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Sample records for films galvanostatically grown

  1. Surface of Alumina Films after Prolonged Breakdowns in Galvanostatic Anodization

    Directory of Open Access Journals (Sweden)

    Christian Girginov

    2011-01-01

    Full Text Available Breakdown phenomena are investigated at continuous isothermal (20∘C and galvanostatic (0.2–5 mA cm−2 anodizing of aluminum in ammonium salicylate in dimethylformamide (1 M AS/DMF electrolyte. From the kinetic (-curves, the breakdown voltage ( values are estimated, as well as the frequency and amplitude of oscillations of formation voltage ( at different current densities. The surface of the aluminum specimens was studied using atomic force microscopy (AFM. Data on topography and surface roughness parameters of the electrode after electric breakdowns are obtained as a function of anodization time. The electrode surface of anodic films, formed with different current densities until the same charge density has passed (2.5 C cm−2, was assessed. Results are discussed on the basis of perceptions of avalanche mechanism of the breakdown phenomena, due to the injection of electrons and their multiplication in the volume of the film.

  2. Structural, mechanical and magnetic study on galvanostatic electroplated nanocrystalline NiFeP thin films

    Science.gov (United States)

    Kalaivani, A.; Senguttuvan, G.; Kannan, R.

    2018-03-01

    Nickel based alloys has a huge applications in microelectronics and micro electromechanical systems owing to its superior soft magnetic properties. With the advantages of simplicity, cost-effectiveness and controllable patterning, electroplating processes has been chosen to fabricate thin films in our work. The soft magnetic NiFeP thin film was successfully deposited over the surface of copper plate through galvanostatic electroplating method by applying constant current density of 10 mA cm-2 for a deposition rate for half an hour. The properties of the deposited NiFeP thin films were analyzed by subjecting it into different physio-chemical characterization such as XRD, SEM, EDAX, AFM and VSM. XRD pattern confirms the formation of NiFeP particles and the structural analysis reveals that the NiFeP particles were uniformly deposited over the surface of copper substrate. The surface roughness analysis of the NiFeP films was done using AFM analysis. The magnetic studies and the hardness of the thin film were evaluated from the VSM and hardness test. The NiFeP thin films possess lower coercivity with higher magnetization value of 69. 36 × 10-3 and 431.92 Gauss.

  3. A USB-controlled potentiostat/galvanostat for thin-film battery characterization

    Directory of Open Access Journals (Sweden)

    Thomas Dobbelaere

    2017-10-01

    Full Text Available This article describes the design of a low-cost USB-controlled potentiostat/galvanostat which can measure or apply potentials in the range of ±8 V, and measure or apply currents ranging from nanoamps to max. ±25 mA. Precision is excellent thanks to the on-board 20-bit D/A-convertor and 22-bit A/D-convertors. The dual control modes and its wide potential range make it especially suitable for battery characterization. As an example use case, measurements are presented on a lithium-ion test cell using thin-film anatase TiO2 as the working electrode. A cross-platform Python program may be used to run electrochemical experiments within an easy-to-use graphical user interface. Designed with an open hardware philosophy and using open-source tools, all the details of the project (including the schematic, PCB design, microcontroller firmware, and host computer software are freely available, making custom modifications of the design straightforward.

  4. Investigation of in-pile formed corrosion films on zircaloy fuel-rod claddings by impedance spectroscopy and galvanostatic anodization

    International Nuclear Information System (INIS)

    Gebhardt, O.

    1993-01-01

    Hot-cell investigations have been executed to study the corrosion behaviour of irradiated Zircaloy fuel-rod claddings by impedance spectroscopy and galvanostatic anodization. The thickness of the compact oxide at the metal/oxide interface and the thickness of the minimum barrier oxide have been determined at different positions along the claddings. As shown by analysis, both quantities first increase and then decrease with increasing thickness of the total oxide. (author) 6 figs., 33 refs

  5. Electrochemical Formation of Ternary Oxide Films-an EQCM Approach to Galvanostatic Deposition of Alkali Earth Metal Tungstates and Molybdates

    Czech Academy of Sciences Publication Activity Database

    Krtil, Petr; Nishimura, S.; Yoshimura, M.

    1999-01-01

    Roč. 44, 21/22 (1999), s. 3911-3920 ISSN 0013-4686 Grant - others:Research for the Future (JP) 96R06901 Keywords : tungstate * EQCM * oxide thin film deposition * molybdate Subject RIV: CG - Electrochemistry Impact factor: 1.325, year: 1999

  6. Single layer porous gold films grown at different temperatures

    International Nuclear Information System (INIS)

    Zhang Renyun; Hummelgard, Magnus; Olin, Hakan

    2010-01-01

    Large area porous gold films can be used in several areas including electrochemical electrodes, as an essential component in sensors, or as a conducting material in electronics. Here, we report on evaporation induced crystal growth of large area porous gold films at 20, 40 and 60 deg. C. The gold films were grown on liquid surface at 20 deg. C, while the films were grown on the wall of beakers when temperature increased to 40 and 60 deg. C. The porous gold films consisted of a dense network of gold nanowires as characterized by TEM and SEM. TEM diffraction results indicated that higher temperature formed larger crystallites of gold wires. An in situ TEM imaging of the coalescence of gold nanoparticles mimicked the process of the growth of these porous films, and a plotting of the coalescence time and the neck radius showed a diffusion process. The densities of these gold films were also characterized by transmittance, and the results showed film grown at 20 deg. C had the highest density, while the film grown at 60 deg. C had the lowest consistent with SEM and TEM characterization. Electrical measurements of these gold films showed that the most conductive films were the ones grown at 40 deg. C. The conductivities of the gold films were related to the amount of contamination, density and the diameter of the gold nanowires in the films. In addition, a gold film/gold nanoparticle hybrid was made, which showed a 10% decrease in transmittance during hybridization, pointing to applications as chemical and biological sensors.

  7. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  8. Photosensitivity of nanocrystalline ZnO films grown by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Bentes, L.; Casteleiro, C.; Conde, O.; Marques, C.P.; Alves, E.; Moutinho, A.M.C.; Marques, H.P.; Teodoro, O.; Schwarz, R.

    2009-01-01

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al 2 O 3 ), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with θ-2θ scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature

  9. Conductivity and scaling properties of chemically grown granular silver films

    Science.gov (United States)

    Peterson, M. S. M.; Deutsch, M.

    2009-09-01

    We address room-temperature conductivities of chemically grown silver films. Disordered, granular silver films are grown using a modified Tollens reaction. Thick, polycrystalline films are transparent at visible wavelengths, with crystallinity similar to that of silver powders. The measured conductivities are close to those measured by I. V. Antonets, L. N. Kotov, S. V. Nekipelov, and Ye. A. Golubev, Tech. Phys. 49, 306 (2004) in amorphous silver films, however the thickness where bulk conductivity is reached is anomalously high. While measured resistance values do not obey a scaling relation in thickness, accounting for the films' structural porosity through geometrical rescaling of the thickness leads to emergence of the well-known percolation power-law scaling, albeit that of two-dimensional percolating films.

  10. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  11. Alkaline-doped manganese perovskite thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Bibes, M.; Gorbenko, O.; Martinez, B.; Kaul, A.; Fontcuberta, J.

    2000-01-01

    We report on the preparation and characterization of La 1-x Na x MnO 3 thin films grown by MOCVD on various single-crystalline substrates. Under appropriate conditions epitaxial thin films have been obtained. The Curie temperatures of the films, which are very similar to those of bulk samples of similar composition, reflect the residual strain caused by the substrate. The anisotropic magnetoresistance AMR of the films has been analyzed in some detail, and it has been found that it has a two-fold symmetry at any temperature. Its temperature dependence mimics that of the electrical resistivity and magnetoresistance measured at similar fields, thus suggesting that the real structure of the material contributes to the measured AMR besides the intrinsic component

  12. Surface characterisation of GaSb-films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Seemayer, Andreas; Hommes, Alexander; Wandelt, Klaus [Institute for Physical Cchemistry, University of Bonn (Germany); Huemann, Sascha; Vogel, Dirk [Max Planck Institut fuer Eisenforschung, Duesseldorf (Germany); Schulz, Stephan [Department of Chemistry, University of Essen (Germany)

    2009-07-01

    III-V semiconductor films used for opto- and microelectronic devices have traditionally been grown by (MO)MBE and LPE processes. An alternative metal-organic CVD-process, which has been established in the last two decades for high-throughput and low-cost fabrication works for nitrides, phosphides and arsenides, but is problematic for antimonides. In particular, for GaSb films an alternative route is a CVD-process using the heterocyclic single source precursor [{sup t}Bu{sub 2}GaSbEt{sub 2}]{sub 2}. Subject of the present work is the gas phase behaviour of the used precursor under UHV conditions and the surface characterisation of thin GaSb-films, which were grown in a self-made HV-MOCVD reactor on Si(001), by AES, S-XPS and AFM. The results are discussed in terms of a correlation of the electronic properties with the composition and structure of the films.

  13. Photoemission electronic states of epitaxially grown magnetite films

    International Nuclear Information System (INIS)

    Zalecki, R.; Kolodziejczyk, A.; Korecki, J.; Spiridis, N.; Zajac, M.; Kozlowski, A.; Kakol, Z.; Antolak, D.

    2007-01-01

    The valence band photoemission spectra of epitaxially grown 300 A single crystalline magnetite films were measured by the angle-resolved ultraviolet photoemission spectroscopy (ARUPS) at 300 K. The samples were grown either on MgO(0 0 1) (B termination) or on (0 0 1) Fe (iron-rich A termination), thus intentionally presenting different surface stoichiometry, i.e. also different surface electronic states. Four main features of the electron photoemission at about -1.0, -3.0, -5.5 and -10.0 eV below a chemical potential show systematic differences for two terminations; this difference depends on the electron outgoing angle. Our studies confirm sensitivity of angle resolved PES technique on subtleties of surface states

  14. Textured YBCO films grown on wires: application to superconducting cables

    International Nuclear Information System (INIS)

    Dechoux, N; Jiménez, C; Chaudouët, P; Rapenne, L; Sarigiannidou, E; Robaut, F; Petit, S; Garaudée, S; Porcar, L; Soubeyroux, J L; Odier, P; Bruzek, C E; Decroux, M

    2012-01-01

    Efforts to fabricate superconducting wires made of YBa 2 Cu 3 O 7 (YBCO) on La 2 Zr 2 O 7 (LZO) buffered and biaxially textured Ni-5 at.%W (NiW) are described. Wires were manually shaped from LZO buffered NiW tapes. Different diameters were produced: 1.5, 2 and 3 mm. The wires were further covered with YBCO grown by metal organic chemical vapor deposition (MOCVD). We developed an original device in which the round substrate undergoes an alternated rotation of 180° around its axis in addition to a reel-to-reel translation. This new approach allows covering the whole circumference of the wire with a YBCO layer. This was confirmed by energy dispersive x-ray spectroscopy (EDX) analysis coupled to a scanning electron microscope (SEM). For all wire diameters, the YBCO layer thickness varied from 300 to 450 nm, and the cationic composition was respected. Electron backscattering diffraction (EBSD) measurements were performed directly on an as-deposited wire without surface preparation allowing the investigation of the crystalline quality of the film surface. Combining EBSD with XRD results we show that YBCO grows epitaxially on the LZO buffered NiW wires. For the first time, superconductive behaviors have been detected on round substrates in both the rolling and circular direction. J c reached 0.3 MA cm −2 as measured at 77 K by transport and third-harmonic detection. Those preliminary results confirm the effectiveness of the MOCVD for complex geometries, especially for YBCO deposition on small diameter wires. This approach opens huge perspectives for the elaboration of a new generation of YBCO-based round conductors. (paper)

  15. Vapor Phase Sensing Using Metal Nanorod Thin Films Grown by Cryogenic Oblique Angle Deposition

    Directory of Open Access Journals (Sweden)

    Piyush Shah

    2013-01-01

    Full Text Available We demonstrate the chemical sensing capability of silver nanostructured films grown by cryogenic oblique angle deposition (OAD. For comparison, the films are grown side by side at cryogenic (~100 K and at room temperature (~300 K by e-beam evaporation. Based on the observed structural differences, it was hypothesized that the cryogenic OAD silver films should show an increased surface enhanced Raman scattering (SERS sensitivity. COMSOL simulation results are presented to validate this hypothesis. Experimental SERS results of 4-aminobenzenethiol (4-ABT Raman test probe molecules in vapor phase show good agreement with the simulation and indicate promising SERS applications for these nanostructured thin films.

  16. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  17. Electrical Characterization of Ti-Silicate Films Grown by Atomic Layer Chemical Vapor Deposition

    Science.gov (United States)

    Lee, Seungjae; Yong, Kijung

    2007-08-01

    Electrical characterization was performed for Ti-silicate films, which were deposited by atomic layer chemical vapor deposition (ALCVD). Before the deposition of Ti-silicate films, the silicon substrates were pretreated differently using hydrofluoric acid (HF)-etching, chemical oxidation, and thermal oxidation. Regardless of the pretreatment methods, the grown films showed a highly smooth surface with rms below 0.52 nm. The electrical properties of the grown Ti-silicate films showed a strong dependence on the substrate pretreatments. The 5-nm-thick Ti-silicate films grown on hydrogen-passivated Si and chemically oxidized Si showed rather high leakage currents, whereas the films grown on thermally oxidized Si showed low leakage currents below 1× 10-7 A/cm2 at a bias of -1 V. All of the films showed a positive shift in the flatband voltage (VFB) upon annealing. Also, each film showed low a hysteresis below 180 mV and the hysteresis decreased upon annealing.

  18. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

    2006-01-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  19. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  20. Oxide Ceramic Films Grown on 60 Nitinol for NASA and Department of Defense Applications

    Science.gov (United States)

    Miyoshi, Kazuhisa; Street, Kenneth W.; Lukco, Dorothy; Cytron, Sheldon J.

    2005-01-01

    Both the NASA Glenn Research Center and the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) have worked to develop oxide ceramic films grown on 60 nitinol (60-wt% nickel and 40-wt% titanium) to decrease friction and increase wear resistance under unlubricated conditions. In general, oxide and nonoxide ceramic films have unique capabilities as mechanical-, chemical-, and thermal-barrier materials in diverse applications, including high-temperature bearings and gas bearings requiring low friction, wear resistance, and chemical stability. All oxide ceramic films grown on 60 nitinol were furnished by ARDEC, and materials and surface characterization and tribological experiments were conducted at Glenn.

  1. Stress-induced breakdown during galvanostatic anodising of zirconium

    International Nuclear Information System (INIS)

    Van Overmeere, Q.; Proost, J.

    2010-01-01

    Although internal stress is frequently being suggested as a plausible reason for oxide breakdown during valve metal anodising, no direct quantitative evidence has been made available yet. In this work, we anodized sputtered zirconium thin films galvanostatically at room temperature in sulphuric acid until breakdown was observed, and simultaneously measured the internal stress evolution in the oxide in situ, using a high-resolution curvature setup. It was found that the higher the magnitude of the observed internal compressive stress in the oxide, the smaller the oxide thickness at which breakdown occurred. The moment of breakdown was identified from a slope change in the cell voltage evolution, indicative for a decrease in anodising efficiency. The latter presumably occurs as a result of oxygen evolution, initiated by the relative increase of the cubic or tetragonal zirconia phase content relative to the monoclinic one. This was evidenced in turn by comparing electron diffractograms, taken in a transmission electron microscope, before and after breakdown. The critical role of internal stress on oxide breakdown during zirconium anodising can therefore be associated with its promoting effect on the densifying phase transformation of monoclinic oxide.

  2. Thermal stability of amorphous carbon films grown by pulsed laser deposition

    Science.gov (United States)

    Friedmann, T. A.; McCarty, K. F.; Barbour, J. C.; Siegal, M. P.; Dibble, Dean C.

    1996-03-01

    The thermal stability in vacuum of amorphous tetrahedrally coordinated carbon (a-tC) films grown on Si has been assessed by in situ Raman spectroscopy. Films were grown in vacuum on room-temperature substrates using laser fluences of 12, 22, and 45 J/cm2 and in a background gas of either hydrogen or nitrogen using a laser fluence of 45 J/cm2. The films grown in vacuum at high fluence (≳20J/cm2) show little change in the a-tC Raman spectra with temperature up to 800 °C. Above this temperature the films convert to glassy carbon (nanocrystalline graphite). Samples grown in vacuum at lower fluence or in a background gas (H2 or N2) at high fluence are not nearly as stable. For all samples, the Raman signal from the Si substrate (observed through the a-tC film) decreases in intensity with annealing temperature indicating that the transparency of the a-tC films is decreasing with temperature. These changes in transparency begin at much lower temperatures (˜200 °C) than the changes in the a-tC Raman band shape and indicate that subtle changes are occurring in the a-tC films at lower temperatures.

  3. Electrical properties of epitaxially grown VOx thin films

    NARCIS (Netherlands)

    Rata, A.D.; Chezan, A.R; Presura, C.N.; Hibma, T

    2003-01-01

    High quality VOx thin films on MgO(100) substrates were prepared and studied from the structural and electronic point of view. Epitaxial growth was confirmed by RHEED and XRD techniques. The oxygen content of VOx thin films as a function of oxygen flux was determined using RBS. The upper and lower

  4. Silicon nanocrystals embedded in oxide films grown by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Caroline Bonafos

    2016-05-01

    Full Text Available This paper presents a comparison of the results that we obtained and reported over the last few years on the structural, optical and light emitting properties of Si-SiO2 and Si-Al2O3 films that were fabricated using a specific configuration of RF magnetron sputtering. In these films the Si volume fraction, x, varies along the film (which is typically 14 cm long from a value of ~0.1 at one end to ~0.9 at the other end. For the films with x > 0.3, the formation of amorphous Si clusters was observed in as-deposited Si-SiO2 and Si-Al2O3 films. Si nanocrystals (Si-ncs were generated by high-temperature annealing of the films in nitrogen atmosphere. We found that two processes can contribute to the Si-ncs formation: (i the crystallization of the existing amorphous Si inclusions in the as-deposited films, and (ii the thermally stimulated phase separation. Process (i can be responsible for the independence of Si-ncs mean sizes on x in annealed films with x > 0.5. At the same time, difference in the structural and the light emitting properties of the two types of films was observed. For the samples of the same x, the Si-ncs embedded in the Al2O3 host were found to be larger than the Si-ncs in the SiO2 host. This phenomenon can be explained by the lower temperature required for phase separation in Si-Al2O3 or by the lower temperature of the crystallization of Si-ncs in alumina. The latter suggestion is supported by Raman scattering and electron paramagnetic resonance spectra. In contrast with the Si-SiO2, the Si-ncs embedded in Si-Al2O3 films were found to be under tensile stress. This effect was explained by the strains at the interfaces between the film and silica substrate as well as between the Si inclusions and the Al2O3 host. It was also shown that exciton recombination in Si-ncs is the dominant radiative channel in Si-SiO2 films, while the emission from the oxide defects dominates in Si-Al2O3 films. This can be due to the high number of non

  5. Doped nanostructured zinc oxide films grown by electrodeposition.

    Science.gov (United States)

    Donderis, V; Orozco, J; Cembrero, J; Curiel-Esparza, J; Damonte, L C; Hernández-Fenollosa, M A

    2010-02-01

    ZnO thin films doped with either In or Al are n-type oxide materials of interest for application in electronic devices and thin-film solar cells. In this work, the doped ZnO films were electrodeposited at 80 degrees C from an aqueous solution on polycrystalline conductive Indium Tin Oxide covered glass substrates. The incorporation of the dopants into the ZnO film has been verified by energy dispersive X-ray spectrum, X-Ray diffraction and optical transmission analysis. The optical and surface structure properties of the ZnO doped films are strongly affected by the In and Al concentrations in the electrodeposition solution as evidenced by optical transmission and reflection measurements, and scanning electron microscopy.

  6. Development of galvanostatic Fourier transform electrochemical impedance spectroscopy.

    Science.gov (United States)

    Nam, Kwang-Mo; Shin, Dong-Hyup; Jung, Namchul; Joo, Moon G; Jeon, Sangmin; Park, Su-Moon; Chang, Byoung-Yong

    2013-02-19

    Here, we report development of the galvanostatic Fourier transform electrochemical impedance spectroscopy (FTEIS), which monitors impedance of electrochemical reactions activated by current steps. We first derive relevant relations for potential change upon application of a step current, obtain impedances theoretically from the relations by simulation, and verify them with experimental results. The validity of the galvanostatic FTEIS technique is demonstrated by measuring impedances of a semiconductive silicon wafer using the conventional frequency response analysis (FRA), the potentiostatic FTEIS, and the galvanostatic FTEIS methods, and the results are in excellent agreement with each other. This work is significant in that the galvanostatic FTEIS would allow one to record impedance changes during charge/discharge cycles of secondary batteries and fuel cells as well as electrochemically irreversible systems which may produce noise level chronoamperometric currents by potentiostatic techniques.

  7. In-situ optical emission spectrometry during galvanostatic aluminum anodising

    International Nuclear Information System (INIS)

    Mercier, D.; Van Overmeere, Q.; Santoro, R.; Proost, J.

    2011-01-01

    In this study, we report on the use of optical emission spectrometry (OES) for the online detection of changes in the Al concentration ejected in a 1.0 mol dm -3 sulphuric acid electrolyte during galvanostatic anodising of Al thin film substrates. The technique relies on the coupling of an Inductively Coupled Plasma (ICP) spectrometer to a specially designed electrochemical flow cell. This has allowed to correlate, for the first time, the kinetics of Al dissolution to well-established morphological changes related to porous anodic oxide formation and growth. A deconvolution algorithm was first developed in order to decompose the experimental ICP/OES signal into elementary distributions, each one characteristic for a specific kinetic regime. The highest dissolution rate systematically occurred during the first step, associated with barrier oxide formation. This is followed by a systematic decrease in the rate of Al dissolution during pore formation. During steady-state porous oxide growth, the Al dissolution rate increases again, but still remains below the level established during barrier oxide growth. In each of these three kinetic regimes, a linear variation of the Al dissolution rate with current density was observed in the range 0.5-5.0 mA cm -2 , with slope values of, respectively, 35 ± 2, 24 ± 2 and 28 ± 1 μg C -1 . Regarding the temporal transitions between the different regimes, a desynchronisation was observed between the kinetic (dissolution) and morphological transitions, the time offset going in opposite directions for barrier and steady-state porous oxide growth. Finally, using the measured Al dissolution rates, the current density dependence of the film formation efficiency for both porous and barrier oxide growth has been established.

  8. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  9. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  10. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    Science.gov (United States)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  11. Optical properties of Al2O3 thin films grown by atomic layer deposition.

    Science.gov (United States)

    Kumar, Pradeep; Wiedmann, Monika K; Winter, Charles H; Avrutsky, Ivan

    2009-10-01

    We employed the atomic layer deposition technique to grow Al(2)O(3) films with nominal thicknesses of 400, 300, and 200 nm on silicon and soda lime glass substrates. The optical properties of the films were investigated by measuring reflection spectra in the 400-1800 nm wavelength range, followed by numerical fitting assuming the Sellmeier formula for the refractive index of Al(2)O(3). The films grown on glass substrates possess higher refractive indices as compared to the films on silicon. Optical waveguiding is demonstrated, confirming the feasibility of high-index contrast planar waveguides fabricated by atomic layer deposition.

  12. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  13. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Prieto, Pilar, E-mail: pilar.prieto@uam.es [Departamento de Física Aplicada M-12, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Ruiz, Patricia [Departamento de Física Aplicada M-12, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Ferrer, Isabel J. [Departamento de Física de Materiales M-4, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid (Spain); Figuera, Juan de la; Marco, José F. [Instituto de Química Física “Rocasolano”, CSIC, Serrano 119, 28006 Madrid (Spain)

    2015-07-05

    Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K{sup 2} cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm.

  14. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  15. Crystalline thin films of transition metal hexacyanochromates grown under Langmuir monolayer

    International Nuclear Information System (INIS)

    Bagkar, Nitin; Choudhury, Sipra; Kim, Kyung-Hee; Chowdhury, Prasanta; Lee, Sung-Ik; Yakhmi, J.V.

    2006-01-01

    Crystalline films of cobalt, nickel and iron hexacyanochromates (analogues of Prussian blue) were grown at air-water interface using a surfactant monolayer as a template. These films were transferred on suitable substrates and characterized by X-ray diffraction (XRD), cyclic voltammetry and magnetization measurements. XRD patterns confirmed the formation of oriented crystals in {100} direction for all these films. Magnetization data on nickel and iron hexacyanochromate films indicated ferromagnetic behaviour below Curie temperatures of 72 and 21 K, respectively. The methodology adopted by us to grow crystalline films is useful in obtaining magnetic thin films of analogues of Prussian blue with interesting magnetic properties with respect to transition temperatures and nature of magnetic ordering

  16. Characterization of PLD grown WO3 thin films for gas sensing

    Science.gov (United States)

    Boyadjiev, Stefan I.; Georgieva, Velichka; Stefan, Nicolaie; Stan, George E.; Mihailescu, Natalia; Visan, Anita; Mihailescu, Ion N.; Besleaga, Cristina; Szilágyi, Imre M.

    2017-09-01

    Tungsten trioxide (WO3) thin films were grown by pulsed laser deposition (PLD) with the aim to be applied in gas sensors. The films were studied by atomic force microscopy (AFM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and profilometry. To study the gas sensing behavior of these WO3 films, they were deposited on quartz resonators and the quartz crystal microbalance (QCM) method was applied to analyze their gas sensitivity. Synthesis of tetragonal-WO3 films starting from a target with predominantly monoclinic WO3 phase was observed. The films deposited at 300 °C presented a surface topology favorable for the sorption properties, consisting of a film matrix with protruding craters/cavities. QCM prototype sensors with such films were tested for NO2 sensing. The PLD grown WO3 thin films show good sensitivity and fast reaction at room temperature, even in as-deposited state. With the presented technology, the manufacturing of QCM gas sensors is simple, fast and cost-effective, and it is also suitable for energy-effective portable equipment for on-line monitoring of environmental changes.

  17. Strain relaxation in thin films of Cu grown on Ni(001)

    DEFF Research Database (Denmark)

    Rasmussen, F.B.; Baker, J.; Nielsen, M.

    1998-01-01

    Surface X-ray diffraction and kinematical model calculations are used to determine the strain relaxation of embedded wedges with internal (111) facets formed in thin Cu films when grown on Ni(001). We show the wedges to be inhomogenously strained with a large lateral relaxation near the Cu...

  18. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    International Nuclear Information System (INIS)

    Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

    2006-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

  19. Optimized growth conditions of epitaxial SnSe films grown by pulsed laser deposition

    Science.gov (United States)

    Hara, Takamitsu; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

    2017-12-01

    We have grown epitaxial tin monoselenide (SnSe) films on MgO or SrTiO3 (STO) substrates by pulsed laser deposition (PLD) at T s = 473 or 573 K, and investigated the optimized growth condition in terms of crystal orientation, crystallinity, and electrical resistivity. For the PLD procedure, a SnSe x (x = 1.0–1.6) target containing excess Se was used to compensate for the vaporization of Se. The crystal orientation and crystallinity of the SnSe films changed depending on the growth conditions, and the magnitude of the electrical resistivity ρ of the films was closely related to the crystalline nature. The SnSe film grown on the MgO substrate at T s = 573 K using the target with x = 1.4 was the most highly a-axis-oriented and highly crystalized among all of the films investigated in this study. However, the ρ of the film in the bc-plane was about one order of magnitude larger than those of the reported single crystal and the a-axis-oriented crystalline sample fabricated by spark plasma sintering. This larger ρ was suggested to result from the lattice mismatch and/or a small amount of nonstoichiometry in the film.

  20. Ar ions irradiation effects in ZrN thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D.; Socol, G.; Dorcioman, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Simeone, D.; Gosset, D. [CEA/DEN/DANS/DM2S/SERMA/LEPP-LRC CARMEN CEN Saclay France & CNRS/SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, F92292 Chatenay Malabry (France); Behdad, S.; Boesl, B. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Craciun, V., E-mail: valentin.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania)

    2015-05-01

    Highlights: • Polycrystalline and hard ZrN films were grown by pulsed laser deposition technique. • The effect of 800 keV Ar ion irradiation on properties of ZrN films was investigated. • ZrN films irradiated with 10{sup 14} Ar ions/cm{sup 2}did not show major structural changes. • Irradiation with 10{sup 15} Ar ions/cm{sup 2} induced large structural and mechanical changes. - Abstract: Thin ZrN films (<500 nm) were grown on (1 0 0)Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under CH{sub 4} or N{sub 2} atmosphere. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies indicated that the films were very dense and with a smooth surface. The films were used to study the effect of 800 keV Ar ion irradiation on their structure and properties. After irradiation with a dose of 10{sup 14} at/cm{sup 2} the lattice parameter and crystallites size did marginally change. However, after irradiation with a 10{sup 15} at/cm{sup 2} dose, a clear increase in the lattice parameter accompanied by a significant decrease in nanohardness and Young modulus were observed.

  1. Amphoteric Behavior of Impurities in GaN Film Grown on Si Substrate

    Science.gov (United States)

    Cho, Hyun-Ick; Lee, Dong-Sik; Lee, Heon-Bok; Hahm, Sung-Ho; Lee, Jung-Hee

    2007-05-01

    Hall measurement presented that an unintentionally doped uniform and crack-free GaN film grown on n-type (111)-oriented Si substrate with high temperature-grown relatively thin AlN single and multiple buffer layer shows p-type conductivity. The position of valence band maximum at the surface of the film measured by the synchrotron radiation photoemission spectroscopy is below Fermi level at 1.09 eV due to band bending at the surface, which is indicative for the p-type nature of the grown film. The n-channel metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on the GaN layer exhibited normally-off mode operation. This cannot be achieved if the GaN layer is not p-type. It is believed that the spatial coordination of auto-doped Si atoms, out-diffused from the substrate, or carbon complexes from metal-organic (MO) precursor favorably occupy the substitutional nitrogen site of the GaN film when the film is under tensile strain during the growth, which clearly explains that the p-type conduction is originated from the stress dependent amphoteric nature of Si atom and/or carbon complex in GaN.

  2. Use of photoluminescence spectroscopy to characterize the crystalline quality of CdTe films grown by a modified CSVT technique

    International Nuclear Information System (INIS)

    Mendoza-Alvarez, J.G.; Sanchez-Sinencio, F.; Zelaya, O.; Gonzalez-Hernandez, Y.J.; Cardenas, M.; Chao, S.S.

    1987-01-01

    The authors have employed photoluminescence measurements at 10-300 0 K to study the effects of deposition parameters, surface preparation and heat treatment on the properties of CdTe polycrystalline thin films. The films were grown using a modified hot wall close spaced vapor transport system. The authors found strong differences in the photoluminescence spectra of samples grown under different conditions. Heat treatments in the as-grown samples increase the average particle size and reduce the native defect density

  3. Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE

    International Nuclear Information System (INIS)

    Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.

    2012-01-01

    The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.

  4. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  5. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  6. Nondestructive measurement of homoepitaxially grown GaN film thickness with Fourier transform infrared spectroscopy

    Science.gov (United States)

    Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro

    2017-12-01

    In vertical devices containing GaN homoepitaxial layers on GaN substrates, the layer thickness is a key parameter that needs to be clarified before starting the device process. We applied Fourier transform infrared spectroscopy (FT-IR) to a homoepitaxially grown GaN film that consisted of an n--GaN layer. The estimated film thickness from the FT-IR spectrum agreed well with the results of cross-sectional scanning electron microscope cathodoluminescence images. This is the first report of nondestructive film thickness measurements for homoepitaxially grown GaN and indicates the applicability of FT-IR to the nondestructive inspection of vertical GaN power devices.

  7. Structural and nonlinear optical properties of as-grown and annealed metallophthalocyanine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zawadzka, A., E-mail: azawa@fizyka.umk.pl [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Płóciennik, P.; Strzelecki, J. [Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun (Poland); Pranaitis, M.; Dabos-Seignon, S.; Sahraoui, B. [LUNAM Université, Université d' Angers, CNRS UMR 6200, Laboratoire MOLTECH-Anjou, 2 bd Lavoisier, 49045 Angers cedex (France)

    2013-10-31

    The paper presents the Third Harmonic Generation investigation of four metallophtalocyanine (MPc, M = Cu, Co, Mg and Zn) thin films. The investigated films were fabricated by Physical Vapor Deposition in high vacuum onto quartz substrates. MPc thin films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 150 °C or 250 °C. The Third Harmonic Generation spectra were measured to investigate the nonlinear optical properties and their dependence on the structure of the thin film after the annealing process. This approach allowed us to determine the electronic contribution of the third-order nonlinear optical susceptibility χ{sup <3>}{sub elec} of these MPc films and to investigate two theoretical models for explanation of the observed results. We find that the annealing process significantly changes the optical and structural properties of MPc thin films. - Highlights: • Metallophtalocyanine thin films were grown by Physical Vapor Deposition technique. • MPcs thin films were undergone an annealing process in ambient atmosphere. • Third Harmonic spectra were measured to investigate nonlinear optical properties. • The third order nonlinear optical susceptibility χ{sup <3>}{sub elec} was determined. • We report changing both nonlinear optical and structural properties of thin films.

  8. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, A., E-mail: karuppasamy@psnacet.edu.in

    2015-12-30

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO{sub 3} (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO{sub 3}) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O{sub 2} atmosphere. Ti:WO{sub 3} thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10{sup −3}–5.0 × 10{sup −3} mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm{sup 2}) and tungsten (3 W/cm{sup 2}) were kept constant. Ti:WO{sub 3} films deposited at an oxygen pressure of 5 × 10{sup −3} mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm{sup 2}/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm{sup 2}, Qa: 17.72 mC/cm{sup 2}), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO{sub 3} films.

  9. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.

    2015-01-01

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO 3 (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO 3 ) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O 2 atmosphere. Ti:WO 3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10 −3 –5.0 × 10 −3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm 2 ) and tungsten (3 W/cm 2 ) were kept constant. Ti:WO 3 films deposited at an oxygen pressure of 5 × 10 −3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm 2 /C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm 2 , Qa: 17.72 mC/cm 2 ), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO 3 films.

  10. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  11. Simple morphological control of ZnPc thin films grown on subpc underlayer

    International Nuclear Information System (INIS)

    Park, Da Som; Yim, Sang Gyu

    2015-01-01

    Morphological templating in molecular double-layer thin films, i.e., the phenomenon where the surface morphology of the top layer is strongly influenced by that of the underlying layer, was investigated to control the surface nanomorphology of zinc phthalocyanine (ZnPc) thin films. Three types of molecular thin films, ZnPc single-layer, chloro[subphthalocyaninato]boron(III) (SubPc) single-layer, and ZnPc on SubPc (SubPc/ZnPc) double-layer thin films were grown on glass substrates and post-annealed at 250 °C. While the changes in surface roughness and morphology of the ZnPc single layer were negligible during post-annealing, the roughness of the SubPc/ZnPc double layer significantly increased, similar to that of the SubPc single-layer film. However, the lateral size of the surface crystallites of the SubPc/ZnPc film did not change apparently. Consequently, the fabricated regular, nanopillar-like surface morphology obtained by this simple treatment is expected to provide desirable interdigitated donor–acceptor interface with large contact area for small-molecule organic photovoltaic device applications. In addition, the ZnPc and SubPc single-layer thin films showed absorption maxima in different spectral regions; hence, the double-layer film absorbed the incident light effectively in a broader spectral range

  12. N-Type Conductive Ultrananocrystalline Diamond Films Grown by Hot Filament CVD

    Directory of Open Access Journals (Sweden)

    Michael Mertens

    2015-01-01

    Full Text Available We present the synthesis of ultrananocrystalline diamond (UNCD films by application of hot filament chemical vapor deposition (HFCVD. We furthermore studied the different morphological, structural, and electrical properties. The grown films are fine grained with grain sizes between 4 and 7 nm. The UNCD films exhibit different electrical conductivities, dependent on grain boundary structure. We present different contact metallizations exhibiting ohmic contact behavior and good adhesion to the UNCD surface. The temperature dependence of the electrical conductivity is presented between −200 and 900°C. We furthermore present spectroscopic investigations of the films, supporting that the origin of the conductivity is the structure and volume of the grain boundary.

  13. Effects of aluminium doping on zinc oxide transparent thin films grown by filtered vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gontijo, L.C., E-mail: pleooog@gmail.com [Instituto Federal do Espirito Santo, Programa de Pos-Graduacao em Engenharia Metalurgica e de Materiais, Av. Vitoria, 1729, Jucutuquara, 29040-780, Vitoria, ES (Brazil); Machado, R., E-mail: rogerio.machado.2l@gmail.com [Universidade Federal de Sergipe, Departamento de Fisica, Rod. Mal Rondon S/N, Jd Rosa Elze, CEP 49.100-000, Sao Cristovao, SE (Brazil); Nascimento, V.P., E-mail: valberpn@yahoo.com.br [Universidade Federal do Espirito Santo, Departamento de Fisica, Av. Fernando Ferrari, 514 Goiabeiras, CEP 29075-910, Vitoria, ES (Brazil)

    2012-06-25

    Highlights: Black-Right-Pointing-Pointer AZO films prepared by filtered vacuum arc deposition. Black-Right-Pointing-Pointer Systematic variation of Al concentration. Black-Right-Pointing-Pointer Structural, electrical and optical properties analyzed. Black-Right-Pointing-Pointer Optimized system for Al concentration between 4% and 6%. - Abstract: Thin n-type ZnO films doped with different atomic concentrations of aluminium were grown by filtered vacuum arc deposition (FVAD) on glass substrates. The films were deposited using an oxygen working pressure of 2.0 mTorr with an arc current running at two 100 ms pulses s{sup -1}. Structural, optical and electrical properties were investigated to understand the effect of Al doping on ZnO films. The best values were found for an ideal aluminium percentage between 4 and 6 at.%.

  14. Reordering between tetrahedral and octahedral sites in ultrathin magnetite films grown on MgO(001)

    Energy Technology Data Exchange (ETDEWEB)

    Bertram, F.; Deiter, C. [Hamburger Synchrotronstrahlungslabor am Deutschen Elektronen-Synchrotron, Notkestr. 85, 22607 Hamburg (Germany); Schemme, T.; Jentsch, S.; Wollschlaeger, J. [Fachbereich Physik, Universitaet Osnabrueck, Barbarastr. 7, 49069 Osnabrueck (Germany)

    2013-05-14

    Magnetite ultrathin films were grown using different deposition rates and substrate temperatures. The structure of these films was studied using (grazing incidence) x-ray diffraction, while their surface structure was characterized by low energy electron diffraction. In addition to that, we performed x-ray photoelectron spectroscopy and magneto optic Kerr effect measurements to probe the stoichiometry of the films as well as their magnetic properties. The diffraction peaks of the inverse spinel structure, which originate exclusively from Fe ions on tetrahedral sites are strongly affected by the preparation conditions, while the octahedral sites remain almost unchanged. With both decreasing deposition rate as well as decreasing substrate temperature, the integrated intensity of the diffraction peaks originating exclusively from Fe on tetrahedral sites is decreasing. We propose that the ions usually occupying tetrahedral sites in magnetite are relocated to octahedral vacancies. Ferrimagnetic behaviour is only observed for well ordered magnetite films.

  15. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  16. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells

    KAUST Repository

    Peng, Wei

    2016-03-02

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3NH3PbBr3/Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3NH3PbBr3 solar cells to date.

  17. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  18. One-dimensional edge state of Bi thin film grown on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Kawakami, Naoya; Lin, Chun-Liang; Kawai, Maki; Takagi, Noriaki [Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo, Kashiwa 5-1-5, Chiba 277-8561 (Japan); Arafune, Ryuichi [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044 (Japan)

    2015-07-20

    The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.

  19. Extremely smooth YBa 2Cu 3O 7- δ "thin" film grown by liquid phase epitaxy

    Science.gov (United States)

    Hao, Z.; Wu, Y.; Enomoto, Y.; Tanabe, K.; Koshizuka, N.

    2002-02-01

    Extremely smooth single crystal YBa 2Cu 3O 7- δ "thin" films, 1-3 μm thick, have been successfully grown on YBCO-seeded MgO substrates by liquid phase epitaxy. The morphology study on the as-grown samples has revealed a step-flow growth mechanism, with each step height of about 1.1 nm, i.e. the c-axis lattice constant of YBCO. The mean surface roughness in a large 25 μm×25 μm area is ˜0.76 nm, determined by an atomic force microscope. After annealing in pure oxygen, the ˜2 μm thick films exhibit high-quality high- Tc superconductivity with zero resistance transition temperature TC0≈91 K and critical current density JC=4.74×10 4 A/cm 2 (transport measurement with 1 μV/cm criterion) at 77 K.

  20. Photoluminescence properties of ZnO thin films grown by using the hydrothermal technique

    International Nuclear Information System (INIS)

    Sahoo, Trilochan; Jang, Leewoon; Jeon, Juwon; Kim, Myoung; Kim, Jinsoo; Lee, Inhwan; Kwak, Joonseop; Lee, Jaejin

    2010-01-01

    The photoluminescence properties of zinc-oxide thin films grown by using the hydrothermal technique have been investigated. Zinc-oxide thin films with a wurtzite symmetry and c-axis orientation were grown in aqueous solution at 90 .deg. C on sapphire substrates with a p-GaN buffer layer by using the hydrothermal technique. The low-temperature photoluminescence analysis revealed a sharp bound-exciton-related luminescence peak at 3.366 eV with a very narrow peak width. The temperature-dependent variations of the emission energy and of the integrated intensity were studied. The activation energy of the bound exciton complex was calculated to be 7.35 ± 0.5 meV from the temperature dependent quenching of the integral intensities.

  1. Effect of the niobium additions in the passive films potentiostatically grown in a sulphate medium

    International Nuclear Information System (INIS)

    Kuri, S.E.; Martins, M.; D'Alkaine, C.V.

    1984-01-01

    The stability of passive films potentiostatically grown on stainless steel electrodes was studied in a 2 N sulfuric acid. The effect of Niobium contents in the base metal was considered. The reactivation time was measured using the method of Potential Decay Measurements under Open-Circuit Conditions after electrochemical aging in the passivity region, and its influence on the surface oxidation states, was discussed. (Author) [pt

  2. Characterization of interference thin films grown on stainless steel surface by alternate pulse current in a sulphochromic solution

    Directory of Open Access Journals (Sweden)

    Rosa Maria Rabelo Junqueira

    2008-12-01

    Full Text Available The aim of this work was to characterize thin interference films grown on the surface of AISI 304 stainless steel for decorative purposes. Films were grown in a sulphochromic solution at room temperature by an alternating pulse current method. The morphology and chemical state of the elements in the films were investigated by field emission scanning electron microscopy (FESEM, atomic force microscopy (AFM, glow discharge optical emission spectrometry (GDOES, and infrared Fourier transform spectroscopy (FTIR. Depth-sensing indentation (DSI experiments and wear abrasion tests were employed to assess the mechanical resistance of the films. The coloration process resulted in porous thin films which increased the surface roughness of the substrate. The interference films mainly consisted of hydrated chromium oxide containing iron. Increasing film thickness produced different colors and affected the mechanical properties of the coating-substrate system. Thicker films, such as those producing gold and green colors, were softer but more abrasion resistant.

  3. Biocompatibility of GaSb thin films grown by RF magnetron sputtering

    Science.gov (United States)

    Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

    2017-07-01

    GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

  4. Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

    Science.gov (United States)

    Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

    2017-07-01

    Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

  5. Electrical transport and morphological study of PLD-grown nanostructured amorphous carbon thin films

    International Nuclear Information System (INIS)

    Kant, K Mohan; Reddy, N Mahipal; Rama, N; Sethupathi, K; Rao, M S Ramachandra

    2006-01-01

    Nanostructured carbon thin films have been actively investigated recently for their electroresistance (ER) properties. Furthermore, carbon films with nonlinear current-voltage (I-V) characteristics have potential application in field-emission devices. This has motivated us to study the effect of various growth parameters on the physical and morphological properties of carbon films grown by pulsed laser deposition (PLD). Carbon films have been deposited using a graphite target at different partial pressures of argon. The morphology of film surfaces deposited at various growth conditions was monitored using an atomic force microscope (AFM). AFM studies showed nanostructured grain growth with average grain size of about 80-90 nm. As the deposition time was decreased down to 1 min, the grain size was also found to decrease correspondingly. From Raman spectroscopic measurements an increase in the I(D)/I(G) ratio and a decrease in FWHM (G) clearly revealed the promotion of sp 2 hybridization as the substrate temperature increased. All the films show semiconducting behaviour with the dominant conduction process being the three-dimensional (3D) variable range hopping (VRH) mechanism. Nonlinear I-V curves were obtained for carbon films deposited on p-type Si indicating diode-like behaviour. The most significant result of this study was the observation of a large electroresistance value

  6. Thickness dependence of Hall mobility of HWE grown PbTe films

    International Nuclear Information System (INIS)

    Vaya, P.R.; Majhi, J.; Gopalam, B.S.V.; Dattatreyan, C.

    1985-01-01

    Thin epitaxial n-PbTe films of various thicknesses are grown on KCl substrates by hot wall epitaxy (HWE) technique. The X-ray, SEM and TEM studies of these films revealed their single crystalline nature. The Hall mobility (μ/sub H/) of these films is measured by Van der Pauw technique and compared with the numerically calculated values of PbTe. It is observed that μ/sub H/ very strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The constant value of Hall coefficient in the temperature range 77 to 300 K show the extrinsic nature of these films. It is also noticed that the rate of increase of mobility with decreasing temperature becomes higher with film thickness. The diffused scattering mobility due to the size effect is calculated and compared with experimental data. A large discrepancy observed between these two is explained on the basis of the residual mobility contribution. The residual mobility is attributed to overall scattering due to grain boundaries, dislocations, defects, cleavage steps, and other surface effects. (author)

  7. Structural and chemical characterization of terbia thin films grown on hexagonally close packed metal substrates

    Science.gov (United States)

    Cartas, William

    Rare earth oxides (REOs) exhibit favorable catalytic performance for a diverse set of chemical transformations, including both partial and complete oxidation reactions. I will discuss our efforts to develop thin film systems of terbia for model surface science investigations of a REO that is effectively reducible, and which is thus expected to promote complete oxidation chemistry of adsorbed species. The growth of terbia on Cu(111) is shown to produce a complex surface that exhibits multiple phases of the oxide as well as exposed substrate. Growing the film on Pt(111) results in more uniform, single phase, and closed film. We used low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) to characterize the structural properties of terbia thin films grown on Pt(111) in ultrahigh vacuum (UHV) using physical vapor deposition. We find that the REO grows as a high quality Tb2O 3(111) film, and adopts oxygen-deficient fluorite structures wherein the metal cations form a hexagonal lattice in registry with the Pt(111) substrate, while oxygen vacancies are randomly distributed within the film. The Tb 2O3(111) films are thermally stable when heated to 1000 K in UHV. LEED and STM show that a fraction of the Tb2O3 forms hexagonal islands when first deposited, and further depositions typically result in three dimensional growth of the film. The Tb2O3 (111) / Pt(111) system produces a coincidence structure, seen very clearly in LEED images. We have also found that Tb2O3(111) films can be oxidized in UHV by exposure to plasma-generated atomic oxygen beams. The oxidized films have an estimated TbO2 stoichiometry and decompose to Tb2O3 during heating, with O2 desorption starting at about 500 K. Terbia films oxidized at 90 K show a weakly bound state of oxygen that is likely chemisorbed. Temperature programmed reaction spectroscopy (TPRS) studies using methanol show that increased oxygen in the film does not modify the chemical selectivity of the film; however

  8. High efficiency thin film solar cells grown by molecular beam epitaxy (HEFTY)

    Energy Technology Data Exchange (ETDEWEB)

    Mason, N.B.; Barnham, K.W.J.; Ballard, I.M.; Zhang, J. [Imperial College, London (United Kingdom)

    2006-05-04

    The project sought to show the UK as a world leader in the field of thin film crystalline solar cells. A premise was that the cell design be suitable for large-scale manufacturing and provide a basis for industrial exploitation. The study demonstrated (1) that silicon films grown at temperatures suitable for deposition on glass by Gas Phase Molecular Beam Epitaxy gives better PV cells than does Ultra Low Pressure Chemical Vapor Deposition; (2) a conversion energy of 15 per cent was achieved - the project target was 18 per cent and (3) one of the highest reported conversion efficiencies for a 15 micrometre silicon film was achieved. The study was carried out by BP Solar Limited under contract to the DTI.

  9. Preparation and chemical characterization of neodymium-doped molybdenum oxide films grown using spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Alfonso, J. E. [Universidad Nacional de Colombia, Departamento de Fisica, Grupo de Ciencia Materiales y Superficies, AA 5997 Bogota DC (Colombia); Moreno, L. C., E-mail: jealfonsoo@unal.edu.co [Universidad Nacional de Colombia, Departamento de Quimica, AA 5997 Bogota DC (Colombia)

    2014-07-01

    We studied the crystalline, morphology, and surface composition of Nd-doped molybdenum oxide films grown on glass slides through spray pyrolysis. After fabrication, the films were subjected to thermal treatment in oxygen for periods ranging from 2 to 20 hours. The films were structurally characterized though X-ray diffraction (XRD), their bulk chemical composition was determined using Energy-Dispersive X-ray analysis (EDX), and their surface composition was determined using X-ray Photoelectron Spectroscopy (XP S). The XRD results show that the films obtained from different dissolution volumes and at substrate temperature of 300 grades C exhibit the characteristics of the oxygen-deficient molybdenum trioxide Mo{sub 9}O{sub 26} phase. The films subjected to different thermal treatments exhibit a mixture of Mo{sub 9}O{sub 26} and Mo{sub 17}O{sub 47} phases. EDX study shows the energy belonging to the L line of Nd. Finally, films doped with Nd and subjected to a thermal treatment of 20 h were analyzed through XP S, showing the binding energies at the crystalline lattice correspond to Nd{sub 2} (MoO{sub 4}){sub 3} and Nd{sub 2}Mo{sub 2}O{sub 7}. (Author)

  10. Characterization of Co:TiO2 Thin Film Grown by MOCVD Technique

    Science.gov (United States)

    Saripudin, A.; Purnama, W.

    2018-02-01

    The Co:TiO2 thin film was grown on n-type Si(100) by metal organic chemical vapor deposition (MOCVD) technique. The film’s growth parameters are as follow: substrate temperature of 450°C, bubbler temperature of 70°C, reactor chamber pressure of 2 militorr, and growth time of 2 hours. We characterized the structure of film by X-ray Difractometer (XRD), the morphology was characterized by Scanning Electron Microscope (SEM), and the fraction of Co atoms in TiO2 was characterized by Energy Dispersive x-ray Spectroscopy (EDS). The XRD result shows that the Co:TiO2 thin film is an anatase phase crystal dominated by A(213) orientation. Using Warren-Scherrer’s formula, the average grain size of Co:TiO2 is 169 nm. The SEM result shows that the Co:TiO2 film surface is quite coarse with relatively homogeneous grain shape. the average growth rate of Co:TiO2 film is 0.78 μm/h. In addition, the EDS result shows that Co atoms have been incorporated into the film replacing a portion of the Ti atoms by 0.085%.

  11. Infrared reflectance of GaN films grown on Si(001) substrates

    International Nuclear Information System (INIS)

    Zhang, Xiong; Hou, Yong-Tian; Feng, Zhe-Chuan; Chen, Jin-Li

    2001-01-01

    GaN thin films on Si(001) substrates are studied by infrared reflectance (IRR) spectroscopy at room temperature (RT). Variations in the IRR spectral line shape with the microstructure of GaN/Si(011) film are quantitatively explained in terms of a three-component effective medium model. In this model, the nominally undoped GaN film is considered to consist of three elementary components, i.e., single crystalline GaN grains, pores (voids), and inter-granulated materials (amorphous GaN clusters). Such a polycrystalline nature of the GaN/Si(001) films was confirmed by scanning electron microscopy measurements. It was demonstrated that based on the proposed three-component effective medium model, excellent overall simulation of the RT-IRR spectra can be achieved, and the fine structures of the GaN reststrahlen band in the measured RT-IRR spectra can also be interpreted very well. Furthermore, the volume fraction for each component in the GaN/Si(001) film was accurately determined by fitting the experimental RT-IRR spectra with the theoretical simulation. These results indicate that IRR spectroscopy can offer a sensitive and convenient tool to probe the microstructure of GaN films grown on silicon. [copyright] 2001 American Institute of Physics

  12. Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Pengyu; Luo, Tao; Xing, Jie; Xu, Hong; Hao, Huiying; Liu, Hao; Dong, Jingjing

    2017-10-01

    High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.

  13. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  14. Epitaxially-Grown Europium-Doped Barium Titanate Films on Various Substrates for Red Emission.

    Science.gov (United States)

    Hwang, Kyu-Seog; Jeon, Young-Sun; Lee, Young-Hwan; Hwangbo, Seung; Kim, Jin-Tae

    2015-10-01

    Intense red photoluminescence under ultraviolet excitation was observed in epitaxially-grown europium-doped perovskite BaTiO3 thin films deposited on the SrTiO3 (100), MgO (100) and sapphire (0001) substrates using metal carboxylate complexes. Precursor films prepared by spin coating were pyrolyzed at 250 °C for 120 min in argon, followed by final annealing at 850 °C for 60 min in argon. Crystallinity and epitaxy of the films were analyzed by X-ray diffraction θ-2θ scan and pole-figure analysis. Photoluminescence of the thin films at room temperature under 254 nm was confirmed by a fluorescent spectrophotometer. The obtained epitaxial BaTiO3 thin films on the SrTiO3 (100) and MgO (100) substrates show an intense red-emission lines at 615 nm corresponding to the (5)D0 --> (7)F2 transitions on Eu(3+) with broad bands at 595 and 650 nm.

  15. Surface characterisation of MOCVD single source precursor grown GaSb-films

    Energy Technology Data Exchange (ETDEWEB)

    Seemayer, Andreas; Hommes, Alexander; Huemann, Sascha; Wandelt, Klaus [University of Bonn (Germany). Institute for Physical Chemistry; Hunger, Ralf [Hahn-Meitner-Institute Berlin GmbH, Berlin (Germany); Schulz, Stephan [University of Paderborn (Germany). Department Chemie

    2008-07-01

    III-V semiconductor films used for opto- and microelectronic devices have traditionally been grown by (MO)MBE and LPE processes. An alternative metal-organic CVD-process, which has been established in the last two decades for high-throughput and low-cost fabrication works for nitrides, phosphides and arsenides, but is problematic for antimonides. In particular, for GaSb films an alternative route is a CVD-process using the heterocyclic single source precursor [tBu{sub 2}GaSbEt{sub 2}]{sub 2}. Subject of the present work is the investigation of the surface physical properties of the produced films as well as the gas phase behaviour of the used precursor. Therefore films were produced on a Si(100) substrate in a HV-MOCVD reactor and investigated using AES, S-XPS and AFM. In addition, growth experiments under UHV conditions were performed. The results are discussed in terms of a correlation of the electronic properties with the composition and structure of the films.

  16. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  17. ZnS:Co film grown by pulsed laser deposition and optical properties analysis

    Science.gov (United States)

    Gao, Dongwen; Wang, Li; Li, Shufeng

    2017-02-01

    The modification of ZnS by doping method is one of the important directions in the research of ZnS nano materials. Doping of transition metal ions in the ZnS matrix has attracted much attention in recent years. Doping transition metal ions can modulate the emission region of ZnS, and improve the efficiency of fluorescence. The doping concentration in ZnS has determined the distribution, absorption, excitation, emission, and structural properties of particles. Due to ZnS:Co crystal materials have the best characteristics: the stability of the mechanical properties, high emission cross section and wide bandgap tuning at room temperature. So the ZnS:Co film is grown by pulsed laser deposition and the near infrared spectrum properties have analyzed that have researched in theory and experiment. We change the pressure in the vacuum chamber by controlling the pressure of the argon gas to fabricated the ZnS:Co film by PLD, at the same time, we chose three kinds of materials as the substrate of the thin film, and compared the characteristics of the thin films. This method has the advantages of short fabrication time and material saving, so it is good for to detect and research the optical properties of the films of ZnS:Co. A variety of film detection of X-ray diffraction, laser particle size analyzer, UV-Vis spectrophotometer, fluorescence spectrophotometer, morphology, the particle size and optical properties of the samples have tested. From the results, the infrared transmittance of the Co doped ZnS is almost above 90%, and the transmission capacity increases with the increase of pressure. The film thickness decreases with the increase of pressure and there is a sharp peak in absorption spectrum, this point has important significance for studying photoluminescence of the near infrared spectrum.

  18. SEM, EDS, PL and absorbance study of CdTe thin films grown by CSS method

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Torres, M.E.; Silva-Gonzalez, R.; Gracia-Jimenez, J.M. [Instituto de Fisica, BUAP, Apdo. Postal J-48, San Manuel, 72570 Puebla, Pue. (Mexico); Casarrubias-Segura, G. [CIE- UNAM, 62580 Temixco, Morelos (Mexico)

    2006-09-22

    Oxygen-doped CdTe films were grown on conducting glass substrates by the close spaced sublimation (CSS) method and characterized using SEM, EDS, photoluminescence (PL) and absorbance. A significant change in the polycrystalline morphology is observed when the oxygen proportion is increased in the deposition atmosphere. The EDS analysis showed that all samples are nonstoichiometric with excess Te. The PL spectra show emission bands associated with Te vacancies (V{sub Te}), whose intensities decrease as the oxygen proportion in the CSS chamber is increased. The oxygen impurities occupy Te vacancies and modify the surfaces states, improving the nonradiative process. (author)

  19. Interface termination and band alignment of epitaxially grown alumina films on Cu-Al alloy

    Science.gov (United States)

    Yoshitake, Michiko; Song, Weijie; Libra, Jiří; Mašek, Karel; Šutara, František; Matolín, Vladimír; Prince, Kevin C.

    2008-02-01

    Epitaxial ultrathin alumina films were grown on a Cu-9 at. % Al(111) substrate by selective oxidation of Al in the alloy in ultrahigh vacuum. The photoelectron spectra of Al 2p and valence band were measured in situ during oxidation. By analyzing multiple peaks of Al 2p, the interface atomic structure was discussed. The energy difference between the Fermi level of the substrate and the valence band maximum of alumina (band offset) was obtained. The relation between the interface atomic structure and the band offset was compared with the reported first-principles calculations. A novel method for controlling the band offset was proposed.

  20. Characterization of conducting polymer films grown via surface polymerization by ion-assisted deposition

    Science.gov (United States)

    Tepavcevic, Sanja

    2006-04-01

    Optimization of photonic and electronic devices based on conductive polymers, such as polythiophene and polyphenyl, requires the development of processing methods that can control both film chemistry and morphology on the nanoscale. One such method is explored in this thesis: surface polymerization by ion-assisted deposition (SPIAD). Polythiophene and polyphenyl thin films are grown on a silicon surface by SPIAD which uses hyperthermal, mass-selected thiophene cations coincident with alpha-thermal beam of aterthiophene (3T) or p-terphenyl (3P) neutrals. Mass spectrometry and x-ray photoelectron spectroscopy are used to verify polymerization of both 3T and 3P. The optimal conditions for the most efficient polymerization reaction and film growth are found by varying ion/neutral ratio and ion energy. The electronic structures of these films are probed by ultraviolet photoelectron spectroscopy (UPS) and polarized near-edge x-ray absorption fine structure spectroscopy (NEXAFS). The conducting polymer films formed by SPIAD display new valence band features resulting from a reduction in both their band gap and barrier to hole injection. These changes in film electronic structure result from an increase in the electron conjugation length and other changes in film structure induced by SPIAD. Scanning electron microscopy and x-ray diffraction are used to demonstrate that SPIAD can control the overall polythiophene and polyphenyl film morphology through the mediation of adsorption, diffusion, sublimation (desorption), and other thermal film growth events by ion-induced processes including polymerization, sputtering, bond breakage, and energetic mixing. Predicting the electronic properties, growth mechanism and morphology of the SPIAD films should be possible through computer simulations of the controlling phenomenon. Study with first principles density functional theory-molecular dynamics (DFT-MD) simulations indicates that polymerization and fragmentation of ions and

  1. Electrochemical delamination of CVD-grown graphene film: toward the recyclable use of copper catalyst.

    Science.gov (United States)

    Wang, Yu; Zheng, Yi; Xu, Xiangfan; Dubuisson, Emilie; Bao, Qiaoliang; Lu, Jiong; Loh, Kian Ping

    2011-12-27

    The separation of chemical vapor deposited (CVD) graphene from the metallic catalyst it is grown on, followed by a subsequent transfer to a dielectric substrate, is currently the adopted method for device fabrication. Most transfer techniques use a chemical etching method to dissolve the metal catalysts, thus imposing high material cost in large-scale fabrication. Here, we demonstrate a highly efficient, nondestructive electrochemical route for the delamination of CVD graphene film from metal surfaces. The electrochemically delaminated graphene films are continuous over 95% of the surface and exhibit increasingly better electronic quality after several growth cycles on the reused copper catalyst, due to the suppression of quasi-periodical nanoripples induced by copper step edges. The electrochemical delamination process affords the advantages of high efficiency, low-cost recyclability, and minimal use of etching chemicals.

  2. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    KAUST Repository

    Faber, Hendrik

    2017-04-28

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  3. Influence of different carrier gases on the properties of ZnO films grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Wang, Jinzhong

    2008-08-01

    Full Text Available ZnO films were grown on sapphire (001 substrate by atmospheric MOCVD using diethyl zinc and tertiary butanol precursors. The influence of different carrier gases (H2 and He on the properties was analyzed by their structural (XRD, microstructural (SEM and compositional (SIMS characterization. The intensity of the strongest diffraction peak from ZnO (002 plane was increased by about 2 orders of magnitude when He is used as carrier gas, indicating the significant enhancement in crystallinity. The surface of the samples grown using H2 and He carrier gases was composed of leaf-like and spherical grains respectively. Hydrogen [H] content in the film grown using H2 is higher than that using He, indicating that the [H] was influenced by the H2 carrier gas. Ultraviolet emission dominates the low temperature PL spectra. The emission from ZnO films grown using He show higher optical quality and more emission centers.

    Se depositaron películas de ZnO sobre sustratos de zafiro (001 utilizando dietil zinc y butanol terciario como precursores. La influencia de los diferentes gases portadores (H2 y He sobre las propiedades se estudió mediante la caracterización estructural (XRD, microestructural (SEM y composicional (SIMS. La intensidad del pico de difracción más importante del plano (002 del ZnO aumentó en dos órdenes de magnitud cuando se utiliza He como gas portador indicando un incremento significativo de la cristalinidad. La superficie de las muestras crecidas utilizando H2 y He está formada por granos en forma de hoja y de forma esférica respectivamente. El contenido en hidrógeno (H en la película es mayor cuando se utiliza H2 que cuando se utiliza He, indicando que la cantidad de hidrógeno está influenciada por el H2 del gas portador. La emisión ultravioleta domina el espectro PL de baja temperatura. La emisión de las películas de ZnO utilizando

  4. The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.

    Science.gov (United States)

    Cholula-Díaz, Jorge L; Barzola-Quiquia, José; Videa, Marcelo; Yin, Chunhai; Esquinazi, Pablo

    2017-09-13

    Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N 2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films on a- and r-plane sapphire have grown with orientations along the [0002] and [112[combining macron]0] directions, respectively. Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample grown on the a-plane sapphire substrate. Room temperature impedance spectroscopy measurements were performed in an alternating current frequency range from 40 to 10 5 Hz in the dark and under normal light. An unusual positive photoresistance effect is observed at frequencies above 100 kHz, which we suggest to be due to intrinsic defects present in the ZnO thin films. Furthermore, an analysis of the optical time response revealed that the film grown on the r-plane sapphire substrate responds faster (characteristic relaxation times for τ 1 , τ 2 and τ 3 of 0.05, 0.26 and 6.00 min, respectively) than the film grown on the a-plane sapphire substrate (characteristic relaxation times for τ 1 , τ 2 and τ 3 of 0.10, 0.73 and 4.02 min, respectively).

  5. Effect of disorder on carrier transport in ZnO thin films grown by atomic layer deposition at different temperatures

    Science.gov (United States)

    Saha, D.; Das, Amit. K.; Ajimsha, R. S.; Misra, P.; Kukreja, L. M.

    2013-07-01

    We have grown ˜200 nm thick ZnO films on (0001) sapphire substrates using atomic layer deposition at different substrate temperatures ranging from ˜150 to 350 °C. X-ray diffraction and photoluminescence spectra of these films showed that crystalline and compositional native defects were strongly dependent on the substrate temperature. Room temperature Hall measurement showed that all the films were degenerate with carrier concentration exceeding the Mott's critical density nc required for metallic conduction. The lowest value of room temperature resistivity ˜3.6 × 10-3 Ω cm was achieved for the film deposited at ˜200 °C, which had an estimated carrier concentration ˜5.7 × 1019 cm-3 and mobility ˜30 cm2/V s. The films deposited both below and above ˜200 °C showed increased resistivity and decreased mobility presumably due to the intensified defects and deteriorated crystalline quality of these films. To investigate the effect of disorder on the underlying charge transport mechanisms in these films, the electrical resistivity was measured in the temperature range of ˜4.2 to 300 K. The films grown at ˜150, 300, and 350 °C were found to be semiconducting in the entire range of the measurement temperature due to the intensified disorder which impeded the metallic transport in these films. However, the films grown at ˜200 and 250 °C showed a transition from metallic to semiconducting transport behaviour at lower temperatures due to the reduced defects and improved crystalline quality of these films. The observed semiconducting behaviour below the transition temperature for these films could be well explained by considering quantum corrections to the Boltzmann conductivity which includes the effect of disorder induced weak localization and coulomb electron-electron interactions.

  6. Optical investigations of Be doped ZnO films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Mingming, E-mail: andychain@live.cn [Faculty of Science, Jiangsu University, Zhenjiang, Jiangsu 212013 (China); Zhu, Yuan, E-mail: zhuy9@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Chen, Anqi; Shen, Zhen [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Tang, Zikang, E-mail: phzktang@ust.hk [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau (China)

    2016-06-15

    Highlights: • The optical properties of Be doped ZnO films were investigated. • Low temperature photoluminescence spectrum was dominated by D°X and DAP emissions. • Shallow acceptor state with ionization energy of 116 meV was found in ZnO:Be films. • It is suggested that the incorporated Be atom might favor formation of Zn vacancies defects. • This work demonstrates that N doping BeZnO might be suitable for fabricating reliable p-type ZnO materials. - Abstract: In this article, the optical properties of ZnO:Be films grown by plasma-assisted molecular beam epitaxy were investigated by the excitation density-dependent and temperature-dependent photoluminescence measurements. The low temperature photoluminescence spectra showed a dominant excitons bound to neutral donors (D°X) emission centered at 3.3540 eV and strong donor-acceptor pair (DAP) transitions at 3.3000 eV. In addition, it showed that the intensity ratio of the DAP and D°X peaks changed with background electron concentration. Furthermore, a shallow acceptor state with ionization energy of 116 meV was found and attributed to Zn vacancy. The present study further suggests that Be and N codoping ZnO might be suitable for fabricating reliable p-type ZnO materials.

  7. Reproducibility and off-stoichiometry issues in nickelate thin films grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Daniele Preziosi

    2017-01-01

    Full Text Available Rare-earth nickelates are strongly correlated oxides displaying a metal-to-insulator transition at a temperature tunable by the rare-earth ionic radius. In PrNiO3 and NdNiO3, the transition is very sharp and shows an hysteretic behavior akin to a first-order transition. Both the temperature at which the transition occurs and the associated resistivity change are extremely sensitive to doping and therefore to off-stoichiometry issues that may arise during thin film growth. Here we report that strong deviations in the transport properties of NdNiO3 films can arise in films grown consecutively under nominally identical conditions by pulsed laser deposition; some samples show a well-developed transition with a resistivity change of up to five orders of magnitude while others are metallic down to low temperatures. Through a detailed analysis of in-situ X-ray photoelectron spectroscopy data, we relate this behavior to large levels of cationic off-stoichoimetry that also translate in changes in the Ni valence and bandwidth. Finally, we demonstrate that this lack of reproducibility can be remarkably alleviated by using single-phase NdNiO3 targets.

  8. Electrochemical Energy Storage Applications of CVD Grown Niobium Oxide Thin Films.

    Science.gov (United States)

    Fiz, Raquel; Appel, Linus; Gutiérrez-Pardo, Antonio; Ramírez-Rico, Joaquín; Mathur, Sanjay

    2016-08-24

    We report here on the controlled synthesis, characterization, and electrochemical properties of different polymorphs of niobium pentoxide grown by CVD of new single-source precursors. Nb2O5 films deposited at different temperatures showed systematic phase evolution from low-temperature tetragonal (TT-Nb2O5, T-Nb2O5) to high temperature monoclinic modifications (H-Nb2O5). Optimization of the precursor flux and substrate temperature enabled phase-selective growth of Nb2O5 nanorods and films on conductive mesoporous biomorphic carbon matrices (BioC). Nb2O5 thin films deposited on monolithic BioC scaffolds produced composite materials integrating the high surface area and conductivity of the carbonaceous matrix with the intrinsically high capacitance of nanostructured niobium oxide. Heterojunctions in Nb2O5/BioC composites were found to be beneficial in electrochemical capacitance. Electrochemical characterization of Nb2O5/BioC composites showed that small amounts of Nb2O5 (as low as 5%) in conjunction with BioCarbon resulted in a 7-fold increase in the electrode capacitance, from 15 to 104 F g(-1), while imparting good cycling stability, making these materials ideally suited for electrochemical energy storage applications.

  9. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  10. Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

    International Nuclear Information System (INIS)

    Luka, G.; Witkowski, B.S.; Wachnicki, L.; Jakiela, R.; Virt, I.S.; Andrzejczuk, M.; Lewandowska, M.; Godlewski, M.

    2014-01-01

    Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10 −3 Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10 −3 Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes

  11. Structural and interfacial characteristics of thin (2 films grown by electron cyclotron resonance plasma oxidation on [100] Si substrates

    International Nuclear Information System (INIS)

    Nguyen, T.D.; Carl, D.A.; Hess, D.W.; Lieberman, M.A.; Gronsky, R.

    1991-04-01

    The feasibility of fabricating ultra-thin SiO 2 films on the order of a few nanometer thickness has been demonstrated. SiO 2 thin films of approximately 7 nm thickness have been produced by ion flux-controlled Electron Cyclotron Resonance plasma oxidation at low temperature on [100] Si substrates, in reproducible fashion. Electrical measurements of these films indicate that they have characteristics comparable to those of thermally grown oxides. The thickness of the films was determined by ellipsometry, and further confirmed by cross-sectional High-Resolution Transmission Electron Microscopy. Comparison between the ECR and the thermal oxide films shows that the ECR films are uniform and continuous over at least a few microns in lateral direction, similar to the thermal oxide films grown at comparable thickness. In addition, HRTEM images reveal a thin (1--1.5 nm) crystalline interfacial layer between the ECR film and the [100] substrate. Thinner oxide films of approximately 5 nm thickness have also been attempted, but so far have resulted in nonuniform coverage. Reproducibility at this thickness is difficult to achieve

  12. Acid formic effect in zinc coatings obtained by galvanostatic deposition

    International Nuclear Information System (INIS)

    Lopes, C.; David, M.; Souza, E.C.

    2016-01-01

    Zinc deposits obtained from electrodeposition is widely used for the purpose of protecting steel substrates from corrosion. They are generally added to Zn deposition bath many additives for improving certain characteristics of the deposit. As far as is known there is no information in literature about the effect of formic acid in corrosion resistance of a Zn deposit. Because it is an acid additive, it has the use of cyclohexylamine, in order for the electrolytic bath continue with a pH equal to the one used commercially, around 5. The main goal of this study is analyze the effect of the formic acid addition in the corrosion resistance of an Zn electrodeposition obtained by galvanostatic deposition. The results obtained by performance tests, cyclic voltammetry and X-ray diffraction showed that the formic acid addition may be promising in combating the corrosion of materials. (author)

  13. ZnO and ZnSe thin films grown by Atomic Layer Epitaxy in a gas flow system

    Science.gov (United States)

    Godlewski, Marek; Guziewicz, Elzbieta; Kopalko, Krzysztof; Lusalowska, Elzbieta

    2003-03-01

    In the presentation we will briefly review our recent works on thin films of ZnO and ZnSe for possible applications in opto-electronics. Thin films of ZnO were grown by four different methods on either semiconductor substrates or on a glass plates. The latter system was successfully used as a substrate for deposition of amorphous GaN epilayers, using low temperature plasma-assisted MOCVD technique. Properties of ALE-grown ZnO films and of GaN epilayers grown on ZnO buffer layer will be shortly analyzed. Thin films of ZnSe were grown using synthesis from Zn and Se. These films show bright white color light emission. Temperature of the emission and brightness can be optimized by either modifications in a growth procedure or variations in excitation conditions. Nature of white emission and optimization procedures will be described. This work was partly supported by grant no. PBZ-KBN-044/P03/2001 of KBN. The ALE reactor was bought using SEZAM grant of Foundation for Polish Science.

  14. Structural characterization of Al xGa1-xSb films grown at low temperatures by liquid phase epitaxy

    International Nuclear Information System (INIS)

    Rosendo, E.; Diaz, T.; Martinez, J.; Juarez, H.; Juarez, G.

    2005-01-01

    High resolution X-ray diffraction (HRXRD) and far-infrared reflectivity techniques were applied to characterize Al x Ga 1-x Sb alloys. Layers of Al x Ga 1-x Sb grown by the liquid phase epitaxy technique and deposited on GaSb (100) substrates were obtained in the temperature range of 250 to 450 deg. C. From the HRXRD measurements it can be inferred that the films have good structural characteristics, this is because the lattice mismatch values were no bigger than 0.02% and from the rocking curves the Al concentration was ranged from 0.04 to 0.058. The presence of the ternary alloy in the films was confirmed by reflectivity. A change of the conductivity type in the film was observed for films grown at temperatures lower than 350 deg. C

  15. Microstructural Evolution and Domain Structures of Flux-grown Ferroelectric Thin Films

    Science.gov (United States)

    Burch, Matthew James

    Barium titanate is one of the most commonly utilized dielectric materials for commercial applications. As devices continue to scale smaller, it is necessary to find processing routes that allow for the integration of high-permittivity barium titanate into the thin film geometry. In the bulk, high permittivity barium titanate can be produced at high processing temperatures (>1250°C). This is several hundred degrees higher than many low temperature substrates are able to withstand, which makes integration of high-permittivity barium titanate onto these substrates a challenge.One method to lower the processing temperature and maintain bulk-like permittivity of barium titanate thin films is through the addition of a liquid forming flux. The fluxing agent increases the kinetics of the system while encouraging densification. This increase in kinetics results in large-grained, dense samples, with high dielectric properties at relatively low processing temperatures. In this dissertation, the underlying mechanisms of how the flux system actually impacts the microstructural evolution of physically vapor deposited barium titanate thin films on sapphire substrates is explored. The flux-system utilized is the barium-borate system (BaOB2O3). It will be shown that the flux system results in large-grained, dense barium titanate thin films grown on sapphire. However, the evolution of the microstructure depends on a complex interaction between the liquid forming flux, a reaction between the sapphire substrate and barium titanate, the resulting reactionary phase of BaAl2O4, and {111}-barium titanate twins. (Abstract shortened by ProQuest.).

  16. Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Wang, Ch.Y.; Cimalla, V.; Romanus, H.; Kups, Th.; Niebelschuetz, M.; Ambacher, O.

    2007-01-01

    Tuning of structural and electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2 O 3 (0001) and body-centered cubic In 2 O 3 (001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions

  17. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-01-01

    We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  18. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. High resolution x-ray scattering studies of strain in epitaxial thin films of yttrium silicide grown on silicon (111)

    International Nuclear Information System (INIS)

    Marthinez-Miranda, L.J.; Santiago-Aviles, J.J.; Siegal, M.P.; Graham, W.R.; Heiney, P.A.

    1990-01-01

    The authors have used high resolution grazing incidence x-ray scattering (GIXS) to study the in- plane and out-of-plane structure of epitaxial YSi 2-x films grown on Si(111), with thicknesses ranging from 85 Angstrom to 510 Angstrom. Their results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846 Angstrom/c = 4.142 Angstrom for the 85 Angstrom film to a = 3.877 Angstrom/c = 4.121 Angstrom for the 510 Angstrom film. The authors correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, the authors' measurements show no evidence for the existence of ordered silicon vacancies in the films

  20. Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jaewon; Hwang, Cheol Seong; Park, Sung Jin; Yoon, Neung Ku [Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Sorona Inc., Pyeongtaek, Gyeonggi 451-841 (Korea, Republic of)

    2009-07-15

    Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowest resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.

  1. Zinc sulfide and terbium-doped zinc sulfide films grown by traveling wave reactor atomic layer epitaxy

    CERN Document Server

    Yun, S J; Nam, K S

    1998-01-01

    Zinc sulfide (ZnS) and terbium-doped ZnS (ZnS:Tb) thin films were grown by traveling wave reactor atomic layer epitaxy (ALE). In the present work, ZnCl sub 2 , H sub 2 S, and tris (2,2,6,6-tetramethyl-3,5-heptandionato) terbium (Tb(tmhd) sub 3) were used as the precursors. The dependence of crystallinity and Cl content of ZnS films was investigated on the growth temperature. ZnS and ZnS:Tb films grown at temperatures ranging from 400 to 500 .deg. C showed a hexagonal-2H crystalline structure. The crystallinity of ZnS film was greatly enhanced as the temperature increased. At growth temperatures higher than 450.deg.C, the films showed preferred orientation with mainly (002) diffraction peak. The Cl content decreased from approximately 9 to 1 at.% with the increase in growth temperature from 400 to 500 .deg. C. The segregation of Cl near the surface region and the incorporation of O from Tb(tmhd) sub 3 during ALE process were also observed using Auger electron spectroscopy. The ALE-grown ZnS and ZnS:Tb films re...

  2. As-grown enhancement of spinodal decomposition in spinel cobalt ferrite thin films by Dynamic Aurora pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Debnath, Nipa [Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561 (Japan); Department of Physics, Jagannath University, Dhaka 1100 (Bangladesh); Kawaguchi, Takahiko; Kumasaka, Wataru [Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561 (Japan); Das, Harinarayan [Materials Science Division, Atomic Energy Centre, Dhaka 1000 (Bangladesh); Shinozaki, Kazuo [School of Materials and Chemical Technology, Tokyo Institute of Technology, Tokyo 152-8550 (Japan); Sakamoto, Naonori [Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561 (Japan); Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8561 (Japan); Suzuki, Hisao [Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561 (Japan); Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561 (Japan); Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8561 (Japan); Wakiya, Naoki, E-mail: wakiya.naoki@shizuoka.ac.jp [Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8561 (Japan); Department of Electronics and Materials Science, Shizuoka University, Hamamatsu 432-8561 (Japan); Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8561 (Japan)

    2017-06-15

    Highlights: • As-grown enhancement of spinodal decomposition (SD) in Co{sub x}Fe{sub 3−x}O{sub 4} film is observed. • Magnetic-field-induced ion-impingement enhances SD without any post-annealing. • The enhancement of SD is independent of the lattice-mismatch-induced strain. • This approach can promote SD in any thin film without post-deposition annealing. - Abstract: Cobalt ferrite Co{sub x}Fe{sub 3−x}O{sub 4} thin films with composition within the miscibility gap were grown using Dynamic Aurora pulsed laser deposition. X-ray diffraction patterns reveal as-grown phase separation to Fe-rich and Co-rich phases with no post-deposition annealing. The interconnected surface microstructure of thin film shows that this phase separation occurs through spinodal decomposition enhanced by magnetic-field-induced ion-impingement. The lattice parameter variation of the thin films with the magnetic field indicates that the composition fluctuations can be enhanced further by increasing the magnetic field. Results show that spinodal decomposition enhancement by magnetic-field-induced ion-impingement is independent of the lattice-mismatch-induced strain. This approach can promote spinodal decomposition in any thin film with no post-deposition annealing process.

  3. Magnetic properties of Fe3O4 thin films grown on different substrates by laser ablation

    International Nuclear Information System (INIS)

    Parames, M.L.; Viskadourakis, Z.; Rogalski, M.S.; Mariano, J.; Popovici, N.; Giapintzakis, J.; Conde, O.

    2007-01-01

    Magnetite thin films have been grown onto (1 0 0)Si (1 0 0)GaAs and (0 0 0 1)Al 2 O 3 , at substrate temperatures varying from 473 to 673 K, by UV pulsed laser ablation of Fe 3 O 4 targets in reactive atmospheres of O 2 and Ar, at working pressure of 8 x 10 -2 Pa. The influence of the substrate on stoichiometry, microstructure and the magnetic properties has been studied by X-ray diffraction (XRD), conversion electron Moessbauer spectroscopy (CEMS) and magnetic measurements. Magnetite crystallites, with stoichiometry varying from Fe 2.95 O 4 to Fe 2.99 O 4 , are randomly oriented for (1 0 0)GaAs and (1 0 0)Si substrates and exhibit (1 1 1) texture if grown onto (0 0 0 1)Al 2 O 3 . Interfacial Fe 3+ diffusion, which is virtually absent for (1 0 0)Si substrates, was found for both (0 0 0 1)Al 2 O 3 and (1 0 0)GaAs, with some deleterious effect on the subsequent microstructure and magnetic behaviour

  4. Transport measurements on selective area grown Te-based topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weyrich, Christian; Schall, Melissa; Kampmeier, Joern; Lanius, Martin; Mussler, Gregor; Schaepers, Thomas; Gruetzmacher, Detlev [Peter Gruenberg Institute (PGI- 9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Virtual Institute for Topological Insulators (VITI), Forschungszentrum Juelich GmbH, 52425 Juelich (Germany)

    2015-07-01

    We present magnetotransport measurements on Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films, grown on prepatterned structures atop silicon-on-insulator substrates by molecular beam epitaxy. The substrates contain Si mesa fabricated from the 70nm thick Si(111) top layer on a 300nm thick SiO{sub 2} buried oxide layer. Therefore, we were able to utilize the difference in surface configuration between the Si(111) and the amorphous SiO{sub 2}, since only the hexagonal silicon surface supports growth of the tellurides. Using transport we show that films of comparable or even higher quality can be achieved using this method which furthermore evades the need of any additionally ex-situ patterning of the layers. With this, we pave the road to a simple fabrication method for nanometer sized structures that circumvents common problems of conventional methods like ion etching including hardened remains of photo resist and the like.

  5. Electrical properties of GaAsN film grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Nishimura, K.; Suzuki, H.; Saito, K.; Ohshita, Y.; Kojima, N.; Yamaguchi, M.

    2007-01-01

    The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied, and the influence of the nitrogen-hydrogen bond (N-H) concentration on the hole concentration was investigated. The absorption peak around 936 cm -1 is suggested to be the second harmonic mode of the substitutional N, N As , LVM around 469 cm -1 . The absorption peak around 960 cm -1 is suggested to be the wagging mode of the N-H, where the stretch mode is observed around 3098 cm -1 . The hole concentration linearly increases with increasing N-H concentration, and the slope increases with increasing growth temperature. It indicates that the hole concentration in GaAsN film is determined by both the number of the N-H and unknown defect, such as impurities, vacancies, and interstitials. This defect concentration increases with increasing growth temperature, suggesting that it is determined by Arrhenius type reaction

  6. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  7. Ferrocene carboxaldehyde thin films grown by matrix-assisted pulsed laser evaporation for non linear optical applications

    International Nuclear Information System (INIS)

    Constantinescu, Catalin; Matei, Andreea; Ion, Valentin; Mitu, Bogdana; Ionita, Iulian; Dinescu, Maria; Luculescu, Catalin R.; Vasiliu, Cristina; Emandi, Ana

    2014-01-01

    Thin films of ferrocene carboxaldehyde, also known as cyclopentadienyl(formylcyclopentadienyl)iron, were grown on silicon and glass substrates by matrix-assisted pulsed laser evaporation technique, using a Nd:YAG device operating at 266 nm (4ω). Spectroscopic-ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy and atomic force microscopy investigations revealed that the films are homogeneous in thickness, with dense morphology and without cracks, low surface roughness (∼11 nm), and no significant chemical damage. Second harmonic generation capabilities of the thin films were evidenced by using a femtosecond Ti:sapphire laser.

  8. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    International Nuclear Information System (INIS)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D.

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z 1 ) and nanograins by SILAR (Z 2 ). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10 2 Ω cm) is lower than that of SILAR deposited films (10 5 Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method

  9. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  10. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE

    Science.gov (United States)

    Jantawongrit, P.; Sanorpim, S.; Yaguchi, H.; Orihara, M.; Limsuwan, P.

    2015-08-01

    InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RF-MBE). Prior to the growth of InN film, an InN buffer layer with a thickness of ∼5.5 nm was grown on the substrate. Surface morphology, microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g=11\\bar{2}0 and g = 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains. Project supported by the Thailand Center of Excellence in Physics (ThEP) and the King Mongkut's University of Technology Thonburi under The National Research University Project. One of the authors (S. Sanorpim) was supported by the National Research Council of Thailand (NRCT) and the Thai Government Stimulus Package 2 (TKK2555), under the Project for Establishment of Comprehensive Center for Innovative Food, Health Products and Agriculture.

  11. Hydrothermally synthesized PZT film grown in highly concentrated KOH solution with large electromechanical coupling coefficient for resonator

    Science.gov (United States)

    Feng, Guo-Hua; Lee, Kuan-Yi

    2017-12-01

    This paper presents a study of lead zirconate titanate (PZT) films hydrothermally grown on a dome-shaped titanium diaphragm. Few articles in the literature address the implementation of hydrothermal PZT films on curved-diaphragm substrates for resonators. In this study, a 50-μm-thick titanium sheet is embossed using balls of designed dimensions to shape a dome-shaped cavity array. Through single-process hydrothermal synthesis, PZT films are grown on both sides of the processed titanium diaphragm with good adhesion and uniformity. The hydrothermal synthesis process involves a high concentration of potassium hydroxide solution and excess amounts of lead acetate and zirconium oxychloride octahydrate. Varied deposition times and temperatures of PZT films are investigated. The grown films are characterized by X-ray diffraction and scanning electron microscopy. The 10-μm-thick PZT dome-shaped resonators with 60- and 20-μm-thick supporting layers are implemented and further tested. Results for both resonators indicate that large electromechanical coupling coefficients and a series resonance of 95 MHz from 14 MHz can be attained. The device is connected to a complementary metal-oxide-semiconductor integrated circuit for analysis of oscillator applications. The oscillator reaches a Q value of 6300 in air. The resonator exhibits a better sensing stability when loaded with water when compared with air.

  12. Self-organized single crystal mixed magnetite/cobalt ferrite films grown by infrared pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Figuera, Juan de la, E-mail: juan.delafiguera@iqfr.csic.es [Instituto de Química Física “Rocasolano”, CSIC, Madrid E-28006 (Spain); Quesada, Adrián [Instituto de Cerámica y Vidrio, CSIC, Madrid E-28049 (Spain); Martín-García, Laura; Sanz, Mikel; Oujja, Mohamed; Rebollar, Esther; Castillejo, Marta [Instituto de Química Física “Rocasolano”, CSIC, Madrid E-28006 (Spain); Prieto, Pilar; Muñoz-Martín, Ángel [Universidad Autónoma de Madrid, E-28049 (Spain); Aballe, Lucía [Alba Synchrotron Light Facility, CELLS, Barcelona (Spain); Marco, José F. [Instituto de Química Física “Rocasolano”, CSIC, Madrid E-28006 (Spain)

    2015-12-30

    Highlights: • Infrared pulsed deposition is used to grow single crystal mixed magnetite-cobalt ferrite films. • Distinct topography with two mound types on the surface of the film. • Suggested origin of segregation into two phases is oxygen deficiency during growth. • Mössbauer is required to quantify the two components. - Abstract: We have grown mixed magnetite/cobalt ferrite epitaxial films on SrTiO{sub 3} by infrared pulsed-laser deposition. Diffraction experiments indicate epitaxial growth with a relaxed lattice spacing. The films are flat with two distinct island types: nanometric rectangular mounds in two perpendicular orientations, and larger square islands, attributed to the two main components of the film as determined by Mössbauer spectroscopy. The origin of the segregation is suggested to be the oxygen-deficiency during growth.

  13. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    DEFF Research Database (Denmark)

    Malmivirta, M.; Huhtinen, H.; Yue, Zhao

    2017-01-01

    To study the role of novel Gd2Zr2O7/Ce0.9La0.1O2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa2Cu3O7−δ (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties...... were observed in the YBCO thin films. The structure is also reflected into the improved superconducting properties with the highest critical current densities in films with intermediate thicknesses. Therefore,it can be concluded that the existing buffer layers need more optimization before they can...... be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer...

  14. Crystal orientations of InSb films grown on a Si(111) substrate by inserting AlSb buffer layer

    International Nuclear Information System (INIS)

    Murata, K.; Ahmad, N.B.; Mori, M.; Tambo, T.; Maezawa, K.

    2008-01-01

    The heteroepitaxial growth of InSb film via AlSb buffer layer on a Si(111) substrate was performed in an ultra high vacuum. The grown InSb films were characterized by X-ray diffraction and atomic force microscopy. XRD patterns (Φ-scan) of the samples showed different epitaxial relationship between InSb/Si and InSb/AlSb/Si. It is found that surface condition has a significant influence on the growth of InSb films and the surface of InSb films became rough due to the high mixture ratio of domains. The two-step growth procedure was also tried to further improve the crystal quality of the InSb films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Synthesis of FeCoNi nanoparticles by galvanostatic technique

    International Nuclear Information System (INIS)

    Budi, Setia; Hafizah, Masayu Elita; Manaf, Azwar

    2016-01-01

    Soft magnetic nanoparticles of FeCoNi have been becoming interesting objects for many researchers due to its potential application in electronic devices. One of the most promising methods for material preparation is the electrodeposition which capable of growing nanoparticles alloy directly onto the substrate. In this paper, we report our electrodeposition studies on nanoparticles synthesis using galvanostatic electrodeposition technique. Chemical composition of the synthesized FeCoNi was successfully controlled through the adjustment of the applied currents. It is revealed that the content of each element, obtained from quantitative analysis using atomic absorption spectrometer (AAS), could be modified by the adjustment of current in which Fe and Co content decreased at larger applied currents, while Ni content increased. The nanoparticles of Co-rich FeCoNi and Ni-rich FeCoNi were obtained from sulphate electrolyte at the range of applied current investigated in this work. Broad diffracted peaks in the X-ray diffractograms indicated typical nanostructures of the solid solution of FeCoNi.

  16. Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    José E. Alfonso

    2014-04-01

    Full Text Available The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm. However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.

  17. Wafer bowing control of free-standing heteroepitaxial diamond (100) films grown on Ir(100) substrates via patterned nucleation growth

    International Nuclear Information System (INIS)

    Yoshikawa, Taro; Kodama, Hideyuki; Kono, Shozo; Suzuki, Kazuhiro; Sawabe, Atsuhito

    2015-01-01

    The potential of patterned nucleation growth (PNG) technique to control the wafer bowing of free-standing heteroepitaxial diamond films was investigated. The heteroepitaxial diamond (100) films were grown on an Ir(100) substrate via PNG technique with different patterns of nucleation regions (NRs), which were dot-arrays with 8 or 13 μm pitch aligned to < 100 > or < 110 > direction of the Ir(100) substrate. The wafer bows and the local stress distributions of the free-standing films were measured using a confocal micro-Raman spectrometer. For each NR pattern, the stress evolutions within the early stage of diamond growth were also studied together with a scanning electron microscopic observation of the coalescing diamond particles. These investigations revealed that the NR pattern, in terms of pitch and direction of dot-array, strongly affects the compressive stress on the nucleation side of the diamond film and dominantly contributes to the elastic deformation of the free-standing film. This indicates that the PNG technique with an appropriate NR pattern is a promising solution to fabricate free-standing heteroepitaxial diamond films with extremely small bows. - Highlights: • Wafer bowing control of free-standing heteroepitaxial diamond (100) films • Effect of patterned nucleation and growth (PNG) technique on wafer bowing reduction • Influence of nucleation region patterns of PNG on wafer bowing • Internal stress analysis of PNG films via confocal micro-Raman spectroscopy

  18. Elucidating doping driven microstructure evolution and optical properties of lead sulfide thin films grown from a chemical bath

    Science.gov (United States)

    Mohanty, Bhaskar Chandra; Bector, Keerti; Laha, Ranjit

    2018-03-01

    Doping driven remarkable microstructural evolution of PbS thin films grown by a single-step chemical bath deposition process at 60 °C is reported. The undoped films were discontinuous with octahedral-shaped crystallites after 30 min of deposition, whereas Cu doping led to a distinctly different surface microstructure characterized by densely packed elongated crystallites. A mechanism, based on the time sequence study of microstructural evolution of the films, and detailed XRD and Raman measurements, has been proposed to explain the contrasting microstructure of the doped films. The incorporation of Cu forms an interface layer, which is devoid of Pb. The excess Cu ions in this interface layer at the initial stages of film growth strongly interact and selectively stabilize the charged {111} faces containing either Pb or S compared to the uncharged {100} faces that contain both Pb and S. This interaction interferes with the natural growth habit resulting in the observed surface features of the doped films. Concurrently, the Cu-doping potentially changed the optical properties of the films: A significant widening of the bandgap from 1.52 eV to 1.74 eV for increase in Cu concentration from 0 to 20% was observed, making it a highly potential absorber layer in thin film solar cells.

  19. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    Science.gov (United States)

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  20. Microstructure of epitaxial YBa2Cu3O7-x thin films grown on LaAlO3 (001)

    International Nuclear Information System (INIS)

    Hsieh, Y.; Siegal, M.P.; Hull, R.; Phillips, J.M.

    1990-01-01

    We report a microstructural investigation of the epitaxial growth of YBa 2 Cu 3 O 7-x (YBCO) thin films on LaAlO 3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c (axis normal to the surface and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35--200 nm thick. In 35 nm YBCO films annealed at 850 degree C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy

  1. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Energy Technology Data Exchange (ETDEWEB)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

    2016-12-15

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  2. Superconducting NbN films grown using pulsed laser deposition for potential application in internally shunted Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Anupama; Meng, Xiaofan; Wong, Andre; Van Duzer, Theodore [Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory, University of California, Berkeley, CA 720 1770 (United States)

    1999-11-01

    We have grown superconducting NbN films using a pulsed KrF laser for potential use as superconducting electrodes in SNS Josephson junctions being developed for nonlatching logic applications. The NbN films show a superconducting transition of 16 K using an Nb target in background N{sub 2} gas. The T{sub c} dependence on N{sub 2} pressure in the range of 50-80 mTorr was investigated at a growth temperature of 600 deg. C. The NbN films were grown on MgO(100) and amorphous SiN{sub x}/Si substrates. In the latter case, the films had a lower T{sub c}, and appeared amorphous from x-ray diffraction measurements, while those on the MgO(100) substrates were strongly textured. AFM measurements reveal RMS surface roughness as low as 1 nm, over a 5 {mu}m x 5 {mu}m area, indicating that these films appear suitable for SNS junctions. (author)

  3. Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD

    Directory of Open Access Journals (Sweden)

    Budi Mulyanti

    2008-09-01

    Full Text Available In this paper, the growth of GaN:Mn thin films by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD method is reported. The method used in this study, utilizes a microwave cavity as a cracking cell to produce nitrogen radicals, which in turn reduce the growth temperature. Trimethylgallium (TMGa, nitrogen (N2 and cyclopentadienyl manganese tricarbonyl (CpMnT were used as a source of Ga, N and Mn, respectively, while hydrogen gas was used as a carrier gas for both TMGa and CpMnT. The effect of growth temperature and Mn incorporation on structural properties and surface morphology of GaN:Mn films are presented. The growth of GaN:Mn thin films were conducted at varied growth temperature in range of 625 oC to 700 oC and the Mn/Ga molar fraction in the range of 0.2 to 0.5. Energy dispersive of X-ray (EDX and X-ray diffraction (XRD methods were used to analyze atomic composition and crystal structure of the grown films, respectively. The surface morphology was then characterized using both atomic force microscopy (AFM and scanning electron microscopy (SEM images. A systematic XRD analysis reveal that maximum Mn incorporation that still produces single phase GaN:Mn (0002 is 6.4 % and 3.2 % for the film grown at 650 oC and 700 oC, respectively. The lattice constant and full width at half maximum (FWHM of the single phase films depend on the Mn concentration. The decrease in lattice constant accompanied by the increase in FWHM is due to incorporation of substitutional Mn on the Ga sub-lattice. The maximum values of doped Mn atoms incorporated in the wurtzite structure of GaN:Mn as substitutional atoms on Ga sub-lattice are 2.0 % and 2.5 % at 650 oC and 700 oC, respectively. AFM and SEM images show that the film grown at lower growth temperature and Mn concentration has a better surface than that of film grown at higher growth temperature and Mn concentration.

  4. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  5. The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

    2012-01-01

    The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

  6. Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

    International Nuclear Information System (INIS)

    Yu, C.F.; Chao, D.S.; Chen, Y.-F.; Liang, J.H.

    2013-01-01

    Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO 2 ) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question. In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO 2 films. Our spectral data show that the peak position, at ∼3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO 2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeO x upon ion implantation. Since decreasing of the oxygen-related defects by the GeO x formation is expected to be correlated with the annealing temperature, presence of the GeO x renders further experimental support to the oxygen defect mechanism. This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications

  7. On the relationship between local voltage maxima and efficiency changes during galvanostatic Ti anodising

    International Nuclear Information System (INIS)

    Vanhumbeeck, J.-F.; Ryelandt, L.; Proost, J.

    2009-01-01

    The evolution of the voltage signal with time during galvanostatic anodising of bulk Ti has been repeatedly reported in the literature to exhibit a striking local maximum, followed by a decrease in the slope of the V-t curve. While the slope change is well-known to be the result of changes in the anodic growth efficiency, the presence of an associated local voltage maximum has received much less attention. In the first part of this paper, we investigate the fundamental origin of the local V-maximum, which to the best of our knowledge, is as yet still unexplained. We have first of all reproducibly observed this behaviour during anodising of sputtered Ti thin films in 1.0 M H 2 SO 4 at a current density of 4 mA/cm 2 . Quantifying the evolution of both the thickness and the density of the anodic oxide films with time led to the conclusion that the observed local V-maximum results from an increase of the anodising ratio. It is then demonstrated that, according to the classical high-field theory for ionic migration, such increase in anodising ratio is to be expected when the growth efficiency decreases to such an extent that the ionic current density falls below the mA/cm 2 level. We also show that, once the high-field rate constants for the anodic oxide film have been accurately determined, the local V-maximum can be quantitatively reproduced based only on the evolution of the growth efficiency. In the second part, we discuss the physical origin of the changes in the anodic growth efficiency, based on TEM investigations of the microstructural evolution taking place in the film around the transition region. Our results convincingly demonstrate that anatase crystallites are already present in an amorphous film matrix well before the transition region. Instead, a significant increase in electron diffraction intensity was observed for the rutile phase before and after the local voltage maximum

  8. Dielectric properties of thin C r2O3 films grown on elemental and oxide metallic substrates

    Science.gov (United States)

    Mahmood, Ather; Street, Michael; Echtenkamp, Will; Kwan, Chun Pui; Bird, Jonathan P.; Binek, Christian

    2018-04-01

    In an attempt to optimize leakage characteristics of α-C r2O3 thin films, its dielectric properties were investigated at local and macroscopic scale. The films were grown on Pd(111), Pt(111), and V2O3 (0001), supported on A l2O3 substrate. The local conductivity was measured by conductive atomic force microscopy mapping of C r2O3 surfaces, which revealed the nature of defects that formed conducting paths with the bottom Pd or Pt layer. A strong correlation was found between these electrical defects and the grain boundaries revealed in the corresponding topographic scans. In comparison, the C r2O3 film on V2O3 exhibited no leakage paths at similar tip bias value. Electrical resistance measurements through e-beam patterned top electrodes confirmed the resistivity mismatch between the films grown on different electrodes. The x-ray analysis attributes this difference to the twin free C r2O3 growth on V2O3 seeding.

  9. The Luminescent Properties and Atomic Structures of As-Grown and Annealed Nanostructured Silicon Rich Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    N. D. Espinosa-Torres

    2016-01-01

    Full Text Available Not long ago, we developed a theoretical model to describe a set of chemical reactions that can potentially occur during the process of obtaining Silicon Rich Oxide (SRO films, an off stoichiometry material, notwithstanding the technique used to grow such films. In order to elucidate the physical chemistry properties of such material, we suggested the chemical reactions that occur during the process of growing of SRO films in particular for the case of the Low Pressure Chemical Vapor Deposition (LPCVD technique in the aforementioned model. The present paper represents a step further with respect to the previous (published work, since it is dedicated to the calculation by Density Functional Theory (DFT of the optical and electronic properties of the as-grown and annealed SRO structures theoretically predicted on the basis of the previous work. In this work, we suggest and evaluate either some types of molecules or resulting nanostructures and we predict theoretically, by applying the DFT, the contribution that they may have to the phenomenon of luminescence (PL, which is experimentally measured in SRO films. We evaluated the optical and electronic properties of both the as-grown and the annealed structures.

  10. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  11. Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

    KAUST Repository

    Xing, G. Z.

    2014-05-23

    We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

  12. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  13. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  14. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    International Nuclear Information System (INIS)

    Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

    2016-01-01

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y 3 Fe 5 O 12 (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films

  15. Photo- and Electrochromic Properties of Activated Reactive Evaporated MoO3 Thin Films Grown on Flexible Substrates

    Directory of Open Access Journals (Sweden)

    K. Hari Krishna

    2008-01-01

    Full Text Available The molybdenum trioxide (MoO3 thin films were grown onto ITO-coated flexible Kapton substrates using plasma assisted activated reactive evaporation technique. The film depositions were carried out at constant glow power and oxygen partial pressures of 8 W and 1×10−3 Torr, respectively. The influence of substrate temperature on the microstructural and optical properties was investigated. The MoO3 thin films prepared at a substrate temperature of 523 K were found to be composed of uniformly distributed nanosized grains with an orthorhombic structure of α-MoO3. These nanocrystalline MoO3 thin films exhibited higher optical transmittance of about 80% in the visible region with an evaluated optical band gap of 3.29 eV. With the insertion of 12.5 mC/cm2, the films exhibited an optical modulation of 40% in the visible region with coloration efficiency of 22 cm2/C at the wavelength of 550 nm. The MoO3 films deposited at 523 K demonstrated better photochromic properties and showed highest color center concentration for the irradiation time of 30 minutes at 100 mW/cm2.

  16. Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Maheshwar Shrestha

    2018-03-01

    Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

  17. SnO{sub 2} thin films grown by atomic layer deposition using a novel Sn precursor

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Min-Jung [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Cho, Cheol Jin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744 (Korea, Republic of); Kim, Kwang-Chon; Pyeon, Jung Joon [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Kim, Hyo-Suk; Han, Jeong Hwan; Kim, Chang Gyoun; Chung, Taek-Mo [Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 305-600 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Engineering, Hanyang University, Ansan, 426-791 (Korea, Republic of); Kwon, Beomjin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Jeong, Doo Seok; Baek, Seung-Hyub [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of); Kang, Chong-Yun; Kim, Jin-Sang [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Kim, Seong Keun, E-mail: s.k.kim@kist.re.kr [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

    2014-11-30

    Highlights: • We developed a new ALD process for SnO{sub 2} films using dimethylamino-2-methyl-2-propoxy-tin(II) as a novel Sn precursor. • The SnO{sub 2} films grown from Sn(dmamp){sub 2} has negligible impurity contents. • Sn ions in the films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. - Abstract: SnO{sub 2} thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp){sub 2}) and O{sub 3} in a temperature range of 100–230 °C. The ALD window was found to be in the range of 100–200 °C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230 °C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp){sub 2} precursor. The SnO{sub 2} films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. The concentration of carbon and nitrogen in the all SnO{sub 2} films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO{sub 2} films with respect to the growth temperature. The ALD process with Sn(dmamp){sub 2} and O{sub 3} shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp){sub 2} and O{sub 3} is promising for growth of robust and highly pure SnO{sub 2} films.

  18. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  19. Photoluminescence of nanocrystalline ZnS thin film grown by sol-gel method.

    Science.gov (United States)

    Anila, E I; Safeera, T A; Reshmi, R

    2015-03-01

    Nano and polycrystalline ZnS thin films play a crucial role in photovoltaic technology and optoelectronic devices. In this work, we report the photoluminescence (PL) characterization of nanocrystalline ZnS thin films synthesized by dip coating method. The PL spectra exhibit broad nature with multiple emission peaks which are due to the different defect levels in the prepared film.

  20. Optical properties and structure of HfO{sub 2} thin films grown by high pressure reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    MartInez, F L [Departamento de Electronica y TecnologIa de Computadoras, Universidad Politecnica de Cartagena, Campus Universitario Muralla del Mar, E-30202 Cartagena (Spain); Toledano-Luque, M [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain); GandIa, J J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Carabe, J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Bohne, W [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Roehrich, J [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Strub, E [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Martil, I [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain)

    2007-09-07

    Thin films of hafnium oxide (HfO{sub 2}) have been grown by high pressure reactive sputtering on transparent quartz substrates (UV-grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous films. Optical properties of the films deposited on the silica substrates were investigated by transmittance and reflectance spectroscopy in the ultraviolet, visible and near infrared range. A numerical analysis method that takes into account the different surface roughness of the polycrystalline and amorphous films was applied to calculate the optical constants (refractive index and absorption coefficient). Amorphous films were found to have a higher refractive index and a lower transparency than polycrystalline films. This is attributed to a higher density of the amorphous samples, which was confirmed by atomic density measurements performed by heavy-ion elastic recoil detection analysis. The absorption coefficient gave an excellent fit to the Tauc law (indirect gap), which allowed a band gap value of 5.54 eV to be obtained. The structure of the films (amorphous or polycrystalline) was found to have no significant influence on the nature of the band gap. The Tauc plots also give information about the structure of the films, because the slope of the plot (the Tauc parameter) is related to the degree of order in the bond network. The amorphous samples had a larger value of the Tauc parameter, i.e. more order than the polycrystalline samples. This is indicative of a uniform bond network with percolation of the bond chains, in contrast to the randomly oriented polycrystalline grains separated by grain boundaries.

  1. Temperature dependent electrical properties of polyaniline film grown on paper through aniline vapor polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Deb, K.; Bera, A.; Saha, B., E-mail: biswajit.physics@gmail.com [Department of Physics, National Institute of Technology Agartala, Jirania, West Tripura 799046 (India); Bhowmik, K. L. [Department of Physics, National Institute of Technology Agartala, Jirania, West Tripura 799046 (India); Department of Chemistry, Bir Bikram Memorial College, Agartala, West Tripura 799004 (India); Chattopadhyay, K. K. [Department of Physics, Jadavpur University, Kolkata 700 032 (India)

    2016-05-23

    Polyaniline thin film has been prepared on paper by aniline vapor deposition technique. Ferric chloride has been used as polymerizing agent in this approach. The prepared films were studied through electrical resistivity and optical properties measurements. The electrical resistivity of the polyaniline film shows significant temperature dependence. The resistance sharply falls with the increase in temperature. The optical absorbance measurements shows characteristics absorbance peak indicating the formation of conducting emeraldine salt form of polyaniline. The optical energy band gap of the film was calculated from the transmittance spectra. The optical energy band gap and electrical conductivity of the polyaniline film is well suited for their applications in electronic devices.

  2. Nitrogen lattice location in MOVPE grown Ga1-xInxNyAs1-y films using ion beam channeling

    International Nuclear Information System (INIS)

    Nebiki, Takuya; Narusawa, Tadashi; Kumagai, Akiko; Doi, Hideyuki; Saito, Tadashi; Takagishi, Shigenori

    2006-01-01

    We have investigated the nitrogen lattice location in MOVPE grown Ga 1-x In x N y As 1-y with x=0.07 and y=0.025 by means of ion beam channeling technique. In this system, the lattice constant of the Ga 1-x In x N y As 1-y film is equal to GaAs lattice. Therefore, we can grow apparently no strain, high quality and very thick GaInNAs film on GaAs substrate. The quality of the films as well as the lattice location of In and N were characterized by channeling Rutherford backscattering spectrometry and nuclear reaction analysis using 3.95 MeV He 2+ beam. The fraction of substitutional nitrogen in the film was measured using the 14 N(α,p) 17 O endothermic nuclear reaction. Our results indicate that more than 90% of In and N atoms are located the substitutional site, however, N atoms are slightly displaced by ∼0.2 A from the lattice site. We suggest that the GaInNAs film has a local strain or point defects around the N atoms. (author)

  3. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  4. Growth and optical properties of sol-gel ZnO thin films grown on R-plane sapphire substrates

    Science.gov (United States)

    Nam, Giwoong; Kim, Min Su; Lee, Jewon; Leem, Jae-Young; Lee, Sang-heon; Jung, Jae Hak; Kim, Jin Soo; Kim, Jong Su

    2013-04-01

    Zinc-oxide (ZnO) thin films were grown on R-plane sapphire substrates by using the sol-gel spincoating method. They were annealed at temperatures ranging from 600 to 800 °C. The effects of the annealing temperature on the properties of the ZnO thin films were investigated using scanning electron microscopy, X-ray diffraction, and photoluminescence. When the annealing temperature was increased to 700 °C, the grains of the ZnO thin films coalesced, their size increased, and the residual stress in the ZnO thin films was relaxed. In addition, the intensity of the deep-level emission peak caused by defects decreased, and the full width at half maximum of the near-bandedge emission peak decreased as the annealing temperature was increased to 700 °C. However, when the annealing temperature was increased further, degradation of the structural and the optical properties was observed. The reflective index of the ZnO thin films in the UV region increased as the annealing temperature was increased to 700 °C, and n in the visible region decreased with increasing wavelength. The extinction coefficient in the UV and the visible regions decreased as the annealing temperature was increased to 700 °C. However, inflection points in the reflective index and the extinction coefficient were observed with a further increase in the annealing temperature.

  5. Effects of Various Parameters on Structural and Optical Properties of CBD-Grown ZnS Thin Films: A Review

    Science.gov (United States)

    Sinha, Tarkeshwar; Lilhare, Devjyoti; Khare, Ayush

    2018-02-01

    Zinc sulfide (ZnS) thin films deposited by chemical bath deposition (CBD) technique have proved their capability in a wide area of applications including electroluminescent and display devices, solar cells, sensors, and field emitters. These semiconducting thin films have attracted a much attention from the scientific community for industrial and research purposes. In this article, we provide a comprehensive review on the effect of various parameters on various properties of CBD-grown ZnS films. In the first part, we discuss the historical background of ZnS, its basic properties, and the advantages of the CBD technique. Detailed discussions on the film growth, structural and optical properties of ZnS thin films affected by various parameters, such as bath temperature and concentration, deposition time, stirring speed, complexing agents, pH value, humidity in the environment, and annealing conditions, are also presented. In later sections, brief information about the recent studies and findings is also added to explore the scope of research work in this field.

  6. Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

    International Nuclear Information System (INIS)

    Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y.; Amin, N.

    2015-01-01

    In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O 2 (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O 2 into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O 2 content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O 2 at.% 21.10, while the values decreased with the further increase or decrease of O 2 content on the films; indicating that specific amount of donor like O 2 atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film

  7. Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y. [Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia); Amin, N. [Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia); Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi (Malaysia)

    2015-05-15

    In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

  8. Fractal features of CdTe thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

    2015-12-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  9. Fractal features of CdTe thin films grown by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

    2015-01-01

    Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

  10. High-resolution electron microscopy study of SiGeC thin films grown on Si(1 0 0) by laser-assisted techniques

    International Nuclear Information System (INIS)

    Lioutas, Ch.B.; Frangis, N.; Soumelidis, S.; Chiussi, S.; Lopez, E.; Leon, B.

    2006-01-01

    PLIE was used for rapid crystallisation of a-SiGeC films deposited by LCVD on Si(1 0 0) substrates. HRTEM study of thin films grown with several laser energies shows that the combination of the two laser techniques gives an almost completely crystallised alloy, even for the lowest laser fluence. Island formation is observed below a certain threshold of fluence (about 450 mJ/cm 2 ). In the case of the lowest energy (100 mJ/cm 2 ) the material was partially crystallised (with the crystalline material being the predominant state), to a nanocrystalline alloy with a considerable amount of epitaxialy grown grains and with grain sizes of several tens of nanometers. Above the threshold of 450 mJ/cm 2 a rather smooth thin film is grown. The crystallisation is almost complete and the alloy is grown in an almost perfect epitaxial way

  11. Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc

    Science.gov (United States)

    Özen, Soner; Pat, Suat; Korkmaz, Şadan

    2018-03-01

    Undoped and lead (Pb)-doped gallium nitride (GaN) thin films have been deposited by a thermionic vacuum arc (TVA) method. Glass and polyethylene terephthalate were selected as optically transparent substrates. The structural, optical, morphological, and electrical properties of the deposited thin films were investigated. These physical properties were interpreted by comparison with related analysis methods. The crystalline structure of the deposited GaN thin films was hexagonal wurtzite. The optical bandgap energy of the GaN and Pb-doped GaN thin films was found to be 3.45 eV and 3.47 eV, respectively. The surface properties of the deposited thin films were imaged using atomic force microscopy and field-emission scanning electron microscopy, revealing a nanostructured, homogeneous, and granular surface structure. These results confirm that the TVA method is an alternative layer deposition system for Pb-doped GaN thin films.

  12. Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

    Science.gov (United States)

    Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

    2017-11-01

    Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

  13. Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations

    Science.gov (United States)

    Boikov, Yu. A.; Serenkov, I. T.; Sakharov, V. I.; Claeson, T.

    2016-12-01

    Structure of 40-nm thick La0.67Ca0.33MnO3 (LCMO) films grown by laser evaporation on (001) and (110) LaAlO3 (LAO) substrates has been investigated using the methods of medium-energy ion scattering and X-ray diffraction. The grown manganite layers are under lateral biaxial compressive mechanical stresses. When (110)LAO wafers are used as the substrates, stresses relax to a great extent; the relaxation is accompanied by the formation of defects in a (3-4)-nm thick manganite-film interlayer adjacent to the LCMO-(110)LAO interface. When studying the structure of the grown layers, their electro- and magnetotransport parameters have been measured. The electroresistance of the LCMO films grown on the substrates of both types reached a maximum at temperature T M of about 250 K. At temperatures close to T M magnetoresistance of the LCMO/(110)LAO films exceeds that of the LCMO/(001)LAO films by 20-30%; however, the situation is inverse at low temperatures ( T < 150 K). At T < T M , the magnetotransport in the grown manganite films significantly depends on the spin ordering in ferromagnetic domains, which increase with a decrease in temperature.

  14. Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

    International Nuclear Information System (INIS)

    Wang, J. S.; Shen, J. L.; Chen, W. J.; Tsai, Y. H.; Wang, H. H.; Yang, C. S.; Chen, R. H.; Tsai, C. D.

    2011-01-01

    This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm 2 has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 deg. C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.

  15. Investigation on silicon alloying kinetics during lithiation by galvanostatic impedance spectroscopy

    Science.gov (United States)

    Ko, Younghoon; Hwang, Chihyun; Song, Hyun-Kon

    2016-05-01

    The parameters characterizing lithiation processes in silicon anodes of lithium ion batteries (LIBs) are compared between μm- and nm-sized silicon particles. Galvanostatic electrochemical impedance spectroscopy (GS-EIS) is used to investigate the silicon-lithium alloying reaction in a practical charging operation (galvanostatic lithiation). Effective kinetic parameters depending on lithiation C-rates are obtained along lithiation progress from a large body of impedance data. Nanosizing benefits of nanoparticles over micro-particles are confirmed such as lower polarization resistance (Rp) and thinner solid-electrolyte interphase layer (SEI layer) over the whole lithiation range. Based on the kinetic information obtained from the non-stationary conditions, a lithiation strategy consisting of multiple galvanostatic steps is designed to lithiate silicon anodes in a faster way. 75% of full capacity is lithiated by a galvanostatic sequence of 4C-2C-1C-0.5C within 20 min. However, only 43% and 21% are achieved by a single-rate galvanostatic lithiation at 1 C and 0.5 C, respectively.

  16. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  17. Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Roro, K.T.; Botha, J.R.; Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2008-07-01

    ZnO thin films have been grown on glass substrates by MOCVD. The effect of deposition conditions such as VI/II molar ratio, DEZn flow rate and total reactor pressure on the growth rate and electrical properties of the films was studied. It is found that the growth rate decreases with an increase in the VI/II molar ratio. This behaviour is ascribed to the competitive adsorption of reactant species on the growth surface. The growth rate increases with an increase in DEZn flow rate, as expected. It is shown that the carrier concentration is independent of the DEZn flow rate. An increase in the total reactor pressure yields a decrease in growth rate. This phenomenon is attributed to the depletion of the gas phase due to parasitic prereactions between zinc and oxygen species at high pressure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Microcrystalline GaN film grown on Si(1 0 0) and its application to MSM photodiode

    International Nuclear Information System (INIS)

    Hassan, Z.; Lee, Y.C.; Yam, F.K.; Abdullah, M.J.; Ibrahim, K.; Kordesch, M.E.

    2004-01-01

    The properties and application of gallium nitride (GaN) films grown on silicon at a low temperature (873 K) by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (MOCVD) were investigated. Structural analysis revealed microcrystalline structure (μc-GaN) with crystallite size of 167 nm for these smooth and transparent films. Ni/μc-GaN metal-semiconductor-metal (MSM) photodiode have been fabricated and analyzed by means of electrical characterization, using current-voltage (I-V) and capacitance-voltage (C-V) measurements to evaluate the Schottky contact parameters for the study of current transport mechanism of the MSM photodiode. The barrier height phi b determined from the C-V method is 0.734 eV

  19. Post deposition annealing of epitaxial Ce(1-x)Pr(x)O(2-δ) films grown on Si(111).

    Science.gov (United States)

    Wilkens, H; Spiess, W; Zoellner, M H; Niu, G; Schroeder, T; Wollschläger, J

    2015-04-21

    In this work the structural and morphological changes of Ce1-xPrxO2-δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealing temperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formation via a polycrystalline intermediate state is observed.

  20. Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

    2014-11-01

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)Ox thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al2O3 sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length ( l φ ∝ T - 3 / 4 ), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  1. Physical properties of lanthanum monosulfide thin films grown on (100) silicon substrates

    Science.gov (United States)

    Cahay, M.; Garre, K.; Wu, X.; Poitras, D.; Lockwood, D. J.; Fairchild, S.

    2006-06-01

    Thin films of lanthanum monosulfide (LaS) have been deposited on Si (100) substrates by pulsed laser deposition. The films are golden yellow in appearance with a mirrorlike surface morphology and a sheet resistance around 0.1 Ω/□, as measured using a four-probe measurement technique. The thin films are characterized by atomic force microscopy (AFM), x-ray diffraction (XRD) analysis, high resolution transmission electron microscopy (HRTEM), ellipsometry, and Raman spectroscopy. The root-mean-square variation of (1 μm thick) film surface roughness measured over a 1 μm2 area by AFM was found to be 1.74 nm. XRD analysis of fairly thick films (micrometer size) reveals the growth of the cubic rocksalt structure with a lattice constant of 5.863(7) A˚, which is close to the bulk LaS value. HRTEM images reveal that the films are comprised of nanocrystals separated by regions of amorphous material. Two beam bright field TEM images show that there is a strain contrast in the Si substrate right under the interface with the LaS film and penetrating into the Si substrate. This suggests that there is an initial epitaxial-like growth of the LaS film on the Si substrate that introduces a strain as a result of the 8% lattice mismatch between the film and substrate. Ellipsometry measurements of the LaS films are well characterized by a Drude-Lorentz model from which an electron concentration of about 2.52×1022 cm-3 and a mobility around 8.5 cm2/V s are derived. Typical crystalline LaS features were evident in Raman spectra of the films, but the spectra also revealed their disordered (polycrystalline) nature.

  2. Improvement of thermoelectric properties of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films grown on graphene substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Choi, Ji Woon; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kim, Jin-Sang [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

    2017-06-15

    A study of substrate effect on the thermoelectric (TE) properties of Bi{sub 2}Te{sub 3} (BT) and Sb{sub 2}Te{sub 3} (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO{sub 2}/Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Growth, luminescence and magnetic properties of GaN:Er semiconductor thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Dasari, K.; Wu, J.; Huhtinen, H.; Jadwisienczak, W. M.; Palai, R.

    2017-05-01

    We report on the growth, surface, luminescence and magnetic properties of 180 nm thick Er-doped GaN thin films grown by molecular beam epitaxy (MBE) on c-sapphire substrates with no buffer layer and with different Er concentrations. In situ reflection high-energy electron diffraction (RHEED) patterns revealed crystalline and uniform growth of the films. The x-ray diffraction (XRD) pattern showed c-axis-oriented growth. Atomic force microscopy (AFM) analysis showed enhancement of surface morphology and smoothness with increasing Er doping, which could be due to minimization of surface defects because of the gettering effect of the rare earth. Scanning area-dependent surface morphology analysis showed a power law dependence indicating the fractal nature of the surface, which is confirmed by the observation of a non-integer D (fractal dimension) value. X-ray photoluminescence spectroscopy (XPS) revealed the formation of a GaN:Er phase and ruled out the presence of Ga and Er metallic and native oxide phases. The semi-quantitative elemental composition of the films was determined using N 1s, Ga 2p3/2 and Er 4d photoemission lines. The Er concentration was estimated from the x-ray photoelectron spectra and found to be between 3.0 and 9.0 at.% (˜1021 atoms cm-3). Photoluminescence (PL) and cathodoluminescence (CL) studies showed visible emission and concentration quenching of Er3+ ions in agreement with reported results. Excitation of the Er3+ ion might be affected by charge trapping due to Er-doping-induced defect complexes. The magnetic measurements carried out by a superconducting quantum interference device (SQUID) showed a ferromagnetic-paramagnetic phase transition at low temperature, contrary to the reported room temperature ferromagnetism in metalorganic chemical vapor deposition (MOCVD)-grown GaN:Er thick films of 550 nm.

  4. Influence of Substrate-Film Reactions on YBCO Grown by Fluorine-Free MOD Route

    DEFF Research Database (Denmark)

    Zhao, Yue; Tang, Xiao; Wu, W.

    2017-01-01

    Recently, fluorine-free metal organic deposition routes (FF-MOD) for growth of YBCO superconducting films have attracted increased attentions. In this paper, a comparison study was performed on the YBCO-Ag superconducting thin films deposited on two types substrates, LaAlO3 and CSD-Ce0.9La0.1O2-y...

  5. Terahertz and M4PP conductivity mapping of large area CVD grown graphene films

    DEFF Research Database (Denmark)

    Buron, Jonas Christian Due; Petersen, Dirch Hjorth; Bøggild, Peter

    We demonstrate mapping of magnitude and variation of the electrical conductance of large area CVD graphene films by terahertz time-domain spectroscopy (THz-TDS) and micro four-point-probe (M4PP). Non-trivial correlations between results obtained with the two techniques are discussed in relation...... to electrical properties of the graphene films....

  6. High-Mobility Aligned Pentacene Films Grown by Zone-Casting

    DEFF Research Database (Denmark)

    Duffy, Claudia M.; Andreasen, Jens Wenzel; Breiby, Dag W.

    2008-01-01

    We investigate the growth and field-effect transistor performance of aligned pentacene thin films deposited by zone-casting from a solution of unsubstituted pentacene molecules in a chlorinated solvent. Polarized optical microscopy shows that solution processed pentacene films grow as large cryst...

  7. Wet chemically grown composite thin film for room temperature LPG sensor

    Science.gov (United States)

    Birajadar, Ravikiran; Desale, Dipalee; Shaikh, Shaheed; Mahajan, Sandip; Upadhye, Deepak; Ghule, Anil; Sharma, Ramphal

    2014-04-01

    We have synthesized thin film of zinc oxide-polyaniline (ZnO/PANI) composite using a simple wet chemical approach. As-synthesized ZnO/PANI composite thin film studied using different characterization techniques. The optical study reveals the penetration and interaction of PANI molecules with ZnO thin film. Prominent blue shift in UV-vis due to interaction between ZnO and PANI indicate presence of zinc oxide in polyaniline matrix. It is observed that ZnO thin film is not sensitive to LPG (liquefied petroleum gas) at room temperature. On the other hand ZnO/PANI composite thin film shows good response and recovery behaviors at room temperature.

  8. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    International Nuclear Information System (INIS)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al 2 O 3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al 2 O 3 . FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  9. Study of structural and optical properties of ZnO films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Lemlikchi, S.; Abdelli-Messaci, S.; Lafane, S.; Kerdja, T.; Guittoum, A.; Saad, M.

    2010-01-01

    Wurtzite zinc oxides films (ZnO) were deposited on silicon (0 0 1) and corning glass substrates using the pulsed laser deposition technique. The laser fluence, target-substrate distance, substrate temperature of 300 deg. C were fixed while varying oxygen pressures from 2 to 500 Pa were used. It is observed that the structural properties of ZnO films depend strongly on the oxygen pressure and the substrate nature. The film crystallinity improves with decreasing oxygen pressure. At high oxygen pressure, the films are randomly oriented, whereas, at low oxygen pressures they are well oriented along [0 0 1] axis for Si substrates and along [1 0 3] axis for glass substrates. A honeycomb structure is obtained at low oxygen pressures, whereas microcrystalline structures were obtained at high oxygen pressures. The effect of oxygen pressure on film transparency, band gap E g and Urbach energies was investigated.

  10. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  11. Effect of annealing on pulse laser deposition grown copper oxide thin film

    Science.gov (United States)

    Mistry, Vaibhavi H.; Mistry, Bhaumik V.; Modi, B. P.; Joshi, U. S.

    2017-05-01

    Cuprous oxide (Cu2O) is a promising non-toxic and low cost semiconductor with potential applications in photovoltaic devices and sensor applications. Copper oxide thin films were prepared on glass substrate by pulse laser deposition. The effects of annealing on the structural, optical and electrical properties of copper oxide thin films were studied. The films were annealed in air for different temperature ranging from 200 to 450 °C. X-ray diffraction patterns reveals that the films as-deposited and annealed at 200 and 250 °C are of cuprite structure with composition Cu2O. Annealing at 300 °C and above converts these films to CuO phase. The atomic force microscopy results show that both the phase has nanocrystalline and particle size of the films is increasing with increase in annealing temperature. The conversion from Cu2O to CuO phase was confirmed by a shift in the optical band gap from 2.20 eV to 1.74 eV. The annealing conditions play a major role in the structural properties of copper oxide thin films.

  12. Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

    Science.gov (United States)

    Singh, Shaivalini; Chakrabarti, P

    2012-03-01

    We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

  13. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  14. Nitrogen doping in atomic layer deposition grown titanium dioxide films by using ammonium hydroxide

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaeriaeinen, M.-L., E-mail: marja-leena.kaariainen@lut.fi; Cameron, D.C.

    2012-12-30

    Titanium dioxide films have been created by atomic layer deposition using titanium chloride as the metal source and a solution of ammonium hydroxide in water as oxidant. Ammonium hydroxide has been used as a source of nitrogen for doping and three thickness series have been deposited at 350 Degree-Sign C. A 15 nm anatase dominated film was found to possess the highest photocatalytic activity in all film series. Furthermore almost three times better photocatalytic activity was discovered in the doped series compared to undoped films. The doped films also had lower resistivity. The results from X-ray photoemission spectroscopy showed evidence for interstitial nitrogen in the titanium dioxide structure. Besides, there was a minor red shift observable in the thickest samples. In addition the film conductivity was discovered to increase with the feeding pressure of ammonium hydroxide in the oxidant precursor. This may indicate that nitrogen doping has caused the decrease in the resistivity and therefore has an impact as an enhanced photocatalytic activity. The hot probe test showed that all the anatase or anatase dominant films were p-type and all the rutile dominant films were n-type. The best photocatalytic activity was shown by anatase-dominant films containing a small amount of rutile. It may be that p-n-junctions are formed between p-type anatase and n-type rutile which cause carrier separation and slow down the recombination rate. The combination of nitrogen doping and p-n junction formation results in superior photocatalytic performance. - Highlights: Black-Right-Pointing-Pointer We found all N-doped and undoped anatase dominating films p-type. Black-Right-Pointing-Pointer We found all N-doped and undoped rutile dominating films n-type. Black-Right-Pointing-Pointer We propose that p-n junctions are formed in anatase-rutile mixture films. Black-Right-Pointing-Pointer We found that low level N-doping has increased TiO{sub 2} conductivity. Black

  15. Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

    Science.gov (United States)

    Kim, Kun HO; Bai, G.; Nicolet, MARC-A.; Mahan, John E.; Geib, Kent M.

    1991-01-01

    The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

  16. Bismuth onion thin film in situ grown on silicon wafer synthesized through a hydrothermal approach

    International Nuclear Information System (INIS)

    Zhao Yue; Liu Hong; Liu Jin; Hu Chenguo; Wang Jiyang

    2010-01-01

    Bismuth onion structured nanospheres with the same structure as carbon onions have been synthesized and observed. The nanospheres were synthesized through a hydrothermal method using bismuth hydroxide and silicon wafer as reactants. By controlling the heating temperature, heating time, and the pressure, nanoscale bismuth spheres can be in situ synthesized on silicon wafer, and forms a bismuth onion film on the substrate. The electronic property of the films was investigated. A formation mechanism of the formation of bismuth onions and the onion film has been proposed on the basis of experimental observations.

  17. Electron-diffraction and spectroscopical characterisation of ultrathin ZnS films grown by molecular beam epitaxy on GaP(0 0 1)

    International Nuclear Information System (INIS)

    Zhang, L.; Szargan, R.; Chasse, T.

    2004-01-01

    ZnS films were grown by molecular beam epitaxy employing a single compound effusion cell on GaP(0 0 1) substrate at different temperatures, and characterised by means of low energy electron diffraction, X-ray and ultra-violet photoelectron spectroscopy, angle-resolved ultra-violet photoelectron spectroscopy and X-ray emission spectroscopy. The GaP(0 0 1) substrate exhibits a (4x2) reconstruction after Ar ion sputtering and annealing at 370 deg. C. Crystal quality of the ZnS films depends on both film thickness and growth temperature. Thinner films grown at higher temperatures and thicker films grown at lower temperatures have better crystal quality. The layer-by-layer growth mode of the ZnS films at lower (25, 80 and 100 deg. C) temperatures changes to layer-by-layer-plus-island mode at higher temperatures (120, 150 and 180 deg. C). A chemical reaction takes place and is confined to the interface. The valence band offset of the ZnS-GaP heterojunction was determined to be 0.8±0.1 eV. Sulphur L 2,3 emission spectra of ZnS powder raw material and the epitaxial ZnS films display the same features, regardless of the existence of the Ga-S bonding in the film samples

  18. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  19. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

    KAUST Repository

    Zheng, Maxwell

    2015-08-25

    The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

  20. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    OpenAIRE

    Dangwal Pandey, A.; Krausert, Konstantin; Franz, D.; Grånäs, E.; Shayduk, R.; Müller, P.; Keller, Thomas F.; Noei, H.; Vonk, V.; Stierle, A.

    2016-01-01

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated system atically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force mic...

  1. Structural characterization and magnetic properties of L10-MnAl films grown on different underlayers by molecular beam epitaxy

    Science.gov (United States)

    Takata, Fumiya; Gushi, Toshiki; Anzai, Akihito; Toko, Kaoru; Suemasu, Takashi

    2018-03-01

    We grow MnAl films on different underlayers by molecular beam epitaxy (MBE), and investigate their structural and magnetic properties. L10-ordered MnAl films were successfully grown both on an MgO(0 0 1) single-crystalline substrate and on an Mn4N(0 0 1) buffer layer formed on MgO(0 0 1) and SrTiO3(0 0 1) substrates. For the MgO substrate, post rapid thermal annealing (RTA) drastically improved the crystalline quality and the degree of L10-ordering, whereas no improvement in the crystallinity was achieved by altering the substrate temperature (TS) during MBE growth. However, high-quality L10-MnAl films were formed on the Mn4N buffer layer by simply varying TS. Structural analysis using X-ray diffraction showed MnAl on an MgO substrate had a cubic structure whereas MnAl on the Mn4N buffer had a tetragonal structure. This difference in crystal structure affected the magnetic properties of the MnAl films. The uniaxial magnetic anisotropy constant (Ku) was drastically improved by inserting an Mn4N buffer layer. We achieved a perpendicular magnetic anisotropy of Ku = 5.0 ± 0.7 Merg/cm3 for MnAl/Mn4N film on MgO and 6.0 ± 0.2 Merg/cm3 on STO. These results suggest that Mn4N has potential as an underlayer for L10-MnAl.

  2. Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

    International Nuclear Information System (INIS)

    Majee, S.; Cerqueira, M.F.; Tondelier, D.; Vanel, J.C.; Geffroy, B.; Bonnassieux, Y.; Alpuim, P.; Bourée, J.E.

    2015-01-01

    In this work SiN x thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiN x multilayers stacked and stacks of SiN x single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10 −3 g/m 2 day) for stacked SiN x single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiN x single-layers without Ar plasma treatment. - Highlights: • SiN x films are grown using HW-CVD to be used as permeation barrier layer. • Ar plasma treatment is made between two successive SiN x films. • Electrical calcium degradation test is used to evaluate the WVTR values. • Lowest WVTR value of ~ 7 × 10 -3 g/m 2 .day is reported

  3. Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

    Directory of Open Access Journals (Sweden)

    Bogdanowicz Robert

    2014-12-01

    Full Text Available Abstract A conductive boron-doped diamond (BDD grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD. The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm-1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

  4. Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

    International Nuclear Information System (INIS)

    Jeong, Jin-A; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

    2010-01-01

    We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/□ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

  5. Cr2O3 thin films grown at room temperature by low pressure laser chemical vapour deposition

    International Nuclear Information System (INIS)

    Sousa, P.M.; Silvestre, A.J.; Conde, O.

    2011-01-01

    Chromia (Cr 2 O 3 ) has been extensively explored for the purpose of developing widespread industrial applications, owing to the convergence of a variety of mechanical, physical and chemical properties in one single oxide material. Various methods have been used for large area synthesis of Cr 2 O 3 films. However, for selective area growth and growth on thermally sensitive materials, laser-assisted chemical vapour deposition (LCVD) can be applied advantageously. Here we report on the growth of single layers of pure Cr 2 O 3 onto sapphire substrates at room temperature by low pressure photolytic LCVD, using UV laser radiation and Cr(CO) 6 as chromium precursor. The feasibility of the LCVD technique to access selective area deposition of chromia thin films is demonstrated. Best results were obtained for a laser fluence of 120 mJ cm -2 and a partial pressure ratio of O 2 to Cr(CO) 6 of 1.0. Samples grown with these experimental parameters are polycrystalline and their microstructure is characterised by a high density of particles whose size follows a lognormal distribution. Deposition rates of 0.1 nm s -1 and mean particle sizes of 1.85 μm were measured for these films.

  6. Zn{sub x}Zr{sub y}O{sub z} thin films grown by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, O. [Instituto de Ciencia de Materiales de Madrid (CSIC), Madrid (Spain); Hernandez-Velez, M. [Departamento de Fisica Aplicada, Universidad Autonoma de Madrid (Spain)

    2017-10-15

    The structural and optical properties of thin films deposited by DC reactive magnetron co-sputtering using Zn and Zr targets in argon and oxygen gas mixtures at room temperature are reported. The power applied to the Zr cathode was kept constant, while that applied to the Zn cathode was varied between 0 and 150 W to produce very different Zn{sub x}Zr{sub y}O{sub z} ternary compounds with Zn/Zr atomic ratios in the range of 0.1-10. The composition, crystalline structure, and optical properties of the samples were determined by EDX, XRD, FTIR, and UV-visible spectroscopies. The grown films are polycrystalline, and the preferred crystallographic orientation depends on the Zn atomic concentration in the film. The optical transmission in the UV-visible range is approximately 80% in all cases, and as the Zn atomic content increases, the absorption edge shifts to longer wavelengths. The optical band gap, E{sub g}, shifted from 5.5 to 3.5 eV when the Zn/Zr atomic ratio was increased. The results indicate the potential use of these materials in optoelectronic applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

    International Nuclear Information System (INIS)

    Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

    2005-01-01

    The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

  8. Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.; Noei, H.; Vonk, V. [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Krausert, K.; Franz, D.; Müller, P.; Keller, T. F.; Stierle, A., E-mail: andreas.stierle@desy.de [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Fachbereich Physik, Universität Hamburg, D-22607 Hamburg (Germany)

    2016-08-21

    Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

  9. Investigation of mechanical properties of CVD grown titanium silicon nitride thin films under reduced atmosphere

    Science.gov (United States)

    Guha, Spandan; Das, Soham; Bandyopadhyay, Asish; Das, Santanu; Swain, Bibhu P.

    2018-01-01

    Titanium silicon nitride (TiSiN) thin films were deposited by thermal chemical vapour deposition using TiO2 + Si3N4 powder with different H2 flow rates. Morphological, structural, and mechanical properties of deposited TiSiN films were characterized using different techniques by SEM, XRD, Raman, and nano-indentation. SEM images reveal that surface roughness of TiSiN thin films decreased with increasing of H2 flow rate. The Raman spectroscopy indicated that the intensity of acoustic phonon mode decreases, whereas intensity of optical phonon mode increases with increasing of H2 flow rate. The maximum hardness, Young's modulus, and yield strength of the TiSiN films are 18.23, 185.26, and 83.2 GPa, respectively. The crystallite size and lattice strain of TiSiN thin films vary 2.08-4.43 nm and 0.02-0.055, respectively, for different H2 flow rates. The quantitative and qualitative analyses of TiSiN thin were carried out using the Origin 9.0 software.

  10. Intermediate phase evolution in YBCO thin films grown by the TFA process

    International Nuclear Information System (INIS)

    Zalamova, K; Pomar, A; Palau, A; Puig, T; Obradors, X

    2010-01-01

    The YBCO thin film growth process from TFA precursors involves a complex reaction path which includes several oxide, fluoride and oxyfluoride intermediate phases, and the final microstructure and properties of the films are strongly influenced by the morphological and chemical evolution of these intermediate phases. In this work we present a study of the evolution of the intermediate phases involved in the TFA YBCO growth process under normal pressure conditions and we show that the oxygen partial pressure during pyrolysis of the TFA precursors is an important parameter. The Cu phase after the TFA pyrolysis can be either CuO, Cu 2 O or a mixture of both as the oxygen partial pressure is modified. The kinetics evolution of the intermediate phases has been determined for films pyrolysed in oxygen and nitrogen atmospheres and it is concluded that non-equilibrium phase transformations influence the reaction path towards epitaxial YBCO films and its microstructure. The intermediate phase evolution in these two series of films is summarized in kinetic phase diagrams.

  11. Electrochromism in surface modified crystalline WO3 thin films grown by reactive DC magnetron sputtering

    Science.gov (United States)

    Karuppasamy, A.

    2013-10-01

    In the present work, tungsten oxide thin films were deposited at various oxygen chamber pressures (1.0-5.0 × 10-3 mbar) by maintaining the sputtering power density and argon pressure constant at 3.0 W/cm2 and 1.2 × 10-2 mbar, respectively. The role of surface morphology and porosity on the electrochromic properties of crystalline tungsten oxide thin films has been investigated. XRD and Raman studies reveal that all the samples post annealed at 450 ̊C in air for 3.0 h settle in monoclinic crystal system of tungsten oxide (W18O49). Though the phase of material is indifferent to oxygen pressure variations (PO2), morphology and film density shows a striking dependence on PO2. A systematic study on plasma (OES), morphology, optical and electrochromic properties of crystalline tungsten oxide reveal that the films deposited at PO2 of 2.0 × 10-3 mbar exhibit better coloration efficiency (58 cm2/C), electron/ion capacity (Qc: -25 mC/cm2), and reversibility (92%). This is attributed to the enhanced surface properties like high density of pores and fine particulates (100 nm) and to lesser bulk density of the film (ρ/ρo = 0.84) which facilitates the process of intercalation/de-intercalation of protons and electrons. These results show good promise toward stable and efficient crystalline tungsten oxide based electrochromic device applications.

  12. Galvanostatic response of AA2024 aluminium alloy in 3.5% NaCl ...

    Indian Academy of Sciences (India)

    Galvanostatic responses of AA2024T3 alloy in de-aerated and naturally aerated 3.5% NaCl solution have been investigated. In the de-aerated condition, two distinct stages of polarization were revealed. From the first stage, the relationships between the pitting incubation time, pitting potential and applied current density for ...

  13. Galvanostatic Electrodeposition of Ni-Co Alloys in DMSO under a ...

    African Journals Online (AJOL)

    This paper focuses on the galvanostatic magneto-electrodeposition of Ni-Co alloys in dimethyl sulphoxide (DMSO) in the presence and absence of a permanent parallel magnetic field (PPMF) to the cathode surface. It was found that the mass deposition was enhanced in the presence of PPMF(9 T) compared with the ...

  14. Galvanostatic response of AA2024 aluminium alloy in 3.5% NaCl ...

    Indian Academy of Sciences (India)

    s12034-016-1301-0. Galvanostatic response of AA2024 aluminium alloy in 3.5% NaCl solution. U DONATUS. ∗ and G E THOMPSON. Corrosion and Protection Centre, School of Materials, The University of Manchester, Manchester M13 9PL, UK.

  15. Galvanostatic response of AA2024 aluminium alloy in 3.5% NaCl ...

    Indian Academy of Sciences (India)

    Abstract. Galvanostatic responses of AA2024T3 alloy in de-aerated and naturally aerated 3.5% NaCl solution have been investigated. In the de-aerated condition, two distinct stages of polarization were revealed. From the first stage, the relationships between the pitting incubation time, pitting potential and applied current ...

  16. Annealing effects on photoluminescence of SiNx films grown by PECVD

    International Nuclear Information System (INIS)

    Komarov, F.F.; Parkhomenko, I.N.; Vlasukova, L.A.; Milchanin, O.V.; Togambayeva, A.K.; Kovalchuk, N.S.

    2013-01-01

    Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasma-enhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Si-rich and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N 2 ambient has been revealed by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed. The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiN x has been discussed. (authors)

  17. InAs film grown on Si(111) by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

    2008-01-01

    We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

  18. Characteristics of CuInSe2 thin films grown by the selenization method

    International Nuclear Information System (INIS)

    Kim, Sang Deok; Kim, Hyeong Joon; Adurodija, Frederick Ojo; Yoon, Kyeong Hoon; Song, Jin Soo

    1999-01-01

    CuInSe 2 thin films were formed from a selenization of co-sputtered Cu-In alloy layers which consisted of only two phases, CuIn 2 and Cu 11 In 9 . A linear dependence of the Cu-In alloy film composition on the Cu/In sputtering power was found. The metallic layers were selenized in vacuum or at 1 atm. A small number of Cu-Se and In-Se compounds was observed during the early stage of selenization, and single-phase CuInSe 2 was more easily formed in vacuum than at atmospheric pressure. Therefore, CuInSe 2 films selenized in vacuum showed larger grain sizes, smoother surfaces, and denser microstructures than those selenized at 1 atm

  19. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    KAUST Repository

    Sarath Kumar, S. R.

    2012-02-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  20. Characteristics of CuInSe sub 2 thin films grown by the selenization method

    CERN Document Server

    Kim, S D; Adurodija, F O; Yoon, K H; Song, J S

    1999-01-01

    CuInSe sub 2 thin films were formed from a selenization of co-sputtered Cu-In alloy layers which consisted of only two phases, CuIn sub 2 and Cu sub 1 sub 1 In sub 9. A linear dependence of the Cu-In alloy film composition on the Cu/In sputtering power was found. The metallic layers were selenized in vacuum or at 1 atm. A small number of Cu-Se and In-Se compounds was observed during the early stage of selenization, and single-phase CuInSe sub 2 was more easily formed in vacuum than at atmospheric pressure. Therefore, CuInSe sub 2 films selenized in vacuum showed larger grain sizes, smoother surfaces, and denser microstructures than those selenized at 1 atm.

  1. Fluence dependent electrical conductivity in aluminium thin films grown by infrared pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain); Martínez-Tong, Daniel E. [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006 Madrid (Spain); Sanz, Mikel; Oujja, Mohamed; Marco, José F. [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain); Ezquerra, Tiberio A. [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006 Madrid (Spain); Castillejo, Marta [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain)

    2016-11-30

    Highlights: • IR pulsed laser ablation of aluminium gives rise to smooth layers of several tens of nanometers. • Irradiation at fluences around 2.7 J/cm{sup 2} and above 7 J/cm{sup 2} resulted in deposition of amorphous aluminium oxide films and metallic aluminium films respectively. • Highly ionized species are more abundant in the ablation plumes generated at higher fluences. • It is possible to control by PLD the metal or dielectric character of the films. - Abstract: We studied the effect of laser fluence on the morphology, composition, structure and electric conductivity of deposits generated by pulsed laser ablation of a metallic aluminium target in vacuum using a Q-switched Nd:YAG laser (1064 nm, 15 ns). Upon irradiation for one hour at a repetition rate of 10 Hz, a smooth layer of several tens of nanometres, as revealed by atomic force microscopy (AFM) was deposited on glass. Surface chemical composition was determined by X-ray photoelectron spectroscopy, and to study the conductivity of deposits both I–V curves and conductive-AFM measurements were performed. Irradiation at fluences around 2.7 J/cm{sup 2} resulted in deposition of amorphous aluminium oxide films. Differently, at higher fluences above 7 J/cm{sup 2}, the films are constituted by metallic aluminium. Optical emission spectroscopy revealed that highly ionized species are more abundant in the ablation plumes generated at higher fluences. The results demonstrate the possibility to control by PLD the metal or dielectric character of the films.

  2. Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Han, W.G. [Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Kang, S.G. [Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Kim, T.W. [Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)]. E-mail: twk@hanyang.ac.kr; Kim, D.W. [Semiconductor Materials Laboratory, Nano-Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of); Cho, W.J. [Semiconductor Materials Laboratory, Nano-Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of)

    2005-05-30

    The effects of annealing on the optical and the electronics properties of ZnO thin films grown on p-Si(1 0 0) substrates by using radio frequency magnetron sputtering were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements. The XRD patterns and pole figures showed that the crystallinity of the ZnO films grown on p-Si(1 0 0) substrates was improved by thermal treatment. XRD patterns, pole figures, and TEM images showed that the as-grown and the annealed ZnO films grown on Si(1 0 0) substrates had a c-axis preferential orientation in the [0 0 0 1] crystal direction. The PL spectra showed that luminescence peaks related to the free excitons and the deep levels appeared after annealing. The XPS spectra showed that the peak positions corresponding to the O 1s and the Zn 2p shifted slightly after thermal treatment. These results can help improve understanding of thermal effects on the optical and the electronic properties of ZnO thin films grown on p-Si(1 0 0) substrates.

  3. Structural, electrical, and optical properties of polycrystalline NbO{sub 2} thin films grown on glass substrates by solid phase crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), Kawasaki (Japan); Kamisaka, Hideyuki [Department of Chemistry, The University of Tokyo (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), Kawasaki (Japan); Department of Chemistry, The University of Tokyo (Japan)

    2017-03-15

    We investigated the structural, electrical, and optical properties of polycrystalline NbO{sub 2} thin films on glass substrates. The NbO{sub 2} films were crystallized from amorphous precursor films grown by pulsed laser deposition at various oxygen partial pressures (P{sub O2}). The electrical and optical properties of the precursor films systematically changed with P{sub O2}, demonstrating that the oxygen content of the precursor films can be finely controlled with P{sub O2}. The precursors were crystallized into polycrystalline NbO{sub 2} films by annealing under vacuum at 600 C. The NbO{sub 2} films possessed extremely flat surfaces with branching patterns. Even optimized films showed a low resistivity (ρ) of 2 x 10{sup 2} Ω cm, which is much lower than the bulk value of 1 x 10{sup 4} Ω cm, probably because of the inferior crystallinity of the films compared with that of a bulk NbO{sub 2} crystal. Both oxygen-rich and -poor NbO{sub 2} films showed lower ρ than that of the stoichiometric film. The NbO{sub 2} film with the highest ρ showed an indirect bandgap of 0.7 eV. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable ...

  5. Influence of interface reactions on the YBCO films grown by fluorine-free solution route

    DEFF Research Database (Denmark)

    Zhao, Yue; Wu, Wei; Tang, Xiao

    2015-01-01

    Fabrication of full-stacked coated conductors by all-chemical-solution routes exhibit a great potential in view of further reducing the cost and increasing the throughput for industrialization. Growth of YBa2Cu3O7−x (YBCO) superconducting films by fluorine-free metal organic deposition routes (FF...

  6. Effect of pulse biasing on the morphology of diamond films grown by hot filament CVD

    International Nuclear Information System (INIS)

    Beake, B.D.; Hussain, I.U.; Rego, C.; Ahmed, W.

    1999-01-01

    There has been considerable interest in the chemical vapour deposition (CVD) of diamond due to its unique mechanical, optical and electronic properties, which make it useful for many applications. For use in optical and electronic applications further developments in the CVD process are required to control the surface morphology and crystal size of the diamond films. These will require a detailed understanding of both the nucleation and growth processes that effect the properties. The technique of bias enhanced nucleation (BEN) of diamond offers better reproducibility than conventional pre-treatment methods such as mechanical abrasion. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used study the surface modification of diamond films on silicon substrates during pulse biased growth in a hot filament CVD reactor. Pre-abraded silicon substrates were subjected to a three-step sequential growth process: (i) diamond deposition under standard CVD conditions, (ii) bias pre-treatment and (iii) deposition under standard conditions. The results show that the bias pre-treatment time is a critical parameter controlling the surface morphology and roughness of the diamond films deposited. Biasing reduces the surface roughness from 152 nm for standard CVD diamond to 68 nm for the 2.5 minutes pulse biased film. Further increase in the bias time results in an increase in surface roughness and crystallite size. (author)

  7. Structural changes induced spin-reorientation of ultrathin Mn films grown on Ag(001)

    International Nuclear Information System (INIS)

    Ouarab, N.; Haroun, A.; Baadji, N.

    2016-01-01

    The strained body centered tetragonal (bct) Mn ultrathin film from lattice parameter a=2.89 Å to lattice value of 2.73 Å induces anti-ferromagnetic behavior between Mn layers. The magnetic easy axis of Mn film was demonstrated theoretically to switch from the in-plane to out-of-plane by magneto-optical Kerr effect investigation. By including spin–orbit coupling in full potential linearized augmented plane waves and linearized muffin-tin orbitals methods, manganese ultrathin film displays different magnetic behaviors and the spin-reorientation transition is shown to be correlated to these structural changes. The calculated magnetic moment of manganese planes are enhanced and reach a value of ~4.02 μ B . The polar magneto-optical Kerr effect is calculated for a photon energy range extended to 15 eV. It shows a pronounced peak in visible light. - Highlights: • The applied strain in Mn-bct structure induces anti-ferromagnetic behavior. • The easy magnetization axis is demonstrated to be out-of-plane. • The magnetic moment of Mn-layers are enhanced and reach a value of ~4.02 μ B . • Kerr spectra show significant polar responses for Mn films in the visible range. • The prominent structures in the Kerr spectra have been identified.

  8. Positron beam and RBS studies of thermally grown oxide films on stainless steel grade 304

    Science.gov (United States)

    Horodek, P.; Siemek, K.; Kobets, A. G.; Kulik, M.; Meshkov, I. N.

    2015-04-01

    The formation of oxide films on surfaces of stainless steel 304 AISI annealed at 800 °C in vacuum, air and in flow N2 atmospheres was studied using variable energy positron beam technique (VEP) and Rutherford backscattering/nuclear reaction (RBS/NR) methods. In frame of these studies, Doppler broadening of annihilation line (DB) measurements were performed. For a sample heated in vacuum the oxide film ca. 8 nm is observed. For specimens oxidized in air and N2 the multi-layered oxide films of about a few hundred nanometers are recognized. The RBS/NR measurements have shown that the sample annealed in vacuum contains a lower quantity of oxygen while for samples heated in the air and N2 non-linear and rather linear time-dependency are observed, respectively. The thicknesses of total oxide films obtained from RBS/NR tests are in good agreement with the VEP results. Time evolution of the oxide growing was studied as well.

  9. Carrier transport in polycrystalline silicon thin films solar cells grown on a highly textured structure

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Takakura, H.; Hamakawa, Y.; Muhida, R.; Kawamura, T.; Harano, T.; Toyama, T.; Okamoto, H.

    2004-01-01

    Roč. 43, 9A (2004), s. 5955-5959 ISSN 0021-4922 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon thin film * solar cells * substrate texture Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.142, year: 2004

  10. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    Administrator

    ties were measured using four-probe Hall measurement set-up in Van der Pauw geometry with a magnetic field of. 0⋅50 Tesla. 3. Results and discussion. 3.1 Structural properties. Figure 1(a) demonstrated the variation of XRD spectra from ZnO films for different annealing temperatures. It should be mentioned at this point ...

  11. Thermally induced evolution of sol–gel grown WO3 films on ITO/glass substrates

    NARCIS (Netherlands)

    Caruso, T.; Castriota, M.; Policicchio, A.; Fasanella, A.; Santo, M.P. De; Ciuchi, F.; Desiderio, G.; Rosa, S. La; Rudolf, P.; Agostino, R.G.; Cazzanelli, E.

    2014-01-01

    The electronic, morphological and structural properties of WO3 thin films, synthesized via a sol-gel route and deposited on ITO/glass substrates by spin-coating, were analyzed as a function of annealing temperature (100-700 degrees C range) by Scanning Electron Microscopy, Atomic Force Microscopy,

  12. Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching

    Energy Technology Data Exchange (ETDEWEB)

    Correa, Diogo S. [Universidade Federal de Pelotas (UFPel), RS (Brazil). Centro de Ciencias Quimicas, Farmaceuticas e de Alimentos; Pazinato, Julia C.O.; Freitas, Mauricio A. de; Radtke, Claudio; Garcia, Irene T.S., E-mail: irene@iq.ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil). Instituto de Quimica; Dorneles, Lucio S. [Universidade Federal de Santa Maria (UFSM), RS (Brazil). Centro de Ciencias Naturais e Exatas

    2014-05-15

    Tungsten oxides show different stoichiometries, crystal lattices and morphologies. These characteristics are important mainly when they are used as photocatalysts. In this work tungsten oxide thin films were obtained by thermal evaporation on (100) silicon substrates covered with gold and heated at 350 and 600 °C, with different deposition times. The stoichiometry of the films, morphology, crystal structure and resistance to leaching were characterized through X-ray photoelectron spectroscopy, micro-Raman spectroscopy, scanning and transmission electron microscopy, X-ray diffractometry, Rutherford backscattering spectrometry and O{sup 16} (α,α')O{sup 16} resonant nuclear reaction. Films obtained at higher temperatures show well-defined spherical nanometric structure; they are composed of WO{sub 3.1} and the presence of hydrated tungsten oxide was also observed. The major crystal structure observed is the hexagonal. Thin films obtained through thermal evaporation present resistance to leaching in aqueous media and excellent performance as photocatalysts, evaluated through the degradation of the methyl orange dye. (author)

  13. Preparation and characterization of LaNiO3 films grown by metal ...

    Indian Academy of Sciences (India)

    Administrator

    Xi'an 710062, P.R. China; School of Chemistry and Chemical Engineering, Shaanxi Normal University, ... (h00) orientation depends on pyrolysis temperature, annealing temperature and thickness of LaNiO3 layers. The LaNiO3 films prepared under optimal condition indicate highly (h00) orientation and a rather smooth.

  14. Preparation and characterization of LaNiO3 films grown by metal ...

    Indian Academy of Sciences (India)

    The LaNiO3 films prepared under optimal condition indicate highly (ℎ00) orientation and a rather smooth surface. ... Key Laboratory of Applied Surface and Colloid Chemistry (Shaanxi Normal University), Ministry of Education, Xi'an 710062, P.R. China; School of Chemistry and Chemical Engineering, Shaanxi Normal ...

  15. Structural transformations in MoO{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E. [Departamento de Fisica, Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, 09340, Mexico D. F. (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, 11801, Mexico D. F. (Mexico)

    2004-01-01

    In this work, laser-induced crystallization in MoO{sub x} thin films (1.8{<=}x{<=}2.1) is reported. This transformation involves a MoO{sub x} oxidation and subsequently a crystallization process from amorphous MoO{sub 3} to crystalline {alpha}MoO{sub 3}. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO{sub x} to the thermodynamically stable {alpha}MoO{sub 3} crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO{sub x} to a mixture of {alpha}MoO{sub 3} and the thermodynamically unstable {beta}MoO{sub 3} crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  16. Structural changes induced spin-reorientation of ultrathin Mn films grown on Ag(001)

    Energy Technology Data Exchange (ETDEWEB)

    Ouarab, N., E-mail: ouarab_nourdine@yahoo.fr [Quantum Physics and Dynamical Systems Laboratory, Ferhat Abbas University of Sétif (Algeria); Semiconductor Technology Research Center for Energetic-(CRTSE), 02, Bd Frantz Fanon Algiers, BP N° 140 (Algeria); Haroun, A. [Quantum Physics and Dynamical Systems Laboratory, Ferhat Abbas University of Sétif (Algeria); Baadji, N. [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland)

    2016-12-01

    The strained body centered tetragonal (bct) Mn ultrathin film from lattice parameter a=2.89 Å to lattice value of 2.73 Å induces anti-ferromagnetic behavior between Mn layers. The magnetic easy axis of Mn film was demonstrated theoretically to switch from the in-plane to out-of-plane by magneto-optical Kerr effect investigation. By including spin–orbit coupling in full potential linearized augmented plane waves and linearized muffin-tin orbitals methods, manganese ultrathin film displays different magnetic behaviors and the spin-reorientation transition is shown to be correlated to these structural changes. The calculated magnetic moment of manganese planes are enhanced and reach a value of ~4.02 μ{sub B}. The polar magneto-optical Kerr effect is calculated for a photon energy range extended to 15 eV. It shows a pronounced peak in visible light. - Highlights: • The applied strain in Mn-bct structure induces anti-ferromagnetic behavior. • The easy magnetization axis is demonstrated to be out-of-plane. • The magnetic moment of Mn-layers are enhanced and reach a value of ~4.02 μ{sub B}. • Kerr spectra show significant polar responses for Mn films in the visible range. • The prominent structures in the Kerr spectra have been identified.

  17. Electrical and optical properties of mixed phase tungsten trioxide films grown by laser pyrolysis

    CSIR Research Space (South Africa)

    Govender, M

    2014-02-01

    Full Text Available Laser pyrolysis was chosen to synthesize tungsten trioxide starting with tungsten ethoxide precursor. The film was found to have a thickness that varied from 205 nm to 1 µm. X-ray diffraction and Raman spectroscopy confirmed the presence of a...

  18. Influence of cation off-stoichiometry on structural and transport properties of (Ba,La)SnO3 epitaxial thin films grown by pulsed laser deposition

    Science.gov (United States)

    Ozaki, Yusuke; Kan, Daisuke; Shimakawa, Yuichi

    2017-06-01

    We investigate the influences of cation off-stoichiometry on structural and transport properties of 3% La-doped BaSnO3 (BLSO) epitaxial thin films grown on SrTiO3 substrates by pulsed laser deposition. We show that cation off-stoichiometry, namely, Sn excess and Sn deficiency, is introduced by variations in either laser fluence or the cation composition of the target used for the film growth and that the cation off-stoichiometry influences the properties of the grown films. While all films investigated in this study undergo relaxations from the substrate-induced strain, the out-of-plane lattice constant decreases with the increase in the Sn content in the film. The electrical conductivity, carrier concentration, and mobility are strongly dependent on the type of the cation off-stoichiometry (Sn excess and Sn deficiency). The highest room-temperature mobility, 35 cm2/V-1s-1, is seen for a film grown by ablating the stoichiometric target with a fluence of 1.6 J/cm2, which keeps the cation ratio in the film close to the stoichiometric one. The conductivity and the carrier concentration of the Sn-excess films grown with the fluence smaller than 1.6 J/cm2 are as high as 2 × 103 S/cm and 5 × 1020 cm-3, respectively, while the mobility remains as low as 25 cm2/V-1s-1. The observed carrier concentration is slightly higher than that calculated from the stoichiometric composition of BLSO, implying that the excess Sn in the films provides additional carriers and also acts as scattering centers for the carriers. On the other hand, no measurable electrical conduction is observed in the Sn-deficient films grown with a fluence greater than 1.6 J/cm2, indicating that the carriers provided by the dopants are trapped by defects due to the Sn deficiency. We also show that cation off-stoichiometry influences the surface morphology of the films. Our results highlight that the cation stoichiometry of the BLSO films is an important factor influencing their properties.

  19. VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Dong Zhang

    2017-03-01

    Full Text Available Vanadium dioxide (VO2 thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF-plasma assisted oxide molecular beam epitaxy (O-MBE. The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD, atomic force microscopy (AFM, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS analyses. An excellent reversible metal-to-insulator transition (MIT characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows.

  20. Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

    Science.gov (United States)

    Ishizawa, Mamoru; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

    2018-02-01

    We have grown Bi0.9Sr0.1CuSeO epitaxial thin films on MgO and SrTiO3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c-axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2/ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s, and Bi and Cu deficiencies in the films.

  1. Structural features of epitaxial NiFe2O4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

    Science.gov (United States)

    Datta, R.; Loukya, B.; Li, N.; Gupta, A.

    2012-04-01

    NiFe2O4 (NFO) thin films are grown on four different substrates, i.e., Lead Zinc Niobate-Lead Titanate (PZN-PT), Lead Magnesium Niobate-Lead Titanate (PMN-PT), MgAl2O4 (MAO) and SrTiO3 (STO), by a direct liquid injection chemical vapor deposition technique (DLI-CVD) under optimum growth conditions where relatively high growth rate (˜20 nm/min), smooth surface morphology and high saturation magnetization values in the range of 260-290 emu/ cm3 are obtained. The NFO films with correct stoichiometry (Ni:Fe=1:2) grow epitaxially on all four substrates, as confirmed by energy dispersive X-ray spectroscopy, transmission electron microscopy and x-ray diffraction. While the films on PMN-PT and PZN-PT substrates are partially strained, essentially complete strain relaxation occurs for films grown on MAO and STO. The formations of threading dislocations along with dark diffused contrast areas related to antiphase domains having a different cation ordering are observed on all four substrates. These crystal defects are correlated with lattice mismatch between the film and substrate and result in changes in magnetic properties of the films. Atomic resolution HAADF imaging and EDX line profiles show formation of a sharp interface between the film and the substrate with no inter-diffusion of Pb or other elements across the interface. Antiphase domains are observed to originate at the film-substrate interface.

  2. Sulfurization effect on optical properties of Cu2SNS3 thin films grown by two-stage process

    Science.gov (United States)

    Reddy, G. Phaneendra; Reddy, K. T. Ramakrishna

    2017-05-01

    A good phase controlled and impurity free two stage process was used to prepare Cu2SnS3 layers on glass substrates. The layers were prepared by sulfurization of sputtered Cu-Sn metallic precursors by varying the sulfurization temperature (Ts) in the range, 150-450°C, keeping the other deposition parameters constant. A complete investigation of the optical properties of the layers with sulfurization temperature was made by using the optical transmittance and reflectance measurements versus wavelength. The absorption coefficient α, was evaluated using the optical data that showed a α > 104 cm-1 for all the as-grown films. The optical bandgap of the as grown layers was determined from the second derivative diffused reflectance spectra that varied from 1.96 eV to 0.99 eV. Consequently, refractive index and extinction coefficient were calculated from Pankov's relations. In addition, the other optical parameters such as the dielectric constants, dissipation factor and also optical conductivity calculated. A detailed analysis of the dependence of all the above parameters on Ts is reported and discussed.

  3. Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene

    Science.gov (United States)

    Rigosi, Albert F.; Hill, Heather M.; Glavin, Nicholas R.; Pookpanratana, Sujitra J.; Yang, Yanfei; Boosalis, Alexander G.; Hu, Jiuning; Rice, Anthony; Allerman, Andrew A.; Nguyen, Nhan V.; Hacker, Christina A.; Elmquist, Randolph E.; Hight Walker, Angela R.; Newell, David B.

    2018-01-01

    Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride (a-BN and h-BN) films. The a-BN is formed with pulsed laser deposition and the h-BN is grown with triethylboron (TEB) and NH3 precursors, making it the first metal organic chemical vapor deposition (MOCVD) process of this growth type performed on epitaxial graphene. A variety of optical and non-optical characterization methods are used to determine the optical absorption and dielectric functions of the EG, a-BN, and h-BN within the energy range of 1 eV–8.5 eV. Furthermore, we report the first ellipsometric observation of high-energy resonant excitons in EG from the 4H polytype of SiC and an analysis on the interactions within the EG and h-BN heterostructure.

  4. Transient Photoinduced Absorption in Ultrathin As-grown Nanocrystalline Silicon Films

    Directory of Open Access Journals (Sweden)

    Lioutas Ch

    2007-01-01

    Full Text Available AbstractWe have studied ultrafast carrier dynamics in nanocrystalline silicon films with thickness of a few nanometers where boundary-related states and quantum confinement play an important role. Transient non-degenerated photoinduced absorption measurements have been employed to investigate the effects of grain boundaries and quantum confinement on the relaxation dynamics of photogenerated carriers. An observed long initial rise of the photoinduced absorption for the thicker films agrees well with the existence of boundary-related states acting as fast traps. With decreasing the thickness of material, the relaxation dynamics become faster since the density of boundary-related states increases. Furthermore, probing with longer wavelengths we are able to time-resolve optical paths with faster relaxations. This fact is strongly correlated with probing in different points of the first Brillouin zone of the band structure of these materials.

  5. CeCo5 thin films with perpendicular anisotropy grown by molecular beam epitaxy

    Science.gov (United States)

    Sharma, S.; Hildebrandt, E.; Major, M.; Komissinskiy, P.; Radulov, I.; Alff, L.

    2018-04-01

    Buffer-free, highly textured (0 0 1) oriented CeCo5 thin films showing perpendicular magnetic anisotropy were synthesized on (0 0 1) Al2O3 substrates by molecular beam epitaxy. Ce exists in a mixture of Ce3+ and Ce4+ valence states as shown by X-ray photoelectron spectroscopy. The first anisotropy constant, K1, as measured by torque magnetometry was 0.82 MJ/m3 (8.2 ×106erg /cm3) . A maximum coercivity of 5.16 kOe with a negative temperature coefficient of -0.304%K-1 and a magnetization of 527.30 emu/cm3 was measured perpendicular to the film plane at 5 K. In addition, a large anisotropy of the magnetic moment of 15.5% was observed. These magnetic parameters make CeCo5 a potential candidate material for spintronic and magnetic recording applications.

  6. Biomolecular urease thin films grown by laser techniques for blood diagnostic applications

    Energy Technology Data Exchange (ETDEWEB)

    Gyoergy, E., E-mail: eniko.gyorgy@inflpr.ro [Consejo Superior de Investigaciones Cientificas, Institut de Ciencia de Materials de Barcelona and Centre d' Investigacions en Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Spain); National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Sima, F.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Smausz, T. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary); Hopp, B. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Predoi, D. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Sima, L.E.; Petrescu, S.M. [Institute of Biochemistry, Romanian Academy, Splaiul Independentei 296, 060031 Bucharest (Romania)

    2010-05-10

    Matrix assisted pulsed laser evaporation (MAPLE) was used for growing urease thin films designed for bio-sensor applications in clinical diagnostics. The targets exposed to laser radiation were made from a frozen composite manufactured by dissolving biomaterials in distilled water. We used a UV KrF* ({lambda} = 248 nm, {tau}{sub FWHM} {approx_equal} 30 ns, {nu} = 10 Hz) excimer source for multipulse laser irradiation of the frozen targets cooled with Peltier elements. The laser source was operated at an incident fluence of 0.4 J/cm{sup 2}. Urease activity and kinetics were assayed by the Worthington method that monitors urea hydrolysis by coupling ammonia production to a glutamate dehydrogenase reaction. A decrease in absorbance was measured at 340 nm and correlated with the enzymatic activity of urease. We show that the urease films obtained by MAPLE techniques remain active up to three months after deposition.

  7. Efficient photovoltaic conversion of graphene–carbon nanotube hybrid films grown from solid precursors

    International Nuclear Information System (INIS)

    Gan, Xin; Lv, Ruitao; Bai, Junfei; Zhang, Zexia; Wei, Jinquan; Huang, Zheng-Hong; Zhu, Hongwei; Kang, Feiyu; Terrones, Mauricio

    2015-01-01

    Large-area (e.g. centimeter size) graphene sheets are usually synthesized via pyrolysis of gaseous carbon precursors (e.g. methane) on metal substrates like Cu using chemical vapor deposition (CVD), but the presence of grain boundaries and the residual polymers during transfer deteriorates significantly the properties of the CVD graphene. If carbon nanotubes (CNTs) can be covalently bonded to graphene, the hybrid system could possess excellent electrical conductivity, transparency and mechanical strength. In this work, conducting and transparent CNT–graphene hybrid films were synthesized by a facile solid precursor pyrolysis method. Furthermore, the synthesized CNT–graphene hybrid films display enhanced photovoltaic conversion efficiency when compared to devices based on CNT membranes or graphene sheets. Upon chemical doping, the graphene–CNT/Si solar cells reveal power conversion efficiencies up to 8.50%. (paper)

  8. S Sensors: Fumarate-Based fcu-MOF Thin Film Grown on a Capacitive Interdigitated Electrode

    KAUST Repository

    Yassine, Omar

    2016-10-31

    Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H2S) at room temperature, using thin films of rare-earth metal (RE)-based metal-organic framework (MOF) with underlying fcu topology. This unique MOF-based sensor is made via the insitu growth of fumarate-based fcu-MOF (fum-fcu-MOF) thin film on a capacitive interdigitated electrode. The sensor showed a remarkable detection sensitivity for H2S at concentrations down to 100ppb, with the lower detection limit around 5ppb. The fum-fcu-MOF sensor exhibits a highly desirable detection selectivity towards H2S vs. CH4, NO2, H2, and C7H8 as well as an outstanding H2S sensing stability as compared to other reported MOFs. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Novel UV-emitting single crystalline film phosphors grown by LPE method

    Czech Academy of Sciences Publication Activity Database

    Zorenko, Y.; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Nikl, Martin; Mareš, Jiří A.; Winnacker, A.

    2010-01-01

    Roč. 45, 3-6 (2010), 444-448 ISSN 1350-4487 R&D Projects: GA ČR GA202/08/0893 Institutional research plan: CEZ:AV0Z10100521 Keywords : UV luminescence * single crystalline film * liquid phase epitaxy * garnets and perovskites * Ce 3+ * Pr 3+ * La 3+ * Sc 3+ * Bi 3+ dopants Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.019, year: 2010

  10. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    Administrator

    face oxygen in forms of –OH groups (Islam et al 1996;. Fan et al 2007; Rao et al 2010). Figure 5(a) shows that the area of the peak corresponding to Oi is higher than that of the peak corresponding to Ov for the film annealed at 400 °C. This in turn justifies the presence of higher- intensity yellowish-green emission peak (at ...

  11. Continuous Ultra-Thin MOS2 Films Grown by Low-Temperature Physical Vapor Deposition (Postprint)

    Science.gov (United States)

    2014-07-01

    ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The...process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with...target. Throughout the pro- cess, the temperature was measured with an IR pyrometer calibrated with a thermocouple for each substrate material. The

  12. Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

    Science.gov (United States)

    Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

    2017-11-01

    Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1-x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 thermal conductivity was well accounted for by the compositional dependence of the mixing entropy. Some of these values agree exactly with the amorphous limit predicted by theoretical calculations. The smallest lattice thermal conductivity found for the present samples is lower than that of nanostructured Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

  13. Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

    Directory of Open Access Journals (Sweden)

    Andrei Ionut Mardare

    2014-01-01

    Full Text Available A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven.

  14. Advanced APCVD-processes for high-temperature grown crystalline silicon thin film solar cells.

    Science.gov (United States)

    Driessen, Marion; Merkel, Benjamin; Reber, Stefan

    2011-09-01

    Crystalline silicon thin film (cSiTF) solar cells based on the epitaxial wafer-equivalent (EpiWE) concept combine advantages of wafer-based and thin film silicon solar cells. In this paper two processes beyond the standard process sequence for cSiTF cell fabrication are described. The first provides an alternative to wet chemical saw damage removal by chemical vapor etching (CVE) with hydrogen chloride in-situ prior to epitaxial deposition. This application decreases the number of process and handling steps. Solar cells fabricated with different etching processes achieved efficiencies up to 14.7%. 1300 degrees C etching temperature led to better cell results than 1200 degrees C. The second investigated process aims for an improvement of cell efficiency by implementation of a reflecting interlayer between substrate and active solar cell. Some characteristics of epitaxial lateral overgrowth (ELO) of a patterned silicon dioxide film in a lab-type reactor constructed at Fraunhofer ISE are described and first solar cell results are presented.

  15. Physical properties characterization of WO3 films grown by hot-filament metal oxide deposition

    International Nuclear Information System (INIS)

    Diaz-Reyes, J.; Delgado-Macuil, R.J.; Dorantes-Garcia, V.; Perez-Benitez, A.; Balderas-Lopez, J.A.; Ariza-Ortega, J.A.

    2010-01-01

    WO 3 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains that WO 3 presents mainly monoclinic crystalline phase. The chemical stoichiometry is obtained by X-ray Photoelectron Spectroscopy (XPS). The IR spectrum of the as-grown WO 3 presents broad peaks in the range of 1100 to 3600 cm -1 . A broad band in the 2200 to 3600 cm -1 region and the peaks sited at 1645 and 1432 cm -1 are well resolved, which are originated from moisture and are assigned to ν(OH) and δ(OH) modes of adsorbed water and the corresponding tungsten oxide vibrations are in infrared region from 400 to 1453 cm -1 and around 3492 cm -1 , which correspond to tungsten-oxygen (W-O) stretching, bending and lattice modes. The Raman spectrum shows intense peaks at 801, 710, 262 and 61 cm -1 that are typical Raman peaks of crystalline WO 3 (m-phase) that correspond to stretching vibrations of the bridging oxygen, which are assigned to W-O stretching (ν) and W-O bending (δ) modes, respectively. By transmittance measurements obtains that the WO 3 band gap can be varied from 2.92 to 3.13 eV in the investigated annealing temperature range.

  16. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Roro, K T; Dangbegnon, J K; Sivaraya, S; Westraadt, J E; Neethling, J H; Leitch, A W R; Botha, J R; Kassier, G H

    2008-01-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm 2 V −1 s −1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 10 17 cm −3 , as well as a total acceptor concentration of mid-10 15 cm −3 . Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

  17. Grain Wall Boundaries in Centimeter-scale Continuous Monolayer WS2 Film Grown By Chemical Vapor Deposition.

    Science.gov (United States)

    Jia, Zhiyan; Hu, Wentao; Xiang, Jianyong; Wen, Fusheng; Nie, Anmin; Mu, Congpu; Zhao, Zhisheng; Xu, Bo; Tian, Yongjun; Liu, Zhongyuan

    2018-04-05

    Centimeter-scale continuous monolayer WS2 film with large tensile strain has been successfully grown on oxidized silicon substrate by chemical vapor deposition (CVD), in which monolayer grains can be more than 200 um in size. Monolayer WS2 grains are observed to merge together via not only traditional grain boundaries (GBs) but also non-traditional ones, which are named as grain walls (GWs) due to their nanometer-scale widths. The GWs are revealed to consist of two or three layers. Though not a monolayer, the GWs exhibit significantly enhanced fluorescence (FL) and photoluminescence (PL). This enhancement may be attributed to abundant structural defects such as stacking faults and partial dislocations in the GWs, which are clearly observable in atomically resolved HRTEM and STEM images. Moreover, GW-based phototransistor is found to deliver higher photocurrent than that based on monolayer film. These features of GWs provide a clue to microstructure engineering of monolayer WS2 for specific applications in (opto)electronics. © 2018 IOP Publishing Ltd.

  18. Structural and magnetic phase transitions in chromium nitride thin films grown by rf nitrogen plasma molecular beam epitaxy

    Science.gov (United States)

    Alam, Khan; Disseler, Steven M.; Ratcliff, William D.; Borchers, Julie A.; Ponce-Pérez, Rodrigo; Cocoletzi, Gregorio H.; Takeuchi, Noboru; Foley, Andrew; Richard, Andrea; Ingram, David C.; Smith, Arthur R.

    2017-09-01

    A magnetostructural phase transition is investigated in single-crystal chromium nitride (CrN) thin films grown by rf plasma molecular beam epitaxy on MgO(001) substrates. While still within the vacuum environment following molecular beam epitaxy growth, in situ low-temperature scanning tunneling microscopy, and in situ variable low-temperature reflection high-energy electron diffraction are applied, revealing an atomically smooth and metallic CrN(001) surface, and an in-plane structural transition from 1 ×1 (primitive CrN unit cell) to √{2 }×√{2 }-R 45∘ with a transition temperature of (278 ±3 ) K, respectively. Ex situ temperature-dependent measurements using neutron diffraction are also performed, looking at the structural peaks and likewise revealing a first-order structural transition along the [111] out-of-plane direction, with transition temperatures of (268 ± 3) K. Turning to the magnetic peaks, neutron diffraction confirms a clear magnetic transition from paramagnetic at room temperature to antiferromagnetic at low temperatures with a sharp, first-order phase transition and a Néel temperature of (270 ±2 ) K or (280 ±2 ) K for two different films. In addition to the experimental measurements of structural and magnetic ordering, we also discuss results from first-principles theoretical calculations which explore various possible magnetostructural models.

  19. Defects in Arsenic Implanted p + -n- and n + -p- Structures Based on MBE Grown CdHgTe Films

    Science.gov (United States)

    Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytskyy, H. V.; Świątek, Z.

    2018-02-01

    Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1-x Te ( x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n +- p- and n +- n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p +- n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.

  20. Optical properties of large-area MoS2 thin films grown via magnetron sputtering: Thickness and substrate dependence

    Science.gov (United States)

    Alkabsh, Asma; Samassekou, Hassana; Mazumdar, Dipanjan

    Transition metal dichalcogenides (TMDS) have gained exceptional attention because of their thickness dependent electronic structure which makes them suitable for electronic and optoelectronic applications. MoS2 is among the most promising material in this family. Recently we have successfully developed growth of large-area MoS2 using magnetron sputtering. In this work, we investigated the large-area optical properties of few and bilayer MoS2 grown on different amorphous underlayers (BN and SiO2) using spectroscopic ellipsometry (SE), UV-VIS and Raman spectroscopy. SE spectra provided thickness and optical constants within 1.0-3.0 eV range, whereas broadband (0.5-6.5 eV) transmission and reflectance measurements provided direct measurements of optical constants through Glover-Tinkham analysis. A comprehensive analysis of thickness and substance dependence of optical properties of our large-area films will be presented and compared with existing literature reports and first-principles electronic structure. Also, Raman measurements reveal interesting disorder related effects on our MoS2 films.

  1. Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

    International Nuclear Information System (INIS)

    Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

    2004-01-01

    Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Challenges in TEM sample preparation of solvothermally grown CuInS2 films.

    Science.gov (United States)

    Frank, Anna; Changizi, Rasa; Scheu, Christina

    2018-06-01

    Transmission electron microscopy (TEM) is a widely used tool to characterize materials. The required samples need to be electron transparent which should be achieved without changing the microstructure. This work describes different TEM sample preparation techniques of nanostructured CuInS 2 thin films on fluorine-doped tin oxide substrates, synthesized solvothermally using l-cysteine as sulfur source. Focused ion beam lamellae, conventional cross section samples and scratch samples have been prepared and investigated. It was possible to prepare appropriate samples with each technique, however, each technique brings with it certain advantages and disadvantages. FIB preparation of solvothermally synthesized CuInS 2 suffers from two main drawbacks. First, the whole CuInS 2 layer displays a strongly increased Cu content caused by Cu migration and preferential removal of In. Further, electron diffraction shows the formation of an additional CuS phase after Ga + bombardment. Second, diffraction analysis is complicated by a strong contribution of crystalline Pt introduced during the FIB preparation and penetrating into the porous film surface. The conventional cross sectional CuInS 2 sample also shows a Cu signal enhancement which is caused by contribution of the brass tube material used for embedding. Additionally, Cu particles have been observed inside the CuInS 2 which have been sputtered on the film during preparation. Only the scratch samples allow an almost artefact-free and reliable elemental quantification using energy-dispersive X-ray spectroscopy. However, scratch samples suffer from the drawback that it is not possible to determine the layer thickness, which is possible for both cross sectional preparation techniques. Consequently, it is concluded that the type of sample preparation should be chosen dependent on the required information. A full characterization can only be achieved when the different techniques are combined. Copyright © 2018 Elsevier Ltd. All

  3. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Čížek, J.; Kužel, R.; Bulíř, Jiří; Lančok, Ján; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.; Anwand, W.; Brauer, G.

    2012-01-01

    Roč. 45, č. 22 (2012), 1-12 ISSN 0022-3727 R&D Projects: GA ČR(CZ) GAP108/11/0958; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : ZnO thin film * pulsed laser deposition * x-ray diffraction positron implantation spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.528, year: 2012 http://dx.doi.org/10.1088/0022-3727/45/22/225101

  4. Effects of sic buffer layer on the optical properties of ZnO films grown on Si (1 1 1) substrates

    International Nuclear Information System (INIS)

    Zhang Yang; Zheng Haiwu; Su Jianfeng; Lin Bixi; Fu Zhuxi

    2007-01-01

    ZnO films have been grown by a sol-gel process on Si (1 1 1) substrates with and without SiC buffer layers. The influence of SiC buffer layer on the optical properties of ZnO films grown on Si (1 1 1) substrates was investigated. The intensity of the E 2 (high) phonon peak in the micro-Raman spectrum of ZnO film with the SiC buffer layer is stronger than that of the sample without the SiC buffer layer, and the breadth of E 2 (high) phonon peak of ZnO film with the SiC buffer layer is narrower than that of the sample without the SiC buffer layer. These results indicated that the crystalline quality of the sample with the SiC buffer layer is better than that of the sample without the SiC buffer layer. In photoluminescence spectra, the intensity of free exciton emission from ZnO films with the SiC buffer was much stronger than that from ZnO film without the SiC buffer layer, while the intensity of deep level emission from sample with the SiC buffer layer was about half of that of sample without the SiC buffer layer. The results indicate the SiC buffer layer improves optical qualities of ZnO films on Si (1 1 1) substrates

  5. Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

    Science.gov (United States)

    Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

    2017-10-01

    Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

  6. Investigation of MBE grown polycrystalline CdTe films on the Medipix readout chip

    Science.gov (United States)

    Schütt, S.; Vogt, A.; Frei, K.; Fischer, F.; Fiederle, M.

    2017-06-01

    Cadmium Telluride (CdTe) films are directly deposited on a CMOS (complementary metal-oxide-semiconductor) based readout chip as sensor layer for X-ray detection. This is performed by using a modified Molecular Beam Epitaxy (MBE) setup with a carbon collimator enabling growth rates up to 10 μm/h. To obtain a good contacting behaviour of the 25-50 μm thick CdTe films, Te and Sb2Te3 are additionally evaporated during the process. The investigation of polycrystalline sensor layers deposited at 400 °C with SEM (scanning electron microscopy) and XRD (X-ray diffraction) reveals a columnar growth of the individual grains oriented predominantly in (111). By PES (photoelectron spectroscopy) measurements the chemical composition of the different layers is identified in a depth profile and changes in work function along the contact structure are observed. Detector properties reveal a linear behaviour of the count rate with increasing radiation intensity as well as sensibility to holes and electrons. Spatial resolution measurements result in a resolution of 5 lp/mm, which is a mandatory requirement for medical applications.

  7. Optical and electrical characterization of CIGS thin films grown by electrodeposition route

    Science.gov (United States)

    Adel, Chihi; Fethi, Boujmil Mohamed; Brahim, Bessais

    2016-02-01

    In this paper, the electrochemical impedance spectroscopy was handled to study the electrochemical attitude of quaternary alloy Cu (In, Ga) Se2/Na2SO4 electrolyte interface. Subsequently, an annealing treatment was performed at various temperatures (250-400 °C). The material features of Cu (In, Ga) Se2 films are controlled by the percentage of gallium content. XRD studies showed three favorite orientations along the (112), (220), and (116) planes for all samples. The morphological and chemical composition studies exhibited Ga/(Ga + In) ratio ranging from 0.27 to 0.32, and RMS surface roughness was in the range 54.2-77.8 nm, respectively. The optical band gap energy of the CIGS alloys can be strongly controlled by adjusting gallium and indium concentrations. EIS measurement has been modeled by using an equivalent circuit. Mott-Schottky plot illustrates p-type conductivity of CIGS film with a carrier concentration around 1016 cm-3, a flat band potential V fb ranging from -0.68 to -0.57 V, and depletion layer thickness rises from 0.24 to 0.36 μm.

  8. Structural characterization of niobium oxide thin films grown on SrTiO3 (111) and (La,Sr)(Al,Ta)O3 (111) substrates

    Science.gov (United States)

    Dhamdhere, Ajit R.; Hadamek, Tobias; Posadas, Agham B.; Demkov, Alexander A.; Smith, David J.

    2016-12-01

    Niobium oxide thin films have been grown by molecular beam epitaxy on SrTiO3 (STO) (111) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (LSAT) (111) substrates. Transmission electron microscopy (TEM) confirmed the formation of high quality films with coherent interfaces. Films grown with higher oxygen pressure on STO (111) resulted in a (110)-oriented NbO2 phase with a distorted rutile structure, which can be described as body-centered tetragonal. The a lattice parameter of NbO2 was determined to be ˜13.8 Å in good agreement with neutron diffraction results published in the literature. Films grown on LSAT (111) at lower oxygen pressure produced the NbO phase with a defective rock salt cubic structure. The NbO lattice parameter was determined to be a ≈ 4.26 Å. The film phase/structure identification from TEM was in good agreement with in situ x-ray photoelectron spectroscopy measurements that confirmed the dioxide and monoxide phases, respectively. The atomic structure of the NbO2/STO and NbO/LSAT interfaces was determined based on comparisons between high-resolution electron micrographs and image simulations.

  9. Highly textured Gd2Zr2O7 films grown on textured Ni-5 at.%W substrates by solution deposition route: Growth, texture evolution, and microstructure dependency

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; Napari, M.

    2012-01-01

    or crystallization in the thicker films. This work not only demonstrates a route for producing textured Gd2Zr2O7 buffer layers with dense structure directly on technical substrates, but also provides some fundamental understandings related to chemical solution derived films grown on metallic substrates.......Growth, texture evolution and microstructure dependency of solution derived Gd2Zr2O7 films deposited on textured Ni-5 at.%W substrates have been extensively studied. Influence of processing parameters, in particular annealing temperature and dwell time, as well as thickness effect on film texture...... the difference of interfacial energy along two directions in the anisotropic metallic substrate. Growth of Gd2Zr2O7 films displays an ultrafast kinetics under optimized conditions. Independency of sharp epitaxial (004) and polycrystalline (222) orientation is revealed from further synchrotron diffraction studies...

  10. Properties of epitaxial Ba2YCu3O7-x films on LaAlO3(001) grown using optimized conditions

    International Nuclear Information System (INIS)

    Siegal, M.P.; Phillips, J.M.; van Dover, R.B.; Tiefel, T.H.; Marshall, J.H.; Carlson, D.J.

    1990-01-01

    The superconducting and structural properties of Ba 2 YCu 3 O 7-x (BYCO) films on LaAlO 3 (001) substrates can be improved by carefully optimizing the post-deposition annealing parameters. Films are grown by codeposition of BaF 2 , Y, and Cu in the correct stoichiometric ratio to within 1% of 2:1:3. Compositional deviations greater than ± 1% result in the degradation of film quality. Important annealing parameters include the ambient, annealing temperature, oxidation temperature, and duration of the anneal. Films are characterized for epitaxial quality (χ min ), morphology, critical temperature (T c ), sharpness of the superconducting transition (ΔT), and critical current density (J c ). The optimized films have relatively smooth morphology with χ min c > 90 K, ΔT c > 10 6 A/cm 2 in essentially zero magnetic field at 77 K

  11. Microfabrication of a scanning probe with NV centers in a selectively grown diamond thin film through a xenon difluoride etching process

    Science.gov (United States)

    Zhu, Minjie; Li, Jinhua; Toda, Masaya; Ono, Takahito

    2017-12-01

    A scanning probe with nitrogen vacancy (NV) centers in diamond thin film was fabricated via a standard micro/nano electromechanical system process. The diamond thin film was selectively grown by microwave plasma enhanced chemical vapor deposition on a partially nucleated silicon surface. NV centers are embedded during the diamond growth with a pure nitrogen gas flow to the growth chamber. The existence of NV centers in the diamond thin film was confirmed by photoluminescence measurements. In addition, we found that a xenon difluoride (XeF2) etching process and anneal treatment have an influence on the existence of NV centers in the diamond. The fabricated scanning probe with NV centers in diamond thin film can be used as a magnetic scanning sensor. It is anticipated that the alternative method of selectively growing diamond thin film provides various diamond structures in diverse applications.

  12. Effect of annealing on structural and optical properties of Cu2ZnSnS4 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

    2015-01-01

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu 2 ZnSnS 4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H 2 S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N 2 at the optimized conditions. - Highlights: • Cu 2 ZnSnS 4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H 2 S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N 2 effectively inhibits the formation of Sn x S secondary phases.

  13. Formation of pyramid-like nanostructures in MBE-grown Si films on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Galiana, N.; Martin, P.P.; Rodriguez-Canas, E.; Esteban-Betegon, F.; Alonso, M.; Ruiz, A. [CSIC, Instituto de Ciencia de Materiales de Madrid, Madrid (Spain); Garzon, L.; Ocal, C. [CSIC, Institut de Ciencia de Materials de Barcelona, Barcelona (Spain); Munuera, C. [CSIC, Instituto de Ciencia de Materiales de Madrid, Madrid (Spain); CSIC, Institut de Ciencia de Materials de Barcelona, Barcelona (Spain); Varela, M. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    2011-03-15

    The growth of Si homoepitaxial layers on Si(001) substrates by molecular beam epitaxy is analyzed for a set of growth conditions in which diverse nanometer-scale features develop. Using Si substrates prepared by exposure to HF vapor and annealing in ultra-high vacuum, a rich variety of surface morphologies is found for different deposited layer thicknesses and substrate temperatures in a reproducible way, showing a critical dependence on both. Arrays of 3D islands (truncated pyramids), percolated ridge networks, and square pit (inverted pyramid) distributions are observed. We analyze the obtained arrangements and find remarkable similarities to other semiconductor though heteroepitaxial systems. The nanoscale entities (islands or pits) display certain self assembly and ordering, concerning size, shape, and spacing. Film growth sequence follows the 'islands-coalescence-2D growth' pathway, eventually leading to optimum flat morphologies for high enough thickness and temperature. (orig.)

  14. Formation and physical properties of YBCO thick films grown by using the electrophoretic deposition method

    CERN Document Server

    Kim, U J; Kim, Y C; Han, S K; Kang, K Y

    1999-01-01

    Thick films of the YBa sub 2 Cu sub 3 O subgamma sub - subdelta (YBCO) superconductor were prepared by using the electrophoretic deposition technique and a flexible wire as the substrate. The transition temperature of the wires was 91 K, the intragranular magnetic critical current density J sub c sub g sup m sup a sup g was about 10 sup 5 A/cm sup 2 at 77 K in a weak field, and the transport J sub c sup t sup r sup a sup n sup s was about 365 A/cm sup 2 at 77 K. We calculated the intergranular magnetic critical current J sub c sub J sup m sup a sup g and the activation energy from the AC-susceptibility measurements, and their values were about 444 A/cm sup 2 at 77 K and 2.02 eV, respectively.

  15. Characterization of WO3 Thin Films Grown on Silicon by HFMOD

    Directory of Open Access Journals (Sweden)

    Joel Díaz-Reyes

    2013-01-01

    modes of as-deposited WO3 and annealed at 500°C present clearly differences. WO3 band gap energy can be varied from 2.92 to 3.15 eV by annealing WO3 from 0 to 500°C as was obtained by transmittance measurements. The photoluminescence response of the as-deposited film presents three radiative transitions observed at 2.85, 2.41, and 2.04 eV that could be associated with oxygen vacancies; the first one is shifted to higher energies as the annealing temperature is increased due to the change of crystalline phase of the WO3.

  16. Micro structural, electrical and optical properties of highly (2 2 0) oriented spinel Mn–Co–Ni–O film grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Wei; Zhang, Leibo; Ouyang, Cheng; Wu, Jing [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Huang, Zhiming, E-mail: zmhuang@mail.sitp.ac.cn [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Xu, Xiao-feng [College of science, Donghua Unversity, Shanghai (China)

    2014-08-30

    Highlights: • Highly (2 2 0) oriented Mn{sub 1.4}Co{sub 1.0}Ni{sub 0.6}O{sub 4} (MCN) films are grown by radio frequency sputtering method. • Post annealed MCN samples show a resistivity of 240–250 Ω cm and NTC value of 4% K{sup −1} at 295 K. • Improved oxygen stoichiometry and fine reproducibility are achieved after post annealing process. • Indirect optical band gaps are about 0.51 eV for as-grown MCN films and 0.57 eV for post annealed ones. - Abstract: Spinel AB{sub 2}O{sub 4} oxide Mn{sub 1.4}Co{sub 1.0}Ni{sub 0.6}O{sub 4} (MCN) films are fabricated on Al{sub 2}O{sub 3} amorphous substrate by radio frequency (RF) magnetron sputtering method at different sputtering powers. The surface morphology and microstructure of the films are studied by SEM, atomic force microscopy (AFM) and X-ray diffraction. A major advance is the sputtering deposition of highly oriented MCN thin films. Variable temperature electrical properties of the as-grown and post annealed samples are investigated in 230–325 K temperature range. The dependence of electrical properties on growth conditions is discussed in detail. The resistivity of annealed MCN films is about 240–250 Ω cm with a negative temperature coefficient of about 4% K{sup −1} at room temperature, which is a breakthrough for thermal sensing application by RF sputtering method. Optical properties of the MCN samples are studied within 0.33-10 μm band, and the optical bandgaps for the as-grown and post annealed MCN samples are about 0.51 eV and 0.57 eV, respectively.

  17. Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films

    International Nuclear Information System (INIS)

    Mammadov, E; Haneta, M; Toyota, H; Uchitomi, N

    2011-01-01

    The photoluminescence (PL) properties of heavily Mn-doped ZnSnAs 2 layers epitaxially grown on nearly lattice-matched semi-insulating InP substrates are studied. PL spectra are obtained for samples with Mn concentrations of 5, 12 and 24 mol% relative to the combined concentrations of Zn and Sn. A broad emission band centered at ∼ 1 eV is detected for Mn-doped layers at room temperature. The emission is a intense broad asymmetric line at low temperatures. The line is reconstructed by superposition of two bands with peak energies of ∼ 0.99 and 1.07 eV, similar to those reported for InP. These bands are superimposed onto a 1.14 eV band with well-resolved phonon structure for the layer doped with 12 % Mn. Recombination mechanism involving the split-off band of the ZnSnAs 2 is suggested. Temperature dependence of integrated intensities of the PL bands indicates to thermally activated emission with activation energies somewhat different from those found for InP. Mn substitution at cationic sites increases the concentration of holes which may act as recombination centers. Recombination to the holes bound to Mn ions with the ground state located below the top of the valence band has been proposed as a possible PL mechanism.

  18. Oxide Ceramic Films Grown on 55Ni-45Ti for NASA and Department of Defense Applications: Unidirectional Sliding Friction and Wear Evaluation

    Science.gov (United States)

    Miyoshi, Kazuhisa; Lukco, Dorothy; Cytron, Sheldon J.

    2004-01-01

    An investigation was conducted to examine the friction and wear behavior of the two types of oxide ceramic films furnished by the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) under Space Act Agreement SAA3 567. These two types of oxide ceramics were grown on 55Ni-45Ti (60 wt% Ni and 40 wt% Ti) substrates: one was a TiO2 with no other species (designated the B film) and the other was a TiO2 with additional species (designated the G film). Unidirectional ball-on-disk sliding friction experiments were conducted with the oxide films in contact with sapphire at 296 K (23 C) in approx. 50-percent relative humidity laboratory air in this investigation. All material characterization and sliding friction experiments were conducted at the NASA Glenn Research Center. The results indicate that both films greatly improve the surface characteristics of 55Ni-45Ti, enhancing its tribological characteristics. Both films decreased the coefficient of friction by a factor of 4 and increased wear resistance by a two-figure factor, though the B film was superior to the G film in wear resistance and endurance life. The levels of coefficient of friction and wear resistance of both films in sliding contact with sapphire were acceptable for NASA and Department of Defense tribological applications. The decrease in friction and increase in wear resistance will contribute to longer wear life for parts, lower energy consumption, reduced related breakdowns, decreased maintenance costs, and increased reliability.

  19. Structural and optical properties of GaSb films grown on AlSb/Si (100) by insertion of a thin GaSb interlayer grown at a low temperature

    International Nuclear Information System (INIS)

    Noh, Young Kyun; Kim, Moon Deock; Oh, Jae Eung; Yang, Woo Chul

    2010-01-01

    We have investigated the structural and the optical properties of GaSb films with a thin AlSb buffer layer and a GaSb interlayer grown on Si (100) substrates by using molecular beam epitaxy. Reflection high-energy electron diffraction and atomic force microscopy measurements of the thin AlSb buffer layers showed that the surface had uniformly-sized quantum dots with a low defect density. The surface roughness of a GaSb film with a thin GaSb interlayer grown at a low temperature was decreased by a factor of about 5 compared with the roughness of the GaSb film without the thin GaSb interlayer. In addition, double-crystal X-ray diffraction and photoluminescence results showed that the structural and the optical properties of the GaSb layer with the GaSb interlayer were improved significantly. We suggest that the significant reduction of the dislocation density in the GaSb film was due to the dislocations being prevented from propagating into the GaSb overlayer by the thin GaSb interlayer.

  20. Nanoscale Phase Separation in Fe3O4(111) Films on Sapphire(0001) and Phase Stability of Fe3O4(001) Films on MgO(001) Grown by Oxygen-Plasma-Assisted Molecular Beam Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Toney, Michael F

    2003-06-25

    We report a phase instability in oxygen-plasma-assisted molecular beam epitaxy of Fe{sub 3}O{sub 4} films on sapphire (0001) substrates. Under a wide range of growth conditions, Fe{sub 3}O{sub 4} (111) films phase separate, on a nanometer length scale, into Fe{sub 3}O{sub 4}, Fe0 and metallic Fe, which is attributed to formation of the thermodynamically unstable phase Fe0 in the initial stages of (111) growth. In contrast, Fe{sub 3}O{sub 4} (001) films, grown simultaneously on MgO(001) substrates, do not exhibit this phase instability. We specify growth conditions for which single-phase, epitaxial Fe{sub 3}O{sub 4} (111) films can be grown by plasma-assisted molecular beam epitaxy or by reactive evaporation of Fe in molecular oxygen. Film orientation and phase separation strongly influence magnetic properties. Single-phase Fe{sub 3}O{sub 4} (111) films are much more difficult to magnetize than Fe{sub 3}O{sub 4} (001) films and phase separation makes the films even more difficult to magnetize.

  1. Effect of BST film thickness on the performance of tunable interdigital capacitors grown by MBE

    Science.gov (United States)

    Meyers, Cedric J. G.; Freeze, Christopher R.; Stemmer, Susanne; York, Robert A.

    2017-12-01

    Voltage-tunable, interdigital capacitors (IDCs) were fabricated on Ba0.29Sr0.71TiO3 grown by hybrid molecular beam epitaxy (MBE). In this growth technique, we utilize the metal-organic precursor titanium tetraisopropoxide rather than solid-source Ti as with conventional MBE. Two samples of varying BaxSr(1-x)TiO3 (BST) thicknesses were fabricated and analyzed. High-quality, epitaxial Pt electrodes were deposited by sputtering from a high-purity Pt target at 825 °C. The Pt electrodes were patterned and etched by argon ion milling, passivated with reactively sputtered SiO2, and then metallized with lift-off Ti/Au. The fabricated devices consisted of two-port IDCs embedded in ground-signal-ground, coplanar waveguide (CPW) transmission lines to enable radio-frequency (RF) probing. The sample included open and thru de-embedding structures to remove pad and CPW parasitic impedances. Two-port RF scattering (S) parameters were measured from 100 MHz to 40 GHz while DC bias was stepped from 0 V to 100 V. The IDCs exhibit a high zero-bias radio-frequency (RF) quality factor (Q) approaching 200 at 1 GHz and better than 2.3:1 capacitance tuning for the 300-nm-thick sample. Differences in the Q(V) and C(V) response with varying thicknesses indicate that unknown higher order material phenomena are contributing to the loss and tuning characteristics of the material.

  2. Post annealing effect on transport properties of La0.67Ca0.33MnO3 films grown on vicinal cut substrates

    International Nuclear Information System (INIS)

    Yu, L.; Wang, Y.; Li, H.S.; Liu, X.; Zhang, P.X.

    2011-01-01

    Highlights: → Epitaxial La 0.67 Ca 0.33 MnO 3 thin films grown on vicinal cut substrate. → The metal-insulator transition temperature shows large enhancement about 20-30 K towards higher temperature after post annealing. → Film on 10 o vicinal cut substrate has a metal-insulator transition temperature of 291.4 K. - Abstract: La 0.67 Ca 0.33 MnO 3 thin films have been grown on 10 o , 15 o , and 20 o vicinal cut SrTiO 3 (1 0 0) substrates by pulse laser deposition. The single phase and the least textured growth have been studied by X-ray diffraction analysis. The post annealing effect with high temperature and high oxygen pressure on the transport properties of films has been investigated by resistance versus temperature measurements. Films with post annealing show large enhancement of metal-insulator transition temperature T p about 20-30 K towards higher temperature and obvious decrease of resistance, which is attributed to the refilling of oxygen, the change of Mn-O-Mn angle and the improvement of crystallinity by the post annealing effect. Specially, film on 20 o vicinal cut substrate exhibits the biggest range gap of peak resistance drop, which may originate from more defects caused by steps at this tilt angle and many of these defects are removed after post annealing.

  3. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  4. Comparing XPS on bare and capped ZrN films grown by plasma enhanced ALD: Effect of ambient oxidation

    Science.gov (United States)

    Muneshwar, Triratna; Cadien, Ken

    2018-03-01

    In this article we compare x-ray photoelectron spectroscopy (XPS) measurements on bare- and capped- zirconium nitride (ZrN) films to investigate the effect of ambient sample oxidation on the detected bound O in the form of oxide ZrO2 and/or oxynitride ZrOxNy. ZrN films in both bare- and Al2O3/AlN capped- XPS samples were grown by plasma-enhanced atomic layer deposition (PEALD) technique using tetrakis dimethylamino zirconium (TDMAZr) precursor, forming gas (5% H2, rest N2) inductively coupled plasma (ICP), and as received research grade process gases under identical process conditions. Capped samples were prepared by depositing 1 nm thick PEALD AlN on ZrN, followed by additional deposition of 1 nm thick ALD Al2O3, without venting of ALD reactor. On bare ZrN sample at room temperature, spectroscopic ellipsometry (SE) measurements with increasing ambient exposure times (texp) showed a self-limiting surface oxidation with the oxide thickness (dox) approaching 3.7 ± 0.02 nm for texp > 120 min. In XPS data measured prior to sample sputtering (tsput = 0), ZrO2 and ZrOxNy were detected in bare- samples, whereas only ZrN and Al2O3/AlN from capping layer were detected in capped- samples. For bare-ZrN samples, appearance of ZrO2 and ZrOxNy up to sputter depth (dsput) of 15 nm in depth-profile XPS data is in contradiction with measured dox = 3.7 nm, but explained from sputtering induced atomic inter-diffusion within analyzed sample. Appearance of artifacts in the XPS spectra from moderately sputtered (dsput = 0.2 nm and 0.4 nm) capped-ZrN sample, provides an evidence to ion-bombardment induced modifications within analyzed sample.

  5. In Situ STM Observation of Nonmagnetic Impurity Effect in MBE-grown CeCoIn5 Films

    Science.gov (United States)

    Haze, Masahiro; Torii, Yohei; Peters, Robert; Kasahara, Shigeru; Kasahara, Yuichi; Shibauchi, Takasada; Terashima, Takahito; Matsuda, Yuji

    2018-03-01

    Local electronic effects in the vicinity of an impurity provide pivotal insight into the origin of unconventional superconductivity, especially when the materials are located on the edge of magnetic instability. In high-temperature cuprate superconductors, a strong suppression of superconductivity and appearance of low-energy bound states are clearly observed near nonmagnetic impurities. However, whether these features are common to other strongly correlated superconductors has not been established experimentally. Here, we report the in situ scanning tunneling microscopy observation of electronic structure around a nonmagnetic Zn impurity in heavy-fermion CeCo(In1-xZnx)5 films, which are epitaxially grown by the state-of-the-art molecular beam epitaxy technique. The films have very wide atomically flat terraces and Zn atoms residing on two different In sites are clearly resolved. Remarkably, no discernible change is observed for the superconducting gap at and around the Zn atoms. Moreover, the local density of states around Zn atoms shows little change inside the c-f hybridization gap, which is consistent with calculations for a periodic Anderson model without local magnetic order. These results indicate that no nonsuperconducting region is induced around a Zn impurity and do not support the scenario of antiferromagnetic droplet formation suggested by indirect measurements in Cd-doped CeCoIn5. These results also highlight a significant difference of the impurity effect between cuprates and CeCoIn5, in both of which d-wave superconductivity arises from the non-Fermi liquid normal state near antiferromagnetic instabilities.

  6. Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Li, Yan Tao [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); School of Material Science and Engineering, Henan University of Technology, Zhengzhou 454052 (China); Hu, Chu Xiong [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2015-09-15

    Highlights: • CdS/silicon nanoporous pillar array (CdS/Si-NPA) was prepared by a CBD method. • The PL spectrum of CdS/Si-NPA was measured at different temperatures, from 10 to 300 K. • The PL spectrum was composed of four emission bands, obeying different mechanisms. • The PL degradation with temperature was due to phonon-induced escape of carriers. - Abstract: Si-based cadmium sulfide (CdS) is a prospective semiconductor system in constructing optoelectronic nanodevices, and this makes the study on the factors which may affect its optical and electrical properties be of special importance. Here we report that CdS thin film was grown on Si nanoporous pillar array (Si-NPA) by a chemical bath deposition method, and the luminescent properties of CdS/Si-NPA as well as its mechanism were studied by measuring and analyzing its temperature-dependent photoluminescence (PL) spectrum. The low-temperature measurement disclosed that the PL spectrum of CdS/Si-NPA could be decomposed into four emission bands, a blue band, a green band, a red band and an infrared band. The blue band was due to the luminescence from Si-NPA substrate, and the others originate from the CdS thin film. With temperature increasing, the peak energy, PL intensity and peak profile shape for the PL bands from CdS evolves differently. Through theoretical and fitting analyses, the origins of the green, red and infrared band are attributed to the near band-edge emission, the radiative recombination from surface defects to Cd vacancies and those to S interstitials, respectively. The cause of PL degradation is due to the thermal quenching process, a phonon-induced electron escape but with different activation energies. These results might provide useful information for optimizing the preparing parameters to promote the performance of Si-based CdS optoelectronic devices.

  7. Influence of deposition temperature on the structural and morphological properties of Be3N2 thin films grown by reactive laser ablation

    International Nuclear Information System (INIS)

    Chale-Lara, F.; Farias, M.H.; De la Cruz, W.; Zapata-Torres, M.

    2010-01-01

    Be 3 N 2 thin films have been grown on Si(1 1 1) substrates using the pulsed laser deposition method at different substrate temperatures: room temperature (RT), 200 deg. C, 400 deg. C, 600 deg. C and 700 deg. C. Additionally, two samples were deposited at RT and were annealed after deposition in situ at 600 deg. C and 700 deg. C. In order to obtain the stoichiometry of the samples, they have been characterized in situ by X-ray photoelectron (XPS) and reflection electron energy loss spectroscopy (REELS). The influence of the substrate temperature on the morphological and structural properties of the films was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that all prepared films presented the Be 3 N 2 stoichiometry. Formation of whiskers with diameters of 100-200 nm appears at the surface of the films prepared with a substrate temperature of 600 deg. C or 700 deg. C. However, the samples grown at RT and annealed at 600 deg. C or 700 deg. C do not show whiskers on the surface. The average root mean square (RMS) roughness and the average grain size of the samples grown with respect the substrate temperature is presented. The films grown with a substrate temperature between the room temperature to 400 deg. C, and the sample annealed in situ at 600 deg. C were amorphous; while the αBe 3 N 2 phase was presented on the samples with a substrate temperature of 600 deg. C, 700 deg. C and that deposited with the substrate at RT and annealed in situ at 700 deg. C.

  8. Influence of deposition temperature on the structural and morphological properties of Be{sub 3}N{sub 2} thin films grown by reactive laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Chale-Lara, F., E-mail: fabio_chale@yahoo.com.mx [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Apartado Postal 2681, Ensenada, Baja California, C.P. 22860 (Mexico); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 14, Ensenada CP 22860, Baja California (Mexico); Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada-IPN, Unidad Altamira, Km. 14.5 Carretera Tampico-Puerto Industrial, Altamira, Tamaulipas (Mexico); Farias, M.H.; De la Cruz, W. [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 14, Ensenada CP 22860, Baja California (Mexico); Zapata-Torres, M. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada-IPN, Legaria 694, Col. Irrigacion, Del. Miguel Hidalgo, Mexico D.F. (Mexico)

    2010-10-01

    Be{sub 3}N{sub 2} thin films have been grown on Si(1 1 1) substrates using the pulsed laser deposition method at different substrate temperatures: room temperature (RT), 200 deg. C, 400 deg. C, 600 deg. C and 700 deg. C. Additionally, two samples were deposited at RT and were annealed after deposition in situ at 600 deg. C and 700 deg. C. In order to obtain the stoichiometry of the samples, they have been characterized in situ by X-ray photoelectron (XPS) and reflection electron energy loss spectroscopy (REELS). The influence of the substrate temperature on the morphological and structural properties of the films was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that all prepared films presented the Be{sub 3}N{sub 2} stoichiometry. Formation of whiskers with diameters of 100-200 nm appears at the surface of the films prepared with a substrate temperature of 600 deg. C or 700 deg. C. However, the samples grown at RT and annealed at 600 deg. C or 700 deg. C do not show whiskers on the surface. The average root mean square (RMS) roughness and the average grain size of the samples grown with respect the substrate temperature is presented. The films grown with a substrate temperature between the room temperature to 400 deg. C, and the sample annealed in situ at 600 deg. C were amorphous; while the {alpha}Be{sub 3}N{sub 2} phase was presented on the samples with a substrate temperature of 600 deg. C, 700 deg. C and that deposited with the substrate at RT and annealed in situ at 700 deg. C.

  9. Comparative study of structural and electro-optical properties of ZnO:Ga films grown by steered cathodic arc plasma evaporation and sputtering on plastic and their application on polymer-based organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Chih-Hao, E-mail: dataman888@hotmail.com [R& D Division, Walsin Technology Corporation, Kaohsiung, Taiwan (China); Hsiao, Yu-Jen [National Nano Device Laboratories, National Applied Research Laboratories, Tainan, Taiwan (China); Hwang, Weng-Sing [Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan (China)

    2016-08-01

    Ga-doped ZnO (GZO) films with various thicknesses (105–490 nm) were deposited on PET substrates at a low temperature of 90 °C by a steered cathodic arc plasma evaporation (steered CAPE), and a GZO film with a thickness of 400 nm was deposited at 90 °C by a magnetron sputtering (MS) for comparison. The comparative analysis of the microstructure, residual stress, surface morphology, electrical and optical properties, chemical states, and doping efficiency of the films produced by the steered CAPE and MS processes was performed, and the effect of thickness on the CAPE-grown GZO films was investigated in detail. The results showed that the GZO films grown by steered CAPE exhibited higher crystallinity and lower internal stress than those deposited by MS. The transmittance and electrical properties were also enhanced for the steered CAPE-grown films. The figure of merit (Φ = T{sup 10}/R{sub s}, where T is the transmittance and R{sub s} is the sheet resistance in Ω/□). was used to evaluate the performance of the electro-optical properties. The GZO films with a thickness of 400 nm deposited by CAPE had the highest Φ value, 1.94 × 10{sup −2} Ω{sup −1}, a corresponding average visible transmittance of 88.8% and resistivity of 6.29 × 10{sup −4} Ω·cm. In contrast, the Φ value of MS-deposited GZO film with a thickness of 400 nm is only 1.1 × 10{sup −3} Ω{sup −1}. This can be attributed to the increase in crystalline size, [0001] preferred orientation, decrease in stacking faults density and Ar contamination in steered CAPE-grown films, leading to increases in the Hall mobility and carrier density. In addition, the power conversion efficiency (PCE) of organic solar cells was significantly improved by using the CAPE-grown GZO electrode, and the PCE values were 1.2% and 1.7% for the devices with MS-grown and CAPE-grown GZO electrodes, respectively. - Highlights: • ZnO:Ga (GZO) films were grown on PET by steered cathodic arc plasma evaporation (CAPE

  10. Highly efficient hydrogen evolution reaction using crystalline layered three-dimensional molybdenum disulfides grown on graphene film.

    Energy Technology Data Exchange (ETDEWEB)

    Behranginia, Amirhossein; Asadi, Mohammad; Liu, Cong; Yasaei, Poya; Kumar, Bijandra; Phillips, Patrick; Foroozan, Tara; Waranius, Joseph C.; Kim, Kibum; Abiade, Jeremiah; Klie, Robert F.; Curtiss, Larry A.; Salehi-Khojin, Amin

    2016-01-26

    Electrochemistry is central to applications in the field of energy storage and generation. However, it has advanced far more slowly over the last two decades, mainly because of a lack of suitable and affordable catalysts. Here, we report the synthesis of highly crystalline layered three-dimensional (3D) molybdenum disulfide (MoS2) catalysts with bare Mo-edge atoms and demonstrate their remarkable performance for the hydrogen evolution reaction (HER). We found that Mo-edge-terminated 3D MoS2 directly grown on graphene film exhibits a remarkable exchange current density (18.2 mu A cm(-2)) and turnover frequency (>4 S-1) for HER. The obtained exchange current density is 15.2 and 2.3 times higher than that of MoS2/graphene and MoS2/Au catalysts, respectively, both with sulfided Mo-edge atoms. An easily scalable and robust growth process on a wide variety of substrates, along with prolonged stability, suggests that this material is a promising catalyst in energy-related applications.

  11. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Science.gov (United States)

    Catena, Alberto; McJunkin, Thomas; Agnello, Simonpietro; Gelardi, Franco M.; Wehner, Stefan; Fischer, Christian B.

    2015-08-01

    Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  12. Study of the optical properties and structure of ZnSe/ZnO thin films grown by MOCVD with varying thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Jabri, S., E-mail: slaheddine.jabri@fst.rnu.tn [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia); Amiri, G.; Sallet, V. [Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, Université Paris-Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex (France); Souissi, A. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammammlif 2050 (Tunisia); Meftah, A. [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia); Galtier, P. [Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, Université Paris-Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex (France); Oueslati, M. [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia)

    2016-05-15

    ZnSe layers were grown on ZnO substrates by the metal organic chemical vapor deposition technique. A new structure appeared at lower thicknesses films. The structural properties of the thin films were studied by the X-ray diffraction (XRD) and Raman spectroscopy methods. First, Raman selection rules are explicitly put forward from a theoretical viewpoint. Second, experimentally-retrieved-intensities of the Raman signal as a function of polarization angle of incident light are fitted to the obtained theoretical dependencies in order to confirm the crystallographic planes of zinc blend ZnSe thin film, and correlate with DRX measurements. Raman spectroscopy has been used to characterize the interfacial disorder that affects energy transport phenomena at ZnSe/ZnO interfaces and the Photoluminescence (PL) near the band edge of ZnSe thin films.

  13. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, José H. D. da [Universidade Estadual Paulista, UNESP, Bauru, São Paulo 17033-360 (Brazil); Leite, Douglas M. G. [Universidade Federal de Itajubá, UNIFEI, Itajubá, Minas Gerais 37500-903 (Brazil); Bortoleto, José R. R. [Universidade Estadual Paulista, UNESP, Sorocaba, São Paulo 18087-180 (Brazil)

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 °C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 °C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 °C, 30 W and 600 °C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  14. Domain structure and magnetic properties of epitaxial SrRuO sub 3 films grown on SrTiO sub 3 (100) substrates by ion beam sputtering

    CERN Document Server

    Oh, S H

    2000-01-01

    The domain structure of epitaxial SrRuO sub 3 thin films grown on SrTiO sub 3 (100) substrates by using ion beam sputtering has been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). The SrRuO sub 3 films grown in the present study revealed a unique cube-on-cube epitaxial relationship, i.e., (100) sub S sub R sub O ll (100) sub S sub T sub O , [010] sub S sub R sub O ll [101] sub S sub T sub O , prevailing with a cubic single-domain structure. The cubic SrRuO sub 3 thin films that were inherently with free from RuO sub 6 octahedron tilting exhibited higher resistivity with suppressed magnetic properties. The Curie temperature of the thin films was suppressed by 60 K from 160 K for the bulk specimen, and the saturation magnetic moment was reduced by a significant amount. The tetragonal distortion of the SrRuO sub 3 thin films due to coherent growth with the substrate seemed to result in a strong magnetic anisotropy.

  15. (119) Bi-2223 thin films grown by MOCVD on (100) NdGaO3 and (110) SrTiO3

    Science.gov (United States)

    Endo, Kazuhiro; Badica, P.

    2002-11-01

    In high temperature superconductors (HTS) the coherence length along non-c axis directions is longer. This feature can be useful wh en designing electronics devices based on HTS. Therefore growth and characterization of non-c axis oriented thin HTS films is of great interest. In this paper we present a short review of our data regarding (119) Bi-2223 thin films grown by MOCVD on (100) NdGaO3 and (110) SrTiO3. The emphasis is made on improvement and control of the quality of the films by the "two-temperature" technological approach and/or use of the vicinal substrates. Phase and morphology evolution for different processing conditions, substrate's type and off-angle are presented. The highest critical temperatures of Tc0=67.2 K and Tc0=74 K for the "single" and "two-"temperature routes were obtained on vicinal SrTiO3 with the off-angle of 20°. A higher off-angle promoted the formation of a specific step-like morphology with lower roughness. For the films grown on flat substrates the morphology was of mountain-range shape. Surface morphology as a result of two types of growth mechanisms (two-dimensional (2D), assisted by a so-called "twin"-growth and step-flow growth) for the (119)Bi-2223 filmes are discussed.

  16. EFFECTS OF METHANE GAS FLOW RATE ON THE OPTOELECTRICAL PROPERTIES OF NITROGENATED CARBON THIN FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

    OpenAIRE

    M. RUSOP; S. ABDULLAH; A. M. M. OMER; S. ADHIKARI; T. SOGA; T. JIMBO; M. UMENO

    2006-01-01

    We have studied the influence of the methane gas (CH4) flow rate on the composition and structural and electrical properties of nitrogenated amorphous carbon (a-C:N) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Auger electron spectroscopy, X-ray photoelectron spectroscopy, UV-visible spectroscopy, four-point probe and two-probe method resistance measurement. The photoelectrical properties of a-C:N films were also studied. We have succeeded to grow a-...

  17. Spectroscopic evidence of the formation of (V,Ti)O2 solid solution in VO2 thinner films grown on TiO2(001) substrates

    Science.gov (United States)

    Muraoka, Y.; Saeki, K.; Eguchi, R.; Wakita, T.; Hirai, M.; Yokoya, T.; Shin, S.

    2011-02-01

    We have prepared VO2 thin films epitaxially grown on TiO2(001) substrates with thickness systematically varied from 2.5 to 13 nm using a pulsed laser deposition method, and studied the transport property and electronic states of the films by means of resistivity and in situ synchrotron photoemission spectroscopy (SRPES). In resistivity measurements, the 13-nm-thick film exhibits a metal-insulator transition at around 290 K on cooling with change of three orders of magnitudes in resistivity. As the film thickness decreases, the metal-insulator transition broadens and the transition temperature increases. Below 4 nm, the films do not show the transition and become insulators. In situ SRPES measurements of near the Fermi level valence band find that the electronic state of the 2.5-nm-thick film is different than that of the temperature-induced insulator phase of VO2 itself although these two states are insulating. Ti 2p core-level photoemission measurements reveal that Ti ions exist near the interface between the films and TiO2 substrates, with a chemical state similar to that in (V,Ti)O2 solid solution. These results indicate that insulating (V,Ti)O2 solid solution is formed in the thinner films. We propose a simple growth model of a VO2 thin film on a TiO2(001) substrate. Near the interface, insulating (V,Ti)O2 solid solution is formed due to the diffusion of Ti ions from the TiO2 substrate into the VO2 film. The concentration of Ti in (V,Ti)O2 is relatively high near the interface and decreases toward the surface of the film. Beyond a certain film thickness (about 7 nm in the case of the present 13-nm-thick film), the VO2 thin film without any Ti ions starts to grow. Our work suggests that developing a technique for preparing the sharp interface between the VO2 thin films and TiO2 substrates is a key issue to study the physical property of an ultrathin film of "pure" VO2, especially to examine the presence of the novel electronic state called a semi-Dirac point

  18. Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

    Science.gov (United States)

    Lebedev, A. A.; Davydov, V. Y.; Usachov, D. Y.; Lebedev, S. P.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; Alekseev, P. A.; Dunaevskiy, M. S.; Rybkin, A. G.; Novikov, S. N.; Makarov, Yu N.

    2018-01-01

    The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, X-ray photoelectron spectroscopy and angle-resolved photoemission. It was demonstrated the possibility of fabrication of the gas and biosensors that is based on grown graphene films. The gas sensors are sufficiently sensitive to NO2 at low concentrations. The biosensor operation was checked using an immunochemical system comprising fluorescein dye and monoclonal anti fluorescein antibodies. The sensor detects fluorescein concentration on a level of 1–10 ng/mL and bovine serum albumin– fluorescein conjugate on a level of 1–5 ng/mL. The proposed device has good prospects for use for early diagnostics of various diseases.

  19. A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer

    International Nuclear Information System (INIS)

    Putri, W. B. K.; Kang, B.; Ranot, M.; Lee, J. H.; Kang, W. N.

    2014-01-01

    We have grown MgB 2 on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and 600 degrees C by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, MgB 2 films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the MgB 2 films on SiC/Hastelloy deposited at 500 and 600 degrees C. From the surface analysis, smaller and denser grains of MgB 2 tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of MgB 2 tapes.

  20. IR emission and electrical conductivity of Nd/Nb-codoped TiO{sub x} (1.5 < x < 2) thin films grown by pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tchiffo-Tameko, C.; Cachoncinlle, C. [GREMI, UMR 7344 CNRS-Université Orléans, 45067 Orléans Cedex 2 (France); Perriere, J. [Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP, 75005 Paris (France); CNRS, UMR 7588, INSP, 75005 Paris (France); Nistor, M. [NILPRP, L 22 P.O. Box MG-36, 77125 Bucharest-Magurele (Romania); Petit, A.; Aubry, O. [GREMI, UMR 7344 CNRS-Université Orléans, 45067 Orléans Cedex 2 (France); Pérez Casero, R. [Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Millon, E., E-mail: eric.millon@univ-orleans.fr [GREMI, UMR 7344 CNRS-Université Orléans, 45067 Orléans Cedex 2 (France)

    2016-12-15

    Highlights: • Nd/Nb-codoped TiO{sub 2} PLD films are electrically insulating and transparent in the UV visible NIR spectral domain. • Nd/Nb-codoped oxygen deficient TiO{sub x} (x ≈ 1.5) films are conductive and absorbent. • IR emission of Nd{sup 3+} in codoped TiO{sub x} films is quenched due to oxygen deficiency. • High Nb-doping rate decreases the IR emission of Nd{sup 3+} in Nd/Nb-codoped TiO{sub 2} films. - Abstract: The effect of the co-doping with Nd and Nb on electrical and optical properties of TiO{sub x} films is reported. The role of oxygen vacancies on the physical properties is also evidenced. The films are grown by pulsed-laser deposition onto (001) sapphire and (100) silicon substrates. The substrate temperature was fixed at 700 °C. To obtain either stoichiometric (TiO{sub 2}) or highly oxygen deficient (TiO{sub x} with x < 1.6) thin films, the oxygen partial pressure was adjusted at 10{sup −1} and 10{sup −6} mbar, respectively. 1%Nd-1%Nb, 1%Nd-5%Nb and 5%Nd-1%Nb co-doped TiO{sub 2} were used as bulk ceramic target. Composition, structural and morphological properties of films determined by Rutherford backscattering spectroscopy, X-ray diffraction and scanning electron microscopy, are correlated to their optical (UV–vis transmission and photoluminescence) and electrical properties (resistivity at room temperature). The most intense Nd{sup 3+} emission in the IR domain is obtained for stoichiometric films. Codoping Nd-TiO{sub x} films by Nb{sup 5+} ions is found to decrease the photoluminescence efficiency. The oxygen pressure during the growth allows to tune the optical and electrical properties: insulating and highly transparent (80% in the visible range) Nd/Nb codoped TiO{sub 2} films are obtained at high oxygen pressure, while conductive and absorbent films are grown under low oxygen pressure (10{sup −6} mbar).

  1. A potentiostatic and galvanostatic study of the selective dissolution of Cd/Pb eutectic alloy

    International Nuclear Information System (INIS)

    Sokharev, N.P.; Rabdel, A.A.; Zhadanov, V.V.

    1986-01-01

    The authors consider the selective dissolution (SD) of the electronegative component of a two-phase, eutectic alloy (Cd/Pb) under galvanostatic conditions. Treating this process as the extraction of a solid substance from a porous matrix, the distribution of the concentration of EC ions, c(x, t), can be described by a differential equation (presented). Experimental data are presented in two equations which are applicable for the description of the selective dissolution process of the electronegative component of a eutectic alloy under conditions of concentration polarization

  2. A study on the sensing of NO(sub2) and O(sub2) utilizing ZnO films grown by aerosol spray pyrolysis

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2015-07-01

    Full Text Available Chemistry and Physics 162 (2015) 628e639 A study on the sensing of NO2 and O2 utilizing ZnO films grown by aerosol spray pyrolysis G.H. Mhlongo a, *, D.E. Motaung a, I. Kortidis b, N.R. Mathe a, O.M. Ntwaeaborwa c, H.C. Swart c, B.W. Mwakikunga a, S...

  3. Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001)

    International Nuclear Information System (INIS)

    Woicik, J.C.; Gupta, J.A.; Watkins, S.P.; Crozier, E.D.

    1998-01-01

    The bond lengths in a series of strained, buried Ga 1-x In x As thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.copyright 1998 American Institute of Physics

  4. Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

    KAUST Repository

    Yao, Yingbang

    2012-06-01

    (001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

  5. Angle-resolved photoemission spectroscopy for VO{sub 2} thin films grown on TiO{sub 2} (0 0 1) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Muraoka, Y., E-mail: ymuraoka@cc.okayama-u.ac.j [Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530 (Japan); Faculty of Science, Research Laboratory for Surface Science, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530 (Japan); Saeki, K.; Yao, Y. [Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530 (Japan); Wakita, T. [Faculty of Science, Research Laboratory for Surface Science, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530 (Japan); Hirai, M.; Yokoya, T. [Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530 (Japan); Faculty of Science, Research Laboratory for Surface Science, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530 (Japan); Eguchi, R.; Shin, S. [RIKEN/SPring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5148 (Japan)

    2010-08-15

    We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO{sub 2} thin films. The VO{sub 2} thin films have been grown on TiO{sub 2} (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3-8 eV along the {Gamma}-Z direction. The periodicity of the dispersive band is found to be 2.2 A{sup -1} which is almost identical with the periodicity expected from the c-axis length of the VO{sub 2} thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO{sub 2} thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO{sub 2}.

  6. Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

    International Nuclear Information System (INIS)

    Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

    2011-01-01

    In this study, (011)-highly oriented Sr, Nb co-doped BiFeO 3 (BFO) thin films were successfully grown on SrRuO 3 /Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of ≅5.3 nm and average grain sizes of ≅65-70 nm for samples with different thicknesses. Remanent polarization values (2P r ) of 54 μC cm -2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe 3+ /Fe 2+ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO 3 /Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

  7. Electrical, optical, and structural properties of thin films with tri-layers of AZO/ZnMgO/AZO grown by filtered vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gontijo, Leonardo C. [Instituto Federal do Espirito Santo, Programa de Pos-Graduacao em Engenharia Metalurgica e de Materiais, CEP 29444-030 Vitoria, ES (Brazil); Cunha, Alfredo G. [Universidade Federal do Espirito Santo, Departamento de Fisica, CEP 29075-910 Vitoria, ES (Brazil); Nascente, Pedro A.P., E-mail: nascente@ufscar.br [Universidade Federal de Sao Carlos, Departamento de Engenharia de Materiais, CEP 13565-905 Sao Carlos, SP (Brazil)

    2012-12-01

    Highlights: Black-Right-Pointing-Pointer AZO/ZnMgO/AZO tri-layered films were grown by FCAD filtered cathodic arc deposition. Black-Right-Pointing-Pointer The films were highly transparent and presented excellent electrical resistivity. Black-Right-Pointing-Pointer The films presented optical transmittance in the visible light higher than 80%. - Abstract: Transparent conductive oxides (TCO) are indispensable as front electrode for most of thin film electronic devices such as transparent electrodes for flat panel displays, photovoltaic cells, windshield defrosters, transparent thin film transistors, and low emissivity windows. Thin films of aluminum-doped zinc oxide (AZO) have shown to be one of the most promising TCOs. In this study, three layered Al-doped ZnO (AZO)/ZnMgO/AZO heterostructures were prepared by filtered cathodic arc deposition (FCAD) on glass substrates. The objective is to find a set of parameters that will allow for improved optical and electrical properties of the films such as low resistivity, high mobility, high number of charge carriers, and high transmittance. We have investigated the effect of modifications in thickness and doping of the ZnMgO inner layer on the structural, electrical, and optical characteristics of the stacked heterostructures.

  8. c-Axis correlated extended defects and critical current in YBa2Cu3Ox films grown on Au and Ag-nano dot decorated substrates

    International Nuclear Information System (INIS)

    Mikheenko, P.; Sarkar, A.; Dang, V.-S.; Tanner, J.L.; Abell, J.S.; Crisan, A.

    2009-01-01

    We report measurements of critical current in YBa 2 Cu 3 O x films deposited on SrTiO 3 substrates decorated with silver and gold nanodots. An increase in critical current in these films, in comparison with the films deposited on non-decorated substrates, has been achieved. We argue that this increase comes from the c-axis correlated extended defects formed in the films and originated from the nanodots. Additionally to creating extended defects, the nanodots pin them and prevent their exit from the sample during the film growth, thus keeping a high density of defects and providing a lower rate of decrease of the critical current with the thickness of the films. The best pinning is achieved in the samples with silver nanodots by optimising their deposition temperature. The nanodots grown at a temperature of a few hundred deg. C have a small diameter of a few nanometres and a high surface density of 10 11 -10 12 particles/cm 2 . We give evidence of c-axis correlated extended defects in YBa 2 Cu 3 O x films by planar and cross-sectional atomic force microscopy, transmission electron microscopy and angle-dependent transport measurements of critical current.

  9. Depth profiling of transport properties of in-situ grown YBa_2Cu_3O_7-x films for coated conductor applications

    Science.gov (United States)

    Jo, William; Huh, J.-U.; Hammond, R. H.; Beasley, M. R.

    2003-03-01

    We report depth profiling of the local critical current density and resistivity of YBa_2Cu_3O_7-x (YBCO) films grown by in-situ electron beam evaporation. The method provides important information on the uniformity of the films, and therefore on the commonly observed property that the critical currents of coated conductor high temperature superconductor films do not scale linearly with thickness. Using a methodology of layer-by-layer etching, depth profiling of critical currents and resistivity of the films has been achieved. We use a Bromine methanol mixture to etch down YBCO films with an etch rate of 60 nm/min. At each step, we also observe surface morphology using high resolution scanning electron microscopy. In this talk, we report further study of the results found earlier that YBCO films deposited at high rates are composed of an upper layer of defected YBCO with a local Jc of 5 - 7 MA/cm^2 and a lower more perfect layer with no critical current capacity. The information derived may be useful in the characterization and optimization of superconducting thin films for electrical power and other applications.

  10. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO2 thin films grown by atomic layer deposition at different temperatures

    Science.gov (United States)

    Saha, D.; Ajimsha, R. S.; Rajiv, K.; Mukherjee, C.; Gupta, M.; Misra, P.; Kukreja, L. M.

    2014-10-01

    TiO2 thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (Ts) in a wide range (50 °C ≤ Ts ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (Ts ≤ 150 °C) to the nanocrystalline films (2500 < Ts ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple-DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  11. Large critical current densities and pinning forces in CSD-grown superconducting GdBa2Cu3O7-x -BaHfO3 nanocomposite films

    Science.gov (United States)

    Cayado, Pablo; Erbe, Manuela; Kauffmann-Weiss, Sandra; Bühler, Carl; Jung, Alexandra; Hänisch, Jens; Holzapfel, Bernhard

    2017-09-01

    GdBa2Cu3O7-x -BaHfO3 (GdBCO-BHO) nanocomposite (NC) films containing 12 mol% BHO nanoparticles were prepared by chemical solution deposition (CSD) following the TFA route on SrTiO3 (STO) single crystals and buffered metallic tapes supplied by two different companies: Deutsche Nanoschicht GmbH and SuperOx. We optimized the preparation of our GdBCO-BHO solutions with acetylacetone making the film synthesis very robust and reproducible, and obtained 220 nm films with excellent superconducting properties. We show the structural, morphological and superconducting properties of the films after a careful optimization of the processing parameters (growth temperature, oxygen partial pressure and heating ramp). The films reach critical temperatures (T c) of ˜94 K, self-field critical current densities (J c) of >7 MA cm- 2 and maximum pinning force densities (F p) of ˜16 GN m- 3 at 77 K on STO and T c of ˜94.5 K and J c > 1.5 MA cm- 2 on buffered metallic tapes. The transport properties under applied magnetic fields are significantly improved with respect to the pristine GdBCO films. The GdBCO-BHO NC films on STO present epitaxial c-axis orientation with excellent out-of-plane and in-plane texture. The films are, in general, very dense with a low amount of pores and only superficial indentations. On the other hand, we present, for the first time, a systematic study of CSD-grown GdBCO-BHO NC films on buffered metallic tapes. We have used the optimized growth conditions for STO as a reference and identified some limitations on the film synthesis that should be overcome for further improvement of the films’ superconducting properties.

  12. Structural, electrical and optical properties of indium tin oxide thin film grown by metal organic chemical vapor deposition with tetramethyltin-precursor

    Science.gov (United States)

    Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Wang, Gang

    2018-01-01

    Tin-doped indium oxide (ITO) is grown by metal organic chemical vapor deposition (MOCVD) using tetramethyltin (TDMASn) as tin precursor. The as-grown ITO films are polycrystalline with (111) and (100) textures. A gradual transition of crystallographic orientation from (111) preferred to (100) preferred is observed as the composition of tin changes. By precisely controlling the Sn doping, the ITO thin films present promising optical and electrical performances at either near-infrared-visible or visible-near-ultraviolet ranges. At low Sn doping level, the as-grown ITO possesses high electron mobility of 48.8 cm2 V‑1 s‑1, which results in high near-infrared transmittance and low resistivity. At higher Sn doping level, high carrier concentration (8.9 × 1020 cm‑3) and low resistivity (3 × 10‑4 Ω cm) are achieved. The transmittance is 97.8, 99.1, and 82.3% at the wavelength of 550, 365, and 320 nm, respectively. The results strongly suggest that MOCVD with TDMASn as tin precursor is an effective method to fabricate high quality ITO thin film for near-infrared, visible light, and near-ultraviolet application.

  13. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  14. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

    2018-01-01

    We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

  15. Thickness dependence of magnetic anisotropy and domains in amorphous Co{sub 40}Fe{sub 40}B{sub 20} thin films grown on PET flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhenhua, E-mail: tangzhenhua1988@163.com [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Ni, Hao [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); College of science, China university of petroleum, Qingdao, Shandong 266580 China (China); Lu, Biao [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Zheng, Ming [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Huang, Yong-An [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Lu, Sheng-Guo, E-mail: sglu@gdut.edu.cn [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Tang, Minghua [Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China); Gao, Ju [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)

    2017-03-15

    The amorphous Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) films (5–200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film. - Graphical abstract: The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. - Highlights: • The thickness effect on the magnetic properties in amorphous CoFeB thin films grown on flexible substrates was investigated. • The in-plane uniaxial magnetic anisotropy induced by strains was observed. • A critical thickness of ~ 150 nm for the flexible CoFeB thin film on PET substrate was obtained.

  16. Data storage applications based on LiCoO{sub 2} thin films grown on Al{sub 2}O{sub 3} and Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Svoukis, E., E-mail: svoukis.efthymios@ucy.ac.cy [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus); Mihailescu, C.N. [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus); National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, P.O. Box MG-36, 077125 Magurele (Romania); Mai, V.H. [CEA, LIST, 91191 Gif sur Yvette Cedex (France); Schneegans, O. [Laboratoire Génie Electrique et Electronique de Paris, UMR 8507 of CNRS, UPMC and Paris-Sud Universities, Supélec, 91192 Gif sur Yvette Cedex (France); Breza, K.; Lioutas, C. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Giapintzakis, J., E-mail: giapintz@ucy.ac.cy [Nanotechnology Research Unit & Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., 1678 Nicosia (Cyprus)

    2016-09-15

    Highlights: • LiCoO{sub 2} thin films are shown to be potential candidates for data storage applications. • High quality LiCoO{sub 2} thin films have been grown by PLD on (0 0 0 1) Al{sub 2}O{sub 3} and (111) Si substrates. • Epitaxial relations have been determined for LiCoO{sub 2}/Al{sub 2}O{sub 3} with high resolution X-ray diffraction (in-plane and out-of-plane configurations). • Surface resistance modification have been obtained by the application of an external bias voltage. • A mechanism for the surface resistance modifications is presented. - Abstract: In this study, LiCoO{sub 2} thin films were investigated for data storage applications based on scanning probe mediated approaches. LiCoO{sub 2}, compared to other materials proposed for scanning probe mediated nanoscale patterning, is highly stable and exhibits reversible electrochemical surface modifications. LiCoO{sub 2} thin films have been grown by pulsed laser deposition on Al{sub 2}O{sub 3} and Si substrates over a range of deposition temperatures. The crystal structure and the microstructure of the films has been inferred through in- and out-of-plane X-ray diffraction studies and high-resolution transmission electron microscopy, respectively. The influence of the film deposition temperature on the surface electrical properties of the LiCoO{sub 2} films is discussed along with the relevant mechanism of surface resistance modification.

  17. Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Sankaran, Kamatchi J.; Haenen, Ken [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Ryl, Jacek; Darowicki, Kazimierz [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Bogdanowicz, Robert [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Lin, I-Nan [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

    2016-06-13

    The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

  18. Thick Bi2Sr2CaCu2O8+δ films grown by liquid-phase epitaxy for Josephson THz applications

    Science.gov (United States)

    Simsek, Y.; Vlasko-Vlasov, V.; Koshelev, A. E.; Benseman, T.; Hao, Y.; Kesgin, I.; Claus, H.; Pearson, J.; Kwok, W.-K.; Welp, U.

    2018-01-01

    Theoretical and experimental studies of intrinsic Josephson junctions (IJJs) that naturally occur in high-T c superconducting Bi2Sr2CaCu2O8+δ (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation and sensing of electromagnetic radiation in the THz range. Here, we show that the THz-on-a-chip concept may be realized in liquid-phase epitaxial-grown (LPE) thick Bi-2212 films. We have grown μm thick Bi-2212 LPE films on MgO substrates. These films display excellent c-axis alignment and single crystal grains of about 650 × 150 μm2 in size. A branched current-voltage characteristic was clearly observed in c-axis transport, which is a clear signature of underdamped IJJs, and a prerequisite for THz-generation. We discuss LPE growth conditions allowing improvement of the structural quality and superconducting properties of Bi-2212 films for THz applications.

  19. Magnetorefractive effect in the La{sub 1−x}K{sub x}MnO{sub 3} thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sukhorukov, Yu.P., E-mail: suhorukov@imp.uran.ru [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); Telegin, A.V. [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); Bessonov, V.D. [Institute of Metal Physics, Ural Division of RAS, 620990 Ekaterinburg (Russian Federation); University of Bialystok, 15-424 Bialystok (Poland); Gan’shina, E.A.; Kaul’, A.R.; Korsakov, I.E.; Perov, N.S.; Fetisov, L.Yu. [Faculty of Physics, Moscow State University, Moscow 119991 (Russian Federation); Yurasov, A.N. [Moscow State Technical University of Radioengineering, Electronics and Automation, 119454 Moscow (Russian Federation)

    2014-10-01

    Thin epitaxial La{sub 1−x}K{sub x}MnO{sub 3} films were grown using two-stage procedure. Influence of substitution of La{sup 3+} ions with K{sup +} ions on the optical and electrical properties of La{sub 1−x}K{sub x}MnO{sub 3} films (x=0.05, 0.10, 0.15 i 0.18) has been studied in detail. A noticeable magnetorefractive effect in the films under study was detected in the infrared range. Magnetorefractive effect as well as transverse magneto-optical Kerr effect and magnetoresistance have the maximum in optimally doped sample with x=0.18 corresponding to the highest Curie temperature. The experimental data for compositions close to optimally doped films are in good agreement with the data calculated in the framework of a theory developed for manganites. The resonance-like contribution to magnetoreflection spectra of manganite films has been observed in the vicinity of the phonon bands. It is shown that magnetic and charge inhomogeneities strongly influence on the magneto-optical effects in films. Thin films of La{sub 1−x}K{sub x}MnO{sub 3} with the large values of Kerr and magnetorefractive effect are promising magneto-optical material in the infrared range. - Highlights: • Giant magnetorefractive effect was obtained in La{sub 1−x}K{sub x}MnO{sub 3} films in the infrared. • Inhomogeneity as well as doping level strongly influences the value of magnetorefractive effect. • Resonance-like bands have been observed in the magnetoreflection spectra of the films. • The obtained experimental data can be explained in the framework of the MRE theory.

  20. Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

    Science.gov (United States)

    Lao, Pudong; Tang, Wade C.; Rajkumar, K. C.; Guha, S.; Madhukar, A.; Liu, J. K.; Grunthaner, F. J.

    1990-01-01

    The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

  1. Growth and annealing effect of SrTiO{sub 3} thin films grown by pulsed laser deposition using fourth harmonic Nd:YAG pulsed laser

    Energy Technology Data Exchange (ETDEWEB)

    Takamura, Koji; Fujiwara, Takumi; Yokota, Akinobu; Nakamura, Motonori; Yoshimoto, Ken' ichi [National Institute of Technology, Asahikawa College, 2-2-1-6 Shunkodai, Asahikawa 071-8142 (Japan)

    2017-06-15

    SrTiO{sub 3} homoepitaxial films were grown by pulsed laser deposition (PLD) using a fourth harmonic Nd:YAG pulsed laser. The substrate temperature was kept constant at 600, 700, or 800 C. The laser energy was set at 9-25 mJ on the polycrystal SrTiO{sub 3} target. Post-procedure annealing was performed in the air for 24 h. The X-ray diffraction measurement results showed that the lattice constant of the film was only 0.010 Aa larger than that of the substrate and was not dependent on the annealing temperature. We demonstrated the possibility of growing near-stoichiometric SrTiO{sub 3} film by PLD using an Nd:YAG laser. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

    International Nuclear Information System (INIS)

    Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

    2007-01-01

    The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

  3. Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Isom Hilmi

    2017-05-01

    Full Text Available An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered chalcogenide material with van-der-Waals (vdW epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111 substrates by pulsed laser deposition (PLD. The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.

  4. Effects of temperature and Mo2C layer on stress and structural properties in CVD diamond film grown on Mo foil

    International Nuclear Information System (INIS)

    Long, Fen; Wei, Qiuping; Yu, Z.M.; Luo, Jiaqi; Zhang, Xiongwei; Long, Hangyu; Wu, Xianzhe

    2013-01-01

    Highlights: •Polycrystalline diamond films were grown on Mo foil substrates by HF-CVD. •We investigated the temperature dependence of the film stress for each sample. •We show that how the thermal stress and intrinsic stress affects the total stress. •The stress of Mo foil substrate obtained by XRD was investigated in this study. •The effect of Mo 2 C interface layer for stress of multilayer system was considered. -- Abstract: Polycrystalline diamond films have been prepared by hot-filament-assisted chemical vapor deposition (HFCVD) on Mo foils. The morphology, growth rate, phase composition, element distribution and residual stress of the films at different temperature were investigated by field-emission scanning electron microscopy, Raman spectrum, field emission electron probe microanalysis and X-ray diffraction. Results show that the residual stress of the diamond films is compressive. The thermal stress plays a decisive role in the total stress, while the intrinsic stress can change the trend of the total stress. The residual stress of substrate gradually changes from tensile stress to compressive stress with the increase of the deposited temperature. A Mo 2 C interlayer is formed during deposition process, and this layer has an important influence on the stresses of films and substrates

  5. Physical properties of nanostructured (PbSx(CuS1−x composite thin films grown by successive ionic layer adsorption and reaction method

    Directory of Open Access Journals (Sweden)

    A.U. Ubale

    2016-03-01

    Full Text Available Nanostructured ternary semiconducting (PbSx(CuS1−x thin films were grown on glass substrates by successive ionic layer adsorption and reaction (SILAR technique at room temperature. The structural, morphological and optical characterizations of the films were carried out by X-ray diffraction, scanning electron microscopy and UV–Vis spectrophotometer respectively. The structural studies revealed that, (PbSx(CuS1−x films are nanocrystalline in nature and have mixed phase of cubic PbS and hexagonal CuS. The optical absorption measurements showed that band gap energy of (PbSx(CuS1−x can be engineered between 2.57 and 2.28 eV by varying compositional parameter ‘x’. The room temperature dc dark electrical resistivity of PbS film is found to be 28.85 Ωcm and it decreases when content of Cu in composite increases and becomes 0.05 Ωcm for pure CuS. The thermo-emf measurements showed that the as deposited (PbSx(CuS1−x films are of n-type. The water angle contact measurements of (PbSx(CuS1−x, revealed that, films are hydrophilic in nature and it could be advantageous in electrochemical application.

  6. Anisotropic magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films grown by dc-sputtering

    International Nuclear Information System (INIS)

    Moran, O.; Saldarriaga, W.; Prieto, P.; Baca, E.

    2005-01-01

    We have conducted a comprehensive study of the in-plane/out-of-plane magnetic and magnetotransport properties on (001)-oriented La 2/3 Ca 1/3 MnO 3 films epitaxially grown on single crystal (001)-SrTiO 3 substrates by dc-sputtering at high oxygen pressure. The films grew under tensile strain imposed by the lattice mismatch with the substrate. SQUID magnetometry indicated the presence of magnetocrystalline anisotropy at temperatures below the ferromagnetic Curie temperature T C with the easy plane being the film plane. Resistance measurements in magnetic field strengths of up to 6 T, applied both normal and parallel to the film plane, evidenced a distinctive dependence of the resistivity below T C on the angle of the applied field with respect to the plane of the film. During these measurements, transport current and applied magnetic field was all along maintained perpendicular to each other. Neither low-field magnetoresistance (LFMR) nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain in the first monolayers has been partially released. Additionally, by rotating the sample 360 around an axis parallel to film plane, in magnetic fields ≥2 T, a quadratic sinusoidal dependence of the magnetoresistance (MR) on the polar angle θ was observed. These results can be consistently interpreted in frame of a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  8. Growth and characterization of textured YBaCo2O5+δ thin films grown on (001)-SrTiO3 via DC magnetron sputtering

    International Nuclear Information System (INIS)

    Galeano, V.; Arnache, O.; Supelano, I.; Vargas, C.A. Parra; Morán, O.

    2016-01-01

    Thin films of the layered cobaltite YBaCo 2 O 5+δ were successfully grown on (001)-oriented SrTiO 3 single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo 2 O 5+δ thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo 2 O 5+δ , the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo 2 O 5+δ thin films are grown on SrTiO 3 substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

  9. Influence of La and Mn vacancies on the electronic and magnetic properties of LaMnO3 thin films grown by pulsed laser deposition

    Science.gov (United States)

    Marozau, Ivan; Das, Proloy T.; Döbeli, Max; Storey, James G.; Uribe-Laverde, Miguel A.; Das, Saikat; Wang, Chennan; Rössle, Matthias; Bernhard, Christian

    2014-05-01

    With pulsed laser deposition, we have grown c axis oriented thin films of the nominal composition LaMnO3 (LMO) on LSAT(001) substrates. We find that, depending on the oxygen background pressure during growth, the LMO films contain sizeable amounts of La and/or Mn vacancies that strongly influence their electronic and magnetic properties. Specifically, we show that the Mn/La ratio can be systematically varied from 0.92 at 0.11 mbar to 1.09 at 0.30 mbar of oxygen. The cationic vacancies have markedly different effects that become most pronounced once the samples are fully oxygenated and thus strongly hole doped. All as-grown and thus slightly oxygen-deficient LMO films are ferromagnetic insulators with saturation moments in excess of 2.5 μB per Mn ion, their transport and optical properties can be understood in terms of trapped ferromagnetic polarons. Upon oxygen annealing, the most La-deficient films develop a metallic response with an even larger ferromagnetic saturation moment of 3.8 μB per Mn ion. In contrast, in the oxygenated Mn-deficient films, the ferromagnetic order is strongly suppressed to less than 0.5 μB per Mn ion, and the transport remains insulatorlike. We compare our results with the ones that were previously obtained on bulk samples and present an interpretation in terms of the much stronger disruption of the electronic and magnetic structure by the Mn vacancies as compared to the La vacancies. We also discuss the implications for the growth of LMO thin films with well-defined physical properties that are a prerequisite for the study of interface effects in multilayers.

  10. Effect of annealing temperature on surface morphology and ultralow ferromagnetic resonance linewidth of yttrium iron garnet thin film grown by rf sputtering

    Science.gov (United States)

    Cao Van, Phuoc; Surabhi, Srivathsava; Dongquoc, Viet; Kuchi, Rambabu; Yoon, Soon-Gil; Jeong, Jong-Ryul

    2018-03-01

    We report high-quality yttrium-iron-garnet (YIG; Y3Fe5O12) ultrathin films grown on {111} gadolinium-gallium-garnet (GGG; Gd3Ga5O12) substrates using RF sputtering deposition on an off-stoichiometric target and optimized thermal treatments. We measured a narrow peak-to-peak ferromagnetic resonance linewidth (ΔH) whose minimum value was 1.9 Oe at 9.43 GHz for a 60-nm-thick YIG film. This value is comparable to the most recently published value for a YIG thin film grown by pulsed laser deposition. The temperature dependence of the ΔH was investigated systematically, the optimal annealing condition for our growing condition was 875 °C. Structural analysis revealed that surface roughness and crystallinity played an important role in the observed ΔH broadening. Furthermore, the thickness dependence of the ΔH, which indicated that 60 nm thickness was optimal to obtain narrow ΔH YIG films, was also investigated. The thickness dependence of ΔH was understood on the basis of contributions of surface-associated magnon scattering and magnetic inhomogeneities to the ΔH broadening. Other techniques such as transmission electron microscopy, scanning electron microscopy, and X-ray diffraction were used to study the crystalline structure of the YIG films. The high quality of the films in terms of their magnetic properties was expressed through a very low coercivity and high saturation magnetization measured using a vibration sample magnetometer.

  11. The influence of oxygen flow rate on properties of SnO{sub 2} thin films grown epitaxially on c-sapphire by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Y.M. [I. Physics Institute, Justus-Liebig University of Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University (China); Key Laboratory of Green Preparation and Application for Functional Materials, Ministry of Education, Hubei University (China); Faculty of Materials Science & Engineering, Hubei University (China); Jiang, J. [I. Physics Institute, Justus-Liebig University of Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Xia, C. [Physical Chemistry Institute, Justus-Liebig University of Giessen, Heinrich-Buff-Ring 58, D-35392 Giessen (Germany); Kramm, B.; Polity, A. [I. Physics Institute, Justus-Liebig University of Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); He, Y.B., E-mail: ybhe@hubu.edu.cn [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University (China); Key Laboratory of Green Preparation and Application for Functional Materials, Ministry of Education, Hubei University (China); Faculty of Materials Science & Engineering, Hubei University (China); Klar, P.J.; Meyer, B.K. [I. Physics Institute, Justus-Liebig University of Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany)

    2015-11-02

    Tin dioxide (SnO{sub 2}) thin films were grown on c-plane sapphire substrates by chemical vapor deposition using SnI{sub 2} and O{sub 2} as reactants. The growth experiments were carried out at a fixed substrate temperature of 510 °C and different O{sub 2} flow rates. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, UV–Vis–IR spectrophotometry and Hall-effect measurement were used to characterize the films. All films consisted of pure-phase SnO{sub 2} with a rutile structure and showed an epitaxial relationship with the substrate of SnO{sub 2}(100)||Al{sub 2}O{sub 3}(0001) and SnO{sub 2}[010]||Al{sub 2}O{sub 3}< 11–20 >. The crystalline quality and properties of the films were found to be sensitively dependent on the O{sub 2} flow rate during the film growth. The absolute average transmittance of the SnO{sub 2} films exceeded 85% in the visible and infrared spectral region. The films had optical band-gaps (3.72–3.89 eV) that are in line with the band gap of single-crystal SnO{sub 2}. The carrier concentration and Hall mobility of the films decreased from 3.3 × 10{sup 19} to 9 × 10{sup 17} cm{sup −3} and from 19 to 2 cm{sup 2} V{sup −1} s{sup −1}, respectively, while the resistivity increased from 0.01 to 3 Ω cm with increasing of the O{sub 2} flow rate from 5 to 60 sccm. - Highlights: • SnI{sub 2} (Sn{sup 2+}) was used as tin precursor to prepare tin oxide films by CVD. • Epitaxial SnO{sub 2} (100) films were obtained on c-sapphire with thickness more than 1 μm. • The epitaxial relationship is SnO{sub 2}(100)||Al{sub 2}O{sub 3}(0001) and SnO{sub 2}[010]||Al{sub 2}O{sub 3}< 11–20 >. • B{sub 2g} Raman mode was found to be absent in (100)-orientated SnO{sub 2} films on c-sapphire. • The crystal quality and properties of SnO{sub 2} films depended sensitively on the O{sub 2} flow rate.

  12. Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Constantinescu, C.; Patroi, E.; Codescu, M.; Dinescu, M.

    2013-01-01

    Highlights: ► NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. ► Nitrogen inclusion in thin film structures is related to improved coercitivity. ► Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3ω and 4ω) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 °C), nitrogen gas pressure, and radiofrequency power (75–150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

  13. Effect of nitrogen environment on NdFeB thin films grown by radio frequency plasma beam assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, C., E-mail: catalin.constantinescu@inflpr.ro [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania); Patroi, E.; Codescu, M. [National Institute for Research and Development in Electrical Engineering - Advanced Research, 313 Spl. Unirii, Sector 3, RO-030138, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor bd., Magurele, RO-077125, Bucharest (Romania)

    2013-03-01

    Highlights: Black-Right-Pointing-Pointer NdFeB thin films grown by PLD, in vacuum and in nitrogen, are presented. Black-Right-Pointing-Pointer Nitrogen inclusion in thin film structures is related to improved coercitivity. Black-Right-Pointing-Pointer Magnetical, optical and morphological properties of the thin films are discussed. - Abstract: NdFeB is a very attractive material for applications in electrical engineering and in electronics, for high-tech devices where high coercive field and high remanence are needed. In this paper we demonstrate that the deposition of nitrogen doped NdFeB thin films by pulsed laser deposition, in the presence of a nitrogen radiofrequency plasma beam, exhibit improved magnetic properties and surface morphology, when compared to vacuum deposited NdFeB layers. A Nd:YAG pulsed laser (3{omega} and 4{omega}) was focused on a NdFeB target, in vacuum, or in the presence of a nitrogen plasma beam. Substrate temperature (RT-850 Degree-Sign C), nitrogen gas pressure, and radiofrequency power (75-150 W), were particularly varied. The thin films were investigated by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy, spectroscopic-ellipsometry, and vibrating sample magnetometry.

  14. Influence of oxygen flow rate on the structural, optical and electrical properties of ZnO films grown by DC magnetron sputtering

    Science.gov (United States)

    Gobbiner, Chaya Ravi; Ali Avanee Veedu, Muhammed; Kekuda, Dhananjaya

    2016-04-01

    Zinc oxide thin films were deposited on glass substrates at different oxygen flow rates by DC reactive magnetron sputtering. The oxygen flow rate was found to be one of the crucial parameters which influence structural, optical and electrical properties of grown films. The structural and optical characterization of the deposited films was carried out using X-ray diffraction and UV-visible spectroscopy, respectively. Swanepoel envelope and Drude-Lorentz (DL) models were applied to extract the optoelectronic parameters such as refractive index, dispersion energy and plasma frequency. Structurally, grain size was found to decrease with increase in oxygen flow rate during deposition. Moreover, all the films exhibited preferred (002) orientation confirming c-axis orientation of the films perpendicular to the substrate. For a particular range of oxygen flow rates, columnar growth was achieved. Marginal increase in the optical band gap from 3.14 to 3.22 eV was observed as the oxygen flow rate increased from 3 to 10 sccm. Calculated plasma frequency from the DL model was found to be in the infrared region. It has decreased as oxygen flow rate increased with the value from 1.625 × 1014 rad/s (862 cm-1) to 1.072 × 1014 rad/s (568 cm-1).

  15. Mapping the 3D distribution of CdSe nanocrystals in highly oriented and nanostructured hybrid P3HT-CdSe films grown by directional epitaxial crystallization.

    Science.gov (United States)

    Roiban, L; Hartmann, L; Fiore, A; Djurado, D; Chandezon, F; Reiss, P; Legrand, J-F; Doyle, S; Brinkmann, M; Ersen, O

    2012-11-21

    Highly oriented and nanostructured hybrid thin films made of regioregular poly(3-hexylthiophene) and colloidal CdSe nanocrystals are prepared by a zone melting method using epitaxial growth on 1,3,5-trichlorobenzene oriented crystals. The structure of the films has been analyzed by X-ray diffraction using synchrotron radiation, electron diffraction and 3D electron tomography to afford a multi-scale structural and morphological description of the highly structured hybrid films. A quantitative analysis of the reconstructed volumes based on electron tomography is used to establish a 3D map of the distribution of the CdSe nanocrystals in the bulk of the films. In particular, the influence of the P3HT-CdSe ratio on the 3D structure of the hybrid layers has been analyzed. In all cases, a bi-layer structure was observed. It is made of a first layer of pure oriented semi-crystalline P3HT grown epitaxially on the TCB substrate and a second P3HT layer containing CdSe nanocrystals uniformly distributed in the amorphous interlamellar zones of the polymer. The thickness of the P3HT layer containing CdSe nanoparticles increases gradually with increasing content of NCs in the films. A growth model is proposed to explain this original transversal organization of CdSe NCs in the oriented matrix of P3HT.

  16. Oxygen flux influence on the morphological, structural and optical properties of Zn1-xMgxO thin films grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Su, S.C.; Lu, Y.M.; Zhang, Z.Z.; Li, B.H.; Shen, D.Z.; Yao, B.; Zhang, J.Y.; Zhao, D.X.; Fan, X.W.

    2008-01-01

    The Zn 1-x Mg x O thin films were grown on Al 2 O 3 substrate with various O 2 flow rates by plasma-assisted molecular beam epitaxy (P-MBE). The growth conditions were optimized by the characterizations of morphology, structural and optical properties. The Mg content of the Zn 1-x Mg x O thin film increases monotonously with decreasing the oxygen flux. X-ray diffractometer (XRD) measurements show that all the thin films are preferred (0 0 2) orientated. By transmittance and absorption measurements, it was found that the band gap of the film decreases gradually with increasing oxygen flow rate. The surface morphology dependent on the oxygen flow rate was also studied by field emission scanning electron microscopy (FE-SEM). The surface roughness became significant with increasing oxygen flow rate, and the nanostructures were formed at the larger flow rate. The relationship between the morphology and the oxygen flow rate of Zn 1-x Mg x O films was discussed

  17. X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

    2005-02-01

    CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Features of Porous Anodic Alumina Growth in Galvanostatic Regime in Selenic Acid Based Electrolyte

    International Nuclear Information System (INIS)

    Nazarkina, Y.; Kamnev, K.; Dronov, A.; Dudin, A.; Pavlov, A.; Gavrilov, S.

    2017-01-01

    The features of porous anodic Al 2 O 3 formation process in galvanostatic regime in selenic acid based electrolyte under a range of anodization conditions were investigated. The growth process kinetics of porous anodic Al 2 O 3 was characterized by chronopotentiometric curves. The effect of electrolyte concentration, current density and anodization duration on the oxide porous structure ordering was studied by scanning electron microscopy. Approximate regions of self-ordered porous Al 2 O 3 formation process conditions were estimated. It was found that anodization parameters, at which self-ordered porous structure formation is observed, correspond to the conditions of equilibrium of oxidation and etching rates. It is shown that deviations from these conditions lead to the disordering of the porous structure.

  19. Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

    2015-11-02

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.

  20. Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Ju Young [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Laser-IT Research Center, Korea Photonics Technology Institute, GwangJu 500-779 (Korea, Republic of); Song, Jin Dong, E-mail: jdsong@kist.re.kr [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Yang, Hae Suk, E-mail: hsyang@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2012-08-31

    In this study the formation of a semiconducting InSb layer, preceded by the growth of an intermediate layer of InAs quantum dots, is attempted on (001) GaAs substrate. From the analysis of atomic-force-microscopy and transmission-electron-microscopy images together with Raman spectra of the InSb films, it is found that there exists a particular layer-thickness of {approx} 0.5 {mu}m above which the structural and transport qualities of the film are considerably enhanced. The resultant 2.60-{mu}m-thick InSb layer, grown at the substrate temperature of 400 Degree-Sign C and under the Sb flux of 1.5 Multiplication-Sign 10{sup -6} Torr, shows the electron mobility as high as 67,890 cm{sup 2}/Vs. - Highlights: Black-Right-Pointing-Pointer InSb films are grown on GaAs substrate by molecular beam epitaxy. Black-Right-Pointing-Pointer Intermediate layer of InAs quantum dots is inserted at GaAs/InSb interface. Black-Right-Pointing-Pointer Structural and transport properties of InSb are enhanced with InAs quantum dots. Black-Right-Pointing-Pointer Electron mobility over 50,000 cm{sup 2}/Vs is achieved within 1-{mu}m thickness of InSb.

  1. Magnetotransport in MBE-grown topological insulator (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weyrich, Christian; Merzenich, Tobias; Mussler, Gregor; Kampmeier, Joern; Arango, Yulieth; Gruetzmacher, Detlev [Peter Gruenberg Institute (PGI-9), Research Centre Juelich GmbH, 52425 Juelich (Germany); Batov, Igor E. [Peter Gruenberg Institute (PGI-9), Research Centre Juelich GmbH, 52425 Juelich (Germany); Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, 142432, Moscow Distr. (Russian Federation); Schaepers, Thomas [Peter Gruenberg Institute (PGI-9), Research Centre Juelich GmbH, 52425 Juelich (Germany); II. Physikalisches Institut, RWTH Aachen University, 52056 Aachen (Germany)

    2013-07-01

    We report on the magnetotransport study of topological insulator (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films. The films were grown on a silicon on insulator (SOI) substrate with a Si(111)-layer on top by molecular beam epitaxy. In Bi{sub 2}Te{sub 3} samples, we observed a positive magnetoresistance at low magnetic fields with a cusplike minimum at B=0 (weak antilocalization) as well as positive magnetoresistance in the entire magnetic field range (up to 12 T). The weak antilocalization effect disappears when an in-plane field is applied, showing the anisotropy between the transport parallel and perpendicular to the quintuple-layers. The estimated phase coherent lengths up to 250 nm at low temperatures are comparable to those previously obtained for Bi{sub 2}Te{sub 3}. The magnetotransport measurements were also performed on MBE-grown films of Sb{sub 2}Te{sub 3} (p-doped) as well as on the ternary compound (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} (0

  2. High Mobility and Scattering Mechanisms in La-doped BaSnO3 Films Grown by a Radical-based Oxide MBE Approach

    Science.gov (United States)

    Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza; Shukla, Sudhanshu; Ager, Joel; Lo, Cynthia; Jalan, Bharat

    Using experiment and transport modeling, we will present on the detailed electronic transport study of La-doped BaSnO3 films grown via a radical-based oxide MBE approach. Using a chemical precursor of tin, effusion cell for Ba and rf plasma for oxygen, we will first present the discovery of an ``MBE growth window'', in which cation stoichiometry of BaSnO3 films was maintained as 1:1 for a range of Ba/Sn flux ratios. Temperature dependent electronic transport measurements were then performed to investigate the effect of La doping on mobility (μ) and carrier concentrations (n) in stoichiometric BaSnO3 films grown on SrTiO3 (001) substrates. We will discuss the role of charged dislocations, non-stoichiometry and dopant density on the electronic transport properties. Using ab initio calculation and Boltzmann transport equations, temperature-dependent mobility and Seebeck coefficient are calculated and will be presented to elucidate different mobility-limiting scattering mechanisms as a function of n and temperature. This work is supported primarily by NSF (DMR-1410888).

  3. High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD)

    Science.gov (United States)

    Jin, Hyunwoo; Kim, Kwang-Chon; Seo, Juhee; Kim, Seong Keun; Cheong, Byung-Ki; Kim, Jin-Sang; Lee, Suyoun

    2015-10-01

    We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ~ 22 000 cm2 V-1 s-1, magnetoresistance ~ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickness. In addition, the Shubnikov-de Haas oscillation was observed, from which the effective mass was calculated to be consistent with the known value. From the thickness dependence of the Shubnikov-de Haas oscillation, it was found that a two dimensional electron gas with the conventional electron nature coexists with the topological Dirac fermion states and dominates the carrier transport in the Bi2Te3 film with thickness higher than 300 nm. These results are attributed to the intrinsic nature of Bi2Te3 in the high-mobility transport regime obtained by a deliberate choice of the substrate and the growth conditions.We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ~ 22 000 cm2 V-1 s-1, magnetoresistance ~ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickness. In addition, the Shubnikov-de Haas oscillation was observed, from which the effective mass was calculated to be consistent with the known value. From the thickness dependence of the Shubnikov-de Haas oscillation, it was found that a two dimensional electron gas with the conventional electron nature coexists with the topological Dirac fermion states and dominates the carrier transport in the Bi2Te3 film with thickness higher than 300 nm. These results are attributed to the intrinsic nature of Bi2Te3 in the high-mobility transport regime obtained by a deliberate choice of the substrate

  4. Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

    International Nuclear Information System (INIS)

    Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 0 C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90 0 each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

  5. Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

    KAUST Repository

    Park, Jihwey

    2014-02-24

    The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our results show that the interface between LaAlO3 and SrTiO3 is sharper when the oxygen pressure is lower. Over time, the formation of various crystalline phases is observed while the crystalline thickness of the LaAlO3 layer remains unchanged. X-ray scattering as well as atomic force microscopy measurements indicate three-dimensional growth of such phases, which appear to be fed from an amorphous capping layer present in as-grown samples.

  6. Highly textured Sr, Nb co-doped BiFeO{sub 3} thin films grown on SrRuO{sub 3}/Si substrates by rf- sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ostos, C. [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, AP 70360, Mexico D.F. 04510 (Mexico); Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, AP 14, Ensenada B.C. 22890 (Mexico); Raymond, O.; Siqueiros, J. M. [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, AP 14, Ensenada B.C. 22890 (Mexico); Suarez-Almodovar, N. [Universidad de La Habana, Facultad de Fisica-IMRE, San Lazaro y L, 10400, Louisiana Habana (Cuba); Bueno-Baques, D. [Centro de Investigacion en Quimica Aplicada, Enrique Reyna 140, Saltillo, Coah. 25253 (Mexico); Mestres, L. [Universitat de Barcelona, Facultat de Quimica, Av. Diagonal 648, 08028, Barcelona (Spain)

    2011-07-15

    In this study, (011)-highly oriented Sr, Nb co-doped BiFeO{sub 3} (BFO) thin films were successfully grown on SrRuO{sub 3}/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of {approx_equal}5.3 nm and average grain sizes of {approx_equal}65-70 nm for samples with different thicknesses. Remanent polarization values (2P{sub r}) of 54 {mu}C cm{sup -2} at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe{sup 3+}/Fe{sup 2+} trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO{sub 3}/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

  7. Interface strain coupling and its impact on the transport and magnetic properties of LaMnO3 thin films grown on ferroelectrically active substrates

    International Nuclear Information System (INIS)

    Zheng, R.K.; Wang, Y.; Habermeier, H.-U.; Chan, H.L.W.; Li, X.M.; Luo, H.S.

    2012-01-01

    Highlights: ► Strong interface strain coupling in LaMnO 3 /PMN-PT heterostructure. ► In situ dynamic turning of the strain and lattice distortion of LaMnO 3 films. ► Coupling of electrons to lattice strain is crucial to understand the strain effect. - Abstract: Thin films of LaMnO 3 have been epitaxially grown on 〈0 0 1〉 oriented ferroelectric 0.67Pb(Mg 1/3 Nb 2/3 )O 3 -0.33PbTiO 3 (PMN-PT) single-crystal substrates. The poling of the PMN-PT crystal causes a decrease in the resistance and an increase in the magnetization and magnetoresistance of the LaMnO 3 film. In situ X-ray diffraction measurements revealed that these changes arise from the poling-induced strain in the PMN-PT substrate, which reduces the in-plane tensile strain and the Jahn–Teller (JT) distortion of MnO 6 octahedra of the LaMnO 3 film. Moreover, it was found that the transport properties of LaMnO 3 films are much more sensitive to the poling-induced strain than that of CaMnO 3 films for which there is no JT distortion, implying that the electron–lattice coupling is one of the most important ingredients in understanding the strain effect in LaMnO 3 films.

  8. Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

    Science.gov (United States)

    Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

    2017-10-01

    Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

  9. Microstructure and Critical Current Density of YBa2Cu3O7-x + BaSnO3 Thick Films Grown with Pre-Mixed Pulsed Laser Ablation Target (Postprint)

    Science.gov (United States)

    2010-01-01

    AFRL-RZ-WP-TP-2012-0149 MICROSTRUCTURE AND CRITICAL CURRENT DENSITY OF YBa2Cu3O7-x + BaSnO3 THICK FILMS GROWN WITH PRE-MIXED PULSED LASER...CURRENT DENSITY OF YBa2Cu3O7-x + BaSnO3 THICK FILMS GROWN WITH PRE-MIXED PULSED LASER ABLATION TARGET (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b...YBa2Cu3O7-x (YBCO) + BaSnO3 (BSO) thin films with BSO nanocolumns have been shown to have improved critical current density (Jc) in applied magnetic fields

  10. Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

    KAUST Repository

    Yandjah, L.

    2018-04-03

    Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.

  11. X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Tomas, M.C.; Zuniga-Perez, J.; Munoz-Sanjose, V. [Departament de Fisica Aplicada i Electromagnetisme, Valencia (Spain); Vennegues, P.; Tottereau, O. [Centre National de la Recherche Scientifique, Centre de Recherche sur l' Hetero-Epitaxie et ses Applications, Valbonne (France)

    2007-07-15

    In the frame of studying II-VI oxides of interest in optoelectronic technologies, the structural properties of CdO films grown by metalorganic vapour phase epitaxy on a-plane sapphire substrates have been analysed. The study has been performed by means of X-ray diffraction and cross-sectional transmission electron microscopy measurements. CdO films have been found to grow along [111] with the presence of twinned domains. Asymmetrical reflections have been used to study the crystalline quality of the twinned domains, independent of each other, as well as to determine their relative population. The analysis has been made as a function of growth conditions: VI/II precursors molar ratio and growth temperature. (orig.)

  12. X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy

    International Nuclear Information System (INIS)

    Martinez-Tomas, M.C.; Zuniga-Perez, J.; Munoz-Sanjose, V.; Vennegues, P.; Tottereau, O.

    2007-01-01

    In the frame of studying II-VI oxides of interest in optoelectronic technologies, the structural properties of CdO films grown by metalorganic vapour phase epitaxy on a-plane sapphire substrates have been analysed. The study has been performed by means of X-ray diffraction and cross-sectional transmission electron microscopy measurements. CdO films have been found to grow along [111] with the presence of twinned domains. Asymmetrical reflections have been used to study the crystalline quality of the twinned domains, independent of each other, as well as to determine their relative population. The analysis has been made as a function of growth conditions: VI/II precursors molar ratio and growth temperature. (orig.)

  13. Influence of substrate pre-deposition annealing on step edges-induced magnetoresistance in epitaxial magnetite films grown on vicinal MgO (1 0 0) substrates

    International Nuclear Information System (INIS)

    Sofin, R.G.S.; Arora, S.K.; Shvets, I.V.

    2007-01-01

    Magnetoresistance (MR) properties of epitaxial magnetite, Fe 3 O 4 , films grown on vicinal MgO (1 0 0) substrates show an enhancement and anisotropy in the MR in the direction across the step edges compared to the direction along the step edges. The observed enhancement in low-field MR response and MR anisotropy of epitaxial Fe 3 O 4 films is explained by the enhanced spin scattering introduced due to the presence of atomic height steps, which leads to the formation of a greater number of antiphase boundaries (APBs) with out-of-plane shift vectors. We found that the optimum annealing duration required to observe maximum MR anisotropy is between 5 and 9 h. Longer annealing time leads to segregation of Ca impurities on the MgO surface which lead to a decrease in APB density and MR anisotropy

  14. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. [Moscow Technological University “MIREA” (Russian Federation); Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)

    2017-04-15

    The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

  15. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-01-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

  16. Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method.

    Science.gov (United States)

    Balamurali, Subramanian; Chandramohan, Rathinam; Karunakaran, Marimuthu; Mahalingam, Thayan; Parameswaran, Padmanaban; Suryamurthy, Nagamani; Sukumar, Arcod Anandhakrishnan

    2013-07-01

    Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications. Copyright © 2013 Wiley Periodicals, Inc.

  17. Magnetic anisotropy in composite CoFe2O4-BiFeO3 ultrathin films grown by pulsed-electron deposition

    Science.gov (United States)

    Comes, Ryan; Khokhlov, Mikhail; Liu, Hongxue; Lu, Jiwei; Wolf, Stuart A.

    2012-04-01

    Many works have demonstrated perpendicular magnetic anisotropy in CoFe2O4-BiFeO3 (CFO-BFO) composites, which is commonly believed to originate from out-of-plane compressive strain in the CFO pillars due to the lattice mismatch with the BFO matrix. Others have shown that the pillar-matrix interface in similar NiFe2O4-BFO composites is fully relaxed. To study the origin of the magnetic anisotropy, composite films were grown on SrTiO3 with thicknesses ranging from 13 to 150 nm via pulsed electron deposition. In-plane compressive strain in the pillars is found for thinner samples, which induces in-plane magnetoelastic anisotropy. A model for the origin of this previously unreported strain is proposed and the results are contrasted with the thicker composite films found in the literature.

  18. Surface defects on the Gd2Zr2O7 oxide films grown on textured NiW technical substrates by chemical solution method

    DEFF Research Database (Denmark)

    Zhao, Y.; Opata, Yuri Aparecido; Wu, W.

    2017-01-01

    Epitaxial growth of oxide thin films has attracted much interest because of their broad applications in various fields. In this study, we investigated the microstructure of textured Gd2Zr2O7 films grown on (001)〈100〉 orientated NiW alloy substrates by a chemical solution deposition (CSD) method...... showed that the Gd2Zr2O7 grains present within the regular-shaped regions are polycrystalline, whereas those present in the surrounding are epitaxial. Some polycrystalline regions ranging from several micrometers to several tens of micrometers grew across the NiW grain boundaries underneath...... of chemical reaction path to enhance the stability and homogeneity of the precursors of the CSD route....

  19. Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

    Energy Technology Data Exchange (ETDEWEB)

    Gartner, M.; Stroescu, H. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Marin, A., E-mail: alexmarin@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Osiceanu, P. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Anastasescu, M., E-mail: manastasescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Stoica, M.; Nicolescu, M.; Duta, M.; Preda, S. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Aperathitis, E.; Pantazis, A.; Kampylafka, V. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

    2014-09-15

    Highlights: • Graded optical model for ITON films is presented. • ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient. • The lowest resistivity was 2 × 10{sup −3} Ω cm for films deposited in 75%N{sub 2} and RTA at 500 °C. • Films deposited in 75% N{sub 2} and RTA at 500 °C have degenerate semiconductor behavior. • Chemical composition before and after RTA has been analyzed by XPS depth profiling. - Abstract: The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80% In{sub 2}O{sub 3}–20% SnO{sub 2}) target in a mixture of Ar and N{sub 2} plasma (75% N{sub 2}–25% Ar and 100% N{sub 2} respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N{sub 2} ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV–vis–NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75% N{sub 2} and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.

  20. Microstructure and Magnetic Properties of Fe and Fe-alloy Thin Films Epitaxially Grown on MgO(100) Substrates

    International Nuclear Information System (INIS)

    Matsubara, Katsuki; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2011-01-01

    Fe, Fe 50 Co 50 , and Fe 80 Ni 20 (at. %) single-crystal films with the (100) bcc plane parallel to the substrate surface were prepared on MgO(100) single-crystals heated at 300 0 C by ultra high vacuum molecular beam epitaxy. The film growth mechanism, the film structure, and the magnetic properties were investigated. In-situ reflection high energy electron diffraction and X-ray diffraction analyses indicate that the strains in the films are very small though there are fairly large mismatches of -3.7∼-4.3% at the film/substrate interface. Cross-sectional high-resolution transmission electron microscopy shows that misfit dislocations are introduced in the film at the interface. Dislocations are also observed in the film up to around 10∼20 nm distance from the interface. The presence of such dislocation relieves the strain caused by the lattice mismatch. The in-plane magnetization properties of these films reflect the magnetocrystalline anisotropies of respective bulk Fe, Fe 50 Co 50 , and Fe 80 Ni 20 crystals.

  1. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád

    2013-01-01

    , eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

  2. Preparation and properties of Pb(Zr, Ti)O3 films grown by metalorganic chemical vapor deposition

    NARCIS (Netherlands)

    Moret, Mona Pierrette Felicie

    2002-01-01

    The work described in this thesis is the result of four years research on Pb(Zr,Ti)O3 (PZT) thin films at the University of Nijmegen in the Experimental Solid State Physics III group. PZT materials are of high interest for their ultimate applications in thin film form. The two of main interest for

  3. Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. de Moure-Flores

    2012-06-01

    Full Text Available Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.

  4. Spectroscopic ellipsometry studies on ZnCdO thin films with different Cd concentrations grown by pulsed laser deposition

    Science.gov (United States)

    Chen, Shuai; Li, Qingxuan; Ferguson, Ian; Lin, Tao; Wan, Lingyu; Feng, Zhe Chuan; Zhu, Liping; Ye, Zhizhen

    2017-11-01

    A set of Zn1-xCdxO thin films with different Cd concentrations was deposited on quartz substrates by Pulsed Laser Deposition (PLD). The properties of these films were investigated by variable angle and temperature dependent spectroscopic ellipsometry (SE). The experimental Zn1-xCdxO thin films showed a red shift in the absorption edge with increasing Cd contents at room temperature. For ZnCdO films with the similar Cd concentration, it has been found that the film thickness has important effects on the optical constants (n, k). The variations of optical constants (n, k) and the band gap, E0, with temperature (T) in 25 °C-600 °C for a typical Zn0.95Cd0.05O sample were obtained. The E0 vs T relationship is described by a T- quadratic equation.

  5. F-doped SnO2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, H.; Auyeung, R.C.Y.; Pique, A.

    2011-01-01

    Fluorine-doped tin oxide (SnO 2 :F) films were deposited on polyethersulfone plastic substrates by pulsed laser deposition. The electrical and optical properties of the SnO 2 :F films were investigated as a function of deposition conditions such as substrate temperature and oxygen partial pressure during deposition. High quality SnO 2 :F films were achieved under an optimum oxygen pressure range (7.4-8 Pa) at relatively low growth temperatures (25-150 deg. C). As-deposited films exhibited low electrical resistivities of 1-7 mΩ-cm, high optical transmittance of 80-90% in the visible range, and optical band-gap energies of 3.87-3.96 eV. Atomic force microscopy measurements revealed a reduced root mean square surface roughness of the SnO 2 :F films compared to that of the bare substrates indicating planarization of the underlying substrate.

  6. Structure and composition of zirconium carbide thin-film grown by ion beam sputtering for optical applications

    Science.gov (United States)

    Singh, Amol; Modi, Mohammed H.; Dhawan, Rajnish; Lodha, G. S.

    2014-04-01

    Thin film of compound material ZrC was deposited on Si (100) wafer using ion beam sputtering method. The deposition was carried out at room temperature and at base pressure of 3×10-5 Pa. X-ray photoelectron spectroscopy (XPS) measurements were performed for determining the surface chemical compositions. Grazing incidence x-ray reflectivity (GIXRR) measurements were performed to study the film thickness, roughness and density. From GIXRR curve roughness value of the film was found less than 1 nm indicating smooth surface morphology. Films density was found 6.51 g/cm3, which is close to bulk density. Atomic force microscopy (AFM) measurements were performed to check the surface morphology. AFM investigation showed that the film surface is smooth, which corroborate the GIXRR data. Figure 2 of the original article PDF file, as supplied to AIP Publishing, contained a PDF processing error. This article was updated on 12 May 2014 to correct that error.

  7. SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures

    KAUST Repository

    Zou, Bin

    2013-01-08

    A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO3 films had lattice parameters matching those of bulk SrRuO3 material and exhibited room temperature resistivity of 320 μΩ·cm. The resistivity of SrRuO 3/MgO films decreased with increasing oxygen partial pressure. Copyright © 2013 Materials Research Society.

  8. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jingjin Wu

    2016-08-01

    Full Text Available The 4 at. % zirconium-doped zinc oxide (ZnO:Zr films grown by atomic layer deposition (ALD were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  9. Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

    Science.gov (United States)

    Lee, Yueh-Lin; Chuang, Jia-Hao; Huang, Tzu-Hsuan; Ho, Chong-Long; Wu, Meng-Chyi

    2013-03-01

    Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

  10. Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates

    Science.gov (United States)

    Özden, Selin; Koc, Mumin Mehmet

    2018-03-01

    CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force microscopy and Scanning electron microscopy (SEM) before and after each treatment. The Energy Dispersive X-Ray apparatus of SEM was used to characterize the chemical composition. Untreated CdTe films show smooth surface characteristics with root mean square (RMS) roughnesses of 1.18-3.89 nm. The thicknesses of the CdTe layers formed were calculated via FTIR spectrometry and obtained by ex situ spectroscopic ellipsometry. Raman spectra were obtained for various temperatures. Etch pit densities (EPD) were measured, from which it could be seen that EPD changes between 1.7 × 108 and 9.2 × 108 cm-2 depending on the concentration of the Everson etch solution and treatment time. Structure, shape and depth of pits resulting from each etch pit implementation were also evaluated. Pit widths varying between 0.15 and 0.71 µm with heights varying between 2 and 80 nm were observed. RMS roughness was found to vary by anything from 1.56 to 26 nm.

  11. TiO2 thin and thick films grown on Si/glass by sputtering of titanium targets in an RF inductively coupled plasma

    International Nuclear Information System (INIS)

    Valencia-Alvarado, R; López-Callejas, R; Mercado-Cabrera, A; Peña-Eguiluz, R; Muñoz-Castro, A E; Rodríguez-Méndez, B G; De la Piedad-Beneitez, A; De la Rosa-Vázquez, J M

    2015-01-01

    TiO 2 thin and thick films were deposited on silicon/glass substrates using RF inductive plasma in continuous wave. The films thickness, as well as phases control, is achieved with a gradual increase in temperature substrates varying supplied RF power or working gas pressure besides deposition time as well. The deposition conditions were: argon 80%/oxygen 20% carefully calibrated mixture of 2 to 7×10 −2 mbar as working gas pressure range. Deposition time 0.5 to 5 hours, 500 or 600 W RF power at 13.56 MHz frequency and 242-345 °C substrates temperature range. The titanium dioxide deposited on the substrates is grown by sputtering of a titanium target negatively polarized at 3-5 kV DC situated 14 mm in front of such substrates. The plasma reactor is a simple Pyrex-like glass cylindrical vessel of 50 cm long and 20 cm in diameter. Using the before describe plasma parameters we obtained films only anatase and both anatase/rutile phases with stoichiometric different. The films were characterized by X-ray photoelectron spectroscopy (XPS), stylus profilometer, X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy. (paper)

  12. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Science.gov (United States)

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  13. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

    2016-08-13

    The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  14. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ {11}overline{{2}} {0} ]- and [0001]-Oriented Silicon Carbide Substrates

    Science.gov (United States)

    Bishop, S. M.; Reynolds, C. L.; Liliental-Weber, Z.; Uprety, Y.; Zhu, J.; Wang, D.; Park, M.; Molstad, J. C.; Barnhardt, D. E.; Shrivastava, A.; Sudarshan, T. S.; Davis, R. F.

    2007-04-01

    The polytype and surface and defect microstructure of epitaxial layers grown on 4H( {11}overline{{2}} {0} ), 4H(0001) on-axis, 4H(0001) 8° off-axis, and 6H(0001) on-axis substrates have been investigated. High-resolution x-ray diffraction (XRD) revealed the epitaxial layers on 4H( {11}overline{{2}} {0} ) and 4H(0001) 8° off-axis to have the 4H-SiC (silicon carbide) polytype, while the 3C-SiC polytype was identified for epitaxial layers on 4H(0001) and 6H(0001) on-axis substrates. Cathodoluminescence (CL), Raman spectroscopy, and transmission electron microscopy (TEM) confirmed these results. The epitaxial surface of 4H( {11}overline{{2}} {0} ) films was specular with a roughness of 0.16-nm root-mean-square (RMS), in contrast to the surfaces of the other epitaxial layer-substrate orientations, which contained curvilinear boundaries, growth pits (˜3 × 104 cm-2), triangular defects >100 μm, and significant step bunching. Molten KOH etching revealed large defect densities within 4H( {11}overline{{2}} {0} ) films that decreased with film thickness to ˜106 cm-2 at 2.5 μm, while cross-sectional TEM studies showed areas free of defects and an indistinguishable film-substrate interface for 4H( {11}overline{{2}} {0} ) epitaxial layers.

  15. Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Das, Gangadhar; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiOx in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiOx structures in the emerging field of transparent oxide electronics.

  16. CO gas sensing by ultrathin tin oxide films grown by atomic layer deposition using transmission FTIR spectroscopy.

    Science.gov (United States)

    Du, X; Du, Y; George, S M

    2008-10-02

    Ultrathin tin oxide films were deposited on SiO2 nanoparticles using atomic layer deposition (ALD) techniques with SnCl4 and H2O2 as the reactants. These SnO(x) films were then exposed to O2 and CO gas pressure at 300 degrees C to measure and understand their ability to serve as CO gas sensors. In situ transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor both the charge conduction in the SnO(x) films and the gas-phase species. The background infrared absorbance measured the electrical conductivity of the SnO(x) films based on Drude-Zener theory. O2 pressure was observed to decrease the SnO(x) film conductivity. Addition of CO pressure then increased the SnO(x) film conductivity. Static experiments also monitored the buildup of gas-phase CO2 reaction products as the CO reacted with oxygen species. These results were consistent with both ionosorption and oxygen-vacancy models for chemiresistant semiconductor gas sensors. Additional experiments demonstrated that O2 pressure was not necessary for the SnO(x) films to detect CO pressure. The background infrared absorbance increased with CO pressure in the absence of O2 pressure. These results indicate that CO can produce oxygen vacancies on the SnO(x) surface that ionize and release electrons that increase the SnO(x) film conductivity, as suggested by the oxygen-vacancy model. The time scale of the response of the SnO(x) films to O2 and CO pressure was also measured by using transient experiments. The ultrathin SnO(x) ALD films with a thickness of approximately 10 A were able to respond to O2 within approximately 100 s and to CO within approximately 10 s. These in situ transmission FTIR spectroscopy help confirm the mechanisms for chemiresistant semiconductor gas sensors.

  17. Impact of reduced graphene oxide on MoS{sub 2} grown by sulfurization of sputtered MoO{sub 3} and Mo precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Pacley, Shanee, E-mail: shanee.pacley@us.af.mil; Brausch, Jacob; Beck-Millerton, Emory [U.S. Air Force Research Laboratory (AFRL)/Wright Patterson Air Force Base, Wright Patterson, Ohio 45433-7707 (United States); Hu, Jianjun; Jespersen, Michael [University of Dayton Research Institute, 300 College Park, Dayton, Ohio 45469 (United States); Hilton, Al [Wyle Laboratories, 4200 Colonel Glenn Hwy, Beavercreek, Ohio 45431 (United States); Waite, Adam [University Technology Corporation, 1270 N Fairfield Rd., Beavercreek, Ohio 45432 (United States); Voevodin, Andrey A. [Department of Materials Science and Engineering, University of North Texas, 1155 Union Circle, Denton, Texas 76203 (United States)

    2016-07-15

    Monolayer molybdenum disulfide (MoS{sub 2}), a two dimensional semiconducting dichalcogenide material with a bandgap of 1.8–1.9 eV, has demonstrated promise for future use in field effect transistors and optoelectronics. Various approaches have been used for MoS{sub 2} processing, the most common being chemical vapor deposition. During chemical vapor deposition, precursors such as Mo, MoO{sub 3}, and MoCl{sub 5} have been used to form a vapor reaction with sulfur, resulting in thin films of MoS{sub 2}. Currently, MoO{sub 3} ribbons and powder, and MoCl{sub 5} powder have been used. However, the use of ribbons and powder makes it difficult to grow large area-continuous films. Sputtering of Mo is an approach that has demonstrated continuous MoS{sub 2} film growth. In this paper, the authors compare the structural properties of MoS{sub 2} grown by sulfurization of pulse vapor deposited MoO{sub 3} and Mo precursor films. In addition, they have studied the effects that reduced graphene oxide (rGO) has on MoS{sub 2} structure. Reports show that rGO increases MoS{sub 2} grain growth during powder vaporization. Herein, the authors report a grain size increase for MoS{sub 2} when rGO was used during sulfurization of both sputtered Mo and MoO{sub 3} precursors. In addition, our transmission electron microscopy results show a more uniform and continuous film growth for the MoS{sub 2} films produced from Mo when compared to the films produced from MoO{sub 3}. Atomic force microscopy images further confirm this uniform and continuous film growth when Mo precursor was used. Finally, x-ray photoelectron spectroscopy results show that the MoS{sub 2} films produced using both precursors were stoichiometric and had about 7–8 layers in thickness, and that there was a slight improvement in stoichiometry when rGO was used.

  18. Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

    Directory of Open Access Journals (Sweden)

    Samia Ahmed Nadi

    2014-01-01

    Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

  19. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    International Nuclear Information System (INIS)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

  20. Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ananda Sagari, A.R., E-mail: arsagari@gmail.com [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Malm, Jari [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Laitinen, Mikko [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Rahkila, Paavo [Department of Biology of Physical Activity, P.O. Box 35, FIN-40014 University of Jyväskylä (Finland); Hongqiang, Ma [Department of Health Sciences, P.O. Box 35 (L), FIN-40014 University of Jyväskylä (Finland); Putkonen, Matti [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Beneq Oy, P.O. Box 262, FI-01511 Vantaa (Finland); Karppinen, Maarit [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Whitlow, Harry J.; Sajavaara, Timo [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland)

    2013-03-01

    Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R{sub rms} values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on rough metal surfaces with a clear dependence of substrate roughness on the Ca/P atomic ratio of thin films. The in vitro cell-culture studies using MC3T3 mouse osteoblast showed a greater coverage of cells on the surface polished with diamond paste in comparison to rougher surfaces after 24 h culture. No statistically significant difference was observed between Ca–P–O coated and un-coated Ti surfaces for the measured roughness value. The deposited 50 nm thick films did not dissolve during the cell culture experiment. - Highlights: ► Atomic layer deposition of Ca–P–O films on abraded Ti substrate ► Surface analysis using Time-Of-Flight Elastic Recoil Detection Analysis ► Dependence of substrate roughness on the Ca/P atomic ratio of thin films ► An increase in Ca/P atomic ratio with decreasing roughness ► Mouse osteoblast showed greater coverage of cells in polished surface.

  1. Optimization of synthesis conditions of PbS thin films grown by chemical bath deposition using response surface methodology

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, Ersin, E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Yücel, Yasin; Beleli, Buse [Department of Chemistry, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-09-05

    Highlights: • For the first time, RSM and CCD used for optimization of PbS thin film. • Tri-sodium citrate, deposition time and temperature were independent variables. • PbS thin film band gap value was 2.20 eV under the optimum conditions. • Quality of the film was improved after chemometrics optimization. - Abstract: In this study, PbS thin films were synthesized by chemical bath deposition (CBD) under different deposition parameters. Response surface methodology (RSM) was used to optimize synthesis parameters including amount of tri-sodium citrate (0.2–0.8 mL), deposition time (14–34 h) and deposition temperature (26.6–43.4 °C) for deposition of the films. 5-level-3-factor central composite design (CCD) was employed to evaluate effects of the deposition parameters on the response (optical band gap of the films). The significant level of both the main effects and the interaction are investigated by analysis of variance (ANOVA). The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV–visible spectrophotometer. The optimum amount of tri-sodium citrate, deposition time and deposition temperature were found to be 0.7 mL, 18.07 h and 30 °C respectively. Under these conditions, the experimental band gap of PbS was 2.20 eV, which is quite good correlation with value (1.98 eV) predicted by the model.

  2. Characterization of yttria-stabilized zirconia thin films grown by pulsed laser deposition (PLD) on various substrates

    International Nuclear Information System (INIS)

    Rodrigo, K.; Knudsen, J.; Pryds, N.; Schou, J.; Linderoth, S.

    2007-01-01

    Films of yttria-stabilized zirconia (YSZ) were deposited on substrates of various surface types by pulsed laser deposition (PLD). We have investigated formation of YSZ films by X-ray diffraction, focused ion beam and scanning electron microscopy. The deposited material grows with different morphologies such as columns or grains depending on the substrate used. We observed growth of grains only on the polycrystalline substrates, while on the single crystal columnar crystallites were seen. The YSZ coatings were porous, and nanochannels throughout film layers were observed in all YSZ deposits. Regardless of the type of substrate, all films exhibit a cubic phase of YSZ with the (1 1 1) crystallographic planes parallel to the surface as the major peak

  3. Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.; Subrahmanyam, A.

    2007-01-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

  4. Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

  5. Optical, Electrical, and Morphological Effects of Yttrium Doping of Cadmium Oxide Thin Films Grown by Ultrasonic Spray Pyrolysis

    Science.gov (United States)

    Tombak, Ahmet; Baturay, Silan; Kilicoglu, Tahsin; Ocak, Yusuf Selim

    2017-04-01

    CdO films doped with Y concentrations of 0%, 1%, 2%, and 3% were deposited onto soda lime glass using ultrasonic spray pyrolysis. The effect of the doping level on the structural, morphological, optical, and electrical properties of the films was characterized. X-ray diffraction analysis was used to establish that all of the samples were polycrystalline and to determine the structural parameters, i.e., lattice spacing ( d), phases and associated ( hkl) planes, grain size ( D), and dislocation density ( δ). The films possessed high conductivity and carrier concentration, showing n-type semiconducting behavior. The films were almost transparent over the range from 600 nm to 1100 nm. The energy bandgap was 2.43 eV, 2.53 eV, 2.68 eV, and 2.70 eV for Y doping of 0%, 1%, 2%, and 3%, respectively. The refractive index and extinction coefficient of the films over the range from 700 nm to 1100 nm were determined by spectroscopic ellipsometry. Atomic force microscopy revealed the effect of Y doping on the surface morphology of the CdO films.

  6. Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Yu-Tsu Lee

    2016-05-01

    Full Text Available In this paper, we propose a chemically grown titanium oxide (TiO2 on Si to form a heterojunction for photovoltaic devices. The chemically grown TiO2 does not block hole transport. Ultraviolet photoemission spectroscopy was used to study the band alignment. A substantial band offset at the TiO2/Si interface was observed. X-ray photoemission spectroscopy (XPS revealed that the chemically grown TiO2 is oxygen-deficient and contains numerous gap states. A multiple-trap-assisted tunneling (TAT model was used to explain the high hole injection rate. According to this model, the tunneling rate can be 105 orders of magnitude higher for holes passing through TiO2 than for flow through SiO2. With 24-nm-thick TiO2, a Si solar cell achieves a 33.2 mA/cm2 photocurrent on a planar substrate, with a 9.4% power conversion efficiency. Plan-view scanning electron microscopy images indicate that a moth-eye-like structure formed during TiO2 deposition. This structure enables light harvesting for a high photocurrent. The high photocurrent and ease of production of chemically grown TiO2 imply that it is a suitable candidate for future low-cost, high-efficiency solar cell applications.

  7. Hydrogen permeation through sol-gel-coated iron during galvanostatic charging

    International Nuclear Information System (INIS)

    Zakorchemna, I.; Carmona, N.; Zakroczymski, T.

    2008-01-01

    One-layer sol-gel silica-zirconia and two-layer silica-zirconia and zirconia coatings were deposited on one side of iron membranes by spin-coating, densified in air and annealed up to 800 deg. C in vacuum. Hydrogen permeation through the membranes, coated and uncoated, polarised cathodically under galvanostatic control in 0.1 M NaOH solution was studied using the electrochemical permeation technique. During the initial period, the effect of the sol-gel coatings was insignificant. However, the coatings quite efficiently prevented the iron surface become more active to hydrogen entry during a long-lasting cathodic polarisation. In addition, the electrochemical-corrosion behaviour of the coated iron and the effect of the sol-gel coatings on the effective diffusivity of hydrogen in the coated membranes were studied. On the basis of the polarisation curves and the hydrogen permeation data it was proved that the sol-gel coatings blocked the iron surface for the hydrogen evolution reaction and, consequently, for the hydrogen entry into iron. The effective coating coverage was determined by comparison of the hydrogen fluxes permeating the coated and uncoated membranes. Finally the real concentration of hydrogen beneath the uncoated iron sites and the amount of hydrogen stored in a membrane were evaluated

  8. Growth of anodic films on niobium

    International Nuclear Information System (INIS)

    Gomes, M.A.B.; Bulhoes, L.O.S.

    1988-01-01

    The analysis of the response of the galvanostatic growth of anodic films on niobium metal in aqueous solutions is shown. The first spark voltage showed a dependence upon value of current density that could be explained as the incorporation of anions into the film. (M.J.C.) [pt

  9. Microstructural and compositional analysis of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} films grown by MOCVD before and after GCIB smoothing

    Energy Technology Data Exchange (ETDEWEB)

    Hatzistergos, M.S.; Efstathiadis, H.; Reeves, J.L.; Selvamanickam, V.; Allen, L.P.; Lifshin, E.; Haldar, P

    2004-06-15

    The microstructural and compositional evolution of thick (>1 {mu}m) high temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films grown on single crystal SrTiO{sub 3} substrates by the metal organic chemical vapor deposition (MOCVD) process was investigated by focused ion beam microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and atomic force microscopy. This study showed that as the MOCVD YBCO film thickness increased above 0.5 {mu}m, defects such as second phase particles, pores, and misaligned grains preferentially nucleated and grew at the YBCO surface. A portion of this defective top layer was eliminated from all the samples using a gas cluster ion beam (GCIB) process that first removed material with a focused argon cluster beam. Next, an oxygen cluster beam was used to smooth the surface and re-oxygenate the YBCO. Comparing the critical current (I{sub c}) measured before and after GCIB processing showed that the I{sub c} remained the same, and even improved, when part of the defective top layer was removed. This microstructural and electromagnetic 'dead layer' is believed to be responsible for the overall I{sub c} decrease of MOCVD YBCO films thicker than 0.5 {mu}m.

  10. Microstructural and compositional analysis of YBa2Cu3O7-δ films grown by MOCVD before and after GCIB smoothing

    International Nuclear Information System (INIS)

    Hatzistergos, M.S.; Efstathiadis, H.; Reeves, J.L.; Selvamanickam, V.; Allen, L.P.; Lifshin, E.; Haldar, P.

    2004-01-01

    The microstructural and compositional evolution of thick (>1 μm) high temperature superconducting YBa 2 Cu 3 O 7-x (YBCO) films grown on single crystal SrTiO 3 substrates by the metal organic chemical vapor deposition (MOCVD) process was investigated by focused ion beam microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and atomic force microscopy. This study showed that as the MOCVD YBCO film thickness increased above 0.5 μm, defects such as second phase particles, pores, and misaligned grains preferentially nucleated and grew at the YBCO surface. A portion of this defective top layer was eliminated from all the samples using a gas cluster ion beam (GCIB) process that first removed material with a focused argon cluster beam. Next, an oxygen cluster beam was used to smooth the surface and re-oxygenate the YBCO. Comparing the critical current (I c ) measured before and after GCIB processing showed that the I c remained the same, and even improved, when part of the defective top layer was removed. This microstructural and electromagnetic 'dead layer' is believed to be responsible for the overall I c decrease of MOCVD YBCO films thicker than 0.5 μm

  11. On the dielectric and optical properties of surface-anchored metal-organic frameworks: A study on epitaxially grown thin films

    Science.gov (United States)

    Redel, Engelbert; Wang, Zhengbang; Walheim, Stefan; Liu, Jinxuan; Gliemann, Hartmut; Wöll, Christof

    2013-08-01

    We determine the optical constants of two highly porous, crystalline metal-organic frameworks (MOFs). Since it is problematic to determine the optical constants for the standard powder modification of these porous solids, we instead use surface-anchored metal-organic frameworks (SURMOFs). These MOF thin films are grown using liquid phase epitaxy (LPE) on modified silicon substrates. The produced SURMOF thin films exhibit good optical properties; these porous coatings are smooth as well as crack-free, they do not scatter visible light, and they have a homogenous interference color over the entire sample. Therefore, spectroscopic ellipsometry (SE) can be used in a straightforward fashion to determine the corresponding SURMOF optical properties. After careful removal of the solvent molecules used in the fabrication process as well as the residual water adsorbed in the voids of this highly porous solid, we determine an optical constant of n = 1.39 at a wavelength of 750 nm for HKUST-1 (stands for Hong Kong University of Science and Technology-1; and was first discovered there) or [Cu3(BTC)2]. After exposing these SURMOF thin films to moisture/EtOH atmosphere, the refractive index (n) increases to n = 1.55-1.6. This dependence of the optical properties on water/EtOH adsorption demonstrates the potential of such SURMOF materials for optical sensing.

  12. XPS analysis and structural and morphological characterization of Cu{sub 2}ZnSnS{sub 4} thin films grown by sequential evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gordillo, G. [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Calderón, C., E-mail: clcalderont@unal.edu.co [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Bartolo-Pérez, P. [Departamento de Física Aplicada, CINVESTAV-IPN, Mérida, Yuc. (Mexico)

    2014-06-01

    This work describes a procedure to grow single phase Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with tetragonal-kesterite type structure, through sequential evaporation of the elemental metallic precursors under sulphur vapor supplied from an effusion cell. X-ray diffraction analysis (XRD) is mostly used for phase identification but cannot clearly distinguish the formation of secondary phases such as Cu{sub 2}SnS{sub 3} (CTS) because both compounds have the same diffraction pattern; therefore the use of a complementary technique is needed. Raman scattering analysis was used to distinguish these phases. The influence of the preparation conditions on the morphology and phases present in CZTS thin films were investigated through measurements of scanning electron microscopy (SEM) and XRD, respectively. From transmittance measurements, the energy band gap of the CZTS films was estimated to be around 1.45 eV. The limitation of XRD to identify some of the remaining phases after the growth process are investigated and the results of Raman analysis on the phases formed in samples grown by this method are presented. Further, the influence of the preparation conditions on the homogeneity of the chemical composition in the volume was studied by X-ray photoelectron spectroscopy (XPS) analysis.

  13. Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xu; Liu, Xinkun; Li, Haizhu; Huang, Mingju [Henan University, Key Lab of Informational Opto-Electronical Materials and Apparatus, School of Physics and Electronics, Kaifeng (China); Zhang, Angran [South China Normal University, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, Guangzhou (China)

    2017-03-15

    High-quality vanadium oxide (VO{sub 2}) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO{sub 2} has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO{sub 2} thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm. (orig.)

  14. Opto-Electronic Properties of Cu2ZnSnS4 Thin Films Grown by Ultrasonic Spray Pyrolysis

    Science.gov (United States)

    Deepa, K. G.; Sajeesh, T. H.; Jampana, Nagaraju

    2018-01-01

    Cu2ZnSnS4 (CZTS) films are deposited by ultrasonic spray pyrolysis technique for photovoltaic applications. The optoelectronic properties are studied by varying Zn and Sn compositions in the film. Films showed a tetragonal kesterite structure with preferential orientation along the (112) plane. The sample with the highest Cu concentration showed the lowest band gap of 1.46 eV. The grain size of the films is greater than 1 μm. Temperature-dependent conductivity studies revealed the presence of defects such as VCu, VS, VSn, CuZn, ZnCu, ZnSn and SnZn in the films. The sample with a Cu/(Zn + Sn) ratio of 0.75 showed Cu-poor and Zn-rich composition and better opto-electronic properties. The sample has p-type conductivity with a resistivity of 12 Ω cm. A [VCu-ZnCu] defect complex is identified in this sample along with a ZnSn acceptor level which is favorable for solar cells.

  15. Structural, morphological and local electric properties of TiO2 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gyoergy, E; Pino, A Perez del; Sauthier, G; Figueras, A; Alsina, F; Pascual, J

    2007-01-01

    Titanium dioxide (TiO 2 ) thin films were synthesized on (1 0 0) Si substrates by reactive pulsed laser deposition (PLD) technique. A frequency quadrupled Nd : YAG (λ = 266 nm, τ FWHM ≅ 5 ns, ν = 10 Hz) laser source was used for the irradiations of metallic Ti targets. The experiments were performed in controlled oxygen atmosphere. Crystallinity, surface morphology and local electric properties of the obtained oxide thin films were investigated by x-ray diffractometry, micro-Raman spectroscopy and current sensing atomic force microscopy. An inter-relation was found between the surface morphology, the crystalline structure and the nano-scale electric properties which open the possibility of synthesizing by the PLD technique TiO 2 thin films with tunable functional properties for future applications such as photocatalysts, gas sensors or solar energy converters

  16. Morphological and structural characterization of CrO2/Cr2O3 films grown by Laser-CVD

    International Nuclear Information System (INIS)

    Sousa, P.M.; Silvestre, A.J.; Popovici, N.; Conde, O.

    2005-01-01

    This work reports on the synthesis of chromium (III, IV) oxides films by KrF laser-assisted CVD. Films were deposited onto sapphire substrates at room temperature by the photodissociation of Cr(CO) 6 in dynamic atmospheres containing oxygen and argon. A study of the processing parameters has shown that partial pressure ratio of O 2 to Cr(CO) 6 and laser fluence are the prominent parameters that have to be accurately controlled in order to co-deposit both the crystalline oxide phases. Films consistent with such a two-phase system were synthesised for a laser fluence of 75 mJ cm -2 and a partial pressure ratio of about 1

  17. Structural and thermal characterization of La5Ca9Cu24O41 thin films grown by pulsed laser deposition on (1 1 0) SrTiO3 substrates

    International Nuclear Information System (INIS)

    Svoukis, E.; Athanasopoulos, G.I.; Altantzis, Th.; Lioutas, Ch.; Martin, R.S.; Revcolevschi, A.; Giapintzakis, J.

    2012-01-01

    In the present study stoichiometric, b-axis oriented La 5 Ca 9 Cu 24 O 41 thin films were grown by pulsed laser deposition on (1 1 0) SrTiO 3 substrates in the temperature range 600–750 °C. High resolution transmission electron microscopy was employed to investigate the growth mechanism and the epitaxial relationship between the SrTiO 3 substrates and the La 5 Ca 9 Cu 24 O 41 films grown at 700 °C. The 3-ω method was used to measure the cross-plane thermal conductivity of La 5 Ca 9 Cu 24 O 41 films in the temperature range 50–350 K. The observed glass-like behavior is attributed to atomic-scale defects, grain boundaries and an interfacial layer formed between film and substrate.

  18. X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

    Directory of Open Access Journals (Sweden)

    L. J. Collins-McIntyre

    2014-12-01

    Full Text Available We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE, investigated by x-ray diffraction (XRD, atomic force microscopy (AFM, SQUID magnetometry and x-ray magnetic circular dichroism (XMCD. Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS, and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μB/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μB/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

  19. Control of the magnetic properties of LaMnO3 epitaxial thin films grown by Pulsed Laser Deposition

    Science.gov (United States)

    Martinez, Benjamin; Roqueta, Jaume; Pomar, Alberto; Balcells, Lluis; Frontera, Carlos; Konstantinovic, Zorica; Sandiumenge, Felip; Santiso, Jose; Advanced materials characterization Team; Thin films growth Team

    2015-03-01

    LaMnO3 (LMO), the parent compound of colossal magnetoresistance based manganites has gained renewed attention as a building block in heterostructures with unexpected properties. In its bulk phase, stoichiometric LMO is an A-type antiferromagnetic (AFM) insulator (TN = 140K) with orthorhombic structure that easily accommodate an oxygen excess by generating cationic (La or Mn) vacancies. As a result, a fraction of Mn 3+ changes to Mn 4+ leading to a double-exchange mediated ferromagnetic (FM) behavior. In thin films the AFM phase has been elusive up to now and thin films with FM ordering are usually reported. In this work, we have systematically studied the growth process of LaMnO3 thin films by pulsed laser deposition on SrTiO3 (001) substrates under different oxygen partial pressures (PO2) . A close correlation between the structure (explored by XRD) and the magnetic properties (SQUID measurements) of the films with PO2 has been identified. At high PO2 FM behavior is observed. In contrast, at very low PO2, the results obtained for unit cell volume (close to stoichiometric bulk values) and magnetic moment (0.2 μB/Mn) strongly indicate antiferromagnetic ordering. We acknowledge financial support from the Spanish MINECO (MAT2012-33207).

  20. Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Kuang-I, E-mail: kilin@mail.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Chen, Yen-Jen; Wang, Bo-Yan; Cheng, Yung-Chen [Department of Materials Science, National University of Tainan, Tainan 70005, Taiwan (China); Chen, Chang-Hsiao, E-mail: chsiaoc@fcu.edu.tw [Department of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2016-03-21

    Room-temperature photoreflectance (PR) and reflectance (R) spectroscopy are utilized to investigate the near-band-edge transitions of molybdenum disulfide (MoS{sub 2}) thin films grown on sapphire substrates by a hot-wall chemical vapor deposition system. The layer thickness and optical properties of the MoS{sub 2} thin films are confirmed by Raman spectroscopy, atomic force microscope, and photoluminescence (PL) analysis. The B exciton shows relatively weak PL intensity in comparing with the A exciton even for monolayer MoS{sub 2} films. In the R spectrum of few‐layer MoS{sub 2}, it is not possible to clearly observe exciton related features. The PR spectra have two sharp, derivative-like features on a featureless background. Throughout the PR lineshape fitting, the transition energies are designated as the A and B excitons at the K-point of the Brillouin zone, but at room temperature there seems to be no distinguishable feature corresponding to an H‐point transition for the mono- and few-layer MoS{sub 2} films unlike in bulk. These transition energies are slightly larger than those obtained by PL, which is attributed to the Stokes shifts related to doping level. The obtained values of valence-band spin-orbit splitting are in good agreement with those from other experimental methods. By comparing the PR lineshapes, the dominant modulation mechanism is attributed to variations of the exciton transition energies due to change in the built-in electric field. On the strength of this study, PR spectroscopy is demonstrated as a powerful technique for characterizing the near-band-edge transitions of MoS{sub 2} from monolayer to bulk.

  1. Stress, microstructure and evolution under ion irradiation in thin films grown by ion beam sputtering: modelling and application to interfacial effects in metallic multilayers

    International Nuclear Information System (INIS)

    Debelle, A.

    2006-09-01

    We have investigated the formation of the interfacial chemical mixing in Mo/Ni multilayers, and particularly the influence of ballistic effects during the growth. For this purpose, hetero-epitaxial b.c.c./f.c.c. Mo(110)/Ni(111) multilayers were grown by two deposition methods: thermal evaporation and direct ion beam sputtering. As a preliminary, an accurate description of the stress state in pure sputtered Mo thin films was required. Microstructural and stress state analyses were essentially carried out by X-ray diffraction, and ion irradiation was used as a powerful tool to control the stress level. We showed that thermal evaporated thin films exhibit a weak tensile growth stress (∼ 0.6 GPa) that can be accounted for by the grain boundary relaxation model, whereas sputtered thin films develop large compressive growth stress (- 2 to - 4 GPa). This latter results from the bombardment of the growing film by the energetic particles involved during the sputtering process (atomic peening phenomenon), which induces the formation of defects in the layers, generating volume distortions. We thus developed a stress model that includes a hydrostatic stress component to account for these volume strains. This model allowed us to determine the 'unstressed and free of defects lattice parameter' a 0 , solely linked to chemical effects. For epitaxial Mo layers, it was possible to separate coherency stress from growth stress due to their distinct kinetic evolution during ion irradiation. Therefore, the stress analysis enabled us to determine the a 0 values in Mo sub-layers of Mo/Ni superlattices. A tendency to the formation of an interfacial alloy is observed independently of the growth conditions, which suggests that thermodynamic forces favour the exchange mechanism. However, the extent of the intermixing effect is clearly enhanced by ballistic effects. (author)

  2. Morphology and photoluminescence of ZnO nanorods grown on sputtered GaN films with intermediate ZnO seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Nandi, R. [Department of Physics, Indian Institute of Technology Bombay, Mumbai, 400076 (India); Srinivasa, R.S. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai, 400076 (India); Major, S.S., E-mail: syed@iitb.ac.in [Department of Physics, Indian Institute of Technology Bombay, Mumbai, 400076 (India)

    2016-10-01

    ZnO nanorods (NRs) were grown by chemical bath deposition on sputtered GaN over Si with and without sputtered ZnO seed layers. The effect of ZnO seed layer thickness, precursor concentration and growth temperature on the morphology and photoluminescence (PL) of ZnO-NRs has been studied. Scanning electron microscopy studies at different stages of growth have shown that the thickness of ZnO seed layer is critically important for controlling the growth behavior, morphology and density of ZnO-NRs on GaN surface. ZnO-NRs on bare GaN/Si grow with a large diameter and small aspect ratio of ∼4, displaying the tendency of lateral growth. Introduction of a thin ZnO seed layer (10 nm) under optimized precursor concentration and temperature drastically increases the aspect ratio to ∼16, due to partial coverage of ZnO on GaN surface and a moderate density of nucleation with small critical size. ZnO seed layers of higher thickness (50 nm and 100 nm) result in reduced aspect ratio due to increase in nucleation density and limited availability of reacting species. Increase in precursor concentration results in pronounced lateral growth and the decrease in growth temperature also results in compact nanorods with reduced aspect ratios. Room temperature photoluminescence (PL) studies show that ZnO-NRs on GaN, grown with or without ZnO seed layer under optimized precursor concentration and temperature, display high near-band-edge luminescence and negligible defect emission, compared to the nanorods on a ZnO seed layer over Si, as well as those grown at higher precursor concentration and lower temperatures. The enhanced PL is attributed to the absence of crystalline defects at nanorod interfaces due to lateral coalescence, arising from the moderate density and slight misalignment of the nanorods. - Highlights: • ZnO nanorods grown on sputtered GaN film display strong tendency of lateral growth. • Nanorods grown on 10 nm ZnO/GaN display moderate density and high aspect ratios.

  3. Stress relaxation in thick-film GaN grown by hydride vapor phase epitaxy on sapphire and spinel substrates as studied by photoluminescence and raman spectroscopy

    CERN Document Server

    Kim, S T; Lee, C; Kim, J E; Park, H Y

    1999-01-01

    The residual strains in thick-film GaN grown on both sapphire and spinel substrates has been evaluated by photoluminescence (PL) and raman spectroscopy . The strain-free shallow donor bound exciton recombination energy (I sub 2) is 3.468 eV at 10 K. The raman mode frequency shift with residual strain with estimated as DELTA w = 3.93 cm sup - sup 1 per one GPa for GaN layers on both substrates . The linear relationship between the PL I sub 2 line and the raman E sub 2 mode frequency is DELTA E/DELTA w = 5.12 meV/cm sup - sup 1 , which leads to a stress-induced PL line shift of DELTA E = 20 meV/GPa.

  4. Fe{sub 3}Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO{sub 2} film technique

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Fukuda, Kenjiro; Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2011-10-03

    Ultrahigh density (> 10{sup 12} cm{sup -2}) Fe{sub 3}Si nanodots (NDs) are epitaxially grown on Si(111) substrates by codeposition of Fe and Si on the ultrathin SiO{sub 2} films with ultrahigh density nanovoids. We used two kinds of methods for epitaxial growth: molecular beam epitaxy (MBE) and solid phase epitaxy. For MBE, low temperature (< 300 deg. C) growth of the Fe{sub 3}Si NDs is needed to suppress the interdiffusion between Fe atoms deposited on the surfaces and Si atoms in the substrate. These epitaxial NDs exhibited the ferromagnetism at low temperatures, which were expected in terms of the application to the magnetic memory device materials.

  5. Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

    International Nuclear Information System (INIS)

    Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

    2002-01-01

    In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

  6. Porous hydroxyapatite template grown on self-assembly of lysozyme and saccharose and langmuir-blodgett thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cavinattot, D.; Zavaglia, C.A.C. [Federal School of Itajuba, MG (Brazil). Inst. of Mechanical Engineering; Costa, N. [State Univ. of Campinas (Brazil). Faculty of Mechanical Engineering

    2001-07-01

    The methodology adopted on this work consists on producing an organic template with functional group and intermolecular distance defined by the Langmuir-Blodgett (LB) techniques. The functionalized substrates work orientating crystal growth of hydroxyapatite after being immersed in a solution simulating the body fluid at the body usual temperature. Electrons beams used in electronic microscopy can destroy the organic thin film. Based on that, the technique adopted on the characterization of the organic template and the hydroxyapatite film is the Atomic Force Microscopy. Porous and adhesive hydroxyapatite layers have been obtained, creating a good interface between the implanted material and the cellular tissue and also improving its bioactive and mechanical performance. It will certainly improve the performance of the prosthetic material when implanted. (orig.)

  7. The surface condition effect of Cu2O flower/grass-like nanoarchitectures grown on Cu foil and Cu film

    Science.gov (United States)

    2013-01-01

    Cu2O flower/grass-like nanoarchitectures (FGLNAs) were fabricated directly on two category specimens of Cu foils and Cu film using thermal oxidation method. The FGLNAs are approximately 3.5 to 12 μm in size, and their petals are approximately 50 to 950 nm in width. The high compressive stress caused by a large oxide volume in the Cu2O layer on the specimen surface played an important role in the growth of FGLNAs. The effects of surface conditions, such as the surface stresses, grain size, and surface roughness of Cu foil and Cu film specimens, on the FGLNA growth were discussed in detail. PACS 81. Materials science; 81.07.-b Nanoscale materials and structures: fabrication and characterization; 81.16.Hc Catalytic methods PMID:24164860

  8. Optical and electrical studies of possible VO2 thin film nanostructures grown using laser ablated V2O5

    Science.gov (United States)

    Zinzuvadiya, Sushant; Joshi, U. S.

    2017-05-01

    The metal insulator transition (MIT) has been a focus of study for many years to researchers as the results are expected to help its future device applications in electronics. VO2 in its pure crystalline phase exhibit reversible MIT at about 68 °C, making it promising for memory based devices. Due to the multivalent nature of vanadium, synthesis of stoichiometric VO2 is a challenge. In this communication, we report the results of electrical and surface structural studies of Vanadium Oxide thin film nanostructures. The films were prepared using Pulsed Laser Deposition (PLD) Technique on quartz substrates. XRD revealed single orthorhombic phase. A smooth surface topography showing 58 nm average grain size with highly mono-dispersed grain distribution as studied by Atomic Force Microscopy (AFM). The temperatures dependant resistance measurements exhibited a clear and reversible MIT near 280° C. The band-gap was estimated to be 3.5 eV using the UV-Vis. spectroscopy.

  9. Amorphous SiO {sub x} nanowires grown on silicon (100) substrates via rapid thermal process of nanodiamond films

    Energy Technology Data Exchange (ETDEWEB)

    Liang Xingbo [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Wang Lei [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yang Deren [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)]. E-mail: mseyang@zju.edu.cn

    2006-05-01

    Rapid thermal process (RTP) has been carried out on the deposited nanocrystalline diamond (NCD) films. The RTP treatments performed at 800 and 1200 deg. C have been shown to exert prominent influence on the morphology and structure of the NCD films. The loss of material at grain boundaries has been observed at both 800 and 1200 deg. C RTP treatments. Large-scale amorphous SiO {sub x} nanowires with diameters of 30-50 nm and length up to 10 {mu}m were synthesized after RTP treatment at 1200 deg. C for 60 s. The synthesized nanowires were characterized in detail by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and energy-dispersed X-ray spectrometry analysis. A possible growth mechanism has been proposed to explain the observed phenomenon.

  10. Structural and magnetic properties of epitaxial delafossite CuFeO{sub 2} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, Toyanath; Senty, Tess R.; Trappen, Robbyn; Zhou, Jinling; Borisov, Pavel; Holcomb, Mikel B.; Bristow, Alan D.; Lederman, David [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Chen, Song; Song, Xueyan [Department of Mechanical and Aerospace Engineering, West Virginia University, Morgantown, West Virginia 26506-6070 (United States); Ferrari, Piero; Cabrera, Alejandro L. [Pontificia Universidad Catolica, Instituto de Física, Santiago (Chile)

    2015-01-07

    Growth of pure phase delafossite CuFeO{sub 2} thin films on Al{sub 2}O{sub 3} (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO{sub 2} films demonstrated a phase transition at T{sub C} ≈ 15 ± 1 K, which agrees with the first antiferromagnetic transition at 14 K in the bulk CuFeO{sub 2}. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis.

  11. Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    OpenAIRE

    Y., Hayashi; G., Yu; M. M., Rahman; K. M., Krishna; Tetsuo, Soga; Takashi, Jimbo; Masayoshi, Umeno

    2001-01-01

    Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH4 as the source of carbon and with different nitrogen flow rates (N2/CH4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spe...

  12. Role of the substrate on the magnetic anisotropy of magnetite thin films grown by ion-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Prieto, Pilar, E-mail: pilar.prieto@uam.es [Dpto. Física Aplicada M-12, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Prieto, José Emilio [Centro de Microanálisis de Materiales (CMAM) and Dpto. De Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Gargallo-Caballero, Raquel; Marco, José Francisco; Figuera, Juan de la [Instituto de Química Física “Rocasolano”, CSIC, 28006 Madrid (Spain)

    2015-12-30

    Graphical abstract: - Highlights: • The magnetic anisotropy of magnetite thin films is controlled by the substrate induced microstructure. • Single-crystal oxide substrates induce fourfold in-plane magnetic anisotropy • MgO and SrTiO{sub 3} substrates show the same magnetic behavior despite its different mismatch with Fe{sub 3}O{sub 4} films. • Silicon and glass substrates induce in-plane magnetic isotropy and uniaxial anisotropy, respectively. - Abstract: Magnetite (Fe{sub 3}O{sub 4}) thin films were deposited on MgO (0 0 1), SrTiO{sub 3} (0 0 1), LaAlO{sub 3} (0 0 1) single crystal substrates as well on as silicon and amorphous glass in order to study the effect of the substrate on their magnetic properties, mainly the magnetic anisotropy. We have performed a structural, morphological and compositional characterization by X-ray diffraction, atomic force microscopy and Rutherford backscattering ion channeling in oxygen resonance mode. The magnetic anisotropy has been investigated by vectorial magneto-optical Kerr effect. The results indicate that the magnetic anisotropy is especially influenced by the substrate-induced microstructure. In-plane isotropy and uniaxial anisotropy behavior have been observed on silicon and glass substrates, respectively. The transition between both behaviors depends on grain size. For LaAlO{sub 3} substrates, in which the lattice mismatch between the Fe{sub 3}O{sub 4} films and the substrate is significant, a weak in-plane fourfold magnetic anisotropy is induced. However when magnetite is deposited on MgO (0 0 1) and SrTiO{sub 3} (0 0 1) substrates, a well-defined fourfold in-plane magnetic anisotropy is observed with easy axes along [1 0 0] and [0 1 0] directions. The magnetic properties on these two latter substrates are similar in terms of magnetic anisotropy and coercive fields.

  13. The RF plasma surface chemical modification of nanodiamond films grown on glass and silicon at low temperature

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Kromka, Alexander; Vaněček, Milan; Grinevich, A.; Hartmannová, H.; Kmoch, S.

    2007-01-01

    Roč. 16, - (2007), s. 671-674 ISSN 0925-9635 R&D Projects: GA MŠk LC510; GA ČR(CZ) GA202/05/2233; GA AV ČR KJB100100623 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond film * nanocrystalline * coatings * biomedical applications Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.788, year: 2007

  14. Phase degradation in BxGa1-xN films grown at low temperature by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.; Allerman, Andrew A.; Lee, Stephen R.

    2017-04-01

    Using metalorganic vapor phase epitaxy, a comprehensive study of BxGa1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750-900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to 7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stacking faults and little or no room temperature photoluminescence emission. Films with peaks, near-band-edge photoluminescence emission at 362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. Only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.

  15. Hydrogen sensing by sol–gel grown NiO and NiO:Li thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sta, I., E-mail: imenstalpv@yahoo.fr [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); Jlassi, M. [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); Kandyla, M. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vasileos Konstantinou Ave., 11635 Athens (Greece); Hajji, M. [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); National School of Electronics and Telecommunications of Sfax, Sfax Technopark, BP 1163, CP 3018 Sfax (Tunisia); Koralli, P. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vasileos Konstantinou Ave., 11635 Athens (Greece); Allagui, R. [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); Kompitsas, M. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vasileos Konstantinou Ave., 11635 Athens (Greece); Ezzaouia, H. [Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2015-03-25

    Highlights: • NiO:Li sensors were able to detect 1000 ppm hydrogen concentration in air. • The operation temperature was as low as 140 °C. • Performance of sensors was significantly improved by Li doping. - Abstract: Hydrogen sensors have been prepared using nickel oxide (NiO) and lithium-doped nickel oxide (NiO:Li) thin films, deposited on glass substrates by the sol–gel spin coating technique. The surface morphology, structure, optical and electrical properties of the obtained films were studied. Hydrogen sensing results are presented for three operating temperatures (140, 160, and 180 °C) and for hydrogen concentrations ranging from 1000 to 15,000 ppm in synthetic air. The NiO and NiO:Li (2% and 8% doping concentrations) sensors show maximum responses for the operating temperature of 180 °C. When tested at different hydrogen concentrations in air, the lithium-doped NiO sensors showed a higher response than the undoped NiO films.

  16. Hydrogen sensing by sol–gel grown NiO and NiO:Li thin films

    International Nuclear Information System (INIS)

    Sta, I.; Jlassi, M.; Kandyla, M.; Hajji, M.; Koralli, P.; Allagui, R.; Kompitsas, M.; Ezzaouia, H.

    2015-01-01

    Highlights: • NiO:Li sensors were able to detect 1000 ppm hydrogen concentration in air. • The operation temperature was as low as 140 °C. • Performance of sensors was significantly improved by Li doping. - Abstract: Hydrogen sensors have been prepared using nickel oxide (NiO) and lithium-doped nickel oxide (NiO:Li) thin films, deposited on glass substrates by the sol–gel spin coating technique. The surface morphology, structure, optical and electrical properties of the obtained films were studied. Hydrogen sensing results are presented for three operating temperatures (140, 160, and 180 °C) and for hydrogen concentrations ranging from 1000 to 15,000 ppm in synthetic air. The NiO and NiO:Li (2% and 8% doping concentrations) sensors show maximum responses for the operating temperature of 180 °C. When tested at different hydrogen concentrations in air, the lithium-doped NiO sensors showed a higher response than the undoped NiO films

  17. Infrared blocking, microwave and terahertz low-loss transmission AlN films grown on flexible polymeric substrates

    Science.gov (United States)

    Rudenko, E.; Tsybrii, Z.; Sizov, F.; Korotash, I.; Polotskiy, D.; Skoryk, M.; Vuichyk, M.; Svezhentsova, K.

    2017-04-01

    Aluminum nitride (AlN) film coatings on flexible substrates (polymeric Teflon, Mylar) have been obtained using a hybrid helicon-arc ion-plasma deposition technique with high adhesion of coatings. Studies of optical, morphological, and structural properties of AlN films have been carried out. It was found that AlN coatings on Teflon and Mylar thin-film substrates substantially suppress transmission of infrared (IR) radiation within the spectral range λ ˜ 5-20 μm at certain technological parameters and thickness of AlN. Transmission in THz regions by using quasioptics attains T ≈ 79%-95%, and losses measured in the channels within the microwave region 2 to 36 GHz are thermal conductivity of AlN, could be used as efficient blocking structures in the infrared spectral range ("infrared stealth") withdrawing the heat from filters warmed by IR radiation. At the same time, they can be used as the transparent ones in the microwave and THz regions, which can be important for low-temperature detector components of navigation, positioning, and telecommunication systems due to reducing the background noise.

  18. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  19. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    International Nuclear Information System (INIS)

    Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

    2013-01-01

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

  20. Defect characterization of MOCVD grown AlN/AlGaN films on sapphire substrates by TEM and TKD

    Science.gov (United States)

    O'Connell, J. H.; Lee, M. E.; Westraadt, J.; Engelbrecht, J. A. A.

    2018-04-01

    High resolution transmission electron microscopy (TEM) has been used to characterize defects structures in AlN/AlGaN epilayers grown by metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire (Al2O3) substrates. The AlN buffer layer was shown to be epitaxially grown on the sapphire substrate with the two lattices rotated relatively through 30°. The AlN layer had a measured thickness of 20-30 nm and was also shown to contain nano-sized voids. The misfit dislocations in the buffer layer have been shown to be pure edge with a spacing of 1.5 nm. TEM characterization of the AlGaN epilayers was shown to contain a higher than expected threading dislocation density of the order 1010 cm-2 as well as the existence of "nanopipes". TEM analysis of the planar lamella for AlGaN has presented evidence for the possibility of columnar growth. The strain and misorientation mapping in the AlGaN epilayer by transmission Kikuchi diffraction (TKD) using the FIB lamella has also been demonstrated to be complimentary to data obtained by TEM imaging.

  1. Physical properties characterization of WO{sub 3} films grown by hot-filament metal oxide deposition

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Reyes, J., E-mail: jdiazr2001@yahoo.com [Centro de Investigacion en Biotecnologia Aplicada del Instituto Politecnico Nacional, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Delgado-Macuil, R.J. [Centro de Investigacion en Biotecnologia Aplicada del Instituto Politecnico Nacional, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Dorantes-Garcia, V. [Preparatoria ' Simon Bolivar' de la Benemerita Universidad Autonoma de Puebla, 4 Oriente 408, Col. Centro, Atlixco, Puebla, C. P. 74200 (Mexico); Perez-Benitez, A. [Facultad de Ciencias Quimicas de la Benemerita Universidad Autonoma Puebla, 14 Sur y Av. San Claudio, Col. San Manuel, Puebla, Puebla, C. P. 72570 (Mexico); Balderas-Lopez, J.A. [Unidad Profesional Interdisciplinaria de Biotecnologia del Instituto Politecnico Nacional, Avenida Acueducto S/N, Col. Barrio la Laguna, Ticoman, Del. Gustavo A. Madero, Mexico, D.F. 07340 (Mexico); Ariza-Ortega, J.A. [Centro de Investigacion en Biotecnologia Aplicada del Instituto Politecnico Nacional, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico)

    2010-10-25

    WO{sub 3} is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains that WO{sub 3} presents mainly monoclinic crystalline phase. The chemical stoichiometry is obtained by X-ray Photoelectron Spectroscopy (XPS). The IR spectrum of the as-grown WO{sub 3} presents broad peaks in the range of 1100 to 3600 cm{sup -1}. A broad band in the 2200 to 3600 cm{sup -1} region and the peaks sited at 1645 and 1432 cm{sup -1} are well resolved, which are originated from moisture and are assigned to {nu}(OH) and {delta}(OH) modes of adsorbed water and the corresponding tungsten oxide vibrations are in infrared region from 400 to 1453 cm{sup -1} and around 3492 cm{sup -1}, which correspond to tungsten-oxygen (W-O) stretching, bending and lattice modes. The Raman spectrum shows intense peaks at 801, 710, 262 and 61 cm{sup -1} that are typical Raman peaks of crystalline WO{sub 3} (m-phase) that correspond to stretching vibrations of the bridging oxygen, which are assigned to W-O stretching ({nu}) and W-O bending ({delta}) modes, respectively. By transmittance measurements obtains that the WO{sub 3} band gap can be varied from 2.92 to 3.13 eV in the investigated annealing temperature range.

  2. HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD

    KAUST Repository

    Sun, Haiding

    2018-03-06

    Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive the success of fabricating semiconductor devices in scale when a large low-cost native substrate is not available. Here, we successfully synthesized three different phases of Ga2O3 (α, β, and ε) films on c-plane sapphire by only tuning the flow rate of HCl along with other precursors in an MOCVD reactor. A 3-fold increase in the growth rate of pure β-Ga2O3 was achieved by introducing only 5 sccm of HCl flow. With continuously increased HCl flow, a mixture of β- and ε-Ga2O3 was observed, until the Ga2O3 film transformed completely to a pure ε-Ga2O3 with a smooth surface and the highest growth rate (∼1 μm/h) at a flow rate of 30 sccm. At 60 sccm, we found that the film tended to have a mixture of α- and ε-Ga2O3 with a dominant α-Ga2O3, while the growth rate dropped significantly (∼0.4 μm/h). The film became rough as a result of the mixture phases since the growth rate of ε-Ga2O3 is much higher than that of α-Ga2O3. In this HCl-enhanced MOCVD mode, the Cl impurity concentration was almost identical among the investigated samples. On the basis of our density functional theory calculation, we found that the relative energy between β-, ε-, and α-Ga2O3 became smaller, thus inducing the phase change by increasing the HCl flow in the reactor. Thus, it is plausible that the HCl acted as a catalyst during the phase transformation process. Furthermore, we revealed the microstructure and the epitaxial relationship between Ga2O3 with different phases and the c-plane sapphire substrates. Our HCl-enhanced MOCVD approach paves the way to achieving highly controllable heteroepitaxy of Ga2O3 films with different phases for device applications.

  3. Photoresponse properties of BaSi{sub 2} epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Suemasu, Takashi, E-mail: suemasu@bk.tsukuba.ac.jp; Saito, Takanobu; Toh, Katsuaki; Okada, Atsushi; Khan, Muhammad Ajmal

    2011-10-03

    We have successfully grown 360-nm-thick undoped n-BaSi{sub 2} epitaxial layers on the n{sup +}-BaSi{sub 2}/p{sup +}-Si(111) tunnel junction, by molecular beam epitaxy. The external quantum efficiency reached approximately 17.8% at 500 nm under a reverse bias voltage of 4 V at room temperature, the highest value ever reported for semiconducting silicides. The quantum efficiency was compared to 240-nm-thick undoped n-BaSi{sub 2} epitaxial layers on a p-Si(111) substrate.

  4. Microstructure and optical response optimization of Ge/Si quantum dots transformed from the sputtering-grown Ge thin film by manipulating the thermal annealing.

    Science.gov (United States)

    Shu, Qijiang; Wang, Rongfei; Yang, Jie; Zhang, Mingling; Zeng, Tianjian; Sun, Tao; Wang, Chong; Yang, Yu

    2018-03-02

    A series of zero-dimensional Ge/Si quantum dots (QDs) samples are fabricated by inducing the transformation from the two-dimensional Ge thin film, which is grown by the traditional direct current (DC) magnetron sputtering, via regulating the annealing process. The QD density increases sharply after the post rapid thermal annealing (PRTA). The observations of atomic force microscopy (AFM) and Raman spectroscopy suggest that the good morphology of Ge QDs results from an appropriate thermodynamics and kinetics surrounding shaped by the cooperative interaction of the Ge-Si lattice mismatch, the film's surface temperature, and the difference in thermal expansion coefficients between Ge and Si. The photoluminescence (PL) peaks of Ge QDs are detected in monolayer Ge QDs with ultrahigh density at 17 K. The Metal-Ge/Si QDs-Metal (MGM) photodetector fabricated from the ultrahigh-density QDs sample exhibits a relatively high current gain, absolute photoelectric responsivity, and internal quantum efficiency (IQE). Our results demonstrate that the high-quality Ge QDs with strong light absorption and quantum confinement effect can be realized by modulating DC magnetron sputtering and the PRTA process. This paves the way for realizing silicon-based optoelectronic devices with high performance by the traditional, relatively low-cost, and large-scale production nanomaterial fabricating method.

  5. Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Ezzedini, Maher, E-mail: maher.ezz7@gmail.com [Monastir University, Laboratoire de Micro-Optoélectroniques et Nanostructures (Tunisia); Sfaxi, Larbi, E-mail: sfaxi.larbi@yahoo.fr [Sousse University, High School of Sciences and Technology of Hammam Sousse (Tunisia); M’Ghaieth, Ridha, E-mail: ridha.mghaieth@fsm.rnu.tn [Monastir University, Laboratoire de Micro-Optoélectroniques et Nanostructures (Tunisia)

    2017-01-15

    Mg-doped InAlAs and InGaAs films were grown at 560 °C lattice matched to InP semi-insulting substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp{sub 2}Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD), and secondary ion mass (SIMS) were the tools used in this work. The crystalline quality and the n-p conversion of the InAlAs and InGaAs/Mg films are described and discussed in relation to the Cp{sub 2}Mg flow. Distinguishing triple emission peaks in PL spectra is observed and seems to be strongly dependent on the Cp{sub 2}Mg flow. SIMS is employed to analyze the elements in the epitaxial layers. The variation of indium and magnesium components indicates a decrease of magnesium incorporation during the growth of InAlAs layers leading to a contracted lattice. In addition, the magnesium incorporation in the InGaAs lattice during growth has been confirmed by SIMS.

  6. AgGaSe2 thin films grown by chemical close-spaced vapor transport for photovoltaic applications: structural, compositional and optical properties.

    Science.gov (United States)

    Merschjann, C; Mews, M; Mete, T; Karkatzinou, A; Rusu, M; Korzun, B V; Schorr, S; Schubert-Bischoff, P; Seeger, S; Schedel-Niedrig, Th; Lux-Steiner, M-Ch

    2012-05-02

    Thin films of chalcopyrite AgGaSe(2) have been successfully grown on glass and glass/molybdenum substrates using the technique of chemical close-spaced vapor transport. The high crystallinity of the samples is confirmed by grazing-incidence x-ray diffraction, scanning and transmission electron microscopy, and optical transmission/reflection spectroscopy. Here, two of the three expected direct optical bandgaps are found at 1.77(2) and 1.88(6) eV at 300 K. The lowest bandgap energy at 4 K is estimated to be 1.82(3) eV. Photoluminescence spectroscopy has further revealed the nature of the point defects within the AgGaSe(2), showing evidence for the existence of very shallow acceptor levels of 5(1) and 10(1) meV, and thus suggesting the AgGaSe(2) phase itself to exhibit a p-type conductivity. At the same time, electrical characterization by Hall, Seebeck and four-point-probe measurements indicate properties of a compensated semiconductor. The electrical properties of the investigated thin films are mainly influenced by the presence of Ag(2)Se and Ga(2)O(3) nanometer-scaled surface layers, as well as by Ag(2)Se inclusions in the bulk and Ag clusters at the layers' rear side. © 2012 IOP Publishing Ltd

  7. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

    Science.gov (United States)

    Shida, K.; Takeuchi, S.; Tohei, T.; Miyake, H.; Hiramatsu, K.; Sumitani, K.; Imai, Y.; Kimura, S.; Sakai, A.

    2018-04-01

    This work quantitatively assessed the three-dimensional distribution of crystal lattice distortions in an epitaxial AlN thick film grown on a trench-patterned template, using nanobeam X-ray diffraction. Position-dependent ω-2θ-φ mapping clearly demonstrated local tilting, spacing and twisting of lattice planes as well as fluctuations in these phenomena on a sub-micrometer scale comparable to the pitch of the trench-and-terrace patterning. Analysis of the crystal lattice distortion in the depth direction was performed using a newly developed method in which the X-ray nanobeam diffracted from the sample surface to specific depths can be selectively detected by employing a Pt wire profiler. This technique generated depth-resolved ω-2θ-φ maps confirming that fluctuations in lattice plane tilting and spacing greatly depend on the dislocation distribution and the history of the AlN epitaxial growth on the trench-patterned structure. It was also found that both fluctuations were reduced on approaching the AlN surface and, in particular, were sharply reduced at specific depths in the terrace regions. These sharp reductions are attributed to the formation of sacrificial zones with degraded crystal quality around the trenches and possibly lead to raising the crystal quality near the surface of the AlN film.

  8. Structural properties of Bi{sub 2−x}Mn{sub x}Se{sub 3} thin films grown via molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Babakiray, Sercan; Johnson, Trent A.; Borisov, Pavel; Holcomb, Mikel B.; Lederman, David, E-mail: david.lederman@mail.wvu.edu [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Marcus, Matthew A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Tarafder, Kartick [Department of Physics, BITS-Pilani Hyderabad Campus, Secunderabad, Andhra Pradesh 500078 (India)

    2015-07-28

    The effects of Mn doping on the structural properties of the topological insulator Bi{sub 2}Se{sub 3} in thin film form were studied in samples grown via molecular beam epitaxy. Extended x-ray absorption fine structure measurements, supported by density functional theory calculations, indicate that preferential incorporation occurs substitutionally in Bi sites across the entire film volume. This finding is consistent with x-ray diffraction measurements which show that the out of plane lattice constant expands while the in plane lattice constant contracts as the Mn concentration is increased. X-ray photoelectron spectroscopy indicates that the Mn valency is 2+ and that the Mn bonding is similar to that in MnSe. The expansion along the out of plane direction is most likely due to weakening of the Van der Waals interactions between adjacent Se planes. Transport measurements are consistent with this Mn{sup 2+} substitution of Bi sites if additional structural defects induced by this substitution are taken into account.

  9. Intrinsic microstrains and normal-phase flicker noise in YBa2Cu3O7 epitaxial films grown on various substrates

    International Nuclear Information System (INIS)

    Bobyl, A.V.; Gaevski, M.E.; Karmanenko, S.F.; Kutt, R.N.; Suris, R.A.; Khrebtov, I.A.; Tkachenko, A.D.; Morosov, A.I.

    1997-01-01

    Local measurements of structural characteristics such as intrinsic microstrain along the c axis of the lattice var-epsilon=δc/c and its mean square fluctuation left-angle var-epsilon right-angle, oxygen deficiency x, cation composition, etc. were performed on epitaxial YBa 2 Cu 3 O 7 films grown on various substrates (MgO, BaSrTiO 3 /MgO, SrTiO 3 , LaAlO 3 , ZrO 2 /Si, Al 2 O 3 ). A number of film microstrips were fabricated and the normalized flicker noise intensity (Hooge parameter α) and the resistivity ρ at 300 K were measured at each characterized point. A theoretical model was developed that explains the observed first growth of α with left-angle var-epsilon right-angle and the well-known high level of the normal-phase flicker noise in various high temperature superconducting compounds. Comparison of the experimental and simulated dependence of α on left-angle var-epsilon right-angle, frequency, and temperature permits one to determine numerically the theoretical parameters of the double-well potential with minima located at the chain (O1) and empty (O5) oxygen lattice positions of the CuO plane. copyright 1997 American Institute of Physics

  10. Composition dependence of the ferroelectric properties of lanthanum-modified bismuth titanate thin films grown by using pulsed-laser deposition

    CERN Document Server

    Bu, S D; Park, B H; Noh, T W

    2000-01-01

    Lanthanum-modified bismuth titanate, Bi sub 4 sub - sub x La sub x Ti sub 3 O sub 1 sub 2 (BLT), thin films with a La concentration of 0.25<=x<=1.00 were grown on Pt/Ti/SiO sub 2 /Si substrates by using pulsed-laser deposition. The BLT films showed well-saturated polarization-electric field curves whose remnant polarizations were 16.1 mu C/cm sup 2 , 27.8 mu C/cm sup 2 , 19.6 mu C/cm sup 2 , and 2.7 mu C/cm sup 2 , respectively, for x=0.25, 0.05, 0.75, and 1.00. The fatigue characteristics became better with increasing x up to 0.75. The Au/BLT/Pt capacitor with a La concentration of 0.50 showed an interesting dependence of the remanent polarization on the number of repetitive read/write cycles. On the other hand, the capacitor with a La concentration of 0.75 showed fatigue-free characteristics.

  11. Thermoluminescent dosimetry and of optically stimulated luminescence of diamond films grown up by the chemical vapor deposition technique exposed to beta radiation

    International Nuclear Information System (INIS)

    Melendrez A, R.; Barboza F, M.

    2002-01-01

    A study of the dosimetric properties through the thermoluminescence (Tl) and Optically stimulated luminescence (Lobe) in diamond films grown up by the chemical vapor deposition (Dq) techniques was realized.The films under study have thickness of 6, 12, 180 and 500 microns. The dose range was from 0 to 1.5 KGy, observing for the case of the thermoluminescent dosimetry a linear behavior in the range 0-300 Gy and a supra linearity effect in the range from 300-1500 Gy. For the case of the dosimetry by means of LOE a linear behavior in the range (0-300 Gy) without be enough for the saturation was observed, although some samples exhibit a linear behavior until 1500 Gy (6 microns). The irradiation was realized with a source of Strontium 90 of (40 mCi) and the photoestimulation for realizing the measures of LOE was realized using diodes emitting of laser light (470 nm) which generate until 50 MW/cm 2 . The Tl peak which was used to realize the dosimetry such Tl as LOE was that located around 340 C degrees in the brilliance curve which presents another peaks centered around of 110, 190, and 340 C degrees, depending on the film. It was realized a study of the Tl signal drop and it was observed that after 3 hours the signal was stable reaching a decay of 15 %. the analysis of the drop in the Tl signal, immediately after to irradiate and after to photoestimulate with the blue light laser for observing the LOE, indicated that exists a fall in all the Tl peaks, decaying in greater proportion those of more low temperature. (Author)

  12. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Jany, Ch.

    1998-01-01

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead η to decrease. In contrast, η was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp 2 phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  13. Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

    Science.gov (United States)

    Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

    2016-06-22

    An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

  14. Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z. P.; Song, Y. X.; Li, Y. Y.; Wu, X. Y.; Zhu, Z. Y. S.; Han, Y.; Zhang, L. Y.; Huang, H.; Wang, S. M.

    2017-10-01

    GeSn alloy with 7.68% Sn concentration grown by molecular beam epitaxy has been rapidly annealed at different temperatures from 300°C to 800°C. Surface morphology and roughness annealed below or equal to 500°C for 1 min have no obvious changes, while the strain relaxation rate increasing. When the annealing temperature is above or equal to 600°C, significant changes occur in surface morphology and roughness, and Sn precipitation is observed at 700°C. The structural properties are analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction. The lateral correlation length and the mosaic spread are extracted for the epi-layer peaks in the asymmetric (224) diffraction. The most suitable annealing temperature to improve both the GeSn lattice quality and relaxation rate is about 500°C.

  15. State of the art and prospective of large scale applications of YBCO thick films grown on metallic substrates

    International Nuclear Information System (INIS)

    Boffa, Vincenzo

    1997-09-01

    In the framework of the high temperature superconducting materials, YBa 2 Cu 3 O 7 (YBCO) shows very interesting intrinsic superconducting transport properties at temperature higher than the liquid nitrogen temperature. These properties are very important in large scale applications: transport of energy, magnets, transformers, etc. Unfortunately the potential of this material cannot be achieved today, since it is very difficult to manufacture YBCO based tapes or cables. In the last years several groups have tried to overcome the problems with new fabrication techniques. In the present report the state of the art and the prospective in the field of YBCO film fabrication on metallic substrates are presented

  16. Optical and structural properties of Pr:GGGcrystalline thin film waveguides grown by pulsed-laser deposition

    Czech Academy of Sciences Publication Activity Database

    Lančok, Ján; Garapon, C.; Jelínek, Miroslav; Mugnier, J.; Brenier, R.

    2005-01-01

    Roč. 81, - (2005), s. 1477-1483 ISSN 0947-8396 R&D Projects: GA ČR(CZ) GP106/01/D017 Grant - others:European Community- Marie Curie Fellowhip(XE) HP MF-CT-2001-01492; CLYME(FR) GEMPPM-UMR5510 CNRS-INSA Institutional research plan: CEZ:AV0Z10100522 Keywords : Pr:GGG * thin films * waveguide Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.990, year: 2005

  17. Absence of traditional magnetoresistivity mechanisms in Sr2FeMoO6 thin films grown on SrTiO3, MgO and NdGaO3 substrates.

    Science.gov (United States)

    Saloaro, M; Majumdar, S; Huhtinen, H; Paturi, P

    2012-09-12

    Magnetoresistive double perovskite Sr(2)FeMoO(6) thin films were grown with two different deposition pressures on SrTiO(3), MgO and NdGaO(3) substrates by pulsed laser deposition and thorough structural, magnetic and magneto-transport characterization was made. According to x-ray diffraction, all the films were phase pure and fully textured. Indication of substrate dependent strain and low angle grain boundaries was found, especially in films on MgO. Both the deposition pressure and the choice of the substrate have a strong influence on the saturation magnetization, M(s), and Curie temperature, T(C). The structural and magnetic data indicate the presence of anti-site disorder (ASD) in the films. The temperature dependence of resistivity showed semiconductive behaviour at temperatures below 100 K and metallic behaviour at higher temperatures. The semiconductive behaviour was found to increase with increasing ASD. In good quality films, up to 12% negative magnetoresistance (MR) was observed and films grown on MgO and NGO substrates also showed low field MR. However, the most significant observation of this study was that the magnetoresistivity of these Sr(2)FeMoO(6) thin films could not be explained with any traditional MR mechanism, but carried the clear signature of superposition of different mechanisms, in particular low angle grain boundary tunnelling and suppression of antiferromagnetically ordered domains under a magnetic field.

  18. Appearance of large crystalline domains in VO{sub 2} films grown on sapphire (001) and their phase transition characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Azhan, Nurul Hanis; Su, Kui; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont 37200 Tours (France)

    2015-06-28

    We report the first observation of large crystalline domains of several μm-size in VO{sub 2} films deposited on Al{sub 2}O{sub 3} (001) substrates by rf-biased reactive sputtering technique. The large crystalline domains, dominated with random in-plane oriented growth of (011){sub M1}-orientation, appear only under adequate substrate biasing, such as 10 W, while most biasing conditions result in conventional nanosized grains of highly oriented (010){sub M1}-orientation. Two temperature-controlled analyses, x-ray diffraction and micro-Raman spectroscopy, have revealed that some parts of large crystalline domains undergo intermediate monoclinic (M2) phase during the thermally-induced structural phase transition from monoclinic (M1) to rutile-tetragonal (R) phase. As an effect of the appearance of large crystalline domains, the film showed in-plane tensile stress, resulting in high T{sub IMT} of 69 °C due to the elongation of the V-V distance in its low-temperature monoclinic phase.

  19. Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.

    Science.gov (United States)

    Zhong, Aihua; Fan, Ping; Zhong, Yuanting; Zhang, Dongping; Li, Fu; Luo, Jingting; Xie, Yizhu; Hane, Kazuhiro

    2018-02-13

    Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

  20. Structural and magnetic properties of Co-doped ZnO thin films grown by ultrasonic spray pyrolysis method

    Science.gov (United States)

    Baghdad, R.; Lemée, N.; Lamura, G.; Zeinert, A.; Hadj-Zoubir, N.; Bousmaha, M.; Bezzerrouk, M. A.; Bouyanfif, H.; Allouche, B.; Zellama, K.

    2017-04-01

    Cobalt-doped ZnO thin films with several different percentage of Co from 0 up to 15 at% were synthesized via a cheap, simple and versatile method i.e. ultrasonic spray pyrolysis at atmospheric pressure and a substrate temperature of 350 °C. The structure of the as-prepared samples was characterized by X-ray diffraction (XRD), Raman spectroscopy and FTIR. The Co-doping effect is revealed by the presence of three additional peaks around 235, 470 and 538 cm-1 respect to the Raman spectra of the unsubstituted film. Fourier transform infrared spectroscopy (FTIR) put in evidence the decrease of the bond force constant f with increasing Co-doping. By ultra-violet visible near infrared (UV-Vis-NIR) spectroscopy on Co-doped samples it was possible to show the presence of additional absorption bands at approximately 570, 620 and 660 nm suggesting that Co2+ ions do not change their oxidation when substituted to zinc and the ZnO lattice does not change its wurtzite structure as well. Finally, all our samples exhibit a paramagnetic behavior without any trace of intrinsic room temperature ferromagnetism.

  1. Synthesis and characterization of MoB2−x thin films grown by nonreactive DC magnetron sputtering

    International Nuclear Information System (INIS)

    Malinovskis, Paulius; Lewin, Erik; Jansson, Ulf; Palisaitis, Justinas; Persson, Per O. Å.

    2016-01-01

    DC magnetron sputtering was used to deposit molybdenum boride thin films for potential low-friction applications. The films exhibit a nanocomposite structure with ∼10 nm large MoB 2−x (x > 0.4) grains surrounded by a boron-rich tissue phase. The preferred formation of the metastable and substoichiometric hP3-MoB 2 structure (AlB 2 -type) is explained with kinetic constraints to form the thermodynamically stable hR18-MoB 2 phase with a very complex crystal structure. Nanoindentation revealed a relatively high hardness of (29 ± 2) GPa, which is higher than bulk samples. The high hardness can be explained by a hardening effect associated with the nanocomposite microstructure where the surrounding tissue phase restricts dislocation movement. A tribological study confirmed a significant formation of a tribofilm consisting of molybdenum oxide and boron oxide, however, without any lubricating effects at room temperature.

  2. Enhancement of coercivity with reduced grain size in CoCrPt film grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Liang, Q.; Hu, X.F.; Li, H.Q.; He, X.X.; Wang, Xiaoru; Zhang, W.

    2006-01-01

    We report a pulsed laser deposition (PLD) growth of VMn/CoCrPt bilayer with a magnetic coercivity (H c ) of 2.2 kOe and a grain size of 12 nm. The effects of VMn underlayer on magnetic properties of CoCrPt layer were studied. The coercivity, H c , and squareness, S, of VMn/CoCrPt bilayer, is dependent on the thickness of VMn. The grain size of the CoCrPt film can also be modified by laser parameters. High laser fluence used for CoCrPt deposition produces a smaller grain size. Enhanced H c and reduced grain size in VMn/CoCrPt is explained by more pronounced surface phase segregation during deposition at high laser fluence

  3. Synthesis and Characterization of ZnO Nanoflowers Grown on AlN Films by Solution Deposition

    International Nuclear Information System (INIS)

    Hai-Yong, Gao; Fa-Wang, Yan; Yang, Zhang; Jin-Min, Li; Yi-Ping, Zeng

    2008-01-01

    ZnO nanoflowers are synthesized on AlN films by solution method. The synthesized nanoflowers are composed of nanorods, which are pyramidal and grow from a central point, thus forming structures that are flower-shaped as a whole. The nanoflowers have two typical morphologies: plate-like and bush-like. The XRD spectrum corresponds to the side planes of the ZnO nanorods made up of the nanoflowers. The micro-Raman spectrum of the ZnO nanoflowers exhibits the E 2 (high) mode and the second order multiple-phonon mode. The photoluminescence spectrum of the ZnO nanoflowers exhibits ultraviolet emission centred at 375 nm and a broad green emission centred at 526 nm

  4. Misfit dislocations of anisotropic magnetoresistant Nd0.45Sr0.55MnO3 thin films grown on SrTiO3 (1 1 0) substrates

    International Nuclear Information System (INIS)

    Tang, Y.L.; Zhu, Y.L.; Meng, H.; Zhang, Y.Q.; Ma, X.L.

    2012-01-01

    Nd 0.45 Sr 0.55 MnO 3 is an A-type antiferromagnetic manganite showing obvious angular-dependent magnetoresistance, which can be tuned by misfit strain. The misfit strain relaxation of Nd 0.45 Sr 0.55 MnO 3 thin films is of both fundamental and technical importance. In this paper, microstructures of epitaxial Nd 0.45 Sr 0.55 MnO 3 thin films grown on SrTiO 3 (1 1 0) substrates by pulsed laser deposition were investigated by means of (scanning) transmission electron microscopy. The Nd 0.45 Sr 0.55 MnO 3 thin films exhibit a two-layered structure: a continuous perovskite layer epitaxial grown on the substrate followed by epitaxially grown columnar nanostructures. An approximately periodic array of misfit dislocations is found along the interface with line directions of both 〈1 1 1〉 and [0 0 1]. High-resolution (scanning) transmission electron microscopy reveals that all the misfit dislocations possess a〈1 1 0〉-type Burgers vectors. A formation mechanism based on gliding or climbing of the dislocations is proposed to elucidate this novel misfit dislocation configuration. These misfit dislocations have complex effects on the strain relaxation and microstructure of the films, and thus their influence needs further consideration for heteroepitaxial perovskite thin film systems, especially for films grown on substrates with low-symmetry surfaces such as SrTiO 3 (1 1 0) and (1 1 1), which are attracting attention for their potentially new functions.

  5. Performance of Erbium-doped TiO2 thin film grown by physical vapor deposition technique

    Science.gov (United States)

    Lahiri, Rini; Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Chinnamuthu, P.; Mondal, Aniruddha

    2017-09-01

    Undoped and Erbium-doped TiO2 thin films (Er:TiO2 TFs) were fabricated on the n-type Si substrate using physical vapour deposition technique. Field emission scanning electron microscope showed the morphological change in the structure of Er:TiO2 TF as compared to undoped sample. Energy dispersive X-ray spectroscopy (EDX) confirmed the Er doping in the TiO2 thin film (TF). The XRD and Raman spectrum showed the presence of anatase phase TiO2 and Er2O3 in the Er:TiO2 TF. The Raman scattering depicted additional number of vibrational modes for Er:TiO2 TF due to the presence of Er as compared to the undoped TiO2 TF. The UV-Vis absorption measurement showed that Er:TiO2 TF had approximately 1.2 times more absorption over the undoped TiO2 TF in the range of 300-400 nm. The main band transition, i.e., the transition between the oxygen (2p) state and the Ti (3d) state was obtained at 3.0 eV for undoped TiO2 and at 3.2 eV for Er:TiO2 TF, respectively. The photo responsivity measurement was done on both the detectors, where Er:TiO2 TF detector showed better detectivity ( D *), noise equivalent power and temporal response as compared to undoped detector under ultra-violet illumination.

  6. Epitaxial single-crystal thin films of MnxTi1-xO2-δ grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

    2015-02-01

    Epitaxial rutile-structured single-crystal MnxTi1-xO2-δ films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the β-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

  7. Incorporation of N in TiO{sub 2} films grown by DC-reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Serio, S. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Melo Jorge, M.E. [CCMM, Departamento de Quimica e Bioquimica, Faculdade de Ciencias da Universidade de Lisboa, Campo Grande C8, 1749-016 Lisboa (Portugal); Nunes, Y. [CEFITEC, Departamento de Fisica, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Barradas, N.P. [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico e Nuclear and CFNUL, E.N. 10, Sacavem 2686-953 (Portugal); Munnik, F. [Helmholtz-Zentrum Dresden-Rossendorf (Germany)

    2012-02-15

    Photocatalytic properties of TiO{sub 2} are expected to play an important role on emerging technologies based on OH radicals to destroy harmful nonbiodegradable organic and inorganic contaminants in water. The drawback is the wide band gap of TiO{sub 2} (3.2 eV) limiting its use to the UV part of electromagnetic spectrum under sunlight. Therefore, modifications of TiO{sub 2} are needed to tune the gap in order to allow an efficient use of the entire solar spectrum. One possibility is N-doping of TiO{sub 2} to make the photocatalytic activity possible under visible light and more suitable for water treatment. In our study nitrogen-doped TiO{sub 2} (TiO{sub 2-x}N{sub x}) films were deposited by DC-reactive magnetron sputtering using a dual-magnetron co-deposition apparatus on unheated glass and silicon substrates using a pure titanium target. The depth profile of nitrogen was measured with heavy ion elastic recoil detection analysis combined with Rutherford backscattering spectrometry (RBS) and correlated with the optical and structural properties obtained by UV-VIS spectroscopy and X-ray diffraction (XRD).

  8. Solution-grown small-molecule organic semiconductor with enhanced crystal alignment and areal coverage for organic thin film transistors

    Directory of Open Access Journals (Sweden)

    Sheng Bi

    2015-07-01

    Full Text Available Drop casting of small-molecule organic semiconductors typically forms crystals with random orientation and poor areal coverage, which leads to significant performance variations of organic thin-film transistors (OTFTs. In this study, we utilize the controlled evaporative self-assembly (CESA method combined with binary solvent system to control the crystal growth. A small-molecule organic semiconductor,2,5-Di-(2-ethylhexyl-3,6-bis(5″-n-hexyl-2,2′,5′,2″]terthiophen-5-yl-pyrrolo[3,4-c]pyrrole-1,4-dione (SMDPPEH, is used as an example to demonstrate the effectiveness of our approach. By optimizing the double solvent ratios, well-aligned SMDPPEH crystals with significantly improved areal coverage were achieved. As a result, the SMDPPEH based OTFTs exhibit a mobility of 1.6 × 10−2 cm2/V s, which is the highest mobility from SMDPPEH ever reported.

  9. Biochar filters reduced the toxic effects of nickel on tomato (Lycopersicon esculentum L.) grown in nutrient film technique hydroponic system.

    Science.gov (United States)

    Mosa, Ahmed; El-Banna, Mostafa F; Gao, Bin

    2016-04-01

    This work used the nutrient film technique to evaluate the role of biochar filtration in reducing the toxic effects of nickel (Ni(2+)) on tomato growth. Three hydroponic treatments: T1 (control), T2 (with Ni(2+)), and T3 (with Ni(2+) and biochar) were used in the experiments. Scanning electron microscopy equipped with energy dispersive X-ray spectroscopy and Fourier transform spectroscopy was used to characterize the pre- and post-treatment biochar samples. The results illustrated that precipitation, ion exchange, and complexation with surface functional groups were the potential mechanisms of Ni(2+) removal by biochar. In comparison to the control, the T2 treatment showed severe Ni-stress with alterations in cell wall structure, distortions in cell nucleus, disturbances in mitochondrial system, malformations in stomatal structure, and abnormalities in chloroplast structure. The biochar filters in T3 treatment reduced dysfunctions of cell organelles in root and shoot cells. Total chlorophyll concentration decreased by 41.6% in T2 treatment. This reduction, however, was only 20.8% due to the protective effect of the biochar filters. The presence of Ni(2+) in the systems reduced the tomato fruit yield 58.5% and 31.9% in T2 and T3, respectively. Nickel concentrations reached the toxic limit in roots, shoots, and fruits in T2, which were not observed in T3. Biochar filters in T3 also minimized the dramatic reductions in nutrients concentration in roots, shoots, and fruits, which occurred in T2 treatment due to the severe Ni-stress. Findings from this work suggested that biochar filters can be used on farms as a safeguard for wastewater irrigation. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. Carbon nanotube network film directly grown on carbon cloth for high-performance solid-state flexible supercapacitors

    International Nuclear Information System (INIS)

    Zhou, Cheng; Liu, Jinping

    2014-01-01

    Carbon nanotubes (CNTs) have received increasing attention as electrode materials for high-performance supercapacitors. We herein present a straightforward method to synthesize CNT films directly on carbon cloths as electrodes for all-solid-state flexible supercapacitors (AFSCs). The as-made highly conductive electrodes possess a three-dimensional (3D) network architecture for fast ion diffusion and good flexibility, leading to an AFSC with a specific capacitance of 106.1 F g −1 , an areal capacitance of 38.75 mF cm −2 , an ultralong cycle life of 100 000 times (capacitance retention: 99%), a good rate capability (can scan at 1000 mV s −1 , at which the capacitance is still ∼37.8% of that at 5 mV s −1 ), a high energy density (2.4 μW h cm −2 ) and a high power density (19 mW cm −2 ). Moreover, our AFSC maintains excellent electrochemical attributes even with serious shape deformation (bending, folding, etc), high mechanical pressure (63 kPa) and a wide temperature window (up to 100 ° C). After charging for only 5 s, three such AFSC devices connected in series can efficiently power a red round LED for 60 s. Our work could pave the way for the design of practical AFSCs, which are expected to be used for various flexible portable/wearable electronic devices in the future. (paper)

  11. Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Hayashi, Y.; Yu, G.; Rahman, M. M.; Krishna, K. M.; Soga, T.; Jimbo, T.; Umeno, M.

    2001-01-01

    Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH 4 as the source of carbon and with different nitrogen flow rates (N 2 /CH 4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp 2 -bonded carbon or a change in sp 2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. [copyright] 2001 American Institute of Physics

  12. Atomically resolved interface structure of a vanadium sesquioxide(0 0 0 1) film grown on Cu 3Au(0 0 1)

    Science.gov (United States)

    Niehus, H.; Calderon, H. A.; Freitag, B.; Stavale, F.; Achete, C. A.

    2008-06-01

    Heterointerfaces between oxides and metals are of wide-ranging importance. High resolution transmission electron microscopy (HRTEM) with spherical aberration (Cs) image correction has been used to unravel the metal-oxide interface on an atomic scale. The method is exemplified at the interface of a thin two-dimensional monocrystalline film of V 2O 3(0 0 0 1) grown on a Cu 3Au(0 0 1) sample. At the interface an extra vanadium monolayer is introduced between the part of the Cu 3Au substrate and the oxide layer. The location of the extra vanadium is not related with the V 2O 3 crystallography but instead connected to the Cu 3Au(0 0 1) metal side. The oxide layer ends at the interface with the quasi-hexagonal close packed oxygen layer of bulk truncated V 2O 3(0 0 0 1). The stacking sequence of oxygen columns follows visibly the vanadium oxide part and is directionally decoupled from the Cu 3Au(0 0 1)-V region. The HRTEM images show not only the position of the metal atoms but clearly also the oxygen sites which makes this method well suited for the investigation of metal oxide interfaces.

  13. Correlation between atomic structure and magnetic properties of La0.7Ca0.3MnO3 thin films grown on SrTiO3 (1 0 0)

    International Nuclear Information System (INIS)

    Rubio-Zuazo, J.; Andres, A. de; Taboada, S.; Prieto, C.; Martinez, J.L.; Castro, G.R.

    2005-01-01

    The crystallographic structure of La 0.7 Ca 0.3 MnO 3 (LCMO) ultra-thin films grown on SrTiO 3 (0 0 1) has been investigated by surface X-ray diffraction (SXD) and the correlation between their transport and magnetic properties and crystallographic structure is discussed. LCMO thin films in a thickness range between 2.4 and 27 nm were grown by DC-sputtering on SrTiO 3 (0 0 1). We distinguish two different crystallographic structures associated to the 2.4 and 27 nm thin films, respectively. The 27 nm film structure corresponds to a tetragonal perovskite (space group Pbnm), as has been reported for bulk LCMO. For the 2.4 nm film the La/Ca ions are located at the regular position of an ideal perovskite and the MnO 6 octahedrons are aligned along the c-axis. The MnO 2 stacking layer (basal plane) is distorted and coplanar to the a-b crystallographic axis with an anti-correlation between octahedron layers. This observed distortion is not compatible with the Pbnm space group. The new phase, which cannot be excluded to coexist at the interface of thicker films, can be described, as an example, through an I4/mcm or Pbcn space group. Based on the observed structure, plausible models to explain their transport and magnetic behaviour are proposed. For the 2.4 nm film, an octahedron in-plane (basal plane) distortion induced by the substrate is observed. Thicker films behave structurally and magnetically as bulk-like materials

  14. An investigation of the insertion of the cations H{sup +}, Na{sup +}, K{sup +} on the electrochromic properties of the thermally evaporated WO{sub 3} thin films grown at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Patel, K.J. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Panchal, C.J., E-mail: cjpanchal_msu@yahoo.com [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Desai, M.S. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat (India); Mehta, P.K. [Physics Department, Faculty of Science, M.S. University of Baroda, Vadodara 390002, Gujarat (India)

    2010-11-01

    The phenomenon of electrochromism in tungsten trioxide (WO{sub 3}) thin films has recently attained considerable interest due to their enormous applications in inorganic thin film electrochromic devices. We have investigated the compositional, optical, and electrochromic properties of the WO{sub 3} thin films grown at different substrate temperatures by the thermal evaporation of WO{sub 3} powder. The thin films were characterized using X-ray diffraction (XRD), X-ray photo-emission spectroscopy (XPS), and electrochemical techniques. The XPS analysis suggested that the oxygen to tungsten (O/W) ratio decreases, i.e., the oxygen deficiency increases, on increasing the substrate temperature up to 500 deg. C. The electrochemical analysis provided a comparative study of the coloration efficiency (CE) of the WO{sub 3} thin films intercalated with three different ions viz. H{sup +}, Na{sup +}, and K{sup +}. The effect of the variation of the substrate temperature on the CE and the switching time have also been investigated for the WO{sub 3} thin films intercalated with H{sup +} ions; the thin films deposited at RT and intercalated with H{sup +} ions are found to possess adequate electrochromic properties viz. CE and switching time from device point of view.

  15. Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Sultana, Jenifar; Das, Anindita [Centre for Research in Nanoscience and Nanotechnology (CRNN), Kolkata 700098 (India); Das, Avishek [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India); Saha, Nayan Ranjan [Department of Polymer Science and Technology, University of Calcutta, Kolkata 700009 (India); Karmakar, Anupam [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India); Chattopadhyay, Sanatan, E-mail: scelc@caluniv.ac.in [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India)

    2016-08-01

    In this work, the CuO nano-powder has been synthesized by employing chemical bath deposition technique for its subsequent use to grow ultrathin film (20 nm) of p-CuO on n-Si substrate for the fabrication of p-CuO/n-Si hetero-junction diodes. The thin CuO film has been grown by employing vapour-liquid-solid method. The crystalline structure and chemical phase of the film are characterized by employing field-emission scanning electron microscopy and X-ray diffraction studies. Chemical stoichiometry of the film has been confirmed by using energy dispersive X-ray spectroscopy. The potential for photovoltaic applications of such films is investigated by measuring the junction current-voltage characteristics and by extracting the relevant parameters such as open circuit photo-generated voltage, short circuit current density, fill-factor and energy conversion efficiency. - Highlights: • Synthesis of CuO nano-powder by CBD method • Growth of ultra-thin film of CuO by employing VLS method for the first time • Physical and electrical characterization of such films for photovoltaic applications • Estimation of energy conversion efficiency of the p-CuO/n-Si p-n junction solar cell.

  16. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yodo, T.; Nakamura, T.; Kouyama, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Asahi-ku, Ohmiya, Osaka 535-8585 (Japan); Harada, Y. [Applied Physics, Osaka Institute of Technology, 5-16-1, Asahi-ku, Ohmiya, Osaka 535-8585 (Japan)

    2005-05-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide ({beta}-In{sub 2}O{sub 3}) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal ({alpha})-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although {beta}-In{sub 2}O{sub 3} grains with wide band-gap energy were formed in In film by N{sub 2} annealing, they were not easily formed in N{sub 2}-annealed InN films. Even if they were not detected in N{sub 2}-annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]{<=}0.5%). Although [O]{proportional_to}1% could be estimated by investigating In{sub 2}O{sub 3} grains formed in N{sub 2}-annealed InN films, [O]{<=}0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In{sub 2}O{sub 3} grains formed by H{sub 2} annealing with higher reactivity with InN and O{sub 2}, using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

    Science.gov (United States)

    Li, Zengcheng; Feng, Bo; Deng, Biao; Liu, Legong; Huang, Yingnan; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Sun, Qian; Wang, Huaibing; Yang, Xiaoli; Yang, Hui

    2018-04-01

    This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF-LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improvement of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface. Project supported by the National Key R&D Program (Nos. 2016YFB0400100, 2016YFB0400104), the National Natural Science Foundation of China (Nos. 61534007, 61404156, 61522407, 61604168, 61775230), the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (No. QYZDB-SSW-JSC014), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the Key R&D Program of Jiangsu Province (No. BE2017079), the Natural Science Foundation of Jiangsu Province (No. BK20160401), and the China Postdoctoral Science Foundation (No. 2016M591944). This work was also supported by the Open Fund of the State Key Laboratory of Luminescence and Applications (No. SKLA-2016-01), the Open Fund of the State Key Laboratory on Integrated Optoelectronics (Nos. IOSKL2016KF04, IOSKL2016KF07), and the Seed Fund from SINANO

  18. Thick Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} Films Grown by Liquid-Phase Epitaxy for Josephson THz Applications.

    Energy Technology Data Exchange (ETDEWEB)

    Simsek, Y.; Vlasko-Vlasov, V.; Koshelev, A. E.; Benseman, T.; Hao, Y.; Kesgin, I.; Claus, H.; Pearson, J.; Kwok, W. -K.; Welp, U.

    2017-11-27

    Theoretical and experimental studies of intrinsic Josephson junctions that naturally occur in high-Tc superconducting Bi2Sr2CaCu2O8+δ (Bi-2212) have demonstrated their potential for novel types of compact devices for the generation and sensing of electromagnetic radiation in the THz range. Here, we show that the THz-on-a-chip concept may be realized in liquid phase epitaxial-grown (LPE) thick Bi-2212 films. We have grown μm-thick Bi-2212 LPE films on MgO substrates. These films display excellent c-axis alignment and single crystal grains of about 650 × 150 μm2 in size. A branched current-voltage characteristic was clearly observed in c-axis transport, which is a clear signature of underdamped intrinsic Josephson junctions, and a prerequisite for THz-generation. We discuss LPE growth conditions allowing improvement of the structural quality and superconducting properties of Bi-2212 films for THz applications.

  19. Structural and magnetic properties of La0.7Sr0.3MnO3 ferromagnetic thin film grown on PMN-PT by sol–gel method

    Directory of Open Access Journals (Sweden)

    Jing Zhang

    2017-08-01

    Full Text Available We report the preparation of epitaxial La0.7Sr0.3MnO3 thin films grown on (001-oriented 0.72Pb(Mg1∕3Nb2∕3O3-0.28PbTiO3 substrates by the sol–gel technique. The phase structure, magnetic properties and magnetoresistance of the samples are investigated by using high solution X-ray diffraction, atomic force microscopy, physical property measurement system, respectively. The La0.7Sr0.3MnO3 thin films display a well-defined hysteresis loop and typical ferromagnetism behavior at lower temperature. High magnetoresistance at 5T of 42% appears at 227K for La0.7Sr0.3MnO3 thin film.

  20. Effects of swift heavy ion irradiation on La0.5Pr0.2Sr0.3MnO3 epitaxial thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Markna, J.H.; Parmar, R.N.; Rana, D.S.; Ravi Kumar; Misra, P.; Kukreja, L.M.; Kuberkar, D.G.; Malik, S.K.

    2007-01-01

    We report the observation of room temperature insulator to metal transition and magnetoresistance characteristics of Swift Heavy Ions (SHIs) irradiated La 0.5 Pr 0.2 Sr 0.3 MnO 3 (LPSMO) epitaxial thin films grown on single crystal (1 0 0) SrTiO 3 substrates using Pulsed Laser Deposition. The epitaxial nature and crystallanity of the films was confirmed from the structural and magnetoresistance characteristics. Irradiation with the 200 MeV Ag 15+ ions at a fluence of about 5 x 10 11 ions/cm 2 showed suppression in the resistivity by ∼68% and 31% for the films with 50 nm and 100 nm thickness respectively. The possible reasons for this suppression could be either release of strain in the films in the dead layer at the interface of film-substrate or Swift Heavy Ions induced annealing which in turn affects the Mn-O-Mn bond angle thereby favoring the Zener double exchange. Field Coefficient of Resistance (FCR) values for both films, determined from R-H data and magnetoresistance data, showed a marginal enhancement after irradiation

  1. Growth and characterization of textured YBaCo{sub 2}O{sub 5+δ} thin films grown on (001)-SrTiO{sub 3} via DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Galeano, V. [Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Cerámicos y Vítreos, A.A. 568, Medellín (Colombia); Arnache, O. [Grupo de Estado Sólido, Departamento de Física, Universidad de Antioquia, A.A. 1226, Medellín (Colombia); Supelano, I.; Vargas, C.A. Parra [Universidad Pedagógica y Tecnológica de Colombia, Departamento de Física, Avenida Central del Norte 39-115, Tunja (Colombia); Morán, O., E-mail: omoranc@unal.edu.co [Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Cerámicos y Vítreos, A.A. 568, Medellín (Colombia)

    2016-06-30

    Thin films of the layered cobaltite YBaCo{sub 2}O{sub 5+δ} were successfully grown on (001)-oriented SrTiO{sub 3} single-crystal substrates by means of DC magnetron sputtering. The 112 phase of the compound was stabilized by choosing an adequate Co reactant and through careful thermal treatment of the target. The results demonstrate the strong influence of these variables on the final phase of the compound. A substrate temperature of 1053 K and an oxygen pressure of 300 Pa seemed to be appropriate growing conditions for depositing (00ℓ)-textured YBaCo{sub 2}O{sub 5+δ} thin films onto the chosen substrate. In like fashion to the polycrystalline YBaCo{sub 2}O{sub 5+δ}, the films showed a clear sequence of antiferromagnetic–ferromagnetic–paramagnetic transitions within a narrow temperature range. Well-defined hysteresis loops were observed at temperatures as high as 270 K, which supports the existence of a FM order in the films. In turn, the dependence of the resistivity on the temperature shows a semiconductor-like behavior, without any distinguishable structure, within the temperature range measured (50–350 K). The analysis of the experimental data showed that the transport mechanism in the films is well described by using the Mott variable range hopping (VRH) conduction model. - Highlights: • YBaCo{sub 2}O{sub 5+δ} thin films are grown on SrTiO{sub 3} substrates. • Strong (00ℓ) reflections are observed in the X-ray diffraction pattern. • A clear sequence of magnetic transitions is observed. • Semiconducting-like behavior is verified.

  2. Anodic galvanostatic polarization of AA2024-T3 aircraft alloy in conventional mineral acids

    Energy Technology Data Exchange (ETDEWEB)

    Kozhukharov, S., E-mail: stephko1980@abv.bg [Department of Chemical Sciences, University of Chemical Technology and Metallurgy, 8 “Kliment Okhridski” Blvd, 1756, Sofia (Bulgaria); Girginov, Ch. [Department of Chemical Sciences, University of Chemical Technology and Metallurgy, 8 “Kliment Okhridski” Blvd, 1756, Sofia (Bulgaria); Avramova, I. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Science, 11 “Georgi Bonchev” Str., 1113, Sofia (Bulgaria); Machkova, M. [Department of Chemical Sciences, University of Chemical Technology and Metallurgy, 8 “Kliment Okhridski” Blvd, 1756, Sofia (Bulgaria)

    2016-09-01

    The present study is devoted to the determination of the impact of the anodization of AA2024-T3 alloys in HCl, HNO{sub 3}, H{sub 2}SO{sub 4} or H{sub 3}PO{sub 4} on the samples’ surface morphology and properties. Subsequent systematic assessments were performed by Scanning Electron Microscopy (SEM), Energy Dispersion X-Ray Spectroscopy (EDX) and X-ray Photoelectron Spectroscopy (XPS). These observations were combined with Linear Voltammetry (LVA) and Electrochemical Impedance Spectroscopy (EIS) after 48 and 168 h of exposure to a 3.5% NaCl model corrosive medium. The main result is, that completely different effects were observed in accordance to the acid used. It was established that the monoprotonic acids have a deep destructive effect due to dissolution of the alloy components, whereas the polyprotonic ones possess either indistinguishable influence, or surface film formation. - Highlights: • AA2024 was polarized anodically in 15%{sub wt} acid solutions at 15 mA cm{sup −2} for 2 h. • Four mineral acids were selected for investigation: HCl, HNO{sub 3}, H{sub 2}SO{sub 4} and H{sub 3}PO{sub 4}. • SEM, EDX and XPS were applied for morphological description. • Electrochemical characterizations were performed by EIS and linear voltammetry. • The acid used predetermines completely different interaction with the AA2024 alloy.

  3. The effects of thermal annealing on the structure and the electrical transport properties of ultrathin gadolinia-doped ceria films grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Pryds, Nini

    2011-01-01

    show high density within the thickness probed in the X-ray reflectivity experiments. Thermally activated grain growth, density decrease, and film surface roughening, which may result in the formation of incoherent CGO10 islands by dewetting below a critical film thickness, are observed upon heat...... templates for the moderate temperature growth of thick solid electrolyte films with improved oxygen transport properties....

  4. Film

    OpenAIRE

    Jones, Sarah

    2002-01-01

    This book looks at the movie industry and at the labour intensive but fascinating process of making a feature film. It examines each stage in the production of a film, from initial idea through to the final cut and screening, and highlights the main activities that take place along the way. The book not only looks at the work of prominent people in the film world, such as directors and actors, but also describes the equally important but less high profile contributions of the gaffer, best boy...

  5. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    International Nuclear Information System (INIS)

    Grabowski, Jan

    2010-01-01

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-β2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In 2/3 Ga 1/3 As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating α2/α2-m configuration. In contrast to the previous surface reconstructions, where structural strain is

  6. On the evolution of InAs thin films grown by molecular beam epitaxy on the GaAs(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Grabowski, Jan

    2010-12-14

    Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of devices, in particular for the optical data transmission in the long-wavelength range, essential in modern communication, are based on InAs/GaAs quantum dot (QD) structures. Though the properties of the InAs/GaAs QDs have been extensively studied, only little is known about the formation and structure of the wetting layer (WL) yet. In the present work, the pathway of the InAs WL evolution is studied in detail. For this purpose, InAs thin films in the range of one monolayer (ML) are deposited on the GaAs(001) surface by molecular beam epitaxy (MBE) and studied by reflection high energy electron diffraction (RHEED) and in particular by scanning tunneling microscopy (STM). The InAs thin films are grown in both typical growth regimes, on the GaAs-c(4 x 4) and the GaAs-{beta}2(2 x 4) reconstructed surface, in a variety of thicknesses starting from submonolayers with 0.09 ML of InAs up to 1.65 ML of InAs exceeding the critical thickness for QD growth. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. In the STM images, the signatures of these In agglomerations appear with a clear bright contrast. A structural model for the initial formation of these signatures is presented, and its electronic and strain related properties are discussed. At an InAs coverage of about 0.67ML the initial surface transforms into a (4 x 3) reconstructed In{sub 2/3}Ga{sub 1/3}As ML and the detailed structure and strain properties of this surface are unraveled. On top of the InGaAs ML further deposited InAs forms a second layer, characterized by a typical zig-zag alignment of (2 x 4) reconstructed unit cells, with an alternating {alpha}2/{alpha}2-m configuration. In contrast to the previous surface reconstructions, where

  7. Growth of LiMn{sub 2}O{sub 4} thin films by pulsed-laser deposition and their electrochemical properties in lithium microbatteries

    Energy Technology Data Exchange (ETDEWEB)

    Julien, C. [Univ. Pierre et Marie Curie, Paris (France). LMDH; Haro-Poniatowski, E. [Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, Mexico (Mexico); Camacho-Lopez, M.A. [LMDH, UMR 7603, Universite Pierre et Marie Curie, 4 place Jussieu, 75252, Paris (France); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico (Mexico); Jimenez-Jarquin, J. [Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, Mexico (Mexico)

    2000-03-01

    Films of LiMn{sub 2}O{sub 4} were grown by pulsed-laser deposition (PLD) onto silicon wafers using sintered targets which consisted in the mixture of LiMn{sub 2}O{sub 4} and Li{sub 2}O powders. The film formation has been studied as a function of the preparation conditions, i.e. composition of the target, substrate temperature, and oxygen partial pressure in the deposition chamber. Composition, morphology and structural properties of PLD films have been investigated using Rutherford backscattering spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering spectroscopy. The films deposited from target LiMn{sub 2}O{sub 4}+15% Li{sub 2}O have an excellent crystallinity when deposited onto silicon substrate maintained at 300 C in an oxygen partial pressure of 100 mTorr. It is found that such a film crystallizes in the spinel structure (Fd3m symmetry) as evidenced by X-ray diffraction. Well-textured polycrystalline films exhibit crystallite size of 300 nm. Pulsed-laser deposited LiMn{sub 2}O{sub 4} thin films obtained with a polycrystalline morphology were successfully used as cathode materials in lithium microbatteries. The Li//LiMn{sub 2}O{sub 4} thin film cells have been tested by cyclic voltammetry and galvanostatic charge-discharge techniques in the potential range 3.0-4.2 V. Specific capacity as high as 120 mC/cm{sup 2} {mu}m was measured on polycrystalline films. The chemical diffusion coefficients for the Li{sub x}Mn{sub 2}O{sub 4} thin films appear to be in the range of 10{sup -11}-10{sup -12} cm{sup 2}/s. Electrochemical measurements show a good cycleability of PLD films when cells are charged-discharged at current densities of 5-25 {mu}A/cm{sup 2}. (orig.)

  8. Film

    OpenAIRE

    Bould, M.

    2014-01-01

    A critical overview of critical-theoretical understandings of sf film, especially those promulgated by critics devoted to sf as a prose fiction form. It also considers adaptation, spectacle and special effects.

  9. Growth behavior of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films on graphene substrate grown by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang Wan [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of); Kim, Gun Hwan; Kang, Min A.; An, Ki-Seok; Lee, Young Kuk [Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Kang, Seong Gu [School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Kim, Hyungjun [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

    2017-03-15

    A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was carried out. Obvious microstructural discrepancy in both the as-deposited Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films was observed when grown on graphene or SiO{sub 2}/Si substrate. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} thin films deposited on the graphene substrate were observed to be grown epitaxially along c-axis and show very smooth surface compared to that on SiO{sub 2}/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Thermoluminescent Properties of Cerium-Doped Lu2SO5 and Y2SiO5 Single Crystalline Films Scintillators Grown from PbO-B2O3 and Bi2O3 Fluxes

    Directory of Open Access Journals (Sweden)

    Anna Kilian

    2018-03-01

    Full Text Available In this work we show the influence of material preparation technology on the thermoluminescent properties of single crystalline films (SCFs of Ce3+-doped Lu2SiO5 (LSO and Y2SiO5 (YSO orthosilicates. LSO:Ce and YSO:Ce SCFs were grown by the liquid phase epitaxy method from two different melt-solutions based on PbO-B2O3 and Bi2O3 fluxes. Absorption, cathodoluminescence, and thermoluminescent properties of LSO:Ce and YSO:Ce SCFs grown from the two previously mentioned types of fluxes were compared, and results of spectrally resolved thermoluminescence measurements and thermoluminescent glow curves of SCFs recorded in different spectral ranges were presented. We have found that the observed differences in thermoluminescent properties of the SCFs under study can be caused by the domination of Ce4+ and Pb2+ emission centers in LSO:Ce and YSO:Ce SCFs grown using PbO-B2O3 flux, and Ce3+ and Bi3+ emission centers in the SCFs grown from Bi2O3 flux.

  11. Properties of YBCO films grown by the sputtering method in low gas pressure; Tei gas sputtering ho ni yori keiseishita YBCO maku no tokusei

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, T.; Kimura, H.; Suzuki, T. [Fuji Electric Corporate Research and Development, Ltd., Kanagawa (Japan)

    1996-06-10

    Formation of YBa2Cu3O2 (YBCO) films by low gas pressure sputtering and their characteristics are outlined. The film formation process proceeded at the substrate temperature of 650{degree}C, using a Y-Ba-Cu-O sintered body as the target, the (110) plane of MgO or SrTiO3 as the substrate, and Ar+50%O2 as the sputtering gas. When the substrate is positioned in the flight path of negative ions of oxygen, ions strike the film, causing re-sputtering and damage on crystals. When the substrate is positioned so that the distance between the target and substrate is approximately equal to the mean free path, crystals are damaged less, and an excellently oriented film is formed, the rate of growth being several times faster than that in the high gas pressure sputtering process. It has been found that film formation in pure Ar under the same low pressure (0.5Pa) also results in the formation of a YBCO structure, which means that oxygen required for film formation is supplied from the target. The relationship between film resistivity and temperature, or the dependence of film resistivity upon temperature, suggests that the film grows into an orthorhombic system. This is because the oxygen emitted by the target under low gas pressure is in the activated state when it lands on the film. 8 refs., 5 figs.

  12. Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.

    Science.gov (United States)

    Jung, Hyun-June; Yoon, Soon-Gil; Hong, Soon-Ku; Lee, Jeong-Yong

    2012-07-03

    Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al(2) O(3) and HfO(2) layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  14. Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

    International Nuclear Information System (INIS)

    Wu, Bin; Zhang, Yuantao; Shi, Zhifeng; Li, Xiang; Cui, Xijun; Zhuang, Shiwei; Zhang, Baolin; Du, Guotong

    2014-01-01

    Epitaxial ZnO structures with inherent two layers of nanorods layer on film layer were fabricated on c-Al 2 O 3 by metal-organic chemical vapor deposition (MOCVD) and studied by photoluminescence. Specially, photoluminescence spectra for the film layer were obtained by rendering the excitation from the substrate side. Different defect levels configurations between nanorods and film were revealed. Zinc vacancies tend to form in top nanorods layer, whereas abundant zinc–oxygen divacancies accumulate in bottom film layer. An acceptor state with activation energy of ∼200 meV is exclusive to the film layer. The stacking fault related acceptor and Al introduced donor are present in both layers. Besides, two other defect related donors contained in the nanorods layer perhaps also exist within the film layer. - Highlights: • Inherent double layer ZnO of nanorods on film layer were studied by PL. • V Zn tend to form in the nanorods layer, and V ZnO accumulate in the film layer. • An acceptor with activation energy of ∼200 meV is exclusive to the film layer. • Pure NBE emission without DLE in RT PL spectrum does not mean good crystallinity

  15. Effect of thickness on the structural and optical properties of CuO thin films grown by successive ionic layer adsorption and reaction

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus, E-mail: yakaltun@erzincan.edu.tr

    2015-11-02

    CuO thin films were synthesised on glass substrates at room temperature using successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on characteristic parameters such as the structural, morphological and optical properties of the films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all of the films exhibited polycrystalline structure with monoclinic phases and covered the glass substrates well. The crystalline and morphology of the films improved with increasing film thickness. The optical band gap decreased from 2.03 to 1.79 eV depending on the film thickness. The refractive index (n), electron effective mass (m{sub e}{sup ⁎}/m{sub o}) and static and frequency dielectric constants (ε{sub o}, ε{sub ∞}) were determined using the energy band gap values. - Highlights: • CuO thin films were deposited using SILAR method. • The electron effective mass, refractive index, dielectric constant values were calculated. • Characterisation of the films has been performed using XRD, SEM, Raman and optical measurements. • The d values of the planes of with thickness show no variation.

  16. Accurate determination of optical bandgap and lattice parameters of Zn{sub 1-x}Mg{sub x}O epitaxial films (0{<=}x{<=}0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Laumer, Bernhard [Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany); I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany); Schuster, Fabian; Stutzmann, Martin [Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany); Bergmaier, Andreas; Dollinger, Guenther [Universitaet der Bundeswehr Muenchen, Fakultaet fuer Luft- und Raumfahrttechnik, Werner-Heisenberg-Weg 39, 85577 Neubiberg (Germany); Eickhoff, Martin [I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)

    2013-06-21

    Zn{sub 1-x}Mg{sub x}O epitaxial films with Mg concentrations 0{<=}x{<=}0.3 were grown by plasma-assisted molecular beam epitaxy on a-plane sapphire substrates. Precise determination of the Mg concentration x was performed by elastic recoil detection analysis. The bandgap energy was extracted from absorption measurements with high accuracy taking electron-hole interaction and exciton-phonon complexes into account. From these results a linear relationship between bandgap energy and Mg concentration is established for x{<=}0.3. Due to alloy disorder, the increase of the photoluminescence emission energy with Mg concentration is less pronounced. An analysis of the lattice parameters reveals that the epitaxial films grow biaxially strained on a-plane sapphire.

  17. KTa{sub 0.65}Nb{sub 0.35}O{sub 3} thin films epitaxially grown by pulsed laser deposition on metallic and oxide epitaxial electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Bouyasfi, A.; Mouttalie, M. [Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1/UEB, Campus de Beaulieu, 263 avenue du general Leclerc CS 74205, 35042 Rennes Cedex (France); Laboratoire de Compatibilite Electromagnetique, Maintenance Industrielle et Nanostructures (LCEMINAS), Faculte des Sciences et Techniques, Route d' Imouzzer B.P. 2202 Fes 30000 (Morocco); Demange, V. [Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1/UEB, Campus de Beaulieu, 263 avenue du general Leclerc CS 74205, 35042 Rennes Cedex (France); Gautier, B.; Grandfond, A. [Institut des Nanotechnologies de Lyon/INSA, 7 Avenue Capelle, 69621 Villeurbanne Cedex (France); Deputier, S.; Ollivier, S. [Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1/UEB, Campus de Beaulieu, 263 avenue du general Leclerc CS 74205, 35042 Rennes Cedex (France); Hamedi, L' H. [Laboratoire de Compatibilite Electromagnetique, Maintenance Industrielle et Nanostructures (LCEMINAS), Faculte des Sciences et Techniques, Route d' Imouzzer B.P. 2202 Fes 30000 (Morocco); Guilloux-Viry, M., E-mail: maryline.guilloux-viry@univ-rennes1.fr [Sciences Chimiques de Rennes, UMR 6226 CNRS/Universite de Rennes 1/UEB, Campus de Beaulieu, 263 avenue du general Leclerc CS 74205, 35042 Rennes Cedex (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Ferroelectric KTa{sub 0.65}Nb{sub 0.35}O{sub 3} thin films grown by pulsed laser deposition. Black-Right-Pointing-Pointer KTa{sub 0.65}Nb{sub 0.35}O{sub 3} epitaxially grown on Pt and LaNiO{sub 3} epitaxial electrodes. Black-Right-Pointing-Pointer Influence of oxide vs. metal electrode on ferroelectric's structural properties. Black-Right-Pointing-Pointer AFM/TUNA mode investigation of KTa{sub 0.65}Nb{sub 0.35}O{sub 3}/Pt heterostructure. Black-Right-Pointing-Pointer Asymmetry of the conduction mechanisms (positive vs. negative applied voltage). - Abstract: Ferroelectric KTa{sub 0.65}Nb{sub 0.35}O{sub 3} (KTN) thin films were grown by pulsed laser deposition on Pt and LaNiO{sub 3} epitaxial electrodes, on (1 0 0) and (1 1 0) SrTiO{sub 3} substrates. The effect of the nature of the electrode on structural and microstructural quality of KTN films was investigated. While epitaxial KTN thin films were successfully obtained on both electrodes, two orientations compete on Pt, whatever the main orientation of Pt is (1 0 0) or (1 1 0). On LaNiO{sub 3} in contrast, pure (1 0 0) and (1 1 0) oriented KTN films were achieved with a high crystalline quality illustrated by narrow {omega}-scans ({Delta}{omega} = 0.56 Degree-Sign and {Delta}{omega} = 0.80 Degree-Sign for (1 0 0) and (1 1 0) KTN, to be compared to 0.048 Degree-Sign and 0.22 Degree-Sign for (1 0 0) and (1 1 0) LaNiO{sub 3}, respectively). Electrical measurements performed in tunneling atomic force microscopy (TUNA mode) on a KTN/Pt heterostructure showed a high asymmetry of the conduction mechanisms when a positive or a negative bias is applied on the sample. In particular leakage currents appear even at very low positive applied voltage. TUNA imaging operated at a moderate negative applied voltage of -3 V shows that some areas corresponding to grain boundaries seem to be more leaky than others.

  18. Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy

    NARCIS (Netherlands)

    Boschker, Jos E.; Tisbi, E.; Placidi, E.; Momand, Jamo; Redaelli, Andrea; Kooi, Bart J.; Arciprete, Fabrizio; Calarco, Raffaella

    The realization of textured films of 2-dimensionally (2D) bonded materials on amorphous substrates is important for the integration of this material class with silicon based technology. Here, we demonstrate the successful growth by molecular beam epitaxy of textured Sb2Te3 films and GeTe/Sb2Te3

  19. Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub delta/ thin films grown by a simple spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, A.; Koren, G.; Giess, E.A.; Moore, N.R.; O' Sullivan, E.J.M.; Cooper, E.I.

    1988-01-11

    The preparation of high T/sub c/ superconducting thin films of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub delta/ on (100) single crystals of MgO, ZrO/sub 2/ with 9% Y/sub 2/O/sub 3/ (yttria stabilized zirconia, or YSZ), and SrTiO/sub 3/ using a simple spray deposition technique is described. Typical film growth procedure involves (a) the spraying of a stoichiometric solution of the nitrate precursors on the heated substrate (180 /sup 0/C), (b) prebaking in air of the sprayed film (20 min at 500 /sup 0/C), and (c) oven annealing of the film under flowing O/sub 2/ (900--950 /sup 0/C followed by slow cooling to 200 /sup 0/C in about 3 h). X-ray diffraction analysis of the films after each of the growing steps mentioned above shows primarily the presence of crystalline phases of the nitrates, the oxides, and the orthorhombic superconducting phase, respectively. Resistivity versus temperature measurements show that the onset and completion of the superconductive transition occur at 92 and 87 K, respectively, in films on YSZ substrate; at 95 and 80 K, respectively, in films on SrTiO/sub 3/ substrate; and at 82 and 77 K, respectively, in films on MgO substrate.

  20. Enhanced electrical properties of AZO thin films grown on different substrates by using a facing-target sputtering system with hetero targets

    Science.gov (United States)

    Lee, ChangHyun; Bae, Kang; Jin, IkHyeon; Kim, HwaMin; Sohn, SunYoung

    2015-09-01

    Al-doped ZnO (AZO) films were deposited on glass, polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) at room temperature by using conventional rf-magneton sputtering (CMS) and a facing-target sputtering (FTS) with hetero targets of Al2O3 and ZnO. Their structural, surface morphology, electrical and optical properties were characterized by using X-ray diffractometry (XRD), atomic force microscopy (AFM), Hall-effect measurement and ultravioletvisible spectrophotometry, respectively. The films exhibit highly c-axis preferred orientation and a closely packed nanocrystalline. Structure the FTS-films deposited on plastic substrate are found to receive much less stress due to bombardment of high-energy particles compress to the CMS-films deposited on plastic substrates, during the sputtering process, which can enhance the electrical properties and crystalline quality of the FTS-films compared with those of the CMS-films. The resistivities of the FTS-films are 6.50 × 10-4 Ω·cm on glass, 7.0 × 10-4 Ω·cm on PEN and 7.4 × 10-4 Ω·cm on PET while the values for the CMS-films are 7.6 × 10-4 Ω·cm on glass, 1.20 × 10-3 Ω·cm on PEN and 1.58 × 10-3 Ω·cm on PET.

  1. Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

    Science.gov (United States)

    Chen, Li; Chen, Xinliang; Zhou, Zhongxin; Guo, Sheng; Zhao, Ying; Zhang, Xiaodan

    2018-03-01

    Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 °C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10‑3 Ω·cm and high optical transmittance deposited at 150 °C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707) and the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900).

  2. Pure and Nb2O5-doped TiO2 amorphous thin films grown by dc magnetron sputtering at room temperature: Surface and photo-induced hydrophilic conversion studies

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Tudose, I.V.; Vernardou, D.; Lygeraki, M.I.; Anastasiadis, S.H.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Photo-induced hydrophilicity of titanium dioxide makes this material one of the most suitable for various coating applications in antifogging mirrors and self-cleaning glasses. The field of functional titanium dioxide coatings is expanding rapidly not only in applications for glass but also in applications for polymer, metal and ceramic materials. The high hydrophilic surface of TiO 2 is interesting for understanding also the basic photon-related surface science of titanium dioxide. In doing so, it is inevitably necessary to understand the relationship between the photoreaction and the surface properties. In this work, photo-induced hydrophilic conversion was evaluated on amorphous pure and niobium oxide-doped titanium dioxide thin films on Corning 1737F glass grown by dc magnetron sputtering technique at room temperature. This study is focused on the influence of the Ar:O ratio during sputtering plasma deposition on thin film surface morphology and subsequent photo-induced hydrophilic conversion results. Structural characterization carried out by X-ray diffraction and atomic force microscopy (AFM) has shown that our films are amorphous and extremely smooth with a surface roughness bellow 1 nm. Contact angle measurements were performed on as-deposited and during/after 10 min UV exposure. We present evidence that the photo-induced hydrophilic conversion of film surface is directly correlated with surface morphology and can be controlled by growth conditions

  3. Large modification in insulator-metal transition of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001) by high energy ion irradiation in biased reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Azhan, Nurul Hanis; Okimura, Kunio, E-mail: okifn@keyaki.cc.u-tokai.ac.jp [Graduate School of Science and Technology, Tokai University, Hiratsuka 259-1292 (Japan); Ohtsubo, Yoshiyuki; Kimura, Shin-ichi [Graduate School of Frontier Biosciences, Osaka University, Suita 565-0871 (Japan); Zaghrioui, Mustapha; Sakai, Joe [GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours (France)

    2016-02-07

    High energy ion irradiation in biased reactive sputtering enabled significant modification of insulator-metal transition (IMT) properties of VO{sub 2} films grown on Al{sub 2}O{sub 3} (001). Even at a high biasing voltage with mean ion energy of around 325 eV induced by the rf substrate biasing power of 40 W, VO{sub 2} film revealed low IMT temperature (T{sub IMT}) at 309 K (36 °C) together with nearly two orders magnitude of resistance change. Raman measurements from −193 °C evidenced that the monoclinic VO{sub 2} lattice begins to transform to rutile-tetragonal lattice near room temperature. Raman spectra showed the in-plane compressive stress in biased VO{sub 2} films, which results in shortening of V–V distance along a-axis of monoclinic structure, a{sub M}-axis (c{sub R}-axis) and thus lowering the T{sub IMT}. In respect to that matter, significant effects in shortening the in-plane axis were observed through transmission electron microscopy observations. V2p{sub 3/2} spectra from XPS measurements suggested that high energy ion irradiation also induced oxygen vacancies and resulted for an early transition onset and rather broader transition properties. Earlier band gap closing against the temperature in VO{sub 2} film with higher biasing power was also probed by ultraviolet photoelectron spectroscopy. Present results with significant modification of IMT behavior of films deposited at high-energy ion irradiation with T{sub IMT} near the room temperature could be a newly and effective approach to both exploring mechanisms of IMT and further applications of this material, due to the fixed deposition conditions and rather thicker VO{sub 2} films.

  4. Synthesis and magnetotransport studies of CrO2 films grown on TiO2 nanotube arrays by chemical vapor deposition

    Science.gov (United States)

    Wang, Xiaoling; Zhang, Caiping; Wang, Lu; Lin, Tao; Wen, Gehui

    2018-04-01

    The CrO2 films have been prepared on the TiO2 nanotube array template via atmospheric pressure chemical vapor deposition method. And the growth procedure was studied. In the beginning of the deposition process, the CrO2 grows on the cross section of the TiO2 nanotubes wall, forms a nanonet-like layer. And the grain size of CrO2 is very small. With the increase of the deposition time, the grain size of CrO2 also increases, and the nanonet-like layer changes into porous film. With the further increase of the deposition time, all the nanotubes are covered by CrO2 grains and the surface structure becomes polycrystalline film. The average grain size on the surface of the CrO2 films deposited for 1 h, 2 h and 5 h is about 190 nm, 300 nm and 470 nm. The X-ray diffraction pattern reveals that the rutile CrO2 film has been synthesized on the TiO2 nanotube array template. The CrO2 films show large magnetoresistance (MR) at low temperature, which should originate from spin-dependent tunneling through grain boundaries between CrO2 grains. And the tunneling mechanism of the CrO2 films can be well described by the fluctuation-induced tunneling (FIT) model. The CrO2 film deposited for 2 h shows insulator behavior from 5 k to 300 K, but the CrO2 film deposited for 5 h shows insulator-metal transition around 140 K. The reason is briefly discussed.

  5. Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates

    Science.gov (United States)

    Srivastava, Manoj K.; Singh, Sandeep; Siwach, P. K.; Kaur, Amarjeet; Awana, V. P. S.; Maurya, K. K.; Singh, H. K.

    2013-05-01

    Highly oriented polycrystalline Sm0.55Sr0.45MnO3 thin films (thickness ˜100 nm) deposited on LaAlO3 (LAO, (001)), SrTiO3 (STO, (001)) and (La0.18Sr0.82) (Al0.59Ta0.41)O3 (LSAT, (001)) single crystal substrates by ultrasonic nebulized spray pyrolysis have been studied. The out of plane lattice parameter (OPLP) of the film on LAO is slightly larger than that of the corresponding bulk. In contrast, the OPLP of the films on STO and LSAT are slightly smaller than the corresponding bulk value. This suggests that the film on LAO is under compressive strain while LSAT and STO are under tensile strain. The films on LAO and LSAT show simultaneous paramagnetic-ferromagnetic (PM-FM) and insulator-metal transition (IMT) temperature at TC/TIM ˜ 165 K and 130 K, respectively. The PM-FM and IM transition occur at TC ˜ 120 K and TIM ˜ 105 K, respectively in the film on STO substrate. At T CO) clusters. All the films show colossal magnetoresistance but its temperature and magnetic field dependence are drastically different. The films on LAO and STO show peak CMR around TC/TIM, while the film on LSAT shows MR > 99 % over a very wide temperature range of ˜40 K centred on TC/TIM. In the lower temperature region the magnetic field dependent isothermal resistivity also shows signature of metamagnetic transitions. The observed results have been explained in terms of the variation of the relative fractions of the coexisting FM and AFM-CO phases as a function of the substrate induced strain and oxygen vacancy induced quenched disorder.

  6. Texture development, microstructure and phase transformation characteristics of sputtered Ni-Ti Shape Memory Alloy films grown on TiN<111>

    Energy Technology Data Exchange (ETDEWEB)

    Martins, R.M.S., E-mail: rmsm@fct.unl.p [Unidade de Fisica e Aceleradores, Instituto Tecnologico e Nuclear, EN10, 2696-953 Sacavem (Portugal); Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Centro de Fisica Nuclear da Universidade de Lisboa (CFNUL), Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); Schell, N. [GKSS Research Center Geesthacht, Max-Planck-Str. 1, 21502 Geesthacht (Germany); Reuther, H. [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Pereira, L.; Mahesh, K.K.; Silva, R.J.C.; Fernandes, F.M. Braz [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal)

    2010-10-29

    Near equiatomic Ni-Ti films have been deposited by magnetron co-sputtering on TiN films with a topmost layer formed by < 111> oriented grains (TiN/SiO{sub 2}/Si(100) substrate) in a chamber installed at a synchrotron radiation beamline. In-situ X-ray diffraction during Ni-Ti film growth and their complementary ex-situ characterization by Auger electron spectroscopy, scanning electron microscopy and electrical resistivity measurements during temperature cycling have allowed us to establish a relationship between the structure and processing parameters. A preferential development of < 110> oriented grains of the B2 phase since the beginning of the deposition has been observed (without and with the application of a substrate bias voltage of -45 and -90 V). The biaxial stress state is considerably influenced by the energy of the bombarding ions, which is dependent on the substrate bias voltage value applied during the growth of the Ni-Ti film. Furthermore, the present work reveals that the control of the energy of the bombarding ions is a promising tool to vary the transformation characteristics of Ni-Ti films, as shown by electrical resistivity measurements during temperature cycling. The in-situ study of the structural evolution of the growing Ni-Ti film as a consequence of changing the Ti:Ni ratio during deposition (on a TiN<111> layer) has also been performed. The preferential growth of < 110> oriented grains of the Ni-Ti B2 phase has been as well observed despite the precipitation of Ti{sub 2}Ni during the deposition of a Ti-rich Ni-Ti film fraction. Functionally graded Ni-Ti films should lead to an intrinsic 'two-way' shape memory effect which is a plus for the miniaturization of Ni-Ti films based devices in the field of micro-electro-mechanical systems.

  7. Epitaxial Ba2IrO4 thin-films grown on SrTiO3 substrates by pulsed laser deposition

    OpenAIRE

    Nichols, J.; Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A.

    2014-01-01

    We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metalinsulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlatio...

  8. Enhanced photoelectrochemical activity of electro-synthesized CdS-Bi{sub 2}S{sub 3} composite films grown with self-designed cross-linked structure

    Energy Technology Data Exchange (ETDEWEB)

    Jana, A.; Bhattacharya, C. [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India); Datta, J., E-mail: jayati_datta@rediffmail.co [Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah 711 103, West Bengal (India)

    2010-09-01

    In the present investigation thin semiconductor films of CdS, Bi{sub 2}S{sub 3} and their intermixed composite films have been electro-synthesized onto conducting glass substrate from nonaqueous bath containing various levels of the precursor salts of Cd{sup 2+} and Bi{sup 3+}. Spectrophotometric measurements determine the band gap energies of the composite films at {approx}2.53 eV and {approx}1.37 eV corresponding to the binary systems CdS and Bi{sub 2}S{sub 3}, respectively. The film matrices exhibit a unique structure of cross-linked nanoporous Bi{sub 2}S{sub 3} mesh containing spherical shaped CdS crystals distributed uniformly on the top of the surface as detected from the morphological studies through scanning electron microscopy and transmission electron microscopy. X-ray diffraction studies show crystalline structure of the films of which the chemical compositions were determined through energy dispersive analysis of X-ray. The film matrices enriched with Cd exhibit high dielectric property as obtained from the capacitance measurement and substantial thermal stability derived from thermogravimetry and differential thermal analysis. These films are found to be highly fluorescent in nature when subjected to spectrofluorimetric analysis. The Raman spectral data exhibit characteristic peaks that are associated with Cd-S and Bi-S bonds as well as the defects created by metal oxides. The spectrum also demonstrates that the changes in the relative position of the overtone bands are associated with compositional variation of the film surface. The study of electrochemical polarization of different films, derives the inherent stability of the matrices towards dissolution. This was followed by anodic stripping voltammetry to estimate the dissolved cations during polarization. Photoelectrochemical measurements demonstrate n-type semiconductivity of the films with high order of donor density and reasonable photoactivity under illuminated condition. It may be summarized

  9. Large-area atomic layer deposition and characterization of Al sub 2 O sub 3 film grown using AlCl sub 3 and H sub 2 O

    CERN Document Server

    Yun, S J; Paek, M C; Nam, K S

    1998-01-01

    The atomic layer deposition (ALD) process of Al sub 2 O sub 3 films in a large area traveling wave reactor was studied as well as the materials and electrical characteristics of the films. The precursors used in the deposition of Al sub 2 O sub 3 were AlCl sub 3 and H sub 2 O. The dependence of growth rate and Cl content of Al sub 2 O sub 3 films on the growth temperature was investigated at the reactor temperature ranging from 300 .deg. C to 500 .deg. C. The growth rate decreased from 0.66 to 0.45 A/cycle as the reactor temperature increased from 330 .deg. C to 500 .deg. C. The etch rate of the films and the annealing effect on the crystallinity of Al sub 2 O sub 3 films were also studied. The dependence of characteristics of Al sub 2 O sub 3 on the growth conditions was discussed according to the growth mechanism. The electrical characteristics including breakdown electric field and leakage current of the Al sub 2 O sub 3 films were measured to determine the effect of growth temperature on electrical proper...

  10. Influence of deposition parameters and annealing on Cu{sub 2}ZnSnS{sub 4} thin films grown by SILAR

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Kinjal; Shah, Dimple V. [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Kheraj, Vipul, E-mail: vipulkheraj@gmail.com [Department of Applied Physics, S.V. National Institute of Technology, Surat 395007 (India); Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112 (United States)

    2015-02-15

    Highlights: • Optimisation of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film deposition using SILAR method. • Study on effects of annealing at different temperature under two different ambients, viz. sulphur and tin sulphide. • Formation of CZTS thin films with good crystalline quality confirmed by XRD and Raman spectra. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at the room-temperature. The deposition parameters such as concentration of precursors and number of cycles were optimised for the deposition of uniform CZTS thin films. Effects of annealing at different temperature under two different ambient, viz. sulphur and tin sulphide have also been investigated. The structural and optical properties of the films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and UV-visible spectra in light with the deposition parameters and annealing conditions. It is observed that a good quality CZTS film can be obtained by SILAR at room temperature followed by annealing at 500 °C in presence of sulphur.

  11. Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

    Directory of Open Access Journals (Sweden)

    Wei-Chun Chen

    2012-01-01

    Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

  12. A study on the structural and mechanical properties of nanocrystalline CuS thin films grown by chemical bath deposition technique

    International Nuclear Information System (INIS)

    Mukherjee, Nillohit; Sinha, Arijit; Khan, Gobinda Gopal; Chandra, Debraj; Bhaumik, Asim; Mondal, Anup

    2011-01-01

    We report a chemical route for the deposition of nanocrystalline thin films of CuS, using aqueous solutions of Cu(CH 3 COO) 2 , SC(NH 2 ) 2 and N(CH 2 CH 2 OH) 3 [triethanolamine, i.e. TEA] in proper concentrations and ratios. The films were structurally characterized using X-ray diffraction technique (XRD), field emission scanning electron microscopy (FESEM) and optical analysis [both photo luminescence (PL) and ultraviolet-visible (UV-vis)]. Optical studies showed a large blue shift in the band gap energy of the films due to quantum confinement effect exerted by the nanocrystals. From both XRD and FESEM analyses, formation of CuS nanocrystals with sizes within 10-15 nm was evident. A study on the mechanical properties was carried out using nanoindentation and nanoscratch techniques, which showed good mechanical stability and high adherence of the films with the bottom substrate. Such study on the mechanical properties of the CuS thin films is being reported here for the first time. Current-voltage (I-V) measurements were also carried out for the films, which showed p-type conductivity.

  13. Growth Condition of CeO{sub 2} Thin Films Grown on Glass Substrate from Aqueous Solution and Their Optical Property

    Energy Technology Data Exchange (ETDEWEB)

    Saiki, A; Hashizume, T; Terayama, K [Field of Nano and Functional Material Science, Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama-shi, Toyama 930-8555 Japan (Japan); Kawai, C, E-mail: saiki@eng.u-toyama.ac.jp [Department of Material Systems Engineering and Life Science, Graduate School of Science and Engineering for Education, University of Toyama, 3190 Gofuku, Toyama-shi, Toyama 930-8555 Japan (Japan)

    2011-10-29

    Cerium dioxide (CeO{sub 2}) thin film is an attractive material with multiple applications. In this study CeO{sub 2} precursor thin films were deposited onto glass substrates at a room temperature from an aqueous solution by applying constant electrical field and their optical properties were investigated. The precursor was an aqueous solution of Ce(NO{sub 3}){sub 3}-6H{sub 2}O, Y(NO{sub 3}){sub 3}-6H{sub 2}O, and NH{sub 3}(aq). The thin film was deposited on the glass substrate of the minus electrode side. By applying the electrical field of 2.6-3.6 V, the Y-Ce(OH){sub 3} thin film was effectively deposited on glass substrates for 20-60 min at room temperature. The as-deposited film was amorphous, and a crystalline phase of Y-CeO{sub 2} with a transparent and smooth surface can be obtained after annealing at 823 K for 5 h in air. Spectral transmission curves of visible to ultraviolet light region through Y-CeO{sub 2} films were measured and about 10 to 30 % absorption peaks were observed around 310 to 330 nm.

  14. Photoluminescence and ferroelectric properties of sol-gel-grown Eu-doped CaBi{sub 4}Ti{sub 4}O{sub 15} : Nd films

    Energy Technology Data Exchange (ETDEWEB)

    Wang Weichao; Zheng Haiwu; Liu Yuefeng; Li Zonghui; Zhang Ting; Zhang Weifeng [Key Laboratory of Photovoltaic Materials of Henan Province, Department of Physics, Institute of Physics for Microsystem, Henan University, Kaifeng 475004 (China)], E-mail: zhenghaiwu76@yahoo.com.cn, E-mail: wfzhang@henu.edu.cn

    2009-05-21

    Eu-doped CaBi{sub 4}Ti{sub 4}O{sub 15} : Nd (CBENT) ferroelectric thin films were prepared on Pt/Ti/SiO{sub 2}/Si substrates by a sol-gel method. The photoluminescence (PL) and ferroelectric properties of the films were investigated by using different annealing temperatures and concentrations of europium ions. All the CaBi{sub 3.75-x}Eu{sub x}Nd{sub 0.25}Ti{sub 4}O{sub 15} films have a polycrystalline bismuth-layered perovskite structure, and a morphotropic phase boundary (MPB) between orthorhombic and tetragonal phases was shown to exist. The PL intensity of the CBENT films is significantly dependent on annealing temperature and Eu concentration. The remanent polarization 2Pr values of the Eu-doped CaBi{sub 4}Ti{sub 4}O{sub 15} : Nd thin films reaches a maximum value of 30.7 {mu}C cm{sup -2} when x is 0.2. The PL and ferroelectric properties suggest that CBENT films can be considered as promising multifunctional materials.

  15. Photoluminescence and ferroelectric properties of sol-gel-grown Eu-doped CaBi4Ti4O15 : Nd films

    Science.gov (United States)

    Wang, Weichao; Zheng, Haiwu; Liu, Yuefeng; Li, Zonghui; Zhang, Ting; Zhang, Weifeng

    2009-05-01

    Eu-doped CaBi4Ti4O15 : Nd (CBENT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The photoluminescence (PL) and ferroelectric properties of the films were investigated by using different annealing temperatures and concentrations of europium ions. All the CaBi3.75-xEuxNd0.25Ti4O15 films have a polycrystalline bismuth-layered perovskite structure, and a morphotropic phase boundary (MPB) between orthorhombic and tetragonal phases was shown to exist. The PL intensity of the CBENT films is significantly dependent on annealing temperature and Eu concentration. The remanent polarization 2Pr values of the Eu-doped CaBi4Ti4O15 : Nd thin films reaches a maximum value of 30.7 µC cm-2 when x is 0.2. The PL and ferroelectric properties suggest that CBENT films can be considered as promising multifunctional materials.

  16. Luminescence characteristics of the LPE-grown undoped and In-doped ZnO thin films and bulk single crystals

    Czech Academy of Sciences Publication Activity Database

    Pejchal, Jan; Kagamitani, Y.; Ehrentraut, D.; Sato, H.; Odaka, H.; Hatanaka, H.; Nikl, Martin; Yoshikawa, A.; Fukumura, H.; Fukuda, T.

    2007-01-01

    Roč. 4, č. 3 (2007), s. 942-945 ISSN 1862-6351 R&D Projects: GA MŠk ME 871 Grant - others:NEDO(JP) 03A26014a Institutional research plan: CEZ:AV0Z10100521 Keywords : luminescence * LPE-grown undoped * bulk single crystals Subject RIV: BM - Solid Matter Physics ; Magnetism

  17. Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

    Science.gov (United States)

    Vaghayenegar, M.; Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Smith, David J.

    2017-08-01

    This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annealed samples has been carried out using bright-field transmission electron microscopy. Triangular pits present in as-grown material are associated with a mixture of Frank partials and perfect dislocations, while pits with fish-eye shapes have perfect dislocations with 1/2[0\\bar{1}1] Burgers vector. The dislocations beneath skew pits are more complex as they have two different crystallographic directions, and are associated with a mixture of Shockley partials and perfect dislocations. Dislocation analysis of samples after thermal cycle annealing (TCA) shows that the majority of dislocations under the etch pits are short segments of perfect dislocations with 1/2[0\\bar{1}1] Burgers vector while the remainder are Shockley partials. The absence of fish-eye shape pits in TCA samples suggests that they are associated with mobile dislocations that have reacted during annealing, causing the overall etch pit density to be reduced. Very large pits with a density ˜2×103 cm-2 are observed in as-grown and TCA samples. These defects thread from within the CdTe buffer layer into the upper regions of the HgCdTe layers. Their depth in as-grown material is so large that it is not possible to locate and identify the underlying defects.

  18. High transmittance cadmium oxysulfide Cd(S,O) buffer layer grown by triton X-100 mediated chemical bath deposition for thin-film heterojunction solar cells

    Science.gov (United States)

    Ballipinar, Faruk; Rastogi, A. C.

    2017-01-01

    Polycrystalline 100-190 nm Cd(S,O) n-type semiconductor thin films of high transparency in the visible range are deposited by a surfactant Triton X-100 mediated chemical bath deposition process. The crystalline structure of the films revealed by X-ray diffraction data shows a cubic-CdO phase signified by (111) and (200) planes alongside the (002), (220), and (110) planes from hexagonal-CdS. The invariance of the 2θ position of the (002) CdS diffraction is interpreted in terms of the growth of the composite film essentially by the formation of a dilute interstitial alloy of CdO and CdS. This is confirmed by Raman spectra which, besides the CdS 1LO and 2LO modes at 300 and 600 cm-1, also show Raman lines from CdO at 1098 cm-1 and 952 cm-1 assigned as overtone of 2LO phonon modes and 556 cm-1 due to band crossing between LO and TO modes of CdO. Optical spectra of Cd(S,O) films show a median transmittance of >85% compared to ˜70% for CdS films in the 550-1000 nm wavelength range. The Cd(S,O) films show optical bandgap varying from 2.34 to 2.26 eV with increasing CdO fraction but retain high sub-bandgap transmission and sharp band edge threshold. The Cd(S,O) films thus offer an alternative to the CdS buffer layer in the heterojunction solar cells, which has major shortcoming of poor stability and high sub-bandgap absorption. The photoluminescence spectra of Cd(S,O) films show three green bands, of which one is the near band edge transition at 511.5 nm, the same as in CdS, the second band at 526.0 nm that red shifted from the CdS position is due to shallow donor-acceptor defects arising from structural change due to CdO, and the third band at 543.6 nm (2.28 eV) originates from direct band transition in CdO. The growth mechanism of Cd(S,O) films is described, which invokes that the Triton X-100 molecule modifies the microenvironment around adsorbed [Cd(NH3)4]2+ species, thereby inducing two concurrent reactions, one with SH- species that cause CdS formation and the

  19. Film

    OpenAIRE

    Balint, Ruth; Dolgopolov, Greg

    2008-01-01

    From the beginning of the twentieth century, Sydney defined cosmopolitanism and modernity in the national imagination, and central to this image was the cinema: its technology, its architecture, its stars, its marketing and the stories it circulated to its audiences about Australia and the world. Though it is difficult to define a genre of Sydney film, Sydney provided the backdrop for a host of ideas about the city, and later suburbia. Sydney came to be seen as a ‘tinsel town’ of cultural ban...

  20. Spin wave and percolation studies in epitaxial La{sub 2/3}Sr{sub 1/3}MnO{sub 3} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ettayfi, A. [LPMMAT, Faculté des Sciences Ain chock, Université Hassan II de Casablanca, B.P. 5366 Casablanca (Morocco); Moubah, R., E-mail: reda.moubah@hotmail.fr [LPMMAT, Faculté des Sciences Ain chock, Université Hassan II de Casablanca, B.P. 5366 Casablanca (Morocco); Hlil, E.K. [Institut Néel, CNRS, Université Joseph Fourier, BP 166, 38042 Grenoble Cedex 9 (France); Colis, S.; Lenertz, M.; Dinia, A. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 UDS-CNRS (UDS-ECPM), 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France); Lassri, H. [LPMMAT, Faculté des Sciences Ain chock, Université Hassan II de Casablanca, B.P. 5366 Casablanca (Morocco)

    2016-07-01

    We investigate the magnetic and transport properties of high quality La{sub 2/3}Sr{sub 1/3}MnO{sub 3} thin films grown by pulsed laser deposition. X-ray diffraction shows that the deposited films are epitaxial with the expected pseudo-cubic structure. Using the spin wave theory, the temperature dependence of magnetization was satisfactory modeled at low temperature, in which several fundamental magnetic parameters were obtained (spin wave stiffness, exchange constants, Fermi wave-vector, Mn–Mn interatomic distance). The transport properties were studied via the temperature dependence of electrical resistivity [ρ(T)], which shows a peak at Curie temperature due to metal to insulator transition. The percolation theory was used to simulate ρ(T) in both the ferromagnetic and paramagnetic phases. Reasonable agreement with the experimental data is reported. - Highlights: • The magnetic and transport properties of epitaxial La{sub 2/3}Sr{sub 1/3}MnO{sub 3} thin films are investigated. • The M(T) curve was modeled at low temperature, and several magnetic parameters were obtained using spin wave theory. • The percolation theory was used to simulate ρ(T) in both the ferromagnetic and paramagnetic phases.

  1. Effect of Zn-doping on the structural and optical properties of BaTiO3 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Fasasi, A.Y.; Maaza, M.; Rohwer, E.G.; Knoessen, D.; Theron, Ch.; Leitch, A.; Buttner, U.

    2008-01-01

    Thin films of zinc oxide doped barium titanate (BaZn x Ti 1-x O 3 ) have been prepared by pulsed laser ablation using different targets having zinc composition varying between x = 1 to 5 wt.% at a step of 1 wt.% on corning glass microscope slide and silicon substrates. X-ray diffraction analyses showed films to be of tetragonal phase with an average grain size of 20 nm and c/a ratio of 1.08 indicating lattice expansion due to ZnO incorporation. Atomic force microscopy studies of the prepared thin films indicated smooth surfaces with average roughness of 1.84 and 4.6 nm for as-deposited and sintered specimens respectively. Scanning electron microscopy showed films to be smooth and uniform. UV-Visible as well as Fourier Transform Infrared transmission measurements showed a transmission of more than 80% in the visible and 5-20% in the near infrared. The transmittance is strongly affected by annealing. There is a dependence of band gap energy on film thickness as well as on the amount of ZnO added. High ZnO dopant level led to an increase in the band gap

  2. Effect of Zn-doping on the structural and optical properties of BaTiO{sub 3} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa)], E-mail: ayfasasi@yahoo.co.uk; Maaza, M. [Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa); Rohwer, E.G. [Laser Research Institute, Department of Physics, University of Stellenbosch, Stellenbosch, Western Cape (South Africa); Knoessen, D. [Department of Physics, University of Western Cape, Private Bag X1001, Belville (South Africa); Theron, Ch. [Nano-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation, P. O. Box 722, Somerset West 7129 (South Africa); Leitch, A. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Buttner, U. [Department of Electrical Engineering, University of Stellenbosch, Stellenbosch, Western Cape (South Africa)

    2008-07-31

    Thin films of zinc oxide doped barium titanate (BaZn{sub x}Ti{sub 1-x}O{sub 3}) have been prepared by pulsed laser ablation using different targets having zinc composition varying between x = 1 to 5 wt.% at a step of 1 wt.% on corning glass microscope slide and silicon substrates. X-ray diffraction analyses showed films to be of tetragonal phase with an average grain size of 20 nm and c/a ratio of 1.08 indicating lattice expansion due to ZnO incorporation. Atomic force microscopy studies of the prepared thin films indicated smooth surfaces with average roughness of 1.84 and 4.6 nm for as-deposited and sintered specimens respectively. Scanning electron microscopy showed films to be smooth and uniform. UV-Visible as well as Fourier Transform Infrared transmission measurements showed a transmission of more than 80% in the visible and 5-20% in the near infrared. The transmittance is strongly affected by annealing. There is a dependence of band gap energy on film thickness as well as on the amount of ZnO added. High ZnO dopant level led to an increase in the band gap.

  3. Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

    International Nuclear Information System (INIS)

    Chandrasekaran, R.; Moustakas, T. D.; Ozcan, A. S.; Ludwig, K. F.; Zhou, L.; Smith, David J.

    2010-01-01

    This paper reports the growth by molecular beam epitaxy of AlN and GaN thin films on R-plane sapphire substrates. Contrary to previous findings that GaN grows with its (1120) A-plane parallel to the (1102) R-plane of sapphire, our results indicate that the crystallographic orientation of the III-nitride films is strongly dependent on the kinetic conditions of growth for the GaN or AlN buffer layers. Thus, group III-rich conditions for growth of either GaN or AlN buffers result in nitride films having (1120) planes parallel to the sapphire surface, and basal-plane stacking faults parallel to the growth direction. The growth of these buffers under N-rich conditions instead leads to nitride films with (1126) planes parallel to the sapphire surface, with inclined c-plane stacking faults that often terminate threading dislocations. Moreover, electron microscope observations indicate that slight miscut (∼0.5 deg. ) of the R-plane sapphire substrate almost completely suppresses the formation of twinning defects in the (1126) GaN films.

  4. Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

    CERN Document Server

    Park, M G; Hong, B; Kim, Y T; Yoon, D H

    2002-01-01

    In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (T sub a) and radio frequency (rf) power. The substrate temperature (T sub s) was 250 deg. C, the rf power was varied from 30 to 400 W, and the range of T sub a was from 400 to 600 deg. C. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH sub 4 +CH sub 4 gas mixture. The experimental results have shown that the optical bandgap energy (E sub g) of the a-SiC:H thin films changed little on the annealing temperature while E sub g increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.

  5. Superconducting Nd1.85Ce0.15CuO4 films grown by the pulsed electron deposition technique

    International Nuclear Information System (INIS)

    Guo, Y.F.; Chen, L.M.; Lei, M.; Guo, X.; Li, P.G.; Tang, W.H.

    2006-01-01

    Nd 1.85 Ce 0.15 CuO 4-δ superconducting thin films were prepared on (1 0 0) SrTiO 3 substrates by pulsed electron deposition technique without reducing atmosphere. Oxygen content is finely controlled by high temperature vacuum annealing, and optimal superconductivity has been obtained. The deposition conditions of the film are discussed in details. Higher deposition temperature and lower gas pressure result in the loss of copper and the appearance of the foreign phase Ce 0.5 Nd 0.5 O 1.75 . High quality Nd 1.85 Ce 0.15 CuO 4-δ epitaxial films are deposited at 840-870 deg. C in the mixed gas with a ratio of O 2 :Ar = 1:3

  6. Electrical conductivity and oxygen exchange kinetics of La2NiO4+delta thin films grown by chemical vapor deposition

    DEFF Research Database (Denmark)

    Garcia, G.; Burriel, M.; Bonanos, Nikolaos

    2008-01-01

    Epitaxial c-axis oriented La2NiO4+delta films were deposited onto SrTiO3 and NdGaO3 substrates by the pulsed injection metal organic chemical vapor deposition technique. Experimental conditions were optimized in order to accurately control the composition, thickness, and texture of the layers. X......-ray diffraction was used to confirm the high crystalline quality of the obtained material. Electrical characterizations were performed on thin (50 nm) and thick (335 nm) layers. The total specific conductivity, which is predominantly electronic, was found to be larger for the thinner films measured (50 nm......), probably due to the effect of the strain present in the layers. Those thin films (50 nm) showed values even larger than those observed for single crystals and, to our knowledge, are the largest conductivity values reported to date for the La2NiO4+delta material. The oxygen exchange kinetics was studied...

  7. Increasing the electrical anisotropy of solution-grown PbI2 thin films by addition of CdI2

    International Nuclear Information System (INIS)

    Ponpon, J.P.; Amann, M.

    2010-01-01

    In the present study up to 20% CdI 2 has been added to a lead iodide-water solution, which is used to grow PbI 2 polycrystalline thin films. As a result, a significant increase in the anisotropy of the lead iodide film's electrical properties has been observed: the resistivity in the direction parallel to the c-axis reached 10 15 Ω cm but did not change significantly in the orthogonal direction. This behavior can be explained by the modification of the transport properties related to the crystallographic structure of the films along the c-axis. As suggested by thermally stimulated current measurements, only a small number of the Cd atoms incorporated into the PbI 2 lattice could behave as dopants.

  8. Raman study of light-emitting SiN{sub x} films grown on Si by low-pressure chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Komarov, F. [A.N. Sevchenko Institute of Applied Physics Problems, Kurchatov Str. 7, 220045 Minsk (Belarus); Vlasukova, L. [Belarusian State University, Nezavisimosty Ave. 4, 220030 Minsk (Belarus); Parkhomenko, I., E-mail: irinaparkhomen@gmail.com [Belarusian State University, Nezavisimosty Ave. 4, 220030 Minsk (Belarus); Milchanin, O. [A.N. Sevchenko Institute of Applied Physics Problems, Kurchatov Str. 7, 220045 Minsk (Belarus); Mudryi, A. [Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki Str. 17, 220072 Minsk (Belarus); Togambaeva, A. [Al-Farabi Kazakh National University, Al-Farabiy Ave. 71, 050038 Almaty (Kazakhstan); Korolik, O. [Belarusian State University, Nezavisimosty Ave. 4, 220030 Minsk (Belarus)

    2015-03-31

    Si-rich silicon nitride (SRSN) films were deposited on Si wafers by low pressure chemical vapor deposition (LPCVD) technique and, subsequently, annealed at (800–1200) °C to form Si precipitates. The composition of SiN{sub x} films was measured by Rutherford backscattering spectrometry (RBS). Two sets of samples differed by the amount of excessive Si (Si{sub exc}) in silicon nitride were studied. Evolution of Si nanoclusters from amorphous to crystalline ones during high temperature treatment was examined by Raman scattering (RS) spectroscopy. The amorphous Si clusters were already revealed in as-deposited SiN{sub x} while the annealing results in their crystalliz