeilleur, F

    1999-01-01

    Detectors of high-energy particles sustain substantial structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long 'lifetime' detectors are required. This work report s about radiation hardness of silicon P-I-N devices fabricated from oxygen-enriched, high-resistivity material. The high and nearly uniform concentration of oxygen in float-zone silicon has been achie ved by diffusion of oxygen from SiO2 layers.

  11. Investigation of Backside Textures for Genesis Solar Wind Silicon Collectors

    Science.gov (United States)

    Gonzalez, C. P.; Burkett, P. J.; Rodriguez, M. C.; Allton, J. H.

    2014-01-01

    Genesis solar wind collectors were comprised of a suite of 15 types of ultrapure materials. The single crystal, pure silicon collectors were fabricated by two methods: float zone (FZ) and Czochralski (CZ). Because of slight differences in bulk purity and surface cleanliness among the fabrication processes and the specific vendor, it is desirable to know which variety of silicon and identity of vendor, so that appropriate reference materials can be used. The Czochralski method results in a bulk composition with slightly higher oxygen, for example. The CZ silicon array wafers that were Genesis-flown were purchased from MEMC Electronics. Most of the Genesis-flown FZ silicon was purchased from Unisil and cleaned by MEMC, although a few FZ wafers were acquired from International Wafer Service (IWS).

  12. Current status of silicon materials research for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ciszek, T F

    1985-04-01

    The desire for high solar cell efficiencies has been a strong factor in determining the course of recent silicon crystal growth research efforts for photovoltaics. This review, therefore, focuses on single-crystal, dislocation-free ingot growth methods (Czochralski growth, float zoning, and cold crucible growth) and on sheet growth technologies, generally multicrystalline, that have achieved moderately high (>13.5%) laboratory-scale efficiencies. These include dendritic web growth, growth from capillary dies, edge-supported pulling, ribbon-against-drop growth, and a recent technique termed crucible-free horizontal growth. Silicon ribbon crystals provide a favorable geometry and require no wafering, but they contain defects that limit solar cell performance. Growth processes, their current status, and cell efficiencies are discussed. Silicon material process steps before and after crystal growth are described, and the advantages of silicon are presented.

  13. DC characteristics of the SiC Schottky diodes

    National Research Council Canada - National Science Library

    W Janke; A Hapka; M Oleksy

    2011-01-01

      DC characteristics of the SiC Schottky diodes The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper...

  14. Photoluminescence study of 1018 meV defect lines from ion-implanted silicon

    CERN Document Server

    Lee, H S; Seong, E Z; Kim, S M; Lim, H J

    1999-01-01

    We investigated the defects of ion-implanted silicon with boron and argon ions using photoluminescence method. The 1018 meV line, so called I sub 1 line, and its phonon side bands were observed in both boron- and argon-implanted silicon crystals. In argon-implanted silicon crystals, we observed 1009 meV line (I sub r - Ar) and its phonon side bands which arose from argon-I sub 1 complex in addition to the splitting of the I sub 1 line. Annealing temperature dependence of the intensities of the I sub 1 and I sub 1 -Ar lines in argon-implanted silicon was very similar for both Czochralski and float zone silicon crystals whereas that of boron-implanted silicon was very different between the two growing methods. We discussed on the origin of the defects responsible for the I sub 1 and I sub 1 - Ar lines.

  15. Floating zone growth and magnetic and specific heat properties of La0.67Ca0.33Mn1-xFexO3 (x=0.00, 0.04) single crystals

    Institute of Scientific and Technical Information of China (English)

    Kou Zhi-Qi; Ma Xiao; Di Nai-Li; Li Qing-An; Cheng Zhao-Hua

    2005-01-01

    Single crystals of La0.67Ca0.33MnO3 and La0.67Ca0.33Mn0.96Fe0.04O3 were obtained by floating zone method.Laue diffraction pattern and rocking curve of the single crystals show that their quality is good. The magnetic behaviours of these compounds have been studied. Fe doping significantly depresses the magnetic contribution to the total specific heat Cp, but slightly influences the lattice contribution at temperatures above 50K. The peak of CP shifts towards high temperatures with increasing magnetic field. Both single crystals exhibit the first-order magnetic transition around the Curie temperature.

  16. Pixel structures to compensate nonuniform threshold voltage and mobility of polycrystalline silicon thin-film transistors using subthreshold current for large-size active matrix organic light-emitting diode displays

    Science.gov (United States)

    Na, Jun-Seok; Kwon, Oh-Kyong

    2014-01-01

    We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from -2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.

  17. Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators

    Science.gov (United States)

    Nihei, Shinichi; Sato, Eiichi; Hamaya, Tatsuki; Numahata, Wataru; Kogita, Hayato; Kami, Syouta; Arakawa, Yumeka; Oda, Yasuyuki; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya

    2014-12-01

    To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current-voltage (I-V) amplifier, a voltage-voltage (V-V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I-V and V-V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu2(SiO4)O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)-Si-PIN, and an LSO-Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70 kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)-Si-PIN and the LSO-Si-PIN at the measurement conditions.

  18. Silicon Materials Task of the Low Cost Solar Array Project (Phase II). Effect of impurities and processing on silicon solar cells. Phase II. Summary and eleventh quarterly report

    Energy Technology Data Exchange (ETDEWEB)

    Hopkins, R.H.; Davis, J.R.; Blais, P.D.; Rohatgi, A.; Rai-Choudhury, P.; Hanes, M.H.; McCormick, J.R.

    1978-07-01

    The effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells were investigated. A variety of aspects including thermal treatments, crystal growth rate, base doping concentration (low resistivity), base doping type (n vs. p), grain boundary structure, and carbon/oxygen-metal interactions (float zone vs Czochralski growth) were studied. The effects of various metallic impurities were studied, introduced singly or in combination into Czochralski, float zone and polycrystalline silicon ingots and into silicon ribbons grown by the dendritic web process. The totality of the solar cell data (comprising over 4000 cells) indicate that impurity-induced performance loss is primarily due to reduction in base diffusion length. Based on this assumption an analytical model has been developed which predicts cell performance as a function of metal impurity content. The model has now been verified for p-base material by correlating the projected and measured performance of solar cells made on 19 ingots bearing multiple impurities.

  19. On the Neel temperature and magnetic domain wall movements of Ga{sub 2−x}Fe{sub x}O{sub 3} single crystals grown by floating-zone technique

    Energy Technology Data Exchange (ETDEWEB)

    Srimathy, B. [Crystal Growth Centre, Anna University, Chennai (India); Bhaumik, Indranil [Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore (India); Ganesamoorthy, S. [X-ray Scattering and Crystal Growth Section, Material Science Group, IGCAR, Kalpakkam, Chennai (India); Bhatt, R.; Karnal, A.K. [Laser Materials Development and Devices Division, Raja Ramanna Centre for Advanced Technology, Indore (India); Kumar, J., E-mail: marsjk@gmail.com [Crystal Growth Centre, Anna University, Chennai (India)

    2014-03-25

    Highlights: • Transformation to softer magnets with increasing Fe compositions is evident. • Behavior of magnetization curves reveals the movement of magnetic domain walls. • Hopping conduction mechanism is apparent from the dielectric spectra. -- Abstract: Single crystals of piezoelectric ferrimagnet, Gallium ferrite Ga{sub 2−x}Fe{sub x}O{sub 3} (x = 0.8, 1.0 and 1.2) were grown by optical floating zone technique. Phase confirmation was done by X-ray diffraction and the lattice parameters were determined via Rietveld refinement which shows a linear variation. Composition of the grown crystals was confirmed by energy dispersive X-ray spectra. Temperature and frequency dependent dielectric spectra have been used to explain the conduction mechanism in Ga{sub 2−x}Fe{sub x}O{sub 3} single crystals. Dielectric constant of 1610 was obtained for GaFeO{sub 3} (x = 1) and increases with x. With increasing iron concentration, a linear increase in T{sub N} is observed and the crystals transform as softer magnets.

  20. Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

    CERN Document Server

    Fretwurst, E.; Stahl, J.; Pintilie, I.

    2002-01-01

    The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising re...

  1. Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Levi, D.; Iwaniczko, E.; Page, M.; Branz, H.; Wang, T.

    2006-05-01

    We use in-situ and ex-situ spectroscopic ellipsometry to characterize the optical, electronic, and structural properties of individual layers and completed silicon heterojunction devices. The combination of in-situ measurements during thin film deposition with ex-situ measurements of completed devices allows us to understand both the growth dynamics of the materials and the effects of each processing step on material properties. In-situ ellipsometry measurements enable us to map out how the optical properties change with deposition conditions, pointing the way towards reducing the absorption loss and increasing device efficiency. We use the measured optical properties and thickness of the i-, n-, and p-layers in optical device modeling to determine how the material properties affect device performance. Our best solar energy conversion efficiencies are 16.9% for a non-textured, single-sided device with an aluminum back surface field contact on a p-type float zone silicon wafer, and 17.8% for a textured double-sided device on a p-type float zone silicon wafer.

  2. Laser process for extended silicon thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hessmann, M.T., E-mail: hessmann@zae.uni-erlangen.de [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Kunz, T.; Burkert, I.; Gawehns, N. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Schaefer, L.; Frick, T.; Schmidt, M. [Bayerisches Laserzentrum, Konrad-Zuse-Str 2-6, 91052 Erlangen (Germany); Meidel, B. [Schott Solar AG, Carl-Zeiss-Strasse 4, 63755 Alzenau (Germany); Auer, R. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Brabec, C.J. [Bavarian Center for Applied Energy Research, Am Weichselgarten 7, 91058 Erlangen (Germany); Chair VI - Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstrasse 7, 91058 Erlangen (Germany)

    2011-10-31

    We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

  3. Construction of an X-ray detecting module and its application to relative-sensitivity measurement using a silicon PIN diode in conjunction with short-decay-time scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Nihei, Shinichi [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Sato, Eiichi, E-mail: dresato@iwate-med.ac.jp [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Hamaya, Tatsuki; Numahata, Wataru; Kogita, Hayato; Kami, Syouta; Arakawa, Yumeka; Oda, Yasuyuki [Department of Physics, Iwate Medical University, 2-1-1 Nishitokuta, Yahaba, Iwate 028-3694 (Japan); Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya [Department of Surgery, Toho University Ohashi Medical Center, 2-17-6 Ohashi, Meguro, Tokyo 153-8515 (Japan)

    2014-12-11

    To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current–voltage (I–V) amplifier, a voltage–voltage (V–V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I–V and V–V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu{sub 2}(SiO{sub 4})O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)–Si-PIN, and an LSO–Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70 kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)–Si-PIN and the LSO–Si-PIN at the measurement conditions. - Highlights: • X-ray detecting module was developed to measure relative sensitivities of detectors. • Event-pulse-height spectra were measured to analyze X-ray-electric conversion effect. • Total photon number substantially decreased using scintillation detectors. • Scintillation effects using YAP(Ce) and LSO were quite low. • Si-PIN sensitivity without scintillators was quite high.

  4. 基于自相位调制效应的硅基中红外全光二极管%All-optical diode in mid-infrared waveband based on self-phase modulation effect in silicon ring resonator

    Institute of Scientific and Technical Information of China (English)

    张学智; 冯鸣; 张心正

    2013-01-01

    Nonreciprocal transmission device is one of the fundamental elements in integrated optics, and mid-infrared is a widely used waveband in many areas, such as remote sensing or spectrum analysis. An all-optical diode based on self-phase modulation (SPM) effect is numerically demonstrated in mid-infrared waveband. The diode consists of a linear waveguide and double silicon ring resonators. The nonreciprocal transmission ratio can be more than 20 dB in a power range between 0.5 mW and 20 mW, while the transmission loss in forward direction is less than 10 dB. Moreover, the influences of linear absorption coefficient of ring resonators and the bi-stability effect on the performance of the diode are discussed.%信号单向导通器件是集成光学中一种重要的基本元件,而中红外波段在空间遥感,光谱分析等领域都有极其重要的应用.本文提出了一种由两个硅基微环谐振腔构成,基于自相位调制效应的硅基中红外全光二极管,并利用数值模拟的方法进行了分析.结果表明,在输入光强为0.5 mW到20 mW之间时,其非互易导通率可以大于20 dB,且正向透过时损耗小于10 dB.此外,本文还讨论了环形谐振腔中的线性吸收率,以及双稳态效应对结果的影响.

  5. Fabrication of Silicon Based Novel Structure JBS Diode with Breakdown Voltage above 300 V%300V以上硅基新型JBS肖特基二极管的制备

    Institute of Scientific and Technical Information of China (English)

    王一帆; 王朝林; 刘肃; 何少博

    2011-01-01

    为了在保留传统肖特基二极管正向压降低、电流密度大优点的基础上,使其反向击穿电压提高到了300 v以上,我们采用硅材料做为衬底,肖特基结区采用蜂房结构,终端采用两道场限环结构加一道切断环结构,所制备的肖特基二极管在正向电流10A时,正向压降仅为0.79 V;同时在施加300 V反向电压时,反向漏电流在5μA以下.%To retain the advantages of traditional Schottky diodes, such as high current density under low forward voltage and improve their breakdown voltage to above 300 V, we fabricated silicon-based novel structure JBS diodes. Its Schottky barrier area is a honey comb structure, and its terminal is formed by two floating field limiting rings(FLRs) plus a cutoff ring structure. Its forward voltage-drop is only 0. 79 V under 10 A current, while its leakage current is less than 5 (xA when 300 V reverse voltage is applied.

  6. SiC-based Schottky diode gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, G.W.; Neudeck, P.G.; Chen, L.Y. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; Knight, D. [Cortez/NASA Lewis Research Center, Cleveland, OH (United States); Liu, C.C.; Wu, Q.H. [Electronics Design Center, Case Western Reserve Univ., Cleveland, OH (United States)

    1998-08-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor array for versatile high temperature gas sensing applications. (orig.) 6 refs.

  7. SiC-Based Schottky Diode Gas Sensors

    Science.gov (United States)

    Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

    1997-01-01

    Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

  8. Iridium-related deep levels in n-type silicon

    CERN Document Server

    Bollmann, J; Weber, J

    2000-01-01

    Iridium-related deep levels in n-type silicon were studied by deep level transient spectroscopy (DLTS). Two different sets of samples were used which differ in the Ir-doping process. Stable Ir isotopes were introduced in the melt during the floating-zone growth process. Other samples were implanted with radioactive mercury isotopes, which decay via gold and platinum to iridium or osmium. In these samples an identification of Ir-related levels from the known half-life of the isotopes is possible. Two dominant levels at E/sub c/-0.28 eV and E /sub c/-0.57 eV are assigned to isolated substitutional Ir. Two other levels at E/sub c/-0.17 eV and E/sub c/-0.45 eV are identified as iridium-hydrogen complexes containing one or two hydrogen atoms, respectively. (16 refs).

  9. Reduction of Efficiency Droop in Semipolar (1101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

    Science.gov (United States)

    Chiu, Ching-Hsueh; Lin, Da-Wei; Lin, Chien-Chung; Li, Zhen-Yu; Chang, Wei-Ting; Hsu, Hung-Wen; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; Liao, Wei-Tsai; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Sawaki, Nobuhiko

    2011-01-01

    We present a study of semi-polar (1101) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

  10. Design of 340 GHz 2× and 4× Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology

    Directory of Open Access Journals (Sweden)

    Chao Liu

    2015-05-01

    Full Text Available This paper presents the design of terahertz 2× and 4× sub-harmonic down-mixers using Schottky Barrier Diodes fabricated in standard 0.13 μm SiGe BiCMOS technology. The 340 GHz sub-harmonic mixers (SHMs are designed based on anti-parallel-diode-pairs (APDPs. With the 2nd and 4th harmonic, local oscillator (LO frequencies of 170 GHz and 85 GHz are used to pump the two 340 GHz SHMs. With LO power of 7 dBm, the 2× SHM exhibits a conversion loss of 34.5–37 dB in the lower band (320–340 GHz and 35.5–41 dB in the upper band (340–360 GHz; with LO power of 9 dBm, the 4× SHM exhibits a conversion loss of 39–43 dB in the lower band (320–340 GHz and 40–48 dB in the upper band (340–360 GHz. The measured input 1-dB conversion gain compression point for the 2× and 4× SHMs are −8 dBm and −10 dBm at 325 GHz, respectively. The simulated LO-IF (intermediate frequency isolation of the 2× SHM is 21.5 dB, and the measured LO-IF isolation of the 4× SHM is 32 dB. The chip areas of the 2× and 4× SHMs are 330 μm × 580 μm and 550 μm × 610 μm, respectively, including the testing pads.

  11. Radiation damage in silicon. Defect analysis and detector properties

    Energy Technology Data Exchange (ETDEWEB)

    Hoenniger, F.

    2008-01-15

    Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

  12. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    has been an obstacle for a simple realization of electro-optic modulators, and its indirect band gap has prevented the realization of efficient silicon light emitting diodes and lasers. Still, significant progress has been made in the past few years. Electro-optic modulators based on the free carrier...

  13. Vacancies in defect-free zone of point-defect-controlled CZ silicon observed by low-temperature ultrasonic measurements

    Energy Technology Data Exchange (ETDEWEB)

    Yamada-Kaneta, Hiroshi [Atsugi Laboratories, Fujitsu Ltd., Morinosato-Wakamiya, Atsugi 243-0197 (Japan)]. E-mail: kaneta.hiroshi@jp.fujitsu.com; Goto, Terutaka [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan); Saito, Yasuhiro [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan); Nemoto, Yuichi [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan); Sato, Koji [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan); Kakimoto, Koichi [Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580 (Japan); Nakamura, Shintaro [Center for Low-Temperature Science, Tohoku University, Sendai 980-8577 (Japan)

    2006-10-15

    The low-temperature ultrasonic measurements are performed for the direct observation of the vacancies in Czochralski-grown (CZ-grown) silicon crystal. The elastic softening similar to that we recently found for the floating-zone-grown (FZ-grown) silicon crystals is observed also for the vacancy-rich region of the defect-free zone (DFZ) in the CZ silicon crystal. We further uncover that both of the interstitial-rich region in the DFZ and the region of the ring-like oxidation-induced stacking faults of the same crystal ingot exhibit no such elastic softening of detectable magnitude, confirming our previous conclusion that the defects responsible for the low-temperature softening are the vacancies. We observe how the vacancy concentration in the DFZ varies along the pulling direction.

  14. Experimental study of the hysteresis in hydrogenated amorphous silicon thin-film transistors for an active matrix organic light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hoon; Shin, Kwang-Sub; Park, Joong-Hyun; Han, Min-Koo [Seoul National University, Seoul (Korea, Republic of)

    2006-01-15

    An experimental scheme for validating the cause of the hysteresis phenomenon in hydrogenated amorphous-silicon-thin-film transistors (a-Si:H TFTs) is reported. A different gate starting voltage to the desired gate voltage has been considered to prove an effect of filling an acceptor-like or donor-like state in the interface. The integration time of the semiconductor parameter analyzer has also been controlled to investigate the effect between the de-trapping rate and hysteresis. The experimental results show that the previous data voltage in the (n-1)th frame affects the OLED current in the (n)th frame.

  15. Pixel-Level Digital-to-Analog Conversion Scheme for Compact Data Drivers of Active Matrix Organic Light-Emitting Diodes with Low-Temperature Polycrystalline Silicon Thin-Film Transistors

    Science.gov (United States)

    Tae-Wook Kim,; Byong-Deok Choi,

    2010-03-01

    This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1:3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 μm, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.

  16. Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator

    Institute of Scientific and Technical Information of China (English)

    Han Zhitao; Chu Jinkui; Meng Fantao; Jin Rencheng

    2009-01-01

    According to Lambert's law, a novel structure of photodetectors, namely photodetectors in silicon on-insulator, is proposed. By choosing a certain thickness value for the SOI layer, the photodetector can absorb blue/violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared re gion, making a blue/violet filter unnecessary. The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity. This can improve the collection efficiency of short-wavelength photogenerated carriers. The device structure was optimized through numerical simulation, and the results show that the photodiode is a kind of high performance photodetector in the blue/violet region.

  17. Plan for Subdividing Genesis Mission Diamond-on-Silicon 60000 Solar Wind Collector

    Science.gov (United States)

    Burkett, Patti J.; Allton, J. A.; Clemett, S. J.; Gonzales, C. P.; Lauer, H. V., Jr.; Nakamura-Messenger, K.; Rodriquez, M. C.; See, T. H.; Sutter, B.

    2013-01-01

    NASA's Genesis solar wind sample return mission experienced an off nominal landing resulting in broken, albeit useful collectors. Sample 60000 from the collector is comprised of diamond-like-carbon film on a float zone (FZ) silicon wafer substrate Diamond-on-Silicon (DOS), and is highly prized for its higher concentration of solar wind (SW) atoms. A team of scientist at the Johnson Space Center was charged with determining the best, nondestructive and noncontaminating method to subdivide the specimen that would result in a 1 sq. cm subsample for allocation and analysis. Previous work included imaging of the SW side of 60000, identifying the crystallographic orientation of adjacent fragments, and devising an initial cutting plan.

  18. Analysis of Testbeam Data of Irradiated Silicon Prototype Sensors for the CMS Tracker Upgrade

    CERN Document Server

    Auzinger, Georg

    2013-01-01

    A large number of 6 inch wafers made from p and n-type, float zone, Magnetic Czochralski and Epitaxial Silicon in thicknesses ranging from 50 to 320 $\\mu m$ were ordered from Hamamatsu. The wafers contain many different test structures as well as strip sensors called Multi Geometry Silicon Strip Detector (MSSD), that feature pitches from 70 to 240 $\\mu m$ and different strip widths. The structures were irradiated to a fluence of $1.5$ $\\times$ $10^{15}$ $1MeV$ $N_{eq}\\ cm^{-2}$ which corresponds to the fluence that the sensors will receive in a future Tracker at a distance of 20 centimeters from the beam. This contribution will focus on the results obtained in various test beams with these strip sensors. The evolution of parameters such as resolution, signal and noise with increasing fluences will be addressed as well as the relation between geometry, thickness and technology.

  19. Flux-enhanced monochromator by ultrasound excitation of annealed Czochralski-grown silicon crystals

    CERN Document Server

    Koehler, S; Seitz, C; Magerl, A; Mashkina, E; Demin, A

    2003-01-01

    The neutron flux from monochromator crystals can be increased by ultrasound excitation or by strain fields. Rocking curves of both a perfect float-zone silicon crystal and an annealed Czochralski silicon crystal with oxygen precipitates were measured at various levels of ultrasound excitation on a cold-neutron backscattering spectrometer. We find that the effects of the dynamic strain field from the ultrasound and the static strain field from the defects are not additive. Rocking curves were also taken at different ultrasound frequencies near resonance of the crystal/ultrasound-transducer system with a time resolution of 1 min. Pronounced effects of crystal heating are observed, which render the conditions for maximum neutron reflectivity delicate. (orig.)

  20. DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

    Energy Technology Data Exchange (ETDEWEB)

    Simoen, E. E-mail: simoen@imec.be; Claeys, C.; Privitera, V.; Coffa, S.; Kokkoris, M.; Kossionides, E.; Fanourakis, G.; Nylandsted Larsen, A.; Clauws, P

    2002-01-01

    In this paper, deep level transient spectroscopy (DLTS) is applied to study the deep levels in tin-doped and high-energy proton irradiated n-type float-zone (FZ) silicon. The results will be compared with irradiated tin-free FZ reference material, in order to evaluate the hardening potential. It will be shown that in Sn-doped silicon (FZ:Sn), a number of additional deep levels can be observed, two of which have been identified as acceptors associated with Sn-V. Furthermore, optically active recombination centres have been probed by photoluminescence (PL) spectroscopy. The PL results confirm the reduction of electrically active radiation-defect formation in FZ:Sn. At the same time, no Sn-related optically active centres have been found so far.

  1. IMPATT diodes. Citations from the NTIS data base

    Science.gov (United States)

    Reed, W. E.

    1980-04-01

    Government sponsored research reports are cited covering the design, characterization, and applications of IMPATT diodes. Topics include reliability, power handling, properties, noise, fabrication, and radiation effects. The use of silicon and gallium arsenide IMPATT diodes for microwave generation and amplification is included. This updated bibliography contains 182 abstracts, 14 of which are new entries to the previous edition.

  2. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, van Maurice; Lebouille, Tom; Visser, Guido; Vliet, van Frank E.

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are c

  3. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, M. van; Lebouille, T.T.N.; Visser, G.C.; Vliet, F.E. van

    2009-01-01

    In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in p

  4. Emission Spectral Control of a Silicon Light Emitting Diode Fabricated by Dressed-Photon-Phonon Assisted Annealing Using a Short Pulse Pair

    Directory of Open Access Journals (Sweden)

    Tadashi Kawazoe

    2014-01-01

    Full Text Available We fabricated a high-efficiency infrared light emitting diode (LED via dressed-photon-phonon (DPP assisted annealing of a p-n homojunctioned bulk Si crystal. The center wavelength in the electroluminescence (EL spectrum of this LED was determined by the wavelength of a CW laser used in the DPP-assisted annealing. We have proposed a novel method of controlling the EL spectral shape by additionally using a pulsed light source in order to control the number of phonons for the DPP-assisted annealing. In this method, the Si crystal is irradiated with a pair of pulses having an arrival time difference between them. The number of coherent phonons created is increased (reduced by tuning (detuning this time difference. A Si-LED was subjected to DPP-assisted annealing using a 1.3 μm (hν=0.94 eV CW laser and a mode-locked pulsed laser with a pulse width of 17 fs. When the number of phonons was increased, the EL emission spectrum broadened toward the high-energy side by 200 meV or more. The broadening towards the low-energy side was reduced to 120 meV.

  5. Fabrication and characterization of Zn O:Zn(n{sup +})/porous-silicon/Si(p) heterojunctions for white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Vasquez A, M. A. [INAOE, Department of Electronics, 72840 Puebla, Pue. (Mexico); Romero P, G.; Pena S, R. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Ingenieria Electrica, SEES, Av. Intituto Politecnico Nacional No. 2508, Col. San Pedro Zacatenco, 07360 Ciudad de Mexico (Mexico); Andraca A, J. A. [IPN, Centro de Nanociencias y Micro y Nanotecnologias, Av. Luis Enrique Erro s/n, Col. San Pedro Zacatenco, 07738 Ciudad de Mexico (Mexico)

    2016-11-01

    The fabrication and characterization of electro luminescent Zn O:Zn(n{sup +})/porous silicon/Si(p) heterojunctions is presented. Highly conductive Zn O films (Zn O:Zn(n{sup +})) were produced by applying a temperature annealing at 400 degrees Celsius by 5 min to the Zn O/Zn/Zn O arrange formed by DC sputtering, and the porous silicon (PS) films were prepared on p-type (100) Si wafers by anodic etching. The Zn O: Zn(n{sup +})/PS/Si(p) heterojunction is accomplished by applying a brief temperature annealing stage to the entire Zn O/Zn/Zn O/PS/Si structure to preserve the PS luminescent characteristics. The Zn O:Zn(n{sup +}) films were characterized by X-ray diffraction and Hall-van der Pauw measurements. The PS and Zn O:Zn(n{sup +}) films were also studied by photoluminescence (Pl) measurements. The current-voltage characteristics of the heterojunctions showed well defined rectifying behavior with a turn-on voltage of 1.5 V and ideality factor of 5.4. The high ideality factor is explained by the presence of electron tunneling transport aided by energy levels related to the defects at the heterojunction interface and into the PS film. The saturation current and the series resistance of the heterostructure were 4 x 10{sup -7} A/cm{sup 2} and 16 Ω-cm{sup 2}, respectively. White color electroluminescence is easily observed at the naked eye when excited with square wave pulses of 8 V and 1 Khz. (Author)

  6. Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

    Science.gov (United States)

    Saseendran, Sandeep S.; Saravanan, S.; Raval, Mehul C.; Kottantharayil, Anil

    2016-03-01

    Low temperature oxidation of silicon in plasma ambient is a potential candidate for replacing thermally grown SiO2 films for surface passivation of crystalline silicon solar cells. In this work, we report the growth of silicon oxy-nitride (SiOxNy) film in N2O plasma ambient at 380 °C. However, this process results in trapping of interstitial oxygen within silicon. The impact of this trapped interstitial oxygen on the surface passivation quality is investigated. The interstitial oxygen trapped in silicon was seen to decrease for larger SiOxNy film thickness. Effective minority carrier lifetime (τeff) measurements on n-type float zone silicon wafers passivated by SiOxNy/silicon nitride (SiNv:H) stack showed a decrease in τeff from 347 μs to 68 μs, for larger SiOxNy film thickness due to degradation in interface properties. From high frequency capacitance-voltage measurements, it was concluded that the surface passivation quality was governed by the interface parameters (fixed charge density and interface state density). High temperature firing of the SiOxNy/SiNv:H stack resulted in a severe degradation in τeff due to migration of oxygen across the interface into silicon. However, on using the SiOxNy/SiNv:H stack for emitter surface passivation in screen printed p-type Si solar cells, an improvement in short wavelength response was observed in comparison to the passivation by SiNv:H alone, indicating an improvement in emitter surface passivation quality.

  7. Efficiency improvement of GaN-on-silicon thin-film light-emitting diodes with optimized via-like n-electrodes

    Science.gov (United States)

    Feng, Bo; Deng, Biao; Fu, Yi; Liu, Le Gong; Li, Zeng Cheng; Feng, Mei Xin; Zhao, Han Min; Sun, Qian

    2017-07-01

    This work reports a significant improvement in efficiency by optimizing the via-like n-electrode architecture design of a GaN-based thin-film LED grown on a 6-inch silicon substrate. The external quantum efficiency of the as-fabricated 1.1 mm × 1.1 mm via-thin-film LED chip at 350 mA was increased by 11.3% compared to that of a vertical thin-film LED chip with a conventional finger-like n-electrode. Detailed analysis of encapsulation gain and false color emission patterns illustrated that the significantly improved LED performance was due to enhanced light extraction efficiency and more uniform current spreading, both of which can be attributed to the optimized via-thin-film chip structure. Minimizing the light loss at the periphery of the Ag mirror was demonstrated to be a critical factor for improving light extraction, rather than simply replacing the finger-like n-electrodes with via-like ones. After encapsulation, the median blue lamp power and the wall-plug efficiency of the via-thin-film LED at 350 mA reached 659 mW and 63.7%, respectively.

  8. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.

    Science.gov (United States)

    Guo, Wei; Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

    2010-09-08

    Catalyst-free growth of (In)GaN nanowires on (001) silicon substrate by plasma-assisted molecular beam epitaxy is demonstrated. The nanowires with diameter ranging from 10 to 50 nm have a density of 1-2 x 10(11) cm(-2). P- and n-type doping of the nanowires is achieved with Mg and Si dopant species, respectively. Structural characterization by high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The peak emission wavelength of InGaN nanowires can be tuned from ultraviolet to red by varying the In composition in the alloy and "white" emission is obtained in nanowires where the In composition is varied continuously during growth. The internal quantum efficiency varies from 20-35%. Radiative and nonradiative lifetimes of 5.4 and 1.4 ns, respectively, are obtained from time-resolved photoluminescence measurements at room temperature for InGaN nanowires emitting at lambda = 490 nm. Green- and white-emitting planar LEDs have been fabricated and characterized. The electroluminescence from these devices exhibits negligible quantum confined Stark effect or band-tail filling effect.

  9. Silicon and nitride FETs for THz sensing

    Science.gov (United States)

    Shur, M.

    2011-06-01

    Traditional THz electronics is using nonlinear properties of Schottky diodes for THz detectors and mixers and Gunn diodes driving frequency multiplier Schottky diode chains. Recently, ultra-short channel silicon CMOS and nitridebased transistors have demonstrated THz performance. New approaches use excitations of electron density in FET channels - called plasma waves - to generate and detect THz radiation, and extremely high sheet electron density in short channel AlN/GaN based HEMTs makes them especially suitable for applications in THz plasmonic devices.

  10. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  11. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  12. Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

    Directory of Open Access Journals (Sweden)

    Bisewski Damian

    2016-09-01

    Full Text Available This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

  13. Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.

    1980-01-01

    The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

  14. Epitaxial silicon semiconductor detectors, past developments, future prospects

    Energy Technology Data Exchange (ETDEWEB)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.

  15. Epitaxial silicon semiconductor detectors: past developments, future prospects

    Energy Technology Data Exchange (ETDEWEB)

    Gruhn, C.R.

    1977-02-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.

  16. Controlled samples for silicon defect and impurity studies

    Energy Technology Data Exchange (ETDEWEB)

    Ciszek, T.F. [National Renewable Energy Lab., Golden, CO (United States)

    1995-08-01

    Because of the diverse defects and impurities that are present in any given sample of silicon material, it can be extremely difficult to conduct a controlled experiment to study the influence of any particular defect or impurity on photovoltaic properties such as minority charge carrier lifetime {tau} or solar cell efficiency q. For example, the influence of iron may be different if boron is present, or the influence of silicon self interstitial clusters may be different if oxygen is present. It thus becomes important to conduct such studies on controlled samples where the influence of secondary effects is minimized. At NREL, over the past several years, we have focused on using the high-purity float-zone (FZ) growth method to obtain controlled samples. Because the silicon melt is not in contact with a container, and no heated components are in the growth region, very high purities and low defect levels can be achieved in baseline material. The baseline can be controllably perturbed by introduction of specific defects or impurities. The chart shown below lists some of the types of defect and impurity. combinations that can be studied in this way. The boxes marked with an {open_quotes}x{close_quotes} represent combinations we have studied to some extent.

  17. Characterization of oxygen dimer-enriched silicon detectors

    CERN Document Server

    Boisvert, V; Moll, M; Murin, L I; Pintilie, I

    2005-01-01

    Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

  18. Silicon LEDs in FinFET technology

    NARCIS (Netherlands)

    Piccolo, G.; Kuindersma, P.I.; Ragnarsson, L-A.; Hueting, R.J.E.; Collaert, N.; Schmitz, J.

    2014-01-01

    We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped activ

  19. Shallow bistable non-effective-mass-like donors in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tokmoldin, S.Zh. [Institute of Physics and Technology, Ibragimov Street 11, Almaty 050032 (Kazakhstan)]. E-mail: serik@sci.kz; Issova, A.T. [Institute of Physics and Technology, Ibragimov Street 11, Almaty 050032 (Kazakhstan); Abdullin, Kh.A. [Institute of Physics and Technology, Ibragimov Street 11, Almaty 050032 (Kazakhstan); Mukashev, B.N. [Institute of Physics and Technology, Ibragimov Street 11, Almaty 050032 (Kazakhstan)

    2006-04-01

    Infrared absorption of float-zone-refined silicon crystals implanted with protons and annealed at 450 deg. C has been investigated in the range 150-1800 cm{sup -1}. Along with the presence of well-known prominent bands related to higher-order electronic transitions of intrinsic defects at 700-1200 cm{sup -1} and wagging vibrations of Si-H bonds in 600-800 cm{sup -1} range, four effective-mass-like donors with binding energies in the range 32.6-38.7 meV and dominating sharp absorption peaks at 309, 373 and 444 cm{sup -1} were observed. The dominant sharp peaks as well as a broad band in the spectral region 200-1800 cm{sup -1} with the maximum at {approx}450 cm{sup -1} demonstrate bistable behavior and arise from hydrogen-related non-effective-mass-like shallow donors.

  20. Application of spherical micro diodes for brachytherapy dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Broisman, Andrey, E-mail: andreybr@ariel.ac.i [Medical Physics, Ariel University Center, Ariel 40700 (Israel); Shani, Gad [Biomedical Engineering, Ben Gurion University, P.O. Box 653, Beer Sheva 84105 (Israel)

    2011-03-15

    The research presented in this paper demonstrates the feasibility and the advantages of using spherical micro diodes for radiation dosimetry. The spherical symmetry of the diode response is demonstrated, compared to that of planar diodes. The application of the spherical diode described here is for radiotherapy dosimetry, particularly brachytherapy. Measurements were done in PMMA phantoms. The advantage of the spherical diode is that it can be used for radiation measurement in a 4{pi} geometry, it was demonstrated by measurements in both axial and azimuthal planes. The diodes were found to respond equally to radiation coming from all directions, directly from the source or due to scattered radiation within the medium. In the present work 1.8 mm diameter silicone diodes were used. The small size of these spherical diodes provides local dose measurement and can be used for in situ dosimetry while treatment takes place. Treatment planning correction can be made accordingly. Commercially available seeds of the isotopes I{sup 125} and Pd{sup 103} were used as radiation sources. The spherical diodes response was compared with that of planar diodes XRB generally used for UV and X-ray dosimetry, and with TLD measurements. We have also compared the measured results with Monte Carlo simulation, applying the MCNP code and with calculations shown in the TG-43 report.

  1. Silicon Schottky Diode Safe Operating Area

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Ladbury, Raymond L.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2016-01-01

    Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacementdamage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

  2. Avalanche robustness of SiC Schottky diode

    OpenAIRE

    Dchar, Ilyas; Buttay, Cyril; Morel, Hervé

    2016-01-01

    International audience; Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in the device can increase quickly and will not be uniformly distributed across t...

  3. Logarithmic current electrometer using light emitting diodes

    Science.gov (United States)

    Acharya, Y. B.; Aggarwal, A. K.

    1996-02-01

    The limit of low current measurement using logarithmic current to voltage converter is improved by 6 - 7 orders of magnitude with the use of diodes of large band gap as compared with silicon diodes. Low cost commercially available light emitting diodes (LEDs) have been used for this purpose. A theoretical study and experimental measurement of device constant and reverse saturation currents of the whole class of commercially available LEDs has been carried out. A circuit has been developed which makes use of a new technique for temperature compensation and its performance is compared with the technique in common use. The performance of the amplifier is found to be stable in the temperature range 5 - 600957-0233/7/2/005/img5 for both polarity of signals from 0957-0233/7/2/005/img6 to 0957-0233/7/2/005/img7 A.

  4. Nitrogen effects on silicon growth, defects, and carrier lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Ciszek, T.F.; Wang, T.H.; Burrows, R.W. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1995-08-01

    Silicon crystal or multicrystal growth in N{sub 2} or partial-N{sub 2} atmospheres can provide mechanical strengthening, lower purge-gas costs (nitrogen from liquid sources is about a factor of 4 less expensive than argon from liquid sources), and reduce swirl-type microdefect formation in dislocation-free (DF) crystals. There is not much literature on electrical effects of N in Si, including lifetime effects. We studied the effects of Si growth in atmospheres containing N{sub 2} on minority charge carrier lifetime E using the float-zone (FZ) crystal growth method. Ingots were grown with purge gases that ranged from pure argon (99.9995%) to pure N{sub 2} (99-999%). We found that multicrystalline silicon ingot growth in a partial or total nitrogen ambient has a negligible effect on {tau}. Values of 40 {mu}s < {tau} < 100 {mu}s were typical regardless of ambient. For DF growth, the degradation of {tau} is minimal and {tau} values above 1000 {mu}s are obtained if the amount of N{sub 2} in the purge gas is below the level at which nitride compounds form in the melt and disrupt DF growth.

  5. Avalanche diode having reduced dark current and method for its manufacture

    Energy Technology Data Exchange (ETDEWEB)

    Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

    2017-08-29

    An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

  6. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  7. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  8. Header For Laser Diode

    Science.gov (United States)

    Rall, Jonathan A. R.; Spadin, Paul L.

    1990-01-01

    Header designed to contain laser diode. Output combined incoherently with outputs of other laser diodes in grating laser-beam combiner in optical communication system. Provides electrical connections to laser diode, cooling to thermally stabilize laser operation, and optomechanical adjustments that steer and focus laser beam. Range of adjustments provides for correction of worst-case decentering and defocusing of laser beam encountered with laser diodes. Mechanical configuration made simple to promote stability and keep cost low.

  9. Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Chuanxiao, Uchida, Yasunori; Johnston, Steve; Hacke, Peter; Wohlgemuth, John; Al-Jassim, Mowafak

    2017-03-14

    We studied a bypass diode recuperated from fielded modules in a rooftop installation to determine the failure mechanism. The field-failed diode showed similar characteristics to thermal runaway, specifically X-ray tomography evidence of migrated metal. We also observed burn marks on the silicon surface like those lab-stressed for thermal runaway. Reaction products are more soluble than silicon and the surface is oxygen rich.

  10. Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon

    Energy Technology Data Exchange (ETDEWEB)

    Macchiolo, A. [INFN and Universita degli Studi di Florence (Italy)]. E-mail: Anna.Macchiolo@fi.infn.it; Borrello, L. [INFN and Universita degli Studi di Pisa (Italy); Boscardin, M. [ITC-IRST Trento, Povo, Trento (Italy); Bruzzi, M. [INFN and Universita degli Studi di Florence (Italy); Creanza, D. [INFN and Dipartimento Interateneo di Fisica, Bari (Italy); Dalla Betta, G.-F. [ITC-IRST Trento, Povo, Trento (Italy); DePalma, M. [INFN and Dipartimento Interateneo di Fisica, Bari (Italy); Focardi, E. [INFN and Universita degli Studi di Florence (Italy); Manna, N. [INFN and Dipartimento Interateneo di Fisica, Bari (Italy); Menichelli, D. [INFN and Universita degli Studi di Florence (Italy); Messineo, A. [INFN and Universita degli Studi di Pisa (Italy); Piemonte, C. [ITC-IRST Trento, Povo, Trento (Italy); Radicci, V. [INFN and Dipartimento Interateneo di Fisica, Bari (Italy); Ronchin, S. [ITC-IRST Trento, Povo, Trento (Italy); Scaringella, M. [INFN and Universita degli Studi di Florence (Italy); Segneri, G. [INFN and Universita degli Studi di Pisa (Italy); Sentenac, D. [INFN and Universita degli Studi di Pisa (Italy); Zorzi, N. [ITC-IRST Trento, Povo, Trento (Italy)

    2007-04-01

    The results of the pre- and post-irradiation characterization of n- and p-type magnetic Czochralski silicon micro-strip sensors are reported. This work has been carried out within the INFN funded SMART project aimed at the development of radiation-hard semiconductor detectors for the luminosity upgrade of the large Hadron collider (LHC). The detectors have been fabricated at ITC-IRST (Trento, Italy) on 4 in wafers and the layout contains 10 mini-sensors. The devices have been irradiated with 24 GeV/c and 26 MeV protons in two different irradiation campaigns up to an equivalent fluence of 3.4x10{sup 15} 1-MeV n/cm{sup 2}. The post-irradiation results show an improved radiation hardness of the magnetic Czochralski mini-sensors with respect to the reference float-zone sample.

  11. Amorphous Silicon 16—bit Array Photodetector①

    Institute of Scientific and Technical Information of China (English)

    ZHANGShaoqiang; XUZhongyang; 等

    1997-01-01

    An amorphous silicon 16-bit array photodetector with the a-SiC/a-Si heterojunction diode is presented.The fabrication processes of the device were studied systematically.By the optimum of the diode structure and the preparation procedures,the diode with Id<10-12A/mm2 and photocurrentIp≥0.35A/W has been obtained at the wavelength of 632nm.

  12. Lighting with laser diodes

    Science.gov (United States)

    Basu, Chandrajit; Meinhardt-Wollweber, Merve; Roth, Bernhard

    2013-08-01

    Contemporary white light-emitting diodes (LEDs) are much more efficient than compact fluorescent lamps and hence are rapidly capturing the market for general illumination. LEDs are also replacing halogen lamps or even newer xenon based lamps in automotive headlamps. Because laser diodes are inherently much brighter and often more efficient than corresponding LEDs, there is great research interest in developing laser diode based illumination systems. Operating at higher current densities and with smaller form factors, laser diodes may outperform LEDs in the future. This article reviews the possibilities and challenges in the integration of visible laser diodes in future illumination systems.

  13. Laser Diode Ignition (LDI)

    Science.gov (United States)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  14. The seeding effect of floating zone growth on Nd sub 1 sub . sub 8 sub 5 Ce sub 0 sub . sub 1 sub 5 CuO sub 4 and Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 sub - subdelta single crystals

    CERN Document Server

    Lin, C T; Liang, B

    2002-01-01

    Single crystals with the [100] orientation were selected and used as seeds to investigate the effect of travelling solvent floating zone growth on superconducting oxides of Nd sub 1 sub . sub 8 sub 5 Ce sub 0 sub . sub 1 sub 5 CuO sub 4 and Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 sub - subdelta. The number of nuclei was remarkably reduced and random nuclei could be eased when the seeding was applied during the growth of Nd sub 1 sub . sub 8 sub 5 Ce sub 0 sub . sub 1 sub 5 CuO sub 4 single crystals, compared to the crystals grown without seed. The crystal could preferentially grow on the seed although some additional nuclei occurred at the solid-liquid interface during the initial growth process. In consequence, the crystal ingot obtained is a large single grain having dimensions of 5 mm in diameter and 40 mm in length. The orientation of the seeded growth crystal was found to be 5deg off the [100] seed identified by an x-ray Laue pattern. For the growth of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 sub - subdelta, it...

  15. Simulación Estática y Dinámica de un Modelo Físico del Diodo PiN en Carburo de Silicio Static and dynamic simulation of a Physically-Based Model of Silicon Carbide PiN Diode

    Directory of Open Access Journals (Sweden)

    Leobardo Hernández

    2010-01-01

    Full Text Available Este artículo presenta una propuesta de modelado y simulación del diodo PiN en Carburo de Silicio. La propuesta principal de modelado soluciona la ecuación de difusión ambipolar a partir de una aproximación empírica. Mediante la metodología utilizada se obtiene un conjunto de ecuaciones diferenciales que modelan los principales fenómenos físicos asociados al dispositivo semiconductor de potencia. Las ecuaciones implementadas en Pspice modelan en una forma más real el comportamiento de la dinámica de cargas en la región N- de un diodo PiN en Carburo de Silicio para las fases estáticas y dinámicas. Para la comprobación y validación del modelo desarrollado, se compararon los resultados de simulación con datos experimentales reportados en la literatura, obteniéndose resultados adecuados para aplicaciones de electrónica de potencia.This paper presents a method to solve the ambipolar diffusion equation for modeling and simulating the PiN diode in silicon carbide, using an empirical approximation. Through this methodology a set of differential equations that simúlate the main physical phenomena associated to the power semiconductor device are obtained. The equations, implemented in Pspice, model in a more actual form the charges behaviour in the N- región of a PiN diode in silicon carbide for the static and dynamic phases. For the verification and validation of the model, the simulation results were compared with experimental data reported in the literature, obtaining aecurate results for application in power electronic.

  16. Phosphorus out-diffusion in laser molten silicon

    Energy Technology Data Exchange (ETDEWEB)

    Köhler, J. R.; Eisele, S. J. [Institut für Photovoltaik (ipv), Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)

    2015-04-14

    Laser doping via liquid phase diffusion enables the formation of defect free pn junctions and a tailoring of diffusion profiles by varying the laser pulse energy density and the overlap of laser pulses. We irradiate phosphorus diffused 100 oriented p-type float zone silicon wafers with a 5 μm wide line focused 6.5 ns pulsed frequency doubled Nd:YVO{sub 4} laser beam, using a pulse to pulse overlap of 40%. By varying the number of laser scans N{sub s} = 1, 2, 5, 10, 20, 40 at constant pulse energy density H = 1.3 J/cm{sup 2} and H = 0.79 J/cm{sup 2} we examine the out-diffusion of phosphorus atoms performing secondary ion mass spectroscopy concentration measurements. Phosphorus doping profiles are calculated by using a numerical simulation tool. The tool models laser induced melting and re-solidification of silicon as well as the out-diffusion of phosphorus atoms in liquid silicon during laser irradiation. We investigate the observed out-diffusion process by comparing simulations with experimental concentration measurements. The result is a pulse energy density independent phosphorus out-diffusion velocity v{sub out} = 9 ± 1 cm/s in liquid silicon, a partition coefficient of phosphorus 1 < k{sub p} < 1.1 and a diffusion coefficient D = 1.4(±0.2)cm{sup 2}/s × 10{sup −3 }× exp[−183 meV/(k{sub B}T)].

  17. Edgeless silicon pad detectors

    Science.gov (United States)

    Perea Solano, B.; Abreu, M. C.; Avati, V.; Boccali, T.; Boccone, V.; Bozzo, M.; Capra, R.; Casagrande, L.; Chen, W.; Eggert, K.; Heijne, E.; Klauke, S.; Li, Z.; Mäki, T.; Mirabito, L.; Morelli, A.; Niinikoski, T. O.; Oljemark, F.; Palmieri, V. G.; Rato Mendes, P.; Rodrigues, S.; Siegrist, P.; Silvestris, L.; Sousa, P.; Tapprogge, S.; Trocmé, B.

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in "edgeless" planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8 stat..±6 syst.) μm.

  18. Edgeless silicon pad detectors

    Energy Technology Data Exchange (ETDEWEB)

    Perea Solano, B. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: blanca.perea.solano@cern.ch; Abreu, M.C. [LIP and University of Algarve, 8000 Faro (Portugal); Avati, V. [CERN, CH-1211 Geneva 23 (Switzerland); Boccali, T. [INFN Sez. di Pisa and Scuola Normale Superiore, Pisa (Italy); Boccone, V. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Bozzo, M. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Capra, R. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Casagrande, L. [INFN Sez. di Roma 2 and Universita di Roma 2, Rome (Italy); Chen, W. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Eggert, K. [CERN, CH-1211 Geneva 23 (Switzerland); Heijne, E. [CERN, CH-1211 Geneva 23 (Switzerland); Klauke, S. [CERN, CH-1211 Geneva 23 (Switzerland); Li, Z. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Maeki, T. [Helsinki Institute of Physics, Helsinki (Finland); Mirabito, L. [CERN, CH-1211 Geneva 23 (Switzerland); Morelli, A. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Niinikoski, T.O. [CERN, CH-1211 Geneva 23 (Switzerland); Oljemark, F. [Helsinki Institute of Physics, Helsinki (Finland); Palmieri, V.G. [Helsinki Institute of Physics, Helsinki (Finland); Rato Mendes, P. [LIP and University of Algarve, 8000 Faro (Portugal); Rodrigues, S. [LIP and University of Algarve, 8000 Faro (Portugal); Siegrist, P. [CERN, CH-1211 Geneva 23 (Switzerland); Silvestris, L. [INFN Sez. Di Bari, Bari (Italy); Sousa, P. [LIP and University of Algarve, 8000 Faro (Portugal); Tapprogge, S. [Helsinki Institute of Physics, Helsinki (Finland); Trocme, B. [Institut de Physique Nucleaire, Villeurbanne (France)

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in 'edgeless' planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5{+-}8{sub stat.}.{+-}6{sub syst.}) {mu}m.

  19. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  20. p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation

    Directory of Open Access Journals (Sweden)

    Chien-Ming Lee

    2013-01-01

    Full Text Available The p-type quasi-mono wafer is a novel type of silicon material that is processed using a seed directional solidification technique. This material is a promising alternative to traditional high-cost Czochralski (CZ and float-zone (FZ material. Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG and the junction isolation process that is required after the conventional thermal POCl3 diffusion process. Moreover, the good passivation performance of the ion implantation process improves Voc. Our results show that, after metallization and cofiring, an average cell efficiency of 18.55% can be achieved using 156 × 156 mm p-type quasi-mono silicon wafer. Furthermore, the absolute cell efficiency obtained using this method is 0.47% higher than that for the traditional POCl3 diffusion process.

  1. Terahertz Diode Development

    Science.gov (United States)

    2009-03-23

    Gunn Diode , Negative Differential Resistance, Ballistic Transport, GaN, THz, Co-planar Resonator 16. SECURITY CLASSIFICATION OF: REPORT U b...Report DATES COVERED (From - Jo) 1 January 2004- 31 December 2008 4. TITLE AND SUBTITLE Terahertz Diode Development 5a. CONTRACT NUMBER N00014...current-voltage oscillations at the terminals of the diode at a frequency which is, to first order, determined by the average transit time of the EAL

  2. Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

    Science.gov (United States)

    Toftul, Alexandra; Polzin, Kurt A.; Martin, Adam K.; Hudgins, Jerry L.

    2014-01-01

    Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

  3. Influence of radiation induced defect clusters on silicon particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Junkes, Alexandra

    2011-10-15

    The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10{sup 35} cm{sup -2}s{sup -1}. In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to {phi}{sub eq}=10{sup 16} cm{sup -2}. The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E{sub C}-0.460 eV and E205a at E{sub C}-0.395 eV where E{sub C} is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V{sub 3}) defect. Furthermore, isochronal annealing experiments have shown that the V{sub 3} defect

  4. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates.

    Science.gov (United States)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-19

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  5. Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

    Directory of Open Access Journals (Sweden)

    Hsu Chih-Neng

    2013-01-01

    Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

  6. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

    Science.gov (United States)

    Lee, Jooho; Lee, Su Chan; Kim, Yongsung; Heo, Jinseong; Lee, Kiyoung; Lee, Dongwook; Kim, Jaekwan; Lee, Sunghee; Lee, Chang Seung; Nam, Min Sik; Jun, Seong Chan

    2016-02-01

    We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

  7. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  8. DLTS measurement of energetic levels, generated in silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bosetti, M. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Croitoru, N. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Furetta, C. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Leroy, C. [Universite de Montreal, Montreal, PQ H3C 3J7 (Canada); Pensotti, S. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Rancoita, P.G. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Rattaggi, M. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Redaelli, M. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Rizzatti, M. [Istituto Nazionale di Fisica Nucleare, Milan (Italy); Seidman, A. [Istituto Nazionale di Fisica Nucleare, Milan (Italy)

    1995-07-15

    DLTS (deep level transient spectroscopy) measurements were performed on irradiated Si detectors to record data on the energetic levels traps generated by neutrons. For moderate fluences ({phi}) of neutrons ({phi}<10{sup 12} n cm{sup -2}) electron and hole trap levels have been detected. Four electron trap levels were found for both FZ (float zone) and MCZ (magnetic Czochralsky) types of Si detectors but only two hole trap levels in FZ and one in MCZ detectors. This indicates that the type of silicon has an influence on the traps generated by irradiation. From the values obtained for the relative concentration of E1 centers in MCZ and FZ detectors, it results that the E1 centers are oxygen and not vacancy limited. Since the concentration of the E2, E3, and E4 levels are larger in FZ than in MCZ detectors, it may be assumed that the ``gettering effect`` can control the formation of deeper traps. Filling pulses were applied for various voltages and at the flat band filling voltage, maximum ratio of N{sub t}/N of the E1 center was achieved. This may indicate that the concentration of E1 centers, near the p{sup +}-n interface, can be larger than in the rest of the junction. (orig.).

  9. Microstructuring of silicon with femtosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Freund, Waldemar; Richters, Jan P.; Voss, Tobias; Gutowski, Juergen [Institute of Solid State Physics, Semiconductor Optics Group, University of Bremen (Germany)

    2011-07-01

    Silicon structured with ultrashort laser pulses which is called ''black silicon'' due to its dark appearance has been a field of intense studies in recent years. It exhibits a nearly uniform absorptivity beyond 90% in the whole visible to near-infrared spectral region. Therefore, it is a promising material for applications in solar cells and photo diodes. In this talk a brief introduction of microstructuring of silicon with ultrashort laser pulses will be given. Structuring is carried out in a sulfurhexafluoride (SF{sub 6}) atmosphere, which simultaneously allows doping of the silicon with sulfur far above the solubility limit. The structuring leads to a specific quasiperiodic surface morphology at which incident light is reflected multiple times. Thus light absorption in the silicon is considerably enhanced. The extremely high doping with sulfur results in the formation of a distinct defect band which is the origin of high absorptance in the near infrared. Furthermore, sulfur acts as a donor in silicon. Hence, microstructuring of p-doped silicon in SF{sub 6} atmosphere leads to the formation of a p-n{sup +} junction. This is an important step towards the fabrication of efficient solar cells and photo diodes with increased infrared sensitivity on base of easy-to-produce black silicon.

  10. Total dose dependence of oxide charge, interstrip capacitance and breakdown behavior of sLHC prototype silicon strip detectors and test structures of the SMART collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H.F.-W. [SCIPP, UC Santa Cruz, Santa Cruz, CA 95064 (United States)], E-mail: hartmut@scipp.ucsc.edu; Betancourt, C.; Heffern, R.; Henderson, I.; Pixley, J.; Polyakov, A.; Wilder, M. [SCIPP, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Boscardin, M.; Piemonte, C.; Pozza, A.; Zorzi, N. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo, Trento (Italy); Dalla Betta, G.-F.; Resta, G. [DIT, Universita di Trento, Via Sommarive 14, I-38050 Povo, Trento (Italy); Bruzzi, M. [Dipt. Energetica, University of Florence, Via S. Marta 3, I-50139 Florence (Italy); Macchiolo, A. [Universita and INFN Florence, Via G. Sansone 1, I-50019 Sesto F. (Italy); Borrello, L.; Messineo, A. [Universita and INFN Pisa, Largo B. Pontecorvo, 3, I-56127 Pisa (Italy); Creanza, D.; Manna, N. [Universita and INFN Bari, Via E. Orabona 4, I-70126 Bari (Italy)

    2007-09-01

    Within the R and D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures (TS) were manufactured on several high-resistivity substrates: p-type Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with {sup 60}Co gammas and the impact of surface radiation damage on the detector properties was studied. Selected results from the pre-rad and post-rad characterization of detectors and TS are presented, in particular interstrip capacitance and resistance, break-down voltage, flatband voltage and oxide charge. Surface damage effects show saturation after 150 krad and breakdown performance improves considerably after 210 krad. Annealing was performed both at room temperature and at 60 deg. C, and large effects on the surface parameters observed.

  11. Design optimization of ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Cartiglia, N., E-mail: cartiglia@to.infn.it [INFN Torino (Italy); Arcidiacono, R. [Università del Piemonte Orientale, Novara (Italy); Baselga, M. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); Bellan, R. [Università di Torino, Torino (Italy); Boscardin, M. [Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento (Italy); Cenna, F. [INFN Torino (Italy); Dalla Betta, G.F. [Università di Trento, Via Sommarive 9, 38123 Trento (Italy); Fernndez-Martnez, P. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); Ferrero, M. [INFN Torino (Italy); Università di Torino, Torino (Italy); Flores, D. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); Galloway, Z. [Santa Cruz Institute for Particle Physics UC Santa Cruz, CA 95064 (United States); Greco, V.; Hidalgo, S. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); Marchetto, F. [INFN Torino (Italy); Monaco, V. [Università di Torino, Torino (Italy); Obertino, M. [Università del Piemonte Orientale, Novara (Italy); Pancheri, L. [Università di Trento, Via Sommarive 9, 38123 Trento (Italy); Paternoster, G. [Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento (Italy); Picerno, A. [Università di Torino, Torino (Italy); Pellegrini, G. [Centro Nacional de Microeletronica, IMB-CNM, Barcelona (Spain); and others

    2015-10-01

    Low-Gain Avalanche Diodes (LGAD) are silicon detectors with output signals that are about a factor of 10 larger than those of traditional sensors. In this paper we analyze how the design of LGAD can be optimized to exploit their increased output signal to reach optimum timing performances. Our simulations show that these sensors, the so-called Ultra-Fast Silicon Detectors (UFSD), will be able to reach a time resolution factor of 10 better than that of traditional silicon sensors.

  12. Silicon materials task of the low-cost solar-array project. Effect of impurities and processing on silicon solar cells. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Hanes, M.H.; Rai-Choudhury, P.; Mollenkopf, H.C.

    1982-02-01

    The object of the program has been to investigate the effects of various processes, metal contaminants, and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study has encompassed topics such as thermochemical (gettering) treatments, base-doping concentration, base-doping type (n vs. p), grain boundary-impurity interaction in polycrystalline devices, and long-term effects of impurities and impurity impacts on high-efficiency cells, as well as a preliminary evaluation of some potential low-cost silicon materials. The effects have been studied of various metallic impurities, introduced singly or in combination into Czochralski, float zone, and polycrystalline silicon ingots and into silicon ribbons grown by the dendritic web process. The solar cell data indicate that impurity-induced performance loss is caused primarily by a reduction in base diffusion length. An analytical model based on this observation has been developed and verified experimentally for both n- and p-base material. Studies of polycrystalline ingots containing impurities indicate that solar cell behavior is species sensitive and that a fraction of the impurities are segregated to the grain boundaries. HCl and POCl gettering improve the performance of single-crystal solar cells containing Fe, Cr, and Ti. In contrast Mo-doped material is barely affected. The efficiencies of solar cells fabricated on impurity-doped wafers is lower when the front junction is formed by ion implantation than when conventional diffusion techniques are used. For most impurity-doped solar cells stability is expected for projected times beyond 20 years. Feedstock impurity concentrations below one part per million for elements like V, or 100 parts per million for more benign impurities like Cu or Ni, will be required.

  13. Silicon-based electrically driven microcavity LED

    OpenAIRE

    2004-01-01

    A silicon pn-diode was embedded into a microcavity composed of a buried metal silicide as bottom reflector and a Si/SiO2 Bragg mirror as top reflector. Spectral narrowing and an increased intensity of the Si bandgap electroluminescence was observed.

  14. Gamma and electron high dose dosimetry with rad-hard Si diodes; Dosimetria de altas doses de raios gama e eletrons com diodos de Si resistentes a danos de radiacao

    Energy Technology Data Exchange (ETDEWEB)

    Pascoalino, Kelly Cristina da Silva

    2014-07-01

    In this work the main dosimetric characteristics of rad-hard Float Zone (FZ) and magnetic Czochralski (MCz) diodes to electrons (1.5 MeV) and gamma ({sup 60}Co) radiation are evaluated. The dosimetric system proposed is based on electrical current measurements due to radiation interactions on the devices. The batch response uniformity was studied for the n-type FZ diodes irradiated with gamma rays. The coefficient of variation of the current measurement was about 1.25% at 5 kGy of accumulated dose. A sensitivity decrease with the increase of the accumulated dose (Total Ionizing Dose - TID) was observed for both FZ and MCz diodes. For gamma irradiation, these effect is more pronounced for n-type or smaller resistivity diodes. Two types of dosimetric probe were used on the electron irradiation procedures, one of them specially designed to avoid the deterioration of the electrical contacts and the diodes metallization. The sensitivity of the preirradiated FZ and MCz diodes fell about 10% and 40%, respectively, during electron irradiation at 1.25 MGy of accumulated dose. The effect of electron radiation damage on the electrical properties of the diodes was studied by the means of leakage current and capacitance measurements as a function of bias voltage. The leakage current increases with the accumulated dose but does not contributes significantly to the current signal, since the diodes are operated in photovoltaic mode, without bias voltage. For the MCz diode no change in the full depletion voltage was observed, which indicates its higher tolerance to radiation-induced damage, as expected. During electron irradiation the temperature increases and in order to determine its influence for the current signals, the leakage current values were extrapolated up to 35 °C. The contribution does not exceed 0.1% for FZ and MCz diodes. The effect of the radiation type, electrons or gamma rays, on the pre dose procedures was analyzed for the FZ n-type device and was observed that

  15. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Maruska, P [Spire Corp., Bedford, MA (United States)

    1996-09-01

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  16. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  17. Recent trends in silicon carbide device research

    Directory of Open Access Journals (Sweden)

    Munish Vashishath

    2008-08-01

    Full Text Available Silicon carbide (SiC has revolutionised semiconductor power device performance. It is a wide band gap semiconductor with an energy gap wider than 2eV and possesses extremely high power, high voltage switching characteristics and high thermal, chemical and mechanical stability. The SiC wafers are available in 6H, 4H, 2H and 3C polytypes. Because of its wide band gap, the leakage current of SiC is many orders of magnitude lower than that of silicon. Also, forward resistance of SiC power devices is approximately 200 times lower than that of conventional silicon devices. The breakdown voltage of SiC is 8-10 times higher than that of silicon. In this paper, silicon carbide Schottky barrier diodes, power MOSFETs, UMOSFET, lateral power MOSFET, SIT (static induction transistor, and nonvolatile memories are discussed along with their characteristics and applications.

  18. Test beam results of heavily irradiated magnetic Czochralski silicon (MCz-Si) strip detectors

    CERN Document Server

    Luukka, P; Korjenevski, S; Maenpaa, T; Viljanen, H; Demina, R; Gotra, Y; Lemaitre, V; Moilanen, H; Militaru, O; Bhattacharya, S; Neuland, M; Maksimow, M; Harkonen, J; Kortelainen, M J; Spiegel, L; Hartmann, F; Dierlamm, A; Tuovinen, E; Lampen, T; Simonis, H J; Betchart, B; Czellar, S; Tuominiemi, J; Keutgen, T; Frey, M; Karimaki, V

    2010-01-01

    Strip detectors with an area of 16 cm(2) were processed on high resistivity n-type magnetic Czochralski silicon. In addition, detectors were processed on high resistivity Float Zone wafers with the same mask set for comparison. The detectors were irradiated to several different fluences up to the fluence of 3 x 10(15) 1 MeV n(eq)/cm(2) with protons or with mixed protons and neutrons. The detectors were fully characterized with CV- and IV-measurements prior to and after the irradiation. The beam test was carried out at the CERN H2 beam line using a silicon beam telescope that determines the tracks of the incoming particles and hence provides a reference measurement for the detector characterization. The n-type MCz-Si strip detectors have an acceptable SIN at least up to the fluence of 1 x 10(15) n(eq)/cm(2) and thus, they are a feasible option for the strip detector layers in the SLHC tracking systems. (C) 2009 Elsevier B.V. All rights reserved.

  19. Tailored emitter, low-resistivity, ion-implanted silicon solar cells

    Science.gov (United States)

    Minnucci, J. A.; Kirkpatrick, A. R.; Matthei, K. W.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

  20. Impact of low-dose electron irradiation on n+p silicon strip sensors

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Henkel, Ch.; Hoffmann, M.; Junkes, A.; Klanner, R.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schuwalow, S.; Schwandt, J.; Sola, V.; Steinbruck, G.; Vormwald, B.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kortelainen, M.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J., III; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2015-01-01

    The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positi...

  1. Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

  2. Light-emitting Diodes

    Science.gov (United States)

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  3. Silicon solar cells with low-cost substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kotval, P.S.; Strock, H.B.

    1978-11-07

    Epitaxial and diffusion-type planar diodes and solar cells utilize low-cost refined metallurgical silicon substrates having a substantially higher impurity content than conventional high-cost, high purity semiconductor grade silicon. The epitaxial type products have an n-on-p-on-p substrate configuration, while the diffusion-type products have pentavalent impurities diffused therein to form a p-n junction in the low cost silicon substrate. One embodiment employs a multigrained refined metallurgical silicon (RMS) prepared by precipitating essentially iron-free silicon platelets from a solution of metallurgical grade silicon in molten aluminum, melting said refined platelets, in contact with a silica slag and pulling silicon boules from a melt of said refined metallurgical silicon (RMS). By directionally solidifying the refined silicon--slag melt, a multigrained, directionally solidified refined metallurgical silicon (DS/RMS) is obtained, with boules being pulled from a melt thereof for use as said low-cost substrate. The DS/RMS may also be re-melted and directionally solidified a second time with the boules being pulled from said twice directionally solidified material being a desirable, low-cost, single crystal material suitable for use as said substrate for planar diode and solar cell applications.

  4. Monte Carlo-based diode design for correction-less small field dosimetry

    Science.gov (United States)

    Charles, P. H.; Crowe, S. B.; Kairn, T.; Knight, R. T.; Hill, B.; Kenny, J.; Langton, C. M.; Trapp, J. V.

    2013-07-01

    Due to their small collecting volume, diodes are commonly used in small field dosimetry. However, the relative sensitivity of a diode increases with decreasing small field size. Conversely, small air gaps have been shown to cause a significant decrease in the sensitivity of a detector as the field size is decreased. Therefore, this study uses Monte Carlo simulations to look at introducing air upstream to diodes such that they measure with a constant sensitivity across all field sizes in small field dosimetry. Varying thicknesses of air were introduced onto the upstream end of two commercial diodes (PTW 60016 photon diode and PTW 60017 electron diode), as well as a theoretical unenclosed silicon chip using field sizes as small as 5 mm × 5 mm. The metric \\frac{{D_{w,Q} }}{{D_{Det,Q} }} used in this study represents the ratio of the dose to a point of water to the dose to the diode active volume, for a particular field size and location. The optimal thickness of air required to provide a constant sensitivity across all small field sizes was found by plotting \\frac{{D_{w,Q} }}{{D_{Det,Q} }} as a function of introduced air gap size for various field sizes, and finding the intersection point of these plots. That is, the point at which \\frac{{D_{w,Q} }}{{D_{Det,Q} }} was constant for all field sizes was found. The optimal thickness of air was calculated to be 3.3, 1.15 and 0.10 mm for the photon diode, electron diode and unenclosed silicon chip, respectively. The variation in these results was due to the different design of each detector. When calculated with the new diode design incorporating the upstream air gap, k_{Q_{clin} ,Q_{msr} }^{f_{clin} ,f_{msr} } was equal to unity to within statistical uncertainty (0.5%) for all three diodes. Cross-axis profile measurements were also improved with the new detector design. The upstream air gap could be implanted on the commercial diodes via a cap consisting of the air cavity surrounded by water equivalent material. The

  5. Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Royet, A.S. [ENSERG, Grenoble (France). Lab. de Physique des Composants a Semiconducteurs; LEMO, ENSERG, Grenoble (France); Ouisse, T. [ENSERG, Grenoble (France). Lab. de Physique des Composants a Semiconducteurs; Billon, T.; Jaussaud, C. [LETI-CEA, Dept. de Microtechnologies, Grenoble (France); Cabon, B. [LEMO, ENSERG, Grenoble (France)

    1999-07-30

    We report the observation of random telegraph signals (RTS) occurring in the forward regime of silicon carbide Schottky diodes. RTS noise is attributed to the modulation of the conductivity either by the trapping/detrapping of a single electron or by the switching of a bistable defect, in the neighbourhood of a localized current path. Noise measurement is therefore a convenient and non-destructive method for assessing the defectivity of SiC power diodes. (orig.)

  6. Specifies of the formed fast cover silica diodes

    Directory of Open Access Journals (Sweden)

    Gorban A. N.,

    2008-06-01

    Full Text Available The authors have investigated the dependence of the current recovery time trr on the diode structures annealing parameters after irradiation by electrons е– with the energy of 4 and 10 MeV, and the fluence of 6•1015 and 8•1014 cm–2, respectively. Diodes with minimal time trr and maximum shape factor of the reduction current Krr are obtained by annealing of structures after irradiation by е– with the energy of 4 MeV and fluence 6•1015 cm–2. Time trr decreases with the increase of ratio of recombination centers concentration with energy level E3(0,37 to the concentration of other defects. At the same time, for silicon, doped with transmutation nuclear reactions, it is necessary to increase the annealing temperature as compared with the silicon, produced by the Czochralski method and zone melting method.

  7. Directed and diode percolation

    Science.gov (United States)

    Redner, S.

    1982-03-01

    We study the novel percolation phenomena that occur in random-lattice networks consisting of resistor-like and diode-like bonds. Resistor bonds connect or "transmit information" in either direction along their length, while diodes connect in one direction only. We first treat the special case of directed bond percolation, in which the diodes are aligned along a preferred axis. Mean-field theory shows that clusters become extremely anisotropic near the percolation transition and that their shapes are characterized by two correlation lengths, one parallel and one transverse to the preferred axis. These lengths diverge with exponents ν∥=1 and ν⊥=12, respectively, from which we can show that the upper critical dimension for this system must be five. We also treat a more general random network on the square lattice containing resistors and diodes of arbitrary orientation. Duality arguments are applied to obtain exact results for the location of phase transitions in this system. We then use a position-space renormalization-group approach to map out the phase diagram and calculate critical exponents. This system has an isotropic percolating phase, and phases which percolate in only one direction. Novel types of transitions occur between these phases, in which the diode orientation plays a fundamental role. These percolating phases meet with the nonpercolating phase along a line of multicritical points, where concentration and orientational fluctuations are simultaneously critical.

  8. Spectrometry and dosimetry of fast neutrons using pin diode detectors

    Energy Technology Data Exchange (ETDEWEB)

    Zaki Dizaji, H., E-mail: hz.dizaji@znu.ac.ir [Physics Department, Faculty of Science, Zanjan University, Zanjan (Iran, Islamic Republic of); Kakavand, T. [Physics Department, Faculty of Science, International Imam Khomeini University, Qazvin (Iran, Islamic Republic of); Abbasi Davani, F. [Radiation Application Department, Shahid Beheshti University, Tehran (Iran, Islamic Republic of)

    2014-03-21

    Elastic scattering of light nuclei, especially hydrogen, is widely used for detection of fast neutrons. Semiconductor devices based on silicon detectors are frequently used for different radiation detections. In this work, a neutron spectrometer consisting of a pin diode coupled with a polyethylene converter and aluminum degrader layers has been developed. Aluminum layers are used as discriminators of different neutron energies for detectors. The response of the converter–degrader–pin diode configuration, the optimum thickness of the converter and the degrader layers have been extracted using MCNP and SRIM simulation codes. The possibility of using this type of detector for fast neutron spectrometry and dosimetry has been investigated. A fairly good agreement was seen between neutron energy spectrum and dose obtained from our configurations and these specifications from an {sup 241}Am–Be neutron source. - Highlights: • Silicon pin diodes are applied to the fast neutron detection. • The technique of converter degrader pin diode is used for spectrometry of fast neutrons. • The method is used for dosimetry of fast neutron.

  9. High-performance vertical Si PiN diode by hole remaining mechanism

    Science.gov (United States)

    Tsukuda, Masanori; Baba, Akiyoshi; Shiba, Yuji; Omura, Ichiro

    2017-03-01

    A novel diode with a unique trench shape is predicted by TCAD simulation to have high performance. The novel 600 V vertical PiN diode with hole pockets by the Bosch deep trench process shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the conventional PiN diode in the same forward voltage. Thanks to the hole pockets with an electric field in the diagonal direction, the remaining hole suppresses the surge voltage with noise for high performance. In this paper, we specially focus on the analysis of phenomenon and the noise suppression mechanism during reverse recovery. The novel diode structure is a strong candidate when developing the fabrication process after silicon trench etching is established.

  10. Electron trap annealing in neutron transmutation doped silicon

    DEFF Research Database (Denmark)

    Guldberg, J.

    1977-01-01

    Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

  11. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang;

    2013-01-01

    and will be 80% in near future. This challenge strongly has motivated replacing electrical interconnects with optical ones even in chip level communications [1]. This chip-level optical interconnects need quite different performance of optoelectronic devices than required for conventional optical communications....... For a light source, the energy consumption per sending a bit is required to be laser diode...... and light-emitting diode (LED) structures have been proposed so far. Our hybrid laser is one of these efforts [2]. The hybrid laser consists of a dielectric reflector, a III-V semiconductor active material, and a high-index-contrast grating (HCG) reflector formed in the silicon layer of a silicon...

  12. Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

    Energy Technology Data Exchange (ETDEWEB)

    Umadevi, P. [Department of Physics, Sri Vidya College of Engineering & Technology, Virudhunagar 626005, Tamilnadu (India); Prithivikumaran, N., E-mail: janavi_p@yahoo.com [Nanoscience Research Lab, Department of Physics, VHNSN College, Virudhunagar 626001, Tamilnadu (India)

    2016-11-15

    The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol–gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current–voltage (I–V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.

  13. Electrical parameters of metal doped n-CdO/p-Si heterojunction diodes

    Science.gov (United States)

    Umadevi, P.; Prithivikumaran, N.

    2016-11-01

    The CdO, Al doped CdO and Cu doped CdO thin films were coated on p-type silicon substrates by sol-gel spin coating method. The structural, surface morphological and electrical properties of undoped, Al and Cu doped CdO films on silicon substrate were studied. The Ag/CdO/p-Si, Ag/Al: CdO/p-Si and Ag/Cu: CdO/p-Si heterojunction diodes were fabricated and the diode parameters such as reverse saturation current, barrier height and ideality factor of the diodes were investigated by current-voltage (I-V)characteristics. The reverse current of the diode was found to increase strongly with the doping. The values of barrier height and ideality factor were decreased by doping with aluminium and copper. Photo response of the heterojunction diodes was studied and it was found that, the heterojunction diode constructed with the doped CdO has larger Photo response than the undoped heterojunction diode.

  14. The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

    Directory of Open Access Journals (Sweden)

    Meisam Rahmani

    2013-01-01

    Full Text Available Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking and metal (AA stacking layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

  15. Annealing Studies of magnetic Czochralski silicon radiation detectors

    CERN Document Server

    Pellegrini, G; Fleta, C; Lozano, M; Rafí, J M; Ullán, M

    2005-01-01

    Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrónica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic and they have a nominal resistivity of 1 kΩ cm. Diodes were characterized by reverse current and capacitance measurements before and after irradiations. The MCZ diodes were irradiated in a 24 GeV proton beam at CERN PS facilities and their annealing behavior with time was compared to that shown by oxygenated FZ diodes processed in the same way. FZ and MCZ diodes were irradiated up to fluences of 1016 p/cm2 which corresponds to the maximum fluence foreseen in the inner part of the future ATLAS upgrade in view of a Super-LHC with an increase in the luminosity.

  16. Silicon spintronics.

    Science.gov (United States)

    Jansen, Ron

    2012-04-23

    Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

  17. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Boeckl, John J.; Hellerstedt, Jack; Fuhrer, Michael S.; Iacopi, Francesca

    2016-07-01

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High-resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  18. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

  19. Numerical simulation of 60Co-gamma irradiation effects on electrical characteristics of n-type FZ silicon X-ray detectors

    Science.gov (United States)

    Vigneshwara Raja, P.; Rao, C. V. S.; Narasimha Murty, N. V. L.

    2016-07-01

    This paper describes the gamma irradiation effects on the electrical characteristics of n-type float zone (FZ) silicon detectors by incorporating a 4-level 60Co-gamma radiation damage model in the commercial device simulator for plasma X-ray tomography diagnostics. In the simulations, a segmented n-type silicon detector (i.e. p+-n-n+ structure) is considered with varying substrate resistivity (ρ = 5.4, 2.5, and 0.3 kΩ cm). The simulation results have been validated with the reported experimental measurements carried out on similar device structures. The 60Co-gamma irradiation induced changes in the electrical characteristics of the detectors are analyzed up to the dose of 3500 Mrad. The possible gamma induced degradation in the X-ray response of the detectors is investigated from the changes in the effective doping concentration and the leakage current of the detectors. The survival of the gamma irradiated detectors is predicted from the simulation studies. The comparison between the 60Co-gamma and 14.1 MeV neutron irradiation effects (typical fusion environments) on silicon detectors is attempted.

  20. Si-C Linked Organic Monolayers on Crystalline Silicon Surfaces as Alternative Gate Insulators

    NARCIS (Netherlands)

    Faber, Erik J.; Smet, de Louis C.P.M.; Olthuis, Wouter; Zuilhof, Han; Sudhölter, Ernst J.R.; Bergveld, Piet; Berg, van den Albert

    2005-01-01

    Herein, the influence of silicon surface modification via Si-CnH2n+1 (n=10,12,16,22) monolayer-based devices on p-type (100) and n-type (100) silicon is studied by forming MIS (metal–insulator–semiconductor) diodes using a mercury probe. From current density–voltage (J–V) and capacitance–voltage (C–

  1. Detached Solidification of Germanium-Silicon Crystals on the ISS

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  2. Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

    Science.gov (United States)

    Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

    2010-01-01

    This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

  3. Electrical properties of as-grown and proton-irradiated high purity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Jerzy, E-mail: krupka@imio.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Karcz, Waldemar [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna (Russian Federation); Kamiński, Paweł [Institute of Electronic Materials Technology, Wólczyńska 13, 301-919 Warsaw (Poland); Jensen, Leif [Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund (Denmark)

    2016-08-01

    The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE{sub 011} and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.

  4. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science Investigation

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  5. Neutron induced defects in silicon detectors characterized by DLTS and TSC methods

    Energy Technology Data Exchange (ETDEWEB)

    Fretwurst, E. [Hamburg Univ. (Germany). 1. Inst. fuer Experimentalphysik; Dehn, C. [Hamburg Univ. (Germany). 1. Inst. fuer Experimentalphysik; Feick, H. [Hamburg Univ. (Germany). 1. Inst. fuer Experimentalphysik; Heydarpoor, P. [Hamburg Univ. (Germany). 1. Inst. fuer Experimentalphysik; Lindstroem, G. [Hamburg Univ. (Germany). 1. Inst. fuer Experimentalphysik; Moll, M. [Hamburg Univ. (Germany). 1. Inst. fuer Experimentalphysik; Schuetze, C. [Hamburg Univ. (Germany). 1. Inst. fuer Experimentalphysik; Schulz, T. [Hamburg Univ. (Germany). 1. Inst. fuer Experimentalphysik

    1996-08-01

    Neutron induced defects in silicon detectors fabricated from n-type float zone material of different resistivity (100-6000 {Omega} cm) have been studied using the C-DLTS (capacitance-deep level transient spectroscopy) and TSC (thermally stimulated current) method. While the application of the C-DLTS technique for high resistivity material is limited to neutron fluences below about 10{sup 11} cm{sup -2} the TSC method remains a powerful tool for the defect characterization even at high fluences. Up to 5 defect levels were observed in some of the unirradiated samples. These partly are due to thermal treatments during the fabrication process. After neutron irradiation defect levels at E{sub c}-0.17, -0.23 and -0.42 eV and at E{sub v}+0.36 eV were found. A detailed analysis of the predominant peak at about -0.42 eV has shown that it is a superposition of two levels at -0.39 and -0.42 eV. For these defect levels introduction rates, annealing effects and a comparison between the DLTS and TSC technique are presented. Possible correlations of these results with macroscopic detector properties are discussed. (orig.).

  6. Characterization and Performance of Silicon n-in-p Pixel Detectors for the ATLAS Upgrades

    CERN Document Server

    Weigell, Philipp; Gallrapp, Christian; La Rosa, Alessandro; Macchiolo, Anna; Nisius, Richard; Pernegger, Heinz; Richter, Rainer

    2011-01-01

    The existing ATLAS Tracker will be at its functional limit for particle fluences of 10^15 neq/cm^2 (LHC). Thus for the upgrades at smaller radii like in the case of the planned Insertable B-Layer (IBL) and for increased LHC luminosities (super LHC) the development of new structures and materials which can cope with the resulting particle fluences is needed. N-in-p silicon devices are a promising candidate for tracking detectors to achieve these goals, since they are radiation hard, cost efficient and are not type inverted after irradiation. A n-in-p pixel production based on a MPP/HLL design and performed by CiS (Erfurt, Germany) on 300 \\mu m thick Float-Zone material is characterised and the electrical properties of sensors and single chip modules (SCM) are presented, including noise, charge collection efficiencies, and measurements with MIPs as well as an 241Am source. The SCMs are built with sensors connected to the current the ATLAS read-out chip FE-I3. The characterisation has been performed with the ATL...

  7. Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology

    NARCIS (Netherlands)

    Lee, M.J.; Sun, P.; Charbon, E.

    2015-01-01

    We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several

  8. Narrow-linewidth lasers on a silicon chip

    NARCIS (Netherlands)

    Bernhardi, Edward H.; Pollnau, Markus; Di Bartolo, Baldassare; Collins, John; Silvestri, Luciano

    2015-01-01

    Diode-pumped distributed-feedback (DFB) channel waveguide lasers were demonstrated in Er3+-doped and Yb3+-doped Al2O3 on standard thermally ox-idized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into the SiO2 top cladding. The

  9. Narrow-linewidth lasers on a silicon chip

    NARCIS (Netherlands)

    Bernhardi, Edward; Pollnau, Markus; Di Bartolo, Baldassare; Collins, John; Silvestri, Luciano

    2015-01-01

    Diode-pumped distributed-feedback (DFB) channel waveguide lasers were demonstrated in Er3+-doped and Yb3+-doped Al2O3 on standard thermally ox-idized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into the SiO2 top cladding. The

  10. Hyperchaos via X-Diode

    DEFF Research Database (Denmark)

    Lindberg, Erik; Tamasevicius, A.; Cenys, A.

    1998-01-01

    A Chaos diode (X-diode) with a hysteric current-voltage characteristic has been used to generate hyperchaotic oscillations characterized with multiple positive Lyapunov exponents. The hyperchaotic oscillators comprise a X-diode in parallel with an M'th order LC loop (M.GE.4). Numerical simulations...... and hardware experiments have beeen performed. An appropriate mathematical model is provided and is used to calculate the Lyapunov exponents. Synchronization properties have been investigated....

  11. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  12. Electron dosimetry in irradiation processing with rad-hard diodes; Dosimetria de eletrons em processos de irradiacao com diodos resistentes a danos de radiacao

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Thais Cavalheri dos

    2012-07-01

    This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar Registered-Sign window and LEMO Registered-Sign connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for

  13. Towards upconversion for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    de Wild, J.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Meijerink, A. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Condensed Matter and Interfaces, P.O. Box 80000, 3508 TA Utrecht (Netherlands); van Sark, W.G.J.H.M. [Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands)

    2010-11-15

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR-vis upconverter {beta}-NaYF{sub 4}:Yb{sup 3+}(18%) Er{sup 3+}(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current-voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 {mu}A/cm{sup 2} was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon. (author)

  14. Full-color OLED on silicon microdisplay

    Science.gov (United States)

    Ghosh, Amalkumar P.

    2002-02-01

    eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

  15. High-voltage (> 1 kV) SiC Schottky barrier diodes with low on-resistance

    Energy Technology Data Exchange (ETDEWEB)

    Kimoto, Tsunenobu; Urushidani, Tatsuo; Kobayashi, Sota; Matsunami, Hiroyuki (Kyoto Univ. (Japan). Dept. of Electrical Engineering)

    1993-12-01

    Au/6H-SiC Schottky barrier diodes with high blocking voltages were successfully fabricated using layers grown by step-controlled epitaxy. A breakdown voltage over 1,100 V could be achieved, which is the highest ever reported for silicon carbide (SiC) Schottky barrier diodes. These high-voltage SiC rectifiers had specific on-resistances lower than the theoretical limits of Si rectifiers by more than one order of magnitude. The specific on-resistance increased with temperature according to T[sup 2.0] dependence. The diodes showed good characteristics at temperature as high as 400 C.

  16. A 55-kW Three-Phase Inverter with Si IGBTs and SiC Schottky Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, Leon M [ORNL; Ozpineci, Burak [ORNL; Chinthavali, Madhu Sudhan [ORNL; Mantooth, Homer A [ORNL; Kashyap, Avinash S [ORNL

    2009-01-01

    Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.

  17. A 55 kW Three-Phase Inverter With Si IGBT s and SiC Schottky Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ozpineci, Burak [ORNL; Chinthavali, Madhu Sudhan [ORNL; Tolbert, Leon M [ORNL; Kashyap, Avinash S [ORNL; Mantooth, Homer A [ORNL

    2006-01-01

    Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.

  18. Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride

    Science.gov (United States)

    Serpenguzel, Ali; Aydinli, Atilla; Bek, Alpan

    1998-07-01

    Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.

  19. Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

    Science.gov (United States)

    Inglese, Alessandro; Lindroos, Jeanette; Vahlman, Henri; Savin, Hele

    2016-09-01

    The presence of copper contamination is known to cause strong light-induced degradation (Cu-LID) in silicon. In this paper, we parametrize the recombination activity of light-activated copper defects in terms of Shockley—Read—Hall recombination statistics through injection- and temperature dependent lifetime spectroscopy (TDLS) performed on deliberately contaminated float zone silicon wafers. We obtain an accurate fit of the experimental data via two non-interacting energy levels, i.e., a deep recombination center featuring an energy level at Ec-Et=0.48 -0.62 eV with a moderate donor-like capture asymmetry ( k =1.7 -2.6 ) and an additional shallow energy state located at Ec-Et=0.1 -0.2 eV , which mostly affects the carrier lifetime only at high-injection conditions. Besides confirming these defect parameters, TDLS measurements also indicate a power-law temperature dependence of the capture cross sections associated with the deep energy state. Eventually, we compare these results with the available literature data, and we find that the formation of copper precipitates is the probable root cause behind Cu-LID.

  20. Diode laser applications in urology

    Science.gov (United States)

    Sam, Richard C.; Esch, Victor C.

    1995-05-01

    Diode lasers are air-cooled, efficient, compact devices which have the potential of very low cost when produced in quantity. The characteristics of diode lasers are discussed. Their applications in interstitial thermal treatment of the prostate, and laser ablation of prostate tissues, will be presented.

  1. Silicon Spintronics

    NARCIS (Netherlands)

    Jansen, R.

    2008-01-01

    Integration of magnetism and mainstream semiconductor electronics could impact information technology in ways beyond imagination. A pivotal step is implementation of spin-based electronic functionality in silicon devices. Remarkable progress made during the last two years gives confidence that this

  2. Crystalline silicon cell performance at low light intensities

    Energy Technology Data Exchange (ETDEWEB)

    Reich, N.H.; van Sark, W.G.J.H.M.; Alsema, E.A.; Turkenburg, W.C. [Utrecht University, Faculty of Science, Copernicus Institute for Sustainable Development and Innovation, Department of Science, Techonology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands); Lof, R.W.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Device, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht (Netherlands); Sinke, W.C. [Energy research Centre of the Netherlands (ECN), P.O. Box 1, 1755 ZG Petten (Netherlands)

    2009-09-15

    Measured and modelled JV characteristics of crystalline silicon cells below one sun intensity have been investigated. First, the JV characteristics were measured between 3 and 1000 W/m{sup 2} at 6 light levels for 41 industrially produced mono- and multi-crystalline cells from 8 manufacturers, and at 29 intensity levels for a single multi-crystalline silicon between 0.01 and 1000 W/m{sup 2}. Based on this experimental data, the accuracy of the following four modelling approaches was evaluated: (1) empirical fill factor expressions, (2) a purely empirical function, (3) the one-diode model and (4) the two-diode model. Results show that the fill factor expressions and the empirical function fail at low light intensities, but a new empirical equation that gives accurate fits could be derived. The accuracy of both diode models are very high. However, the accuracy depends considerably on the used diode model parameter sets. While comparing different methods to determine diode model parameter sets, the two-diode model is found to be preferred in principle: particularly its capability in accurately modelling V{sub OC} and efficiency with one and the same parameter set makes the two-diode model superior. The simulated energy yields of the 41 commercial cells as a function of irradiance intensity suggest unbiased shunt resistances larger than about 10 k{omega} cm{sup 2} may help to avoid low energy yields of cells used under predominantly low light intensities. Such cells with diode currents not larger than about 10{sup -9} A/cm{sup 2} are excellent candidates for Product Integrated PV (PIPV) appliances. (author)

  3. Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

    Directory of Open Access Journals (Sweden)

    Gammon P.M.

    2017-01-01

    Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

  4. Gallium phosphide high temperature diodes

    Science.gov (United States)

    Chaffin, R. J.; Dawson, L. R.

    1981-01-01

    High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  5. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  6. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M

    1981-01-01

    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  7. Silicon Schottky photovoltaic diodes for solar energy conversion

    Science.gov (United States)

    Anderson, W. A.

    1975-01-01

    Various factors in Schottky barrier solar cell fabrication are evaluated in order to improve understanding of the current flow mechanism and to isolate processing variables that improve efficiency. Results of finger design, substrate resistivity, surface finishing and activation energy studies are detailed. An increased fill factor was obtained by baking of the vacuum system to remove moisture.

  8. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    Directory of Open Access Journals (Sweden)

    Michael A. Marrs

    2016-07-01

    Full Text Available Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  9. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    Science.gov (United States)

    Marrs, Michael A; Raupp, Gregory B

    2016-07-26

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  10. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    Science.gov (United States)

    Marrs, Michael A.; Raupp, Gregory B.

    2016-01-01

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

  11. Angled stripe superluminescent diode

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, L.; Morrison, C.B.; Zinkiewicz, L.M.; Niesen, J.W.

    1989-08-08

    This patent describes a superluminescent light-emitting diode device having high power output and high spectral bandwidth. The device comprising: a semiconductor structure including at least one channel region formed in a semiconductor substrate and filled with a first semiconductor cladding layer of material having a higher index of refraction than substrate material outside the channel region, to provide lateral index-guiding of light within the channel region. The semiconductor structure also including a second semiconductor cladding layer of opposite conductivity type to the first, an active semiconductor layer at a junction between the first and second semiconductor cladding layers, and at least one emitting facet formed at a channel end; means for applying an electrical forward-bias voltage across the junction to produce emission of light; and wherein the channel is slightly inclined to a direction normal to the facet, to suppress lasing within the device, which can then operated at high powers and a broad spectral width.

  12. Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics

    Science.gov (United States)

    Kanechika, Masakazu; Mitsushima, Yasuichi

    2000-12-01

    A new process to fabricate a silicon needle, whose tip radius is about 5 nm and aspect ratio is about 7, was developed. The silicon needles were fabricated by highly selective anisotropic dry etching. The etching mask was oxygen precipitation, which was formed by nitrogen ion implantation and the subsequent oxidation. The process is simple enough to be integrated with complementary metal-oxide-semiconductor (CMOS) circuits. The density of the silicon needle can be controlled by adjusting the dose for nitrogen ion implantation. The position of the silicon needle can be controlled by adjusting the position for nitrogen ion implantation, because silicon needles are formed only in the nitrogen ion implantation area. Furthermore, using these silicon needles as micro emitters, a field emission diode was fabricated. The Fowler-Nordheim plot shows that the field around the tip of the silicon needles was highly enhanced.

  13. Temperature dependant electrical properties of formyl-TIPPCu(II)/p-Si heterojunction diode

    Science.gov (United States)

    Khan, Dil Nawaz; Sayyad, Muhammad Hassan; Wahab, Fazal; Tahir, Muhammad; Yaseen, Muhammad; Munawar, Munawar Ali; Ali, Mukhtar

    2014-05-01

    This paper reports the temperature dependent electrical characterization of formyl-TIPPCu(II)/p-Si heterojunction diode which was fabricated by growing thin films of formyl-TIPPCu(II) on the p-type silicon substrate by thermal sublimation technique. The variation in electrical characteristics of the fabricated devices has been systematically investigated as the function of temperature by using current-voltage (I-V) measurements in the temperature range 299-339 K. The diode parameters like ideality factor, zero bias barrier height and parasitic series resistance have been found to be strongly temperature dependant. The zero bias barrier height increases while ideality factor and series resistance decreases with increasing temperature.

  14. Diode laser-assisted endoscopic dacryocystorhinostomy: a comparison of three different combinations of adjunctive procedures.

    Science.gov (United States)

    Dogan, Remzi; Meric, Aysenur; Ozsütcü, Mustafa; Yenigun, Alper

    2013-08-01

    Chronic dacryocystitis is a frequently encountered condition which can be corrected by dacryocystorhinostomy. Today, the diode laser is increasingly put to use in such corrective operations. This study aims to answer the questions of which adjunctive procedures and which combinations of such procedures are necessary and effective in securing more successful outcomes in diode laser dacryocystorhinostomy. This prospective randomized study included eighty patients (13 male, 67 female) who underwent dacryocystorhinostomy in our hospital during the 2 year period of January 2009-January 2011. The patients were selected consecutively and were randomly allocated to three groups. Group 1 (30): diode laser + mitomycin C + silicone intubation; Group 2 (27): diode laser + silicone intubation; Group 3 (23): diode laser + mitomycin C. All patients were evaluated postoperatively on day 1, week 1, and on the 1st, 3rd, 6th, 12th, 18th, and 24th months. The postoperative evaluation consisted of preoperative and postoperative ostium measurements, recording postoperative complications, and calculating and comparing success rates and operative times. The mean ages of the patients were 63.4 for Group 1, 60.7 for Group 2, and 61.8 for Group 3. No statistically significant difference was found among the groups regarding pre- and postoperative ostium measurements. The success rates were 84.3, 80, and 76.9 % for Groups 1, 2, and 3, respectively. Complications noted in Group 1 were restenosis (3), premature silicone tube loss (1), development of granulation tissue (3), synechia (2), infection (2), and hemorrhage (3). Those for Group 2 were restenosis (5), premature tube loss (2), granulation (8), synechia (6), infection (3), and hemorrhage (4). Group 3 had 6 cases with stenosis, 5 with granulation, 3 with infection, 6 with synechia, and 5 with hemorrhage. The operative times of the groups were 25.5, 15.3, and 18.1 min, respectively, for Group 1, 2, and 3. All three groups had statistically

  15. Electronic modulated beam-steerable silicon waveguide array antenna

    Energy Technology Data Exchange (ETDEWEB)

    Horn, R.E.; Jacobs, H.; Freibergs, E.; Klohn, K.L.

    1980-06-01

    The design and experimental findings for a low-cost easily fabricated millimeter-wave line scanner is described. This antenna consists of a 1-mm X 1-mm silicon dielectric rod with a metal grating (periodic structure) on the upper surface and p-i-n diodes mounted on the sidewall. A narrow 8/sup 0/ beam is radiated from the grated (perturbed) surface at an angle dependent on the guide and perturbation spacing. The beam angle is switched over a 10/sup 0/ angle by application of a dc forward current through the p-i-n diode modulators.

  16. Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

    CERN Document Server

    Casse, G L; Hanlon, M

    2000-01-01

    The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high-grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of reverse current (I/sub r/) and full depletion voltage (V/sub fd/) as a function of fluence. The oxygenated devices from different suppliers with a variety of starting materials and techniques, all show a consistent improvement of the degradation rate of V/sub fd/ and CCE compared to un- oxygenated substrate devices. Radiation damage of n-type detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon bulk (type inversion) at a neutron equivalent fluence of a few 10/sup 13/ cm/sup -2/. The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction is avoided using silicon detec...

  17. Photoluminescence and carrier transport mechanisms of silicon-rich silicon nitride light emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Wugang [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Yao, Wei [Shenzhen Institute of Huazhong University of Science and Technology, Shenzhen 518000 (China); Wen, Xixing [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2015-10-01

    Highlights: • Amorphous silicon quantum dots (a-Si QDs) embedded in silicon nitride were fabricated using plasma-enhanced chemical vapor deposition (PECVD). • Two different excitation sources were used to investigate the PL mechanisms. • Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated and the carrier transport mechanisms were investigated. - Abstract: Silicon-rich silicon nitride (SRSN) films were prepared on p-type silicon substrates using plasma-enhanced chemical vapor deposition (PECVD). Small size (∼3 nm) amorphous silicon quantum dots (a-Si QDs) were obtained after 1100 °C annealing. Two different excitation sources, namely 325 nm and 532 nm lasers, were introduced to investigate the photoluminescence (PL) properties. The PL bands pumped by 325 nm laser at ∼2.90 eV and ∼1.80 eV were contributed to the radiative centers from N dangling bonds (DBs), while the dominant PL bands at 2.10 eV were ascribed to the instinct PL centers in the nitride matrix. However, PL emissions from band tail luminescence and quantum confined effect (QCE) in a-Si QDs were found under the excitation of 532 nm laser. Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated. Intensely red light emission was observed by naked eyes at room temperature under forward 20 V. Three different carrier transport mechanisms, namely Poole–Frenkel (P–F) tunneling, Fowler–Nordheim (F–N) tunneling and space charge limited current (SCLC), were found to fit different electric field regions. These results help to understand the PL mechanisms and to optimize the fabrication of a-Si QD LED.

  18. Diode-pumped dye laser

    Science.gov (United States)

    Burdukova, O. A.; Gorbunkov, M. V.; Petukhov, V. A.; Semenov, M. A.

    2016-10-01

    This letter reports diode pumping for dye lasers. We offer a pulsed dye laser with an astigmatism-compensated three-mirror cavity and side pumping by blue laser diodes with 200 ns pulse duration. Eight dyes were tested. Four dyes provided a slope efficiency of more than 10% and the highest slope efficiency (18%) was obtained for laser dye Coumarin 540A in benzyl alcohol.

  19. A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

    NARCIS (Netherlands)

    Lee, M.J.; Sun, P.; Charbon, E.

    2015-01-01

    This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring

  20. Radiation sensitivity of silicon imaging sensors on missions to the outer planets.

    Science.gov (United States)

    Brucker, G. J.; Cope, A. D.

    1972-01-01

    Review of the results of an investigation of the magnitude of the degradation effects of radiation on the operating characteristics of camera tubes using silicon diode arrays in the space environment, and discussion of the radiation damage mechanisms concerned. The effects produced by bombardment of bare-silicon-diode arrays or vidicon tubes with 85-kV X rays, Cobalt 60 gamma rays, 1 MeV and 11 MeV electrons, 3 MeV and 142 MeV protons, and reactor neutrons are presented. Interference effects produced by radiation bombardment during operation of television tubes are investigated, and limiting fluxes of electrons and protons are given.

  1. Spreading resistance and C-DLTS spectra of proton-irradiated mesa diodes made on thick epitaxial Si layers

    Energy Technology Data Exchange (ETDEWEB)

    Nossarzewska-Orlowska, E. E-mail: nossar_e@sp.itme.edu.pl; Kozlowski, R.; Brzozowski, A

    1999-04-21

    High-resistivity, thick silicon epitaxial layers, deposited on Czochralski silicon (CZ Si) substrate were used as a material for test diodes. Resistivity profile as a function of depth and deep-level spectra were measured by spreading resistance method and deep-level transient spectroscopy (C-DLTS) on non-irradiated and proton irradiated mesa diodes. A deep level with activation energy E{sub c}-0.52 eV, attributed to V{sub 2}O defect, dominates in the non-irradiated diodes. After irradiation two levels, E{sub c}-0.38 and E{sub c}-0.45 eV, related to divacancies and the level E{sub c}-0.17 eV corresponding to VO complex are distinguished.

  2. Spreading resistance and C-DLTS spectra of proton-irradiated mesa diodes made on thick epitaxial Si layers

    CERN Document Server

    Nossarzhevska, E; Brzozowski, A

    1999-01-01

    High-resistivity, thick silicon epitaxial layers, deposited on Czochralski silicon (CZ Si) substrate were used as a material for test diodes. Resistivity profile as a function of depth and deep-level spectra were measured by spreading resistance method and deep-level transient spectroscopy (C-DLTS) on non-irradiated and proton irradiated mesa diodes. A deep level with activation energy E sub c -0.52 eV, attributed to V sub 2 O defect, dominates in the non-irradiated diodes. After irradiation two levels, E sub c -0.38 and E sub c -0.45 eV, related to divacancies and the level E sub c -0.17 eV corresponding to VO complex are distinguished.

  3. Spreading resistance and C-DLTS spectra of proton-irradiated mesa diodes made on thick epitaxial Si layers

    Science.gov (United States)

    Nossarzewska-Orłowska, E.; Kozłowski, R.; Brzozowski, A.

    1999-04-01

    High-resistivity, thick silicon epitaxial layers, deposited on Czochralski silicon (CZ Si) substrate were used as a material for test diodes. Resistivity profile as a function of depth and deep-level spectra were measured by spreading resistance method and deep-level transient spectroscopy (C-DLTS) on non-irradiated and proton irradiated mesa diodes. A deep level with activation energy E c-0.52 eV, attributed to V 2O defect, dominates in the non-irradiated diodes. After irradiation two levels, Ec-0.38 and Ec-0.45 eV, related to divacancies and the level Ec-0.17 eV corresponding to VO complex are distinguished.

  4. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

    1994-10-01

    We describe the characteristics of thin (1 {mu}m) and thick (>30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed.

  5. Comparison of Transcanalicular Multidiode Laser Dacryocystorhinostomy with and without Silicon Tube Intubation

    Directory of Open Access Journals (Sweden)

    Yildiray Yildirim

    2016-01-01

    Full Text Available Aim. To compare the surgical outcomes of surgery with and without bicanalicular silicon tube intubation for the treatment of patients who have primary uncomplicated nasolacrimal duct obstruction. Methods. This retrospective study is comprised of 113 patients with uncomplicated primary nasolacrimal duct obstruction. There were 2 groups in the study: Group 1 (n=58 patients underwent transcanalicular diode laser dacryocystorhinostomy surgery with bicanalicular silicon tube intubation and Group 2 (n=55 patients underwent transcanalicular diode laser dacryocystorhinostomy surgery without bicanalicular silicon tube intubation. The follow-up period was 18.42±2.8 months for Group 1 and 18.8±2.1 months for Group 2. Results. Success was defined by irrigation of the lacrimal system without regurgitation and by the absence of epiphora. Success rates were 84.4% for Group 1 and 63.6% for Group 2 (P=0.011. Statistically a significant difference was found between the two groups. Conclusion. The results of the study showed that transcanalicular diode laser dacryocystorhinostomy surgery with bicanalicular silicon tube intubation was more successful than the other method of surgery. Consequently, the application of silicone tube intubation in transcanalicular diode laser dacryocystorhinostomy surgery is recommended.

  6. LED pumped micron-scale all-silicon Raman amplifier

    Science.gov (United States)

    Datta, Tanmoy; Sen, Mrinal

    2017-10-01

    A micron-scale all-silicon Raman amplifier has been proposed in this paper, exploiting the giant Raman gain of silicon nanocrystal material along with the extreme optical confinement of slotted photonic crystal waveguide. Light Emitting Diode (LED) has been considered here for low-cost optical pumping and the possibility of on-chip integration. At the same time, LED pumping eradicates the temporal impairment of output pulses which is otherwise unavoidable in case of continuous wave laser pumping. An overall gain of 3.22 dB has been achieved for a 400 Gbps input pulse train with a waveguide length of the amplifier which is as small as 4 μm. Moreover, the strong electroluminescence of silicon nanocrystal opens up the possibility of integrating the pump source on the same platform and, hence, expedites the future scope of realizing micron-scale silicon Raman laser without external pump source.

  7. Nickel-gallium arsenide high-voltage power Schottky diodes

    Science.gov (United States)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.

    1993-01-01

    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  8. Light Emitting Diodes (LEDs)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  9. Using Si Diodes To Detect H2 Liquid/Vapor Interfaces

    Science.gov (United States)

    Dempsey, Paula Jean; Fabik, Richard

    1994-01-01

    Commercially available silicon-diode temperature sensors used to detect interfaces between hydrogen liquid and hydrogen vapor at steady-state saturation conditions. Sensors mounted at short intervals along rod to form rake-like array. Array inserted in tank with rod oriented vertically, where it senses level of liquid hydrogen to resolution equal to interval between sensors. Basic idea to measure voltage across sensor while supplying small electric current that heats sensor. Because vapor cools sensor less effectively than liquid does, sensor's steady-state temperature greater when sensor surrounded by vapor than when immersed in liquid. Voltage output decreases as temperature increases for silicon diodes. Thus, temperature (voltage) reading used to determine whether liquid level above or below sensor.

  10. Degradation of the Adhesive Properties of MD-944 Diode Tape by Simulated Low Earth Orbit Environmental Factors

    Science.gov (United States)

    Albyn, K.; Finckenor, M.

    2006-01-01

    The International Space Station (ISS) solar arrays utilize MD-944 diode tape with silicone pressure-sensitive adhesive to protect the underlying diodes and also provide a high-emittance surface. On-orbit, the silicone adhesive will be exposed and ultimately convert to a glass-like silicate due to atomic oxygen (AO). The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 mo or more). The exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. The Environmental Effects Branch at Marshall Space Flight Center, under direction from the ISS Program Office Environments Team, performed simulated space environment exposures with 5-eV AO, near ultraviolet radiation and ionizing radiation. The exposed diode tape samples were put under preload and then the resulting blocking force was measured using a tensile test machine. Test results indicate that high-energy AO, ultraviolet radiation, and electron ionizing radiation exposure all reduce the blocking force for a silicone-to-silicone bond. AO exposure produces the most significant reduction in blocking force

  11. Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

    Institute of Scientific and Technical Information of China (English)

    Hongjian Li (李宏建); Baiyun Huang (黄伯云); Danqing Yi (易丹青); Haoyang Gui (崔昊杨); Jingcui Peng (彭景翠)

    2003-01-01

    We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline.Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600 - 803 nm with a peak at 690 nm.

  12. A solution state diode using semiconductor polymer nanorods with nanogap electrodes.

    Science.gov (United States)

    Mutlu, Senol; Sonmez, Bedri Gurkan

    2012-06-22

    A solution state polymer diode, which uses regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT):dichlorobenzene solution as the semiconductor between highly doped p-type silicon and aluminum electrodes has been built. Electrodes separated by a 40 nm gap enable intra-chain charge carrier transfer through the lengths of single polymer chains. This prevents chain to chain hopping and chain entanglements, increasing carrier mobility. The degradation with time and hysteresis effects of the diodes are measured. An optimal P3HT solution concentration of 6 mg ml(-1) is found. A current density of at least 300 mA cm(-2) is achieved, indicating at least a six-fold improvement in carrier mobility compared to previously fabricated solid state P3HT diodes.

  13. Optical diode action from axially asymmetric nonlinearity in an all-carbon solid-state device.

    Science.gov (United States)

    Anand, Benoy; Podila, Ramakrishna; Lingam, Kiran; Krishnan, S R; Siva Sankara Sai, S; Philip, Reji; Rao, Apparao M

    2013-01-01

    Nanostructured carbons are posited to offer an alternative to silicon and lead to further miniaturization of photonic and electronic devices. Here, we report the experimental realization of the first all-carbon solid-state optical diode that is based on axially asymmetric nonlinear absorption in a thin saturable absorber (graphene) and a thin reverse saturable absorber (C60) arranged in tandem. This all-optical diode action is polarization independent and has no phase-matching constraints. The nonreciprocity factor of the device can be tuned by varying the number of graphene layers and the concentration or thickness of the C60 coating. This ultracompact graphene/C60 based optical diode is versatile with an inherently large bandwidth, chemical and thermal stability, and is poised for cost-effective large-scale integration with existing fabrication technologies.

  14. Energy and angular anisotropy optimisation of a p-type diode for in vivo dosimetry in photon-beam radiotherapy.

    Science.gov (United States)

    Greene, Simon; Price, Robert A

    2005-01-01

    We present simulation work using the Monte Carlo code MCNPX that shows that there is a possibility of improving the silicon p-type diode as a radiation dosemeter, by altering the construction of the diode. Altering the diode die thickness can reduce the inherent angular anisotropy of the diode, with little effect on its energy response. Conversely, the contact material and geometry have a large impact on the energy response with little effect on the inherent angular anisotropy. By correct choice of contact material, the typical over-response -100 keV relative to the response at 60Co energy can be reduced from approximately 20 to 4. It is expected that further enhancements may be made with different geometries and materials.

  15. Raman-assisted coherent, mid-infrared frequency combs in silicon microresonators

    CERN Document Server

    Griffith, Austin G; Okawachi, Yoshitomo; Cardenas, Jaime; Mohanty, Aseema; Gaeta, Alexander L; Lipson, Michal

    2016-01-01

    We demonstrate the first low-noise mid-IR frequency comb source using a silicon microresonator. Our observation of strong Raman scattering lines in the generated comb suggests that Raman and four-wave mixing interactions play a role in assisting the transition to the low-noise state. In addition, we characterize, the intracavity comb generation dynamics using an integrated PIN diode, which takes advantage of the inherent three-photon absorption process in silicon.

  16. Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators

    NARCIS (Netherlands)

    Faber, E.J.; Smet, de L.C.P.M.; Olthuis, W.; Zuilhof, H.; Sudhölter, E.J.R.; Bergveld, P.; Berg, van den A.

    2005-01-01

    Herein, the influence of silicon surface modification via SiCnH2n+1 (n=10,12,16,22) monolayer-based devices on p-type 100 and n-type 100 silicon is studied by forming MIS (metal-insulator-semiconductor) diodes using a mercury probe. From current density-voltage (J-V) and capacitance-voltage (C-V) me

  17. Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators

    NARCIS (Netherlands)

    Faber, E.J.; Smet, de L.C.P.M.; Olthuis, W.; Zuilhof, H.; Sudhölter, E.J.R.; Bergveld, P.; Berg, van den A.

    2005-01-01

    Herein, the influence of silicon surface modification via SiCnH2n+1 (n=10,12,16,22) monolayer-based devices on p-type 100 and n-type 100 silicon is studied by forming MIS (metal-insulator-semiconductor) diodes using a mercury probe. From current density-voltage (J-V) and capacitance-voltage (C-V)

  18. Infrared electroabsorption spectra in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lyou, J.H.; Schiff, E.A.; Hegedus, S.S.; Guha, S.; Yang, J.

    1999-07-01

    The authors report measurements of the infrared spectrum detected by modulating the reverse-bias voltage across amorphous silicon pin solar cells and Schottky barrier diodes. They find a band with a peak energy of 0.8 eV. The existence of this band has not, to their knowledge, been reported previously. The strength of the infrared band depends linearly upon applied bias, as opposed to the quadratic dependence for interband electroabsorption in amorphous silicon. The band's peak energy agrees fairly well with the known optical transition energies for dangling bond defects, but the linear dependence on bias and the magnitude of the signal are surprising if interpreted using an analogy to interband electroabsorption. A model based on absorption by defects near the n/i interface of the diodes accounts well for the infrared spectrum.

  19. Silicon Heat Pipe Array

    Science.gov (United States)

    Yee, Karl Y.; Ganapathi, Gani B.; Sunada, Eric T.; Bae, Youngsam; Miller, Jennifer R.; Beinsford, Daniel F.

    2013-01-01

    Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better

  20. Analysis of nanosecond breaking of a high-density current in SOS diodes

    Science.gov (United States)

    Grekhov, I. V.; Lyublinskii, A. G.; Smirnova, I. A.

    2015-11-01

    Effect of a sharp (nanosecond) breaking of the reverse current with a density on the order of 103-104 A/cm2 in a silicon diode upon switching from direct to reverse bias voltage (so-called silicon opening switch, or SOS effect) is widely used in nanosecond technologies of gigawatt powers. For detailed analysis of the SOS effect, we constructed a special setup with small stray inductance, which makes it possible to test single SOS diodes with a working area of 1-2 mm2 in a wide range of current densities. Our experiments show, in particular, that the numerical model of the SOS effect developed at the Institute of Electrophysics, Ural Branch, Russian Academy of Sciences successfully described the experimental results. It is also shown that the charge extracted from the diode structure by the reverse current exceeds the charge introduced by a direct current pulse by not more than 10%, indicating a relatively small role of ionization processes. The possibility to carry out experiments on single samples with a small surface area allows us to study the SOS effect and considerably facilitates investigations aimed at the perfection of the design of SOS diodes.

  1. [Endonasal and endocanalicular dacryocystorhinostomy by diode laser. Preliminary results].

    Science.gov (United States)

    Alañón Fernández, M A; Alañón Fernández, F J; Martínez Fernández, A; Cárdenas Lara, M; Rodríguez Domínguez, R; Ballesteros Navarro, J M; Sainz Quevedo, M

    2004-04-01

    To describe the surgical technique and to evaluate the clinical results after having performed the transcanalicular and endocanalicular dacryocystorhinostomies by diode laser, including the advantages and limits of this technique. 34 were performed by diode laser in patients with clinical history of epiphora, with or without mucopurulent secretion, for nasolacrimal duct obstruction. The study was prospective, interventional, non randomized and non comparative. Diode laser was used to realize vaporization of lacrimal sac, osteotomy and vaporization with coagulation of nasal mucosa. The mean of surgical time was 15 minutes (range 7 to 29 minutes). Bicanalicular intubation was performed with a silicone tube and prolene filament for two months in all cases. Postsurgical follow-up was between 4 and 11 months. The degree of epiphora was evaluated by the Munk scale and lacrimal permeability was evaluated by endoscopic functional staining test in all cases. Out of the 34 DCR-EDN+ENC that were performed, 32 cases (94.11%) remain asymptomatic. Two of them (5.88%) required endonasal dacryocystorhinostomies by drilling, because the bony perforation was impossible to achieve by laser fiber. Two cases (5.88%) presented fibrosis and lacrimal and lower canaliculi obstruction, without epiphora because the superior canaliculi was permeable. Endonasal and endocanalicular dacryocystorhinostomy technique performed by diode laser is a valid method. It does not cause cutaneous scarring, it decreases thermic canalicular damage, it respects the lacrimal pump, it minimizes pain and bleeding, it needs less surgical time and it has turned into an out-patient procedure with a minimal surgical and postsurgical morbility.

  2. Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2012-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  3. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science ISS Investigation

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  4. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  5. Schottky Contact of Gallium on p-Type Silicon

    Directory of Open Access Journals (Sweden)

    B.P. Modi

    2011-01-01

    Full Text Available The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium – silicon Schottky diode has been fabricated and analyzed.

  6. Impact of SWCNT processing on nanotube-silicon heterojunctions

    Science.gov (United States)

    Harris, John M.; Headrick, Robert J.; Semler, Matthew R.; Fagan, Jeffrey A.; Pasquali, Matteo; Hobbie, Erik K.

    2016-04-01

    Single-wall carbon nanotube (SWCNT) films are ideal components for thin, flexible, and durable electronic devices. Here, we use a variety of processing approaches to fabricate SWCNT-silicon heterojunctions from both unsorted and chirality-enriched SWCNTs. Through measured structure/processing/property relationships, we quantify the influence of SWCNT purity, alignment and residual doping on device performance and diode characteristics. Our results show that mixed-type unaligned SWCNTs processed in super-acid solvents can achieve state-of-the-art performance. The devices perform comparably to those fabricated from type or chiral-purified SWCNTs, despite what appear to be significant deviations from ideal diode behavior. Our results clarify a direct route for processing nanotube-silicon heterojunctions while providing additional insight into the underlying nature of these devices.Single-wall carbon nanotube (SWCNT) films are ideal components for thin, flexible, and durable electronic devices. Here, we use a variety of processing approaches to fabricate SWCNT-silicon heterojunctions from both unsorted and chirality-enriched SWCNTs. Through measured structure/processing/property relationships, we quantify the influence of SWCNT purity, alignment and residual doping on device performance and diode characteristics. Our results show that mixed-type unaligned SWCNTs processed in super-acid solvents can achieve state-of-the-art performance. The devices perform comparably to those fabricated from type or chiral-purified SWCNTs, despite what appear to be significant deviations from ideal diode behavior. Our results clarify a direct route for processing nanotube-silicon heterojunctions while providing additional insight into the underlying nature of these devices. Electronic supplementary information (ESI) available: Details related to SWCNT purification, device fabrication and assembly, CSA doping and film anisotropy. See DOI: 10.1039/c5nr08703a

  7. The economic payoff for a state-of-the-art high-efficiency flat-plate crystalline silicon solar cell technology

    Science.gov (United States)

    Bickler, Donald B.; Callaghan, W. T.

    In 1986 during the flat-plate solar array project, silicon solar cells 4.0 sq cm in area were fabricated at the Jet Propulsion Laboratory (JPL) with a conversion efficiency of 20.1 percent (AM1.5-global). Sixteen cells were processed with efficiencies measuring 19.5 percent (AM1.5 global) or better. These cells were produced using refined versions of conventional processing methods, aside from certain advanced techniques that bring about a significant reduction in a major mechanism (surface recombination) that limits cell efficiency. Wacker Siltronic p-type float-zone 0.18-ohm-cm wafers were used. Conversion efficiencies in this range have previously been reported by other researchers, but generally on much smaller (0.5 vs. 4.0 cm) devices which have undergone sophisticated and costly processing steps. An economic analysis is presented of the potential payoffs for this approach, using the Solar Array Manufacturing Industry Costing Standards (SAMICS) methodology. The process sequence used and the assumptions made for capturing the economies of scale are presented.

  8. Few-photon optical diode

    CERN Document Server

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficiently than the opposite.

  9. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  10. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  11. Scaling of nano-Schottky-diodes

    NARCIS (Netherlands)

    Smit, G.D.J.; Rogge, S.; Klapwijk, T.M.

    2002-01-01

    A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes th

  12. Nano- and micro-structured silicon for hybrid near-infrared photodetectors

    Science.gov (United States)

    Äńerek, V.; Głowacki, E. D.; Bednorz, M.; Demchyshyn, S.; Sariciftci, N. S.; Ivanda, M.

    2016-05-01

    Structuring surface and bulk of crystalline silicon on different length scales can significantly alter its properties and possibly improve the performance of opto-electronic devices and sensors based on silicon. Different dominant feature scales are responsible for modification of some of electronic and optical properties of silicon. Several easily reproducible chemical methods for facile structuring of silicon on nano and micro-scales, based on both electroless and anodic etching of silicon in hydrofluoric acid based etchants, and chemical anisotropic etching of silicon in basic environments, are presented. We show how successive micro and nano structuring creates hierarchical silicon surfaces, which can be used to simultaneously exploit the advantages of both structuring feature length scales. Finally, we demonstrate a large increase in photocurrent obtained from a hybrid structured silicon/organic near-infrared photodetector. Improved silicon/6,6'-dibromoindigo hybrid photodiodes were prepared by nano- and micro-structuring the silicon part of the heterojunction by wet chemical etching methods. Photocurrent and spectral responsivity were improved in comparison to planar diodes by up to two orders of magnitude by optimization of the silicon structuring process. We show that the improvement in photocurrent is not due to the increase in surface area or light trapping.

  13. The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

    Energy Technology Data Exchange (ETDEWEB)

    Özaydın, C. [Batman University, Engineering Faculty, Department of Computer Eng., Batman (Turkey); Güllü, Ö., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Pakma, O. [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Ilhan, S. [Siirt University, Science and Art Faculty, Department of Chemistry, Siirt (Turkey); Akkılıç, K. [Dicle University, Education Faculty, Department of Physics Education, Diyarbakır (Turkey)

    2016-05-15

    Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

  14. Dopant concentration dependence of the response of SiC Schottky diodes to light ions

    Energy Technology Data Exchange (ETDEWEB)

    De Napoli, M. [Dipartimento di Fisica e Astronomia, Universita degli Studi di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Laboratori Nazionali del Sud, Via S. Sofia 62, I-95123 Catania (Italy); Giacoppo, F. [Laboratori Nazionali del Sud, Via S. Sofia 62, I-95123 Catania (Italy); Dipartimento di Fisica, Universita degli Studi di Messina, Via Salita Sperone 31, I-98166 Messina (Italy); Raciti, G. [Dipartimento di Fisica e Astronomia, Universita degli Studi di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Isituto Nazionale di Fisica Nucleare, Sezione di Catania, Via S. Sofia 64, I-95123 Catania (Italy)], E-mail: raciti@lns.infn.it; Rapisarda, E. [Dipartimento di Fisica e Astronomia, Universita degli Studi di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Isituto Nazionale di Fisica Nucleare, Sezione di Catania, Via S. Sofia 64, I-95123 Catania (Italy)

    2009-03-11

    The responses of Silicon Carbide (SiC) Schottky diodes of different dopant concentration to {sup 12}C ions at 14.2, 28.1 and 37.6 MeV incident energies are compared. The relation between the applied reverse bias and the thickness of the depleted epitaxial region is studied for different dopant concentrations. The experimental data show that SiC diodes with lower dopant concentration need lower reverse bias to be depleted. Moreover it has been observed that the energy resolution, measured as a function of the applied reverse bias and of the ions incident energies, does not depend on the dopant concentration. The radiation damage, produced by irradiating SiC diodes of different dopant concentration with {sup 16}O ions at 35.2 MeV, was evaluated by measuring the degradation of both the signal pulse-height and the energy resolution as a function of the {sup 16}O fluence. Diodes having a factor 20 lower dopant concentration exhibit a radiation hardness reduced by 60%. No inversion in the signal at the breakdown fluence was observed for {sup 16}O ions stopped inside the diode epitaxial region.

  15. Prospects of efficient band-to-band emission in silicon LEDs

    NARCIS (Netherlands)

    Schmitz, Jurriaan

    2017-01-01

    In this paper a review is presented of light emission from forward-biased silicon diodes. After a treatment of the carrier recombination physics governing in this indirect-bandgap material, the article describes important works in this field. Then, routes are proposed for further improvement of the

  16. On the intrinsic moisture permeation rate of remote microwave plasma-deposited silicon nitride layers

    NARCIS (Netherlands)

    Assche, F.J.H. Van; Unnikrishnan, S.; Michels, J.J.; Mol, A.M.B. van; Weijer, P. van de; Sanden, M.C.M. van de; Creatore, M.

    2014-01-01

    We report on a low substrate temperature (110°C) remote microwave plasma-enhanced chemical vapor deposition (PECVD) process of silicon nitride barrier layers against moisture permeation for organic light emitting diodes (OLEDs) and other moisture sensitive devices such as organic photovoltaic cells

  17. Ultranarrow-linewidth lasers on a silicon chip and their applications

    NARCIS (Netherlands)

    Pollnau, Markus

    We demonstrate diode-pumped distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) channel waveguide lasers in Al2O3:Er3+ and Al2O3:Yb3+ on silicon substrates. Uniform surface-relief Bragg gratings are patterned by laser-interference lithography and etched into the SiO2 top cladding,

  18. Ultranarrow-linewidth lasers on a silicon chip and their applications

    NARCIS (Netherlands)

    Pollnau, Markus

    2014-01-01

    We demonstrate diode-pumped distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) channel waveguide lasers in Al2O3:Er3+ and Al2O3:Yb3+ on silicon substrates. Uniform surface-relief Bragg gratings are patterned by laser-interference lithography and etched into the SiO2 top cladding, provi

  19. Crossed-beam superluminescent diode.

    Science.gov (United States)

    Vaissié, Laurent; Smolski, Oleg V; Johnson, Eric G

    2005-07-01

    We investigate a novel surface-emitting superluminescent diode configuration that uses two detuned grating outcouplers to suppress lasing. This device exhibits a shaped beam with a peak power of 1.5 W quasi-continuous wave with an 11 nm bandwidth centered on 970 nm.

  20. Thermal-Diode Sandwich Panel

    Science.gov (United States)

    Basiulis, A.

    1986-01-01

    Thermal diode sandwich panel transfers heat in one direction, but when heat load reversed, switches off and acts as thermal insulator. Proposed to control temperature in spacecraft and in supersonic missiles to protect internal electronics. In combination with conventional heat pipes, used in solar panels and other heat-sensitive systems.

  1. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.;

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  2. Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Science.gov (United States)

    Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M; Yu, Edward T; Lee, Jack C

    2014-02-12

    We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

  3. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  4. Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

    2016-08-23

    Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

  5. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  6. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  7. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    2001-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  8. Application of scanning Kelvin probe microscopy for the electrical characterization of microcrystalline silicon for photovoltaics

    CERN Document Server

    Breymesser, A

    2000-01-01

    constructed and built. Great effort was concentrated on the characterization of the SKPM experiment. On the basis of an extended knowledge about the performance investigations concentrated on cross sections of microcrystalline silicon diode structures produced by hot-wire chemical vapor deposition (HW-CVD). A pin structure for the diodes was chosen due to the low diffusion lengths within this rather defective material. The evolution of the built-in electric drift field within the intrinsic absorber is a prerequisite for obtaining high short circuit current densities. SKPM was able to provide information about the potential and electric field distribution within the cross-sectioned diode structures. In conjunction with simulations statements about actual defect and dopant distributions could be derived. Several diode structures with different deposition and compensation conditions of the naturally n-type intrinsic layer were investigated. In order to explore the character of the defects deep level transient sp...

  9. Optical Isolation Can Occur in Linear and Passive Silicon Photonic Structures

    CERN Document Server

    Wang, Chen

    2012-01-01

    On-chip optical isolators play a key role in optical communications and computing based on silicon integrated photonic structures. Recently there have raised great attentions and hot controversies upon isolation of light via linear and passive photonic structures. Here we analyze the optical isolation properties of a silicon photonic crystal slab heterojunction diode by comparing the forward transmissivity and round-trip reflectivity of in-plane infrared light across the structure. The round-trip reflectivity is much smaller than the forward transmissivity, justifying good isolation. The considerable effective nonreciprocal transport of in-plane signal light in the linear and passive silicon optical diode is attributed to the information dissipation and selective modal conversion in the multiple-channel structure and has no conflict with reciprocal principle.

  10. Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hassen, M. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, PB 95 2050 Hammam-Lif (Tunisia); Ben Jaballah, A. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, PB 95 2050 Hammam-Lif (Tunisia)]. E-mail: gadour2003@yahoo.fr; Hajji, M. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, PB 95 2050 Hammam-Lif (Tunisia); Rahmouni, H. [Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculte des Sciences de Monastir, Rue de Kairouan, 5000 Monastir (Tunisia); Selmi, A. [Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculte des Sciences de Monastir, Rue de Kairouan, 5000 Monastir (Tunisia); Ezzaouia, H. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Semiconducteurs, PB 95 2050 Hammam-Lif (Tunisia)

    2005-12-05

    In this work, porous silicon damage (PSD) is presented as a simple sequence for efficient external purification techniques. The method consists of using thin nanoporous p-type silicon on both sides of the silicon substrates with randomly hemispherical voids. Then, two main sample types are processed. In the first type, thin aluminium layers ({>=}1 {mu}m) are thermally evaporated followed by photo-thermal annealing treatments in N{sub 2} atmosphere at one of several temperatures ranging between 600 and 800 deg. C. In the second type, phosphorus is continually diffused in N{sub 2}/O{sub 2} ambient in a solid phase from POCl{sub 3} solution during heating at one of several temperatures ranging between 750 and 1000 deg. C for 1 h. Hall Effect and Van Der Pauw methods prove the existence of an optimum temperature in the case of phosphorus gettering at 900 deg. C yielding a Hall mobility of about 982 cm{sup 2} V{sup -1} s{sup -1}. However, in the case of aluminium gettering, there is no gettering limit in the as mentioned temperature range. Metal/Si Schottky diodes are elaborated to clarify these improvements. In this study, we demonstrate that enhanced metal solubility model cannot explain the gettering effect. The solid solubility of aluminium is higher than that of P atoms in silicon; however, the device yield confirms the effectiveness of phosphorus as compared to aluminium.

  11. Light-trapping design for thin-film silicon-perovskite tandem solar cells

    Science.gov (United States)

    Foster, Stephen; John, Sajeev

    2016-09-01

    Using finite-difference time-domain simulations, we investigate the optical properties of tandem silicon/perovskite solar cells with a photonic crystal architecture, consisting of a square-lattice array of inverted pyramids with a center-to-center spacing of 2.5 μm. We demonstrate that near-perfect light-trapping and absorption can be achieved over the 300-1100 nm wavelength range with this architecture, using less than 10 μm (equivalent bulk thickness) of crystalline silicon. Using a one-diode model, we obtain projected efficiencies of over 30% for the two-terminal tandem cell under a current-matching condition, well beyond the current record for single-junction silicon solar cells. The architecture is amenable to mass fabrication through wet-etching and uses a fraction of the silicon of traditional designs, making it an attractive alternative to other silicon-perovskite tandem designs.

  12. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    Directory of Open Access Journals (Sweden)

    Jotinder Kaur

    2016-05-01

    Full Text Available Barium Hexaferrite (BaM is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm/silicon substrate was used to grow the BaM thin films (100-150 nm using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc voltage much larger.

  13. Small field diode correction factors derived using an air core fibre optic scintillation dosimeter and EBT2 film.

    Science.gov (United States)

    Ralston, Anna; Liu, Paul; Warrener, Kirbie; McKenzie, David; Suchowerska, Natalka

    2012-05-07

    There is no commercially available real-time dosimeter that can accurately measure output factors for field sizes down to 4 mm without the use of correction factors. Silicon diode detectors are commonly used but are not dosimetrically water equivalent, resulting in energy dependence and fluence perturbation. In contrast, plastic scintillators are nearly dosimetrically water equivalent. A fibre optic dosimeter (FOD) with a 0.8 mm(3) plastic scintillator coupled to an air core light guide was used to measure the output factors for Novalis/BrainLab stereotactic cones of diameter 4-30 mm and Novalis MLC fields of width 5-100 mm. The FOD data matched the output factors measured by a 0.125 cm(3) Semiflex ion chamber for the MLC fields above 30 mm and those measured with the EBT2 radiochromic film for the cones and MLC fields below 30 mm. Relative detector readings were obtained with four diode types (IBA SFD, EFD, PFD, PTW 60012) for the same fields. Empirical diode correction factors were determined by taking the ratio of FOD output factors to diode relative detector readings. The diodes were found to over-respond by 3%-16% for the smallest field. There was good agreement between different diodes of the same model number.

  14. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    Science.gov (United States)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  15. ORGANIC LIGHT EMITTING DIODE (OLED

    Directory of Open Access Journals (Sweden)

    Aririguzo Marvis Ijeaku

    2015-09-01

    Full Text Available An Organic Light Emitting Diode (OLED is a device composed of an organic layer that emits lights in response to an electrical current. Organic light emitting diodes have advanced tremendously over the past decades. The different manufacturing processes of the OLED itself to several advantages over flat panel displays made with LCD technology which includes its light weight and flexible plastic substrates, wider viewing angles, improved brightness, better power efficiency and quicker response time. However, its drawbacks include shorter life span, poor color balance, poor outdoor performance, susceptibility to water damage etc.The application of OLEDs in electronics is on the increase on daily basics from cameras to cell phones to OLED televisions, etc. Although OLEDs provides prospects for thinner, smarter, lighter and ultraflexible electronics displays, however, due to high cost of manufacturing, it is not yet widely used.

  16. Quantum Noise in Laser Diodes

    Science.gov (United States)

    Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

    1996-01-01

    We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

  17. Megahertz organic/polymer diodes

    Science.gov (United States)

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  18. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  19. Chemical Analysis Methods for Silicon Carbide

    Institute of Scientific and Technical Information of China (English)

    Shen Keyin

    2006-01-01

    @@ 1 General and Scope This Standard specifies the determination method of silicon dioxide, free silicon, free carbon, total carbon, silicon carbide, ferric sesquioxide in silicon carbide abrasive material.

  20. Glass-silicon column

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  1. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  2. Comparative study of interfacial effects in photovoltaic diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tavakolian, H.

    1988-01-01

    Several different type of photodiodes (NASA standard n-p, p-on-n single crystal silicon, GaAs homojunction, ITO/p-Si, Au/n-GaAs Schottky diode and CdS/CuInSe{sub 2}) have been examined. Measurements of current vs. voltage as a function of temperature and light intensity, plus capacitance vs. voltage and frequency were an attempt to identify the causes on non-ideal behavior. An automatic, computer controlled system greatly enhanced the precision of measurements and the ability to separate non-ideal effects. No dispersion in capacitance with frequency was observed in single crystal homojunction diodes and Au/n-GaAs Schottky barrier, indicating near zero interfacial states for these devices. CdS/CuInSe{sub 2} cells from ARCO Solar, Boeing and IEC all showed interfacial states with a wide range of time constants and zero bias densities at the Fermi level in the junction of 10{sup 10} to 10{sup 11} states/cm{sup 2}-eV. In reverse bias, however, the density of states, decreased by an order of magnitude. Under illumination, this number increased with increasing light intensity and saturated near 100 mW/cm{sup 2}. The CdS/CuInSe{sub 2} solar cell was modeled as a heterojunction diode with charge at the junction interface. The low open-circuit voltage and the shift to lower voltage (about 125 mV) observed in some photodiodes is explained by this model.

  3. High Frequency Performance of GaN Based IMPATT Diodes

    Directory of Open Access Journals (Sweden)

    B. Chakrabarti

    2011-08-01

    Full Text Available IMPATT is a p+n junction diode reversed bias to breakdown and can generate microwave power when properly embedded in a resonant cavity. Till emergence on 1965 day by day it became more powerful solid state source for microwave as well as mm-wave frequency range. To get higher efficiency and power output different structures like SDR, DDR, DAR, lo-high-lo, etc. were proposed and developed by different scientists over the years. Then the IMPATT development started with different semiconductor materials like GaAs, InP, GaN, etc. along with Silicon to achieve higher efficiency, power output and frequency range. In this paper the performance of GaN based SDR IMPATT have thoroughly studied in terms of (i electric field profile[E(x] (iinormalized current density profile [P(x] (iii Susceptance Vs Conductance characteristics (ivRF power output (v negative resistivity profile [R(x] of the diodes through simulation scheme. It is being observed that the efficiency is 17.9% at Ka-band and because of the very high breakdown voltage, power output is as high as1.56W in comparison with other frequency band of operations.

  4. High power coherent polarization locked laser diode.

    Science.gov (United States)

    Purnawirman; Phua, P B

    2011-03-14

    We have coherently combined a broad area laser diode array to obtain high power single-lobed output by using coherent polarization locking. The single-lobed coherent beam is achieved by spatially combining four diode emitters using walk-off crystals and waveplates while their phases are passively locked via polarization discrimination. While our previous work focused on coherent polarization locking of diode in Gaussian beams, we demonstrate in this paper, the feasibility of the same polarization discrimination for locking multimode beams from broad area diode lasers. The resonator is designed to mitigate the loss from smile effect by using retro-reflection feedback in the cavity. In a 980 nm diode array, we produced 7.2 W coherent output with M2 of 1.5x11.5. The brightness of the diode is improved by more than an order of magnitude.

  5. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  6. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  7. Radiation hardness studies of epitaxial diodes for the PANDA micro-vertex-detector

    Energy Technology Data Exchange (ETDEWEB)

    Quagli, Tommaso; Brinkmann, Kai-Thomas; Schnell, Robert [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); Calvo, Daniela [INFN, Sezione di Torino, Torino (Italy); Collaboration: PANDA-Collaboration

    2014-07-01

    PANDA is a key experiment of the future FAIR facility, under construction in Darmstadt, Germany. It will study the collisions between an antiproton beam and a fixed proton or nuclear target. The Micro Vertex Detector (MVD) is its innermost detector and is composed of four concentric barrels and six forward disks, instrumented with silicon hybrid pixel and double-sided microstrip detectors. It serves the identification of primary and secondary vertices. The main requirements include high spatial and time resolution, trigger-less readout with high rate capability, good radiation tolerance and low material budget. In order to investigate the radiation hardness of the silicon pixel sensors, irradiation studies were performed on diodes using a proton beam at the Bonn Isochronous Cyclotron. The diodes featured an epitaxial layer grown on a Czochralski substrate; the thicknesses of the epitaxial layers were 100μ m and 150μ m, respectively. Additionally, some of the samples were treated with an oxygenation process. The study was performed with two different fluences, comparing the I-V and C-V curves of the non-irradiated diodes with the ones obtained immediately after the irradiation and after an annealing phase.

  8. Physics and Applications of Laser Diode Chaos

    CERN Document Server

    Sciamanna, Marc

    2015-01-01

    An overview of chaos in laser diodes is provided which surveys experimental achievements in the area and explains the theory behind the phenomenon. The fundamental physics underpinning this behaviour and also the opportunities for harnessing laser diode chaos for potential applications are discussed. The availability and ease of operation of laser diodes, in a wide range of configurations, make them a convenient test-bed for exploring basic aspects of nonlinear and chaotic dynamics. It also makes them attractive for practical tasks, such as chaos-based secure communications and random number generation. Avenues for future research and development of chaotic laser diodes are also identified.

  9. Effects of radiation on laser diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Phifer, Carol Celeste

    2004-09-01

    The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-dose-rate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.

  10. Advances in high power semiconductor diode lasers

    Science.gov (United States)

    Ma, Xiaoyu; Zhong, Li

    2008-03-01

    High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. The latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect, different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

  11. Dose-rate dependence of epitaxial diodes response for gamma dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Goncalves, J.A.C.; Santos, T.C. dos; Barbosa, R.F.; Pascoalino, K.C.S.; Bueno, C.C. [Instituto de Pesquisas Energeticas e Nucleares (CTR/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes

    2011-07-01

    Full text: In this work, we present the preliminary results about the evaluation of dose-rate influence on the response of rad-hard epitaxial (EPI) diodes for on-line gamma-ray dosimetry using Co-60 irradiators. The diodes used were processed at University of Hamburg on n-type 75 micrometer thick epitaxial silicon layer (nominal resistivity of 69 Ohm.cm) grown on a highly doped n-type 300 micrometer thick Czochralski (Cz) silicon substrate. Two samples of EPI diodes were investigated: EPI-08 and EPI-10 - both non-irradiated previously. These devices, with 5mm x 5mm active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 617 electrometer. The EPI-10 device irradiation was performed in the Radiation Technology Center at IPEN-CNEN/SP using a Co-60 irradiator (Gammacell 220 - Nordion) which delivers a dose rate of 2.16 kGy/h, while the EPI-08 device irradiation was performed in Nuclear Energy Department at UFPE/PE using the same model Co-60 irradiator, but with a dose-rate of 7.47 kGy/h. During the irradiation, the devices photocurrents were monitored as a function of the exposure time. The diodes were irradiated at room temperature. The dose-response curves of the EPI diodes were achieved through the integration of the current signals as a function of the exposure time. The normalized current signals as a function of the dose evidenced a decrease of about 60 percent from the initial current for the first 100 kGy dose received. After 500 kGy of exposure, the current signals stabilize (ou maintain stable). The dose-response curves behave as a second order polynomial fit, with correlation coefficients of about 0.99991 and 0.99995, respectively to EPI-10 and EPI-08 diodes. The preliminary results obtained evinced that the EPI diodes response are not dose-rate dependent within the range of 2.16 kGy/h up to 7.47 kGy/h. On the other hand, the devices studied are tolerant to radiation damages for total absorbed doses of approximately 550

  12. Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

    Science.gov (United States)

    Alyamani, A.; Tataroğlu, A.; El Mir, L.; Al-Ghamdi, Ahmed A.; Dahman, H.; Farooq, W. A.; Yakuphanoğlu, F.

    2016-04-01

    The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.

  13. Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation

    Science.gov (United States)

    Remnev, G. E.; Ivanov, Yu. F.; Naiden, E. P.; Saltymakov, M. S.; Stepanov, A. V.; Shtan'ko, V. F.

    2009-04-01

    Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm2. Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12-16 and 8-9 nm, respectively.

  14. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  15. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

    Science.gov (United States)

    Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

  16. Silicon micro-mold

    Science.gov (United States)

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  17. Core-shell diode array for high performance particle detectors and imaging sensors: status of the development

    Science.gov (United States)

    Jia, G.; Hübner, U.; Dellith, J.; Dellith, A.; Stolz, R.; Plentz, J.; Andrä, G.

    2017-02-01

    We propose a novel high performance radiation detector and imaging sensor by a ground-breaking core-shell diode array design. This novel core-shell diode array are expected to have superior performance respect to ultrahigh radiation hardness, high sensitivity, low power consumption, fast signal response and high spatial resolution simultaneously. These properties are highly desired in fundamental research such as high energy physics (HEP) at CERN, astronomy and future x-ray based protein crystallography at x-ray free electron laser (XFEL) etc.. This kind of detectors will provide solutions for these fundamental research fields currently limited by instrumentations. In this work, we report our progress on the development of core-shell diode array for the applications as high performance imaging sensors and particle detectors. We mainly present our results in the preparation of high aspect ratio regular silicon rods by metal assisted wet chemical etching technique. Nearly 200 μm deep and 2 μm width channels with high aspect ratio have been etched into silicon. This result will open many applications not only for the core-shell diode array, but also for a high density integration of 3D microelectronics devices.

  18. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  19. Silicon Carbide Shapes.

    Science.gov (United States)

    Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a...reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide , the...graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

  20. Novel Silicon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape ofnanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.

  1. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  2. Materials for diode pumped solid state lasers

    Science.gov (United States)

    Chase, L. L.; Davis, L. E.; Krupke, W. F.; Payne, S. A.

    1991-07-01

    The advantages of semiconductor diode lasers and laser arrays as pump sources for solid state lasers are reviewed. The properties that are desirable in solid state laser media for various diode pumping applications are discussed, and the characteristics of several promising media are summarized.

  3. Temperature dependence of commercially available diode detectors.

    Science.gov (United States)

    Saini, Amarjit S; Zhu, Timothy C

    2002-04-01

    Temperature dependence of commercially available n- and p-type diodes were studied experimentally under both high instantaneous dose rate (pulsed) and low dose rate (continuous) radiation. The sensitivity versus temperature was measured at SSD = 80 or 100 cm, 10 x 10 cm2, and 5 cm depth in a 30 x 30 x 30 cm3 water phantom between 10 degrees C and 35 degrees C. The response was linear for all the diode detectors. The temperature coefficient (or sensitivity variation with temperature, svwt) was dose rate independent for preirradiated diodes. They were (0.30 +/- 0.01)%/degrees C, (0.36 +/- 0.03)%/degrees C, and (0.29 +/- 0.08)%/degrees C for QED p-type, EDP p-type, and Isorad n-type diodes, respectively. The temperature coefficient for unirradiated n-type diodes was different under low dose rate [(0.16 to 0.45)%/degrees C, continuous, cobalt] and high instantaneous dose rate [(0.07 +/- 0.02)%/degrees C, pulsed radiation]. Moreover, the temperature coefficient varies among individual diodes. Similarly, the temperature coefficient for a special unirradiated QED p-type diode was different under low dose rate (0.34%/degrees C, cobalt) and high instantaneous dose rate [(0.26 +/- 0.01)%/degrees C, pulsed radiation]. Sufficient preirradiation can eliminate dose rate dependence of the temperature coefficient. On the contrary, preirradiation cannot eliminate dose rate dependence of the diode sensitivity itself.

  4. Disinfection of Pseudomonas aeruginosa biofilm contaminated tube lumens with ultraviolet C light emitting diodes

    DEFF Research Database (Denmark)

    Bak, Jimmy; Ladefoged, S.D.; Tvede, M.

    2010-01-01

    , however, be applied to obtain 99.9% disinfection rates. The major reason was that besides cells the mature biofilm contained absorbing and scattering particulates, which made the biofilm opaque. The potential of UVC light emitting diodes ( LED) for disinfection purposes in catheter-like tubes contaminated...... with biofilm was investigated. It was shown that UVC light propagation was possible through both Teflon and catheter tubes ( silicone). The disinfection efficiency of the diodes was demonstrated on tubes contaminated artificially with a Pseudomonas aeruginosa biofilm. The tubes were connected to a flow system...... in the range of 5 x 10(5)-1.3 x 10(9) CFU ml(-1), with disinfection rates in the range 96-100%. The applied UVC doses corresponded to treatment times between 15 and 300 min. Disinfection (100%) was obtained in 10 cm Teflon tubes exposed for 30 min (detection limit...

  5. Disinfection of Pseudomonas aeruginosa biofilm contaminated tube lumens with ultraviolet C light emitting diodes

    DEFF Research Database (Denmark)

    Bak, Jimmy; Ladefoged, Søren D; Tvede, Michael

    2010-01-01

    , however, be applied to obtain 99.9% disinfection rates. The major reason was that besides cells the mature biofilm contained absorbing and scattering particulates, which made the biofilm opaque. The potential of UVC light emitting diodes (LED) for disinfection purposes in catheter-like tubes contaminated...... with biofilm was investigated. It was shown that UVC light propagation was possible through both Teflon and catheter tubes (silicone). The disinfection efficiency of the diodes was demonstrated on tubes contaminated artificially with a Pseudomonas aeruginosa biofilm. The tubes were connected to a flow system...... in the range of 5 x 10(5)-1.3 x 10(9) CFU ml(-1), with disinfection rates in the range 96-100%. The applied UVC doses corresponded to treatment times between 15 and 300 min. Disinfection (100%) was obtained in 10 cm Teflon tubes exposed for 30 min (detection limit...

  6. High passive-stability diode-laser design for use in atomic-physics experiments

    CERN Document Server

    Cook, Eryn C; Brown-Heft, Tobias L; Garman, Jeffrey C; Steck, Daniel A

    2012-01-01

    We present the design and performance characterization of an external cavity diode-laser system optimized for high stability, low passive spectral linewidth, low cost, and ease of in-house assembly. The main cavity body is machined from a single aluminum block for robustness to temperature changes and mechanical vibrations, and features a stiff and light diffraction-grating arm to suppress low-frequency mechanical resonances. The cavity is vacuum-sealed, and a custom-molded silicone external housing further isolates the system from acoustic noise and temperature fluctuations. Beam shaping, optical isolation, and fiber coupling are integrated, and the design is easily adapted to many commonly used wavelengths. Resonance data, passive-linewidth data, and passive stability characterization of the new design demonstrate that its performance exceeds published specifications for commercial precision diode-laser systems. The design is fully documented and freely available.

  7. n{sup +}/p diodes by ion implantation: Dopant, extended defects, and impurity concerns

    Energy Technology Data Exchange (ETDEWEB)

    Xu, M.; Venables, D.; Christensen, K.N.; Maher, D.M. [North Carolina State Univ., Raleigh, NC (United States)

    1995-08-01

    The present study is concerned with the formation of defect structures resulting from phosphorus ion implantation into p-type, <100> silicon and with the rearrangement as well as removal of defect structures following high temperature annealing. The problematic interaction of background impurities with extended defects also is included in this study, as are the non-illuminated and illuminated electrical characteristics of n+/p diodes that are fabricated using ion implantation. Wafers and diodes that are fabricated using a phosphorus planar diffusion technique are run in parallel and serve as the controls. In this contribution, preliminary results for the cases of a 50 keV implant followed by an anneal at 900{degrees}C/30 min and a diffusion at 825{degrees}C/60 min are summarized.

  8. Analytical model for thin-film SOI PIN-diode leakage current

    Science.gov (United States)

    Schmidt, Andrei; Dreiner, Stefan; Vogt, Holger; Goehlich, Andreas; Paschen, Uwe

    2017-04-01

    An analytical model for the thin-film silicon-on-insulator pin-diode leakage current is presented. Particularly the back-gate potential influence on the leakage current is addressed. The two-dimensional Poisson equation is simplified and then solved including the influence of the back-gate potential. Subsequently the analytical model is verified by comparison with numerical simulation and measurements. For the verification of the model the dependence on the back-gate potential, reverse voltage, device geometry, doping concentration and -polarity is considered. In this procedure the interface recombination velocity is used as fitting parameter. The model verification shows an accurate modeling of the leakage current at full depletion in combination with a back-gate potential dependence. The usage of the model is limited to back-gate and reverse potentials close to full depletion state of the pin-diode.

  9. MCz diode response as a high-dose gamma radiation dosimeter

    Energy Technology Data Exchange (ETDEWEB)

    Camargo, F. [Instituto de Pesquisas Energeticas e Nucleares-IPEN-CNEN/SP, Caixa Postal 11049 - 05422 970 Sao Paulo/SP (Brazil); Goncalves, J.A.C. [Instituto de Pesquisas Energeticas e Nucleares-IPEN-CNEN/SP, Caixa Postal 11049 - 05422 970 Sao Paulo/SP (Brazil); Depto. de Fisica, Pontificia Universidade Catolica de Sao Paulo-PUC/SP, Rua Marques de Paranagua no 111-01303 050 Sao Paulo/SP (Brazil); Khoury, H.J. [Nuclear Energy Department, Universidade Federal de Pernambuco-UFPE, Av. Prof. Luiz Freire no 1000-50740 540 Recife/PE (Brazil); Napolitano, C.M. [Instituto de Pesquisas Energeticas e Nucleares-IPEN-CNEN/SP, Caixa Postal 11049 - 05422 970 Sao Paulo/SP (Brazil); Haerkoenen, J. [Helsinki Institute of Physics-HIP, University of Helsinki, 00014 Helsinki (Finland); Bueno, C.C. [Instituto de Pesquisas Energeticas e Nucleares-IPEN-CNEN/SP, Caixa Postal 11049 - 05422 970 Sao Paulo/SP (Brazil); Depto. de Fisica, Pontificia Universidade Catolica de Sao Paulo-PUC/SP, Rua Marques de Paranagua no 111-01303 050 Sao Paulo/SP (Brazil)], E-mail: ccbueno@ipen.br

    2008-02-15

    This work presents the preliminary results obtained with a high-resistivity magnetic Czochralski (MCz) silicon diode processed at the Helsinki Institute of Physics as a high-dose gamma dosimeter in radiation processing. The irradiation was performed using a {sup 60}Co source (Gammacell 220, MDS Nordion) within total doses from 100 Gy up to 3 kGy at a dose rate of 3 kGy/h. In this interval, the dosimetric response of the diode is linear with a correlation coefficient (r{sup 2}) higher than 0.993. However, without any irradiation procedure, the device showed a small sensitivity dependence on the accumulated dose. For total dose of 3 kGy, the observed decrease was about 2%. To clarify the origin of this possible radiation damage effect, some studies are under way.

  10. Disinfection of Pseudomonas aeruginosa biofilm contaminated tube lumens with ultraviolet C light emitting diodes

    DEFF Research Database (Denmark)

    Bak, Jimmy; Ladefoged, Søren D; Tvede, Michael

    2010-01-01

    Bacterial biofilms on long-term catheters are a major source of infection. Exposure to ultraviolet C (UVC - 265 nm) light was shown in an earlier study to reduce the number of bacteria substantially on ex vivo treated urinary patient catheters. Very large doses (long treatment times) should......, however, be applied to obtain 99.9% disinfection rates. The major reason was that besides cells the mature biofilm contained absorbing and scattering particulates, which made the biofilm opaque. The potential of UVC light emitting diodes (LED) for disinfection purposes in catheter-like tubes contaminated...... with biofilm was investigated. It was shown that UVC light propagation was possible through both Teflon and catheter tubes (silicone). The disinfection efficiency of the diodes was demonstrated on tubes contaminated artificially with a Pseudomonas aeruginosa biofilm. The tubes were connected to a flow system...

  11. Breast Implants: Saline vs. Silicone

    Science.gov (United States)

    ... differ in material and consistency, however. Saline breast implants Saline implants are filled with sterile salt water. ... of any age for breast reconstruction. Silicone breast implants Silicone implants are pre-filled with silicone gel — ...

  12. Electromagnetic wave analogue of electronic diode

    CERN Document Server

    Shadrivov, Ilya V; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinary strong nonlinear wave propagation effect in the same way as electronic diode function is provided by a nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differing by a factor of 65.

  13. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  14. Neutron transmutation doped silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.; Krejner, Kh.; Ito, D.; Khusimi, K.; Okava, S.; Sirejsi, F.

    1984-01-01

    A method of doping neutron transmutation during (NTD) of Si crystals is described. Characteristics of detectors made of crystals obtained by the NTD method at low and room temperatures are measured. The possibility is studied of using the NTD method to produce Si crystals with a longer lifetime of non-base charge carriers, high specific resistance and more even distribution of specific resistance over the detector radius. The NTD method is based on /sup 30/Si isotope transmutation into /sup 31/Si following the (n, ..gamma..)-reaction. The /sup 31/Si isotope is unstable and transforms to /sup 31/P while emitting ..beta../sup -/. The NTD method consists in introduction of purified gaseous monosilan SiH/sub 4/ into the furnace to undergo thermal decomposition at 860 deg C with the formation of polycrystalline n-type Si. The polycrystalline Si prepared is treated mechanically and, after purification by the method of a ''floating zone'' in vacuum and in argon irradiated by a thermal neutron flux with the a density of 5x10/sup 11/ neUtr/(cm/sup 2/ x s) for 30-75 min. An analysis of the data obtained shows that the specifications of the Si detectors prepared by the NTD method are the same as those of conventional Si-detectors widely used nowadays but their cost of production is considerably lower.

  15. Silicon carbide, a semiconductor for space power electronics

    Science.gov (United States)

    Powell, J. A.; Matus, Lawrence G.

    1991-01-01

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  16. TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

    Science.gov (United States)

    Das, Achintya; Duttagupta, Siddhartha P

    2015-12-01

    There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  17. A contribution to the identification of the E5 defect level as tri-vacancy (V{sub 3})

    Energy Technology Data Exchange (ETDEWEB)

    Junkes, Alexandra, E-mail: alexandra.junkes@desy.de [Institute for Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); Pintilie, Ioana [Institute for Experimental Physics, University of Hamburg, 22761 Hamburg (Germany); NIMP Bucharest-Margurele (Romania); Fretwurst, Eckhart; Eckstein, Doris [Institute for Experimental Physics, University of Hamburg, 22761 Hamburg (Germany)

    2012-08-01

    Silicon particle detectors in tracking devices for the high luminosity Large Hadron Collider will suffer from an extremely intense radiation field of mainly hadronic particles. The main radiation induced deep defect centres in silicon, responsible for the increase of the dark current and corresponding noise, are the cluster related defect levels E5 and E205a. This work confirms the identification of the E5 level as tri-vacancy (V{sub 3}). This defect transforms into the tri-vacancy-oxygen complex (V{sub 3}O) at temperatures above 200 Degree-Sign C. The defect concentrations were obtained by means of Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current technique (TSC) performed on float zone (FZ), epitaxially grown (Epi) and Magnetic Czochralski (MCz) silicon diodes, irradiated with 1 MeV neutrons and 23 GeV protons.

  18. Hermetic diode laser transmitter module

    Science.gov (United States)

    Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

    1999-04-01

    In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

  19. 硅基光源的研究进展%Research progress of silicon light source

    Institute of Scientific and Technical Information of China (English)

    沈浩; 李东升; 杨德仁

    2015-01-01

    To meet the requirements for high speed, low cost, and more information capacity, silicon photonics has been boom-ing in recent years. Silicon photonics covers a very wide field. For the silicon photonics, researchers have successfully achieved silicon-based optical waveguides, switches, modulators, and detectors. But the problem of silicon based light source has not been really resolved, which has become a primary bottleneck for further developing the silicon photonics. The momentum of a phonon is required to allow an electron to transit from the minimum of the conduction band to the maximum of the valence band in Si because of the indirect bandgap. This two-particle process with a low probability makes it difficult to achieve high-efficiency silicon-based light source by itself. However, much effort has been made to characterize and understand the light-emission phenomena of silicon-based devices. Also, more attempts were made to enhance the emission efficiency of silicon. Practical silicon lasers are very important for silicon photonics and have been a long goal for semiconductor scientists. A number of important break-throughs in the past decade have focused on silicon as a photonic platform thanks to the efforts of scientists. In this review, we introduce the recent progress of silicon-based luminescence materials, silicon light emitting diodes and silicon lasers. In the first part of this paper, common types of silicon-based light emitting materials, including porous silicon, silicon nanocrystals, rare earth-doped silicon, silicon defect emission, germanium on silicon and semiconducting silicides are comprehensively reviewed. Among them, the quantum effects and surface effects of low-dimensional silicon can greatly enhance the light emission efficiency. The erbium atoms in silicon-based rare earth materials can produce the light emission at communication wavelength band independently of the host. The transition from the lowest excited state to the 4f ground

  20. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  1. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  2. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  3. ALICE silicon strip module

    CERN Multimedia

    Maximilien Brice

    2006-01-01

    This small silicon detector strip will be inserted into the inner tracking system (ITS) on the ALICE detector at CERN. This detector relies on state-of-the-art particle tracking techniques. These double-sided silicon strip modules have been designed to be as lightweight and delicate as possible as the ITS will eventually contain five square metres of these devices.

  4. SILICON CARBIDE DATA SHEETS

    Science.gov (United States)

    These data sheets present a compilation of a wide range of electrical, optical and energy values for alpha and beta- silicon carbide in bulk and film...spectrum. Energy data include energy bands, energy gap and energy levels for variously-doped silicon carbide , as well as effective mass tables, work

  5. Silicon Valley Ecosystem

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ It is unlikely that any industrial region of the world has received as much scrutiny and study as Silicon Valley. Despite the recent crash of Internet and telecommunications stocks,Silicon Valley remains the world's engine of growth for numerous high-technology sectors.

  6. Characterization of a commercially available large area, high detection efficiency single-photon avalanche diode

    CERN Document Server

    Stipčević, Mario; Ursin, Rupert

    2013-01-01

    We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a significant interplay exists between dark counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes requiring a careful optimization tailored for a specific application. We find that a large flat plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm and timing precision down to 150 ps FWHM are the main distinguishing characteristics of this SPAD.

  7. The waffle: a new photovoltaic diode geometry having high efficiency and backside contacts

    DEFF Research Database (Denmark)

    Leistiko, Otto

    1994-01-01

    By employing anisotropic etching techniques and advanced device processing it is possible to micromachine new types of mechanical, electronic, and optical devices of silicon, which have unique properties. In this paper the characteristics of a new type of photovoltaic diode fabricated employing...... these processing techniques are described. This novel device has not only high efficiency, but also has both contacts placed on the backside of the cell. The first devices which are only 50 mm in diameter are of relatively good quality with low leakage currents (nA), high breakdown voltages (80 V), and low series...

  8. Energy-recycling pixel for active-matrix organic light-emitting diode display

    Science.gov (United States)

    Yang, Che-Yu; Cho, Ting-Yi; Chen, Yen-Yu; Yang, Chih-Jen; Meng, Chao-Yu; Yang, Chieh-Hung; Yang, Po-Chuan; Chang, Hsu-Yu; Hsueh, Chun-Yuan; Wu, Chung-Chih; Lee, Si-Chen

    2007-06-01

    The authors report a pixel structure for active-matrix organic light-emitting diode (OLED) displays that has a hydrogenated amorphous silicon solar cell inserted between the driving polycrystalline Si thin-film transistor and the pixel OLED. Such an active-matrix OLED pixel structure not only exhibits a reduced reflection (and thus improved contrast) compared to conventional OLEDs but also is capable of recycling both incident photon energies and internally generated OLED radiation. Such a feature of energy recycling may be of use for portable/mobile electronics, which are particularly power aware.

  9. Photoluminescence of Silicon Nanocrystals in Silicon Oxide

    Directory of Open Access Journals (Sweden)

    L. Ferraioli

    2007-01-01

    Full Text Available Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition. The influence of deposition parameters and layer thickness is analyzed in detail. The nanocrystal size can be roughly controlled by means of Si content and annealing temperature and time. Unfortunately, a technique for independently fine tuning the emission efficiency and the size is still lacking; thus, only middle size nanocrystals have high emission efficiency. Interestingly, the layer thickness affects the nucleation and growth kinetics so changing the luminescence efficiency.

  10. Steps towards silicon optoelectronics

    CERN Document Server

    Starovoytov, A

    1999-01-01

    nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material syst...

  11. Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

    Science.gov (United States)

    Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

    2014-12-01

    Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry.

  12. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  13. Charge collection efficiency of standard and oxygenated silicon microstrip detectors

    CERN Document Server

    Stavitski, I; Bisello, D; Bacchetta, N; Candelori, A; Kaminski, A; Wyss, J

    2002-01-01

    Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24 GeV protons to fluences ranging between 2.3 and 6.3 * 10/sup 14/ cm/sup -2/. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060 mu m wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors. (10 refs).

  14. Silicon (BSFR) solar cell AC parameters at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, R Anil; Suresh, M.S. [ISRO Satellite Center, Bangalore- 560 017 (India); Nagaraju, J. [Solar Energy and Thermodynamic Laboratory, Department of Instrumentation, Indian Institute of Science, Bangalore- 560 012 (India)

    2005-01-31

    The AC parameters of back surface field reflected (BSFR) silicon solar cell are measured at different cell temperatures (198-348K) both in forward and reverse bias under dark condition using impedance spectroscopy technique. It is found that cell capacitance increases with temperature whereas cell resistance decreases, in forward bias voltage. Beyond maximum power point voltage, the cell inductance (0.28{mu}H) is measured, as the inductive reactance is comparable with cell series resistance. The measured cell parameters (cell capacitance, dynamic resistance, etc) are used to calculate the mean carrier lifetime and diode factor at different cell temperatures.

  15. Long-term stability improvement of light-emitting diode using highly transparent graphene oxide paste.

    Science.gov (United States)

    Lee, Seungae; Kim, Yun Ki; Jang, Jyongsik

    2016-10-14

    A highly transparent paste adhesive is successfully fabricated by introducing graphene oxide (GO) to silicone paste adhesive by using a solvent-exchange method. The GO incorporated in the paste adhesive has a significant role in improving thermal conductivity, transparency and adhesive strength. The GO-embedded silicone paste is applied as a die-attach paste to light-emitting diodes (LEDs) in order to enhance the optical quality of the LEDs. The presence of GO in the die-attach layer of the LEDs gives rise to the enhancement of luminous intensity, effective heat dissipation, improvement of moisture barrier property as well as high adhesive strength. Consequently, the LEDs with the GO-embedded die-attach paste exhibit enhanced long-term stability. This novel approach provides a feasible and effective strategy for improving LED performance.

  16. Floating Zone Growth of LiFePO_4 Single Crystals

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    During the past few years the search for cathode materials of rechargeable lithium batteries has been mainly focused on lithium metal oxides. Among them, lithium iron phosphate, LiFePO4, provides an attractive voltage of 3.5 V, high theoretical capacity

  17. Bioeutectic® Ceramics for Biomedical Application Obtained by Laser Floating Zone Method. In vivo Evaluation

    Directory of Open Access Journals (Sweden)

    Piedad N. De Aza

    2014-03-01

    Full Text Available In this study, the Bioeutectic® blocks were inserted into the critical size defects of eight rabbits, using both tibiae, and the physical and chemical nature of the remodeled interface between the Bioeutectic® implants and the surrounding bone were performed at four and 15 months. The results showed a new fully mineralized bone growing in direct contact with the implants. The ionic exchange, taking place at the implant interface with the body fluids was essential in the process of the implant integration through a dissolution-precipitation-transformation mechanism. The study found the interface biologically and chemically active over the 15 months implantation period. The osteoblastic cells migrated towards the interface and colonized the surface at the contact areas with the bone. The new developed apatite structure of porous morphology mimics natural bone.

  18. Cern DD4424 ROM Diode Matrix

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  19. A Diode Matrix model M792

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  20. Bilayer avalanche spin-diode logic

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien [Institut d’Electronique Fondamentale, Univ. Paris-Sud, CNRS, 91405 Orsay (France); Fadel, Eric R. [Department of Materials Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wessels, Bruce W. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Materials Science & Engineering, Northwestern University, Evanston, IL 60208 (United States); Sahakian, Alan V. [Department of Electrical Engineering & Computer Science, Northwestern University, Evanston, IL 60208 (United States); Department of Biomedical Engineering, Northwestern University, Evanston, IL 60208 (United States)

    2015-11-15

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.