WorldWideScience

Sample records for films improve o2

  1. Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

    Directory of Open Access Journals (Sweden)

    Xingpeng Liu

    2017-12-01

    Full Text Available In order to develop film electrodes for the surface acoustic wave (SAW devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

  2. Improvement in performance of Si-based thin film solar cells with a nanocrystalline SiO{sub 2}–TiO{sub 2} layer

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yang-Shih [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Lien, Shui-Yang [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Wuu, Dong-Sing, E-mail: dsw@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Huang, Yu-Xuan; Kung, Chung-Yuan [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China)

    2014-11-03

    In this paper, titanium dioxide (TiO{sub 2}) solution with grain sizes of 1–5 nm is prepared by microwave hydrothermal synthesis, and then mixed with silicon dioxide (SiO{sub 2}) solution to yield different SiO{sub 2}/TiO{sub 2} ratios. The mixed solution is then sol–gel spin-coated on glass as an anti-reflecting and self-cleaning bi-functional layer. The experimental results show that the transmittance is optimized not only by minimizing the reflectance by reflective index matching at the glass/air interface, but also by improving the film/glass interface adhesion. Adding SiO{sub 2} into TiO{sub 2} in a weight ratio of 5 leads to the highest average transmittance of 93.6% which is 3% higher than that of glass. All of the SiO{sub 2}–TiO{sub 2} films exhibit a remarkable inherent hydrophilicity even when not illuminated by ultra-violet light. Using the optimized SiO{sub 2}–TiO{sub 2} film in a hydrogenated amorphous silicon/microcrystalline silicon tandem, solar cell increases its conversion efficiency by 5.2%. Two months of outdoor testing revealed that cells with the SiO{sub 2}–TiO{sub 2} film avoid 1.7% of the degradation loss that is caused by dust and dirt in the environment. - Highlights: • High-transmittance and self-cleaning nano-sized SiO{sub 2}–TiO{sub 2} films are prepared. • Using SiO{sub 2}–TiO{sub 2} film can increase average transmittance from 90.5% (glass) to 93.6%. • The SiO{sub 2}–TiO{sub 2} films have naturally hydrophilicity with water contact angles < 13°. • Cells with the film have a 4.9% higher photocurrent than cells without the film.

  3. Surfactant assisted electrodeposition of MnO2 thin films: Improved supercapacitive properties

    International Nuclear Information System (INIS)

    Dubal, D.P.; Kim, W.B.; Lokhande, C.D.

    2011-01-01

    Highlights: → Effect of Triton X-100 on physico-chemical properties of MnO 2 films. → High supercapacitance of 345 F g -1 . → Charge-discharge, impedance spectroscopy. - Abstract: In order to obtain a high specific capacitance, MnO 2 thin films have been electrodeposited in the presence of a neutral surfactant (Triton X-100). These films were further characterized by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron microscopy (FESEM) and contact angle measurement. The XRD studies revealed that the electrodeposited MnO 2 films are amorphous and addition of Triton X-100 does not change its amorphous nature. The electrodeposited films of MnO 2 in the presence of the Triton X-100 possess greater porosity and hence greater surface area in relation to the films prepared in the absence of the surfactant. Wettability test showed that the MnO 2 film becomes superhydrophilic from hydrophilic due to Triton X-100. Supercapacitance properties of MnO 2 thin films studied by cyclic voltammetry, galvanostatic charge-discharge cycling and impedance spectroscopy showed maximum supercapacitance for MnO 2 films deposited in presence of Triton X-100 is 345 F g -1 .

  4. Improved electrochemical performances of oxygen plasma treated LiMn2O4 thin films

    International Nuclear Information System (INIS)

    Chen, C C; Chiu, K-F; Lin, K M; Lin, H C; Yang, C-R; Wang, F M

    2007-01-01

    LiMn 2 O 4 spinel thin films were deposited by radio frequency (rf) magnetron sputtering followed by annealing at 600 0 C in air.The films were then post-treated with an rf driven oxygen plasma. The crystallization and surface morphology of LiMn 2 O 4 thin films were seen to change with rf power. The treated samples were tested under harsh conditions such as deep discharge to 1.5 V and cycling at elevated temperature of 60 0 C to verify the electrochemical performances of LiMn 2 O 4 cathodes. The oxygen plasma treatments improved the electrochemical properties of LiMn 2 O 4 thin films significantly. As the cells were cycled in the range of 4.5-2.0 V at 60 0 C, the samples treated at a proper rf power of 50 W exhibited an initial capacity greater than ∼400 mAh g -1 with reasonable cycling stability. The results were attributed to the change of morphology and the formation of a surface layer induced by the oxygen plasma irradiation

  5. Tailoring of TiO2 films by H2SO4 treatment and UV irradiation to improve anticoagulant ability and endothelial cell compatibility.

    Science.gov (United States)

    Liao, Yuzhen; Li, Linhua; Chen, Jiang; Yang, Ping; Zhao, Ansha; Sun, Hong; Huang, Nan

    2017-07-01

    Surfaces with dual functions that simultaneously exhibit good anticoagulant ability and endothelial cell (EC) compatibility are desirable for blood contact materials. However, these dual functions have rarely been achieved by inorganic materials. In this study, titanium dioxide (TiO 2 ) films were treated by sulphuric acid (H 2 SO 4 ) and ultraviolet (UV) irradiation successively (TiO 2 H 2 SO 4 -UV), resulting in good anticoagulant ability and EC compatibility simultaneously. We found that UV irradiation improved the anticoagulant ability of TiO 2 films significantly while enhancing EC compatibility, though not significantly. The enhanced anticoagulant ability could be related to the oxidation of surface-adsorbed hydrocarbons and increased hydrophilicity. The H 2 SO 4 treatment improved the anticoagulant ability of TiO 2 films slightly, while UV irradiation improved the anticoagulant ability strongly. The enhanced EC compatibility could be related to the increased surface roughness and positive charges on the surface of the TiO 2 films. Furthermore, the time-dependent degradation of the enhanced EC compatibility and anticoagulant ability of TiO 2 H 2 SO 4 -UV was observed. In summary, TiO 2 H 2 SO 4 -UV expressed both excellent anticoagulant ability and good EC compatibility at the same time, which could be desirable for blood contact materials. However, the compatibility of TiO 2 H 2 SO 4 -UV with smooth muscle cells (SMCs) and macrophages was also improved. More effort is still needed to selectively improve EC compatibility on TiO 2 films for better re-endothelialization. Copyright © 2017 Elsevier B.V. All rights reserved.

  6. Surfactant assisted electrodeposition of MnO{sub 2} thin films: Improved supercapacitive properties

    Energy Technology Data Exchange (ETDEWEB)

    Dubal, D.P. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Kim, W.B. [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)

    2011-10-13

    Highlights: > Effect of Triton X-100 on physico-chemical properties of MnO{sub 2} films. > High supercapacitance of 345 F g{sup -1}. > Charge-discharge, impedance spectroscopy. - Abstract: In order to obtain a high specific capacitance, MnO{sub 2} thin films have been electrodeposited in the presence of a neutral surfactant (Triton X-100). These films were further characterized by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron microscopy (FESEM) and contact angle measurement. The XRD studies revealed that the electrodeposited MnO{sub 2} films are amorphous and addition of Triton X-100 does not change its amorphous nature. The electrodeposited films of MnO{sub 2} in the presence of the Triton X-100 possess greater porosity and hence greater surface area in relation to the films prepared in the absence of the surfactant. Wettability test showed that the MnO{sub 2} film becomes superhydrophilic from hydrophilic due to Triton X-100. Supercapacitance properties of MnO{sub 2} thin films studied by cyclic voltammetry, galvanostatic charge-discharge cycling and impedance spectroscopy showed maximum supercapacitance for MnO{sub 2} films deposited in presence of Triton X-100 is 345 F g{sup -1}.

  7. Fabrication of SnO{sub 2}-TiO{sub 2} core-shell nanopillar-array films for enhanced photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Hsyi-En, E-mail: sean@mail.stust.edu.tw; Lin, Chun-Yuan; Hsu, Ching-Ming

    2017-02-28

    Highlights: • SnO{sub 2}-TiO{sub 2} core-shell nanopillar-arrays on ITO glass were successfully fabricated. • The 3D heterojunction solves the problem of low photocatalytic activity of TiO{sub 2} films. • SnO{sub 2} is more suitable than ITO for the core layer to separate electron-hole pairs. - Abstract: Immobilized or deposited thin film TiO{sub 2} photocatalysts are suffering from a low photocatalytic activity due to either a low photon absorption efficiency or a high carrier recombination rate. Here we demonstrate that the photocatalytic activity of TiO{sub 2} can be effectively improved by the SnO{sub 2}-TiO{sub 2} core-shell nanopillar-array structure which combines the benefits of SnO{sub 2}/TiO{sub 2} heterojunction and high reaction surface area. The SnO{sub 2}-TiO{sub 2} core-shell nanopillar-array films were fabricated using atomic layer deposition and dry etching techniques via barrier-free porous anodic alumina templates. The photocatalytic activity of the prepared films was evaluated by methylene blue (MB) bleaching under 352 nm UV light irradiation. The results show that the photocatalytic activity of TiO{sub 2} film was 45% improved by introducing a SnO{sub 2} film between TiO{sub 2} and ITO glass substrate and was 300% improved by using the SnO{sub 2}-TiO{sub 2} core-shell nanopillar-array structure. The 45% improvement by the SnO{sub 2} interlayer is attributed to the SnO{sub 2}/TiO{sub 2} heterojunction which separates the photogenerated electron-hole pairs in TiO{sub 2} for MB degradation, and the high photocatalytic activity of the SnO{sub 2}-TiO{sub 2} core-shell nanopillar-array films is attributed to the three dimensional SnO{sub 2}/TiO{sub 2} heterojunction which owns both the carrier separation ability and the high photocatalytic reaction surface area.

  8. Laser conditioning effect on HfO2/SiO2 film

    International Nuclear Information System (INIS)

    Wei Yaowei; Zhang Zhe; Liu Hao; Ouyang Sheng; Zheng Yi; Tang Gengyu; Chen Songlin; Ma Ping

    2013-01-01

    Laser conditioning is one of the important methods to improve the laser damage threshold of film optics. Firstly, a large aperture laser was used to irradiate the HfO 2 /SiO 2 reflectors, which were evaporated from hafnia and silica by e-beam. Secondly, a laser calorimeter was used to test the film absorption before and after laser irradiation. Focused ion beam (FIB) was few reported using on laser film, it was used to study the damage morphology and explore the cause of damage. The shooting of the partial ejection on nodule was obtained for the first time, which provided the basis for study the damage process. The results show that film absorption was decreased obviously after the laser irradiation, laser conditioning can raise the laser damage threshold by the 'cleaning mechanism'. For the HfO 2 /SiO 2 reflectors, laser conditioning was effective to eject the nodules on substrate. It resulted from the nodule residue not to affect the subsequent laser. In addition, laser conditioning was not effective to the nodule in the film, which might be from the material spatter in coating process. In this case, other method could be used to get rid of the nodules. (authors)

  9. Alkali passivation mechanism of sol-gel derived TiO2-SiO2 films coated on soda-lime-silica glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, A; Matsuno, Y; Katayama, S; Tsuno, T [Nippon Steel Glass Co. Ltd., Tokyo (Japan); Toge, N; Minami, T [University of Osaka Prefecture, Osaka (Japan). College of Engineering

    1992-09-01

    TiO2-SiO2 films prepared by the sol-gel method serves as an effective alkali passivation layer on a soda-lime-silica glass substrate and the film is superior to a sol-gel derived pure SiO2 film from the view point of weathering resistance improvement. To clarify the reason, alkali passivation mechanism of sol-gel derived TiO2-SiO2 glass films with different TiO2 contents coated on a soda-lime-silica glass substrate was studied by SIMS (secondary ion mass spectroscopy) and XPS (X-ray photoelectron spectroscopy) analyses, and compared with the results of a sol-gel derived pure SiO2 film. As a result, the following conclusions were obtained: An increase in TiO2 content in the TiO2 SiO2 film increases the sodium concentration in the film, which was induced by sodium migration from the glass substrate during the heat-treatment. Because of the presence of sodium the TiO2 -SiO2 films serve not as a barrier but as an effective getter of alkali ions and thereby effectively improve the weathering resistance Of the glass substrate. 10 refs., 6 figs.

  10. Improved flux-pinning properties of REBa{sub 2}Cu{sub 3}O{sub 7-z} films by low-level Co doping

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wentao; Pu, Minghua; Wang, Weiwei; Lei, Ming [Key Laboratory of Magnetic Levitation and Maglev Trains, Ministry of Education of China, Superconductivity R and D Centre (SRDC), Southwest Jiaotong University, Erhuanlu Beiyiduan 111, 610031 Chengdu (China); Cheng, Cuihua [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, 2052 NSW, Sydney (Australia); Zhao, Yong [Key Laboratory of Magnetic Levitation and Maglev Trains, Ministry of Education of China, Superconductivity R and D Centre (SRDC), Southwest Jiaotong University, Erhuanlu Beiyiduan 111, 610031 Chengdu (China); Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wales, 2052 NSW, Sydney (Australia)

    2011-09-15

    Biaxially textured REBa{sub 2}Cu{sub 3-x}Co{sub x}O{sub 7-z} (RE = Gd,Y) films were prepared on (00l) LaAlO{sub 3} substrate using self-developed fluorine-free chemical solution deposition (CSD) approach. The in-field J{sub c} values are significantly improved for REBa{sub 2}Cu{sub 3-x}Co{sub x}O{sub 7-z} films through low-level Co doping. Co-doped GdBa{sub 2}Cu{sub 3}O{sub 7-z} film shows the highest J{sub c} values at higher temperatures and fields, whereas the J{sub c} values of Co-doped YBa{sub 2}Cu{sub 3}O{sub 7-z} film surpass that of other films at lower temperatures and fields. In addition, the volume pinning force densities of films with Co doping have been distinctly enhanced in the applied fields, indicating improved flux-pinning properties. The possible reasons are discussed in detail. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Synthesis of cauliflower-like ZnO-TiO2 composite porous film and photoelectrical properties

    International Nuclear Information System (INIS)

    Jiang Yinhua; Yan Yun; Zhang Wenli; Ni Liang; Sun Yueming; Yin Hengbo

    2011-01-01

    A series of cauliflower-like TiO 2 -ZnO composite porous films with various molar ratios of Zn/Ti were prepared by the screen printing technique on the fluorine-doped SnO 2 (FTO) conducting glasses. The composite films were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray energy-dispersive spectrometry (EDS) and UV-vis transmittance spectrum. The results showed composite film electrode had a novel cauliflower-like morphology, which could effectively increase the dye absorption. The corresponding dye-sensitized solar cells (DSCs) were made by the composite film, and effects of ZnO incorporation on the photovoltaic performances of the DSCs were studied. With the Zn/Ti molar ratio not more than 3% in ZnO-TiO 2 composite film of about 5 μm-thickness, the photocurrent density (J sc ) and the solar-to-electricity conversion efficiency (η) were greatly improved compared with those of the DSC based on bare TiO 2 film of same thickness. This increases in efficiency and J sc were attributed to high electron conductivity of ZnO, the improved dye adsorption and large light transmittance of composite film.

  12. Improved optical response and photocatalysis for N-doped titanium oxide (TiO2) films prepared by oxidation of TiN

    International Nuclear Information System (INIS)

    Wan, L.; Li, J.F.; Feng, J.Y.; Sun, W.; Mao, Z.Q.

    2007-01-01

    In order to improve the photocatalytic activity, N-doped titanium oxide (TiO 2 ) films were obtained by thermal oxidation of TiN films, which were prepared on Ti substrates by ion beam assisted deposition (IBAD). The dominating rutile TiO 2 phase was found in films after thermal oxidation. According to the results of X-ray photoelectron spectroscopy (XPS), the residual N atoms occupied O-atom sites in TiO 2 lattice to form Ti-O-N bonds. UV-vis spectra revealed the N-doped TiO 2 film had a red shift of absorption edge. The maximum red shift was assigned to the sample annealed at 750 deg. C, with an onset wavelength at 600 nm. The onset wavelength corresponded to the photon energy of 2.05 eV, which was nearly 1.0 eV below the band gap of pure rutile TiO 2 . The effect of nitrogen was responsible for the enhancement of photoactivity of N-doped TiO 2 films in the range of visible light

  13. Substrate decoration for improvement of current-carrying capabilities of YBa{sub 2}Cu{sub 3}O{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khoryushin, Alexey V., E-mail: khoryushin@ya.ru [Department of Physics, Technical University of Denmark, DTU Building 309, Kgs. Lyngby DK-2800 (Denmark); Mozhaev, Peter B.; Mozhaeva, Julia E. [Department of Physics, Technical University of Denmark, DTU Building 309, Kgs. Lyngby DK-2800 (Denmark); Bdikin, Igor K. [Department of Mechanical Engineering, Centre for Mechanical Technology and Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Zhao, Yue [Department of Energy Conversion and Storage, Technical University of Denmark, DK-4000 Roskilde (Denmark); Andersen, Niels H.; Jacobsen, Claus S.; Hansen, Jørn Bindslev [Department of Physics, Technical University of Denmark, DTU Building 309, Kgs. Lyngby DK-2800 (Denmark)

    2013-03-15

    Highlights: ► Effects of substrate decoration on properties of YBCO thin films were studied. ► Y{sub 2}O{sub 3} nanoparticles, ultra-thin Y{sub 2}O{sub 3} and Y:ZrO{sub 2} layers were used as decoration layer. ► Decoration improves j{sub C} (5 T and 50 K) up to 0.97 MA/cm{sup 2} vs. 0.76 MA/cm{sup 2} for a reference film. ► Ultra-thin layer of yttria and yttria nanoparticles have a similar effect on YBCO. ► Y{sub 2}O{sub 3} decoration results in power law coefficient α = 0.3 vs. α = 0.4 for a reference film. -- Abstract: The effects of substrate decoration with yttria and Y:ZrO{sub 2} on the structural and electrical properties of the YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) thin films are studied. The films were deposited on (LaAlO{sub 3}){sub 3}–(Sr{sub 2}AlTaO{sub 8}){sub 7} substrates by pulsed laser deposition. Two different structures of decoration layer were applied, a template layer of nanoparticles and an uniform ultra-thin layer. Significant improvement of current-carrying capabilities was observed, especially at high external magnetic fields. Structural studies of these films reveal the presence of extended linear defects in the YBCO matrix. The formation of these structures is attributed to seeding of randomly oriented YBCO grains due to suppression of epitaxy in the very beginning of the deposition. The films of both kinds of decoration layers show nearly the same improvement of j{sub C} over the reference film at 77 and 50 K: j{sub C} (5T and 50 K) reaches 0.92 and 0.97 MA/cm{sup 2} for uniform and template decoration layers. At 5 and 20 K the effect of template decoration layers is more beneficial: j{sub C} (5T and 20 K) values are 3.5 and 4.1 MA/cm{sup 2}, j{sub C} (5T and 5 K) values are 6.4 and 7.9 MA/cm{sup 2}, for uniform and template decoration layers, respectively.

  14. Superhydrophilic SnO{sub 2} nanosheet-assembled film

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Yoshitake, E-mail: masuda-y@aist.go.jp; Kato, Kazumi

    2013-10-01

    SnO{sub 2} films were fabricated on fluorine-doped tin oxide (FTO) substrates in aqueous solutions. The films of about 800 nm in thickness grew in the solutions containing SnF{sub 2} of 25 mM at 90 °C for 24 h. They consisted of nanosheets of about 5–10 nm in thickness and about 100–1600 nm in plane size. The films had gradient structure of nanosheets. Smaller nanosheets formed dense structures in a bottom area, while larger nanosheets formed porous structures in a surface area of the films. The SnO{sub 2} films showed higher transparency than bare FTO substrates in a visible light region of 470 to 850 nm. Decrease of reflectance increased transparency. The SnO{sub 2} films had superhydrophilic surfaces of static contact angle below 1°. Nanosheet-assembled structures contributed high hydrophilicity. The surfaces were further modified with light irradiation. High speed camera observation showed that spread speed of water was improved with the irradiation. Removal of surface adsorbed organic molecules and increase in the number of hydroxyl groups brought superhydrophilicity and high spread speed. - Highlights: ► SnO{sub 2} nanosheet films were prepared from aqueous solutions. ► The antireflective films showed superhydrophilicity. ► Crystal growth mechanism of the gradient structures is discussed.

  15. Silver film on nanocrystalline TiO{sub 2} support: Photocatalytic and antimicrobial ability

    Energy Technology Data Exchange (ETDEWEB)

    Vukoje, Ivana D., E-mail: ivanav@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Tomašević-Ilić, Tijana D., E-mail: tommashev@gmail.com [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Zarubica, Aleksandra R., E-mail: zarubica2000@yahoo.com [Department of Chemistry, Faculty of Science and Mathematics, University of Niš, Višegradska 33, 18000 Niš (Serbia); Dimitrijević, Suzana, E-mail: suzana@tmf.bg.ac.rs [Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11000 Belgrade (Serbia); Budimir, Milica D., E-mail: mickbudimir@gmail.com [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Vranješ, Mila R., E-mail: mila@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Šaponjić, Zoran V., E-mail: saponjic@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia); Nedeljković, Jovan M., E-mail: jovned@vinca.rs [Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11000 Belgrade (Serbia)

    2014-12-15

    Highlights: • Simple photocatalytic rout for deposition of Ag on nanocrystalline TiO{sub 2} films. • High antibactericidal efficiency of deposited Ag on TiO{sub 2} support. • Improved photocatalytic performance of TiO{sub 2} films in the presence of deposited Ag. - Abstract: Nanocrystalline TiO{sub 2} films were prepared on glass slides by the dip coating technique using colloidal solutions consisting of 4.5 nm particles as a precursor. Photoirradiation of nanocrystalline TiO{sub 2} film modified with alanine that covalently binds to the surface of TiO{sub 2} and at the same time chelate silver ions induced formation of metallic silver film. Optical and morphological properties of thin silver films on nanocrystalline TiO{sub 2} support were studied by absorption spectroscopy and atomic force microscopy. Improvement of photocatalytic performance of nanocrystalline TiO{sub 2} films after deposition of silver was observed in degradation reaction of crystal violet. Antimicrobial ability of deposited silver films on nanocrystalline TiO{sub 2} support was tested in dark as a function of time against Escherichia coli, Staphylococcus aureus, and Candida albicans. The silver films ensured maximum cells reduction of both bacteria, while the fungi reduction reached satisfactory 98.45% after 24 h of contact.

  16. Synthesis of cauliflower-like ZnO-TiO{sub 2} composite porous film and photoelectrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Yinhua, E-mail: jyinhua@126.com [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China) and School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Yan Yun; Zhang Wenli; Ni Liang [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Sun Yueming [School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189 (China); Yin Hengbo [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China)

    2011-05-15

    A series of cauliflower-like TiO{sub 2}-ZnO composite porous films with various molar ratios of Zn/Ti were prepared by the screen printing technique on the fluorine-doped SnO{sub 2} (FTO) conducting glasses. The composite films were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray energy-dispersive spectrometry (EDS) and UV-vis transmittance spectrum. The results showed composite film electrode had a novel cauliflower-like morphology, which could effectively increase the dye absorption. The corresponding dye-sensitized solar cells (DSCs) were made by the composite film, and effects of ZnO incorporation on the photovoltaic performances of the DSCs were studied. With the Zn/Ti molar ratio not more than 3% in ZnO-TiO{sub 2} composite film of about 5 {mu}m-thickness, the photocurrent density (J{sub sc}) and the solar-to-electricity conversion efficiency ({eta}) were greatly improved compared with those of the DSC based on bare TiO{sub 2} film of same thickness. This increases in efficiency and J{sub sc} were attributed to high electron conductivity of ZnO, the improved dye adsorption and large light transmittance of composite film.

  17. Surface Modification of Solution-Processed ZrO2 Films through Double Coating for Pentacene Thin-Film Transistors

    Science.gov (United States)

    Kwon, Jin-Hyuk; Bae, Jin-Hyuk; Lee, Hyeonju; Park, Jaehoon

    2018-03-01

    We report the modification of surface properties of solution-processed zirconium oxide (ZrO2) dielectric films achieved by using double-coating process. It is proven that the surface properties of the ZrO2 film are modified through the double-coating process; the surface roughness decreases and the surface energy increases. The present surface modification of the ZrO2 film contributes to an increase in grain size of the pentacene film, thereby increasing the field-effect mobility and decreasing the threshold voltage of the pentacene thin-film transistors (TFTs) having the ZrO2 gate dielectric. Herein, the molecular orientation of pentacene film is also studied based on the results of contact angle and X-ray diffraction measurements. Pentacene molecules on the double-coated ZrO2 film are found to be more tilted than those on the single-coated ZrO2 film, which is attributed to the surface modification of the ZrO2 film. However, no significant differences are observed in insulating properties between the single-and the double-coated ZrO2 dielectric films. Consequently, the characteristic improvements of the pentacene TFTs with the double-coated ZrO2 gate dielectric film can be understood through the increase in pentacene grain size and the reduction in grain boundary density.

  18. Improving chemical solution deposited YBa 2Cu 3O 7- δ film properties via high heating rates

    Science.gov (United States)

    Siegal, M. P.; Dawley, J. T.; Clem, P. G.; Overmyer, D. L.

    2003-12-01

    The superconducting and structural properties of YBa 2Cu 3O 7- δ (YBCO) films grown from chemical solution deposited (CSD) metallofluoride-based precursors improve by using high heating rates to the desired growth temperature. This is due to avoiding the nucleation of undesirable a-axis grains at lower temperatures, from 650 to 800 °C in p(O 2)=0.1%. Minimizing time spent in this range during the temperature ramp of the ex situ growth process depresses a-axis grain growth in favor of the desired c-axis orientation. Using optimized conditions, this results in high-quality YBCO films on LaAlO 3(1 0 0) with Jc(77 K) ∼ 3 MA/cm 2 for films thicknesses ranging from 60 to 140 nm. In particular, there is a dramatic decrease in a-axis grains in coated-conductors grown on CSD Nb-doped SrTiO 3(1 0 0) buffered Ni(1 0 0) tapes.

  19. Underwater photosynthesis and respiration in leaves of submerged wetland plants: gas films improve CO2 and O2 exchange

    DEFF Research Database (Denmark)

    Colmer, Timothy David; Pedersen, Ole

    2007-01-01

    (N) was enhanced up to sixfold. Gas films on submerged leaves enable continued gas exchange via stomata and thus bypassing of cuticle resistance, enhancing exchange of O(2) and CO(2) with the surrounding water, and therefore underwater P(N) and respiration.......Many wetland plants have gas films on submerged leaf surfaces. We tested the hypotheses that leaf gas films enhance CO(2) uptake for net photosynthesis (P(N)) during light periods, and enhance O(2) uptake for respiration during dark periods. Leaves of four wetland species that form gas films......, and two species that do not, were used. Gas films were also experimentally removed by brushing with 0.05% (v/v) Triton X. Net O(2) production in light, or O(2) consumption in darkness, was measured at various CO(2) and O(2) concentrations. When gas films were removed, O(2) uptake in darkness was already...

  20. Improvement of the characteristics of chemical bath deposition-cadmium sulfide films deposited on an O{sub 2} plasma-treated polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Donggun [Department of Electronic Engineering, Korea National University of Transportation, Chungju-si, Chungcheongbuk-do 380-702 (Korea, Republic of); Lee, Jaehyeong [School of Electronic and Electrical Engineering, Sungkyunkwan University 300, Cheoncheon-dong, Jangan-gu, Sunwon, Kyeonggi-do, 440-746 (Korea, Republic of); Song, Woochang, E-mail: wcsong@kangwon.ac.kr [Department of Electrical Engineering, Kangwon National University, Samcheok-si, Gangwon-do 245-711 (Korea, Republic of)

    2013-11-01

    We prepared cadmium sulfide (CdS) films on a polyethylene terephthalate (PET) substrate by a chemical bath deposition (CBD) technique. To improve the adhesion between the CdS film and the PET substrate, the substrate was pre-treated with an O{sub 2} plasma by an inductively coupled plasma. The surface characterizations of the pre-treated PET substrate were analyzed by a contact angle measurement and atomic force microscopy. The results showed that that O{sub 2} plasma-treated PET films had more hydrophilic surface. The hydrophilic property of the substrate is one of the important factors when a film is prepared by CBD. The structural and the optical properties of the CdS films, deposited on PET substrates, were analyzed by using a scanning electron microscope, X-ray diffraction and a UV–visible spectrophotometer. The CdS films were formed on a compact and granular structure. The optical transmittance was also improved. Therefore, the O{sub 2} plasma treatment of a PET surface is an effective method of preparing CdS films deposited on substrates by CBD. - Highlights: • Chemical bath deposition of CdS film for flexible solar cells • O{sub 2} plasma treatment improved adhesion between the CdS and polymer substrate • Identification of best fabrication condition of CdS window layers for flexible solar cells.

  1. Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

    Science.gov (United States)

    Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

    2017-11-01

    Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.

  2. Transformational dynamics of BZO and BHO nanorods imposed by Y2O3 nanoparticles for improved isotropic pinning in YBa2Cu3O7 -δ thin films

    Science.gov (United States)

    Gautam, Bibek; Sebastian, Mary Ann; Chen, Shihong; Shi, Jack; Haugan, Timothy; Xing, Zhongwen; Zhang, Wenrui; Huang, Jijie; Wang, Haiyan; Osofsky, Mike; Prestigiacomo, Joseph; Wu, Judy Z.

    2017-07-01

    An elastic strain model was applied to evaluate the rigidity of the c-axis aligned one-dimensional artificial pinning centers (1D-APCs) in YBa2Cu3O7-δ matrix films. Higher rigidity was predicted for BaZrO3 1D-APCs than that of the BaHfO3 1D-APCs. This suggests a secondary APC doping of Y2O3 in the 1D-APC/YBa2Cu3O7-δ nanocomposite films would generate a stronger perturbation to the c-axis alignment of the BaHfO3 1D-APCs and therefore a more isotropic magnetic vortex pinning landscape. In order to experimentally confirm this, we have made a comparative study of the critical current density Jc (H, θ, T) of 2 vol.% BaZrO3 + 3 vol.%Y2O3 and 2 vol.%BaHfO3 + 3 vol.%Y2O3 double-doped (DD) YBa2Cu3O7-δ films deposited at their optimal growth conditions. A much enhanced isotropic pinning was observed in the BaHfO3 DD samples. For example, at 65 K and 9.0 T, the variation of the Jc across the entire θ range from θ=0 (H//c) to θ=90 degree (H//ab) is less than 18% for BaHfO3 DD films, in contrast to about 100% for the BaZrO3 DD counterpart. In addition, lower α values from the Jc(H) ˜ H-α fitting were observed in the BaHfO3 DD films in a large θ range away from the H//c-axis. Since the two samples have comparable Jc values at H//c-axis, the improved isotropic pinning in BaHfO3 DD films confirms the theoretically predicted higher tunability of the BaHfO3 1D-APCs in APC/YBa2Cu3O7-δ nanocomposite films.

  3. Photocatalytic Reduction of CO2 to Methane on Pt/TiO2 Nanosheet Porous Film

    Directory of Open Access Journals (Sweden)

    Li Qiu-ye

    2014-01-01

    Full Text Available Anatase TiO2 nanosheet porous films were prepared by calcination of the orthorhombic titanic acid films at 400°C. They showed an excellent photocatalytic activity for CO2 photoreduction to methane, which should be related to their special porous structure and large Brunauer-Emmett-Teller (BET surface area. In order to further improve the photocatalytic activity, Pt nanoparticles were loaded uniformly with the average size of 3-4 nm on TiO2 porous films by the photoreduction method. It was found that the loading of Pt expanded the light absorption ability of the porous film and improved the transformation efficiency of CO2 to methane. The conversion yield of CO2 to methane on Pt/TiO2 film reached 20.51 ppm/h·cm2. The Pt/TiO2 nanosheet porous film was characterized by means of X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscope (TEM, and ultraviolet-visible light diffuse reflectance spectra (UV-vis DRS. Moreover, the transient photocurrent-time curves showed that the Pt/TiO2 nanosheet porous film exhibited higher photocurrent, indicating that the higher separation efficiency of the photogenerated charge carriers was achieved.

  4. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    Science.gov (United States)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-12-01

    Infinite-layer LaNiO2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO2 is isostructural to SrCuO2, the parent compound of high-Tc Sr0.9La0.1CuO2 with Tc = 44 K, and has 3d9 configuration, which is very rare in oxides but common to high-Tc copper oxides. The bulk synthesis of LaNiO2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO2. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

  5. Synthesis and characterization of binary ZnO-SnO2 (ZTO) thin films by e-beam evaporation technique

    Science.gov (United States)

    Bibi, Shagufta; Shah, A.; Mahmood, Arshad; Ali, Zahid; Raza, Qaisar; Aziz, Uzma; Haneef; Waheed, Abdul; Shah, Ziaullah

    2018-04-01

    The binary ZnO-SnO2 (ZTO) thin films with varying SnO2 concentrations (5, 10, 15, and 20 wt%) were grown on glass substrate by e-beam evaporation technique. The prepared ZTO films were annealed at 400 °C in air. These films were then characterized to investigate their structural, optical, and electrical properties as a function of SnO2 concentration. XRD analysis reveals that the crystallinity of the film decreases with the addition of SnO2 and it transforms to an amorphous structure at a composition of 40% SnO2 and 60% ZnO. Morphology of the films was examined by atomic force microscopy which points out that surface roughness of the films decreases with the increasing of SnO2 in the film. Optical properties such as optical transparency, band-gap energy, and optical constants of these films were examined by spectrophotometer and spectroscopic Ellipsometer. It was observed that the average optical transmission of mixed films improves with incorporation of SnO2. In addition, the band-gap energy of the films was determined to be in the range of 3.37-3.7 eV. Furthermore, it was found that the optical constants (n and k) decrease with the addition of SnO2. Similarly, it is observed that the electrical resistivity increases nonlinearly with the increase in SnO2 in ZnO-SnO2 thin films. However, it is noteworthy that the highest figure of merit (FOM) value, i.e., 55.87 × 10-5 Ω-1, is obtained for ZnO-SnO2 (ZTO) thin film with 40 wt% of SnO2 composition. Here, we suggest that ZnO-SnO2 (ZTO) thin film with composition of 60:40 wt% can be used as an efficient TCO film due to the improved transmission, and reduced RMS value and highest FOM value.

  6. Improvement of H2S Sensing Properties of SnO2-Based Thick Film Gas Sensors Promoted with MoO3 and NiO

    Directory of Open Access Journals (Sweden)

    In Sung Son

    2013-03-01

    Full Text Available The effects of the SnO2 pore size and metal oxide promoters on the sensing properties of SnO2-based thick film gas sensors were investigated to improve the detection of very low H2S concentrations (<1 ppm. SnO2 sensors and SnO2-based thick-film gas sensors promoted with NiO, ZnO, MoO3, CuO or Fe2O3 were prepared, and their sensing properties were examined in a flow system. The SnO2 materials were prepared by calcining SnO2 at 600, 800, 1,000 and 1,200 °C to give materials identified as SnO2(600, SnO2(800, SnO2(1000, and SnO2(1200, respectively. The Sn(12Mo5Ni3 sensor, which was prepared by physically mixing 5 wt% MoO3 (Mo5, 3 wt% NiO (Ni3 and SnO2(1200 with a large pore size of 312 nm, exhibited a high sensor response of approximately 75% for the detection of 1 ppm H2S at 350 °C with excellent recovery properties. Unlike the SnO2 sensors, its response was maintained during multiple cycles without deactivation. This was attributed to the promoter effect of MoO3. In particular, the Sn(12Mo5Ni3 sensor developed in this study showed twice the response of the Sn(6Mo5Ni3 sensor, which was prepared by SnO2(600 with the smaller pore size than SnO2(1200. The excellent sensor response and recovery properties of Sn(12Mo5Ni3 are believed to be due to the combined promoter effects of MoO3 and NiO and the diffusion effect of H2S as a result of the large pore size of SnO2.

  7. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    International Nuclear Information System (INIS)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-01-01

    Highlights: •LaNiO 2 films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO 2 . •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO 2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO 2 is isostructural to SrCuO 2 , the parent compound of high-T c Sr 0.9 La 0.1 CuO 2 with T c = 44 K, and has 3d 9 configuration, which is very rare in oxides but common to high-T c copper oxides. The bulk synthesis of LaNiO 2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO 2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO 2 . The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures

  8. Effect of a SiO2 buffer layer on the characteristics of In2O3-ZnO-SnO2 films deposited on PET substrates

    International Nuclear Information System (INIS)

    Woo, B.-J.; Hong, J.-S.; Kim, S.-T.; Kim, H.-M.; Park, S.-H.; Kim, J.-J.; Ahn, J.-S.

    2006-01-01

    Transparent and conducting In 2 O 3 -ZnO-SnO 2 (IZTO) thin films were prepared on flexible PET substrates at room temperature by using an ion-gun-assisted sputtering technique. We mainly investigated the effect of a SiO 2 buffer layer, deposited in-between the film and the PET substrate, on the electrical stability of the film under various external stresses caused by moist-heat or violent temperature variations. The insertion of the SiO 2 layer improves structural, optical and electrical properties of the films: The IZTO/SiO 2 /PET film with a buffer shows a change (∼4 %) in the sheet resistance much smaller than that of the IZTO/PET film without a buffer (∼22 %), against a severe thermal stress of the repeated processes between quenching at -25 .deg. C and annealing at 100 .deg. C for 5 min at each process. Under a moist-heat stress at 90 % relative humidity at 80 .deg. C, the IZTO/SiO 2 /PET film responds with only a slight change (∼8.5 %) in the sheet resistance from 30.2 to 33.0 Ω/□ after being exposed for 240 h. The enhanced stability is understood to be the result of the buffer layers acting as a blocking barrier to water vapor or organic solvents diffusing from the PET substrate during deposition or annealing.

  9. Improved photoelectrochemical performance of BiVO4/MoO3 heterostructure thin films

    Science.gov (United States)

    Kodan, Nisha; Mehta, B. R.

    2018-05-01

    Bismuth vanadate (BiVO4) and Molybdenum trioxide (MoO3) thin films have been prepared by RF sputtering technique. BiVO4 thin films were deposited on indium doped tin oxide (In: SnO2; ITO) substrates at room temperature and 80W applied rf power. The prepared BiVO4 thin films were further annealed at 450°C for 2 hours in air to obtain crystalline monoclinic phase and successively coated with MoO3 thin films deposited at 150W rf power and 400°C for 30 minutes. The effect of coupling BiVO4 and MoO3 on the structural, optical and photoelectrochemical (PEC) properties have been studied. Optical studies reveal that coupling of BiVO4 and MoO3 results in improvement of optical absorption in visible region of solar spectrum. PEC study shows approximate 3-fold and 38-fold increment in photocurrent values of BiVO4/MoO3 (0.38 mA/cm2) heterostructure thin film as compared to MoO3 (0.15 mA/cm2) and BiVO4 (10 µA/cm2) thin films at applied bias of 1 V vs Ag/AgCl in 0.5 M Na2SO4 (pH=7) electrolyte.

  10. Improving the surface structure of high quality Sr{sub 2}FeMoO{sub 6} thin films for multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Angervo, I., E-mail: ijange@utu.fi [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku (Finland); Saloaro, M. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); Tikkanen, J. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland); University of Turku Graduate School (UTUGS), University of Turku, FI-20014 Turku (Finland); Huhtinen, H.; Paturi, P. [Wihuri Physical Laboratory, Department of Physics and Astronomy, FI-20014 University of Turku (Finland)

    2017-02-28

    Highlights: • The effects of PLD laser fluence and deposition temperature are investigated on SFMO thin films. • We focus on improving the surface structure of the SFMO thin films. • Both the surface structure and the Curie temperature can be improved by fabricating the films at 900 °C. - Abstract: Two sets of Sr{sub 2}FeMoO{sub 6} thin films were prepared with pulsed laser deposition and the effect of the laser fluence and the deposition temperature was investigated. The Sr{sub 2}FeMoO{sub 6} thin films showed clear evidence of impurity phases when the laser fluence was altered. Phase pure films resulted through the whole temperature range between 900 °C and 1050 °C when a proper laser fluence was used. Films fabricated at lower deposition temperatures resulted with smaller surface roughnesses around 5 nm, higher Curie temperatures and with relatively high saturation magnetization values. The Curie temperature was determined from the minimum of the first order derivative and results showed the highest values of 350 K and above. The films with the highest Curie temperature reached zero magnetization above 400 K. The results indicate that both high microstructural and high magnetic quality Sr{sub 2}FeMoO{sub 6} thin films can be obtained with a deposition temperature between 900 °C and 950 °C. This provides better fabrication parameters for the upcoming SFMO multilayer structures.

  11. TiO2 and Cu/TiO2 Thin Films Prepared by SPT

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-12-01

    Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

  12. Nitrogen and europium doped TiO2 anodized films with applications in photocatalysis

    International Nuclear Information System (INIS)

    Chi, Choong-Soo; Choi, Jinwook; Jeong, Yongsoo; Lee, Oh Yeon; Oh, Han-Jun

    2011-01-01

    Micro-arc oxidation method is a useful process for mesoporous titanium dioxide films. In order to improve the photocatalytic activity of the TiO 2 film, N-Eu co-doped titania catalyst was synthesized by micro-arc oxidation in the H 2 SO 4 /Eu(NO 3 ) 3 mixture solution. The specific surface area and the roughness of the anodic titania film fabricated in the H 2 SO 4 /Eu(NO 3 ) 3 electrolyte, were increased compared to that of the anodic TiO 2 film prepared in H 2 SO 4 solution. The absorbance response of N-Eu titania film shows a higher adsorption onset toward visible light region, and the incorporated N and Eu ions during anodization as a dopant in the anodic TiO 2 film significantly enhanced the photocatalytic activity for dye degradation. After dye decomposition test for 3 h, dye removal rates for the anodic TiO 2 film were 60.7% and 90.1% for the N-Eu doped titania film. The improvement of the photocatalytic activity was ascribed to the synergistic effects of the surface enlargement and the new electronic state of the TiO 2 band gap by N and Eu co-doping.

  13. TiO2 film/Cu2O microgrid heterojunction with photocatalytic activity under solar light irradiation.

    Science.gov (United States)

    Zhang, Junying; Zhu, Hailing; Zheng, Shukai; Pan, Feng; Wang, Tianmin

    2009-10-01

    Coupling a narrow-band-gap semiconductor with TiO(2) is an effective method to produce photocatalysts that work under UV-vis light irradiation. Usually photocatalytic coupled-semiconductors exist mainly as powders, and photocatalytic activity is only favored when a small loading amount of narrow-band-gap semiconductor is used. Here we propose a heavy-loading photocatalyst configuration in which 51% of the surface of the TiO(2) film is covered by a Cu(2)O microgrid. The coupled system shows higher photocatalytic activity under solar light irradiation than TiO(2) and Cu(2)O films. This improved performance is due to the efficient charge transfer between the two phases and the similar opportunity each has to be exposed to irradiation and adsorbates.

  14. Improved conductivity of infinite-layer LaNiO{sub 2} thin films by metal organic decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Ai [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan); Research Fellow of the Japan Society for the Promotion of Science (Japan); Manabe, Takaaki [National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1, Tsukuba, Ibaraki 305-8565 (Japan); Naito, Michio, E-mail: minaito@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan)

    2013-12-15

    Highlights: •LaNiO{sub 2} films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO{sub 2}. •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO{sub 2} thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO{sub 2} is isostructural to SrCuO{sub 2}, the parent compound of high-T{sub c} Sr{sub 0.9}La{sub 0.1}CuO{sub 2} with T{sub c} = 44 K, and has 3d{sup 9} configuration, which is very rare in oxides but common to high-T{sub c} copper oxides. The bulk synthesis of LaNiO{sub 2} is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO{sub 2} is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO{sub 2}. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

  15. Chemically synthesized TiO2 and PANI/TiO2 thin films for ethanol sensing applications

    Science.gov (United States)

    Gawri, Isha; Ridhi, R.; Singh, K. P.; Tripathi, S. K.

    2018-02-01

    Ethanol sensing properties of chemically synthesized titanium dioxide (TiO2) and polyaniline/titanium dioxide nanocomposites (PANI/TiO2) had been performed at room temperature. In-situ oxidative polymerization process had been employed with aniline as a monomer in presence of anatase titanium dioxide nanoparticles. The prepared samples were structurally and morphologically characterized by x-ray diffraction, fourier transform infrared spectra, high resolution-transmission electron microscopy and field emission-scanning electron microscopy. The crystallinity of PANI/TiO2 nanocomposite was revealed by XRD and FTIR spectra confirmed the presence of chemical bonding between the polymer chains and metal oxide nanoparticles. HR-TEM micrographs depicted that TiO2 particles were embedded in polymer matrix, which provides an advantage over pure TiO2 nanoparticles in efficient adsorption of vapours. These images also revealed that the TiO2 nanoparticles were irregular in shape with size around 17 nm. FE-SEM studies revealed that in the porous structure of PANI/TiO2 film, the intercalation of TiO2 in PANI chains provides an advantage over pure TiO2 film for uniform interaction with ethanol vapors. The sensitivity values of prepared samples were examined towards ethanol vapours at room temperature. The PANI/TiO2 nanocomposite exhibited better sensing response and faster response-recovery examined at different ethanol concentrations ranging from 5 ppm to 20 ppm in comparison to pure TiO2 nanoparticles. The increase in vapour sensing of PANI/TiO2 sensing film as compared to pure TiO2 film had been explained in detail with the help of gas sensing mechanism of TiO2 and PANI/TiO2. This provides strong evidence that gas sensing properties of TiO2 had been considerably improved and enhanced with the addition of polymer matrix.

  16. Annealing of SnO2 thin films by ultra-short laser pulses

    NARCIS (Netherlands)

    Scorticati, D.; Illiberi, A.; Bor, T.; Eijt, S.W.H.; Schut, H.; Römer, G.R.B.E.; Lange, D.F. de; Huis In't Veld, A.J.

    2014-01-01

    Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO2 thin films by means of thermal processing. Industrial grade SnO2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance

  17. The effects of Fe2O3 nanoparticles on MgB2 superconducting thin films

    International Nuclear Information System (INIS)

    Koparan, E.T.; Sidorenko, A.; Yanmaz, E.

    2013-01-01

    Full text: Since the discovery of superconductivity in binary MgB 2 compounds, extensive studies have been carried out because of its excellent properties for technological applications, such as high transition temperature (T c = 39 K), high upper critical field (H c2 ), high critical current density (J c ). Thin films are important for fundamental research as well as technological applications of any functional materials. Technological applications primarily depend on critical current density. The strong field dependence of J c for MgB 2 necessitates an enhancement in flux pinning performance in order to improve values in high magnetic fields. An effective way to improve the flux pinning is to introduce flux pinning centers into MgB 2 through a dopant having size comparable to the coherence length of MgB 2 . In this study, MgB 2 film with a thickness of about 600 nm was deposited on the MgO (100) single crystal substrate using a 'two-step' synthesis technique. Firstly, deposition of boron thin film was carried out by rf magnetron sputtering on MgO substrates and followed by a post deposition annealing at 850 degrees Celsius in magnesium vapour. In order to investigate the effect of Fe 2 O 3 nanoparticles on the structural and magnetic properties of films, MgB 2 films were coated with different concentrations of Fe 2 O 3 nanoparticles by a spin coating process. The effects of different concentrations of ferromagnetic Fe 2 O 3 nanoparticles on superconducting properties of obtained films were carried out by using structural (XRD, SEM, AFM), electrical (R-T) and magnetization (M-H, M-T and AC Susceptibility) measurements. It was calculated that anisotropic coefficient was about γ = 1.2 and coherence length of 5 nm for the uncoated film. As a result of coherence length, the appropriate diameters of Fe 2 O 3 nanoparticles were found to be 10 nm, indicating that these nanoparticles served as the pinning centers. Based on the data obtained from this study, it can be

  18. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

    Science.gov (United States)

    Leedy, Kevin D.; Chabak, Kelson D.; Vasilyev, Vladimir; Look, David C.; Boeckl, John J.; Brown, Jeff L.; Tetlak, Stephen E.; Green, Andrew J.; Moser, Neil A.; Crespo, Antonio; Thomson, Darren B.; Fitch, Robert C.; McCandless, Jonathan P.; Jessen, Gregg H.

    2017-07-01

    Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (20 1 ¯ ) orientation. An average conductivity of 732 S cm-1 with a mobility of 26.5 cm2 V-1 s-1 and a carrier concentration of 1.74 × 1020 cm-3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.

  19. Ion beam modification of TiO2 films prepared by Cat-CVD for solar cell

    International Nuclear Information System (INIS)

    Narita, Tomoki; Iida, Tamio; Ogawa, Shunsuke; Mizuno, Kouichi; So, Jisung; Kondo, Akihiro; Yoshida, Norimitsu; Itoh, Takashi; Nonomura, Shuichi; Tanaka, Yasuhito

    2008-01-01

    The effects of nitrogen ion bombardment on TiO 2 films prepared by the Cat-CVD method have been studied to improve the optical and electrical properties of the material for use in Si thin film solar cells. The refractive index n and the dark conductivity of the TiO 2 film increased with irradiation time. The refractive index n of the TiO 2 film was changed from 2.1 to 2.4 and the electrical conductivity was improved from 3.4 x 10 -2 to 1.2 x 10 -1 S/cm by the irradiation. These results are due to the formation of Ti-N bonds and oxygen vacancies in the film

  20. Effect of composition on properties of In2O3-Ga2O3 thin films

    Science.gov (United States)

    Demin, I. E.; Kozlov, A. G.

    2017-06-01

    The In2O3-Ga2O3 mixed oxide polycrystalline thin films with various ratios of components were obtained by pulsed laser deposition. The effect of films composition on surface morphology, electrophysical and gas sensing properties and energies of adsorption and desorption of combustible gases was studied. The films with50%In2O3-50%Ga2O3 composition showed maximum gas response (˜25 times) combined with minimum optimal working temperature (˜530 °C) as compared with the other films. The optical transmittance of the films in visible range was investigated. For 50%In2O3-50%Ga2O3 films, the transmittance is higher in comparison with the other films. The explanation of the dependency of films behaviors on their composition was presented.The In2O3-Ga2O3 films were assumed to have perspectives as gas sensing material for semiconducting gas sensors.

  1. Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

    International Nuclear Information System (INIS)

    De Los Santos Valladares, L.; Salinas, D. Hurtado; Dominguez, A. Bustamante; Najarro, D. Acosta; Khondaker, S.I.; Mitrelias, T.; Barnes, C.H.W.; Aguiar, J. Albino; Majima, Y.

    2012-01-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2 /Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO was detected. Pure Cu 2 O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: ► The crystallization and electrical resistivity of oxides in a Cu films are studied. ► In annealing Cu films, the phase evolution Cu + Cu 2 O → Cu 2 O → Cu 2 O + CuO → CuO occurs. ► A resistivity phase diagram, obtained from the current–voltage response, is presented. ► Some decreases in the resistivity may be related to the crystallization.

  2. Corrosion of thin, magnetron sputtered Nb_2O_5 films

    International Nuclear Information System (INIS)

    Pillis, Marina Fuser; Geribola, Guilherme Altomari; Scheidt, Guilherme; Gonçalves de Araújo, Edval; Lopes de Oliveira, Mara Cristina; Antunes, Renato Altobelli

    2016-01-01

    Highlights: • Niobium oxide based films were obtained by DC magnetron sputtering. • Different deposition times were tested. • The best corrosion resistance was obtained for the Nb_2O_5 film produced at 15′. • Film porosity determines the corrosion resistance. - Abstract: Niobium oxide based thin films were deposited on AISI 316 stainless steel substrates using reactive DC magnetron sputtering. Structure, composition and corrosion resistance of the niobium oxide films were studied. The corrosion behavior of the specimens was evaluated by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The concentration of niobium and oxygen in the films was obtained by Rutherford backscattering spectroscopy (RBS). The film structure was analyzed by X-ray diffractometry. The corrosion resistance of the substrate was improved by the Nb_2O_5 layers. The best protective performance was achieved for the deposition time of 15 min.

  3. Toward the understanding of annealing effects on (GaIn)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qixin

    2015-01-01

    (GaIn) 2 O 3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N 2 , vacuum, Ar, O 2 ) and temperatures (700–1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O 2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn) 2 O 3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O 2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. - Highlights: • (GaIn) 2 O 3 films have been annealed in different gas ambient and temperature. • Only oxygen ambient can crystallize (GaIn) 2 O 3 film. • Film annealed at 800 °C appears best crystal quality. • High quality films were obtained with wide indium content varying from 0.2 to 0.7

  4. Electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated film capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Yong; Yao, Manwen, E-mail: yaomw@tongji.edu.cn; Chen, Jianwen; Xu, Kaien; Yao, Xi [Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 200092 (China)

    2016-07-07

    The electrical characteristics of SrTiO{sub 3}/Al{sub 2}O{sub 3} (160 nm up/90 nm down) laminated film capacitors using the sol-gel process have been investigated. SrTiO{sub 3} is a promising and extensively studied high-K dielectric material, but its leakage current property is poor. SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films can effectively suppress the demerits of pure SrTiO{sub 3} films under low electric field, but the leakage current value reaches to 0.1 A/cm{sup 2} at higher electric field (>160 MV/m). In this study, a new approach was applied to reduce the leakage current and improve the dielectric strength of SrTiO{sub 3}/Al{sub 2}O{sub 3} laminated films. Compared to laminated films with Au top electrodes, dielectric strength of laminated films with Al top electrodes improves from 205 MV/m to 322 MV/m, simultaneously the leakage current maintains the same order of magnitude (10{sup −4} A/cm{sup 2}) until the breakdown occurs. The above electrical characteristics are attributed to the anodic oxidation reaction in origin, which can repair the defects of laminated films at higher electric field. The anodic oxidation reactions have been confirmed by the corresponding XPS measurement and the cross sectional HRTEM analysis. This work provides a new approach to fabricate dielectrics with high dielectric strength and low leakage current.

  5. Structure and Properties of La2O3-TiO2 Nanocomposite Films for Biomedical Applications

    Science.gov (United States)

    Zhang, Lin; Sun, Zhi-Hua; Yu, Feng-Mei; Chen, Hong-Bin

    2011-01-01

    The hemocompatibility of La2O3-doped TiO2 films with different concentration prepared by radio frequency (RF) sputtering was studied. The microstructures and blood compatibility of TiO2 films were investigated by scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and UV-visible optical absorption spectroscopy, respectively. With the increasing of the La2O3 concentrations, the TiO2 films become smooth, and the grain size becomes smaller. Meanwhile, the band gap of the samples increases from 2.85 to 3.3 eV with increasing of the La2O3 content in TiO2 films from 0 to 3.64%. La2O3-doped TiO2 films exhibit n-type semiconductor properties due to the existence of Ti2+ and Ti3+. The mechanism of hemocompatibility of TiO2 film doped with La2O3 was analyzed and discussed. PMID:22162671

  6. TiO2 coated SnO2 nanosheet films for dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Cai Fengshi; Yuan Zhihao; Duan Yueqing; Bie Lijian

    2011-01-01

    TiO 2 -coated SnO 2 nanosheet (TiO 2 -SnO 2 NS) films about 300 nm in thickness were fabricated on fluorine-doped tin oxide glass by a two-step process with facile solution-grown approach and subsequent hydrolysis of TiCl 4 aqueous solution. The as-prepared TiO 2 -SnO 2 NSs were characterized by scanning electron microscopy and X-ray diffraction. The performances of the dye-sensitized solar cells (DSCs) with TiO 2 -SnO 2 NSs were analyzed by current-voltage measurements and electrochemical impedance spectroscopy. Experimental results show that the introduction of TiO 2 -SnO 2 NSs can provide an efficient electron transition channel along the SnO 2 nanosheets, increase the short current density, and finally improve the conversion efficiency for the DSCs from 4.52 to 5.71%.

  7. Asymmetric photoelectric property of transparent TiO2 nanotube films loaded with Au nanoparticles

    International Nuclear Information System (INIS)

    Wang, Hui; Liang, Wei; Liu, Yiming; Zhang, Wanggang; Zhou, Diaoyu; Wen, Jing

    2016-01-01

    Highlights: • Highly transparent films of TiO 2 nanotube arrays were directly fabricated on FTO glasses. • Semitransparent TNT-Au composite films were obtained and exhibited excellent photoelectrocatalytic ability. • Back-side of TNT-Au composite films was firstly irradiated and tested to compare with front-side of films. - Abstract: Semitransparent composite films of Au loaded TiO 2 nanotubes (TNT-Au) were prepared by sputtering Au nanoparticles on highly transparent TiO 2 nanotubes films, which were fabricated directly on FTO glasses by anodizing the Ti film sputtered on the FTO glasses. Compared with pure TNT films, the prepared TNT-Au films possessed excellent absorption ability and high photocurrent response and improved photocatalytic activity under visible-light irradiation. It could be concluded that Au nanoparticles played important roles in improving the photoelectrochemical performance of TNT-Au films. Moreover, in this work, both sides of TNT-Au films were researched and compared owing to theirs semitransparency. It was firstly found that the photoelectric activity of TNT-Au composite films with back-side illumination was obviously superior to front-side illumination.

  8. Preparation and characterization of nanocrystalline porous TiO2/WO3 composite thin films

    International Nuclear Information System (INIS)

    Hsu, C.-S.; Lin, C.-K.; Chan, C.-C.; Chang, C.-C.; Tsay, C.-Y.

    2006-01-01

    TiO 2 materials possessing not only photocatalytic but also electrochromic properties have attracted many research and development interests. Though WO 3 exhibits excellent electrochromic properties, the much higher cost and water-sensitivity of WO 3 as compared with the TiO 2 may restrict the practical application of WO 3 materials. In the present study, the feasibility of preparing nanocrystalline porous TiO 2 /WO 3 composite thin films was investigated. Precursors of sols TiO 2 and/or WO 3 and polystyrene microspheres were used to prepare nanocrystalline pure TiO 2 , WO 3 , and composite TiO 2 /WO 3 thin films by spin coating. The spin-coated thin films were amorphous and, after heat treating at a temperature of 500 o C, nanocrystalline TiO 2 , TiO 2 /WO 3 , and WO 3 thin films with or without pores were prepared successfully. The heat-treated thin films were colorless and coloration-bleaching phenomena can be observed during cyclic voltammetry tests. The heat-treated thin films exhibited good reversible electrochromic behavior while the porous TiO 2 /WO 3 composite film exhibited improved electrochromic properties

  9. Hydrogen irradiation on TiO{sub 2} nano-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Heidari, Sh.; Mohammadizadeh, M.R. [University of Tehran, Superconductivity Research Laboratory (SRL), Department of Physics, Tehran (Iran, Islamic Republic of); Mahjour-Shafiei, M. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Larijani, M.M.; Malek, M. [Science and Technology Research Institute, Agricultural, Medical and Industrial Research School, Karaj (Iran, Islamic Republic of)

    2015-10-15

    Titanium dioxide thin films were coated on soda-lime glass substrates using spray pyrolysis method with a thickness of 152 ± 10 nm. The films were irradiated with hydrogen ions at room temperature at various beam energies and fluences. Optimized incident beam energy and beam fluence were obtained to improve photocatalytic and hydrophilicity properties of TiO{sub 2} thin films by narrowing the band gap. Samples were characterized by scanning electron microscopy to study the surface morphology and by UV-Vis absorption spectroscopy to measure the band gap. The optical band gap of H-doped anatase TiO{sub 2} thin films irradiated with hydrogen beam with energies of 2 and 4 keV and a fluence of 10{sup 15} ions/cm{sup 2} was narrowed from 3.34 eV (before irradiation) to 3.04 and 2.92 eV (after irradiation), respectively. The irradiated sample with energy of 4 keV with a fluence of 10{sup 15} ions/cm{sup 2} has the best improvement. This is attributed to the contraction of the band gap and to the increase in surface active site. Furthermore, it was observed that photocatalytic and hydrophilicity properties of this sample were improved, as well. (orig.)

  10. Nanocrystalline SnO2:F Thin Films for Liquid Petroleum Gas Sensors

    Directory of Open Access Journals (Sweden)

    Sutichai Chaisitsak

    2011-07-01

    Full Text Available This paper reports the improvement in the sensing performance of nanocrystalline SnO2-based liquid petroleum gas (LPG sensors by doping with fluorine (F. Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer. The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO2 films was investigated. Atomic Force Microscopy (AFM and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO2 with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time of the SnO2:F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO2 was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO2:F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection.

  11. Growth and Characteristic of Amorphous Nano-Granular TeO2-V2O5-NiO Thin Films

    Science.gov (United States)

    Hosseinzadeh, Sh.; Rahmati, A.; Bidadi, H.

    2016-12-01

    TeO2-V2O5-NiO thin films were deposited using thermal evaporation from 40TeO2-(60-y)V2O5-yNiO (y=0-30mol%) target. Structural analysis of the films was identified by X-ray diffractometry (XRD) and scanning electron microscopy (SEM). The amorphous TeO2-V2O5-NiO films have nanosized clear grain structure and sharp grain boundaries. DC conductivity and current-voltage (I-V) characteristic of TeO2-V2O5-NiO thin films were measured in the temperature range of 300-423K. As nickel oxide (NiO) content increases, the DC conductivity decreases up to two orders in value (10-9-10-11Sṡcm-1). Temperature dependence of conductivity is described using the small polaron hopping (SPH) model as well. Poole-Frenkel effect is observed at high external electric field. The optical absorption spectra of the TeO2-V2O5-NiO thin films were recorded in the wavelength range of 380-1100nm. The absorption coefficient revealed bandgap shrinkage (3.01-2.3eV) and band tail widening, due to an increase in NiO content. Energy dispersive X-ray spectroscopy (EDX) was used to determine elemental composition. In TeO2-V2O5-NiO thin films, the NiO content is around fifth of the initial target.

  12. Faceting of (001) CeO2 Films: The Road to High Quality TFA-YBa2Cu3O7 Multilayers

    International Nuclear Information System (INIS)

    Coll, M; Gazquez, J; Sandiumenge, F; Pomar, A; Puig, T; Obradors, X; Espinos, J P; Gonzalez-Elipe, A R

    2006-01-01

    CeO 2 films are technologically important as a buffer layer for the integration of superconducting YBa 2 Cu 3 O 7 films on biaxially textured Ni substrates. The growth of YBa 2 Cu 3 O 7 layers on the CeO 2 cap layers by the trifluoroacetate (TFA) route remains a critical issue. To improve the accommodation of YBa 2 Cu 3 O 7 on CeO 2 , surface conditioning or CeO 2 is required. In this work we have applied ex-situ post-processes at different atmospheres to the CeO 2 layers deposited on YSZ single crystals using rf sputtering. XPS analysis showed that post-annealing CeO 2 layer in Ar/H 2 /H 2 O catalyses in an unexpected way the growth of (001)- terraces. We also report on the growth conditions of YBa 2 Cu 3 O 7 -TFA on CeO 2 buffered YSZ single crystal grown by chemical solution deposition and we compare them with those leading to optimized YBa 2 Cu 3 O 7 -TFA films on LaAlO 3 single crystals. Critical currents up to 1.6 MA/cm 2 at 77 K have been demonstrated in 300 nm thick YBa 2 Cu 3 O 7 layers on CeO 2 /YSZ system. The optimized processing conditions have then been applied to grow YBa 2 Cu 3 O 7 -TFA films on Ni substrates having vacuum deposited cap layers of CeO 2

  13. Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O2 mixed-plasma treatment

    International Nuclear Information System (INIS)

    Kim, Kwan-Soo; Hwang, Yeong-Hyeon; Hwang, In-Chan; Cho, Won-Ju

    2014-01-01

    We investigated the effects of Ar and O 2 treatment and of Ar/O 2 mixed plasma treatment on the electrical characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The electrical performance and the instability of a-IGZO TFTs were significantly improved by the plasma treatments. The plasma treatments reduced the carbon-based residual contamination that acted as possible trap sites. In particular, the O 2 -plasma treatment produced a significant improvement in the reliability of a-IGZO TFTs when compared with the Ar-plasma-treated device, owing to the elimination of residual carbon in the active channel of the solution-processed a-IGZO. However, the optimized improvement of the solution-processed a-IGZO TFT under a gate bias stress was obtained for the device treated with an Ar/O 2 mixed-gas plasma. The plasma treatment in the Ar/O 2 -mixed ambience remarkably enhanced not only the reliability but also the electrical performance of the a-IGZO TFT; the on/off-current ratio, the field-effect mobility, and the subthreshold slope were 6.78 x 10 7 , 1.24 cm 2 /V·s, and 513 mV/dec, respectively.

  14. Sequential sputtered Co-HfO{sub 2} granular films

    Energy Technology Data Exchange (ETDEWEB)

    Chadha, M.; Ng, V.

    2017-03-15

    A systematic study of magnetic, magneto-transport and micro-structural properties of Co-HfO{sub 2} granular films fabricated by sequential sputtering is presented. We demonstrate reduction in ferromagnetic-oxide formation by using HfO{sub 2} as the insulting matrix. Microstructure evaluation of the films showed that the film structure consisted of discrete hcp-Co grains embedded in HfO{sub 2} matrix. Films with varying compositions were prepared and their macroscopic properties were studied. We correlate the variation in these properties to the variation in film microstructure. Our study shows that Co-HfO{sub 2} films with reduced cobalt oxide and varying properties can be prepared using sequential sputtering technique. - Highlights: • Co-HfO{sub 2} granular films were prepared using sequential sputtering. • A reduction in ferromagnetic-oxide formation is observed. • Co-HfO{sub 2} films display superparamagnetism and tunnelling magneto-resistance. • Varying macroscopic properties were achieved by changing film composition. • Applications can be found in moderate MR sensors and high –frequency RF devices.

  15. Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

    Directory of Open Access Journals (Sweden)

    Kaupo Kukli

    2017-02-01

    Full Text Available Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 °C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resistive states were observed in Ta2O5 films mixed with relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2.

  16. Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

    Science.gov (United States)

    Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

    2017-07-01

    Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

  17. Methylene blue photocatalytic mineralization under visible irradiation on TiO{sub 2} thin films doped with chromium

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Uribe, Carlos; Vallejo, William, E-mail: williamvallejo@mail.uniatlantico.edu.co; Ramos, Wilkendry

    2014-11-15

    Graphical abstract: - Highlights: • We used an easy and inexpensive technique to dope thin films of TiO{sub 2}. • We proved that hydroxyl radicals were generated under visible light irradiation by Cr:TiO{sub 2}. • We used a Haber–Weiss reaction through Cr:TiO{sub 2} catalyst to improve the photo-mineralization process. - Abstract: We studied changes in structural, optical and photocatalytic properties of TiO{sub 2} thin films due to doping process with chromium. Powders of undoped TiO{sub 2} and chromium-doped TiO{sub 2} (Cr:TiO{sub 2}) were synthesized by sol–gel method and, thin films were deposited by doctor blade method. The properties of the thin films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR) and diffuse reflectance. The XRD patterns indicated that doping process changed the crystalline phases radio of TiO{sub 2} thin films, furthermore, the optical analysis showed that band gap value of Cr:TiO{sub 2} thin films was 31% fewer than undoped TiO{sub 2} thin films. Along, Langmuir–Hinshelwood model was used to obtain kinetic information of the photo-mineralization process; results indicated that photocatalytic activity of Cr:TiO{sub 2} thin films were four times better than undoped TiO{sub 2} thin films; finally the synergic effect was tested by addition of the H{sub 2}O{sub 2}, photocatalytic yield was improved from 26% to 61% when methylene blue photo-mineralization was assisted with slightly amount of H{sub 2}O{sub 2}.

  18. Potentiodynamical deposition of nanostructured MnO2 film at the assist of electrodeposited SiO2 as template

    International Nuclear Information System (INIS)

    Wu, Lian-Kui; Xia, Jie; Hou, Guang-Ya; Cao, Hua-Zhen; Tang, Yi-Ping; Zheng, Guo-Qu

    2016-01-01

    Highlights: • MnO 2 -SiO 2 composite film is prepared by potentiodynamical deposition. • Hierarchical porous MnO 2 films is obtained after the etching of SiO 2 . • The obtained MnO 2 film electrode exhibit high specific capacitance. - Abstract: We report a novel silica co-electrodeposition route to prepare nanostructured MnO 2 films. Firstly, MnO 2 -SiO 2 composite film was fabricated on a stainless steel substrate by potentiodynamical deposition, i.e. cyclic deposition, and then the SiO 2 template was removed by simple immersion in concentrated alkaline solution, leading to the formation of a porous MnO 2 (po-MnO 2 ) matrix. The structure and morphology of the obtained films were characterized using Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The electrochemical properties of the po-MnO 2 film were evaluated by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS). Results showed that this porous MnO 2 derived from the MnO 2 -SiO 2 composite film exhibits good electrochemical performance for potential use as a supercapacitor material.

  19. Surface characterization of poly(methylmethacrylate) based nanocomposite thin films containing Al2O3 and TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Lewis, S.; Haynes, V.; Wheeler-Jones, R.; Sly, J.; Perks, R.M.; Piccirillo, L.

    2010-01-01

    Poly(methylmethacrylate) (PMMA) based nanocomposite electron beam resists have been demonstrated by spin coating techniques. When TiO 2 and Al 2 O 3 nanoparticles were directly dispersed into the PMMA polymer matrix, the resulting nanocomposites produced poor quality films with surface roughnesses of 322 and 402 nm respectively. To improve the surface of the resists, the oxide nanoparticles were encapsulated in toluene and methanol. Using the zeta potential parameter, it was found that the stabilities of the toluene/oxide nanoparticle suspensions were 7.7 mV and 19.4 mV respectively, meaning that the suspension was not stable. However, when the TiO 2 and Al 2 O 3 nanoparticles were encapsulated in methanol the zeta potential parameter was 31.9 mV and 39.2 mV respectively. Therefore, the nanoparticle suspension was stable. This method improved the surface roughness of PMMA based nanocomposite thin films by a factor of 6.6 and 6.4, when TiO 2 and Al 2 O 3 were suspended in methanol before being dispersed into the PMMA polymer.

  20. Effect of Cu2O morphology on photocatalytic hydrogen generation and chemical stability of TiO2/Cu2O composite.

    Science.gov (United States)

    Zhu, Lihong; Zhang, Junying; Chen, Ziyu; Liu, Kejia; Gao, Hong

    2013-07-01

    Improving photocatalytic activity and stability of TiO2/Cu2O composite is a challenge in generating hydrogen from water. In this paper, the TiO2 film/Cu2O microgrid composite was prepared via a microsphere lithography technique, which possesses a remarkable performance of producing H2 under UV-vis light irradiation, in comparison with pure TiO2 film, Cu2O film and TiO2 film/Cu2O film. More interesting is that in TiO2 film/Cu2O microgrid, photo-corrosion of Cu2O can be retarded. After deposition of Pt on its surface, the photocatalytic activity of TiO2/Cu2O microgrid in producing H2 is improved greatly.

  1. Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

    2013-01-01

    ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

  2. Improving chemical solution deposited YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} film properties via high heating rates

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M.P.; Dawley, J.T.; Clem, P.G.; Overmyer, D.L

    2003-12-01

    The superconducting and structural properties of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films grown from chemical solution deposited (CSD) metallofluoride-based precursors improve by using high heating rates to the desired growth temperature. This is due to avoiding the nucleation of undesirable a-axis grains at lower temperatures, from 650 to 800 deg. C in p(O{sub 2})=0.1%. Minimizing time spent in this range during the temperature ramp of the ex situ growth process depresses a-axis grain growth in favor of the desired c-axis orientation. Using optimized conditions, this results in high-quality YBCO films on LaAlO{sub 3}(1 0 0) with J{sub c}(77 K) {approx} 3 MA/cm{sup 2} for films thicknesses ranging from 60 to 140 nm. In particular, there is a dramatic decrease in a-axis grains in coated-conductors grown on CSD Nb-doped SrTiO{sub 3}(1 0 0) buffered Ni(1 0 0) tapes.

  3. Optical and photoelectrochemical studies on Ag{sub 2}O/TiO{sub 2} double-layer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chuan, E-mail: cli10@yahoo.com [Department of Biomedical Engineering, National Yang Ming University, Taipei, Taiwan 11221 (China); Department of Mechanical Engineering, National Central University, Jhongli, Taoyuan, Taiwan 32001 (China); Hsieh, J.H. [Department of Materials Engineering, Ming Chi University of Technology, Taishan, Taipei, Taiwan 24301 (China); Cheng, J.C. [Department of Electronic Engineering, National Taipei University of Technology, Taipei, Taiwan 10608 (China); Huang, C.C. [Department of Biomedical Engineering, National Yang Ming University, Taipei, Taiwan 11221 (China)

    2014-11-03

    When two different oxides films stacked together, if the absorption (upper) layer has both its conduction and valence bands more negatively lower than that of the layer underneath, then the photo-excited electrons can be forwarded to the underneath layer to become an effect of energy storage. Recent studies discovered that the double-layers of Cu{sub 2}O/TiO{sub 2} films possess such capacity. In order to investigate this specific phenomenon, we use a DC magnetron reactive sputtering to deposit a double-layer of Ag{sub 2}O/TiO{sub 2} films on glass substrate. The film thicknesses of the double-layer are 300 nm and 200 nm respectively. X-Ray diffraction (XRD), scanning electron microscope (SEM) and UV–VIS–NIR photospectrometer and photoluminance tests were used to study the structure, morphology, optical absorption and band gaps of the stacked films. From XRD and SEM, we can confirm the microstructures of each layer. The UV–VIS–NIR spectrum revealed that the optical absorption of Ag{sub 2}O/TiO{sub 2} fell in between the single film of Ag{sub 2}O and TiO{sub 2}. Further, two band gaps were estimated for Ag{sub 2}O/TiO{sub 2} films based on the Beer-Lambert law and Tauc plot. Photoluminance and photoelectrochemical tests indicated that delayed emission by electron-hole recombination and photoelectrical current was effectively support the mechanism of electrons transfer from Ag{sub 2}O to TiO{sub 2} at Ag{sub 2}O/TiO{sub 2} interface in the double-layer films. - Highlights: • A double-layer of Ag{sub 2}O/TiO{sub 2} films was deposited on glass substrate by sputtering. • XRD confirms the nanocrystalline structures of the stack deposited films. • UV–VIS–NIR spectroscopy shows the enhanced of optical absorption in Ag{sub 2}O/TiO{sub 2}. • Photoluminance and photoelectrochemical tests show electron-hole separation effect.

  4. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  5. Substrate decoration for improvement of current-carrying capabilities of YBa2Cu3Ox thin films

    International Nuclear Information System (INIS)

    Khoryushin, Alexey V.; Mozhaev, Peter B.; Mozhaeva, Julia E.; Bdikin, Igor K.; Zhao, Yue; Andersen, Niels H.; Jacobsen, Claus S.; Hansen, Jørn Bindslev

    2013-01-01

    Highlights: ► Effects of substrate decoration on properties of YBCO thin films were studied. ► Y 2 O 3 nanoparticles, ultra-thin Y 2 O 3 and Y:ZrO 2 layers were used as decoration layer. ► Decoration improves j C (5 T and 50 K) up to 0.97 MA/cm 2 vs. 0.76 MA/cm 2 for a reference film. ► Ultra-thin layer of yttria and yttria nanoparticles have a similar effect on YBCO. ► Y 2 O 3 decoration results in power law coefficient α = 0.3 vs. α = 0.4 for a reference film. -- Abstract: The effects of substrate decoration with yttria and Y:ZrO 2 on the structural and electrical properties of the YBa 2 Cu 3 O x (YBCO) thin films are studied. The films were deposited on (LaAlO 3 ) 3 –(Sr 2 AlTaO 8 ) 7 substrates by pulsed laser deposition. Two different structures of decoration layer were applied, a template layer of nanoparticles and an uniform ultra-thin layer. Significant improvement of current-carrying capabilities was observed, especially at high external magnetic fields. Structural studies of these films reveal the presence of extended linear defects in the YBCO matrix. The formation of these structures is attributed to seeding of randomly oriented YBCO grains due to suppression of epitaxy in the very beginning of the deposition. The films of both kinds of decoration layers show nearly the same improvement of j C over the reference film at 77 and 50 K: j C (5T and 50 K) reaches 0.92 and 0.97 MA/cm 2 for uniform and template decoration layers. At 5 and 20 K the effect of template decoration layers is more beneficial: j C (5T and 20 K) values are 3.5 and 4.1 MA/cm 2 , j C (5T and 5 K) values are 6.4 and 7.9 MA/cm 2 , for uniform and template decoration layers, respectively

  6. Crystallization and electrical resistivity of Cu{sub 2}O and CuO obtained by thermal oxidation of Cu thin films on SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    De Los Santos Valladares, L., E-mail: ld301@cam.ac.uk [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Salinas, D. Hurtado [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Dominguez, A. Bustamante [Laboratorio de Ceramicos y Nanomateriales, Facultad de Ciencias Fisicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima (Peru); Najarro, D. Acosta [Instituto de Fisica, Departamento de Materia Condensada, Universidad Nacional Autonoma de Mexico, Ap. Postal 20-364, CP 01000 (Mexico); Khondaker, S.I. [NanoScience Technology Centre and Department of Physics, University of Central Florida, Orlando, FL 32826 (United States); Mitrelias, T.; Barnes, C.H.W. [Cavendish Laboratory, University of Cambridge, J.J Thomson Av., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Departamento de Fisica, Universidade Federal de Pernambuco, 50670-901, Recife-Pe (Brazil); Majima, Y. [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan); CREST, Japan Science and Technology Agency (JST), 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

    2012-08-01

    In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO{sub 2}/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 Degree-Sign C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu {yields} Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO was detected. Pure Cu{sub 2}O films are obtained at 200 Degree-Sign C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 Degree-Sign C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases. - Highlights: Black-Right-Pointing-Pointer The crystallization and electrical resistivity of oxides in a Cu films are studied. Black-Right-Pointing-Pointer In annealing Cu films, the phase evolution Cu + Cu{sub 2}O {yields} Cu{sub 2}O {yields} Cu{sub 2}O + CuO {yields} CuO occurs. Black-Right-Pointing-Pointer A resistivity phase diagram, obtained from the current-voltage response, is presented. Black-Right-Pointing-Pointer Some decreases in the resistivity may be related to the crystallization.

  7. Study on plasma pre-functionalized PVC film grafted with TiO2/PVP to improve blood compatible and antibacterial properties

    International Nuclear Information System (INIS)

    Suganya, Arjunan; Shanmugavelayutham, Gurusamy; Rodríguez, Carmen Serra

    2017-01-01

    Research into the design of new biopolymers/polymer functionalized with nanoparticles is of tremendous interest to the medical sector, particularly with regard to blood-contacting devices. In this present study, a steady blood compatible and active antibacterial coating was fabricated by the grafting of titanium dioxide (TiO 2 )/polyvinylpyyrolidone (PVP) onto a polyvinyl chloride (PVC) film surface via the direct-current glow discharge plasma method. To enhance the chemical interaction between TiO 2 /PVP and PVC, the surfaces of the PVC films were functionalized by different plasmas (air, argon, and oxygen) before coating. In this study, the plasma parameters were varied, such as treatment time of about 5–20 min for a constant power of 100 W, potential 300 V, and a constant gas pressure of 2 Pa for air, argon, and oxygen gas environment. Then, the different plasma treatments on the PVC films, TiO 2 /PVP were grafted using a simple dip-coating method. In addition, the TiO 2 /PVP-grafted PVC films were characterized by contact angle, attenuated total reflectance Fourier transform infrared spectroscopy, field-emission scanning electron microscope, and x-ray photo electron spectroscopy. Importantly, TiO 2 /PVP is grafted onto the PVC surface due to the plasma-based retained functionality and demonstrates adhesive efficiency, which was observed by XPS. The bio-stability of the TiO 2 /PVP-modified PVC film was evaluated by in vitro platelet activation analysis and protein adsorption analysis. Then, the antibacterial properties were evaluated by the agar diffusion method against Escherichia coli . The result reveals that the grafting of TiO 2 /PVP was slightly higher for the 15 min oxygen plasma-functionalized PVC, which significantly decreases the platelet adhesion and protein adsorption. Moreover, the antibacterial properties of the 15 min oxygen plasma-functionalized PVC with TiO 2 /PVP-grafted film is also greatly improved compared with an air- and argon

  8. Surviving floods: leaf gas films improve O2 and CO2 exchange, root aeration, and growth of completely submerged rice

    DEFF Research Database (Denmark)

    Pedersen, Ole; Rich, Sarah Meghan; Colmer, Timothy David

    2009-01-01

    When completely submerged, the leaves of some species retain a surface gas film. Leaf gas films on submerged plants have recently been termed 'plant plastrons', analogous with the plastrons of aquatic insects. In aquatic insects, surface gas layers (i.e. plastrons) enlarge the gas–water interface...... or when in light, was improved considerably when leaf gas films were present. Thus, leaf gas films contribute to the submergence tolerance of rice, in addition to those traits already recognized, such as the shoot-elongation response, aerenchyma and metabolic adjustments to O2 deficiency and oxidative...... stress....

  9. Enhanced Optical and Electrical Properties of TiO_2 Buffered IGZO/TiO_2 Bi-Layered Films

    International Nuclear Information System (INIS)

    Moon, Hyun-Joo; Kim, Daeil

    2016-01-01

    In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO_2-deposited glass substrate to determine the effect of the thickness of a thin TiO_2 buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO_2 buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO_2 buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO_2 bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO_2 bi-layered films are likely to perform better in TCO applications than IGZO single layer films.

  10. CdO Doped Indium Oxide Thick Film as a Low Temperature H2S Gas Sensor

    Directory of Open Access Journals (Sweden)

    D. N. CHAVAN

    2011-06-01

    Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CdCl2 for different intervals of time. The surface modified (10 min In2O3 thick film showed maximum response to H2S gas (10 ppm than pure In2O3 thick film at 150 oC. Cadmium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the thick films indicates the key role played by cadmium oxide on the surface of thick films. The selectivity, gas response and recovery time of the thick films were measured and presented.

  11. Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

    Science.gov (United States)

    Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, R. P. H.; Bedzyk, M. J.; Mason, T. O.

    2014-01-01

    The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

  12. Effect of Ag film thickness on the optical and the electrical properties in CuAlO2/Ag/CuAlO2 multilayer films grown on glass substrates

    International Nuclear Information System (INIS)

    Oh, Dohyun; No, Young Soo; Kim, Su Youn; Cho, Woon Jo; Kwack, Kae Dal; Kim, Tae Whan

    2011-01-01

    Research highlights: The CuAlO 2 /Ag/CuAlO 2 multilayer films were grown on glass substrates using radio-frequency magnetron sputtering at room temperature. Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. The morphology Ag films with a thickness of 8 nm was uniform. The morphology of the Ag films inserted in the CuAlO 2 films significantly affected the optical transmittance and the resistivity of the CuAlO 2 films deposited on glass substrates. The maximum transmittance of the CuAlO 2 /Ag/CuAlO 2 multilayer films with a thickness of 8 nm was 89.16%. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films with an Ag film thickness of 18 nm was as small as about 2.8 x 10 -5 Ω cm. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films was decreased as a result of the thermal annealing treatment. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as TCO films in solar cells. - Abstract: Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. The resistivity of the 40 nm-CuAlO 2 /18 nm-Ag/40 nm-CuAlO 2 multilayer films was 2.8 x 10 -5 Ω cm, and the transmittance of the multilayer films with an Ag film thickness of 8 nm was approximately 89.16%. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as

  13. Solar control on irradiated Ta2O2 thin films

    International Nuclear Information System (INIS)

    Baydogan, N. D.; Zayim, E. Oe.

    2007-01-01

    Thin films consisting of Ta 2 O 5 have been used in industry in applications related to thin-film capacitors, optical waveguides, and antireflection coatings on solar cells. Ta 2 O 5 films are used for several special applications as highly refractive material and show different optical properties depending on the deposition methods. Sol-gel technique has been used for the preparation of Ta 2 O 5 thin films. Ta 2 O 5 thin films were prepared by sol-gel proses on glass substrates to obtain good quality films. These films were exposed to gamma radiation from Co-60 radioisotope. Ta 2 O 5 coated thin films were placed against the source and irradiated for 8 different gamma doses; between 0.35 and 21.00 kGy at room temperature. Energetic gamma ray can affect the samples and change its colour. On the other hand some of the Ta 2 O 5 coated thin films were irradiated with beta radiation from Sr-90 radioisotope. The effect of gamma irradiation on the solar properties of Ta 2 O 5 films is compared with that of beta irradiation. The solar properties of the irradiated thin films differ significantly from those of the unirradiated ones. After the irradiation of the samples transmittance and reflectance are measured for solar light between 300 and 2100 nm, by using Perkin Elmer Lambda 9 UV/VIS/NIR Spectrophotometer. Change in the direct solar transmittance, reflectance and absorptance with absorbed dose are determined. Using the optical properties, the redistribution of the absorbed component of the solar radiation and the shading coefficient (SC) are calculated as a function of the convective heat-transfer coefficient. Solar parameters are important for the determination of the shading coefficient. When the secondary internal heat transfer factor (qi), direct solar transmittance (□ e ), and solar factor (g) are known, it is possible to determine shading coefficient via the dose rates. The shading coefficient changes as the dose rate is increased. In this study, the shading

  14. Optical properties of CeO 2 thin films

    Indian Academy of Sciences (India)

    Cerium oxide (CeO2) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10-6 Torr. The thickness of CeO2 films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly ...

  15. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.; Quevedo-Ló pez, Manuel Angel Quevedo; Alshareef, Husam N.; Gnade, Bruce E.; Ramí rez-Bon, Rafael

    2010-01-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  16. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.

    2010-03-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  17. Asymmetric photoelectric property of transparent TiO{sub 2} nanotube films loaded with Au nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hui [College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024 (China); College of Applied Science, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China); Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024 (China); Liang, Wei, E-mail: 986903124@qq.com [College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024 (China); Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024 (China); Liu, Yiming; Zhang, Wanggang; Zhou, Diaoyu; Wen, Jing [College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024 (China); Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024 (China)

    2016-11-15

    Highlights: • Highly transparent films of TiO{sub 2} nanotube arrays were directly fabricated on FTO glasses. • Semitransparent TNT-Au composite films were obtained and exhibited excellent photoelectrocatalytic ability. • Back-side of TNT-Au composite films was firstly irradiated and tested to compare with front-side of films. - Abstract: Semitransparent composite films of Au loaded TiO{sub 2} nanotubes (TNT-Au) were prepared by sputtering Au nanoparticles on highly transparent TiO{sub 2} nanotubes films, which were fabricated directly on FTO glasses by anodizing the Ti film sputtered on the FTO glasses. Compared with pure TNT films, the prepared TNT-Au films possessed excellent absorption ability and high photocurrent response and improved photocatalytic activity under visible-light irradiation. It could be concluded that Au nanoparticles played important roles in improving the photoelectrochemical performance of TNT-Au films. Moreover, in this work, both sides of TNT-Au films were researched and compared owing to theirs semitransparency. It was firstly found that the photoelectric activity of TNT-Au composite films with back-side illumination was obviously superior to front-side illumination.

  18. Influence of the Porosity of the TiO2 Film on the Performance of the Perovskite Solar Cell

    Directory of Open Access Journals (Sweden)

    Xiaodan Sun

    2017-01-01

    Full Text Available The structure of mesoporous TiO2 (mp-TiO2 films is crucial to the performance of mesoporous perovskite solar cells (PSCs. In this study, we fabricated highly porous mp-TiO2 films by doping polystyrene (PS spheres in TiO2 paste. The composition of the perovskite films was effectively improved by modifying the mass fraction of the PS spheres in the TiO2 paste. Due to the high porosity of the mp-TiO2 film, PbI2 and CH3NH3I could sufficiently infiltrate into the network of the mp-TiO2 film, which ensured a more complete transformation to CH3NH3PbI3. The surface morphology of the mp-TiO2 film and the photoelectric performance of the perovskite solar cells were investigated. The results showed that an increase in the porosity of the mp-TiO2 film resulted in an improvement in the performance of the PSCs. The best device with the optimized mass fraction of 1.0 wt% PS in TiO2 paste exhibited an efficiency of 12.69%, which is 25% higher than the efficiency of the PSCs without PS spheres.

  19. Photocatalytic properties of porous TiO2/Ag thin films

    International Nuclear Information System (INIS)

    Chang, C.-C.; Chen, J.-Y.; Hsu, T.-L.; Lin, C.-K.; Chan, C.-C.

    2008-01-01

    In this study, nanocrystalline TiO 2 /Ag composite thin films were prepared by a sol-gel spin-coating technique. By introducing polystyrene (PS) spheres into the precursor solution, porous TiO 2 /Ag thin films were prepared after calcination at a temperature of 500 deg. C for 4 h. Three different sizes (50, 200, and 400 nm) of PS spheres were used to prepare porous TiO 2 films. The as-prepared TiO 2 and TiO 2 /Ag thin films were characterized by X-ray diffractometry (XRD) and by scanning electron microscopy to reveal structural and morphological differences. In addition, the photocatalytic properties of these films were investigated by degrading methylene blue under UV irradiation. When PS spheres of different sizes were introduced after calcination, the as-prepared TiO 2 films exhibited different porous structures. XRD results showed that all TiO 2 /Ag films exhibited a major anatase phase. The photodegradation of porous TiO 2 thin films prepared with 200 nm PS spheres and doped with 1 mol% Ag exhibited the best photocatalytic efficiency where ∼ 100% methylene blue was decomposed within 8 h under UV exposure

  20. Effect of TiN-ZrO{sub 2} intermediate layer on the microstructure and magnetic properties of FePt and FePt-SiO{sub 2}-C thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, K.F., E-mail: dongkf1981@163.com; Mo, W.Q.; Jin, F.; Song, J.L.

    2017-06-15

    Highlights: • The TiN-ZrO{sub 2} consisted of solid solution of Ti(Zr)ON segregated by amorphous ZrO{sub 2}. • With doping ZrO{sub 2} into TiN layer, grain size of FePt films significantly decreased. • By introducing TiN-ZrO{sub 2}/TiN combined layer, the magnetic properties were improved. - Abstract: The microstructures and magnetic properties of FePt based thin films grown on TiN-ZrO{sub 2} and TiN-ZrO{sub 2}/TiN intermediate layers were systematically investigated. The TiN-ZrO{sub 2} intermediate layer was granular consisting of grains of solid solution of Ti(Zr)ON segregated by amorphous ZrO{sub 2}. It was found with doping ZrO{sub 2} into TiN intermediate layer, grain size of FePt-SiO{sub 2}-C films significantly decreased. Simultaneously, the isolation was obviously improved and grain size distribution became more uniform. However, the magnetic properties of the FePt-SiO{sub 2}-C films grown on TiN-ZrO{sub 2} intermediate layers were slowly deteriorated, which was due to the disturbance of the epitaxial growth of FePt by amorphous ZrO{sub 2} in TiN-ZrO{sub 2} intermediate layer. In order to improve the TiN-ZrO{sub 2} (0 0 2) texture and the crystallinity of TiN-ZrO{sub 2}, TiN-ZrO{sub 2}/TiN combined intermediate layer was introduced. And the magnetic properties were improved, simultaneously, achieving the benefit of grain size reduction. For the FePt 4 nm-SiO{sub 2} 40 vol%-C 20 vol% film grown on TiN/TiN-ZrO{sub 2} 30 vol% combined intermediate layer, well isolated FePt (0 0 1) granular films with coercivity higher than 17.6 kOe and an average size as small as 6.5 nm were achieved.

  1. Electrochemical and optical properties of CeO2-SnO2 and CeO2-SnO2:X (X = Li, C, Si films

    Directory of Open Access Journals (Sweden)

    Berton Marcos A.C.

    2001-01-01

    Full Text Available Thin solid films of CeO2-SnO2 (17 mol% Sn and CeO2-SnO2:X (X = Li, C and Si were prepared by the sol-gel route, using an aqueous-based process. The addition of Li, C and Si to the precursor solution leads to films with different electrochemical performances. The films were deposited by the dip-coating technique on ITO coated glass (Donnelly Glass at a speed of 10 cm/min and submitted to a final thermal treatment at 450 °C during 10 min in air. The electrochemical and optical properties of the films were determined from the cyclic voltammetry and chronoamperometry measurements using 0.1 M LiOH as supporting electrolyte. The ion storage capacity of the films was investigated using in situ spectroelectrochemical method and during the insertion/extraction process the films remained transparent. The powders were characterized by thermal analysis (DSC/TGA and X-ray diffraction.

  2. Low-temperature sputtering of crystalline TiO2 films

    International Nuclear Information System (INIS)

    Musil, J.; Herman, D.; Sicha, J.

    2006-01-01

    This article reports on the investigation of reactive magnetron sputtering of transparent, crystalline titanium dioxide films. The aim of this investigation is to determine a minimum substrate surface temperature T surf necessary to form crystalline TiO 2 films with anatase structure. Films were prepared by dc pulsed reactive magnetron sputtering using a dual magnetron operating in bipolar mode and equipped with Ti(99.5) and ceramic Ti 5 O 9 targets. The films were deposited on unheated glass substrates and their structure was characterized by x-ray diffraction and surface morphology by atomic force microscopy. Special attention is devoted to the measurement of T surf using thermostrips pasted to the glass substrate. It was found that (1) T surf is considerably higher (approximately by 100 deg. C or more) than the substrate temperature T s measured by the thermocouple incorporated into the substrate holder and (2) T surf strongly depends on the substrate-to-target distance d s-t , the magnetron target power loading, and the thermal conductivity of the target and its cooling. The main result of this study is the finding that (1) the crystallization of sputtered TiO 2 films depends not only on T surf but also on the total pressure p T of sputtering gas (Ar+O 2 ), partial pressure of oxygen p O 2 , the film deposition rate a D , and the film thickness h (2) crystalline TiO 2 films with well developed anatase structure can be formed at T surf =160 deg. C and low values of a D ≅5 nm/min (3) the crystalline structure of TiO 2 film gradually changes from (i) anatase through (ii) anatase+rutile mixture, and (iii) pure rutile to x-ray amorphous structure at T surf =160 deg. C and p T =0.75 Pa when p O 2 decreases and a D increases above 5 nm/min, and (4) crystallinity of the TiO 2 films decreases with decreasing h and T surf . Interrelationships between the structure of TiO 2 film, its roughness, T surf , and a D are discussed in detail. Trends of next development are

  3. TiO{sub 2}/SiO{sub 2} porous composite thin films: Role of TiO{sub 2} areal loading and modification with gold nanospheres on the photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Levchuk, Irina, E-mail: irina.r.levchuk@gmail.com [Laboratory of Green Chemistry, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Laboratoire de Chimie, ENS Lyon, CNRS, Universite Claude Bernard Lyon 1, Universite de Lyon, UMR 5182, 46 allee d’Italie, 69364 Lyon (France); Sillanpää, Mika [Laboratory of Green Chemistry, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Guillard, Chantal [Institut de Recherches sur la Catalyse et l’Environnement, IRCELYON, CNRS—University of Lyon, 69100 (France); Gregori, Damia; Chateau, Denis; Parola, Stephane [Laboratoire de Chimie, ENS Lyon, CNRS, Universite Claude Bernard Lyon 1, Universite de Lyon, UMR 5182, 46 allee d’Italie, 69364 Lyon (France)

    2016-10-15

    Highlights: • Composite TiO{sub 2}/Au/SiO{sub 2} films were prepared by sol-gel. • Size of Au NPs was in range 5–7 nm. • Physico-chemical and photocatalytic properties of TiO{sub 2}/Au/SiO{sub 2} were tested. • After UVC treatment all coatings exhibit super-hydrophilic character. • Photocatalytic activity of thin films was associated with areal loading of TiO{sub 2}. - Abstract: The aim of the work was to study photocatalytic activity of composite TiO{sub 2}/Au/SiO{sub 2} thin films. Coatings were prepared using sol-gel technique. Physicochemical parameters of coatings were characterized using UV–vis spectrometry, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectrometry (XPS), inductively coupled plasma optical emission spectroscopy (ICP-OES), ellipsometry, tactile measurements, goniometry and diffuse reflectance measurements. The photocatalytic activity of the films was tested in batch mode using aqueous solution of formic acid. Changes of formic acid concentration were determined by means of high pressure liquid chromatography (HPLC). Increase of initial degradation rate of formic acid was detected for TiO{sub 2}/Au/SiO{sub 2} films with gold nanoparticle’s load 0.5 wt.% and 1.25 wt.%. However, deeper insights using more detailed characterization of these coatings demonstrated that the improvement of the photocatalytic activity is more probably attributed to an increase in the areal loading of TiO{sub 2}.

  4. Mechanical properties of Al2O3-doped (2 wt.%) ZnO films

    International Nuclear Information System (INIS)

    Kuriki, Shina; Kawashima, Toshitaka

    2007-01-01

    We report a new method of evaluating the adhesion of Al 2 O 3 -doped (2 wt.%) ZnO (AZO) thin films. The AZO films were deposited by DC reactive magnetron sputtering on plastic film (PET: polyethyleneterephthalate) at various sputtering pressures, power, and reactive gas-flow ratios. The adhesion test of the films was carried out using the nanoindentation system. The fracture point as determined by the load-displacement curve occurred at the time of separation between the thin film and the substrate. The integration value of load and displacement to the fracture point is defined as the degree of adhesion (S W ). The AZO films showed that adhesion increase as sputtering power increases and sputtering pressure decreases

  5. Sequential Ar-O2 sputtering of Y2O3, BaF2, and CuO targets for preparation of Y-Ba-Cu-O superconducting films without wet-O2 annealing

    International Nuclear Information System (INIS)

    Bhushan, M.; Strauss, A.J.; Finn, M.C.

    1989-01-01

    Superconducting Y-Ba-Cu-O (YBCO) films have been prepared by ex situ O 2 annealing of multilayer films deposited on yttria-stabilized zirconia substrates by sequential rf diode sputtering of Y 2 O 3 , BaF 2 , and CuO targets, all of which are chemically stable. If sputtering is performed in an Ar ambient, the as-deposited films contain sufficient F to require its removal by annealing in wet O 2 at about 800 degree C or above before the superconducting YBCO phase can be formed by annealing in dry O 2 . However, sputtering in an Ar-O 2 ambient greatly reduces the F content, making it possible to obtain the superconducting phase by annealing in dry O 2 only. If the ambient contains about 20% O 2 , films with T c (R=0)>85 K can be prepared without wet-O 2 annealing. The Ar-O 2 process therefore has the potential for in situ preparation of superconducting YBCO films

  6. Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

    International Nuclear Information System (INIS)

    Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

    2013-01-01

    With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

  7. Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn-Sn-O thin film transistors

    International Nuclear Information System (INIS)

    Yang, Bong Seob; Oh, Seungha; Lee, Ung Soo; Kim, Yoon Jang; Oh, Myeong Sook; Hwang, Cheol Seong; Kim, Hyeong Joon; Huh, Myung Soo; Jeong, Jae Kyeong

    2011-01-01

    Thin film transistors (TFTs) with In and Ga-free multicomponent Zn-Sn-Zr-O (ZTZO) channel layers were fabricated using the cosputtering approach. The incorporation of ZrO 2 into the Zn-Sn-O (ZTO) films increased the contact resistance, which led to the degradation of the transport properties. In contrast, the threshold voltage shift under negative bias illumination stress (NBIS) was largely improved from -12.5 V (ZTO device) to -4.2 V (ZTZO device). This improvement was attributed to the reduction in the oxygen vacancy defects in the ZTZO film, suggesting that the photoinduced transition from V O to V O 2+ was responsible for the NBIS-induced instability.

  8. Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al2O3 Sensing Film

    Directory of Open Access Journals (Sweden)

    Cuiling Sun

    2017-12-01

    Full Text Available The effects of UV-ozone (UVO treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs that use Al2O3 as the sensing film have been investigated. The Al2O3 sensing films are UVO-treated with various duration times and the corresponding EGFET sensing behaviours, such as sensitivity, hysteresis, and long-term stability, are electrically evaluated under various measurement conditions. Physical analysis is also performed to characterize the surface conditions of the UVO-treated sensing films using X-ray photoelectron spectroscopy and atomic force microscopy. It is found that UVO treatment effectively reduces the buried sites in the Al2O3 sensing film and subsequently results in reduced hysteresis and improved long-term stability of EGFET. Meanwhile, the observed slightly smoother Al2O3 film surface post UVO treatment corresponds to decreased surface sites and slightly reduced pH sensitivity of the Al2O3 film. The sensitivity degradation is found to be monotonically correlated with the UVO treatment time. A treatment time of 10 min is found to yield an excellent performance trade-off: clearly improved long-term stability and reduced hysteresis at the cost of negligible sensitivity reduction. These results suggest that UVO treatment is a simple and facile method to improve the overall sensing performance of the EGFETs with an Al2O3 sensing film.

  9. Synthesis of Cu2O from CuO thin films: Optical and electrical properties

    Directory of Open Access Journals (Sweden)

    Dhanya S. Murali

    2015-04-01

    Full Text Available Hole conducting, optically transparent Cu2O thin films on glass substrates have been synthesized by vacuum annealing (5×10−6 mbar at 700 K for 1 hour of magnetron sputtered (at 300 K CuO thin films. The Cu2O thin films are p-type and show enhanced properties: grain size (54.7 nm, optical transmission 72% (at 600 nm and Hall mobility 51 cm2/Vs. The bulk and surface Valence band spectra of Cu2O and CuO thin films are studied by temperature dependent Hall effect and Ultra violet photo electron Spectroscopy (UPS. CuO thin films show a significant band bending downwards (due to higher hole concentration than Cu2O thin films.

  10. Fabrication of a Cu{sub 2}O/Au/TiO{sub 2} composite film for efficient photocatalytic hydrogen production from aqueous solution of methanol and glucose

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xi; Dong, Haitai; Hu, Zhe; Qi, Zhong; Li, Laisheng, E-mail: llsh@scnu.edu.cn

    2017-05-15

    Highlights: • A Cu{sub 2}O/Au/TiO{sub 2} film was synthesized successfully. • Hydrogen production of Cu{sub 2}O/Au/TiO{sub 2} film improved significantly. • The highest hydrogen production rate of the film was 125.3 mmol/h/m{sup 2}. • A Z-scheme charge transfer pathway was proposed. - Abstract: A novel Cu{sub 2}O/Au/TiO{sub 2} photocatalyst composite film was fabricated on a copper substrate for photocatalytic hydrogen production. The composite films, Cu{sub 2}O/Au/TiO{sub 2}, were stepwise synthesized by using electrochemical deposition, photodeposition, and coating methods. First, a Cu{sub 2}O film was synthesized using the electrochemical deposition method, after which Au was deposited onto the Cu{sub 2}O film through in-site photodeposition. Finally, TiO{sub 2} was coated on the surface of the Cu{sub 2}O/Au film. Its morphology and surface chemical composition was characterized by SEM, TEM, XRD and XPS. The optical characteristics (UV–Vis DRS, PL spectrum) of the films were also examined. The photocatalytic hydrogen production rate of the Cu{sub 2}O/Au/TiO{sub 2} composite film from a 20% vol. methanol solution increased to125.3 mmol/h/m{sup 2} under 300 W xenon lamp light irradiation. Compared to the TiO{sub 2} (13.5 mmol/h/m{sup 2}) film and Cu{sub 2}O/TiO{sub 2} film (83.2 mmol/h/m{sup 2}), the Cu{sub 2}O/Au/TiO{sub 2} film showed excellent photocatalytic performance for hydrogen generation. The Cu{sub 2}O/Au/TiO{sub 2} film has highly effective photocatalytic properties, which are attributed to the Z-scheme system and can not only enhance the absorption of solar light but also suppress the recombination of photogenerated electron-hole pairs. It is worth noting that by introducing Au into the interface of Cu{sub 2}O/TiO{sub 2}, the surface plasmon resonance (SPR)-induced local electric field formed at the Au site induces a Z-scheme charge transfer pathway inside the composite film (Cu{sub 2}O/Au/TiO{sub 2}), which promotes both the charge of the

  11. Preparation and Characterization of PbO-SrO-Na2O-Nb2O5-SiO2 Glass Ceramics Thin Film for High-Energy Storage Application

    Science.gov (United States)

    Tan, Feihu; Zhang, Qingmeng; Zhao, Hongbin; Wei, Feng; Du, Jun

    2018-03-01

    PbO-SrO-Na2O-Nb2O5-SiO2 (PSNNS) glass ceramic thin films were prepared by pulsed laser deposition technology on heavily doped silicon substrates. The influence of annealing temperatures on microstructures, dielectric properties and energy storage performances of the as-prepared films were investigated in detail. X-ray diffraction studies indicate that Pb2Nb2O7 crystallizes at 800°C and disappears at 900°C, while NaNbO3 and PbNb2O6 are formed at the higher temperature of 900°C. The dielectric properties of the glass ceramics thin films have a strong dependence on the phase assemblages that are developed during heat treatment. The maximum dielectric constant value of 171 was obtained for the film annealed at 800°C, owing to the high electric breakdown field strength, The energy storage densities of the PSNNS films annealed at 800°C were as large as 36.9 J/cm3, These results suggest that PSNNS thin films are promising for energy storage applications.

  12. Enhanced electrochromic properties of TiO2 nanoporous film prepared based on an assistance of polyethylene glycol

    Science.gov (United States)

    Xu, Shunjian; Luo, Xiaorui; Xiao, Zonghu; Luo, Yongping; Zhong, Wei; Ou, Hui; Li, Yinshuai

    2017-01-01

    Polyethylene glycol (PEG) was employed as pore-forming agent to prepare TiO2 nanoporous film based on spin-coating a TiO2 nanoparticle mixed paste on fluorine doped tin oxide (FTO) glass. The electrochromic and optical properties of the obtained TiO2 film were investigated by cyclic voltammetry (CV), chronoamperometry (CA) and UV-Vis spectrophotometer. The results show that the PEG in the mixed paste endows the TiO2 film with well-developed porous structure and improves the uniformity of the TiO2 film, which are helpful for the rapid intercalation and extraction of lithium ions within the TiO2 film and the strengthening of the diffuse reflection of visible light in the TiO2 film. As a result, the TiO2 film derived from the mixed paste with PEG displays higher electrochemical activity and more excellent electrochromic performances compared with the TiO2 film derived from the mixed paste without PEG. The switching times of coloration/bleaching are respectively 10.16/5.65 and 12.77/6.13 s for the TiO2 films with PEG and without PEG. The maximum value of the optical contrast of the TiO2 film with PEG is 21.2% while that of the optical contrast of the TiO2 film without PEG is 14.9%. Furthermore, the TiO2 film with PEG has better stability of the colored state than the TiO2 film without PEG.

  13. Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O{sub 2} mixed-plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kwan-Soo; Hwang, Yeong-Hyeon; Hwang, In-Chan; Cho, Won-Ju [Kwangwoon University, Seoul (Korea, Republic of)

    2014-08-15

    We investigated the effects of Ar and O{sub 2} treatment and of Ar/O{sub 2} mixed plasma treatment on the electrical characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The electrical performance and the instability of a-IGZO TFTs were significantly improved by the plasma treatments. The plasma treatments reduced the carbon-based residual contamination that acted as possible trap sites. In particular, the O{sub 2}-plasma treatment produced a significant improvement in the reliability of a-IGZO TFTs when compared with the Ar-plasma-treated device, owing to the elimination of residual carbon in the active channel of the solution-processed a-IGZO. However, the optimized improvement of the solution-processed a-IGZO TFT under a gate bias stress was obtained for the device treated with an Ar/O{sub 2} mixed-gas plasma. The plasma treatment in the Ar/O{sub 2}-mixed ambience remarkably enhanced not only the reliability but also the electrical performance of the a-IGZO TFT; the on/off-current ratio, the field-effect mobility, and the subthreshold slope were 6.78 x 10{sup 7}, 1.24 cm{sup 2}/V·s, and 513 mV/dec, respectively.

  14. Sol-gel prepared B2O3-SiO2 thin films for protection of copper substrates

    International Nuclear Information System (INIS)

    Gouda, M.; Ahmed, M.S.; Shahin, M.A.

    2000-01-01

    Full text.Borosilicate coating has potential for applications in the field of electronics, e.g., as passivation layers. One of the main difficulties for applying these films by the conventional melting process is the extensive volatilization of B 2 O 3 from the melt. In this work transparent borosilicate films of 2OB 2 O3.8OSiO 2 (in mole %). Prepared by the sole gel method, were applied onto copper substrates by dip-coating technique. The transparency of these films was very sensitive to the humidity of the atmosphere during the coating process. Transparent films were obtained below 20% relative humidity at 20 celsius degree. High temperature oxidation tests, at about 585 celsius degree stream of air, showed that the sol-gel prepared 2OB 2 O 3 .8OSiO 2 thin films are protective coating for copper substrates under fairly severe temperature gradient and oxidizing atmosphere. It was found that the protective action of these films depends on the film thickness

  15. Improved transparent-conducting properties in N2- and H2- annealed GaZnO thin films grown on glass substrates

    International Nuclear Information System (INIS)

    Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon

    2012-01-01

    The effects of N 2 - and H 2 - annealing on the transparent-conducting properties of Ga-doped ZnO (GaZnO) were examined. The as-grown GaZnO thin film, which was deposited on a soda-lime glass substrate by r.f. magnetron sputtering, exhibited moderate transparent-conducting properties: a resistivity of ∼10 0 Ω·cm and an optical transmittance of ∼86%. After annealing in N 2 or H 2 , the GaZnO samples showed great improvements in both the electrical and the optical properties. Particularly, in the H 2 -annealed sample, a dramatic decrease in the resistivity (7 x 10 -4 Ω·cm) with a considerable increase in the carrier concentration (4.22 x 10 21 cm -3 ) was observed. This is attributed to both an increase in the number of Ga-O bonds and a reduction in the number of chemisorbed oxygen atoms though H 2 annealing. The sample revealed an enhanced optical transmittance (∼91%), which comes from the Burstein-Moss effect. Namely, a blue-shift of the optical absorption edge, which results from the increased carrier concentration, was observed in the H 2 -annealed sample. The results suggest that hydrogen annealing can help improve the transparent conducting properties of GaZnO via a modification of the electrochemical bonding structures.

  16. Raman spectra of TiO2 thin films deposited electrochemically and by spray pyrolysis

    International Nuclear Information System (INIS)

    Shishiyanu, S.; Vartic, V.; Shishiyanu, T.; Stratan, Gh.; Rusu, E.; Zarrelli, M.; Giordano, M.

    2013-01-01

    In this paper we present our experimental results concerning the fabrication of TiO 2 thin films by spray pyrolysis and electrochemical deposition method onto different substrates - Corning glass, Si and optical fibers. The surface morphology of the TiO 2 thin films have been investigated by Atomic Force Microscopy. Raman shift spectra measurements have been done for the optical characterization of the fabricated titania thin films. The post-growth rapid photothermal processing (RPP) at temperatures of 100-800 degrees Celsius for 1-3 min have been applied. Our experimental results prove that by the application of post-growth RPP is possible to essentially improve the crystallinity of the deposited TiO 2 films. (authors)

  17. Deposition of Au/TiO2 film by pulsed laser

    International Nuclear Information System (INIS)

    Zhao Chongjun; Zhao Quanzhong; Zhao Qitao; Qiu Jianrong; Zhu Congshan

    2006-01-01

    Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl 4 solution containing TiO 2 colloid and accompanied by the TiO 2 particles, were deposited on the substrate surface. The film consisting of Au/TiO 2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO 2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO 2 film was also discussed

  18. Preparation of Ag/TiO{sub 2}/SiO{sub 2} films via photo-assisted deposition and adsorptive self-assembly for catalytic bactericidal application

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Baojuan, E-mail: baojuanxi@gmail.com [Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Chu, Xiaona; Hu, Jiangyong [Department of Civil and Environmental Engineering, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Bhatia, Charanjit Singh; Danner, Aaron James; Yang, Hyunsoo [Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent, Singapore 119260 (Singapore)

    2014-08-30

    Highlights: • We prepared controlledly the silver nanoparticles on TiO{sub 2}/SiO{sub 2} film by the facile photoreduction under the aid of structure-directing agents. • We studied the effect of silver loading on the antibactierial behavior of TiO{sub 2} film and optimized the content of silver. • We extended the route to fabricate other metals on substrates. - Abstract: The deterioration of water supply quality due to the waterborne bacteria is an environmental problem requiring the urgent attention. Due to the excellent and synergic antimicrobial capability, Ag-loaded TiO{sub 2} photocatalyst emerges as a feasible measure to guard the water. In our work, Ag nanoparticles have been prepared by the photoassisted reduction of AgNO{sub 3} on the TiO{sub 2} film fabricated by solution-based adsorptive self-assembly approach. The role of surfactant on the growth rate and size controlling of particles is also studied. In this connection, different kinds of surfactants, such as PVP, Tween-20, Tween-40 and so on, are applied in the system to investigate the formation of Ag nanoparticles. The surface profile and elemental analysis of Ag/TiO{sub 2}/SiO{sub 2} films are examined by scanning electron microscopy and attached energy-dispersive X-ray spectroscopy, respectively. In the anti-bacteria detection, Ag nanoparticles are found to enhance the bactericidal efficiency strongly comparing with the pure TiO{sub 2} film under the same condition. In addition, by comparison with Ag/TiO{sub 2}/SiO{sub 2} film in the dark environment as the reference experiment, UV–visible light plays a vital role in the improved bactericidal behavior, demonstrating the more efficient charge separation induced by metal silver. Because of the versatility of the method, the present photoreductive route is also exploited for the synthesis of Au nanoparticles on TiO{sub 2}/SiO{sub 2} films. The corresponding photocatalytical detection results demonstrate the loading of Au nanoparticles can

  19. Ag2S/CdS/TiO2 Nanotube Array Films with High Photocurrent Density by Spotting Sample Method

    OpenAIRE

    Sun, Hong; Zhao, Peini; Zhang, Fanjun; Liu, Yuliang; Hao, Jingcheng

    2015-01-01

    Ag2S/CdS/TiO2 hybrid nanotube array films (Ag2S/CdS/TNTs) were prepared by selectively depositing a narrow-gap semiconductor—Ag2S (0.9 eV) quantum dots (QDs)—in the local domain of the CdS/TiO2 nanotube array films by spotting sample method (SSM). The improvement of sunlight absorption ability and photocurrent density of titanium dioxide (TiO2) nanotube array films (TNTs) which were obtained by anodic oxidation method was realized because of modifying semiconductor QDs. The CdS/TNTs, Ag2S/TNT...

  20. Graphene Oxide-TiO2 Nanocomposite Films for Electron Transport Applications

    Science.gov (United States)

    Saleem, Abida; Ullah, Naveed; Khursheed, Kamran; Iqbal, Tahir; Shah, Saqlain A.; Asjad, Muhammad; Sarwar, Nazim; Saleem, Murtaza; Arshad, Muhammad

    2018-03-01

    Graphene oxide-titanium dioxide (GO-TiO2) nanocomposite thin films were prepared for application as the window layer of perovskite solar cells. Graphene oxide (GO) was prepared by a modified Hummer's method, and titanium dioxide (TiO2) nanoparticles were synthesized by hydrothermal solution method. Thin films of GO-TiO2 nanocomposite were prepared with different wt.% of GO by spin coating on indium tin oxide (ITO) substrate followed by annealing at 150°C. X-ray diffraction analysis revealed rutile phase of TiO2 nanostructures. The bandgap of the pure TiO2 thin film was found to be 3.5 eV, reducing to 2.9 eV for the GO-TiO2 nanocomposites with a red-shift towards higher wavelength. Furthermore, thermal postannealing at 400°C improved the transparency in the visible region and decreased the sheet resistance. Morphological and elemental analysis was performed by scanning electron microscopy and energy-dispersive x-ray spectroscopy, respectively. The current-voltage characteristic of the GO-TiO2 nanocomposites indicated Ohmic contact with the ITO substrate. The chemical composition of the as-synthesized GO-TiO2 nanocomposites was investigated by x-ray photoelectron spectroscopy (XPS). The results presented herein demonstrate a new, low-temperature solution-processing approach to obtain rGO-TiO2 composite material for use as the electron transport layer of perovskite solar cells.

  1. Solid phase crystallisation of HfO2 thin films

    International Nuclear Information System (INIS)

    Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

    2005-01-01

    In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

  2. Passivation of pigment-grade TiO2 particles by nanothick atomic layer deposited SiO2 films

    International Nuclear Information System (INIS)

    King, David M; Liang Xinhua; Weimer, Alan W; Burton, Beau B; Akhtar, M Kamal

    2008-01-01

    Pigment-grade TiO 2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO 2 and Al 2 O 3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO 2 films were deposited using tris-dimethylaminosilane (TDMAS) and H 2 O 2 at 500 deg. C. Trimethylaluminum and water were used as precursors for Al 2 O 3 ALD at 177 deg. C. The photocatalytic activity of anatase pigment-grade TiO 2 was decreased by 98% after the deposition of 2 nm SiO 2 films. H 2 SO 4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO 2 digest rate was 40 times faster for uncoated TiO 2 than SiO 2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H 2 O 2 chemistry can deposit high quality, fully dense SiO 2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO 2 particles

  3. Improvement of physical properties of ZnO thin films by tellurium doping

    Energy Technology Data Exchange (ETDEWEB)

    Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

    2014-11-01

    Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

  4. Filmes finos de SrBi2Ta2O9 processados em forno microondas SrBi2Ta2O9 thin films processed in microwave oven

    Directory of Open Access Journals (Sweden)

    J. S. Vasconcelos

    2003-03-01

    Full Text Available Filmes finos de SrBi2Ta2O9 foram depositados em substratos de Pt/Ti/SiO2/Si e, pela primeira vez, sinterizados em forno microondas doméstico. Os padrões de difração de raios X mostraram que os filmeso policristalinos. O processamento por microondas permite utilizar baixa temperatura na síntese e obter filmes com boas propriedades elétricas. Ensaios de microscopia eletrônica de varredura (MEV e de Força Atômica (MFA revelam boa aderência entre filme e substrato, com microestrutura de superfície apresentando grãos finos e esféricos e rugosidade de 4,7 nm. A constante dielétrica e o fator de dissipação, para freqüência de 100 KHz, à temperatura ambiente, foram de 77 e 0,04, respectivamente. A polarização remanescente (2Pr e o campo coercitivo (Ec foram 1,04 miC/cm² e 33 kV/cm. O comportamento da densidade de corrente de fuga revela três mecanismos de condução: linear, ôhmico e outro mecanismo que pode ser atribuído à corrente de Schottky. Dos padrões de DRX, análises das imagens por MEV e topografia de superfície por MFA observa-se que 10 min de tratamento térmico a 550 ºC, em forno microondas, é tempo suficiente para se obter a cristalização do filme.SrBi2Ta2O9 thin films were deposited on Pt/Ti/SiO2/Si substrates and, for the first time, sintered in a domestic microwave oven. The X-ray diffraction patterns showed that the films are polycrystalline. The microwave processing allows to use a low temperature for the synthesis, obtaining films with good electrical properties. Scanning Electron Microscopy (SEM and Atomic Force Microscopy (AFM results reveal good adherence between film and substrate and a surface microstructure presenting thin and spherical grains and roughness of 4.7 nm. The dielectric constant and the dissipation factor, for a frequency of 100 KHz at room temperature, were 77 and 0.04, respectively. The remaining polarization (2Pr and the coercive field (Ec were 1.04 C/cm² and 33 k

  5. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-01-01

    We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

  6. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Chunfeng Lan

    2018-02-01

    Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

  7. Preparation and Characterization of Epitaxial VO2 Films on Sapphire Using Postepitaxial Topotaxy Route via Epitaxial V2O3 Films

    Science.gov (United States)

    Yamaguchi, Iwao; Manabe, Takaaki; Tsuchiya, Tetsuo; Nakajima, Tomohiko; Sohma, Mitsugu; Kumagai, Toshiya

    2008-02-01

    Epitaxial VO2 films were prepared on the C-planes of α-Al2O3 substrates by a metal organic deposition (MOD) process. It was difficult to obtain the single phase of (010)M-oriented VO2 films, in which the subscript M refers to the monoclinic indices, by the heat treatment of amorphous precursor films in the VO2-stable region after the pyrolysis of the coating solution. The product films consisted of discontinuous circular grains of 1-2 µm size on the substrate surface. Therefore, we prepared the (010)M-oriented epitaxial VO2 films using postepitaxial topotaxy (PET), that is, topotactic oxidation of (0001)-oriented epitaxial V2O3 films. First, epitaxial V2O3(0001) films were obtained by MOD starting with a vanadium naphthenate solution. Second, the epitaxial V2O3(0001) films were topotactically oxidized at 500 °C in an Ar-O2 gas mixture with pO2 = 10-4 atm to obtain (010)M-oriented epitaxial VO2 films. The epitaxial relationships were VO2(010)M ∥ α-Al2O3(0001) and VO2[100]M ∥ α-Al2O3[0110], [1010], [1100]. The VO2(010)M films exhibited metal-semiconductor transitions with hysteresis loops at 60-80 °C. The resistivity change before and after the transition of the VO2(010)M film oxidized for 6 h was three orders of magnitude.

  8. The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

    Science.gov (United States)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2017-12-01

    The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

  9. The influence of metal interlayers on the structural and optical properties of nano-crystalline TiO 2 films

    KAUST Repository

    Yang, Yong

    2012-03-01

    TiO 2-M-TiO 2 (M = W, Co and Ag) multilayer films have been deposited on glass substrates using reactive magnetron sputtering, then annealed in air for 2 h at 500°C. The structure, surface morphology and optical properties of the films have been studied using X-ray diffraction, Raman spectroscopy, atomic force microscopy and UV-vis spectroscopy. The TiO 2-W-TiO 2 and TiO 2-Co-TiO 2 films showed crystalline phases, whereas the TiO 2-Ag-TiO 2 films remained in the amorphous state. The crystallization temperature for the TiO 2-M-TiO 2 films decreased significantly compared with pure TiO 2 film deposited on quartz. Detailed analysis of the Raman spectra suggested that the crystallization of TiO 2-M-TiO 2 films was associated with the large structural deformation imposed by the oxidation of intermediate metal layers. Moreover, the optical band gap of the films narrowed due to the appearance of impurity levels as the metal ions migrated into the TiO 2 matrix. These results indicate that the insertion of intermediate metal layers provides a feasible access to improve the structural and optical properties of anatase TiO 2 films, leading to promising applications in the field of photocatalysis. © 2011 Elsevier B.V. All rights reserved.

  10. Preparation and properties of KCl-doped Cu{sub 2}O thin film by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xiaojiao, E-mail: yxjw@xaut.edu.cn [Xi’an University of Technology, Xi’an 710048 (China); Li, Xinming [Xi’an University of Technology, Xi’an 710048 (China); Zheng, Gang [Xi’an University of Technology, Xi’an 710048 (China); Northwestern Polytechnical University, Xi’an 710072 (China); Wei, Yuchen [The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Zhang, Ama; Yao, Binghua [Xi’an University of Technology, Xi’an 710048 (China)

    2013-04-01

    With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu{sub 2}O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu{sub 2}O crystal morphology, thus, making Cu{sub 2}O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu{sub 2}O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu{sub 2}O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu{sub 2}O thin film surface resistivity decreases from the initial 2.5 × 10{sup 6} Ω cm to 8.5 × 10{sup 4} Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10{sup 2} Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

  11. Oriented monolayer film of Gd2O3:0.05 Eu crystallites: quasi-topotactic transformation of the hydroxide film and drastic enhancement of photoluminescence properties.

    Science.gov (United States)

    Hu, Linfeng; Ma, Renzhi; Ozawa, Tadashi C; Sasaki, Takayoshi

    2009-01-01

    Caught on film: A semitransparent and intensely luminescent monolayer film of oriented Gd(2)O(3):0.05 Eu platelet crystallites is fabricated by annealing the precursor hydroxide film (see scheme). The photoluminescence properties of the as-transformed film are greatly improved over those of the hydroxide film, and are much more pronounced than those of the corresponding Gd(2)O(3):0.05 Eu powder.

  12. Relationship between nano/micro structure and physical properties of TiO2-sodium caseinate composite films.

    Science.gov (United States)

    Montes-de-Oca-Ávalos, Juan Manuel; Altamura, Davide; Candal, Roberto Jorge; Scattarella, Francesco; Siliqi, Dritan; Giannini, Cinzia; Herrera, María Lidia

    2018-03-01

    Films obtained by casting, starting from conventional emulsions (CE), nanoemulsions (NE) or their gels, which led to different structures, with the aim of explore the relationship between structure and physical properties, were prepared. Sodium caseinate was used as the matrix, glycerol as plasticizer, glucono-delta-lactone as acidulant to form the gels, and TiO 2 nanoparticles as reinforcement to improve physical behavior. Structural characterization was performed by SAXS and WAXS (Small and Wide Angle X-ray Scattering, respectively), combined with confocal and scanning electron microscopy. The results demonstrate that the incorporation of the lipid phase does not notably modify the mechanical properties of the films compared to solution films. Films from NE were more stable against oil release than those from CE. Incorporation of TiO 2 improved mechanical properties as measured by dynamical mechanical analysis (DMA) and uniaxial tensile tests. TiO 2 macroscopic spatial distribution homogeneity and the nanostructure character of NE films were confirmed by mapping the q-dependent scattering intensity in scanning SAXS experiments. SAXS microscopies indicated a higher intrinsic homogeneity of NE films compared to CE films, independently of the TiO 2 load. NE-films containing structures with smaller and more homogeneously distributed building blocks showed greater potential for food applications than the films prepared from sodium caseinate solutions, which are the best known films. Copyright © 2017 Elsevier Ltd. All rights reserved.

  13. Synthesis and cathodoluminescence characterization of ZrO2:Er3+ films

    International Nuclear Information System (INIS)

    Martínez-Hernández, A.; Guzmán-Mendoza, J.; Rivera-Montalvo, T.; Sánchez-Guzmán, D.; Guzmán-Olguín, J.C.; García-Hipólito, M.; Falcony, C.

    2014-01-01

    Trivalent erbium doped zirconium oxide films were deposited by the ultrasonic spray pyrolysis technique. Films were deposited using zirconium tetrachloride octahydrate (ZrCl 4 O·8H 2 O) and erbium nitrate hexahydrate ((NO 3 ) 3 Er·6H 2 O) as precursors and deionized water as solvent. The dopant concentrations in the spray solution were 1, 3, 5, 10 and 15 at% in ratio to zirconium content. The films were deposited on corning glass substrates at different temperatures from 400 up to 550 °C. Films deposited at temperatures lower than 400 °C were amorphous, however, as substrate temperatures are increased, the ZrO 2 films presented a better crystallinity and showed a tetragonal phase. Cathodoluminescence (CL) emission spectra showed bands centred at 524, 544 and 655 nm associated with the electronic transition of Er 3+ . - Highlights: • The films of ZrO 2 :Er 3+ were obtained by spray pyrolysis. • Emission spectra of ZrO 2 :Er 3+ films were reported. • Cathodoluminescence of ZrO 2 :Er 3+ films was analyzed. • Cathodoluminescence of ZrO 2 :Er 3+ films showed strong dependence on substrate temperature and electron voltage

  14. Synthesis and magnetotransport studies of CrO2 films grown on TiO2 nanotube arrays by chemical vapor deposition

    Science.gov (United States)

    Wang, Xiaoling; Zhang, Caiping; Wang, Lu; Lin, Tao; Wen, Gehui

    2018-04-01

    The CrO2 films have been prepared on the TiO2 nanotube array template via atmospheric pressure chemical vapor deposition method. And the growth procedure was studied. In the beginning of the deposition process, the CrO2 grows on the cross section of the TiO2 nanotubes wall, forms a nanonet-like layer. And the grain size of CrO2 is very small. With the increase of the deposition time, the grain size of CrO2 also increases, and the nanonet-like layer changes into porous film. With the further increase of the deposition time, all the nanotubes are covered by CrO2 grains and the surface structure becomes polycrystalline film. The average grain size on the surface of the CrO2 films deposited for 1 h, 2 h and 5 h is about 190 nm, 300 nm and 470 nm. The X-ray diffraction pattern reveals that the rutile CrO2 film has been synthesized on the TiO2 nanotube array template. The CrO2 films show large magnetoresistance (MR) at low temperature, which should originate from spin-dependent tunneling through grain boundaries between CrO2 grains. And the tunneling mechanism of the CrO2 films can be well described by the fluctuation-induced tunneling (FIT) model. The CrO2 film deposited for 2 h shows insulator behavior from 5 k to 300 K, but the CrO2 film deposited for 5 h shows insulator-metal transition around 140 K. The reason is briefly discussed.

  15. Nano Ag-Doped In2O3 Thick Film: A Low-Temperature H2S Gas Sensor

    Directory of Open Access Journals (Sweden)

    D. N. Chavan

    2011-01-01

    Full Text Available Thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performances of thick films were tested for various gases. It showed maximum sensitivity to ethanol vapour at 350°C for 80 ppm concentration. To improve the sensitivity and selectivity of the film towards a particular gas, In2O3 sensors were surface-modified by dipping them in a solution of 2% nanosilver for different intervals of time. Obtained results indicated that spherical nano-Ag grains are highly dispersed on the surface of In2O3sensor. The surface area of the nano-Ag/ In2O3 sensor is several times larger than that of pure In2O3 sensor. In comparison with pure In2O3 sensor, all of the nano-Ag-doped sensors showed better sensing performance in respect of response, selectivity, and optimum operating temperature. The surface-modified (30 min In2O3 sensor showed larger sensitivity to H2S gas (10 ppm at 100°C. Nano silver on the surface of the film shifts the reactivity of film from ethanol vapour to H2S gas. A systematic study of gas sensing performance of the sensor indicates the key role played by the nano silver species on the surface. The sensitivity, selectivity, response, and recovery time of the sensor were measured and presented.

  16. Nano-structure TiO2 film coating on 316L stainless steel via sol-gel technique for blood compatibility improvement

    Directory of Open Access Journals (Sweden)

    Mohammadreza Foruzanmehr

    2014-04-01

    Full Text Available   Objective(s: Titanium oxides are known to be appropriate hemocompatible materials which are suggested as coatings for blood-contacting devices. Little is known about the influence of nanometric crystal structure, layer thickness, and semiconducting characteristics of TiO2 on blood hemostasis.   Materials and Methods: Having used sol-gel dip coating method in this study, TiO2 thin films were deposited on nano-scale electro-polished stainless steel 316L with 1 to 5 nano-sized layers. Surface morphology and structure of the film were studied with X-ray diffraction and atomic force microscopy. Blood compatibility was also determined by measuring the platelet activation (CD62P expression, platelet adhesion (Scanning Electron Microscopy, and the blood clotting time on these samples. Results: The films were compact and smooth and existed mainly in the form of anatase. By increasing the number of TiO2 thin layer, clotting time greatly extended, and the population of activated platelet and P-selectine expression changed according to the surface characteristics of each layer. Conclusion: The findings revealed that stainless steel 316L coated with nano-structured TiO2 layer improved blood compatibility, in terms of both blood platelet activity and coagulation cascade, which can decrease the thrombogenicity of blood contacting devices which were made from stainless steel.

  17. TiO2-BASED Composite Films for the Photodegradation of Oxytetracycline

    Science.gov (United States)

    Li, Hui; Guan, Ling-Xiao; Feng, Ji-Jun; Li, Fang; Yao, Ming-Ming

    2015-02-01

    The spread of the antibiotic oxytetracycline (OTC) has been thought as a threat to the safety of drinking water. In this paper, the photocatalytic activity of the nanocrystalline Fe/Ca co-doped TiO2-SiO2 composite film for the degradation of OTC was studied. The films were characterized by field emission scanning electron microscopy (FE-SEM) equipped with energy-dispersive spectroscopy (EDS), N2 adsorption/desorption isotherms, photoluminescence (PL) spectra, and UV-Vis diffraction reflectance absorption spectra (DRS). The FE-SEM results indicated that the Fe/Ca co-doped TiO2-SiO2 film was composed of smaller nanoparticles compared to pure TiO2 or TiO2-SiO2 film. The BET surface area results showed that the specific surface area of the pure TiO2, TiO2-SiO2 and Ca2+/Fe3+ co-doped TiO2-SiO2 is 118.3 m2g-1, 294.3 m2g-1 and 393.7 m2g-1, respectively. The DRS and PL spectra revealed that the Fe/Ca co-doped TiO2-SiO2 film had strong visible light adsorption and diminished electrons/holes recombination. Experimental results showed that the Fe/Ca co-doped TiO2-SiO2 film is effective in the degradation of OTC under both UV and visible light irradiation.

  18. Thermal evolution of CaO-doped HfO{sub 2} films and powders

    Energy Technology Data Exchange (ETDEWEB)

    Barolin, S A; Sanctis, O A de [Lab. Materiales Ceramicos, FCEIyA, Universidad Nacional de Rosario, IFIR-CONICET (Argentina); Caracoche, M C; Martinez, J A; Taylor, M A; Pasquevich, A F [Departamento de Fisica, FCE, Universidad Nacional de La Plata, IFLP-CONICET (Argentina); Rivas, P C, E-mail: oski@fceia.unr.edu.a [Facultad de Ciencias Agronomicas y Forestales, Universidad Nacional de La Plata, IFLP (Argentina)

    2009-05-01

    Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SOFC because both are oxygen-ion conductors. The main challenge for these compounds is to reduce the relatively high value of the activation energies vacancies diffusion, which is influenced by several factors. In this work the thermal evolution of CaO-HfO{sub 2} materials have been investigated. (CaO)y-Hf(1-y)O(2-y) (y = 0.06, 0.14 y 0.2) coatings and powders were synthesized by chemical solution deposition (CSD). Films were deposited onto alumina substrates by Dip Coating technique, the burning of organic waste was carried out at 500 deg. C under normal atmosphere and then the films were thermally treated at intervals of temperature rising to a maximum temperature of 1250 deg. C. By means Glazing Incidence X-ray Diffraction (rho-2theta configuration) the phases were studied in the annealed films. On the other hand, the thermal evolution and crystallization process of powders were analyzed in-situ by HT-XRD. The phenomena crystallization occurred in films and powders were analyzed. The activation energies of diffusion of oxygen vacancies of HfO2-14 mole% CaO and HfO2-20 mole% CaO films were measured from the thermal evolution of the relaxation constant measured by Perturbed Angular Correlation Technique.

  19. Photocatalytic activity of tin-doped TiO{sub 2} film deposited via aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chua, Chin Sheng, E-mail: cschua@simtech.a-star.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Tan, Ooi Kiang; Tse, Man Siu [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Ding, Xingzhao [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore)

    2013-10-01

    Tin-doped TiO{sub 2} films are deposited via aerosol assisted chemical vapor deposition using a precursor mixture composing of titanium tetraisopropoxide and tetrabutyl tin. The amount of tin doping in the deposited films is controlled by the volume % concentration ratio of tetrabutyl tin over titanium tetraisopropoxide in the mixed precursor solution. X-ray diffraction analysis results reveal that the as-deposited films are composed of pure anatase TiO{sub 2} phase. Red-shift in the absorbance spectra is observed attributed to the introduction of Sn{sup 4+} band states below the conduction band of TiO{sub 2}. The effect of tin doping on the photocatalytic property of TiO{sub 2} films is studied through the degradation of stearic acid under UV light illumination. It is found that there is a 10% enhancement on the degradation rate of stearic acid for the film with 3.8% tin doping in comparison with pure TiO{sub 2} film. This improvement of photocatalytic performance with tin incorporation could be ascribed to the reduction of electron-hole recombination rate through charge separation and an increased amount of OH radicals which are crucial for the degradation of stearic acid. Further increase in tin doping results in the formation of recombination site and large anatase grains, which leads to a decrease in the degradation rate. - Highlights: ► Deposition of tin-doped TiO{sub 2} film via aerosol assisted chemical vapor deposition ► Deposited anatase films show red-shifted in UV–vis spectrum with tin-dopants. ► Photoactivity improves at low tin concentration but reduces at higher concentration. ► Improvement in photoactivity due to bandgap narrowing from Sn{sup 4+} band states ► Maximum photoactivity achieved occurs for films with 3.8% tin doping.

  20. Enhancement of critical current density of YBa2Cu3O7-δ thin films by nanoscale CeO2 pretreatment of substrate surfaces

    International Nuclear Information System (INIS)

    Cui, X.M.; Liu, G.Q.; Wang, J.; Huang, Z.C.; Zhao, Y.T.; Tao, B.W.; Li, Y.R.

    2007-01-01

    YBa 2 Cu 3 O 7-δ (YBCO) films were prepared on single-crystal SrTiO 3 substrates with metal-organic deposition using trifluoroacetates (TFA-MOD). Positive results have been acquired in controlled study to investigate the effects of substrate surface modification on the growth-induced flux-pinning nanostructures in YBCO films. Nanoscale CeO 2 particles were applied to single-crystal SrTiO 3 substrate surfaces using pulsed laser deposition before YBCO precursors coating. Superconducting properties of the YBCO films grown on the controlled CeO 2 -modified substrates have shown substantial improvement in the critical current densities (J c ) at 77 K over those grown on untreated substrates in almost all the field (78% increment at 1 T, 77 K). We think the reason is that the CeO 2 nanoparticles act as pinning centers

  1. Increased photocatalytic activity induced by TiO2/Pt/SnO2 heterostructured films

    Science.gov (United States)

    Testoni, Glaucio O.; Amoresi, Rafael A. C.; Lustosa, Glauco M. M. M.; Costa, João P. C.; Nogueira, Marcelo V.; Ruiz, Miguel; Zaghete, Maria A.; Perazolli, Leinig A.

    2018-02-01

    In this work, a high photocatalytic activity was attained by intercalating a Pt layer between SnO2 and TiO2 semiconductors, which yielded a TiO2/Pt/SnO2 - type heterostructure used in the discoloration of blue methylene (MB) solution. The porous films and platinum layer were obtained by electrophoretic deposition and DC Sputtering, respectively, and were both characterized morphologically and structurally by FE-SEM and XRD. The films with the Pt interlayer were evaluated by photocatalytic activity through exposure to UV light. An increase in efficiency of 22% was obtained for these films compared to those without platinum deposition. Studies on the reutilization of the films pointed out high efficiency and recovery of the photocatalyst, rendering the methodology favorable for the construction of fixed bed photocatalytic reactors. A proposal associated with the mechanism is discussed in this work in terms of the difference in Schottky barrier between the semiconductors and the electrons transfer and trapping cycle. These are fundamental factors for boosting photocatalytic efficiency.

  2. TiO 2 Thin Films Prepared via Adsorptive Self-Assembly for Self-Cleaning Applications

    KAUST Repository

    Xi, Baojuan

    2012-02-22

    Low-cost controllable solution-based processes for preparation of titanium oxide (TiO 2) thin films are highly desirable, because of many important applications of this oxide in catalytic decomposition of volatile organic compounds, advanced oxidation processes for wastewater and bactericidal treatments, self-cleaning window glass for green intelligent buildings, dye-sensitized solar cells, solid-state semiconductor metal-oxide solar cells, self-cleaning glass for photovoltaic devices, and general heterogeneous photocatalysis for fine chemicals etc. In this work, we develop a solution-based adsorptive self-assembly approach to fabricate anatase TiO 2 thin films on different glass substrates such as simple plane glass and patterned glass at variable compositions (normal soda lime glass or solar-grade borofloat glass). By tuning the number of process cycles (i.e., adsorption-then-heating) of TiO 2 colloidal suspension, we could facilely prepare large-area TiO 2 films at a desired thickness and with uniform crystallite morphology. Moreover, our as-prepared nanostructured TiO 2 thin films on glass substrates do not cause deterioration in optical transmission of glass; instead, they improve optical performance of commercial solar cells over a wide range of incident angles of light. Our as-prepared anatase TiO 2 thin films also display superhydrophilicity and excellent photocatalytic activity for self-cleaning application. For example, our investigation of photocatalytic degradation of methyl orange indicates that these thin films are indeed highly effective, in comparison to other commercial TiO 2 thin films under identical testing conditions. © 2012 American Chemical Society.

  3. Superhydrophilicity of TiO2 nano thin films

    International Nuclear Information System (INIS)

    Mohammadizadeh, M.R.; Ashkarran, A.A.

    2007-01-01

    Full text: Among the several oxide semiconductors, titanium dioxide has a more helpful role in our environmental purification due to its photocatalytic activity, photo-induced superhydrophilicity, and as a result of them non-toxicity, self cleaning, and antifogging effects. After the discovery of superhydrophilicity of titanium dioxide in 1997, several researches have been performed due to its nature and useful applications. The superhydrophilicity property of the surface allows water to spread completely across the surface rather than remains as droplets, thus making the surface antifog and easy-to-clean. The distinction of photo-induced catalytic and hydrophilicity properties of TiO 2 thin films has been accepted although, the origin of hydrophilicity property has not been recognized completely yet. TiO 2 thin films on soda lime glass were prepared by the sol-gel method and spin coating process. The calcination temperature was changed from 100 to 550 C. XRD patterns show increasing the content of polycrystalline anatase phase with increasing the calcination temperature. The AFM results indicate granular morphology of the films, which particle size changes from 22 to 166 nm by increasing the calcination temperature. The RBS, EDX and Raman spectroscopy of the films show the ratio of Ti:O∼0.5, and diffusion of sodium ions from substrate into the layer, by increasing the calcination temperature. The UV/Vis. spectroscopy of the films indicates a red shift by increasing the calcination temperature. The contact angle meter experiment shows that superhydrophilicity of the films depends on the formation of anatase crystal structure and diffused sodium content from substrate to the layer. The best hydrophilicity property was observed at 450 C calcination temperature, where the film is converted to a superhydrophilic surface after 10 minutes under 2mW/cm 2 UV irradiation. TiO 2 thin film on Si(111), Si(100), and quartz substrates needs less time to be converted to

  4. Investigations of structural, morphological and optical properties of Cu:ZnO/TiO2/ZnO and Cu:TiO2/ZnO/TiO2 thin films prepared by spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available The aim of this research work is presented a comparison study of Cu:ZnO/TiO2/ZnO (Cu:ZTZ and Cu:TiO2/ZnO/TiO2 (Cu:TZT thin films deposited by spray pyrolysis technique on FTO substrates. After deposition, these films are annealed at 500 °C. XRD confirms the anatase phase of TiO2 and Hexagonal wurtzite phase of ZnO. SEM shows that Cu:TZT has more porous surface than Cu:ZTZ and also the root mean square (RMS roughness of Cu:TZT film is 48.96 and Cu:ZTZ film is 32.69. The calculated optical band gaps of Cu:TZT and Cu:ZTZ thin films are 2.65 eV and 2.6 eV respectively, measured by UV–Vis spectrophotometer. This work provides an environment friendly and low cost use of an abundant material for highly efficient dye sensitized solar cells (DSSCs. Keywords: Multilayer films, ZnO, TiO2, Cu

  5. Enhanced Optical and Electrical Properties of TiO{sub 2} Buffered IGZO/TiO{sub 2} Bi-Layered Films

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Hyun-Joo; Kim, Daeil [University of Ulsan, Ulsan (Korea, Republic of)

    2016-08-15

    In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO{sub 2}-deposited glass substrate to determine the effect of the thickness of a thin TiO{sub 2} buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO{sub 2} buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO{sub 2} buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO{sub 2} bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO{sub 2} bi-layered films are likely to perform better in TCO applications than IGZO single layer films.

  6. Wide bandgap engineering of (AlGa)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Guo, Qixin; Arita, Makoto

    2014-01-01

    Bandgap tunable (AlGa) 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD). The deposited films are of high transmittance as measured by spectrophotometer. The Al content in films is almost the same as that in targets. The measurement of bandgap energies by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy is proved to be valid for determining the bandgap of (AlGa) 2 O 3 films as it is in good agreement with the bandgap values from transmittance spectra. The measured bandgap of (AlGa) 2 O 3 films increases continuously with the Al content covering the whole Al content range from about 5 to 7 eV, indicating PLD is a promising growth technology for growing bandgap tunable (AlGa) 2 O 3 films.

  7. Visible-light photocatalytic activity of nitrided TiO2 thin films

    International Nuclear Information System (INIS)

    Camps, Enrique; Escobar-Alarcon, L.; Camacho-Lopez, Marco Antonio; Casados, Dora A. Solis

    2010-01-01

    TiO 2 thin films have been applied in UV-light photocatalysis. Nevertheless visible-light photocatalytic activity would make this material more attractive for applications. In this work we present results on the modification of titanium oxide (anatase) sol-gel thin films, via a nitriding process using a microwave plasma source. After the treatment in the nitrogen plasma, the nitrogen content in the TiO 2 films varied in the range from 14 up to 28 at%. The titanium oxide films and the nitrided ones were characterized by XPS, micro-Raman spectroscopy and UV-vis spectroscopy. Photocatalytic activity tests were done using a Methylene Blue dye solution, and as catalyst TiO 2 and nitrided TiO 2 films. The irradiation of films was carried out with a lamp with emission in the visible (without UV). The results showed that the nitrided TiO 2 films had photocatalytic activity, while the unnitrided films did not.

  8. Modification of physicochemical and thermal properties of starch films by incorporation of TiO2 nanoparticles.

    Science.gov (United States)

    Oleyaei, Seyed Amir; Zahedi, Younes; Ghanbarzadeh, Babak; Moayedi, Ali Akbar

    2016-08-01

    In this research, potato starch and TiO2 nanoparticles (0.5, 1 and 2wt%) films were developed. Influences of different concentrations of TiO2 on the functional properties of nanocomposite films (water-related properties, mechanical characteristics, and UV transmittance) were investigated. XRD, FTIR, and DSC analyses were used to characterize the morphology and thermal properties of the films. The results revealed that TiO2 nanoparticles dramatically decreased the values of water-related properties (water vapor permeability: 11-34%; water solubility: 1.88-9.26%; moisture uptake: 2.15-11.18%). Incorporation of TiO2 led to a slight increment of contact angle and tensile strength, and a decrease in elongation at break of the films. TiO2 successfully blocked more than 90% of UV light, while opacity and white index of the films were enhanced. Glass transition temperature and melting point of the films were positively affected by the addition of TiO2 nanoparticles. The result of XRD study exhibited that due to a limited agglomeration of TiO2 nanoparticles, the mean crystal size of TiO2 increased. Formation of new hydrogen bonds between the hydroxyl groups of starch and nanoparticles was confirmed by FTIR spectroscopy. In conclusion, TiO2 nanoparticles improved the functional properties of potato starch film and extended the potential for food packaging applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. Reflection Enhancement Using TiO2/SiO2 Bilayer Films Prepared by Cost-Effective Sol-gel Method

    Directory of Open Access Journals (Sweden)

    R. Ajay Kumar

    2017-04-01

    Full Text Available Multilayer dielectric thin film structure has been demanded for its application in optoelectronic devices such as optical waveguides, vertical cavity surface-emitting devices, biosensors etc. In this paper, we present the fabrication and characterization of bilayer thin films of TiO2/SiO2 using sol-gel spin coating method. Ellipsometer measurement showed refractive index values 1.46, 2.1 corresponding to the SiO2 and TiO2 films respectively. The FTIR transmittance peaks observed at ~970 cm-1, ~1100 cm-1 and ~1400 cm-1 are attributed to the Ti-O-Si, Si-O-Si and Ti-O-Ti bonds respectively. Maximum reflectance is observed from two bilayer film structure which can be further optimized to get the high reflection to a broad wavelength range.

  10. TiO{sub 2} and TiO{sub 2}-SiO{sub 2} thin films and powders by one-step soft-solution method: Synthesis and characterizations

    Energy Technology Data Exchange (ETDEWEB)

    Ennaoui, A.; Sankapal, B.R.; Skryshevsky, V.; Lux-Steiner, M.Ch. [Division Solar Energy Research, Department Heterogeneous Material Systems, Hahn-Meitner-Institut, Glienicker Strasse 100, 14109 Berlin (Germany)

    2006-06-15

    Simple soft-solution method has been developed to synthesize films and powders of TiO{sub 2} and mixed TiO{sub 2}-SiO{sub 2} at relatively low temperatures. This method is simple and inexpensive. Furthermore, reactor can be designed for large-scale applications as well as to produce large quantities of composite powders in a single step. For the preparation of TiO{sub 2}, we used aqueous acidic medium containing TiOSO{sub 4} and H{sub 2}O{sub 2}, which results in a peroxo-titanium precursor while colloidal SiO{sub 2} has been added to the precursor for the formation of TiO{sub 2}-SiO{sub 2}. Post annealing at 500{sup o}C is necessary to have anatase structure. Resulting films and powders were characterized by different techniques. TiO{sub 2} (anatase) phase with (101) preferred orientation has been obtained. Also in TiO{sub 2}-SiO{sub 2} mixed films and powders, TiO{sub 2} (anatase) phase was found. Fourier transform infrared spectroscopy (FTIR) results for TiO{sub 2} and mixed TiO{sub 2}-SiO{sub 2} films have been presented and discussed. The method developed in this paper allowed obtaining compact and homogeneous TiO{sub 2} films. These compact films are highly photoactive when TiO{sub 2} is used as photo anode in an photoelectrochemical cell. Nanoporous morphology is obtained when SiO{sub 2} colloids are added into the solution. (author)

  11. Preparation and Properties of Nano Dy/TiO2 Films Supported on High Silica Fiber

    Directory of Open Access Journals (Sweden)

    HUANG Feng-ping

    2017-07-01

    Full Text Available In order to improve the photocatalytic degradation performance and stability of nano TiO2, Dy doped TiO2 supported on high silica glass fiber was prepared by microwave-sol method combined with dip-coating method. The samples were analyzed by XRD,SEM,PL,EDS,XPS and other equipments for phase composition of films,surface topography, surface elements and the stability of films. And the effects of pretreatment solution and coating method on the high-silica fiber film were investigated.In addition, the photocatalytic performance of the sample has been investigated by degrading methylene blue. The results show that the catalytic stability of Dy doping TiO2 nanofilms supported on high silica glass fiber can be improved and the degradation of methyl orange can reach 94% in 30min after 5 times of coating treatment.

  12. Surface characterization of poly(methylmethacrylate) based nanocomposite thin films containing Al{sub 2}O{sub 3} and TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lewis, S., E-mail: Scott.Lewis@Manchester.ac.u [School of Physics and Astronomy, Radio Astronomy Technology Group, University of Manchester, Turing Building, Oxford Rd, Manchester, M13 9PL (United Kingdom); Haynes, V. [School of Physics and Astronomy, Radio Astronomy Technology Group, University of Manchester, Turing Building, Oxford Rd, Manchester, M13 9PL (United Kingdom); Wheeler-Jones, R. [Institute of Advanced Materials and Energy Systems, Cardiff School of Engineering, Queen' s Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Sly, J. [School of Electrical and Electronic Engineering, Microelectronics and Nanostructures group, The University of Manchester, Sackville St Building, Sackville St, Manchester, M60 1QD (United Kingdom); Perks, R.M. [Institute of Advanced Materials and Energy Systems, Cardiff School of Engineering, Queen' s Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Piccirillo, L. [School of Physics and Astronomy, Radio Astronomy Technology Group, University of Manchester, Turing Building, Oxford Rd, Manchester, M13 9PL (United Kingdom)

    2010-03-01

    Poly(methylmethacrylate) (PMMA) based nanocomposite electron beam resists have been demonstrated by spin coating techniques. When TiO{sub 2} and Al{sub 2}O{sub 3} nanoparticles were directly dispersed into the PMMA polymer matrix, the resulting nanocomposites produced poor quality films with surface roughnesses of 322 and 402 nm respectively. To improve the surface of the resists, the oxide nanoparticles were encapsulated in toluene and methanol. Using the zeta potential parameter, it was found that the stabilities of the toluene/oxide nanoparticle suspensions were 7.7 mV and 19.4 mV respectively, meaning that the suspension was not stable. However, when the TiO{sub 2} and Al{sub 2}O{sub 3} nanoparticles were encapsulated in methanol the zeta potential parameter was 31.9 mV and 39.2 mV respectively. Therefore, the nanoparticle suspension was stable. This method improved the surface roughness of PMMA based nanocomposite thin films by a factor of 6.6 and 6.4, when TiO{sub 2} and Al{sub 2}O{sub 3} were suspended in methanol before being dispersed into the PMMA polymer.

  13. Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

    International Nuclear Information System (INIS)

    Herrero, J.; Guillen, C.

    2004-01-01

    The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

  14. Formulation and Characterization of Cr2O3 Doped ZnO Thick Films as H2S Gas Sensor

    Directory of Open Access Journals (Sweden)

    A. V. PATIL

    2009-09-01

    Full Text Available Cr2O3 doped ZnO thick films have been prepared by screen printing technique and firing process. These films were characterized by X-ray diffraction (XRD, Scanning electron microscopy (SEM, and EDX. H2S gas sensing properties of these films were investigated at different operating temperatures and different H2S concentrations. The 7 wt. % Cr2O3 doped ZnO thick films exhibits excellent H2S gas sensing properties with maximum sensitivity of 99.12 % at 300 oC in air atmosphere with fast response and recovery time.

  15. The Effects of SiO2 Nanoparticles on Mechanical and Physicochemical Properties of Potato Starch Films

    Directory of Open Access Journals (Sweden)

    Z. Torabi

    2013-06-01

    Full Text Available In this paper effect of SiO2 nanoparticles was investigated on potato starch films. Potato starch films were prepared by casting method with addition of nano-silicon dioxide and a mixture of sorbitol/glycerol (weight ratio of 3 to 1 as plasticizers. SiO2 nanoparticles incorporated to the potato starch films at different concentrations 0, 1, 2, 3, and 5% of total solid, and the films were dried under controlled conditions.  Physicochemical properties such as water absorption capacity (WAC, water vapor permeability (WVP and mechanical properties of the films were measured. Results show that by increasing the concentration of silicon dioxide nanoparticles, mechanical properties of films can be improved. Also incorporation of silicon dioxide nanoparticles in the structure of biopolymer decrease permeability of the gaseous molecules such as water vapor. In summary, addition of silicon dioxide nanoparticles improves functional properties of potato starch films and these bio Nano composites can be used in food packaging.

  16. Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

    Science.gov (United States)

    Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

    2018-04-01

    Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

  17. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    International Nuclear Information System (INIS)

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  18. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  19. Synthesis of TiO2-doped SiO2 composite films and its applications

    Indian Academy of Sciences (India)

    Wintec

    structure of the titanium oxide species in the TiO2-doped SiO2 composite films and the photocatalytic reactiv- ity in order to ... gaku D-max γA diffractometer with graphite mono- chromized ... FT–IR absorption spectra of TiO2-doped SiO2 com-.

  20. Structural and electrical characteristics of ZrO2-TiO2 thin films by sol-gel method

    International Nuclear Information System (INIS)

    Hsu, Cheng-Hsing; Tseng, Ching-Fang; Lai, Chun-Hung; Tung, Hsin-Han; Lin, Shih-Yao

    2010-01-01

    In this paper, we investigated electrical properties and microstructures of ZrTiO 4 (ZrO 2 -TiO 2 ) thin films prepared by the sol-gel method on ITO substrates at different annealing temperatures. All films exhibited ZrTiO 4 (1 1 1) and (1 0 1) orientations perpendicular to the substrate surface, and the grain size increased with increase in the annealing temperature. A low leakage current density of 2.06 x 10 -6 A/cm 2 was obtained for the prepared films. Considering the primary memory switching behavior of ZrTiO 4 , ReRAM based on ZrTiO 4 shows promise for future nonvolatile memory applications.

  1. Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

    Science.gov (United States)

    Lee, Yueh-Lin; Chuang, Jia-Hao; Huang, Tzu-Hsuan; Ho, Chong-Long; Wu, Meng-Chyi

    2013-03-01

    Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

  2. Mechanical properties of Al{sub 2}O{sub 3}-doped (2 wt.%) ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Kuriki, Shina [Core Technology Development Group, Core Component Business Unit, Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)], E-mail: Shina.Kuriki@jp.sony.com; Kawashima, Toshitaka [Core Technology Development Group, Core Component Business Unit, Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)], E-mail: Toshitaka.Kawashima@jp.sony.com

    2007-10-15

    We report a new method of evaluating the adhesion of Al{sub 2}O{sub 3}-doped (2 wt.%) ZnO (AZO) thin films. The AZO films were deposited by DC reactive magnetron sputtering on plastic film (PET: polyethyleneterephthalate) at various sputtering pressures, power, and reactive gas-flow ratios. The adhesion test of the films was carried out using the nanoindentation system. The fracture point as determined by the load-displacement curve occurred at the time of separation between the thin film and the substrate. The integration value of load and displacement to the fracture point is defined as the degree of adhesion (S{sub W}). The AZO films showed that adhesion increase as sputtering power increases and sputtering pressure decreases.

  3. Influence of Different Substrates on Laser Induced Damage Thresholds at 1064 nm of Ta2O5 Films

    International Nuclear Information System (INIS)

    Cheng, Xu; Jian-Yong, Ma; Yun-Xia, Jin; Hong-Bo, He; Jian-Da, Shao; Zheng-Xiu, Fan

    2008-01-01

    Ta 2 O 5 films are prepared on Si, BK7, fused silica, antireflection (AR) and high reflector (HR) substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds (LIDTs) at 1064 nm of Ta 2 O 5 films on different substrates are investigated before and after annealing at 673K for 12 h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta 2 O 5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta 2 O 5 films are mainly correlated with three parameters: substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed

  4. Photogeneration of H2O2 in Water-Swollen SPEEK/PVA Polymer Films.

    Science.gov (United States)

    Lockhart, PaviElle; Little, Brian K; Slaten, B L; Mills, G

    2016-06-09

    Efficient reduction of O2 took place via illumination with 350 nm photons of cross-linked films containing a blend of sulfonated poly(ether etherketone) and poly(vinyl alcohol) in contact with air-saturated aqueous solutions. Swelling of the solid macromolecular matrices in H2O enabled O2 diffusion into the films and also continuous extraction of the photogenerated H2O2, which was the basis for a method that allowed quantification of the product. Peroxide formed with similar efficiencies in films containing sulfonated polyketones prepared from different precursors and the initial photochemical process was found to be the rate-determining step. Generation of H2O2 was most proficient in the range of 4.9 ≤ pH ≤ 8 with a quantum yield of 0.2, which was 10 times higher than the efficiencies determined for solutions of the polymer blend. Increases in temperature as well as [O2] in solution were factors that enhanced the H2O2 generation. H2O2 quantum yields as high as 0.6 were achieved in H2O/CH3CN mixtures with low water concentrations, but peroxide no longer formed when film swelling was suppressed. A mechanism involving reduction of O2 by photogenerated α-hydroxy radicals from the polyketone in competition with second-order radical decay processes explains the kinetic features. Higher yields result from the films because cross-links present in them hinder diffusion of the radicals, limiting their decay and enhancing the oxygen reduction pathway.

  5. Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

    Directory of Open Access Journals (Sweden)

    Suvarna R. Bathe

    2014-01-01

    Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

  6. Photoelectrochemical Properties of FeO Supported on TiO2-Based Thin Films Converted from Self-Assembled Hydrogen Titanate Nanotube Powders

    Directory of Open Access Journals (Sweden)

    Kyung-Jong Noh

    2012-01-01

    Full Text Available A photoanode was fabricated using hematite (α-Fe2O3 nanoparticles which had been held in a thin film of hydrogen titanate nanotubes (H-TiNT, synthesized by repetitive self-assembling method on FTO (fluorine-doped tin oxide glass, which were incorporated via dipping process in aqueous Fe(NO33 solution. Current voltage (I-V electrochemical properties of the photoanode heat-treated at 500°C for 10 min in air were evaluated under ultraviolet-visible light irradiation. Microstructure and crystallinity changes were also investigated. The prepared Fe2O3/H-TiNT/FTO composite thin film exhibited about threefold as much photocurrent as the Fe2O3/FTO film. The improvement in photocurrent was considered to be caused by reduced recombination of electrons and holes, with an appropriate amount of Fe2O3 spherical nanoparticles supported on the H-TiNT/FTO film. Nanosized spherical Fe2O3 particles with about 65 wt% on the H-TiNT/FTO film showed best performance in our study.

  7. Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery

    International Nuclear Information System (INIS)

    Kim, Han-Ki; Yoon, Young Soo

    2004-01-01

    We report on the fabrication of a LiCoO 2 film for an all-solid-state thin film microbattery by using a rapid-thermal-annealing (RTA) process. The LiCoO 2 films were grown by rf magnetron sputtering using a synthesized LiCoO 2 target in a [O 2 /(Ar+O 2 )] ratio of 10%. Scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) analysis results showed that the surface layer on the as-deposited LiCoO 2 film was completely removed by rapid thermal annealing process in oxygen ambient for 20 min. In addition, the thin film microbattery fabricated with the annealed LiCoO 2 film shows fairly stable cyclability with a specific discharge capacity of 56.49 μAh/cm2 μm. These results show the possibility of the RTA LiCoO 2 film and rapid thermal annealing process being a promising cathode material and annealing process for thin film microbatteries, respectively

  8. Observation of red electroluminescence from an Eu2O3/ p +-Si device and improved performance by introducing a Tb2O3 layer

    International Nuclear Information System (INIS)

    Yin, Xue; Wang, Shenwei; Mu, Guangyao; Wan, Guangmiao; Huang, Miaoling; Yi, Lixin

    2017-01-01

    We report red electroluminescence (EL) from an Eu 2 O 3 / p + -Si device with Eu 2 O 3 film annealed in oxygen ambient at 700 °C. The red EL is ascribed to the characteristic emissions of Eu 3+ ions in Eu 2 O 3 film and the luminescence mechanism is discussed in detail. In order to optimize the device performance, Eu 2 O 3 /Tb 2 O 3 multiple films were deposited on Si wafer, and the result showed EL intensity of the device was obviously enhanced and the turn-on voltage was reduced to about 10 V. Moreover, intensity ratio I ( 5 D 0 – 7 F 2 )/ I ( 5 D 0 – 7 F 1 ) was also significantly increased with the hypersensitive transition 5 D 0 – 7 F 2 as the most prominent group at about 611 nm. The improved performance was attributed to the added Tb 2 O 3 film that it can be served as the hole-injection layer to afford extra holes injected into the Eu 2 O 3 layer. (paper)

  9. Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

    Science.gov (United States)

    Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

    2017-10-01

    The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

  10. Thin RuO2 conducting films grown by MOCVD for microelectronic applications

    International Nuclear Information System (INIS)

    Froehlich, K.; Cambel, V.; Machajdik, D.; Pignard, S.; Baumann, P. K.; Lindner, J.; Schumacher, M.

    2002-01-01

    We have prepared thin RuO 2 films by MOCVD using thermal evaporation of Ru(thd) 2 (cod) solid precursor. The films were prepared at deposition temperatures between 250 and 500 grad C on silicon and sapphire substrates. Different structure was observed for the RuO 2 films on these substrates; the films on Si substrate were polycrystalline, while X-ray diffraction analysis revealed epitaxial growth of RuO 2 on sapphire substrates. Polycrystalline RuO 2 films prepared at temperatures below 300 grad C on Si substrate exhibit smooth surface and excellent step coverage. Highly conformal growth of the RuO 2 films at low temperature and low pressure results in nearly 100% step coverage for sub-mm features with 1:1 aspect ratio. Resistivity of the polycrystalline RuO 2 at room temperature ranged between 100 and 200 μ x Ω x cm. These films are suitable for CMOS and RAM applications. (Authors)

  11. Structural Modification of Sol-Gel Synthesized V2O5 and TiO2 Thin Films with/without Erbium Doping

    Directory of Open Access Journals (Sweden)

    Fatma Pınar Gökdemir

    2014-01-01

    Full Text Available Comparative work of with/without erbium- (Er- doped vanadium pentoxide (V2O5 and titanium dioxide (TiO2 thin films were carried out via sol-gel technique by dissolving erbium (III nitrate pentahydrate (Er(NO33·5H2O in vanadium (V oxoisopropoxide (OV[OCH(CH32]3 and titanium (IV isopropoxide (Ti[OCH(CH32]4. Effect of Er doping was traced by Fourier transform IR (FTIR, thermogravimetric/differential thermal (TG/DTA, and photoluminescence measurements. UV-Vis transmission/absorption measurement indicated a blue shift upon Er doping in V2O5 film due to the softening of V=O bond while appearance of typical absorption peaks in Er-doped TiO2 film. Granule size of the films increased (reduced upon Er substitution on host material compared to undoped V2O5 and TiO2 films, respectively.

  12. Surface study and thickness control of thin Al2O3 film on Cu-9%Al(111) single crystal

    International Nuclear Information System (INIS)

    Yamauchi, Yasuhiro; Yoshitake, Michiko; Song Weijie

    2004-01-01

    We were successful in growing a uniform flat Al 2 O 3 film on the Cu-9%Al(111) surface using the improved cleaning process, low ion energy and short time sputtering. The growth of ultra-thin film of Al 2 O 3 on Cu-9%Al was investigated using Auger electron spectroscopy (AES) and a scanning electron microscope (SEM). The Al 2 O 3 film whose maximum thickness was about 4.0 nm grew uniformly on the Cu-9%Al surface. The Al and O KLL Auger peaks of Al 2 O 3 film shifted toward low kinetic energy, and the shifts were related to Schottky barrier formation and band bending at the Al 2 O 3 /Cu-9%Al interface. The thickness of Al 2 O 3 film on the Cu-9%Al surface was controlled by the oxygen exposure

  13. Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

    Science.gov (United States)

    Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

    2017-11-01

    In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

  14. Photocatalytic sterilization of TiO2 films coated on Al fiber

    International Nuclear Information System (INIS)

    Luo Li; Miao Lei; Tanemura, Sakae; Tanemura, Masaki

    2008-01-01

    Photocatalytic TiO 2 films were coated on Al fiber by sol-gel dip-coating method, and then annealed. The crystal structure and morphology of the films were performed by XRD, TEM and SEM. Photocatalytic sterilization of the films was investigated in O 2 atmosphere through purifying the aqueous solution with facultative aerobe (Bacillus cereus), aerobe (Pseudomonas aeruginosa) and anaerobe (Staphylococcus aureus, Enterococcus faecalis and Escherichia coli). In the presence of O 2 , it benefits to generate O 2 · - and ·OH at the first stage of the photocatalytic reaction, while the excess O 2 restrains the anaerobe from reproducing and accelerates the reproducing for the aerobe at the second stage of reaction. As a result, it was found that the crystal of TiO 2 films is anatase phase and the films have excellent sterilization effect against facultative aerobe and anaerobe. Nevertheless, it only decreased the bioactivity against aerobe in a short time

  15. Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions

    Science.gov (United States)

    Na, So-Yeong; Kim, Yeo-Myeong; Yoon, Da-Jeong; Yoon, Sung-Min

    2017-12-01

    The effects of atomic layer deposition (ALD) conditions for the HfO2 gate insulators (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature and Hf precursor purge time were varied to 200, 225, and 250 °C, and 15 and 30 s, respectively. The HfO2 thin films showed low leakage current density of 10-8 A cm-2, high dielectric constant of over 20, and smooth surface roughness at all ALD conditions. The IGZO TFTs using the HfO2 GIs showed good device characteristics such as a saturation mobility as high as 11 cm2 V-1 s-1, a subthreshold swing as low as 0.10 V/dec, and all the devices could be operated at a gate voltage as low as  ±3 V. While there were no marked differences in transfer characteristics and PBS stabilities among the fabricated devices, the NBIS instabilities could be improved by increasing the ALD temperature for the formation of HfO2 GIs by reducing the oxygen vacancies within the IGZO channel.

  16. Photocatalytic properties of nanocrystalline TiO2 thin film with Ag additions

    International Nuclear Information System (INIS)

    Chang, C.-C.; Lin, C.-K.; Chan, C.-C.; Hsu, C.-S.; Chen, C.-Y.

    2006-01-01

    In the present study, nanocrystalline TiO 2 /Ag composite thin films were prepared by a sol-gel spin coating technique. While, by introducing polystyrene (PS) microspheres, porous TiO 2 /Ag films were obtained after calcining at a temperature of 500 o C. The as-prepared TiO 2 and TiO 2 /Ag thin films were characterized by X-ray diffractometry, and scanning electron microscopy to reveal the structural and morphological differences. In addition, the photocatalytic properties of these films were investigated by degrading methylene blue under UV irradiation. After 500 o C calcination, the microstructure of PS-TiO 2 film without Ag addition exhibited a sponge-like microstructure while significant sintering effect was noticed with Ag additions and the films exhibited a porous microstructure. Meanwhile, coalescence of nanocrystalline anatase-phase TiO 2 can be observed with respect to the sharpening of XRD diffraction peaks. The photodegradation of porous TiO 2 doped with 1 mol% Ag exhibited the best photocatalytic efficiency where 72% methylene blue can be decomposed after UV exposure for 12 h

  17. Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

    Science.gov (United States)

    Liau, Leo Chau-Kuang; Lin, Yun-Guo

    2015-01-01

    Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

  18. Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

    Science.gov (United States)

    Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

    2018-04-01

    Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

  19. Microstructural comparison of Yba2Cu3O7-x thin films laser deposited in O2 and O2/Ar ambient

    DEFF Research Database (Denmark)

    Verbist, K.; Kyhle, Anders; Vasiliev, A.L.

    1996-01-01

    The use of a diluted O-2/Ar atmosphere-for laser deposition of YBa2Cu3O7-x thin films results in a strong decrease of the surface outgrowth density as compared to deposition in pure O-2. The smoother films need a longer oxygenation period and show slightly lower critical current densities; though...... still in excess of 10(6) A cm(-2) at 77 K. Electron microscopy revealed that the outgrowths mainly consist of a large copper-oxide grain connected to Y2O3 grains. Y2O3 nano-scale inclusions are present irrespective of the deposition atmosphere, however at remarkably low densities compared to other...... literature data. We find that the twin plane density is lower and the twin structure more homogeneous in the case of films deposited in a mixture of O-2/Ar. This we ascribe to the absence of surface outgrowths which seem to block regular twin structure formation. Possibly the differences in necessary post...

  20. Photocathodic Protection of 304 Stainless Steel by Bi2S3/TiO2 Nanotube Films Under Visible Light.

    Science.gov (United States)

    Li, Hong; Wang, Xiutong; Wei, Qinyi; Hou, Baorong

    2017-12-01

    We report the preparation of TiO 2 nanotubes coupled with a narrow bandgap semiconductor, i.e., Bi 2 S 3 , to improve the photocathodic protection property of TiO 2 for metals under visible light. Bi 2 S 3 /TiO 2 nanotube films were successfully synthesized using the successive ionic layer adsorption and reaction (SILAR) method. The morphology and structure of the composite films were studied by scanning electron microscopy and X-ray diffraction, respectively. UV-visible diffuse reflectance spectra were recorded to analyze the optical absorption property of the composite films. In addition, the influence of Bi 2 S 3 deposition cycles on the photoelectrochemical and photocathodic protection properties of the composite films was also studied. Results revealed that the heterostructure comprised crystalline anatase TiO 2 and orthorhombic Bi 2 S 3 and exhibited a high visible light response. The photocurrent density of Bi 2 S 3 /TiO 2 was significantly higher than that of pure TiO 2 under visible light. The sensitization of Bi 2 S 3 enhanced the separation efficiency of the photogenerated charges and photocathodic protection properties of TiO 2 . The Bi 2 S 3 /TiO 2 nanotubes prepared by SILAR deposition with 20 cycles exhibited the optimal photogenerated cathodic protection performance on the 304 stainless steel under visible light.

  1. Photocathodic Protection of 304 Stainless Steel by Bi2S3/TiO2 Nanotube Films Under Visible Light

    Science.gov (United States)

    Li, Hong; Wang, Xiutong; Wei, Qinyi; Hou, Baorong

    2017-01-01

    We report the preparation of TiO2 nanotubes coupled with a narrow bandgap semiconductor, i.e., Bi2S3, to improve the photocathodic protection property of TiO2 for metals under visible light. Bi2S3/TiO2 nanotube films were successfully synthesized using the successive ionic layer adsorption and reaction (SILAR) method. The morphology and structure of the composite films were studied by scanning electron microscopy and X-ray diffraction, respectively. UV-visible diffuse reflectance spectra were recorded to analyze the optical absorption property of the composite films. In addition, the influence of Bi2S3 deposition cycles on the photoelectrochemical and photocathodic protection properties of the composite films was also studied. Results revealed that the heterostructure comprised crystalline anatase TiO2 and orthorhombic Bi2S3 and exhibited a high visible light response. The photocurrent density of Bi2S3/TiO2 was significantly higher than that of pure TiO2 under visible light. The sensitization of Bi2S3 enhanced the separation efficiency of the photogenerated charges and photocathodic protection properties of TiO2. The Bi2S3/TiO2 nanotubes prepared by SILAR deposition with 20 cycles exhibited the optimal photogenerated cathodic protection performance on the 304 stainless steel under visible light.

  2. Roles of texture of Zr alloys in ZrO{sub 2} film formation and δ-hydride orientation near ZrO{sub 2}/Zr interface

    Energy Technology Data Exchange (ETDEWEB)

    Qin, W.; Szpunar, J.A., E-mail: weq565@mail.usask.ca, E-mail: jerzy.szpunar@usask.ca [Univ. of Saskatchewan, Dept. of Mechanical Engineering, Saskatoon, SK (Canada); Kozinski, J., E-mail: janusz.kozinski@lassonde.yorku.ca [York Univ., Faculty of Science and Engineering, Toronto, ON (Canada)

    2014-07-01

    Oxidation and hydrogen embrittlement are related to formation of cracks and failure of Zr alloys used in nuclear reactor applications. An in-depth understanding of the formation of ZrO{sub 2} film and the hydride precipitation and orientation is important for improving the corrosion resistance of zirconium alloys. In this work a theoretical model is developed to analyze the microstructure of ZrO{sub 2} film formed on Zr alloys and the effect of stress that results from ZrO{sub 2} formation on hydride reorientation in the region near oxide/metal interface. Our work shows that the macroscopic stress produced due to Pilling-Bedworth ratio for ZrO{sub 2}/Zr could lead to the hydride re-orientation in the region near ZrO{sub 2}/Zr interface. Whether or not this effect can occur is dependent on the texture of the zirconium alloys. Control of texture of zirconium alloys can affect the microstructure of ZrO{sub 2} film and can be responsible for change of hydride orientation. (author)

  3. Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

    International Nuclear Information System (INIS)

    Koida, Takashi; Sai, Hitoshi; Kondo, Michio

    2010-01-01

    Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

  4. Characteristics of RuO2-SnO2 nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors

    International Nuclear Information System (INIS)

    Kim, Han-Ki; Choi, Sun-Hee; Yoon, Young Soo; Chang, Sung-Yong; Ok, Young-Woo; Seong, Tae-Yeon

    2005-01-01

    The characteristics of RuO 2 -SnO 2 nanocrystalline-embedded amorphous electrode, grown by DC reactive sputtering, was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), and transmission electron diffraction (TED) examination results showed that Sn and Ru metal cosputtered electrode in O 2 /Ar ambient have RuO 2 -SnO 2 nanocrystallines in an amorphous oxide matrix. It is shown that the cyclic voltammorgram (CV) result of the RuO 2 -SnO 2 nanocrystalline-embedded amorphous film in 0.5 M H 2 SO 4 liquid electrolyte is similar to a bulk-type supercapacitor behavior with a specific capacitance of 62.2 mF/cm 2 μm. This suggests that the RuO 2 -SnO 2 nanocrystalline-embedded amorphous film can be employed in hybrid all-solid state energy storage devises as an electrode of supercapacitor

  5. Cellulose acetate-based SiO2/TiO2 hybrid microsphere composite aerogel films for water-in-oil emulsion separation

    Science.gov (United States)

    Yang, Xue; Ma, Jianjun; Ling, Jing; Li, Na; Wang, Di; Yue, Fan; Xu, Shimei

    2018-03-01

    The cellulose acetate (CA)/SiO2-TiO2 hybrid microsphere composite aerogel films were successfully fabricated via water vapor-induced phase inversion of CA solution and simultaneous hydrolysis/condensation of 3-aminopropyltrimethoxysilane (APTMS) and tetrabutyl titanate (TBT) at room temperature. Micro-nano hierarchical structure was constructed on the surface of the film. The film could separate nano-sized surfactant-stabilized water-in-oil emulsions only under gravity. The flux of the film for the emulsion separation was up to 667 L m-2 h-1, while the separation efficiency was up to 99.99 wt%. Meanwhile, the film exhibited excellent stability during multiple cycles. Moreover, the film performed excellent photo-degradation performance under UV light due to the photocatalytic ability of TiO2. Facile preparation, good separation and potential biodegradation maked the CA/SiO2-TiO2 hybrid microsphere composite aerogel films a candidate in oil/water separation application.

  6. Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

    Science.gov (United States)

    Hu, Weida; Wan, Long; Liu, Xiaopan; Li, Qiang; Wang, Zhiqi

    2011-04-01

    The diamond abrasive particles were coated with the TiO2/Al2O3 film by the sol-gel technique. Compared with the uncoated diamonds, the TiO2/Al2O3 film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO2/Al2O3 film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO2/Al2O3 film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2HRC to 66.5HRC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.

  7. Fabrication and Surface Properties of Composite Films of SAM/Pt/ZnO/SiO 2

    KAUST Repository

    Yao, Ke Xin

    2008-12-16

    Through synthetic architecture and functionalization with self-assembled monolayers (SAMs), complex nanocomposite films of SAM/Pt/ZnO/SiO2 have been facilely prepared in this work. The nanostructured films are highly uniform and porous, showing a wide range of tunable wettabilities from superhydrophilicity to superhydrophobicity (water contact angles: 0° to 170°). Our approach offers synthetic flexibility in controlling film architecture, surface topography, coating texture, crystallite size, and chemical composition of modifiers (e.g., SAMs derived from alkanethiols). For example, wettability properties of the nanocomposite films can be finely tuned with both inorganic phase (i.e., ZnO/SiO2 and Pt/ZnO/SiO2) and organic phase (i.e., SAMs on Pt/ZnO/SiO2). Due to the presence of catalytic components Pt/ZnO within the nanocomposites, surface reactions of the organic modifiers can further take place at room temperature and elevated temperatures, which provides a means for SAM formation and elimination. Because the Pt/ZnO forms an excellent pair of metal-semiconductors for photocatalysis, the anchored SAMs can also be modified or depleted by UV irradiation (i.e., the films possess self-cleaning ability). Potential applications of these nanocomposite films have been addressed. Our durability tests also confirm that the films are thermally stable and structurally robust in modification- regeneration cycles. © 2008 American Chemical Society.

  8. Combined sonochemical/CVD method for preparation of nanostructured carbon-doped TiO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Rasoulnezhad, Hossein [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Kavei, Ghassem, E-mail: kaveighassem@gmail.com [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Ahmadi, Kamran [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Rahimipour, Mohammad Reza [Ceramic Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of)

    2017-06-30

    Highlights: • Combination of sonochemical and CVD methods for preparation of nanostructured carbon-doped TiO{sub 2} thin film on glass substrate, for the first time. • High transparency, monodispersity and homogeneity of the prepared thin films. • Preparation of the carbon-doped TiO{sub 2} thin films with nanorod and nanosphere morphologies. - Abstract: The present work reports the successful synthesis of the nanostructured carbon-doped TiO{sub 2} thin films on glass substrate by combination of chemical vapor deposition (CVD) and ultrasonic methods, for the first time. In this method the ultrasound waves act as nebulizer for converting of sonochemically prepared TiO{sub 2} sol to the mist particles. These mist particles were thermally decomposed in subsequent CVD chamber at 320 °C to produce the carbon-doped TiO{sub 2} thin films. The obtained thin films were characterized by means of X-ray Diffraction (XRD), Raman spectroscopy, diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results show that the prepared thin films have anatase crystal structure and nanorod morphology, which calcination of them at 800 °C results in the conversion of nanorods to nanoparticles. In addition, the prepared samples have high transparency, monodispersity and homogeneity. The presence of the carbon element in the structure of the thin films causes the narrowing of the band-gap energy of TiO{sub 2} to about 2.8 eV, which results in the improvement of visible light absorption capabilities of the thin film.

  9. Preparation and characterization of micro-grid modified In_2O_3:W films

    International Nuclear Information System (INIS)

    Dong, Dongmei; Wang, Wenwen; Zhang, Fan; Fu, Qiang; Pan, Jiaojiao

    2016-01-01

    Tungsten doped indium oxide (In_2O_3:W, IWO) thin films with IWO micro-grid covered surface were prepared at room temperature using techniques of radio frequency (RF) magnetron sputtering and polystyrene (PS) microsphere template. The composition, crystallization structures, surface morphologies, and optical and electrical properties of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, spectrophotometer from visible to near infrared (NIR) range and Hall effect measurement, respectively. Periodic micro-grid modified surface was obtained to improve light trapping properties. The effects of the PS micro-spheres diameters and the sputtering time on the surface morphology, transmittance in NIR range, diffuse reflection and conductive properties of the IWO films are investigated. Experiments show that surface modification of the IWO film with micro-grid under the optimized condition can improve the conductivity of the films by 15%, and the diffuse reflectance by 150%, with less than 8% decrease of the transmittance in the visible region. The study would be beneficial to the light trapping effect of solar cells using IWO films as transparent electrodes. - Highlights: • In_2O_3:W (IWO) films were obtained by reactive frequency magnetron sputtering. • IWO micro-grids were prepared on the surface of IWO films. • Influences of micro-grid size and sputtering time on IWO films were analyzed. • Both high conductivity and transparency are acquired in near-infrared region.

  10. Photocatalysis and characterization of the gel-derived TiO{sub 2} and P-TiO{sub 2} transparent thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hsuan-Fu, E-mail: hfyu@mail.tku.edu.tw [Department of Chemical and Materials Engineering, Ceramic Materials Laboratory, Tamkang University, Taipei 25137, Taiwan (China); Energy and Opto-Electronic Materials Research Center, Tamkang University, Taipei 25137, Taiwan (China); Wang, Chang-Wen [Department of Chemical and Materials Engineering, Ceramic Materials Laboratory, Tamkang University, Taipei 25137, Taiwan (China)

    2011-07-29

    The gel-derived TiO{sub 2} and P-TiO{sub 2} transparent films coated on fused-SiO{sub 2} substrates were prepared using a spin-coating technique. Effects of phosphorus dopants and calcination temperature on crystal structure, crystallite size, microstructure, light transmittance and photocatalytic activity of the films were investigated. By introducing P atoms to Ti-O framework, the growth of anatase crystallites was hindered and the crystal structure of anatase-TiO{sub 2} could withstand temperature up to 900 deg. C. The photocatalytic activities of the prepared films were characterized using the characteristic time constant ({tau}) for the photocatalytic reaction. The titania film with a smaller {tau} value possesses a higher photocatalytic ability. After exposing to 365-nm UV light for 12 h, the P-TiO{sub 2} films calcined between 600 deg. C and 900 deg. C can photocatalytically decomposed {>=} 84 mol% of the methylene blue in water with corresponding {tau} {<=} 7.1 h, which were better than the pure TiO{sub 2} films prepared at the same calcination temperature.

  11. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    Science.gov (United States)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  12. Origin of room temperature ferromagnetism in SnO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jing [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Bai, Guohua; Jiang, Yinzhu [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Du, Youwei [National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Chen, E-mail: chen_wu@zju.edu.cn [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yan, Mi, E-mail: mse_yanmi@zju.edu.cn [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

    2017-03-15

    SnO{sub 2} films exhibiting room temperature ferromagnetism (RTFM) have been prepared on Si (001) by pulsed laser deposition. The saturation magnetization (M{sub s}) of the films experiences a decreasing trend followed by increasing with the growth temperature increased from RT to 400 ℃. The growth temperature affects both the concentration and the location of the oxygen vacancies as the origin of the RTFM. With lower growth temperatures (<300 ℃), more oxygen vacancies exist in the inner film for the samples with less crystallinity, resulting in enhanced magnetism. Higher deposition temperature leads to less oxygen vacancies in the inner film but more oxygen defects at the film surface, which is also beneficial to achieve greater magnetism. Various oxygen pressures during growth and post-annealing have also been used to confirm the role of oxygen vacancies. The study demonstrates that the surface oxygen defects and the positively charged monovalent O vacancies (V{sub O}{sup +}) in the inner film are the origin of the magnetism in SnO{sub 2} films. - Highlights: • SnO{sub 2} films exhibiting room temperature ferromagnetism (RTFM) have been prepared on Si (001) by pulsed laser deposition. • Growth temperature, oxygen pressure and annealing affect the growth of SnO{sub 2} films. • Both the concentration and location of the oxygen vacancies play critical roles in the magnetization.

  13. Effects of the addition of H2O and NH4OH in the electrical properties of thin films of Y2O3 deposited by pyrolytic spray

    International Nuclear Information System (INIS)

    Herrera S, H.J.; Alarcon F, G.; Aguilar F, M.; Falcony, C.; Garcia H, M.; Guzman M, J.; Araiza I, J.J.

    2005-01-01

    In this work we studied the electrical properties of yttrium oxide thin films obtained by spray pyrolysis from Y(acac) 3 and N,N-DMF. The films were deposited on Si(100) substrates at temperatures of 400, 450, 500 and 550 C. The electrical characteristic of the films was improved when a mist of H 2 O and/or NH 4 0H was simultaneously added to the deposition system. Current and capacitance versus voltage measurements were obtained when the Y 2 O 3 films were integrated in MOS (Metal-Oxide-Semiconductor) structures. Y 2 O 3 films with a dielectric constant up to 15 were obtained. The films can stand electric fields up to 2 MV/cm. An interface state density in the range of 10 10 -10 11 cm -2 eV -1 was measured at midgap from the high and low frequency capacitance measurements. (Author)

  14. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-01-01

    Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

  15. Superior environment resistance of quartz crystal microbalance with anatase TiO2/ZnO nanorod composite films

    International Nuclear Information System (INIS)

    Qiang, Wei; Wei, Li; Shaodan, Wang; Yu, Bai

    2015-01-01

    Graphical abstract: ZnO nanorod array being prepared by an in situ method on the QCM coated with Au film via hydrothermal process and surface modification with coated TiO 2 by sol–gel methods to form a superhydrophobic TiO 2 /ZnO composite film the anatase TiO 2 /ZnO nanorod composite film with a sharp, pencil-like structure exhibiting excellent superhydrophobicity (water contact angle of 155°), non-sticking water properties, and an autonomous cleaning property under UV irradiation. The anatase TiO 2 /ZnO nanorod composite film facilitates the precise measurement and extended lifetime of the QCM for the detection of organic gas molecules. - Highlights: • This work combines, for the first time, the advantage of the TiO 2 /ZnO composite film on photocatalysis and reversible super-hydrophobic and super-hydrophilic transition, and puts forward a solution to satisfy weatherability of quartz crystal microbalance in long-term application. • The anatase TiO 2 /ZnO nanorod composite film with pencil structure exhibit excellent super-hydrophobicity (water contact angle can reach 155°), no-sticking water properties and self-cleaning property under UV irradiation. • The photocatalysis and reversible super-hydrophobic and super-hydrophilic transition of the TiO 2 /ZnO nanorod composite film is stable in long-term application. - Abstract: The precise measurement of quartz crystal microbalance (QCM) in the detection and weighing of organic gas molecules is achieved due to excellent superhydrophobicity of a deposited film composite. Photocatalysis is utilized as a method for the self-cleaning of organic molecules on the QCM for extended long-term stability in the precision of the instrument. In this paper, ZnO nanorod array is prepared via in situ methods on the QCM coated with Au film via hydrothermal process. Subsequently, a TiO 2 /ZnO composite film is synthesized by surface modification with TiO 2 via sol–gel methods. Results show the anatase TiO 2 /ZnO nanorod

  16. Photodegradation properties and optics of Ag/TiO2 films

    International Nuclear Information System (INIS)

    Tirado G, S.; Valenzuela Z, M. A.

    2016-10-01

    In the thin semiconductor films of Ag/TiO 2 the topographic properties were recorded by atomic force microscopy and the main parameters of roughness were determined; the optical properties were also recorded when determining their transmittance degree, their refractive indexes, their thickness and the bandwidth of the semiconductor Eg, both for pure TiO 2 films and the modified Ag/TiO 2 films with various layers of the Ag catalyst. The Ag/TiO 2 films that were grown by sol-gel and repeated immersion, chemical technique that has been used in the development of thin film technology, were carried out in photo catalysis, when are used in photo degradation of methyl orange at an aqueous concentration of 14 ppm, once they are characterized with several techniques required to be able to explain the possible photo catalytic reactions at the solid-aqueous interface, when irradiated with UV; with the possible application in water treatment. The photoluminescence spectra of the prepared Ag/TiO 2 samples are reported, which resulted in a green emission, characteristic of the visible, in addition to emissions in the UV range. (Author)

  17. Raman enhancement by graphene-Ga2O3 2D bilayer film.

    Science.gov (United States)

    Zhu, Yun; Yu, Qing-Kai; Ding, Gu-Qiao; Xu, Xu-Guang; Wu, Tian-Ru; Gong, Qian; Yuan, Ning-Yi; Ding, Jian-Ning; Wang, Shu-Min; Xie, Xiao-Ming; Jiang, Mian-Heng

    2014-01-28

    2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.

  18. Fabrication of highly conductive Ta-doped SnO2 polycrystalline films on glass using seed-layer technique by pulse laser deposition

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Yamada, Naoomi; Hitosugi, Taro; Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya

    2010-01-01

    We discuss the fabrication of highly conductive Ta-doped SnO 2 (Sn 1-x Ta x O 2 ; TTO) thin films on glass by pulse laser deposition. On the basis of the comparison of X-ray diffraction patterns and resistivity (ρ) values between epitaxial films and polycrystalline films deposited on bare glass, we proposed the use of seed-layers for improving the conductivity of the TTO polycrystalline films. We investigated the use of rutile TiO 2 and NbO 2 as seed-layers; these are isostructural materials of SnO 2, which are expected to promote epitaxial-like growth of the TTO films. The films prepared on the 10-nm-thick seed-layers exhibited preferential growth of the TTO (110) plane. The TTO film with x = 0.05 on rutile TiO 2 exhibited ρ = 3.5 x 10 -4 Ω cm, which is similar to those of the epitaxial films grown on Al 2 O 3 (0001).

  19. Corrosion resistance of ZrO{sub 2}–TiO{sub 2} nanocomposite multilayer thin films coated on carbon steel in hydrochloric acid solution

    Energy Technology Data Exchange (ETDEWEB)

    Abd El-Lateef, Hany M., E-mail: Hany_shubra@yahoo.co.uk; Khalaf, Mai M., E-mail: Mai_kha1@yahoo.com

    2015-10-15

    This work reports the achievement of preparing of x% zirconia (ZrO{sub 2})–titania (TiO{sub 2}) composite coatings with different ZrO{sub 2} percent on the carbon steel by dipping substrates in sol–gel solutions. The prepared coated samples were investigated by various surface techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDAX). Open-circuit potential (OCP), potentiodynamic polarization, and electrochemical impedance spectroscopy (EIS) methods were employed to investigate the corrosion resistance of the coated carbon steel substrates in 1.0 M HCl solution at 50 °C. The data showed that, the corrosion protection property is not always proportional to the percent of ZrO{sub 2}. It can be inferred that there is an optimum percent (10%ZrO{sub 2}) for beneficial effects of loading ZrO{sub 2} on the protection efficiency (98.70%), while higher loading percent of ZrO{sub 2} in the sol–gel coating leads to the formation of a fragile film with poor barrier properties. EDAX/SEM suggests that the metal surface was protected through coating with ZrO{sub 2}–TiO{sub 2} composite films. - Highlights: • Sol–gel TiO{sub 2} doped with ZrO{sub 2} films deposited on carbon steel substrate • XRD measurements of x wt.% ZrO{sub 2}–TiO{sub 2} showed the (101) peaks broader than that of TiO{sub 2}. • SEM results proved that, the cracking decreases with the number of layers. • The prepared films can improve the corrosion resistance of the carbon steel substrate. • 10%ZrO{sub 2} loading is the optimal percent for useful effects on the corrosion resistance.

  20. TiO2 and SiC nanostructured films, organized CNT structures

    Indian Academy of Sciences (India)

    sized nanostructured TiO2 films through hydrolysis of titanium tetra-isopropoxide. (TTIP) [9 ... structured TiO2 as a photocatalyst is as follows [15]:. TiO2(ns) ... The deposited films were easily detached from the silica tube and subjected to. SEM.

  1. Improvement of Flame-made ZnO Nanoparticulate Thick Film Morphology for Ethanol Sensing

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-05-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particles properties were analyzed by XRD, BET. The ZnO particle size and morphology was observed by SEM and HR-TEM revealing spheroidal, hexagonal, and rod-like morphologies. The crystallite sizes of ZnO spheroidal and hexagonal particles ranged from 10-20 nm. ZnO nanorods were ranged from 10-20 nm in width and 20-50 nm in length. Sensing films were produced by mixing the nanoparticles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder. The paste was doctor-bladed onto Al2O3 substrates interdigitated with Au electrodes. The morphology of the sensing films was analyzed by optical microscopy and SEM analysis. Cracking of the sensing films during annealing process was improved by varying the heating conditions. The gas sensing of ethanol (25-250 ppm was studied at 400 °C in dry air containing SiC as the fluidized particles. The oxidation of ethanol on the surface of the semiconductor was confirmed by mass spectroscopy (MS. The effect of micro-cracks was quantitatively accounted for as a provider of extra exposed edges. The sensitivity decreased notably with increasing crack of sensing films. It can be observed that crack widths were reduced with decreasing heating rates. Crack-free of thick (5 μm ZnO films evidently showed higher sensor signal and faster response times (within seconds than cracked sensor. The sensor signal increased and the response time decreased with increasing ethanol concentration.

  2. Synthesis, characterization and application of Co doped TiO2 multilayer thin films

    Science.gov (United States)

    Khan, M. I.

    2018-06-01

    To use the visible portion of solar light, 2% cobalt doped TiO2 (Co: TiO2) multilayer thin films having 1, 2, 3 and 4 stacked layers have been deposited on FTO substrates using spray pyrolysis technique. XRD results show that 1 and 2 layers of films have anatase phase. Brookite phase has been appeared at the 3 and 4 layered films. The average grain size of 1, 2, 3 and 4 layers of films are 14.4, 23.5, 29.7 and 33.6 nm respectively. UV-Vis results show that 4th layer film has high absorption in the visible region. The calculated Eg of 1, 2, 3 and 4 layers is 3.54, 3.42, 3.30 and 3.03 eV respectively. The calculated average sheet resistivity of 1, 2, 3 and 4 layers of films is 7.68 × 104, 4.54 × 104, 8.85 × 103 and 7.95 × 102 (ohm-m) respectively, according to four point probe technique. Solar simulator results show that highest solar conversion efficiency (5.6%) has been obtained by using 3 stacked layers photoanode. This new structure in the form of stack layers provides a way to improve the efficiency of optoelectronic devices.

  3. Superconducting TlCa2Ba2Cu3O9 thick films

    International Nuclear Information System (INIS)

    1994-01-01

    GE Corporate Research and Development's (GE-CRD) program to develop the two-zone silver addition (TZSA) process for fabricating superconducting films of TlCa 2 Ba 2 Cu 3 O 9 has activities in the areas of (1) precursor preparation, (2) the thallium oxide vapor process, (3) the effects of post-synthesis annealing ambient and temperature on superconducting properties, (4) the influence of film stoichiometry and composition on superconducting properties, (5) microstructure and film growth mechanism, (6) the preparation of thicker films, (7) the fabrication of films on flexible substrates, and (8) process scale-up. As part of its effort under the ANL Pilot Center Agreement, GE-CRD has supplied to ANL a complete two-zone furnace, has provided consultation on its use and on the planning of experiments, has processed ANL samples in GE's furnaces to help define optimum process conditions, and has provided precursor and finished films as requested. These contributions are described more fully in the descriptions of the work performed at ANL presented elsewhere in this report. Under the Pilot Center Agreement work at GE-CRD has been directed toward the optimization of the TZSA process with emphasis on (A) process improvement, (B) effects of silver content on film properties, (C) the relationship between microstructure and J c , and (D) toward the assessment of the compatibility of silver substrates with the process chemistry

  4. Production and Characterization of (004) Oriented Single Anatase TiO2 Films

    Science.gov (United States)

    Atay, Ferhunde; Akyuz, Idris; Cergel, Muge Soyleyici; Erdogan, Banu

    2018-02-01

    Highly (004) oriented anatase TiO2 films have been successfully obtained by an inexpensive ultrasonic spray pyrolysis technique at low substrate temperatures and without additional annealing. X-ray diffraction analysis, ultraviolet-visible spectroscopy and field emission scanning electron microscopy were used to analyze the structural, optical and surface properties of the films. By using the less reported TiCl4 solution, the optical band gap values falling into the visible region (between 2.70 eV and 2.92 eV) have been obtained for all films. Spectroscopic ellipsometry technique has been used to determine the dispersive refractive index and extinction coefficient of TiO2 films. Possible electrical conduction mechanisms in TiO2 films have been examined using temperature dependent conductivity measurements in the temperature range of 78-300 K. At room temperature, electrical resistivity values of TiO2 films change between 1.68 × 104 Ω cm and 5.88 × 104 Ω cm. Considering the analyzed parameters with respect to substrate temperature, this work refers to the properties of anatase TiO2 films that are strongly correlated to the growth direction, namely (004). As a result, (004) oriented anatase TiO2 films with appropriate optical band gap values are promising materials for technological applications, especially for photocatalysts.

  5. Effect of the thin Ga2O3 layer in n+-ZnO/n-Ga2O3/p-Cu2O heterojunction solar cells

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2013-01-01

    The influence of inserting a Ga 2 O 3 thin film as an n-type semiconductor layer on the obtainable photovoltaic properties in Cu 2 O-based heterojunction solar cells was investigated with a transparent conductive Al-doped ZnO (AZO) thin film/n-Ga 2 O 3 thin film/p-Cu 2 O sheet structure. It was found that this Ga 2 O 3 thin film can greatly improve the performance of Cu 2 O-based heterojunction solar cells fabricated using polycrystalline Cu 2 O sheets that had been prepared by a thermal oxidization of copper sheets. The obtained photovoltaic properties in the AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells were strongly dependent on the deposition conditions of the Ga 2 O 3 films. The external quantum efficiency obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells was found to be greater at wavelengths below approximately 500 nm than that obtained in AZO/Cu 2 O heterojunction solar cells (i.e., prepared without a Ga 2 O 3 layer) at equivalent wavelengths. This improvement of photovoltaic properties is mainly attributed to a decrease in the level of defects at the interface between the Ga 2 O 3 thin film and the Cu 2 O sheet. Conversion efficiencies over 5% were obtained in AZO/Ga 2 O 3 /Cu 2 O heterojunction solar cells fabricated using an n-Ga 2 O 3 thin-film layer prepared with a thickness of 40–80 nm at an O 2 gas pressure of approximately 1.7 Pa by a pulsed laser deposition. - Highlights: • We demonstrate high-efficiency Cu 2 O-based p-n heterojunction solar cells. • A non-doped Ga 2 O 3 thin film was used as an n-type semiconductor layer. • The Ga 2 O 3 thin film was prepared at a low temperature by a low damage deposition. • p-type Cu 2 O sheets prepared by thermal oxidization of copper sheets were used. • Conversion efficiencies over 5% were obtained in AZO/n-Ga 2 O 3 /p-Cu 2 O solar cells

  6. Preparation and characterization of TiO[sub 2]/Sb thin films for solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Badawy, W.A. (Dept. of Chemistry, Cairo Univ., Giza (Egypt))

    1993-01-01

    Pure and antimony-incorporated TiO[sub 2] thin films were prepared using a spray-CVD method. The method allows for convenient incorporation of foreign atoms into the oxide matrix during film growth. The foreign atoms in the oxide film affects both the photovoltaic and photoelectrochemical properties of the n-Si/oxide heterojunction. The characteristics of the prepared oxide films were affected significantly by the presence of antimony on the oxide matrix. The increased conductivity of the Sb-containing oxide layers is reflected in the improved photovoltaic properties of the prepared n-Si/TiO[sub 2]-Sb heterojunctions, e.g. fill factor and solar conversion efficiency. The photoelectrochemical properties of the prepared devices revealed that the charge transfer step at the oxide/electrolyte interface leads to a deterioration of the cell quality. However, this drawback has been offset by the improved properties of the heterojunction. (orig.)

  7. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wei Yaowei; Liu Hao; Sheng Ouyang; Liu Zhichao; Chen Songlin; Yang Liming

    2011-01-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO 2 /Al 2 O 3 films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm Φ samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO 2 /Al 2 O 3 films, the LIDTs were 6.73±0.47 J/cm 2 and 6.5±0.46 J/cm 2 at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.

  8. Improved performance of dye-sensitized solar cells: An TiO{sub 2}-nano-SiO{sub 2} hybrid photoanode with post-treatment of TiCl{sub 4} aqueous solution

    Energy Technology Data Exchange (ETDEWEB)

    Liu Ling; Niu Haihong; Zhang Shouwei; Wan Lei [School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), School of Chemical Engineering, HFUT, Hefei 230009 (China); Miao Shiding, E-mail: miaosd@iccas.ac.cn [School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), School of Chemical Engineering, HFUT, Hefei 230009 (China); Xu Jinzhang, E-mail: xujz@hfut.edu.cn [School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), School of Chemical Engineering, HFUT, Hefei 230009 (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer A TiO{sub 2}-nano-SiO{sub 2} hybrid film was prepared by depositing a paste of TiO{sub 2} (P{sub 25}) incorporated with SiO{sub 2}. Black-Right-Pointing-Pointer The optimal concentration of TiCl{sub 4} solution was found to be 75 mM for the post-treatment. Black-Right-Pointing-Pointer A photoelectron conversion efficiency of 6.39% was achieved for the prepared dye-sensitized solar cells (DSSCs). Black-Right-Pointing-Pointer SiO{sub 2} gives a significant improvement in the performance of the DSSCs. - Abstract: A TiO{sub 2}-nano-SiO{sub 2} hybrid film was prepared on a conductive F-doped tin oxide (FTO) substrate by depositing a mixture paste of TiO{sub 2} (P{sub 25}) and nano-sized SiO{sub 2} particles. The hybrid film was further treated by a titanium tetrachloride (TiCl{sub 4}) aqueous solution with different concentrations before it was assembled as a photoanode in dye sensitized solar cells (DSSCs). We studied the performance of DSSCs by using the dye molecule of cis-bis(isothiocy-anato)-bis-(2,2 Prime -bipyridyl-4,4 Prime -dicarboxylato) -ruthenium(II) bis-tetrabutylammonium (N719) as sensitizer. Results suggested that the post-treatment using TiCl{sub 4} could enhance the dye adsorption. The thin TiO{sub 2} layer hydrolyzed from TiCl{sub 4} could fill gaps between nanoparticles in the composite film, leading to a better electron transport than non-treated films, and improve the light harvesting efficiency. The optimal concentration was found to be 75 mM for the post-treatment of TiO{sub 2}-SiO{sub 2} hybrid film by TiCl{sub 4} solution. A photoelectron conversion efficiency of 6.39% was achieved in the back-side illuminated dye-sensitized solar cells, which is {approx}105% higher than the basic efficiency of the bare TiO{sub 2} sensitized sample. TiO{sub 2}-nano-SiO{sub 2} hybrid photoanode was prepared by incorporation of nano-sized SiO{sub 2} in the TiO{sub 2} film. The introduced SiO{sub 2} as a wide band

  9. Electrophoretic deposition of nanocrystalline TiO2 films on Ti substrates for use in flexible dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Tan Weiwei; Yin Xiong; Zhou Xiaowen; Zhang Jingbo; Xiao Xurui; Lin Yuan

    2009-01-01

    Nanocrystalline TiO 2 films were prepared on flexible Ti-metal sheets by electrophoretic deposition followed by chemical treatment with tetra-n-butyl titanate (TBT) and sintering at 450 deg. C. X-ray diffraction (XRD) analysis indicates that TBT treatment led to the formation of additional anatase TiO 2 , which plays an important role in improving the interconnection between TiO 2 particles, as well as the adherence of the film to the substrate, and in modifying the surface properties of the nanocrystalline particles. The effect of TBT treatment on the electron transport in the nanocrystalline films was studied by intensity-modulated photocurrent spectroscopy (IMPS). An increase in the conversion efficiency was obtained for the dye-sensitized solar cells with TBT-treated nanocrystalline TiO 2 films. The cell performance was further optimized by designing nanocrystalline TiO 2 films with a double-layer structure composed of a light-scattering layer and a transparent layer. The light-scattering effect of the double-layer nanocrystalline films was evaluated by diffuse reflectance spectra. Employing the double-layer nanocrystalline films as the photoelectrodes resulted in a significant improvement in the incident photo-to-current conversion efficiency of the corresponding cells due to enhanced solar absorption by light scattering. A high conversion efficiency of 6.33% was measured under illumination with 100 mW cm -2 (AM 1.5) simulated sunlight.

  10. Improved performance of CdSe/CdS/PbS co-sensitized solar cell with double-layered TiO2 films as photoanode

    Science.gov (United States)

    Zhang, Xiaolong; Lin, Yu; Wu, Jihuai; Jing, Jing; Fang, Biaopeng

    2017-07-01

    Improving the photovoltaic performance of CdSe/CdS/PbS co-sensitized double-layered TiO2 solar cells is reported. Double-layered TiO2 films with TiO2 microspheres as the light blocking layers were prepared. PbS, CdS and CdSe quantum dots (QDs) were assembled onto TiO2 photoanodes by simple successive ionic layer absorption and reaction (SILAR) to fabricate CdSe/CdS/PbS co-sensitized solar cells. An improved power conversion efficiency (PCE) of 5.11% was achieved for CdSe/CdS/PbS co-sensitized solar cells at one sun illumination (AM 1.5 G, 100 mW cm-2), which had an improvement of 22.6% over that of the CdSe/CdS co-sensitized solar cells (4.17%). This enhancement is mainly attributed to their better ability of the absorption of solar light with the existence of PbS QDs, the reduction of charge recombination of the excited electron and longer lifetime of electrons, which have been proved with the photovoltaic studies and electrochemical impedance spectroscopy (EIS).

  11. Highly efficient transparent Zn2SiO4:Mn2+ phosphor film on quartz glass

    International Nuclear Information System (INIS)

    Seo, K.I.; Park, J.H.; Kim, J.S.; Kim, G.C.; Yoo, J.H.

    2009-01-01

    Highly efficient transparent Zn 2 SiO 4 :Mn 2+ film phosphors on quartz substrates were deposited by the thermal diffusion of sputtered ZnO:Mn film. They show a textured structure with some preferred orientations. Our film phosphor shows, for the best photoluminescence (PL) brightness, a green PL brightness of about 20% of a commercial Zn 2 SiO 4 :Mn 2+ powder phosphor screen. The film shows a high transmittance of more than 10% at the red-color region. The excellence in PL brightness and transmittance can be explained in terms of the textured crystal growth with a continuous gradient of Zn 2 SiO 4 : Mn 2+ crystals.

  12. Enhancement of electron transfer from CdSe core/shell quantum dots to TiO2 films by thermal annealing

    International Nuclear Information System (INIS)

    Shao, Cong; Meng, Xiangdong; Jing, Pengtao; Sun, Mingye; Zhao, Jialong; Li, Haibo

    2013-01-01

    We demonstrated the enhancement of electron transfer from CdSe/ZnS core/shell quantum dots (QDs) to TiO 2 films via thermal annealing by means of steady-state and time-resolved photoluminescence (PL) spectroscopy. The significant decrease in PL intensities and lifetimes of the QDs on TiO 2 films was clearly observed after thermal annealing at temperature ranging from 100 °C to 300 °C. The obtained rates of electron transfer from CdSe core/shell QDs with red, yellow, and green emissions to TiO 2 films were significantly enhanced from several times to an order of magnitude (from ∼10 7 s −1 to ∼10 8 s −1 ). The improvement in efficiencies of electron transfer in the TiO 2 /CdSe QD systems was also confirmed. The enhancement could be considered to result from the thermal annealing reduced distance between CdSe QDs and TiO 2 films. The experimental results revealed that thermal annealing would play an important role on improving performances of QD based optoelectronic devices. -- Highlights: • Annealing-induced enhancement of electron transfer from CdSe to TiO 2 is reported. • CdSe QDs on TiO 2 and SiO 2 films are annealed at various temperatures. • Steady-state and time-resolved PL spectroscopy of CdSe QDs is studied. • The enhancement is related to the reduced distance between CdSe QDs and TiO 2

  13. Solution growth of Tb doped Gd_2O_3 film

    International Nuclear Information System (INIS)

    Ghosh, M.; Pitale, S.; Desai, D.G.; Patra, G.D.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Nanomaterials of Gd_2O_3 have proven applications in medical imaging and cancer therapy due to the presence of element Gd. Also Gd_2O_3 films have been grown by vapor phase method as well as self assembly in solution and studied as a high-k dielectric and efficient luminescence material. Here, we report a method to obtain Tb doped Gd_2O_3 film by solution growth method followed by suitable heat treatment. Uniform films of Tb doped Gadolinium hydroxycarbonate have been deposited on fused quartz substrates kept inside a solution containing gadolinium nitrate, terbium nitrate and Urea maintained at 90°C. Gadolinium hydroxy-carbonate films are then treated at 800°C for 2 hour to obtain Tb doped cubic Gd_2O_3 as confirmed by X-ray diffraction measurement. The photoluminescence spectra display characteristic Tb emission at 544 nm when excited at 285 nm. The lifetime of Tb emission is found to be of the order of few microseconds. (author)

  14. Amorphous and crystalline In_2O_3-based transparent conducting films for photovoltaics

    International Nuclear Information System (INIS)

    Koida, Takashi

    2017-01-01

    We reported solar cells with reduced electrical and optical losses using hydrogen-doped In_2O_3 (In_2O_3:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In_2O_3:H films grown by magnetron sputtering. The polycrystalline (poly-) In_2O_3:H films exhibited electron mobilities (over 100 cm"2V"-"1 s"-"1) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In_2O_3-based TCO; (ii) the structural and optoelectrical properties of the a-In_2O_3:H and poly-In_2O_3:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Photoemission Spectroscopy Characterization of Attempts to Deposit MoO2 Thin Film

    Directory of Open Access Journals (Sweden)

    Irfan

    2011-01-01

    Full Text Available Attempts to deposit molybdenum dioxide (MoO2 thin films have been described. Electronic structure of films, deposited by thermal evaporation of MoO2 powder, had been investigated with ultraviolet photoemission and X-ray photoemission spectroscopy (UPS and XPS. The thermally evaporated films were found to be similar to the thermally evaporated MoO3 films at the early deposition stage. XPS analysis of MoO2 powder reveals presence of +5 and +6 oxidation states in Mo 3d core level along with +4 state. The residue of MoO2 powder indicates substantial reduction in higher oxidation states while keeping +4 oxidation state almost intact. Interface formation between chloroaluminum phthalocyanine (AlPc-Cl and the thermally evaporated film was also investigated.

  16. Improving the photoluminescence response of Er-Tm: Al2O3 films by Yb codoping

    International Nuclear Information System (INIS)

    Xiao Zhisong; Serna, R.; Afonso, C.N.; Cheng Guoan; Vickridge, I.

    2007-01-01

    Amorphous Al 2 O 3 films doped with Er, Tm and Yb have been prepared by pulsed laser deposition. A broadband emission in the range 1400-1700 nm with two peaks around 1540 and 1640 nm has been observed, both in the Er-Tm and Er-Tm-Yb codoped films. The Tm-related photoluminescence (PL) intensity at 1640 nm is enhanced when codoping with Yb thus suggesting the existence of multiple energy transfer processes from Yb to Er and Er to Tm. The Er-Tm-Yb codoped film exhibits a broadband emission with a full-width half-maximum of 184 nm similar to that of the film codoped with Tm and Er but having higher Tm to Er concentration ratio and higher PL lifetime values

  17. Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

    KAUST Repository

    Fuentes-Fernandez, E. M A

    2010-11-18

    0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.

  18. Preparation and characterization of novel nanocomposite films formed from silk fibroin and nano-TiO2.

    Science.gov (United States)

    Feng, Xin-Xing; Zhang, Li-Li; Chen, Jian-Yong; Guo, Yu-Hai; Zhang, Hua-Peng; Jia, Chang-Ian

    2007-01-30

    This paper describes the synthesis and characterization of new regenerated silk fibroin (SF)/nano-TiO(2) composite films. The preparation method, based on the sol-gel technique using butyl titanate as oxide precursor, could avoid reagglomeration of the prepared nanoparticles. Samples were characterized mainly by X-ray diffraction (XRD), ultra-violet (UV) spectroscopy, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and thermogravimetric analysis (TGA). The UV and AFM results indicated that TiO(2) nanoparticles could be well dispersed inside the SF film, and the size of TiO(2) was about 80nm. The XRD and FT-IR analysis implied that the formation of nano-TiO(2) particles may induce the conformational transition of silk fibroin to a typical Silk II structure partly with the increasing of crystallinity in the composite films. Compared to the pure SF films, the mechanical and thermal properties of composite films were improved, and the solubility in water was decreased due to the conformational transition of silk fibroin to Silk II structure.

  19. Thin nanostructured crystalline TiO{sub 2} films and their applications in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Yajun

    2007-06-15

    morphology of TiO{sub 2} films can also be controlled. The local and long range structures of the titania films were investigated by the combination of imaging techniques (AFM, SEM) and x-ray scattering techniques (X-ray reflectivity and grazing incidence small-angle X-ray scattering). Based on the knowledge of the morphology control, the crystalline TiO{sub 2} nanostructured films with different morphologies were introduced into solid state dye-sensitized solar cells. It has been found that all of the morphologies help to improve the performance of the solar cells. Especially, clustered nanoparticles, worm-like structures, foam-like structures, large collapsed nanovesicles show more pronounced performance improvement than other morphologies such as nanowires, flakes, and nanogranulars. (orig.)

  20. Spin Speed and Duration Dependence of TiO2 Thin Films pH Sensing Behavior

    Directory of Open Access Journals (Sweden)

    Muhammad AlHadi Zulkefle

    2016-01-01

    Full Text Available Titanium dioxide (TiO2 thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET pH sensor. TiO2 thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2 thin films were investigated. The spin coated TiO2 thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm.

  1. Synthesis of nanocrystalline TiO2 thin films by liquid phase ...

    Indian Academy of Sciences (India)

    WINTEC

    goes degradation efficiently in presence of TiO2 thin films by exposing its aqueous solution to .... Figure 6. Photodegradation of IGOR organic dye by a. bare TiO2 thin film and b. ... Meng L-J and Dos Santos M P 1993 Thin Solid Films 226 22.

  2. Improvement in electrical insulating properties of 10-nm-thick Al2O3 film grown on Al/TiN/Si substrate by remote plasma annealing at low temperatures

    International Nuclear Information System (INIS)

    Kim, Jihoon; Song, Jaewon; Kwon, Ohsung; Kim, Sungkeun; Hwang, Cheol Seong; Park, Sang-Hee'Ko; Yun, Sun Jin; Jeong, Jaehack; Hyun, Kwang Soo

    2002-01-01

    The electrical conduction properties of 10-nm-thick atomic-layer deposited Al 2 O 3 thin films with Al bottom and Pt top electrodes were characterized for use in field emission display. The as-deposited films, grown at 300 deg. C, exhibited such a high electrical leakage that their electrical properties could not be measured. However, post-treatment at 300 deg. C under a remote O 2 or H 2 O plasma for 30 min improved the insulating properties of the Al 2 O 3 films. However, the electrical conduction mechanism, particularly in the high field (>4 MV/cm) was not Fowler-Nordheim (F-N) tunneling but was influenced by space charge limited conduction implying that there were many traps inside the dielectric film or the electrode interfaces. Postannealing of the top electrode at 300 deg. C in an oxygen atmosphere resulted in a F-N conduction mechanism by removing the interfacial traps. The calculated barrier height at the Al/Al 2 O 3 interface from the F-N fitting of the current density versus voltage curves using the electron effective mass (m * ) of 0.5 m 0 was approximately 2.0 eV

  3. Photoelectrochemical Characterization of Sprayed alpha-Fe2O3 Thin Films : Influence of Si Doping and SnO2 Interfacial Layer

    NARCIS (Netherlands)

    Liang, Y.; Enache, C.S.; Van De Krol, R.

    2008-01-01

    a-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc)3. The donor density in the Fe2O3 films could be tuned between 10171020cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting

  4. Photocatalytic properties of P25-doped TiO2 composite film synthesized via sol-gel method on cement substrate.

    Science.gov (United States)

    Guo, Xiang; Rao, Lei; Wang, Peifang; Wang, Chao; Ao, Yanhui; Jiang, Tao; Wang, Wanzhong

    2018-04-01

    TiO 2 films have received increasing attention for the removal of organic pollutants via photocatalysis. To develop a simple and effective method for improving the photodegradation efficiency of pollutants in surface water, we herein examined the preparation of a P25-TiO 2 composite film on a cement substrate via a sol-gel method. In this case, Rhodamine B (RhB) was employed as the target organic pollutant. The self-generated TiO 2 film and the P25-TiO 2 composite film were characterized by X-ray diffraction (XRD), N 2 adsorption/desorption measurements, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and diffuse reflectance spectroscopy (DRS). The photodegradation efficiencies of the two films were studied by RhB removal in water under UV (ultraviolet) irradiation. Over 4day exposure, the P25-TiO 2 composite film exhibited higher photocatalytic performance than the self-generated TiO 2 film. The photodegradation rate indicated that the efficiency of the P25-TiO 2 composite film was enhanced by the addition of the rutile phase Degussa P25 powder. As such, cooperation between the anatase TiO 2 and rutile P25 nanoparticles was beneficial for separation of the photo-induced electrons and holes. In addition, the influence of P25 doping on the P25-TiO 2 composite films was evaluated. We found that up to a certain saturation point, increased doping enhanced the photodegradation ability of the composite film. Thus, we herein demonstrated that the doping of P25 powders is a simple but effective strategy to prepare a P25-TiO 2 composite film on a cement substrate, and the resulting film exhibits excellent removal efficiency in the degradation of organic pollutants. Copyright © 2017. Published by Elsevier B.V.

  5. Intrinsic Photocatalytic Assessment of Reactively Sputtered TiO2 Films

    NARCIS (Netherlands)

    Rafieian Boroujeni, Damon; Driessen, Rick Theodorus; Driessen, Rick T.; Ogieglo, Wojciech; Lammertink, Rob G.H.

    2015-01-01

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during

  6. Microwave-assisted synthesis and characterization of poly(acrylic)/SiO2-TiO2 core-shell nanoparticle hybrid thin films

    International Nuclear Information System (INIS)

    Chien, Wen-Chen; Yu, Yang-Yen; Chen, Po-Kan; Yu, Hui-Huan

    2011-01-01

    In this study, poly(acrylic)/SiO 2 -TiO 2 core-shell nanoparticle hybrid thin films were successfully synthesized by microwave-assisted polymerization. The coupling agent 3-(trimethoxysilyl) propyl methacrylate (MSMA) was hydrolyzed with colloidal SiO 2 -TiO 2 core-shell nanoparticles, and then polymerized with two acrylic monomers and initiator to form a precursor solution. The results of this study showed that the spin-coated hybrid films had relatively good surface planarity, high thermal stability, a tunable refractive index (1.525 2 -TiO 2 core-shell nanoparticle hybrid thin films, for potential use in optical applications.

  7. Photocatalytically active Au/TiO2 films deposited by two-step spray pyrolysis

    International Nuclear Information System (INIS)

    Balashev, Konstantin; Georgiev, Petar; Simeonova, Sylvia; Stambolova, Irina; Blaskov, Vladimir; Vassilev, Sasho; Eliyas, Alexander

    2016-01-01

    Nanocrystalline TiO 2 and surface gold-modified films (Au/TiO 2 ) are obtained by two step spray pyrolysis process. Titanium tetrachloride (TiCl 4 ) was used as inorganic titanium precursor. The Au nanoparticles were deposited on the surface of sprayed TiO 2 films, obtained by the classical Turkevich method. The AFM analyses have revealed that the roughness of Au/TiO 2 is twice lower than that of the reference titania film. Some globular species are visible on the surface, which could be either individual Au nanoparticles or Au nanoparticles’ agglomerates embedded into the TiO 2 film. The photocatalytic activity in the oxidative degradation of Reactive Black 5 dye under visible light of the Au/TiO 2 films was estimated in a semi-batch reactor. Surface gold modified TiO 2 films revealed higher photocatalytic efficiency than the reference sample. Key words: Au nanoparticles, photocatalysis, azo dye, titania, nanosized

  8. Photocatalytic activity of Al2O3-doped TiO2 thin films activated with visible light on the bacteria Escherichia coli

    International Nuclear Information System (INIS)

    Barajas-Ledesma, E.; Garcia-Benjume, M.L.; Espitia-Cabrera, I.; Bravo-Patino, A.; Espinoza-Beltran, F.J.; Mostaghimi, J.; Contreras-Garcia, M.E.

    2010-01-01

    Al 2 O 3 -doped TiO 2 thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. A Corning* glass was used as a substrate, in which a titanium film was deposited by sputtering. Then, a precursor sol was prepared with Ti(n-OBu) 4 and Al(s-OBu) 3 and used as the medium for EPD. Next, the thin films were sintered and, finally, characterised by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Several cultures of Escherichia coli, strain XL1-Blue, were prepared. Nine experiments were carried out. In three of them, an inoculum (a low amount of a product that contains bacteria) was prepared without a film; in the other six Al 2 O 3 -doped TiO 2 film-coated glass substrates were irradiated with visible light before they were introduced in the inoculum. The SEM and EDS results showed that TiO 2 -Al 2 O 3 films were obtained, covering all the glass substrate and with uniform size of particles forming them, and that the aluminium was distributed uniformly on the film. XRD results showed that rutile phase was obtained. By TEM, the structure of TiO 2 was demonstrated. Al 2 O 3 -doped TiO 2 thin films were successful at eliminating E. coli.

  9. Fabrication of a TiO2-P25/(TiO2-P25+TiO2 nanotubes junction for dye sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Nguyen Huy Hao

    2016-08-01

    Full Text Available The dye sensitized solar cell (DSSC, which converts solar light into electric energy, is expected to be a promising renewable energy source for today's world. In this work, dye sensitized solar cells, one containing a single layer and one containing a double layer, were fabricated. In the double layer DSSC structure, the under-layer was TiO2-P25 film, and the top layer consisted of a mixture of TiO2-P25 and TiO2 nanotubes. The results indicated that the efficiency of the DSSC with the double layer structure was a significant improvement in comparison to the DSSC consisting of only a single film layer. The addition of TiO2-P25 in the top layer caused an improvement in the adsorption of dye molecules on the film rather than on the TiO2 nanotubes only. The presence of the TiO2 nanotubes together with TiO2-P25 in the top layer revealed the enhancement in harvesting the incident light and an improvement of electron transport through the film.

  10. Surface Modification of Aerosol-Assisted CVD Produced TiO2 Thin Film for Dye Sensitised Solar Cell

    Directory of Open Access Journals (Sweden)

    SuPei Lim

    2014-01-01

    Full Text Available We report a simple and convenient method for the preparation of Ag/TiO2 thin films supported on indium tin oxide, which was achieved by sonochemical deposition of Ag+ on aerosol-assisted chemical vapour deposited TiO2 thin films. Posttreatment was performed on the film by immersion in HCl. The as-prepared composite film was characterised by X-ray diffraction, ultraviolet-visible absorption spectroscopy, Raman spectroscopy, and field emission scanning electron microscopy. The photoelectrochemical measurements and J-V characterisation showed approximately fivefold increase in photocurrent density generation and approximately sevenfold enhancement in dye sensitiser solar cell (DSSC conversion efficiency, which was achieved after modification of the TiO2 film with HCl posttreatment and Ag particle deposition. The improved photocurrent density of 933.30 μA/cm2, as well as DSSC power conversion efficiency of 3.63% with high stability, is an indication that the as-synthesised thin film is a potential candidate for solar energy conversion applications.

  11. Reporting performance in MoS{sub 2}–TiO{sub 2} bilayer and heterojunction films based dye-sensitized photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    He, Zuoli, E-mail: wandaohzl@163.com; Que, Wenxiu, E-mail: wxque@mail.xjtu.edu.cn; Xing, Yonglei; Liu, Xiaobin

    2016-07-05

    Three types of bilayer and heterojunction films photoanodes were designed and fabricated from green synthesized MoS{sub 2} and TiO{sub 2} nanoparticles (NPs), and then the dye-sensitized solar cells based on these various films photoanodes were investigated. Results demonstrated that layered semiconductor MoS{sub 2} could be a viable material candidate for solar cell applications due to its superior photoelectric characteristics. The DSSCs from the MoS{sub 2}@TiO{sub 2} heterojunction film photoanode exhibit the highest solar energy conversion efficiency of 6.02% under AM 1.5G simulated solar irradiation, which is 1.5 times higher than that of the cell from pure TiO{sub 2} film photoanode. MoS{sub 2}–TiO{sub 2} heterojunction at the interface helps MoS{sub 2} NPs to efficiently collect the photo-injected electrons from TiO{sub 2} NPs, thus reduce charge recombination at both the NPs-electrolyte and NPs-dye interfaces. These advantages together with collecting or transferring injected electrons abilities by combining the improved light absorption and the large dye-loading capacity of such structural NPs films, rendering the MoS{sub 2}–TiO{sub 2} composite photoelectrode superior potential for DSSCs applications. - Highlights: • MoS{sub 2} and TiO{sub 2} NPs were synthesized via green process using rape pollen grains as bio-templates. • DSSCs based on these various bilayer and heterojunction films photoanodes were investigated. • Enhanced η of MoS{sub 2}@TiO{sub 2} based DSSCs was related to its strong light adsorption ability. • The mechanism of electron transport in these various films photoanodes was proposed.

  12. N-type Cu2O Film for Photocatalytic and Photoelectrocatalytic Processes: Its stability and Inactivation of E. coli

    International Nuclear Information System (INIS)

    Xiong, Liangbin; Ng, Tsz Wai; Yu, Ying; Xia, Dehua; Yip, Ho Yin; Li, Guiying; An, Taicheng; Zhao, Huijun; Wong, Po Keung

    2015-01-01

    Highlights: • Photoelectrocatalytic inactivation of E. coli by Cu 2 O film was firstly reported. • 7 log of E. coli could be completely inactivated in 2 h by Cu 2 O with a 0.1 V bias. • Charge transfer between Cu 2 O and E. coli was monitored by electrochemical technique. • Inactivation of E. coli by electric charges of electrodes was in-depth investigated. • Stability of N-type Cu 2 O as a photocatalyst was studied for the first time. - ABSTRACT: Photoelectrocatalytic (PEC) inactivation of Escherichia coli K-12 by cuprous oxide (Cu 2 O) film irradiated by visible light is firstly reported. A complete inactivation of about 7 log of E. coli was obtained for Cu 2 O film within 6 h. The bacterial inactivation efficiency was significantly improved in a photoelectrochemical cell, in which 7 log of E. coli could be completely inactivated within 2 h by Cu 2 O film with a 0.1 V bias. Electric charge transfer between electrodes and E. coli, and electric charge inactivation towards E. coli were investigated using membrane-separated reactor combined with short circuit photocurrent technique. H 2 O 2 , hole, and toxicity of Cu 2 O film were found responsible for the inactivation of E. coli. Toxicity of copper ions (including Cu 2+ and Cu + ) leakage from Cu 2 O films was determined and the results showed that the amount of leakage copper ions was not toxic to E. coli. Finally, the Cu 2 O film was proved to be effective and reusable for PC and PEC inactivation of E. coli

  13. Thickness-dependence of optical constants for Ta2O5 ultrathin films

    International Nuclear Information System (INIS)

    Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

    2012-01-01

    An effective method for determining the optical constants of Ta 2 O 5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta 2 O 5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta 2 O 5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta 2 O 5 . This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

  14. Thickness-dependence of optical constants for Ta2O5 ultrathin films

    Science.gov (United States)

    Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

    2012-09-01

    An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

  15. Properties of epitaxial Ba2YCu3O7-x films on LaAlO3(001) grown using optimized conditions

    International Nuclear Information System (INIS)

    Siegal, M.P.; Phillips, J.M.; van Dover, R.B.; Tiefel, T.H.; Marshall, J.H.; Carlson, D.J.

    1990-01-01

    The superconducting and structural properties of Ba 2 YCu 3 O 7-x (BYCO) films on LaAlO 3 (001) substrates can be improved by carefully optimizing the post-deposition annealing parameters. Films are grown by codeposition of BaF 2 , Y, and Cu in the correct stoichiometric ratio to within 1% of 2:1:3. Compositional deviations greater than ± 1% result in the degradation of film quality. Important annealing parameters include the ambient, annealing temperature, oxidation temperature, and duration of the anneal. Films are characterized for epitaxial quality (χ min ), morphology, critical temperature (T c ), sharpness of the superconducting transition (ΔT), and critical current density (J c ). The optimized films have relatively smooth morphology with χ min c > 90 K, ΔT c > 10 6 A/cm 2 in essentially zero magnetic field at 77 K

  16. Temperature dependent optical characterization of Ni-TiO2 thin films as potential photocatalytic material

    Science.gov (United States)

    De, Rajnarayan; Haque, S. Maidul; Tripathi, S.; Rao, K. Divakar; Singh, Ranveer; Som, T.; Sahoo, N. K.

    2017-09-01

    Along with other transition metal doped titanium dioxide materials, Ni-TiO2 is considered to be one of the most efficient materials for catalytic applications due to its suitable energy band positions in the electronic structure. The present manuscript explores the possibility of improving the photocatalytic activity of RF magnetron sputtered Ni-TiO2 films upon heat treatment. Optical, structural and morphological and photocatalytic properties of the films have been investigated in detail for as deposited and heat treated samples. Evolution of refractive index (RI) and total film thickness as estimated from spectroscopic ellipsometry characterization are found to be in agreement with the trend in density and total film thickness estimated from grazing incidence X-ray reflectivity measurement. Interestingly, the evolution of these macroscopic properties were found to be correlated with the corresponding microstructural modifications realized in terms of anatase to rutile phase transformation and appearance of a secondary phase namely NiTiO3 at high temperature. Corresponding morphological properties of the films were also found to be temperature dependent which leads to modifications in the grain structure. An appreciable reduction of optical band gap from 2.9 to 2.5 eV of Ni-TiO2 thin films was also observed as a result of post deposition heat treatment. Testing of photocatalytic activity of the films performed under UV illumination demonstrates heat treatment under atmospheric ambience to be an effective means to enhance the photocatalytic efficiency of transition metal doped titania samples.

  17. Preparation and structural characterization of SnO2 and GeO2 methanol steam reforming thin film model catalysts by (HR)TEM

    International Nuclear Information System (INIS)

    Lorenz, Harald; Zhao Qian; Turner, Stuart; Lebedev, Oleg I.; Van Tendeloo, Gustaaf; Kloetzer, Bernhard; Rameshan, Christoph; Penner, Simon

    2010-01-01

    Structure, morphology and composition of different tin oxide and germanium oxide thin film catalysts for the methanol steam reforming (MSR) reaction have been studied by a combination of (high-resolution) transmission electron microscopy, selected area electron diffraction, dark-field imaging and electron energy-loss spectroscopy. Deposition of the thin films on NaCl(0 0 1) cleavage faces has been carried out by thermal evaporation of the respective SnO 2 and GeO 2 powders in varying oxygen partial pressures and at different substrate temperatures. Preparation of tin oxide films in high oxygen pressures (10 -1 Pa) exclusively resulted in SnO phases, at and above 473 K substrate temperature epitaxial growth of SnO on NaCl(0 0 1) leads to well-ordered films. For lower oxygen partial pressures (10 -3 to 10 -2 Pa), mixtures of SnO and β-Sn are obtained. Well-ordered SnO 2 films, as verified by electron diffraction patterns and energy-loss spectra, are only obtained after post-oxidation of SnO films at temperatures T ≥ 673 K in 10 5 Pa O 2 . Preparation of GeO x films inevitably results in amorphous films with a composition close to GeO 2 , which cannot be crystallized by annealing treatments in oxygen or hydrogen at temperatures comparable to SnO/SnO 2 . Similarities and differences to neighbouring oxides relevant for selective MSR in the third group of the periodic system (In 2 O 3 and Ga 2 O 3 ) are also discussed with the aim of cross-correlation in formation of nanomaterials, and ultimately, also catalytic properties.

  18. Room-temperature synthesis and characterization of porous CeO2 thin films

    International Nuclear Information System (INIS)

    Chu, Dewei; Masuda, Yoshitake; Ohji, Tatsuki; Kato, Kazumi

    2012-01-01

    CeO 2 thin films with hexagonal-shaped pores were successfully prepared by a facile electrodeposition at room temperature combined with an etching process. By using electrodeposited ZnO nanorods as a soft template, the morphology, and microstructure of the CeO 2 could be controlled. TEM observation indicated that as-prepared CeO 2 film is composed of nanocrystals with average size of several nanometers, while XPS analysis showed the coexistence of Ce 3+ and Ce 4+ in the film. The photoluminescence properties of CeO 2 films were measured, which showed much higher sensitivity compared to bare substrate. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Ferroelectric properties of bilayer structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films on Pt/TiO2/SiO2/Si substrates

    International Nuclear Information System (INIS)

    Zhang Wenqi; Li Aidong; Shao Qiyue; Xia Yidong; Wu Di; Liu Zhiguo; Ming Naiben

    2008-01-01

    Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films with large remanent polarization and SrBi 2 Ta 2 O 9 (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages , bilayered Pb(Zr 0.52 Ti 0.48 )O 3 /SrBi 2 Ta 2 O 9 (PZT/SBT) thin films were fabricated on Pt/TiO 2 /SiO 2 /Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P r ) of 18.37 μC/cm 2 than pure SBT and less polarization fatigue up to 1 x 10 9 switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications

  20. Preparation of mesoporous CdS-containing TiO{sub 2} film and enhanced visible light photocatalytic property

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Yanmei; Wang, Renliang, E-mail: rlwang@tsmc.edu.cn; Zhang, Wenping; Ge, Haiyan; Wang, Xiaopeng; Li, Li

    2015-01-15

    Highlights: • Well-dispersed distribution of CdS nanoparticles inside of TiO{sub 2} mesoporous structures was fabricated. • The sensitization of CdS nanoparticles significantly extends the response of TiO{sub 2} mesoporous film in the visible region. • An improved visible light photocatalytic activity was observed by the CdS–MTF. - Abstract: Mesoporous TiO{sub 2} films containing CdS nanocrystals were successfully fabricated by a two-step process of successive ionic layer adsorption and reaction (SILAR) technique and a solvothermal method followed by annealing. The distribution of CdS nanoparticles in the inner structures of the TiO{sub 2} mesoporous films is confirmed by field emission scanning electron microscope. The CdS modification of the mesoporous films results in an increase in the visible light adsorption, and exhibits more excellent photocatalytic degradation of methyl orange (MO) under visible light irradiation.

  1. Improved electrical properties of La{sub 2/3}Ba{sub 1/3}MnO{sub 3}:Ag{sub 0.04} thin films by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiang; Yin, Xue-Peng; Chen, Qing-Ming; Zhang, Hui; Zhang, Shao-Chun [Kunming University of Science and Technology, Faculty of Material Science and Engineering, Kunming, Yunnan (China)

    2014-09-15

    La{sub 2/3}Ba{sub 1/3}MnO{sub 3}:Ag{sub 0.04} (LBMO:Ag{sub 0.04}) thin films were prepared on single crystalline (001)-orientated LaAlO{sub 3} substrates by pulsed laser deposition technique. Thermal annealing with temperatures of 780, 800 and 820 C has been investigated to improve electrical properties of the films. All the samples are shown along the (00l) orientation in rhombohedral structure with R anti 3c space group. With thermal annealing temperature increasing, insulator-metal transition temperature (T{sub p}) and resistivity at T{sub p} (ρ{sub T{sub p}}) of the epilayer reach optimal value of 288 K and 0.03 Ω.cm, respectively. The electrical properties improvement of the LBMO:Ag{sub 0.04} films is due to an improved film crystallization, oxygen balance and photon scattering suppression. The fitting curves show that the region of ferro-magnetic metallic (FM, T < T{sub p}) is fitted with grain/domain boundary, electron-electron and magnon scattering mechanism, as well as the region of para-magnetic insulating (PI, T > T{sub p}) is fitted with adiabatic small polaron hopping mechanism. (orig.)

  2. Enhancement of photoelectric catalytic activity of TiO2 film via Polyaniline hybridization

    International Nuclear Information System (INIS)

    Wang Yajun; Xu Jing; Zong Weizheng; Zhu Yongfa

    2011-01-01

    A Polyaniline (PANI)/TiO 2 film coated on titanium foil was successfully prepared using the sol-gel method followed by a facile chemisorption. Compared with pristine TiO 2 , the photocatalytic (PC) and photoelectrocatalytic (PEC) degradation rates of 2,4-dichlorophenol (2,4-DCP) with the PANI/TiO 2 film were enhanced by 22.2% and 57.5%, respectively. 2,4-DCP can be mineralized more effectively in the presence of PANI/TiO 2 film. The best PEC degradation efficiency of 2,4-DCP with the PANI/TiO 2 film was acquired at an external potential of 1.5 V with a layer of 1 nm thick PANI. The PANI/TiO 2 film was characterized by Raman spectra, Fourier transform infrared spectra (FT-IR), Auger electron spectroscopy (AES), and electrochemical analysis. These results indicated that there was a chemical interaction on the interface of PANI and TiO 2 . This interaction may be of significance to promote the migration efficiency of carriers and induce a synergetic effect to enhance the PC and PEC activities. - Graphical abstract: The effect of PANI content on 2,4-DCP degradation with initial concentration of 50 mg/L, external potential=1.5 V. Inset: degradation rate constants of various PANI/TiO 2 films. Highlights: → Polyaniline/TiO 2 film was prepared using the sol-gel method followed by chemisorption. → Photoelectrocatalytic degradation rate of 2,4-dichlorophenol was enhanced by 57.5%. → The modification of Polyaniline to TiO 2 film caused a rapid charge separation. → Best degradation efficiency was acquired at 1.5 V with 1 nm thick PANI.

  3. Microstructural, photocatalysis and electrochemical investigations on CeTi2O6 thin films

    International Nuclear Information System (INIS)

    Verma, Amita; Goyal, Anshu; Sharma, R.K.

    2008-01-01

    The properties of sol-gel derived CeTi 2 O 6 thin films deposited using a solution of cerium chloride heptahydrate and titanium propoxide in ethanol are discussed. The effect of annealing temperature on structural, optical, photoluminescence, photocatalysis and electrochemical characteristics has been examined. Lowest annealing temperature for the formation of crystalline CeTi 2 O 6 phase in these samples is identified as 580 deg. C. The optical transmittance of the films is observed to be independent of the annealing temperature. The optical energy bandgap of the 600 deg. C annealed film for indirect transition is influenced by the presence of anatase phase of TiO 2 in its structure. Fourier transform infrared spectroscopy investigations have evidenced increased bond strength of the Ti-O-Ti network in the films as a function of annealing temperature. The photoluminescence intensity of the films has shown dependence on the annealing temperature with the films fired at 450 deg. C exhibiting the maximum photoluminescence activity. The decomposition of methyl orange and eosin (yellow) under UV-visible light irradiation in the presence of crystalline CeTi 2 O 6 films shows the presence of photoactivity in these films. The photocatalytic response of CeTi 2 O 6 films is found to be superior to the TiO 2 films. In comparison to crystalline films, the amorphous films have shown superior electrochemical characteristics. The 500 deg. C annealed amorphous films have exhibited the most appropriate properties for incorporation in electrochromic devices comprising tungsten oxide as the primary electrochromic electrode

  4. Optical and structural properties of nanostructured CeO2:Tb3+ film

    International Nuclear Information System (INIS)

    Ansari, Anees A.; Singh, S.P.; Malhotra, B.D.

    2011-01-01

    Nanostructured CeO 2 :Tb 3+ film has been fabricated on glass substrate through sol-gel technique via dip-coating process. (NH 4 ) 2 Ce(NO 3 ) 6 , Tb(NO 3 ) 3 .6H 2 O, ethylene glycol have been used as precursors for sol preparation. X-ray diffraction (XRD), scanning electron microscopy (SEM), UV/VIS and photoluminescence (PL) spectral studies have been employed to analyze the structural and optical properties of the film. XRD pattern has been used to analyze the crystallite nature and calculated particle size by Scherrer equation of nanostructured CeO 2 :Tb 3+ film, found in the range 3-4 nm. SEM image has been observed to analyze the surface topography of the film which is well porous, highly agglomerated and uniformly distributed nanoparticles on the film surface. Optical band gap of nanostructured CeO 2 :Tb 3+ film has been estimated as 3.57 eV. A significant enhancement in band shape of CeO 2 :Tb 3+ spectrum has been observed in PL spectra, showed their promising usages as optical materials in optoelectronic devices.

  5. Low temperature composite bolometers using RuO2 films as a thermistor

    International Nuclear Information System (INIS)

    Chapellier, M.; Rasmussen, F.B.

    1989-01-01

    Results from a massive composite bolometer made of a sapphire crystal and ruthenium oxide films are presented. The properties of such RuO 2 films, in the temperature range [50 mK, 200 mK] have been studied. Individual particle detections, using an 241 Am source, have been used to calibrate the system in this temperature interval. Improvements in the performances of such detectors lead to consider them as realistic candidates for the detection of Dark Matter

  6. Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

    Science.gov (United States)

    Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

    2017-08-01

    A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

  7. The properties of transparent TiO2 films for Schottky photodetector

    Directory of Open Access Journals (Sweden)

    Sung-Ho Park

    2017-08-01

    Full Text Available In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as “High-performing transparent photodetectors based on Schottky contacts” (Patel et al., 2017 [1]. The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015 [2]. This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.

  8. Analyses of desorbed H2O with temperature programmed desorption technique in sol-gel derived HfO2 thin films

    International Nuclear Information System (INIS)

    Shimizu, H.; Nemoto, D.; Ikeda, M.; Nishide, T.

    2009-01-01

    Hafnium oxide (HfO 2 ) is a promising material for the gate insulator in highly miniaturized silicon (Si) ultra-large-scale-integration (ULSI) devices (32 nm and beyond). In the field chemistry, a sol-gel processing has been used to fabricate HfO 2 thin film with the advantages of low cost, relative simplicity, and easy control of the composition of the layers formed. Temperature-programmed desorption (TPD) has been used not only for analyzing adsorbed gases on the surfaces of bulk sol-gel-derived HfO 2 of sol-gel-derived HfO 2 thin film fired at 350, 450, 550 and 700 deg C in sol-gel derived HfO 2 films in air is investigated using TPD, and also the material characterization of HfO 2 thin films is evaluated by X-ray diffraction (XRD) method. The dielectric constant of the films was also estimated using the capacitance-voltage (C-V) method. TPD is essentially a method of analyzing desorped gases from samples heated by infra-red light as a function of temperature under vacuum conditions using a detector of quadruple mass spectroscopy (QMS). Sol-gel-derived HfO 2 films were fabricated on 76-mm-diameter Si(100) wafers as follows. Hafnia sol solutions were prepared by dissolving HfCl 4 in NH 4 OH solution, followed by the of HCOOH. (author)

  9. Superhydrophobicity and regeneration of PVDF/SiO2 composite films

    Science.gov (United States)

    Liu, Tao; Li, Xianfeng; Wang, Daohui; Huang, Qinglin; Liu, Zhen; Li, Nana; Xiao, Changfa

    2017-02-01

    Superhydrophobicity of polymers is easily destroyed by careless touching due to the softness of microstructures. In this study, based on a well-constructed polyvinylidene fluoride (PVDF) surface, a novel superhydrophobic PVDF/SiO2 composite film was fabricated by adding hydrophobic SiO2 nanoparticle and solvent into a coagulation bath. The water contact angle of the composite film reached 162.3° and the sliding angle was as low as 1.5°. More importantly, the composite film could be regenerated only through immersing the composite film in the designed regeneration agent. The composition of the designed regeneration agent ensured that SiO2 nanoparticles were firmly adhered on the film surface even under the ultrasonic cleaning. Hence, the superhydrophobicity and self-cleaing property could be regenerated and maintained effectively, and moreover, these propeties could resist a proper pressure. In addition, after many rubbing-regenerating cycles, the regeneration method was still valid.

  10. Pulsed Laser deposition of Al2O3 thin film on silicon

    International Nuclear Information System (INIS)

    Lamagna, A.; Duhalde, S.; Correra, L.; Nicoletti, S.

    1998-01-01

    Al 2 O 3 thin films were fabricated by pulsed laser deposition (PLD) on Si 3 N 4 /Si, to improve the thermal and electrical isolation of gas sensing devices. The microstructure of the films is analysed as a function of the deposition conditions (laser fluence, oxygen pressure, target-substrate distance and substrate temperature). X-ray analysis shows that only a sharp peak that coincides with the corundum (116) reflection can be observed in all the films. But, when they are annealed at temperatures above 1,200 degree centigrade, a change in the crystalline structure of some films occurs. The stoichiometry and morphology of the films with and without thermal treatment are compared using environmental scanning electron microscopy (SEM) and EDAX analysis. (Author) 14 refs

  11. Preparation and characterization of chitosan/ZnAl2O4 films

    International Nuclear Information System (INIS)

    Araujo, P.M.A.G.; Santos, P.T.A.; Rodrigues, P.A.; Costa, A.C.F.M.; Araujo, E.M.

    2012-01-01

    Chitosan films have been explored for biomedical application, as the chitosan to be, low toxicity, abundant in nature, show affinity for dispersion loads and high mechanical strength. On the other hand, ZnAl 2 O 4 has energy gap of approximately 3.8 eV, which makes it useful for use as photoelectric device ultraviolet. Thus, this work has as objective to prepare films of quitosana/ZnAl 2 O 4 in proportions of 5:1, 5:2, 5:3, 5:4 and evaluate the structural, morphological and thermals characteristics. To this end, ZnAl2O4 first nanoparticles (NPs) was deagglomerated and 325 mesh sieve and added to chitosan diluted in 1% acetic acid, and dried at 60°C. After drying, a solution of 1M sodium hydroxide was added to obtain a film with neutral pH. The films were characterized by XRD, SEM and TG. For all proportions evaluated it was verified the presence of ZnAl 2 O)4 and chitosan phases. By micrographs, it was observed that there was formation of agglomerates of ZnAl 2 O 4 NPs both on the surface of the films, the encapsulated in chitosan. In all samples the ratio 5:4 showed the greatest consistency both in relation to the film surface of the nanoparticles in the chitosan matrix. TG/DTA curves of quitosana/ZnAl 2 O 4 film for all the samples showed that for the concentration of 5:1 to 5:3 occurred three mass loss while for concentration of 5:2 to 5:4 were only two stages decomposition. (author)

  12. Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

    Science.gov (United States)

    Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

    2016-06-15

    Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

  13. Large magnetoresistance in La-Ca-Mn-O films

    International Nuclear Information System (INIS)

    Chen, L.H.; Jin, S.; Tiefel, T.H.; Ramesh, R.; Schurig, D.

    1995-01-01

    A very large magnetoresistance value in excess of 10 6 % has been obtained at 110 K, H = 6 T in La-Ca-Mn-O thin films epitaxially grown on LaAlO 3 substrates by pulsed laser deposition. The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than ∼2,000 angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films

  14. Annealing effect on the structural, morphological and electrical properties of TiO2/ZnO bilayer thin films

    Science.gov (United States)

    Khan, M. I.; Imran, S.; Shahnawaz; Saleem, Muhammad; Ur Rehman, Saif

    2018-03-01

    The effect of annealing temperature on the structural, morphological and electrical properties of TiO2/ZnO (TZ) thin films has been observed. Bilayer thin films of TiO2/ZnO are deposited on FTO glass substrate by spray pyrolysis method. After deposition, these films are annealed at 573 K, 723 K and 873 K. XRD shows that TiO2 is present in anatase phase only and ZnO is present in hexagonal phase. No other phases of TiO2 and ZnO are present. Also, there is no evidence of other compounds like Zn-Ti etc. It also shows that the average grain size of TiO2/ZnO films is increased by increasing annealing temperature. AFM (Atomic force microscope) showed that the average roughness of TiO2/ZnO films is decreased at temperature 573-723 K and then increased at 873 K. The calculated average sheet resistivity of thin films annealed at 573 K, 723 K and 873 K is 152.28 × 102, 75.29 × 102 and 63.34 × 102 ohm-m respectively. This decrease in sheet resistivity might be due to the increment of electron concentration with increasing thickness and the temperature of thin films.

  15. Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-Ion Battery.

    Science.gov (United States)

    Laskar, Masihhur R; Jackson, David H K; Guan, Yingxin; Xu, Shenzhen; Fang, Shuyu; Dreibelbis, Mark; Mahanthappa, Mahesh K; Morgan, Dane; Hamers, Robert J; Kuech, Thomas F

    2016-04-27

    Metal oxide coatings can improve the electrochemical stability of cathodes and hence, their cycle-life in rechargeable batteries. However, such coatings often impose an additional electrical and ionic transport resistance to cathode surfaces leading to poor charge-discharge capacity at high C-rates. Here, a mixed oxide (Al2O3)1-x(Ga2O3)x alloy coating, prepared via atomic layer deposition (ALD), on Li[Ni0.5Mn0.3Co0.2]O2 (NMC) cathodes is developed that has increased electron conductivity and demonstrated an improved rate performance in comparison to uncoated NMC. A "co-pulsing" ALD technique was used which allows intimate and controlled ternary mixing of deposited film to obtain nanometer-thick mixed oxide coatings. Co-pulsing allows for independent control over film composition and thickness in contrast to separate sequential pulsing of the metal sources. (Al2O3)1-x(Ga2O3)x alloy coatings were demonstrated to improve the cycle life of the battery. Cycle tests show that increasing Al-content in alloy coatings increases capacity retention; whereas a mixture of compositions near (Al2O3)0.5(Ga2O3)0.5 was found to produce the optimal rate performance.

  16. Self-assembled Bi{sub 2}MoO{sub 6}/TiO{sub 2} nanofiber heterojunction film with enhanced photocatalytic activities

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hua [School of Chemical Engineering, Northwest University, Xi’an 710069 (China); Zhang, Tianxi [School of Physics, Northwest University, Xi’an 710069 (China); Pan, Chao; Pu, Chenchen; Hu, Yang [School of Chemical Engineering, Northwest University, Xi’an 710069 (China); Hu, Xiaoyun [School of Physics, Northwest University, Xi’an 710069 (China); Liu, Enzhou, E-mail: liuenzhou@nwu.edu.cn [School of Chemical Engineering, Northwest University, Xi’an 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, Xi’an 710069 (China)

    2017-01-01

    Highlights: • Self-assembled Bi{sub 2}MoO{sub 6}/TiO{sub 2} nanofiber film was synthesized. • TiO{sub 2} nanofiber film exhibits excellent visible light scattering property. • The scattering light from TiO{sub 2} overlaps with the absorption light of Bi{sub 2}MoO{sub 6}. • Bi{sub 2}MoO{sub 6}/TiO{sub 2} heterojunction photocatalysts show higher photocatalytic activity. - Abstract: TiO{sub 2} nanofiber film (TiO{sub 2} NFF) was successfully fabricated by an ethylene glycol-assisted hydrothermal method, and then self-assembled flake-like Bi{sub 2}MoO{sub 6} was grown on the surface of TiO{sub 2} nanofiber under alcohol thermal condition. The investigations indicate that the nanofiber structure of TiO{sub 2} films exhibits excellent visible light scattering property, the scattering light overlaps with the absorption band of Bi{sub 2}MoO{sub 6}, which can enhance the utility of incident light. The prepared Bi{sub 2}MoO{sub 6}/TiO{sub 2} composites show obviously enhanced photocatalytic activity for methylene blue (MB) degradation compared with pure TiO{sub 2} nanofiber under visible light irradiation (λ > 420 nm). The enhanced photocatalytic activity is primarily attributed to the synergistic effect of visible light absorption and effective electron-hole separation at the interfaces of the two semiconductors, which is confirmed by photoluminescence (PL) and electrochemical tests.

  17. Polythiophene thin films electrochemically deposited on sol-gel based TiO2 for photovoltaic applications

    International Nuclear Information System (INIS)

    Valaski, R.; Yamamoto, N.A.D.; Canestraro, C.D.; Micaroni, L.; Mello, R.M.Q.; Quirino, W.G.; Legani, C.; Achete, C.A.; Roman, L.S.; Cremona, M.

    2010-01-01

    In this work, the influence of titanium dioxide (TiO 2 ) thin films on the efficiency of organic photovoltaic devices based on electrochemically synthesized polythiophene (PT) was investigated. TiO 2 films were produced by sol-gel methods with controlled thickness. The best TiO 2 annealing condition was determined through the investigation of the temperature influence on the electron charge mobility and resistivity in a range between 723 K and 923 K. The PT films were produced by chronoamperometric method in a 3-electrode cell under a controlled atmosphere. High quality PT films were produced onto 40 nm thick TiO 2 layer previously deposited onto fluorine doped tin oxide (FTO) substrate. The morphology of PT films grown on both substrates and its strong influence on the device performance and PT minimum thickness were also investigated. The maximum external quantum efficiency (IPCE) reached was 9% under monochromatic irradiation (λ = 610 nm; 1 W/m 2 ) that is three orders of magnitude higher than that presented by PT-homolayer devices with similar PT thickness. In addition, the open-circuit voltage (V oc ) was about 700 mV and the short-circuit current density (J sc ) was 0.03 A/m 2 (λ = 610 nm; 7 W/m 2 ). However, as for the PT-homolayer also the TiO 2 /PT based devices are characterized by antibatic response when illuminated through FTO. Finally, the Fill Factor (FF) of these devices is low (25%), indicating that the series resistance (R s ), which is strongly dependent of the PT thickness, is too large. This large R s value is compensated by TiO 2 /PT interface morphology and by FTO/TiO 2 and TiO 2 /PT interface phenomena producing preferential paths in which the internal electrical field is higher, improving the device efficiency.

  18. Phase transformation synthesis of TiO2/CdS heterojunction film with high visible-light photoelectrochemical activity

    Science.gov (United States)

    Liu, Canjun; Yang, Yahui; Li, Jie; Chen, Shu

    2018-06-01

    CdS/TiO2 heterojunction film used as a photoanode has attracted much attention in the past few years due to its good visible light photocatalytic activity. However, CdS/TiO2 films prepared by conventional methods (successive ionic layer adsorption and reaction, chemical bath deposition and electrodeposition) show numerous grain boundaries in the CdS layer and an imperfect contact at the heterojunction interface. In this study, we designed a phase transformation method to fabricate CdS/TiO2 nanorod heterojunction films. The characterization results showed that the CdS layer with fewer grain boundaries was conformally coated on the TiO2 nanorod surface and the formation mechanism has been explained in this manuscript. Moreover, the prepared CdS/TiO2 films show a high photocatalytic activity and the photocurrent density is as high as 9.65 mA cm‑2 at 0.80 V versus RHE. It may be attributed to fewer grain boundaries and a compact heterojunction contact, which can effectively improve charge separation and transportation.

  19. Photocatalytic activity of galvanically synthesized nanostructure SnO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jana, Sumanta, E-mail: sumantajana85@gmail.com [Department of Chemistry, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India); Mitra, Bibhas Chandra [Department of Physics, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India); Bera, Pulakesh [Department of Chemistry, Panskura Banamali College, Purba Medinipur, Panskura 721152, WB (India); Sikdar, Moushumi [Department of Chemistry, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India); Mondal, Anup, E-mail: anupmondal2000@yahoo.co.in [Department of Chemistry, Bengal Engineering and Science University, Botanic Garden, Howrah 711103, WB (India)

    2014-07-25

    Graphical abstract: Nanostructured porous tin dioxide (SnO{sub 2}) thin films have been synthesized by simple and cost effective galvanic technique. The synthesized porous SnO{sub 2} thin films show excellent photocatalytic activity for degrading methyl orange (MO) dye under light irradiation. The porous morphological grain growth due to annealing is likely to play an active role for this degradation. - Highlights: • SnO{sub 2} thin films have been successfully synthesized by galvanic technique. • A drastic morphological change occurs after annealing as deposited SnO{sub 2} thin films. • Morphological advantage results enhanced photodegradation of dye. - Abstract: The study demonstrates an approach to synthesize nanostructure SnO{sub 2} thin films on TCO (transparent conducting oxide) coated glass substrates by galvanic technique. Aqueous solution of hydrated stannic chloride (SnCl{sub 4}⋅5H{sub 2}O) in potassium nitrate (KNO{sub 3}) solution was used as the working solution. The process involves no sophisticated reactor or toxic chemicals, and proceeds continuously under ambient condition; it provides an economic way of synthesizing nanostructure SnO{sub 2} semiconductor thin films. The influence of sintering temperature on crystalline structure, morphology, electrical and dielectric properties has been studied. A detail analysis of I−V, C−V and dielectrics for annealed SnO{sub 2} thin films have been carried out. The morphological advantage i.e. nanoporous flake like structure allows more efficient transport of reactant molecules to the active interfaces and results a strong photocatalytic activity for degrading methyl orange (MO) dye.

  20. Tuning the Phase and Microstructural Properties of TiO2 Films Through Pulsed Laser Deposition and Exploring Their Role as Buffer Layers for Conductive Films

    Science.gov (United States)

    Agarwal, S.; Haseman, M. S.; Leedy, K. D.; Winarski, D. J.; Saadatkia, P.; Doyle, E.; Zhang, L.; Dang, T.; Vasilyev, V. S.; Selim, F. A.

    2018-04-01

    Titanium oxide (TiO2) is a semiconducting oxide of increasing interest due to its chemical and thermal stability and broad applicability. In this study, thin films of TiO2 were deposited by pulsed laser deposition on sapphire and silicon substrates under various growth conditions, and characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), optical absorption spectroscopy and Hall-effect measurements. XRD patterns revealed that a sapphire substrate is more suitable for the formation of the rutile phase in TiO2, while a silicon substrate yields a pure anatase phase, even at high-temperature growth. AFM images showed that the rutile TiO2 films grown at 805°C on a sapphire substrate have a smoother surface than anatase films grown at 620°C. Optical absorption spectra confirmed the band gap energy of 3.08 eV for the rutile phase and 3.29 eV for the anatase phase. All the deposited films exhibited the usual high resistivity of TiO2; however, when employed as a buffer layer, anatase TiO2 deposited on sapphire significantly improves the conductivity of indium gallium zinc oxide thin films. The study illustrates how to control the formation of TiO2 phases and reveals another interesting application for TiO2 as a buffer layer for transparent conducting oxides.

  1. Growth of Fe2O3 thin films by atomic layer deposition

    International Nuclear Information System (INIS)

    Lie, M.; Fjellvag, H.; Kjekshus, A.

    2005-01-01

    Thin films of α-Fe 2 O 3 (α-Al 2 O 3 -type crystal structure) and γ-Fe 2 O 3 (defect-spinel-type crystal structure) have been grown by the atomic layer deposition (ALD) technique with Fe(thd) 3 (iron derivative of Hthd = 2,2,6,6-tetramethylheptane-3,5-dione) and ozone as precursors. It has been shown that an ALD window exists between 160 and 210 deg. C. The films have been characterized by various techniques and are shown to comprise (001)-oriented columns of α-Fe 2 O 3 with no in-plane orientation when grown on soda-lime-glass and Si(100) substrates. Good quality films have been made with thicknesses ranging from 10 to 130 nm. Films grown on α-Al 2 O 3 (001) and MgO(100) substrates have the α-Fe 2 O 3 and γ-Fe 2 O 3 crystal structure, respectively, and consist of highly oriented columns with in-plane orientations matching those of the substrates

  2. Photo-oxidative degradation of TiO{sub 2}/polypropylene films

    Energy Technology Data Exchange (ETDEWEB)

    García-Montelongo, X.L. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Ciudad Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico); Martínez-de la Cruz, A., E-mail: azael70@yahoo.com.mx [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Ciudad Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico); Vázquez-Rodríguez, S. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Ciudad Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico); Torres-Martínez, Leticia M. [Facultad de Ingeniería Civil, Universidad Autónoma de Nuevo León, Ciudad Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico)

    2014-03-01

    Graphical abstract: - Highlights: • Photo-oxidative degradation of polypropylene is accelerated by TiO{sub 2} incorporation. • Weight loss, FTIR, SEM and GPC shown high degree of degradation of polypropylene. • A mechanism of the photo-degradation of polypropylene by TiO{sub 2} is proposed. - Abstract: Photo-oxidative degradation of polypropylene films with TiO{sub 2} nanoparticles incorporated was studied in a chamber of weathering with Xenon lamps as irradiation source. TiO{sub 2} powder with crystalline structure of anatase was synthesized by thermal treatments at 400 and 500 °C starting from a precursor material obtained by sol–gel method. Composites of TiO{sub 2}/polypropylene were prepared with 0.1, 0.5 and 1.0 wt% of TiO{sub 2}. The mixture of components was performed using a twin screw extruder, the resulting material was pelletized by mechanical fragmenting and then hot-pressed in order to form polypropylene films with TiO{sub 2} dispersed homogeneously. Photo-oxidative degradation process was followed by visual inspection, weight loss of films, scanning electron microscopy (SEM), infrared spectroscopy with Fourier transformed (FTIR), and gel permeation chromatography (GPC)

  3. The effect of bulk/surface defects ratio change on the photocatalysis of TiO_2 nanosheet film

    International Nuclear Information System (INIS)

    Wang, Fangfang; Ge, Wenna; Shen, Tong; Ye, Bangjiao; Fu, Zhengping; Lu, Yalin

    2017-01-01

    Highlights: • The defect behaviors of TiO_2 nanosheet array films were studied by positron annihilation spectroscopy. • Different bulk/surface defect ratios were realized by annealing at different temperature. • It was concluded that bulk defects are mainly Ti"3"+ vacancy defects. • The separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio. - Abstract: The photocatalysis behavior of TiO_2 nanosheet array films was studied, in which the ratio of bulk/surface defects were adjusted by annealing at different temperature. Combining positron annihilation spectroscopy, EPR and XPS, we concluded that the bulk defects belonged to Ti"3"+ related vacancy defects. The results show that the separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio of TiO_2 nanosheet films, and in turn enhancing the photocatalysis behaviors.

  4. Preparation of anatase TiO2 thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Miyata, Toshihiro; Tsukada, Satoshi; Minami, Tadatsugu

    2006-01-01

    Anatase titanium dioxide (TiO 2 ) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO 2 pellets as the source material. Highly transparent TiO 2 thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O 2 ) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO 2 thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO 2 thin film with a resistivity of 2.6 x 10 -1 Ω cm was prepared at a substrate temperature of 400 deg. C without the introduction of O 2 gas

  5. Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Moriga, Toshihiro; Mikawa, Michio; Sakakibara, Yuji; Misaki, Yukinori; Murai, Kei-ichiro; Nakabayashi, Ichiro; Tominaga, Kikuo; Metson, James B.

    2005-01-01

    Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In 2 O 3 mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In 2 O 3 thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films

  6. Photo-induced wettability of TiO{sub 2} film with Au buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam [School of Physics, University of Hyderabad, Hyderabad-500046 (India); Madhurima, V., E-mail: madhurima.v@gmail.com [Department of Physics, Central University of Tamil Nadu, Thiruvarur-610004 (India)

    2014-04-24

    The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100° as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

  7. Synthesis and characterization of anatase-TiO2 thin films

    International Nuclear Information System (INIS)

    Sankapal, B.R.; Lux-Steiner, M.Ch.; Ennaoui, A.

    2005-01-01

    A new and effective method for the preparation of nanocrystalline TiO 2 (anatase) thin films is presented. This method is based on the use of peroxo-titanium complex as a single precursor. Post-annealing treatment is necessary to convert the deposited amorphous film into TiO 2 (anatase) phase. The films obtained are uniform, compact and free of pinholes. A wide range of techniques are used for characterization, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (EDAX) and UV-Vis-NIR spectrophotometer. Glass, indium-doped tin oxide (ITO) and quartz are used as substrates. TiO 2 (anatase) phase with (1 0 1) preferred orientation is obtained for the films. Byproduct (collected powder) consists of the same crystal structure. The optical measurement reveals the indirect bandgap of 3.2 eV

  8. Synthesis and characterization of anatase-TiO 2 thin films

    Science.gov (United States)

    Sankapal, B. R.; Lux-Steiner, M. Ch.; Ennaoui, A.

    2005-01-01

    A new and effective method for the preparation of nanocrystalline TiO 2 (anatase) thin films is presented. This method is based on the use of peroxo-titanium complex as a single precursor. Post-annealing treatment is necessary to convert the deposited amorphous film into TiO 2 (anatase) phase. The films obtained are uniform, compact and free of pinholes. A wide range of techniques are used for characterization, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (EDAX) and UV-Vis-NIR spectrophotometer. Glass, indium-doped tin oxide (ITO) and quartz are used as substrates. TiO 2 (anatase) phase with (1 0 1) preferred orientation is obtained for the films. Byproduct (collected powder) consists of the same crystal structure. The optical measurement reveals the indirect bandgap of 3.2 eV.

  9. Effect of metal ion dopants on photochemical properties of anatase TiO{sub 2} films synthesized by a modified sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Yuan Zhangfu [Multi-Phase Reaction Laboratory, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 10080 (China)]. E-mail: yuanzhf@home.ipe.ac.cn; Zhang Junling [Multi-Phase Reaction Laboratory, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 10080 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Li Bin [Multi-Phase Reaction Laboratory, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 10080 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Li Jianqiang [Multi-Phase Reaction Laboratory, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 10080 (China)

    2007-06-25

    Anatase TiO{sub 2} films were successfully synthesized by a modified sol-gel method wherein peroxo titanic acid solution was derived from TiCl{sub 4}/ethanol/water solution at room temperature. The as-prepared films were further surface-doped by photodeposited Fe{sub 2}O{sub 3} and Cr{sub 2}O{sub 3} to improve its physicochemical properties. The phase and structure of the films were investigated by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy. The physicochemical properties of the films were also measured. The results show that both hydrophilicity and photocatalytic activity of the films were remarkably improved by doping transition metal ion Fe{sup 3+}. In case of Cr{sup 3+} doped films, hydrophilicity was also significantly enhanced but photocatalytic activity for methyl orange under UV irradiation was still comparable with the undoped films.

  10. P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

    KAUST Repository

    Al-Jawhari, Hala A.

    2013-10-09

    P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

  11. Photocatalytic performance of Sn-doped and undoped TiO2 nanostructured thin films under UV and vis-lights

    International Nuclear Information System (INIS)

    Arpac, E.; Sayilkan, F.; Asiltuerk, M.; Tatar, P.; Kiraz, Nadir; Sayilkan, H.

    2007-01-01

    Sn-doped and undoped nano-TiO 2 particles have been synthesized by hydrotermal process without solvent at 200 deg. C in 1 h. Nanostructure-TiO 2 based thin films have been prepared on glass substrate by spin-coating technique. The structure, surface morphology and optical properties of the thin films and the particles have been investigated by element analysis and XRD, SEM, BET and UV-vis-NIR techniques. The photocatalytic performance of the films were tested for degradation of Malachite Green dye in solution under UV and vis-lights. The results showed that (a) hydrothermally synthesized nano-TiO 2 particles are fully anatase crystalline form and are easily dispersed in water, (b) the coated surfaces have nearly super-hydrophilic properties and (c) the doping of transition metal ion efficiently improved the photocatalytic performance of the TiO 2 thin film

  12. Hybrid AC EL structures with thin protective ZnO film

    International Nuclear Information System (INIS)

    Tsvetkova, E; Dikov, H; Kolentsov, K; Yourukova, L; Zhechev, D; Steflekova, V

    2008-01-01

    Alternating current hybrid electroluminescent Al/SnO 2 /ZnS: Cu/ZnO/Al structures with blue emission have been prepared. In these ZnO films are used as protective layers. The optical properties of different RF magnetron sputtered ZnO films have been studied. The voltage - brightness characteristics of AC EL structures with a ZnO protective film and conventional structures with a TiO 2 protective layer are compared. The investigation shows that the brightness of the structures with a ZnO protective film is higher. The improved characteristics of these new hybrid structures could be used in preparing various systems for representation of permanent or variable light information

  13. PLD prepared nanostructured Pt-CeO{sub 2} thin films containing ionic platinum

    Energy Technology Data Exchange (ETDEWEB)

    Vorokhta, M., E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Khalakhan, I.; Matolínová, I.; Nováková, J.; Haviar, S. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Lančok, J.; Novotný, M. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague, Czhech Republic (Czech Republic); Yoshikawa, H. [National Institute for Materials Science, Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Matolín, V. [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague 8 (Czech Republic)

    2017-02-28

    Highlights: • Nanostructured Pt-CeO{sub 2} thin catalyst films were grown on plasma etched and non-etched carbon substrates by pulsed laser deposition. • The surface composition of the nanostructured Pt-CeO{sub 2} films was investigated by surface analysis techniques. • The effect of film roughening was separated from the effect of platinum-ceria atomic interactions. - Abstract: The composition of nanostructured Pt-CeO{sub 2} films on graphite substrates prepared by pulsed laser deposition has been investigated by means of hard X-ray photoelectron spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy, and atomic force microscopy. The influence of morphology of the graphite substrates was investigated with respect to the relative concentrations of ionic and metallic Pt species in the films. It was found that the degree of Pt{sup 2+} enrichment is directly related to the surface morphology of graphite substrates. In particular, the deposition of Pt-CeO{sub 2} films on rough graphite substrate etched in oxygen plasma yielded nanostructured Pt-CeO{sub 2} catalyst films with high surface area and high Pt{sup 2+}/Pt{sup 0} ratio. The presented results demonstrate that PLD is a suitable method for the preparation of thin Pt-CeO{sub 2} catalyst films for fuel cell applications.

  14. Photoanode of Dye-Sensitized Solar Cells Based on a ZnO/TiO2 Composite Film

    Directory of Open Access Journals (Sweden)

    Lu-Ting Yan

    2012-01-01

    Full Text Available A photoanode of dye-sensitized solar cells based on a ZnO/TiO2 composite film was fabricated on a transparent conductive glass substrate using different techniques including electrophoretic deposition, screen printing, and colloidal spray coating. The ZnOs used in the composite film were ZnO tetrapods prepared via thermal evaporation and ZnO nanorods obtained via hydrothermal growth. The structural and morphological characterizations of the thin composite films were carried out using scanning electron microscope (SEM. The best power conversion was 1.87%, which corresponds to the laminated TiO2/ZnO/TiO2 structure prepared via screen printing.

  15. Cu and Cu2O films with semi-spherical particles grown by electrochemical deposition

    International Nuclear Information System (INIS)

    Zheng, Jin You; Jadhav, Abhijit P.; Song, Guang; Kim, Chang Woo; Kang, Young Soo

    2012-01-01

    Cu and Cu 2 O films can be prepared on indium-doped tin oxide glass substrates by simple electrodeposition in a solution containing 0.1 M Cu(NO 3 ) 2 and 3 M lactic acid at different pH values. At low pH (pH = 1.2), the uniform Cu films were obtained; when pH ≥ 7, the pure Cu 2 O films can be deposited. Especially, at pH = 11, the deposited Cu 2 O films exhibited cubic surface morphology exposing mainly {100} plane; in contrast, the films consisting of semi-spherical particles were obtained when the solution was being stirred for 2 weeks prior to use. The possible growth process and mechanism were comparatively discussed. - Highlights: ► Cu and Cu 2 O films were prepared by facile electrodeposition. ► Electrodeposition was preformed in electrolyte at different pH values. ► Dendritic Cu films were obtained at 1.2 pH with relatively high deposition potential. ► Semi-spherical Cu 2 O films were obtained with solution at 11 pH and stirred for 2 weeks. ► The possible growth mechanism of semi-spherical Cu 2 O films was discussed.

  16. Structural and optical properties of ZnO–SnO{sub 2} mixed thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Tharsika, T., E-mail: tharsika@siswa.um.edu.my; Haseeb, A.S.M.A., E-mail: haseeb@um.edu.my; Sabri, M.F.M., E-mail: faizul@um.edu.my

    2014-05-02

    Nanocrystalline ZnO–SnO{sub 2} mixed thin films were deposited by the spray pyrolysis technique at various substrate temperatures during deposition. The mixed films were prepared in the range of 20.9 at.% to 73.4 at.% by altering the Zn/(Sn + Zn) atomic ratio in the starting solution. Morphology, crystal structures, and optical properties of the films were characterized by field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and ultraviolet–visible and photoluminescence (PL) spectroscopy. XRD analysis reveals that the crystallinity of the Sn-rich mixed thin films increases with increasing substrate temperatures. FESEM images show that the grain size of mixed thin films is smaller compared to that of pure ZnO and SnO{sub 2} thin films. A drop in the thickness and optical bandgap of the film was observed for films fabricated at high temperatures, which coincided with the increased crystallinity of the films. The average optical transmission of mixed thin films increased from 70% to 95% within the visible range (400–800 nm) as the substrate temperature increases. Optical bandgap of the films was determined to be in the range of 3.21–3.96 eV. The blue shift in the PL spectra from the films was supported by the fact that grain size of the mixed thin films is much smaller than that of the pure ZnO and SnO{sub 2} thin films. Due to the improved transmission and reduced grain size, the ZnO–SnO{sub 2} mixed thin films can have potential use in photovoltaic and gas sensing applications. - Highlights: • ZnO–SnO{sub 2} mixed thin films were deposited on glass substrate by spray pyrolysis. • Crystallinity of the thin films increases with substrate temperature. • Grain size of the mixed thin films is smaller than that of the pure thin films. • Reduction of grain size depends on mixed atomic ratios of precursor solution. • Optical band gap of films could be engineered by changing substrate temperature.

  17. LaNiO3 buffer layers for high critical current density YBa2Cu3O7-δ and Tl2Ba2CaCu2O8-δ films

    International Nuclear Information System (INIS)

    Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

    1999-01-01

    We demonstrate high critical current density superconducting films of YBa 2 Cu 3 O 7-δ (YBCO) and Tl 2 Ba 2 CaCu 2 O 8-δ (Tl-2212) using LaNiO 3 (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J c (5 K, H=0) than films grown directly on a bare LaAlO 3 substrate. YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J c at all temperatures and fields compared to those grown on bare LaAlO 3 , correlating to both a-axis grain and nonsuperconducting phase formation. LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films in coated conductor applications. copyright 1999 American Institute of Physics

  18. LaNiO3 Buffer Layers for High Critical Current Density YBa2Cu3O7δ and Tl2Ba2CaCu2OFilms

    International Nuclear Information System (INIS)

    Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.-T.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

    1999-01-01

    We demonstrate high critical current density superconducting films of YBa 2 Cu 3 O 7-δ (YBCO) and Tl 2 Ba 2 CaCu 2 O 8-δ (Tl-2212) using LaNiO 3 (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J c (5K, H=0) than films grown directly on a bare LaAlO 3 substrate. It is noteworthy that YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J c at all temperatures and fields compared to those grown on bare LaAlO 3 , correlating to both a-axis grain and nonsuperconducting phase formation. With additional optimization, LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films, perhaps ideally suited for coated conductor applications

  19. Fabrication of highly conductive Ta-doped SnO{sub 2} polycrystalline films on glass using seed-layer technique by pulse laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nakao, Shoichiro, E-mail: tg-s-nakao@newkast.or.j [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Yamada, Naoomi [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hitosugi, Taro [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan)

    2010-03-31

    We discuss the fabrication of highly conductive Ta-doped SnO{sub 2} (Sn{sub 1-x}Ta{sub x}O{sub 2}; TTO) thin films on glass by pulse laser deposition. On the basis of the comparison of X-ray diffraction patterns and resistivity ({rho}) values between epitaxial films and polycrystalline films deposited on bare glass, we proposed the use of seed-layers for improving the conductivity of the TTO polycrystalline films. We investigated the use of rutile TiO{sub 2} and NbO{sub 2} as seed-layers; these are isostructural materials of SnO{sub 2,} which are expected to promote epitaxial-like growth of the TTO films. The films prepared on the 10-nm-thick seed-layers exhibited preferential growth of the TTO (110) plane. The TTO film with x = 0.05 on rutile TiO{sub 2} exhibited {rho} = 3.5 x 10{sup -4} {Omega} cm, which is similar to those of the epitaxial films grown on Al{sub 2}O{sub 3} (0001).

  20. Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

    International Nuclear Information System (INIS)

    Angelov, O; Stoyanova, D; Ivanova, I; Todorova, S

    2016-01-01

    The influence of Al 2 O 3 , Ag and Al 2 O 3 /Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al 2 O 3 and Ag targets or through sequential sputtering of Al 2 O 3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al 2 O 3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al 2 O 3 /Ag bilayer films (Al 2 O 3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida . A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida . (paper)

  1. Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

    Science.gov (United States)

    Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

    2018-02-01

    ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.

  2. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

    Science.gov (United States)

    Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Matsuda, Yasuhiro H; Pan, Tung-Ming

    2013-01-08

    In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.

  3. Thick Bi2Sr2CaCu2O8+δ films grown by liquid-phase epitaxy for Josephson THz applications

    Science.gov (United States)

    Simsek, Y.; Vlasko-Vlasov, V.; Koshelev, A. E.; Benseman, T.; Hao, Y.; Kesgin, I.; Claus, H.; Pearson, J.; Kwok, W.-K.; Welp, U.

    2018-01-01

    Theoretical and experimental studies of intrinsic Josephson junctions (IJJs) that naturally occur in high-T c superconducting Bi2Sr2CaCu2O8+δ (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation and sensing of electromagnetic radiation in the THz range. Here, we show that the THz-on-a-chip concept may be realized in liquid-phase epitaxial-grown (LPE) thick Bi-2212 films. We have grown μm thick Bi-2212 LPE films on MgO substrates. These films display excellent c-axis alignment and single crystal grains of about 650 × 150 μm2 in size. A branched current-voltage characteristic was clearly observed in c-axis transport, which is a clear signature of underdamped IJJs, and a prerequisite for THz-generation. We discuss LPE growth conditions allowing improvement of the structural quality and superconducting properties of Bi-2212 films for THz applications.

  4. Multi-modal TiO2-LaFeO3 composite films with high photocatalytic activity and hydrophilicity

    International Nuclear Information System (INIS)

    Gao Kun; Li Shudan

    2012-01-01

    In this paper, a series of multi-modal TiO 2 -LaFeO 3 composite films have been successfully synthesized through a two-step method. The resultant films were characterized in detail by several testing techniques, such as X-ray diffraction (XRD), ultraviolet-visible diffuse reflection spectrum (UV-vis DRS), photoluminescence spectrum (PL), surface photovoltage spectroscopy (SPS) and water contact angle measurements. The photocatalytic activity of different films was evaluated for degrading Methylene Blue (MB) aqueous solution. Hydrophilicity of the obtained TiO 2 -LaFeO 3 composite films was also investigated. The results show that TL film and LT film exhibited superior photocatalytic activity and hydrophilicity.

  5. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

    International Nuclear Information System (INIS)

    Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

    2013-01-01

    Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

  6. Superconductivity in Na{sub 1-x}CoO{sub 2}.yH{sub 2}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Sandra; Komissinkiy, Philipp; Alff, Lambert [Institute for Materials Science, TU Darmstadt (Germany); Fritsch, Ingo; Habermeier, Hanns-Ulrich [Max-Planck-Institute for Solid State Research, Stuttgart (Germany); Lemmens, Peter [Institute for Condensed Matter Physics, TU Braunschweig (Germany)

    2010-07-01

    Sodium cobaltate (Na{sub 1-x}CoO{sub 2}) is a novel material with thermoelectric behavior, charge and spin ordered states dependent on the sodium content in the composition. A superconducting phase was found in water intercalated sodium cobaltate (Na{sub 1-x}CoO{sub 2}.yH{sub 2}O) with x=0.65-0.7 and y=0.9-1.3. The pairing state is still under debate, but there are some indications for a spin-triplet or p-wave superconducting pairing state. First films of Na{sub 1-x}CoO{sub 2}.yH{sub 2}O with a superconducting transition temperature near 5 K have been successfully grown. Here we report on thin films of Na{sub 1-x}CoO{sub 2} grown by pulsed laser deposition technique. The deposition parameters, sodium deintercalation and water intercalation conditions are tuned in order to obtain the superconducting phase. The instability of this phase might be an indication for triplet superconductivity, which is known to be affected strongly by impurities and defects.This observation is in agreement with the fact that so far also no superconducting thin films of the most famous triplet superconductor Sr{sub 2}RuO{sub 4} have been reported.

  7. Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

  8. Effect of various SnO2 pH on ZnO/SnO2-composite film via immersion technique

    Science.gov (United States)

    Malek, M. F.; Mohamed, R.; Mamat, M. H.; Ismail, A. S.; Yusoff, M. M.; Rusop, M.

    2018-05-01

    ZnO/SnO2-composite film has been synthesized via immersion technique with various pH of SnO2. The pH of SnO2 were varied between 4.5 and 6.5. The optical measurements of the samples were carried out using Varian Cary 5000 UV-Vis spectrophotometer within the range from 350 nm to 800 nm at room temperature in air with a data interval of 1 nm. On the other hand, the optical photoluminescence properties were measured by a photoluminescence spectrometer (PL, model: Horiba Jobin Yvon - 79 DU420A-OE-325) using a He-Cd laser as the excitation source at 325 nm. These highly oriented ZnO/SnO2-composite film are potential for the creation of functional materials, such as the sensors, solar cells and etc.

  9. Resistive switching in TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin

    2011-10-26

    The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO{sub 2} layer are studied. Polycrystalline TiO{sub 2} thin films are deposited with atomic layer deposition and magnetron reactive sputtering processes, which are both physically and electrically characterized. The resistive switching cells are constructed in a metal/TiO{sub 2}/metal structure. Electroforming process initiate the cell from the beginning good insulator to a real memory cell to program the resistive states. Multilevel resistive bipolar switching controlled by current compliance is the common characteristic observed in these cells, which is potentially to be used as so called multi-bit memory cells to improve the memory capacity. With different top electrodes of Pt, Cu, Ag the resistive switching behaviors are studied. The switching behaviors are different depending on the top metal such as the minimum current compliance, the endurance of the programmed resistance states and the morphology change during the switching. The temperature dependence of different resistance states are investigated. A reduction of the activation energy and their possible conduction mechanisms is discussed on the base of the basic current conduction models. It is found that the resistance state transfers from semiconductor to metallic property with the reducing resistances. The calculated temperature coefficients of their metallic states on the Cu/TiO{sub 2}/Pt and Ag/TiO{sub 2}/Pt are very close to the reported literature data

  10. Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

    Science.gov (United States)

    Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

    2016-04-28

    Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

  11. The Analysis Of Structure For The Multi-Layered Of Ge/TiO2 Films Prepared By The Differential Prressure Co-Sputtering

    Directory of Open Access Journals (Sweden)

    Adachi Y.

    2015-06-01

    Full Text Available We tried to fabricate the Ge/TiO2 composite films with the differential pressure (pumping co-sputtering (DPCS apparatus in order to improve the optical properties. In the study, the micro structure of these thin films has been evaluated. TEM image revealed that the thin film was alternately layered with TiO2 and Ge, lattice fringes were observed both of Ge layer and TiO2 layer. There were portions that lattice fringe of Ge was disturbed near the interface of Ge and TiO2. X-ray photoelectron spectroscopy elucidated that there were few germanium oxides and a part with the thin film after annealed.

  12. Effect of Y2O3 Nanoparticles on Critical Current Density of YBa2Cu3O7-x Thin Films

    International Nuclear Information System (INIS)

    Tran, H. D.; Reddy, Sreekantha; Wie, C. H.; Kang, B.; Oh, Sang Jun; Lee, Sung Ik

    2009-01-01

    Introduction of proper impurity into YBa 2 Cu 3 O 7-x (YBCO) thin films is an effective way to enhance its flux-pinning properties. We investigate effect of Y 2 O 3 nanoparticles on the critical current density J c of the YBCO thin films. The Y 2 O 3 nanoparticles were created perpendicular to the film surface (parallel with the c-axis) either between YBCO and substrate or on top of YBCO, YBCO/Y 2 O 3 /LAO or Y 2 O 3 /YBCO/STO, by pulsed laser deposition. The deposition temperature of the YBCO films were varied (780 degree C and 800 degree C) to modify surface morphology of the YBCO films. Surface morphology characterization revealed that the lower deposition temperature of 780 degree C created nano-sized holes on the YBCO film surface which may behave as intrinsic pinning centers, while the higher deposition temperature produced much denser and smoother surface. J-c values of the YBCO films with Y 2 O 3 particles were either remained nearly the same or decreased for the samples in which YBCO is grown at 780 degree C. On the other hand, J-c values were enhanced for the samples in which YBCO is grown at higher temperature of 800 degree C. The difference in the effect of Y 2 O 3 can be explained by the fact that the higher deposition temperature of 800 degree C reduces intrinsic pinning centers and J c is enhanced by introduction of artificial pinning centers in the form of Y 2 O 3 nanoparticles.

  13. Structural, morphological, optical and photoluminescence properties of HfO2 thin films

    International Nuclear Information System (INIS)

    Ma, C.Y.; Wang, W.J.; Wang, J.; Miao, C.Y.; Li, S.L.; Zhang, Q.Y.

    2013-01-01

    Nanocrystalline monoclinic HfO 2 films with an average crystal size of 4.2–14.8 nm were sputter deposited under controlled temperatures and their structural characteristics and optical and photoluminescence properties have been evaluated. Structural investigations indicate that monoclinic HfO 2 films grown at higher temperatures above 400 °C are highly oriented along the (− 111) direction. The lattice expansion increases with diminishing HfO 2 crystalline size below 6.8 nm while maximum lattice expansion occurs with highly oriented monoclinic HfO 2 of crystalline size about 14.8 nm. The analysis of atomic force microscopy shows that the film growth at 600 °C can be attributed to the surface-diffusion-dominated growth. The intensity of the shoulderlike band that initiates at ∼ 5.7 eV and saturates at 5.94 eV shows continued increase with increasing crystalline size, which is intrinsic to nanocrystalline monoclinic HfO 2 films. Optical band gap varies in the range 5.40 ± 0.03–5.60 ± 0.03 eV and is slightly decreased with the increase in crystalline size. The luminescence band at 4.0 eV of HfO 2 films grown at room temperature can be ascribed to the vibronic transition of excited OH · radical while the emission at 3.2–3.3 eV for the films grown at all temperatures was attributed to the radiative recombination at impurity and/or defect centers. - Highlights: • Nanocrystalline monoclinic HfO 2 films were sputter deposited. • Structural, optical and photoluminescence properties were studied. • To analyze the scaling behavior using the power spectral density • Optical and photoluminescence properties strongly depend on film growth temperature

  14. Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment

    International Nuclear Information System (INIS)

    Ishizuka, S.; Kato, S.; Okamoto, Y.; Sakurai, T.; Akimoto, K.; Fujiwara, N.; Kobayashi, H.

    2003-01-01

    The effects of the passivation of defects in polycrystalline nitrogen-doped cuprous oxide (Cu 2 O) thin films with hydrogen or cyanide treatment were studied. In the photoluminescence (PL) measurements, although the emission was not observed before treatment, luminescence of Cu 2 O at around 680 nm was observed after each treatment. This improvement in the luminescence property may be due to the passivation of non-radiative recombination centers by H or CN. The hole carrier concentration increased from the order of 10 16 to 10 17 cm -3 with hydrogen or cyanide treatment. From these results, both the hydrogen and cyanide treatments were found to be very effective to passivate defects and improve the optical and electrical properties of polycrystalline Cu 2 O thin films. The thermal stability of the passivation effects by the cyanide treatment is, however, superior to that by the hydrogen treatment

  15. Effects of RGD immobilization on light-induced cell sheet detachment from TiO{sub 2} nanodots films

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Kui; Wang, Tiantian [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China); Yu, Mengliu [The Affiliated Stomatologic Hospital, Zhejiang University, Hangzhou 310003 (China); The First Affiliated Hospital of Medical College, Zhejiang University, Hangzhou, 310003 (China); Wan, Hongping [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China); Lin, Jun [The First Affiliated Hospital of Medical College, Zhejiang University, Hangzhou, 310003 (China); Weng, Wenjian, E-mail: wengwj@zju.edu.cn [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China); The Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Wang, Huiming, E-mail: hmwang1960@hotmail.com [The Affiliated Stomatologic Hospital, Zhejiang University, Hangzhou 310003 (China); The First Affiliated Hospital of Medical College, Zhejiang University, Hangzhou, 310003 (China)

    2016-06-01

    Light-induced cell detachment is reported to be a safe and effective cell sheet harvest method. In the present study, the effects of arginine–glycine–aspartic acid (RGD) immobilization on cell growth, cell sheet construction and cell harvest through light illumination are investigated. RGD was first immobilized on TiO{sub 2} nanodots films through simple physical adsorption, and then mouse pre-osteoblastic MC3T3-E1 cells were seeded on the films. It was found that RGD immobilization promoted cell adhesion and proliferation. It was also observed that cells cultured on RGD immobilized films showed relatively high level of pan-cadherin. Cells harvested with ultraviolet illumination (365 nm) showed good viability on both RGD immobilized and unmodified TiO{sub 2} nanodot films. Single cell detachment assay showed that cells detached more quickly on RGD immobilized TiO{sub 2} nanodot films. That could be ascribed to the RGD release after UV365 illumination. The current study demonstrated that RGD immobilization could effectively improve both the cellular responses and light-induced cell harvest. - Highlights: • RGD immobilization on TiO{sub 2} nanodots film favors light-induced cell sheet detachment. • Physically adsorbed RGD detaches from the film through ultraviolet illumination. • RGD detachment promotes cells and cell sheets detachment.

  16. Zirconium doped TiO{sub 2} thin films deposited by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Juma, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Department of Physics and Astronomy, Botswana International University of Science and Technology, Private bag 16, Palapye (Botswana); Oja Acik, I., E-mail: ilona.oja@ttu.ee [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Oluwabi, A.T.; Mere, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, V.; Danilson, M. [Chair of Semiconductor Materials Technology, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, M. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

    2016-11-30

    Highlights: • Mean crystallite size of TiO{sub 2}:Zr film decreases with increasing [Zr] in the solution. • Zr doping supresses the anatase to rutile transformation process in TiO{sub 2} films. • Band gap of TiO{sub 2}:Zr film is 3.4 eV irrespective of the annealing temperature. - Abstract: Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO{sub 2} thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO{sub 2} thin films were uniform and homogeneous showing much smaller grains than the undoped TiO{sub 2} films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO{sub 2} film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO{sub 4} phase started forming after annealing at 800 °C. The optical band gap for TiO{sub 2} decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO{sub 2}:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

  17. Chitosan/ZnAl_2O_4 films: structural evaluation and photoluminescent

    International Nuclear Information System (INIS)

    Araujo, P.M.A.G.; Costa, A.C.F.M.

    2014-01-01

    The photoluminescent materials have been the focus of intense research and applications in optics, electronics and biological areas. This work reports obtaining chitosan/ZnAl_2O_4 film in proportions of 1: 1, 1: 2, 1: 3, 1:4 to 1:5 by weight, and assess the structural properties of the films and photoluminescence. The samples were characterized by XRD, FTIR, emission and excitation. By XRD was found that all samples showed characteristic peaks of chitosan and ZnAl_2O_4. The FTIR spectra for all concentrations of Qs/NPs films exhibit characteristic bands of Qs and trend banding of ions ZnAl_2O_4. The emission and excitation spectra revealed the presence of a broadband processes associated with charge transfer to the Al"3"+ O"2"-, all samples showed good photoluminescent properties being that higher intensities of photoluminescence gave to the film concentration 1:4 being promising for photoelectronic applications. (author)

  18. Surface properties of UV irradiated PC–TiO{sub 2} nanocomposite film

    Energy Technology Data Exchange (ETDEWEB)

    Jaleh, B., E-mail: bkjaleh@yahoo.com; Shahbazi, N.

    2014-09-15

    Highlights: • Production of PC–TiO{sub 2} nanocomposite films. • Fully characterization of PC–TiO{sub 2} nanocomposite films. • Influence of UV irradiation on surface properties and hardness of PC–TiO{sub 2} nanocomposite film. - Abstract: In this work, polycarbonate–TiO{sub 2} nanocomposite films were prepared with two different percentages. The structure of samples were studied by X-ray diffraction. Thermal stability of the nanocomposites was studied by thermogravimetric analysis (TGA). The polycarbonate and polycarbonate–TiO{sub 2} nanocomposite films were exposed by UV light at different irradiation times. The effects of UV irradiation on the surface properties of samples have been studied by different characterization techniques, viz. scanning electron microscopy (SEM), FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle measurement and Vickers microhardness tester. Hydrophilicity and surface energy of UV treated samples varied depending on UV irradiation time. TGA curves showed that nanocomposite films have higher resistance to thermal degradation compared to polycarbonate. XPS analysis shows that surface of samples become more oxidized due to UV irradiation. For nanocomposite film, the smallest contact angle was observed in association with the longest UV irradiation time. The contact angle significantly decreased from 90° to 12° after 15 h of UV irradiation. It is observed that the hardness of the nanocomposite films increases after UV irradiation.

  19. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  20. LaNiO(3) Buffer Layers for High Critical Current Density YBa(2)Cu(3)O(7-delta) and Tl(2)Ba(2)CaCu(2)O(8-delta) Films

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.-T.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

    1999-08-24

    We demonstrate high critical current density superconducting films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8{minus}{delta}} (Tl-2212) using LaNiO{sub 3} (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J{sub c} (5K, H=0) than films grown directly on a bare LaAlO{sub 3} substrate. It is noteworthy that YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J{sub c} at all temperatures and fields compared to those grown on bare LaAlO{sub 3}, correlating to both a-axis grain and nonsuperconducting phase formation. With additional optimization, LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films, perhaps ideally suited for coated conductor applications.

  1. Effect of SiO2, PVA and glycerol concentrations on chemical and mechanical properties of alginate-based films.

    Science.gov (United States)

    Yang, Manli; Shi, Jinsheng; Xia, Yanzhi

    2018-02-01

    Sodium alginate (SA)/polyvinyl alcohol (PVA)/SiO 2 nanocomposite films were prepared by in situ polymerization through solution casting and solvent evaporation. The effect of different SA/PVA ratios, SiO 2 , and glycerol content on the mechanical properties, water content, water solubility, and water vapor permeability were studied. The nanocomposite films were characterized by Fourier transform infrared, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and thermal stability (thermogravimetric analysis/differential thermogravimetry) analyses. The nanocomposites showed the highest values of mechanical properties, such as SA/PVA ratio, SiO 2 , and glycerol content was 7:3, 6wt.%, and 0.25g/g SA, respectively. The tensile strength and elongation at break (E%) of the nanocomposites increased by 525.7% and 90.7%, respectively, compared with those of the pure alginate film. The Fourier transform infrared spectra showed a new SiOC band formed in the SA/PVA/SiO 2 nanocomposite film. The scanning electron microscopy image revealed good adhesion between SiO 2 and SA/PVA matrix. After the incorporation of PVA and SiO 2 , the water resistance of the SA/PVA/SiO 2 nanocomposite film was markedly improved. Transparency decreased with increasing PVA content but was enhanced by adding SiO 2 . Copyright © 2017. Published by Elsevier B.V.

  2. Synthesis and thin film growth of alkaline cobaltates Na{sub x}CoO{sub 2} and Li{sub x}CoO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Sandra

    2013-02-18

    In this study sol-gel synthesis was used to fabricate Na{sub x}CoO{sub 2}, LiNi{sub 1/2}Co{sub 1/2}O{sub 2} and LiNi{sub 1/3}Mn{sub 1/3}Co{sub 1/3}O{sub 2}. By using acetate precursors a lower process temperature was accessible, which has a positive effect on the sodium and lithium loss during synthesis. The lithium based powders were single phase and kept cation stoichiometry after sintering. A small grain size is favourable for battery applications. Sodium content was slightly reduced after temperature treatment compared to the initial cation mixture, due to the high volatility of Na. To fabricate thin films PLD was used for deposition. All films were deposited on SrTiO{sub 3} substrates. The growth mechanism of Na{sub x}CoO{sub 2} on SrTiO{sub 3} was investigated and an in-plane and out-of-plane relation between film an substrate was found. The films grow 15 and 45 rotated with respect to the ab-plane of the substrate and grow in c-axis direction out-of-plane. The sodium content and the crystallinity of the Na{sub x}CoO{sub 2} was investigated as a function of the post deposition treatment. A change of x between 0.38 and 0.84 can be achieved. The γ-phase was preserved in all films despite of the change of the sodium content. The in-situ variation of sodium stoichiometry, allows to tune the film properties in a wide range. This feature is an advantage compared to bulk Na{sub x}CoO{sub 2}, in which only certain stoichiometries can be stabilized. Fabrication of superconducting thin films Na{sub 0.33}CoO{sub 2}.1.3H{sub 2}O was challenging, since the superconducting phase is metastable and hardly to stabilize as a thin film. LiNi{sub 1/3}Mn{sub 1/3}Co{sub 1/3}O{sub 2} and LiNi{sub 1/2}Co{sub 1/2}O{sub 2} thin films were grown by PLD in (104)-orientation. These thin film materials are promising candidates as cathode materials for the development of thin film batteries.

  3. Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

    Science.gov (United States)

    Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

    2018-02-01

    To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

  4. TiO2 thin-films on polymer substrates and their photocatalytic activity

    International Nuclear Information System (INIS)

    Yang, Jae-Hun; Han, Yang-Su; Choy, Jin-Ho

    2006-01-01

    We have developed dip-coating process for TiO 2 -thin film on polymer substrates (acrylonitrile-butadiene-styrene polymer: ABS, polystyrene: PS). At first, a monodispersed and transparent TiO 2 nano-sol solution was prepared by the controlled hydrolysis of titanium iso-propoxide in the presence of acetylacetone and nitric acid catalyst at 80 deg. C. Powder X-ray diffraction patterns of the dried particles are indicative of crystalline TiO 2 with anatase-type structure. According to the XRD and transmission electron microscopy (TEM) studies, the mean particle size was estimated to be ca. 5 nm. The transparent thin films on ABS and PS substrates were fabricated by dip-coating process by changing the processing variables, such as the number of dip-coating and TiO 2 concentration in nano-sol solution. Scanning electron microscopic (SEM) analysis for the thin film samples reveals that the acetylacetone-modified TiO 2 nano-sol particles are effective for enhancing the interfacial adherence between films and polymeric substrates compared to the unmodified one. Photocatalytic degradation of methylene blue (MB) on the TiO 2 thin-films has also been systematically investigated

  5. Improved transparent-conducting properties in N{sub 2{sup -}} and H{sub 2{sup -}} annealed GaZnO thin films grown on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon [Dongguk University, Seoul (Korea, Republic of)

    2012-01-15

    The effects of N{sub 2{sup -}} and H{sub 2{sup -}} annealing on the transparent-conducting properties of Ga-doped ZnO (GaZnO) were examined. The as-grown GaZnO thin film, which was deposited on a soda-lime glass substrate by r.f. magnetron sputtering, exhibited moderate transparent-conducting properties: a resistivity of {approx}10{sup 0} {Omega}{center_dot}cm and an optical transmittance of {approx}86%. After annealing in N{sub 2} or H{sub 2}, the GaZnO samples showed great improvements in both the electrical and the optical properties. Particularly, in the H{sub 2}-annealed sample, a dramatic decrease in the resistivity (7 x 10{sup -4} {Omega}{center_dot}cm) with a considerable increase in the carrier concentration (4.22 x 10{sup 21} cm{sup -3}) was observed. This is attributed to both an increase in the number of Ga-O bonds and a reduction in the number of chemisorbed oxygen atoms though H{sub 2} annealing. The sample revealed an enhanced optical transmittance ({approx}91%), which comes from the Burstein-Moss effect. Namely, a blue-shift of the optical absorption edge, which results from the increased carrier concentration, was observed in the H{sub 2}-annealed sample. The results suggest that hydrogen annealing can help improve the transparent conducting properties of GaZnO via a modification of the electrochemical bonding structures.

  6. Fabrication and photoelectrochemical characteristics of In{sub 2}S{sub 3} nano-flower films on TiO{sub 2} nanorods arrays

    Energy Technology Data Exchange (ETDEWEB)

    Han, Minmin; Yu, Limin; Chen, Wenyuan [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100080 (China); Wang, Wenzhen, E-mail: wzhwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Jia, Junhong, E-mail: jhjia@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-04-30

    Graphical abstract: - Highlights: • In{sub 2}S{sub 3} nano-flower films are deposited on TiO{sub 2} nanorods by a hydrothermal method. • The roles of PSS and PEG on structure controlling of In{sub 2}S{sub 3} films are discussed. • The energy conversion efficiency of In{sub 2}S{sub 3}/TiO{sub 2} enhances thrice than TiO{sub 2}. - Abstract: The In{sub 2}S{sub 3} nano-flower films on TiO{sub 2}/FTO (Fluorine-doped tin oxide) substrates were synthesized via hydrothermal method and the photoelectrochemical performances of In{sub 2}S{sub 3}/TiO{sub 2} photoelectrodes were characterized. The roles of PSS (poly(sodium-p-styrenesul-fonate)) and PEG (polyethylene glycol) on the structure controlling of In{sub 2}S{sub 3} films were also discussed. The results show that the In{sub 2}S{sub 3} nano-flower films consisted of ultrathin nanoflakes with a thickness of 5 nm are successfully grew on the surface of TiO{sub 2} nanorod arrays. PEG could play a role as the morphology-directing agent by confining crystal growth in certain directions, while PSS could provide coordination sites with long chains and lead to the formation of spherical structure. The energy conversion efficiency of In{sub 2}S{sub 3} nano-flower/TiO{sub 2} photoelectrodes enhances thrice compared with that of bare TiO{sub 2} photoelectrode. This research presents further insight for improving the efficiency of semiconductors by using the suitable electron transfer channels, which may be promising for rational construction of solar conversion and storage devices.

  7. Preparation of TiO2/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

    Science.gov (United States)

    Shi, Chao; Li, Hongji; Li, Cuiping; Li, Mingji; Qu, Changqing; Yang, Baohe

    2015-12-01

    We report nanostructured TiO2/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO2/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO2 and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO2/BDD/Ta film was used as the working electrode with 0.1 M Na2SO4 as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm-2 at a scan rate of 5 mV s-1 for a B/C ratio of 0.1% w/w. Furthermore, the TiO2/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO2 layer and Ta nanoporous structures, and the synergies between them. These results show that TiO2/BDD/Ta films are promising as capacitor electrodes for special applications.

  8. Thermoluminescence in films of HfO2:Dy+3

    International Nuclear Information System (INIS)

    Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D.; Azorin, J.; Paredes, L.

    2014-08-01

    In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO 2 :Dy +3 ) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm 2 -s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm 2 ), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO 2 :Dy +3 could be used as radiation monitor in the region of the near UV. (Author)

  9. Luminescence of Y2O2S-Eu3+ and Ln2O2S-Tb3+ films grown by the method of photostimulated epitaxy

    International Nuclear Information System (INIS)

    Maksimovskij, S.N.; Sidorov, P.P.; Sluch, M.I.

    1990-01-01

    Study of luminescence of Y 2 O 2 S-Eu 3+ (1) and La 2 O 2 S-Tb 3+ (2) films, grown from vapor phase by photostimulated epitaxy method is carried out. Spectroscopic analysis data showed that films(1) spectra contain narrow lines, relating to C 3V symmetry centre, and wider lines, relating to C S symmetry centre. Films(2) possess intensive luminescence in green spectral region, but luminescence lines are wider due to higher number of defects. As to production of film luminescent screens the method is shown to be promising

  10. Crystalline and electronic structure of epitaxial γ-Al2O3 films

    International Nuclear Information System (INIS)

    Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

    2013-01-01

    Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

  11. A simple approach of fabricating thermoelectric γ-NaxCoO2 and superconductive Nax(H2O)yCoO2films using the sol-gel spin-coating method

    International Nuclear Information System (INIS)

    Liu, Chia-Jyi; Nayak, Pradipta K.; Chen, Yong-Zhi

    2009-01-01

    We report a simple approach of fabricating thermoelectric γ-Na x CoO 2 film with the c-axis orientation using the sol-gel spin-coating method. The inferred sodium content is x = 0.65 according to the correlation between the c-axis lattice constant and x. Temperature dependence of both the resistivity and thermopower resembles that of the γ-Na 0.68 CoO 2 film grown by the reactive solid-phase epitaxy. The fitted thermopower data show that the bandwidth of γ-Na x CoO 2 is found to be ∼ 101 meV, being close to the quasi-particle band (70-100 meV) derived from an angle-resolved photoemission study of γ-Na 0.7 CoO 2 . These results enable the possibility of low-cost fabrication of γ-Na x CoO 2 -based thermoelectric film devices. Furthermore, we have also topotactically transformed the of γ-Na x CoO 2 film to a superconducting Na x (H 2 O) y CoO 2film with T c,onset = 4.12 K.

  12. Magnetic and structural study of Cu-doped TiO2 thin films

    International Nuclear Information System (INIS)

    Torres, C.E. Rodriguez; Golmar, F.; Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H.; Duhalde, S.

    2007-01-01

    Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO 2 thin films were grown by pulsed laser deposition technique on LaAlO 3 substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO 2 . The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO 2

  13. Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

    Science.gov (United States)

    Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

    2017-12-01

    Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

  14. Preparation of TiO{sub 2}/boron-doped diamond/Ta multilayer films and use as electrode materials for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Chao, E-mail: sc_sq1988@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Cuiping, E-mail: licp226@126.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Qu, Changqing, E-mail: quchangqing@tjut.edu.cn [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Yang, Baohe, E-mail: bhyang207@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2015-12-01

    Highlights: • BDD film was deposited on Ta substrate by hot filament CVD method. • Ti layer was deposited on BDD film by radio frequency magnetron sputtering. • Nanostructured TiO{sub 2}/BDD/nanoporous Ta films were prepared. • The films exhibit good capacitance performance and excellent stability. - Abstract: We report nanostructured TiO{sub 2}/boron-doped diamond (BDD)/Ta multilayer films and their electrochemical performances as supercapacitor electrodes. The BDD films were grown on Ta substrates using electron-assisted hot filament chemical vapor deposition. Ti metal layers were deposited on the BDD surfaces by radio frequency magnetron sputtering, and nanostructured TiO{sub 2}/BDD/Ta thin films were prepared by electrochemical etching and thermal annealing. The successful formation of TiO{sub 2} and Ta layered nanostructures was demonstrated using scanning electron and transmission electron microscopies. The electrochemical responses of these electrodes were evaluated by examining their use as electrical double-layer capacitors, using cyclic voltammetry, and galvanostatic charge/discharge and impedance measurements. When the TiO{sub 2}/BDD/Ta film was used as the working electrode with 0.1 M Na{sub 2}SO{sub 4} as the electrolyte, the capacitor had a specific capacitance of 5.23 mF cm{sup −2} at a scan rate of 5 mV s{sup −1} for a B/C ratio of 0.1% w/w. Furthermore, the TiO{sub 2}/BDD/Ta film had improved electrochemical stability, with a retention of 89.3% after 500 cycles. This electrochemical behavior is attributed to the quality of the BDD, the surface roughness and electrocatalytic activities of the TiO{sub 2} layer and Ta nanoporous structures, and the synergies between them. These results show that TiO{sub 2}/BDD/Ta films are promising as capacitor electrodes for special applications.

  15. Structural colors of the SiO2/polyethyleneimine thin films on poly(ethylene terephthalate) substrates

    International Nuclear Information System (INIS)

    Jia, Yanrong; Zhang, Yun; Zhou, Qiubao; Fan, Qinguo; Shao, Jianzhong

    2014-01-01

    The SiO 2 /polyethyleneimine (PEI) films with structural colors on poly(ethylene terephthalate) (PET) substrates were fabricated by an electrostatic self-assembly method. The morphology of the films was characterized by Scanning Electron Microscopy. The results showed that there was no distinguishable multilayered structure found of SiO 2 /PEI films. The optical behaviors of the films were investigated through the color photos captured by a digital camera and the color measurement by a multi-angle spectrophotometer. Different hue and brightness were observed at various viewing angles. The structural colors were dependent on the SiO 2 particle size and the number of assembly cycles. The mechanism of the structural colors generated from the assembled films was elucidated. The morphological structures and the optical properties proved that the SiO 2 /PEI film fabricated on PET substrate formed a homogeneous inorganic/organic SiO 2 /PEI composite layer, and the structural colors were originated from single thin film interference. - Highlights: • SiO 2 /PEI thin films were electrostatic self-assembled on PET substrates. • The surface morphology and optical behavior of the film were investigated. • The structural colors varied with various SiO 2 particle sizes and assembly cycles. • Different hue and lightness of SiO 2 /PEI film were observed at various viewing angles. • Structural color of the SiO 2 /PEI film originated from single thin film interference

  16. Modification of oxide films by ion implantation: TiO2-films modified by Ti+ and O+ as example

    International Nuclear Information System (INIS)

    Schultze, J.W.; Elfenthal, L.; Leitner, K.; Meyer, O.

    1988-01-01

    Oxide films can be modified by ion implantation. Changes in the electrochemical properties of the films are due to the deposition profile of the implanted ion, ie doping and stoichiometric changes, as well as to the radiation damage. The latter is due to the formation of Frenkel defects and at high concentrations to a complete amorphization of the oxide film. TiOsub(x)-films with 1 + - and O + -ions into anodic oxide films on titanium. The electrode capacity shows always the behaviour of an n-type semiconductor with an almost constant flatband potential but a strong maximum donor concentration at about 3% Ti + concentration. Oxygen implantation, on the other hand, causes a small increase of donor concentration only at high concentration of O + . Electron transfer reactions show strong modifications of the electronic behaviour of the oxide film with a maximum again at 3% titanium. Photocurrent spectra prove the increasing amorphization and show interband states 2.6 eV above the VB or below the CB. During repassivation measurements at various potentials different defects formed by Ti + - and O + -implantation become mobile. A tentative model of the band structure is constructed which takes into account the interband states due to localised Ti + - and O + -ions. The modification of ion implanted oxide films is compared with the effects of other preparation techniques. (author)

  17. The Photocatalytic Activity and Compact Layer Characteristics of TiO2 Films Prepared Using Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    H. C. Chang

    2014-01-01

    Full Text Available TiO2 compact layers are used in dye-sensitized solar cells (DSSCs to prevent charge recombination between the electrolyte and the transparent conductive substrate (indium tin oxide, ITO; fluorine-doped tin oxide, FTO. Thin TiO2 compact layers are deposited onto ITO/glass by means of radio frequency (rf magnetron sputtering, using deposition parameters that ensure greater photocatalytic activity and increased DSSC conversion efficiency. The photoinduced decomposition of methylene blue (MB and the photoinduced hydrophilicity of the TiO2 thin films are also investigated. The photocatalytic performance characteristics for the deposition of TiO2 films are improved by using the Grey-Taguchi method. The average transmittance in the visible region exceeds 85% for all samples. The XRD patterns of the TiO2 films, for sol-gel with spin coating of porous TiO2/TiO2 compact/ITO/glass, show a good crystalline structure. In contrast, without the TiO2 compact layer (only porous TiO2, the peak intensity of the anatase (101 plane in the XRD patterns for the TiO2 film has a lower value, which demonstrates inferior crystalline quality. With a TiO2 compact layer to prevent charge recombination, a higher short-circuit current density is obtained. The DSSC with the FTO/glass and Pt counter electrode demonstrates the energy conversion efficiency increased.

  18. The influence of oxygen partial pressure on material properties of Eu{sup 3+}-doped Y{sub 2}O{sub 2}S thin film deposited by Pulsed Laser Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ali, A.G., E-mail: aliag@qwa.ufs.ac.za [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Dejene, B.F. [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba 9866 (South Africa); Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa)

    2016-01-01

    Eu{sup 3+}-doping has been of interest to improve the luminescent characteristics of thin-film phosphors. Y{sub 2}O{sub 2}S:Eu{sup 3+} films have been grown on Si (100) substrates by using a Pulsed Laser Deposition technique. The thin films grown under different oxygen deposition pressure conditions have been characterized using structural and luminescent measurements. The X-ray diffraction patterns showed mixed phases of cubic and hexagonal crystal structures. As the oxygen partial pressure increased, the crystallinity of the films improved. Further increase of the O{sub 2} pressure to 140 mtorr reduced the crystallinity of the film. Similarly, both scanning electron microscopy and Atomic Force Microscopy confirmed that an increase in O{sub 2} pressure affected the morphology of the films. The average band gap of the films calculated from diffuse reflectance spectra using the Kubelka–Munk function was about 4.75 eV. The photoluminescence measurements indicated red emission of Y{sub 2}O{sub 2}S:Eu{sup 3+} thin films with the most intense peak appearing at 619 nm, which is assigned to the {sup 5}D{sub 0}–{sup 7}F{sub 2} transition of Eu{sup 3+}. This most intense peak was totally quenched at higher O{sub 2} pressures. This phosphor may be a promising material for applications in the flat panel displays.

  19. Swift heavy ion irradiated SnO_2 thin film sensor for efficient detection of SO_2 gas

    International Nuclear Information System (INIS)

    Tyagi, Punit; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-01-01

    Highlights: • Response of Ni"7"+ ion irradiated (100 MeV) SnO_2 film have been performed. • Effect of irradiation on the structural and optical properties of SnO_2 film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni"7"+ ion irradiated (100 MeV) and non-irradiated SnO_2 thin film sensor prepared under same conditions have been performed towards SO_2 gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO_2 thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO_2 thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO_2 thin film by Ni"7"+ ions.

  20. SnO2 thin film synthesis for organic vapors sensing at ambient temperature

    Directory of Open Access Journals (Sweden)

    N.H. Touidjen

    2016-12-01

    Full Text Available The present work is a study of tin dioxide (SnO2 based thin sensitive layer dedicated to organic vapors detection at ambient temperature. SnO2 thin film was deposited by chemical spray pyrolysis technique. The glass substrate temperature was kept to 400 °C, using a starting solution of 0.1 M tin (II dichloride dihydrate (SnCl2, 2H2O. Films structural and morphological properties were characterized using X-ray diffraction (XRD, scanning electron microscopy (SEM and atomic force microscope (AFM respectively. Films optical characteristics were studied using UV-VIS spectrophotometer. XRD revealed the presence of pure SnO2 polycrystalline thin film with a tetragonal rutile structure. The SEM and AFM observations confirmed the granular morphology with presence of pores in the film surface. The prepared film was tested in various organic vapors (ethanol, methanol and acetone at ambient operating temperature (25 °C ± 2 °C. The obtained results suggested that SnO2 is more sensitive to ethanol vapor with a maximum sensitivity of 35% higher than to methanol and acetone vapors (1% and 3%. The realized SnO2 based sensor demonstrated fast response and recovery times as revealed by the values of 2 s to 3 s towards 47 ppm of ethanol vapor. Keywords: SnO2 thin film, Sensitivity, XRD, SEM, AFM, UV–visible

  1. Preparation and characterization of micro-grid modified In{sub 2}O{sub 3}:W films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Dongmei; Wang, Wenwen, E-mail: 08569@buaa.edu.cn; Zhang, Fan; Fu, Qiang; Pan, Jiaojiao

    2016-08-01

    Tungsten doped indium oxide (In{sub 2}O{sub 3}:W, IWO) thin films with IWO micro-grid covered surface were prepared at room temperature using techniques of radio frequency (RF) magnetron sputtering and polystyrene (PS) microsphere template. The composition, crystallization structures, surface morphologies, and optical and electrical properties of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, spectrophotometer from visible to near infrared (NIR) range and Hall effect measurement, respectively. Periodic micro-grid modified surface was obtained to improve light trapping properties. The effects of the PS micro-spheres diameters and the sputtering time on the surface morphology, transmittance in NIR range, diffuse reflection and conductive properties of the IWO films are investigated. Experiments show that surface modification of the IWO film with micro-grid under the optimized condition can improve the conductivity of the films by 15%, and the diffuse reflectance by 150%, with less than 8% decrease of the transmittance in the visible region. The study would be beneficial to the light trapping effect of solar cells using IWO films as transparent electrodes. - Highlights: • In{sub 2}O{sub 3}:W (IWO) films were obtained by reactive frequency magnetron sputtering. • IWO micro-grids were prepared on the surface of IWO films. • Influences of micro-grid size and sputtering time on IWO films were analyzed. • Both high conductivity and transparency are acquired in near-infrared region.

  2. Effect of Al-doped on physical properties of ZnO Thin films grown by spray pyrolysis on SnO2: F/glass

    Directory of Open Access Journals (Sweden)

    Castagné M.

    2012-06-01

    Full Text Available Transparent conducting thin films of aluminum-doped zinc oxide (ZnO:Al have been deposited on SnO2:F/glass by the chemical spray technique, starting from zinc acetate (CH3CO22Zn.2H2O and aluminum chloride AlCl3. The effect of changing the aluminum-to-zinc ratio y from 0 to 3 at.%, has been thoroughly investigated. It was found that the optical and electrical properties of Al doped ZnO films improved with the addition of aluminum in the spray solution until y=2%. At this Al doping percentage, the thin layers have a resistivity equal to 4.1 × 10−4 Ω.cm and a transmittance of about 90 % in the region [600-1000] nm. XRD patterns confirm that the films have polycristalline nature and a wurtzite (hexagonal structure which characterized with (100, (002 and (101 principal orientations. The undoped films have (002 as the preferred orientation but Al doped ones have (101 as the preferred orientation. Beyond y= 1%, peak intensities decrease considerably.

  3. Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

    International Nuclear Information System (INIS)

    Hiraiwa, Atsushi; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-01-01

    The Al 2 O 3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H 2 O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D 2 O instead of H 2 O in the ALD and found that the Al 2 O 3 film formed at a conventional temperature (100 °C) incorporates 50 times more CH 3 groups than the high-temperature film. This CH 3 is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H 2 O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H 2 O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D 2 O-oxidant ALD but found that the mass density and dielectric constant of D 2 O-grown Al 2 O 3 films are smaller than those of H 2 O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al 2 O 3 films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD

  4. Nanocrystalline Cobalt-doped SnO2 Thin Film: A Sensitive Cigarette Smoke Sensor

    Directory of Open Access Journals (Sweden)

    Patil Shriram B.

    2011-11-01

    Full Text Available This article discusses a sensitive cigarette smoke sensor based on Cobalt doped Tin oxide (Co-SnO2 thin films deposited on glass substrate by a conventional Spray Pyrolysis technique. The Co-SnO2 thin films have been characterized by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM and Energy Dispersive X-ray Spectroscopy (EDAX. The XRD spectrum shows polycrystalline nature of the film with a mixed phase comprising of SnO2 and Co3O4. The SEM image depicts uniform granular morphology covering total substrate surface. The compositional analysis derived using EDAX confirmed presence of Co in addition to Sn and O in the film. Cigarette smoke sensing characteristics of the Co-SnO2 thin film have been studied under atmospheric condition at different temperatures and smoke concentration levels. The sensing parameters such as sensitivity, response time and recovery time are observed to be temperature dependent, exhibiting better results at 330 oC.

  5. Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

    Science.gov (United States)

    You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

    2018-02-01

    In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

  6. Characteristics of RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous electrode for thin film microsupercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki [Core Technology Laboratory, Samsung SDI, 575 Shin-dong, Youngtong-Gu, Suwon, Gyeonggi-Do 442-391 (Korea, Republic of)]. E-mail: hanki1031.kim@samsung.com; Choi, Sun-Hee [Nano Materials Research Center, Korea Institute of Science and Technology (KIST), PO Box 131 Choengryang, Seoul 130-650 (Korea, Republic of); Yoon, Young Soo [Department of Advanced Fusion Technology (DAFT), Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701 (Korea, Republic of); Chang, Sung-Yong [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of); Ok, Young-Woo [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of); Seong, Tae-Yeon [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Kwangju 500-712 (Korea, Republic of)

    2005-03-22

    The characteristics of RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous electrode, grown by DC reactive sputtering, was investigated. X-ray diffraction (XRD), transmission electron microscopy (TEM), and transmission electron diffraction (TED) examination results showed that Sn and Ru metal cosputtered electrode in O{sub 2}/Ar ambient have RuO{sub 2}-SnO{sub 2} nanocrystallines in an amorphous oxide matrix. It is shown that the cyclic voltammorgram (CV) result of the RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous film in 0.5 M H{sub 2}SO{sub 4} liquid electrolyte is similar to a bulk-type supercapacitor behavior with a specific capacitance of 62.2 mF/cm{sup 2} {mu}m. This suggests that the RuO{sub 2}-SnO{sub 2} nanocrystalline-embedded amorphous film can be employed in hybrid all-solid state energy storage devises as an electrode of supercapacitor.

  7. Room-temperature synthesis and characterization of porous CeO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Dewei; Masuda, Yoshitake; Ohji, Tatsuki; Kato, Kazumi [National Institute of Advanced Industrial Science and Technology (AIST), Anagahora, Shimoshidami, Moriyama-ku, Nagoya (Japan)

    2012-01-15

    CeO{sub 2} thin films with hexagonal-shaped pores were successfully prepared by a facile electrodeposition at room temperature combined with an etching process. By using electrodeposited ZnO nanorods as a soft template, the morphology, and microstructure of the CeO{sub 2} could be controlled. TEM observation indicated that as-prepared CeO{sub 2} film is composed of nanocrystals with average size of several nanometers, while XPS analysis showed the coexistence of Ce{sup 3+} and Ce{sup 4+} in the film. The photoluminescence properties of CeO{sub 2} films were measured, which showed much higher sensitivity compared to bare substrate. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Characterization of thin CeO{sub 2} films electrochemically deposited on HOPG

    Energy Technology Data Exchange (ETDEWEB)

    Faisal, Firas [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Toghan, Arafat, E-mail: arafat.toghan@yahoo.com [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Chemistry Department, Faculty of Science, South Valley University, 83523 Qena (Egypt); Khalakhan, Ivan; Vorokhta, Mykhailo; Matolin, Vladimír [Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 747/2, 180 00 Prague 8 (Czech Republic); Libuda, Jörg [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Erlangen Catalysis Resource Center, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany)

    2015-09-30

    Graphical abstract: - Highlights: • Preparation of proton exchange membrane fuel cells catalyst using electrochemical thin film deposition. • Electrodeposition thin films of CeO{sub 2} on HOPG substrates. • The samples were characterized by in-situ AFM and ex-situ XPS. • XPS results reveal that the electrochemically deposited cerium oxide films are stoichiometric. • Exposing the films to ambient air, cracking structures are formed. - Abstract: Electrodeposition is widely used for industrial applications to deposit thin films, coatings, and adhesion layers. Herein, CeO{sub 2} thin films were deposited on a highly oriented pyrolytic graphite (HOPG) substrate by cathodic electrodeposition. The influence of the deposition parameters on the yield and on the film morphology is studied and discussed. Morphology and composition of the electrodeposited films were characterized by in-situ atomic force microscopy (AFM), scanning electron microscopy (SEM), Energy Dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). By AFM we show that the thickness of CeO{sub 2} films can be controlled via the Ce{sup 3+} concentration in solution and the deposition time. After exposing the films to ambient air, cracking structures are formed, which were analyzed by AFM in detail. The chemical composition of the deposits was analyzed by XPS indicating the formation of nearly stoichiometric CeO{sub 2}.

  9. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

    International Nuclear Information System (INIS)

    Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

    2013-01-01

    Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Improved critical current of YBaCuO thick-films and ceramics by the addition of Ag

    International Nuclear Information System (INIS)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D.

    1991-01-01

    In a series of papers we have discussed the importance of Ag for contacts and analyzed the resistivity, magnetization, critical current density and percolation properties of YBCO-Ag ceramics. This work has been followed by investigation of electrical and structural properties of thick-films containing Ag in their composition. Here we summarize the most important of our results: In YBCO-Ag ceramic compounds, silver fills the intergranular space (voids), improving the YBaCuO compactness and enhancing the critical current density. These properties are mostly enhanced at 10-20% wt% Ag. The reduction in normal-state resistivity can be described well by 3D percolation theory with a critical concentration of ≅20%. In thick films, prepared by spinning YBaCuO powders on a substrate, adding silver (in the form of Ag 2 O) to the powder mixture improves both T c and J c (by up to 50%), as well as resistivity and resistivity slope. The structural properties, like amount of secondary phases and micro-crack density, are also improved by the addition of Ag. (orig.)

  11. Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

    Science.gov (United States)

    Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

    2017-11-01

    The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

  12. YBa2Cu3O7 films prepared by aerosol MOCVD

    International Nuclear Information System (INIS)

    Weiss, F.; Froehlich, K.; Haase, R.; Labeau, M.; Selbmann, D.; Senateur, J.P.; Thomas, O.

    1993-01-01

    In the present study we report on properties of YBa 2 Cu 3 O 7 films prepared by aerosol MOCVD. We give a short description of the process and we focus on the superconducting and related properties of the films deposited on SrTiO 3 , LaAlO 3 and NdGaO 3 single crystalline substrates. (orig.)

  13. Characterization of Ag-doped vanadium oxide (AgxV2O5) thin film for cathode of thin film battery

    International Nuclear Information System (INIS)

    Hwang, H.S.; Oh, S.H.; Kim, H.S.; Cho, W.I.; Cho, B.W.; Lee, D.Y.

    2004-01-01

    The effect of silver co-sputtering on the characteristics of amorphous V 2 O 5 films, grown by dc reactive sputtering, is investigated. The co-sputtering process influences the growth mechanism as well as the characteristics of the V 2 O 5 films. X-ray diffraction (XRD), Inductively coupled plasma-atomic emission spectrometry (ICP-AES), field emission-scanning electron microscopy (FE-SEM), Fourier transform infrared spectrometry (FT-IR) and X-ray photoelectron spectrometry (XPS) results indicate that the microstructure of the V 2 O 5 films is affected by the rf power of the co-sputtered silver. In addition, an all-solid-state thin film battery with full cell structure of Li/LiPON/Ag x V 2 O 5 /Pt has been fabricated. It is found that the silver co-sputtered V 2 O 5 cathode film exhibits better cycle performance than an undoped one

  14. Magnetism in spin-coated pristine TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hassini, Awatef [IUT de Blois, 3 place Jean Jaures, C.S. 2903, 41029 Blois (France); Sakai, Joe [Laboratoire LEMA, UMR 6157 CNRS/CEA, Universite Francois Rabelais, Parc de Grandmont, 37200 Tours (France); Lopez, Josep Santiso [Institut de Ciencia de Materials de Barcelona, CSIC, Campus UAB, Bellaterra 08193 (Spain); Nguyen Hoa Hong [Laboratoire LEMA, UMR 6157 CNRS/CEA, Universite Francois Rabelais, Parc de Grandmont, 37200 Tours (France)], E-mail: nguyen.hoahong@univ-tours.fr

    2008-04-28

    Spin coated pristine TiO{sub 2} thin films show magnetic behaviors that are similar to those of pulsed laser ablated TiO{sub 2} thin films that were reported previously. It seems that in this kind of material, ferromagnetism (FM) is indeed intrinsic, and it can be achieved by various deposition techniques. The fact that oxygen annealing degrades the magnetic moment implies that the observed magnetism is likely due to defects or/and oxygen vacancies. Moreover, thick films that were deposited under the same growth conditions have the magnetic ordering degraded enormously. It is found that as for FM in undoped TiO{sub 2} films made by the chemical solution deposition, not only do defects/oxygen vacancies play a role, but also the confinement effects seem to be important.

  15. Cellulose Acetate/N-TiO2 Biocomposite Flexible Films with Enhanced Solar Photochromic Properties

    Science.gov (United States)

    Radhika, T.; Anju, K. R.; Silpa, M. S.; Ramalingam, R. Jothi; Al-Lohedan, Hamad A.

    2017-07-01

    Flexible cellulose acetate/N-TiO2 nanocomposite films containing various concentrations of nanosized N-TiO2 and an intelligent methylene blue ink have been prepared by solution casting. The hydrothermally prepared nitrogen-doped titania (N-TiO2) and the films were characterized in detail. The photochromic properties of the prepared films were investigated under ultraviolet (UV), visible light, and simulated solar irradiation by UV-Vis spectrophotometry. Upon irradiation, the films exhibited rapid photochromic response that was reversible at room temperature. Films with higher content of nano N-TiO2 showed enhanced decoloration/recoloration under all irradiation conditions, with fast decoloration/recoloration under simulated solar irradiation. These results suggest that the amount of nano N-TiO2 in the composite, the concentration of methylene blue, and the solvent greatly influence the photochromic properties of the films. Such flexible and transparent cellulose acetate/N-TiO2 films with enhanced decoloration/recoloration properties under solar irradiation are promising smart materials for use in photoreversible printed electronics applications.

  16. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  17. Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

    Science.gov (United States)

    Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

    2016-01-01

    Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

  18. Solution processing of YBa2Cu3O7-x thin films

    International Nuclear Information System (INIS)

    Singhal, A.; Paranthaman, M.; Specht, E.D.; Hunt, R.D.; Beach, D.B.; Martin, P.M.; Lee, D.F.

    1997-12-01

    The aim of this work was to develop a non-vacuum chemical deposition technique for YBa 2 Cu 3 O 7-x (YBCO) coated conductors on rolling-assisted biaxially textured substrates (RABiTS). The authors have chosen the metal-organic decomposition (MOD) and sol-gel precursor routes to grow textured YBCO films. In the MOD process, yttrium 2-ethylhexonate, barium neodecanoate, copper 2-ethylhexonate and toluene were used as the starting reagents. YBCO films processed by the MOD method on SrTiO 3 (100) single crystal substrates were consisted of c and a-axis oriented materials. These films also contained some amount of the random phase. The c and a-axis oriented materials were epitaxial on SrTiO 3 substrates. Films have a T c,onset of 89K and the best superconducting transition temperature of 63K. Films pyrolyzed at 525 C and subsequently annealed at 780 C in a p(O 2 ) of 3.5 x 10 -4 atm contained YBCO phase predominantly in a-axis orientation. In the sol-gel route, yttrium-isopropoxide, barium metal, copper methoxide and 2-methoxyethanol were used as the starting reagents. Sol-gel YBCO films on SrTiO 3 substrates were epitaxial and c-axis oriented

  19. Study of Optical Humidity Sensing Properties of Sol-Gel Processed TiO2 and MgO Films

    Directory of Open Access Journals (Sweden)

    B. C. Yadav

    2007-04-01

    Full Text Available Paper reports a comparative study of humidity sensing properties of TiO2 and MgO films fabricated by Sol-gel technique using optical method. One sensing element of the optical humidity sensor presented here consists of rutile structured two-layered TiO2 thin film deposited on the base of an isosceles glass prism. The other sensing element consists of a film of MgO deposited by same technique on base of the prism. Light from He-Ne laser enters prism from one of refracting faces of the prism and gets reflected from the glass-film interface, before emerging out from its other isosceles face. This emergent beam is allowed to pass through an optical fiber. Light coming out from the optical fiber is measured with an optical power meter. Variations in the intensity of light caused by changes in humidity lying in the range 5%RH to 95%RH have been recorded. MgO film shows better sensitivity than TiO2 film.

  20. Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies

    International Nuclear Information System (INIS)

    Sakhare, R.D.; Khuspe, G.D.; Navale, S.T.; Mulik, R.N.; Chougule, M.A.; Pawar, R.C.; Lee, C.S.; Sen, Shashwati; Patil, V.B.

    2013-01-01

    Highlights: ► Novel chemical route of synthesis of SnO 2 films. ► Physical properties SnO 2 are influenced by process temperature. ► The room temperature electrical conductivity of SnO 2 is of 10 −7 –10 −5 (Ω cm) −1 . ► SnO 2 exhibit high absorption coefficient (10 4 cm −1 ). -- Abstract: Sol–gel spin coating method has been successfully employed for preparation of nanocrystalline tin oxide (SnO 2 ) thin films. The effect of processing temperature on the structure, morphology, electrical conductivity, thermoelectric power and band gap was studied using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction pattern, atomic force microscopy, two probe technique and UV–visible spectroscopy. X-ray diffraction (XRD) analysis showed that SnO 2 films are crystallized in the tetragonal phase and present a random orientation. Field emission scanning electron microscopy (FESEM) analysis revealed that surface morphology of the tin oxide film consists nanocrystalline grains with uniform coverage of the substrate surface. Transmission electron microscopy (TEM) of SnO 2 film showed nanocrystals having diameter ranging from 5 to 10 nm. Selected area electron diffraction (SAED) pattern confirms tetragonal phase evolution of SnO 2 . Atomic force microscopy (AFM) analysis showed surface morphology of SnO 2 film is smooth. The dc electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10 −7 to 10 −5 (Ω cm) −1 as processing temperature increased from 400 to 700 °C. Thermo power measurement confirms n-type conduction. The band gap energy of SnO 2 film decreased from 3.88 to 3.60 eV as processing temperature increased from 400 to 700 °C

  1. Substrate decoration for improvement of current-carrying capabilities of YBa2Cu3Ox thin films

    DEFF Research Database (Denmark)

    Khoryushin, Alexey; Mozhaev, Peter; Mozhaeva, Julia

    2013-01-01

    The effects of substrate decoration with yttria and Y:ZrO2 on the structural and electrical properties of the YBa2Cu3Ox (YBCO) thin films are studied. The films were deposited on (LaAlO3)3–(Sr2AlTaO8)7 substrates by pulsed laser deposition. Two different structures of decoration layer were applie...

  2. Improved interface growth and enhanced flux pinning in YBCO films deposited on an advanced IBAD-MgO based template

    Science.gov (United States)

    Khan, M. Z.; Zhao, Y.; Wu, X.; Malmivirta, M.; Huhtinen, H.; Paturi, P.

    2018-02-01

    The growth mechanism is studied from the flux pinning point of view in small-scale YBa2Cu3O6+x (YBCO) thin films deposited on a polycrystalline hastelloy with advanced IBAD-MgO based buffer layer architecture. When compared the situation with YBCO films grown on single crystal substrates, the most critical issues that affect the suitable defect formation and thus the optimal vortex pinning landscape, have been studied as a function of the growth temperature and the film thickness evolution. We can conclude that the best critical current property in a wide applied magnetic field range is observed in films grown at relatively low temperature and having intermediate thickness. These phenomena are linked to the combination of the improved interface growth, to the film thickness related crystalline relaxation and to the formation of linear array of edge dislocations that forms the low-angle grain boundaries through the entire film thickness and thus improve the vortex pinning properties. Hence, the optimized buffer layer structure proved to be particularly suitable for new coated conductor solutions.

  3. Preparation of anatase TiO{sub 2} thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Miyata, Toshihiro [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)]. E-mail: tmiyata@neptune.kanazawa-it.ac.jp; Tsukada, Satoshi [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan); Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2006-02-01

    Anatase titanium dioxide (TiO{sub 2}) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO{sub 2} pellets as the source material. Highly transparent TiO{sub 2} thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O{sub 2}) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO{sub 2} thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO{sub 2} thin film with a resistivity of 2.6 x 10{sup -1} {omega} cm was prepared at a substrate temperature of 400 deg. C without the introduction of O{sub 2} gas.

  4. Sol-Gel TiO2 thin films sensitized with the mulberry pigment cyanidin

    Directory of Open Access Journals (Sweden)

    Emerson Henrique de Faria

    2007-12-01

    Full Text Available TiO2 films have various applications, among them solar cells and photodegradation of pollutants. In this study, we investigated TiO2 films functionalized with the organic dye cyanidin extracted from black mulberry (Morus nigra. The TiO2 was functionalized by the sol-gel method and the film was deposited on glass substrates by dip-coating. Our aim was to investigate the interaction between the semiconductor and the dye, as well as the influence of the velocity and number of deposits on the characteristics of the film. Using ultraviolet-visible spectroscopy, we observed a shift from the maximum absorption band at 545 nm for the dye’s ethanol solution to 595 nm for the film, indicating interaction of the cyanidin with the TiO2. The absorption spectra in the infrared region of the functionalized TiO2 particles showed bands characteristic of the oxide and indicated their interaction with the dye. Using profilometry and m-line techniques, we found that the films presented thicknesses in the order of 100 nm. A SEM analysis confirmed the high density of the films.

  5. Antimicrobial Activity of TiO2 Nanoparticle-Coated Film for Potential Food Packaging Applications

    Directory of Open Access Journals (Sweden)

    Siti Hajar Othman

    2014-01-01

    Full Text Available Recent uses of titanium dioxide (TiO2 have involved various applications which include the food industry. This study aims to develop TiO2 nanoparticle-coated film for potential food packaging applications due to the photocatalytic antimicrobial property of TiO2. The TiO2 nanoparticles with varying concentrations (0–0.11 g/ 100 mL organic solvent were coated on food packaging film, particularly low density polyethylene (LDPE film. The antimicrobial activity of the films was investigated by their capability to inactivate Escherichia coli (E. coli in an actual food packaging application test under various conditions, including types of light (fluorescent and ultraviolet (UV and the length of time the film was exposed to light (one–three days. The antimicrobial activity of the TiO2 nanoparticle-coated films exposed under both types of lighting was found to increase with an increase in the TiO2 nanoparticle concentration and the light exposure time. It was also found that the antimicrobial activity of the films exposed under UV light was higher than that under fluorescent light. The developed film has the potential to be used as a food packaging film that can extend the shelf life, maintain the quality, and assure the safety of food.

  6. A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

    International Nuclear Information System (INIS)

    Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

    2012-01-01

    Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

  7. Preparation and characterization of layer-by-layer self-assembled polyelectrolyte multilayer films doped with surface-capped SiO2 nanoparticles.

    Science.gov (United States)

    Yang, Guangbin; Ma, Hongxia; Yu, Laigui; Zhang, Pingyu

    2009-05-15

    SiO(2) nanoparticles capped with gamma-aminopropyltrimethoxysilane were doped into polyelectrolyte (poly(allylamine hydrochloride), PAH, and poly(acrylic acid), PAA) multilayer films via spin-assisted layer-by-layer self-assembly. The resulting as-prepared multilayer films were heated at a proper temperature to generate cross-linked composite films with increased adhesion to substrates. The tribological behavior of the multilayer films was evaluated on a microtribometer. It was found that SiO(2)-doped composite films had better wear resistance than pure polyelectrolyte multilayers, possibly because doped SiO(2) nanoparticles were capable of enhancing load-carrying capacity and had "miniature ball bearings" effect. Moreover, heat-treatment had significant effect on the morphology of the composite films. Namely, heat-treated (SiO(2)/PAA)(9) film had a larger roughness than the as-prepared one, due to heat-treatment-induced agglomeration of SiO(2) nanoparticles and initiation of defects. However, heat-treated (PAH/PAA)(3)/(SiO(2)/PAA)(3)(PAH/PAA)(3) film had greatly reduced roughness than the as-prepared one, and it showed considerably improved wear resistance as well. This could be closely related to the "sandwich-like" structure of the composite multilayer film. Namely, the outermost strata of composite multilayer film were able to eliminate defects associated with the middle strata, allowing nanoparticles therein to maintain strength and robustness while keeping soft and fluid-like exposed surface. And the inner strata were well anchored to substrate and acted as an initial "bed" for SiO(2) nanoparticles to be inhabited, resulting in good antiwear ability.

  8. Luminescent properties in films of ZrO2: Dy

    International Nuclear Information System (INIS)

    Martinez, R. C.; Guzman, J.; Rivera, T.; Ceron, P.; Montes, E.; Guzman, D.; Garcia H, M.; Falcony, C.; Azorin, J.

    2014-08-01

    In this work the luminescent characterization of zirconium oxide (ZrO 2 ) films impure with dysprosium (Dy +3 ) is reported, obtained by means of the ultrasonics spray pyrolysis technique. The films were deposited on glass substrates (Corning), in a temperatures interval of 400 to 550 grades C, using as precursor elements Zirconium oxide chloride octahydrate (ZrOCl 2 ·8H 2 O) and Dysprosium tri-chloride (DyCl 3 ), dissolved in deionized water, varying the concentration of the contaminated from the 1 to 20 atomic % with relationship to the zirconium in solution. The luminescent characterization was analyzed by means of photoluminescence and thermoluminescence. The photoluminescence results showed a spectrum with three maxima which correspond to the electronic transitions 4 F 9/2 - 6 H 15/2 , 4 F 9/2 - 6 H 13/2 and 4 F 9/2 - 6 H 11/2 characteristics of the Dy 3+ ion. The thermoluminescence (Tl) response when being exposed to a monochrome UV beam in 240 nm showed a wide curve that exhibits a maxim centered in 200 grades C. The Tl response of ZrO 2 :Dy in function of the dose was shown lineal in the interval of 24 mJ/cm 2 to 432 mJ/cm 2 . A study of the repeatability and dissipation of the ZrO 2 :Dy Tl response is included. Considering the shown previous results we can conclude that the ZrO 2 in film form obtained by spray pyrolysis has luminescent properties in 240 nm. (Author)

  9. CO2 Plasma-Treated TiO2 Film as an Effective Electron Transport Layer for High-Performance Planar Perovskite Solar Cells.

    Science.gov (United States)

    Wang, Kang; Zhao, Wenjing; Liu, Jia; Niu, Jinzhi; Liu, Yucheng; Ren, Xiaodong; Feng, Jiangshan; Liu, Zhike; Sun, Jie; Wang, Dapeng; Liu, Shengzhong Frank

    2017-10-04

    Perovskite solar cells (PSCs) have received great attention because of their excellent photovoltaic properties especially for the comparable efficiency to silicon solar cells. The electron transport layer (ETL) is regarded as a crucial medium in transporting electrons and blocking holes for PSCs. In this study, CO 2 plasma generated by plasma-enhanced chemical vapor deposition (PECVD) was introduced to modify the TiO 2 ETL. The results indicated that the CO 2 plasma-treated compact TiO 2 layer exhibited better surface hydrophilicity, higher conductivity, and lower bulk defect state density in comparison with the pristine TiO 2 film. The quality of the stoichiometric TiO 2 structure was improved, and the concentration of oxygen-deficiency-induced defect sites was reduced significantly after CO 2 plasma treatment for 90 s. The PSCs with the TiO 2 film treated by CO 2 plasma for 90 s exhibited simultaneously improved short-circuit current (J SC ) and fill factor. As a result, the PSC-based TiO 2 ETL with CO 2 plasma treatment affords a power conversion efficiency of 15.39%, outperforming that based on pristine TiO 2 (13.54%). These results indicate that the plasma treatment by the PECVD method is an effective approach to modify the ETL for high-performance planar PSCs.

  10. Nano structured TiO2 thin films by polymeric precursor method

    International Nuclear Information System (INIS)

    Stroppa, Daniel Grando; Giraldi, Tania Regina; Leite, Edson Roberto; Varela, Jose Arana; Longo, Elson

    2008-01-01

    This work focuses in optimizing setup for obtaining TiO 2 thin films by polymeric precursor route due to its advantages on stoichiometric and morphological control. Precursor stoichiometry, synthesis pH, solids concentration and rotation speed at deposition were optimized evaluating thin films morphology and thickness. Thermogravimetry and NMR were applied for precursor's characterization and AFM, XRD and ellipsometry for thin films evaluation. Results showed successful attainment of homogeneous nanocrystalline anatase TiO 2 thin films with outstanding control over morphological characteristics, mean grain size of 17 nm, packing densities between 57 and 75%, estimated surface areas of 90 m 2 /g and monolayers thickness within 20 and 128 nm. (author)

  11. A comparative study on omnidirectional anti-reflection SiO2 nanostructure films coating by glancing angle deposition

    Science.gov (United States)

    Prachachet, R.; Samransuksamer, B.; Horprathum, M.; Eiamchai, P.; Limwichean, S.; Chananonnawathorn, C.; Lertvanithphol, T.; Muthitamongkol, P.; Boonruang, S.; Buranasiri, P.

    2018-02-01

    Fabricated omnidirectional anti-reflection nanostructure films as a one of the promising alternative solar cell applications have attracted enormous scientific and industrial research benefits to their broadband, effective over a wide range of incident angles, lithography-free and high-throughput process. Recently, the nanostructure SiO2 film was the most inclusive study on anti-reflection with omnidirectional and broadband characteristics. In this work, the three-dimensional silicon dioxide (SiO2) nanostructured thin film with different morphologies including vertical align, slant, spiral and thin films were fabricated by electron beam evaporation with glancing angle deposition (GLAD) on the glass slide and silicon wafer substrate. The morphological of the prepared samples were characterized by field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM). The transmission, omnidirectional and birefringence property of the nanostructure SiO2 films were investigated by UV-Vis-NIR spectrophotometer and variable angle spectroscopic ellipsometer (VASE). The spectrophotometer measurement was performed at normal incident angle and a full spectral range of 200 - 2000 nm. The angle dependent transmission measurements were investigated by rotating the specimen, with incidence angle defined relative to the surface normal of the prepared samples. This study demonstrates that the obtained SiO2 nanostructure film coated on glass slide substrate exhibits a higher transmission was 93% at normal incident angle. In addition, transmission measurement in visible wavelength and wide incident angles -80 to 80 were increased in comparison with the SiO2 thin film and glass slide substrate due to the transition in the refractive index profile from air to the nanostructure layer that improve the antireflection characteristics. The results clearly showed the enhanced omnidirectional and broadband characteristic of the three dimensional SiO

  12. The TiO2 Refraction Film for CsI Scintillator

    OpenAIRE

    C. C. Chen; C. W. Hun; C. J. Wang; C. Y. Chen; J. S. Lin; K. J. Huang

    2015-01-01

    Cesium iodide (CsI) melt was injected into anodic aluminum oxide (AAO) template and was solidified to CsI column. The controllable AAO channel size (10~500 nm) can makes CsI column size from 10 to 500 nm in diameter. In order to have a shorter light irradiate from each singe CsI column top to bottom the AAO template was coated a TiO2 nano-film. The TiO2 film acts a refraction film and makes X-ray has a shorter irradiation path in the CsI crystal making a stronger the photo-electron signal. Wh...

  13. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay

    2011-09-30

    Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Fabrication and Surface Properties of Composite Films of SAM/Pt/ZnO/SiO 2

    KAUST Repository

    Yao, Ke Xin; Zeng, Hua Chun

    2008-01-01

    Through synthetic architecture and functionalization with self-assembled monolayers (SAMs), complex nanocomposite films of SAM/Pt/ZnO/SiO2 have been facilely prepared in this work. The nanostructured films are highly uniform and porous, showing a

  15. Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

    Science.gov (United States)

    Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

    1988-03-01

    High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

  16. The effect of bulk/surface defects ratio change on the photocatalysis of TiO2 nanosheet film

    Science.gov (United States)

    Wang, Fangfang; Ge, Wenna; Shen, Tong; Ye, Bangjiao; Fu, Zhengping; Lu, Yalin

    2017-07-01

    The photocatalysis behavior of TiO2 nanosheet array films was studied, in which the ratio of bulk/surface defects were adjusted by annealing at different temperature. Combining positron annihilation spectroscopy, EPR and XPS, we concluded that the bulk defects belonged to Ti3+ related vacancy defects. The results show that the separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio of TiO2 nanosheet films, and in turn enhancing the photocatalysis behaviors.

  17. Synthesis and characterization of anatase-TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sankapal, B.R.; Lux-Steiner, M.Ch.; Ennaoui, A

    2005-01-15

    A new and effective method for the preparation of nanocrystalline TiO{sub 2} (anatase) thin films is presented. This method is based on the use of peroxo-titanium complex as a single precursor. Post-annealing treatment is necessary to convert the deposited amorphous film into TiO{sub 2} (anatase) phase. The films obtained are uniform, compact and free of pinholes. A wide range of techniques are used for characterization, namely X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (EDAX) and UV-Vis-NIR spectrophotometer. Glass, indium-doped tin oxide (ITO) and quartz are used as substrates. TiO{sub 2} (anatase) phase with (1 0 1) preferred orientation is obtained for the films. Byproduct (collected powder) consists of the same crystal structure. The optical measurement reveals the indirect bandgap of 3.2 eV.

  18. Improving the conductance of ZnO thin film doping with Ti by using a cathodic vacuum arc deposition process

    International Nuclear Information System (INIS)

    Wu, Chun-Sen; Lin, Bor-Tsuen; Jean, Ming-Der

    2011-01-01

    The Ti-doped ZnO films compared to un-doped ZnO films were deposited onto Corning XG glass substrates by using a cathodic vacuum arc deposition process in a mixture of oxygen and argon gases. The structural, electrical and optical properties of un-doped and Ti-doped ZnO films have been investigated. When the Ti target power is about 750 W, the incorporation of titanium atoms into zinc oxide films is obviously effective. Additionally, the resistivity of un-doped ZnO films is high and reduces to a value of 3.48 x 10 -3 Ω-cm when Ti is incorporated. The Ti doped in the ZnO films gave rise to the improvement of the conductivity of the films obviously. The Ti-doped ZnO films have > 85% transmittance in a range of 400-700 nm.

  19. A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

    Directory of Open Access Journals (Sweden)

    Yantao Liu

    2018-03-01

    Full Text Available An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.

  20. Influences of annealing temperature on sprayed CuFeO2 thin films

    Science.gov (United States)

    Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

    2018-06-01

    Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

  1. The effect of bulk/surface defects ratio change on the photocatalysis of TiO{sub 2} nanosheet film

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fangfang [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Ge, Wenna [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China); Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Shen, Tong [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Ye, Bangjiao [State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, Hefei 230026 (China); Department of Modern Physics, University of Science and Technology of China, Hefei 230026 (China); Fu, Zhengping, E-mail: fuzp@ustc.edu.cn [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Lu, Yalin, E-mail: yllu@ustc.edu.cn [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 (China); Synergetic Innovation Center of Quantum Information & Stop Quantum Physics, University of Science and Technology of China, Hefei 230026 (China); National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, Anhui (China)

    2017-07-15

    Highlights: • The defect behaviors of TiO{sub 2} nanosheet array films were studied by positron annihilation spectroscopy. • Different bulk/surface defect ratios were realized by annealing at different temperature. • It was concluded that bulk defects are mainly Ti{sup 3+} vacancy defects. • The separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio. - Abstract: The photocatalysis behavior of TiO{sub 2} nanosheet array films was studied, in which the ratio of bulk/surface defects were adjusted by annealing at different temperature. Combining positron annihilation spectroscopy, EPR and XPS, we concluded that the bulk defects belonged to Ti{sup 3+} related vacancy defects. The results show that the separation efficiency of photogenerated electrons and holes could be significantly improved by optimizing the bulk/surface defects ratio of TiO{sub 2} nanosheet films, and in turn enhancing the photocatalysis behaviors.

  2. Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property

    International Nuclear Information System (INIS)

    Li, Bao-jia; Huang, Li-jing; Ren, Nai-fei; Zhou, Ming

    2014-01-01

    Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO 2 )/FTO bilayer films. Large and densely arranged grains were observed on all TiO 2 /FTO bilayer films. The presence of TiO 2 tetragonal rutile phase in the TiO 2 /FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO 2 /FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10 −2 Ω −1 , higher than 1.78 × 10 −2 Ω −1 for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO 2 /FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10 −2 Ω −1 , indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.

  3. Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

    International Nuclear Information System (INIS)

    Prasanna, S.; Mohan Rao, G.; Jayakumar, S.; Kannan, M.D.; Ganesan, V.

    2012-01-01

    Alumina (Al 2 O 3 ) thin films were sputter deposited over well-cleaned glass and Si substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al 2 O 3 -Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: ► Al 2 O 3 thin films were deposited by DC reactive magnetron sputtering. ► The films were found to be amorphous up to annealing temperature of 550 C. ► An increase in rms roughness of the films was observed with annealing. ► Al-Al 2 O 3 -Al thin film capacitors were fabricated and dielectric constant was 7.5. ► The activation energy decreased with increase in frequency.

  4. Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

    2015-09-30

    Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

  5. Effect of Mn doping on the structural, magnetic, optical and electrical properties of ZrO_2–SnO_2 thin films prepared by sol–gel method

    International Nuclear Information System (INIS)

    Anitha, V.S.; Sujatha Lekshmy, S.; Joy, K.

    2016-01-01

    Manganese doped ZrO_2–SnO_2 (ZrO_2–SnO_2: Mn) nanocomposite thin films were prepared using sol – gel dip coating technique. The structural, morphological, magnetic, optical and electrical properties of the films were studied for undoped and different (15 mol %) manganese doping concentrations. X-ray diffraction pattern (XRD) of films showed the formation of tetragonal phase of SnO_2 and orthorhombic ZrSnO_4. Decrease in crystallinity with increase of Mn concentration was observed for the films. Scanning electron microscopy (SEM) showed the formation of grain growth with an increase in Mn concentration. X-ray photo electron spectroscopy (XPS) confirmed the presence of Zr"4"+, Sn"4"+ and Mn"2"+ ion in ZrO_2–SnO_2: Mn films. Vibrating sample magnetometer (VSM) measurements reveal the presence of magnetic properties in Mn doped nanocomposite thin films. Antiferromagnetic interactions were observed for 5 mol % Mn doping. An average transmittance >80% (UV - Vis region) was observed for all the films. Band gap of the films decreased from 4.78 to 4.41 eV with increase in Mn concentration. Photoluminescence (PL) spectra of the films exhibited emission peaks in visible region of the electromagnetic spectra. Conductivity of the film increased up to 3 mol % Mn doping and then decreased. - Highlights: • ZrO_2–SnO_2: Mn films were deposited onto quartz substrates by Sol –Gel dip coating. • Structural, magnetic, optical and electrical properties of the films were analyzed. • Optical band gap decreased with increase in manganese concentration. • Ferromagnetic behavior was observed for Mn doped films. • These ferromagnetic ZrO_2–SnO_2: Mn films find application in spintronic devices.

  6. Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface

    Science.gov (United States)

    Ohta, Hiromichi; Watanabe, Takanobu; Ohdomari, Iwao

    2008-10-01

    Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.

  7. The antibacterial and hydrophilic properties of silver-doped TiO{sub 2} thin films using sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Wang Xuemin [College of Physics and Electronic Information, Tianjin Normal University, Tianjin, 300387 (China); Hou Xinggang, E-mail: hou226@163.com [College of Physics and Electronic Information, Tianjin Normal University, Tianjin, 300387 (China); Luan Weijiang [College of Biology, Tianjin Normal University, Tianjin, 300387 (China); Li Dejun; Yao Kun [College of Physics and Electronic Information, Tianjin Normal University, Tianjin, 300387 (China)

    2012-08-01

    Ag-TiO{sub 2} composite thin films were deposited on glass slides by sol-gel spin coating technique. The surface structure, chemical components and transmittance spectra were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and UV-vis spectrophotometer. The TiO{sub 2} thin films with silver molar ratio from 0 to 10% were tested for its antibacterial property by using Escherichia coliform (E. coli) under irradiation of UV light. The concentration of E. coli was evaluated by plating technique. The influences of different molar ratio of Ag on hydrophilicity and long-term durability of the films were also investigated by measuring the water contact angle. The results showed that the antibacterial ability was significantly improved by increasing silver content comparing with pure TiO{sub 2} thin film, and the best molar ratio of Ag was 5%. While the hydrophilicity of films increased with increasing silver content, and the best molar ratio of Ag was 1%.

  8. Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

    Science.gov (United States)

    Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

    2018-03-01

    In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

  9. X-ray photoelectron spectroscopy characterization of composite TiO{sub 2}-poly(vinylidenefluoride) films synthesised for applications in pesticide photocatalytic degradation

    Energy Technology Data Exchange (ETDEWEB)

    Losito, I.; Amorisco, A.; Palmisano, F.; Zambonin, P.G

    2005-02-15

    X-ray photoelectron spectroscopy (XPS) was adopted for the analytical characterization of composite titanium dioxide-poly(vinylidenefluoride) (TiO{sub 2}-PVDF) films developed for applications in the photocatalytic degradation of pollutants. The composites were deposited on glass substrates by casting or spin coating from TiO{sub 2}-PVDF suspensions in dimethylformamide (DMF). XPS data on the TiO{sub 2}-PVDF surface composition were used to optimize preparation conditions (composition of the TiO{sub 2}/PVDF suspension, deposition technique) in terms of titanium dioxide surface amount and film stability. The use of spin-coating deposition and the increase of TiO{sub 2} amount in the DMF suspensions were found to improve the titanium surface content, although high TiO{sub 2}/PVDF ratios led to film instability. PVDF-TiO{sub 2} films were also used in preliminary photocatalytic degradation tests on isoproturon, a phenylurea herbicide, under solar UV irradiation; the results were compared to direct photolysis to evaluate the catalytic efficiency of immobilized TiO{sub 2} and the role played by the PVDF film during the degradation process.

  10. Interaction of Au with thin ZrO2 films: influence of ZrO2 morphology on the adsorption and thermal stability of Au nanoparticles.

    Science.gov (United States)

    Pan, Yonghe; Gao, Yan; Kong, Dandan; Wang, Guodong; Hou, Jianbo; Hu, Shanwei; Pan, Haibin; Zhu, Junfa

    2012-04-10

    The model catalysts of ZrO(2)-supported Au nanoparticles have been prepared by deposition of Au atoms onto the surfaces of thin ZrO(2) films with different morphologies. The adsorption and thermal stability of Au nanoparticles on thin ZrO(2) films have been investigated using synchrotron radiation photoemission spectroscopy (SRPES) and X-ray photoelectron spectroscopy (XPS). The thin ZrO(2) films were prepared by two different methods, giving rise to different morphologies. The first method utilized wet chemical impregnation to synthesize the thin ZrO(2) film through the procedure of first spin-coating a zirconium ethoxide (Zr(OC(2)H(5))(4)) precursor onto a SiO(2)/Si(100) substrate at room temperature followed by calcination at 773 K for 12 h. Scanning electron microscopy (SEM) investigations indicate that highly porous "sponge-like nanostructures" were obtained in this case. The second method was epitaxial growth of a ZrO(2)(111) film through vacuum evaporation of Zr metal onto Pt(111) in 1 × 10(-6) Torr of oxygen at 550 K followed by annealing at 1000 K. The structural analysis with low energy electron diffraction (LEED) of this film exhibits good long-range ordering. It has been found that Au forms smaller particles on the porous ZrO(2) film as compared to those on the ordered ZrO(2)(111) film at a given coverage. Thermal annealing experiments demonstrate that Au particles are more thermally stable on the porous ZrO(2) surface than on the ZrO(2)(111) surface, although on both surfaces, Au particles experience significant sintering at elevated temperatures. In addition, by annealing the surfaces to 1100 K, Au particles desorb completely from ZrO(2)(111) but not from porous ZrO(2). The enhanced thermal stability for Au on porous ZrO(2) can be attributed to the stronger interaction of the adsorbed Au with the defects and the hindered migration or coalescence resulting from the porous structures. © 2012 American Chemical Society

  11. Optoelectronic properties of SnO2 thin films sprayed at different deposition times

    Science.gov (United States)

    Allag, Abdelkrim; Saâd, Rahmane; Ouahab, Abdelouahab; Attouche, Hafida; Kouidri, Nabila

    2016-04-01

    This article presents the elaboration of tin oxide (SnO2) thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film properties are investigated. The films are characterized by several techniques such as x-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible (UV-Vis) transmission, and four-probe point measurements, and the results suggest that the prepared films are uniform and well adherent to the substrates. X-ray diffraction (XRD) patterns show that SnO2 film is of polycrystal with cassiterite tetragonal crystal structure and a preferential orientation along the (110) plane. The calculated grain sizes are in a range from 32.93 nm to 56.88 nm. Optical transmittance spectra of the films show that their high transparency average transmittances are greater than 65% in the visible region. The optical gaps of SnO2 thin films are found to be in a range of 3.64 eV-3.94 eV. Figures of merit for SnO2 thin films reveal that their maximum value is about 1.15 × 10-4 Ω-1 at λ = 550 nm. Moreover, the measured electrical resistivity at room temperature is on the order of 10-2 Ω·cm.

  12. Measurement of the extinction of sputtered TiO/sub 2/ films

    Energy Technology Data Exchange (ETDEWEB)

    Welsch, E; Lieder, G; Walther, H G; Hacker, E

    1982-05-28

    In this paper a method for separate measurement of the extinction of optical thin films is presented. The method combines a laser calorimetric technique and a light-scattering goniophotometer. As an example, the spectral extinction properties of r.f. reactively sputtered TiO/sub 2/ films were measured. Under certain conditions absorption indices of 10/sup -5/ or less can be achieved. Thus light scattering, rather than absorption, is the dominant optical loss mechanism in sputtered TiO/sub 2/ films.

  13. Structural transformation of sputtered o-LiMnO2 thin-film cathodes induced by electrochemical cycling

    International Nuclear Information System (INIS)

    Fischer, J.; Chang, K.; Ye, J.; Ulrich, S.; Ziebert, C.; Music, D.; Hallstedt, B.; Seifert, H.J.

    2013-01-01

    Orthorhombic LiMnO 2 (o-LiMnO 2 ) thin films were produced by non-reactive r.f. magnetron sputtering in combination with thermal post-annealing. Oxide phase formation was investigated by X-ray diffraction and Raman spectroscopy. In order to assign the X-ray signals and estimate the grain size, a simulation of the diffraction pattern was performed and compared with experimental data. The density of the films was determined to be 3.39 g/cm 3 using X-ray reflectivity. Electrochemical characterization was carried out by galvanostatic cycling and cyclic voltammetry of Li/o-LiMnO 2 half cells. There are distinct redox reactions at approx. 3 V and 4 V, whereas the latter splits into multiple peaks. Using ab initio calculations and thermodynamic models, Gibbs energies of o-LiMnO 2 and c-LiMn 2 O 4 were determined. The relation between these energies explains the irreversible phase transformation that has been observed during the cycling of the Li/o-LiMnO 2 half cell. - Highlights: • Quantitative, thermodynamic modeling of the o-LiMnO 2 /c-LiMn 2 O 4 phase transformation • First CV-investigations on magnetron sputtered nanocrystalline o-LiMnO 2 thin films • Synthesis of o-LiMnO 2 planar model systems for protective coating and SEI development

  14. Growth and characterisation of potentiostatically electrodeposited Cu2O and Cu thin films

    International Nuclear Information System (INIS)

    Wijesundera, R.P.; Hidaka, M.; Koga, K.; Sakai, M.; Siripala, W.

    2006-01-01

    Cuprous oxide and copper thin films were potentiostatically electrodeposited in an acetate bath. Voltammetric curves were used to investigate the growth parameters; deposition potential, pH and temperature of the bath. Deposition potential dependency on the structural, morphological, optical and electronic properties of the films were investigated by the X-ray diffraction measurements, scanning electron micrographs, absorption measurements and dark and light current-voltage characterisations. It was observed that single phase polycrystalline Cu 2 O can be deposited from 0 to - 300 mV Vs saturated calomel electrode (SCE) and co-deposition of Cu and Cu 2 O starts at - 400 mV Vs SCE. Further increase in deposition potential from - 700 mV Vs SCE produces single phase Cu thin films. Single phase polycrystalline Cu 2 O thin films with cubic grains of 1-2 μm can be possible within the very narrow potential domain around - 200 mV Vs SCE. Enhanced photoresponse in a photoelectrochemical cell is produced by the Cu 2 O thin film prepared at - 400 mV Vs SCE, where Cu is co-deposited with Cu 2 O with random distribution of Cu spheres on the Cu 2 O surface. This study reveals that a single deposition bath can be used to deposit both Cu and Cu 2 O separately and an admixture of Cu-Cu 2 O by controlling the deposition parameters

  15. A chemical route to room-temperature synthesis of nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Pathan, Habib M.; Kim, Woo Young; Jung, Kwang-Deog; Joo, Oh-Shim

    2005-01-01

    A lot of methods are developed for the deposition of TiO 2 thin films; however, in each of these methods as-deposited films are amorphous and need further heat treatment at high temperature. In the present article, a chemical bath deposition (CBD) method was used for the preparation of TiO 2 thin films. We investigated nanocrystalline TiO 2 thin films using CBD at room temperature onto glass and ITO coated glass substrate. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM) techniques. The chemically synthesized films were nanocrystalline and composed of crystal grains of 2-3 nm

  16. Structural and vibrational investigations of Nb-doped TiO2 thin films

    International Nuclear Information System (INIS)

    Uyanga, E.; Gibaud, A.; Daniel, P.; Sangaa, D.; Sevjidsuren, G.; Altantsog, P.; Beuvier, T.; Lee, Chih Hao; Balagurov, A.M.

    2014-01-01

    Highlights: • We studied the evolutions of structure for TiO 2 thin film as changes with Nb doping and temperatures. • Up to 800 °C, the grain size of Nb 0.1 Ti 0.9 O 2 is smaller than for pure TiO 2 because doped Nb hinders the growth of the TiO 2 grains. • There was no formation of the rutile phase at high temperature. • Nb doped TiO 2 films have high electron densities at 400–700 °C. • Nb dope extends the absorbance spectra of TiO 2 which leads to the band gap reduce. - Abstract: Acid-catalyzed sol–gel and spin-coating methods were used to prepare Nb-doped TiO 2 thin film. In this work, we studied the effect of niobium doping on the structure, surface, and absorption properties of TiO 2 by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray reflectometry (XRR), X-ray photoelectron spectroscopy (XPS), Raman, and UV–vis absorption spectroscopy at various annealing temperatures. EDX spectra show that the Nb:Ti atomic ratios of the niobium-doped titania films are in good agreement with the nominal values (5 and 10%). XPS results suggest that charge compensation is achieved by the formation of Ti vacancies. Specific niobium phases are not observed, thus confirming that niobium is well incorporated into the titania crystal lattice. Thin films are amorphous at room temperature and the formation of anatase phase appeared at an annealing temperature close to 400 °C. The rutile phase was not observed even at 900 °C (XRD and Raman spectroscopy). Grain sizes and electron densities increased when the temperature was raised. Nb-doped films have higher electron densities and lower grain sizes due to niobium doping. Grain size inhibition can be explained by lattice stress induced by the incorporation of larger Nb 5+ ions into the lattice. The band gap energy of indirect transition of the TiO 2 thin films was calculated to be about 3.03 eV. After niobium doping, it decreased to 2.40 eV

  17. Magnetoelectric effect in Cr2O3 thin films

    Science.gov (United States)

    He, Xi; Wang, Yi; Sahoo, Sarbeswar; Binek, Christian

    2008-03-01

    Magnetoelectric materials experienced a recent revival as promising components of novel spintronic devices [1, 2, 3]. Since the magnetoelectric (ME) effect is relativistically small in traditional antiferromagnetic compounds like Cr2O3 (max. αzz 4ps/m ) and also cross- coupling between ferroic order parameters is typically small in the modern multiferroics, it is a challenge to electrically induce sufficient magnetization required for the envisioned device applications. A straightforward approach is to increase the electric field at constant voltage by reducing the thickness of the ME material to thin films of a few nm. Since magnetism is known to be affected by geometrical confinement thickness dependence of the ME effect in thin film Cr2O3 is expected. We grow (111) textured Cr2O3 films with various thicknesses below 500 nm and study the ME effect for various ME annealing conditions as a function of temperature with the help of Kerr-magnetometry. [1] P. Borisov et al. Phys. Rev. Lett. 94, 117203 (2005). [2] Ch. Binek, B.Doudin, J. Phys. Condens. Matter 17, L39 (2005). [3] R. Ramesh and Nicola A. Spaldin 2007 Nature Materials 6 21.

  18. Photoelectrochemical Characterization of Sprayed α-Fe2O3 Thin Films: Influence of Si Doping and SnO2 Interfacial Layer

    Directory of Open Access Journals (Sweden)

    Yongqi Liang

    2008-01-01

    Full Text Available α-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc3. The donor density in the Fe2O3 films could be tuned between 1017–1020 cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting substrates, both the reproducibility and the photocurrent can be enhanced. The effects of Si doping and the presence of the SnO2 interfacial layer were systematically studied. The highest photoresponse is obtained for Fe2O3 doped with 0.2% Si, resulting in a photocurrent of 0.37 mA/cm2 at 1.23 VRHE in a 1.0 M KOH solution under 80 mW/cm2 AM1.5 illumination.

  19. Enhancement of room temperature ferromagnetic behavior of rf sputtered Ni-CeO_2 thin films

    International Nuclear Information System (INIS)

    Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Ravi, G.

    2016-01-01

    Highlights: • Ni-CeO_2 thin films deposited by using rf Magnetron sputtering with different concentrations of Ni. • Deposited thin films have single crystalline and uniform surface morphology. • Photoluminescence and micro-Raman spectra were interpreted for Ni-CeO_2 thin films. • XPS spectra confirmed Ni ions were present in the doped CeO_2 thin films. • Ni ions induced ferromagnetic behavior of Ni-CeO_2 films were confirmed through VSM. - Abstract: Ni-doped CeO_2 thin films were prepared under Ar"+ atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO_2 films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO_2 cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO_2. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO_2. XPS results confirm the presence of Ni_2_p, O_1_s and Ce and depict that cerium is present as both Ce"4"+ and Ce"3"+ oxidation states in Ce_1_−_xNi_xO_2 (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO_2, while a ferromagnetic behavior appeared when Ni is doped in CeO_2 films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size distribution.

  20. Comparison of effective relative dielectric permittivities obtained by three independent ways for CeO2-Sm2O3 films prepared by EB-PVD (+IBAD) techniques

    International Nuclear Information System (INIS)

    Kundracik, F.; Neilinger, P.; Hartmanova, M.; Nadazdy, V.; Mansilla, C.

    2011-01-01

    Ceria, as material with relatively high dielectric permittivity, ε r , and ability to form films on the Si substrate, is a candidate for the gate dielectrics in the MOS devices. Doping with suitable e.g. trivalent rare earth oxides and suitable treatment after deposition (preparation) can improve their properties, e.g. ionic conductivity, dielectric permittivity and mechanical hardness. In this work, the dielectric properties of CeO 2 + Sm 2 O 3 films prepared by electron beam physical vapour deposition (EB-PVD) and some of them simultaneously also by the Ar + ionic beam assisted deposition (IBAD) techniques are analysed. (authors)

  1. Chemical synthesis of Fe{sub 2}O{sub 3} thin films for supercapacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Kulal, P.M.; Dubal, D.P.; Lokhande, C.D. [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Fulari, V.J., E-mail: vijayfulari@gmail.com [Holography and Material Research Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2011-02-03

    Research highlights: > Simple chemical synthesis of Fe{sub 2}O{sub 3}. > Formation of amorphous and hydrous Fe{sub 2}O{sub 3}. > Potential candidate for supercapacitors. - Abstract: Fe{sub 2}O{sub 3} thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, scanning electron microscopy (SEM), wettability test and optical absorption studies. The XRD pattern showed that the Fe{sub 2}O{sub 3} films exhibit amorphous in nature. Formation of iron oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.2 eV. Fe{sub 2}O{sub 3} film surface showed superhydrophilic nature with water contact angle less than 10{sup o}. The supercapacitive properties of Fe{sub 2}O{sub 3} thin film investigated in 1 M NaOH electrolyte showed supercapacitance of 178 F g{sup -1} at scan rate 5 mV/s.

  2. Double layer films based on TiO{sub 2} and NiO{sub x} for gas detection

    Energy Technology Data Exchange (ETDEWEB)

    Kosc, I., E-mail: ivan.kosc@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia); Hotovy, I. [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia); Roch, T.; Plecenik, T.; Gregor, M. [Faculty of Mathematics, Physics and Informatics, Comenius University, Bratislava (Slovakia); Predanocy, M. [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia); Cehlarova, M.; Kus, P.; Plecenik, A. [Faculty of Mathematics, Physics and Informatics, Comenius University, Bratislava (Slovakia)

    2014-09-01

    Highlights: • Double layer films based on TiO{sub 2} and NiO{sub x} for gas detection were studied. • Structural, compositional and morphological properties were investigated. • XPS spectra of TiO{sub 2} and NiO{sub x} were identified. • P- and n-type of response to hydrogen were presented. • Inversion of conductivity response type was confirmed. - Abstract: Double layer films based on TiO{sub 2} and NiO{sub x} for gas detection were studied. Two layouts with opposite position of functional films were deposited via DC magnetron sputtering method and annealed at 600 °C. The compositional, structural, morphological, electrical and gas sensing parameters were investigated. The depth profiles and the chemical state of the thin films elements were explored by X-ray photoelectron spectroscopy (XPS). Differences between the surface and subsurface NiO{sub x} were confirmed. In this way the formation of surface oxides and subsurface metallic Ni were observed. The structural changes and polycrystalline character were noticed by X-ray diffraction (XRD). The atomic force microscopy (AFM) revealed nanocrystalline character of the examined surfaces (both layouts). Different position of TiO{sub 2} and NiO{sub x} functional films brought difference in the type of response to reducing gas. Moreover, inversion of response type due to different H{sub 2} concentrations was confirmed.

  3. Influence of operating parameters on surface properties of RF glow discharge oxygen plasma treated TiO{sub 2}/PET film for biomedical application

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyaraj, K. Navaneetha, E-mail: dr.knpr@gmail.com [Surface Engineering Laboratory, Department of Physics, Sri Shakthi Institute of Engineering and Technology, L and T by pass, Chinniyam Palayam (post), Coimbatore 641062 (India); Deshmukh, R.R. [Department of Physics, Institute of Chemical Technology, Matunga, Mumbai 400 019 (India); Mahendiran, R. [Surface Engineering Laboratory, Department of Physics, Sri Shakthi Institute of Engineering and Technology, L and T by pass, Chinniyam Palayam (post), Coimbatore 641062 (India); Su, Pi-G [Department of Chemistry, Chinese Culture University, Taipei 111, Taiwan (China); Yassitepe, Emre; Shah, Ismat [Department of Physics and Astronomy, Department of Materials Science and Engineering, University of Delaware, 208 Dupont Hall, Newark (United States); Perni, Stefano [School of Pharmacy and Pharmaceutical Sciences, Cardiff University, Cardiff (United Kingdom); Prokopovich, Polina [School of Pharmacy and Pharmaceutical Sciences, Cardiff University, Cardiff (United Kingdom); Institute of Medical Engineering and Medical Physics, School of Engineering, Cardiff University (United Kingdom); Nadagouda, Mallikarjuna N., E-mail: Nadagouda.Mallikarjuna@epamail.epa.gov [The U.S. Environmental Protection Agency, ORD, NRMRL, WSWRD, 26W. Martin Luther King Drive, Cincinnati, OH 45268 (United States)

    2014-03-01

    In this paper, a thin transparent titania (TiO{sub 2}) film was coated on the surface of flexible poly(ethylene terephthalate) (PET) film using the sol–gel method. The surface properties of the obtained TiO{sub 2}/PET film were further improved by RF glow discharge oxygen plasma as a function of exposure time and discharge power. The changes in hydrophilicity of TiO{sub 2}/PET films were analyzed by contact angle measurements and surface energy. The influence of plasma on the surface of the TiO{sub 2}/PET films was analyzed by atomic force microscopy (AFM) as well as the change in chemical state and composition that were investigated by X-ray photo electron spectroscopy (XPS). The cytotoxicity of the TiO{sub 2}/PET films was analyzed using human osteoblast cells and the bacterial eradication behaviors of TiO{sub 2}/PET films were also evaluated against Staphylococcus bacteria. It was found that the surface roughness and incorporation of oxygen containing polar functional groups of the plasma treated TiO{sub 2}/PET films increased substantially as compared to the untreated one. Moreover the increased concentration of Ti{sup 3+} on the surface of plasma treated TiO{sub 2}/PET films was due to the transformation of chemical states (Ti{sup 4+} → Ti{sup 3+}). These morphological and chemical changes are responsible for enhanced hydrophilicity of the TiO{sub 2}/PET films. Furthermore, the plasma treated TiO{sub 2}/PET film exhibited no citotoxicity against osteoblast cells and antibacterial activity against Staphylococcus bacteria which can find application in manufacturing of biomedical devices. - Graphical abstract: Mechanism of plasma treatment on the surface of TiO{sub 2}/PET films. - Highlights: • Investigated the surface properties of TiO{sub 2}/PET films modified by O{sub 2} plasma • Studied the effect of operating parameters on surface properties of TiO{sub 2}/PET films • Mechanism of the plasma treatment on TiO{sub 2}/PET was clearly investigated.

  4. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  5. Development of ecofriendly bionanocomposite: Whey protein isolate/pullulan films with nano-SiO2.

    Science.gov (United States)

    Hassannia-Kolaee, Mahbobeh; Khodaiyan, Faramarz; Pourahmad, Rezvan; Shahabi-Ghahfarrokhi, Iman

    2016-05-01

    During the past decade, the limitation of petroleum based polymers, the high price of oil, and the environmental concern were attracted the attention of researchers to develop biobased polymers. The composition of different biopolymers and the reinforcement with nano filler are common methods to improve the drawbacks of biopolymers. In this study whey protein isolate/pullulan (WPI/PUL) films contain 1%, 3%, and 5% (w/w) nano-SiO2 (NS) were prepared by a casting method. Tensile strength of nanocomposite films increased after increasing NS content, but elongation at break decreased, simultaneously. Water absorption, moisture content, solubility in water improved in the wake of increasing NS content because NS increase the cohesiveness of the polymer matrix and improved the barrier and water resistance properties of the films. water vapor permeability of film specimens decreased by increasing NS content. Uniform distribution of NS into polymer matrix was confirmed by scanning electron microscopy (SEM). XRD pattern and thermal analysis revealed increasing crystallinity and increasing Tg of film specimens with increasing NS content, respectively. According to our result WPI/PUL/NS films possess potential to be used as environment friendly packaging films to improve shelf life of food and can be used as promising alternative to petroleum based packaging films. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Nanocrystalline SnO2-TiO2 thin film deposited on base of equilateral prism as an opto-electronic humidity sensor

    Science.gov (United States)

    Yadav, B. C.; Verma, Nidhi; Singh, Satyendra

    2012-09-01

    Present paper reports the synthesis of SnO2-TiO2 nanocomposite, its characterization and performance as opto-electronic humidity sensor. Nanocrystalline SnO2-TiO2 film was deposited on the base of an equilateral prism using a photo resist spinner and the as prepared film was annealed at 200 °C for 2 h. The crystal structure of the prepared film was investigated using X-ray diffraction (XRD). Minimum crystallite size of the material was found 7 nm. Surface morphology of the film was investigated by Scanning electron microscope (SEM LEO-0430, Cambridge). SEM image shows that the film is porous. Differential scanning calorimetry (DSC) of as synthesized material shows two exothermic peaks at about 40 and 110 °C, respectively which are due to the evaporation of chemical impurities and water. Further the prepared film was investigated through the exposure of humidity and relative humidity (%RH) was measured directly in terms of modulation in the intensity of light recorded on a digital power meter. The maximum sensitivity of sensor was found 4.14 μW/%RH, which is quite significant for sensor fabrication purposes.

  7. Manufacturing and investigation of surface morphology and optical properties of composite thin films reinforced by TiO2, Bi2O3 and SiO2 nanoparticles

    Science.gov (United States)

    Jarka, Paweł; Tański, Tomasz; Matysiak, Wiktor; Krzemiński, Łukasz; Hajduk, Barbara; Bilewicz, Marcin

    2017-12-01

    The aim of submitted paper is to present influence of manufacturing parameters on optical properties and surface morphology of composite materials with a polymer matrix reinforced by TiO2 and SiO2 and Bi2O3 nanoparticles. The novelty proposed by the authors is the use of TiO2 and SiO2 and Bi2O3 nanoparticles simultaneously in polymeric matrix. This allows using the combined effect of nanoparticles to a result composite material. The thin films of composite material were prepared by using spin-coating method with various spinning rates from solutions of different concentration of nanoparticles. In order to prepare the spinning solution polymer, Poly(methyl methacrylate) (PMMA) was used as a matrix. The reinforcing phase was the mixture of the nanoparticles of SiO2, TiO2 and B2O3. In order to identify the surface morphology of using thin films and arrangement of the reinforcing phase Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) were used. In order to study the optical properties of the obtained thin films, the thin films of composites was subjected to an ellipsometry analysis. The measurements of absorbance of the obtained materials, from which the value of the band gap width was specified, were carried out using the UV/VIS spectroscopy. The optical properties of obtain composite thin films depend not only on the individual components used, but also on the morphology and the interfacial characteristics. Controlling the participation of three kinds of nanoparticles of different sizes and optical parameters allows to obtaining the most optimal optical properties of nanocomposites and also controlling the deposition parameters allows to obtaining the most optimal surface morphology of nanocomposites.

  8. Preparation and electrochemical behaviour of Sb sub 2 O sub 5 films

    Energy Technology Data Exchange (ETDEWEB)

    Badawy, W.A. (Chemistry Dept., Faculty of Science, Univ. of Cairo, Giza (Egypt))

    1990-04-01

    Sb{sub 2}O{sub 5} films of various thicknesses were prepared on glass or glassy carbon using a chemical vapour deposition-spraying technique. A 0.5 M SbCl{sub 5}-ethyl acetate solution was used as a spray. This evaporated in front of the heated substrate and the hydrolysis reaction 2SbCl{sub 5} + 5 H{sub 2}O{yields}Sb{sub 2}O{sub 5} + 10HCl took place, leaving a homogeneous antimony oxide film adherent to the substrate surface. The effect of the thickness of the prepared film on its physical properties was studied. The electrochemical behaviour of electrodes of the oxide film in three different redox couples was investigated. The results reveal that the charge transfer reaction occurring at the electrode-electrode interface takes place via tunnelling of the electrons through the barrier formed by the space charge layer into the Sb{sub 2}O{sub 5} conduction band. (orig.).

  9. Damage evolution of ion irradiated defected-fluorite La 2 Zr 2 O 7 epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kaspar, Tiffany C.; Gigax, Jonathan G.; Shao, Lin; Bowden, Mark E.; Varga, Tamas; Shutthanandan, Vaithiyalingam; Spurgeon, Steven R.; Yan, Pengfei; Wang, Chongmin; Ramuhalli, Pradeep; Henager, Charles H.

    2017-05-01

    Pyrochlore-structure oxides, A2B2O7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning to a defected fluorite structure. The mechanism of defect formation was explored by evaluating the radiation damage behavior of high quality epitaxial La2Zr2O7 thin films with the defected fluorite structure, irradiated with 1 MeV Zr+ at doses up to 10 displacements per atom (dpa). The level of film damage was evaluated as a function of dose by Rutherford backscattering spectrometry in the channeling geometry (RBS/c) and scanning transmission electron microscopy (STEM). At lower doses, the surface of the La2Zr2O7 film amorphized, and the amorphous fraction as a function of dose fit well to a stimulated amorphization model. As the dose increased, the surface amorphization slowed, and amorphization appeared at the interface. Even at a dose of 10 dpa, the core of the film remained crystalline, despite the prediction of amorphization from the model. To inform future ab initio simulations of La2Zr2O7, the bandgap of a thick La2Zr2O7 film was measured to be indirect at 4.96 eV, with a direct transition at 5.60 eV.

  10. Damage performance of TiO2/SiO2 thin film components induced by a long-pulsed laser

    International Nuclear Information System (INIS)

    Wang Bin; Dai Gang; Zhang Hongchao; Ni Xiaowu; Shen Zhonghua; Lu Jian

    2011-01-01

    In order to study the long-pulsed laser induced damage performance of optical thin films, damage experiments of TiO 2 /SiO 2 films irradiated by a laser with 1 ms pulse duration and 1064 nm wavelength are performed. In the experiments, the damage threshold of the thin films is measured. The damages are observed to occur in isolated spots, which enlighten the inducement of the defects and impurities originated in the films. The threshold goes down when the laser spot size decreases. But there exists a minimum threshold, which cannot be further reduced by decreasing the laser spot size. Optical microscopy reveals a cone-shaped cavity in the film substrate. Changes of the damaged sizes in film components with laser fluence are also investigated. The results show that the damage efficiency increases with the laser fluence before the shielding effects start to act.

  11. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    International Nuclear Information System (INIS)

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-01-01

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 εo and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane

  12. Amorphous and crystalline In{sub 2}O{sub 3}-based transparent conducting films for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Koida, Takashi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan)

    2017-02-15

    We reported solar cells with reduced electrical and optical losses using hydrogen-doped In{sub 2}O{sub 3} (In{sub 2}O{sub 3}:H) transparent conducting layers with low sheet resistance and high transparence characteristics. The transparent conducting oxide (TCO) films were prepared by solid-phase crystallization of amorphous (a-) In{sub 2}O{sub 3}:H films grown by magnetron sputtering. The polycrystalline (poly-) In{sub 2}O{sub 3}:H films exhibited electron mobilities (over 100 cm{sup 2}V{sup -1} s{sup -1}) 2 and 3 times greater than those of conventional TCO films. This paper describes (i) the current status of the electrical properties of In{sub 2}O{sub 3}-based TCO; (ii) the structural and optoelectrical properties of the a-In{sub 2}O{sub 3}:H and poly-In{sub 2}O{sub 3}:H films, focusing on the inhomogeneity and stability characteristics of the films; and (iii) the electrical properties of bilayer TCO. The potential of these high mobility TCO films for solar cells was also described. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

    Energy Technology Data Exchange (ETDEWEB)

    Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

    2014-11-28

    The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe filmsImproved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

  14. Optimization of annealing parameters for the growth of epitaxial Ba2YCu3O7-x films on LaAlO3(100)

    International Nuclear Information System (INIS)

    Siegal, M.P.; Phillips, J.M.; van Dover, R.B.; Tiefel, T.H.; Marshall, J.H.

    1990-01-01

    The superconducting and structural properties of Ba 2 YCu 3 O 7-x (BYCO) films on LaAlO 3 (100) substrates can be improved by carefully optimizing the post-deposition annealing parameters. Films are grown by co-deposition of BaF 2 , Y, and Cu in the correct stoichiometric ratio to within 1% of 2:1:3. Annealing parameters in an ex situ furnace, including the ambient, annealing temperature, oxidation temperature, and duration of anneals are systematically studied. Films are characterized for epitaxial quality (χ min ), morphology, critical temperature (T c ), sharpness of the superconducting transition (ΔT), and critical current density (J c ). For example, beyond simply dissociating BaF 2 , the use of wet O 2 appears to prevent the agglomeration of oxides during the initial heating process, and then act to thermodynamically stabilize the basic BYCO film structure at high temperatures after being formed. Comparisons are made with the best single-crystal BYCO structural and electrical data available. The optimized films have relatively smooth morphology with χ min c >90 K, ΔT c >10 6 A/cm 2 in essentially zero magnetic field at 77 K

  15. Improvement of stoichiometry in (ZnO)1-x(GaN)x thin films grown by laser ablation

    International Nuclear Information System (INIS)

    Gopalakrishnan, N.; Shin, B.C.; Bhuvana, K.P.; Elanchezhiyan, J.; Balasubramanian, T.

    2008-01-01

    The fabrication of pure and GaN (1 mol%) doped ZnO thin films by KrF excimer laser have been addressed. The fabricated films on Si(1 1 1) substrates have been investigated by X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) in order to investigate the structural, optical and morphological properties, respectively. The XRD analysis shows that the full width at half maximum (FWHM) of ZnO film is found to be decreased as doped with GaN due to the improvement of the stoichiometery between Zn and O. The PL spectra reveal that the deep level emissions due to native donor defects in pure ZnO are suppressed upon doping with GaN. The images of AFM show that the RMS surface roughness of pure ZnO, 27 nm is reduced to18 nm while doped with 1 mol% GaN. The incorporation of nitrogen in the film is confirmed by glow discharge mass spectroscopy (GDMS). The improved structural, optical and morphological properties of ZnO by GaN dopant due to enhancement of stoichiometry have been discussed in detail

  16. Flux pinning enhancements in YBa2Cu3O7-8 superconductors through phase separated, self-assembled LaMnO3-MgO nanocomposite films.

    Energy Technology Data Exchange (ETDEWEB)

    Polat, Ozgur [ORNL; Aytug, Tolga [ORNL; Paranthaman, Mariappan Parans [ORNL; Leonard, Keith J [ORNL; Pennycook, Stephen J [ORNL; Kim, Kyunghoon [ORNL; Cook, Sylvester W [ORNL; Thompson, James R [ORNL; Christen, David K [ORNL; Goyal, Amit [ORNL; Selvamanickam, V. [SuperPower Incorporated, Schenectady, New York; Lupini, Andrew R [ORNL; Meyer, Hendrik [ORNL; Qiu, Xiaofeng [ORNL; Xiong, X. [SuperPower Incorporated, Schenectady, New York

    2011-01-01

    Technological applications of high temperature superconductors (HTS) require high critical current density, Jc, under operation at high magnetic field strengths. This requires effective flux pinning by introducing artificial defects through creative processing. In this work, we generated correlated disorder for strong vortex pinning in the YBa2Cu3O7- (YBCO) films by replacing the standard LaMnO3 (LMO) cap buffer layers in ion beam assisted deposited MgO templates with LMO:MgO composite films. Such films revealed formation of two phase-separated, but at the same time vertically aligned, self-assembled composite nanostructures that extend throughout the entire thickness of the film. Measurements of magnetic-field orientation-dependent Jc of YBCO coatings deposited on these nanostructured cap layers showed correlated c-axis pinning and improved in-field Jc performance compared to those of YBCO films deposited on standard LMO buffers. The present results demonstrate feasibility of novel and potentially practical approaches in the pursuit of more efficient, economical, and high performance superconducting devices.

  17. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone.

    Science.gov (United States)

    Jung, Hanearl; Kim, Woo-Hee; Park, Bo-Eun; Woo, Whang Je; Oh, Il-Kwon; Lee, Su Jeong; Kim, Yun Cheol; Myoung, Jae-Min; Gatineau, Satoko; Dussarrat, Christian; Kim, Hyungjun

    2018-01-17

    We report the effect of Y 2 O 3 passivation by atomic layer deposition (ALD) using various oxidants, such as H 2 O, O 2 plasma, and O 3 , on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (V th ) was observed in the case of the TFT subjected to the H 2 O-ALD Y 2 O 3 process; this shift was caused by a donor effect of negatively charged chemisorbed H 2 O molecules. In addition, degradation of the IGZO TFT device performance after the O 2 plasma-ALD Y 2 O 3 process (field-effect mobility (μ) = 8.7 cm 2 /(V·s), subthreshold swing (SS) = 0.77 V/dec, and V th = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O 3 -ALD Y 2 O 3 process led to enhanced device stability under light illumination (ΔV th = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔV th = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O 3 -ALD Y 2 O 3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

  18. MOCVD growth of transparent conducting Cd2SnO4 thin films

    International Nuclear Information System (INIS)

    Metz, A.W.; Poeppelmeier, K.R.; Marks, T.J.; Lane, M.A.; Kannewurt, C.R.

    2004-01-01

    The first preparation of transparent conducting Cd 2 SnO 4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa) 2 (TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd 2 SnO 4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  19. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  20. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

    2011-12-15

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  1. Metalorganic chemical vapor deposition of Er{sub 2}O{sub 3} thin films: Correlation between growth process and film properties

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)], E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

    2009-02-27

    Er{sub 2}O{sub 3} thin films have been grown by metalorganic chemical vapor deposition (MOCVD) at 600 deg. C on different substrates, including glass, Si (100) and sapphire (0001) using tris(isopropylcyclopentadienyl)erbium and O{sub 2}. The effects of growth parameters such as the substrate, the O{sub 2} plasma activation and the temperature of organometallic precursor injection, on the nucleation/growth kinetics and, consequently, on film properties have been investigated. Specifically, very smooth (111)-oriented Er{sub 2}O{sub 3} thin films (the root mean square roughness is 0.3 nm) are achieved on Si (100), {alpha}-Al{sub 2}O{sub 3} (0001) and amorphous glass by MOCVD. Growth under O{sub 2} remote plasma activation results in an increase in growth rate and in (100)-oriented Er{sub 2}O{sub 3} films with high refractive index and transparency in the visible photon energy range.

  2. Photoelectrocatalytic activity of liquid phase deposited α-Fe2O3 films under visible light illumination

    International Nuclear Information System (INIS)

    Zhang, Man; Pu, Wenhong; Pan, Shichang; Okoth, Otieno Kevin; Yang, Changzhu; Zhang, Jingdong

    2015-01-01

    Liquid phase deposition (LPD) technique was employed to prepare α-Fe 2 O 3 films for photoelectrocatalytic degradation of pollutants. The obtained LPD films were characterized by various surface analysis techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS). The results indicated that α-Fe 2 O 3 films with porous structure were successfully deposited on the titanium substrates by the LPD process. The UV–Visible diffuse reflectance spectroscopic (DRS) analysis showed that the obtained LPD α-Fe 2 O 3 film mainly absorbed visible light, which was advantageous to the utilization of solar energy. Under visible light illumination, the Fe 2 O 3 film electrodes exhibited sensitive photocurrent responses, which were affected by the calcination temperature. Consistent with the photocurrent analysis, the α-Fe 2 O 3 film calcined at 600 °C showed the best photoelectrocatalytic performance, and different organic pollutants such as methyl orange (MO) and p-nitrophenol (PNP) were effectively degraded over the LPD film electrode by photoelectrocatalytic treatment under visible light illumination. - Highlights: • α-Fe 2 O 3 film is prepared by liquid phase deposition process. • LPD α-Fe 2 O 3 film has a porous structure and absorbs visible light. • Calcination temperature shows a significant effect on the PEC performance of α-Fe 2 O 3 film. • α-Fe 2 O 3 film is efficient for photoelectrocatalytic degradation of pollutants

  3. Preparation of transparent Cu{sub 2}Y{sub 2}O{sub 5} thin films by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chiu, Te-Wei, E-mail: tewei@ntut.edu.tw; Chang, Chih-Hao; Yang, Li-Wei; Wang, Yung-Po

    2015-11-01

    Highlights: • Cu{sub 2}Y{sub 2}O{sub 5} thin films were prepared by RF magnetron sputtering. • Cu{sub 2}Y{sub 2}O{sub 5} thin films have high transmittance and antibacterial properties. • Mechanical properties of Cu{sub 2}Y{sub 2}O{sub 5} thin films were investigated. - Abstract: Cu{sub 2}Y{sub 2}O{sub 5} thin films were deposited on non-alkali glass substrates by RF magnetron sputtering. Its crystal structure, microstructure, optical property, mechanical property, and antibacterial activity were investigated by grazing-incidence X-ray diffraction, transmittance spectra, nanoindenter, and antibiotics test, respectively. A single-phase of Cu{sub 2}Y{sub 2}O{sub 5} was obtained while annealing at 700 °C in air and its optical transparency was >80% in the visible region. The hardness and elastic modulus of the film were 6.7 GPa and 82 GPa, respectively. Antibiotics testing result revealed that Cu{sub 2}Y{sub 2}O{sub 5} surface had a superior antibacterial performance even at a dark environment. Therefore, Cu{sub 2}Y{sub 2}O{sub 5} is a promising novel transparent antibacterial hard coating material.

  4. Tunable flux pinning landscapes achieved by functional ferromagnetic Fe2O3:CeO2 vertically aligned nanocomposites in YBa2Cu3O7−δ thin films

    International Nuclear Information System (INIS)

    Tsai, Chen-Fong; Huang, Jijie; Lee, Joon-Hwan; Khatkhatay, Fauzia; Chen, Li; Chen, Aiping; Su, Qing; Wang, Haiyan

    2015-01-01

    Highlights: • Functional ferromagnetic (Fe 2 O 3 ) x :(CeO 2 ) 1−x vertically aligned nanocomposites (VAN). • An ordered arrangement of ferromagnetic Fe 2 O 3 nanoinclusions. • Significant in-field improvement of J c (H//c) in both VAN nanolayer capped and buffered samples. • T c above 90 K and the J c sf maximized at 3.07 MA/cm 2 (75 K) and 9.2 MA/cm 2 (65 K) for 30% Fe 2 O 3 sample. - Abstract: Functional ferromagnetic (Fe 2 O 3 ) x :(CeO 2 ) 1−x vertically aligned nanocomposite (VAN) layers were deposited as either buffer or cap layers for YBa 2 Cu 3 O 7−δ (YBCO) thin films. The composition of Fe 2 O 3 dopants in the VAN nanolayers is controlled at 10%, 30% and 50% in order to create different arrangements of Fe 2 O 3 and CeO 2 nanopillars and therefore to tune the flux pining landscapes. The composition variation provides tunable and ordered arrangements of magnetic nanodopants and interfacial defects as pinning centers in the YBCO thin films. The superconducting property measurements show that most doped samples obtain a T c above 90 K and the J c sf measured at 75 K and 65 K maximized at 3.07 MA/cm 2 and 9.2 MA/cm 2 for 30% Fe 2 O 3 VAN doped sample. As the temperature decreased to 5 K, the sample with 50% Fe 2 O 3 VAN doped sample show the best pinning effect due to pronounced magnetic pinning effects. This work demonstrates the tunable density of magnetic pinning centers can be achieved by VAN to meet the specific pinning requirement

  5. Josephson effectss in bicrystalline Bi2Sr2CaCu2O8+δ thin films

    International Nuclear Information System (INIS)

    Amrein, T.

    1994-08-01

    A pulsed laser deposition process is developed for preparing high quality thin films of Bi 2 Sr 2 CaCu 2 O x on different substrates. Both microstructural and electrical properties of the superconducting films are well characterized, e.g. by SEM, TEM and AFM. The high reproducability of the thin film quality facilitated a detailed study of Josephson effects in bicrystalline grain boundary junctions (GBJs). Thin films are deposited on commercially available (001) SrTiO 3 bicrystalls and patterned by standard photolithography using wet-etching or Ar + -ion milling. The width of the micobridges ranges from 2 to 111 μm. The critical current densities across grain boundaries of thin film bicrystals have been measured as a function of the tilt angle Θ. For Θ=0 to 45 , the ratio of the grain boundary critical current density to the bulk critical current density decreases exponentially with increasing tilt angle. Microstructure investigations show a rough grain boundary of the superconductor (roughness 100 nm-1 μm) which is not determined by the roughness of the substrate grain boundary (1-3 nm) but by the island-plus-layer growth of the twin domains. The electrical properties are well described by the resistively shunted junction (RSJ) model. The I c R n -product reaches values of 2.2 mV at 4.2 K and 60 μV at 77 K. An optimized design for dc SQUIDs (Θ=24 ) is developed relating to the results of single GBJs. The values of the transfer function (∂V/∂Φ) run up to 74 μV/Φ o . The equivalent flux noise which is measured in a flux-locked loop mode amounts 4.5 to 25 μPhi o Hz in the white noise region for Φ≥25-50 Hz and 13 to 150 μΦ o Hz at 1 Hz. In conclusion, microstructural as well as electrical properties of bicrystalline Bi 2 Sr 2 CaCu 2 O x and YBa 2 Cu 3 O y GBJs are more or less equal. (orig.)

  6. Photocatalytic activity of Al{sub 2}O{sub 3}-doped TiO{sub 2} thin films activated with visible light on the bacteria Escherichia coli

    Energy Technology Data Exchange (ETDEWEB)

    Barajas-Ledesma, E., E-mail: edgar_acuario112@hotmail.com [Instituto de Investigaciones Metalurgicas, edificio ' U' , Ciudad Universitaria, UMSNH, Morelia, Michoacan, Mexico, C.P. 58000 (Mexico); Garcia-Benjume, M.L. [Instituto de Investigaciones Metalurgicas, edificio ' U' , Ciudad Universitaria, UMSNH, Morelia, Michoacan, Mexico, C.P. 58000 (Mexico); Espitia-Cabrera, I. [Facultad de Ingenieria Quimica, edificio ' M' , Ciudad Universitaria, UMSNH, Morelia, Michoacan, Mexico, C.P. 58000 (Mexico); Bravo-Patino, A. [Centro Multidisciplinario de Estudios en Biotecnologia, Km 9.5 Carretera Morelia-Zinapecuaro, Posta Veterinaria, Morelia, Michoacan, Mexico, C.P. 58262 (Mexico); Espinoza-Beltran, F.J. [CINVESTAV-Queretaro Libramiento Norponiente 2000, Fracc. Real de Juriquilla, Santiago de Queretaro, Queretaro, Mexico, C.P. 76230 (Mexico); Mostaghimi, J. [Faculty of Applied Science and Engineering, University of Toronto, 5 King' s College Road, Toronto, Ontario, M5S 3G8 (Canada); Contreras-Garcia, M.E. [Instituto de Investigaciones Metalurgicas, edificio ' U' , Ciudad Universitaria, UMSNH, Morelia, Michoacan, Mexico, C.P. 58000 (Mexico)

    2010-10-25

    Al{sub 2}O{sub 3}-doped TiO{sub 2} thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. A Corning* glass was used as a substrate, in which a titanium film was deposited by sputtering. Then, a precursor sol was prepared with Ti(n-OBu){sub 4} and Al(s-OBu){sub 3} and used as the medium for EPD. Next, the thin films were sintered and, finally, characterised by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Several cultures of Escherichia coli, strain XL1-Blue, were prepared. Nine experiments were carried out. In three of them, an inoculum (a low amount of a product that contains bacteria) was prepared without a film; in the other six Al{sub 2}O{sub 3}-doped TiO{sub 2} film-coated glass substrates were irradiated with visible light before they were introduced in the inoculum. The SEM and EDS results showed that TiO{sub 2}-Al{sub 2}O{sub 3} films were obtained, covering all the glass substrate and with uniform size of particles forming them, and that the aluminium was distributed uniformly on the film. XRD results showed that rutile phase was obtained. By TEM, the structure of TiO{sub 2} was demonstrated. Al{sub 2}O{sub 3}-doped TiO{sub 2} thin films were successful at eliminating E. coli.

  7. Elaboration of TiO2 films by PECVD for use in photocatalysis

    International Nuclear Information System (INIS)

    Di Lalla, N; Lasorsa, C; Pineda Ramos, P

    2012-01-01

    We present the first results in the production of films of titanium dioxide (TiO 2 ) deposited by Plasma enhanced chemical vapor deposition (PECVD). The films are destined for use in photocatalysis for water treatment. The deposits were made on glass from titanium isopropoxide as precursor (Ti[OCH(CH 3 ) 2 ]4) and a controlled flow of O 2 . The films were grown at room temperature and 300 o C to compare properties. The characterization of the deposits was performed using scanning electron microscopy, UV-visible transmittance and infrared absorbance. The deposits were obtained with very good adhesion to substrates showing energy values of band gap of 2.83 eV

  8. Multi-Layered TiO2 Films towards Enhancement of Escherichia coli Inactivation

    Directory of Open Access Journals (Sweden)

    Sorachon Yoriya

    2016-09-01

    Full Text Available Crystalline TiO2 has shown its great photocatalytic properties in bacterial inactivation. This work presents a design fabrication of low-cost, layered TiO2 films assembled reactors and a study of their performance for a better understanding to elucidate the photocatalytic effect on inactivation of E. coli in water. The ability to reduce the number of bacteria in water samples for the layered TiO2 composing reactors has been investigated as a function of time, while varying the parameters of light sources, initial concentration of bacteria, and ratios of TiO2 film area and volume of water. Herein, the layered TiO2 films have been fabricated on the glass plates by thermal spray coating prior to screen printing, allowing a good adhesion of the films. Surface topology and crystallographic phase of TiO2 for the screen-printed active layer have been characterized, resulting in the ratio of anatase:rutile being 80:20. Under exposure to sunlight and a given condition employed in this study, the optimized film area:water volume of 1:2.62 has shown a significant ability to reduce the E. coli cells in water samples. The ratio of surface area of photocatalytic active base to volume of water medium is believed to play a predominant role facilitating the cells inactivation. The kinetic rate of inactivation and its behavior are also described in terms of adsorption of reaction species at different contact times.

  9. MAPLE deposition and characterization of SnO2 colloidal nanoparticle thin films

    International Nuclear Information System (INIS)

    Caricato, A P; Martino, M; Romano, F; Tunno, T; Valerini, D; Epifani, M; Rella, R; Taurino, A

    2009-01-01

    In this paper we report on the deposition and characterization of tin oxide (SnO 2 ) nanoparticle thin films. The films were deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. SnO 2 colloidal nanoparticles with a trioctylphosphine capping layer were diluted in toluene with a concentration of 0.2 wt% and frozen at liquid nitrogen temperature. The frozen target was irradiated with a KrF (248 nm, τ = 20 ns) excimer laser (6000 pulses at 10 Hz). The nanoparticles were deposited on silica (SiO 2 ) and (1 0 0) Si substrates and submitted to morphological (high resolution scanning electron microscopy (SEM)), structural Fourier transform infrared spectroscopy (FTIR) and optical (UV-Vis transmission) characterizations. SEM and FTIR analyses showed that trioctylphosphine was the main component in the as-deposited films. The trioctylphosphine was removed after an annealing in vacuum at 400 0 C, thus allowing to get uniform SnO 2 nanoparticle films in which the starting nanoparticle dimensions were preserved. The energy gap value, determined by optical characterizations, was 4.2 eV, higher than the bulk SnO 2 energy gap (3.6 eV), due to quantum confinement effects.

  10. Synthesis and characterization of Ag doped TiO{sub 2} heterojunction films and their photocatalytic performances

    Energy Technology Data Exchange (ETDEWEB)

    Demirci, Selim, E-mail: selim.demirci@marmara.edu.tr [Marmara University, Department of Metallurgical and Materials Engineering, Kadiköy, 34722 Istanbul (Turkey); Dikici, Tuncay [Izmir Katip Celebi University, Department of Materials Science and Engineering, Cigli, 35620 Izmir (Turkey); Yurddaskal, Metin [Department of Metallurgical and Materials Engineering, Dokuz Eylul University, 35390 Izmir (Turkey); Center for Fabrication and Application of Electronic Materials, Dokuz Eylul University, 35390 Izmir (Turkey); Gultekin, Serdar [Department of Nanoscience and Nanoengineering, Dokuz Eylul University, 35390 İzmir (Turkey); Experimental Science Applications and Research Center, Celal Bayar University, 45140 Manisa (Turkey); Toparli, Mustafa; Celik, Erdal [Department of Metallurgical and Materials Engineering, Dokuz Eylul University, 35390 Izmir (Turkey); Department of Nanoscience and Nanoengineering, Dokuz Eylul University, 35390 İzmir (Turkey); Center for Fabrication and Application of Electronic Materials, Dokuz Eylul University, 35390 Izmir (Turkey)

    2016-12-30

    Highlights: • Ag doped TiO{sub 2} films were successfully synthesized by sol–gel spin coating method. • Ag in TiO{sub 2} lattice enters in intermediate states to decrease TiO{sub 2} bandgap energy. • Ag dopants increase the photoactivity and superhydrophilicity. • The degradation kinetics of methylene blue was studied. • The 0.7 mol% of Ag was found to be the optimum concentration. - Abstract: In this study, undoped and silver (Ag) doped titanium dioxide (TiO{sub 2}) films were successfully synthesized by sol-gel spin coating technique on the Si substrates. Photocatalytic activities of the TiO{sub 2} films with different Ag content were investigated for the degradation of methylene blue (MB) under UV light irradiation. The crystal phase structure, surface morphology, chemical and optical properties of Ag-doped TiO{sub 2} films were characterized using an X-ray diffractometer (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis spectrophotometer, and FTIR spectrophotometer. The results showed that the Ag-doped TiO{sub 2} films calcined at 500 °C had the crystalline anatase phases and the surface morphologies with some cracks. Ag substitution into TiO{sub 2} matrix enhanced the photocatalytic activity of TiO{sub 2} films under UV light irradiation as compared to the undoped TiO{sub 2} film. Furthermore, the results indicated that the 0.7% Ag doped TiO{sub 2} film exhibited a superior photocatalytic activity than that of undoped and other Ag-doped TiO{sub 2} films. This study demonstrated the potential of an application of Ag doped films to efficiently treat dissolved organic contaminants in water.

  11. Hydrogenated TiO{sub 2} film for enhancing photovoltaic properties of solar cells and self-sensitized effect

    Energy Technology Data Exchange (ETDEWEB)

    He, Hongcai; Yang, Kui; Wang, Ning, E-mail: ning-wang@uestc.edu.cn; Luo, Feifei; Chen, Haijun [State Key Laboratory of Electronic Thin Films and Integrated Devices and School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2013-12-07

    Hydrogenated TiO{sub 2} film was obtained by annealing TiO{sub 2} film at 350 °C for 2 h with hydrogen, and TiO{sub 2} films were prepared by screen printing on fluorine-doped tin oxide glass. Structural characterization by X-ray diffraction and electron microscopy did not show obvious difference between hydrogenated TiO{sub 2} film and pristine TiO{sub 2} film. Through optical and electrochemical characterization, the hydrogenated TiO{sub 2} film showed enhanced absorption and narrowed band gap, as well as reduced TiO{sub 2} surface impedance and dark current. As a result, an obviously enhanced photovoltaic effect was observed in the solar cell with hydrogenated TiO{sub 2} as photoanode without adding any dye due to the self-sensitized effect of hydrogenated TiO{sub 2} film, which excited electrons injecting internal conduction band of TiO{sub 2} to generate more photocurrent.

  12. QCM gas sensor characterization of ALD-grown very thin TiO2 films

    Science.gov (United States)

    Boyadjiev, S.; Georgieva, V.; Vergov, L.; Szilágyi, I. M.

    2018-03-01

    The paper presents a technology for preparation and characterization of titanium dioxide (TiO2) thin films suitable for gas sensor applications. Applying atomic layer deposition (ALD), very thin TiO2 films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The TiO2 thin films were grown using Ti(iOPr)4 and water as precursors. The surface of the films was observed by scanning electron microscopy (SEM), coupled with energy dispersive X-ray analysis (EDX) used for a composition study. The research was focused on the gas-sensing properties of the films. Films of 10-nm thickness were deposited on quartz resonators with Au electrodes and the QCMs were used to build highly sensitive gas sensors, which were tested for detecting NO2. Although very thin, these ALD-grown TiO2 films were sensitive to NO2 already at room temperature and could register as low concentrations as 50 ppm, while the sorption was fully reversible, and the sensors could be fully recovered. With the technology presented, the manufacturing of gas sensors is simple, fast and cost-effective, and suitable for energy-effective portable equipment for real-time environmental monitoring of NO2.

  13. Structural study of TiO2-based transparent conducting films

    International Nuclear Information System (INIS)

    Hitosugi, T.; Yamada, N.; Nakao, S.; Hatabayashi, K.; Shimada, T.; Hasegawa, T.

    2008-01-01

    We have investigated microscopic structures of sputter and pulsed laser deposited (PLD) anatase Nb-doped TiO 2 transparent conducting films, and discuss what causes the degradation of resistivity in sputter-deposited films. Cross-sectional transmission electron microscope and polarized optical microscope images show inhomogeneous intragrain structures and small grains of ∼10 μm in sputter-deposited films. From comparison with PLD films, these results suggest that homogeneous film growth is the important factor to obtain highly conducting sputter-deposited film

  14. Layer-by-layer assembled TiO2 films with high ultraviolet light-shielding property

    International Nuclear Information System (INIS)

    Li, Xiaozhou; Wang, Lin; Pei, Yuxin; Jiang, Jinqiang

    2014-01-01

    Ultraviolet (UV) B is hazardous to human, plants and animals. With the rapid growth of ozone holes over the earth, the exploration of optical materials that can cut off harmful UV radiation is important. In this work, fusiform TiO 2 nanoparticles were synthesized by a hydrothermal synthesis method. The thin films assembled with TiO 2 nanoparticles and oppositely charged polyelectrolytes were fabricated via a layer-by-layer assembly method. The fabrication of poly(ethylene imine) (PEI)/TiO 2 multilayer films was verified by ultraviolet–visible spectra measurements, scanning electron microscopy and atomic force microscopy. The as-prepared PEI/TiO 2 multilayer films can effectively absorb harmful UVB light and filter off visible light. Most importantly, the PEI/TiO 2 films can be deposited directly on various kinds of hydrophilic substrates such as quartz, glass, silicon and hydrophobic substrates such as polystyrene, polypropylene, polyethylene and polymethyl methacrylate when the hydrophilic substrates were modified to obtain a hydrophilic surface. - Highlights: • PEI/TiO 2 films were fabricated via a layer-by-layer self-assembly method. • The films could effectively absorb harmful UVB light and filter off visible light. • The films could deposit directly on either hydrophilic or hydrophobic substrates

  15. Improved diode performance of Ag nanoparticle dispersed Er doped In2O3 film

    Science.gov (United States)

    Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Mondal, Aniruddha

    2018-04-01

    Ag nanoparticle(NP) dispersedEr doped In2O3 film was prepared by sol-gel method followed by thermal evaporation cum glancing angle deposition technique. The Schottky contact based devicecontaining Ag NPs shows ideality factor of ˜180 at 10 K and ˜5 at 300 K, which is lesser as compared to the device that does not contain Ag NPs. The lower ideality factor value all over the temperature range makes the diode more reliable.

  16. Preparation of TiO2 thin films from autoclaved sol containing needle-like anatase crystals

    International Nuclear Information System (INIS)

    Ge Lei; Xu Mingxia; Fang Haibo; Sun Ming

    2006-01-01

    A new inorganic sol-gel method was introduced in this paper to prepare TiO 2 thin films. The autoclaved sol with needle-like anatase crystals was synthesized using titanyl sulfate (TiOSO 4 ) and peroxide (H 2 O 2 ) as starting materials. The transparent anatase TiO 2 thin films were prepared on glass slides from the autoclaved sol by sol-gel dip-coating method. A wide range of techniques such as Fourier transform infrared transmission spectra (FT-IR), X-ray diffraction (XRD), thermogravimetry-differential thermal analysis (TG-DTA), scanning electron microscopes, X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectrum were applied to characterize the autoclaved sol and TiO 2 thin films. The results indicate that the autoclaved sol is flavescent, semitransparent and stable at room temperature. The anatase crystals of TiO 2 films connect together to form net-like structure after calcined and the films become uniform with increasing heating temperature. The surface of the TiO 2 films contain not only Ti and O elements, but also a small amount of N and Na elements diffused from substrates during heat treatment. The TiO 2 films are transparent and their maximal light transmittances exceed 80% under visible light region

  17. Formation of high-Tc YBa2Cu3O(7-delta) films on Y2BaCuO5 substrate

    Science.gov (United States)

    Wang, W. N.; Lu, H. B.; Lin, W. J.; Yao, P. C.; Hsu, H. E.

    1988-07-01

    High-Tc superconducting YBa2Cu3O(7-delta) films have been successfully prepared on green Y2BaCuO5 (2115) ceramic substrate. The films have been formed by RF sputtering and screen printing with post annealing at 925 C. Regarding superconducting features, the sharp resistivity drop with Tc onset around 95 K (midpoint 84 K) and 99 K (midpoint 89 K) has been observed for RF sputtered and printed films respectively. Both films show the excellent adhesion towards the 2115 substrate. Powder X-ray diffraction profiles indicate a majority of 1237 phase with preferred orientation for RF sputtered thin film.

  18. Optoelectronic properties of SnO2 thin films sprayed at different deposition times

    International Nuclear Information System (INIS)

    Abdelkrim, Allag; Rahmane, Saâd; Abdelouahab, Ouahab; Hafida, Attouche; Nabila, Kouidri

    2016-01-01

    This article presents the elaboration of tin oxide (SnO 2 ) thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film properties are investigated. The films are characterized by several techniques such as x-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible (UV–Vis) transmission, and four-probe point measurements, and the results suggest that the prepared films are uniform and well adherent to the substrates. X-ray diffraction (XRD) patterns show that SnO 2 film is of polycrystal with cassiterite tetragonal crystal structure and a preferential orientation along the (110) plane. The calculated grain sizes are in a range from 32.93 nm to 56.88 nm. Optical transmittance spectra of the films show that their high transparency average transmittances are greater than 65% in the visible region. The optical gaps of SnO 2 thin films are found to be in a range of 3.64 eV–3.94 eV. Figures of merit for SnO 2 thin films reveal that their maximum value is about 1.15 × 10 −4 Ω −1 at λ = 550 nm. Moreover, the measured electrical resistivity at room temperature is on the order of 10 −2 Ω·cm. (paper)

  19. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  20. A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

    Science.gov (United States)

    Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

    2013-03-01

    Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

  1. Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bao-jia, E-mail: bjia_li@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, Ming [The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2014-01-30

    Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO{sub 2})/FTO bilayer films. Large and densely arranged grains were observed on all TiO{sub 2}/FTO bilayer films. The presence of TiO{sub 2} tetragonal rutile phase in the TiO{sub 2}/FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO{sub 2}/FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10{sup −2} Ω{sup −1}, higher than 1.78 × 10{sup −2} Ω{sup −1} for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO{sub 2}/FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10{sup −2} Ω{sup −1}, indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.

  2. Optical transparency and mechanical properties of semi-refined iota carrageenan film reinforced with SiO2 as food packaging material

    Science.gov (United States)

    Aji, Afifah Iswara; Praseptiangga, Danar; Rochima, Emma; Joni, I. Made; Panatarani, Camellia

    2018-02-01

    Food packaging is important for protecting food from environmental influences such as heat, light, water vapor, oxygen, dirt, dust particles, gas emissions and so on, which leads to decrease the quality of food. The most widely used type of packaging in the food industry is plastic which is made from synthetic polymers and takes hundreds of years to biodegrade. Recently, food packaging with high bio-degradability is being developed using biopolymer combined with nanoparticles as reinforcing agent (filler) to improve its properties. In this study, semi-refined iota carrageenan films were prepared by incorporating SiO2 nanoparticles as filler at different concentrations (0%, 0.5%, 1.0% and 1.5% w/w carrageenan) using solution casting method. The optical transparency and mechanical properties (tensile strength and elongation at break) of the films were analyzed. The results showed that incorporation of SiO2 nanoparticles to carrageenan matrix on optical transparency of the films. For the mechanical properties, the highest tensile strength was found for incorporation of 0.5% SiO2, while the elongation at break of the films improved with increasing SiO2 concentration.

  3. Analysis of multiferroic properties in BiMnO3 thin films

    International Nuclear Information System (INIS)

    Grizalez, M; Mendoza, G A; Prieto, P

    2009-01-01

    Textured BiMnO 3 [111] thin films on SrTiO 3 (100) and Pt/TiO 2 /SiO 2 substrates were grown via r.f. magnetron sputtering (13.56 MHz). The XRD spectra confirmed a monoclinic structure and high-quality textured films for the BiMnO 3 films. The films grown on SrTiO 3 (100) showed higher crystalline quality than those developed on Pt/TiO 2 /SiO 2 . Through optimized oxygen pressure of 5x10 -2 mbar during the r.f. sputtering deposition, the crystalline orientation of the BiMnO 3 film was improved with respect to the previously reported value of 2x10 -1 mbar. The values of spontaneous polarization (P s ), remnant polarization (P r ), and coercive field (F c ) from ferroelectric hysteresis loops (P-E) at different temperatures were also obtained. Samples with higher crystalline order revealed better dielectric properties (high P s and P r values and a low F c ). For films on both types of substrates, the ferroelectric behavior was found to persist up to 400K. Measurements at higher temperatures were difficult to obtain given the increased conductivity of the films. Magnetic hysteresis loops from 5K to 120K were obtained for BiMnO 3 films grown on SrTiO 3 and Pt/TiO 2 /SiO 2 substrates. The results suggested that the coexistence of the magnetic and electric phases persists up to 120K.

  4. Photoelectrocatalytic Degradation of Organic Pollutants in Aqueous Solution Using a Pt-TiO2 Film

    Directory of Open Access Journals (Sweden)

    Chun He

    2009-01-01

    Full Text Available A series of Pt-TiO2 films with nanocrystaline structure was prepared by a procedure of photodeposition and subsequent dip-coating. The Pt-TiO2 films were characterized by X-ray diffraction, scanning electronic microscope, electrochemical characterization to examine the surface structure, chemical composition, and the photoelectrochemical properties. The photocatalytic activity of the Pt-TiO2 films was evaluated in the photocatalytic (PC and photoelectrocatalytic (PEC degradation of formic acid in aqueous solution. Compared with a TiO2 film, the efficiency of formic acid degradation using the Pt-TiO2 films was significantly higher in both the PC and PEC processes. The enhancement is attributed to the action of Pt deposits on the TiO2 surface, which play a key role by attracting conduction band photoelectrons. In the PEC process, the anodic bias externally applied on the illuminated Pt-TiO2 films can further drive away the accumulated photoelectrons from the metal deposits and promote a process of interfacial charge transfer.

  5. Studies of LPCVD and anodised TiO2 thin films and their photoelectrocatalytic photochemical properties for destruction of organic effluents

    International Nuclear Information System (INIS)

    Tian, F.

    2001-01-01

    TiO 2 thin films prepared by CVD and anodisation methods and their applications for the photoelectrocatalytic and photocatalytic destruction of organic effluents are described in this thesis. The theoretical background of CVD, photoelectrocatalysis (PEC) and photocatalysis (PC) is introduced in Chapter 1. This chapter also contains an intensive literature review about TiO 2 thin film preparation, mainly by CVD, and about PEC and PC destruction of organic effluents by TiO 2 thin films. The experimental methods, which include CVD reactors, PEC cells and film characterisation and chemical analysis, are described in Chapter 2. The results for TiO 2 films deposited by LPCVD on SnO 2 coated glass using either TTIP or TTB precursors in the presence of O 2 , with or without water as a reagent, are discussed in Chapter 3 for a small CVD reactor and Chapter 4 for a large reactor. The effects of precursor, water and annealing on the crystal structure of the films have been investigated and compared. It was found that phase transition temperatures for changes from amorphous to anatase and anatase to rutile with TTIP were higher than those obtained with TTB. Water also had an effect by decreasing the temperature for depositing crystalline films. The other kind of TiO 2 films prepared by anodisation of titanium mesh was studied and the results are presented in Chapter 5. PEC or PC destruction of MPA, RDX and 4-CP have been studied using TiO 2 thin film anodes in small and large PEC reactors which are described in Chapter 6 and Chapter 7, respectively. PC destruction rates of organics are found to be improved significantly with an applied potential; i.e. by a PEC process. The effects of film properties, such as film crystallinity, thickness and film type on the PEC and PC efficiencies have been investigated. It was found that the different behaviour of films in PEC processes probably was due to surface effects rather than internal electric field differences. The extent of PEC and

  6. Comparison of Ba2YCu3O7-δ films on NdGaO3 and LaAlO3

    International Nuclear Information System (INIS)

    Phillips, J.M.; Siegal, M.P.; Perry, C.L.; Marshall, J.H.

    1991-01-01

    This paper studies the properties of 100 nm films of Ba 2 YCu 3 O 7-δ (BYCO) grown on LaAlO 3 (100) and NdGaO 3 (100) by co- evaporation of Cy, Y, and BaF 2 followed by a two-stage anneal ex situ. The authors find that the structural properties of the films on both substrates are optimized when the maximum temperature of the anneal is 900 degrees C, while the superconducting properties are slightly better if the maximum temperature does not exceed 875 degrees C. Films on LaAlO 3 can tolerate a longer time at the maximum annealing temperature than can films on NdGaP 3 . The authors postulate that this is due to a reaction between Ga in the NdGaO 3 and at least one of the constituents of the BYCO film (probably Y)

  7. Improved osteoblast response to UV-irradiated PMMA/TiO2 nanocomposites with controllable wettability.

    Science.gov (United States)

    Shayan, Mahdis; Jung, Youngsoo; Huang, Po-Shun; Moradi, Marzyeh; Plakseychuk, Anton Y; Lee, Jung-Kun; Shankar, Ravi; Chun, Youngjae

    2014-12-01

    Osteoblast response was evaluated with polymethylmethacrylate (PMMA)/titanium dioxide (TiO2) nanocomposite thin films that exhibit the controllable wettability with ultraviolet (UV) treatment. In this study, three samples of PMMA/TiO2 were fabricated with three different compositional volume ratios (i.e., 25/75, 50/50, and 75/25) followed by UV treatment for 0, 4, and 8 h. All samples showed the increased hydrophilicity after UV irradiation. The films fabricated with the greater amount of TiO2 and treated with the longer UV irradiation time increased the hydrophilicity more. The partial elimination of PMMA on the surface after UV irradiation created a durable hydrophilic surface by (1) exposing higher amount of TiO2 on the surface, (2) increasing the hydroxyl groups on the TiO2 surface, and (3) producing a mesoporous structure that helps to hold the water molecules on the surface longer. The partial elimination of PMMA on the surface was confirmed by Fourier transform infrared spectroscopy. Surface profiler and atomic force microscopy demonstrated the increased surface roughness after UV irradiation. Both scanning electron microscopy and energy-dispersive X-ray spectroscopy demonstrated that particles containing calcium and phosphate elements appeared on the 8 h UV-treated surface of PMMA/TiO2 25/75 samples after 4 days soaking in Dulbecco's Modified Eagle Medium. UV treatment showed the osteoblast adhesion improved on all the surfaces. While all UV-treated hydrophilic samples demonstrated the improvement of osteoblast cell adhesion, the PMMA/TiO2 25/75 sample after 8 h UV irradiation (n = 5, P value = 0.000) represented the best cellular response as compared to other samples. UV-treated PMMA/TiO2 nanocomposite thin films with controllable surface properties represent a high potential for the biomaterials used in both orthopedic and dental applications.

  8. Overgrowth of cracks in YBa{sub 2}Cu{sub 3}O{sub 6+δ}-thin films grown on SrTiO{sub 3}- and Al{sub 2}O{sub 3}-substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ackermann, Kai; Haenisch, Jens; Holzapfel, Bernhard [Institut fuer Technische Physik, Karlsruher Institut fuer Technologie, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2016-07-01

    High temperature superconducting materials like REBCO-thin films offer a wide range of applications like superconducting transformers, cables, coils or fault current limiters. Although the number of applications is increasing the REBCO-coated conductor length is still limited due to substrate and thin film fabrication defects. In order to improve the manufacturing processes of REBCO-coated conductors the growth behavior of REBCO-thin films on defective or broken substrate surfaces has to be understood. Therefore we investigated the structural and electronic properties of YBCO-thin films grown on cracked SrTiO{sub 3}- and Al{sub 2}O{sub 3}-substrates. The YBCO-films were prepared by using metalorganic (MOD) and pulsed laser deposition (PLD). Structural and electronic properties of the YBCO-films were investigated by using x-ray diffractometry, atomic force microscopy, scanning electron microscopy and temperature- and magnetic field-dependent conductivity measurements.

  9. SnO{sub 2}/reduced graphene oxide composite films for electrochemical applications

    Energy Technology Data Exchange (ETDEWEB)

    Bondarenko, E.A. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V., E-mail: mazanikalexander@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Korolik, O.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)

    2015-12-15

    Highlights: • SnO{sub 2}/GO composites with mass fraction of carbon phase 0.01% ≤ w{sub C} ≤ 80% have been formed. • 400 °C annealing was applied for GO reduction in the composites. • SnO{sub 2}/rGO composites demonstrate a high electrocatalytic activity in anodic processes. • Exchange current density grows linearly with carbon phase concentration at w{sub C} ≤ 10%. - Abstract: SnO{sub 2}/GO (GO is graphene oxide) composite films with GO mass fraction w{sub C} ranging from 0.01 to 80% have been prepared using colloidal solutions. Heat treatment of SnO{sub 2}/GO films in Ar atmosphere at 400 °C leads to GO reduction accompanied by partial exfoliation and decreasing of the particle thickness. SnO{sub 2}/rGO (rGO is reduced GO) film electrodes demonstrate a high electrocatalytic activity in the anodic oxidation of inorganic (iodide-, chloride-, sulfite-anions) and organic (ascorbic acid) substances. The increase of the anodic current in these reactions is characterized by overpotential inherent to the individual rGO films and exchange current density grows linearly with rGO concentration at w{sub C} ≤ 10% indicating that the rGO particles in composites act as sites of electrochemical process. The SnO{sub 2}/rGO composite films, in which the chemically stable oxide matrix encapsulates the rGO inclusions, can be considered as a promising material for applied electrochemistry.

  10. Magnetic and structural study of Cu-doped TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Torres, C.E. Rodriguez [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina)], E-mail: torres@fisica.unlp.edu.ar; Golmar, F. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Cabrera, A.F.; Errico, L.; Navarro, A.M. Mudarra; Renteria, M.; Sanchez, F.H. [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata-CONICET, CC 67, 1900 La Plata (Argentina); Duhalde, S. [Laboratorio de Ablacion Laser, Facultad de Ingenieria, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina)

    2007-10-31

    Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO{sub 2} thin films were grown by pulsed laser deposition technique on LaAlO{sub 3} substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO{sub 2}. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO{sub 2}.

  11. Sensors of the gas CO in thin film of SnO2:Cu

    International Nuclear Information System (INIS)

    Tirado G, S.; Sanchez Z, F. E.

    2011-10-01

    Thin films of SnO 2 :Cu with different thickness, were deposited on soda-lime glass substrates and prepared by the Sol-gel process and repeated immersion. The sensor properties of these films to the gas CO for the range of 0-200 ppm in the gas concentration and operating to temperatures of 23, 100, 200, and 300 C were studied. Prepared films of pure SnO 2 were modified superficially with 1, 3, 5 and 10 layers of the catalyst Cu (SnO 2 :Cu) with the purpose of studying the effect on the sensor capacity of the gas CO by part of the films SnO 2 :Cu. Using the changes in the electric properties of the films with the incorporation of the different copper layers and experimental conditions, the sensor modifications of the gas CO were evaluated. To complete this study, was realized a characterization of the superficial morphology of the films by scanning electron microscopy and atomic force microscopy, equally was studied their structure and their electric and optical properties. (Author)

  12. Improved performance of dye-sensitized solar cell based on TiO_2 photoanode with FTO glass and film both treated by TiCl_4

    International Nuclear Information System (INIS)

    Li, Jinlun; Zhang, Haiyan; Wang, Wenguang; Qian, Yannan; Li, Zhenghui

    2016-01-01

    The dye-sensitized solar cell (DSSC) based on TiO_2 photoanode with FTO glass and TiO_2 film co-treated by TiCl_4 were fabricated. The effects of TiCl_4 treatment on the photovoltaic performance of the DSSCs were investigated. TiCl_4 treatment of the FTO glass resulted in the formation of a compact TiO_2 thin layer on its surface, which could increase the electron collection efficiency. Meanwhile, TiCl_4 treatment of the TiO_2 film could fill gaps between nanoparticles in the TiO_2 film, leading to better electron transfer. These advantages make the DSSC exhibit a highest conversion efficiency of 3.34% under a simulated solar irradiation with an intensity of 100 mW/cm"2 (1 sun), increased by 38% compared with that of the untreated DSSC.

  13. Visible emission from Er-doped SnO2 thin films deposited by sol-gel Emissão no visível de filmes finos, depositados via sol-gel, de SnO2 dopados com Er

    Directory of Open Access Journals (Sweden)

    L. P. Ravaro

    2007-06-01

    Full Text Available Emission from Er-doped SnO2 thin film deposited via sol-gel by the dip coating technique is obtained in the range 500-700 nm with peak at 530 nm (green. Electron-hole generation in the tin dioxide matrix is used to promote the rare-earth ion excitation. Evaluation of crystallite dimensions through X-ray diffraction results leads to nanoscopic size, what could play a relevant role in the emission spectra. The electron-hole mechanism is also responsible for the excitation of the transition in the 1540 nm range in powders obtained from the same precursor solution of films. The thin film matrix presents a very useful shape for technological application, since it allows integration in optical devices and the application of electric fields to operate electroluminescent devices.Foi obtida emissão de filmes finos de SnO2 dopados com Er no intervalo 500-700 nm, com pico em 530 nm (verde. Esses filmes foram depositados pela técnica de molhamento via sol-gel. A geração de pares elétron-buraco na matriz de SnO2 é usada para promover a excitação do íon terra-rara. A avaliação do tamanho dos cristalitos por meio de resultados de difração de raios X indica dimensões nanoscópicas, o que pode ser relevante para a interpretação do espectro de emissão. O mecanismo de excitação elétron-buraco é também responsável pela excitação da transição no intervalo que inclui 1540 nm em pós obtidos da mesma solução precursora dos filmes. Filmes finos constituem um formato muito útil para aplicações tecnológicas, desde que permite integração em dispositivos ópticos e a aplicação de campos elétricos para operar dispositivos eletroluminescentes.

  14. Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

    Science.gov (United States)

    Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

    2018-04-01

    We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

  15. ZnO film for application in surface acoustic wave device

    International Nuclear Information System (INIS)

    Du, X Y; Fu, Y Q; Tan, S C; Luo, J K; Flewitt, A J; Maeng, S; Kim, S H; Choi, Y J; Lee, D S; Park, N M; Park, J; Milne, W I

    2007-01-01

    High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO 2 layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave

  16. Characterization of ultra-thin TiO2 films grown on Mo(112)

    International Nuclear Information System (INIS)

    Kumar, D.; Chen, M.S.; Goodman, D.W.

    2006-01-01

    Ultra-thin TiO 2 films were grown on a Mo(112) substrate by stepwise vapor depositing of Ti onto the sample surface followed by oxidation at 850 K. X-ray photoelectron spectroscopy showed that the Ti 2p peak position shifts from lower to higher binding energy with an increase in the Ti coverage from sub- to multilayer. The Ti 2p peak of a TiO 2 film with more than a monolayer coverage can be resolved into two peaks, one at 458.1 eV corresponding to the first layer, where Ti atoms bind to the substrate Mo atoms through Ti-O-Mo linkages, and a second feature at 458.8 eV corresponding to multilayer TiO 2 where the Ti atoms are connected via Ti-O-Ti linkages. Based on these assignments, the single Ti 2p 3/2 peak at 455.75 eV observed for the Mo(112)-(8 x 2)-TiO x monolayer film can be assigned to Ti 3+ , consistent with our previous results obtained with high-resolution electron energy loss spectroscopy

  17. Phase transformations in sputter-deposited W-doped TiO2 films during annealing in air

    International Nuclear Information System (INIS)

    Saladukhin, I. A.; Abadias, G.

    2013-01-01

    Pure and tungsten-doped TiO 2 films are characterized as amorphous in the as-deposited state by XRD. A crystallization of titanium dioxide occurs during their annealing in air. Depending on the tungsten and nitrogen doping level, anatase or rutile phase formation is observed. Both of these phases are thermally stable in all interval of the temperatures used during annealing. Phase composition and lattice parameter analysis indicates on the formation of substitutional Ti 1 -xW x O 2 films. N-doped Ti 0 .75W 0 .25O 2 film is more resistant against high-temperature oxidation as compared to Ti 0 .74W 0 .26O 2 film and, especially, as compared to Ti 0 .60W 0 .40O 2 film. (authors)

  18. Pt Catalyst Supported within TiO2 Mesoporous Films for Oxygen Reduction Reaction

    International Nuclear Information System (INIS)

    Huang, Dekang; Zhang, Bingyan; Bai, Jie; Zhang, Yibo; Wittstock, Gunther; Wang, Mingkui; Shen, Yan

    2014-01-01

    In this study, dispersed Pt nanoparticles into mesoporous TiO 2 thin films are fabricated by a facile electrochemical deposition method as electro-catalysts for oxygen reduction reaction. The mesoporous TiO 2 thin films coated on the fluorine-doped tin oxide glass by screen printing allow a facile transport of reactants and products. The structural properties of the resulted Pt/TiO 2 electrode are evaluated by field emission scanning electron microscopy, energy dispersive X-ray spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy. Cyclic voltammetry measurements are performed to study the electrochemical properties of the Pt/TiO 2 electrode. Further study demonstrates the stability of the Pt catalyst supported within TiO 2 mesoporous films for the oxygen reduction reaction

  19. Excellent Brightness with Shortening Lifetime of Textured Zn2SiO4:Mn2+ Phosphor Films on Quartz Glass

    Science.gov (United States)

    Park, Jehong; Park, Kwangwon; Lee, Jaebum; Kim, Jongsu; Kim, Seongsin Margaret; Kung, Patrick

    2010-04-01

    Green-emissive textured Zn2SiO4:Mn2+ phosphor films were fabricated by the thermal diffusion of ZnO:Mn on quartz glass. The Zn2SiO4:Mn2+ phosphor films became textured along several hexagonal directions and their chemical composition was continuously graded at the interface. The decay time of Mn2+ was as short as 4.4 ms, and the optical transition probability of the films defined as the inverse of decay time showed a strong correlation with film texture degree as a function of annealing temperature. The brightest Zn2SiO4:Mn2+ film showed a photoluminescent brightness as high as 65% compared with a commercial Zn2SiO4:Mn2+ phosphor powder screen and a maximum absolute transparency of 70%. These excellent optical properties are explained by the combination of the unique textured structure and continuous grading of the Zn2SiO4:Mn2+ chemical composition at the interface.

  20. Unexpected large room-temperature ferromagnetism in porous Cu{sub 2}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xue [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

    2015-05-15

    Porous Cu{sub 2}O films have been fabricated on porous anodic alumina substrates using DC-reactive magnetron sputtering with pure Cu targets, and unexpectedly large room temperature ferromagnetism has been observed in the films. The maximum saturation magnetic moment along the out-of-plane direction was as high as 94 emu/cm{sup 3}. Photoluminescence spectra show that the ferromagnetism originates with oxygen vacancies. The ferromagnetism could be adjusted by changing the concentration of oxygen vacancies through annealing in an oxygen atmosphere. These observations suggest that the origin of the ferromagnetism is due to coupling between oxygen vacancies with local magnetic moments in the porous Cu{sub 2}O films, which can occur either directly through exchange interactions between oxygen vacancies, or through the mediation of conduction electrons. Such a ferromagnet without the presence of any ferromagnetic dopant may find applications in spintronic devices. - Highlights: • Porous Cu{sub 2}O films were deposited on porous anodic alumina (PAA) substrates. • Significant room-temperature ferromagnetism has been observed in porous Cu{sub 2}O films. • Ferromagnetism of Cu{sub 2}O films exhibited different magnetic signals with the field. • The saturation magnetization is 94 emu/cm{sup 3} with an out-of-plane.

  1. Processing and thin film formation of TiO{sub 2}-Pt nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Es-Souni, M.; Kartopu, G.; Habouti, S.; Piorra, A.; Solterbeck, C.H. [Institute for Materials and Surface Technology, Kiel University of Applied Sciences, Grenzstr. 3, 24149 Kiel (Germany); Es-Souni, Mar.; Brandies, H.F. [Faculty of Dentistry, Christian-Albrecht University, Kiel (Germany)

    2008-02-15

    Thin films of TiO{sub 2}-Pt nanocomposites containing 4 at% Pt have been processed via spin-coating. Film characterization involved XRD, Raman as well as XPS and scanning surface potential microscopy (SSPM). After annealing at 500 C the thin films consisted of nanocrystalline anatase and a few nm Pt nanoclusters. Annealing at 600 C resulted in the formation of a high volume fraction of rutile, {proportional_to}70%, and a coarsening of the microstructure, including Pt nanoparticles which attained a mean particle size of up to 11 nm. These results contrasted with those of pure TiO{sub 2} films obtained at 600 C which showed only a limited amount of rutile formation, namely 9%. Raman spectra of Pt-containing samples exhibited a fluorescence emission, as background to the Raman features, which was attributed to photoinduced luminescence from Pt nanoparticles supported by their surface plasmon resonance. Emission intensity being much higher in 600 C film indicated a difference between the two films in terms of the (Pt) particle size and crystallinity, in agreement with the XRD results. XPS investigations revealed different oxidation states of Pt at the surface and in the film interior. The spectra suggested a slight oxidation of Pt at the surface while mainly metallic Pt was revealed in the film interior. The morphology and distribution of the Pt nanoparticles in the films annealed at 600 C were investigated using SSPM. Discrete Pt nanoparticles, mainly distributed in the vicinity of TiO{sub 2} grain boundaries were revealed. Nanocomposite film formation, Pt distribution and morphology are explained in terms of the limited solubility of Pt in the TiO{sub 2} lattice and its higher surface energy in comparison to that of TiO{sub 2}. Both effects are believed to lead to the formation of Pt nanoparticles at the (anatase or rutile) grain boundaries. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Enhanced dielectric properties of thin Ta{sub 2}O{sub 5} films grown on 65 nm SiO{sub 2}/Si

    Energy Technology Data Exchange (ETDEWEB)

    Kolkovsky, Vl.; Kurth, E.; Kunath, C. [IPMS Fraunhofer, Dresden, Maria-Reiche Str. 2, 01109 Dresden (Germany)

    2016-12-15

    The structural and electrical properties of Ta{sub 2}O{sub 5}/65 nm SiO{sub 2} structures with different thicknesses of Ta{sub 2}O{sub 5} varying in the range of 0-260 nm are investigated. We find that the stack structures grown by the magnetron sputtering technique and annealed at 1220 K in O and Ar atmosphere show one of the highest dielectric constant of Ta{sub 2}O{sub 5}(about 64) among those previously reported in the literature. The structure of the annealed polycrystalline Ta{sub 2}O{sub 5} films is orthorhombic, as obtained from X-ray diffraction measurements and we do not observe any preferential orientation of the annealed films. The Ta{sub 2}O{sub 5} films contain positively charged defects which become mobile at around 400 K and they are tentatively correlated with the oxygen vacancies. The leakage current in the stack structures is a factor of 20 higher compared to that in thin layers with 65 nm SiO{sub 2}. The conduction mechanism in the stack structures can be described by the Fowler-Nordheim model with a barrier height that decreases slightly (<10%) as a function of the thickness of the films. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Visible photoenhanced current-voltage characteristics of Au : TiO2 nanocomposite thin films as photoanodes

    International Nuclear Information System (INIS)

    Naseri, N; Amiri, M; Moshfegh, A Z

    2010-01-01

    In this investigation, the effect of annealing temperature and concentration of gold nanoparticles on the photoelectrochemical properties of sol-gel deposited Au : TiO 2 nanocomposite thin films is studied. Various gold concentrations have been added to the TiO 2 thin films and their properties are compared. All the deposited samples are annealed at different temperatures. The optical density spectra of the films show the formation of gold nanoparticles in the films. The optical bandgap energy of the Au : TiO 2 films decreases with increasing Au concentration. The crystalline structure of the nanocomposite films is studied by x-ray diffractometry indicating the formation of gold nanocrystals in the anatase TiO 2 nanocrystalline thin films. X-ray photoelectron spectroscopy reveals that the presence of gold in the metallic state and the formation of TiO 2 are stoichiometric. The photoelectrochemical properties of the Au : TiO 2 samples are characterized using a compartment cell containing H 2 SO 4 and KOH as cathodic and anodic electrolytes, respectively. It is found that the addition of Au nanoparticles in TiO 2 films enhances the photoresponse of the layer and the addition of gold nanocrystals with an optimum value of 5 mol% resulted in the highest photoelectrochemical activity. Moreover, the photoresponse of the samples is also enhanced with an increase in the annealing temperature.

  4. Improving microstructured TiO{sub 2} photoanodes for dye sensitized solar cells by simple surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Saquib; Birnie, Dunbar P. III [Department of Materials Science and Engineering, Rutgers, The State University of New Jersey, 607 Taylor Road, Piscataway, NJ 08854 (United States); Du Pasquier, Aurelien [Energy Storage Research Group (ESRG), Rutgers, The State University of New Jersey, 671 US Highway 1, North Brunswick, NJ 08902 (United States); Asefa, Tewodros [Department of Chemistry and Chemical Biology and Department of Chemical and Biochemical Engineering, Rutgers, The State University of New Jersey, 98 Brett Road, Piscataway, NJ 08854 (United States)

    2011-10-15

    TiCl{sub 4} surface treatment studies of porous electrode structure of TiO{sub 2} aggregates synthesized using an acidic precursor and CTAB as a templating agent are carried out in order to understand and improve upon recombination kinetics in the photonanode film matrix, together with enhancing the intrinsic light scattering. The key beneficial features of the photoanode included high surface roughness, necessary for superior dye adsorption, nanocrystallite aggregates leading to diffuse light scattering within the film matrix, and a hierarchical macro- and mesopore structure allowing good access of electrolyte to the dye, thereby assisting in dye regeneration (enhanced charge transfer). Pre-treatment of the TiO{sub 2} electrodes reduced recombination at the fluorine-doped tin oxide (FTO)/electrolyte interface. The post-treatment study showed enhanced surface roughness through the deposition of a thin overlayer of amorphous TiO{sub 2} on the film structure. This led to a notable improvement in both dye adsorption and inherent light scattering effects by the TiO{sub 2} aggregates, resulting in enhanced energy harvesting. The thin TiO{sub 2} overlayer also acted as a barrier in a core-shell configuration within the porous TiO{sub 2} matrix, and thereby reduced recombination. This allowed the hierarchical macro- and mesoporosity of the film matrix to be utilized more effectively for enhanced charge transfer during dye regeneration. Post-treatment of the aggregated TiO{sub 2} matrix resulted in a 36% enhancement in power conversion efficiency from 4.41% of untreated cells to 6.01%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

    International Nuclear Information System (INIS)

    Zhu, J; Li, T L; Pan, B; Zhou, L; Liu, Z G

    2003-01-01

    ZrO 2 thin films were fabricated in O 2 ambient and in N 2 ambient by pulsed laser deposition (PLD), respectively. X-ray diffraction revealed that films prepared at 400 deg. C remained amorphous. The dielectric properties of amorphous ZrO 2 films were investigated by measuring the capacitance-frequency characteristics of Pt/ZrO 2 /Pt capacitor structures. The dielectric constant of the films deposited in N 2 ambient was larger than that of the films deposited in O 2 ambient. The dielectric loss was lower for films prepared in N 2 ambient. Atom force microscopy investigation indicated that films deposited in N 2 ambient had smoother surface than films deposited in O 2 ambient. Capacitance-voltage and current-voltage characteristics were studied. The equivalent oxide thickness (EOT) of films with 6.6 nm physical thickness deposited in N 2 ambient is lower than that of films deposited in O 2 ambient. An EOT of 1.38 nm for the film deposited in N 2 ambient was obtained, while the leakage current density was 94.6 mA cm -2 . Therefore, ZrO 2 thins deposited in N 2 ambient have enhanced dielectric properties due to the incorporation of nitrogen which leads to the formation of Zr-doped nitride interfacial layer, and is suggested to be a potential material for alternative high-k (high dielectric constant) gate dielectric applications

  6. X-ray photoelectron spectroscopic and electrochemical impedance spectroscopic analysis of RuO_2-Ta_2O_5 thick film pH sensors

    International Nuclear Information System (INIS)

    Manjakkal, Libu; Cvejin, Katarina; Kulawik, Jan; Zaraska, Krzysztof; Socha, Robert P.; Szwagierczak, Dorota

    2016-01-01

    The paper reports on investigation of the pH sensing mechanism of thick film RuO_2-Ta_2O_5 sensors by using X-ray photoelectron spectroscopy (XPS) and electrochemical impedance spectroscopy (EIS). Interdigitated conductimetric pH sensors were screen printed on alumina substrates. The microstructure and elemental composition of the films were examined by scanning electron microscopy and energy dispersive spectroscopy. The XPS studies revealed the presence of Ru ions at different oxidation states and the surface hydroxylation of the sensing layer increasing with increasing pH. The EIS analysis carried out in the frequency range 10 Hz–2 MHz showed that the electrical parameters of the sensitive electrodes in the low frequency range were distinctly dependent on pH. The charge transfer and ionic exchange occurring at metal oxide-solution interface were indicated as processes responsible for the sensing mechanism of thick film RuO_2-Ta_2O_5 pH sensors. - Highlights: • Conductimetric pH sensors with RuO_2-Ta_2O_5 thick film electrodes were developed. • Microstructure and elemental composition of the films were examined by SEM and EDX. • Sensing film composition and hydroxylation were studied by XPS as a function of pH. • Electrochemical reactions at oxide-solution interface were analyzed by EIS method. • Impact of solution pH, electrode composition and sintering temperature was studied.

  7. Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Yong-Qing; Chang, Chia-Wei; Yao, Chih-Kai; Liao, Jiunn-Der

    2013-01-01

    10-nm-thick atomic layer deposited HfO 2 films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi x O y induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi x O y with increasing annealing temperatures. The existence of HfSi x O y broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi x O y induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO 2 films were assessed by nano-scratch and indentation. ► Scratch depth of HfO 2 films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO 2 films increased with the increase of annealing temperatures

  8. Phase transitions in LiCoO2 thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Huang Rong; Hitosugi, Taro; Fisher, Craig A.J.; Ikuhara, Yumi H.; Moriwake, Hiroki; Oki, Hideki; Ikuhara, Yuichi

    2012-01-01

    Highlights: ► Epitaxial LiCoO 2 thin films were formed on the Al 2 O 3 (0 0 0 1) substrate by PLD at room temperature and annealed at 600 °C in air. ► The orientation relationship between film and substrate is revealed. ► Crystalline phases in the RT deposited and annealed thin films are clearly identified. ► Atomic level interface structure indicates an interface reaction during annealing. ► A phase transition mechanism from fully disordered LiCoO 2 to fully ordered LiCoO 2 is proposed. - Abstract: Microstructures of epitaxial LiCoO 2 thin films formed on the (0 0 0 1) surface of sapphire (α-Al 2 O 3 ) substrates by pulsed laser deposition at room temperature and annealed at 600 °C in air were investigated by a combination of selected-area electron diffraction, high-resolution transmission electron microscopy, spherical-aberration-corrected high-angle annular dark-field scanning transmission electron microscopy, and electron energy-loss spectroscopy. As-deposited LiCoO 2 thin films consisted of epitaxial grains of the fully cation-disordered phase (γ) with a cubic rock-salt structure. During annealing, this cubic-structured phase transformed into the fully ordered trigonal (α) phase oriented with its basal plane parallel to the surface of the sapphire substrate. Although overall the film appeared to be a single crystal, a small number of Co 3 O 4 grains were also observed in annealed thin films, indicating that some Li and O had been lost during processing. The atomically sharp interface between the film and substrate also became rougher during annealing, with step defects being formed, suggesting that a localized reaction occurred at the interface.

  9. Thermoluminescence on ZrO{sub 2} films with different dopants; Termoluminiscencia en peliculas de ZrO{sub 2} con distintos impurificantes

    Energy Technology Data Exchange (ETDEWEB)

    Ceron R, P. V.; Rivera M, T.; Ramos G, A. I.; Guzman M, J.; Montes R, E., E-mail: victceronr@hotmail.com [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Av. Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico)

    2015-10-15

    Full text: The metal oxides doped with rare earths have presented good thermoluminescent properties for certain wavelengths in the UV. With respect to zirconium oxide exist several studies in which were incorporated impurities and their properties as dosimeter in several regions of the electromagnetic spectrum were analyzed. Because of this background, in this material thermoluminescent glow curves induced by UV in films of ZrO{sub 2}:Eu and ZrO{sub 2}:Tb were studied for comparison with the response of the material doped with two rare earths (ZrO{sub 2}:Eu + Tb). Samples were deposited on glass by ultrasonic spray pyrolysis technique with different synthesis parameters. It was found that the strongest Tl response was to ZrO{sub 2} film doped with terbium (14 times more intense than the film of ZrO{sub 2}:Eu and 6 times the response of ZrO{sub 2}:Eu + Tb). (Author)

  10. SnO2 thin-films prepared by a spray-gel pyrolysis: Influence of sol properties on film morphologies

    International Nuclear Information System (INIS)

    Luyo, Clemente; Fabregas, Ismael; Reyes, L.; Solis, Jose L.; Rodriguez, Juan; Estrada, Walter; Candal, Roberto J.

    2007-01-01

    Nanostructured tin oxide films were prepared by depositing different sols using the so-called spray-gel pyrolysis process. SnO 2 suspensions (sols) were obtained from tin (IV) tert-amyloxide (Sn(t-OAm) 4 ) or tin (IV) chloride pentahydrate (SnCl 4 .5H 2 O) precursors, and stabilized with ammonia or tetraethylammonium hydroxide (TEA-OH). Xerogels from the different sols were obtained by solvent evaporation under controlled humidity. The Relative Gelling Volumes (RGV) of these sols strongly depended on the type of precursor. Xerogels obtained from inorganic salts gelled faster, while, as determined by thermal gravimetric analysis, occluding a significant amount of volatile compounds. Infrared spectroscopic analysis was performed on raw and annealed xerogels (300, 500 deg. C, 1 h). Annealing removed water and ammonium or alkyl ammonium chloride, increasing the number of Sn-O-Sn bonds. SnO 2 films were prepared by spraying the sols for 60 min onto glass and alumina substrates at 130 deg. C. The films obtained from all the sols were amorphous or displayed a very small grain size, and crystallized after annealing at 400 deg. C or 500 deg. C in air for 2 h. X-ray diffraction analysis showed the presence of the cassiterite structure and line broadening indicated a polycrystalline material with a grain size in the nanometer range. Results obtained from Scanning Electron Microscopy analysis demonstrated a strong dependence of the film morphology on the RGV of the sols. Films obtained from Sn(t-OAm) 4 showed a highly textured morphology based on fiber-shape bridges, whereas the films obtained from SnCl 4 .5H 2 O had a smoother surface formed by 'O-ring' shaped domains. Lastly, the performance of these films as gas sensor devices was tested. The conductance (sensor) response for ethanol as a target analyte was of the same order of magnitude for the three kinds of films. However, the response of the highly textured films was more stable with shorter response times

  11. Optical Thin Film Coating Having High Damage Resistance in Near-Stoichiometric MgO-Doped LiTaO3

    Science.gov (United States)

    Tateno, Ryo; Kashiwagi, Kunihiro

    2008-08-01

    Currently, High power and compact red, green, and blue (RGB) lasers are being considered for use in large screen laser televisions and reception-lobby projectors. Among these three laser sources, green semiconductor lasers are expensive and exhibit inferior performance in terms of the semiconductor material used, making it difficult to achieve a high output. In this study, we examined the use of our coating on MgO-doped LiTaO3, using a mirror coated with a multilayer film. Over a substrate, a Ta2O5 film was used to coat a high-refractive-index film layer, and a SiO2 film was used to coat a low-refractive-index film layer. To improve reflectivity, we designed the peak of the electric field intensity to be in the film layer with the low refractive index. As a result, the film endurance of 100 J/cm2 was obtained by one-on-one testing. With the nonlinear crystal material, the mirror without our coating exhibited a damage threshold of 33 J/cm2; however, after coating, this mirror demonstrated a higher damage threshold of 47 J/cm2. Thus, the film we fabricated using this technique is useful for improving the strength and durability of laser mirrors.

  12. Preparation of n-type semiconductor SnO2 thin films

    International Nuclear Information System (INIS)

    Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

    2013-01-01

    We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

  13. A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

    Energy Technology Data Exchange (ETDEWEB)

    Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

  14. Properties of SrBi2Nb2O9 thin films on Pt-coated Si

    International Nuclear Information System (INIS)

    Avila, R.E.; Navarro, P.O.; Martin, V. del C.; Fernandez, L.M.; Sylvester, G.; Retuert, P.J.; Gramsch, E.

    2002-01-01

    SrBi 2 Nb 2 O 9 powders and thin films, on Pt-coated Si, were synthesised by the sol-gel method. Three-layer thin films appear homogeneous down to the 100 nm scale, polycrystalline in the tetragonal Aurivillius phase, at a average thickness of 40 nm per layer. The index of refraction at the center of the visible range increases with the sintering temperature from roughly 2.1 (at 400 Centigrade) to 2.5 (at 700 Centigrade). The expression n 2 -1 increases linearly with the relative density of the thin films, in similar fashion as previous studies in PbTiO 3 thin films. The dielectric constant in quasistatic and high frequency (1 MHz) modes, is between 160 and 230. (Author)

  15. Effects of B2O3-Li2O additions on the dielectric properties of screen printing Ba0.6Sr0.4TiO3 thick films

    International Nuclear Information System (INIS)

    Zeng, Yike; Gao, Can; Zhang, Guangzu; Jiang, Shenglin

    2012-01-01

    Ba 0.6 Sr 0.4 TiO 3 (BST) thick films were fabricated on Al 2 O 3 substrate via the screen printing technology by using B 2 O 3 -Li 2 O additions as liquid-phase sintering aids. The effects of doping of B 2 O 3 and Li 2 CO 3 on the phase compositions, microstructures, and dielectric tunable properties of the thick films were investigated systematically. The X-ray diffraction patterns showed that BST diffraction peaks shifted toward higher angle with the B 2 O 3 -Li 2 O doping content, which indicated the substitution of B 3+ and Li + in Ba 2+ site. It was also found that the grain size and electrical properties of the thick film were strongly affected by the glass content. The grain size and the relative permittivity decreased obviously with the increase of B 2 O 3 -Li 2 O additive. In addition, for the thick film with 4.5 wt% glass content, optimized sintering, and electrical properties were obtained: the sintering temperature of 900 C, relative permittivity of 312 (at 10 kHz), dielectric loss of 0.0039, tunability of 16.2% (at 3 kV/mm). These good sintering and electrical properties indicate that BST thick film with B 2 O 3 -Li 2 O addition is benefit for the development of LTCC technology and tunable devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-01-01

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

  17. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2018-05-01

    Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

  18. AFM study of growth of Bi2Sr2-xLaxCuO6 thin films

    International Nuclear Information System (INIS)

    Haitao Yang; Hongjie Tao; Yingzi Zhang; Duogui Yang; Lin Li; Zhongxian Zhao

    1997-01-01

    c-axis-oriented Bi 2 Sr 1.6 La 0.4 CuO 6 thin films deposited on flat planes of (100)SrTiO 3 , (100)LaAlO 3 and (100)MgO substrates and vicinal planes (off-angle ∼ 6 deg.) of SrTiO 3 substrates by RF magnetron sputtering were studied by atomic force microscopy (AFM). T c of these films reached 29 K. Film thickness ranged from 15 nm to 600 nm. Two typical growth modes have been observed. AFM images of thin films on flat planes of substrates showed a terraced-island growth mode. By contrast, Bi-2201 thin films on vicinal planes of substrates showed a step-flow growth mode. The growth unit is a half-unit-cell in the c-axis for both growth modes. No example of spiral growth, which was thought to be the typical structure of YBCO thin films, was found in either of these kinds of thin films. (author)

  19. Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

    2015-06-24

    Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

  20. Relationship between vortex pinning properties and microstructure in Ba–Nb–O-doped YBa2Cu3Oy and ErBa2Cu3Oy films

    International Nuclear Information System (INIS)

    Haruta, Masakazu; Saura, Keisuke; Fujita, Natsuto; Ogura, Yuta; Ichinose, Ataru; Maeda, Toshihiko; Horii, Shigeru

    2013-01-01

    Highlights: •Y123 and Er123 films with Ba–Nb–O nanorods were prepared by PLD. •Nanorod morphology depended on growth temperature (T s ). •Nanorod morphology was different between the Y123 and Er123 with the same T s . •Distribution of local J c depended on nanorod morphology. -- Abstract: In-field J c s were improved by introducing Ba–Nb–O (BNO)-nanorods in YBa 2 Cu 3 O y (Y123) and ErBa 2 Cu 3 O y (Er123) films. Retention of J c against the magnetic field for the BNO-doped Er123 film was superior to that for the BNO-doped Y123 film. Sharp distribution of local critical current density originating from vortex pinning by nanorods with uniform morphology was demonstrated in the Er123 film. On the other hand, fluctuating microstructures of nanorods formed in the Y123 film prepared by the same deposition conditions. Moreover, different growth temperature dependences of nanorod morphology between the Y123 and Er123 films were clarified

  1. Effects of ZnO addition on electrical and structural properties of amorphous SnO2 thin films

    International Nuclear Information System (INIS)

    Ko, J.H.; Kim, I.H.; Kim, D.; Lee, K.S.; Lee, T.S.; Jeong, J.-H.; Cheong, B.; Baik, Y.J.; Kim, W.M.

    2006-01-01

    Amorphous Zn-Sn-O (ZTO) thin films with relative Zn contents (= [at.% Zn]/([at.% Zn] + [at.% Sn])) of 0, 0.08 and 0.27 were fabricated by co-sputtering of SnO 2 and ZnO targets at room temperature. Changes in structural, electrical and optical properties together with electron transport properties were examined upon post-annealing treatment in the temperature range from 200 to 600 deg. C in vacuum and in air. Characterization by XRD showed that an amorphous ZTO thin film crystallized at higher temperatures with increasing Zn content. Crystallized ZTO films with a relative Zn content of 0.27 might not contain a single SnO 2 phase which is observed in the films of the other compositions. Amorphous ZTO films showed decreasing electrical resistivities with increasing annealing temperature, having a minimum value of 1 x 10 - 3 Ω cm. Upon crystallization, the resistivities increased drastically, which was attributed to poor crystallinity of the crystallized films. All the ZTO films were found to be degenerate semiconductors with non-parabolic conduction bands having effective masses varying from 0.15 to 0.3 in the carrier concentration range of 6 x 10 18 to 2 x 10 2 cm - 3 . As for a ZTO film with a relative Zn content of 0.27, the degree of non-parabolicity was much lower compared with films of the other compositions, leading to a relatively stable mobility over a wide range of carrier concentration

  2. An economic CVD technique for pure SnO2 thin films deposition ...

    Indian Academy of Sciences (India)

    An economic CVD technique for pure SnO2 thin films deposition: Temperature effects ..... C are depicted in figure 7. It is observed that the cut-off wave- ... cating that the energy gap of the SnO2 films varies among. 3·54, 3·35 and 1·8 eV.

  3. Substrate effects on the characteristics of (In2O3)1-x (ZnO)x films

    International Nuclear Information System (INIS)

    Park, J. M.; Kim, J. J.; Kim, H. M.; Kim, J. H.; Ryu, S. W.; Park, S. H.; Ahn, J. S.

    2006-01-01

    The electrical and the optical properties of (In 2 O 3 ) 1-x (ZnO) x (IZO) films deposited by the rf magnetron sputtering on plastic substrates, such as polyethylene terephthalate (PET) and poly carbonate (PC), were investigated. The results are compared with those of IZO films deposited on a conventional coring glass (CG) substrate. The average transmittance of the IZO films deposited on plastic substrates is over 80 %, irrespective of the substrate, which is comparable to that of IZO films deposited on CG substrates. IZO films deposited on PC or PET substrates show larger resistivities than those deposited on CG substrates. This may be attributed to the fact that compositions, such as H 2 O or the organic solvent contained in the plastic substrates, are adsorbed into the IZO layer during sputtering. The surface resistance of the IZO films is nearly independent of the substrate and decreases with increasing deposition time. Compared to the IZO films deposited on PET substrates without hard coatings, those deposited on PET substrates with hard coatings show superior electrical stability for thermal environments.

  4. Atomistic growth phenomena of reactively sputtered RuO2 and MnO2 thin films

    International Nuclear Information System (INIS)

    Music, Denis; Bliem, Pascal; Geyer, Richard W.; Schneider, Jochen M.

    2015-01-01

    We have synthesized RuO 2 and MnO 2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO 2 nanorods and faceted, nanocrystalline MnO 2 , are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O 2 molecules are preferentially adsorbed at their respective RuO 2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO 2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO 2 . Due to this atomic scale decomposition, MnO 2 may have to be renucleated during growth, which is consistent with experiments

  5. Development of a flexible nanocomposite TiO{sub 2} film as a protective coating for bioapplications of superelastic NiTi alloys

    Energy Technology Data Exchange (ETDEWEB)

    Aun, Diego Pinheiro, E-mail: diegoaun@yahoo.com.br [Department of Metallurgical and Materials Engineering, Universidade Federal de Minas Gerais, Av. Antonio Carlos, 6627, 30270-901 Belo Horizonte, MG (Brazil); Houmard, Manuel, E-mail: mhoumard@ufmg.br [Department of Materials and Construction Engineering, Universidade Federal de Minas Gerais, Av. Antonio Carlos, 6627, 30270-901 Belo Horizonte, MG (Brazil); Mermoux, Michel, E-mail: michel.mermoux@lepmi.grenoble-inp.fr [LEPMI, Grenoble INP, rue de la Piscine—BP75 38402, Saint Martin d' Hères (France); Latu-Romain, Laurence, E-mail: laurence.latu-romain@simap.grenoble-inp.fr [SIR Team, Science et Ingénierie des Matériaux et Procédés, Grenoble INP, 1130, rue de la Piscine—BP75 38402, Saint Martin d' Hères (France); Joud, Jean-Charles, E-mail: jean-charles.joud@grenoble-inp.fr [SIR Team, Science et Ingénierie des Matériaux et Procédés, Grenoble INP, 1130, rue de la Piscine—BP75 38402, Saint Martin d' Hères (France); Berthomé, Gregory, E-mail: gregory.berthome@simap.grenoble-inp.fr [SIR Team, Science et Ingénierie des Matériaux et Procédés, Grenoble INP, 1130, rue de la Piscine—BP75 38402, Saint Martin d' Hères (France); Buono, Vicente Tadeu Lopes, E-mail: vbuono@demet.ufmg.br [Department of Metallurgical and Materials Engineering, Universidade Federal de Minas Gerais, Av. Antonio Carlos, 6627, 30270-901 Belo Horizonte, MG (Brazil)

    2016-07-01

    Highlights: • A NiTi alloy was coated with a flexible TiO{sub 2} protective layer via the sol–gel method. • Maximum flexibility was obtained with a nanocomposite crystalline/amorphous film. • The film reduces the Ni surface content, possibly improving the biocompatibility. - Abstract: An experimental procedure to coat superelastic NiTi alloys with flexible TiO{sub 2} protective nanocomposite films using sol–gel technology was developed in this work to improve the metal biocompatibility without deteriorating its superelastic mechanical properties. The coatings were characterized by scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, and glazing incidence X-ray diffraction. The elasticity of the film was tested in coated specimens submitted to three-point bending tests. A short densification by thermal treatment at 500 °C for 10 min yielded a bilayer film consisting of a 50 nm-thick crystallized TiO{sub 2} at the inner interface with another 50-nm-thick amorphous oxide film at the outer interface. This bilayer could sustain over 6.4% strain without cracking and could thus be used to coat biomedical instruments as well as other devices made with superelastic NiTi alloys.

  6. RBS and ion channeling studies of Ag-doped YBa2Cu3O7-δ targets and films

    International Nuclear Information System (INIS)

    Li Yupu; Liu, J.R.; Cui, X.T.; Chu, W.K.

    1998-01-01

    The location of Ag in Ag-doped YBa 2 Cu 3 O 7-δ (YBCO) films and other high-T c materials (such as Ag-doped BiSrCaCuO films and Ag-sheathed textured BiSrCaCuO wires) is a very important issue for improving high-T c materials. In this work, laser ablated and DC magnetron sputtered YBCO films on (100) LaAlO 3 and (100) SrTiO 3 were prepared from sintered Ag-YBCO composite targets (nominally containing 5 wt% Ag) and studied by Rutherford backscattering spectrometry (RBS) and ion channeling techniques using 2.0 MeV 4 He + and 7 Li + beams. We have found that the Ag-YBCO targets contain about 3 wt% Ag and most of the retained Ag atoms form some small size Ag precipitates with a typical size smaller than a few microns. We have demonstrated that in very good single crystalline YBCO films, the percentage of retained Ag in substitutional sites can be estimated by ion channeling technique. For example, we have found that about 1.2 wt% Ag atoms remain in the laser ablated Ag-doped films prepared from the Ag-YBCO target and about two-thirds of the retained Ag atoms occupy substitutional sites. The sputtered films contain less retained Ag atoms since the deposition temperature is higher and deposition time is longer than those for laser ablated films. (orig.)

  7. Microstructure and transport current characterization of YBa2Cu3O7-x thick films prepared by modified solid-liquid melt growth and powder melt process routes

    International Nuclear Information System (INIS)

    Langhorn, J.; McGinn, P.J.

    1999-01-01

    From the characterization of superconducting YBa 2 Cu 3 O 7-x (YBCO) thick films processed by melt texturing on yttria-stabilized zirconia substrates from YBCO precursors it is clear that the properties are highly dependent on the precursor powder. Increased YBCO grain sizes have been induced in thick films processed from by modified solid-liquid melt growth (SLMG) and powder melt (PMP) processes with respect to those processed from pre-reacted YBCO materials. The SLMG and PMP routes utilize precursors consisting of BaCuO 2 -CuO flux material mixed with Y 2 O 3 and Y 2 BaCuO 5 respectively. Cross-sectional analysis of films textured by these routes shows a decreased Y 2 BaCuO 5 size and an increased homogeneity within the matrix with respect to films processed from YBCO powder. Such microstructural improvements lead to an improvement of both the flux pinning and current-carrying characteristics of the processed YBCO films. (author)

  8. Transport measurements on superconducting YBa2Cu3O7-δ thin film lines

    International Nuclear Information System (INIS)

    Moeckly, B.H.; Lathrop, D.K.; Redinbo, G.F.; Russek, S.E.; Buhrman, R.A.

    1990-01-01

    Critical current densities, magnetic field response, and microwave response have been measured for laser ablated YBa 2 Cu 3 O 7-δ thin film lines on MgO and SrTiO 3 substrates. Films on SrTiO 3 have critical current densities > 1 x 10 6 A/cm 2 at 77 K and show uniform transport properties in lines of all sizes. Films on MgO have critical current densities which range between 10 2 and 10 6 A/cm 2 at 77 K and show considerable variation from device to device on the same chip. Narrow lines on MgO with low critical current densities show Josephson weak link structure which includes RSJ-like IV curves, microwave induced constant voltage steps, and a high sensitivity to magnetic field. The presence of the Josephson weak links if correlated with small amounts of misaligned grains in film on MgO

  9. Precipitates in YBa2Cu3O7-δ thin films annealed at low oxygen partial pressure

    International Nuclear Information System (INIS)

    Hou, S.Y.; Phillips, J.M.; Werder, D.J.; Tiefel, T.H.; Fleming, R.M.; Marshall, J.H.; Siegal, M.P.

    1993-01-01

    We have studied the precipitates in YBa 2 Cu 3 O 7-δ (YBCO) thin films grown by the BaF 2 process in p O 2 =4 Torr and 700 degree C. While stoichiometric films result in BaCuO 2 surface precipitates, we have found Y 2 Cu 2 O 5 precipitates embedded in the matrix of the same film. Off stoichiometric films with Ba/Y 2 Cu 2 O 5 in the film matrix. The estimated densities of the two precipitates favor a stoichiometric YBCO film matrix. This behavior is not explainable in terms of phase equilibria and is attributed to kinetic effects. The electrical properties of the films degrade as the Ba/Y ratio deviates from 2.00

  10. Ag2S/CdS/TiO2 Nanotube Array Films with High Photocurrent Density by Spotting Sample Method.

    Science.gov (United States)

    Sun, Hong; Zhao, Peini; Zhang, Fanjun; Liu, Yuliang; Hao, Jingcheng

    2015-12-01

    Ag2S/CdS/TiO2 hybrid nanotube array films (Ag2S/CdS/TNTs) were prepared by selectively depositing a narrow-gap semiconductor-Ag2S (0.9 eV) quantum dots (QDs)-in the local domain of the CdS/TiO2 nanotube array films by spotting sample method (SSM). The improvement of sunlight absorption ability and photocurrent density of titanium dioxide (TiO2) nanotube array films (TNTs) which were obtained by anodic oxidation method was realized because of modifying semiconductor QDs. The CdS/TNTs, Ag2S/TNTs, and Ag2S/CdS/TNTs fabricated by uniformly depositing the QDs into the TNTs via the successive ionic layer adsorption and reaction (SILAR) method were synthesized, respectively. The X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectrum (XPS) results demonstrated that the Ag2S/CdS/TNTs prepared by SSM and other films were successfully prepared. In comparison with the four films of TNTs, CdS/TNTs, Ag2S/TNTs, and Ag2S/CdS/TNTs by SILAR, the Ag2S/CdS/TNTs prepared by SSM showed much better absorption capability and the highest photocurrent density in UV-vis range (320~800 nm). The cycles of local deposition have great influence on their photoelectric properties. The photocurrent density of Ag2S/CdS/TNTs by SSM with optimum deposition cycles of 6 was about 37 times that of TNTs without modification, demonstrating their great prospective applications in solar energy utilization fields.

  11. Photoconductivity studies on amorphous and crystalline TiO{sub 2} films doped with gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Valverde-Aguilar, G.; Garcia-Macedo, J.A. [Universidad Nacional Autonoma de Mexico, Departamento de Estado Solido, Instituto de Fisica, Mexico D.F. (Mexico); Renteria-Tapia, V. [Universidad de Guadalajara, Centro Universitario de los Valles, Departamento de Ciencias Naturales y Exactas, Ameca, Jalisco (Mexico); Aguilar-Franco, M. [Universidad Nacional Autonoma de Mexico, Departamento de Fisica Quimica, Instituto de Fisica, Mexico D.F. (Mexico)

    2011-06-15

    In this work, amorphous and crystalline TiO{sub 2} films were synthesized by the sol-gel process at room temperature. The TiO{sub 2} films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100 C for 30 minutes and sintered at 520 C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO{sub 2} and TiO{sub 2}/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO{sub 2}/Au films are more photoconductive than the amorphous ones. (orig.)

  12. Photo-induced hydrophilicity of TiO2-xNx thin films on PET plates

    International Nuclear Information System (INIS)

    Chou, H.-Y.; Lee, E.-K.; You, J.-W.; Yu, S.-S.

    2007-01-01

    TiO 2-x N x thin films were deposited on PET (polyethylene terephthalate) plates by sputtering a TiN target in a N 2 /O 2 plasma and without heating. X-ray photoemission spectroscopy (XPS) was used to investigate the N 1s, Ti 2p core levels and the nitrogen composition in the TiO 2-x N x films. The results indicate that Ti-O-N bonds are formed in the thin films. Two nitrogen states, substitution and interstitial nitrogen atoms, were attributed to peaks at 396 and 399 eV, respectively. It was observed that the nitrogen atoms occupy both the substitutive and interstitial sites in respective of the nitrogen content in the thin films. UV-VIS absorption spectroscopy of PET coated thin films shows a significant shift of the absorption edge to lower energy in the visible-light region. UV and visible-light irradiation are used to activate PET coated thin films for the development of hydrophilicity. The photo-induced surface wettability conversion reaction of the thin films has been investigated by means of water contact angle measurement. PET plates coated with TiO 2-x N x thin films are found to exhibit lower water contact angle than non-coated plates when the surface is illuminated with UV and visible light. The effects of nitrogen doping on photo-generated hydrophilicity of the thin films are investigated in this work

  13. Biocompatibility and Surface Properties of TiO2 Thin Films Deposited by DC Magnetron Sputtering

    Science.gov (United States)

    López-Huerta, Francisco; Cervantes, Blanca; González, Octavio; Hernández-Torres, Julián; García-González, Leandro; Vega, Rosario; Herrera-May, Agustín L.; Soto, Enrique

    2014-01-01

    We present the study of the biocompatibility and surface properties of titanium dioxide (TiO2) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO2 thin films is analyzed using primary cultures of dorsal root ganglion (DRG) of Wistar rats, whose neurons are incubated on the TiO2 thin films and on a control substrate during 18 to 24 h. These neurons are activated by electrical stimuli and its ionic currents and action potential activity recorded. Through X-ray diffraction (XRD), the surface of TiO2 thin films showed a good quality, homogeneity and roughness. The XRD results showed the anatase to rutile phase transition in TiO2 thin films at temperatures between 500 and 1100 °C. This phase had a grain size from 15 to 38 nm, which allowed a suitable structural and crystal phase stability of the TiO2 thin films for low and high temperature. The biocompatibility experiments of these films indicated that they were appropriated for culture of living neurons which displayed normal electrical behavior. PMID:28788667

  14. Morphological study of electrophoretically deposited TiO2 film for DSSC application

    Science.gov (United States)

    Patel, Alkesh B.; Patel, K. D.; Soni, S. S.; Sonigara, K. K.

    2018-05-01

    In the immerging field of eco-friendly and low cost photovoltaic devices, dye sensitized solar cell (DSSC) [1] has been investigated as promising alternative to the conventional silicon-based solar cells. In the DSSC device, photoanode is crucial component that take charge of holding sensitizer on it and inject the electrons from the sensitizer to current collector. Nanoporous TiO2 is the most relevant candidate for the preparation of photoanode in DSSCs. Surface properties, morphology, porosity and thickness of TiO2 film as well as preparation technique determine the performance of device. In the present work we have report the study of an effect of nanoporous anatase titanium dioxide (TiO2) film thickness on DSSC performance. Photoanode TiO2 (P25) film was deposited on conducting substrate by electrophoresis technique (EPD) and film thickness was controlled during deposition by applying different current density for a constant time interval. Thickness and surface morphology of prepared films was studied by SEM and transmittance analysis. The same set of photoanode was utilized in DSSC devices using metal free organic dye sensitizer to evaluate the photovoltaic performance. Devices were characterized through Current-Voltage (I-V) characteristic, electrochemical impedance spectroscopy (EIS) and open circuit voltage decay curves. Dependency of device performance corresponding to TiO2 film thickness is investigated through the lifetime kinetics of electron charge transfer mechanism trough impedance fitting. It is concluded that appropriate thickness along with uniformity and porosity are required to align the dye molecules to respond efficiently the incident light photons.

  15. Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

    Science.gov (United States)

    Shi, Xiaolan; Wang, Yuhang; Zhao, Kehan; Liu, Na; Sun, Gaofeng; Zhang, Liuwan

    2015-11-01

    The epitaxial 200-nm-thick FeV2O4(110) films on (110)-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [ 1 1 ¯ 0 ] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [ 1 1 ¯ 0 ] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

  16. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  17. Influence of substrate temperature and silver-doping on the structural and optical properties of TiO_2 films

    International Nuclear Information System (INIS)

    Fischer, Dieter

    2016-01-01

    Evaporation of titanium together with activated oxygen is used to grow TiO_2 films and simultaneously with silver to grow Ag–TiO_2 films (5 at.% Ag) onto sapphire substrates at three different substrate temperatures: − 190, 30, and 200 °C. The obtained films were characterized by X-ray powder diffraction, Raman, X-ray photoelectron, ultraviolet–visible spectroscopy, and transmission electron microscope investigations. The properties of TiO_2 films varied with the substrate temperature. Amorphous, transparent TiO_2 films were grown at − 190 °C and opaque, polycrystalline films at 200 °C, respectively. Surprisingly, at room temperature black, amorphous TiO_2 films are obtained which transform at 350 °C into a mixture of the anatase and brookite polymorph. In the amorphous state of the TiO_2 films a predefined rutile arrangement is suggested by Raman investigations, and the contraction of the lattice constant c of anatase phases (tetragonal, space group I 4_1/amd) depending on the substrate temperature is experimentally observed. The silver-doped TiO_2 films deposited at − 190 and 30 °C contain Ag-particles with 2 nm in size inside the TiO_2 matrix, which after annealing segregate under increasing particle sizes. The silver-doping stabilizes the anatase polymorph and yields to reduced titanium species in the films especially during deposition at 30 °C. The Ag–TiO_2 films deposited at − 190 °C are transparent up to 350 °C. In the undoped as well as silver-doped TiO_2 films the rutile polymorph is directly formed at 200 °C as main phase. - Highlights: • At room temperature black, amorphous TiO_2 films are obtained. • A predefined rutile arrangement is suggested in amorphous TiO_2 films. • Annealed TiO_2 films crystallize to a mixture of the anatase and brookite polymorph. • In TiO_2 and Ag-doped TiO_2 films the rutile polymorph is directly formed at 200 °C. • Ag-doped TiO_2 films stabilize the anatase polymorph and reduced titanium

  18. Nanostructured Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction photoelectrode for efficient hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Dipika; Upadhyay, Sumant; Verma, Anuradha [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India); Satsangi, Vibha R. [Department of Physics Computer Sciences, Dayalbagh Educational Institute, Agra-282 110 India (India); Shrivastav, Rohit [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India); Dass, Sahab, E-mail: drsahabdas@gmail.com [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India)

    2015-01-01

    Nanostructured thin films of pristine Fe{sub 2}O{sub 3}, Ti-doped Fe{sub 2}O{sub 3}, Cu{sub 2}O, and Fe{sub 2}O{sub 3}/Cu{sub 2}O, and Ti-doped Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction were deposited on tin-doped indium oxide (Sn:In{sub 2}O{sub 3}) glass substrate using spray pyrolysis method. Ti doping is done to improve photoelectric conversion efficiency and electrical conductivity of hematite thin films. Further enhanced photocurrent is achieved for Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction electrodes. All samples were characterized using X-ray diffractometry, scanning electron microscopy, atomic force microscopy, and UV-Vis spectrometry. Photoelectrochemical properties were also investigated in a three-electrode cell system. UV-Vis absorption spectrum for pristine Fe{sub 2}O{sub 3}, Ti-Fe{sub 2}O{sub 3}, Cu{sub 2}O, Fe{sub 2}O{sub 3}/Cu{sub 2}O, and Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction thin films exhibited absorption in visible region. Nanostructured thin films as prepared were used as photoelectrode in the photoelectrochemical cell for water splitting reaction. Maximum photocurrent density of 2.60 mA/cm{sup 2} at 0.95 V/SCE was exhibited by 454 nm thick Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction photoelectrode. Increased photocurrent density and enhanced incident photon-to-electron conversion efficiency, offered by the heterojunction thin films may be attributed to improved conductivity and efficient separation of the photogenerated charge carriers at the Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O interface. - Highlights: • Heterojunction thin films were deposited using spray pyrolysis techniques. • Titanium doping in Fe{sub 2}O{sub 3} played a significant role in PEC response. • Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction shows the absorption in visible range. • Improved charge separation and enhanced PEC response were achieved in Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O.

  19. Effects of filtered cathodic vacuum arc deposition (FCVAD) conditions on photovoltaic TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Aramwit, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Intarasiri, S. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Bootkul, D. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Supsermpol, B.; Seanphinit, N. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Western Digital Thailand Co. Ltd., Ayutthaya 13160 (Thailand); Ruangkul, W. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-08-15

    Highlights: • Titanium dioxide films were synthesized using the FCVAD technique. • Various FCVAD conditions were tested. • The TiO{sub 2} films were characterized. • The FCVAD condition effects on the film characteristics were studied. • The O{sub 2} pressure had the most important effect on the film quality. - Abstract: Titanium dioxide (TiO{sub 2}) films for photovoltaic applications were synthesized using filtered cathodic vacuum arc deposition (FCVAD) technique. Various deposition conditions were tested for an optimal film formation. The conditions included the oxygen (O{sub 2}) pressure which was varied from a base pressure 10{sup −5} to 10{sup −4}, 10{sup −3}, 10{sup −2} and 10{sup −1} Torr, sample holder bias varied using 0 or −250 V, deposition time varied from 10, 20 to 30 min, and deposition distance varied from 1 to 3 cm. The deposited films were also annealed and compared with unannealed ones. The films under various conditions were characterized using optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy techniques. The film transparency increased and thickness decreased to a nanoscale with increasing of the O{sub 2} pressure. The transparent deposited films contained stoichiometric titanium and oxygen under the medium O{sub 2} pressure. The as-deposited films were TiO{sub 2} containing some rutile but no anatase which needed annealing to form.

  20. Infrared refractive index of thin YBa2Cu3O7 superconducting films

    International Nuclear Information System (INIS)

    Zhang, Z.M.; Choi, B.I.; Le, T.A.; Flik, M.I.; Siegal, M.P.; Phillips, J.M.

    1992-01-01

    This work investigates whether thin-film optics with a constant refractive index can be applied to high-T c superconducting thin films. The reflectance and transmittance of YBa 2 Cu 3 O 7 films on LaAlO 3 substrates are measured using a Fourier-transform infrared spectrometer at wavelengths from 1 to 100 μm at room temperature. The reflectance of these superconducting films at 10K in the wavelength region from 2.5 to 25 μm is measured using a cryogenic reflectance accessory. The film thickness varies from 10 to 200 nm. By modeling the frequency-dependent complex conductivity in the normal and superconducting states and applying electromagnetic-wave theory, the complex refractive index of YBa 2 Cu 3 O 7 films is obtained with a fitting technique. It is found that a thickness-independent refractive index can be applied even to a 25nm film, and average values of the spectral refractive index for film thicknesses between 25 and 200 nm are recommended for engineering applications

  1. Hydrothermal fabrication of Ni{sub 3}S{sub 2}/TiO{sub 2} nanotube composite films on Ni anode and application in photoassisted water electrolysis

    Energy Technology Data Exchange (ETDEWEB)

    He, Hongbo; Chen, Aiping, E-mail: apchen@ecust.edu.cn; Lv, Hui; Dong, Haijun; Chang, Ming; Li, Chunzhong

    2013-10-15

    Highlights: •Ni{sub 3}S{sub 2}/TiO{sub 2} nanotube photocatalysts were synthesized on Ni by hydrothermal method. •Structure of Ni{sub 3}S{sub 2} wrapped by TiO{sub 2} nanotubes improves remarkably stability of Ni{sub 3}S{sub 2}. •Ni{sub 3}S{sub 2}/TiO{sub 2} film on Ni has better H{sub 2} production performance than TiO{sub 2}-modified anode. -- Abstract: Nanostructured films of rhombohedral Ni{sub 3}S{sub 2} were hydrothermally synthesized on Ni and TiO{sub 2} nanotube layer, as substrates. A possible mechanism is proposed to explain the formation of rhombohedral Ni{sub 3}S{sub 2} nanostructures. The results of UV–vis spectrophotometric studies indicate that optical absorption spectrum of Ni{sub 3}S{sub 2}/TiO{sub 2} nanotube composites could be extended to the visible region. As-synthesized Ni{sub 3}S{sub 2}/TiO{sub 2} nanotube composite films on Ni substrate had better (by about 40%) hydrogen production performance under the visible light irradiation, in comparison with the Ni anode modified by TiO{sub 2} nanotubes.

  2. Mn{sup 2+} ions distribution in doped sol–gel deposited ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Stefan, Mariana, E-mail: mstefan@infim.ro [National Institute of Materials Physics, P.O. Box MG-7, 077125 Magurele (Romania); Ghica, Daniela; Nistor, Sergiu V.; Maraloiu, Adrian V. [National Institute of Materials Physics, P.O. Box MG-7, 077125 Magurele (Romania); Plugaru, Rodica [National Institute for R & D in Microtechnologies (IMT), Erou Iancu Nicolae Str. 126A, 077190 Bucharest (Romania)

    2017-02-28

    Highlights: • Several Mn{sup 2+} centers observed by EPR in sol–gel ZnO films. • Mn{sup 2+} ions localized at Zn{sup 2+} sites in ZnO grains and disordered ZnO phase. • Sixfold coordinated Mn{sup 2+} ions localized in inter-grain region. • Aggregated Mn in insular-like regions between ZnO grains in the ZnO:5%Mn film. • Aggregated Mn phase presence and distribution observed by EPR and EDX-STEM. - Abstract: The localization and distribution of the Mn{sup 2+} ions in two sol–gel deposited ZnO films doped with different manganese concentrations were investigated by electron paramagnetic resonance spectroscopy and analytical transmission electron microscopy. In the lightly doped sample the Mn{sup 2+} ions are mainly localized substitutionally at isolated tetrahedrally coordinated Zn{sup 2+} sites in both crystalline ZnO nanograins (34%) and surrounding disordered ZnO (52%). In the highly doped ZnO film, a much smaller proportion of manganese substitutes Zn{sup 2+} in the crystalline and disordered ZnO (10%). The main amount (85%) of manganese aggregates in a secondary phase as an insular-like distribution between the ZnO nanograins. The remaining Mn{sup 2+} ions (14% and 5% at low and high doping levels, respectively) are localized at isolated, six-fold coordinated sites, very likely in the disordered intergrain region. Annealing at 600 °C induced changes in the Mn{sup 2+} ions distribution, reflecting the increase of the ZnO crystallization degree, better observed in the lightly doped sample.

  3. Preparation of high laser-induced damage threshold Ta{sub 2}O{sub 5} films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Cheng, E-mail: xucheng@cumt.edu.cn [School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 (China); Yi, Peng; Fan, Heliang; Qi, Jianwei; Yang, Shuai; Qiang, Yinghuai; Liu, Jiongtian [School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 (China); Li, Dawei [Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2014-08-01

    High laser-induced damage threshold (LIDT) Ta{sub 2}O{sub 5} films were prepared by the sol–gel method using TaCl{sub 5} as a new precursor. The optical properties, surface morphologies, chemical composition, absorption and LIDT of the films were investigated. The results showed that the transparent and homogenous Ta{sub 2}O{sub 5} films had small surface roughness, low absorption and high LIDT even with large number of layers. The maximum LIDT at 1064 nm and 12 ns of the films was 24.8 J/cm{sup 2}. The ion chromatograph and Fourier transform infrared spectrum were used to reveal the functions of the addition of H{sub 2}O{sub 2} in the sol formation. It was shown that H{sub 2}O{sub 2} had two important functions, which were the decrease of Cl element content and the rapid generation of tantalum oxide. The high LIDT achieved was mainly due to the nearly free of defects in the films.

  4. The synthesis of poly(vinyl chloride) nanocomposite films containing ZrO2 nanoparticles modified with vitamin B1 with the aim of improving the mechanical, thermal and optical properties.

    Science.gov (United States)

    Mallakpour, Shadpour; Shafiee, Elaheh

    2017-01-01

    In the present investigation, solution casting method was used for the preparation of nanocomposite (NC) films. At first, the surface of ZrO 2 nanoparticles (NPs) was modified with vitamin B 1 (VB 1 ) as a bioactive coupling agent to achieve a better dispersion and compatibility of NPs within the poly(vinyl chloride) (PVC) matrix. The grafting of modifier on the surface of ZrO 2 was confirmed by Fourier transform infrared spectroscopy and thermogravimetric analysis (TGA). Finally, the resulting modified ZrO 2 (ZrO 2 -VB 1 ), was used as a nano-filler and incorporated into the PVC matrix to improve its mechanical and thermal properties. These processes were carried out under ultrasonic irradiation conditions, which is an economical and eco-friendly method. The effect of ZrO 2 -VB 1 on the properties and morphology of the PVC matrix was characterized by various techniques. Field emission scanning electron microscopy and transmission electron microscopy analyses showed a good dispersion of fillers into the PVC matrix with the average diameter of 37-40 nm. UV-Vis spectroscopy was used to study optical behavior of the obtained NC films. TGA analysis has confirmed the presence of about 7 wt% VB 1 on the surface of ZrO 2 . Also, the data indicated that the thermal and mechanical properties of the NC films were enhanced.

  5. Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

    International Nuclear Information System (INIS)

    Rao, Pratibha; Godbole, R.V.; Bhagwat, Sunita

    2016-01-01

    In this work, Pd:NiFe 2 O 4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe 2 O 4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost. - Highlights: • Ethanol gas sensors based on Pd:NiFe 2 O 4 nanoparticle thin film were fabricated. • Pd incorporation in NiFe 2 O 4 matrix inhibits grain growth. • The sensors were more selective to ethanol gas. • Sensors exhibited fast response and recovery when doped with palladium. • Pd:NiFe 2 O 4 thin film sensor displays excellent long–term stability.

  6. Study of band gap reduction of TiO{sub 2} thin films with variation in GO contents and use of TiO{sub 2}/Graphene composite in hybrid solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Saleem, Hareema, E-mail: hareemasaleem@gmail.com; Habib, Amir

    2016-09-15

    We have successfully designed a hybrid solar cell for improved performance of the P3HT based photovoltaic devices by using TiO{sub 2}/Graphene composites. There has been significant improvement in IV characteristics of organic solar cells prepared by this method. The TiO{sub 2}/Graphene composites act as electron collectors in active layer along with P3HT: PCBM in inverted organic photovoltaic devices. The energy bandgap was prominently reduced from 3.00 eV to 2.71 eV as confirmed by cyclic voltametery (CV) and UV–Vis spectroscopy. We have separately synthesized the TiO{sub 2} nanoparticles of size range (15 nm–22 nm) through condensed refluxed sol gel method in which titanium isopropoxide was taken as precursor. Modified Hummer's Method was used for the oxidation of graphite flakes into graphene oxide (GO) using KMnO{sub 4} as an oxidizing agent. TiO{sub 2}/Graphene composites were prepared by the subsequent sonication and heating processes. We have rigorously characterized the sample through various characterization tools. Scanning electron microscopy (SEM) results of TiO{sub 2}/Graphene films reveal the homogenous distribution of graphene nanosheets among the homogenously distributed titanium nanoparticles. X-ray diffraction (XRD) has shown the pure anatase phase peaks of TiO{sub 2} nanoparticles and oxidation of graphite at 11.8°. Fourier transform infrared spectroscopy (FTIR) has been used to study the vibrating modes. The chemical bonding Ti−O−C resulted to enhance the electron transport in obtained TiO{sub 2}/Graphene composite films. UV–Vis spectroscopy has expressed the oxidation peaks of graphite around 216 nm and all composite films were observed in visible region. The significant reduction in band gap and improved performance of hybrid solar cell using TiO{sub 2}/Graphene composite as electron collector in active layer, is attributed to getting better economical power conversion efficiency solar cell. - Highlights: • Reduction of

  7. Conduction and reversible memory phenomena in Au-nanoparticles-incorporated TeO{sub 2}–ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Bontempo, L., E-mail: bontempo@usp.br [Laboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, 158, Travessa 3, 05508-900 São Paulo, SP (Brazil); Laboratório de Materiais Fotônicos e Optoeletrônicos, Faculdade de Tecnologia de São Paulo, Praça Cel. Fernando Prestes, 30, 01124-060 São Paulo, SP (Brazil); Santos Filho, S.G. dos, E-mail: sgsantos@usp.br [Laboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, 158, Travessa 3, 05508-900 São Paulo, SP (Brazil); Kassab, L.R.P., E-mail: kassablm@osite.com.br [Laboratório de Materiais Fotônicos e Optoeletrônicos, Faculdade de Tecnologia de São Paulo, Praça Cel. Fernando Prestes, 30, 01124-060 São Paulo, SP (Brazil)

    2016-07-29

    A reversible memory behavior in TeO{sub 2}–ZnO thin films containing Au nanoparticles prepared using the sputtering technique has been observed. The current–voltage characteristics of the films, having Al and Si as electrodes, showed a switching behavior starting from an initial state of low conductivity to a high conductivity one. As a result, an abrupt increase of current (10{sup −7} to 10{sup −3} A) was observed for 6.5 V (100 nm thickness). Au nanoparticles provide a larger electron storage capability, and do not favor the transport through the insulator; they present a higher trapped charge concentration, which reduces the leakage current to lower levels. The influence of the Au nanoparticle diameter and volumetric concentration to reach the abrupt current transition and the value of the transition voltage was studied. These parameters were found to play an important role on reversible memory phenomena as they determine the facility/difficulty to fill and saturate the traps (Au nanoparticles) with electrons. - Highlights: • TeO{sub 2}–ZnO thin films with Au nanoparticles grown by magnetron co-sputtering for memory devices • Nucleation of gold nanoparticles by annealing process • Electrical properties of TeO{sub 2}–ZnO thin films with and without gold nanoparticles • Reversible memory phenomenum in Au-nanoparticles-incorporated TeO{sub 2}–ZnO thin films.

  8. Smooth YBa2Cu3O7-x thin films prepared by pulsed laser deposition in O2/Ar atmosphere

    DEFF Research Database (Denmark)

    Kyhle, Anders; Skov, Johannes; Hjorth, Søren

    1994-01-01

    We report on pulsed laser deposition of YBa2Cu3O7-x in a diluted O2/Ar gas resulting in thin epitaxial films which are almost outgrowth-free. Films were deposited on SrTiO3 or MgO substrates around 800-degrees-C at a total chamber pressure of 1.0 mbar, varying the argon partial pressure from 0 to 0.......6 mbar. The density of boulders and outgrowths usual for laser deposited films varies strongly with Ar pressure: the outgrowth density is reduced from 1.4 x 10(7) to 4.5 x 10(5) cm-2 with increasing Ar partial pressure, maintaining a critical temperature T(c,zero) almost-equal-to 90 K and a transport...... critical current density J(c)(77 K) greater-than-or-equal-to 10(6) A/cm2 by extended oxygenation time during cool down....

  9. Sol–gel preparation of well-adhered films and long range ordered inverse opal films of BaTiO{sub 3} and Bi{sub 2}Ti{sub 2}O{sub 7}

    Energy Technology Data Exchange (ETDEWEB)

    Al-Arjan, Wafa S. [Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); King Faisal University, PO Box 380, Al Hofuf (Saudi Arabia); Algaradah, Mohammed M.F. [Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); King Khalid College, Riyadh (Saudi Arabia); Brewer, Jack [Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Hector, Andrew L., E-mail: a.l.hector@soton.ac.uk [Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom)

    2016-02-15

    Highlights: • Highly adaptable sols are presented for processing of the electroceramic materials BaTiO{sub 3} and Bi{sub 2}Ti{sub 2}O{sub 7}. • High quality thin films are produced by dip coating with good phase control. • Infiltration of cross-linked polystyrene templates led to high quality inverse opals. - Abstract: Barium and bismuth titanate thin films and well-ordered inverse opal films are produced by dip coating from sols containing titanium alkoxides with acetic acid, acetylacetone, methoxyethanol and water. The inverse opal preparations used crosslinked polystyrene opal templates. Heat treatment in air produced tetragonal BaTiO{sub 3} or mixtures of the hexagonal and tetragonal phases, or phase pure Bi{sub 2}Ti{sub 2}O{sub 7}. Good quality films were obtained with a thickness of 5 μm from a single dipping, and the thickness could be increased by dipping multiple times. Inverse opals were well ordered and exhibited opalescence and photonic stop band effects.

  10. Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

    Science.gov (United States)

    Li, Shun; AlOtaibi, Bandar; Huang, Wei; Mi, Zetian; Serpone, Nick; Nechache, Riad; Rosei, Federico

    2015-08-26

    Ferroelectric materials have been studied increasingly for solar energy conversion technologies due to the efficient charge separation driven by the polarization induced internal electric field. However, their insufficient conversion efficiency is still a major challenge. Here, a photocathode material of epitaxial double perovskite Bi(2) FeCrO(6) multiferroic thin film is reported with a suitable conduction band position and small bandgap (1.9-2.1 eV), for visible-light-driven reduction of water to hydrogen. Photoelectrochemical measurements show that the highest photocurrent density up to -1.02 mA cm(-2) at a potential of -0.97 V versus reversible hydrogen electrode is obtained in p-type Bi(2) FeCrO(6) thin film photocathode grown on SrTiO(3) substrate under AM 1.5G simulated sunlight. In addition, a twofold enhancement of photocurrent density is obtained after negatively poling the Bi(2) FeCrO(6) thin film, as a result of modulation of the band structure by suitable control of the internal electric field gradient originating from the ferroelectric polarization in the Bi(2) FeCrO(6) films. The findings validate the use of multiferroic Bi(2) FeCrO(6) thin films as photocathode materials, and also prove that the manipulation of internal fields through polarization in ferroelectric materials is a promising strategy for the design of improved photoelectrodes and smart devices for solar energy conversion. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Preparation and characterization of photocatalytic performance of hierarchical heterogeneous nanostructured ZnO/TiO2 films made by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Le Phuc Quy; Vu Thi Hanh Thu

    2013-01-01

    With the aim to enhance photocatalytic properties and anti-Ecoli bacteria abilities of TiO 2 thin films; hierarchical heterogeneous nanostructured ZnO/TiO 2 (HN s ) films were deposited by DC magnetron sputtering. The obtained results showed that both the photocatalytic performance and anti-Ecoli bacteria ability of HN s films exhibited enhancement in comparison with standard TiO 2 films. This enhancement was explained due to the reduction of the electron - hole recombination and the red shift of absorption edge of the HNs films. (author)

  12. Surface plasmon resonance caused by gold nanoparticles formed on sprayed TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Oja Acik, I., E-mail: ilona.oja@ttu.ee [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Dolgov, L. [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Krunks, M.; Mere, A.; Mikli, V. [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Pikker, S.; Loot, A.; Sildos, I. [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2014-02-28

    Titania films covered by gold nanoparticles are prepared by combination of spray pyrolysis and spin-coating methods. Proposed combination of techniques is prospective for photovoltaic coatings with plasmonic properties. The prepared TiO{sub 2} films with Au nanoparticles demonstrate variation in size of the gold nanocrystallites from 36 to 56 nm depending on the concentration of the HAuCl{sub 4}∙ 3H{sub 2}O solution and plasmonic light extinction in the spectral range of 600–650 nm. It is shown that gold nanocrystallites enhance Raman scattering from the underlying thin TiO{sub 2} film. - Highlights: • TiO{sub 2} thin films with Au-nanoparticles were produced by chemical solution methods. • The size and shape of Au-nanoparticles are controlled by the [HAuCl{sub 4}∙ 3H{sub 2}O]. • Plasmon light extinction was tuned from 600 to 650 nm by changing [HAuCl{sub 4}∙ 3H{sub 2}O]. • Raman scattering intensity of TiO{sub 2} films is enhanced by the Au-nanoparticles.

  13. Structural anisotropy in amorphous SnO2 film probed by X-ray absorption spectroscopy

    Science.gov (United States)

    Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, R. P. H.; Bedzyk, M. J.; Mason, T. O.

    2013-07-01

    Polarization-dependent X-ray absorption measurements reveal the existence of structural anisotropy in amorphous (a-) SnO2 film. The anisotropy is readily seen for the second neighbor interaction whose magnitude differs along three measured directions. The differences can be well accounted for by 10%-20% variation in the Debye-Waller factor. Instead of a single Gaussian distribution found in crystalline SnO2, the Sn-O bond distribution is bimodal in a-SnO2 whose separation shows a weak angular dependence. The oxygen vacancies, existing in the a-SnO2 film in the order of 1021 cm-3, distribute preferentially along the film surface direction.

  14. High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

    Science.gov (United States)

    Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

    2018-03-01

    Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

  15. Synthesis and characterization of multilayered BaTiO3/NiFe2O4 thin films

    Directory of Open Access Journals (Sweden)

    Branimir Bajac

    2013-03-01

    Full Text Available Presented research was focused on the fabrication of multiferroic thin film structures, composed of ferrielectric barium titanate perovskite phase and magnetostrictive nickel ferrite spinel phase. The applicability of different, solution based, deposition techniques (film growth from solution, dip coating and spin coating for thefabrication of multilayered BaTiO3 /NiFe2O4 thin films was investigated. It was shown that only spin coating produces films of desired nanostructure, thickness and smooth and crackfree surfaces.

  16. Intense and stable surface-enhanced Raman scattering from Ag@mesoporous SiO{sub 2} film

    Energy Technology Data Exchange (ETDEWEB)

    Long, Yongjin; Wang, Xiaolong; Chen, Dong; Jiang, Tao, E-mail: jiangtao@nbu.edu.cn; Zhao, Ziqi; Zhou, Jun, E-mail: zhoujun@nbu.edu.cn

    2016-09-15

    A surface-enhanced Raman scattering (SERS) film consisting of mesoporous silica (MSiO{sub 2}) coated Ag nanoparticles (NPs) was achieved. The as-prepared hybrid NPs were uniform in size and formed large amount of aggregates in the film. “Hot spots” were supposed to appear in the MSiO{sub 2} shells with an average size as small as 15 nm. Such a novel core–shell structure therefore induced the enhancement of SERS intensity compared to the film of bare Ag NPs and polymer film of Ag-CMC. The homogeneity and stability of SERS signals from the Ag@MSiO{sub 2} film were also tested. A relative standard deviation of SERS intensity lower than 20% from Raman mapping and a stable SERS signal with excitation power of 100 mW were observed, which were both better than the other two films. Moreover, the obtained Ag@MSiO{sub 2} film was applied to detect thiram pesticides and a detection limit as low as 1×10{sup −8} M was reached, which indicates the advantages of the Ag@MSiO{sub 2} film in biosensor.

  17. High performance GdBa{sub 2}Cu{sub 3}O{sub 7-z} film preparation by non-fluorine chemical solution deposition approach

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.T.; Pu, M.H.; Wang, W.W. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y., E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China)] [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)

    2011-11-15

    Biaxially textured GdBa{sub 2}Cu{sub 3}O{sub 7}-z films with Tc above 93 K have been prepared on (0 0 l) by non-fluorine CSD approach. Nanoparticles with homogeneous distribution are introduced into the GdBCO films as effective pinning centers. A high Jc (77 K, 0 T) of 2.28 MA/cm{sup 2} with slow decreasing Jc-B behavior is observed in the films. Biaxially textured GdBa{sub 2}Cu{sub 3}O{sub 7-z} (GdBCO) films with T{sub c} above 93 K have been prepared on (0 0 l) LaAlO{sub 3} substrate by self-developed non-fluorine polymer-assisted chemical solution deposition (PA-CSD) approach. The GdBCO films show smooth and crack-free morphology. Many nanoscale particles with homogeneous distribution are observed in the GdBCO films, which have not been observed yet in the YBa{sub 2}Cu{sub 3}O{sub 7-z} (YBCO) films prepared by the same processing technique. Besides a high J{sub c} (77 K, 0 T) of 2.28 MA/cm{sup 2}, the optimized GdBCO films show a better J{sub c}-B behavior and an improved high-field J{sub c}, compared to the YBCO films.

  18. On the optical, structural, and morphological properties of ZrO2 and TiO2 dip-coated thin films supported on glass substrates

    International Nuclear Information System (INIS)

    Cueto, Luisa F.; Sanchez, Enrique; Torres-Martinez, Leticia M.; Hirata, Gustavo A.

    2005-01-01

    This article reports the optical and morphological properties of dip-coated TiO 2 and ZrO 2 thin films on soda-lime glass substrates by metal-organic decomposition (MOD) of titanium IV and zirconium IV acetylacetonates respectively. Thermogravimetric and differential thermal analysis (DTA-TG) were performed on the precursor powders, indicating pure TiO 2 anatase and tetragonal ZrO 2 phase formation. Phase crystallization processes took place in the range of 300-500 deg. C for anatase and of 410-500 deg. C for ZrO 2 . Fourier Transform Infrared Spectroscopy (FT-IR) was used to confirm precursor bidentate ligand formation with keno-enolic equilibrium character. Deposited films were heated at different temperatures, and their structural, optical and morphological properties were studied by grazing-incidence X-ray Diffraction (GIXRD) and X-Ray Photoelectron Spectroscopy (XPS), Ultraviolet Visible Spectroscopy (UV-Vis), and Atomic Force Microscopy (AFM) respectively. Film thinning and crystalline phase formation were enhanced with increasing temperature upon chelate decomposition. The optimum annealing temperature for both pure anatase TiO 2 and tetragonal ZrO 2 thin films was found to be 500 deg. C since solid volume fraction increased with temperature and film refractive index values approached those of pure anatase and tetragonal zirconia. Conditions for clean stoichiometric film formation with an average roughness value of 2 nm are discussed in terms of material binding energies indicated by XPS analyses, refractive index and solid volume fraction obtained indirectly by UV-Vis spectra, and crystalline peak identification provided by GIXRD

  19. Superhydrophobic ceramic coatings enabled by phase-separated nanostructured composite TiO2–Cu2O thin films

    International Nuclear Information System (INIS)

    Aytug, Tolga; Paranthaman, Parans M; Simpson, John T; Christen, David K; Bogorin, Daniela F; Mathis, John E

    2014-01-01

    By exploiting phase-separation in oxide materials, we present a simple and potentially low-cost approach to create exceptional superhydrophobicity in thin-film based coatings. By selecting the TiO 2 –Cu 2 O system and depositing through magnetron sputtering onto single crystal and metal templates, we demonstrate growth of nanostructured, chemically phase-segregated composite films. These coatings, after appropriate chemical surface modification, demonstrate a robust, non-wetting Cassie–Baxter state and yield an exceptional superhydrophobic performance, with water droplet contact angles reaching to ∼172° and sliding angles <1°. As an added benefit, despite the photo-active nature of TiO 2 , the chemically coated composite film surfaces display UV stability and retain superhydrophobic attributes even after exposure to UV (275 nm) radiation for an extended period of time. The present approach could benefit a variety of outdoor applications of superhydrophobic coatings, especially for those where exposure to extreme atmospheric conditions is required. (papers)

  20. Properties of thin films deposited from HMDSO/O2 induced remote plasma: Effect of oxygen fraction

    International Nuclear Information System (INIS)

    Saloum, S.; Naddaf, M.; Al-Khaled, B.

    2008-01-01

    Thin films deposited from hexamethyle disiloxane (HMDSO)/O 2 mixture excited in a radio-frequency hollow cathode discharge system have been investigated for their structural, optical and corrosive properties as a function of oxygen fraction χo 2o 2 =0, 0.38, 0.61, 0.76 and 0.90). It is found that the effect of oxygen fraction on films properties is related to O 2 dissociation degree (αd) behavior in pure oxygen plasma. αd has been investigated by actinometry optical emission spectroscopy (AOES) combined with double langmuir probe measurements, a maximum of O 2 dissociation degree of 15% has been obtained for 50 sccm flow rate of O 2o 2 =0.61 in HMDSO/O 2 plasma). Fourier transform infrared spectroscopy (FTIR) and optical measurements showed that the behavior of both identified IR group densities and deposition rate as a function of oxygen fraction is similar to that of O 2 dissociation degree. The inorganic nature of the films depends significantly on oxygen fraction, the best inorganic structure of deposited films has been obtained for 62% HMDSO content in the mixture HMDSO/O 2o 2 =0.38). The refractive index for deposited films from pure HMDSO(χo 2 =0) has been found to be higher than that of films deposited from HMDSO/O 2 mixture. In HMDSO/O 2 plasma, it has a behavior similar to that of deposition rate, and it is comparable to that of quartz. The effect of oxygen fraction on the corrosive properties of thin films deposited on steel has been investigated. It is found that the measured corrosion current density in 0.1 M KCI solution decreases with the addition of O 2 to HMDSO plasma, and it is minimum for χo 2 =0.38. (author)

  1. Processing of La/sub 1.8/Sr/sub 0.2/CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

    International Nuclear Information System (INIS)

    Madakson, P.; Cuomo, J.J.; Yee, D.S.; Roy, R.A.; Scilla, G.

    1988-01-01

    High quality La/sub 1.8/Sr/sub 0.2/CuO 4 and YBa 2 Cu 3 O 7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF 2 , Si, CaF 2 , ZrO 2 -9% Y 2 O 3 , BaF 2 , Al 2 O 3 , and SrTiO 3 . Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa 2 Cu 2 O 7 structure, in the case of SrTiO 3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction

  2. Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

    Science.gov (United States)

    Ling, Cuicui; Guo, Tianchao; Lu, Wenbo; Xiong, Ya; Zhu, Lei; Xue, Qingzhong

    2017-06-29

    The SnO 2 /Si heterojunction possesses a large band offset and it is easy to control the transportation of carriers in the SnO 2 /Si heterojunction to realize high-response broadband detection. Therefore, we investigated the potential of the SnO 2 nanoparticle thin film/SiO 2 /p-Si heterojunction for photodetectors. It is demonstrated that this heterojunction shows a stable, repeatable and broadband photoresponse from 365 nm to 980 nm. Meanwhile, the responsivity of the device approaches a high value in the range of 0.285-0.355 A W -1 with the outstanding detectivity of ∼2.66 × 10 12 cm H 1/2 W -1 and excellent sensitivity of ∼1.8 × 10 6 cm 2 W -1 , and its response and recovery times are extremely short (oxide or oxide/Si based photodetectors. In fact, the photosensitivity and detectivity of this heterojunction are an order of magnitude higher than that of 2D material based heterojunctions such as (Bi 2 Te 3 )/Si and MoS 2 /graphene (photosensitivity of 7.5 × 10 5 cm 2 W -1 and detectivity of ∼2.5 × 10 11 cm H 1/2 W -1 ). The excellent device performance is attributed to the large Fermi energy difference between the SnO 2 nanoparticle thin film and Si, SnO 2 nanostructure, oxygen vacancy defects and thin SiO 2 layer. Consequently, practical highly-responsive broadband PDs may be actualized in the future.

  3. Effective Carbon Dioxide Photoreduction over Metals (Fe-, Co-, Ni-, and Cu- Incorporated TiO2/Basalt Fiber Films

    Directory of Open Access Journals (Sweden)

    Jeong Yeon Do

    2016-01-01

    Full Text Available Mineralogical basalt fibers as a complementary adsorbent were introduced to improve the adsorption of CO2 over the surfaces of photocatalysts. TiO2 photocatalysts (M-TiO2 incorporated with 5.0 mol.% 3d-transition metals (Fe, Co, Ni, and Cu were prepared using a solvothermal method and mixed with basalt fibers for applications to CO2 photoreduction. The resulting 5.0 mol.% M-TiO2 powders were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectroscopy, photoluminescence, Brunauer, Emmett, and Teller surface area, and CO2-temperature-programmed desorption. A paste composed of two materials was coated and fixed on a Pyrex plate by a thermal treatment. The 5.0 mol.% M-TiO2/basalt fiber films increased the adsorption of CO2 significantly, indicating superior photocatalytic behavior compared to pure TiO2 and basalt fiber films, and produced 158~360 μmol gcat-1 L−1 CH4 gases after an 8 h reaction. In particular, the best performance was observed over the 5.0 mol.% Co-TiO2/basalt fiber film. These results were attributed to the effective CO2 gas adsorption and inhibition of photogenerated electron-hole pair recombination.

  4. YIG: Bi2O3 Nanocomposite Thin Films for Magnetooptic and Microwave Applications

    Directory of Open Access Journals (Sweden)

    M. Nur-E-Alam

    2015-01-01

    Full Text Available Y3Fe5O12-Bi2O3 composite thin films are deposited onto Gd3Ga5O12 (GGG substrates and their annealing crystallization regimes are optimized (in terms of both process temperatures and durations to obtain high-quality thin film layers possessing magnetic properties attractive for a range of technological applications. The amount of bismuth oxide content introduced into these nanocomposite-type films is controlled by adjusting the RF power densities applied to both Y3Fe5O12 and Bi2O3 sputtering targets during the cosputtering deposition processes. The measured material properties of oven-annealed YIG-Bi2O3 films indicate that cosputtering of YIG-Bi2O3 composites can provide the flexibility of application-specific YIG layers fabrication of interest for several existing, emerging, and also frontier technologies. Experimental results demonstrate large specific Faraday rotation (of more than 1°/µm at 532 nm, achieved simultaneously with low optical losses in the visible range and very narrow peak-to-peak ferromagnetic resonance linewidth of around ΔHpp= 6.1 Oe at 9.77 GHz.

  5. Effect of chemisorbed surface species on the photocatalytic activity of TiO2 nanoparticulate films

    International Nuclear Information System (INIS)

    Cao Yaan; Yang Wensheng; Chen Yongmei; Du Hui; Yue, Polock

    2004-01-01

    TiO 2 sols prepared in acidic and basic medium were deposited into films by a spin coating method. Photodegradation experiments showed that photocatalytic activity of the films prepared from acidic sol was much higher than that from basic sol. It is identified that there are more chemisorbed species of CO 2 on the surface of the TiO 2 films from the basic sol than on the surface of the TiO 2 films from the acidic sol. The chemisorbed species of CO 2 reduce the concentration of active species such as hydroxyl group and bridging oxygen on surface of the TiO 2 film and contribute to the formation of surface electron traps in the band gap which are detrimental to charge separation, thus lowering the photocatalytic activity

  6. Swift heavy ion irradiated SnO{sub 2} thin film sensor for efficient detection of SO{sub 2} gas

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Punit; Sharma, Savita [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2016-07-15

    Highlights: • Response of Ni{sup 7+} ion irradiated (100 MeV) SnO{sub 2film have been performed. • Effect of irradiation on the structural and optical properties of SnO{sub 2} film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni{sup 7+} ion irradiated (100 MeV) and non-irradiated SnO{sub 2} thin film sensor prepared under same conditions have been performed towards SO{sub 2} gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO{sub 2} thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO{sub 2} thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO{sub 2} thin film by Ni{sup 7+} ions.

  7. Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Yung-Chun Tu

    2015-01-01

    Full Text Available Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ ultraviolet photodetectors (UV-PDs. The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film. The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm under UV light (365 nm; intensity: 3 mW/cm2 were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG and 8.8-fold (Ssputter, respectively. The significant gain in sensitivity (SHTG/Ssputter = 630% of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.

  8. MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

    International Nuclear Information System (INIS)

    Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

    2006-01-01

    We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

  9. Molybdenum Doped SnO2 Thin Films as a Methanol Vapor Sensor

    Directory of Open Access Journals (Sweden)

    Patil Shriram B.

    2013-02-01

    Full Text Available The molybdenum doped SnO2 thin films were synthesized by conventional spray pyrolysis route and has been investigated for the methanol vapor sensing. The structural and elemental composition analysis of thin films was carried out by X- ray diffraction and Scanning Electron Microscopy (SEM and Energy Dispersive X-ray spectroscopy (EDAX.The XRD spectrum revealed that the thin films have the polycrystalline nature with a mixed phase comprising of SnO2 and MoO3. The scanning Electron Microscopy (SEM clears that the surface morphology observed to be granular, uniformly covering the entire surface area of the thin film. The methanol vapor sensing studies were performed in dry air at the different temperatures. The influence of the concentration of Molybdenum and operating temperature on the sensor performance has been investigated.

  10. Liquid phase deposition of WO3/TiO2 heterojunction films with high photoelectrocatalytic activity under visible light irradiation

    International Nuclear Information System (INIS)

    Zhang, Man; Yang, Changzhu; Pu, Wenhong; Tan, Yuanbin; Yang, Kun; Zhang, Jingdong

    2014-01-01

    Highlights: • Liquid phase deposition is developed for preparing WO 3 /TiO 2 heterojunction films. • TiO 2 film provides an excellent platform for WO 3 deposition. • WO 3 expands the absorption band edge of TiO 2 film to visible light region. • WO 3 /TiO 2 heterojunction film shows high photoelectrocatalytic activity. - ABSTRACT: The heterojunction films of WO 3 /TiO 2 were prepared by liquid phase deposition (LPD) method via two-step processes. The scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopic analysis indicated that flower-like WO 3 film was successfully deposited on TiO 2 film with the LPD processes. The TiO 2 film provided an excellent platform for WO 3 deposition while WO 3 obviously expanded the absorption of TiO 2 film to visible light. As the result, the heterojunction film of WO 3 /TiO 2 exhibited higher photocurrent response to visible light illumination than pure TiO 2 or WO 3 film. The photoelectrocatalytic (PEC) activity of WO 3 /TiO 2 film was evaluated by degrading Rhodamin B (RhB) and 4-chlorophenol (4-CP) under visible light irradiation. The results showed that the LPD WO 3 /TiO 2 film possessed high PEC activity for efficient removal of various refractory organic pollutants

  11. Structural transformation of sputtered o-LiMnO{sub 2} thin-film cathodes induced by electrochemical cycling

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, J., E-mail: Julian.Fischer@kit.edu [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials – Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Chang, K. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 52074 Aachen (Germany); Ye, J.; Ulrich, S.; Ziebert, C. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials – Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Music, D.; Hallstedt, B. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 52074 Aachen (Germany); Seifert, H.J. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials – Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2013-12-31

    Orthorhombic LiMnO{sub 2} (o-LiMnO{sub 2}) thin films were produced by non-reactive r.f. magnetron sputtering in combination with thermal post-annealing. Oxide phase formation was investigated by X-ray diffraction and Raman spectroscopy. In order to assign the X-ray signals and estimate the grain size, a simulation of the diffraction pattern was performed and compared with experimental data. The density of the films was determined to be 3.39 g/cm{sup 3} using X-ray reflectivity. Electrochemical characterization was carried out by galvanostatic cycling and cyclic voltammetry of Li/o-LiMnO{sub 2} half cells. There are distinct redox reactions at approx. 3 V and 4 V, whereas the latter splits into multiple peaks. Using ab initio calculations and thermodynamic models, Gibbs energies of o-LiMnO{sub 2} and c-LiMn{sub 2}O{sub 4} were determined. The relation between these energies explains the irreversible phase transformation that has been observed during the cycling of the Li/o-LiMnO{sub 2} half cell. - Highlights: • Quantitative, thermodynamic modeling of the o-LiMnO{sub 2}/c-LiMn{sub 2}O{sub 4} phase transformation • First CV-investigations on magnetron sputtered nanocrystalline o-LiMnO{sub 2} thin films • Synthesis of o-LiMnO{sub 2} planar model systems for protective coating and SEI development.

  12. Electrodeposition synthesis and electrochemical properties of nanostructured γ-MnO 2 films

    Science.gov (United States)

    Chou, Shulei; Cheng, Fangyi; Chen, Jun

    The thin films of carambola-like γ-MnO 2 nanoflakes with about 20 nm in thickness and at least 200 nm in width were prepared on nickel sheets by combination of potentiostatic and cyclic voltammetric electrodeposition techniques. The as-prepared MnO 2 nanomaterials, which were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), were used as the active material of the positive electrode for primary alkaline Zn/MnO 2 batteries and electrochemical supercapacitors. Electrochemical measurements showed that the MnO 2 nanoflake films displayed high potential plateau (around 1.0 V versus Zn) in primary Zn/MnO 2 batteries at the discharge current density of 500 mA g -1 and high specific capacitance of 240 F g -1 at the current density of 1 mA cm -2. This indicated the potential application of carambola-like γ-MnO 2 nanoflakes in high-power batteries and electrochemical supercapacitors. The growth process for the one- and three-dimensional nanostructured MnO 2 was discussed on the basis of potentiostatic and cyclic voltammetric techniques. The present synthesis method can be extended to the preparation of other nanostructured metal-oxide films.

  13. Optical and structural properties of Cu-doped β-Ga2O3 films

    International Nuclear Information System (INIS)

    Zhang Yijun; Yan Jinliang; Li Qingshan; Qu Chong; Zhang Liying; Xie Wanfeng

    2011-01-01

    Graphical abstract: Highlights: → We prepare polycrystalline Cu-doped β-Ga2O3 films. → Cu dopants cause poor crystal quality and shrinkage of the optical band gap. → Cu-doping enhances the UV and blue emission. → A new blue emission peak centre at 475 nm appears by Cu-doping. → Cu dopants decrease the optical transmittance. - Abstract: The intrinsic and Cu-doped β-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in an argon and oxygen mixture ambient. The effects of the Cu doping and the post thermal annealing on the optical and structural properties of the β-Ga 2 O 3 films were studied. The surface morphology, microstructure, optical transmittance, optical absorption, optical energy gap and photoluminescence of the β-Ga 2 O 3 films were significantly changed after Cu-doping. After post thermal annealing, Polycrystalline β-Ga 2 O 3 films were obtained, the transmittance decreased. After Cu-doping, the grain size decreased, the crystal quality deteriorated and the optical band gap shrunk. The UV, blue and green emission bands were observed and discussed. The UV and blue emission were enhanced and a new blue emission peak centred at 475 nm appeared by Cu-doping.

  14. Layer-by-layer assembled TiO{sub 2} films with high ultraviolet light-shielding property

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaozhou [College of Science, Northwest A and F University, Yangling, Shaanxi 712100 (China); Wang, Lin, E-mail: wanglin0317@nwsuaf.edu.cn [College of Science, Northwest A and F University, Yangling, Shaanxi 712100 (China); Pei, Yuxin [College of Science, Northwest A and F University, Yangling, Shaanxi 712100 (China); Jiang, Jinqiang [State Key Lab of Applied Surface and Colloid Chemistry, College of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi' an 710062 (China)

    2014-11-28

    Ultraviolet (UV) B is hazardous to human, plants and animals. With the rapid growth of ozone holes over the earth, the exploration of optical materials that can cut off harmful UV radiation is important. In this work, fusiform TiO{sub 2} nanoparticles were synthesized by a hydrothermal synthesis method. The thin films assembled with TiO{sub 2} nanoparticles and oppositely charged polyelectrolytes were fabricated via a layer-by-layer assembly method. The fabrication of poly(ethylene imine) (PEI)/TiO{sub 2} multilayer films was verified by ultraviolet–visible spectra measurements, scanning electron microscopy and atomic force microscopy. The as-prepared PEI/TiO{sub 2} multilayer films can effectively absorb harmful UVB light and filter off visible light. Most importantly, the PEI/TiO{sub 2} films can be deposited directly on various kinds of hydrophilic substrates such as quartz, glass, silicon and hydrophobic substrates such as polystyrene, polypropylene, polyethylene and polymethyl methacrylate when the hydrophilic substrates were modified to obtain a hydrophilic surface. - Highlights: • PEI/TiO{sub 2} films were fabricated via a layer-by-layer self-assembly method. • The films could effectively absorb harmful UVB light and filter off visible light. • The films could deposit directly on either hydrophilic or hydrophobic substrates.

  15. Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

    Science.gov (United States)

    Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

    2018-05-01

    Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

  16. Study on Gas Sensing Performance of TiO2 Screen Printed Thick Films

    Directory of Open Access Journals (Sweden)

    C. G. DIGHAVKAR

    2009-02-01

    Full Text Available Titanium dioxide (TiO2 thick films were prepared on alumina substrate by using screen printing technique. After preparation, the films were fired at temperature range 600 -1000 ºC for two hour. Morphological, compositional and structural properties of the film samples were performed by means of several techniques, including scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDS, X-ray diffraction techniques. We explore the various gases to study the sensing performance of the TiO2 thick films. The maximum response was reported to film fired at 800 0C for LPG gas at 350 0C operating temperature.

  17. The Effect of Normal Force on Tribocorrosion Behaviour of Ti-10Zr Alloy and Porous TiO2-ZrO2 Thin Film Electrochemical Formed

    Science.gov (United States)

    Dănăilă, E.; Benea, L.

    2017-06-01

    The tribocorrosion behaviour of Ti-10Zr alloy and porous TiO2-ZrO2 thin film electrochemical formed on Ti-10Zr alloy was evaluated in Fusayama-Mayer artificial saliva solution. Tribocorrosion experiments were performed using a unidirectional pin-on-disc experimental set-up which was mechanically and electrochemically instrumented, under various solicitation conditions. The effect of applied normal force on tribocorrosion performance of the tested materials was determined. Open circuit potential (OCP) measurements performed before, during and after sliding tests were applied in order to determine the tribocorrosion degradation. The applied normal force was found to greatly affect the potential during tribocorrosion experiments, an increase in the normal force inducing a decrease in potential accelerating the depassivation of the materials studied. The results show a decrease in friction coefficient with gradually increasing the normal load. It was proved that the porous TiO2-ZrO2 thin film electrochemical formed on Ti-10Zr alloy lead to an improvement of tribocorrosion resistance compared to non-anodized Ti-10Zr alloy intended for biomedical applications.

  18. Polymer Photovoltaic Cell Using TiO2/G-PEDOT Nanocomplex Film as Electrode

    Directory of Open Access Journals (Sweden)

    F. X. Xie

    2008-01-01

    Full Text Available Using TiO2/G-PEDOT (PEDOT/PSS doped with glycerol nanocomplex film as a substitute for metal electrode in organic photovoltaic cell is described. Indium tin oxide (ITO worked as cathode and TiO2/G-PEDOT nanocomplex works as anode. The thickness of TiO2 layer in nanocomplex greatly affects the act of this nonmetallic electrode of the device. To enhance its performance, this inverted organic photovoltaic cell uses another TiO2 layer as electron selective layer contacted to ITO coated glass substrates. All films made by solution processing techniques are coated on the transparent substrate (glass with a conducting film ITO. The efficiency of this solar cell is compared with the conventional device using Al as electrode.

  19. Superconductivity in transparent zinc-doped In2O3 films having low carrier density

    Directory of Open Access Journals (Sweden)

    Kazumasa Makise, Nobuhito Kokubo, Satoshi Takada, Takashi Yamaguti, Syunsuke Ogura, Kazumasa Yamada, Bunjyu Shinozaki, Koki Yano, Kazuyoshi Inoue and Hiroaki Nakamura

    2008-01-01

    Full Text Available Thin polycrystalline zinc-doped indium oxide (In2O3–ZnO films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0≤x ≤0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5≤T ≤300 K, H≤6 Tfor 350 nm films annealed in air. Films with 0≤x≤0.03 show the superconducting resistive transition. The transition temperature Tc is below 3.3 K and the carrier density n is about 1025–1026 m−3. The annealed In2O3–ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field Hc2 (T for the film with x = 0.01. From the slope of dHc2 /dT, we obtain the coherence length ξ (0 ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

  20. Flame-Sprayed Y2O3 Films with Metal-EDTA Complex Using Various Cooling Agents

    Science.gov (United States)

    Komatsu, Keiji; Toyama, Ayumu; Sekiya, Tetsuo; Shirai, Tomoyuki; Nakamura, Atsushi; Toda, Ikumi; Ohshio, Shigeo; Muramatsu, Hiroyuki; Saitoh, Hidetoshi

    2017-01-01

    In this study, yttrium oxide (Y2O3) films were synthesized from a metal-ethylenediaminetetraacetic (metal-EDTA) complex by employing a H2-O2 combustion flame. A rotation apparatus and various cooling agents (compressed air, liquid nitrogen, and atomized purified water) were used during the synthesis to control the thermal history during film deposition. An EDTA·Y·H complex was prepared and used as the staring material for the synthesis of Y2O3 films with a flame-spraying apparatus. Although thermally extreme environments were employed during the synthesis, all of the obtained Y2O3 films showed only a few cracks and minor peeling in their microstructures. For instance, the Y2O3 film synthesized using the rotation apparatus with water atomization units exhibited a porosity of 22.8%. The maximum film's temperature after deposition was 453 °C owing to the high heat of evaporation of water. Cooling effects of substrate by various cooling units for solidification was dominated to heat of vaporization, not to unit's temperatures.