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Sample records for films growth mechanisms

  1. Growth Mechanism of Cluster-Assembled Surfaces: From Submonolayer to Thin-Film Regime

    Science.gov (United States)

    Borghi, Francesca; Podestà, Alessandro; Piazzoni, Claudio; Milani, Paolo

    2018-04-01

    Nanostructured films obtained by assembling preformed atomic clusters are of strategic importance for a wide variety of applications. The deposition of clusters produced in the gas phase onto a substrate offers the possibility to control and engineer the structural and functional properties of the cluster-assembled films. To date, the microscopic mechanisms underlying the growth and structuring of cluster-assembled films are poorly understood, and, in particular, the transition from the submonolayer to the thin-film regime is experimentally unexplored. Here we report the systematic characterization by atomic force microscopy of the evolution of the structural properties of cluster-assembled films deposited by supersonic cluster beam deposition. As a paradigm of nanostructured systems, we focus our attention on cluster-assembled zirconia films, investigating the influence of the building block dimensions on the growth mechanisms and roughening of the thin films, following the growth process from the early stages of the submonolayer to the thin-film regime. Our results demonstrate that the growth dynamics in the submonolayer regime determines different morphological properties of the cluster-assembled thin film. The evolution of the roughness with the number of deposited clusters reproduces the growth exponent of the ballistic deposition in the 2 +1 model from the submonolayer to the thin-film regime.

  2. Texture control and growth mechanism of WSe{sub 2} film prepared by rapid selenization of W film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou 341300 (China); Gao, Di; Li, Kun; Pang, Mengde; Xie, Senlin [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Liu, Rutie, E-mail: llrrtt@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Zou, Jianpeng [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

    2017-02-01

    Highlights: • We present a highly efficient method for preparing WSe{sub 2} film by rapid selenization. • The W film phase composition has little effect on WSe{sub 2} film orientation. • W film density is a critical factor that influences the WSe{sub 2} orientation. • A growth model was proposed for two kinds of WSe{sub 2} film textures. - Abstract: The tungsten diselenide (WSe{sub 2}) films with different orientation present unique properties suitable for specific applications, such as WSe{sub 2} with a C-axis⊥substrate for optoelectronics and WSe{sub 2} with a C-axis // substrate for electrocatalysts. Orientation control of WSe{sub 2} is essential for realizing the practical applications. In this letter, a WSe{sub 2} film has been prepared via rapid selenization of a magnetron-sputtered tungsten (W) film. The influence of the magnetron-sputtered W film on WSe{sub 2} film growth was studied systematically. Scanning electron microscopy, X-ray diffractometry and high-resolution transmission electron microscopy were used to evaluate the morphology, microstructure and phase composition of the W and WSe{sub 2} films. The substrate temperature has a significant effect on the W film phase composition, but little effect on the WSe{sub 2} film orientation. The WSe{sub 2} orientation can be controlled by changing the W film microstructure. A dense W film that is deposited at low pressure is conducive to the formation of WSe{sub 2} with a C-axis⊥substrate, whereas a porous W film deposited at high pressure favors the formation of WSe{sub 2} with a C-axis // substrate. A growth model for the WSe{sub 2} film with different texture has been proposed based on the experimental results. The direction of selenium (Se) vapor diffusion differs at the top and side surfaces. This is a key factor for the preparation of anisotropic WSe{sub 2} films. Highly oriented WSe{sub 2} films with a C-axis⊥substrate grow from the dense W film deposited at low pressure because Se vapor

  3. On the mechanism of self-deceleration of the thin oxide film growth

    CERN Document Server

    Mukhambetov, D G

    2002-01-01

    The objective of this work was to investigate the kinetics of the two-phase oxide film growth on the alpha-Fe surface at temperatures of 650-750 K. We experimentally determined that the film thickness (h)-time oxidation (tau) relationship in the range denoted above is a logarithmic function, whereas Cabrera and Mott's theory gives a square law of film growth. In our work, analytical treatment of experimental data was made based on this theory, but we propose that self-deceleration of the film growth is caused not by attenuation of the electric intensity in the film because of an increase of h but by the shielding influence of the space charge of diffusing ions and electrons in that oxide film. With that purpose in view, the Debye shielding distance for plasma substance state in the oxide film was taken into consideration. The logarithmic law of oxide film growth was derived. Estimated calculations of this law's parameters were made that quantitatively correspond with literature data. The results obtained were...

  4. Mechanism of formation and growth of sunflower-shaped imperfections in anodic oxide films on niobium

    Energy Technology Data Exchange (ETDEWEB)

    Nagahara, K. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan); Sakairi, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan); Takahashi, H. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: Takahasi@elechem1-mc.eng.hokudai.ac.jp; Matsumoto, K. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan); Takayama, K. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan); Oda, Y. [Cabot Supermetals K.K., Higashinagahara Works, 111 Nagayachi, Kawahigashi-machi, Kawanuma-gun, Fukushima-ken 969-3431 (Japan)

    2007-01-01

    Anodizing of niobium has been investigated to develop niobium solid electrolytic capacitors. Chemically polished niobium specimens were anodized in a diluted phosphoric acid solution, initially galvanostatically at i {sub a} = 4 A m{sup -2} up to E {sub a} = 100 V, and then potentiostatically at E {sub a} = 100 V for t {sub pa} = 43.2 ks. During the galvanostatic anodizing, the anode potential increased almost linearly with time, while, during potentiostatic anodizing, the anodic current decreased up to t {sub pa} = 3.6 ks, and then increased slowly before decreasing again after t {sub pa} = 30.0 ks. Images of FE-SEM and in situ AFM showed that nuclei of imperfections were formed at the ridge of cell structures before t {sub pa} = 3.6 ks. After formation, the imperfection nuclei grew, showing cracking and rolling-up of the anodic oxide film, and crystalline oxide was formed at the center of imperfections after t {sub pa} = 3.6 ks. The growth of imperfections caused increases in the anodic current between t {sub pa} = 3.6 and 30.0 ks. Long-term anodizing caused a coalescence of the imperfections, leading to decreases in the anodic current after t {sub pa} = 30.0 ks. As the imperfections grew, the dielectric dispersion of the anodic oxide films became serious, showing a bias voltage dependence of the parallel equivalent capacitance, C {sub p}, and a dielectric dissipation factor, tan {delta}. The mechanism of formation and growth of the imperfections, and the correlation between the structure and dielectric properties of anodic oxide films is discussed.

  5. Ellipsometry of anodic film growth

    Energy Technology Data Exchange (ETDEWEB)

    Smith, C.G.

    1978-08-01

    An automated computer interpretation of ellisometer measurements of anodic film growth was developed. Continuous mass and charge balances were used to utilize more fully the time dependence of the ellipsometer data and the current and potential measurements. A multiple-film model was used to characterize the growth of films which proceeds via a dissolution--precipitation mechanism; the model also applies to film growth by adsorption and nucleation mechanisms. The characteristic parameters for film growth describe homogeneous and heterogeneous crystallization rates, film porosities and degree of hydration, and the supersaturation of ionic species in the electrolyte. Additional descriptions which may be chosen are patchwise film formation, nonstoichiometry of the anodic film, and statistical variations in the size and orientation of secondary crystals. Theories were developed to describe the optical effects of these processes. An automatic, self-compensating ellipsometer was used to study the growth in alkaline solution of anodic films on silver, cadmium, and zinc. Mass-transport conditions included stagnant electrolyte and forced convection in a flow channel. Multiple films were needed to characterize the optical properties of these films. Anodic films grew from an electrolyte supersatuated in the solution-phase dissolution product. The degree of supersaturation depended on transport conditions and had a major effect on the structure of the film. Anodic reaction rates were limited by the transport of charge carriers through a primary surface layer. The primary layers on silver, zinc, and cadmium all appeared to be nonstoichiometric, containing excess metal. Diffusion coefficients, transference numbers, and the free energy of adsorption of zinc oxide were derived from ellipsometer measurements. 97 figures, 13 tables, 198 references.

  6. Mechanical integrity of thin films

    International Nuclear Information System (INIS)

    Hoffman, R.W.

    1979-01-01

    Mechanical considerations starting with the initial film deposition including questions of adhesion and grading the interface are reviewed. Growth stresses, limiting thickness, stress relief, control aging, and creep are described

  7. Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation

    International Nuclear Information System (INIS)

    Pant, P.; Budai, J.D.; Narayan, J.

    2010-01-01

    Using high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction, we investigated the strain relaxation mechanisms for nonpolar (1 1 -2 0) a-plane ZnO epitaxy on (1 -1 0 2) r-plane sapphire, where the in-plane misfit ranges from -1.5% for the [0 0 0 1]ZnO-parallel [1 -1 0 -1]sapphire to -18.3% for the [-1 1 0 0]ZnO-parallel [-1 -1 2 0]sapphire direction. For the large misfit [-1 1 0 0]ZnO direction the misfit strains are fully relaxed at the growth temperature, and only thermal misfit and defect strains, which cannot be relaxed fully by slip dislocations, remain on cooling. For the small misfit direction, lattice misfit is not fully relaxed at the growth temperature. As a result, additive unrelaxed lattice and thermal misfit and defect strains contribute to the measured strain. Our X-ray diffraction measurements of lattice parameters show that the anisotropic in-plane biaxial strain leads to a distortion of the hexagonal symmetry of the ZnO basal plane. Based on the anisotropic strain relaxation observed along the orthogonal in-plane [-1 1 0 0] and [0 0 0 1]ZnO stress directions and our HRTEM investigations of the interface, we show that the plastic relaxation occurring in the small misfit direction [0 0 0 1]ZnO by dislocation nucleation is incomplete. These results are consistent with the domain-matching paradigm of a complete strain relaxation for large misfits and a difficulty in relaxing the film strain for small misfits.

  8. Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

    International Nuclear Information System (INIS)

    Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

    2011-01-01

    Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

  9. Two step growth mechanism of Cu2ZnSnS4 thin films

    Science.gov (United States)

    Thota, Narayana; Venkata Subbaiah, Y. P.; Prathap, P.; Reddy, Y. B. K.; Hema Chandra, G.

    2014-09-01

    Cu2ZnSnS4 (CZTS) semiconductor is rapidly emerging as the best absorber layer for next generation solar photovoltaics. Its cost effectiveness, environment-friendly nature, wide presence of chemical constituents in nature and high absorption coefficient with suitable energy band gap for effective utilization of solar spectrum makes it a viable alternative. The present work summarizes the preparation of CZTS films through a two-step process consisting of co-sputtered metallic precursors on glass substrates kept at 230 °C followed by sulfurization for 2 h in the ambience of elemental sulfur vapor at different temperatures ranging from 300 to 550 °C. The X-ray diffraction (XRD) and Raman analysis make it explicit that the sulfurization temperature has significant impact on reaction mechanism resulting in various bi-metallic, mono and binary metal sulfides. The diffraction pattern noticed at 500 °C corresponding to (112), (220) and (312) planes confirms the single phase CZTS as evidenced by weak and strong Raman modes at 285, 337 and 352 cm-1. The transmittance and reflectance measurements of optimized CZTS films revealed that the films have an energy band gap of ~1.56 eV. The optimized films were characterized by scanning electron microscopy (SEM) attached with EDS to know the morphological features and elemental quantification. The single phase CZTS films have exhibited p-type conductivity with sheet resistance ~6.8×103 Ω/sq., carrier concentration ~9.1×1017 cm-3 and hole mobility ~16.6 cm2V-1 s-1.

  10. Mechanism of growth, composition and structure of oxide films formed on ferrous alloys in molten salt electrolytes - a review

    International Nuclear Information System (INIS)

    Tzvetkoff, Tz.; Kolchakov, J.

    2004-01-01

    The growth kinetics, chemical composition and structure of scales formed during corrosion of Fe and its alloys in molten salts are reviewed. Special attention is paid to the effect of the composition of the molten salt mixture and the gas atmosphere on the stability and protective ability of corrosion layers. First, the thermodynamical background of the corrosion and oxidation of Fe-base engineering materials in molten salt media is briefly commented. A concise review of the growth kinetics of passivating oxide films is also presented. These two introductory chapters serve as a guide for the extensive survey of the growth mechanism, nature and properties of oxide and related scales on ferrous alloys in a range of molten electrolytes - chlorides, nitrates, sulphates, carbonates, hydroxides and mixtures thereof in gas atmospheres containing O 2 , CO 2 , SO 2 , SO 3 and HCl

  11. A-axis oriented superconductive YBCO thin films. Growth mechanism on MgO substrate. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Hamet, J F; Mercey, B; Hervieu, M; Poullain, G; Raveau, B [Centre de Materiaux Supraconducteurs, CRISMAT-ISMRa, 14 - Caen (France)

    1992-08-01

    The growth mechanism of a-axis oriented YBCO thin films has been studied by TEM. At 650degC, a disordered cubic perovskite is first formed with a[sub p]parallela[sub MgO], then a strained tetragonal a-axis oriented perovskite is observed, with c=3a[sub p], slightly misoriented with respect to MgO and showing a marquetry-like contrast. At 750degC, a [1anti 10] axis oriented perovskite is formed whose lattice exhibits a rotation with respect to MgO lattice, but also a tilting of the [CuO[sub 2

  12. Disilane chemisorption on Si(x)Ge(1-x)(100)-(2 x 1): molecular mechanisms and implications for film growth rates.

    Science.gov (United States)

    Ng, Rachel Qiao-Ming; Tok, E S; Kang, H Chuan

    2009-07-28

    At low temperatures, hydrogen desorption is known to be the rate-limiting process in silicon germanium film growth via chemical vapor deposition. Since surface germanium lowers the hydrogen desorption barrier, Si(x)Ge((1-x)) film growth rate increases with the surface germanium fraction. At high temperatures, however, the molecular mechanisms determining the epitaxial growth rate are not well established despite much experimental work. We investigate these mechanisms in the context of disilane adsorption because disilane is an important precursor used in film growth. In particular, we want to understand the molecular steps that lead, in the high temperature regime, to a decrease in growth rate as the surface germanium increases. In addition, there is a need to consider the issue of whether disilane adsorbs via silicon-silicon bond dissociation or via silicon-hydrogen bond dissociation. It is usually assumed that disilane adsorption occurs via silicon-silicon bond dissociation, but in recent work we provided theoretical evidence that silicon-hydrogen bond dissociation is more important. In order to address these issues, we calculate the chemisorption barriers for disilane on silicon germanium using first-principles density functional theory methods. We use the calculated barriers to estimate film growth rates that are then critically compared to the experimental data. This enables us to establish a connection between the dependence of the film growth rate on the surface germanium content and the kinetics of the initial adsorption step. We show that the generally accepted mechanism where disilane chemisorbs via silicon-silicon bond dissociation is not consistent with the data for film growth kinetics. Silicon-hydrogen bond dissociation paths have to be included in order to give good agreement with the experimental data for high temperature film growth rate.

  13. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  14. Electrodeposition of CdTe thin films onto n-Si(1 0 0): nucleation and growth mechanisms

    International Nuclear Information System (INIS)

    Gomez, H.; Henriquez, R.; Schrebler, R.; Cordova, R.; Ramirez, D.; Riveros, G.; Dalchiele, E.A.

    2005-01-01

    The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200 V to values comprised between -0.515 and -0.600 V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D) ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D) diff , both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions

  15. Growth mechanisms and thickness effect on the properties of Al-doped ZnO thin films grown on polymeric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Koidis, Christos; Logothetidis, Stergios; Kassavetis, Spiridon; Laskarakis, Argiris [Lab for Thin Films-Nanosystems and Nanometrology (LTFN), Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Hastas, Nikolaos A.; Valassiades, Odisseas [Solid State Section, Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2010-07-15

    The properties of Al-doped ZnO (AZO) thin films deposited by pulsed DC magnetron sputtering under various target power on polyethylene terephthalate (PET) substrates have been investigated. In situ and real-time spectroscopic ellipsometry (1.5-6.5 eV) has been employed to study the optical properties of the AZO films as well as the growth mechanisms taking place. With X-ray diffraction technique under grazing-incidence geometry, the structural characteristics profiles of the AZO films have been depicted. Nanoindentation measurements revealed information about the mechanical properties of the films and have been correlated to the conductivity measurements towards growth insights understanding. As results have shown, the increase of target power led to the increase of the carrier density as well as the hardness of the AZO films possibly both ascribed to dislocations induced. The stress during the deposition of AZO film under high target power favoured the island growth which is possibly both connected to the formation of defects as electron traps and dislocations as electron sources. Finally, the increase of AZO film thickness led to the increase of the resistivity possibly due to the enrichment of grain boundaries with defects as electron traps. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. Growth Kinetics and Oxidation Mechanism of ALD TiN Thin Films Monitored by In Situ Spectroscopic Ellipsometry

    NARCIS (Netherlands)

    Van Hao, B.; Groenland, A.W.; Aarnink, Antonius A.I.; Wolters, Robertus A.M.; Schmitz, Jurriaan; Kovalgin, Alexeij Y.

    2011-01-01

    Spectroscopic ellipsometry (SE) was employed to investigate the growth of atomic layer deposited (ALD) TiN thin films from titanium chloride (TiCl4) and ammonia (NH3) and the followed oxidation in dry oxygen. Two regimes were found in the growth including a transient stage prior to a linear regime.

  17. Comprehensive study of growth mechanism and properties of low Zn content Cd{sub 1-x}Zn{sub x}S thin films by chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Carlos Anibal [Multidisciplinary Research Institute in Science and Technology, Ineergias, University of La Serena (Chile); Sandoval-Paz, Myrna Guadalupe; Saavedra, Renato; De la Carrera, Francisco [Department of Physics, Faculty of Physical and Mathematical Sciences, University of Concepcion (Chile); Trejo-Cruz, Cuauhthemoc [Department of Physics, Faculty of Sciences, University of Biobio, Concepcion (Chile); Aragon, Luis E.; Sirena, Martin [Centro Atomico Bariloche & Instituto Balseiro, CNEA & Univ. Nac. de Cuyo, Bariloche, Rio Negro (Argentina); Delplancke, Marie-Paule [4MAT, Universite Libre de Bruxelles, Brussels (Belgium); Carrasco, Claudia [Department of Materials Engineering, Faculty of Engineering, University of Concepcion (Chile)

    2016-11-15

    Cd{sub 1-x}Zn{sub x}S thin films have been studied extensively as window layers for solar cell applications. However, a mismatch between the Cd{sub 1-x}Zn{sub x}S and copper-indium-gallium-selenide absorber layers increases with Zn film concentration, which reduces the device efficiency. In this work, Cd{sub 1-x}Zn{sub x}S thin films with low Zn concentrations were analyzed. The effect of the addition of different molar Zn concentrations to the reaction mixture on the growth mechanism of Cd{sub 1-x}Zn{sub x}S thin films and the influence of these mechanisms on structural, optical and morphological properties of the films has been studied. Cd{sub 1-x}Zn{sub x}S thin films were synthesized by chemical bath deposition using an ammonia-free alkaline solution. Microstructural analysis by X-ray diffraction showed that all deposited films grew with hexagonal structure and crystallite sizes decreased as the Zn concentration in the film increased. Optical measurements indicated a high optical transmission between 75% and 90% for wavelengths above the absorption edge. Band gap value increased from 2.48 eV to 2.62 eV, and the refractive index values for Cd{sub 1-x}Zn{sub x}S thin films decreased as the Zn increased. These changes in films and properties are related to a modification in growth mechanism of the Cd{sub 1-x}Zn{sub x}S thin films, with the influence of Zn(OH){sub 2} formation being more important as Zn in solution increases. (author)

  18. Comprehensive study of growth mechanism and properties of low Zn content Cd_1_-_xZn_xS thin films by chemical bath

    International Nuclear Information System (INIS)

    Rodriguez, Carlos Anibal; Sandoval-Paz, Myrna Guadalupe; Saavedra, Renato; De la Carrera, Francisco; Trejo-Cruz, Cuauhthemoc; Aragon, Luis E.; Sirena, Martin; Delplancke, Marie-Paule; Carrasco, Claudia

    2016-01-01

    Cd_1_-_xZn_xS thin films have been studied extensively as window layers for solar cell applications. However, a mismatch between the Cd_1_-_xZn_xS and copper-indium-gallium-selenide absorber layers increases with Zn film concentration, which reduces the device efficiency. In this work, Cd_1_-_xZn_xS thin films with low Zn concentrations were analyzed. The effect of the addition of different molar Zn concentrations to the reaction mixture on the growth mechanism of Cd_1_-_xZn_xS thin films and the influence of these mechanisms on structural, optical and morphological properties of the films has been studied. Cd_1_-_xZn_xS thin films were synthesized by chemical bath deposition using an ammonia-free alkaline solution. Microstructural analysis by X-ray diffraction showed that all deposited films grew with hexagonal structure and crystallite sizes decreased as the Zn concentration in the film increased. Optical measurements indicated a high optical transmission between 75% and 90% for wavelengths above the absorption edge. Band gap value increased from 2.48 eV to 2.62 eV, and the refractive index values for Cd_1_-_xZn_xS thin films decreased as the Zn increased. These changes in films and properties are related to a modification in growth mechanism of the Cd_1_-_xZn_xS thin films, with the influence of Zn(OH)_2 formation being more important as Zn in solution increases. (author)

  19. Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism

    Science.gov (United States)

    Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

    2014-03-01

    Three types of manganese oxide films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) under different growth rates and substrate temperatures. The structural characteristics and chemical compositions of the films were investigated by using in-situ reflection high-energy electron diffraction (RHEED), ex-situ X-ray diffraction, Raman, and X-ray photoelectron spectra (XPS). At a lower substrate temperature (730 K), the epitaxial film tends to form mixed phases with a coexistence of Mn3O4 and Mn5O8 in order to relieve the mismatch-strain. However, at a higher substrate temperature (750 K), all of the films crystallize into Mn3O4; the critical thickness of the film grown under a lower growth rate (7 Å/min) is much larger than that under a high growth rate (10 Å/min). When the film reaches a certain critical thickness, the surface will become fairly rough, and another oriented phase Mn3O4 would crystallize on such a surface.

  20. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  1. Development of Dye-Sensitized Solar Cells with Sputtered N-Doped TiO2 Thin Films: From Modeling the Growth Mechanism of the Films to Fabrication of the Solar Cells

    OpenAIRE

    Duarte, D. A.; Massi, M.; da Silva Sobrinho, A. S.

    2014-01-01

    In this paper, nitrogen-doped TiO2 thin films were deposited by DC reactive sputtering at different doping levels for the development of dye-sensitized solar cells. The mechanism of film growth during the sputtering process and the effect of the nitrogen doping on the structural, optical, morphological, chemical, and electronic properties of the TiO2 were investigated by numerical modeling and experimental methods. The influence of the nitrogen doping on the working principle of the prototype...

  2. Kinetics and mechanisms of the oxide film growth on the surface of α-Fe in transitional domains

    International Nuclear Information System (INIS)

    Mukhambetov, D.G.; Berber, N.N.; Kargin, D.B.; Chalaya, O.V.

    2003-01-01

    The object of this work was to study the kinetics of the α-Fe surface oxidation with prevailing cubic texture at temperatures of 450-500 deg. C. The basic conformity to natural laws and mechanisms of the two-phase thin oxide films grows are determined. (author)

  3. The Passive Film Growth Mechanism of New Corrosion-Resistant Steel Rebar in Simulated Concrete Pore Solution: Nanometer Structure and Electrochemical Study.

    Science.gov (United States)

    Jiang, Jin-Yang; Wang, Danqian; Chu, Hong-Yan; Ma, Han; Liu, Yao; Gao, Yun; Shi, Jinjie; Sun, Wei

    2017-04-14

    An elaborative study was carried out on the growth mechanism and properties of the passive film for a new kind of alloyed corrosion-resistant steel (CR steel). The passive film naturally formed in simulated concrete pore solutions (pH = 13.3). The corrosion resistance was evaluated by various methods including open circuit potential (OCP), linear polarization resistance (LPR) measurements, and electrochemical impedance spectroscopy (EIS). Meanwhile, the 2205 duplex stainless steel (SS steel) was evaluated for comparison. Moreover, the passive film with CR steel was studied by means of X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Atomic Force Microscope (AFM), and the Mott‑Schottky approach. The results showed that the excellent passivity of CR steel could be detected in a high alkaline environment. The grain boundaries between the fine passive film particles lead to increasing Cr oxide content in the later passivation stage. The filling of cation vacancies in the later passivation stage as well as the orderly crystalized inner layer contributed to the excellent corrosion resistance of CR steel. A passive film growth model for CR steel was proposed.

  4. Mechanics of Thin Films

    Science.gov (United States)

    1992-02-06

    and the second geometry was that of squat cylinders (diameter 6.4 mm, height 6.4 mm). These two geometries were tested in thermal shock tests, and a...milder [13]. More recently, Lau, Rahman and stressa nce ntrati, tha n films of lmalla rat ve spc Delale calculated the free edge singularity for stress...thickness of 3 mm); the second geometry was that As an example of the shielding effect of thin films, we of squat cylinders (diameter 6.4 mm, height 6.4

  5. Development of Dye-Sensitized Solar Cells with Sputtered N-Doped TiO2 Thin Films: From Modeling the Growth Mechanism of the Films to Fabrication of the Solar Cells

    Directory of Open Access Journals (Sweden)

    D. A. Duarte

    2014-01-01

    Full Text Available In this paper, nitrogen-doped TiO2 thin films were deposited by DC reactive sputtering at different doping levels for the development of dye-sensitized solar cells. The mechanism of film growth during the sputtering process and the effect of the nitrogen doping on the structural, optical, morphological, chemical, and electronic properties of the TiO2 were investigated by numerical modeling and experimental methods. The influence of the nitrogen doping on the working principle of the prototypes was investigated by current-voltage relations measured under illuminated and dark conditions. The results indicate that, during the film deposition, the control of the oxidation processes of the nitride layers plays a fundamental role for an effective incorporation of substitutional nitrogen in the film structure and cells built with nitrogen-doped TiO2 have higher short-circuit photocurrent in relation to that obtained with conventional DSSCs. On the other hand, DSSCs built with nondoped TiO2 have higher open-circuit voltage. These experimental observations indicate that the incorporation of nitrogen in the TiO2 lattice increases simultaneously the processes of generation and destruction of electric current.

  6. Research and development of photovoltaic power system. Study on growth mechanism of a-Si:H and preparation of the stable, high quality films; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon no seimaku kiko to kohinshitsuka

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, M [Hiroshima University, Hiroshima (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a film forming mechanism for amorphous silicon for solar cells and its quality improvement. In in-situ observation on plasma CVD surface reaction by using the total reflection infrared absorbing spectroscopy, an observation on a real time basis was performed on the reaction process of an a-Si:H surface in contact with gas mixture plasma composed of SiH4 + CH4. In microscopic observation on initial processes of amorphous silicon growth, surface morphological change before and after a-Si:H deposition at 200{degree}C was observed by using an inter-atomic force microscope. The observation verified that a-Si:H has grown to an atomic layer. In research on defect density in a-Si:H fabricated under high-speed film forming conditions, analysis was made on correlation between the film forming speed at 250{degree}C and defect density in the film. Other research works include those on a high-quality a-SiGe:H film fabricated by using the nanometer film forming/hydrogen plasma annealing method, modulated doping into multi-layer films of a-Si:H/a-Ge:H, and thin film transistor using very thin multi layer films of a-Si:H/a-Ge:H. 5 refs., 12 figs.

  7. Growth of anodic films on niobium

    International Nuclear Information System (INIS)

    Gomes, M.A.B.; Bulhoes, L.O.S.

    1988-01-01

    The analysis of the response of the galvanostatic growth of anodic films on niobium metal in aqueous solutions is shown. The first spark voltage showed a dependence upon value of current density that could be explained as the incorporation of anions into the film. (M.J.C.) [pt

  8. Growth of organic films on indoor surfaces

    DEFF Research Database (Denmark)

    Weschler, Charles J.; Nazaroff, W. W.

    2017-01-01

    predictions indicate that film growth would primarily be influenced by the gas-phase concentration of SVOCs with octanol-air partitioning (Koa) values in the approximate range 10≤log Koa≤13. Within the relevant range, SVOCs with lower values will equilibrate with the surface film more rapidly. Over time...

  9. GaN growth via HVPE on SiC/Si substrates: growth mechanisms

    Science.gov (United States)

    Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

    2017-11-01

    The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

  10. Role of nucleation in nanodiamond film growth

    International Nuclear Information System (INIS)

    Lifshitz, Y.; Lee, C.H.; Wu, Y.; Zhang, W.J.; Bello, I.; Lee, S.T.

    2006-01-01

    Nanodiamond films were deposited using different microwave plasma chemical vapor deposition schemes following several nucleation pretreatment methods. The nucleation efficiency and the films structure were investigated using scanning and transmission electron microscopy and Raman spectroscopy. C 2 dimer growth (CH 4 and H 2 in 90% Ar) cannot nucleate diamond and works only on existing diamond surfaces. The methyl radical process (up to 20% CH 4 in H 2 ) allows some nucleation probability on appropriate substrates. Prolonged bias enhanced nucleation initiates both diamond nucleation and growth. C 2 dimer growth results in pure nanodiamond free of amorphous carbon, while prolonged bias enhanced nucleation forms an amorphous carbon/nanodiamond composite

  11. Mechanisms of fatigue in LIGA Ni MEMS thin films

    International Nuclear Information System (INIS)

    Yang, Y.; Imasogie, B.I.; Allameh, S.M.; Boyce, B.; Lian, K.; Lou, J.; Soboyejo, W.O.

    2007-01-01

    This paper presents the results of an experimental study of the mechanisms of fatigue in LIGA Ni micro-electro-mechanical systems (MEMS) thin films with micro-scale columnar and nano-scale equiaxed grains. Stress-life behavior is reported for films with thicknesses of 70 and 270 μm. The stress-life data are compared with previously reported data for Ni MEMS films and bulk Ni. The films with the nano-scale grains (15 nm average grain size) are shown to have higher strength and fatigue resistance (stress-life data) than those with columnar grain structures. The thicker films (with a columnar microstructure) are also shown to have comparable fatigue life to annealed Ni, while the thinner films (with a columnar microstructure) have comparable fatigue life to wrought Ni. The underlying mechanisms of crack nucleation and growth are elucidated via scanning and transmission electron microscopy. These reveal the formation of slip bands and surface oxides and crystallographic surface/sub-surface crack nucleation and growth in the films with the columnar structures. Surface and corner crack nucleations (from pre-existing defects) are observed in the nanostructured films. The implications of the results are discussed for the analyses of fatigue in nickel MEMS structures

  12. Growth of ultra-thin Ag films on Ni(111)

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Axel; Flege, Jan Ingo; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany); Senanayake, Sanjaya [Chemistry Department, Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Alamgir, Faisal [Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

    2009-07-01

    The physical and chemical properties of ultra-thin metal films on metallic substrates strongly depend on their morphology and the structure of the buried interface. Hence, detailed knowledge of the growth mechanisms is essential for the creation of new functional materials with novel characteristics. In this contribution, we present a comprehensive structural study of the growth and properties of epitaxial Ag films on Ni(111) by in-situ low energy electron microscopy (LEEM). For lower temperatures, the growth of the Ag film proceeds in a Stranski-Krastanov mode after completion of the wetting layer, while for higher temperatures layer-by-layer growth is observed. Quantitative information about the film structure were obtained by analyzing the intensity-voltage (I-V) dependence of the local electron reflectivity (IV-LEEM). The corresponding I(V) spectra showed intensity oscillations depending on local thickness of the Ag film due to the quantum size effect (QSE). Modeling of the I(V) spectra was performed both within the framework of a one-dimensional Kronig-Penney model and multiple scattering IV-LEED calculations. The results of both approaches concerning the variation of the layer spacings and interface characteristics for different temperatures and film thicknesses will be discussed.

  13. New phenomena in epitaxial growth: solid films on quasicrystalline substrates

    International Nuclear Information System (INIS)

    Fournee, V; Thiel, P A

    2005-01-01

    An overview is given of the research conducted in the field of solid film growth on quasiperiodic surfaces. An atomistic description of quasicrystalline surfaces is presented and discussed in relation to bulk structural models. The various systems for which thin film growth has been attempted so far are reviewed. Emphasis is placed on the nucleation mechanisms of the solid films, on their growth modes in relation to the nature of the deposited metals, on the possibility of intermixing or alloying at the interface and on the epitaxial relationships at the crystal-quasicrystal interfaces. We also describe situations where the deposited elements adopt a quasiperiodic structure, which opens up the possibility of extending our understanding of the relation between quasiperiodicity and the physical properties of such structurally and chemically complex solids. (topical review)

  14. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  15. Growth Mechanism of Microbial Colonies

    Science.gov (United States)

    Zhu, Minhui; Martini, K. Michael; Kim, Neil H.; Sherer, Nicholas; Lee, Jia Gloria; Kuhlman, Thomas; Goldenfeld, Nigel

    Experiments on nutrient-limited E. coli colonies, growing on agar gel from single cells reveal a power-law distribution of sizes, both during the growth process and in the final stage when growth has ceased. We developed a Python simulation to study the growth mechanism of the bacterial population and thus understand the broad details of the experimental findings. The simulation takes into account nutrient uptake, metabolic function, growth and cell division. Bacteria are modeled in two dimensions as hard circle-capped cylinders with steric interactions and elastic stress dependent growth characteristics. Nutrient is able to diffuse within and between the colonies. The mechanism of microbial colony growth involves reproduction of cells within the colonies and the merging of different colonies. We report results on the dynamic scaling laws and final state size distribution, that capture in semi-quantitative detail the trends observed in experiment. Supported by NSF Grant 0822613.

  16. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  17. PVA/Polysaccharides Blended Films: Mechanical Properties

    OpenAIRE

    Silva, Fábio E. F.; Di-Medeiros, Maria Carolina B.; Batista, Karla A.; Fernandes, Kátia F.

    2013-01-01

    Blends of polyvinyl alcohol (PVA) and angico gum (AG) and/or cashew gum (CG) were used to produce films by casting method. Morphological and mechanical properties of these films were studied and compared to the properties of a commercial collagen membrane of bovine origin (MBO). The films presented thickness varying from 70 to 140 μm (PVA/AG) and 140 to 200 μm (PVA/CG). Macroscopic analysis showed that a PVA/CG film was very similar to MBO regarding the color and transparency. The higher valu...

  18. PVA/Polysaccharides Blended Films: Mechanical Properties

    Directory of Open Access Journals (Sweden)

    Fábio E. F. Silva

    2013-01-01

    Full Text Available Blends of polyvinyl alcohol (PVA and angico gum (AG and/or cashew gum (CG were used to produce films by casting method. Morphological and mechanical properties of these films were studied and compared to the properties of a commercial collagen membrane of bovine origin (MBO. The films presented thickness varying from 70 to 140 μm (PVA/AG and 140 to 200 μm (PVA/CG. Macroscopic analysis showed that a PVA/CG film was very similar to MBO regarding the color and transparency. The higher values of tensile strength (TS and elastic modulus (EM were observed in the film. On the other hand, PVA/CG and PVA/CG-AG presented the highest value of percentage of elongation (E%. Pearson’s Correlation Analysis revealed a positive correlation between TS and EM and a negative correlation between E% and EM. The PVA/CG film presented mechanical properties very similar to MBO, with the advantage of a higher E% (11.96 than MBO (2.94. The properties of the PVA blended films depended on the polysaccharide added in the blend, as well as the acid used as a catalyst. However, all produced films presented interesting mechanical characteristics which enables several biotechnological applications.

  19. Investigation of Au/Au(100) film growth with energetic deposition by kinetic Monte Carlo simulation

    International Nuclear Information System (INIS)

    Zhang Qingyu; Ma Tengcai; Pan Zhengying; Tang Jiayong

    2000-01-01

    The Au/Au(100) epitaxial growth with energetic deposition was simulated by using kinetic Monte Carlo method. The influences of energetic atoms on morphology and atomistic processes in the early stage of film growth were investigated. The reentrant layer-by-layer growth was observed in the temperature range of 450 K to 100 K. The authors found the energetic atoms can promote the nucleation and island growth in the early stages of film growth and enhance the smoothness of film surface at temperatures of film growth in 3-dimensional mode and in quasi-two-dimensional mode. The atomistic mechanism that promotes the nucleation and island growth and enhances the smoothness of film surface is discussed

  20. Dynamical mechanism of the liquid film motor

    Science.gov (United States)

    Liu, Zhong-Qiang; Li, Ying-Jun; Zhang, Guang-Cai; Jiang, Su-Rong

    2011-02-01

    The paper presents a simple dynamical model to systemically explain the rotation mechanism of the liquid film motor reported by experiments. The field-induced-plasticity effect of the liquid film is introduced into our model, in which the liquid film in crossed electric fields is considered as a Bingham plastic fluid with equivalent electric dipole moment. Several analytic results involving the torque of rotation, the scaling relation of the threshold fields, and the dynamics equation of a square film and its solution are obtained. We find that the rotation of the liquid film motor originates from the continuous competition between the destruction and the reestablishment of the polarization equilibrium maintained by the external electric field, which is free from the boundary effects. Most experimental phenomena observed in direct current electric fields are interpreted well.

  1. Visualization modeling of thin film growth in photodeposition processes

    International Nuclear Information System (INIS)

    Mirchin, N.; Sidi, M.; Muchnik, Y.; Peled, A.

    2003-01-01

    A computer visualization technique, which analyzes and predicts the spatio-temporal evolution of thin film deposition and growth processes is given. It relies on microscopy sampled or computer generated synthetic micrographs of particles. These are then simulated for deposition, aggregation and coagulation during thin film growth by frequency domain transform techniques. Particle sources and diffusion operators on surfaces are used to predict with high temporal resolution, unattained by real world microscopy the surface structure evolution as time samples and time movies. The simulation program was used to investigate deposition and diffusive profiles in photodeposition experiments, starting from initial synthetic micrographs based on real world scanning electron microscopy (SEM) images. The surface microstructure time 'tracking' scheme described here relies on transforming the original image of the deposited particles into a Fourier spatial frequency domain image. The physical models used are that of a material random deposition source and subsequent surface redistribution due to diffusion and other coalescence material surface flow mechanisms. The 2-D inverse Fourier transform (IFT) is finally used to obtain back the real space-time images representing the surface spatio-temporal films morphology changes. False color representation of the images allows for a better discrimination of the films growing details especially during the fast pre-compact thin film layer formation on the substrate

  2. Visualization modeling of thin film growth in photodeposition processes

    Energy Technology Data Exchange (ETDEWEB)

    Mirchin, N.; Sidi, M.; Muchnik, Y.; Peled, A

    2003-03-15

    A computer visualization technique, which analyzes and predicts the spatio-temporal evolution of thin film deposition and growth processes is given. It relies on microscopy sampled or computer generated synthetic micrographs of particles. These are then simulated for deposition, aggregation and coagulation during thin film growth by frequency domain transform techniques. Particle sources and diffusion operators on surfaces are used to predict with high temporal resolution, unattained by real world microscopy the surface structure evolution as time samples and time movies. The simulation program was used to investigate deposition and diffusive profiles in photodeposition experiments, starting from initial synthetic micrographs based on real world scanning electron microscopy (SEM) images. The surface microstructure time 'tracking' scheme described here relies on transforming the original image of the deposited particles into a Fourier spatial frequency domain image. The physical models used are that of a material random deposition source and subsequent surface redistribution due to diffusion and other coalescence material surface flow mechanisms. The 2-D inverse Fourier transform (IFT) is finally used to obtain back the real space-time images representing the surface spatio-temporal films morphology changes. False color representation of the images allows for a better discrimination of the films growing details especially during the fast pre-compact thin film layer formation on the substrate.

  3. Selective LPCVD growth of graphene on patterned copper and its growth mechanism

    Science.gov (United States)

    Zhang, M.; Huang, B.-C.; Wang, Y.; Woo, J. C. S.

    2016-12-01

    Copper-catalyzed graphene low-pressure chemical-vapor deposition (LPCVD) growth has been regarded as a viable solution towards its integration to CMOS technology, and the wafer-bonding method provides a reliable alternative for transferring the selective graphene grown on a patterned metal film for IC manufacturing. In this paper, selective LPCVD graphene growth using patterned copper dots has been studied. The Raman spectra of grown films have demonstrated large dependence on the growth conditions. To explain the results, the growth mechanisms based on surface adsorption and copper-vapor-assisted growth are investigated by the comparison between the blanket copper films with/without the additional copper source. The copper vapor density is found to be critical for high-quality graphene growth. In addition, the copper-vapor-assisted growth is also evidenced by the carbon deposition on the SiO2 substrate of the patterned-copper-dot sample and chamber wall during graphene growth. This growth mechanism explains the correlation between the growth condition and Raman spectrum for films on copper dots. The study on the copper-catalyzed selective graphene growth on the hard substrate paves the way for the synthesis and integration of the 2D material in VLSI.

  4. Thin-film growth and the shadow instability

    International Nuclear Information System (INIS)

    Karunasiri, R.P.U.; Bruinsma, R.; Rudnick, J.

    1989-01-01

    We propose a growth model for deposition of thin amorphous films by the sputtering technique. For small values of the diffusion constant, the film develops a self-similar mountain landscape. As the diffusion constant is increased a regime is reached where growth of compact flat films is possible up to a critical height. Further deposition leads to surface roughening

  5. Nucleation and growth microstructural study of ti films on 304 SS substrates

    Directory of Open Access Journals (Sweden)

    Rogério de Almeida Vieira

    2004-09-01

    Full Text Available Coating of steel surfaces with titanium films has been studied with the objective to protect them against corrosion, and to create an intermediate film for CVD diamond and TiN film deposition. In this work, the nucleation, growth mechanisms and microstructural formation of the titanium films deposited on 304 stainless steel (304 SS substrate are presented and discussed. The titanium films of variable thickness were obtained by vapour phase deposition produced by electron beam. The surfaces of these samples were observed by scanning electron microscopy. The cross sections of these samples were observed by using an atomic force microscope. The Ti film-304 SS interfaces were analyzed by X-ray diffraction. The results showed that titanium films have a columnar growth. The Ti film-304 SS interface had a residual compression stress at room temperature due to the inter-diffusion process.

  6. Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yang, E-mail: yang.liu@helmholtz-berlin.de; Plate, Paul, E-mail: paul.plate@helmholtz-berlin.de; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany); Bartsch, Peter [Beuth Hochschule für Technik Berlin, Fachbereich VIII Maschinenbau, Veranstaltungstechnik, Verfahrenstechnik (Germany); Fiechter, Sebastian; Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany); Fischer, Christian-Herbert [Freie Universität Berlin, Institute of Chemistry and Biochemistry (Germany)

    2017-04-15

    Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

  7. Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

    International Nuclear Information System (INIS)

    Liu, Yang; Plate, Paul; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina; Bartsch, Peter; Fiechter, Sebastian; Lux-Steiner, Martha Ch.; Fischer, Christian-Herbert

    2017-01-01

    Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

  8. Physical phenomena stipulating nucleus formation, growth and structure films

    Energy Technology Data Exchange (ETDEWEB)

    Aleksandrov, L N [AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

    1975-03-01

    This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.

  9. Surface smoothening effects on growth of diamond films

    Science.gov (United States)

    Reshi, Bilal Ahmad; Kumar, Shyam; Kartha, Moses J.; Varma, Raghava

    2018-04-01

    We have carried out a detailed study of the growth dynamics of the diamond film during initial time on diamond substrates. The diamond films are deposited using Microwave Plasma Chemical Vapor Deposition (MPCVD) method for different times. Surface morphology and its correlation with the number of hours of growth of thin films was invested using atomic force microscopy (AFM). Diamond films have smooth interface with average roughness of 48.6873nm. The initial growth dynamics of the thin film is investigated. Interestingly, it is found that there is a decrease in the surface roughness of the film. Thus a smoothening effect is observed in the grown films. The film enters into the growth regime in the later times. Our results also find application in building diamond detector.

  10. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  11. Growth Mechanism of Nanowires: Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  12. Nanoscale strengthening mechanisms in metallic thin film systems

    Science.gov (United States)

    Schoeppner, Rachel Lynn

    Nano-scale strengthening mechanisms for thin films were investigated for systems governed by two different strengthening techniques: nano-laminate strengthening and oxide dispersion strengthening. Films were tested under elevated temperature conditions to investigate changes in deformation mechanisms at different operating temperatures, and the structural stability. Both systems exhibit remarkable stability after annealing and thus long-term reliability. Nano-scale metallic multilayers with smaller layer thicknesses show a greater relative resistance to decreasing strength at higher temperature testing conditions than those with larger layer thicknesses. This is seen in both Cu/Ni/Nb multilayers as well as a similar tri-component bi-layer system (Cu-Ni/Nb), which removed the coherent interface from the film. Both nanoindentation and micro-pillar compression tests investigated the strain-hardening ability of these two systems to determine what role the coherent interface plays in this mechanism. Tri-layer films showed a higher strain-hardening ability as the layer thickness decreased and a higher strain-hardening exponent than the bi-layer system: verifying the presence of a coherent interface increases the strain-hardening ability of these multilayer systems. Both systems exhibited hardening of the room temperature strength after annealing, suggesting a change in microstructure has occurred, unlike that seen in other multilayer systems. Oxide dispersion strengthened Au films showed a marked increase in hardness and wear resistance with the addition of ZnO particles. The threshold for stress-induced grain-refinement as opposed to grain growth is seen at concentrations of at least 0.5 vol%. These systems exhibited stable microstructures during thermal cycling in films containing at least 1.0%ZnO. Nanoindentation experiments show the drop in hardness following annealing is almost completely attributed to the resulting grain growth. Four-point probe resistivity

  13. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  14. Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

    DEFF Research Database (Denmark)

    Huhtinen, H.; Irjala, M.; Paturi, P.

    2010-01-01

    The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

  15. Particle growth mechanisms in Ag-ZrO2 and Au-ZrO2 granular films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Konstantinovic, Zorica; Muro, Montserrat Garcia del; Varela, Manuel; Batlle, Xavier; Labarta, AmIlcar

    2006-01-01

    Thin films consisting of Ag and Au nanoparticles embedded in amorphous ZrO 2 matrix were grown by pulsed laser deposition in a wide range of metal volume concentrations in the dielectric regime (0.08 Ag Au c (Ag)∼0.28 and x c (Au)∼0.52)

  16. Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon

    Science.gov (United States)

    Narula, Udit; Tan, Cher Ming; Lai, Chao Sung

    2017-03-01

    Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

  17. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  18. Atmosphere influence on in situ ion beam analysis of thin film growth

    International Nuclear Information System (INIS)

    Lin, Yuping; Krauss, A.R.; Gruen, D.M.; Chang, R.P.H.; Auciello, O.H.; Schultz, J.A.

    1994-01-01

    In situ, nondestructive surface characterization of thin-film growth processes in an environment of chemically active gas at pressures of several mTorr is required both for the understanding of growth processes in multicomponent films and layered heterostructures and for the improvement of process reproducibility and device reliability. The authors have developed a differentially pumped pulsed ion beam surface analysis system that includes ion scattering spectroscopy (ISS) and direct recoil spectroscopy (DRS), coupled to an automated ion beam sputter-deposition system (IBSD), to study film growth processes in an environment of chemically active gas, such as required for the growth of oxide, nitride, or diamond thin films. The influence of gas-phase scattering and gas-surface interactions on the ISS and DRS signal intensity and peak shape have been studied. From the intensity variation as a function of ambient gas pressure, the authors have calculated the mean free path and the scattering cross-section for a given combination of primary ion species and ambient gas. Depending on the system geometry and the combination of primary beam and background, it is shown that surface-specific data can be obtained during thin-film growth at pressures ranging from a few mtorr to approximately 1 Torr. Detailed information such as surface composition, structure, and film growth mechanism may be obtained in real-time, making ion beam analysis an ideal nondestructive, in situ probe of thin-film growth processes

  19. Nanowire growth from the viewpoint of the thin film polylayer growth theory

    Science.gov (United States)

    Kashchiev, Dimo

    2018-03-01

    The theory of polylayer growth of thin solid films is employed for description of the growth kinetics of single-crystal nanowires. Expressions are derived for the dependences of the height h and radius r of a given nanowire on time t, as well as for the h(r) dependence. These dependences are applicable immediately after the nanowire nucleation on the substrate and thus include the period during which the nucleated nanowire changes its shape from that of cap to that of column. The analysis shows that the nanowire cap-to-column shape transition is continuous and makes it possible to kinetically define the nanowire shape-transition radius by means of the nanowire radial and axial growth rates. The obtained h(t), r(t) and h(r) dependences are found to provide a good description of available experimental data for growth of self-nucleated GaN nanowires by the vapor-solid mechanism.

  20. Gas-phase mechanisms in the growth of ZrCyN1-y thin films by pulsed reactive crossed-beam laser ablation

    International Nuclear Information System (INIS)

    Spillmann, H.; Clerc, C.; Doebeli, M.; Willmott, P.R.

    2002-01-01

    Superhard zirconium carbonitride films have been grown via pulsed reactive crossed-beam laser ablation (PRCLA) using zirconium metal and a nitrogen- and carbon-containing gas pulse mixture. The control of stoichiometry was much simplified by using the thermally stable gas-phase species N 2 and CH 4 . The gas-phase processes are investigated using quadrupole mass spectroscopy and optical emission spectroscopy. The excitation of the ablation plume depends intimately on the collision partner of the gas pulse, in particular on its density of states and the probability of energy transfer to internal degrees of freedom

  1. Mechanics of evolving thin film structures

    Science.gov (United States)

    Liang, Jim

    In the Stranski-Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, both the surface energy and the elastic energy drive the islands to coarsen. Motivated by several related studies, we suggest that stable islands should form when a stiff ceiling is placed at a small gap above the film. We show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coarsen laterally. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. In lithographically-induced self-assembly, when a two-phase fluid confined between parallel substrates is subjected to an electric field, one phase can self-assemble into a triangular lattice of islands in another phase. We describe a theory of the stability of the island lattice. The islands select the equilibrium diameter to minimize the combined interface energy and electrostatic energy. Furthermore, we study compressed SiGe thin film islands fabricated on a glass layer, which itself lies on a silicon wafer. Upon annealing, the glass flows, and the islands relax. A small island relaxes by in-plane expansion. A large island, however, wrinkles at the center before the in-plane relaxation arrives. The wrinkles may cause significant tensile stress in the island, leading to fracture. We model the island by the von Karman plate theory and the glass layer by the Reynolds lubrication theory. Numerical simulations evolve the in-plane expansion and the wrinkles simultaneously. We determine the critical island size, below which in-plane expansion prevails over wrinkling. Finally, in devices that integrate dissimilar materials in small dimensions, crack extension in one material often accompanies inelastic deformation in another. We analyze a channel crack advancing in an elastic film under tension, while an underlayer creeps. We use a two

  2. Self-Limited Growth in Pentacene Thin Films.

    Science.gov (United States)

    Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

    2017-04-05

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

  3. ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

    International Nuclear Information System (INIS)

    Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

    2004-01-01

    The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

  4. Growth of anodic oxide films on oxygen-containing niobium

    Energy Technology Data Exchange (ETDEWEB)

    Habazaki, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)]. E-mail: habazaki@eng.hokudai.ac.jp; Ogasawara, T. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Konno, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Shimizu, K. [University Chemical Laboratory, Keio University, Yokohama 223-8522 (Japan); Asami, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Saito, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Nagata, S. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Skeldon, P. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)

    2005-09-20

    The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

  5. Intrinsic flux pinning mechanisms in different thickness MgB2 films

    Directory of Open Access Journals (Sweden)

    C. Yang

    2017-03-01

    Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

  6. Correlating defect density with growth time in continuous graphene films.

    Science.gov (United States)

    Kang, Cheong; Jung, Da Hee; Nam, Ji Eun; Lee, Jin Seok

    2014-12-01

    We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene. Besides, the reaction parameters influenced the number of layers, degree of defects and uniformity of the graphene films. The increase in growth temperature and annealing time tends to accelerate the graphene growth rate and increase the diffusion length, respectively, thereby increasing the average size of graphene domains. In addition, we confirmed that the number of pinholes reduced with increase in the growth time. Micro-Raman analysis of the as-grown graphene films confirmed that the continuous graphene monolayer film with low defects and high uniformity could be obtained with prolonged reaction time, under the appropriate annealing time and growth temperature.

  7. Epitaxial growth of fcc Ti films on Al(001) surfaces

    International Nuclear Information System (INIS)

    Saleh, A.A.; Shutthanandan, V.; Shivaparan, N.R.; Smith, R.J.; Tran, T.T.; Chambers, S.A.

    1997-01-01

    High-energy ion scattering (HEIS), x-ray photoelectron spectroscopy, and x-ray photoelectron diffraction (XPD) were used to study the growth of thin Ti films on Al(001) surfaces. The Al surface peak area in the backscattered ion spectrum of MeV He + ions, incident along the [00 bar 1] direction, was used to monitor the atomic structure of the Ti films during growth. An initial decrease in the area was observed indicating epitaxial film growth. This decrease continued up to a critical film thickness of about 5.5 ML, after which point the structure of the film changed. Titanium films 3, 5, and 9 ML thick were characterized using XPD in the same chamber. Both the HEIS and XPD results show that the Ti films grow with an fcc structure on Al(001). A tetragonal distortion of 2.4% in the fcc Ti film was measured using ions incident along the [10 bar 1] direction. Although there is a general similarity of fcc Ti growth on both Al(001) and Al(110), the submonolayer growth regime does show differences for the two surfaces. copyright 1997 The American Physical Society

  8. Molecular mechanisms of crystal growth

    International Nuclear Information System (INIS)

    Pina, C. M.

    2000-01-01

    In this paper I present an example of the research that the Mineral Surface Group of the Munster University is conducting in the field of Crystal Growth. Atomic Force Microscopy (Am) in situ observations of different barite (BaSO4) faces growing from aqueous solutions, in combination with computer simulations of the surface attachment of growth units allows us to test crystal growth models. Our results demonstrate the strong structural control that a crystal can exert on its own growth, revealing also the limitation of the classical crystal growth theories (two dimensional nucleation and spiral growth models) in providing a complete explanation for the growth behaviour at a molecular scale. (Author) 6 refs

  9. Structural evolution and growth mechanisms of RF-magnetron sputter-deposited hydroxyapatite thin films on the basis of unified principles

    Science.gov (United States)

    Ivanova, Anna A.; Surmeneva, Maria A.; Surmenev, Roman A.; Depla, Diederik

    2017-12-01

    The structural features of RF-magnetron sputter-deposited hydroxyapatite (HA) coatings are investigated in order to reveal the effect of the working gas composition and the sample position of the substrate relative to the target erosion zone. The film properties were observed to change as a result of bombardment with energetic ions. XRD analysis of the coated substrates indicates that with the increase of the ion-to-atom ratio, the fiber texture changes from a mixed (11 2 bar 2) + (0002) over (0002) orientation, finally reaching a (30 3 bar 0) out-of-plane orientation at high ion-to-atom ratios. TEM reveals that the microstructure of the HA coating consists of columnar grains and differs with the coating texture. The contribution of Ji/Ja to the development of microstructure and texture of the HA coating is schematically represented and discussed. The obtained results may contribute substantially to the progress of research into the development of HA coatings with tailored properties, and these coatings may be applied on the surfaces of metal implants used in bone surgery.

  10. Study both films structure and fractal growth in the T-10 tokamak

    International Nuclear Information System (INIS)

    Khimchenko, L.N.; Budaev, V.P.; Guseva, M.I.; Kamneva, S.A.; Kolbasov, B.N.; Kuteev, B.V.; Martynenko, Yu.V.; Svechnikov, N.Yu.; Stankevich, V.G.; Loginov, B.A.; Romanov, P.B.

    2005-01-01

    In the paper results of films growth mechanism study, their internal structure are summarized. The mechanism leading to hydrogen capture effect on the first wall at over dusting stage is stated. Films internal structure have been studied with help of synchrotron radiation, electron paramagnetic resonance, IR reflection spectra, thermal gravimetric methods, spectroscopy in the vision spectrum range and UV vacuum range. Structure of the films surfaces have been examined with help of electron microscopy, probe scanning tunnel and atom-force microscopy, as well as miniature scanning tunnel microscope placed in the T-10 tokamak

  11. Morphology and growth behavior of O_2-free chemical bath deposited ZnS thin films

    International Nuclear Information System (INIS)

    Jet Meitzner, K.; Tillotson, Brock M.; Siedschlag, Amanda T.; Moore, Frederick G.; Kevan, Stephen D.; Richmond, Geraldine L.

    2015-01-01

    We investigate the role of reagent concentrations and ambient O_2 on the morphology and growth behavior of ZnS thin films grown with the chemical bath deposition method. We investigate the role of substrate on film morphology, and find significant differences between films deposited on SiO_2 versus Si. The films are also sensitive to dissolved O_2 in the bath, as it causes a layer of SiO_2 to form at the ZnS/Si interface during deposition. Degassing of solutions and an N_2 atmosphere are effective to minimize this oxidation, allowing deposition of ZnS films directly onto Si. Under these conditions, we examine film properties as they relate to reagent bath concentrations. As the reagent concentrations are decreased, both the film roughness and growth rate decrease linearly. We also observe deformation and shifting of X-ray diffraction peaks that increases with decreasing reagent concentrations. The shifts are characteristic of lattice compression (caused by the substitution of oxygen for sulfur), and the deformation is characteristic of distortion of the lattice near crystal grain interfaces (caused by tensile stress from interatomic forces between neighboring crystal grains). At the weakest concentrations, the low roughness suggests a mixed growth mode in which both clusters and individual ZnS nanocrystallites contribute to film growth. With increasing reagent concentrations, the growth mode shifts and becomes dominated by deposition of clusters. - Highlights: • We deposit ZnS thin films by chemical bath deposition in an O_2-free environment. • The O_2-free environment is effective to minimize oxidation of the Si substrate. • The dominant growth mechanism changes with reagent concentrations. • Film morphology and composition change with reagent concentrations. • X-ray diffraction reveals tensile stress between ZnS crystal grains.

  12. Growth and characterization of ultrathin epitaxial MnO film on Ag(001)

    Science.gov (United States)

    Kundu, Asish K.; Menon, Krishnakumar S. R.

    2016-07-01

    We present here a comprehensive growth procedure to obtain a well-ordered MnO(001) ultrathin film on Ag(001) substrate. Depending upon the oxygen partial pressure during the growth, different phases of manganese oxide have been detected by Low Energy Electron Diffraction (LEED) and X-ray Photoelectron Spectroscopic (XPS) studies. A modified growth scheme has been adopted to get well-ordered and stoichiometric MnO(001) ultrathin film. The detailed growth mechanism of epitaxial MnO film on Ag(001) has been studied step by step, using LEED and XPS techniques. Observation of sharp (1 × 1) LEED pattern with a low inelastic background, corresponds to a long-range atomic order with low defect densities indicating the high structural quality of the film. The Mn 2p and Mn 3s core-level spectra confirm the oxidation state as well as the stoichiometry of the grown MnO films. Apart from the growth optimization, the evolution of strain relaxation of the MnO(001) film with film thickness has been explored.

  13. Mechanical properties of polyelectrolyte multilayer self-assembled films

    International Nuclear Information System (INIS)

    Dai Xinhua; Zhang Yongjun; Guan Ying; Yang Shuguang; Xu Jian

    2005-01-01

    The mechanical properties of electrostatic self-assembled multilayer films from polyacrylic acid (PAA) and C 60 -ethylenediamine adduct (C 60 -EDA) or poly(allylamine hydrochloride) (PAH) were evaluated by atomic force microscopy (AFM) wear experiments. Because of the higher molecular weight of PAH, the wear resistance of the (PAH/PAA) 10 film is higher than that of the (PAH/PAA) 2 (C 60 -EDA/PAA) 8 film; that is, the former is mechanically more stable than the latter. The mechanical stability of both films can be improved significantly by heat treatment, which changes the nature of the linkage from ionic to covalent. The AFM measurement also reveals that the (PAH/PAA) 2 (C 60 -EDA/PAA) 8 film is softer than the (PAH/PAA) 10 film. The friction properties of the heated films were measured. These films can be developed as potential lubrication coatings for microelectromechanical systems

  14. Surface preparation for the heteroepitactic growth of ceramic thin films

    International Nuclear Information System (INIS)

    Norton, M.G.; Summerfelt, S.R.; Carter, C.B.

    1990-01-01

    The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron-transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO 3 , and (001) LaAlO 3

  15. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Headrick, Randall [Univ. of Vermont, Burlington, VT (United States)

    2016-03-18

    In this research program, we have explored the fundamental limits for thin film deposition in both crystalline and amorphous (i.e. non-crystalline) materials systems. For vacuum-based physical deposition processes such as sputter deposition, the background gas pressure of the inert gas (usually argon) used as the process gas has been found to be a key variable. Both a roughness transition and stress transition as a function of pressure have been linked to a common mechanism involving collisions of energetic particles from the deposition source with the process inert gas. As energetic particles collide with gas molecules in the deposition process they lose their energy rapidly if the pressure (and background gas density) is above a critical value. Both roughness and stress limit important properties of thin films for applications. In the area of epitaxial growth we have also discovered a related effect; there is a critical pressure below which highly crystalline layers grow in a layer-by-layer mode. This effect is also though to be due to energetic particle thermalization and scattering. Several other important effects such as the observation of coalescence dominated growth has been observed. This mode can be likened to the behavior of two-dimensional water droplets on the hood of a car during a rain storm; as the droplets grow and touch each other they tend to coalesce rapidly into new larger circular puddles, and this process proceeds exponentially as larger puddles overtake smaller ones and also merge with other large puddles. This discovery will enable more accurate simulations and modeling of epitaxial growth processes. We have also observed that epitaxial films undergo a roughening transition as a function of thickness, which is attributed to strain induced by the crystalline lattice mismatch with the substrate crystal. In addition, we have studied another physical deposition process called pulsed laser deposition. It differs from sputter deposition due to the

  16. The crack growth mechanism in asphaltic mixes

    NARCIS (Netherlands)

    Jacobs, M.M.J.; Hopman, P.C.; Molenaar, A.A.A.

    1995-01-01

    The crack growth mechanism in asphalt concrete (Ac) mixes is studied. In cyclic tests on several asphaltic mixes crack growth is measured, both with crack foils and with cOD-gauges. It is found that crack growth in asphaltic mixes is described by three processes which are parallel in time: cohesive

  17. Growth dynamics of reactive-sputtering-deposited AlN films

    International Nuclear Information System (INIS)

    Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

    2005-01-01

    We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α loc =1, β loc =0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively

  18. Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

    Directory of Open Access Journals (Sweden)

    Akarapu Ashok

    2014-01-01

    Full Text Available Silicon dioxide (SiO2 thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs and microelectromechanical systems (MEMS. Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics.

  19. Chemical structural analysis of diamondlike carbon films: I. Surface growth model

    Science.gov (United States)

    Takabayashi, Susumu; Ješko, Radek; Shinohara, Masanori; Hayashi, Hiroyuki; Sugimoto, Rintaro; Ogawa, Shuichi; Takakuwa, Yuji

    2018-02-01

    The surface growth mechanisms of diamondlike carbon (DLC) films has been clarified. DLC films were synthesized in atmospheres with a fixed methane-to-argon ratio at different temperatures up to 700 °C by the photoemission-assisted glow discharge of photoemission-assisted plasma-enhanced chemical vapor deposition. The electrical resistivity of the films decreased logarithmically as the synthesis temperature was increased. Conversely, the dielectric constant of the films increased and became divergent at high temperature. However, the very high electrical resistivity of the film synthesized at 150 °C was retained even after post-annealing treatments at temperatures up to 500 °C, and divergence of the dielectric constant was not observed. Such films exhibited excellent thermal stability and retained large amounts of hydrogen, even after post-annealing treatments. These results suggest that numerous hydrogen atoms were incorporated into the DLC films during synthesis at low temperatures. Hydrogen atoms terminate carbon dangling bonds in the films to restrict π-conjugated growth. During synthesis at high temperature, hydrogen was desorbed from the interior of the growing films and π-conjugated conductive films were formed. Moreover, hydrogen radicals were chemisorbed by carbon atoms at the growing DLC surface, leading to removal of carbon atoms from the surface as methane gas. The methane molecules decomposed into hydrocarbons and hydrogen radicals through the attack of electrons above the surface. Hydrogen radicals contributed to the etching reaction cycle of the film; the hydrocarbon radicals were polymerized by reacting with other radicals and the methane source. The polymer radicals remained above the film, preventing the supply of the methane source and disrupting the action of argon ions. At high temperatures, the resultant DLC films were rough and thin.

  20. On the mechanics of thin films and growing surfaces

    KAUST Repository

    Holland, M. A.

    2013-05-24

    Many living structures are coated by thin films, which have distinct mechanical properties from the bulk. In particular, these thin layers may grow faster or slower than the inner core. Differential growth creates a balanced interplay between tension and compression and plays a critical role in enhancing structural rigidity. Typical examples with a compressive outer surface and a tensile inner core are the petioles of celery, caladium, or rhubarb. While plant physiologists have studied the impact of tissue tension on plant rigidity for more than a century, the fundamental theory of growing surfaces remains poorly understood. Here, we establish a theoretical and computational framework for continua with growing surfaces and demonstrate its application to classical phenomena in plant growth. To allow the surface to grow independently of the bulk, we equip it with its own potential energy and its own surface stress. We derive the governing equations for growing surfaces of zero thickness and obtain their spatial discretization using the finite-element method. To illustrate the features of our new surface growth model we simulate the effects of growth-induced longitudinal tissue tension in a stalk of rhubarb. Our results demonstrate that different growth rates create a mechanical environment of axial tissue tension and residual stress, which can be released by peeling off the outer layer. Our novel framework for continua with growing surfaces has immediate biomedical applications beyond these classical model problems in botany: it can be easily extended to model and predict surface growth in asthma, gastritis, obstructive sleep apnoea, brain development, and tumor invasion. Beyond biology and medicine, surface growth models are valuable tools for material scientists when designing functionalized surfaces with distinct user-defined properties. © The Author(s) 2013.

  1. Simulated Thin-Film Growth and Imaging

    Science.gov (United States)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  2. Transparent conducting film: Effect of mechanical stretching

    Indian Academy of Sciences (India)

    We describe in this paper a transparent conducting film (TCF). ... conducting carbon nanotube film which is crack-resistant for solar cell applications. ... CA 90095, USA; Nanocomp Technologies, Inc, 162 Pembroke Road, Concord, NH 03301 ...

  3. Decoding Nucleation and Growth of Zeolitic Imidazolate Framework Thin Films with Atomic Force Microscopy and Vibrational Spectroscopy.

    Science.gov (United States)

    Öztürk, Zafer; Filez, Matthias; Weckhuysen, Bert M

    2017-08-10

    The synthesis of metal-organic framework (MOF) thin films has garnered significant attention during the past decade. By better understanding the parameters governing the nucleation and growth of such thin films, their properties can be rationally tuned, empowering their application as (reactive) membranes. Here, a combined AFM-vibrational spectroscopy research strategy is employed to detail the chemistries governing the nucleation and growth of zeolitic imidazolate framework (ZIF) thin films, in particular isostructural Co-ZIF-67 and Zn-ZIF-8. First, a single step direct synthesis approach is used to investigate the influence of different synthesis parameters -metal/linker ratio, temperature, and metal type- on the thin film nucleation and growth behaviour. While the metal/linker ratio has a pronounced effect on the thin film nucleation rate, the temperature mainly influences the growth kinetics of nuclei forming the thin film. In addition, the nucleation and growth of ZIF thin films is shown to be highly dependent on the electronegativity of the metal type. Thin-film thickness control can be achieved by using a multistep synthesis strategy, implying repetitive applications of single step deposition under identical synthesis conditions, for which a growth mechanism is proposed. This study provides insight into the influence of synthesis parameters on the ZIF thin film properties, using tools at hand to rationally tune MOF thin film properties. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  4. Growth model of Au films on Ru(001)

    International Nuclear Information System (INIS)

    Canessa, E.; Calmetta, A.

    1992-06-01

    In an attempt to find generic features on the fractal growth of Au films deposited on Ru(001), a simple simulation model based on irreversible diffusion-limited aggregation (DLA) is discussed. Highly irregular two-dimensional dentritic islands of Au particles that gradually grow on a larger host lattice of Ru particles and have fractal dimension d f approx. 1.70 each, are generated via a multiple had-hoc version of the DLA algorithm for single aggregates. Annealing effects on the islands morphology are reproduced assuming different sticking probabilities at nearest-neighbour lattice sites of Au films on Ru(001). Using simulation data, islands growth are described in analogy to diffusion-limited, precipitate growth with soft impingement of precipities. This leads to analyse thin film island growth kinetics in such fractal systems and to predict a main peak in scattering intensity patterns due to interisland interference. (author). 12 refs, 4 figs

  5. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  6. Domain growth kinetics in stratifying foam films

    Science.gov (United States)

    Zhang, Yiran; Sharma, Vivek

    2015-11-01

    Baking bread, brewing cappuccino, pouring beer, washing dishes, shaving, shampooing, whipping eggs and blowing bubbles all involve creation of aqueous foam films. Typical foam films consist of two surfactant-laden surfaces that are ~ 5 nm - 10 micron apart. Sandwiched between these interfacial layers is a fluid that drains primarily under the influence of viscous and interfacial forces, including disjoining pressure. Interestingly, a layered ordering of micelles inside the foam films (thickness characteristic scaling laws. Though several studies have focused on the expansion dynamics of isolated domains that exhibit a diffusion-like scaling, the change in expansion kinetics observed after domains contact with the Plateau border has not been reported and analyzed before.

  7. Biodegradability and mechanical properties of starch films from Andean crops.

    Science.gov (United States)

    Torres, F G; Troncoso, O P; Torres, C; Díaz, D A; Amaya, E

    2011-05-01

    Different Andean crops were used to obtain starches not previously reported in literature as raw material for the production of biodegradable polymers. The twelve starches obtained were used to prepare biodegradable films by casting. Water and glycerol were used as plasticizers. The mechanical properties of the starch based films were assessed by means of tensile tests. Compost tests and FTIR tests were carried out to assess biodegradability of films. The results show that the mechanical properties (UTS, Young's modulus and elongation at break) of starch based films strongly depend on the starch source used for their production. We found that all the starch films prepared biodegrade following a three stage process and that the weight loss rate of all the starch based films tested was higher than the weight loss rate of the cellulose film used as control. Copyright © 2011 Elsevier B.V. All rights reserved.

  8. Growth and structure of Co/Au magnetic thin films

    International Nuclear Information System (INIS)

    Marsot, N.

    1999-01-01

    We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

  9. Nitrided FeB amorphous thin films for magneto mechanical systems

    International Nuclear Information System (INIS)

    Fernandez-Martinez, I.; Martin-Gonzalez, M.S.; Gonzalez-Arrabal, R.; Alvarez-Sanchez, R.; Briones, F.; Costa-Kraemer, J.L.

    2008-01-01

    The structural, magnetic and magnetoelastic properties of Fe-B-N amorphous films, sputtered from a Fe 80 B 20 target, in a mixture of argon and nitrogen gas, are studied for different nitrogen partial pressures. Nitrogen incorporates into the film preserving the amorphous structure, and modifying magnetic properties. The amount of nitrogen that incorporates into the amorphous structure is found to scale linearly with the nitrogen partial pressure during film growth. The structure, magnetization, field evolution, magnetic anisotropy and magnetostrictive behaviour are determined for films with different nitrogen content. An ∼20% increase of both the saturation magnetization and the magnetostriction constant values is found for moderate (∼8%) nitrogen content when compared to those for pure Fe 80 B 20 amorphous films. These improved properties, together with the still low coercivity of the amorphous films offer great potential for their use in magnetostrictive micro and nano magneto mechanical actuator devices

  10. Computer graphic investigation on the epitaxial growth of superconductor films

    International Nuclear Information System (INIS)

    Miyamoto, A.; Iwamoto, S.; Inui, T.; Agusa, K.

    1989-01-01

    A mechanism of the epitaxial growth the oxide superconductor films has been investigated by using the computer graphics for the combination of orthorhombic Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 MgO, and ZrO 2 . The (001) plane Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 , MgO, and ZrO 2 . The (001) plane of Ba 2 YCu 3 O 7-x has been shown to fit the (100) plane of SrTiO 3 , MgO, and ZrO 2 . A crystallographic fit has also been proved between the (110) plane of Ba 2 YCu 3 O 7-x and the (110) plane of SrTiO 3 . These results are consistent with the experimental data about the epitaxial growth of the Ba 2 YCu 3 O 7-x films. Furthermore, detailed investigation of atomic arrangements has indicated some differences in the ionic interaction at the superconductor-substrate interface among SrTiO 3 , MgO, and ZrO 2 substrates. As for ZrO 2 (100) plane, for examples, ionic arrangements at the oxide layer is favorable only for the interaction with Y 3+ layer of Ba 2 YCu 3 O 7-x , while the Zr-O layer of ZrO 2 can interact with both Ba-O layer and Cu-O layer of Ba 2 YCu 3 O 7-x

  11. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells.

    Science.gov (United States)

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-03-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young's modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain-subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service.

  12. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Claudia Hengst

    2017-03-01

    Full Text Available The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young’s modulus, and crack onset strain (COS were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO conductive coatings were prepared. Whereas a characteristic grain–subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells during fabrication in a roll-to-roll process or under service.

  13. Interface-Limited Spherulitic Growth of Hydroxyapatite/Chondroitin Sulfate Composite Enamel-like Films

    Science.gov (United States)

    Ma, Guobin; Xu, Yifei; Wang, Xiyan; Wang, Mu

    2012-02-01

    Understanding and mimicking the growth of hard tissues such as tooth enamel may lead to innovative approaches toward engineering novel functional materials and providing new therapeutics. Up to now, in vitro growth of enamel-like materials is still a great challenge, and the microscopic formation mechanisms are far from well understood. Here we report synthesis of large-scale hydroxyapatite (HAP) and chondroitin sulfate (ChS) composite films by an efficient solution-air interface growth method. The products have the characteristic hierarchical prism structures of enamel and the mechanical properties comparable to dentin. We demonstrate that the films are assembled by spherulites nucleated at the solution surface. The growth of the spherulites is limited by the interfaces between them as well as between the solution and air, leading to the ordered prism structure. The results are beneficial for a clearer understanding of the fundamentals of tooth enamel formation.

  14. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

    2017-01-01

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  15. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  16. Thin films growth parameters in MAPLE; application to fibrinogen

    International Nuclear Information System (INIS)

    Jelinek, M; Cristescu, R; Kocourek, T; Vorlicek, V; Remsa, J; Stamatin, L; Mihaiescu, D; Stamatin, I; Mihailescu, I N; Chrisey, D B

    2007-01-01

    Increasingly requirements on the thin film quality of functionalized materials are efficiently met by a novel laser processing technique - Matrix Assisted Pulsed Laser Evaporation (MAPLE). Examples of deposition conditions and main features characteristic to film growth rate of MAPLE-fabricated organic materials are summarized. MAPLE experimental results are compared with ones corresponding to the classical Pulsed Laser Deposition (PLD). In particular, the results of investigation of MAPLE-deposited fibrinogen blood protein thin films using a KrF* excimer laser and characterized by FTIR and Raman spectrometry are reported

  17. Mapping the transition from catalyst-pool to bamboo-like growth-mechanism in vertically-aligned free-standing films of carbon nanotubes filled with Fe3C: The key role of water

    Directory of Open Access Journals (Sweden)

    Filippo S. Boi

    2016-08-01

    Full Text Available The control of carbon nanotube growth has challenged researchers for more than a decade due to the complex parameters-control necessary in the commonly used CVD approaches. Here we show that a direct transition from the catalyst-pool growth mechanism characterized by graphene-caps in the direction of growth to a bamboo-shaped mechanism characterized by the repetition of periodic elongated graphitic compartments is present when controlled quantities of water are added to ferrocene/dichlorobenzene. Our results suggest that water-addition allows enhancing the level of stress accumulated under the graphitic nanotubes-cap.

  18. Mapping the transition from catalyst-pool to bamboo-like growth-mechanism in vertically-aligned free-standing films of carbon nanotubes filled with Fe3C: The key role of water

    Science.gov (United States)

    Boi, Filippo S.; Wang, Shanling; He, Yi

    2016-08-01

    The control of carbon nanotube growth has challenged researchers for more than a decade due to the complex parameters-control necessary in the commonly used CVD approaches. Here we show that a direct transition from the catalyst-pool growth mechanism characterized by graphene-caps in the direction of growth to a bamboo-shaped mechanism characterized by the repetition of periodic elongated graphitic compartments is present when controlled quantities of water are added to ferrocene/dichlorobenzene. Our results suggest that water-addition allows enhancing the level of stress accumulated under the graphitic nanotubes-cap.

  19. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. The mathematics and mechanics of biological growth

    CERN Document Server

    Goriely, Alain

    2017-01-01

    This monograph presents a general mechanical theory for biological growth. It provides both a conceptual and a technical foundation for the understanding and analysis of problems arising in biology and physiology. The theory and methods is illustrated on a wide range of examples and applications. A process of extreme complexity, growth plays a fundamental role in many biological processes and is considered to be the hallmark of life itself. Its description has been one of the fundamental problems of life sciences, but until recently, it has not attracted much attention from mathematicians, physicists, and engineers. The author herein presents the first major technical monograph on the problem of growth since D’Arcy Wentworth Thompson’s 1917 book On Growth and Form. The emphasis of the book is on the proper mathematical formulation of growth kinematics and mechanics. Accordingly, the discussion proceeds in order of complexity and the book is divided into five parts. First, a general introduction on the pro...

  1. Concepts on Low Temperature Mechanical Grain Growth

    Energy Technology Data Exchange (ETDEWEB)

    Sharon, John Anthony [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Metallurgy and Materials Joining Dept.; Boyce, Brad Lee [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Metallurgy and Materials Joining Dept.

    2013-11-01

    In metals, as grain size is reduced below 100nm, conventional dislocation plasticity is suppressed resulting in improvements in strength, hardness, and wears resistance. Existing and emerging components use fine grained metals for these beneficial attributes. However, these benefits can be lost in service if the grains undergo growth during the component’s lifespan. While grain growth is traditionally viewed as a purely thermal process that requires elevated temperature exposure, recent evidence shows that some metals, especially those with nanocrystalline grain structure, can undergo grain growth even at room temperature or below due to mechanical loading. This report has been assembled to survey the key concepts regarding how mechanical loads can drive grain coarsening at room temperature and below. Topics outlined include the atomic level mechanisms that facilitate grain growth, grain boundary mobility, and the impact of boundary structure, loading scheme, and temperature.

  2. Physical, mechanical and antimicrobial properties of starch films incorporated with ε-poly-L-lysine.

    Science.gov (United States)

    Zhang, Liming; Li, Ruichao; Dong, Feng; Tian, Aiying; Li, Zhengjun; Dai, Yujie

    2015-01-01

    Starch/ε-poly-L-lysine (ε-PL) composite films were prepared by combining 4% (w/v) gelatinized cornstarch and varying the level of ε-PL. The physical, mechanical and antimicrobial properties of these films were investigated. Fourier-transform infrared spectra (FT-IR) showed that the carbonyl group stretching vibration band of the ε-PL molecule shifted from 1646 cm(-1) to 1673 cm(-1) in the composite films. Differential scanning calorimetry (DSC) results indicated that there were sharp endothermal peaks at 215-230 °C for the composite films. These results indicated that there was an intense interaction between the two components. The films incorporated with ε-PL showed a higher tensile strength (TS) and elongation-at-break (E) than those of the starch film alone. These composite films exhibited effective inhibition against Escherichia coli and Bacillus subtilis, films containing 2% (w/w) ε-PL effectively suppressed the growth of the tested microbes (Pstarch/ε-PL films showed a low inhibitory effect on Aspergillus niger. This antimicrobial trend of the composite films was in agreement with the results of free ε-PL. Copyright © 2014 Elsevier Ltd. All rights reserved.

  3. Growth of nanocomposite films from accelerated C60 ions

    International Nuclear Information System (INIS)

    Pukha, V E; Zubarev, E N; Drozdov, A N; Pugachov, A T; Jeong, S H; Nam, S C

    2012-01-01

    A beam of accelerated C 60 ions is used to deposit superhard (∼50 GPa) carbon films that exhibit high index plasticity (∼0.13-0.14) and high conductivity (up to 3000 S m -1 ). Transmission electron microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy are subsequently used to study the microstructure and bond character of the deposited films. The films consist of textured graphite nanocrystals and diamond-like amorphous carbon (DLC). The graphene plane of the nanocrystals is aligned perpendicular to the film surface. It is shown that sp 2 bonds dominate in the films. The percentage of sp 3 bonds depends on the ion energy and the substrate temperature, and does not exceed 40%. The obtained results suggest that a new nanocomposite material consisting of oriented graphite nanocrystals reinforced by a DLC matrix is synthesized. A simple model is proposed to correlate the excellent mechanical properties with the observed structure. (paper)

  4. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  5. Optical properties of organic semiconductor thin films. Static spectra and real-time growth studies

    Energy Technology Data Exchange (ETDEWEB)

    Heinemeyer, Ute

    2009-07-20

    The aim of this work was to establish the anisotropic dielectric function of organic thin films on silicon covered with native oxide and to study their optical properties during film growth. While the work focuses mainly on the optical properties of Diindenoperylene (DIP) films, also the optical response of Pentacene (PEN) films during growth is studied for comparison. Spectroscopic ellipsometry and differential reflectance spectroscopy are used to determine the dielectric function of the films ex-situ and in-situ, i.e. in air and in ultrahigh vacuum. Additionally, Raman- and fluorescence spectroscopy is utilized to characterize the DIP films serving also as a basis for spatially resolved optical measurements beyond the diffraction limit. Furthermore, X-ray reflectometry and atomic force microscopy are used to determine important structural and morphological film properties. The absorption spectrum of DIP in solution serves as a monomer reference. The observed vibronic progression of the HOMO-LUMO transition allows the determination of the Huang-Rhys parameter experimentally, which is a measure of the electronic vibrational coupling. The corresponding breathing modes are measured by Raman spectroscopy. The optical properties of DIP films on native oxide show significant differences compared to the monomer spectrum due to intermolecular interactions. First of all, the thin film spectra are highly anisotropic due to the structural order of the films. Furthermore the Frenkel exciton transfer is studied and the energy difference between Frenkel and charge transfer excitons is determined. Real-time measurements reveal optical differences between interfacial or surface molecules and bulk molecules that play an important role for device applications. They are not only performed for DIP films but also for PEN films. While for DIP films on glass the appearance of a new mode is visible, the spectra of PEN show a pronounced energy red-shift during growth. It is shown how the

  6. Monolithic growth of partly cured polydimethylsiloxane thin film layers

    DEFF Research Database (Denmark)

    Yu, Liyun; Skov, Anne Ladegaard

    2014-01-01

    at different curing times. The monolithic films are investigated by rheology, scanning electron microscope, mechanical testing, dielectric relaxation spectroscopy, thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC). The morphology, mechanical and dielectric properties, as well...... to enable interlayer crosslinking reactions either by application of an adhesion promoter or by ensuring that there are reactive, complementary sites available on the two surfaces. Polydimethylsiloxane (PDMS) is a widely used polymer for DEAPs. In this work, two-layered PDMS films are adhered together...... as thermal stabilities of the bilayer elastomer films are observed to change with the curing time of the monolayers before lamination. The objective of this work is to create adhesion of two layers without destroying the original viscoelastic properties of the PDMS films, and hence enable, for example...

  7. Phosphorus introduction mechanism in electrodeposited cobalt films

    International Nuclear Information System (INIS)

    Kravtchenko, Jean-Francois

    1973-01-01

    The cathodic reduction of hypophosphite, phosphite and phosphate ions was studied using chrono-potentiometry and voltammetry. Then cobalt was deposited at constant current from a bath containing one of these three compounds. The current, while giving an electrodeposition of cobalt, also enhances at the same time a chemical deposition of cobalt. It is shown that high coercive forces in cobalt films are much more related to this chemical deposition than to the simple fact that the films contain some phosphorus. (author) [fr

  8. Diffusion and crystal growth in plasma deposed thin ITO films

    International Nuclear Information System (INIS)

    Steffen, H.; Wulff, H.; Quaas, M.; Tun, Tin Maung.; Hipple, R.

    2000-01-01

    Tin-doped indium oxide (ITO) films were deposited by means of DC-planar magnetron sputtering. A metallic In/Sn (90/10) target an Ar/O 2 gas mixture were used. The oxygen flow was varied between 0 and 2 sccm. Substrate voltages between 0 and -100 V were used. With increasing oxygen flow film structure and composition change from crystalline metallic In/Sn to amorphous ITO. Simultaneously the deposition rate decreases and the film density increases. The diffusion of oxygen into metallic In/Sn films and the amorphous-to-crystalline transformation of ITO were studied using in situ grazing incidence X-ray diffractometry (GIXRD), grazing incidence reflectometry (GIXR), and AFM. From the X-ray integral intensities diffusion constants, activation energies of the diffusion, reaction order and activation energy of the crystal growth were extracted. (authors)

  9. Antifungal, Mechanical, and Physical Properties of Edible Film Containing Williopsis saturnus var. saturnus Antagonistic Yeast.

    Science.gov (United States)

    Karabulut, Gulsah; Cagri-Mehmetoglu, Arzu

    2018-03-01

    The molding of food products causing health risks is a main problem in the food industry. In this study, as an alternative solution for preventing mold growth, an antifungal edible film was developed by incorporating Williopsis saturnus var. saturnus (0; 3; 7; and 9 logs CFU/cm 2 ) into whey protein concentrate (WPC) based films. Antifungal properties of the films against Penicilium expansum and Aspergillus niger were analyzed using the disc diffusion method. Physical (barrier, solubility, color), mechanical (tensile strength and percent elongation) properties of the films as well as the survival of W. saturnus in the film were assessed during 28 days of storage at 23 °C. According to the results, the viability of W. saturnus (7 and 9 logs CFU/cm 2 ) in WPC films stored for 28 days under vacuum or non-vacuum decreased to 36% and 60%, respectively. In addition, films containing W. saturnus decreased the viability of P. expansum and A. niger by 29% and 19%, respectively. Adding yeast did not change the tensile strength (P > 0.05), but significantly decreased % elongation and increased water vapor and oxygen permeability and water solubility (P films may be useful for inhibiting mold growth on foods. © 2018 Institute of Food Technologists®.

  10. Crystallinity and mechanical effects from annealing Parylene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Nathan, E-mail: Nathan.Jackson@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland); Stam, Frank; O' Brien, Joe [Tyndall National Institute, University College Cork, Cork (Ireland); Kailas, Lekshmi [University of Limerick, Limerick (Ireland); Mathewson, Alan; O' Murchu, Cian [Tyndall National Institute, University College Cork, Cork (Ireland)

    2016-03-31

    Parylene is commonly used as thin film polymer for MEMS devices and smart materials. This paper investigates the impact on bulk properties due to annealing various types of Parylene films. A thin film of Parylene N, C and a hybrid material consisting of Parylene N and C were deposited using a standard Gorham process. The thin film samples were annealed at varying temperatures from room temperature up to 300 °C. The films were analyzed to determine the mechanical and crystallinity effects due to different annealing temperatures. The results demonstrate that the percentage of crystallinity and the full-width-half-maximum value on the 2θ X-ray diffraction scan increases as the annealing temperature increases until the melting temperature of the Parylene films was achieved. Highly crystalline films of 85% and 92% crystallinity were achieved for Parylene C and N respectively. Investigation of the hybrid film showed that the individual Parylene films behave independently to each other, and the crystallinity of one film had no significant impact to the other film. Mechanical testing showed that the elastic modulus and yield strength increase as a function of annealing, whereas the elongation-to-break parameter decreases. The change in elastic modulus was more significant for Parylene C than Parylene N and this is attributed to the larger change in crystallinity that was observed. Parylene C had a 112% increase in crystallinity compared to a 61% increase for Parylene N, because the original Parylene N material was more crystalline than Parylene C so the change of crystallinity was greater for Parylene C. - Highlights: • A hybrid material consisting of Parylene N and C was developed. • Parylene N has greater crystallinity than Parylene C. • Phase transition of Parylene N due to annealing results in increased crystallinity. • Annealing caused increased crystallinity and elastic modulus in Parylene films. • Annealed hybrid Parylene films crystallinity behave

  11. Incorporation mechanism for doping of metal ions into a passivating film at the lithium/thionyl chloride interface

    Science.gov (United States)

    Danilov, V. G.; Shikin, V. I.

    1993-05-01

    Effects of iron and titanium ions on corrosion processes of lithium in thionyl chloride electrolytes have been studied. Laws for the growth of the passivating film on the type and concentration of doped ions have been established, and equations for these are suggested. A stepwise mechanism of dopant incorporation into passivating film structure is presented.

  12. Incorporation mechanism for doping of metal ions into a passive film at the lithium/thionyl chloride interface

    Energy Technology Data Exchange (ETDEWEB)

    Danilov, V.G. (Siberian Inst. of Tech., Krasnoyarsk (Russian Federation). Lab. of Electrochemistry); Shilkin, V.I. (Siberian Inst. of Tech., Krasnoyarsk (Russian Federation). Lab. of Electrochemistry)

    1993-05-01

    Effects of iron and titanium ions on corrosion processes of lithium in thionyl chloride electrolytes have been studied. Laws for the growth of the passivating film on the type and concentration of doped ions have been established, and equations for these are suggested. A stepwise mechanism of dopant incorporation into passivating film structure is presented. (orig.)

  13. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  14. Optimizing growth conditions for electroless deposition of Au films ...

    Indian Academy of Sciences (India)

    Unknown

    Optimizing growth conditions for electroless deposition of Au films on. Si(111) substrates. BHUVANA and G U KULKARNI*. Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for. Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India. MS received 24 March 2006.

  15. Microtribological Mechanisms of Tungsten and Aluminum Nitride Films

    Science.gov (United States)

    Zhao, Hongjian; Mu, Chunyan; Ye, Fuxing

    2016-04-01

    Microtribology experiments were carried out on the W1- x Al x N films, deposited by radio frequency magnetron reactive sputtering on 304 stainless steel substrates and Si(100). Film wear mechanisms were investigated from the evolution of the friction coefficient and scanning electron microscopy observations. The results show that the WAlN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases and the preferred orientation changes from (111) to (200). The film damage after sliding test is mainly attributed to the composition and microstructure of the films. The amount of debris generated by friction is linked to the crack resistance. The better tribological properties for W1- x Al x N films ( x < 0.4) are mainly determined by the higher toughness.

  16. Mechanics of quasi-static crack growth

    Energy Technology Data Exchange (ETDEWEB)

    Rice, J R

    1978-10-01

    Results on the mechanics of quasi-static crack growth are reviewed. These include recent studies on the geometry and stability of crack paths in elastic-brittle solids, and on the thermodynamics of Griffith cracking, including environmental effects. The relation of crack growth criteria to non-elastic rheological models is considered and paradoxes with energy balance approaches, based on singular crack models, are discussed for visco-elastic, diffuso-elastic, and elastic-plastic materials. Also, recent approaches to prediction of stable crack growth in ductile, elastic-plastic solids are discussed.

  17. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    Energy Technology Data Exchange (ETDEWEB)

    Koehl, Dominik

    2011-02-17

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  18. The influence of energetic bombardment on the structure formation of sputtered zinc oxide films. Development of an atomistic growth model and its application to tailor thin film properties

    International Nuclear Information System (INIS)

    Koehl, Dominik

    2011-01-01

    The focus of this work is the investigation of the growth of zinc oxide (ZnO) thin films. It is demonstrated that with a modified, ion beam assisted sputtering (IBAS) process, zinc oxide films can be deposited which exhibit a markedly improved crystalline order. Furthermore, it is demonstrated that intense energetic oxygen ion bombardment can be utilized to change film texture from the typical (002)-self-texture to an a-axis texture where the (002)-planes are perpendicular to the substrate surface. An understanding of the underlying mechanisms is developed which also facilitates a more detailed understanding of the action of ion bombardment during zinc oxide film growth. It is shown that zinc oxide films are susceptible to the influence of ion bombardment particularly in the nucleation regime of growth and that this finding is generally true for all observed structural changes induced by ion bombardment with various species, energies and flux densities. It is demonstrated not only that the initial growth stage plays an important role in the formation of a preferred growth orientation but also that the action of texture forming mechanisms in subsequent growth stages is comparatively weak. (orig.)

  19. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  20. Growth of Ag thin films on ZnO(0 0 0 -1) investigated by AES and STM

    Energy Technology Data Exchange (ETDEWEB)

    Duriau, E. [Interuniversity Microelectronic Center (IMEC), SPDT-MCA, Kapeldreef 75, B-3001 Leuven (Belgium); Agouram, S. [Dpto. Fisica Aplicada y Electromagnetismo c/Dr. Moliner no. 50, 46100 Burjassot, Valencia (Spain); Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Morhain, C. [Centre de Recherche sur l' HeteroEpitaxie et ses Applications (CRHEA), CNRS, Rue Bernard Gregory, F-06560 Valbonne Sophia-Antipolis (France); Seldrum, T. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Sporken, R. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Dumont, J. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium)]. E-mail: jacques.dumont@fundp.ac.be

    2006-11-15

    The growth of Ag films on ZnO(0 0 0 -1) has been investigated by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM). A high density of islands is nucleated at the earliest stages of the growth. An upstepping mechanism causes these islands to coalesce while the uncovered fraction of the ZnO surface remains constant (30%)

  1. Mechanisms of radiation induced creep and growth

    International Nuclear Information System (INIS)

    Bullough, R.; Wood, M.H.

    1980-01-01

    Irradiation creep occurs primarily because the applied stress causes the evolving microstructure to respond in an anisotropic fashion to the interstitial and vacancy fluxes. On the other hand, irradiation growth requires the response to be naturally anisotropic in the absence of applied stress. Four fundamental mechanisms of irradiation creep have been conjectured: stress induced preferred absorption (SIPA) of the point defects on the dislocations, stress induced preferred nucleation (SIPN) of point defects in planar aggregates (edge dislocation loops), stress induced climb and glide (SICG) of the dislocation network and stress induced gas driven interstitial deposition (SIGD). These mechanisms will be briefly outlined and commented upon. The contributions made by these mechanisms to the total strain are not, in general, mutually separable and also depend on the prevailing (and changing) microstructure during irradiation. The fundamental mechanism of irradiation growth will be discussed: it is believed to arise by the preferred condensation of point defects and climb of dislocation loops and network on certain crystallographic planes. The preferred absorption and nucleation is thus a consequence of natural crystallographic anisotropy and not due to any external stresses. Again the effectiveness of this mechanism depends on the prevailing microstructure in the material. In this connection will be particularly drawn to the significance of solute trapping, segregation at grain boundaries, dislocation bias for interstitials and transport parameters for an understanding of irradiation growth in materials like zirconium and its alloys; the relevance of recent simulation studies of growth in such materials using electrons to the growth under neutron irradiation will be discussed in detail and a consistent model of growth in these materials will be presented. (orig.)

  2. Magnesium growth in magnesium deuteride thin films during deuterium desorption

    Energy Technology Data Exchange (ETDEWEB)

    Checchetto, R., E-mail: riccardo.checchetto@unitn.it [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Miotello, A. [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Mengucci, P.; Barucca, G. [Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, Università Politecnica delle Marche, I-60131 Ancona (Italy)

    2013-12-15

    Highlights: ► Highly oriented Pd-capped magnesium deuteride thin films. ► The MgD{sub 2} dissociation was studied at temperatures not exceeding 100 °C. ► The structure of the film samples was analyzed by XRD and TEM. ► The transformation is controlled by the re-growth velocity of the Mg layers. ► The transformation is thermally activated, activation energy value of 1.3 ± 0.1 eV. -- Abstract: Pd- capped nanocrystalline magnesium thin films having columnar structure were deposited on Si substrate by e-gun deposition and submitted to thermal annealing in D{sub 2} atmosphere to promote the metal to deuteride phase transformation. The kinetics of the reverse deuteride to metal transformation was studied by Thermal Desorption Spectroscopy (TDS) while the structure of the as deposited and transformed samples was analyzed by X-rays diffraction and Transmission Electron Microscopy (TEM). In Pd- capped MgD{sub 2} thin films the deuteride to metal transformation begins at the interface between un-reacted Mg and transformed MgD{sub 2} layers. The D{sub 2} desorption kinetics is controlled by MgD{sub 2}/Mg interface effects, specifically the re-growth velocity of the Mg layers. The Mg re-growth has thermally activated character and shows an activation energy value of 1.3 ± 0.1 eV.

  3. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  4. Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

    International Nuclear Information System (INIS)

    Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

    2008-01-01

    Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

  5. Effect of Nano-Ni Catalyst on the Growth and Characterization of Diamond Films by HFCVD

    Directory of Open Access Journals (Sweden)

    Chien-Chung Teng

    2010-01-01

    Full Text Available Four different catalysts, nanodiamond seed, nano-Ni, diamond powder, and mixture of nano-Ni/diamond powder, were used to activate Si wafers for diamond film growth by hot-filament CVD (HFCVD. Diamond crystals were shown to grow directly on both large diamond powder and small nanodiamond seed, but a better crystallinity of diamond film was observed on the ultrasonicated nanodiamond seeded Si substrate. On the other hand, nano-Ni nanocatalysts seem to promote the formation of amorphous carbon but suppress transpolyacetylene (t-PA phases at the initial growth of diamond films. The subsequent nucleation and growth of diamond crystals on the amorphous carbon layer leads to generation of the spherical diamond particles and clusters prior to coalescence into continuous diamond films based on the CH3 addition mechanism as characterized by XRD, Raman, ATR/FT-IR, XPS, TEM, SEM, and AFM techniques. Moreover, a 36% reduction in surface roughness of diamond film assisted by nano-Ni catalyst is quite significant.

  6. Conciliating surface superhydrophobicities and mechanical strength of porous silicon films

    Science.gov (United States)

    Wang, Fuguo; Zhao, Kun; Cheng, Jinchun; Zhang, Junyan

    2011-01-01

    Hydrophobic surfaces on Mechanical stable macroporous silicon films were prepared by electrochemical etching with subsequent octadecyltrichlorosilane (OTS) modification. The surface morphologies were controlled by current densities and the mechanical properties were adjusted by their corresponding porosities. Contrast with the smooth macroporous silicon films with lower porosities (34.1%) and microporous silicon with higher porosities (97%), the macroporous film with a rough three-dimension (3D) surface and a moderate pore to cross-section area ratio (37.8%, PSi2‧) exhibited both good mechanical strength (Yong' modulus, shear modulus and collapse strength are 64.2, 24.1 and 0.32 GPa, respectively) and surface superhydrophobicity (water contact angle is 158.4 ± 2° and sliding angle is 2.7 ± 1°). This result revealed that the surface hydrophobicities (or the surface roughness) and mechanical strength of porous films could be conciliated by pore to cross-section area ratios control and 3D structures construction. Thus, the superhydrophobic surfaces on mechanical stable porous films could be obtained by 3D structures fabrication on porous film with proper pore to cross-section area ratios.

  7. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakanth, Katturi Naga; Sunandana, C. S. [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Rajesh, Desapogu, E-mail: rajesh.esapogu@gmail.com, E-mail: mperd@nus.edu.sg [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Dept. of Mechanical Engineering, National University of Singapore (Singapore)

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  8. Electro-active bio-films: formation, characterization and mechanisms

    International Nuclear Information System (INIS)

    Parot, Sandrine

    2007-01-01

    Some bacteria, which are able to exchange electrons with a conductive material without mediator form on conductive surfaces electro-active bio-films. This bacterial property has been recently discovered (2001). Objectives of this work are to develop electro-active bio-films in various natural environments from indigenous flora, then through complementary electrochemical techniques (chrono-amperometry and cyclic voltammetry), to evaluate electro-activity of isolates coming from so-formed bio-films and to characterize mechanisms of electron transfer between bacteria and materials. First, electro-active bio-films have been developed under chrono-amperometry in garden compost and in water coming from Guyana mangrove. These bio-films were respectively able to use an electrode as electron acceptor (oxidation) or as electron donor (reduction). In compost, results obtained in chrono-amperometry and cyclic voltammetry suggest a two-step electron transfer: slow substrate consumption, then rapid electron transfer between bacteria and the electrode. Thereafter, the ability to reduce oxygen was demonstrated with cyclic voltammetry for facultative aerobic isolates from compost bio-films (Enterobacter spp. and Pseudomonas spp.) and for aerobic isolates obtained from marine electro-active bio-films (Roseobacter spp. in majority). Finally, bio-films inducing current increase in chrono-amperometry were developed in bioreactor with synthetic medium from a pure culture of isolates. Hence, for the first time, electro-activity of several anaerobic strains of Geobacter bremensis isolated from compost bio-films was highlighted. (author) [fr

  9. Diamond film growth with modification properties of adhesion between substrate and diamond film

    Directory of Open Access Journals (Sweden)

    Setasuwon P.

    2004-03-01

    Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

  10. Scalable Production of Mechanically Robust Antireflection Film for Omnidirectional Enhanced Flexible Thin Film Solar Cells.

    Science.gov (United States)

    Wang, Min; Ma, Pengsha; Yin, Min; Lu, Linfeng; Lin, Yinyue; Chen, Xiaoyuan; Jia, Wei; Cao, Xinmin; Chang, Paichun; Li, Dongdong

    2017-09-01

    Antireflection (AR) at the interface between the air and incident window material is paramount to boost the performance of photovoltaic devices. 3D nanostructures have attracted tremendous interest to reduce reflection, while the structure is vulnerable to the harsh outdoor environment. Thus the AR film with improved mechanical property is desirable in an industrial application. Herein, a scalable production of flexible AR films is proposed with microsized structures by roll-to-roll imprinting process, which possesses hydrophobic property and much improved robustness. The AR films can be potentially used for a wide range of photovoltaic devices whether based on rigid or flexible substrates. As a demonstration, the AR films are integrated with commercial Si-based triple-junction thin film solar cells. The AR film works as an effective tool to control the light travel path and utilize the light inward more efficiently by exciting hybrid optical modes, which results in a broadband and omnidirectional enhanced performance.

  11. Laterally enhanced growth of electrodeposited Au to form ultrathin films on nonconductive surfaces

    International Nuclear Information System (INIS)

    Kobayashi, Chiaki; Saito, Mikiko; Homma, Takayuki

    2012-01-01

    We investigated the laterally enhanced growth of electrodeposited Au for fabricating nanogap electrodes. To enhance the lateral growth, we carried out electrodeposition over patterned electrodes onto a SiO 2 surface modified with self-assembled monolayers (SAMs) or dendrimers with amine groups. The morphology and thickness of the Au films were controlled by adjusting deposition conditions such as duration, applied potential, and Au ion concentration in the bath. To investigate the mechanism of the laterally enhanced growth, the surface states of SAM- or dendrimer-modified SiO 2 were analyzed by X-ray photoelectron spectroscopy (XPS). The XPS results indicate the existence of organic molecules and Au ions on the SiO 2 surface, which suggests that laterally enhanced growth is induced by the Au ions coordinated on the amine groups of the organic molecules. To further analyze the mechanism of the laterally enhanced growth, we investigated the relationship between the morphology of the laterally enhanced growth of Au and the amount of Au ions on organic molecules. The laterally enhanced growth of Au is expected to be useful for fabricating thin film nanogap electrodes.

  12. Mechanism of constitution liquid film migration

    Energy Technology Data Exchange (ETDEWEB)

    Zuo, Hongjun [Univ. of Alabama, Birmingham, AL (United States)

    1999-06-01

    Liquid film migration (LFM) in liquid phase sintering classically involves a large metastable liquid volume adjacent to solid, and migration occurs at an isolated solid-liquid (S-L) interface. Constitutional liquid film migration (CLFM), discovered in alloy 718, has major characteristics similar to those of LFM, except that the metastable liquid is from the constitutional liquation of precipitates on the grain boundary. The similarity between LFM and CLFM has led to the theory that coherency lattice strain responsible for LFM is also responsible for CLFM. The coherency strain hypothesis was tested in this study by evaluating whether the Hillert model of LFM would also apply for CLFM. Experimental results of CLFM in alloy 718 showed that migration velocity followed the trend predicted by the Hillert model. This indicates that the coherency strain hypothesis of LFM also applies for CLFM and that the coherency lattice strain responsible for LFM is also the driving force for CLFM.

  13. Solution growth, characterization and applications of zinc sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ndukwe, I C [School of Physical Sciences, Abia State University, Uturu, Abia State (Nigeria)

    1996-04-29

    Zinc sulphide (ZnS) thin films were successfully deposited on glass substrates under varying deposition conditions using the electroless or solution growth technique. The film properties investigated include their transmittance/reflectance/absorbance spectra, bandgap, optical constants, and thicknesses. Films grown under certain parametric conditions were found to exhibit high transmittance (64-98%), low absorbance, and low reflectance in the ultraviolet (uv)/visible/near infrared (nir) regions up to 1.00 {mu}m. Those obtained under other conditions exhibited high transmittance (78-98%) and low absorbance (0.01-0.1) in the uv/visible regions but low transmittance (30-37) and high absorbance (0.56) in the nir region. These characteristics revealed their suitability for various solar device applications. Bandgap range E{sub g}=3.7-3.8 eV and thickness range t=0.07 - 0.73 {mu}m were obtained.

  14. Effect of enhanced C2 growth chemistry on nanodiamond film deposition

    International Nuclear Information System (INIS)

    Teii, Kungen; Ikeda, Tomohiro

    2007-01-01

    A route to high-purity nanocrystalline diamond films from C 2 dimers and related mechanisms have been investigated by enhancing C 2 growth chemistry in Ar-rich microwave plasmas. Efficient C 2 production by direct dissociation from acetylene causes the micro- to nanocrystal transition with a low threshold Ar concentration of ∼70% and produces films of ∼20 nm grains with a distinct visible-Raman peak of diamond. C 2 grows nanodiamond on diamond surfaces but rarely initiates nucleation on foreign surfaces. The phase purity can be improved by increasing the dominance of nanodiamond growth from C 2 over nondiamond growth from CH x (x=0-3) and large radicals

  15. Surface scattering mechanisms of tantalum nitride thin film resistor.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2014-01-01

    In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

  16. Elucidation of the electrochromic mechanism of nanostructured iron oxides films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

    2011-02-15

    Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

  17. Mechanical Adaptability of the MMP-Responsive Film Improves the Functionality of Endothelial Cell Monolayer.

    Science.gov (United States)

    Hu, Mi; Chang, Hao; Zhang, He; Wang, Jing; Lei, Wen-Xi; Li, Bo-Chao; Ren, Ke-Feng; Ji, Jian

    2017-07-01

    Extracellular matrix and cells are inherent in coordinating and adapting to each other during all physiological and pathological processes. Synthetic materials, however, show rarely reciprocal and spatiotemporal responses to cells, and lacking self-adapting properties as well. Here, a mechanical adaptability based on the matrix metalloproteinase (MMPs) sensitive polyelectrolyte film is reported. Poly-lysine (PLL) and methacrylated hyaluronic acid (HA-MA) nanolayers are employed to build the thin film through the layer-by-layer assembly, and it is further crosslinked using MMP sensitive peptides, which endows the films with changeable mechanical properties in response to MMPs. It is demonstrated that stiffness of the (PLL/HA-MA) films increases with the crosslinking, and then decreases in response to a treatment of enzyme. Consequently, the crosslinked (PLL/HA-MA) films reveal effective growth of endothelial cells (ECs), leading to fast formation of EC monolayer. Importantly, significantly improved endothelial function of the EC monolayer, which is characterized by integrity, biomolecules release, expression of function related gene, and antithrombotic properties, is achieved along with the decrosslinking of the film because of EC-secreted MMPs. These results suggest that mechanical adaptability of substrate in Young's modulus plays a significant role in endothelial progression, which shows great application potential in tissue engineering, regenerative medicine, and organ-on-a-chip. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Grain Growth in Nanocrystalline Mg-Al Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kruska, Karen; Rohatgi, Aashish; Vemuri, Venkata Rama Ses; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.

    2017-10-05

    An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

  19. Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

    International Nuclear Information System (INIS)

    Wang Qimin; Kim, Kwang Ho

    2008-01-01

    Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N 2 /Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N 2 and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics

  20. Physical-mechanical and electrical properties of aluminium anodic films

    Energy Technology Data Exchange (ETDEWEB)

    Dima, L. [Research and Design Inst. for Electr. Eng., Bucharest (Romania); Anicai, L. [Research and Design Inst. for Electr. Eng., Bucharest (Romania)

    1995-11-01

    Mechanical, thermal and electrical properties of aluminium anodic films obtained by continuously anodization of Al wires of 4.5 mm diameter and Al sheets of 40 x 0.2 mm (Al min.99.5% purity), using an electrolyte based on oxalic acid, citric acid, boric acid, isopropilic alcohol, were investigated. The thickness of Al anodic oxide layers was 5 {+-} 1{mu}, 10 {+-} 1{mu}, for Al sheet, respectively 5 {+-} 1{mu}, 10 {+-} 1{mu}, 15 {+-} 1{mu}, for Al wire. To establish the influence of anodic film formation on mechanical parameters, measurements of breaking strength and relative elongation at break for anodized and non-anodized Al conductors, were made. In order to electrically characterize the anodic films, the breakdown voltage for different curvature radii of the conductor, between 50 - 12.5 mm, were measured. The influence of the layer thickness, as well as of the cracking during its bending, was established, too. To test the thermal resistance of the insulating anodic films, the Al conductors were subjected to 1 - 5 cyclic thermal shocks at 500 C. After the experimentals were done, it was found that Al anodic films of 5 {+-} 1{mu} may assure a breakdown voltage of minimum 200 V, for coils having a curvature radius greater than 12.5 mm and operating temperatures up to 500 C. From mechanical point of view, anodic oxide film determines a relatively reinforcing of Al conductor, but it doesn`t influence its functional properties. (orig.)

  1. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

    International Nuclear Information System (INIS)

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

    2013-01-01

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

  2. Models of WO x films growth during pulsed laser deposition at elevated pressures of reactive gas

    Science.gov (United States)

    Gnedovets, A. G.; Fominski, V. Y.; Nevolin, V. N.; Romanov, R. I.; Fominski, D. V.; Soloviev, A. A.

    2017-12-01

    The films of tungsten oxides were prepared by pulsed laser ablation of W target in a reactive gas atmosphere (air of laboratory humidity). Optical analysis and ion signal measurements for the laser plume allowed to recognise a threshold gas pressure that suppresses the deposition of non-scattered atomic flux from the plume. When the pressure exceeds about 40 Pa, the films grow due to the deposition of species that could be formed in collisions of W atoms with reactive molecules (e.g., O2). Kinetic Monte Carlo method was used for modelling film growth. Comparison of the model structures with the experimentally prepared films has shown that the growth mechanism of ballistic deposition at a pressure of 40 Pa could be changed on the diffusion limited aggregation at a pressure of ~100 Pa. Thus, a cauliflower structure of the film transformed to a web-like structure. For good correlation of experimental and model structures of WO x , a dimension of structural elements in the model should coincide with W-O cluster size.

  3. Stress relaxation and hillock growth in thin films

    International Nuclear Information System (INIS)

    Jackson, M.S.; Li, C.Y.

    1978-01-01

    The relaxation of thermal stress in a thin film adhering to a substrate of differing expansion coefficient is discussed. Good agreement is found between literature data on relaxation during isothermal anneals of Pb films at up to 350 0 K and model calculations based on a state variable description of plastic flow. The stress system during relaxation is explored, and the absence of diffusional creep is explained. The plasticity-dominated relaxation process suggested by this analysis is shown to be in good qualitative agreement with data on rapid relaxation over the course of a cycle between room and cryogenic temperatures. The implications of this for long-range material transport in the film are discussed. It is shown that hillock volume should increase over the course of a temperature cycle. Finally, a mechanism for hillock nucleation based on grain boundary sliding is suggested

  4. A study of the chemical, mechanical, and surface properties of thin films of hydrogenated amorphous carbon

    Energy Technology Data Exchange (ETDEWEB)

    Vandentop, G.J.

    1990-07-01

    Amorphous hydrogenated carbon (a-C:H) films were studied with the objective of elucidating the nucleation and growth mechanisms, and the origin of their unique physical properties. The films were deposited onto Si(100) substrates both on the powered (negatively self-biased) and on the grounded electrodes from methane in an rf plasma (13.56 MHz) at 65 mTorr and 300 to 370 K. The films produced at the powered electrode exhibited superior mechanical properties, such as high hardness. A mass spectrometer was used to identify neutral species and positive ions incident on the electrodes from the plasma, and also to measure ion energies. The effect of varying ion energy flux on the properties of a-C:H films was investigated using a novel pulsed biasing technique. It was demonstrated that ions were not the dominant deposition species as the total ion flux measured was insufficient to account for the observed deposition rate. The interface between thin films of a-C:H and silicon substrates was investigated using angle resolved x-ray photoelectron spectroscopy. A silicon carbide layer was detected at the interface of a hard a-C:H film formed at the powered electrode. At the grounded electrode, where the kinetic energy is low, no interfacial carbide layer was observed. Scanning tunneling microscopy and high energy electron energy loss spectroscopy was used to investigate the initial stages of growth of a-C:H films. On graphite substrates, films formed at the powered electrode were observed to nucleate in clusters approximately 50 {Angstrom} in diameter, while at the grounded electrode no cluster formation was observed. 58 figs.

  5. Mechanics of fragmentation of crocodile skin and other thin films

    Science.gov (United States)

    Qin, Zhao; Pugno, Nicola M.; Buehler, Markus J.

    2014-05-01

    Fragmentation of thin layers of materials is mediated by a network of cracks on its surface. It is commonly seen in dehydrated paintings or asphalt pavements and even in graphene or other two-dimensional materials, but is also observed in the characteristic polygonal pattern on a crocodile's head. Here, we build a simple mechanical model of a thin film and investigate the generation and development of fragmentation patterns as the material is exposed to various modes of deformation. We find that the characteristic size of fragmentation, defined by the mean diameter of polygons, is strictly governed by mechanical properties of the film material. Our result demonstrates that skin fragmentation on the head of crocodiles is dominated by that it features a small ratio between the fracture energy and Young's modulus, and the patterns agree well with experimental observations. Understanding this mechanics-driven process could be applied to improve the lifetime and reliability of thin film coatings by mimicking crocodile skin.

  6. Low hydrogen containing amorphous carbon films - Growth and electrochemical properties as lithium battery anodes

    Energy Technology Data Exchange (ETDEWEB)

    Subramanian, V.; Masarapu, Charan; Wei, Bingqing [Department of Mechanical Engineering, University of Delaware, 130 Academy Street, Newark, DE 19716 (United States); Karabacak, Tansel [Department of Applied Science, University of Arkansas at Little Rock, 2801 South University Avenue, Little Rock, AR 72204 (United States); Teki, Ranganath [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)

    2010-04-02

    Amorphous carbon films were deposited successfully on Cu foils by DC magnetron sputtering technique. Electrochemical performance of the film as lithium battery anode was evaluated across Li metal at 0.2 C rate in a non-aqueous electrolyte. The discharge curves showed unusually low irreversible capacity in the first cycle with a reversible capacity of {proportional_to}810 mAh g{sup -1}, which is at least 2 times higher than that of graphitic carbon. For the first time we report here an amorphous carbon showing such a high reversibility in the first cycle, which is very much limited to the graphitic carbon. The deposited films were extensively characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and step profilometer for the structural and surface properties. The hydrogen content of the synthesized films was studied using residual gas analysis (RGA). The low hydrogen content and the low specific surface area of the synthesized amorphous carbon film are considered responsible for such a high first cycle columbic efficiency. The growth mechanism and the reasons for enhanced electrochemical performance of the carbon films are discussed. (author)

  7. Low hydrogen containing amorphous carbon films-Growth and electrochemical properties as lithium battery anodes

    Science.gov (United States)

    Subramanian, V.; Karabacak, Tansel; Masarapu, Charan; Teki, Ranganath; Lu, Toh-Ming; Wei, Bingqing

    Amorphous carbon films were deposited successfully on Cu foils by DC magnetron sputtering technique. Electrochemical performance of the film as lithium battery anode was evaluated across Li metal at 0.2 C rate in a non-aqueous electrolyte. The discharge curves showed unusually low irreversible capacity in the first cycle with a reversible capacity of ∼810 mAh g -1, which is at least 2 times higher than that of graphitic carbon. For the first time we report here an amorphous carbon showing such a high reversibility in the first cycle, which is very much limited to the graphitic carbon. The deposited films were extensively characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and step profilometer for the structural and surface properties. The hydrogen content of the synthesized films was studied using residual gas analysis (RGA). The low hydrogen content and the low specific surface area of the synthesized amorphous carbon film are considered responsible for such a high first cycle columbic efficiency. The growth mechanism and the reasons for enhanced electrochemical performance of the carbon films are discussed.

  8. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  9. Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

    International Nuclear Information System (INIS)

    Liu Aiping; Zhu Jiaqi; Han Jiecai; Wu Huaping; Jia Zechun

    2007-01-01

    We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH 3 as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about -80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH 3 is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp 2 sites dispersed in sp 3 skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films

  10. Numerical Simulation of Vapor Bubble Growth and Heat Transfer in a Thin Liquid Film

    International Nuclear Information System (INIS)

    Yu-Jia, Tao; Xiu-Lan, Huai; Zhi-Gang, Li

    2009-01-01

    A mathematical model is developed to investigate the dynamics of vapor bubble growth in a thin liquid film, movement of the interface between two fluids and the surface heat transfer characteristics. The model takes into account the effects of phase change between the vapor and liquid, gravity, surface tension and viscosity. The details of the multiphase now and heat transfer are discussed for two cases: (1) when a water micro-droplet impacts a thin liquid film with a vapor bubble growing and (2) when the vapor bubble grows and merges with the vapor layer above the liquid film without the droplet impacting. The development trend of the interface between the vapor and liquid is coincident qualitatively with the available literature, mostly at the first stage. We also provide an important method to better understand the mechanism of nucleate spray cooling. (fundamental areas of phenomenology (including applications))

  11. Mechanical growth and morphogenesis of seashells

    KAUST Repository

    Moulton, D.E.

    2012-10-01

    Seashells grow through the local deposition of mass along the aperture. Many mathematical descriptions of the shapes of shells have been provided over the years, and the basic logarithmic coiling seen in mollusks can be simulated with few parameters. However, the developmental mechanisms underlying shell coiling are largely not understood and the ubiquitous presence of ornamentation such as ribs, tubercles, or spines presents yet another level of difficulty. Here we develop a general model for shell growth based entirely on the local geometry and mechanics of the aperture and mantle. This local description enables us to efficiently describe both arbitrary growth velocities and the evolution of the shell aperture itself. We demonstrate how most shells can be simulated within this framework. We then turn to the mechanics underlying the shell morphogenesis, and develop models for the evolution of the aperture. We demonstrate that the elastic response of the mantle during shell deposition provides a natural mechanism for the formation of three-dimensional ornamentation in shells. © 2012 Elsevier Ltd.

  12. Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

    International Nuclear Information System (INIS)

    Stoldt, Conrad R; Bright, Victor M

    2006-01-01

    A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film. (topical review)

  13. [Spectroscopic study on film formation mechanism and structure of composite silanes-V-Zr passive film].

    Science.gov (United States)

    Wang, Lei; Liu, Chang-sheng; Shi, Lei; An, Cheng-qiang

    2015-02-01

    A composite silanes-V-Zr passive film was overlayed on hot-dip galvanized steel. Attenuated total reflection Fourier transformed infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectrometer (XPS) and radio frequency glow discharge optical emission spectrometry (rf-GD-OES) were used to characterize the molecular structure of the silanes-V-Zr passive film. The mechanism of film formation was discussed: The results show that the silane molecules are crosslinked as the main film former and inorganic inhibitor is even distributed in the film. The fitting peak of 100.7 eV in XPS single Si2p energy range spectra of the composite silanes-V-Zr passive film and the widening and strengthening of the Si--O infrared absorption peak at 1100 cm(-1) indicate that the silanes were adsorbed on the surface of zinc with chemical bond of Si--O--Zn, and the silane molecules were connected with each other by bond of Si--O--Si. Two characteristic absorption peaks of amide at 1650 and 1560 cm(-1) appear in the infrared spectroscopy of the composite silanes-V-Zr passive film, and a characteristic absorption peak of epoxy groups at 910 cm(-1) disappears in the infrared spectroscopy of the passive film. The results indicate that gamma-APT can be prepared through nucleophilic ring-opening of ethylene oxide in gamma-GPT molecule to form C--N covalent bonds. The rf-GD-OES results indicate that there is a oxygen enriched layer in 0.3 microm depth of the composite silanes-V-Zr passive film. Moreover, ZrF4, ZrO2 and some inorganic matter obtained by the reaction during the forming processof the composite silanes-V-Zr passive film are distributed evenly throughout the film. According to the film composition, the physical processes and chemical reactions during the film forming process were studied by using ATR-FTIR. Based on this, the film forming mechanism was proposed.

  14. Solution growth of Tb doped Gd_2O_3 film

    International Nuclear Information System (INIS)

    Ghosh, M.; Pitale, S.; Desai, D.G.; Patra, G.D.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Nanomaterials of Gd_2O_3 have proven applications in medical imaging and cancer therapy due to the presence of element Gd. Also Gd_2O_3 films have been grown by vapor phase method as well as self assembly in solution and studied as a high-k dielectric and efficient luminescence material. Here, we report a method to obtain Tb doped Gd_2O_3 film by solution growth method followed by suitable heat treatment. Uniform films of Tb doped Gadolinium hydroxycarbonate have been deposited on fused quartz substrates kept inside a solution containing gadolinium nitrate, terbium nitrate and Urea maintained at 90°C. Gadolinium hydroxy-carbonate films are then treated at 800°C for 2 hour to obtain Tb doped cubic Gd_2O_3 as confirmed by X-ray diffraction measurement. The photoluminescence spectra display characteristic Tb emission at 544 nm when excited at 285 nm. The lifetime of Tb emission is found to be of the order of few microseconds. (author)

  15. Formation of resonant bonding during growth of ultrathin GeTe films

    NARCIS (Netherlands)

    Wang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella

    2017-01-01

    A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of

  16. Film growth kinetics and electric field patterning during electrospray deposition of block copolymer thin films

    Science.gov (United States)

    Toth, Kristof; Hu, Hanqiong; Choo, Youngwoo; Loewenberg, Michael; Osuji, Chinedum

    The delivery of sub-micron droplets of dilute polymer solutions to a heated substrate by electrospray deposition (ESD) enables precisely controlled and continuous growth of block copolymer (BCP) thin films. Here we explore patterned deposition of BCP films by spatially varying the electric field at the substrate using an underlying charged grid, as well as film growth kinetics. Numerical analysis was performed to examine pattern fidelity by considering the trajectories of charged droplets during flight through imposed periodic field variations in the vicinity of the substrate. Our work uncovered an unexpected modality for improving the resolution of the patterning process via stronger field focusing through the use of a second oppositely charged grid beneath a primary focusing array, with an increase in highly localized droplet deposition on the intersecting nodes of the grid. Substrate coverage kinetics are considered for homopolymer deposition in the context of simple kinetic models incorporating temperature and molecular weight dependence of diffusivity. By contrast, film coverage kinetics for block copolymer depositions are additionally convoluted with preferential wetting and thickness-periodicity commensurability effects. NSF GRFP.

  17. Synthesis, growth, optical, mechanical and electrical properties of L ...

    Indian Academy of Sciences (India)

    K RAMAMURTHI. Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, India ..... Green light emission (532 nm) ... pattern was observed on the screen as shown in figure 5.

  18. Molecular mechanisms of intrauterine growth restriction.

    Science.gov (United States)

    Gurugubelli Krishna, Rao; Vishnu Bhat, B

    2017-07-10

    Intrauterine growth restriction (IUGR) is a pregnancy specific disease characterized by decreased growth rate of fetus than the normal growth potential at particular gestational age. In the current scenario it is a leading cause of fetal and neonatal morbidity and mortality. In the last decade exhilarating experimental studies from several laboratories have provided fascinating proof for comprehension of molecular basis of IUGR. Atypical expression of enzymes governed by TGFβ causes the placental apoptosis and altered expression of TGFβ due to hyper alimentation causes impairment of lung function. Crosstalk of cAMP with protein kinases plays a prominent role in the regulation of cortisol levels. Increasing levels of NOD1 proteins leads to development of IUGR by increasing the levels of inflammatory mediators. Increase in leptin synthesis in placental trophoblast cells is associated with IUGR. In this review, we emphasize on the regulatory mechanisms of IUGR and its associated diseases. They may help improve the in-utero fetal growth and provide a better therapeutic intervention for prevention and treatment of IUGR.

  19. Modified Starch-Chitosan Edible Films: Physicochemical and Mechanical Characterization

    Directory of Open Access Journals (Sweden)

    Monserrat Escamilla-García

    2017-12-01

    Full Text Available Starch and chitosan are widely used for preparation of edible films that are of great interest in food preservation. This work was aimed to analyze the relationship between structural and physical properties of edible films based on a mixture of chitosan and modified starches. In addition, films were tested for antimicrobial activity against Listeria innocua. Films were prepared by the casting method using chitosan (CT, waxy (WS, oxidized (OS and acetylated (AS corn starches and their mixtures. The CT-starches films showed improved barrier and mechanical properties as compared with those made from individual components, CT-OS film presented the lowest thickness (74 ± 7 µm, water content (11.53% ± 0.85%, w/w, solubility (26.77% ± 1.40%, w/v and water vapor permeability ((1.18 ± 0.48 × 10−9 g·s−1·m−1·Pa−1. This film showed low hardness (2.30 ± 0.19 MPa, low surface roughness (Rq = 3.20 ± 0.41 nm and was the most elastic (Young’s modulus = 0.11 ± 0.06 GPa. In addition, films made from CT-starches mixtures reduced CT antimicrobial activity against L. innocua, depending on the type of modified starch. This was attributed to interactions between acetyl groups of AS with the carbonyl and amino groups of CT, leaving CT with less positive charge. Interaction of the pyranose ring of OS with CT led to increased OH groups that upon interaction with amino groups, decreased the positive charge of CT, and this effect is responsible for the reduced antimicrobial activity. It was found that the type of starch modification influenced interactions with chitosan, leading to different films properties.

  20. Microstructure and mechanical properties of diamond films on titanium-aluminum-vanadium alloy

    Science.gov (United States)

    Catledge, Shane Aaron

    hardness, wear resistance, residual stress, and elastic modulus of the film. The mechanical properties of the diamond coatings were characterized by indentation and wear testing instruments. Finally, we developed a model based on fundamental thermodynamic and optical principles for extracting the time dependence of film thickness and surface roughness using optical pyrometry for the case of an absorbing substrate. This model provides a convenient way to determine film thickness during growth in CVD systems as well as a reliable estimate of surface roughness.

  1. Buckyball microwave plasmas: Fragmentation and diamond-film growth

    International Nuclear Information System (INIS)

    Gruen, D.M.; Liu, Shengzhong; Krauss, A.R.; Pan, Xianzheng.

    1993-08-01

    Microwave discharges (2.45 GHz) have been generated in C 60 -containing Ar produced by flowing Ar over fullerene-containing soot. Optical spectroscopy shows that the spectrum is dominated by the d 3 Πg-a 3 Πu Swan bands of C 2 and particularly the Δv = -2, -1, 0, +1, and +2 sequences. These results give direct evidence that C 2 is one of the products of C 60 fragmentation brought about, at least in part, by collisionally induced dissociation (CID). C 60 has been used as a precursor in a plasma-enhanced chemical vapor deposition (PECVD) experiment to grow diamond-thin films. The films, grown in an Ar/H 2 gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H 2 , 1500 W, 850 degree C substrate temperature), were characterized with SEM, XRD, and Raman spectroscopy. Growth rate was found to be ∼ 0.6 μ/hr. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor, would be predicted at a carbon content of 1% based on C 60 . Energetic and mechanistic arguments are advanced to rationalize this result based on C 2 as the growth species

  2. Growth of AlN films and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

    2006-06-15

    Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry

    National Research Council Canada - National Science Library

    George, Steven

    1997-01-01

    Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures...

  4. Mechanical Robustness and Hermeticity Monitoring for MEMS Thin Film Encapsulation

    NARCIS (Netherlands)

    Santagata, F.

    2011-01-01

    Many Micro-Electro-Mechanical-Systems (MEMS) require encapsulation, to prevent delicate sensor structures being exposed to external perturbations such as dust, humidity, touching, and gas pressure. An upcoming and cost-effective way of encapsulation is zero-level packaging or thin-film

  5. Numerical investigation of unsteady mixing mechanism in plate film cooling

    Directory of Open Access Journals (Sweden)

    Shuai Li

    2016-09-01

    Full Text Available A large-scale large eddy simulation in high performance personal computer clusters is carried out to present unsteady mixing mechanism of film cooling and the development of films. Simulation cases include a single-hole plate with the inclined angle of 30° and blowing ratio of 0.5, and a single-row plate with hole-spacing of 1.5D and 2D (diameters of the hole. According to the massive simulation results, some new unsteady phenomena of gas films are found. The vortex system is changed in different position with the development of film cooling with the time marching the process of a single-row plate film cooling. Due to the mutual interference effects including mutual exclusion, a certain periodic sloshing and mutual fusion, and the structures of a variety of vortices change between parallel gas films. Macroscopic flow structures and heat transfer behaviors are obtained based on 20 million grids and Reynolds number of 28600.

  6. Nano mechanical properties of carbon films modified by ion radiation

    International Nuclear Information System (INIS)

    Foerster, C.E.; Serbena, F.C.; Lepienski, C.M.; Odo, G.Y.; Zawislak, F.C.; Lopes, J.M.J.; Baptista, D.L.; Garcia, I.T.S.

    2000-01-01

    In present work it is measured hardness, Young modulus and friction coefficient values for different types of carbon films. These films were submitted to different ion bombardment conditions (energy and fluencies). The mechanical behavior was obtained by nano indentation technique and analyzed by the Oliver/Pharr method. For friction coefficient determination the nano scratch procedure is used. Pristine C 60 films (fullerenes) has a hardness of 0.33 GPa. After irradiation with different ions (He, N and Bi), the hardness raise to about 14 GPa and the Young modulus change from 20 to about 200 GPa. For photoresist film AZ-1350J irradiation with Ar and He change the hardness from 0.4 to about 14 GPa and the Young modulus raise from 4 to 80 GPa. In a-C-H the hardness change from 3.5 to 11 GPa when submitted to N irradiation. In PPA films the hardness value raise from 0.5 to 11 GPa after irradiation with Ar. These mechanical and tribological results were analyzed in terms of deposited energy by the ion irradiation and compared with those presented in the literature. (author)

  7. Barrier, mechanical and optical properties of whey protein concentrate films

    Directory of Open Access Journals (Sweden)

    Viviane Machado Azevedo

    2014-08-01

    Full Text Available Whey is recognized as a valuable source of high quality protein and, when processed as protein concentrate, may be used in the production of biodegradable films. The objective of the study was to develop films of whey protein concentrate 80% (WPC at concentrations of 6, 8, 10 and 12% and evaluate the influence of this factor in the barrier, mechanical and optical properties of the films. Treatments showed moisture content with a mean value of 22.10% ± 0.76and high solubility values between 56.67 to 62.42%. Thus, there is little or no influence of varying the concentration of WPC in these properties and high hydrophilicity of the films. With increasing concentration of WPC, increases the water vapor permeability of the films (7.42 x 10-13 to 3.49 x 10-12 g.m-1.s-1.Pa-1. The treatment at the concentration of 6% of WPC showed a higher modulus of elasticity (287.90 ± 41.79 MPa. Thegreater rigidity in films with higher concentrations is possibly due to the greater number of bonds between molecules of the polymeric matrix. The films have the same puncture resistance. The increased concentration of WPC promotes resistance to the action of a localized force. In general, films of whey protein concentrate in the tested concentrations exhibited slightly yellowish color and transparency, and can be used in food packaging that requiring intermediate permeability to water vapor, to keep moisture and texture desired.

  8. Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

    Energy Technology Data Exchange (ETDEWEB)

    Villalpando, I. [Centro de Investigacion de los Recursos Naturales, Antigua Normal Rural, Salaices, Lopez, Chihuahua (Mexico); John, P.; Wilson, J. I. B., E-mail: isaelav@hotmail.com [School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14-4AS (United Kingdom)

    2017-11-01

    The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

  9. Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

    International Nuclear Information System (INIS)

    Villalpando, I.; John, P.; Wilson, J. I. B.

    2017-01-01

    The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

  10. The Effect of UV Aging on Antimicrobial and Mechanical Properties of PLA Films with Incorporated Zinc Oxide Nanoparticles.

    Science.gov (United States)

    Mizielińska, Małgorzata; Kowalska, Urszula; Jarosz, Michał; Sumińska, Patrycja; Landercy, Nicolas; Duquesne, Emmanuel

    2018-04-18

    The aim of this study was to examine the influence of accelerated UV-aging on the activity against chosen microorganisms and the mechanical properties of poly-lactic acid (PLA) films enhanced with ZnO nanoparticles. The pure PLA films and tri-layered PLAZnO1%/PLA/PLAZnO1% films of 150 µm thickness were extruded. The samples were treated with UV-A and Q-SUN irradiation. After irradiation the antimicrobial activity and mechanical properties of the films were analyzed. The results of the study demonstrated that PLA films did not inhibit the growth of Staphylococcus aureus , Bacillus cereus , Escherichia coli , Bacillus atrophaeus , and Candida albicans cells. PLA films with incorporated zinc oxide nanoparticles decreased the number of analyzed microorganisms. Accelerated UV aging had no negative effect on the activity of the film containing nano-ZnO against Gram-positive bacteria, but it influenced the activity against Gram-negative cells and C. albicans . Q-SUN irradiation decreased the antimicrobial effect of films with incorporated nanoparticles against B. cereus . UV-A and Q-UV irradiation did not influence the mechanical properties of PLA films containing incorporated ZnO nanoparticles.

  11. Antimicrobial, Optical and Mechanical Properties of Chitosan-Starch Films with Natural Extracts.

    Science.gov (United States)

    Lozano-Navarro, Jessica I; Díaz-Zavala, Nancy P; Velasco-Santos, Carlos; Martínez-Hernández, Ana L; Tijerina-Ramos, Beatriz I; García-Hernández, Margarita; Rivera-Armenta, José L; Páramo-García, Ulises; Reyes-de la Torre, Adriana I

    2017-05-05

    Natural extracts possess several kinds of antioxidants (anthocyanins, betalains, thymol, carvacrol, and resveratrol) that have also demonstrated antimicrobial properties. In order to study these properties, extracts from cranberry, blueberry, beetroot, pomegranate, oregano, pitaya, and resveratrol (from grapes) were obtained. Growth inhibition tests of mesophilic aerobes, coliforms, and fungi were conducted in films prepared from the extracts in accordance with Mexican Official Norms (NOM). Optical properties such as transparency and opacity, mechanical properties, and pH were also analyzed in these materials. The films with beetroot, cranberry, and blueberry extracts demonstrated the best antimicrobial activity against various bacteria and fungi in comparison with unmodified chitosan-starch film. This study shows that the addition of antioxidants improved the antimicrobial performance of these films. It was also found that antimicrobial properties are inherent to the films. These polymers combined with the extracts effectively inhibit or reduce microorganism growth from human and environmental contact; therefore, previous sterilization could be unnecessary in comparison with traditional plastics. The presence of extracts decreased transmittance percentages at 280 and 400 nm, as well as the transparency values, while increasing their opacity values, providing better UV-VIS light barrier properties. Despite diminished glass transition temperatures ( T g), the values obtained are still adequate for food packaging applications.

  12. Antimicrobial, Optical and Mechanical Properties of Chitosan–Starch Films with Natural Extracts

    Science.gov (United States)

    Lozano-Navarro, Jessica I.; Díaz-Zavala, Nancy P.; Velasco-Santos, Carlos; Martínez-Hernández, Ana L.; Tijerina-Ramos, Beatriz I.; García-Hernández, Margarita; Rivera-Armenta, José L.; Páramo-García, Ulises; Reyes-de la Torre, Adriana I.

    2017-01-01

    Natural extracts possess several kinds of antioxidants (anthocyanins, betalains, thymol, carvacrol, and resveratrol) that have also demonstrated antimicrobial properties. In order to study these properties, extracts from cranberry, blueberry, beetroot, pomegranate, oregano, pitaya, and resveratrol (from grapes) were obtained. Growth inhibition tests of mesophilic aerobes, coliforms, and fungi were conducted in films prepared from the extracts in accordance with Mexican Official Norms (NOM). Optical properties such as transparency and opacity, mechanical properties, and pH were also analyzed in these materials. The films with beetroot, cranberry, and blueberry extracts demonstrated the best antimicrobial activity against various bacteria and fungi in comparison with unmodified chitosan–starch film. This study shows that the addition of antioxidants improved the antimicrobial performance of these films. It was also found that antimicrobial properties are inherent to the films. These polymers combined with the extracts effectively inhibit or reduce microorganism growth from human and environmental contact; therefore, previous sterilization could be unnecessary in comparison with traditional plastics. The presence of extracts decreased transmittance percentages at 280 and 400 nm, as well as the transparency values, while increasing their opacity values, providing better UV–VIS light barrier properties. Despite diminished glass transition temperatures (Tg), the values obtained are still adequate for food packaging applications. PMID:28475151

  13. Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

    Science.gov (United States)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

    2018-04-27

    The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

  14. A nonlinear model for surface segregation and solute trapping during planar film growth

    International Nuclear Information System (INIS)

    Han, Xiaoying; Spencer, Brian J.

    2007-01-01

    Surface segregation and solute trapping during planar film growth is one of the important issues in molecular beam epitaxy, yet the study on surface composition has been largely restricted to experimental work. This paper introduces some mathematical models of surface composition during planar film growth. Analytical solutions are obtained for the surface composition during growth

  15. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  16. Growth, characterization and device development in monocrystalline diamond films

    Science.gov (United States)

    Davis, R. F.; Glass, J. T.; Nemanich, R. J.; Bozeman, S. P.; Sowers, A. T.

    1995-06-01

    Experimental and theoretical studies concerned with interface interactions of diamond with Si, Ni, and Ni3Si substrates have been conducted. Oriented diamond films deposited on (100) Si were characterized by polar Raman, polar x-ray diffraction (XRD), and cross-sectional high resolution transmission electron microscopy (HRTEM). These sutides showed that the diamond(100)/Si(100) interface adopted the 3:2-match arrangement rather than a 45 deg rotation. Extended Hueckel tight-binding (EHTB) electronic structure calculations for a model system revealed that the interface interaction favors the 3:2-match arrangement. Growth on polycrystalline Ni3Si resulted in oriented diamond particles; under the same growth conditions, graphite was formed on the nickel substrate. Our EHTB electronic structure calculations showed that the (111) and (100) surfaces of Ni3Si have a strong preference for diamond nucleation over graphite nucleation, but this was not the case for the (111) and (100) surfaces of Ni.

  17. Growth modes of pentacene films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wisz, G.; Kuzma, M.; Virt, I.; Sagan, P.; Rudyj, I.

    2011-01-01

    Thin pentacene films were deposited on KCl and ITO/glass substrates by the pulsed laser deposition method (PLD) using a YAG:Nd 3+ laser with a second harmonic (λ = 532 nm). We compared the structure of the layer on differently oriented substrates with respect to the pentacene plasma plume - vertical and parallel orientation. The structure of the layers formed was examined using SEM, RHEED and THEED methods. The lattice parameters of the layer deposited on KCl were determined from THEED pattern (a = 5.928 A, b 7.874 A, c = 14,98 A, α = 76.54 o , β 75.17 o , γ = 89.20 o ). The preferred direction [11-bar 0] of the layer growth on KCl substrate was addressed. The effect of the substrate orientation results in a different growth mode of the layers.

  18. Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  19. Observation of feature ripening inversion effect at the percolation threshold for the growth of thin silver films

    Energy Technology Data Exchange (ETDEWEB)

    Nehm, Frederik, E-mail: frederik.nehm@iapp.de; Schubert, Sylvio; Müller-Meskamp, Lars; Leo, Karl

    2014-04-01

    The growth behavior of thin silver films on organic layers is investigated during deposition by means of simultaneous in-situ monitoring of sheet resistance and transmittance. Thermally evaporated films up to 11 nm show a distinct percolation behavior with strong resistance drop at the percolation thickness. Additionally, evaporations are divided into a sequence of one nanometer steps. In the deposition breaks, the films exhibit a ripening effect with an inversion at the percolation thickness, by changing from an increasing to decreasing sheet resistance over time. Scanning electron micrographs suggest same ripening mechanisms for islands below the percolation thickness as for holes above. - Highlights: • Fundamental understanding of metal thin film growth is presented. • Optical and electrical in-situ measurements used for optimizing transparent electrodes • Stepwise Ag deposition reveals extraordinary ripening effects. • Feature ripening inversion is discovered at the percolation threshold.

  20. Observation of feature ripening inversion effect at the percolation threshold for the growth of thin silver films

    International Nuclear Information System (INIS)

    Nehm, Frederik; Schubert, Sylvio; Müller-Meskamp, Lars; Leo, Karl

    2014-01-01

    The growth behavior of thin silver films on organic layers is investigated during deposition by means of simultaneous in-situ monitoring of sheet resistance and transmittance. Thermally evaporated films up to 11 nm show a distinct percolation behavior with strong resistance drop at the percolation thickness. Additionally, evaporations are divided into a sequence of one nanometer steps. In the deposition breaks, the films exhibit a ripening effect with an inversion at the percolation thickness, by changing from an increasing to decreasing sheet resistance over time. Scanning electron micrographs suggest same ripening mechanisms for islands below the percolation thickness as for holes above. - Highlights: • Fundamental understanding of metal thin film growth is presented. • Optical and electrical in-situ measurements used for optimizing transparent electrodes • Stepwise Ag deposition reveals extraordinary ripening effects. • Feature ripening inversion is discovered at the percolation threshold

  1. The effect of chitosan and whey proteins-chitosan films on the growth of Penicillium expansum in apples.

    Science.gov (United States)

    Simonaitiene, Dovile; Brink, Ieva; Sipailiene, Ausra; Leskauskaite, Daiva

    2015-05-01

    Penicillium expansum causes a major post-harvest disease of apples. The aim of this study was to investigate the inhibition effect of chitosan and whey proteins-chitosan films containing different amounts of quince and cranberry juice against P. expansum on the simulation medium and on apples. The mechanical properties of films were also evaluated. The presence of cranberry and quince juice in the composition of chitosan and whey proteins-chitosan films caused a significant (P ≤ 0.05) increase in elasticity and decrease in tensile strength of films. Chitosan and whey proteins-chitosan films with quince and cranberry juice demonstrated a significant (P ≤ 0.05) inhibition effect against P. expansum growth on the simulated medium and apples. The presence of cranberry juice in the composition of chitosan and whey proteins-chitosan films resulted in a longer lag phase and a lower P. expansum growth rate on the simulation medium in comparison with films made with the addition of quince juice. These differences were not evident when experiment was conducted with apples. Addition of quince and cranberry juice to the chitosan and whey proteins-chitosan films as natural antifungal agents has some potential for prolonging the shelf life of apples. © 2014 Society of Chemical Industry.

  2. Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  3. Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskelae, M.

    2004-01-01

    Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous

  4. Piezoresistivity of mechanically drawn single-walled carbon nanotube (SWCNT) thin films-: mechanism and optimizing principle

    Science.gov (United States)

    Obitayo, Waris

    The individual carbon nanotube (CNT) based strain sensors have been found to have excellent piezoresistive properties with a reported gauge factor (GF) of up to 3000. This GF on the other hand, has been shown to be structurally dependent on the nanotubes. In contrast, to individual CNT based strain sensors, the ensemble CNT based strain sensors have very low GFs e.g. for a single walled carbon nanotube (SWCNT) thin film strain sensor, GF is ~1. As a result, studies which are mostly numerical/analytical have revealed the dependence of piezoresistivity on key parameters like concentration, orientation, length and diameter, aspect ratio, energy barrier height and Poisson ratio of polymer matrix. The fundamental understanding of the piezoresistive mechanism in an ensemble CNT based strain sensor still remains unclear, largely due to discrepancies in the outcomes of these numerical studies. Besides, there have been little or no experimental confirmation of these studies. The goal of my PhD is to study the mechanism and the optimizing principle of a SWCNT thin film strain sensor and provide experimental validation of the numerical/analytical investigations. The dependence of the piezoresistivity on key parameters like orientation, network density, bundle diameter (effective tunneling area), and length is studied, and how one can effectively optimize the piezoresistive behavior of a SWCNT thin film strain sensors. To reach this goal, my first research accomplishment involves the study of orientation of SWCNTs and its effect on the piezoresistivity of mechanically drawn SWCNT thin film based piezoresistive sensors. Using polarized Raman spectroscopy analysis and coupled electrical-mechanical test, a quantitative relationship between the strain sensitivity and SWCNT alignment order parameter was established. As compared to randomly oriented SWCNT thin films, the one with draw ratio of 3.2 exhibited ~6x increase on the GF. My second accomplishment involves studying the

  5. Practice-oriented optical thin film growth simulation via multiple scale approach

    Energy Technology Data Exchange (ETDEWEB)

    Turowski, Marcus, E-mail: m.turowski@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Melzig, Thomas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Moskovkin, Pavel [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Daniel, Alain [Centre for Research in Metallurgy, CRM, 21 Avenue du bois Saint Jean, Liège 4000 (Belgium); Pflug, Andreas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Lucas, Stéphane [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

    2015-10-01

    Simulation of the coating process is a very promising approach for the understanding of thin film formation. Nevertheless, this complex matter cannot be covered by a single simulation technique. To consider all mechanisms and processes influencing the optical properties of the growing thin films, various common theoretical methods have been combined to a multi-scale model approach. The simulation techniques have been selected in order to describe all processes in the coating chamber, especially the various mechanisms of thin film growth, and to enable the analysis of the resulting structural as well as optical and electronic layer properties. All methods are merged with adapted communication interfaces to achieve optimum compatibility of the different approaches and to generate physically meaningful results. The present contribution offers an approach for the full simulation of an Ion Beam Sputtering (IBS) coating process combining direct simulation Monte Carlo, classical molecular dynamics, kinetic Monte Carlo, and density functional theory. The simulation is performed exemplary for an existing IBS-coating plant to achieve a validation of the developed multi-scale approach. Finally, the modeled results are compared to experimental data. - Highlights: • A model approach for simulating an Ion Beam Sputtering (IBS) process is presented. • In order to combine the different techniques, optimized interfaces are developed. • The transport of atomic species in the coating chamber is calculated. • We modeled structural and optical film properties based on simulated IBS parameter. • The modeled and the experimental refractive index data fit very well.

  6. Nucleation, growth and evolution of calcium phosphate films on calcite.

    Science.gov (United States)

    Naidu, Sonia; Scherer, George W

    2014-12-01

    Marble, a stone composed of the mineral calcite, is subject to chemically induced weathering in nature due to its relatively high dissolution rate in acid rain. To protect monuments and sculpture from corrosion, we are investigating the application of thin layers of hydroxyapatite (HAP) onto marble. The motivation for using HAP is its low dissolution rate and crystal and lattice compatibility with calcite. A mild, wet chemical synthesis route, in which diammonium hydrogen phosphate salt was reacted with marble, alone and with cationic and anionic precursors under different reaction conditions, was used to produce inorganic HAP layers on marble. Nucleation and growth on the calcite substrate was studied, as well as metastable phase evolution, using scanning electron microscopy, grazing incidence X-ray diffraction, and atomic force microscopy. Film nucleation was enhanced by surface roughness. The rate of nucleation and the growth rate of the film increased with cationic (calcium) and anionic (carbonate) precursor additions. Calcium additions also influenced phase formation, introducing a metastable phase (octacalcium phosphate) and a different phase evolution sequence. Copyright © 2014 Elsevier Inc. All rights reserved.

  7. Mechanical properties of molybdenum coated with titanium carbide film

    International Nuclear Information System (INIS)

    Shikama, T.; Shinno, H.; Fukutomi, M.; Fujitsuka, M.; Okada, M.

    1983-01-01

    TiC-coated molybdenum is mechanically tensile tested. The 6 μm thick TiC-coated molybdenum has a higher 0.2% proof strength with a slight decrease in uniform and rupture elongation than the uncoated one. This strengthening effect of the TiC coating can be explained by the constrained effect of the high strength TiC film. The 1.2 μm thick TiC-coated molybdenum starts its plastic deformation at a lower stress than the uncoated one. Also, the coating makes the stress-strain curve more smooth. These effects are attributed to the surface effect, namely, that the interface between the molybdenum substrate and the strong and brittle TiC film acts as a strong dislocation source. The compressive stress in the TiC film will also help the start of plastic deformation at lower external stresses. (author)

  8. In situ spectroscopic ellipsometry as a surface sensitive tool to probe thin film growth

    International Nuclear Information System (INIS)

    Liu, C.

    1999-01-01

    Sputtered thin film and multilayer x-ray mirrors are made routinely at the Advanced Photon Source (APS) for the APS users. Precise film growth control and characterization are very critical in fabricating high-quality x-ray mirrors. Film thickness calibrations are carried out using in situ and ex situ spectroscopic ellipsometry, interferometry, and x-ray scattering. To better understand the growth and optical properties of different thin film systems, we have carried out a systematic study of sputtered thin films of Au, Rh, Pg Pd, Cu, and Cr, using in situ ellipsometry. Multiple data sets were obtained in situ for each film material with incremental thicknesses and were analyzed with their correlation in mind. We found that in situ spectroscopic ellipsometry as a surface-sensitive tool can also be used to probe the growth and morphology of the thin film system. This application of in situ spectroscopic ellipsometry for metal thin film systems will be discussed

  9. Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

    Energy Technology Data Exchange (ETDEWEB)

    Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

    2017-06-15

    Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

  10. Temperature-dependent evolution of chemisorbed digermane in Ge thin film growth

    International Nuclear Information System (INIS)

    Eres, D.; Sharp, J.W.

    1992-01-01

    The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time- resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses

  11. The influence of growth temperature on the structural characteristics of YBa2Cu3O7-δ films: a Raman scattering study

    International Nuclear Information System (INIS)

    Belousov, M.V.; Davydov, V.Yu.; Sherman, A.B.

    1993-01-01

    Orientation of YBa 2 Cu 3 O 7-δ films at the surface and at the film-(100) MgO substrate interface for various growth temperatures T s have been studied using Raman scattering. On the film-substrate interface the films were c-oriented for T s >670 degrees C and a-oriented for lower growth temperatures. Films grown at T s approximately=670 degrees C to a thickness >0.2 mu m contained a transition from the c- to the a-orientation near the surface. A possible mechanism for the influence of growth temperature on the YBa 2 Cu 3 O 7-δ film orientation is discussed. (author)

  12. Impact of silver metallization and electron irradiation on the mechanical deformation of polyimide films

    Science.gov (United States)

    Muradov, A. D.; Mukashev, K. M.; Yar-Mukhamedova, G. Sh.; Korobova, N. E.

    2017-11-01

    The impact of silver metallization and electron irradiation on the physical and mechanical properties of polyimide films has been studied. The metal that impregnated the structure of the polyimide substrate was 1-5 μm. The surface coatings contained 80-97% of the relative silver mirror in the visible and infrared regions. Irradiation was performed at the ELU-6 linear accelerator with an average beam electron energy of 2 MeV, an integral current of up to 1000 μA, a pulse repetition rate of 200 Hz, and a pulse duration of 5 μs. The absorbed dose in the samples was 10, 20, 30, and 40 MGy. The samples were deformed at room temperature under uniaxial tension on an Instron 5982 universal testing system. The structural changes in the composite materials that result from the impact of the physical factors were studied using an X-ray diffractometer DRON-2M in air at 293 K using Cu K α radiation (λαCu = 1.5418 Å). A substantial growth of mechanical characteristics resulting from the film metallization, as compared to the pure film, was observed. The growth of the ultimate strength by Δσ = 105 MPa and the plasticity by Δɛ = 75% is connected with the characteristics of the change of structure of the metallized films and the chemical etching conditions. The electron irradiation of the metallized polyimide film worsens its elastic and strength characteristics due to the formation of new phases in the form of silver oxide in the coating. The concentration of these phases increased with increasing dose, which was also the result of the violation of the ordered material structure, namely, the rupture of polyimide macromolecule bonds and the formation of new phases of silver in the coating. A mathematical model was obtained that predicts the elastic properties of silver metallized polyimide films. This model agrees with the experimental data.

  13. Synthesis and mechanical properties of boron suboxide thin films

    International Nuclear Information System (INIS)

    Music, Denis; Schneider, Jochen M.; Kugler, Veronika; Nakao, Setsuo; Jin, Ping; Oestblom, Mattias; Hultman, Lars; Helmersson, Ulf

    2002-01-01

    Boron suboxide thin films have been deposited on Si(100) and graphite substrates by reactive rf magnetron sputtering of a sintered B target in an Ar/O 2 atmosphere. X-ray photoelectron spectroscopy, elastic recoil detection analysis, Fourier transform infrared spectroscopy, x-ray diffraction, and transmission electron microscopy were applied to study the influence of the O 2 partial pressure on the film composition and microstructure. BO x thin films with x=[0.02-0.21] and a C impurity of approximately 0.3 at. % were formed by varying the O 2 partial pressure from 7.2x10 -7 to 3.3x10 -2 Pa. All films were amorphous and the films with x≥0.15 contained boric acid on the surface due to a probable chemical reaction with water in laboratory atmosphere. Mechanical properties were evaluated by nanoindentation. As x was increased from 0.02 to 0.21, the elastic modulus decreased from 272 to 109 GPa. The change in the elastic modulus was attributed to the O concentration variations

  14. Effects of local film properties on the nucleation and growth of tin whiskers and hillocks

    Science.gov (United States)

    Sarobol, Pylin

    Whiskers and hillocks grow spontaneously on Pb-free Sn electrodeposited films as a response to thin film stresses. Stress relaxation occurs by atom deposition to specific grain boundaries in the plane of the film, with hillocks being formed when grain boundary migration accompanies growth out of the plane of the film. The implication for whisker formation in electronics is serious: whiskers can grow to be millimeters long, sometimes causing short circuiting between adjacent components and, thereby, posing serious electrical reliability risks. In order to develop more effective whisker mitigation strategies, a predictive physics-based model has been needed. A growth model is developed, based on grain boundary faceting, localized Coble creep, as well as grain boundary sliding for whiskers, and grain boundary sliding with shear induced grain boundary migration for hillocks. In this model of whisker formation, two mechanisms are important: accretion of atoms by Coble creep on grain boundary planes normal to the growth direction inducing a grain boundary shear and grain boundary sliding in the direction of whisker growth. The model accurately captures the importance of the geometry of "surface grains"---shallow grains on film surfaces whose depths are significantly less than their in-plane grain sizes. A critical factor in the analysis is the ratio of the grain boundary sliding coefficient to the in-plane film compressive stress. If the accretion-induced shear stresses are not coupled to grain boundary motion and sliding occurs, a whisker forms. If the shear stress is coupled to grain boundary migration, a hillock forms. Based on this model, long whiskers grow from shallow surface grains with easy grain boundary sliding in the direction of growth. Other observed growth morphologies will be discussed in light of our model. Additional insights into the preferred sites for whisker and hillock growth were developed based on elastic anisotropy, local film microstructure

  15. Effects of an ultraviolet-visible rays translation film on growth of leaf or root vegetables

    International Nuclear Information System (INIS)

    Hamamoto, H.; Ueno, K.; Yamazaki, K.

    2008-01-01

    A new film that absorbs ultraviolet radiation (UV) and fluoresces red light was tested as a rain shelter for the cultivation of turnip (Brassica rapa L.), spinach (Spinacia oleracea L.), and Welsh onion (Allium fistulosum L.). The effect of this UV-visible ray translation film on various growth parameters (height, fresh and dry weight, leaf area and leaf sheath diameter) was compared with those under normal clear film, new UV-cut film, and used UV-cut film respectively. The transmissivity of UV was about 70% for the normal clear film, about 20% for the UV-visible ray translation film and used UV-cut film, and about 10% for the new UV-cut film. The transmissivity of photosynthetically active radiation (PAR) was about 90% for the normal clear film and the new UV-cut film, and about 80% for the used UV-cut film, while the mean transmissivity of PAR was about 80% for the UV-visible ray translation film, with about 60% transmissivity of blue radiation and over 90% of red radiation. The UV-visible ray translation film did not promote the growth of turnip roots but did significantly promote the growth of spinaches and Welsh onions compared with the normal clear film. The UV-visible ray translation film cover promoted the growth of spinaches and Welsh onions to a similar or greater extent compared to the new UV-cut film and also to a greater extent compared to the used UV-cut film

  16. Peculiarities in film growth of ferroelectric complex oxides in ion-plasma sputtering

    International Nuclear Information System (INIS)

    Mukhortov, V.M.; Golovko, Yu.I.; Mukhortov, Vl.M.; Dudkevich, V.P.

    1981-01-01

    Experimental investigation into the process of complex oxide film growth (using BaTiO 3 and (Ba,Sr)TiO 3 as an example) during ion-plasma sputtering has been carried out. It is shown that neutral excited atoms are knocked out of a ceramic target during its ion bombardment. Removing from the target they loss energy at the expence of collisions and at some distance hsub(cr) the oxidation reaction (BaO, TiO, TiO 2 , SrO) becomes possible. So the ''construction'' material comes in either in the form of atoms or in the form of molecules of simple oxides depending on a distance between cathode and substrate. Two mechanisms of synthesis and crystallization distinguished with dependences of growth rate, elementary cell parameters and other structure characteristics on precipitation temperature correspond to two precipitation mechanisms. Part of re-evaporation and reduction processes is discussed [ru

  17. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, R.K.; Ghosh, K.; Kahol, P.K. [Department of Physics, Astronomy and Materials Science, Missouri State University, Springfield, MO 65897 (United States); Yoon, J. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States); Guha, S. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States)], E-mail: guhas@missouri.edu

    2008-08-30

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the {beta} phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

  18. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Kahol, P.K.; Yoon, J.; Guha, S.

    2008-01-01

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films

  19. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    Science.gov (United States)

    Gupta, R. K.; Ghosh, K.; Kahol, P. K.; Yoon, J.; Guha, S.

    2008-08-01

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

  20. Mechanics of fragmentation of crocodile skin and other thin films

    Science.gov (United States)

    Qin, Zhao; Pugno, Nicola M.; Buehler, Markus J.

    2014-01-01

    Fragmentation of thin layers of materials is mediated by a network of cracks on its surface. It is commonly seen in dehydrated paintings or asphalt pavements and even in graphene or other two-dimensional materials, but is also observed in the characteristic polygonal pattern on a crocodile's head. Here, we build a simple mechanical model of a thin film and investigate the generation and development of fragmentation patterns as the material is exposed to various modes of deformation. We find that the characteristic size of fragmentation, defined by the mean diameter of polygons, is strictly governed by mechanical properties of the film material. Our result demonstrates that skin fragmentation on the head of crocodiles is dominated by that it features a small ratio between the fracture energy and Young's modulus, and the patterns agree well with experimental observations. Understanding this mechanics-driven process could be applied to improve the lifetime and reliability of thin film coatings by mimicking crocodile skin. PMID:24862190

  1. Surface qualities after chemical-mechanical polishing on thin films

    International Nuclear Information System (INIS)

    Fu, Wei-En; Lin, Tzeng-Yow; Chen, Meng-Ke; Chen, Chao-Chang A.

    2009-01-01

    Demands for substrate and film surface planarizations significantly increase as the feature sizes of Integrated Circuit (IC) components continue to shrink. Chemical Mechanical Polishing (CMP), incorporating chemical and mechanical interactions to planarize chemically modified surface layers, has been one of the major manufacturing processes to provide global and local surface planarizations in IC fabrications. Not only is the material removal rate a concern, the qualities of the CMP produced surface are critical as well, such as surface finish, defects and surface stresses. This paper is to examine the CMP produced surface roughness on tungsten or W thin films based on the CMP process conditions. The W thin films with thickness below 1000 nm on silicon wafer were chemical-mechanical polished at different down pressures and platen speeds to produce different surface roughness. The surface roughness measurements were performed by an atomic force microscope (DI D3100). Results show that the quality of surface finish (R a value) is determined by the combined effects of down pressures and platen speeds. An optimal polishing condition is, then, possible for selecting the down pressures and platen speeds.

  2. Improved interface growth and enhanced flux pinning in YBCO films deposited on an advanced IBAD-MgO based template

    Science.gov (United States)

    Khan, M. Z.; Zhao, Y.; Wu, X.; Malmivirta, M.; Huhtinen, H.; Paturi, P.

    2018-02-01

    The growth mechanism is studied from the flux pinning point of view in small-scale YBa2Cu3O6+x (YBCO) thin films deposited on a polycrystalline hastelloy with advanced IBAD-MgO based buffer layer architecture. When compared the situation with YBCO films grown on single crystal substrates, the most critical issues that affect the suitable defect formation and thus the optimal vortex pinning landscape, have been studied as a function of the growth temperature and the film thickness evolution. We can conclude that the best critical current property in a wide applied magnetic field range is observed in films grown at relatively low temperature and having intermediate thickness. These phenomena are linked to the combination of the improved interface growth, to the film thickness related crystalline relaxation and to the formation of linear array of edge dislocations that forms the low-angle grain boundaries through the entire film thickness and thus improve the vortex pinning properties. Hence, the optimized buffer layer structure proved to be particularly suitable for new coated conductor solutions.

  3. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    Science.gov (United States)

    Dimitrakellis, P.; Kalampounias, A. G.; Spiliopoulos, N.; Amanatides, E.; Mataras, D.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-07-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  4. Disilane as a growth rate catalyst of plasma deposited microcrystalline silicon thin films

    International Nuclear Information System (INIS)

    Dimitrakellis, P.; Amanatides, E.; Mataras, D.; Kalampounias, A. G.; Spiliopoulos, N.; Lahootun, V.; Coeuret, F.; Madec, A.

    2016-01-01

    The effect of small disilane addition on the gas phase properties of silane-hydrogen plasmas and the microcrystalline silicon thin films growth is presented. The investigation was conducted in the high pressure regime and for constant power dissipation in the discharge with the support of plasma diagnostics, thin film studies and calculations of discharge microscopic parameters and gas dissociation rates. The experimental data and the calculations show a strong effect of disilane on the electrical properties of the discharge in the pressure window from 2 to 3 Torr that is followed by significant raise of the electron number density and the drop of the sheaths electric field intensity. Deposition rate measurements show an important four to six times increase even for disilane mole fractions as low as 0.3 %. The deposition rate enhancement was followed by a drop of the material crystalline volume fraction but films with crystallinity above 40 % were deposited with different combinations of total gas pressure, disilane and silane molar ratios. The enhancement was partly explained by the increase of the electron impact dissociation rate of silane which rises by 40% even for 0.1% disilane mole fraction. The calculations of the gas usage, the dissociation and the deposition efficiencies show that the beneficial effect on the growth rate is not just the result of the increase of Si-containing molecules density but significant changes on the species participating to the deposition and the mechanism of the film growth are caused by the disilane addition. The enhanced participation of the highly sticking to the surface radical such as disilylene, which is the main product of disilane dissociation, was considered as the most probable reason for the significant raise of the deposition efficiency. The catalytic effect of such type of radical on the surface reactivity of species with lower sticking probability is further discussed, while it is also used to explain the restricted

  5. Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

    Directory of Open Access Journals (Sweden)

    Deepu Thomas

    2014-01-01

    Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

  6. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

  7. Dislocation/hydrogen interaction mechanisms in hydrided nanocrystalline palladium films

    International Nuclear Information System (INIS)

    Amin-Ahmadi, Behnam; Connétable, Damien; Fivel, Marc; Tanguy, Döme; Delmelle, Renaud; Turner, Stuart; Malet, Loic; Godet, Stephane; Pardoen, Thomas; Proost, Joris; Schryvers, Dominique

    2016-01-01

    The nanoscale plasticity mechanisms activated during hydriding cycles in sputtered nanocrystalline Pd films have been investigated ex-situ using advanced transmission electron microscopy techniques. The internal stress developing within the films during hydriding has been monitored in-situ. Results showed that in Pd films hydrided to β-phase, local plasticity was mainly controlled by dislocation activity in spite of the small grain size. Changes of the grain size distribution and the crystallographic texture have not been observed. In contrast, significant microstructural changes were not observed in Pd films hydrided to α-phase. Moreover, the effect of hydrogen loading on the nature and density of dislocations has been investigated using aberration-corrected TEM. Surprisingly, a high density of shear type stacking faults has been observed after dehydriding, indicating a significant effect of hydrogen on the nucleation energy barriers of Shockley partial dislocations. Ab-initio calculations of the effect of hydrogen on the intrinsic stable and unstable stacking fault energies of palladium confirm the experimental observations.

  8. Structure and mechanical properties of silica doped zirconia thin films

    Energy Technology Data Exchange (ETDEWEB)

    Uhlmann, Ina, E-mail: uhlmann@ceramics.tu-darmstadt.de [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Hawelka, Dominik [Fraunhofer Institute for Laser Technology ILT, 52074 Aachen (Germany); Hildebrandt, Erwin [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Pradella, Jens [Merck KGaA Darmstadt, 64293 Darmstadt (Germany); Rödel, Jürgen [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2013-01-01

    Sol–gel based wear resistant coatings are presented as an alternative to existing vapor deposition coatings. The films consist of zirconia which has been doped with 8 wt.% silica. Crack-free single as well as multilayer coatings with thicknesses of 80 and 150 nm, respectively, could be produced after sintering at 1000 °C. The evolution of layer thickness, optical, chemical and mechanical properties during film annealing was investigated by ellipsometry, scanning electron microscopy, thermal gravimetric analysis, Fourier transform infrared spectroscopy, X-ray diffraction, nanoindentation and micro-abrasion. Micro-abrasion has been established as an easy and powerful tool to achieve first comparative abrasion data which could be correlated to hardness, Young's modulus and structure of the films. Above 600 °C a tetragonal, oxide coating with a Young's modulus ranging from 80 to 90 GPa, a hardness from 7 to 8 GPa and an increased abrasion resistance was obtained. The film density reached 4.64 g/cm{sup 3} with the mean refractive index n{sub 550} {sub nm} lying between 1.88 and 1.93. - Highlights: ► Sol–gel zirconia–8 wt.% silica coatings with hardness up to 8 GPa achieved ► Layer thickness as compared by ellipsometry and scanning electron microscopy ► Crack-free multilayer coatings produced up to 150 nm.

  9. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Zambrano, G. [Grupo de Peliculas Delgadas, Departamento de Fisica, Universidad del Valle, Cali (Colombia); Aperador, W. [Ingenieria Mecatronica, Universidad Militar Nueva Granada, Bogota (Colombia); Escobar-Alarcon, L.; Camps, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico, DF 11801 (Mexico)

    2011-10-15

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N{sub 2} gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  10. Mechanical and electrochemical characterization of vanadium nitride (VN) thin films

    International Nuclear Information System (INIS)

    Caicedo, J.C.; Zambrano, G.; Aperador, W.; Escobar-Alarcon, L.; Camps, E.

    2011-01-01

    Vanadium nitride (V-N) thin films were grown using a reactive d.c. magnetron sputtering process, from a vanadium target (99.999%) in an Ar/N 2 gas mixture at different deposition bias voltage. Films were deposited onto silicon (1 0 0) and RUS-3 steel substrates at 400 deg. C. Structural, compositional, mechanical and electrochemical characterizations were performed by X-ray diffraction (XRD), elastic forward analysis (EFA), nanoindentation, electrochemical impedance spectroscopy (EIS), and Tafel polarization curves, respectively. X-ray diffraction patterns show the presence of (1 1 1) and (2 0 0) crystallographic orientations associated to the V-N cubic phase. Nanoindentation measurements revealed that when the bias voltage increases from 0 V to -150 V the hardness and elastic modulus are increased from 11 GPa to 20 GPa and from 187 GPa to 221 GPa, respectively. EIS and Tafel curves showed that the corrosion rate of steel, coated with V-N single layer films deposited without bias voltage, diminishes 90% compared to the steel without this coating. On the other hand, when the V-N coating was deposited at the highest d.c. bias voltage (-150 V), the corrosion rate was greater than in the steel coated with zero-voltage (0 V) V-N films. This last result could be attributed to the formation of porosities produced by the ion bombardment during the deposition process.

  11. A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jamshidian, M., E-mail: jamshidian@cc.iut.ac.ir [Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstrasse 15, 99423 Weimar (Germany); Thamburaja, P., E-mail: prakash.thamburaja@gmail.com [Department of Mechanical & Materials Engineering, Universiti Kebangsaan Malaysia (UKM), Bangi 43600 (Malaysia); Rabczuk, T., E-mail: timon.rabczuk@tdt.edu.vn [Division of Computational Mechanics, Ton Duc Thang University, Ho Chi Minh City (Viet Nam); Faculty of Civil Engineering, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)

    2016-12-15

    A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.

  12. Mechanisms of growth plate maturation and epiphyseal fusion

    NARCIS (Netherlands)

    Emons, J.; Chagin, A.S.; Karperien, Hermanus Bernardus Johannes; Wit, J.M.

    2011-01-01

    Longitudinal growth occurs within the long bones at the growth plate. During childhood, the growth plate matures, its total width decreases and eventually it disappears at the end of puberty with complete replacement by bone along with cessation of longitudinal growth. The exact mechanism of

  13. Controlling thin film structure for the dewetting of catalyst nanoparticle arrays for subsequent carbon nanofiber growth

    International Nuclear Information System (INIS)

    Randolph, S J; Fowlkes, J D; Melechko, A V; Klein, K L; III, H M Meyer; Simpson, M L; Rack, P D

    2007-01-01

    Vertically aligned carbon nanofiber (CNF) growth is a catalytic chemical vapor deposition process in which structure and functionality is controlled by the plasma conditions and the properties of the catalyst nanoparticles that template the fiber growth. We have found that the resultant catalyst nanoparticle network that forms by the dewetting of a continuous catalyst thin film is dependent on the initial properties of the thin film. Here we report the ability to tailor the crystallographic texture and composition of the nickel catalyst film and subsequently the nanoparticle template by varying the rf magnetron sputter deposition conditions. After sputtering the Ni catalyst thin films, the films are heated and exposed to an ammonia dc plasma, to chemically reduce the native oxide on the films and induce dewetting of the film to form nanoparticles. Subsequent nanoparticle treatment in an acetylene plasma at high substrate temperature results in CNF growth. Evidence is presented that the texture and composition of the nickel thin film has a significant impact on the structure and composition of the formed nanoparticle, as well as the resultant CNF morphology. Nickel films with a preferred (111) or (100) texture were produced and conditions favoring interfacial silicidation reactions were identified and investigated. Both compositional and structural analysis of the films and nanoparticles indicate that the properties of the as-deposited Ni catalyst film influences the subsequent nanoparticle formation and ultimately the catalytic growth of the carbon nanofibers

  14. Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

    International Nuclear Information System (INIS)

    Miller, K.T.

    1991-01-01

    Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

  15. Mechanical and thermal properties of physically-blended-plastic films

    International Nuclear Information System (INIS)

    Abu Issa, M. S.

    1983-10-01

    Low density polyethylene (LDPE) and isotactic polypropylene (PP) blend were produced in film form and were characterized by a number of techniques such as wide-angle x-ray diffraction (WAXD), differential thermal analysis (DTA), scanning electron microscopy (SEM), and instron tensile testing. Results of WAXD and DTA showed conclusively that the two components in the blend are incompatible. SEM micrographs indicated that the 60/40 and 40/60 PP/PE blends show approximately fine homogeneous dispersion of the minor component into the matrix of the major component. The mechanical properties of the blend films improved with respect to the PE homo polymer. The improvement was more remarkable with the increase of the PP component in the blend. Results obtained in this work were explained in terms of crystallinity and the crystallite orientation. 28 refs., 29 figs., 5 tabs. (A.M.H.)

  16. Modeling of thin films growth processes in the early stage for atoms with covalent bonds

    International Nuclear Information System (INIS)

    Tupik, V A; Margolin, V I; Su, Chu Trong

    2017-01-01

    Computer simulation for obtaining thin film’s growth process at an early stage with the proposed model of atoms with isotropic and anisotropic interactions been considered. Carrying out the procedure for analyzing the problem on the basis of the program being implemented, computer simulation of thin film growth processes has been carried out on several examples. The results of computer simulation of the growth process of thin film on a given substrate and an aggregate in a vacuum condition are shown. Some characteristic distributions of the obtained structure have been carried out to evaluate the proposed adequate model and to reflect the high complexity of thin films growth process. (paper)

  17. Modification of mechanical and thermal property of chitosan-starch blend films

    Science.gov (United States)

    Tuhin, Mohammad O.; Rahman, Nazia; Haque, M. E.; Khan, Ruhul A.; Dafader, N. C.; Islam, Rafiqul; Nurnabi, Mohammad; Tonny, Wafa

    2012-10-01

    Chitosan-starch blend films (thickness 0.2 mm) of different composition were prepared by casting and their mechanical properties were studied. To improve the properties of chitosan-starch films, glycerol and mustard oil of different composition were used. Chitosan-starch films, incorporated with glycerol and mustard oil, were further modified with monomer 2-hydroxyethyl methacrylate (HEMA) using gamma radiation. The modified films showed improvement in both tensile strength and elongation at break than the pure chitosan-starch films. Water uptake of the films reduced significantly than the pure chitosan-starch film. Thermo gravimetric analysis (TGA) and dynamic mechanical analysis (DMA) showed that the modified films experience less thermal degradation than the pure films. Scanning electron microscopy (SEM) and FTIR were used to investigate the morphology and molecular interaction of the blend film, respectively.

  18. Surface morphology study on chromium oxide growth on Cr films by Nd-YAG laser oxidation process

    International Nuclear Information System (INIS)

    Dong Qizhi; Hu Jiandong; Guo Zuoxing; Lian Jianshe; Chen Jiwei; Chen Bo

    2002-01-01

    Grain sized (60-100 nm) Cr 2 O 3 thin films were prepared on Cr thin film surfaces by Nd-YAG laser photothermal oxidation process. Surface morphology study showed crack-free short plateau-like oxide films formed. Increase of dislocation density after pulsed laser irradiation was found. Thin film external surfaces, grain boundaries and dislocations are main paths of laser surface oxidation. Pinning and sealing of grain boundary was the reason that deeper oxidation did not produce. Grain growth and agglomeration of Cr sub-layer yielded tensile stress on the surface Cr 2 O 3 thin film. It was the reason that short plateau-like surface morphology formed and cracks appeared sometimes. In oxygen annealing at 700 deg. C, grain boundaries were considered not to be pinned at the surface, mixture diffusion was main mechanism in growth of oxide. Compression stress development in whole film led to extrusion of grains that was the reason that multiple appearances such as pyramid-like and nutshell-like morphology formed

  19. Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

    2011-08-31

    The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

  20. Plasticity mechanisms in ultrafine grained freestanding aluminum thin films revealed by in-situ transmission electron microscopy nanomechanical testing

    International Nuclear Information System (INIS)

    Idrissi, Hosni; Kobler, Aaron; Amin-Ahmadi, Behnam; Schryvers, Dominique; Coulombier, Michael; Pardoen, Thomas; Galceran, Montserrat; Godet, Stéphane; Raskin, Jean-Pierre; Kübel, Christian

    2014-01-01

    In-situ bright field transmission electron microscopy (TEM) nanomechanical tensile testing and in-situ automated crystallographic orientation mapping in TEM were combined to unravel the elementary mechanisms controlling the plasticity of ultrafine grained Aluminum freestanding thin films. The characterizations demonstrate that deformation proceeds with a transition from grain rotation to intragranular dislocation glide and starvation plasticity mechanism at about 1% deformation. The grain rotation is not affected by the character of the grain boundaries. No grain growth or twinning is detected

  1. Plasticity mechanisms in ultrafine grained freestanding aluminum thin films revealed by in-situ transmission electron microscopy nanomechanical testing

    Energy Technology Data Exchange (ETDEWEB)

    Idrissi, Hosni, E-mail: hosni.idrissi@ua.ac.be [EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, Place Sainte Barbe 2, B-1348 Louvain-La-Neuve (Belgium); Kobler, Aaron [Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Joint Research Laboratory Nanomaterials (KIT and TUD) at Technische Universität Darmstadt (TUD), Petersenstr. 32, 64287 Darmstadt (Germany); Amin-Ahmadi, Behnam; Schryvers, Dominique [EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Coulombier, Michael; Pardoen, Thomas [Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, Place Sainte Barbe 2, B-1348 Louvain-La-Neuve (Belgium); Galceran, Montserrat; Godet, Stéphane [Matters and Materials Department, Université Libre de Bruxelles, 50 Av. FD Roosevelt CP194/03, 1050 Brussels (Belgium); Raskin, Jean-Pierre [Information and Communications Technologies, Electronics and Applied Mathematics (ICTEAM), Microwave Laboratory, Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium); Kübel, Christian [Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology - KIT, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2014-03-10

    In-situ bright field transmission electron microscopy (TEM) nanomechanical tensile testing and in-situ automated crystallographic orientation mapping in TEM were combined to unravel the elementary mechanisms controlling the plasticity of ultrafine grained Aluminum freestanding thin films. The characterizations demonstrate that deformation proceeds with a transition from grain rotation to intragranular dislocation glide and starvation plasticity mechanism at about 1% deformation. The grain rotation is not affected by the character of the grain boundaries. No grain growth or twinning is detected.

  2. Growth of n-alkane films on a single-crystal substrate

    DEFF Research Database (Denmark)

    Wu, Z. U.; Ehrlich, S. N.; Matthies, B.

    2001-01-01

    The structure and growth mode of alkane films (n-C/sub n/H/sub 2n+2/; n=4, 6, 7) adsorbed on a Ag(111) surface have been investigated by synchrotron X-ray scattering. New models are proposed for the butane (n=4) and hexane (n=6) monolayer and butane bilayer structures. Specular reflectivity scans...... reveal that growth of all films is preempted between two and three layers by nucleation of bulk particles oriented with a single bulk crystal plane parallel to the film. In the case of butane, the bulk particles also have a fixed azimuthal relationship with the film resulting in complete epitaxy....

  3. Growth of high quality large area MgB2 thin films by reactive evaporation

    OpenAIRE

    Moeckly, Brian H.; Ruby, Ward S.

    2006-01-01

    We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials u...

  4. Tribological behavior and film formation mechanisms of carbon nanopearls

    Science.gov (United States)

    Hunter, Chad Nicholas

    Carbon nanopearls (CNPs) are amorphous carbon spheres that contain concentrically-oriented nanometer-sized graphitic flakes. Because of their spherical shape, size (˜150 nm), and structure consisting of concentrically oriented nano-sized sp2 flakes, CNPs are of interest for tribological applications, in particular for use in solid lubricant coatings. These studies were focused on investigating mechanisms of CNP lubrication, development of methods to deposit CNP onto substrates, synthesizing CNP-gold hybrid films using Matrix Assisted Pulsed Laser Evaporation (MAPLE) and magnetron sputtering, and studying plasmas and other species present during film deposition using an Electrostatic Quadrupole Plasma (EQP) analyzer. CNPs deposited onto silicon using drop casting with methanol showed good lubricating properties in sliding contacts under dry conditions, where a transfer film was created in which morphology changed from nano-sized spheres to micron-sized agglomerates consisting of many highly deformed CNPs in which the nano-sized graphene flakes are sheared from the wrapped layer structure of the CNPs. The morphology of carbon nanopearl films deposited using a MAPLE system equipped with a 248 nm KrF excimer laser source was found to be influenced by multiple factors, including composition of the matrix solvent, laser energy and repetition rate, background pressure, and substrate temperature. The best parameters for depositing CNP films that are disperse, droplet-free and have the maximum amount of material deposited are as follows: toluene matrix, 700 mJ, 1 Hz, 100°C substrate temperature, and unregulated vacuum pressure. During depositions using MAPLE and sputtering in argon, electron ionization of toluene vapor generated from the MAPLE target and charge exchange reactions between toluene vapor and the argon plasma generated by the magnetron caused carbon to be deposited onto the gold sputter target. Thin films deposited under these conditions contained high

  5. The mechanism of sputter-induced orientation change in YBCO films on MgO (001)

    International Nuclear Information System (INIS)

    Huang, Y.; Vuchic, B.V.; Baldo, P.; Merkle, K.L.; Buchholz, D.B.; Mahajan, S.; Lei, J.S.; Markworth, P.R.; Chang, R.P.H.

    1996-12-01

    The mechanisms of the sputter-induced orientation change in YBa 2 Cu 3 O 7-x (YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction. Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change

  6. Mechanism for selective growth in electrical steel

    Science.gov (United States)

    Oh, Eun Jee; Heo, Nam Hoe; Kwon, Se Kyun; Koo, Yang Mo

    2018-01-01

    Through the competitive selective growth process between {100}, {110}, and {111} grains during final annealing which is governed by the primary grain size and the surface segregation concentration of sulfur, the sharp {110} annealing texture can be developed in a C-and Al-free Fe-3%Si-0.1%Mn electrical steel. Generally, the selective growth of the {110} grains occurs actively under the low surface segregation concentration of sulfur. In spite of the surface energy disadvantage, the selective growth of a {hkl} grain can however occur, if the {hkl} grain size is larger than the critical grain size linearly proportional to the strip thickness.

  7. 2010 Thin Film & Small Scale Mechanical Behavior Gordon Research Conference

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Thomas Balk

    2010-07-30

    Over the past decades, it has been well established that the mechanical behavior of materials changes when they are confined geometrically at least in one dimension to small scale. It is the aim of the 2010 Gordon Conference on 'Thin Film and Small Scale Mechanical Behavior' to discuss cutting-edge research on elastic, plastic and time-dependent deformation as well as degradation mechanisms like fracture, fatigue and wear at small scales. As in the past, the conference will benefit from contributions from fundamental studies of physical mechanisms linked to material science and engineering reaching towards application in modern applications ranging from optical and microelectronic devices and nano- or micro-electrical mechanical systems to devices for energy production and storage. The conference will feature entirely new testing methodologies and in situ measurements as well as recent progress in atomistic and micromechanical modeling. Particularly, emerging topics in the area of energy conversion and storage, such as material for batteries will be highlighted. The study of small-scale mechanical phenomena in systems related to energy production, conversion or storage offer an enticing opportunity to materials scientists, who can provide new insight and investigate these phenomena with methods that have not previously been exploited.

  8. Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

    Science.gov (United States)

    Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

    2013-09-01

    Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

  9. Advances in the understanding of crystal growth mechanisms

    CERN Document Server

    Nishinaga, T; Harada, J; Sasaki, A; Takei, H

    1997-01-01

    This book contains the results of a research project entitled Crystal Growth Mechanisms on an Atomic Scale, which was carried out for 3 years by some 72 reseachers. Until recently in Japan, only the technological aspects of crystal growth have been emphasized and attention was paid only to its importance in industry. However the scientific aspects also need to be considered so that the technology of crystal growth can be developed even further. This project therefore aimed at understanding crystal growth and the emphasis was on finding growth mechanisms on an atomic scale.

  10. Mechanical design problems associated with turbopump fluid film bearings

    Science.gov (United States)

    Evces, Charles R.

    1990-01-01

    Most high speed cryogenic turbopumps for liquid propulsion rocket engines currently use ball or roller contact bearings for rotor support. The operating speeds, loads, clearances, and environments of these pumps combine to make bearing wear a limiting factor on turbopump life. An example is the high pressure oxygen turbopump (HPOTP) used in the Space Shuttle Main Engine (SSME). Although the HPOTP design life is 27,000 seconds at 30,000 rpms, or approximately 50 missions, bearings must currently be replaced after 2 missions. One solution to the bearing wear problem in the HPOTP, as well as in future turbopump designs, is the utilization of fluid film bearings in lieu of continuous contact bearings. Hydrostatic, hydrodynamic, and damping seal bearings are all replacement candidates for contact bearings in rocket engine high speed turbomachinery. These three types of fluid film bearings have different operating characteristics, but they share a common set of mechanical design opportunities and difficulties. Results of research to define some of the mechanical design issues are given. Problems considered include transient strat/stop rub, non-operational rotor support, bearing wear inspection and measurement, and bearing fluid supply route. Emphasis is given to the HPOTP preburner pump (PBP) bearing, but the results are pertinent to high-speed cryogenic turbomachinery in general.

  11. Three-dimensional growth simulation: A study of substrate oriented films

    International Nuclear Information System (INIS)

    Besnard, A; Martin, N; Carpentier, L

    2010-01-01

    Monte Carlo simulations are developed to simulate the growth of three-dimensional columnar microstructure in thin films. We are studying in particular oriented microstructure like those produced with the Glancing Angle Deposition technique (GLAD). Some geometrical characteristics of the particles flux, the organization of defect sites on the substrate surface and the atomic surface diffusion are mainly investigated in order to predict the growth processes and the resulting features of the films. This study reports on simulations of thin film growth exhibiting an oblique and zigzag columnar microstructure. Column angle evolution and density are investigated versus incidence angle α or period number n and compared with experimental measurements.

  12. Modeling of metal thin film growth: Linking angstrom-scale molecular dynamics results to micron-scale film topographies

    Science.gov (United States)

    Hansen, U.; Rodgers, S.; Jensen, K. F.

    2000-07-01

    A general method for modeling ionized physical vapor deposition is presented. As an example, the method is applied to growth of an aluminum film in the presence of an ionized argon flux. Molecular dynamics techniques are used to examine the surface adsorption, reflection, and sputter reactions taking place during ionized physical vapor deposition. We predict their relative probabilities and discuss their dependence on energy and incident angle. Subsequently, we combine the information obtained from molecular dynamics with a line of sight transport model in a two-dimensional feature, incorporating all effects of reemission and resputtering. This provides a complete growth rate model that allows inclusion of energy- and angular-dependent reaction rates. Finally, a level-set approach is used to describe the morphology of the growing film. We thus arrive at a computationally highly efficient and accurate scheme to model the growth of thin films. We demonstrate the capabilities of the model predicting the major differences on Al film topographies between conventional and ionized sputter deposition techniques studying thin film growth under ionized physical vapor deposition conditions with different Ar fluxes.

  13. Direct growth of superconducting NdFeAs(O,F) thin films by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Chihara, Masashi, E-mail: chihara@iku.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Sumiya, Naoki; Arai, Kenta [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, Yokosuka-shi, Kanagawa 240-0101 (Japan); Hatano, Takafumi; Iida, Kazumasa; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-11-15

    Highlights: • Highly textured NdFeAs(O,F) thin films were obtained by a direct growth method. • Enhancing the migration was crucial to realize the direct growth. • The critical current density exceeded 3 MA/cm{sup 2} at self-field and 1 MA/cm{sup 2} at 9 T. • A two-dimensional growth was confirmed by the observation of surface morphology. - Abstract: We report on the growth of NdFeAs(O,F) superconducting thin films by molecular beam epitaxy without having a NdOF secondary layer that was necessary for fluorine doping in our previous studies. The key to realizing the direct growth of a superconducting film was the enhancement of migration of the raw materials on the substrate, which was accomplished by two steps. Firstly, we increased the growth temperature that improved the crystalline quality of parent NdFeAsO thin films. Secondly, the atmosphere in the chamber during the growth was improved by changing the crucible material of the Fe source cell. Highly textured NdFeAs(O,F) thin films with critical temperatures up to 50 K were obtained, and terraces were observed by atomic force microscope, indicating a two-dimensional growth. However, precipitates were also found on the surface, which suggests that enhancing further the migration is necessary for obtaining a NdFeAs(O,F) thin film with a better quality.

  14. Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

    2008-07-01

    Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

  15. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

    2006-07-15

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

  16. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    International Nuclear Information System (INIS)

    Xue Wenbin

    2006-01-01

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

  17. Composite Films Formed by Cellulose nanocrystals and Latex Nanoparticles: Optical, Structural, and Mechanical Properties

    Science.gov (United States)

    Vollick, Brandon McRae

    This thesis describes the preparation of iridescent, birefringent, composite films composed of cellulose nanocrystals (CNCs), latex nanoparticles (NPs) and a NP crosslinker; hexanediamine (HDA). First, aqueous suspensions were prepared with varying quantities of CNCs, NPs and HDA before equilibrating for one week. The cholesteric (Ch) phase was then cast and dried into a film. The optical, structural and mechanical properties of the film was analyzed. Second, films with identical compositions of CNCs, NPs, and HDA were fabricated in three different ways to yield films of different morphology, (i) fast drying of an isotropic suspension, yielding an isotropic film, (ii) slow drying of an isotropic suspension, yielding a partially Ch films, (iii) slow drying of an equilibrated suspension, yielding a highly Ch film. The optical and mechanical properties of the films was analyzed.

  18. Effects of film polarities on InN growth by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Xu, K.; Yoshikawa, A.

    2003-01-01

    Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

  19. Modeling and analysis of film composition on mechanical properties of maize starch based edible films.

    Science.gov (United States)

    Prakash Maran, J; Sivakumar, V; Thirugnanasambandham, K; Kandasamy, S

    2013-11-01

    The present study investigates the influence of composition (content of maize starch (1-3 g), sorbitol (0.5-1.0 ml), agar (0.5-1.0 g) and tween-80 (0.1-0.5 ml)) on the mechanical properties (tensile strength, elongation, Young's modulus, puncture force and puncture deformation) of the maize starch based edible films using four factors with three level Box-Behnken design. The edible films were obtained by casting method. The results showed that, tween-80 increases the permeation of sorbitol in to the polymer matrix. Increasing concentration of sorbitol (hydrophilic nature and plasticizing effect of sorbitol) decreases the tensile strength, Young's modulus and puncture force of the films. The results were analyzed by Pareto analysis of variance (ANOVA) and second order polynomial models were obtained for all responses with high R(2) values (R(2)>0.95). 3D response surface plots were constructed to study the relationship between process variables and the responses. Copyright © 2013 Elsevier B.V. All rights reserved.

  20. Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

    Science.gov (United States)

    Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

    2015-09-15

    Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

  1. Preparation and mechanical properties of edible rapeseed protein films.

    Science.gov (United States)

    Jang, Sung-Ae; Lim, Geum-Ok; Song, Kyung Bin

    2011-03-01

    Edible films were manufactured from rapeseed oil extraction residues. To prepare rapeseed protein (RP) films, various concentrations of plasticizers and emulsifiers were incorporated into the preparation of a film-forming solution. The optimal conditions for the preparation of the RP film were 2% sorbitol/0.5% sucrose as plasticizer and 1.5% polysorbate 20 as an emulsifier. In addition, RP blend films were prepared. Gelidium corneum or gelatin was added to improve the physical properties of the RP film, and the highest tensile strength value of the films was 53.45 MPa for the 3% RP/4% gelatin film. Our results suggest that the RP-gelatin blend film is suitable for applications in food packaging. Edible RP films prepared in the present investigation can be applied in food packaging.

  2. Growth of α-sexithiophene nanostructures on C60 thin film layers

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Madsen, Morten; Balzer, Frank

    2014-01-01

    Organic molecular beam grown -sexithiophene (-6T) forms nanostructured thin films on buckminsterfullerene (C60) thin film layers. At substrate temperatures of 300K during growth a rough continuous film is observed, which develop to larger elongated islands and dendritic- as well as needle like ...... fluorescence polarimetry measurements the in-plane orientation of the crystalline sites within the needle like structures is determined. The polarimetry investigations strongly indicate that the needle like structures consist of lying molecules....

  3. Heteroepitaxial silicon film growth at 600 oC from an Al-Si eutectic melt

    International Nuclear Information System (INIS)

    Chaudhari, P.; Shim, Heejae; Wacaser, Brent A.; Reuter, Mark C.; Murray, Conal; Reuter, Kathleen B.; Jordan-Sweet, Jean; Ross, Frances M.; Guha, Supratik

    2010-01-01

    A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 o C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 o C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications.

  4. Growth of graphene films from non-gaseous carbon sources

    Science.gov (United States)

    Tour, James; Sun, Zhengzong; Yan, Zheng; Ruan, Gedeng; Peng, Zhiwei

    2015-08-04

    In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

  5. Growth of fine holes in polyethyleneterephthalate film irradiated by fission fragments

    International Nuclear Information System (INIS)

    Komaki, Y.; Tsujimura, S.

    1975-01-01

    Growth of fine holes by chemical etching in polyethyleneterephthalate films exposed to fission fragments were followed by measuring gas flow through films. The etching rate along tracks and the radial etching rate were determined at hole diameters of 100--3000 A and hole densities of 10 6 --10 8 /cm 2

  6. Growth-temperature-dependent optical and acetone detection properties of ZnO thin films

    International Nuclear Information System (INIS)

    Shewale, P. S.; Yu, Y. S.

    2015-01-01

    Zinc oxide (ZnO) thin films were prepared onto glass substrates at moderately low growth temperature by two-stage spray pyrolysis technique. The effects of growth temperature on structural, optical and acetone detection properties were investigated with X-ray diffractometry, a UV–visible spectrophotometer, photoluminescence (PL) spectroscopy and a homemade gas sensor testing unit, respectively. All the films are polycrystalline with a hexagonal wurtzite phase and exhibit a preferential orientation along [002] direction. The film crystallinity is gradually enhanced with an increase in growth temperature. The optical measurements show that all the films are physically highly transparent with a transmittance greater than 82% in the visible range. The band gap of the film is observed to exhibit a slight red shift with an increasing growth temperature. The PL studies on the films show UV/violet PL band at ∼ 395 nm. Among all the films investigated, the film deposited at 250 °C demonstrates a maximum sensitivity of 13% towards 20 ppm of acetone vapors at 300 °C operating temperature. (paper)

  7. Mechanical growth and morphogenesis of seashells

    KAUST Repository

    Moulton, D.E.; Goriely, A.; Chirat, R.

    2012-01-01

    . However, the developmental mechanisms underlying shell coiling are largely not understood and the ubiquitous presence of ornamentation such as ribs, tubercles, or spines presents yet another level of difficulty. Here we develop a general model for shell

  8. Effects of thermal treatment on the anodic growth of tungsten oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Chai, Y., E-mail: yqchai85@gmail.com; Tam, C.W.; Beh, K.P.; Yam, F.K.; Hassan, Z.

    2015-08-03

    This work reports the investigation of the effects of thermal treatment on anodic growth tungsten oxide (WO{sub 3}). The increase of the thermal treatment temperature above 400 °C significantly influences WO{sub 3} film where high porosity structure reduces to more compact film. As-grown film is amorphous, which transforms to monoclinic/orthorhombic phase upon annealing at 300–600 °C. With the reducing of porous structure, preferential growth of (002) plane shifts to (020) plane at 600 °C with more than twentyfold increase of peak's intensity compared to the film annealed at 500 °C. Films annealed at low thermal treatment show better ion intercalation and reversibility during electrochemical measurements; however, it has larger optical band gap. Photoelectrochemical measurement reveals that film annealed at 400 °C exhibits the best photocatalytic performance among the films annealed at 300–600 °C. - Highlights: • Porosity of the WO{sub 3} reduces as annealing temperature increases above 400 °C. • As-grown film is amorphous which transforms to monoclinic/orthorhombic upon annealing. • As-grown film shows better ion intercalation in electrochemical process. • Optical band gap of WO{sub 3} reduces as the annealing temperature increases. • Film annealed at 400 °C exhibits best photocatalytic performance.

  9. Factors affecting the growth of the Malawian film industry | Magalasi ...

    African Journals Online (AJOL)

    Journal of Development and Communication Studies ... This article attempts to ask some of the most basic questions about the practice of film making in Malawi on who, what, and how films have been created, tracing the history of cinema from the British Colonial practice, through Kamuzu Banda's reign to the present.

  10. Antimicrobial and physical-mechanical properties of agar-based films incorporated with grapefruit seed extract.

    Science.gov (United States)

    Kanmani, Paulraj; Rhim, Jong-Whan

    2014-02-15

    The use of synthetic petroleum based packaging films caused serious environmental problems due to their difficulty in recycling and poor biodegradability. Therefore, present study was aimed to develop natural biopolymer-based antimicrobial packaging films as an alternative for the synthetic packaging films. As a natural antimicrobial agent, grapefruit seed extract (GSE) has been incorporated into agar to prepare antimicrobial packaging film. The films with different concentrations of GSE were prepared by a solvent casting method and the resulting composite films were examined physically and mechanically. In addition, the films were characterized by FE-SEM, XRD, FT-IR and TGA. The incorporation of GSE caused increase in color, UV barrier, moisture content, water solubility and water vapor permeability, while decrease in surface hydrophobicity, tensile strength and elastic modulus of the films. As the concentration of GSE increased from 0.6 to 13.3 μg/mL, the physical and mechanical properties of the films were affected significantly. The addition of GSE changed film microstructure of the film, but did not influence the crystallinity of agar and thermal stability of the agar-based films. The agar/GSE films exhibited distinctive antimicrobial activity against three test food pathogens, such as Listeria monocytogenes, Bacillus cereus and Escherichia coli. These results suggest that agar/GSE films have potential to be used in an active food packaging systems for maintaining food safety and extending the shelf-life of the packaged food. Copyright © 2013 Elsevier Ltd. All rights reserved.

  11. Fabrication and mechanical characterization of biodegradable and synthetic polymeric films: Effect of gamma radiation

    International Nuclear Information System (INIS)

    Akter, Nousin; Khan, Ruhul A.; Salmieri, Stephane; Sharmin, Nusrat; Dussault, Dominic; Lacroix, Monique

    2012-01-01

    Chitosan (1 wt%, in 2% aqueous acetic acid solution) and starch (1 wt%, in deionised water) were dissolved and mixed in different proportions (20–80 wt% chitosan) then films were prepared by casting. Tensile strength and elongation at break of the 50% chitosan containing starch-based films were found to be 47 MPa and 16%, respectively. It was revealed that with the increase of chitosan in starch, the values of TS improved significantly. Monomer, 2-butane diol-diacrylate (BDDA) was added into the film forming solutions (50% starch-based), then casted films. The BDDA containing films were irradiated under gamma radiation (5–25 kGy) and it was found that strength of the films improved significantly. On the other hand, synthetic petroleum-based polymeric films (polycaprolactone, polyethylene and polypropylene) were prepared by compression moulding. Mechanical and barrier properties of the films were evaluated. The gamma irradiated (25 kGy) films showed higher strength and better barrier properties. - Highlights: ► Chitosan and starch-based biodegradable films were prepared by casting. ► With the increase of chitosan in starch, the strength of the films improved significantly. ► Monomer, 2-Butane diol-diacrylate was grafted with the films by gamma radiation. ► Mechanical properties of synthetic polymeric films improved by gamma radiation. ► The irradiated polymer films showed better water vapor barrier properties.

  12. Effect of power on the growth of nanocrystalline silicon films

    International Nuclear Information System (INIS)

    Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma

    2008-01-01

    Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm -1 and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity

  13. Effect of power on the growth of nanocrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sushil; Dixit, P N; Rauthan, C M S; Parashar, A; Gope, Jhuma [Plasma Processed Materials Group, National Physical Laboratory, Dr K S Krishnan Road, New Delhi 110 012 (India)], E-mail: skumar@mail.nplindia.ernet.in

    2008-08-20

    Nanocrystalline silicon thin films were grown using a gaseous mixture of silane, hydrogen and argon in a plasma-enhanced chemical vapor deposition system. These films were deposited away from the conventional low power regime normally used for the deposition of device quality hydrogenated amorphous silicon films. It was observed that, with the increase of applied power, there is a change in nanocrystalline phases which were embedded in the amorphous matrix of silicon. Atomic force microscopy micrographs show that these films contain nanocrystallite of 20-100 nm size. Laser Raman and photoluminescence peaks have been observed at 514 cm{sup -1} and 2.18 eV, respectively, and particle sizes were estimated using the same as 8.24 nm and 3.26 nm, respectively. It has also been observed that nanocrystallites in these films enhanced the optical bandgap and electrical conductivity.

  14. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  15. Portraying mechanics of plant growth promoting rhizobacteria (PGPR: A review

    Directory of Open Access Journals (Sweden)

    Dweipayan Goswami

    2016-12-01

    Full Text Available Population growth and increase in food requirement is the global problem. It is inevitable to introduce new practices that help to increase agricultural productivity. Use of plant growth promoting rhizobacteria (PGPR has shown potentials to be a promising technique in the practice of sustainable agriculture. A group of natural soil microbial flora acquire dwelling in the rhizosphere and on the surface of the plant roots which impose beneficial effect on the overall well-being of the plant are categorized as PGPR. Researchers are actively involved in understanding plant growth promoting mechanics employed by PGPR. Broadly, these are divided into direct and indirect mechanics. Any mechanism that directly enhances plant growth either by providing nutrients or by producing growth regulators are portrayed as direct mechanics. Whereas, any mechanisms that protects plant from acquiring infections (biotic stress or helps plant to grow healthily under environmental stresses (abiotic stress are considered indirect mechanics. This review is focused to describe cogent mechanics employed by PGPR that assists plant to sustain healthy growth. Also, we emphasized on the PGPR-based products which have been commercially developed exploiting these mechanics of PGPR.

  16. Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

    International Nuclear Information System (INIS)

    Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

    1999-01-01

    Silicon oxynitride (SiO x N y ) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

  17. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  18. Gas Permeation, Mechanical Behavior and Cytocompatibility of Ultrathin Pure and Doped Diamond-Like Carbon and Silicon Oxide Films

    Directory of Open Access Journals (Sweden)

    Juergen M. Lackner

    2013-12-01

    Full Text Available Protective ultra-thin barrier films gather increasing economic interest for controlling permeation and diffusion from the biological surrounding in implanted sensor and electronic devices in future medicine. Thus, the aim of this work was a benchmarking of the mechanical oxygen permeation barrier, cytocompatibility, and microbiological properties of inorganic ~25 nm thin films, deposited by vacuum deposition techniques on 50 µm thin polyetheretherketone (PEEK foils. Plasma-activated chemical vapor deposition (direct deposition from an ion source was applied to deposit pure and nitrogen doped diamond-like carbon films, while physical vapor deposition (magnetron sputtering in pulsed DC mode was used for the formation of silicon as well as titanium doped diamond-like carbon films. Silicon oxide films were deposited by radio frequency magnetron sputtering. The results indicate a strong influence of nanoporosity on the oxygen transmission rate for all coating types, while the low content of microporosity (particulates, etc. is shown to be of lesser importance. Due to the low thickness of the foil substrates, being easily bent, the toughness as a measure of tendency to film fracture together with the elasticity index of the thin films influence the oxygen barrier. All investigated coatings are non-pyrogenic, cause no cytotoxic effects and do not influence bacterial growth.

  19. Growth mechanisms, polytypism, and real structure of kaolinite microcrystals

    International Nuclear Information System (INIS)

    Samotoin, N. D.

    2008-01-01

    The mechanisms of growth of kaolinite microcrystals (0.1-5.0 μm in size) at deposits related to the cluvial weathering crust, as well as to the low-temperature and medium-temperature hydrothermal processes of transformations of minerals in different rocks in Russia, Kazakhstan, Ukraine, Czechia, Vietnam, India, Cuba, and Madagascar, are investigated using transmission electron microscopy and vacuum decoration with gold. It is established that kaolinite microcrystals grow according to two mechanisms: the mechanism of periodic formation of two-dimensional nuclei and the mechanism of spiral growth. The spiral growth of kaolinite microcrystals is dominant and occurs on steps of screw dislocations that differ in sign and magnitude of the Burgers vector along the c axis. The layered growth of kaolinite originates from a widespread source in the form of a step between polar (+ and -) dislocations, i.e., a growth analogue of the Frank-Read dislocation source. The density of growth screw dislocations varies over a wide range and can be as high as ∼10 9 cm -2 . Layered stepped kaolinite growth pyramids for all mechanisms of growth on the (001) face of kaolinite exhibit the main features of the triclinic 1Tc and real structures of this mineral.

  20. Mechanisms of pancreatic beta-cell growth and regeneration

    DEFF Research Database (Denmark)

    Nielsen, Jens Høiriis

    1989-01-01

    Information about the mechanism of beta-cell growth and regeneration may be obtained by studies of insulinoma cells. In the present study the growth and function of the rat insulinoma cell lines RINm5F and 5AH were evaluated by addition of serum, hormones, and growth factors. It was found...... of insulin mRNA content showed that the insulinoma cells only contained about 2% of that of normal rat beta-cells. These results are discussed in relation to the role of growth factors, oncogenes, and differentiation in the growth and regeneration of beta-cells....... that transferrin is the only obligatory factor whereas growth hormone, epidermal growth factor, fibroblast growth factor, and TRH had modulating effects. A heat-labile heparin binding serum factor which stimulated thymidine incorporation but not cell proliferation was demonstrated in human serum. Measurements...

  1. The study of thin film growth by using Monte Carlo method

    International Nuclear Information System (INIS)

    Tandogan, M.; Aktas, S.

    2010-01-01

    Thin film growth was studied by using Monte Carlo simulation method. Three basic models were used in this study. Model A, the gas particles used for the formation of film were under no external effects until they stick on the surface or to another particle which already stickled on the surface to form the film. Model B, gases were drifted towards the surface by an external agent. Model C, where the gas particles in the closed container were always distributed uniformly throughout the container while they are in gas state. The simulations revealed the fact that for an ideal thin film growth Model C gave the best result to prepare a thin film while a thicker but a better quality could be obtained by Model B.

  2. Growth and Analysis of Highly Oriented (11n) BCSCO Films for Device Research

    Science.gov (United States)

    Raina, K. K.; Pandey, R. K.

    1995-01-01

    Films of BCSCO superconductor of the type Bi2CaSr2Cu2O(x), have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (greater than 860 C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values, zero resistance (T(sab co)) and critical current density obtained are 87 K and 10(exp 5) A/sq cm respectively.

  3. Growth and analysis of highly oriented (11n) BCSCO films for device research

    International Nuclear Information System (INIS)

    Raina, K.K.; Pandey, R.K.

    1994-01-01

    Films of BCSCO superconductor of the type Bi 2 CaSr 2 Cu 2 O x have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO 3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 degrees C) of Bi 2 CaSr 2 Cu 2 O 8 . Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (>860 degrees C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO 3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi 2 CaSr 2 Cu 2 O 8 phase films on (001) NdGaO 3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO 3 substrate orientation. The best values of zero resistance (T co ) and critical current density obtained are 87 K and 10 5 A/cm 2 , respectively

  4. Morphological, mechanical, barrier and properties of films based on acetylated starch and cellulose from barley.

    Science.gov (United States)

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Biduski, Bárbara; Evangelho, Jarine Amaral do; Bruni, Graziella Pinheiro; Antunes, Mariana Dias; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2017-01-01

    Biodegradable films of native or acetylated starches with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. The tensile strength of the acetylated starch film was lower than those of the native starch film, without fibers. The addition of fibers increased the tensile strength and decreased the elongation and the moisture of native and acetylated starches films. The acetylated starch film showed higher water solubility when compared to native starch film. The addition of cellulose fibers reduced the water solubility of the acetylated starch film. The films reinforced with cellulose fiber exhibited a higher initial decomposition temperature and thermal stability. The mechanical, barrier, solubility, and thermal properties are factors which direct the type of the film application in packaging for food products. The films elaborated with acetylated starches of low degree of substitution were not effective in a reduction of the water vapor permeability. The addition of the cellulose fiber in acetylated and native starches films can contribute to the development of more resistant films to be applied in food systems that need to maintain their integrity. © 2016 Society of Chemical Industry. © 2016 Society of Chemical Industry.

  5. THE DEVELOPMENT OF THE MECHANICS OF FILM RATING.

    Science.gov (United States)

    HANDY, RICKI; AND OTHERS

    A TRANSCRIPTION WAS MADE OF A GROUP DISCUSSION DEALING WITH THE DEVELOPMENT OF RATING SCALES AND THE TECHNIQUES OF FILM RATING AND OF USE OF THE EQUIPMENT. THE AMIDON-FLANDERS INTERACTION ANALYSIS SCALE WAS USED AS THE BASIS FOR THE DEVELOPMENT OF THE FILM ANALYSIS OF INTERACTION RECORD (FAIR). DISCUSSIONS DEALT WITH SUCH PROBLEMS OF FILM RATING…

  6. Structural, mechanical, and magnetic properties of GaFe{sub 3}N thin films

    Energy Technology Data Exchange (ETDEWEB)

    Junaid, Muhammad, E-mail: junaid@mch.rwth-aachen.de; Music, Denis, E-mail: music@mch.rwth-aachen.de; Hans, Marcus; Schneider, Jochen M. [Materials Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Scholz, Tanja; Dronskowski, Richard [Institute of Inorganic Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Primetzhofer, Daniel [Department of Physics and Astronomy, Uppsala University, Lägerhyddsvägen 1, S-75120 Uppsala (Sweden)

    2016-07-15

    Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe{sub 3}N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe{sub 3}N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe{sub 3}N films at a temperature of 500 °C. Those thin films exhibit a lattice parameter of 3.794 Å and an elastic modulus of 226 ± 20 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.0 ± 0.1 K. The nearly saturated magnetic moment at ±5 T is about 1.6 μB/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 μB/Fe).

  7. Structural, mechanical, and magnetic properties of GaFe_3N thin films

    International Nuclear Information System (INIS)

    Junaid, Muhammad; Music, Denis; Hans, Marcus; Schneider, Jochen M.; Scholz, Tanja; Dronskowski, Richard; Primetzhofer, Daniel

    2016-01-01

    Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe_3N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe_3N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe_3N films at a temperature of 500 °C. Those thin films exhibit a lattice parameter of 3.794 Å and an elastic modulus of 226 ± 20 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.0 ± 0.1 K. The nearly saturated magnetic moment at ±5 T is about 1.6 μB/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 μB/Fe).

  8. Structural and mechanical properties of ZrSiN thin films prepared by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Freitas, F.G.R.; Conceicao, A.G.S.; Vitoria, E.R.; Carvalho, R.G.; Tentardini, E.K.; Hübler, R.; Soares, G.

    2014-01-01

    Zirconium silicon nitride (ZrSiN) thin films were deposited by reactive magnetron sputtering in order to verify the silicon influence on coating morphology and mechanical properties. The Si/(Zr+Si) ratio was adjusted between 0 to 14.5% just modifying the power applied on the silicon target. Only peaks associated to ZrN crystalline structure were observed in XRD analysis, since Si_3N_4 phase was amorphous. All samples have (111) preferred orientation, but there is a peak intensity reduction and a broadening increase for the sample with the highest Si/(Zr+Si) ratio (14.5%), demonstrating a considerable loss of crystallinity or grain size reduction (about 8 nm calculated by Scherrer). It was also observed that the texture coefficient for (200) increases with silicon addition. Chemical composition and thickness of the coatings were determined by RBS analysis. No significant changes in nano hardness with increasing Si content were found. The thin film morphology observed by SEM presents columnar and non columnar characteristics. The set of results suggests that Si addition is restricting the columnar growth of ZrN thin films. This conclusion is justified by the fact that Si contributes to increase the ZrN grains nucleation during the sputtering process. (author)

  9. BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration

    Science.gov (United States)

    Hara, Kosuke O.; Yamamoto, Chiaya; Yamanaka, Junji; Arimoto, Keisuke; Nakagawa, Kiyokazu; Usami, Noritaka

    2018-04-01

    Thermal evaporation is a simple and rapid method to fabricate semiconducting BaSi2 films. In this study, to elucidate the BaSi2 formation mechanism, the microstructure of a BaSi2 epitaxial film fabricated by thermal evaporation has been investigated by transmission electron microscopy. The BaSi2 film is found to consist of three layers with different microstructural characteristics, which is well explained by assuming two stages of film deposition. In the first stage, BaSi2 forms through the diffusion of Ba atoms from the deposited Ba-rich film to the Si substrate while in the second stage, the mutual diffusion of Ba and Si atoms in the film leads to BaSi2 formation. On the basis of the BaSi2 formation mechanism, two issues are addressed. One is the as-yet unclarified reason for epitaxial growth. It is found important to quickly form BaSi2 in the first stage for the epitaxial growth of upper layers. The other issue is the high oxygen concentration in BaSi2 films around the BaSi2-Si interface. Two routes of oxygen incorporation, i.e., oxidation of the Si substrate surface and initially deposited Ba-rich layer by the residual gas, are identified. On the basis of this knowledge, oxygen concentration is decreased by reducing the holding time of the substrate at high temperatures and by premelting of the source. In addition, X-ray diffraction results show that the decrease in oxygen concentration can lead to an increased proportion of a-axis-oriented grains.

  10. Mechanical properties of ultra thin metallic films revealed by synchrotron techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Patric Alfons

    2007-07-20

    A prerequisite for the study of the scaling behavior of mechanical properties of ultra thin films is a suitable testing technique. Therefore synchrotron-based in situ testing techniques were developed and optimized in order to characterize the stress evolution in ultra thin metallic films on compliant polymer substrates during isothermal tensile tests. Experimental procedures for polycrystalline as well as single crystalline films were established. These techniques were used to systematically investigate the influence of microstructure, film thickness (20 to 1000 nm) and temperature (-150 to 200 C) on the mechanical properties. Passivated and unpassivated Au and Cu films as well as single crystalline Au films on polyimide substrates were tested. Special care was also dedicated to the microstructural characterization of the samples which was very important for the correct interpretation of the results of the mechanical tests. Down to a film thickness of about 100 to 200 nm the yield strength increased for all film systems (passivated and unpassivated) and microstructures (polycrystalline and singlecrystalline). The influence of different interfaces was smaller than expected. This could be explained by a dislocation source model based on the nucleation of perfect dislocations. For polycrystalline films the film thickness as well as the grain size distribution had to be considered. For smaller film thicknesses the increase in flow stress was weaker and the deformation behavior changed because the nucleation of perfect dislocations became unfavorable. Instead, the film materials used alternative mechanisms to relieve the high stresses. For regular and homogeneous deformation the total strain was accommodated by the nucleation and motion of partial dislocations. If the deformation was localized due to initial cracks in a brittle interlayer or local delamination, dislocation plasticity was not effective enough to relieve the stress concentration and the films showed

  11. Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Lee, J. H.; Ke, X.; Misra, R.; Schiffer, P.; Ihlefeld, J. F.; Mei, Z. G.; Liu, Z. K.; Xu, X. S.; Musfeldt, J. L.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.

    2010-01-01

    We have developed the means to grow BiMnO 3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO 3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 deg. ). Optical absorption measurements reveal that BiMnO 3 has a direct band gap of 1.1±0.1 eV.

  12. Curaua and eucalyptus nanofibers films by continuous casting: Mechanical and thermal properties.

    Science.gov (United States)

    Claro, Pedro Ivo Cunha; Corrêa, Ana Carolina; de Campos, Adriana; Rodrigues, Vanessa Bolzan; Luchesi, Bruno Ribeiro; Silva, Luiz Eduardo; Mattoso, Luiz Henrique Capparelli; Marconcini, José Manoel

    2018-02-01

    A wide variety of new green materials such as curaua leaf fibers (CLFs) has potential applications in nanotechnology. This study aims to investigate the thermomechanical properties and morphological structure of cellulose nanocrystals (CNCs) and cellulose nanofibrils (CNFs) films obtained by continuous casting. The CNCs were obtained by acid hydrolysis and CNFs by mechanical shearing from bleached CLFs and eucalyptus pulp. The morphology after continuous casting resulted in oriented nanofibers, and as a consequence there was mechanical anisotropy. CNCs films showed the greatest values of tensile strength (36±4MPa) and the more effective fibrillation provided better mechanical strength of eucalyptus CNFs films than curaua CNFs films. Sulfur groups and mechanical shear degradation affected the stability of CNCs and CNFs films, respectively. Thus, the type of nanostructure, the way they interact to each other, the cellulose source and the process interfere significantly on the properties of the films. Copyright © 2017 Elsevier Ltd. All rights reserved.

  13. Co-depositing Sn controls the growth of Al films as surfactant

    International Nuclear Information System (INIS)

    Barna, P. B.; Kovacs, A.; Misjak, F.; Eisenmenger-Sittner, C.; Bangert, H.; Tomastik, C.

    2002-01-01

    The present study investigates the influence of co-deposited Sn on the atomic processes involved in the structure evolution of vapour-deposited Al films. The films were prepared in HV by thermal evaporation from W sources at 1600 C substrate temperature either on Si wafers covered by a thermally grown oxide or on air cleaved mica. By applying the half-shadow technique, pure and Sn-doped Al films could be deposited simultaneously. The samples were investigated by AFM, scanning AES, X-TEM as well as by X-ray diffraction methods. The grain growth of Al is promoted by Sn in all stages of the film formation. Scanning AES measurements prove the existence of a wetting Sn layer both on the surface of Al islands and on the surface of the continuos Al layer. Excess Sn forms islands on the growth surface. The surface of pure Al layers exhibits grain boundary grooves and bunches of growth steps around terraces, while that of the Sn doped layers is more rounded. The substrate-film interface was covered by a thin Sn layer. AES measurements also prove the presence of Sn on the growth surface of Al films even after termination of Sn addition. Results of these experiments indicate that during co-deposition of Al and Sn the impinging Al atoms penetrate the wetting layer and are incorporated into the already existing Al crystals. A model has been developed for describing the growth of Al crystals in the presence Sn. (Authors)

  14. Centimetre-scale micropore alignment in oriented polycrystalline metal-organic framework films via heteroepitaxial growth.

    Science.gov (United States)

    Falcaro, Paolo; Okada, Kenji; Hara, Takaaki; Ikigaki, Ken; Tokudome, Yasuaki; Thornton, Aaron W; Hill, Anita J; Williams, Timothy; Doonan, Christian; Takahashi, Masahide

    2017-03-01

    The fabrication of oriented, crystalline films of metal-organic frameworks (MOFs) is a critical step toward their application to advanced technologies such as optics, microelectronics, microfluidics and sensing. However, the direct synthesis of MOF films with controlled crystalline orientation remains a significant challenge. Here we report a one-step approach, carried out under mild conditions, that exploits heteroepitaxial growth for the rapid fabrication of oriented polycrystalline MOF films on the centimetre scale. Our methodology employs crystalline copper hydroxide as a substrate and yields MOF films with oriented pore channels on scales that primarily depend on the dimensions of the substrate. To demonstrate that an anisotropic crystalline morphology can translate to a functional property, we assembled a centimetre-scale MOF film in the presence of a dye and showed that the optical response could be switched 'ON' or 'OFF' by simply rotating the film.

  15. Preventing bacterial growth on implanted device with an interfacial metallic film and penetrating X-rays.

    Science.gov (United States)

    An, Jincui; Sun, An; Qiao, Yong; Zhang, Peipei; Su, Ming

    2015-02-01

    Device-related infections have been a big problem for a long time. This paper describes a new method to inhibit bacterial growth on implanted device with tissue-penetrating X-ray radiation, where a thin metallic film deposited on the device is used as a radio-sensitizing film for bacterial inhibition. At a given dose of X-ray, the bacterial viability decreases as the thickness of metal film (bismuth) increases. The bacterial viability decreases with X-ray dose increases. At X-ray dose of 2.5 Gy, 98% of bacteria on 10 nm thick bismuth film are killed; while it is only 25% of bacteria are killed on the bare petri dish. The same dose of X-ray kills 8% fibroblast cells that are within a short distance from bismuth film (4 mm). These results suggest that penetrating X-rays can kill bacteria on bismuth thin film deposited on surface of implant device efficiently.

  16. Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates.

    Science.gov (United States)

    Li, M Z; Wang, Z H; Yang, L; Pan, D S; Li, Da; Gao, Xuan; Zhang, Zhi-Dong

    2018-05-14

    Controlling the growth direction (planar vs. vertical) and surface-to-bulk ratio can lead to lots of unique properties for two-dimensional (2D) layered materials. We report a simple method to fabricate continuous films of vertical Bi2Se3 nanoplates on Si substrate and investigate the quantum transport properties of such films. In contrast to (001) oriented planar Bi2Se3 nanoplate film, vertical Bi2Se3 nanoplate films are enclosed by (015) facets, which possess high surface-to-bulk ratio that can enhance the quantum transport property of topological surface states. And by controlling the compactness of vertical Bi2Se3 nanoplates, we realized an effective tuning of the weak antilocalization (WAL) effect from topological surface states in Bi2Se3 films. Our work paves a way for exploring the unique transport properties of this unconventional structure topological insulator film. © 2018 IOP Publishing Ltd.

  17. Growth-related magnetic and physical structures in CMR films

    Energy Technology Data Exchange (ETDEWEB)

    Hawley, M.E.; Brown, G.W.; Hundley, M.F. [and others

    1997-09-01

    Scanning tunneling microscopy (STM), atomic force microscopy (AFM), and magnetic force microscopy (MFM) have proven to be powerful tools for revealing property-sensitive structures in magnetic materials. With the renewed interest in perovskite films as materials for read-heads in high density magnetic data storage, the same challenges faced by high temperature superconductor (HTS) film fabrication are repeated for these materials. To begin addressing these challenges, we used vapor phase epitaxy to fabricate La (Sr, Ca,) based manganate films on single crystal perovskite substrates under different conditions and characterized them with scanning probe microscopies, x-ray diffraction, and temperature-dependent magnetization and resistivity measurements (M(T) and {rho}(T)). The as-grown films were polygranular with grain sizes increasing with increasing temperature (T). The post-deposition annealed films consisted of coalesced layers with improved transport properties. The room temperature magnetic structure of the Sr-based films appeared to be related to defects and/or strain.

  18. Mechanical behaviour of composite materials made by resin film infusion

    Directory of Open Access Journals (Sweden)

    Casavola C.

    2010-06-01

    Full Text Available Innovative composite materials are frequently used in designing aerospace, naval and automotive components. In the typical structure of composites, multiple layers are stacked together with a particular sequence in order to give specific mechanical properties. Layers are organized with different angles, different sequences and different technological process to obtain a new and innovative material. From the standpoint of engineering designer it is useful to consider the single layer of composite as macroscopically homogeneous material. However, composites are non homogeneous bodies. Moreover, layers are not often perfectly bonded together and delamination often occurs. Other violations of lamination theory hypotheses, such as plane stress and thin material, are not unusual and in many cases the transverse shear flexibility and the thickness-normal stiffness should be considered. Therefore the real behaviour of composite materials is quite different from the predictions coming from the traditional lamination theory. Due to the increasing structural performance required to innovative composites, the knowledge of the mechanical properties for different loading cases is a fundamental source of concern. Experimental characterization of materials and structures in different environmental conditions is extremely important to understand the mechanical behaviour of these new materials. The purpose of the present work is to characterize a composite material developed for aerospace applications and produced by means of the resin film infusion process (RFI. Different tests have been carried out: tensile, open-hole and filled-hole tensile, compressive, openhole and filled-hole compressive. The experimental campaign has the aim to define mechanical characteristics of this RFI composite material in different conditions: environmental temperature, Hot/Wet and Cold.

  19. Growth, characterization, and device development in monocrystalline diamond films

    Science.gov (United States)

    Davis, Robert F.

    1991-12-01

    The nucleation of diamond grains on an unscratched silicon wafer is enhanced by four order of magnitude relative to scratched substrates by using negative bias enhanced microwave plasma CVD in a 2 percent methane/hydrogen plasma for an initial period. In vacuo surface analysis has revealed that the actual nucleation occurs on the amorphous C coating present on the thin SiC layer which forms as the product of the initial reaction with the Si surface. It is believed that the C forms critical clusters which are favorable for diamond nucleation. Similar enhancement was observed together with the occurrence of textured diamond films in the use of bias pretreatment of cubic Beta SiC substrates. Approximately 50 percent of the initial diamond nuclei were aligned with the SiC substrate. In contrast, the use of the biasing pretreatment for one hour on polycrystalline substrates resulted in only about 7 percent coverage with diamond particles. Numerous techniques have been used to analyze the nucleation and growth phenomena, especially micro Raman and scanning tunneling microscopy. The latter technique has shown that the morphology of doped and undoped diamond nuclei are similar, as well as the fact that significant concentrations of vacancy related defects are present. In device related-studies, UV-photoemission studies have shown that TiC occurs at the Ti-diamond (100) interface after a 400 C anneal. The Schottky barrier height from this metal on p-type diamond was determined to be 1.0 eV. Indications of negative electron affinity (NEA) was observed and attributed to emission of electrons that are quasi-thermalized to the bottom of the conduction band. A disordered surface removes the NEA. The microwave performance of p-type (beta-doped) diamond MESFET's at 10 GHz has been further investigated. Elevated temperatures may be necessary to obtain sufficient free charge densities in the conducting channel but this will result in degraded device performance. Each of these

  20. Mechanism analysis of improved DLC films friction behaviors with liquid sulfidation treatment

    International Nuclear Information System (INIS)

    Zeng Qunfeng; Yu Fei; Dong Guangneng; Mao Junhong

    2012-01-01

    Highlights: ► Liquid sulfidation is applied to treat DLC films. ► Sulfur atoms are chemically bonded and the graphitization presented in the treated films. ► The treated films exhibited much lower coefficient of friction than the untreated films under dry friction condition. ► The sulfidation mechanisms are supposed as surface chemical reaction and surface diffusion. ► The presence of sulfur-containing materials and graphitization are beneficial to improve anti-friction behaviors of the treated films. - Abstract: Diamond like carbon (DLC) films were treated by liquid sulfidation to improve their friction behaviors. Friction behaviors of DLC films were experimentally evaluated in ambient air under dry friction using GCr15 steel ball sliding over DLC-coated steel flat in a ball-on-disk tribometer system. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were applied to identify the chemical composition and structure of DLC films. It was found that the content of sp 2 carbon bond increased and G peak shifted to high wave number after sulfidation treatment. The measurement results showed that sulfur atoms were chemically bonded and the graphitization occurred in the treated DLC films. It was indicated that the treated DLC films exhibited much better friction behaviors than the untreated films, especially for DLC films deposited with high nitrogen ratio. In this paper, we proposed the possible sulfidation mechanism of sulfurized DLC films. Sulfidation mechanism is postulated that thiourea reacted with oxygen to form sulfur-containing organic compounds which included CSSC, CSOH and (NH 2 )NH=CSO 2 H and surface diffusion during sulfidation treatment. The anti-friction behaviors of the treated DLC films can be attributed to the production of the compounds containing sulfur on the DLC film surface, the reduce of oxygen content and the presence of graphitization of DLC films.

  1. Chemical Mechanical Polishing of Ruthenium, Cobalt, and Black Diamond Films

    Science.gov (United States)

    Peethala, Brown Cornelius

    Ta/TaN bilayer serves as the diffusion barrier as well as the adhesion promoter between Cu and the dielectric in 32 nm technology devices. A key concern of future technology devices (layer (vs. a bilayer of Ta/TaN) to act as a barrier. During patterning, they need to be planarized using conventional chemical mechanical polishing (CMP) to achieve a planar surface. However, CMP of these new barrier materials requires novel slurry compositions that provide adequate selectivity towards Cu and dielectric films, and minimize galvanic corrosion. Apart from the application as a barrier, Ru also has been proposed as a lower electrode material in metal-insulator-metal capacitors where high (> 50 nm/min) Ru removal rates (RRs) are required and as a stop layer in magnetic recording head fabrication where low (hydroxide (KOH). It was also determined that increased the ionic strength is not responsible for the observed increase in Ru removal rate. Benzotirazole (BTA) and ascorbic acid were added to the slurry to reduce the open circuit potential (Eoc) difference between Cu and Ru to ˜20 mV from about 550 mV in the absence of additives. A removal mechanism with KIO4 as the oxidizing agent is proposed based on the formation of several ruthenium oxides, some of which formed residues on the polishing pad below a pH of ˜7. Next, a colloidal silica-based slurry with hydrogen peroxide (H 2O2) as the oxidizer (1 wt%), and arginine (0.5 wt%) as the complexing agent was developed to polish Co at pH 10. The Eoc between Cu and Co at the above conditions was reduced to ˜20 mV compared to ˜250 mV in the absence of additives, suggestive of reduced galvanic corrosion during the Co polishing. The slurry also has the advantages of good post-polish surface quality at pH 10, and no dissolution rate. BTA at a concentration of 5mM in this slurry inhibited Cu dissolution rates and yielded a Cu/Co RR ratio of ˜0.8:1 while the open potential difference between Cu and Co was further reduced to ˜10

  2. Optimization of ion assist beam deposition of magnesium oxide template films during initial nucleation and growth

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R [Los Alamos National Laboratory; Matias, Vladimir [Los Alamos National Laboratory; Stan, Liliana [Los Alamos National Laboratory; De Paula, Raymond F [Los Alamos National Laboratory; Hammond, Robert H [STANFORD UNIV.; Clemens, Bruce M [STANFOED UNIV.

    2010-01-01

    Recent efforts in investigating the mechanism of ion beam assisted deposition (IBAD) of biaxially textured thin films of magnesium oxide (MgO) template layers have shown that the texture develops suddenly during the initial 2 nm of deposition. To help understand and tune the behavior during this initial stage, we pre-deposited thin layers of MgO with no ion assist prior to IBAD growth of MgO. We found that biaxial texture develops for pre-deposited thicknesses < 2 nm, and that the thinnest layer tested, at 1 nm, resulted in the best qualitative RHEED image, indicative of good biaxial texture development. The texture developed during IBAD growth on the 1.5 nm pre-deposited layer is slightly worse and IBAD growth on the 2 nm pre-deposited layer produces a fiber texture. Application of these layers on an Al{sub 2}O{sub 3} starting surface, which has been shown to impede texture development, improves the overall quality of the IBAD MgO and has some of the characteristics of a biaxially texture RHEED pattern. It is suggested that the use of thin (<2 nm) pre-deposited layers may eliminate the need for bed layers like Si{sub 3}N{sub 4} and Y{sub 2}O{sub 3} that are currently thought to be required for proper biaxial texture development in IBAD MgO.

  3. Exploring the mechanism of microarteriogenesis in porous silk fibroin film.

    Science.gov (United States)

    Bai, Lun; Wang, Guangqian; Tan, Xiaoyan; Xu, Jianmei

    2012-01-01

    Purpose. Based on the experiment of the microarteriogenesis that is associated with angiogenesis during tissue repair process in porous silk fibroin films (PSFFs), we investigate the characteristics of micro-arteriogenesis and explore its mechanism. Methods. After the porous silk fibroin materials are implanted into the back hypodermal tissue of SD rats, the arteriole development and the morphogenesis of smooth muscle cell are histologically monitored and the micro-arteriogenesis is quantitatively analyzed. Results. 10 days after implantation, the arteriole density reaches the highest level in the junction of silk fibroin materials with tissues. Three weeks later, the arteriolar density in the materials reaches the maximum, and the arterioles in the junction of materials with tissues appear to be in a mature and upgrading state. Modeling of Microarteriogenesis. The arterioles in materials are generated after capillary angiogenesis. It is inferred that arteriolar development does not start until the network of the capillaries is formed. At first, the arterioles grow in the conjunct area of precapillaries with arterioles. Then with the extension of the arterioles, the upgrade of arterioles in connecting area is observed at a later stage. Based on the observation, the conditions and the mechanism of microarterializations as well as the upgrade of arterioles are analyzed.

  4. Characteristics of growth of complex ferroelectric oxide films by plasma-ion sputtering

    Science.gov (United States)

    Mukhortov, V. M.; Golovko, Yu. I.; Mukhortov, Vl. M.; Dudkevich, V. P.

    1981-02-01

    An experimental investigation was made of the process of growth of a complex oxide film, such as BaTiO3 or (Ba, Sr)TiO3, by plasma-ion sputtering. It was found that ion bombardment of a ceramic target knocked out neutral excited atoms. These atoms lost energy away from the target by collisions and at a certain critical distance hcr they were capable of oxidation to produce BaO, TiO, TiO2, and SrO. Therefore, depending on the distance between the cathode and the substrate, the “construction” material arrived in the form of atoms or molecules of simple oxides. These two (atomic and molecular) deposition mechanisms corresponded to two mechanisms of synthesis and crystallization differing in respect of the dependences of the growth rate, unit cell parameters, and other structural properties on the deposition temperature. The role of re-evaporation and of oxidation-reduction processes was analyzed.

  5. Two-component spin-coated Ag/CNT composite films based on a silver heterogeneous nucleation mechanism adhesion-enhanced by mechanical interlocking and chemical grafting

    Science.gov (United States)

    Zhang, Yang; Kang, Zhixin; Bessho, Takeshi

    2017-03-01

    In this paper, a new method for the synthesis of silver carbon nanotube (Ag/CNT) composite films as conductive connection units for flexible electronic devices is presented. This method is about a two-component solution process by spin coating with an after-treatment annealing process. In this method, multi-walled carbon nanotubes (MWCNTs) act as the core of silver heterogeneous nucleation, which can be observed and analyzed by a field-emission scanning electron microscope. With the effects of mechanical interlocking, chemical grafting, and annealing, the interfacial adhesive strength between films and PET sheets was enhanced to 12 N cm-1. The tensile strength of the Ag/CNT composite films was observed to increase by 38% by adding 5 g l-1 MWCNTs. In the four-probe method, the resistivity of Ag/CNT-5 declined by 78.2% compared with pristine Ag films. The anti-fatigue performance of the Ag/CNT composite films was monitored by cyclic bending deformation and the results revealed that the growth rate of electrical resistance during the deformation was obviously retarded. As for industrial application, this method provides an efficient low-cost way to prepare Ag/CNT composite films and can be further applied to other coating systems.

  6. Investigating the crystal growth behavior of biodegradable polymer blend thin films using in situ atomic force microscopy

    CSIR Research Space (South Africa)

    Malwela, T

    2014-01-01

    Full Text Available This article reports the crystal growth behavior of biodegradable polylactide (PLA)/poly[(butylene succinate)-co-adipate] (PBSA) blend thin films using atomic force microscopy (AFM). Currently, polymer thin films have received increased research...

  7. Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

    International Nuclear Information System (INIS)

    Singh, Preetam; Kaur, Davinder

    2010-01-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  8. Beyond the Young-Laplace model for cluster growth during dewetting of thin films: effective coarsening exponents and the role of long range dewetting interactions.

    Science.gov (United States)

    Constantinescu, Adi; Golubović, Leonardo; Levandovsky, Artem

    2013-09-01

    Long range dewetting forces acting across thin films, such as the fundamental van der Waals interactions, may drive the formation of large clusters (tall multilayer islands) and pits, observed in thin films of diverse materials such as polymers, liquid crystals, and metals. In this study we further develop the methodology of the nonequilibrium statistical mechanics of thin films coarsening within continuum interface dynamics model incorporating long range dewetting interactions. The theoretical test bench model considered here is a generalization of the classical Mullins model for the dynamics of solid film surfaces. By analytic arguments and simulations of the model, we study the coarsening growth laws of clusters formed in thin films due to the dewetting interactions. The ultimate cluster growth scaling laws at long times are strongly universal: Short and long range dewetting interactions yield the same coarsening exponents. However, long range dewetting interactions, such as the van der Waals forces, introduce a distinct long lasting early time scaling behavior characterized by a slow growth of the cluster height/lateral size aspect ratio (i.e., a time-dependent Young angle) and by effective coarsening exponents that depend on cluster size. In this study, we develop a theory capable of analytically calculating these effective size-dependent coarsening exponents characterizing the cluster growth in the early time regime. Such a pronounced early time scaling behavior has been indeed seen in experiments; however, its physical origin has remained elusive to this date. Our theory attributes these observed phenomena to ubiquitous long range dewetting interactions acting across thin solid and liquid films. Our results are also applicable to cluster growth in initially very thin fluid films, formed by depositing a few monolayers or by a submonolayer deposition. Under this condition, the dominant coarsening mechanism is diffusive intercluster mass transport while the

  9. Mechanism of manganese (mono and di) telluride thin-film formation and properties

    Science.gov (United States)

    Sharma, Raj Kishore; Singh, Gurmeet; Shul, Yong Gun; Kim, Hansung

    2007-03-01

    Mechanistic studies on the electrocrystallization of manganese telluride (MnTe) thin film are reported using aqueous acidic solution containing MnSO 4 and TeO 2. Tartaric acid was used for the inhibition of hydrated manganese oxide anodic growth at counter electrode. A detailed study on the mechanistic aspect of electrochemical growth of MnTe using cyclic voltametry is carried out. Conditions for electrochemical growth of manganese mono and di telluride thin films have been reported using cyclic voltammetric scans for Mn 2+, Te 4+ and combined Mn 2+ and Te 4+. X-ray diffraction showed the formation of polycrystalline MnTe films with cubic, hexagonal and orthorhombic mixed phases. MnTe film morphology was studied using scanning electron microscope. Susceptibility and electrical characterization supports the anti-ferromagnetic behavior of the as-deposited MnTe thin film.

  10. Atomistic growth phenomena of reactively sputtered RuO2 and MnO2 thin films

    International Nuclear Information System (INIS)

    Music, Denis; Bliem, Pascal; Geyer, Richard W.; Schneider, Jochen M.

    2015-01-01

    We have synthesized RuO 2 and MnO 2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO 2 nanorods and faceted, nanocrystalline MnO 2 , are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O 2 molecules are preferentially adsorbed at their respective RuO 2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO 2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO 2 . Due to this atomic scale decomposition, MnO 2 may have to be renucleated during growth, which is consistent with experiments

  11. Molecular beam epitaxy growth of InSb1−xBix thin films

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Saha Roy, Ivy

    2013-01-01

    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

  12. Morphological analysis of co-evaporated blend films based on initial growth for organic photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Shibata, Yosei, E-mail: yosei.shibata@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Taima, Tetsuya [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Zhou, Ying; Ohashi, Noboru; Kono, Takahiro [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Yoshida, Yuji, E-mail: yuji.yoshida@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2015-11-15

    Graphical abstract: - Highlights: • Initial growth mode of co-evaporated films was observed. • Balanced crystal growth leads to improvement of photovoltaic performance. • Crystal growth of fullerene during co-evaporation process was restricted. • The power conversion efficiency of 3% was obtained without electron blocking layer. - Abstract: Bulk heterojunction structures composed of electron donor and acceptor molecules for application in high-performance organic photovoltaics studied. To fabricate these structures, the co-evaporation method in vacuum is commonly applied; however, the details of the crystal growth process during co-evaporation have not yet been established. Here, we focused on structural analysis of blend films composed of phthalocyanine and fullerene based on initial growth stage. Similar crystal growth behavior to that typically observed in single-component molecules is obtained for the films. These results suggest that the competitive crystal growth between donors and acceptors occurs during co-evaporation process. The balance of thin film growth among donor and acceptor molecules can be related to improved photovoltaic performance. The homogeneous blend structure leads to improvement of the power conversion efficiency from 1.2% to 3.0%.

  13. Growth, structure and magnetic properties of magnetron sputtered FePt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cantelli, Valentina

    2010-07-01

    The L1{sub 0} FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L1{sub 0} phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt-L1{sub 0} selforganized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were investigated. The work is focused on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (cosputtering vs. layer - by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3-3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320{+-}20) C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L1{sub 0}-FePt films were obtained on a-SiO{sub 2} after vacuum annealing. L1{sub 0}-FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly

  14. Continuum damage mechanics method for fatigue growth of surface cracks

    International Nuclear Information System (INIS)

    Feng Xiqiao; He Shuyan

    1997-01-01

    With the background of leak-before-break (LBB) analysis of pressurized vessels and pipes in nuclear plants, the fatigue growth problem of either circumferential or longitudinal semi-elliptical surface cracks subjected to cyclic loading is studied by using a continuum damage mechanics method. The fatigue damage is described by a scalar damage variable. From the damage evolution equation at the crack tip, a crack growth equation similar to famous Paris' formula is derived, which shows the physical meaning of Paris' formula. Thereby, a continuum damage mechanics approach is developed to analyze the configuration evolution of surface cracks during fatigue growth

  15. Photoelectron diffraction study of Rh nanoparticles growth on Fe3O4/Pd(111) ultrathin film

    International Nuclear Information System (INIS)

    Abreu, G. J. P.; Pancotti, A; Lima, L. H. de; Landers, R.; Siervo, A. de

    2013-01-01

    Metallic nanoparticles (NPs) supported on oxides thin films are commonly used as model catalysts for studies of heterogeneous catalysis. Several 4d and 5d metal NPs (for example, Pd, Pt and Au) grown on alumina, ceria and titania have shown strong metal support interaction (SMSI), for instance the encapsulation of the NPs by the oxide. The SMSI plays an important role in catalysis and is very dependent on the support oxide used. The present work investigates the growth mechanism and atomic structure of Rh NPs supported on epitaxial magnetite Fe 3 O 4 (111) ultrathin films prepared on Pd(111) using the Molecular Beam Epitaxy (MBE) technique. The iron oxide and the Rh NPs were characterized using X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction and photoelectron diffraction (PED). The combined XPS and PED results indicate that Rh NPs are metallic, cover approximately 20 % of the iron oxide surface and show height distribution ranging 3–5 ML (monolayers) with essentially a bulk fcc structure.

  16. Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

    Directory of Open Access Journals (Sweden)

    Tetiana Slusar

    2016-02-01

    Full Text Available We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT of vanadium dioxide (VO2 thin films synthesized on aluminum nitride (AlN/Si (111 substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010 ‖ AlN (0001 with VO2 [101] ‖   AlN   [ 2 1 ̄ 1 ̄ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ∼130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.

  17. Mechanical and shape memory properties of ferromagnetic Ni2MnGa sputter-deposited films

    Science.gov (United States)

    Ohtsuka, M.; Matsumoto, M.; Itagaki, K.

    2003-10-01

    The ternary intermetallic compound Ni2MnGa is an intelligent material, which has a shape memory effect and a ferromagnetic property. Use of shape memory alloy films for an actuator of micro machines is very attractive because of its large recovery force. The data of mechanical and shape memory properties of the films are required to use for the actuator. The purpose of this study is to investigate the effects of fabrication conditions and to clarify the relationships between these properties and fabrication conditions of the Ni{2}MnGa films. The Ni{2}MnGa films were deposited with a radio-frequency magnetron sputtering apparatus using a Ni{50}Mn{25}Ga{25} or Ni{52}Mn{24}Ga{24} target. After deposition, the films were annealed at 873sim 1173 K. The asdeposited films were crystalline and had columnar grains. After the heat treatment, the grains widened and the grain boundary became indistinct with increasing heat treatment temperature. MnO and Ni{3} (Mn, Ga) precipitations were observed in the heat-treated films. The mechanical properties of the films were measured by the nanoindentation method. Hardness and elastic modulus of as-deposited films were larger than those of arcmelted bulk alloys. The hardness of the films was affected by the composition, crystal structure, microstructure and precipitation, etc. The elastic modulus of the films was also changed with the heat treatment conditions. The heat-treated films showed a thermal two-way shape memory effect.

  18. Mechanical Integrity of Flexible In-Zn-Sn-O Film for Flexible Transparent Electrode

    Science.gov (United States)

    Kim, Young Sung; Oh, Se-In; Choa, Sung-Hoon

    2013-05-01

    The mechanical integrity of transparent In-Zn-Sn-O (IZTO) films is investigated using outer/inner bending, stretching, and twisting tests. Amorphous IZTO films are grown using a pulsed DC magnetron sputtering system with an IZTO target on a polyimide substrate at room temperature. Changes in the optical and electrical properties of IZTO films depend on the oxygen partial pressure applied during the film deposition process. In the case of 3% oxygen partial pressure, the IZTO films exhibit s resistivity of 8.3×10-4 Ω cm and an optical transmittance of 86%. The outer bending test shows that the critical bending radius decreases from 10 to 7.5 mm when the oxygen partial pressure is increased from 1 to 3%. The inner bending test reveals that the critical bending radius of all IZTO films is 3.5 mm regardless of oxygen partial pressure. The IZTO films also show excellent mechanical reliability in the bending fatigue tests of more than 10,000 cycles. In the uniaxial stretching tests, the electrical resistance of the IZTO film does not change until a strain of 2.4% is reached. The twisting tests demonstrate that the electrical resistance of IZTO films remains unchanged up to 25°. These results suggest that IZTO films have excellent mechanical durability and flexibility in comparison with already reported crystallized indium tin oxide (ITO) films.

  19. Use of Gallic Acid to Enhance the Antioxidant and Mechanical Properties of Active Fish Gelatin Film.

    Science.gov (United States)

    Limpisophon, Kanokrat; Schleining, Gerhard

    2017-01-01

    This study explores the potential roles of gallic acid in fish gelatin film for improving mechanical properties, UV barrier, and providing antioxidant activities. Glycerol, a common used plasticizer, also impacts on mechanical properties of the film. A factorial design was used to investigate the effects of gallic acid and glycerol concentrations on antioxidant activities and mechanical properties of fish gelatin film. Increasing the amount of gallic acid increased the antioxidant capacities of the film measured by radical scavenging assay and the ferric reducing ability of plasma assay. The released antioxidant power of gallic acid from the film was not reduced by glycerol. The presence of gallic acid not only increased the antioxidant capacity of the film, but also increased the tensile strength, elongation at break, and reduced UV absorption due to interaction between gallic acid and protein by hydrogen bonding. Glycerol did not affect the antioxidant capacities of the film, but increased the elasticity of the films. Overall, this study revealed that gallic acid entrapped in the fish gelatin film provided antioxidant activities and improved film characteristics, namely UV barrier, strength, and elasticity of the film. © 2016 Institute of Food Technologists®.

  20. Structural and mechanical properties of amorphous carbon films deposited by the dual plasma technique

    Institute of Scientific and Technical Information of China (English)

    Yaohui Wang; Xu Zhang; Xianying Wu; Huixing Zhang; Xiaoji Zhang

    2008-01-01

    Direct current metal filtered cathodic vacuum are (FCVA) and acetylene gas (C2H2) were wielded to synthesize Ti-containing amorphous carbon films on Si (100). The influence of substrate bias voltage and acetylene gas on the microstructure and mechanical properties of the films were investigated. The results show that the phase of TiC in the (111) preferential crystallo-graphic orientation exists in the film, and rite main existing pattern of carbon is sp2. With increasing the acetylene flow rate, the con-tents of Ti and TiC phase of the film gradually reduce; however, the thickness of the film increases. When the substrate bias voltage reaches -600 V, the internal stress of the film reaches 1.6 GPa. The micro-hardness and elastic modulus of the film can reach 33.9 and 237.6 GPa, respectively, and the friction coefficient of the film is 0.25.

  1. Mechanical, barrier and morphological properties of starch nanocrystals-reinforced pea starch films.

    Science.gov (United States)

    Li, Xiaojing; Qiu, Chao; Ji, Na; Sun, Cuixia; Xiong, Liu; Sun, Qingjie

    2015-05-05

    To characterize the pea starch films reinforced with waxy maize starch nanocrystals, the mechanical, water vapor barrier and morphological properties of the composite films were investigated. The addition of starch nanocrystals increased the tensile strength of the composite films, and the value of tensile strength of the composite films was highest when starch nanocrystals content was 5% (w/w). The moisture content (%), water vapor permeability, and water-vapor transmission rate of the composite films significantly decreased as starch nanocrystals content increased. When their starch nanocrystals content was 1-5%, the starch nanocrystals dispersed homogeneously in the composite films, resulting in a relatively smooth and compact film surface and better thermal stability. However, when starch nanocrystals content was more than 7%, the starch nanocrystals began to aggregate, which resulted in the surface of the composite films developing a longitudinal fibrous structure. Copyright © 2014 Elsevier Ltd. All rights reserved.

  2. Growth of magnetite films by a hydrogel method

    Energy Technology Data Exchange (ETDEWEB)

    Velásquez, A.A., E-mail: avelas26@eafit.edu.edu.co [Grupo de Electromagnetismo Aplicado, Universidad EAFIT, A.A. 3300, Medellín (Colombia); Marín, C.C. [Grupo de Electromagnetismo Aplicado, Universidad EAFIT, A.A. 3300, Medellín (Colombia); Urquijo, J.P. [Grupo de Estado Sólido, Instituto de Física, Universidad de Antioquia, A.A. 1226, Medellín (Colombia)

    2017-06-15

    Magnetite (Fe{sub 3}O{sub 4}) films were grown on glass substrates by formation and condensation of complex of iron oxides in an agarose hydrogel. The obtained films were characterized by Fourier Transform Infrared Spectroscopy (FTIR), Thermogravimetric Analysis (TGA), Scanning Electron Microscopy (SEM), Room Temperature Mössbauer Spectroscopy (TMS), Vibrating Sample Magnetometry (VSM), Atomic Force Microscopy (AFM) and Voltage vs. Current measurements by the four-point method. FTIR and TGA measurements showed that some polymer chains of agarose remain linked to the surface of the magnetic particles of the films after heat treatment. SEM measurements showed that the films are composed by quasi spherical particles with sizes around 55 nm. Mössbauer spectroscopy measurements showed two sextets with broaden lines, which were assigned to magnetite with a distributed particle size, and two doublets, which were assigned to superparamagnetic phases of magnetite. For the specific dimensions of the films prepared, measurements of Voltage vs. Current showed an ohmic behavior for currents between 0 and 200 nA, with a resistance of 355 kΩ.

  3. Growth of magnetite films by a hydrogel method

    International Nuclear Information System (INIS)

    Velásquez, A.A.; Marín, C.C.; Urquijo, J.P.

    2017-01-01

    Magnetite (Fe 3 O 4 ) films were grown on glass substrates by formation and condensation of complex of iron oxides in an agarose hydrogel. The obtained films were characterized by Fourier Transform Infrared Spectroscopy (FTIR), Thermogravimetric Analysis (TGA), Scanning Electron Microscopy (SEM), Room Temperature Mössbauer Spectroscopy (TMS), Vibrating Sample Magnetometry (VSM), Atomic Force Microscopy (AFM) and Voltage vs. Current measurements by the four-point method. FTIR and TGA measurements showed that some polymer chains of agarose remain linked to the surface of the magnetic particles of the films after heat treatment. SEM measurements showed that the films are composed by quasi spherical particles with sizes around 55 nm. Mössbauer spectroscopy measurements showed two sextets with broaden lines, which were assigned to magnetite with a distributed particle size, and two doublets, which were assigned to superparamagnetic phases of magnetite. For the specific dimensions of the films prepared, measurements of Voltage vs. Current showed an ohmic behavior for currents between 0 and 200 nA, with a resistance of 355 kΩ.

  4. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Science.gov (United States)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  5. Molecular dynamics simulation about porous thin-film growth in secondary deposition

    International Nuclear Information System (INIS)

    Chen Huawei; Tieu, A. Kiet; Liu Qiang; Hagiwara, Ichiro; Lu Cheng

    2007-01-01

    The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters

  6. Molecular dynamics simulation about porous thin-film growth in secondary deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen Huawei [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China) and Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)]. E-mail: chen_hua_wei@yahoo.com; Tieu, A. Kiet [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia); Liu Qiang [School of Mechanical Engineering and Automation, Beihang University, No. 37 Xuyuan Road, Haidian District, Beijing (China); Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo (Japan); Lu Cheng [Mechanical Materials and Mechatronic Engineering, University of Wollongong, Northfields Avenue, NSW 2522 (Australia)

    2007-07-15

    The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters.

  7. Investigation of growth, coverage and effectiveness of plasma assisted nano-films of fluorocarbon

    International Nuclear Information System (INIS)

    Joshi, Pratik P.; Pulikollu, Rajasekhar; Higgins, Steven R.; Hu Xiaoming; Mukhopadhyay, S.M.

    2006-01-01

    Plasma-assisted functional films have significant potential in various engineering applications. They can be tailored to impart desired properties by bonding specific molecular groups to the substrate surface. The aim of this investigation was to develop a fundamental understanding of the atomic level growth, coverage and functional effectiveness of plasma nano-films on flat surfaces and to explore their application-potential for complex and uneven shaped nano-materials. In this paper, results on plasma-assisted nano-scale fluorocarbon films, which are known for imparting inertness or hydrophobicity to the surface, will be discussed. The film deposition was studied as a function of time on flat single crystal surfaces of silicon, sapphire and graphite, using microwave plasma. X-ray photoelectron spectroscopy (XPS) was used for detailed study of composition and chemistry of the substrate and coating atoms, at all stages of deposition. Atomic force microscopy (AFM) was performed in parallel to study the coverage and growth morphology of these films at each stage. Combined XPS and AFM results indicated complete coverage of all the substrates at the nanometer scale. It was also shown that these films grew in a layer-by-layer fashion. The nano-films were also applied to complex and uneven shaped nano-structured and porous materials, such as microcellular porous foam and nano fibers. It was seen that these nano-films can be a viable approach for effective surface modification of complex or uneven shaped nano-materials

  8. Modification of mechanical and thermal property of chitosan–starch blend films

    International Nuclear Information System (INIS)

    Tuhin, Mohammad O.; Rahman, Nazia; Haque, M.E.; Khan, Ruhul A.; Dafader, N.C.; Islam, Rafiqul; Nurnabi, Mohammad; Tonny, Wafa

    2012-01-01

    Chitosan–starch blend films (thickness 0.2 mm) of different composition were prepared by casting and their mechanical properties were studied. To improve the properties of chitosan–starch films, glycerol and mustard oil of different composition were used. Chitosan–starch films, incorporated with glycerol and mustard oil, were further modified with monomer 2-hydroxyethyl methacrylate (HEMA) using gamma radiation. The modified films showed improvement in both tensile strength and elongation at break than the pure chitosan–starch films. Water uptake of the films reduced significantly than the pure chitosan–starch film. Thermo gravimetric analysis (TGA) and dynamic mechanical analysis (DMA) showed that the modified films experience less thermal degradation than the pure films. Scanning electron microscopy (SEM) and FTIR were used to investigate the morphology and molecular interaction of the blend film, respectively. - Highlights: ► Chitosan–starch blend films (thickness 0.2 mm) were prepared by casting. ► To improve the properties of chitosan–starch films, glycerol and mustard oil of different composition were used. ► Chitosan–starch films, incorporated with glycerol and mustard oil, were further modified with monomer 2-hydroxyethyl methacrylate (HEMA) using gamma radiation. ► Properties of the modified films such as tensile strength, elongation at break, water uptake, TGA, DMA, SEM, FTIR were studied. ► Results indicate that modification of chitosan–starch film with mustard oil improved the properties of the blend films which could be further modified by HEMA using gamma radiation.

  9. Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2015-01-01

    LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

  10. In situ characterization of thin film growth: Boron nitride on silicon

    International Nuclear Information System (INIS)

    Fukarek, W.

    2001-01-01

    Real-time ellipsometry (RTE) in combination with particle flux measurement is applied to ion beam assisted deposition of boron nitride (BN) films. RTE is used as a tool for process diagnostic to improve the deposition stability. A novel technique for the determination of absolute density depth profiles from dynamic growth rate data and film forming particle flux is employed. From real-time cantilever curvature measurement and simultaneously recorded film thickness data instantaneous stress depth profiles are derived with a depth resolution in the nm range. The synergistic effects on the information obtained from RTE, particle flux, and cantilever bending data are demonstrated. The density of turbostratic BN (tBN) is found to increase slightly with film thickness while the compressive stress decreases, indicating an increasing quality and/or size of crystallites in the course of film growth. Refractive index and density depth profiles in cubic BN (cBN) films correspond perfectly to structural information obtained from dark field transmission electron microscope graphs. The established tBN/cBN two-layer model is found to be a crude approximation that has to be replaced by a three-layer model including nucleation, grain growth, and coalescence of cBN. The instantaneous compressive stress in a homogeneous tBN film is found to decrease, while the density increases during growth. The instantaneous compressive stress depth profiles in cBN films are more complex and not easy to understand but reliable information on the structural evolution during growth can be extracted

  11. Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

    International Nuclear Information System (INIS)

    Zhang, R H; Slamovich, E B; Handwerker, C A

    2013-01-01

    Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl − ) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl − ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl − to dominate. By optimizing the growth conditions, a dense ∼100 nm thickness film was fabricated in 15 min from a solution of [Cl − ]/[Zn 2+ ] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm 2 V −1 s −1 at zero back-gate bias. (paper)

  12. Effect of deposition temperature & oxygen pressure on mechanical properties of (0.5) BZT-(0.5)BCT ceramic thin films

    Science.gov (United States)

    Sailaja, P.; Kumar, N. Pavan; Rajalakshmi, R.; Kumar, R. Arockia; Ponpandian, N.; Prabahar, K.; Srinivas, A.

    2018-05-01

    Lead free ferroelectric thin films of {(0.5) BZT-(0.5) BCT} (termed as BCZT) were deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition at four deposition temperatures 600, 650, 700, 750°C and at two oxygen pressures viz. 75mtorr and 100 mtorr using BCZT ceramic target (prepared by solid state sintering method). The effect of deposition temperature and oxygen pressure on the structure, microstructure and mechanical properties of BCZT films were studied. X-ray diffraction patterns of deposited films confirm tetragonal crystal symmetry and the crystallinity of the films increases with increasing deposition temperature. Variation in BCZT grain growth was observed when the films are deposited at different temperatures andoxygen pressures respectively. The mechanical properties viz. hardness and elastic modulus were also found to be high with increase in the deposition temperature and oxygen pressure. The results will be discussed.

  13. Thin film growth studies using time-resolved x-ray scattering

    Science.gov (United States)

    Kowarik, Stefan

    2017-02-01

    Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

  14. Mechanism of growth retardation of the adenocarcinoma EO 771

    International Nuclear Information System (INIS)

    Bassukas, I.D.; Maurer-Schultze, B.

    1987-01-01

    Growth retardation of tumors has been predominantly described by an increase of the ''cell loss factor'' Φ. However, this cell loss factor alone merely reflects the growth deceleration without giving information on the mechanism that causes growth retardation. In the present study a quantitative analysis of the mechanism causing growth retardation of the adenocarcinoma EO 771 has been carried out by determining separately the components of the cell loss factor Φ, namely the cell production rate and the cell loss rate of the tumor cell population. For this purpose the alteration of the histology of the tumor (proportion of necrotic tumor tissue, tumor cell density) and the proliferative capacity of the tumor cell population as a function of the tumor size was studied by applying morphometric and cell kinetic methods. The results show that growth deceleration is due to a decrease of the cell production rate k p and a simultaneous increase of the cell rate k l . Both processes contribute to about the same extent to the growth deceleration of the tumor cell population. In early tumor growth deceleration is mainly due to a prolongation of the cycle time of the tumor cells, in later phases of tumor growth to an increasing probability of the tumor cells to decycle leading to a decrease of the growth fraction GF and an increase of the cell loss rate k l . (orig.)

  15. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    International Nuclear Information System (INIS)

    Bulusu, A.; Singh, A.; Kim, H.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B.; Cullen, D.; Graham, S.

    2015-01-01

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al 2 O 3 )/hafnium oxide (HfO 2 ) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN x layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers

  16. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  17. Mechanical, physico-chemical, and antimicrobial properties of gelatin-based film incorporated with catechin-lysozyme

    Directory of Open Access Journals (Sweden)

    Rawdkuen Saroat

    2012-11-01

    Full Text Available Abstract Background Microbial activity is a primary cause of deterioration in many foods and is often responsible for reduced quality and safety. Food-borne illnesses associated with E. coli O157:H7, S. aureus, S. enteritidis and L. monocytogenes are a major public health concern throughout the world. A number of methods have been employed to control or prevent the growth of these microorganisms in food. Antimicrobial packaging is one of the most promising active packaging systems for effectively retarding the growth of food spoilage and pathogenic microorganisms. The aim of this study was to determine the mechanical, physico-chemical properties and inhibitory effects of the fish gelatin films against selected food spoilage microorganisms when incorporated with catechin-lysozyme. Results The effect of the catechin-lysozyme combination addition (CLC: 0, 0.125, 0.25, and 0.5%, w/v on fish gelatin film properties was monitored. At the level of 0.5% addition, the CLC showed the greatest elongation at break (EAB at 143.17% with 0.039 mm thickness, and the lowest water vapor permeability (WVP at 6.5 x 10−8 g·mm·h-1·cm-2·Pa-1, whereas the control showed high tensile strength (TS and the highest WVP. Regarding color attributes, the gelatin film without CLC addition gave the highest lightness (L* 91.95 but lowest in redness (a*-1.29 and yellowness (b* 2.25 values. The light transmission of the film did not significantly decrease and nor did film transparency (p>0.05 with increased CLC. Incorporating CLC could not affect the film microstructure. The solubility of the gelatin based film incorporated with CLC was not affected, especially at a high level of addition (p>0.05. Inhibitory activity of the fish gelatin film against E.coli, S.aureus, L. innocua and S. cerevisiae was concentration dependent. Conclusions These findings suggested that CLC incorporation can improve mechanical, physico-chemical, and antimicrobial properties of the resulting films

  18. Surface structure deduced differences of copper foil and film for graphene CVD growth

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Junjun [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Hu, Baoshan, E-mail: hubaoshan@cqu.edu.cn [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Wei, Zidong; Jin, Yan [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Luo, Zhengtang [Department of Chemical and Biomolecular Engineering, The Hongkong University of Science and Technology, Kowloon (Hong Kong); Xia, Meirong [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Pan, Qingjiang [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080 (China); Liu, Yunling [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China)

    2014-05-01

    Highlights: • We demonstrate the significant differences between Cu foil and film in the surface morphology and crystal orientation distribution. • The different surface structure leads to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. • Nucleation densities and growth rate differences at the initial growth stages on the Cu foil and film were investigated and discussed. Abstract: Graphene was synthesized on Cu foil and film by atmospheric pressure chemical vapor deposition (CVD) with CH₄ as carbon source. Electron backscattered scattering diffraction (EBSD) characterization demonstrates that the Cu foil surface after the H₂-assisted pre-annealing was almost composed of Cu(1 0 0) crystal facet with larger grain size of ~100 μm; meanwhile, the Cu film surface involved a variety of crystal facets of Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0), with the relatively small grain size of ~10 μm. The different surface structure led to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. Further data demonstrate that the Cu foil enabled more nucleation densities and faster growth rates at the initial growth stages than the Cu film. Our results are beneficial for understanding the relationship between the metal surface structure and graphene CVD growth.

  19. Hybrid Thin Film Organosilica Sol-Gel Coatings To Support Neuronal Growth and Limit Astrocyte Growth.

    Science.gov (United States)

    Capeletti, Larissa Brentano; Cardoso, Mateus Borba; Dos Santos, João Henrique Zimnoch; He, Wei

    2016-10-07

    Thin films of silica prepared by a sol-gel process are becoming a feasible coating option for surface modification of implantable neural sensors without imposing adverse effects on the devices' electrical properties. In order to advance the application of such silica-based coatings in the context of neural interfacing, the characteristics of silica sol-gel are further tailored to gain active control of interactions between cells and the coating materials. By incorporating various readily available organotrialkoxysilanes carrying distinct organic functional groups during the sol-gel process, a library of hybrid organosilica coatings is developed and investigated. In vitro neural cultures using PC12 cells and primary cortical neurons both reveal that, among these different types of hybrid organosilica, the introduction of aminopropyl groups drastically transforms the silica into robust neural permissive substrate, supporting neuron adhesion and neurite outgrowth. Moreover, when this organosilica is cultured with astrocytes, a key type of glial cells responsible for glial scar response toward neural implants, such cell growth promoting effect is not observed. These findings highlight the potential of organo-group-bearing silica sol-gel to function as advanced coating materials to selectively modulate cell response and promote neural integration with implantable sensing devices.

  20. A novel diagnostic approach for studying silicon thin film growth

    NARCIS (Netherlands)

    Hoefnagels, J.P.M.

    2005-01-01

    In the deposition of thin films, the material properties are formed through the interaction of gas phase species with the growing surface. The resulting surface kinetics and chemistry is determined by the reactivity of the different gas phase species as well as by the surface chemical nature and may

  1. Biodegradable and bioactive CGP/PVA film for fungal growth inhibition.

    Science.gov (United States)

    Silva, Bárbara Dumas S; Ulhoa, Cirano J; Batista, Karla A; Di Medeiros, Maria Carolina; Da Silva Filho, Rômulo Roosevelt; Yamashita, Fabio; Fernandes, Kátia F

    2012-07-01

    In this study, chitinolytic enzymes produced by Trichoderma asperellum were immobilized on a biodegradable film manufactured with a blend of cashew gum polysaccharide (CGP) and polyvinyl alcohol (PVA), and tested as a fungal growth inhibitor. The film was produced by casting a blend of CGP and PVA solution on glass molds. The CGP/PVA film showed 68% water solubility, tensile strength of 23.7 MPa, 187.2% elongation and 52% of mass loss after 90 days in soil. The presence of T-CWD enzymes immobilized by adsorption or covalent attachment resulted in effective inhibition of fungal growth. Sclerotinia sclerotiorum was the most sensitive organism, followed by Aspergillus niger and Penicillium sp. SEM micrograph showed that the presence of immobilized T-CWD enzymes on CGP/PVA film produced morphological modifications on vegetative and germinative structures of the microorganisms, particularly hyphae disruption and changes of spores shape. Copyright © 2012 Elsevier Ltd. All rights reserved.

  2. Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

    2009-07-01

    Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

  3. Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth

    International Nuclear Information System (INIS)

    Nishio, Mitsuhiro; Hayashida, Kazuki; Harada, Hiroki; Mitsuishi, Yoshiaki; Guo Qixin; Ogawa, Hiroshi

    2001-01-01

    ZnTe homoepitaxial films have been deposited at substrate temperatures between 27 deg. C and 100 deg. C by synchrotron-radiation-excited growth using diethylzinc and diethyltelluride. Effects of diethylzinc transport rate and substrate temperature upon the photoluminescence properties of the ZnTe films have been clarified. Strong deep level emissions centered at 1.85 and 2.1 eV related to defects such as vacancy-impurity complex become emerged with increasing diethylzinc transport rate or substrate temperature. A sharply excitonic emission at 2.375 eV associated with shallow acceptors is observed and neither a donor-acceptor pair recombination nor a deep level luminescence signal is detected in the spectrum of the film grown under the nearly stoichiometric condition, which indicates that ZnTe films of good quality can be grown even at room temperature by this growth technique

  4. Mechanisms of stress generation and relaxation during pulsed laser deposition of epitaxial Fe-Pd magnetic shape memory alloy films on MgO

    International Nuclear Information System (INIS)

    Edler, Tobias; Mayr, S G; Buschbeck, Joerg; Mickel, Christine; Faehler, Sebastian

    2008-01-01

    Mechanical stress generation during epitaxial growth of Fe-Pd thin films on MgO from pulsed laser deposition is a key parameter for the suitability in shape memory applications. By employing in situ substrate curvature measurements, we determine the stress states as a function of film thickness and composition. Depending on composition, different stress states are observed during initial film growth, which can be attributed to different misfits. Compressive stress generation by atomic peening is observed in the later stages of growth. Comparison with ex situ x-ray based strain measurements allows integral and local stress to be distinguished and yields heterogeneities of the stress state between coherent and incoherent regions. In combination with cross-sectional TEM measurements the relevant stress relaxation mechanism is identified to be stress-induced martensite formation with (111) twinning

  5. Dynamic mechanical analysis of single walled carbon nanotubes/polymethyl methacrylate nanocomposite films

    International Nuclear Information System (INIS)

    Badawi, Ali; Al Hosiny, N.

    2015-01-01

    Dynamic mechanical properties of nanocomposite films with different ratios of single walled carbon nanotubes/polymethyl methacrylate (SWCNTs/PMMA) are studied. Nanocomposite films of different ratios (0, 0.5, 1.0, and 2.0 weight percent (wt%)) of SWCNTs/PMMA are fabricated by using a casting technique. The morphological and structural properties of both SWCNT powder and SWCNTs/PMMA nanocomposite films are investigated by using a high resolution transmission electron microscope and x-ray diffractometer respectively. The mechanical properties including the storage modulus, loss modulus, loss factor (tan δ) and stiffness of the nanocomposite film as a function of temperature are recorded by using a dynamic mechanical analyzer at a frequency of 1 Hz. Compared with pure PMMA film, the nanocomposite films with different ratios of SWCNTs/PMMA are observed to have enhanced storage moduli, loss moduli and high stiffness, each of which is a function of temperature. The intensity of the tan δ peak for pure PMMA film is larger than those of the nanocomposite films. The glass transition temperature (T g ) of SWCNTs/PMMA nanocomposite film shifts towards the higher temperature side with respect to pure PMMA film from 91.2 °C to 99.5 °C as the ratio of SWCNTs/PMMA increases from 0 to 2.0 wt%. (paper)

  6. Dynamic mechanical behaviour of nanoparticle loaded biodegradable PVA films for vaginal drug delivery.

    Science.gov (United States)

    Traore, Yannick L; Fumakia, Miral; Gu, Jijin; Ho, Emmanuel A

    2018-03-01

    In this study, we investigated the viscoelastic and mechanical behaviour of polyvinyl alcohol films formulated along with carrageenan, plasticizing agents (polyethylene glycol and glycerol), and when loaded with nanoparticles as a model for potential applications as microbicides. The storage modulus, loss modulus and glass transition temperature were determined using a dynamic mechanical analyzer. Films fabricated from 2% to 5% polyvinyl alcohol containing 3 mg or 5 mg of fluorescently labeled nanoparticles were evaluated. The storage modulus and loss modulus values of blank films were shown to be higher than the nanoparticle-loaded films. Glass transition temperature determined using the storage modulus, and loss modulus was between 40-50℃ and 35-40℃, respectively. The tensile properties evaluated showed that 2% polyvinyl alcohol films were more elastic but less resistant to breaking compared to 5% polyvinyl alcohol films (2% films break around 1 N load and 5% films break around 7 N load). To our knowledge, this is the first study to evaluate the influence of nanoparticle and film composition on the physico-mechanical properties of polymeric films for vaginal drug delivery.

  7. Pectin- and gelatin-based film: effect of gamma irradiation on the mechanical properties and biodegradation

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Cheorun; Kang, Hojin; Lee, Na Young; Kwon, Joong Ho; Byun, Myung Woo E-mail: mwbyun@kaeri.re.kr

    2005-04-01

    Agricultural by-products, pectin and gelatin, were used to prepare a biodegradable film. The film casting solution including the pectin and gelatin was irradiated at 0, 10, 20, and 30 kGy to investigate the irradiation effect on the mechanical properties of the film. The tensile strength of the 10 kGy-irradiated film was the highest among the treatments but the elongation at break, water vapour permeability, and swelling ratio were the lowest. Hunter color L*- and a*-values decreased but the b*-value increased as the irradiation dose increased. The total organic carbon content produced from the Paenibacillus polymyxa and Pseudomonas aeruginosa also showed that the film of 10 kGy-irradiated was lower than those of 0, 20, and 30 kGy-irradiated films. In conclusion, irradiation of the film casting solution at 10 kGy increased the mechanical properties of the pectin and gelatin based film. To manufacture the film by agricultural by-products, however, the irradiation dose of the film casting solution should be determined to achieve better mechanical properties.

  8. Determining the Mechanism of Low Temperature Graphene Growth

    Science.gov (United States)

    2014-05-27

    of three films (still on copper foils) in figure 2a, figure 2b and figure 2c, respectively. Figure 2a clearly shows the graphene flakes for a growth...shown in figure 3c. The coalesced graphene flakes fully cover the surface of the copper foil after synthesizing for exposure times longer than 30 s, as...Nickel and copper are the two most chosen catalysts to promote graphene formation [1, 16]. Due to the low carbon solubility in nickel or copper

  9. Buffer Film Assisted Growth of Dense MWCNTs on Copper Foils for Flexible Electrochemical Applications

    Directory of Open Access Journals (Sweden)

    Udomdej Pakdee

    2017-01-01

    Full Text Available The novel Inconel buffer films were prepared on copper foils using unbalance direct current (DC magnetron sputtering. These films were employed as buffer layers for supporting the dense growth of multiwalled carbon nanotubes (MWCNTs. Thermal chemical vapor deposition (CVD with metal alloys such as stainless steel (SS type 304 films was considered to synthesize MWCNTs. To understand the effectiveness of these buffer films, the MWCNTs grown on buffer-free layer were carried out as a comparison. The main problem such as the diffusion of catalysts into the oxide layer of metal substrate during the CVD process was solved together with a creation of good electrical contact between substrate and nanotubes. The morphologies, crystallinities, and electrochemical behaviors of MWCNTs grown on Inconel buffer films with 304 SS catalysts revealed the better results for applying in flexible electrochemical applications.

  10. Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

    Directory of Open Access Journals (Sweden)

    Atsushi Sugihara

    2015-06-01

    Full Text Available Mn\\(_3\\Ge has a tetragonal Heusler-like D0\\(_{22}\\ crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\\(_3\\Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\\(_3\\Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\\(_3\\Ge on Rh show somewhat small coercivity (\\(H_{\\rm c}\\ = 12.6 kOe and a large perpendicular magnetic anisotropy (\\(K_{\\rm u}\\ = 11.6 Merg/cm\\(^3\\, comparable to that of the film grown on Cr.

  11. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth.

    Science.gov (United States)

    Brower, Landon J; Gentry, Lauren K; Napier, Amanda L; Anderson, Mary E

    2017-01-01

    Integration of surface-anchored metal-organic frameworks (surMOFs) within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm) initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm) covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  12. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth

    Directory of Open Access Journals (Sweden)

    Landon J. Brower

    2017-11-01

    Full Text Available Integration of surface-anchored metal-organic frameworks (surMOFs within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  13. Thermo-Mechanical Fatigue Crack Growth of RR1000.

    Science.gov (United States)

    Pretty, Christopher John; Whitaker, Mark Thomas; Williams, Steve John

    2017-01-04

    Non-isothermal conditions during flight cycles have long led to the requirement for thermo-mechanical fatigue (TMF) evaluation of aerospace materials. However, the increased temperatures within the gas turbine engine have meant that the requirements for TMF testing now extend to disc alloys along with blade materials. As such, fatigue crack growth rates are required to be evaluated under non-isothermal conditions along with the development of a detailed understanding of related failure mechanisms. In the current work, a TMF crack growth testing method has been developed utilising induction heating and direct current potential drop techniques for polycrystalline nickel-based superalloys, such as RR1000. Results have shown that in-phase (IP) testing produces accelerated crack growth rates compared with out-of-phase (OOP) due to increased temperature at peak stress and therefore increased time dependent crack growth. The ordering of the crack growth rates is supported by detailed fractographic analysis which shows intergranular crack growth in IP test specimens, and transgranular crack growth in 90° OOP and 180° OOP tests. Isothermal tests have also been carried out for comparison of crack growth rates at the point of peak stress in the TMF cycles.

  14. Thermo-Mechanical Fatigue Crack Growth of RR1000

    Directory of Open Access Journals (Sweden)

    Christopher John Pretty

    2017-01-01

    Full Text Available Non-isothermal conditions during flight cycles have long led to the requirement for thermo-mechanical fatigue (TMF evaluation of aerospace materials. However, the increased temperatures within the gas turbine engine have meant that the requirements for TMF testing now extend to disc alloys along with blade materials. As such, fatigue crack growth rates are required to be evaluated under non-isothermal conditions along with the development of a detailed understanding of related failure mechanisms. In the current work, a TMF crack growth testing method has been developed utilising induction heating and direct current potential drop techniques for polycrystalline nickel-based superalloys, such as RR1000. Results have shown that in-phase (IP testing produces accelerated crack growth rates compared with out-of-phase (OOP due to increased temperature at peak stress and therefore increased time dependent crack growth. The ordering of the crack growth rates is supported by detailed fractographic analysis which shows intergranular crack growth in IP test specimens, and transgranular crack growth in 90° OOP and 180° OOP tests. Isothermal tests have also been carried out for comparison of crack growth rates at the point of peak stress in the TMF cycles.

  15. Enhancing mechanical properties of chitosan films via modification with vanillin.

    Science.gov (United States)

    Zhang, Zhi-Hong; Han, Zhong; Zeng, Xin-An; Xiong, Xia-Yu; Liu, Yu-Jia

    2015-11-01

    The vanillin/chitosan composite films were prepared using the solvent evaporation method. The properties of the films including optical property, water vapor permeability (WVP), tensile strength (TS) and elongation at break (%E) were studied to investigate the effect of cross-linking agent of vanillin on chitosan films by thermogravimetric analysis (TGA), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Fourier transform infrared spectrum (FT-IR). Results showed that the TS of composite films increased by 53.3% and the WVP decreased by 36.5% compared with pure chitosan film that were due to the formation of the dense network structure by FT-IR spectra. There were almost no changes of the thermal stability of the composite films compared with the pure chitosan film by TGA analysis. In addition, from the SEM images, it could be seen that the film with addition of vanillin with 0.5-10% concentration exhibited good compatibility. Copyright © 2015 Elsevier B.V. All rights reserved.

  16. The growth and characterisation of YBa2Cu3O7-δ superconducting thin films

    International Nuclear Information System (INIS)

    McCurry, M.P.

    1999-02-01

    The normal state properties of YBa 2 Cu 3 O 7-δ (YBCO) are not completely understood. It is known that the oxygen doping play a large part in determining these properties. The optical conductivity of a series of c-axis YBCO thin films was investigated in this thesis. The films were grown on (100) MgO substrates using a pulsed laser deposition (PLD) system and characterised using X-ray diffraction, atomic force microscopy and resistance-temperature measurements. The optimum parameters for c-axis YBCO thin film growth were determined by systematically varying the main deposition parameters. The best quality films had a transition temperature T c ∼ 88K, with a transition width ∼ 1-2K. Critical current densities of J c ∼ 10 7 Acm -2 were obtained. Substrate and target morphology affected the quality of the films. a-axis YBCO films were grown using a PrBa 2 Cu 3 O 7 (PBCO) film as a template for growth. The choice of target and substrate were again important, with a smooth substrate essential for the multi-layering. T c ∼ 83K and J c ∼ 10 6 Acm -2 were the best values obtained. These values compare with data published on the 'best' YBCO films deposited by PLD. A series of c-axis films was controllably under-doped using an ex-situ annealing process. The as-grown films were assumed to be optimally doped with δ ∼ 0.05. Doping levels in the 'metallic' region, 0.05 -2 mbar. Another tetragonal film was obtained by cooling it after deposition in a nitrogen atmosphere. Neither had a superconducting transition; the c-axes of both films were elongated. The films could be successfully re-doped with oxygen, with a subsequent return to optimal values of T c and c-axis lattice parameter. The dielectric function of optimally doped and under-doped c-axis YBCO films was determined using the attenuated total reflection (ATR) technique. This data was obtained at a fixed frequency of 2984 cm -1 , (0.366eV), at temperatures ranging from 300K to 80K. The data was analysed in

  17. The Influence of Thermic Plastic Films on Vegetative and Reproductive Growth of Iceberg Lettuce 'Dublin'

    OpenAIRE

    Wael M. Semida; P. Hadley; W. Sobeih; N. A. El-Sawah; M. A. S. Barakat

    2013-01-01

    Photoselective plastic films with thermic properties are now available so that greenhouses clad with such plastics exhibit a higher degree of “Greenhouse Effect” with a consequent increase in night time temperature. In this study, we investigate the potential benefits of a range of thermic plastic films used as greenhouse cover materials on the vegetative and reproductive growth and development of Iceberg lettuce (Lactuca sativa L). Transplants were grown under thermic fi...

  18. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  19. Growth of fine holes in polyethylenenaphthalate film irradiated by fission fragments

    International Nuclear Information System (INIS)

    Komaki, Y.; Tsujimura, S.

    1976-01-01

    Growth of fine holes by chemical etching in polyethylenenaphthalate films exposed to fission fragments were examined by measuring gas flow through the films. The etching rate along tracks, the radial etching rate, and the bulk etching rate were determined at effective hole diameters of 100 to 1000 A and hole densities of approximately 10 8 cm -2 . The effects of ethanol and surfactants on the etching rates were studied from the viewpoint of attaining less-tapered holes

  20. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  1. Investigation of Carboxymethyl Cellulose (CMC on Mechanical Properties of Cold Water Fish Gelatin Biodegradable Edible Films

    Directory of Open Access Journals (Sweden)

    Mahsa Tabari

    2017-05-01

    Full Text Available The tendency to use biocompatible packages, such as biodegradable films, is growing since they contain natural materials, are recyclable and do not cause environmental pollution. In this research, cold water fish gelatin and carboxymethyl cellulose were combined for use in edible films. Due to its unique properties, gelatin is widely used in creating gel, and in restructuring, stabilizing, emulsifying, and forming foam and film in food industries. This research for the first time modified and improved the mechanical properties of cold water fish gelatin films in combination with carboxymethyl cellulose. Cold water fish gelatin films along with carboxymethyl cellulose with concentrations of 0%, 5%, 10%, 20% and 50% were prepared using the casting method. The mechanical properties were tested by the American National Standard Method. Studying the absorption isotherm of the resulting composite films specified that the humidity of single-layer water decreased (p < 0.05 and caused a reduction in the equilibrium moisture of these films. In the mechanical testing of the composite films, the tensile strength and Young’s modulus significantly increased and the elongation percent significantly decreased with the increase in the concentration of carboxymethyl cellulose. Considering the biodegradability of the films and the improvement of their mechanical properties by carboxymethyl cellulose, this kind of packaging can be used in different industries, especially the food industry, as an edible coating for packaging food and agricultural crops.

  2. Grain boundaries and mechanical properties of nanocrystalline diamond films.

    Energy Technology Data Exchange (ETDEWEB)

    Busmann, H.-G.; Pageler, A.; Gruen, D. M.

    1999-08-06

    Phase-pure nanocrystalline diamond thin films grown from plasmas of a hydrogen-poor carbon argon gas mixture have been analyzed regarding their hardness and elastic moduli by means of a microindentor and a scanning acoustic microscope.The films are superhard and the moduli rival single crystal diamond. In addition, Raman spectroscopy with an excitation wavelength of 1064 nm shows a peak at 1438 l/cm and no peak above 1500 l/cm, and X-ray photoelectron spectroscopy a shake-up loss at 4.2 eV. This gives strong evidence for the existence of solitary double bonds in the films. The hardness and elasticity of the films then are explained by the assumption, that the solitary double bonds interconnect the nanocrystals in the films, leading to an intergrain boundary adhesion of similar strength as the intragrain diamond cohesion. The results are in good agreement with recent simulations of high-energy grain boundaries.

  3. Mechanical properties of phosphorus-doped polysilicon films

    CERN Document Server

    Lee, S W; Kim, J P; Park, S J; Yi, S W; Cho, D I; Kim, J J

    1998-01-01

    Polysilicon films deposited by low pressure chemical vapor deposition (LPCVD) are the most widely used structural material in microelectromechanical systems (MEMS). However, the structural properties of LPCVD polysilicon films are known to vary significantly, depending on deposition conditions as well as post-deposition processes. This paper investigates the effects of phosphorus doping and texture on Young's modulus of polysilicon films. Polysilicon films are deposited at 585 .deg. C, 605 .deg. C, and 625 .deg. C to a thickness of 2 mu m. Specimens with varying phosphorus doping levels are prepared by the diffusion process at various temperatures and times using both POCl sub 3 and phosphosilicate glass (PSG) source. Texture is measured using an X-ray diffractometer. Young's modulus is estimated from the average values of the resonant frequencies measured from four-different size lateral resonators. Our results show that Young's modulus of diffusion doped polysilicon films decreases with increasing doping co...

  4. Room temperature mushrooming of gallium wires and its growth mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, P.; Shen, L.W.; Ouyang, J.; Zhang, Y.M.; Wu, S.Q. [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Sun, Z.M., E-mail: sunzhengming@gmail.com [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569 (Japan)

    2015-01-15

    Highlights: • Fast spontaneous growth of Ga wires (∼200 nm/s) from a composite system of Cr{sub 2}GaC–Ga is reported. • The fact that Ga wires’ growth phenomena on the composite share most features with metals whiskers with metal/alloy substrates suggests the same mechanism highly likely operating with both systems. • Compelling evidences indicate that the popular stress-based mechanism developed in metal/alloy systems does not hold water in the Cr{sub 2}GaC–Ga composite system. • A new catalysis mechanism is proposed, in which the cleavage planes of Cr{sub 2}GaC grains act as a catalyst for the Ga wires growth. • The new findings in this composite system would lead a new route to address this old problem, and it might see significance in the electronics industry. On the other hand, it is likely to be harnessed to engineer a promising and facile route to prepare various metal wires in large scale. - Abstract: Spontaneous growth of Ga wires at high rate (∼200 nm/s) from a composite system of Cr{sub 2}GaC (a MAX phase) and Ga is presented. A Ga wire growth mechanism based on a catalysis model, which involves fractured Cr{sub 2}GaC grains as the catalyst, is proposed. Regarding the morphologies and the incubation time of the Ga wires, this system shares most features with metal/alloy substrates, such as tin and zinc, where the whiskering phenomenon has been well established and has resisted interpretation for 60+ years. The same growth mechanism is thus considered to operate across different substrates, including the composite one in this study. However, the experimental findings in this composite system oppose the popular stress-based mechanism for the whisker growth with metal/alloy substrates, and provide new sights on this phenomenon. In addition, compelling evidences strongly indicate that fractured Cr{sub 2}GaC grains produced by ball milling initiated the growth of Ga wires, like a ‘catalyst’, and the pristine Cr{sub 2}GaC grains do not

  5. Growth of ZnO nanostructures on Au-coated Si: Influence of growth temperature on growth mechanism and morphology

    DEFF Research Database (Denmark)

    Kumar, Rajendra; McGlynn, E.; Biswas, M.

    2008-01-01

    ZnO nanostructures were grown on Au-catalyzed Si silicon substrates using vapor phase transport at growth temperatures from 800 to 1150 degrees C. The sample location ensured a low Zn vapor supersaturation during growth. Nanostructures grown at 800 and 850 degrees C showed a faceted rodlike...... growth tended to dominate resulting in the formation of a porous, nanostructured morphology. In all cases growth was seen only on the Au-coated region. Our results show that the majority of the nanostructures grow via a vapor-solid mechanism at low growth temperatures with no evidence of Au nanoparticles...

  6. Growth and characterization of magnetite-maghemite thin films by the dip coating method

    Energy Technology Data Exchange (ETDEWEB)

    Velásquez, A. A., E-mail: avelas26@eafit.edu.edu.co; Arnedo, A. [Universidad EAFIT, Grupo de Electromagnetismo Aplicado (Colombia)

    2017-11-15

    We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite (γ-Fe{sub 2}O{sub 3}) and two doublets attributed to superparamagnetic magnetite (Fe{sub 3}O{sub 4}), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

  7. Growth and characterization of magnetite-maghemite thin films by the dip coating method

    International Nuclear Information System (INIS)

    Velásquez, A. A.; Arnedo, A.

    2017-01-01

    We present the process of growth and characterization of magnetite-maghemite thin films obtained by the dip coating method. The thin films were deposited on glass substrates, using a ferrofluid of nanostructured magnetite-maghemite particles as precursor solution. During the growth of the films the following parameters were controlled: number of dips of the substrates, dip velocity of the substrates and drying times. The films were characterized by Atomic Force Microscopy, Scanning Elelectron Microscopy, four-point method for resistance measurement, Room Temperature Mössbauer Spectroscopy and Hall effect. Mössbauer measurements showed the presence of a sextet attributed to maghemite (γ-Fe_2O_3) and two doublets attributed to superparamagnetic magnetite (Fe_3O_4), indicating a distribution of oxidation states of the iron as well as a particle size distribution of the magnetic phases in the films. Atomic force microscopy measurements showed that the films cover quasi uniformly the substrates, existing in them some pores with sub-micron size. Scanning Electron Microscopy measurements showed a uniform structure in the films, with spherical particles with size around 10 nm. Voltage versus current measurements showed an ohmic response of the films for currents between 0 and 100 nA. On the other hand, Hall effect measurements showed a nonlinear response of the Hall voltage with the magnetic flux density applied perpendicular to the plane of the films, however the response is fairly linear for magnetic flux densities between 0.15 and 0.35 T approximately. The results suggest that the films are promising for application as magnetic flux density sensors.

  8. Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

    Science.gov (United States)

    Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

    2014-03-01

    In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

  9. Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing.

    Science.gov (United States)

    Blackwell, Sabrina; Smith, Roger; Kenny, Steven D; Walls, John M; Sanz-Navarro, Carlos F

    2013-04-03

    deposited film and therefore resulting in more stacking faults and phase boundaries. The methods used allow analysis of key mechanisms that occur during the growth process and give hints as to the optimum conditions under which complete crystalline layers can form.

  10. Mechanical, barrier and morphological properties of pea starch and peanut protein isolate blend films.

    Science.gov (United States)

    Sun, Qingjie; Sun, Cuixia; Xiong, Liu

    2013-10-15

    Mechanical, barrier and morphological properties of edible films based on blends of Pea starch (PS) and Peanut protein isolate (PPI) plasticized with glycerol (30%, w/w) were investigated. As PPI ratio in PS/PPI blends increased, the thickness of films decreased, the opacity slightly elevated and color intensified. The addition of PPI to the PS film significantly reduced tensile strength from 5.44 MPa to 3.06 MPa, but increased elongation from 28.56% to 98.12% with the incorporation of PPI into PS at 50% level. Film solubility value fell from 22.31% to 9.78% upon the incorporation of PPI ranged from 0 to 50% level. When PPI was added into PS film at 40% level, the WVP and WVTR of the films markedly dropped from 11.18% to 4.19% and 6.16 to 1.95%, respectively. Scanning electron microscopy (SEM) of the surface of films showed that many swollen starch granules were presented in the 100% PS film, while 100% PPI film was observed to have rougher surfaces with presence of pores or cavities. The PS/PPI blend films upon the incorporation of PPI at 20% and 50% level were not homogeneous. However, the smoother film surface was observed in PS/PPI blend films with the addition of PPI at 40% level. SEM image of the cross-sections of the films revealed that the 100% PS film showed a uniform and compact matrix without disruption, and pore formation and 100% PPI film displayed a smooth structure. Rougher and flexible network was shown in blend film with the addition of PPI reaching 40% level. Copyright © 2013. Published by Elsevier Ltd.

  11. Epitaxial growth of textured YBa2Cu3O7-δ films on silver

    International Nuclear Information System (INIS)

    Liu Dan-Min; Liu Wei-Peng; Suo Hong-Li; Zhou Mei-Ling

    2005-01-01

    YBa 2 Cu 3 O 7-δ (YBCO) films were deposited on (100), (110) and (111) oriented silver single crystals and {100} left angle 100 right angle, {110} left angle 211 right angle, {110} left angle 100 right angle +{110} left angle 011 right angle {110} left angle 011 right angle and {012} left angle 100 right angle textured Ag substrates using pulsed laser deposition. The relationship between the epitaxial growth YBCO film and silver substrate has been determined. It is shown that among polycrystalline Ag substrates, {110} left angle 011 right angle textured tape is suitable for the deposition of YBCO thin films having strong texture. (orig.)

  12. Growth of high Tc Bi-Sr-Ca-Cu-O thick films

    International Nuclear Information System (INIS)

    Chaudhry, Sangeeta; Khare, Neeraj; Gupta, A.K.; Nagpal, K.C.; Ojha, V.N.; Reddy, G.S.N.; Tomar, V.S.

    1991-01-01

    Thick films of Bi-Sr-Ca-Cu-O were deposited on (100) MgO substrates by screen-printing technique with the starting composition 1112. To attain the superconducting state, the films were subjected to two-step heat-treatment. R-T and XRD have been studied for films annealed at different durations of the second step. Initially T c (R=O) increased from 77 to 103 K as the annealing duration was increased after which T c decreased. Kinetics of the growth of high T c phase is discussed in the light of results. (author). 7 refs., 2 figs., 1 tab

  13. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  14. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  15. Elucidation of the Fundamental Mechanisms of Diamond Film Growth

    National Research Council Canada - National Science Library

    Blumenthal, Rik

    1998-01-01

    .... The technique is based on the release of a short pulse of noble gas into the near vacuum. As the pulse expands, the molecular and atomic species present in the plasma are swept into the rapidly expanding noble gas pulse...

  16. Thin film evolution equations from (evaporating) dewetting liquid layers to epitaxial growth

    International Nuclear Information System (INIS)

    Thiele, U

    2010-01-01

    In the present contribution we review basic mathematical results for three physical systems involving self-organizing solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting, evaporation/condensation or epitaxial growth, respectively. We highlight similarities and differences of the three systems based on the observation that in certain limits all of them may be described using models of similar form, i.e. time evolution equations for the film thickness profile. Those equations represent gradient dynamics characterized by mobility functions and an underlying energy functional. Two basic steps of mathematical analysis are used to compare the different systems. First, we discuss the linear stability of homogeneous steady states, i.e. flat films, and second the systematics of non-trivial steady states, i.e. drop/hole states for dewetting films and quantum-dot states in epitaxial growth, respectively. Our aim is to illustrate that the underlying solution structure might be very complex as in the case of epitaxial growth but can be better understood when comparing the much simpler results for the dewetting liquid film. We furthermore show that the numerical continuation techniques employed can shed some light on this structure in a more convenient way than time-stepping methods. Finally we discuss that the usage of the employed general formulation does not only relate seemingly unrelated physical systems mathematically, but does allow as well for discussing model extensions in a more unified way.

  17. Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Zhou Kai

    2010-01-01

    Full Text Available Abstract The structure of vertically aligned carbon nanotubes (CNTs severely depends on the properties of pre-prepared catalyst films. Aiming for the preparation of precisely controlled catalyst film, atomic layer deposition (ALD was employed to deposit uniform Fe2O3 film for the growth of CNT arrays on planar substrate surfaces as well as the curved ones. Iron acetylacetonate and ozone were introduced into the reactor alternately as precursors to realize the formation of catalyst films. By varying the deposition cycles, uniform and smooth Fe2O3 catalyst films with different thicknesses were obtained on Si/SiO2 substrate, which supported the growth of highly oriented few-walled CNT arrays. Utilizing the advantage of ALD process in coating non-planar surfaces, uniform catalyst films can also be successfully deposited onto quartz fibers. Aligned few-walled CNTs can be grafted on the quartz fibers, and they self-organized into a leaf-shaped structure due to the curved surface morphology. The growth of aligned CNTs on non-planar surfaces holds promise in constructing hierarchical CNT architectures in future.

  18. An XPS study of pulsed plasma polymerised allyl alcohol film growth on polyurethane

    Energy Technology Data Exchange (ETDEWEB)

    Watkins, Lucy [Department of Chemistry, University of York, Heslington, York YO10 5DD (United Kingdom); Bismarck, Alexander [Department of Chemical Engineering, Polymer and Composite Engineering (PaCE) Group, Imperial College London, London SW7 2AZ (United Kingdom); Lee, Adam F. [Department of Chemistry, University of York, Heslington, York YO10 5DD (United Kingdom); Wilson, Darren [Smith and Nephew Research Centre, York Science Park, Heslington, York YO10 5DF (United Kingdom); Wilson, Karen [Department of Chemistry, University of York, Heslington, York YO10 5DD (United Kingdom)]. E-mail: kw13@york.ac.uk

    2006-09-30

    The growth of highly functionalised poly allyl alcohol films by pulsed plasma polymerisation of CH{sub 2} =CHCH{sub 2}OH on biomedical grade polyurethane has been followed by X-ray photoelectron spectroscopy (XPS) and contact angle measurements. Film thickness is observed to increase approximately linearly with plasma modification time, suggesting a layer-by-layer growth mode of poly allyl alcohol. Water contact angle measurements reveal the change in the surface free energy of wetting decreases linearly with plasma modification up to the monolayer point after which a constant limiting value of -24 mJ m{sup -2} was attained. Films prepared at 20 W plasma power with a duty cycle of 10 {mu}s:500 {mu}s exhibit a high degree of hydroxyl (-OH) retention with minimal fragmentation of the monomer observed. Increasing the plasma power up to 125 W is found to improve -OH retention at the expense of ether formation generating films close to the monomer stoichiometry. Duty cycle plays an important role in controlling both film composition and thickness, with longer off times increasing -OH retention, while longer on times enhance allyl alcohol film growth.

  19. Epitaxial growth and properties of YBaCuO thin films

    International Nuclear Information System (INIS)

    Geerk, J.; Linker, G.; Meyer, O.

    1989-08-01

    The growth quality of YBaCuO thin films deposited by sputtering on different substrates (Al 2 O 3 , MgO, SrTiO 3 , Zr(Y)O 2 ) has been studied by X-ray diffraction and channeling experiments as a function of the deposition temperature. Besides the substrate orientation, the substrate temperature is the parameter determining whether films grow in c-, a-, (110) or mixed directions. Epitaxial growth correlates with high critical current values in the films of up to 5.5x10 6 A/cm 2 at 77 K. Ultrathin films with thicknesses down to 2 nm were grown revealing three-dimensional superconducting behaviour. Films on (100) SrTiO 3 of 9 nm thickness and below are partially strained indicating commensurate growth. From the analysis of the surface disorder 1 displaced Ba atom per Ba 2 Y row was obtained indicating that the disordered layer thickness is about 0.6 nm. Tunnel junctions fabricated on these films reveal gap-like structures near ±16 mV and ±30 mV. (orig.) [de

  20. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

    Directory of Open Access Journals (Sweden)

    Robert J. Lovelett

    2016-04-01

    Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

  1. Mechanism of Fatigue Crack Growth of Bridge Steel Structures

    Directory of Open Access Journals (Sweden)

    Zhu H.

    2016-12-01

    Full Text Available This study was carried out on the background of Sutong Bridge project based on fracture mechanics, aiming at analyzing the growth mechanism of fatigue cracks of a bridge under the load of vehicles. Stress intensity factor (SIF can be calculated by various methods. Three steel plates with different kinds of cracks were taken as the samples in this study. With the combination of finite element analysis software ABAQUS and the J integral method, SIF values of the samples were calculated. After that, the extended finite element method in the simulation of fatigue crack growth was introduced, and the simulation of crack growth paths under different external loads was analyzed. At last, we took a partial model from the Sutong Bridge and supposed its two dangerous parts already had fine cracks; then simulative vehicle load was added onto the U-rib to predict crack growth paths using the extended finite element method.

  2. Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yan Dawei; Wu Weidong; Zhang Hong; Wang Xuemin; Zhang Hongliang; Zhang Weibin; Xiong Zhengwei; Wang Yuying; Shen Changle; Peng Liping; Han Shangjun; Zhou Minjie

    2011-01-01

    In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.

  3. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    CERN Document Server

    Ellmer, K; Weiss, V; Rossner, H

    2001-01-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  4. Alyssum homolocarpum seed gum-polyvinyl alcohol biodegradable composite film: Physicochemical, mechanical, thermal and barrier properties.

    Science.gov (United States)

    Monjazeb Marvdashti, Leila; Koocheki, Arash; Yavarmanesh, Masoud

    2017-01-02

    Films made from Alyssum homolocarpum seeds gum (AHSG) have poor mechanical and barrier (to oxygen) properties. In the present study poly vinyl alcohol (PVA) was used to improve the physicochemical properties of AHSG films. Results indicated that the addition of PVA significantly increased the moisture content, solubility, elongation at break (EB) and transparency while it decreased the density, oxygen permeability, chroma, water contact angle and Young modulus of AHSG based films. Films with higher AHSG to PVA ratios had lower water vapor permeability (WVP). The light barrier measurements presented low values of transparency at 600nm for PVA/AHSG films, indicating that films were very transparent while they had excellent barrier properties against UV light. Results for FTIR, DSC and SEM showed a clear interaction between PVA and AHSG, forming a new material. These results indicated that PVA/AHSG blend films had good compatibility. Copyright © 2016 Elsevier Ltd. All rights reserved.

  5. Effect of Plasticizers on Physicochemical and Mechanical Properties of Chitosan-Gelatin Films

    Science.gov (United States)

    Manshor, N. Mohammed; Rezali, M. I.; Jai, J.; Yahya, A.

    2018-05-01

    Composite chitosan-gelatin films were produced to investigate the effect of plasticizer and composition of chitosan and gelatin on physicochemical and mechanical properties of the films. The films were prepared according to ratio of chitosan: gelatin of 1:1, 1:2 and 2:1. For each film, glycerol, sorbitol and sucrose were added as plasticizer. The film forming solution was poured on a glass plate and dried for 12 hours in an oven at 60°C. The highest tensile strength was 4.04 MPa for films of ratio 2:1 plasticized with glycerol compared to sorbitol and sucrose which were 3.94 MPa and 3.84 MPa, respectively. However, films plasticized with sorbitol at ratio of 1:2 had the highest percent elongation which was 68.20%, followed by glycerol and sucrose which were 26.51% and 24.08%, respectively.

  6. Temperature effects on the growth and electrical properties of Er{sub 2}O{sub 3} films on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ji, T.; Nie, T.X.; Cui, J. [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Fang, Z.B. [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Yang, X.J.; Fan, Y.L.; Zhong, Z.Y. [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Jiang, Z.M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China)

    2012-02-01

    Er{sub 2}O{sub 3} films were grown on Ge (001) substrates at different temperatures by molecular beam epitaxy using metallic Er and molecular oxygen sources with otherwise identical conditions. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the microstructures and compositions of the films. The film deposited at room temperature is found to be composed of an Er{sub 2}O{sub 3} layer and an ErGe{sub x}O{sub y} interface layer with a thickness of 5.5 nm; the film grown at 300 Degree-Sign C has a mixed structure of Er{sub 2}O{sub 3} and ErGe{sub x}O{sub y} and the thickness was found to be reduced to 2.2 nm; the film grown at 450 Degree-Sign C becomes much rougher with voids formed underneath the film, having a mixed structure of three compounds of Er{sub 2}O{sub 3}, GeO and ErGe{sub x}O{sub y}. The growth mechanisms of the films at different temperatures are suggested. Current images obtained by tunneling atomic force microscopy show that the film grown at 450 Degree-Sign C has much more leaky spots than those grown at RT and 300 Degree-Sign C, which may arise from the formation of volatile GeO in the film.

  7. Epitaxial growth mechanisms of graphene and effects of substrates

    OpenAIRE

    Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

    2012-01-01

    The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-hepta...

  8. Rational control on floating catalysts for the growth of carbon nanotube assemblies: From vertically aligned carbon nanotube arrays to carbon nanotube films

    International Nuclear Information System (INIS)

    Chen, Hongyuan; Chen, Minghai; Zhang, Yongyi; Li, Qingwen

    2015-01-01

    Graphical abstract: - Highlights: • Floating catalyst CVD for the growth of CNT films and arrays was investigated. • The structure of CNT array grown in floating catalyst CVD was revealed. • Temperature was proved as a key for the growth of different CNT assemblies. • The increase of growth temperature induced the growth of single-walled CNT film. - Abstract: Floating catalyst chemical vapor deposition (FCCVD) has been widely used for the growth of various carbon nanotube (CNT) macrostructures, mainly including vertically aligned CNT (VACNT) arrays and none-woven CNT films. However, it is still unclear for the reason why these CNT macrostructures with largely different morphologies were received via the similar method. In this research, it revealed that the growth temperature largely affected the nucleation status of floating catalysts and thus controlled the morphologies of CNT macrostructures from VACNT arrays to none-woven CNT films. In low temperatures (below 800 °C), VACNTs were grown by bottom-up mechanism with several CNTs, but not one individual from bottom to up along the array height direction. Furthermore, VACNT arrays were only grown on some substrates that can induce iron atoms aggregating to catalyst particles with a suitable size. When increasing the growth temperature higher than 800 °C, more catalyst particles were nucleated in the gas flow, which induced the formation of none-woven CNT films composed of thin CNTs (single-walled CNTs and double-walled CNTs). This research was significative for understanding CNT growth mechanism via FCCVD process and the synthesis of different CNT macrostructures by this strategy.

  9. Rational control on floating catalysts for the growth of carbon nanotube assemblies: From vertically aligned carbon nanotube arrays to carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hongyuan; Chen, Minghai, E-mail: mhchen2008@sinano.ac.cn; Zhang, Yongyi; Li, Qingwen

    2015-10-30

    Graphical abstract: - Highlights: • Floating catalyst CVD for the growth of CNT films and arrays was investigated. • The structure of CNT array grown in floating catalyst CVD was revealed. • Temperature was proved as a key for the growth of different CNT assemblies. • The increase of growth temperature induced the growth of single-walled CNT film. - Abstract: Floating catalyst chemical vapor deposition (FCCVD) has been widely used for the growth of various carbon nanotube (CNT) macrostructures, mainly including vertically aligned CNT (VACNT) arrays and none-woven CNT films. However, it is still unclear for the reason why these CNT macrostructures with largely different morphologies were received via the similar method. In this research, it revealed that the growth temperature largely affected the nucleation status of floating catalysts and thus controlled the morphologies of CNT macrostructures from VACNT arrays to none-woven CNT films. In low temperatures (below 800 °C), VACNTs were grown by bottom-up mechanism with several CNTs, but not one individual from bottom to up along the array height direction. Furthermore, VACNT arrays were only grown on some substrates that can induce iron atoms aggregating to catalyst particles with a suitable size. When increasing the growth temperature higher than 800 °C, more catalyst particles were nucleated in the gas flow, which induced the formation of none-woven CNT films composed of thin CNTs (single-walled CNTs and double-walled CNTs). This research was significative for understanding CNT growth mechanism via FCCVD process and the synthesis of different CNT macrostructures by this strategy.

  10. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  11. Drying of latex films and coatings: Reconsidering the fundamental mechanisms

    DEFF Research Database (Denmark)

    Kiil, Søren

    2006-01-01

    The two existing theories describing drying of latex films or coatings are reconsidered. Subsequently, a novel mathematical drying model is presented, the simulations of which can match and explain experimental drying rate data of two previous investigations with latex films. In contrast to previ......The two existing theories describing drying of latex films or coatings are reconsidered. Subsequently, a novel mathematical drying model is presented, the simulations of which can match and explain experimental drying rate data of two previous investigations with latex films. In contrast...... to previous model studies, but in agreement with observations, simulations suggest that during the falling rate period of the drying process of a latex film, a porous skin of partly coalesced latex particles is indeed formed, which limits transport of water vapour from the receding air-liquid interphase...... to the surface of the film. The value of the effective diffusion coefficient of water vapour in the dry and partly coalesced layer (7 x 10(-7) m(2)/s at 19-24 degrees C), the adjustable parameter of the model for the falling rate period, was found to be independent of initial wet film thickness (89-1322 mu m...

  12. Mechanical model for filament buckling and growth by phase ordering.

    Science.gov (United States)

    Rey, Alejandro D; Abukhdeir, Nasser M

    2008-02-05

    A mechanical model of open filament shape and growth driven by phase ordering is formulated. For a given phase-ordering driving force, the model output is the filament shape evolution and the filament end-point kinematics. The linearized model for the slope of the filament is the Cahn-Hilliard model of spinodal decomposition, where the buckling corresponds to concentration fluctuations. Two modes are predicted: (i) sequential growth and buckling and (ii) simultaneous buckling and growth. The relation among the maximum buckling rate, filament tension, and matrix viscosity is given. These results contribute to ongoing work in smectic A filament buckling.

  13. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, C.V. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)]. E-mail: ramanacv@umich.edu; Atuchin, V.V. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kochubey, V.A. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Pokrovsky, L.D. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Shutthanandan, V. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Becker, U. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Ewing, R.C. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T {sub s}) and oxygen partial pressure (pO{sub 2}). The effect of T {sub s} and pO{sub 2} on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T {sub s} and pO{sub 2} on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 deg. C under 62.3% O{sub 2} pressure were stoichiometric and polycrystalline MoO{sub 3}. Films grown at lower pO{sub 2} were non-stoichiometric MoO {sub x} films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO{sub 3} films.

  14. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

  15. Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

    International Nuclear Information System (INIS)

    Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

    2006-01-01

    Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi 3 Fe 5 O 12 (BIG) thin films on (100) and (111) Gd 3 Ga 5 O 12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films

  16. Mechanical and water barrier properties of agar/κ-carrageenan/konjac glucomannan ternary blend biohydrogel films.

    Science.gov (United States)

    Rhim, Jong-Whan; Wang, Long-Feng

    2013-07-01

    Multicomponent hydrogel films composed of agar, κ-carrageenan, konjac glucomannan powder, and nanoclay (Cloisite(®) 30B) were prepared and their mechanical and water barrier properties such as water vapor permeability (WVP), water contact angle (CA), water solubility (WS), water uptake ratio (WUR), water vapor uptake ratio (WVUR) were determined. Mechanical, water vapor barrier, and water resistance properties of the ternary blend film exhibited middle range of individual component films, however, they increased significantly after formation of nanocomposite with the clay. Especially, the water holding capacity of the ternary blend biopolymer films increased tremendously, from 800% to 1681% of WUR for agar and κ-carrageenan films up to 5118% and 5488% of WUR for the ternary blend and ternary blend nanocomposite films, respectively. Water vapor adsorption behavior of films was also tested by water vapor adsorption kinetics and water vapor adsorption isotherms test. Preliminary test result for fresh spinach packaging revealed that the ternary blend biohydrogel films had a high potential for the use as an antifogging film for packaging highly respiring agricultural produce. In addition, the ternary blend nanocomposite film showed an antimicrobial activity against Gram-positive bacteria, Listeria monocytogenes. Copyright © 2013 Elsevier Ltd. All rights reserved.

  17. Preparation of reduced graphene oxide/gelatin composite films with reinforced mechanical strength

    International Nuclear Information System (INIS)

    Wang, Wenchao; Wang, Zhipeng; Liu, Yu; Li, Nan; Wang, Wei; Gao, Jianping

    2012-01-01

    Highlights: ► We used and compared different proportion of gelatin and chitosan as reducing agents. ► The mechanical properties of the films are investigated, especially the wet films. ► The cell toxicity of the composite films as biomaterial is carried out. ► The water absorption capabilities of the composite films also studied. -- Abstract: Graphene oxide (GO) was reduced by chitosan/gelatin solution and added to gelatin (Gel) to fabricate reduced graphene oxide/gelatin (RGO/Gel) films by a solvent-casting method using genipin as cross-linking agent. The structure and properties of the films were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), thermogravimetric analysis (TGA) and UV–vis spectroscopy. The addition of RGO increased the tensile strength of the RGO/Gel films in both dry and wet states, but decreased their elongation at break. The incorperation of RGO also decreased the swelling ability of the films in water. Cell cultures were carried out in order to test the cytotoxicity of the films. The cells grew and reproduced well on the RGO/Gel films, indicating that the addition of RGO has no negative effect on the compatibility of the gelatin. Therefore, the reduced graphene oxide/gelatin composite is a promising biomaterial with excellent mechanical properties and good cell compatibility.

  18. Starch behaviors and mechanical properties of starch blend films with different plasticizers.

    Science.gov (United States)

    Nguyen Vu, Hoang Phuong; Lumdubwong, Namfone

    2016-12-10

    The main objective of the study was to gain insight into structural and mechanical starch behaviors of the plasticized starch blend films. Mechanical properties and starch behaviors of cassava (CS)/and mungbean (MB) (50/50, w/w) starch blend films containing glycerol (Gly) or sorbitol (Sor) at 33% weight content were investigated. It was found that tensile strength TS and %E of the Gly-CSMB films were similar to those of MB films; but%E of all Sor-films was identical. TS of plasticized films increased when AM content and crystallinity increased. When Sor was substituted for Gly, crystallinity of starch films and their TS increased. The CSMB and MB films had somewhat a similar molecular profile and comparable mechanical properties. Therefore, it was proposed the starch molecular profile containing amylopectin with high M¯w, low M¯w of amylose, and the small size of intermediates may impart the high TS and%E of starch films. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. Mechanical and thermal properties of irradiated films based on Tilapia (Oreochromis niloticus) proteins

    Energy Technology Data Exchange (ETDEWEB)

    Sabato, S.F. [Radiation Technology Center, IPEN-CNEN/SP, Av. Lineu Prestes 2242, 05508 900 Sao Paulo, SP (Brazil)], E-mail: sfsabato@ipen.br; Nakamurakare, N.; Sobral, P.J.A. [Food Engineering Department, ZEA/FZEA/USP, Av. Duque de Caxias Norte 225, 13635 900 Pirassununga, SP (Brazil)

    2007-11-15

    Proteins are considered potential material in natural films as alternative to traditional packaging. When gamma radiation is applied to protein film forming solution it resulted in an improvement in mechanical properties of whey protein films. The objective of this work was the characterization of mechanical and thermal properties of irradiated films based on muscle proteins from Nile Tilapia (Oreochromis niloticus). The films were prepared according to a casting technique with two levels of plasticizer: 25% and 45% glycerol and irradiated in electron accelerator type Radiation Dynamics, 0.550 MeV at dose range from 0 to 200 kGy. Thermal properties and mechanical properties were determined using a differential scanning calorimeter and a texture analyzer, respectively. Radiation from electron beam caused a slightly increase on its tensile strength characteristic at 100 kGy, while elongation value at this dose had no reduction.

  20. Mechanical and thermal properties of irradiated films based on Tilapia (Oreochromis niloticus) proteins

    International Nuclear Information System (INIS)

    Sabato, S.F.; Nakamurakare, N.; Sobral, P.J.A.

    2007-01-01

    Proteins are considered potential material in natural films as alternative to traditional packaging. When gamma radiation is applied to protein film forming solution it resulted in an improvement in mechanical properties of whey protein films. The objective of this work was the characterization of mechanical and thermal properties of irradiated films based on muscle proteins from Nile Tilapia (Oreochromis niloticus). The films were prepared according to a casting technique with two levels of plasticizer: 25% and 45% glycerol and irradiated in electron accelerator type Radiation Dynamics, 0.550 MeV at dose range from 0 to 200 kGy. Thermal properties and mechanical properties were determined using a differential scanning calorimeter and a texture analyzer, respectively. Radiation from electron beam caused a slightly increase on its tensile strength characteristic at 100 kGy, while elongation value at this dose had no reduction

  1. Growth and analysis of highly oriented (11n) BCSCO films for device research

    Energy Technology Data Exchange (ETDEWEB)

    Raina, K.K.; Pandey, R.K. [Texas A& M Univ., College Station, TX (United States)

    1994-12-31

    Films of BCSCO superconductor of the type Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub x} have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO{sub 3} substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880{degrees}C) of Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub 8}. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (>860{degrees}C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO{sub 3} have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi{sub 2}CaSr{sub 2}Cu{sub 2}O{sub 8} phase films on (001) NdGaO{sub 3} substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO{sub 3} substrate orientation. The best values of zero resistance (T{sub co}) and critical current density obtained are 87 K and 10{sup 5} A/cm{sup 2}, respectively.

  2. Thermal and Mechanical Properties of Poly(butylene succinate Films Reinforced with Silica

    Directory of Open Access Journals (Sweden)

    Sangviroon Nanthaporn

    2015-01-01

    Full Text Available In recent year, bioplastics have become more popular resulting from the growing concerns on environmental issues and the rising fossil fuel price. However, their applications were limited by its mechanical and thermal properties. The aim of this research is thus to improve mechanical and thermal properties of PBS bioplastic films by reinforcing with silica. Due to the poor interfacial interaction between the PBS matrix and silica, glycidyl methacrylate grafted poly(butylene succinate (PBS-g-GMA was used as a compatibilizer in order to improve the interaction between bioplastic films and filler. PBS-g-GMA was prepared in a twin-screw extruder and analyzed by the FTIR spectrometer. PBS and silica were then mixed in a twin-screw extruder and processed into films by a chill-roll cast extruder. The effects of silica loading on thermal and mechanical properties of the prepared bioplastic films were investigated. It was found that the mechanical properties of PBS/silica composite films were improved when 1%wt of silica was added. However, the mechanical properties decreased with increasing silica loading due to the agglomeration of silica particles. The results also show that the silica/PBS films with PBS-g-GMA possessed improved mechanical properties over the films without the compatibilizer.

  3. Mechanism of spontaneous hole formation in thin polymeric films

    DEFF Research Database (Denmark)

    Yu, Kaijia; Rasmussen, Henrik K.; Román Marín, José Manuel

    2012-01-01

    We show computationally that (molten) thin polymeric film containing nonequilibrium configurations originating from a solvent evaporation may develop holes spontaneously in the molten state, and that they appear delayed. Polymers above the glass transition temperature are liquids where the flow...

  4. Mechanistic Insights into Growth of Surface-Mounted Metal-Organic Framework Films Resolved by Infrared (Nano-) Spectroscopy

    NARCIS (Netherlands)

    Delen, Guusje; Ristanovic, Zoran; Mandemaker, Laurens D. B.; Weckhuysen, Bert M.

    2018-01-01

    Control over assembly, orientation, and defect-free growth of metal-organic framework (MOF) films is crucial for their future applications. A layer-by-layer approach is considered a suitable method to synthesize highly oriented films of numerous MOF topologies, but the initial stages of the film

  5. Stress-driven lithium dendrite growth mechanism and dendrite mitigation by electroplating on soft substrates

    Science.gov (United States)

    Wang, Xu; Zeng, Wei; Hong, Liang; Xu, Wenwen; Yang, Haokai; Wang, Fan; Duan, Huigao; Tang, Ming; Jiang, Hanqing

    2018-03-01

    Problems related to dendrite growth on lithium-metal anodes such as capacity loss and short circuit present major barriers to next-generation high-energy-density batteries. The development of successful lithium dendrite mitigation strategies is impeded by an incomplete understanding of the Li dendrite growth mechanisms, and in particular, Li-plating-induced internal stress in Li metal and its effect on Li growth morphology are not well addressed. Here, we reveal the enabling role of plating residual stress in dendrite formation through depositing Li on soft substrates and a stress-driven dendrite growth model. We show that dendrite growth is mitigated on such soft substrates through surface-wrinkling-induced stress relaxation in the deposited Li film. We demonstrate that this dendrite mitigation mechanism can be utilized synergistically with other existing approaches in the form of three-dimensional soft scaffolds for Li plating, which achieves higher coulombic efficiency and better capacity retention than that for conventional copper substrates.

  6. In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

    KAUST Repository

    Sarath Kumar, S. R.; Nayak, Pradipta K.; Hedhili, Mohamed N.; Khan, M. A.; Alshareef, Husam N.

    2013-01-01

    We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent

  7. Growth and transport properties of thin Co-based Heusler films; Wachstum und Transporteigenschaften duenner Co-basierter Heusler-Filme

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, Horst

    2010-07-01

    During this work, thin films of Co-based Heusler compounds were deposited under optimized conditions, and their structural, magnetic, and transport properties were investigated. The growth of the thin film samples was accomplished by two different methods. At first Co{sub 2}Cr{sub 0.6}Fe{sub 0.4}Al and Co{sub 2}FeSi were deposited by sputter deposition from stoichiometric targets. This is considered the standard technique for the preparation of thin Heusler films. Also for the compounds investigated here it resulted in samples with a high degree of L2{sub 1} ordering. An excess of Fe atoms on Si sites was discovered by a detailed X-ray analysis in conjunction with NMR spectroscopy. The choice of different substrates allowed the adjustment of the growth direction. On the other hand, bulk magnetometry revealed that these sputter deposited films exhibit only a reduced magnetic moment, which is an indication of a reduced spin asymmetry at the Fermi level. One source of this problem seems to be a high residual gas pressure, which leads to an increased sample contamination. To improve this situation, a pulsed laser deposition system was constructed and put into operation. The resulting film growth under ultra-high vacuum conditions led to a further improvement of the short-range crystallographic ordering and a clear enhancement of the magnetic properties. The additional use of a metallic buffer layer resulted in samples with a smooth surface. This opens the door for a number of further analytical experiments, such as tunneling spectroscopy or Brillouin light scattering. After this successful demonstration of this growth technique, an additional method for the flexible variation of the film stoichiometry was implemented. In this work, this method was successfully applied in the deposition of Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films. All samples in this series show a high degree of atomic ordering. Their magnetization values are compatible with the Slater-Pauling rule for

  8. Thermo-Mechanical Fatigue Crack Growth of RR1000

    OpenAIRE

    Christopher John Pretty; Mark Thomas Whitaker; Steve John Williams

    2017-01-01

    Non-isothermal conditions during flight cycles have long led to the requirement for thermo-mechanical fatigue (TMF) evaluation of aerospace materials. However, the increased temperatures within the gas turbine engine have meant that the requirements for TMF testing now extend to disc alloys along with blade materials. As such, fatigue crack growth rates are required to be evaluated under non-isothermal conditions along with the development of a detailed understanding of related failure mechan...

  9. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  10. Mechanism of melting in submonolayer films of nitrogen molecules adsorbed on the basal planes of graphite

    DEFF Research Database (Denmark)

    Hansen, Flemming Yssing; Bruch, Ludwig Walter; Taub, H.

    1995-01-01

    The melting mechanism in submonolayer films of N-2 molecules adsorbed on the basal planes of graphite is studied using molecular-dynamics simulations. The melting is strongly correlated with the formation of vacancies in the films. As the temperature increases, the edges of the submonolayer patch...

  11. Physical and mechanical testing of essential oil-embedded cellulose ester films

    Science.gov (United States)

    Polymer films made from cellulose esters are useful for embedding plant essential oils, either for food packaging or air freshener applications. Studies and testing were done on the physical and mechanical properties of cellulose ester-based films incorporating essential oils (EO) from lemongrass (C...

  12. Mechanism of large optical nonlinearity in gold nanoparticle films.

    Science.gov (United States)

    Mirza, I; McCloskey, D; Blau, W J; Lunney, J G

    2018-04-01

    The Z-scan technique, using femtosecond (fs) laser pulses at 1480 nm laser pulses, was used to measure the nonlinear optical properties of gold (Au) nanoparticle (NP) films made by both nanosecond (ns) and fs pulsed laser deposition (PLD) in vacuum. At irradiance levels of 1×10 12   Wm -2 , the ns-PLD films displayed induced absorption with β=4×10 -5   mW -1 , and a negative lensing effect with n 2 =-4.7×10 -11   m 2  W -1 with somewhat smaller values for the fs-PLD films. These values of n 2 imply an unphysically large change in the real part of the refractive index, demonstrating the need to take account of nonlinear changes of the Fresnel coefficients and multiple beam interference in Z-scan measurements on nanoscale films. Following this approach, the Z-scan observations were analyzed to determine the effective complex refractive index of the NP film at high irradiance. It appears that at high irradiance the NP film behaves as a metal, while at low irradiance it behaves as a low-loss dielectric. Thus, it is conjectured that, for high irradiance near the waist of the Z-scan laser beam, laser driven electron tunneling between NPs gives rise to metal-like optical behavior.

  13. Mechanisms and applications of plant growth promoting rhizobacteria: Current perspective

    Directory of Open Access Journals (Sweden)

    Munees Ahemad

    2014-01-01

    Full Text Available Plant growth promoting rhizobacteria are the soil bacteria inhabiting around/on the root surface and are directly or indirectly involved in promoting plant growth and development via production and secretion of various regulatory chemicals in the vicinity of rhizosphere. Generally, plant growth promoting rhizobacteria facilitate the plant growth directly by either assisting in resource acquisition (nitrogen, phosphorus and essential minerals or modulating plant hormone levels, or indirectly by decreasing the inhibitory effects of various pathogens on plant growth and development in the forms of biocontrol agents. Various studies have documented the increased health and productivity of different plant species by the application of plant growth promoting rhizobacteria under both normal and stressed conditions. The plant-beneficial rhizobacteria may decrease the global dependence on hazardous agricultural chemicals which destabilize the agro-ecosystems. This review accentuates the perception of the rhizosphere and plant growth promoting rhizobacteria under the current perspectives. Further, explicit outlooks on the different mechanisms of rhizobacteria mediated plant growth promotion have been described in detail with the recent development and research. Finally, the latest paradigms of applicability of these beneficial rhizobacteria in different agro-ecosystems have been presented comprehensively under both normal and stress conditions to highlight the recent trends with the aim to develop future insights.

  14. Growth, morphology, and conductivity in semimetallic/metallic films on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Jnawali, Giriraj

    2009-06-09

    This dissertation deals with the study of epitaxial growth of semimetallic (Bi) and metallic (Ag) films on Si(001) as well as in situ electrical transport study of those films via surface manipulation. The focus of the transport measurements is to study the influence of the surface morphology or structure on the resistance of the film. In spite of the large lattice mismatch and different lattice geometry, it is possible to grow epitaxial Bi(111) films on Si(001) substrates, which are surprisingly smooth, relaxed and almost free of defects. Due to the two-fold symmetry of the substrates, the Bi(111) film is composed of crystallites rotated by 90 with respect to each other. Annealing of 6 nm film from 150 K to 450 K enables the formation of a periodic interfacial misfit dislocations, which accommodates a remaining lattice mismatch of 2.3 %. The surface/interface roughness and the bulk defect density of the film found to be extremely low, indicating the high crystalline quality of the film with atomically smooth surface and abrupt interface. Similar to the Bi films, Ag grows in a (111) orientation on Si(001) with two 90 rotated domains. The remaining strain of 2.2 % (tensile) is accommodated by the formation of an ordered network of dislocations. The Ag film exhibits atomically smooth surface. Those Bi films and Ag films were used as model systems to study the influence of the surface morphology on the electrical resistance. Surprisingly, all the Bi films (3-170 nm thicknesses) have shown an anomalous behavior of conductance with temperature and thickness. As in the case of doped semiconductor, the conductance increases exponentially from 150 K to 300 K and saturates at 350 K before finally decreasing with temperature. In situ measurements of the resistance during additional Bi deposition on the smooth Bi(111) films exhibit a square root dependent with coverage after a linear increase at very low coverage (1 % of a BL). During additional deposition of Bi, carriers are

  15. Oxide thin films for spintronics application growth and characterization

    OpenAIRE

    Popovici, Nicoleta, 1973-

    2009-01-01

    Tese de doutoramento, Física (Física), Universidade de Lisboa, Faculdade de Ciências, 2009 During my PhD research I have synthesized thin films of a material known as a diluted magnetic semiconductor (DMS) using the pulsed laser deposition (PLD) technique. This material is envisioned to be of importance in the emerging field of spintronics where both the charge and the spin of the carriers can be combined to yield unique functionalities. It was envisaged that if spin polarized charge carri...

  16. Epitaxial growth of bcc-FexCo100-x thin films on MgO(1 1 0) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nishiyama, Tsutomu; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2010-01-01

    Fe x Co 100-x (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe x Co 100-x film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe x Co 100-x crystals with very small errors less than ±0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe 50 Co 50 /MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.

  17. Epitaxial growth of bcc-Fe{sub x}Co{sub 100-x} thin films on MgO(1 1 0) single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.j [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Nishiyama, Tsutomu; Shikada, Kouhei [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2010-07-15

    Fe{sub x}Co{sub 100-x} (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 deg. C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180 deg. each other for all compositions. Fe{sub x}Co{sub 100-x} film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe{sub x}Co{sub 100-x} crystals with very small errors less than +-0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe{sub 50}Co{sub 50}/MgO interface along the MgO[1 1-bar 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about -17% existing at the FeCo/MgO interface along the MgO[1 1-bar 0] direction.

  18. Mechanical and permeability properties of milk protein films

    Directory of Open Access Journals (Sweden)

    Marília I.S. Folegatti

    1998-01-01

    Full Text Available Edible films present a potential alternative for replacing plastic films used for packaging in food industry. One of the major advantages is the environmental appeal of this technology, which produces no packaging waste. Some films made with other edible materials have found commercial applications, and many more are being developed using a myriad of food based components. This paper focuses on some important characteristics of films produced with sodium and calcium caseinates. The effects of caseinate type and concentration, plasticizer concentration and pH were studied. Major parameters investigated were solubility, tensile properties, water vapour and oxygen permeabilities. Caseinate films showed high solubility at pH range 6.0-8.0 and complete insolubility at pH 3.0 and 4.0. Calcium caseinate films had a higher tensile strength and a lower % elongation at break than sodium caseinate films. There was not significant difference in water vapour and oxygen permeabilities between sodium and calcium caseinate films.Filmes comestíveis representam uma alternativa potencial para a substituição de filmes plásticos .empregados em embalagem de alimentos. Uma de suas maiores vantagens relaciona-se com o problema de poluição ambiental por não gerar material residual. Filmes elaborados com outros materiais comestíveis não protéicos têm encontrado aplicação comercial e muitos outros ainda estão sendo pesquisados, usando uma grande variedade de componentes alimentares. Este trabalho estuda algumas características importantes dos filmes produzidos com caseinatos de sódio e de cálcio. Os efeitos do tipo e concentração de caseinato, concentração de plastificante e do pH são investigados. Os parâmetros pesquisados foram a solubilidade, propriedades de tração e permeabilidade a vapor de água e oxigênio. Filmes de caseinato apresentaram alta solubilidade na faixa de pH entre 6.0 e 8.0 e completa insolubilidade em pH 3.0 e 4.0. Maior

  19. General aspects of solid on liquid growth mechanisms

    International Nuclear Information System (INIS)

    Laux, E; Charmet, J; Haquette, H; Banakh, O; Jeandupeux, L; Graf, B; Keppner, H

    2009-01-01

    Liquids, in general, tend to have a lower density as solids and therefore it is not straightforward to deposit solid over liquids in a way that the liquid becomes hermetically sealed under the solid layer. The authors review that several phenomena that can easily be observed in nature are only due to particular anomalies and solid on liquid is rather an exception as the rule. Natural solid on liquid systems are lacking of thermal, mechanical or chemical stability. It is not surprising, that one is not at all used thinking about to e.g. replace the gate oxide in a thin film transistor by a thin film of oil, or, to find in other microsystems functional liquids between a stack of thin solid films. However, once this becomes a serious option, a large variety of new Microsystems with new functionalities can be easily designed. In another paper (this conference and [1]) the authors pioneered that the polymer Parylene (poly(p-xylylene)) can be deposited on liquids coming already quite close to the above mentioned vision. In this paper the authors ask if one can synthesize other solid on liquid systems and surprisingly conclude, based on experimental evidence, that solid on liquid deposition seems to rather be the rule and not the exception.

  20. Quantifying mechanical force in axonal growth and guidance

    Directory of Open Access Journals (Sweden)

    Ahmad Ibrahim Mahmoud Athamneh

    2015-09-01

    Full Text Available Mechanical force plays a fundamental role in neuronal development, physiology, and regeneration. In particular, research has shown that force is involved in growth cone-mediated axonal growth and guidance as well as stretch-induced elongation when an organism increases in size after forming initial synaptic connections. However, much of the details about the exact role of force in these fundamental processes remain unknown. In this review, we highlight (1 standing questions concerning the role of mechanical force in axonal growth and guidance and (2 different experimental techniques used to quantify forces in axons and growth cones. We believe that satisfying answers to these questions will require quantitative information about the relationship between elongation, forces, cytoskeletal dynamics, axonal transport, signaling, substrate adhesion, and stiffness contributing to directional growth advance. Furthermore, we address why a wide range of force values have been reported in the literature, and what these values mean in the context of neuronal mechanics. We hope that this review will provide a guide for those interested in studying the role of force in development and regeneration of neuronal networks.

  1. Growth Mechanism of Pumpkin-Shaped Vaterite Hierarchical Structures

    Science.gov (United States)

    Ma, Guobin; Xu, Yifei; Wang, Mu

    2015-03-01

    CaCO3-based biominerals possess sophisticated hierarchical structures and promising mechanical properties. Recent researches imply that vaterite may play an important role in formation of CaCO3-based biominerals. However, as a less common polymorph of CaCO3, the growth mechanism of vaterite remains not very clear. Here we report the growth of a pumpkin-shaped vaterite hierarchical structure with a six-fold symmetrical axis and lamellar microstructure. We demonstrate that the growth is controlled by supersaturation and the intrinsic crystallographic anisotropy of vaterite. For the scenario of high supersaturation, the nucleation rate is higher than the lateral extension rate, favoring the ``double-leaf'' spherulitic growth. Meanwhile, nucleation occurs preferentially in as determined by the crystalline structure of vaterite, modulating the grown products with a hexagonal symmetry. The results are beneficial for an in-depth understanding of the biomineralization of CaCO3. The growth mechanism may also be applicable to interpret the formation of similar hierarchical structures of other materials. The authors gratefully acknowledge the financial support from National Science Foundation of China (Grant Nos. 51172104 and 50972057) and National Key Basic Research Program of China (Grant No. 2010CB630705).

  2. Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

    International Nuclear Information System (INIS)

    Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A.V.

    2015-01-01

    Highlights: • DLC and CN x bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN x ) bilayer. • Al/CN x bilayer presents a higher content of Csp 3 /Csp 2 bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN x ) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN x bilayer. Al interlayer induces the increase of the size and ordering of Csp 2 clusters in the films but AlN interlayer increases the disordering degree of Csp 2 clusters. XPS results showed that a higher content of Csp 3 /Csp 2 bonds presents in the Al/CN x bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN x ) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN x bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application

  3. Effects of a magnetic field on growth of porous alumina films on aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Ispas, Adriana; Bund, Andreas [Technische Universitaet Dresden, Physikalische Chemie und Elektrochemie, 01062 Dresden (Germany); Vrublevsky, Igor, E-mail: vrublevsky@bsuir.edu.b [Belarusian State University of Informatics and Radioelectronics Minsk, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus)

    2010-05-01

    The effects induced by a magnetic field on the oxide film growth on aluminum in sulfuric, oxalic, phosphoric and sulfamic acid, and on current transients during re-anodizing of porous alumina films in the barrier-type electrolyte, were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on Si wafer substrates. We could show that the duration of the anodizing process increased by 33% during anodizing in sulfuric acid when a magnetic field was applied (0.7 T), compared to the process without a magnetic field. Interestingly, such a magnetic field effect was not found during anodizing in oxalic and sulfamic acid. The pore intervals were decreased by ca. 17% in oxalic acid. These findings were attributed to variations in electronic properties of the anodic oxide films formed in various electrolytes and interpreted on the basis of the influence of trapped electrons on the mobility of ions migrating during the film growth. The spin dependent tunneling of electrons into the surface layer of the oxide under the magnetic field could be responsible for the shifts of the current transients to lower potentials during re-anodizing of heat-treated oxalic and phosphoric acid alumina films.

  4. The correlation between mechanical stress and magnetic anisotropy in ultrathin films

    International Nuclear Information System (INIS)

    Sander, D.

    1999-01-01

    The impact of stress-driven structural transitions and of film strain on the magnetic properties of nm ferromagnetic films is discussed. The stress-induced bending of film-substrate composites is analysed to derive information on film stress due to lattice mismatch or due to surface-stress effects. The magneto-elastic coupling in epitaxial films is determined directly from the magnetostrictive bending of the substrate. The combination of stress measurements with magnetic investigations by the magneto-optical Kerr effect (MOKE) reveals the modification of the magnetic anisotropy by film stress. Stress-strain relations are derived for various epitaxial orientations to facilitate the analysis of the substrate curvature. Biaxial film stress and magneto-elastic coupling coefficients are measured in epitaxial Fe films in situ on W single-crystal substrates. Tremendous film stress of more than 10 GPa is measured in pseudomorphic Fe layers, and the important role of film stress as a driving force for the formation of misfit distortions and for inducing changes of the growth mode in monolayer thin films is presented. The direct measurement of the magneto-elastic coupling in epitaxial films proves that the magnitude and sign of the magneto-elastic coupling deviate from the respective bulk value. Even a small film strain of order 0.1% is found to induce a significant change of the effective magneto-elastic coupling coefficient. This peculiar behaviour is ascribed to a second-order strain dependence of the magneto-elastic energy density, in contrast to the linear strain dependence that is valid for bulk samples. (author)

  5. Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone.

    Science.gov (United States)

    Nanayakkara, Charith E; Liu, Guo; Vega, Abraham; Dezelah, Charles L; Kanjolia, Ravindra K; Chabal, Yves J

    2017-06-20

    Uniform and conformal deposition of tin oxide thin films is important for several applications in electronics, gas sensing, and transparent conducting electrodes. Thermal atomic layer deposition (ALD) is often best suited for these applications, but its implementation requires a mechanistic understanding of the initial nucleation and subsequent ALD processes. To this end, in situ FTIR and ex situ XPS have been used to explore the ALD of tin oxide films using tributyltin ethoxide and ozone on an OH-terminated, SiO 2 -passivated Si(111) substrate. Direct chemisorption of tributyltin ethoxide on surface OH groups and clear evidence that subsequent ligand exchange are obtained, providing mechanistic insight. Upon ozone pulse, the butyl groups react with ozone, forming surface carbonate and formate. The subsequent tributyltin ethoxide pulse removes the carbonate and formate features with the appearance of the bands for CH stretching and bending modes of the precursor butyl ligands. This ligand-exchange behavior is repeated for subsequent cycles, as is characteristic of ALD processes, and is clearly observed for deposition temperatures of 200 and 300 °C. On the basis of the in situ vibrational data, a reaction mechanism for the ALD process of tributyltin ethoxide and ozone is presented, whereby ligands are fully eliminated. Complementary ex situ XPS depth profiles confirm that the bulk of the films is carbon-free, that is, formate and carbonate are not incorporated into the film during the deposition process, and that good-quality SnO x films are produced. Furthermore, the process was scaled up in a cross-flow reactor at 225 °C, which allowed the determination of the growth rate (0.62 Å/cycle) and confirmed a self-limiting ALD growth at 225 and 268 °C. An analysis of the temperature-dependence data reveals that growth rate increases linearly between 200 and 300 °C.

  6. Epitaxial growth of Fe-based superconductor thin films

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Sven; Haenisch, Jens; Holzapfel, Bernhard [Institut fuer Technische Physik, Karlsruher Institut fuer Technologie, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2016-07-01

    The Fe-based superconductors (FBS), discovered in 2008, are not only interesting for possible applications due to their large upper critical fields and low anisotropies, but also for basic understanding of unconventional superconductivity. With their properties, they constitute a link between the classic low-T{sub c} superconductors (low anisotropies, low thermal fluctuations, s-wave type symmetry) and the oxocuprates (T{sub c} up to 55 K, large H{sub c2}, unconventional pairing). Their multi-band nature reminds of MgB{sub 2}. We prepare thin films of FBS in the so called 122 family, namely Co- and P-doped BaFe{sub 2}As{sub 2} to investigate application relevant properties, such as critical current density J{sub c}, by pulsed laser deposition using a frequency-tripled Nd:YAG laser (λ = 355 nm). Microstructure and chemical composition will be investigated by XRD, AFM and SEM, and electrical transport using a 14 T PPMS. The results are compared to literature data on films grown at different wavelengths.

  7. Mechanisms and pathways of growth failure in primordial dwarfism.

    Science.gov (United States)

    Klingseisen, Anna; Jackson, Andrew P

    2011-10-01

    The greatest difference between species is size; however, the developmental mechanisms determining organism growth remain poorly understood. Primordial dwarfism is a group of human single-gene disorders with extreme global growth failure (which includes Seckel syndrome, microcephalic osteodysplastic primordial dwarfism I [MOPD] types I and II, and Meier-Gorlin syndrome). Ten genes have now been identified for microcephalic primordial dwarfism, encoding proteins involved in fundamental cellular processes including genome replication (ORC1 [origin recognition complex 1], ORC4, ORC6, CDT1, and CDC6), DNA damage response (ATR [ataxia-telangiectasia and Rad3-related]), mRNA splicing (U4atac), and centrosome function (CEP152, PCNT, and CPAP). Here, we review the cellular and developmental mechanisms underlying the pathogenesis of these conditions and address whether further study of these genes could provide novel insight into the physiological regulation of organism growth.

  8. Influence of growth temperature on bulk and surface defects in hybrid lead halide perovskite films

    Science.gov (United States)

    Peng, Weina; Anand, Benoy; Liu, Lihong; Sampat, Siddharth; Bearden, Brandon E.; Malko, Anton V.; Chabal, Yves J.

    2016-01-01

    The rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state density of samples prepared at 150 °C (~1017 cm-3) increases by 5 fold at 175 °C even though the average grains size increases slightly, ruling out grain boundary defects as the main mechanism for the observed differences in PL properties upon annealing. Upon surface passivation using water molecules, the PL intensity and lifetime of samples prepared at 200 °C are only partially improved, remaining significantly lower than those prepared at 150 °C. Thus, the present study indicates that the majority of these defect states observed at elevated growth temperatures originates from bulk defects and underscores the importance to control the formation of bulk defects together with grain boundary and surface defects to further improve the optoelectronic properties of perovskites.The rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state

  9. Domain growth of carbon nanotubes assisted by dewetting of thin catalyst precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Alok Kumar [Defence Materials and Stores R and D Establishment (DRDO), GT Road, Kanpur 208013 (India); Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India); Sachan, Priyanka; Samanta, Chandan [Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India); Mukhopadhyay, Kingsuk [Defence Materials and Stores R and D Establishment (DRDO), GT Road, Kanpur 208013 (India); Sharma, Ashutosh, E-mail: ashutos@iitk.ac.in [Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India)

    2014-01-01

    We explore self-organized dewetting of ultrathin films of a novel metal complex as a one step surface patterning method to create nanoislands of iron, using which spatially separated carbon nanostructures were synthesized. Dewetting of ultrathin metal complex films was induced by two different methods: liquid solvent exposure and thermal annealing to engender surface patterning. For thermal dewetting, thin films of the iron oleate complex were dewetted at high temperature. In the case of liquid solvent assisted dewetting, the metal complex, mixed with a sacrificial polymer (polystyrene) was spin coated as thin films (<40 nm) and then dewetted under an optimal solution mixture consisting of methyl ethyl ketone, acetone and water. The carrier polymer was then selectively removed to produce the iron metal islands. These metal islands were used for selective growth of discrete patches of multiwall CNTs and CNFs by a chemical vapor deposition (CVD) process. Solvent induced dewetting showed clear advantages over thermal dewetting owing to reduced size of catalyst domains formed by dewetting, an improved control over CNT growth as well as in its ability to immobilize the seed particles. The generic solution mediated dewetting and pattern generation in thin films of various catalytic precursors can thus be a powerful method for selective domain growth of a variety of functional nanomaterials.

  10. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    Energy Technology Data Exchange (ETDEWEB)

    Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Ikeshoji, Tamio; Orimo, Shin-ichi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  11. Why in situ, real-time characterization of thin film growth processes?

    International Nuclear Information System (INIS)

    Auciello, O.; Krauss, A.R.

    1995-01-01

    Since thin-film growth occurs at the surface, the analytical methods should be highly surface-specific. although subsurface diffusion and chemical processes also affect film properties. Sampling depth and ambient-gas is compatibility are key factors which must be considered when choosing in situ probes of thin-film growth phenomena. In most cases, the sampling depth depends on the mean range of the exit species (ion, photon, or electron) in the sample. The techniques that are discussed in this issue of the MRS Bulletin (1) have been chosen because they may be used for in situ, real-time analysis of film-growth phenomena in vacuum and in the presence of ambient gases resulting either from the deposition process or as a requirement for the production of the desired chemical phase. A second criterion for inclusion is that the instrumentation be sufficiently compact and inexpensive to permit use as a dedicated tool in a thin-film deposition system

  12. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    International Nuclear Information System (INIS)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-01-01

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al 2 O 3 substrates indicated polycrystalline films with a LiAlO 2 secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides

  13. Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

    2012-01-01

    Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

  14. Structural, Thermal, Physical, Mechanical, and Barrier Properties of Chitosan Films with the Addition of Xanthan Gum.

    Science.gov (United States)

    de Morais Lima, Maria; Carneiro, Lucia Cesar; Bianchini, Daniela; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa; Prentice, Carlos; Moreira, Angelita da Silveira

    2017-03-01

    Films based on chitosan and xanthan gum were prepared using casting technique aiming to investigate the potential of these polymers as packaging materials. Six formulations of films were studied varying the proportion of chitosan and xanthan gum: 100:0 (chitosan:xanthan gum, w/w, C100XG0 film); 90:10 (chitosan:xanthan gum, w/w, C90XG10 film); 80:20 (chitosan:xanthan gum, w/w, C80XG20 film); 70:30 (chitosan:xanthan gum, w/w, C70XG30 film); 60:40 (chitosan:xanthan gum, w/w, C60XG40 film); and 50:50 (chitosan:xanthan gum, w/w, C50XG50 film). The total quantity of solids (chitosan and xanthan gum) in the filmogenic solution was 1.5 g per 100 mL of aqueous solution for all treatments, according to the proportion of each polymer. The films were evaluated by their functional groups, structural, thermal, morphological, physical, mechanical, and barrier properties. All films have presented endothermic peaks in the range of 122 to 175 °C and broad exothermic peaks above 200 °C, which were assigned to the melting temperature and thermal decomposition, respectively. These results demonstrated that films with xanthan gum have the highest T m and Δ m H. The films containing higher content of xanthan gum show also the highest tensile strength and the lowest elongation. Xanthan gum addition did not affect the water vapor permeability, solubility, and moisture of films. This set of data suggests the formation of chitosan-xanthan complexes in the films. © 2017 Institute of Food Technologists®.

  15. Structural properties and growth evolution of diamond-like carbon films with different incident energies: A molecular dynamics study

    International Nuclear Information System (INIS)

    Li, Xiaowei; Ke, Peiling; Zheng, He; Wang, Aiying

    2013-01-01

    Structural properties and growth evolution of diamond-like carbon (DLC) films with different incident energies were investigated systematically by the molecular dynamics simulation using a Tersoff interatomic potential for carbon-carbon interaction. The results revealed that the density, sp 3 fraction and residual compressive stress as a function of incident energy increased firstly and then decreased; when the incident energy was 70 eV/atom, the density could reach to 3.0 g/cm 3 with the maximal compressive stress of 15.5 GPa. Structure analysis indicated that the deviation of both bond angles and lengths from the equilibrium position led to the generation of a large residual stress, while the high compressive stress mainly attributed to the decrease of both bond angles and lengths among carbon atoms. The growth of DLC films underwent a formation process of “Line-Net” structure accompanied with the interaction of many atomic motion mechanisms, and the “Point” stage was only found for DLC films with low incident energy.

  16. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    International Nuclear Information System (INIS)

    Sadekar, H.K.; Deshpande, N.G.; Gudage, Y.G.; Ghosh, A.; Chavhan, S.D.; Gosavi, S.R.; Sharma, Ramphal

    2008-01-01

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has ∼120 ± 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient (∼75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV

  17. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    Energy Technology Data Exchange (ETDEWEB)

    Sadekar, H K [Arts, Commerce and Science college, Sonai 414105 (M.S.) (India); Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Deshpande, N G; Gudage, Y G; Ghosh, A; Chavhan, S D; Gosavi, S R [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)

    2008-04-03

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.

  18. Substrate mediated growth of organic semiconducting thin films; Templateffekte bei der Strukturierung organischer Halbleiterfilme

    Energy Technology Data Exchange (ETDEWEB)

    Goetzen, Jan

    2010-09-17

    Since electronic properties of molecular materials are closely related to their structural order a precise control of the molecular packing and crystalline orientation of thin films is of vital interest for an optimization of organic electronic devices. Of particular interest in this respect is the initial stage of film formation which is largely governed by the interplay of intermolecular and molecule-substrate interactions. One approach to control the molecular film structure is based on substrate mediated growth. In this respect we have studied structural properties of thin films of pentacene, pentacene- 5,7,12,14-tetrone and perfluoro-pentacene which were grown onto various substrates including metals, metal oxides and graphite. On metal surfaces the molecules initially form a chemisorbed monolayer where molecules even can be uniformly aligned when using appropriate substrates with twofold symmetry. Further deposition, however, is accompanied by a pronounced dewetting and formation of disjoined islands which results from a large structural mismatch between the molecular arrangement in the monolayer and the crystalline phase. In some cases it is possible to orient such islands by utilizing step mediated nucleation and decoration of step bunches which allows the preparation of azimuthally well oriented elongated islands. On single crystalline oxides the growth parallels the situation found before for SiO{sub 2} where islands of upright oriented molecules are formed. The growth on graphite is somewhat particular since the lattice provides a natural template for acenes yielding epitaxially ordered monolayer films with planar adsorption geometry like in case of metals. Interestingly, however, no dewetting occurs upon further growth and instead rather smooth films are formed. The detailed analysis for the case of pentacene showed that the substrate-molecule interaction actually is weaker than the intermolecular interaction so that multilayer films can lift the

  19. Thin film growth into the ion track structures in polyimide by atomic layer deposition

    Science.gov (United States)

    Mättö, L.; Malm, J.; Arstila, K.; Sajavaara, T.

    2017-09-01

    High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was determined to be 51 ± 3 × 1016 at./cm2, corresponding to the thickness of 55 ± 3 nm. Furthermore, the growth per cycle was 1.4 Å/cycle. The growth is highly linear from the first cycles. In the case of TiO2, the growth per cycle is clearly slower during the first 200 cycles but then it increases significantly. The growth rate based on RBS measurements is 0.24 Å/cycle from 3 to 200 cycles and then 0.6 Å/cycle between 200 and 400 cycles. The final areal density of TiO2 film after 400 cycles is 148 ± 3 × 1015 at./cm2 which corresponds to the thickness of 17.4 ± 0.4 nm. The modification of the polyimide surface by etching prior to the deposition did not have an effect on the Al2O3 and TiO2 growth.

  20. Growth Mechanism of Gold Nanorods in Binary Surfactant System

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bo-Mi; Seo, Sun-Hwa; Joe, Ara; Shim, Kyu-Dong; Jang, Eue-Soon [Kumoh National Institute of Technology, Gumi (Korea, Republic of)

    2016-06-15

    In order to reveal the growth mechanism of gold nanorods (GNRs) in a binary surfactant system, we synthesized various GNRs by changing the concentration of the surfactants, AgNO{sub 3}, and HBr in the growth solution. We found that the benzyldime thylhexadecylammoniumchloride surfactant had weak interaction with the gold ions, but it could reduce the membrane fluidity. In addition, we could dramatically decrease the cetyltrimethylammonium bromide concentration required for GNR growth by adding an HBr solution. Notably, Ag{sup +} ions were necessary to break the symmetry of the seed crystals for GNR growth, but increasing the concentration of Ag{sup +} and Br{sup -} ions caused a decrease in the template size.

  1. Growth mechanism and magnon excitation in NiO nanowalls

    Directory of Open Access Journals (Sweden)

    Yang Chun

    2011-01-01

    Full Text Available Abstract The nanosized effects of short-range multimagnon excitation behavior and short-circuit diffusion in NiO nanowalls synthesized using the Ni grid thermal treatment method were observed. The energy dispersive spectroscopy mapping technique was used to characterize the growth mechanism, and confocal Raman scattering was used to probe the antiferromagnetic exchange energy J 2 between next-nearest-neighboring Ni ions in NiO nanowalls at various growth temperatures below the Neel temperature. This study shows that short spin correlation leads to an exponential dependence of the growth temperatures and the existence of nickel vacancies during the magnon excitation. Four-magnon configurations were determined from the scattering factor, revealing a lowest state and monotonic change with the growth temperature. PACS: 75.47.Lx; 61.82.Rx; 75.50.Tt; 74.25.nd; 72.10.Di

  2. Growth mechanism and magnon excitation in NiO nanowalls

    Science.gov (United States)

    2011-01-01

    The nanosized effects of short-range multimagnon excitation behavior and short-circuit diffusion in NiO nanowalls synthesized using the Ni grid thermal treatment method were observed. The energy dispersive spectroscopy mapping technique was used to characterize the growth mechanism, and confocal Raman scattering was used to probe the antiferromagnetic exchange energy J2 between next-nearest-neighboring Ni ions in NiO nanowalls at various growth temperatures below the Neel temperature. This study shows that short spin correlation leads to an exponential dependence of the growth temperatures and the existence of nickel vacancies during the magnon excitation. Four-magnon configurations were determined from the scattering factor, revealing a lowest state and monotonic change with the growth temperature. PACS: 75.47.Lx; 61.82.Rx; 75.50.Tt; 74.25.nd; 72.10.Di PMID:21824408

  3. Plant growth-promoting bacteria: mechanisms and applications.

    Science.gov (United States)

    Glick, Bernard R

    2012-01-01

    The worldwide increases in both environmental damage and human population pressure have the unfortunate consequence that global food production may soon become insufficient to feed all of the world's people. It is therefore essential that agricultural productivity be significantly increased within the next few decades. To this end, agricultural practice is moving toward a more sustainable and environmentally friendly approach. This includes both the increasing use of transgenic plants and plant growth-promoting bacteria as a part of mainstream agricultural practice. Here, a number of the mechanisms utilized by plant growth-promoting bacteria are discussed and considered. It is envisioned that in the not too distant future, plant growth-promoting bacteria (PGPB) will begin to replace the use of chemicals in agriculture, horticulture, silviculture, and environmental cleanup strategies. While there may not be one simple strategy that can effectively promote the growth of all plants under all conditions, some of the strategies that are discussed already show great promise.

  4. Highly Oriented Growth of Piezoelectric Thin Films on Silicon using Two-Dimensional Nanosheets as Growth Template Layer

    NARCIS (Netherlands)

    Nguyen, Duc Minh; Yuan, H.; Houwman, Evert Pieter; Dekkers, Jan M.; Koster, Gertjan; ten Elshof, Johan E.; Rijnders, Augustinus J.H.M.

    2016-01-01

    Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelectric capacitor stacks on Si and Pt/Ti/SiO2/Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films are achieved by utilizing CNOns and TiOns,

  5. Coloration and bleaching mechanism of niobium oxide electrochromic thin films; Sanka niobu electromic usumaku no chakushoshoku mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Yoshimura, K; Miki, T; Tazawa, M; Jin, P; Igarashi, K; Tanemura, S [National Industrial Research Institute of Nagoya, Nagoya (Japan)

    1997-11-25

    In order to search for the coloration and bleaching mechanism of niobium oxide, considerations were given on optical properties and electron conditions in niobium oxide thin films (glass plates as substrates coated with ITO) prepared by using the reactive DC magnetron sputtering process. The films were so grown that their thickness will all be 100 nm to facilitate data comparison. Coloration and bleaching of the grown test films were conducted by cyclic voltammetry. Electron spectra were measured by using XPS, and electron energy was analyzed. Coloration of niobium oxide occurs as a result of change in valency electron state from an Nb {sup 5+} state to an Nb {sup 4+} state, while change in the XPS spectra also corresponds with the above change. However, the XPS spectra differ greatly between crystalline samples and amorphous samples. The coloration and bleaching mechanism of the crystallized Nb2O5 film can be explained by a reaction formula similar to that for WO3. However, with regard to the amorphous Nb2O5 film, an independent reaction involving water in the film seems to occur together with the same reaction as in the crystallized film. 9 refs., 5 figs.

  6. Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

    International Nuclear Information System (INIS)

    Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

    1991-01-01

    This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

  7. Antimicrobial, Physicochemical, Mechanical, and Barrier Properties of Tapioca Starch Films Incorporated with Eucalyptus Extract

    Directory of Open Access Journals (Sweden)

    M. Rojhan

    2013-11-01

    Full Text Available Starch is found in abundance in nature and it is one of the raw materials used for food packagingbecause of the low price, biodegradability, good mechanical and barrier properties. The recycling ability ofcoating materials was significantly increased by using edible films and coating in comparison to traditionalpackaging and it could be an alternative for synthetic films. In this research, the effect of eucalyptus extract(Aqueous Extract was investigated on tapioca starch films. Tapioca starch films were prepared by castingmethod with addition of eucalyptus extract and a mixture of sorbitol/glycerol (weight ratio of 3 to 1 asplasticizers. Eucalyptus extract incorporated to the tapioca starch films were dried at different concentrations(0, 15, 25, and 35 of total solid under controlled conditions. Physicochemical properties such as waterabsorption capacity (WAC, water vapor permeability (WVP and mechanical properties of the films wereevaluated. Results showed that by increasing the concentration of eucalyptus extract, tensile strength wasincreased from 20.60 to 15.68 (MPa, also elongation was increased from 19.31 to 23.57 (% at break andYoung’s modulus was decreased from 800.31 to 500.32 (MPa. Also incorporation of eucalyptus extract in thestructure of biopolymer increased permeability of water vapor of starch films. Tapioca starch filmsincorporated with eucalyptus extract exhibited excellent antimicrobial activity against E. Coli. In summary,eucalyptus extract improves functional properties of tapioca starch films and this types of films can be used infood packaging.

  8. Bio-active nanocomposite films based on nanocrystalline cellulose reinforced styrylquinoxalin-grafted-chitosan: Antibacterial and mechanical properties.

    Science.gov (United States)

    Fardioui, Meriem; Meftah Kadmiri, Issam; Qaiss, Abou El Kacem; Bouhfid, Rachid

    2018-07-15

    In this study, active nanocomposite films based on cellulose nanocrystalline (NCC) reinforced styrylquinoxalin-grafted-chitosan are prepared by solvent-casting process. The structures of the two styrylquinoxaline derivatives were confirmed by FT-IR, 1 H, 13 C NMR spectral data and the study of the antibacterial activity against Escherichia coli (EC), Staphylococcus aureus (SA), Bacillus subtilis (BS) and Pseudomonas Aeruginosa (PA) exhibits that they have a good antibacterial activity against (PA). On their side, the styrylquinoxalin-g-chitosan films are able to inhibit the growth of (PA) through their contact area without being damaged by the antibacterial test conditions. The addition of 5wt% of NCCs as nano-reinforcements revealed no change at the level of antibacterial activity but led to an important improvement of the mechanical properties (more than 60% and 90% improvement in Young's modulus and tensile strength, respectively) of the modified-chitosan films. Thereby, the present nanocomposite films are prepared by a simple way and featured by good mechanical and antibacterial properties which enhance the possibility to use them as bio-based products for biomedical and food packaging. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. Growth properties of poly(tetrafluoroethylene) films by synchrotron radiation ablation

    International Nuclear Information System (INIS)

    Guo, Qixin; Kugino, Takashi; Kume, Yusuke; Mitsuishi, Yoshiaki; Tanaka, Tooru; Nishi, Mitsuhiro; Ogawa, Hiroshi

    2007-01-01

    High-quality poly(tetrafluoroethylene) (PTFE) films have been grown on Si substrates by synchrotron radiation ablation of a PTFE target. Only doublet absorption structures assigned to C-F asymmetric and symmetric stretching vibrations in CF 2 groups are observed, suggesting that the CF 2 groups in the grown PTFE film are organized in an ordered manner through linear attachment. The growth rate of the PTFE films increases with increasing target temperature, while it decreases with increasing substrate temperature. It has been shown that the thickness of the PTFE film with a high-spatial-resolution structure can be easily controlled at nanometer order by changing the synchrotron radiation irradiation dose. (author)

  10. Growth analysis of cadmium sulfide thin films by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Ramanathan, K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    CdS films have been deposited by solution growth on SnO{sub 2} and glass substrates. Nucleation on SnO{sub 2} occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO{sub 2} depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.

  11. Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

    Science.gov (United States)

    Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

    2018-06-01

    We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

  12. Acetylated rice starches films with different levels of amylose: Mechanical, water vapor barrier, thermal, and biodegradability properties.

    Science.gov (United States)

    Colussi, Rosana; Pinto, Vânia Zanella; El Halal, Shanise Lisie Mello; Biduski, Bárbara; Prietto, Luciana; Castilhos, Danilo Dufech; Zavareze, Elessandra da Rosa; Dias, Alvaro Renato Guerra

    2017-04-15

    Biodegradable films from native or acetylated starches with different amylose levels were prepared. The films were characterized according to the mechanical, water vapor barrier, thermal, and biodegradability properties. The films from acetylated high amylose starches had higher moisture content and water solubility than the native high amylose starch film. However, the acetylation did not affect acid solubility of the films, regardless of the amylose content. Films made from high and medium amylose rice starches were obtained; however low amylose rice starches, whether native or acetylated, did not form films with desirable characteristics. The acetylation decreased the tensile strength and increased the elongation of the films. The acetylated starch-based films had a lower decomposition temperature and higher thermal stability than native starch films. Acetylated starches films exhibited more rapid degradation as compared with the native starches films. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Comparative Review on Thin Film Growth of Iron-Based Superconductors

    Directory of Open Access Journals (Sweden)

    Yoshinori Imai

    2017-07-01

    Full Text Available Since the discovery of the novel iron-based superconductors, both theoretical and experimental studies have been performed intensively. Because iron-based superconductors have a smaller anisotropy than high-Tc cuprates and a high superconducting transition temperature, there have been a lot of researchers working on the film fabrication of iron-based superconductors and their application. Accordingly, many novel features have been reported in the films of iron-based superconductors, for example, the fabrication of the epitaxial film with a higher Tc than bulk samples, the extraction of the metastable phase which cannot be obtained by the conventional solid state reaction, and so on. In this paper, we review the progress of research on thin film fabrications of iron-based superconductors, especially the four categories: LnFeAs(O,F (Ln = Lanthanide, AEFe2As2 (AE = Alkaline-earth metal, FeCh (Ch = Chalcogen, and FeSe monolayer. Furthermore, we focus on two important topics in thin films of iron-based superconductors; one is the substrate material for thin film growth on the iron-based superconductors, and the other is the whole phase diagram in FeSe1-xTex which can be obtained only by using film-fabrication technique.

  14. Growth of layered superconductor β-PdBi{sub 2} films using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Denisov, N.V., E-mail: denisov@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Matetskiy, A.V.; Tupkalo, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

    2017-04-15

    Highlights: • Bulk β-PdBi{sub 2} is layered material with advanced properties of topological superconductor. • We present a method for growing β-PdBi{sub 2} films of a desired thickness. • Method utilizes MBE growth of β-PdBi{sub 2}, using Bi(111) film on Si(111) as a template. • Electronic and superconducting properties of the films are similar to those of bulk β-PdBi{sub 2}. - Abstract: Bulk β-PdBi{sub 2} layered material exhibits advanced properties and is supposed to be probable topological superconductor. We present a method based on molecular beam epitaxy that allows us to grow β-PdBi{sub 2} films from a single β-PdBi{sub 2} triple layer up to the dozens of triple layers, using Bi(111) film on Si(111) as a template. The grown films demonstrate structural, electronic and superconducting properties similar to those of bulk β-PdBi{sub 2} crystals. Ability to grow the β-PdBi{sub 2} films of desired thickness opens the promising possibilities to explore fascinating properties of this advanced material.

  15. Growth and characterization of ZnO thin films prepared by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

    2006-06-15

    ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

  16. Nano Indentation Inspection of the Mechanical Properties of Gold Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Armen Verdyan

    2007-10-01

    Full Text Available The morphology and the local mechanical properties of gold nitride thin films were studied by atomic force microscope (AFM. Gold nitride films were deposited for the first time on silicon substrate without any buffer layer at room temperature by reactive pulsed laser ablation deposition (RPLD. The films were fabricated on (100 Si wafers by RPLD technique in which KrF excimer laser was used to ablate a gold target in N2 atmosphere (0.1 GPa-100 Pa and ambient temperature. Scanning electron microscopy (SEM and atomic force microscopy inspections showed that the films were flat plane with rms roughness in the range of 35.1 nm-3.6 nm, depending on the deposition pressure. Rutherford backscattering spectrometry (RBS and energy dispersion spectroscopy (EDS used to detect the nitrogen concentration in the films, have revealed a composition close to Au3N. The film

  17. Physicochemical, mechanical and thermal properties of chitosan films with and without sorbitol.

    Science.gov (United States)

    Liu, Mei; Zhou, Yibin; Zhang, Yang; Yu, Chen; Cao, Shengnan

    2014-09-01

    The effect of sorbitol on the physicochemical, mechanical and thermal properties of chitosan films with different degrees of deacetylation (DD; i.e., DD85% and DD95%) was investigated. The thickness, moisture content (MC), water solubility (WS) and water-vapor permeability (WVP) of the films were evaluated. Sorbitol addition reduced MC, increased WS and significantly (psorbitol increased the strain and decreased stress for both DD films, but DD95% could sustain higher strain and DD85% could sustain higher stress. Thermogravimetrics analysis and differential scanning calorimetry showed that sorbitol elicited a lower degradation temperature for both films, and that DD95% films exhibited higher thermal stability than DD85% films. Copyright © 2014 Elsevier B.V. All rights reserved.

  18. Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

    International Nuclear Information System (INIS)

    Flötotto, D.; Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

    2014-01-01

    The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al 2 O 3 films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively

  19. Influence of Te and Se doping on ZnO films growth by SILAR method

    Science.gov (United States)

    Güney, Harun; Duman, Ćaǧlar

    2016-04-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  20. Influence of Te and Se doping on ZnO films growth by SILAR method

    International Nuclear Information System (INIS)

    Güney, Harun; Duman, Çağlar

    2016-01-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  1. Influence of Te and Se doping on ZnO films growth by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Güney, Harun, E-mail: harunguney25@hotmail.com [Department of Electric and Energy, Vocation High School, Ağrı İbrahim Çeçen University (Turkey); Duman, Çağlar, E-mail: caglarduman@erzurum.edu.tr [Department of Electrical and Electronic Engineering, Faculty of Engineering, Erzurum Technical University (Turkey)

    2016-04-18

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  2. Mechanistic Insights into Growth of Surface‐Mounted Metal‐Organic Framework Films Resolved by Infrared (Nano‐) Spectroscopy

    OpenAIRE

    Delen, Guusje; Ristanović, Zoran; Mandemaker, Laurens D. B.; Weckhuysen, Bert M.

    2017-01-01

    Abstract Control over assembly, orientation, and defect‐free growth of metal‐organic framework (MOF) films is crucial for their future applications. A layer‐by‐layer approach is considered a suitable method to synthesize highly oriented films of numerous MOF topologies, but the initial stages of the film growth remain poorly understood. Here we use a combination of infrared (IR) reflection absorption spectroscopy and atomic force microscopy (AFM)‐IR imaging to investigate the assembly and gro...

  3. Transport, mechanical and global migration data of multilayer copolyamide nanocomposite films with different layouts.

    Science.gov (United States)

    Scarfato, P; Garofalo, E; Di Maio, L; Incarnato, L

    2017-06-01

    Transport, mechanical and global migration data concern multilayer food packaging films with different layouts, all incorporating a layered silicate/polyamide nanocomposite as oxygen barrier layer, and a low-density polyethylene (LDPE) as moisture resistant layer in direct contact with food. The data are related to "Tuning of co-extrusion processing conditions and film layout to optimize the performances of PA/PE multilayer nanocomposite films for food packaging" by Garofalo et al. (2017) [1]. Nanocomposite multilayer films, with different relative layer thicknesses and clay types, were produced using a laboratory scale co-extrusion blown-film equipment and were analyzed in terms of transport to oxygen and water vapor, mechanical properties and overall migration. The results have shown that all the multilayer hybrid films, based on the copolyamide layer filled with Cloisite 30B, displayed the most significant oxygen barrier improvements and the best mechanical properties compared to the unfilled films. No significant alteration of the overall migration values was observed, as expectable [2], [3], [4]. The performance improvement was more relevant in the case of the film with the thinner nanocomposite layer.

  4. On the mechanics of thin films and growing surfaces

    KAUST Repository

    Holland, M. A.; Kosmata, T.; Goriely, A.; Kuhl, E.

    2013-01-01

    these classical model problems in botany: it can be easily extended to model and predict surface growth in asthma, gastritis, obstructive sleep apnoea, brain development, and tumor invasion. Beyond biology and medicine, surface growth models are valuable tools

  5. Anisotropic Growth of Otavite on Calcite: Implications for Heteroepitaxial Growth Mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Riechers, Shawn L.; Kerisit, Sebastien N.

    2017-12-18

    Elucidating how cation intermixing can affect the mechanisms of heteroepitaxial growth in aqueous media has remained a challenging endeavor. Toward this goal, in situ atomic force microscopy was employed to image the heteroepitaxial growth of otavite (CdCO3) at the (10-14) surface of calcite (CaCO3) single crystals in static aqueous conditions. Heteroepitaxial growth proceeded via spreading of three-dimensional (3D) islands and two-dimensional (2D) atomic layers at low and high initial saturation levels, respectively. Experiments were carried out as a function of applied force and imaging mode thus enabling determination of growth mechanisms unaltered by imaging artifacts. This approach revealed the significant anisotropic nature of heteroepitaxial growth on calcite in both growth modes and its dependence on supersaturation, intermixing, and substrate topography. The 3D islands not only grew preferentially along the [42-1] direction relative to the [010] direction, resulting in rod-like surface precipitates, but also showed clear preference for growth from the island end rich in obtuse/obtuse kink sites. Pinning to step edges was observed to often reverse this tendency. In the 2D growth mode, the relative velocities of acute and obtuse steps were observed to switch between the first and second atomic layers. This phenomenon stemmed from the significant Cd-Ca intermixing in the first layer, despite bulk thermodynamics predicting the formation of almost pure otavite. Composition effects were also responsible for the inability of 3D islands to grow on 2D layers in cases where both modes were observed to occur simultaneously. Overall, the AFM images highlighted the effects of intermixing on heteroepitaxial growth, particularly how it can induce thickness-dependent growth mechanisms at the nanoscale.

  6. Smooth Growth of Organic Semiconductor Films on Graphene for High-Efficiency Electronics

    NARCIS (Netherlands)

    Hlawacek, G.; Khokhar, F.S.; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

    2011-01-01

    High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron

  7. Plasma deposition of thin film silicon at low substrate temperature and at high growth rate

    NARCIS (Netherlands)

    Verkerk, A.D.|info:eu-repo/dai/nl/304831719

    2009-01-01

    To expand the range of applications for thin film solar cells incorporating hydrogenated amorphous silicon (a-Si:H) and hydrogenated nanocrystalline silicon (nc-Si:H), the growth rate has to be increased 0.5 or less to several nm/s and the substrate temperature should be lowered to around 100 C. In

  8. Growth and characterization of Hg 1– Cd Te epitaxial films by ...

    Indian Academy of Sciences (India)

    Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

  9. Plasma processes and film growth of expanding thermal plasma deposited textured zinc oxide

    NARCIS (Netherlands)

    Groenen, R.; Linden, J.L.; Sanden, van de M.C.M.

    2005-01-01

    Plasma processes and film growth of textured zinc oxide deposited from oxygen and diethyl zinc utilizing expanding thermal argon plasma created by a cascaded arc is discussed. In all conditions explored, an excess of argon ions and low temperature electrons is available, which represent the

  10. Growth and characterization of Hg1–xCdxTe epitaxial films by ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Growth of Hg1–xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy. (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication.

  11. On the preparation and growth of a-Si:H thin films by Hg-sensitised ...

    African Journals Online (AJOL)

    It also recall and summarizes some fundamental issues such experimental systems or apparatus particularities, the analysis of gas-phase reactions in the reactor, the surface reaction model of SiH3 and H during the film growth and all the kinetic model for lamp induced Photo-CVD. Key words: Hydrogenated Amorphous ...

  12. Growth optimization and electronic structure of ultrathin CoO films on Ag(001): A LEED and photoemission study

    Science.gov (United States)

    Barman, Sukanta; Menon, Krishnakumar S. R.

    2018-04-01

    We present here a detailed growth optimization of CoO thin film on Ag(001) involving the effects of different growth parameters on the electronic structure. A well-ordered stoichiometric growth of 5 ML CoO film has been observed at 473 K substrate temperature and 1 × 10-6 mbar oxygen partial pressure. The growth at lower substrate temperature and oxygen partial pressure show non-stoichiometric impurity phases which have been investigated further to correlate the growth parameters with surface electronic structure. The coverage dependent valence band electronic structure of the films grown at optimized condition reveals the presence of interfacial states near the Fermi edge (EF) for lower film coverages. Presence of interfacial states in the stoichiometric films rules out their defect-induced origin. We argue that this is an intrinsic feature of transition metal monoxides like NiO, CoO, MnO in the low coverage regime.

  13. On the mechanical effects of a nanocrystallisation treatment for ZrO2 oxide films growing on a zirconium alloy

    International Nuclear Information System (INIS)

    Panicaud, B.; Grosseau-Poussard, J.-L.; Retraint, D.; Guérain, M.; Li, L.

    2013-01-01

    Highlights: ► Raman spectroscopy is performed to determine the stress evolution in a Zr/ZrO 2 system. ► Analytical relations are used to determine material characteristics. ► A specific modelling of the mechanical fields within the oxide is done. ► Relaxation and growth parameters are identified from an inverse method. - Abstract: In the present work, mechanical features are investigated in the case of ZrO 2 thermal oxide films growing on a Zr alloy at the temperature of 550 °C. The effects of a nanocrystallisation treatment on high temperature oxidation of a zirconium alloy are specifically studied. High temperature oxidation is performed in order to show benefits of such a nanocrystallisation on corrosion resistance and its influence on the mechanical fields. Experimental results obtained by Raman spectroscopy give the growth stress evolution in ZrO 2 films. Using a modelling of the system, both asymptotic forms and an optimization procedure are developed to determine the mechanical characteristic parameters of the system.

  14. Effects of pH and Salts on Physical and Mechanical Properties of Pea Starch Films.

    Science.gov (United States)

    Choi, W S; Patel, D; Han, J H

    2016-07-01

    To identify the significant contribution of intermolecular hydrogen bonds of starch molecules to the film structure formation, pH of film-forming solutions was adjusted and also various salts (NaCl, CaCl2 , CaSO4 , and K2 SO4 ) were mixed into the glycerol-plasticized pea starch film. The film made from pH 7 possessed the highest tensile strength-at-break (2 times) and elastic modulus (4 to 15 times) and the lowest elongation-at-break compared with those of the films made from acid and alkali environments. The pH 7 film also has the highest film density and the lowest total soluble matter. At the level of 0.01 to 0.1 M of CaSO4 and 0.1 M of K2 SO4 in a kilogram of starch, the water solubility of the film increased, while chloride salts slightly lowered the solubility. NaCl and CaSO4 reduced water vapor permeability (WVP), while CaCl2 slightly increased WVP at 0.01 and 0.06 M concentrations, and K2 SO4 significantly increased WVP at 0.03 and 0.15 M. Presence of salts increased tensile strength (5 to 14 times than the control films) and elastic modulus (35 to 180 times) of starch film at 0.01 to 0.03 M of CaSO4 and K2 SO4 . Elongation-at-break increased significantly as salt concentration increases to an optimal level. However, when the concentration exceeded above the optimal level, the E of starch films decreased and showed no significant difference from the control film. Overall, the addition of salts modified physical and mechanical properties of pea starch films more than pH adjustment without any salt addition. © 2016 Institute of Food Technologists®

  15. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  16. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-01-01

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

  17. Corrosion resistance and biocompatibility of zirconium oxynitride thin film growth by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G. I.; Olaya, J. J.; Clavijo, D.; Alfonso, J. E. [Universidad Nacional de Colombia, Carrera 45 No. 26-85, AA 14490 Bogota D. C. (Colombia); Bethencourt, M., E-mail: jealfonsoo@unal.edu.co [Universidad de Cadiz, Centro Andaluz de Ciencia y Tecnologia Marinas, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Av. Republica de Saharaui, Puerto Real, E-11510 Cadiz (Spain)

    2012-07-01

    Thin films of zirconium oxynitride were grown on common glass, silicon (100) and stainless steel 316 L substrates using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (Sem) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The corrosion resistance studies were made on samples of stainless steel 316 L coated and uncoated with Zr{sub x}N{sub y}O films, through of polarization curves. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316 L through proliferation and cellular adhesion. The XRD analysis shows that films deposited at 623 K, with a flow ratio {Phi}N{sub 2}/{Phi}O{sub 2} of 1.25 and a total deposit time of 30 minutes grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The Sem analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. The analysis of the corrosion resistant, shows that the stainless steel coated with the film was increased a factor 10. Finally; through the analysis of the biocompatibility we established that the films have a better surface than the substrate (stainless steel 316 L) in terms of the adhesion and proliferation of bone cells. (Author)

  18. Synthesis and biological characterization of zirconium oxynitride thin film growth by radio-frequency sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I. [Departamento de Química, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Olaya, J.J. [Facultad de Ingeniería, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Clavijo, D. [Facultad de Medicina, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Alfonso, J.E., E-mail: jealfonsoo@unal.edu.co [Grupo de materiales con Aplicaciones Tecnológicas, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Cardozo, C. [Instituto de Biotecnología, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia)

    2013-02-01

    Thin films of zirconium oxynitride were grown on common glass, silicon substrates (100) and on stainless steel 316L using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological, and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (SEM) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316L through proliferation and cellular adhesion. The XRD analysis showed that films deposited at 623 K, with a flow ratio ΦN{sub 2}/ΦO{sub 2} of 1.25 and a total deposit time of 30 min grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The SEM analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. Finally, through the analysis of the biocompatibility, we established that the films have a better surface than the substrate (stainless steel 316L) in terms of adhesion and proliferation of bone cells. - Highlights: ►ZrO{sub x}N{sub y} thin films were deposited using reactive radio-frequency magnetron sputtering. ►We studied the effect of deposition parameters on ZrO{sub x}N{sub y} thin films microstructure. ►We have been able to grow bone cells on ZrO{sub x}N{sub y} coated stainless steel 316L.

  19. Mechanical and microstructure studies on the modification of CA film ...

    Indian Academy of Sciences (India)

    Unknown

    in this investigation. This synthetic polymer apart from its compatible nature imparts strength to the film. Effective utilization of the modified cellulose and the waste PS materials would help in solving the disposable problem. Additionally, the end product, in the form of filtration membrane with variety of industrial and medical.

  20. Optical and mechanical properties of diamond like carbon films ...

    Indian Academy of Sciences (India)

    Diamond like carbon (DLC) films were deposited on Si (111) substrates by microwave electron cyclotron resonance (ECR) plasma chemical vapour deposition (CVD) process using plasma of argon and methane gases. During deposition, a d.c. self-bias was applied to the substrates by application of 13.56 MHz rf power.

  1. Resolving nanoparticle growth mechanisms from size- and time-dependent growth rate analysis

    Science.gov (United States)

    Pichelstorfer, Lukas; Stolzenburg, Dominik; Ortega, John; Karl, Thomas; Kokkola, Harri; Laakso, Anton; Lehtinen, Kari E. J.; Smith, James N.; McMurry, Peter H.; Winkler, Paul M.

    2018-01-01

    Atmospheric new particle formation occurs frequently in the global atmosphere and may play a crucial role in climate by affecting cloud properties. The relevance of newly formed nanoparticles depends largely on the dynamics governing their initial formation and growth to sizes where they become important for cloud microphysics. One key to the proper understanding of nanoparticle effects on climate is therefore hidden in the growth mechanisms. In this study we have developed and successfully tested two independent methods based on the aerosol general dynamics equation, allowing detailed retrieval of time- and size-dependent nanoparticle growth rates. Both methods were used to analyze particle formation from two different biogenic precursor vapors in controlled chamber experiments. Our results suggest that growth rates below 10 nm show much more variation than is currently thought and pin down the decisive size range of growth at around 5 nm where in-depth studies of physical and chemical particle properties are needed.

  2. Epitaxial growth mechanisms of graphene and effects of substrates

    Science.gov (United States)

    Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

    2012-06-01

    The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.

  3. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

    2017-03-13

    The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

  4. The effect of organoclay type on morphology and mechanical properties of polypropylene films: comparative study

    International Nuclear Information System (INIS)

    Gama, D.B.; Calado, J.F.; Duarte, I.S.; Silva, S.M.L.; Andrade, D.L.A.C.S.

    2012-01-01

    This paper aims to compare the effect of the type of organoclay on morphological and mechanical properties of polypropylene films. Thus, were employed two organobentonite synthesized by NanoPol/UFCG (APOC and APOCF) and a organo montmorillonite Cloisite 20A (C20A) from Southern Clay Products (Texas/USA). The PP films and the PP/organoclay hybrids were prepared in a ChillRoll extruder - 16 AX Plastics and characterized by X-ray diffraction and mechanical properties. The results indicate that the incorporation of organobentonite (APOC and APOCF) and organo montmorillonite (C20A) resulted in the formation of PP nanocomposites with predominantly intercalated morphologies. Also indicate that the mechanical behavior of the films obtained with the three clays (APOC APOCF and C20A) was similar suggesting that the organobentonite, modified with national technology, raw material of low cost when compared to commercial organo montmorillonite, can be a viable alternative in the preparation of PP films. (author)

  5. pH-Amplified multilayer films based on hyaluronan: influence of HA molecular weight and concentration on film growth and stability.

    Science.gov (United States)

    Shen, Liyan; Chaudouet, Patrick; Ji, Jian; Picart, Catherine

    2011-04-11

    In this study, we investigate the growth and internal properties of polyelectrolyte multilayer films made of poly(l-lysine) and hyaluronan (PLL/HA) under pH-amplified conditions, that is, by alternate deposition of PLL at high pH and HA at low pH. We focus especially on the influence of the molecular weight of HA in this process as well as on its concentration in solution. Film growth was followed by quartz crystal microbalance and by infrared spectroscopy to quantify the deposited mass and to characterize the internal properties of the films, including the presence of hydrogen bonds and the ionization degree of HA in the films. Film growth was significantly faster for HA of high molecular weight (1300 kDa) as compared with 400 and 200 kDa. PLL was found to exhibit a random structure once deposited in the films. Furthermore, we found that PLL-ending films are more stable when they are placed in PBS than their HA counterparts. This was explained on the basis of more cohesive interactions in the films for PLL-ending films. Finally, we quantified PLL(FITC) diffusion into the films and observed that PLL diffusion is enhanced when PLL is paired with the HA of high MW. All together, these results suggest that besides purely physicochemical parameters such as variation in pH, the molecular weight of HA, its concentration in solution, and the possibility to form intermolecular HA association play important roles in film growth, internal cohesion, and stability.

  6. Researching Seeds: Films, Sanitation Methods, Microbiological Growth, Viability, and Selection for New Crops

    Science.gov (United States)

    Padgett, Niki; Smith, Trent

    2018-01-01

    A major factor in long-term human exploration of the solar system is crop growth in microgravity. Space crops can provide fresh, nutritious food to supplement diets for astronauts. Important factors impacting space plant growth and consumption are water delivery to root zone in microgravity, sanitation methods for microbiological safety, plant responses to light quality/spectrum, and identifying optimal edible plants suitable for growth on the International Space Station (ISS). Astronauts growing their own food on the ISS provides necessary data for crop production for long duration deep space missions. The seed film project can be used in Advanced Plant Habitat and Veggies that are currently being utilized on the ISS.

  7. In situ X-ray synchrotron study of organic semiconductor ultra-thin films growth

    International Nuclear Information System (INIS)

    Moulin, J.-F.; Dinelli, F.; Massi, M.; Albonetti, C.; Kshirsagar, R.; Biscarini, F.

    2006-01-01

    In this work we present an X-ray diffraction study of the early stages of growth of an organic semiconductor (sexithiophene, T 6 ) thin film prepared by high vacuum sublimation. Specular reflectometry and grazing incidence X-ray diffraction were used to monitor the formation of T 6 films on silicon oxide. Our results show that T 6 grows as a crystalline layer from the beginning of the evaporation. The reflectometry analysis suggests that, in the range of rates and temperatures studied, the growth is never layer by layer but rather 3D in nature. In-plane GIXD has allowed us to observe for the first time a thin film phase of T 6 formed of molecules standing normal to the substrate and arranged in a compressed unit cell with respect to the bulk, i.e. the unit cell parameters b and c are relatively smaller. We have followed the dynamics of formation of this new phase and identified the threshold of appearance of the bulk phase, which occurs above ∼5-6 monolayers. These results are relevant to the problem of organic thin film transistors, for which we have previously demonstrated experimentally that only the first two monolayers of T 6 films are involved in the electrical transport. The layers above the second one do not effectively contribute to charge mobility, either because they are more 'disordered' or because of a screening of the gate field

  8. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    Licai Wang

    1999-07-01

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  9. Tribology. Mechanisms of antiwear tribofilm growth revealed in situ by single-asperity sliding contacts.

    Science.gov (United States)

    Gosvami, N N; Bares, J A; Mangolini, F; Konicek, A R; Yablon, D G; Carpick, R W

    2015-04-03

    Zinc dialkyldithiophosphates (ZDDPs) form antiwear tribofilms at sliding interfaces and are widely used as additives in automotive lubricants. The mechanisms governing the tribofilm growth are not well understood, which limits the development of replacements that offer better performance and are less likely to degrade automobile catalytic converters over time. Using atomic force microscopy in ZDDP-containing lubricant base stock at elevated temperatures, we monitored the growth and properties of the tribofilms in situ in well-defined single-asperity sliding nanocontacts. Surface-based nucleation, growth, and thickness saturation of patchy tribofilms were observed. The growth rate increased exponentially with either applied compressive stress or temperature, consistent with a thermally activated, stress-assisted reaction rate model. Although some models rely on the presence of iron to catalyze tribofilm growth, the films grew regardless of the presence of iron on either the tip or substrate, highlighting the critical role of stress and thermal activation. Copyright © 2015, American Association for the Advancement of Science.

  10. The microstructure, mechanical and friction properties of protective diamond like carbon films on magnesium alloy

    Science.gov (United States)

    Zou, Y. S.; Wu, Y. F.; Yang, H.; Cang, K.; Song, G. H.; Li, Z. X.; Zhou, K.

    2011-12-01

    Protective hard coatings deposited on magnesium alloys are believed to be effective for overcoming their poor wear properties. In this work, diamond-like carbon (DLC) films as hard protective films were deposited on AZ91 magnesium alloy by arc ion plating under negative pulse bias voltages ranging from 0 to -200 V. The microstructure, composition and mechanical properties of the DLC films were analyzed by scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and nanoindentation. The tribological behavior of uncoated and coated AZ91 magnesium alloy was investigated using a ball-on-disk tribotester. The results show that the negative pulse bias voltage used for film deposition has a significant effect on the sp3 carbon content and mechanical properties of the deposited DLC films. A maximum sp3 content of 33.3% was obtained at -100 V, resulting in a high hardness of 28.6 GPa and elastic modulus of 300.0 GPa. The DLC films showed very good adhesion to the AZ91 magnesium alloy with no observable cracks and delamination even during friction testing. Compared with the uncoated AZ91 magnesium alloy, the magnesium alloy coated with DLC films exhibits a low friction coefficient and a narrow, shallow wear track. The wear resistance and surface hardness of AZ91 magnesium alloy can be significantly improved by coating a layer of DLC protective film due to its high hardness and low friction coefficient.

  11. The microstructure, mechanical and friction properties of protective diamond like carbon films on magnesium alloy

    International Nuclear Information System (INIS)

    Zou, Y.S.; Wu, Y.F.; Yang, H.; Cang, K.; Song, G.H.; Li, Z.X.; Zhou, K.

    2011-01-01

    Protective hard coatings deposited on magnesium alloys are believed to be effective for overcoming their poor wear properties. In this work, diamond-like carbon (DLC) films as hard protective films were deposited on AZ91 magnesium alloy by arc ion plating under negative pulse bias voltages ranging from 0 to -200 V. The microstructure, composition and mechanical properties of the DLC films were analyzed by scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and nanoindentation. The tribological behavior of uncoated and coated AZ91 magnesium alloy was investigated using a ball-on-disk tribotester. The results show that the negative pulse bias voltage used for film deposition has a significant effect on the sp 3 carbon content and mechanical properties of the deposited DLC films. A maximum sp 3 content of 33.3% was obtained at -100 V, resulting in a high hardness of 28.6 GPa and elastic modulus of 300.0 GPa. The DLC films showed very good adhesion to the AZ91 magnesium alloy with no observable cracks and delamination even during friction testing. Compared with the uncoated AZ91 magnesium alloy, the magnesium alloy coated with DLC films exhibits a low friction coefficient and a narrow, shallow wear track. The wear resistance and surface hardness of AZ91 magnesium alloy can be significantly improved by coating a layer of DLC protective film due to its high hardness and low friction coefficient.

  12. The microstructure, mechanical and friction properties of protective diamond like carbon films on magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Y.S., E-mail: yshzou75@gmail.com [School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094 (China); Wu, Y.F.; Yang, H.; Cang, K. [School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094 (China); Song, G.H. [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning, 110178 (China); Li, Z.X.; Zhou, K. [School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094 (China)

    2011-12-01

    Protective hard coatings deposited on magnesium alloys are believed to be effective for overcoming their poor wear properties. In this work, diamond-like carbon (DLC) films as hard protective films were deposited on AZ91 magnesium alloy by arc ion plating under negative pulse bias voltages ranging from 0 to -200 V. The microstructure, composition and mechanical properties of the DLC films were analyzed by scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and nanoindentation. The tribological behavior of uncoated and coated AZ91 magnesium alloy was investigated using a ball-on-disk tribotester. The results show that the negative pulse bias voltage used for film deposition has a significant effect on the sp{sup 3} carbon content and mechanical properties of the deposited DLC films. A maximum sp{sup 3} content of 33.3% was obtained at -100 V, resulting in a high hardness of 28.6 GPa and elastic modulus of 300.0 GPa. The DLC films showed very good adhesion to the AZ91 magnesium alloy with no observable cracks and delamination even during friction testing. Compared with the uncoated AZ91 magnesium alloy, the magnesium alloy coated with DLC films exhibits a low friction coefficient and a narrow, shallow wear track. The wear resistance and surface hardness of AZ91 magnesium alloy can be significantly improved by coating a layer of DLC protective film due to its high hardness and low friction coefficient.

  13. Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

    Science.gov (United States)

    Harunsyah; Yunus, M.; Fauzan, Reza

    2017-06-01

    This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on the additional of zinc oxide by 0.6% and plastilizer by 25%. Based on data of FTIR, the produced film plastic did not change the group function and it can be concluded that theinteraction in film plastic produced was only a physical interaction. Biodegradable plastic film based on cassava starch-zinc oxide and plasticizer glycerol showed that interesting mechanical properties being transparent, clear, homogeneous, flexible, and easily handled.

  14. Growth of high-quality large-area MgB2 thin films by reactive evaporation

    International Nuclear Information System (INIS)

    Moeckly, B H; Ruby, W S

    2006-01-01

    We report a new in situ reactive deposition thin film growth technique for the production of MgB 2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of high-quality MgB 2 films for real-world applications. We have used this growth method, which incorporates a rotating pocket heater, to deposit MgB 2 films on a variety of substrates, including single-crystalline, polycrystalline, metallic, and semiconductor materials up to 4 inch in diameter. This technique allows growth of double-sided, large-area films in the intermediate temperature range of 400-600 deg. C. These films are clean, well-connected, and consistently display T c values of 38-39 K with low resistivity and residual resistivity values. They are also robust and uncommonly stable upon exposure to atmosphere and water. (rapid communication)

  15. Hemicelluloses/montmorillonite hybrid films with improved mechanical and barrier properties

    Science.gov (United States)

    Chen, Ge-Gu; Qi, Xian-Ming; Li, Ming-Peng; Guan, Ying; Bian, Jing; Peng, Feng; Yao, Chun-Li; Sun, Run-Cang

    2015-11-01

    A facile and environmentally friendly method was introduced to incorporate montmorillonite (MMT) as an inorganic phase into quaternized hemicelluloses (QH) for forming hemicellulose-based films. Two fillers, polyvinyl alcohol (PVA) and chitin nanowhiskers (NCH), were added into the hemicelluloses/MMT hybrid matrices to prepare hybrid films, respectively. The hybrid films were nanocomposites with nacre-like structure and multifunctional characteristics including higher strength and good oxygen barrier properties via the electrostatic and hydrogen bonding interactions. The addition of PVA and NCH could induce changes in surface topography, and effectively enhance mechanical strength, thermal stability, transparency, and oxygen barrier properties. The tensile strengths of the composite films FPVA(0.3), FPVA(0.5), and FNCH(0.8) were 53.7, 46.3, and 50.1 MPa, respectively, which were 171%, 134%, and 153% larger than the FQH-MMT film (19.8 MPa). The tensile strength, and oxygen transmission rate of QH-MMT-PVA film were better than those of quaternized hemicelluloses/MMT films. Thus, the proper filler is very important for the strength of the hybrid film. These results provide insights into the understanding of the structural relationships of hemicellulose-based composite films in coating and packaging application for the future.

  16. Comparative study of the mechanical properties of nanostructured thin films on stretchable substrates

    Energy Technology Data Exchange (ETDEWEB)

    Djaziri, S. [Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Renault, P.-O.; Le Bourhis, E.; Goudeau, Ph., E-mail: Philippe.goudeau@univ-poitiers.fr [Institut P' (UPR 3346 CNRS), Université de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Faurie, D. [LSPM, (UPR 3407 CNRS), Université Paris 13, Institut Galilée, 99 avenue Jean-Baptiste Clément, 93430 Villetaneuse (France); Geandier, G. [Institut Jean Lamour (UMR 3079 CNRS), Université de Lorraine, Parc de Saurupt, CS 50840, 54011 NANCY Cedex (France); Mocuta, C.; Thiaudière, D. [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France)

    2014-09-07

    Comparative studies of the mechanical behavior between copper, tungsten, and W/Cu nanocomposite based on copper dispersoïd thin films were performed under in-situ controlled tensile equi-biaxial loadings using both synchrotron X-ray diffraction and digital image correlation techniques. The films first deform elastically with the lattice strain equal to the true strain given by digital image correlation measurements. The Cu single thin film intrinsic elastic limit of 0.27% is determined below the apparent elastic limit of W and W/Cu nanocomposite thin films, 0.30% and 0.49%, respectively. This difference is found to be driven by the existence of as-deposited residual stresses. Above the elastic limit on the lattice strain-true strain curves, we discriminate two different behaviors presumably footprints of plasticity and fracture. The Cu thin film shows a large transition domain (0.60% true strain range) to a plateau with a smooth evolution of the curve which is associated to peak broadening. In contrast, W and W/Cu nanocomposite thin films show a less smooth and reduced transition domain (0.30% true strain range) to a plateau with no peak broadening. These observations indicate that copper thin film shows some ductility while tungsten/copper nanocomposites thin films are brittle. Fracture resistance of W/Cu nanocomposite thin film is improved thanks to the high compressive residual stress and the elimination of the metastable β-W phase.

  17. Characterization of starch films containing starch nanoparticles: part 1: physical and mechanical properties.

    Science.gov (United States)

    Shi, Ai-Min; Wang, Li-Jun; Li, Dong; Adhikari, Benu

    2013-07-25

    We report, for the first time, the preparation method and characteristics of starch films incorporating spray dried and vacuum freeze dried starch nanoparticles. Physical properties of these films such as morphology, crystallinity, water vapor permeability (WVP), opacity, and glass transition temperature (Tg) and mechanical properties (strain versus temperature, strain versus stress, Young's modulus and toughness) were measured. Addition of both starch nanoparticles in starch films increased roughness of surface, lowered degree of crystallinity by 23.5%, WVP by 44% and Tg by 4.3°C, respectively compared to those of starch-only films. Drying method used in preparation of starch nanoparticles only affected opacity of films. The incorporation of nanoparticles in starch films resulted into denser films due to which the extent of variation of strain with temperature was much lower. The toughness and Young's modulus of films containing both types of starch nanoparticles were lower than those of control films especially at <100°C. Copyright © 2012 Elsevier Ltd. All rights reserved.

  18. Fabrication and mechanical characterization of biodegradable and synthetic polymeric films: Effect of gamma radiation

    Science.gov (United States)

    Akter, Nousin; Khan, Ruhul A.; Salmieri, Stephane; Sharmin, Nusrat; Dussault, Dominic; Lacroix, Monique

    2012-08-01

    Chitosan (1 wt%, in 2% aqueous acetic acid solution) and starch (1 wt%, in deionised water) were dissolved and mixed in different proportions (20-80 wt% chitosan) then films were prepared by casting. Tensile strength and elongation at break of the 50% chitosan containing starch-based films were found to be 47 MPa and 16%, respectively. It was revealed that with the increase of chitosan in starch, the values of TS improved significantly. Monomer, 2-butane diol-diacrylate (BDDA) was added into the film forming solutions (50% starch-based), then casted films. The BDDA containing films were irradiated under gamma radiation (5-25 kGy) and it was found that strength of the films improved significantly. On the other hand, synthetic petroleum-based polymeric films (polycaprolactone, polyethylene and polypropylene) were prepared by compression moulding. Mechanical and barrier properties of the films were evaluated. The gamma irradiated (25 kGy) films showed higher strength and better barrier properties.

  19. The microstructure and mechanical properties of multilayer diamond-like carbon films with different modulation ratios

    International Nuclear Information System (INIS)

    Xu Zhaoying; Zheng, Y.J.; Jiang, F.; Leng, Y.X.; Sun Hong; Huang Nan

    2013-01-01

    Highlights: ► The multilayer DLC films with different modulation ratios have been fabricated by FCVA. ► The multilayer DLC films can effectively decrease the residual stress of the DLC films. ► The multilayer DLC film with modulation ratio of 1:1 shows the best wear resistance. - Abstract: The multilayer DLC films consisting of sp 2 -rich DLC layers (soft DLC) and sp 3 -rich DLC layers (hard DLC) with different modulation ratios (thickness ratio of the hard DLC to soft DLC) ranging from 2:1, 1:1 to 1:2 had been deposited on Si (1 0 0) wafer and Ti–6Al–4V alloy substrates by filtered cathodic vacuum arc (FCVA) deposition. The effect of modulation ratio on the microstructure and properties of the multilayer DLC films including sp 3 content, residual stress, mechanical properties, adhesion strength and wear resistance were studied by Raman spectroscopy, profilometry technique, nanoindenter, Vickers indentation test, scanning electron microscopy (SEM) and ball-on-disc reciprocating friction test. The results showed that the sp 3 content and the hardness of the multilayer DLC films decreased with modulation ratios decreasing. The stress of the multilayer DLC films could be effectively reduced and the stress decreased with the modulation ratio decreasing. The multilayer DLC film with modulation ratio of 1:1 had the best wear resistance due to a balance between hardness and residual stress.

  20. Effect of substrate on texture and mechanical properties of Mg-Cu-Zn thin films

    Science.gov (United States)

    Eshaghi, F.; Zolanvari, A.

    2018-04-01

    In this work, thin films of Mg-Cu-Zn with 60 nm thicknesses have been deposited on the Si(100), Al, stainless steel, and Cu substrates using DC magnetron sputtering. FESEM images displayed uniformity of Mg-Cu-Zn particles on the different substrates. AFM micrograph revealed the roughness of thin film changes due to the different kinds of the substrates. XRD measurements showed the existence of strong Mg (002) reflections and weak Mg (101) peaks. Residual stress and adhesion force have been measured as the mechanical properties of the Mg-Cu-Zn thin films. The residual stresses of thin films which have been investigated by X-ray diffraction method revealed that the thin films sputtered on the Si and Cu substrates endure minimum and maximum stresses, respectively, during the deposition process. However, the force spectroscopy analysis indicated that the films grew on the Si and Cu experienced maximum and minimum adhesion force. The texture analysis has been done using XRD instrument to make pole figures of Mg (002) and Mg (101) reflections. ODFs have been calculated to evaluate the distribution of the orientations within the thin films. It was found that the texture and stress have an inverse relation, while the texture and the adhesion force of the Mg-Cu-Zn thin films have direct relation. A thin film that sustains the lowest residual stresses and highest adhesive force had the strongest {001} basal fiber texture.

  1. Mechanical properties of a Gelidium corneum edible film containing catechin and its application in sausages.

    Science.gov (United States)

    Ku, K-J; Hong, Y-H; Song, K B

    2008-04-01

    We prepared an edible Gelidium corneum (GC) film containing catechin and examined the microbial growth and quality change during storage of sausages packaged with the film. Incorporation of catechin in the film improved film tensile strength and water vapor permeability. The film's antimicrobial activity against Eschericha coli O157:H7 increased with increasing catechin concentrations and resulted in a decrease in the populations of the bacteria by 1.93 log CFU/g at 150 mg of catechin. For the sausage samples inoculated with E. coli O157:H7 and Listeria monocytogenes, the samples packed with the GC film showed a decrease in populations of E. coli O157:H7 and L. monocytogenes by 1.81 and 1.44 log CFU/g, respectively, compared to the control after 5 d of storage. In addition, the sausage samples packed with the GC film had lower degrees of lipid oxidation. The results suggest that sausages can be packed with GC film to extend shelf life.

  2. Substrate structure dependence of the growth modes of p-quaterphenyl thin films on gold

    International Nuclear Information System (INIS)

    Muellegger, S.; Mitsche, S.; Poelt, P.; Haenel, K.; Birkner, A.; Woell, C.; Winkler, A.

    2005-01-01

    The variably oriented crystallite surfaces of a recrystallized polycrystalline gold sample served as substrates for the investigation of the structure dependence of p-quaterphenyl (4P) thin film growth. The films were prepared in ultrahigh vacuum by organic molecular beam evaporation. Optical microscopy, scanning electron microscopy, combined with laterally resolved electron backscatter diffraction and scanning tunnelling microscopy have been applied to determine the correlation between the substrate surface structure and 4P film morphology. Crystallite surfaces consisting of (110) terraces favour highly anisotropic needle-like 4P growth with the needle orientation normal to the Au directions. Atomic steps on vicinal planes with narrow terraces (< 2 nm) can also induce anisotropy in the 4P thin film growth, in particular elongated 4P islands normal to the step direction. In contrast to that, a nearly isotropic distribution of the needle orientations is observed on Au grains terminated by highly symmetric (111) or (100) crystal planes. Additionally, patches of continuous 4P layers can be found on these surfaces. There is strong evidence that the 4P molecules within the needle-like crystallites are oriented parallel to the Au surface, whereas for the continuous layers the 4P molecules are oriented nearly upright on the surface

  3. Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

    International Nuclear Information System (INIS)

    Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Shirakata, S.; Matsubara, K.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

    2005-01-01

    Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm 2 /Vsec) was observed and the lowest resistivity (2.0x10 -4 no. OMEGAno. cm) film was obtained from large size grown ZnO TCO of 200x200 mm at low growth temperature of 200 deg. C with high growth rate of 24 no. muno. m/h

  4. Growth of group III nitride films by pulsed electron beam deposition

    International Nuclear Information System (INIS)

    Ohta, J.; Sakurada, K.; Shih, F.-Y.; Kobayashi, A.; Fujioka, H.

    2009-01-01

    We have grown group III nitride films on Al 2 O 3 (0 0 0 1), 6H-SiC (0 0 0 1), and ZnO (0001-bar) substrates by pulsed electron beam deposition (PED) for the first time and investigated their characteristics. We found that c-plane AlN and GaN grow epitaxially on these substrates. It has been revealed that the growth of GaN on atomically flat 6H-SiC substrates starts with the three-dimensional mode and eventually changes into the two-dimensional mode. The GaN films exhibited strong near-band-edge emission in their room temperature photoluminescence spectra. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C. - Graphical abstract: We have grown group III nitride films by pulsed electron beam deposition (PED) and found that the films of group III nitrides grow epitaxially on 6H-SiC and Al 2 O 3 substrates. We also found that the use of PED allows us to reduce the epitaxial growth temperature for GaN down to 200 deg. C.

  5. Growth, Characterization and Device Development in Monocrystalline Diamond Films

    Science.gov (United States)

    1991-09-30

    the conduction mechanisms. Research supported by SD10/1IST & managed by Wright Laboratory 1. J.A. Herb , C. Bailey, K.V. Ravi, and P.A. Dennig, "The...1982 from [951 K. L Moazed, R. Nguyen, and J. R. Zeidler, "Ohmic contacts National Taiwan University, Taiwan , ROC. to semiconducting diamond," IEEE

  6. Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

    Science.gov (United States)

    Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

    2017-10-01

    Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precur