Semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

KAUST Repository

Semple, James; Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G.; McLachlan, Martyn A.; Anthopoulos, Thomas D.

2017-01-01

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

KAUST Repository

Semple, James

2017-01-02

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

Organic ferroelectric memory devices with inkjet-printed polymer electrodes on flexible substrates

KAUST Repository

Bhansali, Unnat Sampatraj

2013-05-01

Drop-on-demand piezoelectric inkjet-printing technique has been used to fabricate a functional cross-bar array of all-organic ferroelectric memory devices. The polymer-ferroelectric-polymer device consists of a ferroelectric copolymer P(VDF-TrFE) film sandwiched between inkjet-patterned, continuous, orthogonal lines of PEDOT:PSS polymer as the bottom and top electrodes. These devices exhibit well-saturated hysteresis curves with a maximum remnant polarization (Pr) = 6.7 μC/cm2, coercive field (E c) = 55 MV/m and a peak capacitance density of 45 nF/cm2. Our polarization fatigue measurements show that these devices retain ∼100% and 45% of their initial Pr values after 103 and 10 5 stress cycles, respectively. The overall performance and polarization retention characteristics of these ferroelectric capacitors with inkjet-printed polymer electrodes are comparable to metal and spin-cast polymer electrodes suggesting their potential use in large-area flexible electronics. © 2013 Elsevier Ltd. All rights reserved.

Printing an ITO-free flexible poly (4-vinylphenol) resistive switching device

Science.gov (United States)

Ali, Junaid; Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Aziz, Shahid; Choi, Kyung Hyun

2018-02-01

Resistive switching in a sandwich structure of silver (Ag)/Polyvinyl phenol (PVP)/carbon nanotube (CNTs)-silver nanowires (AgNWs) coated on a flexible PET substrate is reported in this work. Densely populated networks of one dimensional nano materials (1DNM), CNTs-AgNWs have been used as the conductive bottom electrode with the prominent features of high flexibility and low sheet resistance of 90 Ω/sq. Thin, yet uniform active layer of PVP was deposited on top of the spin coated 1DNM thin film through state of the art printing technique of electrohydrodynamic atomization (EHDA) with an average thickness of 170 ± 28 nm. Ag dots with an active area of ∼0.1 mm2 were deposited through roll to plate printing system as the top electrodes to complete the device fabrication of flexible memory device. Our memory device exhibited suitable electrical characteristics with OFF/ON ratio of 100:1, retention time of 60 min and electrical endurance for 100 voltage sweeps without any noticeable decay in performance. The resistive switching characteristics at a low current compliance of 3 nA were also evaluated for the application of low power consumption. This memory device is flexible and can sustain more than 100 bending cycles at a bending diameter of 2 cm with stable HRS and LRS values. Our proposed device shows promise to be used as a future potential nonvolatile memory device in flexible electronics.

Transparent and flexible write-once-read-many (WORM) memory device based on egg albumen

International Nuclear Information System (INIS)

Qu, Bo; Lin, Qianru; Wan, Tao; Du, Haiwei; Chen, Nan; Lin, Xi; Chu, Dewei

2017-01-01

Egg albumen, as an important protein resource in nature, is an interesting dielectric material exhibiting many fascinating properties for the development of environmentally friendly electronic devices. Taking advantage of their extraordinary transparency and flexibility, this paper presents an innovative preparation approach for albumen thin film based write-once-read-many-times (WORM) memory devices in a simple, cost-effective manner. The fabricated device shows superior data retention properties including non-volatile character (over 10 5 s) and promising great read durability (10 6 times). Furthermore, our results suggested that the electric-field-induced trap-controlled space charge limited current (SCLC) conduction is responsible for the observed resistance switching effect. The present study may likely reveal another pathway towards complete see-through electrical devices. (paper)

Transparent and flexible write-once-read-many (WORM) memory device based on egg albumen

Science.gov (United States)

Qu, Bo; Lin, Qianru; Wan, Tao; Du, Haiwei; Chen, Nan; Lin, Xi; Chu, Dewei

2017-08-01

Egg albumen, as an important protein resource in nature, is an interesting dielectric material exhibiting many fascinating properties for the development of environmentally friendly electronic devices. Taking advantage of their extraordinary transparency and flexibility, this paper presents an innovative preparation approach for albumen thin film based write-once-read-many-times (WORM) memory devices in a simple, cost-effective manner. The fabricated device shows superior data retention properties including non-volatile character (over 105 s) and promising great read durability (106 times). Furthermore, our results suggested that the electric-field-induced trap-controlled space charge limited current (SCLC) conduction is responsible for the observed resistance switching effect. The present study may likely reveal another pathway towards complete see-through electrical devices.

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-01-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-11-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

Science.gov (United States)

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

International Nuclear Information System (INIS)

Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Kim, Sowon; Choi, Kyung Hyun

2017-01-01

Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al 2 O 3 ) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications. (paper)

CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

KAUST Repository

Ghoneim, Mohamed T.

2014-12-01

Today\\'s mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

KAUST Repository

Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Kutbee, Arwa T.; Hanna, Amir; Hussain, Muhammad Mustafa

2014-01-01

Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

Science.gov (United States)

Gogurla, Narendar; Mondal, Suvra P.; Sinha, Arun K.; Katiyar, Ajit K.; Banerjee, Writam; Kundu, Subhas C.; Ray, Samit K.

2013-08-01

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

International Nuclear Information System (INIS)

Gogurla, Narendar; Mondal, Suvra P; Sinha, Arun K; Katiyar, Ajit K; Banerjee, Writam; Ray, Samit K; Kundu, Subhas C

2013-01-01

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems. (paper)

Transparent resistive switching memory using aluminum oxide on a flexible substrate

International Nuclear Information System (INIS)

Yeom, Seung-Won; Kim, Tan-Young; Ha, Hyeon Jun; Ju, Byeong-Kwon; Shin, Sang-Chul; Shim, Jae Won; Lee, Yun-Hi

2016-01-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al 2 O 3 -based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400–800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al 2 O 3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole–Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al 2 O 3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices. (letter)

Transparent resistive switching memory using aluminum oxide on a flexible substrate

Science.gov (United States)

Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

2016-02-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Guide wire extension for shape memory polymer occlusion removal devices

Science.gov (United States)

Maitland, Duncan J [Pleasant Hill, CA; Small, IV, Ward; Hartman, Jonathan [Sacramento, CA

2009-11-03

A flexible extension for a shape memory polymer occlusion removal device. A shape memory polymer instrument is transported through a vessel via a catheter. A flexible elongated unit is operatively connected to the distal end of the shape memory polymer instrument to enhance maneuverability through tortuous paths en route to the occlusion.

3D Printing of Shape Memory Polymers for Flexible Electronic Devices.

Science.gov (United States)

Zarek, Matt; Layani, Michael; Cooperstein, Ido; Sachyani, Ela; Cohn, Daniel; Magdassi, Shlomo

2016-06-01

The formation of 3D objects composed of shape memory polymers for flexible electronics is described. Layer-by-layer photopolymerization of methacrylated semicrystalline molten macromonomers by a 3D digital light processing printer enables rapid fabrication of complex objects and imparts shape memory functionality for electrical circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

An Artificial Flexible Visual Memory System Based on an UV-Motivated Memristor.

Science.gov (United States)

Chen, Shuai; Lou, Zheng; Chen, Di; Shen, Guozhen

2018-02-01

For the mimicry of human visual memory, a prominent challenge is how to detect and store the image information by electronic devices, which demands a multifunctional integration to sense light like eyes and to memorize image information like the brain by transforming optical signals to electrical signals that can be recognized by electronic devices. Although current image sensors can perceive simple images in real time, the image information fades away when the external image stimuli are removed. The deficiency between the state-of-the-art image sensors and visual memory system inspires the logical integration of image sensors and memory devices to realize the sensing and memory process toward light information for the bionic design of human visual memory. Hence, a facile architecture is designed to construct artificial flexible visual memory system by employing an UV-motivated memristor. The visual memory arrays can realize the detection and memory process of UV light distribution with a patterned image for a long-term retention and the stored image information can be reset by a negative voltage sweep and reprogrammed to the same or an other image distribution, which proves the effective reusability. These results provide new opportunities for the mimicry of human visual memory and enable the flexible visual memory device to be applied in future wearable electronics, electronic eyes, multifunctional robotics, and auxiliary equipment for visual handicapped. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

Science.gov (United States)

Goyal, Amit

2014-08-05

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit

2015-03-24

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Science.gov (United States)

Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

2016-08-01

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications

Science.gov (United States)

Baek, Il-Jin; Cho, Won-Ju

2018-02-01

We developed a hybrid organic-inorganic resistive random access memory (ReRAM) device that uses a solution-process to overcome the disadvantages of organic and inorganic materials for flexible memory applications. The drawbacks of organic and inorganic materials are a poor electrical characteristics and a lack of flexibility, respectively. We fabricated a hybrid organic-inorganic switching layer of ReRAM by blending HfOx or AlOx solution with PMMA solution and investigated the resistive switching behaviour in Ti/PMMA/Pt, Ti/PMMA-HfOx/Pt and Ti/PMMA-AlOx/Pt structures. It is found that PMMA-HfOx or PMMA-AlOx hybrid switching layer has a larger memory window, more stable durability and retention characteristics, and a better set/reset voltage distribution than PMMA layer. Further, it is confirmed that the flexibility of the PMMA-HfOx and PMMA-AlOx blended films was almost similar to that of the organic PMMA film. Thus, the solution-processed organic-inorganic blended films are considered a promising material for a non-volatile memory device on a flexible or wearable electronic system.

{100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

Science.gov (United States)

Goyal, Amit [Knoxville, TN

2012-05-15

Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Solid-state Memory on Flexible Silicon for Future Electronic Applications

KAUST Repository

Ghoneim, Mohamed

2016-11-01

Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Science.gov (United States)

Ghoneim, M. T.; Hussain, M. M.

2015-08-01

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ˜260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

3D Printing: 3D Printing of Shape Memory Polymers for Flexible Electronic Devices (Adv. Mater. 22/2016).

Science.gov (United States)

Zarek, Matt; Layani, Michael; Cooperstein, Ido; Sachyani, Ela; Cohn, Daniel; Magdassi, Shlomo

2016-06-01

On page 4449, D. Cohn, S. Magdassi, and co-workers describe a general and facile method based on 3D printing of methacrylated macromonomers to fabricate shape-memory objects that can be used in flexible and responsive electrical circuits. Such responsive objects can be used in the fabrication of soft robotics, minimal invasive medical devices, sensors, and wearable electronics. The use of 3D printing overcomes the poor processing characteristics of thermosets and enables complex geometries that are not easily accessible by other techniques. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Energy Technology Data Exchange (ETDEWEB)

Ghoneim, M. T.; Hussain, M. M., E-mail: muhammadmustafa.hussain@kaust.edu.sa [Integrated Nanotechnology Lab, Electrical Engineering, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)

2015-08-03

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

International Nuclear Information System (INIS)

Ghoneim, M. T.; Hussain, M. M.

2015-01-01

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

KAUST Repository

Ghoneim, Mohamed T.

2015-08-05

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

Flexible devices: from materials, architectures to applications

Science.gov (United States)

Zou, Mingzhi; Ma, Yue; Yuan, Xin; Hu, Yi; Liu, Jie; Jin, Zhong

2018-01-01

Flexible devices, such as flexible electronic devices and flexible energy storage devices, have attracted a significant amount of attention in recent years for their potential applications in modern human lives. The development of flexible devices is moving forward rapidly, as the innovation of methods and manufacturing processes has greatly encouraged the research of flexible devices. This review focuses on advanced materials, architecture designs and abundant applications of flexible devices, and discusses the problems and challenges in current situations of flexible devices. We summarize the discovery of novel materials and the design of new architectures for improving the performance of flexible devices. Finally, we introduce the applications of flexible devices as key components in real life. Project supported by the National Key R&D Program of China (Nos. 2017YFA0208200, 2016YFB0700600, 2015CB659300), the National Natural Science Foundation of China (Nos. 21403105, 21573108), and the Fundamental Research Funds for the Central Universities (No. 020514380107).

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

Science.gov (United States)

Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

2013-01-01

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Neuron-inspired flexible memristive device on silicon (100)

KAUST Repository

Ghoneim, Mohamed T.

2017-06-18

Comprehensive understanding of the world\\'s most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At the same time, brain cortex is folded allowing trillions of neurons to be integrated in a compact volume. Therefore, we report flexible aluminium oxide based memristive devices fabricated and then derived from widely used bulk mono-crystalline silicon (100). We use complementary metal oxide semiconductor based processes to layout the foundation for ultra large scale integration (ULSI) of such memory devices to advance the task of comprehending a physical model of human brain.

Nanoscale memory devices

International Nuclear Information System (INIS)

Chung, Andy; Deen, Jamal; Lee, Jeong-Soo; Meyyappan, M

2010-01-01

This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO 2 . (topical review)

Metal-free, single-polymer device exhibits resistive memory effect

KAUST Repository

Bhansali, Unnat Sampatraj; Khan, Yasser; Cha, Dong Kyu; Almadhoun, Mahmoud N.; Li, Ruipeng; Chen, Long; Amassian, Aram; Odeh, Ihab N.; Alshareef, Husam N.

2013-01-01

All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.

Metal-free, single-polymer device exhibits resistive memory effect

KAUST Repository

Bhansali, Unnat Sampatraj

2013-12-23

All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.

Flexible magnetic thin films and devices

Science.gov (United States)

Sheng, Ping; Wang, Baomin; Li, Runwei

2018-01-01

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices. Project supported by the National Key R&D Program of China (No. 2016YFA0201102), the National Natural Science Foundation of China (Nos. 51571208, 51301191, 51525103, 11274321, 11474295, 51401230), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (No. 2016270), the Key Research Program of the Chinese Academy of Sciences (No. KJZD-EW-M05), the Ningbo Major Project for Science and Technology (No. 2014B11011), the Ningbo Science and Technology Innovation Team (No. 2015B11001), and the Ningbo Natural Science Foundation (No. 2015A610110).

Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

KAUST Repository

Caraveo-Frescas, Jesus Alfonso; Khan, M. A.; Alshareef, Husam N.

2014-01-01

Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

KAUST Repository

Caraveo-Frescas, Jesus Alfonso

2014-06-10

Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.

Flexible NAND-Like Organic Ferroelectric Memory Array

NARCIS (Netherlands)

Kam, B.; Ke, T.H.; Chasin, A.; Tyagi, M.; Cristoferi, C.; Tempelaars, K.; Breemen, A.J.J.M. van; Myny, K.; Schols, S.; Genoe, J.; Gelinck, G.H.; Heremans, P.

2014-01-01

We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-01-01

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.

Science.gov (United States)

Kim, Yo-Han; Lee, Eun Yeol; Lee, Hyun Ho; Seo, Tae Seok

2017-05-17

Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 10 1 and mobility of 5.005 cm 2 /V·s. For the memory capacitor, the flat-band voltage shift (ΔV FB ) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔV th ) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

Flexible energy-storage devices: design consideration and recent progress.

Science.gov (United States)

Wang, Xianfu; Lu, Xihong; Liu, Bin; Chen, Di; Tong, Yexiang; Shen, Guozhen

2014-07-23

Flexible energy-storage devices are attracting increasing attention as they show unique promising advantages, such as flexibility, shape diversity, light weight, and so on; these properties enable applications in portable, flexible, and even wearable electronic devices, including soft electronic products, roll-up displays, and wearable devices. Consequently, considerable effort has been made in recent years to fulfill the requirements of future flexible energy-storage devices, and much progress has been witnessed. This review describes the most recent advances in flexible energy-storage devices, including flexible lithium-ion batteries and flexible supercapacitors. The latest successful examples in flexible lithium-ion batteries and their technological innovations and challenges are reviewed first. This is followed by a detailed overview of the recent progress in flexible supercapacitors based on carbon materials and a number of composites and flexible micro-supercapacitors. Some of the latest achievements regarding interesting integrated energy-storage systems are also reviewed. Further research direction is also proposed to surpass existing technological bottle-necks and realize idealized flexible energy-storage devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transferable and flexible label-like macromolecular memory on arbitrary substrates with high performance and a facile methodology.

Science.gov (United States)

Lai, Ying-Chih; Hsu, Fang-Chi; Chen, Jian-Yu; He, Jr-Hau; Chang, Ting-Chang; Hsieh, Ya-Ping; Lin, Tai-Yuan; Yang, Ying-Jay; Chen, Yang-Fang

2013-05-21

A newly designed transferable and flexible label-like organic memory based on a graphene electrode behaves like a sticker, and can be readily placed on desired substrates or devices for diversified purposes. The memory label reveals excellent performance despite its physical presentation. This may greatly extend the memory applications in various advanced electronics and provide a simple scheme to integrate with other electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

International Nuclear Information System (INIS)

Cho, Ikjun; Cho, Jinhan; Kim, Beom Joon; Cho, Jeong Ho; Ryu, Sook Won

2014-01-01

Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au NPs ) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au NP ) n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO 2 gate dielectric layer. For a single Au NP layer (i.e. PAD/TOA-Au NP ) 1 ) with a number density of 1.82 × 10 12 cm −2 , the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au NP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV th ) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10 6 ) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate. (paper)

Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

Science.gov (United States)

Watkins, James

2013-03-01

Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

Nature-Inspired Structural Materials for Flexible Electronic Devices.

Science.gov (United States)

Liu, Yaqing; He, Ke; Chen, Geng; Leow, Wan Ru; Chen, Xiaodong

2017-10-25

Exciting advancements have been made in the field of flexible electronic devices in the last two decades and will certainly lead to a revolution in peoples' lives in the future. However, because of the poor sustainability of the active materials in complex stress environments, new requirements have been adopted for the construction of flexible devices. Thus, hierarchical architectures in natural materials, which have developed various environment-adapted structures and materials through natural selection, can serve as guides to solve the limitations of materials and engineering techniques. This review covers the smart designs of structural materials inspired by natural materials and their utility in the construction of flexible devices. First, we summarize structural materials that accommodate mechanical deformations, which is the fundamental requirement for flexible devices to work properly in complex environments. Second, we discuss the functionalities of flexible devices induced by nature-inspired structural materials, including mechanical sensing, energy harvesting, physically interacting, and so on. Finally, we provide a perspective on newly developed structural materials and their potential applications in future flexible devices, as well as frontier strategies for biomimetic functions. These analyses and summaries are valuable for a systematic understanding of structural materials in electronic devices and will serve as inspirations for smart designs in flexible electronics.

Movable MEMS Devices on Flexible Silicon

KAUST Repository

Ahmed, Sally

2013-05-05

Flexible electronics have gained great attention recently. Applications such as flexible displays, artificial skin and health monitoring devices are a few examples of this technology. Looking closely at the components of these devices, although MEMS actuators and sensors can play critical role to extend the application areas of flexible electronics, fabricating movable MEMS devices on flexible substrates is highly challenging. Therefore, this thesis reports a process for fabricating free standing and movable MEMS devices on flexible silicon substrates; MEMS flexure thermal actuators have been fabricated to illustrate the viability of the process. Flexure thermal actuators consist of two arms: a thin hot arm and a wide cold arm separated by a small air gap; the arms are anchored to the substrate from one end and connected to each other from the other end. The actuator design has been modified by adding etch holes in the anchors to suit the process of releasing a thin layer of silicon from the bulk silicon substrate. Selecting materials that are compatible with the release process was challenging. Moreover, difficulties were faced in the fabrication process development; for example, the structural layer of the devices was partially etched during silicon release although it was protected by aluminum oxide which is not attacked by the releasing gas . Furthermore, the thin arm of the thermal actuator was thinned during the fabrication process but optimizing the patterning and etching steps of the structural layer successfully solved this problem. Simulation was carried out to compare the performance of the original and the modified designs for the thermal actuators and to study stress and temperature distribution across a device. A fabricated thermal actuator with a 250 μm long hot arm and a 225 μm long cold arm separated by a 3 μm gap produced a deflection of 3 μm before silicon release, however, the fabrication process must be optimized to obtain fully functioning

Towards Flexibility Detection in Device-Level Energy Consumption

DEFF Research Database (Denmark)

Neupane, Bijay; Pedersen, Torben Bach; Thiesson, Bo

2014-01-01

The increasing drive towards green energy has boosted the installation of Renewable Energy Sources (RES). Increasing the share of RES in the power grid requires demand management by flexibility in the consumption. In this paper, we perform a state-of-the-art analysis on the flexibility and operat......The increasing drive towards green energy has boosted the installation of Renewable Energy Sources (RES). Increasing the share of RES in the power grid requires demand management by flexibility in the consumption. In this paper, we perform a state-of-the-art analysis on the flexibility...... and operation patterns of the devices in a set of real households. We propose a number of specific pre-processing steps such as operation stage segmentation, and aberrant operation duration removal to clean device level data. Further, we demonstrate various device operation properties such as hourly and daily...... regularities and patterns and the correlation between operating different devices. Subsequently, we show the existence of detectable time and energy flexibility in device operations. Finally, we provide various results providing a foundation for load- and flexibility-detection and -prediction at the device...

Recent advances in flexible and wearable organic optoelectronic devices

Science.gov (United States)

Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

2018-01-01

Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

Projected phase-change memory devices.

Science.gov (United States)

Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

2015-09-03

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

A Flexible High-Performance Photoimaging Device Based on Bioinspired Hierarchical Multiple-Patterned Plasmonic Nanostructures.

Science.gov (United States)

Lee, Yoon Ho; Lee, Tae Kyung; Kim, Hongki; Song, Inho; Lee, Jiwon; Kang, Saewon; Ko, Hyunhyub; Kwak, Sang Kyu; Oh, Joon Hak

2018-03-01

In insect eyes, ommatidia with hierarchical structured cornea play a critical role in amplifying and transferring visual signals to the brain through optic nerves, enabling the perception of various visual signals. Here, inspired by the structure and functions of insect ommatidia, a flexible photoimaging device is reported that can simultaneously detect and record incoming photonic signals by vertically stacking an organic photodiode and resistive memory device. A single-layered, hierarchical multiple-patterned back reflector that can exhibit various plasmonic effects is incorporated into the organic photodiode. The multiple-patterned flexible organic photodiodes exhibit greatly enhanced photoresponsivity due to the increased light absorption in comparison with the flat systems. Moreover, the flexible photoimaging device shows a well-resolved spatiotemporal mapping of optical signals with excellent operational and mechanical stabilities at low driving voltages below half of the flat systems. Theoretical calculation and scanning near-field optical microscopy analyses clearly reveal that multiple-patterned electrodes have much stronger surface plasmon coupling than flat and single-patterned systems. The developed methodology provides a versatile and effective route for realizing high-performance optoelectronic and photonic systems. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible powder electroluminescent device on silver nanowire electrode

International Nuclear Information System (INIS)

Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T.; Park, J.H.; Lee, S.H.; Kim, J.S.

2015-01-01

We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device

Flexible powder electroluminescent device on silver nanowire electrode

Energy Technology Data Exchange (ETDEWEB)

Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T. [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Park, J.H. [AIDEN company, Cheongju-si 361-911 (Korea, Republic of); Lee, S.H. [R& D Business Lab, Hyosung Corporation, Anyang 431-080 (Korea, Republic of); Kim, J.S., E-mail: jsukim@pknu.ac.kr [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

2015-09-15

We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device.

Bipolar resistive switching properties of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} thin film for flexible memory applications

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhipeng; Zhu, Jun; Zhou, Yunxia; Liu, Xingpeng [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu (China)

2018-01-15

An Au/Ni/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Au flexible memory device fabricated on a polyethylene terephthalate substrate was studied for flexible resistive random access memory applications. A typical bipolar resistive switching behavior was revealed with an OFF/ON ratio of approximately 15. The reproducibility and uniformity were investigated using 100 repetitive write/erase cycles. The retention property did not degrade for up to 5 x 10{sup 4} s, and the resistive switching properties did not degrade even under bending conditions, which indicated good mechanical flexibility. The current-voltage characteristics of the memory device show a Poole-Frenkel emission conduction mechanism in the high-voltage region in the high-resistance state, while in the low-voltage region, the Ohmic contact and space charge limit current responded to the low-resistance state and high-resistance state, respectively. Combined with the conductance mechanism, the resistive switching behavior is attributed to conductive filaments forming and rupturing due to oxygen vacancies migrating under the external driving electric field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Smoothing type buffer memory device

International Nuclear Information System (INIS)

Podorozhnyj, D.M.; Yashin, I.V.

1990-01-01

The layout of the micropower 4-bit smoothing type buffer memory device allowing one to record without counting the sequence of input randomly distributed pulses in multi-channel devices with serial poll, is given. The power spent by a memory cell for one binary digit recording is not greater than 0.15 mW, the device dead time is 10 mus

Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

International Nuclear Information System (INIS)

Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

2015-01-01

Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

Conductive polymer/metal composites for interconnect of flexible devices

Science.gov (United States)

Kawakita, Jin; Hashimoto Shinoda, Yasuo; Shuto, Takanori; Chikyow, Toyohiro

2015-06-01

An interconnect of flexible and foldable devices based on advanced electronics requires high electrical conductivity, flexibility, adhesiveness on a plastic substrate, and efficient productivity. In this study, we investigated the applicability of a conductive polymer/metal composite to the interconnect of flexible devices. By combining an inkjet process and a photochemical reaction, micropatterns of a polypyrrole/silver composite were formed on flexible plastic substrates with an average linewidth of approximately 70 µm within 10 min. The conductivity of the composite was improved to 6.0 × 102 Ω-1·cm-1. From these results, it is expected that the conducting polymer/metal composite can be applied to the microwiring of flexible electronic devices.

Static memory devices

NARCIS (Netherlands)

2012-01-01

A semiconductor memory device includes n-wells (22) and p-wells (24) used to make up a plurality of memory cell elements (40). The n-wells (22) and p-5 wells (24) can be back-biased to improve reading and writing performance. One of the n-wells and p-wells can be globally biased while the other one

Rapid formation and flexible expression of memories of subliminal word pairs.

Science.gov (United States)

Reber, Thomas P; Henke, Katharina

2011-01-01

Our daily experiences are incidentally and rapidly encoded as episodic memories. Episodic memories consist of numerous associations (e.g., who gave what to whom where and when) that can be expressed flexibly in new situations. Key features of episodic memory are speed of encoding, its associative nature, and its representational flexibility. Another defining feature of human episodic memory has been consciousness of encoding/retrieval. Here, we show that humans can rapidly form associations between subliminal words and minutes later retrieve these associations even if retrieval words were conceptually related to, but different from encoding words. Because encoding words were presented subliminally, associative encoding, and retrieval were unconscious. Unconscious association formation and retrieval were dependent on a preceding understanding of task principles. We conclude that key computations underlying episodic memory - rapid encoding and flexible expression of associations - can operate outside consciousness.

Flexible Retrieval: When True Inferences Produce False Memories

Science.gov (United States)

Carpenter, Alexis C.; Schacter, Daniel L.

2017-01-01

Episodic memory involves flexible retrieval processes that allow us to link together distinct episodes, make novel inferences across overlapping events, and recombine elements of past experiences when imagining future events. However, the same flexible retrieval and recombination processes that underpin these adaptive functions may also leave…

Flexible Organic Electronics in Biology: Materials and Devices.

Science.gov (United States)

Liao, Caizhi; Zhang, Meng; Yao, Mei Yu; Hua, Tao; Li, Li; Yan, Feng

2015-12-09

At the convergence of organic electronics and biology, organic bioelectronics attracts great scientific interest. The potential applications of organic semiconductors to reversibly transmit biological signals or stimulate biological tissues inspires many research groups to explore the use of organic electronics in biological systems. Considering the surfaces of movable living tissues being arbitrarily curved at physiological environments, the flexibility of organic bioelectronic devices is of paramount importance in enabling stable and reliable performances by improving the contact and interaction of the devices with biological systems. Significant advances in flexible organic bio-electronics have been achieved in the areas of flexible organic thin film transistors (OTFTs), polymer electrodes, smart textiles, organic electrochemical ion pumps (OEIPs), ion bipolar junction transistors (IBJTs) and chemiresistors. This review will firstly discuss the materials used in flexible organic bioelectronics, which is followed by an overview on various types of flexible organic bioelectronic devices. The versatility of flexible organic bioelectronics promises a bright future for this emerging area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Memory-Based Programmable Logic Device Using Look-Up Table Cascade with Synchronous Static Random Access Memories

Science.gov (United States)

Nakamura, Kazuyuki; Sasao, Tsutomu; Matsuura, Munehiro; Tanaka, Katsumasa; Yoshizumi, Kenichi; Nakahara, Hiroki; Iguchi, Yukihiro

2006-04-01

A large-scale memory-technology-based programmable logic device (PLD) using a look-up table (LUT) cascade is developed in the 0.35-μm standard complementary metal oxide semiconductor (CMOS) logic process. Eight 64 K-bit synchronous SRAMs are connected to form an LUT cascade with a few additional circuits. The features of the LUT cascade include: 1) a flexible cascade connection structure, 2) multi phase pseudo asynchronous operations with synchronous static random access memory (SRAM) cores, and 3) LUT-bypass redundancy. This chip operates at 33 MHz in 8-LUT cascades at 122 mW. Benchmark results show that it achieves a comparable performance to field programmable gate array (FPGAs).

From silicon to organic nanoparticle memory devices.

Science.gov (United States)

Tsoukalas, D

2009-10-28

After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

Organic Nonvolatile Memory Devices Based on Ferroelectricity

NARCIS (Netherlands)

Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Organic nonvolatile memory devices based on ferroelectricity

NARCIS (Netherlands)

Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

KAUST Repository

Ghoneim, Mohamed T.

2015-04-24

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

Toward flexible polymer and paper-based energy storage devices

Energy Technology Data Exchange (ETDEWEB)

Nyholm, Leif [Department of Materials Chemistry, The Aangstroem Laboratory, Uppsala University, Box 538, SE-751 21 Uppsala (Sweden); Nystroem, Gustav; Mihranyan, Albert; Stroemme, Maria [Nanotechnology and Functional Materials, Department of Engineering Sciences, The Aangstroem Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

2011-09-01

All-polymer and paper-based energy storage devices have significant inherent advantages in comparison with many currently employed batteries and supercapacitors regarding environmental friendliness, flexibility, cost and versatility. The research within this field is currently undergoing an exciting development as new polymers, composites and paper-based devices are being developed. In this report, we review recent progress concerning the development of flexible energy storage devices based on electronically conducting polymers and cellulose containing composites with particular emphasis on paper-based batteries and supercapacitors. We discuss recent progress in the development of the most commonly used electronically conducting polymers used in flexible device prototypes, the advantages and disadvantages of this type of energy storage devices, as well as the two main approaches used in the manufacturing of paper-based charge storage devices. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A study on electromechanical carbon nanotube memory devices

International Nuclear Information System (INIS)

Kang, Jeong Won; Hwang, Ho Jung

2005-01-01

Electromechanical operations of carbon-nanotube (CNT) bridge memory device were investigated by using atomistic simulations based on empirical potentials. The nanotube-bridge memory device was operated by the electrostatic and the van der Waals forces acting on the nanotube-bridge. For the CNT bridge memory device, the van der Waals interactions between the CNT bridge and the oxide were very important. As the distance between the CNT bridge and the oxide decreased and the van der Waals interaction energy increased, the pull-in bias of the CNT-bridge decreased and the nonvolatility of the nanotube-bridge memory device increased, while the pull-out voltages increased. When the materials composed of the oxide film are different, since the van der Waals interactions must be also different, the oxide materials must be carefully selected for the CNT-bridge memory device to work as a nonvolatile memory.

Flexible electroluminescent device with inkjet-printed carbon nanotube electrodes

Science.gov (United States)

Azoubel, Suzanna; Shemesh, Shay; Magdassi, Shlomo

2012-08-01

Carbon nanotube (CNTs) inks may provide an effective route for producing flexible electronic devices by digital printing. In this paper we report on the formulation of highly concentrated aqueous CNT inks and demonstrate the fabrication of flexible electroluminescent (EL) devices by inkjet printing combined with wet coating. We also report, for the first time, on the formation of flexible EL devices in which all the electrodes are formed by inkjet printing of low-cost multi-walled carbon nanotubes (MWCNTs). Several flexible EL devices were fabricated by using different materials for the production of back and counter electrodes: ITO/MWCNT and MWCNT/MWCNT. Transparent electrodes were obtained either by coating a thin layer of the CNTs or by inkjet printing a grid which is composed of empty cells surrounded by MWCNTs. It was found that the conductivity and transparency of the electrodes are mainly controlled by the MWCNT film thickness, and that the dominant factor in the luminance intensity is the transparency of the electrode.

Weak Memory Models: Balancing Definitional Simplicity and Implementation Flexibility

OpenAIRE

Zhang, Sizhuo; Vijayaraghavan, Muralidaran; Arvind

2017-01-01

The memory model for RISC-V, a newly developed open source ISA, has not been finalized yet and thus, offers an opportunity to evaluate existing memory models. We believe RISC-V should not adopt the memory models of POWER or ARM, because their axiomatic and operational definitions are too complicated. We propose two new weak memory models: WMM and WMM-S, which balance definitional simplicity and implementation flexibility differently. Both allow all instruction reorderings except overtaking of...

Constructive episodic simulation, flexible recombination, and memory errors.

Science.gov (United States)

Schacter, Daniel L; Carpenter, Alexis C; Devitt, Aleea; Roberts, Reece P; Addis, Donna Rose

2018-01-01

According to Mahr & Csibra (M&C), the view that the constructive nature of episodic memory is related to its role in simulating future events has difficulty explaining why memory is often accurate. We hold this view, but disagree with their conclusion. Here we consider ideas and evidence regarding flexible recombination processes in episodic retrieval that accommodate both accuracy and distortion.

Flexible MgO Barrier Magnetic Tunnel Junctions.

Science.gov (United States)

Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong-Hyun; Yang, Hyunsoo

2016-07-01

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible spintronic devices on Kapton

DEFF Research Database (Denmark)

Bedoya-Pinto, Amilcar; Donolato, Marco; Gobbi, Marco

2014-01-01

Magnetic tunnel junctions and nano-sized domain-wall conduits have been fabricated on the flexible substrate Kapton. Despite the delicate nature of tunneling barriers and zig-zag shaped nanowires, the devices show an outstanding integrity and robustness upon mechanical bending. High values of ben...

Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

Science.gov (United States)

Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

2016-06-01

Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metal-organic molecular device for non-volatile memory storage

International Nuclear Information System (INIS)

Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

2014-01-01

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

Flexible Memristive Devices Based on InP/ZnSe/ZnS Core-Multishell Quantum Dot Nanocomposites.

Science.gov (United States)

Kim, Do Hyeong; Wu, Chaoxing; Park, Dong Hyun; Kim, Woo Kyum; Seo, Hae Woon; Kim, Sang Wook; Kim, Tae Whan

2018-05-02

The effects of the ZnS shell layer on the memory performances of flexible memristive devices based on quantum dots (QDs) with an InP/ZnSe/ZnS core-multishell structure embedded in a poly(methylmethacrylate) layer were investigated. The on/off ratios of the devices based on QDs with an InP/ZnSe core-shell structure and with an InP/ZnSe/ZnS core-multishell structure were approximately 4.2 × 10 2 and 8.5 × 10 3 , respectively, indicative of enhanced charge storage capability in the latter. After bending, the memory characteristics of the memristive devices based on QDs with the InP/ZnSe/ZnS structure were similar to those before bending. In addition, those devices maintained the same on/off ratios for retention time of 1 × 10 4 s, and the number of endurance cycles was above 1 × 10 2 . The reset voltages ranged from -2.3 to -3.1 V, and the set voltages ranged from 1.3 to 2.1 V, indicative of reliable electrical characteristics. Furthermore, the possible operating mechanisms of the devices are presented on the basis of the electron trapping and release mode.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Science.gov (United States)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Considerations of device and operational flexibility in FER

International Nuclear Information System (INIS)

Sugihara, Masayoshi; Miki, Nobuharu; Nishio, Satoshi; Yamada, Masao; Yamamoto, Shin

1988-01-01

Expected physics uncertainties in DT burning plasma of FER, which may not be removed completely at the start of construction or DT operation, are reviewed. Several possible device and operational flexibility scenarios to cope with these uncertainties are considered. They are (1) Plasma size enlargement scenario, (2) Plasma shape flexibility scenario, (3) Heating/Current drive/Control system flexibility scenario, (4) Impurity control system flexibility scenario and (5) Advanced operation scenario. Feasibility of these flexibility scenarios are examined and shown to be practicable. However, careful assessment of the physics data base is necessary at the start of construction and DT operation to proceed to actually implement these flexibilities in FER. (author)

Chemically modified graphene based supercapacitors for flexible and miniature devices

Science.gov (United States)

Ghosh, Debasis; Kim, Sang Ouk

2015-09-01

Rapid progress in the portable and flexible electronic devises has stimulated supercapacitor research towards the design and fabrication of high performance flexible devices. Recent research efforts for flexible supercapacitor electrode materials are highly focusing on graphene and chemically modified graphene owing to the unique properties, including large surface area, high electrical and thermal conductivity, excellent mechanical flexibility, and outstanding chemical stability. This invited review article highlights current status of the flexible electrode material research based on chemically modified graphene for supercapacitor application. A variety of electrode architectures prepared from chemically modified graphene are summarized in terms of their structural dimensions. Novel prototypes for the supercapacitor aiming at flexible miniature devices, i.e. microsupercapacitor with high energy and power density are highlighted. Future challenges relevant to graphene-based flexible supercapacitors are also suggested. [Figure not available: see fulltext.

Optimization of flexible substrate by gradient elastic modulus design for performance improvement of flexible electronic devices

Science.gov (United States)

Xia, Minggang; Liang, Chunping; Hu, Ruixue; Cheng, Zhaofang; Liu, Shiru; Zhang, Shengli

2018-05-01

It is imperative and highly desirable to buffer the stress in flexible electronic devices. In this study, we designed and fabricated lamellate poly(dimethylsiloxane) (PDMS) samples with gradient elastic moduli, motivated by the protection of the pomelo pulp by its skin, followed by the measurements of their elastic moduli. We demonstrated that the electrical and fatigue performances of a Ag-nanowire thin film device on the PDMS substrate with a gradient elastic modulus are significantly better than those of a device on a substrate with a monolayer PDMS. This study provides a robust scheme to effectively protect flexible electronic devices.

NextFlex Flexible Hybrid Electronics Manufacturing

Science.gov (United States)

2016-10-01

of the power of silicon and the economies and unique capabilities of printed circuitry to form a new class of devices for the Internet of Things (IoT...innovative medical devices that can take Processor* Display* Memory + Polymer Solar Cell # Flexible Substrate Sensors* Antenna #Thin Film Battery

C-RAM: breaking mobile device memory barriers using the cloud

OpenAIRE

Pamboris, A; Pietzuch, P

2015-01-01

?Mobile applications are constrained by the available memory of mobile devices. We present C-RAM, a system that uses cloud-based memory to extend the memory of mobile devices. It splits application state and its associated computation between a mobile device and a cloud node to allow applications to consume more memory, while minimising the performance impact. C-RAM thus enables developers to realise new applications or port legacy desktop applications with a large memory footprint to mobile ...

The role of verbal labels on flexible memory retrieval at 12-months of age.

Science.gov (United States)

Taylor, Gemma; Liu, Hao; Herbert, Jane S

2016-11-01

The provision of verbal labels enhances 12-month-old infants' memory flexibility across a form change in a puppet imitation task (Herbert, 2011), although the mechanisms for this effect remain unclear. Here we investigate whether verbal labels can scaffold flexible memory retrieval when task difficulty increases and consider the mechanism responsible for the effect of language cues on early memory flexibility. Twelve-month-old infants were provided with English, Chinese, or empty language cues during a difficult imitation task, a combined change in the puppet's colour and form at the test (Hayne et al., 1997). Imitation performance by infants in the English language condition only exceeded baseline performance after the 10-min delay. Thus, verbal labels facilitated flexible memory retrieval on this task. There were no correlations between infants' language comprehension and imitation performance. Thus, it is likely that verbal labels facilitate both attention and categorisation during encoding and retrieval. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

Fast Initialization of Bubble-Memory Systems

Science.gov (United States)

Looney, K. T.; Nichols, C. D.; Hayes, P. J.

1986-01-01

Improved scheme several orders of magnitude faster than normal initialization scheme. State-of-the-art commercial bubble-memory device used. Hardware interface designed connects controlling microprocessor to bubblememory circuitry. System software written to exercise various functions of bubble-memory system in comparison made between normal and fast techniques. Future implementations of approach utilize E2PROM (electrically-erasable programable read-only memory) to provide greater system flexibility. Fastinitialization technique applicable to all bubble-memory devices.

Flexible organic electronic devices: Materials, process and applications

International Nuclear Information System (INIS)

Logothetidis, Stergios

2008-01-01

The research for the development of flexible organic electronic devices (FEDs) is rapidly increasing worldwide, since FEDs will change radically several aspects of everyday life. Although there has been considerable progress in the area of flexible inorganic devices (a-Si or solution processed Si), there are numerous advances in the organic (semiconducting, conducting and insulating), inorganic and hybrid (organic-inorganic) materials that exhibit customized properties and stability, and in the synthesis and preparation methods, which are characterized by a significant amount of multidisciplinary efforts. Furthermore, the development and encapsulation of organic electronic devices onto flexible polymeric substrates by large-scale and low-cost roll-to-roll production processes will allow their market implementation in numerous application areas, including displays, lighting, photovoltaics, radio-frequency identification circuitry and chemical sensors, as well as to a new generation of modern exotic applications. In this work, we report on some of the latest advances in the fields of polymeric substrates, hybrid barrier layers, inorganic and organic materials to be used as novel active and functional thin films and nanomaterials as well as for the encapsulation of the materials components for the production of FEDs (flexible organic light-emitting diodes, and organic photovoltaics). Moreover, we will emphasize on the real-time optical monitoring and characterization of the growing films onto the flexible polymeric substrates by spectroscopic ellipsometry methods. Finally, the potentiality for the in-line characterization processes for the development of organic electronics materials will be emphasized, since it will also establish the framework for the achievement of the future scientific and technological breakthroughs

Electronic polymer memory devices-Easy to fabricate, difficult to understand

International Nuclear Information System (INIS)

Paul, Shashi; Salaoru, Iulia

2010-01-01

There has been a number reports on polymer memory devices for the last one decade. Polymer memory devices are fabricated by depositing a blend (an admixture of organic polymer, small organic molecules and nanoparticles) between two metal electrodes. These devices show two electrical conductance states ('1' and '0') when voltage is applied, thus rendering the structures suitable for data retention. These two states can be viewed as the realisation of memory devices. However, polymer memory devices reported so far suffer from multiple drawbacks that render their industrial implementation premature. There is a large discrepancy in the results reported by different groups. This article attempts to answer some of the questions.

Flexible molecular-scale electronic devices composed of diarylethene photoswitching molecules

KAUST Repository

Kim, Dongku; Jeong, Hyunhak; Lee, Hanki; Hwang, Wangtaek; Wolf, Jannic Sebastian; Scheer, Elke; Huhn, Thomas; Jeong, Heejun; Lee, Takhee

2014-01-01

The electrical properties of diarylethene photoswitching molecular devices on flexible substrates are studied. When exposed to UV or visible light, diarylethene molecular devices show two electrical states (a high and a low conductance state) with a discrepancy of an order of magnitude in the level of current between the two states. The diarylethene flexible molecular devices exhibit excellent long-time stability and reliable electrical characteristics in both conductance states when subjected to various mechanical stresses. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible molecular-scale electronic devices composed of diarylethene photoswitching molecules

KAUST Repository

Kim, Dongku

2014-03-31

The electrical properties of diarylethene photoswitching molecular devices on flexible substrates are studied. When exposed to UV or visible light, diarylethene molecular devices show two electrical states (a high and a low conductance state) with a discrepancy of an order of magnitude in the level of current between the two states. The diarylethene flexible molecular devices exhibit excellent long-time stability and reliable electrical characteristics in both conductance states when subjected to various mechanical stresses. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

KAUST Repository

Rojas, Jhonathan Prieto

2013-01-07

Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

Science.gov (United States)

Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

2017-09-01

A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

Working memory load affects repetitive behaviour but not cognitive flexibility in adolescent autism spectrum disorder.

Science.gov (United States)

Wolff, Nicole; Chmielewski, Witold X; Beste, Christian; Roessner, Veit

2017-03-16

Autism spectrum disorder (ASD) is associated with repetitive and stereotyped behaviour, suggesting that cognitive flexibility may be deficient in ASD. A central, yet not examined aspect to understand possible deficits in flexible behaviour in ASD relates (i) to the role of working memory and (ii) to neurophysiological mechanisms underlying behavioural modulations. We analysed behavioural and neurophysiological (EEG) correlates of cognitive flexibility using a task-switching paradigm with and without working memory load in adolescents with ASD and typically developing controls (TD). Adolescents with ASD versus TD show similar performance in task switching with no memory load, indicating that 'pure' cognitive flexibility is not in deficit in adolescent ASD. However performance during task repetition decreases with increasing memory load. Neurophysiological data reflect the pattern of behavioural effects, showing modulations in P2 and P3 event-related potentials. Working memory demands affect repetitive behaviour while processes of cognitive flexibility are unaffected. Effects emerge due to deficits in preparatory attentional processes and deficits in task rule activation, organisation and implementation of task sets when repetitive behaviour is concerned. It may be speculated that the habitual response mode in ASD (i.e. repetitive behaviour) is particularly vulnerable to additional demands on executive control processes.

Carbon Nanotubes and Graphene for Flexible Electrochemical Energy Storage: from Materials to Devices.

Science.gov (United States)

Wen, Lei; Li, Feng; Cheng, Hui-Ming

2016-06-01

Flexible electrochemical energy storage (FEES) devices have received great attention as a promising power source for the emerging field of flexible and wearable electronic devices. Carbon nanotubes (CNTs) and graphene have many excellent properties that make them ideally suited for use in FEES devices. A brief definition of FEES devices is provided, followed by a detailed overview of various structural models for achieving different FEES devices. The latest research developments on the use of CNTs and graphene in FEES devices are summarized. Finally, future prospects and important research directions in the areas of CNT- and graphene-based flexible electrode synthesis and device integration are discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

3D Printed Photoresponsive Devices Based on Shape Memory Composites.

Science.gov (United States)

Yang, Hui; Leow, Wan Ru; Wang, Ting; Wang, Juan; Yu, Jiancan; He, Ke; Qi, Dianpeng; Wan, Changjin; Chen, Xiaodong

2017-09-01

Compared with traditional stimuli-responsive devices with simple planar or tubular geometries, 3D printed stimuli-responsive devices not only intimately meet the requirement of complicated shapes at macrolevel but also satisfy various conformation changes triggered by external stimuli at the microscopic scale. However, their development is limited by the lack of 3D printing functional materials. This paper demonstrates the 3D printing of photoresponsive shape memory devices through combining fused deposition modeling printing technology and photoresponsive shape memory composites based on shape memory polymers and carbon black with high photothermal conversion efficiency. External illumination triggers the shape recovery of 3D printed devices from the temporary shape to the original shape. The effect of materials thickness and light density on the shape memory behavior of 3D printed devices is quantified and calculated. Remarkably, sunlight also triggers the shape memory behavior of these 3D printed devices. This facile printing strategy would provide tremendous opportunities for the design and fabrication of biomimetic smart devices and soft robotics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Non-volatile memory devices with redox-active diruthenium molecular compound

International Nuclear Information System (INIS)

Pookpanratana, S; Zhu, H; Bittle, E G; Richter, C A; Li, Q; Hacker, C A; Natoli, S N; Ren, T

2016-01-01

Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al 2 O 3 /molecule/SiO 2 /Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. (paper)

Flexible Gallium Nitride for High-Performance, Strainable Radio-Frequency Devices.

Science.gov (United States)

Glavin, Nicholas R; Chabak, Kelson D; Heller, Eric R; Moore, Elizabeth A; Prusnick, Timothy A; Maruyama, Benji; Walker, Dennis E; Dorsey, Donald L; Paduano, Qing; Snure, Michael

2017-12-01

Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm 2 V -1 s -1 and sheet carrier density above 1.07 × 10 13 cm -2 . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bioinspired Graphene-Based Nanocomposites and Their Application in Flexible Energy Devices.

Science.gov (United States)

Wan, Sijie; Peng, Jingsong; Jiang, Lei; Cheng, Qunfeng

2016-09-01

Graphene is the strongest and stiffest material ever identified and the best electrical conductor known to date, making it an ideal candidate for constructing nanocomposites used in flexible energy devices. However, it remains a great challenge to assemble graphene nanosheets into macro-sized high-performance nanocomposites in practical applications of flexible energy devices using traditional approaches. Nacre, the gold standard for biomimicry, provides an excellent example and guideline for assembling two-dimensional nanosheets into high-performance nanocomposites. This review summarizes recent research on the bioinspired graphene-based nanocomposites (BGBNs), and discusses different bioinspired assembly strategies for constructing integrated high-strength and -toughness graphene-based nanocomposites through various synergistic effects. Fundamental properties of graphene-based nanocomposites, such as strength, toughness, and electrical conductivities, are highlighted. Applications of the BGBNs in flexible energy devices, as well as potential challenges, are addressed. Inspired from the past work done by the community a roadmap for the future of the BGBNs in flexible energy device applications is depicted. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of mechanical bending instability in flexible low-temperature-processed electrochromic display devices

Energy Technology Data Exchange (ETDEWEB)

Cheng, Chin-Pao; Chou, Chuan-Pu; Hsu, Che-Hsiang; Teng, Tun-Chien; Cheng, Chun-Hu, E-mail: chcheng@ntnu.edu.tw; Syu, Yu-Yang

2015-06-01

In this study, polyethylene naphthalate (PEN) was investigated as a flexible substrate because, compared with polyethylene terephthalate, it achieves a lower root mean square roughness and transmittance, which is favorable for reducing leakage from the bottom of flexible substrates. A flexible device structure composed of tungsten oxide/indium-doped tin oxide/PEN was used in an electrochromic (EC) test. The experimental results show that the flexible EC display device achieved a high transmittance difference of > 40% and color efficiency of 70.2 cm{sup 2}/C at 560 nm. The transmittance difference was degraded in the visible range after 200 cycles of continuous bending. Furthermore, compared with flat fresh devices, the WO{sub 3} device exhibited poor retention properties in a colored state after being subjected to longer bending cycles. - Highlights: • Flexible electrochromic device with endurance bending was demonstrated. • Interface defects or vacancies near the flexible substrate affect the self-bleaching behavior. • High color efficiency of 117.2 cm{sup 2}/coul at 700 nm wavelength is reached. • Interface defect centers lower the redox energy barrier which reduces the bleaching time.

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

KAUST Repository

Ghoneim, Mohamed T.; Zidan, Mohammed A.; Al-Nassar, Mohammed Y.; Hanna, Amir; Kosel, Jü rgen; Salama, Khaled N.; Hussain, Muhammad Mustafa

2015-01-01

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational

Fabrication of Flexible, Fully Organic, Degradable Energy Storage Devices Using Silk Proteins.

Science.gov (United States)

Pal, Ramendra K; Kundu, Subhas C; Yadavalli, Vamsi K

2018-03-21

Flexible and thin-film devices are of great interest in epidermal and implantable bioelectronics. The integration of energy storage and delivery devices such as supercapacitors (SCs) with properties such as flexibility, miniaturization, biocompatibility, and degradability are sought for such systems. Reducing e-waste and using sustainable materials and processes are additional desirable qualities. Herein, a silk protein-based biocompatible and degradable thin-film microSC (μSC) is reported. A protein carrier with the conducting polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and reduced graphene oxide dopant is used as a photopatternable biocomposite ink. Active electrodes are fabricated using photolithography under benign conditions, using only water as the solvent. These electrodes are printed on flexible protein sheets to form degradable, organic devices with a benign agarose-NaCl gel electrolyte. High capacitance, power density, cycling stability over 500 cycles, and the ability to power a light-emitting diode are shown. The device is flexible, can sustain cyclic mechanical stresses over 450 cycles, and retain capacitive properties over several days in liquid. Significantly, the μSCs are cytocompatible and completely degraded over the period of ∼1 month. By precise control of the device configuration, these silk protein-based, all-polymer organic devices can be designed to be tunably transient and provide viable alternatives for powering flexible and implantable bioelectronics.

An UV photochromic memory effect in proton-based WO3 electrochromic devices

International Nuclear Information System (INIS)

Zhang Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

2008-01-01

We report an UV photochromic memory effect on a standard proton-based WO 3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices

An UV photochromic memory effect in proton-based WO3 electrochromic devices

Science.gov (United States)

Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

2008-11-01

We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

Bioorganic nanodots for non-volatile memory devices

International Nuclear Information System (INIS)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

2013-01-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO 2 surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device

All-phosphorus flexible devices with non-collinear electrodes: a first principles study.

Science.gov (United States)

Li, Junjun; Ruan, Lufeng; Wu, Zewen; Zhang, Guiling; Wang, Yin

2018-03-07

With the continuous expansion of the family of two-dimensional (2D) materials, flexible electronics based on 2D materials have quickly emerged. Theoretically, predicting the transport properties of the flexible devices made up of 2D materials using first principles is of great importance. Using density functional theory combined with the non-equilibrium Green's function formalism, we calculated the transport properties of all-phosphorus flexible devices with non-collinear electrodes, and the results predicted that the device with compressed metallic phosphorene electrodes sandwiching a P-type semiconducting phosphorene shows a better and robust conducting behavior against the bending of the semiconducting region when the angle between the two electrodes is less than 45°, which indicates that this system is very promising for flexible electronics. The calculation of a quantum transport system with non-collinear electrodes demonstrated in this work will provide more interesting information on mesoscopic material systems and related devices.

Built-In Test Engine For Memory Test

OpenAIRE

McEvoy, Paul; Farrell, Ronan

2004-01-01

In this paper we will present an on-chip method for testing high performance memory devices, that occupies minimal area and retains full flexibility. This is achieved through microcode test instructions and the associated on-chip state machine. In addition, the proposed methodology will enable at-speed testing of memory devices. The relevancy of this work is placed in context with an introduction to memory testing and the techniques and algorithms generally used today.

Vibration control of a flexible rotor suspended by shape memory alloy wires

DEFF Research Database (Denmark)

Alves, Marco Túlio Santana; Steffen Jr., Valder; Castro dos Santos, Marina

2018-01-01

The present contribution is devoted to the study of the influence of shape memory alloys on the dynamic behavior of flexible rotors. In this sense, a suspension composed by pseudoelastic shape memory alloy wires that are connected to a rotor-bearing test rig was designed. To evaluate the performa...

Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

International Nuclear Information System (INIS)

Son, Dong-Ick; Kim, Ji-Hwan; Park, Dong-Hee; Choi, Won Kook; Li, Fushan; Ham, Jung Hun; Kim, Tae Whan

2008-01-01

The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles+ PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles+ PVK ]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices

Bioorganic nanodots for non-volatile memory devices

Energy Technology Data Exchange (ETDEWEB)

Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil, E-mail: rgil@post.tau.ac.il [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); StoreDot LTD, 16 Menahem Begin St., Ramat Gan (Israel); Roizin, Yakov [School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); TowerJazz, P.O. Box 619, Migdal HaEmek 23105 (Israel)

2013-12-01

In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

A chiral-based magnetic memory device without a permanent magnet.

Science.gov (United States)

Ben Dor, Oren; Yochelis, Shira; Mathew, Shinto P; Naaman, Ron; Paltiel, Yossi

2013-01-01

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

Electric-field-controlled interface dipole modulation for Si-based memory devices.

Science.gov (United States)

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

Science.gov (United States)

Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

2018-06-01

The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

Monitoring of Vital Signs with Flexible and Wearable Medical Devices.

Science.gov (United States)

Khan, Yasser; Ostfeld, Aminy E; Lochner, Claire M; Pierre, Adrien; Arias, Ana C

2016-06-01

Advances in wireless technologies, low-power electronics, the internet of things, and in the domain of connected health are driving innovations in wearable medical devices at a tremendous pace. Wearable sensor systems composed of flexible and stretchable materials have the potential to better interface to the human skin, whereas silicon-based electronics are extremely efficient in sensor data processing and transmission. Therefore, flexible and stretchable sensors combined with low-power silicon-based electronics are a viable and efficient approach for medical monitoring. Flexible medical devices designed for monitoring human vital signs, such as body temperature, heart rate, respiration rate, blood pressure, pulse oxygenation, and blood glucose have applications in both fitness monitoring and medical diagnostics. As a review of the latest development in flexible and wearable human vitals sensors, the essential components required for vitals sensors are outlined and discussed here, including the reported sensor systems, sensing mechanisms, sensor fabrication, power, and data processing requirements. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-cost rapid prototyping of flexible plastic paper based microfluidic devices

KAUST Repository

Fan, Yiqiang

2013-04-01

This research presents a novel rapid prototyping method for paper-based flexible microfluidic devices. The microchannels were fabricated using laser ablation on a piece of plastic paper (permanent paper), the dimensions of the microchannels was carefully studied for various laser powers and scanning speeds. After laser ablation of the microchannels on the plastic paper, a transparent poly (methyl methacrylate)(PMMA) film was thermally bonded to the plastic paper to enclose the channels. After connection of tubing, the device was ready to use. An example microfluidic device (droplet generator) was also fabricated using this technique. Due to the flexibility of the fabricated device, this technique can be used to fabricate 3D microfluidic devices. The fabrication process was simple and rapid without any requirement of cleanroom facilities. © 2013 IEEE.

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Science.gov (United States)

Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P.; Hedström, Svante; Saha, Surajit; Annamalai, Meenakshi; Sengupta, Debabrata; Patra, Abhijeet; Ghosh, Siddhartha; Jani, Hariom; Sarkar, Soumya; Motapothula, Mallikarjuna Rao; Nijhuis, Christian A.; Martin, Jens; Goswami, Sreebrata; Batista, Victor S.; Venkatesan, T.

2017-12-01

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (106 s) and scalability (down to ~60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

Fast, Capacious Disk Memory Device

Science.gov (United States)

Muller, Ronald M.

1990-01-01

Device for recording digital data on, and playing back data from, memory disks has high recording or playback rate and utilizes available recording area more fully. Two disks, each with own reading/writing head, used to record data at same time. Head on disk A operates on one of tracks numbered from outside in; head on disk B operates on track of same number in sequence from inside out. Underlying concept of device applicable to magnetic or optical disks.

Flexible heartbeat sensor for wearable device.

Science.gov (United States)

Kwak, Yeon Hwa; Kim, Wonhyo; Park, Kwang Bum; Kim, Kunnyun; Seo, Sungkyu

2017-08-15

We demonstrate a flexible strain-gauge sensor and its use in a wearable application for heart rate detection. This polymer-based strain-gauge sensor was fabricated using a double-sided fabrication method with polymer and metal, i.e., polyimide and nickel-chrome. The fabrication process for this strain-gauge sensor is compatible with the conventional flexible printed circuit board (FPCB) processes facilitating its commercialization. The fabricated sensor showed a linear relation for an applied normal force of more than 930 kPa, with a minimum detectable force of 6.25Pa. This sensor can also linearly detect a bending radius from 5mm to 100mm. It is a thin, flexible, compact, and inexpensive (for mass production) heart rate detection sensor that is highly sensitive compared to the established optical photoplethysmography (PPG) sensors. It can detect not only the timing of heart pulsation, but also the amplitude or shape of the pulse signal. The proposed strain-gauge sensor can be applicable to various applications for smart devices requiring heartbeat detection. Copyright © 2017 Elsevier B.V. All rights reserved.

A stacked memory device on logic 3D technology for ultra-high-density data storage

International Nuclear Information System (INIS)

Kim, Jiyoung; Hong, Augustin J; Kim, Sung Min; Shin, Kyeong-Sik; Song, Emil B; Hwang, Yongha; Xiu, Faxian; Galatsis, Kosmas; Chui, Chi On; Candler, Rob N; Wang, Kang L; Choi, Siyoung; Moon, Joo-Tae

2011-01-01

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.

A stacked memory device on logic 3D technology for ultra-high-density data storage

Energy Technology Data Exchange (ETDEWEB)

Kim, Jiyoung; Hong, Augustin J; Kim, Sung Min; Shin, Kyeong-Sik; Song, Emil B; Hwang, Yongha; Xiu, Faxian; Galatsis, Kosmas; Chui, Chi On; Candler, Rob N; Wang, Kang L [Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095 (United States); Choi, Siyoung; Moon, Joo-Tae, E-mail: hbt100@ee.ucla.edu [Advanced Technology Development Team and Process Development Team, Memory R and D Center, Samsung Electronics Co. Ltd (Korea, Republic of)

2011-06-24

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

Science.gov (United States)

Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

2010-07-27

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

Vacuum Deposited Organic Light Emitting Devices on Flexible Substrates

National Research Council Canada - National Science Library

Forrest, Stephen

2002-01-01

The objective of this eight year program was to demonstrate both passive and active matrix, flexible, small scale displays based on small molecular weight organic light emitting device (OLED) technology...

Characterizations of MoTiO5 flash memory devices with post-annealing

International Nuclear Information System (INIS)

Kao, Chyuan Haur; Chen, Hsiang; Chen, Su Zhien; Chen, Yu Jie; Chu, Yu Cheng

2014-01-01

In this study, high-K MoTiO 5 dielectrics were applied as charge trapping layers in fabricated metal-oxide-high-K MoTiO 5 -oxide-Si-type memory devices. Among the applied MoTiO 5 trapping layer treatment conditions, annealing at 900 °C yielded devices that exhibited superior memory performance, such as a larger memory window and faster programming/erasing speed. Multiple material analyses, namely X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, confirmed that annealing at 900 °C can improve the material quality as a result of crystallization. The fabricated MoTiO 5 -based memory devices show potential for future commercial memory device applications. - Highlights: • MoTiO5-based flash memories have been fabricated. • MoTiO5 trapping layers could be formed by co-sputtering. • MoTiO5 layers with annealing exhibited a good memory performance. • Multiple material analyses confirm that annealing enhanced crystallization

Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

International Nuclear Information System (INIS)

Yang, Y.

2016-01-01

Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

Science.gov (United States)

Shahrjerdi, Davood; Bedell, Stephen W

2013-01-09

In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

Resistively heated shape memory polymer device

Energy Technology Data Exchange (ETDEWEB)

Marion, III, John E.; Bearinger, Jane P.; Wilson, Thomas S.; Maitland, Duncan J.

2017-09-05

A resistively heated shape memory polymer device is made by providing a rod, sheet or substrate that includes a resistive medium. The rod, sheet or substrate is coated with a first shape memory polymer providing a coated intermediate unit. The coated intermediate unit is in turn coated with a conductive material providing a second intermediate unit. The second coated intermediate unit is in turn coated with an outer shape memory polymer. The rod, sheet or substrate is exposed and an electrical lead is attached to the rod, sheet or substrate. The conductive material is exposed and an electrical lead is attached to the conductive material.

Resistively heated shape memory polymer device

Energy Technology Data Exchange (ETDEWEB)

Marion, III, John E.; Bearinger, Jane P.; Wilson, Thomas S.; Maitland, Duncan J.

2016-10-25

A resistively heated shape memory polymer device is made by providing a rod, sheet or substrate that includes a resistive medium. The rod, sheet or substrate is coated with a first shape memory polymer providing a coated intermediate unit. The coated intermediate unit is in turn coated with a conductive material providing a second intermediate unit. The second coated intermediate unit is in turn coated with an outer shape memory polymer. The rod, sheet or substrate is exposed and an electrical lead is attached to the rod, sheet or substrate. The conductive material is exposed and an electrical lead is attached to the conductive material.

A Flexible Microcontroller-Based Data Acquisition Device

Directory of Open Access Journals (Sweden)

Darko Hercog

2014-06-01

Full Text Available This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC. The presented embedded DAQ device contains a preloaded program (firmware that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID. This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI, can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

A flexible microcontroller-based data acquisition device.

Science.gov (United States)

Hercog, Darko; Gergič, Bojan

2014-06-02

This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

A 3D Printed Implantable Device for Voiding the Bladder Using Shape Memory Alloy (SMA) Actuators.

Science.gov (United States)

Hassani, Faezeh Arab; Peh, Wendy Yen Xian; Gammad, Gil Gerald Lasam; Mogan, Roshini Priya; Ng, Tze Kiat; Kuo, Tricia Li Chuen; Ng, Lay Guat; Luu, Percy; Yen, Shih-Cheng; Lee, Chengkuo

2017-11-01

Underactive bladder or detrusor underactivity (DU) is defined as a reduction of contraction strength or duration of the bladder wall. Despite the serious healthcare implications of DU, there are limited solutions for affected individuals. A flexible 3D printed implantable device driven by shape memory alloys (SMA) actuators is presented here for the first time to physically contract the bladder to restore voluntary control of the bladder for individuals suffering from DU. This approach is used initially in benchtop experiments with a rubber balloon acting as a model for the rat bladder to verify its potential for voiding, and that the operating temperatures are safe for the eventual implantation of the device in a rat. The device is then implanted and tested on an anesthetized rat, and a voiding volume of more than 8% is successfully achieved for the SMA-based device without any surgical intervention or drug injection to relax the external sphincter.

Low-cost high-quality crystalline germanium based flexible devices

KAUST Repository

Nassar, Joanna M.

2014-06-16

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

Low-cost high-quality crystalline germanium based flexible devices

KAUST Repository

Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

A graphene integrated highly transparent resistive switching memory device

Science.gov (United States)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

Science.gov (United States)

Gogurla, Narendar; Kundu, Subhas C.; Ray, Samit K.

2017-04-01

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼105 as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

Impacts of Co doping on ZnO transparent switching memory device characteristics

Energy Technology Data Exchange (ETDEWEB)

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Prasad, Om Kumar [Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Panda, Debashis [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Lin, Chun-An; Tsai, Tsung-Ling; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-05-02

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

Roll-to-roll printed resistive WORM memory on a flexible substrate

Science.gov (United States)

Leppäniemi, Jaakko; Mattila, Tomi; Kololuoma, Terho; Suhonen, Mika; Alastalo, Ari

2012-08-01

The fabrication process and the operation characteristics of a fully roll-to-roll printed resistive write-once-read-many memory on a flexible substrate are presented. The low-voltage (memories from a high resistivity ‘0’ state to a low resistivity ‘1’ state is based on the rapid electrical sintering of bits containing silver nanoparticles. The bit ink is formulated by mixing two commercially available silver nanoparticle inks in order to tune the initial square resistance of the bits and to create a self-organized network of percolating paths. The electrical performance of the memories, including read and write characteristics, is described and the long-term stability of the less stable ‘0’ state is studied in different environmental conditions. The memories can find use in low-cost mass printing applications.

Solid state MEMS devices on flexible and semi-transparent silicon (100) platform

KAUST Repository

Ahmed, Sally; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

We report fabrication of MEMS thermal actuators on flexible and semi-transparent silicon fabric released from bulk silicon (100). We fabricated the devices first and then released the top portion of the silicon (≈ 19 μm) which is flexible and semi-transparent. We also performed chemical mechanical polishing to reuse the remaining wafer. A tested thermal actuator with 3 μm wide 240 μm hot arm and 10 μm wide 185 μm long cold arm deflected by 1.7 μm at 1 V. The fabricated thermal actuators exhibit similar performance before and after bending. We believe the demonstrated process will expand the horizon of flexible electronics into MEMS world devices. © 2014 IEEE.

Organic nonvolatile memory devices with charge trapping multilayer graphene film

International Nuclear Information System (INIS)

Ji, Yongsung; Choe, Minhyeok; Cho, Byungjin; Song, Sunghoon; Yoon, Jongwon; Ko, Heung Cho; Lee, Takhee

2012-01-01

We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10 6 ) and a long retention time (over 10 4 s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current–voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism. (paper)

Manufacturing and testing flexible microfluidic devices with optical and electrical detection mechanisms

NARCIS (Netherlands)

Ivan, M.G.; Vivet, F.; Meinders, E.R.

2010-01-01

Flexible microfluidic devices made of poly(dimethylsiloxane) (PDMS) were manufactured by soft lithography, and tested in detection of ionic species using optical absorption spectroscopy and electrical measurements. PDMS was chosen due to its flexibility and ease of surface modification by exposure

A novel needle-type sampling device for flexible ultrathin bronchoscopy

International Nuclear Information System (INIS)

Suda, Yuji; Hayashi, Katsutoshi; Shindoh, Yuriko; Iijima, Hideya; Tanaka, Akiko

2008-01-01

Diagnosis of suspected cancer in the periphery of the lung is difficult. A flexible ultrathin bronchoscope has been developed for the diagnosis of peripherally located pulmonary lesions that cannot be reached with the sampling devices for standard flexible bronchoscopes. The diagnostic yield with forceps and a brush for ultrathin bronchoscopes, however, is not adequate, especially when a lesion is not exposed to the bronchial lumen. We have thus developed a novel needle-type sampling device and tested its yield in transbronchial cytology. The device consists of an elongated dental H-file (0.4 mm in diameter and 110 cm in length), a housing sheath (1.0 mm in outer diameter), and a novel handle, which enables rapid out-and-in motion of the needle. Ten consecutive patients with a peripheral pulmonary lesion who had an indication for diagnostic procedure with a flexible ultrathin bronchoscope were enrolled. The optimal bronchial route to the lesion was analyzed with virtual bronchoscopy in a data set obtained with high-resolution computed tomography, and a novel bronchial route labeling system (prior-ridge-based relative orientation nomenclature) was employed to guide insertion of the bronchoscope. Sampling with the novel needle was performed prior to use of the forceps and brush under conventional fluoroscopy. In all the cases, sampling with the needle was successful and the amount of the specimen was sufficient for cytology. Our novel sampling system with flexible ultrathin bronchoscopes may contribute to accurate and minimally invasive diagnosis of peripheral pulmonary lesions. (author)

Enhancing light emission in flexible AC electroluminescent devices by tetrapod-like zinc oxide whiskers.

Science.gov (United States)

Wen, Li; Liu, Nishuang; Wang, Siliang; Zhang, Hui; Zhao, Wanqiu; Yang, Zhichun; Wang, Yumei; Su, Jun; Li, Luying; Long, Fei; Zou, Zhengguang; Gao, Yihua

2016-10-03

Flexible alternating current electroluminescent devices (ACEL) are more and more popular and widely used in liquid-crystal display back-lighting, large-scale architectural and decorative lighting due to their uniform light emission, low power consumption and high resolution. However, presently how to acquire high brightness under a certain voltage are confronted with challenges. Here, we demonstrate an electroluminescence (EL) enhancing strategy that tetrapod-like ZnO whiskers (T-ZnOw) are added into the bottom electrode of carbon nanotubes (CNTs) instead of phosphor layer in flexible ACEL devices emitting blue, green and orange lights, and the brightness is greatly enhanced due to the coupling between the T-ZnOw and ZnS phosphor dispersed in the flexible polydimethylsiloxane (PDMS) layer. This strategy provides a new routine for the development of high performance, flexible and large-area ACEL devices.

Ferroelectric-gate field effect transistor memories device physics and applications

CERN Document Server

Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

2016-01-01

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

Design of Large Area PLEDs on Flexible Substrates: Highly Efficient Flexible Devices Using a Statistical Copolymer of Oxadiazole-Containing PPV

National Research Council Canada - National Science Library

Christian, Hermona Y; Vaidyanathan, Subbu; Ko, Changhee; Galvin, Mary E; Beyer, Rick

2004-01-01

With polymers as the active layer on a plastic substrate, construction of flexible devices is possible, although the use of calcium cathodes places stringent requirements on the encapsulation of the device...

Neural correlates of reappraisal considering working memory capacity and cognitive flexibility.

Science.gov (United States)

Zaehringer, Jenny; Falquez, Rosalux; Schubert, Anna-Lena; Nees, Frauke; Barnow, Sven

2018-01-09

Cognitive reappraisal of emotion is strongly related to long-term mental health. Therefore, the exploration of underlying cognitive and neural mechanisms has become an essential focus of research. Considering that reappraisal and executive functions rely on a similar brain network, the question arises whether behavioral differences in executive functions modulate neural activity during reappraisal. Using functional neuroimaging, the present study aimed to analyze the role of working memory capacity (WMC) and cognitive flexibility in brain activity during down-regulation of negative emotions by reappraisal in N = 20 healthy participants. Results suggests that WMC and cognitive flexibility were negatively correlated with prefrontal activity during reappraisal condition. Here, results also revealed a negative correlation between cognitive flexibility and amygdala activation. These findings provide first hints that (1) individuals with lower WMC and lower cognitive flexibility might need more higher-order cognitive neural resources in order to down-regulate negative emotions and (2) cognitive flexibility relates to emotional reactivity during reappraisal.

Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

Directory of Open Access Journals (Sweden)

Fu-Chien Chiu

2013-01-01

Full Text Available Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106 switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

Flexible Graphene-based Energy Storage Devices for Space Application Project

Science.gov (United States)

Calle, Carlos I.

2014-01-01

Develop prototype graphene-based reversible energy storage devices that are flexible, thin, lightweight, durable, and that can be easily attached to spacesuits, rovers, landers, and equipment used in space.

Three-terminal resistive switching memory in a transparent vertical-configuration device

International Nuclear Information System (INIS)

Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

Roll-to-roll printed resistive WORM memory on a flexible substrate

International Nuclear Information System (INIS)

Leppäniemi, Jaakko; Mattila, Tomi; Suhonen, Mika; Alastalo, Ari; Kololuoma, Terho

2012-01-01

The fabrication process and the operation characteristics of a fully roll-to-roll printed resistive write-once-read-many memory on a flexible substrate are presented. The low-voltage (<10 V) write operation of the memories from a high resistivity ‘0’ state to a low resistivity ‘1’ state is based on the rapid electrical sintering of bits containing silver nanoparticles. The bit ink is formulated by mixing two commercially available silver nanoparticle inks in order to tune the initial square resistance of the bits and to create a self-organized network of percolating paths. The electrical performance of the memories, including read and write characteristics, is described and the long-term stability of the less stable ‘0’ state is studied in different environmental conditions. The memories can find use in low-cost mass printing applications. (paper)

Stress-induced state transitions in flexible liquid-crystal devices

International Nuclear Information System (INIS)

Ho, I-Lin; Chang, Yia-Chung

2012-01-01

This work studies the stress-strain dynamics for the transient optoelectronic characteristics of flexible liquid-crystal (LC) devices. Due to the fast response of LC directors, the configuration of the LC is assumed to be in quasi-equilibrium during the process of elastic deformations of the flexible structures. The LC medium hence can be treated effectively as a thin-film layer and can approximately follow the strain-stress mechanism in the solids. Relevant theoretical algorithms are studied in this work, and numerical results present the stress-induced state transitions in the π cell.

Vibration Control of a Flexible Rotor Using Shape Memory Alloy Wires

DEFF Research Database (Denmark)

Alves, Marco Túlio Santana; Enemark, Søren; Steffen Jr, Valdar

2015-01-01

In the present contribution, a theoretical model of a test rig containing a flexible rotor is simulated considering pseudoelastic SMA (Shape Memory Alloy) wires connected to a bearing in order to dissipate energy and consequently reduce vibration. SMAs have characteristics of shape memory...... of rotor and SMA wires are coupled. The chosen constitutive model that governs the SMA behaviour is a modified version of the model by Brinson for the one-dimensional case. Both transient and steady-state tests arenumerically simulated. The first one, a run-up test, is performed only at room temperature...

Highly Flexible and Efficient Solar Steam Generation Device.

Science.gov (United States)

Chen, Chaoji; Li, Yiju; Song, Jianwei; Yang, Zhi; Kuang, Yudi; Hitz, Emily; Jia, Chao; Gong, Amy; Jiang, Feng; Zhu, J Y; Yang, Bao; Xie, Jia; Hu, Liangbing

2017-08-01

Solar steam generation with subsequent steam recondensation has been regarded as one of the most promising techniques to utilize the abundant solar energy and sea water or other unpurified water through water purification, desalination, and distillation. Although tremendous efforts have been dedicated to developing high-efficiency solar steam generation devices, challenges remain in terms of the relatively low efficiency, complicated fabrications, high cost, and inability to scale up. Here, inspired by the water transpiration behavior of trees, the use of carbon nanotube (CNT)-modified flexible wood membrane (F-Wood/CNTs) is demonstrated as a flexible, portable, recyclable, and efficient solar steam generation device for low-cost and scalable solar steam generation applications. Benefitting from the unique structural merits of the F-Wood/CNTs membrane-a black CNT-coated hair-like surface with excellent light absorbability, wood matrix with low thermal conductivity, hierarchical micro- and nanochannels for water pumping and escaping, solar steam generation device based on the F-Wood/CNTs membrane demonstrates a high efficiency of 81% at 10 kW cm -2 , representing one of the highest values ever-reported. The nature-inspired design concept in this study is straightforward and easily scalable, representing one of the most promising solutions for renewable and portable solar energy generation and other related phase-change applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure

International Nuclear Information System (INIS)

Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

2009-01-01

The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 μm 2 to 200 x 200 nm 2 . From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I ON /I OFF ∼10 4 ), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

Feature-specific encoding flexibility in visual working memory.

Directory of Open Access Journals (Sweden)

Aki Kondo

Full Text Available The current study examined selective encoding in visual working memory by systematically investigating interference from task-irrelevant features. The stimuli were objects defined by three features (color, shape, and location, and during a delay period, any of the features could switch between two objects. Additionally, single- and whole-probe trials were randomized within experimental blocks to investigate effects of memory retrieval. A series of relevant-feature switch detection tasks, where one feature was task-irrelevant, showed that interference from the task-irrelevant feature was only observed in the color-shape task, suggesting that color and shape information could be successfully filtered out, but location information could not, even when location was a task-irrelevant feature. Therefore, although location information is added to object representations independent of task demands in a relatively automatic manner, other features (e.g., color, shape can be flexibly added to object representations.

Feature-specific encoding flexibility in visual working memory.

Science.gov (United States)

Kondo, Aki; Saiki, Jun

2012-01-01

The current study examined selective encoding in visual working memory by systematically investigating interference from task-irrelevant features. The stimuli were objects defined by three features (color, shape, and location), and during a delay period, any of the features could switch between two objects. Additionally, single- and whole-probe trials were randomized within experimental blocks to investigate effects of memory retrieval. A series of relevant-feature switch detection tasks, where one feature was task-irrelevant, showed that interference from the task-irrelevant feature was only observed in the color-shape task, suggesting that color and shape information could be successfully filtered out, but location information could not, even when location was a task-irrelevant feature. Therefore, although location information is added to object representations independent of task demands in a relatively automatic manner, other features (e.g., color, shape) can be flexibly added to object representations.

Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

Science.gov (United States)

Seung, Hyun-Min; Kwon, Kyoung-Cheol; Lee, Gon-Sub; Park, Jea-Gun

2014-10-01

Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 105 s with a memory margin of 9.2 × 105, program/erase endurance cycles of >102 with a memory margin of 8.4 × 105, and bending-fatigue-free cycles of ˜1 × 103 with a memory margin (Ion/Ioff) of 3.3 × 105.

Terrestrial neutron-induced soft errors in advanced memory devices

CERN Document Server

Nakamura, Takashi; Ibe, Eishi; Yahagi, Yasuo; Kameyama, Hideaki

2008-01-01

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features. Sample Chapter(s). Chapter 1: Introduction (238 KB). Table A.30 mentioned in Appendix A.6 on

A study on ship impacting a flexible crashworthy device for protecting bridge pier

Directory of Open Access Journals (Sweden)

Yang Liming

2015-01-01

Full Text Available As the accident of a vessel impacting a bridge pier will cause serious disaster, such as destroyed bridge, sinking ship and polluting environment, the technology and method to protect bridge pier from ship collision have been widely investigated recently. Due to the huge kinetic energy of large-tonnage ship and the short time duration in the collision, the studies involve impact mechanics. A developed flexible crashworthy device has been developed to protect bridges, which consists of an outer steel-periphery, an inner steel-periphery and the rubber coating SWRCs(soft elements installed between them. When the SWRC crashworthy device is installed, the collision duration under low impact force is prolonged due to its high compliance, which results in the ship having enough time to turn its navigation direction and most of the remainder kinetic energy being carried off by the turned away ship. Consequently, both impact forces on the ship and on the bridge pier decrease markedly. This is the key reason as to why the SWRC crashworthy device can avoid the destruction of both the bridge and the ship. Based on our results of theoretical studies and numerical simulations, the present paper will propose an experiment-adopted a real ship to impact a flexible crashworthy device. The collision test has been performed 12 times with different speed, carrying capacity, and impact angle of the ship. After the experiments, the ship, flexible crashworthy device and the pier are not damaged. The experiments show that the flexible crashworthy device can turn away the impact ship, so that the ship moves along the outer part of the device, which reduces the ship impact force on the bridge pier obviously. It not only protects bridges but also avoids the damage to ships.

Memory-assisted measurement-device-independent quantum key distribution

Science.gov (United States)

Panayi, Christiana; Razavi, Mohsen; Ma, Xiongfeng; Lütkenhaus, Norbert

2014-04-01

A protocol with the potential of beating the existing distance records for conventional quantum key distribution (QKD) systems is proposed. It borrows ideas from quantum repeaters by using memories in the middle of the link, and that of measurement-device-independent QKD, which only requires optical source equipment at the user's end. For certain memories with short access times, our scheme allows a higher repetition rate than that of quantum repeaters with single-mode memories, thereby requiring lower coherence times. By accounting for various sources of nonideality, such as memory decoherence, dark counts, misalignment errors, and background noise, as well as timing issues with memories, we develop a mathematical framework within which we can compare QKD systems with and without memories. In particular, we show that with the state-of-the-art technology for quantum memories, it is potentially possible to devise memory-assisted QKD systems that, at certain distances of practical interest, outperform current QKD implementations.

Memory-assisted measurement-device-independent quantum key distribution

International Nuclear Information System (INIS)

Panayi, Christiana; Razavi, Mohsen; Ma, Xiongfeng; Lütkenhaus, Norbert

2014-01-01

A protocol with the potential of beating the existing distance records for conventional quantum key distribution (QKD) systems is proposed. It borrows ideas from quantum repeaters by using memories in the middle of the link, and that of measurement-device-independent QKD, which only requires optical source equipment at the user's end. For certain memories with short access times, our scheme allows a higher repetition rate than that of quantum repeaters with single-mode memories, thereby requiring lower coherence times. By accounting for various sources of nonideality, such as memory decoherence, dark counts, misalignment errors, and background noise, as well as timing issues with memories, we develop a mathematical framework within which we can compare QKD systems with and without memories. In particular, we show that with the state-of-the-art technology for quantum memories, it is potentially possible to devise memory-assisted QKD systems that, at certain distances of practical interest, outperform current QKD implementations. (paper)

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

Science.gov (United States)

Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

2017-10-01

Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

Printing-based fabrication method using sacrificial paper substrates for flexible and wearable microfluidic devices

International Nuclear Information System (INIS)

Chung, Daehan; Gray, Bonnie L

2017-01-01

We present a simple, fast, and inexpensive new printing-based fabrication process for flexible and wearable microfluidic channels and devices. Microfluidic devices are fabricated on textiles (fabric) for applications in clothing-based wearable microfluidic sensors and systems. The wearable and flexible microfluidic devices are comprised of water-insoluable screen-printable plastisol polymer. Sheets of paper are used as sacrificial substrates for multiple layers of polymer on the fabric’s surface. Microfluidic devices can be made within a short time using simple processes and inexpensive equipment that includes a laser cutter and a thermal laminator. The fabrication process is characterized to demonstrate control of microfluidic channel thickness and width. Film thickness smaller than 100 micrometers and lateral dimensions smaller than 150 micrometers are demonstrated. A flexible microfluidic mixer is also developed on fabric and successfully tested on both flat and curved surfaces at volumetric flow rates ranging from 5.5–46 ml min −1 . (paper)

Printing-based fabrication method using sacrificial paper substrates for flexible and wearable microfluidic devices

Science.gov (United States)

Chung, Daehan; Gray, Bonnie L.

2017-11-01

We present a simple, fast, and inexpensive new printing-based fabrication process for flexible and wearable microfluidic channels and devices. Microfluidic devices are fabricated on textiles (fabric) for applications in clothing-based wearable microfluidic sensors and systems. The wearable and flexible microfluidic devices are comprised of water-insoluable screen-printable plastisol polymer. Sheets of paper are used as sacrificial substrates for multiple layers of polymer on the fabric’s surface. Microfluidic devices can be made within a short time using simple processes and inexpensive equipment that includes a laser cutter and a thermal laminator. The fabrication process is characterized to demonstrate control of microfluidic channel thickness and width. Film thickness smaller than 100 micrometers and lateral dimensions smaller than 150 micrometers are demonstrated. A flexible microfluidic mixer is also developed on fabric and successfully tested on both flat and curved surfaces at volumetric flow rates ranging from 5.5-46 ml min-1.

Combating Memory Corruption Attacks On Scada Devices

Science.gov (United States)

Bellettini, Carlo; Rrushi, Julian

Memory corruption attacks on SCADA devices can cause significant disruptions to control systems and the industrial processes they operate. However, despite the presence of numerous memory corruption vulnerabilities, few, if any, techniques have been proposed for addressing the vulnerabilities or for combating memory corruption attacks. This paper describes a technique for defending against memory corruption attacks by enforcing logical boundaries between potentially hostile data and safe data in protected processes. The technique encrypts all input data using random keys; the encrypted data is stored in main memory and is decrypted according to the principle of least privilege just before it is processed by the CPU. The defensive technique affects the precision with which attackers can corrupt control data and pure data, protecting against code injection and arc injection attacks, and alleviating problems posed by the incomparability of mitigation techniques. An experimental evaluation involving the popular Modbus protocol demonstrates the feasibility and efficiency of the defensive technique.

Soluble dendrimers europium(III) β-diketonate complex for organic memory devices

International Nuclear Information System (INIS)

Wang Binbin; Fang Junfeng; Li Bin; You Han; Ma Dongge; Hong Ziruo; Li Wenlian; Su Zhongmin

2008-01-01

We report the synthesis of a soluble dendrimers europium(III) complex, tris(dibenzoylmethanato)(1,3,5-tris[2-(2'-pyridyl) benzimidazoly]methylbenzene)-europium(III), and its application in organic electrical bistable memory device. Excellent stability that ensured more than 10 6 write-read-erase-reread cycles has been performed in ambient conditions without current-induced degradation. High-density, low-cost memory, good film-firming property, fascinating thermal and morphological stability allow the application of the dendrimers europium(III) complex as an active medium in non-volatile memory devices

Memory of occasional events in rats: individual episodic memory profiles, flexibility, and neural substrate.

Science.gov (United States)

Veyrac, Alexandra; Allerborn, Marina; Gros, Alexandra; Michon, Frederic; Raguet, Louise; Kenney, Jana; Godinot, Florette; Thevenet, Marc; Garcia, Samuel; Messaoudi, Belkacem; Laroche, Serge; Ravel, Nadine

2015-05-13

In search for the mechanisms underlying complex forms of human memory, such as episodic recollection, a primary challenge is to develop adequate animal models amenable to neurobiological investigation. Here, we proposed a novel framework and paradigm that provides means to quantitatively evaluate the ability of rats to form and recollect a combined knowledge of what happened, where it happened, and when or in which context it happened (referred to as episodic-like memory) after a few specific episodes in situations as close as possible to a paradigm we recently developed to study episodic memory in humans. In this task, rats have to remember two odor-drink associations (what happened) encountered in distinct locations (where it happened) within two different multisensory enriched environments (in which context/occasion it happened), each characterized by a particular combination of odors and places. By analyzing licking behavior on each drinking port, we characterized quantitatively individual recollection profiles and showed that rats are able to incidentally form and recollect an accurate, long-term integrated episodic-like memory that can last ≥ 24 d after limited exposure to the episodes. Placing rats in a contextually challenging recollection situation at recall reveals the ability for flexible use of episodic memory as described in humans. We further report that reversible inactivation of the dorsal hippocampus during recall disrupts the animal's capacity to recollect the complete episodic memory. Cellular imaging of c-Fos and Zif268 brain activation reveals that episodic memory recollection recruits a specific, distributed network of hippocampal-prefrontal cortex structures that correlates with the accuracy of the integrated recollection performance. Copyright © 2015 the authors 0270-6474/15/337575-12$15.00/0.

Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

International Nuclear Information System (INIS)

Aïssa, B.; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

2015-01-01

We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10 4 and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10 4  s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices

Hybrid superconducting-magnetic memory device using competing order parameters.

Science.gov (United States)

Baek, Burm; Rippard, William H; Benz, Samuel P; Russek, Stephen E; Dresselhaus, Paul D

2014-05-28

In a hybrid superconducting-magnetic device, two order parameters compete, with one type of order suppressing the other. Recent interest in ultra-low-power, high-density cryogenic memories has spurred new efforts to simultaneously exploit superconducting and magnetic properties so as to create novel switching elements having these two competing orders. Here we describe a reconfigurable two-layer magnetic spin valve integrated within a Josephson junction. Our measurements separate the suppression in the superconducting coupling due to the exchange field in the magnetic layers, which causes depairing of the supercurrent, from the suppression due to the stray magnetic field. The exchange field suppression of the superconducting order parameter is a tunable and switchable behaviour that is also scalable to nanometer device dimensions. These devices demonstrate non-volatile, size-independent switching of Josephson coupling, in magnitude as well as phase, and they may enable practical nanoscale superconducting memory devices.

A new DRAM-type memory devices based on polymethacrylate containing pendant 2-methylbenzothiazole

International Nuclear Information System (INIS)

Wang Dong; Li Hua; Li Najun; Zhao Ying; Zhou Qianhao; Xu Qingfeng; Lu Jianmei; Wang Lihua

2012-01-01

Graphical abstract: The devices fabricated with 75 nm and 45 nm thick pBVMA films were both found to exhibit DRAM type memory behaviors, which may indicate that the Al nanoparticles had no penetration into the thin film during the vacuum-deposition process. Highlights: ► The side-functional moieties of pBVMA regularly arranged in film state. ► The device exhibits volatile memory behavior with an ON/OFF current ratio up to 10 5 . ► The film thickness has nothing to do with the device's memory behavior. ► Physical theoretical models and molecular simulation supported the memory mechanism. - Abstract: A polymethacrylate containing pendant 2-methylbenzothiazole (pBVMA) with good thermal stability was synthesized by free radical polymerization. The devices based on pBVMA possess a sandwich structure comprising bottom indium-tin oxide (ITO) electrode and top Al electrode. The as-fabricated device exhibits the dynamic random access memory (DRAM) behavior with an ON/OFF current ratio up to 10 5 and can endure 10 8 read cycles under −1 V pulse voltage. The effect of the film thickness on the device performance was investigated and the devices fabricated with 75 nm and 45 nm thick pBVMA films were both found to exhibit DRAM type memory behaviors, which may indicate that the Al nanoparticles had no penetration into the thin film during the vacuum-deposition process. The molecular simulation and physical theoretical models were analyzed and the mechanism of the DRAM performance may be attributed to the weak electron withdrawing ability of the molecule.

Highly flexible peeled-off silver nanowire transparent anode using in organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Duan, Ya-Hui; Duan, Yu, E-mail: duanyu@jlu.edu.cn; Wang, Xiao; Yang, Dan; Yang, Yong-Qiang; Chen, Ping; Sun, Feng-Bo; Xue, Kai-Wen; Zhao, Yi

2015-10-01

Graphical abstract: - Highlights: • An ultra-smooth AgNW film on a flexible photopolymer substrate has been fabricated. • The AgNW film has a low sheet resistance with high transparency and flexibility. • OLEDs based on AgNW:NOA63 substrate can be bent at a radius of curvature of 2 mm. - Abstract: Materials to replace indium tin oxide (ITO) for high transmittance and electrical conductivity are urgently needed. In this paper, we adopted a silver nanowire (AgNW)-photopolymer (NOA63) film as a new platform for flexible optoelectronic devices. This design combined a transparent electrode and a flexible substrate. We utilized this application to obtain flexible organic light-emitting devices (FOLEDs). A peel-off process combined with a spin-coating process created an ultra-smooth silver nanowire anode on a photopolymer substrate. The performance of the device was achieved via the perfect morphology of the AgNW anode, the optimal 5 mg/ml concentration of AgNW solution, and the 45.7 Ω/□ sheet resistance of the AgNW film. The maximum current efficiency of the FOLED is 13 cd/A with stable mechanical flexibility even when bent to a radius of curvature of 2 mm. The outstanding performance of the FOLED with peeled off AgNW anode shows that this approach is a promising alternative to ITO for FOLEDs.

Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

Science.gov (United States)

Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

2015-05-01

A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

Noise-assisted morphing of memory and logic function

International Nuclear Information System (INIS)

Kohar, Vivek; Sinha, Sudeshna

2012-01-01

We demonstrate how noise allows a bistable system to behave as a memory device, as well as a logic gate. Namely, in some optimal range of noise, the system can operate flexibly, both as a NAND/AND gate and a Set–Reset latch, by varying an asymmetrizing bias. Thus we show how this system implements memory, even for sub-threshold input signals, using noise constructively to store information. This can lead to the development of reconfigurable devices, that can switch efficiently between memory tasks and logic operations. -- Highlights: ► We consider a nonlinear system in a noisy environment. ► We show that the system can function as a robust memory element. ► Further, the response of the system can be easily morphed from memory to logic operations. ► Such systems can potentially act as building blocks of “smart” computing devices.

Silicon nano crystal-based non-volatile memory devices

International Nuclear Information System (INIS)

Ng, C.Y.; Chen, T.P.; Sreeduth, D.; Chen, Q.; Ding, L.; Du, A.

2006-01-01

In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼ 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10 5 W/E cycles even at the high operation temperature of 85 deg. C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼ 0.3 V (or ∼ 20% of charge lose after 10 years) is achieved. However, ∼ 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide)

Discovering Authentication Credentials in Volatile Memory of Android Mobile Devices

OpenAIRE

Apostolopoulos , Dimitris; Marinakis , Giannis; Ntantogian , Christoforos; Xenakis , Christos

2013-01-01

Part 5: Adoption Issues in e/m-Services; International audience; This paper investigates whether authentication credentials in the volatile memory of Android mobile devices can be discovered using freely available tools. The experiments that we carried out for each application included two different sets: In the first set, our goal was to check if we could recover our own submitted credentials from the memory dump of the mobile device. In the second set of experiments, the goal was to find pa...

New memory devices based on the proton transfer process

Science.gov (United States)

Wierzbowska, Małgorzata

2016-01-01

Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

Science.gov (United States)

Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

2018-03-01

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

Energy Technology Data Exchange (ETDEWEB)

Aïssa, B., E-mail: aissab@emt.inrs.ca [Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1ère Avenue, Val d' Or, Quebec J9P 1Y3 (Canada); Kroeger, J. [NanoIntegris & Raymor Nanotech, Raymor Industries Inc., 3765 La Vérendrye, Boisbriand, Quebec J7H 1R8 (Canada); Haddad, T. [Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0B8 (Canada); Rosei, F. [Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada)

2015-09-28

We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

KAUST Repository

Ghoneim, Mohamed T.; Hanna, Amir; Hussain, Muhammad Mustafa

2014-01-01

Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

KAUST Repository

Ghoneim, Mohamed T.

2014-08-01

Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

Light programmable organic transistor memory device based on hybrid dielectric

Science.gov (United States)

Ren, Xiaochen; Chan, Paddy K. L.

2013-09-01

We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

Memory Flexibility training (MemFlex) to reduce depressive symptomatology in individuals with major depressive disorder: study protocol for a randomised controlled trial.

Science.gov (United States)

Hitchcock, Caitlin; Hammond, Emily; Rees, Catrin; Panesar, Inderpal; Watson, Peter; Werner-Seidler, Aliza; Dalgleish, Tim

2015-11-03

Major depressive disorder (MDD) is associated with chronic biases in the allocation of attention and recollection of personal memories. Impaired flexibility in attention and autobiographical memory retrieval is seen to both maintain current symptoms and predict future depression. Development of innovative interventions to reduce maladaptive cognitive patterns and improve cognitive flexibility in the domain of memory may therefore advance current treatment approaches for depression. Memory specificity training and cognitive bias modification techniques have both shown some promise in improving cognitive flexibility. Here we outline plans for a trial of an innovative memory flexibility training programme, MemFlex, which advances current training techniques with the aim of improving flexibility of autobiographical memory retrieval. This trial seeks to estimate the efficacy of MemFlex, provide data on feasibility, and begin to explore mechanisms of change. We plan a single-blind, randomised, controlled, patient-level trial in which 50 individuals with MDD will complete either psychoeducation (n = 25) or MemFlex (n = 25). After completing pre-treatment measures and an orientation session, participants complete eight workbook-based sessions at home. Participants will then be assessed at post-treatment and at 3 month follow-up. The co-primary outcomes are depressive symptoms and diagnostic status at 3 month follow-up. The secondary outcomes are memory flexibility at post-treatment and number of depression free days at 3 month follow-up. Other process outcomes and mediators of any treatment effects will also be explored. This trial will establish the efficacy of MemFlex in improving memory flexibility, and reducing depressive symptoms. Any effects on process measures related to relapse may also indicate whether MemFlex may be helpful in reducing vulnerability to future depressive episodes. The low-intensity and workbook-based format of the programme may improve

Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

KAUST Repository

Wang, Hong

2015-05-01

The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible Bragg reflection waveguide devices fabricated on a plastic substrate

Science.gov (United States)

Kim, Kyung-Jo; Yi, Jeong-Ah; Oh, Min-Cheol; Noh, Young-Ouk; Lee, Hyung-Jong

2007-09-01

Bragg reflecting waveguide devices are fabricated on a flexible substrate by using a post lift-off process in order to provide highly uniform grating patterns on a wide range. In this process, the flexible substrate spin-coated on silicon wafer is released after the final fabrication process of chip dicing. The fabricated flexible Bragg reflector shows very sharp transmission spectrum with 3-dB bandwidth of 0.1 nm and 10-dB bandwidth of 0.4 nm, which proves the Bragg reflector has excellent uniformity. To achieve athermal operation of the flexible Bragg reflector, thermal expansion property of the plastic substrate is controlled by the thickness of two polymer materials constructing the plastic substrate. The flexible substrate with 0.7-μm SU-8 layers sandwiching 100-μm NOA61 layer provides an optimized thermal expansion property to compensate the thermo-optic effect of the waveguide made of ZPU polymer. The temperature dependence of the Bragg reflector is decreased to -0.011 nm/°C through the incorporation of the plastic substrate.

Flexible GaN for High Performance, Strainable Radio Frequency Devices (Postprint)

Science.gov (United States)

2017-11-02

wireless systems where consumers will benefit significantly from the high power densities achievable in GaN devices.[8] Further complicating the...future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication... power density of traditional RF amplifier materials at different frequencies and wireless generation bands, as well as an image of the flexible GaN

New memory devices based on the proton transfer process

International Nuclear Information System (INIS)

Wierzbowska, Małgorzata

2016-01-01

Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. (paper)

Low-cost rapid prototyping of flexible plastic paper based microfluidic devices

KAUST Repository

Fan, Yiqiang; Li, Huawei; Yi, Ying; Foulds, Ian G.

2013-01-01

This research presents a novel rapid prototyping method for paper-based flexible microfluidic devices. The microchannels were fabricated using laser ablation on a piece of plastic paper (permanent paper), the dimensions of the microchannels

High performance flexible electronics for biomedical devices.

Science.gov (United States)

Salvatore, Giovanni A; Munzenrieder, Niko; Zysset, Christoph; Kinkeldei, Thomas; Petti, Luisa; Troster, Gerhard

2014-01-01

Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.

Electronic memory devices based on the chalcone with negative electrostatic potential regions

International Nuclear Information System (INIS)

Yan, Bao-Long; Sun, Ru; Ge, Jian-Feng; Wang, Dong; Li, Hua; Lu, Jian-Mei

2013-01-01

The molecular electrostatic potential (ESP) properties were used for the explanation of organic electric memory ability. Several chalcone compounds, owning a negative ESP region locates at the oxygen atom, were selected in this paper to validate the selection of compounds for organic memory materials. The synthesis, characterization, fabrication of the organic memory devices and the electrical properties for them were reported, and they were shown as WORM (write once read many times) type memory devices. The molecular geometries were optimized by the addition of a changeable electric field in the x direction inside the molecules using FF-DFT (Finite Field-Density Functionary Theory) method. The relationship between ESP of the molecules under different electric field and the property was discussed, and the mechanisms associated with the memory effect were also elucidated from DFT calculation results. - Highlights: • The molecular electrostatic potential (ESP) properties were used. • The chalcone compounds were used for the WORM type device. • The molecular geometries were optimized by the addition of a changeable electric field in the x direction. • The structure–property relationship was discussed

A study on carbon nanotube bridge as a electromechanical memory device

Science.gov (United States)

Kang, Jeong Won; Ha Lee, Jun; Joo Lee, Hoong; Hwang, Ho Jung

2005-04-01

A nanoelectromechanical (NEM) nanotube random access memory (NRAM) device based on carbon nanotube (CNT) was investigated using atomistic simulations. For the CNT-based NEM memory, the mechanical properties of the CNT-bridge and van der Waals interactions between the CNT-bridge and substrate were very important. The critical amplitude of the CNT-bridge was 16% of the length of the CNT-bridge. As molecular dynamics time increased, the CNT-bridge went to the steady state under the electrostatic force with the damping of the potential and the kinetic energies of the CNT-bridge. The interatomic interaction between the CNT-bridge and substrate, value of the CNT-bridge slack, and damping rate of the CNT-bridge were very important for the operation of the NEM memory device as a nonvolatile memory.

Attentional flexibility and memory capacity in conductors and pianists.

Science.gov (United States)

Wöllner, Clemens; Halpern, Andrea R

2016-01-01

Individuals with high working memory (WM) capacity also tend to have better selective and divided attention. Although both capacities are essential for skilled performance in many areas, evidence for potential training and expertise effects is scarce. We investigated the attentional flexibility of musical conductors by comparing them to equivalently trained pianists. Conductors must focus their attention both on individual instruments and on larger sections of different instruments. We studied students and professionals in both domains to assess the contributions of age and training to these skills. Participants completed WM span tests for auditory and visual (notated) pitches and timing durations, as well as long-term memory tests. In three dichotic attention tasks, they were asked to detect small pitch and timing deviations from two melodic streams presented in baseline (separate streams), selective-attention (concentrating on only one stream), and divided-attention (concentrating on targets in both streams simultaneously) conditions. Conductors were better than pianists in detecting timing deviations in divided attention, and experts detected more targets than students. We found no group differences for WM capacity or for pitch deviations in the attention tasks, even after controlling for the older age of the experts. Musicians' WM spans across multimodal conditions were positively related to selective and divided attention. High-WM participants also had shorter reaction times in selective attention. Taken together, conductors showed higher attentional flexibility in successfully switching between different foci of attention.

Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

Science.gov (United States)

Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

2012-01-01

Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

Science.gov (United States)

Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

2007-04-01

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

Non-Hebbian learning implementation in light-controlled resistive memory devices.

Science.gov (United States)

Ungureanu, Mariana; Stoliar, Pablo; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E

2012-01-01

Non-Hebbian learning is often encountered in different bio-organisms. In these processes, the strength of a synapse connecting two neurons is controlled not only by the signals exchanged between the neurons, but also by an additional factor external to the synaptic structure. Here we show the implementation of non-Hebbian learning in a single solid-state resistive memory device. The output of our device is controlled not only by the applied voltages, but also by the illumination conditions under which it operates. We demonstrate that our metal/oxide/semiconductor device learns more efficiently at higher applied voltages but also when light, an external parameter, is present during the information writing steps. Conversely, memory erasing is more efficiently at higher applied voltages and in the dark. Translating neuronal activity into simple solid-state devices could provide a deeper understanding of complex brain processes and give insight into non-binary computing possibilities.

RFID and Memory Devices Fabricated Integrally on Substrates

Science.gov (United States)

Schramm, Harry F.

2004-01-01

Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for

Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

International Nuclear Information System (INIS)

Avila-Nino, J.A.; Segura-Cardenas, E.; Sustaita, A.O.; Cruz-Cruz, I.; Lopez-Sandoval, R.; Reyes-Reyes, M.

2011-01-01

We have investigated the memory effect of the nanocomposites of functionalized carbon nanoshells (f-CNSs) mixed with poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) polymer. The f-CNSs were synthesized by the spray pyrolysis method and functionalized in situ with functional groups (OH, COOH, C-H, C-OH) with the aim of improving their compatibility in the aqueous dispersion of PEDOT:PSS. The current-voltage (I-V) sweep curves at room temperature for the Al/f-CNSs, for certain concentrations range, embedded in a PEDOT:PSS layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. The memory effect observed in the devices can be explained due to the existence of trapped charges in the f-CNSs/PEDOT:PSS layer. The carrier transport mechanisms for the memory devices is studied and discussed.

Nonvolatile write-once-read-many-times memory device with functionalized-nanoshells/PEDOT:PSS nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Avila-Nino, J.A.; Segura-Cardenas, E. [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Alvaro Obregon 64 Zona Centro, 78000 SLP (Mexico); Sustaita, A.O. [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, CP 78216, San Luis Potosi (Mexico); Cruz-Cruz, I. [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Alvaro Obregon 64 Zona Centro, 78000 SLP (Mexico); Lopez-Sandoval, R. [Instituto Potosino de Investigacion Cientifica y Tecnologica, Camino a la presa San Jose 2055, CP 78216, San Luis Potosi (Mexico); Reyes-Reyes, M., E-mail: reyesm@iico.uaslp.mx [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Alvaro Obregon 64 Zona Centro, 78000 SLP (Mexico)

2011-03-25

We have investigated the memory effect of the nanocomposites of functionalized carbon nanoshells (f-CNSs) mixed with poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) polymer. The f-CNSs were synthesized by the spray pyrolysis method and functionalized in situ with functional groups (OH, COOH, C-H, C-OH) with the aim of improving their compatibility in the aqueous dispersion of PEDOT:PSS. The current-voltage (I-V) sweep curves at room temperature for the Al/f-CNSs, for certain concentrations range, embedded in a PEDOT:PSS layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. The memory effect observed in the devices can be explained due to the existence of trapped charges in the f-CNSs/PEDOT:PSS layer. The carrier transport mechanisms for the memory devices is studied and discussed.

Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS2 quantum dot-polymethylmethacrylate nanocomposites

International Nuclear Information System (INIS)

Zhou, Yang; Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook

2014-01-01

Nonvolatile memory devices based on CuInS 2 (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10 −10 was maintained for 8 × 10 3 cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10 6 cycles converged to 2.40 × 10 −10 , indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams

Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

Energy Technology Data Exchange (ETDEWEB)

Zhang, Li, E-mail: lizhang9@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Li, Ye; Shi, Jun [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China); Shi, Gaoquan [Department of Chemistry, Tsinghua University, Beijing 100084 (China); Cao, Shaokui, E-mail: Caoshaokui@zzu.edu.cn [School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

2013-11-01

An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10{sup 5}. Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states.

Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

International Nuclear Information System (INIS)

Zhang, Li; Li, Ye; Shi, Jun; Shi, Gaoquan; Cao, Shaokui

2013-01-01

An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 10 5 . Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets. - Highlights: • Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated. • The memory device was fabricated through a simple solution processing technique. • The device shows a remarkable electrical bistable behavior and excellent stability. • Memory mechanism is deduced from the modeling of the currents in both states

Liquid Self-Balancing Device Effects on Flexible Rotor Stability

Directory of Open Access Journals (Sweden)

Leonardo Urbiola-Soto

2013-01-01

Full Text Available Nearly a century ago, the liquid self-balancing device was first introduced by M. LeBlanc for passive balancing of turbine rotors. Although of common use in many types or rotating machines nowadays, little information is available on the unbalance response and stability characteristics of this device. Experimental fluid flow visualization evidences that radial and traverse circulatory waves arise due to the interaction of the fluid backward rotation and the baffle boards within the self-balancer annular cavity. The otherwise destabilizing force induced by trapped fluids in hollow rotors, becomes a stabilizing mechanism when the cavity is equipped with adequate baffle boards. Further experiments using Particle Image Velocimetry (PIV enable to assess the active fluid mass fraction to be one-third of the total fluid mass. An analytical model is introduced to study the effects of the active fluid mass fraction on a flexible rotor supported by flexible supports excited by bwo different destabilizing mechanisms; rotor internal friction damping and aerodynamic cross-coupling. It is found that the fluid radial and traverse forces contribute to the balancing action and to improve the rotor stability, respectively.

Flexible barrier film, method of forming same, and organic electronic device including same

Science.gov (United States)

Blizzard, John; Tonge, James Steven; Weidner, William Kenneth

2013-03-26

A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1.times.10.sup.-2 g/m.sup.2/day at 22.degree. C. and 47% relative humidity. The flexible barrier film is formed from a composition, which comprises a multi-functional acrylate. The composition further comprises the reaction product of an alkoxy-functional organometallic compound and an alkoxy-functional organosilicon compound. A method of forming the flexible barrier film includes the steps of disposing the composition on a substrate and curing the composition to form the flexible barrier film. The flexible barrier film may be utilized in organic electronic devices.

Electrical studies of Ge4Sb1Te5 devices for memory applications

Science.gov (United States)

Sangeetha, B. G.; Shylashree, N.

2018-05-01

In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

Atomic-layer deposited IrO2 nanodots for charge-trap flash-memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Cha, Young-Kwan; Seo, Bum-Seok; Park, Sangjin; Park, Ju-Hee; Shin, Sangmin; Seol, Kwang Soo; Park, Jong-Bong; Jung, Young-Soo; Park, Youngsoo; Park, Yoondong; Yoo, In-Kyeong; Choi, Suk-Ho

2007-01-01

Charge-trap flash- (CTF) memory structures have been fabricated by employing IrO 2 nanodots (NDs) grown by atomic-layer deposition. A band of isolated IrO 2 NDs of about 3 nm lying almost parallel to Si/SiO 2 interface is confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy. The memory device with IrO 2 NDs shows much larger capacitance-voltage (C-V) hysteresis and memory window compared with the control sample without IrO 2 NDs. After annealing at 800 deg. C for 20 min, the ND device shows almost no change in the width of C-V hysteresis and the ND distribution. These results indicate that the IrO 2 NDs embedded in SiO 2 can be utilized as thermally stable, discrete charge traps, promising for metal oxide-ND-based CTF memory devices

Atmospheric pressure plasmas for surface modification of flexible and printed electronic devices: A review

Energy Technology Data Exchange (ETDEWEB)

Kim, Kyong Nam; Lee, Seung Min; Mishra, Anurag [Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Yeom, Geun Young, E-mail: gyyeom@skku.edu [Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2016-01-01

Recently, non-equilibrium atmospheric pressure plasma, especially those operated at low gas temperatures, have become a topic of great interest for the processing of flexible and printed electronic devices due to several benefits such as the reduction of process and reactor costs, the employment of easy-to-handle apparatuses and the easier integration into continuous production lines. In this review, several types of typical atmospheric pressure plasma sources have been addressed, and the processes including surface treatment, texturing and sintering for application to flexible and printed electronic devices have been discussed.

Application of nanomaterials in two-terminal resistive-switching memory devices

Directory of Open Access Journals (Sweden)

Jianyong Ouyang

2010-05-01

Full Text Available Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs, nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Dr. Jianyong Ouyang received his bachelor degree from the Tsinghua University in Beijing, China, and MSc from the Institute of Chemistry, Chinese Academy of Science. He received his PhD from the Institute for Molecular

Manufacturing and testing flexible microfluidic devices with optical and electrical detection mechanisms

OpenAIRE

Ivan, M.G.; Vivet, F.; Meinders, E.R.

2010-01-01

Flexible microfluidic devices made of poly(dimethylsiloxane) (PDMS) were manufactured by soft lithography, and tested in detection of ionic species using optical absorption spectroscopy and electrical measurements. PDMS was chosen due to its flexibility and ease of surface modification by exposure to plasma and UV treatment, its transparency in UV-Vis regions of the light spectrum, and biocompatibility. The dual-detection mechanism allows the user more freedom in choosing the detection tool, ...

Observation of long term potentiation in papain-based memory devices

KAUST Repository

Bag, A.; Hota, Mrinal Kanti; Mallik, Sandipan B.; Maì ti, Chinmay Kumar

2014-01-01

Biological synaptic behavior in terms of long term potentiation has been observed in papain-based (plant protein) memory devices (memristors) for the first time. Improvement in long term potentiation depends on pulse amplitude and width (duration). Continuous/repetitive dc voltage sweep leads to an increase in memristor conductivity leading to a long term memory in the 'learning' processes.

Observation of long term potentiation in papain-based memory devices

KAUST Repository

Bag, A.

2014-06-01

Biological synaptic behavior in terms of long term potentiation has been observed in papain-based (plant protein) memory devices (memristors) for the first time. Improvement in long term potentiation depends on pulse amplitude and width (duration). Continuous/repetitive dc voltage sweep leads to an increase in memristor conductivity leading to a long term memory in the \\'learning\\' processes.

Application of graphene oxide-poly (vinyl alcohol) polymer nanocomposite for memory devices

Science.gov (United States)

Kaushal, Jyoti; Kaur, Ravneet; Sharma, Jadab; Tripathi, S. K.

2018-05-01

Significant attention has been gained by polymer nanocomposites because of their possible demands in future electronic memory devices. In the present work, device based on Graphene Oxide (GO) and polyvinyl alcohol (PVA) has been made and examined for the memory device application. The prepared Graphene oxide (GO) and GO-PVA nanocomposite (NC) has been characterized by X-ray Diffraction (XRD). GO nanosheets show the diffraction peak at 2θ = 11.60° and the interlayer spacing of 0.761 nm. The XRD of GO-PVA NC shows the diffraction peak at 2θ =18.56°. The fabricated device shows bipolar switching behavior having ON/OFF current ratio ˜102. The Write-Read-Erase-Read (WRER) cycles test shows that the Al/GO-PVA/Ag device has good stability and repeatability.

Fabrication of graphene-based flexible devices utilizing a soft lithographic patterning method

International Nuclear Information System (INIS)

Wook Jung, Min; Myung, Sung; Woong Kim, Ki; Song, Wooseok; Suk Lee, Sun; Lim, Jongsun; An, Ki-Seok; Jo, You-Young; Park, Chong-Yun

2014-01-01

There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a

Fabrication of graphene-based flexible devices utilizing a soft lithographic patterning method

Science.gov (United States)

Jung, Min Wook; Myung, Sung; Kim, Ki Woong; Song, Wooseok; Jo, You-Young; Lee, Sun Suk; Lim, Jongsun; Park, Chong-Yun; An, Ki-Seok

2014-07-01

There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

KAUST Repository

Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

KAUST Repository

Nassar, Joanna M.

2014-08-01

Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

KAUST Repository

Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2013-01-01

(100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree

A fast ECL bus memory: dual input memory

International Nuclear Information System (INIS)

Cesaroni, F.; Pascale, G.; Gentile, S.; Gao, Z.

1992-01-01

A fast and flexible dual input memory (DIM) has been constructed as single CAMAC unit. The device has been designed to receive via front panel two 16-bit data words, which can be stored in sequential mode into a memory and, at the same time, presented on the output. The design implemented also the possibility to connect 16-bit differential ECL outputs of many DIMs modules on the same bus. Its timing characteristics for writing and reading into and from memory is only 20 ns. This makes the module a useful element for all kinds of fast acquisition systems, as tempory storage of data, or data source or spy module. It will be, for example, used in the new energy tripper of the L3 experiment, designed for 8x8 bunch mode operation of LEP in 1992. (orig.)

Novel nano materials for high performance logic and memory devices

Science.gov (United States)

Das, Saptarshi

After decades of relentless progress, the silicon CMOS industry is approaching a stall in device performance for both logic and memory devices due to fundamental scaling limitations. In order to reinforce the accelerating pace, novel materials with unique properties are being proposed on an urgent basis. This list includes one dimensional nanotubes, quasi one dimensional nanowires, two dimensional atomistically thin layered materials like graphene, hexagonal boron nitride and the more recently the rich family of transition metal di-chalcogenides comprising of MoS2, WSe2, WS2 and many more for logic applications and organic and inorganic ferroelectrics, phase change materials and magnetic materials for memory applications. Only time will tell who will win, but exploring these novel materials allow us to revisit the fundamentals and strengthen our understanding which will ultimately be beneficial for high performance device design. While there has been growing interest in two-dimensional (2D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancies due to the lack of a complete picture of their performance potential. The fact that the 2-D layered semiconducting di-chalcogenides need to be connected to the "outside" world in order to capitalize on their ultimate potential immediately emphasizes the importance of a thorough understanding of the contacts. This thesis demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS2 layers the excellent intrinsic properties of this 2D material can be harvested. A comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back gated multilayer MoS 2 field effect transistors is also provided. A resistor network model that comprises of Thomas-Fermi charge screening and interlayer coupling is used to explain the non-monotonic trend in the extracted field effect

Germanium nanoparticles grown at different deposition times for memory device applications

International Nuclear Information System (INIS)

Mederos, M.; Mestanza, S.N.M.; Lang, R.; Doi, I.; Diniz, J.A.

2016-01-01

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

Germanium nanoparticles grown at different deposition times for memory device applications

Energy Technology Data Exchange (ETDEWEB)

Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

2016-07-29

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

Science.gov (United States)

Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

2016-06-01

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

Graphene resistive random memory — the promising memory device in next generation

International Nuclear Information System (INIS)

Wang Xue-Feng; Zhao Hai-Ming; Yang Yi; Ren Tian-Ling

2017-01-01

Graphene-based resistive random access memory (GRRAM) has grasped researchers’ attention due to its merits compared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can be divided into two categories: graphene RRAM and graphene oxide (GO)/reduced graphene oxide (rGO) RRAM. Using graphene as the electrode, GRRAM can own many good characteristics, such as low power consumption, higher density, transparency, SET voltage modulation, high uniformity, and so on. Graphene flakes sandwiched between two dielectric layers can lower the SET voltage and achieve multilevel switching. Moreover, the GRRAM with rGO and GO as the dielectric or electrode can be simply fabricated. Flexible and high performance RRAM and GO film can be modified by adding other materials layer or making a composite with polymer, nanoparticle, and 2D materials to further improve the performance. Above all, GRRAM shows huge potential to become the next generation memory. (topical reviews)

Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

Science.gov (United States)

Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

2017-12-01

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

Science.gov (United States)

Tian, He; Chen, Hong-Yu; Ren, Tian-Ling; Li, Cheng; Xue, Qing-Tang; Mohammad, Mohammad Ali; Wu, Can; Yang, Yi; Wong, H-S Philip

2014-06-11

Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

Directory of Open Access Journals (Sweden)

Meng Chuan Lee

2013-01-01

Full Text Available Conventional technology scaling is implemented to meet the insatiable demand of high memory density and low cost per bit of charge storage nonvolatile memory (NVM devices. In this study, effect of technology scaling to anomalous threshold voltage ( variability is investigated thoroughly on postcycled and baked nitride based charge storage NVM devices. After long annealing bake of high temperature, cell’s variability of each subsequent bake increases within stable distribution and found exacerbate by technology scaling. Apparent activation energy of this anomalous variability was derived through Arrhenius plots. Apparent activation energy (Eaa of this anomalous variability is 0.67 eV at sub-40 nm devices which is a reduction of approximately 2 times from 110 nm devices. Technology scaling clearly aggravates this anomalous variability, and this poses reliability challenges to applications that demand strict control, for example, reference cells that govern fundamental program, erase, and verify operations of NVM devices. Based on critical evidence, this anomalous variability is attributed to lateral displacement of trapped charges in nitride storage layer. Reliability implications of this study are elucidated. Moreover, potential mitigation methods are proposed to complement technology scaling to prolong the front-runner role of nitride based charge storage NVM in semiconductor flash memory market.

A Compact Kapton-based Inkjet Printed Multiband Antenna for Flexible Wireless Devices

KAUST Repository

Ahmed, Sana

2015-04-20

A low cost inkjet printed multiband antenna envisioned for integration into flexible and conformal mobile devices is presented. The antenna structure contains a novel triangular iterative design with coplanar waveguide (CPW) feed, printed on a Kapton polyimide-based flexible substrate with dimensions of 70 x 70 x 0.11 mm3. The antenna covers four wide frequency bands with measured impedance bandwidths of 54.4%, 14%, 23.5% and 17.2%, centered at 1.2, 2.0, 2.6 and 3.4 GHz, respectively, thus, enabling it to cover GSM 900, GPS, UMTS, WLAN, ISM, Bluetooth, LTE 2300/ 2500 and WiMAX standards. The antenna has omnidirectional radiation pattern with a maximum gain of 2.1 dBi. To characterize the flexibility of the antenna, the fabricated prototype is tested in convex and concave bent configurations for radii of 78mm and 59mm. The overall performance remains unaffected, except a minor shift of 20 MHz and 60 MHz in S11, for concave bending at both radii. The compact, lightweight and conformal design as well as multiband performance in bent configurations, proves the suitability of the antenna for future electronic devices.

Microwave oven fabricated hybrid memristor devices for non-volatile memory storage

International Nuclear Information System (INIS)

Verrelli, E; Gray, R J; O’Neill, M; Kemp, N T; Kelly, S M

2014-01-01

Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no forming step and exhibit reliable and reproducible bipolar resistive switching at low voltages and with low power usage. We attribute these properties to a combination of the high aspect ratio of the nanorods and the polymeric hybrid structure of the device. The extremely easy, fast and low-cost solution based method of fabrication makes possible the simple and quick production of cheap memory cells. (paper)

All-spin logic operations: Memory device and reconfigurable computing

Science.gov (United States)

Patra, Moumita; Maiti, Santanu K.

2018-02-01

Exploiting spin degree of freedom of electron a new proposal is given to characterize spin-based logical operations using a quantum interferometer that can be utilized as a programmable spin logic device (PSLD). The ON and OFF states of both inputs and outputs are described by spin state only, circumventing spin-to-charge conversion at every stage as often used in conventional devices with the inclusion of extra hardware that can eventually diminish the efficiency. All possible logic functions can be engineered from a single device without redesigning the circuit which certainly offers the opportunities of designing new generation spintronic devices. Moreover, we also discuss the utilization of the present model as a memory device and suitable computing operations with proposed experimental setups.

Numerical analysis of a polysilicon-based resistive memory device

KAUST Repository

Berco, Dan; Chand, Umesh

2018-01-01

This study investigates a conductive bridge resistive memory device based on a Cu top electrode, 10-nm polysilicon resistive switching layer and a TiN bottom electrode, by numerical analysis for $$10^{3}$$103 programming and erase simulation cycles

Spatial memory in nonhuman primates implanted with the subdural pharmacotherapy device.

Science.gov (United States)

Ludvig, Nandor; Tang, Hai M; Baptiste, Shirn L; Stefanov, Dimitre G; Kral, John G

2015-06-01

This study investigated the possible influence of the Subdural Pharmacotherapy Device (SPD) on spatial memory in 3 adult, male bonnet macaques (Macaca radiata). The device was implanted in and above the subdural/subarachnoid space and cranium overlaying the right parietal/frontal cortex: a circuitry involved in spatial memory processing. A large test chamber, equipped with four baited and four non-baited food-ports at different locations, was used: reaches into empty food ports were counted as spatial memory errors. In this study of within-subject design, before SPD implantation (control) the animals made mean 373.3 ± 114.9 (mean ± SEM) errors in the first spatial memory test session. This value dropped to 47.7 ± 18.4 by the 8th session. After SPD implantation and alternating cycles of transmeningeal saline delivery and local cerebrospinal fluid (CSF) drainage in the implanted cortex the spatial memory error count, with the same port locations, was 33.0 ± 12.2 during the first spatial memory test session, further decreasing to 5.7 ± 3.5 by the 8th post-implantation session (Pmemory performance, which in fact included at least one completely error-free session per animal over time. The study showed that complication-free implantation and use of the SPD over the parietal and frontal cortices for months leave spatial memory processes intact in nonhuman primates. Copyright © 2015 Elsevier B.V. All rights reserved.

Language Mediated Concept Activation in Bilingual Memory Facilitates Cognitive Flexibility

Directory of Open Access Journals (Sweden)

Anatoliy V. Kharkhurin

2017-06-01

Full Text Available This is the first attempt of empirical investigation of language mediated concept activation (LMCA in bilingual memory as a cognitive mechanism facilitating divergent thinking. Russian–English bilingual and Russian monolingual college students were tested on a battery of tests including among others Abbreviated Torrance Tests for Adults assessing divergent thinking traits and translingual priming (TLP test assessing the LMCA. The latter was designed as a lexical decision priming test, in which a prime and a target were not related in Russian (language of testing, but were related through their translation equivalents in English (spoken only by bilinguals. Bilinguals outperformed their monolingual counterparts on divergent thinking trait of cognitive flexibility, and bilinguals’ performance on this trait could be explained by their TLP effect. Age of second language acquisition and proficiency in this language were found to relate to the TLP effect, and therefore were proposed to influence the directionality and strength of connections in bilingual memory.

Negative effect of Au nanoparticles on an IGZO TFT-based nonvolatile memory device

Energy Technology Data Exchange (ETDEWEB)

Lim, Myunghoon; Yoo, Gwangwe; Lee, Jongtaek; Jeong, Seokwon; Roh, Yonghan; Park, Jinhong; Kwon, Namyong [Sungkyunkwan University, Suwon (Korea, Republic of); Jung, Wooshik [Stanford University, Stanford, CA (United States)

2014-02-15

In this letter, the electrical characteristics of nonvolatile memory devices based on back gate type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Au nanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs is controlled using a by 500 .deg. C annealing process after the Au thin-film deposition. The size and the roughness of the Au NPs were observed by using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. In order to analyze the electrical properties according to Au NP size, we measured the current-voltage (I{sub D}-V{sub G}) characteristics of the nonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. The size of the Au NP increased, so did the surface roughness of the gate. This resulted in increased carrier scattering, which subsequently degraded the on-current of the memory device. In addition, inter-diffusion between the Au and the α-IGZO through the non-uniform Al{sub 2}O{sub 3} tunneling layer seemed to further degrade the device performance.

Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

International Nuclear Information System (INIS)

Whitcher, T J; Woon, K L; Wong, W S; Chanlek, N; Nakajima, H; Saisopa, T; Songsiriritthigul, P

2016-01-01

Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current–voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK–Al interface. (paper)

Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

Science.gov (United States)

Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

2016-02-01

Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

Manufacturing and testing flexible microfluidic devices with optical and electrical detection mechanisms

Science.gov (United States)

Ivan, Marius G.; Vivet, Frédéric; Meinders, Erwin R.

2010-06-01

Flexible microfluidic devices made of poly(dimethylsiloxane) (PDMS) were manufactured by soft lithography, and tested in detection of ionic species using optical absorption spectroscopy and electrical measurements. PDMS was chosen due to its flexibility and ease of surface modification by exposure to plasma and UV treatment, its transparency in UV-Vis regions of the light spectrum, and biocompatibility. The dual-detection mechanism allows the user more freedom in choosing the detection tool, and a functional device was successfully tested. Optical lithography was employed for manufacturing templates, which were subsequently used for imprinting liquid PDMS by thermal curing. Gold electrodes having various widths and distances among them were patterned with optical lithography on the top part which sealed the microchannels, and the devices were employed for detection of ionic species in aqueous salt solutions as well as micro-electrolysis cells. Due to the transparency of PDMS in UV-Vis the microfluidics were also used as photoreactors, and the in-situ formed charged species were monitored by applying a voltage between electrodes. Upon addition of a colorimetric pH sensor, acid was detected with absorption spectroscopy.

Modeling of strain effects on the device behaviors of ferroelectric memory field-effect transistors

International Nuclear Information System (INIS)

Yang, Feng; Hu, Guangda; Wu, Weibing; Yang, Changhong; Wu, Haitao; Tang, Minghua

2013-01-01

The influence of strains on the channel current–gate voltage behaviors and memory windows of ferroelectric memory field-effect transistors (FeMFETs) were studied using an improved model based on the Landau–Devonshire theory. ‘Channel potential–gate voltage’ ferroelectric polarization and silicon surface potential diagrams were constructed for strained single-domain BaTiO 3 FeMFETs. The compressive strains can increase (or decrease) the amplitude of transistor currents and enlarge memory windows. However, tensile strains only decrease the maximum value of transistor currents and compress memory windows. Mismatch strains were found to have a significant influence on the electrical behaviors of the devices, therefore, they must be considered in FeMFET device designing. (fast track communication)

Camera memory study for large space telescope. [charge coupled devices

Science.gov (United States)

Hoffman, C. P.; Brewer, J. E.; Brager, E. A.; Farnsworth, D. L.

1975-01-01

Specifications were developed for a memory system to be used as the storage media for camera detectors on the large space telescope (LST) satellite. Detectors with limited internal storage time such as intensities charge coupled devices and silicon intensified targets are implied. The general characteristics are reported of different approaches to the memory system with comparisons made within the guidelines set forth for the LST application. Priority ordering of comparisons is on the basis of cost, reliability, power, and physical characteristics. Specific rationales are provided for the rejection of unsuitable memory technologies. A recommended technology was selected and used to establish specifications for a breadboard memory. Procurement scheduling is provided for delivery of system breadboards in 1976, prototypes in 1978, and space qualified units in 1980.

A flexible analog memory address list manager/controller for PHENIX

International Nuclear Information System (INIS)

Ericson, M.N.; Walker, J.W.; Britton, C.L.; Wintenberg, A.L.; Young, G.R.

1995-01-01

A programmable analog memory address list manager/controller has been developed for use with all analog memory-based detector subsystems of PHENIX. The unit provides simultaneous read/write control, cell write-over protection for both a Level-1 trigger decision delay and digitization latency, and re-ordering of AMU addresses following conversion, at a beam crossing rate of 112 ns. Addresses are handled such that up to 5 Level-1 events can be maintained in the AMU without write-over. Data tagging is implemented for handling overlapping and shared beam event data packets. Full usage in all PHENIX analog memory-based detector sub-systems is accomplished by the use of detector-specific programmable parameters -- the number of data samples per Level-1 trigger valid and the swnple spacing. Architectural candidates for the system are discussed with emphasis on implementation implications. Details of the design are presented including design simulations, timing information, and test results from a full implementation using programmable logic devices

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

International Nuclear Information System (INIS)

Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

2010-01-01

A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method. (semiconductor devices)

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

Energy Technology Data Exchange (ETDEWEB)

Shinde, Sachin M.; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2014-12-07

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.

Inhibition, flexibility, working memory and planning in autism spectrum disorders with and without comorbid ADHD-symptoms

Directory of Open Access Journals (Sweden)

Schmidt Martin H

2008-01-01

Full Text Available Abstract Background Recent studies have not paid a great deal of attention to comorbid attention-deficit/hyperactivity disorder (ADHD symptoms in autistic children even though it is well known that almost half of children with autism spectrum disorder (ASD suffer from hyperactivity, inattention and impulsivity. The goal of this study was to evaluate and compare executive functioning (EF profiles in children with ADHD and in children with ASD with and without comorbid ADHD. Methods Children aged 6 to 18 years old with ADHD (n = 20 or ASD (High-Functioning autism or Asperger syndrome with (n = 20 and without (n = 20 comorbid ADHD and a typically developing group (n = 20 were compared on a battery of EF tasks comprising inhibition, flexibility, working memory and planning tasks. A MANOVA, effect sizes as well as correlations between ADHD-symptomatology and EF performance were calculated. Age- and IQ-corrected z scores were used. Results There was a significant effect for the factor group (F = 1.55; dF = 42; p = .02. Post-hoc analysis revealed significant differences between the ADHD and the TD group on the inhibition task for false alarms (p = .01 and between the ADHD group, the ASD+ group (p = .03, the ASD- group (p = .02 and the TD group (p = .01 for omissions. Effect sizes showed clear deficits of ADHD children in inhibition and working memory tasks. Participants with ASD were impaired in planning and flexibility abilities. The ASD+ group showed compared to the ASD- group more problems in inhibitory performance but not in the working memory task. Conclusion Our findings replicate previous results reporting impairment of ADHD children in inhibition and working memory tasks and of ASD children in planning and flexibility abilities. The ASD + group showed similarities to the ADHD group with regard to inhibitory but not to working memory deficits. Nevertheless the heterogeneity of these and previous results shows that EF assessment is not useful for

A flexible super-capacitive solid-state power supply for miniature implantable medical devices.

Science.gov (United States)

Meng, Chuizhou; Gall, Oren Z; Irazoqui, Pedro P

2013-12-01

We present a high-energy local power supply based on a flexible and solid-state supercapacitor for miniature wireless implantable medical devices. Wireless radio-frequency (RF) powering recharges the supercapacitor through an antenna with an RF rectifier. A power management circuit for the super-capacitive system includes a boost converter to increase the breakdown voltage required for powering device circuits, and a parallel conventional capacitor as an intermediate power source to deliver current spikes during high current transients (e.g., wireless data transmission). The supercapacitor has an extremely high area capacitance of ~1.3 mF/mm(2), and is in the novel form of a 100 μm-thick thin film with the merit of mechanical flexibility and a tailorable size down to 1 mm(2) to meet various clinical dimension requirements. We experimentally demonstrate that after fully recharging the capacitor with an external RF powering source, the supercapacitor-based local power supply runs a full system for electromyogram (EMG) recording that consumes ~670 μW with wireless-data-transmission functionality for a period of ~1 s in the absence of additional RF powering. Since the quality of wireless powering for implantable devices is sensitive to the position of those devices within the RF electromagnetic field, this high-energy local power supply plays a crucial role in providing continuous and reliable power for medical device operations.

Model for a flexible motor memory based on a self-active recurrent neural network.

Science.gov (United States)

Boström, Kim Joris; Wagner, Heiko; Prieske, Markus; de Lussanet, Marc

2013-10-01

Using recent recurrent network architecture based on the reservoir computing approach, we propose and numerically simulate a model that is focused on the aspects of a flexible motor memory for the storage of elementary movement patterns into the synaptic weights of a neural network, so that the patterns can be retrieved at any time by simple static commands. The resulting motor memory is flexible in that it is capable to continuously modulate the stored patterns. The modulation consists in an approximately linear inter- and extrapolation, generating a large space of possible movements that have not been learned before. A recurrent network of thousand neurons is trained in a manner that corresponds to a realistic exercising scenario, with experimentally measured muscular activations and with kinetic data representing proprioceptive feedback. The network is "self-active" in that it maintains recurrent flow of activation even in the absence of input, a feature that resembles the "resting-state activity" found in the human and animal brain. The model involves the concept of "neural outsourcing" which amounts to the permanent shifting of computational load from higher to lower-level neural structures, which might help to explain why humans are able to execute learned skills in a fluent and flexible manner without the need for attention to the details of the movement. Copyright © 2013 Elsevier B.V. All rights reserved.

Durable transparent carbon nanotube films for flexible device components

International Nuclear Information System (INIS)

Sierros, K.A.; Hecht, D.S.; Banerjee, D.A.; Morris, N.J.; Hu, L.; Irvin, G.C.; Lee, R.S.; Cairns, D.R.

2010-01-01

This paper describes a durable carbon nanotube (CNT) film for flexible devices and its mechanical properties. Films as thin as 10 nm thick have properties approaching those of existing electrodes based on indium tin oxide (ITO) but with significantly improved mechanical properties. In uniaxial tension, strains as high as 25% are required for permanent damage and at lower strains resistance changes are slight and consistent with elastic deformation of the individual CNTs. A simple model confirms that changes in electrical resistance are described by a Poisson's ratio of 0.22. These films are also durable to cyclic loading, and even at peak strains of 10% no significant damage occurs after 250 cycles. The scratch resistance is also high as measured by nanoscratch, and for a 50 μm tip a load of 140 mN is required to cause initial failure. This is more than 5 times higher than is required to cause cracking in ITO. The robustness of the transparent conductive coating leads to significant improvement in device performance. In touch screen devices fabricated using CNT no failure occurs after a million actuations while for devices based on ITO electrodes 400,000 cycles are needed to cause failure. These durable electrodes hold the key to developing robust, large-area, lightweight, optoelectronic devices such as lighting, displays, electronic-paper, and printable solar cells. Such devices could hold the key to producing inexpensive green energy, providing reliable solid-state lighting, and significantly reducing our dependence on paper.

Development of a flexible and bendable vibrotactile actuator based on wave-shaped poly(vinyl chloride)/acetyl tributyl citrate gels for wearable electronic devices

Science.gov (United States)

Park, Won-Hyeong; Bae, Jin Woo; Shin, Eun-Jae; Kim, Sang-Youn

2016-11-01

The paradigm of consumer electronic devices is being shifted from rigid hand-held devices to flexible/wearable devices in search of benefits such as enhanced usability and portability, excellent wear characteristics, and more functions in less space. However, the fundamental incompatibility of flexible/wearable devices and a rigid actuator brought forth a new issue obstructing commercialization of flexible/wearable devices. In this paper, we propose a new wave-shaped eco-friendly PVC gel, and a new flexible and bendable vibrotactile actuator that could easily be applied to wearable electronic devices. We explain the vibration mechanism of the proposed vibrotactile actuator and investigate its influence on the content of plasticizer for the performance of the proposed actuator. An experiment for measuring vibrational amplitude was conducted over a wide frequency range. The experiment clearly showed that the proposed vibrotactile actuator could create a variety of haptic sensations in wearable devices.

Highly Flexible and Efficient Fabric-Based Organic Light-Emitting Devices for Clothing-Shaped Wearable Displays.

Science.gov (United States)

Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol

2017-07-25

Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.

Effects of Thermal Resistance on One-Dimensional Thermal Analysis of the Epidermal Flexible Electronic Devices Integrated with Human Skin

Science.gov (United States)

Li, He; Cui, Yun

2017-12-01

Nowadays, flexible electronic devices are increasingly used in direct contact with human skin to monitor the real-time health of human body. Based on the Fourier heat conduction equation and Pennes bio-heat transfer equation, this paper deduces the analytical solutions of one - dimensional heat transfer for flexible electronic devices integrated with human skin under the condition of a constant power. The influence of contact thermal resistance between devices and skin is considered as well. The corresponding finite element model is established to verify the correctness of analytical solutions. The results show that the finite element analysis agrees well with the analytical solution. With bigger thermal resistance, temperature increase of skin surface will decrease. This result can provide guidance for the design of flexible electronic devices to reduce the negative impact that exceeding temperature leave on human skin.

Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

CERN Document Server

Okuyama, Masanori

2005-01-01

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

International Nuclear Information System (INIS)

Seo, Kyungah; Park, Sangsu; Lee, Kwanghee; Lee, Byounghun; Hwang, Hyunsang; Kim, Insung; Jung, Seungjae; Jo, Minseok; Park, Jubong; Shin, Jungho; Biju, Kuyyadi P; Kong, Jaemin

2011-01-01

We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

KAUST Repository

Tai, Yanlong; Chen, Tao; Lubineau, Gilles

2017-01-01

Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film's structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

A Sandwiched/Cracked Flexible Film for Multi-Thermal Monitoring and Switching Devices

KAUST Repository

Tai, Yanlong

2017-08-30

Polydimethylsiloxane (PDMS)-based flexible films have substantiated advantages in various sensing applications. Here, we demonstrate the highly sensitive and programmable thermal-sensing capability (thermal index, B, up to 126 × 103 K) of flexible films with tunable sandwiched microstructures (PDMS/cracked single-walled carbon nanotube (SWCNT) film/PDMS) when a thermal stimulus is applied. We found that this excellent performance results from the following features of the film\\'s structural and material design: (1) the sandwiched structure allows the film to switch from a three-dimensional to a two-dimensional in-plane deformation and (2) the stiffness of the SWCNT film is decreased by introducing microcracks that make deformation easy and that promote the macroscopic piezoresistive behavior of SWCNT crack islands and the microscopic piezoresistive behavior of SWCNT bundles. The PDMS layer is characterized by a high coefficient of thermal expansion (α = 310 × 10-6 K-1) and low stiffness (∼2 MPa) that allow for greater flexibility and higher temperature sensitivity. We determined the efficacy of our sandwiched, cracked, flexible films in monitoring and switching flexible devices when subjected to various stimuli, including thermal conduction, thermal radiation, and light radiation.

Attention-deficit/hyperactivity disorder: the impact of methylphenidate on working memory, inhibition capacity and mental flexibility.

Science.gov (United States)

Bolfer, Cristiana; Pacheco, Sandra Pasquali; Tsunemi, Miriam Harumi; Carreira, Walter Souza; Casella, Beatriz Borba; Casella, Erasmo Barbante

2017-04-01

To compare children with attention-deficit/hyperactivity disorder (ADHD), before and after the use of methylphenidate, and a control group, using tests of working memory, inhibition capacity and mental flexibility. Neuropsychological tests were administrated to 53 boys, 9-12 years old: the WISC-III digit span backward, and arithmetic; Stroop Color; and Trail Making Tests. The case group included 23 boys with ADHD, who were combined type, treatment-naive, and with normal intelligence without comorbidities. The control group (n = 30) were age and gender matched. After three months on methylphenidate, the ADHD children were retested. The control group was also retested after three months. Before treatment, ADHD children had lower scores than the control group on the tests (p ≤ 0.001) and after methylphenidate had fewer test errors than before (p ≤ 0.001). Methylphenidate treatment improves the working memory, inhibitory control and mental flexibility of ADHD boys.

CALHM1 deficiency impairs cerebral neuron activity and memory flexibility in mice.

Science.gov (United States)

Vingtdeux, Valérie; Chang, Eric H; Frattini, Stephen A; Zhao, Haitian; Chandakkar, Pallavi; Adrien, Leslie; Strohl, Joshua J; Gibson, Elizabeth L; Ohmoto, Makoto; Matsumoto, Ichiro; Huerta, Patricio T; Marambaud, Philippe

2016-04-12

CALHM1 is a cell surface calcium channel expressed in cerebral neurons. CALHM1 function in the brain remains unknown, but recent results showed that neuronal CALHM1 controls intracellular calcium signaling and cell excitability, two mechanisms required for synaptic function. Here, we describe the generation of Calhm1 knockout (Calhm1(-/-)) mice and investigate CALHM1 role in neuronal and cognitive functions. Structural analysis revealed that Calhm1(-/-) brains had normal regional and cellular architecture, and showed no evidence of neuronal or synaptic loss, indicating that CALHM1 deficiency does not affect brain development or brain integrity in adulthood. However, Calhm1(-/-) mice showed a severe impairment in memory flexibility, assessed in the Morris water maze, and a significant disruption of long-term potentiation without alteration of long-term depression, measured in ex vivo hippocampal slices. Importantly, in primary neurons and hippocampal slices, CALHM1 activation facilitated the phosphorylation of NMDA and AMPA receptors by protein kinase A. Furthermore, neuronal CALHM1 activation potentiated the effect of glutamate on the expression of c-Fos and C/EBPβ, two immediate-early gene markers of neuronal activity. Thus, CALHM1 controls synaptic activity in cerebral neurons and is required for the flexible processing of memory in mice. These results shed light on CALHM1 physiology in the mammalian brain.

Mice Overexpressing Type 1 Adenylyl Cyclase Show Enhanced Spatial Memory Flexibility in the Absence of Intact Synaptic Long-Term Depression

Science.gov (United States)

Zhang, Ming; Wang, Hongbing

2013-01-01

There is significant interest in understanding the contribution of intracellular signaling and synaptic substrates to memory flexibility, which involves new learning and suppression of obsolete memory. Here, we report that enhancement of Ca[superscript 2+]-stimulated cAMP signaling by overexpressing type 1 adenylyl cyclase (AC1) facilitated…

Functional flexible and wearable supercapacitors

International Nuclear Information System (INIS)

Huang, Yan; Zhi, Chunyi

2017-01-01

Substantial effort has been devoted to endowing flexible and wearable supercapacitors with desirable functions and solving urgent concerns regarding their practical application, particularly materials selection, air permeability, self-healability, shape memory, integration, and modularization. This gives rise to challenges with regard to both suitable materials and device fabrication. This review highlights the current state-of-the-art of these supercapacitors pertinent to materials, fabrication strategies, and performance. Challenges and solutions are also discussed to further improve their practicality. The aim of this review is to make a timely summary of this emerging field and discuss future opportunities and challenges. (topical review)

Functional flexible and wearable supercapacitors

Science.gov (United States)

Huang, Yan; Zhi, Chunyi

2017-07-01

Substantial effort has been devoted to endowing flexible and wearable supercapacitors with desirable functions and solving urgent concerns regarding their practical application, particularly materials selection, air permeability, self-healability, shape memory, integration, and modularization. This gives rise to challenges with regard to both suitable materials and device fabrication. This review highlights the current state-of-the-art of these supercapacitors pertinent to materials, fabrication strategies, and performance. Challenges and solutions are also discussed to further improve their practicality. The aim of this review is to make a timely summary of this emerging field and discuss future opportunities and challenges.

Characterization of gold nanoparticle pentacene memory device with polymer dielectric layer

International Nuclear Information System (INIS)

Kim, Hyung-Jun; Jung, Sung Mok; Kim, Yo-Han; Kim, Bong-Jin; Ha, Sanghyub; Kim, Yong-Sang; Yoon, Tae-Sik; Lee, Hyun Ho

2011-01-01

We report on the electrical behavior of gold nanoparticles (Au NPs) intervened metal-pentacene-insulator-semiconductor structures. The structure adopts polyvinyl alcohol (PVA) and pentacene as gate insulator and semiconductor, respectively. On the PVA (250 nm) film which was spin-coated and UV cross-linked, 3-aminopropyl triethoxysilane was functionalized for self assembling of the Au NPs monolayer. The devices exhibited clockwise hysteresis in their capacitance-voltage characteristics, with a memory window depending on the range of the voltage sweep. A relatively large memory window of about 4.7 V, which was deduced from control devices, was achieved with voltage sweep of (-/+)7 V. Formation of the monolayered Au NPs was confirmed by field effect scanning electron microscopy and atomic force microscopy.

'Becquerel screening' device to automatically measure activity level of contaminated soil in flexible containers

International Nuclear Information System (INIS)

Okada, Hisashi; Yamaguchi, Yoshihisa; Yamamoto, Shuji

2014-01-01

Contaminated soil and incineration ash collected during offsite decontamination work following the accident at the Fukushima Daiichi Nuclear Power Station of Tokyo Electric Power Co., Inc. is being stored in flexible containers. These containers are managed taking their activity level into account in accordance with the Decontamination Guidelines issued by the Ministry of the Environment. Toshiba has developed the 'Becquerel Screening' device that can automatically measure the activity level of the contents of each flexible container simply by placing the container on a palette, without the need to take samples for analysis from the container. The Becquerel Screening device is expected to contribute not only to improved operational efficiency but also to reduced exposure of operators to radiation, because it eliminates the need for direct contact with contaminated soil and ash. (author)

Realization of transient memory-loss with NiO-based resistive switching device

Science.gov (United States)

Hu, S. G.; Liu, Y.; Chen, T. P.; Liu, Z.; Yu, Q.; Deng, L. J.; Yin, Y.; Hosaka, Sumio

2012-11-01

A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.

Thin and flexible Ni-P based current collectors developed by electroless deposition for energy storage devices

International Nuclear Information System (INIS)

Wu, Haoran; Susanto, Amelia; Lian, Keryn

2017-01-01

Highlights: • A PET metallized by electroless nickel was developed as flexible current collector. • The Ni-PET current collector showed good conductivity and chemical stability. • The flexible nanocarbon electrodes with Ni-PET exhibited capacitive behavior. • The Ni-PET enabled electrodes performed nicely in liquid and solid supercapacitors. - Abstract: A PET film metalized by electroless nickel deposition was demonstrated as thin and flexible current collector for energy storage devices. The resultant nickel-on-PET film (Ni-PET) can be used both as current collector for electrochemical capacitors and as electrode for thin film batteries. The composition of Ni-PET was characterized by EDX and XPS. The electrochemical performance of the Ni-PET current collector was similar to Ni foil but with less hydrogen evolution at low potential. The Ni-PET film exhibited better flexibility than a metallic Ni foil. Carbon nanotubes were coated on a Ni-PET substrate to form an electrochemical capacitor electrode which exhibited high chemical stability in both liquid and solid electrolytes, showing strong promise for solid energy storage devices.

Thin and flexible Ni-P based current collectors developed by electroless deposition for energy storage devices

Energy Technology Data Exchange (ETDEWEB)

Wu, Haoran, E-mail: haoran.wu@mail.utoronto.ca; Susanto, Amelia; Lian, Keryn

2017-02-01

Highlights: • A PET metallized by electroless nickel was developed as flexible current collector. • The Ni-PET current collector showed good conductivity and chemical stability. • The flexible nanocarbon electrodes with Ni-PET exhibited capacitive behavior. • The Ni-PET enabled electrodes performed nicely in liquid and solid supercapacitors. - Abstract: A PET film metalized by electroless nickel deposition was demonstrated as thin and flexible current collector for energy storage devices. The resultant nickel-on-PET film (Ni-PET) can be used both as current collector for electrochemical capacitors and as electrode for thin film batteries. The composition of Ni-PET was characterized by EDX and XPS. The electrochemical performance of the Ni-PET current collector was similar to Ni foil but with less hydrogen evolution at low potential. The Ni-PET film exhibited better flexibility than a metallic Ni foil. Carbon nanotubes were coated on a Ni-PET substrate to form an electrochemical capacitor electrode which exhibited high chemical stability in both liquid and solid electrolytes, showing strong promise for solid energy storage devices.

Light-controlling, flexible and transparent ethanol gas sensor based on ZnO nanoparticles for wearable devices.

Science.gov (United States)

Zheng, Z Q; Yao, J D; Wang, B; Yang, G W

2015-06-16

In recent years, owing to the significant applications of health monitoring, wearable electronic devices such as smart watches, smart glass and wearable cameras have been growing rapidly. Gas sensor is an important part of wearable electronic devices for detecting pollutant, toxic, and combustible gases. However, in order to apply to wearable electronic devices, the gas sensor needs flexible, transparent, and working at room temperature, which are not available for traditional gas sensors. Here, we for the first time fabricate a light-controlling, flexible, transparent, and working at room-temperature ethanol gas sensor by using commercial ZnO nanoparticles. The fabricated sensor not only exhibits fast and excellent photoresponse, but also shows high sensing response to ethanol under UV irradiation. Meanwhile, its transmittance exceeds 62% in the visible spectral range, and the sensing performance keeps the same even bent it at a curvature angle of 90(o). Additionally, using commercial ZnO nanoparticles provides a facile and low-cost route to fabricate wearable electronic devices.

Ultra-low power, highly uniform polymer memory by inserted multilayer graphene electrode

International Nuclear Information System (INIS)

Jang, Byung Chul; Kim, Jong Yun; Koo, Beom Jun; Yang, Sang Yoon; Choi, Sung-Yool; Seong, Hyejeong; Im, Sung Gap; Kim, Sung Kyu

2015-01-01

Filament type resistive random access memory (RRAM) based on polymer thin films is a promising device for next generation, flexible nonvolatile memory. However, the resistive switching nonuniformity and the high power consumption found in the general filament type RRAM devices present critical issues for practical memory applications. Here, we introduce a novel approach not only to reduce the power consumption but also to improve the resistive switching uniformity in RRAM devices based on poly(1,3,5-trimethyl-3,4,5-trivinyl cyclotrisiloxane) by inserting multilayer graphene (MLG) at the electrode/polymer interface. The resistive switching uniformity was thereby significantly improved, and the power consumption was markedly reduced by 250 times. Furthermore, the inserted MLG film enabled a transition of the resistive switching operation from unipolar resistive switching to bipolar resistive switching and induced self-compliance behavior. The findings of this study can pave the way toward a new area of application for graphene in electronic devices. (paper)

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

Science.gov (United States)

Younis, Adnan; Chu, Dewei; Li, Sean

2015-09-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Graphene devices based on laser scribing technology

Science.gov (United States)

Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling

2018-04-01

Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures

Science.gov (United States)

Abhijith, T.; Kumar, T. V. Arun; Reddy, V. S.

2017-03-01

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO3) between two tris-(8-hydroxyquinoline)aluminum (Alq3) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 103 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO3 layer thickness and its location in the Alq3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

Methods for fabrication of flexible hybrid electronics

Science.gov (United States)

Street, Robert A.; Mei, Ping; Krusor, Brent; Ready, Steve E.; Zhang, Yong; Schwartz, David E.; Pierre, Adrien; Doris, Sean E.; Russo, Beverly; Kor, Siv; Veres, Janos

2017-08-01

Printed and flexible hybrid electronics is an emerging technology with potential applications in smart labels, wearable electronics, soft robotics, and prosthetics. Printed solution-based materials are compatible with plastic film substrates that are flexible, soft, and stretchable, thus enabling conformal integration with non-planar objects. In addition, manufacturing by printing is scalable to large areas and is amenable to low-cost sheet-fed and roll-to-roll processes. FHE includes display and sensory components to interface with users and environments. On the system level, devices also require electronic circuits for power, memory, signal conditioning, and communications. Those electronic components can be integrated onto a flexible substrate by either assembly or printing. PARC has developed systems and processes for realizing both approaches. This talk presents fabrication methods with an emphasis on techniques recently developed for the assembly of off-the-shelf chips. A few examples of systems fabricated with this approach are also described.

Effects of β-hydroxy-β-methyl butyrate on working memory and cognitive flexibility in an animal model of aging.

Science.gov (United States)

Hankosky, Emily R; Sherrill, Luke K; Ruvola, Lauren A; Haake, Rachel M; Kim, Taehyeon; Hammerslag, Lindsey R; Kougias, Daniel G; Juraska, Janice M; Gulley, Joshua M

2017-09-01

Normal aging results in cognitive decline and nutritional interventions have been suggested as potential approaches for mitigating these deficits. Here, we used rats to investigate the effects of short- and long-term dietary supplementation with the leucine metabolite β-hydroxy-β-methyl butyrate (HMB) on working memory and cognitive flexibility. Beginning ∼12 months of age, male and female Long-Evans rats were given twice daily access to sipper tubes containing calcium HMB (450 mg/kg) or vehicle (285 mg/kg calcium lactate) in a sucrose solution (20% w/v). Supplementation continued for 1 or 7 months (middle- and old-age (OA) groups, respectively) before testing began. Working memory was assessed by requiring rats to respond on a previously sampled lever following various delays. Cognitive flexibility was assessed by training rats to earn food according to a visual strategy and then, once acquired, shifting to an egocentric response strategy. Treatment with HMB improved working memory performance in middle-age (MA) males and OA rats of both sexes. In the cognitive flexibility task, there was a significant age-dependent deficit in acquisition of the visual strategy that was not apparent in OA males treated with HMB. Furthermore, HMB ameliorated an apparent deficit in visual strategy acquisition in MA females. Together, these findings suggest that daily nutritional supplementation with HMB facilitates learning and improves working memory performance. As such, HMB supplementation may mitigate age-related cognitive deficits and may therefore be an effective tool to combat this undesirable feature of the aging process.

Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

Science.gov (United States)

Hyun, Seung; Kwon, Owoong; Lee, Bom-Yi; Seol, Daehee; Park, Beomjin; Lee, Jae Yong; Lee, Ju Hyun; Kim, Yunseok; Kim, Jin Kon

2016-01-01

Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07377d

Device and methods for writing and erasing analog information in small memory units via voltage pulses

Science.gov (United States)

El Gabaly Marquez, Farid; Talin, Albert Alec

2018-04-17

Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

Feasibility study of molecular memory device based on DNA using methylation to store information

Energy Technology Data Exchange (ETDEWEB)

Jiang, Liming; Al-Dirini, Feras [Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010 (Australia); Center for Neural Engineering (CfNE), The University of Melbourne, Carlton 3053 (Australia); National ICT Australia, The University of Melbourne, Parkville 3010 (Australia); Qiu, Wanzhi; Skafidas, Efstratios, E-mail: sskaf@unimelb.edu.au [Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010 (Australia); Center for Neural Engineering (CfNE), The University of Melbourne, Carlton 3053 (Australia); Hossain, Faruque M. [Center for Neural Engineering (CfNE), The University of Melbourne, Carlton 3053 (Australia); Evans, Robin [Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010 (Australia)

2016-07-14

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibrium Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.

Feasibility study of molecular memory device based on DNA using methylation to store information

International Nuclear Information System (INIS)

Jiang, Liming; Al-Dirini, Feras; Qiu, Wanzhi; Skafidas, Efstratios; Hossain, Faruque M.; Evans, Robin

2016-01-01

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibrium Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

Science.gov (United States)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Counterbalancing of morphology and conductivity of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate based flexible devices.

Science.gov (United States)

Jang, Woongsik; Ahn, Sunyong; Park, Soyun; Park, Jong Hyeok; Wang, Dong Hwan

2016-12-01

The importance of conductive polymer electrodes with a balance between the morphology and electrical conductivity for flexible organic photovoltaic properties has been demonstrated. Highly transparent PEDOT:PSS anodes with controlled conductivity and surface properties were realized by insertion of dimethyl sulfoxide (DMSO) and a fluorosurfactant (Zonyl) as efficient additives and used for flexible organic photovoltaic cells (OPVs) which are based on a bulk-heterojunction of polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7):[6,6]phenyl-C 71 -butyric acid methyl ester (PC 71 BM). We investigated the correlation between the electrical properties of PEDOT:PSS electrodes and their influences on the surface morphology of the active materials (PTB7:PC 71 BM). When the device was prepared from the PEDOT:PSS layer functioning as an anode of OPV through an optimized ratio of 5 vol% of DMSO and 0.1 wt% of fluorosurfactant, the devices exhibited improved fill factor (FF) due to the enhanced coverage of PEDOT:PSS films. These results correlate with reduced photoluminescence and increased charge extraction as seen through Raman spectroscopy and electrical analysis, respectively. The conductive polymer electrode with the balance between the morphology and electrical conductivity can be a useful replacement for brittle electrodes such as those made of indium tin oxide (ITO) as they are more resistant to cracking and bending conditions, which will contribute to the long-term operation of flexible devices.

Wearable, Flexible, and Multifunctional Healthcare Device with an ISFET Chemical Sensor for Simultaneous Sweat pH and Skin Temperature Monitoring.

Science.gov (United States)

Nakata, Shogo; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2017-03-24

Real-time daily healthcare monitoring may increase the chances of predicting and diagnosing diseases in their early stages which, currently, occurs most frequently during medical check-ups. Next-generation noninvasive healthcare devices, such as flexible multifunctional sensor sheets designed to be worn on skin, are considered to be highly suitable candidates for continuous real-time health monitoring. For healthcare applications, acquiring data on the chemical state of the body, alongside physical characteristics such as body temperature and activity, are extremely important for predicting and identifying potential health conditions. To record these data, in this study, we developed a wearable, flexible sweat chemical sensor sheet for pH measurement, consisting of an ion-sensitive field-effect transistor (ISFET) integrated with a flexible temperature sensor: we intend to use this device as the foundation of a fully integrated, wearable healthcare patch in the future. After characterizing the performance, mechanical flexibility, and stability of the sensor, real-time measurements of sweat pH and skin temperature are successfully conducted through skin contact. This flexible integrated device has the potential to be developed into a chemical sensor for sweat for applications in healthcare and sports.

Growth of Si nanocrystals on alumina and integration in memory devices

Science.gov (United States)

Baron, T.; Fernandes, A.; Damlencourt, J. F.; De Salvo, B.; Martin, F.; Mazen, F.; Haukka, S.

2003-06-01

We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm-2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.

Functional neuroimaging correlates of thinking flexibility and knowledge structure in memory: Exploring the relationships between clinical reasoning and diagnostic thinking.

Science.gov (United States)

Durning, Steven J; Costanzo, Michelle E; Beckman, Thomas J; Artino, Anthony R; Roy, Michael J; van der Vleuten, Cees; Holmboe, Eric S; Lipner, Rebecca S; Schuwirth, Lambert

2016-06-01

Diagnostic reasoning involves the thinking steps up to and including arrival at a diagnosis. Dual process theory posits that a physician's thinking is based on both non-analytic or fast, subconscious thinking and analytic thinking that is slower, more conscious, effortful and characterized by comparing and contrasting alternatives. Expertise in clinical reasoning may relate to the two dimensions measured by the diagnostic thinking inventory (DTI): memory structure and flexibility in thinking. Explored the functional magnetic resonance imaging (fMRI) correlates of these two aspects of the DTI: memory structure and flexibility of thinking. Participants answered and reflected upon multiple-choice questions (MCQs) during fMRI. A DTI was completed shortly after the scan. The brain processes associated with the two dimensions of the DTI were correlated with fMRI phases - assessing flexibility in thinking during analytical clinical reasoning, memory structure during non-analytical clinical reasoning and the total DTI during both non-analytical and analytical reasoning in experienced physicians. Each DTI component was associated with distinct functional neuroanatomic activation patterns, particularly in the prefrontal cortex. Our findings support diagnostic thinking conceptual models and indicate mechanisms through which cognitive demands may induce functional adaptation within the prefrontal cortex. This provides additional objective validity evidence for the use of the DTI in medical education and practice settings.

Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

Science.gov (United States)

Al-Amody, Fuad H.

This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

Organic ferroelectric memory devices with inkjet-printed polymer electrodes on flexible substrates

KAUST Repository

Bhansali, Unnat Sampatraj; Khan, Yasser; Alshareef, Husam N.

2013-01-01

c) = 55 MV/m and a peak capacitance density of 45 nF/cm2. Our polarization fatigue measurements show that these devices retain ∼100% and 45% of their initial Pr values after 103 and 10 5 stress cycles, respectively. The overall performance

LDPC Decoding on GPU for Mobile Device

Directory of Open Access Journals (Sweden)

Yiqin Lu

2016-01-01

Full Text Available A flexible software LDPC decoder that exploits data parallelism for simultaneous multicode words decoding on the mobile device is proposed in this paper, supported by multithreading on OpenCL based graphics processing units. By dividing the check matrix into several parts to make full use of both the local memory and private memory on GPU and properly modify the code capacity each time, our implementation on a mobile phone shows throughputs above 100 Mbps and delay is less than 1.6 millisecond in decoding, which make high-speed communication like video calling possible. To realize efficient software LDPC decoding on the mobile device, the LDPC decoding feature on communication baseband chip should be replaced to save the cost and make it easier to upgrade decoder to be compatible with a variety of channel access schemes.

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Science.gov (United States)

Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

2016-09-01

Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

Energy Technology Data Exchange (ETDEWEB)

Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

2014-04-15

Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

Memory device sensitivity trends in aircraft's environment

International Nuclear Information System (INIS)

Bouchet, T.; Fourtine, S.; Calvet, M.C.

1999-01-01

The authors present the SEU (single event upset) sensitivity of 31 SRAM (static random access memory) and 8 DRAM (dynamic random access memory) according to their technologies. 2 methods have been used to compute the SEU rate: the NCS (neutron cross section) method and the BGR (burst generation rate) method, the physics data required by both methods have been either found in scientific literature or directly measured. The use of new technologies implies a quicker time response through a dramatic reduction of chip size and of the amount of energy representing 1 bit. The reduction of size makes less particles are likely to interact with the chip but the reduction of the critical charge implies that these interactions are more likely to damage the chip. The SEU sensitivity is then parted between these 2 opposed trends. Results show that for technologies beyond 0,18 μm these 2 trends balance roughly. Nevertheless the feedback experience shows that the number of errors is increasing. This is due to the fact that avionics requires more and more memory to perform numerical functions, the number of bits is increasing so is the risk of errors. As far as SEU is concerned, RAM devices are less and less sensitive comparatively for 1 bit, and DRAM seem to be less sensitive than SRAM. (A.C.)

Conditional bistability, a generic cellular mnemonic mechanism for robust and flexible working memory computations.

Science.gov (United States)

Rodriguez, Guillaume; Sarazin, Matthieu; Clemente, Alexandra; Holden, Stephanie; Paz, Jeanne T; Delord, Bruno

2018-04-30

Persistent neural activity, the substrate of working memory, is thought to emerge from synaptic reverberation within recurrent networks. However, reverberation models do not robustly explain fundamental dynamics of persistent activity, including high-spiking irregularity, large intertrial variability, and state transitions. While cellular bistability may contribute to persistent activity, its rigidity appears incompatible with persistent activity labile characteristics. Here, we unravel in a cellular model a form of spike-mediated conditional bistability that is robust, generic and provides a rich repertoire of mnemonic computations. Under asynchronous synaptic inputs of the awakened state, conditional bistability generates spiking/bursting episodes, accounting for the irregularity, variability and state transitions characterizing persistent activity. This mechanism has likely been overlooked because of the sub-threshold input it requires and we predict how to assess it experimentally. Our results suggest a reexamination of the role of intrinsic properties in the collective network dynamics responsible for flexible working memory. SIGNIFICANCE STATEMENT This study unravels a novel form of intrinsic neuronal property, i.e. conditional bistability. We show that, thanks of its conditional character, conditional bistability favors the emergence of flexible and robust forms of persistent activity in PFC neural networks, in opposition to previously studied classical forms of absolute bistability. Specifically, we demonstrate for the first time that conditional bistability 1) is a generic biophysical spike-dependent mechanism of layer V pyramidal neurons in the PFC and that 2) it accounts for essential neurodynamical features for the organisation and flexibility of PFC persistent activity (the large irregularity and intertrial variability of the discharge and its organization under discrete stable states), which remain unexplained in a robust fashion by current models

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

International Nuclear Information System (INIS)

Linn, E; Ferch, S; Waser, R; Menzel, S

2013-01-01

Dynamic physics-based models of resistive switching devices are of great interest for the realization of complex circuits required for memory, logic and neuromorphic applications. Here, we apply such a model of an electrochemical metallization (ECM) cell to complementary resistive switches (CRSs), which are favorable devices to realize ultra-dense passive crossbar arrays. Since a CRS consists of two resistive switching devices, it is straightforward to apply the dynamic ECM model for CRS simulation with MATLAB and SPICE, enabling study of the device behavior in terms of sweep rate and series resistance variations. Furthermore, typical memory access operations as well as basic implication logic operations can be analyzed, revealing requirements for proper spike and level read operations. This basic understanding facilitates applications of massively parallel computing paradigms required for neuromorphic applications. (paper)

Bacterial cellulose membrane as flexible substrate for organic light emitting devices

International Nuclear Information System (INIS)

Legnani, C.; Vilani, C.; Calil, V.L.; Barud, H.S.; Quirino, W.G.; Achete, C.A.; Ribeiro, S.J.L.; Cremona, M.

2008-01-01

Bacterial cellulose (BC) membranes produced by gram-negative, acetic acid bacteria (Gluconacetobacter xylinus), were used as flexible substrates for the fabrication of Organic Light Emitting Diodes (OLED). In order to achieve the necessary conductive properties indium tin oxide (ITO) thin films were deposited onto the membrane at room temperature using radio frequency (r.f.) magnetron sputtering with an r.f. power of 30 W, at pressure of 8 mPa in Ar atmosphere without any subsequent thermal treatment. Visible light transmittance of about 40% was observed. Resistivity, mobility and carrier concentration of deposited ITO films were 4.90 x 10 -4 Ohm cm, 8.08 cm 2 /V-s and - 1.5 x 10 21 cm -3 , respectively, comparable with commercial ITO substrates. In order to demonstrate the feasibility of devices based on BC membranes three OLEDs with different substrates were produced: a reference one with commercial ITO on glass, a second one with a SiO 2 thin film interlayer between the BC membrane and the ITO layer and a third one just with ITO deposited directly on the BC membrane. The observed OLED luminance ratio was: 1; 0.5; 0.25 respectively, with 2400 cd/m 2 as the value for the reference OLED. These preliminary results show clearly that the functionalized biopolymer, biodegradable, biocompatible bacterial cellulose membranes can be successfully used as substrate in flexible organic optoelectronic devices

Enhanced lifetime characteristics in flexible polymer light-emitting devices by encapsulation of epoxy/silica-coated gold nanoparticles resin (ESGR)

International Nuclear Information System (INIS)

Chiu, Pin-Hsiang; Huang, Chien-Jung; Yang, Cheng-Fu; Meen, Teen-Hang; Wang, Yeong-Her

2010-01-01

This paper reports the effects of a new multilayer encapsulation for the lifetime of flexible PLEDs on plastic substrate. The multilayer encapsulation consisted of a novel epoxy/silica-coated gold nanoparticles resin (ESGR) as the pre-encapsulation layer and a SiO 2 layer as the encapsulation cap. The ESGR was prepared by mixing UV-curable epoxy resin and powders of silica-coated gold nanoparticles. The silica-coated gold nanoparticles is a necessity because the epoxy resin is not a good moisture barrier. The flexible PLEDs with multilayer encapsulation exhibited no dark spots after being stored for over 300 h at 25 deg. C and 60% relative humidity. Also, the operational half-luminance decay time of device was 1360 h, seven times longer than that of a device without encapsulation. These results confirmed that the multilayer encapsulation, which restricted the moisture that penetrated into the devices, could be applied to the encapsulation of flexible PLEDs.

A study of the kinematic characteristic of a coupling device between the buffer system and the flexible pipe of a deep-seabed mining system

Directory of Open Access Journals (Sweden)

Oh Jae-Won

2014-09-01

Full Text Available This paper concerns the kinematic characteristics of a coupling device in a deep-seabed mining system. This coupling device connects the buffer system and the flexible pipe. The motion of the buffer system, flexible pipe and mining robot are affected by the coupling device. So the coupling device should be considered as a major factor when this device is designed. Therefore, we find a stable kinematic device, and apply it to the design coupling device through this study. The kinematic characteristics of the coupling device are analyzed by multi-body dynamics simulation method, and finite element method. The dynamic analysis model was built in the commercial software DAFUL. The Fluid Structure Interaction (FSI method is applied to build the deep-seabed environment. Hydrodynamic force and moment are applied in the dynamic model for the FSI method. The loads and deformation of flexible pipe are estimated for analysis results of the kinematic characteristics

A study of the kinematic characteristic of a coupling device between the buffer system and the flexible pipe of a deep-seabed mining system

Directory of Open Access Journals (Sweden)

Jae-Won Oh

2014-09-01

Full Text Available This paper concerns the kinematic characteristics of a coupling device in a deep-seabed mining system. This coupling device connects the buffer system and the flexible pipe. The motion of the buffer system, flexible pipe and mining robot are affected by the coupling device. So the coupling device should be considered as a major factor when this device is designed. Therefore, we find a stable kinematic device, and apply it to the design coupling device through this study. The kinematic characteristics of the coupling device are analyzed by multi-body dynamics simulation method, and finite element method. The dynamic analysis model was built in the commercial software DAFUL. The Fluid Structure Interaction (FSI method is applied to build the deep-seabed environment. Hydrodynamic force and moment are applied in the dynamic model for the FSI method. The loads and deformation of flexible pipe are estimated for analysis results of the kinematic characteristics.

The influence of Ti doping and annealing on Ce_2Ti_2O_7 flash memory devices

International Nuclear Information System (INIS)

Kao, Chyuan Haur; Chen, Su Zhien; Luo, Yang; Chiu, Wang Ting; Chiu, Shih Wei; Chen, I Chien; Lin, Chan-Yu; Chen, Hsiang

2017-01-01

Highlights: • Ce_2Ti_2O_7 flash memories have been fabricated. • Material quality can be improved by annealing. • The memory performance can be enhanced by Ti doping. • Ti doping and annealing can reinforce crystallization. - Abstract: In this research, a CeO_2 film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce_2Ti_2O_7 trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce_2Ti_2O_7-based memory device is promising for future industrial flash memory applications.

A Novel Implementation of a Flexible Robotic Fin Actuated by Shape Memory Alloy

Institute of Scientific and Technical Information of China (English)

Qin Yan; Lei Wang; Bo Liu; Jie Yang; Shiwu Zhang

2012-01-01

In this paper,study of a novel flexible robotic-fin actuated by Shape Memory Alloy (SMA) is presented.The developed robotic fin is capable of implementing various 3-Dimensional (3D) motions,which plays an important role in robot propulsion and maneuverability.Firstly,the morphological and mechanics parameters of a real pectoral fin from a carp are investigated.Secondly,a detailed design of the flexible pectoral fin driven by SMA is presented according to the previous morphological and mechanics analyses.Thirdly,a simplified theoretical model on the SMA fin plate is derived.The thermodynamics of the SMA plate and the relationship between curvature and phase transformation are analyzed.Finally,several simulations and model experiments are conducted according to the previous analyses.The results of the experiments are useful for the control of the robotic fin.The experimental results reveal that the SMA actuated fin ray has a good actuating performance.

Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

Directory of Open Access Journals (Sweden)

W. J. Liu

2016-01-01

Full Text Available We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

Flexible robotic entry device for a nuclear materials production reactor

International Nuclear Information System (INIS)

Heckendorn, F.M. II.

1988-01-01

The Savannah River Laboratory has developed and is implementing a flexible robotic entry device (FRED) for the nuclear materials production reactors now operating at the Savannah River Plant (SRP). FRED is designed for rapid deployment into confinement areas of operating reactors to assess unknown conditions. A unique smart tether method has been incorporated into FRED for simultaneous bidirectional transmission of multiple video/audio/control/power signals over a single coaxial cable. This system makes it possible to use FRED under all operating and standby conditions, including those where radio/microwave transmissions are not possible or permitted, and increases the quantity of data available

Application of complex programmable logic devices in memory radiation effects test system

International Nuclear Information System (INIS)

Li Yonghong; He Chaohui; Yang Hailiang; He Baoping

2005-01-01

The application of the complex programmable logic device (CPLD) in electronics is emphatically discussed. The method of using software MAX + plus II and CPLD are introduced. A new test system for memory radiation effects is established by using CPLD devices-EPM7128C84-15. The old test system's function are realized and, moreover, a number of small scale integrated circuits are reduced and the test system's reliability is improved. (authors)

Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

Science.gov (United States)

Tu, Hongen

This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high

Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

International Nuclear Information System (INIS)

Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

2016-01-01

Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

Stress-corrosion cracking of indium tin oxide coated polyethylene terephthalate for flexible optoelectronic devices

International Nuclear Information System (INIS)

Sierros, Konstantinos A.; Morris, Nicholas J.; Ramji, Karpagavalli; Cairns, Darran R.

2009-01-01

Stress corrosion cracking of transparent conductive layers of indium tin oxide (ITO), sputtered on polyethylene terephthalate (PET) substrates, is an issue of paramount importance in flexible optoelectronic devices. These components, when used in flexible device stacks, can be in contact with acid containing pressure-sensitive adhesives or with conductive polymers doped in acids. Acids can corrode the brittle ITO layer, stress can cause cracking and delamination, and stress-corrosion cracking can cause more rapid failure than corrosion alone. The combined effect of an externally-applied mechanical stress to bend the device and the corrosive environment provided by the acid is investigated in this work. We show that acrylic acid which is contained in many pressure-sensitive adhesives can cause corrosion of ITO coatings on PET. We also investigate and report on the combined effect of external mechanical stress and corrosion on ITO-coated PET composite films. Also, it is shown that the combination of stress and corrosion by acrylic acid can cause ITO cracking to occur at stresses less than a quarter of those needed for failure with no corrosion. In addition, the time to failure, under ∼ 1% tensile strain can reduce the total time to failure by as much as a third

Unusual magnetic behavior in a chiral-based magnetic memory device

Energy Technology Data Exchange (ETDEWEB)

Ben-Dor, Oren; Yochelis, Shira [Department of Applied Physics, Center of Nanoscience and Nanotechnology, Hebrew University, Jerusalem 91904 (Israel); Felner, Israel, E-mail: Israel.felner@mail.huij.ac.il [“Racah” Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Paltiel, Yossi [Department of Applied Physics, Center of Nanoscience and Nanotechnology, Hebrew University, Jerusalem 91904 (Israel)

2016-01-15

In recent years chiral molecules were found to act as efficient spin filters. Using a multilayer structure with chiral molecules magnetic memory was realized. Observed rare magnetic phenomena in a chiral-based magnetic memory device was reported by O-Ben Dor et. al in Nature Commun, 4, 2256 (2013). This multi-layered device is built from α-helix L-polyalanine (AHPA-L) adsorbed on gold, Al{sub 2}O{sub 3} (7 nm) and Ni (30 nm) layers. It was shown that certain temperature range the FC branch crosses the magnetic peak (at 55 K) observed in the ZFC curve thus ZFC>FC. We show here that in another similar multi-layered material, at low applied field, the ZFC curve lies above the FC one up to 70 K. The two features have the same origin and the crucial necessary components to exhibit them are: AHPA-L and 30 nm Ni layered thick. Similar effects were also reported in sulfur doped amorphous carbon. A comparison between the two systems and the ingredients for these peculiar observations is discussed. - Highlights: • The highlights of the present manuscript is the peculiar magnetic behavior observed in a multilayer structure with chiral molecules, magnetic memory. • It is shown that certain temperature range the FC branch crosses the magnetic peak (at 55 K) observed in the ZFC curve thus ZFC>FC. • Similar effects were also reported in sulfur doped amorphous carbon.

Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

International Nuclear Information System (INIS)

Gayathri, A.G.; Joseph, C.M.

2016-01-01

Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

Energy Technology Data Exchange (ETDEWEB)

Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

2016-09-15

Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

Flexibility of representational states in working memory

Directory of Open Access Journals (Sweden)

Nahid eZokaei

2014-11-01

Full Text Available The relationship between working memory (WM and attention is a highly interdependent one, with evidence that attention determines the state in which items in WM are retained. Through focusing of attention, an item might be held in a more prioritized state, commonly termed as the focus of attention (FOA. The remaining items, although still retrievable, are considered to be in a different representational state. One means to bring an item into the FOA is to use retrospective cues (‘retro-cues’ which direct attention to one of the objects retained in WM. Alternatively, an item can enter a privileged state once attention is directed towards it through bottom-up influences (e.g. recency effect or by performing an action on one of the retained items (‘incidental’ cueing. In all these cases, the item in the FOA is recalled with better accuracy compared to the other items in WM. Far less is known about the nature of the other items in WM and whether they can be flexibly manipulated in and out of the FOA. We present data from three types of experiments as well as transcranial magnetic stimulation to early visual cortex to manipulate the item inside FOA. Taken together, our results suggest that the context in which items are retained in WM matters. When an item remains behaviourally relevant, despite not being inside the FOA, re-focusing attention upon it can increase its recall precision. This suggests that a non-FOA item can be held in a state in which it can be later retrieved. However, if an item is rendered behaviourally unimportant because it is very unlikely to be probed, it cannot be brought back into the FOA, nor recalled with high precision. Under such conditions, some information appears to be irretrievably lost from WM. These findings, obtained from several different methods, demonstrate quite considerable flexibility with which items in WM can be represented depending upon context. They have important consequences for emerging state

Flexible magnetoimpidence sensor

KAUST Repository

Kavaldzhiev, Mincho

2015-05-01

Recently, flexible electronic devices have attracted increasing interest, due to the opportunities they promise for new applications such as wearable devices, where the components are required to flex during normal use[1]. In this light, different magnetic sensors, like microcoil, spin valve, giant magnetoresistance (GMR), magnetoimpedance (MI), have been studied previously on flexible substrates.

Chemical insight into origin of forming-free resistive random-access memory devices

KAUST Repository

Wu, X.; Fang, Z.; Li, K.; Bosman, M.; Raghavan, N.; Li, X.; Yu, H. Y.; Singh, N.; Lo, G. Q.; Zhang, Xixiang; Pey, K. L.

2011-01-01

We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

Science.gov (United States)

Chen, C.; Gao, S.; Zeng, F.; Tang, G. S.; Li, S. Z.; Song, C.; Fu, H. D.; Pan, F.

2013-07-01

Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

International Nuclear Information System (INIS)

Kim, Seonghyun; Park, Jubong; Jung, Seungjae; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang; Lee, Daeseok; Woo, Jiyong; Choi, Godeuni

2012-01-01

In this study, we propose a new and effective methodology for improving the resistive-switching performance of memory devices by high-pressure hydrogen annealing under ambient conditions. The reduction effect results in the uniform creation of oxygen vacancies that in turn enable forming-free operation and afford uniform switching characteristics. In addition, H + and mobile hydroxyl (OH − ) ions are generated, and these induce fast switching operation due to the higher mobility compared to oxygen ions. Defect engineering, specifically, the introduction of hydrogen atom impurities, improves the device performance for metal–oxide-based resistive-switching random access memory devices. (paper)

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

Science.gov (United States)

Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

2018-01-01

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these

Empirical study of the metal-nitride-oxide-semiconductor device characteristics deduced from a microscopic model of memory traps

International Nuclear Information System (INIS)

Ngai, K.L.; Hsia, Y.

1982-01-01

A graded-nitride gate dielectric metal-nitride-oxide-semiconductor (MNOS) memory transistor exhibiting superior device characteristics is presented and analyzed based on a qualitative microscopic model of the memory traps. The model is further reviewed to interpret some generic properties of the MNOS memory transistors including memory window, erase-write speed, and the retention-endurance characteristic features

Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

KAUST Repository

Rojas, Jhonathan Prieto

2013-10-01

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Fábio F. Vidor

2015-07-01

Full Text Available Flexible and transparent electronics have been studied intensively during the last few decades. The technique establishes the possibility of fabricating innovative products, from flexible displays to radio-frequency identification tags. Typically, large-area polymeric substrates such as polypropylene (PP or polyethylene terephthalate (PET are used, which produces new requirements for the integration processes. A key element for flexible and transparent electronics is the thin-film transistor (TFT, as it is responsible for the driving current in memory cells, digital circuits or organic light-emitting devices (OLEDs. In this paper, we discuss some fundamental concepts of TFT technology. Additionally, we present a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics. Moreover, a technique for integration with a submicron resolution suitable for glass and foil substrates is presented.

Architecture and performance of radiation-hardened 64-bit SOS/MNOS memory

International Nuclear Information System (INIS)

Kliment, D.C.; Ronen, R.S.; Nielsen, R.L.; Seymour, R.N.; Splinter, M.R.

1976-01-01

This paper discusses the circuit architecture and performance of a nonvolatile 64-bit MNOS memory fabricated on silicon on sapphire (SOS). The circuit is a test vehicle designed to demonstrate the feasibility of a high-performance, high-density, radiation-hardened MNOS/SOS memory. The array is organized as 16 words by 4 bits and is fully decoded. It utilizes a two-(MNOS) transistor-per-bit cell and differential sensing scheme and is realized in PMOS static resistor load logic. The circuit was fabricated and tested as both a fast write random access memory (RAM) and an electrically alterable read only memory (EAROM) to demonstrate design and process flexibility. Discrete device parameters such as retention, circuit electrical characteristics, and tolerance to total dose and transient radiation are presented

InAs quantum dots as charge storing elements for applications in flash memory devices

Energy Technology Data Exchange (ETDEWEB)

Islam, Sk Masiul; Biswas, Pranab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India)

2015-08-15

Graphical abstract: - Highlights: • Catalyst-free growth of InAs quantum dots was carried out on high-k ZrO{sub 2}. • Memory device with InAs quantum dots as charge storage nodes are fabricated. • Superior memory window, low leakage and reasonably good retention were observed. • Carrier transport phenomena are explained in both program and erase operations. - Abstract: InAs quantum dots (QDs) were grown by metal organic chemical vapor deposition technique to use them as charge storage nodes. Uniform QDs were formed with average diameter 5 nm and height 5–10 nm with a density of 2 × 10{sup 11} cm{sup −2}. The QDs were grown on high-k dielectric layer (ZrO{sub 2}), which was deposited onto ultra-thin GaP passivated p-GaAs (1 0 0) substrate. A charge storage device with the structure Metal/ZrO{sub 2}/InAs QDs/ZrO{sub 2}/(GaP)GaAs/Metal was fabricated. The devices containing InAs QDs exhibit superior memory window, low leakage current density along with reasonably good charge retention. A suitable electronic band diagram corresponding to programming and erasing operations was proposed to explain the operation.

Towards an Artificial Phonological Loop: An Assistive Device for Working Memory and Attentional Control

Directory of Open Access Journals (Sweden)

D. Bogen

2006-01-01

Full Text Available We describe the initial development of an artificial phonological loop (APL, a new technology to assist individuals with impairment of the working memory system. The phonological loop, along with the visuospatial sketchpad, is one of the two slave short-term memory subsystems that comprise working memory, a cognitive function closely associated with the control of attention. In the phonological loop, phonological (speech information lasting for 1–2 second is maintained active by repetitive, subvocal (silent speech rehearsal. Deficits in working memory, specifically in the phonological loop, occur in many disorders, including attention-deficit disorder and Alzheimer’s disease. In these disorders, it appears that the ability for phonological rehearsal is intact, but the regulation or triggering of the rehearsal process is inadequate, thus causing the contents of working memory to be lost. The purpose, then, of the APL is to facilitate the phonological loop by artificially extending the duration of phonological rehearsals. The APL mimics the natural phonological loop by providing audible vocal echoes to take the place of subvocal rehearsals. In this system, the user talks to him/herself in short (1–2 second phrases; the device records these phrases, stores them in electronic memory, and then repeats— i.e., echoes—the phrases multiple times over an extended period. Two versions of this device have been developed: the Echo-APL and the Rearticulation-APL. In the Echo-APL, only echoing is involved. In the Rearticulation-APL, however, the user re-vocalizes (rearticulates the phrase in response to an audible cue. The device repeats the cue until it detects (hears the re-vocalization. Future research and development of the APL will require extensive testing and careful evaluation of possible echo-schedules: the predefined program controlling inter-echo time intervals and echo-amplitude (echo loudness. The APL essentially exteriorizes the silent

Basic performance tests on vibration of support structure with flexible plates for ITER tokamak device

International Nuclear Information System (INIS)

Takeda, Nobukazu; Kakudate, Satoshi; Shibanuma, Kiyoshi

2005-01-01

The vibration experiments of the support structures with flexible plates for the ITER major components such as toroidal field coil (TF coil) and vacuum vessel (VV) were performed using small-sized flexible plates aiming to obtain its basic mechanical characteristics such as dependence of the stiffness on the loading angle. The experimental results obtained by the hammering and frequency sweep tests were agreed each other, so that the experimental method is found to be reliable. In addition, the experimental results were compared with the analytical ones in order to estimate an adequate analytical model for ITER support structure with flexible plates. As a result, the bolt connection of the flexible plates on the base plate strongly affected on the stiffness of the flexible plates. After studies of modeling the bolts, it is found that the analytical results modeling the bolts with finite stiffness only in the axial direction and infinite stiffness in the other directions agree well with the experimental ones. Using this adequate model, the stiffness of the support structure with flexible plates for the ITER major components can be calculated precisely in order to estimate the dynamic behaviors such as eigen modes and amplitude of deformation of the major components of the ITER tokamak device. (author)

Memory Device and Nanofabrication Techniques Using Electrically Configurable Materials

Science.gov (United States)

Ascenso Simões, Bruno

Development of novel nanofabrication techniques and single-walled carbon nanotubes field configurable transistor (SWCNT-FCT) memory devices using electrically configurable materials is presented. A novel lithographic technique, electric lithography (EL), that uses electric field for pattern generation has been demonstrated. It can be used for patterning of biomolecules on a polymer surface and patterning of resist as well. Using electrical resist composed of a polymer having Boc protected amine group and iodonium salt, Boc group on the surface of polymer was modified to free amine by applying an electric field. On the modified surface of the polymer, Streptavidin pattern was fabricated with a sub-micron scale. Also patterning of polymer resin composed of epoxy monomers and diaryl iodonium salt by EL has been demonstrated. Reaction mechanism for electric resist configuration is believed to be induced by an acid generation via electrochemical reduction in the resist. We show a novel field configurable transistor (FCT) based on single-walled carbon nanotube network field-effect transistors in which poly (ethylene glycol) crosslinked by electron-beam is incorporated into the gate. The device conductance can be configured to arbitrary states reversibly and repeatedly by applying external gate voltages. Raman spectroscopy revealed that evolution of the ratio of D- to G-band intensity in the SWCNTs of the FCT progressively increases as the device is configured to lower conductance states. Electron transport studies at low temperatures showed a strong temperature dependence of the resistance. Band gap widening of CNTs up to ˜ 4 eV has been observed by examining the differential conductance-gate voltage-bias voltage relationship. The switching mechanism of the FCT is attributed a structural transformation of CNTs via reversible hydrogenation and dehydrogenations induced by gate voltages, which tunes the CNT bandgap continuously and reversibly to non-volatile analog values

Towards flexible solid-state supercapacitors for smart and wearable electronics.

Science.gov (United States)

Dubal, Deepak P; Chodankar, Nilesh R; Kim, Do-Heyoung; Gomez-Romero, Pedro

2018-03-21

Flexible solid-state supercapacitors (FSSCs) are frontrunners in energy storage device technology and have attracted extensive attention owing to recent significant breakthroughs in modern wearable electronics. In this study, we review the state-of-the-art advancements in FSSCs to provide new insights on mechanisms, emerging electrode materials, flexible gel electrolytes and novel cell designs. The review begins with a brief introduction on the fundamental understanding of charge storage mechanisms based on the structural properties of electrode materials. The next sections briefly summarise the latest progress in flexible electrodes (i.e., freestanding and substrate-supported, including textile, paper, metal foil/wire and polymer-based substrates) and flexible gel electrolytes (i.e., aqueous, organic, ionic liquids and redox-active gels). Subsequently, a comprehensive summary of FSSC cell designs introduces some emerging electrode materials, including MXenes, metal nitrides, metal-organic frameworks (MOFs), polyoxometalates (POMs) and black phosphorus. Some potential practical applications, such as the development of piezoelectric, photo-, shape-memory, self-healing, electrochromic and integrated sensor-supercapacitors are also discussed. The final section highlights current challenges and future perspectives on research in this thriving field.

Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

Science.gov (United States)

Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

2016-04-01

The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

Electrical and optical characteristics of heterojunction devices composed of silicon nanowires and mercury selenide nanoparticle films on flexible plastics.

Science.gov (United States)

Yeo, Minje; Yun, Junggwon; Kim, Sangsig

2013-09-01

A pn heterojunction device based on p-type silicon (Si) nanowires (NWs) prepared by top-down method and n-type mercury selenide (HgSe) nanoparticles (NPs) synthesized by the colloidal method have been fabricated on a flexible plastic substrate. The synthesized HgSe NPs were analyzed through the effective mass approximation. The characteristics of the heterojunction device were examined and studied with the energy band diagram. The device showed typical diode characteristics with a turn-on voltage of 1.5 V and exhibited a high rectification ratio of 10(3) under relatively low forward bias. Under illumination of 633-nm-wavelength light, the device presented photocurrent efficiency of 117.5 and 20.1 nA/W under forward bias and reverse bias conditions, respectively. Moreover, the photocurrent characteristics of the device have been determined by bending of the plastic substrate upward and downward with strain of 0.8%. Even though the photocurrent efficiency has fluctuations during the bending cycles, the values are roughly maintained for 10(4) bending cycles. This result indicates that the fabricated heterojunction device has the potential to be applied as fundamental elements of flexible nanoelectronics.

21 CFR 886.1390 - Flexible diagnostic Fresnel lens.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Flexible diagnostic Fresnel lens. 886.1390 Section... (CONTINUED) MEDICAL DEVICES OPHTHALMIC DEVICES Diagnostic Devices § 886.1390 Flexible diagnostic Fresnel lens. (a) Identification. A flexible diagnostic Fresnel lens is a device that is a very thin lens which has...

Shape memory polymer medical device

Science.gov (United States)

Maitland, Duncan [Pleasant Hill, CA; Benett, William J [Livermore, CA; Bearinger, Jane P [Livermore, CA; Wilson, Thomas S [San Leandro, CA; Small, IV, Ward; Schumann, Daniel L [Concord, CA; Jensen, Wayne A [Livermore, CA; Ortega, Jason M [Pacifica, CA; Marion, III, John E.; Loge, Jeffrey M [Stockton, CA

2010-06-29

A system for removing matter from a conduit. The system includes the steps of passing a transport vehicle and a shape memory polymer material through the conduit, transmitting energy to the shape memory polymer material for moving the shape memory polymer material from a first shape to a second and different shape, and withdrawing the transport vehicle and the shape memory polymer material through the conduit carrying the matter.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

Science.gov (United States)

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

Plasma processing of soft materials for development of flexible devices

International Nuclear Information System (INIS)

Setsuhara, Yuichi; Cho, Ken; Takenaka, Kosuke; Shiratani, Masaharu; Sekine, Makoto; Hori, Masaru

2011-01-01

Plasma-polymer interactions have been studied as a basis for development of next-generation processing of flexible devices with soft materials by means of low-damage plasma technologies (soft materials processing technologies). In the present article, interactions between argon plasmas and polyethylene terephthalate (PET) films have been examined for investigations of physical damages induced by plasma exposures to the organic material via chemical bonding-structure analyses using hard X-ray photoelectron spectroscopy (HXPES) together with conventional X-ray photoelectron spectroscopy (XPS). The PET film has been selected as a test material for investigations in the present study not merely because of its specific applications, such as a substrate material, but because PET is one of the well defined organic materials containing major components in a variety of functional soft materials; C-C main chain, CH bond, oxygen functionalities (O=C-O bond and C-O bond) and phenyl group. Especially, variations of the phenyl group due to argon plasma exposures have been investigated in the present article in order to examine plasma interactions with π-conjugated system, which is in charge of electronic functions in many of the π-conjugated electronic organic materials to be utilized as functional layer for advanced flexible device formations. The PET films have been exposed to argon plasmas sustained via inductive coupling of RF power with low-inductance antenna modules. The HXPES analyses exhibited that the degradations of the oxygen functionalities and the phenyl group in the deeper regions up to 50 nm from the surface of the samples were insignificant indicating that the bond scission and/or the degradations of the chemical bonding structures due to photoirradiation from the plasma and/or surface heating via plasma exposure were relatively insignificant as compared with damages in the vicinity of the surface layers.

Magnetic Shape Memory Alloys as smart materials for micro-positioning devices

Directory of Open Access Journals (Sweden)

A. Hubert

2012-10-01

Full Text Available In the field of microrobotics, actuators based on smart materials are predominant because of very good precision, integration capabilities and high compactness. This paper presents the main characteristics of Magnetic Shape Memory Alloys as new candidates for the design of micromechatronic devices. The thermo-magneto-mechanical energy conversion process is first presented followed by the adequate modeling procedure required to design actuators. Finally, some actuators prototypes realized at the Femto-ST institute are presented, including a push-pull bidirectional actuator. Some results on the control and performances of these devices conclude the paper.

Scalability of voltage-controlled filamentary and nanometallic resistance memory devices.

Science.gov (United States)

Lu, Yang; Lee, Jong Ho; Chen, I-Wei

2017-08-31

Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but a rational physical basis to be relied on to design scalable devices spanning many length scales is still lacking. In particular, there is no clear criterion for switching control in those RRAM devices in which resistance changes are limited to localized nanoscale filaments that experience concentrated heat, electric current and field. Here, we demonstrate voltage-controlled resistance switching, always at a constant characteristic critical voltage, for macro and nanodevices in both filamentary RRAM and nanometallic RRAM, and the latter switches uniformly and does not require a forming process. As a result, area-scalability can be achieved under a device-area-proportional current compliance for the low resistance state of the filamentary RRAM, and for both the low and high resistance states of the nanometallic RRAM. This finding will help design area-scalable RRAM at the nanoscale. It also establishes an analogy between RRAM and synapses, in which signal transmission is also voltage-controlled.

Preclinical evaluation of the effect of the combined use of the Ethicon Securestrap® Open Absorbable Strap Fixation Device and Ethicon Physiomesh™ Open Flexible Composite Mesh Device on surgeon stress during ventral hernia repair

Directory of Open Access Journals (Sweden)

Sutton N

2017-12-01

Full Text Available Nadia Sutton,1 Melinda H MacDonald,2 John Lombard,1 Bodgan Ilie,3 Piet Hinoul,4 Douglas A Granger5,6 1Global Health Economics and Market Access, Johnson & Johnson Medical Devices, New Brunswick, NJ, USA; 2Preclinical Center of Excellence, Johnson & Johnson Medical Devices Companies, Somerville, NJ, USA; 3Biostatistics, Ethicon, Somerville, NJ, USA; 4Medical Affairs, Ethicon, Somerville, NJ, USA; 5Institute for Interdisciplinary Salivary Bioscience Research (IISBR, University of California at Irvine, Irvine, CA, USA; 6Johns Hopkins University School of Nursing, Bloomberg School of Public Health, and School of Medicine, Baltimore, MD, USA Aim: To evaluate whether performing ventral hernia repairs using the Ethicon Physiomesh™ Open Flexible Composite Mesh Device in conjunction with the Ethicon Securestrap® Open Absorbable Strap Fixation Device reduces surgical time and surgeon stress levels, compared with traditional surgical repair methods. Methods: To repair a simulated ventral incisional hernia, two surgeries were performed by eight experienced surgeons using a live porcine model. One procedure involved traditional suture methods and a flat mesh, and the other procedure involved a mechanical fixation device and a skirted flexible composite mesh. A Surgery Task Load Index questionnaire was administered before and after the procedure to establish the surgeons’ perceived stress levels, and saliva samples were collected before, during, and after the surgical procedures to assess the biologically expressed stress (cortisol and salivary alpha amylase levels. Results: For mechanical fixation using the Ethicon Physiomesh Open Flexible Composite Mesh Device in conjunction with the Ethicon Securestrap Open Absorbable Strap Fixation Device, surgeons reported a 46.2% reduction in perceived workload stress. There was also a lower physiological reactivity to the intraoperative experience and the total surgical procedure time was reduced by 60

Numerical analysis of a polysilicon-based resistive memory device

KAUST Repository

Berco, Dan

2018-03-08

This study investigates a conductive bridge resistive memory device based on a Cu top electrode, 10-nm polysilicon resistive switching layer and a TiN bottom electrode, by numerical analysis for $$10^{3}$$103 programming and erase simulation cycles. The low and high resistive state values in each cycle are calculated, and the analysis shows that the structure has excellent retention reliability properties. The presented Cu species density plot indicates that Cu insertion occurs almost exclusively along grain boundaries resulting in a confined isomorphic conductive filament that maintains its overall shape and electric properties during cycling. The superior reliability of this structure may thus be attributed to the relatively low amount of Cu migrating into the RSL during initial formation. In addition, the results show a good match and help to confirm experimental measurements done over a previously demonstrated device.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Effects of Piezoelectric Potential of ZnO on Resistive Switching Characteristics of Flexible ZnO/TiO2 Heterojunction Cells

Science.gov (United States)

Li, Hongxia; Zhou, You; Du, Gang; Huang, Yanwei; Ji, Zhenguo

2018-03-01

Flexible resistance random access memory (ReRAM) devices with a heterojunction structure of PET/ITO/ZnO/TiO2/Au were fabricated on polyethylene terephthalate/indium tin oxide (PET/ITO) substrates by different physical and chemical preparation methods. X-ray diffraction, scanning electron microscopy and atomic force microscopy were carried out to investigate the crystal structure, surface topography and cross-sectional structure of the prepared films. X-ray photoelectron spectroscopy was also used to identify the chemical state of Ti, O and Zn elements. Theoretical and experimental analyses were conducted to identify the effect of piezoelectric potential of ZnO on resistive switching characteristics of flexible ZnO/TiO2 heterojunction cells. The results showed a pathway to enhance the performance of ReRAM devices by engineering the interface barrier, which is also feasible for other electronics, optoelectronics and photovoltaic devices.

Flexible structured high-frequency film bulk acoustic resonator for flexible wireless electronics

International Nuclear Information System (INIS)

Zhou, Changjian; Shu, Yi; Yang, Yi; Ren, Tian-Ling; Jin, Hao; Dong, Shu-Rong; Chan, Mansun

2015-01-01

Flexible electronics have inspired many novel and very important applications in recent years and various flexible electronic devices such as diodes, transistors, circuits, sensors, and radiofrequency (RF) passive devices including antennas and inductors have been reported. However, the lack of a high-performance RF resonator is one of the key bottlenecks to implement flexible wireless electronics. In this study, for the first time, a novel ultra-flexible structured film bulk acoustic resonator (FBAR) is proposed. The flexible FBAR is fabricated on a flexible polyimide substrate using piezoelectric thin film aluminum nitride (AlN) for acoustic wave excitation. Both the shear wave and longitudinal wave can be excited under the surface interdigital electrodes configuration we proposed. In the case of the thickness extension mode, a flexible resonator with a working frequency as high as of 5.2325 GHz has been realized. The resonators stay fully functional under bending status and after repeated bending and re-flattening operations. This flexible high-frequency resonator will serve as a key building block for the future flexible wireless electronics, greatly expanding the application scope of flexible electronics. (paper)

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Devices on Flexible Conducting Graphene Substrates

OpenAIRE

Wan, Chang Jin; Wang, Wei; Zhu, Li Qiang; Liu, Yang Hui; Feng, Ping; Liu, Zhao Ping; Shi, Yi; Wan, Qing

2016-01-01

Flexible metal oxide/graphene oxide hybrid multi-gate neuron transistors were fabricated on flexible graphene substrates. Dendritic integrations in both spatial and temporal modes were successfully emulated, and spatiotemporal correlated logics were obtained. A proof-of-principle visual system model for emulating lobula giant motion detector neuron was investigated. Our results are of great interest for flexible neuromorphic cognitive systems.

Towards Flexible Self-powered Micro-scale Integrated Systems

KAUST Repository

Rojas, Jhonathan Prieto

2014-04-01

Today’s information-centered world leads the ever-increasing consumer demand for more powerful, multifunctional portable devices. Additionally, recent developments on long-lasting energy sources and compliant, flexible systems, have introduced new required features to the portable devices industry. For example, wireless sensor networks are in urgent need of self-sustainable, easy-to-deploy, mobile platforms, wirelessly interconnected and accessible through a cloud computing system. The objective of my doctoral work is to develop integration strategies to effectively fabricate mechanically flexible, energy-independent systems, which could empower sensor networks for a great variety of new exciting applications. The first module, flexible electronics, can be achieved through several techniques and materials. Our main focus is to bring mechanical flexibility to the state-of-the-art high performing silicon-based electronics, with billions of ultra-low power, nano-sized transistors. Therefore, we have developed a low-cost batch fabrication process to transform standard, rigid, mono-crystalline silicon (100) wafer with devices, into a thin (5-20 m), mechanically flexible, optically semi-transparent silicon fabric. Recycling of the remaining wafer is possible, enabling generation of multiple fabrics to ensure lowcost and optimal utilization of the whole substrate. We have shown mono, amorphous and poly-crystalline silicon and silicon dioxide fabrics, featuring industry’s most advanced high-/metal-gate based capacitors and transistors. The second module consists on the development of efficient energy scavenging systems. First, we have identified an innovative and relatively young technology, which can address at the same time two of the main concerns of human kind: water and energy. Microbial fuel cells (MFC) are capable of producing energy out the metabolism of bacteria while treating wastewater. We have developed two micro-liter MFC designs, one with carbon

Flexible Transparent Supercapacitors Based on Hierarchical Nanocomposite Films.

Science.gov (United States)

Chen, Fanhong; Wan, Pengbo; Xu, Haijun; Sun, Xiaoming

2017-05-31

Flexible transparent electronic devices have recently gained immense popularity in smart wearable electronics and touch screen devices, which accelerates the development of the portable power sources with reliable flexibility, robust transparency and integration to couple these electronic devices. For potentially coupled as energy storage modules in various flexible, transparent and portable electronics, the flexible transparent supercapacitors are developed and assembled from hierarchical nanocomposite films of reduced graphene oxide (rGO) and aligned polyaniline (PANI) nanoarrays upon their synergistic advantages. The nanocomposite films are fabricated from in situ PANI nanoarrays preparation in a blended solution of aniline monomers and rGO onto the flexible, transparent, and stably conducting film (FTCF) substrate, which is obtained by coating silver nanowires (Ag NWs) layer with Meyer rod and then coating of rGO layer on polyethylene terephthalate (PET) substrate. Optimization of the transparency, the specific capacitance, and the flexibility resulted in the obtained all-solid state nanocomposite supercapacitors exhibiting enhanced capacitance performance, good cycling stability, excellent flexibility, and superior transparency. It provides promising application prospects for exploiting flexible, low-cost, transparent, and high-performance energy storage devices to be coupled into various flexible, transparent, and wearable electronic devices.

Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

Science.gov (United States)

He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

2017-11-01

The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

Rare-Earth Ions in Niobium-Based Devices as a Quantum Memory: Magneto-Optical Effects on Room Temperature Electrical Transport

Science.gov (United States)

2016-09-01

heterostructure can be used to implement cryogenic memory for superconducting digital computing. Our concept involves embedding rare-earth ions in...rare-earth neodymium by ion implantation in thin films of niobium and niobium-based heterostructure devices. We model the ion implantation process...the films and devices so they can properly designed and optimized for utility as quantum memory. We find that the magnetic field has a strong effect

Systematic Development Strategy for Smart Devices Based on Shape-Memory Polymers

Directory of Open Access Journals (Sweden)

Andrés Díaz Lantada

2017-10-01

Full Text Available Shape-memory polymers are outstanding “smart” materials, which can perform important geometrical changes, when activated by several types of external stimuli, and which can be applied to several emerging engineering fields, from aerospace applications, to the development of biomedical devices. The fact that several shape-memory polymers can be structured in an additive way is an especially noteworthy advantage, as the development of advanced actuators with complex geometries for improved performance can be achieved, if adequate design and manufacturing considerations are taken into consideration. Present study presents a review of challenges and good practices, leading to a straightforward methodology (or integration of strategies, for the development of “smart” actuators based on shape-memory polymers. The combination of computer-aided design, computer-aided engineering and additive manufacturing technologies is analyzed and applied to the complete development of interesting shape-memory polymer-based actuators. Aspects such as geometrical design and optimization, development of the activation system, selection of the adequate materials and related manufacturing technologies, training of the shape-memory effect, final integration and testing are considered, as key processes of the methodology. Current trends, including the use of low-cost 3D and 4D printing, and main challenges, including process eco-efficiency and biocompatibility, are also discussed and their impact on the proposed methodology is considered.

Flexible Electronics Research Facility

Data.gov (United States)

Federal Laboratory Consortium — The Flexible Electronics Research Facility designs, synthesizes, tests, and fabricates materials and devices compatible with flexible substrates for Army information...

Printed all-solid flexible microsupercapacitors: towards the general route for high energy storage devices

International Nuclear Information System (INIS)

Wang, Ye; Shi, Yumeng; Zhao, Cheng Xi; Wong, Jen It; Yang, Hui Ying; Sun, Xiao Wei

2014-01-01

A novel method for fabricating all-solid flexible microsupercapacitors (MSCs) was proposed and developed by utilizing screen printing technology. A typical printed MSC is composed of a printed Ag electrode, MnO 2 /onion-like carbon (MnO 2 /OLC) as active material and a polyvinyl alcohol:H 3 PO 4 (PVA:H 3 PO 4 ) as solid electrolyte. A capacity of 7.04 mF cm −2 was achieved for the screen printed MnO 2 /OLC MSCs at a current density of 20 μA cm −2 . It also showed an excellent cycling stability, with 80% retention of the specific capacity after 1000 cycles. The printed all-solid flexible MSCs exhibited remarkably high mechanical flexibility when the devices were bent to a radius of 3.5 mm. In addition, all-solid MSCs were successfully demonstrated by screen printing technique on various substrates, such as silicon, glass and conventional printing paper. Moreover, the screen printing technique can be extended to other active materials, such as OLC and carbon nanotubes. This method provides a general route for printable all-solid flexible MSCs, which is compatible with the roll-to-roll process for various high performance active materials. (paper)

Mechano-chemical degradation of flexible electrodes for optoelectronic device applications

International Nuclear Information System (INIS)

Bejitual, T.S.; Morris, N.J.; Cronin, S.D.; Cairns, D.R.; Sierros, K.A.

2013-01-01

The electrical, optical, and structural integrity of flexible transparent electrodes is of paramount importance in the design and fabrication of optoelectronic devices such as organic light emitting diodes, liquid crystal displays, touch panels, solar cells, and solid-state lighting. The electrodes may corrode due to acid-containing pressure sensitive adhesives present in the device stacks. In addition, structural failure may occur due to external applied loading. The combined action and further accumulation of both repeated mechanical loading and corrosion can aggravate the loss of functionality of the electrodes. In this study we investigate, using the design of experimental methods, the effects of corrosion, applied mechanical strain, film thickness, and number of bending cycles on the electrical and structural integrity of indium tin oxide (ITO) and carbon nanotube (CNT) films both coated on polyethylene terephthalate (PET) substrates. In situ electrical resistance measurements suggest that fatigue-corrosion is found to be the most critical failure mode for the ITO-based coatings. For example, the change in ITO electrical resistance increase under fatigue-corrosion (1% strain, 150,000 cycles) is 5.8 times higher than that of fatigue mode alone. On the other hand, a minimum change in electrical resistance of the CNT-based electrodes is found when applying the same conditions. - Highlights: • Combined mechano-chemical effects on electrode durability. • CNT-based electrodes outperform ITO counterparts. • Importance of combined fatigue and corrosion action on device reliability

Mechano-chemical degradation of flexible electrodes for optoelectronic device applications

Energy Technology Data Exchange (ETDEWEB)

Bejitual, T.S.; Morris, N.J.; Cronin, S.D.; Cairns, D.R.; Sierros, K.A., E-mail: kostas.sierros@mail.wvu.edu

2013-12-31

The electrical, optical, and structural integrity of flexible transparent electrodes is of paramount importance in the design and fabrication of optoelectronic devices such as organic light emitting diodes, liquid crystal displays, touch panels, solar cells, and solid-state lighting. The electrodes may corrode due to acid-containing pressure sensitive adhesives present in the device stacks. In addition, structural failure may occur due to external applied loading. The combined action and further accumulation of both repeated mechanical loading and corrosion can aggravate the loss of functionality of the electrodes. In this study we investigate, using the design of experimental methods, the effects of corrosion, applied mechanical strain, film thickness, and number of bending cycles on the electrical and structural integrity of indium tin oxide (ITO) and carbon nanotube (CNT) films both coated on polyethylene terephthalate (PET) substrates. In situ electrical resistance measurements suggest that fatigue-corrosion is found to be the most critical failure mode for the ITO-based coatings. For example, the change in ITO electrical resistance increase under fatigue-corrosion (1% strain, 150,000 cycles) is 5.8 times higher than that of fatigue mode alone. On the other hand, a minimum change in electrical resistance of the CNT-based electrodes is found when applying the same conditions. - Highlights: • Combined mechano-chemical effects on electrode durability. • CNT-based electrodes outperform ITO counterparts. • Importance of combined fatigue and corrosion action on device reliability.

All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

KAUST Repository

Khan, Yasser; Bhansali, Unnat Sampatraj; Cha, Dong Kyu; Alshareef, Husam N.

2012-01-01

All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase

Highly transparent and rollable PVA-co-PE nanofibers synergistically reinforced with epoxy film for flexible electronic devices.

Science.gov (United States)

Xiong, Bing; Zhong, Weibing; Zhu, Qing; Liu, Ke; Li, Mufang; Sun, Gang; Wang, Dong

2017-12-14

The development of electronics towards a more functions-integrated, flexible and stretchable direction requires mechanically flexible substrates with high thermal and dimensional stability and optical transparency. Herein, rolls of an optically transparent PVA-co-PE nanofibrous membrane/epoxy composite with synergistically enhanced thermal stability, very low CTE, and outstanding mechanical properties are reported. The nanoscale size, the unique inter-stack structure, and the strong interfacial interactions between the PVA-co-PE nanofibers and the epoxy contribute to the synergistic effects. Because of the match between the refractive index (RI) of the PVA-co-PE nanofibers and the epoxy matrix, the visible light transmittance of nanocomposite film could be as high as 85% and the composite film was still optically transparent with a nanofiber loading content of up to 61.7 wt%. The break strength and compliance matrix of the composite film with a high fiber loading of 61.7 wt% increased by 2.3 times of that of the neat epoxy film and exceeded 3000 m 2 N -1 , respectively. PVA-co-PE nanofibers have a very low CTE value (3.634 × 10 -6 K -1 ) and could be applicable as a reinforcement to reduce the thermal expansion of epoxy. Furthermore, we developed a flexible alternating current electroluminescent (ACEL) device based on the transparent composite film and the experimental results showed that the transparent composite film could serve as substrate for flexible electronic devices. In addition, their electrical and optical properties were evaluated.

Selected Advances in Nanoelectronic Devices Logic, Memory and RF

CERN Document Server

Joodaki, Mojtaba

2013-01-01

Nanoelectronics, as a true successor of microelectronics, is certainly a major technology boomer in the 21st century. This has been shown by its several applications and also by its enormous potential to influence all areas of electronics, computers, information technology, aerospace defense, and consumer goods. Although the current semiconductor technology is projected to reach its physical limit in about a decade, nanoscience and nanotechnology promise breakthroughs for the future. The present books provides an in-depth review of the latest advances in the technology of nanoelectronic devices and their developments over the past decades. Moreover, it introduces new concepts for the realization of future nanoelectronic devices. The main focus of the book is on three fundamental branches of semiconductor products or applications: logic, memory, and RF and communication. By pointing out to the key technical challenges, important aspects and characteristics of various designs are used to illustrate mechanisms t...

Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

Science.gov (United States)

Lόpez-Mir, L; Frontera, C; Aramberri, H; Bouzehouane, K; Cisneros-Fernández, J; Bozzo, B; Balcells, L; Martínez, B

2018-01-16

Multiple spin functionalities are probed on Pt/La 2 Co 0.8 Mn 1.2 O 6 /Nb:SrTiO 3 , a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La 2 Co 0.8 Mn 1.2 O 6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co 2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

Science.gov (United States)

Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

2018-05-01

A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

Novel spintronics devices for memory and logic: prospects and challenges for room temperature all spin computing

Science.gov (United States)

Wang, Jian-Ping

An energy efficient memory and logic device for the post-CMOS era has been the goal of a variety of research fields. The limits of scaling, which we expect to reach by the year 2025, demand that future advances in computational power will not be realized from ever-shrinking device sizes, but rather by innovative designs and new materials and physics. Magnetoresistive based devices have been a promising candidate for future integrated magnetic computation because of its unique non-volatility and functionalities. The application of perpendicular magnetic anisotropy for potential STT-RAM application was demonstrated and later has been intensively investigated by both academia and industry groups, but there is no clear path way how scaling will eventually work for both memory and logic applications. One of main reasons is that there is no demonstrated material stack candidate that could lead to a scaling scheme down to sub 10 nm. Another challenge for the usage of magnetoresistive based devices for logic application is its available switching speed and writing energy. Although a good progress has been made to demonstrate the fast switching of a thermally stable magnetic tunnel junction (MTJ) down to 165 ps, it is still several times slower than its CMOS counterpart. In this talk, I will review the recent progress by my research group and my C-SPIN colleagues, then discuss the opportunities, challenges and some potential path ways for magnetoresitive based devices for memory and logic applications and their integration for room temperature all spin computing system.

Neuron Stimulation Device Integrated with Silicon Nanowire-Based Photodetection Circuit on a Flexible Substrate

Directory of Open Access Journals (Sweden)

Suk Won Jung

2016-12-01

Full Text Available This paper proposes a neural stimulation device integrated with a silicon nanowire (SiNW-based photodetection circuit for the activation of neurons with light. The proposed device is comprised of a voltage divider and a current driver in which SiNWs are used as photodetector and field-effect transistors; it has the functions of detecting light, generating a stimulation signal in proportion to the light intensity, and transmitting the signal to a micro electrode. To show the applicability of the proposed neural stimulation device as a high-resolution retinal prosthesis system, a high-density neural stimulation device with a unit cell size of 110 × 110 μ m and a resolution of 32 × 32 was fabricated on a flexible film with a thickness of approximately 50 μm. Its effectiveness as a retinal stimulation device was then evaluated using a unit cell in an in vitro animal experiment involving the retinal tissue of retinal Degeneration 1 (rd1 mice. Experiments wherein stimulation pulses were applied to the retinal tissues successfully demonstrate that the number of spikes in neural response signals increases in proportion to light intensity.

Conformable Skin-Like Conductive Thin Films with AgNWs Strips for Flexible Electronic Devices

Directory of Open Access Journals (Sweden)

Yuhang SUN

2015-08-01

Full Text Available Keeping good conductivity at high stretching strain is one of the main requirements for the fabrication of flexible electronic devices. The elastic nature of siloxane-based elastomers enables many innovative designs in wearable sensor devices and non-invasive insertion instruments, including skin-like tactile sensors. Over the last few years, polydimethylsiloxane (PDMS thin films have been widely used as the substrates in the fabrication of flexible electronic devices due to their good elasticity and outstanding biocompatibility. However, these kind of thin films usually suffer poor resistance to tearing and insufficient compliance to curved surfaces, which limits their applications. Currently no three-dimensionally mountable tactile sensor arrays have been reported commercially available. In this work, we developed a kind of mechanically compliant skin-like conductive thin film by patterning silver nano wire traces in strip-style on Dragon Skin® (DS substrates instead of PDMS. High cross- link quality was achieved then. To further improve the conductivity, a thin gold layer was coated onto the silver nanowires (AgNWs strips. Four different gold deposition routines have been designed and investigated by using different E-beam and spin coating processing methods. Owning to the intrinsically outstanding physical property of the Dragon Skin material and the uniform embedment built in the gold deposition processes, the DS/AgNWs thin films showed convincible advantages over PDMS/AgNWs thin films in both mechanical capability and conductive stability. Through experimental tests, the DS/AgNWs electrode thin films were proven to be able to maintain high conductivity following repeated linear deformations.

Exploration of Uninitialized Configuration Memory Space for Intrinsic Identification of Xilinx Virtex-5 FPGA Devices

Directory of Open Access Journals (Sweden)

Oliver Sander

2012-01-01

Full Text Available SRAM-based fingerprinting uses deviations in power-up behaviour caused by the CMOS fabrication process to identify distinct devices. This method is a promising technique for unique identification of physical devices. In the case of SRAM-based hardware reconfigurable devices such as FPGAs, the integrated SRAM cells are often initialized automatically at power-up, sweeping potential identification data. We demonstrate an approach to utilize unused parts of configuration memory space for device identification. Based on a total of over 200,000 measurements on nine Xilinx Virtex-5 FPGAs, we show that the retrieved values have promising properties with respect to consistency on one device, variety between different devices, and stability considering temperature variation and aging.

Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device

Science.gov (United States)

Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai

2017-12-01

This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

Effect of Ag nanoparticles on resistive switching of polyfluorene-based organic non-volatile memory devices

International Nuclear Information System (INIS)

Kim, Tae-Wook; Oh, Seung-Hwan; Choi, Hye-Jung; Wang, Gun-Uk; Kim, Dong-Yu; Hwang, Hyun-Sang; Lee, Tak-Hee

2010-01-01

The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the current-voltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

Highly scalable 3-D NAND-NOR hybrid-type dual bit per cell flash memory devices with an additional cut-off gate

International Nuclear Information System (INIS)

Cho, Seongjae; Shim, Wonbo; Park, Ilhan; Kim, Yoon; Park, Byunggook

2010-01-01

In this work, a nonvolatile memory (NVM) device of novel structure in 3 dimensions is introduced, and its operation physics is validated. It is based on a pillar structure in which two identical storage nodes are located for dual-bit operation. The two storage nodes on neighboring pillars are controlled by using one common control gate so that the space between silicon pillars can be further reduced. For compatibility with conventional memory operations, an additional cut-off gate is constructed under the common control gate. This is considered as the ultimate form for a 3-D nonvolatile memory device based on a double-gate structure. The underlying physics is explained, and the operational schemes are validated in various aspects by using a numerical device simulation. Also, critical issues in device design for higher reliability are discussed.

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

2017-01-01

Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

Multicolored, Low-Voltage-Driven, Flexible Organic Electrochromic Devices Based on Oligomers.

Science.gov (United States)

Wan, Zhijun; Zeng, Jinming; Li, Hui; Liu, Ping; Deng, Wenji

2018-04-20

In this study, a series of organic conjugated oligomers containing 3,4-ethylenedioxythiophene (EDOT) and aromatic groups are synthesized, which are as follows: 2,5-di(methyl benzoate)-3,4-ethylenedioxy-thiophene (1EDOT-2B-COOCH 3 ), 5,5'-di(methyl benzoate)-2,2'-bi(3,4-ethylenedioxythiophene) (2EDOT-2B-COOCH 3 ), 5,5″-di(methyl benzoate)-2,2':5',2″-ter(3,4-ethylenedioxythiophene) (3EDOT-2B-COOCH 3 ), and 5,5″'-di(methyl benzoate)-2,2':5',2″: 5″,2″'-quater(3,4-ethylenedioxythiophene) (4EDOT-2B-COOCH 3 ). Using these oligomers as active materials, flexible organic electrochromic devices are fabricated. The device structure is indium tin oxide-PET plastic slide (ITO-PET)/active layer/conducting gel/ITO-PET, and the electrochromic properties of oligomers are investigated. These oligomers exhibit reversible color changes upon electrochemical doping and dedoping. The highest optical contrast is exhibited by 4EDOT-2B-COOCH 3 , which is 75.2% at 700 nm. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic Resonance Flow Velocity and Temperature Mapping of a Shape Memory Polymer Foam Device

Energy Technology Data Exchange (ETDEWEB)

Small IV, W; Gjersing, E; Herberg, J L; Wilson, T S; Maitland, D J

2008-10-29

Interventional medical devices based on thermally responsive shape memory polymer (SMP) are under development to treat stroke victims. The goals of these catheter-delivered devices include re-establishing blood flow in occluded arteries and preventing aneurysm rupture. Because these devices alter the hemodynamics and dissipate thermal energy during the therapeutic procedure, a first step in the device development process is to investigate fluid velocity and temperature changes following device deployment. A laser-heated SMP foam device was deployed in a simplified in vitro vascular model. Magnetic resonance imaging (MRI) techniques were used to assess the fluid dynamics and thermal changes associated with device deployment. Spatial maps of the steady-state fluid velocity and temperature change inside and outside the laser-heated SMP foam device were acquired. Though non-physiological conditions were used in this initial study, the utility of MRI in the development of a thermally-activated SMP foam device has been demonstrated.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Science.gov (United States)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.

2012-06-22

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

Memory dynamics under stress.

Science.gov (United States)

Quaedflieg, Conny W E M; Schwabe, Lars

2018-03-01

Stressful events have a major impact on memory. They modulate memory formation in a time-dependent manner, closely linked to the temporal profile of action of major stress mediators, in particular catecholamines and glucocorticoids. Shortly after stressor onset, rapidly acting catecholamines and fast, non-genomic glucocorticoid actions direct cognitive resources to the processing and consolidation of the ongoing threat. In parallel, control of memory is biased towards rather rigid systems, promoting habitual forms of memory allowing efficient processing under stress, at the expense of "cognitive" systems supporting memory flexibility and specificity. In this review, we discuss the implications of this shift in the balance of multiple memory systems for the dynamics of the memory trace. Specifically, stress appears to hinder the incorporation of contextual details into the memory trace, to impede the integration of new information into existing knowledge structures, to impair the flexible generalisation across past experiences, and to hamper the modification of memories in light of new information. Delayed, genomic glucocorticoid actions might reverse the control of memory, thus restoring homeostasis and "cognitive" control of memory again.

The influence of Ti doping and annealing on Ce{sub 2}Ti{sub 2}O{sub 7} flash memory devices

Energy Technology Data Exchange (ETDEWEB)

Kao, Chyuan Haur [Department of Electronic Engineering, Chang Gung University, No. 259, Wenhua 1st Rd., Guishan Dist., Taoyuan City 33302, Taiwan, ROC (China); Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC (China); Department of Electronic Engineering, Ming Chi University of Technology, Taiwan, ROC (China); Chen, Su Zhien [Department of Electronic Engineering, Chang Gung University, No. 259, Wenhua 1st Rd., Guishan Dist., Taoyuan City 33302, Taiwan, ROC (China); Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC (China); Luo, Yang; Chiu, Wang Ting; Chiu, Shih Wei; Chen, I Chien [Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Rd., Puli, Nantou Country 54561, Taiwan, ROC (China); Lin, Chan-Yu [Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Chang Gung University, College of Medicine, Taoyuan, Taiwan, ROC (China); Chen, Hsiang, E-mail: hchen@ncnu.edu.tw [Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Rd., Puli, Nantou Country 54561, Taiwan, ROC (China)

2017-02-28

Highlights: • Ce{sub 2}Ti{sub 2}O{sub 7} flash memories have been fabricated. • Material quality can be improved by annealing. • The memory performance can be enhanced by Ti doping. • Ti doping and annealing can reinforce crystallization. - Abstract: In this research, a CeO{sub 2} film with Ti doping was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. Since incorporation of Ti atoms into the film could fix dangling bonds and defects, the Ce{sub 2}Ti{sub 2}O{sub 7} trapping layer with annealing treatment could have a larger memory window and a faster programming/erasing speed. To confirm the origin, multiple material analyses indicate that annealing at an appropriate temperature and Ti doping could enhance crystallization. The Ce{sub 2}Ti{sub 2}O{sub 7}-based memory device is promising for future industrial flash memory applications.

Flexible displays, rigid designs?

DEFF Research Database (Denmark)

Hornbæk, Kasper

2015-01-01

Rapid technological progress has enabled a wide range of flexible displays for computing devices, but the user experience--which we're only beginning to understand--will be the key driver for successful designs.......Rapid technological progress has enabled a wide range of flexible displays for computing devices, but the user experience--which we're only beginning to understand--will be the key driver for successful designs....

A bio-inspired memory device based on interfacing Physarum polycephalum with an organic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Romeo, Agostino; Dimonte, Alice; Tarabella, Giuseppe; D’Angelo, Pasquale, E-mail: dangelo@imem.cnr.it, E-mail: iannotta@imem.cnr.it; Erokhin, Victor; Iannotta, Salvatore, E-mail: dangelo@imem.cnr.it, E-mail: iannotta@imem.cnr.it [IMEM-CNR, Institute of Materials for Electronics and Magnetism-National Research Council, Parma 43124 (Italy)

2015-01-01

The development of devices able to detect and record ion fluxes is a crucial point in order to understand the mechanisms that regulate communication and life of organisms. Here, we take advantage of the combined electronic and ionic conduction properties of a conducting polymer to develop a hybrid organic/living device with a three-terminal configuration, using the Physarum polycephalum Cell (PPC) slime mould as a living bio-electrolyte. An over-oxidation process induces a conductivity switch in the polymer, due to the ionic flux taking place at the PPC/polymer interface. This behaviour endows a current-depending memory effect to the device.

Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine

Science.gov (United States)

Wang, Lidan; Su, Zisheng; Wang, Cheng

2012-05-01

Nonvolatile organic write-once-read-many-times memory device was demonstrated based on hexadecafluoro-copper-phthalocyanine (F16CuPc) single layer sandwiched between indium tin oxide (ITO) anode and Al cathode. The as fabricated device remains in ON state and it can be tuned to OFF state by applying a reverse bias. The ON/OFF current ratio of the device can reach up to 2.3 × 103. Simultaneously, the device shows long-term storage stability and long retention time in air. The ON/OFF transition is attributed to the formation and destruction of the interfacial dipole layer in the ITO/F16CuPc interface, and such a mechanism is different from previously reported ones.

Self-Positioned Nanosized Mask for Transparent and Flexible Ferroelectric Polymer Nanodiodes Array.

Science.gov (United States)

Hyun, Seung; Kwon, Owoong; Choi, Chungryong; Vincent Joseph, Kanniyambatti L; Kim, Yunseok; Kim, Jin Kon

2016-10-12

High density arrays of ferroelectric polymer nanodiodes have gained strong attention for next-generation transparent and flexible nonvolatile resistive memory. Here, we introduce a facile and innovative method to fabricate ferroelectric polymer nanodiode array on an ITO-coated poly(ethylene terephthalate) (PET) substrate by using block copolymer self-assembly and oxygen plasma etching. First, polystyrene-block-poly(2-vinylpyridine) copolymer (PS-b-P2VP) micelles were spin-coated on poly(vinylidene fluoride-ran-trifluoroethylene) copolymer (P(VDF-TrFE)) film/ITO-coated PET substrate. After the sample was immersed in a gold precursor (HAuCl 4 ) containing solution, which strongly coordinates with nitrogen group in P2VP, oxygen plasma etching was performed. During the plasma etching, coordinated gold precursors became gold nanoparticles (GNPs), which successfully acted as self-positioned etching mask to fabricate a high density array of P(VDF-TrFE)) nanoislands with GNP at the top. Each nanoisland shows clearly individual diode property, as confirmed by current-voltage (I-V) curve. Furthermore, due to the transparent and flexible nature of P(VDF-TrFE)) nanoisland as well as the substrate, the P(VDF-TrFE) nanodiode array was highly tranparent, and the diode property was maintained even after a large number of bendings (for instance, 1000 times). The array could be used as the next-generation tranparent and flexible nonvolatile memory device.

Multiferroic Memories

Directory of Open Access Journals (Sweden)

Amritendu Roy

2012-01-01

Full Text Available Multiferroism implies simultaneous presence of more than one ferroic characteristics such as coexistence of ferroelectric and magnetic ordering. This phenomenon has led to the development of various kinds of materials and conceptions of many novel applications such as development of a memory device utilizing the multifunctionality of the multiferroic materials leading to a multistate memory device with electrical writing and nondestructive magnetic reading operations. Though, interdependence of electrical- and magnetic-order parameters makes it difficult to accomplish the above and thus rendering the device to only two switchable states, recent research has shown that such problems can be circumvented by novel device designs such as formation of tunnel junction or by use of exchange bias. In this paper, we review the operational aspects of multiferroic memories as well as the materials used for these applications along with the designs that hold promise for the future memory devices.

Flexible Bistable Smectic-A Liquid Crystal Device Using Photolithography and Photoinduced Phase Separation

Directory of Open Access Journals (Sweden)

Yang Lu

2012-01-01

Full Text Available A flexible bistable smectic-A liquid crystal (SmA LC device using pixel-isolated mode was demonstrated, in which SmA LC molecules were isolated in pixels by vertical polymer wall and horizontal polymer layer. The above microstructure was achieved by using ultraviolet (UV photolithography and photoinduced phase separation. The polymer wall was fabricated by photolithography, and then the SmA LC was encapsulated in pixels between polymer wall through UV-induced phase separation, in which the polymer wall acts as supporting structure from mechanical pressure and maintains the cell gap from bending, and the polymer layer acts as adhesive for tight attachment of two substrates. The results demonstrated that all the intrinsic bistable properties of the SmA LC are preserved, and good electrooptical characteristics such as high contrast ratio and excellent stability of the bistable states were characterized. This kind of SmA bistable flexible display has high potential to be used as electronic paper, smart switchable reflective windows, and so forth.

A programmable associative memory for track finding

International Nuclear Information System (INIS)

Bardi, A.; Belforte, S.; Donati, S.; Galeotti, S.; Giannetti, P.; Morsani, F.; Passuello, D.; Spinella, F.; Cerri, A.; Punzi, G.; Ristori, L.; Dell'Orso, M.; Meschi, E.; Leger, A.; Speer, T.; Wu, X.

1998-01-01

We present a device, based on the concept of associative memory for pattern recognition, dedicated to on-line track finding in high-energy physics experiments. A large pattern bank, describing all possible tracks, can be organized into field programmable gate arrays where all patterns are compared in parallel to data coming from the detector during readout. Patterns, recognized among 2 66 possible combinations, are output in a few 30 MHz clock cycles. Programmability results in a flexible, simple architecture and it allows to keep up smoothly with technology improvements. (orig.)

Microwave impedance imaging on semiconductor memory devices

Science.gov (United States)

Kundhikanjana, Worasom; Lai, Keji; Yang, Yongliang; Kelly, Michael; Shen, Zhi-Xun

2011-03-01

Microwave impedance microscopy (MIM) maps out the real and imaginary components of the tip-sample impedance, from which the local conductivity and dielectric constant distribution can be derived. The stray field contribution is minimized in our shielded cantilever design, enabling quantitative analysis of nano-materials and device structures. We demonstrate here that the MIM can spatially resolve the conductivity variation in a dynamic random access memory (DRAM) sample. With DC or low-frequency AC bias applied to the tip, contrast between n-doped and p-doped regions in the dC/dV images is observed, and p-n junctions are highlighted in the dR/dV images. The results can be directly compared with data taken by scanning capacitance microscope (SCM), which uses unshielded cantilevers and resonant electronics, and the MIM reveals more information of the local dopant concentration than SCM.

Radiation Damage in Electronic Memory Devices

OpenAIRE

Fetahović, Irfan; Pejović, Milić; Vujisić, Miloš

2013-01-01

This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simula...

Kmerind: A Flexible Parallel Library for K-mer Indexing of Biological Sequences on Distributed Memory Systems.

Science.gov (United States)

Pan, Tony; Flick, Patrick; Jain, Chirag; Liu, Yongchao; Aluru, Srinivas

2017-10-09

Counting and indexing fixed length substrings, or k-mers, in biological sequences is a key step in many bioinformatics tasks including genome alignment and mapping, genome assembly, and error correction. While advances in next generation sequencing technologies have dramatically reduced the cost and improved latency and throughput, few bioinformatics tools can efficiently process the datasets at the current generation rate of 1.8 terabases every 3 days. We present Kmerind, a high performance parallel k-mer indexing library for distributed memory environments. The Kmerind library provides a set of simple and consistent APIs with sequential semantics and parallel implementations that are designed to be flexible and extensible. Kmerind's k-mer counter performs similarly or better than the best existing k-mer counting tools even on shared memory systems. In a distributed memory environment, Kmerind counts k-mers in a 120 GB sequence read dataset in less than 13 seconds on 1024 Xeon CPU cores, and fully indexes their positions in approximately 17 seconds. Querying for 1% of the k-mers in these indices can be completed in 0.23 seconds and 28 seconds, respectively. Kmerind is the first k-mer indexing library for distributed memory environments, and the first extensible library for general k-mer indexing and counting. Kmerind is available at https://github.com/ParBLiSS/kmerind.

Hydrogen-peroxide-modified egg albumen for transparent and flexible resistive switching memory

Science.gov (United States)

Zhou, Guangdong; Yao, Yanqing; Lu, Zhisong; Yang, Xiude; Han, Juanjuan; Wang, Gang; Rao, Xi; Li, Ping; Liu, Qian; Song, Qunliang

2017-10-01

Egg albumen is modified by hydrogen peroxide with concentrations of 5%, 10%, 15% and 30% at room temperature. Compared with devices without modification, a memory cell of Ag/10% H2O2-egg albumen/indium tin oxide exhibits obviously enhanced resistive switching memory behavior with a resistance ratio of 104, self-healing switching endurance for 900 cycles and a prolonged retention time for a 104 s @ 200 mV reading voltage after being bent 103 times. The breakage of massive protein chains occurs followed by the recombination of new protein chain networks due to the oxidation of amidogen and the synthesis of disulfide during the hydrogen peroxide modifying egg albumen. Ions such as Fe3+, Na+, K+, which are surrounded by protein chains, are exposed to the outside of protein chains to generate a series of traps during the egg albumen degeneration process. According to the fitting results of the double logarithm I-V curves and the current-sensing atomic force microscopy (CS-AFM) images of the ON and OFF states, the charge transfer from one trap center to its neighboring trap center is responsible for the resistive switching memory phenomena. The results of our work indicate that hydrogen- peroxide-modified egg albumen could open up a new avenue of biomaterial application in nanoelectronic systems.

The future of memory

Science.gov (United States)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Management of long-term and reversible hysteroscopic sterilization: a novel device with nickel-titanium shape memory alloy

Science.gov (United States)

2014-01-01

Background Female sterilization is the second most commonly used method of contraception in the United States. Female sterilization can now be performed through laparoscopic, abdominal, or hysteroscopic approaches. The hysteroscopic sterilization may be a safer option than sterilization through laparoscopy or laparotomy because it avoids invading the abdominal cavity and undergoing general anaesthesia. Hysteroscopic sterilization mainly includes chemical agents and mechanical devices. Common issues related to the toxicity of the chemical agents used have raised concerns regarding this kind of contraception. The difficulty of the transcervical insertion of such mechanical devices into the fallopian tubes has increased the high incidence of device displacement or dislodgment. At present, Essure® is the only commercially available hysteroscopic sterilization device being used clinically. The system is irreversible and is not effective immediately. Presentation of the hypothesis Our new hysteroscopic sterility system consists of nickel-titanium (NiTi) shape memory alloy and a waterproof membrane. The NiTi alloy is covered with two coatings to avoid toxic Ni release and to prevent stimulation of epithelial tissue growth around the oviducts. Because of the shape memory effect of the NiTi alloy, the device works like an umbrella: it stays collapsed at low temperature before placement and opens by the force of shape memory activated by the body temperature after it is inserted hysteroscopically into the interstitial tubal lumen. The rim of the open device will incise into interstitial myometrium during the process of unfolding. Once the device is fixed, it blocks the tube completely. When the patient no longer wishes for sterilization, the device can be closed by perfusing liquid with low temperature into the uterine cavity, followed by prospective hysteroscopic removal. After the device removal, the fallopian tube will revert to its physiological functions. Testing the

Analysis of operations and cyber security policies for a system of cooperating Flexible Alternating Current Transmission System (FACTS) devices.

Energy Technology Data Exchange (ETDEWEB)

Phillips, Laurence R.; Tejani, Bankim; Margulies, Jonathan; Hills, Jason L.; Richardson, Bryan T.; Baca, Micheal J.; Weiland, Laura

2005-12-01

Flexible Alternating Current Transmission Systems (FACTS) devices are installed on electric power transmission lines to stabilize and regulate power flow. Power lines protected by FACTS devices can increase power flow and better respond to contingencies. The University of Missouri Rolla (UMR) is currently working on a multi-year project to examine the potential use of multiple FACTS devices distributed over a large power system region in a cooperative arrangement in which the FACTS devices work together to optimize and stabilize the regional power system. The report describes operational and security challenges that need to be addressed to employ FACTS devices in this way and recommends references, processes, technologies, and policies to address these challenges.

Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle

Science.gov (United States)

Jin, Zhiwen; Liu, Guo; Wang, Jizheng

2013-05-01

Uniform Au nanoparticles (NPs) are formed by thermally depositing nominal 2-nm thick Au film on a 10-nm thick polyimide film formed on a Al electrode, and then covered by a thin polymer semiconductor film, which acts as an energy barrier for electrons to be injected from the other Al electrode (on top of polymer film) into the Au NPs, which are energetically electron traps in such a resistive random access memory (RRAM) device. The Au NPs based RRAM device exhibits estimated retention time of 104 s, cycle times of more than 100, and ON-OFF ratio of 102 to 103. The carrier transport properties are also analyzed by fitting the measured I-V curves with several conduction models.

Enhanced mechanical properties of linear segmented shape memory poly(urethane-urea) by incorporating flexible PEG400 and rigid piperazine

Science.gov (United States)

Zhang, Xiao-Yan; Ma, Yu-Fei; Li, Yong-Gang; Wang, Pin-Pin; Wang, Yuan-Liang; Luo, Yan-Feng

2012-12-01

The goal of this study is to design and synthesize a linear segmented shape memory poly(urethane-urea) (SMPUU) that possesses near-body-temperature shape memory temperature ( T tran) and enhanced mechanical properties by incorporating flexible poly(ethylene glycol) 400 (PEG400) to form poly(D,L-lactic acid)-based macrodiols (PDLLA-PEG400-PDLLA) and then rigid piperazine (PPZ) as a chain extender to form the desired SMPUUs (PEG400-PUU-PPZ). PEG400 increased M n while maintaining a lower T g of PDLLA-PEG400-PDLLA, which together with PPZ improved the mechanical properties of PEG400-PUU-PPZ. The obtained optimum SMPUU with enhanced mechanical properties ( σ y = 24.28 MPa; ɛ f = 698%; U f = 181.5 MJ/m3) and a T g of 40.62°C exhibited sound shape memory properties as well, suggesting a promising SMPUU for in vivo biomedical applications.