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Sample records for film substrates microwave

  1. Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Fujii, S., E-mail: fujii.s.ap@m.titech.ac.jp [Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo 152-8522 (Japan); Department of Information and Communication System Engineering, National Institute of Technology, Okinawa College, Nago, Okinawa 905-2192 (Japan); Kawamura, S.; Maitani, M. M.; Suzuki, E.; Wada, Y. [Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo 152-8522 (Japan); Mochizuki, D. [Interdisciplinary Cluster for Cutting Edge Research, Center for Energy and Environmental Science, Shinshu University, Ueda, Nagano 386-8567 (Japan)

    2015-12-15

    Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process.

  2. Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

    Directory of Open Access Journals (Sweden)

    S. Fujii

    2015-12-01

    Full Text Available Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process.

  3. ITO thin films prepared by a microwave heating

    International Nuclear Information System (INIS)

    Okuya, Masayuki; Ito, Nobuyuki; Shiozaki, Katsuyuki

    2007-01-01

    ITO thin films were prepared by irradiating 2.45 GHz of microwave with an output power of 700 W using a commercial kitchen microwave oven. A substrate temperature went up and down rapidly between 100 and 650 deg. C in a minute by a dielectric loss of SnO 2 layer pre-deposited on a glass substrate. We found that the electrical and optical properties of films were affected by the atmosphere in a microwave irradiation, while the sintering was completed within a few minutes. Although the electrical resistivity was not reduced below 5.0 x 10 -4 Ω.cm in this study, the results lead to the possibility of a practical rapid synthesis of ITO transparent conducting oxide films

  4. Microwave flexible transistors on cellulose nanofibrillated fiber substrates

    Science.gov (United States)

    Jung-Hun Seo; Tzu-Hsuan Chang; Jaeseong Lee; Ronald Sabo; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

    2015-01-01

    In this paper, we demonstrate microwave flexible thin-film transistors (TFTs) on biodegradable substrates towards potential green portable devices. The combination of cellulose nanofibrillated fiber (CNF) substrate, which is a biobased and biodegradable platform, with transferrable single crystalline Si nanomembrane (Si NM), enables the realization of truly...

  5. Measurements and removal of substrate effects on the microwave surface impedance of YBCO films on SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Pompeo, N [Dipartimento di Fisica ' E Amaldi' and Unita CNISM, Universita Roma Tre, Via dellaVasca Navale 84, 00146 Rome (Italy); Muzzi, L [Dipartimento di Fisica ' E Amaldi' and Unita CNISM, Universita Roma Tre, Via dellaVasca Navale 84, 00146 Rome (Italy); Galluzzi, V [ENEA-Frascati, Via Enrico Fermi 45, 00044 Frascati, Rome (Italy); Marcon, R [Dipartimento di Fisica ' E Amaldi' and Unita CNISM, Universita Roma Tre, Via dellaVasca Navale 84, 00146 Rome (Italy); Silva, E [Dipartimento di Fisica ' E Amaldi' and Unita CNISM, Universita Roma Tre, Via dellaVasca Navale 84, 00146 Rome (Italy)

    2007-10-15

    We reconsider the problem of the measurements of the microwave complex surface impedance in thin superconducting films deposited on SrTiO{sub 3} substrates. We perform measurements of the complex surface impedance Z{sub s}' = R{sub s}'+i{delta}X{sub s}' of thin YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} films deposited by laser ablation on SrTiO{sub 3} substrates. The typical oscillations due to the strong temperature variation of the SrTiO{sub 3} permittivity are confirmed in R{sub s}' and observed in {delta}X{sub s}'. The effects of the SrTiO{sub 3} substrate are evident even well below the superconducting transition temperature of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}. Similarly to previous works, we describe the overall response in terms of impedance transformations. We extend the known results by (i) considering the measurements of the imaginary part (ii) comparing the measurements to the absolute dc resistivity measured on the same sample, and (iii) suggesting a method for measuring the intrinsic thin film surface impedance by adjusting the substrate impedance. To demonstrate the feasibility of microwave measurements of intrinsic properties of films grown onto SrTiO{sub 3} substrates, we check the proposed method by measuring the field dependent surface impedance before and after removal of the substrate resonance.

  6. Direct synthesis of multi-layer graphene film on various substrates by microwave plasma at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyun Jae [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Ahn, Byung Wook; Kim, Tae Yoo; Lee, Jung Woo [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Yong Ho; Choi, Yong Sup [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Song, Young Il, E-mail: physein01@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Su Jeong, E-mail: suhsj@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-07-31

    We introduce a possible route for vertically standing multi-layer graphene films (VMGs) on various substrates at low temperature by electron cyclone resonance microwave plasma. VMG films on various substrates, including copper sheet, glass and silicon oxide wafer, were analyzed by studying their structural, electrical, and optical properties. The density and temperature of plasma were measured using Cylindrical Langmuir probe analysis. The morphologies and microstructures of multi-layer graphene were characterized using field emission scattering electron microscope, high resolution transmission electron microscope, and Raman spectra measurement. The VMGs on different substrates at the same experimental conditions synthesized the wrinkled VMGs with different heights. In addition, the transmittance and electrical resistance were measured using ultra-violet visible near-infrared spectroscopy and 4 probe point surface resistance measurement. The VMGs on glass substrate obtained a transmittance of 68.8% and sheet resistance of 796 Ω/square, whereas the VMGs on SiO{sub 2} wafer substrate showed good sheet resistance of 395 Ω/square and 278 Ω/square. The results presented herein demonstrate a simple method of synthesizing of VMGs on various substrates at low temperature for mass production, in which the VMGs can be used in a wide range of application fields for energy storage, catalysis, and field emission due to their unique orientation. - Highlights: • We present for synthesis method of graphene at low temperature on various substrates. • We grow the graphene films at low temperature under of 432 °C. • Structural information of graphene films were studied upon Raman spectroscopy. • Inter-layer spacing of vertically standing graphene relies on synthesis time. • We measured a transmittance and a resistance for graphene films on difference substrate.

  7. Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

    Energy Technology Data Exchange (ETDEWEB)

    Das, Sayantan; Alford, T. L. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, USA and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-06-28

    Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

  8. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM SUBSTRATES. PART I: CHARACTERIZATION OF FILMS AND FILM/SUBSTRATE INTERFACES

    Science.gov (United States)

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 Å in thickness) were deposited onto aluminum substrates (6111-T4 alloy) in radio frequency (RF) and microwave (MW) powered reactors to be used as primers for structural adhesive bonding. Processing variables such as sub...

  9. Synthesis of BiFeO3 thin films on single-terminated Nb : SrTiO3 (111 substrates by intermittent microwave assisted hydrothermal method

    Directory of Open Access Journals (Sweden)

    Ivan Velasco-Davalos

    2016-06-01

    Full Text Available We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO3 (111 substrates and the deposition of ferroelectric BiFeO3 thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO34− or Ti4+ layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d111 and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO3 single crystal substrates. Multiferroic BiFeO3 thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO3 (111 substrates. Bi(NO33 and Fe(NO33 along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO3 films on Nb : SrTiO3 (100 substrates was verified by piezoresponse force microscopy.

  10. Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Tiwari, Rajanish N.; Chang Li

    2010-01-01

    Diamond nucleation on unscratched Si surface is great importance for its growth, and detailed understanding of this process is therefore desired for many applications. The pretreatment of the substrate surface may influence the initial growth period. In this study, diamond films have been synthesized on adamantane-coated crystalline silicon {100} substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases without the application of a bias voltage to the substrates. Prior to adamantane coating, the Si substrates were not pretreated such as abraded/scratched. The substrate temperature was ∼530 deg. C during diamond deposition. The deposited films are characterized by scanning electron microscopy, Raman spectrometry, x-ray diffraction, and x-ray photoelectron spectroscopy. These measurements provide definitive evidence for high-crystalline quality diamond film, which is synthesized on a SiC rather than clean Si substrate. Characterization through atomic force microscope allows establishing fine quality criteria of the film according to the grain size of nanodiamond along with SiC. The diamond films exhibit a low-threshold (55 V/μm) and high current-density (1.6 mA/cm 2 ) field-emission (FE) display. The possible mechanism of formation of diamond films and their FE properties have been demonstrated.

  11. Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yu Shengwang, E-mail: bkdysw@yahoo.cn; Fan Pengwei; Tang Weizhong; Li Xiaojing; Hu Haolin; Hei Hongjun; Zhang Sikai; Lu Fanxiu

    2011-11-01

    SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH{sub 3}){sub 4}) diluted in H{sub 2} as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion of the films. Experimental results show that the deposition pressure has great influence on morphologies and phase composition of the films. In sequence, SiC films with a cauliflower-like microstructure, granular films with terrace-featured SiC particles coexisting with Co{sub 2}Si compound and clusters of nanometer SiC nanoplatelets appear as a function of the deposition pressure. In terms of plasma density and substrate temperature, this sequential appearance of microstructures of SiC films was explained. Adhesion tests showed that among the three types of films studied, the films with the terrace-featured SiC particles have relatively higher adhesion. Such knowledge will be of importance when the SiC films are used as interlayer between diamond films and cemented carbide substrates.

  12. Pressure dependence of morphology and phase composition of SiC films deposited by microwave plasma chemical vapor deposition on cemented carbide substrates

    International Nuclear Information System (INIS)

    Yu Shengwang; Fan Pengwei; Tang Weizhong; Li Xiaojing; Hu Haolin; Hei Hongjun; Zhang Sikai; Lu Fanxiu

    2011-01-01

    SiC films were deposited on cemented carbide substrates by employing microwave plasma chemical vapor deposition method using tetramethylsilane (Si(CH 3 ) 4 ) diluted in H 2 as the precursor. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and scratching technique were used to characterize morphology, composition, phases present and adhesion of the films. Experimental results show that the deposition pressure has great influence on morphologies and phase composition of the films. In sequence, SiC films with a cauliflower-like microstructure, granular films with terrace-featured SiC particles coexisting with Co 2 Si compound and clusters of nanometer SiC nanoplatelets appear as a function of the deposition pressure. In terms of plasma density and substrate temperature, this sequential appearance of microstructures of SiC films was explained. Adhesion tests showed that among the three types of films studied, the films with the terrace-featured SiC particles have relatively higher adhesion. Such knowledge will be of importance when the SiC films are used as interlayer between diamond films and cemented carbide substrates.

  13. Plasma CVD reactor with two-microwave oscillators for diamond film synthesis

    International Nuclear Information System (INIS)

    Nagatsu, M.; Miyake, M.; Maeda, J.

    2006-01-01

    In this study, we present the experimental results of a new type of microwave plasma CVD system, where two of 1.5 kW microwave sources were used for enlarging the plasma discharge and the diamond film growth. One of the microwave oscillators was used to produce the microwave plasma as in the conventional microwave plasma CVD device, while the second one was used to enlarge the plasma by introducing microwave from the launcher mounted at the substrate stage. We demonstrated the enlargement of plasma discharge area from 60 mm to 100 mm in diameter by using the two-microwave oscillators system. Characteristics of diamond films deposited using H 2 /CH 4 plasmas were also investigated using a scanning electron microscope (SEM) and Raman spectroscopy

  14. Synthesis of BiFeO{sub 3} thin films on single-terminated Nb : SrTiO{sub 3} (111) substrates by intermittent microwave assisted hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Velasco-Davalos, Ivan; Ambriz-Vargas, Fabian; Kolhatkar, Gitanjali; Thomas, Reji, E-mail: ruediger@emt.inrs.ca, E-mail: reji.thomas@emt.inrs.ca; Ruediger, Andreas, E-mail: ruediger@emt.inrs.ca, E-mail: reji.thomas@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650 Lionel-Boulet, Varennes, Québec, J3X1S2 (Canada)

    2016-06-15

    We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO{sub 3} (111) substrates and the deposition of ferroelectric BiFeO{sub 3} thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO{sub 3}){sup 4−} or Ti{sup 4+} layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d{sub 111}) and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO{sub 3} single crystal substrates. Multiferroic BiFeO{sub 3} thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO{sub 3} (111) substrates. Bi(NO{sub 3}){sub 3} and Fe(NO{sub 3}){sub 3} along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO{sub 3} films on Nb : SrTiO{sub 3} (100) substrates was verified by piezoresponse force microscopy.

  15. Characterization of Alq3 thin films by a near-field microwave microprobe.

    Science.gov (United States)

    Hovsepyan, Artur; Lee, Huneung; Sargsyan, Tigran; Melikyan, Harutyun; Yoon, Youngwoon; Babajanyan, Arsen; Friedman, Barry; Lee, Kiejin

    2008-09-01

    We observed tris-8-hydroxyquinoline aluminum (Alq3) thin films dependence on substrate heating temperatures by using a near-field microwave microprobe (NFMM) and by optical absorption at wavelengths between 200 and 900 nm. The changes of absorption intensity at different substrate heating temperatures are correlated to the changes in the sheet resistance of Alq3 thin films.

  16. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

    International Nuclear Information System (INIS)

    Yu, Ying; Zhan, Qingfeng; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Wang, Baomin; Li, Run-Wei; Wei, Jinwu; Wang, Jianbo; Xie, Shuhong

    2015-01-01

    Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices

  17. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

    Science.gov (United States)

    Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

    2015-04-01

    Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

  18. Forming method of a functional layer-built film by micro-wave plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Keishi

    1988-11-18

    In forming an amorphous semi-conductor material film, the micro-wave plasma CVD cannot be generally used because of such demerits as film-separation, low yield, columnar structure in the film, and problems in the optical and electrical properties. In this invention, a specific substrate is placed in a layer-built film forming unit which is capable of maintaining vacuum; raw material gas for the film formation is introduced; plasma is generated by a micro-wave energy to decompose the raw material gas, thus forming the layer-built film on the substarte. Then a film is made by adding a specific amount of calcoganide-containing gas to the raw material gas. By this, the utilization efficiency of the raw material gas gets roughly 100% and both the adhesion to the substrate and the structural flexibility of the layer-built film increase, enhancing the yield of forming various functional elements (sensor, solar cell, thin transistor film, etc.), and thus greatly reducing the production cost. 6 figs., 7 tabs.

  19. Properties of HTS YBCO thin films deposited on tilted NdGaO3 substrates

    International Nuclear Information System (INIS)

    Nurgaliev, T.; Donchev, T.; Mateev, E.; Miteva, S.; Mozhaev, P.B.; Mozhaeva, J.E.

    2005-01-01

    Thin YBa 2 Cu 3 O 7 films were fabricated by 2-opposed DC magnetron sputtering onto NdGaO 3 substrates, tilted from standard (1 1 0) orientation by 0-26 deg , and their surface morphology and electrical characteristics were investigated. Normal state resistivity (at 295 K) and microwave surface resistance (at 77 K and ∼8 GHz) of the films demonstrated anisotropy, introduced by the tilted substrate, and some improvement of the superconducting parameters of the films was observed at small tilt angles (θ ∼ 1.5-3 deg ). The increase of the microwave surface resistance at high tilt angles for the current tracks, perpendicular to the steps of the substrate, was described in the framework of a simple model, which takes into account the complex conductivity of the film and the weak links between the film terraces

  20. Properties of HTS YBCO thin films deposited on tilted NdGaO{sub 3} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nurgaliev, T. [Laboratory of Superconductivity and Cryoelectronics, Institute of Electronics BAS, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria)]. E-mail: timur@ie.bas.bg; Donchev, T. [Laboratory of Superconductivity and Cryoelectronics, Institute of Electronics BAS, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Mateev, E. [Laboratory of Superconductivity and Cryoelectronics, Institute of Electronics BAS, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Miteva, S. [Laboratory of Superconductivity and Cryoelectronics, Institute of Electronics BAS, 72 Tsarigradsko Chausse, 1784 Sofia (Bulgaria); Mozhaev, P.B. [Institute of Physics and Technology RAS, Nakhimovsky Ave. 36, 117218 Moscow (Russian Federation); Mozhaeva, J.E. [Institute of Physics and Technology RAS, Nakhimovsky Ave. 36, 117218 Moscow (Russian Federation)

    2005-03-15

    Thin YBa{sub 2}Cu{sub 3}O{sub 7} films were fabricated by 2-opposed DC magnetron sputtering onto NdGaO{sub 3} substrates, tilted from standard (1 1 0) orientation by 0-26 deg , and their surface morphology and electrical characteristics were investigated. Normal state resistivity (at 295 K) and microwave surface resistance (at 77 K and {approx}8 GHz) of the films demonstrated anisotropy, introduced by the tilted substrate, and some improvement of the superconducting parameters of the films was observed at small tilt angles ({theta} {approx} 1.5-3 deg ). The increase of the microwave surface resistance at high tilt angles for the current tracks, perpendicular to the steps of the substrate, was described in the framework of a simple model, which takes into account the complex conductivity of the film and the weak links between the film terraces.

  1. Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate

    Science.gov (United States)

    Wang, Yan-Feng; Chang, Xiaohui; Liu, Zhangcheng; Liu, Zongchen; Fu, Jiao; Zhao, Dan; Shao, Guoqing; Wang, Juan; Zhang, Shaopeng; Liang, Yan; Zhu, Tianfei; Wang, Wei; Wang, Hong-Xing

    2018-05-01

    Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

  2. Comparative study of experimental and numerical behaviors of microwave absorbers based on ultrathin Al and Cu films

    Energy Technology Data Exchange (ETDEWEB)

    Costa, D.S., E-mail: daniel_eng_aero@hotmail.com [Instituto de Ciência e Tecnologia/UNIFESP, Rua Talim, 330, CEP 12.231-280, São José dos Campos, SP (Brazil); Nohara, E.L. [Universidade de Taubaté, Rua Daniel Danelli, s/n, CEP 12060-440, Taubaté, SP (Brazil); Rezende, M.C. [Instituto de Ciência e Tecnologia/UNIFESP, Rua Talim, 330, CEP 12.231-280, São José dos Campos, SP (Brazil)

    2017-06-15

    The study of radar absorbing materials increasingly thin, lightweight and flexible has gained growing importance in recent years. In military area these characteristics allow the reduction of weight and volume of platforms, and in civilian sector these materials stimulate innovative projects of electronic and microwave devices. The present work was devoted to studying ultrathin films of Al (20–80 nm) and Cu (10–100 nm) deposited on poly(ethylene terephthalate) (PET) substrate by magnetron sputtering technique. The electrical conductivity values of the films were determined by 4 probes method, the S parameters (S{sub 11} and S{sub 12}) were obtained by transmission line using a X-band waveguide and the skin depth calculated. The results show the dependence of the electrical conductivity with the thickness for both films. The experimental values of microwave attenuation were compared with calculated values based on the equivalent electric circuit theory. This comparison shows a good adjustment and confirms the use of electrical conductivity measurements to predict the microwave absorption behavior of ultrathin films. - Highlights: • This article focuses on recent progresses in ultrathin films aiming microwave absorption. • Nanometric films of Al and Cu deposited on poly(ethylene terephthalate) substrate were produced. • Electrical conductivity (4-probes) and S-parameters (S{sub 11} and S{sub 12}) of nanofilms were measured. • Calculated microwave attenuations were obtained based on the equivalent electric circuit theory. • A good fit between experimental and predictions data of microwave absorption was observed.

  3. Comparative study of experimental and numerical behaviors of microwave absorbers based on ultrathin Al and Cu films

    International Nuclear Information System (INIS)

    Costa, D.S.; Nohara, E.L.; Rezende, M.C.

    2017-01-01

    The study of radar absorbing materials increasingly thin, lightweight and flexible has gained growing importance in recent years. In military area these characteristics allow the reduction of weight and volume of platforms, and in civilian sector these materials stimulate innovative projects of electronic and microwave devices. The present work was devoted to studying ultrathin films of Al (20–80 nm) and Cu (10–100 nm) deposited on poly(ethylene terephthalate) (PET) substrate by magnetron sputtering technique. The electrical conductivity values of the films were determined by 4 probes method, the S parameters (S_1_1 and S_1_2) were obtained by transmission line using a X-band waveguide and the skin depth calculated. The results show the dependence of the electrical conductivity with the thickness for both films. The experimental values of microwave attenuation were compared with calculated values based on the equivalent electric circuit theory. This comparison shows a good adjustment and confirms the use of electrical conductivity measurements to predict the microwave absorption behavior of ultrathin films. - Highlights: • This article focuses on recent progresses in ultrathin films aiming microwave absorption. • Nanometric films of Al and Cu deposited on poly(ethylene terephthalate) substrate were produced. • Electrical conductivity (4-probes) and S-parameters (S_1_1 and S_1_2) of nanofilms were measured. • Calculated microwave attenuations were obtained based on the equivalent electric circuit theory. • A good fit between experimental and predictions data of microwave absorption was observed.

  4. Integrated-circuit microwave detector based on granular high-Tc thin films. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Drobinin, A.V.; Lutovinov, V.S.; Starostenko, I.V. (Moscow Inst. of Radioengineering, Electronics and Automation, (MIREA), Moscow (USSR))

    1991-12-01

    A highly sensitive integrative-circuit microwave detector based on granular High-Tc film has been designed. All matching circuits and High-Tc microbridge are located on the same substrate. The voltage responsivity 10{sup 3} V/W has been found at 65 K and frequency 5 GHz. Different modes of microwave detection have been observed: bolometric response near Tc in high-quality films, rectification mode caused by an array of weak links dominating in low-quality films, detection caused by nonlinear magnetic flux motion. (orig.).

  5. Microwave assisted in situ synthesis of Ag–NaCMC films and their reproducible surface-enhanced Raman scattering signals

    International Nuclear Information System (INIS)

    Jiang, Tao; Li, Junpeng; Zhang, Li; Wang, Binbing; Zhou, Jun

    2014-01-01

    Graphical abstract: Two kinds of Ag–NaCMC films for surface-enhanced Raman scattering (SERS) were prepared by conventional heating and microwave assisted in situ reduction methods without any additional capping or reducing agents. A relatively narrow and symmetric surface plasmon resonance band was observed in the absorption spectra of the films fabricated by the microwave assisted in situ reduction method. More uniform silver nanoparticles (NPs) implied by the symmetric absorption spectrum were further confirmed by the scanning electron microscopy images. After the simulation of the E-field intensity distribution around the silver NPs in NaCMC film, the Raman scattering enhancement factors (EFs) of these films were then investigated with 4-mercaptobenzoic acid molecule as a SERS reporter. Improved reproducibility of SERS signal was obtained in the microwave assisted synthesized Ag–NaCMC film, although it maintained an EF as only 1.11 × 10 8 . The reproducible SERS signal of the Ag–NaCMC film is particularly attractive and this microwave assisted in situ reduction method is suitable for the production of excellent substrate for biosensor application. - Highlights: • The synthesis of Ag–NaCMC films was successfully fulfilled by a low-cost microwave method. • More uniform silver nanoparticles were observed in Ag–NaCMC film synthesized by microwave. • Improved reproducibility of SERS signal was obtained in microwave synthesized Ag–NaCMC film. - Abstract: Two kinds of Ag–NaCMC films for surface-enhanced Raman scattering (SERS) were prepared by conventional heating and microwave assisted in situ reduction methods without any additional capping or reducing agents. A relatively narrow and symmetric surface plasmon resonance band was observed in the absorption spectra of the films fabricated by the microwave assisted in situ reduction method. More uniform silver nanoparticles (NPs) implied by the symmetric absorption spectrum were further confirmed by

  6. Improving surface-enhanced Raman scattering effect using gold-coated hierarchical polystyrene bead substrates modified with postgrowth microwave treatment.

    Science.gov (United States)

    Yuen, Clement; Zheng, Wei; Huang, Zhiwei

    2008-01-01

    We report a novel postgrowth microwave heating implementation by selectively modifying hierarchical polystyrene (PS) bead substrates coated with gold (Au) films to effectively improve the surface-enhanced Raman scattering (SERS) effect on the analytes. The SERS signal of probe molecule rhodamine 6G (Rh 6G) on the microwave-treated Au-PS substrates can be improved by 10-fold, while the detection limit of Rh 6G in concentration can be enhanced by two orders of magnitude compared to the as-growth substrates. The high-quality SERS spectrum of saliva can also be acquired using the modified substrates, demonstrating the potential for the realization of the high-performance SERS substrates for biomedical applications.

  7. Loss mechanisms in superconducting thin film microwave resonators

    Energy Technology Data Exchange (ETDEWEB)

    Goetz, Jan, E-mail: jan.goetz@wmi.badw.de; Haeberlein, Max; Wulschner, Friedrich; Zollitsch, Christoph W.; Meier, Sebastian; Fischer, Michael; Fedorov, Kirill G.; Menzel, Edwin P. [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Physik-Department, Technische Universität München, 85748 Garching (Germany); Deppe, Frank; Eder, Peter; Xie, Edwar; Gross, Rudolf, E-mail: rudolf.gross@wmi.badw.de [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Physik-Department, Technische Universität München, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 München (Germany); Marx, Achim [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany)

    2016-01-07

    We present a systematic analysis of the internal losses of superconducting coplanar waveguide microwave resonators based on niobium thin films on silicon substrates. In particular, we investigate losses introduced by Nb/Al interfaces in the center conductor, which is important for experiments where Al based Josephson junctions are integrated into Nb based circuits. We find that these interfaces can be a strong source for two-level state (TLS) losses, when the interfaces are not positioned at current nodes of the resonator. In addition to TLS losses, for resonators including Al, quasiparticle losses become relevant above 200 mK. Finally, we investigate how losses generated by eddy currents in conductive material on the backside of the substrate can be minimized by using thick enough substrates or metals with high conductivity on the substrate backside.

  8. Correlation of morphology and barrier properties of thin microwave plasma polymer films on metal substrate

    International Nuclear Information System (INIS)

    Barranco, V.; Carpentier, J.; Grundmeier, G.

    2004-01-01

    The barrier properties of thin model organosilicon plasma polymers layers on iron are characterised by means of electrochemical impedance spectroscopy (EIS). Tailored thin plasma polymers of controlled morphology and chemical composition were deposited from a microwave discharge. By the analysis of the obtained impedance diagrams, the evolution of the water uptake φ, coating resistance and polymer capacitance with immersion time were monitored and the diffusion coefficients of the water through the films were calculated. The impedance data correlated well with the chemical structure and morphology of the plasma polymer films with a thickness of less than 100 nm. The composition of the films were determined by means of infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The morphology of the plasma polymer surface and the interface between the plasma polymer and the metal were characterised using atomic force microscopy (AFM). It could be shown that, at higher pressure, the film roughness increases which is probably due to the adsorption of plasma polymer nanoparticles formed in the plasma bulk and the faster film growth. This leads to voids with a size of a few tens of nanometers at the polymer/metal interface. The film roughness increases from the interface to the outer surface of the film. By lowering the pressure and thereby slowing the deposition rate, the plasma polymers perfectly imitate the substrate topography and lead to an excellent blocking of the metal surface. Moreover, the ratio of siloxane bonds to methyl-silyl groups increases which implies that the crosslink density is higher at lower deposition rate. The EIS data consistently showed higher coating resistance as well as lower interfacial capacitance values and a better stability over time for the film deposited at slower pressure. The diffusion coefficient of water in thin and ultra-thin plasma

  9. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  10. Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

    International Nuclear Information System (INIS)

    Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

    2016-01-01

    Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

  11. The Barrier Properties of PET Coated DLC Film Deposited by Microwave Surface-Wave PECVD

    Science.gov (United States)

    Yin, Lianhua; Chen, Qiang

    2017-12-01

    In this paper we report the investigation of diamond-like carbon (DLC) deposited by microwave surface-wave plasma enhanced chemical vapor deposition (PECVD) on the polyethylene terephthalate (PET) web for the purpose of the barrier property improvement. In order to characterize the properties of DLC coatings, we used several substrates, silicon wafer, glass, and PET web and KBr tablet. The deposition rate was obtained by surface profiler based on the DLC deposited on glass substrates; Fourier transform infrared spectroscope (FTIR) was carried out on KBr tablets to investigate chemical composition and bonding structure; the morphology of the DLC coating was analyzed by atomic force microscope (AFM) on Si substrates. For the barrier properties of PET webs, we measured the oxygen transmission rate (OTR) and water vapor transmission rate (WVTR) after coated with DLC films. We addressed the film barrier property related to process parameters, such as microwave power and pulse parameter in this work. The results show that the DLC coatings can greatly improve the barrier properties of PET webs.

  12. Deconvoluting the mechanism of microwave annealing of block copolymer thin films.

    Science.gov (United States)

    Jin, Cong; Murphy, Jeffrey N; Harris, Kenneth D; Buriak, Jillian M

    2014-04-22

    The self-assembly of block copolymer (BCP) thin films is a versatile method for producing periodic nanoscale patterns with a variety of shapes. The key to attaining a desired pattern or structure is the annealing step undertaken to facilitate the reorganization of nanoscale phase-segregated domains of the BCP on a surface. Annealing BCPs on silicon substrates using a microwave oven has been shown to be very fast (seconds to minutes), both with and without contributions from solvent vapor. The mechanism of the microwave annealing process remains, however, unclear. This work endeavors to uncover the key steps that take place during microwave annealing, which enable the self-assembly process to proceed. Through the use of in situ temperature monitoring with a fiber optic temperature probe in direct contact with the sample, we have demonstrated that the silicon substrate on which the BCP film is cast is the dominant source of heating if the doping of the silicon wafer is sufficiently low. Surface temperatures as high as 240 °C are reached in under 1 min for lightly doped, high resistivity silicon wafers (n- or p-type). The influence of doping, sample size, and BCP composition was analyzed to rule out other possible mechanisms. In situ temperature monitoring of various polymer samples (PS, P2VP, PMMA, and the BCPs used here) showed that the polymers do not heat to any significant extent on their own with microwave irradiation of this frequency (2.45 GHz) and power (∼600 W). It was demonstrated that BCP annealing can be effectively carried out in 60 s on non-microwave-responsive substrates, such as highly doped silicon, indium tin oxide (ITO)-coated glass, glass, and Kapton, by placing a piece of high resistivity silicon wafer in contact with the sample-in this configuration, the silicon wafer is termed the heating element. Annealing and self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) and polystyrene-block-poly(methyl methacrylate) (PS

  13. Factors affecting the adhesion of microwave plasma deposited siloxane films on polycarbonate

    International Nuclear Information System (INIS)

    Muir, B.W.; Thissen, H.; Simon, G.P.; Murphy, P.J.; Griesser, H.J.

    2006-01-01

    The effects of a radiofrequency oxygen plasma pretreatment and residual water content in the substrate on the adhesion of microwave plasma deposited tetramethyldisiloxane thin films on Bisphenol-A polycarbonate (BPA-PC) were investigated. Samples were characterised using a crosshatch adhesion test, optical and electron microscopy, and X-ray photoelectron spectroscopy. It was found that the use of a low power (5 W) and low treatment time (0.1 s) oxygen plasma can improve adhesion while greater treatment times (1-30 s) and higher oxygen plasma powers (40 W) resulted in a decreased level of adhesion. In addition, it was shown that a BPA-PC water content greater than 90 ppm resulted in rapid adhesion failure of deposited films at the substrate-plasma polymer interface during outdoor weathering. All films degraded substantially when exposed to environmental weathering, indicating ageing reactions within the plasma polymer films themselves, and at the bulk polymer-coating interface

  14. Characterization of the microwave properties of superconducting films with high transition temperature

    International Nuclear Information System (INIS)

    Richter, W.; Klinger, M.; Daginnus, M.

    1989-01-01

    In the meantime high quality Y-Ba-Cu-O thin films were produced. The latest results show, that its surface resistances are clearly lower than the values of copper, measured at a temperature of 77 K and up to frequencies of 86 GHz. This examination had the aim to produce high-T c films with a simple and low cost method, to use them as transmission lines at frequencies up to 30 GHz and above. A screen printing process was investigated, and high-T c thick films were fabricated on several substrates. Superconducting transition temperatures up to 80 K (dc zero resistance) were obtained. The films showed no complete magnetic shielding, and its microwave surface resistances were clearly higher than that ones for copper. The a. c. Josephson effect was proved with granular structures of bulk Y-Ba-Cu-O material and with screen printed thick films. Because of its high surface resistances, these thick films are unsuitable for the use as transmission lines at high frequencies. However, the a.c. Josephson effect can be used to manufacture microwave sensors in bulk Y-Ba-Cu-O and screen printed films of Y-Ba-Cu-O, which have a favourable geometric structure. (orig.) With 16 refs., 2 tabs., 24 figs [de

  15. Multicomponent doped barium strontium titanate thin films for tunable microwave applications

    Science.gov (United States)

    Alema, Fikadu Legesse

    In recent years there has been enormous progress in the development of barium strontium titanate (BST) films for tunable microwave applications. However, the properties of BST films still remain inferior compared to bulk materials, limiting their use for microwave technology. Understanding the film/substrate mismatch, microstructure, and stoichiometry of BST films and finding the necessary remedies are vital. In this work, BST films were deposited via radio frequency magnetron sputtering method and characterized both analytically and electrically with the aim of optimizing their properties. The stoichiometry, crystal structure, and phase purity of the films were studied by varying the oxygen partial pressure (OPP) and total gas pressure (TGP) in the chamber. A better stoichiometric match between film and target was achieved when the TGP is high (> 30 mTorr). However, the O2/Ar ratio should be adjusted as exceeding a threshold of 2 mTorr in OPP facilitates the formation of secondary phases. The growth of crystalline film on platinized substrates was achieved only with a lower temperature grown buffer layer, which acts as a seed layer by crystallizing when the temperature increases. Concurrent Mg/Nb doping has significantly improved the properties of BST thin films. The doped film has shown an average tunability of 53%, which is only ˜8 % lower than the value for the undoped film. This drop is associated with the Mg ions whose detrimental effects are partially compensated by Nb ions. Conversely, the doping has reduced the dielectric loss by ˜40 % leading to a higher figure of merit. Moreover, the two dopants ensure a charge neutrality condition which resulted in significant leakage current reduction. The presence of large amounts of empty shallow traps related to Nb Ti localize the free carriers injected from the contacts; thus increase the device control voltage substantially (>10 V). A combinatorial thin film synthesis method based on co-sputtering of two BST

  16. Realization of hexagonal barium ferrite thick films on Si substrates using a screen printing technique

    International Nuclear Information System (INIS)

    Chen Yajie; Smith, Ian; Geiler, Anton L; Vittoria, Carmine; Harris, Vincent G; Zagorodnii, Volodymyr; Celinski, Zbigniew

    2008-01-01

    Hexagonal barium ferrite thick films (50-200 μm) have been deposited on Si and Al 2 O 3 /Si substrates using a screen printing technique. X-ray diffractometry, scanning electron microscopy and magnetometry were used to characterize and correlate the ferrite films' microstructure and magnetic properties. The experiments indicated that an Al 2 O 3 underlayer was effective in preventing silicon diffusion into the barium ferrite films during a final sintering treatment at temperatures above 1100 deg. C. A two-stage sintering process allowed a reasonable tradeoff between mechanical and magnetic properties. This work reveals the feasibility of fabrication of thick ferrite films on large substrates (up to 25 mm in diameter) for future planar microwave devices compatible with semiconductor integrated circuits processing

  17. Probing the local microwave properties of superconducting thin films by a scanning microwave near-field microscope

    CERN Document Server

    Wu, L Y; Wang, K L; Jiang, T; Kang, L; Yang, S Z; Wu, P H

    2002-01-01

    In this paper, we present our approach to probe the local microwave properties of superconducting thin films by using the microwave near-field scanning technique. We have employed a coaxial cavity together with a niobium tip as the probe and established a scanning sample stage cooled by liquid nitrogen to study thin film devices at low temperature in our scanning microwave near-field microscope. Nondestructive images have been obtained on the inhomogeneity of the YBaCuO superconducting thin films at microwave frequency. We believe that these results would be helpful in evaluating the microwave performance of the devices.

  18. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  19. Surface resistances of 5-cm-diameter YBCO films prepared by MOD for microwave applications

    International Nuclear Information System (INIS)

    Manabe, T.; Sohma, M.; Yamaguchi, I.; Tsukada, K.; Kondo, W.; Kamiya, K.; Tsuchiya, T.; Mizuta, S.; Kumagai, T.

    2006-01-01

    Large-area high-T c superconducting films with low surface resistances R s are required for use in microwave applications such as band pass filters. In this paper, preparation of 5-cm-diameter YBCO films on LaAlO 3 (LAO) and CeO 2 -buffered sapphire (CbS) substrates by metalorganic deposition (MOD) using a fluorine-free coating solution and their superconducting properties are described. The optimum firing conditions for YBCO films greatly depend on the substrate materials; a heating rate at ramp as high as 200 deg. C /min is necessary for films on LAO whereas a lower heating rate, e.g., 20 deg. C /min, is required for films on CbS. Accordingly, the suitable furnace systems for these substrates have been varied. As a result, a YBCO film with high J c (77 K) of 2.7 MA/cm 2 and a low R s (12 GHz, 77 K) of 0.54 mΩ was prepared on LAO by using an infrared image furnace. On the other hand, a YBCO film with a higher J c (77 K) of 4.0 MA/cm 2 and the same R s (12 GHz, 77 K) of 0.54 mΩ was prepared on CbS by using a tube furnace

  20. Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

    Science.gov (United States)

    Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

    2014-03-01

    In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

  1. Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ru Lili; Huang Jianjun; Gao Liang; Qi Bing

    2010-01-01

    Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp 3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1 x 10 9 Ω · cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.

  2. Silicon oxide barrier films deposited on PET foils in pulsed plasmas: influence of substrate bias on deposition process and film properties

    International Nuclear Information System (INIS)

    Steves, S; Bibinov, N; Awakowicz, P; Ozkaya, B; Liu, C-N; Ozcan, O; Grundmeier, G

    2013-01-01

    A widely used plastic for packaging, polyethylene terephtalate (PET) offers limited barrier properties against gas permeation. For many applications of PET (from food packaging to micro electronics) improved barrier properties are essential. A silicon oxide barrier coating of PET foils is applied by means of a pulsed microwave driven low-pressure plasma. While the adjustment of the microwave power allows for a control of the ion production during the plasma pulse, a substrate bias controls the energy of ions impinging on the substrate. Detailed analysis of deposited films applying oxygen permeation measurements, x-ray photoelectron spectroscopy and atomic force microscopy are correlated with results from plasma diagnostics describing the deposition process. The influence of a change in process parameters such as gas mixture and substrate bias on the gas temperature, electron density, mean electron energy, ion energy and the atomic oxygen density is studied. An additional substrate bias results in an increase in atomic oxygen density up to a factor of 6, although plasma parameter such as electron density of n e = 3.8 ± 0.8 × 10 17 m −3 and electron temperature of k B T e = 1.7 ± 0.1 eV are unmodified. It is shown that atomic oxygen densities measured during deposition process higher than n O = 1.8 × 10 21 m −3 yield in barrier films with a barrier improvement factor up to 150. Good barrier films are highly cross-linked and show a smooth morphology. (paper)

  3. Growth of thin SiC films on Si single crystal wafers with a microwave excited plasma of methane gas

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Morgen, Per

    2013-01-01

    Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction is diffusio......Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction...... lowdensity of these, and are otherwise very uniform and poly- crystalline. They are characterized with scanning electron microscopy, atomic force microscopy, X-ray photo- electron spectroscopy, X-ray diffraction, and hardnessmeasurements....

  4. Enhancement of adhesion between carbon nanotubes and polymer substrates using microwave irradiation

    International Nuclear Information System (INIS)

    Shim, Hyung Cheoul; Kwak, Yoon Keun; Han, Chang-Soo; Kim, Soohyun

    2009-01-01

    This paper reports the enhancement of adhesive strength between single-walled carbon nanotubes (SWNTs) and polymer substrates using microwave irradiation of 0-5 min duration at 2.45 GHz and 800 W. Field emission scanning electron microscopy images, ultraviolet-visible data and four-point probe sheet resistance measurement data indicate that microwave irradiation is effective for enhancement of adhesion between SWNTs and polymer substrates. SWNTs could be locally welded onto a polymer substrate due to their active response to microwave irradiation.

  5. Critical current density and microwave surface resistance of 5-cm-diameter YBCO films on LaAlO3 substrates prepared by MOD using an infrared image furnace

    International Nuclear Information System (INIS)

    Manabe, T.; Kondo, W.; Yamaguchi, I.; Sohma, M.; Tsuchiya, T.; Tsukada, K.; Mizuta, S.; Kumagai, T.

    2005-01-01

    Inductive critical current density (J c ) and microwave surface resistance (R s ) were investigated for 0.7-μm-thick epitaxial YBa 2 Cu 3 O 7-y (YBCO) films on 5-cm-diameter LaAlO 3 substrates prepared by a chemical solution-based metal organic deposition (MOD) process using an infrared image furnace. By varying the heating rate at ramp during the final heat treatment, we obtained various orientations of YBCO; the c- and a-axis orientation at a slower rate, i.e., 20-100 deg C/min while the pure c-axis orientation at a faster rate, 200 deg C/min. The c-axis-oriented YBCO films showed excellent superconducting properties; for example, a high inductive-J c (77 K) of 2.6 MA/cm 2 and low R s (12 GHz)'s of 0.24 and 0.52 mΩ at 50 and 77 K, respectively, by a sapphire rod resonator method. The c- and a-axis-oriented films exhibited a lower J c and a higher R s . It was found that the J c and R s values of MOD-derived YBCO films showed a strong correlation; approximately, R s is inversely proportional to J c . This correlation is in good agreement with a previous report by Ohshima et al. for sputtered-YBCO films on BaSnO 3 -buffered MgO substrates

  6. Microwave Josephson generation in thin film superconducting bridges

    International Nuclear Information System (INIS)

    Gubankov, V.N.; Koshelets, V.P.; Ovsyannikov, G.A.

    1975-01-01

    Thin-film bridges have some advantage over other types of superconducting weak links: good definition of electromagnetic parameters and of weak region geometry. Up to now Josephson properties of bridges have been investigated by using indirect methods (the effect of magnetic field on the critical current I 0 , the bridge behavior in a microwave field, etc.). Direct experimental observation of Josephson radiation from autonomous thin film bridges is reported. Microwave radiation in tin bridges of 'variable' thickness has been investigated where the thickness of the film forming the bridge is far less than the thickness of the bank films. (Auth.)

  7. Microwave loss mechanisms in Ba0.25Sr0.75TiO3 films

    International Nuclear Information System (INIS)

    Vorobiev, A.; Rundqvist, P.; Gevorgian, S.

    2005-01-01

    Trilayer Au(Pt)/Ba 0.25 Sr 0.75 TiO 3 /(Pt)Au thin film varactors are fabricated on high resistive Si substrate and characterized at dc, rf and microwave frequencies. In the frequency range of 10-45 GHz the varactors reveal relatively low losses, the loss tangent is less than 0.025 at 45 GHz. Due to the thick and highly conductive Pt/Au electrodes the metal losses are less than 10%. However, the loss tangent of the ferroelectric film is still 3-5 times higher than that in Ba 0.27 Sr 0.73 TiO 3 single crystal. The analysis of the dc field dependent loss tangent and permittivity in a wide frequency range show that these additional losses are mainly due to the charged defects. Extrapolation of measured low frequency (1 MHz) loss tangents to the microwave region using the power law ω 1/3 is in good agreement with the experiment. We assume that the oxygen vacancies within the grain boundaries of ferroelectric film act as charged defects and cause extrinsic microwave losses. The knowledge of the extrinsic loss mechanism and corresponding microstructure defects is useful in optimization of the varactor design, deposition, and/or annealing process and further improvement of the varactor performance

  8. High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

    International Nuclear Information System (INIS)

    Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

    2007-01-01

    A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

  9. RF and microwave noise suppression in a transmission line using Fe-Si-Al/Ni-Zn magnetic composite films

    International Nuclear Information System (INIS)

    Lee, J. W.; Hong, Y. K.; Kim, K.; Joo, J.; Yoon, Y. W.; Kim, S. W.; Kim, Y. B.; Kim, K. Y.

    2006-01-01

    Radio-frequency (RF) and microwave noise suppression by using magnetic composite films on a microstrip line (MSL) was studied in the frequency range from 50 MHz to 13.5 GHz. The MSL was composed of a Cu transmission line, dielectric materials, and a Cu substrate. The Fe-Si-Al/Ni-Zn magnetic composite films were placed on the MSL, and the reflection and the transmission characteristics were investigated. We observed that RF and microwave noise suppression caused by the Fe-Si-Al/Ni-Zn magnetic composite films varied with the concentration ratio of the sendust (Fe-Si-Al) and the Ni-Zn ferrite. The frequency dependence of the power loss due to the composite films on the MSL was measured and the power loss increased at higher frequencies with increasing concentration of the sendust in the composites. The electromagnetic interference shielding efficiencies of the magnetic composite films in the far-field region are also discussed.

  10. Microwave and Millimeter Wave Properties of Vertically-Aligned Single Wall Carbon Nanotubes Films

    Science.gov (United States)

    Haddadi, K.; Tripon-Canseliet, C.; Hivin, Q.; Ducournau, G.; Teo, E.; Coquet, P.; Tay, B. K.; Lepilliet, S.; Avramovic, V.; Chazelas, J.; Decoster, D.

    2016-05-01

    We present the experimental determination of the complex permittivity of vertically aligned single wall carbon nanotubes (SWCNTs) films grown on quartz substrates in the microwave regime from 10 MHz up to 67 GHz, with the electrical field perpendicular to the main axis of the carbon nanotubes (CNTs), based on coplanar waveguide transmission line approach together with the measurement of the microwave impedance of top metalized vertically—aligned SWCNTs grown on conductive silicon substrates up to 26 GHz. From coplanar waveguide measurements, we obtain a real part of the permittivity almost equal to unity, which is interpreted in terms of low carbon atom density (3 × 1019 at/cm3) associated with a very low imaginary part of permittivity (vertically aligned CNTs bundle equivalent to a low resistance reveals a good conductivity (3 S/cm) parallel to the CNTs axis. From these two kinds of data, we experimentally demonstrate the tensor nature of the vertically grown CNTs bundles.

  11. Bayesian inference of substrate properties from film behavior

    International Nuclear Information System (INIS)

    Aggarwal, R; Demkowicz, M J; Marzouk, Y M

    2015-01-01

    We demonstrate that by observing the behavior of a film deposited on a substrate, certain features of the substrate may be inferred with quantified uncertainty using Bayesian methods. We carry out this demonstration on an illustrative film/substrate model where the substrate is a Gaussian random field and the film is a two-component mixture that obeys the Cahn–Hilliard equation. We construct a stochastic reduced order model to describe the film/substrate interaction and use it to infer substrate properties from film behavior. This quantitative inference strategy may be adapted to other film/substrate systems. (paper)

  12. Effect of the heat flux direction on electrical properties of SrBi2Nb2O9 thin films crystallized using a microwave oven

    International Nuclear Information System (INIS)

    Vasconcelos, J.S.; Vasconcelos, N.S.L.S.; Zanetti, S.M.; Leite, E.R.; Varela, J.A.; Longo, E.

    2004-01-01

    Ferroelectric SrBi 2 Nb 2 O 9 (SBN) thin films were prepared by the polymeric precursors method and deposited by spin coating onto Pt/Ti/SiO 2 /Si substrate and crystallized using a domestic microwave oven. It was studied the influence of the heat flux direction and the duration of the thermal treatment on the films crystallization. An element with high dielectric loss, a SiC susceptor, was used to absorb the microwave energy and transfers the heat to the film. Influence of the susceptor position to the sample crystallization was verified, the susceptor was placed or below the substrate or above the film. The SBN perovskite phase was observed after a thermal treatment at 700 deg. C for 10 min when the susceptor was placed below the substrate and for 30 min when the susceptor was placed above the film. Electrical measurements revealed that the film crystallized at 700 deg. C for 10 min, with the susceptor placed below the film, presented dielectric constant, dielectric loss, remanent polarization and coercive field of, 67, 0.011, 4.2 μC/cm 2 and 27.5 kV/cm, respectively. When the films were crystallized at 700 deg. C for 30 min, with the susceptor placed above the film, the dielectric constant was 115 and the dissipation factor was around of 0.033, remanent polarization and coercive field were 10.8 μC/cm 2 and 170 kV/cm, respectively

  13. Analysis of influence of buffer layers on microwave propagation through high-temperature superconducting thin films

    International Nuclear Information System (INIS)

    Ceremuga, J.; Barton, M.; Miranda, F.

    1994-01-01

    Methods of analysis of microwave propagation through superconducting thin films with buffer layers on dielectric substrates have been discussed. Expressions describing the transmission coefficient S 21 through the structure and the complex conductivity sigma of a superconductor in an analytical form have been derived. The derived equations are valid for microwave propagation in waveguides as well as in free space with relevant definition of impedances. Using the obtained solutions, the influences of buffer layers' parameters (thickness, relative permittivity and loss tangent) on the transmission coefficient has been investigated using MATLAB. Simulations have been performed for 10 GHz transmission through YBa 2 Cu 3 O 7 films on sapphire with SrTiO 3 and CeO 2 buffer layers and on silicon with CaF 2 and YSZ buffer layers. To illustrate the simulations, measurements of the transmission through YBCO film on sapphire with SrTiO 3 buffer layer have been performed. It has been shown that even lossy buffer layers have very little impact (smaller than 1% in magnitude and 0.3% in phase) on the transmission coefficient through superconducting thin films, providing their thickness is below 10 mu m. (author)

  14. Application of HTSC-thin films in microwave bandpass filters

    International Nuclear Information System (INIS)

    Jha, A.R.

    1993-01-01

    This paper reveals unique performance capabilities of High-Temperature Superconducting Thin-Film (HTSCTFs) for possible applications in microwave bandpass filters (BPFs). Microwave filters fabricated with HTSCTFs have demonstrated lowest insertion loss, highest rejection, and sharpest skirt selectivity. Thin films of Yttrium Barium Copper Oxide (YBCO), Bismuth Strontium Calcium Copper Oxide (BSCCO) and Thallium Calcium Barium Copper Oxide (TCBCO) will be most attractive for filters

  15. Nanomechanics of hard films on compliant substrates.

    Energy Technology Data Exchange (ETDEWEB)

    Reedy, Earl David, Jr. (Sandia National Laboratories, Albuquerque, NM); Emerson, John Allen (Sandia National Laboratories, Albuquerque, NM); Bahr, David F. (Washington State University, Pullman, WA); Moody, Neville Reid; Zhou, Xiao Wang; Hales, Lucas (University of Minnesota, Minneapolis, MN); Adams, David Price (Sandia National Laboratories, Albuquerque, NM); Yeager,John (Washington State University, Pullman, WA); Nyugen, Thao D. (Johns Hopkins University, Baltimore, MD); Corona, Edmundo (Sandia National Laboratories, Albuquerque, NM); Kennedy, Marian S. (Clemson University, Clemson, SC); Cordill, Megan J. (Erich Schmid Institute, Leoben, Austria)

    2009-09-01

    Development of flexible thin film systems for biomedical, homeland security and environmental sensing applications has increased dramatically in recent years [1,2,3,4]. These systems typically combine traditional semiconductor technology with new flexible substrates, allowing for both the high electron mobility of semiconductors and the flexibility of polymers. The devices have the ability to be easily integrated into components and show promise for advanced design concepts, ranging from innovative microelectronics to MEMS and NEMS devices. These devices often contain layers of thin polymer, ceramic and metallic films where differing properties can lead to large residual stresses [5]. As long as the films remain substrate-bonded, they may deform far beyond their freestanding counterpart. Once debonded, substrate constraint disappears leading to film failure where compressive stresses can lead to wrinkling, delamination, and buckling [6,7,8] while tensile stresses can lead to film fracture and decohesion [9,10,11]. In all cases, performance depends on film adhesion. Experimentally it is difficult to measure adhesion. It is often studied using tape [12], pull off [13,14,15], and peel tests [16,17]. More recent techniques for measuring adhesion include scratch testing [18,19,20,21], four point bending [22,23,24], indentation [25,26,27], spontaneous blisters [28,29] and stressed overlayers [7,26,30,31,32,33]. Nevertheless, sample design and test techniques must be tailored for each system. There is a large body of elastic thin film fracture and elastic contact mechanics solutions for elastic films on rigid substrates in the published literature [5,7,34,35,36]. More recent work has extended these solutions to films on compliant substrates and show that increasing compliance markedly changes fracture energies compared with rigid elastic solution results [37,38]. However, the introduction of inelastic substrate response significantly complicates the problem [10,39,40]. As

  16. High temperature superconducting YBCO microwave filters

    Science.gov (United States)

    Aghabagheri, S.; Rasti, M.; Mohammadizadeh, M. R.; Kameli, P.; Salamati, H.; Mohammadpour-Aghdam, K.; Faraji-Dana, R.

    2018-06-01

    Epitaxial thin films of YBCO high temperature superconductor are widely used in telecommunication technology such as microwave filter, antenna, coupler and etc., due to their lower surface resistance and lower microwave loss than their normal conductor counterparts. Thin films of YBCO were fabricated by PLD technique on LAO substrate. Transition temperature and width were 88 K and 3 K, respectively. A filter pattern was designed and implemented by wet photolithography method on the films. Characterization of the filter at 77 K has been compared with the simulation results and the results for a made gold filter. Both YBCO and gold filters show high microwave loss. For YBCO filter, the reason may be due to the improper contacts on the feedlines and for gold filter, low thickness of the gold film has caused the loss increased.

  17. Pd thin films on flexible substrate for hydrogen sensor

    Energy Technology Data Exchange (ETDEWEB)

    Öztürk, Sadullah [Fatih Sultan Mehmet Vakıf University, Engineering Faculty, Istanbul (Turkey); Kılınç, Necmettin, E-mail: nkilinc@nigde.edu.tr [Nigde University, Mechatronics Engineering Department, 51245 Nigde (Turkey); Nigde University, Nanotechnology Application and Research Center, 51245 Nigde (Turkey)

    2016-07-25

    In this work, palladium (Pd) thin films were prepared via RF sputtering method with various thicknesses (6 nm, 20 nm and 60 nm) on both a flexible substrate and a hard substrate. Hydrogen (H{sub 2}) sensing properties of Pd films on flexible substrate have been investigated depending on temperatures (25–100 °C) and H{sub 2} concentrations (600 ppm – 10%). The effect of H{sub 2} on structural properties of the films was also studied. The films were characterized by Scanning Electron Microscopy (SEM) and X-ray diffraction. It is found that whole Pd films on hard substrate show permanent structural deformation after exposed to 10% H{sub 2} for 30 min. But, this H{sub 2} exposure does not causes any structural deformation for 6 nm Pd film on flexible substrate and 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2} concentration without any structural deformation. On the other hand, Pd film sensors that have the thicknesses 20 nm and 60 nm on flexible substrate are irreversible for higher H{sub 2} concentration (>2%) with film deformation. The sensor response of 6 nm Pd film on flexible substrate increased with increasing H{sub 2} concentration up 4% and then saturated. The sensitivity of the film decreased with increasing operation temperature. - Highlights: • Pd thin films fabricated by RF sputtering on both flexible and hard substrates. • Structural deformation observed for films on hard substrate after exposing 10% H{sub 2}. • 6 nm Pd film on flexible substrate shows reversible sensor response up to 10% H{sub 2}. • H{sub 2} sensing properties of film on flexible substrate investigated depending on temperature and concentration. • The sensitivity of the film decreased with increasing operation temperature.

  18. Microwave study of magnetic field penetration parallel to thin niobium films

    International Nuclear Information System (INIS)

    Grbic, M.S.; Janjusevic, D.; Pozek, M.; Dulcic, A.; Wagner, T.

    2007-01-01

    Complex conductivity of high quality niobium thin films has been investigated by microwave technique in parallel static magnetic field. For the 40 nm thick film no vortices can be formed and the microwave penetration is defined by the strength of the superconducting order parameter which varies with the applied magnetic field. 160 nm thick measured film allows formation of two rows of vortices. Microwave dissipiation is dominated by dynamics of vortices which is strongly affected by size effects. Results have been compared with the generalised models of complex conductivity for low-dimensional superconductor in mixed state following earlier considerations by other authors

  19. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

    International Nuclear Information System (INIS)

    Vinayak, Seema; Vyas, H.P.; Muraleedharan, K.; Vankar, V.D.

    2006-01-01

    Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R S ) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R S and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition

  20. Dewetting of thin polymer film on rough substrate: II. Experiment

    International Nuclear Information System (INIS)

    Volodin, Pylyp; Kondyurin, Alexey

    2008-01-01

    The theory of the dewetting process developed for a model of substrate-film interaction forces was examined by an experimental investigation of the dewetting process of thin polystyrene (PS) films on chemically etched silicon substrates. In the dependence on PS films thickness and silicon roughness, various situations of dewetting were observed as follows: (i) if the wavelength of the substrate roughness is much larger than the critical spinodal wavelength of a film, then spinodal dewetting of the film is observed; (ii) if the wavelength of the substrate roughness is smaller than the critical wavelength of the film and the substrate roughness is larger in comparison with film thickness, then the dewetting due to substrate roughness is observed and the dewetted film patterns repeat the rough substrate structure; (iii) if the wavelength of the substrate roughness is smaller than the critical wavelength of the film and the substrate roughness is small in comparison with the film thickness, then spinodal dewetting proceeds

  1. Adhesion of rhodium films on metallic substrates

    International Nuclear Information System (INIS)

    Marot, L.; Covarel, G.; Tuilier, M.-H.; Steiner, R.; Oelhafen, P.

    2008-01-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength

  2. Adhesion of rhodium films on metallic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Marot, L. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)], E-mail: laurent.marot@unibas.ch; Covarel, G.; Tuilier, M.-H. [Laboratoire Mecanique, Materiaux et Procedes de Fabrication, Pole STIC-SPI-Math 61 rue Albert Camus, Universite de Haute-Alsace, F-68093 - Mulhouse Cedex (France); Steiner, R.; Oelhafen, P. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2008-09-01

    Rhodium coated metallic films were prepared by magnetron sputtering on metallic substrates. All films were elaborated in same conditions on copper, molybdenum and stainless steel. Adhesion strength tests were carried out by scratch test. The results reveal that the adhesion strength between the film and the substrate is influenced by the hardness of the substrate. Increase of deposition temperature improves the adhesion of the coating. In addition, pre-treatment of substrates by a filtered cathodic vacuum arc and the layer thickness have has some effects on the final adhesion strength.

  3. Large dielectric constant ({epsilon}/{epsilon}{sub 0}>6000) Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} thin films for high-performance microwave phase shifters

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, C. M. [Department of Physics, University of Colorado, Boulder, Colorado 80309 (United States); Rivkin, T. V. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Parilla, P. A. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Perkins, J. D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Ginley, D. S. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kozyrev, A. B. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation); Oshadchy, V. N. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation); Pavlov, A. S. [Electrotechnical University of St. Petersburg, St. Petersburg, Russia 197376 (Russian Federation)

    2000-04-03

    We deposited epitaxial Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} (BST) films via laser ablation on MgO and LaAlO{sub 3} (LAO) substrates for tunable microwave devices. Postdeposition anneals ({approx}1100 degree sign C in O{sub 2}) improved the morphology and overall dielectric properties of films on both substrates, but shifted the temperature of maximum dielectric constant (T{sub max}) up for BST/LAO and down for BST/MgO. These substrate-dependent T{sub max} shifts had opposite effects on the room-temperature dielectric properties. Overall, BST films on MgO had the larger maximum dielectric constant ({epsilon}/{epsilon}{sub 0}{>=}6000) and tunability ({delta}{epsilon}/{epsilon}{>=}65%), but these maxima occurred at 227 K. 30 GHz phase shifters made from similar films had figures of merit (ratio of maximum phase shift to insertion loss) of {approx}45 degree sign /dB and phase shifts of {approx}400 degree sign under 500 V ({approx}13 V/{mu}m) bias, illustrating their utility for many frequency-agile microwave devices. (c) 2000 American Institute of Physics.

  4. Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

    International Nuclear Information System (INIS)

    Doerner, M.F.; Gardner, D.S.; Nix, W.D.

    1986-01-01

    Substrate curvature and submicron indentation measurements have been used recently to study plastic deformation in thin films on substrates. In the present work both of these techniques have been employed to study the strength of aluminum and tungsten thin films on silicon substrates. In the case of aluminum films on silicon substrates, the film strength is found to increase with decreasing thickness. Grain size variations with film thickness do not account for the variations in strength. Wafer curvature measurements give strengths higher than those predicted from hardness measurements suggesting the substrate plays a role in strengthening the film. The observed strengthening effect with decreased thickness may be due to image forces on dislocations in the film due to the elastically stiffer silicon substrate. For sputtered tungsten films, where the substrate is less stiff than the film, the film strength decreases with decreasing film thickness

  5. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    Science.gov (United States)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

  6. Microwave-assisted low temperature fabrication of ZnO thin film electrodes for solar energy harvesting

    Energy Technology Data Exchange (ETDEWEB)

    Nirmal Peiris, T.A.; Sagu, Jagdeep S.; Hazim Yusof, Y.; Upul Wijayantha, K.G., E-mail: U.Wijayantha@lboro.ac.uk

    2015-09-01

    Metallic Zn thin films were electrodeposited on fluorine-doped tin oxide (FTO) glass substrates and oxidized under air by conventional radiant and microwave post-annealing methods to obtain ZnO thin film electrodes. The temperature of each post-annealing method was varied systematically and the photoelectrochemical (PEC) performance of electrodes was evaluated. The best photocurrent density achieved by the conventional radiant annealing method at 425 °C for 15 min was 93 μA cm{sup −2} at 1.23 V vs. NHE and the electrode showed an incident photon-to-electron conversion efficiency (IPCE) of 28.2%. X-ray diffractogram of this electrode showed that the oxidation of Zn to ZnO was not completed during the radiant annealing process as evident by the presence of metallic Zn in the electrode. For the electrode oxidized from Zn to ZnO under microwave irradiation, a photocurrent of 130 μA cm{sup −2} at 1.23 V vs. NHE and IPCE of 35.6% was observed after annealing for just 3 min, during which the temperature reached 250 °C. The photocurrent was 40% higher for the microwave annealed sample; this increase was attributed to higher surface area by preserving the nanostructure, confirmed by SEM surface topographical analysis, and better conversion yields to crystalline ZnO. Overall, it was demonstrated that oxidation of Zn to ZnO can be accomplished by microwave annealing five times faster than that of conventional annealing, thus resulting in a ~ 75% power saving. This study shows that microwave processing of materials offers significant economic and performance advantages for industrial scale up. - Highlights: • Conversion of Zn to ZnO by microwave and radiant annealing was conducted. • Microwave conversion was 5 times faster compared to radiant annealing. • Photoelectrochemical performance of microwave annealed ZnO was 40% higher. • Microwave annealing results in a 75% energy saving.

  7. Microwave plasma-assisted photoluminescence enhancement in nitrogen-doped ultrananocrystalline diamond film

    Directory of Open Access Journals (Sweden)

    Yu Lin Liu

    2012-06-01

    Full Text Available Optical properties and conductivity of nitrogen-doped ultrananocrystal diamond (UNCD films were investigated following treatment with low energy microwave plasma at room temperature. The plasma also generated vacancies in UNCD films and provided heat for mobilizing the vacancies to combine with the impurities, which formed the nitrogen-vacancy defect centers. The generated color centers were distributed uniformly in the samples. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. The photoluminescence emitted by the plasma treated nitrogen-doped UNCD films was enhanced significantly compared to the untreated films.

  8. Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

    Science.gov (United States)

    McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

    2018-05-01

    Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

  9. Soft magnetism, magnetostriction, and microwave properties of FeGaB thin films

    International Nuclear Information System (INIS)

    Lou, J.; Insignares, R. E.; Cai, Z.; Ziemer, K. S.; Liu, M.; Sun, N. X.

    2007-01-01

    A series of (Fe 100-y Ga y ) 1-x B x (x=0-21 and y=9-17) films were deposited; their microstructure, soft magnetism, magnetostrictive behavior, and microwave properties were investigated. The addition of B changes the FeGaB films from polycrystalline to amorphous phase and leads to excellent magnetic softness with coercivity s , self-biased ferromagnetic resonance (FMR) frequency of 1.85 GHz, narrow FMR linewidth (X band) of 16-20 Oe, and a high saturation magnetostriction constant of 70 ppm. The combination of these properties makes the FeGaB films potential candidates for tunable magnetoelectric microwave devices and other rf/microwave magnetic device applications

  10. Iron films deposited on porous alumina substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Yasuhiro, E-mail: yyasu@rs.kagu.tus.ac.jp; Tanabe, Kenichi; Nishida, Naoki [Tokyo University of Science (Japan); Kobayashi, Yoshio [The University of Electro-Communications (Japan)

    2016-12-15

    Iron films were deposited on porous alumina substrates using an arc plasma gun. The pore sizes (120 – 250 nm) of the substrates were controlled by changing the temperature during the anodic oxidation of aluminum plates. Iron atoms penetrated into pores with diameters of less than 160 nm, and were stabilized by forming γ-Fe, whereas α-Fe was produced as a flat plane covering the pores. For porous alumina substrates with pore sizes larger than 200 nm, the deposited iron films contained many defects and the resulting α-Fe had smaller hyperfine magnetic fields. In addition, only a very small amount of γ-Fe was obtained. It was demonstrated that the composition and structure of an iron film can be affected by the surface morphology of the porous alumina substrate on which the film is grown.

  11. PET based nanocomposite films for microwave packaging applications

    International Nuclear Information System (INIS)

    Galdi, M. R.; Olivieri, R.; Liguori, L.; Albanese, D.; Di Matteo, M.; Di Maio, L.

    2015-01-01

    In recent years, changes in life standards have promoted the diffusion of Ready to Cook (RTC) and Ready to Eat (RTE) products for microwave ovens. However, the main limits in microwave (MW) ovens usage are often related to the proper choice of packaging materials suitable for such technology. In fact, packages for microwaveable RTC and RTE foods should ensure adequate preservation of the product before cooking/heating such as high barriers to gases and aromas and adequate control of water vapor transmission. In addition, microwaveable packaging material must be transparent to MW, thermally stable and resistant to the mechanical stress induced by the accumulation in the head space of volatile substances produced during the cooking. Polymeric materials are good candidates for microwaveable packaging thanks to their transparency to MW. In the last years a great interest is devoted to developing innovative solution based on the use of additives or systems that act as susceptors or heating enhancers for improving the characteristics of polymers in cooking/heating in MW ovens. The present work was focused on the production and characterization of nanocomposite copolyester based films suitable for microwaveable food packaging applications. The matrices selected consist in two PET copolymers modified with carbon black (ULTRA STD) and with titanium oxide (ULTRA NA). Nanocomposite co-extruded multilayer films were produced using different percentages (0%, 2% and 4%wt/wt) of Cloisite 20A (C20A). Films were analyzed for evaluating the effect of nanofiller on the morphology and barrier properties. Moreover, to verify the effectiveness of the designed systems in reducing the cooking times of meat products, MW heating tests were carried out on pork meat hamburgers in MW oven at varying supplied powers. The cooking tests have pointed out that the selected matrices are efficient in reducing cooking times and that even low concentration of C20A acts as heating enhancers of PET

  12. PET based nanocomposite films for microwave packaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Galdi, M. R., E-mail: mrgaldi@unisa.it; Olivieri, R.; Liguori, L.; Albanese, D., E-mail: dalbanese@unisa.it; Di Matteo, M.; Di Maio, L., E-mail: ldimaio@unisa.it [Industrial Engineering Department, University of Salerno, Via Giovanni Paolo II 132, 84084 Fisciano (Italy)

    2015-12-17

    In recent years, changes in life standards have promoted the diffusion of Ready to Cook (RTC) and Ready to Eat (RTE) products for microwave ovens. However, the main limits in microwave (MW) ovens usage are often related to the proper choice of packaging materials suitable for such technology. In fact, packages for microwaveable RTC and RTE foods should ensure adequate preservation of the product before cooking/heating such as high barriers to gases and aromas and adequate control of water vapor transmission. In addition, microwaveable packaging material must be transparent to MW, thermally stable and resistant to the mechanical stress induced by the accumulation in the head space of volatile substances produced during the cooking. Polymeric materials are good candidates for microwaveable packaging thanks to their transparency to MW. In the last years a great interest is devoted to developing innovative solution based on the use of additives or systems that act as susceptors or heating enhancers for improving the characteristics of polymers in cooking/heating in MW ovens. The present work was focused on the production and characterization of nanocomposite copolyester based films suitable for microwaveable food packaging applications. The matrices selected consist in two PET copolymers modified with carbon black (ULTRA STD) and with titanium oxide (ULTRA NA). Nanocomposite co-extruded multilayer films were produced using different percentages (0%, 2% and 4%wt/wt) of Cloisite 20A (C20A). Films were analyzed for evaluating the effect of nanofiller on the morphology and barrier properties. Moreover, to verify the effectiveness of the designed systems in reducing the cooking times of meat products, MW heating tests were carried out on pork meat hamburgers in MW oven at varying supplied powers. The cooking tests have pointed out that the selected matrices are efficient in reducing cooking times and that even low concentration of C20A acts as heating enhancers of PET.

  13. PET based nanocomposite films for microwave packaging applications

    Science.gov (United States)

    Galdi, M. R.; Olivieri, R.; Liguori, L.; Albanese, D.; Di Matteo, M.; Di Maio, L.

    2015-12-01

    In recent years, changes in life standards have promoted the diffusion of Ready to Cook (RTC) and Ready to Eat (RTE) products for microwave ovens. However, the main limits in microwave (MW) ovens usage are often related to the proper choice of packaging materials suitable for such technology. In fact, packages for microwaveable RTC and RTE foods should ensure adequate preservation of the product before cooking/heating such as high barriers to gases and aromas and adequate control of water vapor transmission. In addition, microwaveable packaging material must be transparent to MW, thermally stable and resistant to the mechanical stress induced by the accumulation in the head space of volatile substances produced during the cooking. Polymeric materials are good candidates for microwaveable packaging thanks to their transparency to MW. In the last years a great interest is devoted to developing innovative solution based on the use of additives or systems that act as susceptors or heating enhancers for improving the characteristics of polymers in cooking/heating in MW ovens. The present work was focused on the production and characterization of nanocomposite copolyester based films suitable for microwaveable food packaging applications. The matrices selected consist in two PET copolymers modified with carbon black (ULTRA STD) and with titanium oxide (ULTRA NA). Nanocomposite co-extruded multilayer films were produced using different percentages (0%, 2% and 4%wt/wt) of Cloisite 20A (C20A). Films were analyzed for evaluating the effect of nanofiller on the morphology and barrier properties. Moreover, to verify the effectiveness of the designed systems in reducing the cooking times of meat products, MW heating tests were carried out on pork meat hamburgers in MW oven at varying supplied powers. The cooking tests have pointed out that the selected matrices are efficient in reducing cooking times and that even low concentration of C20A acts as heating enhancers of PET.

  14. Buckyball microwave plasmas: Fragmentation and diamond-film growth

    International Nuclear Information System (INIS)

    Gruen, D.M.; Liu, Shengzhong; Krauss, A.R.; Pan, Xianzheng.

    1993-08-01

    Microwave discharges (2.45 GHz) have been generated in C 60 -containing Ar produced by flowing Ar over fullerene-containing soot. Optical spectroscopy shows that the spectrum is dominated by the d 3 Πg-a 3 Πu Swan bands of C 2 and particularly the Δv = -2, -1, 0, +1, and +2 sequences. These results give direct evidence that C 2 is one of the products of C 60 fragmentation brought about, at least in part, by collisionally induced dissociation (CID). C 60 has been used as a precursor in a plasma-enhanced chemical vapor deposition (PECVD) experiment to grow diamond-thin films. The films, grown in an Ar/H 2 gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H 2 , 1500 W, 850 degree C substrate temperature), were characterized with SEM, XRD, and Raman spectroscopy. Growth rate was found to be ∼ 0.6 μ/hr. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor, would be predicted at a carbon content of 1% based on C 60 . Energetic and mechanistic arguments are advanced to rationalize this result based on C 2 as the growth species

  15. Design and characteristics of L-C thin films filter at microwave frequency band

    Science.gov (United States)

    Kim, In-Sung; Min, Bok-Ki; Song, Jae-Sung

    2005-12-01

    Multifunction corresponding to multimedia age has furthermore required high integration to the devices at microwave band, so more evolution for multi-layer integration like system on chip(SoC) becomes to be necessary. In wireless mobile communication, portable mobile phones grew up to a huge market. Microwave devices have played an important role in the wireless communication systems. One challenge in the implementation of circuit integration is in the design of micro wave band pass filter with thin film MOM capacitor and spiral inductor. In this paper, Cu and TaO thin film with RF sputtering was deposited for inductor and capacitor on the SiO II/Si(100) substrate. MIM capacitor and spiral inductor was fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, an important devices for mobile communication. Based on the high-Q values of passive components, MIM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and was 5 dB for a 900 MHz filter. This paper also discusses a theoretical analysis and practical design to L-C band pass filter.

  16. Ag films deposited on Si and Ti: How the film-substrate interaction influences the nanoscale film morphology

    Science.gov (United States)

    Ruffino, F.; Torrisi, V.

    2017-11-01

    Submicron-thick Ag films were sputter deposited, at room temperature, on Si, covered by the native SiO2 layer, and on Ti, covered by the native TiO2 layer, under normal and oblique deposition angle. The aim of this work was to study the morphological differences in the grown Ag films on the two substrates when fixed all the other deposition parameters. In fact, the surface diffusivity of the Ag adatoms is different on the two substrates (higher on the SiO2 surface) due to the different Ag-SiO2 and Ag-TiO2 atomic interactions. So, the effect of the adatoms surface diffusivity, as determined by the adatoms-substrate interaction, on the final film morphology was analyzed. To this end, microscopic analyses were used to study the morphology of the grown Ag films. Even if the homologous temperature prescribes that the Ag film grows on both substrates in the zone I described by the structure zone model some significant differences are observed on the basis of the supporting substrate. In the normal incidence condition, on the SiO2/Si surface a dense close-packed Ag film exhibiting a smooth surface is obtained, while on the TiO2/Ti surface a more columnar film morphology is formed. In the oblique incidence condition the columnar morphology for the Ag film occurs both on SiO2/Si and TiO2/Ti but a higher porous columnar film is obtained on TiO2/Ti due to the lower Ag diffusivity. These results indicate that the adatoms diffusivity on the substrate as determined by the adatom-surface interaction (in addition to the substrate temperature) strongly determines the final film nanostructure.

  17. Hot Films on Ceramic Substrates for Measuring Skin Friction

    Science.gov (United States)

    Noffz, Greg; Leiser, Daniel; Bartlett, Jim; Lavine, Adrienne

    2003-01-01

    Hot-film sensors, consisting of a metallic film on an electrically nonconductive substrate, have been used to measure skin friction as far back as 1931. A hot film is maintained at an elevated temperature relative to the local flow by passing an electrical current through it. The power required to maintain the specified temperature depends on the rate at which heat is transferred to the flow. The heat transfer rate correlates to the velocity gradient at the surface, and hence, with skin friction. The hot-film skin friction measurement method is most thoroughly developed for steady-state conditions, but additional issues arise under transient conditions. Fabricating hot-film substrates using low-thermal-conductivity ceramics can offer advantages over traditional quartz or polyester-film substrates. First, a low conductivity substrate increases the fraction of heat convected away by the fluid, thus increasing sensitivity to changes in flow conditions. Furthermore, the two-part, composite nature of the substrate allows the installation of thermocouple junctions just below the hot film, which can provide an estimate of the conduction heat loss.

  18. The Field Emission Properties of Graphene Aggregates Films Deposited on Fe-Cr-Ni alloy Substrates

    Directory of Open Access Journals (Sweden)

    Zhanling Lu

    2010-01-01

    Full Text Available The graphene aggregates films were fabricated directly on Fe-Cr-Ni alloy substrates by microwave plasma chemical vapor deposition system (MPCVD. The source gas was a mixture of H2 and CH4 with flow rates of 100 sccm and 12 sccm, respectively. The micro- and nanostructures of the samples were characterized by Raman scattering spectroscopy, field emission scanning electron microscopy (SEM, and transparent electron microscopy (TEM. The field emission properties of the films were measured using a diode structure in a vacuum chamber. The turn-on field was about 1.0 V/m. The current density of 2.1 mA/cm2 at electric field of 2.4 V/m was obtained.

  19. Direct transfer of graphene films for polyurethane substrate

    Energy Technology Data Exchange (ETDEWEB)

    Vilani, C.; Romani, E.C.; Larrudé, D.G. [Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro, RJ (Brazil); Barbosa, Gelza M. [Diretoria de Sistemas de Armas da Marinha, Marinha do Brasil, 20010-00 Rio de Janeiro, RJ (Brazil); Freire, F.L., E-mail: lazaro@vdg.fis.puc-rio.br [Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro, RJ (Brazil); Centro Brasileiro de Pesquisas Físicas, 22290-180 Rio de Janeiro, RJ (Brazil)

    2015-11-30

    Highlights: • Graphene was prepared by CVD using copper foils as substrates. • Monolayer, bilayer and multilayer graphene were transferred to PU. • Samples were characterized by Raman and optical spectroscopies. • PU/monolayer graphene has transmittance around 80% in visible range. - Abstract: We have proposed the direct transfer of large-area graphene films grown by chemical vapor deposition to polymeric substrate by evaporating of solvents of polyurethane/tetrahydrofurane solution. The graphene films on polyurethane substrates were characterized by Raman spectroscopy, optical and atomic force microscopies and UV–vis spectroscopy measurements. The Raman spectra revealed that it is possible to transfer in a controlled manner monolayer, bilayer and multilayer graphene films over polyurethane substrate.

  20. Direct transfer of graphene films for polyurethane substrate

    International Nuclear Information System (INIS)

    Vilani, C.; Romani, E.C.; Larrudé, D.G.; Barbosa, Gelza M.; Freire, F.L.

    2015-01-01

    Highlights: • Graphene was prepared by CVD using copper foils as substrates. • Monolayer, bilayer and multilayer graphene were transferred to PU. • Samples were characterized by Raman and optical spectroscopies. • PU/monolayer graphene has transmittance around 80% in visible range. - Abstract: We have proposed the direct transfer of large-area graphene films grown by chemical vapor deposition to polymeric substrate by evaporating of solvents of polyurethane/tetrahydrofurane solution. The graphene films on polyurethane substrates were characterized by Raman spectroscopy, optical and atomic force microscopies and UV–vis spectroscopy measurements. The Raman spectra revealed that it is possible to transfer in a controlled manner monolayer, bilayer and multilayer graphene films over polyurethane substrate.

  1. TRIBOLOGY OF BIO-INSPIRED NANOWRINKLED FILMS ON ULTRASOFT SUBSTRATES

    Directory of Open Access Journals (Sweden)

    Juergen M. Lackner

    2013-03-01

    Full Text Available Biomimetic design of new materials uses nature as antetype, learning from billions of years of evolution. This work emphasizes the mechanical and tribological properties of skin, combining both hardness and wear resistance of its surface (the stratum corneum with high elasticity of the bulk (epidermis, dermis, hypodermis. The key for combination of such opposite properties is wrinkling, being consequence of intrinsic stresses in the bulk (soft tissue: Tribological contact to counterparts below the stress threshold for tissue trauma occurs on the thick hard stratum corneum layer pads, while tensile loads smooth out wrinkles in between these pads. Similar mechanism offers high tribological resistance to hard films on soft, flexible polymers, which is shown for diamond-like carbon (DLC and titanium nitride thin films on ultrasoft polyurethane and harder polycarbonate substrates. The choice of these two compared substrate materials will show that ultra-soft substrate materials are decisive for the distinct tribological material. Hierarchical wrinkled structures of films on these substrates are due to high intrinsic compressive stress, which evolves during high energetic film growth. Incremental relaxation of these stresses occurs by compound deformation of film and elastic substrate surface, appearing in hierarchical nano-wrinkles. Nano-wrinkled topographies enable high elastic deformability of thin hard films, while overstressing results in zigzag film fracture along larger hierarchical wrinkle structures. Tribologically, these fracture mechanisms are highly important for ploughing and sliding of sharp and flat counterparts on hard-coated ultra-soft substrates like polyurethane. Concentration of polyurethane deformation under the applied normal loads occurs below these zigzag cracks. Unloading closes these cracks again. Even cyclic testing do not lead to film delamination and retain low friction behavior, if the adhesion to the substrate is high

  2. Tribology of bio-inspired nanowrinkled films on ultrasoft substrates.

    Science.gov (United States)

    Lackner, Juergen M; Waldhauser, Wolfgang; Major, Lukasz; Teichert, Christian; Hartmann, Paul

    2013-01-01

    Biomimetic design of new materials uses nature as antetype, learning from billions of years of evolution. This work emphasizes the mechanical and tribological properties of skin, combining both hardness and wear resistance of its surface (the stratum corneum) with high elasticity of the bulk (epidermis, dermis, hypodermis). The key for combination of such opposite properties is wrinkling, being consequence of intrinsic stresses in the bulk (soft tissue): Tribological contact to counterparts below the stress threshold for tissue trauma occurs on the thick hard stratum corneum layer pads, while tensile loads smooth out wrinkles in between these pads. Similar mechanism offers high tribological resistance to hard films on soft, flexible polymers, which is shown for diamond-like carbon (DLC) and titanium nitride thin films on ultrasoft polyurethane and harder polycarbonate substrates. The choice of these two compared substrate materials will show that ultra-soft substrate materials are decisive for the distinct tribological material. Hierarchical wrinkled structures of films on these substrates are due to high intrinsic compressive stress, which evolves during high energetic film growth. Incremental relaxation of these stresses occurs by compound deformation of film and elastic substrate surface, appearing in hierarchical nano-wrinkles. Nano-wrinkled topographies enable high elastic deformability of thin hard films, while overstressing results in zigzag film fracture along larger hierarchical wrinkle structures. Tribologically, these fracture mechanisms are highly important for ploughing and sliding of sharp and flat counterparts on hard-coated ultra-soft substrates like polyurethane. Concentration of polyurethane deformation under the applied normal loads occurs below these zigzag cracks. Unloading closes these cracks again. Even cyclic testing do not lead to film delamination and retain low friction behavior, if the adhesion to the substrate is high and the initial

  3. Thin film with oriented cracks on a flexible substrate

    Science.gov (United States)

    Feng, Bao; McGilvray, Andrew; Shi, Bo

    2010-07-27

    A thermoelectric film is disclosed. The thermoelectric film includes a substrate that is substantially electrically non-conductive and flexible and a thermoelectric material that is deposited on at least one surface of the substrate. The thermoelectric film also includes multiple cracks oriented in a predetermined direction.

  4. Stress in film/substrate system due to diffusion and thermal misfit effects

    International Nuclear Information System (INIS)

    Shao Shanshan; Xuan Fuzhen; Wang Zhengdong; Tu Shantung

    2009-01-01

    The stress in film/substrate systems has been analysed taking into consideration the coupling effects of diffusion and thermal misfit within the framework of Fick's second law. The solution of diffusion-induced stress in a film/substrate system involving the thermal misfit stress feedback is developed. The effects of modulus ratios, diffusivity ratios, thickness ratios of the substrate and the film and the partial molar volume of the diffusing component on the stress distribution in the film/substrate system are then discussed with the help of the finite difference method. Results indicate that the stresses in the film/substrate system vary with diffusion time. Diffusion enhances the magnitudes of film stress when the thermal misfit stress is compressive in the film. Furthermore, the absolute values of stress in the film increase with the increasing modulus ratios of the substrate and film, while they reduce with the increasing partial molar volume of the diffusing component and the diffusivity ratio of the substrate and the film.

  5. Microwave effective surface impedance of structures including a high-Tc superconducting film

    International Nuclear Information System (INIS)

    Hartemann, P.

    1992-01-01

    The microwave effective surface impedances of different stacks made of high-temperature superconducting films, dielectric materials and bulk normal metals were computed. The calculations were based on the two-fluid model of superconductors and the conventional transmission line theory. These effective impedances are compared to the calculated intrinsic surface impedances of the stacked superconducting films. The considered superconducting material has been the oxide YBa 2 Cu 3 O 7 epitaxially grown on crystalline substrates (MgO, LaAlO 3 , SrTiO 3 ), the film thickness ranging from a few nm to 1μm. Discrepancies between the effective surface resistances or reactances and the corresponding intrinsic values were determined at 10 GHz for non resonant or resonant structures. At resonance the surface resistance discrepancy exhibits a sharp peak which reaches 10 4 or more in relative value according to the geometry and the used materials. Obviously the effective surface reactance shows also huge variations about the resonance and may be negative. Moreover geometries allowing to obtain an effective resistance smaller than the film intrinsic value have been found. The effects of the resonance phenomenon on the electromagnetic wave reflectivity and reflection phase shift are investigated. Therefore the reported theoretical results demonstrate that the effective surface impedance of YBCO films with a thickness smaller than 500 nm can be very different from the intrinsic film impedance according to the structures. (Author). 3 refs., 10 figs., 2 tabs

  6. Ferromagnetic film on a superconducting substrate

    International Nuclear Information System (INIS)

    Bulaevskii, L. N.; Chudnovsky, E. M.

    2001-01-01

    We study the equilibrium domain structure and magnetic flux around a ferromagnetic film with perpendicular magnetization M 0 on a superconducting (SC) substrate. At 4πM 0 c1 the SC is in the Meissner state and the equilibrium domain width in the film, l, scales as (l/4πλ L )=(l N /4πλ L ) 2/3 with the domain width on a normal (nonsuperconducting) substrate, l N /4πλ L >>1; λ L being the London penetration length

  7. Filmes finos de SrBi2Ta2O9 processados em forno microondas SrBi2Ta2O9 thin films processed in microwave oven

    Directory of Open Access Journals (Sweden)

    J. S. Vasconcelos

    2003-03-01

    Full Text Available Filmes finos de SrBi2Ta2O9 foram depositados em substratos de Pt/Ti/SiO2/Si e, pela primeira vez, sinterizados em forno microondas doméstico. Os padrões de difração de raios X mostraram que os filmes são policristalinos. O processamento por microondas permite utilizar baixa temperatura na síntese e obter filmes com boas propriedades elétricas. Ensaios de microscopia eletrônica de varredura (MEV e de Força Atômica (MFA revelam boa aderência entre filme e substrato, com microestrutura de superfície apresentando grãos finos e esféricos e rugosidade de 4,7 nm. A constante dielétrica e o fator de dissipação, para freqüência de 100 KHz, à temperatura ambiente, foram de 77 e 0,04, respectivamente. A polarização remanescente (2Pr e o campo coercitivo (Ec foram 1,04 miC/cm² e 33 kV/cm. O comportamento da densidade de corrente de fuga revela três mecanismos de condução: linear, ôhmico e outro mecanismo que pode ser atribuído à corrente de Schottky. Dos padrões de DRX, análises das imagens por MEV e topografia de superfície por MFA observa-se que 10 min de tratamento térmico a 550 ºC, em forno microondas, é tempo suficiente para se obter a cristalização do filme.SrBi2Ta2O9 thin films were deposited on Pt/Ti/SiO2/Si substrates and, for the first time, sintered in a domestic microwave oven. The X-ray diffraction patterns showed that the films are polycrystalline. The microwave processing allows to use a low temperature for the synthesis, obtaining films with good electrical properties. Scanning Electron Microscopy (SEM and Atomic Force Microscopy (AFM results reveal good adherence between film and substrate and a surface microstructure presenting thin and spherical grains and roughness of 4.7 nm. The dielectric constant and the dissipation factor, for a frequency of 100 KHz at room temperature, were 77 and 0.04, respectively. The remaining polarization (2Pr and the coercive field (Ec were 1.04 C/cm² and 33 k

  8. Microwave properties of HTS films

    International Nuclear Information System (INIS)

    Cooke, D.W.; Arendt, P.M.; Grey, E.R.; Muenchausen, R.E.; Bennett, B.L.; Foltyn, S.R.; Estler, R.C.; Wu, X.D.; Reeves, G.A.; Elliott, N.E.; Brown, D.R.; Portis, A.M.; Taber, R.C.; Mogrocampero, A.

    1990-01-01

    High-frequency applications of high- temperature superconductors generally fall into two categories: 1) devices that require low values (relative to Cu) of surface resistance R S in ambient surface magnetic fields H rf ; and 2) devices that require low R S in modest fields (H rf ∼ 250 Oe). Moreover, many applications can be realized with small- surface-area films (∼ 1 cm 2 ) whereas others require larger areas - radiofrequency (rf) cavities, for example. Regardless of the application, the potential of HTS films is predicted on satisfying one or both of the above-stated requirements. The authors have measured the surface resistance of small-area (1 cm 2 ) and large-area (6.5 cm 2 ) YBa 2 Cu 3 O 7 (YBCO) films that have been laser ablated onto LaA ell O 3 substrates, large-area (5.1 cm 2 YBCO films that have been e-beam deposited onto LaA ell O 3 , and large-area (11.4 cm 2 ) T ell-based films that have been magnetron sputtered onto metallic substrates. The best R S values are obtained from the 1-cm 2 laser-ablated films; they are 40 μΩ and 340 μΩ at 4 K And 77 K, respectively (ω/2π = 10 GHz). Comparable values for Cu are 6 and 13 mΩ, respectively. Large-area T ell-based films yield typical R S values of 4 mΩ and 14 mΩ at 4 K and 77 K, respectively (ω/2π = 18 GHz). The dependence of R S on H rf for these films indicates that surface fields as large as 55 Oe can be achieved with R S increasing only by a factor of 10. This field dependence is associated with c-axis texturing

  9. Ferromagnetic film on a superconducting substrate

    Energy Technology Data Exchange (ETDEWEB)

    Bulaevskii, L. N.; Chudnovsky, E. M.

    2001-01-01

    We study the equilibrium domain structure and magnetic flux around a ferromagnetic film with perpendicular magnetization M{sub 0} on a superconducting (SC) substrate. At 4{pi}M{sub 0}film, l, scales as (l/4{pi}{lambda}{sub L})=(l{sub N}/4{pi}{lambda}{sub L}){sup 2/3} with the domain width on a normal (nonsuperconducting) substrate, l{sub N}/4{pi}{lambda}{sub L}>>1; {lambda}{sub L} being the London penetration length.

  10. Cracking in thin films of colloidal particles on elastomeric substrates

    Science.gov (United States)

    Smith, Michael; Sharp, James

    2012-02-01

    The drying of thin colloidal films of particles is a common industrial problem (e.g paint drying, ceramic coatings). An often undesirable side effect is the appearance of cracks. As the liquid in a suspension evaporates, particles are forced into contact both with each other and the substrate, forming a fully wetted film. Under carefully controlled conditions the observed cracks grow orthogonal to the drying front, spaced at regular intervals along it. In this work we investigated the role of the substrate in constraining the film. Atomic force microscopy, was used to image the particle arrangements on the top and bottom surfaces of films, dried on liquid and glass substrates. We present convincing evidence that the interface prevents particle rearrangements at the bottom of the film, leading to a mismatch strain between upper and lower surfaces of the film which appears to drive cracking. We show that when the modulus of the substrate becomes comparable to the stresses measured in the films, the crack spacing is significantly altered. We also show that cracks do not form on liquid substrates. These combined experiments highlight the importance of substrate constraint in the crack formation mechanism.[4pt] [1] M.I. Smith, J.S. Sharp, Langmuir 27, 8009 (2011)

  11. Main principles of passive devices based on graphene and carbon films in microwave-THz frequency range

    Science.gov (United States)

    Kuzhir, Polina P.; Paddubskaya, Alesia G.; Volynets, Nadezhda I.; Batrakov, Konstantin G.; Kaplas, Tommi; Lamberti, Patrizia; Kotsilkova, Rumiana; Lambin, Philippe

    2017-07-01

    The ability of thin conductive films, including graphene, pyrolytic carbon (PyC), graphitic PyC (GrPyC), graphene with graphitic islands (GrI), glassy carbon (GC), and sandwich structures made of all these materials separated by polymer slabs to absorb electromagnetic radiation in microwave-THz frequency range, is discussed. The main physical principles making a basis for high absorption ability of these heterostructures are explained both in the language of electromagnetic theory and using representation of equivalent electrical circuits. The idea of using carbonaceous thin films as the main working elements of passive radiofrequency (RF) devices, such as shields, filters, polarizers, collimators, is proposed theoretically and proved experimentally. The important advantage of PyC, GrI, GrPyC, and GC is that, in contrast to graphene, they either can be easily deposited onto a dielectric substrate or are strong enough to allow their transfer from the catalytic substrate without a shuttle polymer layer. This opens a new avenue toward the development of a scalable protocol for cost-efficient production of ultralight electromagnetic shields that can be transferred to commercial applications. A robust design via finite-element method and design of experiment for RF devices based on carbon/graphene films and sandwiches is also discussed in the context of virtual prototyping.

  12. Quality of YBCO thin films grown on LAO substrates exposed to the film deposition - film removal processes

    Energy Technology Data Exchange (ETDEWEB)

    Blagoev, B; Nurgaliev, T [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Mozhaev, P B [Institute of Physics and Technology, Russian Academy of Sciences, 117218 Moscow (Russian Federation); Sardela, M; Donchev, T [Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, IL 61801 (United States)], E-mail: blago_sb@yahoo.com

    2008-05-01

    The characteristics are investigated of high temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) films grown on LaAlO{sub 3} (LAO) substrates being exposed a different number of times to YBCO film deposition and acid-solution-based cleaning procedures. Possible mechanisms of degradation of the substrate surface quality reflecting on the growing YBCO film parameters are discussed and analyzed.

  13. Thin polymer films on chemically patterned, corrugated substrates

    International Nuclear Information System (INIS)

    Geoghegan, Mark; Wang Chun; Rehse, Nicolaus; Magerle, Robert; Krausch, Georg

    2005-01-01

    We study the effect of a chemical pattern on the wetting and dewetting behaviour of thin polystyrene (PS) films on regularly corrugated silicon substrates. Our results reveal that the film preparation, annealing method, and confinement play a critical role in the final film structure. On evaporating gold on both sides of the facets (such that it covered the crests of the facets, and not the troughs), we observed dewetting, which proceeded to the gold, demonstrating an enthalpic effect contrary to the outcome previously observed when gold was only evaporated on one side of the facet. We also coated the substrate with octadecyltrichlorosilane (OTS); this led to a gold and OTS striped structure. PS films several nanometres thick dewet such substrates, with a preferential direction for dewetting in the direction of the stripes forming droplets of a considerably larger size than the stripes

  14. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  15. Effect of substrate crystallographic orientation of garnet-ferrite film properties

    International Nuclear Information System (INIS)

    Burym, Yu.A.; Dubinko, S.V.; Mitsaj, Yu.N.; Borovitskaya, L.N.; Prokopov, A.P.

    1992-01-01

    Samples of garnet-ferrite films with a composition (YbGdPrBi) 3 (FeAlGa) 5 O 12 grown under identical conditions on variously oriented substrates, have been studied. The substrate orientation was changed in such a way that the vector of the substrate normal was in the [110] plane between the [111] and [112] directions. We have found that the substrate misorientation leads to an inclined position of the easy magnetization axis (EMA) and a reduction of the film growth rate. The change of the film physical properties (Faraday rotation, Curie temperature, magnetization) indicates the film composition variation with the substrate orientation change. The temperature dependence of the EMA slope angle in the studied samples is determined by the magnetoelastic contribution to the anisotropy constants. (author)

  16. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  17. Microwave plasma CVD of oxide films relating to high Tc Bi-Sr-Ca-Cu-O superconductor

    International Nuclear Information System (INIS)

    Hashimoto, T.; Kosaka, T.; Yoshida, Y.; Yoshimoto, M.; Koinuma, H.

    1989-01-01

    Microwave plasma CVD was applied to the synthesis of Bi, Sr, Ca, and Cu oxide films at relatively low temperatures. Gas source materials used were Bi(C 6 H 5 ) 3 , Sr(PPM) 2 , Ca(PPM) 2 , and Cu(HFA) 2 , where PPM and HFA represent C 2 F 5 COCHCOC(CH 3 ) 3 and CF 3 COCHCOCF 3 , respectively. Films were deposited on MgO (100) substrate at temperatures between 200 C and 400 C under an atmosphere of 1000mTorr Ar-O 2 (50/100) mixture which was partially excited by plasma. From Bi(C 6 H 5 ) 3 , Bi 2 O 3 was formed at 200 C without containing carbon above the detection level by XPS analysis. From Cu(HFA) 2 , CuO was prepared at 400 C by increasing oxygen partial pressure to 0.1Torr. (At lower oxygen partial pressure, CuF 2 or amorphous films were deposited.) From Sr(PPM) 2 and Ca(PPM) 2 , SrF 2 and CaF 2 were obtained at 400 C. The attempt to fabricate superconducting films is also reported

  18. Quality improvement of organic thin films deposited on vibrating substrates

    Energy Technology Data Exchange (ETDEWEB)

    Paredes, Y.A.; Caldas, P.G.; Prioli, R.; Cremona, M., E-mail: cremona@fis.puc-rio.br

    2011-12-30

    Most of the Organic Light-Emitting Diodes (OLEDs) have a multilayered structure composed of functional organic layers sandwiched between two electrodes. Thin films of small molecules are generally deposited by thermal evaporation onto glass or other rigid or flexible substrates. The interface state between two organic layers in OLED device depends on the surface morphology of the layers and affects deeply the OLED performance. The morphology of organic thin films depends mostly on substrate temperature and deposition rate. Generally, the control of the substrate temperature allows improving the quality of the deposited films. For organic compounds substrate temperature cannot be increased too much due to their poor thermal stability. However, studies in inorganic thin films indicate that it is possible to modify the morphology of a film by using substrate vibration without increasing the substrate temperature. In this work, the effect of the resonance vibration of glass and silicon substrates during thermal deposition in high vacuum environment of tris(8-quinolinolate)aluminum(III) (Alq{sub 3}) and N,N Prime -Bis(naphthalene-2-yl)-N,N Prime -bis(phenyl)-benzidine ({beta}-NPB) organic thin films with different deposition rates was investigated. The vibration used was in the range of hundreds of Hz and the substrates were kept at room temperature during the process. The nucleation and subsequent growth of the organic films on the substrates have been studied by atomic force microscopy technique. For Alq{sub 3} and {beta}-NPB films grown with 0.1 nm/s as deposition rate and using a frequency of 100 Hz with oscillation amplitude of some micrometers, the results indicate a reduction of cluster density and a roughness decreasing. Moreover, OLEDs fabricated with organic films deposited under these conditions improved their power efficiency, driven at 4 mA/cm{sup 2}, passing from 0.11 lm/W to 0.24 lm/W with an increase in their luminance of about 352 cd/m{sup 2

  19. Substrate-HTcS thin film interaction studies by (S)TEM

    NARCIS (Netherlands)

    Ramaekers, P.P.J.; Klepper, D.; Kitazawa, K.; Ishiguro, T.

    1989-01-01

    This paper concerns with compatibility aspects beween HTcS thin film either their substrates. The influence of substrate-thin film interaction and thin film microstructure on the superconducting properties is discussed. In this respect, data based on (S)TEM observations are presented. It is

  20. Diamond film growth with modification properties of adhesion between substrate and diamond film

    Directory of Open Access Journals (Sweden)

    Setasuwon P.

    2004-03-01

    Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

  1. Microwave flash sintering of inkjet-printed silver tracks on polymer substrates

    NARCIS (Netherlands)

    Perelaer, J.; Klokkenburg, M.; Hendriks, C.E.; Schubert, U.S.

    2009-01-01

    Microwave flash sintering of inkjet printed colloidal silver dispersions on thin polymer substrates was studied as a function of the antenna area and initial resistance. The presence of conductive antennae promotes nanoparticle sintering in predried ink lines. For dried nanoparticle inks connected

  2. Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

    Science.gov (United States)

    Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

    2018-05-01

    Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

  3. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  4. Method for producing textured substrates for thin-film photovoltaic cells

    Science.gov (United States)

    Lauf, Robert J.

    1994-01-01

    The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

  5. Superconductivity applications for infrared and microwave devices; Proceedings of the Meeting, Orlando, FL, Apr. 19, 20, 1990

    Science.gov (United States)

    Bhasin, Kul B.; Heinen, Vernon O.

    1990-10-01

    Various papers on superconductivity applications for IR and microwave devices are presented. The individual topics addressed include: pulsed laser deposition of Tl-Ca-Ba-Cu-O films, patterning of high-Tc superconducting thin films on Si substrates, IR spectra and the energy gap in thin film YBa2Cu3O(7-delta), high-temperature superconducting thin film microwave circuits, novel filter implementation utilizing HTS materials, high-temperature superconductor antenna investigations, high-Tc superconducting IR detectors, high-Tc superconducting IR detectors from Y-Ba-Cu-O thin films, Y-Ba-Cu0-O thin films as high-speed IR detectors, fabrication of a high-Tc superconducting bolometer, transition-edge microbolometer, photoresponse of YBa2Cu3O(7-delta) granular and epitaxial superconducting thin films, fast IR response of YBCO thin films, kinetic inductance effects in high-Tc microstrip circuits at microwave frequencies.

  6. Fracture Analysis of MWCNT/Epoxy Nanocomposite Film Deposited on Aluminum Substrate.

    Science.gov (United States)

    Her, Shiuh-Chuan; Chien, Pao-Chu

    2017-04-13

    Multi-walled carbon nanotube (MWCNT) reinforced epoxy films were deposited on an aluminum substrate by a hot-pressing process. Three-point bending tests were performed to determine the Young's modulus of MWCNT reinforced nanocomposite films. Compared to the neat epoxy film, nanocomposite film with 1 wt % of MWCNT exhibits an increase of 21% in the Young's modulus. Four-point-bending tests were conducted to investigate the fracture toughness of the MWCNT/epoxy nanocomposite film deposited on an aluminum substrate with interfacial cracks. Based on the Euler-Bernoulli beam theory, the strain energy in a film/substrate composite beam is derived. The difference of strain energy before and after the propagation of the interfacial crack are calculated, leading to the determination of the strain energy release rate. Experimental test results show that the fracture toughness of the nanocomposite film deposited on the aluminum substrate increases with the increase in the MWCNT content.

  7. Defect studies of ZnO films prepared by pulsed laser deposition on various substrates

    International Nuclear Information System (INIS)

    Melikhova, O; Čížek, J; Procházka, I; Kužel, R; Novotný, M; Bulír, J; Lancok, J; Anwand, W; Brauer, G; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P

    2013-01-01

    ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20–100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate.

  8. Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

    Directory of Open Access Journals (Sweden)

    Evgeny E. Ashkinazi

    2017-06-01

    Full Text Available Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC high-pressure high temperature (HPHT diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4% of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD films are produced on other planes. This observation is important for the choice of appropriate growth parameters, in particular, for the production of bi-layer or multilayer NCD-on-microcrystalline diamond (MCD superhard coatings on tools when the deposition of continuous conformal NCD film on all facet is required. The development of the film morphology with growth time is examined with SEM. The structure of hillocks, with or without polycrystalline aggregates, that appear on {100} face is analyzed, and the stress field (up to 0.4 GPa within the hillocks is evaluated based on high-resolution mapping of photoluminescence spectra of nitrogen-vacancy NV optical centers in the film.

  9. Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

    Science.gov (United States)

    Jia, Endong; Zhou, Chunlan; Wang, Wenjing

    2015-01-01

    Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

  10. Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Muslim, Noormariah, E-mail: 14h8702@ubd.edu.bn [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Soon, Ying Woan [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Physical and Geological Sciences, Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Lim, Chee Ming; Voo, Nyuk Yoong [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam)

    2016-08-01

    Pure nickel (Ni) thin films of thicknesses of 100 nm were deposited on glass substrates by radio frequency magnetron sputtering at a power of 100 W and at various substrate temperatures i.e., room temperature, 100, 200, and 300 °C. The crystalline structure, surface topography, surface morphology, electrical resistivity, and optical properties of the deposited films were studied. The properties of the Ni films could be controlled by altering the substrate temperature. Specifically, the films featured a face-centered cubic crystalline structure with predominant (111) crystallite orientation at all the substrate temperatures employed, as observed from the X-ray diffraction analysis. Films deposited at substrate temperatures greater than 200 °C additionally displayed crystalline (200) and (220) diffraction peaks. The surface morphology analysis revealed that the grain size of the Ni thin films increased with increasing substrate temperatures employed. This increase was accompanied with a decrease in the resistivity of the Ni films. The surface roughness of the films increased with increasing substrate temperatures employed, as observed from the atomic force microscopy analysis. - Highlights: • RF magnetron sputtering is a good alternative method to deposit Ni films. • Properties of Ni films could be controlled simply by tuning substrate temperatures. • Crystallite size and surface roughness increased with substrate temperatures. • Electrical resistivity reduced with increasing substrate temperatures. • Optical properties also changed with substrate temperatures.

  11. Nucleation of microwave plasma CVD diamond on molybdenum (Mo) substrate

    International Nuclear Information System (INIS)

    Inderjeet, K.; Ramesh, S.

    2000-01-01

    Molybdenum is a metal, which is gaining increasing significance in industrial applications. The main use of Mo is as all alloying element added in small amounts to steel, irons and non- ferrous alloys in order to enhance the strength, toughness and wear resistance. Mo is also vastly being employed in the automotive and aircraft industries, mainly due to its low coefficient of friction. Diamond, on be other hand, is a unique material for innumerable applications because of its usual combination of physical and chemical properties. Several potential applications can be anticipated for diamond in many sectors including electronics, optics, as protective corrosion resistant coatings, cutting tools, etc. With the enhancement in science and technology, diamond microcrystals and thin films are now being produced from the vapour phase by a variety of chemical vapour deposition (CVD) techniques; such as microwave plasma CVD. With such technology being made available, it is envisage that diamond-coated molybdenum would further enhance the performance and to open up new avenue for Mo in various industries. Therefore, it is the aim of the present work to study the nucleation and growth of diamond particles on Mo surface by employing microwave plasma CVD (MAPCVD). In the present work, diamond deposition was carried out in several stages by varying the deposition distance. The nucleation and growth rate were studied using scanning electron microscopy (SEM). In addition, the existence of diamond was verified by X-ray diffraction (XRD) analysis. It has been found that the nucleation and growth rate of diamond particles were influenced by the deposition height between the substrate and plasma. Under the optimum condition, well defined diamond crystallites distributed homogeneously throughout the surface, could be obtained. Some of the important parameters controlling the deposition and growth of diamond particles on Mo surface are discussed. (author)

  12. Microwave assisted click chemistry on a conductive polymer film

    DEFF Research Database (Denmark)

    Daugaard, Anders Egede; Hansen, Thomas S.; Larsen, Niels Bent

    2011-01-01

    Microwave (MW) irradiation has been used to accelerate the functionalization of an azide functional poly(3,4-ethylenedioxythiophene) film by click chemistry. The absorption of MW energy by the conductive polymer has been exploited for localized activation of the reaction on the polymer surface...

  13. Analyzing the LiF thin films deposited at different substrate temperatures using multifractal technique

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, R.P. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); Dwivedi, S., E-mail: suneetdwivedi@gmail.com [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Mittal, A.K. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Kumar, Manvendra [Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002 (India); Pandey, A.C. [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002 (India)

    2014-07-01

    The Atomic Force Microscopy technique is used to characterize the surface morphology of LiF thin films deposited at substrate temperatures 77 K, 300 K and 500 K, respectively. It is found that the surface roughness of thin film increases with substrate temperature. The multifractal nature of the LiF thin film at each substrate temperature is investigated using the backward two-dimensional multifractal detrended moving average analysis. The strength of multifractility and the non-uniformity of the height probabilities of the thin films increase as the substrate temperature increases. Both the width of the multifractal spectrum and the difference of fractal dimensions of the thin films increase sharply as the temperature reaches 500 K, indicating that the multifractility of the thin films becomes more pronounced at the higher substrate temperatures with greater cluster size. - Highlights: • Analyzing LiF thin films using multifractal detrended moving average technique • Surface roughness of LiF thin film increases with substrate temperature. • LiF thin films at each substrate temperature exhibit multifractality. • Multifractility becomes more pronounced at the higher substrate temperatures.

  14. Influence of substrate and film thickness on polymer LIPSS formation

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A. [Instituto de Estructura de la Materia (IEM-CSIC), Serrano 121, Madrid 28006 (Spain); Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano (IQFR-CSIC), Serrano 119, Madrid 28006 (Spain)

    2017-02-01

    Highlights: • The estimation of temperature upon pulse accumulation shows that a small positive offset is caused by each individual pulse. • Number of pulses needed for LIPSS formation in PS thin films depends on polymer thickness. • Thermal conductivity and diffusivity of supporting substrate influence the onset for LIPSS formation and their quality. • Quality of LIPSS is affected by the substrate optical properties. - Abstract: Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200–380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

  15. Influence of negative substrate bias voltage on the impurity concentrations in Zr films

    International Nuclear Information System (INIS)

    Lim, J.-W.; Bae, J.W.; Mimura, K.; Isshiki, M.

    2006-01-01

    Zr films were deposited on Si(1 0 0) substrates without a substrate bias voltage and with substrate bias voltages of -50 V and -100 V using a non-mass separated ion beam deposition system. Secondary ion mass spectrometry and glow discharge mass spectrometry were used to determine the impurity concentrations in a Zr target and Zr films. It was found that the total amount of impurities in the Zr film deposited at the substrate bias voltage of -50 V was much lower than that in the Zr film deposited without the substrate bias voltage. It means that applying a negative bias voltage to the substrate can suppress the increase in impurities of Zr films. Furthermore, it was confirmed that dominant impurity elements such as C, N and O have a considerable effect on the purity of Zr films and these impurities can be remarkably reduced by applying the negative substrate bias voltage

  16. Microwave plasma chemical synthesis of nanocrystalline carbon film structures and study their properties

    Science.gov (United States)

    Bushuev, N.; Yafarov, R.; Timoshenkov, V.; Orlov, S.; Starykh, D.

    2015-08-01

    The self-organization effect of diamond nanocrystals in polymer-graphite and carbon films is detected. The carbon materials deposition was carried from ethanol vapors out at low pressure using a highly non-equilibrium microwave plasma. Deposition processes of carbon film structures (diamond, graphite, graphene) is defined. Deposition processes of nanocrystalline structures containing diamond and graphite phases in different volume ratios is identified. The solid film was obtained under different conditions of microwave plasma chemical synthesis. We investigated the electrical properties of the nanocrystalline carbon films and identified it's from various factors. Influence of diamond-graphite film deposition mode in non-equilibrium microwave plasma at low pressure on emission characteristics was established. This effect is justified using the cluster model of the structure of amorphous carbon. It was shown that the reduction of bound hydrogen in carbon structures leads to a decrease in the threshold electric field of emission from 20-30 V/m to 5 V/m. Reducing the operating voltage field emission can improve mechanical stability of the synthesized film diamond-graphite emitters. Current density emission at least 20 A/cm2 was obtained. Nanocrystalline carbon film materials can be used to create a variety of functional elements in micro- and nanoelectronics and photonics such as cold electron source for emission in vacuum devices, photonic devices, cathodoluminescent flat display, highly efficient white light sources. The obtained graphene carbon net structure (with a net size about 6 μm) may be used for the manufacture of large-area transparent electrode for solar cells and cathodoluminescent light sources

  17. Diffusion and adhesion properties of Cu films on polyimide substrates

    International Nuclear Information System (INIS)

    Liang, T.X.; Liu, Y.Q.; Fu, Z.Q.; Luo, T.Y.; Zhang, K.Y.

    2005-01-01

    Copper thin films were prepared on polyimide (PI) substrates by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Titanium nitride (TiN) diffusion barrier layers were deposited between the copper films and the PI substrates by PVD. Auger electron spectroscopy compositional depth profile showed that TiN barrier layer was very effective in preventing copper diffusion into PI substrate even after the Cu/TiN/PI samples were annealed at 300 deg. C for 5 h. For the as-deposited CVD-Cu/PI, CVD-Cu/TiN/PI, and as-deposited PVD-Cu/PI samples, the residual stress in Cu films was very small. Relatively larger residual stress existed in Cu films for PVD-Cu/TiN/PI samples. For PVD-Cu/TiN/PI samples, annealing can increase the peeling strength to the level observed without a diffusion barrier. The adhesion improvement of Cu films by annealing treatment can be attributed to lowering of the residual tensile stress in Cu films

  18. Precise microwave characterization of MgO substrates for HTS circuits with superconducting post dielectric resonator

    International Nuclear Information System (INIS)

    Mazierska, Janina; Ledenyov, Dimitri; Jacob, Mohan V; Krupka, Jerzy

    2005-01-01

    Accurate data of complex permittivity of dielectric substrates are needed for efficient design of HTS microwave planar circuits. We have tested MgO substrates from three different manufacturing batches using a dielectric resonator with superconducting parts recently developed for precise microwave characterization of laminar dielectrics at cryogenic temperatures. The measurement fixture has been fabricated using a SrLaAlO 3 post dielectric resonator with DyBa 2 Cu 3 O 7 end plates and silver-plated copper sidewalls to achieve the resolution of loss tangent measurements of 2 x 10 -6 . The tested MgO substrates exhibited the average relative permittivity of 9.63 and tanδ from 3.7 x 10 -7 to 2 x 10 -5 at frequency of 10.5 GHz in the temperature range from 14 to 80 K

  19. Mastering the biaxial stress state in nanometric thin films on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Faurie, D., E-mail: faurie@univ-paris13.fr [LSPM-CNRS, UPR3407, Université Paris 13, Villetaneuse (France); Renault, P.-O.; Le Bourhis, E. [Institut Pprime UPR3346, CNRS – Université de Poitiers, Futuroscope (France); Geandier, G. [Institut Jean Lamour, CNRS UMR7198, Université de Lorraine, Nancy Cedex (France); Goudeau, P. [Institut Pprime UPR3346, CNRS – Université de Poitiers, Futuroscope (France); Thiaudière, D. [SOLEIL Synchrotron, Saint-Aubin, Gif-Sur-Yvette (France)

    2014-07-01

    Biaxial stress state of thin films deposited on flexible substrate can be mastered thanks to a new biaxial device. This tensile machine allows applying in-plane loads F{sub x} and F{sub y} in the two principal directions x and y of a cruciform-shaped polymer substrate. The transmission of the deformation at film/substrate interface allows controlling the stress and strain field in the thin films. We show in this paper a few illustrations dealing with strain measurements in polycrystalline thin films deposited on flexible substrate. The potentialities of the biaxial device located at Soleil synchrotron are also discussed.

  20. High-quality substrate for fluorescence enhancement using agarose-coated silica opal film.

    Science.gov (United States)

    Xu, Ming; Li, Juan; Sun, Liguo; Zhao, Yuanjin; Xie, Zhuoying; Lv, Linli; Zhao, Xiangwei; Xiao, Pengfeng; Hu, Jing; Lv, Mei; Gu, Zhongze

    2010-08-01

    To improve the sensitivity of fluorescence detection in biochip, a new kind of substrates was developed by agarose coating on silica opal film. In this study, silica opal film was fabricated on glass substrate using the vertical deposition technique. It can provide stronger fluorescence signals and thus improve the detection sensitivity. After coating with agarose, the hybrid film could provide a 3D support for immobilizing sample. Comparing with agarose-coated glass substrate, the agarose-coated opal substrates could selectively enhance particular fluorescence signals with high sensitivity when the stop band of the silica opal film in the agarose-coated opal substrate overlapped the fluorescence emission wavelength. A DNA hybridization experiment demonstrated that fluorescence intensity of special type of agarose-coated opal substrates was about four times that of agarose-coated glass substrate. These results indicate that the optimized agarose-coated opal substrate can be used for improving the sensitivity of fluorescence detection with high quality and selectivity.

  1. Role of substrate morphology in ion induced dewetting of thin solid films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto, Luca, E-mail: luca.repetto@unige.it [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Lo Savio, Roberto [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, Barbara [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, Giuseppe; Valbusa, Ugo [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2014-10-01

    Highlights: • We have created by ion bombardment silicon substrates with different topographies. • The substrates have been characterized by ellipsometry, AFM, SEM and EDX. • The substrates have been used for experiments of ion induced Cr films. • We show that different substrate topographies can induce different dewetted patterns. • Substrate topography can favor spinodal dewetting against heterogeneous nucleations. - Abstract: We investigate the role of the substrate morphology in the dewetting of ultrathin chromium films irradiated with 30 keV Ga ions. Silicon surfaces with different roughness were used as substrates for the films. The results of the irradiation experiments and of related simulations indicate that the chromium films can undergo a dewetting-like process through the two standard channels that show up for liquids, namely the spinodal channel, and the dewetting by heterogeneous nucleation. The two processes are competitive, and the prevailing one can be predicted and selected according to the characteristics of the substrate.

  2. Role of substrate morphology in ion induced dewetting of thin solid films

    International Nuclear Information System (INIS)

    Repetto, Luca; Lo Savio, Roberto; Šetina Batič, Barbara; Firpo, Giuseppe; Valbusa, Ugo

    2014-01-01

    Highlights: • We have created by ion bombardment silicon substrates with different topographies. • The substrates have been characterized by ellipsometry, AFM, SEM and EDX. • The substrates have been used for experiments of ion induced Cr films. • We show that different substrate topographies can induce different dewetted patterns. • Substrate topography can favor spinodal dewetting against heterogeneous nucleations. - Abstract: We investigate the role of the substrate morphology in the dewetting of ultrathin chromium films irradiated with 30 keV Ga ions. Silicon surfaces with different roughness were used as substrates for the films. The results of the irradiation experiments and of related simulations indicate that the chromium films can undergo a dewetting-like process through the two standard channels that show up for liquids, namely the spinodal channel, and the dewetting by heterogeneous nucleation. The two processes are competitive, and the prevailing one can be predicted and selected according to the characteristics of the substrate

  3. Using Multilayered Substrate Integrated Waveguide to Design Microwave Gain Equalizer

    Directory of Open Access Journals (Sweden)

    Yongfei Wang

    2014-01-01

    Full Text Available This paper presents the design and experiment of a novel microwave gain equalizer based on the substrate integrated waveguide (SIW technique. The proposed equalizer is formed by an SIW loaded by SIW resonators, which has very compact structure and can compensate for gain slope of microwave systems. Equivalent circuit analysis is given about the proposed structure for a better insight into the structure’s response. A Ku-Band equalizer with four SIW resonators is simulated and fabricated with a multilayer printed circuit board process. The measured results show good performance and agreement with the simulated results; an attenuation slope of −4.5 dB over 12.5–13.5 GHz is reached with a size reduction of 76%.

  4. Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

    International Nuclear Information System (INIS)

    Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L.

    2005-01-01

    The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film

  5. In situ fabrication of AgI films on various substrates

    International Nuclear Information System (INIS)

    Zheng, Z.; Liu, A.R.; Wang, S.M.; Huang, B.J.; Ma, X.M.; Zhao, H.X.; Li, D.P.; Zhang, L.Z.

    2008-01-01

    A facile solution-phase chemical route is developed to directly construct silver iodide (AgI) films/crystals on various substrates including silver foil, silicon wafer and glass, etc. The resulting AgI films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The AgI films with different morphologies can be obtained by controlling the reaction parameters. This method is a simple and fast way for in situ deposition of AgI crystals/films on different substrates. These films may be applied in chemical sensing systems and solid-state batteries as solid electrolytes

  6. Thermal plasma fabricated lithium niobate-tantalate films on sapphire substrate

    International Nuclear Information System (INIS)

    Kulinich, S.A.; Yoshida, T.; Yamamoto, H.; Terashima, K.

    2003-01-01

    We report the deposition of LiNb 1-x Ta x O 3 (0≤x≤1) films on (001) sapphire substrates in soft vacuum using a radio frequency thermal plasma. The growth rate, crystallinity, c-axis orientation, and surface roughness were examined as functions of substrate temperature, precursor feed rate, and substrate surface condition. The film Nb/Ta ratio was well controlled by using an appropriate uniform mixture of lithium-niobium and lithium-tantalum alkoxide solutions. The epitaxy and crystallinity of the films were much improved when the film growth rate was raised from 20 to 180-380 nm/min, where the films with the (006) rocking curve full width at half maximum values as low as 0.12 deg. -0.2 deg. could be produced. The film roughness could be reduced by using a liquid precursor with higher metal concentrations, achieving the root-mean-square value on the order of 5 nm. The refractive indices of the films are in good correspondence with their composition and crystallinity

  7. Polarization reversal in BaTiO{sub 3} nanostructures synthesized by microwave-assisted hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Velasco-Davalos, Ivan; Ambriz-Vargas, Fabian [Centre Énergie, Matériaux et Télécommunications, INRS, 1650 Lionel-Boulet, Varennes, Québec J3X1S2 (Canada); Gómez-Yáñez, Carlos [Departamento de Ingeniería en Metalurgia y Materiales, ESIQIE, Instituto Politécnico Nacional, UPALM, Zacatenco, CP 07738 DF, México (Mexico); Thomas, Reji, E-mail: reji.thomas@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650 Lionel-Boulet, Varennes, Québec J3X1S2 (Canada); Ruediger, Andreas, E-mail: ruediger@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650 Lionel-Boulet, Varennes, Québec J3X1S2 (Canada)

    2016-05-15

    Ferroelectric BaTiO{sub 3} nanostructures and thin films were deposited by a microwave assisted hydrothermal process at low temperatures (<250 °C) on metallic Pt/Al{sub 2}O{sub 3}/SiO{sub 2}/Si and Nb:SrTiO{sub 3} (100) substrates. TiO{sub 2} nanoparticles dispersed in the Ba(OH){sub 2} alkaline solution are used as the precursors without any mineralizers. The incorporation of H{sub 2}O{sub 2} into precursor solution served as a strong oxidant and catalyst for the uniform nucleation of BaTiO{sub 3} on the substrate surface. The polycrystalline and epitaxial nature of the films were confirmed by atomic force microscopy and x-ray diffraction studies. We report the ferroelectric behavior of BaTiO{sub 3} films on Nb:SrTiO{sub 3} (100) substrates by piezoresponse force microscopy. - Highlights: • Microwave assisted hydrothermal deposition of highly ordered BaTiO{sub 3} thin films on single crystal substrates. • Fast growth without the needof any mineralizers. • Moderate addition of H{sub 2}O{sub 2} significantly improves the surface coverage. • H{sub 2}O{sub 2} substantially reduces hydrogen incorporation into the film and the associated leakage current. • Out-of-plane polarization reversal demonstrated locally.

  8. Interface thermal resistance of nanostructured FeCoCu film and Si substrate

    Science.gov (United States)

    Nikolaenko, Yuri M.; Medvedev, Yuri V.; Genenko, Yuri A.; Ghafari, Mohammad; Hahn, Horst

    2006-05-01

    Results of measurement of thermal resistance (RFS ) of film substrate interface of 10 nm (Fe1-x Cox )1-y Cuy film on Si substrate with 50 nm SiO2 sublayer are presented. The estimated magnitude is two orders greater then RFS of epitaxial manganite films on StTiO3 substrate with and without sublayer. The significant increase of RFS is explained by granular structure of film with average size of grain about 10 nm. In this case the additional thermal barier in the film-substrate interface is appeared. It provides the change of regime of phonons propagation from ballistic to diffusion one. The principle possibility of variation of RFS in wide range as a task of nanotechnology is discussed.

  9. Effect of Substrates on the Dynamic Properties of Inkjet-Printed Ag Thin Films

    Directory of Open Access Journals (Sweden)

    Deokman Kim

    2018-01-01

    Full Text Available The dynamic properties of inkjet-printed Ag thin films on flexible substrates were measured using flexural wave propagation. The Ag nanoparticle suspension was inkjet-printed on polyimide (PI, silicon wafer, and glass. The effects of flexible substrates on the dynamic properties of the films were investigated. Beam-shaped Ag-printed substrates were fabricated by pico-second laser pulse cutting. The wave approach was presented to analyze the vibrations of the thin film on the substrates. The Young’s modulus and loss factor of the Ag thin films with the substrates were represented by the combined bending stiffness of the bilayer beam. The vibration response of the base-excited cantilever was measured using an accelerometer and laser Doppler vibrometer (LDV. Vibration transfers were analyzed to obtain dynamic characteristics of the Ag-printed bilayer beam. The substrate affects the reduction of the Ag thin film thickness during the sintering process and surface roughness of the film. The proposed method based on the wave approach allows measurement of the dynamic properties regardless of the ratio of the modulus between the thin film and substrate.

  10. Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Jilani, Asim, E-mail: asim.jilane@gmail.com [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Abdel-wahab, M.Sh [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni -Suef University, Beni-Suef (Egypt); Al-ghamdi, Attieh A. [Centre of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Dahlan, Ammar sadik [Department of architecture, faculty of environmental design, King Abdulaziz University, Jeddah (Saudi Arabia); Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt)

    2016-01-15

    The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ{sup (3)} was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

  11. Low-temperature graphene synthesis using microwave plasma CVD

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-01-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 10 5 Ω/sq.

  12. Low-temperature graphene synthesis using microwave plasma CVD

    Science.gov (United States)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-02-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 105 Ω/sq.

  13. Tailoring of the morphology and chemical composition of thin organosilane microwave plasma polymer layers on metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Grundmeier, G.; Thiemann, P.; Carpentier, J.; Shirtcliffe, N.; Stratmann, M

    2004-01-01

    The growth of thin microwave organosilicon plasma polymers on model zinc surfaces was investigated as a function of the film thickness and the oxygen partial pressure during film deposition. The evolution of the topology of the film was studied by atomic force microscopy (AFM). The nano- and micro-roughness was investigated at the inner and the outer surfaces of the plasma polymers. A special etching procedure was developed to reveal the underside of the plasma polymer and thereby its inner surface. Rough films contained voids at the interface, which reduced the polymer/metal contact area. The increase in oxygen partial pressure led to a smoother film growth with a perfect imitation of the substrate topography at the interface. The chemical structure of the films was determined by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectroscopy (ToF-SIMS). ToF-SIMS at the outer and the inner surface of the plasma polymers showed that the density of methylsilyl groups increases in the outer surface layer of the plasma polymer and depends on the oxygen partial pressure. The chemical composition of the films could be altered to pure SiO{sub 2} without changing the morphology by using oxygen-plasma post-treatment. This was proved by means of IRRAS and AFM. Chemistry and topology of the films were correlated with the apparent water contact angle. It was found that a linear relationship exists between the nanoscopic roughness of the plasma polymer and the static contact angle of water. Superposition of a nanoscopic roughness of the metal surface and the nanoscopic roughness of methylsilyl-rich films led to ultra-hydrophobic films with water contact angles up to 160 deg.

  14. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  15. Precise microwave characterization of MgO substrates for HTS circuits with superconducting post dielectric resonator

    Energy Technology Data Exchange (ETDEWEB)

    Mazierska, Janina [Institute of Information Sciences and Technology, Massey University, Palmerston North, P. Bag 11222 (New Zealand); Ledenyov, Dimitri [Electrical and Computer Engineering, James Cook University, Townsville, Q4811 (Australia); Jacob, Mohan V [Electrical and Computer Engineering, James Cook University, Townsville, Q4811 (Australia); Krupka, Jerzy [Instytut Mikroelektroniki i Optoelektroniki Politechniki Warszawskiej, Koszykowa 75, 00-662 Warsaw (Poland)

    2005-01-01

    Accurate data of complex permittivity of dielectric substrates are needed for efficient design of HTS microwave planar circuits. We have tested MgO substrates from three different manufacturing batches using a dielectric resonator with superconducting parts recently developed for precise microwave characterization of laminar dielectrics at cryogenic temperatures. The measurement fixture has been fabricated using a SrLaAlO{sub 3} post dielectric resonator with DyBa{sub 2}Cu{sub 3}O{sub 7} end plates and silver-plated copper sidewalls to achieve the resolution of loss tangent measurements of 2 x 10{sup -6}. The tested MgO substrates exhibited the average relative permittivity of 9.63 and tan{delta} from 3.7 x 10{sup -7} to 2 x 10{sup -5} at frequency of 10.5 GHz in the temperature range from 14 to 80 K.

  16. Highly stressed carbon film coatings on silicon potential applications

    CERN Multimedia

    Sharda, T

    2002-01-01

    The fabrication of highly stressed and strongly adhered nanocrystalline diamond films on Si substrates is presented. A microwave plasma CVD method with controlled and continuous bias current density was used to grow the films. The stress/curvature of the films can be varied and controlled by altering the BCD. Potential applications for these films include particle physics and x-ray optics.

  17. Fabrication of CdS films with superhydrophobicity by the microwave assisted chemical bath deposition.

    Science.gov (United States)

    Liu, Y; Tan, T; Wang, B; Zhai, R; Song, X; Li, E; Wang, H; Yan, H

    2008-04-15

    A simple method of microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate cadmium sulfide (CdS) thin films. The superhydrophobic surface with a water contact angle (CA) of 151 degrees was obtained. Via a scanning electron microscopy (SEM) observation, the film was proved having a porous micro/nano-binary structure which can change the property of the surface and highly enhance the hydrophobicity of the film. A possible mechanism was suggested to describe the growth of the porous structure, in which the microwave heating takes an important role in the formation of two distinct characteristic dimensions of CdS precipitates, the growth of CdS sheets in micro-scale and sphere particles in nano-scale. The superhydrophobic films may provide novel platforms for photovoltaic, sensor, microfluidic and other device applications.

  18. Effects of substrate material on carbon films grown by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Liu, M.; Xu, X.Y.; Man, B.Y.; Kong, D.M.; Xu, S.C.

    2012-01-01

    Highlights: ► We prepared tri-layers by laser molecular beam epitaxy (LMBE) on sapphire substrate. ► We found that the formation of the graphene film has a strong relation to the structure and properties of the substrate. ► The different carbon film formation mechanism of the buffer layers can affect the morphology of the film. - Abstract: The carbon thin films were grown on different substrates with different buffer layers by laser molecular beam epitaxy (LMBE) with a high purity graphite carbon target. A UV pulsed KrF excimer laser with a wavelength of 248 nm was used as laser source. The structure, surface morphology and other properties of the carbon thin films were characterized by Raman spectroscopy, transmission electron microscopy (TEM), selected area electron diffraction (SAED) and atomic force microscopy (AFM). The results show that the properties of the carbon thin films and the formation of the graphene film have a strong relation to the structure and properties of the substrate. The substrate with a hexagonal wurtzite structure which is similar to the hexagonal honeycomb structure of the carbon atoms arranged in the graphene is more beneficial for the formation of the graphene thin film. In our experiment conditions, the carbon films grown on sapphire substrates with different buffer layers have an ordered structure and a smooth surface, and form high quality tri-layer graphene films.

  19. Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Lina [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu, Shuang, E-mail: shuangliu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Falco, Charles M. [University of Arizona, College of Optical Sciences, AZ 85721 (United States)

    2016-10-30

    Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

  20. Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

    International Nuclear Information System (INIS)

    Guo, Lina; Liu, Shuang; Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong; Falco, Charles M.

    2016-01-01

    Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

  1. Electromechanical properties of amorphous In-Zn-Sn-O transparent conducting film deposited at various substrate temperatures on polyimide substrate

    Science.gov (United States)

    Kim, Young Sung; Lee, Eun Kyung; Eun, Kyoungtae; Choa, Sung-Hoon

    2015-09-01

    The electromechanical properties of the amorphous In-Zn-Sn-O (IZTO) film deposited at various substrate temperatures were investigated by bending, stretching, twisting, and cyclic bending fatigue tests. Amorphous IZTO films were grown on a transparent polyimide substrate using a pulsed DC magnetron sputtering system at different substrate temperatures ranging from room temperature to 200 °C. A single oxide alloyed ceramic target (In2O3: 80 wt %, ZnO: 10 wt %, SnO2: 10 wt % composition) was used. The amorphous IZTO film deposited at 150 °C exhibited an optimized electrical resistivity of 5.8 × 10-4 Ω cm, optical transmittance of 87%, and figure of merit of 8.3 × 10-3 Ω-1. The outer bending tests showed that the critical bending radius decreased as substrate temperature increased. On the other hand, in the inner bending tests, the critical bending radius increased with an increase in substrate temperature. The differences in the bendability of IZTO films for the outer and inner bending tests could be attributed to the internal residual stress of the films. The uniaxial stretching tests also showed the effects of the internal stress on the mechanical flexibility of the film. The bending and stretching test results demonstrated that the IZTO film had higher bendability and stretchability than the conventional ITO film. The IZTO film could withstand 10,000 bending cycles at a bending radius of 10 mm. The effect of the surface roughness on the mechanical durability of all IZTO films was very small due to their very smooth surfaces.

  2. Impact of the substrate on the efficiency of thin film thermoelectric technology

    International Nuclear Information System (INIS)

    Alvarez-Quintana, J.

    2015-01-01

    Thermoelectricity is one of the simplest technologies for thermal energy conversion. Moreover, because of their relatively low efficiency, bulk thermoelectric materials are generally used in environments where their solid state nature outweighs their poor efficiency. Nevertheless, low dimensional thermoelectric materials shed a light in order to achieve higher thermoelectric performance than their bulk counterparts via quantum and spatial confinement of energy carriers. The Thermoelectric figure of merit ZT is the basic criterion for estimating the performance of thermoelectric materials. In this work, by way of an extension of the Harman method to thin films onto substrate to evaluate ZT it is shown that the solely presence of a substrate affects significantly the intrinsic value of the ZT independently of the electrical and thermal nature of the substrate. Furthermore, the model unveils that as the thickness ratio between substrate and thin film increases, the parameter ZT sharply tends to zero; this effect opens a serious problem to overcome by the thin film thermoelectric technology, especially at nanoscale. In this sense, challenges in order to engineering planar thermoelectric devices at micro/nanoscale are properly identified. - Highlights: • Extended Harman method to evaluate ZT of thin films onto substrate is presented. • ZT of thermoelectric thin films is strongly affected by substrate's nature. • Thin dielectric substrates are desirable to hold ZT in in-plane configuration. • Film/substrate thickness ratio play important role on the device performance. • Challenges to engineering planar thermoelectric devices are properly identified

  3. The microwave surface impedance of MgB2 thin films

    International Nuclear Information System (INIS)

    Purnell, A J; Zhukov, A A; Nurgaliev, T; Lamura, G; Bugoslavsky, Y; Lockman, Z; MacManus-Driscoll, J L; Zhai, H Y; Christen, H M; Paranthaman, M P; Lowndes, D H; Jo, M H; Blamire, M G; Hao, Ling; Gallop, J C; Cohen, L F

    2003-01-01

    In this paper we present the results of measurements of the microwave surface impedance of a powder sample and two films of MgB 2 . The powder sample has a T c = 39 K and the films have T c = 29 K and 38 K. These samples show different temperature dependences of the field penetration depth. Over a period of six months, the film with T c = 38 K degraded to a T c of 35 K. We compare the results on all samples with data obtained elsewhere and discuss the implications as far as is possible at this stage

  4. High quality Y-type hexaferrite thick films for microwave applications by an economical and environmentally benign crystal growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Bolin; Chen, Yajie, E-mail: y.chen@neu.edu; Gillette, Scott; Su, Zhijuan; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Wolf, Jason; McHenry, Michael E. [Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-02-17

    Thick barium hexaferrite Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (i.e., Zn{sub 2}Y) films having thicknesses of ∼100 μm were epitaxially grown on MgO (111) substrates using an environmentally benign ferrite-salt mixture by vaporizing the salt. X-ray diffraction pole figure analyses showed (00l) crystallographic alignment with little in plane dispersion confirming epitaxial growth. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 2.51 ± 0.1 kG with an out of plane magnetic anisotropy field H{sub A} of 8.9 ± 0.1 kOe. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.6 GHz, was measured to be 62 Oe. These properties demonstrate a rapid, convenient, cost-effective, and nontoxic method of growing high quality thick crystalline ferrite films which could be used widely for microwave device applications.

  5. Smelting of Scandium by Microwave Irradiation

    Directory of Open Access Journals (Sweden)

    Satoshi Fujii

    2017-09-01

    Full Text Available Scandium is being explored as an alloying element for aluminum alloys, which are gaining importance as high-performance lightweight structural alloys in the transportation industry. A few years ago, Sc was also found to be suitable for use in electrical devices. High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectricity. The piezoelectric response of ScAlN suggests that ScAlN thin films formed on a hard substrate would be suitable surface acoustic wave wideband filters for next-generation wireless communication systems. However, it is often difficult to use ScAlN thin films in MEMS devices—including acoustic ones—because of the extremely high price of metallic Sc, given the difficulty associated with smelting it. Here, we propose a novel process for smelting Sc metal by microwave irradiation. Sc metal was able to be obtained successfully from ScF3 through a microwave-irradiation-based carbon reduction reaction. The reaction temperature for this reduction process was approximately 880°C, which is half of that for the conventional smelting process involving reduction with Ca. Thus, the proposed microwave irradiation process has significant potential for use in the smelting of Sc metal.

  6. Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

    Energy Technology Data Exchange (ETDEWEB)

    Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-01-31

    The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

  7. Diamond-like carbon films deposited on three-dimensional shape substrate model by liquid electrochemical technique

    International Nuclear Information System (INIS)

    He, Y.Y.; Zhang, G.F.; Zhao, Y.; Liu, D.D.; Cong, Y.; Buck, V.

    2015-01-01

    Diamond-like carbon (DLC) films were deposited on three-dimensional (3D) shape substrate model by electrolysis of 2-propanol solution at low temperature (60 °C). This 3D shape model was composed of a horizontally aligned stainless steel wafer and vertically aligned stainless steel rods. Morphology and microstructure of the films were analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy, respectively. The results suggested there were only differences in film uniformity and thickness for two kinds of samples. The hydrogenated amorphous carbon films deposited on horizontally aligned substrate were smooth and homogeneous. And the film thickness of DLC films gained on the vertical substrates decreased along vertical direction. It is believed that bubble formation could enhance nucleation on the wetted capillary area. This experiment shows that deposition of DLC films by liquid phase deposition on 3D shape conductive substrates is possible. - Highlights: • DLC film is expected to be deposited on complex surface/shape substrate. • DLC film is deposited on 3D shape substrate by liquid electrochemical method. • Horizontal substrate is covered by smooth and homogeneous DLC films. • Film thickness decreases along vertical direction due to boiling effect

  8. Diamond-like carbon films deposited on three-dimensional shape substrate model by liquid electrochemical technique

    Energy Technology Data Exchange (ETDEWEB)

    He, Y.Y. [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Zhang, G.F. [School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian China (China); Zhao, Y.; Liu, D.D. [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Cong, Y., E-mail: congyan@ciomp.ac.cn [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Buck, V. [Thin Film Technology Group, Faculty of Physics, University Duisburg-Essen and CeNIDE, 47057 Duisburg (Germany)

    2015-09-01

    Diamond-like carbon (DLC) films were deposited on three-dimensional (3D) shape substrate model by electrolysis of 2-propanol solution at low temperature (60 °C). This 3D shape model was composed of a horizontally aligned stainless steel wafer and vertically aligned stainless steel rods. Morphology and microstructure of the films were analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy, respectively. The results suggested there were only differences in film uniformity and thickness for two kinds of samples. The hydrogenated amorphous carbon films deposited on horizontally aligned substrate were smooth and homogeneous. And the film thickness of DLC films gained on the vertical substrates decreased along vertical direction. It is believed that bubble formation could enhance nucleation on the wetted capillary area. This experiment shows that deposition of DLC films by liquid phase deposition on 3D shape conductive substrates is possible. - Highlights: • DLC film is expected to be deposited on complex surface/shape substrate. • DLC film is deposited on 3D shape substrate by liquid electrochemical method. • Horizontal substrate is covered by smooth and homogeneous DLC films. • Film thickness decreases along vertical direction due to boiling effect.

  9. Modification of Bi:YIG film properties by substrate surface ion pre-treatment

    International Nuclear Information System (INIS)

    Shaposhnikov, A.N.; Prokopov, A.R.; Karavainikov, A.V.; Berzhansky, V.N.; Mikhailova, T.V.; Kotov, V.A.; Balabanov, D.E.; Sharay, I.V.; Salyuk, O.Y.; Vasiliev, M.; Golub, V.O.

    2014-01-01

    Highlights: • Effects of substrates ion beam treatment on magnetoptical properties Bi:YIG films. • Substrate surface damage results in sign inversion of the magneto-optical effects. • Atomically smooth films growth takes place on low energy ions treated substrates. • High energy ions treatment results in selective nucleation mechanism of the growth. - Abstract: The effect of a controlled ion beam pre-treatment of (1 1 1)-oriented Gd 3 Ga 5 O 12 substrates on the magneto-optical properties and surface morphology of the ultrathin bismuth-substituted yttrium–iron garnet films with a composition Bi 2.8 Y 0.2 Fe 5 O 12 was studied. It has been shown that the observed sign inversion of magneto-optical effects (Faraday rotation and magnetic circular dichroism) observed in films that were deposited on the GGG substrate pre-treated by 1 keV and 4 keV Ar + ion beams is a result of the substrate surface amorphization caused by the ion bombardment

  10. Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Hara, Yujiro; Suzuki, Kouji

    2000-09-01

    Lead-zirconate-titanate (PZT) thin films were prepared on non-alkaline glass substrates widely used in liquid crystal display (LCD) devices, by plasma-assisted magnetron RF sputtering with an immersed coil. After preparation of the PZT thin film, the glass was available for use in LCD device processing. No mutual diffusion of the elements was recognized between the glass substrate and the bottom electrode. The PZT layer had a dense film structure with rectangular and columnar grains, and only its perovskite phase was crystalline. PZT thin films on a glass substrate had leakage current densities of about 10-8 A/cm2, acceptable hysteresis loop shapes with the remanent polarization (Pr) of 45 μC/cm2 and the coercive field (Ec) of 90 kV/cm. Ferroelectric properties on a glass substrate almost conform with those on a Si-based substrate.

  11. Large microwave tunability of GaAs-based multiferroic heterostructure for applications in monolithic microwave integrated circuits

    International Nuclear Information System (INIS)

    Chen Yajie; Gao Jinsheng; Vittoria, C; Harris, V G; Heiman, D

    2010-01-01

    Microwave magnetoelectric coupling in a ferroelectric/ferromagnetic/semiconductor multiferroic (MF) heterostructure, consisting of a Co 2 MnAl epitaxial film grown on a GaAs substrate bonded to a lead magnesium niobate-lead titanate (PMN-PT) crystal, is reported. Ferromagnetic resonance measurements were carried out at X-band under the application of electric fields. Results indicate a frequency tuning of 125 MHz for electric field strength of 8 kV cm -1 resulting in a magnetoelectric coupling coefficient of 3.4 Oe cm kV -1 . This work explores the potential of electronically controlled MF devices for use in future monolithic microwave integrated circuits.

  12. Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

    Science.gov (United States)

    Ballinger, Jared

    . Surface boriding was implemented using the novel method of microwave plasma CVD with a mixture of hydrogen and diborane gases. On 440C bearings, dual phase boride layers of Fe2B and FeB were formed which supported adhered nanostructured diamond films. Continuity of the films was not seamless with limited regions remaining uncoated potentially corresponding to delamination of the film as evidenced by the presence of tubular structures presumably composed of sp2 bonded carbon. Surface boriding of 316 stainless steel discs was conducted at various powers and pressures to achieve temperatures ranging from 550-800 °C. The substrate boriding temperature was found to substantially influence the resultant interlayer by altering the metal boride(s) present. The lowest temperatures produced an interlayer where CrB was the single detected phase, higher temperatures yielded the presence of only Fe2B, and a combination of the two phases resulted from an intermediate boriding temperature. Compared with the more common, commercialized boriding methods, this a profound result given the problems posed by the FeB phase in addition to other advantages offered by CVD processes and microwave generated plasmas in general. Indentation testing of the boride layers revealed excellent adhesion strength for all borided interlayers, and above all, no evidence of cracking was observed for a sole Fe2B phase. As with boriding of 440C bearings, subsequent diamond deposition was achieved on these interlayers with substantially improved adhesion strength relative to diamond coated TiN interlayers. Both XRD and Raman spectroscopy confirmed a nanostructured diamond film with interfacial chromium carbides responsible for enhanced adhesion strength. Interlayers consisting solely of Fe2B have displayed an ability to support fully continuous nanostructured diamond films, yet additional study is required for consistent reproduction. This is in good agreement with initial work on pack borided high alloy steels

  13. Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

    Science.gov (United States)

    Halpern, Jeffrey M; Martin, Heidi B

    2014-02-01

    Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp 2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

  14. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  15. Fabrication of AlN thin films on different substrates at ambient temperature

    CERN Document Server

    Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

    2002-01-01

    Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

  16. Analyses of edge effects on residual stresses in film strip/substrate systems

    International Nuclear Information System (INIS)

    Hsueh, Chun-Hway

    2000-01-01

    The residual stress distribution in a thin-film strip overlaid on a substrate is influenced by the edges of the strip. An analytical model is developed to derive a closed-form solution for the stress distribution along the film width. Because the film is much thinner than the substrate, the stress variation through the film thickness is ignored; however, the stress variation through the substrate thickness is considered in the analysis. Compared to the existing analytical models, the present model is more rigorous and the analytical results agree better with both finite element results and experimental measurements. (c) 2000 American Institute of Physics

  17. Fabrication of hydroxyapatite thin films on polyetheretherketone substrates using a sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ozeki, K., E-mail: kazuhide.ozeki.365@vc.ibaraki.ac.jp [Department of Mechanical Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan); Masuzawa, T. [Department of Mechanical Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511 (Japan); Aoki, H. [International Apatite Institute Co., Ltd., 2-12-9, Misaki-cho, Chiyoda-ku, Tokyo 101-0061 (Japan)

    2017-03-01

    Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. A thin titanium (Ti) intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film to the PEEK substrate. The coated films were recrystallized using a hydrothermal treatment to reduce the dissolution of the HA film. The films were then characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and a UV-Vis spectrophotometer. A pull-out test was performed to measure the film-to-substrate adhesion strength, and an immersion test was performed in ultra-pure water. In the XRD patterns of the sputtered film with the Ti intermediate layer on the PEEK substrate, small HA peaks and large Ti peaks were observed. After the hydrothermal treatment, the intensity of the HA peaks increased. The transmittance of the HA films with 5 and 10 nm Ti intermediate layers was > 79% and 68%, respectively, in the visible light wavelength region (400–700 nm) after the hydrothermal treatment. The adhesion strength of the hydrothermally treated HA films increased with decreasing thickness of the Ti intermediate layer, and the strength reached 2.7 MPa with the 5-nm-thick Ti intermediate layer. In the immersion test, the HA film with a 5-nm-thick Ti intermediate layer without hydrothermal treatment exhibited a released Ti concentration of 42.0 ± 2.4 ppb. After hydrothermal treatment, the released Ti concentration decreased to 17.3 ± 1.1 ppb. - Highlights: • Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. • A thin Ti intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film. • The adhesion strength of the HA films with the Ti intermediate layer increased with decreasing thickness of the Ti layer.

  18. Fabrication of hydroxyapatite thin films on polyetheretherketone substrates using a sputtering technique

    International Nuclear Information System (INIS)

    Ozeki, K.; Masuzawa, T.; Aoki, H.

    2017-01-01

    Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. A thin titanium (Ti) intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film to the PEEK substrate. The coated films were recrystallized using a hydrothermal treatment to reduce the dissolution of the HA film. The films were then characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and a UV-Vis spectrophotometer. A pull-out test was performed to measure the film-to-substrate adhesion strength, and an immersion test was performed in ultra-pure water. In the XRD patterns of the sputtered film with the Ti intermediate layer on the PEEK substrate, small HA peaks and large Ti peaks were observed. After the hydrothermal treatment, the intensity of the HA peaks increased. The transmittance of the HA films with 5 and 10 nm Ti intermediate layers was > 79% and 68%, respectively, in the visible light wavelength region (400–700 nm) after the hydrothermal treatment. The adhesion strength of the hydrothermally treated HA films increased with decreasing thickness of the Ti intermediate layer, and the strength reached 2.7 MPa with the 5-nm-thick Ti intermediate layer. In the immersion test, the HA film with a 5-nm-thick Ti intermediate layer without hydrothermal treatment exhibited a released Ti concentration of 42.0 ± 2.4 ppb. After hydrothermal treatment, the released Ti concentration decreased to 17.3 ± 1.1 ppb. - Highlights: • Hydroxyapatite (HA) thin films were coated on a polyetheretherketone (PEEK) substrate using a sputtering technique. • A thin Ti intermediate layer was formed between the HA and the PEEK surface to improve adhesion of the HA film. • The adhesion strength of the HA films with the Ti intermediate layer increased with decreasing thickness of the Ti layer.

  19. Synthesis of LSM films deposited by dip-coating on YSZ substrate

    International Nuclear Information System (INIS)

    Conceicao, Leandro da; Souza, Mariana M.V.M.; Ribeiro, Nielson F.P.

    2010-01-01

    The dip-coating process was used to deposit films of La 0.7 Sr 0. 3MnO 3 (LSM) used as cathode in solid oxide fuel cells (SOFC). In this study we evaluated the relationship between the deposition parameters such as speed of withdrawal and number of deposited layers of LSM film on a substrate of 8% YSZ commercial, and structural properties, such as thickness and formation of cracks. The structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). With parameters set the film had good adhesion to the substrate with a thickness around 10 μm, showing possible adherence problems when more than one layer is deposited on the substrate. (author)

  20. Optical properties of thin Cu films as a function of substrate temperature

    CERN Document Server

    Savaloni, H

    2003-01-01

    Copper films (250 nm) deposited on glass substrates, at different substrate temperatures. Their optical properties were measured by ellipsometry (single wavelength of 589.3 nm) and spectrophotometry in the spectral range of 200-2600 nm. Kramers Kronig method was used for the analysis of the reflectivity curves of Cu films to obtain the optical constants of the films, while ellipsometry measurement was carried out as an independent method. The influence of substrate temperature on the microstructure of thin metallic films [Structure Zone Model ] is well established. The Effective Medium Approximation analysis was used to establish the relationship between the Structure Zone Model and Effective Medium Approximation predictions. Good agreements between Structure Zone Model as a function of substrate temperature and the values of volume fraction of voids obtained from Effective Medium Temperature analysis, are obtained; by increasing the substrate temperature the separation of the metallic grains decrease hence t...

  1. Adherence of diamond films on refractory metal substrates for thermionic applications

    International Nuclear Information System (INIS)

    Tsao, B.H.; Ramalingam, M.L.; Adams, S.F.; Cloyd, J.S.

    1991-01-01

    Diamond films are currently being considered as electrical insulation material for application in the thermionic fuel element of a power producing nuclear reactor system. The function of the diamond insulator in this application is to electrically isolate the collector of each cell in the TFE from the coolant and outer sheath. Deposition of diamond films on plane surfaces of Si/SiO 2 have already been demonstrated to be quite effective. However, the diamond films on refractory metal surfaces tend to spall off in the process of deposition revealing an inefficient adherence characteristic between the film and the substrate. This paper is geared towards explaining this deficiency by way of selected experimentation and the use of analytical tools to predict uncertainties such as the mismatch in coefficient of expansion, micrographic study of the interface between the film and the substrate and X-ray diffraction spectra. The investigation of the adherence characteristics of several diamond films on Mo and Nb substrates revealed that there was an allowable stress that resulted in the formation of the critical thickness for the diamond film

  2. Thin diamond films for tribological applications

    International Nuclear Information System (INIS)

    Wong, M.S.; Meilunas, R.; Ong, T.P.; Chang, R.P.H.

    1989-01-01

    Diamond films have been deposited on Si, Mo and many other substrates by microwave and radio frequency plasma enhanced chemical vapor deposition. Although the adhesion between the diamond film and most of the metal substrates is poor due to residual thermal stress from the mismatch of thermal expansion coefficients, the authors have developed processes to promote the growth of uniform and continuous diamond films with enhanced adhesion to metal substrates for tribological applications. The tribological properties of these films are measured using a ring-on-block tribotester. The coefficients of friction of diamond films sliding against a 52100 steel ring under the same experimental conditions are found to be significantly different depending on the morphology, grain size and roughness of the diamond films. However, under all cases tested, it is found that for uniform and continuous diamond films with small grain size of 1-3 micrometers, the coefficient of friction of the diamond film sliding against a steel ring under lubrication of a jet of mineral oil is about 0.04

  3. Substrate considerations for graphene synthesis on thin copper films

    International Nuclear Information System (INIS)

    Howsare, Casey A; Robinson, Joshua A; Weng Xiaojun; Bojan, Vince; Snyder, David

    2012-01-01

    Chemical vapor deposition on copper substrates is a primary technique for synthesis of high quality graphene films over large areas. While well-developed processes are in place for catalytic growth of graphene on bulk copper substrates, chemical vapor deposition of graphene on thin films could provide a means for simplified device processing through the elimination of the layer transfer process. Recently, it was demonstrated that transfer-free growth and processing is possible on SiO 2 . However, the Cu/SiO 2 /Si material system must be stable at high temperatures for high quality transfer-free graphene. This study identifies the presence of interdiffusion at the Cu/SiO 2 interface and investigates the influence of metal (Ni, Cr, W) and insulating (Si 3 N 4 , Al 2 O 3 , HfO 2 ) diffusion barrier layers on Cu–SiO 2 interdiffusion, as well as graphene structural quality. Regardless of barrier choice, we find the presence of Cu diffusion into the silicon substrate as well as the presence of Cu–Si–O domains on the surface of the copper film. As a result, we investigate the choice of a sapphire substrate and present evidence that it is a robust substrate for synthesis and processing of high quality, transfer-free graphene. (paper)

  4. Superstrong coupling of thin film magnetostatic waves with microwave cavity

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xufeng; Tang, Hong X., E-mail: hong.tang@yale.edu [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511 (United States); Zou, Changling [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511 (United States); Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States); Jiang, Liang [Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)

    2016-01-14

    We experimentally demonstrated the strong coupling between a microwave cavity and standing magnetostatic magnon modes in a yttrium iron garnet film. Such strong coupling can be observed for various spin wave modes under different magnetic field bias configurations, with a coupling strength inversely proportional to the transverse mode number. A comb-like spectrum can be obtained from these high order modes. The collectively enhanced magnon-microwave photon coupling strength is comparable with the magnon free spectral range and therefore leads to the superstrong coupling regime. Our findings pave the road towards designing a new type of strongly hybridized magnon-photon system.

  5. Molecular tailoring of interfaces for thin film on substrate systems

    Science.gov (United States)

    Grady, Martha Elizabeth

    Thin film on substrate systems appear most prevalently within the microelectronics industry, which demands that devices operate in smaller and smaller packages with greater reliability. The reliability of these multilayer film systems is strongly influenced by the adhesion of each of the bimaterial interfaces. During use, microelectronic components undergo thermo-mechanical cycling, which induces interfacial delaminations leading to failure of the overall device. The ability to tailor interfacial properties at the molecular level provides a mechanism to improve thin film adhesion, reliability and performance. This dissertation presents the investigation of molecular level control of interface properties in three thin film-substrate systems: photodefinable polyimide films on passivated silicon substrates, self-assembled monolayers at the interface of Au films and dielectric substrates, and mechanochemically active materials on rigid substrates. For all three materials systems, the effect of interfacial modifications on adhesion is assessed using a laser-spallation technique. Laser-induced stress waves are chosen because they dynamically load the thin film interface in a precise, noncontacting manner at high strain rates and are suitable for both weak and strong interfaces. Photodefinable polyimide films are used as dielectrics in flip chip integrated circuit packages to reduce the stress between silicon passivation layers and mold compound. The influence of processing parameters on adhesion is examined for photodefinable polyimide films on silicon (Si) substrates with three different passivation layers: silicon nitride (SiNx), silicon oxynitride (SiOxNy), and the native silicon oxide (SiO2). Interfacial strength increases when films are processed with an exposure step as well as a longer cure cycle. Additionally, the interfacial fracture energy is assessed using a dynamic delamination protocol. The high toughness of this interface (ca. 100 J/m2) makes it difficult

  6. Substrate effects on the characteristics of (In2O3)1-x (ZnO)x films

    International Nuclear Information System (INIS)

    Park, J. M.; Kim, J. J.; Kim, H. M.; Kim, J. H.; Ryu, S. W.; Park, S. H.; Ahn, J. S.

    2006-01-01

    The electrical and the optical properties of (In 2 O 3 ) 1-x (ZnO) x (IZO) films deposited by the rf magnetron sputtering on plastic substrates, such as polyethylene terephthalate (PET) and poly carbonate (PC), were investigated. The results are compared with those of IZO films deposited on a conventional coring glass (CG) substrate. The average transmittance of the IZO films deposited on plastic substrates is over 80 %, irrespective of the substrate, which is comparable to that of IZO films deposited on CG substrates. IZO films deposited on PC or PET substrates show larger resistivities than those deposited on CG substrates. This may be attributed to the fact that compositions, such as H 2 O or the organic solvent contained in the plastic substrates, are adsorbed into the IZO layer during sputtering. The surface resistance of the IZO films is nearly independent of the substrate and decreases with increasing deposition time. Compared to the IZO films deposited on PET substrates without hard coatings, those deposited on PET substrates with hard coatings show superior electrical stability for thermal environments.

  7. Permeation mechanisms of pulsed microwave plasma deposited silicon oxide films for food packaging applications

    International Nuclear Information System (INIS)

    Deilmann, Michael; Grabowski, Mirko; Theiss, Sebastian; Bibinov, Nikita; Awakowicz, Peter

    2008-01-01

    Silicon oxide barrier layers are deposited on polyethylene terephthalate as permeation barriers for food packaging applications by means of a low pressure microwave plasma. Hexamethyldisiloxane (HMDSO) and oxygen are used as process gases to deposit SiO x coatings via pulsed low pressure plasmas. The layer composition of the coating is investigated by Fourier transform infrared spectroscopy and energy dispersive x-ray spectroscopy to show correlations with barrier properties of the films. The oxygen permeation barrier is determined by the carrier gas method using an electrochemical detector. The transition from low to high barrier films is mapped by the transition from organic SiO x C y H z layers to quartz-like SiO 1.7 films containing silanol bound hydrogen. A residual permeation as low as J = 1 ± 0.3 cm 3 m -2 day -1 bar -1 is achieved, which is a good value for food packaging applications. Additionally, the activation energy E p of oxygen permeation is analysed and a strong increase from E p = 31.5 kJ mol -1 for SiO x C y H z -like coatings to E p = 53.7 kJ mol -1 for SiO 1.7 films is observed by increasing the oxygen dilution of HMDSO:O 2 plasma. The reason for the residual permeation of high barrier films is discussed and coating defects are visualized by capacitively coupled atomic oxygen plasma etching of coated substrates. A defect density of 3000 mm -2 is revealed

  8. Investigation and application of microwave electron cyclotron resonance plasma physical vapour deposition

    International Nuclear Information System (INIS)

    Ren Zhaoxing; Sheng Yanya; Shi Yicai; Wen Haihu; Cao Xiaowen

    1991-06-01

    The evaporating deposition of Ti film and Cu film by using microwave electron cyclotron resonance (ECR) technique was investigated. It deposition rate was about 50 nm/min and the temperature of the substrate was 50∼150 deg C. The thin amorphous films with strong adherent force were obtained. The sputtering deposition with ECR plasma was studied by employing higher plasma density and ionicity and negative substrate potential to make YBaCuO superconducting film. Its film was compact and amorphous with a thickness of 1.0 μm and the deposition rate was about 10 nm/min. The results show that this technique can initiate a high density and high ionicity plasma at lower gas pressure (10 -2 ∼10 -3 Pa). This plasma is the most suitable plasma source in thin film deposition process and surface treatment technique

  9. Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki; Kirino, Fumiyoshi

    2011-01-01

    Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110) fcc single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within ±0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

  10. Epitaxial Growth of Permalloy Thin Films on MgO Single-Crystal Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru; Tanaka, Takahiro; Matsubara, Katsuki; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

    2011-07-06

    Permalloy (Py: Ni - 20 at. % Fe) thin films were prepared on MgO single-crystal substrates of (100), (110), and (111) orientations by molecular beam epitaxy. Py crystals consisting of fcc(100) and hcp(112-bar 0) orientations epitaxially nucleate on MgO(100) substrates. With increasing the substrate temperature, the volume ratio of fcc(100) to hcp(112-bar 0) crystal increases. The metastable hcp(112-bar 0) structure transforms into more stable fcc(110) structure with increasing the film thickness. Py(110){sub fcc} single-crystal films are obtained on MgO(110) substrates, whereas Py films epitaxially grow on MgO(111) substrates with two types of fcc(111) variants whose orientations are rotated around the film normal by 180 deg. each other. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of these fcc-Py films agree within {+-}0.4% with the values of bulk fcc-Py crystal, suggesting that the strains in the films are very small. High-resolution transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the films around the Py/MgO(100) and the Py/MgO(110) interfaces to reduce the lattice mismatches. The magnetic properties are considered to be reflecting the magnetocrystalline anisotropies of bulk fcc-Py and/or metastable hcp-Py crystals and the shape anisotropy caused by the surface undulations.

  11. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    Science.gov (United States)

    Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

    1988-11-01

    It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

  12. Modification of Bi:YIG film properties by substrate surface ion pre-treatment

    Energy Technology Data Exchange (ETDEWEB)

    Shaposhnikov, A.N.; Prokopov, A.R.; Karavainikov, A.V.; Berzhansky, V.N.; Mikhailova, T.V. [Taurida National V.I. Vernadsky University, Vernadsky Avenue, 4, Simferopol, 95007 (Ukraine); Kotov, V.A. [V.A. Kotelnikov Institute of Radio Engineering and Electronics, RAS, 11 Mohovaya Street, Moscow, 125009 (Russian Federation); Balabanov, D.E. [Moscow Institute of Physics and Technology, Dolgoprudny, 141700 (Russian Federation); Sharay, I.V.; Salyuk, O.Y. [Institute of Magnetism, NAS of Ukraine, 03142, Kiev (Ukraine); Vasiliev, M. [Electron Science Research Institute, Edith Cowan University, 270 Joondalup Drive, Joondalup 6027 (Australia); Golub, V.O., E-mail: v_o_golub@yahoo.com [Institute of Magnetism, NAS of Ukraine, 03142, Kiev (Ukraine)

    2014-07-01

    Highlights: • Effects of substrates ion beam treatment on magnetoptical properties Bi:YIG films. • Substrate surface damage results in sign inversion of the magneto-optical effects. • Atomically smooth films growth takes place on low energy ions treated substrates. • High energy ions treatment results in selective nucleation mechanism of the growth. - Abstract: The effect of a controlled ion beam pre-treatment of (1 1 1)-oriented Gd{sub 3}Ga{sub 5}O{sub 12} substrates on the magneto-optical properties and surface morphology of the ultrathin bismuth-substituted yttrium–iron garnet films with a composition Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} was studied. It has been shown that the observed sign inversion of magneto-optical effects (Faraday rotation and magnetic circular dichroism) observed in films that were deposited on the GGG substrate pre-treated by 1 keV and 4 keV Ar{sup +} ion beams is a result of the substrate surface amorphization caused by the ion bombardment.

  13. Optical and mechanical properties of diamond like carbon films ...

    Indian Academy of Sciences (India)

    Diamond like carbon (DLC) films were deposited on Si (111) substrates by microwave electron cyclotron resonance (ECR) plasma chemical vapour deposition (CVD) process using plasma of argon and methane gases. During deposition, a d.c. self-bias was applied to the substrates by application of 13.56 MHz rf power.

  14. Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

    2014-07-21

    A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

  15. Physical properties of lanthanum monosulfide thin films grown on (100) silicon substrates

    Science.gov (United States)

    Cahay, M.; Garre, K.; Wu, X.; Poitras, D.; Lockwood, D. J.; Fairchild, S.

    2006-06-01

    Thin films of lanthanum monosulfide (LaS) have been deposited on Si (100) substrates by pulsed laser deposition. The films are golden yellow in appearance with a mirrorlike surface morphology and a sheet resistance around 0.1 Ω/□, as measured using a four-probe measurement technique. The thin films are characterized by atomic force microscopy (AFM), x-ray diffraction (XRD) analysis, high resolution transmission electron microscopy (HRTEM), ellipsometry, and Raman spectroscopy. The root-mean-square variation of (1 μm thick) film surface roughness measured over a 1 μm2 area by AFM was found to be 1.74 nm. XRD analysis of fairly thick films (micrometer size) reveals the growth of the cubic rocksalt structure with a lattice constant of 5.863(7) A˚, which is close to the bulk LaS value. HRTEM images reveal that the films are comprised of nanocrystals separated by regions of amorphous material. Two beam bright field TEM images show that there is a strain contrast in the Si substrate right under the interface with the LaS film and penetrating into the Si substrate. This suggests that there is an initial epitaxial-like growth of the LaS film on the Si substrate that introduces a strain as a result of the 8% lattice mismatch between the film and substrate. Ellipsometry measurements of the LaS films are well characterized by a Drude-Lorentz model from which an electron concentration of about 2.52×1022 cm-3 and a mobility around 8.5 cm2/V s are derived. Typical crystalline LaS features were evident in Raman spectra of the films, but the spectra also revealed their disordered (polycrystalline) nature.

  16. Morphology of CdSe films prepared by chemical bath deposition: The role of substrate

    International Nuclear Information System (INIS)

    Simurda, M.; Nemec, P.; Formanek, P.; Nemec, I.; Nemcova, Y.; Maly, P.

    2006-01-01

    We combine optical spectroscopy and transmission electron microscopy to study the growth and the structural morphology of CdSe films prepared by chemical bath deposition (CBD) on two considerably different substrates. The films grown on glass are compact and strongly adherent to the substrate. On the contrary, the films deposited on carbon-coated glass (with approx. 20 nm thick amorphous carbon layer) are only loosely adherent to the substrate. Using transmission electron microscopy we revealed that even though the films grown on both substrates are assembled from closely spaced nanocrystals with diameter of about 5 nm, the films morphology on the sub-micrometer scale is considerably different in the two cases. While the films deposited on glass are rather compact, the films prepared on carbon layer have high porosity and are formed by interconnected spheres which size is dependent on the duration of deposition (e.g. 155 nm for 6 h and 350 nm for 24 h). This shows that the choice of the substrate for CBD has a stronger influence on the sub-micrometer film morphology than on the properties of individual nanocrystals forming the film

  17. Observation of microwave conductivity in copper iodide films and relay effect in the dye molecules attached to CuI photocathode

    International Nuclear Information System (INIS)

    Sirimanne, Prasad M.; Soga, Tetsuo; Kunst, Marinus

    2005-01-01

    Microwave conductivity and two channels of recombination process were observed in the CuI films. Spin orbital splitting resulted in split in the valence band of CuI. The dye molecules attached to the CuI film act as an electron mediator in addition to the sensitization process under back wall-mode illumination. - Graphical abstract: Transient microwave-photoconductivity of CuI film

  18. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    International Nuclear Information System (INIS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

    2012-01-01

    Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  19. Buckling of a stiff thin film on an elastic graded compliant substrate

    Science.gov (United States)

    Chen, Zhou; Chen, Weiqiu; Song, Jizhou

    2017-12-01

    The buckling of a stiff film on a compliant substrate has attracted much attention due to its wide applications such as thin-film metrology, surface patterning and stretchable electronics. An analytical model is established for the buckling of a stiff thin film on a semi-infinite elastic graded compliant substrate subjected to in-plane compression. The critical compressive strain and buckling wavelength for the sinusoidal mode are obtained analytically for the case with the substrate modulus decaying exponentially. The rigorous finite element analysis (FEA) is performed to validate the analytical model and investigate the postbuckling behaviour of the system. The critical buckling strain for the period-doubling mode is obtained numerically. The influences of various material parameters on the results are investigated. These results are helpful to provide physical insights on the buckling of elastic graded substrate-supported thin film.

  20. Ultra-Fast Microwave Synthesis of ZnO Nanorods on Cellulose Substrates for UV Sensor Applications

    Directory of Open Access Journals (Sweden)

    Ana Pimentel

    2017-11-01

    Full Text Available In the present work, tracing and Whatman papers were used as substrates to grow zinc oxide (ZnO nanostructures. Cellulose-based substrates are cost-efficient, highly sensitive and environmentally friendly. ZnO nanostructures with hexagonal structure were synthesized by hydrothermal under microwave irradiation using an ultrafast approach, that is, a fixed synthesis time of 10 min. The effect of synthesis temperature on ZnO nanostructures was investigated from 70 to 130 °C. An Ultra Violet (UV/Ozone treatment directly to the ZnO seed layer prior to microwave assisted synthesis revealed expressive differences regarding formation of the ZnO nanostructures. Structural characterization of the microwave synthesized materials was carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The optical characterization has also been performed. The time resolved photocurrent of the devices in response to the UV turn on/off was investigated and it has been observed that the ZnO nanorod arrays grown on Whatman paper substrate present a responsivity 3 times superior than the ones grown on tracing paper. By using ZnO nanorods, the surface area-to-volume ratio will increase and will improve the sensor sensibility, making these types of materials good candidates for low cost and disposable UV sensors. The sensors were exposed to bending tests, proving their high stability, flexibility and adaptability to different surfaces.

  1. Heat explosion approach to radiofrequency heating of a conductor film on silicon substrate: Application for silicide film formation

    International Nuclear Information System (INIS)

    Pelleg, J.; Rosenberg, S.; Sinder, M.

    2011-01-01

    A qualitative analysis of the kinetics of phase formation in a conductor film/Si substrate system by radiofrequency (RF) heating is presented. The analysis is done by using the mathematical approach of the heat explosion theory. It is shown that the system can experience heating at constant temperature or a sudden temperature increase, i.e. heat explosion. The relation between the parameters of the system in the heat explosion regime is presented in a simple analytical form. It was found that measurable quantities, such as film thickness, sheet resistance, specimen dimensions and applied magnetic field, determine whether the process occurs in the constant heating or heat explosion stages. The model was tested for the Ta-Ti-Si system by considering some of the mentioned measurable quantities which were obtained by RF induction heating of Ta-Ti film on Si(1 1 1) and Si(1 0 0) substrates. The agreement of theory with experiment is reasonable. Concentration of Ta in the conductor film, film thickness and the orientation of the Si substrate might influence the reaction rate. On Si(1 1 1) substrates the reaction goes to completion, whereas on Si(1 0 0) intermediate phases remain. This observation was explained in terms of an interface reaction-controlled process of Si atoms transferring from the substrate to the film.

  2. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, José H. D. da [Universidade Estadual Paulista, UNESP, Bauru, São Paulo 17033-360 (Brazil); Leite, Douglas M. G. [Universidade Federal de Itajubá, UNIFEI, Itajubá, Minas Gerais 37500-903 (Brazil); Bortoleto, José R. R. [Universidade Estadual Paulista, UNESP, Sorocaba, São Paulo 18087-180 (Brazil)

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 °C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 °C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 °C, 30 W and 600 °C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  3. Substrate-free microwave synthesis of graphene: experimental conditions and hydrocarbon precursors

    Energy Technology Data Exchange (ETDEWEB)

    Dato, Albert [Applied Science and Technology Graduate Group, University of California, Berkeley, CA 94720 (United States); Frenklach, Michael, E-mail: amdato@me.berkeley.edu, E-mail: myf@me.berkeley.edu [Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740 (United States)

    2010-12-15

    The effects of applied microwave power, gas flow rate and precursor composition on the substrate-free gas-phase synthesis of graphene were investigated. Graphene was produced through the delivery of ethanol droplets into argon plasmas, and a decrease in the flow rate of the gas used to generate the plasmas resulted in the formation of graphitic particles and bulk graphite structures. Carbonaceous soot particles were created by delivering isopropyl alcohol into the reactor, while no solid matter was created from methanol. Increasing the applied microwave power was found to have no effect on the structures of the synthesized materials. These findings indicated that the synthesis of graphene in the gas phase was the result of the slow inception and extremely fast growth of aromatic nuclei in the plasma afterglows.

  4. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    International Nuclear Information System (INIS)

    Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

    1988-01-01

    We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

  5. Fracture characterization of inhomogeneous wrinkled metallic films deposited on soft substrates

    Science.gov (United States)

    Kishida, Hiroshi; Ishizaka, Satoshi; Nagakura, Takumi; Suzuki, Hiroaki; Yonezu, Akio

    2017-12-01

    This study investigated the fracture properties of wrinkled metallic films on a polydimethylsiloxane (PDMS) soft substrate. In particular, the crack density of the wrinkled film during tensile deformation was examined. In order to achieve better deformability of metallic thin films, a method to fabricate a wrinkled thin film on a PDMS soft substrate was first established. The copper (Cu) nano-film fabricated in this study possessed a wrinkled geometry, which plays a critical role in determining the extent of large elastic deformation. To create the wrinkled structure, wet-etching with a polymeric sacrificial layer was used. A sacrificial layer was first deposited onto a silicone rubber sheet. During the curing process of the layer, a compressive strain was applied such that the hardened surface layer buckled, and a wrinkled form was obtained. Subsequently, a PDMS solution was used to cover the layer in order to form a wrinkled PDMS substrate. Finally, the Cu film was deposited onto the wrinkled PDMS, such that the wrinkled Cu film on a soft PDMS substrate was fabricated. The use of uni-axial tensile tests resulted in film crack generation at the stress concentration zone in the wrinkled structure of the films. When the tensile loading was increased, the number of cracks increased. It was found that the increase in crack density was strongly related to the inhomogeneous nature of the wrinkled structure. Such a trend in crack density was investigated using FEM (finite element method) computations, such that this study established a simple mechanical model that may be used to predict the increase in crack density during tensile deformation. This model was verified through several experiments using various wrinkle patterns. The proposed mechanical model may be useful to predict the crack density of a wrinkled metallic film subject to tensile loading.

  6. Substrate dependent morphologies of self-assembled nanocrystalline manganite films: An atomic force microscopy study

    International Nuclear Information System (INIS)

    Kale, S.N.; Mona, J.; Ganesan, V.; Choudhary, R.J.; Phase, D.M.

    2009-06-01

    Thin films of La 0 .7Sr 0 .3MnO 3 (LSMO) have been deposited on different substrates: Si (001), Al 2 O 3 (AlO) (0001) and LaAlO 3 (LAO) (001), using a pulsed laser deposition system. 100 nm films have been deposited at substrate temperature of 700 deg C and oxygen partial pressure of 400 mTorr. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al 2 O 3 substrates, while a c-axis oriented growth on LAO substrate. Atomic force microscopy images exhibit interesting island-like morphology of grain size ∼ 250 nm on Si substrate. Similar morphology with much smaller (∼ 150 nm), closely packed islands are seen to grow on AlO substrate. Films on LAO show comparatively a smooth morphology with the grains size less than 100 nm, decorated by characteristic depressions at the grain boundaries. The formation of self-assembled nanostructures can be understood on the basis of film-substrate lattice misfit, strains in the systems and eventual growth of the films to attain energy minimization (author)

  7. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  8. Investigation of carbon nanotube-containing film on silicon substrates and its tribological behavior

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Zhiyong [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Cheng, Xianhua, E-mail: xhcheng@sjtu.edu.cn [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2015-11-15

    Highlights: • CNT-containing film was self-assembled on silicon substrates. • CNTs are strongly bonded with the substrates by chemical combination between La and oxygen-containing functional groups. • CNT-containing film has excellent friction reduction, load-carrying capacity and anti-wear ability. - Abstract: Carbon nanotubes (CNTs) were functionalized with Lanthanum (La) modifier and appropriate acid-treatment methods. CNT-containing film was deposited on silicon substrates via a self-assembly process. The formation and microstructure of La treated CNTs and CNT-containing film were characterized by high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), X-ray photoelectron spectrometry (XPS) and water contact angle (WCA). Its tribological properties were evaluated with a UMT-2MT reciprocating friction tester. The results show that CNTs were adsorbed on silicon substrates by means of chemically bonding between La and oxygen-containing functional groups. The friction coefficient of the silicon substrates is reduced from 0.87 to 0.12 after the deposition of CNT-containing film on its surface. CNT-containing film shows excellent antiwear, friction reducing ability and load-carrying capacity due to excellent mechanical and self-lubrication properties of CNTs.

  9. Ductile film delamination from compliant substrates using hard overlayers.

    Science.gov (United States)

    Cordill, M J; Marx, V M; Kirchlechner, C

    2014-11-28

    Flexible electronic devices call for copper and gold metal films to adhere well to polymer substrates. Measuring the interfacial adhesion of these material systems is often challenging, requiring the formulation of different techniques and models. Presented here is a strategy to induce well defined areas of delamination to measure the adhesion of copper films on polyimide substrates. The technique utilizes a stressed overlayer and tensile straining to cause buckle formation. The described method allows one to examine the effects of thin adhesion layers used to improve the adhesion of flexible systems.

  10. Substrate dependent physical properties of evaporated CdO thin films for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Purohit, Anuradha; Chander, S.; Patel, S.L. [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India); Rangra, K.J. [Sensors and Transducers Group, CSIR-CEERI, Pilani-333031 (India); Dhaka, M.S., E-mail: msdhaka75@yahoo.co.in [Department of Physics, Mohanlal Sukhadia University, Udaipur-313001 (India)

    2017-06-15

    Highlights: • Substrate dependent physical properties of CdO thin films are carried out. • XRD patterns reveal that the films have cubic structure of space group Fm3m. • Optical direct band gap is found to vary with the substrates. • SEM images show that the films are compact and homogeneous. • I–V characteristics show ohmic behavior of the deposited CdO films. - Abstract: In this study, CdO thin films were grown by e-beam evaporation technique on glass, indium tin oxide (ITO), fluorine-doped tin oxide (FTO) and silicon (Si) wafer. The deposited films were analyzed by X-ray diffraction (XRD), UV–Vis spectrophotometer, scanning electron microscopy, energy dispersive spectroscopy (EDS) and source meter (current–voltage) for structural, optical, surface morphological, elemental and electrical analysis, respectively. The films have single phase of cubic structure (space group Fm3m) with (200) preferred orientation. The structural parameters viz. inter-planar spacing, grain size, lattice constant, internal strain and dislocation density are calculated and found to vary with the nature of the substrates. The optical band gap was found in the range 2.24–3.95 eV and strongly dependents on the substrates. The SEM analysis shows that the films are compact, homogeneous and have granular structure without any defects like pin holes and cracks. The EDS spectra confirmed the presence of cadmium (Cd) and oxygen (O) in the films deposited on different substrates. The current–voltage characteristics of the films show ohmic behavior.

  11. Differences in structure and magnetic behavior of Mn-AlN films due to substrate material

    International Nuclear Information System (INIS)

    Sato, Takanobu; Nakatani, Ryoichi; Endo, Yasushi; Kirino, Fumiyoshi

    2009-01-01

    The structure and magnetic behavior of Mn-AlN (Al 1-x Mn x N, x = 0.03, 0.04) films deposited on thermally oxidized Si (001) substrates and sapphire (0001) substrates were studied. Mn-AlN films deposited on each substrate had a wuertzite-type AlN phase with a preferentially oriented c-axis. Mn-AlN films that were deposited on Si (001) substrate exhibited paramagnetic behavior. In addition to paramagnetic behavior, weak ferromagnetic behavior with curie temperatures higher than room temperature were observed for Mn-AlN films deposited on sapphire (0001) substrates.

  12. Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-05-07

    Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

  13. Comparative Study of Electroless Copper Film on Different Self-Assembled Monolayers Modified ABS Substrate

    Directory of Open Access Journals (Sweden)

    Jiushuai Xu

    2014-04-01

    Full Text Available Copper films were grown on (3-Mercaptopropyltrimethoxysilane (MPTMS, (3-Aminopropyltriethoxysilane (APTES and 6-(3-(triethoxysilylpropylamino-1,3,5- triazine-2,4-dithiol monosodium (TES self-assembled monolayers (SAMs modified acrylonitrile-butadiene-styrene (ABS substrate via electroless copper plating. The copper films were examined using scanning electron microscopy (SEM and X-ray diffraction (XRD. Their individual deposition rate and contact angle were also investigated to compare the properties of SAMs and electroless copper films. The results indicated that the formation of copper nuclei on the TES-SAMs modified ABS substrate was faster than those on the MPTMS-SAMs and APTES-SAMs modified ABS substrate. SEM images revealed that the copper film on TES-SAM modified ABS substrate was smooth and uniform, and the density of copper nuclei was much higher. Compared with that of TES-SAMs modified resin, the coverage of copper nuclei on MPTMS and APTES modified ABS substrate was very limited and the copper particle size was too big. The adhesion property test demonstrated that all the SAMs enhanced the interfacial interaction between copper plating and ABS substrate. XRD analysis showed that the copper film deposited on SAM-modified ABS substrate had a structure with Cu(111 preferred orientation, and the copper film deposited on TES-SAMs modified ABS substrate is better than that deposited on MPTMS-SAMs or APTES-SAMs modified ABS resins in electromigrtion resistance.

  14. Characterization of PZT thin films on metal substrates

    International Nuclear Information System (INIS)

    Dutschke, A.

    2008-01-01

    Lead zirconate titanate (PbZr x Ti 1-x O 3 ,PZT) is one of the most applied ceramic materials because of its distinctive piezo- and ferroelectric properties. Prepared as thin films on flexible, metallic substrates it can be used for various applications as strain gauges, key switches, vibration dampers, microactuators and ultrasonic transducers. The aim of this work is to analyze the microstructure and the phase-content of PZT-thin films deposited on temperature- und acid-resistant hastelloy-sheets, to correlate the results with the ferroelectric and dielectric properties. It is demonstrated, that the specific variation of the microstructure can be achieved by different thermal treatments and the selective addition of Neodymium as dopant. Nd-doping leads to a shift of the maximum nucleation rate towards reduced temperatures and a decrease in the rate of growth compared to undoped films. The PZT-films are prepared by a sol-gel-process in fourfold multilayers with a composition near the morphotropic phase boundary, where the tetragonal und rhombohedral perovskite-phases coexist. The crystallisation in Nd-doped and undoped films takes place heterogeneously, preferentially at the interfaces and on the surface of the multilayered films as well as on the inner surface of pores within the films. For the first time, the Zr:Ti fluctuation phenomena emerging in sol-gel derived PZT films is related to the microstructure and the local phase content on a nanometer scale. In this connection it is proved, that long-distance Zr:Ti gradients arise preferentially before and during the crystallisation of the pyrochlore phase. During the following crystallisation of the perovskite phase, the crystallites grow across these gradients without modifying them. It is pointed out that the fluctuation in the Zr:Ti ratio has only minor influence on the amount of the tetragonal or rhombohedral distortion of the crystallites after the transition from the para- to the ferroelectric state due to

  15. Rapid plasma treatment of polyimide for improved adhesive and durable copper film deposition

    International Nuclear Information System (INIS)

    Usami, Kenji; Ishijima, Tatsuo; Toyoda, Hirotaka

    2012-01-01

    To improve adhesion at the interface between Cupper (Cu) and polyimide (PI) layers, a PI film surface was treated with a microwave-excited plasma. The Ar/N 2 plasma treatment improved the Cu adhesion force to 10 N/cm even for PI substrates with absorbed water. A dramatic improvement of the adhesion durability was achieved by depositing a thin carbon film (C) on the PI substrate as an interlayer between PI and Cu using a microwave plasma followed by treatment with the Ar/N 2 plasma prior to the Cu deposition. After a 20-h accelerated aging test, the reduction of the adhesion force for the resulting Cu/C/PI sample was only 10%, whereas that for the Cu/PI sample was 55%. To gain insight into the film properties, the interface between the Cu and PI film was investigated by X-ray photoelectron spectroscopy.

  16. Films nématiques minces sur substrats liquides

    OpenAIRE

    Delabre , Ulysse

    2009-01-01

    This work analyzes the organization of thin films of nematic liquid crystals on liquid substrates (water and glycerol). In this situation, the planar anchoring at the liquid interface is stronger than the homeotropic anchorage at the air interface. Below a critical thickness about 0.5-0.6 µm, stripes appear that correspond to a modulation of the nematic orientation. The stripe wavelength is much larger than the film thickness. We have analyzed the specific situation of very thin films and we ...

  17. Effect of Substrate Roughness on Adhesion and Structural Properties of Ti-Ni Shape Memory Alloy Thin Film.

    Science.gov (United States)

    Kim, Donghwan; Lee, Hyunsuk; Bae, Joohyeon; Jeong, Hyomin; Choi, Byeongkeun; Nam, Taehyun; Noh, Jungpil

    2018-09-01

    Ti-Ni shape memory alloy (SMA) thin films are very attractive material for industrial and medical applications such as micro-actuator, micro-sensors, and stents for blood vessels. An important property besides shape memory effect in the application of SMA thin films is the adhesion between the film and the substrate. When using thin films as micro-actuators or micro-sensors in MEMS, the film must be strongly adhered to the substrate. On the other hand, when using SMA thin films in medical devices such as stents, the deposited alloy thin film must be easily separable from the substrate for efficient processing. In this study, we investigated the effect of substrate roughness on the adhesion of Ti-Ni SMA thin films, as well as the structural properties and phase-transformation behavior of the fabricated films. Ti-Ni SMA thin films were deposited onto etched glass substrates with magnetron sputtering. Radio frequency plasma was used for etching the substrate. The adhesion properties were investigated through progressive scratch test. Structural properties of the films were determined via Feld emission scanning electron microscopy, X-ray diffraction measurements (XRD) and Energy-dispersive X-ray spectroscopy analysis. Phase transformation behaviors were observed with differential scanning calorimetry and low temperature-XRD. Ti-Ni SMA thin film deposited onto rough substrate provides higher adhesive strength than smooth substrate. However the roughness of the substrate has no influence on the growth and crystallization of the Ti-Ni SMA thin films.

  18. Substrate dependent hierarchical structures of RF sputtered ZnS films

    Science.gov (United States)

    Chalana, S. R.; Mahadevan Pillai, V. P.

    2018-05-01

    RF magnetron sputtering technique was employed to fabricate ZnS nanostructures with special emphasis given to study the effect of substrates (quartz, glass and quartz substrate pre-coated with Au, Ag, Cu and Pt) on the structure, surface evolution and optical properties. Type of substrate has a significant influence on the crystalline phase, film morphology, thickness and surface roughness. The present study elucidates the suitability of quartz substrate for the deposition of stable and highly crystalline ZnS films. We found that the role of metal layer on quartz substrate is substantial in the preparation of hierarchical ZnS structures and these structures are of great importance due to its high specific area and potential applications in various fields. A mechanism for morphological evolution of ZnS structures is also presented based on the roughness of substrates and primary nonlocal effects in sputtering. Furthermore, the findings suggest that a controlled growth of hierarchical ZnS structures may be achieved with an ordinary RF sputtering technique by changing the substrate type.

  19. Sinterização de filmes finos de LiNbO3 em forno microondas: estudo da influência da direção do fluxo de calor Sintering of LiNbO3 thin films in microwave furnace: study of the influence of the heat flow direction

    Directory of Open Access Journals (Sweden)

    N. S. L. S. Vasconcelos

    2004-06-01

    Full Text Available Filmes finos de LiNbO3 foram preparados pelo método dos precursores poliméricos e depositados por "spin coating" sobre substratos de safira (0001. Os filmes foram tratados em forno microondas doméstico a 400 ºC por 15 e 20 min. Um material com alta perda dielétrica (susceptor de SiC foi usado para absorver energia das microondas e transformá-la em calor. Este calor foi transferido para o filme a fim de promover a sua cristalização. O susceptor foi posicionado acima do filme ou embaixo do substrato. Desta forma, a influência da direção do fluxo de calor na cristalização das amostras foi verificada. Os filmes foram caracterizados por difração de raios X, microscopia de força atômica e espectrofotometria (transmitância na região UV-visível e o índice de refração foi determinado por elipsometria. O crescimento epitaxial foi observado para o filme com susceptor posicionado embaixo do substrato. Verificou-se que os grãos apresentaram crescimento aleatório quando o susceptor foi posicionado acima do filme. Os filmes apresentaram-se relativamente densos, homogêneos e lisos, com boas propriedades ópticas.LiNbO3 thin films were prepared using a polymeric precursor solution deposited by spin coating on (0001 sapphire substrate. Heat treatment of the films was carried out in a microwave oven at 400 ºC for 15 and 20 min. A SiC susceptor (material with high dielectric loss was used to absorb microwave energy and transfer the heat to the film in order to promote crystallization. The susceptor was placed above the film or below the substrate. Thus, the influence of the heat flux direction on the sample crystallization was verified. The films were characterized by X-ray diffraction, atomic force microscopy and spectrophotometry (transmittance in the UV-Visible region and the refractive index was determined with an ellipsometer. The epitaxial growth was observed for the film with the susceptor placed below the substrate. Random growth

  20. Influence of the substrate texture on the structural and electrochemical properties of sputtered LiCoO2 thin films

    International Nuclear Information System (INIS)

    Jung, Ki-Taek; Cho, Gyu-Bong; Kim, Ki-Won; Nam, Tae-Hyun; Jeong, Hyo-Min; Huh, Sun-Chul; Chung, Han-Shik; Noh, Jung-Pil

    2013-01-01

    LiCoO 2 thin films were fabricated on textured and annealed STS304 substrates by direct current magnetron sputtering method. The effects of the substrate texture on the structural and electrochemical properties of the LiCoO 2 thin film deposited on both the substrates have been investigated. The crystal structures and surface morphologies of the deposited films were analyzed by X-ray diffractometry (XRD), Raman spectroscopy, and field emission scanning electron microscopy (FE-SEM). Based on the XRD analysis, the LiCoO 2 thin film deposited on the textured substrate was found to exhibit (003) preferred orientation, while the film deposited on annealed substrate exhibited (104) preferred orientation. In addition, SEM analysis revealed that the film deposited on the textured substrate showed a smooth morphology. On the other hand, the film deposited on the annealed substrate exhibited a very rough surface morphology, which resulted in a higher surface area. Consequently, the initial discharge capacity of the film deposited on the annealed substrate was higher than that of the film deposited on the textured substrate. The film deposited on the textured substrate exhibited a good cyclic performance compared to the film deposited on the annealed substrate. - Highlights: • The sputtered LiCoO 2 thin films were influenced by the substrate texture. • The film deposited on the annealed substrate exhibited (104) preferred orientation. • The film deposited on the textured substrate exhibited a good cyclic performance

  1. Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films

    International Nuclear Information System (INIS)

    Schmid, U.; Seidel, H.

    2005-01-01

    In this study, the influence of substrate properties (e.g. roughness characteristics and chemical composition) on the electrical resistivity of evaporated molybdenum thin films is investigated as a function of varying parameters, such as film thickness (25-115 nm) and post-deposition annealing with temperatures up to T PDA = 900 deg. C. A thermally oxidized silicon wafer with very low surface roughness was used as one substrate type. In contrast, a low temperature co-fired ceramics substrate with a glass encapsulant printed in thick film technology is the representative for rough surface morphology. The electrical resistivity follows the prediction of the size effect up to T PDA = 600 deg. C independent of substrate nature. On the silicon-based substrate, the thickness-independent portion of the film resistivity ρ g in the 'as deposited' state is about 29 times higher than the corresponding bulk value for a mono-crystalline sample. Thin films of this refractory metal on the SiO 2 /Si substrate exhibit an average grain size of 4.9 nm and a negative temperature coefficient of resistivity (TCR). On the glass/ceramic-based substrate, however, ρ g is half the value as compared to that obtained on the SiO 2 /Si substrate and the TCR is positive

  2. Off-axis sputter deposition of YBa2Cu3O7 thin films for microwave applications

    International Nuclear Information System (INIS)

    Greene, L.H.; Bagley, B.G.; Feldmann, W.L.; Barner, J.B.; Shokoohi, F.; Miceli, P.; Wilkens, B.J.; Fathy, A.; Kalokitis, D.; Pendrick, V.

    1991-01-01

    Thin films of superconducting YBa 2 Cu 3 O 7 were grown in situ by off-axis sputter deposition for microwave device fabrication. These ∼1 cm 2 films, which are reproducible, exhibit midpoint T c 's of 89--90.5 K as measured by ac susceptibility, ion channeling yields of 4.7%--6%, and c-axis rocking-curve half-widths of 0.5 degree, even with a rich microstructure as seen by scanning electron microscopy. Two films were photodefined into miniature X-band microwave bandpass filters. These narrow-band filters (0.5% bandwidth) exhibited 4.4-and 4.5-dB insertion losses at 77 K and 9.25 GHz, with little temperature dependence below 80 K

  3. Dewetting behavior of Au films on porous substrates

    International Nuclear Information System (INIS)

    Zhao Xiaowei; Lee, Ung-Ju; Lee, Kun-Hong

    2010-01-01

    Understanding the stability of thin films and their spontaneous pattern formation upon dewetting is essential to a host of physical phenomena. In this paper, we study the dewetting phenomena of Au thin films deposited on anodic aluminum oxide (AAO) membranes to analyze the stability of the metal film on porous substrates. AAO membranes, as-sputtered and dewetted Au films are all characterized by scanning electronic microscopy and X-ray diffraction. We found that both the roughness of AAO surface and modification of AAO pores exhibit remarkable influences on the dewetting behavior of Au films. The observed dewetting phenomena are explained from an energetic point of view since dewetting is a process of minimization of the system free energy.

  4. A miniaturized Microwave Bandpass Filter Based on Modified (Mg0.95Ca0.05TiO3 Substrate

    Directory of Open Access Journals (Sweden)

    Hu Mingzhe

    2016-01-01

    Full Text Available A microwave miniaturized bandpass filter using (Mg0.95Ca0.05TiO3 (abbreviated as 95MCT hereafter ceramic substrate is investigated in the present paper. The paper studies the sintering and microwave dielectric properties of Al2O3, La2O3 and SiO2 co-doped 95MCT. The XRD pattern shows that a secondary phase MgTi2O5 is easily segregated in 95MCT ceramic, however, through co-doping it can be effectively suppressed, and the microwave dielectric properties, especially, the Qf value can be significantly improved. Through optimizing the co-doping ratio of Al2O3, La2O3 and SiO2, the sintering temperature of 95MCT ceramic can be lowered by 80°C, and the microwave dielectric properties can reach Qf=61856GHz and εr=19.84, which indicates the modified 95MCT ceramic have a great potential application in microwave communication devices. Based on this, we also designed a miniaturized microwave bandpass filter (BPF on modified 95MCT substrate. Through a full wave electromagnetic structure simulation, the results show that the center frequency of the BPF is 2.45GHz and the relative bandwidth is 4.09% with the insertion loss of less than 0.2dB in the whole bandpass.

  5. Influence of the substrate on the morphological evolution of gold thin films during solid-state dewetting

    International Nuclear Information System (INIS)

    Nsimama, Patrick D.; Herz, Andreas; Wang, Dong; Schaaf, Peter

    2016-01-01

    Highlights: • Dewetting of thin gold films is faster on TiO_2 than on SiO_2. • Dewetting of thin gold films is faster on amorphous TiO_2 than on crystalline TiO_2. • The kinetics is attributed to the energy of adhesion. • The morphology of thin Au films deposited on TiO_2 substrates is different to those deposited on SiO_2 substrates. • The dewetting activation energy of Au films deposited on crystalline substrates was higher than the activation energy of Au nanofilms deposited on amorphous TiO_2 substrates. - Abstract: The evolution of electron-beam evaporated Au thin films deposited on crystalline TiO_2 (c-TiO_2) and amorphous TiO_2 (a-TiO_2) as well as amorphous SiO_2 substrates are investigated. The kinetic of dewetting is clearly dependent on the type of substrate and is faster on TiO_2 substrates than on SiO_2 substrates. This difference can result from the difference in adhesion energy. Furthermore, the kinetic of dewetting is faster on a-TiO_2 than on c-TiO_2, possibly due to the crystallization of TiO_2 during annealing induced dewetting process. The morphologies of dewetted Au films deposited on crystalline TiO_2 are characterized by branched holes. The XRD patterns of the Au films deposited on TiO_2 substrates constituted peaks from both metallic Au and anatase TiO_2. The activation energy of Au films deposited on crystalline TiO_2 substrates was higher than that that of the films deposited on amorphous TiO_2 substrates.

  6. Effect of substrate temperature and oxygen partial pressure on RF sputtered NiO thin films

    Science.gov (United States)

    Cheemadan, Saheer; Santhosh Kumar, M. C.

    2018-04-01

    Nickel oxide (NiO) thin films were deposited by RF sputtering process and the physical properties were investigated for varying substrate temperatures and oxygen partial pressure. The variation of the crystallographic orientation and microstructure of the NiO thin films with an increase in substrate temperature were studied. It was observed that NiO thin films deposited at 350 °C shows relatively good crystalline characteristics with a preferential orientation along (111) plane. With the optimum substrate temperature of 350 °C, the NiO thin films were deposited under various oxygen partial pressures at the same experimental conditions. The structural, optical and electrical properties of NiO thin films under varying oxygen partial pressure of 10%–50% were investigated. From XRD it is clear that the films prepared in the pure argon atmosphere were amorphous while the films in oxygen partial pressure exhibited polycrystalline NiO phase. SEM and AFM investigations unveil that the higher substrate temperature improves the microstructure of the thin films. It is revealed that the NiO thin films deposited at oxygen partial pressure of 40% and a substrate temperature of 350 °C, showed higher electrical conductivity with p-type characteristics.

  7. Radiolytic preparation of thin Au film directly on resin substrate using high-energy electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Ohkubo, Yuji, E-mail: okubo@upst.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Seino, Satoshi; Nakagawa, Takashi; Kugai, Junichiro [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ueno, Koji [Japan Electron Beam Irradiation Service Ltd., 5-3 Ozushima, Izumiohtsu, Osaka 595-0074 (Japan); Yamamoto, Takao A. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2016-04-01

    A novel method for preparing thin Au films directly on resin substrates using an electron beam was developed. The thin Au films were prepared on a resin substrate by the reduction of Au ions in an aqueous solution via irradiation with a high-energy electron beam (4.8 MeV). This reduction method required 7 s of the irradiation time of the electron beam. Furthermore, no reductant or catalyst was needed. As the concentration of Au ions in the precursor solution was increased, the amount of Au deposited on the resin substrate increased, too, and the structure of the prepared Au film changed. As a result, the film color changed as well. Cross-sectional scanning electron microscope images of the thus-prepared Au film indicated that the Au films were consisted of two layers: a particle layer and a bottom bulk layer. There was strong adhesion between the Au films and the underlying resin substrates. This was confirmed by the tape-peeling test and through ultrasonic cleaning. After both processes, Au remained on the resin substrates, while most of the particle-like moieties were removed. This indicated that the thin Au films prepared via irradiation with a high-energy electron beam adhered strongly to the resin substrates. - Highlights: • A thin gold (Au) film was formed by EBIRM for the first time. • The irradiation time of the electron beam was less than 10 s. • Thin Au films were obtained without reductant or catalyst. • Au films were consisted of two layers: a particle layer and a bottom bulk layer. • There was strong adhesion between the bottom bulk layer and the underlying resin substrates.

  8. Investigation of iron film-substrate interfaces using Rutherford backscattering and channeling techniques

    International Nuclear Information System (INIS)

    Maheswaran, S.; Thevuthasan, S.

    1999-01-01

    Thin films of α-Fe 2 O 3 (0001) (hematite) were epitaxially grown on Al 2 O 3 (0001) substrates using the new molecular beam epitaxy (MBE) system at the Environmental Molecular Sciences Laboratory (EMSL). We have investigated the interface between the hematite films and sapphire substrates using Rutherford Backscattering (RBS) and channeling experiments. Theoretical simulations were performed using VEGAS code to investigate the surface and interface structural properties of the films

  9. Gold film-catalysed benzannulation by Microwave-Assisted, Continuous Flow Organic Synthesis (MACOS

    Directory of Open Access Journals (Sweden)

    Gjergji Shore

    2009-07-01

    Full Text Available Methodology has been developed for laying down a thin gold-on-silver film on the inner surface of glass capillaries for the purpose of catalysing benzannulation reactions. The cycloaddition precursors are flowed through these capillaries while the metal film is being heated to high temperatures using microwave irradiation. The transformation can be optimized rapidly, tolerates a wide number of functional groups, is highly regioselective, and proceeds in good to excellent conversion.

  10. Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films.

    Science.gov (United States)

    Tierno, Davide; Dekkers, Matthijn; Wittendorp, Paul; Sun, Xiao; Bayer, Samuel C; King, Seth T; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana P; Adelmann, Christoph

    2018-05-01

    The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.

  11. Growth of InN films on spinel substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitamura, K. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Ohta, J.; Fujioka, H. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kanagawa 213-0012 (Japan); Oshima, M. [Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2007-10-15

    We have grown InN films on MgAl{sub 2}O{sub 4}(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe{sub 2}O{sub 4}(111) substrates. It has been revealed that InN(0001) films grow on MgAl{sub 2}O{sub 4}(111) with an in-plane epitaxial relationship of InN[1 anti 100]//MgAl{sub 2}O{sub 4}[1 anti 10], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30 rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl{sub 2}O{sub 4} and those on (Mn,Zn)Fe{sub 2}O{sub 4} led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Hydrogen-Induced Buckling of Pd Films Deposited on Various Substrates

    KAUST Repository

    Vlček, Marián

    2015-07-01

    A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.

  13. Hydrogen-Induced Buckling of Pd Films Deposited on Various Substrates

    KAUST Repository

    Vlček, Mariá n; Luká č, František; Vlach, Martin; Prochá zka, Ivan; Wagner, Stefan; Uchida, Helmut; Pundt, Astrid; Gemma, Ryota; Čí žek, Jakub

    2015-01-01

    A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.

  14. Chemical bath deposition of indium sulphide thin films: preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Ennaoui, A.; Patil, P.S.; Giersig, M.; Diesner, K.; Muller, M.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1999-02-26

    Indium sulphide (In{sub 2}S{sub 3}) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In{sub 2}S{sub 3} thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (element of phase). The optical band gap of In{sub 2}S{sub 3} thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. (orig.) 27 refs.

  15. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    International Nuclear Information System (INIS)

    Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

    2010-01-01

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  16. Influence of the substrate on the morphological evolution of gold thin films during solid-state dewetting

    Energy Technology Data Exchange (ETDEWEB)

    Nsimama, Patrick D. [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany); Dar Es Salaam Institute of Technology, P.O. Box 2958, Dar Es Salaam (Tanzania, United Republic of); Herz, Andreas; Wang, Dong [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany); Schaaf, Peter, E-mail: peter.schaaf@tu-ilmenau.de [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany)

    2016-12-01

    Highlights: • Dewetting of thin gold films is faster on TiO{sub 2} than on SiO{sub 2}. • Dewetting of thin gold films is faster on amorphous TiO{sub 2} than on crystalline TiO{sub 2}. • The kinetics is attributed to the energy of adhesion. • The morphology of thin Au films deposited on TiO{sub 2} substrates is different to those deposited on SiO{sub 2} substrates. • The dewetting activation energy of Au films deposited on crystalline substrates was higher than the activation energy of Au nanofilms deposited on amorphous TiO{sub 2} substrates. - Abstract: The evolution of electron-beam evaporated Au thin films deposited on crystalline TiO{sub 2} (c-TiO{sub 2}) and amorphous TiO{sub 2} (a-TiO{sub 2}) as well as amorphous SiO{sub 2} substrates are investigated. The kinetic of dewetting is clearly dependent on the type of substrate and is faster on TiO{sub 2} substrates than on SiO{sub 2} substrates. This difference can result from the difference in adhesion energy. Furthermore, the kinetic of dewetting is faster on a-TiO{sub 2} than on c-TiO{sub 2}, possibly due to the crystallization of TiO{sub 2} during annealing induced dewetting process. The morphologies of dewetted Au films deposited on crystalline TiO{sub 2} are characterized by branched holes. The XRD patterns of the Au films deposited on TiO{sub 2} substrates constituted peaks from both metallic Au and anatase TiO{sub 2}. The activation energy of Au films deposited on crystalline TiO{sub 2} substrates was higher than that that of the films deposited on amorphous TiO{sub 2} substrates.

  17. On indentation and scratching of thin films on hard substrates

    International Nuclear Information System (INIS)

    Larsson, Per-Lennart; Wredenberg, Fredrik

    2008-01-01

    Indentation and scratching of thin film/substrate structures, using sharp conical indenters, are studied theoretically and numerically and discussed in particular with material characterization in mind. For simplicity, but not out of necessity, the material behaviour is described by classical elastoplasticity accounting for large deformations. Explicit material parameters are chosen in order to arrive at representative results as regards material behaviour and indenter geometry. The main efforts are devoted towards an understanding of the influence from the film/substrate boundary on global indentation (scratching) properties at different material combinations. Global quantities to be investigated include indentation and scratching hardness, contact area and apparent coefficient of friction at scratching. A comparison of the mechanical behaviour at normal indentation and at scratching is also included. In addition, the behaviour of different field variables is studied and in this case the discussion is focused on fracture initiation governed by a critical stress criterion. The numerical investigation is performed using the finite element method and the numerical strategy is discussed in some detail. Throughout the analysis it is assumed that the substrate is considerably harder than the indented film and consequently the deformation of the substrate is neglected

  18. Deposition of DLC Film on Stainless Steel Substrates Coated by Nickel Using PECVD Method.

    Science.gov (United States)

    Khalaj, Zahra; Ghoranneviss, Mahmood; Vaghri, Elnaz; Saghaleini, Amir; Diudea, Mircea V

    2012-06-01

    Research on diamond-like carbon (DLC) films has been devoted to find both optimized conditions and characteristics of the deposited films on various substrates. In the present work, we investigate the quality of the DLC films grown on stainless steel substrates using different thickness of the nickel nanoparticle layers on the surface. Nickel nanoparticles were sputtered on the stainless steel substrates at 200 °C by a DC-sputtering system to make a good adherence between DLC coating and steel substrates. Atomic Force Microscopy was used to characterize the surface roughness and distribution function of the nickel nanoparticles on the substrate surface. Diamond like carbon films were deposited on stainless steel substrates coated by nickel using pure acetylene and C2H2/H2 with 15% flow ratio by DC-Plasma Enhanced Chemical Vapor Deposition (PECVD) systems. Microstructural analysis by Raman spectroscopy showed a low intensity ratio ID/IG for DLC films by increasing the Ni layer thickness on the stainless steel substrates. Fourier Transforms Infrared spectroscopy (FTIR) evidenced the peaks attributed to C-H bending and stretching vibration modes in the range of 1300-1700 cm-1 and 2700-3100 cm-1, respectively, in good agreement with the Raman spectroscopy and confirmed the DLC growth in all samples.

  19. Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

    Science.gov (United States)

    Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

    2015-09-01

    We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

  20. Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

    2011-08-31

    The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

  1. Characterizations of biodegradable epoxy-coated cellulose nanofibrils (CNF) thin film for flexible microwave applications

    Science.gov (United States)

    Hongyi Mi; Chien-Hao Liu; Tzu-Husan Chang; Jung-Hun Seo; Huilong Zhang; Sang June Cho; Nader Behdad; Zhenqiang Ma; Chunhua Yao; Zhiyong Cai; Shaoqin Gong

    2016-01-01

    Wood pulp cellulose nanofibrils (CNF) thin film is a novel recyclable and biodegradable material. We investigated the microwave dielectric properties of the epoxy coated-CNF thin film for potential broad applications in flexible high speed electronics. The characterizations of dielectric properties were carried out in a frequency range of 1–10 GHz. The dielectric...

  2. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Jun [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of); Lee, Ho Seok [Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Noh, Jin-Seo, E-mail: jinseonoh@gachon.ac.kr [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of)

    2016-03-31

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  3. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Kim, Yong Jun; Lee, Ho Seok; Noh, Jin-Seo

    2016-01-01

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  4. How metal films de-wet substrates-identifying the kinetic pathways and energetic driving forces

    International Nuclear Information System (INIS)

    McCarty, Kevin F; Hamilton, John C; Thuermer, Konrad; Jones, Frank; Talin, A Alec; Bartelt, Norman C; Sato, Yu; K Schmid, Andreas; Saa, Angela; Figuera, Juan de la; Stumpf, Roland

    2009-01-01

    We study how single-crystal chromium films of uniform thickness on W(110) substrates are converted to arrays of three-dimensional (3D) Cr islands during annealing. We use low-energy electron microscopy (LEEM) to directly observe a kinetic pathway that produces trenches that expose the wetting layer. Adjacent film steps move simultaneously uphill and downhill relative to the staircase of atomic steps on the substrate. This step motion thickens the film regions where steps advance. Where film steps retract, the film thins, eventually exposing the stable wetting layer. Since our analysis shows that thick Cr films have a lattice constant close to bulk Cr, we propose that surface and interface stress provide a possible driving force for the observed morphological instability. Atomistic simulations and analytic elastic models show that surface and interface stress can cause a dependence of film energy on thickness that leads to an instability to simultaneous thinning and thickening. We observe that de-wetting is also initiated at bunches of substrate steps in two other systems, Ag/W(110) and Ag/Ru(0001). We additionally describe how Cr films are converted into patterns of unidirectional stripes as the trenches that expose the wetting layer lengthen along the W[001] direction. Finally, we observe how 3D Cr islands form directly during film growth at elevated temperature. The Cr mesas (wedges) form as Cr film steps advance down the staircase of substrate steps, another example of the critical role that substrate steps play in 3D island formation.

  5. Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures

    Institute of Scientific and Technical Information of China (English)

    LI Ling; WANG Chuanbin; WANG Fang; SHEN Qiang; ZHANG Lianmeng

    2011-01-01

    MgO thin films were deposited on Si(100) substrates by laser ablation under various substrate temperatures (Tsub),expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from (200) to (111).The crystallinity and surface morphology was different too,depending on Tsub·At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.

  6. Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

    Science.gov (United States)

    Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

    2017-11-01

    Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

  7. Development of a templated approach to fabricate diamond patterns on various substrates.

    Science.gov (United States)

    Shimoni, Olga; Cervenka, Jiri; Karle, Timothy J; Fox, Kate; Gibson, Brant C; Tomljenovic-Hanic, Snjezana; Greentree, Andrew D; Prawer, Steven

    2014-06-11

    We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.

  8. Superconducting microwave electronics at Lewis Research Center

    Science.gov (United States)

    Warner, Joseph D.; Bhasin, Kul B.; Leonard, Regis F.

    Over the last three years, NASA Lewis Research Center has investigated the application of newly discovered high temperature superconductors to microwave electronics. Using thin films of YBa2Cu3O7-delta and Tl2Ca2Ba2Cu3Ox deposited on a variety of substrates, including strontium titanate, lanthanum gallate, lanthanum aluminate and magnesium oxide, a number of microwave circuits have been fabricated and evaluated. These include a cavity resonator at 60 GHz, microstrip resonators at 35 GHz, a superconducting antenna array at 35 GHz, a dielectric resonator at 9 GHz, and a microstrip filter at 5 GHz. Performance of some of these circuits as well as suggestions for other applications are reported.

  9. Superconducting Microwave Electronics at Lewis Research Center

    Science.gov (United States)

    Warner, Joseph D.; Bhasin, Kul B.; Leonard, Regis F.

    1991-01-01

    Over the last three years, NASA Lewis Research Center has investigated the application of newly discovered high temperature superconductors to microwave electronics. Using thin films of YBa2Cu3O7-delta and Tl2Ca2Ba2Cu3Ox deposited on a variety of substrates, including strontium titanate, lanthanum gallate, lanthanum aluminate and magnesium oxide, a number of microwave circuits have been fabricated and evaluated. These include a cavity resonator at 60 GHz, microstrip resonators at 35 GHz, a superconducting antenna array at 35 GHz, a dielectric resonator at 9 GHz, and a microstrip filter at 5 GHz. Performance of some of these circuits as well as suggestions for other applications are reported.

  10. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenzhi, E-mail: zhangwz@xatu.edu.cn [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Hu, Chenglong [Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, School of Chemistry and Environmental Engineering, Jianghan University, Wuhan 430056 (China)

    2016-03-30

    Graphical abstract: A chemical bonding approach was proposed to prepare the PANI film covalently bonded to ITO substrate and the film exhibited high electrochemical activities and stability compared with that obtained by conventional film-forming approach. - Highlights: • The PANI film covalently bonded to ITO substrate was prepared using ABPA as modifier. • The oxidative potentials of the obtained PANI film were decreased. • The obtained PANI film exhibits high electrochemical activities and stability. - Abstract: Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV–vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C{sub 4}H{sub 9}){sub 4}N{sup +} under the positive and negative potentials as comparison with the small Li{sup +} ion.

  11. Thin film pc-Si by aluminium induced crystallization on metallic substrate

    Directory of Open Access Journals (Sweden)

    Cayron C.

    2013-04-01

    Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

  12. Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

    International Nuclear Information System (INIS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

    2008-01-01

    Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

  13. Microstructure of epitaxial SrRuO 3 thin films on MgO substrates

    Science.gov (United States)

    Ai, Wan Yong; Zhu, Jun; Zhang, Ying; Li, Yan Rong; Liu, Xing Zhao; Wei, Xian Hua; Li, Jin Long; Zheng, Liang; Qin, Wen Feng; Liang, Zhu

    2006-09-01

    SrRuO 3 thin films have been grown on singular (1 0 0) MgO substrates using pulsed laser deposition (PLD) in 30 Pa oxygen ambient and at a temperature of 400-700 °C. Ex situ reflection high-energy electron diffraction (RHEED) as well as X-ray diffraction (XRD) θ/2 θ scan indicated that the films deposited above 650 °C were well crystallized though they had a rough surface as shown by atom force microscopy (AFM). XRD Φ scans revealed that these films were composed of all three different types of orientation domains, which was further confirmed by the RHEED patterns. The heteroepitaxial relationship between SrRuO 3 and MgO was found to be [1 1 0] SRO//[1 0 0] MgO and 45°-rotated cube-on-cube [0 0 1] SRO//[1 0 0] MgO. These domain structures and surface morphology are similar to that of ever-reported SrRuO 3 thin films deposited on the (0 0 1) LaAlO 3 substrates, and different from those deposited on (0 0 1) SrTiO 3 substrates that have an atomically flat surface and are composed of only the [1 1 0]-type domains. The reason for this difference was ascribed to the effect of lattice mismatch across the film/substrate interface. The room temperature resistivity of SrRuO 3 films fabricated at 700 °C was 300 μΩ cm. Therefore, epitaxial SrRuO 3 films on MgO substrate could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.

  14. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM. PART II: STRENGTH AND DURABILITY OF LAP JOINTS

    Science.gov (United States)

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 A in thickness) were deposited onto 6111-T4 aluminum substrates in radio frequency and microwave powered reactors and used as primers for structural adhesive bonding. Processing variables such as substrate pre-treatment,...

  15. Effects of the substrate temperature on the properties of CuIn5S8 thin films

    International Nuclear Information System (INIS)

    Gannouni, M.; Kanzari, M.

    2011-01-01

    Structural, optical and electrical properties of CuIn 5 S 8 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn 5 S 8 thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10 5 cm -1 at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn 5 S 8 thin film is an n-type semiconductor at 250 deg. C.

  16. MgTiO3 filled PTFE composites for microwave substrate applications

    International Nuclear Information System (INIS)

    Yuan, Y.; Zhang, S.R.; Zhou, X.H.; Li, E.Z.

    2013-01-01

    MgTiO 3 filled PTFE composite substrates were fabricated for microwave circuit applications. The filler content in the PTFE matrix was varied from 30 to 70 wt%. Low loss MgTiO 3 ceramic powder was prepared by the solid state ceramic route. The phase formation of MgTiO 3 was studied by powder X-ray diffraction analysis. Morphology of the composites and dispersion of filler in the PTFE matrix was studied using scanning electron microscopy. Microwave dielectric properties of the composites with respect to filler loading were measured by stripline resonator method using Vector Network Analyzer. Different theoretical modeling approaches were used to predict the dielectric constant of PTFE ceramic composites with respect to filler loading. The linear coefficient of thermal expansion of the composites was investigated. Moisture absorption of the composites was found out conforming to IPC-TM-650 2.6.2. - Highlights: • We prepare MT/PTFE composite by cold pressing and hot treating. • Increasing MT will increase ε r , tan δ and moisture absorption. • Increasing MT will decrease thermal expansion coefficient. • MT/PTFE composite has an ε r of 4.3 and a tan δ of 0.00097 at 50 wt% filler loading. • MT/PTFE composite are promising candidates for microwave circuit applications

  17. Detecting stray microwaves and nonequilibrium quasiparticles in thin films by single-electron tunneling

    Science.gov (United States)

    Saira, Olli-Pentti; Maisi, Ville; Kemppinen, Antti; Möttönen, Mikko; Pekola, Jukka

    2013-03-01

    Superconducting thin films and tunnel junctions are the building blocks of many state-of-the-art technologies related to quantum information processing, microwave detection, and electronic amplification. These devices operate at millikelvin temperatures, and - in a naive picture - their fidelity metrics are expected to improve as the temperature is lowered. However, very often one finds in the experiment that the device performance levels off around 100-150 mK. In my presentation, I will address three common physical mechanisms that can cause such saturation: stray microwaves, nonequilibrium quasiparticles, and sub-gap quasiparticle states. The new experimental data I will present is based on a series of studies on quasiparticle transport in Coulomb-blockaded normal-insulator-superconductor tunnel junction devices. We have used a capacitively coupled SET electrometer to detect individual quasiparticle tunneling events in real time. We demonstrate the following record-low values for thin film aluminum: quasiparticle density nqp < 0 . 033 / μm3 , normalized density of sub-gap quasiparticle states (Dynes parameter) γ < 1 . 6 ×10-7 . I will also discuss some sample stage and chip designs that improve microwave shielding.

  18. Load transfer of nanocomposite film on aluminum substrate.

    Science.gov (United States)

    Her, Shiuh-Chuan; Chien, Pao-Chu

    2018-01-01

    Nanocomposite films have attracted much attention in recent years. Depending on the composition of the film and fabrication method, a large range of applications has been employed for nanocomposite films. In this study, nanocomposite films reinforced with multi-walled carbon nanotubes (MWCNTs) were deposited on the aluminum substrate through hot press processing. A shear lag model and Euler beam theory were employed to evaluate the stress distribution and load carrying capability of the nanocomposite film subjected to tensile load and bending moment. The influence of MWCNT on the Young's modulus and load carrying capability of the nanocomposite film was investigated through a parametric study. The theoretical predictions were verified by comparison with experimental tests. A close agreement with difference less than 6% was achieved between the theoretical prediction and experimental measurements. The Young's modulus and load transfer of the nanocomposite film reinforced with MWCNTs increases with the increase of the MWCNT loading. Compared to the neat epoxy film, nanocomposite film with 1 wt % of MWCNT exhibits an increase of 20% in both the Young's modulus and load carrying capability.

  19. Releasing of Sputtered Au Film by Dissolving Sacrificial Layer and Its Self-Standing on Perforated Substrate

    Science.gov (United States)

    Miyamoto, Yu; Fujii, Yuma; Yamano, Masafumi; Harigai, Toru; Suda, Yoshiyuki; Takikawa, Hirofumi; Nishiuchi, Mamiko; Sakaki, Hironao; Kondo, Kiminori

    2015-09-01

    Free-standing thin films such as diamond-like carbon (DLC) and gold (Au) have been attracted increasing interests as film targets used in the laser-driven ion acceleration experiment. One of the methods to make the free-standing thin film is to use a soluble sacrifice layer. In this study, the fabrication technique of self-standing Au thin film is presented. Gelatin, oblate, silk fibroin, and NaCl were examined as a. Au thin films were deposited by DC plasma sputtering on sacrifice layers. The gelatin and oblate were used as the sacrificial layer and the supporting substrate. Silk fibroin was coated on glass substrates by a spin coater. The NaCl sacrificial layers were deposited on flat Si substrates by the vacuum vapor deposition system. Sputtered Au thin films were released by immersing the substrates in purified water. Self-standing Au thin films were fabricated by scooping up the released Au thin film on a perforated substrate. The highest quality of the self-standing Au thin film was achieved by using NaCl sacrificial layer. This work was supported by JSPS KAKENHI Grant-in-Aid for Scientific Research and Toukai Foundation for Technology.

  20. Microwave absorptions of ultrathin conductive films and designs of frequency-independent ultrathin absorbers

    International Nuclear Information System (INIS)

    Li, Sucheng; Anwar, Shahzad; Lu, Weixin; Hang, Zhi Hong; Hou, Bo; Shen, Mingrong; Wang, Chin-Hua

    2014-01-01

    We study the absorption properties of ultrathin conductive films in the microwave regime, and find a moderate absorption effect which gives rise to maximal absorbance 50% if the sheet (square) resistance of the film meets an impedance matching condition. The maximal absorption exhibits a frequency-independent feature and takes place on an extremely subwavelength scale, the film thickness. As a realistic instance, ∼5 nm thick Au film is predicted to achieve the optimal absorption. In addition, a methodology based on metallic mesh structure is proposed to design the frequency-independent ultrathin absorbers. We perform a design of such absorbers with 50% absorption, which is verified by numerical simulations

  1. Effects of disorder on the microwave properties of MgB2 polycrystalline films

    International Nuclear Information System (INIS)

    Ghigo, G.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Mezzetti, E.; Ummarino, G. A.

    2006-01-01

    The role of disorder in superconducting magnesium diboride (MgB 2 ) policrystalline films is investigated in the high frequency range by a coplanar microwave resonator technique. Two sources of disorder are considered, heavy-ion irradiation damage and sample ageing. Microwave measurements are analyzed in the framework of the two-gap model with strong interband scattering contribution. It turns out that disorder enhancement increases the interband scattering rate, resulting in a reduction of the surface resistance at low temperatures, due to a slight increase of the π gap. Moreover, increasing disorder at grain boundaries induces a nonmonotonic residual surface resistance, showing the features of a resistive behavior for the highest disorder level. Finally, the effects of the different kinds of disorder on the intrinsic and on the grain-boundary properties of the MgB 2 films are compared and discussed

  2. Effects of bias voltage on the properties of ITO films prepared on polymer substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lim, Donggun; Yang, Keajoon; Song, Woochang; Yi, Junsin

    2005-01-01

    The ITO (indium tin oxide) thin films were deposited on acryl, glass, PET, and poly-carbonate substrates by DC reactive magnetron sputtering. The bias voltage was changed from -20 to -80 V. As the bias voltage increased, the deposition rate of ITO films decreased regardless of substrate types. The roughness of the films on PET increased with the bias voltage. The study demonstrated that the bias improved the electrical and optical properties of ITO films regardless of substrate types. The lowest electrical resistivity of 5.5x10 -4 no. OMEGAno. -cm and visible transmittance of about 80% were achieved by applying a negative bias of -60 V

  3. Effect of deposition rate on melting point of copper film catalyst substrate at atomic scale

    Science.gov (United States)

    Marimpul, Rinaldo; Syuhada, Ibnu; Rosikhin, Ahmad; Winata, Toto

    2018-03-01

    Annealing process of copper film catalyst substrate was studied by molcular dynamics simulation. This copper film catalyst substrate was produced using thermal evaporation method. The annealing process was limited in nanosecond order to observe the mechanism at atomic scale. We found that deposition rate parameter affected the melting point of catalyst substrate. The change of crystalline structure of copper atoms was observed before it had been already at melting point. The optimum annealing temperature was obtained to get the highest percentage of fcc structure on copper film catalyst substrate.

  4. Microwave characteristics of sol-gel based Ag-doped (Ba{sub 0.6}Sr{sub 0.4})TiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyoung-Tae; Kim, Cheolbok [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Senior, David E. [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Department of Electrical and Electronic Engineering, Universidad Tecnológica de Bolívar Cartagena, 130011 Colombia (Colombia); Kim, Dongsu [Packaging Research Center, Korea Electronics Technology Institute, Gyeonggi-do, 463-816 (Korea, Republic of); Yoon, Yong-Kyu, E-mail: ykyoon@ece.ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States)

    2014-08-28

    Dielectric Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films with a different concentration of Ag-dopant of 0.5, 1, 1.5, 2, 3, and 5 mol % have been prepared using an alkoxide-based sol-gel method on a Pt(111)/TiO{sub 2}/SiO{sub 2}/Si substrate and their surface morphology and crystallinity have been examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis, respectively. An on-chip metal-insulator-metal capacitor has been fabricated with the prepared thin film ferroelectric sample. Concentric coplanar electrodes are used for high frequency electrical characterization with a vector network analyzer and a probe station. The SEM images show that increasing Ag doping concentration leads to a decrease in grain size. XRD reveals that the fabricated films show good BST crystallinity for all the concentration while a doping concentration of 5 mol % starts to show an Ag peak, implying a metallic phase. Improved microwave dielectric loss properties of the BST thin films are observed in a low Ag doping level. Especially, BST with an Ag doping concentration of 1 mol % shows the best properties with a dielectric constant of 269.3, a quality factor of 48.1, a tunability at the electric field of 100 kV/cm of 41.2 %, a leakage-current density of 1.045 × 10{sup −7}A/cm{sup 2} at an electric field of 100 kV/cm and a figure of merit (defined by tunability (%) divided by tan δ (%)) of 19.59 under a dc bias voltage of 10 V at 1 GHz. - Highlights: • High quality Ag-doped Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films were derived by the sol-gel method. • Doped Ag replaced the A site ions in the ABO{sub 3} type structure. • Doped Ag helped lower leakage current by filling oxygen vacancies, which is a leakage path. • Microwave characteristics of low dielectric loss and good tunability were confirmed. • Great potential is envisioned for low loss tunable microwave applications.

  5. Fabrication of cuprous chloride films on copper substrate by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yu-Ting; Ci, Ji-Wei; Tu, Wei-Chen [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Lan, Shan-Ming [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Shen, Chin-Chang; Wu, Chih-Hung [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China)

    2015-09-30

    Polycrystalline CuCl films were fabricated by chemical bath deposition (CBD) on a Cu substrate at a low solution temperature of 90 °C. Continuous CuCl films were prepared using the copper (II) chloride (CuCl{sub 2}) compound as the precursor for both the Cu{sup 2+} and Cl{sup −} sources, together with repeated HCl dip treatments. An HCl dip pretreatment of the substrate favored the nucleation of CuCl crystallites. Further, interrupting the film deposition and including an HCl dip treatment of the film growth surface facilitated the deposition of a full-coverage CuCl film. A dual beam (FIB/SEM) system with energy dispersive spectrometry facilities attached revealed a homogeneous CuCl layer with a flat-top surface and an average thickness of about 1 μm. Both the excitonic and biexcitonic emission lines were well-resolved in the 6.4 K photoluminescence spectra. In particular, the free exciton emission line was observable at room temperature, indicating the good quality of the CuCl films prepared by CBD. - Highlights: • Cuprous chloride (CuCl) was prepared on Cu substrate by chemical bath deposition. • HCl dip treatments facilitated the deposition of a full-coverage CuCl film. • A homogeneous elemental distribution was recognized for the deposited CuCl layer. • Excitonic and biexcitonic photoluminescence lines of CuCl films were well-resolved. • The free exciton emission line of CuCl films was observable at room temperature.

  6. Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

    Directory of Open Access Journals (Sweden)

    Yaodong Yang

    2010-01-01

    Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

  7. Comment on ``Ferromagnetic film on a superconducting substrate''

    Science.gov (United States)

    Sonin, E. B.

    2002-10-01

    A superconducting substrate is not able to shrink drastically domains in a ferromagnetic film, contrary to the prediction of Bulaevskii and Chudnovsky. This is shown on the basis of the exact solution for the stripe domain structure.

  8. Annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Alves, M. J. P.; Gonzalez-Chavez, D. E.; Sommer, R. L. [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, Urca, 22290-180 Rio de Janeiro, RJ (Brazil); Bohn, F. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

    2015-03-28

    We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.

  9. Combined Brillouin light scattering and microwave absorption study of magnon-photon coupling in a split-ring resonator/YIG film system

    Energy Technology Data Exchange (ETDEWEB)

    Klingler, S., E-mail: stefan.klingler@wmi.badw.de; Maier-Flaig, H.; Weiler, M. [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Straße 8, 85748 Garching (Germany); Physik-Department, Technische Universität München, 85748 Garching (Germany); Gross, R.; Huebl, H.; Goennenwein, S. T. B. [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Straße 8, 85748 Garching (Germany); Physik-Department, Technische Universität München, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), 80799 Munich (Germany); Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T2N2 (Canada)

    2016-08-15

    Microfocused Brillouin light scattering (BLS) and microwave absorption (MA) are used to study magnon-photon coupling in a system consisting of a split-ring microwave resonator and an yttrium iron garnet (YIG) film. The split-ring resonator is defined by optical lithography and loaded with a 1 μm-thick YIG film grown by liquid phase epitaxy. BLS and MA spectra of the hybrid system are simultaneously recorded as a function of the applied magnetic field magnitude and microwave excitation frequency. Strong coupling of the magnon and microwave resonator modes is found with a coupling strength of g{sub eff} /2π = 63 MHz. The combined BLS and MA data allow us to study the continuous transition of the hybridized modes from a purely magnonic to a purely photonic mode by varying the applied magnetic field and microwave frequency. Furthermore, the BLS data represent an up-conversion of the microwave frequency coupling to optical frequencies.

  10. Fabrication and Corrosion Resistance of Superhydrophobic Hydroxide Zinc Carbonate Film on Aluminum Substrates

    Directory of Open Access Journals (Sweden)

    Jin Liang

    2013-01-01

    Full Text Available Superhydrophobic hydroxide zinc carbonate (HZC films were fabricated on aluminum substrate through a convenient in situ deposition process. Firstly, HZC films with different morphologies were deposited on aluminum substrates through immersing the aluminum substrates perpendicularly into aqueous solution containing zinc nitrate hexahydrate and urea. Secondly, the films were then modified with fluoroalkylsilane (FAS: CH3(CF26(CH23Si(OCH33 molecules by immersing in absolute ethanol solution containing FAS. The morphologies, hydrophobicity, chemical compositions, and bonding states of the films were analyzed by scanning electron microscopy (SEM, water contact angle measurement (CA, Fourier transform infrared spectrometer (FTIR, and X-ray photoelectron spectroscopy (XPS, respectively. It was shown by surface morphological observation that HZC films displayed different microstructures such as microporous structure, rose petal-like structure, block-shaped structure, and pinecone-like structure by altering the deposition condition. A highest water contact angle of 156.2° was obtained after FAS modification. Moreover, the corrosion resistance of the superhydrophobic surface on aluminum substrate was investigated using electrochemical impedance spectroscopy (EIS measurements. The EIS measurements’ results revealed that the superhydrophobic surface considerably improved the corrosion resistance of aluminum.

  11. Investigation of rectenna for microwave power conversion

    International Nuclear Information System (INIS)

    Karimov, Kh S; Saleem, M; Shah, M; Shafique, S

    2010-01-01

    This paper presents the fabrication of organic semiconductor (OS) rectifiers and an investigation of rectifying antenna (rectenna) under the effect of microwave power. As a source of microwaves, a patch antenna fed by a generator was used. The rectenna contains a built-in rectifier. The surface-type Ag/NiPc/Au cell, with organic semiconductor nickel phthalocyanine (NiPc) as the active material, was used as a rectenna. The rectifier was fabricated by thermal deposition of Ag, Au and NiPc thin films on thoroughly cleaned glass substrate. The measured I–V characteristics of the cell showed rectifying behavior. The rectenna was tested at frequency ranges of 8–16 GHz at different intensities of radiation and vertical and horizontal positions of the rectenna's axes. Under the effect of microwave power at the output of the rectenna, the output dc voltage and current were detected

  12. Growth of Ba-hexaferrite films on single crystal 6-H SiC

    International Nuclear Information System (INIS)

    Chen Zhoahui; Yang, Aria; Yoon, S.D.; Ziemer, Katherine; Vittoria, Carmine; Harris, V.G.

    2006-01-01

    Barium hexaferrite films have been processed by pulsed laser deposition on single crystal 6-H silicon carbide substrates. Atomic force microscopy images show hexagonal crystals (∼0.5μm in diameter) oriented with the c-axis perpendicular to the film plane. X-ray θ-2θ diffraction measurements indicate a strong (0,0,2n) alignment of crystallites. The magnetization for low-pressure deposition (20mTorr) is comparable to bulk values (4πM s ∼4320G). The loop squareness, important for self-bias microwave device applications, increases with oxygen pressure reaching a maximum value of 70%. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of μ-wave and mm-wave monolithic integrated circuits. c integrated circuits

  13. Structural Transformation upon Nitrogen Doping of Ultrananocrystalline Diamond Films by Microwave Plasma CVD

    Directory of Open Access Journals (Sweden)

    Chien-Chung Teng

    2009-01-01

    Full Text Available The molecular properties and surface morphology of undoped and N-doped ultra-nanocrystalline diamond (UNCD films deposited by microwave plasma CVD with addition of nitrogen are investigated with various spectroscopic techniques. The results of spatially resolved Raman scattering, ATR/FT-IR and XPS spectra show more amorphous and sp2/sp3 ratio characteristics in N-doped UNCD films. The surface morphology in AFM scans shows larger nanocrystalline diamond clusters in N-doped UNCD films. Incorporation of nitrogen into UNCD films has promoted an increase of amorphous sp2-bonded carbons in the grain boundaries and the size of nanocrystalline diamond grains that are well correlated to the reported enhancement of conductivity and structural changes of UNCD films.

  14. High-Tc film development for electronic applications

    International Nuclear Information System (INIS)

    Talvacchio, J.; Wagner, G.R.

    1990-01-01

    In this paper, the authors describe the requirements and status of high-T c superconductor (HTS) films for the development of electronic applications with an emphasis on passive microwave devices. One of the most general requirements, a low rf Surface resistance relative to Cu, has been achieved in films of several different HTS compounds. However the best films, made of YBa 2 Cu 3 O 7 (YBCO) by any one of several techniques, have in common a residual surface resistance that is much greater than predicted by conventional superconductivity theory. Improvement in films is also limited by the current size and selection of single-crystal substrate materials. Other issues that must be resolved to develop a full integrated circuit technology for HTS are substrate heating during film deposition, deposited epitaxial insulators, and determination of which interfaces in a multilevel circuit must be formed in situ

  15. Fabrication of micropillar substrates using replicas of alpha-particle irradiated and chemically etched PADC films

    International Nuclear Information System (INIS)

    Ng, C.K.M.; Chong, E.Y.W.; Roy, V.A.L.; Cheung, K.M.C.; Yeung, K.W.K.; Yu, K.N.

    2012-01-01

    We proposed a simple method to fabricate micropillar substrates. Polyallyldiglycol carbonate (PADC) films were irradiated by alpha particles and then chemically etched to form a cast with micron-scale spherical pores. A polydimethylsiloxane (PDMS) replica of this PADC film gave a micropillar substrate with micron-scale spherical pillars. HeLa cells cultured on such a micropillar substrate had significantly larger percentage of cells entering S-phase, attached cell numbers and cell spreading areas. - Highlights: ► We proposed a simple method to fabricate micropillar substrates. ► Polyallyldiglycol carbonate films were irradiated and etched to form casts. ► Polydimethylsiloxane replica then formed the micropillar substrates. ► Attachment and proliferation of HeLa cells were enhanced on these substrates.

  16. Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

    International Nuclear Information System (INIS)

    Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

    2006-01-01

    The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

  17. Thin-film X-ray filters on microstructured substrates and their thermophysical properties

    Science.gov (United States)

    Mitrofanov, A. V.

    2018-02-01

    It is shown that structured substrates having micron- or submicron-sized through holes and coated with an ultrathin organic film can be used for the fabrication of thin-film X-ray filters via direct growth of functional layers on a substrate by sputter deposition, without additional complex processing steps. An optimised process is considered for the fabrication of X-ray filters on support structures in the form of electroplated fine nickel grids and on track-etched polymer membranes with micron- and submicrondiameter through pores. 'Optimisation' is here taken to mean matching the sputter deposition conditions with the properties of substrates so as to avoid overheating. The filters in question are intended for both imaging and single-channel detectors operating in the soft X-ray and vacuum UV spectral regions, at wavelengths from 10 to 60 nm. Thermal calculations are presented for the heating of ultrathin layers of organic films and thin-film support substrates during the sputter deposition of aluminium or other functional materials. The paper discusses approaches for cooling thinfilm composites during the sputter deposition process and the service of the filters in experiments and gives a brief overview of the works that utilised filters produced by the described technique on microstructured substrates, including orbital solar X-ray research in the framework of the CORONAS programme and laboratory laser plasma experiments.

  18. Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

    International Nuclear Information System (INIS)

    Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    FeCo epitaxial films were prepared on MgO(111), SrTiO 3 (111), and Al 2 O 3 (0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110) bcc films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO 3 and Al 2 O 3 substrates include FeCo(111) bcc crystal in addition to the FeCo(110) bcc crystals with NW and KS relationships. The FeCo(111) bcc crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110) bcc and FeCo(111) bcc crystals formed on the insulating substrates are in agreement with those of the bulk Fe 50 Co 50 (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

  19. Enhancing and quenching luminescence with gold nanoparticle films: the influence of substrate on the luminescent properties

    International Nuclear Information System (INIS)

    Guidelli, Eder José; Baffa, Oswaldo; Ramos, Ana Paula

    2016-01-01

    Gold nanoparticle (AuNP) films were sputtered over glass and aluminum substrates to enhance optically stimulated luminescence (OSL), a luminescent technique employed for radiation detection, from x-ray irradiated NaCl nanocrystals. The AuNP films deposited over glass led to enhanced-OSL emission, whereas the AuNP films deposited on aluminum substrates quenched the OSL emission. The enhanced-OSL intensity is proportional to the optical density of the film's plasmon resonance band at the stimulation wavelength. For the case of the AuNP/aluminum films, the luminescence quenching diminishes, and OSL intensity partially recovers upon increasing the distance between the AuNPs and the aluminum substrates, and between the luminescent nanocrystals and the AuNP films. These results suggest that plasmonic interactions between the emitter nanocrystals, the localized surface plasmons (LSP) of the AuNPs, and the substrate are responsible for the OSL enhancement and quenching. In this sense, the substrate dictates whether LSP relaxation occurs by radiative or non-radiative transisitions, leading to enhanced or quenched OSL, respectively. Therefore, besides showing that AuNP films can enhance and/or tune the sensitivity of luminescent radiation detectors, and demonstrating OSL as a new technique to investigate mechanisms of plasmon-enhanced luminescence, these results bring insights on how substrates strongly modify the optical properties of AuNP films. (paper)

  20. Fabrication and magnetization measurement of Ni thin films on silicon substrate by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Tang Yang [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)], E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen; Zhang Jiying; Li Binghui; Lu Youming; Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2008-02-29

    Ni thin films were electrodeposited on n-Si (100) substrate from the electrolytes containing Ni(CH{sub 3}COO){sub 2} and CH{sub 3}COONH{sub 4} at room temperature. The scanning electron microscope images of the films reveals the uniform distribution of the nickel all over the substrate surface, which illustrates that the fine Ni films on large scales could be obtained through the method of electrodeposition. Vibrating sample magnetometer measurement with the applied field parallel to the surface shows obvious hysteresis loops of the magnetic thin films. The morphology and magnetism of the Ni thin films evolves with the deposition time increasing. The effect of deposition conditions on the properties of the Ni thin films is investigated.

  1. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    International Nuclear Information System (INIS)

    Tseng, Kun-San; Lo, Yu-Lung

    2013-01-01

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target–substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target–substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target–substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target–substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target–substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  2. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    Science.gov (United States)

    Tseng, Kun-San; Lo, Yu-Lung

    2013-11-01

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target-substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target-substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target-substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target-substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target-substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  3. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Kun-San [Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan (China); Lo, Yu-Lung, E-mail: loyl@mail.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China)

    2013-11-15

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target–substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target–substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target–substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target–substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target–substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  4. Thin NiTi Films Deposited on Graphene Substrates

    Science.gov (United States)

    Hahn, S.; Schulze, A.; Böhme, M.; Hahn, T.; Wagner, M. F.-X.

    2017-03-01

    We present experimental results on the deposition of Nickel Titanium (NiTi) films on graphene substrates using a PVD magnetron sputter process. Characterization of the 2-4 micron thick NiTi films by electron microscopy, electron backscatter diffraction, and transmission electron microscopy shows that grain size and orientation of the thin NiTi films strongly depend on the type of combination of graphene and copper layers below. Our experimental findings are supported by density functional theory calculations: a theoretical estimation of the binding energies of different NiTi-graphene interfaces is in line with the experimentally determined microstructural features of the functional NiTi top layer.

  5. Carbon nanotube network thin-film transistors on flexible/stretchable substrates

    Science.gov (United States)

    Takei, Kuniharu; Takahashi, Toshitake; Javey, Ali

    2016-03-29

    This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

  6. Separation of stress-free AlN/SiC thin films from Si substrate

    International Nuclear Information System (INIS)

    Redkov, A V; Osipov, A V; Mukhin, I S; Kukushkin, S A

    2016-01-01

    We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent. (paper)

  7. Annealing impact on the structural and photoluminescence properties of ZnO thin films on Ag substrates

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Lai, Min; Pei, Shixin

    2014-01-01

    Graphical abstract: The Gaussian fitting indicates that the PL spectra of the ZnO thin films include four emission peaks which are centered at 380, 520, 570 and 610 nm, respectively. The ZnO thin film deposited on an Ag substrate shows a stronger green emission and a weaker UV emission than the ZnO thin film directly deposited on a Si substrate annealed at 400 °C. With the rise of annealing temperature, the visible emission intensity and wavelength are largely changed. Highlights: • ZnO thin films have been prepared on Ag substrates by sol–gel method. • The Ag substrates have a great effect on the photoluminescence of ZnO thin films. • All the films exhibit three visible emission bands including green, yellow and red. • Annealing causes a large change of the visible emission intensity and wavelength. -- Abstract: In this work, ZnO thin films were prepared by sol–gel method on Ag substrates. The structural and optical properties of the films annealed at different temperatures were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence, respectively. The results of XRD showed that all the ZnO thin films had a wurtzite phase and were preferentially oriented along the c-axis direction. The sample annealed at 400 °C exhibited better crystalline quality than the ZnO thin film directly deposited on a Si substrate annealed at the same temperature. The photoluminescence spectra showed that ZnO thin films had an ultraviolet emission band and three visible emission bands including green, yellow and red band. The sample annealed at 400 °C exhibited a stronger green emission and a weaker ultraviolet emission compared with the ZnO thin film deposited on a Si substrate annealed at the same temperature. The difference of the luminescence properties was thought to be originated from different substrates. As for the ZnO films on Ag substrates, the increase of annealing temperature led to different changes of visible emissions

  8. Effect of substrate on texture and mechanical properties of Mg-Cu-Zn thin films

    Science.gov (United States)

    Eshaghi, F.; Zolanvari, A.

    2018-04-01

    In this work, thin films of Mg-Cu-Zn with 60 nm thicknesses have been deposited on the Si(100), Al, stainless steel, and Cu substrates using DC magnetron sputtering. FESEM images displayed uniformity of Mg-Cu-Zn particles on the different substrates. AFM micrograph revealed the roughness of thin film changes due to the different kinds of the substrates. XRD measurements showed the existence of strong Mg (002) reflections and weak Mg (101) peaks. Residual stress and adhesion force have been measured as the mechanical properties of the Mg-Cu-Zn thin films. The residual stresses of thin films which have been investigated by X-ray diffraction method revealed that the thin films sputtered on the Si and Cu substrates endure minimum and maximum stresses, respectively, during the deposition process. However, the force spectroscopy analysis indicated that the films grew on the Si and Cu experienced maximum and minimum adhesion force. The texture analysis has been done using XRD instrument to make pole figures of Mg (002) and Mg (101) reflections. ODFs have been calculated to evaluate the distribution of the orientations within the thin films. It was found that the texture and stress have an inverse relation, while the texture and the adhesion force of the Mg-Cu-Zn thin films have direct relation. A thin film that sustains the lowest residual stresses and highest adhesive force had the strongest {001} basal fiber texture.

  9. Substrate mediated growth of organic semiconducting thin films; Templateffekte bei der Strukturierung organischer Halbleiterfilme

    Energy Technology Data Exchange (ETDEWEB)

    Goetzen, Jan

    2010-09-17

    Since electronic properties of molecular materials are closely related to their structural order a precise control of the molecular packing and crystalline orientation of thin films is of vital interest for an optimization of organic electronic devices. Of particular interest in this respect is the initial stage of film formation which is largely governed by the interplay of intermolecular and molecule-substrate interactions. One approach to control the molecular film structure is based on substrate mediated growth. In this respect we have studied structural properties of thin films of pentacene, pentacene- 5,7,12,14-tetrone and perfluoro-pentacene which were grown onto various substrates including metals, metal oxides and graphite. On metal surfaces the molecules initially form a chemisorbed monolayer where molecules even can be uniformly aligned when using appropriate substrates with twofold symmetry. Further deposition, however, is accompanied by a pronounced dewetting and formation of disjoined islands which results from a large structural mismatch between the molecular arrangement in the monolayer and the crystalline phase. In some cases it is possible to orient such islands by utilizing step mediated nucleation and decoration of step bunches which allows the preparation of azimuthally well oriented elongated islands. On single crystalline oxides the growth parallels the situation found before for SiO{sub 2} where islands of upright oriented molecules are formed. The growth on graphite is somewhat particular since the lattice provides a natural template for acenes yielding epitaxially ordered monolayer films with planar adsorption geometry like in case of metals. Interestingly, however, no dewetting occurs upon further growth and instead rather smooth films are formed. The detailed analysis for the case of pentacene showed that the substrate-molecule interaction actually is weaker than the intermolecular interaction so that multilayer films can lift the

  10. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Ming [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China); Liu, Kun, E-mail: kliu@mail.neu.edu.cn [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China); Liu, Xinghua [Hubei Aerospace Industry Technology Academe Special Vehicle Technology Center, Wuhan (China); Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai [School of Mechanical Engineering and Automation, Northeastern University, 3-11 WenHua Rd., 319#, Shenyang, 110004 (China)

    2016-12-01

    Highlights: • ZAO thin films were deposited on PET substrate. • A set of experimental parameters were systematically investigated. • Change rule of film photoelectric properties was obtained. • ZAO films with optimal properties were obtained at our working conditions. - Abstract: Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  11. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    International Nuclear Information System (INIS)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-01-01

    Highlights: • ZAO thin films were deposited on PET substrate. • A set of experimental parameters were systematically investigated. • Change rule of film photoelectric properties was obtained. • ZAO films with optimal properties were obtained at our working conditions. - Abstract: Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  12. Atomic-scale epitaxial aluminum film on GaAs substrate

    Directory of Open Access Journals (Sweden)

    Yen-Ting Fan

    2017-07-01

    Full Text Available Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals.

  13. Fabrication of micropillar substrates using replicas of alpha-particle irradiated and chemically etched PADC films

    Energy Technology Data Exchange (ETDEWEB)

    Ng, C.K.M. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Chong, E.Y.W. [Department of Orthopaedics and Traumatology, University of Hong Kong (Hong Kong); Roy, V.A.L. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong); Cheung, K.M.C.; Yeung, K.W.K. [Department of Orthopaedics and Traumatology, University of Hong Kong (Hong Kong); Yu, K.N., E-mail: appetery@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong (Hong Kong)

    2012-07-15

    We proposed a simple method to fabricate micropillar substrates. Polyallyldiglycol carbonate (PADC) films were irradiated by alpha particles and then chemically etched to form a cast with micron-scale spherical pores. A polydimethylsiloxane (PDMS) replica of this PADC film gave a micropillar substrate with micron-scale spherical pillars. HeLa cells cultured on such a micropillar substrate had significantly larger percentage of cells entering S-phase, attached cell numbers and cell spreading areas. - Highlights: Black-Right-Pointing-Pointer We proposed a simple method to fabricate micropillar substrates. Black-Right-Pointing-Pointer Polyallyldiglycol carbonate films were irradiated and etched to form casts. Black-Right-Pointing-Pointer Polydimethylsiloxane replica then formed the micropillar substrates. Black-Right-Pointing-Pointer Attachment and proliferation of HeLa cells were enhanced on these substrates.

  14. Effects of flexible substrate thickness on Al-induced crystallization of amorphous Ge thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oya, Naoki [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Toko, Kaoru, E-mail: toko@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, Noriyuki; Yoshizawa, Noriko [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan); Suemasu, Takashi [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2015-05-29

    Amorphous germanium (a-Ge) thin films were directly crystallized on flexible plastic substrates at 325 °C using Al-induced crystallization. The thickness of the plastic substrate strongly influenced the crystal quality of the resulting polycrystalline Ge layers. Using a thicker substrate lowered the stress on the a-Ge layer during annealing, which increased the grain size and fraction of (111)-oriented grains within the Ge layer. Employing a 125-μm-thick substrate led to 95% (111)-oriented Ge with grains having an average size of 100 μm. Transmission electron microscopy demonstrated that the Ge grains had a low-defect density. Production of high-quality Ge films on plastic substrates allows for the possibility for developing Ge-based electronic and optical devices on inexpensive flexible substrates. - Highlights: • Polycrystalline Ge thin films are directly formed on flexible plastic substrates. • Al-induced crystallization allows the low-temperature growth (325 °C) of amorphous Ge. • The substrate bending during annealing strongly influences the crystal quality of poly-Ge. • A thick substrate (125 μm) leads to 95% (111)-oriented Ge with grains 100 μm in size.

  15. TiO2 thin-films on polymer substrates and their photocatalytic activity

    International Nuclear Information System (INIS)

    Yang, Jae-Hun; Han, Yang-Su; Choy, Jin-Ho

    2006-01-01

    We have developed dip-coating process for TiO 2 -thin film on polymer substrates (acrylonitrile-butadiene-styrene polymer: ABS, polystyrene: PS). At first, a monodispersed and transparent TiO 2 nano-sol solution was prepared by the controlled hydrolysis of titanium iso-propoxide in the presence of acetylacetone and nitric acid catalyst at 80 deg. C. Powder X-ray diffraction patterns of the dried particles are indicative of crystalline TiO 2 with anatase-type structure. According to the XRD and transmission electron microscopy (TEM) studies, the mean particle size was estimated to be ca. 5 nm. The transparent thin films on ABS and PS substrates were fabricated by dip-coating process by changing the processing variables, such as the number of dip-coating and TiO 2 concentration in nano-sol solution. Scanning electron microscopic (SEM) analysis for the thin film samples reveals that the acetylacetone-modified TiO 2 nano-sol particles are effective for enhancing the interfacial adherence between films and polymeric substrates compared to the unmodified one. Photocatalytic degradation of methylene blue (MB) on the TiO 2 thin-films has also been systematically investigated

  16. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  17. Influence of Substrate Biasing on (Ba,Sr)TiO3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering

    Science.gov (United States)

    Matsumoto, Takeshi; Niino, Atsushi; Ohtsu, Yasunori; Misawa, Tatsuya; Yonesu, Akira; Fujita, Hiroharu; Miyake, Shoji

    2004-03-01

    (Ba,Sr)TiO3 (BST) films were deposited by electron cyclotron resonance (ECR) plasma sputtering with mirror confinement. DC bias voltage was applied to Pt/Ti/SiO2/Si substrates during deposition to vary the intensity of bombardment of energetic ions and to modify film properties. BST films deposited on the substrates at floating potential (approximately +20 V) were found to be amorphous, while films deposited on +40 V-biased substrates were crystalline in spite of a low substrate temperature below 648 K. In addition, atomic diffusion, which causes deterioration in the electrical properties of the films, was hardly observed in the crystallized films deposited with +40 V bias perhaps due to the low substrate temperature. Plasma diagnoses revealed that application of a positive bias to the substrate reduced the energy of ion bombardment and increased the density of excited neutral particles, which was assumed to result in the promotion of chemical reactions during deposition and the crystallization of BST films at a low temperature.

  18. Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

    International Nuclear Information System (INIS)

    Beena, D.; Lethy, K.J.; Vinodkumar, R.; Mahadevan Pillai, V.P.; Ganesan, V.; Phase, D.M.; Sudheer, S.K.

    2009-01-01

    Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T s ) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface

  19. Microwave plasma induced surface modification of diamond-like carbon films

    Science.gov (United States)

    Rao Polaki, Shyamala; Kumar, Niranjan; Gopala Krishna, Nanda; Madapu, Kishore; Kamruddin, Mohamed; Dash, Sitaram; Tyagi, Ashok Kumar

    2017-12-01

    Tailoring the surface of diamond-like carbon (DLC) film is technically relevant for altering the physical and chemical properties, desirable for useful applications. A physically smooth and sp3 dominated DLC film with tetrahedral coordination was prepared by plasma-enhanced chemical vapor deposition technique. The surface of the DLC film was exposed to hydrogen, oxygen and nitrogen plasma for physical and chemical modifications. The surface modification was based on the concept of adsorption-desorption of plasma species and surface entities of films. Energetic chemical species of microwave plasma are adsorbed, leading to desorbtion of the surface carbon atoms due to energy and momentum exchange. The interaction of such reactive species with DLC films enhanced the roughness, surface defects and dangling bonds of carbon atoms. Adsorbed hydrogen, oxygen and nitrogen formed a covalent network while saturating the dangling carbon bonds around the tetrahedral sp3 valency. The modified surface chemical affinity depends upon the charge carriers and electron covalency of the adsorbed atoms. The contact angle of chemically reconstructed surface increases when a water droplet interacts either through hydrogen or van dear Waals bonding. These weak interactions influenced the wetting property of the DLC surface to a great extent.

  20. HTS thin films: Passive microwave components and systems integration issues

    International Nuclear Information System (INIS)

    Miranda, F.A.; Chorey, C.M.; Bhasin, K.B.

    1994-01-01

    The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and space-based systems. However, to readily insert HTS into these systems improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory's High Temperature Superconductivity Space Experiment II (HTSSE-II). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects

  1. Synthesis and characterization of electrolyte-grade 10%Gd-doped ceria thin film/ceramic substrate structures for solid oxide fuel cells

    DEFF Research Database (Denmark)

    Chourashiya, M. G.; Bharadwaj, S. R.; Jadhav, L. D.

    2010-01-01

    In the present research, spray pyrolysis technique is employed to synthesize 10%Gd-doped ceria (GDC) thin films on ceramic substrates with an intention to use the "film/substrate" structure in solid oxide fuel cells. GDC films deposited on GDC substrate showed enhanced crystallite formation....... In case of NiO-GDC composite substrate, the thickness of film was higher (∼ 13 μm) as compared to the film thickness on GDC substrate (∼ 2 μm). The relative density of the films deposited on both the substrates was of the order of 95%. The impedance measurements revealed that ionic conductivity of GDC...

  2. On mobility of ions in thin films in liquid substrates

    International Nuclear Information System (INIS)

    Matveev, Yu.A.

    1984-01-01

    The problem of energy dissipation by emission of ripplons is solved for an ion moving in the media with two interfaces (films on solid and liquid substrates), taking into account the Van der Waals interaction. It is shown that in contrast to the earlier considered case of solid substrate where the action of the Van der Waals forces causes only renormalization of the free fall acceleration, in the vase of liquid substrate the influence of these forces is much more complicated. In addition to renormalization of the amplitude of the emitted surface wave and change of the velocity threshold after which the wave mechanism is effective, in sufficiently thin film, where modes are ''intersected'' the analytical expressions for mobility are also significantly modified. In real experimental environments consideration of all the factors mentioned leads as a rule to higher ion mobility

  3. Effects of post-deposition oxygen annealing on tuning properties of Ba0.8Sr0.2TiO3 thin-film capacitors for microwave integrated circuits

    International Nuclear Information System (INIS)

    Liu, Y.R.; Lai, P.T.; Li, G.Q.; Li, B.; Peng, J.B.; Lo, H.B.

    2005-01-01

    Barium strontium titanate (BST) thin-films deposited on a SiO 2 /Si substrate by argon ion-beam sputtering technique were annealed at 400, 500 and 600 deg. C in oxygen for 30 min, respectively, and were used to fabricate integrated parallel-plate capacitors by standard integrated-circuit technology. These capacitors can achieve tunability greater than 60% at an applied dc voltage of 2 V and a frequency of 100 kHz at room temperature. Considering tunability, loss factor and hysteresis effect, the BST thin-film annealed at 500 deg. C is superior for making tunable microwave integrated capacitors. The effects of annealing treatment in oxygen on the tuning properties of the thin-film capacitors are analyzed, and the results indicate that the tunability is strongly dependent on both oxygen vacancies and negatively charged oxygen, trapped at the grain boundary and/or at the electrode/dielectric interface

  4. Energy Gap, Microwave-Assisted Tunneling, and Josephson Steps in Thin-Film Weak Links at 63 and 302 GHz

    DEFF Research Database (Denmark)

    Kofoed, Bent; Særmark, Knud

    1973-01-01

    We present experimental evidence for the occurrence of energy-gap structure and microwave-assisted tunneling in the IV curves for superconducting thin-film weak links. From measurements of the power and the temperature dependence of the Josephson steps we argue that also the Riedel peak is observ......We present experimental evidence for the occurrence of energy-gap structure and microwave-assisted tunneling in the IV curves for superconducting thin-film weak links. From measurements of the power and the temperature dependence of the Josephson steps we argue that also the Riedel peak...

  5. Optical and electrical characteristics of zirconium oxide thin films deposited on silicon substrates by spray pyrolysis

    International Nuclear Information System (INIS)

    Aguilar-Frutis, M.; Araiza, J.J.; Falcony, C.; Garcia, M.

    2002-01-01

    The optical and electrical characteristics of zirconium oxide thin films deposited by spray pyrolysis on silicon substrates are reported. The films were deposited from a spraying solution of zirconium acetylacetonate in N,N-dimethylformamide using an ultrasonic mist generator on (100) Si substrates. The substrate temperature during deposition was in the range of 400 to 600 grad C. Deposition rates up to 16 A/sec were obtained depending on the spraying solution concentration and on the substrate temperature. A refraction index of the order of 2.0 was measured on these films by ellipsometry. The electrical characteristics of the films were determined from the capacitance and current versus voltage measurements. The addition of water mist during the spraying deposition process was also studied in the characteristics of the films. (Authors)

  6. High quality silicon-based substrates for microwave and millimeter wave passive circuits

    Science.gov (United States)

    Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

    2017-09-01

    Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

  7. Upconversion and tribological properties of β-NaYF{sub 4}:Yb,Er film synthesized on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chuanying [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Cheng, Xianhua, E-mail: xhcheng@sjtu.edu.cn [School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2016-05-15

    Highlights: • β-NaYF{sub 4}:Yb,Er upconversion (UC) film was synthesized on silicon substrate. • Tribological test was used to qualitatively evaluate the adhesion of the UC film. • The UC film was combined with Si substrate by covalent chemical bonds. • The method used in this work can be applicable for other UC films. - Abstract: In this work, β-NaYF{sub 4}:Yb,Er upconversion (UC) film was successfully prepared on silicon (Si) substrate via self-assemble method for the first time. The chemical composition and surface morphology of the UC film were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), water contact angle (WCA), X-ray power diffraction (XRD), and scanning electron microscopy (SEM) measurements. To investigate the effects of KH-560 primer film and chemical reactions on the UC luminescence properties of β-NaYF{sub 4}:Yb,Er UC film, decay profiles of the 540 nm and 655 nm radiations were measured. Furthermore, tribological test was applied to qualitatively evaluate the adhesion of the UC film. The results indicate that the UC film has been successfully prepared on Si substrate by covalent chemical bonds. This work provides a facile way to synthesize β-NaYF{sub 4}:Yb,Er UC film with robust adhesion to the substrate, which can be applicable for other UC films.

  8. Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−x Snx films on Si substrate

    International Nuclear Information System (INIS)

    Mahmodi, H; Hashim, M R

    2017-01-01

    In this study, Ge 1−x Sn x alloy films are co-sputtered on Si(100) substrates using RF magnetron sputtering at different substrate temperatures. Scanning electron micrographs, atomic force microscopy (AFM), Raman spectroscopy, and x-ray photoemission spectroscopy (XPS) are conducted to investigate the effect of substrate temperature on the structural and optical properties of grown GeSn alloy films. AFM results show that RMS surface roughness of the films increases from 1.02 to 2.30 nm when raising the substrate temperature. This increase could be due to Sn surface segregation that occurs when raising the substrate temperature. Raman spectra exhibits the lowest FWHM value and highest phonon intensity for a film sputtered at 140 °C. The spectra show that decreasing the deposition temperature to 140 °C improves the crystalline quality of the alloy films and increases nanocrystalline phase formation. The results of Raman spectra and XPS confirm Ge–Sn bond formation. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on sputtered samples at room temperature (RT) and 140 °C are studied in the dark and under illumination. The sample sputtered at 140 °C performs better than the RT sputtered sample. (paper)

  9. Sonoplasma generated by a combination of ultrasonic waves and microwave irradiation

    International Nuclear Information System (INIS)

    Nomura, Shinfuku; Toyota, Hiromichi

    2003-01-01

    Plasma chemical vapor deposition (plasma CVD) is a generic term for methods in which a precursor containing a material to be deposited is dissociated in a plasma where it is subject to chemical reactions, and is then deposited as a film on the surface of a heated substrate. A drawback of plasma CVD is that this process cannot be used to synthesize large amounts of adsorbate, or to deposit onto substrates that are vulnerable to high temperatures. As liquids are much denser than gases, synthesis rates are thought to be much higher in the former. The authors have observed the ignition and maintenance of a stable plasma in a liquid hydrocarbon exposed to a combination of ultrasonic waves and microwave radiation. Microwave energy is effectively injected into the interior of acoustic cavitation bubbles, which act as nuclei for the ignition and maintenance of the plasma. Because the plasma is formed in a liquid environment, it is possible to obtain much higher film deposition rates at much lower plasma temperatures than ever before. In addition, this process can be carried out at normal temperatures and pressures

  10. Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

    International Nuclear Information System (INIS)

    Tariq, G.H.; Anis-ur-Rehman, M.

    2011-01-01

    The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

  11. Self-assembly Ag nanoparticle monolayer film as SERS Substrate for pesticide detection

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Li, E-mail: zhlisuzh@163.com [School of Chemistry and Life Science, Anhui Key Laboratory of Spin Electron and Nanomaterials (Cultivating Base), Suzhou University, SuZhou 234000 (China)

    2013-04-01

    A self-assembled protocol is introduced to provide effective platforms for the fabrication of ordered Ag nanosized monolayer film. The assembled Ag nanosized monolayer film was characterized using scanning electronic microscopy and surface-enhanced Raman scattering (SERS). The results show that the assembled SERS substrate own excellent Raman enhancement and reproducibility. The synthesized SERS-active substrate was further used to detect methyl-parathion, and the limitation of detection can reach 10{sup −7} M.

  12. Precise measurement of the transverse piezoelectric coefficient for thin films on anisotropic substrate

    International Nuclear Information System (INIS)

    Chun, Doo-Man; Sato, Masashi; Kanno, Isaku

    2013-01-01

    In this study, we propose a reliable measurement method for the effective transverse piezoelectric coefficient for thin films especially on anisotropic substrate. This coefficient for piezoelectric Pb(Zr, Ti)O 3 (PZT) thin films was calculated by measuring the electric field-induced tip displacement of unimorph cantilevers composed of PZT thin films and Si substrates. We evaluated the reliability of the proposed measurement method by comparing it with numerical analysis and confirmed that the relative error of the piezoelectric coefficient (e 31,f ) was less than 1%. We prepared 16 different unimorph cantilevers composed of identical PZT films on different Si beam geometries that had various substrate thicknesses and cantilever widths. Although the effective transverse piezoelectric coefficient e 31,f of PZT thin films ranged from −6.5 to −14 C/m 2 as a function of the applied voltage, the difference among the 16 samples with an applied voltage of 25 V was within 10%. These results demonstrate that the proposed measurement method has sufficient reliability and can be used to evaluate the effective transverse piezoelectric coefficient e 31,f of thin films.

  13. YBCO/manganite layered structures on NdGaO3 substrates

    International Nuclear Information System (INIS)

    Nurgaliev, T; Blagoev, B; Donchev, T; Miteva, S; Mozhaev, P B; Mozhaeva, J E; Ovsyannikov, G A; Kotelyanskii, I M; Jacobsen, C

    2006-01-01

    Results of deposition of YBa 2 Cu 3 O 7-x /CeO 2 /(La 0.7 Ca 0.3 MnO 3 or La 0.7 Sr 0.3 MnO 3 ) structures on the standard oriented and tilted ( 8 0 ) NdGaO 3 substrates and results of investigation of electrical parameters of YBa 2 Cu 3 O 7-x (YBCO) films in such structures are presented. The YBCO component of the structure exhibits lower value of the critical parameters in comparison with those of single YBCO films. The contribution of the magnetic layer to the microwave losses of the YBCO film in the layered structure is evaluated

  14. Impact of deposition temperature on the properties of SnS thin films grown over silicon substrate—comparative study of structural and optical properties with films grown on glass substrates

    Science.gov (United States)

    Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

    2017-11-01

    Tin sulfide (SnS) thin films were chemically deposited over silicon substrate in a temperature range of 250 °C-400 °C. The effects of deposition temperature on the structural, morphological and optical properties of the films were evaluated. All films present an orthorhombic SnS structure with a preferred orientation along (040). High absorption coefficients (in the range of 105 cm-1) were found for all obtained films with an increase in α value when deposition temperature decreases. Furthermore, the effects of substrate type were investigated based on comparison between the present results and those obtained for SnS films grown under the same deposition conditions but over glass substrate. The results suggest that the formation of SnS films onto glass substrate is faster than onto silicon substrate. It is found that the substrate nature affects the orientation growth of the films and that SnS films deposited onto Si present more defects than those deposited onto glass substrate. The optical transmittance is also restricted by the substrate type, mostly below 1000 nm. The obtained results for SnS films onto silicon suggest their promising integration within optoelectronic devices.

  15. Experimental and simulation study of growth of TiO2 films on different substrates and its applications

    Science.gov (United States)

    Ghogare, Trupti T.; Kartha, Moses J.; Kendre, Subhash D.; Pathan, Habib M.

    2018-04-01

    Monte-Carlo Ballistic Deposition simulations have done on substrates with different initial roughness. The grown films were observed to be porous. The initial growths of the films with seed like initiations are observed for substrate with high initial roughness. In order to confirm this effect TiO2 films were deposited on different substrates using chemical bath deposition. The surface morphological and optical properties were measured using scanning electron microscopy and a UV-Vis spectrophotometer. Flower like porous structure are obtained on glass substrate and continuous porous morphology is formed on ITO substrate. The morphology of the surfaces was successfully reconstructed and the surface porosity was calculated after digitalising images and reconstructed the surfaces. The TiO2 film formed on ITO is observed to be 10% more porous than on the film formed on glass substrate. Diffusion Limited Aggregation simulations with multiple seeds confirms that the observed flower like structure formed are due to the screening effects of the diffusing ion by already deposited particles.

  16. Co thin film with metastable bcc structure formed on GaAs(111 substrate

    Directory of Open Access Journals (Sweden)

    Minakawa Shigeyuki

    2014-07-01

    Full Text Available Co thin films are prepared on GaAs(111 substrates at temperatures ranging from room temperature to 600 ºC by radio-frequency magnetron sputtering. The growth behavior and the detailed resulting film structure are investigated by in-situ reflection high-energy electron diffraction and X-ray diffraction. In early stages of film growth at temperatures lower than 200 ºC, Co crystals with metastable A2 (bcc structure are formed, where the crystal structure is stabilized through hetero-epitaxial growth. With increasing the film thickness beyond 2 nm, the metastable structure starts to transform into more stable A1 (fcc structure through atomic displacements parallel to the A2{110} close-packed planes. The crystallographic orientation relationship between the A2 and the transformed A1 crystals is A1{111} || A2{110}. When the substrate temperature is higher than 400 ºC, Ga atoms of substrate diffuse into the Co films and a Co-Ga alloy with bcc-based ordered structure of B2 is formed.

  17. Patterning of metallic electrodes on flexible substrates for organic thin-film transistors using a laser thermal printing method

    International Nuclear Information System (INIS)

    Chen, Kun-Tso; Lin, Yu-Hsuan; Ho, Jeng-Rong; Chen, Chih-Kant; Liu, Sung-Ho; Liao, Jin-Long; Cheng, Hua-Chi

    2011-01-01

    We report on a laser thermal printing method for transferring patterned metallic thin films on flexible plastic substrates using a pulsed CO 2 laser. Aluminium and silver line patterns, with micrometre scale resolution on poly(ethylene terephthalate) substrates, are shown. The printed electrodes demonstrate good conductivity and fulfil the properties for bottom-contact organic thin-film transistors. In addition to providing the energy for transferring the film, the absorption of laser light results in a rise in the temperature of the film and the substrate. This also further anneals the film and softens the plastic substrate. Consequently, it is possible to obtain a film with better surface morphology and with its film thickness implanted in part into the plastic surface. This implantation reveals excellent characteristics in adhesion and flexure resistance. Being feasible to various substrates and executable at ambient temperatures renders this approach a potential alternative for patterning metallic electrodes.

  18. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  19. High-frequency properties of superconducting Y-Ba-Cu-oxide thin films

    International Nuclear Information System (INIS)

    Ramakrishnan, E.S.; Su, M.; Howng, W.

    1992-01-01

    rf and microwave properties of superconducting YBa 2 Cu 3 O 7-x thin films were measured and analyzed using a coplanar resonator structure. The films were developed by sequential electron-beam evaporation of the metals followed by postanneal processing. dc properties of the films were obtained from resistance-temperature and current-voltage measurements to evaluate the transition temperature and current densities. High-frequency properties were measured from 70 to 10 K and in the frequency range 1--3 GHz to determine the film characteristics as compared to pure copper films on the same substrates

  20. Submillimeter and microwave residual losses in epitaxial films of Y-Ba-Cu-O and Tl-Ca-Ba-Cu-O

    International Nuclear Information System (INIS)

    Miller, D.; Richards, P.L.; Eom, C.B.; Geballe, T.H.; Etemad, S.; Inam, A.; Venkatesan, T.; Martens, J.S.; Lee, W.Y.

    1992-12-01

    We have used a novel bolometric technique and a resonant technique to obtain accurate submillimeter and microwave residual loss data for epitaxial thin films of YBa 2 Cu 3 O 7 , Tl 2 Ca 2 Ba 2 Cu 3 O 10 and Tl 2 CaBa 2 Cu 2 O 8 . For all films we obtain good agreement between the submillimeter and microwave data, with the residual losses in both the Y-Ba-Cu-O and Tl-Ca-Ba-Cu-O films scaling approximately as frequency squared below ∼ 1 THz. We are able to fit the losses in the Y-Ba-Cu-O films to a two fluid and a weakly coupled grain model for the a-b planeconductivity, in good agreement with results from a Kramers-Kronig analysis of the loss data

  1. Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate

    Science.gov (United States)

    Usop, R.; Hamed, N. K. A.; Megat Hasnan, M. M. I.; Ikeda, H.; Sabri, M. F. M.; Ahmad, M. K.; Said, S. M.; Salleh, F.

    2018-04-01

    In order to fabricate a thermoelectric device on glass substrate for harvesting waste heat energy through house appliances, the Seebeck coefficient of translucent TiO2 thin film was investigated. The TiO2 thin film was synthesized by using hydrothermal method with F-SnO2 coated glass as substrate. From scanning electron microscopy analysis, the synthesized TiO2 thin film was found to be in nanometer-scale rod structure with a thickness of 4 µm. The Seebeck coefficient was measured in the temperature range of 300 – 400 K. The Seebeck coefficient is found to be in negative value which shows that synthesized film is an n-type semiconductor material, and is lower than the value of bulk-size material. This reduction in Seebeck coefficient of TiO2 thin film is likely due to the low dimensional effect and the difference of carrier concentration.

  2. The Effect of Substrate Temperature on the Structural Properties of Spray Pyrolysed Lead Sulphide (PbS Thin Films

    Directory of Open Access Journals (Sweden)

    Mohammad G. Faraj

    2014-09-01

    Full Text Available Lead sulphide (PbS films were prepared by the chemical spray pyrolysis technique using a solution of Lead nitrate and thiourea. PbS films were deposited (prepared on glass substrate at varied temperature (250-350 oC. Effects of substrate temperature on the structural characteristics of the films were studied. The X-ray diffraction patterns’ results reveal that the all of PbS films have a face centered cubic structure. The X-ray diffraction study showed that irrespective of substrate temperature all the films exhibits a preferred orientation along the (200 plane. The degree of preferred orientation increased with the substrate temperature. It was observed that the increase of the substrate temperature increase the diffraction peak intensity of (200 plane which resulted in increase in grain size and good crystallinity of the films.

  3. Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

    Science.gov (United States)

    Grimberg, I.; Weiss, B. Z.

    1995-04-01

    The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

  4. Effect of modified ITO substrate on electrochromic properties of polyaniline films

    Energy Technology Data Exchange (ETDEWEB)

    Leon-Silva, U.; Nicho, M.E.; Cruz-Silva, Rodolfo [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEMor, Av. Universidad 1001, Col. Chamilpa, 62209, Cuernavaca, Morelos (Mexico); Hu, Hailin [Departamento de Materiales Solares, Centro de Investigacion en Energia, UNAM, Av. Xochicalco S/N, Temixco, 62580, Morelos (Mexico)

    2007-09-22

    In this work, we report the morphological and electrochromic properties of electrochemically synthesized polyaniline (PANI) thin films on bare and modified indium-tin oxide (ITO) glass substrates. In the last case, the surface of ITO glass was covered by a self-assembled monolayer of N-phenyl-{gamma}-aminopropyl-trimethoxysilane (PAPTS). Atomic force microscopy images and perfilometry show that smoother and thinner PANI films were grown on PAPTS-modified ITO substrates. PANI-based electrochromic devices (ECDs) were assembled by using a viscous polymeric electrolyte (PE) of LiClO{sub 4} and polymethyl methacrylate (PMMA) co-dissolved in a mixture of propylene and ethylene carbonate. The architectural design of the devices was glass/ITO/PANI/PE/ITO/glass. A dual ECD was also prepared by collocating a poly(3-methylthiophene) (P3MT) thin film as a complementary electrochromic element. The effect of the PAPTS-modified ITO substrate is reflected in a higher optical transmittance at bleach state and a little less color change at 550 nm of PANI-based ECDs. (author)

  5. Laser welding of thin polymer films to container substrates for aseptic packaging

    Science.gov (United States)

    Brown, N.; Kerr, D.; Jackson, M. R.; Parkin, R. M.

    2000-03-01

    Keyhole laser welding of polymers is a subject well covered and researched, but relatively little information exists regarding the welding of thin polymer films, particularly to a heavier substrate. This paper presents the design of a suitable test apparatus for laser welding thin film to a heavier substrate, and shows the results of an investigation into the feasibility of laser welding multi-layer polymer film lids to tubs for the manufacture of aseptic food containers. A consistent weld, free from defects, is the key to process success. Typical welding defects have been synthesised in order to investigate, and consequently remove, their cause. The result is a reliable welding method based on even film clamping. With careful attention to machine design, a seal of high mechanical strength and chemical integrity is possible.

  6. Influence of Surface Roughness and Agitation on the Morphology of Magnetite Films Electrodeposited on Carbon Steel Substrates

    Directory of Open Access Journals (Sweden)

    Soon-Hyeok Jeon

    2016-11-01

    Full Text Available In this work, we investigated the effects of surface roughness and agitation on the morphology of magnetite films electrodeposited from alkaline Fe(III-triethanolamine (TEA solutions on carbon steel substrates. The surface roughness of the carbon steel substrates was maintained in the range of 1.64–0.06 μm by using mechanical grinding and polishing methods. The agitation speed was set at 0 and 900 rpm during the electrodeposition process. The particle size and surface roughness value of the magnetite films gradually decreased with decreasing substrate roughness. However, the influence of the substrate roughness on the thickness of the magnetite film was negligible. The morphology of the magnetite film fabricated at 900 rpm appeared to be highly faceted compared to that of the magnetite film produced at 0 rpm. The thickness and surface roughness of the magnetite film significantly increased with the agitation speed, which also significantly affected the electrodeposition efficiency. The effects of substrate surface roughness and agitation on the morphology of magnetite films electrodeposited on carbon steel substrates were also discussed. The obtained results provide critical information for the simulation of magnetite deposits on carbon steel pipes in the secondary systems of nuclear power plants.

  7. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    International Nuclear Information System (INIS)

    Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

    2004-01-01

    Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  8. Microbubble-Triggered Spontaneous Separation of Transparent Thin Films from Substrates Using Evaporable Core-Shell Nanocapsules.

    Science.gov (United States)

    Son, Intae; Lee, Byungsun; Kim, Jae Hong; Kim, Chunho; Yoo, Ji Yong; Ahn, Byung Wook; Hwang, Jeongho; Lee, Jonghyuk; Lee, Jun Hyup

    2018-05-23

    The spontaneous separation of a polymer thin film from a substrate is an innovative technology that will enable material recycling and reduce manufacturing cost in the film industry, and this can be applied in a wide range of applications, from optical films to wearable devices. Here, we present an unprecedented spontaneous strategy for separating transparent polymer films from substrates on the basis of microbubble generation using nanocapsules containing an evaporable material. The core-shell nanocapsules are prepared from poly(methyl methacrylate)-polyethyleneimine nanoparticles via the encapsulation of methylcyclohexane (MCH). A spherical nanostructure with a vaporizable core is obtained, with the heat-triggered gas release ability leading to the formation of microbubbles. Our separation method applied to transparent polymer films doped with a small amount of the nanocapsules encapsulating evaporable MCH enables spontaneous detachment of thin films from substrates via vacuum-assisted rapid vaporization of MCH over a short separation time, and clear detachment of the film is achieved with no deterioration of the inherent optical transparency and adhesive property compared to a pristine film.

  9. Downstream microwave ammonia plasma treatment of polydimethylsiloxane

    International Nuclear Information System (INIS)

    Pruden, K.G.; Beaudoin, S.P.

    2005-01-01

    To control the interactions between surfaces and biological systems, it is common to attach polymers, proteins, and other species to the surfaces of interest. In this case, surface modification of polydimethylsiloxane (PDMS) was performed by exposing PDMS films to the effluent from a microwave ammonia plasma, with a goal of creating primary amine groups on the PDMS. These amine sites were to be used as binding sites for polymer attachment. Chemical changes to the surface of the PDMS were investigated as a function of treatment time, microwave power, and PDMS temperature during plasma treatment. Functional groups resulting from this treatment were characterized using attenuated total reflectance infrared spectroscopy. Plasma treatment resulted in the incorporation of oxygen- and nitrogen-containing groups, including primary amine groups. In general, increasing the treatment time, plasma power and substrate temperature increased the level of oxidation of the films, and led to the formation of imines and nitriles. PDMS samples treated at 100 W and 23 deg. C for 120 s were chosen for proof-of-concept dextran coating. Samples treated at this condition contained primary amine groups and few oxygen-containing groups. To test the viability of the primary amines for attachment of biopolymers, functionalized dextran was successfully attached to primary amine sites on the PDMS films

  10. The effect of substrate temperature on the microstructural, electrical and optical properties of Sn-doped indium oxide thin films

    Science.gov (United States)

    Raoufi, Davood; Taherniya, Atefeh

    2015-06-01

    In this work, Sn doping In2O3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300-800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap Eg for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

  11. Growth of TiO2 Thin Film on Various Substrates using RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ali, Riyaz Ahmad Mohamed; Nayan, Nafarizal

    2011-01-01

    The conductivity of Titanium Dioxide (TiO 2 ) thin film fabricated using Radio Frequency (RF) Magnetron Sputtering on Silicon (Si), Indium doped--Tin Oxide (ITO) and microscope glass (M) substrates is presented in this paper. The dependant of thin film thickness and type of substrate been discussed. TiO 2 was deposited using Ti target in Ar+O 2 (45:10) mixture at 250 W for 45, 60, 75, 90, 105 and 120 minute. Resultant thickness varies from 295 nm to 724 nm with deposition rate 6.4 nm/min. On the other hand, resistivity, Rs value for ITO substrate is between 5.72x10 -7 to 1.54x10 -6 Ω.m, Si substrate range is between 3.52x10 -6 to 1.76x10 -5 Ω.m and M substrate range is between 99 to 332 Ω.m. The value of resistivity increases with the thickness of the thin film.

  12. Structure and photoluminescence properties of ZnS films grown on porous Si substrates

    Science.gov (United States)

    Wang, Cai-feng; Hu, Bo; Yi, Hou-hui; Li, Wei-bing

    2011-11-01

    ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.

  13. Highly textured Nd-Fe-B films grown on amorphous substrates

    International Nuclear Information System (INIS)

    Hannemann, Ullrich; Melcher, Steffen; Faehler, Sebastian

    2004-01-01

    Thin films with an almost perfect alignment of Nd 2 Fe 14 B grains with the c-axis (easy magnetisation direction) perpendicular to the film plane were achieved on amorphous SiN substrates using pulsed laser deposition. The texture arises due to epitaxial growth on a Ta(1 1 0) buffer deposited prior to the Nd-Fe-B film. Out-of-plane coercivity of 1.3 T and remanence to saturation magnetisation ratio around 0.95 are obtained for Nd-rich films. An analysis of the coercivity mechanism shows that the switching mechanism is nucleation dominated, independent of the Nd content

  14. Highly textured Nd-Fe-B films grown on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hannemann, Ullrich E-mail: u.hannemann@ifw-dresden.de; Melcher, Steffen; Faehler, Sebastian

    2004-05-01

    Thin films with an almost perfect alignment of Nd{sub 2}Fe{sub 14}B grains with the c-axis (easy magnetisation direction) perpendicular to the film plane were achieved on amorphous SiN substrates using pulsed laser deposition. The texture arises due to epitaxial growth on a Ta(1 1 0) buffer deposited prior to the Nd-Fe-B film. Out-of-plane coercivity of 1.3 T and remanence to saturation magnetisation ratio around 0.95 are obtained for Nd-rich films. An analysis of the coercivity mechanism shows that the switching mechanism is nucleation dominated, independent of the Nd content.

  15. Improvement in the Sensitivity of PbO Doped Tin Oxide Thick Film Gas Sensor by RF and Microwave Oxygen Plasma Treatment

    Directory of Open Access Journals (Sweden)

    J. K. SRIVASTAVA

    2010-07-01

    Full Text Available In the present work efforts have been made to analyze the effect of oxygen plasma and PbO doping on the sensitivity of SnO2-based thick film gas sensor for methanol, propanol and acetone. The effect of substrate temperature on the response of dual frequency (RF and microwave plasma treated thick film sensor array has also been studied. To achieve this, three sensor arrays (each with four tin oxide sensors doped with different (1 %, 2 %, 3 % and 4 % PbO concentrations were fabricated by thick film technology and then treated with oxygen plasma for various durations (5 min, 10 min. and 15 min.. The plasma treated sensors were found to possess appreciably high sensitivity at room temperature in comparison to untreated sensor. The sensitivity showed the increasing trend with plasma exposure time and 15 minutes exposure time was found to be most suitable as the sensitivity of the plasma treated sensors for this duration were high towards all the chosen vapors with maximum (97 % value for propanol. The sensitivity of the sensors were found to be increasing gradually as PbO concentration was varied from 1- 4%.

  16. Effects of the substrate temperature on the properties of CuIn{sub 5}S{sub 8} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gannouni, M., E-mail: gm_mounir@yahoo.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs - ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2011-10-01

    Structural, optical and electrical properties of CuIn{sub 5}S{sub 8} thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuIn{sub 5}S{sub 8} thin films were carried out at substrate temperatures in the temperature range 100-300 deg. C. The effects of heated substrate on their physico-chemical properties were investigated using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), optical transmission and hot probe method. X-ray diffraction revealed that the films are strong preferred orientation along the (3 1 1) plane upon substrate temperature 200 deg. C and amorphous for the substrate temperatures below 200 deg. C. No secondary phases are observed for all the films. The composition is greatly affected by heated substrate. From the optical transmission and reflection, an important absorption coefficient exceeds 10{sup 5} cm{sup -1} at 800 nm was found. As increasing the substrate temperature, the optical energy band gap decreases from 1.70 eV for the unheated films to 1.25 eV for the deposited films at 300 deg. C. It was found that CuIn{sub 5}S{sub 8} thin film is an n-type semiconductor at 250 deg. C.

  17. HTS thin films: Passive microwave components and systems integration issues

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, F.A.; Chorey, C.M.; Bhasin, K.B. [National Aeronautics and Space Administration, Cleveland, OH (United States)

    1994-12-31

    The excellent microwave properties of the High-Temperature-Superconductors (HTS) have been amply demonstrated in the laboratory by techniques such as resonant cavity, power transmission and microstrip resonator measurements. The low loss and high Q passive structures made possible with HTS, present attractive options for applications in commercial, military and space-based systems. However, to readily insert HTS into these systems improvement is needed in such areas as repeatability in the deposition and processing of the HTS films, metal-contact formation, wire bonding, and overall film endurance to fabrication and assembly procedures. In this paper we present data compiled in our lab which illustrate many of the problems associated with these issues. Much of this data were obtained in the production of a space qualified hybrid receiver-downconverter module for the Naval Research Laboratory`s High Temperature Superconductivity Space Experiment II (HTSSE-II). Examples of variations observed in starting films and finished circuits will be presented. It is shown that under identical processing the properties of the HTS films can degrade to varying extents. Finally, we present data on ohmic contacts and factors affecting their adhesion to HTS films, strength of wire bonds made to such contacts, and aging effects.

  18. Sintering effect on the optoelectronic characteristics of HgSe nanoparticle films on plastic substrates

    International Nuclear Information System (INIS)

    Byun, Kwangsub; Cho, Kyoungah; Kim, Sangsig

    2010-01-01

    The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.

  19. Wrinkling of flexoelectric nano-film/substrate systems

    Science.gov (United States)

    Su, Shengkai; Huang, Huaiwei; Liu, Yijie; Zhu, Zheng H.

    2018-02-01

    The study of wrinkling mechanisms essentially helps to establish stable and controllable performance in electronic products. To gain some basic understanding of the wrinkling process in flexoelectric dielectrics, this paper models the wrinkling of nano-film/substrate systems, typically seen in stretchable electronics, subjected to substrate prestrain and voltage loading on electrodes. Flexoelectricity is considered through the constitutive equations proposed by Shen and Hu, and Euler-Bernoulli beam theory is applied to formulate the expressions of wrinkling wavelength and amplitude through the Ritz method. The effects of flexoelectricity, surface parameters, prestrain, applied voltage, structural scale etc on wrinkling behaviors, including wrinkling deformation and the wrinkling critical condition, are discussed. Results reveal that the action of both flexoelectric and surface effects is significant over only a small scale range, with film thickness less than 10 nm. Alongside these issues, the fundamental difference between flexoelectric and piezoelectric effects on wrinkling behaviors is highlighted. Piezoelectricity may act as a promoter or suppressor of wrinkling initiation and amplitude, depending on the applied voltage, while flexoelectricity not only reduces the critical prestrain or voltage required for wrinkling, but also decreases the wrinkling wavelength and amplitude.

  20. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    International Nuclear Information System (INIS)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

  1. Efficient transfer of large-area graphene films onto rigid substrates by hot pressing.

    Science.gov (United States)

    Kang, Junmo; Hwang, Soonhwi; Kim, Jae Hwan; Kim, Min Hyeok; Ryu, Jaechul; Seo, Sang Jae; Hong, Byung Hee; Kim, Moon Ki; Choi, Jae-Boong

    2012-06-26

    Graphene films grown on metal substrates by chemical vapor deposition (CVD) method have to be safely transferred onto desired substrates for further applications. Recently, a roll-to-roll (R2R) method has been developed for large-area transfer, which is particularly efficient for flexible target substrates. However, in the case of rigid substrates such as glass or wafers, the roll-based method is found to induce considerable mechanical damages on graphene films during the transfer process, resulting in the degradation of electrical property. Here we introduce an improved dry transfer technique based on a hot-pressing method that can minimize damage on graphene by neutralizing mechanical stress. Thus, we enhanced the transfer efficiency of the large-area graphene films on a substrate with arbitrary thickness and rigidity, evidenced by scanning electron microscope (SEM) and atomic force microscope (AFM) images, Raman spectra, and various electrical characterizations. We also performed a theoretical multiscale simulation from continuum to atomic level to compare the mechanical stresses caused by the R2R and the hot-pressing methods, which also supports our conclusion. Consequently, we believe that the proposed hot-pressing method will be immediately useful for display and solar cell applications that currently require rigid and large substrates.

  2. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  3. Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate

    International Nuclear Information System (INIS)

    Bui, Thanh Nhan; Raskin, Jean-Pierre; Hackens, Benoit

    2016-01-01

    Bi thin films, with a thickness of 100 nm, are deposited by electron-beam evaporation on a freshly cleaved (100) KCl substrate. The substrate temperature during film growth (T_d_e_p) ranges from room temperature up to 170 °C. Films deposited at room temperature exhibit a maze-like microstructure typical of the rhombohedral (110) texture, as confirmed by X-ray diffraction. For T_d_e_p above 80 °C, a different microstructure appears, characterized by concentric triangular shapes corresponding to the trigonal (111) texture. Temperature dependence of the resistivity shows a transition from a semiconductor-like behavior for films deposited at room temperature to a metallic-like behavior for T_d_e_p above 80 °C. From magnetoresistance measurements between room temperature and 1.6 K, we extract the electron and hole mobilities, concentrations, and mean free paths, which allow to draw a complete picture of the transport properties of both types of films.

  4. Influence of the side chain and substrate on polythiophene thin film surface, bulk, and buried interfacial structures.

    Science.gov (United States)

    Xiao, Minyu; Jasensky, Joshua; Zhang, Xiaoxian; Li, Yaoxin; Pichan, Cayla; Lu, Xiaolin; Chen, Zhan

    2016-08-10

    The molecular structures of organic semiconducting thin films mediate the performance of various devices composed of such materials. To fully understand how the structures of organic semiconductors alter on substrates due to different polymer side chains and different interfacial interactions, thin films of two kinds of polythiophene derivatives with different side-chains, poly(3-hexylthiophene) (P3HT) and poly(3-potassium-6-hexanoate thiophene) (P3KHT), were deposited and compared on various surfaces. A combination of analytical tools was applied in this research: contact angle goniometry and X-ray photoelectron spectroscopy (XPS) were used to characterize substrate dielectric surfaces with varied hydrophobicity for polymer film deposition; X-ray diffraction and UV-vis spectroscopy were used to examine the polythiophene film bulk structure; sum frequency generation (SFG) vibrational spectroscopy was utilized to probe the molecular structures of polymer film surfaces in air and buried solid/solid interfaces. Both side-chain hydrophobicity and substrate hydrophobicity were found to mediate the crystallinity of the polythiophene film, as well as the orientation of the thiophene ring within the polymer backbone at the buried polymer/substrate interface and the polymer thin film surface in air. For the same type of polythiophene film deposited on different substrates, a more hydrophobic substrate surface induced thiophene ring alignment with the surface normal at both the buried interface and on the surface in air. For different films (P3HT vs. P3KHT) deposited on the same dielectric substrate, a more hydrophobic polythiophene side chain caused the thiophene ring to align more towards the surface at the buried polymer/substrate interface and on the surface in air. We believe that the polythiophene surface, bulk, and buried interfacial molecular structures all influence the hole mobility within the polythiophene film. Successful characterization of an organic conducting

  5. Room temperature deposition of perpendicular magnetic anisotropic Co{sub 3}Pt thin films on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yu-Shen; Dai, Hong-Yu; Hsu, Yi-Wei [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Ou, Sin-Liang, E-mail: slo@mail.dyu.edu.tw [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan (China); Chen, Shi-Wei [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China)

    2017-03-01

    Co{sub 3}Pt alloy thin films were deposited on the glass substrate at room temperature (RT) and 300 °C, which showed high perpendicular magnetic anisotropy (PMA) and isotropy magnetic behaviors, respectively. Co{sub 3}Pt HCP (0002) planes grew along the substrate plane for the films deposited at RT. The easy axis [0001] was consequently vertical to the substrate surface and obtained the predominant PMA. Large magnetic domains and sharp boundary also supported high PMA in RT-deposited samples. On the other hand, the PMA was significantly decreased with increasing the deposition temperature from RT to 300 °C. Hard HCP(0002) and soft A1(111) co-existed in the film and the magnetic exchanged coupling between these two phases induced isotropy magnetic behavior. In addition, the various thicknesses (t) of the RT-deposited Co{sub 3}Pt films were deposited with different base pressures prior to sputtering. The Kerr rotation loops showed high PMA and out-of-plane squareness (S{sub ⊥}) of ~0.9 were found in low base pressure chamber. Within high base pressure chamber, Co{sub 3}Pt films just show magnetic isotropy behaviors. This study provides a fabrication method for the preparation of high PMA HCP-type Co{sub 3}Pt films on the glass substrate without any underlayer at RT. The results could be the base for future development of RT-deposited magnetic alloy thin film with high PMA. - Highlights: • Fabricated high perpendicular magnetic anisotropy Co{sub 3}Pt thin film on glass substrate. • Prepared HCP Co{sub 3}Pt thin film at room temperature. • The key to enhance the PMA of the Co{sub 3}Pt films. • Thinner film is good to fabricate PMA Co{sub 3}Pt thin films.

  6. Magnetic properties and microwave characteristics of Ni-Zn-Cu ferrite film fabricated by aerosol deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Kagotani, T. [Departtment of Materials Science, Tohoku University, Aza-Aoba02 Aoba-ku, Sendai 980-8597 (Japan)]. E-mail: kagotant@material.tohoku.ac.jp; Kobayashi, R. [Departtment of Materials Science, Tohoku University, Aza-Aoba02 Aoba-ku, Sendai 980-8597 (Japan); Sugimoto, S. [Departtment of Materials Science, Tohoku University, Aza-Aoba02 Aoba-ku, Sendai 980-8597 (Japan); Inomata, K. [Departtment of Materials Science, Tohoku University, Aza-Aoba02 Aoba-ku, Sendai 980-8597 (Japan); Okayama, K. [Sony EMCS Corporation, Shinagawa INTERCITY C Tower, 2-15-3 Konan, Minato-ku Tokyo 106-6201 (Japan); Akedo, J. [Institute of Advanced Science and Technology, Namiki 1-2-1, Tsukuba 305-8564 (Japan)

    2005-04-15

    Microwave radiation in the GHz is increasingly being used in telecommunication and data processing. However, this has given rise to electromagnetic wave interference (EMI). Ni-Zn-Cu ferrite film was prepared by aerosol deposition method (ADM) depending on its capability as an absorber or a conducted noise suppressor in the quasi-microwave frequency range. The ADM is a kind of high-speed coating method. The film thickness of 7{mu}m was obtained by the deposition for 4min and the rate was estimated at 2.8{mu}m/min. The saturation magnetization of the film was 6.33x10{sup -5}Wbm/kg and the coercivity was 0.94kA/m. This value was nearly equal to that of sintered sample. The maximum complex permeabilities {mu}' and {mu}'' were 200 and 70. The resonance frequency f{sub r}=200MHz was over Snoek's limit.

  7. Profilometry of thin films on rough substrates by Raman spectroscopy

    KAUST Repository

    Ledinský, Martin

    2016-12-06

    Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.

  8. Profilometry of thin films on rough substrates by Raman spectroscopy

    KAUST Repository

    Ledinský , Martin; Paviet-Salomon, Bertrand; Vetushka, Aliaksei; Geissbü hler, Jonas; Tomasi, Andrea; Despeisse, Matthieu; De Wolf, Stefaan; Ballif  , Christophe; Fejfar, Antoní n

    2016-01-01

    Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.

  9. Surface smoothening effects on growth of diamond films

    Science.gov (United States)

    Reshi, Bilal Ahmad; Kumar, Shyam; Kartha, Moses J.; Varma, Raghava

    2018-04-01

    We have carried out a detailed study of the growth dynamics of the diamond film during initial time on diamond substrates. The diamond films are deposited using Microwave Plasma Chemical Vapor Deposition (MPCVD) method for different times. Surface morphology and its correlation with the number of hours of growth of thin films was invested using atomic force microscopy (AFM). Diamond films have smooth interface with average roughness of 48.6873nm. The initial growth dynamics of the thin film is investigated. Interestingly, it is found that there is a decrease in the surface roughness of the film. Thus a smoothening effect is observed in the grown films. The film enters into the growth regime in the later times. Our results also find application in building diamond detector.

  10. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

    2015-12-01

    Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  11. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  12. Ferromagnetic Film on a Superconducting Substrate

    OpenAIRE

    Bulaevskii, L. N.; Chudnovsky, E. M.

    2000-01-01

    We study the equilibrium domain structure and magnetic flux around a ferromagnetic (FM) film with perpendicular magnetization M_0 on a superconducting (SC) substrate. At 4{\\pi}M_0> 1. Here \\lambda_L is the London penetration length. For 4{\\pi}M_0 > H_{c1} and l_{N} in excess of about 35 {\\lambda}_{L}, the domains are connected by SC vortices. We argue that pinning of vortices by magnetic domains in FM/SC multilayers can provide high critical currents.

  13. TiO2 Nanotubes on Transparent Substrates: Control of Film Microstructure and Photoelectrochemical Water Splitting Performance

    Directory of Open Access Journals (Sweden)

    Matus Zelny

    2018-01-01

    Full Text Available Transfer of semiconductor thin films on transparent and or flexible substrates is a highly desirable process to enable photonic, catalytic, and sensing technologies. A promising approach to fabricate nanostructured TiO2 films on transparent substrates is self-ordering by anodizing of thin metal films on fluorine-doped tin oxide (FTO. Here, we report pulsed direct current (DC magnetron sputtering for the deposition of titanium thin films on conductive glass substrates at temperatures ranging from room temperature to 450 °C. We describe in detail the influence that deposition temperature has on mechanical, adhesion and microstructural properties of titanium film, as well as on the corresponding TiO2 nanotube array obtained after anodization and annealing. Finally, we measure the photoelectrochemical water splitting activity of different TiO2 nanotube samples showing that the film deposited at 150 °C has much higher activity correlating well with the lower crystallite size and the higher degree of self-organization observed in comparison with the nanotubes obtained at different temperatures. Importantly, the film showing higher water splitting activity does not have the best adhesion on glass substrate, highlighting an important trade-off for future optimization.

  14. Electric field modulation of magnetic anisotropy and microwave absorption properties in Fe50Ni50/Teflon composite films

    Directory of Open Access Journals (Sweden)

    Zhenjun Xia

    2016-05-01

    Full Text Available Fe50Ni50 nanoparticle films with the size about 6 nm were deposited by a high energetic cluster deposition source. An electric field of about 0 - 40 kV was applied on the sample platform when the films were prepared. The field assisted deposition technique can dramatically induce in-plane magnetic anisotropy. To probe the microwave absorption properties, the Fe50Ni50 nanoparticles were deliberately deposited on the dielectric Teflon sheet. Then the laminated Fe50Ni50/Teflon composites were used to do reflection loss scan. The results prove that the application of electric field is an effective avenue to improve the GHz microwave absorption performance of our magnetic nanoparticles films expressed by the movement of reflection loss peak to high GHz region for the composites.

  15. Microwave plasma CVD of NANO structured tin/carbon composites

    Science.gov (United States)

    Marcinek, Marek [Warszawa, PL; Kostecki, Robert [Lafayette, CA

    2012-07-17

    A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

  16. Size- and phase-dependent mechanical properties of ultrathin Si films on polyimide substrates

    International Nuclear Information System (INIS)

    Schlich, Franziska F.; Spolenak, Ralph

    2016-01-01

    Ultrathin Si films in the nanometer range are extensively used for electronic and optoelectronic devices. Their mechanical properties have a high impact on the durability of the devices during lifetime. Here, fragmentation and buckling of 8–103 nm thin amorphous and polycrystalline (poly-) Si films on polyimide substrates have been studied by in situ light microscopy, Raman spectroscopy and resistance measurements. Generally, a smaller film thickness and a compressive residual stress delays the fracture of the film. The fracture strength of poly-Si films is larger compared to that of amorphous Si films while the adhesion to the substrate is better for amorphous Si compared to poly-Si. The onset delamination as a function of film thickness differs for the two phases and is described by two different models. Thin-film models for fracture toughness (amorphous Si: K 1C  = 1.49 ± 0.22, poly-Si: K 1C  = 3.36 ± 1.37) are applied, discussed, and found to be consistent with literature values.

  17. Laser micromachining of indium tin oxide films on polymer substrates by laser-induced delamination

    International Nuclear Information System (INIS)

    Willis, David A; Dreier, Adam L

    2009-01-01

    A Q-switched neodymium : yttrium-aluminium-garnet (Nd : YAG) laser was used to ablate indium tin oxide (ITO) thin films from polyethylene terephthalate substrates. Film damage and partial removal with no evidence of a melt zone was observed above 1.7 J cm -2 . Above the film removal threshold (3.3 J cm -2 ) the entire film thickness was removed without substrate damage, suggesting that ablation was a result of delamination of the film in the solid phase. Measurements of ablated fragment velocities near the ablation threshold were consistent with calculations of velocities caused by stress-induced delamination of the ITO film, except for a high velocity component at higher fluences. Nanosecond time-resolved shadowgraph photography revealed that the high velocity component was a shock wave induced by the rapid compression of ambient air when the film delaminated.

  18. Structural, optical and electrical characteristics of ITO thin films deposited by sputtering on different polyester substrates

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.

    2008-01-01

    Indium tin oxide (ITO) thin films were deposited by sputtering at room temperature on glass and different polyester substrates; namely polyarylate (PA), polycarbonate (PC) and polyethylene terephtalate (PET). The influence of the substrate on the structural, optical and electrical characteristics of the ITO layers was investigated. The sputtered films exhibited crystallization in the (2 2 2) orientation, with higher mean crystallite size and lower structural distortion onto PET than onto PA, PC or glass substrates. ITO films deposited onto PET showed also higher band gap energy, higher carrier concentration and lower resistivity than the ITO layers onto the other tested substrates. These optical and electrical characteristics have been related to the structural distortion that was found dependent on the specific polyester substrate

  19. Effect of substrate porosity on photoluminescence properties of ZnS films prepared on porous Si substrates by pulsed laser deposition

    Science.gov (United States)

    Wang, Cai-Feng; Li, Qing-Shan; Zhang, Li-Chun; Lv, Lei; Qi, Hong-Xia

    2007-05-01

    ZnS films were deposited on porous Si (PS) substrates with different porosities by pulsed laser deposition. The photoluminescence spectra of the samples were measured to study the effect of substrate porosity on luminescence properties of ZnS/porous Si composites. After deposition of ZnS films, the red photoluminescence peak of porous Si shows a slight blueshift compared with as-prepared porous Si samples. With an increase of the porosity, a green emission at about 550 nm was observed which may be ascribed to the defect-center luminescence of ZnS films, and the photoluminescence of ZnS/porous Si composites is very close to white light. Good crystal structures of the samples were observed by x-ray diffraction, showing that ZnS films were grown in preferred orientation. Due to the roughness of porous Si surface, some cracks appear in ZnS films, which could be seen from scanning electron microscope images.

  20. Realisation and study of poly-phthalocyanine thin films grafted on solid substrate

    International Nuclear Information System (INIS)

    Huc, Vincent

    1999-01-01

    The aim of this work is to develop thin films of phthalocyanines covalently grafted to solid substrates. These thin films are formed of successive monomolecular layers of macrocycles, deposited on the substrate by a 'Merrifield' sequential method. These phthalocyanines have in their centre a metallic ion (such as ruthenium) which ensures the bonding of phthalocyanines on the substrate and the assembling of monolayers consecutive together. The deposition of these monolayers is provided by a succession of two spontaneous exchange ligands reactions between the labile groups L initially bound to ruthenium and to those present on the substrate (preliminary functionalized). The repetition of these two steps allows to consider the controlled formation of phthalocyanines multilayers by self-assembling. The main substrates used are the silicon oxide and the gold. Their different characteristics have imposed the development of separate functionalization and characterization methods. The results obtained with these two substrates are separately described. A second method of construction of successive monolayers of phthalocyanines is described involving a chemical coupling between an amine function carried out by the substrate and an aldehyde function present on the ligands bound on ruthenium. (author) [fr

  1. Enhanced Self-Organized Dewetting of Ultrathin Polymer Blend Film for Large-Area Fabrication of SERS Substrate.

    Science.gov (United States)

    Zhang, Huanhuan; Xu, Lin; Xu, Yabo; Huang, Gang; Zhao, Xueyu; Lai, Yuqing; Shi, Tongfei

    2016-12-06

    We study the enhanced dewetting of ultrathin Polystyrene (PS)/Poly (methyl methacrylate) (PMMA) blend films in a mixed solution, and reveal the dewetting can act as a simple and effective method to fabricate large-area surface-enhanced Raman scattering (SERS) substrate. A bilayer structure consisting of under PMMA layer and upper PS layer forms due to vertical phase separation of immiscible PS/PMMA during the spin-coating process. The thicker layer of the bilayer structure dominates the dewetting structures of PS/PMMA blend films. The diameter and diameter distribution of droplets, and the average separation spacing between the droplets can be precisely controlled via the change of blend ratio and film thickness. The dewetting structure of 8 nm PS/PMMA (1:1 wt%) blend film is proved to successfully fabricate large-area (3.5 cm × 3.5 cm) universal SERS substrate via deposited a silver layer on the dewetting structure. The SERS substrate shows good SERS-signal reproducibility (RSD dewetting of polymer blend films broadens the application of dewetting of polymer films, especially in the nanotechnology, and may open a new approach for the fabrication of large-area SERS substrate to promote the application of SERS substrate in the rapid sensitive detection of trace molecules.

  2. Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, M.-C. [Department of Materials Science and Engineering, National ChungHsin University, 250, Kuo-Kung Road, 40227 Taichung, Taiwan (China); Chang, L.-S. [Department of Materials Science and Engineering, National ChungHsin University, 250, Kuo-Kung Road, 40227 Taichung, Taiwan (China)], E-mail: lschang@dragon.nchu.edu.tw; Lin, H.C. [Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, 106 Taipei, Taiwan (China)

    2008-03-30

    Titanium oxynitride (TiN{sub x}O{sub y}) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN{sub x}O{sub y} films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm{sup 2} to 7 W/cm{sup 2}. The maximum deposition rate occurs, as the substrate bias is -40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN{sub x}O{sub y} films deposited at power densities above 4 W/cm{sup 2} show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN{sub x}O{sub y} films reach values as low as 0.98 g/m{sup 2}-day-atm and 0.60 cm{sup 3}/m{sup 2}-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al{sub 2}O{sub 3} barrier films. Therefore, TiN{sub x}O{sub y} films are potential candidates to be used as a gas permeation barrier for PET substrate.

  3. Fast assembly of ordered block copolymer nanostructures through microwave annealing.

    Science.gov (United States)

    Zhang, Xiaojiang; Harris, Kenneth D; Wu, Nathanael L Y; Murphy, Jeffrey N; Buriak, Jillian M

    2010-11-23

    Block copolymer self-assembly is an innovative technology capable of patterning technologically relevant substrates with nanoscale precision for a range of applications from integrated circuit fabrication to tissue interfacing, for example. In this article, we demonstrate a microwave-based method of rapidly inducing order in block copolymer structures. The technique involves the usage of a commercial microwave reactor to anneal block copolymer films in the presence of appropriate solvents, and we explore the effect of various parameters over the polymer assembly speed and defect density. The approach is applied to the commonly used poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) and poly(styrene)-b-poly(2-vinylpyridine) (PS-b-P2VP) families of block copolymers, and it is found that the substrate resistivity, solvent environment, and anneal temperature all critically influence the self-assembly process. For selected systems, highly ordered patterns were achieved in less than 3 min. In addition, we establish the compatibility of the technique with directed assembly by graphoepitaxy.

  4. Film processing characteristics of nano gold suitable for conductive application on flexible substrates

    International Nuclear Information System (INIS)

    Gupta, Ashish; Mandal, Saumen; Katiyar, Monica; Mohapatra, Yashowanta N.

    2012-01-01

    In spite of large number of studies and wide use of thiol encapsulated gold nanoparticles, the mechanism of their transformation to thin gold films for conductive applications is not as yet well understood. In order to understand and optimize the process of conversion of nanoparticle based ink for printing on plastic substrates, we synthesize and study thiolated Au nanoparticles, with average size of 2 nm, but with differing carbon chain length viz. butane (Au-C4), hexane (Au-C6) and octane (Au-C8). The link between the properties of Au nanoparticle and its transformation from nonconductive gold nanoparticle ink to conductive gold film is studied using a variety of techniques such as thermo gravimetric analysis (TGA), X-ray diffraction (XRD), atomic force microscopy, scanning electron microscopy and electrical conductivity measurements. A combined study of the shape of solution TGA and differential thermal analysis indicates occurrence of two distinct processes corresponding to disentanglement and debonding of thiol chains preceding the sintering of nanoparticles. The lowest sintering temperature is observed to be approximately 155 °C for chain length C4, and hence Au-C4 on polyethylene terephthalate substrates is studied in detail. Though XRD peaks of thick drop-cast films on polyethylene terephthalate substrate show increasing peak intensity with annealing temperature as expected, for spin coated thin films, in contrast, the peak intensity decreases with increase in annealing temperature. Electrical conductivity of the thin films is comparable to bulk gold after conversion, but decreases with increase in annealing temperature demonstrating the usefulness of insights obtained in the study for optimization of annealing schedules. - Highlights: ► Sintering of alkanethiol capped Au nanoparticles is chainlength dependent. ► Sintering temperature depends on thiol debonding. ► Butanethiol capped Au nanoparticles are the most suitable for flexible substrates.

  5. ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substrates

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Alves, H.; Goncalves, A.; Varela, J.; Nascimento, R.; Amaral, A.

    2005-01-01

    Indium tin oxide (ITO) films were deposited by radio frequency (rf)-plasma enhanced reactive thermal evaporation (rf-PERTE) at room temperature on intrinsic ZnO/polymer substrates to enhance their electrical and structural properties. The polymer substrate used is polyethylene terephthalate (PET). The thickness of the ZnO films varied in the range 50-150 nm. The average thickness of the ITO films is of about 170 nm. Results show that ITO deposited on bare PET substrates exhibit: an average visible transmittance of about 85% and an electrical resistivity of 5.6 x 10 -2 Ω cm. ITO on ZnO/PET substrates show the optical quality practically preserved and the resistivity decreased to a minimum value of 1.9x10 -3 Ω cm for ZnO layers 125 nm thick. The electrical properties of ITO on ZnO/PET are largely improved by the increase in carrier mobility

  6. Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

    Science.gov (United States)

    Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Coetsee, E.; Swart, H. C.

    2017-12-01

    The pulsed laser deposition (PLD) substrate temperature and post-annealing temperature are effective methods to control the film optical and structural properties. The structure, morphology and optical properties of the deposited and post-annealed PLD ZnO:Zn films were studied. The films were deposited at different substrate temperatures of 50 °C, 200 °C and 400 °C. The films deposited at the substrate temperature of 50 °C and 200 °C were post-annealed in air at 400 °C and 600 °C for two hours. The films all had a highly preferential orientation with the hexagonal c-axis perpendicular to the substrate surface. The stress was found to be compressive stress with values -3.289 GPa, -4.864 GPa and -4.425 GPa for the film deposited at 50 °C, 200 °C and 400 °C, respectively. After post-annealing treatments, the stress of the films was almost completely released and stress-free films were obtained. The crystallite sizes were 19 nm, 25 nm and 39 nm, while the average particles sizes were 95 nm, 85 nm and 129 nm for the film deposited at 50 °C, 200 °C and 400 °C respectively. The crystallite sizes and particles sizes seemed to increase with the increase in the substrate temperature. Contrary to this, the change in crystallite sizes were inversely proportional to the particles size when increasing the post-annealing temperatures. Deconvoluted X-ray photoelectron spectroscopy peaks of the O1s binding energy region revealed that the films deposited at different substrate temperatures contained oxygen-related defects. Photoluminescence studies revealed that the films all emitted ultra-violet emission around 379 nm. The film deposited at 50 °C emitted a broad green emission centered at ∼524 nm. By increasing the substrate temperature up to 200 °C and 400 °C a new orange emission around 621 nm and 634 nm as well as a weak emission around 416 nm and 500 nm were observed, respectively. After post-annealing treatments, new bands over the visible region (blue, green

  7. High Tc screen-printed YBa2Cu3O(7-x) films - Effect of the substrate material

    Science.gov (United States)

    Bansal, Narottam P.; Simons, Rainee N.; Farrell, D. E.

    1988-08-01

    Thick films of YBa2Cu3O(7-x) have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni-Al-Ti), and barium tetratitanate (Ba-Ti) substrates by the screen printing technique. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba-Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni-Al-Ti had a Tc (onset) of about 95 K and lost 90 percent of its resistance by about 75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc (onset) of about 96 K, Tc (zero) of about 66 K, and Delta Tc of about 10 K. The best film was obtained on spinel and had Tc (onset) of about 94 K, zero resistance at 81 K, and a transition width of about 7 K.

  8. Influence of substrate temperature on structural, morphological and electrical properties of PbSe film deposited by radio frequency sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wenran, E-mail: fengwenran@bipt.edu.cn [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China); Wang, Xiaoyang [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Chen, Fei [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China); Liu, Wan [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Zhou, Hai; Wang, Shuo; Li, Haoran [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China)

    2015-03-02

    PbSe films were prepared by radio frequency magnetron sputtering from PbSe slices target under different substrate temperatures (from room temperature to 300 °C). The effect of substrate temperature on structural properties of PbSe thin film was investigated. The surface morphology and the crystal structure of film were determined using field emission scanning electron microscopy and X-ray diffractometry, respectively. It was found that the grain shape changed with substrate temperature. When the substrate temperature was below 250 °C, most of the crystal grains were spherical in shape. For temperatures above 250 °C, the grains transformed to triangle or prismatic ones. Meanwhile, with increasing substrate temperature, the preferential orientation of the film changed from (200) to (220). To figure out the intrinsic mechanisms for this behavior, the texture coefficient, as well as the comparison between surface energy and elastic strain energy was performed. At lower temperature, the film growth was determined by surface energy, which was replaced by strain energy at higher temperature. Therefore, the diversity of crystal structure and morphology of the films at different substrate temperatures occurred. Moreover, the electrical properties of the p-type PbSe films are also quite dependent on substrate temperature. With substrate temperature increased, the electrical resistivity decreased from 1.88 to 0.14 Ω cm, while the carrier concentration increased from 1.74 × 10{sup 18} to 4.08 × 10{sup 19} cm{sup −3} as the mobility was enhanced from 0.54 to 2.21 cm{sup 2}/Vs. - Highlights: • PbSe thin films were deposited by radio frequency magnetron sputtering. • Substrate temperature determines crystal structure of PbSe films. • Transformation behaviors of PbSe films were explained by energy calculations.

  9. Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Perrone, A. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); D’Elia, M. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); Di Giulio, M.; Maruccio, G. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Cola, A. [National Council Research, Institute for Microelectronics and Microsystems, 73100 Lecce (Italy); Stankova, N.E. [Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Kovacheva, D.G. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2014-07-01

    Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

  10. Dewetting and deposition of thin films with insoluble surfactants from curved silicone hydrogel substrates.

    Science.gov (United States)

    Bhamla, M Saad; Balemans, Caroline; Fuller, Gerald G

    2015-07-01

    We investigate the stabilizing effect of insoluble surfactant monolayers on thin aqueous films. We first describe an experimental platform that enables the formation of aqueous films laden with dipalmitoylphosphatidylcholine (DPPC) monolayers on curved silicone hydrogel (SiHy) substrates. We show that these surfactant layers extend the lifetime of the aqueous films. The films eventually "dewet" by the nucleation and growth of dry areas and the onset of this dewetting can be controlled by the surface rheology of the DPPC layer. We thus demonstrate that increasing the interfacial rheology of the DPPC layer leads to stable films that delay dewetting. We also show that dewetting can be exploited to controllably pattern the underlying curved SiHy substrates with DPPC layers. Copyright © 2015 Elsevier Inc. All rights reserved.

  11. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  12. A Statistical Analysis of Laser Ablated Ba(Sub 0.50)Sr(Sub 0.50)TiO(Sub 3)/LaAlO(Sub 3) Films for Microwave Applications

    Science.gov (United States)

    Romanofsky, R. R.; Varaljay, N. C.; Alterovitz, S. A.; Miranda, F. A.; Mueller, C. M.; VanKeuls, F. W.; Kim, J.; Harshavardhan, K. S.

    2002-01-01

    The NASA Glenn Research Center is constructing a 616 element scanning phased array antenna using thin film Ba(sub x)Sr(sub 1-x)TiO(sub 3) based phase shifters. A critical milestone is the production of 616 identical phase shifters at 19 GHz with [asymptotically equal to]4 dB insertion loss and at least 337.5 deg phase shift with 3 percent bandwidth. It is well known that there is a direct relationship between dielectric tuning and loss due to the Kramers-Kronig relationship and that film crystallinity and strain, affected by the substrate template, play an important role. Ba(sub 0.50)Sr(sub 0.50)TiO (sub 3) films, nominally 400 nm thick, were deposited on 48 0.25 mm thick, 5 cm diameter LaAlO(sub 3) wafers. Although previous results suggested that Mn-doped films on MgO were intrinsically superior in terms of phase shift per unit loss, for this application phase shift per unit length was more important. The composition was selected as a compromise between tuning and loss for room temperature operation (e.g. crystallinity progressively degrades for Ba concentrations in excess of 30 percent). As a prelude to fabricating the array, it was necessary to process, screen, and inventory a large number of samples. Variable angle ellipsometry was used to characterize refractive index and film thickness across each wafer. Microstructural properties of the thin films were characterized using high resolution X-ray diffractometry. Finally, prototype phase shifters and resonators were patterned on each wafer and RE probed to measure tuning as a function of dc bias voltage as well as peak (0 field) permittivity and unloaded Q. The relationship among film quality and uniformity and performance is analyzed. This work presents the first statistically relevant study of film quality and microwave performance and represents a milestone towards commercialization of thin ferroelectric films for microwave applications.

  13. Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

    2018-06-01

    Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

  14. Microwave permeability of stripe patterned FeCoN thin film

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yuping [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 1, Singapore 117411 (Singapore); Yang, Yong, E-mail: tslyayo@nus.edu.sg [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 1, Singapore 117411 (Singapore); Ma, Fusheng; Zong, Baoyu; Yang, Zhihong [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 1, Singapore 117411 (Singapore); Ding, Jun [Department of Materials Science and Engineering, National University of Singapore, Singapore 117574 (Singapore)

    2017-03-15

    Magnetic stripe patterns are of great importance for microwave applications owing to their highly tunable microwave permeability by adjusting the geometrical dimensions. In this work, stripe patterned FeCoN films with 160 nm thickness are fabricated by using standard UV photolithography. Their microwave permeability are investigated systematically via both experiment and micromagnetic simulation. The good agreement between experimental and simulation results suggests that stripe width is crucial for the microwave magnetic properties of the stripe pattern. It is demonstrated by simulation that with increasing stripe width from 1 to 80 µm the initial permeability shows a continuous growth from about 8–322, whiles the resonance frequency drops dramatically from 18.7 to 3.1 GHz at 4 µm gap size. Smaller gap size would result in slightly increased initial permeability due to larger magnetic volume ratio, accompanied by decreased resonance frequency because of stronger magnetostatic interaction. Moreover, the experimental investigation on stripe length effect indicates that the stripe length should be kept as long as possible to achieve uniform bulk resonance mode and high permeability value. Insufficient stripe length would result in low frequency edge mode and decayed bulk mode. This study could provide valuable guidelines on the selection of proper geometry dimensions of FeCoN stripe patterns for high frequency applications. - Highlights: • This work presents a systematic study on permeability of FeCoN stripe pattern. • Geometrical parameters of the stripe pattern are systematically optimized. • Several important conclusions has been obtained. • The results offer guideline on FeCoN stripe patterns for high frequency applications.

  15. Influence of substrate temperature on the optical and electrical properties magnetron sputtering ITO films

    International Nuclear Information System (INIS)

    Khripunov, G.S.; Yurchenko, G.V.

    1999-01-01

    Electrical and optical properties of ITO films obtained at substrate temperature from 200 degree C to 500 degree C by magnetron sputtering of target 95% In 2 O 3 - 5% SnO 2 were studied. It was shown that the ITO film obtained at the substrate temperature 300 i N have optimum combination of the optical and electrical characteristics: resistivity 2.1 centre dot 10 -4 Ω cm, transmittance in visible spectral range about 88% at the thickness film 0.61 μ, factor of quality reaches 8.2 centre dot 10 -2 Ω 1

  16. Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate

    International Nuclear Information System (INIS)

    Leontyev, I N; Janolin, P-E; Dkhil, B; Yuzyuk, Yu I; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M

    2011-01-01

    A Nd-doped BiFeO 3 thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45 0 with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

  17. Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

    International Nuclear Information System (INIS)

    Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

    2011-01-01

    Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

  18. Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

    CERN Document Server

    Li Peng; Mazumder, J

    2003-01-01

    Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

  19. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    International Nuclear Information System (INIS)

    Park, Taesoon; Kim, Dongsik

    2015-01-01

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10 −4 Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively

  20. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

    2015-03-02

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

  1. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  2. Competitive concurrence of surface wrinkling and dewetting of liquid crystalline polymer films on non-wettable substrates.

    Science.gov (United States)

    Song, Sung E; Choi, Gwan H; Yi, Gi-Ra; Yoo, Pil J

    2017-11-01

    Polymeric thin films coated on non-wettable substrates undergo film-instabilities, which are usually manifested as surface deformation in the form of dewetting or wrinkling. The former takes place in fluidic films, whereas the latter occurs in solid films. Therefore, there have rarely been reports of systems involving simultaneous deformations of dewetting and wrinkling. In this study, we propose polymeric thin films of liquid crystalline (LC) mesogens prepared on a non-wettable Si substrate and apply a treatment of plasma irradiation to form a thin polymerized layer at the surface. The resulting compressive stress generated in the surface region drives the formation of wrinkles, while at the same time, dipolar attraction between LC molecules induces competitive cohesive dewetting. Intriguing surface structures were obtained whereby dewetting-like hole arrays are nested inside the randomly propagated wrinkles. The structural features are readily controlled by the degree of surface cross-linking, hydrophilicity of the substrates, and the LC film thickness. In particular, dewetting of LC mesogens is observed to be restricted to occur at the trough regions of wrinkles, exhibiting the typical behavior of geometrically confined dewetting. Finally, wrinkling-dewetting mixed structures are separated from the substrate in the form of free standing films to demonstrate the potential applicability as membranes.

  3. INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

    OpenAIRE

    BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

    2013-01-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

  4. Structural colors of the SiO2/polyethyleneimine thin films on poly(ethylene terephthalate) substrates

    International Nuclear Information System (INIS)

    Jia, Yanrong; Zhang, Yun; Zhou, Qiubao; Fan, Qinguo; Shao, Jianzhong

    2014-01-01

    The SiO 2 /polyethyleneimine (PEI) films with structural colors on poly(ethylene terephthalate) (PET) substrates were fabricated by an electrostatic self-assembly method. The morphology of the films was characterized by Scanning Electron Microscopy. The results showed that there was no distinguishable multilayered structure found of SiO 2 /PEI films. The optical behaviors of the films were investigated through the color photos captured by a digital camera and the color measurement by a multi-angle spectrophotometer. Different hue and brightness were observed at various viewing angles. The structural colors were dependent on the SiO 2 particle size and the number of assembly cycles. The mechanism of the structural colors generated from the assembled films was elucidated. The morphological structures and the optical properties proved that the SiO 2 /PEI film fabricated on PET substrate formed a homogeneous inorganic/organic SiO 2 /PEI composite layer, and the structural colors were originated from single thin film interference. - Highlights: • SiO 2 /PEI thin films were electrostatic self-assembled on PET substrates. • The surface morphology and optical behavior of the film were investigated. • The structural colors varied with various SiO 2 particle sizes and assembly cycles. • Different hue and lightness of SiO 2 /PEI film were observed at various viewing angles. • Structural color of the SiO 2 /PEI film originated from single thin film interference

  5. Preparation and Surface Analysis of PPY/SDBS Films on Aluminum Substrates

    Directory of Open Access Journals (Sweden)

    Lisete C. Scienza

    2001-09-01

    Full Text Available Polypyrrole films were generated on high purity aluminum substrates under anodic polarization from aqueous electrolytes comprised of pyrrole and sodium dodecylbenzene sulfonate. The methods employed to characterize the polymer films included scanning electron microscopy, Fourier-transform infrared and X-photoelectron spectroscopy and X-ray diffraction. PPY/SDBS films revealed nodular morphology with occasional appearing of "dendrites", high level of protonation, excess of counter-anions ([S]/[N] > [N+]/[N] and high degrees of disorder.

  6. Characteristics of Schottky-barrier source/drain metal-oxide-polycrystalline thin-film transistors on glass substrates

    International Nuclear Information System (INIS)

    Jung, Seung-Min; Cho, Won-Ju; Jung, Jong-Wan

    2012-01-01

    Polycrystalline-silicon (poly-Si) Schottky-barrier thin-film transistors (SB-TFTs) with Pt-silicided source /drain junctions were fabricated on glass substrates, and the electrical characteristics were examined. The amorphous silicon films on glass substrates were converted into high-quality poly-Si by using excimer laser annealing (ELA) and solid phase crystallization (SPC) methods. The crystallinity of poly-Si was analyzed by using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction analysis. The silicidation process was optimized by measuring the electrical characteristics of the Pt-silicided Schottky diodes. The performances of Pt-silicided SB-TFTs using poly-Si films on glass substrates and crystallized by using ELA and SPC were demonstrated. The SB-TFTs using the ELA poly-Si film demonstrated better electrical performances such as higher mobility (22.4 cm 2 /Vs) and on/off current ratio (3 x 10 6 ) and lower subthreshold swing value (120 mV/dec) than the SPC poly-Si films.

  7. Effect of substrate temperature and deposition rate on the morphology and optical properties of Ti films

    Energy Technology Data Exchange (ETDEWEB)

    Einollahzadeh-Samadi, M.; Dariani, R.S., E-mail: dariani@alzahra.ac.ir

    2013-09-01

    Titanium films are deposited on transparent fluorine-doped tin oxide (FTO) glass substrates by DC magnetron sputtering process. Influences imposed by sputtering rate and substrate temperature on surface morphology and optical properties of the deposited Ti films are investigated. We observed that all the sputtered films exhibit uniform and compact surface morphology without peeling and cracking. Morphology of the films is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD). The optical properties of the films are investigated using UV–vis spectroscopy. The morphological studies indicate that by increasing the substrate temperature from room temperature to 250 °C and/or decreasing sputtering rate from 660 Å/min to 540 Å/min the surface roughness decreased from 73.4 to 31.0 nm and the grain size increases from 50.76 nm to 163.93 nm. An important effect of the root mean square (RMS) surface roughness and grain size is modification of the films optical properties. In fact, an enhancement of refractive index n for the Ti films deposited at high substrate temperature and/or high deposition rate is observed, that is attributed to reduction of RMS roughness. This effect is attributed to increment of fractional volume which leads to an increase in density of deposited film. Thus, by controlling the sputtering conditions one can reach to the desired morphological and optical properties.

  8. Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

    International Nuclear Information System (INIS)

    Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.

    2013-01-01

    Diamond-like carbon (DLC) films deposited on SiO 2 /Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2 /Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I D /I G ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I D /I G ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp 3 site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp 3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO 2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape

  9. Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

    Science.gov (United States)

    Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

    2018-04-01

    Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

  10. Electrical contacts on polyimide substrates for flexible thin film photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Guillen, C.; Herrero, J

    2003-05-01

    Both frontal and back electrical contacts have been developed onto polyimide sheets (Kapton KJ[reg]) as alternative substrates to the conventional glasses, for application in lightweight and flexible thin film photovoltaic devices. Transparent and conductive indium tin oxide (ITO) thin films have been deposited by r.f.-magnetron sputtering as the frontal electrical contact. On the other hand, Mo, Cr and Ni layers have been prepared by e-gun evaporation for the back electrical connections. ITO films deposited onto polyimide have shown similar optical transmittance and higher electrical conductivity than onto glass substrates. The transmittance decreases and the conductivity increases after heating at 400 sign C in vacuum atmosphere. Mo, Cr and Ni layers deposited onto polyimide showed similar structure and electrical conductivity than onto conventional glasses. The properties of Mo and Cr layers remained unchanged after heating at 400 sign C in selenium atmosphere.

  11. Quantitative measurement of piezoelectric coefficient of thin film using a scanning evanescent microwave microscope.

    Science.gov (United States)

    Zhao, Zhenli; Luo, Zhenlin; Liu, Chihui; Wu, Wenbin; Gao, Chen; Lu, Yalin

    2008-06-01

    This article describes a new approach to quantitatively measure the piezoelectric coefficients of thin films at the microscopic level using a scanning evanescent microwave microscope. This technique can resolve 10 pm deformation caused by the piezoelectric effect and has the advantages of high scanning speed, large scanning area, submicron spatial resolution, and a simultaneous accessibility to many other related properties. Results from the test measurements on the longitudinal piezoelectric coefficient of PZT thin film agree well with those from other techniques listed in literatures.

  12. Out-of-substrate plane orientation control of thin YBa2Cu3O x films on NdGaO3 tilted-axes substrates

    International Nuclear Information System (INIS)

    Mozhaev, Peter B.; Mozhaeva, Julia E.; Bdikin, Igor K.; Kotelyanskii, Iosif M.; Lusanov, Valery A.; Hansen, Jorn Bindslev; Jacobsen, Claus S.; Kholkin, Andrey L.

    2006-01-01

    Epitaxial heterostructures YBa 2 Cu 3 O x (YBCO)/CeO 2 /NdGaO 3 were prepared on tilted-axes NdGaO 3 substrates using laser ablation technique. Morphology, crystal structure and electrical properties of the obtained films were characterized. The seeding mechanisms are affected by the tilt angle, resulting in superior YBCO films on NdGaO 3 substrates in an intermediate range of tilt angles of 6-14 o . The introduction of CeO 2 layer leads to change of the YBCO film orientation: at low deposition rate c-oriented films are formed, while at high deposition rates the film grows with c-axis tilted along the [1 1 0] NdGaO 3 direction. Bi-epitaxial films and structures were prepared by removal of part of the CeO 2 layer using ion-beam milling

  13. Internal friction study of microplasticity of aluminum thin films on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nishio, Y.; Tanahashi, K.; Asano, S. [Nagoya Institute of Technology, Nagoya (Japan)

    1995-12-01

    Internal friction in aluminum thin films 0.2 to 2.0 {mu}m thick on silicon substrates has been investigated between 180 and 360 K as a function of strain amplitude by means of a free-decay method of flexural vibration. According to the constitutive equation, the internal friction in the film alone can be evaluated separately from the data on the film/substrate composite. The amplitude-dependent part of internal friction in aluminum films is found in the strain range approximately two orders of magnitude higher than that for bulk aluminum. On the basis of the microplasticity theory, the amplitude-dependent internal friction can be converted into the plastic strain as a function of the effective stress on dislocation motion. The mechanical responses thus obtained for aluminum films show that the plastic strain of the order of 10-9 in creases nonlinearly with increasing stress. These curves tend to shift to a higher stress with decreasing film thickness and also with decreasing temperature, both indicating a suppression of the microplastic deformation. At all temperatures examined, the microflow stress at a constant level of the plastic strain varies inversely with the film thickness, which qualitatively agrees with the variation in macroscopic yield stress. 36 refs., 7 figs.

  14. Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

    Science.gov (United States)

    Riascos, H.; Duque, J. S.; Orozco, S.

    2017-01-01

    ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

  15. Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates

    International Nuclear Information System (INIS)

    Balasubramanian, K.R.; Chang, Kai-Chieh; Mohammad, Feroz A.; Porter, Lisa M.; Salvador, Paul A.; DiMaio, Jeffrey; Davis, Robert F.

    2006-01-01

    Epitaxial hexagonal YMnO 3 (h-YMnO 3 ) films having sharp (00l) X-ray diffraction peaks were grown above 700 deg. C in 5 mTorr O 2 via pulsed laser deposition both on as-received wurtzite GaN/AlN/6H-SiC(001) (w-GaN) substrates as well as on w-GaN surfaces that were etched in 50% HF solution. High-resolution transmission electron microscopy revealed an interfacial layer between film and the unetched substrate; this layer was absent in those samples wherein an etched substrate was used. However, the substrate treatment did not affect the epitaxial arrangement between the h-YMnO 3 film and w-GaN substrate. The epitaxial relationships of the h-YMnO 3 films with the w-GaN(001) substrate was determined via X-ray diffraction to be (001) YMnO 3 -parallel (001) GaN : [11-bar0] YMnO 3 -parallel [110] GaN ; in other words, the basal planes of the film and the substrate are aligned parallel to one another, as are the most densely packed directions in planes of the film and the substrate. Interestingly, this arrangement has a larger lattice mismatch than if the principal axes of the unit cells were aligned

  16. ZnO nanostructures induced by microwave plasma

    Directory of Open Access Journals (Sweden)

    Khaled A. Elsayed

    2015-07-01

    Full Text Available Microwave induced hydrogen plasma is used to fabricate ZnO thin films at low ambient gas pressure and controlled oxygen content in the gas mixture. The emission spectra have been observed. Optical emission spectroscopy was used to identify the chemical reaction mechanism. Structural quality of the so-obtained nanoparticles was studied by X-ray diffraction (XRD and high resolution scanning electron microscopy (SEM. SEM results showed that nanorods were formed in the process, and XRD results along with nanorod dimensions obtained from SEM are consistent with the formation of single and poly-crystalline ZnO nanorods. The alignment of these nanorods with respect to the substrates depends on the lattice mismatch between ZnO and the glass substrate. The minimum crystallite grain size as obtained from the SEM measurements was ∼24 nm and the average diameter is 70 nm with a length of 1–2 μm. The deposited ZnO thin films have a wide energy band gap that equals ∼3 eV.

  17. Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011)B3 single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Higuchi, Jumpei; Yabuhara, Osamu; Kirino, Fumiyoshi; Futamoto, Masaaki

    2011-01-01

    Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011) B3 single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar] bcc || GaAs(011)[011-bar] B3 . The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{011} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011) B3 substrates.

  18. Influence of Different Substrates on Laser Induced Damage Thresholds at 1064 nm of Ta2O5 Films

    International Nuclear Information System (INIS)

    Cheng, Xu; Jian-Yong, Ma; Yun-Xia, Jin; Hong-Bo, He; Jian-Da, Shao; Zheng-Xiu, Fan

    2008-01-01

    Ta 2 O 5 films are prepared on Si, BK7, fused silica, antireflection (AR) and high reflector (HR) substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds (LIDTs) at 1064 nm of Ta 2 O 5 films on different substrates are investigated before and after annealing at 673K for 12 h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta 2 O 5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta 2 O 5 films are mainly correlated with three parameters: substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed

  19. Radio frequency sputter deposition of high-quality conductive and transparent ZnO:Al films on polymer substrates for thin film solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)], E-mail: susanamaria.fernandez@ciemat.es; Martinez-Steele, A.; Gandia, J.J. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala. Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2009-03-31

    Thick aluminum-doped zinc oxide films were deposited at substrate temperatures from 100 {sup o}C to room temperature on polyethylene terephthalate by radio frequency magnetron sputtering, varying the deposition parameters such as radio frequency power and working pressure. Structural, optical and electrical properties were analyzed using an x-ray diffractometer, a spectrophotometer and a four-point probe, respectively. Films were polycrystalline showing a strong preferred c-axis orientation (002). The best optical and electrical results were achieved using a substrate temperature of 100 {sup o}C. Furthermore, high transmittances close to 80% in the visible wavelength range were obtained for those films deposited at the lowest Argon pressure used of 0.2 Pa. In addition, resistivities as low as 1.1 x 10{sup -3} {omega} cm were reached deposited at a RF power of 75 W. Finally, a comparison of the properties of the films deposited on polymer and glass substrates was performed, obtaining values of the figure of merit for the films on polymer comparable to those obtained on glass substrates, 17,700 {omega}{sup -1} cm{sup -1} vs 14,900 {omega}{sup -1} cm{sup -1}, respectively.

  20. Radio frequency sputter deposition of high-quality conductive and transparent ZnO:Al films on polymer substrates for thin film solar cells applications

    International Nuclear Information System (INIS)

    Fernandez, S.; Martinez-Steele, A.; Gandia, J.J.; Naranjo, F.B.

    2009-01-01

    Thick aluminum-doped zinc oxide films were deposited at substrate temperatures from 100 o C to room temperature on polyethylene terephthalate by radio frequency magnetron sputtering, varying the deposition parameters such as radio frequency power and working pressure. Structural, optical and electrical properties were analyzed using an x-ray diffractometer, a spectrophotometer and a four-point probe, respectively. Films were polycrystalline showing a strong preferred c-axis orientation (002). The best optical and electrical results were achieved using a substrate temperature of 100 o C. Furthermore, high transmittances close to 80% in the visible wavelength range were obtained for those films deposited at the lowest Argon pressure used of 0.2 Pa. In addition, resistivities as low as 1.1 x 10 -3 Ω cm were reached deposited at a RF power of 75 W. Finally, a comparison of the properties of the films deposited on polymer and glass substrates was performed, obtaining values of the figure of merit for the films on polymer comparable to those obtained on glass substrates, 17,700 Ω -1 cm -1 vs 14,900 Ω -1 cm -1 , respectively

  1. Thin film transistors on plastic substrates with reflective coatings for radiation protection

    Science.gov (United States)

    Wolfe, Jesse D [Fairfield, CA; Theiss, Steven D [Woodbury, MN; Carey, Paul G [Mountain View, CA; Smith, Patrick M [San Ramon, CA; Wickbold, Paul [Walnut Creek, CA

    2006-09-26

    Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

  2. Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

    Science.gov (United States)

    Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

    2018-01-01

    Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

  3. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kumar, A.; Voevodin, A.A.; Paul, R.; Altfeder, I.; Zemlyanov, D.; Zakharov, D.N.; Fisher, T.S.

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface

  4. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A., E-mail: kumar50@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, A.A. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Paul, R. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Altfeder, I. [Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Zemlyanov, D.; Zakharov, D.N. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Fisher, T.S., E-mail: tsfisher@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface.

  5. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  6. Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ananda Sagari, A.R., E-mail: arsagari@gmail.com [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Malm, Jari [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Laitinen, Mikko [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Rahkila, Paavo [Department of Biology of Physical Activity, P.O. Box 35, FIN-40014 University of Jyväskylä (Finland); Hongqiang, Ma [Department of Health Sciences, P.O. Box 35 (L), FIN-40014 University of Jyväskylä (Finland); Putkonen, Matti [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Beneq Oy, P.O. Box 262, FI-01511 Vantaa (Finland); Karppinen, Maarit [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Whitlow, Harry J.; Sajavaara, Timo [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland)

    2013-03-01

    Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R{sub rms} values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on rough metal surfaces with a clear dependence of substrate roughness on the Ca/P atomic ratio of thin films. The in vitro cell-culture studies using MC3T3 mouse osteoblast showed a greater coverage of cells on the surface polished with diamond paste in comparison to rougher surfaces after 24 h culture. No statistically significant difference was observed between Ca–P–O coated and un-coated Ti surfaces for the measured roughness value. The deposited 50 nm thick films did not dissolve during the cell culture experiment. - Highlights: ► Atomic layer deposition of Ca–P–O films on abraded Ti substrate ► Surface analysis using Time-Of-Flight Elastic Recoil Detection Analysis ► Dependence of substrate roughness on the Ca/P atomic ratio of thin films ► An increase in Ca/P atomic ratio with decreasing roughness ► Mouse osteoblast showed greater coverage of cells in polished surface.

  7. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  8. Experimental investigation on photoelectric properties of ZAO thin film deposited on flexible substrate by magnetron sputtering

    Science.gov (United States)

    Hao, Ming; Liu, Kun; Liu, Xinghua; Wang, Dongyang; Ba, Dechun; Xie, Yuanhua; Du, Guangyu; Ba, Yaoshuai

    2016-12-01

    Transparent conductive ZAO (Zinc Aluminum Oxide) films on flexible substrates have a great potential for low-cost mass-production solar cells. ZAO thin films were achieved on flexible PET (polyethylene terephthalate) substrates by RF magnetron sputtering technology. The surface morphology and element content, the transmittance and the sheet resistance of the films were measured to determine the optical process parameters. The results show that the ZAO thin film shows the best parameters in terms of photoelectric performance including sputtering power, working pressure, sputtering time, substrate temperature (100 W, 1.5 Pa, 60 min, 125 °C). The sheet resistance of 510 Ω and transmittance in visible region of 92% were obtained after characterization. Surface morphology was uniform and compact with a good crystal grain.

  9. Fabrication of single-phase ε-GaSe films on Si(100) substrate by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chia-Chen; Zeng, Jia-Xian; Lan, Shan-Ming [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Uen, Wu-Yih, E-mail: uenwuyih@ms37.hinet.net [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Liao, Sen-Mao [Department of Electronic Engineering, College of Electrical Engineering and Computer Science, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Tsun-Neng; Ma, Wei-Yang [Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan (China); Chang, Kuo-Jen [Chung-Shan Institute of Science and Technology, No.15, Shi Qi Zi, Gaoping Village, Longtan Township, Taoyuan County, Taiwan (China)

    2013-09-02

    Single-phase ε-gallium selenide (GaSe) films were fabricated on Si(100) substrate by metal organic chemical vapor deposition using dual-source precursors: triethylgallium (TEG) and hydrogen selenide (H{sub 2}Se) with the flow ratio of [H{sub 2}Se]/[TEG] being maintained at 1.2. In particular, an arsine (AsH{sub 3}) flow was introduced to the Si substrate before the film deposition to induce an arsenic (As)-passivation effect on the substrate. The crystalline structure of GaSe films prepared was analyzed using X-ray diffraction and the surface morphology of them was characterized by scanning electron microscopy. It was found that the film quality could be improved by the As-passivation effect. The optical properties of the films were studied by temperature dependent photoluminescence (PL) measurements. PL spectra obtained with different distributions and intensities favored for resolving the superior material quality of the films produced on the substrate with As-passivation compared to those produced on the substrate without As-passivation. The former was dominated by the excitonic emissions for the whole temperature range of 20–300 K examined, while the latter was initially dominated by the defect-related emission at 1.907 eV for a low-temperature range ≦ 80 K and then became dominated by the weak excitonic emission band instead. The ε modification of GaSe films prepared was further recognized by the Raman scattering measurements conducted at room temperature. - Highlights: • Gallium selenide (GaSe) layered structures are fabricated on Si(100) substrate. • Metal–organic chemical vapor deposition is used for film fabrication. • Arsenic-passivation effects of Si substrate on the GaSe film quality are analyzed. • Photoluminescence measurements of GaSe polycrystals are reported.

  10. Improved high-frequency soft magnetic properties of FeCo films on organic ferroelectric PVDF substrate

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dong; Wang, Zhen; Han, Xuemeng; Li, Yue; Guo, Xiaobin; Zuo, Yalu; Xi, Li, E-mail: xili@lzu.edu.cn

    2015-02-01

    FeCo films with various thicknesses were fabricated by direct-current magnetron sputtering on corning glass and organic ferroelectric PVDF substrates at the same time with 5 nm Ru seed layer and 5 nm Ta protective layer. The in-plane uniaxial anisotropy field of FeCo on glass substrate increases from 24 to 36 Oe with the increase of FeCo film thickness from 5 to 100 nm. However, a large in-plane anisotropy field of FeCo on PVDF substrate increases with FeCo thickness from 5 to 20 nm and gradually decreases with the FeCo thickness further increasing. Atomic force microscope images of FeCo on glass show quite smooth surface with root-mean-square roughness around 0.5 nm and have none visible granules on the surface for all samples. While, AFM images of FeCo on PVDF show quite rough surface with RMS roughness around 25 nm and have visible granules with the smallest granules appearing at the FeCo thickness of 20 nm. The permeability spectra show the typical ferromagnetic resonance phenomenon and can be well fitted by the LLG equation with the obtained experimental parameters. The ferromagnetic resonance frequency can reach 7.0 GHz for the 20 nm FeCo film on PVDF. Moreover, the quality factor of this sample can respectively reach 26, 12 and 7 at 1.0, 2.0, and 3.0 GHz, indicating the potential real 3G application for high-frequency devices. - Highlights: 1.Magnetic and morphological properties of FeCo films on PVDF substrates are studied. 2.The large anisotropy field of FeCo films on PVDF is obtained. 3.Improved high frequency properties of FeCo films on flexible substrates are obtained. 4.The origin of improved high frequency properties of FeCo films on PVDF is studied.

  11. Synthesis of LSM films deposited by dip-coating on YSZ substrate; Sintese de filmes de LSM depositados por dip-coating em substratos de YSZ

    Energy Technology Data Exchange (ETDEWEB)

    Conceicao, Leandro da; Souza, Mariana M.V.M., E-mail: mmattos@eq.ufrj.b [Universidade Federal do Rio de Janeiro (EQ/UFRJ), RJ (Brazil). Escola de Quimica; Ribeiro, Nielson F.P. [Coordenacao dos Programas de Pos-graduacao de Engenharia (PEQ/COPPE/UFRJ), Rio de Janeiro, RJ (Brazil). Programa de Engenharia Quimica. Nucleo de Catalise

    2010-07-01

    The dip-coating process was used to deposit films of La{sub 0.7}Sr{sub 0.}3MnO{sub 3} (LSM) used as cathode in solid oxide fuel cells (SOFC). In this study we evaluated the relationship between the deposition parameters such as speed of withdrawal and number of deposited layers of LSM film on a substrate of 8% YSZ commercial, and structural properties, such as thickness and formation of cracks. The structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). With parameters set the film had good adhesion to the substrate with a thickness around 10 {mu}m, showing possible adherence problems when more than one layer is deposited on the substrate. (author)

  12. High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.S., E-mail: wangssh@tsinghua.edu.cn [Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Beihang University), Ministry of Education, Beijing 100191 (China); Beijing Dingchen Superconducting Technology Co., Ltd., Beijing 100084 (China); Zhang, Z.L. [Key Laboratory of Micro-nano Measurement, Manipulation and Physics (Beihang University), Ministry of Education, Beijing 100191 (China); Wang, L. [Applied superconductivity research center, Department of Physics, Tsinghua University, Beijing 100084 (China); Gao, L.K.; Liu, J. [Beijing Dingchen Superconducting Technology Co., Ltd., Beijing 100084 (China)

    2017-03-15

    Highlights: • High quality double-sided YBCO films are fabricated on LaAlO3 substrates by TFA-MOD method with diameters up to 2 in. • Large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm{sup 2} and low R{sub s} (10 GHz) of 0.3 mΩ at 77 K were obtained. • It will greatly promoted the research and applications of large-area YBCO films by chemical solution method. - Abstract: A need exists for the large-area superconducting YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO{sub 3} substrates by TFA-MOD method. Inductive critical current densitiy J{sub c}, microwave surface resistance R{sub s}, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive J{sub c} in excess of 6 MA/cm{sup 2} with uniform distribution, and low R{sub s} (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

  13. ZnSe thin films by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Lokhande, C.D.; Patil, P.S.; Tributsch, H. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CS, Glienicker Strasse-100, D-14109 Berlin (Germany); Ennaoui, A. [Hahn-Meitner-Institute, Bereich Physikalische Chemie, Abt. CG, Glienicker Strasse-100, D-14109 Berlin (Germany)

    1998-09-04

    The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX, TRMC (time-resolved microwave conductivity), optical absorbance and RBS techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV

  14. Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

    Science.gov (United States)

    Hihath, Sahar

    Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

  15. Nonlinear Analysis of Actuation Performance of Shape Memory Alloy Composite Film Based on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Shuangshuang Sun

    2014-01-01

    Full Text Available The mechanical model of the shape memory alloy (SMA composite film with silicon (Si substrate was established by the method of mechanics of composite materials. The coupled action between the SMA film and Si substrate under thermal loads was analyzed by combining static equilibrium equations, geometric equations, and physical equations. The material nonlinearity of SMA and the geometric nonlinearity of bending deformation were both considered. By simulating and analyzing the actuation performance of the SMA composite film during one cooling-heating thermal cycle, it is found that the final cooling temperature, boundary condition, and the thickness of SMA film have significant effects on the actuation performance of the SMA composite film. Besides, the maximum deflection of the SMA composite film is affected obviously by the geometric nonlinearity of bending deformation when the thickness of SMA film is very large.

  16. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  17. Morphology evolution of thin Ni film on MgO(100) substrate

    International Nuclear Information System (INIS)

    Lin, C.; Xu, Y.H.; Naramoto, H.; Wei, P.; Kitazawa, S.; Narumi, K.

    2002-01-01

    Thin Ni films with various thicknesses were deposited onto the MgO(100) single crystal substrate at 400 deg. C. The morphology measured by atomic force microscope shows an apparent correlation with the thickness. The initial 10 A film is composed of small round Ni islands. In the 25 A film, pinholes with narrow size distribution occur, which show local periodic distribution in some regions when the thickness of the film reaches 75 A. The driving force for such a structure is attributed to the elastic strain energy. When the film is about 100 A thick, the pinholes begin to disappear, due to filling by the late-coming atoms and covering of upper islands. (author)

  18. Joining of thermoplastic substrates by microwaves

    Science.gov (United States)

    Paulauskas, Felix L.; Meek, Thomas T.

    1997-01-01

    A method for joining two or more items having surfaces of thermoplastic material includes the steps of depositing an electrically-conductive material upon the thermoplastic surface of at least one of the items, and then placing the other of the two items adjacent the one item so that the deposited material is in intimate contact with the surfaces of both the one and the other items. The deposited material and the thermoplastic surfaces contacted thereby are then exposed to microwave radiation so that the thermoplastic surfaces in contact with the deposited material melt, and then pressure is applied to the two items so that the melted thermoplastic surfaces fuse to one another. Upon discontinuance of the exposure to the microwave energy, and after permitting the thermoplastic surfaces to cool from the melted condition, the two items are joined together by the fused thermoplastic surfaces. The deposited material has a thickness which is preferably no greater than a skin depth, .delta..sub.s, which is related to the frequency of the microwave radiation and characteristics of the deposited material in accordance with an equation.

  19. Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

    International Nuclear Information System (INIS)

    Yuan, Feifei; Shi, Zhixiang; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Hühne, Ruben; Schultz, Ludwig; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina

    2015-01-01

    FeSe 0.5 Te 0.5 thin films were grown by pulsed laser deposition on CaF 2 , LaAlO 3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe 0.5 Te 0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density J c (θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no J c (θ) peaks for H||c were observed in films on CaF 2 and LaAlO 3 . J c (θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg–Landau approach with appropriate anisotropy ratio γ J . The scaling parameter γ J is decreasing with decreasing temperature, which is different from what we observed in FeSe 0.5 Te 0.5 films on Fe-buffered MgO substrates. (paper)

  20. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    International Nuclear Information System (INIS)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-01-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  1. Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

    International Nuclear Information System (INIS)

    Meral, Kadem; Arik, Mustafa; Onganer, Yavuz

    2016-01-01

    Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

  2. Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Meral, Kadem, E-mail: kademm@atauni.edu.tr; Arik, Mustafa, E-mail: marik@tatauni.edu.tr; Onganer, Yavuz, E-mail: yonganer@atauni.edu.tr [Department of Chemistry, Faculty of Sciences, Atatürk University, 25240 Erzurum (Turkey)

    2016-04-18

    Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

  3. Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

    International Nuclear Information System (INIS)

    Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

    2007-01-01

    A mathematical model is developed to analyze the growth/decay rate of surface perturbations of an ultrathin metal film on an amorphous substrate (SiO 2 ). The formulation combines the approach of Mullins [W. W. Mullins, J. Appl. Phys. 30, 77 (1959)] for bulk surfaces, in which curvature-driven mass transport and surface deformation can occur by surface/volume diffusion and evaporation-condensation processes, with that of Spencer et al. [B. J. Spencer, P. W. Voorhees, and S. H. Davis, Phys. Rev. Lett. 67, 26 (1991)] to describe solid-state transport in thin films under epitaxial strain. Modifications of the Mullins model to account for thin-film boundary conditions result in qualitatively different dispersion relationships especially in the limit as kh o o is the unperturbed film height. The model is applied to study the relative rate of solid-state mass transport as compared to that of liquid phase dewetting in a thin film subjected to a fast thermal pulse. Specifically, we have recently shown that multiple cycles of nanosecond (ns) pulsed laser melting and resolidification of ultrathin metal films on amorphous substrates can lead to the formation of various types of spatially ordered nanostructures [J. Trice, D. Thomas, C. Favazza, R. Sureshkumar, and R. Kalyanaraman, Phys. Rev. B 75, 235439 (2007)]. The pattern formation has been attributed to the dewetting of the thin film by a hydrodynamic instability. In such experiments the film is in the solid state during a substantial fraction of each thermal cycle. However, results of a linear stability analysis based on the aforementioned model suggest that solid-state mass transport has a negligible effect on morphological changes of the surface. Further, a qualitative analysis of the effect of thermoelastic stress, induced by the rapid temperature changes in the film-substrate bilayer, suggests that stress relaxation does not appreciably contribute to surface deformation. Hence, surface deformation caused by liquid

  4. Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

    OpenAIRE

    Heimdal, Carl Philip J

    2014-01-01

    The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

  5. Pulsed laser deposition of SiC thin films at medium substrate temperatures

    International Nuclear Information System (INIS)

    Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

    2008-01-01

    Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

  6. Enhancement of c-axis texture of AlN films by substrate implantation

    International Nuclear Information System (INIS)

    Chen, C.H.; Yeh, J.M.; Hwang, J.

    2005-01-01

    Highly oriented AlN films are successfully deposited on B + implanted Si(1 1 1) substrates in a radio frequency inductively coupled plasma (RF/ICP) system. The implanted energy and dose used for the B + implanted Si(1 1 1) substrates are 200 keV and 10 15 cm -2 , respectively. The c-axis texture of AlN films can be affected by RF gun power and ion implantation. Experimental results show that the full width at half-maximum (FWHM) of AlN(0 0 2) in the X-ray rocking curve measurements decreases with increasing RF gun power. The optimum condition is at 500 W, where the FWHM of the AlN films deposited on Si(1 1 1) with and without B + implantation are 2.77 and 3.17, respectively. In average, the FWHM of the AlN films on B + implanted Si(1 1 1) are less than those on Si(1 1 1) by a factor of ∼10%. The enhancement of c-axis of AlN films due to B + implantation is attributed to the reduction of AlN grains. Raman spectra also suggest that ion implantation plays a role in reducing the tensile stress in AlN films deposited on B + implanted Si(1 1 1)

  7. Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

    DEFF Research Database (Denmark)

    Huhtinen, H.; Irjala, M.; Paturi, P.

    2010-01-01

    The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

  8. Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chen, Y.Y.; Yang, J.R.; Cheng, S.L.; Shiojiri, M.

    2013-01-01

    ZnO:Al films 400 nm thick were prepared on (100) Si substrates by magnetron sputtering. Energy dispersive X-ray spectroscopy and transmission electron microscopy (TEM) revealed that in the initial stage of the deposition, an amorphous silicon oxide layer about 4 nm thick formed from damage to the Si substrate due to sputtered particle bombardment and the incorporation of Si atoms with oxygen. Subsequently, a crystalline Si (Zn) layer about 30 nm thick grew on the silicon oxide layer by co-deposition of Si atoms sputtered away from the substrate with Zn atoms from the target. Finally, a ZnO:Al film with columnar grains was deposited on the Si (Zn) layer. The sputtered particle bombardment greatly influenced the structure of the object films. The (0001) lattice fringes of the ZnO:Al film were observed in high-resolution TEM images, and the forbidden 0001 reflection spots in electron diffraction patterns were attributed to double diffraction. Therefore, the appearance of the forbidden reflection did not imply any ordering of Al atoms and/or O vacancies in the ZnO:Al film. - Highlights: • ZnO:Al films were deposited on (100) Si substrate using magnetron sputtering. • An amorphous silicon oxide layer with a thickness of 4 nm was formed on Si substrate. • Crystalline Si (Zn) layer about 30 nm thick grew on amorphous silicon oxide layer. • ZnO:Al film comprising columnar grains was deposited on the Si(Zn) layer. • Lattice image of the ZnO:Al film has been interpreted

  9. Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi, E-mail: nukaga@futamoto.elect.chuo-u.ac.j [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

    2010-01-01

    Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 {sup 0}C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90{sup 0} each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

  10. Microstructure of Co(112-bar 0) epitaxial thin films, grown on MgO(100) single-crystal substrates

    International Nuclear Information System (INIS)

    Nukaga, Yuri; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Co(112-bar 0) epitaxial thin films with hcp structure were prepared on MgO(100) single-crystal substrates heated at 300 0 C by ultra high vacuum molecular beam epitaxy. The microstructure is investigated by employing X-ray diffraction and high-resolution transmission electron microscopy. The film consists of two types of domains whose c-axes are rotated around the film normal by 90 0 each other. Stacking faults are observed for the film along the Co[0001] direction. An atomically sharp boundary is recognized between the film and the substrate, where some misfit dislocations are introduced in the film at the Co/MgO interface. Dislocations are also observed in the film up to 15 nm thickness from the interface. Presence of such stacking faults and misfit dislocations seem to relieve the strain caused by the lattice mismatch between the film and the substrate. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the film are in agreement within 0.5% and 0.1%, respectively, with those of the bulk hcp-Co crystal, suggesting the strain in the film is very small.

  11. Effect of sputtering parameters and substrate composition on the structure of tantalum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hallmann, Lubica, E-mail: lubica.hallmann@zzm.uzh.c [Clinic of Fixed and Removable Prosthodontics and Dental Material Science, Center of Dental Medicine, University of Zürich (Switzerland); Ulmer, Peter [Institute of Geochemistry and Petrology, ETH Zürich (Switzerland)

    2013-10-01

    The crystallographic properties of tantalum films deposited as a bioactive coating on Co–Cr–Mo and Ti–Al–Nb alloys have been investigated. The desired tough and ductile alpha phase of tantalum has been obtained by DC magnetron sputtering on Co–Cr–Mo and Ti–Al–Nb substrates. The thickness of the tantalum layer was between 20 and 600 nm. The crystallographic structure of tantalum thin film was dependent on the sputtering parameters such as DC power, bias voltage and gas impurities. Oxygen is an important factor for the stabilization of the tantalum alpha phase on Co–Cr–Mo substrate. The crystallographic structure and texture of tantalum thin films was found to be additionally dependent on the substrate composition. For Ti–Al–Nb substrate, oxygen content was not an important factor for the stabilization of the alpha phase. The observed shift of X-ray diffraction peaks to lower 2(θ) is an indication of stress evolving during the sputtering process and was dependent on bias voltage and oxygen content of the carrier gas.

  12. Influence of the Hydrothermal Method Growth Parameters on the Zinc Oxide Nanowires Deposited on Several Substrates

    Directory of Open Access Journals (Sweden)

    Concepción Mejía-García

    2014-01-01

    Full Text Available We report the synthesis of ZnO nanowires grown on several substrates (PET, glass, and Si using a two-step process: (a preparation of the seed layer on the substrate by spin coating, from solutions of zinc acetate dihydrate and 1-propanol, and (b growth of the ZnO nanostructures by dipping the substrate in an equimolar solution of zinc nitrate hexahydrate and hexamethylenetetramine. Subsequently, films were thermally treated with a commercial microwave oven (350 and 700 W for 5, 20, and 35 min. The ZnO nanowires obtained were characterized structurally, morphologically, and optically using XRD, SEM, and UV-VIS transmission, respectively. XRD patterns spectra revealed the presence of Zn(OH2 on the films grown on glass and Si substrates. A preferential orientation along c-axis directions for films grown on PET substrate was observed. An analysis by SEM revealed that the growth of the ZnO nanowires on PET and glass is better than the growth on Si when the same growth parameters are used. On glass substrates, ZnO nanowires less than 50 nm in diameter and between 200 nm and 1200 nm in length were obtained. The ZnO nanowires band gap energy for the films grown on PET and glass was obtained from optical transmission spectra.

  13. Effect of substrate on excess electrical conductivity in thin superconducting lead films above the transition temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ashwini Kumar, P K

    1976-03-01

    Measurements were made on Pb films grown directly on to glass and Pb films grown on glass precoated with LiF to investigate the effect of the substrate on thermodynamic fluctuations of Cooper pairs. A change in the substrate appears to alter the strength of the pair breaking mechanism. 17 references.

  14. Investigation of growth, structural and electronic properties of V2O3 thin films on selected substrates

    International Nuclear Information System (INIS)

    Nateprov, Alexei

    2006-08-01

    The present work is devoted to the experimental study of the MI transition in V 2 O 3 thin films, grown on different substrates. The main goal of the work was to develop a technology of growth of V 2 O 3 thin films on substrates with different electrical and structural properties (diamond and LiNbO 3 ), designed for specific applications. The structural and electrical properties of the obtained films were characterized in detail with a special focus on their potential applications. The MIT of V 2 O 3 was investigated by SAW using first directly deposited V 2 O 3 thin film onto a LiNbO 3 substrate. (orig.)

  15. Low-temperature (200 C or below) fabrication of diamond films for electronic application

    International Nuclear Information System (INIS)

    Hiraki, A.

    2003-01-01

    Fabrication of Diamond (including Diamond Like Carbon: DLC) films as electronic materials, for example: to be used as electron-emitter, requires several following conditions. They are: 1 ) Low temperature fabrication (or deposition on several substrates and sometimes ones with low melting point, like glasses) below 400 C, 2) Wide area film deposition onto wide substrates of several square inches, like Si wafer and glass substrate, 3) Reproducible deposition of well defined film quality, 4) others. In these respects, we have initiated, in the author's laboratories at Osaka University and Kochi University of Technology, a quite new approach to satisfy the above requirements by using microwave plasma CVD under a magnetic field to be called as m agneto-active plasma CVD . The films fabricated by the magnets-active plasma CVD and also recently by cathodic arc methods combined with cur special nano-seeding method, have been utilized for electron emitter to exhibit very high efficiency. (Author)

  16. Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

    KAUST Repository

    Stavarache, Ionel

    2017-07-21

    Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling of nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. It is reported here the significant progress introduced by synthesis procedure to the in-situ structuring of Ge nanocrystallites in SiO2 thin films by heating the substrate at low temperature, 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency of 850 %. This simple preparation approach brings an important contribution to the efort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

  17. Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

    Science.gov (United States)

    Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

    2017-10-01

    Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

  18. Large-grain polycrystalline silicon film by sequential lateral solidification on a plastic substrate

    International Nuclear Information System (INIS)

    Kim, Yong-Hae; Chung, Choong-Heui; Yun, Sun Jin; Moon, Jaehyun; Park, Dong-Jin; Kim, Dae-Won; Lim, Jung Wook; Song, Yoon-Ho; Lee, Jin Ho

    2005-01-01

    A large-grain polycrystalline silicon film was obtained on a plastic substrate by sequential lateral solidification. With various combinations of sputtering powers and Ar working gas pressures, the conditions for producing dense amorphous silicon (a-Si) and SiO 2 films were optimized. The successful crystallization of the a-Si film is attributed to the production of a dense a-Si film that has low argon content and can endure high-intensity laser irradiation

  19. F-doped SnO2 thin films grown on flexible substrates at low temperatures by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, H.; Auyeung, R.C.Y.; Pique, A.

    2011-01-01

    Fluorine-doped tin oxide (SnO 2 :F) films were deposited on polyethersulfone plastic substrates by pulsed laser deposition. The electrical and optical properties of the SnO 2 :F films were investigated as a function of deposition conditions such as substrate temperature and oxygen partial pressure during deposition. High quality SnO 2 :F films were achieved under an optimum oxygen pressure range (7.4-8 Pa) at relatively low growth temperatures (25-150 deg. C). As-deposited films exhibited low electrical resistivities of 1-7 mΩ-cm, high optical transmittance of 80-90% in the visible range, and optical band-gap energies of 3.87-3.96 eV. Atomic force microscopy measurements revealed a reduced root mean square surface roughness of the SnO 2 :F films compared to that of the bare substrates indicating planarization of the underlying substrate.

  20. Evolution de films de cuivre sur un substrat de cordiérite au cours de traitements thermiques

    Science.gov (United States)

    Guille, Jean-Louis; Gondolf, Marc

    1993-04-01

    Copper films were applied on low sintering temperature cordierite substrates either by sputtering or screen printing. Their behaviour during thermal treatments was studied as a function of various parameters : deposition technique, thickness, firing atmosphere, physical state of the substrate (green or sintered). Films were most often broken during the treatment. In the case of screen printed films the effects of an oxydation-reduction cycle of copper are pointed out. Des films de cuivre ont été déposés sur un substrat de cordiérite à basse température de frittage par deux techniques, pulvérisation cathodique et sérigraphie. On étudie leur comportement au cours de traitements thermiques en fonction de différents paramètres : technique de déposition, épaisseur, atmosphère de traitement, état physique du substrat (cru ou fritté). On constate le plus souvent une fragmentation du film. Dans le cas des films sérigraphiés on met en évidence les effets dus à l'oxydation et à la réduction du cuivre.

  1. Three-dimensional growth simulation: A study of substrate oriented films

    International Nuclear Information System (INIS)

    Besnard, A; Martin, N; Carpentier, L

    2010-01-01

    Monte Carlo simulations are developed to simulate the growth of three-dimensional columnar microstructure in thin films. We are studying in particular oriented microstructure like those produced with the Glancing Angle Deposition technique (GLAD). Some geometrical characteristics of the particles flux, the organization of defect sites on the substrate surface and the atomic surface diffusion are mainly investigated in order to predict the growth processes and the resulting features of the films. This study reports on simulations of thin film growth exhibiting an oblique and zigzag columnar microstructure. Column angle evolution and density are investigated versus incidence angle α or period number n and compared with experimental measurements.

  2. Orthorhombic polar Nd-doped BiFeO{sub 3} thin film on MgO substrate

    Energy Technology Data Exchange (ETDEWEB)

    Leontyev, I N; Janolin, P-E; Dkhil, B [Laboratoire Structures, Proprietes et Modelisation des Solides, UMR CNRS-Ecole Centrale Paris, 92295 Chatenay-Malabry Cedex (France); Yuzyuk, Yu I [Faculty of Physics, Southern Federal University, Zorge 5, Rostov-on-Don 344090 (Russian Federation); El-Marssi, M [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France); Chernyshov, D; Dmitriev, V [Swiss-Norwegian Beam Lines at ESRF, Boite Postale 220, F-38043 Grenoble (France); Golovko, Yu I; Mukhortov, V M, E-mail: i.leontiev@rambler.ru [Southern Scientific Center RAS, Rostov-on-Don, 344006 (Russian Federation)

    2011-08-24

    A Nd-doped BiFeO{sub 3} thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45{sup 0} with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

  3. The effect of substrate on thermodynamic and kinetic anisotropies in atomic thin films

    International Nuclear Information System (INIS)

    Haji-Akbari, Amir; Debenedetti, Pablo G.

    2014-01-01

    Glasses have a wide range of technological applications. The recent discovery of ultrastable glasses that are obtained by depositing the vapor of a glass-forming liquid onto the surface of a cold substrate has sparked renewed interest in the effects of confinements on physicochemical properties of liquids and glasses. Here, we use molecular dynamics simulations to study the effect of substrate on thin films of a model glass-forming liquid, the Kob-Andersen binary Lennard-Jones system, and compute profiles of several thermodynamic and kinetic properties across the film. We observe that the substrate can induce large oscillations in profiles of thermodynamic properties such as density, composition, and stress, and we establish a correlation between the oscillations in total density and the oscillations in normal stress. We also demonstrate that the kinetic properties of an atomic film can be readily tuned by changing the strength of interactions between the substrate and the liquid. Most notably, we show that a weakly attractive substrate can induce the emergence of a highly mobile region in its vicinity. In this highly mobile region, structural relaxation is several times faster than in the bulk, and the exploration of the potential energy landscape is also more efficient. In the subsurface region near a strongly attractive substrate, however, the dynamics is decelerated and the sampling of the potential energy landscape becomes less efficient than the bulk. We explain these two distinct behaviors by establishing a correlation between the oscillations in kinetic properties and the oscillations in lateral stress. Our findings offer interesting opportunities for designing better substrates for the vapor deposition process or developing alternative procedures for situations where vapor deposition is not feasible

  4. The effect of substrate on thermodynamic and kinetic anisotropies in atomic thin films.

    Science.gov (United States)

    Haji-Akbari, Amir; Debenedetti, Pablo G

    2014-07-14

    Glasses have a wide range of technological applications. The recent discovery of ultrastable glasses that are obtained by depositing the vapor of a glass-forming liquid onto the surface of a cold substrate has sparked renewed interest in the effects of confinements on physicochemical properties of liquids and glasses. Here, we use molecular dynamics simulations to study the effect of substrate on thin films of a model glass-forming liquid, the Kob-Andersen binary Lennard-Jones system, and compute profiles of several thermodynamic and kinetic properties across the film. We observe that the substrate can induce large oscillations in profiles of thermodynamic properties such as density, composition, and stress, and we establish a correlation between the oscillations in total density and the oscillations in normal stress. We also demonstrate that the kinetic properties of an atomic film can be readily tuned by changing the strength of interactions between the substrate and the liquid. Most notably, we show that a weakly attractive substrate can induce the emergence of a highly mobile region in its vicinity. In this highly mobile region, structural relaxation is several times faster than in the bulk, and the exploration of the potential energy landscape is also more efficient. In the subsurface region near a strongly attractive substrate, however, the dynamics is decelerated and the sampling of the potential energy landscape becomes less efficient than the bulk. We explain these two distinct behaviors by establishing a correlation between the oscillations in kinetic properties and the oscillations in lateral stress. Our findings offer interesting opportunities for designing better substrates for the vapor deposition process or developing alternative procedures for situations where vapor deposition is not feasible.

  5. The effect of substrate on thermodynamic and kinetic anisotropies in atomic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Haji-Akbari, Amir; Debenedetti, Pablo G., E-mail: pdebene@exchange.princeton.edu [Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-07-14

    Glasses have a wide range of technological applications. The recent discovery of ultrastable glasses that are obtained by depositing the vapor of a glass-forming liquid onto the surface of a cold substrate has sparked renewed interest in the effects of confinements on physicochemical properties of liquids and glasses. Here, we use molecular dynamics simulations to study the effect of substrate on thin films of a model glass-forming liquid, the Kob-Andersen binary Lennard-Jones system, and compute profiles of several thermodynamic and kinetic properties across the film. We observe that the substrate can induce large oscillations in profiles of thermodynamic properties such as density, composition, and stress, and we establish a correlation between the oscillations in total density and the oscillations in normal stress. We also demonstrate that the kinetic properties of an atomic film can be readily tuned by changing the strength of interactions between the substrate and the liquid. Most notably, we show that a weakly attractive substrate can induce the emergence of a highly mobile region in its vicinity. In this highly mobile region, structural relaxation is several times faster than in the bulk, and the exploration of the potential energy landscape is also more efficient. In the subsurface region near a strongly attractive substrate, however, the dynamics is decelerated and the sampling of the potential energy landscape becomes less efficient than the bulk. We explain these two distinct behaviors by establishing a correlation between the oscillations in kinetic properties and the oscillations in lateral stress. Our findings offer interesting opportunities for designing better substrates for the vapor deposition process or developing alternative procedures for situations where vapor deposition is not feasible.

  6. Coupling of microwave magnetic dynamics in thin ferromagnetic films to stripline transducers in the geometry of the broadband stripline ferromagnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Kostylev, M., E-mail: mikhail.kostylev@uwa.edu.au [School of Physics, The University of Western Australia, Crawley 6009 (Australia)

    2016-01-07

    We constructed a quasi-analytical self-consistent model of the stripline-based broadband ferromagnetic resonance (FMR) measurements of ferromagnetic films. Exchange-free description of magnetization dynamics in the films allowed us to obtain simple analytical expressions. They enable quick and efficient numerical simulations of the dynamics. With this model, we studied the contribution of radiation losses to the ferromagnetic resonance linewidth, as measured with the stripline FMR. We found that for films with large conductivity of metals the radiation losses are significantly smaller than for magneto-insulating films. Excitation of microwave eddy currents in these materials contributes to the total microwave impedance of the system. This leads to impedance mismatch with the film environment resulting in decoupling of the film from the environment and, ultimately, to smaller radiation losses. We also show that the radiation losses drop with an increase in the stripline width and when the sample is lifted up from the stripline surface. Hence, in order to eliminate this measurement artefact, one needs to use wide striplines and introduce a spacer between the film and the sample surface. The radiation losses contribution is larger for thicker films.

  7. Study on Buckling of Stiff Thin Films on Soft Substrates as Functional Materials

    Science.gov (United States)

    Ma, Teng

    In engineering, buckling is mechanical instability of walls or columns under compression and usually is a problem that engineers try to prevent. In everyday life buckles (wrinkles) on different substrates are ubiquitous -- from human skin to a rotten apple they are a commonly observed phenomenon. It seems that buckles with macroscopic wavelengths are not technologically useful; over the past decade or so, however, thanks to the widespread availability of soft polymers and silicone materials micro-buckles with wavelengths in submicron to micron scale have received increasing attention because it is useful for generating well-ordered periodic microstructures spontaneously without conventional lithographic techniques. This thesis investigates the buckling behavior of thin stiff films on soft polymeric substrates and explores a variety of applications, ranging from optical gratings, optical masks, energy harvest to energy storage. A laser scanning technique is proposed to detect micro-strain induced by thermomechanical loads and a periodic buckling microstructure is employed as a diffraction grating with broad wavelength tunability, which is spontaneously generated from a metallic thin film on polymer substrates. A mechanical strategy is also presented for quantitatively buckling nanoribbons of piezoelectric material on polymer substrates involving the combined use of lithographically patterning surface adhesion sites and transfer printing technique. The precisely engineered buckling configurations provide a route to energy harvesters with extremely high levels of stretchability. This stiff-thin-film/polymer hybrid structure is further employed into electrochemical field to circumvent the electrochemically-driven stress issue in silicon-anode-based lithium ion batteries. It shows that the initial flat silicon-nanoribbon-anode on a polymer substrate tends to buckle to mitigate the lithiation-induced stress so as to avoid the pulverization of silicon anode. Spontaneously

  8. Pattern interpolation in thin films of lamellar, symmetric copolymers on nano-patterned substrates

    Science.gov (United States)

    Detcheverry, Francois; Nagpal, Umang; Liu, Guoliang; Nealey, Paul; de Pablo, Juan

    2009-03-01

    A molecular model of block copolymer systems is used to conduct a systematic study of the morphologies that arise when thin films of symmetric, lamellar forming block copolymer materials are deposited on nanopatterned surfaces. Over 500 distinct cases are considered. It is found that, in general, three distinct morphologies can arise depending on the strength of the substrate-polymer interactions, the film thickness, and the period of the substrate pattern. The relative stability of those morphologies is determined by direct calculation of the free energy differences. The dynamic propensity of those morphologies to emerge is examined by careful analysis of simulated trajectories. The results of this systematic study are used to interpret recent experimental data for films of polystyrene-PMMA copolymers on chemically nanopatterned surfaces.

  9. Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO{sub 2} substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Wang, Chao, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn; Diao, Dongfeng, E-mail: cwang367@szu.edu.cn, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2016-08-01

    We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO{sub 2} substrate. The etching mechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO{sub 2}, and then triggered the carbon film reacting with oxygen from the SiO{sub 2} substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to the fabrication of nanodevices and nanosurfaces.

  10. Preparation and characterization of electrochemically deposited carbon nitride films on silicon substrate

    International Nuclear Information System (INIS)

    Yan Xingbin; Xu Tao; Chen Gang; Yang Shengrong; Liu Huiwen; Xue Qunji

    2004-01-01

    Carbon nitride films (CN x films) were deposited on Si(100) substrates by the electrolysis of methanol-urea solution at high voltage, atmospheric pressure, and low temperature. The microstructure and morphology of the resulting CN x films were analysed by means of Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectrometry (FTIR), x-ray diffraction (XRD), and atomic force microscopy. The tribological properties of the CN x films were examined on an UMT-2MT friction and wear test rig. The Raman spectrum showed two characteristic bands: a graphite G band and a disordered D band of carbon, which suggested the presence of an amorphous carbon matrix. XPS and FTIR measurements suggested the existence of both single and double carbon-nitride bonds in the film and the hydrogenation of the carbon nitride phase. The XRD spectrum showed various peaks of different d values, which could confirm the existence of the polycrystalline carbon nitride phase. The hydrogenated CN x films were compact and uniform, with a root mean square roughness of about 18 nm. The films showed excellent friction-reduction and wear-resistance, with the friction coefficient in the stable phase being about 0.08. In addition, the growth mechanism of the CN x films in liquid phase electro-deposition was discussed as well. It was assumed that the molecules of CH 3 OH and CO(NH 2 ) 2 were polarized under high electric field, and the CN x film was formed on the substrate through the reaction of the -CH 3 and -NH 2 groups on the cathode

  11. Experimental study on tensile bifurcation of nanoscale Cu film bonded to polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Men, Yutao; Wang, Shibin; Jia, Haikun; Wu, Zhiliang; Li, Linan; Zhang, Chunqiu

    2013-01-01

    Cu films are widely used in flexible electronic products. Tensile mechanical properties of the film determine product performance. In this paper, tensile experiments of sputtered Cu films on a polyethylene terephthalate (PET) substrate were carried out under an optical microscope. In the experiments, three changes took place under tension: uniform deformation, microcrack initiation and propagation, and microcrack saturation. The elastic modulus of the Cu film is 120 GPa and is independent of film thickness since the film is formed to be continuous in the nanoscale range. Film thickness is an important parameter to decide the tensile properties. The critical fracture strain, the interfacial bonding strength, and the crack spacing after saturation are related to film thickness. The critical strain and the interfacial bonding strength of the nanoscale Cu film tend to ascend then to descend as film thickness increases. The microcrack spacing is in direct proportion to film thickness after the microcrack saturates. The optimum thickness of the sputtered Cu films on the PET substrate is about 500 nm. - Highlights: • The elastic modulus of the Cu films is 120 GPa and does not change with thickness. • The optimal thickness of the Cu films is about 500 nm. • The critical strain tends to ascend then to descend as film thickness increases. • The interfacial strength changes in accordance with the critical strain. • Microcrack spacing is proportional to film thickness after the microcrack saturates

  12. Effects of vacuum processing erbium dideuteride/ditritide films deposited on chromium underlays on copper substrates

    International Nuclear Information System (INIS)

    Provo, J.L.

    1978-01-01

    Thin films of erbium dideuteride/ditritide were experimentally produced on chromium underlays deposited on copper substrates. The chromium underlay is required to prevent erbium occluder/copper substrate alloying which inhibits hydriding. Data taken has shown that vacuum processing affects the erbium/chromium/copper interaction. With an in situ process in which underlay/occluder films are vacuum deposited onto copper substrates and hydrided with no air exposure between these steps, data indicates a minimum of 1500A of chromium is required for optimum hydriding. If films are vacuum deposited as above and air-exposed before hydriding, a minimum of 3000A of chromium was shown to be required for equivalent hydriding. Data suggests that the activation step (600 0 C for 1 hour) required for hydriding the film of the second type is responsible for the difference observed. Such underlay thickness parameters are important, with regard to heat transfer considerations in thin hydride targets used for neutron generation

  13. Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates.

    Science.gov (United States)

    Burrows, Christopher W; Dobbie, Andrew; Myronov, Maksym; Hase, Thomas P A; Wilkins, Stuart B; Walker, Marc; Mudd, James J; Maskery, Ian; Lees, Martin R; McConville, Christopher F; Leadley, David R; Bell, Gavin R

    2013-11-06

    Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.

  14. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  15. Thermal diffusivity of diamond films using a laser pulse technique

    International Nuclear Information System (INIS)

    Albin, S.; Winfree, W.P.; Crews, B.S.

    1990-01-01

    Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective inplane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film

  16. Interfacial Effects on the Spherulitic Morphology of Isotactic Polystyrene Thin Films on Liquid Substrates

    Directory of Open Access Journals (Sweden)

    Takashi Sasaki

    2016-01-01

    Full Text Available The influence of interfaces on the morphology of flat spherulites of isotactic polystyrene (iPS grown in thin films on liquid substrates was investigated. Amorphous iPS thin films spin-cast from a solution were annealed for cold crystallization on glycerol and silicone oil (nonsolvents for iPS. The number density of grown spherulites was revealed to be higher on the glycerol substrate than on the silicone oil substrate. This implies that the primary nucleation rate of crystallization is greater at the iPS/glycerol interface than at the iPS/silicone oil interface. The results may be consistent with the previous findings that concern the molecular interaction between atactic polystyrene and nonsolvents at the interface. In some cases, holes were formed in the thin films during the cold crystallization due to dewetting, which also significantly affect the spherulite morphology via, for example, transcrystallization.

  17. F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

    International Nuclear Information System (INIS)

    Xu, M.Y.; Li, J.; Herman, P.R.; Lilge, L.D.

    2006-01-01

    This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F 2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm 2 to an optimized single pulse fluence of 4.5 J/cm 2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F 2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. (orig.)

  18. Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

    Science.gov (United States)

    Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

    2017-07-01

    We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

  19. Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism

    Science.gov (United States)

    Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

    2014-03-01

    Three types of manganese oxide films were grown on MgAl2O4 (001) substrates by plasma-assisted molecular beam epitaxy (PA-MBE) under different growth rates and substrate temperatures. The structural characteristics and chemical compositions of the films were investigated by using in-situ reflection high-energy electron diffraction (RHEED), ex-situ X-ray diffraction, Raman, and X-ray photoelectron spectra (XPS). At a lower substrate temperature (730 K), the epitaxial film tends to form mixed phases with a coexistence of Mn3O4 and Mn5O8 in order to relieve the mismatch-strain. However, at a higher substrate temperature (750 K), all of the films crystallize into Mn3O4; the critical thickness of the film grown under a lower growth rate (7 Å/min) is much larger than that under a high growth rate (10 Å/min). When the film reaches a certain critical thickness, the surface will become fairly rough, and another oriented phase Mn3O4 would crystallize on such a surface.

  20. Adhesion strength of Ni film on Ti substrate characterized by three-point bend test, peel test and theoretic calculation

    International Nuclear Information System (INIS)

    Ren, F.Z.; Liu, P.; Jia, S.G.; Tian, B.H.; Su, J.H.

    2006-01-01

    Electroplating was employed to fabricate the Ni film on the Ti substrate. Adhesion strength of Ni film on Ti substrate was determined using the three-point bend technique that was proposed in standard mechanics test. The experimental results demonstrate that the interface fracture energies obviously increase with the roughness of Ti substrates, and are independence with the thickness of Ni films. Moreover, the adhesion strength of Ni film on Ti substrate was also measured by peel test, and was evaluated by Miedema model of experiential electron theory. The intrinsic interface fracture energy measured by three-point bend test is reasonable agreement with that obtained by theoretical calculation of Miedema model, and is roughly comparable to that by peel test

  1. Photoconductive ZnO Films Printed on Flexible Substrates by Inkjet and Aerosol Jet Techniques

    Science.gov (United States)

    Winarski, D. J.; Kreit, E.; Heckman, E. M.; Flesburg, E.; Haseman, M.; Aga, R. S.; Selim, F. A.

    2018-02-01

    Zinc oxide (ZnO) thin films have remarkable versatility in sensor applications. Here, we report simple ink synthesis and printing methods to deposit ZnO photodetectors on a variety of flexible and transparent substrates, including polyimide (Kapton), polyethylene terephthalate, cyclic olefin copolymer (TOPAS), and quartz. X-ray diffraction analysis revealed the dependence of the film orientation on the substrate type and sintering method, and ultraviolet-visible (UV-Vis) absorption measurements revealed a band edge near 380 nm. van der Pauw technique was used to measure the resistivity of undoped ZnO and indium/gallium-codoped ZnO (IGZO) films. IGZO films showed lower resistivity and larger average grain size compared with undoped ZnO films due to addition of In3+ and Ga3+, which act as donors. A 365-nm light-emitting diode was used to photoirradiate the films to study their photoconductive response as a function of light intensity at 300 K. The results revealed that ZnO films printed by aerosol jet and inkjet techniques exhibited five orders of magnitude photoconductivity, indicating that such films are viable options for use in flexible photodetectors.

  2. Effect of substrate temperatures on the optical properties of evaporated Sc2O3 thin films

    International Nuclear Information System (INIS)

    Liu Guanghui; Jin Yunxia; He Hongbo; Fan Zhengxiu

    2010-01-01

    Scandium oxide (Sc 2 O 3 ) films were deposited by electron beam evaporation with substrate temperatures varying from 50 to 350 o C. X-ray diffraction, scanning electron microscopy, spectrometer, and optical profilograph were employed to investigate the structural and optical properties of the films. The refractive index and extinction coefficient were calculated from the transmittance and reflectance spectra, and then the energy band gaps were deduced and discussed. Laser induced damage threshold of the films were also characterized. Optical and structural properties of Sc 2 O 3 films were found to be sensitive to substrate temperature.

  3. Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

    International Nuclear Information System (INIS)

    Ying Minju; Du Xiaolong; Mei Zengxia; Zeng Zhaoquan; Zheng Hao; Wang Yong; Jia Jinfeng; Zhang Ze; Xue Qikun

    2004-01-01

    The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

  4. Transparent conducting properties of anatase Ti0.94Nb0.06O2 polycrystalline films on glass substrate

    International Nuclear Information System (INIS)

    Hitosugi, T.; Ueda, A.; Nakao, S.; Yamada, N.; Furubayashi, Y.; Hirose, Y.; Konuma, S.; Shimada, T.; Hasegawa, T.

    2008-01-01

    We report on transparent conducting properties of anatase Ti 0.94 Nb 0.06 O 2 (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 deg. C, with subsequent H 2 -annealing at 500 deg. C. Polycrystalline TNO films showed resistivity of 4.5 x 10 -4 Ω cm and 1.5 x 10 -3 Ω cm for films prepared at substrate temperature of room temperature and 250 deg. C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films

  5. Properties of TiO{sub 2} thin films deposited by rf reactive magnetron sputtering on biased substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nezar, Sawsen, E-mail: snezar@cdta.dz [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Saoula, Nadia [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Sali, Samira [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE Algiers) (Algeria); Faiz, Mohammed; Mekki, Mogtaba [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Laoufi, Nadia Aïcha [Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Tabet, Nouar [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Doha (Qatar)

    2017-02-15

    Highlights: • TiO{sub 2} thin films were deposited on negatively biased substrates by rf magnetron sputtering technique. • The bias favors the formation of TiO{sub 2} crystalline phase. • The roughness of the films increases and the grain size decreases as the bias voltage is varied between (0 and −100 V). • XPS reveals the presence of adsorbed humidity of the surface and Ti{sup 4+} oxidation state in the as prepared samples. - Abstract: TiO{sub 2} thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO{sub 2} crystalline phase, we show in this study that it is possible to deposit crystalline TiO{sub 2} thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R{sub rms}), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO{sub 2} crystallized thin films of engineered properties at room temperature.

  6. Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

    Science.gov (United States)

    He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

    2010-09-01

    We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

  7. Significant effect of substrate temperature on the phase structure, optical and electrical properties of RF sputtered CIGS films

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhou; Yan Yong; Li Shasha; Zhang Yanxia; Yan Chuanpeng; Liu Lian; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Superconductivity and New energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Secondary phase exist in the RF sputtered CIGS films as it deposited at 150 Degree-Sign C and 500 Degree-Sign C. Black-Right-Pointing-Pointer CIGS films deposited beyond 350 Degree-Sign C show (1 1 2) prefer orientation. Black-Right-Pointing-Pointer E{sub g} of the CIGS films increased with the increase of substrate temperature. Black-Right-Pointing-Pointer Conductivity of the films is affected by 'variable range hopping' mechanism. - Abstract: This work studied the effect of substrate temperature on the phase structure, optical and electrical properties of the one-step radio frequency sputtered Cu(In,Ga)Se{sub 2} (CIGS) thin films. X-ray diffraction (XRD) analysis revealed that all the deposited CIGS films are chalcopyrite phase with polycrystalline structure. The films deposited beyond the substrate temperature of 350 Degree-Sign C show (1 1 2) prefer orientation. Raman spectra reveal that the 150 Degree-Sign C deposited CIGS film coexists with Cu{sub 2-x}Se phase and the 500 Degree-Sign C deposited film contains ordered defect compound (ODC) phase. With the increase of substrate temperature, energy band gap of the CIGS film increase from 0.99 to 1.27 eV. Films deposited at higher temperature exhibit larger electrical conductivity. Conductivity of the CIGS films is dominated by 'variable range hopping' mechanism. The disorder in our CIGS the films is associated with the formation of intrinsic defects such as V{sub Se} and In{sub Cu} for their low formation energy.

  8. Effect of Ag film thickness on the optical and the electrical properties in CuAlO2/Ag/CuAlO2 multilayer films grown on glass substrates

    International Nuclear Information System (INIS)

    Oh, Dohyun; No, Young Soo; Kim, Su Youn; Cho, Woon Jo; Kwack, Kae Dal; Kim, Tae Whan

    2011-01-01

    Research highlights: The CuAlO 2 /Ag/CuAlO 2 multilayer films were grown on glass substrates using radio-frequency magnetron sputtering at room temperature. Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. The morphology Ag films with a thickness of 8 nm was uniform. The morphology of the Ag films inserted in the CuAlO 2 films significantly affected the optical transmittance and the resistivity of the CuAlO 2 films deposited on glass substrates. The maximum transmittance of the CuAlO 2 /Ag/CuAlO 2 multilayer films with a thickness of 8 nm was 89.16%. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films with an Ag film thickness of 18 nm was as small as about 2.8 x 10 -5 Ω cm. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films was decreased as a result of the thermal annealing treatment. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as TCO films in solar cells. - Abstract: Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. The resistivity of the 40 nm-CuAlO 2 /18 nm-Ag/40 nm-CuAlO 2 multilayer films was 2.8 x 10 -5 Ω cm, and the transmittance of the multilayer films with an Ag film thickness of 8 nm was approximately 89.16%. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as

  9. Optimum angle of incidence for monochromatic interference in transparent films on absorbing substrates

    International Nuclear Information System (INIS)

    Muller, R.H.; Sand, M.L.

    1980-01-01

    Angles of incidence for s- and p-polarized light have been computed and confirmed experimentally for which monochromatic interference in transparent thin films on absorbing substrates results in optimum interference fringe contrast (visibility=1). Under these angles of incidence and with polarized light, film thickness determinations which are not possible at normal incidence or with unpolarized light can be carried out by use of thin-film interference

  10. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuezhang [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Wei Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yu Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yang Taiming; Zhai Hao [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. Black-Right-Pointing-Pointer The nucleation density was increased to 10{sup 11} cm{sup -2}. Black-Right-Pointing-Pointer Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. Black-Right-Pointing-Pointer Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp{sup 3}-bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10{sup 11} cm{sup -2}, and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  11. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    International Nuclear Information System (INIS)

    Liu Xuezhang; Wei Qiuping; Yu Zhiming; Yang Taiming; Zhai Hao

    2013-01-01

    Highlights: ► Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. ► The nucleation density was increased to 10 11 cm −2 . ► Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. ► Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp 3 -bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10 11 cm −2 , and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  12. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Mohammed, D.W., E-mail: DWM172@bham.ac.uk [University of Birmingham, School of Metallurgy and Materials, Edgbaston, Birmingham, B15 2TT (United Kingdom); Waddingham, R.; Flewitt, A.J. [University of Cambridge, Electrical Engineering Division, Department of Engineering, J J Thomson Avenue, Cambridge CB3 0FA,United Kingdom (United Kingdom); Sierros, K.A. [West Virginia University, Mechanical & Aerospace Engineering, Morgantown, WV 26506 (United States); Bowen, J. [Open University, Department of Engineering and Innovation, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Kukureka, S.N. [University of Birmingham, School of Metallurgy and Materials, Edgbaston, Birmingham, B15 2TT (United Kingdom)

    2015-11-02

    Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with in situ optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PEN was ~ 2.9%, which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~ 1.2%, of the IGZO/polymer samples flexed in compression to ~ 5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics. - Highlights: • Mechanical flexibility of IGZO thin films investigated by uniaxial tensile and buckling tests • Uniaxial fragmentation gives crack onset strain for IGZO/PEN of 2.9% (higher than for IGZO/PET.) • Saturated crack spacing strongly dependent on mechanical properties of polymer substrate • Crack onset strain in concave bending higher than in convex bending for both substrates.

  14. Mechanical properties of amorphous indium–gallium–zinc oxide thin films on compliant substrates for flexible optoelectronic devices

    International Nuclear Information System (INIS)

    Mohammed, D.W.; Waddingham, R.; Flewitt, A.J.; Sierros, K.A.; Bowen, J.; Kukureka, S.N.

    2015-01-01

    Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with in situ optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PEN was ~ 2.9%, which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~ 1.2%, of the IGZO/polymer samples flexed in compression to ~ 5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics. - Highlights: • Mechanical flexibility of IGZO thin films investigated by uniaxial tensile and buckling tests • Uniaxial fragmentation gives crack onset strain for IGZO/PEN of 2.9% (higher than for IGZO/PET.) • Saturated crack spacing strongly dependent on mechanical properties of polymer substrate • Crack onset strain in concave bending higher than in convex bending for both substrates

  15. Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

    Science.gov (United States)

    Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

    2018-02-02

    Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

  16. YBCO/manganite layered structures on NdGaO{sub 3} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nurgaliev, T [Institute of Electronics BAS, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria); Blagoev, B [Institute of Electronics BAS, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria); Donchev, T [Institute of Electronics BAS, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria); Miteva, S [Institute of Electronics BAS, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria); Mozhaev, P B [Institute of Physics and Technology RAS, Nakhimovsky ave. 36, 117218 Moscow (Russian Federation); Mozhaeva, J E [Institute of Physics and Technology RAS, Nakhimovsky ave. 36, 117218 Moscow (Russian Federation); Ovsyannikov, G A [Institute of Radio Engineering and Electronics RAS, Mokhovaya st.11, 103907 Moscow (Russian Federation); Kotelyanskii, I M [Institute of Radio Engineering and Electronics RAS, Mokhovaya st.11, 103907 Moscow (Russian Federation); Jacobsen, C [Technical University of Denmark, Building 307-309, DK-2800, Kgs.Lyngby, Denmark (Denmark)

    2006-06-01

    Results of deposition of YBa{sub 2}Cu{sub 3}O{sub 7-x}/CeO{sub 2}/(La{sub 0.7}Ca{sub 0.3}MnO{sub 3} or La{sub 0.7}Sr{sub 0.3}MnO{sub 3}) structures on the standard oriented and tilted ( 8{sup 0}) NdGaO{sub 3} substrates and results of investigation of electrical parameters of YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films in such structures are presented. The YBCO component of the structure exhibits lower value of the critical parameters in comparison with those of single YBCO films. The contribution of the magnetic layer to the microwave losses of the YBCO film in the layered structure is evaluated.

  17. A direct method to measure the fracture toughness of indium tin oxide thin films on flexible polymer substrates

    International Nuclear Information System (INIS)

    Chang, Rwei-Ching; Tsai, Fa-Ta; Tu, Chin-Hsiang

    2013-01-01

    This work presents a straightforward method to measure the fracture toughness of thin films deposited on flexible substrates. A 200 nm thick indium tin oxide (ITO) thin film is deposited on a 188 μm thick terephthalate (PET) substrate by a radio frequency magnetron sputtering machine. Using nanoindentation to induce brittle fracture on the ITO thin films, the energy release is calculated from integrating the resulting load–depth curve. An approach that directly measures the fracture toughness of thin films deposited on flexible substrates is proposed. A comparison shows that the results of the proposed method agree well with those of other reports. Furthermore, in order to improve the toughness of the ITO thin films, a copper interlayer is added between the ITO thin film and PET substrate. It shows that the fracture toughness of the ITO thin film deposited on the copper interlayer is higher than that of the one without the interlayer, which agrees well with the critical load tested by micro scratch. Further observations on optical and electric performances are also discussed in this work. - Highlights: • A straightforward method to measure the film's toughness • Directly using the load-depth curve of nanoindentation • The toughness is consistent with the critical load tested by micro scratch. • Interlayers can improve the film's toughness. • Optical and electric performances are also discussed

  18. Influence of substrate on structural, morphological and optical properties of TiO2 thin films deposited by reaction magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Xinghua Zhu

    2017-12-01

    Full Text Available Titanium dioxide (TiO2 films have been prepared by DC reaction magnetron sputtering technique on different substrates (glass, SiO2, platinum electrode-Pt, Silicon-Si. X-ray diffraction (XRD patterns showed that all TiO2 films were grown along the preferred orientation of (110 plane. Samples on Si and Pt substrates are almost monophasic rutile, however, samples on glass and SiO2 substrates accompanied by a weak anatase structure. Atomic force microscopy (AFM images revealed uniform grain distribution except for films on Pt substrates. Photoluminescence (PL spectra showed obvious intrinsic emission band, but films on glass was accompanied by a distinct defect luminescence region. Raman spectroscopy suggested that all samples moved to high wavenumbers and films on glass moved obviously.

  19. Effect of substrate temperature on the structure, electrical and optical properties of Mo doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Guifeng; Zhao, Xiaoli; Zhang, Hui; Wang, He; Liu, Feifei; Zhang, Xiaoqiang [Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China); Gao, Jianbo [China Institute of Atomic Energy, Beijing 102413 (China); Zhao, Yanmin; Zhang, Chao [No. 18TH Research Institute, China Electronics Technology Group Corporation, Tianjin 300384 (China); Tao, Junguang, E-mail: taojunguang@163.com [Key Lab. for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 (China)

    2016-09-15

    Highlights: • MZO thin films were prepared by RF magnetron sputtering from ZnO target and DC magnetron sputtering from Mo target. • All films are polycrystalline with preferential c-axis growth. • The various properties of films fabricated at varied substrate temperature have been studied. • The valence of the Mo ions in the ZnO matrix is mixture of +5 and +6. - Abstract: Mo-doped ZnO (MZO) transparent conductive thin films were prepared on glass substrate under various substrate temperature from 50 °C to 200 °C. The microstructural, electrical and optical properties of the MZO films were investigated by X-ray diffraction (XRD), Hall effect and UV–vis spectrophotometer. Based on XRD measurements, all films are polycrystalline with preferential c-axis growth. The lowest resistivity was obtained to be 2.8 × 10{sup −3} Ω·cm. According to X-ray photoelectron spectroscopy (XPS) measurement, the valence of the Mo ions in the ZnO matrix is a mixture of +5 and +6. In addition, the transmittance of the film is ∼80% throughout the visible light region. Our results indicate that the MZO films are suitable for potential transparent optoelectronic applications.

  20. Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Sato, Yoichi; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    Co x Ni 100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co x Ni 100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co x Ni 100-x films are in agreement within ±0.5% with the values of the respective bulk Co x Ni 100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110) fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  1. Transport measurements on superconducting YBa2Cu3O7-δ thin film lines

    International Nuclear Information System (INIS)

    Moeckly, B.H.; Lathrop, D.K.; Redinbo, G.F.; Russek, S.E.; Buhrman, R.A.

    1990-01-01

    Critical current densities, magnetic field response, and microwave response have been measured for laser ablated YBa 2 Cu 3 O 7-δ thin film lines on MgO and SrTiO 3 substrates. Films on SrTiO 3 have critical current densities > 1 x 10 6 A/cm 2 at 77 K and show uniform transport properties in lines of all sizes. Films on MgO have critical current densities which range between 10 2 and 10 6 A/cm 2 at 77 K and show considerable variation from device to device on the same chip. Narrow lines on MgO with low critical current densities show Josephson weak link structure which includes RSJ-like IV curves, microwave induced constant voltage steps, and a high sensitivity to magnetic field. The presence of the Josephson weak links if correlated with small amounts of misaligned grains in film on MgO

  2. Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

    Science.gov (United States)

    Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

    2018-02-01

    (11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

  3. Preparation of Superhydrophobic Film on Ti Substrate and Its Anticorrosion Property.

    Science.gov (United States)

    Zhu, Min; Tang, Wenchuan; Huang, Luyao; Zhang, Dawei; Du, Cuiwei; Yu, Gaohong; Chen, Ming; Chowwanonthapunya, Thee

    2017-06-08

    Superhydrophobic films were fabricated on a titanium substrate with or without anodizing by using a self-assembling method. Firstly, the pretreatments of mechanical polishing/anodizing or mechanical polishing only were conducted, respectively. Subsequently, the preparation of polydopamine film layer, deposition of nano-silver particles, and post modification of 1H,1H,2H,2H-perfluorodecanethiol were performed on the surface of the pretreated substrate. The surface morphologies, compositions, wettability, and corrosion resistance of the films were investigated with scanning electron microscopy (SEM), energy-dispersive spectrometry (EDS), water contact angle measurements, and electrochemical tests, respectively. Meanwhile, the effect of the deposition time in the silver nitrate solution on the hydrophobicity of the specimen surface was investigated. The result showed that with the increase of deposition time, the hydrophobic property enhanced gradually. The surface deposited for 7 h exhibited an optimum hydrophobic effect, which was characterized with a large water contact angle (WCA) of 154°, and the surface was rather rough and covered by a relatively uniform layer of micro-nano silver particles. The excellent hydrophobicity was attributed to a rough stratified microstructure along with the low surface energy. The electrochemical measurements showed that the existence of the superhydrophobic film can effectively enhance the corrosion resistance of Ti samples.

  4. Preparation of Superhydrophobic Film on Ti Substrate and Its Anticorrosion Property

    Directory of Open Access Journals (Sweden)

    Min Zhu

    2017-06-01

    Full Text Available Superhydrophobic films were fabricated on a titanium substrate with or without anodizing by using a self-assembling method. Firstly, the pretreatments of mechanical polishing/anodizing or mechanical polishing only were conducted, respectively. Subsequently, the preparation of polydopamine film layer, deposition of nano-silver particles, and post modification of 1H,1H,2H,2H-perfluorodecanethiol were performed on the surface of the pretreated substrate. The surface morphologies, compositions, wettability, and corrosion resistance of the films were investigated with scanning electron microscopy (SEM, energy-dispersive spectrometry (EDS, water contact angle measurements, and electrochemical tests, respectively. Meanwhile, the effect of the deposition time in the silver nitrate solution on the hydrophobicity of the specimen surface was investigated. The result showed that with the increase of deposition time, the hydrophobic property enhanced gradually. The surface deposited for 7 h exhibited an optimum hydrophobic effect, which was characterized with a large water contact angle (WCA of 154°, and the surface was rather rough and covered by a relatively uniform layer of micro-nano silver particles. The excellent hydrophobicity was attributed to a rough stratified microstructure along with the low surface energy. The electrochemical measurements showed that the existence of the superhydrophobic film can effectively enhance the corrosion resistance of Ti samples.

  5. Preparation of Superhydrophobic Film on Ti Substrate and Its Anticorrosion Property

    Science.gov (United States)

    Zhu, Min; Tang, Wenchuan; Huang, Luyao; Zhang, Dawei; Du, Cuiwei; Yu, Gaohong; Chen, Ming; Chowwanonthapunya, Thee

    2017-01-01

    Superhydrophobic films were fabricated on a titanium substrate with or without anodizing by using a self-assembling method. Firstly, the pretreatments of mechanical polishing/anodizing or mechanical polishing only were conducted, respectively. Subsequently, the preparation of polydopamine film layer, deposition of nano-silver particles, and post modification of 1H,1H,2H,2H-perfluorodecanethiol were performed on the surface of the pretreated substrate. The surface morphologies, compositions, wettability, and corrosion resistance of the films were investigated with scanning electron microscopy (SEM), energy-dispersive spectrometry (EDS), water contact angle measurements, and electrochemical tests, respectively. Meanwhile, the effect of the deposition time in the silver nitrate solution on the hydrophobicity of the specimen surface was investigated. The result showed that with the increase of deposition time, the hydrophobic property enhanced gradually. The surface deposited for 7 h exhibited an optimum hydrophobic effect, which was characterized with a large water contact angle (WCA) of 154°, and the surface was rather rough and covered by a relatively uniform layer of micro-nano silver particles. The excellent hydrophobicity was attributed to a rough stratified microstructure along with the low surface energy. The electrochemical measurements showed that the existence of the superhydrophobic film can effectively enhance the corrosion resistance of Ti samples. PMID:28772987

  6. CVD of alternated microcrystalline (MCD) and nanocrystalline (NCD) diamond films on WC-TIC-CO substrates

    International Nuclear Information System (INIS)

    Campos, Raonei Alves; Contin, Andre; Trava-Airoldi, Vladimir J.; Corat, Evaldo Jose; Barquete, Danilo Maciel

    2010-01-01

    CVD Diamond coating of WC-TiC-Co cutting tools has been an alternative to increase tool lifetime. Experiments have shown that residual stresses produced during films growth on WC-TiC-Co substrates significantly increases with increasing film thickness up to 20 μm and usually leads to film delamination. In this work alternated micro- and nanocrystalline CVD diamond films have been used to relax interface stresses and to increase diamond coatings performance. WC-TiC-Co substrates have been submitted to a boronizing thermal diffusion treatment prior to CVD diamond films growth. After reactive heat treatment samples were submitted to chemical etching in acid and alkaline solution. The diamond films deposition was performed using HFCVD reactor with different gas concentrations for microcrystalline (MCD) and nano-crystalline (NCD) films growth. As a result, we present the improvement of diamond films adherence on WC-TiC-Co, evaluated by indentation and machining tests. Samples were characterized by Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray (EDX) for qualitative analysis of diamond films. X-ray Diffraction (XRD) was used for phases identification after boronizing process. Diamond film compressive residual stresses were analyzed by Raman Scattering Spectroscopy (RSS). (author)

  7. Ultrathin film, high specific power InP solar cells on flexible plastic substrates

    International Nuclear Information System (INIS)

    Shiu, K.-T.; Zimmerman, Jeramy; Wang Hongyu; Forrest, Stephen R.

    2009-01-01

    We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 μm thick Kapton sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2±1.0%, and its specific power is 2.0±0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a <1 cm radius without damage.

  8. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

    2013-10-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

  9. Role of the substrate on the magnetic anisotropy of magnetite thin films grown by ion-assisted deposition

    International Nuclear Information System (INIS)

    Prieto, Pilar; Prieto, José Emilio; Gargallo-Caballero, Raquel; Marco, José Francisco; Figuera, Juan de la

    2015-01-01

    Graphical abstract: - Highlights: • The magnetic anisotropy of magnetite thin films is controlled by the substrate induced microstructure. • Single-crystal oxide substrates induce fourfold in-plane magnetic anisotropy • MgO and SrTiO_3 substrates show the same magnetic behavior despite its different mismatch with Fe_3O_4 films. • Silicon and glass substrates induce in-plane magnetic isotropy and uniaxial anisotropy, respectively. - Abstract: Magnetite (Fe_3O_4) thin films were deposited on MgO (0 0 1), SrTiO_3 (0 0 1), LaAlO_3 (0 0 1) single crystal substrates as well on as silicon and amorphous glass in order to study the effect of the substrate on their magnetic properties, mainly the magnetic anisotropy. We have performed a structural, morphological and compositional characterization by X-ray diffraction, atomic force microscopy and Rutherford backscattering ion channeling in oxygen resonance mode. The magnetic anisotropy has been investigated by vectorial magneto-optical Kerr effect. The results indicate that the magnetic anisotropy is especially influenced by the substrate-induced microstructure. In-plane isotropy and uniaxial anisotropy behavior have been observed on silicon and glass substrates, respectively. The transition between both behaviors depends on grain size. For LaAlO_3 substrates, in which the lattice mismatch between the Fe_3O_4 films and the substrate is significant, a weak in-plane fourfold magnetic anisotropy is induced. However when magnetite is deposited on MgO (0 0 1) and SrTiO_3 (0 0 1) substrates, a well-defined fourfold in-plane magnetic anisotropy is observed with easy axes along [1 0 0] and [0 1 0] directions. The magnetic properties on these two latter substrates are similar in terms of magnetic anisotropy and coercive fields.

  10. Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

    Science.gov (United States)

    Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

    2018-01-01

    The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

  11. Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

    Science.gov (United States)

    Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

    2007-11-01

    A mathematical model is developed to analyze the growth/decay rate of surface perturbations of an ultrathin metal film on an amorphous substrate (SiO2). The formulation combines the approach of Mullins [W. W. Mullins, J. Appl. Phys. 30, 77 (1959)] for bulk surfaces, in which curvature-driven mass transport and surface deformation can occur by surface/volume diffusion and evaporation-condensation processes, with that of Spencer etal . [B. J. Spencer, P. W. Voorhees, and S. H. Davis, Phys. Rev. Lett. 67, 26 (1991)] to describe solid-state transport in thin films under epitaxial strain. Modifications of the Mullins model to account for thin-film boundary conditions result in qualitatively different dispersion relationships especially in the limit as kho≪1, where k is the wavenumber of the perturbation and ho is the unperturbed film height. The model is applied to study the relative rate of solid-state mass transport as compared to that of liquid phase dewetting in a thin film subjected to a fast thermal pulse. Specifically, we have recently shown that multiple cycles of nanosecond (ns) pulsed laser melting and resolidification of ultrathin metal films on amorphous substrates can lead to the formation of various types of spatially ordered nanostructures [J. Trice, D. Thomas, C. Favazza, R. Sureshkumar, and R. Kalyanaraman, Phys. Rev. B 75, 235439 (2007)]. The pattern formation has been attributed to the dewetting of the thin film by a hydrodynamic instability. In such experiments the film is in the solid state during a substantial fraction of each thermal cycle. However, results of a linear stability analysis based on the aforementioned model suggest that solid-state mass transport has a negligible effect on morphological changes of the surface. Further, a qualitative analysis of the effect of thermoelastic stress, induced by the rapid temperature changes in the film-substrate bilayer, suggests that stress relaxation does not appreciably contribute to surface

  12. Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

    International Nuclear Information System (INIS)

    Sim, Gi-Dong; Won, Sejeong; Lee, Soon-Bok

    2012-01-01

    Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.

  13. Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

    Science.gov (United States)

    Sim, Gi-Dong; Won, Sejeong; Lee, Soon-Bok

    2012-11-01

    Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.

  14. Monopole antenna in quantitative near-field microwave microscopy of planar structures

    International Nuclear Information System (INIS)

    Reznik, Alexander N.; Korolyov, Sergey A.

    2016-01-01

    We have developed an analytical model of a near-field microwave microscope based on a coaxial resonator with a sharpened tip probe. The probe interacts with a layered sample that features an arbitrary depth distribution of permittivity. The microscopic tip end with the accumulated charge is regarded as a monopole antenna radiating an electric field in near zone. The impedance of such an antenna is determined within a quasi-static approximation. The proposed model is used for calculating the sample-sensitive parameters of the microscope, specifically, resonance frequency f_0 and quality factor Q_0, as a function of probe-sample distance h. The theory has been verified experimentally in studies of semiconductor structures, both bulk and thin films. For measurements, we built a ∼2.1 GHz microscope with an effective tip radius of about 100 μm. The theoretical and experimental dependences f_0(h) and Q_0(h) were found to be in a good agreement. The developed theory underlies the method for determining sheet resistance R_s_h of a semiconductor film on a dielectric substrate proposed in this article. Studies were performed on doped n-GaN films on an Al_2O_3 substrate. The effective radius and height of the probe determined from calibration measurements of etalon samples were used as the model fitting parameters. For etalon samples, we employed homogeneous sapphire and doped silicon plates. We also performed four-probe dc measurements of R_s_h. The corresponding values for samples with R_s_h > 1 kΩ were found to be 50% to 100% higher than the microwave results, which are attributed to the presence of microdefects in semiconductor films.

  15. Channelling study of La{sub 1−x}Sr{sub x}CoO{sub 3} films on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Szilágyi, E., E-mail: szilagyi.edit@wigner.mta.hu [Institute for Particle and Nuclear Physics, Wigner Research Centre for Physics, P.O.Box 49, H-1525 Budapest (Hungary); Kótai, E. [Institute for Particle and Nuclear Physics, Wigner Research Centre for Physics, P.O.Box 49, H-1525 Budapest (Hungary); Rata, D. [Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, D-01187 Dresden (Germany); Németh, Z.; Vankó, G. [Institute for Particle and Nuclear Physics, Wigner Research Centre for Physics, P.O.Box 49, H-1525 Budapest (Hungary)

    2014-08-01

    The cobalt oxide system LaCoO{sub 3} and its Sr-doped child compounds have been intensively studied for decades due to their intriguing magnetic and electronic properties. Preparing thin La{sub 1−x}Sr{sub x}CoO{sub 3} (LSCO) films on different substrates allows for studies with a new type of perturbation, as the films are subject to substrate-dependent epitaxial strain. By choosing a proper substrate for a thin film grow, not only compressing but also tensile strain can be applied. The consequences for the fundamental physical properties are dramatic: while compressed films are metallic, as the bulk material, films under tensile strain become insulating. The goal of this work is to determine the strain tensor in LSCO films prepared on LaAlO{sub 3} and SrTiO{sub 3} substrates by pulsed laser deposition using RBS/channelling methods. Apart from the composition and defect structure of the samples, the depth dependence of the strain tensor, the cell parameters, and the volume of the unit cell are also determined. Asymmetric behaviour of the strained cell parameters is found on both substrates. This asymmetry is rather weak in the case of LSCO film grown on LaAlO{sub 3}, while stronger on SrTiO{sub 3} substrate. The strain is more effective at the interface, some relaxation can be observed near to the surface.

  16. Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

    International Nuclear Information System (INIS)

    Liu Aiping; Zhu Jiaqi; Han Jiecai; Wu Huaping; Jia Zechun

    2007-01-01

    We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH 3 as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about -80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH 3 is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp 2 sites dispersed in sp 3 skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films

  17. Preparation of SrCoOx thin films on LaAlO3 substrate and their reversible redox process at moderate temperatures

    Science.gov (United States)

    Hao, L.; Zhang, Z. F.; Xie, X. N.; Wang, H. R.; Yu, Q. X.; Zhu, H.

    2015-10-01

    Using magnetron sputtering and annealing techniques, we have prepared SrCoOx films on LaAlO3 and SrTiO3 substrates. Distinctly different structures of the films have been found on the two substrates. It is suggested that positive lattice mismatch between film and substrate promotes SrCoO2.5 films with an orthorhombic structure grown on SrTiO3 substrate, whereas negative lattice mismatch from LaAlO3 substrate is in favor of increasing the valence state of Co and thus the growth of oxygen-rich SrCoOx with a tetragonal structure. In addition to the structural characterization, magnetic and electrical measurements confirm that the oxygen content x is between 2.75 and 2.88 for the latter. Reversibility of the topotactic phase transformation between SrCoO2.5 and the oxygen-rich SrCoOx films has also been studied by changing the oxygen pressure during annealing process. Even in the presence of a negative lattice mismatch, the results reveal that the tetragonal SrCoOx films on LaAlO3 substrate retain high oxygen mobility identified before in cubic SrCoOx films.

  18. Improvement of the characteristics of chemical bath deposition-cadmium sulfide films deposited on an O{sub 2} plasma-treated polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Donggun [Department of Electronic Engineering, Korea National University of Transportation, Chungju-si, Chungcheongbuk-do 380-702 (Korea, Republic of); Lee, Jaehyeong [School of Electronic and Electrical Engineering, Sungkyunkwan University 300, Cheoncheon-dong, Jangan-gu, Sunwon, Kyeonggi-do, 440-746 (Korea, Republic of); Song, Woochang, E-mail: wcsong@kangwon.ac.kr [Department of Electrical Engineering, Kangwon National University, Samcheok-si, Gangwon-do 245-711 (Korea, Republic of)

    2013-11-01

    We prepared cadmium sulfide (CdS) films on a polyethylene terephthalate (PET) substrate by a chemical bath deposition (CBD) technique. To improve the adhesion between the CdS film and the PET substrate, the substrate was pre-treated with an O{sub 2} plasma by an inductively coupled plasma. The surface characterizations of the pre-treated PET substrate were analyzed by a contact angle measurement and atomic force microscopy. The results showed that that O{sub 2} plasma-treated PET films had more hydrophilic surface. The hydrophilic property of the substrate is one of the important factors when a film is prepared by CBD. The structural and the optical properties of the CdS films, deposited on PET substrates, were analyzed by using a scanning electron microscope, X-ray diffraction and a UV–visible spectrophotometer. The CdS films were formed on a compact and granular structure. The optical transmittance was also improved. Therefore, the O{sub 2} plasma treatment of a PET surface is an effective method of preparing CdS films deposited on substrates by CBD. - Highlights: • Chemical bath deposition of CdS film for flexible solar cells • O{sub 2} plasma treatment improved adhesion between the CdS and polymer substrate • Identification of best fabrication condition of CdS window layers for flexible solar cells.

  19. Structural features of anodic oxide films formed on aluminum substrate coated with self-assembled microspheres

    International Nuclear Information System (INIS)

    Asoh, Hidetaka; Uchibori, Kota; Ono, Sachiko

    2009-01-01

    The structural features of anodic oxide films formed on an aluminum substrate coated with self-assembled microspheres were investigated by scanning electron microscopy and atomic force microscopy. In the first anodization in neutral solution, the growth of a barrier-type film was partially suppressed in the contact area between the spheres and the underlying aluminum substrate, resulting in the formation of ordered dimple arrays in an anodic oxide film. After the subsequent second anodization in acid solution at a voltage lower than that of the first anodization, nanopores were generated only within each dimple. The nanoporous region could be removed selectively by post-chemical etching using the difference in structural dimensions between the porous region and the surrounding barrier region. The mechanism of anodic oxide growth on the aluminum substrate coated with microspheres through multistep anodization is discussed.

  20. Structural features of anodic oxide films formed on aluminum substrate coated with self-assembled microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Asoh, Hidetaka [Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)], E-mail: asoh@cc.kogakuin.ac.jp; Uchibori, Kota; Ono, Sachiko [Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)

    2009-07-15

    The structural features of anodic oxide films formed on an aluminum substrate coated with self-assembled microspheres were investigated by scanning electron microscopy and atomic force microscopy. In the first anodization in neutral solution, the growth of a barrier-type film was partially suppressed in the contact area between the spheres and the underlying aluminum substrate, resulting in the formation of ordered dimple arrays in an anodic oxide film. After the subsequent second anodization in acid solution at a voltage lower than that of the first anodization, nanopores were generated only within each dimple. The nanoporous region could be removed selectively by post-chemical etching using the difference in structural dimensions between the porous region and the surrounding barrier region. The mechanism of anodic oxide growth on the aluminum substrate coated with microspheres through multistep anodization is discussed.

  1. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  2. Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Sanchez, G.; Wu, A.; Tristant, P.; Tixier, C.; Soulestin, B.; Desmaison, J.; Bologna Alles, A.

    2008-01-01

    AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO 2 /Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., or . The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions

  3. Effect of substrate temperature on corrosion performance of nitrogen doped amorphous carbon thin films in NaCl solution

    Energy Technology Data Exchange (ETDEWEB)

    Khun, N.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, E., E-mail: MEJLiu@ntu.edu.s [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2009-07-01

    Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 {sup o}C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp{sup 3}-bonded cross-link structure that was significantly affected by the substrate temperature.

  4. Effect of substrate temperature on corrosion performance of nitrogen doped amorphous carbon thin films in NaCl solution

    International Nuclear Information System (INIS)

    Khun, N.W.; Liu, E.

    2009-01-01

    Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 o C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp 3 -bonded cross-link structure that was significantly affected by the substrate temperature.

  5. Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011){sub B3} single-crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohtake, Mitsuru, E-mail: ohtake@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Higuchi, Jumpei; Yabuhara, Osamu [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2011-09-30

    Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011){sub B3} single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar]{sub bcc} || GaAs(011)[011-bar]{sub B3}. The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{l_brace}011{r_brace} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011){sub B3} substrates.

  6. Fabrication of Si3N4 thin films on phynox alloy substrates for electronic applications

    Science.gov (United States)

    Shankernath, V.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Padmanabhan, K. A.

    2018-04-01

    Thin films of Si3N4 are deposited on Phynox alloy substrates using radio frequency magnetron sputtering. The thickness of the films was varied between 80-150 nm by increasing the duration of deposition from 1 to 3 h at a fixed power density and working pressure. X-ray diffraction patterns reveal that the Si3N4 films had crystallized inspite of the substrates not being heated during deposition. This was confirmed using selected area electron diffraction and high resolution transmission electron microscopy also. It is postulated that a low lattice misfit between Si3N4 and Phynox provides energetically favourable conditions for ambient temperature crystallization. The hardness of the films is of the order of 6 to 9 GPa.

  7. Granularity effect on microwave surface resistance in high-Tc YBa2Cu3O7-x bulk and thin film superconductor

    International Nuclear Information System (INIS)

    Swarup, Ram; Gupta, A.K.

    2001-01-01

    We report the effect of variation of Josephson coupling strength in YBa 2 Cu 3 O 7-x (YBCO) superconductor due to grain enlargement, grain orientation and magnetic field on microwave surface resistance (R s ). The coupling strength in the bulk samples has been increased by increasing the sample density from 4.4 to 5.3 g/cm 3 , whereas in thin films, the same could be increased by increasing the c-axis orientation of the grains. The value of R s (10 GHz, 65 K) in bulk samples has been found to decrease from 52 to 4 mΩ with the increase of the coupling strength from 0.06 to 0.43 and in thin films from 930 to 600 μΩ with increase of the coupling strength from 0.92 to 2.43. The effect of grain decoupling on microwave surface resistance was studied under dc and microwave magnetic fields. The surface resistance increases gradually with the application of dc and microwave magnetic fields due to grain decoupling and finally gets saturated beyond a certain critical field. (author)

  8. Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

    2015-11-01

    The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

  9. Effect of substrate temperature on the optical parameters of thermally evaporated Ge-Se-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Pankaj, E-mail: pks_phy@yahoo.co.i [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India); Katyal, S.C. [Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173215 India (India)

    2009-05-01

    Thin films of Ge{sub 10}Se{sub 90-x}Te{sub x} (x = 0, 10, 20, 30, 40, 50) glassy alloys were deposited at three substrate temperatures (303 K, 363 K and 423 K) using conventional thermal evaporation technique at base pressure of {approx} 10{sup -4} Pa. X-ray diffraction results show that films deposited at 303 K are of amorphous nature while films deposited at 363 K and 423 K are of polycrystalline nature. The optical parameters, refractive index and optical gap have been derived from the transmission spectra (using UV-Vis-NIR spectrophotometer) of the thin films in the spectral region 400-1500 nm. This has been observed that refractive index values remain almost constant while the optical gap is found to decrease considerably with the increase of substrate temperature. The decrease in optical gap is explained on the basis of change in nature of films, from amorphous to polycrystalline state, with the increase of substrate temperature. The optical gap has also been observed to decrease with the increase of Te content.

  10. Lithographic technology for microwave integrated circuits

    OpenAIRE

    Shepherd, PR; Evans, PSA; Ramsey, BJ; Harrison, DJ

    1997-01-01

    Conductive lithographic films (CLFs) have been developed primarily as substitutes for resin/laminate boards, which share properties with the metallisation patterns used in planar microwave integrated circuits (MICs). The authors examine the microwave properties of the films and show that, although the losses are greater, they have potential as an alternative to the traditional manufacturing process of MICs.

  11. Dewetting and deposition of thin films with insoluble surfactants from curved silicone hydrogel substrates

    NARCIS (Netherlands)

    Bhamla, M.S.; Balemans, C.; Fuller, G.G.

    2015-01-01

    We investigate the stabilizing effect of insoluble surfactant monolayers on thin aqueous films. We first describe an experimental platform that enables the formation of aqueous films laden with dipalmitoylphosphatidylcholine (DPPC) monolayers on curved silicone hydrogel (SiHy) substrates. We show

  12. Characterization of the adhesion of thin film by Cross-Sectional Nanoindentation. Analysis of the substrate edge chipping and the film delamination

    Science.gov (United States)

    Felder, Eric; Roy, Sébastien; Darque-Ceretti, Evelyne

    2011-07-01

    Cross-Sectional Nanoindentation (CSN) is a recent method for adhesion measurement of nanoscale thin films in Ultra-Large Scale Integrated circuits. In the case of ductile thin films, the motion of the substrate chip implies significant plastic deformation of the film and complex geometry of delaminated areas. This article recalls first the experimental procedure and the two main features observed in this test performed on various plane copper films deposited on silicon: the critical force producing silicon edge chipping increases linearly with the distance of the indenter to the interface; on the section the delaminated length of the film ( a-b) is proportional to the residual silicon chip displacement u and the ratio S=u/(a-b) depends on the manufacturing process of the film, and is so related to its adhesion to the substrate. One proposes a simple analysis of the silicon edge chipping. Then a model of pull-off of an elastic-strain hardening plastic film is developed, which suggests an explanation for the delamination process. Application of the model to experimental results starting from films plastic properties deduced from nanoindentation measurements provides plausible results. Some improvements for performing the CSN test are proposed in order to make easier its interpretation.

  13. Frequency and Temperature Dependent Dielectric Properties of Free-standing Strontium Titanate Thin Films.

    Science.gov (United States)

    Dalberth, Mark J.; Stauber, Renaud E.; Anderson, Britt; Price, John C.; Rogers, Charles T.

    1998-03-01

    We will report on the frequency and temperature dependence of the complex dielectric function of free-standing strontium titanate (STO) films. STO is an incipient ferroelectric with electric-field tunable dielectric properties of utility in microwave electronics. The films are grown epitaxially via pulsed laser deposition on a variety of substrates, including lanthanum aluminate (LAO), neodymium gallate (NGO), and STO. An initial film of yttrium barium cuprate (YBCO) is grown on the substrate, followed by deposition of the STO layer. Following deposition, the sacrificial YBCO layer is chemically etched away in dilute nitric acid, leaving the substrate and a released, free-standing STO film. Coplanar capacitor structures fabricated on the released films allow us to measure the dielectric response. We observe a peak dielectric function in excess of 5000 at 35K, change in dielectric constant of over a factor of 8 for 10Volt/micron electric fields, and temperature dependence above 50K that is very similar to bulk material. The dielectric loss shows two peaks, each with a thermally activated behavior, apparently arising from two types of polar defects. We will discuss the correlation between dielectric properties, growth conditions, and strain in the free-standing STO films.

  14. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  15. Thickness dependent properties of CMR Manganite thin films on lattice mismatched substrates: Distinguishing Strain and Interface Effects

    Science.gov (United States)

    Davidson, Anthony, III; Kolagani, Rajeswari; Bacharova, Ellisaveta; Yong, Grace; Smolyaninova, Vera; Schaefer, David; Mundle, Rajeh

    2007-03-01

    Epitaxial thin films of CMR manganite materials have been known to show thickness dependent electrical and magnetic properties on lattice mismatched substrates. Below a critical thickness, insulator-metal transition is suppressed. These effects have been largely attributed to the role of bi-axial lattice mismatch strain. Our recent results of epitaxial thin films of La0.67Ca0.33MnO3 (LCMO) on two substrates with varying degrees of compressive lattice mismatch indicate that, in addition to the effect of lattice mismatch strain, the thickness dependence of the properties are influenced by other factors possibly related to the nature of the film substrate interface and defects such as twin boundaries. We have compared the properties of LCMO films on (100) oriented LaAlO3 and (001) oriented NdCaAlO4 both of which induce compressive bi-axial strain. Interestingly, the suppression of the insulator-metal transition is less in films on NCAO which has a larger lattice mismatch. We will present results correlating the electrical and magneto transport properties with the structure and morphology of the films.

  16. Formation of thin DLC films on SiO{sub 2}/Si substrate using FCVAD technique

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Aramwit, C.; Tippawan, U. [Plasma and Beam Physics Research Facility (PBP), Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D. [Plasma and Beam Physics Research Facility (PBP), Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Diamond-like carbon (DLC) films deposited on SiO{sub 2}/Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO{sub 2}/Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I{sub D}/I{sub G} ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I{sub D}/I{sub G} ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp{sup 3} site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp{sup 3} fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO{sub 2} substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC

  17. A new integrated microwave SQUID circuit design

    International Nuclear Information System (INIS)

    Erne, S.N.; Finnegan, T.F.

    1980-01-01

    In this paper we consider the design and operation of a planar thin-film rf-SQUID circuit which can be realized via microwave-integrated-circuit (MIC) techniques and which differs substantially from pervious microwave SQUID configurations involving either mechanical point-contact or cylindrical thin-film micro-bridge geometries. (orig.)

  18. The peculiarity of the formation of zinc films on a glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Tomaev, V. V., E-mail: tvaza@mail.ru [Saint Petersburg State University, 198504, Russia, Saint-Petersburg, Petrodvorets, Universitetskii pr. 26 (Russian Federation); Saint Petersburg Mining University, Russia, 199106, St. Petersburg, V.O., 21-st line, 2 (Russian Federation); Polishchuk, V. A., E-mail: vpvova2010@yandex.ru [St. Petersburg University of Information Technologies, Mechanics, and Optics, 197101, Russia, St. Petersburg, Kronverksky Pr., 49 (Russian Federation); Borisov, E. N., E-mail: enbor@bk.ru [Saint Petersburg State University, 198504, Russia, Saint-Petersburg, Petrodvorets, Universitetskii pr. 26 (Russian Federation)

    2016-06-17

    Thin Nanocrystalline films of the zinc have been fabricated by thermal spraying on the glass substrate. Morphologies and structure of the films had been investigated by the methods X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). It is found that the surface of the films has a different types of the nanocrystals zinc. Were detected intergrowths of two or more the nanocrystals, hexagonal shape. Using the theory of homogeneous and heterogeneous nucleation of a new phase, had been evaluated the geometrical and thermodynamic parameters nanocrystals zinc.

  19. Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Lin, Y.C.; Li, J.Y.; Yen, W.T.

    2008-01-01

    Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

  20. Enhancement in (BHmax of PLD-made isotropic Nd-Fe-B thick film magnets deposited on Si substrates

    Directory of Open Access Journals (Sweden)

    M. Nakano

    2017-05-01

    Full Text Available Increase in Nd contents of a PLD-made isotropic Nd-Fe-B thick-film magnet enabled us to enhance the thickness of the film magnet deposited on a Si substrate because the linear expansion coefficient of Nd is an intermediate value between Nd2Fe14B and Si. The large amount of Nd, however, degraded the residual magnetic polarization and (BHmax. In the study, we reduced the Nd contents of each Nd-Fe-B film by inserting a Nd or a Nd-rich Nd-Fe-B buffer layer between a Nd-Fe-B film and a Si substrate in order to suppress the mechanical destruction together with the improvement in magnetic properties. It was found that the mechanical property of a Nd-Fe-B film comprising the Nd-Fe-B buffer layer in the thickness range from 10 to 60 μm was superior than that of a sample with the Nd buffer layer. Resultantly, an average (BHmax value of Nd-Fe-B films with each Nd-Fe-B buffer layer deposited on Si substrates could be enhanced by approximately 15 kJ/m3 compared to that of non-buffer-layered films.