WorldWideScience

Sample records for film structures prepared

  1. Pd-Ni-MWCNT nanocomposite thin films: preparation and structure

    Science.gov (United States)

    Kozłowski, Mirosław; Czerwosz, ElŻbieta; Sobczak, Kamil

    2017-08-01

    The properties of nanocomposite palladium-nickel-multi-walled (Pd-Ni-MWCNT) films deposited on aluminum oxide (Al2O3) substrate have been prepared and investigated. These films were obtained by 3 step process consisted of PVD/CVD/PVD methods. The morphology and structure of the obtained films were characterized by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) techniques at various stages of the film formation. EDX spectrometer was used to measurements of elements segregation in the obtained film. TEM and STEM (Scanning Transmission Electron Microscopy) observations showed MWCNTs decorated with palladium nanoparticles in the film obtained in the last step of film formation (final PVD process). The average size of the palladium nanoparticles observed both on MWCNTs and carbonaceous matrix does not exceed 5 nm. The research was conducted on the use of the obtained films as potential sensors of gases (e.g. H2, NH3, CO2) and bio-sensors or optical sensors.

  2. Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

    Science.gov (United States)

    Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

    1995-09-01

    Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

  3. Preparation of BiOBr thin films with micro-nano-structure and their photocatalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Li, Rui [College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Fan, Caimei, E-mail: fancm@163.com [College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Zhang, Xiaochao, E-mail: zhang13598124761@163.com [College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Wang, Yawen; Wang, Yunfang [College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Zhang, Hui [Particle Technology Research Centre, Department of Chemical and Biochemical Engineering, The University of Western Ontario, London, Ontario N6A 5B9 (Canada)

    2014-07-01

    A series of micro-nano-structure BiOBr thin films were prepared at a low temperature by the alcoholysis-coating method using BiBr{sub 3} as precursor. The as-prepared films were characterized by X-ray powder diffraction, scanning electron microscopy, and Brunauer–Emmett–Teller surface area. The obtained results indicated that micro-nano-structure tetragonal BiOBr films with different intensity ratios of (110) to (102) characteristic peaks could be synthesized through controlling the reaction temperature and the calcination temperatures. Furthermore, the photocatalytic activities of BiOBr thin films with different preparation conditions have been evaluated by the degradation of methyl orange (MO) under UV light irradiation, suggesting that the photocatalytic activity should be closely related to the solvent, the alcoholysis reaction temperature, and the calcining temperature. The best photocatalytic degradation efficiency of MO for BiOBr thin films reaches 98.5% under 2.5 h UV irradiation. The BiOBr thin films display excellent stability and their photocatalytic activity still remains above 90% after being used five times. The main reasons for the higher photocatalytic activity of micro-nano-structure BiOBr microspheres have been investigated. In addition, the possible formation mechanism of BiOBr thin films with micro-nano-structure and excellent photocatalytic activity was proposed and discussed. - Highlights: • The BiOBr film was prepared at low temperature via alcoholysis-coating method. • The optimum process conditions of preparing BiOBr film were discussed. • As-prepared BiOBr films were composed of micro-nano flake structures. • The BiOBr films demonstrated excellent photocatalytic activity. • The formation mechanism of BiOBr films with high activity was proposed.

  4. Strong composite films with layered structures prepared by casting silk fibroin-graphene oxide hydrogels

    Science.gov (United States)

    Huang, Liang; Li, Chun; Yuan, Wenjing; Shi, Gaoquan

    2013-04-01

    Composite films of graphene oxide (GO) sheets and silk fibroin (SF) with layered structures have been prepared by facile solution casting of SF-GO hydrogels. The as-prepared composite film containing 15% (by weight, wt%) of SF shows a high tensile strength of 221 +/- 16 MPa and a failure strain of 1.8 +/- 0.4%, which partially surpass those of natural nacre. Particularly, this composite film also has a high modulus of 17.2 +/- 1.9 GPa. The high mechanical properties of this composite film can be attributed to its high content of GO (85 wt%), compact layered structure and the strong hydrogen bonding interaction between SF chains and GO sheets.Composite films of graphene oxide (GO) sheets and silk fibroin (SF) with layered structures have been prepared by facile solution casting of SF-GO hydrogels. The as-prepared composite film containing 15% (by weight, wt%) of SF shows a high tensile strength of 221 +/- 16 MPa and a failure strain of 1.8 +/- 0.4%, which partially surpass those of natural nacre. Particularly, this composite film also has a high modulus of 17.2 +/- 1.9 GPa. The high mechanical properties of this composite film can be attributed to its high content of GO (85 wt%), compact layered structure and the strong hydrogen bonding interaction between SF chains and GO sheets. Electronic supplementary information (ESI) available: XPS spectrum of the SF-GO hybrid film, SEM images of lyophilized GO dispersion and the failure surface of GO film. See DOI: 10.1039/c3nr00196b

  5. Structure and giant magnetoresistance of carbon-based amorphous films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ma, L.; He, M.F.; Liu, Z.W.; Zeng, D.C.; Gu, Z.F.; Cheng, G.

    2014-01-01

    Pure amorphous carbon (a-C) and Co-doped Co x C 1−x films were prepared on n-Si(100) substrates by dc magnetron sputtering. In Co–C films, the nano-sized amorphous Co particles were homogeneously dispersed in the amorphous cross-linked carbon matrix. The structures of a-C and Co x C 1−x films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. The results showed that the a-C films were diamond-like carbon (DLC) films. After doping cobalt into DLC film, the sp 3 -hybridized carbon content in DLC composite films almost had no change. The as-deposited Co x C 1−x granular films had larger value of magnetoresistance (MR) than the amorphous carbon film. A very high positive MR, up to 15.5% at magnetic field B = 0.8 T and x = 2.5 at.% was observed in a Co x C 1−x granular film with thickness of 80 nm at room temperature when the external magnetic field was perpendicular to the electric current and the film surface. With increase of the film thickness and Co-doped content, the MR decreased gradually. It remains a challenge to well explain the observed MR effect in the Co x C 1−x granular films. - Highlights: • The amorphous carbon films were diamond-like carbon films. • No carbide appearing, the Co–C composite films form a good metal/insulator system. • A high positive magnetoresistance, up to 15.5% at B = 0.8 T was observed in Co–C films

  6. Preparation of mesoporous carbon nitride structure by the dealloying of Ni/a-CN nanocomposite films

    Science.gov (United States)

    Zhou, Han; Shen, Yongqing; Huang, Jie; Liao, Bin; Wu, Xianying; Zhang, Xu

    2018-05-01

    The preparation of mesoporous carbon nitride (p-CN) structure by the selective dealloying process of Ni/a-CN nanocomposite films is investigated. The composition and structure of the Ni/a-CN nanocomposite films and porous carbon nitride (p-CN) films are determined by scan electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Phase separated structure including nickel carbide phase and the surrounding amorphous carbon nitride (a-CN) matrix are detected for the as-deposited films. Though the bulk diffusion is introduced in the film during the annealing process, the grain sizes for the post-annealed films are around 10 nm and change little comparing with the ones of the as-deposited films, which is associated with the thermostability of the CN surrounding in the film. The p-CN skeleton with its pore size around 12.5 nm is formed by etching the post-annealed films, indicative of the stability of the phase separated structure during the annealing process.

  7. Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

    KAUST Repository

    Yang, Yang; Yao, Yingbang; Zhang, Q.; Zhang, Xixiang

    2014-01-01

    Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences

  8. Study of the structural evolutions of crystalline tungsten oxide films prepared using hot-filament CVD

    International Nuclear Information System (INIS)

    Feng, P X; Wang, X P; Zhang, H X; Yang, B Q; Wang, Z B; Gonzalez-BerrIos, A; Morell, G; Weiner, B

    2007-01-01

    Structural evolutions of tungsten oxide(WO 3 ) samples on different substrates are studied using Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy. The WO 3 samples are prepared using hot-filament CVD techniques. The focus of the study is on the evolutions of nano structures at different stages following deposition time. The experimental measurements reveal evolutions of the surface structures from uniform film to fractal-like structures, and eventually to nano particles, and crystalline structures from mono (0 1 0) crystalline thin film to polycrystalline thick film developments. The effect of high temperature on the nanostructured WO 3 is also investigated. Well-aligned nanoscale WO 3 rod arrays are obtained at a substrate temperature of up to 1400 deg. C. Further increasing the substrate temperature yields microscale crystalline WO 3 particles

  9. Super-hydrophobic nickel films with micro-nano hierarchical structure prepared by electrodeposition

    International Nuclear Information System (INIS)

    Hang Tao; Hu Anmin; Ling Huiqin; Li Ming; Mao Dali

    2010-01-01

    Super-hydrophobic nickel films were prepared by a simple and low cost electrodepositing method. The surface morphologies of the films characterized by scanning electronic microscope exhibit hierarchical structure with micro-nanocones array, which can be responsible for their super-hydrophobic characteristic (water contact angle over 150 o ) without chemical modification. The wettability of the film can be varied from super-hydrophobic (water contact angle 154 o ) to relatively hydrophilic (water contact angle 87 o ) by controlling the size of the micro-nanocones. The mechanism of the hydrophobic characteristic of nickel films with this unique structure was illustrated by several models. Such micro-nanostructure and its special wettability are expected to be applied in the practical industry.

  10. Structural properties of pure and Fe-doped Yb films prepared by vapor condensation

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Ayala, C., E-mail: chachi@cbpf.br [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Lima, P.O.B. 14-149, Lima 14 (Peru); Passamani, E.C. [Departamento de Física, Universidade Federal do Espírito Santo, Vitória 29075-910, ES (Brazil); Suguihiro, N.M. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Litterst, F.J. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Institut für Physik der Kondensierten Materie, Technische Universität Braunschweig, 38106 Braunschweig (Germany); Baggio Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil)

    2014-10-15

    Ytterbium and iron-doped ytterbium films were prepared by vapor quenching on Kapton substrates at room temperature. Structural characterization was performed by X-ray diffraction and transmission electron microscopy. The aim was to study the microstructure of pure and iron-doped films and thereby to understand the effects induced by iron incorporation. A coexistence of face centered cubic and hexagonal close packed-like structures was observed, the cubic-type structure being the dominant contribution. There is an apparent thickness dependence of the cubic/hexagonal relative ratios in the case of pure ytterbium. Iron-clusters induce a crystalline texture effect, but do not influence the cubic/hexagonal volume fraction. A schematic model is proposed for the microstructure of un-doped and iron-doped films including the cubic- and hexagonal-like structures, as well as the iron distribution in the ytterbium matrix. - Highlights: • Pure and Fe-doped Yb films have been prepared by vapor condensation. • Coexistence of fcc- and hcp-type structures was observed. • No oxide phases have been detected. • Fe-clustering does not affect the fcc/hcp ratio, but favors a crystalline texture. • A schematic model is proposed to describe microscopically the microstructure.

  11. Structural and optical characteristics of SnS thin film prepared by SILAR

    Directory of Open Access Journals (Sweden)

    Mukherjee A.

    2015-12-01

    Full Text Available SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR method. The films were prepared using tin chloride as tin (Sn source and ammonium sulfide as sulphur (S source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

  12. Preparation, Structural and Dielectric Properties of Solution Grown Polyvinyl Alcohol(PVA) Film

    Science.gov (United States)

    Nangia, Rakhi; Shukla, Neeraj K.; Sharma, Ambika

    2017-08-01

    Flexible dielectrics with high permittivity have been investigated extensively due to their applications in electronic industry. In this work, structural and electrical characteristics of polymer based film have been analysed. Poly vinyl alcohol (PVA) film was prepared by solution casting method. X-ray diffraction (XRD) characterization technique is used to investigate the structural properties. The semi-crystalline nature has been determined by the analysis of the obtained XRD pattern. Electrical properties of the synthesized film have been analysed from the C-V and I-V curves obtained at various frequencies and temperatures. Low conductivity values confirm the insulating behaviour of the film. However, it is found that conductivity increases with temperature. Also, the dielectric permittivity is found to be higher at lower frequencies and higher temperatures, that proves PVA to be an excellent dielectric material which can be used in interface electronics. Dielectric behaviour of the film has been explained based on dipole orientations to slow and fast varying electric field. However further engineering can be done to modulate the structural, electrical properties of the film.

  13. NiFe epitaxial films with hcp and fcc structures prepared on bcc-Cr underlayers

    Energy Technology Data Exchange (ETDEWEB)

    Higuchi, Jumpei, E-mail: higuchi@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Sato, Yoichi [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan); Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2011-09-30

    NiFe epitaxial films are prepared on Cr(211){sub bcc} and Cr(100){sub bcc} underlayers grown hetero-epitaxially on MgO single-crystal substrates by ultra-high vacuum rf magnetron sputtering. The film growth behavior and the crystallographic properties are studied by reflection high energy electron diffraction and pole figure X-ray diffraction. Metastable hcp-NiFe(11-bar 00) and hcp-NiFe(112-bar 0) crystals respectively nucleate on Cr(211){sub bcc} and Cr(100){sub bcc} underlayers, where the hcp-NiFe crystals are stabilized through hetero-epitaxial growth. The hcp-NiFe(11-bar 00) crystal is a single-crystal with the c-axis parallel to the substrate surface, whereas the hcp-NiFe(112-bar 0) crystal is a bi-crystal with the respective c-axes lying in plane and perpendicular each other. With increasing the film thickness, the hcp structure in the NiFe films starts to transform into more stable fcc structure by atomic displacement parallel to the hcp(0001) close packed plane. The resulting films consist of hcp and fcc crystals.

  14. NiFe epitaxial films with hcp and fcc structures prepared on bcc-Cr underlayers

    International Nuclear Information System (INIS)

    Higuchi, Jumpei; Ohtake, Mitsuru; Sato, Yoichi; Kirino, Fumiyoshi; Futamoto, Masaaki

    2011-01-01

    NiFe epitaxial films are prepared on Cr(211) bcc and Cr(100) bcc underlayers grown hetero-epitaxially on MgO single-crystal substrates by ultra-high vacuum rf magnetron sputtering. The film growth behavior and the crystallographic properties are studied by reflection high energy electron diffraction and pole figure X-ray diffraction. Metastable hcp-NiFe(11-bar 00) and hcp-NiFe(112-bar 0) crystals respectively nucleate on Cr(211) bcc and Cr(100) bcc underlayers, where the hcp-NiFe crystals are stabilized through hetero-epitaxial growth. The hcp-NiFe(11-bar 00) crystal is a single-crystal with the c-axis parallel to the substrate surface, whereas the hcp-NiFe(112-bar 0) crystal is a bi-crystal with the respective c-axes lying in plane and perpendicular each other. With increasing the film thickness, the hcp structure in the NiFe films starts to transform into more stable fcc structure by atomic displacement parallel to the hcp(0001) close packed plane. The resulting films consist of hcp and fcc crystals.

  15. Experimental studies on the electronic structure of pyrite FeS2 films prepared by thermally sulfurizing iron films

    International Nuclear Information System (INIS)

    Zhang Hui; Wang Baoyi; Zhang Rengang; Zhang Zhe; Wei Long; Qian Haijie; Su Run; Kui Rexi

    2006-01-01

    Pyrite FeS 2 films have been prepared by thermally sulfurizing iron films deposited by magnetron sputtering. The electronic structures were studies by X-ray absorption near edge structure and X-ray photoemission spectrum. The results show that an S 3p valence band with relatively higher intensity compared to the calculation exists in 2-10 eV range and a high density below the Fermi level of Fe 3d states were detected. A second gap of 2.8 eV in the unoccupied density of states was found above the conduction band which was 2.4 eV by experimentally calculation. The difference between t 2g and e g which were formed in an octahedral crystal field was computed to be 2.1 eV. (authors)

  16. INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

    OpenAIRE

    BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

    2013-01-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

  17. Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

    KAUST Repository

    García-Cerda, L. A.

    2010-03-01

    In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.

  18. Chemical state and phase structure of (TaNbTiW)N films prepared by combined magnetron sputtering and PBII

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Xingguo [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tang, Guangze [National Key Laboratory of Materials Behavior and Evaluation in Space Environment, Harbin Institute of Technology, Harbin 150001 (China); Sun, Mingren [National Key Laboratory of Science and Technology on Precision Hot Processing of Metals Harbin Institute of Technology, Harbin Institute of Technology, Harbin 150001 (China); Ma, Xinxin, E-mail: maxin@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Liqin [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin, 150001 (China)

    2013-09-01

    (TaNbTiW)N films with thickness of ∼1000 nm are prepared on titanium alloy substrate by combined magnetron sputtering deposition and nitrogen plasma based ion implantation (N-PBII). Chemical state of the elements and phase structure of the films are investigated using X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), respectively. The bonds of Ta-N, Nb-N, Ti-N-O and Ta-O are detected in the (TaNbTiW)N films, however both W-N and W-O are not found. The initial alloy film has a BCC structure, while the films with N-PBII treatment are composed of BCC and FCC structures. The hardness and elastic modulus of the films can be improved by increasing nitrogen implantation dose and reach maximum values of 9.0 GPa and 154.1 GPa, respectively.

  19. Effect of annealing on the electrical, optical and structural properties of cadmium stannate thin films prepared by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Kumaravel, R.; Krishnakumar, V.; Gokulakrishnan, V.; Ramamurthi, K.; Jeganathan, K.

    2010-01-01

    Polycrystalline thin films of cadmium stannate (Cd 2 SnO 4 ) were deposited by spray pyrolysis method on the Corning substrates at substrate temperature of 525 o C. Further, the films were annealed at 600 o C in vacuum for 30 min. These films were characterized for their structural, electrical and optical properties. The experimental results showed that the post-deposition annealing in vacuum has a significant influence on the properties of the films. The average grain size of the film was increased from 27.3 to 35.0 nm on heat treatment. The average optical transmittance in the visible region (500-850 nm) is decreased from 81.4% to 73.4% after annealing in vacuum. The minimum resistivity achieved in the present study for the vacuum annealed films is the lowest among the reported values for the Cd 2 SnO 4 thin films prepared by spray pyrolysis method.

  20. Optical and structural properties of ZnO/ZnMgO composite thin films prepared by sol–gel technique

    International Nuclear Information System (INIS)

    Xu, Linhua; Su, Jing; Chen, Yulin; Zheng, Gaige; Pei, Shixin; Sun, Tingting; Wang, Junfeng; Lai, Min

    2013-01-01

    Highlights: ► ZnMgO thin film and ZnO/ZnMgO composite thin film have been prepared by sol–gel method. ► The intensity of ultraviolet emission of ZnMgO thin film is enhanced two times compared with that of pure ZnO thin film. ► Compared with ZnMgO thin film, ZnO/ZnMgO composite thin film shows better crystallization and optical properties. ► ZnO/ZnMgO composite thin films prepared by sol–gel method have potential applications in many optoelectronic devices. - Abstract: In this study, pure ZnO thin film, Mg-doped ZnO (ZnMgO) thin film, ZnO/ZnMgO and ZnMgO/ZnO composite thin films were prepared by sol–gel technique. The structural and optical properties of the samples were analyzed by X-ray diffraction, scanning electron microscopy, UV–visible spectrophotometer, ellipsometer and photoluminescence spectra, respectively. The results showed that the incorporation of Mg increased the strain, broadened the optical bandgap, and improved the intensity of ultraviolet emission of ZnO thin film. The full width at half maximum (FWHM) of the ultraviolet emission peak was also increased due to Mg-doping at the same time. Compared with pure ZnO and ZnMgO thin films, the ZnO/ZnMgO thin film showed better crystalline quality and ultraviolet emission performance, smaller strains and higher transmittance in the visible range.

  1. Structure, electrochromic and optical properties of WO3 film prepared by dip coating-pyrolysis

    International Nuclear Information System (INIS)

    Yang Haitao; Shang Fuliang; Gao Ling; Han Haitao

    2007-01-01

    The tungsten oxide (WO 3 ) film was grown by dip coating-pyrolysis method with the PEG-400 as the structure-directing agent. Microstructure of the WO 3 film was characterized by TG-DSC, XRD and SEM techniques. It was found that the film annealed at 350 deg. C for 2 h comprised cubic WO 3 and orthorhombic WO 3 . The measurements of the cyclic voltammetry (CV) and UV-vis spectrum suggested that the WO 3 film had a good electrochromic reversibility performance. The film possessed excellent modulation to the visible light and the maximal average transmittance modulation reached 70.06%

  2. On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

    International Nuclear Information System (INIS)

    Chuang, M.J.; Huang, H.F.; Wen, C.H.; Chu, A.K.

    2010-01-01

    Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1 s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 o C. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film surfaces.

  3. Structure, morphology and optical properties of CuInS2 thin films prepared by modulated flux deposition

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.; Gutierrez, M.T.; Briones, F.

    2005-01-01

    The structure, morphology and optical properties of copper indium sulfide thin films prepared by a novel modulated flux deposition procedure have been investigated for layers from 200 to 400 nm thickness. These polycrystalline CuInS 2 films grown onto glass substrates showed CuAu-like structure, similar to epitaxial CuInS 2 films grown onto monocrystalline substrates, and direct band gap values Eg=1.52-1.55 eV, optimum for single-junction photovoltaic applications. The increase in the layer thickness leads to growth of the average crystallite size and increases slightly the surface roughness and the absorption coefficient

  4. Effect of thermal annealing on structural properties of SrGa2S4:Ce thin films prepared by flash evaporation

    International Nuclear Information System (INIS)

    Gambarov, E.F.; Bayramov, A.I.

    2009-01-01

    In the present report the preparation technology and structural characterization of Ce 3 +activated SrGa 2 S 4 thin films are given. SrGa 2 S 4 : e thin films are prepared by so called flash evaporation which is simple and inexpensive method for thin film deposition. X-ray diffraction shows that the as deposited films exhibit amorphous behavior, but after annealing in H S stream, the polycrystalline one. EPMA results indicate nearly stoichiometric composition of the thin films

  5. The influence of the preparation conditions on structure and optical properties of solid films of graphene oxide

    International Nuclear Information System (INIS)

    Seliverstova, E; Ibrayev, N; Dzhanabekova, R; Gladkova, V

    2016-01-01

    In this study, we investigated the physico-chemical properties of graphene oxide monolayers at the interface water-air. Monolayers were formed by the spreading of dispersion of graphene oxide in acetone and THF. It was found than graphene monolayers are in the “liquid” state on the surface of subphase. Monolayers were transferred onto solid substrates according to Langmuir-Blodgett (LB) method. SEM images show that the films have an island structure. The films obtained from acetone solutions are more uniform, which makes them more promising in terms of their use as conductive coatings. Absorption spectrum of graphene LB films exhibits a broad band in the ultraviolet and visible region of the spectrum. The optical density of the film obtained from acetone solution is greater than the optical density of the film prepared from THF. In the visible region of the spectrum both films have high transparency. (paper)

  6. Structure, optical and electrical properties of indium tin oxide ultra thin films prepared by jet nebulizer spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    M. Thirumoorthi

    2016-03-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared by jet nebulizer spray pyrolysis technique for different Sn concentrations on glass substrates. X-ray diffraction patterns reveal that all the films are polycrystalline of cubic structure with preferentially oriented along (222 plane. SEM images show that films exhibit uniform surface morphology with well-defined spherical particles. The EDX spectrum confirms the presence of In, Sn and O elements in prepared films. AFM result indicates that the surface roughness of the films is reduced as Sn doping. The optical transmittance of ITO thin films is improved from 77% to 87% in visible region and optical band gap is increased from 3.59 to 4.07 eV. Photoluminescence spectra show mainly three emissions peaks (UV, blue and green and a shift observed in UV emission peak. The presence of functional groups and chemical bonding was analyzed by FTIR. Hall effect measurements show prepared films having n-type conductivity with low resistivity (3.9 × 10−4 Ω-cm and high carrier concentrations (6.1 × 1020 cm−3.

  7. Investigation of the composition-structure-property relationship of AsxTe100 - x films prepared by plasma deposition

    Science.gov (United States)

    Mochalov, Leonid; Dorosz, Dominik; Nezhdanov, Aleksey; Kudryashov, Mikhail; Zelentsov, Sergey; Usanov, Dmitry; Logunov, Alexandr; Mashin, Aleksandr; Gogova, Daniela

    2018-02-01

    AsxTe100 - x amorphous films of different chemical content were prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD). For the first time the optical properties of As-Te chalcogenide materials have been measured in UV-VIS-IR ranges (from 0.2 to 25 μm) for a very wide range of chemical compositions (20-80 at.% As). As-Te films have been tuned from 0.80 to 1.10 eV. The IR results obtained have been juxtaposed with the Raman spectroscopy findings to establish the correlation between optical and structural properties of the materials developed. Reversible and irreversible changes in the phase composition of the As-Te films under annealing of the surface by laser irradiation have been demonstrated and studied. In order to determine the potential areas of application of the prepared As-Te films the thermal and photo sensitivity has been also investigated.

  8. Structural and electrical transport properties of La2Mo2O9 thin films prepared by pulsed laser deposition

    Science.gov (United States)

    Paul, T.; Ghosh, A.

    2017-04-01

    We have studied the structure and electrical properties of La2Mo2O9 thin films of different thicknesses prepared by the laser deposition technique at different substrate temperatures. The structural properties of the thin films have been investigated using XRD, XPS, AFM, TEM, SEM, and Raman spectroscopy. The electrical transport properties of the thin films have been investigated in wide temperature and frequency ranges. The cubic nature of the thin films has been confirmed from structural analysis. An enhancement of the oxygen ion conductivity of the films up to five orders of magnitude is obtained compared to that of the bulk La2Mo2O9, suggesting usefulness of the thin films as electrolytes in micro-solid oxide fuel cells. The enhanced dc ionic conductivity of the thin films has been interpreted using the rule of the mixture model, while a power law model has been used to investigate the frequency and temperature dependences of the conductivity. The analysis of the results predicts the three-dimensional oxygen ion conduction in the thin films.

  9. Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

    KAUST Repository

    Garcí a-Cerda, L. A.; Puente-Urbina, B. A.; Quevedo-Ló pez, Manuel Angel Quevedo; Gnade, Bruce E.; Baldenegro-Pé rez, Leonardo Aurelio; Alshareef, Husam N.; Herná ndez-Landaverde, Martí n Adelaido

    2010-01-01

    In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological

  10. Influence of boat material on the structure, stoichiometry and optical properties of gallium sulphide films prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Rao, Pritty; Kumar, Sanjiv; Sahoo, N.K.

    2015-01-01

    The paper describes the deposition of thin films of gallium sulphide on soda-lime glass substrates by thermal evaporation of chemically synthesized powders consisting of gallium sulphide and gallium oxyhydroxide from a Mo or Ta boat and the evolution of their compositional, structural and optical properties on vacuum annealing. The films deposited from Mo or Ta boats possessed distinctly different properties. The Mo-boat evaporated pristine films were amorphous, transparent (α ∼ 10 3  cm −1 ) in visible region and had a direct band gap of about 3.2 eV. Vacuum annealing at 723 K brought about their crystallization predominantly into cubic γ-Ga 2 S 3 and a blue shift by about 0.2 eV. The Ta-boat evaporated pristine films were also amorphous but were absorbing (α ∼ 10 4  cm −1 ) and had a direct band gap of about 2.1 eV. These crystallized into hexagonal GaS and experienced a blue shift by more than 1.0 eV on vacuum annealing at 723 K. The dissimilar properties of the two kinds of films arose mainly from their different atomic compositions. The Mo-boat evaporated pristine films contained Ga and S in ∼1:1 atomic proportions while those prepared using Ta-boat were Ga rich which impaired their transmission characteristics. The former composition favoured the stabilization of S rich gallium sulphide (Ga 2 S 3 ) phase while the latter stabilised S deficient species, GaS. Besides inducing crystallization, vacuum annealing at 723 K also caused the diffusion of Ga in excess of atomic composition of the phase formed, into soda-lime glass which improved the optical transmission of the films. Gallium oxyhydroxide, an inevitable co-product of the chemical synthetic process, in the evaporant introduced oxygen and hydrogen impurities in the films which do not seem to significantly influence their optical properties. - Highlights: • Gallium sulphide films are prepared by thermal evaporation from a Mo or Ta boat. • Mo-boat prepared pristine film has Ga

  11. Laser-assisted preparation and photoelectric properties of grating-structured Pt/FTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Nai-fei, E-mail: rnf_ujs@126.com [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing, E-mail: lij_huang@126.com [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Li, Bao-jia [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Zhou, Ming [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

    2014-09-30

    Highlights: • Pt layers were deposited by DC magnetron sputtering on commercial FTO glasses. • Pt/FTO films were irradiated by laser for inducing gratings and annealing. • An ideal grating-structured Pt/FTO film was obtained using a fluence of 1.05 J/cm{sup 2}. • The grating-structured Pt/FTO film exhibited excellent photoelectric properties. • Laser-assisted treatment is effective for improving performance of FTO-based films. - Abstract: In order to improve the transparency and conductivity of commercial fluorine-doped tin oxide (FTO) glass, platinum (Pt) layers were deposited on the FTO film by direct current (DC) magnetron sputtering, followed by being irradiating with a 532 nm nanosecond pulsed laser for the dual purpose of inducing grating structures and annealing. Introducing a Pt layer decreased the average transmittance (400–800 nm) and the sheet resistance of the initial FTO film from 80.2% and 8.4 Ω/sq to 68.6% and 7.9 Ω/sq, respectively. The ideal grating-structured Pt/FTO film was obtained by laser irradiation with a fluence of 1.05 J/cm{sup 2}, and X-ray diffraction (XRD) analysis confirmed that this film underwent optimal annealing. As a result, it exhibited an average transmittance (400–800 nm) of 84.1% and a sheet resistance of 6.8 Ω/sq. These results indicated that laser-assisted treatment combined with introduction of metal layer can effectively improve photoelectric properties of FTO single-layer films.

  12. Preparation, structural and luminescent properties of nanocrystalline ZnO films doped Ag by close space sublimation method

    Science.gov (United States)

    Khomchenko, Viktoriya; Mazin, Mikhail; Sopinskyy, Mykola; Lytvyn, Oksana; Dan'ko, Viktor; Piryatinskii, Yurii; Demydiuk, Pavlo

    2018-05-01

    The simple way for silver doping of ZnO films is presented. The ZnO films were prepared by reactive rf-magnetron sputtering on silicon and sapphire substrates. Ag doping is carried out by sublimation of the Ag source located at close space at atmospheric pressure in air. Then the ZnO and ZnO-Ag films were annealed in wet media. The microstructure and optical properties of the films were compared and studied by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL) and cathodoluminescence (CL). XRD results indicated that all the ZnO films have a polycrystalline hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. The annealing and Ag doping promote increasing grain's sizes and modification of grain size distribution. The effect of substrate temperature, substrate type, Ag doping and post-growth annealing of the films was studied by PL spectroscopy. The effect of Ag doping was obvious and identical for all the films, namely the wide visible bands of PL spectra are suppressed by Ag doping. The intensity of ultraviolet band increased 15 times as compared to their reference films on sapphire substrate. The ultraviolet/visible emission ratio was 20. The full width at half maximum (FWHM) for a 380 nm band was 14 nm, which is comparable with that of epitaxial ZnO. The data implies the high quality of ZnO-Ag films. Possible mechanisms to enhance UV emission are discussed.

  13. Substrate temperature effects on the structure and properties of ZnMnO films prepared by pulsed laser deposition

    Science.gov (United States)

    Riascos, H.; Duque, J. S.; Orozco, S.

    2017-01-01

    ZnMnO thin films were grown on silicon substrates by pulsed laser deposition (PLD). Pulsed Nd:YAG laser was operated at a wavelength of 1064 nm and 100 mJ. ZnMnO thin films were deposited at the vacuum pressure of 10-5 Torr and with substrate temperature from room temperature to 600 °C. The effects of substrate temperature on the structural and Optical properties of ZnMnO thin films have been investigated by X-ray diffraction (XRD), Raman spectroscopy and Uv-vis spectroscopy. From XRD data of the samples, it can be showed that temperature substrate does not change the orientation of ZnMnO thin films. All the films prepared have a hexagonal wurtzite structure, with a dominant (002) peak around 2θ=34.44° and grow mainly along the c-axis orientation. The substrate temperature improved the crystallinity of the deposited films. Uv-vis analysis showed that, the thin films exhibit high transmittance and low absorbance in the visible region. It was found that the energy band to 300 ° C is 3.2 eV, whereas for other temperatures the values were lower. Raman reveals the crystal quality of ZnMnO thin films.

  14. Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

    KAUST Repository

    Yang, Yang

    2014-11-01

    Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences. The symmetries of the fundamental Raman modes in 50-700 cm-1 were identified based on group theory. The symmetries of the high order Raman modes in 900-1500 cm-1 of BiFeO3 are determined for the first time, which can provide strong clarifications to the symmetry of the fundamental peaks in 400-700 cm-1 in return. Moreover, the lattice structures of BiFeO3 films are identified consequently on the basis of Raman spectroscopy. BiFeO3 films on SrRuO3 coated SrTiO3 (0 0 1) substrate, CaRuO3 coated SrTiO3 (0 0 1) substrate and tin-doped indium oxide substrate are found to be in the rhombohedral structure, while BiFeO3 film on SrRuO3 coated Nb: SrTiO3 (0 0 1) substrate is in the monoclinic structure. Our results suggest that polarized Raman spectroscopy would be a feasible tool to study the lattice structure of BiFeO3 films.

  15. Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    M. K. DEORE

    2010-08-01

    Full Text Available Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 oC, 600 oC and 650 oC for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity to H2S gas (100 ppm at 250 oC for firing temperature 650 oC. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDX and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity, selectivity, response and recovery time of the sensor were measured and presented.

  16. Structural and mechanical properties of nc-TiC/a-C:H nanocomposite film prepared by dual plasma technique

    International Nuclear Information System (INIS)

    Wang Yaohui; Zhang Xu; Wu Xianying; Li Qiang; Zhang Huixing; Zhang Xiaoji

    2008-01-01

    Nanocomposite nc-TiC/a-C:H film, with an unusual combination of superhardness, high elastic modulus and high elastic recovery, are prepared by using the dual plasma technique. The effects of the filter coil current on the compositional, structural and mechanical properties of the nc-TiC/a-C:H films have been investigated. X-ray photoelectron spectroscopy (XPS) and Raman analyses show that deposition rate, composition and nanostructure of the nc-TiC/a-C:H films could be changed by varying the filter coil current. Fortunately, by selecting the proper value for the filter coil current, 2.5 A, one could remarkably enhance mechanical properties of films such as the superhardness (66.4 GPa), the high elastic modulus (510 GPa) and the high elastic recovery (83.3%)

  17. Structural, optical and nonlinear optical studies of AZO thin film prepared by SILAR method for electro-optic applications

    Science.gov (United States)

    Edison, D. Joseph; Nirmala, W.; Kumar, K. Deva Arun; Valanarasu, S.; Ganesh, V.; Shkir, Mohd.; AlFaify, S.

    2017-10-01

    Aluminium doped (i.e. 3 at%) zinc oxide (AZO) thin films were prepared by simple successive ionic layer adsorption and reaction (SILAR) method with different dipping cycles. The structural and surface morphology of AZO thin films were studied by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical parameters such as, transmittance, band gap, refractive index, extinction coefficient, dielectric constant and nonlinear optical properties of AZO films were investigated. XRD pattern revealed the formation of hexagonal phase ZnO and the intensity of the film was found to increase with increasing dipping cycle. The crystallite size was found to be in the range of 29-37 nm. Scanning Electron Microscope (SEM) images show the presence of small sized grains, revealing that the smoothest surface was obtained at all the films. The EDAX spectrum of AZO conforms the presence of Zn, O and Al. The optical transmittance in the visible region is high 87% and the band gap value is 3.23 eV. The optical transmittance is decreased with respect to dipping cycles. The room temperature PL studies revealed that the AZO films prepared at (30 cycles) has good film quality with lesser defect density. The third order nonlinear optical parameters were also studied using Z-scan technique to know the applications of deposited films in nonlinear devices. The third order nonlinear susceptibility value is found to be 1.69 × 10-7, 3.34 × 10-8, 1.33 × 10-7and 2.52 × 10-7 for AZO films deposited after 15, 20, 25 and 30 dipping cycles.

  18. Structural study of thin films prepared from tungstate glass matrix by Raman and X-ray absorption spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Montanari, Bianca; Barbosa, Anne J.; Ribeiro, Sidney J.L.; Messaddeq, Younes [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, UNESP, CP 355, CEP 14800-900 Araraquara, SP (Brazil); Poirier, Gael [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000 Alfenas, MG (Brazil)], E-mail: gael@unifal-mg.edu.br; Li, Maximo S. [Instituto de Fisica, USP, CP 369, CEP 13560-970 Sao Carlos, SP (Brazil)

    2008-06-30

    Thin films were prepared using glass precursors obtained in the ternary system NaPO{sub 3}-BaF{sub 2}-WO{sub 3} and the binary system NaPO{sub 3}-WO{sub 3} with high concentrations of WO{sub 3} (above 40% molar). Vitreous samples have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. Several structural characterizations were performed by Raman spectroscopy and X-ray Absorption Near Edge Spectroscopy (XANES) at the tungsten L{sub I} and L{sub III} absorption edges. XANES investigations showed that tungsten atoms are only sixfold coordinated (octahedral WO{sub 6}) and that these films are free of tungstate tetrahedral units (WO{sub 4}). In addition, Raman spectroscopy allowed identifying a break in the linear phosphate chains as the amount of WO{sub 3} increases and the formation of P-O-W bonds in the films network indicating the intermediary behavior of WO{sub 6} octahedra in the film network. Based on XANES data, we suggested a new attribution of several Raman absorption bands which allowed identifying the presence of W-O{sup -} and W=O terminal bonds and a progressive apparition of W-O-W bridging bonds for the most WO{sub 3} concentrated samples (above 40% molar) attributed to the formation of WO{sub 6} clusters.

  19. Structural, optical and magnetic properties of Mn diffusion-doped CdS thin films prepared by vacuum evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Aksu, S. [SoloPower, Inc., 5981 Optical Ct., San Jose, CA 95138 (United States); Bacaksiz, E., E-mail: eminb@ktu.edu.tr [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Parlak, M. [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Yilmaz, S.; Polat, I.; Altunbas, M. [Department of Physics, Karadeniz Technical University, 61080 Trabzon (Turkey); Tuerksoy, M.; Topkaya, R. [Department of Physics, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey); Ozdogan, K. [Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey)

    2011-10-17

    Highlights: {yields} Cadmium sulphide thin films were deposited by vacuum evaporation. {yields} Elemental Mn was deposited onto CdS thin films by using electron beam evaporation and annealed under vacuum at different temperatures. {yields} Structural, optical and magnetic studies of Mn-doped CdS have been investigated. {yields} X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. {yields} Magnetic measurements show that Mn-doped CdS thin films exhibit a ferromagnetism behavior at room temperature. - Abstract: The effect of Mn-doping on the vacuum deposited CdS thin films has been investigated by studying the changes in the structural, optical and magnetic properties of the films. A thin Mn layer evaporated on the CdS film surface served as the source layer for the diffusion doping. Doping was accomplished by annealing the CdS/Mn stack layers at the temperature range from 300 deg. C to 400 deg. C in step of 50 deg. C for 30 min under vacuum. The X-ray diffraction results showed that the undoped CdS film had a zinc-blende structure with a strong preferred orientation along the (1 1 1) direction. The incorporation of Mn did not cause any change in the texture but reduced the peak intensity and lead to a smaller crystallite size. Investigation of surface morphology using atomic force microscopy confirmed the decrease in the grain size with the Mn diffusion. In addition, a more uniform grain size distribution was observed in the doped films. X-ray photoelectron spectroscopy analysis showed that Mn atoms on the surface of the films were bounded to either sulphur or oxygen atoms. Auger electron spectroscopy of the diffusion-doped CdS sample at 350 deg. C indicated that the atomic Mn concentration was higher close to the surface region and Mn was distributed with a steadily decreasing profile through the bulk of the film with an average atomic concentration value around few

  20. Morphologies and wetting properties of copper film with 3D porous micro-nano hierarchical structure prepared by electrochemical deposition

    International Nuclear Information System (INIS)

    Wang, Hongbin; Wang, Ning; Hang, Tao; Li, Ming

    2016-01-01

    Highlights: • A 3D porous micro-nano hierarchical structure Cu films were prepared. • The evolution of morphology and wettability with deposition time was reported. • The effects of EDA on the microscopic morphology were revealed. • A high contact angle of 162.1° was measured when deposition time is 5 s. • The mechanism of super-hydrophobicity was illustrated by two classical models. - Abstract: Three-dimensional porous micro-nano hierarchical structure Cu films were prepared by electrochemical deposition with the Hydrogen bubble dynamic template. The morphologies of the deposited films characterized by Scanning Electronic Microscopy (SEM) exhibit a porous micro-nano hierarchical structure, which consists of three levels in different size scales, namely the honeycomb-like microstructure, the dendritic substructure and the nano particles. Besides, the factors which influenced the microscopic morphology were studied, including the deposition time and the additive Ethylene diamine. By measuring the water contact angle, the porous copper films were found to be super-hydrophobic. The maximum of the contact angles could reach as high as 162.1°. An empirical correlation between morphologies and wetting properties was revealed for the first time. The pore diameter increased simultaneously with the deposition time while the contact angle decreased. The mechanism was illustrated by two classical models. Such super-hydrophobic three-dimensional hierarchical micro-nano structure is expected to have practical application in industry.

  1. Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Birkett, Martin, E-mail: martin.birkett@northumbria.ac.uk; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

    2013-07-01

    The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al{sub 2}O{sub 3} and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance.

  2. Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Birkett, Martin; Penlington, Roger; Wan, Chaoying; Zoppi, Guillaume

    2013-01-01

    The structural and electrical properties of a low resistivity CuAlMo thin film resistor material were investigated. The thin films were grown on Al 2 O 3 and glass substrates by direct current (dc) magnetron sputtering. The key electrical properties of sheet resistance, temperature coefficient of resistance (TCR) and resistance stability were investigated as a function of sputtering pressure and post-deposition heat treatment time and temperature. A low sputtering pressure range of 0.13 to 0.40 Pa produced CuAlMo films with sheet resistance in the range 0.1 to 0.2 Ω/□ and resistance stability of 0.45 to 0.65% with a TCR of − 90 ppm/°C which could be shifted to zero following annealing in air at 425 °C. Films grown at higher sputtering pressures of 0.53 to 0.80 Pa had increased sheet resistance in the range 0.4 to 0.6 Ω/□ and inferior stability of 0.8 to 1.7% with a more negative TCR of − 110 to − 180 ppm/°C which could not be shifted to zero following annealing. The stability of the films grown at 0.13 and 0.40 Pa could be further improved to < 0.25% with heat treatment, due to the formation of a protective aluminium oxide layer. A minimum dwell time of 3 h at 425 °C was required to stabilise the films and set the electrical properties. - Highlights: • Thin films of copper–aluminium–molybdenum were sputtered on alumina substrates. • Film properties were investigated with variation in process conditions. • Low sputtering pressure gave improved electrical performance. • Post deposition annealing in air further improved electrical performance

  3. Structural, optical and electrical properties of ZnO thin films prepared ...

    Indian Academy of Sciences (India)

    Administrator

    of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical pro- perties has ... dependence of photoresponse properties of sprayed ZnO thin films on ... randomly oriented flake-like grains. The grains ...

  4. Structural and electrical properties of Ta2O5 thin films prepared by ...

    Indian Academy of Sciences (India)

    The dielectric constant and leakage current density of the Ta2O5 thin films increase with increasing powers of the UV- lamps. Effects of UV- lamp powers on the structural and electrical properties were discussed. Keywords. Chemical vapour deposition processes; oxides; dielectric material; MOS capacitor. 1. Introduction.

  5. Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Rekha, E-mail: rekha.mittal07@gmail.com; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

    2016-05-06

    Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

  6. Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Bai, Rekha; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

    2016-01-01

    Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

  7. Structural and magnetic properties in Mn-doped ZnO films prepared by pulsed-laser deposition

    International Nuclear Information System (INIS)

    Li, Qiang; Wang, Yuyin; Liu, Jiandang; Kong, Wei; Ye, Bangjiao

    2014-01-01

    We investigated the structural and magnetic properties of Zn 0.95 Mn 0.05 O films prepared on sapphire substrates by pulsed-laser deposition. Only low temperature ferromagnetism (Curie temperature lower than 50 K) was observed in Mn-doped samples, while pure ZnO film shows a typical paramagnetic behavior. Structural analyses indicate that the substitutional Mn 2+ ions play a significant role for the low temperature ferromagnetism. Lattice defects such as V O and V Zn were not proven to be effective factors for the origin of ferromagnetism in the films. The low temperature ferromagnetism might be interpreted as p–d hybridization from indirect coupling of Mn ions (Mn–O–Mn).

  8. Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

    Directory of Open Access Journals (Sweden)

    Sarita Boolchandani

    2018-01-01

    Full Text Available The indium selenium (InSe bilayer thin films of various thickness ratios, InxSe(1-x (x = 0.25, 0.50, 0.75, were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe and aluminum selenide (AlSe bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

  9. Design and Preparation of a Micro-Pyramid Structured Thin Film for Broadband Infrared Antireflection

    Directory of Open Access Journals (Sweden)

    Shaobo Ge

    2018-05-01

    Full Text Available A micro-pyramid structured thin film with a broad-band infrared antireflection property is designed and fabricated by using the single-point diamond turning (SPDT technique and combined with nano-imprint lithography (NIL. A structure with dimensions of 10 μm pitch and 5 μm height is transferred from the copper mold to the silicon nitride optical film by using NIL and proportional inductively-coupled plasma (ICP etching. Reflectance of the micro-optical surface is reduced below 1.0% over the infrared spectral range (800–2500 nm. A finite-difference-time-domain (FDTD analysis indicates that this micro-structure can localize photons and enhance the absorption inside the micro-pyramid at long wavelengths. As described above, the micro-pyramid array has been integrated in an optical film successfully. Distinguishing from the traditional micro-optical components, considering the effect of refraction and diffraction, it is a valuable and flexible method to take account of the interference effect of optical film.

  10. Preparation of biomimetic nano-structured films with multi-scale roughness

    Science.gov (United States)

    Shelemin, A.; Nikitin, D.; Choukourov, A.; Kylián, O.; Kousal, J.; Khalakhan, I.; Melnichuk, I.; Slavínská, D.; Biederman, H.

    2016-06-01

    Biomimetic nano-structured films are valuable materials in various applications. In this study we introduce a fully vacuum-based approach for fabrication of such films. The method combines deposition of nanoparticles (NPs) by gas aggregation source and deposition of overcoat thin film that fixes the nanoparticles on a surface. This leads to the formation of nanorough surfaces which, depending on the chemical nature of the overcoat, may range from superhydrophilic to superhydrophobic. In addition, it is shown that by proper adjustment of the amount of NPs it is possible to tailor adhesive force on superhydrophobic surfaces. Finally, the possibility to produce NPs in a wide range of their size (45-240 nm in this study) makes it possible to produce surfaces not only with single scale roughness, but also with bi-modal or even multi-modal character. Such surfaces were found to be superhydrophobic with negligible water contact angle hysteresis and hence truly slippery.

  11. Preparation of biomimetic nano-structured films with multi-scale roughness

    International Nuclear Information System (INIS)

    Shelemin, A; Nikitin, D; Choukourov, A; Kylián, O; Kousal, J; Khalakhan, I; Melnichuk, I; Slavínská, D; Biederman, H

    2016-01-01

    Biomimetic nano-structured films are valuable materials in various applications. In this study we introduce a fully vacuum-based approach for fabrication of such films. The method combines deposition of nanoparticles (NPs) by gas aggregation source and deposition of overcoat thin film that fixes the nanoparticles on a surface. This leads to the formation of nanorough surfaces which, depending on the chemical nature of the overcoat, may range from superhydrophilic to superhydrophobic. In addition, it is shown that by proper adjustment of the amount of NPs it is possible to tailor adhesive force on superhydrophobic surfaces. Finally, the possibility to produce NPs in a wide range of their size (45–240 nm in this study) makes it possible to produce surfaces not only with single scale roughness, but also with bi-modal or even multi-modal character. Such surfaces were found to be superhydrophobic with negligible water contact angle hysteresis and hence truly slippery. (paper)

  12. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

    2013-10-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

  13. Structural, optical and electrical properties of CuInS{sub 2} thin films prepared by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Terasako, Tomoaki; Uno, Yuji; Inoue, Seiki; Shirakata, Sho [Faculty of Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama 780-8577 (Japan); Kariya, Tetsuya [Faculty of Science, Kochi University, Akebono-cho, Kochi, 780-8072 (Japan)

    2006-09-15

    Polycrystalline CuInS{sub 2} thin films were prepared by chemical spray pyrolisis (CSP) on glass substrate from the ethanol aqueous solution containing CuCl{sub 2}, InCl{sub 3} and thiourea. Structural, electrical and optical properties were systematically studied in terms of substrate temperature, pH and the ion ratio (Cu/In) of the spray solution. Although the In-rich films were composed of CuInS{sub 2} and In{sub 2}S{sub 3}, the In{sub 2}S{sub 3} content in the film decreased with Cu/In ratio. Appearance of Raman peaks at 288 and 298 cm{sup -1} indicated that the films contained CuInS{sub 2} with chalcopyrite and CuAu phases. Typical grain size in the Cu-rich films was 200 nm. Optical gap energies were approximately 0.1-0.2eV smaller than the bandgap energy of the CuInS{sub 2} bulk crystal. Resistivity of the Cu-rich films without In{sub 2}S{sub 3} secondary phase was 0.2-5 {omega}cm. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

    International Nuclear Information System (INIS)

    Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    FeCo epitaxial films were prepared on MgO(111), SrTiO 3 (111), and Al 2 O 3 (0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110) bcc films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO 3 and Al 2 O 3 substrates include FeCo(111) bcc crystal in addition to the FeCo(110) bcc crystals with NW and KS relationships. The FeCo(111) bcc crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110) bcc and FeCo(111) bcc crystals formed on the insulating substrates are in agreement with those of the bulk Fe 50 Co 50 (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

  15. Structural and optical studied of nano structured lead sulfide thin films prepared by the chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Al Din, Nasser Saad, E-mail: nsaadaldin@yahoo.com; Hussain, Nabiha, E-mail: nabihahssin@yahoo.com [Damascus University Faculty of Science, Department of physics, Homs (Syrian Arab Republic); Jandow, Nidhal, E-mail: nidhaljandow@yahoo.com [Al –Mustansiriyah University, College of Education, Department of physics, Baghdad (Iraq)

    2016-07-25

    Lead (II) Sulfide PbS thin films were deposited on glass substrates at 25°C by chemical bath deposition (CBD) method. The structural properties of the films were studied as a function of the concentration of Thiourea (CS (NH{sub 2}){sub 2}) as Source of Sulfide and deposition time. The surface morphology of the films was characterized by X-ray diffraction and SEM. The obtained results showed that the as-deposited films Polycrystalline had cubic crystalline phase that belong to S.G: Fm3m. We found that they have preferred orientation [200]. Also the thickness of thin films decrease with deposition time after certain value and, it observed free sulfide had orthorhombic phase. Optical properties showed that the thin films have high transmission at visible range and low transmission at UV, IR range. The films of PbS have direct band gap (I.68 - 2.32 ev) at 300 K the values of band energy decreases with increases thickness of the Lead (II) Sulfide films.

  16. Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

    1998-11-27

    Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

  17. Structural and optical characteristics of nano-sized structure of Zn0.5Cd0.5S thin films prepared by dip-coating method

    International Nuclear Information System (INIS)

    Rafea, M. Abdel; Farag, A.A.M.; Roushdy, N.

    2009-01-01

    In this work, a stoichiometry Zn 0.5 Cd 0.5 S nano-structured powder was synthesized. Thin films of different thicknesses of Zn 0.5 Cd 0.5 S were prepared by dip-coating method onto glass substrates. The X-ray diffraction analysis of the prepared powder and films were performed to investigate the crystalline structure. Some structural parameters such as the mean crystallite size and the internal lattice strain were calculated. The composition analysis was made by the energy dispersive X-ray technique, EDX. Scanning electron micrographs, SEM showed that the prepared films are nearly homogeneous and consists of nearly parallel surfaces and the thickness was determined by the cross section imaging. The transmission spectra, T(λ), of the films at normal incidence of light were obtained in the spectral region 190-1100 nm. The optical constants of Zn 0.5 Cd 0.5 S films were determined using the interference maxima and minima of the transmission spectrum. The dispersion of refractive index was discussed in terms of the single-oscillator model and the important oscillating parameters were determined. The dependence of absorption coefficient on the photon energy was determined and the analysis of the result showed that the optical transition in Zn 0.5 Cd 0.5 S is allowed and indirect. The thickness dependence of the obtained optical parameters was also considered.

  18. Structural and mechanical properties of ZrSiN thin films prepared by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Freitas, F.G.R.; Conceicao, A.G.S.; Vitoria, E.R.; Carvalho, R.G.; Tentardini, E.K.; Hübler, R.; Soares, G.

    2014-01-01

    Zirconium silicon nitride (ZrSiN) thin films were deposited by reactive magnetron sputtering in order to verify the silicon influence on coating morphology and mechanical properties. The Si/(Zr+Si) ratio was adjusted between 0 to 14.5% just modifying the power applied on the silicon target. Only peaks associated to ZrN crystalline structure were observed in XRD analysis, since Si_3N_4 phase was amorphous. All samples have (111) preferred orientation, but there is a peak intensity reduction and a broadening increase for the sample with the highest Si/(Zr+Si) ratio (14.5%), demonstrating a considerable loss of crystallinity or grain size reduction (about 8 nm calculated by Scherrer). It was also observed that the texture coefficient for (200) increases with silicon addition. Chemical composition and thickness of the coatings were determined by RBS analysis. No significant changes in nano hardness with increasing Si content were found. The thin film morphology observed by SEM presents columnar and non columnar characteristics. The set of results suggests that Si addition is restricting the columnar growth of ZrN thin films. This conclusion is justified by the fact that Si contributes to increase the ZrN grains nucleation during the sputtering process. (author)

  19. Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Miyata, Toshihiro; Uozaki, Ryousuke; Sai, Hitoshi; Koida, Takashi

    2016-01-01

    Surface-textured Al-doped ZnO (AZO) films formed using two new techniques based on magnetron sputtering deposition were developed by optimizing the light scattering properties to be suitable for transparent electrode applications in thin-film silicon solar cells. Scrambled egg-like surface-textured AZO films were prepared using a new texture formation technique that post-etched pyramidal surface-textured AZO films prepared under deposition conditions suppressing c-axis orientation. In addition, double surface-textured AZO films were prepared using another new texture formation technique that completely removed, by post-etching, the pyramidal surface-textured AZO films previously prepared onto the initially deposited low resistivity AZO films; simultaneously, the surface of the low resistivity films was slightly etched. However, the obtained very high haze value in the range from the near ultraviolet to visible light in the scrambled egg-like surface-textured AZO films did not contribute significantly to the obtainable photovoltaic properties in the solar cells fabricated using the films. Significant light scattering properties as well as a low sheet resistance could be achieved in the double surface-textured AZO films. In addition, a significant improvement of external quantum efficiency in the range from the near ultraviolet to visible light was achieved in superstrate-type n-i-p μc-Si:H solar cells fabricated using a double surface-textured AZO film prepared under optimized conditions as the transparent electrode. - Highlights: • Double surface-textured AZO films prepared using a new texture formation technique • Extensive light scattering properties with low sheet resistance achieved in the double surface-textured AZO films • Improved external quantum efficiency of μc-Si:H solar cells using a double surface-textured AZO film

  20. Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Miyata, Toshihiro, E-mail: tmiyata@neptune.kanazawa-it.ac.jp [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Uozaki, Ryousuke [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Sai, Hitoshi; Koida, Takashi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2016-09-01

    Surface-textured Al-doped ZnO (AZO) films formed using two new techniques based on magnetron sputtering deposition were developed by optimizing the light scattering properties to be suitable for transparent electrode applications in thin-film silicon solar cells. Scrambled egg-like surface-textured AZO films were prepared using a new texture formation technique that post-etched pyramidal surface-textured AZO films prepared under deposition conditions suppressing c-axis orientation. In addition, double surface-textured AZO films were prepared using another new texture formation technique that completely removed, by post-etching, the pyramidal surface-textured AZO films previously prepared onto the initially deposited low resistivity AZO films; simultaneously, the surface of the low resistivity films was slightly etched. However, the obtained very high haze value in the range from the near ultraviolet to visible light in the scrambled egg-like surface-textured AZO films did not contribute significantly to the obtainable photovoltaic properties in the solar cells fabricated using the films. Significant light scattering properties as well as a low sheet resistance could be achieved in the double surface-textured AZO films. In addition, a significant improvement of external quantum efficiency in the range from the near ultraviolet to visible light was achieved in superstrate-type n-i-p μc-Si:H solar cells fabricated using a double surface-textured AZO film prepared under optimized conditions as the transparent electrode. - Highlights: • Double surface-textured AZO films prepared using a new texture formation technique • Extensive light scattering properties with low sheet resistance achieved in the double surface-textured AZO films • Improved external quantum efficiency of μc-Si:H solar cells using a double surface-textured AZO film.

  1. Crystal Structure And Optical Properties Of TiO2 Thin Films Prepared By Reactive RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Goto S.

    2015-06-01

    Full Text Available In sputtering deposition process of TiO2, metal Ti or sintered TiO2 target is used as deposition source. In this study, we have compared the characteristic of target materials. When TiO2 target was used, stoichiometric TiO2 films was deposited under the Ar atmosphere containing 1.0% of oxygen. The highest sputtering rate under this atmosphere was 3.9nm/min at 3.4W/cm2. But, sintered TiO2 target is fragile and cannot endure higher density of input power than 3.4W/cm2. On the other hand, Ti target needs higher oxygen concentration (8% in sputtering gas atmosphere for obtaining rutile/anatase. Even though Ti target can be input twice power density of 7.9W/cm2, the highest deposition rate for Ti target was 1.4/nm, which was ~35% of the highest rate for TiO2 target. Then we have study out the composite target consisting of Ti plate and TiO2 chips. Using the composite target, stoichiometric TiO2 films were prepared in the rate of 9.6nm/min at 6.8 W/cm2 under the atmosphere of Ar/2.5%O2. Furthermore, we have found that the TiO2 films obtained from the composite target consisted of about 100% anatase, whereas TiO2 films obtained from other target have rutile dominant structure. The optical band gap energy of the film is determined by using the Tauc plot. The calculated band gap energies for the films deposited by Ti target and composite target were 2.95 and 3.24eV, which are equivalent to that of rutile and anatase structure, respectively.

  2. Structural, optical and magnetic properties of Mn doped ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Aravind, Arun, E-mail: aruncusat@gmail.com [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Jayaraj, M.K., E-mail: mkj@cusat.ac.in [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022, Kerala (India); Kumar, Mukesh; Chandra, Ramesh [Nano Science Laboratory, Institute Instrumentation Centre, IIT Roorkee, Roorkee 247 667, Uttarakhand (India)

    2012-08-01

    Highlights: Black-Right-Pointing-Pointer Defect induced Raman active modes in Mn doped ZnO thin films. Black-Right-Pointing-Pointer Room temperature ferromagnetism. Black-Right-Pointing-Pointer Morphological variations of ZnO thin films with Mn doping. Black-Right-Pointing-Pointer Variation of refractive index of ZnO thin films with Mn doping. - Abstract: Zn{sub 1-x}Mn{sub x}O thin films were grown by pulsed laser deposition. The phase purity and the structure were confirmed by X-ray diffraction studies. The films have a transmittance more than 80% in the visible region. The refractive index of Zn{sub 0.90}Mn{sub 0.10}O films is found to be 1.77 at 550 nm. The presence of non-polar E{sub 2}{sup high} and E{sub 2}{sup low} Raman modes in thin films indicates that 'Mn' doping does not change the wurtzite structure of ZnO. Apart from the normal modes of ZnO the Zn{sub 1-x}Mn{sub x}O ceramic targets show two additional modes at 332 cm{sup -1} (I{sub 1}) and 524 cm{sup -1} (I{sub 2}). The broad Raman peaks (340-600 cm{sup -1}) observed Zn{sub 0.90}Mn{sub 0.10}O thin films can be deconvoluted into five peaks, denoted as P{sub 1}-P{sub 5}. The possible origins of Raman peaks in Zn{sub 1-x}Mn{sub x}O films are the structural disorder and morphological change caused by the Mn dopant. The B{sub 1}{sup low}, {sup 2}B{sub 1}{sup low}, B{sub 1}{sup high} and A{sub 1}{sup LO} modes as well as the surface phonon mode have been observed in heavily Mn-doped ZnO films. Zn{sub 0.98}Mn{sub 0.02}O thin film shows room temperature ferromagnetism. The saturation magnetic moment of the Zn{sub 0.98}Mn{sub 0.02}O thin film is 0.42{mu}{sub B}/Mn atom. The undoped ZnO film prepared under the same condition shows diamagnetic nature. At higher doping concentrations the formation of Mn clusters suppress the room temperature ferromagnetism in Zn{sub 1-x}Mn{sub x}O thin films and shows paramagnetism. XPS confirms the incorporation of Mn{sup 2+} into the ZnO lattice.

  3. Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Polyakov, A.Y.; Smirnov, N.B.; Yakimov, E.B.; Usikov, A.S.; Helava, H.; Shcherbachev, K.D.; Govorkov, A.V.; Makarov, Yu N.; Lee, In-Hwan

    2014-01-01

    Highlights: • GaN films are prepared by hydride vapor phase epitaxy (HVPE). • Residual donors and deep traps show a minimum density versus growth temperature. • This minimum is located close to the HVPE growth temperature of 950 °C. • Good crystalline GaN with residual donor density < 10 16 cm −3 can be grown at 950 °C. - Abstract: Two sets of undoped GaN films with the thickness of 10–20 μm were prepared by hydride vapor phase epitaxy (HVPE) and characterized by capacitance–voltage (C–V) profiling, microcathodoluminescence (MCL) spectra measurements, MCL imaging, electron beam induced current (EBIC) imaging, EBIC dependence on accelerating voltage, deep levels transient spectroscopy, high resolution X-ray diffraction measurements. The difference in growth conditions was mainly related to the lower (850 °C, group 1) or higher (950 °C, group 2) growth temperature. Both groups of samples showed similar crystalline quality with the dislocation density close to 10 8 cm −2 , but very different electrical and optical properties. In group 1 samples the residual donors concentration was ∼10 17 cm −3 or higher, the MCL spectra were dominated by the band-edge luminescence, and the diffusion length of charge carriers was close to 0.1 μm. Group 2 samples had a 2–4.5 μm thick highly resistive layer on top, for which MCL spectra were determined by green, yellow and red defect bands, and the diffusion length was 1.5 times higher than in group 1. We also present brief results of growth at the “standard” HVPE growth temperature of 1050 °C that show the presence of a minimum in the net donor concentration and deep traps density as a function of the growth temperature. Possible reasons for the observed results are discussed in terms of the electrical compensation of residual donors by deep traps

  4. Solar cells, structures including organometallic halide perovskite monocrystalline films, and methods of preparation thereof

    KAUST Repository

    Bakr, Osman; Peng, Wei; Wang, Lingfei

    2017-01-01

    Embodiments of the present disclosure provide for solar cells including an organometallic halide perovskite monocrystalline film (see fig. 1.1B), other devices including the organometallic halide perovskite monocrystalline film, methods of making

  5. Solar cells, structures including organometallic halide perovskite monocrystalline films, and methods of preparation thereof

    KAUST Repository

    Bakr, Osman M.

    2017-03-02

    Embodiments of the present disclosure provide for solar cells including an organometallic halide perovskite monocrystalline film (see fig. 1.1B), other devices including the organometallic halide perovskite monocrystalline film, methods of making organometallic halide perovskite monocrystalline film, and the like.

  6. Influences of ambient gases on the structure and the composition of calcium phosphate films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, Hye-Lee; Kim, Young-Sun; Kim, Dae-Joon; Lee, Won-Jun; Han, Jung-Suk

    2006-01-01

    Calcium phosphate films were prepared by using a pulsed KrF-laser deposition (PLD) method with a hydroxyapatite target in various ambient gases, such as Ar, O 2 and H 2 O. The influence of the ambient gas on the properties of the deposited films was investigated. The chamber pressure and the substrate temperature were fixed at 0.25 Torr and 600 .deg. C, respectively. Calcium-rich amorphous calcium phosphate films were deposited with a low density in Ar due to the preferential resputtering of phosphorus from the growing film. In an O 2 ambient, the density and the Ca/P ratio of the films were similar to those of the target. However, the deposited film was amorphous calcium phosphate and did not contain OH - groups. Polycrystalline hydroxyapatite films can be deposited in a H 2 O ambient because a sufficient supply of OH - groups from the ambient gas is essential for the growth of a hydroxyapatite film.

  7. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    Blanc, R.; Chedin, P.; Gizon, A.

    1965-01-01

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm 2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation [fr

  8. Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

    2018-06-01

    Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

  9. Structural, optical and thermal properties of {beta}-SnS{sub 2} thin films prepared by the spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Khelia, C.; Ben Nasrallah, T.; Amlouk, M.; Belgacem, S. [Faculte des Sciences, Tunis (Tunisia). Lab. de Physique de la Matiere Condensee; Maiz, F. [Equipe de Photothermique de Nabeul, Inst. Preparatoire aux Etudes d' Ingenieur de Nabeul (Tunisia); Mnari, M. [Lab. de Chimie Analytique, Campus Univ., Tunis (Tunisia)

    2000-03-01

    Tin disulfide {beta}-SnS{sub 2} thin films have been prepared on pyrex substrates by the spray pyrolysis technique using tin tetrachloride and thiourea as starting materials. The depositions were carried out in the range of substrate temperatures from 240 to 400 C. Highly c-axis oriented {beta}-SnS{sub 2} films, having a strong (001) X-ray diffraction line are obtained at temperature 280 C and using concentration ratio in solution R = [S]/[Sn] = 2.5. Films surfaces were analyzed by contact atomic force microscopy (AFM) and by scanning electron microscopy (SEM) in order to understand the effect of the deposited temperature on the surface structure. On the other hand, from transmission and reflection spectra, the band gap energy determined is about 2.71 eV. Finally using the photodeflection spectroscopy technique, the thermal conductivity K{sub c} and diffusivity D{sub c} were obtained. Their values are 10 Wm{sup -1}K{sup -1} and 10{sup -5} m{sup 2}s{sup -1} respectively. (orig.)

  10. Two Ti13-oxo-clusters showing non-compact structures, film electrode preparation and photocurrent properties.

    Science.gov (United States)

    Hou, Jin-Le; Luo, Wen; Wu, Yin-Yin; Su, Hu-Chao; Zhang, Guang-Lin; Zhu, Qin-Yu; Dai, Jie

    2015-12-14

    Two benzene dicarboxylate (BDC) and salicylate (SAL) substituted titanium-oxo-clusters, Ti13O10(o-BDC)4(SAL)4(O(i)Pr)16 (1) and Ti13O10(o-BDC)4(SAL-Cl)4(O(i)Pr)16 (2), are prepared by one step in situ solvothermal synthesis. Single crystal analysis shows that the two Ti13 clusters take a paddle arrangement with an S4 symmetry. The non-compact (non-sphere) structure is stabilized by the coordination of BDC and SAL. Film photoelectrodes are prepared by the wet coating process using the solution of the clusters and the photocurrent response properties of the electrodes are studied. It is found that the photocurrent density and photoresponsiveness of the electrodes are related to the number of coating layers and the annealing temperature. Using ligand coordinated titanium-oxo-clusters as the molecular precursors of TiO2 anatase films is found to be effective due to their high solubility, appropriate stability in solution and hence the easy controllability.

  11. Magnetic and structural properties of NdFeB thin film prepared by step annealing

    International Nuclear Information System (INIS)

    Serrona, Leo K.E.B.; Sugimura, A.; Fujisaki, R.; Okuda, T.; Adachi, N.; Ohsato, H.; Sakamoto, I.; Nakanishi, A.; Motokawa, M.

    2003-01-01

    The crystallization of the amorphous phase into the tetragonal Nd 2 Fe 14 B (PHI) phase and the corresponding changes in magnetic properties have been examined by step annealing experiment using a 2 μm thick NdFeB film sample. Microstructural and magnetic analysis indicate that the film was magnetically soft as deposited with the coercivity H ciperp -1 and the remnant magnetization 4πM rperp -1 was developed and diffraction analysis showed evidence of PHI phase 002l peaks being aligned perpendicular to the film plane. At an optimum annealing temperature of 575 deg. C, the remnant magnetization of this anisotropic thin film is around 0.60 T with intrinsic coercivity of ∼1340 kA m -1 . Annealing the film sample at 200 deg. C≤T ann ≤750 deg. C showed variations in magnetic properties that were mostly due to the change in the perpendicular anisotropy. Based on 4πM sperpendicular values plotted against T ann , a dip in 4πM sperpendicular values was observed as T ann increased in the soft-to-hard magnetic characteristics transition region and rose as the hard crystalline phase started to form. The results show that the magnetic properties of the NdFeB film were slightly influenced by the presence of NdO, film surface roughening and the small increase in crystal size as a consequence of repeated heat treatment. At T ann ∼300 deg. C, the nominal saturation magnetization indicated a certain degree of weak perpendicular magnetic anisotropy in the film sample considered to be essential in the enhancement of coercivity in crystallized films

  12. Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Barhdadi, A.

    2001-08-01

    In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

  13. Structural and optical properties of Ni-doped CdS thin films prepared by chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Premarani, R. [Arumugam Pillai SeethaiAmmal College, Thiruppattur-630211 (India); Saravanakumar, S., E-mail: sarophy84@gmail.com; Chandramohan, R. [SreeSevuganAnnamalai College, Devakottai-630303 (India); Mahalingam, T. [Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749 (Korea, Republic of)

    2015-06-24

    The structural and optical behavior of undoped Cadmiun Sulphide (CdS) and Ni-doped CdS thinfilms prepared by Chemical Bath Deposition (CBD) technique is reported. The crystallite sizes of the thinfilms have been characterized by X-ray diffraction pattern (XRD). The particle sizes increase with the increase of Ni content in the CdS thinfilms. Scanning Electron Microscope (SEM) results indicated that CdS thinfilms is made up of aggregate of spherical-like particles. The composition was estimated by Energy Dispersive Analysis of X-ray (EDX) and reported. Spectroscopic studies revealed considerable improvement in transmission and the band gap of the films changes with addition of Ni dopant that is associated with variation in crystallite sizes in the nano regime.

  14. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  15. Magnetostrictive thin films prepared by RF sputtering

    International Nuclear Information System (INIS)

    Carabias, I.; Martinez, A.; Garcia, M.A.; Pina, E.; Gonzalez, J.M.; Hernando, A.; Crespo, P.

    2005-01-01

    Fe 80 B 20 thin films have been prepared by ion beam sputtering magnetron on room temperature. The films were fabricated on different substrates to compare the different magnetic and structural properties. In particular the growth of films on flexible substrates (PDMS, Kapton) has been studied to allow a simple integration of the system in miniaturized magnetostrictive devices. X-ray diffraction patterns indicate that films are mainly amorphous although the presence of some Fe nanoparticles cannot be ruled out. The coercive field of thin films ranges between 15 and 35 Oe, depending on substrate. Magnetostriction measurements indicate the strong dependence of the saturation magnetostriction with the substrate. Samples on flexible substrates exhibit a better performance than samples deposited onto glass substrates

  16. Influences of ambient gases on the structure and the composition of calcium phosphate films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hye-Lee; Kim, Young-Sun; Kim, Dae-Joon; Lee, Won-Jun [Sejong University, Seoul (Korea, Republic of); Han, Jung-Suk [Seoul National University, Seoul (Korea, Republic of)

    2006-11-15

    Calcium phosphate films were prepared by using a pulsed KrF-laser deposition (PLD) method with a hydroxyapatite target in various ambient gases, such as Ar, O{sub 2} and H{sub 2}O. The influence of the ambient gas on the properties of the deposited films was investigated. The chamber pressure and the substrate temperature were fixed at 0.25 Torr and 600 .deg. C, respectively. Calcium-rich amorphous calcium phosphate films were deposited with a low density in Ar due to the preferential resputtering of phosphorus from the growing film. In an O{sub 2} ambient, the density and the Ca/P ratio of the films were similar to those of the target. However, the deposited film was amorphous calcium phosphate and did not contain OH{sup -} groups. Polycrystalline hydroxyapatite films can be deposited in a H{sub 2}O ambient because a sufficient supply of OH{sup -} groups from the ambient gas is essential for the growth of a hydroxyapatite film.

  17. The effect of Ce doping on the structure, surface morphology and magnetic properties of Dy doped-yttrium iron garnet films prepared by a sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Arsad, A.Z.; Ibrahim, N.B., E-mail: baayah@ukm.edu.my

    2016-07-15

    Cerium substitute Y{sub 2.8−x}Dy{sub 0.2}Ce{sub x}Fe{sub 5}O{sub 12} (x=0, 0.2, 0.25, 0.3, 0.35) films have been prepared on quartz substrates by a simple sol–gel method and followed by a spin-coating technique. The crystalline structures, surface and magnetic properties of the films has been investigated by an X-ray diffractometer (XRD), a field emission scanning electron microscope (FESEM), an atomic force microscope (AFM) and a vibrating sample magnetometer (VSM). The XRD analysis revealed that the films have garnet structure. The lattice parameter increased as Ce content was increased up to 0.25 due to the Ce{sup 3+} ions completely substituted for Y{sup 3+} ions. For films x≥0.3, the lattice parameter decreased. The FESEM results showed that the average grains were small, ranging from 11 to 14 nm and the thickness of films increased with the increment of Ce contents. VSM results for both in and out-plane magnetic measurement showed the film with x=0 has the highest saturation magnetization (M{sub s}) values. With the increment of Ce contents, the M{sub s} of films decreased due to the substitution of Ce{sup 3+}, Dy{sup 3+} ions in the c-site. For films x≥0.3 the reduction of M{sub s} values was due to the presence of CeO{sub 2} in the film. The films with x=0–0.25 exhibited increases in H{sub c} values. The improvement of coercivity value, small grain size and high crystalline structure of film with x=0.25 has a potential to be used in magneto optical (MO) memory storage applications. - Highlights: • Ce-doped Y{sub 2.8−x}Dy{sub 0.2}Ce{sub x}Fe{sub 5}O{sub 12} films were prepared by the sol–gel method. • The solubility limit of Ce{sup 3+} ions in the film was x=0.25. • The average grain size ranging from 11 to 14 nm with the increment of Ce doping. • Increasing Ce contents degrades the saturation of magnetization of films. • Increasing Ce contents improve the coercivity of films.

  18. Preparation and structure characterization of SmCo5(0001) epitaxial thin films grown on Cu(111) underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-01-01

    SmCo 5 (0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al 2 O 3 (0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo 5 crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo 5 epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo 5 (0001) single-crystal thin film is successfully obtained. Nucleation of SmCo 5 crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo 5 layer

  19. Preparation of micro/nano-structure superhydrophobic film on aluminum plates using galvanic corrosion method.

    Science.gov (United States)

    Wu, Ruomei; Chao, Guang Hua; Jiang, Haiyun; Pan, Anqiang; Chen, Hong; Yuan, Zhiqing; Liu, Qilong

    2013-10-01

    A simple and novel approach has been developed to obtain a microporous film with compound nanoparticles on the surface of aluminum alloy substrate using the galvanic corrosion method. The wettability of the surface changes from hydrophilicity to superhydrophobicity after chemical modification with stearic acid (SA). The water contact angle (WCA) and sliding angle (WSA) of superhydrophobic aluminum alloy surface (SAAS) are 154 degrees and 9 degrees, respectively. The roughness of the aluminum substrate increases after the oxidation reaction. The porous aluminum matrix surface is covered with irregularly shaped holes with a mean radius of about 15 microm, similar to the surface papillae of natural Lotus leaf, with villus-like nanoparticles array on pore surfaces. The superhydrophobic property is attributed to this special surface morphology and low surface energy SA. X-ray powder diffraction (XRD) pattern and Energy Dispersive X-Ray Spectroscopy (EDS) spectrum indicate that Al2O3, Al(OH)3 and AIO(OH) has been formed on the surface of aluminum substrate after the oxidation reaction. The Raman spectra indicate that C-H bond from SA and the Al-O are formed on the SAAS. The as-formed SAAS has good stability.

  20. Evaluation of the structural, optical and electrical properties of AZO thin films prepared by chemical bath deposition for optoelectronics

    Science.gov (United States)

    Kumar, K. Deva Arun; Valanarasu, S.; Rosario, S. Rex; Ganesh, V.; Shkir, Mohd.; Sreelatha, C. J.; AlFaify, S.

    2018-04-01

    Aluminum doped zinc oxide (AZO) thin films for electrode applications were deposited on glass substrates using chemical bath deposition (CBD) method. The influence of deposition time on the structural, morphological, and opto-electrical properties of AZO films were investigated. Structural studies confirmed that all the deposited films were hexagonal wurtzite structure with polycrystalline nature and exhibited (002) preferential orientation. There is no other impurity phases were detected for different deposition time. Surface morphological images shows the spherically shaped grains are uniformly arranged on to the entire film surface. The EDS spectrum confirms the presence of Zn, O and Al elements in deposited AZO film. The observed optical transmittance is high (87%) in the visible region, and the calculated band gap value is 3.27 eV. In this study, the transmittance value is decreased with increasing deposition time. The room temperature PL spectrum exposed that AZO thin film deposited at (60 min) has good optical quality with less defect density. The minimum electrical resistivity and maximum carrier concentration values were observed as 8.53 × 10-3(Ω cm) and 3.53 × 1018 cm-3 for 60 min deposited film, respectively. The obtained figure of merit (ϕ) value 3.05 × 10-3(Ω/sq)- 1 is suggested for an optoelectronic device.

  1. Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Rafia Barir

    2017-01-01

    Full Text Available Undoped nickel oxide (NiO thin films were deposited on 500°C heated glass substrates using spray pyrolysis method at (0.015–0.1 M range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD shows the formation of NiO under cubic structure with single diffraction peak along (111 plane at 2θ=37.24°. When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.

  2. Structural and Luminescence Properties of Lu2O3:Eu3+ F127 Tri-Block Copolymer Modified Thin Films Prepared by Sol-Gel Method

    Science.gov (United States)

    de Jesus Morales Ramírez, Angel; Hernández, Margarita García; Murillo, Antonieta García; de Jesús Carrillo Romo, Felipe; Palmerin, Joel Moreno; Velazquez, Dulce Yolotzin Medina; Jota, María Luz Carrera

    2013-01-01

    Lu2O3:Eu3+ transparent, high density, and optical quality thin films were prepared using the sol-gel dip-coating technique, starting with lutetium and europium nitrates as precursors and followed by hydrolysis in an ethanol-ethylene glycol solution. Acetic acid and acetylacetonate were incorporated in order to adjust pH and as a sol stabilizer. In order to increment the thickness of the films and orient the structure, F127 Pluronic acid was incorporated during the sol formation. Structural, morphological, and optical properties of the films were investigated for different F127/Lu molar ratios (0–5) in order to obtain high optical quality films with enhanced thickness compared with the traditional method. X-ray diffraction (XRD) shows that the films present a highly oriented cubic structure beyond 1073 K for a 3-layer film, on silica glass substrates. The thickness, density, porosity, and refractive index evolution of the films were investigated by means of m-lines microscopy along with the morphology by scanning electron microscope (SEM) and luminescent properties. PMID:28809336

  3. Structural, morphological, wettability and thermal resistance properties of hydro-oleophobic thin films prepared by a wet chemical process

    International Nuclear Information System (INIS)

    Phani, A.R.

    2006-01-01

    The structural properties of fluorine containing polymer compounds make them highly attractive materials for hydro-oleophobic applications. However, most of these exhibit low surface energy and poor adhesion on the substrates. In the present investigation, crack free, smooth and uniform thin films of poly[4,5-difluoro-2,2-bis(trifluoromethyl)-1,3-dioxole] -co-tetrafluoroethylene (TFD-co-TFE) with good adhesion have been deposited by wet chemical spin-coating technique on polished AISI 440C steel substrates. The as-deposited films (xerogel films) have been subjected to annealing for 1 h at different temperatures ranging from 100 to 500 deg. C in an argon atmosphere. The size growth of the nano-hemispheres increased from 8 nm for xerogel film to 28 nm for film annealed at 400 deg. C. It was found that as the annealing temperature increased from 100 to 400 deg. C, nano-hemisphere-like structures were formed, which in turn have shown increase in the water contact angle from 122 deg. to 147 deg. and oil (peanut) contact angle from 85 deg. to 96 deg. No change in the water contact angle (122 deg.) has been observed when the films deposited at room temperature were heated in air from 30 to 80 deg. C as well as exposed to steam for 8 days for 8 h/day indicating thermal stability of the film

  4. Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

    2011-01-01

    Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni 0.5 Zn 0.5 Fe 2 O 4 . The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 μm, a saturation magnetization of 150 emu/cm 3 , and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

  5. Structural, Morphological, and LPG Sensing Properties of Al-Doped ZnO Thin Film Prepared by SILAR

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2013-01-01

    Full Text Available Undoped and aluminum doped zinc oxide (AZO thin films were deposited on glass substrates by successive ion layer adsorption and reaction (SILAR technique from ammonium zincate complex. The thin films are characterized by X-ray diffraction (XRD and scanning electron microscopy (SEM for their structural and morphological studies. Both undoped and Al-doped film show strong preferred c-axis orientation. The texture coefficient (TC of the film along (002 direction increases due to Al incorporation. SEM micrograph shows round shaped particles for pure ZnO. However AZO films show particles with off spherical shape and compact interconnected grains. Sensitivity of the film in presence of 80% LEL (lower explosive limit of LPG increases with temperature and is maximum at 325°C. Significantly high sensitivity of 87% with reasonably fast response was observed for 1% Al-doped ZnO (AZO film in presence of 1.6 vol% LPG at 325°C.

  6. Studies on the structural and electrical properties of F-doped SnO{sub 2} film prepared by APCVD

    Energy Technology Data Exchange (ETDEWEB)

    Yang Jingkai; Liu Wenchang; Dong Lizhong; Li Yuanxun; Li Chuan [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Zhao Hongli, E-mail: zhaohongli@ysu.edu.cn [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China)

    2011-10-01

    Fluorine-doped tin oxide films (SnO{sub 2}:F, FTO) were deposited by atmosphere pressure chemical vapor deposition (APCVD) on Na-Ca-Si glass coated with a diffusion barrier layer of SiO{sub x}C{sub y}. The effects of post-heating time at 700 deg. C on the structural and electrical properties of SnO{sub 2}:F films were investigated. The results showed that SnO{sub 2}:F films were polycrystalline with tetragonal SnO{sub 2} structure, SnO phase was present in SnO{sub 2} film, and abnormal grain growth was observed. The element distribution in the film depth was measured with X-ray photoelectron spectroscopy (XPS) and revealed that when the heating time increased from 202 s to 262 s, the oxygen content in the surface increased from 78.63% to 83.38%. The resistivity increased from 3.13 x 10{sup -4} for as-deposited films to 4.73 x 10{sup -4} {Omega} cm when post-heated for 262 s. Hall mobility is limited by the ionized impurity scattering rather than the grain boundary scattering.

  7. Oromucosal film preparations: classification and characterization methods.

    Science.gov (United States)

    Preis, Maren; Woertz, Christina; Kleinebudde, Peter; Breitkreutz, Jörg

    2013-09-01

    Recently, the regulatory authorities have enlarged the variety of 'oromucosal preparations' by buccal films and orodispersible films. Various film preparations have entered the market and pharmacopoeias. Due to the novelty of the official monographs, no standardized characterization methods and quality specifications are included. This review reports the methods of choice to characterize oromucosal film preparations with respect to biorelevant characterization and quality control. Commonly used dissolution tests for other dosage forms are not transferable for films in all cases. Alternatives and guidance on decision, which methods are favorable for film preparations are discussed. Furthermore, issues about requirements for film dosage forms are reflected. Oromucosal film preparations offer a wide spectrum of opportunities. There are a lot of suggestions in the literature on how to control the quality of these innovative products, but no standardized tests are available. Regulatory authorities need to define the standards and quality requirements more precisely.

  8. Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Jinlong Jiang

    2014-01-01

    Full Text Available The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3 carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2 ratio of the films.

  9. The effect of O2 partial pressure on the structure and photocatalytic property of TiO2 films prepared by sputtering

    International Nuclear Information System (INIS)

    Liu Baoshun; Zhao Xiujian; Zhao Qingnan; Li Chunling; He Xin

    2005-01-01

    The TiO 2 films were prepared on slide substrates by dc reactive magnetron sputtering at different oxygen partial pressure, and were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Fourier transform infrared spectrometry (FT-IR). The degradation of methyl orange aqueous solutions was used to evaluate the photocatalytic activity. The results show that all films show crystalline anatase structure irrespective of oxygen partial pressure. The surface oxygen element exists in three forms, the first one is TiO 2 , the second one is OH - and the last one is physical absorbed water. The films deposited at oxygen partial pressure of 0.035 and 0.040 mTorr present better photocatalytic activity, which shows clear tendency to increase with oxygen partial pressure. Such photocatalytic activity results are considered to correlate with the crystalline structure, grain sizes and the OH - concentration

  10. Structure and characterization of Sn, Al co-doped zinc oxide thin films prepared by sol–gel dip-coating process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Min-I [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Legrand, David [Institute of Materials Science and Engineering, National Central University, Taiwan (China); Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Lerondel, Gilles [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS - UMR STMR 6279, Université de Technologie de Troyes (France); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taiwan (China)

    2014-11-03

    Transparent conductive zinc oxide co-doped with tin and aluminum (TAZO) thin films were prepared via sol–gel dip-coating process. Non-toxic ethanol was used in this study instead of 2-methoxyethanol used in conventional work. Dip-coating was repeated several times to obtain relatively thick films consisting of six layers. The films were then annealed at 500 °C for 1 h in air or in vacuum and not subsequently as employed in other studies. The X-ray diffraction patterns indicated that all the samples revealed a single phase of hexagonal ZnO polycrystalline structure with a main peak of (002). The optical band gap and resistivity of the TAZO films were in the ranges of 3.28 to 3.32 eV and 0.52 to 575.25 Ω cm, respectively. The 1.0 at.% Sn, 1.0 at.% Al co-doped ZnO thin film annealed in vacuum was found to have a better photoelectrochemical performance with photocurrent density of about 0.28 mA/cm{sup 2} at a bias of 0.5 V vs. SCE under a 300 W Xe lamp illumination with the intensity of 100 mW/cm{sup 2}. Compared to the same dopant concentration but annealed in air (∼ 0.05 mA/cm{sup 2} bias 0.5 V vs. SCE), the photocurrent density of the film annealed in vacuum was 5 times higher than the film annealed in air. Through electrochemical measurements, we found that the dopant concentration of Sn plays an important role in TAZO that affected photocurrent density, stability of water splitting and anti-corrosion. - Highlights: • Al, Sn co-doped ZnO (TAZO) films was synthesized by sol–gel process. • The parameters of TAZO films were dopant concentration and annealed ambient. • The photoelectrochemical characteristics of TAZO films were investigated.

  11. Effect of adding aluminum ion on the structural, optical, electrical and magnetic properties of terbium doped yttrium iron garnet nanoparticles films prepared by sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Aldbea, Ftema W.; Ibrahim, N.B., E-mail: baayah@ukm.edu.my; Yahya, M.

    2014-12-01

    Highlights: • The conductivity of YIG films increased with increasing of Al content. • The saturation magnetization at room temperature decreased with increasing Al{sup 3+} content. • Al{sup 3+} substituted Tb-YIG films has been prepared by a sol-gel method. - Abstract: Tb{sub 0.8}Y{sub 2.2}Al{sub y}Fe{sub 5−y}O{sub 12} nanoparticle films with y = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0 were prepared by a sol–gel method for potential use as a magnetic sensor and in magneto-optical applications. The films were deposited onto quartz substrate, followed by annealing at 900 °C in air for 2 h. X-ray diffractometry results confirmed the formation of a pure garnet structure. The lattice parameter decreased with increasing Al{sup 3+} content due to the substitution of Al{sup 3+} ions with the larger Fe{sup 3+} ions. The grain size of the films decreased up to y = 0.6. This variation is discussed based on the stress on the grain surface. The films observed to be transparent between 76 and 92% in the visible and infrared regions. The films demonstrated a strong absorption of 10{sup 4} cm{sup −1} caused by the charge transfer transition in the UV region. The absorption edge shifts to lower wavelengths at higher Al contents of 0.8 and 1 due to electronic transitions. The conductivity of films increased with increasing of Al content due to the increasing in free carrier concentration. The saturation magnetization at room temperature decreased with increasing Al{sup 3+} content, whereas the coercivity increased markedly at y = 0.6.

  12. Preparation and structural characterization of SnO2 and GeO2 methanol steam reforming thin film model catalysts by (HR)TEM

    International Nuclear Information System (INIS)

    Lorenz, Harald; Zhao Qian; Turner, Stuart; Lebedev, Oleg I.; Van Tendeloo, Gustaaf; Kloetzer, Bernhard; Rameshan, Christoph; Penner, Simon

    2010-01-01

    Structure, morphology and composition of different tin oxide and germanium oxide thin film catalysts for the methanol steam reforming (MSR) reaction have been studied by a combination of (high-resolution) transmission electron microscopy, selected area electron diffraction, dark-field imaging and electron energy-loss spectroscopy. Deposition of the thin films on NaCl(0 0 1) cleavage faces has been carried out by thermal evaporation of the respective SnO 2 and GeO 2 powders in varying oxygen partial pressures and at different substrate temperatures. Preparation of tin oxide films in high oxygen pressures (10 -1 Pa) exclusively resulted in SnO phases, at and above 473 K substrate temperature epitaxial growth of SnO on NaCl(0 0 1) leads to well-ordered films. For lower oxygen partial pressures (10 -3 to 10 -2 Pa), mixtures of SnO and β-Sn are obtained. Well-ordered SnO 2 films, as verified by electron diffraction patterns and energy-loss spectra, are only obtained after post-oxidation of SnO films at temperatures T ≥ 673 K in 10 5 Pa O 2 . Preparation of GeO x films inevitably results in amorphous films with a composition close to GeO 2 , which cannot be crystallized by annealing treatments in oxygen or hydrogen at temperatures comparable to SnO/SnO 2 . Similarities and differences to neighbouring oxides relevant for selective MSR in the third group of the periodic system (In 2 O 3 and Ga 2 O 3 ) are also discussed with the aim of cross-correlation in formation of nanomaterials, and ultimately, also catalytic properties.

  13. Optical and structural properties of zinc oxide films with different thicknesses prepared by successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Taner, Ahmet, E-mail: ataner@anadolu.edu.tr [Institute of Science and Technology, Anadolu University, Eskisehir 26470 (Turkey); Kul, Metin; Turan, Evren; Aybek, A. Senol; Zor, Muhsin [Department of Physics, Anadolu University, Eskisehir 26470 (Turkey); Taskoeprue, Turan [Department of Physics, Anadolu University, Eskisehir 26470 (Turkey); Department of Physics, Cank Latin-Small-Letter-Dotless-I r Latin-Small-Letter-Dotless-I Karatekin University, Cank Latin-Small-Letter-Dotless-I r Latin-Small-Letter-Dotless-I 18100 (Turkey)

    2011-12-01

    In this work, zinc oxide semiconducting films belonging to the II-VI group have been produced by successive ionic layer adsorption and reaction (SILAR) method on glass substrates with 10, 15, 20 and 25 cycles at room temperature. Following the deposition, the samples were dried in air at 400 Degree-Sign C for 1 h. The films were characterized by X-ray diffraction, field emission scanning electron microscopy and optical absorption measurement techniques. The X-ray diffractions of the films showed that they are hexagonal in structure. The crystallite size of ZnO films varied between 34 and 38 nm accordingly with the number of SILAR cycles. The material has exhibited direct band gap transition with the band gap values lying in the range between 3.13 and 3.18 eV. The red shift is observed in the absorption edge as the cycles increased. Transmission of the films decreased from 65 to 40% with increasing the number of cycles.

  14. Optical and structural properties of zinc oxide films with different thicknesses prepared by successive ionic layer adsorption and reaction method

    International Nuclear Information System (INIS)

    Taner, Ahmet; Kul, Metin; Turan, Evren; Aybek, A. Şenol; Zor, Muhsin; Taşköprü, Turan

    2011-01-01

    In this work, zinc oxide semiconducting films belonging to the II-VI group have been produced by successive ionic layer adsorption and reaction (SILAR) method on glass substrates with 10, 15, 20 and 25 cycles at room temperature. Following the deposition, the samples were dried in air at 400 °C for 1 h. The films were characterized by X-ray diffraction, field emission scanning electron microscopy and optical absorption measurement techniques. The X-ray diffractions of the films showed that they are hexagonal in structure. The crystallite size of ZnO films varied between 34 and 38 nm accordingly with the number of SILAR cycles. The material has exhibited direct band gap transition with the band gap values lying in the range between 3.13 and 3.18 eV. The red shift is observed in the absorption edge as the cycles increased. Transmission of the films decreased from 65 to 40% with increasing the number of cycles.

  15. Structural and photodegradation behaviors of Fe{sup 3+}-doping TiO{sub 2} thin films prepared by a sol–gel spin coating

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Huey-Jiuan; Yang, Tien-Syh [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China); Wang, Moo-Chin, E-mail: mcwang@kmu.edu.tw [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 80782, Taiwan (China); Hsi, Chi-Shiung, E-mail: chsi@nuu.edu.tw [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

    2014-10-15

    Highlights: • Pure and various Fe{sup 3+}-doped TiO{sub 2} thin films have been successfully fabricated. • The phase of all thin films was single phase of anatase TiO{sub 2} when calcined at 823 K. • The crystallinity of TiO{sub 2} thin films decreased as Fe{sup 3+}-doping increased. • The photodegradation of each sample increased as the irradiation time increased. • The photodegradation increased as Fe{sup 3+}-doping increased at a fixed irradiation time. - Abstract: Pure and various Fe{sup 3+}-doping TiO{sub 2} thin films have been successfully fabricated on glass substrate prepared by a sol–gel spin coating route. The structural and photodegradation behavior of these films after calcined at various temperatures for 1 h were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectrum and degradation of 1.0 × 10{sup −5} M methylene blue solution. When all thin films after calcined at 823 K for 1 h, the crystalline phase are comprised only contained single phase of anatase TiO{sub 2}. The crystallinity of various Fe{sup 3+}-doping TiO{sub 2} thin films decreases with Fe{sup 3+}-doping concentration increased. The PL intensity of all thin films also decreases with Fe{sup 3+}-doping concentration increased. When all various Fe{sup 3+}-doping TiO{sub 2} thin films after calcined at 823 K for 1 h, the photodegradation of each sample increases with irradiation time increased. Moreover, the photodegradation also increases with Fe{sup 3+}-doping concentration increased when fixed at constant irradiation time.

  16. Silk fibroin/pullulan blend films: Preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Shivananda, C. S.; Rao, B. Lakshmeesha; Madhukumar, R.; Asha, S. [Department of Studies in Physics, Mangalore University, Mangalagangotri – 574 199 (India); Sarojini, B. K. [Department of Industrial Chemistry, Mangalore University, Mangalagangotri, Mangalore –574 199 (India); Somashekhar, R. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore – 570 006 (India); Sangappa, Y., E-mail: syhalabhavi@yahoo.co.in [Department of Studies in Physics, Mangalore University, Mangalagangotri – 574 199 (India); School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

    2016-05-23

    In this work silk fibroin/pullulan blend films have been prepared by solution casting method. The blend films were examined for structural, and thermal properties using X-ray diffraction (XRD), thermogravimatric (TGA) and differential scanning calorimetry (DSC) analysis. The XRD results indicate that with the introduction of pullulan, the interaction between SF and pullulan in the blend films induced the conformation transition of SF films and amorphous phase increases with increasing pullulan ratio. The thermal properties of the blend films were improved significantly in the blend films.

  17. Spray pyrolysis process for preparing superconductive films

    International Nuclear Information System (INIS)

    Hsu, H.M.; Yee, I.Y.

    1991-01-01

    This paper describes a spray pyrolysis method for preparing thin superconductive film. It comprises: preparing a spray pyrolysis solution comprising Bi,Sr,Ca and Cu metals in a solvent; heating a substrate to a first temperature; spraying the solution onto the heated substrate to form a film thereon; heating the film and substrate to a second temperature of about 700 degrees-825 degrees C, the second temperature being higher than the first temperature; heating the film and substrate to a third temperature of about 870 degrees-890 degrees C to melt the film; once the film and substrate reach the third temperature, further heat treating the film and substrate; cooling the film and substrate to ambient temperature. This patent also describes a spray pyrolysis method for preparing thin superconductive films. It comprises: preparing a spray pyrolysis solution comprising Bi, Ca and Cu metals and fluxing agent in a solvent; heating a substrate to a first temperature; spraying the solution onto the heated substrate to form a film thereon; heating the film and substrate to a second temperature about 700 degrees-825 degrees C, the second temperature being higher than the first temperature; heating the film and substrate at a third temperature about 840 degrees-860 degrees C; and cooling the film and substrate to ambient temperature

  18. Spectral, structural, optical and dielectrical studies of UV irradiated Rose Bengal thin films prepared by spin coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Zeyada, H.M., E-mail: hzeyada@gmail.com [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Youssif, M.I.; El-Ghamaz, N.A. [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Aboderbala, M.E.O. [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Department of Physics, Faculty of Science, AlJabl Al Gharbi University (Libya)

    2017-02-01

    Optical properties of pristine and UV irradiated Rose Bengal (RB) films have been investigated using transmittance and reflectance methods. The refractive index(n) and extinction coefficient (k) have been calculated from the absolute values of transmission and reflection spectrum. Single oscillator parameters and Drude model of free carrier absorption have been applied for analysis of the refractive index dispersion. Within the frame work of the band-to-band electron transitions theory; the fundamental absorption edge data were analyzed. Our results suggest that thickness of RB films has no effect on the absorption or the refractive indices in the investigated thicknesses range and within the experimental error. Structural transformation of films from amorphous to polycrystalline has been observed upon UV irradiation. Accordingly, the decreases of all of the absorption coefficient, the energy gap and the refractive index of RB films have been detected. Furthermore, the dependence of the optical functions on UV exposure times has been discussed based on the spectral distribution of the dielectric constant.

  19. Preparation and characterization of structures of oxygen-ion-conductive thin-film membranes; Herstellung und Charakterisierung von sauerstoffionenleitenden Duennschichtmembranstrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Betz, Michael

    2010-07-01

    In power plants using Oxyfuel technology, fossil fuels are combusted with pure oxygen. This leads to carbon dioxide of high purity, which is necessary for its transport and storage. Oxygen separation by means of perovskitic membranes have great potential to decrease the efficiency losses caused by the allocation of the enormous amounts of oxygen. The aim of this work is the preparation and characterisation of thin film membranes on porous substrates and the analysis of their oxygen permeation properties. Therefore the material system A{sub 0,68}Sr{sub 0,3}Fe{sub 0,8}Co{sub 0,2}O{sub 3-{delta}} (A68SFC) was analysed, where the A-site was substituted with Lanthanides (La, Pr, Nd, Eu, Sm, Gd, Dy, Er) or alkaline earth metals (Ba, Ca). After an extensive characterisation, the selection was reduced to the substitutions with La, Pr and Nd. Other compounds could not meet the demands with regard to phase purity, chemical stability or extension behaviour. All analyses were conducted in comparison to Ba{sub 0,5}Sr{sub 0,5}Co{sub 0,8}Fe{sub 0,2}O{sub 3-{delta}} (BSCF) which is known to exhibit higher permeation rates, but is more sensitive to stability issues. The dependency of permeation rates on membrane thickness or oxygen partial pressures on both membrane surfaces is discussed by means of permeation measurements conducted on bulk BSCF membranes. These cannot be described completely by the Wagner equation. This is due to changes of the driving force originating from influences of the surface reaction kinetics and concentration polarisation on the membrane surface, which are not considered. Porous substrates for asymmetric membranes were manufactured by tape casting and warm pressing. The application of the functional layer was performed via screen printing. Permeation measurements show that the asymmetric structures exhibit higher permeation rates in comparison to bulk membranes with L=1 mm. The moderate increase can be attributed to the low gas permeability of the

  20. Study of the effect of the deposition parameters on the structural, electric and optical characteristics of polymorphous silicon films prepared by low frequency PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Torres, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R. [Universidad Autonoma de Ciudad Juarez, Electrical Deparment, Chihuahua (Mexico); Zuniga, C.; Torres-Rios, A.; Monfil, K.; Rosales, P.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico)

    2011-10-25

    In this work we present our results on the deposition and characterization of polymorphous silicon (pm-Si:H) films prepared by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the plasma deposition parameters (as the chamber pressure and gas flow rates of SiH{sub 4} and H{sub 2}) on the structural, electric, and optical characteristics of the films. The temperature dependence of conductivity ({sigma}(T)), activation energy (E{sub a}), optical band gap (E{sub g}) and deposition rate (V{sub d}) were extracted for pm-Si:H films deposited at different pressure values and different gas flow rates. We observed that the chamber pressure is an important parameter that has a significant effect on the electric characteristics, and as well on the morphology of the pm-Si:H films (deduced from atomic force microscopy). It was found an optimal pressure range, in order to produce pm-Si:H films with high E{sub a} and room temperature conductivity, {sigma}{sub RT}, which are key parameters for thermal detection applications.

  1. Study of the effect of the deposition parameters on the structural, electric and optical characteristics of polymorphous silicon films prepared by low frequency PECVD

    International Nuclear Information System (INIS)

    Moreno, M.; Torres, A.; Ambrosio, R.; Zuniga, C.; Torres-Rios, A.; Monfil, K.; Rosales, P.; Itzmoyotl, A.

    2011-01-01

    In this work we present our results on the deposition and characterization of polymorphous silicon (pm-Si:H) films prepared by low frequency plasma enhanced chemical vapor deposition (LF-PECVD). We have studied the effect of the plasma deposition parameters (as the chamber pressure and gas flow rates of SiH 4 and H 2 ) on the structural, electric, and optical characteristics of the films. The temperature dependence of conductivity (σ(T)), activation energy (E a ), optical band gap (E g ) and deposition rate (V d ) were extracted for pm-Si:H films deposited at different pressure values and different gas flow rates. We observed that the chamber pressure is an important parameter that has a significant effect on the electric characteristics, and as well on the morphology of the pm-Si:H films (deduced from atomic force microscopy). It was found an optimal pressure range, in order to produce pm-Si:H films with high E a and room temperature conductivity, σ RT , which are key parameters for thermal detection applications.

  2. Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO{sub 2} structure

    Energy Technology Data Exchange (ETDEWEB)

    Poghossian, A. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany)], E-mail: a.poghossian@fz-juelich.de; Abouzar, M.H.; Razavi, A.; Baecker, M. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany); Bijnens, N. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Williams, O.A.; Haenen, K. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Division IMOMEC, IMEC vzw., Diepenbeek (Belgium); Moritz, W. [Humboldt University Berlin, Berlin (Germany); Wagner, P. [Institute for Materials Research, Hasselt University, Diepenbeek (Belgium); Schoening, M.J. [Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Juelich, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich GmbH, Juelich (Germany)

    2009-10-30

    A capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) sensor with improved pH and penicillin sensitivity has been realised using a nanocrystalline-diamond (NCD) film as sensitive gate material. The NCD growth process on SiO{sub 2} as well as an additional surface treatment in oxidising medium have been optimised to provide high pH-sensitive, non-porous O-terminated films without damage of the underlying SiO{sub 2} layer. The surface morphology of O-terminated NCD thin films and the layer structure of EDIS sensors have been studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) methods. To establish the relative coverage of the surface functional groups generated by the oxidation of NCD surfaces, X-ray photoelectron spectroscopy analysis was carried out. The hydrophilicity of NCD thin films has been studied by water contact-angle measurements. A nearly Nernstian pH sensitivity of 54-57 mV/pH has been observed for O-terminated NCD films treated in an oxidising boiling mixture for 80 min and in oxygen plasma. The high pH-sensitive properties of O-terminated NCD have been used to develop an EDIS-based penicillin biosensor. A freshly prepared penicillin biosensor possesses a high sensitivity of 85 mV/decade in the concentration range of 0.1-2.5 mM penicillin G. The lower detection limit is 5 {mu}M.

  3. Nanocrystalline-diamond thin films with high pH and penicillin sensitivity prepared on a capacitive Si-SiO2 structure

    International Nuclear Information System (INIS)

    Poghossian, A.; Abouzar, M.H.; Razavi, A.; Baecker, M.; Bijnens, N.; Williams, O.A.; Haenen, K.; Moritz, W.; Wagner, P.; Schoening, M.J.

    2009-01-01

    A capacitive field-effect EDIS (electrolyte-diamond-insulator-semiconductor) sensor with improved pH and penicillin sensitivity has been realised using a nanocrystalline-diamond (NCD) film as sensitive gate material. The NCD growth process on SiO 2 as well as an additional surface treatment in oxidising medium have been optimised to provide high pH-sensitive, non-porous O-terminated films without damage of the underlying SiO 2 layer. The surface morphology of O-terminated NCD thin films and the layer structure of EDIS sensors have been studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) methods. To establish the relative coverage of the surface functional groups generated by the oxidation of NCD surfaces, X-ray photoelectron spectroscopy analysis was carried out. The hydrophilicity of NCD thin films has been studied by water contact-angle measurements. A nearly Nernstian pH sensitivity of 54-57 mV/pH has been observed for O-terminated NCD films treated in an oxidising boiling mixture for 80 min and in oxygen plasma. The high pH-sensitive properties of O-terminated NCD have been used to develop an EDIS-based penicillin biosensor. A freshly prepared penicillin biosensor possesses a high sensitivity of 85 mV/decade in the concentration range of 0.1-2.5 mM penicillin G. The lower detection limit is 5 μM.

  4. Influence of Al doping on structural and optical properties of Mg–Al co-doped ZnO thin films prepared by sol–gel method

    International Nuclear Information System (INIS)

    Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun

    2014-01-01

    Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of

  5. Pseudocapacitive properties of nano-structured anhydrous ruthenium oxide thin film prepared by electrostatic spray deposition and electrochemical lithiation/delithiation

    Energy Technology Data Exchange (ETDEWEB)

    Park, S.H.; Kim, J.Y.; Kim, K.B. [Division of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

    2010-10-15

    Nano-structured anhydrous ruthenium oxide (RuO{sub 2}) thin films were prepared using an electrostatic spray deposition (ESD) technique followed by electrochemical lithiation and delithiation. During the electrochemical lithiation process, RuO{sub 2} decomposed to nano-structured metallic ruthenium Ru with the concomitant formation of Li{sub 2}O. Nano-structured RuO{sub 2} was formed upon subsequent electrochemical extraction of Li from the Ru/Li{sub 2}O nanocomposite. Electrochemical lithiation/deliathiation at different charge/discharge rates (C-rate) was used to control the nano-structure of the anhydrous RuO{sub 2}. Electrochemical lithiation/delithiation of the RuO{sub 2} thin film electrode at different C-rates was closely related to the specific capacitance and high rate capability of the nano-structured anhydrous RuO{sub 2} thin film. Nano-structured RuO{sub 2} thin films prepared by electrochemical lithiation and delithiation at 2C rate showed the highest specific capacitance of 653 F g{sup -1} at 20 mV s{sup -1}, which is more than two times higher than the specific capacitance of 269 F g{sup -1} for the as-prepared RuO{sub 2}. In addition, it showed 14% loss in specific capacitance from 653 F g{sup -1} at 20 mV s{sup -1} to 559 F g{sup -1} at 200 mV s{sup -1}, indicating significant improvement in the high rate capability compared to the 26% loss of specific capacitance of the as-prepared RuO{sub 2} electrode from 269 F g{sup -1} at 20 mV s{sup -1} to 198 F g{sup -1} at 200 mV s{sup -1} for the same change in scan rate. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  6. Structural, optical and NO{sub 2} gas sensing properties of ZnMgO thin films prepared by the sol gel method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: chbil.widad@live.fr [Unité de Service Commun de Recherche « High resolution X-ray diffractometer », Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019, Monastir (Tunisia); Laboratoire Physico-chimie des Matériaux, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); Boukadhaba, M.A. [Unité de Service Commun de Recherche « High resolution X-ray diffractometer », Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019, Monastir (Tunisia); Laboratoire Physico-chimie des Matériaux, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); Madhi, I. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050, Hammam-Lif (Tunisia); and others

    2017-01-15

    In this present work, ZnO and ZnMgO thin films prepared by a sol-gel process were deposited on glass substrates via spin coating technique. The structural, morphological and optical properties of the obtained films were investigated. X-ray diffraction study revealed that all layers exhibit a hexagonal wurtzite structure without any secondary phase segregation. The atomic force microscopy (AFM) depicts that the grains size of ours samples decreases as magnesium content increases. The absorption spectra obtained on ZnMgO thin films show a band gap tuning from 3.19 to 3.36 eV, which is also consistent with blue shifting of near-band edge PL emission, measured at low temperature. The incorporated amount of magnesium was calculated and confirmed by EDX. The gas sensing performances were tested in air containing NO{sub 2} for different operating temperatures. The experimental result exhibited that ZnMgO sensors shows a faster response and recovery time than the ZnO thin films. The resistivity and the sensor response as function of Mg content were also investigated.

  7. Structural and Optical Properties of ZnO Thin Film Prepared by Oxidation of Zn Metal Powders

    International Nuclear Information System (INIS)

    Hassan, N.K.; Hashim, M.R.

    2013-01-01

    High quality ZnO nano structures have been fabricated at room temperature by a simple vacuum thermal evaporator from metallic Zn powders (99.999 % purity) on a silicon (100) substrate. The Zn thin films were then transferred into a thermal tube furnace for oxidation at 700 degree Celsius for different time durations. Time was found to be a critical factor in the synthesis. This was followed by characterization of their morphological, structural and optical properties. The morphology of the grown ZnO nano structures exhibited several large grains, which increased gradually with increasing oxidation time. The crystallinity of the grown nano structures was investigated using X-ray diffraction, revealing that the synthesized ZnO was in hexagonal wurtzite phase. The photoluminescence (PL) spectra of the fabricated ZnO nano structures showed high intensity peak in the UV region due to near-band-edge (NBE) emission in which the structures oxidized for 30 min showing highest intensity. (author)

  8. Preparation and characterization of gelatin/cerium(Ⅲ) film

    Institute of Scientific and Technical Information of China (English)

    黄崇军; 黄雅钦; 田娜; 童元建; 殷瑞贤

    2010-01-01

    A novel gelatin film with antibacterial activity was prepared by electrostatic crosslinking using cerium (Ⅲ) nitrate hexahydrate as the crosslinking agent. The structure and properties of the films were investigated by Fourier transform infrared spectra, tensile tests, thermogravimetric analysis, static drop contact angle and disc diffusion method. The results showed that cross-linking could not only improve the thermal and mechanical properties and lower the hydrophilic property of the films, but also make...

  9. Crystal Structure, Optical, and Electrical Properties of SnSe and SnS Semiconductor Thin Films Prepared by Vacuum Evaporation Techniques for Solar Cell Applications

    Science.gov (United States)

    Ariswan; Sutrisno, H.; Prasetyawati, R.

    2017-05-01

    Thin films of SnSe and SnS semiconductors had been prepared by vacuum evaporation techniques. All prepared samples were characterized on their structure, optical, and electrical properties in order to know their application in technology. The crystal structure of SnSe and SnS was determined by X-Ray Diffraction (XRD) instrument. The morphology and chemical composition were obtained by Scanning Electron Microscopy (SEM) coupled with Energy Dispersive of X-Ray Analysis (EDAX). The optical property such as band gap was determined by DR-UV-Vis (Diffuse Reflectance-Ultra Violet-Visible) spectroscopy, while the electrical properties were determined by measuring the conductivity by four probes method. The characterization results indicated that both SnSe and SnS thin films were polycrystalline. SnSe crystallized in an orthorhombic crystal system with the lattice parameters of a = 11.47 Å, b = 4.152 Å and c = 4.439 Å, while SnS had an orthorhombic crystal system with lattice parameters of a = 4.317 Å, b = 11.647 Å and c = 3.981 Å. Band gaps (Eg) of SnSe and SnS were 1.63 eV and 1.35 eV, respectively. Chemical compositions of both thin films were non-stoichiometric. Molar ratio of Sn : S was close to ideal which was 1 : 0.96, while molar ratio of Sn : S was 1 : 0.84. The surface morphology described the arrangement of the grains on the surface of the thin film with sizes ranging from 0.2 to 0.5 microns. Color similarity on the surface of the SEM images proved a homogenous thin layer.

  10. Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

    Energy Technology Data Exchange (ETDEWEB)

    Das, Sayantan; Alford, T. L. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, USA and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-06-28

    Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

  11. Novel transparent and flexible nanocomposite film prepared from chrysotile nanofibres

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Kun, E-mail: kliu@csu.edu.cn [School of Minerals Processing and Bioengineering, Central South University, Changsha 410083 (China); Zhu, Binnan; Feng, Qiming [School of Minerals Processing and Bioengineering, Central South University, Changsha 410083 (China); Duan, Tao [Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology and Research Center of Laser Fusion, CAEP, Mianyang 621010 (China)

    2013-10-01

    In the present study, chrysotile nanofibres, obtained from physicochemical dispersion of natural chrysotile, were used to prepare nanofibre sheets by vacuum filtration. As-prepared sheets were then impregnated by UV-curable resin and cured by ultraviolet light to fabricate the flexible and transparent nanocomposite films. Observed from SEM, the transparent films showed a smooth surface and a typical sandwich structure in cross section, viz. nanofibre sheet filled with resin was sandwiched by two layers of resin. XRD patterns indicated the amorphous nature of cured resin and characteristic crystallographic structure of chrysotile in nanocomposite films. Though the nanofibre sheets were white in colour, and nanofibre contents in nanocomposites were as much as 43.4 wt%, the nanocomposite films displayed an excellent optical transparency with about 85% light transmittance in the visible light range. Tensile tests showed that the addition of nanofibres resulted in a great improvement in mechanical strength of the nanocomposite films; with the increase of nanofibre contents, the modulus and tensile strength of nanocomposite films increased gradually. - Graphical abstract: Photos show the experimental phenomenon. The white nanofibre sheets can be written or printed like paper, and it's very interested that the handwriting is clearly visible from the front and back of the transparent films prepared from nanofibre sheets by vacuum impregnation and UV curing. This phenomenon can be attributed to the increase of transparency of film, which results from the replacement of air interstices in nanofibre sheet by resin with higher refractive index. Visible light can pass easily through the transparent film without obvious loss, but can be apparently adsorbed and scattered by ink particles that adhered to nanofibres and embedded in resin. - Highlights: • A flexible and transparent film is prepared from chrysotile nanofibres. • The nanofibre sheet is sandwiched by two

  12. Novel transparent and flexible nanocomposite film prepared from chrysotile nanofibres

    International Nuclear Information System (INIS)

    Liu, Kun; Zhu, Binnan; Feng, Qiming; Duan, Tao

    2013-01-01

    In the present study, chrysotile nanofibres, obtained from physicochemical dispersion of natural chrysotile, were used to prepare nanofibre sheets by vacuum filtration. As-prepared sheets were then impregnated by UV-curable resin and cured by ultraviolet light to fabricate the flexible and transparent nanocomposite films. Observed from SEM, the transparent films showed a smooth surface and a typical sandwich structure in cross section, viz. nanofibre sheet filled with resin was sandwiched by two layers of resin. XRD patterns indicated the amorphous nature of cured resin and characteristic crystallographic structure of chrysotile in nanocomposite films. Though the nanofibre sheets were white in colour, and nanofibre contents in nanocomposites were as much as 43.4 wt%, the nanocomposite films displayed an excellent optical transparency with about 85% light transmittance in the visible light range. Tensile tests showed that the addition of nanofibres resulted in a great improvement in mechanical strength of the nanocomposite films; with the increase of nanofibre contents, the modulus and tensile strength of nanocomposite films increased gradually. - Graphical abstract: Photos show the experimental phenomenon. The white nanofibre sheets can be written or printed like paper, and it's very interested that the handwriting is clearly visible from the front and back of the transparent films prepared from nanofibre sheets by vacuum impregnation and UV curing. This phenomenon can be attributed to the increase of transparency of film, which results from the replacement of air interstices in nanofibre sheet by resin with higher refractive index. Visible light can pass easily through the transparent film without obvious loss, but can be apparently adsorbed and scattered by ink particles that adhered to nanofibres and embedded in resin. - Highlights: • A flexible and transparent film is prepared from chrysotile nanofibres. • The nanofibre sheet is sandwiched by two

  13. Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

    2017-11-29

    The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

  14. Investigation on structural and optical properties of ZnO film prepared by simple wet chemical method

    Science.gov (United States)

    Sholehah, Amalia; Mulyadi, Rendi; Haryono, Didied; Muttakin, Imamul; Rusbana, Tb Bahtiar; Mardiyanto

    2018-04-01

    ZnO thin layer has a broad potential application in electronic and optoelectronic devices. In this study, vertically align ZnO layers were deposited on ITO glass using wet chemistry method. The seed layers were prepared using electrodeposition technique at 3°C. The growing process was carried out using chemical bath deposition at 90°C. To improve the structural properties, two different hydrothermal treatment variations were applied separately. From the experiment, it is shown that the hydrothermal process using N2 gas has given the best result, with average diameter, crystallite size, and band-gap energy of 68.83 nm; 56.37 nm; and 3.16 eV, respectively.

  15. Preparation of boron-nitrogen films by sputtering

    International Nuclear Information System (INIS)

    Klose, S.; Winde, B.

    1980-01-01

    Hard boron-nitrogen films adherent to various substrates can be prepared by sputtering. IR investigations suggest the existence of cubic boron nitride in certain layers. Transmission electron microscope studies have shown a quasi-amorphous structure irregularly incorporating crystallites of zinc blende structure of some nm in diameter

  16. Structural, optical and electrical properties of CeO2 thin films simultaneously prepared by anodic and cathodic electrodeposition

    Science.gov (United States)

    Yang, Yumeng; Du, Xiaoqing; Yi, Chenxi; Liu, Jiao; Zhu, Benfeng; Zhang, Zhao

    2018-05-01

    CeO2 thin films were deposited on stainless steel (SS) and indium tin oxide (ITO)-coated glass by simultaneous anodic and cathodic electrodeposition, and the influence of negative potential on the formation of ceria films was studied with scanning electron microscopy, X-ray diffraction, Raman spectroscopy, van der Pauw measurements, UV-visible spectroscopy and X-ray photoelectron spectroscopy. The results show that CeO2 films on the anode are slightly affected by the potential, but the particle size, crystal orientation, strain, film thickness, resistivity and Ce(III) content of the films on the cathode increases with increasing potential on the SS substrate. Contradictory to the results of the SS cathode, redshift (Ed changed from 3.95 eV to 3.56 eV and Ei changed from 3.42 eV to 3.04 eV) occurring in the absorption spectrum of CeO2 deposited on the ITO-coated glass cathode indicates that the content of Ce3+ in the cathodic films is dependent on the adopted substrates and decreases as the applied potential is increased.

  17. Structural and luminescence properties of yellow Y3Al5012:Ce3+ thin film phosphors prepared by Pulsed Laser Deposition

    CSIR Research Space (South Africa)

    Dejene, FB

    2012-07-01

    Full Text Available of the phosphore/epoxy hybrid system is the difficulty of achieving uniform emission of white light from the LED. In order to overcome the challenges of using mixtures of phosphore powders and epoxies thin film phosphore has been used. In this study, YAG phosphore...

  18. Studying Structural, Optical, Electrical, and Sensing Properties of Nanocrystalline SnO2:Cu Films Prepared by Sol-Gel Method for CO Gas Sensor Application at Low Temperature

    Science.gov (United States)

    Al-Jawad, Selma M. H.; Elttayf, Abdulhussain K.; Saber, Amel S.

    Nanocrystalline SnO2 and SnO2:Cu thin films derived from SnCl2ṡ2H2O precursors have been prepared on glass substrates using sol-gel dip-coating technique. The deposited film was 300±20nm thick and the films were annealed in air at 500∘C for 1h. Structural, optical and sensing properties of the films were studied under different preparation conditions, such as Cu-doping concentration of 2%, 4% and 6wt.%. X-ray diffraction studies show the polycrystalline nature with tetragonal rutile structure of SnO2 and Cu:SnO2 thin films. The films have highly preferred orientation along (110). The crystallite size of the prepared samples reduced with increasing Cu-doping concentrations and the addition of Cu as dopants changed the structural properties of the thin films. Surface morphology was determined through scanning electron microscopy and atomic force microscopy. Results show that the particle size decreased as doping concentration increased. The films have moderate optical transmission (up to 82.4% at 800nm), and the transmittance, absorption coefficient and energy gap at different Cu-doping concentration were measured and calculated. Results show that Cu-doping decreased the transmittance and energy gap whereas it increased the absorption coefficient. Two peaks were noted with Cu-doping concentration of 0-6wt.%; the first peak was positioned exactly at 320nm ultraviolet emission and the second was positioned at 430-480nm. Moreover, emission bands were noticed in the photoluminescence spectra of Cu:SnO2. The electrical properties of SnO2 films include DC electrical conductivity, showing that the films have two activation energies, namely, Ea1 and Ea2, which increase as Cu-doping concentration increases. Cudoped nanocrystalline SnO2 gas-sensing material has better sensitivity to CO gas compared with pure SnO2.

  19. Epitaxial ternary nitride thin films prepared by a chemical solution method

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  20. Effect of Mn doping on the structural, magnetic, optical and electrical properties of ZrO_2–SnO_2 thin films prepared by sol–gel method

    International Nuclear Information System (INIS)

    Anitha, V.S.; Sujatha Lekshmy, S.; Joy, K.

    2016-01-01

    Manganese doped ZrO_2–SnO_2 (ZrO_2–SnO_2: Mn) nanocomposite thin films were prepared using sol – gel dip coating technique. The structural, morphological, magnetic, optical and electrical properties of the films were studied for undoped and different (15 mol %) manganese doping concentrations. X-ray diffraction pattern (XRD) of films showed the formation of tetragonal phase of SnO_2 and orthorhombic ZrSnO_4. Decrease in crystallinity with increase of Mn concentration was observed for the films. Scanning electron microscopy (SEM) showed the formation of grain growth with an increase in Mn concentration. X-ray photo electron spectroscopy (XPS) confirmed the presence of Zr"4"+, Sn"4"+ and Mn"2"+ ion in ZrO_2–SnO_2: Mn films. Vibrating sample magnetometer (VSM) measurements reveal the presence of magnetic properties in Mn doped nanocomposite thin films. Antiferromagnetic interactions were observed for 5 mol % Mn doping. An average transmittance >80% (UV - Vis region) was observed for all the films. Band gap of the films decreased from 4.78 to 4.41 eV with increase in Mn concentration. Photoluminescence (PL) spectra of the films exhibited emission peaks in visible region of the electromagnetic spectra. Conductivity of the film increased up to 3 mol % Mn doping and then decreased. - Highlights: • ZrO_2–SnO_2: Mn films were deposited onto quartz substrates by Sol –Gel dip coating. • Structural, magnetic, optical and electrical properties of the films were analyzed. • Optical band gap decreased with increase in manganese concentration. • Ferromagnetic behavior was observed for Mn doped films. • These ferromagnetic ZrO_2–SnO_2: Mn films find application in spintronic devices.

  1. Preparation of DNA films for studies under vacuum conditions

    DEFF Research Database (Denmark)

    Smialek, M. A.; Balog, Richard; Jones, N. C.

    2010-01-01

    process. Using a transmission electron microscope we also examined the structure of the DNA films which are formed upon evacuation and how the proposed adducts influence the preparation process. It was found that the addition of bases cause the DNA to aggregate, noting that a base is required...

  2. Preparation and properties of thin films treatise on materials science and technology

    CERN Document Server

    Tu, K N

    1982-01-01

    Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properti

  3. A facile dip-coating process for preparing highly durable superhydrophobic surface with multi-scale structures on paint films.

    Science.gov (United States)

    Cui, Zhe; Yin, Long; Wang, Qingjun; Ding, Jianfu; Chen, Qingmin

    2009-09-15

    Superhydrophobic surfaces with multi-scale nano/microstructures have been prepared on epoxy paint surfaces using a feasible dip-coating process. The microstructures with 5-10 microm protuberances were first prepared on epoxy paint surface by sandblast. Then the nanostructures were introduced on the microstructure surface by anchoring 50-100 nm SiO(2) particles (nano-SiO(2)) onto the sandblasted paint surface, which was completed by dip-coating with a nano-SiO(2)/epoxy adhesive solution (M1). At last the surface was further modified for enhancing hydrophobicity by another dip-coating with a solution of a low surface energy polymer, aminopropyl terminated polydimethylsiloxane (ATPS) modified epoxy adhesive (M2). The water contact angle of the as-prepared samples reached as high as 167.8 degrees and the sliding angle was 7 degrees. The prepared superhydrophobic surface exhibited excellent durability to the high speed scouring test and high stability in neutral and basic aqueous solutions and some common organic solvents. In addition, this method can be adopted to fabricate large scale samples with a good homogeneity of the whole surface at very low cost.

  4. Preparation and Characterization of Chitosan—Agarose Composite Films

    Directory of Open Access Journals (Sweden)

    Zhang Hu

    2016-09-01

    Full Text Available Nowadays, there is a growing interest to develop biodegradable functional composite materials for food packaging and biomedicine applications from renewable sources. Some composite films were prepared by the casting method using chitosan (CS and agarose (AG in different mass ratios. The composite films were analyzed for physical-chemical-mechanical properties including tensile strength (TS, elongation-at-break (EB, water vapor transmission rate (WVTR, swelling ratio, Fourier-transform infrared spectroscopy, and morphology observations. The antibacterial properties of the composite films were also evaluated. The obtained results reveal that an addition of AG in varied proportions to a CS solution leads to an enhancement of the composite film’s tensile strength, elongation-at-break, and water vapor transmission rate. The composite film with an agarose mass concentration of 60% was of the highest water uptake capacity. These improvements can be explained by the chemical structures of the new composite films, which contain hydrogen bonding interactions between the chitosan and agarose as shown by Fourier-transform infrared spectroscopy (FTIR analysis and the micro-pore structures as observed with optical microscopes and scanning electron microscopy (SEM. The antibacterial results demonstrated that the films with agarose mass concentrations ranging from 0% to 60% possessed antibacterial properties. These results indicate that these composite films, especially the composite film with an agarose mass concentration of 60%, exhibit excellent potential to be used in food packaging and biomedical materials.

  5. Synthesis and characterization of structural, morphological and photosensor properties of Cu0.1Zn0.9S thin film prepared by a facile chemical method

    Science.gov (United States)

    Gubari, Ghamdan M. M.; Ibrahim Mohammed S., M.; Huse, Nanasaheb P.; Dive, Avinash S.; Sharma, Ramphal

    2018-05-01

    The Cu0.1Zn0.9S thin film was grown by facile chemical bath deposition (CBD) method on glass substrates at 60°C. The structural, morphological, photosensor properties of the as-grown thin film has been investigated. The structural and phase confirmation of the as-grown thin film was carried out by X-ray diffraction (XRD) technique and Raman spectroscopy. The FE-SEM images showed that the thin films are well covered with material on an entire glass substrate. From the optical absorption spectrum, the direct band gap energy for the Cu0.1Zn0.9S thin film was found to be ˜3.16 eV at room temperature. The electrical properties were measured at room temperature in the voltage range ±2.5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ˜72 % for 260 W.

  6. Thin films prepared from tungstate glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

    2008-01-30

    Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

  7. Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

    Science.gov (United States)

    Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

    2017-09-01

    In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

  8. [Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

    Science.gov (United States)

    Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

    2014-07-01

    In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

  9. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  10. Preparation and mechanical properties of edible rapeseed protein films.

    Science.gov (United States)

    Jang, Sung-Ae; Lim, Geum-Ok; Song, Kyung Bin

    2011-03-01

    Edible films were manufactured from rapeseed oil extraction residues. To prepare rapeseed protein (RP) films, various concentrations of plasticizers and emulsifiers were incorporated into the preparation of a film-forming solution. The optimal conditions for the preparation of the RP film were 2% sorbitol/0.5% sucrose as plasticizer and 1.5% polysorbate 20 as an emulsifier. In addition, RP blend films were prepared. Gelidium corneum or gelatin was added to improve the physical properties of the RP film, and the highest tensile strength value of the films was 53.45 MPa for the 3% RP/4% gelatin film. Our results suggest that the RP-gelatin blend film is suitable for applications in food packaging. Edible RP films prepared in the present investigation can be applied in food packaging.

  11. Experimental and theoretical investigation of electronic structure of SrFeO3-xFx epitaxial thin films prepared via topotactic reaction

    Science.gov (United States)

    Katayama, Tsukasa; Chikamatsu, Akira; Kamisaka, Hideyuki; Kumigashira, Hiroshi; Hasegawa, Tetsuya

    2016-02-01

    We investigated the electronic structure of perovskite SrFeO3-xFx (0.6 ≤ x ≤ 1) films by optical absorption, photoemission, and X-ray absorption spectroscopies, as well as density functional theory (DFT)-based calculations. The optical bandgap expanded with x, yielding a wider direct bandgap for the SrFeO2F film than for the LaFeO3 film. The DFT calculations suggested that the majority of FeO4F2 octahedra in the SrFeO2F film had cis configurations and that the enlarged bandgap mainly originated from bond bending in the O-Fe-O chains. We experimentally observed the valence and conduction bands of the SrFeO2F film, and found them to be qualitatively consistent with the results of DFT-based calculations.

  12. Structural, electrical and magnetic studies of Co:SnO{sub 2} and (Co,Mo):SnO{sub 2} films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dalui, S., E-mail: ssdalui@fc.ul.pt [University of Lisbon, Physics Dept. and ICEMS, 1749-016 Lisboa (Portugal); Instituto Superior de Engenharia de Lisboa and ICEMS, 1959-007 Lisboa (Portugal); Rout, S. [University of Lisbon, Physics Dept. and ICEMS, 1749-016 Lisboa (Portugal); Silvestre, A.J. [Instituto Superior de Engenharia de Lisboa and ICEMS, 1959-007 Lisboa (Portugal); Lavareda, G. [New University of Lisbon, Mater. Sci. Dept. and CTS, 2829-516 Caparica (Portugal); Pereira, L.C.J. [Instituto Superior Técnico, ITN and CFMCUL, 2686-953 Sacavém (Portugal); Brogueira, P. [Instituto Superior Técnico, Physics Dept. and ICEMS, 1049-001 Lisboa (Portugal); Conde, O. [University of Lisbon, Physics Dept. and ICEMS, 1749-016 Lisboa (Portugal)

    2013-08-01

    Here we report on the structural, optical, electrical and magnetic properties of Co-doped and (Co,Mo)-codoped SnO{sub 2} thin films deposited on r-cut sapphire substrates by pulsed laser deposition. Substrate temperature during deposition was kept at 500 °C. X-ray diffraction analysis showed that the undoped and doped films are crystalline with predominant orientation along the [1 0 1] direction regardless of the doping concentration and doping element. Optical studies revealed that the presence of Mo reverts the blue shift trend observed for the Co-doped films. For the Co and Mo doping concentrations studied, the incorporation of Mo did not contribute to increase the conductivity of the films or to enhance the ferromagnetic order of the Co-doped films.

  13. Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Moriga, Toshihiro; Mikawa, Michio; Sakakibara, Yuji; Misaki, Yukinori; Murai, Kei-ichiro; Nakabayashi, Ichiro; Tominaga, Kikuo; Metson, James B.

    2005-01-01

    Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In 2 O 3 mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In 2 O 3 thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films

  14. Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

    2015-06-24

    Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

  15. Preparation and characterisation of Al-doped Zn O thin films

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.; Nounou, F.

    2010-12-01

    Al-doped Zn O thin films were prepared using RF magnetron sputtering under several preparation conditions (deposition pressure, RF power, substrate temperature). The films were optically and electrically characterized by measuring their transmission and resistance. Furthermore, x-ray diffraction spectroscopy was used in order to study the structural properties of these films. As a result of this study, the preparation conditions suitable for the highly conductive part of the window layer in solar cells were determined. (author)

  16. Structural properties of perovskite films on zinc oxide nanoparticles-reduced graphene oxide (ZnO-NPs/rGO) prepared by electrophoretic deposition technique

    Science.gov (United States)

    Bahtiar, Ayi; Nurazizah, Euis Siti; Latiffah, Efa; Risdiana, Furukawa, Yukio

    2018-02-01

    Perovskite solar cells highly believed as next generation solar cells to replace currently available inorganic silicon solar cells due to their high power conversion efficiency and easy processing to thin films using solution processing techniques. Performance and stability, however still need to be improved for mass production and widely used for public electricity generation. Perovskite solar cells are commonly deposited on Titanium Dioxide (TiO2) film as an effective electron transport layer (ETL). We used Zinc Oxide nanoparticles (ZnO-NPs) as ETL in perovskite solar cells due to the low temperature required for crystallization and can be formed into different shapes of nanostructures. However, perovskite film can easily degrade into insulating lead iodide due to deprotonation of the methylammoniumcation at the surface of ZnO-NPs, in particular when it stored in ambient air with high relative humidity. The degradation of perovskite layer is therefore needed to be overcome. Here, we capped ZnO-NPs with reduced graphene oxide (rGO) to overcome the degradation of perovskite film where ZnO-NPs is synthesized by sol-gel method. The average nanoparticle size of ZnO is 15 nm. ZnO-NPs and ZnO-NPs-rGO films are prepared using electrophoretic deposition technique, which can produce large area with good homogeneity and high reproducibility. The stability of perovskite layer can significantly be improved by capping ZnO with rGO, which is indicated by absence of color change of perovskite after storage for 5 (five) days in ambient air with relative humidity above 95%. Moreover, the X-Ray Diffaction peaks of perovskite film are more preserved when deposited on ZnO/rGO film than using only ZnO film. We strongly believe, by capping ZnO film with rGO, both the performance and stability of perovskite solar cells can be improved significantly.

  17. Preparation of mesoporous silica films SBA-15 over different substrates

    International Nuclear Information System (INIS)

    Campos, V.O.; Sousa, E.M.B. de; Macedo, W.A.A.

    2010-01-01

    Mesoporous materials have been target of frequent interest due to its wide application possibilities, for example development of gas sensors, catalysis, molecules transportation, pharmaceuticals release, synthesis of auto-organized nanostructures, among others. The possibilities of application are enhanced when such materials are disposed in the form of thin and ultrathin films. In this work the preparation of mesoporous SBA-15 silica films is explored by means of the dipcoating technique of a sol-gel on different substrates (glass slides, stainless steel, copper), using the surfactant poly(ethylene glycol)-block-poly(propylene glycol)- block-poly(ethylene glycol), known as P123, a block copolymer. Synthesis parameters surfactant concentration, aging time and temperature were investigated. In this work we present the morphological and structural characterization of the prepared films, which were obtained using atomic force microscopy and x-ray fluorescence and diffraction. (author)

  18. Effect of aging time on the optical, structural and photoluminescence properties of nanocrystalline ZnO films prepared by a sol–gel method

    International Nuclear Information System (INIS)

    Ibrahim, N.B.; AL-Shomar, S.M.; Ahmad, Sahrim Hj.

    2013-01-01

    The nanocrystalline zinc oxide (ZnO) films were deposited by a sol–gel method and the effect of sol aging time 0, 1, 7 and 11 days on the structural, optical and photoluminescence properties were investigated. X-ray diffraction analysis showed that the deposited films were polycrystalline with hexagonal wurtzite structure and high orientation along c-axis direction. The grain size was in the range of 42–60 nm increased with sol aging time also the thickness increased from 70 to 147 nm with the aging time increment. The roughness of ZnO film investigated by atomic force microscope showed that roughness of the films increased then decreased with the increment of the aging time. The deposited films are highly transparent with an average transmission exceeding 82–95% in the visible range (400–800 nm), which slightly improved with aging time. The measured optical band gap values of the ZnO films were between 3.1 eV and 3.6 eV. The photoluminescence intensity increased with the aging time and the ZnO films have ultraviolet, violet and green emission.

  19. Structural, morphological, gas sensing and photocatalytic characterization of MoO3 and WO3 thin films prepared by the thermal vacuum evaporation technique

    Science.gov (United States)

    Arfaoui, A.; Touihri, S.; Mhamdi, A.; Labidi, A.; Manoubi, T.

    2015-12-01

    Thin films of molybdenum trioxide and tungsten trioxide were deposited on glass substrates using a simplified thermal evaporation under vacuum method monitored by heat treatment in flowing oxygen at 500 °C for 1 h. The structural and morphological properties of the films were investigated using X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy. The X-ray diffraction analysis shows that the films of MoO3 and WO3 were well crystallized in orthorhombic and monoclinic phase respectively with the crystallites preferentially oriented toward (2 0 0) direction parallel a-axis for both samples. In literature, we have shown in previous papers that structural and surface morphology of metal thin films play an important role in the gas detection mechanism. In this article, we have studied the response evolution of MoO3 and WO3 thin films sensors ethanol versus time, working temperature and the concentration of the ethanol. It was found that these films had high sensitivity to ethanol, which made them as a good candidate for the ethanol sensor. Finally, the photocatalytic activity of the samples was evaluated with respect to the degradation reaction of a wastewater containing methylene blue (MB) under UV-visible light irradiation. The molybdenum trioxide exhibits a higher degradation rate than the tungsten trioxide thin films under similar experimental conditions.

  20. Thin film preparation of semiconducting iron pyrite

    Science.gov (United States)

    Smestad, Greg P.; Ennaoui, Ahmed; Fiechter, Sebastian; Hofmann, Wolfgang; Tributsch, Helmut; Kautek, Wolfgang

    1990-08-01

    Pyrite (Fe52) has been investigated as a promising new absorber material for thin film solar cell applications because of its high optical absorption coefficient of 1OL cm1, and its bandgap of 0.9 to 1.0 eV. Thin layers have been prepared by Metal Organic Chemical Vapor Deposition, MOCVD, Chemical Spray Pyrolysis, CSP, Chemical Vapor Transport, CVT, and Sulfurization of Iron Oxide films, 510. It is postulated that for the material FeS2, if x is not zero, a high point defect concentration results from replacing 2 dipoles by single S atoms. This causes the observed photovoltages and solar conversion efficiencies to be lower than expected. Using the Fe-O-S ternary phase diagram and the related activity plots, a thermodynamic understanding is formulated for the resulting composition of each of these types of films. It is found that by operating in the oxide portion of the phase diagram, the resulting oxidation state favors pyrite formation over FeS. By proper orientation of the grains relative to the film surface, and by control of pinholes and stoichiometry, an efficient thin film photovolatic solar cell material could be achieved.

  1. Structure and electrical properties of (La, Zn) Co-doped BiFeO3 thin films prepared by using chemical solution deposition

    Science.gov (United States)

    Kim, Y. J.; Kim, H. J.; Kim, J. W.; Raghavan, C. M.; Kim, S. S.

    2012-08-01

    We prepared pure BiFeO3 (BFO) and (Bi0.9La0.1)(Fe0.975Zn0.025)O3- δ (BLFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BLFZO thin film. The leakage current density of the BLFZO thin film was four orders of magnitude lower than that of the pure BFO, 4.17 × 10-7 A/cm2 at 100 kV/cm. The remnant polarization (2 P r ) and the coercive electric field (2 E c ) of the BLFZO thin film were 97 µC/cm2 and 903 kV/cm at an applied electric field of 972 kV/cm and at a frequency of 1 kHz, and the values decreased with increasing measurement frequency to 63 µC/cm2 and 679 kV/cm at 10 kHz, respectively. Also, after 1.44 × 1010 cycles, a better fatigue endurance was observed in the BLFZO thin film, which was 90% of its initial value. We also confirmed that the remnant polarization (2 P r ) and the coercive electric field (2 E c ) were fairly saturated above a measurement frequency of 15 kHz for the BLFZO thin film.

  2. Electrochemical preparation of hematite nanostructured films for solar hydrogen production

    Directory of Open Access Journals (Sweden)

    Ebadzadeh T.

    2012-10-01

    Full Text Available Photoelectrochemical water splitting is a clean and promising technique for using a renewable source of energy, i.e., solar energy, to produce hydrogen. In this work electrochemical formation of iron oxyhydroxide and its conversion to hematite (α- Fe2O3 through thermal treatment have been studied. Oxyhydroxide iron compounds have been prepared onto SnO2/F covered glass substrate by potential cycling with two different potential sweep rate values; then calcined at 520 °C in air to obtain α-Fe2O3 nanostrutured films for their implementation as photoanode in a photoelectrochemical cell. X-ray diffraction analysis allowed finding that iron oxides films have nanocrystalline character. Scanning electron microscopy revealed that films have nanostructured morphology. The obtained results are discussed considering the influence of potential sweep rate employed during the preparation of iron oxyhydroxide film on optical, structural and morphological properties of hematite nanostructured films. Results show that films have acceptable characteristics as photoanode in a photoelectrochemical cell for hydrogen generation from water.

  3. The Analysis Of Structure For The Multi-Layered Of Ge/TiO2 Films Prepared By The Differential Prressure Co-Sputtering

    Directory of Open Access Journals (Sweden)

    Adachi Y.

    2015-06-01

    Full Text Available We tried to fabricate the Ge/TiO2 composite films with the differential pressure (pumping co-sputtering (DPCS apparatus in order to improve the optical properties. In the study, the micro structure of these thin films has been evaluated. TEM image revealed that the thin film was alternately layered with TiO2 and Ge, lattice fringes were observed both of Ge layer and TiO2 layer. There were portions that lattice fringe of Ge was disturbed near the interface of Ge and TiO2. X-ray photoelectron spectroscopy elucidated that there were few germanium oxides and a part with the thin film after annealed.

  4. Investigation of nano-structured Zirconium oxide film on Ti6Al4V substrate to improve tribological properties prepared by PIII&D

    Energy Technology Data Exchange (ETDEWEB)

    Saleem, Sehrish [Department of Physics, Government College University, Lahore 54000 (Pakistan); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Ahmad, R., E-mail: ahriaz@gcu.edu.pk [Department of Physics, Government College University, Lahore 54000 (Pakistan); Centre for Advanced Studies in Physics (CASP), Government College University, Lahore 54000 (Pakistan); Ayub, R. [Centre for Advanced Studies in Physics (CASP), Government College University, Lahore 54000 (Pakistan); Ikhlaq, Uzma [Department of Physics, Government College University, Lahore 54000 (Pakistan); Jin, Weihong; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)

    2017-02-01

    Highlights: • ZrO{sub 2} film was deposited on Ti6Al4V alloy using the plasma immersion ion implantation and deposition at various bias voltage. • The deposited film was characterized by XPS, AFM, Ellipometry, Nano-indentation and Pin-on disk machine. • A dense zirconium oxide film with the maximum thickness 108 nm was formed at maximum applied voltage. • The hardness and wear resistance of film is much higher as compared to the substrate. - Abstract: Plasma immersion ion implantation and deposition (PIII&D) is the most attractive and efficient technique used in the medical field to tailor materials for biomedical applications. In the present study zirconium oxide nano-structured thin films were deposited on surface of Ti6Al4V alloy for bias voltages of 15, 20 and 25 kV. The chemical composition, surface roughness and thickness of deposited films were characterized by the x-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometry respectively. The XPS results confirm the formation of a dense zirconium oxide film of the treated specimens. AFM results exhibit a smooth film with maximum roughness of about 8.4 nm is formed. The thickness of the film is increased with the increase in bias voltages and is maximum at 25 kV. The effect of bias voltages on wear characteristics was further investigated by pin-on-disk test. It is observed that the friction coefficient is reduced, whereas wear resistance is enhanced and it is found to be maximum at 25 kV compared to the other bias voltages. Nanohardness is improved up to twice compared to untreated specimen at the maximum bias voltage. Therefore, it is concluded that deposition of zirconium oxide using the PIII&D is produced a dense layer on the substrate surface, which can be used as a promising candidate for the improved tribological properties of Ti6Al4V.

  5. The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO 2 transparent semiconducting films prepared by spray pyrolysis technique

    Science.gov (United States)

    Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

    2010-10-01

    The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2:Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

  6. The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO2 transparent semiconducting films prepared by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

    2010-01-01

    The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2 :Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2 :Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

  7. Structural, optical and electrical properties of Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films prepared by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Khadka, Dhruba B.; Kim, JunHo, E-mail: jhk@inu.ac.kr

    2015-07-25

    Highlights: • CFTS(Se) thin films have been synthesized by low-cost spray-based deposition. • The fabricated films were found to be of stannite structure and p-type conductivity. • Band gaps of CFTS and CFTSe thin films are 1.37 and 1.11 eV, respectively. - Abstract: We report on fabrication of polycrystalline Cu{sub 2}FeSnX{sub 4} (X = S, Se) thin films by chemical spray pyrolysis subsequent with post-sulfurization and selenization. The post-annealing of as-sprayed Cu{sub 2}FeSnS{sub 4} (CFTS) films in sulfur and selenium ambient demonstrated drastically improved surface texture as well as crystallinity. The crystal lattice parameters calculated from X-ray diffraction patterns for post-annealed films were found to be consistent with stannite structure. The fabricated Cu{sub 2}FeSnS{sub 4} (CFTS) and Cu{sub 2}FeSnSe{sub 4} (CFTSe) films showed p-type conductivity with carrier concentration in the range of 10{sup 21} cm{sup −3} and mobility ∼1–5 cm{sup 2} V{sup −1} s{sup −1}. The band gap energies of post-sulfurized CFTS and post-selenized CFTSe films were estimated to be ∼1.37 eV and ∼1.11 eV with an error of ±0.02 eV by UV–Vis absorption, respectively, which are promising for photovoltaic application.

  8. Indium tin oxide films prepared via wet chemical route

    International Nuclear Information System (INIS)

    Legnani, C.; Lima, S.A.M.; Oliveira, H.H.S.; Quirino, W.G.; Machado, R.; Santos, R.M.B.; Davolos, M.R.; Achete, C.A.; Cremona, M.

    2007-01-01

    In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an α-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 deg. C. A 10 at.% of doping of Sn 4+ ions into an In 2 O 3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10 -3 Ω cm, 2.9 cm 2 /V s and - 3.5 x 10 20 /cm 3 , respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained

  9. Effect of Mn doping on the structural and optical properties of ZrO2 thin films prepared by sol–gel method

    International Nuclear Information System (INIS)

    Berlin, I. John; Lekshmy, S. Sujatha; Ganesan, V.; Thomas, P.V.; Joy, K.

    2014-01-01

    Homogeneous and transparent Mn doped ZrO 2 thin films were prepared by sol–gel dip coating method. The films were annealed in air atmosphere at 500 °C. The X-ray diffraction pattern of the undoped ZrO 2 thin film revealed a mixed phase of tetragonal and monoclinic ZrO 2 with preferred orientations along T(111) and M(− 111). Grazing Incidence X-ray Diffraction of Mn doped ZrO 2 thin films reveals the introduction of Mn interstitial in ZrO 2 which stabilize the mixed phase of ZrO 2 into tetragonal phase. Atomic force microscope image shows the addition of catalyst (Mn) which stops isotropic agglomeration of particles, instead of anisotropic agglomeration that occurred resulting in growth of particles in certain direction. Average transmittances of > 70% (in UV–vis region) were observed for all samples. The optical band gap decreased from 5.72 to 4.52 eV with increase in Mn doping concentration. The reduced band gap is due to the introduction of impurity levels in the band gap, by incorporation of the metal ions into the ZrO 2 lattice. The d-electron of Mn (t 2g level) can easily overlap with the ZrO 2 's valence band (VB) because t 2g of Mn is very close to VB of ZrO 2 . This overlap caused a wide VB and consequently decreases the band gap of ZrO 2 . The photoluminescence (PL) spectrum of undoped zirconia thin film exhibits an intense near band edge emission peak at 392.5 nm (3.15 eV) and weak emission peaks at 304 (4.07 eV), 604 nm (2.05 eV) and 766 nm (1.61 eV). Additional PL peaks were observed for Mn doped ZrO 2 located at around 420, 447 (blue), 483 (blue) and 529 (green) nm respectively. These peaks were due to the redox properties of various valence state of Mn in ZrO 2 . The prepared Mn doped ZrO 2 thin films can be applied in optical devices. - Highlights: • Mn-doped ZrO 2 thin films were prepared by sol–gel dip coating method. • Introduction of Mn interstitial in ZrO 2 stabilizes ZrO 2 into tetragonal phase. • The optical band gap

  10. A comparative study of thermal annealing effects under various atmospheres on nano-structured CdS thin films prepared by CBD

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingjun; Li, Jianmin; Chen, Guilin; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn

    2013-10-05

    Highlights: •Smooth and uniform CdS thin films were deposited successfully by CBD method. •The influence of CdCl{sub 2}-assisted annealing under various atmospheres of CdS films has been investigated. •We gave a more detailed research on annealing temperature after identified the most optimal annealing method. •High quality CdS films were obtained with air–CdCl{sub 2}-assisted treatments at 400 °C for 0.5 h. •GIXRD was used as a new analysis method of CdS in this paper. -- Abstract: Cadmium sulfide (CdS) nanofilms have been deposited on the glass substrate using the chemical bath technique. The effects of CdCl{sub 2}-assisted annealing under different atmosphere (vacuum, Ar and air) on the structural, morphological and optical properties of CdS nanofilms have been studied. After identifying the optimal annealing atmosphere, we also investigated the CdS thin film annealed at different annealing temperature (300, 400 and 500 °C). Films have been characterized by GI-XRD analysis, scanning electron microscopy, and UV–Vis–NIR spectrophotometer. The as-deposited CdS films have been found to be nanocrystalline in nature with a mixture of two crystallographic phases: a hexagonal phase and a cubic phase. After annealed in air with a CdCl{sub 2} coating layer at 400 °C, the films showed pure hexagonal phase, indicating the phase transition of CdS. It was found that the treatment in air with a CdCl{sub 2} coating layer increased the crystallinity and the mean grain size of CdS film, which are advantageous to the application in solar cells as a window layer material.

  11. Structural and electrical properties of Nb doped TiO{sub 2} films prepared by the sol–gel layer-by-layer technique

    Energy Technology Data Exchange (ETDEWEB)

    Duta, M., E-mail: mduta@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Simeonov, S. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria); Teodorescu, V. [National Institute of Material Physics, 105 bis Atomistilor Street, 077125 Bucharest, Magurele (Romania); Predoana, L.; Preda, S.; Nicolescu, M.; Marin, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Spasov, D. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria); Gartner, M.; Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Szekeres, A. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia (Bulgaria)

    2016-02-15

    Highlights: • TiO{sub 2}:Nb (1.2 at.%) multilayer films were deposited by sol–gel method on glass and Si. • 5 and 10 layers TiO{sub 2}:Nb films crystallize only in the anatase phase. • E{sub g} values are within 3.24–3.32 eV showing a decrease with increasing the layer number. • The specific resistivity, effective donor and sheet energy densities were obtained. • Nb donor compensation by acceptor levels in TiO{sub 2}:Nb film was suggested. - Abstract: Thin films of 5 and 10-layered sol–gel TiO{sub 2} were doped with 1.2 at.% Nb and their structural, optical and electrical properties were investigated. The films crystallized only in anatase phase, as evidenced by X-ray diffraction and selected area electron diffraction analyses. High resolution transmission electron microscopy revealed nanosized crystallites with amorphous boundaries. Current-voltage measurements on metal-TiO{sub 2}–Si structures showed the formation of n{sup +}–n heterojunction at the TiO{sub 2}–Si interface with a rectification ratio of 10{sup 4}. The effective donor density varies between 10{sup 16} and 10{sup 17} cm{sup −3}, depending on film thickness. The sheet energy densities under forward and reverse bias are in the order of 10{sup 12} and 10{sup 10} cm{sup −2} eV{sup −1}, respectively. These values and the high specific resistivity (10{sup 4} Ω cm) support the existence of compensating acceptor levels in these films. It was established that the conduction mechanism is based on space charge limited current via deep levels with different energy positions in the band gap.

  12. Preparation and Characteristics of Biodegradable Polyurethane/Clay Nanocomposite Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong Woo [Kyonggi University, Suwon (Korea, Republic of)

    2013-06-15

    Biodegradable polyurethane (PU)/clay nanocomposite films were prepared via extrusion compounding process followed by casting film process. Organically modified montmorillonite (denoted as C30B) with a large amount of hydroxyl groups on its surface was used for the formation of strong bonding with PU resin. From both XRD analysis and TEM observations, the intercalated and exfoliated structure, and dispersion state of silicate platelets in the compounded nanocomposite films were confirmed. In addition, the rheological and tensile properties, optical transparency, oxygen permeability of the prepared nanocomposites were investigated as a function of added nanoclay content, and moreover based on these results, the correlation between the morphology and the resulting properties of the nanocomposites could be presented. The inclusion of nanoclays at appropriate content resulted in remarkable improvement in the nanocomposite performance including tensile modulus, elongation, transparency, and oxygen barrier property, however at excess amount of nanoclays, reduction or very slight increase was observed due to poor dispersion. The biodegradability of the prepared nanocomposite film was evaluated by examining the deterioration in the barrier and tensile properties during degradation period under compost.

  13. Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

    International Nuclear Information System (INIS)

    Terasako, Tomoaki; Nomoto, Junichi; Makino, Hisao; Yamamoto, Naoki; Shirakata, Sho; Yamamoto, Tetsuya

    2015-01-01

    Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (F O2 ) introduced into the chamber during the deposition process and the Ga 2 O 3 content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in F O2 or the increase in Ga 2 O 3 content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (Ga Zn s) together with the generation of n-type intrinsic defects or complex defects. - Highlights: • Films of Ga-doped ZnO (GZO) films were deposited by ion-plating with a DC arc discharge. • Structural properties of GZO films were examined by X-ray diffraction measurements. • GZO films had the residual compressive stress along the a-axis direction. • There was the correlation between the carrier concentration and the cell volume.

  14. Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge

    Energy Technology Data Exchange (ETDEWEB)

    Terasako, Tomoaki, E-mail: terasako.tomoaki.mz@ehime-u.ac.jp [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Nomoto, Junichi; Makino, Hisao; Yamamoto, Naoki [Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan); Shirakata, Sho [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Yamamoto, Tetsuya [Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan)

    2015-12-01

    Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (F{sub O2}) introduced into the chamber during the deposition process and the Ga{sub 2}O{sub 3} content in the GZO sintered pellet. The X-ray diffraction (XRD) measurements revealed that the GZO films have the residual compressive stress along the a-axis direction (in-plane) and the tensile stress along the c-axis direction (out-of-plane). The increase in F{sub O2} or the increase in Ga{sub 2}O{sub 3} content was effective for relaxing the in-plane compressive stress induced by the so-called atomic peening effect. The positive correlation between the carrier concentration (n) and the primitive cell volume (V) would be due to the incorporation of Ga atoms substituting Zn sites (Ga{sub Zn}s) together with the generation of n-type intrinsic defects or complex defects. - Highlights: • Films of Ga-doped ZnO (GZO) films were deposited by ion-plating with a DC arc discharge. • Structural properties of GZO films were examined by X-ray diffraction measurements. • GZO films had the residual compressive stress along the a-axis direction. • There was the correlation between the carrier concentration and the cell volume.

  15. Preparation and characterization of sprayed FTO thin films

    Science.gov (United States)

    Abd-Lefdil, M.; Diaz, R.; Bihri, H.; Aouaj, M. Ait; Rueda, F.

    2007-06-01

    Fluorine doped tin oxide (FTO) thin films have been prepared by spray pyrolysis technique with no further annealing. Films with 2.5% of fluorine grown at 400 °C present a single phase and exhibit a tetragonal structure with lattice parameters a = 4.687 Å and c = 3.160 Å. Scanning electron micrographs showed homogeneous surfaces with average grain size around 190 nm. The films are transparent in the visible zone and exhibit a high reflectance in the near infrared region. The best electrical resistivity was 6.3 × 10-4 Ω cm for FTO with 2.5% of fluorine. The ratio of transmittance in the visible to the sheet resistance are in the 0.57 × 10-2 1.96 × 10-2 {Ω }-1 range.

  16. Magnetooptical garnet films: preparation, characterisation, application

    International Nuclear Information System (INIS)

    Goernert, P.; Lorenz, A.; Lindner, M.; Richert, H.

    2007-01-01

    Full text: In contemporary magnetooptics both Kerr effect and Faraday effect are applied. The Kerr effect of metals and alloys - such as Fe, Ni, Co, FePt, CoPt, MnBi, PtMnSb - with thicknesses 300 μm are established as commercial isolators in optical systems and for developments of waveguide applications. Bi-REIG is prepared mostly by conventional liquid phase epitaxy (LPE) in PbO-B 2 O 3 -Bi 2 O 3 based solvents and sometimes by laser ablation and as nanocrystalline powders. In each case high Faraday rotation and low optical absorption is necessary. Additionally, magnetooptical sensors should possess high sensitivity and a large dynamic range. All these demands can be fulfilled with (REBi) 3 (FeGaAl) 5 O 12 LPE layers. Here we discuss some new results concerning preparation, characterisation, and application of Bi-TmIG and Bi-DyIG LPE layers on high-quality gadolinium gallium garnet (GGG) or lattice matched Ca-, Mg-, Zr-substituted GGG substrates. Optimization of flux melt composition and under cooling result in sensor films with a Faraday rotation of e.g. -1.2 0 /μm at a wavelength of l=590 nm and saturation induction of Bs=70 mT. Such films are already applied for forensic investigations. However, the responsivity of the garnet films is restricted by their coercivity Hc. Surface defects are found to give rise to pinned magnetic domains correlated with typical hysteresis. Obviously, Hc and the formation of pits are due to misfit stress and substrate surface quality. Besides, it is shown that an increase of working temperature leads to smaller coercivities. (authors)

  17. Imaging of fullerene-like structures in CNx thin films by electron microscopy; sample preparation artefacts due to ion-beam milling

    International Nuclear Information System (INIS)

    Czigany, Zs.; Neidhardt, J.; Brunell, I.F.; Hultman, L.

    2003-01-01

    The microstructure of CN x thin films, deposited by reactive magnetron sputtering, was investigated by transmission electron microscopy (TEM) at 200 kV in plan-view and cross-sectional samples. Imaging artefacts arise in high-resolution TEM due to overlap of nm-sized fullerene-like features for specimen thickness above 5 nm. The thinnest and apparently artefact-free areas were obtained at the fracture edges of plan-view specimens floated-off from NaCl substrates. Cross-sectional samples were prepared by ion-beam milling at low energy to minimize sample preparation artefacts. The depth of the ion-bombardment-induced surface amorphization was determined by TEM cross sections of ion-milled fullerene-like CN x surfaces. The thickness of the damaged surface layer at 5 deg. grazing incidence was 13 and 10 nm at 3 and 0.8 keV, respectively, which is approximately three times larger than that observed on Si prepared under the same conditions. The shallowest damage depth, observed for 0.25 keV, was less than 1 nm. Chemical changes due to N loss and graphitization were also observed by X-ray photoelectron spectroscopy. As a consequence of chemical effects, sputtering rates of CN x films were similar to that of Si, which enables relatively fast ion-milling procedure compared to carbon compounds. No electron beam damage of fullerene-like CN x was observed at 200 kV

  18. Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

    Science.gov (United States)

    Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

    2010-02-01

    Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

  19. Influences of the iron ion (Fe3+)-doping on structural and optical properties of nanocrystalline TiO2 thin films prepared by sol-gel spin coating

    International Nuclear Information System (INIS)

    Ben Naceur, J.; Mechiakh, R.; Bousbih, F.; Chtourou, R.

    2011-01-01

    Titanium dioxide (TiO 2 ) thin films doping of various iron ion (Fe 3+ ) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 deg. C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO 2 thin films comprised only the anatase TiO 2 , but the crystallinity decreased when the Fe 3+ content increased from 0% to 20%. During the Fe 3+ addition to 20%, the phase of TiO 2 thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E g ) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe 3+ content.

  20. Effect of the hydrogen flow rate on the structural and optical properties of hydrogenated amorphous silicon thin films prepared by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ben Amor, Sana; Dimassi, Wissem; Ali Tebai, Mohamed; Ezzaouia, Hatem [Photovoltaic Laboratory Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by plasma enhanced chemical vapor deposition (PECVD) method at low temperature (400 C) using high rf power (60 W). The structural and optical properties of these films are systematically investigated as a function of the flow rate of hydrogen (F{sub H2}).The surface morphology is analyzed by atomic force microscopy (AFM). The characterization of these films with low angle X-ray diffraction revealed that the crystallite size in the films tends to decrease with increase in (F{sub H2}). The Fourier transform infrared (FTIR) spectroscopic analysis showed that at low values of (F{sub H2}),the hydrogen bonding in Si:H films shifts from di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2})n complexes to the mono-hydrogen (Si-H) bonding configuration. Finally, for these optimized conditions, the deposition rate decreases with increasing (F{sub H2}). (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  2. Superconducting Electronic Film Structures

    Science.gov (United States)

    1991-02-14

    Segmuller, A., Cooper, E.I., Chisholm, M.F., Gupta, A. Shinde, S., and Laibowitz, R.B. Lanthanum gallate substrates for epitaxial high-T superconducting thin...M. F. Chisholm, A. Gupta, S. Shinde, and R. B. Laibowitz, " Lanthanum Gallate Substrates for Epitaxial High-T c Superconducting Thin Films," Appl...G. Forrester and J. Talvacchio, " Lanthanum Copper Oxide Buffer Layers for Growth of High-T c Superconductor Films," Disclosure No. RDS 90-065, filed

  3. Surface Properties of a Novel Poly(vinyl alcohol Film Prepared by Heterogeneous Saponification of Poly(vinyl acetate Film

    Directory of Open Access Journals (Sweden)

    Seong Baek Yang

    2017-10-01

    Full Text Available Almost general poly(vinyl alcohol (PVA films were prepared by the processing of a PVA solution. For the first time, a novel poly(vinyl alcohol (PVA film was prepared by the saponification of a poly(vinyl acetate (PVAc film in a heterogenous medium. Under the same saponification conditions, the influence of saponification time on the degree of saponification (DS was studied for the preparation of the saponified PVA film, and it was found that the DS varied with time. Optical microscopy was used to confirm the characteristics and surface morphology of the saponified PVA film, revealing unusual black globules in the film structure. The contact angle of the films was measured to study the surface properties, and the results showed that the saponified PVA film had a higher contact angle than the general PVA film. To confirm the transformation of the PVAc film to the PVA film, 1H nuclear magnetic resonance spectroscopy, X-ray diffraction measurements, differential scanning calorimetry, and Fourier-transform infrared spectroscopy were employed.

  4. Preparation and Properties of Silver Nanowire-Based Transparent Conductive Composite Films

    Science.gov (United States)

    Tian, Ji-Li; Zhang, Hua-Yu; Wang, Hai-Jun

    2016-06-01

    Silver nanowire-based transparent conductive composite films with different structures were successfully prepared using various methods, including liquid polyol, magnetron sputtering and spin coating. The experimental results revealed that the optical transmittance of all different structural composite films decreased slightly (1-3%) compared to pure films. However, the electrical conductivity of all composite films had a great improvement. Under the condition that the optical transmittance was greater than 78% over the wavelength range of 400-800 nm, the AgNW/PVA/AgNW film became a conductor, while the AZO/AgNW/AZO film and the ITO/AgNW/ITO film showed 88.9% and 94% reductions, respectively, for the sheet resistance compared with pure films. In addition, applying a suitable mechanical pressure can improve the conductivity of AgNW-based composite films.

  5. Preparation and thermomechanical properties of Ag-PVA nanocomposite films

    International Nuclear Information System (INIS)

    Gautam, Anurag; Ram, S.

    2010-01-01

    Metal-polymer hybrid nanocomposites have been prepared from an aqueous solution of polyvinyl alcohol (PVA) and silver nitrate (AgNO 3 ). The silver nanoparticles were generated in PVA matrix by the reduction of silver ions with PVA molecule at 60-70 deg. C over magnetic stirrer. UV-vis analysis, X-ray diffraction studies, transmission electron microscopy, scanning electron microscopy and current-voltage analysis were used to characterize the nanocomposite films prepared. The X-ray diffraction analysis reveals that silver metal is present in face centered cubic (fcc) crystal structure. Average crystallite size of silver nanocrystal is 19 nm, which increases to 22 nm on annealing the film at 150 deg. C in air. This result is in good agreement with the result obtained from TEM. The UV-vis spectrum shows a single peak at 433 nm, arising from the surface plasmon absorption of silver nanocolloids. This result clearly indicates that silver nanoparticles are embedded in PVA. An improvement of mechanical properties (storage modulus) was also noticed due to a modification of PVA up to 0.5 wt% of silver content. The current-voltage (I-V) characteristic of nanocomposite films shows increase in current drawn with increasing Ag-content in the films.

  6. Structural and electrical properties of ZnO/Zn0.85Mg0.15O thin film prepared by pulsed laser deposition

    Science.gov (United States)

    Yang, Jing-Jing; Wang, Gang; Du, Wen-Han; Xiong, Chao

    2017-07-01

    The electrical transport properties are the key factors to determine the performance of ZnO-based quantum effect device. ZnMgO is a typical material to regulate the band of ZnO. In order to investigate the electrical properties of the interface of ZnO/Zn0.85Mg0.15O films, three kinds of ZnO/Zn0.85Mg0.15O films have been fabricated with different thickness. After comparing the structural and electrical properties of the samples, we found that the independent Zn0.85Mg0.15O hexagonal wurtzite structure (002) peak can be detected in XRD spectra. Hall-effect test data confirmed that the two-dimensional electron gas (2DEG) became lower because of the decrease of thickness of Zn0.85Mg0.15O films, increase of impurity scattering and lattice structure distortion caused by the increase of Mg content.

  7. Effect of Perovskite Film Preparation on Performance of Solar Cells

    Directory of Open Access Journals (Sweden)

    Yaxian Pei

    2016-01-01

    Full Text Available For the perovskite solar cells (PSCs, the performance of the PSCs has become the focus of the research by improving the crystallization and morphology of the perovskite absorption layer. In this thesis, based on the structure of mesoporous perovskite solar cells (MPSCs, we designed the experiments to improve the photovoltaic performance of the PSCs by improved processing technique, which mainly includes the following two aspects. Before spin-coating PbI2 solution, we control the substrate temperature to modify the crystal quality and morphology of perovskite films. On the other hand, before annealing, we keep PbI2 films for the different drying time at room temperature to optimize films morphology. In our trials, it was found that the substrate temperature is more important in determining the photovoltaic performance than drying time. These results indicate that the crystallization and morphology of perovskite films affect the absorption intensity and obviously influence the short circuit current density of MPSCs. Utilizing films prepared by mentioning two methods, MPSCs with maximum power conversion efficiency of over 4% were fabricated for the active area of 0.5 × 0.5 cm2.

  8. Tailoring electronic structure of polyazomethines thin films

    OpenAIRE

    J. Weszka; B. Hajduk; M. Domański; M. Chwastek; J. Jurusik; B. Jarząbek; H. Bednarski; P. Jarka

    2010-01-01

    Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD) can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic ...

  9. Electrochemical and Thermal Studies of Prepared Conducting Chitosan Biopolymer Film

    International Nuclear Information System (INIS)

    Hlaing Hlaing Oo; Kyaw Naing; Kyaw Myo Naing; Tin Tin Aye; Nyunt Wynn

    2005-09-01

    In this paper, chitosan based conducting bipolymer films were prepared by casting and solvent evaporating technique. All prepared chitosan films were of pale yellow colour, transparent, and smooth. Sulphuric acid was chosen as the cross-linking agent. It enhanced conduction pathway in cross-linked chitosan films. Mechanical properties, solid-state, and thermal behavior of prepared chitosan fimls were studied by means of a material testing machine, powder X-ray diffractometry (XRD), thermogravimetric analysis (TG-DTG), and differential scanning calorimetry (DSC). By the XRD diffraction pattern, high molecular weight of chitosan product indicates the semi-crystalline nature, but the prepared chitosan film and doped chitosan film indicate significantly lower in crystallinity prove which of the amorphous characteristics. In addition, DSC thermogram of pure chitosan film exhibited exothermic peak around at 300 C, indicating polymer decomposition of chitosan molecules in chitosan films. Furthermore, these DSC thermograms clearly showed that while pure chitosan film display exothermal decomposition, the doped chitosan films mainly endothermic characteristics. The ionic conductivity of doped chitosan films were in the order of 10 to 10 S cm , which is in the range of semi-conductor. These results showed that cross-linked chitoson films may be used as polymer electrolyte film to fabricate solid state electrochemical cells

  10. Preparation of self-supporting thin metal target films

    International Nuclear Information System (INIS)

    Wang Xiuying; Ge Suxian; Yin Jianhua; Yin Xu; Jin Genming

    1989-01-01

    The preparation method and equipment for thin metal self-supporting target without oil contamination are described. The influence of target films contaminated by oil vapor on accuracy of nuclear-physics experimental data are also discussed. The analytical results on carbon content in the prepared films of three elements show that the equipment is very effective for eliminating contamination

  11. Preparation, characterization and optical properties of Gadolinium doped ceria thin films by pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Nagaraju, P.; Vijaya Kumar, Y.; Vishnuvardhan Reddy, C.; Ramana Reddy, M.V.; Phase, D.M; Raghavendra Reddy, V.

    2013-01-01

    The growth of Gadolinium doped ceria thin films with controlled surface structure for device quality applications presents a significant problem for experimental investigation. In the present study gadolinium doped cerium oxide thin films were prepared by pulsed laser deposition (PLD) and were studied for their surface structure evaluation in relation to the optimized operating conditions during the stage of film preparation. The deposition was made with gadolinium concentration of 10 mole% to ceria pellets. The films were deposited on quartz substrate in the presence of oxygen partial pressure of 1.5 x 10 -3 torr using KrF Excimer laser with laser energy 220 mJ at a substrate temperature 700℃. The effect of annealing temperature on 10 mole% GDC thin film was investigated. The film thickness was measured by using AMBIOS make XP-l stylus profiler. As prepared and annealed thin films were characterized for crystallinity, particle size and orientation by using G.I.XRD. The films were characterized using atomic force microscopy (AFM). The AFM results gave a consistent picture of the evolution of GDC film surface morphologies and microstructures in terms of surface roughness, grain distribution and mean grain size. The optical transmittance spectra was used to determine the optical constants such as optical band gap, refractive index, extinction coefficient of as prepared and annealed thin films. (author)

  12. Analysis of NdFeB thin films prepared by facing target sputtering

    International Nuclear Information System (INIS)

    Shivalingappa, L.; Mohan, S.; Ghantasala, M.K.; Sood, D.K.

    1999-01-01

    In this paper, we present the details of our work on the deposition and characterization of NdFeB thin films. These films were prepared using facing target sputtering technique. The silicon(100) substrates were maintained at a substrate temperature of 400 to 600 deg C during deposition. Film structure, composition and magnetic properties are analyzed using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD) techniques. Films deposited below 400 deg C were x-ray amorphous, while the onset of crystallinity was observed with the films deposited at 500 deg C. Typical film composition was Nd:Fe:B = 2.2:12.5:2. Film composition appear to be a function of deposition conditions. Oxygen has been found to be the main impurity in the films. Oxygen content in the film reduced as the substrate temperature is increased

  13. Preparation and adsorption properties of nano magnetite chitosan films for heavy metal ions from aqueous solution

    Energy Technology Data Exchange (ETDEWEB)

    Lasheen, M.R., E-mail: ragaei24@link.net [Water Pollution Research Department, Environmental Research Division, National Research Centre, 33-El Buhoth St., Dokki, Cairo, 12311 (Egypt); El-Sherif, Iman Y., E-mail: iman57us@yahoo.com [Water Pollution Research Department, Environmental Research Division, National Research Centre, 33-El Buhoth St., Dokki, Cairo, 12311 (Egypt); Tawfik, Magda E., E-mail: magdaemileta@yahoo.com [Polymers and Pigments Department, National Research Centre, 33-El Buhoth St., Dokki, Cairo, 12311 (Egypt); El-Wakeel, S.T., E-mail: shaimaa_tw@yahoo.com [Water Pollution Research Department, Environmental Research Division, National Research Centre, 33-El Buhoth St., Dokki, Cairo, 12311 (Egypt); El-Shahat, M.F., E-mail: elshahatmf@hotmail.com [Faculty of Science, Ain Shams University, Khalifa El-Maamon St., Abbasiya Sq., 11566, Cairo (Egypt)

    2016-08-15

    Highlights: • Nano magnetite–chitosan films were prepared by casting method. • The efficiency of the prepared films for removing heavy metals was investigated. • The adsorption mechanism was studied using different isotherm and kinetic models. • Films reuse and metals recovery were studied. - Abstract: Nano magnetite chitosan (NMag–CS) film was prepared and characterized with different analytical methods. X-ray diffraction (XRD) patterns confirmed the formation of a pure magnetite structure and NMag–CS nanocomposite. TEM image of the film, revealed the uniform dispersion of magnetite nanoparticles inside chitosan matrix. The adsorption properties of the prepared film for copper, lead, cadmium, chromium and nickel metal ions were evaluated. Different factors affecting the uptake behavior by the composite films such as time, initial pH and film dose were investigated. The adsorption equilibrium attained using 2 g/L of the film after 120 min of reaction. The equilibrium data were analyzed using Langmuir and Freundlich models. The adsorption kinetics followed the mechanism of the pseudo-second-order equation for all metals. The metals regenerated from films with an efficiency greater than 95% using 0.1 M ethylene diamine tetra acetic acid (EDTA) and films were successfully reused for adsorption.

  14. Lanthanoid titanate film structure deposited at different temperatures in vacuum

    International Nuclear Information System (INIS)

    Kushkov, V.D.; Zaslavskij, A.M.; Mel'nikov, A.V.; Zverlin, A.V.; Slivinskaya, A.Eh.

    1991-01-01

    Influence of deposition temperature on the structure of lanthanoid titanate films, prepared by the method of high-rate vacuum condensation. It is shown that formation of crystal structure, close to equilibrium samples, proceeds at 1100-1300 deg C deposition temperatures. Increase of temperature in this range promotes formation of films with higher degree of structural perfection. Amorphous films of lanthanoid titanates form at 200-1000 deg C. Deposition temperature shouldn't exceed 1400 deg C to prevent the formation of perovskite like phases in films

  15. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo

    1995-01-01

    Structural characteristics and electrooptical properties of Sn-doped In 2 O 3 (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO 2 wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author)

  16. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo [Tokyo Univ. (Japan). Inst. of Industrial Science

    1995-02-01

    Structural characteristics and electrooptical properties of Sn-doped In{sub 2}O{sub 3} (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO{sub 2} wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author).

  17. Preparation Nano-Structure Polytetrafluoroethylene (PTFE Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties

    Directory of Open Access Journals (Sweden)

    Jian Hao

    2018-05-01

    Full Text Available Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE functional film was coated on the cellulose insulation pressboard by radio frequency (RF magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM and X-ray diffraction (XRD present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer.

  18. Preparation and characterization of vanadium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

    2013-04-16

    The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

  19. Structures and electrical properties of Mn- and Co-doped lead-free ferroelectric K0.5Na0.5NbO3 films prepared by a chemical solution deposition method

    International Nuclear Information System (INIS)

    Wang, Lingyan; Ren, Wei; Goh, Phoi Chin; Yao, Kui; Shi, Peng; Wu, Xiaoqing; Yao, Xi

    2013-01-01

    The un-doped, 2 mol% Mn- and 2 mol% Co-doped K 0.5 Na 0.5 NbO 3 (KNN) films were prepared by a chemical solution deposition method. The crystalline phase and surface morphologies of KNN films hardly changed after Mn- and Co-doping. X-ray photoelectron spectrocopy analysis indicates that the introduction of both Mn and Co promoted the formation of KNN perovskite structure, and the most Mn 2+ and Co 2+ ions were oxidized into high-valence ions during thermal process. As a result, the leakage current density of the KNN films was decreased and the electrical properties were enhanced after the doping. - Highlights: • The leakage current density of K 0.5 Na 0.5 NbO 3 (KNN) films decreased after doping • The introduction of dopant promoted the formation of KNN perovskite structure • A portion of introduced doping ions became high-valent after heat-treatment

  20. Electrodeposited Fe-Co films prepared from a citric-acid-based plating bath

    OpenAIRE

    Yanai, Takeshi; Uto, H.; Shimokawa, Takaya; Nakano, Masaki; Fukunaga, Hirotoshi; Suzuki, K.

    2013-01-01

    Electrodeposited Fe-Co films are commonly prepared in a boric-acid-based bath. In this research, we applied citric acid instead of boric acid for the plating of Fe-Co films because boron in the waste bath is restricted by environmental-protection regulations in Japan. We evaluated the effect of citric acid on the magnetic and structural properties of the films. The saturation magnetization of the Fe-Co films slightly increased while the Fe content in the Fe-Co films decreased with increasing ...

  1. The nano-fractal structured tungsten oxides films with high thermal stability prepared by the deposition of size-selected W clusters

    Energy Technology Data Exchange (ETDEWEB)

    Park, Eun Ji; Kim, Young Dok [Sungkyunkwan University, Department of Chemistry, Suwon (Korea, Republic of); Dollinger, Andreas; Huether, Lukas; Blankenhorn, Moritz; Koehler, Kerstine; Gantefoer, Gerd [Konstanz University, Department of Physics, Constance (Germany); Seo, Hyun Ook [Sangmyung University, Department of Chemistry and Energy Engineering, Seoul (Korea, Republic of)

    2017-06-15

    Size-selected W{sub n}{sup -} clusters (n = 1650) were deposited on the highly ordered pyrolytic graphite surface at room temperature under high vacuum conditions by utilizing a magnetron sputtering source and a magnet sector field. Moreover, geometrical structure and surface chemical states of deposited clusters were analyzed by in situ scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy, respectively. The formation of 2-D islands (lateral size ∝150 nm) with multiple dendritic arms was observed by STM, and the structure of the individual W{sub 1650} clusters survived within the dendritic arms. To study the thermal stability of the nano-fractal structure under the atmospheric conditions, the sample was brought to the ambient air conditions and sequentially post-annealed at 200, 300, and 500 C in the air. The nano-fractal structure was maintained after the 1st post-annealing process at 200 C for 1 h in the air, and the subsequent 2nd post-annealing at 300 C (for 1 h, in the air) also did not induce any noticeable change in the topological structure of the sample. The topological changes were observed only after the further post-annealing at a higher temperature (at 500 C, 1 h) in the air. We show high potential use of these nano-structured films of tungsten oxides in ambient conditions. (orig.)

  2. Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

    Directory of Open Access Journals (Sweden)

    Takashi Sumiyama

    2017-05-01

    Full Text Available Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 – 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002 axis.

  3. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  4. Preparation of Surlyn films reinforced with cellulose nanofibres and feasibility of applying the transparent composite films for organic photovoltaic encapsulation

    Science.gov (United States)

    Lertngim, Anantaya; Phiriyawirut, Manisara; Wootthikanokkhan, Jatuphorn; Yuwawech, Kitti; Sangkhun, Weradesh; Kumnorkaew, Pisist; Muangnapoh, Tanyakorn

    2017-10-01

    This research concerns the development of Surlyn film reinforced with micro-/nanofibrillated celluloses (MFC) for use as an encapsulant in organic photovoltaic (OPV) cells. The aim of this work was to investigate the effects of fibre types and the mixing methods on the structure-properties of the composite films. Three types of cellulose micro/nanofibrils were prepared: the as-received MFC, the dispersed MFC and the esterified MFC. The fibres were mixed with Surlyn via an extrusion process, using two different mixing methods. It was found that the extent of fibre disintegration and tensile modulus of the composite films prepared by the master-batching process was superior to that of the composite system prepared by the direct mixing method. Using the esterified MFC as a reinforcement, compatibility between polymer and the fibre increased, accompanied with the improvement of the percentage elongation of the Surlyn composite film. The percentage of light transmittance of the Surlyn/MFC films was above 88, regardless of the fibre types and fibre concentrations. The water vapour transmission rate of the Surlyn/esterified MFC film was 65% lower than that of the neat Surlyn film. This contributed to the longer lifetime of the OPV encapsulated with the Surlyn/esterified MFC film.

  5. Preparation of mesoporous silica thin films by photocalcination method and their adsorption abilities for various proteins

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Katsuya, E-mail: katsuya-kato@aist.go.jp [National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Nakamura, Hitomi [National Institute of Advanced Industrial Science and Technology (AIST), 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Yamauchi, Yoshihiro; Nakanishi, Kazuma; Tomita, Masahiro [Department of Chemistry for Materials, Graduate School of Engineering, Mie University, 1577 Kurimamachiya-cho, Tsu, Mie 514-8570 (Japan)

    2014-07-01

    Mesoporous silica (MPS) thin film biosensor platforms were established. MPS thin films were prepared from tetraethoxysilane (TEOS) via using sol–gel and spin-coating methods using a poly-(ethylene oxide)-block-poly-(propylene oxide)-block-poly-(ethylene oxide) triblock polymer, such as P123 ((EO){sub 20}(PO){sub 70}(EO){sub 20}) or F127 ((EO){sub 106}(PO){sub 70}(EO){sub 106}), as the structure-directing agent. The MPS thin film prepared using P123 as the mesoporous template and treated via vacuum ultraviolet (VUV) irradiation to remove the triblock copolymer had a more uniform pore array than that of the corresponding film prepared via thermal treatment. Protein adsorption and enzyme-linked immunosorbent assay (ELISA) on the synthesized MPS thin films were also investigated. VUV-irradiated MPS thin films adsorbed a smaller quantity of protein A than the thermally treated films; however, the human immunoglobulin G (IgG) binding efficiency was higher on the former. In addition, protein A–IgG specific binding on MPS thin films was achieved without using a blocking reagent; i.e., nonspecific adsorption was inhibited by the uniform pore arrays of the films. Furthermore, VUV-irradiated MPS thin films exhibited high sensitivity for ELISA testing, and cytochrome c adsorbed on the MPS thin films exhibited high catalytic activity and recyclability. These results suggest that MPS thin films are attractive platforms for the development of novel biosensors. - Highlights: • VUV-treated MPS thin films with removed polymer had uniform pore. • VUV-treated MPS thin films exhibited high sensitivity by ELISA. • Cytochrome c showed the catalytic activity and recyclability on synthesized films.

  6. Preparation of mesoporous silica thin films by photocalcination method and their adsorption abilities for various proteins

    International Nuclear Information System (INIS)

    Kato, Katsuya; Nakamura, Hitomi; Yamauchi, Yoshihiro; Nakanishi, Kazuma; Tomita, Masahiro

    2014-01-01

    Mesoporous silica (MPS) thin film biosensor platforms were established. MPS thin films were prepared from tetraethoxysilane (TEOS) via using sol–gel and spin-coating methods using a poly-(ethylene oxide)-block-poly-(propylene oxide)-block-poly-(ethylene oxide) triblock polymer, such as P123 ((EO) 20 (PO) 70 (EO) 20 ) or F127 ((EO) 106 (PO) 70 (EO) 106 ), as the structure-directing agent. The MPS thin film prepared using P123 as the mesoporous template and treated via vacuum ultraviolet (VUV) irradiation to remove the triblock copolymer had a more uniform pore array than that of the corresponding film prepared via thermal treatment. Protein adsorption and enzyme-linked immunosorbent assay (ELISA) on the synthesized MPS thin films were also investigated. VUV-irradiated MPS thin films adsorbed a smaller quantity of protein A than the thermally treated films; however, the human immunoglobulin G (IgG) binding efficiency was higher on the former. In addition, protein A–IgG specific binding on MPS thin films was achieved without using a blocking reagent; i.e., nonspecific adsorption was inhibited by the uniform pore arrays of the films. Furthermore, VUV-irradiated MPS thin films exhibited high sensitivity for ELISA testing, and cytochrome c adsorbed on the MPS thin films exhibited high catalytic activity and recyclability. These results suggest that MPS thin films are attractive platforms for the development of novel biosensors. - Highlights: • VUV-treated MPS thin films with removed polymer had uniform pore. • VUV-treated MPS thin films exhibited high sensitivity by ELISA. • Cytochrome c showed the catalytic activity and recyclability on synthesized films

  7. Water-insoluble Silk Films with Silk I Structure

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Q.; Hu, X; Wang, X; Kluge, J; Lu, S; Cebe, P; Kaplan, D

    2010-01-01

    Water-insoluble regenerated silk materials are normally produced by increasing the {beta}-sheet content (silk II). In the present study water-insoluble silk films were prepared by controlling the very slow drying of Bombyx mori silk solutions, resulting in the formation of stable films with a predominant silk I instead of silk II structure. Wide angle X-ray scattering indicated that the silk films stabilized by slow drying were mainly composed of silk I rather than silk II, while water- and methanol-annealed silk films had a higher silk II content. The silk films prepared by slow drying had a globule-like structure at the core surrounded by nano-filaments. The core region was composed of silk I and silk II, surrounded by hydrophilic nano-filaments containing random turns and {alpha}-helix secondary structures. The insoluble silk films prepared by slow drying had unique thermal, mechanical and degradative properties. Differential scanning calorimetry results revealed that silk I crystals had stable thermal properties up to 250 C, without crystallization above the T{sub g}, but degraded at lower temperatures than silk II structure. Compared with water- and methanol-annealed films the films prepared by slow drying had better mechanical ductility and were more rapidly enzymatically degraded, reflecting the differences in secondary structure achieved via differences in post processing of the cast silk films. Importantly, the silk I structure, a key intermediate secondary structure for the formation of mechanically robust natural silk fibers, was successfully generated by the present approach of very slow drying, mimicking the natural process. The results also point to a new mode of generating new types of silk biomaterials with enhanced mechanical properties and increased degradation rates, while maintaining water insolubility, along with a low {beta}-sheet content.

  8. Preparation of Modified Films with Protein from Grouper Fish

    Science.gov (United States)

    Tecante, A.; Granados-Navarrete, S.; Martínez-García, C.

    2016-01-01

    A protein concentrate (PC) was obtained from Grouper fish skin and it was used to prepare films with different amounts of sorbitol and glycerol as plasticizers. The best performing films regarding resistance were then modified with various concentrations of CaCl2, CaSO4 (calcium salts), and glucono-δ-lactone (GDL) with the purpose of improving their mechanical and barrier properties. These films were characterized by determining their mechanical properties and permeability to water vapor and oxygen. Formulations with 5% (w/v) protein and 75% sorbitol and 4% (w/v) protein with a mixture of 15% glycerol and 15% sorbitol produced adequate films. Calcium salts and GDL increased the tensile fracture stress but reduced the fracture strain and decreased water vapor permeability compared with control films. The films prepared represent an attractive alternative for being used as food packaging materials. PMID:27597950

  9. Preparation of Modified Films with Protein from Grouper Fish

    Directory of Open Access Journals (Sweden)

    M. A. Valdivia-López

    2016-01-01

    Full Text Available A protein concentrate (PC was obtained from Grouper fish skin and it was used to prepare films with different amounts of sorbitol and glycerol as plasticizers. The best performing films regarding resistance were then modified with various concentrations of CaCl2, CaSO4 (calcium salts, and glucono-δ-lactone (GDL with the purpose of improving their mechanical and barrier properties. These films were characterized by determining their mechanical properties and permeability to water vapor and oxygen. Formulations with 5% (w/v protein and 75% sorbitol and 4% (w/v protein with a mixture of 15% glycerol and 15% sorbitol produced adequate films. Calcium salts and GDL increased the tensile fracture stress but reduced the fracture strain and decreased water vapor permeability compared with control films. The films prepared represent an attractive alternative for being used as food packaging materials.

  10. Structural properties and surface wettability of Cu-containing diamond-like carbon films prepared by a hybrid linear ion beam deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Peng; Sun, Lili; Li, Xiaowei [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Xu, Sheng [Gao Hong Coating Technology Co., Ltd, Huzhou 313000 (China); Ke, Peiling [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-06-01

    Cu-containing diamond-like carbon (Cu-DLC) films were deposited on Si/glass substrate by a hybrid ion beam deposition system. The Cu concentration (0.1–39.7 at.%) in the film was controlled by varying the sputtering current. The microstructure and composition of Cu-DLC films were investigated systematically. The surface topography, roughness and surface wettability of the films were also studied. Results indicated that with increasing the Cu concentration, the water contact angle of the films changed from 66.8° for pure carbon film to more than 104.4° for Cu-DLC films with Cu concentration larger than 24.4 at.%. In the hydrophilic region, the polar surface energy decreased from 30.54 mJ/m{sup 2} for pure carbon film to 2.48 mJ/m{sup 2} for the film with Cu 7.0 at.%. - Highlights: • Cu-containing diamond-like carbon (DLC) films were deposited by a hybrid ion beam system. • Cu-containing DLC films exhibited a wide range of water contact angle. • The water contact angles vary with the surface energies and surface roughness.

  11. Preparation and Evaluation of Buccal Bioadhesive Films Containing Clotrimazole

    OpenAIRE

    Singh, S.; Jain, S.; Muthu, M. S.; Tiwari, S.; Tilak, R.

    2008-01-01

    Buccal bioadhesive films, releasing topical drugs in the oral cavity at a slow and predetermined rate, provide distinct advantages over traditional dosage forms. The aim of present study was to prepare and evaluate buccal bioadhesive films of clotrimazole for oral candidiasis. The film was designed to release the drug at a concentration above the minimum inhibitory concentration for a prolonged period of time so as to reduce the frequency of administration of the available conventional dosage...

  12. STRUCTURING OF DIAMOND FILMS USING MICROSPHERE LITHOGRAPHY

    Directory of Open Access Journals (Sweden)

    Mária Domonkos

    2014-10-01

    Full Text Available In this study, the structuring of micro- and nanocrystalline diamond thin films is demonstrated. The structuring of the diamond films is performed using the technique of microsphere lithography followed by reactive ion etching. Specifically, this paper presents a four-step fabrication process: diamond deposition (microwave plasma assisted chemical vapor deposition, mask preparation (by the standard Langmuir-Blodgett method, mask modification and diamond etching. A self-assembled monolayer of monodisperse polystyrene (PS microspheres with close-packed ordering is used as the primary template. Then the PS microspheres and the diamond films are processed in capacitively coupled radiofrequency plasma  using different plasma chemistries. This fabrication method illustrates the preparation of large arrays of periodic and homogeneous hillock-like structures. The surface morphology of processed diamond films is characterized by scanning electron microscopy and atomic force microscope. The potential applications of such diamond structures in various fields of nanotechnology are also briefly discussed.

  13. Preparation of Nb thin films with bulk transition temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Peirce, L H [Florida State Univ., Tallahassee (USA). Dept. of Physics

    1984-08-01

    Thin films (1000-2000 A) of Nb were prepared with bulk transition temperatures (9.25 K) by evaporation from an electron gun. Necessary substrate temperatures, evaporation rates and H/sub 2/O pressures were determined.

  14. Nanocomposite film prepared by depositing xylan on cellulose nanowhiskers matrix

    Science.gov (United States)

    Qining Sun; Anurag Mandalika; Thomas Elder; Sandeep S. Nair; Xianzhi Meng; Fang Huang; Art J. Ragauskas

    2014-01-01

    Novel bionanocomposite films have been prepared by depositing xylan onto cellulose nanowhiskers through a pH adjustment. Analysis of strength properties, water vapour transmission, transparency, surface morphology and thermal decomposition showed the enhancement of film performance. This provides a new green route to the utilization of biomass for sustainable...

  15. Preparation of YBCO superconducting films by spray pyrolysis method

    International Nuclear Information System (INIS)

    Mora Alonso, M.; Leyva Fabelo, A.; Rubio Frias, E.; Pupo Gonzalez, I.; Lopez Sanchez, D.

    1994-01-01

    The methodology for the preparation of YBCO superconducting films on Zr 2O (Y) substrates by spray pyrolysis method is reported. The transition temperature of these films is superior than the boiling temperature of liquid 2N . Other critical parameters are similar to those reported by other authors using the same technique

  16. Influence of the Preparation Method, DC and RF Sputtering, on theProperties of Thin Film

    International Nuclear Information System (INIS)

    Tri-Mardji-Atmono; Widdi-Usada; Agus-Purwadi; Yunanto; Edi-Suharyadi

    2000-01-01

    The research on the influence of preparation method DC- and RF Sputteringon the properties of Fe-thin films has been done. The measurement with EDAXshows. that the Fe-content of RF-sputtered film increased with the increasingof self-bias voltage in the range of 850 - 1000 V. The observation ofmicrostructure using SEM shows a more homogeneity of thin film and smallergrain size with the increasing of the self-bias voltage. On the other hand,thin films with inhomogeneity of the structure were produced by DC-Sputteringprocess, indicated by the non continuity and the spread of theglow-discharge. Based on the investigation with X-ray diffraction, thin filmprepared by RF-Sputtering was amorphous, while the film produced by theDC-Sputtering is known as crystal structure. Preparation using DC-voltageshows continual sputtering-process at the voltage of 3000 V betweenelectrode. (author)

  17. Preparation and evaluation of buccal bioadhesive films containing clotrimazole.

    Science.gov (United States)

    Singh, S; Jain, S; Muthu, M S; Tiwari, S; Tilak, R

    2008-01-01

    Buccal bioadhesive films, releasing topical drugs in the oral cavity at a slow and predetermined rate, provide distinct advantages over traditional dosage forms. The aim of present study was to prepare and evaluate buccal bioadhesive films of clotrimazole for oral candidiasis. The film was designed to release the drug at a concentration above the minimum inhibitory concentration for a prolonged period of time so as to reduce the frequency of administration of the available conventional dosage forms. The different proportions of sodium carboxymethylcellulose and carbopol 974P (CP 974P) were used for the preparation of films. Carbopol was used to incorporate the desired bioadhesiveness in the films. The films were prepared by solvent casting method and evaluated for bioadhesion, in vitro drug release and effectiveness against Candida albicans. In vitro drug release from the film was determined using a modified Franz diffusion cell while bioadhesiveness was evaluated with a modified two-arm balance using rabbit intestinal mucosa as a model tissue. Films containing 5% CP 974P of the total polymer were found to be the best with moderate swelling along with favorable bioadhesion force, residence time and in vitro drug release. The microbiological studies revealed that drug released from the film could inhibit the growth of C. albicans for 6 h. The drug release mechanism was found to follow non-Fickian diffusion.

  18. Preparation and performance of Ecobras/bentonite biodegrading films

    International Nuclear Information System (INIS)

    Costa, Ana Nery M.; Melo, Nadja M.C.; Canedo, Eduardo L.; Carvalho, Laura H.; Araujo, Arthur R.A.

    2011-01-01

    Compounds based on the biodegradable polymer Ecobras and bentonite clay in its pristine, sonicated, and organically modified with a quaternary ammonium salt forms were prepared as flat films. Clays and compounds were characterized by x-ray diffraction and scanning electron microscopy. Mechanical properties of the films were determined according to pertinent ASTM standards. Reasonable properties, higher than those of the matrix, were obtained with compounds prepared with purified clays and organoclays, particularly for low clay loading. (author)

  19. Inorganic alkali lead iodide semiconducting APbI3 (A = Li, Na, K, Cs and NH4PbI3 films prepared from solution: Structure, morphology, and electronic structure

    Directory of Open Access Journals (Sweden)

    Eric Mankel

    2016-06-01

    Full Text Available APbI3 alkali lead iodides were prepared from aqueous (A= Na, Cs, ammonium NH4+, and methyl­ammonium CH3NH3+ and acetone (A= Li, K solutions by a self-organization low temperature process. Diffraction analysis revealed that the methylammonium-containing system (MAPbI3 crystallizes into a tetragonal perovskite structure, whereas the alkali and NH4+ systems adopt orthorhombic structures. Morphological inspection confirmed the influence of the cation on the growth mechanism: for A = Cs and NH4+, needle-like crystallites with lengths up to 3–4 mm; for A = K, thin stripes with lengths up to 5–6 mm; and for A = MA+, dodecahedral crystallites were observed. For A = Li and Na, the APbI3 systems typically resulted in polycrystalline aggregates. Optical absorption measurements demonstrated large energy band gaps for the alkali and ammonium systems with values between 2.19 and 2.40 eV. For electronic and chemical characterization by photoelectron spectroscopy, the as-prepared powders were dissolved in di-methylformamide and re-crystallized as thin films on F:SnO2 substrates by spin-coating. The binding energy differences between Pb4f and I3d core levels are highly similar in the investigated systems and close to the value measured for PbI2, indicating similar relative partial charges and formal oxidation states. The binding energies of the alkali ions are in accordance with oxidation state +1. The X-ray excited valence band spectra of the investigated APbI3 systems exhibited similar line shapes in the region between the valence band maximum and 4.5 eV higher binding energy due to common PbI6 octahedra which dominate the electronic structure. While the ionization energy values are quite similar (6.15 ± 0.25 eV, the Fermi-level positions of the unintentionally doped materials vary for different cations and different batches of the same material, which indicates that the position of the Fermi level can be influenced by changing the process parameters.

  20. Preparation and characterization of porphyrin-polythiophene stacked films as prepared by electrochemical method under stirring condition

    International Nuclear Information System (INIS)

    Sugawa, Kosuke; Akiyama, Tsuyoshi; Yamada, Sunao

    2008-01-01

    Porphyrin-polythiophene (pTh) stacked films consisting of meso-tetrathienylporphyrin (TThP) and bithiophene (BiTh) were prepared on transparent indium-tin-oxide (ITO) electrodes by sequential electrochemical scanning of applied potential between 0 and + 2 V vs Ag wire in the electrolyte solution of BiTh and TThP under stirring condition. First, the pTh films were prepared by electrochemical polymerization and then TThP was incorporated into the as-prepared pTh film by subsequent electrochemical scanning as described above in the TThP solution. The operation of solution stirring during electrochemical scanning achieved the formation of robust stacked films. UV/Vis and fluorescence spectra confirmed that the amount of TThP moiety increased with increasing the number of electrochemical scanning cycles in the TThP solution. In order to evaluate the incorporation profile of TThP, surface analyses and depth profiles of stacked films were carried out by XPS spectroscopy. The results suggested that all films formed porphyrin-polythiophene stacked structure precisely, and that TThP was exclusively incorporated around the outermost region of the pTh film

  1. Comparison of barium titanate thin films prepared by inkjet printing and spin coating

    Directory of Open Access Journals (Sweden)

    Jelena Vukmirović

    2015-09-01

    Full Text Available In this paper, barium titanate films were prepared by different deposition techniques (spin coating, office Epson inkjet printer and commercial Dimatix inkjet printer. As inkjet technique requires special rheological properties of inks the first part of the study deals with the preparation of inks, whereas the second part examines and compares structural characteristics of the deposited films. Inks were synthesized by sol-gel method and parameters such as viscosity, particle size and surface tension were measured. Deposited films were examined by optical and scanning electron microscopy, XRD analysis and Raman spectroscopy. The findings consider advantages and disadvantages of the particular deposition techniques.

  2. Preparation and Characterization of FC Films Coated on PET Substrates by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Huang Mei-lin

    2018-01-01

    Full Text Available Fluorocarbon (FC films were prepared on polyethylene terephthalate (PET plates and PET fabrics respectively by a radiofrequency (RF magnetron sputtering technique using polytetrafluoroethylene (PTFE as a target. Scanning electron microscope and X-ray photoelectron spectroscopy were used to investigate the morphology, structure and composition of the obtained FC films. The hydrophobicity and uvioresistant properties of the FC film coated fabric were studied. The results show that the FC films were successfully deposited on the PET substrates by a RF magnetron sputtering. The deposited films are made up of four components -CF3, -CF2-, CF- and -C-. The proportions of the four components and surface morphologies of the deposited films vary with the sputtering conditions. Compared with the original fabric samples, the hydrophobicity of the FC film coated fabrics is quite good and improved significantly.

  3. Preparation and properties of silk sericin/cellulose cross-linking films

    Directory of Open Access Journals (Sweden)

    Wang Kunyan

    2017-01-01

    Full Text Available Silk sericin/cellulose cross-linked films were successfully prepared using glutaraldehyde as cross-linkinger. FTIR was applied to characterize the chemical structure of films. Cross-linked silk sericin film was found the peak intensity of FTIR for cross-linked film decreased markedly compared to pure silk sericin, which indicating cross-linking reaction has been occurred. The increasing value of swelling ratio also indicated the cross-linking has been happened. The cross-linking reaction increased the thermal decomposition temperature.

  4. Radiolytic preparation of thin Au film directly on resin substrate using high-energy electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Ohkubo, Yuji, E-mail: okubo@upst.eng.osaka-u.ac.jp [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Seino, Satoshi; Nakagawa, Takashi; Kugai, Junichiro [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ueno, Koji [Japan Electron Beam Irradiation Service Ltd., 5-3 Ozushima, Izumiohtsu, Osaka 595-0074 (Japan); Yamamoto, Takao A. [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2016-04-01

    A novel method for preparing thin Au films directly on resin substrates using an electron beam was developed. The thin Au films were prepared on a resin substrate by the reduction of Au ions in an aqueous solution via irradiation with a high-energy electron beam (4.8 MeV). This reduction method required 7 s of the irradiation time of the electron beam. Furthermore, no reductant or catalyst was needed. As the concentration of Au ions in the precursor solution was increased, the amount of Au deposited on the resin substrate increased, too, and the structure of the prepared Au film changed. As a result, the film color changed as well. Cross-sectional scanning electron microscope images of the thus-prepared Au film indicated that the Au films were consisted of two layers: a particle layer and a bottom bulk layer. There was strong adhesion between the Au films and the underlying resin substrates. This was confirmed by the tape-peeling test and through ultrasonic cleaning. After both processes, Au remained on the resin substrates, while most of the particle-like moieties were removed. This indicated that the thin Au films prepared via irradiation with a high-energy electron beam adhered strongly to the resin substrates. - Highlights: • A thin gold (Au) film was formed by EBIRM for the first time. • The irradiation time of the electron beam was less than 10 s. • Thin Au films were obtained without reductant or catalyst. • Au films were consisted of two layers: a particle layer and a bottom bulk layer. • There was strong adhesion between the bottom bulk layer and the underlying resin substrates.

  5. Magnetic properties and crystal texture of Co alloy thin films prepared on double bias Cr

    Science.gov (United States)

    Deng, Y.; Lambeth, D. N.; Lee, L.-L.; Laughlin, D. E.

    1993-05-01

    A double layer Cr film structure has been prepared by sputter depositing Cr on single crystal Si substrates first without substrate bias and then with various substrate bias voltages. Without substrate bias, Cr{200} texture grows on Si at room temperature; thus the first Cr layer acts like a seed Cr layer with the {200} texture, and the second Cr layer, prepared with substrate bias, tends to replicate the {200} texture epitaxially. CoCrTa and CoNiCr films prepared on these double Cr underlayers, therefore, tend to have a {112¯0} texture with their c-axes oriented in the plane of the film. At the same time, the bias sputtering of the second Cr layer increases the coercivity of the subsequently deposited magnetic films significantly. Comparison studies of δM curves show that the use of the double Cr underlayers reduces the intergranular exchange interactions. The films prepared on the Si substrates have been compared with the films prepared on canasite and glass substrates. It has also been found that the magnetic properties are similar for films on canasite and on glass.

  6. Surface preparation for the heteroepitactic growth of ceramic thin films

    International Nuclear Information System (INIS)

    Norton, M.G.; Summerfelt, S.R.; Carter, C.B.

    1990-01-01

    The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron-transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO 3 , and (001) LaAlO 3

  7. Barium titanate thick films prepared by screen printing technique

    Directory of Open Access Journals (Sweden)

    Mirjana M. Vijatović

    2010-06-01

    Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

  8. NdFeB thick films prepared by tape casting

    International Nuclear Information System (INIS)

    Pawlowski, B.; Schwarzer, S.; Rahmig, A.; Toepfer, J.

    2003-01-01

    NdFeB films of thickness between 100 and 800 μm were prepared by tape casting of a slurry containing 84-95 wt% of commercial NdFeB powder (MQP-B, -Q and -S). After curing the flexible green tapes at 120 deg. C non-porous magnetic films are obtained. The remanence of the films is in the range of 350-450 mT and the coercivity is between 300 and 800 kA/m depending on the type of MQP powder used. The magnetic properties of the films are discussed in relation to film composition and type of magnetic material. For MEMS applications the thick films are magnetized with a multi-pole stripe pattern with 1 mm pole pitch. The induction at the surface of the films was measured with a Hall probe and compared to theoretical calculations. The results indicate that the films are completely magnetized regardless of the film thickness. Tape-casted NdFeB thick films are promising candidates for applications in micro-systems or actuators. Miniaturization of the magnet components is one of the key issues in the development of electromagnetic micro-systems, thus creating a need for replacement of small sintered magnets by magnetic thick film components. Other applications include encoders

  9. Niobium and zirconium telluride thin films prepared by sputtering

    International Nuclear Information System (INIS)

    Kassem, M.; Pailharey, D.; Mathey, Y.

    2000-01-01

    A versatile procedure of sputter deposition, well adapted for getting a large of Te/M ratios (with M = Zr or Nb), has led to the synthesis of several highly anisotropic zirconium and niobium poly tellurides in thin film form. Upon tuning the two key parameters of the process, i.e., the Te percentage in the target and the substrate temperature during the deposition, preparation of systems ranging from ZrTe 0 .72 to ZrTe 6 .7, on the one hand, and from NbTe 1 .28 to NbTe 7 .84, on the other, has been achieved. Besides their amorphous or crystalline (with or without preferential orientations) behavior and their relationship to known structural types, the most striking feature of these films is their large departure from the stoichiometry of the bulk Mte x reference compounds. This peculiarity, together with the possible changes of composition under annealing, are described and interpreted in terms of variable of Te and M atoms trapped or intercalated within the parent structures. (author)

  10. Commissioning a hobby cutting device for radiochromic film preparation.

    Science.gov (United States)

    Zolfaghari, Somayeh; Francis, Kirby E; Kairn, Tanya; Crowe, Scott B

    2017-06-01

    In addition to a high spatial resolution and well characterised dose response, one of the major advantages of radiochromic film as a dosimeter is that sheets of film can be cut into pieces suitable for use as calibration films, and for in vivo and phantom measurements. The cutting of film is typically done using scissors or a guillotine, and this process can be time-consuming, limited in precision, requires extensive handling and does not allow holes to be cut from the film without cutting from an existing edge. This study investigated the use of a Brother ScanNCut hobby cutting system for EBT3 film preparation. The optimal operating parameters (blade size, pressure, speed) that resulted in precise cuts with minimal delamination at cut edges were identified using test cutting patterns. These parameters were then used to cut a large film insert for a stereotactic head phantom for comparison against an insert cut with scissors. While the hobby cutting system caused a wider region of delamination at the film edge (1.8 mm) compared to scissors (1 mm), the hobby cutting system was found to be able to produce reproducible cuts more efficiently and more accurately than scissors. The use of the hobby cutting system is recommended for complex phantom inserts (containing sharp corners or holes for alignment rods) or in situations where large numbers of film pieces need to be prepared.

  11. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  12. Fluorocarbon thin film with superhydrophobic property prepared by pyrolysis of hexafluoropropylene oxide

    International Nuclear Information System (INIS)

    Wang Jun; Song Xue; Li Rui; Shen Jinpeng; Yang Guangcheng; Huang Hui

    2012-01-01

    Highlights: ► We successfully prepared nanostructured fluorocarbon thin films using CVD method without any catalysts at low pyrolysis temperature (200–300 °C) of HFPO. ► The films show disparate morphology, high content of CF 2 (>90%), which are also characteristic of bulk PTFE. ► The film deposited at 300 °C shows superhydrophobic property (water contact angle of 172.7°). - Abstract: A fluorocarbon thin film with superhydrophobic property was prepared by chemical vapor deposition (CVD) method at low temperature (200–300 °C) via pyrolysis hexafluoropropylene oxide (HFPO). The experiment results indicated the morphology and structure of fluorocarbon films were strongly dependent on the pyrolysis temperature. As shown through atomic force microscope (AFM), the surface morphology of the films ranged from rodlike grains to sheets. Fourier transform infrared (FTIR) spectroscopy revealed that all the films contained the vibrational frequencies of linear CF 2 chains, which were also characteristic of bulk poly tetrafluoroethylene (PTFE). X-ray photoelectron spectroscopy (XPS) analysis showed that CF 2 structures were predominant in the films with high order. The film deposited at 300 °C exhibited a superhydrophobic surface with contact angle up to 172.7°.

  13. Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Suzuki, Kouji

    1999-09-01

    A novel plasma-assisted RF magnetron sputtering system with an immersed coil antenna between a target and a substrate was applied for preparing Pb(Zr, Ti)O3 (PZT) thin films. The antenna enabled the generation of inductively coupled plasma (ICP) independently of the target RF source. The plasma assisted by the antenna resulted in the changes of ion fluxes and these energy distributions irradiating to the substrate. The crystalline phase of the deposited PZT thin films was occupied by the perovskite phase depending on the antenna power. In addition, a high deposition rate, modified uniformity of film thickness, and a dense film structure with large columnar grains were obtained as a result of effects of the assisted plasma. The application of the plasma-assisted sputtering method may enable the preparation of PZT thin films that haveexcellent properties.

  14. Preparation, Characterization, and Electrochromic Properties of Nanocellulose-Based Polyaniline Nanocomposite Films.

    Science.gov (United States)

    Zhang, Sihang; Sun, Gang; He, Yongfeng; Fu, Runfang; Gu, Yingchun; Chen, Sheng

    2017-05-17

    On the basis of nanocellulose obtained by acidic swelling and ultrasonication, rodlike nanocellulose/polyaniline nanocomposites with a core-shell structure have been prepared via in situ polymerization. Compared to pure polyaniline, the nanocomposites show superior film-forming properties, and the prepared nanocomposite films demonstrate excellent electrochemical and electrochromic properties in electrolyte solution. Nanocomposite films, especially the one prepared with 40% polyaniline coated nanocomposite, exhibited faster response time (1.5 s for bleaching and 1.0 s for coloring), higher optical contrast (62.9%), higher coloration efficiency (206.2 cm 2 /C), and more remarkable switching stability (over 500 cycles). These novel nanocellulose-based nanorod network films are promising novel electrochromic materials with excellent properties.

  15. Chalcopyrite CuInSe2 films prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Lommasson, T.C.; Burnett, A.F.; Chou, L.H.; Thornton, J.A.; Kim, M.

    1987-01-01

    Polycrystalline films of CuInSe 2 have been prepared on glass substrates by reactive cosputtering from Cu and In planar magnetron targets using Ar-H 2 Se as a working gas. The film compositions were close to the Cu 2 Se-In 2 Se 3 tie-line of the ternary phase diagram with Cu/In ratios ranging from 0.75 to about 2. This paper reports on measurements of the structural, electronic and optical properties of the films. The coatings on the Cu-rich side of the stoichiometric composition were characterized by a columnar structure with an uneven surface topography

  16. Effect of titanium incorporation on the structural, mechanical and biocompatible properties of DLC thin films prepared by reactive-biased target ion beam deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Bharathy, P. Vijai [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India); Department of Mechanical Engineering, University of Saskatchewan, Saskatoon (Canada); Nataraj, D., E-mail: de.natraj@gmail.com [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India); Chu, Paul K.; Wang, Huaiyu [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon (Canada); Kiran, M.S.R.N. [School of Physics, University of Hyderabad, Hyderabad, Andra Pradesh (India); Silvestre-Albero, J. [Laboratorio de Materiales Avanzados, Departmento de Quimica Inorganica, Universidad de Alicante, Ap 99, E-03080 Alicante (Spain); Mangalaraj, D. [Thin Films and Nanomaterials Lab, School of Physical Sciences, Bharathiar University, Coimbatore 641046 (India)

    2010-10-15

    Amorphous diamond like carbon (DLC) and titanium incorporated diamond like carbon (Ti-DLC) thin films were deposited by using reactive-biased target ion beam deposition method. The effects of Ti incorporation and target bias voltage on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and nano-indentation. It was found that the Ti content in Ti-DLC films gets increased with increasing target bias voltage. At about 4.2 at.% of Ti, uniform sized well dispersed nanocrystals were seen in the DLC matrix. Using FFT analysis, a facility available in the TEM, it was found that the nanocrystals are in cubic TiC phase. Though at the core, the incorporated Ti atoms react with carbon to form cubic TiC; most of the surface exposed Ti atoms were found to react with the atmospheric oxygen to form weakly bonded Ti-O. The presence of TiC nanocrystals greatly modified the sp{sup 3}/sp{sup 2} hybridized bonding ratio and is reflected in mechanical hardness of Ti-DLC films. These films were then tested for their biocompatibility by an invitro cell culturing test. Morphological observation and the cell proliferation test have demonstrated that the human osteoblast cells well attach and proliferate on the surface of Ti incorporated DLC films, suggesting possible applications in bone related implant coatings.

  17. Effect of titanium incorporation on the structural, mechanical and biocompatible properties of DLC thin films prepared by reactive-biased target ion beam deposition method

    International Nuclear Information System (INIS)

    Bharathy, P. Vijai; Nataraj, D.; Chu, Paul K.; Wang, Huaiyu; Yang, Q.; Kiran, M.S.R.N.; Silvestre-Albero, J.; Mangalaraj, D.

    2010-01-01

    Amorphous diamond like carbon (DLC) and titanium incorporated diamond like carbon (Ti-DLC) thin films were deposited by using reactive-biased target ion beam deposition method. The effects of Ti incorporation and target bias voltage on the microstructure and mechanical properties of the as-deposited films were investigated by means of X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy and nano-indentation. It was found that the Ti content in Ti-DLC films gets increased with increasing target bias voltage. At about 4.2 at.% of Ti, uniform sized well dispersed nanocrystals were seen in the DLC matrix. Using FFT analysis, a facility available in the TEM, it was found that the nanocrystals are in cubic TiC phase. Though at the core, the incorporated Ti atoms react with carbon to form cubic TiC; most of the surface exposed Ti atoms were found to react with the atmospheric oxygen to form weakly bonded Ti-O. The presence of TiC nanocrystals greatly modified the sp 3 /sp 2 hybridized bonding ratio and is reflected in mechanical hardness of Ti-DLC films. These films were then tested for their biocompatibility by an invitro cell culturing test. Morphological observation and the cell proliferation test have demonstrated that the human osteoblast cells well attach and proliferate on the surface of Ti incorporated DLC films, suggesting possible applications in bone related implant coatings.

  18. Preparation and Hydrogen Absorption/Desorption of Nanoporous Palladium Thin Films

    Directory of Open Access Journals (Sweden)

    Wen-Chung Li

    2009-12-01

    Full Text Available Nanoporous Pd (np-Pd was prepared by co-sputtering Pd-Ni alloy films onto Si substrates, followed by chemical dealloying with sulfuric acid. X-ray diffractometry and chemical analysis were used to track the extent of dealloying. The np-Pd structure was changed from particle-like to sponge-like by diluting the sulfuric acid etchant. Using suitable precursor alloy composition and dealloying conditions, np-Pd films were prepared with uniform and open sponge-like structures, with interconnected ligaments and no cracks, yielding a large amount of surface area for reactions with hydrogen. Np-Pd films exhibited shorter response time for hydrogen absorption/desorption than dense Pd films, showing promise for hydrogen sensing.

  19. Microstructure and properties of manganese dioxide films prepared by electrodeposition

    International Nuclear Information System (INIS)

    Jacob, G. Moses; Zhitomirsky, I.

    2008-01-01

    Nanostructured manganese dioxide films were obtained by galvanostatic, pulse and reverse pulse electrodeposition from 0.01 to 0.1 M KMnO 4 solutions. The deposition yield was investigated by in situ monitoring the deposit mass using a quartz crystal microbalance (QCM). Obtained films were studied by electron microscopy, X-ray diffraction analysis, energy dispersive spectroscopy, thermogravimetric and differential thermal analysis. The QCM and electron microscopy data were utilized for the investigation of deposition kinetics and film formation mechanism. It was shown that the deposition rate and film microstructure could be changed by variation of deposition conditions. The method allowed the fabrication of dense or porous films. The thickness of dense films was limited to ∼0.1 μm due to the insulating properties of manganese dioxide and film cracking, attributed to drying shrinkage. Porous and crack-free 1-2 μm films were obtained using galvanostatic or reverse pulse deposition from 0.02 M KMnO 4 solutions. It was shown that film porosity is beneficial for the charge transfer during deposition and crack prevention in thick films. Moreover, porous nanostructured films showed good capacitive behavior for applications in electrochemical supercapacitors. The porous nanostructured films prepared in the reverse pulse regime showed higher specific capacitance (SC) compared to the SC of the galvanostatic films. The highest SC of 279 F/g in a voltage window of 1 V was obtained in 0.1 M Na 2 SO 4 solutions at a scan rate of 2 mV/s

  20. Effect of preparation conditions on the diffusion parameters of Cu/Ni thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rammo, N.N.; Makadsi, M.N. [College of Science, Baghdad University, Baghdad (Iraq); Abdul-Lettif, A.M. [College of Science, Babylon University, Hilla (Iraq)

    2004-11-01

    Diffusion coefficients of vacuum-deposited Cu/Ni bilayer thin films were determined in the temperature range 200-500 C using X-ray photoelectron spectroscopy, sheet resistance measurements, and X-ray diffraction analysis. The difference between the results of the present work and those of previous relevant investigations may be attributed to the difference in the film microstructure, which is controlled by the preparation conditions. Therefore, the effects of deposition rate, substrate temperature, film thickness, and substrate structure on the diffusion parameters were separately investigated. It is shown that the diffusion activation energy (Q) decreases as deposition rate increases, whereas Q increases as substrate temperature and film thickness increase. The value of Q for films deposited on amorphous substrates is less than that for films deposited on single-crystal substrates. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Preparation and characterization of ZnO films by modified SILAR method

    International Nuclear Information System (INIS)

    Zhang Ling; Liu Jie; Hou Mingdong; Sun Youmei; Duan Jinlai; Yao Huijun; Mo Dan; Chen Yanfeng

    2009-01-01

    A modified solution method, successive ionic layer adsorption and reaction(SILAR), was applied to prepare transparent zinc oxide(ZnO) film on glass substrate at (125±5) degree C in mixed ion precursor solution. The surface morphology and crystallization of films were analyzed by field emission scanning microscopy (FESEM) and X-ray diffraction(XRD), respectively. The optical properties of the films were studied by ultraviolet visible(UV-Vis)spectroscopy. The results show that the obtained samples are polycrystalline films of hexagonal wurtzite structure, with the preference of [002] orientation. The as-deposited films exhibit uniform and compact surface morphology, with the film thickness of 550 nm, and have high transmittance in the visible band(>80%). (authors)

  2. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    Science.gov (United States)

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

  3. RBS and NRA of cobalt oxide thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Andrade, E.; Huerta, L.; Pineda, J.C.; Zavala, E.P.; Barrera, E.; Rocha, M. F.; Vargas, C.A.

    2001-01-01

    This work presents a study of cobalt oxide thin films produced by the sol-gel process on aluminum and glass substrates. These films have been analyzed using two ion beam analysis (IBA) techniques: a) a standard RBS 4 He 2 MeV and b) nuclear reaction analysis (NRA) using a 1 MeV deuterium beam. The 12 C(d,p 0 ) 13 C nuclear reaction provides information that carbon is incorporated into the film structure, which could be associated to the sinterization film process. Other film measurements such as optical properties, XRD, and SEM were performed in order to complement the IBA analysis. The results show that cobalt oxide film coatings prepared by this technique have good optical properties as solar absorbers and potential uses in solar energy applications

  4. STRUCTURAL, PHOTO-FUNCTIONAL AND SEMICONDUCTOR PROPERTIES OF COPPER OXIDE THIN FILMS PREPARED BY DC REACTIVE METHOD UNDER VARIOUS THICKNESSES Anmar H. Shukur

    Directory of Open Access Journals (Sweden)

    Anmar H. Shukur

    2018-01-01

    Full Text Available Cuprous oxide (Cu2O has been formed on glass substrates by dc reactive magnetron sputtering method, whereas pure target of the solid copper was sputtered with a mixture of plasma for argon gas and oxygen gas was used to form these films. Under vacuum chamber pressure of 1.2×10-5 Pa, thin film thickness was changed from 100 nm to 300 nm while other deposition parameters were fixed. The influence of changing the thickness of thin films on the electrical and the optical properties was investigated in this study. X-ray photoelectron spectroscopy (XPS, X-ray Diffractions system XRD, Atomic Force Microscopy (AFM, hall effect measurement system, UV–VIS spectrophotometer were employed to determine the characteristic of the deposited thin films. Thin film of 200 nm has observed low resistivity of 60.63 Ω cm and direct band gap of 2.5eV. This study has demonstrated that the thickness has direct influence on electrical and optical properties.

  5. Preparation and water absorption of cross-linked chitosan/silk fibroin blend films

    International Nuclear Information System (INIS)

    Suesat, Jantip; Rujiravanit, Ratana; Jamieson, Alexander M.; Tokura, Seiichi

    2001-01-01

    Natural polymer blend films composed of chitosan and silk fibroin were prepared by varying the ratio of chitosan to silk fibroin, with and without glutaraldehyde as a crosslinking agent. The effects of the ratio of chitosan to silk fibroin and crosslinking agent on swelling behavior of the blend films were studied. For the swelling behavior, the blend films exhibited a dramatic change in the degree of swelling when immersed in acidic solutions. The degree of swelling of the films increased as the chitosan content increased; the blend film with 80% chitosan content had the maximum degree of swelling. It appeared that crosslinking had occurred in the blend films which helped the films to retain their three dimensional structure. In addition, FTIR spectra of the films showed evidence of hydrogen bonding interaction between chitosan and silk fibroin. For the effect of salt type, the films were immersed in various types of aqueous salt solutions, viz NaCl, LiCl, CaCl 2 , AlCl 3 , and FeCl 3 . The films immersed in AlCl 3 and FeCl 3 aqueous solutions gave the maximum degree of swelling. The effects of AlCl 3 and FeCl 3 concentrations on swelling behavior were also investigated. It was found that the maximum degree of swelling of the films occurred at 1.0 x 10 -2 M of AlCl 3 and FeCl 3 aqueous solutions. (author)

  6. Effect of ion nitriding on the crystal structure of 3 mol% Y2O3-doped ZrO2 thin-films prepared by the sol-gel method

    International Nuclear Information System (INIS)

    Ortiz, A.L.; Diaz-Parralejo, A.; Borrero-Lopez, O.; Guiberteau, F.

    2006-01-01

    We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y 2 O 3 -doped ZrO 2 (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr 0.94 Y 0.06 O 1.72 N 0.17 stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice

  7. Preparation and Characterization of HPMC/PVP Blend Films Plasticized with Sorbitol

    OpenAIRE

    Somashekarappa, H.; Prakash, Y.; Hemalatha, K.; Demappa, T.; Somashekar, R.

    2013-01-01

    The aim of this present work is to investigate the effect of plasticizers like Sorbitol on microstructural and mechanical properties of hydroxypropyl methylcellulose (HPMC) and Polyvinylpyrrolidone (PVP) blend films. The pure blend and plasticized blend films were prepared by solution casting method and investigated using wide angle X-ray scattering (WAXS) method. WAXS analysis confirms that the plasticizers can enter into macromolecular blend structure and destroy the crystallinity of the f...

  8. Preparation and properties of low resistivity molybdenum silicide thin films

    International Nuclear Information System (INIS)

    Beddies, G.; Hofmann, K.; Bretschneider, W.; Zscheile, H.D.; Bogdanowa, P.; Helms, H.; Wickleder, K.H.

    1983-01-01

    Using different sputtering methods and target variants Mo/Si mixed films are prepared. After the deposition these thin films are amorphous. Isothermal annealing in vacuum leads to the formation of crystalline phases. The crystallization of the hexagonal phase of MoSi 2 is connected with an increase in stress. The formation of the tetragonal phase causes a great decrease of the specific resistance

  9. Morphology of CdSe films prepared by chemical bath deposition: The role of substrate

    International Nuclear Information System (INIS)

    Simurda, M.; Nemec, P.; Formanek, P.; Nemec, I.; Nemcova, Y.; Maly, P.

    2006-01-01

    We combine optical spectroscopy and transmission electron microscopy to study the growth and the structural morphology of CdSe films prepared by chemical bath deposition (CBD) on two considerably different substrates. The films grown on glass are compact and strongly adherent to the substrate. On the contrary, the films deposited on carbon-coated glass (with approx. 20 nm thick amorphous carbon layer) are only loosely adherent to the substrate. Using transmission electron microscopy we revealed that even though the films grown on both substrates are assembled from closely spaced nanocrystals with diameter of about 5 nm, the films morphology on the sub-micrometer scale is considerably different in the two cases. While the films deposited on glass are rather compact, the films prepared on carbon layer have high porosity and are formed by interconnected spheres which size is dependent on the duration of deposition (e.g. 155 nm for 6 h and 350 nm for 24 h). This shows that the choice of the substrate for CBD has a stronger influence on the sub-micrometer film morphology than on the properties of individual nanocrystals forming the film

  10. Preparation and characterization of micro-grid modified In_2O_3:W films

    International Nuclear Information System (INIS)

    Dong, Dongmei; Wang, Wenwen; Zhang, Fan; Fu, Qiang; Pan, Jiaojiao

    2016-01-01

    Tungsten doped indium oxide (In_2O_3:W, IWO) thin films with IWO micro-grid covered surface were prepared at room temperature using techniques of radio frequency (RF) magnetron sputtering and polystyrene (PS) microsphere template. The composition, crystallization structures, surface morphologies, and optical and electrical properties of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, spectrophotometer from visible to near infrared (NIR) range and Hall effect measurement, respectively. Periodic micro-grid modified surface was obtained to improve light trapping properties. The effects of the PS micro-spheres diameters and the sputtering time on the surface morphology, transmittance in NIR range, diffuse reflection and conductive properties of the IWO films are investigated. Experiments show that surface modification of the IWO film with micro-grid under the optimized condition can improve the conductivity of the films by 15%, and the diffuse reflectance by 150%, with less than 8% decrease of the transmittance in the visible region. The study would be beneficial to the light trapping effect of solar cells using IWO films as transparent electrodes. - Highlights: • In_2O_3:W (IWO) films were obtained by reactive frequency magnetron sputtering. • IWO micro-grids were prepared on the surface of IWO films. • Influences of micro-grid size and sputtering time on IWO films were analyzed. • Both high conductivity and transparency are acquired in near-infrared region.

  11. CdS thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A.; Krishnan, B.; Avellaneda, D.; Castillo, G.A.; Das Roy, T.K.; Shaji, S.

    2015-01-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties

  12. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  13. Preparation of cellulose II and IIII films by allomorphic conversion of bacterial cellulose I pellicles

    International Nuclear Information System (INIS)

    Faria-Tischer, Paula C.S.; Tischer, Cesar A.; Heux, Laurent; Le Denmat, Simon; Picart, Catherine; Sierakowski, Maria-R.

    2015-01-01

    The structural changes resulting from the conversion of native cellulose I (Cel I) into allomorphs II (Cel II) and III I (Cel III I ) have usually been studied using powder samples from plant or algal cellulose. In this work, the conversion of Cel I into Cel II and Cel III I was performed on bacterial cellulose films without any mechanical disruption. The surface texture of the films was observed by atomic force microscopy (AFM) and the morphology of the constituting cellulose ribbons, by transmission electron microscopy (TEM). The structural changes were characterized using solid-state NMR spectroscopy as well as X-ray and electron diffraction. The allomorphic change into Cel II and Cel III I resulted in films with different crystallinity, roughness and hydrophobic/hydrophilicity surface and the films remained intact during all process of allomorphic conversion. - Highlights: • Description of a method to modify the allomorphic structure of bacterial cellulose filmsPreparation of films with specific morphologies and hydrophobic/hydrophilic surface characters • First report on cellulose III films from bacterial cellulose under swelling conditions • Detailed characterization of cellulose II and III films with complementary techniques • Development of films with specific properties as potential support for cells, enzymes, and drugs

  14. Patterned magnetite films prepared via soft lithography and thermal decomposition

    International Nuclear Information System (INIS)

    An Lijuan; Li, Zhaoqiang; Li Wei; Nie Yaru; Chen Zhimin; Wang Yanping; Yang Bai

    2006-01-01

    A method for the fabrication of patterned magnetite (Fe 3 O 4 ) films is presented. We first prepared an ordered 2D array of Fe(acac) 3 through a selective deposition technique on patterned self-assembled monolayers. Using thermal decomposition at elevated temperature (300 o C), we transformed the patterned Fe(acac) 3 into patterned Fe 3 O 4 films in a short reaction time. These patterned films have been confirmed by using optical photographs, field emission scanning electron microscopy and atomic force microscopy

  15. Preparation and characterization of Zn Se thin films

    CERN Document Server

    Ganchev, M; Stratieva, N; Gremenok, V; Zaretskaya, E; Goncharova, O

    2003-01-01

    Chemical bath deposition technique for preparation of ZnSe thin films is presented. The influence of bath temperature and duration of deposition on film growth and quality has been studied. The effect of post-deposition annealing in different ambient is also discussed. It has been determined that heat treatment removes the oxygen-containing phase from the as-deposited films and improves crystallinity. The optical and electric properties of the deposits show their potential for an alternative buffer layer in chalcopyrite-based solar cells.

  16. ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    Martin Mikulics

    2012-07-01

    Full Text Available Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001 as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.

  17. Characterization of cobalt oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Louardi, A.; Rmili, A.; Ouachtari, F.; Bouaoud, A. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco)

    2011-09-15

    Highlights: > Co{sub 3}O{sub 4} thin films show a micro porous structure. > Co{sub 3}O{sub 4} thin films are formed with spherical grains less than 50 nm in diameter. > The porous structure of Co{sub 3}O{sub 4} films is expected to have promising application in electrochromism. - Abstract: Cobalt oxide (Co{sub 3}O{sub 4}) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of hydrated cobalt chloride salt (CoCl{sub 2}.6H{sub 2}O) as source of cobalt. The films were deposited onto the amorphous glass substrates kept at different temperatures (300-500 deg. C). The influences of molar concentration of the starting solution and substrate temperature on the structural, morphological and optical properties of (Co{sub 3}O{sub 4}) thin films were studied. It was found from X-ray diffraction (XRD) analysis that the films prepared with molar concentration greater than 0.025 M/L were polycrystalline spinel type cubic structure. The preferred orientation of the crystallites of these films changes gradually from (6 2 2) to (1 1 1) when the substrate temperature increases. By Raman spectroscopy, five Raman active modes characteristic of Co{sub 3}O{sub 4} spinel type cubic structure were found and identified at 194, 484, 522, 620 and 691 cm{sup -1}. The scanning electron microscopy (SEM) images showed micro porous structure with very fine grains less than 50 nm in diameter. These films exhibited also a transmittance value of about 70% in the visible and infra red range.

  18. Study of structural and electrical properties of thin NiOx films prepared by ion beam sputtering of Ni and subsequent thermo-oxidation

    Czech Academy of Sciences Publication Activity Database

    Horák, Pavel; Lavrentiev, Vasyl; Bejšovec, Václav; Vacík, Jiří; Daniš, S.; Vrňata, M.; Khun, J.

    2013-01-01

    Roč. 86, č. 11 (2013), s. 470 ISSN 1434-6028 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : NiO film * electrical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.463, year: 2013

  19. Effects of Preparation Conditions on the CuInS2 Films Prepared by One-Step Electrodeposition Method

    Directory of Open Access Journals (Sweden)

    Rongfeng Guan

    2015-01-01

    Full Text Available CuInS2 thin films were prepared onto indium tin oxide (ITO substrates by sulfurization of electrodeposited CuxInySz precursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ ratio, sulfurization temperature, and sulfur content on the CuInS2 thin films were investigated. Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively. As a result, the optimal well-crystallized CuInS2 films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2 thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.

  20. The structural heterogeneity and optical properties in chalcogenide glass films

    International Nuclear Information System (INIS)

    Shurgalin, Max; Fuflyigin, Vladimir N; Anderson, Emilia G

    2005-01-01

    The microscopic structure and optical properties of glassy films prepared by vapour phase deposition process from the germanium-arsenic-selenium family of chalcogenide glasses have been studied. A number of different molecular clusters or domains that can exist in the glass structure are found to play a significant role in determining the absorption characteristics and refractive index of the glass films. Modifications of the glass structure can be described by a variation of relative concentrations of the clusters and can be effected by modifications of film chemical composition and deposition conditions. Changes in absorption spectra are directly correlated with variation in relative concentrations of the structural fragments with different electronic bandgap properties. Experimental results suggest structural heterogeneity and support validity of the cluster structural model for the chalcogenide glasses

  1. Preparation of pectin/silver nanoparticles composite films with UV-light barrier and properties.

    Science.gov (United States)

    Shankar, Shiv; Tanomrod, Nattareya; Rawdkuen, Saroat; Rhim, Jong-Whan

    2016-11-01

    Silver nanoparticles (AgNPs) was synthesized by a green method using an aqueous extract of Caesalpinia mimosoides Lamk (CMLE) as reducing and stabilizing agents, and they were used for the preparation of pectin-based antimicrobial composite films. The AgNPs were spherical in shape with the size in the range of 20-80nm and showed the absorption peak around 500nm. The pectin/AgNPs composite film exhibited characteristic absorption peak of AgNPs at 480nm. The surface color and light transmittance of the pectin films were greatly influenced by the addition of AgNPs. The lightness of the films decreased, however, redness and yellowness of the films increased after incorporation of AgNPs. UV-light barrier property of the pectin film increased significantly with a little decrease in the transparency. Though there were no structural changes in the pectin film by the incorporation of CMLE and AgNPs as indicated by the FTIR results, the film properties such as thermal stability, mechanical strength, and water vapor barrier properties of the pectin films increased. The pectin/AgNPs nanocomposite films exhibited strong antibacterial activity against food-borne pathogenic bacteria, Escherichia coli and Listeria monocytogenes. Copyright © 2016 Elsevier B.V. All rights reserved.

  2. Preparation and characterization of collagen/hydroxypropyl methylcellulose (HPMC) blend film.

    Science.gov (United States)

    Ding, Cuicui; Zhang, Min; Li, Guoying

    2015-03-30

    This study aimed to prepare and characterize the collagen/HPMC blend film (1/1). Thermogravimetric analysis and differential scanning calorimetry were used to investigate the thermal properties of the film. Both thermal decomposition temperature and denaturation temperature of the blend film were higher than those of the collagen film due to the intermolecular hydrogen bonding interaction between collagen and HPMC, which was demonstrated by Fourier transform infrared spectroscopy. Additionally, the morphologies, mechanical properties and hydrophilicity of films were examined. The blend film exhibited a more homogeneous and compact structure compared with that of the collagen film, as observed from scanning electron microscopy and atomic force microscopy. The tensile strength, ultimate elongation and hydrophilicity of the blend film were superior to those of the pure collagen film. Furthermore, the introduction of polyethylene glycol 1500 had almost no influence on the thermal properties of the blend film but obviously improved its stretch-ability and smoothness. Copyright © 2014 Elsevier Ltd. All rights reserved.

  3. Study on the Preparation and Properties of Colored Iron Oxide Thin Films

    International Nuclear Information System (INIS)

    Zhao Xianhui; Li Changhong; Liu Qiuping; He Junjing; Wang Hai; Liang Song; Duan Yandong; Liu Su

    2013-01-01

    Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe 2 O 3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H 2 O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H 2 O was 15: 13: 1, the quality of Fe(NO 3 ) 3 ·9H 2 O was 6g, and pH value was 3, reddish and uniform Fe 2 O 3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ∼350.2nm. Different H 2 O contents could result in different morphologies of Fe 2 O 3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.

  4. Structures and Elastic Moduli of Polymer Nanocomposite Thin Films

    Science.gov (United States)

    Yuan, Hongyi; Karim, Alamgir; University of Akron Team

    2014-03-01

    Polymeric thin films generally possess unique mechanical and thermal properties due to confinement. In this study we investigated structures and elastic moduli of polymer nanocomposite thin films, which can potentially find wide applications in diverse areas such as in coating, permeation and separation. Conventional thermoplastics (PS, PMMA) and biopolymers (PLA, PCL) were chosen as polymer matrices. Various types of nanoparticles were used including nanoclay, fullerene and functionalized inorganic particles. Samples were prepared by solvent-mixing followed by spin-coating or flow-coating. Film structures were characterized using X-ray scattering and transmission electron microscopy. Elastic moduli were measured by strain-induced elastic buckling instability for mechanical measurements (SIEBIMM), and a strengthening effect was found in certain systems due to strong interaction between polymers and nanoparticles. The effects of polymer structure, nanoparticle addition and film thickness on elastic modulus will be discussed and compared with bulk materials.

  5. Chain and mirophase-separated structures of ultrathin polyurethane films

    International Nuclear Information System (INIS)

    Kojio, Ken; Yamamoto, Yasunori; Motokucho, Suguru; Furukawa, Mutsuhisa; Uchiba, Yusuke

    2009-01-01

    Measurements are presented how chain and microphase-separated structures of ultrathin polyurethane (PU) films are controlled by the thickness. The film thickness is varied by a solution concentration for spin coating. The systems are PUs prepared from commercial raw materials. Fourier-transform infrared spectroscopic measurement revealed that the degree of hydrogen bonding among hard segment chains decreased and increased with decreasing film thickness for strong and weak microphase separation systems, respectively. The microphase-separated structure, which is formed from hard segment domains and a surrounding soft segment matrix, were observed by atomic force microscopy. The size of hard segment domains decreased with decreasing film thickness, and possibility of specific orientation of the hard segment chains was exhibited for both systems. These results are due to decreasing space for the formation of the microphase-separated structure.

  6. Preparation and Characterization of Nicke-iron Alloy Film as Freestanding Electrode for Oxygen Evolution Reaction

    Directory of Open Access Journals (Sweden)

    Yao Mengqi

    2018-01-01

    Full Text Available This work reports the porous nicke-iron alloy film supported on stainless steel mesh as freestanding electrode for enhanced oxygen evolution reaction (OER catalyst prepared from an one step electrodeposition method. Results indicated that the porous nickle-iron alloy film exhibits a low overpotential of 270 mV at 10 mA cm-2 and excellent electroconductibility. The superior OER properties can be attributed to its novel synthetic process, conductive substrate and porous structure. This work will provide a new strategy to fabricate alloy film for OER electrocatalyst.

  7. TiCx thin films coatings prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Saoula, N.; Handa, K.; Kesri, R.

    2004-01-01

    demonstrate clearly the great influence of the variation of different parameters (deposition time, RF power, total pressure, gas mixture (Ar+CH 4 ) on the film growth rates and thickness. The aim of present work is to study their influence of gas mixture, more specifically of carbon content on the structure, composition and the hardness of TiC coatings, prepared using an RF sputtering system

  8. Properties of Zn O/Cr thin films prepared by Sol-Gel

    International Nuclear Information System (INIS)

    Tirado G, S.; Olvera A, R.

    2014-08-01

    Zn O films and those superficially modified with chromium were deposited on substrates of soda-lime glass, using the Sol-Gel process and the repeated immersion method. Starting from dehydrated zinc acetate was prepared a solution to 0.6 M to ambient temperature in 2-methoxyethanol and monoethanolamine (Mea) stirring magnetically. The Sol was prepared with an aging to seven days and was used to grow a films group with thickness to eight immersions. These same films were superficially modified with several depositions of a chromium nitrate Sol dissolved in ethanol to low concentration. The Zn O films were structurally characterized by X-ray diffraction, its chemical composition by energy dispersive X-ray spectroscopy and its morphology by scanning electron microscopy and atomic force microscopy, as well as their optical properties by UV-vis. Of the obtained results are proposed possible applications. (author)

  9. Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates

    Science.gov (United States)

    Hioki, Tsuyoshi; Akiyama, Masahiko; Ueda, Tomomasa; Onozuka, Yutaka; Hara, Yujiro; Suzuki, Kouji

    2000-09-01

    Lead-zirconate-titanate (PZT) thin films were prepared on non-alkaline glass substrates widely used in liquid crystal display (LCD) devices, by plasma-assisted magnetron RF sputtering with an immersed coil. After preparation of the PZT thin film, the glass was available for use in LCD device processing. No mutual diffusion of the elements was recognized between the glass substrate and the bottom electrode. The PZT layer had a dense film structure with rectangular and columnar grains, and only its perovskite phase was crystalline. PZT thin films on a glass substrate had leakage current densities of about 10-8 A/cm2, acceptable hysteresis loop shapes with the remanent polarization (Pr) of 45 μC/cm2 and the coercive field (Ec) of 90 kV/cm. Ferroelectric properties on a glass substrate almost conform with those on a Si-based substrate.

  10. Niobium Pentoxide thin films employ simple colloidal suspension at low preparation temperature

    Directory of Open Access Journals (Sweden)

    Abood M. K.

    2017-01-01

    Full Text Available In this work a nano-colloidal suspension is used to prepare Nb2O5 thin films. The effect of different substrates on structural properties of niobium pentoxide thin film deposited by spin coating technique on silicon and quartz substrates are presented. We observed that the obtained structure is monocline in both substrates. The diffraction peaks in both substrates ensured the successful formation of Nb2O5 thin films with a clear polymorphous structure. However, the structure became more crystalline with additional distinguished peaks on silicon substrate comparing to quartz substrate. The extracted structural parameters from X-Ray diffraction show that the grain size of the thin films on quartz is smaller than silicon with the values of 16.47 nm and 20.98 nm respectively. The stress measurement records the values of 0.19 and 0.00719 for the thin films deposited on silicon and quartz substrates respectively. Effects of film thickness depicted increment in the absorbance and reduction in the band gap. Energy gaps of 2.7, 2.58 and, 2.5 eV are measured as a result of increasing the film thicknesses of 325, 420 and 450 nm respectively.

  11. Preparation of biaxially oriented TlCu-1234 thin films

    CERN Document Server

    Khan, N A; Tateai, F; Kojima, T; Ishida, K; Terada, N; Ihara, H

    1999-01-01

    The single phase of TlCu-1234 superconductor thin films is prepared for the first time by the amorphous phase epitaxy (APE) method, which is thallium treatment of sputtered amorphous phase at 900 degrees C for 1 h. The amorphous $9 phase is prepared by sputtering from the stoichiometric target composition CuBa/sub 2/Ca/sub 3/Cu/sub 4/O/sub 12-y/. The films on the SrTiO/sub 3/ substrate are aligned biaxially after the thallium treatment. Highly reproducible $9 TlCu-1234 films are prepared by this method. The XRD reflected a predominant single phase with the c-axis lattice constant of 18.74 AA. This lattice constant value is in between that of Cu-1234 (17.99 AA) and Tl-1234 (19.11 AA) . The $9 pole figure measurements of (103) reflection of the films showed a-axis-oriented crystals with Delta phi =0.8 degrees . The composition of the films after energy dispersive X-ray (EDX) measurements is Tl/sub 0.8/Cu/sub 0.2/Ba/sub $9 2/Ca/sub 3/Cu/sub 4/O /sub 12-y/. From the resistivity measurements, the T/sub c/ is 113 K...

  12. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Unknown

    moves from low preparation temperature to high preparation temperature. The amorphous .... nm and the interac- tion between the pi-electron clouds of the two layers re- .... sp2 configuration forms to minimize stress and making. C900 films ...

  13. Regenerated cellulose/halloysite nanotube nanocomposite films prepared with an ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Soheilmoghaddam, Mohammad [Department of Polymer Engineering, Faculty of Chemical Engineering, Universiti Teknologi Malaysia (UTM), Johor (Malaysia); Wahit, Mat Uzir, E-mail: mat.uzir@cheme.utm.my [Center for Composites, Universiti Teknologi Malaysia (UTM), 81310 Skudai, Johor (Malaysia); Mahmoudian, Shaya [Department of Textile Engineering, Kashan Branch, Islamic Azad University, Kashan (Iran, Islamic Republic of); Hanid, Nurbaiti Abdul [Department of Polymer Engineering, Faculty of Chemical Engineering, Universiti Teknologi Malaysia (UTM), Johor (Malaysia)

    2013-09-16

    Regenerated cellulose/halloysite nanotube (RC/HNT) nanocomposite films were successfully prepared in ionic liquid, 1-butyl-3-methylimidazolium chloride (BMIMCl) using solution casting method. The structural, morphological, thermal and mechanical properties of RC/HNT nanocomposites were investigated. X-ray diffraction analysis revealed a cellulose II crystalline structure and well dispersed HNT in RC/HNT nanocomposite films. At 6 wt.% HNT film, tensile strength and Young's modulus of RC films improved by 55.3% and 100%, respectively. Moisture absorption by the nanocomposites in an environment with 75% constant relative humidity was reduced by the addition of HNT to the RC. The presence of HNT enhanced the thermal stability and char yield of RC. The significant reinforcing effects of HNTs demonstrated that there is a possible interface interaction between cellulose and HNT which yielded better thermal and mechanical properties of the nanocomposite films as compared to pure RC. - Highlights: • The RC/HNT nanocomposite films were prepared via ionic liquid, BMIMCl. • XRD diffraction patterns and FESEM revealed well dispersed HNT in cellulose matrix. • The nanocomposite films exhibited excellent mechanical properties. • Moisture absorption and diffusion coefficient of RC reduced by HNT incorporation. • Addition of HNT enhanced thermal stability and activation energy of the RC.

  14. Regenerated cellulose/halloysite nanotube nanocomposite films prepared with an ionic liquid

    International Nuclear Information System (INIS)

    Soheilmoghaddam, Mohammad; Wahit, Mat Uzir; Mahmoudian, Shaya; Hanid, Nurbaiti Abdul

    2013-01-01

    Regenerated cellulose/halloysite nanotube (RC/HNT) nanocomposite films were successfully prepared in ionic liquid, 1-butyl-3-methylimidazolium chloride (BMIMCl) using solution casting method. The structural, morphological, thermal and mechanical properties of RC/HNT nanocomposites were investigated. X-ray diffraction analysis revealed a cellulose II crystalline structure and well dispersed HNT in RC/HNT nanocomposite films. At 6 wt.% HNT film, tensile strength and Young's modulus of RC films improved by 55.3% and 100%, respectively. Moisture absorption by the nanocomposites in an environment with 75% constant relative humidity was reduced by the addition of HNT to the RC. The presence of HNT enhanced the thermal stability and char yield of RC. The significant reinforcing effects of HNTs demonstrated that there is a possible interface interaction between cellulose and HNT which yielded better thermal and mechanical properties of the nanocomposite films as compared to pure RC. - Highlights: • The RC/HNT nanocomposite films were prepared via ionic liquid, BMIMCl. • XRD diffraction patterns and FESEM revealed well dispersed HNT in cellulose matrix. • The nanocomposite films exhibited excellent mechanical properties. • Moisture absorption and diffusion coefficient of RC reduced by HNT incorporation. • Addition of HNT enhanced thermal stability and activation energy of the RC

  15. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  16. Structural characterization of casein micelles: shape changes during film formation

    International Nuclear Information System (INIS)

    Gebhardt, R; Kulozik, U; Vendrely, C

    2011-01-01

    The objective of this study was to determine the effect of size-fractionation by centrifugation on the film structure of casein micelles. Fractionated casein micelles in solution were asymmetrically distributed with a small distribution width as measured by dynamic light scattering. Films prepared from the size-fractionated samples showed a smooth surface in optical microscopy images and a homogeneous microstructure in atomic force micrographs. The nano- and microstructure of casein films was probed by micro-beam grazing incidence small angle x-ray scattering (μGISAXS). Compared to the solution measurements, the sizes determined in the film were larger and broadly distributed. The measured GISAXS patterns clearly deviate from those simulated for a sphere and suggest a deformation of the casein micelles in the film. (paper)

  17. Preparing polymer brushes on polytetrafluoroethylene films by free radical polymerization

    International Nuclear Information System (INIS)

    Sun Wei; Chen Yiwang; Deng Qilan; Chen Lie; Zhou Lang

    2006-01-01

    Films of polytetrafluoroethylene (PTFE) were exposed to sodium naphthalenide (Na/naphtha) etchant so as to defluorinate the surface for obtaining hydroxyl functionality. Surface-initiators were immobilized on the PTFE films by esterification of 4,4'-azobis(4-cyanopentanoic acid) (ACP) and the hydroxyl groups covalently linked to the surface. Grafting of polymer brushes on the PTFE films was carried out by the surface-initiated free radical polymerization. Homopolymers brushes of methyl methacrylate (MMA) were prepared by free radical polymerization from the azo-functionalized PTFE surface. The chemical composition and topography of the graft-functionalized PTFE surfaces were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance (ATR) FT-IR spectroscopy and atomic force microscopy (AFM). Water contact angles on PTFE films were reduced by surface grafting of MMA

  18. Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

    International Nuclear Information System (INIS)

    Biederman, H.; Holland, L.

    1983-01-01

    Fluorocarbon films have been prepared by plasma polymerization of CF 4 using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an r.f. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF 4 [25%]-argon[75%] mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF 4 [87%]-argon[13%] were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF 4 as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined. (orig.)

  19. Structural study of Ge/GaAs thin films

    International Nuclear Information System (INIS)

    Lazarov, V K; Lari, L; Lytvyn, P M; Kholevchuk, V V; Mitin, V F

    2012-01-01

    Ge/GaAs heterostructure research is largely motivated by the application of this material in solar cells, metal-oxide-semiconductor field-effect transistors, mm-wave mixer diodes, temperature sensors and photodetectors. Therefore, understanding of how the properties of Ge/GaAs heterostructure depend on its preparation (growth) is of importance for various high-efficiency devices. In this work, by using thermal Ge evaporation on GaAs(100), we studied structural properties of these films as a function of the deposition rate. Film grains size and morphology show strong dependence of the deposition rate. Low deposition rates results in films with large crystal grains and rough surface. At high deposition rates films become flatter and their crystal grains size decreases, while at very high deposition rates films become amorphous. Cross-sectional TEM of the films show that the Ge films are granular single crystal epitaxially grown on GaAs. The Ge/GaAs interface is atomically abrupt and free from misfit dislocations. Stacking faults along the [111] directions that originate at the interface were also observed. Finally by using the Kelvin probe microscopy we show that work function changes are related to the grain structure of the film.

  20. Free-standing graphene films prepared via foam film method for great capacitive flexible supercapacitors

    Science.gov (United States)

    Zhu, Yucan; Ye, Xingke; Tang, Zhonghua; Wan, Zhongquan; Jia, Chunyang

    2017-11-01

    Recently, graphene films have always attracted attention due to their excellent characteristics in energy storage. In this work, a novel graphene oxide (GO) film with excellent mechanical properties, whose thickness was regulated simply via changing the concentration of the surfactant, was successfully prepared by foam film method. After chemical reduction, the reduced GO (rGO) films have excellent electrical conductivity of ∼172 S cm-1. Moreover, the supercapacitors based on the rGO films exhibit satisfied capacitive performance of ∼56 mF cm-2 at 0.2 mA cm-2 in 6 M KOH aqueous solution. Meanwhile, the flexible all solid state supercapacitors (FSSCs) based on the rGO films also show great volumetric capacitance of ∼2810 mF cm-3 at 12 mA cm-3 (∼1607 mF cm-3 at 613 mA cm-3) with polyvinyl alcohol-KOH gel electrolyte. Besides, after 10000 cycles and continuously bent to 180° for 300 times, the volumetric capacitance of the FSSC remains at 81.4% and 90.4% of its initial capacitance value, respectively. Therefore, the free-standing rGO films prepared via foam film method could be considered as promising electrode materials for high performance flexible supercapacitors.

  1. Structural and electrical properties of CZTS thin films by electrodeposition

    Science.gov (United States)

    Rao, M. C.; Basha, Sk. Shahenoor

    2018-06-01

    CZTS (Cu2ZnSnS4) thin films were coated on ITO glass substrates by single bath electrodeposition technique. The prepared films were subsequently characterized by XRD, SEM, FTIR, UV-visible spectroscopy and Raman studies. The thickness of the thin films was measured by wedge method. X-ray diffraction studies revealed the formation of polycrystalline phase. The morphological surface of the prepared thin films was examined by SEM and AFM and showed the presence of microcrystals on the surface of the samples. The elemental analysis and their compositional ratios present in the samples were confirmed by the energy dispersive X-ray analysis. Functional groups and the position of band structure involved in the materials were confirmed by FTIR. Optical absorption studies were performed on the prepared thin films in the wavelength ranging from 300 to 1000 nm and the energy bandgap values were found to be in the range from 1.39 to 1.60 eV. Raman spectral peak which was observed at 360 cm-1 correspond to kesterite phase, was formed due to the vibration of the molecules. Electrical measurements confirmed the nature of the thin film depending on the charge concentration present in the samples.

  2. Preparation and Characterization of K-Carrageenan/Nanosilica Biocomposite Film

    Directory of Open Access Journals (Sweden)

    Lokesh R. Rane

    2014-01-01

    Full Text Available The purpose of this study is to improve the performance properties of K-carrageenan (K-CRG by utilizing nanosilica (NSI as the reinforcing agent. The composite films were prepared by solution casting method. NSI was added up to 1.5% in the K-CRG matrix. The prepared films were characterized for mechanical (tensile strength, tensile modulus, and elongation at break, thermal (differential scanning calorimetry, thermogravimetric analysis, barrier (water vapour transmission rate, morphological (scanning electron microscopy, contact angle, and crystallinity properties. Tensile strength, tensile modulus, and crystallinity were found to have increased by 13.8, 15, and 48% whereas water vapour transmission rate was found to have decreased by 48% for 0.5% NSI loaded K-CRG composite films. NSI was found to have formed aggregates for concentrations above 0.5% as confirmed by scanning electron microscopy. Melting temperature, enthalpy of melting, and degradation temperature of K-CRG increased with increase in concentration of NSI in K-CRG. Contact angle also increased with increase in concentration of NSI in K-CRG, indicating the decrease in hydrophilicity of the films improving its water resistance properties. This knowledge of the composite film could make beneficial contributions to the food and pharmaceutical packaging applications.

  3. Electrocatalytic glucose oxidation at gold and gold-carbon nanoparticulate film prepared from oppositely charged nanoparticles

    International Nuclear Information System (INIS)

    Karczmarczyk, Aleksandra; Celebanska, Anna; Nogala, Wojciech; Sashuk, Volodymyr; Chernyaeva, Olga; Opallo, Marcin

    2014-01-01

    Graphical abstract: - Highlights: • Gold nanoparticulate film electrodes were prepared by layer-by-layer method from oppositely charged nanoparticles. • Positively charged nanoparticles play dominant role in glucose oxidation in alkaline solution. • Gold and gold-carbon nanoparticulate film electrodes exhibit similar glucose oxidation current and onset potential. - Abstract: Electrocatalytic oxidation of glucose was studied at nanoparticulate gold and gold-carbon film electrodes. These electrodes were prepared by a layer-by-layer method without application of any linker molecules. Gold nanoparticles were stabilized by undecane thiols functionalized by trimethyl ammonium or carboxylate groups, whereas the carbon nanoparticles were covered by phenylsulfonate functionalities. The gold nanoparticulate electrodes were characterized by UV-vis and XPS spectroscopy, atomic force microscopy and voltammetry, before and after heat-treatment. Heat-treatment facilitates the aggregation of the nanoparticles and affects the structure of the film. The comparison of the results obtained with film electrodes prepared from gold nanoparticles with the same charge and with gold-carbon nanoparticulate electrodes, proved that positively charged nanoparticles are responsible for the high electrocatalytic activity, whereas negatively charged ones act rather as a linker of the film

  4. Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique

    Directory of Open Access Journals (Sweden)

    S. C. KULKARNI

    2011-02-01

    Full Text Available Indium Oxide (In2O3 thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 750 0C to 950 0C for two hours in air atmosphere. The compositional, morphological and structural properties of In2O3 films were performed by Energy Dispersive Spectroscopy (EDX, XRD, and Scanning electron Microscopy respectively. We explore the various gases to study sensing performance of In2O3 thick films. The maximum response was reported to film fired at 750 0C for H2S gas at 150 0C operating temperature.

  5. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Malek, M. F., E-mail: firz-solarzelle@yahoo.com [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Chair of Targeting and Treatment of Cancer Using Nanoparticles, Deanship of Scientific Research, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  6. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    International Nuclear Information System (INIS)

    Abdullah, M. A. R.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-01-01

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  7. Preparation of SnSe thin films by encapsulated selenization

    International Nuclear Information System (INIS)

    Sabar D. Hutagalung; Samsudi Sakrani; Yussof Wahab

    1994-01-01

    Tin selenide thin films were prepared by encapsulated selenization. A stacked layer of evaporated Sn and Se films were annealed in a carbon block at temperatures 100 - 500 degree Celsius for 3 hours. X-ray analysis and SEM (Scanning electron) micrograph results showed that SnSe was initially formed at 150 degree Celsius with crystal size 30.0 nm and reached optimum formation at 200 daximum of 57.4 % yield of 5-decene. Other factors such as reaction temperatures, types of solvent and wt% of rhenium loadings influence the activity of the catalytic system

  8. Preparation of Track Etch Membrane Filters Using Polystyrene Film

    International Nuclear Information System (INIS)

    Kaewsaenee, Jerawut; Ratanatongchai, Wichian; Supaphol, Pitt; Visal-athaphand, Pinpan

    2007-08-01

    Full text: Polystyrene nuclear track etch membrane filters was prepared by exposed 13 .m thin film polystyrene with fission fragment. Nuclear latent track was enlarged to through hole on the film by etching with 80 o C 40% H 2 SO 4 with K 2 Cr 2 O 7 solution for 6-10 hour. The hole size was depend on concentration of etching solution and etching time with 1.3-3.4 .m hole diameter. The flow rate test of water was 0.79-1.56 mm cm-2 min-1 at 109.8-113.7 kPa pressure

  9. Preparation of Ta Te2 thin films by laser ablation

    International Nuclear Information System (INIS)

    Zidan, M.D.; Alkhwam, M.; Alkhasm, M.

    2006-03-01

    The laser ablation system consisting of a vacuum chamber and Nd-YAG laser has been built for deposition TaTe 2 on three different substrates (Silicon, glass, and Aluminium). The surface topography of the prepared thin films has been studied by atomic force microscopy (AFM). TaTe 2 powder was characterized by using x-ray diffraction. The crystallinity of the thin films was examined by x-ray diffraction (XRD). The results show no peaks corresponding TaTe 2 , but there are some indications to the Ta 3 N 5 . (author)

  10. Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

    Science.gov (United States)

    Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

    2014-01-01

    In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x Ag = 0.5 are effective against E. coli and S. aureus after 24 h. PMID:24523630

  11. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    International Nuclear Information System (INIS)

    Shaji, S.; Garcia, L.V.; Loredo, S.L.; Krishnan, B.

    2017-01-01

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb_2S_3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb_2S_3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb_2S_3 thin films for optoelectronic applications.

  12. Antimicrobial activity of thin solid films of silver doped hydroxyapatite prepared by sol-gel method.

    Science.gov (United States)

    Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

    2014-01-01

    In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x(Ag) = 0.5 are effective against E. coli and S. aureus after 24 h.

  13. Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Simona Liliana Iconaru

    2014-01-01

    Full Text Available In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM with energy Dispersive X-ray attachment (X-EDS, Fourier transform infrared spectroscopy (FT-IR, and glow discharge optical emission spectroscopy (GDOES. These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with xAg=0.5 are effective against E. coli and S. aureus after 24 h.

  14. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); Garcia, L.V. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); Loredo, S.L. [Centro de Investigación en Materiales Avanzados (CIMAV), Unidad Monterrey, PIIT, Apodaca, Nuevo León (Mexico); Krishnan, B. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, 66455 (Mexico); CIIDIT—Universidad Autónoma de Nuevo León, Apodaca, Nuevo León (Mexico); and others

    2017-01-30

    Highlights: • Antimony sulfide thin films were prepared by normal CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • These films were photoconductive. - Abstract: Antimony sulfide (Sb{sub 2}S{sub 3}) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb{sub 2}S{sub 3} thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV–vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb{sub 2}S{sub 3} thin films for optoelectronic applications.

  15. Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique

    International Nuclear Information System (INIS)

    Kurogi, H.; Yamagata, Y.; Ebihara, K.

    1998-01-01

    Pb(Zr X Ti 1-X )O 3 (PZT) films have excellent ferroelectric, optical, piezoelectric, and pyroelectric properties. We prepared PZT thin films by the excimer laser ablation technique. A pulsed KrF excimer laser (Lambda Physik LPX305icc, pulse duration of 25 ns, λ=248 nm, 850 mJ Max.) was used to ablate the bulk targets. We investigated the influence of bottom electrode materials on the characteristics of the PZT thin films prepared on Pt and YBCO underlayers. The X-ray diffraction (XRD) patterns showed that the PZT films prepared with a laser fluence of 2 Jcm -2 on YBCO/MgO(100) substrate at a wide temperature range of 550-680 C have a perovskite (001) structure. At the same laser fluence, the PZT films prepared on Pt/MgO(100) substrate have a perovskite (001) structure only at 650 C. The polarization-electric field (P-E) characteristics and fatigue properties of PZT thin films were measured by the Sawyer-Tower circuit. The remnant polarization and coercive field have been found to be P r =15 μC cm -2 , 30 μC cm -2 and E c =200 kV cm -1 , 100 kV cm -1 for Au/PZT/Pt/MgO and Au/PZT/YBCO/MgO correspondingly. The remnant polarization of Au/PZT/YBCO/MgO thin film was reduced to one-half after about 10 8 cycles of switching. (orig.)

  16. Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique

    Energy Technology Data Exchange (ETDEWEB)

    Kurogi, H; Yamagata, Y; Ebihara, K [Kumamoto Univ. (Japan). Dept. of Electr. Eng. and Comput. Sci.; Inoue, N [Kyushu Electric Power Co., Inc., Suizenji, 1-6-36, Kumamoto 862 (Japan)

    1998-03-01

    Pb(Zr{sub X}Ti{sub 1-X})O{sub 3} (PZT) films have excellent ferroelectric, optical, piezoelectric, and pyroelectric properties. We prepared PZT thin films by the excimer laser ablation technique. A pulsed KrF excimer laser (Lambda Physik LPX305icc, pulse duration of 25 ns, {lambda}=248 nm, 850 mJ Max.) was used to ablate the bulk targets. We investigated the influence of bottom electrode materials on the characteristics of the PZT thin films prepared on Pt and YBCO underlayers. The X-ray diffraction (XRD) patterns showed that the PZT films prepared with a laser fluence of 2 Jcm{sup -2} on YBCO/MgO(100) substrate at a wide temperature range of 550-680 C have a perovskite (001) structure. At the same laser fluence, the PZT films prepared on Pt/MgO(100) substrate have a perovskite (001) structure only at 650 C. The polarization-electric field (P-E) characteristics and fatigue properties of PZT thin films were measured by the Sawyer-Tower circuit. The remnant polarization and coercive field have been found to be P{sub r}=15 {mu}C cm{sup -2}, 30 {mu}C cm{sup -2} and E{sub c}=200 kV cm{sup -1}, 100 kV cm{sup -1} for Au/PZT/Pt/MgO and Au/PZT/YBCO/MgO correspondingly. The remnant polarization of Au/PZT/YBCO/MgO thin film was reduced to one-half after about 10{sup 8} cycles of switching. (orig.) 7 refs.

  17. Properties of tungsten films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

    1986-01-01

    High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

  18. DC magnetron sputtering prepared Ag-C thin film anode for thin film lithium ion microbatteries

    International Nuclear Information System (INIS)

    Li, Y.; Tu, J.P.; Shi, D.Q.; Huang, X.H.; Wu, H.M.; Yuan, Y.F.; Zhao, X.B.

    2007-01-01

    An Ag-C thin film was prepared by DC magnetron co-sputtering, using pure silver and graphite as the targets. The microstructure and morphology of the deposited thin film were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Electrochemical performances of the Ag-C thin film anode were investigated by means of discharge/charge and cyclic voltammogram (CV) tests in model cells. The electrochemical impedance spectrum (EIS) characteristics and the chemical diffusion coefficient, D Li of the Ag-C thin film electrode at different discharging states were discussed. It was believed that the excellent cycling performance of the Ag-C electrode was ascribed to the good conductivity of silver and the volume stability of the thin film

  19. Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Zhou Kai

    2010-01-01

    Full Text Available Abstract The structure of vertically aligned carbon nanotubes (CNTs severely depends on the properties of pre-prepared catalyst films. Aiming for the preparation of precisely controlled catalyst film, atomic layer deposition (ALD was employed to deposit uniform Fe2O3 film for the growth of CNT arrays on planar substrate surfaces as well as the curved ones. Iron acetylacetonate and ozone were introduced into the reactor alternately as precursors to realize the formation of catalyst films. By varying the deposition cycles, uniform and smooth Fe2O3 catalyst films with different thicknesses were obtained on Si/SiO2 substrate, which supported the growth of highly oriented few-walled CNT arrays. Utilizing the advantage of ALD process in coating non-planar surfaces, uniform catalyst films can also be successfully deposited onto quartz fibers. Aligned few-walled CNTs can be grafted on the quartz fibers, and they self-organized into a leaf-shaped structure due to the curved surface morphology. The growth of aligned CNTs on non-planar surfaces holds promise in constructing hierarchical CNT architectures in future.

  20. High quality antireflective ZnS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Tec-Yam, S.; Rojas, J.; Rejón, V.; Oliva, A.I.

    2012-01-01

    Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl 2 , NH 4 NO 3 , and CS(NH 2 ) 2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality. -- Highlights: ► High quality ZnS thin films were prepared by chemical bath deposition (CBD). ► Better CBD-ZnS films were achieved by using 0.9 M-KOH concentration. ► Reduction in the reflectance was obtained for ZnS films used as buffer layers.

  1. Instantaneous preparation of CuInSe2 films from elemental In, Cu, Se particles precursor films in a non-vacuum process

    International Nuclear Information System (INIS)

    Kaigawa, R.; Uesugi, T.; Yoshida, T.; Merdes, S.; Klenk, R.

    2009-01-01

    CuInSe 2 (CIS) films are successfully prepared by means of non-vacuum, instantaneous, direct synthesis from elemental In, Cu, Se particles precursor films without prior synthesis of CIS nanoparticle precursors and without selenization with H 2 Se or Se vapor. Our precursor films were prepared on metal substrates by spraying the solvent with added elemental In, Cu, and Se particles. Precursor films were instantaneously sintered using a spot welding machine. When the electric power was fixed to 0.6 kVA, elemental In, Cu, or Se peaks were not observed and only peaks of CIS are observed by X-ray diffraction (XRD) on the film sintered for 7/8 s. We can observe XRD peaks indicative of the chalcopyrite-type structure, such as (101), (103) and (211) diffraction peaks. We conclude that the synthesized CIS crystals have chalcopyrite-type structure with high crystallinity

  2. Preparation of S-sulfo albumin film and its cell adhesive property

    International Nuclear Information System (INIS)

    Yamazoe, Hironori; Yamauchi, Kiyoshi; Tanabe, Toshizumi

    2009-01-01

    Recently, large-scale production of the pharmaceutical grade recombinant human serum albumin was achieved, and several clinical trials have proved its safety and efficacy. Albumin is thought to be a candidate for a safe biopolymer sources for application to biomaterials. In this study, we treated albumin with sodium sulfite and sodium tetrathionate to give S-sulfo albumin, which was found to loose native albumin structure by CD spectra analysis and dye-binding assay. A water-insoluble S-sulfo albumin films were prepared by drying S-sulfo albumin solution and subsequent reformation of disulfide bonds by the oxidation with iodine. Ultimate strength, ultimate elongation and Young's modulus of S-sulfo albumin film prepared at room temperature were 3.3 ± 0.4 MPa, 30.8 ± 3.2% and 40.8 ± 3.3 MPa before oxidative treatment and changed to 13.8 ± 4.2 MPa, 5.6 ± 2.8% and 401.7 ± 15.3 MPa after oxidative treatment. When the film was prepared at 60 deg. C, similar tendency was observed. Thus, the disulfide bonds formation between albumin molecules by oxidative treatment converted the film stronger and stiffer. Cell adhesion and proliferation on the films were evaluated using mouse L929 fibroblast cells. Cell adhesion largely depended on the albumin structure; that is, cells did not attach to native albumin coated surfaces, while cell adhesion and proliferation occurred on the S-sulfo albumin films which lost their native albumin structure. Eighty percent of seeded cells were adhered on S-sulfo albumin films and proliferated well in a similar manner to those on the conventional culture dish. Our results indicate that S-sulfo albumin is a favorable cell culture substrate.

  3. Composite Films Formed by Cellulose nanocrystals and Latex Nanoparticles: Optical, Structural, and Mechanical Properties

    Science.gov (United States)

    Vollick, Brandon McRae

    This thesis describes the preparation of iridescent, birefringent, composite films composed of cellulose nanocrystals (CNCs), latex nanoparticles (NPs) and a NP crosslinker; hexanediamine (HDA). First, aqueous suspensions were prepared with varying quantities of CNCs, NPs and HDA before equilibrating for one week. The cholesteric (Ch) phase was then cast and dried into a film. The optical, structural and mechanical properties of the film was analyzed. Second, films with identical compositions of CNCs, NPs, and HDA were fabricated in three different ways to yield films of different morphology, (i) fast drying of an isotropic suspension, yielding an isotropic film, (ii) slow drying of an isotropic suspension, yielding a partially Ch films, (iii) slow drying of an equilibrated suspension, yielding a highly Ch film. The optical and mechanical properties of the films was analyzed.

  4. ITO thin films prepared by a microwave heating

    International Nuclear Information System (INIS)

    Okuya, Masayuki; Ito, Nobuyuki; Shiozaki, Katsuyuki

    2007-01-01

    ITO thin films were prepared by irradiating 2.45 GHz of microwave with an output power of 700 W using a commercial kitchen microwave oven. A substrate temperature went up and down rapidly between 100 and 650 deg. C in a minute by a dielectric loss of SnO 2 layer pre-deposited on a glass substrate. We found that the electrical and optical properties of films were affected by the atmosphere in a microwave irradiation, while the sintering was completed within a few minutes. Although the electrical resistivity was not reduced below 5.0 x 10 -4 Ω.cm in this study, the results lead to the possibility of a practical rapid synthesis of ITO transparent conducting oxide films

  5. Preparation and property of UV-curable polyurethane acrylate film filled with cationic surfactant treated graphene

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jinghong; Cai, Xia; Shen, Fenglei, E-mail: shenfenglei@suda.edu.cn

    2016-08-30

    Highlights: • The non-covalent modification of graphene maintains the intrinsic structure of graphene compared with the covalent functionalization of graphene. • The initial degradation temperature of nanocomposite film increases by 57 °C which is much higher than that of PUA nanocomposite previously reported. • The nanocomposite film exhibits improved dielectric property and electrical conductivity. • The outstanding performance of CTAB-G/PUA films will open up enormous opportunities for applications in various regions such as high temperature or electrical field. - Abstract: The preparation of nanocomposite films composed of UV-curable polyurethane acrylate (PUA) and modified graphene were demonstrated in this paper. Cetyl trimethyl ammonium bromide modified graphene (CTAB-G) was prepared via intercalation of cationic surfactant and subsequently incorporated into PUA by UV curing technology. Fourier transform infrared spectra, wide-angle X-ray diffraction, scanning electron microscopy and transmission electron microscopy were used to characterize the structure and morphology of CTAB-G, as well as CTAB-G/PUA nanocomposite films. The results revealed that the CTAB-G sheets were layer-by-layer structure and dispersed uniformly in PUA matrix. Thermal gravimetric analysis showed that the thermal stabilities of UV-curable PUA nanocomposite films in this work were much higher than that of PUA nanocomposites previously reported. Dynamic mechanical analysis indicated that the dynamic mechanical properties of nanocomposite films were greatly enhanced in the presence of modified graphene sheets. In addition, the CTAB-G/PUA nanocomposite films exhibited improved dielectric properties and electrical conductivities compared with the pure PUA.

  6. Nanostructured ZnO thin films prepared by sol–gel spin-coating

    Energy Technology Data Exchange (ETDEWEB)

    Heredia, E., E-mail: heredia.edu@gmail.com [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Bojorge, C.; Casanova, J.; Cánepa, H. [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Craievich, A. [Instituto de Física, Universidade de São Paulo, Cidade Universitária, 66318 São Paulo, SP (Brazil); Kellermann, G. [Universidade Federal do Paraná, 19044 Paraná (Brazil)

    2014-10-30

    Highlights: • ZnO films synthesized by sol–gel were deposited by spin-coating on flat substrates. • Structural features of ZnO films with several thicknesses were characterized by means of different techniques. • The thicknesses of different ZnO thin films were determined by means of FESEM and AFM. • The nanoporous structures of ZnO thin films were characterized by GISAXS using IsGISAXS software. • The average densities of ZnO thin films were derived from (i) the critical angle in 1D XR patterns, (ii) the angle of Yoneda peak in 2D GISAXS images, (iii) minimization of chi2 using IsGISAXS best fitting procedure. - Abstract: ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films – ranging from 40 nm up to 150 nm – was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30–40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8–0.9 range and average diameter along the sample surface plane in the 5–7 nm range.

  7. Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

    Directory of Open Access Journals (Sweden)

    Mia Nasrul Haque

    2017-10-01

    Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

  8. Zinc oxide films impurified with Ti and prepared by the Sol-gel method

    International Nuclear Information System (INIS)

    Tirado G, S.; Cazares R, J.M.; Maldonado, A.

    2006-01-01

    Titanium-doped zinc oxide thin films have been prepared on silicon substrate using the Sol-Gel technique. The structural, morphology, electrical and optical properties of such thin films were studied as a function of titanium concentration (0.5, 1 and 1.5 %) and the thin films thickness. Zinc acetate dihydrate and titanium (VI)-oxy acetylacetonate were used as precursor materials, using 2-methoxyethanol and monoethanolamine as via. The X-ray diffraction spectra show polycrystalline films in all the cases. It can see for all the thin films a preferential growth along the (002) planes where the titanium concentration and also the thin films thickness play an important rule. No structural changes are observed at all. The surface morphology studied shows as the grain size decreases when thin thickness is increases. For titanium concentration of 0.5, 1 and 1.5 % values the grains size increase also. The thin films thickness for titanium concentration of 1.5 % was 500 nm (4v), 400 nm (3v), 180 nm (2v) and 130 nm (1v), values obtained from cross-section micrographs. Highly resistive samples are obtained for substrate soda-lime even showing high transmittance. Better physical properties are required for gas sensors or semitransparent electrodes and other possible applications. (Author)

  9. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Science.gov (United States)

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  10. Preparation of molybdenum oxide thin films by MOCVD

    International Nuclear Information System (INIS)

    Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

    2007-01-01

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

  11. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  12. Preparation and Characterization of Formalated Polyvinyl Alcohol Hydrogel Film

    International Nuclear Information System (INIS)

    Than Than Aye; Nyunt Win; San Myint

    2011-12-01

    A feasible hydrogen film was prepared from polyvinyl alcohol (PVA) sample. The effect of chemical grafting on polyvinyl alcohol film was studied. Polyvinyl alcohol sample was mixed with distilled water and autoclaved at 121C for 60 minutes. An aqueous solution of polyvinyl alcohol was casted into a steel plate and dried for a certain time at room temperature. The obtained PVA film was immersed in formalation bath containing aqueous formaldehyde, sulphuric acid, anhydrous sodium sulphate with a weight ratio of (64:95:300) and 1 liter of distilled water at 60C for various hours. Effect of formalation time was studied varying 6, 12, 24, 36 and 48 hours. Degree of formalation was also evaluated. Physical properties of the hydrogel film such as gel fraction, degree of swelling and mechanical properties such as tensile strength, elongation and hardness were determined before and after formalation of the PVA film. Fourier Transform Infrared Spectroscopic (FTIR) analysis, Thermogravimetric / Differential thermal analysis (DTA / TG) were also studied for characterization. It was found that the appropriate condition for formalation was occured at 24 hours formalation time of with the calculated degree of formalation 65.35% with the determined values (9.04 Mpa) for tensile strength, (241.92%) for elongation, (45.30 Shore D) for hardness, (280.36%) for degree of swelling and (68.32%) for gel fraction.

  13. Deposition techniques for the preparation of thin film nuclear targets

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1987-07-01

    This review commences with a brief description of the basic principles that regulate vacuum evaporation and the physical processes involved in thin film formation, followed by a description of the experimental methods used. The principle methods of heating the evaporant are detailed and the means of measuring and controlling the film thickness are elucidated. Types of thin film nuclear targets are considered and various film release agents are listed. Thin film nuclear target behaviour under ion-bombardment is described and the dependence of nuclear experimental results upon target thickness and uniformity is outlined. Special problems associated with preparing suitable targets for lifetime measurements are discussed. The causes of stripper-foil thickening and breaking under heavy-ion bombardment are considered. A comparison is made between foils manufactured by a glow discharge process and those produced by vacuum sublimation. Consideration is given to the methods of carbon stripper-foil manufacture and to the characteristics of stripper-foil lifetimes are considered. Techniques are described that have been developed for the fabrication of special targets, both from natural and isotopically enriched material, and also of elements that are either chemically unstable, or thermally unstable under irradiation. The reduction of metal oxides by the use of hydrogen or by utilising a metallothermic technique, and the simultaneous evaporation of reduced rare earth elements is described. A comprehensive list of the common targets is presented

  14. Effect of ion nitriding on the crystal structure of 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} thin-films prepared by the sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz, A.L. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)]. E-mail: alortiz@unex.es; Diaz-Parralejo, A. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Borrero-Lopez, O. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain); Guiberteau, F. [Departamento de Electronica e Ingenieria Electromecanica, Escuela de Ingenierias Industriales, Universidad de Extremadura, Badajoz 06071 (Spain)

    2006-06-30

    We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y{sub 2}O{sub 3}-doped ZrO{sub 2} (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr{sub 0.94}Y{sub 0.06}O{sub 1.72}N{sub 0.17} stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice.

  15. Preparation of polyvinyl alcohol graphene oxide phosphonate film and research of thermal stability and mechanical properties.

    Science.gov (United States)

    Li, Jihui; Song, Yunna; Ma, Zheng; Li, Ning; Niu, Shuai; Li, Yongshen

    2018-05-01

    In this article, flake graphite, nitric acid, peroxyacetic acid and phosphoric acid are used to prepare graphene oxide phosphonic and phosphinic acids (GOPAs), and GOPAs and polyvinyl alcohol (PVA) are used to synthesize polyvinyl alcohol graphene oxide phosphonate and phosphinate (PVAGOPs) in the case of faint acidity and ultrasound irradiation, and PVAGOPs are used to fabricate PVAGOPs film, and the structure and morphology of GOPAs, PVAGOPs and PVAGOPs film are characterized, and the thermal stability and mechanical properties of PVAGOPs film are investigated. Based on these, it has been proved that GOPAs consist of graphene oxide phosphonic acid and graphene oxide phosphinic acid, and there are CP covalent bonds between them, and PVAGOPs are composed of GOPAs and PVA, and there are six-member lactone rings between GOPAs and PVA, and the thermal stability and mechanical properties of PVAGOPs film are improved effectively. Copyright © 2018 Elsevier B.V. All rights reserved.

  16. Preparation and water absorption of cross-linked chitosan/silk fibroin blend films

    Energy Technology Data Exchange (ETDEWEB)

    Suesat, Jantip; Rujiravanit, Ratana [Chulalongkorn University, The Petroleum and Petrochemical College, Bangkok (Thailand); Jamieson, Alexander M. [Case Western Reserve Univ., Department of Macromolecular Science, Cleveland (United States); Tokura, Seiichi [Kansai Univ., Faculty of Engineering, Osaka (Japan)

    2001-03-01

    Natural polymer blend films composed of chitosan and silk fibroin were prepared by varying the ratio of chitosan to silk fibroin, with and without glutaraldehyde as a crosslinking agent. The effects of the ratio of chitosan to silk fibroin and crosslinking agent on swelling behavior of the blend films were studied. For the swelling behavior, the blend films exhibited a dramatic change in the degree of swelling when immersed in acidic solutions. The degree of swelling of the films increased as the chitosan content increased; the blend film with 80% chitosan content had the maximum degree of swelling. It appeared that crosslinking had occurred in the blend films which helped the films to retain their three dimensional structure. In addition, FTIR spectra of the films showed evidence of hydrogen bonding interaction between chitosan and silk fibroin. For the effect of salt type, the films were immersed in various types of aqueous salt solutions, viz NaCl, LiCl, CaCl{sub 2}, AlCl{sub 3}, and FeCl{sub 3}. The films immersed in AlCl{sub 3} and FeCl{sub 3} aqueous solutions gave the maximum degree of swelling. The effects of AlCl{sub 3} and FeCl{sub 3} concentrations on swelling behavior were also investigated. It was found that the maximum degree of swelling of the films occurred at 1.0 x 10{sup -2} M of AlCl{sub 3} and FeCl{sub 3} aqueous solutions. (author)

  17. Preparation and characterization of porous carbon–titania nanocomposite films as solar selective absorbers

    International Nuclear Information System (INIS)

    Cheng, B.; Wang, K.K.; Wang, K.P.; Li, M.; Jiang, W.; Cong, B.J.; Song, C.L.; Jia, S.H.; Han, G.R.; Liu, Y.

    2015-01-01

    Highlights: • The nanocomposites porous C/TiO 2 film were fabricated via PIPS method. • The HRTEM reveals the size of carbon nanoparticles is about 1.1 nm. • The PVP advantages residual carbon content but suppresses its crystallization. • The film exhibits high α (0.928–0.959) with low ε (0.074–0.105) for single layer. - Abstract: Newly proposed selective solar absorbers of porous carbon–titania nanocomposite films with a well-defined interconnected macropores structure were prepared via a polymer-assisted photopolymerization-induced phase-separation method. The microstructure and optical properties of as-deposited nanocomposite films were characterized and discussed in detail. The results show that non-ionic water-soluble polymer polyvinylpyrrolidone works as a sol modifier advantaging the mean size of the interconnected macropores, residual carbon content, and films thickness, but suppresses the order degree of the carbon remained in the films. The high-resolution transmission electron microscopy demonstrated that a small amount of graphite particles with size of around 1.1 nm embedded in the cavity of the porous while the wall of the porous consists of amorphous carbon and titania composites. The single layer of as-prepared porous C/TiO 2 nanocomposite films exhibits high solar absorptance (α = 0.928–0.959) with low thermal emittance (ε = 0.074–0.105), yielding an optimized photothermal conversion efficiency η = α − ε of 0.864 corresponding to a film thickness of around 338 nm, indication of such film is fair enough to serve as an excellent solar absorber

  18. Electronic structure of semiconductor quantum films

    International Nuclear Information System (INIS)

    Zhang, S.B.; Yeh, C.; Zunger, A.

    1993-01-01

    The electronic structure of thin (≤30 A) free-standing ideal films of Si(001), Si(110), and GaAs(110) is calculated using a plane-wave pseudopotential description. Unlike the expectation based on the simple effective-mass model, we find the following. (i) The band gaps of (001) quantum films exhibit even-odd oscillation as a function of the number N of monolayers. (ii) In addition to sine-type envelope functions which vanish at the film boundaries, some states have cosine envelope functions with extrema at boundaries. (iii) Even-layer Si(001) films exhibit at the valence-band maximum a state whose energy does not vary with the film thickness. Such zero confinement states have constant envelope throughout the film. (iv) Optical transitions in films exhibit boundary-imposed selection rules. Furthermore, oscillator strengths for pseudodirect transitions in the vicinity of forbidden direct transitions can be enhanced by several orders of magnitude. These findings, obtained in direct supercell calculations, can be explained in terms of a truncated crystal (TC) analysis. In this approach the film's wave functions are expanded in terms of pairs of bulk wave functions exhibiting a destructive interference at the boundaries. This maps the eigenvalue spectra of a film onto the bulk band structure evaluated at special k points which satisfy the boundary conditions. We find that the TC representation reproduces accurately the above-mentioned results of direct diagonalization of the film's Hamiltonian. This provides a simple alternative to the effective-mass model and relates the properties of quantum structures to those of the bulk material

  19. Novel silk fibroin films prepared by formic acid/hydroxyapatite dissolution method

    International Nuclear Information System (INIS)

    Ming, Jinfa; Liu, Zhi; Bie, Shiyu; Zhang, Feng; Zuo, Baoqi

    2014-01-01

    Bombyx mori silk fibroin from the silkworm was firstly found to be soluble in formic acid/hydroxyapatite system. The rheological behavior of silk fibroin solution was significantly influenced by HAp contents in dissolved solution. At the same time, silk fibroin nanofibers were observed in dissolved solution with 103.6 ± 20.4 nm in diameter. Moreover, the structure behavior of SF films prepared by formic acid/hydroxyapatite dissolution method was examined. The secondary structure of silk fibroin films was attributed to silk II structure (β-sheet), indicating that the hydroxyapatite contents in dissolved solution were not significantly affected by the structure of silk fibroin. The X-ray diffraction results exhibited obviously hydroxyapatite crystalline nature existing in silk fibroin films; however, when the hydroxyapatite content was 5.0 wt.% in dissolved solution, some hydroxyapatite crystals were converted to calcium hydrogen phosphate dehydrate in silk fibroin dissolution process. This result was also confirmed by Fourier transform infrared analysis and DSC measurement. In addition, silk fibroin films prepared by this dissolution method had higher breaking strength and extension at break. Based on these analyses, an understanding of novel SF dissolution method may provide an additional tool for designing and synthesizing advanced materials with more complex structures, which should be helpful in different fields, including biomaterial applications. - Highlights: • SF fibers were firstly successfully dissolved in FA/HAp solution. • The rheological behavior of SF solution was significantly influenced by HAp contents. • SF nanofibrils were observed in FA/HAp solution with 103.6 ± 20.4 nm in diameter. • SF films prepared by FA/HAp dissolution method had higher mechanical properties

  20. Novel silk fibroin films prepared by formic acid/hydroxyapatite dissolution method

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Jinfa, E-mail: jinfa.ming@gmail.com [National Engineering Laboratory for Modern Silk, Soochow University, Suzhou 215123 (China); College of Textile and Clothing Engineering, Soochow University, Suzhou 215021 (China); Liu, Zhi; Bie, Shiyu [National Engineering Laboratory for Modern Silk, Soochow University, Suzhou 215123 (China); College of Textile and Clothing Engineering, Soochow University, Suzhou 215021 (China); Zhang, Feng [Jiangsu Province Key Laboratory of Stem Cell Research, Medical College, Soochow University, Suzhou 215006 (China); Zuo, Baoqi, E-mail: bqzuo@suda.edu.cn [National Engineering Laboratory for Modern Silk, Soochow University, Suzhou 215123 (China); College of Textile and Clothing Engineering, Soochow University, Suzhou 215021 (China)

    2014-04-01

    Bombyx mori silk fibroin from the silkworm was firstly found to be soluble in formic acid/hydroxyapatite system. The rheological behavior of silk fibroin solution was significantly influenced by HAp contents in dissolved solution. At the same time, silk fibroin nanofibers were observed in dissolved solution with 103.6 ± 20.4 nm in diameter. Moreover, the structure behavior of SF films prepared by formic acid/hydroxyapatite dissolution method was examined. The secondary structure of silk fibroin films was attributed to silk II structure (β-sheet), indicating that the hydroxyapatite contents in dissolved solution were not significantly affected by the structure of silk fibroin. The X-ray diffraction results exhibited obviously hydroxyapatite crystalline nature existing in silk fibroin films; however, when the hydroxyapatite content was 5.0 wt.% in dissolved solution, some hydroxyapatite crystals were converted to calcium hydrogen phosphate dehydrate in silk fibroin dissolution process. This result was also confirmed by Fourier transform infrared analysis and DSC measurement. In addition, silk fibroin films prepared by this dissolution method had higher breaking strength and extension at break. Based on these analyses, an understanding of novel SF dissolution method may provide an additional tool for designing and synthesizing advanced materials with more complex structures, which should be helpful in different fields, including biomaterial applications. - Highlights: • SF fibers were firstly successfully dissolved in FA/HAp solution. • The rheological behavior of SF solution was significantly influenced by HAp contents. • SF nanofibrils were observed in FA/HAp solution with 103.6 ± 20.4 nm in diameter. • SF films prepared by FA/HAp dissolution method had higher mechanical properties.

  1. Electrical and optical properties of CZTS thin films prepared by SILAR method

    Directory of Open Access Journals (Sweden)

    J. Henry

    2016-03-01

    Full Text Available In the present work, Cu2ZnSnS4 (CZTS thin film was deposited onto the glass substrate by simple and economic SILAR method and its structural, morphological, optical and electrical properties were analyzed. X-ray diffraction (XRD analysis confirms the formation of CZTS with kesterite structure and the average crystallite size is found to be 142 nm. Scanning electron microscope (SEM image shows that the film has homogeneous, agglomerated surface without any cracks. The prepared CZTS film shows good optical absorption (104 cm−1 in the visible region and the optical band gap energy is found to be quite close to the optimum value of about 1.54 eV for solar cell application. The refractive index of the prepared film is found to be 2.85. The electrical resistivity of the film is found to be ∼10−2 Ω cm at room temperature.

  2. Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

    Science.gov (United States)

    Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan

    2013-05-01

    WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

  3. Preparation of poly(vinylbenzyl chloride)-grafted PFA film by a simultaneous irradiation grafting method

    International Nuclear Information System (INIS)

    Fei, Geng; Shin, Jun Hwa; Nho, Young Chang; Lee, Youn Sik

    2009-01-01

    In this study, PFA-g-PVBC films were prepared by a radiation grafting of vinylbenzyl chloride (VBC) monomer onto poly(tetrafluoroethylene-co-perfluoro propyl vinyl ether) (PFA) films by simultaneous irradiation method. IR, TGA, and SEM-EDX instruments were utilized to confirm the successful preparation of the grafted film. The effects of several irradiation conditions, including the dose, VBC concentration, and film thickness on the degree of grafting of PFA-g-PVBC film were investigated

  4. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    Science.gov (United States)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  5. Luminescence and structural study of porous silicon films

    Science.gov (United States)

    Xie, Y. H.; Wilson, W. L.; Ross, F. M.; Mucha, J. A.; Fitzgerald, E. A.; Macaulay, J. M.; Harris, T. D.

    1992-03-01

    A combination of photoluminescence, TEM, and Fourier transform IR spectroscopy is used to investigate the luminescence properties of 3-micron thick, strongly emitting, and highly porous silicon films. TEMs indicate that these samples have structures of predominantly 6-7-nm size clusters. In the as-prepared films, there is a significant concentration of Si-H bonds which is gradually replaced by Si-O bonds during prolonged aging in air. Upon optical excitation these films exhibit strong visible emission, peaking at about 690 nm. The excitation edge is shown to be emission-wavelength dependent, revealing the inhomogeneous nature of both the initially photoexcited and luminescing species. The correlation of the spectral and structural information suggest that the source of the large blue shift of the visible emission compared to the bulk Si bandgap energy is due to quantum confinement in the nanometer-size Si clusters.

  6. Nanocrystalline CdS{sub 1−x}Se{sub x} alloys as thin films prepared by chemical bath deposition: Effect of x on the structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Ramirez, E.A. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Hernandez-Perez, M.A., E-mail: mhernandezp0606@ipn.mx [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Rangel-Salinas, E. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico)

    2014-12-05

    Highlights: • CdS1−xSe{sub x} films with tunable structural and optical properties were grown by CBD. • Thin films are composed by a solid solution of the CdS{sub 1−x}Se{sub x} ternary alloy. • Crystal size, band gap and photoluminescence signal, decrease with the composition. • Ternary alloys show hexagonal phase with preferential orientation on (0 0 2) plane. • Films with x ⩾ 0.5 show semi-spherical grains composed by nanoworms structures. - Abstract: CdS{sub 1−x}Se{sub x} thin films were deposited on Corning glass substrates at 75 °C by chemical bath deposition (CBD) varying the composition “x” from 0 to 1 at a constant deposition time of 120 min. The composition of the films was adjusted by modifying the concentration as well as the ratio of the precursors. The morphological, compositional, structural and optical properties of the films were analyzed using several techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), UV–Vis Spectroscopy (UV–Vis) and Photoluminescence (PL). The films grow as layers following the ion by ion mechanism, the density of the films decreases with x. Films are constituted by clusters (100–600 nm in diameter) of semispherical particles with sizes fluctuating from 10 to 20 nm. For x ⩾ 0.5 the particles are well-arranged in a “worm-like” structure. All the films are polycrystalline, to x = 0 (CdS) the cubic phase is present, the increase of composition promotes the formation of hexagonal phase or a mixture of both cubic and hexagonal phases. Preferential orientation in the (1 0 0) or (0 0 2) plane is observed. The crystal size decreases from 20 to 6 nm when x is increased. The optical properties can be easily tuned by adjusting the composition. Optical absorption analysis shows that the band gap (E{sub g}) value shifts to red in function of x (from 2.47 to 1.99 eV). Photoluminescence signal changes as “x” varies showing a regular behavior

  7. Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

    International Nuclear Information System (INIS)

    Zhu, J; Li, T L; Pan, B; Zhou, L; Liu, Z G

    2003-01-01

    ZrO 2 thin films were fabricated in O 2 ambient and in N 2 ambient by pulsed laser deposition (PLD), respectively. X-ray diffraction revealed that films prepared at 400 deg. C remained amorphous. The dielectric properties of amorphous ZrO 2 films were investigated by measuring the capacitance-frequency characteristics of Pt/ZrO 2 /Pt capacitor structures. The dielectric constant of the films deposited in N 2 ambient was larger than that of the films deposited in O 2 ambient. The dielectric loss was lower for films prepared in N 2 ambient. Atom force microscopy investigation indicated that films deposited in N 2 ambient had smoother surface than films deposited in O 2 ambient. Capacitance-voltage and current-voltage characteristics were studied. The equivalent oxide thickness (EOT) of films with 6.6 nm physical thickness deposited in N 2 ambient is lower than that of films deposited in O 2 ambient. An EOT of 1.38 nm for the film deposited in N 2 ambient was obtained, while the leakage current density was 94.6 mA cm -2 . Therefore, ZrO 2 thins deposited in N 2 ambient have enhanced dielectric properties due to the incorporation of nitrogen which leads to the formation of Zr-doped nitride interfacial layer, and is suggested to be a potential material for alternative high-k (high dielectric constant) gate dielectric applications

  8. Electroplated Fe-Co-Ni films prepared from deep-eutectic-solvent-based plating baths

    Directory of Open Access Journals (Sweden)

    Takeshi Yanai

    2016-05-01

    Full Text Available We fabricated soft magnetic films from DES-based plating baths, and investigated magnetic properties of the plated films. The plating baths were obtained by stirring the mixture of choline chloride, ethylene glycol, FeCl2 ⋅ 4H2O, NiCl2 ⋅ 6H2O and CoCl2 ⋅ 6H2O. The composition of the electroplated film depended on the amount of the reagent in the plating bath, and we consequently obtained the films with various composition. The current efficiency of the plating process shows high values (> 88 % in the wide composition range. The soft magnetic films with low coercivity were obtained at the Fe compositions of ≈ 30 at.% and > 80 at.%, and we found that low coercivity could be realized by the control of the film composition. We also found that the Fe-rich films prepared from DES-based plating bath have some advantages as a soft magnetic phase for a nanocomposite magnet due to their high saturation magnetization and very fine crystal structure.

  9. Preparation of n-type semiconductor SnO2 thin films

    International Nuclear Information System (INIS)

    Rahal, Achour; Benramache, Said; Benhaoua, Boubaker

    2013-01-01

    We studied fluorine-doped tin oxide on a glass substrate at 350°C using an ultrasonic spray technique. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and NaOH were used as the starting material, dopant source, solvent and stabilizer, respectively. The SnO 2 : F thin films were deposited at 350°C and a pending time of 60 and 90 s. The as-grown films exhibit a hexagonal wurtzite structure and have (101) orientation. The G = 31.82 nm value of the grain size is attained from SnO 2 : F film grown at 90 s, and the transmittance is greater than 80% in the visible region. The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58 (Ω·cm) −1 , with the maximum activation energy value of the films being found to measure 22.85 meV, indicating that the films exhibit an n-type semiconducting nature. (semiconductor materials)

  10. Preparation and properties of Starch-g-PLA/poly(vinyl alcohol) composite film.

    Science.gov (United States)

    Hu, Yingmo; Wang, Qingling; Tang, Mingru

    2013-07-25

    Starch/lactic acid graft copolymer (Starch-g-PLA) was prepared by the in situ copolymerization of starch grafted with lactic acid catalyzed with sodium hydroxide, and then mixed with poly(vinyl alcohol) (PVA) to get composite films. The structures of the graft copolymer and composite films were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The mechanical properties, water resistance, and thermal stability were also investigated. It was found that the compatibility of Starch-g-PLA and PVA was better than that of starch and PVA in the composite films. The tensile strength and elongation at break of the Starch-g-PLA/PVA composite film increased by 69.15% and 84.22%, respectively, while the water absorption decreased by 50.39%, which overcame the shortcomings of hydrophilicity and poor mechanical properties of Starch/PVA film. Thermogravimetric analysis (TGA) also showed that the thermal stability of Starch-g-PLA/PVA film was improved compared with Starch/PVA film. Copyright © 2013 Elsevier Ltd. All rights reserved.

  11. Self-assembled metal nano-multilayered film prepared by co-sputtering method

    Science.gov (United States)

    Xie, Tianle; Fu, Licai; Qin, Wen; Zhu, Jiajun; Yang, Wulin; Li, Deyi; Zhou, Lingping

    2018-03-01

    Nano-multilayered film is usually prepared by the arrangement deposition of different materials. In this paper, a self-assembled nano-multilayered film was deposited by simultaneous sputtering of Cu and W. The Cu/W nano-multilayered film was accumulated by W-rich layer and Cu-rich layer. Smooth interfaces with consecutive composition variation and semi-coherent even coherent relationship were identified, indicating that a spinodal-like structure with a modulation wavelength of about 20 nm formed during co-deposition process. The participation of diffusion barrier element, such as W, is believed the essential to obtain the nano-multilayered structure besides the technological parameters.

  12. Role of Annealing Temperature on Morphology of Alumina Thin Film Prepared by Wet-Chemical Method

    Directory of Open Access Journals (Sweden)

    Manju Pandey

    2015-03-01

    Full Text Available In this paper, we reported the compositional, morphological and structural properties of the alumina(Al2O3 thin films prepared by sol-gel technique and annealed between 800 0C to 1200 0C for 1-hour in an air atmosphere. The deposited films were polycrystalline in nature. Thin films were found uniform and adherent to the alumina substrate. Effect of annealing temperature on structural parameters such as pore size and surface area were calculated. The result indicates that pore size and surface area was decreased by increasing annealing temperature. The material characterization was done by field emission scanning electron microscope (SEM, atomic force microscopy (AFM and Brunaur, Emmet and Teller (BET.

  13. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  14. The effect of laser irradiation on electrical and structural properties of ZnO thin films

    Directory of Open Access Journals (Sweden)

    P Kameli

    2013-03-01

    Full Text Available  In this paper, ZnO thin film was prepared by sol-gel process on glass substrates. The deposited films were dried at 100 and 240 ˚C and then annealed at 300, 400 and 500 ˚C. The two-probe measurement showed that resistance of as-prepared films is very high. The KrF excimer (λ=248 nm laser irradiation with 1000 pulses, frequency of 1 Hz and 90 mJ/cm2 energy on surface of film resulted in the reduction of the films electrical resistance. X-ray diffraction (XRD patterns confirmed the improved hexagonal wurtzite structure of film, and AFM and FE-SEM analyses showed regular and spherical grain was formed on the surface. The particle size was increased from ~10 to ~30 nm after leaser irradiation. Generally, it was showed that electrical, structural and morphological properties of films improve considerably by laser irradiation.

  15. TiO2 and Cu/TiO2 Thin Films Prepared by SPT

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2015-12-01

    Full Text Available Titanium oxide (TiO2 and copper (Cu doped titanium oxide (Cu/TiO2 thin films have been prepared by spray pyrolysis technique. Titanium chloride (TiCl4 and copper acetate (Cu(CH3COO2.H2O were used as source of Ti and Cu. The doping concentration of Cu was varied from 1-10 wt. %. The X-ray diffraction studies show that TiO2 thin films are tetragonal structure and Cu/TiO2 thin films implies CuO has present with monoclinic structure. The optical properties of the TiO2 thin films have been investigated as a function of Cu-doping level. The optical transmission of the thin films was found to increase from 88 % to 94 % with the addition of Cu up to 8 % and then decreases for higher percentage of Cu doping. The optical band gap (Eg for pure TiO2 thin film is found to be 3.40 eV. Due to Cu doping, the band gap is shifted to lower energies and then increases further with increasing the concentration of Cu. The refractive index of the TiO2 thin films is found to be 2.58 and the variation of refractive index is observed due to Cu doped. The room temperature resistivity of the films decreases with increasing Cu doping and is found to be 27.50 - 23.76 W·cm. It is evident from the present study that the Cu doping promoted the thin film morphology and thereby it is aspect for various applications.

  16. Preparation of the Crosslinked Polyethersulfone Films by High Temperature Electron-Beam Irradiation

    International Nuclear Information System (INIS)

    Li, J.

    2006-01-01

    The aromatic polymers, mainly so called engineering plastics, were famed for the good stability under irradiation. However, high temperature irradiation of the aromatic polymers can result the crosslinked structure, due to the improved molecular mobility. Polyethersulfone (PES) is a wide used engineering plastic because of the high performance and high thermal stability. PES films were irradiated by electron-beam under nitrogen atmosphere above the glass transition temperature and then the covalently crosslinked PES (RX-PES) films were obtained. The irradiations were also performed at ambient temperature for comparison. The network structure formation of the RX-PES films was confirmed by the appearance of the gel, which were measured by soaking the irradiated PES films in the N,N-dimethylformamide (DMF) at room temperature. When the PES films were irradiated to 300 kGy, there was gel appeared. The gel percent increased with the increasing in the absorbed dose, and saturated when the absorbed dose exceeded 1200 kGy. However, there was no gel formed for the PES films irradiated at ambient temperature even to 2250 kGy. The G(S) and G(X) were calculated according to the Y-crosslinking mechanism. The results values are consistent in error range. G(S) of 0.10 and G(X) of 0.23 were obtained. As calculated, almost all the macromolecular radicals produced by chain scission were used for crosslinking. Also, the glass transition temperature of the RX-PES films increased with the increasing in the absorbed doses, while the glass transition temperature of the PES films irradiated at ambient temperature decreased with the increasing in the absorbed doses. The blending films of the PES with FEP or ETFE were prepared and the high temperature irradiation effects were also studies

  17. Water-based preparation of spider silk films as drug delivery matrices.

    Science.gov (United States)

    Agostini, Elisa; Winter, Gerhard; Engert, Julia

    2015-09-10

    The main focus of this work was to obtain a drug delivery matrix characterized by biocompatibility, water insolubility and good mechanical properties. Moreover the preparation process has to be compatible with protein encapsulation and the obtained matrix should be able to sustain release a model protein. Spider silk proteins represent exceptional natural polymers due to their mechanical properties in combination with biocompatibility. As both hydrophobic and slowly biodegrading biopolymers, recombinant spider silk proteins fulfill the required properties for a drug delivery system. In this work, we present the preparation of eADF4(C16) films as drug delivery matrices without the use of any organic solvent. Water-based spider silk films were characterized in terms of protein secondary structure, thermal stability, zeta-potential, solubility, mechanical properties, and water absorption and desorption. Additionally, this study includes an evaluation of their application as a drug delivery system for both small molecular weight drugs and high molecular weight molecules such as proteins. Our investigation focused on possible improvements in the film's mechanical properties including plasticizers in the film matrix. Furthermore, different film designs were prepared, such as: monolayer, coated monolayer, multilayer (sandwich), and coated multilayer. The release of the model protein BSA from these new systems was studied. Results indicated that spider silk films are a promising protein drug delivery matrix, capable of releasing the model protein over 90 days with a release profile close to zero order kinetic. Such films could be used for several pharmaceutical and medical purposes, especially when mechanical strength of a drug eluting matrix is of high importance. Copyright © 2015 Elsevier B.V. All rights reserved.

  18. Direct nanofabrication and transmission electron microscopy on a suite of easy-to-prepare ultrathin film substrates

    International Nuclear Information System (INIS)

    Allred, Daniel B.; Zin, Melvin T.; Ma, Hong; Sarikaya, Mehmet; Baneyx, Francois; Jen, Alex K.-Y.; Schwartz, Daniel T.

    2007-01-01

    A high-yield, easy to master method for preparing electron transparent metal, oxide, and carbon ultrathin film substrates suitable for direct nano/micro-fabrication and transmission electron microscopy (TEM) is presented. To demonstrate the versatility of these substrates for fabrication processes, we use e-beam lithography, self-assembled colloidal and protein templates, and microcontact printing to create patterned masks for subsequent electrodeposition of two dimensional and three dimensional structures. The electrodeposited structures range in scale from a few nanometers to a few micrometers in characteristic dimensions. Because fabrication occurs directly on ultrathin films, TEM analysis of the resulting materials and buried interfaces is straightforward without any destructive sample preparation. We show that all the normal TEM analytical methods (imaging, diffraction, electron and X-ray spectroscopies) are compatible with the fabricated structures and the thin film substrates. These electron transparent substrates have largely rendered the need for TEM sample preparation on fabricated structures obsolete in our lab

  19. Electrical transport properties of MoO3 thin films prepared by laser assisted evaporation

    International Nuclear Information System (INIS)

    Lopez-Carreno, L.D.; Pardo, A.; Zuluaga, M.; Torres, J.; Alfonso, J.E.; Cortes-Bracho, O.L.

    2007-01-01

    In the present paper the growth of MoO 3 thin films on common glass substrates are described. The films were prepared by evaporation of a MoO 3 target with a CO 2 laser (10.6 μm), operating in the continuous wave mode. The effect of substrate temperature on the crystallographic structure and electrical properties of MoO 3 thin films was studied. The chemical composition of the different species formed on the films surface was obtained by X-ray photoelectron spectroscopy (XPS) and the crystalline structure was studied with X-ray diffraction (XRD). The electrical conductivity of the films was determined using the standard four-points method. Conductivity of the films varied from de 10 -9 to 10 -5 (Ωcm) -1 in the 300-600 K temperature range. Arrhenius-type plots for the electrical conductivity indicate the presence of at least two different conduction mechanisms. The I-V characteristic curve shows an ohmic behavior only in the 4.5-60 V range. Outside this interval the I-V curve has a behavior described by a power law. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Electrical transport properties of MoO{sub 3} thin films prepared by laser assisted evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Carreno, L.D.; Pardo, A.; Zuluaga, M.; Torres, J.; Alfonso, J.E. [Group of Materials with Technological Applications, GMAT, Physics Department, Universidad Nacional de Colombia, Bogota (Colombia); Cortes-Bracho, O.L. [Group of Materials with Technological Applications, GMAT, Physics Department, Universidad Nacional de Colombia, Bogota (Colombia); Electronic Engineering Department, Universidad Nacional de Colombia, Bogota (Colombia)

    2007-07-01

    In the present paper the growth of MoO{sub 3} thin films on common glass substrates are described. The films were prepared by evaporation of a MoO{sub 3} target with a CO{sub 2} laser (10.6 {mu}m), operating in the continuous wave mode. The effect of substrate temperature on the crystallographic structure and electrical properties of MoO{sub 3} thin films was studied. The chemical composition of the different species formed on the films surface was obtained by X-ray photoelectron spectroscopy (XPS) and the crystalline structure was studied with X-ray diffraction (XRD). The electrical conductivity of the films was determined using the standard four-points method. Conductivity of the films varied from de 10{sup -9} to 10{sup -5} ({omega}cm){sup -1} in the 300-600 K temperature range. Arrhenius-type plots for the electrical conductivity indicate the presence of at least two different conduction mechanisms. The I-V characteristic curve shows an ohmic behavior only in the 4.5-60 V range. Outside this interval the I-V curve has a behavior described by a power law. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Preparation of Nd-doped BiFeO{sub 3} films and their electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Meng [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China); Tan Guoqiang, E-mail: tan3114@163.com [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China); Xue Xu; Xia Ao; Ren Huijun [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China)

    2012-09-01

    The Nd-doped BiFeO{sub 3} thin films were prepared on SnO{sub 2}(FTO) substrates spin-coated by the sol-gel method using Nd(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O, Fe(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O and Bi(NO{sub 3}){sub 3}{center_dot}5H{sub 2}O as raw materials. The microstructure and electric properties of the BiFeO{sub 3} thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO{sub 3} films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi{sub 0.85}Nd{sub 0.15}FeO{sub 3} films gives rise to the largest Pr of 64 {mu}C/cm{sup 2}. The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi{sub 0.85}Nd{sub 0.15}FeO{sub 3} thin film at 10 kHz are 190 and 0.017 respectively.

  2. Preparation and analysis of superconducting Nb-Ge films

    International Nuclear Information System (INIS)

    Testardi, L.R.; Meek, R.L.; Poate, J.M.; Royer, W.A.; Storm, A.R.; Wernick, J.H.

    1975-01-01

    The dependences of T/subc/, resistivity, resistance ratio, and structure on chemical composition and sputtering conditions for Nb-Ge films have been studied. The chemical composition, impurity content, and x-ray structure were obtained using Rutherford backscattering, nuclear techniques, and x-ray diffraction. Although T/subc/ varies with composition, it is not found to be critically dependent upon exact stoichiometry; the Nb/Ge ratios vary by approx. 13% (2.6 to 3) for films with approx. 23-K onsets and by approx. 40% (2.2 to 3.3) for films with approx. 20-K onsets. For compositions similar to the bulk, the films have comparitively much higher T/subc/'s and smaller lattice parameters. X-ray results show the films to contain predominately A-15 phase (except for Nb/Ge less-than or equal to 2.5) with lattice parameters varying from 5.15 A for Nb-rich low-T/subc/ films to 5.12 A for Ge-rich films. Several percent of oxygen and carbon occur in low-T/subc/ amorphous films deposited at 650 degreeC but this is considerably reduced in high-T/subc/ films made simultaneously at approx. 750 degreeC. No argon was found and the nitrogen content was generally less than 1%. No correlation of high T/subc/'s and impurities was found. The optimum deposition temperature and resistivity are lowest, and the resistance ratio highest for Nb/Ge ratios somewhat below 3/1. A simple correlation of T/subc/ and resistance ratio is reported which is largely independent of all sputtering conditions and composition and which suggests that slightly higher T/subc/'s may be possible. Negative bias was found to be detrimental to T/subc/ while positive bias had relatively little effect. Magnetic-field-assisted sputtering led to significant increases in the sputtering rate and the optimum deposition temperature

  3. Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

    2012-07-15

    Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

  4. [Spectroscopic study on film formation mechanism and structure of composite silanes-V-Zr passive film].

    Science.gov (United States)

    Wang, Lei; Liu, Chang-sheng; Shi, Lei; An, Cheng-qiang

    2015-02-01

    A composite silanes-V-Zr passive film was overlayed on hot-dip galvanized steel. Attenuated total reflection Fourier transformed infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectrometer (XPS) and radio frequency glow discharge optical emission spectrometry (rf-GD-OES) were used to characterize the molecular structure of the silanes-V-Zr passive film. The mechanism of film formation was discussed: The results show that the silane molecules are crosslinked as the main film former and inorganic inhibitor is even distributed in the film. The fitting peak of 100.7 eV in XPS single Si2p energy range spectra of the composite silanes-V-Zr passive film and the widening and strengthening of the Si--O infrared absorption peak at 1100 cm(-1) indicate that the silanes were adsorbed on the surface of zinc with chemical bond of Si--O--Zn, and the silane molecules were connected with each other by bond of Si--O--Si. Two characteristic absorption peaks of amide at 1650 and 1560 cm(-1) appear in the infrared spectroscopy of the composite silanes-V-Zr passive film, and a characteristic absorption peak of epoxy groups at 910 cm(-1) disappears in the infrared spectroscopy of the passive film. The results indicate that gamma-APT can be prepared through nucleophilic ring-opening of ethylene oxide in gamma-GPT molecule to form C--N covalent bonds. The rf-GD-OES results indicate that there is a oxygen enriched layer in 0.3 microm depth of the composite silanes-V-Zr passive film. Moreover, ZrF4, ZrO2 and some inorganic matter obtained by the reaction during the forming processof the composite silanes-V-Zr passive film are distributed evenly throughout the film. According to the film composition, the physical processes and chemical reactions during the film forming process were studied by using ATR-FTIR. Based on this, the film forming mechanism was proposed.

  5. Combined sonochemical/CVD method for preparation of nanostructured carbon-doped TiO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Rasoulnezhad, Hossein [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Kavei, Ghassem, E-mail: kaveighassem@gmail.com [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Ahmadi, Kamran [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Rahimipour, Mohammad Reza [Ceramic Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of)

    2017-06-30

    Highlights: • Combination of sonochemical and CVD methods for preparation of nanostructured carbon-doped TiO{sub 2} thin film on glass substrate, for the first time. • High transparency, monodispersity and homogeneity of the prepared thin films. • Preparation of the carbon-doped TiO{sub 2} thin films with nanorod and nanosphere morphologies. - Abstract: The present work reports the successful synthesis of the nanostructured carbon-doped TiO{sub 2} thin films on glass substrate by combination of chemical vapor deposition (CVD) and ultrasonic methods, for the first time. In this method the ultrasound waves act as nebulizer for converting of sonochemically prepared TiO{sub 2} sol to the mist particles. These mist particles were thermally decomposed in subsequent CVD chamber at 320 °C to produce the carbon-doped TiO{sub 2} thin films. The obtained thin films were characterized by means of X-ray Diffraction (XRD), Raman spectroscopy, diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results show that the prepared thin films have anatase crystal structure and nanorod morphology, which calcination of them at 800 °C results in the conversion of nanorods to nanoparticles. In addition, the prepared samples have high transparency, monodispersity and homogeneity. The presence of the carbon element in the structure of the thin films causes the narrowing of the band-gap energy of TiO{sub 2} to about 2.8 eV, which results in the improvement of visible light absorption capabilities of the thin film.

  6. Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates

    Directory of Open Access Journals (Sweden)

    Pereira M. J.

    2014-07-01

    Full Text Available Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 ºC. Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.

  7. Structure of the short-range atomic order of WO3 amorphous films

    International Nuclear Information System (INIS)

    Olevskij, S.S.; Sergeev, M.S.; Tolstikhina, A.L.; Avilov, A.S.; Shkornyakov, S.M.; Semiletov, S.A.

    1984-01-01

    To study the causes of electrochromism manifestation in thin tungsten oxide films, the structure of WO 3 amorphous films has been investigated. The films were obtained by three different methods: by W(CO) 6 tungsten carbonyl pyrolysis, by high-frequency ion-plasma sputtering of a target prepared by WO 3 powder sintering, and by WO 3 powder thermal evaporation. Monocrystalline wafers of silicon and sodium chloride were used as substrates. The structure of short-range order in WO 3 amorphous films varies versus, the method of preparation in compliance with the type of polyhedral elements, (WO 6 , WO 5 ) and with the character of their packing (contacts via edges or vertices). Manifestation of electroc ro mism in WO 3 films prepared by varions methods and having different structure of short-range order is supposed to be realized through various mechanisms. One cannot exclude a potential simultaneous effect of the two coloration mechanisms

  8. Study on Preparation and Properties of PVC Film Modified by Rare Earth

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The transparent PVC films were prepared by tape casting. In the process of preparation, rare earth nitrate, as a kind of modifier, was added to the solution of PVC and THF. These PVC films were tested after being crosslinked by ultraviolet light. It is found that the mechanical and physical properties of all the PVC films modified by rare earth nitrate are greatly enhanced.

  9. Preparation of multi-layer film consisting of hydrogen-free DLC and nitrogen-containing DLC for conductive hard coating

    Science.gov (United States)

    Iijima, Yushi; Harigai, Toru; Isono, Ryo; Degai, Satoshi; Tanimoto, Tsuyoshi; Suda, Yoshiyuki; Takikawa, Hirofumi; Yasui, Haruyuki; Kaneko, Satoru; Kunitsugu, Shinsuke; Kamiya, Masao; Taki, Makoto

    2018-01-01

    Conductive hard-coating films have potential application as protective films for contact pins used in the electrical inspection process for integrated circuit chips. In this study, multi-layer diamond-like carbon (DLC) films were prepared as conductive hard-coating films. The multi-layer DLC films consisting of DLC and nitrogen-containing DLC (N-DLC) film were prepared using a T-shape filtered arc deposition method. Periodic DLC/N-DLC four-layer and eight-layer films had the same film thickness by changing the thickness of each layer. In the ball-on-disk test, the N-DLC mono-layer film showed the highest wear resistance; however, in the spherical polishing method, the eight-layer film showed the highest polishing resistance. The wear and polishing resistance and the aggressiveness against an opponent material of the multi-layer DLC films improved by reducing the thickness of a layer. In multi-layer films, the soft N-DLC layer between hard DLC layers is believed to function as a cushion. Thus, the tribological properties of the DLC films were improved by a multi-layered structure. The electrical resistivity of multi-layer DLC films was approximately half that of the DLC mono-layer film. Therefore, the periodic DLC/N-DLC eight-layer film is a good conductive hard-coating film.

  10. Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films

    International Nuclear Information System (INIS)

    Tsay, Chien-Yie; Huang, Tzu-Teng

    2013-01-01

    Indium gallium zinc oxide (IGZO) transparent semiconductor thin films were prepared by KrF excimer laser annealing of sol–gel derived precursor films. Each as-coated film was dried at 150 °C in air and then annealed using excimer laser irradiation. The influence of laser irradiation energy density on surface conditions, optical transmittances, and electrical properties of laser annealed IGZO thin films were investigated, and the physical properties of the excimer laser annealed (ELA) and the thermally annealed (TA) thin films were compared. Experimental results showed that two kinds of surface morphology resulted from excimer laser annealing. Irradiation with a lower energy density (≤250 mJ cm −2 ) produced wavy and irregular surfaces, while irradiation with a higher energy density (≥350 mJ cm −2 ) produced flat and dense surfaces consisting of uniform nano-sized amorphous particles. The explanation for the differences in surface features and film quality is that using laser irradiation energy to form IGZO thin films improves the film density and removes organic constituents. The dried IGZO sol–gel films irradiated with a laser energy density of 350 mJ/cm 2 had the best physical properties of all the ELA IGZO thin films. The mean resistivity of the ELA 350 thin films (4.48 × 10 3 Ω cm) was lower than that of TA thin films (1.39 × 10 4 Ω cm), and the average optical transmittance in the visible range (90.2%) of the ELA 350 thin films was slightly higher than that of TA thin films (89.7%). - Highlights: • IGZO semiconductor films were prepared by laser annealing of sol–gel derived films. • Surface roughness and resistivity of ELA samples were affected by energy density. • The ELA 350 IGZO film exhibited the best properties among all of ELA IGZO films. • Transmittance and resistivity of ELA 350 films are greater than those of TA films

  11. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  12. Influence of air flow rate on structural and electrical properties of undoped indium oxide thin films

    International Nuclear Information System (INIS)

    Mirzapour, S.; Rozati, S.M.; Takwale, M.G.; Marathe, B.R.; Bhide, V.G.

    1993-01-01

    Using the spray pyrolysis technique thin films of indium oxide were prepared on Corning glass (7059) at a substrate temperature of 425 C at different flow rates. The electrical and structural properties of these films were studied. The Hall measurements at room temperature showed that the films prepared in an air flow rate of 7 litre min -1 have the highest mobility of 47 cm 2 V -1 s -1 and a minimum resistivity of 1.125 x 10 -3 Ω cm. The X-ray diffraction patterns showed that the films have a preferred orientation of [400] which peaks at the air flow rate of 7 litre min -1 . (orig.)

  13. Preparation of superhydrophobic poly(methyl methacrylate)-silicon dioxide nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jinyan [Key Laboratory of Ministry of Education for Special Functional Materials, Henan University, Jinming Road, Kaifeng, Henan Province 475004 (China); Chen Xinhua [Key Laboratory of Ministry of Education for Special Functional Materials, Henan University, Jinming Road, Kaifeng, Henan Province 475004 (China); College of Chemistry and Chemical Engineering, Xuchang University, Xuchang 461000 (China); Kang Yingke; Yang Guangbin; Yu Laigui [Key Laboratory of Ministry of Education for Special Functional Materials, Henan University, Jinming Road, Kaifeng, Henan Province 475004 (China); Zhang Pingyu, E-mail: pingyu@henu.edu.cn [Key Laboratory of Ministry of Education for Special Functional Materials, Henan University, Jinming Road, Kaifeng, Henan Province 475004 (China)

    2010-12-15

    Superhydrophobic poly(methyl methacrylate)-SiO{sub 2} (coded as PMMA-SiO{sub 2}) nanocomposite films with micro-nanohierarchical structure were prepared via a simple approach in the absence of low surface-energy compounds. By spin-coating the suspension of hydrophobic silica (SiO{sub 2}) nanoparticles dispersed in PMMA solution, target nanocomposite films were obtained on glass slides. The wetting behavior of PMMA-SiO{sub 2} nanocomposite films was investigated in relation to the dosage of SiO{sub 2} nanoparticles dispersed in PMMA solution. It was found that hydrophilic PMMA film was transferred to superhydrophobic PMMA-SiO{sub 2} nanocomposite films when hydrophobic SiO{sub 2} nanoparticles were introduced into the PMMA solution at a high enough dosage (0.2 g and above). Resultant PMMA-SiO{sub 2} nanocomposite films had a static water contact angle of above 162{sup o}, showing promising applications in selfcleaning and waterproof for outer wall of building, outer covering for automobile, sanitary wares, and so forth.

  14. Preparation of superhydrophobic poly(methyl methacrylate)-silicon dioxide nanocomposite films

    International Nuclear Information System (INIS)

    Wang Jinyan; Chen Xinhua; Kang Yingke; Yang Guangbin; Yu Laigui; Zhang Pingyu

    2010-01-01

    Superhydrophobic poly(methyl methacrylate)-SiO 2 (coded as PMMA-SiO 2 ) nanocomposite films with micro-nanohierarchical structure were prepared via a simple approach in the absence of low surface-energy compounds. By spin-coating the suspension of hydrophobic silica (SiO 2 ) nanoparticles dispersed in PMMA solution, target nanocomposite films were obtained on glass slides. The wetting behavior of PMMA-SiO 2 nanocomposite films was investigated in relation to the dosage of SiO 2 nanoparticles dispersed in PMMA solution. It was found that hydrophilic PMMA film was transferred to superhydrophobic PMMA-SiO 2 nanocomposite films when hydrophobic SiO 2 nanoparticles were introduced into the PMMA solution at a high enough dosage (0.2 g and above). Resultant PMMA-SiO 2 nanocomposite films had a static water contact angle of above 162 o , showing promising applications in selfcleaning and waterproof for outer wall of building, outer covering for automobile, sanitary wares, and so forth.

  15. Preparation and antibacterial properties of hybrid-zirconia films with silver nanoparticles

    International Nuclear Information System (INIS)

    Azócar, Ignacio; Vargas, Esteban; Duran, Nicole; Arrieta, Abel; González, Evelyn

    2012-01-01

    The antimicrobial effect of incorporating silver nanoparticles (AgNps) into zirconia matrix–polyether glycol was studied. AgNps of 4–6 nm in size were synthesized using the inverse micelles method, and different doses of metallic nanoparticles were incorporated into zirconia–polyether glycol mixtures during the ageing procedure. Atomic force microscopy (AFM) of the modified hybrid film showed a homogenous distribution of 20–80 nm diameter AgNps, indicating agglomeration of these structures during film modification; such agglomerations were greater when increasing the dosage of the colloidal system. The AgNps-hybrid films showed higher antimicrobial activity against Gram-positive bacteria than for Gram-negative bacteria. Hybrid films prepared with dioctyl sodium sulfosuccinate (AOT) stabilized AgNps presented enhanced antibacterial activity compared to that obtained through the addition of a high AgNO 3 concentration (0.3 wt%). -- Graphical abstract: Atomic Force Micrographs, top and cross section view, showing silver nanoparticles embedded in a zirconia–polyether glycol hybrid film. Highlights: ► Antibacterial activity of films (zirconia–polyether glycol) modified with silver nanoparticles. ► Biofilm formation is prevented. ► High sensibility against gram positive bacteria.

  16. Preparation and antibacterial properties of hybrid-zirconia films with silver nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Azocar, Ignacio, E-mail: manuel.azocar@usach.cl [Departamento de Quimica de los Materiales, Facultad de Quimica y Biologia, Universidad de Santiago de Chile, USACH, Avenida Bernardo O' Higgins 3363, Casilla 40, Correo 33, Santiago (Chile); Vargas, Esteban [Facultad de Ingenieria, Departamento de Metalurgia, Universidad de Santiago de Chile, USACH (Chile); Duran, Nicole [Departamento de Quimica de los Materiales, Facultad de Quimica y Biologia, Universidad de Santiago de Chile, USACH, Avenida Bernardo O' Higgins 3363, Casilla 40, Correo 33, Santiago (Chile); Arrieta, Abel [Departamento de Biologia, Facultad de Quimica y Biologia, Universidad de Santiago de Chile, USACH (Chile); Gonzalez, Evelyn [Departamento de Quimica de los Materiales, Facultad de Quimica y Biologia, Universidad de Santiago de Chile, USACH, Avenida Bernardo O' Higgins 3363, Casilla 40, Correo 33, Santiago (Chile); Facultad de Ingenieria, Departamento de Metalurgia, Universidad de Santiago de Chile, USACH (Chile); Departamento de Biologia, Facultad de Quimica y Biologia, Universidad de Santiago de Chile, USACH (Chile); Departamento de Quimica Farmacologica y Toxicologica, Facultad de Ciencias Quimicas, Universidad de Chile, Sergio Livingstone Polhammer 1007, Santiago (Chile); and others

    2012-11-15

    The antimicrobial effect of incorporating silver nanoparticles (AgNps) into zirconia matrix-polyether glycol was studied. AgNps of 4-6 nm in size were synthesized using the inverse micelles method, and different doses of metallic nanoparticles were incorporated into zirconia-polyether glycol mixtures during the ageing procedure. Atomic force microscopy (AFM) of the modified hybrid film showed a homogenous distribution of 20-80 nm diameter AgNps, indicating agglomeration of these structures during film modification; such agglomerations were greater when increasing the dosage of the colloidal system. The AgNps-hybrid films showed higher antimicrobial activity against Gram-positive bacteria than for Gram-negative bacteria. Hybrid films prepared with dioctyl sodium sulfosuccinate (AOT) stabilized AgNps presented enhanced antibacterial activity compared to that obtained through the addition of a high AgNO{sub 3} concentration (0.3 wt%). -- Graphical abstract: Atomic Force Micrographs, top and cross section view, showing silver nanoparticles embedded in a zirconia-polyether glycol hybrid film. Highlights: Black-Right-Pointing-Pointer Antibacterial activity of films (zirconia-polyether glycol) modified with silver nanoparticles. Black-Right-Pointing-Pointer Biofilm formation is prevented. Black-Right-Pointing-Pointer High sensibility against gram positive bacteria.

  17. Strain dependent magnetic properties of LSMO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Prajapat, C.L.; Gupta, N.; Singh, M.R.; Mishra, P.K.; Gupta, S.K.; Ravikumar, G.; Bhattacharya, D.; Singh, Surendra; Basu, S.; Roul, B.K.

    2014-01-01

    Perovskite manganites exhibiting colossal magnetoresistance (CMR) are ideal candidates for growth of epitaxial multilayers with oxide high temperature superconductors owing to their structural similarity and comparable growth conditions. They are widely employed in studies on superconductor/ferromagnet-superlattices. Among the manganites, La 2/3 Sr 1/3 MnO 3 (LSMO) has one of the highest FM transition temperatures (above 300K). Magnetic properties of films that are dependent on strain (such as coercivity) can be tuned by varying deposition conditions, by using different substrates and varying thickness of films in nano range. Lattice mismatch between LSMO with STO and MgO substrates are 0.6% and 8% respectively. This mismatch produces tensile strain in LSMO films and changes its magnetic properties. We study the change in magnetic properties of epitaxial LSMO thin films on MgO (100) and STO (100) substrates with varying thickness to change the strain in the film. LSMO films are prepared by pulsed laser deposition

  18. Gas Sensing of Fluorine Doped Tin Oxide Thin Films Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    A. A. YADAV

    2008-05-01

    Full Text Available Fluorine doped tin oxide (F: SnO2 films have been prepared onto the amorphous glass substrates by a spray pyrolysis. XRD studies reveal that the material deposited is polycrystalline SnO2 and have tetragonal structure. It is observed that films are highly orientated along (200 direction. The direct optical band gap energy for the F: SnO2 films are found to be 4.15 eV. Gas sensing properties of the sensor were checked against combustible gases like H2, CO2 CO, C3H8, CH4.The H2 sensitivity of the F-doped SnO2 sensor was found to be increased. The increase in the sensitivity is discussed in terms of increased resistivity and reduced permeation of gaseous oxygen into the underlying sensing layer due to the surface modification of the sensor.

  19. Thin polymer films prepared by plasma immersion ion implantation and deposition

    International Nuclear Information System (INIS)

    Rangel, Elidiane C.; Silva, Paulo A.F.; Mota, Rogerio P.; Schreiner, Wido H.; Cruz, Nilson C.

    2005-01-01

    This work describes an investigation of the properties of polymer films prepared by plasma immersion ion implantation and deposition. Films were synthesized from low pressure benzene glow discharges, biasing the samples with 25 kV negative pulses. The total energy deposited in the growing layer was varied tailoring simultaneously pulse frequency and duty cycle. The effect of the pulse characteristics on the chemical composition and mechanical properties of the films was studied by X-ray photoelectron spectroscopy (XPS) and nanoindentation, respectively. Analysis of the deconvoluted C 1s XPS peaks demonstrated that oxygen was incorporated in all the samples. The chemical modifications induced structural reorganization, characterized by chain cross-linking and unsaturation, affecting material properties. Hardness and plastic resistance parameter increased under certain bombardment conditions. An interpretation is proposed in terms of the total energy delivered to the growing layer

  20. Influences of the iron ion (Fe{sup 3+})-doping on structural and optical properties of nanocrystalline TiO{sub 2} thin films prepared by sol-gel spin coating

    Energy Technology Data Exchange (ETDEWEB)

    Ben Naceur, J. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar, Batna (Algeria); Bousbih, F.; Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia)

    2011-10-01

    Titanium dioxide (TiO{sub 2}) thin films doping of various iron ion (Fe{sup 3+}) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 deg. C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO{sub 2} thin films comprised only the anatase TiO{sub 2}, but the crystallinity decreased when the Fe{sup 3+} content increased from 0% to 20%. During the Fe{sup 3+} addition to 20%, the phase of TiO{sub 2} thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E{sub g}) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe{sup 3+} content.

  1. Molecular and electronic structure of thin films of protoporphyrin(IX)Fe(III)Cl

    Science.gov (United States)

    Snyder, Shelly R.; White, Henry S.

    1991-11-01

    Electrochemical, scanning tunneling microscopy (STM), and tunneling spectroscopy studies of the molecular and electronic properties of thin films of protoporphyrin(IX)Fe(III)Cl (abbreviated as PP(IX)Fe(III)Cl) on highly oriented pyrolytic graphite (HOPG) electrodes are reported. PP(IX)Fe(III)Cl films are prepared by two different methods: (1) adsorption, yielding an electrochemically-active film, and (2) irreversible electrooxidative polymerization, yielding an electrochemically-inactive film. STM images, in conjunction with electro-chemical results, indicate that adsorption of PP(IX)Fe(III)Cl from aqueous solutions onto freshly cleaved HOPG results in a film comprised of molecular aggregates. In contrast, films prepared by irreversible electrooxidative polymerization of PP(IX)Fe(III)Cl have a denser, highly structured morphology, including what appear to be small pinholes (approx. 50A diameter) in an otherwise continuous film.

  2. Preparation of titanium dioxide films on etched aluminum foil by vacuum infiltration and anodizing

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Lian, E-mail: xianglian93@163.com; Park, Sang-Shik, E-mail: parkss@knu.ac.kr

    2016-12-01

    Highlights: • Al{sub 2}O{sub 3}–TiO{sub 2} composite films were prepared onto high voltage Al etching foil. • The coated and anodized samples showed multi-layer structures. • The capacitances of TiO{sub 2} coated samples showed an increase of 42%. • The increase in capacitance was mainly due to the Al–Ti composite layer. - Abstract: Al{sub 2}O{sub 3}–TiO{sub 2} (Al–Ti) composite oxide films are a promising dielectric material for future use in capacitors. In this study, TiO{sub 2} films were prepared on etched Al foils by vacuum infiltration. TiO{sub 2} films prepared using a sol–gel process were annealed at various temperatures (450, 500, and 550 °C) for different time durations (10, 30, and 60 min) for 4 cycles, and then anodized at 100 V. The specimens were characterized using X-ray diffraction, field emission scanning electron microscopy, and field emission transmission electron microscopy. The results show that the tunnels of the specimens feature a multi-layer structure consisting of an Al{sub 2}O{sub 3} outer layer, an Al–Ti composite oxide middle layer, and an aluminum hydrate inner layer. The electrical properties of the specimens, such as the withstanding voltage and specific capacitance, were also measured. Compared to specimens without TiO{sub 2} coating, the specific capacitances of the TiO{sub 2}-coated specimens are increased. The specific capacitance of the anode Al foil with TiO{sub 2} coating increased by 42% compared to that of a specimen without TiO{sub 2} coating when annealed at 550 °C for 10 min. These composite oxide films could enhance the specific capacitance of anode Al foils used in dielectric materials.

  3. Fluctuations and structure of amphiphilic films

    International Nuclear Information System (INIS)

    Gourier, CH.

    1996-01-01

    This thesis is divided in three parts.The first part exposes in a theoretical point of view, how the fluctuations spectrum of an amphiphilic film is governed by its properties and its bidimensional characteristics.The measurements of fluctuations spectra of an interface are accessible with the measurement of intensity that interface diffuses out of the specular angle, we present in the second chapter the principles of the X rays diffusion by a real interface and see how the diffuse diffusion experiments allow to determine the fluctuations spectrum of an amphiphilic film. The second part is devoted to the different experimental techniques that have allowed to realize the study of fluctuation as well as the structural study.The third part is devoted to experimental results concerning the measurements of fluctuations spectra and to the study of the structure of amphiphilic films. We show that it is possible by using an intense source of X rays (ESRF: European Synchrotron Radiation Facility) to measure the water and amphiphilic films fluctuations spectra until molecular scales. The last chapter is devoted to the structural study and film fluctuations made of di-acetylenic molecules. (N.C.)

  4. Topotactic preparation of textured alumina ceramics from dehydroxylation of gibbsite films

    Energy Technology Data Exchange (ETDEWEB)

    Louaer, Seif-Eddine; Wang, Yao, E-mail: yao@buaa.edu.cn; Guo, Lin, E-mail: guolin@buaa.edu.cn

    2014-11-14

    In this paper, textured alumina ceramics were prepared from dehydroxylation of gibbsite films and the pseudomorphic and topotactic nature of the dehydroxylation of textured gibbsite films has been investigated. First, the precursor film with a (001)-textured structure was obtained via vacuum filtration deposition of diluted aqueous suspensions of gibbsite nanoplatelets. Subsequently, (001)-textured α-alumina ceramics were successfully achieved by sintering of the deposited gibbsite films without addition of α-alumina seeds. The Scanning Electron Microscope (SEM) and X-ray Diffraction (XRD) results show that, during the phase transition from gibbsite to α-alumina, both layered morphology and crystal's axis orientation have been retained to a considerable extent. For the first time, a direct XRD evidence of gibbsite topotactic dehydroxylation to the α-alumina phase is presented. It is believed that the method described here exploits gibbsite's pseudomorphic and topotactic dehydroxylation, not on individual particles scale but on a bulk form. The resulting structure can be considered as inorganic scaffolds which can have applications for fabrication of dense, textured alumina-based ceramics and other layered/textured nanocomposites. - Highlights: • Gibbsite nanoplatelets were assembled on their basal plane to form (001)-textured films. • Textured alumina ceramics were prepared by sintering textured gibbsite films without addition of α-alumina seeds. • Both pseudomorphic and topotactic aspects were exploited in bulk form instead of individual nanoparticulate size. • Direct XRD evidence of the topotactic dehydroxylation from gibbsite to α-alumina is presented in this work.

  5. Topotactic preparation of textured alumina ceramics from dehydroxylation of gibbsite films

    International Nuclear Information System (INIS)

    Louaer, Seif-Eddine; Wang, Yao; Guo, Lin

    2014-01-01

    In this paper, textured alumina ceramics were prepared from dehydroxylation of gibbsite films and the pseudomorphic and topotactic nature of the dehydroxylation of textured gibbsite films has been investigated. First, the precursor film with a (001)-textured structure was obtained via vacuum filtration deposition of diluted aqueous suspensions of gibbsite nanoplatelets. Subsequently, (001)-textured α-alumina ceramics were successfully achieved by sintering of the deposited gibbsite films without addition of α-alumina seeds. The Scanning Electron Microscope (SEM) and X-ray Diffraction (XRD) results show that, during the phase transition from gibbsite to α-alumina, both layered morphology and crystal's axis orientation have been retained to a considerable extent. For the first time, a direct XRD evidence of gibbsite topotactic dehydroxylation to the α-alumina phase is presented. It is believed that the method described here exploits gibbsite's pseudomorphic and topotactic dehydroxylation, not on individual particles scale but on a bulk form. The resulting structure can be considered as inorganic scaffolds which can have applications for fabrication of dense, textured alumina-based ceramics and other layered/textured nanocomposites. - Highlights: • Gibbsite nanoplatelets were assembled on their basal plane to form (001)-textured films. • Textured alumina ceramics were prepared by sintering textured gibbsite films without addition of α-alumina seeds. • Both pseudomorphic and topotactic aspects were exploited in bulk form instead of individual nanoparticulate size. • Direct XRD evidence of the topotactic dehydroxylation from gibbsite to α-alumina is presented in this work

  6. Preparation and characterization of tin sulphide thin films by a spray pyrolysis technique

    International Nuclear Information System (INIS)

    Ben Haj Salah, H.; Bouzouita, H.; Rezig, B.

    2005-01-01

    We have attempted the preparation and characterization of Sn 2 S 3 thin films by using the spray pyrolysis technique. We started with acidic aqueous solutions including tin (II) chloride and thiourea, which were atomized with compressed air as carrier gas. The Sn 2 S 3 thin films were obtained on glass substrates. Thin layers of Sn-S have been grown at various temperatures in the range of 275-325 deg. C and various [S/Sn] ratios. The structural properties have been determined by using X-ray diffraction (XRD). The changes observed in the structural phases during the film formation in dependence of growth temperatures are reported and discussed. The optical constants of the deposited films were obtained using the experimentally recorded transmission and reflectance spectral data as functions of the wavelength, in the range of 300-1800 nm. An analysis of the deduced spectral absorption of the deposited films revealed an optical indirect band gap energy of 1.9-2.2 eV for Sn 2 S 3 layers

  7. Enhanced magnetostriction derived from magnetic single domain structures in cluster-assembled SmCo films

    Science.gov (United States)

    Bai, Yulong; Yang, Bo; Guo, Fei; Lu, Qingshan; Zhao, Shifeng

    2017-11-01

    Cluster-assembled SmCo alloy films were prepared by low energy cluster beam deposition. The structure, magnetic domain, magnetization, and magnetostriction of the films were characterized. It is shown that the as-prepared films are assembled in compact and uniformly distributed spherical cluster nanoparticles, most of which, after vacuum in situ annealing at 700 K, aggregated to form cluster islands. These cluster islands result in transformations from superparamagnetic states to magnetic single domain (MSD) states in the films. Such MSD structures contribute to the enhanced magnetostrictive behaviors with a saturation magnetostrictive coefficient of 160 × 10-6 in comparison to 105 × 10-6 for the as-prepared films. This work demonstrates candidate materials that could be applied in nano-electro-mechanical systems, low power information storage, and weak magnetic detecting devices.

  8. STRUCTURAL ANALYSIS OF CONDITIONAL PREPARATION IN JUDO

    Directory of Open Access Journals (Sweden)

    Slavko Obadov

    2006-06-01

    Full Text Available Conditional preparation is a constituent part of overall sports preparation. Conditional training might be defined as a process of improvement of a sportsman’s functional and motor abilities, morphological characteristics, health, as well as the required motor knowledge. Conditional preparation can be might be classified as: general, basic and situational conditional preparation. Programs of the conditional training might be classified as: developing, resuming, recovering, preventive and recovering ones. High level of the general physical preparation enables maximum demonstration of the physical abilities of a sportsman during the stage of improvement of the specific motor abilities. Good general preparation of a sportsman enables him to push beyond his functional limits in order to cope with heavy loads easier, which subsequently enables him to achieve top performance level. Basic conditional preparation assumes the development of the most important judo abilities. Specific conditional preparation is related directly to the execution of different structural elements under the conditional requirements. Situational conditional preparation enables integration of the tactical and conditional training.

  9. Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

    OpenAIRE

    Heimdal, Carl Philip J

    2014-01-01

    The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

  10. Composition and properties of nanocrystalline Zn S thin films prepared by a new chemical bath deposition route

    International Nuclear Information System (INIS)

    Sahraei, R.; Goudarzi, A.; Ahmadpoor, H.; Motedayen Aval, Gh.

    2006-01-01

    Zinc sulfide nanocrystalline thin films were prepared by a new chemical bath deposition route on soda lime glass and quartz substrates using a weak acidic bath, in which disodium salt of ethylenediaminetetraacetic acid (EDTA) acts as a complexing agent and thioacetamide acts as a source of sulfide ions. The thickness of the films varied from a few nm to 500 nm. The chemical composition of films was studied by energy-dispersive X-ray analyzer and Fourier transform infrared spectroscopy. The films are very close to Zinc sulfide stoichiometry and we did not observed any organic compounds in the impurity form in them. X-ray diffraction indicates that the film and powder formed in the same reaction bath have cubic zinc blende structure. The films have high transmittance of about 75% in the visible region. The optical band-gap energy (E g ) was determined to be 3.75 eV from the absorption spectrophotometry measurements.

  11. The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

    Science.gov (United States)

    Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

    2018-05-01

    We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

  12. Preparation and characterization of thick BSCCO 2223 films

    International Nuclear Information System (INIS)

    Ciancio, G; Avila, A; Malachevsky, M.T; Ovidio, C.A

    2002-01-01

    Among the most widespread applications for critical high-temperature ceramic superconductors are for silver veined tapes, with the superconductor in the middle. These tapes are prepared by the powder- in - tube method. To attain high densities of critical current, the ceramic material must have a certain texture, with the grains oriented with the c axis perpendicular to the direction in which the current circulates. In the system that was studied, the degree of orientation increases as the distance to the vein decreases, with the maximum being in the silver-ceramic inter-phase. Superconductor tapes become inconvenient when defining the ceramic, especially because of the orientation of their plates as a function of the distance to the silver. Although the silver can be dissolved by a chemical attack in order to uncover the ceramic, greater precaution is needed while manipulating the superconductor and obtaining representative data. The behavior of thick films of the compound BSCCO 2223, deposited on silver sheets, forming silver-ceramic composites, was studied. These sheets simulate the silver-ceramic inter-phase and the distribution of the grains towards the center in a thick tape. After the samples were prepared, the phases that were present were characterized by x-ray diffraction and the resulting microstructure was analyzed with a SEM (Scanning Electron Microscope). Its mechanical properties were evaluated, following the formation and propagation of cracks in real time using four point flexion microassays inside the SEM chamber, as well as generating tension-deformation curves. The method of preparation of the thick films is discussed and its influence on the results obtained with the different characterizations (cw)

  13. Preparation and characterization of micro-grid modified In{sub 2}O{sub 3}:W films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Dongmei; Wang, Wenwen, E-mail: 08569@buaa.edu.cn; Zhang, Fan; Fu, Qiang; Pan, Jiaojiao

    2016-08-01

    Tungsten doped indium oxide (In{sub 2}O{sub 3}:W, IWO) thin films with IWO micro-grid covered surface were prepared at room temperature using techniques of radio frequency (RF) magnetron sputtering and polystyrene (PS) microsphere template. The composition, crystallization structures, surface morphologies, and optical and electrical properties of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, spectrophotometer from visible to near infrared (NIR) range and Hall effect measurement, respectively. Periodic micro-grid modified surface was obtained to improve light trapping properties. The effects of the PS micro-spheres diameters and the sputtering time on the surface morphology, transmittance in NIR range, diffuse reflection and conductive properties of the IWO films are investigated. Experiments show that surface modification of the IWO film with micro-grid under the optimized condition can improve the conductivity of the films by 15%, and the diffuse reflectance by 150%, with less than 8% decrease of the transmittance in the visible region. The study would be beneficial to the light trapping effect of solar cells using IWO films as transparent electrodes. - Highlights: • In{sub 2}O{sub 3}:W (IWO) films were obtained by reactive frequency magnetron sputtering. • IWO micro-grids were prepared on the surface of IWO films. • Influences of micro-grid size and sputtering time on IWO films were analyzed. • Both high conductivity and transparency are acquired in near-infrared region.

  14. Effect of Structure, Composition, and Micromorphology on the Hydrophobic Property of F-DLC Film

    Directory of Open Access Journals (Sweden)

    Aihua Jiang

    2013-01-01

    Full Text Available Fluorinated diamond-like carbon (F-DLC films were prepared by radio frequency plasma-enhanced chemical vapor deposition technique with CF4 and CH4 as source gases under different deposition conditions. The chemical bonding structure and composition of the films were detected by Raman, Fourier transform infrared absorption spectrometry (FTIR, and X-ray photoelectron spectroscopy (XPS characterization. The micromorphology and surface roughness of the film were observed and analyzed by atomic force microscopy (AFM. The results indicated that all the prepared films presented a diamond-like carbon structure. The relative content of fluorine in the films increased, containing more CF2 groups. The ratio of hybrid structure sp3/sp2 decreased. The surface roughness of the films increased when the gas flow ratio R (R = CF4/[CH4 + CF4] or the deposition power increased. The contact angle of water with the surface of the F-DLC film was measured with a static drop-contact angle/surface tension measuring instrument. The hydrophobic property of the F-DLC films was found to be dependent on the sp2 structure, fluorine content, and surface roughness of the films. The contact angle increased when the relative content of fluorine in the films and sp2 content increased, whereas the contact angle first increased and then decreased with the surface roughness.

  15. Photovoltaic properties of undoped ZnO thin films prepared by the spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Ikhmayies, S.J. [Applied Science Private Univ., Amman (Jordan). Dept. of Physics; Abu El-Haija, N.M.; Ahmad-Bitar, R.N. [Jordan Univ., Amman (Jordan). Dept. of Physics

    2009-07-01

    Zinc oxide (ZnO) can be used as a window material, transparent electrode and active layer in different types of solar cells, UV emitters, and UV sensors. In addition to being low cost, ZnO is more abundant than indium tin oxide. ZnO is non toxic and has a high chemical stability in reduction environments. When ZnO films are made without any intentional doping, they exhibit n-type conductivity. ZnO thin films can be prepared by reactive sputtering, laser ablation, chemical-vapour deposition, laser molecular-beam epitaxy, thermal evaporation, sol-gel, atomic layer deposition and spray pyrolysis, with the latter being simple, inexpensive and adaptable to large area depositions. In this work ZnCl{sub 2} was used as a source of Zn where it was dissolved in distilled water. The structural, electrical and optical properties of the films were investigated due to their important characteristic for solar cell applications. Polycrystalline ZnO thin films were deposited on glass substrate by spray pyrolysis using a home-made spraying system at substrate temperature of 450 degrees C. The films were characterized by recording and analyzing their I-V plots, their transmittance, X-ray diffraction and SEM micrographs. There resistivity was found to be about 200 ohms per cm and their bandgap energy about 3.27 eV. X-ray diffraction patterns revealed that the films have a hexagonal wurtzite structure and are highly ordered with a preferential orientation (002). SEM images revealed that the substrates are continuously covered and the surface of the film is uniform. 16 refs., 4 figs.

  16. Research on structure and electrical parameters of indium antimonide films

    International Nuclear Information System (INIS)

    Mukhametniyazova, A.; Konyaeva, V.F.; Sukhanov, S.; Ashirov, A.; Aleksanyan, S.N.

    1980-01-01

    Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(α)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 μm thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found

  17. Research on structure and electrical parameters of indium antimonide films

    Energy Technology Data Exchange (ETDEWEB)

    Mukhametniyazova, A; Konyaeva, V F; Sukhanov, S; Ashirov, A; Aleksanyan, S N [AN Turkmenskoj SSR, Ashkhabad. Fiziko-Tekhnicheskii Inst.

    1980-01-01

    Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(..cap alpha..)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 ..mu..m thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found.

  18. Texture control and growth mechanism of WSe{sub 2} film prepared by rapid selenization of W film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou 341300 (China); Gao, Di; Li, Kun; Pang, Mengde; Xie, Senlin [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Liu, Rutie, E-mail: llrrtt@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Zou, Jianpeng [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

    2017-02-01

    Highlights: • We present a highly efficient method for preparing WSe{sub 2} film by rapid selenization. • The W film phase composition has little effect on WSe{sub 2} film orientation. • W film density is a critical factor that influences the WSe{sub 2} orientation. • A growth model was proposed for two kinds of WSe{sub 2} film textures. - Abstract: The tungsten diselenide (WSe{sub 2}) films with different orientation present unique properties suitable for specific applications, such as WSe{sub 2} with a C-axis⊥substrate for optoelectronics and WSe{sub 2} with a C-axis // substrate for electrocatalysts. Orientation control of WSe{sub 2} is essential for realizing the practical applications. In this letter, a WSe{sub 2} film has been prepared via rapid selenization of a magnetron-sputtered tungsten (W) film. The influence of the magnetron-sputtered W film on WSe{sub 2} film growth was studied systematically. Scanning electron microscopy, X-ray diffractometry and high-resolution transmission electron microscopy were used to evaluate the morphology, microstructure and phase composition of the W and WSe{sub 2} films. The substrate temperature has a significant effect on the W film phase composition, but little effect on the WSe{sub 2} film orientation. The WSe{sub 2} orientation can be controlled by changing the W film microstructure. A dense W film that is deposited at low pressure is conducive to the formation of WSe{sub 2} with a C-axis⊥substrate, whereas a porous W film deposited at high pressure favors the formation of WSe{sub 2} with a C-axis // substrate. A growth model for the WSe{sub 2} film with different texture has been proposed based on the experimental results. The direction of selenium (Se) vapor diffusion differs at the top and side surfaces. This is a key factor for the preparation of anisotropic WSe{sub 2} films. Highly oriented WSe{sub 2} films with a C-axis⊥substrate grow from the dense W film deposited at low pressure because Se vapor

  19. Preparation of titanium dioxide films on etched aluminum foil by vacuum infiltration and anodizing

    Science.gov (United States)

    Xiang, Lian; Park, Sang-Shik

    2016-12-01

    Al2O3-TiO2 (Al-Ti) composite oxide films are a promising dielectric material for future use in capacitors. In this study, TiO2 films were prepared on etched Al foils by vacuum infiltration. TiO2 films prepared using a sol-gel process were annealed at various temperatures (450, 500, and 550 °C) for different time durations (10, 30, and 60 min) for 4 cycles, and then anodized at 100 V. The specimens were characterized using X-ray diffraction, field emission scanning electron microscopy, and field emission transmission electron microscopy. The results show that the tunnels of the specimens feature a multi-layer structure consisting of an Al2O3 outer layer, an Al-Ti composite oxide middle layer, and an aluminum hydrate inner layer. The electrical properties of the specimens, such as the withstanding voltage and specific capacitance, were also measured. Compared to specimens without TiO2 coating, the specific capacitances of the TiO2-coated specimens are increased. The specific capacitance of the anode Al foil with TiO2 coating increased by 42% compared to that of a specimen without TiO2 coating when annealed at 550 °C for 10 min. These composite oxide films could enhance the specific capacitance of anode Al foils used in dielectric materials.

  20. Preparation and Characterization of BPO Film as Electrode for Using of FeRAM

    International Nuclear Information System (INIS)

    Xin-Yi, Wen; Jun, Yu; Yun-Bo, Wang; Wen-Li, Zhou; Jun-Xiong, Gao; Xiao-Hui, Chu

    2008-01-01

    Conductive perovskite BaPbO3 (BPO) films as a potential electrode material of PZT capacitors used in ferroelectric random access memory are prepared by rf magnetron sputtering. An x-ray diffractometer and standard four probe method are employed to investigate the dependence of growth conditions on crystal structure and conductivity of BPO films. It is found that BPO films with perovskite phase can be obtained at substrate temperatures above 425° C, and the sample with the lowest resistivity is obtained at 450° C under pure argon atmosphere. Using this BPO film as electrode, ferroelectric properties of BPO/PZT/BPO and Pt/PZT/BPO sandwiched structures are evaluated. Their remanent polarization and coercive field are 36.6μC/cm 2 (81.3kV/cm) and 36.9μC/cm 2 (89.1 kV/cm), respectively. The coercive field of the former structure is lower than that of the latter, but remanent polarizations are almost the same. In addition, the results imply that BPO electrode is helpful to improve the fatigue resistance of PZT. The reasons are discussed. (cross-disciplinary physics and related areas of science and technology)

  1. Structure and magnetization of Co4N thin film

    Science.gov (United States)

    Pandey, Nidhi; Gupta, Mukul; Gupta, Rachana; Rajput, Parasmani; Stahn, Jochen

    2018-02-01

    In this work, we studied the local structure and the magnetization of Co4N thin films deposited by a reactive dc magnetron sputtering process. The interstitial incorporation of N atoms in a fcc Co lattice is expected to expand the structure. This expansion yields interesting magnetic properties e.g. a larger magnetic moment (than Co) and a very high value of spin polarization ratio in Co4N . By optimizing the growth conditions, we prepared Co4N film having lattice parameter close to its theoretically predicted value. The N concentration was measured using secondary ion mass spectroscopy. Detailed magnetization measurements using bulk magnetization method and polarized neutron reflectivity confirm that the magnetic moment of Co in Co4N is higher than that of Co.

  2. Reversed preparation of low-density poly(divinylbenzene/styrene) foam columns coated with gold films

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Yinhai; Wang, Ni; Li, Yaling; Yao, Mengqi; Gan, Haibo; Hu, Wencheng, E-mail: huwc@uestc.edu.cn

    2016-06-15

    Highlights: • A reversed fabrication of low density foam columns coated with gold films was proposed. • The uniformity in thickness and purity of gold film are easy to be controlled. • A compact layer is prepared through an electrophoretic deposition method. • A low density (12 mg/cc) foam column coated with gold film is obtained. - Abstract: This work aims to fabricate low-density, porous, non-conductive, structural poly(divinylbenzene/styrene) foam columns by high-internal-phase emulsion templating. We prepare these non-conductive foam columns coated with a thin gold layer by electrochemical deposition and the reversed preparation technique. As expected, the density of the foam obtained through this novel method was about 12 mg cm{sup −3}, and the thickness of the gold coating was about 3 μm. We performed field emission scanning electron microscopy to morphologically and microstructurally characterize the products and X-ray diffraction and energy dispersive spectroscopy to determine the composition of the gold coating.

  3. Preparation and Characterization of Some Polyethylene Modified- Starch Biodegradable Films

    International Nuclear Information System (INIS)

    Badrana, A.S.; Ramadanb, A.M.; Ibrahim, N.A.; Kahild, T.; Hussienc, H.A.

    2005-01-01

    Blends of LDPE with soluble starch, wheat flour and commercial starch were prepared by mixing starch (or flour) with styrene then blending the mixture with LDPE, The starch percents vary between 5 and 50% of the total weight. Their physical and mechanical properties were recorded and compared with pure LDPE. It was observed that the increase in starch or wheat flour contents of the mixture was reversibly proportional to the tensile strength and % elongation. Samples were tested for water absorption. All of the samples were insoluble in cold and boiling water. Moisture uptake increased with immersion time and increasing starch content. The changes in the tensile strength of LDPE/starch (or wheat flour) after the course of thermal oxidation was measured. These results show negligible changes in the tensile strength of the control sample as compared to that of the samples containing the additives. Oxidation processes take advantage of the high temperatures (40-50 degree C) and the time. It was also observed that after 10 weeks of soil burial, the mechanical properties of the films decrease, mainly, due to starch removal from the films. Also, for the weight loss a drastic decrease was observed after 10 weeks of soil burial thereafter it preceded slowly. The LDPE/ starch strips showed weight loss after treating with a-amylase this due to hydrolysis and leaching of the starch. The rate of starch hydrolysis increases with the increase in starch content of the sample. The influence of addition of starch on the overall migration of these films, with different food simulant, was studied, at different temperatures (-4 degree. 25 degree and 40 degree C). All values were significantly lower than the upper limit for overall migration set by the EU (10 mg/dirf) for food grade plastics packaging materials

  4. Preparation and Characterization of Space Durable Polymer Nanocomposite Films from Functionalized Carbon Nanotubes

    Science.gov (United States)

    Delozier, D. M.; Connell, J. W.; Smith, J. G.; Watson, K. A.

    2003-01-01

    Low color, flexible, space durable polyimide films with inherent, robust electrical conductivity have been under investigation as part of a continuing materials development activity for future NASA space missions involving Gossamer structures. Electrical conductivity is needed in these films to dissipate electrostatic charge build-up that occurs due to the orbital environment. One method of imparting conductivity is through the use of single walled carbon nanotubes (SWNTs). However, the incompatibility and insolubility of the SWNTs severely hampers their dispersion in polymeric matrices. In an attempt to improve their dispersability, SWNTs were functionalized by the reaction with an alkyl hydrazone. After this functionalization, the SWNTs were soluble in select solvents and dispersed more readily in the polymer matrix. The functionalized SWNTs were characterized by Raman spectroscopy and thermogravimetric analysis (TGA). The functionalized nanotubes were dispersed in the bulk of the films using a solution technique. The functionalized nanotubes were also applied to the surface of polyimide films using a spray coating technique. The resultant polyimide nanocomposite films were evaluated for nanotube dispersion, electrical conductivity, mechanical, and optical properties and compared with previously prepared polyimide-SWNT samples to assess the effects of SWNT functionalization.

  5. Preparation and characterization of bionanocomposite films based on potato starch/halloysite nanoclay.

    Science.gov (United States)

    Sadegh-Hassani, Fatemeh; Mohammadi Nafchi, Abdorreza

    2014-06-01

    In this research casting method was used to prepare potato starch based bio-nanocomposite films with halloysite nanoclay as the reinforcing materials. The composition included potato starch with 40% (w/w) of a mixture of sorbitol/glycerol (weight ratio of 3 to 1as plasticizer) with nanoclay (0-5% w/w). The films were dried under controlled conditions. Physicochemical properties such as solubility in water, water absorption capacity (WAC), water vapour permeability (WVP), oxygen permeability, and mechanical properties of the films were measured. Results showed that by increasing the concentration of nanoclay, mechanical properties of films were improved. Tensile strength was increased from 7.33 to 9.82MPa, and elongation at break decreased from 68.0 to 44.0%. Solubility in water decreased from 35 to 23%, and heat seal strength increased from 375 to 580N/m. Also incorporation of clay nanoparticles in the structure of biopolymer decreased permeability of the gaseous molecules. In summary, addition of halloysite nanoclay, improve the barrier and mechanical properties of potato starch films and this bionanocomposites have high potential to be used for food packaging purposes. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

    Energy Technology Data Exchange (ETDEWEB)

    Biederman, H.; Holland, L. (Sussex Univ., Brighton (UK). Lab. for Plasma Materials Processing)

    1983-07-01

    Fluorocarbon films have been prepared by plasma polymerization of CF/sub 4/ using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an R.F. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF/sub 4/(25%)-argon(75%) mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF/sub 4/(87%)-argon(13%) were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF/sub 4/ as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined.

  7. Amorphous carbon nitrogenated films prepared by plasma immersion ion implantation and deposition

    International Nuclear Information System (INIS)

    Rangel, Elidiane C.; Durrant, Steven F.; Rangel, Rita C.C.; Kayama, Milton E.; Landers, Richard; Cruz, Nilson C. da

    2006-01-01

    In this work, an investigation was conducted on amorphous hydrogenated-nitrogenated carbon films prepared by plasma immersion ion implantation and deposition. Glow discharge was excited by radiofrequency power (13.56 MHz, 40 W) whereas the substrate-holder was biased with 25 kV negative pulses. The films were deposited from benzene, nitrogen and argon mixtures. The proportion of nitrogen in the chamber feed (R N ) was varied against that of argon, while keeping the total pressure constant (1.3 Pa). From infrared reflectance-absorbance spectroscopy it was observed that the molecular structure of the benzene is not preserved in the film. Nitrogen was incorporated from the plasma while oxygen arose as a contaminant. X-ray photoelectron spectroscopy revealed that N/C and O/C atomic ratios change slightly with R N . Water wettability decreased as the proportion of N in the gas phase increased while surface roughness underwent just small changes. Nanoindentation measurements showed that film deposition by means of ion bombardment was beneficial to the mechanical properties of the film-substrate interface. The intensity of the modifications correlates well with the degree of ion bombardment

  8. Preparation of polystyrene brush film by radical chain-transfer polymerization and micromechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Jing [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Chen Miao [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: miaochen99@yahoo.com; An Yanqing [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Liu Jianxi [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Yan Fengyuan [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: fyyan@lzb.ac.cn

    2008-12-30

    A radical chain-transfer polymerization technique has been applied to graft-polymerize brushes of polystyrene (PSt) on single-crystal silicon substrates. 3-Mercapto-propyltrimethoxysilane (MPTMS), as a chain-transfer agent for grafting, was immobilized on the silicon surface by a self-assembling process. The structure and morphology of the graft-functionalized silicon surfaces were characterized by the means of contact-angle measurement, ellipsometric thickness measurement, Fourier transformation infrared (FTIR) spectroscopy, and atomic force microscopy (AFM). The nanotribological and micromechanical properties of the as-prepared polymer brush films were investigated by frictional force microscopy (FFM), force-volume analysis and scratch test. The results indicate that the friction properties of the grafted polymer films can be improved significantly by the treatment of toluene, and the chemically bonded polystyrene film exhibits superior scratch resistance behavior compared with the spin-coated polystyrene film. The resultant polystyrene brush film is expected to develop as a potential lubrication coating for microelectromechanical systems (MEMS)

  9. Preparation and characterization of bionanocomposite film based ontapioca starch/bovine gelatin/nanorod zinc oxide

    DEFF Research Database (Denmark)

    Mehdi Marvizadeh, Mohammad; Oladzadabbasabadi, Nazila; Mohammadi Nafchi, Abdorreza

    2017-01-01

    , as well as the barrier properties of bionanocomposite films were investigated. X-ray diffraction analysis showed that the bionanocomposite film incorporated with ZnOsingle bondN at a concentration of 3.5% w/w exhibited high intensity peaks compared with control samples. Results of UV–vis spectra analysis......To exploring a nano-packaging materials for using as coating or edible films, tapioca starch/gelatin/nanorod ZnO (ZnOsingle bondN) bionanocomposites were prepared via solution casting technique. The effects of nanofiller addition on the mechanical, physicochemical, and crystalline structures...... showed that incorporation of ZnOsingle bondN into the films can absorb the whole UV light. Tensile strength of the films was increased from 14 to 18 MPa whereas elongation at breaks decreased from 18 to 8 percent and oxygen permeability decreased from 151.03 to 91.52 cm3 μm/(m2–day) by incorporation of 3...

  10. Studying the structural and optical properties of Zn O:Cu prepared by APCVD technique

    International Nuclear Information System (INIS)

    Manssor, M.

    2012-01-01

    Undoped and Cu-doped Zn O ant (3-9 wt.%) thin films have been prepared by APCVD technique on glass substrates at 500 degree.The structural and optical properties of these films were studied. The results of the structural tests showed that these films are of a polycrystalline hexagonal structure with a preferred orientation in the (002) direction, the optical properties included transmittance, energy gap, ob sorption coefficient, reflectance, refractive index and extinction coefficient, the energy gap values were found to decrease from (3.25 to 3.15 eV) and the average transmittance was found about (90%) in the visible region. (author).

  11. Hybrid AC EL structures with thin protective ZnO film

    International Nuclear Information System (INIS)

    Tsvetkova, E; Dikov, H; Kolentsov, K; Yourukova, L; Zhechev, D; Steflekova, V

    2008-01-01

    Alternating current hybrid electroluminescent Al/SnO 2 /ZnS: Cu/ZnO/Al structures with blue emission have been prepared. In these ZnO films are used as protective layers. The optical properties of different RF magnetron sputtered ZnO films have been studied. The voltage - brightness characteristics of AC EL structures with a ZnO protective film and conventional structures with a TiO 2 protective layer are compared. The investigation shows that the brightness of the structures with a ZnO protective film is higher. The improved characteristics of these new hybrid structures could be used in preparing various systems for representation of permanent or variable light information

  12. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  13. Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

    Directory of Open Access Journals (Sweden)

    Kavitha A.

    2017-02-01

    Full Text Available The present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode and without (diode mode supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2 plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W. The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W.

  14. Studies of the composition, mechanical and electrical properties of N-doped carbon films prepared by DC-MFCAD

    International Nuclear Information System (INIS)

    Wen, F.; Huang, N.; Leng, Y.X.; Wang, J.; Sun, H.; Li, Y.J.; Wang, Z.W.

    2006-01-01

    N-doped carbon films were prepared on Si(1 0 0) and Ti-6Al-4V substrates using direct current magnetically filtered cathodic arc deposition (DC-MFCAD) at room temperature for various different N 2 pressures. The structure and composition of the films were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Ball-on-disk and microhardness tests were used to characterize the mechanical properties of the films, and Hall effect tests were employed to study the electrical properties

  15. Effect of sodium admixtures on properties of Cd1-xZnxS films prepared by pulverization

    International Nuclear Information System (INIS)

    Bajramov, A.I.; Dzhafarov, T.D.; Nadzhafov, Kh.I.; Novruzov, V.D.; Rzakuliev, N.A.

    1992-01-01

    A study was made on the effect of sodium additions, introduced during deposition, on structure, electric, optical and luminescence properties of Cd 1-x Zn x S films of fixed composition (x = 0.15), as well as on photoelectric properties of Cu 2 S/Cd 1-x Zn x S heterophotoelements, prepared on the basis of such films. It is shown that sodium introduction into composition of Cd 1-x Zn x S films leads to decrease of their specific resistance, growth of transparency in the region of optical transmission, increase of primary grain orientation along [101] axis

  16. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  17. Infrared and Raman spectroscopy study of AsS chalcogenide films prepared by plasma-enhanced chemical vapor deposition.

    Science.gov (United States)

    Mochalov, Leonid; Dorosz, Dominik; Kudryashov, Mikhail; Nezhdanov, Aleksey; Usanov, Dmitry; Gogova, Daniela; Zelentsov, Sergey; Boryakov, Aleksey; Mashin, Alexandr

    2018-03-15

    AsS chalcogenide films, where As content is 60-40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV-visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the "usual" AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Preparation and characterization of chitosan/ZnAl2O4 films

    International Nuclear Information System (INIS)

    Araujo, P.M.A.G.; Santos, P.T.A.; Rodrigues, P.A.; Costa, A.C.F.M.; Araujo, E.M.

    2012-01-01

    Chitosan films have been explored for biomedical application, as the chitosan to be, low toxicity, abundant in nature, show affinity for dispersion loads and high mechanical strength. On the other hand, ZnAl 2 O 4 has energy gap of approximately 3.8 eV, which makes it useful for use as photoelectric device ultraviolet. Thus, this work has as objective to prepare films of quitosana/ZnAl 2 O 4 in proportions of 5:1, 5:2, 5:3, 5:4 and evaluate the structural, morphological and thermals characteristics. To this end, ZnAl2O4 first nanoparticles (NPs) was deagglomerated and 325 mesh sieve and added to chitosan diluted in 1% acetic acid, and dried at 60°C. After drying, a solution of 1M sodium hydroxide was added to obtain a film with neutral pH. The films were characterized by XRD, SEM and TG. For all proportions evaluated it was verified the presence of ZnAl 2 O)4 and chitosan phases. By micrographs, it was observed that there was formation of agglomerates of ZnAl 2 O 4 NPs both on the surface of the films, the encapsulated in chitosan. In all samples the ratio 5:4 showed the greatest consistency both in relation to the film surface of the nanoparticles in the chitosan matrix. TG/DTA curves of quitosana/ZnAl 2 O 4 film for all the samples showed that for the concentration of 5:1 to 5:3 occurred three mass loss while for concentration of 5:2 to 5:4 were only two stages decomposition. (author)

  19. Electrochemical preparation and characterization of CuInSe2 thin films for photovoltaic applications

    International Nuclear Information System (INIS)

    Guillen Arqueros, C.

    1992-01-01

    The objective of this work has been to investigate the electrodeposition as a low-cost, large-area fabrication process to obtain CuInSe 2 this films for efficient photovoltaic devices. this objective entails the elucidation of thin film deposition mechanism, the study of the fundamental properties of electrodeposited material, and also the modification of their physical and chemical parameters for photovoltaic applications. CuInSe 2 thin films have been successfully electrodeposited from a citric was characterized by compositional, structural, electrical, optical and electrochemical measurements, relating their properties with the preparation parameters and also studying the effect of various thermal and chemical treatments. The results showed post-deposition treatment are needed for optimizing these films for solar cells fabrication: first, an annealing in inert atmosphere at temperatures above 400 degrees celsius to obtain a high recrystallization in the chalcopyrite structure, and after a chemical etching in KCN solution to remove secondary phases of Cu x Se and Se which are frequently electrodeposited with the CuInSe 2 . The treated samples showed appropriate photovoltaic activity in a semiconductor-electrolite liquid junction. (author) 193 ref

  20. Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Ziad Y. Banyamin

    2014-10-01

    Full Text Available Fluorine doped tin oxide (FTO coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size, optical (transmission, optical band-gap and electrical (resistivity, charge carrier, mobility properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10−3 Ω·cm, a carrier concentration (Nd of 1.46 × 1020 cm−3 and a mobility of 15 cm2/Vs.

  1. Preparation and characterization of chitosan-based antimicrobial active food packaging film incorporated with apple peel polyphenols.

    Science.gov (United States)

    Riaz, Asad; Lei, Shicheng; Akhtar, Hafiz Muhammad Saleem; Wan, Peng; Chen, Dan; Jabbar, Saqib; Abid, Muhammad; Hashim, Malik Muhammad; Zeng, Xiaoxiong

    2018-07-15

    In the present study, apple peel polyphenols (APP) were incorporated into chitosan (CS) to develop a novel functional film. Scanning electron microscopy, Fourier transform-infrared spectroscopy and thermogravimetric analyses were performed to study the structure, potential interaction and thermal stability of the prepared films. Physical properties including moisture content, density, color, opacity, water solubility, swelling ration and water vapor permeability were measured. The results revealed that addition of APP into CS significantly improved the physical properties of the film by increasing its thickness, density, solubility, opacity and swelling ratio whereas moisture content and water vapor permeability were decreased. Tensile strength and elongation at break of the CS-APP film with 1% APP was 16.48MPa and 13.33%, respectively, significantly lower than those for CS control film. Thermal stability of the prepared films was decreased while antioxidant and antimicrobial activities of the CS-based APP film were significantly increased. CS-APP film with 0.50% APP concentration exhibited good mechanical and antimicrobial properties, indicating that it could be developed as bio-composite food packaging material for the food industry. Copyright © 2018 Elsevier B.V. All rights reserved.

  2. Preparation and characterization of CuInSe2 particles via the hydrothermal route for thin-film solar cells

    International Nuclear Information System (INIS)

    Wu, Chung-Hsien; Chen, Fu-Shan; Lin, Shin-Hom; Lu, Chung-Hsin

    2011-01-01

    Highlights: → A new hydrothermal process for preparing copper indium diselenide (CuInSe 2 ). → Well-crystallized CuInSe 2 particles are obtained at 180 deg. C for 1 h. → Densified CuInSe 2 thin films are prepared from ink printing. → Increasing temperatures result in an improvement of properties of CuInSe 2 films. - Abstract: CuInSe 2 powders with a chalcopyrite structure used in thin-film solar cells were successfully prepared via a hydrothermal method at low temperatures within short durations. Well-crystallized CuInSe 2 particles were formed via the hydrothermal reaction at 180 deg. C for 1 h. The concentrations of stabilizer, triethanolamine (TEA), significantly affected the purity, morphology and particle sizes of the prepared powders. Increasing the reaction duration and temperatures led to decrease the amount of second phase In(OH) 3 and resulted in the formation of pure CuInSe 2 . Densified CuInSe 2 thin films were prepared from ink printing with the addition of the flux. Increasing the selenization temperatures increased the grain size and improved the crystallinity of CuInSe 2 films.

  3. Characterization of film-forming solutions and films incorporating free and nanoencapsulated tea polyphenol prepared by gelatins with different Bloom values

    Science.gov (United States)

    Gelatin film-forming solutions and their films incorporating tea polyphenol (TP) and chitosan nanoparticles (CSNs) were prepared from gelatins with different Bloom values (100, 150 and 225). Blank gelatin film-forming solutions and films were prepared as controls. Gelatins with higher Bloom values h...

  4. The effect of water on the electrochromic properties of WO{sub 3} films prepared by vacuum and chemical methods

    Energy Technology Data Exchange (ETDEWEB)

    Leftheriotis, G.; Papaefthimiou, S.; Yianoulis, P. [Department of Physics, University of Patras, Patras 26500 (Greece)

    2004-06-01

    We present a comparative study on the effect of absorbed water on the properties of tungsten oxide films prepared by two different methods (e-gun evaporation, and an aqueous sol-gel technique). Scanning electron microscopy, Fourier transform infrared spectroscopy and electrochemical techniques have been used to assess the film properties. It has been found that the preparation method of the films greatly affects their water content and thus, electron gun evaporated films have less water incorporated into their structure than their sol-gel counterparts. The former are closely packed and transparent with most of their water content adsorbed on their surface, while the latter have a porous structure, being opaque, highly hydroxylated and hydrated to a lesser extent. Both types of films exhibit reversible electrochromism, with the evaporated films being stable up to 5000 coloration-bleaching cycles and the sol-gel ones gradually degrading after 1000 cycles. Irreversible Li{sup +} trapping related to the presence of water and hydroxyl radicals has been envisaged as the cause of the inferior cycling stability of the sol-gel films.

  5. Polysulfobetaine films prepared by electrografting technique for reduction of biofouling on electroconductive surfaces

    International Nuclear Information System (INIS)

    Stach, Marek; Kronekova, Zuzana; Kasak, Peter; Kollar, Jozef; Pentrak, Martin; Micusik, Matej; Chorvat, Dusan; Nunney, Tim S.; Lacik, Igor

    2011-01-01

    The sulfobetaine films were prepared on stainless steel and golden surfaces. In the first step, the poly(2-(dimethylamino)ethyl methacrylate) film was created by employing the electrografting polymerization technique. In the second step, this film was modified to polysulfobetaine, i.e. the polymer film bearing the zwitterionic groups. The presence of the electrografted film and its modification were determined by contact angle measurements, infrared spectroscopy in reflectance mode and X-ray photoelectron spectroscopy. The prepared films were homogeneous with the thickness from about 5 to 26 nm as determined by X-ray photoelectron spectroscopy. The atomic force microscopy measurements showed the increase of surface roughness upon the surface coating. In vitro tests using adherent RAT-2 fibroblast cells and fluorescently labelled bovine serum albumin proteins showed that prepared polysulfobetaine films can be used in applications requiring the resistance against cell attachment and biofouling.

  6. Titanium-silicon films prepared by spin and dip-coating

    International Nuclear Information System (INIS)

    Nassar, Eduardo J.; Ciuffi, Katia J.; Goncalves, Rogeria R.; Messaddeq, Younes; Ribeiro, Sidney J.L.

    2003-01-01

    The conditions for the preparation of luminescent materials, consisting of Eu 3+ ions entrapped in a titanium matrix, in the form of a thin film, using the sol-gel process, are described. The films were obtained from sols prepared with TEOS and TEOT, in the presence of acetylacetone as the hydrolysis-retarding agent, using the dip-coating and spin-coating techniques. The influence of these techniques on the films based on titanium and silicon are presented. The Eu 3+ was used as a luminescent probe. The films have been characterized by luminescence, reflection and transmittance. The thickness of the films could be related to the preparation procedure. Transparent thin films have been prepared by dip-coating technique. (author)

  7. Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

    Science.gov (United States)

    Niikura, Chisato; Masuda, Atsushi; Matsumura, Hideki

    1999-07-01

    Polycrystalline Si (poly-Si) films with high crystalline fraction and low dangling-bond density were prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical conduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline and amorphous phases in poly-Si films using anisotropic electrical conduction was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density for Cat-CVD poly-Si films was achieved using the condition to make the quality of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications.

  8. Electronic structure of semiconductor thin films (chalcopyrites) as absorbermaterials for thin film solar cells

    International Nuclear Information System (INIS)

    Lehmann, Carsten

    2007-01-01

    The objective of this work was to determine for the first time the band structure of CuInS 2 . For this purpose a new GSMBE process with TBDS as sulphur precursor was established to prevent the use of elemental sulphur in an UHV system. Additionally to the deposited films a cleave surface was prepared. The samples were characterized in situ by XPS/UPS and LEED. XRD and SEM were used for further ex situ investigations. The band structure was determined by ARUPS using synchrotron light. CuInS(001) and CuInS 2 (112) were deposited on Si and GaAs. The deposition of CuInS 2 on GaAs showed a strong dependence on the existing surface reconstruction. A 2 x 1 reconstruction of GaAs(001) yielded CuInS 2 (001) films featuring terraces. A deposition on 2 x 2 reconstructed GaAs(111)A surfaces led to a facetted CuInS 2 surface. On sulphur-passivated non-reconstructed GaAs(111)B a deposition of chalcopyrite ordered CuInS 2 free of facets was possible. On the surface of Cu-rich CuInS 2 films CuS crystallites formed. This yields ARUPS spectra showing the electronic stucture of CuInS 2 superimposed by non-dispergative states of the polycrystalline CuS segregations. The effective hole masses were derived from the k vertical stroke vertical stroke measurements. Finally the results of this work showed that the use of a (111) substrate leads to domain formation of the deposited CuInS 2 (112) films. Thus ARUPS spectra of such films show a superposition of the band structures along different directions. (orig.)

  9. Preparation and study on the structure of keratin/PVA membrane containing wool fibers

    Science.gov (United States)

    Wu, Min; Shen, Shuming; Yang, Xuhong; Tang, Rencheng

    2017-10-01

    The urea / sodium sulfide / sodium dodecyl sulfate (SDS) method was used to dissolve the wool in this study. Then the Wool fiber/keratin/PVA composites with different proportions were prepared, and the surface morphology, molecular structure, mechanical property of the composite films and the influence of the proportions on their structure and properties were studied. The results showed that, there are α-helix structure, β-sheet and random coil conformations in the pure keratin film, as well as in the wool fiber. Compared with wool fiber, the crystallinity of keratin decreased. PVA can obviously improve the mechanical property of the blended film. When the blended ratio of keratin/PVA is 20/80, the mechanical property of the blended film is greatly improved. The composite films with 8%-16% of wool fibers have better flexibility than those without wool fibers.

  10. Microstructure of a-C:H films prepared on a microtrench and analysis of ions and radicals behavior

    Science.gov (United States)

    Hirata, Yuki; Choi, Junho

    2015-08-01

    Amorphous carbon films (a-C:H) were prepared on a microtrench (4-μm pitch and 4-μm depth), and the uniformity of film thickness and microstructure of the films on the top, sidewall, and bottom surfaces of the microtrench were evaluated by scanning electron microscopy and Raman spectroscopy. The a-C:H films were prepared by bipolar-type plasma based ion implantation and deposition (bipolar PBII&D), and the negative pulse voltage, which is the main parameter dominating the film structure, was changed from -1.0 to -15 kV. Moreover, the behavior of ions and radicals was analyzed simultaneously by combining the calculation methods of Particle-In-Cell/Monte Carlo Collision (PIC-MCC) and Direct Simulation Monte Carlo (DSMC) to investigate the coating mechanism for the microtrench. The results reveal that the thickness uniformity of a-C:H films improves with decreasing negative pulse voltage due to the decreasing inertia of incoming ions from the trench mouth, although the film thickness on the sidewall tends to be much smaller than that on the top and bottom surfaces of the trench. The normalized flux and the film thickness show similar behavior, i.e., the normalized flux or thickness at the bottom surface increases at low negative pulse voltages and then saturates at a certain value, whereas at the sidewall it monotonically decreases with increasing negative voltage. The microstructure of a-C:H films on the sidewall surface is very different from that on the top and bottom surfaces. The film structure at a low negative pulse voltage shifts to more of a polymer-like carbon (PLC) structure due to the lower incident energy of ions. Although the radical flux on the sidewall increases slightly, the overall film structure is not significantly changed because this film formation at a low negative voltage is originally dominated by radicals. On the other hand, the flux of radicals is dominant on the sidewall in the case of high negative pulse voltage, resulting in a deviation

  11. Microstructure of a-C:H films prepared on a microtrench and analysis of ions and radicals behavior

    Energy Technology Data Exchange (ETDEWEB)

    Hirata, Yuki; Choi, Junho, E-mail: choi@mech.t.u-tokyo.ac.jp [Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-08-28

    Amorphous carbon films (a-C:H) were prepared on a microtrench (4-μm pitch and 4-μm depth), and the uniformity of film thickness and microstructure of the films on the top, sidewall, and bottom surfaces of the microtrench were evaluated by scanning electron microscopy and Raman spectroscopy. The a-C:H films were prepared by bipolar-type plasma based ion implantation and deposition (bipolar PBII&D), and the negative pulse voltage, which is the main parameter dominating the film structure, was changed from −1.0 to −15 kV. Moreover, the behavior of ions and radicals was analyzed simultaneously by combining the calculation methods of Particle-In-Cell/Monte Carlo Collision (PIC-MCC) and Direct Simulation Monte Carlo (DSMC) to investigate the coating mechanism for the microtrench. The results reveal that the thickness uniformity of a-C:H films improves with decreasing negative pulse voltage due to the decreasing inertia of incoming ions from the trench mouth, although the film thickness on the sidewall tends to be much smaller than that on the top and bottom surfaces of the trench. The normalized flux and the film thickness show similar behavior, i.e., the normalized flux or thickness at the bottom surface increases at low negative pulse voltages and then saturates at a certain value, whereas at the sidewall it monotonically decreases with increasing negative voltage. The microstructure of a-C:H films on the sidewall surface is very different from that on the top and bottom surfaces. The film structure at a low negative pulse voltage shifts to more of a polymer-like carbon (PLC) structure due to the lower incident energy of ions. Although the radical flux on the sidewall increases slightly, the overall film structure is not significantly changed because this film formation at a low negative voltage is originally dominated by radicals. On the other hand, the flux of radicals is dominant on the sidewall in the case of high negative pulse voltage, resulting in a

  12. Preparation of transparent conducting zinc oxide films by rf reactive sputtering

    International Nuclear Information System (INIS)

    Vasanelli, L.; Valentini, A.; Losacco, A.

    1986-01-01

    Transparent conducting zinc oxide films have been prepared by reactive sputtering in a Ar/H/sub 2/ mixture. The optical and electrical properties of the films are presented and discussed. The effects of some post-deposition thermal treatment have been also investigated. ZnO/CdTe heterojunctions have been prepared by sputtering ZnO films on CdTe single crystals. The photovoltaic conversion efficiencies of the obtained solar cells was 6.8%

  13. Composition and structural analysis of Sm-Co thin films on (100)Si

    International Nuclear Information System (INIS)

    Ghantasala, M.; Sood, D.K.; Mohan, S.

    1998-01-01

    Full text: The necessity of integration of magnetics with silicon processing technology became essential with the advent of Micro Electromechanical Systems (MEMS). The need to control the crystalline and magnetic properties of the magnetic thin films on silicon substrates has been the primary motivation for this work. The major objective of this work is to prepare the stoichiometric and crystalline SmCo 5 thin films with good magnetic properties on single crystal silicon substrate. We have prepared the SmCo think films on single crystal (100) silicon substrates using DC magnetron sputtering. Films have been prepared in pure argon as the sputter media at two different pressures 2 x 10 -2 torr and 2 x 10 3 torr with the substrates kept at room temperature, 500 and 700 deg C separately. These films have been characterised using RBS, XRD and SEM. RBS analysis showed that the films are nearly stoichiometric (1:4.9) and have significant amounts of oxygen as impurity. But XRD studies indicated that the as deposited films (at all substrate temperatures) are yet to form the crystalline structure. Some of the films have been subjected to rapid thermal annealing at two different temperatures at 800 and 1000 deg C for 30 secs in an effort to crystallise the films. RBS analysis of these films indicated that the room temperature and post annealed films at 1000 deg C resulted in considerable interdiffusion characteristics, whereas the high temperature deposited (500 and 700 deg C) and annealed films showed relatively very stable characteristics with minimal diffusion between the film and the substrate. XRD and SEM analysis of the films is in progress. The detailed results of these investigations will be presented

  14. Enhanced electrochromic properties of TiO2 nanoporous film prepared based on an assistance of polyethylene glycol

    Science.gov (United States)

    Xu, Shunjian; Luo, Xiaorui; Xiao, Zonghu; Luo, Yongping; Zhong, Wei; Ou, Hui; Li, Yinshuai

    2017-01-01

    Polyethylene glycol (PEG) was employed as pore-forming agent to prepare TiO2 nanoporous film based on spin-coating a TiO2 nanoparticle mixed paste on fluorine doped tin oxide (FTO) glass. The electrochromic and optical properties of the obtained TiO2 film were investigated by cyclic voltammetry (CV), chronoamperometry (CA) and UV-Vis spectrophotometer. The results show that the PEG in the mixed paste endows the TiO2 film with well-developed porous structure and improves the uniformity of the TiO2 film, which are helpful for the rapid intercalation and extraction of lithium ions within the TiO2 film and the strengthening of the diffuse reflection of visible light in the TiO2 film. As a result, the TiO2 film derived from the mixed paste with PEG displays higher electrochemical activity and more excellent electrochromic performances compared with the TiO2 film derived from the mixed paste without PEG. The switching times of coloration/bleaching are respectively 10.16/5.65 and 12.77/6.13 s for the TiO2 films with PEG and without PEG. The maximum value of the optical contrast of the TiO2 film with PEG is 21.2% while that of the optical contrast of the TiO2 film without PEG is 14.9%. Furthermore, the TiO2 film with PEG has better stability of the colored state than the TiO2 film without PEG.

  15. Solvent properties of hydrazine in the preparation of metal chalcogenide bulk materials and films.

    Science.gov (United States)

    Yuan, Min; Mitzi, David B

    2009-08-21

    A combination of unique solvent properties of hydrazine enables the direct dissolution of a range of metal chalcogenides at ambient temperature, rendering this an extraordinarily simple and soft synthetic approach to prepare new metal chalcogenide-based materials. The extended metal chalcogenide parent framework is broken up during this process, and the resulting metal chalcogenide building units are re-organized into network structures (from 0D to 3D) based upon their interactions with the hydrazine/hydrazinium moieties. This Perspective will review recent crystal and materials chemistry developments within this family of compounds and will briefly discuss the utility of this approach in metal chalcogenide thin-film deposition.

  16. Preparation, electrical and optical properties of evaporated thin films of CuPbI3

    International Nuclear Information System (INIS)

    Kuku, T.A.; Azi, S.O.

    1995-10-01

    Thin films of CuPbl 3 have been prepared by a vacuum evaporation process. X-ray analysis gives structural parameters in consonance with the bulk powder form of the material. The film however preferring a growth in the [002] direction. Electrical conductivity indicates an activated process with two activation energies being 0.45 eV for T ≤ 373 K, and 0.6 eV for T ≥ 373 K. Both are interpreted to be due to the transport of anionic carriers in the phases existing below and beyond 373 K respectively. Optical characterization reveals a material with high absorption coefficient, with α ≥ 10 4 cm -1 . The material is characterized by a direct absorption with the direct edge at 1.64 eV. (author). 13 refs, 5 figs

  17. Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

    Directory of Open Access Journals (Sweden)

    Hüpkes J.

    2011-10-01

    Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

  18. Preparation and characterization of Ge2Sb2Te5 phase change films on elastic substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Hongbing; Thelander, Erik; Benke, Julia; Rauschenbach, Bernd [Leibniz Institute of Surface Modification, 04318 Leipzig (Germany)

    2012-07-01

    Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) thin films have attracted a great deal of interest as an active layer for data storage media due to its high switching rate and extremely good reversibility. Here we demonstrate the preparation of high-quality GST films on elastic polyimide substrates by pulsed laser deposition (PLD). The composition and chemical state of the films were investigated by energy dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS), respectively. The effect of annealing temperature on the crystalline nature of the films was also studied. As-deposited films were found to be amorphous. Crystalline phases with face-centered cubic and hexagonal structures appeared at 180 and 300 degrees, respectively. Importantly, no phase separation could be seen in the annealed films. Furthermore, reflectivity measurements were performed to characterize the as-deposited and annealed films, showing a high reflectivity contrast (up to 23%) between full crystalline and amorphous films. Our results indicate that PLD deposited GST film on polyimide substrate is a promising candidate for use in future flexible memory devices.

  19. Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Huang, Tzu-Teng

    2013-06-15

    Indium gallium zinc oxide (IGZO) transparent semiconductor thin films were prepared by KrF excimer laser annealing of sol–gel derived precursor films. Each as-coated film was dried at 150 °C in air and then annealed using excimer laser irradiation. The influence of laser irradiation energy density on surface conditions, optical transmittances, and electrical properties of laser annealed IGZO thin films were investigated, and the physical properties of the excimer laser annealed (ELA) and the thermally annealed (TA) thin films were compared. Experimental results showed that two kinds of surface morphology resulted from excimer laser annealing. Irradiation with a lower energy density (≤250 mJ cm{sup −2}) produced wavy and irregular surfaces, while irradiation with a higher energy density (≥350 mJ cm{sup −2}) produced flat and dense surfaces consisting of uniform nano-sized amorphous particles. The explanation for the differences in surface features and film quality is that using laser irradiation energy to form IGZO thin films improves the film density and removes organic constituents. The dried IGZO sol–gel films irradiated with a laser energy density of 350 mJ/cm{sup 2} had the best physical properties of all the ELA IGZO thin films. The mean resistivity of the ELA 350 thin films (4.48 × 10{sup 3} Ω cm) was lower than that of TA thin films (1.39 × 10{sup 4} Ω cm), and the average optical transmittance in the visible range (90.2%) of the ELA 350 thin films was slightly higher than that of TA thin films (89.7%). - Highlights: • IGZO semiconductor films were prepared by laser annealing of sol–gel derived films. • Surface roughness and resistivity of ELA samples were affected by energy density. • The ELA 350 IGZO film exhibited the best properties among all of ELA IGZO films. • Transmittance and resistivity of ELA 350 films are greater than those of TA films.

  20. Preparation of three-dimensionally ordered macroporous polycysteine film and application in sensitive detection of 4-chlorophenol

    International Nuclear Information System (INIS)

    Zhang, Shenghui; Shi, Zhen; Wang, Jinshou; Cheng, Qin; Wu, Kangbing

    2014-01-01

    Highlights: • Polycysteine film with three-dimensionally ordered porous structures was prepared. • 3-DOM polycysteine film exhibited large active area and signal enhancement effects. • 3-DOM polycysteine film increased oxidation signal of 4-chlorophenol by 5-fold. - Abstract: Polystyrene microspheres with diameter of 350 nm were prepared, and then used to arrange on the surface of glassy carbon electrode (GCE) as structure-directing template. By successive cyclic sweeps between −1.0 V and 2.0 V in pH 7 phosphate buffer containing 10 mM cysteine, polycysteine film was electrodeposited on polystyrene microspheres-arranged GCE. After removing polystyrene template, a three-dimensionally ordered macroporous (3-DOM) polycysteine film was achieved, as confirmed by scanning electron microscopy measurements. Electrochemical responses of K 3 [Fe(CN) 6 ] probe indicated that 3-DOM polycysteine film-modified GCE exhibited larger active area, compared with GCE, polycysteine film-modified GCE and electrochemically oxidized GCE. The application of 3-DOM polycysteine film in electrochemical detection of 4-chlorophenol was studied. Due to ordered porous structures, the 3-DOM polycysteine film-modified GCE displayed signal enhancement effects, and enhanced the oxidation peak currents of 4-chlorophenol. As a result, a sensitive electrochemical method was developed for the detection of 4-chlorophenol, and the detection limit was 1.67 × 10 −8 M. This new method was used to detect 4-chlorophenol in water samples, and the value of recovery was over the range from 99.6% to 107%

  1. Preparation of reinforced poly(ethylene oxide) blend hydrogel films containing a drug and assessment of their properties

    International Nuclear Information System (INIS)

    Yang Zhanshan; Zhu Nankang; Yang Shuqin

    1999-01-01

    Reinforced poly(ethylene oxide) blend hydrogen films containing mafenide acetate were prepared by using two freezing-thawing cycles and the irradiation crosslinking technique, and their properties and the drug release were assessed. The results showed that the tensile strength of the reinforced PEO blend hydrogel films increased significantly (p < 0.01), the gel fraction and the elongation at break of the films increased slightly as compared with those formed by the irradiation without the freezing-thawing treatment, indicating that the mechanical properties of the PEO blend hydrogel films can be improved by the freezing-thawing cycles. The reinforced films possessed an ideal flexibility, crosslinking density and elasticity as wound dressings. Swelling studies showed that the equilibrium water content of the hydrogel films expressed in the degree of swelling decreased significantly (p < 0.01), suggesting that a significant structural rearrangement of the films occurred during the freezing process. The structural densification resulted in the increase of the mechanical strength of the hydrogel films. The hydrogels formed by the irradiation at doses of 40 kGy were comparatively stronger. Release studies were run on the reinforced hydrogels with mafenide acetate which was incorporated before the freezing-thawing treatment. Release was followed over seven days. The drug transport was controlled by a regular diffusion model

  2. Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Zhenguo [College of Electronic Information, Hangzhou Dianzi University, Hangzhou (China); State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China); Xi, Junhua; Huo, Lijuan; Zhao, Yi [State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China)

    2008-07-01

    P-type transparent conducting tin-antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X-ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb{sub 2}O{sub 4}. UV-Visible absorption and transmittance spectra showed that the optical band-gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p-type conducting TAO films. It was found that 0.19films could be obtained. Hole concentration as high as 4.03 x 10{sup 19} cm{sup -3} and electrical resistivity as low as 0.155 {omega}cm were achieved, showing potential applications of TAO films as p-type transparent conducting films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Electrochemical preparation of poly(methylene blue)/graphene nanocomposite thin films

    International Nuclear Information System (INIS)

    Erçarıkcı, Elif; Dağcı, Kader; Topçu, Ezgi; Alanyalıoğlu, Murat

    2014-01-01

    Highlights: • Poly(MB)/graphene thin films are prepared by a simple electrochemical approach. • Graphene layers in the film show a broad band in visible region of absorbance spectra. • Morphology of composite films indicates both disordered and ordered regions. • XRD reveals that nanocomposite films include rGO layers after electropolymerization process. • Chemically prepared graphene is better than electrochemically prepared graphene for electrooxidation of nitrite. - Abstract: Poly(methylene blue)/graphene nanocomposite thin films were prepared by electropolymerization of methylene blue in the presence of graphene which have been synthesized by two different methods of a chemical oxidation process and an electrochemical approach. Synthesized nanocomposite thin films were characterized by using cyclic voltammetry, UV–vis. absorption spectroscopy, powder X-ray diffraction, and scanning tunneling microscopy techniques. Electrocatalytical properties of prepared poly(methylene blue)/graphene nanocomposite films were compared toward electrochemical oxidation of nitrite. Under optimized conditions, electrocatalytical effect of nanocomposite films of chemically prepared graphene through electrochemical oxidation of nitrite was better than that of electrochemically prepared graphene

  4. Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

    International Nuclear Information System (INIS)

    Li Haixia; Cheng Fangyi; Zhu Zhiqiang; Bai Hongmei; Tao Zhanliang; Chen Jun

    2011-01-01

    Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm 2 /s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm

  5. Effect of magnetic field on the growth of Be films prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Li, Kai; Luo, Bing-chi; Tan, Xiu-lan; Zhang, Ji-qiang; Wu, Wei-dong; Liu, Ying

    2014-01-01

    Highlights: • The Be films were prepared on Si (1 0 0) substrates with and without a magnetic field by thermal evaporation, respectively. • The grain diameter in the Be film transited from 300 nm to 18 nm by application of the magnetic field. • The surface roughness of the Be film decreased from 61 nm to 3 nm by application of the magnetic field. • The Be film grown with the magnetic field was easily oxidized due to its refined grains and the oxidation was gradually decreased with increasing the etching depth in the film. - Abstract: Grain refinement of beryllium deposits is studied as a significant subject for beryllium capsule in the Inertial Confinement Fusion project. The Be films were prepared on the Si (1 0 0) substrates by thermal evaporation with and without a magnetic field, respectively. The two separate groups of prepared Be films were characterized. The results showed the grain diameter in the Be film transited from 300 nm to 18 nm and the surface roughness of the Be film decreased from 61 nm to 3 nm by application of the magnetic field during the deposition process of Be coating. However, the Be film grown with the magnetic field was easily oxidized in comparison with that grown without magnetic field due to the refined grains, and the oxidation was gradually decreased with the increase of etching depth in the Be film. The reason for grain refinement of Be film was also qualitatively described

  6. Nanocomposite metal/plasma polymer films prepared by means of gas aggregation cluster source

    Energy Technology Data Exchange (ETDEWEB)

    Polonskyi, O.; Solar, P.; Kylian, O.; Drabik, M.; Artemenko, A.; Kousal, J.; Hanus, J.; Pesicka, J.; Matolinova, I. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, 18000 Prague 8 (Czech Republic); Kolibalova, E. [Tescan, Libusina trida 21, 632 00 Brno (Czech Republic); Slavinska, D. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, 18000 Prague 8 (Czech Republic); Biederman, H., E-mail: bieder@kmf.troja.mff.cuni.cz [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, 18000 Prague 8 (Czech Republic)

    2012-04-02

    Nanocomposite metal/plasma polymer films have been prepared by simultaneous plasma polymerization using a mixture of Ar/n-hexane and metal cluster beams. A simple compact cluster gas aggregation source is described and characterized with emphasis on the determination of the amount of charged clusters and their size distribution. It is shown that the fraction of neutral, positively and negatively charged nanoclusters leaving the gas aggregation source is largely influenced by used operational conditions. In addition, it is demonstrated that a large portion of Ag clusters is positively charged, especially when higher currents are used for their production. Deposition of nanocomposite Ag/C:H plasma polymer films is described in detail by means of cluster gas aggregation source. Basic characterization of the films is performed using transmission electron microscopy, ultraviolet-visible and Fourier-transform infrared spectroscopies. It is shown that the morphology, structure and optical properties of such prepared nanocomposites differ significantly from the ones fabricated by means of magnetron sputtering of Ag target in Ar/n-hexane mixture.

  7. Preparation and characterizations of polyaniline (PANI)/ZnO nanocomposites film using solution casting method

    International Nuclear Information System (INIS)

    Ahmed, Faheem; Kumar, Shalendra; Arshi, Nishat; Anwar, M.S.; Su-Yeon, Lee; Kil, Gyung-Suk; Park, Dae-Won; Koo, Bon Heun; Lee, Chan Gyu

    2011-01-01

    Polyaniline (PANI)-ZnO nanoparticles composites film has been successfully fabricated by solution casting technique on glass substrate in which ZnO nanopowder was prepared via auto combustion method and used as inorganic materials. The as-grown nanocomposites film has been characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Transmission electron microscopy (TEM) and Atomic Force Microscopy (AFM) for their structural and morphological characterizations. X-ray diffraction studies of as-grown film showed the reflection of ZnO nanoparticles along with a broad peak of PANI. The AFM study of the film shows the incorporation of ZnO nanoparticles into the polymer matrix which was further supported by roughness measurement. TEM images showed that the size of ZnO nanoparticles in the nanocomposites increase from ∼ 35 nm to ∼ 45 nm, indicating the interaction of nanoparticles with PANI molecular chains. FTIR spectra showed a band at 501 cm -1 due to ZnO nanoparticles while the hydrogen bonding between the amine group of PANI and ZnO nanoparticles had been confirmed from the presence of the absorption band at 1148 cm -1 .

  8. Nanostructured MgTiO{sub 3} thick films obtained by electrophoretic deposition from nanopowders prepared by solar PVD

    Energy Technology Data Exchange (ETDEWEB)

    Apostol, Irina [S.C. IPEE Amiral Trading Impex S.A., 115300 Curtea de Arges (Romania); Mahajan, Amit [Department of Materials and Ceramics Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Monty, Claude J.A. [CNRS-PROMES Laboratory, 66120 Font Romeu Odeillo (France); Venkata Saravanan, K., E-mail: venketvs@cutn.ac.in [Department of Materials and Ceramics Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, Thiruvarur 61010 (India)

    2015-12-15

    Highlights: • Obtaining nano-crystalline magnesium titanium oxide powders by solar physical vapor deposition (SPVD) process. And using these nano-powders to obtain thick films on conducting substrates by electrophoretic deposition (EPD). • SPVD is a core innovative, original and environmentally friendly process to prepare nano-materials in a powder form. • Sintered thick films exhibited dielectric constant, ε{sub r} ∼18.3 and dielectric loss, tan δ ∼0.0012 at 1 MHz, which is comparable to the values reported earlier. • New contributions to the pool of information on the preparation of nano-structured MgTiO{sub 3} thick films at low temperatures. • A considerable decrease in synthesis temperature of pure MgTiO{sub 3} thick film was observed by the combination of SPVD and EPD. - Abstract: A novel combination of solar physical vapor deposition (SPVD) and electrophoretic deposition (EPD) that was developed to grow MgTiO{sub 3} nanostructured thick films is presented. Obtaining nanostructured MgTiO{sub 3} thick films, which can replace bulk ceramic components, a major trend in electronic industry, is the main objective of this work. The advantage of SPVD is direct synthesis of nanopowders, while EPD is simple, fast and inexpensive technique for preparing thick films. SPVD technique was developed at CNRS-PROMES Laboratory, Odeillo-Font Romeu, France, while the EPD was performed at University of Aveiro – DeMAC/CICECO, Portugal. The nanopowders with an average crystallite size of about 30 nm prepared by SPVD were dispersed in 50 ml of acetone in basic media with addition of triethanolamine. The obtained well-dispersed and stable suspensions were used for carrying out EPD on 25 μm thick platinum foils. After deposition, films with thickness of about 22–25 μm were sintered in air for 15 min at 800, 900 and 1000 °C. The structural and microstructural characterization of the sintered thick films was carried out using XRD and SEM, respectively. The

  9. Effect of temperature on optical and structural properties of indium selenide thin films

    International Nuclear Information System (INIS)

    Asabe, M.R.; Manikshete, A.H.; Hankare, P.P.

    2013-01-01

    In 2 Se 3 thin film have been prepared for the first time by using a relatively simple chemical bath deposition technique at room temperature using indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium. Various preparative conditions of thin film deposition are outlined. The films deposited at optimum preparative parameters are annealed at different temperatures. The as-deposited films those annealed at 100℃ and have been characterized by X-ray diffraction (XRD), Energy Dispersive Analysis by X-ray (EDAX), Optical absorption and scanning electron microscopy (SEM). The as grown films were found to be transparent, uniform, well adherent and brown in color. The XRD analysis of the as-deposited and annealed films shows the presence of polycrystalline nature in tetragonal crystal structure. EDAX study reveals that as-deposited films are almost stoichiometric while optical absorption study shows the presence of band gap for direct while optical absorption study shows the presence of band gap for direct transition at 2.35 and 2.10 eV respectively, for the as-deposited and annealed films. SEM study indicated the presence of uniformly distributed grains over the surface of substrate for the as-deposited as well as annealed film. (author)

  10. Spray pyrolysed Ru:TiO2 thin film electrodes prepared for electrochemical supercapacitor

    Science.gov (United States)

    Fugare, B. Y.; Thakur, A. V.; Kore, R. M.; Lokhande, B. J.

    2018-04-01

    Ru doped TiO2 thin films are prepared by using 0.06 M aqueous solution of potassium titanium oxalate (pto), and 0.005 M aqueous solution of ruthenium tri chloride (RuCl3) precursors. The deposition was carried on stainless steel (SS) by using well known ultrasonic spray pyrolysis technique (USPT) at 723° K by maintaining the spray rate 12 cc/min and compressed air flow rate 10 Lmin-1. Prepared Ru:TiO2 thin films were characterized by structurally, morphologically and electrochemically. Deposited RuO2 shows amorphous structure and TiO2 shows tetragonal crystal structure with rutile as prominent phase at very low decomposition temperature. SEM micrographs of RuO2 exhibits porous, interconnected, spherical grains type morphology and TiO2 shows porous, nanorods and nanoplates like morphology and also Ru doped TiO2 shows porous, spherical, granular and nanorods type morphology. The electrochemical cyclic voltammetery shows mixed capacitive behavior. The achieved highest value of specific capacitance 2692 F/g was Ru doped TiO2 electrode in 0.5 M H2SO4.

  11. Ice films follow structure zone model morphologies

    International Nuclear Information System (INIS)

    Cartwright, Julyan H.E.; Escribano, Bruno; Sainz-Diaz, C. Ignacio

    2010-01-01

    Ice films deposited at temperatures of 6-220 K and at low pressures in situ in a cryo-environmental scanning electron microscope show pronounced morphologies at the mesoscale consistent with the structure zone model of film growth. Water vapour was injected directly inside the chamber at ambient pressures ranging from 10 -4 Pa to 10 2 Pa. Several different substrates were used to exclude the influence of their morphology on the grown films. At the lowest temperatures the ice, which under these conditions is amorphous on the molecular scale, shows the mesoscale morphologies typical of the low-temperature zones of the structure zone model (SZM), including cauliflower, transition, spongelike and matchstick morphologies. Our experiments confirm that the SZM is independent of the chemical nature of the adsorbate, although the intermolecular interactions in water (hydrogen bonds) are different to those in ceramics or metals. At higher temperatures, on the other hand, where the ice is hexagonal crystalline on the molecular scale, it displays a complex palmlike morphology on the mesoscale.

  12. Ice films follow structure zone model morphologies

    Energy Technology Data Exchange (ETDEWEB)

    Cartwright, Julyan H.E. [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain); Escribano, Bruno, E-mail: bruno.escribano.salazar@gmail.co [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain); Sainz-Diaz, C. Ignacio [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain)

    2010-04-02

    Ice films deposited at temperatures of 6-220 K and at low pressures in situ in a cryo-environmental scanning electron microscope show pronounced morphologies at the mesoscale consistent with the structure zone model of film growth. Water vapour was injected directly inside the chamber at ambient pressures ranging from 10{sup -4} Pa to 10{sup 2} Pa. Several different substrates were used to exclude the influence of their morphology on the grown films. At the lowest temperatures the ice, which under these conditions is amorphous on the molecular scale, shows the mesoscale morphologies typical of the low-temperature zones of the structure zone model (SZM), including cauliflower, transition, spongelike and matchstick morphologies. Our experiments confirm that the SZM is independent of the chemical nature of the adsorbate, although the intermolecular interactions in water (hydrogen bonds) are different to those in ceramics or metals. At higher temperatures, on the other hand, where the ice is hexagonal crystalline on the molecular scale, it displays a complex palmlike morphology on the mesoscale.

  13. Preparation and properties of carbohydrate-based composite films incorporated with CuO nanoparticles.

    Science.gov (United States)

    Shankar, Shiv; Wang, Long-Feng; Rhim, Jong-Whan

    2017-08-01

    The present study aimed to develop the carbohydrate biopolymer based antimicrobial films for food packaging application. The nanocomposite films of various biopolymers and copper oxide nanoparticles (CuONPs) were prepared by solvent casting method. The nanocomposite films were characterized using SEM, FTIR, XRD, and UV-vis spectroscopy. The thermal stability, UV barrier, water vapor permeability, and antibacterial activity of the composite films were also evaluated. The surface morphology of the films was dependent on the types of polymers used. The XRD revealed the crystallinity of CuONPs in the composite films. The addition of CuONPs increased the thickness, tensile strength, UV barrier property, relative humidity, and water vapor barrier property. The CuONPs incorporated composite films exhibited strong antibacterial activity against Escherichia coli and Listeria monocytogenes. The developed composite films could be used as a UV-light barrier antibacterial films for active food packaging. Copyright © 2017 Elsevier Ltd. All rights reserved.

  14. Composite films based on biorelated agro-industrial waste and poly(vinyl alcohol). Preparation and mechanical properties characterization.

    Science.gov (United States)

    Chiellini, E; Cinelli, P; Imam, S H; Mao, L

    2001-01-01

    As a part of an ongoing project on the production of composite materials based on poly(vinyl alcohol) (PVA) and polymeric materials from renewable resources, the present paper reports on the incorporation of agricultural waste materials as organic fillers in a film matrix based on PVA as continuous phase. In this study lignocellulosic fibers byproducts, derived from sugar cane (SC) and apple (AP) and orange (OR) fruit juice extraction, were cast from PVA aqueous solutions. The effect of fiber type and composition on the relative properties of cast films was evaluated and compared. OR resulted to be suitable for blending in higher amounts by weight than SC and AP. Glycerol and urea were added as plasticizing agents and were observed to be effective in giving flexible films. Additionally, cornstarch was added to further increase the composition of polymers from renewable resources in cost-effective and ecoefficient composite film formulations. The prepared films resulted sensitive to moisture and water. To reduce water sensitivity, hexamethoxymethylmelamine (HMMM) was tested as a cross-linking agent for the present composite formulations. Cross-linked films exhibited significant improvement in water-resistance that can be taken as a tuneable structural feature for customized applications. The mechanical properties of the prepared composite films (elongation at break, tensile strength, Young modulus) were found to be dependent upon the nature and content of the filler and on environmental conditions.

  15. Preparation of TiO2 thin films from autoclaved sol containing needle-like anatase crystals

    International Nuclear Information System (INIS)

    Ge Lei; Xu Mingxia; Fang Haibo; Sun Ming

    2006-01-01

    A new inorganic sol-gel method was introduced in this paper to prepare TiO 2 thin films. The autoclaved sol with needle-like anatase crystals was synthesized using titanyl sulfate (TiOSO 4 ) and peroxide (H 2 O 2 ) as starting materials. The transparent anatase TiO 2 thin films were prepared on glass slides from the autoclaved sol by sol-gel dip-coating method. A wide range of techniques such as Fourier transform infrared transmission spectra (FT-IR), X-ray diffraction (XRD), thermogravimetry-differential thermal analysis (TG-DTA), scanning electron microscopes, X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectrum were applied to characterize the autoclaved sol and TiO 2 thin films. The results indicate that the autoclaved sol is flavescent, semitransparent and stable at room temperature. The anatase crystals of TiO 2 films connect together to form net-like structure after calcined and the films become uniform with increasing heating temperature. The surface of the TiO 2 films contain not only Ti and O elements, but also a small amount of N and Na elements diffused from substrates during heat treatment. The TiO 2 films are transparent and their maximal light transmittances exceed 80% under visible light region

  16. SBA-15 mesoporous silica free-standing thin films containing copper ions bounded via propyl phosphonate units - preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Laskowski, Lukasz, E-mail: lukasz.laskowski@kik.pcz.pl [Czestochowa University of Technology, Institute of Computational Intelligence, Unit of Microelectronics and Nanotechnology, Al. Armii Krajowej 36, 42–201 Czestochowa (Poland); Laskowska, Magdalena, E-mail: magdalena.laskowska@onet.pl [H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, 31-342 Krakow, ul. Radzikowskiego 152 (Poland); Jelonkiewicz, Jerzy, E-mail: jerzy.jelonkiewicz@kik.pcz.pl [Czestochowa University of Technology, Institute of Computational Intelligence, Unit of Microelectronics and Nanotechnology, Al. Armii Krajowej 36, 42–201 Czestochowa (Poland); Dulski, Mateusz, E-mail: mateusz.dulski@us.edu.pl [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Materials Science, Silesian Center for Education and Interdisciplinary Research, ul. 75 Pułku Piechoty 1A, 41–500 Chorzów (Poland); Wojtyniak, Marcin, E-mail: marcin.wojtyniak@us.edu.pl [University of Silesia, Institute of Physics, Silesian Center for Education and Interdisciplinary Research, ul. 75 Pułku Piechoty 1A, 41–500 Chorzów (Poland); Fitta, Magdalena, E-mail: magdalena.fitta@ifj.edu.pl [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, 31–342 Krakow, ul. Radzikowskiego 152 (Poland); Balanda, Maria, E-mail: Maria.Balanda@ifj.edu.pl [H. Niewodniczański Institute of Nuclear Physics, Polish Academy of Sciences, 31–342 Krakow, ul. Radzikowskiego 152 (Poland)

    2016-09-15

    The SBA-15 silica thin films containing copper ions anchored inside channels via propyl phosphonate groups are investigated. Such materials were prepared in the form of thin films, with hexagonally arranged pores, laying rectilinear to the substrate surface. However, in the case of our thin films, their free standing form allowed for additional research possibilities, that are not obtainable for typical thin films on a substrate. The structural properties of the samples were investigated by X-ray reflectometry, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The molecular structure was examined by Raman spectroscopy supported by numerical simulations. Magnetic measurements (SQUID magnetometry and EPR spectroscopy) showed weak antiferromagnetic interactions between active units inside silica channels. Consequently, the pores arrangement was determined and the process of copper ions anchoring by propyl phosphonate groups was verified in unambiguous way. Moreover, the type of interactions between magnetic atoms was determined. - Highlights: • Functionalized free-standing SBA-15 thin films were synthesized for a first time. • Thin films synthesis procedure was described in details. • Structural properties of the films were thoroughly investigated and presented. • Magnetic properties of the novel material was investigated and presented.

  17. Characterization of PE-g-HEMA films prepared by gamma irradiation through nuclear microprobe techniques

    International Nuclear Information System (INIS)

    Ferreira, L.M.; Rodrigues, P.A.; Falcao, A.N.; Leal, J.P.

    2011-01-01

    Complete text of publication follows. The functional success of a copolymer as biomaterial depends fundamentally on their mechanical properties (stemming from the material matrix) and on the characteristics of its surface. For biomedical applications, among all the other important properties, the biocompatibility of the surface acquires extreme importance and can dictate its rejection. One of the issues regarding biocompatibility is cytotoxicity which strongly depends on the contamination level at surface. Ion beam analysis techniques associated to Nuclear Microprobe (PIXE, RBS and STIM) allows a rigorous and precise analysis of the concentration (ppm) and distribution of elements contamination, and may also provide information on its near-surface structure. In this work PE-g-HEMA films with different grafting yields were prepared by mutual gamma irradiation at a 60 Co source and were analyzed through nuclear microprobe. Data collected allowed the qualitative and quantitative evaluation of contaminants distribution observed in the different samples as well as the clarification of some processes occurred during the copolymerization reaction. Qualitative analysis showed a random and no homogeneous distribution of the contaminant elements, independent of the grafting degree, suggesting the existence of several sources of contamination at different stages of their preparation. Results also suggest that this 'phased' contamination occurs simultaneously with mechanisms of agglomeration/entrapment of impurities during the gamma induced copolymerization reaction. Moreover, quantitative data showed that all contaminants found in the copolymeric films are natural contaminants of their reagents of preparation, although at concentrations without toxicological hazard, which points to a low cytotoxic potential. The combined analysis of these data with data from SEM and AFM allowed a better understanding of the surface structure and other properties already observed in these

  18. Hydroxyapatite coatings on titanium dioxide thin films prepared by pulsed laser deposition method

    International Nuclear Information System (INIS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Nakashima, Shouta; Kawazoe, Syuichi; Toma, Tetsuya

    2006-01-01

    Hydroxyapatite (HAp) coated on titanium dioxide (TiO 2 ) thin films has been developed to supplement the defects of both TiO 2 and HAp. Thin films have been prepared by pulsed laser deposition (PLD) method using HAp and HAp(10%) + TiO 2 targets. X-ray diffraction (XRD) shows that there are many small peaks of Ca 1 0(PO 4 ) 6 (OH) 2 crystal, and no impurity other than HAp is detected in HAp films prepared using pure HAp target. The composition ratio of the film was analyzed by X-ray photoelectron spectroscopy (XPS). HAp coatings on TiO 2 thin films have been prepared using HAp(10%) + TiO 2 targets. XRD and XPS measurements suggest that crystalline HAp + TiO 2 thin films are obtained by the PLD method using HAp(10%) + TiO 2 target

  19. Thin film structures and phase stability

    International Nuclear Information System (INIS)

    Clemens, B.M.; Johnson, W.L.

    1990-01-01

    This was a two day symposium, with invited and contributed papers as well as an evening poster session. The first day concentrated on solid state reactions with invited talks by Lindsay Greer from the University of Cambridge, King Tu from IBM Yorktown Heights, and Carl Thompson from MIT. Professor Greer observed that the diffusion of Zr is 10 6 times slower than that of Ni in amorphous NiZr, confirming that Ni is the mobile species in solid state amorphization. King Tu explained the formation of metastable phases in this film diffusion couples by the concept of maximum rate of free energy change. Carl Thompson discussed the formation of amorphous phases in metal silicon systems, and discussed a two stage nucleation and growth process. The contributed papers also generated discussion on topics such as phase segregation, amorphous silicide formation, room temperature oxidation of silicon, and nucleation during ion beam irradiation. There was a lively poster session on Monday evening with papers on a wide variety of topics covering the general area of thin film science. The second day had sessions Epitaxy and Multilayer Structure I and II, with the morning focussing on epitaxial and heteroepitaxial growth of thin films. Robin Farrow of IBM Almaden led off with an invited talk where he reported on some remarkable success he and his co-workers have had in growing single crystal epitaxial thin films and superlattices of silver, iron, cobalt and platinum on GaAs. This was followed by several talks on epitaxial growth and characterization. The afternoon focused on interfaces and structure of multilayered materials. A session on possible stress origins of the supermodulus effect was highlighted by lively interaction from the audience. Most of the papers presented at the symposium are presented in this book

  20. Preparation of nanostructured ZrO2 thin films by using spray pyrolysis technique for gas sensing application

    International Nuclear Information System (INIS)

    Deshmukh, S.B.; Bari, R.H.; Jain, G.H.

    2013-01-01

    In present work the nano-structured pure ZrO 2 thin films were prepared using spray pyrolysis techniques. The aqueous solution of ZrCl 4 , was used as a precursor with flow rate controlled 5 mI/min. The films were synthesized on glass substrate between temperature 250-400℃ and subjected to different analytical characterization like SEM, XRD, TEM, FTIR, UV, TGA-DTA/DSC. The gas sensing performances of various gases were tested in different operating temperature range. The sensitivity, selectivity, response and recovery time for H 2 S gas was discussed. Also nano structured grain size discussed. (author)

  1. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S; Ridge, Claron J.; Rö tzer, Marian David; Zwaschka, Gregor; Braun, Thomas; D'Elia, Valerio; Basset, Jean-Marie; Schweinberger, Florian Frank; Gü nther, Sebastian; Heiz, Ueli

    2015-01-01

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly

  2. Influence of Philosamia ricini silk fibroin components on morphology, secondary structure and thermal properties of chitosan biopolymer film.

    Science.gov (United States)

    Prasong, S; Nuanchai, K; Wilaiwan, S

    2009-09-15

    This study aimed to prepare Eri (Philosamia ricini) Silk Fibroin (SF)/chitosan (CS) blend films by a solvent evaporation method and to compare the blend films with both native SF and CS films. Influence of SF ratios on the morphology, secondary structure and thermal decomposition of the CS blend films were investigated. The native SF and CS films were uniform and homogeneous without phase separation. For the blend films, the uniform can be found less than 60% of SF composition. All of SF/CS blend films showed both SF and CS characteristics. FT-IR results showed that the blend films composed of both random coil and beta-sheet with predominant of beta-sheet form. Interaction of intermolecular between SF and CS have occurred which were measured by thermogravimetric thermograms. Increasing of SF contents was leading to the increase of beta-sheet structures which were enhanced the thermal stability of the CS blend films.

  3. Preparation of anatase TiO2 thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Miyata, Toshihiro; Tsukada, Satoshi; Minami, Tadatsugu

    2006-01-01

    Anatase titanium dioxide (TiO 2 ) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO 2 pellets as the source material. Highly transparent TiO 2 thin films prepared at substrate temperatures from room temperature to 400 deg. C exhibited photocatalytic activity, regardless whether oxygen (O 2 ) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO 2 thin films prepared at 300 deg. C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO 2 thin film with a resistivity of 2.6 x 10 -1 Ω cm was prepared at a substrate temperature of 400 deg. C without the introduction of O 2 gas

  4. Optical and structural properties of thin films of ZnO at elevated temperature

    International Nuclear Information System (INIS)

    Kayani, Zohra N.; Afzal, Tosif; Riaz, Saira; Naseem, Shahzad

    2014-01-01

    Highlights: • Thin films of ZnO are prepared on glass substrates using dip-coating. • The X-ray diffraction showed that films are crystalline. • Optical measurements show that the film possesses high transmittance in visible region. • The transmission decreased with increased withdrawal speed. • The films has direct band gap in range 3.78-3.48 eV. - Abstract: Zinc oxide (ZnO) thin films were prepared on glass substrate by sol–gel dip-coating method. The paper presents the properties of zinc oxide thin films deposited on soda-lime-glass substrate via dip-coating technique, using zinc acetate dehydrate and ethanol as raw materials. The effect of withdrawal speed on the crystalline structure, surface morphology and optical properties of the thin films has been investigated using XRD, SEM and UV–Vis spectrophotometer. X-ray diffraction study shows that all the films have hexagonal wurtzite structure with preferred orientation in (0 0 2) direction and transmission spectra showed highly transparent films with band gap ranging from 3.78 to 3.48 eV

  5. Protein adsorption resistance of PVP-modified polyurethane film prepared by surface-initiated atom transfer radical polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Huihui; Qian, Bin; Zhang, Wei [Shanghai Key Laboratory of Functional Materials Chemistry and Research Center of Analysis and Test, East China University of Science and Technology, Shanghai 200237 (China); Lan, Minbo, E-mail: minbolan@ecust.edu.cn [Shanghai Key Laboratory of Functional Materials Chemistry and Research Center of Analysis and Test, East China University of Science and Technology, Shanghai 200237 (China); State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China)

    2016-02-15

    Highlights: • Antifouling PVP brushes were successfully grafted on PU films by SI-ATRP. • The effect of polymerization time on surface property and topography was studied. • Hydrophilicity and protein fouling resistance of PVP–PU films were greatly promoted. • Competitive adsorption of three proteins on PVP–PU films was evaluated. - Abstract: An anti-fouling surface of polyurethane (PU) film grafted with Poly(N-vinylpyrrolidone) (PVP) was prepared through surface-initiated atom transfer radical polymerization (SI-ATRP). And the polymerization time was investigated to obtain PU films with PVP brushes of different lengths. The surface properties and protein adsorption of modified PU films were evaluated. The results showed that the hydrophilicity of PU–PVP films were improved with the increase of polymerization time, which was not positive correlation with the surface roughness due to the brush structure. Additionally, the protein resistance performance was promoted when prolonging the polymerization time. The best antifouling PU–PVP (6.0 h) film reduced the adsoption level of bovine serum albumin (BSA), lysozyme (LYS), and brovin serum fibrinogen (BFG) by 93.4%, 68.3%, 85.6%, respectively, compared to the unmodified PU film. The competitive adsorption of three proteins indicated that LYS preferentially adsorbed on the modified PU film, while BFG had the lowest adsorption selectivity. And the amount of BFG on PU–PVP (6.0 h) film reduced greatly to 0.08 μg/cm{sup 2}, which was almost one-tenth of its adsorption from the single-protein system. Presented results suggested that both hydrophilicity and surface roughness might be the important factors in all cases of protein adsorption, and the competitive or selective adsorption might be related to the size of the proteins, especially on the non-charged films.

  6. Protein adsorption resistance of PVP-modified polyurethane film prepared by surface-initiated atom transfer radical polymerization

    International Nuclear Information System (INIS)

    Yuan, Huihui; Qian, Bin; Zhang, Wei; Lan, Minbo

    2016-01-01

    Highlights: • Antifouling PVP brushes were successfully grafted on PU films by SI-ATRP. • The effect of polymerization time on surface property and topography was studied. • Hydrophilicity and protein fouling resistance of PVP–PU films were greatly promoted. • Competitive adsorption of three proteins on PVP–PU films was evaluated. - Abstract: An anti-fouling surface of polyurethane (PU) film grafted with Poly(N-vinylpyrrolidone) (PVP) was prepared through surface-initiated atom transfer radical polymerization (SI-ATRP). And the polymerization time was investigated to obtain PU films with PVP brushes of different lengths. The surface properties and protein adsorption of modified PU films were evaluated. The results showed that the hydrophilicity of PU–PVP films were improved with the increase of polymerization time, which was not positive correlation with the surface roughness due to the brush structure. Additionally, the protein resistance performance was promoted when prolonging the polymerization time. The best antifouling PU–PVP (6.0 h) film reduced the adsoption level of bovine serum albumin (BSA), lysozyme (LYS), and brovin serum fibrinogen (BFG) by 93.4%, 68.3%, 85.6%, respectively, compared to the unmodified PU film. The competitive adsorption of three proteins indicated that LYS preferentially adsorbed on the modified PU film, while BFG had the lowest adsorption selectivity. And the amount of BFG on PU–PVP (6.0 h) film reduced greatly to 0.08 μg/cm"2, which was almost one-tenth of its adsorption from the single-protein system. Presented results suggested that both hydrophilicity and surface roughness might be the important factors in all cases of protein adsorption, and the competitive or selective adsorption might be related to the size of the proteins, especially on the non-charged films.

  7. Josephson edge junctions on YBa2Cu3O7 thin films prepared with Br-ethanol etching

    International Nuclear Information System (INIS)

    Faley, M.I.; Poppe, U.; Daehne, U.; Goncharov, Yu.G.; Klein, N.; Urban, K.; Soltner, H.

    1993-01-01

    To produce damage-free edges is one of the main problems in the preparation of the Josephson edge-type junctions and interconnects in multilayer structures including high temperature superconductors. The commonly used ion beam etching has the disadvantages of the risk of contamination by redeposited material and structural damage to the surface of the edge. Vasquez et al and Gurvitch et al introduced a nonaqueous Br-ethanol etching for the preparation of clean surfaces of YBa 2 Cu 3 O 7 single crystals and thin films. We have developed a procedure of deep-UV-photolithography combined with nonaqueous Br-ethanol etching for the preparation of the Josephson edge-type junctions. Here we present the improvement of this method and report further results on the study of the electron transport properties of Josephson junctions with the edges of YBa 2 Cu 3 O 7 thin films produced by this technique. (orig.)

  8. Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

    International Nuclear Information System (INIS)

    Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

    2008-01-01

    Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

  9. Resistivity behavior of optimized PbTiO3 thin films prepared by spin coating method

    Science.gov (United States)

    Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

    2018-05-01

    Th is study presents the resistivity behavior of PbTiO3 thin films which were prepared towards metal-insulator-metal capacitor device fabrication. The PbTiO3 thin films were prepared through sol-gel spin coating method that involved various deposition parameters that is (1) different molar concentration of PbTiO3 solutions, (2) various additional PbAc-content in PbTiO3 solutions, and (3) various annealing temperature on PbTiO3 thin films. Hence, an electrical measurement of current versus voltage was done to determine the resistivity behavior of PbTiO3 thin films.

  10. A methodology for the preparation of nanoporous polyimide films with low dielectric constants

    International Nuclear Information System (INIS)

    Jiang Lizhong; Liu Jiugui; Wu Dezhen; Li Hangquan; Jin Riguang

    2006-01-01

    A method to generate nanoporous polyimide films with low dielectric constants was proposed. The preparation consisted of two steps. Firstly, a polyimide/silica hybrid film was prepared via sol-gel process. Secondly, the hybrid film was treated with hydrofluoric acid to remove the dispersed silica particles, leaving pores with diameters between 20 and 120 nm, depending on the size of silica particles. Both hybrid and porous films were subjected to a variety of characterizations including transmission electron microscopy observation, dielectric constant measurement and tensile strength measurement

  11. C-Ni-Pd and CNT-Ni-Pd film's molecular and crystalline structure investigations by FTIR spectroscopy and XRD diffraction

    Science.gov (United States)

    Stepińska, Izabela; Czerwosz, ElŻbieta; Diduszko, Ryszard; Kozłowski, Mirosław; Wronka, Halina

    2017-08-01

    In this work molecular and crystalline structure of new type of nanocomposite films were investigated. These films compose of CNT decorated with palladium nanograins. They were prepared on a base of C-Ni films modified in CVD process. C-Ni nanocomposite films were obtained by PVD process and their modification by CVD leads to a growth of CNT film. CNTs-Ni or C-Ni films were treated with additional PVD process with palladium. Nickel and palladium acetate and fulleren C60 are precursors of films in PVD process. FTIR spectroscopy was used to studied the molecular structure of film in every stage of preparation . The crystalline structure of these films was studied by X-ray diffraction. SEM (scanning electron microscopy) was applied to investigate film's surface topography.

  12. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-01-01

    Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

  13. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    International Nuclear Information System (INIS)

    Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

    2014-01-01

    Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

  14. Fluctuations and structure of amphiphilic films; Fluctuations et structure de films d`amphiphiles

    Energy Technology Data Exchange (ETDEWEB)

    Gourier, CH

    1996-07-01

    This thesis is divided in three parts.The first part exposes in a theoretical point of view, how the fluctuations spectrum of an amphiphilic film is governed by its properties and its bidimensional characteristics.The measurements of fluctuations spectra of an interface are accessible with the measurement of intensity that interface diffuses out of the specular angle, we present in the second chapter the principles of the X rays diffusion by a real interface and see how the diffuse diffusion experiments allow to determine the fluctuations spectrum of an amphiphilic film. The second part is devoted to the different experimental techniques that have allowed to realize the study of fluctuation as well as the structural study.The third part is devoted to experimental results concerning the measurements of fluctuations spectra and to the study of the structure of amphiphilic films. We show that it is possible by using an intense source of X rays (ESRF: European Synchrotron Radiation Facility) to measure the water and amphiphilic films fluctuations spectra until molecular scales. The last chapter is devoted to the structural study and film fluctuations made of di-acetylenic molecules. (N.C.)

  15. Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

    International Nuclear Information System (INIS)

    Inagaki, N.

    2003-01-01

    SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

  16. Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

    International Nuclear Information System (INIS)

    Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa; Kim, Jong Il

    2010-01-01

    To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 μm) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film

  17. Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa [Korea Atomic Energy Research Institute, Jeongeup (Korea, Republic of); Kim, Jong Il [Chonbuk National University, Jeonju (Korea, Republic of)

    2010-06-15

    To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 {mu}m) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film.

  18. Structural and optical properties of Sb65Se35-xGex thin films

    Science.gov (United States)

    Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

    2011-07-01

    Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.

  19. Structural, dielectric and ferroelectric characterization of PZT thin films

    Directory of Open Access Journals (Sweden)

    Araújo E.B.

    1999-01-01

    Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

  20. Absorbing materials of thin film for photovoltaic structures prepared by the process of pyrolytic spraying; Materiales absorbedores en pelicula delgada para estructuras fotovoltaicas preparados por el proceso de rocio pirolitico

    Energy Technology Data Exchange (ETDEWEB)

    Calixto Rodriguez, Manuela

    2006-11-15

    In this thesis work thin semiconducting films were grown with the following compounds: In{sub 2}S{sub 3}, Ag{sub 2}S, AgInS{sub 2}, SnS{sub 2} and SnS with the pyrolytic spray technique. The structural, optical and electrical proposals of these films were analyzed to determine the set of deposit parameters in which are obtained the physical properties for the applications of the same in photovoltaic structures. It was found that the molar relation in solution of the departing compounds and the deposit temperature are the same dominant parameters in the process of growing the films. For the deposit of thin films of Indio acetate were used and N, N-dimetil tiourea as precursory compounds of In and S, respectively. Polycrystalline films were obtained from the compound In{sub 2}S{sub 3} using underlying temperatures, Ts, between 400 and 450 degrees Celsius, and Indio acetate solutions and N, N-dimetil tiourea with molar relations (In:S) of 1:8 and 1:1. The energy breach, Eg, of these films varies from 2.04 to 2.67 eV, and the value of the conductivity in the darkness, D varies from 10-7 to 1(cm)-1 in function of the molar relation in solution. It was found that the deposited films using a molar relation of In:S=1:8 are of intrinsic nature independently of Ts, while the ones deposited using a molar relations of In:S=1:1 and Ts 400 degrees Celsius posses type-n conductivity. Using the molar relation of I:S=1:1 and Ts=500 degrees Celsius the compound polycrystalline of In{sub 2}O{sub 3} is obtained whose optical and electrical properties are Eg {approx} 3 eV and D=11 (cm)-1, with electrical conductivity type-n. The deposited films using a molar relation of In:S=1:1 and Ts=450 degrees Celsius are the ones that keep the appropriate characteristics for their use as type-n material in photovoltaic structures (Eg=2eV and D=1?-1 com-1). [Spanish] En este trabajo de tesis se crecieron peliculas delgadas semiconductoras de los compuestos: In{sub 2}S{sub 3}, Ag{sub 2}S, Ag

  1. Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2009-05-01

    ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

  2. Challenges of sample preparation for cross sectional EBSD analysis of electrodeposited nickel films

    DEFF Research Database (Denmark)

    Alimadadi, Hossein; Pantleon, Karen

    2009-01-01

    Thorough microstructure and crystallographic orientation analysis of thin films by means of electron backscatter diffraction requires cross section preparation of the film-substrate compound. During careful preparation, changes of the rather non-stable as-deposited microstructure must be avoided....... Different procedures for sample preparation including mechanical grinding and polishing, electropolishing and focused ion beam milling have been applied to a nickel film electrodeposited on top of an amorphous Ni-P layer on a Cu-substrate. Reliable EBSD analysis of the whole cross section can be obtained...

  3. Preparation and characterization of depolymerised chitosan films and crosslinked with sodium tripolyphosphate

    International Nuclear Information System (INIS)

    Salazar, Max Carlos; Valderrama Negron, Ana

    2013-01-01

    This work has studied the preparation and characterization of chitosan films (CS) crosslinked with sodium tripolyphosphate (TPP), prepared by the solvent evaporation method. Initially we studied the depolymerization of chitosan with sodium nitrite to get different polymer molecular weights in the used polymer. For example, we obtained chitosans of 554.22kDa and 133.37kDa of molecular weight. Afterward, prepared and characterized chitosans films crosslinked with TPP, evidently the hydrogen bridge interaction with the polyanion through IR, SEM, TG; also was performed swelling studies, with the objective of identified the type of kinetic model in which enable explain said phenomenon in these films. (author)

  4. The preparation and corrosion resistance of Ce and Nd modified anodic films on aluminum

    International Nuclear Information System (INIS)

    Li Qizheng; Tang Yuming; Zuo Yu

    2010-01-01

    Rare earth element Ce and Nd modified anodic films were prepared on aluminum surface by a relatively simple method: the aluminum samples were first immersed in Ni(NO 3 ) 2 solutions containing Ce or Nd salts at 90 deg. C, then were dried and anodized. The contents of Ce or Nd in the anodic films were from 0.5% to 0.9%, and about 4-5% Ni was also introduced in the films. The modified anodic films were more compact with much smaller pores and increased hardness. In neutral, acidic and basic NaCl solutions, the rare earth modified films showed obviously improved corrosion resistance. The Ce modified films showed better corrosion resistance than Nd modified films. The cracking resistance of the films under heating was also improved.

  5. Preparation and characterization of milk protein films and their application for packaging of Cheddar cheese

    OpenAIRE

    Wagh, Y. R.; Pushpadass, Heartwin A.; Emerald, F. Magdaline Eljeeva; Nath, B. Surendra

    2013-01-01

    Casein and whey protein concentrate (WPC) films, plasticized with glycerol and sorbitol independently, were prepared by casting. The film thickness, water vapour and oxygen permeation and tensile and moisture sorption properties of the films were determined. The tensile strength (TS), tensile strain (TE) and elastic modulus (EM) of the films ranged from 0.71 to 4.58 MPa, 19.22 to 66.63 % and 2.05 to 6.93 MPa, respectively. The film properties were influenced by the type of biopolymer (casein ...

  6. Preparation and optical characterization of DNA-riboflavin thin films

    Science.gov (United States)

    Paulson, Bjorn; Shin, Inchul; Kong, Byungjoo; Sauer, Gregor; Dugasani, Sreekantha Reddy; Khazaeinezhad, Reza; Jung, Woohyun; Joo, Boram; Oh, Kyunghwan

    2016-09-01

    Thin films of DNA biopolymer thin film are fabricated by a drop casting process on glass and silicon substrates, as well as freestanding. The refractive index is measured by elliposmetry and in bulk DNA film the refractive index is shown to be increased in the 600 to 900 nm DNA transparency window by doping with riboflavin. Further analysis with FT-IR, Raman, and XRD are used to determine whether binding between riboflavin and DNA occurs.

  7. Characterization of AZO and Ag based films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Miao, Dagang; Jiang, Shouxiang; Zhao, Hongmei; Shang, Songmin; Chen, Zhuoming

    2014-01-01

    Highlights: • Highly infrared reflective AZO and Ag based films were prepared. • Ag showed better crystallization on AZO film than on glass substrate. • Infrared reflection rate was inversely proportional to the film sheet resistance. • Film with infrared reflection of 97% in FIR region was acquired. - Abstract: Ag, AZO/Ag, Ag/AZO and AZO/Ag/AZO films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. The prepared films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–visible spectrophotometer, a four-point probe system and Fourier Transform Infrared Spectroscopy. The results indicated that Ag inner layer starts forming a continuous film at the thickness of 10 nm and Ag layer presents superior crystallization on AZO substrate than that on glass substrate. The continuous Ag inner layer film provided the highest average visible transmittance of 85.4% (AZO/Ag/AZO). The lowest sheet resistance of 3.21 Ω/sq and the highest infrared reflection rate of 97% in FIR region can be obtained on AZO/Ag (15 nm)/AZO film. The high infrared reflection property of the AZO/Ag/AZO coating makes it a promising candidate for solar control films

  8. Durability of ITO-MgF2 Films for Space-Inflatable Polymer Structures

    Science.gov (United States)

    Kerslake, Thomas W.; Waters, Deborah L.; Schieman, David A.; Hambourger, Paul D.

    2003-01-01

    This paper presents results from ITO-MgF2 film durability evaluations that included tape peel, fold, thermal cycle, and AO exposure testing. Polymer coupon preparation is described as well as ITO-MgF2 film deposition equipment, procedures and film characterization. Durability testing methods are also described. The pre- and post-test condition of the films is assessed visually, microscopically, and electrically. Results show that at 500 ITO - 9 vol% MgF2 film is suitable to protect polymer surfaces, such as those used in space-inflatable structures of the PowerSphere microsatellite concept, during a 1-year Earth orbiting mission. Future plans for ground-based and orbital testing of this film are also discussed.

  9. The charge transfer structure and effective energy transfer in multiplayer assembly film

    International Nuclear Information System (INIS)

    Li Mingqiang; Jian Xigao

    2005-01-01

    Charge transfer multiplayer films have been prepared by layer-by-layer self-assembly technique. The films incorporate the rare-earth-containing polyoxometalate K 11 [Eu{PW 11 O 39 } 2 ].nH 2 O and the rich electron polyelectrolyte poly(3-viny-1-methyl-pyridine) quaternary ammonium and display a linear increase in the absorption and film thickness with the number of deposition cycles. Ultraviolet and visible absorption spectra, atomic force micrographs, small-angle X-ray reflectivity measurements, and photoluminescence spectra were used to determine the structure of films. Linear and regular multilayer growth was observed. We can observe the formation of charge transfer complex compound in multiplayer by layer-by-layer assembly method. Most importantly, the luminescence spectra show the charge transfer band in assembly films, which suggest that energy could be effectively transferred to rare earth ions in assembly multiplayer films

  10. Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Lina [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu, Shuang, E-mail: shuangliu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Falco, Charles M. [University of Arizona, College of Optical Sciences, AZ 85721 (United States)

    2016-10-30

    Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

  11. Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

    International Nuclear Information System (INIS)

    Guo, Lina; Liu, Shuang; Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong; Falco, Charles M.

    2016-01-01

    Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

  12. Preparation and switching kinetics of Pb(Zr, Ti)O sub 3 thin films deposited by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Hase, Takashi; Shiosaki, Tadashi [Kyoto Univ. (Japan). Faculty of Engineering

    1991-09-01

    Ferroelectric Pb(Zr, Ti)O{sub 3} (PZT) thin films have been prepared on Pt/Ti/SiO{sub 2}/Si and Pt/SiO{sub 2}/Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT (80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595degC on highly (111)-oriented Pt films formed on SiO{sub 2}/Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50 {mu}m{sup 2}, the switching time and the switched charge density measured were 20 ns and 10 {mu}C/cm{sup 2}, respectively. The switching time was strongly dependent on the electrode area. (author).

  13. Preparation and switching kinetics of Pb(Zr, Ti)O3 thin films deposited by reactive sputtering

    International Nuclear Information System (INIS)

    Hase, Takashi; Shiosaki, Tadashi

    1991-01-01

    Ferroelectric Pb(Zr, Ti)O 3 [PZT] thin films have been prepared on Pt/Ti/SiO 2 /Si and Pt/SiO 2 /Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT (80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595degC on highly (111)-oriented Pt films formed on SiO 2 /Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50 x 50 μm 2 , the switching time and the switched charge density measured were 20 ns and 10 μC/cm 2 , respectively. The switching time was strongly dependent on the electrode area. (author)

  14. Preparation and electrical properties of boron and boron phosphide films obtained by gas source molecular beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumashiro, Y.; Yokoyama, T.; Sakamoto, T.; Fujita, T. [Yokohama National Univ. (Japan)

    1997-10-01

    Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800{degrees}C using cracked B{sub 2}H{sub 6} (2% in H{sub 2}) at 300{degrees}C and cracked PH{sub 3} (20% in H{sub 2}) at 900{degrees}C. The substrate temperatures and gas flow rates of the reactant gases determined the film growth. The boron films with amorphous structure are p type. Increasing growth times lead to increasing mobilities and decreasing carrier concentrations. Boron phosphide film with maximum P/B ratio is obtained at a substrate temperature of 600{degrees}C, below and above which they become phosphorous deficient due to insufficient supply of phosphorus and thermal desorption of the phosphorus as P{sub 2}, respectively, but they are all n type conductors due to phosphorus vacancies.

  15. Fabrication and Characterization of CZTS Thin Films Prepared by the Sulfurization of RF-Sputtered Stacked Metal Precursors

    Science.gov (United States)

    Abusnina, Mohamed; Moutinho, Helio; Al-Jassim, Mowafak; DeHart, Clay; Matin, Mohammed

    2014-09-01

    In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the sulfurization of metal precursors deposited sequentially via radio frequency magnetron sputtering on Mo-coated soda-lime glass. The stack order of the precursors was Mo/Zn/Sn/Cu. Sputtered precursors were annealed in sulfur atmosphere with nine different conditions to study the impact of sulfurization time and substrate temperature on the structural, morphological, and optical properties of the final CZTS films. X-ray fluorescence was used to determine the elemental composition ratio of the metal precursors. Final CZTS films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS). XRD and EDS were combined to investigate the films' structure and to identify the presence of secondary phases. XRD analysis indicated an improvement in film crystallinity with an increase of the substrate temperature and annealing times. Also indicated was the minimization and/or elimination of secondary phases when the films experienced longer annealing time. EDS revealed slight Sn loss in films sulfurized at 550°C; however, an increase of the sulfurization temperature to 600°C did not confirm these results. SEM study showed that films treated with higher temperatures exhibited dense morphology, indicating the completion of the sulfurization process. The estimated absorption coefficient was on the order of 104 cm-1 for all CZTS films, and the values obtained for the optical bandgap energy of the films were between 1.33 eV and 1.52 eV.

  16. Structural, magnetic and transport properties of Co2FeAl Heusler films with varying thickness

    International Nuclear Information System (INIS)

    Wang, Xiaotian; Li, Yueqing; Du, Yin; Dai, Xuefang; Liu, Guodong; Liu, Enke; Liu, Zhongyuan; Wang, Wenhong; Wu, Guangheng

    2014-01-01

    We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co 2 FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states. - Highlights: ●Highly ordered CFA films with various thicknesses were prepared on MgO substrates. ●The magnon scattering contributions to the longitudinal resistivity in the CFA films. ●The anomalous Hall resistivity of the CFA films shows weakly temperature dependent. ●The CFA films show weak temperature dependent of tunneling spin-polarization

  17. Preparation and characterization of milk protein films and their application for packaging of Cheddar cheese.

    Science.gov (United States)

    Wagh, Y R; Pushpadass, Heartwin A; Emerald, F Magdaline Eljeeva; Nath, B Surendra

    2014-12-01

    Casein and whey protein concentrate (WPC) films, plasticized with glycerol and sorbitol independently, were prepared by casting. The film thickness, water vapour and oxygen permeation and tensile and moisture sorption properties of the films were determined. The tensile strength (TS), tensile strain (TE) and elastic modulus (EM) of the films ranged from 0.71 to 4.58 MPa, 19.22 to 66.63 % and 2.05 to 6.93 MPa, respectively. The film properties were influenced by the type of biopolymer (casein and whey protein concentrate), plasticizer and its concentration. Increasing the plasticizer concentration, increased the film thickness, TE and water vapour permeability (WVP), but decreased the TS and EM. As the concentration of plasticizer increased to the highest level, the film thickness increased from 0.168 to 0.305 mm for glycerol-plasticized films and from 0.251 to 0.326 mm for sorbitol-plasticized films. The film thickness increased because the amount of plasticizer in the film network increased and the amount of biopolymer remained same. Casein films showed superior tensile properties as compared to WPC films. The WVP of both casein and WPC films lied between 3.87 and 13.97 g.mm./(m(2).h.kPa). The moisture sorption isotherms of both films were typical of high-protein material, and were adequately described by the GAB model. The oxygen permeability of casein films was relatively lower than that of WPC films, regardless of the plasticizer used. The sensory data revealed that the organoleptic quality of Cheddar cheese was unaffected by milk-protein film packaging.

  18. Mechanics of evolving thin film structures

    Science.gov (United States)

    Liang, Jim

    In the Stranski-Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, both the surface energy and the elastic energy drive the islands to coarsen. Motivated by several related studies, we suggest that stable islands should form when a stiff ceiling is placed at a small gap above the film. We show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coarsen laterally. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. In lithographically-induced self-assembly, when a two-phase fluid confined between parallel substrates is subjected to an electric field, one phase can self-assemble into a triangular lattice of islands in another phase. We describe a theory of the stability of the island lattice. The islands select the equilibrium diameter to minimize the combined interface energy and electrostatic energy. Furthermore, we study compressed SiGe thin film islands fabricated on a glass layer, which itself lies on a silicon wafer. Upon annealing, the glass flows, and the islands relax. A small island relaxes by in-plane expansion. A large island, however, wrinkles at the center before the in-plane relaxation arrives. The wrinkles may cause significant tensile stress in the island, leading to fracture. We model the island by the von Karman plate theory and the glass layer by the Reynolds lubrication theory. Numerical simulations evolve the in-plane expansion and the wrinkles simultaneously. We determine the critical island size, below which in-plane expansion prevails over wrinkling. Finally, in devices that integrate dissimilar materials in small dimensions, crack extension in one material often accompanies inelastic deformation in another. We analyze a channel crack advancing in an elastic film under tension, while an underlayer creeps. We use a two

  19. Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

    International Nuclear Information System (INIS)

    Boyadzhiev, S; Dobrikov, G; Rassovska, M

    2008-01-01

    Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

  20. Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

    Science.gov (United States)

    Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

    2014-01-01

    Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

  1. Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Siqin; Yue, Zhenxing, E-mail: yuezhx@tsinghua.edu.cn; Zhang, Xiaozhi; Li, Longtu

    2014-01-30

    Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

  2. Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma

    Energy Technology Data Exchange (ETDEWEB)

    Feng Wenran [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Chen Guangliang [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Li Li [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Lv Guohua [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang Xianhui [College of Science, Changchun University of Science and Technology, Changchun 130022, Jilin Province (China); Niu Erwu [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Liu Chizi [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Yang Size [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

    2007-07-21

    (Ti,Ta)N films were prepared by pulsed high energy density plasma (PHEDP) from a coaxial gun in N{sub 2} gas. The coaxial gun is composed of a tantalum inner electrode and a titanium outer one. Material characteristics of the (Ti,Ta)N film were investigated by x-ray photoelectron spectroscopy and x-ray diffraction. The microstructure of the film was observed by a scanning electron microscope. The elemental composition and the interface of the film/substrate were analysed using Auger electron spectrometry. Our results suggest that the binary metal nitride film (Ti,Ta)N, can be prepared by PHEDP. It also shows that dense nanocrystalline (Ti,Ta)N film can be achieved.

  3. Optical constants and structural properties of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

    2017-01-01

    We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

  4. Optical and structural characteristics of lead sulfides thin films

    International Nuclear Information System (INIS)

    Karim Deraman; Bakar Ismail; Samsudi Sakrani; Gould, R.D.

    1992-01-01

    Tin sulfide films have been prepared by evaporation technique at 1x10 - 4 torr and at substrate temperatures between 100 to 300 0 C. The films thickness were 52 to 370 nm. From the absorption 1.47 eV and X-ray diffraction patent shows that the composition of films have changed from SnS 2 (at low temperature) to SnS (at higher temperature)

  5. Fabrication and characterization of NiO thin films prepared by SILAR method

    International Nuclear Information System (INIS)

    Akaltun, Yunus; Çayır, Tuba

    2015-01-01

    Highlights: • NiO thin films have been deposited on glass substrates using SILAR method for the first time. • The electron effective mass, refractive index were calculated by using the energy bandgap values. • The effect of film thickness on the structural, optical and electrical properties were studied. • The bandgap values of the films decreased from 3.71 to 3.67 eV. - Abstract: NiO thin films were synthesised on glass substrates at room temperature using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The effect of film thickness on the structural, morphological, optical and electrical properties of NiO thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline structure are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The energy band gap values were decreased from 3.71 to 3.67 eV depending on the film thickness. The refractive index (n), optical static (ε o ) and high frequency dielectric constant (ε ∞ ) values were calculated by using the energy band gap values as a function of the film thickness. The resistivity of the films varied between 4.1 and 802.1 Ω cm with increasing film thickness at room temperature

  6. Fabrication and characterization of NiO thin films prepared by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus [Department of Electrical and Electronic Engineering, Erzincan University, 24100 Erzincan (Turkey); Çayır, Tuba [Department of Biomedical Engineering, Erzincan University, 24100 Erzincan (Turkey)

    2015-03-15

    Highlights: • NiO thin films have been deposited on glass substrates using SILAR method for the first time. • The electron effective mass, refractive index were calculated by using the energy bandgap values. • The effect of film thickness on the structural, optical and electrical properties were studied. • The bandgap values of the films decreased from 3.71 to 3.67 eV. - Abstract: NiO thin films were synthesised on glass substrates at room temperature using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. The effect of film thickness on the structural, morphological, optical and electrical properties of NiO thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline structure are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The energy band gap values were decreased from 3.71 to 3.67 eV depending o