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Sample records for film growth morphology

  1. Growth, structure, morphology, and magnetic properties of Ni ferrite films.

    Science.gov (United States)

    Dong, Chunhui; Wang, Gaoxue; Guo, Dangwei; Jiang, Changjun; Xue, Desheng

    2013-04-27

    The morphology, structure, and magnetic properties of nickel ferrite (NiFe2O4) films fabricated by radio frequency magnetron sputtering on Si(111) substrate have been investigated as functions of film thickness. Prepared films that have not undergone post-annealing show the better spinel crystal structure with increasing growth time. Meanwhile, the size of grain also increases, which induces the change of magnetic properties: saturation magnetization increased and coercivity increased at first and then decreased. Note that the sample of 10-nm thickness is the superparamagnetic property. Transmission electron microscopy displays that the film grew with a disorder structure at initial growth, then forms spinel crystal structure as its thickness increases, which is relative to lattice matching between substrate Si and NiFe2O4.

  2. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth.

    Science.gov (United States)

    Brower, Landon J; Gentry, Lauren K; Napier, Amanda L; Anderson, Mary E

    2017-01-01

    Integration of surface-anchored metal-organic frameworks (surMOFs) within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm) initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm) covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  3. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth

    Directory of Open Access Journals (Sweden)

    Landon J. Brower

    2017-11-01

    Full Text Available Integration of surface-anchored metal-organic frameworks (surMOFs within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  4. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  5. Growth, morphology, and conductivity in semimetallic/metallic films on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Jnawali, Giriraj

    2009-06-09

    This dissertation deals with the study of epitaxial growth of semimetallic (Bi) and metallic (Ag) films on Si(001) as well as in situ electrical transport study of those films via surface manipulation. The focus of the transport measurements is to study the influence of the surface morphology or structure on the resistance of the film. In spite of the large lattice mismatch and different lattice geometry, it is possible to grow epitaxial Bi(111) films on Si(001) substrates, which are surprisingly smooth, relaxed and almost free of defects. Due to the two-fold symmetry of the substrates, the Bi(111) film is composed of crystallites rotated by 90 with respect to each other. Annealing of 6 nm film from 150 K to 450 K enables the formation of a periodic interfacial misfit dislocations, which accommodates a remaining lattice mismatch of 2.3 %. The surface/interface roughness and the bulk defect density of the film found to be extremely low, indicating the high crystalline quality of the film with atomically smooth surface and abrupt interface. Similar to the Bi films, Ag grows in a (111) orientation on Si(001) with two 90 rotated domains. The remaining strain of 2.2 % (tensile) is accommodated by the formation of an ordered network of dislocations. The Ag film exhibits atomically smooth surface. Those Bi films and Ag films were used as model systems to study the influence of the surface morphology on the electrical resistance. Surprisingly, all the Bi films (3-170 nm thicknesses) have shown an anomalous behavior of conductance with temperature and thickness. As in the case of doped semiconductor, the conductance increases exponentially from 150 K to 300 K and saturates at 350 K before finally decreasing with temperature. In situ measurements of the resistance during additional Bi deposition on the smooth Bi(111) films exhibit a square root dependent with coverage after a linear increase at very low coverage (1 % of a BL). During additional deposition of Bi, carriers are

  6. Growth and morphology of sputtered aluminum thin films on P3HT surfaces.

    Science.gov (United States)

    Kaune, Gunar; Metwalli, Ezzeldin; Meier, Robert; Körstgens, Volker; Schlage, Kai; Couet, Sebastien; Röhlsberger, Ralf; Roth, Stephan V; Müller-Buschbaum, Peter

    2011-04-01

    Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional cluster structures. A corresponding three stage growth model (surface bonding, agglomeration, and layer growth) is derived. X-ray reflectivity shows the penetration of Al atoms into the P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface. © 2011 American Chemical Society

  7. Influence of growth morphology on the Neel temperature of CrRu thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prinsloo, A.R.E., E-mail: alettap@uj.ac.z [Department of Physics, University of Johannesburg, P.O. Box 524, Auckland Park, Johannesburg 2006 (South Africa); Derrett, H.A. [Department of Physics, University of Johannesburg, P.O. Box 524, Auckland Park, Johannesburg 2006 (South Africa); Hellwig, O. [San Jose Research Center, Hitachi Global Storage Technologies, 3403 Yerba Buena Road, San Jose, CA 95135 (United States); Fullerton, E.E. [University of California, San Diego, La Jolla, CA (United States); Alberts, H.L. [Department of Physics, University of Johannesburg, P.O. Box 524, Auckland Park, Johannesburg 2006 (South Africa); Berg, N. van den [Department of Physics, University of Pretoria, Lynwood road, Pretoria (South Africa)

    2010-05-15

    Dimensionality effects on epitaxial and polycrystalline Cr{sub 1-x}Ru{sub x} alloy thin films and in Cr/Cr-Ru heterostructures are reported. X-ray analysis on Cr{sub 0.9965}Ru{sub 0.0035} epitaxial films indicates an increase in the coherence length in growth directions (1 0 0) and (1 1 0) with increasing thickness (d), in the range 20<=d<=300 nm. Atomic force microscopy studies on these films shows pronounced vertical growth for d>50 nm, resulting in the formation of columnar structures. The Neel temperatures (T{sub N}) of the Cr{sub 0.9965}Ru{sub 0.0035} films show anomalous behaviour as a function of d at thickness dapprox50 nm. It is interesting to note that this thickness corresponds to that for which a change in film morphology occurs. Experiments on epitaxial Cr{sub 1-x}Ru{sub x} thin films, with 0<=x<=0.013 and d=50 nm, give T{sub N}-x curves that correspond well with that of bulk Cr{sub 1-x}Ru{sub x} alloys. Studies on Cr/Cr{sub 0.9965}Ru{sub 0.0035} superlattices prepared on MgO(1 0 0), with the Cr layer thickness varied between 10 and 50 nm, keeping the Cr{sub 0.9965}Ru{sub 0.0035} thickness constant at 10 nm, indicate a sharp decrease in T{sub N} as the Cr separation layers reaches a thickness of 30 nm; ascribed to spin density wave pinning in the Cr layers for d<30 nm by the adjacent CrRu layers.

  8. Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

    International Nuclear Information System (INIS)

    Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

    2008-01-01

    Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

  9. Growth Mechanism of Strain-Dependent Morphological Change in PEDOT:PSS Films.

    Science.gov (United States)

    Lee, Yoo-Yong; Choi, Gwang Mook; Lim, Seung-Min; Cho, Ju-Young; Choi, In-Suk; Nam, Ki Tae; Joo, Young-Chang

    2016-04-29

    Understanding the mechanism of the strain-dependent conductivity change in polymers in stretched conditions is important. We observed a strain-induced growth of the conductive regions of PSS films, induced by a coalescence of conductive PEDOT-rich cores. This growth due to coalescence leads to a gradual decrease in the electrical resistivity up to 95%, independent of the thickness of the PSS films. The primary mechanism for the evolution of the PEDOT-rich cores proceeds by the cores growing larger as they consuming relatively smaller cores. This process is caused by a strain-induced local rearrangement of PEDOT segments in the vicinity of PSS shells around the cores and also changes the chemical environment in PEDOT, induced by the electron-withdrawing effects around the PEDOT chains. The strain-induced growth mechanism is beneficial to understanding the phenomenon of polymeric chain rearrangement in mechanical deformation and to modulating the electrical conductivity for practical applications.

  10. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakanth, Katturi Naga; Sunandana, C. S. [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Rajesh, Desapogu, E-mail: rajesh.esapogu@gmail.com, E-mail: mperd@nus.edu.sg [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Dept. of Mechanical Engineering, National University of Singapore (Singapore)

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  11. Effect of annealing on the growth dynamics of ZnPc LB thin film and its surface morphology

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Dhrubojyoti, E-mail: dhrubojyoti27@gmail.com; Das, Nayan Mani; Gupta, P. S. [Nanoscience and Thin Film Laboratory, Department of Applied Physics, Indian School of Mines, Dhanbad 826004, India. (India)

    2014-07-15

    The ZnPc molecules in the thin film prepared by Langmuir-Blodgett (LB) process in asdeposited state has been found to have an edge on orientation with average tilt angle of 64.3 ° as confirmed from the Pressure-Area (π-A) isotherm and X-ray diffraction (XRD) study. The ZnPc LB thin film has been observed to have abnormal growth mode at higher annealing temperature and it is mainly driven by minimization of surface free energy which lead to large increase in crystallinity of the film. Kinetically favored orientational and structural transitions of ZnPc thin film during annealing and their effect on the surface morphology of the thin film has been studied using scaling concepts. The scaling exponents 1) root mean square (RMS) roughness σ, 2) roughness exponent α and, 3) in plane correlation length ξ are calculated from the HDCF g(r) and ACF C(r). The RMS surface roughness σ is found to be dependent on the as defined short wavelength undulations (ρ) and long wavelength undulations (χ). Both ρ and χ are the function of all the three scaling exponents. σ has been observed to be maximum for the ZnPc thin film annealed at 290 °C, since the χ shoot to maximum value at this temperature due to the formation of small domains of ZnPc nanorods. The self affinity of the ZnPc thin film is found to decrease on annealing as obtained from both power spectral density (PSD) and HDCF g(R) and ACF C(R) study, which confirms that the dimension of surface morphology of the ZnPc LB thin film transform towards 2D with increase in annealing temperature.

  12. Effect of annealing on the growth dynamics of ZnPc LB thin film and its surface morphology

    Directory of Open Access Journals (Sweden)

    Dhrubojyoti Roy

    2014-07-01

    Full Text Available The ZnPc molecules in the thin film prepared by Langmuir-Blodgett (LB process in asdeposited state has been found to have an edge on orientation with average tilt angle of 64.3 ° as confirmed from the Pressure-Area (π-A isotherm and X-ray diffraction (XRD study. The ZnPc LB thin film has been observed to have abnormal growth mode at higher annealing temperature and it is mainly driven by minimization of surface free energy which lead to large increase in crystallinity of the film. Kinetically favored orientational and structural transitions of ZnPc thin film during annealing and their effect on the surface morphology of the thin film has been studied using scaling concepts. The scaling exponents 1 root mean square (RMS roughness σ, 2 roughness exponent α and, 3 in plane correlation length ξ are calculated from the HDCF g(r and ACF C(r. The RMS surface roughness σ is found to be dependent on the as defined short wavelength undulations (ρ and long wavelength undulations (χ. Both ρ and χ are the function of all the three scaling exponents. σ has been observed to be maximum for the ZnPc thin film annealed at 290 °C, since the χ shoot to maximum value at this temperature due to the formation of small domains of ZnPc nanorods. The self affinity of the ZnPc thin film is found to decrease on annealing as obtained from both power spectral density (PSD and HDCF g(R & ACF C(R study, which confirms that the dimension of surface morphology of the ZnPc LB thin film transform towards 2D with increase in annealing temperature.

  13. Growth mode, morphology, and reducibility of CeO{sub 2}(111) thin films on Cu(111)

    Energy Technology Data Exchange (ETDEWEB)

    Dvorak, Filip; Stetsovych, Oleksandr; Matolinova, Iva; Tsud, Natalya; Skoda, Michal; Myslivecek, Josef; Matolin, Vladimir [Charles University, Faculty of Mathematics and Physics, V Holesovickach 2, Praha 8 (Czech Republic); Steger, Michael; Cherradi, El Miloudi [Heinrich-Heine-Universitaet, Institut fuer Experimentelle Physik der Kondensierten Materie, Universitaetsstrasse 1, Duesseldorf (Germany); Skala, Tomas [Sincrotrone Trieste SCpA, Strada Statale 14, km 163.5, Basovizza-Trieste (Italy)

    2011-07-01

    We investigate morphology and degree of reduction in model oxide system CeO{sub 2} (ceria) on Cu(111) using scanning tunneling microscopy and photoelectron spectroscopy. We identify growth mechanisms of ceria on Cu(111) - formation of incomplete oxide interfacial layer and formation of three-dimensional ceria pyramids by stacking of monolayer-high islands. Using these mechanisms we control the coverage, the number of open monolayers, and the step density of ceria thin films on Cu(111). Annealing in vacuum allows us to control besides the morphology also the degree of ceria surface reduction. We find a correlation between surface reduction and morphological stability in annealed ceria layers. Oriented and stoichiometric thin films of ceria on Cu(111) can be prepared at temperatures as low as 150 C and 250 C. Both the morphology and the degree of reduction of these films readily change with increasing temperature, which must be accounted for in evaluating temperature-programmed experiments with ceria on Cu(111).

  14. Effect of substrate morphology slope distributions on light scattering, nc-Si:H film growth, and solar cell performance.

    Science.gov (United States)

    Kim, Do Yun; Santbergen, Rudi; Jäger, Klaus; Sever, Martin; Krč, Janez; Topič, Marko; Hänni, Simon; Zhang, Chao; Heidt, Anna; Meier, Matthias; van Swaaij, René A C M M; Zeman, Miro

    2014-12-24

    Thin-film silicon solar cells are often deposited on textured ZnO substrates. The solar-cell performance is strongly correlated to the substrate morphology, as this morphology determines light scattering, defective-region formation, and crystalline growth of hydrogenated nanocrystalline silicon (nc-Si:H). Our objective is to gain deeper insight in these correlations using the slope distribution, rms roughness (σ(rms)) and correlation length (lc) of textured substrates. A wide range of surface morphologies was obtained by Ar plasma treatment and wet etching of textured and flat-as-deposited ZnO substrates. The σ(rms), lc and slope distribution were deduced from AFM scans. Especially, the slope distribution of substrates was represented in an efficient way that light scattering and film growth direction can be more directly estimated at the same time. We observed that besides a high σ(rms), a high slope angle is beneficial to obtain high haze and scattering of light at larger angles, resulting in higher short-circuit current density of nc-Si:H solar cells. However, a high slope angle can also promote the creation of defective regions in nc-Si:H films grown on the substrate. It is also found that the crystalline fraction of nc-Si:H solar cells has a stronger correlation with the slope distributions than with σ(rms) of substrates. In this study, we successfully correlate all these observations with the solar-cell performance by using the slope distribution of substrates.

  15. Surface Morphology and Growth of Anodic Titania Nanotubes Films: Photoelectrochemical Water Splitting Studies

    Directory of Open Access Journals (Sweden)

    Chin Wei Lai

    2015-01-01

    become the most studied material as they exhibit promising functional properties. In the present study, anodic TiO2 films with different surface morphologies can be synthesized in an organic electrolyte of ethylene glycol (EG by controlling an optimum content of ammonium fluoride (NH4F using electrochemical anodization technique. Based on the results obtained, well-aligned and bundle-free TiO2 nanotube arrays with diameter of 100 nm and length of 8 µm were successfully synthesized in EG electrolyte containing ≈5 wt% of NH4F for 1 h at 60 V. However, formation of nanoporous structure and compact oxide layer would be favored if the content of NH4F was less than 5 wt%. In the photoelectrochemical (PEC water splitting studies, well-aligned TiO2 nanotubular structure exhibited higher photocurrent density of ≈1 mA/cm2 with photoconversion efficiency of ≈2% as compared to the nanoporous and compact oxide layer due to the higher active surface area for the photon absorption to generate more photo-induced electrons during photoexcitation stage.

  16. Role of organoclay in controlling the morphology and crystal-growth behavior of biodegradable polymer-blend thin films studied using atomic force microscopy

    CSIR Research Space (South Africa)

    Malwela, T

    2014-09-01

    Full Text Available This study reports the effect of organically modified nanoclay on the morphology and crystal growth behavior of biodegradable polylactide/poly[(butylene succinate)-co-adipate] (PLA/PBSA) blend thin films with the average thickness of 280 nm...

  17. Growth morphology and structure of bismuth thin films on GaSb(110)

    DEFF Research Database (Denmark)

    Gemmeren, T. van; Lottermoser, L.; Falkenberg, G.

    1998-01-01

    Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1 x I)-reconstructio......Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1 x I......)-reconstruction is formed at a coverage of one monolayer. A structural model derived from X-ray diffraction data is presented for this phase. The (1 x I)-phase consists of zigzag chains of bismuth atoms bonded alternately to the surface cations and anions of the bulk-terminated unrelaxed (110) surface. We propose...... that the (1 x 1)-phases formed by antimony and bismuth adsorbates on (110) surfaces of other III-V compound semiconductors are also described by the epitaxial continued layer model. (C) 1998 Elsevier Science B.V. All rights reserved....

  18. Growth Rate and Morphology of a Single Calcium Carbonate Crystal on Polysulfone Film Measured with Time Lapse Raman Micro Spectroscopy

    NARCIS (Netherlands)

    Liszka, B.; Lenferink, Aufrid T.M.; Otto, Cornelis

    2016-01-01

    The growth of single, self- nucleated calcium carbonate crystals on a polysulfone (PSU) film was investigated with high resolution, time lapse Raman imaging. The Raman images were acquired on the interface of the polymer with the crystal. The growth of crystals could thus be followed in time. PSU is

  19. Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: Structural, morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia); Segura, Alfredo [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Maghraoui-Meherzi, Hager [Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia)

    2016-09-15

    MnS thin films have been successfully prepared by thermal evaporation method at different substrate temperatures using different masses of MnS powder. The prepared films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and UV–visible spectrophotometry. The XRD measurements show that the films crystallized in the pure α-MnS for substrate temperatures above 100 °C. The optical bandgap of thin films is found to be in the range of 3.2–3.3 eV. A factorial experimental design was used for determining the influence of the two experimental parameters on the films growth. - Highlights: • α-MnS films were deposited on glass and quartz substrates using the thermal evaporation technique. • The effect of substrate temperature on the properties of the MnS films has been studied. • The factorial design was used to determine the most influence parameters.

  20. Effect of selenization time on the structural and morphological properties of Cu(In,Ga)Se2 thin films absorber layers using two step growth process

    Science.gov (United States)

    Korir, Peter C.; Dejene, Francis B.

    2018-04-01

    In this work two step growth process was used to prepare Cu(In, Ga)Se2 thin film for solar cell applications. The first step involves deposition of Cu-In-Ga precursor films followed by the selenization process under vacuum using elemental selenium vapor to form Cu(In,Ga)Se2 film. The growth process was done at a fixed temperature of 515 °C for 45, 60 and 90 min to control film thickness and gallium incorporation into the absorber layer film. The X-ray diffraction (XRD) pattern confirms single-phase Cu(In,Ga)Se2 film for all the three samples and no secondary phases were observed. A shift in the diffraction peaks to higher 2θ (2 theta) values is observed for the thin films compared to that of pure CuInSe2. The surface morphology of the resulting film grown for 60 min was characterized by the presence of uniform large grain size particles, which are typical for device quality material. Photoluminescence spectra show the shifting of emission peaks to higher energies for longer duration of selenization attributed to the incorporation of more gallium into the CuInSe2 crystal structure. Electron probe microanalysis (EPMA) revealed a uniform distribution of the elements through the surface of the film. The elemental ratio of Cu/(In + Ga) and Se/Cu + In + Ga strongly depends on the selenization time. The Cu/In + Ga ratio for the 60 min film is 0.88 which is in the range of the values (0.75-0.98) for best solar cell device performances.

  1. Formation of complex wedding-cake morphologies during homoepitaxial film growth of Ag on Ag(111): atomistic, step-dynamics, and continuum modeling

    Science.gov (United States)

    Li, Maozhi; Han, Yong; Thiel, P. A.; Evans, J. W.

    2009-02-01

    An atomistic lattice-gas model is developed which successfully describes all key features of the complex mounded morphologies which develop during deposition of Ag films on Ag(111) surfaces. We focus on this homoepitaxial thin film growth process below 200 K. The unstable multilayer growth mode derives from the presence of a large Ehrlich-Schwoebel step-edge barrier, for which we characterize both the step-orientation dependence and the magnitude. Step-dynamics modeling is applied to further characterize and elucidate the evolution of the vertical profiles of these wedding-cake-like mounds. Suitable coarse-graining of these step-dynamics equations leads to instructive continuum formulations for mound evolution.

  2. Formation of complex wedding-cake morphologies during homoepitaxial film growth of Ag on Ag(111): atomistic, step-dynamics, and continuum modeling

    Energy Technology Data Exchange (ETDEWEB)

    Li Maozhi [Department of Physics, Renmin University of China, Beijing 100872 (China); Han, Yong [Institute of Physical Research and Technology, Iowa State University, Ames, IA 50011 (United States); Thiel, P A [Departments of Chemistry and Materials Science and Engineering and Ames Laboratory-USDOE, Iowa State University, Ames, IA 50011 (United States); Evans, J W [Department of Mathematics and Ames Laboratory-USDOE, Iowa State University, Ames, IA 50010 (United States)

    2009-02-25

    An atomistic lattice-gas model is developed which successfully describes all key features of the complex mounded morphologies which develop during deposition of Ag films on Ag(111) surfaces. We focus on this homoepitaxial thin film growth process below 200 K. The unstable multilayer growth mode derives from the presence of a large Ehrlich-Schwoebel step-edge barrier, for which we characterize both the step-orientation dependence and the magnitude. Step-dynamics modeling is applied to further characterize and elucidate the evolution of the vertical profiles of these wedding-cake-like mounds. Suitable coarse-graining of these step-dynamics equations leads to instructive continuum formulations for mound evolution.

  3. Formation of complex wedding-cake morphologies during homoepitaxial film growth of Ag on Ag(111): atomistic, step-dynamics, and continuum modeling

    International Nuclear Information System (INIS)

    Li Maozhi; Han, Yong; Thiel, P A; Evans, J W

    2009-01-01

    An atomistic lattice-gas model is developed which successfully describes all key features of the complex mounded morphologies which develop during deposition of Ag films on Ag(111) surfaces. We focus on this homoepitaxial thin film growth process below 200 K. The unstable multilayer growth mode derives from the presence of a large Ehrlich-Schwoebel step-edge barrier, for which we characterize both the step-orientation dependence and the magnitude. Step-dynamics modeling is applied to further characterize and elucidate the evolution of the vertical profiles of these wedding-cake-like mounds. Suitable coarse-graining of these step-dynamics equations leads to instructive continuum formulations for mound evolution.

  4. Ice films follow structure zone model morphologies

    International Nuclear Information System (INIS)

    Cartwright, Julyan H.E.; Escribano, Bruno; Sainz-Diaz, C. Ignacio

    2010-01-01

    Ice films deposited at temperatures of 6-220 K and at low pressures in situ in a cryo-environmental scanning electron microscope show pronounced morphologies at the mesoscale consistent with the structure zone model of film growth. Water vapour was injected directly inside the chamber at ambient pressures ranging from 10 -4 Pa to 10 2 Pa. Several different substrates were used to exclude the influence of their morphology on the grown films. At the lowest temperatures the ice, which under these conditions is amorphous on the molecular scale, shows the mesoscale morphologies typical of the low-temperature zones of the structure zone model (SZM), including cauliflower, transition, spongelike and matchstick morphologies. Our experiments confirm that the SZM is independent of the chemical nature of the adsorbate, although the intermolecular interactions in water (hydrogen bonds) are different to those in ceramics or metals. At higher temperatures, on the other hand, where the ice is hexagonal crystalline on the molecular scale, it displays a complex palmlike morphology on the mesoscale.

  5. Ice films follow structure zone model morphologies

    Energy Technology Data Exchange (ETDEWEB)

    Cartwright, Julyan H.E. [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain); Escribano, Bruno, E-mail: bruno.escribano.salazar@gmail.co [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain); Sainz-Diaz, C. Ignacio [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain)

    2010-04-02

    Ice films deposited at temperatures of 6-220 K and at low pressures in situ in a cryo-environmental scanning electron microscope show pronounced morphologies at the mesoscale consistent with the structure zone model of film growth. Water vapour was injected directly inside the chamber at ambient pressures ranging from 10{sup -4} Pa to 10{sup 2} Pa. Several different substrates were used to exclude the influence of their morphology on the grown films. At the lowest temperatures the ice, which under these conditions is amorphous on the molecular scale, shows the mesoscale morphologies typical of the low-temperature zones of the structure zone model (SZM), including cauliflower, transition, spongelike and matchstick morphologies. Our experiments confirm that the SZM is independent of the chemical nature of the adsorbate, although the intermolecular interactions in water (hydrogen bonds) are different to those in ceramics or metals. At higher temperatures, on the other hand, where the ice is hexagonal crystalline on the molecular scale, it displays a complex palmlike morphology on the mesoscale.

  6. Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors

    Energy Technology Data Exchange (ETDEWEB)

    S Kim; M Jang; H Yang; C Park

    2011-12-31

    Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, were characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.

  7. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  8. Growth of different phases and morphological features of MnS thin films by chemical bath deposition: Effect of deposition parameters and annealing

    International Nuclear Information System (INIS)

    Hannachi, Amira; Maghraoui-Meherzi, Hager

    2017-01-01

    Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferential orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like. - Graphical Abstract: We report the preparation of different phases of manganese sulfide thin films (γ, β and α-MnS) by chemical bath deposition method. The effects of deposition parameters such as deposition time and temperature, concentrations of precursors and multi-layer deposition on MnS thin films structure and morphology were investigated. The influence of thermal annealing under nitrogen atmosphere at different temperature on MnS properties was also studied. Different manganese precursors as well as different complexing agent were also used. - Highlights: • γ and β-MnS films were deposited on substrate using the chemical bath deposition. • The effect of deposition parameters on MnS film properties has been investigated. • Multi-layer deposition was also studied to increase film thickness. • The effect of annealing under N 2 at different temperature was investigated.

  9. Growth of different phases and morphological features of MnS thin films by chemical bath deposition: Effect of deposition parameters and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com; Maghraoui-Meherzi, Hager

    2017-03-15

    Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferential orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like. - Graphical Abstract: We report the preparation of different phases of manganese sulfide thin films (γ, β and α-MnS) by chemical bath deposition method. The effects of deposition parameters such as deposition time and temperature, concentrations of precursors and multi-layer deposition on MnS thin films structure and morphology were investigated. The influence of thermal annealing under nitrogen atmosphere at different temperature on MnS properties was also studied. Different manganese precursors as well as different complexing agent were also used. - Highlights: • γ and β-MnS films were deposited on substrate using the chemical bath deposition. • The effect of deposition parameters on MnS film properties has been investigated. • Multi-layer deposition was also studied to increase film thickness. • The effect of annealing under N{sub 2} at different temperature was investigated.

  10. Evolution of surface morphology at the early stage of Al{sub 2}O{sub 3} film growth on a rough substrate

    Energy Technology Data Exchange (ETDEWEB)

    Filatova, E O [St Petersburg State University, Institute of Physics, St Petersburg 198504 (Russian Federation); Peverini, L; Ziegler, E [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex (France); Kozhevnikov, I V [Institute of Crystallography, Moscow 119333 (Russian Federation); Jonnard, P; Andre, J-M [Laboratoire de Chimie Physique-Matiere et Rayonnement, UPMC Univ Paris 06, CNRS-UMR 7614, 11 rue Pierre et Marie Curie, F-75231 Paris cedex 05 (France)

    2010-09-01

    We present an experimental study of the evolution of the surface of a growing film as a function of the statistical parameters of the virgin substrate roughness. The growth of sputter-deposited Al{sub 2}O{sub 3} films onto Si substrates was followed in situ using an x-ray scattering technique. Despite the use of substrates presenting different roughness correlation length and crystallographic orientation, the evolution of the film roughness is demonstrated to obey the same scaling law, i.e., with the same static and dynamic exponents. Approaches to accurately determine the scaling exponents from x-ray scattering data are discussed.

  11. Substrate morphology repetition in 'thick' polymer films

    International Nuclear Information System (INIS)

    Pietsch, Ullrich; Panzner, Tobias; Pfeiffer, Franz; Robinson, Ian K.

    2005-01-01

    Using Grazing-incidence small-angle scattering (GISAXS) technique we investigated the surface morphology of polymer films spin-coated on different silicon substrates. As substrates we used either technologically smooth silicon wafers or the same silicon wafer coated with thin aluminium or gold films which show a granular structure at the surface. Although the polymer thickness exceeds 300nm the GISAXS pattern of the film shows the same in-plane angle distribution Δ2Θ as the underlying substrate. Annealing the polymer films at a temperature above its glass transition temperature Δ2Θ changed from a broad to a narrow distribution as it is typically for films on pure silicon. The experiment can be interpreted by roughness replication and density fluctuation within the polymer film created while spin-coating at room temperature. Due to the low segment mobility there are density fluctuations which repeat the surface morphology of the substrate. Above the glass temperature the polymer density can be homogenized independently from the morphology of the substrate

  12. Ellipsometry of anodic film growth

    Energy Technology Data Exchange (ETDEWEB)

    Smith, C.G.

    1978-08-01

    An automated computer interpretation of ellisometer measurements of anodic film growth was developed. Continuous mass and charge balances were used to utilize more fully the time dependence of the ellipsometer data and the current and potential measurements. A multiple-film model was used to characterize the growth of films which proceeds via a dissolution--precipitation mechanism; the model also applies to film growth by adsorption and nucleation mechanisms. The characteristic parameters for film growth describe homogeneous and heterogeneous crystallization rates, film porosities and degree of hydration, and the supersaturation of ionic species in the electrolyte. Additional descriptions which may be chosen are patchwise film formation, nonstoichiometry of the anodic film, and statistical variations in the size and orientation of secondary crystals. Theories were developed to describe the optical effects of these processes. An automatic, self-compensating ellipsometer was used to study the growth in alkaline solution of anodic films on silver, cadmium, and zinc. Mass-transport conditions included stagnant electrolyte and forced convection in a flow channel. Multiple films were needed to characterize the optical properties of these films. Anodic films grew from an electrolyte supersatuated in the solution-phase dissolution product. The degree of supersaturation depended on transport conditions and had a major effect on the structure of the film. Anodic reaction rates were limited by the transport of charge carriers through a primary surface layer. The primary layers on silver, zinc, and cadmium all appeared to be nonstoichiometric, containing excess metal. Diffusion coefficients, transference numbers, and the free energy of adsorption of zinc oxide were derived from ellipsometer measurements. 97 figures, 13 tables, 198 references.

  13. Growth morphologies of crystal surfaces

    Science.gov (United States)

    Xiao, Rong-Fu; Alexander, J. Iwan D.; Rosenberger, Franz

    1991-03-01

    We have expanded our earlier Monte Carlo model [Phys. Rev. A 38, 2447 (1988); J. Crystal Growth 100, 313 (1990)] to three dimensions and included reevaporation after accommodation and growth on dislocation-induced steps. We found again that, for a given set of growth parameters, the critical size, beyond which a crystal cannot retain its macroscopically faceted shape, scales linearly with the mean free path in the vapor. However, the three-dimensional (3D) the systems show increased shape stability compared to corresponding 2D cases. Extrapolation of the model results to mean-free-path conditions used in morphological stability experiments leads to order-of-magnitude agreement of the predicted critical size with experimental findings. The stability region for macroscopically smooth (faceted) surfaces in the parameter space of temperature and supersaturation depends on both the surface and bulk diffusion. While surface diffusion is seen to smooth the growth morphology on the scale of the surface diffusion length, bulk diffusion is always destabilizing. The atomic surface roughness increases with increase in growth temperature and supersaturation. That is, the tendency of surface kinetics anisotropies to stabilize the growth shape is reduced through thermal and kinetic roughening. It is also found that the solid-on-solid assumption, which can be advantageously used at low temperatures and supersaturations, is insufficient to describe the growth dynamics of atomically rough interfaces where bulk diffusion governs the process. For surfaces with an emerging screw dislocation, we find that the spiral growth mechanism dominates at low temperatures and supersaturations. The polygonization of a growth spiral decreases with increasing temperature or supersaturation. When the mean free path in the nutrient is comparable to the lattice constant, the combined effect of bulk and surface diffusion reduces the terrace width of a growth spiral in its center region. At elevated

  14. Surface smoothening effects on growth of diamond films

    Science.gov (United States)

    Reshi, Bilal Ahmad; Kumar, Shyam; Kartha, Moses J.; Varma, Raghava

    2018-04-01

    We have carried out a detailed study of the growth dynamics of the diamond film during initial time on diamond substrates. The diamond films are deposited using Microwave Plasma Chemical Vapor Deposition (MPCVD) method for different times. Surface morphology and its correlation with the number of hours of growth of thin films was invested using atomic force microscopy (AFM). Diamond films have smooth interface with average roughness of 48.6873nm. The initial growth dynamics of the thin film is investigated. Interestingly, it is found that there is a decrease in the surface roughness of the film. Thus a smoothening effect is observed in the grown films. The film enters into the growth regime in the later times. Our results also find application in building diamond detector.

  15. Controlling Film Morphology in Conjugated Polymer

    Science.gov (United States)

    Park, Lee Y.; Munro, Andrea M.; Ginger, David S.

    2009-01-01

    We study the effects of patterned surface chemistry on the microscale and nanoscale morphology of solution-processed donor/acceptor polymer-blend films. Focusing on combinations of interest in polymer solar cells, we demonstrate that patterned surface chemistry can be used to tailor the film morphology of blends of semiconducting polymers such as poly-[2-(3,7-dimethyloctyloxy)-5-methoxy-p-phenylenevinylene] (MDMO-PPV), poly-3-hexylthiophene (P3HT), poly[(9,9-dioctylflorenyl-2,7-diyl)-co-benzothiadiazole)] (F8BT), and poly(9,9-dioctylfluorene-co-bis-N,N’-(4-butylphenyl)-bis-N,N’-phenyl-1,4-phenylendiamine) (PFB) with the fullerene derivative, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). We present a method for generating patterned, fullerene-terminated monolayers on gold surfaces, and use microcontact printing and Dip-Pen Nanolithography (DPN) to pattern alkanethiols with both micro- and nanoscale features. After patterning with fullerenes and other functional groups, we backfill the rest of the surface with a variety of thiols to prepare substrates with periodic variations in surface chemistry. Spin coating polymer:PCBM films onto these substrates, followed by thermal annealing under nitrogen, leads to the formation of structured polymer films. We characterize these films with Atomic Force Microscopy (AFM), Raman spectroscopy, and fluorescence microscopy. The surface patterns are effective in guiding phase separation in all of the polymer:PCBM systems investigated, and lead to a rich variety of film morphologies that are inaccessible with unpatterned substrates. We demonstrate our ability to guide pattern formation in films thick enough of be of interest for actual device applications (up to 200 nm in thickness) using feature sizes as small as 100 nm. Finally, we show that the surface chemistry can lead to variations in film morphology on length scales significantly smaller than those used in generating the original surface patterns. The variety of

  16. Skyrmion morphology in ultrathin magnetic films

    Science.gov (United States)

    Gross, I.; Akhtar, W.; Hrabec, A.; Sampaio, J.; Martínez, L. J.; Chouaieb, S.; Shields, B. J.; Maletinsky, P.; Thiaville, A.; Rohart, S.; Jacques, V.

    2018-02-01

    Nitrogen-vacancy magnetic microscopy is employed in the quenching mode as a noninvasive, high-resolution tool to investigate the morphology of isolated skyrmions in ultrathin magnetic films. The skyrmion size and shape are found to be strongly affected by local pinning effects and magnetic field history. Micromagnetic simulations including a static disorder, based on the physical model of grain-to-grain thickness variations, reproduce all experimental observations and reveal the key role of disorder and magnetic history in the stabilization of skyrmions in ultrathin magnetic films. This work opens the way to an in-depth understanding of skyrmion dynamics in real, disordered media.

  17. The influence of nanoscale morphology on the resistivity of cluster-assembled nanostructured metallic thin films

    International Nuclear Information System (INIS)

    Barborini, E; Bertolini, G; Repetto, P; Leccardi, M; Vinati, S; Corbelli, G; Milani, P

    2010-01-01

    We have studied in situ the evolution of the electrical resistivity of Fe, Pd, Nb, W and Mo cluster-assembled films during their growth by supersonic cluster beam deposition. We observed resistivity of cluster-assembled films several orders of magnitude larger than the bulk, as well as an increase in resistivity by increasing the film thickness in contrast to what was observed for atom-assembled metallic films. This suggests that the nanoscale morphological features typical of ballistic films growth, such as the minimal cluster-cluster interconnection and the evolution of surface roughness with thickness, are responsible for the observed behaviour.

  18. The Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

    International Nuclear Information System (INIS)

    Jones, K. M.; Al-Jassim, M. M.; Hasoon, F. S.; Venkatasubramanian, R.

    1999-01-01

    The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4(micro)m range, while the deposition temperature was in the 650-825 C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions

  19. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    KAUST Repository

    Borghi, F.

    2016-08-05

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

  20. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P., E-mail: pmilani@mi.infn.it [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); Sogne, E. [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); European School of Molecular Medicine (SEMM), IFOM-IEO, Milano (Italy); Merlini, M. [Dipartimento di Scienze della Terra “Ardito Desio”, Università degli Studi di Milano, via Mangiagalli 32, 20133 Milano (Italy); Ducati, C. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2016-08-07

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

  1. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  2. Electron confinement in thin metal films. Structure, morphology and interactions

    Energy Technology Data Exchange (ETDEWEB)

    Dil, J.H.

    2006-05-15

    This thesis investigates the interplay between reduced dimensionality, electronic structure, and interface effects in ultrathin metal layers (Pb, In, Al) on a variety of substrates (Si, Cu, graphite). These layers can be grown with such a perfection that electron confinement in the direction normal to the film leads to the occurrence of quantum well states in their valence bands. These quantum well states are studied in detail, and their behaviour with film thickness, on different substrates, and other parameters of growth are used here to characterise a variety of physical properties of such nanoscale systems. The sections of the thesis deal with a determination of quantum well state energies for a large data set on different systems, the interplay between film morphology and electronic structure, and the influence of substrate electronic structure on their band shape; finally, new ground is broken by demonstrating electron localization and correlation effects, and the possibility to measure the influence of electron-phonon coupling in bulk bands. (orig.)

  3. Morphology and Structure of ZnO Films Synthesized by Off-Axis Sputtering Deposition

    Science.gov (United States)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.

    1999-01-01

    ZnO is a wide-band-gap oxide material that has many applications. A new potential application of ZnO material is for light emitting devices since its structure and electrical properties are similar to that of the GaN material (a blue laser candidate). It also is a good substrate for fabricating GaN-based devices. Off-axis sputtering technique has revealed great potential in synthesizing excellent oxide materials because the negative ion bombardment is greatly reduced when adatoms condense on substrates. The surface of films grown by off-axis sputtering will be much smoother than that produced in a regular sputtering configuration. A growth mechanism is studied by investigating the morphology and structure of ZnO films under different growth conditions and orientations. ZnO films are deposited on (0001) sapphire and quartz substrates by off- axis sputtering deposition at various oxygen/argon mixture ratios and pressures and at different temperatures. All films reveal highly textured structures on quartz substrates and epitaxial growth on sapphire substrates. Two off-axis configurations, vertical and horizontal orientations are conducted to study the process of film growth, surface morphology, and film structure. X-ray diffraction, scanning probe microscopy, and electrical measurements are used to characterize these films. Detailed results will be discussed in the presentation. Keywords: ZnO, Photonic material, Off-axis sputtering, Growth mechanism

  4. Growth model of Au films on Ru(001)

    International Nuclear Information System (INIS)

    Canessa, E.; Calmetta, A.

    1992-06-01

    In an attempt to find generic features on the fractal growth of Au films deposited on Ru(001), a simple simulation model based on irreversible diffusion-limited aggregation (DLA) is discussed. Highly irregular two-dimensional dentritic islands of Au particles that gradually grow on a larger host lattice of Ru particles and have fractal dimension d f approx. 1.70 each, are generated via a multiple had-hoc version of the DLA algorithm for single aggregates. Annealing effects on the islands morphology are reproduced assuming different sticking probabilities at nearest-neighbour lattice sites of Au films on Ru(001). Using simulation data, islands growth are described in analogy to diffusion-limited, precipitate growth with soft impingement of precipities. This leads to analyse thin film island growth kinetics in such fractal systems and to predict a main peak in scattering intensity patterns due to interisland interference. (author). 12 refs, 4 figs

  5. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition.

    Science.gov (United States)

    Waltz, Florian; Schwarz, Hans-Christoph; Schneider, Andreas M; Eiden, Stefanie; Behrens, Peter

    2015-01-01

    In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step). In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  6. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    Directory of Open Access Journals (Sweden)

    Florian Waltz

    2015-03-01

    Full Text Available In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps, a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step. In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  7. Morphological and thermal properties of photodegradable biocomposite films

    CSIR Research Space (South Africa)

    Kesavan Pillai, Sreejarani

    2013-07-01

    Full Text Available wt % of titanium dioxide (TiO2) and Ag-TiO2 (silver nanoparticles decorated TiO2) nanoparticles to impart the photodegradable properties. The films were exposed to UV radiation for different time periods and morphology of the composite films before...

  8. Structure and morphology of the polyaniline / polyethylene terephthalate / polyaniline films

    OpenAIRE

    Hnizdyukh, Yulya; Zastavs?ka, Galyna; Yatsyshyn, ?ykhaylo

    2013-01-01

    It was investigated the possibility of the modifying of polyethylene \\ terephtalate films substrates by polyaniline during chemical oxidative polycondensation under the different concentrations of aniline in 0.5 M citrate acid aqueous solution. Structure and morphology of bilateral polyaniline films on polyethylene terephtalate substrates (polyaniline / polyethylene terephtalate / polyaniline) has been studied by UVvisible and FTIR spectroscopy, X-ray diffraction analysis, optical microscopy ...

  9. Effect of RF power and gas flow ratio on the growth and morphology ...

    Indian Academy of Sciences (India)

    It was observed that both the RF power (with the mixed frequency condition) and flow ratio of SiH4/CH4 can control the growth rate, surface roughness and morphology of the PECVD SiC thin films. Higher the carbon content in the thin films the surface became more smoother, whereas the surface became for rougher by ...

  10. Growth rate enhancement and morphology engineering of diamond films by adding CO.sub.2./sub. or N.sub.2./sub. in hydrogen rich gas chemistry

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Davydova, Marina; Varga, Marián; Potocký, Štěpán; Kromka, Alexander

    2014-01-01

    Roč. 6, č. 7 (2014), s. 749-755 ISSN 2164-6627 R&D Projects: GA MPO FR-TI2/736; GA ČR GAP205/12/0908; GA ČR(CZ) GP14-16549P Institutional support: RVO:68378271 Keywords : microwave plasma CVD * diamond growth * nitrogen * carbon dioxide * growth rate * SEM Subject RIV: BM - Solid Matter Physics ; Magnetism

  11. Quantification of Marangoni flows and film morphology during solid film formation by inkjet printing

    Science.gov (United States)

    Ishizuka, Hirotaka; Fukai, Jun

    2018-01-01

    We visualized experimentally the internal flow inside inkjet droplets of polystyrene-anisole solution during solid film formation on substrates at room temperature. The effects of contact angle and evaporation rate on the internal flow and film morphology were quantitatively investigated. The transport process during film formation was examined by measuring the relationship between internal flow and film morphology, which provided three remarkable findings. First, self-pinning and the strength of outward flow on the free surface under 2.3 Pa s determined film morphology. The solute distribution, corresponding to rim areas in ring-like films and a convex trough in dot-like films, had already developed at self-pinning. Second, the mass fraction at self-pinning close to the contact line converged to one, regardless of the film morphology. This implies that self-pinning is independent of parameters such as the contact angle and evaporation rate. Third, at room temperature, the solutal Marangoni numbers were 20-30 times larger than the thermal ones. Thus, the outward flow on the free surface caused by the solutal Marangoni effect dominates in droplets before self-pinning. The solutal Marangoni number at self-pinning and thickness variation at the center of the film displayed a good relationship for droplets with different contact angles and evaporation rates. This suggests that film morphology can be technically controlled by solutal Marangoni number at room temperature.

  12. Morphology Analysis of Cu Film Fractures in Sandwiched Methylmethacrylate Plates

    Directory of Open Access Journals (Sweden)

    Cristiano Fidani

    2015-06-01

    Full Text Available Thin films of Cu were evaporated on solid plates of polymethylmethacrylate (PMMA. A polymerization process was made to realize sandwiched structure to protect the Cu films. Fracturing of the metal film surface was observed with several morphologies showing two different fracture systems. Surface film morphology was analysed in terms of the distribution area of the islands and contour fractal dimension. The island areas showed a maximum corresponding to 42 nm of the Cu thickness, it was also the threshold to observe the second fracture system. The fractures pattern resulted to be scale invariant with fractal dimensions between 1.55 and 1.7. The minimum fractal dimension also occurred at the film thickness corresponding to the maximum island area. The reported effects can be understood on the basis of different thermal expansion coefficients of the two materials and their thermally induced adhesion.DOI: http://dx.doi.org/10.5755/j01.ms.21.2.6518

  13. Growth of organic films on indoor surfaces

    DEFF Research Database (Denmark)

    Weschler, Charles J.; Nazaroff, W. W.

    2017-01-01

    We present a model for the growth of organic films on impermeable indoor surfaces. The model couples transport through a gas-side boundary layer adjacent to the surface with equilibrium partitioning of semivolatile organic compounds (SVOCs) between the gas phase and the surface film. Model....... Once an SVOC is equilibrated with the film, its mass per unit film volume remains constant, while its mass per unit area increases in proportion to overall film thickness. The predictions of the conceptual model and its mathematical embodiment are generally consistent with results reported in the peer...

  14. Electrical transport and morphological study of PLD-grown nanostructured amorphous carbon thin films

    International Nuclear Information System (INIS)

    Kant, K Mohan; Reddy, N Mahipal; Rama, N; Sethupathi, K; Rao, M S Ramachandra

    2006-01-01

    Nanostructured carbon thin films have been actively investigated recently for their electroresistance (ER) properties. Furthermore, carbon films with nonlinear current-voltage (I-V) characteristics have potential application in field-emission devices. This has motivated us to study the effect of various growth parameters on the physical and morphological properties of carbon films grown by pulsed laser deposition (PLD). Carbon films have been deposited using a graphite target at different partial pressures of argon. The morphology of film surfaces deposited at various growth conditions was monitored using an atomic force microscope (AFM). AFM studies showed nanostructured grain growth with average grain size of about 80-90 nm. As the deposition time was decreased down to 1 min, the grain size was also found to decrease correspondingly. From Raman spectroscopic measurements an increase in the I(D)/I(G) ratio and a decrease in FWHM (G) clearly revealed the promotion of sp 2 hybridization as the substrate temperature increased. All the films show semiconducting behaviour with the dominant conduction process being the three-dimensional (3D) variable range hopping (VRH) mechanism. Nonlinear I-V curves were obtained for carbon films deposited on p-type Si indicating diode-like behaviour. The most significant result of this study was the observation of a large electroresistance value

  15. Frictional and morphological properties of Au-MoS2 films sputtered from a compact target

    Science.gov (United States)

    Spalvins, T.

    1984-01-01

    AuMoS2 films 0.02 to 1.2 microns thick were sputtered from target compacted from 5 wt % Au + 95 wt % MoS2, to investigate the frictional and morphological film growth characteristics. The gold dispersion effects in MoS2 films are of interest to increase the densitification and strengthening of the film structure. Three microstructural growth stages were identified on the nano-micro-macrostructural level. During sliding both sputtered Au-MoS2 and MoS2 films have a tendency to break within the columner region. The remaining or effective film, about 0.2 microns thick, performs the lubrication. The Au-MoS2 films displayed a lower friction coefficient with a high degree of frictional stability and less wear debris generation as compared to pure MoS2 films. The more favorable frictional characteristics of the Au-MoS2 films are attributed to the effective film thickness and the high density packed columner zone which has a reduced effect on the fragmentation of the tapered crystallites during fracture.

  16. Semantic growth of morphological families in English

    Directory of Open Access Journals (Sweden)

    Henry Regina

    2013-01-01

    Full Text Available This paper explores the question of when and how morphological families are formed in one’s mental lexicon, by analyzing age-of-acquisition norms to morphological families (e.g., booking, bookshelf, check book and their shared morphemes (book. We demonstrate that the speed of growth and the size of the family depend on how early the shared morpheme is acquired and how many connections the family has at the time a new concept is incorporated in the family. These findings dovetail perfectly with the Semantic Growth model of connectivity in semantic networks by Steyvers and Tenenbaum (2005. We discuss implications of our findings for theories of vocabulary acquisition.

  17. Substrate dependent morphologies of self-assembled nanocrystalline manganite films: An atomic force microscopy study

    International Nuclear Information System (INIS)

    Kale, S.N.; Mona, J.; Ganesan, V.; Choudhary, R.J.; Phase, D.M.

    2009-06-01

    Thin films of La 0 .7Sr 0 .3MnO 3 (LSMO) have been deposited on different substrates: Si (001), Al 2 O 3 (AlO) (0001) and LaAlO 3 (LAO) (001), using a pulsed laser deposition system. 100 nm films have been deposited at substrate temperature of 700 deg C and oxygen partial pressure of 400 mTorr. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al 2 O 3 substrates, while a c-axis oriented growth on LAO substrate. Atomic force microscopy images exhibit interesting island-like morphology of grain size ∼ 250 nm on Si substrate. Similar morphology with much smaller (∼ 150 nm), closely packed islands are seen to grow on AlO substrate. Films on LAO show comparatively a smooth morphology with the grains size less than 100 nm, decorated by characteristic depressions at the grain boundaries. The formation of self-assembled nanostructures can be understood on the basis of film-substrate lattice misfit, strains in the systems and eventual growth of the films to attain energy minimization (author)

  18. Growth of anodic films on niobium

    International Nuclear Information System (INIS)

    Gomes, M.A.B.; Bulhoes, L.O.S.

    1988-01-01

    The analysis of the response of the galvanostatic growth of anodic films on niobium metal in aqueous solutions is shown. The first spark voltage showed a dependence upon value of current density that could be explained as the incorporation of anions into the film. (M.J.C.) [pt

  19. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Unknown

    in nanotubes and sp3 rich amorphous carbons for their application in field emission, device application, etc in- vestigations on sp2 rich amorphous carbon forms are very few. Though DLC films have potential application in field emission (FE) due to their low threshold voltage, the carbon centres, which are believed to play ...

  20. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Amorphous conducting carbon films deposited over quartz substrates were analysed using X-ray diffraction and AFM technique. X-ray diffraction data reveal disorder and roughness in the plane of graphene sheet as compared to that of graphite. This roughness increases with decrease in preparation temperature. The AFM ...

  1. A generalized theory of thin film growth

    Science.gov (United States)

    Du, Feng; Huang, Hanchen

    2018-03-01

    This paper reports a theory of thin film growth that is generalized for arbitrary incidence angle during physical vapor deposition in two dimensions. The accompanying kinetic Monte Carlo simulations serve as verification. A special theory already exists for thin film growth with zero incidence angle, and another theory also exists for nanorod growth with a glancing angle. The theory in this report serves as a bridge to describe the transition from thin film growth to nanorod growth. In particular, this theory gives two critical conditions in analytical form of critical coverage, ΘI and ΘII. The first critical condition defines the onset when crystal growth or step dynamics stops following the wedding cake model for thin film growth. The second critical condition defines the onset when multiple-layer surface steps form to enable nanorod growth. Further, this theory also reveals a critical incidence angle, below which nanorod growth is impossible. The critical coverages, together with the critical incidence angle, defines a phase diagram of thin growth versus nanorod growth.

  2. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  3. Advances in pulsed laser deposition growth of nitride thin films

    Science.gov (United States)

    Fernandez, Felix E.; Pumarol, Manuel; Martinez, Antonio; Jia, Weiyi; Wang, Yanyung; Rodriguez, Edgardo; Mourad, Houssam A.

    1999-07-01

    Pulsed laser deposition of nitride semiconductor films offers an alternative to more usual techniques, such as MOCVD and MBE. PLD can produce good quality films at reduced growth temperatures. Rapid progress has been achieved in the laser few years, including demonstrations of epitaxial growth of GaN directly on sapphire. Work on PLD of direct- transition III- nitrides is briefly reviewed and our recent results for these materials are presented. Growth of these nitrides requires provision of nitrogen in a reactive form, which is usually supplied by NH3 gas flow. With the approach described here, reactive nitrogen is provided in an atomic beam, which has the advantage of reducing dependence on substrate temperature to surmount the kinetic energy barrier for formation, while eliminating a source of hydrogen during growth. Films grown from ceramic GaN targets are compared with those grown from liquid Ga. The latter method can offer better control of unintentional doping. InN films were also grown directly from In metal targets, with very good results in term so stoichiometry and crystalline quality. AlN films were grown from ceramic AlN targets, with excellent texture at reduced temperatures. Results are presented for crystal structure, composition and surface morphology. Optical properties were studied by transmission and luminescence spectroscopy.

  4. Morphology reliance of cobalt sulfide thin films: A chemo-thermo-mechanical perception

    Energy Technology Data Exchange (ETDEWEB)

    Kamble, S.S. [Thin Film & Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India); Sikora, A. [Electrotechnical Institute, Division of Electrotechnology & Materials Science, ul. M Skłodowskiej-Curie 55/61, 50-369 Wroclaw (Poland); Pawar, S.T. [Thin Film & Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India); Kambale, R.C. [Department of Physics, University of Pune, Ganeshkhind, Pune 411 007, M.S. (India); Maldar, N.N. [School of Chemical Sciences, Solapur University, Solapur 413 255, M.S. (India); Deshmukh, L.P., E-mail: laldeshmukh@gmail.com [Thin Film & Solar Studies Research Laboratory, Solapur University, Solapur 413 255, M.S. (India)

    2015-05-15

    Highlights: • Optimized heterogeneous growth process for the deposition of CoS thin films. • As-obtained CoS thin films exhibit hexagonal crystal structure. • Optimized CoS thin films were Co{sup 2+} rich in nature. • Magnetic force microscopy revealed randomly scattered magnetic constellations. - Abstract: We report onto the morphology dependency of CoS thin films by studying the role of mechanical agitation, thermal assistance and deposition duration in an aqueous alkaline bath (pH = 9 ± 0.1). The deposition of CoS thin films was carried out at different mechanical stirring rates, deposition temperatures and times. As-optimized CoS thin film were of polycrystalline nature and exhibited hexagonal crystal structure. Co{sup 2+} rich nature (≈85%) of optimistically grown thin film was detected. Complex multifaceted webbed network of as-grown elongated and threaded into each other CoS crystals was observed through a scanning electron microscope. Surface morphology was further studied by means of an atomic force microscopy. Existence of magnetic domains was marked in the magnetic force microscopy. As-grown CoS thin films were having transmission index of 0.5 with a band gap of ≈1.59 eV.

  5. Spectroellipsometric investigation of optical, morphological, and structural properties of reactively sputtered polycrystalline AlN films

    International Nuclear Information System (INIS)

    Easwarakhanthan, T.; Hussain, S. S.; Pigeat, P.

    2010-01-01

    The optical and morphological properties of reactively sputtered AlN films on Si substrates have been studied in this work from a self-consistent three-layer optical model developed from spectroscopic-ellipsometry analysis and validated by observations from transmission-electron microscopy, Auger electron spectroscopy, and in situ reflectance interferometry. These properties correlate to the film microstructural properties. Accordingly, the almost thickness-independent refractive index of 2.01 of the bulk AlN layer indicates its polycrystalline microstructure. This layer also appears ungraded, homogeneous, isotropic, and free of excess Al, as if grown through a steady process. The small film absorption points to the Urbach tail states produced by the structural disorder typical of such sputtered films. The films' interface layer consists of a graded Bruggeman intermix of outdiffused Si and AlN materials spreading over 10-12 nm thickness. The surface morphology includes an Al 2 O 3 -oxidized outer rough surface gradually becoming AlN bulk with diminishing amounts of Al 2 O 3 and inner pores. The increase in the surface-layer thickness, as the film grows, indicates further surface roughening due to enlarging crystals in a disoriented growth. This spectroscopic-ellipsometry analysis of AlN films has allowed us to study the effect of substrate biasing on the AlN microstructure and to place forward a new processing method for the surface smoothening of rough AlN and diamond films.

  6. Annealing assisted structural and surface morphological changes in Langmuir–Blodgett films of nickel octabutoxy phthalocyanine

    Energy Technology Data Exchange (ETDEWEB)

    Shilpa Harish, T.; Viswanath, P., E-mail: viswanath@cnsms.res.in

    2016-01-01

    We report our studies on thin films of metallo-phthalocyanine (MPc), Nickel(II)1,4,8,11,15,18,22,25-octabutoxy-29H,31H-phthalocyanine (NiPc(OBu){sub 8}) transferred in a well defined thermodynamic state over a self assembled monolayer (octadecyl trichlorosilane)/SiO{sub 2}/Si substrate using the Langmuir–Blodgett (LB) method. The films are characterized using differential scanning calorimetry (DSC), grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) techniques. DSC studies on powdered samples in the bulk indicate enantiotropic solid–solid phase transition. GIXD studies on the as-deposited LB film show a Bragg peak indicating crystallinity of the thin film. Annealing (373 K) results in reduction of lattice spacing (1.21 Å) signifying changes in molecular packing within the unit cell. At this stage, an additional Bragg peak is observed which grows at the expense of the former one and they coexist between 373 K and 423 K. A discontinuity in lattice spacing from 20.73 to 15.12 Å with annealing indicates clearly a structural change of the underlying crystalline lattice. Correspondingly, the surface morphology images obtained using AFM show, with annealing, a transformation from spherical granular morphology to elongated, flat crystallites suggesting asymmetric growth process. Statistical parameters of the grain extracted from the AFM images show that the size, fractal dimension and circularity are affected by annealing. Based on these studies, we infer the structural and surface morphological changes of the meta-stable phase (Form I) to the stable phase (Form II) in annealed LB films of phthalocyanine. - Highlights: • Langmuir–Blodgett (LB) films of phthalocyanine subjected to thermal annealing. • Structural transformation and coexistence of polymorphs in LB films • Surface morphology changes from nanoscale grains to elongated crystallites. • Reduction of fractal dimension and circularity index reveals asymmetric growth.

  7. Role of nucleation in nanodiamond film growth

    International Nuclear Information System (INIS)

    Lifshitz, Y.; Lee, C.H.; Wu, Y.; Zhang, W.J.; Bello, I.; Lee, S.T.

    2006-01-01

    Nanodiamond films were deposited using different microwave plasma chemical vapor deposition schemes following several nucleation pretreatment methods. The nucleation efficiency and the films structure were investigated using scanning and transmission electron microscopy and Raman spectroscopy. C 2 dimer growth (CH 4 and H 2 in 90% Ar) cannot nucleate diamond and works only on existing diamond surfaces. The methyl radical process (up to 20% CH 4 in H 2 ) allows some nucleation probability on appropriate substrates. Prolonged bias enhanced nucleation initiates both diamond nucleation and growth. C 2 dimer growth results in pure nanodiamond free of amorphous carbon, while prolonged bias enhanced nucleation forms an amorphous carbon/nanodiamond composite

  8. Structure and morphology studies of chromium film at elevated ...

    Indian Academy of Sciences (India)

    Abstract. This paper presents the after shock heated structural and morphological studies of chromium film coated on hypersonic test model as a passive drag reduction element. The structural changes and the composition of phases of chromium due to shock heating (2850 K) are characterized using X-ray diffraction studies ...

  9. Structure and morphology studies of chromium film at elevated ...

    Indian Academy of Sciences (India)

    Structure and morphology studies of chromium film at elevated temperature in hypersonic environment ... Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560 012, India; Department of Mechanical Engineering, Indian Institute of Technology, Guwahati, India; Department of Aerospace ...

  10. Epitaxial nucleation and growth of molecular films

    Science.gov (United States)

    Hooks, Daniel Edwin

    2000-10-01

    The last decade has witnessed an increased emphasis on the design and use of molecular-based materials, commonly in thin film form, as components in electronic devices, sensors, displays, and logic elements. The growing interest in films based on molecular components, rather than their more traditional inorganic counterparts, stems largely from the premise that collective optical and electronic properties can be systematically manipulated through molecular design. Many of these properties depend strongly upon film structure and orientation with respect to the substrate upon which they are deposited. This relationship mandates careful attention to the interface between the primary molecular overlayer and the substrate. Further advances in molecular films and multilayer composites based on molecular films require improved understanding of the role of epitaxy in molecular organization as well as the nucleation events that precede film formation. Determination of critical nucleus dimensions and elucidation of the factors that govern critical size are particularly important for fabricating nanoscale molecular features and controlling domain defects in contiguous molecular films. This thesis describes an examination of the role of epitaxy in the growth of molecular films, including a hierarchical classification and grammar of molecular epitaxy, an atomic force microscopy (AFM) investigation of the intercalation of molecular components into multilayer organic-inorganic composites, and an AFM investigation of the nucleation of molecular films.

  11. Physiochemical Characterization of Iodine (V Oxide Part II: Morphology and Crystal Structure of Particulate Films

    Directory of Open Access Journals (Sweden)

    Brian K. Little

    2015-11-01

    Full Text Available In this study, the production of particulate films of iodine (V oxides is investigated. The influence that sonication and solvation of suspended particles in various alcohol/ketone/ester solvents have on the physical structure of spin or drop cast films is examined in detail with electron microscopy, powder x-ray diffraction, and UV-visible absorption spectroscopy. Results indicate that sonicating iodine oxides in alcohol mixtures containing trace amounts of water decreases deposited particle sizes and produces a more uniform film morphology. UV-visible spectra of the pre-cast suspensions reveal that for some solvents, the iodine oxide oxidizes the solvent, producing I2 and lowering the pH of the suspension. Characterizing the crystals within the cast films reveal their composition to be primarily HI3O8, their orientations to exhibit a preferential orientation, and their growth to be primarily along the ac-plane of the crystal, enhanced at higher spin rates. Spin-coating at lower spin rates produces laminate-like particulate films versus higher density, one-piece films of stacked particles produced by drop casting. The particle morphology in these films consists of a combination of rods, plates, cubes, and rhombohedra structure.

  12. Controlled morphologies and optical properties of ZnO films and their photocatalytic activities

    Energy Technology Data Exchange (ETDEWEB)

    Duan Jingjing [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Liu Xiaoheng, E-mail: xhliu@mail.njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Han Qiaofeng [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Wang Xin, E-mail: wangx@mail.njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China)

    2011-09-15

    Highlights: > Gelatin acts as a capping reagent in the morphology synthesis of ZnO films. > The microstructures of ZnO films are hexagonal prisms, plates and rose-like crystals. > The hexagonal prisms and rose-like films exhibit excellent photocatalytic activities. - Abstract: ZnO films with three different microstructures including hexagonal prisms, plates and rose-like twinned crystals were fabricated using chemical bath deposition with different concentration of gelatin. The growth mechanisms of ZnO films were discussed, and the gelatin played a vital role as a polyelectrolyte capping the formation of microstructures. The photoluminescence and Raman properties were found sensitive to the crystal morphologies of ZnO films. Significantly, the photodegradation efficiencies of methylene blue under UV light irradiation in the presence of ZnO films consisted of hexagonal prisms and rose-like twinned crystals were 95% and 96%, respectively. The excellent photocatalytic activities can be ascribed to the high oxygen vacancies concentration and high percentage of polar planes, and this result was important in addressing the origin of high photocatalytic activity.

  13. Optical properties and surface morphology of ZnTe thin films prepared by multiple potential steps

    Energy Technology Data Exchange (ETDEWEB)

    Gromboni, Murilo F.; Lucas, Francisco W. S.; Mascaro, Lucia H., E-mail: lmascaro@ufscar.br [Universidade de Federal de Sao Carlos (LIEC/UFSCar), SP (Brazil). Departamento de Quimica. Lab. de Eletroquimica e Ceramica

    2014-03-15

    In this work, the ZnTe thin films were electrodeposited using potentiostatic steps, on Pt substrate. The effect of steps number, the deposition time for each element (Zn or Te) and layer order (Zn/Te or Te/Zn) in the morphology, composition, band gap energy and photocurrent was evaluated. Microanalysis data showed that the ratio Zn/Te ranged from 0.12 and 0.30 and the film was not stoichiometric. However, the band-gap value obtained from in all experimental conditions used in this work was 2.28 eV, indicating film growth of ZnTe. The samples with higher Zn showed higher photocurrent, which was of the order of 2.64 μA cm{sup -2} and dendritic morphology (author)

  14. Morphological and optical properties of silicon thin films by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Schwarz, R.; Melo, L.V.; Ramalho, R.; Alves, E.; Marques, C.P.; Santos, L.; Almeida, R.; Conde, O.

    2009-01-01

    Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 deg. C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J x cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature

  15. Sprayed Pyrolyzed ZnO Films with Nanoflake and Nanorod Morphologies and Their Photocatalytic Activity

    Directory of Open Access Journals (Sweden)

    Nora S. Portillo-Vélez

    2016-01-01

    Full Text Available There is an increasing interest on the application of ZnO nanorods in photocatalysis and many growth methods have been applied, in particular the spray pyrolysis technique which is attractive for large scale production. However it is interesting to know if the nanorod morphology is the best considering its photocatalytic activity, stability, and cost effectiveness compared to a nonoriented growth. In this work we present a systematic study of the effect of the precursor solution (type of salt, solvent, and concentration on the morphology of sprayed ZnO films to obtain nanoflakes and nanorods without the use of surfactants or catalysts. The surface properties and structural characteristics of these types of films were investigated to elucidate which morphology is more favorable for photocatalytic applications. Wettability and photocatalytic experiments were carried out in the same conditions. After UV irradiation both morphologies became hydrophilic and achieved a dye discoloration efficiency higher than 90%; however, the nanoflake morphology provided the highest photocatalytic performance (99% dye discoloration and stability and the lowest energy consumption during the synthesis process. The surface-to-volume ratio revealed that the nanoflake morphology is more adequate for photocatalytic water treatment applications and that the thin nanorods should be preferred over the large ones.

  16. Electrochemical and morphological characterisation of polyphenazine films on copper

    Energy Technology Data Exchange (ETDEWEB)

    Gouveia-Caridade, Carla; Romeiro, Andreia; Brett, Christopher M.A., E-mail: cbrett@ci.uc.pt

    2013-11-15

    The morphology of films of the phenazine polymers poly(neutral red) (PNR), poly(brilliant cresyl blue) (PBCB), poly(Nile blue A) (PNB) and poly(safranine T) (PST), formed by potential cycling electropolymerisation on copper electrodes, in order to reduce the corrosion rate of copper, has been examined by scanning electron microscopy (SEM). The copper surface was initially partially passivated in sodium oxalate, hydrogen carbonate or salicylate solution, in order to inhibit copper dissolution at potentials where phenazine monomer oxidation occurs, and to induce better polymer film adhesion. SEM images were also taken of partially passivated copper in order to throw light on the different morphology and anti-corrosive behaviour of the polyphenazine films. Analysis of the morphology of the polymer-coated copper with best anti-corrosive behaviour after 72 h immersion in 0.1 M KCl, Cu/hydrogen carbonate/PNB, showed that the surface is completely covered by closely packed crystals. By contrast, images of PST films on copper partially passivated in oxalate solution, that had the least protective behaviour, showed large amounts of insoluble corrosion products after only 4 h immersion in 0.1 M KCl.

  17. Study of diamond film growth and properties

    Science.gov (United States)

    Albin, Sacharial

    1990-01-01

    The objective was to study diamond film growth and its properties in order to enhance the laser damage threshold of substrate materials. Calculations were performed to evaluate laser induced thermal stress parameter, R(sub T) of diamond. It is found that diamond has several orders of magnitude higher in value for R(sub T) compared to other materials. Thus, the laser induced damage threshold (LIDT) of diamond is much higher. Diamond films were grown using a microwave plasma enhanced chemical vapor deposition (MPECVD) system at various conditions of gas composition, pressure, temperature, and substrate materials. A 0.5 percent CH4 in H2 at 20 torr were ideal conditions for growing of high quality diamond films on substrates maintained at 900 C. The diamond films were polycrystalline which were characterized by scanning electron microscopy (SEM) and Raman scattering spectroscopy. The top surface of the growing film is always rough due to the facets of polycrystalline film while the back surface of the film replicates the substrate surface. An analytical model based on two dimensional periodic heat flow was developed to calculate the effective in-plane (face parallel) diffusivity of a two layer system. The effective diffusivity of diamond/silicon samples was measured using a laser pulse technique. The thermal conductivity of the films was measured to be 13.5 W/cm K, which is better than that of a type Ia natural diamond. Laser induced damage experiments were performed on bare Si substrates, diamond film coated Si, and diamond film windows. Significant improvements in the LIDT were obtained for diamond film coated Si compared to the bare Si.

  18. Morphology of Cellulose and Cellulose Blend Thin FilmsMorphology of cellulose and cellulose blend thin films

    Science.gov (United States)

    Lu, Rui

    Cellulose is the most abundant, renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. It is useful to study amorphous cellulose as most reactions happen in the non-crystalline regions first and at the edge of crystalline regions. In this study, amorphous thin films of cotton linter cellulose with various thicknesses were spincoated on silicon wafers from cellulose solutions in dimethyl sulfoxide / ionic liquid mixtures. Optical microscopy and atomic force microscopy indicated that the morphology of as-cast films was sensitive to the film preparation conditions. A sample preparation protocol with low humidity system was developed to achieve featureless smooth films over multiple length scales from nanometers to tens of microns. X-ray reflectivity, X-ray diffraction, Fourier transform infrared spectroscopy and high resolution sum-frequency generation vibrational spectroscopy were utilized to confirm that there were no crystalline regions in the films. One- and three- layer models were used to analyze the X-ray reflectivity data to obtain information about roughness, density and interfacial roughness as a function of film thickness from 10-100nm. Stability tests of the thin films were conducted under harsh conditions including hot water, acid and alkali solutions. The stability of thin films of cellulose blended with the synthetic polymer, polyacrylonitrile, was also investigated. The blend thin films improved the etching resistance to alkali solutions and retained the stability in hot water and acid solutions compared to the pure cellulose films.

  19. Effect of pulse biasing on the morphology of diamond films grown by hot filament CVD

    International Nuclear Information System (INIS)

    Beake, B.D.; Hussain, I.U.; Rego, C.; Ahmed, W.

    1999-01-01

    There has been considerable interest in the chemical vapour deposition (CVD) of diamond due to its unique mechanical, optical and electronic properties, which make it useful for many applications. For use in optical and electronic applications further developments in the CVD process are required to control the surface morphology and crystal size of the diamond films. These will require a detailed understanding of both the nucleation and growth processes that effect the properties. The technique of bias enhanced nucleation (BEN) of diamond offers better reproducibility than conventional pre-treatment methods such as mechanical abrasion. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used study the surface modification of diamond films on silicon substrates during pulse biased growth in a hot filament CVD reactor. Pre-abraded silicon substrates were subjected to a three-step sequential growth process: (i) diamond deposition under standard CVD conditions, (ii) bias pre-treatment and (iii) deposition under standard conditions. The results show that the bias pre-treatment time is a critical parameter controlling the surface morphology and roughness of the diamond films deposited. Biasing reduces the surface roughness from 152 nm for standard CVD diamond to 68 nm for the 2.5 minutes pulse biased film. Further increase in the bias time results in an increase in surface roughness and crystallite size. (author)

  20. Effect of RF power and gas flow ratio on the growth and morphology ...

    Indian Academy of Sciences (India)

    (RF) power with mixed frequency condition and flow ratio of silane to methane were varied by keeping the temper- ature and pressure constant to investigate the influence of these parameters on the growth rate, surface roughness and morphology of SiC thin films. It was observed that both the RF power (with the mixed ...

  1. Correlation of morphology and barrier properties of thin microwave plasma polymer films on metal substrate

    International Nuclear Information System (INIS)

    Barranco, V.; Carpentier, J.; Grundmeier, G.

    2004-01-01

    The barrier properties of thin model organosilicon plasma polymers layers on iron are characterised by means of electrochemical impedance spectroscopy (EIS). Tailored thin plasma polymers of controlled morphology and chemical composition were deposited from a microwave discharge. By the analysis of the obtained impedance diagrams, the evolution of the water uptake φ, coating resistance and polymer capacitance with immersion time were monitored and the diffusion coefficients of the water through the films were calculated. The impedance data correlated well with the chemical structure and morphology of the plasma polymer films with a thickness of less than 100 nm. The composition of the films were determined by means of infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The morphology of the plasma polymer surface and the interface between the plasma polymer and the metal were characterised using atomic force microscopy (AFM). It could be shown that, at higher pressure, the film roughness increases which is probably due to the adsorption of plasma polymer nanoparticles formed in the plasma bulk and the faster film growth. This leads to voids with a size of a few tens of nanometers at the polymer/metal interface. The film roughness increases from the interface to the outer surface of the film. By lowering the pressure and thereby slowing the deposition rate, the plasma polymers perfectly imitate the substrate topography and lead to an excellent blocking of the metal surface. Moreover, the ratio of siloxane bonds to methyl-silyl groups increases which implies that the crosslink density is higher at lower deposition rate. The EIS data consistently showed higher coating resistance as well as lower interfacial capacitance values and a better stability over time for the film deposited at slower pressure. The diffusion coefficient of water in thin and ultra-thin plasma

  2. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  3. Texture control and growth mechanism of WSe{sub 2} film prepared by rapid selenization of W film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou 341300 (China); Gao, Di; Li, Kun; Pang, Mengde; Xie, Senlin [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Liu, Rutie, E-mail: llrrtt@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Zou, Jianpeng [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

    2017-02-01

    Highlights: • We present a highly efficient method for preparing WSe{sub 2} film by rapid selenization. • The W film phase composition has little effect on WSe{sub 2} film orientation. • W film density is a critical factor that influences the WSe{sub 2} orientation. • A growth model was proposed for two kinds of WSe{sub 2} film textures. - Abstract: The tungsten diselenide (WSe{sub 2}) films with different orientation present unique properties suitable for specific applications, such as WSe{sub 2} with a C-axis⊥substrate for optoelectronics and WSe{sub 2} with a C-axis // substrate for electrocatalysts. Orientation control of WSe{sub 2} is essential for realizing the practical applications. In this letter, a WSe{sub 2} film has been prepared via rapid selenization of a magnetron-sputtered tungsten (W) film. The influence of the magnetron-sputtered W film on WSe{sub 2} film growth was studied systematically. Scanning electron microscopy, X-ray diffractometry and high-resolution transmission electron microscopy were used to evaluate the morphology, microstructure and phase composition of the W and WSe{sub 2} films. The substrate temperature has a significant effect on the W film phase composition, but little effect on the WSe{sub 2} film orientation. The WSe{sub 2} orientation can be controlled by changing the W film microstructure. A dense W film that is deposited at low pressure is conducive to the formation of WSe{sub 2} with a C-axis⊥substrate, whereas a porous W film deposited at high pressure favors the formation of WSe{sub 2} with a C-axis // substrate. A growth model for the WSe{sub 2} film with different texture has been proposed based on the experimental results. The direction of selenium (Se) vapor diffusion differs at the top and side surfaces. This is a key factor for the preparation of anisotropic WSe{sub 2} films. Highly oriented WSe{sub 2} films with a C-axis⊥substrate grow from the dense W film deposited at low pressure because Se vapor

  4. Influence of organoclay type on morphology of polymer films

    International Nuclear Information System (INIS)

    Gama, D.B.; Tavares, A.A.; Silva, D.F.A; Silva, S.M.L; Andrade, D.L.A.C.S.

    2011-01-01

    In this work, bentonite clay from Paraiba has been purified (removed organic matter) and then modified with the surfactants, cetyl trimethyl ammonium bromide (Cetremide) and hexadecyl tributyl phosphonium bromide (phosphonium) to obtain organoclays to be incorporated into polymer films. The clays were characterized by X-ray diffraction (XRD), thermogravimetry (TG) and infrared spectroscopy (FTIR) and films by X-ray diffraction (XRD). The results showed that the interplanar basal distance of the bentonite modified with salts, and phosphonium Cetremide, showed higher values than the natural bentonite, thus confirming the intercalation of organic cations between the clay galleries and thus to obtain organoclays and that the type of organoclay influence the morphology of the films obtained. (author)

  5. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ajaib [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Schipmann, Susanne [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Mathur, Aakash; Pal, Dipayan [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Sengupta, Amartya [Department of Physics, Indian Institute of Technology Delhi, Delhi 110016 (India); Klemradt, Uwe [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Chattopadhyay, Sudeshna, E-mail: sudeshna@iiti.ac.in [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Discipline of Physics, Indian Institute of Technology Indore, Indore 453552 (India); Centre for Biosciences and Biomedical Engineering, Indian Institute of Technology Indore, Indore 453552 (India)

    2017-08-31

    Highlights: • Ultra-thin ZnO films grown on confined polymeric (polystyrene, PS) template. • XRR and GISAXS explore the surface/interfaces structure and morphology of ZnO/PS. • Insights into the growth mechanism of magnetron sputtered ZnO thin film on PS template. • Nucleated disk-like cylindrical particles are the basis of the formation of ZnO layers. • Effect of ZnO film thickness on room temperature PL spectra in ZnO/PS systems. - Abstract: The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2R{sub g} film thickness, where R{sub g} ∼ 20 nm (R{sub g} is the unperturbed radius of gyration of polystyrene, defined by R{sub g} = 0.272 √M{sub 0}, and M{sub 0} is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2–7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  6. Composition and morphological characteristics of chemically sprayed fluorine-doped zinc oxide thin films deposited on Si(1 0 0)

    International Nuclear Information System (INIS)

    Castaneda, L.; Maldonado, A.; Cheang-Wong, J.C.; Terrones, M.; Olvera, M. de la L

    2007-01-01

    Fluorine-doped zinc oxide thin films (ZnO:F) were deposited on Si(1 0 0) substrates by the chemical spray technique (CST) from an aged-solution. The effect of the substrate temperature on the morphology and composition of the ZnO:F thin films was studied. The films were polycrystalline, with a preferential growth along the ZnO (0 0 2) plane, irrespective of the deposition temperature. The average crystal size within the films was ca. 35 nm and the morphology of the surface was found to be dependent on the substrate temperature. At low substrate temperatures irregular-shaped grains were observed, whereas at higher temperatures uniform flat grains were obtained. Elemental analysis showed that the composition of the films is close to stoichiometric ZnO and that samples contain quite a low fluorine concentration, which decreases as a function of the deposition temperature

  7. Composition and morphological characteristics of chemically sprayed fluorine-doped zinc oxide thin films deposited on Si(1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Castaneda, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510 D. F. (Mexico); Departamento de Fisica y Matematicas, Division de Ciencia, Arte y Tecnologia, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D. F. (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Apartado Postal 14740, Mexico, D.F. 07000 (Mexico); Cheang-Wong, J.C. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Apartado Postal 20-364, Mexico, D.F. 01000 (Mexico); Terrones, M. [Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas, 4a. seccion, San Luis Potosi, 78216 (Mexico); Departamento de Fisica y Matematicas, Division de Ciencia, Arte y Tecnologia, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D. F. (Mexico); Olvera, M. de la L [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Apartado Postal 14740, Mexico, D.F. 07000 (Mexico)]. E-mail: molvera@cinvestav.mx

    2007-03-01

    Fluorine-doped zinc oxide thin films (ZnO:F) were deposited on Si(1 0 0) substrates by the chemical spray technique (CST) from an aged-solution. The effect of the substrate temperature on the morphology and composition of the ZnO:F thin films was studied. The films were polycrystalline, with a preferential growth along the ZnO (0 0 2) plane, irrespective of the deposition temperature. The average crystal size within the films was ca. 35 nm and the morphology of the surface was found to be dependent on the substrate temperature. At low substrate temperatures irregular-shaped grains were observed, whereas at higher temperatures uniform flat grains were obtained. Elemental analysis showed that the composition of the films is close to stoichiometric ZnO and that samples contain quite a low fluorine concentration, which decreases as a function of the deposition temperature.

  8. Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

    KAUST Repository

    Trinh, Cong

    2012-07-10

    We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz), forming a film composed of the metal-ligand complex. Fast and quantitative formation of the complex leads to marked changes in the morphology and optical properties of the film. X-ray diffraction studies show that the chemical annealing process converts amorphous ZnTPP films to crystalline ZnTPP•ligand films, whose porphryin planes lie nearly parallel to the substrate (average deviation is 8° for the ZnTPP•pz film). Organic solar cells were prepared with ZnTPP donor and C 60 acceptor layers. Devices were prepared with and without chemical annealing of the ZnTPP layer with a pyrazine ligand. The devices with chemically annealed ZnTPP donor layer show an increase in short-circuit current (J SC) and fill factor (FF) relative to analogous unannealed devices, presumably because of enhanced exciton diffusion length and improved charge conductivity. The open circuit voltages (V OC) of the chemically annealed devices are lower than their unannealed counterpart because of enhanced polaron pair recombination at the donor/acceptor heterojunction. A net improvement of 5-20% in efficiency has been achieved, after chemical annealing of ZnTPP films with pyrazine. © 2012 American Chemical Society.

  9. Growth mode and texture study in vanadium dioxide thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Wei Xiongbang; Wu Zhiming; Xu Xiangdong; Tao Wang; Tang Jingjing; Li Weizhi; Jiang Yadong

    2008-01-01

    Vanadium dioxide (VO 2 ) films with thicknesses of 80, 440 and 1000 nm were deposited on glass substrates by reactive dc magnetron sputtering. The crystallization, surface morphology and structural features were studied by x-ray diffraction, atomic force microscope and scanning electron microscope. Results revealed that the structural features of VO 2 films strongly depend on the film thickness. The grain size and the crystallization extent increase with the increase in film thickness. The growth of VO 2 was demonstrated to be an obvious 'columnar' growth perpendicular to the surface of the glass substrate. Analyses of square resistance and its temperature dependence demonstrated that the thickness of VO 2 films plays an important role in their electric properties. With increasing film thickness, the square resistance decreases, the temperature coefficient of the square resistance increases and the metal-semiconductor phase transition becomes obvious

  10. Growth and characterization of V2 O5 thin film on conductive electrode.

    Science.gov (United States)

    Mola, Genene T; Arbab, Elhadi A A; Taleatu, Bidini A; Kaviyarasu, K; Ahmad, Ishaq; Maaza, M

    2017-02-01

    Vanadium pentoxide V 2 O 5 thin films were grown at room temperature on ITO coated glass substrates by electrochemical deposition. The resulting films were annealed at 300, 400 and 500°C for 1 h in ambient environment. The effect of heat treatment on the films properties such as surface morphology, crystal structure, optical absorption and photoluminescence were investigated. The x-ray diffraction study showed that the films are well crystallized with temperatures. Strong reflection from plane (400) indicated the film's preferred growth orientation. The V 2 O 5 films are found to be highly transparent across the visible spectrum and the measured photoluminescence quenching suggested the film's potential application in OPV device fabrication. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

  11. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Hyeonju Lee

    2016-10-01

    Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

  12. Energetic condensation growth of Nb thin films

    Directory of Open Access Journals (Sweden)

    M. Krishnan

    2012-03-01

    Full Text Available This paper describes energetic condensation growth of Nb films using a cathodic arc plasma, whose 60–120 eV ions penetrate a few monolayers into the substrate and enable sufficient surface mobility to ensure that the lowest energy state (crystalline structure with minimal defects is accessible to the film. Heteroepitaxial films of Nb were grown on a-plane sapphire and MgO crystals with good superconducting properties and crystal size (10  mm×20  mm limited only by substrate size. The substrates were heated to temperatures of up to 700°C and coated at 125°C, 300°C, 500°C, and 700°C. Film thickness was varied from ∼0.25  μm to >3  μm. Residual resistivity ratio (⟨RRR⟩ values (up to a record ⟨RRR⟩=587 on MgO and ⟨RRR⟩=328 on a-sapphire depend strongly on substrate annealing and deposition temperatures. X-ray diffraction spectra and pole figures reveal that RRR increases as the crystal structure of the Nb film becomes more ordered, consistent with fewer defects and, hence, longer electron mean-free path. A transition from Nb(110 to Nb(100 orientation on the MgO(100 lattice occurs at higher temperatures. This transition is discussed in light of substrate heating and energetic condensation physics. Electron backscattered diffraction and scanning electron microscope images complement the XRD data.

  13. Spectrum Conversion Film for Regulation of Plant Growth

    OpenAIRE

    Hidaka, Kota; Yoshida, Katsuhira; Shimasaki, Kazuhiro; Murakami, Katsusuke; Yasutake, Daisuke; Kitano, Masaharu

    2008-01-01

    In order to regulate the plant growth, we newly developed the spectrum conversion films (red film and blue film). The red film can convert the blue-green light (450-550 nm) into the red light (600-700 nm), and the blue film can convert the ultraviolet (UV)-violet light (350-450 nm) into the blue-green light. The effect of covering plants with these films on leaf photosynthesis, plant growth and seed germination were examined in three species of plants under the natural light. Leaf photosynthe...

  14. Coarsening and pattern formation during true morphological phase separation in unstable thin films under gravity

    Science.gov (United States)

    Kumar, Avanish; Narayanam, Chaitanya; Khanna, Rajesh; Puri, Sanjay

    2017-12-01

    We address in detail the problem of true morphological phase separation (MPS) in three-dimensional or (2 +1 )-dimensional unstable thin liquid films (>100 nm) under the influence of gravity. The free-energy functionals of these films are asymmetric and show two points of common tangency, which facilitates the formation of two equilibrium phases. Three distinct patterns formed by relative preponderance of these phases are clearly identified in "true MPS". Asymmetricity induces two different pathways of pattern formation, viz., defect and direct pathway for true MPS. The pattern formation and phase-ordering dynamics have been studied using statistical measures such as structure factor, correlation function, and growth laws. In the late stage of coarsening, the system reaches into a scaling regime for both pathways, and the characteristic domain size follows the Lifshitz-Slyozov growth law [L (t ) ˜t1 /3] . However, for the defect pathway, there is a crossover of domain growth behavior from L (t ) ˜t1 /4→t1 /3 in the dynamical scaling regime. We also underline the analogies and differences behind the mechanisms of MPS and true MPS in thin liquid films and generic spinodal phase separation in binary mixtures.

  15. Growth morphology of zinc tris (thiourea) sulphate crystals

    Indian Academy of Sciences (India)

    The growth morphology of crystals of zinc tris(thiourea) sulphate (ZTS) is investigated experimentally, and computed using the Hartman–Perdok approach. Attachment energies of the observed habit faces are calculated for determining their relative morphological importance. A computer code is developed for carrying out ...

  16. Equilibrium And Growth Morphologies Of Trinickel Boride Ni3b ...

    African Journals Online (AJOL)

    The morphology of the trinickel boride Ni3B precipitates during slow cooling in differential thermal analysis (DTA) has been investigated using high resolution electron microscopy (HREM). Due to the large development of the facets of the type {022}, the crystal tends towards an equilibrium morphology whereas the growth ...

  17. Growth morphology of zinc tris(thiourea) sulphate crystals

    Indian Academy of Sciences (India)

    Abstract. The growth morphology of crystals of zinc tris(thiourea) sulphate (ZTS) is investigated experimentally, and computed using the Hartman–Perdok approach. Attachment energies of the observed habit faces are calculated for determining their relative morphological importance. A com- puter code is developed for ...

  18. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  19. Growth and characterization of Hg 1– Cd Te epitaxial films by ...

    Indian Academy of Sciences (India)

    Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

  20. Preparation and properties of nanometer silk fibroin peptide/polyvinyl alcohol blend films for cell growth.

    Science.gov (United States)

    Luo, Qin; Chen, Zhongmin; Hao, Xuefei; Zhu, Qiangsong; Zhou, Yucheng

    2013-10-01

    Nanometer silk fibroin peptide (Nano-SFP) was prepared from silkworm cocoons through the process of dissolution, dialysis and enzymolysis. For comparison, silk fibroin was decomposed with α-chymotrypsin, trypsin and neutrase, respectively. From the SEM and particle size analysis results, the Nano-SFP prepared by neutrase was found to be the most desirable at about 50-200 nm. Nano-SFP/polyvinyl alcohol films (Nano-SFP/PVA) were prepared by blending Nano-SFP and PVA in water with different weight ratios of 10/90, 20/80, 30/70, and 40/60. The films were characterized by IR, SEM, TG, DSC and tensile strength test for investigating their structure, surface morphology, thermostability, and mechanical property. The results showed that Nano-SFP inserted in the PVA films with small linear particles, and Nano-SFP/PVA films exhibited smooth surface, good thermostability and tensile strength. The growth of Chinese hamster ovary (CHO) cells on films with and without Nano-SFP was investigated with MTT colorimetric assay to assess the films' ability to promote cell growth. It was observed that the Nano-SFP improved cell adhesion on the film surface, and the ability of promoting cell growth increased with the increasing content of Nano-SFP in the blend films. Nano-SFP/PVA film with the ratio of 30/70 was concluded to have the best properties. Copyright © 2013 Elsevier B.V. All rights reserved.

  1. Growth Aspects of Thin-Film Composite Heterostructures of Oxide Multicomponent Perovskites for Electronics

    Science.gov (United States)

    Endo, Kazuhiro; Badica, Petre; Arisawa, Shunichi; Kezuka, Hiroshi; Endo, Tamio

    2012-11-01

    We review, based on our results, the problems and solutions for the growth of thin films and composite heterostructures emphasizing the general growth aspects and principles vs specifics for each material or heterostructure. The materials used in our examples are Bi2Sr2Ca2Cu3O10, Bi2Sr2CaCu2O8, YBa2Cu3O7, (Sr, Ca)CuO2, (Ba, Ca)CuO2, and Bi4Ti3O12. The growth method was metal organic chemical vapor deposition (MOCVD). The presented thin films or heterostructures have c- and non-c-axis orientations. We discuss the implications of the film-substrate lattice relationships, paying attention to film-substrate lattice mismatch anisotropy and to film-film lattice mismatch, which has a significant influence on the quality of the non-c-axis heterostructures. We also present growth control through the use of vicinal substrates and two-temperature (template) and interrupted growth routes allowing significant quality improvements or optimization. Other key aspects of the growth mechanism, that is, roughness, morphology, and interdiffusion, are addressed. It is concluded that the requirements for the growth of non-c-axis heterostructures are more severe than those for the c-axis ones.

  2. Solvent-assisted growth of metal phthalocyanine thin films on Au(111)

    Energy Technology Data Exchange (ETDEWEB)

    Tskipuri, Levan; Shao Qian; Reutt-Robey, Janice [Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742-4454 (United States)

    2012-05-15

    Thin films of metal phthalocyanine (MPc) are grown on an Au(111) support with a newly developed aerosol molecular beam deposition source and characterized in situ via ultrahigh vacuum scanning tunneling microscopy. MPcs are delivered to Au(111) in a series of N{sub 2}-entrained microsized solvent droplets of variable surface residence time. Phthalocyanine film registration to the herringbone reconstruction of the Au(111) surface, indicative of thermodynamically favored structure, is observed at submonolayer coverages for aromatic solvents with long residence times. Aerosol-deposited monolayer film structures are noncrystalline with tilted MPc orientations and vacancy nanocavities. Upon annealing, MPc molecules adopt flat-lying orientations with respect to the substrate and vacancies are eliminated. Film morphologies indicate solvation-mediated film nucleation and growth, with less long-range ordering that in vapor-generated films.

  3. Morphology modulating the wettability of a diamond film.

    Science.gov (United States)

    Tian, Shibing; Sun, Weijie; Hu, Zhaosheng; Quan, Baogang; Xia, Xiaoxiang; Li, Yunlong; Han, Dong; Li, Junjie; Gu, Changzhi

    2014-10-28

    Control of the wetting property of diamond surface has been a challenge because of its maximal hardness and good chemical inertness. In this work, the micro/nanoarray structures etched into diamond film surfaces by a maskless plasma method are shown to fix a surface's wettability characteristics, and this means that the change in morphology is able to modulate the wettability of a diamond film from weakly hydrophilic to either superhydrophilic or superhydrophobic. It can be seen that the etched diamond surface with a mushroom-shaped array is superhydrophobic following the Cassie mode, whereas the etched surface with nanocone arrays is superhydrophilic in accordance with the hemiwicking mechnism. In addition, the difference in cone densities of superhydrophilic nanocone surfaces has a significant effect on water spreading, which is mainly derived from different driving forces. This low-cost and convenient means of altering the wetting properties of diamond surfaces can be further applied to underlying wetting phenomena and expand the applications of diamond in various fields.

  4. Morphological stabilization and KPZ scaling by electrochemically induced co-deposition of nanostructured NiW alloy films.

    Science.gov (United States)

    Orrillo, P A; Santalla, S N; Cuerno, R; Vázquez, L; Ribotta, S B; Gassa, L M; Mompean, F J; Salvarezza, R C; Vela, M E

    2017-12-21

    We have assessed the stabilizing role that induced co-deposition has in the growth of nanostructured NiW alloy films by electrodeposition on polished steel substrates, under pulsed galvanostatic conditions. We have compared the kinetic roughening properties of NiW films with those of Ni films deposited under the same conditions, as assessed by Atomic Force Microscopy. The surface morphologies of both systems are super-rough at short times, but differ at long times: while a cauliflower-like structure dominates for Ni, the surfaces of NiW films display a nodular morphology consistent with more stable, conformal growth, whose height fluctuations are in the Kardar-Parisi-Zhang universality class of rough two-dimensional interfaces. These differences are explained by the mechanisms controlling surface growth in each case: mass transport through the electrolyte (Ni) and attachment of the incoming species to the growing interface (NiW). Thus, the long-time conformal growth regime is characteristic of electrochemical induced co-deposition under current conditions in which surface kinetics is hindered due to a complex reaction mechanism. These results agree with a theoretical model of surface growth in diffusion-limited systems, in which the key parameter is the relative importance of mass transport with respect to the kinetics of the attachment reaction.

  5. Effect of plant growth promoting rhizobacteria on root morphology of ...

    African Journals Online (AJOL)

    Rooting characteristics significantly affect the water-use patterns and acquirement of nutrient for any plant species. Plant growth promoting rhizobacteria improve the plant growth by a variety of ways like the production of phytohormones, nitrogen fixation, phosphate solubilization and improvement in root morphology etc, ...

  6. Review of the fundamentals of thin-film growth.

    Science.gov (United States)

    Kaiser, Norbert

    2002-06-01

    The properties of a thin film of a given material depend on the film's real structure. The real structure is defined as the link between a thin film's deposition parameters and its properties. To facilitate engineering the properties of a thin film by manipulating its real structure, thin-film formation is reviewed as a process starting with nucleation followed by coalescence and subsequent thickness growth, all stages of which can be influenced by deposition parameters. The focus in this review is on dielectric and metallic films and their optical properties. In contrast to optoelectronics all these film growth possibilities for the engineering of novel optical films with extraordinary properties are just beginning to be used.

  7. A study on the growth mechanism and the process parameters controlling aluminum oxide thin films deposition by pulsed pressure MOCVD

    OpenAIRE

    Murthy, Hari; Miya, S. S; Krumdieck, Susan

    2016-01-01

    Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the deposited film and the control of the film morphology by varying the processing parameters of PP-MOCVD - choice of solvent, concentration, and presence of a shield. Aluminum sec-butoxide (ASB) was used as the aluminum source while hexane and toluene were use...

  8. Smooth growth of organic semiconductor films on graphene for high-efficiency electronics.

    Science.gov (United States)

    Hlawacek, Gregor; Khokhar, Fawad S; van Gastel, Raoul; Poelsema, Bene; Teichert, Christian

    2011-02-09

    High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron microscopy and micro low energy electron diffraction reveal the morphological and structural evolution of the thin film. The layer-by-layer growth of 6P on graphene proceeds by subsequent adding of {111} layers.

  9. Craniofacial morphology in Turner syndrome patients treated with growth hormone

    Directory of Open Access Journals (Sweden)

    Jovana Julsoki

    2015-05-01

    Full Text Available ABSTRACT Introduction: In addition to well-established physical characteristics, Turner syndrome patients have distinct craniofacial morphology. Since short stature is the most typical characteristic, Turner syndrome patients are commonly treated with growth hormone in order to increase final height. At the same time, growth hormone treatment was found to influence craniofacial growth and morphology in various groups of treated patients. Whereas craniofacial characteristics of Turner syndrome patients are well documented, comparatively little is known of craniofacial morphology of those who are treated with growth hormone. Aim: The aim of this study was to investigate craniofacial morphology in Turner syndrome patients treated with growth hormone in comparison to healthy females. Materials and methods: The cephalometric evaluation was conducted on twenty lateral cephalograms of Turner syndrome patients (13.53 ± 4.04 years treated with growth hormone for at least one year (4.94 ± 1.92 years in average. As a control group, forty lateral cephalograms of healthy female controls, who matched Turner syndrome patients by chronological (11.80 ± 2.37 years and skeletal age, were used. Eleven angular, seven linear measurements and six dimensional ratios were measured to describe craniofacial morphology. Results: The results obtained for angular measurements, in cephalometric analyses for Turner syndrome patients treated with growth hormone, revealed bimaxillary retrognathism. The linear measurements indicated longer mandibular ramus, anterior cranial base and both anterior and posterior facial heights. However, posterior cranial base and maxilla were in proportion to the anterior cranial base, when comparing dimensional ratios. Anterior cranial base, maxilla and mandibular ramus were larger in proportion to mandibular body; as well as posterior facial height was when compared to anterior facial height. Turner syndrome patients treated with growth

  10. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  11. Controlling the nanoscale morphology of organic films deposited by polyatomic ions

    CERN Document Server

    Hanley, L; Fuoco, E R; Ahu-Akin, F; Wijesundara, M B J; Li, Maozhen; Tikhonov, A; Schlossman, M

    2003-01-01

    Hyperthermal polyatomic ion beams can be used to fabricate thin film nanostructures with controlled morphology. Several experiments are described in which mass-selected and non-mass-selected polyatomic ion beams are used to create nanometer thick films with controlled surface and buried interface morphologies. Fluorocarbon and thiophenic films are grown on silicon wafers and/or polystyrene from 5 to 200 eV C sub 3 F sub 5 sup + or C sub 4 H sub 4 S sup + ions, respectively. X-ray photoelectron spectroscopy, atomic force microscopy, X-ray reflectivity, and scanning electron microscopy are utilized to analyze the morphology and chemistry of these films. Polyatomic ions are found to control film morphology on the nanoscale through variation of the incident ion energy, ion structure and/or substrate.

  12. Novel multiform morphologies of hydroxyapatite: Synthesis and growth mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Mary, I. Reeta [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India); Department of Physics, Government Arts College, Coimbatore 641018 (India); Sonia, S.; Viji, S.; Mangalaraj, D.; Viswanathan, C. [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India); Ponpandian, N., E-mail: ponpandian@buc.edu.in [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India)

    2016-01-15

    Graphical abstract: - Highlights: • Novel multiform morphologies of hydroxyapatite from nanoscale building blocks. • Facile hydro/solvothermal method under mild reaction conditions without the necessity of post-annealing treatment. • Growth mechanism by Ostwald ripening and self-assembly processes. - Abstract: Morphological evolution of materials becomes a prodigious challenge due to their key role in defining their functional properties and desired applications. Herein, we report the synthesis of hydroxyapatite (HAp) microstructures with multiform morphologies, such as spheres, cubes, hexagonal rods and nested bundles constructed from their respective nanoscale building blocks via a simple cost effective hydro/solvothermal method. A possible formation mechanism of diverse morphologies of HAp has been presented. Structural analysis based on X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy confirms the purity of the HAp microstructures. The multiform morphologies of HAp were corroborated by using Field emission scanning electron microscope (FESEM).

  13. Novel multiform morphologies of hydroxyapatite: Synthesis and growth mechanism

    International Nuclear Information System (INIS)

    Mary, I. Reeta; Sonia, S.; Viji, S.; Mangalaraj, D.; Viswanathan, C.; Ponpandian, N.

    2016-01-01

    Graphical abstract: - Highlights: • Novel multiform morphologies of hydroxyapatite from nanoscale building blocks. • Facile hydro/solvothermal method under mild reaction conditions without the necessity of post-annealing treatment. • Growth mechanism by Ostwald ripening and self-assembly processes. - Abstract: Morphological evolution of materials becomes a prodigious challenge due to their key role in defining their functional properties and desired applications. Herein, we report the synthesis of hydroxyapatite (HAp) microstructures with multiform morphologies, such as spheres, cubes, hexagonal rods and nested bundles constructed from their respective nanoscale building blocks via a simple cost effective hydro/solvothermal method. A possible formation mechanism of diverse morphologies of HAp has been presented. Structural analysis based on X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy confirms the purity of the HAp microstructures. The multiform morphologies of HAp were corroborated by using Field emission scanning electron microscope (FESEM).

  14. Surface morphology of polyethylene glycol films produced by matrix-assisted pulsed laser evaporation (MAPLE): Dependence on substrate temperature

    DEFF Research Database (Denmark)

    Rodrigo, K.; Czuba, P.; Toftmann, B.

    2006-01-01

    The dependence of the surface morphology on the substrate temperature during film deposition was investigated for polyethylene glycol (PEG) films by matrix-assisted pulsed laser evaporation (MAPLE). The surface structure was studied with a combined technique of optical imaging and AFM measurements....... There was a clear difference between the films produced below and above the melting point of PEG. For temperatures above the melting point, the polymer material was distributed non-uniformly over the substrate with growths areas, where cluster-like structures merge into large islands of micrometer size....... At these temperatures, the islands in the investigated growth areas cover most of the bottom layer which has a typical height of 50-150 nm. (c) 2005 Elsevier B.V. All rights reserved....

  15. Ion-mixing-induced fractal growth in thin alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Liu Baixin (Dept. of Materials Science and Engineering, Tsinghua Univ., Beijing (China) Center of Condensed Matter and Radiation Physics, CCAST (World Lab.), Beijing (China))

    1991-07-01

    Fractal patterns were observed in Ni-Mo and Ag-Co multilayers after ion mixing to a critical dose. The formation of these fractals was through a multinucleation growth process similar to the cluster-diffusion-limited aggregation (CDLA). The Ni-Mo fractals had a fractal dimension of 1.72, being the same as predicted by the CDLA model, while the Co fractals on Ag-Co films had a smaller dimension, because of the magnetic interaction among the aggregating particles. Another study was performed on four magnetic metals, i.e. Fe, Co, Cr and Ni, under similar conditions and a linear correlation between the fractal dimension and the magneton number was discovered. A new fractal structure, i.e. the discontinuously branching tree morphology (DBTM), was formed by interfacial mixing of AgCo/NaCl layered samples. The DBTM patterns emerging in AgCo films consisted of many NaCl single crystals and shared some common features with the Lattice Animals, e.g. the dimension was around 1.59. A semiquantitative analysis was completed to interpret that the fractal dimension increased with increasing ion dose. (orig.).

  16. Growth and Morphology of Rod Eutectics

    Energy Technology Data Exchange (ETDEWEB)

    Jing Teng; Shan Liu; R. Trivedi

    2008-03-17

    The formation of rod eutectic microstructure is investigated systematically in a succinonitrile-camphor alloy of eutectic composition by using the directional solidification technique. A new rod eutectic configuration is observed in which the rods form with elliptical cylindrical shape. Two different orientations of the ellipse are observed that differ by a 90{sup o} rotation such that the major and the minor axes are interchanged. Critical experiments in thin samples, where a single layer of rods forms, show that the spacing and orientation of the elliptic rods are governed by the growth rate and the sample thickness. In thicker samples, multi layers of rods form with circular cross-section and the scaling law between the spacing and velocity predicted by the Jackson and Hunt model is validated. A theoretical model is developed for a two-dimensional array of elliptical rods that are arranged in a hexagonal or a square array, and the results are shown to be consistent with the experimental observations. The model of elliptic rods is also shown to reduce to that for the circular rod eutectic when the lengths of the two axes are equal, and to the lamellar eutectic model when one of the axes is much larger than the other one.

  17. Characteristics of the electrical response of YBCO films with different morphologies to optical irradiation

    International Nuclear Information System (INIS)

    Frack, E.K.; Madhavrao, L.; Patl, R.; Drake, R.E.; Radparvar, M.

    1991-01-01

    The authors have fabricated YBCO films of varying thicknesses (300 Angstrom - 3000 Angstrom) and morphologies, and measured their electrical response to optical radiation. This paper reports on these measurements, emphasizing the dependence on temperature, light chopping frequency, and cryogenic environment. The temperature dependence of the film resistance is determined in part by the film morphology. This morphology may be represented by a simple model consisting of a two-dimensional array of coupled grains. The magnitude of the bolometric response correlates as expected with the sharpness of the superconducting transition. The increased response observed at lower temperatures (non-equilibrium) correlates with the temperature dependence of the resistance above the transition

  18. Oxygen-induced giant grain growth in Ag films

    Science.gov (United States)

    Birnbaum, A. J.; Thompson, C. V.; Steuben, J. C.; Iliopoulos, A. P.; Michopoulos, J. G.

    2017-10-01

    Thin film crystallites typically exhibit normal or abnormal growth with maximum grain size limited by energetic and geometric constraints. Although epitaxial methods have been used to produce large single crystal regions, they impose limitations that preclude some compelling applications. The generation of giant grain thin film materials has broad implications for fundamental property analysis and applications. This work details the production of giant grains in Ag films (2.5 μm-thick), ranging in size from ≈50 μm to 1 mm, on silicon nitride films upon silicon substrates. The presence of oxygen during film deposition plays a critical role in controlling grain size and orientation.

  19. Growth of superconducting tantalum films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Scherschel, M. (Lab. fuer Festkoerperphysik, ETH-Hoenggerberg, Zuerich (Switzerland) Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Finkbeiner, F. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Zhao, S.P. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Jaggi, A. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Maier, T. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Lerch, P. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Zehnder, A. (Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland)); Ott, H.R. (Lab. fuer Festkoerperphysik, ETH-Hoenggerberg, Zuerich (Switzerland) Paul Scherrer Inst., Solid State Div. F3, Villigen (Switzerland))

    1994-02-01

    Pulsed laser deposition (PLD) was used to grow superconducting Ta-films with critical temperatures close to bulk values (4.5 K) on sapphire substrates. Results are compared with films grown by e-beam evaporation. The PLD method allows the growth of superconducting Ta-films on substrates kept at ambient temperature but film surfaces are plagued by sub-micron particles. On the other hand, e-beam evaporation results in smooth surfaces but requires a substrate temperature of the order of 400 C for producing high-quality superconducting films. Critical temperatures, residual resistance ratios, and crystal structure are presented. (orig.)

  20. Effect of interface on surface morphology and proton conduction of polymer electrolyte thin films.

    Science.gov (United States)

    Ohira, Akihiro; Kuroda, Seiichi; Mohamed, Hamdy F M; Tavernier, Bruno

    2013-07-21

    To understand the relationship between surface morphology and proton conduction of polymer electrolyte thin films, perfluorinated ionomer Nafion® thin films were prepared on different substrates such as glassy carbon (GC), hydrophilic-GC (H-GC), and platinum (Pt) as models for the ionomer film within a catalyst layer. Atomic force microscopy coupled with an electrochemical (e-AFM) technique revealed that proton conduction decreased with film thickness; an abrupt decrease in proton conductance was observed when the film thickness was less than ca. 10 nm on GC substrates in addition to a significant change in surface morphology. Furthermore, thin films prepared on H-GC substrates with UV-ozone treatment exhibited higher proton conduction than those on untreated GC substrates. However, Pt substrates exhibited proton conduction comparable to that of GCs for films thicker than 20 nm; a decrease in proton conduction was observed at ∼5 nm thick film but was still much higher than for carbon substrates. These results indicate that the number of active proton-conductive pathways and/or the connectivity of the proton path network changed with film thickness. The surface morphology of thinner films was significantly affected by the film/substrate interface and was fundamentally different from that of the bulk thick membrane.

  1. Growth and characterization of ZnO thin films prepared by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

    2006-06-15

    ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

  2. Growth, yield and fiber morphology of kenaf ( Hibiscus cannabinus L ...

    African Journals Online (AJOL)

    The effects of carbon levels on plant growth, yield and fiber morphological properties are not available for kenaf that is considered as a potential source of low cost natural fiber and feedstock for energy production as well. A pot-culture experiment was conducted in shade house to determine the effects of carbon levels on ...

  3. Effect of yoghurt waste on gut morphology and growth performance ...

    African Journals Online (AJOL)

    The experiment was carried out to determine the effect of yoghurt waste on intestinal morphology and growth performance of pigs weaned at 7 weeks of age. A total of 20 weaned pigs (15.6 ± 2kg, initial body weight {BW}) were randomly assigned in groups of four, to 5 experimental treatments in a randomized block design.

  4. Influence of growth temperature on morphological, structural and ...

    Indian Academy of Sciences (India)

    Influence of growth temperature on morphological, structural and photoluminescence properties of ZnO nanostructure thin layers and powders deposited by thermal evaporation. YASER ARJMAND and HOSEIN ESHGHI. ∗. Department of Physics, University of Shahrood, Shahrood 36155-316, Iran. MS received 9 April ...

  5. Influence of growth temperature on morphological, structural and ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 37; Issue 7. Influence of growth temperature on morphological, structural and photoluminescence properties of ZnO nanostructure thin layers and powders deposited by thermal evaporation. Yaser Arjmand Hosein Eshghi. Volume 37 Issue 7 December 2014 pp 1663- ...

  6. Surface structure deduced differences of copper foil and film for graphene CVD growth

    International Nuclear Information System (INIS)

    Tian, Junjun; Hu, Baoshan; Wei, Zidong; Jin, Yan; Luo, Zhengtang; Xia, Meirong; Pan, Qingjiang; Liu, Yunling

    2014-01-01

    Highlights: • We demonstrate the significant differences between Cu foil and film in the surface morphology and crystal orientation distribution. • The different surface structure leads to the distinctive influences of the CH 4 and H 2 concentrations on the thickness and quality of as-grown graphene. • Nucleation densities and growth rate differences at the initial growth stages on the Cu foil and film were investigated and discussed. - Abstract: Graphene was synthesized on Cu foil and film by atmospheric pressure chemical vapor deposition (CVD) with CH 4 as carbon source. Electron backscattered scattering diffraction (EBSD) characterization demonstrates that the Cu foil surface after the H 2 -assisted pre-annealing was almost composed of Cu(1 0 0) crystal facet with larger grain size of ∼100 μm; meanwhile, the Cu film surface involved a variety of crystal facets of Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0), with the relatively small grain size of ∼10 μm. The different surface structure led to the distinctive influences of the CH 4 and H 2 concentrations on the thickness and quality of as-grown graphene. Further data demonstrate that the Cu foil enabled more nucleation densities and faster growth rates at the initial growth stages than the Cu film. Our results are beneficial for understanding the relationship between the metal surface structure and graphene CVD growth

  7. Mechanical, barrier and morphological properties of starch nanocrystals-reinforced pea starch films.

    Science.gov (United States)

    Li, Xiaojing; Qiu, Chao; Ji, Na; Sun, Cuixia; Xiong, Liu; Sun, Qingjie

    2015-05-05

    To characterize the pea starch films reinforced with waxy maize starch nanocrystals, the mechanical, water vapor barrier and morphological properties of the composite films were investigated. The addition of starch nanocrystals increased the tensile strength of the composite films, and the value of tensile strength of the composite films was highest when starch nanocrystals content was 5% (w/w). The moisture content (%), water vapor permeability, and water-vapor transmission rate of the composite films significantly decreased as starch nanocrystals content increased. When their starch nanocrystals content was 1-5%, the starch nanocrystals dispersed homogeneously in the composite films, resulting in a relatively smooth and compact film surface and better thermal stability. However, when starch nanocrystals content was more than 7%, the starch nanocrystals began to aggregate, which resulted in the surface of the composite films developing a longitudinal fibrous structure. Copyright © 2014 Elsevier Ltd. All rights reserved.

  8. Structural and morphological modifications of polymer thin film in the presence of nonsolvent

    Energy Technology Data Exchange (ETDEWEB)

    Talukdar, Hrishikesh, E-mail: hiasst@yahoo.in; Kundu, Sarathi [Physical Sciences Division, Institute of Advanced Study in Science and Technology, Vigyan Path, Paschim Boragaon, Garchuk, Guwahati, Assam 781035 (India)

    2016-05-23

    Thin films of sodium poly(acrylic acid) salt (Na-PAA) have been investigated to obtain the modification of the out-of-plane structure and surface morphology in the presence of toluene which is considered as nonsolvent for Na-PAA. X-ray reflectivity analysis show that the out-of-plane thickness of the Na-PAA film increases if the film is kept for longer time inside the toluene. For the thicker film the effect of toluene is more pronounced than the thinner one. Surface morphology obtained from the atomic force microscopy shows that the top surface becomes relatively rough after the dipping of the Na-PAA film inside toluene. Although toluene is nonsolvent for Na-PAA molecules, however, the effect of restructuring of the nanometer-thick polymer film cannot be ignored. The reason for such structural modification has been proposed.

  9. Structural and morphological modifications of polymer thin film in the presence of nonsolvent

    Science.gov (United States)

    Talukdar, Hrishikesh; Kundu, Sarathi

    2016-05-01

    Thin films of sodium poly(acrylic acid) salt (Na-PAA) have been investigated to obtain the modification of the out-of-plane structure and surface morphology in the presence of toluene which is considered as nonsolvent for Na-PAA. X-ray reflectivity analysis show that the out-of-plane thickness of the Na-PAA film increases if the film is kept for longer time inside the toluene. For the thicker film the effect of toluene is more pronounced than the thinner one. Surface morphology obtained from the atomic force microscopy shows that the top surface becomes relatively rough after the dipping of the Na-PAA film inside toluene. Although toluene is nonsolvent for Na-PAA molecules, however, the effect of restructuring of the nanometer-thick polymer film cannot be ignored. The reason for such structural modification has been proposed.

  10. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical va- pour deposition using an adducted β-diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures (~ 550°C), while they grow with a strong (111) orientation as the.

  11. Effect of droplet morphology on growth dynamics and heat transfer during condensation on superhydrophobic nanostructured surfaces.

    Science.gov (United States)

    Miljkovic, Nenad; Enright, Ryan; Wang, Evelyn N

    2012-02-28

    Condensation on superhydrophobic nanostructured surfaces offers new opportunities for enhanced energy conversion, efficient water harvesting, and high performance thermal management. These surfaces are designed to be Cassie stable and favor the formation of suspended droplets on top of the nanostructures as compared to partially wetting droplets which locally wet the base of the nanostructures. These suspended droplets promise minimal contact line pinning and promote passive droplet shedding at sizes smaller than the characteristic capillary length. However, the gas films underneath such droplets may significantly hinder the overall heat and mass transfer performance. We investigated droplet growth dynamics on superhydrophobic nanostructured surfaces to elucidate the importance of droplet morphology on heat and mass transfer. By taking advantage of well-controlled functionalized silicon nanopillars, we observed the growth and shedding behavior of suspended and partially wetting droplets on the same surface during condensation. Environmental scanning electron microscopy was used to demonstrate that initial droplet growth rates of partially wetting droplets were 6× larger than that of suspended droplets. We subsequently developed a droplet growth model to explain the experimental results and showed that partially wetting droplets had 4-6× higher heat transfer rates than that of suspended droplets. On the basis of these findings, the overall performance enhancement created by surface nanostructuring was examined in comparison to a flat hydrophobic surface. We showed these nanostructured surfaces had 56% heat flux enhancement for partially wetting droplet morphologies and 71% heat flux degradation for suspended morphologies in comparison to flat hydrophobic surfaces. This study provides insights into the previously unidentified role of droplet wetting morphology on growth rate, as well as the need to design Cassie stable nanostructured surfaces with tailored droplet

  12. Simple morphological control of ZnPc thin films grown on subpc underlayer

    International Nuclear Information System (INIS)

    Park, Da Som; Yim, Sang Gyu

    2015-01-01

    Morphological templating in molecular double-layer thin films, i.e., the phenomenon where the surface morphology of the top layer is strongly influenced by that of the underlying layer, was investigated to control the surface nanomorphology of zinc phthalocyanine (ZnPc) thin films. Three types of molecular thin films, ZnPc single-layer, chloro[subphthalocyaninato]boron(III) (SubPc) single-layer, and ZnPc on SubPc (SubPc/ZnPc) double-layer thin films were grown on glass substrates and post-annealed at 250 °C. While the changes in surface roughness and morphology of the ZnPc single layer were negligible during post-annealing, the roughness of the SubPc/ZnPc double layer significantly increased, similar to that of the SubPc single-layer film. However, the lateral size of the surface crystallites of the SubPc/ZnPc film did not change apparently. Consequently, the fabricated regular, nanopillar-like surface morphology obtained by this simple treatment is expected to provide desirable interdigitated donor–acceptor interface with large contact area for small-molecule organic photovoltaic device applications. In addition, the ZnPc and SubPc single-layer thin films showed absorption maxima in different spectral regions; hence, the double-layer film absorbed the incident light effectively in a broader spectral range

  13. Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Zhou Kai

    2010-01-01

    Full Text Available Abstract The structure of vertically aligned carbon nanotubes (CNTs severely depends on the properties of pre-prepared catalyst films. Aiming for the preparation of precisely controlled catalyst film, atomic layer deposition (ALD was employed to deposit uniform Fe2O3 film for the growth of CNT arrays on planar substrate surfaces as well as the curved ones. Iron acetylacetonate and ozone were introduced into the reactor alternately as precursors to realize the formation of catalyst films. By varying the deposition cycles, uniform and smooth Fe2O3 catalyst films with different thicknesses were obtained on Si/SiO2 substrate, which supported the growth of highly oriented few-walled CNT arrays. Utilizing the advantage of ALD process in coating non-planar surfaces, uniform catalyst films can also be successfully deposited onto quartz fibers. Aligned few-walled CNTs can be grafted on the quartz fibers, and they self-organized into a leaf-shaped structure due to the curved surface morphology. The growth of aligned CNTs on non-planar surfaces holds promise in constructing hierarchical CNT architectures in future.

  14. Scaling of elongation transition thickness during thin-film growth on weakly interacting substrates

    Science.gov (United States)

    Lü, B.; Souqui, L.; Elofsson, V.; Sarakinos, K.

    2017-08-01

    The elongation transition thickness ( θElong) is a central concept in the theoretical description of thin-film growth dynamics on weakly interacting substrates via scaling relations of θElong with respect to rates of key atomistic film-forming processes. To date, these scaling laws have only been confirmed quantitatively by simulations, while experimental proof has been left ambiguous as it has not been possible to measure θElong. Here, we present a method for determining experimentally θElong for Ag films growing on amorphous SiO2: an archetypical weakly interacting film/substrate system. Our results confirm the theoretically predicted θElong scaling behavior, which then allow us to calculate the rates of adatom diffusion and island coalescence completion, in good agreement with the literature. The methodology presented herein casts the foundation for studying growth dynamics and cataloging atomistic-process rates for a wide range of weakly interacting film/substrate systems. This may provide insights into directed growth of metal films with a well-controlled morphology and interfacial structure on 2D crystals—including graphene and MoS2—for catalytic and nanoelectronic applications.

  15. Edge Effects on Growth of Ordered Stress Relief Patterns in Free Sustained Aluminum Films

    International Nuclear Information System (INIS)

    Sen-Jiang, Yu; Miao-Gen, Chen; Yong-Ju, Zhang

    2010-01-01

    An unusual form of ordered stress relief patterns is observed in a nearly free sustained aluminum film system deposited on liquid substrates by the thermal evaporation method. The edge effects on the growth of the ordered patterns are systematically studied. It is found that the patterns initiate from the film edges, preexisting ordered patterns, or other imperfections of the film. When the patterns extend in the film regions, they decay gradually and finally disappear. If they develop along the boundaries, however, the sizes are almost unchanged over several millimeters. The stress relief patterns look like rectangular waves in appearance, which are proven to evolve from sinusoidal to triangular waves gradually. The morphological evolution can be well explained by the general theory of buckling of plates. (condensed matter: structure, mechanical and thermal properties)

  16. Morphological, mechanical, barrier and properties of films based on acetylated starch and cellulose from barley.

    Science.gov (United States)

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Biduski, Bárbara; Evangelho, Jarine Amaral do; Bruni, Graziella Pinheiro; Antunes, Mariana Dias; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2017-01-01

    Biodegradable films of native or acetylated starches with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. The tensile strength of the acetylated starch film was lower than those of the native starch film, without fibers. The addition of fibers increased the tensile strength and decreased the elongation and the moisture of native and acetylated starches films. The acetylated starch film showed higher water solubility when compared to native starch film. The addition of cellulose fibers reduced the water solubility of the acetylated starch film. The films reinforced with cellulose fiber exhibited a higher initial decomposition temperature and thermal stability. The mechanical, barrier, solubility, and thermal properties are factors which direct the type of the film application in packaging for food products. The films elaborated with acetylated starches of low degree of substitution were not effective in a reduction of the water vapor permeability. The addition of the cellulose fiber in acetylated and native starches films can contribute to the development of more resistant films to be applied in food systems that need to maintain their integrity. © 2016 Society of Chemical Industry. © 2016 Society of Chemical Industry.

  17. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  18. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Science.gov (United States)

    Solís-Pomar, Francisco; Martínez, Eduardo; Meléndrez, Manuel F.; Pérez-Tijerina, Eduardo

    2011-09-01

    A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells.

  19. Structural and morphological characterization of CdSe:Mn thin films

    Indian Academy of Sciences (India)

    Sarika Singh

    2017-06-24

    Jun 24, 2017 ... C. The annealed samples were subjected to morphological and structural characterization using scanning electron microscope and XRD. XRD was used for structural characterization whereas scanning electron microscope shows the surface morphology of the films. XRD spectra reveal that the grown ...

  20. Growth and Dissolution of Iron and Manganese Oxide Films

    Energy Technology Data Exchange (ETDEWEB)

    Scot T. Martin

    2008-12-22

    Growth and dissolution of Fe and Mn oxide films are key regulators of the fate and transport of heavy metals in the environment, especially during changing seasonal conditions of pH and dissolved oxygen. The Fe and Mn are present at much higher concentrations than the heavy metals, and, when Fe and Mn precipitate as oxide films, heavy metals surface adsorb or co-precipitate and are thus essentially immobilized. Conversely, when the Fe and Mn oxide films dissolve, the heavy metals are released to aqueous solution and are thus mobilized for transport. Therefore, understanding the dynamics and properties of Fe and Mn oxide films and thus on the uptake and release of heavy metals is critically important to any attempt to develop mechanistic, quantitative models of the fate, transport, and bioavailablity of heavy metals. A primary capability developed in our earlier work was the ability to grow manganese oxide (MnO{sub x}) films on rhodochrosite (MnCO{sub 3}) substrate in presence of dissolved oxygen under mild alkaline conditions. The morphology of the films was characterized using contact-mode atomic force microscopy. The initial growth began by heteroepitaxial nucleation. The resulting films had maximum heights of 1.5 to 2 nm as a result of thermodynamic constraints. Over the three past years, we have investigated the effects of MnO{sub x} growth on the interactions of MnCO{sub 3} with charged ions and microorganisms, as regulated by the surface electrical properties of the mineral. In 2006, we demonstrated that MnO{sub x} growth could induce interfacial repulsion and surface adhesion on the otherwise neutral MnCO{sub 3} substrate under environmental conditions. Using force-volume microscopy (FVM), we measured the interfacial and adhesive forces on a MnO{sub x}/MnCO{sub 3} surface with a negatively charged silicon nitride tip in a 10-mM NaNO3 solution at pH 7.4. The interfacial force and surface adhesion of MnOx were approximately 40 pN and 600 pN, respectively

  1. Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique

    Science.gov (United States)

    Du, Wenhan; Yang, Jingjing; Xiong, Chao; Zhao, Yu; Zhu, Xifang

    2017-07-01

    In order to improve the photoelectric transformation efficiency of thin-film solar cells, one plausible method was to improve the transparent conductive oxides (TCO) material property. In-doped tin oxide (ITO) was an important TCO material which was used as a front contact layer in thin-film solar cell. Using magnetron sputtering deposition technique, we prepared preferential orientation ITO thin films on quartz substrate. XRD and SEM measurements were used to characterize the crystalline structure and morphology of ITO thin films. The key step was adding a ZnO thin film buffer layer before ITO deposition. ZnO thin film buffer layer increases the nucleation center numbers and results in the (222) preferential orientation growth of ITO thin films.

  2. Morphological characterization of Langmuir-Blodgett films from polyaniline and a ruthenium complex (Rupy): influence of the relative concentration of Rupy

    International Nuclear Information System (INIS)

    Souza, Nara C de; Ferreira, Marystela; Wohnrath, Karen; Silva, Josmary R; Oliveira Osvaldo, N Jr; Giacometti, Jose A

    2007-01-01

    We report on the use of dynamic scale theory and fractal analyses in a study of the growth stages of Langmuir-Blodgett (LB) films of polyaniline and a neutral biphosphinic ruthenium complex, namely mer-[RuCl 3 (dppb)(py)] (dppb = 1,4-bis(diphenylphosphine)buthane, py = pyridine), Rupy. The LB films were deposited onto indium-tin-oxide substrates and characterized with atomic force microscopy. From the granular morphology exhibited by the films one could infer growth processes inside and outside the grains. Growth outside was found to follow the Kardar-Parisi-Zhang model, with fractal dimensions of about 2.7. As one would expect, inside the grains the morphology is close to a Euclidian surface with fractal dimension of about 2

  3. Low-temperature growth of nanostructured diamond films.

    Science.gov (United States)

    Baker, P A; Catledge, S A; Vohra, Y K

    2001-03-01

    Nanostructured diamond films are grown on a titanium alloy substrate using a two-step deposition process. The first step is performed at elevated temperature (820 degrees C) for 30 min using a H2/CH4/N2 gas mixture to grow a thin (approximately 600 nm) nanostructured diamond layer and to improve film adhesion. The remainder of the deposition involves growth at low temperature (diamond film growth during low-temperature deposition is confirmed by in situ laser reflectance interferometry, atomic force microscopy, micro-Raman spectroscopy, and surface profilometry. Similar experiments performed without the initial nanostructured diamond layer resulted in poorly adhered films with a more crystalline appearance and a higher surface roughness. This low-temperature deposition of nanostructured diamond films on metals offers advantages in cases where high residual thermal stress leads to delamination at high temperatures.

  4. Composition and growth procedure-dependent properties of electrodeposited CuInSe 2 thin films

    Science.gov (United States)

    Babu, S. Moorthy; Ennaoui, A.; Lux-Steiner, M. Ch.

    2005-02-01

    CuInSe 2 thin films were deposited on molybdenum-coated glass substrates by electrodeposition. Deposition was carried out with a variety of electrochemical bath compositions. The quality of the deposits depends very much on the source materials as well as the concentration of the same in the electrolyte. The deposition potential was varied from -0.4 to -0.75 V vs. SCE. The pH of the solution was adjusted to 1.5-2 using diluted sulphuric acid. Chloride salts containing bath yield good surface morphology, but there is always excess of the metallic content in the deposited films. Different growth procedures, like initial metallic layers of copper or indium, layers of copper selenide or indium selenide before the actual deposition of ternary chalcopyrite layers were attempted. Fabrication pathway, morphological and compositional changes due to the different precursor route has been analysed. The quality of the deposits prepared by one-step electrodeposition is better than the deposits with a two-stage process. The deposited films were characterized with XRD, SEM-EDAX, UV-visible spectroscopy and I- V characteristics. The deposited films were annealed in air as well as in nitrogen atmosphere. The influence of annealing temperature, environment and annealing time on the properties of the films are evaluated. Attempts were made to fabricate solar cell structure from the deposited absorber films. The structure of Mo/CuInSe 2/CdS/ZnO/Ni was characterized with surface, optical and electrical studies.

  5. An AFM study of the morphology and local mechanical properties of superconducting YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Soifer, Ya.M.; Verdyan, A.; Azoulay, J.; Kazakevich, M.; Rabkin, E

    2004-02-01

    The morphology of thin superconducting YBCO films deposited on sapphire and on SrTiO{sub 3} was studied with the help of atomic force and scanning electron microscopies. The intrinsic mechanical properties in the flat, particles-free and chemically homogeneous regions of the films were determined with the aid of nanoindenting atomic force microscope. Also the microscopy studies revealed the difference in topography of the films, the nanohardness and Young's modulus of two films were very close to each other. For the indents shallower than 0.2 of the film thickness the Young's modulus and hardness of the films on two different substrates converged to the values of 210 and 8.5 GPa, respectively. The possible deformation mechanisms determining the localized deformation of intrinsically brittle ceramic films are discussed.

  6. Tuning the morphology of metastable MnS films by simple chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Dhandayuthapani, T. [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Girish, M. [Department of Physics, Alagappa University, Karaikudi 630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630004 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600025 (India)

    2015-10-30

    Graphical abstract: - Highlights: • MnS films with diverse morphological features were prepared without any complexing agent. • The change in morphology of MnS films may be due to the “oriented aggregation”. • The dual role (as sulfur source and structure directing agent) of thiourea was observed. • Sulfur source concentration induced enhancement in the crystallization of films. - Abstract: In the present investigation, we have prepared the spherical particles, almond-like, and cauliflower-like morphological structures of metastable MnS films on glass substrate by chemical bath deposition technique at low temperature without using any complexing or chelating agent. The morphological change of MnS films with molar ratio may be due to the oriented aggregation of adjacent particles. The compositional purity of deposited film was confirmed by the EDAX study. X-ray diffraction and micro-Raman studies confirm the sulfur source concentration induced enhancement in the crystallization of films with metastable MnS phase (zinc-blende β-MnS, and wurtzite γ-MnS). The shift in PL emission peak with molar ratio may be due to the change in optical energy band gap of the MnS, which was further confirmed by the optical absorbance study. The paramagnetic behavior of the sample was confirmed by the M–H plot.

  7. Optical properties of organic semiconductor thin films. Static spectra and real-time growth studies

    Energy Technology Data Exchange (ETDEWEB)

    Heinemeyer, Ute

    2009-07-20

    The aim of this work was to establish the anisotropic dielectric function of organic thin films on silicon covered with native oxide and to study their optical properties during film growth. While the work focuses mainly on the optical properties of Diindenoperylene (DIP) films, also the optical response of Pentacene (PEN) films during growth is studied for comparison. Spectroscopic ellipsometry and differential reflectance spectroscopy are used to determine the dielectric function of the films ex-situ and in-situ, i.e. in air and in ultrahigh vacuum. Additionally, Raman- and fluorescence spectroscopy is utilized to characterize the DIP films serving also as a basis for spatially resolved optical measurements beyond the diffraction limit. Furthermore, X-ray reflectometry and atomic force microscopy are used to determine important structural and morphological film properties. The absorption spectrum of DIP in solution serves as a monomer reference. The observed vibronic progression of the HOMO-LUMO transition allows the determination of the Huang-Rhys parameter experimentally, which is a measure of the electronic vibrational coupling. The corresponding breathing modes are measured by Raman spectroscopy. The optical properties of DIP films on native oxide show significant differences compared to the monomer spectrum due to intermolecular interactions. First of all, the thin film spectra are highly anisotropic due to the structural order of the films. Furthermore the Frenkel exciton transfer is studied and the energy difference between Frenkel and charge transfer excitons is determined. Real-time measurements reveal optical differences between interfacial or surface molecules and bulk molecules that play an important role for device applications. They are not only performed for DIP films but also for PEN films. While for DIP films on glass the appearance of a new mode is visible, the spectra of PEN show a pronounced energy red-shift during growth. It is shown how the

  8. Domain morphology in ultrathin ferromagnetic films with perpendicular magnetization

    Energy Technology Data Exchange (ETDEWEB)

    Kaplan, B. [Department of Secondary Science and Mathematics Education, University of Mersin, Yenisehir Campus, 33169 Mersin (Turkey)]. E-mail: bengukaplan@yahoo.com

    2006-03-15

    We determine the minimal domain structure for the equilibrium thickness of stripes as well as for the minimal energy of the domain configuration in ultrathin films of ferromagnetically coupled spins, where the easy direction of magnetization is perpendicular to the film. It is found that the equilibrium thickness of stripes and walls depend on the exchange energy. The normalized anisotropy, f, depends on interplay between the magnetic and anisotropy energies and is almost independent of the exchange energy inside the wall. The results are compared with the experimental data for thin Ag/Fe/Ag (0 0 1) films and a good coincidence is obtained between both results.

  9. Characteristic morphological and frictional changes in sputtered MoS/sub 2 films

    Science.gov (United States)

    Spalvins, T.

    1984-01-01

    Three microstructural growth stages of sputtered MoS2 films were identified with respect to film thickness: (1) ridge formation during nucleation, (2) an equiaxed transition zone, and (3) a columnar-fiber-like structure. Each of these growth stages are characterized in terms of microcrystallite size, shape, and orientation. The effective lubricating film thickness is established in terms of the microstructural growth stages during sliding experiments. The film has a tendency to break up within the columnar zone. Actual lubrication is performed by the remaining film which is 0.18 to 0.22 microns thick. Also a visual screening is proposed to evaluate the integrity of the as-sputtered MoS2 film. The lubricating properties are identified with respect to optical changes before and after wiping. The orientation of the microcrystallites are responsible for the optical reflective changes observed.

  10. Corrosion resistance and biocompatibility of zirconium oxynitride thin film growth by RF sputtering

    International Nuclear Information System (INIS)

    Cubillos, G. I.; Olaya, J. J.; Clavijo, D.; Alfonso, J. E.; Bethencourt, M.

    2012-01-01

    Thin films of zirconium oxynitride were grown on common glass, silicon (100) and stainless steel 316 L substrates using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (Sem) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The corrosion resistance studies were made on samples of stainless steel 316 L coated and uncoated with Zr x N y O films, through of polarization curves. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316 L through proliferation and cellular adhesion. The XRD analysis shows that films deposited at 623 K, with a flow ratio ΦN 2 /ΦO 2 of 1.25 and a total deposit time of 30 minutes grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The Sem analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. The analysis of the corrosion resistant, shows that the stainless steel coated with the film was increased a factor 10. Finally; through the analysis of the biocompatibility we established that the films have a better surface than the substrate (stainless steel 316 L) in terms of the adhesion and proliferation of bone cells. (Author)

  11. Corrosion resistance and biocompatibility of zirconium oxynitride thin film growth by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G. I.; Olaya, J. J.; Clavijo, D.; Alfonso, J. E. [Universidad Nacional de Colombia, Carrera 45 No. 26-85, AA 14490 Bogota D. C. (Colombia); Bethencourt, M., E-mail: jealfonsoo@unal.edu.co [Universidad de Cadiz, Centro Andaluz de Ciencia y Tecnologia Marinas, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Av. Republica de Saharaui, Puerto Real, E-11510 Cadiz (Spain)

    2012-07-01

    Thin films of zirconium oxynitride were grown on common glass, silicon (100) and stainless steel 316 L substrates using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (Sem) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The corrosion resistance studies were made on samples of stainless steel 316 L coated and uncoated with Zr{sub x}N{sub y}O films, through of polarization curves. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316 L through proliferation and cellular adhesion. The XRD analysis shows that films deposited at 623 K, with a flow ratio {Phi}N{sub 2}/{Phi}O{sub 2} of 1.25 and a total deposit time of 30 minutes grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The Sem analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. The analysis of the corrosion resistant, shows that the stainless steel coated with the film was increased a factor 10. Finally; through the analysis of the biocompatibility we established that the films have a better surface than the substrate (stainless steel 316 L) in terms of the adhesion and proliferation of bone cells. (Author)

  12. Nanoscale Morphology of Doctor Bladed versus Spin-Coated Organic Photovoltaic Films

    KAUST Repository

    Pokuri, Balaji Sesha Sarath

    2017-08-17

    Recent advances in efficiency of organic photovoltaics are driven by judicious selection of processing conditions that result in a “desired” morphology. An important theme of morphology research is quantifying the effect of processing conditions on morphology and relating it to device efficiency. State-of-the-art morphology quantification methods provide film-averaged or 2D-projected features that only indirectly correlate with performance, making causal reasoning nontrivial. Accessing the 3D distribution of material, however, provides a means of directly mapping processing to performance. In this paper, two recently developed techniques are integrated—reconstruction of 3D morphology and subsequent conversion into intuitive morphology descriptors —to comprehensively image and quantify morphology. These techniques are applied on films generated by doctor blading and spin coating, additionally investigating the effect of thermal annealing. It is found that morphology of all samples exhibits very high connectivity to electrodes. Not surprisingly, thermal annealing consistently increases the average domain size in the samples, aiding exciton generation. Furthermore, annealing also improves the balance of interfaces, enhancing exciton dissociation. A comparison of morphology descriptors impacting each stage of photophysics (exciton generation, dissociation, and charge transport) reveals that spin-annealed sample exhibits superior morphology-based performance indicators. This suggests substantial room for improvement of blade-based methods (process optimization) for morphology tuning to enhance performance of large area devices.

  13. Mechanical, barrier and morphological properties of pea starch and peanut protein isolate blend films.

    Science.gov (United States)

    Sun, Qingjie; Sun, Cuixia; Xiong, Liu

    2013-10-15

    Mechanical, barrier and morphological properties of edible films based on blends of Pea starch (PS) and Peanut protein isolate (PPI) plasticized with glycerol (30%, w/w) were investigated. As PPI ratio in PS/PPI blends increased, the thickness of films decreased, the opacity slightly elevated and color intensified. The addition of PPI to the PS film significantly reduced tensile strength from 5.44 MPa to 3.06 MPa, but increased elongation from 28.56% to 98.12% with the incorporation of PPI into PS at 50% level. Film solubility value fell from 22.31% to 9.78% upon the incorporation of PPI ranged from 0 to 50% level. When PPI was added into PS film at 40% level, the WVP and WVTR of the films markedly dropped from 11.18% to 4.19% and 6.16 to 1.95%, respectively. Scanning electron microscopy (SEM) of the surface of films showed that many swollen starch granules were presented in the 100% PS film, while 100% PPI film was observed to have rougher surfaces with presence of pores or cavities. The PS/PPI blend films upon the incorporation of PPI at 20% and 50% level were not homogeneous. However, the smoother film surface was observed in PS/PPI blend films with the addition of PPI at 40% level. SEM image of the cross-sections of the films revealed that the 100% PS film showed a uniform and compact matrix without disruption, and pore formation and 100% PPI film displayed a smooth structure. Rougher and flexible network was shown in blend film with the addition of PPI reaching 40% level. Copyright © 2013. Published by Elsevier Ltd.

  14. Physical vapor deposited thin films of lignins extracted from sugar cane bagasse: morphology, electrical properties, and sensing applications.

    Science.gov (United States)

    Volpati, Diogo; Machado, Aislan D; Olivati, Clarissa A; Alves, Neri; Curvelo, Antonio A S; Pasquini, Daniel; Constantino, Carlos J L

    2011-09-12

    The concern related to the environmental degradation and to the exhaustion of natural resources has induced the research on biodegradable materials obtained from renewable sources, which involves fundamental properties and general application. In this context, we have fabricated thin films of lignins, which were extracted from sugar cane bagasse via modified organosolv process using ethanol as organic solvent. The films were made using the vacuum thermal evaporation technique (PVD, physical vapor deposition) grown up to 120 nm. The main objective was to explore basic properties such as electrical and surface morphology and the sensing performance of these lignins as transducers. The PVD film growth was monitored via ultraviolet-visible (UV-vis) absorption spectroscopy and quartz crystal microbalance, revealing a linear relationship between absorbance and film thickness. The 120 nm lignin PVD film morphology presented small aggregates spread all over the film surface on the nanometer scale (atomic force microscopy, AFM) and homogeneous on the micrometer scale (optical microscopy). The PVD films were deposited onto Au interdigitated electrode (IDE) for both electrical characterization and sensing experiments. In the case of electrical characterization, current versus voltage (I vs V) dc measurements were carried out for the Au IDE coated with 120 nm lignin PVD film, leading to a conductivity of 3.6 × 10(-10) S/m. Using impedance spectroscopy, also for the Au IDE coated with the 120 nm lignin PVD film, dielectric constant of 8.0, tan δ of 3.9 × 10(-3), and conductivity of 1.75 × 10(-9) S/m were calculated at 1 kHz. As a proof-of-principle, the application of these lignins as transducers in sensing devices was monitored by both impedance spectroscopy (capacitance vs frequency) and I versus time dc measurements toward aniline vapor (saturated atmosphere). The electrical responses showed that the sensing units are sensible to aniline vapor with the process being

  15. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  16. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

    2015-07-15

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

  17. Films of Transition Metal Complexes Including Ionic Liquids: Dramatic Effects of Processing Parameters and Substrate on the Film Morphology

    Science.gov (United States)

    Bayatpour, Sareh; Isik, Dilek; Santato, Clara

    2018-01-01

    Bis(2-phenylpyridine- C, N)(2,2'-bipyridine- N, N') iridium(III) hexafluorophosphate ([Ir(ppy)2(bpy)][PF6]) is an ionic transition-metal complex (iTMC) of interest for use in light-emitting electrochemical cells (LEECs). Films of [Ir(ppy)2(bpy)][PF6] blended with the ionic liquid 1-butyl-3-methylimidazolium hexafluorophosphate ([BMIm][PF6]), deposited on different substrates, have been investigated for their morphological features, which are expected to affect the functional properties of the films, e.g., charge carrier transport. In literature, ionic liquids have been included in films of transition-metal complexes (TMCs) to increase the ion mobility and improve the performance of LEECs. A systematic comparison between the morphology of pure [Ir(ppy)2(bpy)][PF6] films and [Ir(ppy)2(bpy)][PF6] films containing [BMIm][PF6] has been carried out on different types of substrate, namely Au-patterned SiO2, indium tin oxide (ITO), and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)-modified ITO. Although [Ir(ppy)2(bpy)][PF6] forms smooth films on SiO2, ITO, and PEDOT:PSS-modified ITO substrates, addition of [BMIm][PF6] caused formation of vertical, discontinuous aggregates, which are expected to be detrimental to charge transport in LEECs with planar architecture.

  18. Controlled Growth of Conductive AlN Thin Films by Plasma-Assisted Reactive Evaporation

    Science.gov (United States)

    Alizadeh, M.; Goh, B. T.; Rahman, S. A.

    2017-07-01

    In this work, the growth of conductive AlN thin films by plasma-assisted reactive evaporation at different filament-to-substrate distances was presented and discussed. The elemental composition, surface morphology, structural, optical, and electrical properties of the films were examined by energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy, grazing incidence X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), optical measurement, and current-voltage ( I- V) characterizations. The electrical study revealed that the films are conductive, as ohmic conductivity was observed from I- V results. The GIXRD results of AlN thin films showed that by decreasing the distance, the intensity of the peak corresponding to metallic Al decreases while that of AlN increases. EDX and XPS results indicated that at shorter distances, the incorporation of N into the AlN films is enhanced. This was further confirmed by FTIR results, which showed that the incorporation of Al-N bonds in the grown AlN films was enhanced by decreasing the distance. It was shown that the optical absorption edge of the grown films shifts from the near-ultraviolet (UV) region to far-UV as the distance is decreased.

  19. Monolithic growth of partly cured polydimethylsiloxane thin film layers

    DEFF Research Database (Denmark)

    Yu, Liyun; Skov, Anne Ladegaard

    2014-01-01

    at different curing times. The monolithic films are investigated by rheology, scanning electron microscope, mechanical testing, dielectric relaxation spectroscopy, thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC). The morphology, mechanical and dielectric properties, as well...... to enable interlayer crosslinking reactions either by application of an adhesion promoter or by ensuring that there are reactive, complementary sites available on the two surfaces. Polydimethylsiloxane (PDMS) is a widely used polymer for DEAPs. In this work, two-layered PDMS films are adhered together...... as thermal stabilities of the bilayer elastomer films are observed to change with the curing time of the monolayers before lamination. The objective of this work is to create adhesion of two layers without destroying the original viscoelastic properties of the PDMS films, and hence enable, for example...

  20. Structural, morphological and Raman studies of pulse electrosynthesised indium antimonide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Chandel, Tarun; Rajaram, P. [School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)

    2015-08-28

    InSb films deposited on fluorine doped tin oxide (FTO) substrates by a pulse elctrodeposition technique. The deposition was carried out at an applied potential −1.3V versus Ag/AgCl electrode. Structural, morphological and optical studies were performed on the electrodeposited InSb. X-ray diffraction (XRD) studies show that the deposited InSb films are polycrystalline in nature having the zinc blend structure. The crystallite size (D), dislocation density (δ) and strain (ε) were calculated using XRD results. The EDAX analysis shows that chemical composition of In{sup 3+} and Sb{sup 3+} ions is close to the required stoichiometry. The surface morphology of the deposited films was examined using scanning electron microscopy (SEM). SEM studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. However, the crystallite size determined by the Scherrer method shows a size close to 30 nm. Surface morphology studies of the InSb films were also performed using atomic force microscopy (AFM). The average surface roughness as measured by AFM is around 40 nm. Hot probe studies show that all the electrodeposited thin films have n type conductivity and the thickness of the films is calculated using electrochemical formula.

  1. Buckling Morphologies and Interfacial Properties of Silicon Nitride Films Deposited on Float Glass Substrates

    Science.gov (United States)

    Sun, Ya-Dong; Chen, Qi-Xiang; Feng, Yu-Fei; Chen, Jun; Yu, Sen-Jiang

    2015-04-01

    We report on the buckling morphologies and interfacial properties of silicon nitride films deposited on float glass substrates. The coexistence of straight-sided and telephone cord buckles can be observed in the silicon nitride films after annealing at a high temperature. The straight-sided structure is metastable and can spontaneously evolve into the telephone cord structure accompanied by the increase in the buckle width and height. The geometric parameters of various buckling structures (including the straight blister, telephone cord and their transition state) have been measured by optical microscopy and atomic force microscopy (AFM). The internal stress and interfacial adhesion of the films are evaluated and analyzed based on the continuum elastic theory. It is valid to measure the interfacial properties of thin films by simplifying the telephone cord buckle as a straight-sided structure. This measurement technique is suitable for all the film systems provided that the buckles can form in the film.

  2. Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review

    Directory of Open Access Journals (Sweden)

    Theresa P. Ginley

    2016-11-01

    Full Text Available In this article, we will review recent progress in the growth of topological insulator (TI thin films by molecular beam epitaxy (MBE. The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. We close by discussing the bright future for TI film growth by MBE.

  3. Growth dynamics of copper thin film deposited by soft-landing of size selected nanoclusters

    Science.gov (United States)

    Mondal, Shyamal; Chowdhury, Debasree; Barman, Pintu; Bhattacharyya, Satya Ranjan

    2017-12-01

    We investigate surface kinetic roughening of copper films grown on Si(1 0 0) substrates at room temperature by means of atomic force microscopy study. Films were deposited at various durations by soft landing of size selected ( 3 nm) nanoclusters using a state of the art nanocluster deposition system. The film growth exhibits two growth regimes with a crossover time of 40 min. In the first regime, surface morphologies show bimodal distribution and surface roughness shows a linear increase with growth exponent β = 0.14 ± 0.02. In the second regime, the height distribution becomes Gaussian and surface roughness shows a steep rise with high β value 0.83 ± 0.45. On the other hand, the roughness exponent α ranges from 0.68 ± 0.03 to 0.84 ± 0.01 for low to high deposition regimes. Estimated scaling exponent suggests the diffusion of clusters on substrate surface and shadowing effect play dominant role in growth mechanism of the nanostructured thin film. Contribution to the Topical Issue: "Dynamics of Systems at the Nanoscale", edited by Andrey Solov'yov and Andrei Korol.

  4. Growth of cuprate high temperature superconductor thin films

    Directory of Open Access Journals (Sweden)

    H-U Habermeier

    2006-09-01

    Full Text Available   This paper reviews briefly the development of physical vapour deposition based HTS thin film preparation technologies to today’s state-of-the-art methods. It covers the main trends of in-situ process and growth control. The current activities to fabricate tapes for power applications as well as to tailor interfaces in cuprate are described. Some future trends in HTS thin film research, both for science as well as application driven activities are outlined.

  5. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  6. Growth and process conditions of aligned and patternable films of iron(III) oxide nanowires by thermal oxidation of iron

    International Nuclear Information System (INIS)

    Hiralal, P; Unalan, H E; Amaratunga, G A J; Wijayantha, K G U; Kursumovic, A; MacManus-Driscoll, J L; Jefferson, D

    2008-01-01

    A simple, catalyst-free growth method for vertically aligned, highly crystalline iron oxide (α-Fe 2 O 3 ) wires and needles is reported. Wires are grown by the thermal oxidation of iron foils. Growth properties are studied as a function of temperature, growth time and oxygen partial pressure. The size, morphology and density of the nanostructures can be controlled by varying growth temperature and time. Oxygen partial pressure shows no effect on the morphology of resulting nanostructures, although the oxide thickness increases with oxygen partial pressure. Additionally, by using sputtered iron films, the possibility of growth and patterning on a range of different substrates is demonstrated. Growth conditions can be adapted to less tolerant substrates by using lower temperatures and longer growth time. The results provide some insight into the mechanism of growth.

  7. Substrate heater for the growth of epitaxial silicon films

    Science.gov (United States)

    Deming, Matthew; Varhue, Walter; Adams, Edward; Lavoie, Mark

    1999-03-01

    The single wafer processing of epitaxial Si films requires that special attention be paid to the design of the substrate heater assembly. This document describes the evolution and testing of an in situ heater used to deposit epitaxial Si films at temperatures as high as 700 °C. One problem encountered was the production of excessive levels of ultraviolet radiation which contributed to the desorption of water vapor from the vacuum chamber walls during the in situ cleaning process. A second problem involved the formation of a molybdenum containing film that poisoned epitaxial growth. A final proven in situ heater design is presented which avoids these problems.

  8. Relationship between crystal morphology and photoluminescence in polynanocrystalline lead sulfide thin films

    International Nuclear Information System (INIS)

    Kaci, S.; Keffous, A.; Trari, M.; Fellahi, O.; Menari, H.; Manseri, A.; Guerbous, L.

    2010-01-01

    Thin films of lead sulfide (PbS) nanoparticles were grown on corning glass and Si(1 0 0) substrates by polyethylene glycol-assisted chemical bath deposition (CBD) method. This paper compares the morphology and the luminescence properties (PL) of the deposited thin films in the presence (or absence) of PEG300 and investigates the effect of deposition temperatures. Surface morphology and photoluminescence properties of samples were analyzed. The PL data show a blue-shift from the normal emission at ∼2900 nm in PbS bulk to ∼360 nm in nanoparticles of PbS thin films. Furthermore, the PL emission of the films obtained without the addition of PEG300 (type 1) was slightly shifted from that of the films obtained in presence of PEG300 (type 2) from ∼360 to ∼470 nm. The blue-shifting of the emission wavelengths from 2900 to ∼360 or 470 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the shift between the two types of PbS nanoparticles thin films is speculated to be due to an increase in the defect concentration. The blue-shift increased with increase of the deposition temperature, which suggests that there has been a relative depletion in particle sizes during the CBD of the films at higher temperatures. The PbS nanocrystalline thin films obtained in the presence of PEG300 at 60 o C exhibit a high blue luminescence.

  9. Structural and morphological characterization of CdSe:Mn thin films

    Science.gov (United States)

    Singh, Sarika; Shrivastava, A. K.

    2017-07-01

    CdSe:Mn thin films were grown by chemical bath deposition. The pH of the solution was maintained at 11. Dry films so obtained were annealed in vacuum (10^{-1} Torr) for about 2 h at 400°C. The annealed samples were subjected to morphological and structural characterization using scanning electron microscope and XRD. XRD was used for structural characterization whereas scanning electron microscope shows the surface morphology of the films. XRD spectra reveal that the grown CdSe films are polycrystalline in nature and have cubic structure. The average particle size decreases on doping CdSe with Mn ions. The FE-SEM images show spherical particles having uniform distribution. Optical characterization was done using PL studies and UV-Visible spectrophotometer. PL spectra show an increase in PL intensity on doping. Optical band gap also decreases on doping.

  10. Structure and Morphology Control in Thin Films of Conjugated Polymers for an Improved Charge Transport

    Directory of Open Access Journals (Sweden)

    Haiyang Wang

    2013-11-01

    Full Text Available The morphological and structural features of the conjugated polymer films play an important role in the charge transport and the final performance of organic optoelectronics devices [such as organic thin-film transistor (OTFT and organic photovoltaic cell (OPV, etc.] in terms of crystallinity, packing of polymer chains and connection between crystal domains. This review will discuss how the conjugated polymer solidify into, for instance, thin-film structures, and how to control the molecular arrangement of such functional polymer architectures by controlling the polymer chain rigidity, polymer solution aggregation, suitable processing procedures, etc. These basic elements in intrinsic properties and processing strategy described here would be helpful to understand the correlation between morphology and charge transport properties and guide the preparation of efficient functional conjugated polymer films correspondingly.

  11. The effect of organoclay type on morphology and mechanical properties of polypropylene films: comparative study

    International Nuclear Information System (INIS)

    Gama, D.B.; Calado, J.F.; Duarte, I.S.; Silva, S.M.L.; Andrade, D.L.A.C.S.

    2012-01-01

    This paper aims to compare the effect of the type of organoclay on morphological and mechanical properties of polypropylene films. Thus, were employed two organobentonite synthesized by NanoPol/UFCG (APOC and APOCF) and a organo montmorillonite Cloisite 20A (C20A) from Southern Clay Products (Texas/USA). The PP films and the PP/organoclay hybrids were prepared in a ChillRoll extruder - 16 AX Plastics and characterized by X-ray diffraction and mechanical properties. The results indicate that the incorporation of organobentonite (APOC and APOCF) and organo montmorillonite (C20A) resulted in the formation of PP nanocomposites with predominantly intercalated morphologies. Also indicate that the mechanical behavior of the films obtained with the three clays (APOC APOCF and C20A) was similar suggesting that the organobentonite, modified with national technology, raw material of low cost when compared to commercial organo montmorillonite, can be a viable alternative in the preparation of PP films. (author)

  12. Enhancement of carrier mobility in pentacene thin-film transistor on SiO 2 by controlling the initial film growth modes

    Science.gov (United States)

    Qi, Qiong; Yu, Aifang; Jiang, Peng; Jiang, Chao

    2009-02-01

    Pentacene thin-film transistors (TFTs) were fabricated on thermally grown SiO 2 gate insulator under the conditions of various pre-cleaning treatments. Initial nucleation and growth of the material films on treated substrates were observed by atomic force microscope. The performance of fabricated TFT devices with different surface cleaning approaches was found to be highly related to the initial film morphologies. In contrast to the three-dimensional island-like growth mode on SiO 2 under an organic cleaning process, a layer-by-layer initial growth occurred on the SiO 2 insulator cleaned with ammonia solution, which was believed to be the origination of the excellent electrical properties of the TFT device. Field effect mobility of the TFT device could achieve as high as 1.0 cm 2/Vs on the bared SiO 2/Si substrate and the on/off ratio was over 10 6.

  13. Nucleation and Growth of Crystalline Grains in RF-Sputtered TiO2 Films

    Directory of Open Access Journals (Sweden)

    J. C. Johnson

    2009-01-01

    Full Text Available Amorphous TiO2 thin films were radio frequency sputtered onto siliconmonoxide and carbon support films on molybdenum transmission electron microscope (TEM grids and observed during in situ annealing in a TEM heating stage at 250∘C. The evolution of crystallization is consistent with a classical model of homogeneous nucleation and isotropic grain growth. The two-dimensional grain morphology of the TEM foil allowed straightforward recognition of amorphous and crystallized regions of the films, for measurement of crystalline volume fraction and grain number density. By assuming that the kinetic parameters remain constant beyond the onset of crystallization, the final average grain size was computed, using an analytical extrapolation to the fully crystallized state. Electron diffraction reveals a predominance of the anatase crystallographic phase.

  14. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    OpenAIRE

    Waltz, Florian; Schwarz, Hans-Christoph; Schneider, Andreas M; Eiden, Stefanie; Behrens, Peter

    2015-01-01

    Summary In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zin...

  16. Low Temperature Growth of Nanostructured Diamond Films on Metals

    Science.gov (United States)

    Baker, Paul A.; Catledge, Shane A.; Vohra, Yogesh K.

    2001-01-01

    The field of nanocrystalline diamond and tetrahedral amorphous carbon films has been the focus of intense experimental activity in the last few years for applications in field emission display devices, optical windows, and tribological coatings, The choice of substrate used in most studies has typically been silicon. For metals, however, the thermal expansion mismatch between the diamond film and substrate gives rise to thermal stress that often results in delamination of the film. To avoid this problem in conventional CVD deposition low substrate temperatures (less than 700 C) have been used, often with the incorporation of oxygen or carbon monoxide to the feedgas mixture. Conventionally grown CVD diamond films are also rough and would require post-deposition polishing for most applications. Therefore, there is an obvious need to develop techniques for deposition of well-adhered, smooth nano-structured diamond films on metals for various tribological applications. In our work, nanostructured diamond films are grown on a titanium alloy substrate using a two-step deposition process. The first step is performed at elevated temperature (820 C) for 30 minutes using a H2/CH4/N2 gas mixture in order to grow a thin (approx. 600 nm) nanostructured diamond layer and improve film adhesion. The remainder of the deposition involves growth at low temperature (less than 600 C) in a H2/CH4/O2 gas mixture. Laser reflectance Interferometry (LRI) pattern during growth of a nanostructured diamond film on Ti-6Al-4V alloy. The first 30 minutes are at a high temperature of 820 C and the rest of the film is grown at a low temperature of 580 T. The fringe pattern is observed till the very end due to extremely low surface roughness of 40 nm. The continuation of the smooth nanostructured diamond film growth during low temperature deposition is confirmed by in-situ laser reflectance interferometry and by post-deposition micro-Raman spectroscopy and surface profilometry. Similar experiments

  17. Glucagon Amyloid-like Fibril Morphology Is Selected via Morphology-Dependent Growth Inhibition

    DEFF Research Database (Denmark)

    Andersen, C.B.; Otzen, D.; Christiansen, Gunna

    2007-01-01

    Protein Structure and Biophysics, Novo Nordisk A/S, Novo Nordisk Park, DK-2760 Malov, Denmark, Centre for Insoluble Protein Structures (inSPIN), Department of Life Sciences, Aalborg University, Sohngaardsholmsvej 49, DK-9000 Aalborg, Denmark, and Institute of Medical Microbiology and Immunology...... twisted fibril seeds cannot grow at high concentrations. We conclude that there exists a morphology-dependent mechanism for inhibition of glucagon fibril growth. Light scattering experiments indicate that glucagon is mainly monomeric below 1 mg/mL and increasingly trimeric above this concentration. We...

  18. Energy relaxation in CdSe nanocrystals: the effects of morphology and film preparation.

    Science.gov (United States)

    Spann, Bryan T; Chen, Liangliang; Ruan, Xiulin; Xu, Xianfan

    2013-01-14

    Ultrafast time-resolved absorption spectroscopy is used to investigate exciton dynamics in CdSe nanocrystal films. The effects of morphology, quantum-dot versus quantum-rod, and preparation of nanocrystals in a thin film form are investigated. The measurements revealed longer intraband exciton relaxation in quantum-rods than in quantum-dots. The slowed relaxation in quantum-rods is due to mitigation of the Auger-relaxation mechanism from elongating the nanocrystal. In addition, the nanocrystal thin film showed long-lived confined acoustic phonons corresponding to the ellipsoidal breathing mode, contrary to others work on colloidal systems of CdSe nanocrystals.

  19. GISAXS View of Induced Morphological Changes in Nanostructured CeVO4 Thin Films

    Directory of Open Access Journals (Sweden)

    Magdy Lučić Lavčević

    2011-01-01

    Full Text Available Nanostructured CeVO4 films, designed for applications in electrochemical cells and electrochromic devices, were obtained on glass substrates by the sol-gel process. An analysis of morphological modifications in these films, induced by ultrasonication, annealing, and introduction of lithium ions, was performed, using the grazing-incidence small-angle X-ray scattering technique (GISAXS. The GISAXS results are discussed and related with complementary examinations of the same films in real space, performed by scanning electron microscopy on a different length scale.

  20. Self-Optimizing Photoelectrochemical Growth of Nanopatterned Se–Te Films in Response to the Spectral Distribution of Incident Illumination

    Energy Technology Data Exchange (ETDEWEB)

    Carim, Azhar I. [Division of Chemistry and Chemical; Batara, Nicolas A. [Division of Chemistry and Chemical; Premkumar, Anjali [Division of Chemistry and Chemical; Atwater, Harry A. [Division of Chemistry and Chemical; Lewis, Nathan S. [Division of Chemistry and Chemical

    2015-09-02

    Photoelectrochemical growth of Se–Te films spontaneously produces highly ordered, nanoscale lamellar morphologies with periodicities that can be tuned by varying the illumination wavelength during deposition. This phenomenon has been characterized further herein by determining the morphologies of photoelectrodeposited Se–Te films in response to tailored spectral illumination profiles. Se–Te films grown under illumination from four different sources, having similar average wavelengths but having spectral bandwidths that spanned several orders of magnitude, all nevertheless produced similar structures which had a single, common periodicity as quantitatively identified via Fourier analysis. Film deposition using simultaneous illumination from two narrowband sources, which differed in average wavelength by several hundred nanometers, resulted in a structure with only a single periodicity intermediate between the periods observed when either source alone was used. This single periodicity could be varied by manipulating the relative intensity of the two sources. An iterative model that combined full-wave electromagnetic effects with Monte Carlo growth simulations, and that considered only the fundamental light-material interactions during deposition, was in accord with the morphologies observed experimentally. Simulations of light absorption and concentration in idealized lamellar arrays, in conjunction with all of the available data, additionally indicated that a self-optimization of the periodicity of the nanoscale pattern, resulting in the maximization of the anisotropy of interfacial light absorption in the three-dimensional structure, is consistent with the observed growth process of such films.

  1. Role of electrolyte composition on structural, morphological and in-vitro biological properties of plasma electrolytic oxidation films formed on zirconium

    International Nuclear Information System (INIS)

    M, Sandhyarani; T, Prasadrao; N, Rameshbabu

    2014-01-01

    Highlights: • Uniform oxide films were formed on zirconium by plasma electrolytic oxidation. • Silicate in electrolyte alter the growth of m-ZrO 2 from (1 ¯ 11) to (2 0 0) orientation. • Addition of KOH to electrolyte improved the corrosion resistance of oxide films. • Silicon incorporated oxide films showed higher surface roughness and wettability. • Human osteosarcoma cells were strongly adhered and spreaded on all the oxide films. - Abstract: Development of oxide films on metallic implants with a good combination of corrosion resistance, bioactivity and cell adhesion can greatly improve its biocompatibility and functionality. Thus, the present work is aimed to fabricate oxide films on metallic Zr by plasma electrolytic oxidation (PEO) in methodically varied concentrations of phosphate, silicate and KOH based electrolyte systems using a pulsed DC power source. The oxide films fabricated on Zr are characterized for its phase composition, surface morphology, chemical composition, roughness, wettability, surface energy, corrosion resistance, apatite forming ability and osteoblast cell adhesion. Uniform films with thickness varying from 6 to 11 μm are formed. XRD patterns of all the PEO films showed the predominance of monoclinic zirconia phase. The film formed in phosphate + KOH electrolyte showed superior corrosion resistance, which can be ascribed to its pore free morphology. The films formed in silicate electrolyte showed higher apatite forming ability with good cell adhesion and spreading over its surface which is attributed to its superior surface roughness and wettability characteristics. Among the five different electrolyte systems employed in the present study, the PEO film formed in an electrolyte system with phosphate + silicate + KOH showed optimum corrosion resistance, apatite forming ability and biocompatibility

  2. Morphology Development in Solution-Processed Functional Organic Blend Films: An In Situ Viewpoint

    KAUST Repository

    Richter, Lee J.

    2017-04-17

    Solution-processed organic films are a facile route to high-speed, low cost, large-area deposition of electrically functional components (transistors, solar cells, emitters, etc.) that can enable a diversity of emerging technologies, from Industry 4.0, to the Internet of things, to point-of-use heath care and elder care. The extreme sensitivity of the functional performance of organic films to structure and the general nonequilibrium nature of solution drying result in extreme processing-performance correlations. In this Review, we highlight insights into the fundamentals of solution-based film deposition afforded by recent state-of-the-art in situ measurements of functional film drying. Emphasis is placed on multimodal studies that combine surface-sensitive X-ray scattering (GIWAXS or GISAXS) with optical characterization to clearly define the evolution of solute structure (aggregation, crystallinity, and morphology) with film thickness.

  3. Morphologies and Thermal Variability of Patterned Polymer Films with Poly(styrene-co-maleic anhydride

    Directory of Open Access Journals (Sweden)

    Pieter Samyn

    2014-03-01

    Full Text Available Patterned films of poly(styrene-co-maleic anhydride copolymers were deposited by dip-coating from acetone solutions. A qualitative study of the film morphologies shows the formation of polymer spheres with smaller diameters at higher amounts of maleic anhydride (MA, and long-fibrous features at higher molecular weights. Upon heating, the films progressively re-assemble with short- and long-fibrous structures as a function of heating time and temperature. In parallel, the film morphologies are quantified by image processing and filtering techniques. The differential scanning calorimetry confirms the higher glass transition temperatures with increasing amount of MA. The analysis with Raman spectroscopy shows interactions between the molecules in solution and effects of ring-opening (hydrolysis and ring-closure (formation of MA during drying of the films. The water contact angles on the patterned films are within the hydrophilic range. They mainly correlate with the amount of MA moieties calculated from spectroscopy, while the roughness parameters have a minor effect. The variations in film patterns illustrate the self-assemble ability of the copolymers and confirm a heterogeneous molecular structure, as previously assumed.

  4. On the Morphology of the SDS Film on the Surface of Borosilicate Glass

    Directory of Open Access Journals (Sweden)

    Zih-Yao Shen

    2017-05-01

    Full Text Available Surfactant films on solid surfaces have attracted much attention because of their scientific interest and applications, such as surface treatment agent, or for micro- or nano-scale templates for microfluidic devices. In this study, anionic surfactant sodium dodecyl sulfate (SDS solutions with various charged inorganic salts was spread on a glass substrate and dried to form an SDS thin film. Atomic force microscopy (AFM was employed to observe the micro-structure of the SDS thin film. The effects of inorganic salts on the morphology of the SDS film were observed and discussed. The results of experiments demonstrated that pure SDS film formed patterns of long, parallel, highly-ordered stripes. The existence of the inorganic salt disturbed the structure of the SDS film due to the interaction between the cationic ion and the anionic head groups of SDS. The divalent ion has greater electrostatic interaction with anionic head groups than that of the monovalent ion, and causes a gross change in the morphology of the SDS film. The height of the SDS bilayer measured was consistent with the theoretical value, and the addition of the large-sized monovalent ion would lead to lowering the height of the adsorbed structures.

  5. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  6. Spin coated versus dip coated electrochromic tungsten oxide films: Structure, morphology, optical and electrochemical properties

    International Nuclear Information System (INIS)

    Deepa, M.; Saxena, T.K.; Singh, D.P.; Sood, K.N.; Agnihotry, S.A.

    2006-01-01

    A sol-gel derived acetylated peroxotungstic acid sol encompassing 4 wt.% of oxalic acid dihydrate (OAD) has been employed for the deposition of tungsten oxide (WO 3 ) films by spin coating and dip coating techniques, in view of smart window applications. The morphological and structural evolution of the as-deposited spin and dip coated films as a function of annealing temperature (250 and 500 o C) has been examined and compared by Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). A conspicuous feature of the dip coated film (annealed at 250 o C) is that its electrochromic and electrochemical properties ameliorate with cycling without degradation in contrast to the spin coated film for which these properties deteriorate under repetitive cycling. A comparative study of spin and dip coated nanostructured thin films (annealed at 250 o C) revealed a superior performance for the cycled dip coated film in terms of higher transmission modulation and coloration efficiency in solar and photopic regions, faster switching speed, higher electrochemical activity as well as charge storage capacity. While the dip coated film could endure 2500 color-bleach cycles, the spin coated film could sustain only a 1000 cycles. The better cycling stability of the dip coated film which is a repercussion of a balance between optimal water content, porosity and grain size hints at its potential for electrochromic window applications

  7. Substrate structure dependence of the growth modes of p-quaterphenyl thin films on gold

    International Nuclear Information System (INIS)

    Muellegger, S.; Mitsche, S.; Poelt, P.; Haenel, K.; Birkner, A.; Woell, C.; Winkler, A.

    2005-01-01

    The variably oriented crystallite surfaces of a recrystallized polycrystalline gold sample served as substrates for the investigation of the structure dependence of p-quaterphenyl (4P) thin film growth. The films were prepared in ultrahigh vacuum by organic molecular beam evaporation. Optical microscopy, scanning electron microscopy, combined with laterally resolved electron backscatter diffraction and scanning tunnelling microscopy have been applied to determine the correlation between the substrate surface structure and 4P film morphology. Crystallite surfaces consisting of (110) terraces favour highly anisotropic needle-like 4P growth with the needle orientation normal to the Au directions. Atomic steps on vicinal planes with narrow terraces (< 2 nm) can also induce anisotropy in the 4P thin film growth, in particular elongated 4P islands normal to the step direction. In contrast to that, a nearly isotropic distribution of the needle orientations is observed on Au grains terminated by highly symmetric (111) or (100) crystal planes. Additionally, patches of continuous 4P layers can be found on these surfaces. There is strong evidence that the 4P molecules within the needle-like crystallites are oriented parallel to the Au surface, whereas for the continuous layers the 4P molecules are oriented nearly upright on the surface

  8. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  9. ECO and RESOLVE: Morphology and Disk Growth in Environmental Context

    Science.gov (United States)

    Moffett, Amanda J.; Kannappan, Sheila; Berlind, Andreas A.; Eckert, Kathleen D.; Stark, David; Hendel, David; Norris, Mark A.; Grogin, Norman A.; RESOLVE Team

    2016-01-01

    We present the first data release of the Environmental COntext (ECO) catalog, which was designed to surround and complement the RESOLVE survey with matched photometry, gas and stellar mass estimates, and environment metrics for ~13,000 galaxies in a >500,000 cubic Mpc volume. In the first results from ECO, we study the phenomenon of galaxy disk growth by considering by-eye and quantitative morphological classifications as well as galaxy environments quantified using group identifications and halo abundance matching (on integrated r-band luminosity) as well as smoothed galaxy density fields. Additionally, we derive HI gas masses and upper limits from ALFALFA data and HI mass estimates from the photometric gas fraction technique. We find that blue early-type (E/S0) galaxies, gas-dominated galaxies, and UV-bright disk host galaxies all become distinctly more common below group halo mass ˜10^11.5 Msun, implying that this low group halo mass regime may be a preferred regime for significant disk growth activity. We also find that blue early-type and blue late-type galaxies inhabit environments of similar group halo mass at fixed baryonic mass, consistent with a scenario in which blue early types can regrow late-type disks. More generally, we argue that the traditional morphology-environment relation (i.e., that denser environments have more early types) can be largely attributed to the morphology-galaxy mass relation for centrals and the color-environment relation for satellites. This work has been supported through NSF grant AST-0955368.

  10. New chemistry for the growth of first-row transition metal films by atomic layer deposition

    Science.gov (United States)

    Klesko, Joseph Peter

    Thin films containing first-row transition metals are widely used in microelectronic, photovoltaic, catalytic, and surface-coating applications. In particular, metallic films are essential for interconnects and seed, barrier, and capping layers in integrated circuitry. Traditional vapor deposition methods for film growth include PVD, CVD, or the use of plasma. However, these techniques lack the requisite precision for film growth at the nanoscale, and thus, are increasingly inadequate for many current and future applications. By contrast, ALD is the favored approach for depositing films with absolute surface conformality and thickness control on 3D architectures and in high aspect ratio features. However, the low-temperature chemical reduction of most first-row transition metal cations to their zero-valent state is very challenging due to their negative electrochemical potentials. A lack of strongly-reducing coreagents has rendered the thermal ALD of metallic films an intractable problem for many elements. Additionally, several established ALD processes for metal films are plagued by low growth rates, impurity incorporation, poor nucleation, high surface roughness, or the need for hazardous coreagents. Finally, stoichiometric control of ternary films grown by ALD is rare, but increasingly important, with emerging applications for metal borate films in catalysis and lithium ion batteries. The research herein is focused toward the development of new ALD processes for the broader application of metal, metal oxide, and metal borate thin films to future nanoscale technologies. These processes display self-limited growth and support the facile nucleation of smooth, continuous, high-purity films. Bis(trimethylsilyl) six-membered rings are employed as strongly-reducing organic coreagents for the ALD of titanium and antimony metal films. Additionally, new processes are developed for the growth of high-purity, low-resistivity cobalt and nickel metal films by exploiting the

  11. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  12. High throughput growth and characterization of thin film materials

    Science.gov (United States)

    Mao, Samuel S.

    2013-09-01

    It usually takes more than 10 years for a new material from initial research to its first commercial application. Therefore, accelerating the pace of discovery of new materials is critical to tackling challenges in areas ranging from clean energy to national security. As discovery of new materials has not kept pace with the product design cycles in many sectors of industry, there is a pressing need to develop and utilize high throughput screening and discovery technologies for the growth and characterization of new materials. This article presents two distinctive types of high throughput thin film material growth approaches, along with a number of high throughput characterization techniques, established in the author's group. These approaches include a second-generation "discrete" combinatorial semiconductor discovery technology that enables the creation of arrays of individually separated thin film semiconductor materials of different compositions, and a "continuous" high throughput thin film material screening technology that enables the realization of ternary alloy libraries with continuously varying elemental ratios.

  13. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  14. PEALD AlN: Controlling growth and film crystallinity

    NARCIS (Netherlands)

    Banerjee, Sourish; Aarnink, Antonius A.I.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2015-01-01

    We report on the growth kinetics and material properties of aluminium nitride (AlN) films deposited on Si(111), with plasma enhanced atomic layer deposition (PEALD). Tri-methyl aluminium (TMA) and NH3-plasma were used as the precursors. The ALD window was identified in terms of the process

  15. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Jin Chunming; Narayan, Roger; Tiwari, Ashutosh; Zhou Honghui; Kvit, Alex; Narayan, Jagdish

    2005-01-01

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  16. Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

    International Nuclear Information System (INIS)

    Meral, Kadem; Arik, Mustafa; Onganer, Yavuz

    2016-01-01

    Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

  17. Effect of growth plate geometry and growth direction on prediction of proximal femoral morphology.

    Science.gov (United States)

    Yadav, Priti; Shefelbine, Sandra J; Gutierrez-Farewik, Elena M

    2016-06-14

    Mechanical stimuli play a significant role in the process of endochondral growth. Thus far, approaches to understand the endochondral mechanical growth rate have been limited to the use of approximated location and geometry of the growth plate. Furthermore, growth has been simulated based on the average deflection of the growth plate or of the femoral neck. It has also been reported in the literature that the growth plate lies parallel to one of the principal stresses acting on it, to reduce the shear between epiphysis and diaphysis. Hence the current study objectives were (1) to evaluate the significance of a subject-specific finite element model of the femur and growth plate compared to a simplified growth plate model and (2) to explore the different growth direction models to better understand proximal femoral growth mechanisms. A subject-specific finite element model of an able-bodied 7-year old child was developed. The muscle forces and hip contact force were computed for one gait cycle and applied to a finite element model to determine the specific growth rate. Proximal femoral growth was simulated for two different growth direction models: femoral neck deflection direction and principal stress direction. The principal stress direction model captured the expected tendency for decreasing the neck shaft angle and femoral anteversion for both growth plate models. The results of this study suggest that the subject-specific geometry and consideration of the principal stress direction as growth direction may be a more realistic approach for correct prediction of proximal femoral growth morphology. Copyright © 2016 The Authors. Published by Elsevier Ltd.. All rights reserved.

  18. Morphology and physiology of the epiphyseal growth plate.

    Directory of Open Access Journals (Sweden)

    Robert Klepacz

    2009-05-01

    Full Text Available The epiphyseal growth plate develops from the cartilaginous-orientated mesenchymal cells that express SOX family genes. This multilayer structure is formed by the proliferation and hypertrophy of cells that synthesize the extracellular matrix composed of collagen (mainly type II, IX, X, XI and proteoglycans (aggrecan, decorin, annexin II, V and VI. The resting zone is responsible for protein synthesis and maintaining a germinal structure. In the proliferative zone, cells rapidly duplicate. The subsequent morphological changes take place in the transformation zone, divided into the upper and lower hypertrophic layers. In the degenerative zone, the mineralization process becomes intensive due to increased release of alkaline phosphate, calcium and matrix vesicles by terminally differentiated chondrocytes and some other factors e.g., metaphyseal ingrowth vessels. At this level, as well as in the primary and secondary spongiosa zones, chondrocytes undergo apoptosis and are physiologically eliminated. Unlike adult cartilage, in fetal and early formed growth plates, unusual forms such as authophagal bodies, paralysis and dark chondrocytes were also observed. Their ultrastructure differs greatly from apoptotic and normal cartilage cells. Chondrocyte proliferation and differentiation are regulated by various endocrine, paracrine, and autocrine agents such as growth, thyroid and sex hormones, beta-catenin, bone morphogenetic proteins, insulin-like growth factor, iodothyronine deiodinase, leptin, nitric oxide, transforming growth factor beta and vitamin D metabolites. However, the most significant factor is parathyroid hormone-related protein (PTHrP which is synthesized in the perichondrium by terminally differentiated chondrocytes. Secondary to activation of PTH/PTHrP receptors, PTHrP stimulates cell proliferation by G protein activation and delays their transformation into prehypertrophic and hypertrophic chondrocytes. When proliferation is completed

  19. Structure and Morphology Effects on the Optical Properties of Bimetallic Nanoparticle Films Laser Deposited on a Glass Substrate

    Directory of Open Access Journals (Sweden)

    A. O. Kucherik

    2017-01-01

    Full Text Available Moving nanosecond laser system is used for laser-assisted thermodiffusion deposition of metallic nanoparticles from water-based colloidal solutions. The results obtained for both gold and silver nanoparticles show that film morphology strongly depends on laser scanning speed and the number of passages. We show, furthermore, the possibility of producing bimetallic Au:Ag thin films by laser irradiation of the mixed solutions. As a result of several laser scans, granular nanometric films are found to grow with a well-controlled composition, thickness, and morphology. By changing laser scanning parameters, film morphology can be varied from island structures to quasi-periodic arrays. The optical properties of the deposited structures are found to depend on the film composition, thickness, and mean separation between the particles. The transparency spectra of the deposited films are shown to be defined by their morphology.

  20. Gelatin/potato starch edible biocomposite films: Correlation between morphology and physical properties.

    Science.gov (United States)

    Podshivalov, Aleksandr; Zakharova, Mariia; Glazacheva, Ekaterina; Uspenskaya, Mayya

    2017-02-10

    The paper presents the results of studies of the microstructure morphology and the operational properties of the gelatin/potato starch/glycerol edible biocomposite films varying in the starch content from 0 to 50wt% prepared by casting film-forming solution and dying at 36°C for 15h. The biocomposite films were shown phase separated heterogeneous morphology with the gelatin matrix as a continuous phase and microgranules of starch as a minor phase. It is found that when the starch content ≤ 30wt% the phase separation mechanism is nucleation and grow, whereas the starch content > 30wt% then the spinodal decomposition is the dominant mechanism. The work focuses on findings the influence of the phase separation mechanisms on the size of starch granules during the drying process, as well as the impact of these mechanisms on optical, frictional, mechanical, thermal and water-barrier properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

  1. Interfacial Effects on the Spherulitic Morphology of Isotactic Polystyrene Thin Films on Liquid Substrates

    Directory of Open Access Journals (Sweden)

    Takashi Sasaki

    2016-01-01

    Full Text Available The influence of interfaces on the morphology of flat spherulites of isotactic polystyrene (iPS grown in thin films on liquid substrates was investigated. Amorphous iPS thin films spin-cast from a solution were annealed for cold crystallization on glycerol and silicone oil (nonsolvents for iPS. The number density of grown spherulites was revealed to be higher on the glycerol substrate than on the silicone oil substrate. This implies that the primary nucleation rate of crystallization is greater at the iPS/glycerol interface than at the iPS/silicone oil interface. The results may be consistent with the previous findings that concern the molecular interaction between atactic polystyrene and nonsolvents at the interface. In some cases, holes were formed in the thin films during the cold crystallization due to dewetting, which also significantly affect the spherulite morphology via, for example, transcrystallization.

  2. Morphology modification of perovskite film by a simple post-treatment process in perovskite solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Song, J.; Yang, Y.; Zhao, Y.L., E-mail: sdyulong@cumt.edu.cn; Che, M.; Zhu, L.; Gu, X.Q.; Qiang, Y.H., E-mail: yhqiang@cumt.edu.cn

    2017-03-15

    Highlights: • Perovskite films were post-treated by DMF/CBZ, DMSO/CBZ, or GBL/CBZ blend solvents. • This process could repair pinholes and enhance coverage in perovskite film. • This technique could modify charge transfer process at TiO{sub 2}/perovskite interface. - Abstract: A homogenous perovskite thin film with high coverage is a determining factor for high performance perovskite solar cells. Unlike previous pre-treatments aiming at perovskite precursor, we proposed a simple method to modify the morphology of perovskite films by post-treatment process using mixed solvents of N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), or 1,4-butyrolactone (GBL) with chlorobenzene (CBZ) in this paper. As good solvent of perovskite, DMF, DMSO, and GBL could dissolve the formed perovskite film. Meanwhile, CBZ, anti-solvent of perovskite film, could decrease the dissolving capacity of these good solvents. Therefore, the perovskite film coverage might be improved by the partial dissolution and recrystallization after solvent post-treatment process. Electrochemical impedance spectrometry (EIS) and time-resolved photoluminescence (TRPL) indicated that this post-treatment process could enhance charge transfer at TiO{sub 2}/perovskite interface. Finally, the conversion efficiency increased from 10.10% to 11.82%, 11.68%, and 10.66% using perovskite films post-treated by DMF/CBZ, DMSO/CBZ, and GBL/CBZ blend solvents, respectively.

  3. INFLUENCE OF PH ON THE STRUCTURAL AND MORPHOLOGICAL PROPERTIES OF ZnS THIN FILMS

    Directory of Open Access Journals (Sweden)

    A KASSIM

    2010-06-01

    Full Text Available The ZnS thin films have been obtained from aqueous solution by means of cyclic voltammetry method. The electrochemical bath consisted of zinc sulphate, sodium thiosulfate and triethanolamine. The effect of electrolyte pH on the properties of ZnS thin films was investigated within the range from 3 to 9. The cyclic voltammetry was used to analyse the electrochemical bath. The structural and morphological of thin films were investigated by X-ray diffraction and atomic force microscopy, respectively. The thin films obtained have cubic structure and single phase as analysed by XRD. As the pH was reduced from 9 to 3, the intensities of the peaks corresponding to ZnS increased. AFM image shows the thin films prepared at pH 3 are homogeneous and well covered on the substrate. These thin films consist of small grains which lead to deposition of smoother films. However, as the pH increases up to 7, the number of grains decreases and larger grain size could be obtained. Therefore, the pH plays a major role in synthesis of ZnS thin film and the pH 3 is the best pH under current conditions.

  4. Effect of film morphology on oxygen and water interaction with copper phthalocyanine

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Nicholas [California State University, Long Beach (CSULB); Gredig, Thomas [California State University, Long Beach (CSULB); Ivanov, Ilia N [ORNL

    2016-01-01

    Copper phthalocyanine (CuPc) films of thickness 25 nm and 100 nm were grown by thermal sublimation at 25 C, 150 C, and 250 C in order to vary morphology. Using a source-measure unit and a quartz crystal microbalance (QCM), we measured changes in electrical resistance and film mass in situ during exposure to controlled pulses of O2 and H2O vapor. Mass loading by O2 was enhanced by a factor of 5 in films deposited at 250 C, possibly due to the ~200 C CuPc transition which allows higher O2 mobility between stacked molecules. While gas/vapor sorption occurred over timescales of < 10 minutes, resistance change occurred over timescales > 1 hour, suggesting that mass change occurs by rapid adsorption at active surface sites, whereas resistive response is dominated by slow diffusion of adsorbates into the film bulk. Resistive response generally increases with film deposition temperature due to increased porosity associated with larger crystalline domains. The 25 nm thick films exhibit higher resistive response than 100 nm thick films after an hour of O2/H2O exposure due to the smaller analyte diffusion length required for reaching the film/electrode interface. We found evidence of decoupling of CuPc from the gold-coated QCM crystal due to preferential adsorption of O2/H2O molecules on gold, which is consistent with findings of other studies.

  5. Direct observation of morphological evolution of a catalyst during carbon nanotube forest growth: new insights into growth and growth termination

    Science.gov (United States)

    Jeong, Seojeong; Lee, Jaegeun; Kim, Hwan-Chul; Hwang, Jun Yeon; Ku, Bon-Cheol; Zakharov, Dmitri N.; Maruyama, Benji; Stach, Eric A.; Kim, Seung Min

    2016-01-01

    In this study, we develop a new methodology for transmission electron microscopy (TEM) analysis that enables us to directly investigate the interface between carbon nanotube (CNT) arrays and the catalyst and support layers for CNT forest growth without any damage induced by a post-growth TEM sample preparation. Using this methodology, we perform in situ and ex situ TEM investigations on the evolution of the morphology of the catalyst particles and observe the catalyst particles to climb up through CNT arrays during CNT forest growth. We speculate that the lifted catalysts significantly affect the growth and growth termination of CNT forests along with Ostwald ripening and sub-surface diffusion. Thus, we propose a modified growth termination model which better explains various phenomena related to the growth and growth termination of CNT forests.In this study, we develop a new methodology for transmission electron microscopy (TEM) analysis that enables us to directly investigate the interface between carbon nanotube (CNT) arrays and the catalyst and support layers for CNT forest growth without any damage induced by a post-growth TEM sample preparation. Using this methodology, we perform in situ and ex situ TEM investigations on the evolution of the morphology of the catalyst particles and observe the catalyst particles to climb up through CNT arrays during CNT forest growth. We speculate that the lifted catalysts significantly affect the growth and growth termination of CNT forests along with Ostwald ripening and sub-surface diffusion. Thus, we propose a modified growth termination model which better explains various phenomena related to the growth and growth termination of CNT forests. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05547d

  6. Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    Benny Joseph

    2008-01-01

    Full Text Available Thin films of Cobalt Phthalocyanine (CoPc are fabricated at a base pressure of 10-5 m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM, which show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are needle like, which are interconnected at high substrate temperatures. The optical band gap energy is almost same on substrate temperature variation. Trap energy levels are also observed for these films.

  7. Chitosan-Starch Films with Natural Extracts: Physical, Chemical, Morphological and Thermal Properties

    Directory of Open Access Journals (Sweden)

    Jessica I. Lozano-Navarro

    2018-01-01

    Full Text Available The aim of this study is to analyze the properties of a series of polysaccharide composite films, such as apparent density, color, the presence of functional groups, morphology, and thermal stability, as well as the correlation between them and their antimicrobial and optical properties. Natural antioxidants such as anthocyanins (from cranberry; blueberry and pomegranate; betalains (from beetroot and pitaya; resveratrol (from grape; and thymol and carvacrol (from oregano were added to the films. Few changes in the position and intensity of the FTIR spectra bands were observed despite the low content of extract added to the films. Due to this fact, the antioxidants were extracted and identified by spectroscopic analysis; and they were also quantified using the Folin-Denis method and a gallic acid calibration curve, which confirmed the presence of natural antioxidants in the films. According to the SEM analysis, the presence of natural antioxidants has no influence on the film morphology because the stretch marks and white points that were observed were related to starch presence. On the other hand, the TGA analysis showed that the type of extract influences the total weight loss. The overall interpretation of the results suggests that the use of natural antioxidants as additives for chitosan-starch film preparation has a prominent impact on most of the critical properties that are decisive in making them suitable for food-packing applications.

  8. Morphology and microstructure of picene thin-films for air-operating transistors

    Energy Technology Data Exchange (ETDEWEB)

    Diallo, Abdou Karim [Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille (France); Kurihara, Ryouta [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Yoshimoto, Noriyuki, E-mail: yoshimoto@iwate-u.ac.jp [Graduate School of Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551 (Japan); Videlot-Ackermann, Christine, E-mail: videlot@cinam.univ-mrs.fr [Aix Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille (France)

    2014-09-30

    Graphical abstract: - Highlights: • Vacuum deposition of picene active layer for devices operating in air. • Morphology and microstructure of picene thin-films. • Low temperature thermal annealing for air-performing transistors based on picene. - Abstract: Picene, a p-type organic semiconductor, was involved as active layer in organic thin film transistors (OTFTs). Picene thin films were realized by vacuum evaporation on gate dielectrics based on bare silicon dioxide (SiO{sub 2}) or coated with polymethyl-methacrylate (PMMA). Assisted by a controlled post-deposition annealing at low temperature (<100 °C), OTFTs were characterized in air to provide a hole mobility up to 0.2 cm{sup 2}/V s. Thin-film morphology and microstructure were studied in details by atomic force microscopy (AFM) and X-ray film diffractometry (XRD) before and after the post-annealing as thickness and vacuum conditions dependences. While any molecular reorganization was induced by such thermal post-treatment, the unavoidable presence of H{sub 2}O molecules in air and their diffusion in thin films were consistently reduced to offer air-operating OTFTs.

  9. Chitosan-Starch Films with Natural Extracts: Physical, Chemical, Morphological and Thermal Properties.

    Science.gov (United States)

    Lozano-Navarro, Jessica I; Díaz-Zavala, Nancy P; Velasco-Santos, Carlos; Melo-Banda, José A; Páramo-García, Ulises; Paraguay-Delgado, Francisco; García-Alamilla, Ricardo; Martínez-Hernández, Ana L; Zapién-Castillo, Samuel

    2018-01-12

    The aim of this study is to analyze the properties of a series of polysaccharide composite films, such as apparent density, color, the presence of functional groups, morphology, and thermal stability, as well as the correlation between them and their antimicrobial and optical properties. Natural antioxidants such as anthocyanins (from cranberry; blueberry and pomegranate); betalains (from beetroot and pitaya); resveratrol (from grape); and thymol and carvacrol (from oregano) were added to the films. Few changes in the position and intensity of the FTIR spectra bands were observed despite the low content of extract added to the films. Due to this fact, the antioxidants were extracted and identified by spectroscopic analysis; and they were also quantified using the Folin-Denis method and a gallic acid calibration curve, which confirmed the presence of natural antioxidants in the films. According to the SEM analysis, the presence of natural antioxidants has no influence on the film morphology because the stretch marks and white points that were observed were related to starch presence. On the other hand, the TGA analysis showed that the type of extract influences the total weight loss. The overall interpretation of the results suggests that the use of natural antioxidants as additives for chitosan-starch film preparation has a prominent impact on most of the critical properties that are decisive in making them suitable for food-packing applications.

  10. Chitosan-Starch Films with Natural Extracts: Physical, Chemical, Morphological and Thermal Properties

    Science.gov (United States)

    Díaz-Zavala, Nancy P.; Melo-Banda, José A.; García-Alamilla, Ricardo; Martínez-Hernández, Ana L.; Zapién-Castillo, Samuel

    2018-01-01

    The aim of this study is to analyze the properties of a series of polysaccharide composite films, such as apparent density, color, the presence of functional groups, morphology, and thermal stability, as well as the correlation between them and their antimicrobial and optical properties. Natural antioxidants such as anthocyanins (from cranberry; blueberry and pomegranate); betalains (from beetroot and pitaya); resveratrol (from grape); and thymol and carvacrol (from oregano) were added to the films. Few changes in the position and intensity of the FTIR spectra bands were observed despite the low content of extract added to the films. Due to this fact, the antioxidants were extracted and identified by spectroscopic analysis; and they were also quantified using the Folin-Denis method and a gallic acid calibration curve, which confirmed the presence of natural antioxidants in the films. According to the SEM analysis, the presence of natural antioxidants has no influence on the film morphology because the stretch marks and white points that were observed were related to starch presence. On the other hand, the TGA analysis showed that the type of extract influences the total weight loss. The overall interpretation of the results suggests that the use of natural antioxidants as additives for chitosan-starch film preparation has a prominent impact on most of the critical properties that are decisive in making them suitable for food-packing applications. PMID:29329275

  11. A study of growth and thermal dewetting behavior of ultra-thin gold films using transmission electron microscopy

    Directory of Open Access Journals (Sweden)

    Sudheer

    2017-07-01

    Full Text Available The growth and solid-state dewetting behavior of Au thin films (0.7 to 8.4 nm deposited on the formvar film (substrate by sputtering technique have been studied using transmission electron microscopy. The size and number density of the Au nanoparticles (NPs change with an increase in the film thickness (0.7 to 2.8 nm. Nearly spherical Au NPs are obtained for 6 nm show capability to be used as an irreversible temperature sensor with a sensitivity of ∼0.1 CAF/°C. It is observed that annealing affects the crystallinity of the Au grains in the films. The electron diffraction measurement also shows annealing induced morphological evolution in the percolated Au thin films (≥3 nm during solid-state dewetting and recrystallization of the grains.

  12. A study of size dependent structure, morphology and luminescence behavior of CdS films on Si substrate

    International Nuclear Information System (INIS)

    Kaushik, Diksha; Singh, Ragini Raj; Sharma, Madhulika; Gupta, D.K.; Lalla, N.P.; Pandey, R.K.

    2007-01-01

    Size tunable cadmium sulfide (CdS) films deposited by a dip coating technique on silicon (100) and indium tin oxide/glass substrates have been characterized using X-ray diffraction, X-ray reflectivity, transmission electron microscopy, atomic force microscopy and photoluminescence spectroscopy. The structural characterization indicated growth of an oriented phase of cadmium sulfide. Transmission electron microscopy used to calculate the particle size indicated narrow size dispersion. The tendency of nanocrystalline CdS films to form ordered clusters of CdS quantum dots on silicon (100) substrate has been revealed by morphological studies using atomic force microscopy. The photoluminescence emission spectroscopy of the cadmium sulfide films has also been investigated. It is shown that the nanocrystalline CdS exhibit intense photoluminescence as compared to the large grained polycrystalline CdS films. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the observed photoluminescence behavior of CdS is substantially enhanced when the nanocrystallites are assembled on silicon (100) substrate

  13. Preparation and morphology control of amphiphilic block copolymer thin films using mixed solvent vapors

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Chan, E-mail: xiechan@pku.edu.cn [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871 (China); School of Material Science and Engineering, Nanchang Hangkong University, Jiangxi, Nanchang, 330063 (China); Zhou, Yu; Zhou, Feng; Wu, Hongwei; Zou, Dechun; Fan, Xinghe [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871 (China); Shen, Zhihao, E-mail: zshen@pku.edu.cn [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871 (China)

    2014-03-01

    Graphical abstract: A series of well-defined amphiphilic block copolymer (BCP), poly[N,N-(dimethylamino)ethyl methacrylate]-block-polystyrene (PDMAEMA-b-PS), was synthesized using the ARGET ATRP method. Solvent annealing was applied for controlling the thin-film morphologies. A vertical nanocylinder structure forms in the thin film annealed under the vapors of binary mixed solvents from water and tetrahydrofuran which have a strong selectivity for the minority PDMAEMA block. - Highlights: • Well-defined amphiphilic diblock copolymers synthesized. • Systematic study on morphologies in thin films controlled by annealing under vapors of mixed solvents. - Abstract: A well-defined amphiphilic diblock copolymer, poly[N,N-(dimethylamino)ethyl methacrylate]-block-polystyrene (PDMAEMA-b-PS), was synthesized using activators regenerated by electron transfer atom transfer radical polymerization. The formation and transition of morphologies in PDMAEMA-b-PS thin films annealed under the vapors of water, tetrahydrofuran, and their binary mixed solvents were first investigated by using atomic force microscopy and scanning electron microscopy. By changing the composition of the annealing solvent, morphological evolution with increasing vapor preferential affinity was observed. A vertical nanocylinder structure forms in the PDMAEMA-b-PS thin film when it is annealed under a mixed solvent vapor with Δχ ∼ −0.975 having a strong preferential affinity for the minority PDMAEMA block at ambient temperature. The self-assembly of PDMAEMA-b-PS thin films provides a new convenient way to fabricate stimuli-responsive substrates with potential applications in adhesion control, wetting, and binding or release of functional molecules at surfaces.

  14. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  15. Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies

    International Nuclear Information System (INIS)

    Sakhare, R.D.; Khuspe, G.D.; Navale, S.T.; Mulik, R.N.; Chougule, M.A.; Pawar, R.C.; Lee, C.S.; Sen, Shashwati; Patil, V.B.

    2013-01-01

    Highlights: ► Novel chemical route of synthesis of SnO 2 films. ► Physical properties SnO 2 are influenced by process temperature. ► The room temperature electrical conductivity of SnO 2 is of 10 −7 –10 −5 (Ω cm) −1 . ► SnO 2 exhibit high absorption coefficient (10 4 cm −1 ). -- Abstract: Sol–gel spin coating method has been successfully employed for preparation of nanocrystalline tin oxide (SnO 2 ) thin films. The effect of processing temperature on the structure, morphology, electrical conductivity, thermoelectric power and band gap was studied using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction pattern, atomic force microscopy, two probe technique and UV–visible spectroscopy. X-ray diffraction (XRD) analysis showed that SnO 2 films are crystallized in the tetragonal phase and present a random orientation. Field emission scanning electron microscopy (FESEM) analysis revealed that surface morphology of the tin oxide film consists nanocrystalline grains with uniform coverage of the substrate surface. Transmission electron microscopy (TEM) of SnO 2 film showed nanocrystals having diameter ranging from 5 to 10 nm. Selected area electron diffraction (SAED) pattern confirms tetragonal phase evolution of SnO 2 . Atomic force microscopy (AFM) analysis showed surface morphology of SnO 2 film is smooth. The dc electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10 −7 to 10 −5 (Ω cm) −1 as processing temperature increased from 400 to 700 °C. Thermo power measurement confirms n-type conduction. The band gap energy of SnO 2 film decreased from 3.88 to 3.60 eV as processing temperature increased from 400 to 700 °C

  16. Growth models for morphological traits of sunn hemp

    Directory of Open Access Journals (Sweden)

    Cláudia Marques de Bem

    2017-10-01

    Full Text Available The objective of the present study was to fit Gompertz and Logistic nonlinear to descriptions of morphological traits of sunn hemp. Two uniformity trials were conducted and the crops received identical treatment in all experimental area. Sunn hemp seeds were sown in rows 0.5 m apart with a plant density of 20 plants per row meter in a usable area of 52 m × 50 m. The following morphological traits were evaluated: plant height (PH, number of leaves (NL, stem diameter (SD, and root length (RL. These traits were assessed daily during two sowing periods—seeds were sown on October 22, 2014 (first period and December 3, 2014 (second period. Four plants were randomly collected daily, beginning 7 days after first period and 13 days after for second period, totaling 94 and 76 evaluation days, respectively. For Gompertz models the equation was used y=a*e^((?-e?^((b-c*xiand Logistic models the equation was used yi= a/(1+e^((-b-c*xi. The inflection points of the Gompertz and Logistic models were calculated and the goodness of fit was quantified using the adjusted coefficient of determination, Akaike information criterion, standard deviation of residuals, mean absolute deviation, mean absolute percentage error, and mean prediction error. Differences were observed between the Gompertz and Logistic models and between the experimental periods in the parameter estimate for all morphological traits measured. Satisfactory growth curve fittings were achieved for plant height, number of leaves, and stem diameter in both models using the evaluation criteria: coefficient of determination (R², Akaike information criterion (AIC, standard deviation of residuals (SDR, mean absolute deviation (MAD, mean absolute percentage error (MAPE, and mean prediction error (MPE.

  17. Magnesium growth in magnesium deuteride thin films during deuterium desorption

    Energy Technology Data Exchange (ETDEWEB)

    Checchetto, R., E-mail: riccardo.checchetto@unitn.it [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Miotello, A. [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Mengucci, P.; Barucca, G. [Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, Università Politecnica delle Marche, I-60131 Ancona (Italy)

    2013-12-15

    Highlights: ► Highly oriented Pd-capped magnesium deuteride thin films. ► The MgD{sub 2} dissociation was studied at temperatures not exceeding 100 °C. ► The structure of the film samples was analyzed by XRD and TEM. ► The transformation is controlled by the re-growth velocity of the Mg layers. ► The transformation is thermally activated, activation energy value of 1.3 ± 0.1 eV. -- Abstract: Pd- capped nanocrystalline magnesium thin films having columnar structure were deposited on Si substrate by e-gun deposition and submitted to thermal annealing in D{sub 2} atmosphere to promote the metal to deuteride phase transformation. The kinetics of the reverse deuteride to metal transformation was studied by Thermal Desorption Spectroscopy (TDS) while the structure of the as deposited and transformed samples was analyzed by X-rays diffraction and Transmission Electron Microscopy (TEM). In Pd- capped MgD{sub 2} thin films the deuteride to metal transformation begins at the interface between un-reacted Mg and transformed MgD{sub 2} layers. The D{sub 2} desorption kinetics is controlled by MgD{sub 2}/Mg interface effects, specifically the re-growth velocity of the Mg layers. The Mg re-growth has thermally activated character and shows an activation energy value of 1.3 ± 0.1 eV.

  18. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  19. Growth and morphology of thermophilic dairy starters in alginate beads.

    Science.gov (United States)

    Lamboley, Laurence; St-Gelais, Daniel; Champagne, Claude P; Lamoureux, Maryse

    2003-06-01

    The aim of this research was to produce concentrated biomasses of thermophilic lactic starters using immobilized cell technology (ICT). Fermentations were carried out in milk using pH control with cells microentrapped in alginate beads. In the ICT fermentations, beads represented 17% of the weight. Some assays were carried out with free cells without pH control, in order to compare the ICT populations with those of classical starters. With Streptococcus thermophilus, overall populations in the fermentor were similar, but maximum bead population for (8.2 x 10(9) cfu/g beads) was 13 times higher than that obtained in a traditional starter (4.9 x 10(8) cfu/ml). For both Lactobacillus helveticus strains studied, immobilized-cell populations were about 3 x 10(9) cfu/g beads. Production of immobilized Lb. bulgaricus 210R strain was not possible, since no increases in viable counts occurred in beads. Therefore, production of concentrated cell suspension in alginate beads was more effective for S. thermophilus. Photomicrographs of cells in alginate beads demonstrated that, while the morphology of S. thermophilus remained unchanged during the ICT fermentation, immobilized cells of Lb. helveticus appeared wider. In addition, cells of Lb. bulgaricus were curved and elongated. These morphological changes would also impair the growth of immobilized lactobacilli.

  20. Diamond film growth with modification properties of adhesion between substrate and diamond film

    Directory of Open Access Journals (Sweden)

    Setasuwon P.

    2004-03-01

    Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

  1. Influence of substrate surfaces on the growth of organic films

    Science.gov (United States)

    Das, A.; Salvan, G.; Kampen, T. U.; Hoyer, W.; Zahn, D. R. T.

    2003-05-01

    3,4,9,10-Perylene tetracarboxylic dianhydride (PTCDA) films were grown by organic molecular beam deposition (OMBD) under UHV conditions on hydrogen terminated Si(1 0 0) and sulphur passivated GaAs(1 0 0) surfaces. X-ray diffraction (XRD), X-ray reflectivity (XRR), Raman spectroscopy, and atomic force microscopy (AFM) are employed to study the influence of substrate surfaces on the structural properties of the organic films. Both phases of PTCDA, α- and β-polymorphs, are found to grow on both substrates. The substrate surfaces determine the preferential growth of α- and β-phases of PTCDA crystals at room temperature.

  2. Analysis of layer-by-layer thin-film oxide growth using RHEED and Atomic Force Microscopy

    Science.gov (United States)

    Adler, Eli; Sullivan, M. C.; Gutierrez-Llorente, Araceli; Joress, H.; Woll, A.; Brock, J. D.

    2015-03-01

    Reflection high energy electron diffraction (RHEED) is commonly used as an in situ analysis tool for layer-by-layer thin-film growth. Atomic force microscopy is an equally common ex situ tool for analysis of the film surface, providing visual evidence of the surface morphology. During growth, the RHEED intensity oscillates as the film surface changes in roughness. It is often assumed that the maxima of the RHEED oscillations signify a complete layer, however, the oscillations in oxide systems can be misleading. Thus, using only the RHEED maxima is insufficient. X-ray reflectivity can also be used to analyze growth, as the intensity oscillates in phase with the smoothness of the surface. Using x-ray reflectivity to determine the thin film layer deposition, we grew three films where the x-ray and RHEED oscillations were nearly exactly out of phase and halted deposition at different points in the growth. Pre-growth and post-growth AFM images emphasize the fact that the maxima in RHEED are not a justification for determining layer completion. Work conducted at the Cornell High Energy Synchrotron Source (CHESS) supported by NSF Awards DMR-1332208 and DMR-0936384 and the Cornell Center for Materials Research Shared Facilities are supported through DMR-1120296.

  3. Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

    International Nuclear Information System (INIS)

    Villalpando, I.; John, P.; Wilson, J. I. B.

    2017-01-01

    The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

  4. Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

    Energy Technology Data Exchange (ETDEWEB)

    Villalpando, I. [Centro de Investigacion de los Recursos Naturales, Antigua Normal Rural, Salaices, Lopez, Chihuahua (Mexico); John, P.; Wilson, J. I. B., E-mail: isaelav@hotmail.com [School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14-4AS (United Kingdom)

    2017-11-01

    The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

  5. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  6. Effect of annealing time on morphological characteristics of Ba(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Anicete-Santos, M.; Pontes, F.M.; Souza, I.A.; Santos, L.P.S.; Rosa, I.L.V.; Santos, M.R.M.C.; Santos-Junior, L.S.; Leite, E.R.; Longo, E.

    2007-01-01

    Ba(Zr 0.50 Ti 0.50 )O 3 thin films were prepared by the polymeric precursor method using the annealing low temperature of 300 o C for 8, 16, 24, 48, 96 and 192h in a furnace tube with oxygen atmosphere. The X-ray diffraction patterns revealed that the film annealed for 192 h presented some crystallographic planes (1bar 0bar 0) (1bar 1bar 0) and (2bar 0bar 0) in its crystalline lattice. Fourier transformed infrared presented the formation of metal-oxygen stretching at around 756cm -1 . The atomic force microscopy analysis presented the growth of granules in the Ba(Zr 0.50 Ti 0.50 )O 3 films annealed from 8 to 96h. The crystalline film annealed for 192h already presents grains in its perovskite structure. It evidenced a reduction in the thickness of the thin films with the increase of the annealing time

  7. Pathways to Mesoporous Resin/Carbon Thin Films with Alternating Gyroid Morphology

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Qi [Department; Matsuoka, Fumiaki [Department; Suh, Hyo Seon [Institute; Materials; Beaucage, Peter A. [Department; Xiong, Shisheng [Institute; Materials; Smilgies, Detlef-M. [Cornell; Tan, Kwan Wee [Department; School; Werner, Jörg G. [Department; Nealey, Paul F. [Institute; Materials; Wiesner, Ulrich B. [Department

    2017-12-19

    Three-dimensional (3D) mesoporous thin films with sub-100 nm periodic lattices are of increasing interest as templates for a number of nanotechnology applications, yet are hard to achieve with conventional top-down fabrication methods. Block copolymer self-assembly derived mesoscale structures provide a toolbox for such 3D template formation. In this work, single (alternating) gyroidal and double gyroidal mesoporous thin-film structures are achieved via solvent vapor annealing assisted co-assembly of poly(isoprene-block-styrene-block-ethylene oxide) (PI-b-PS-b-PEO, ISO) and resorcinol/phenol formaldehyde resols. In particular, the alternating gyroid thin-film morphology is highly desirable for potential template backfilling processes as a result of the large pore volume fraction. In situ grazing-incidence small-angle X-ray scattering during solvent annealing is employed as a tool to elucidate and navigate the pathway complexity of the structure formation processes. The resulting network structures are resistant to high temperatures provided an inert atmosphere. The thin films have tunable hydrophilicity from pyrolysis at different temperatures, while pore sizes can be tailored by varying ISO molar mass. A transfer technique between substrates is demonstrated for alternating gyroidal mesoporous thin films, circumventing the need to re-optimize film formation protocols for different substrates. Increased conductivity after pyrolysis at high temperatures demonstrates that these gyroidal mesoporous resin/carbon thin films have potential as functional 3D templates for a number of nanomaterials applications.

  8. In situ morphology studies of the mechanism for solution additive effects on the formation of bulk heterojunction films

    KAUST Repository

    Richter, Lee J.

    2014-09-29

    The most successful active film morphology in organic photovoltaics is the bulk heterojunction (BHJ). The performance of a BHJ arises from a complex interplay of the spatial organization of the segregated donor and acceptor phases and the local order/quality of the respective phases. These critical morphological features develop dynamically during film formation, and it has become common practice to control them by the introduction of processing additives. Here, in situ grazing incidence X-ray diffraction (GIXD) and grazing incidence small angle X-ray scattering (GISAXS) studies of the development of order in BHJ films formed from the donor polymer poly(3-hexylthiophene) and acceptor phenyl-C61-butyric acid methyl ester under the influence of two common additives, 1,8-octanedithiol and 1-chloronaphthalene, are reported. By comparing optical aggregation to crystallization and using GISAXS to determine the number and nature of phases present during drying, two common mechanisms by which the additives increase P3HT crystallinity are identified. Additives accelerate the appearance of pre-crystalline nuclei by controlling solvent quality and allow for extended crystal growth by delaying the onset of PCBM-induced vitrification. The glass transition effects vary system-to-system and may be correlated to the number and composition of phases present during drying. Synchrotron X-ray scattering measurements of nanoscale structure evolution during the drying of polymer-fullerene photovoltaic films are described. Changes in the number and nature of phases, as well as the order within them, reveals the mechanisms by which formulation additives promote structural characteristics leading to higher power conversion efficiencies.

  9. Morphological Evolution of Gyroid-Forming Block Copolymer Thin Films with Varying Solvent Evaporation Rate.

    Science.gov (United States)

    Wu, Yi-Hsiu; Lo, Ting-Ya; She, Ming-Shiuan; Ho, Rong-Ming

    2015-08-05

    In this study, we aim to examine the morphological evolution of block copolymer (BCP) nanostructured thin films through solvent evaporation at different rates for solvent swollen polystyrene-block-poly(l-lactide) (PS-PLLA). Interesting phase transitions from disorder to perpendicular cylinder and then gyroid can be found while using a partially selective solvent for PS to swell PS-PLLA thin film followed by solvent evaporation. During the transitions, gyroid-forming BCP thin film with characteristic crystallographic planes of (111)G, (110)G, and (211)G parallel to air surface can be observed, and will gradually transform into coexisting (110)G and (211)G planes, and finally transforms to (211)G plane due to the preferential segregation of constituted block to the surface (i.e., the thermodynamic origin for self-assembly) that affects the relative amount of each component at the air surface. With the decrease on the evaporation rate, the disorder phase will transform to parallel cylinder and then directly to (211)G without transition to perpendicular cylinder phase. Most importantly, the morphological evolution of PS-PLLA thin films is strongly dependent upon the solvent removal rate only in the initial stage of the evaporation process due to the anisotropy of cylinder structure. Once the morphology is transformed back to the isotropic gyroid structure after long evaporation, the morphological evolution will only relate to the variation of the surface composition. Similar phase transitions at the substrate can also be obtained by controlling the ratio of PLLA-OH to PS-OH homopolymers to functionalize the substrate. As a result, the fabrication of well-defined nanostructured thin films with controlled orientation can be achieved by simple swelling and deswelling with controlled evaporation rate.

  10. Exploration of Solvent Effects On Morphology of Polyaniline & Other Polymer Films Deposited Through RIR-MAPLE

    Science.gov (United States)

    Barraza, Enrique; Stiff-Roberts, Adrienne

    Through the use of aromatic solvents with varying numbers of hydroxyl and methyl moieties, there is an opportunity to positively impact morphology of polymer films deposited through emulsion-based Resonant-Infrared Matrix-Assisted Pulsed Laser Evaporation (RIR-MAPLE). These more complex solvents may result in smaller emulsified particles within the target, such that smoother films are achieved. We hypothesize the amphiphilic nature of polymers, like doped Polyaniline, requires a solvent with the same solubility to form a stable emulsion target. Control over the emulsion and resulting film properties can yield beneficial device properties, like low contact resistance. Our hypothesis is also tested against hydrophobic polymers, like P3HT, which have been deposited successfully using RIR-MAPLE with chlorobenzenes as the solvent family. We propose that the addition of hydroxyl moieties to the aromatic ring of the solvent should also yield more control over the film morphology. Atomic force microscopy, UV-Vis absorbance, and dark current density-voltage measurements of the resulting films will be reported, as well as a discussion of how these results relate to previously understood paradigms in RIR-MAPLE deposition.

  11. Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

    International Nuclear Information System (INIS)

    Hemmous, M.; Layadi, A.; Guittoum, A.; Souami, N.; Mebarki, M.; Menni, N.

    2014-01-01

    Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al 2 O 3 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni–Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t Cr , then stress is relieved and grain size increases. All these results will be discussed and correlated. - Highlights: • The structural and electrical properties of evaporated Ni thin films are studied. • The effect of thickness, substrates and Cu underlayer is investigated. • Texture, grain size, strain and surface morphology are discussed. • Growth modes are described as a function of Ni thickness

  12. Oxygen flux influence on the morphological, structural and optical properties of Zn1-xMgxO thin films grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Su, S.C.; Lu, Y.M.; Zhang, Z.Z.; Li, B.H.; Shen, D.Z.; Yao, B.; Zhang, J.Y.; Zhao, D.X.; Fan, X.W.

    2008-01-01

    The Zn 1-x Mg x O thin films were grown on Al 2 O 3 substrate with various O 2 flow rates by plasma-assisted molecular beam epitaxy (P-MBE). The growth conditions were optimized by the characterizations of morphology, structural and optical properties. The Mg content of the Zn 1-x Mg x O thin film increases monotonously with decreasing the oxygen flux. X-ray diffractometer (XRD) measurements show that all the thin films are preferred (0 0 2) orientated. By transmittance and absorption measurements, it was found that the band gap of the film decreases gradually with increasing oxygen flow rate. The surface morphology dependent on the oxygen flow rate was also studied by field emission scanning electron microscopy (FE-SEM). The surface roughness became significant with increasing oxygen flow rate, and the nanostructures were formed at the larger flow rate. The relationship between the morphology and the oxygen flow rate of Zn 1-x Mg x O films was discussed

  13. Sulfur ion concentration dependent morphological evolution of CdS thin films and its subsequent effect on photo-electrochemical performance.

    Science.gov (United States)

    Kamble, Archana; Sinha, Bhavesh; Agawane, Ganesh; Vanalakar, Sharad; Kim, In Young; Kim, Jin Young; Kale, Sampat S; Patil, Pramod; Kim, Jin Hyeok

    2016-10-12

    The sulfur ion concentration dependent morphological evolution and its subsequent effect on photo-electrochemical properties of chemically synthesized CdS thin films have been systematically investigated. The plausible growth mechanism for the morphological evolution of CdS thin films due to a change in sulfur ion concentration has been proposed. Scanning electron micrographs (SEMs) reveal that the morphology of CdS thin films has been changed from spherical grains to vertically aligned nanoflakes by systematic control of sulfur ion concentration. This article elucidates the astute relationships between precursor concentrations, reaction rate and morphological evolution. The X-ray diffraction (XRD) patterns reveal the formation of hexagonal wurtzite CdS thin films with the preferred (002) orientation for CdS nanoflakes, which is further supported by the analysis of the high resolution transmission electron micrographs (HRTEMs). Optical absorption studies show a red shift in the absorption edge with an increase in sulfur concentration. The beneficial role of nanoflake formation is easily reflected in the photo-electrochemical performance. Improved solar cell performances are observed for CdS nanoflakes grown with a sulfur to cadmium ion concentration ratio of 4 (S : Cd = 4).

  14. Growth, structural, electrical and optical properties of the thermally evaporated tungsten trioxide (WO{sub 3}) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patel, K.J. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara 390001, Gujarat (India); Panchal, C.J. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara 390001, Gujarat (India)], E-mail: cjpanchal_msu@yahoo.com; Kheraj, V.A.; Desai, M.S. [Applied Physics Department, Faculty of Technology and Engineering, M.S. University of Baroda, Vadodara 390001, Gujarat (India)

    2009-03-15

    Tungsten trioxide (WO{sub 3}) thin films are of great interest due to their enormous and promising applications in various opto-electronic thin-film devices. We have investigated the structural, electrical, and optical properties of the WO{sub 3} thin films grown by thermal evaporation of WO{sub 3} powder and their dependence on growth condition. The WO{sub 3} thin films were grown on glass substrates at different substrate temperature varying from room temperature to 510 deg. C. The structural characterization and surface morphology were carried out using X-ray diffraction and atomic force microscopy, respectively. The amorphous films were obtained at substrate temperatures below 450 deg. C whereas films grown above 450 deg. C were crystalline. The surface roughness and the grain size of the films increase on increasing the substrate temperature. The electrical characterization has been carried out using four-point-probe methods. The resistivity of the films decreases significantly while the carrier concentration and mobility increase with the substrate temperature. The transparency and optical energy band-gap, E{sub g}, of the films are found to decrease monotonically as the substrate temperature increases.

  15. Self-regulating MBE growth of stoichiometric BaSnO3 films via reactive radical mechanism

    Science.gov (United States)

    Prakash, Abhinav; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat

    Growth of thin films comprising of element with low oxidation potential such as Sn often requires reactive oxidants such as ozone or high-pressure oxygen plasma. By utilizing the chemistry of highly reactive radical of Sn, we will present on the growth of phase-pure, epitaxial BaSnO3 films using a hybrid molecular beam epitaxy (MBE) approach with scalable growth rates. The notable finding was that Sn radicals are very reactive to yield phase-pure BaSnO3 films even in molecular oxygen. In this approach, we use hexamethylditin (HMDT) as a tin source, a solid effusion cell for Ba and either molecular oxygen or an rf oxygen plasma source. Phase-pure BaSnO3 films were grown at 900 0C, and oxygen pressure of 5x10-6 Torr as a function Sn:Ba ratio. In-situ time-dependent RHEED intensity oscillations were observed establishing a layer-by-layer growth mode and a critical thickness of ~1 nm for strain relaxation. Rutherford backscattering spectrometry and lattice constant determined using high-resolution X-ray diffraction was used to optimize cation stoichiometry. ``MBE growth window'' was identified where films show bulk-like lattice parameter (4.116 Å) over a wide-range of cation flux ratios. A correlation between RHEED patterns, stoichiometry, and surface morphology was established This work is supported primarily by NSF (DMR-1410888).

  16. Impact of Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation (RIR-MAPLE) on Morphology and Charge Conduction in Conjugated Polymer and Bulk Heterojunction Thin Films

    Science.gov (United States)

    Stiff-Roberts, Adrienne; McCormick, Ryan; Atewologun, Ayomide

    2014-03-01

    An approach to improve organic photovoltaic efficiency is to increase vertical charge conduction by promoting out-of-plane π- π stacking in conjugated polymers. Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) features multiple growth parameters that can be varied to achieve a desired organic thin film property. In addition, RIR-MAPLE enables nanoscale domains in blended polymeric films and multi-layer polymeric films regardless of constituent solubility. Thus, RIR-MAPLE deposition is compared to solution-cast films as a possible approach to increase out-of-plane charge transport in polymers and bulk heterojunctions. Two common, solar cell polymers are investigated: P3HT and PCPDTBT. Materials characterization includes grazing-incidence, wide angle x-ray scattering (GIWAXS) for structural information and two techniques to determine hole mobility: organic field effect transistors to measure in-plane mobility and charge extraction by linearly increasing voltage to measure out-of-plane mobility. Initial indications are that the RIR-MAPLE films have a fundamentally different morphology compared to solution-cast films. In the case of P3HT, an enhancement in out-of-plane π- π stacking was observed by GIWAXS in RIR-MAPLE films compared to solution-cast films. A portion of this research was conducted at CNMS at ORNL.

  17. Effects of cadmium salts on the structure, morphology and optical properties of acidic chemical bath deposited CdS thin films

    International Nuclear Information System (INIS)

    Cao, M.; Sun, Y.; Wu, J.; Chen, X.; Dai, N.

    2010-01-01

    Research highlights: → N-type semiconducting CdS thin films have been widely used as a window layer in the solar cells. CdS thin films prepared by chemical bath deposition (CBD) have been used in CdTe and CIGS based solar cells. Among existing techniques, CBD was simple and inexpensive to deposit CdS thin films for mass production. Typically, the CBD process for CdS films is carried out in an alkaline aqueous solution comprised of thiourea and ammonia. Recently, CBD process in acidic solutions has been developed and used for the optimization of CdS thin films. However, the effects of the variables for the acidic CBD, especially, the dependence on cadmium salts, have not been investigated systematically. In this paper, we studied the growth process, structure, morphology and optical properties of CdS thin films deposited using different cadmium salts, which is helpful for the optimization of growth condition for high quality CdS thin films used in solar cells. Acidic CBD-CdS thin films were prepared by using different cadmium salts. A post-annealing process at 380 o C was used to improve crystal quality. The CdS-C i thin films have the highest deposition rate than other films obtained by different solution, which is due to an easier releasing rate for Cd(CH 3 COO) 2 than the CdCl 2 and CdSO 4 solutions. CdS-Cl i thin films have a relatively larger band gaps and better qualities. Strong PL spectra at room temperature confirm the good quality of the CdS thin films. - Abstract: CdS thin films were deposited from different cadmium salts by using acidic chemical bath deposition (CBD) process. Quality characterizations were performed using different methods such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL). The crystal quality of CdS thin films was improved after CdCl 2 thermal annealing at 380 o C. A compact structure of CdS thin films can be obtained by using CdCl 2 in comparison with the other cadmium salts. Although a Cd

  18. Grain Growth in Nanocrystalline Mg-Al Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kruska, Karen; Rohatgi, Aashish; Vemuri, Venkata Rama Ses; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.

    2017-10-05

    An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

  19. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    Directory of Open Access Journals (Sweden)

    Michael J. Brett

    2012-08-01

    Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

  20. Structural, Optical, and Morphological Properties of the Cadmium Oxide Thin Film Taif S. Almaadhede

    Directory of Open Access Journals (Sweden)

    Taif S. Almaadhede

    2018-04-01

    Full Text Available Cadmium oxide nanoparticles CdO NPS has been prepared by laser ablation in ethanol at 600 pulses and 600 mJ as laser energy. The structural, optical, and morphological properties of the cadmium oxide CdO thin film deposited on a glass substrate have been studied. X-ray diffrac-tometer (XRD 6000, Shimadzu, X-ray, diffractometer with Cukα radiation at a wavelength of ( = 0.154056 nm was utilized to investigate the structural properties of CdO NPs. The optical absorption of colloidal CdO NPs was measured using a spectrophotometer (Cary, 100 cans plus, UV-Vis-NIR, Split Beam Optics, Dual detectors in the range of (200–900 nm. The morpholo-gy of the CdO NPs was investigated by using AFM (AA 3000 Scanning Probe Microscope. The thickness of the films was measured using ellipsometer (Angstrom sun Technologies Ins.

  1. Morphology control in thin films of PS:PLA homopolymer blends by dip-coating deposition

    Energy Technology Data Exchange (ETDEWEB)

    Vital, Alexane [Interfaces, Confinement, Matériaux et Nanostructures (ICMN), CNRS-Université d’Orléans, UMR 7374, 1B Rue de la Férollerie, C.S. 40059, 45071 Orléans Cedex 2 (France); Groupe de recherches sur l’énergétique des milieux ionisés (GREMI), CNRS-Université d’Orléans, UMR 7344, 14 rue d' Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France); Vayer, Marylène [Interfaces, Confinement, Matériaux et Nanostructures (ICMN), CNRS-Université d’Orléans, UMR 7374, 1B Rue de la Férollerie, C.S. 40059, 45071 Orléans Cedex 2 (France); Tillocher, Thomas; Dussart, Rémi [Groupe de recherches sur l’énergétique des milieux ionisés (GREMI), CNRS-Université d’Orléans, UMR 7344, 14 rue d' Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France); Boufnichel, Mohamed [STMicroelectronics, 16, rue Pierre et Marie Curie, B.P. 7155, 37071 Tours Cedex 2 (France); and others

    2017-01-30

    Highlights: • A process to control the morphology of polymer blends thin film is described. • It is based on the use of dip-coating at various withdrawal speeds. • The process is examined within the capillary and the draining regimes. • The final dried morphology is controlled by the regime of deposition. • This study is of high interest for the preparation of advanced functional surfaces. - Abstract: In this work, smooth polymer films of PS, PLA and their blends, with thicknesses ranging from 20 nm up to 400 nm and very few defects on the surface were obtained by dip-coating. In contrast to the process of spin-coating which is conventionally used to prepare thin films of polymer blends, we showed that depending on the deposition parameters (withdrawal speed and geometry of the reservoir), various morphologies such as layered films and laterally phase-separated domains could be formed for a given blend/solvent pair, offering much more opportunities compared to the spin-coating process. This diversity of morphologies was explained by considering the superposition of different phenomena such as phase separation process, dewetting and vitrification in which parameters such as the drying time, the compatibility of the polymer/solvent pairs and the affinity of the polymer towards the interfaces were suspected to play a significant role. For that purpose, the process of dip-coating was examined within the capillary and the draining regimes (for low and high withdrawal speed respectively) in order to get a full description of the thickness variation and evaporation rate as a function of the deposition parameters.

  2. Morphology control in thin films of PS:PLA homopolymer blends by dip-coating deposition

    International Nuclear Information System (INIS)

    Vital, Alexane; Vayer, Marylène; Tillocher, Thomas; Dussart, Rémi; Boufnichel, Mohamed

    2017-01-01

    Highlights: • A process to control the morphology of polymer blends thin film is described. • It is based on the use of dip-coating at various withdrawal speeds. • The process is examined within the capillary and the draining regimes. • The final dried morphology is controlled by the regime of deposition. • This study is of high interest for the preparation of advanced functional surfaces. - Abstract: In this work, smooth polymer films of PS, PLA and their blends, with thicknesses ranging from 20 nm up to 400 nm and very few defects on the surface were obtained by dip-coating. In contrast to the process of spin-coating which is conventionally used to prepare thin films of polymer blends, we showed that depending on the deposition parameters (withdrawal speed and geometry of the reservoir), various morphologies such as layered films and laterally phase-separated domains could be formed for a given blend/solvent pair, offering much more opportunities compared to the spin-coating process. This diversity of morphologies was explained by considering the superposition of different phenomena such as phase separation process, dewetting and vitrification in which parameters such as the drying time, the compatibility of the polymer/solvent pairs and the affinity of the polymer towards the interfaces were suspected to play a significant role. For that purpose, the process of dip-coating was examined within the capillary and the draining regimes (for low and high withdrawal speed respectively) in order to get a full description of the thickness variation and evaporation rate as a function of the deposition parameters.

  3. Morphology, structure and optical properties of sol-gel ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stoica, T.F.; Teodorescu, V.S.; Blanchin, M.G.; Stoica, T.A.; Gartner, M.; Losurdo, M.; Zaharescu, M

    2003-08-15

    The alkoxidic route and the spinning deposition were used to prepare monolayer sol-gel indium tin oxide (ITO) films. The morphology and crystalline structure were investigated by cross-section transmission electron microscopy (XTEM) and atomic force microscopy (AFM). The ITO sol-gel mono-layer contains three regions of different porosities. The basic crystalline structure is that of the In{sub 2}O{sub 3} lattice. The optical properties have been studied by optical transmission and spectroscopic ellipsometry.

  4. Tailoring morphologies of diamond thin films for neural stem cells culturing

    Czech Academy of Sciences Publication Activity Database

    Babchenko, Oleg; Romanyuk, Nataliya; Jendelová, Pavla; Kromka, Alexander

    2013-01-01

    Roč. 250, č. 12 (2013), s. 2717-2722 ISSN 0370-1972 R&D Projects: GA ČR GAP108/12/0996; GA MŠk(CZ) LM2011026; GA ČR GAP108/10/1560 Institutional support: RVO:68378271 ; RVO:68378041 Keywords : diamond films morphology * surface treatment * neural stem cells * cells culturing Subject RIV: BO - Biophysics Impact factor: 1.605, year: 2013

  5. Post Deposition Annealing Effects on Optical, Electrical and Morphological Studies of ZnTTBPc Thin Films

    Directory of Open Access Journals (Sweden)

    B. R. Rejitha

    2012-01-01

    Full Text Available Phthalocyanines (Pcs act as efficient absorbants of photons in the visible region, specifically between 600 and 700 nm. It will produce an excited triplet state. In this paper we report the annealing effects of optical, electrical and surface morphological properties of thermal evaporated Zinc-tetra-tert-butyl-29H, 31H phthalocyanine (ZnTTBPc thin films. The optical transmittance measurements were done in the visible region (400-800 nm and, films were found to be absorbing in nature. From spectral data the absorption coefficient α, dielectric constant ε and the extinction coefficient k were evaluated and, results discussed. Also the optical band gap of the material was estimated. The activation energies were measured. Scanning electron microscopic studies was carried out to determine surface uniformity of films.

  6. Synthesis and thin film morphology of linear and cyclic poly(ɛ-caprolactone)

    Science.gov (United States)

    Bergeson, Amelia; Haque, Farihah; Kelly, Giovanni; Grayson, Scott; Albert, Julie

    Polymers have a wide variety of applications in the scientific community as well as everyday life. Poly(ɛ-caprolactone) (PCL), a semi-crystalline aliphatic polyester, has found important applications including drug delivery devices. The procedure for synthesizing linear PCL is well-documented and thus linear PCL has been studied in various systems, including bulk and thin films. On the other hand, the ability to synthesize cyclic PCL has only recently been developed. The synthesis of cyclic PCL from the linear analogue can be accomplished via click chemistry. Characterization of thin films of cyclic PCL via atomic force microscopy and optical microscopy produced novel results with respect to morphology and crystallization kinetics. These observations are not limited to the pure cyclic thin films, but also appear in various blends of linear and cyclic PCL.

  7. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  8. Surface morphology influence on deuterium retention in beryllium films prepared by thermionic vacuum arc method

    International Nuclear Information System (INIS)

    Anghel, A.; Porosnicu, C.; Badulescu, M.; Mustata, I.; Lungu, C.P.; Sugiyama, K.; Lindig, S.; Krieger, K.; Roth, J.; Nastuta, A.; Rusu, G.; Popa, G.

    2009-01-01

    In a plasma-confinement device, material eroded from plasma facing components will be transported and re-deposited at other locations inside the reaction chamber. Since beryllium from the first wall of the ITER fusion reactor will be eroded, ionized in the scrape-off layer plasma and finally re-deposited on divertor surfaces flowing along the magnetic field, it is important to study the properties of divertor armour materials (C, W) coated with beryllium. By applying different bias voltages (-200 V to +700 V) to the substrates during deposition, the morphology of the obtained films was modified. The films' morphology was characterized by means of AFM and SEM, and it was found that the coatings prepared using negative bias voltage at the substrate during deposition are more compact and have a smoother surface compared to the samples prepared with positive bias voltage. The thickness and composition of each film were measured using Rutherford backscattering spectrometry (RBS). A study of deuterium implantation and retention into the prepared films was performed at IPP Garching in the high current ion source.

  9. Tuning the morphology of metastable MnS films by simple chemical bath deposition technique

    Science.gov (United States)

    Dhandayuthapani, T.; Girish, M.; Sivakumar, R.; Sanjeeviraja, C.; Gopalakrishnan, R.

    2015-10-01

    In the present investigation, we have prepared the spherical particles, almond-like, and cauliflower-like morphological structures of metastable MnS films on glass substrate by chemical bath deposition technique at low temperature without using any complexing or chelating agent. The morphological change of MnS films with molar ratio may be due to the oriented aggregation of adjacent particles. The compositional purity of deposited film was confirmed by the EDAX study. X-ray diffraction and micro-Raman studies confirm the sulfur source concentration induced enhancement in the crystallization of films with metastable MnS phase (zinc-blende β-MnS, and wurtzite γ-MnS). The shift in PL emission peak with molar ratio may be due to the change in optical energy band gap of the MnS, which was further confirmed by the optical absorbance study. The paramagnetic behavior of the sample was confirmed by the M-H plot.

  10. Study of the morphology, thermal and mechanical properties of irradiated isotactic polypropylene films

    Energy Technology Data Exchange (ETDEWEB)

    Oliani, W.L., E-mail: washoliani@yahoo.com.b [Nuclear and Energy Research Institute-IPEN-CNEN/SP, Av. Professor Lineu Prestes 2242, 05508-000 Sao Paulo, SP (Brazil); Lima, L.F.C.P.; Parra, D.F.; Dias, D.B.; Lugao, A.B. [Nuclear and Energy Research Institute-IPEN-CNEN/SP, Av. Professor Lineu Prestes 2242, 05508-000 Sao Paulo, SP (Brazil)

    2010-03-15

    Thin films of isotactic polypropylene (iPP) are of great economical importance and their production is quite challenging due to the need of very fast uniaxial or biaxial expansion. During the expansion, critical problems usually arise, like structure disruption, shear thinning, causing material, energy and time losses. This work aims to study the surface morphology and compare the thermal, mechanical properties of PP films irradiated by gamma ray in an acetylene atmosphere after uniaxial expansion. PP films were made by compression molding at 190 deg. C with cooling in water at room temperature and irradiated by gamma ray, at (5, 12.5 and 20 kGy) under acetylene atmosphere. After irradiation the samples were submitted to thermal treatment at 90 deg. C for 1 h and then stretched out at 170 deg. C using an Instron machine. The surface of PP films, pristine and modified, (i.e., irradiated), was studied using optical microscopy (OM) and scanning electron microscopy (SEM). The changes in morphology, crystallinity and tensile parameters, like yield stress, rupture stress and elongation strain of the PP with irradiation dose were investigated. The results showed some evidences of gel formation due to crosslinking and/or long chain branching induced by radiation.

  11. Morphological, structural and optical properties of ZnO thin films deposited by dip coating method

    Energy Technology Data Exchange (ETDEWEB)

    Marouf, Sara; Beniaiche, Abdelkrim; Guessas, Hocine, E-mail: aziziamor@yahoo.fr [Laboratoire des Systemes Photoniques et Optiques Non Lineaires, Institut d' Optique et Mecanique de Precision, Universite Ferhat Abbas-Setif 1, Setif (Algeria); Azizi, Amor [Laboratoire de Chimie, Ingenierie Moleculaire et Nanostructures, Universite Ferhat Abbas-Setif 1, Setif (Algeria)

    2017-01-15

    Zinc oxide (ZnO) thin films were deposited on glass substrate by dip coating technique. The effects of sol aging time on the deposition of ZnO films was studied by using the field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and optical transmission techniques. The morphology of the films strongly depends on preparation route and deposition technique. It is noteworthy that films deposited from the freshly prepared solution feature indistinct characteristics; had relatively poor crystalline quality and low optical transmittance in the visible region. The increase in sol aging time resulted in a gradual improvement in crystallinity (in terms of peak sharpness and peak intensity) of the hexagonal phase for all diffraction peaks. Effect of sol aging on optical transparency is quite obvious through increased transmission with prolonged sol aging time. Interestingly, 72-168 h sol aging time was found to be optimal to achieve smooth surface morphology, good crystallinity and high optical transmittance which were attributed to an ideal stability of solution. These findings present a better-defined and more versatile procedure for production of clean ZnO sols of readily adjustable nanocrystalline size. (author)

  12. Solution Coating of Pharmaceutical Nanothin Films and Multilayer Nanocomposites with Controlled Morphology and Polymorphism.

    Science.gov (United States)

    Horstman, Elizabeth M; Kafle, Prapti; Zhang, Fengjiao; Zhang, Yifu; Kenis, Paul J A; Diao, Ying

    2018-03-28

    Nanosizing is rapidly emerging as an alternative approach to enhance solubility and thus the bioavailability of poorly aqueous soluble active pharmaceutical ingredients (APIs). Although numerous techniques have been developed to perform nanosizing of API crystals, precise control and modulation of their size in an energy and material efficient manner remains challenging. In this study, we present meniscus-guided solution coating as a new technique to produce pharmaceutical thin films of nanoscale thickness with controlled morphology. We demonstrate control of aspirin film thickness over more than 2 orders of magnitude, from 30 nm to 1.5 μm. By varying simple process parameters such as the coating speed and the solution concentration, the aspirin film morphology can also be modulated by accessing different coating regimes, namely the evaporation regime and the Landau-Levich regime. Using ellipticine-a poorly water-soluble anticancer drug-as another model compound, we discovered a new polymorph kinetically trapped during solution coating. Furthermore, the polymorphic outcome can be controlled by varying coating conditions. We further performed layer-by-layer coating of multilayer nanocomposites, with alternating thin films of ellipticine and a biocompatible polymer, which demonstrate the potential of additive manufacturing of multidrug-personalized dosage forms using this approach.

  13. Performances of screen-printing silver thick films: Rheology, morphology, mechanical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jung-Shiun; Liang, Jau-En; Yi, Han-Liou [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China); Chen, Shu-Hua [China Steel Corporation, Kaohsiung City 806, Taiwan, ROC (China); Hua, Chi-Chung, E-mail: chmcch@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China)

    2016-06-15

    Numerous recent applications with inorganic solar cells and energy storage electrodes make use of silver pastes through processes like screen-printing to fabricate fine conductive lines for electron conducting purpose. To date, however, there have been few studies that systematically revealed the properties of the silver paste in relation to the mechanical and electronic performances of screen-printing thick films. In this work, the rheological properties of a series of model silver pastes made of silver powders of varying size (0.9, 1.3, and 1.5 μm) and shape (irregular and spherical) were explored, and the results were systematically correlated with the morphological feature (scanning electron microscopy, SEM) and mechanical (peeling test) and electronic (transmission line method, TLM) performances of screen-printing dried or sintered thick films. We provided evidence of generally intimate correlations between the powder dispersion state in silver pastes—which is shown to be well captured by the rheological protocols employed herein—and the performances of screen-printing thick films. Overall, this study suggests the powder dispersion state and the associated phase behavior of a paste sample can significantly impact not only the morphological and electronic but also mechanical performances of screen-printing thick films, and, in future perspectives, a proper combination of silver powders of different sizes and even shapes could help reconcile quality and stability of an optimum silver paste. - Highlights: • Powder dispersion correlates well with screen-printing thick film performances. • Rheological fingerprints can be utilized to fathom the powder dispersion state. • Good polymer-powder interactions in the paste ensure good powder dispersion. • Time-dependent gel-like viscoelastic features are found with optimum silver pastes. • The size and shape of functional powder affect the dispersion and film performances.

  14. Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2014-07-01

    The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

  15. Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

    Science.gov (United States)

    Peiyu, JI; Jun, YU; Tianyuan, HUANG; Chenggang, JIN; Yan, YANG; Lanjian, ZHUGE; Xuemei, WU

    2018-02-01

    A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μm h‑1 at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H α radicals play an important role in the growth of DLC films. The results show that the H α radicals are beneficial to the formation and stabilization of C=C bond from sp2 to sp3.

  16. Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer

    International Nuclear Information System (INIS)

    Mori, M.; Akae, N.; Uotani, K.; Fujimoto, N.; Tambo, T.; Tatsuyama, C.

    2003-01-01

    AlSb is a more suitable material as buffer layers for the heteroepitaxial growth of InSb films on a Si(0 0 1) substrate than Ge. It reduces the large lattice mismatch of about 19.3% between Si and InSb to about 5.6%. The resistance of AlSb with stoichiometric composition is large enough for the measurement of electrical properties. InSb films grown on the AlSb/Si(0 0 1) substrates by the co-evaporation of elemental indium (In) and antimony (Sb) sources were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM), as a function of growth temperature. The thickness of grown InSb films was about 0.8-1.0 μm. The surface morphology and the crystal quality of the grown films strongly depend on growth temperature. It is found that the optimized growth temperature is about 300 deg. C to obtain the InSb films with smooth surface and good crystal quality

  17. Improved efficiency of the chemical bath deposition method during growth of ZnO thin films

    International Nuclear Information System (INIS)

    Ortega-Lopez, Mauricio; Avila-Garcia, Alejandro; Albor-Aguilera, M.L.; Resendiz, V.M. Sanchez

    2003-01-01

    Chemical bath deposition (CBD) is an inexpensive and low temperature method (25-90 deg. C) that allows to deposit large area semiconductor thin films. However, the extent of the desired heterogeneous reaction upon the substrate surface is limited first by the competing homogeneous reaction, which is responsible for colloidal particles formation in the bulk solution, and second, by the material deposition on the CBD reactor walls. Therefore, the CBD method exhibits low efficiency in terms of profiting the whole amount of starting materials. The present work describes a procedure to deposit ZnO thin films by CBD in an efficient way, since it offers the possibility to minimize both the undesirable homogeneous reaction in the bulk solution and the material deposition on the CBD reactor walls. In a first stage, zinc peroxide (ZnO 2 ) crystallizing with cubic structure is obtained. This compound shows a good average transparency (90%) and an optical bandgap of 4.2 eV. After an annealing process, the ZnO 2 suffers a transformation toward polycrystalline ZnO with hexagonal structure and 3.25 eV of optical bandgap. The surface morphology of the films, analyzed by atomic force microscope (AFM), reveals three-dimensional growth features as well as no colloidal particles upon the surface, therefore indicating the predominance of the heterogeneous reaction during the growth

  18. Diketopyrrolopyrrole-based polymer:fullerene nanoparticle films with thermally stable morphology for organic photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Holmes, Natalie P. [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics; Vaughan, Ben [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics; CSIRO Energy Technology, Newcastle (Australia); Williams, Evan L. [Inst. of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), Singapore (Singapore); Kroon, Renee [Univ. of South Australia, Mawson Lakes Campus, SA (Australia). Ian Wark Research Inst.; Chalmers Univ. of Technology, Goteborg (Sweden). Dept. of Chemical and Biological Engineering/Polymer Technology; Anderrson, Mats R. [Univ. of South Australia, Mawson Lakes Campus, SA (Australia). Ian Wark Research Inst.; Chalmers Univ. of Technology, Goteborg (Sweden). Dept. of Chemical and Biological Engineering/Polymer Technology; Kilcoyne, A. L. David [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Sonar, Prashant [Inst. of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), Singapore (Singapore); Queensland Univ. of Technology (QUT), Brisbane (Australia). School of Chemistry, Physics and Mechanical Engineering; Zhou, Xiaojing [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics; Dastoor, Paul C. [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics; Belcher, Warwick J. [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics

    2017-02-02

    Polymer:fullerene nanoparticles (NPs) offer two key advantages over bulk heterojunction (BHJ) films for organic photovoltaics (OPVs), water-processability and potentially superior morphological control. Once an optimal active layer morphology is reached, maintaining this morphology at OPV operating temperatures is key to the lifetime of a device. Here in this paper we study the morphology of the PDPP-TNT (poly{3,6-dithiophene-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-naphthalene}):PC71BM ([6,6]-phenyl C71 butyric acid methyl ester) NP system and then compare the thermal stability of NP and BHJ films to the common poly(3-hexylthiophene) (P3HT): phenyl C61 butyric acid methyl ester (PC61BM) system. We find that material Tg plays a key role in the superior thermal stability of the PDPP-TNT:PC71BM system; whereas for the P3HT:PC61BM system, domain structure is critical.

  19. DNA polymeric films as a support for cell growth as a new material for regenerative medicine: Compatibility and applicability.

    Science.gov (United States)

    Jayme, Cristiano Ceron; de Paula, Leonardo Barcelos; Rezende, Nayara; Calori, Italo Rodrigo; Franchi, Leonardo Pereira; Tedesco, Antonio Claudio

    2017-11-15

    DNA polymeric films (DNA-PFs) are a promising drug delivery system (DDS) in modern medicine. In this study, we evaluated the growth behavior of oral squamous cell carcinoma (OSCC) cells on DNA-PFs. The morphological, biochemical, and cytometric features of OSCC cell adhesion on DNA-PFs were also assessed. An initial, temporary alteration in cell morphology was observed at early time points owing to the inhibition of cell attachment to the film, which then returned to a normal morphological state at later time points. MTT and resazurin assays showed a moderate reduction in cell viability related to increased DNA concentration in the DNA-PFs. Flow cytometry studies showed low cytotoxicity of DNA-PFs, with cell viabilities higher than 90% in all the DNA-PFs tested. Flow cytometric cell cycle analysis also showed average cell cycle phase distributions at later time points, indicating that OSCC cell growth is maintained in the presence of DNA-PFs. These results show high biocompatibility of DNA-PFs and suggest their use in designing "dressing material," where the DNA film acts as a support for cell growth, or with incorporation of active or photoactive compounds, which can induce tissue regeneration and are useful to treat many diseases, especially oral cancer. Copyright © 2017 Elsevier Inc. All rights reserved.

  20. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

    2015-12-01

    Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  1. Influence of S/Mn molar ratio on the morphology and optical property of γ-MnS thin films prepared by microwave hydrothermal

    International Nuclear Information System (INIS)

    Yu, Xin; Li-yun, Cao; Jian-feng, Huang; Jia, Liu; Jie, Fei; Chun-yan, Yao

    2013-01-01

    Highlights: ► The influence of the precursor solution molar ratio of S/Mn. ► The degree of orientation of the γ-MnS film decrease slightly with increasing the S/Mn from 2.0 to 4.0. ► Film quality is strongly affected by the initial nucleation. ► The absorption edge obviously shifts to a higher wavelength with the increase of the S/Mn molar ratio from 2.0 to 4.0. - Abstract: Well crystallized γ-MnS thin films were successfully synthesized at low temperature and short processing time via a novel microwave hydrothermal (M-H) process without any complexing agent by using manganese chloride and thioacetamide as source materials. The influence of different S/Mn molar ratio in the precursor solution on the phase compositions, morphologies and optical properties of the as-deposited films was investigated. The as-deposited γ-MnS thin films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and ultraviolet–visible (UV–vis). Results show that the wurtzite phase γ-MnS thin films with good crystallization can be achieved when S/Mn molar ratio is controlled at 2.0–4.0. The deposited γ-MnS thin films exhibit (1 0 0) orientation growth with the thickness of 300–500 nm. With the increase of S/Mn molar ratio from 2.0 to 4.0, the orientation growth is weakened while the dense and uniform of the as-deposited γ-MnS thin films are obviously improved and the corresponding band gap of the thin films increase from 3.88 to 3.97 eV.

  2. Interfacial morphologies and growth modes of F.C.C. metallic crystals from liquid alloys

    International Nuclear Information System (INIS)

    Camel, Denis

    1980-01-01

    Equilibrium and growth morphologies of f.c.c. metallic crystals in contact with liquid alloys have been observed in-situ using transmission electron microscopy. These morphologies have been discussed in terms of atomic interfacial structure and growth mechanisms with the help of a statistical thermodynamic model which takes into account the effects of chemical interactions and interfacial adsorption. (author) [fr

  3. Structural, morphological, compositional and optical studies of plasma polymerized 2-furaldehyde amorphous thin films

    Science.gov (United States)

    Kabir, Humayun; Rahman, M. Mahbubur; Uddin, Kabir M.; Bhuiyan, A. H.

    2017-11-01

    Plasma synthesized 2-furaldehyde (PPFDH) amorphous polymer thin films of varying thicknesses were prepared in optimum conditions by a capacitively coupled parallel plate glow discharge reactor at room temperature. The structure, morphology, composition and optical properties of deposited PPFDH thin films have been investigated using X-Ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Scanning electron microscopy (SEM), Energy dispersive X-Ray spectroscopy (EDS), as well as Ultraviolet-visible (UV-vis) absorption spectroscopy. XRD results confirmed the amorphous nature of the films. The smooth and uniform nature of the PPFDH thin films were observed by SEM images. FTIR analyses of monomer FDH and PPFDH thin films show that structural rearrangement has occurred due to the synthesis process taking place in the chemical structure. IR stretching bands obtained from DFT calculations of the optimized structures of monomer and polymer of 2-furaldehyde are in good agreement with the experimental results. UV-vis absorption spectra in transmittance as well as reflectance mode was utilized to compute absorption coefficient, allowed direct and indirect transition energy gaps, band edge sharpness, Urbach energy, steepness parameter, extinction coefficient, and dispersion and oscillator energy. The oscillator strength, moments of optical spectra, refractive index at infinite wavelength, high frequency dielectric constant, average oscilator strength, complex refractive index, dissipation factor, optical conductivity and skin depth were also determined by using measured UV-vis transmittance and reflectance spectra.

  4. Morphology-tailored synthesis of tungsten trioxide (hydrate) thin films and their photocatalytic properties.

    Science.gov (United States)

    Jiao, Zhihui; Wang, Jinmin; Ke, Lin; Sun, Xiao Wei; Demir, Hilmi Volkan

    2011-02-01

    Tungsten trioxide hydrate (3WO(3)·H(2)O) films with different morphologies were directly grown on fluorine doped tin oxide (FTO) substrate via a facile crystal-seed-assisted hydrothermal method. Scanning electron microscopy (SEM) analysis showed that 3WO(3)·H(2)O thin films composed of platelike, wedgelike, and sheetlike nanostructures could be selectively synthesized by adding Na(2)SO(4), (NH(4))(2)SO(4), and CH(3)COONH(4) as capping agents, respectively. X-ray diffraction (XRD) studies indicated that these films were of orthorhombic structure. The as-prepared thin films after dehydration showed obvious photocatalytic activities. The best film grown using CH(3)COONH(4) as a capping agent generated anodic photocurrents of 1.16 mA/cm(2) for oxidization of methanol and 0.5 mA/cm(2) for water splitting with the highest photoconversion efficiency of about 0.3% under simulated solar illumination.

  5. Morphological, structural and optical properties of MEH-PPV: PC70BM nanocomposite film

    Science.gov (United States)

    Mhamdi, Asya; Sweii, Fatma ben Slama; Saidi, Hamza; Saidi, Faouzi; Bouazizi, Abdelaziz

    2018-05-01

    In this report, the influence of annealing temperature and spin coating speed on the structural and morphological properties of a blend of poly (2-methoxy-5-(2-ethyl-oxy)-p-phenylene-vinylene) (MEH-PPV) and [6-6]-phenyl-C71-butyric acid methyl ester (PC70BM) layer has been investigated. The photoactive layer (MEH-PPV: PC70BM) was deposited on ZnO film deposited on top of indium tin oxide (ITO) substrate by spin-coating. The effect of spin coating speed via atomic force microscope (AFM) leads to conclude that high speed is favorable for a good homogeneity of the film surface and good aggregates dispersion. The optimized structure was studied by varying the annealing temperatures using X-ray diffraction (XRD). The XRD analysis indicates that annealing treatment promoted the ordered aggregation and crystallization of MEH-PPV: PC70BM films. Indeed, the blend ratio effect on the optical properties of MEH-PPV: PC70BM thin film was investigated. While, the effect of incorporation of PC70BM on the optical properties was studied using UV-Vis and photoluminescence (PL) measurement. We conclude that MEH-PPV: PC70BM (1:3) film leads to high charge transfer rate.

  6. Morphology, molecular dynamics and electric conductivity of carbohydrate polymer films based on alginic acid and benzimidazole.

    Science.gov (United States)

    Rachocki, Adam; Pogorzelec-Glaser, Katarzyna; Pawlaczyk, Czesław; Tritt-Goc, Jadwiga

    2011-12-13

    The present paper describes a preparation method and molecular investigations of new biodegradable proton-conducting carbohydrate polymer films based on alginic acid and benzimidazole. Electric conductivity was studied in a wide temperature range in order to check the potential application of these compounds as membranes for electrochemical devices. Compared to pure alginic acid powder or its film, the biodegradable film of alginic acid with an addition of benzimidazole exhibits considerably higher conductivity in the range above water boiling temperature (up to approximately 10(-3) S/cm at 473 K). Due to this important feature the obtained films can be considered as candidates for application in high-temperature electrochemical devices. The microscopic nature and mechanism of the conduction in alginate based materials were studied by proton nuclear magnetic resonance (NMR). The results show specific changes in morphology and molecular dynamics between pure alginate powders and the films obtained without and with the addition of benzimidazole molecules. Copyright © 2011 Elsevier Ltd. All rights reserved.

  7. Ultra-high wear resistance of ultra-nanocrystalline diamond film: Correlation with microstructure and morphology

    Science.gov (United States)

    Rani, R.; Kumar, N.; Lin, I.-Nan

    2016-05-01

    Nanostructured diamond films are having numerous unique properties including superior tribological behavior which is promising for enhancing energy efficiency and life time of the sliding devices. High wear resistance is the principal criterion for the smooth functioning of any sliding device. Such properties are achievable by tailoring the grain size and grain boundary volume fraction in nanodiamond film. Ultra-nanocrystalline diamond (UNCD) film was attainable using optimized gas plasma condition in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. Crystalline phase of ultra-nanodiamond grains with matrix phase of amorphous carbon and short range ordered graphite are encapsulated in nanowire shaped morphology. Film showed ultra-high wear resistance and frictional stability in micro-tribological contact conditions. The negligible wear of film at the beginning of the tribological contact was later transformed into the wearless regime for prolonged sliding cycles. Both surface roughness and high contact stress were the main reasons of wear at the beginning of sliding cycles. However, the interface gets smoothened due to continuous sliding, finally leaded to the wearless regime.

  8. Influence of Heat Treatment on the Morphologies of Copper Nanoparticles Based Films by a Spin Coating Method

    Directory of Open Access Journals (Sweden)

    Wei Liu

    2017-01-01

    Full Text Available We have investigated the influence of heat treatment on the morphologies of copper nanoparticles based films on glass slides by a spin coating method. The experiments show that heat treatment can modify the sizes and morphologies of copper nanoparticles based films on glass slides. We suggest that through changing the parameters of heat treatment process may be helpful to vary the scattering and absorbing intensity of copper nanoparticles when used in energy harvesting/conversion and optical devices.

  9. Hevea brasiliensis natural rubber latex film vulcanization by gamma radiation containing n-butyl acrylate: properties and morphology

    International Nuclear Information System (INIS)

    Rodrigues, Ana Paula Pinho; Barros, Glaucione Gomes de

    1997-01-01

    Radiation vulcanization of natural rubber latex (RVNRL) in the presence of n-butyl acrylate (n-Ba) as sensitizer was carried out. The RVNRL films were investigated with respect to their thermal properties and morphology. The films presented two T g values obtained by DSC which were identified as due to linear and crosslinked domains. The thermal stability of the material was similar to that of linear material rubber. The morphology showed smooth regular surface characteristic of homogeneous phase domains. (author)

  10. Controlled deposition of highly ordered soluble acene thin films: effect of morphology and crystal orientation on transistor performance.

    Science.gov (United States)

    Sele, Christoph W; Kjellander, B K Charlotte; Niesen, Bjoern; Thornton, Martin J; van der Putten, J Bas P H; Myny, Kris; Wondergem, Harry J; Moser, Armin; Resel, Roland; van Breemen, Albert J J M; van Aerle, Nick; Heremans, Paul; Anthony, John E; Gelinck, Gerwin H

    2009-12-28

    Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to produce a range of morphologies, including oriented needle-like crystals. Structural characterization as well as electrical transistor measurements show that intermediate drying velocities produce the most uniformly aligned films. Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Edible films developed from carboxylic acid cross-linked sesame protein isolate: barrier, mechanical, thermal, crystalline and morphological properties.

    Science.gov (United States)

    Sharma, Loveleen; Sharma, Harish Kumar; Saini, Charanjiv Singh

    2018-02-01

    Films were developed from sesame protein crosslinked with three different carboxylic acids (malic acid, citric acid and succinic acid) at 1, 3 and 5% (w/w, on protein isolate basis). The effect of crosslinking on physical, mechanical, thermal and morphological properties was studied. Succinic acid crosslinked films exhibited least water vapor permeability the highest tensile strength and overall showed superlative properties among other films. X-ray diffraction showed single main crystalline reflection at 20° indicating amorphous structure of films. DSC curves of films indicated single melting peak in the range of 103-161 °C. All films exhibited weight loss in three stages. FTIR exhibited peak at 1700 cm -1 confirming crosslinking reaction between carboxylic acids and protein. Crosslinked films were compact, nonporous and smooth as compared to film from native sesame protein isolate.

  12. The effect of different thickness alumina capping layers on the final morphology of dewet thin Ni films

    Science.gov (United States)

    White, Benjamin C.; Behbahanian, Amir; Stoker, T. McKay; Fowlkes, Jason D.; Hartnett, Chris; Rack, Phillip D.; Roberts, Nicholas A.

    2018-03-01

    Nanoparticles on a substrate have numerous applications in nanotechnology, from enhancements to solar cell efficiency to improvements in carbon nanotube growth. Producing nanoparticles in a cost effective fashion with control over size and spacing is desired, but difficult to do. This work presents a scalable method for altering the radius and pitch distributions of nickel nanoparticles. The introduction of alumina capping layers to thin nickel films during a pulsed laser-induced dewetting process has yielded reductions in the mean and standard deviation of radii and pitch for dewet nanoparticles with no noticeable difference in final morphology with increased capping layer thickness. The differences in carbon nanotube mats grown, on the uncapped sample and one of the capped samples, is also presented here, with a more dense mat being present for the capped case.

  13. Misorientation characteristics of penetrating morphologies at the growth front of abnormally growing grains in aluminum alloy

    Science.gov (United States)

    Park, Chang-Soo; Na, Tae-Wook; Park, Hyung-Ki; Kim, Dong-Kyun; Han, Chan-Hee; Hwang, Nong-Moon

    2012-07-01

    The initial stage of abnormal grain growth of the aluminum alloy 5052 has been investigated using electron back-scattered diffraction to analyze the characteristic of misorientations of the penetrating morphology at the growth front. Among the 84 penetrating morphologies examined, none of the penetrated grain boundaries has low angles or coincidence site lattice (CSL) relations, whereas 66 penetrating grain boundaries have low angles or CSL relations. These results strongly suggest that the penetrating morphologies should result from triple-junction wetting.

  14. Novel multiform morphologies of hydroxyapatite: Synthesis and growth mechanism

    Science.gov (United States)

    Mary, I. Reeta; Sonia, S.; Viji, S.; Mangalaraj, D.; Viswanathan, C.; Ponpandian, N.

    2016-01-01

    Morphological evolution of materials becomes a prodigious challenge due to their key role in defining their functional properties and desired applications. Herein, we report the synthesis of hydroxyapatite (HAp) microstructures with multiform morphologies, such as spheres, cubes, hexagonal rods and nested bundles constructed from their respective nanoscale building blocks via a simple cost effective hydro/solvothermal method. A possible formation mechanism of diverse morphologies of HAp has been presented. Structural analysis based on X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy confirms the purity of the HAp microstructures. The multiform morphologies of HAp were corroborated by using Field emission scanning electron microscope (FESEM).

  15. Electrical and Morphological Properties of Inkjet Printed Pedot/PSS Films

    Energy Technology Data Exchange (ETDEWEB)

    Garnett, E.; Ginley, D.

    2005-01-01

    Organic solar cells and LEDs are becoming more popular because their low cost materials, potential manufacturability, and recent gains in efficiency make them feasible for widespread commercialization in the near future. One significant manufacturing problem, especially for OLEDs, is the cost associated with creating patterned devices with spatially non-specific deposition methods such as spincoating. Inkjet printing can remove this problem. In recent years, inkjet printed polyethylene(3,4-dioxythiophene)/ polystyrene sulfonate (PEDOT/PSS) has been incorporated into many organic devices to help charge transfer, but there has not been much research regarding the effect of different printing parameters on the electrical and morphological film properties. In this work, an atomic force microscope, four point probe, and Kelvin probe were used to study the effects of printing parameters on roughness, conductivity and workfunction. Inkjet printed PEDOT films were also compared to spincoated films to determine how the polymer deposition method affects the above properties. Generally, inkjet printing created rougher but more conductive films with a smaller workfunction. Additionally, it was demonstrated that the workfunction of PEDOT films could be tuned over a range of about 0.5 V by changing the solvent mixture or substrate surface pretreatment. All additives to the as received PEDOT/PSS suspension caused the workfunction to decrease. It was discovered that workfunction decreases as printing voltage increases, but the trend reverses after annealing the films. This phenomenon suggests that when DMSO interacts with PEDOT, the workfunction changes. Finally, the results support previous publications suggesting that DMSO increases conductivity through a screening effect and also by changing the distribution of PEDOT and PSS in the film.

  16. Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD

    Directory of Open Access Journals (Sweden)

    Budi Mulyanti

    2008-09-01

    Full Text Available In this paper, the growth of GaN:Mn thin films by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD method is reported. The method used in this study, utilizes a microwave cavity as a cracking cell to produce nitrogen radicals, which in turn reduce the growth temperature. Trimethylgallium (TMGa, nitrogen (N2 and cyclopentadienyl manganese tricarbonyl (CpMnT were used as a source of Ga, N and Mn, respectively, while hydrogen gas was used as a carrier gas for both TMGa and CpMnT. The effect of growth temperature and Mn incorporation on structural properties and surface morphology of GaN:Mn films are presented. The growth of GaN:Mn thin films were conducted at varied growth temperature in range of 625 oC to 700 oC and the Mn/Ga molar fraction in the range of 0.2 to 0.5. Energy dispersive of X-ray (EDX and X-ray diffraction (XRD methods were used to analyze atomic composition and crystal structure of the grown films, respectively. The surface morphology was then characterized using both atomic force microscopy (AFM and scanning electron microscopy (SEM images. A systematic XRD analysis reveal that maximum Mn incorporation that still produces single phase GaN:Mn (0002 is 6.4 % and 3.2 % for the film grown at 650 oC and 700 oC, respectively. The lattice constant and full width at half maximum (FWHM of the single phase films depend on the Mn concentration. The decrease in lattice constant accompanied by the increase in FWHM is due to incorporation of substitutional Mn on the Ga sub-lattice. The maximum values of doped Mn atoms incorporated in the wurtzite structure of GaN:Mn as substitutional atoms on Ga sub-lattice are 2.0 % and 2.5 % at 650 oC and 700 oC, respectively. AFM and SEM images show that the film grown at lower growth temperature and Mn concentration has a better surface than that of film grown at higher growth temperature and Mn concentration.

  17. Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

    KAUST Repository

    García-Cerda, L. A.

    2010-03-01

    In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.

  18. Nanoscale size effects on the mechanical properties of platinum thin films and cross-sectional grain morphology

    KAUST Repository

    Abbas, K

    2015-12-10

    © 2016 IOP Publishing Ltd. The mechanical behavior of polycrystalline Pt thin films is reported for thicknesses of 75 nm, 100 nm, 250 nm, and 400 nm. These thicknesses correspond to transitions between nanocrystalline grain morphology types as found in TEM studies. Thinner samples display a brittle behavior, but as thickness increases the grain morphology evolves, leading to a ductile behavior. During evolution of the morphology, dramatic differences in elastic moduli (105-160 GPa) and strengths (560-1700 MPa) are recorded and explained by the variable morphology. This work suggests that in addition to the in-plane grain size of thin films, the transitions in cross-sectional morphologies of the Pt films significantly affect their mechanical behavior.

  19. Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

    2016-10-01

    TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

  20. Surface morphology of vacuum-evaporated pentacene film on Si substrate studied by in situ grazing-incidence small-angle X-ray scattering: I. The initial stage of formation of pentacene film

    Science.gov (United States)

    Hirosawa, Ichiro; Watanabe, Takeshi; Koganezawa, Tomoyuki; Kikuchi, Mamoru; Yoshimoto, Noriyuki

    2018-03-01

    The progress of the surface morphology of a growing sub-monolayered pentacene film on a Si substrate was studied by in situ grazing-incidence small angle X-ray scattering (GISAXS). The observed GISAXS profiles did not show sizes of pentacene islands but mainly protuberances on the boundaries around pentacene film. Scattering of X-ray by residual pits in the pentacene film was also detected in the GISAXS profiles of an almost fully covered film. The average radius of pentacene protuberances increased from 13 to 24 nm as the coverage increased to 0.83 monolayer, and the most frequent radius was almost constant at approximately 9 nm. This result suggests that the population of larger protuberances increase with increasing lengths of boundaries of the pentacene film. It can also be considered that the detected protuberances were crystallites of pentacene, since the average size of protuberances was nearly equal to crystallite sizes of pentacene films. The almost constant characteristic distance of 610 nm and amplitudes of pair correlation functions at low coverages suggest that the growth of pentacene films obeyed the diffusion-limited aggregation (DLA) model, as previously reported. It is also considered that the sites of islands show a triangular distribution for small variations of estimated correlation distances.

  1. Buckyball microwave plasmas: Fragmentation and diamond-film growth

    International Nuclear Information System (INIS)

    Gruen, D.M.; Liu, Shengzhong; Krauss, A.R.; Pan, Xianzheng.

    1993-08-01

    Microwave discharges (2.45 GHz) have been generated in C 60 -containing Ar produced by flowing Ar over fullerene-containing soot. Optical spectroscopy shows that the spectrum is dominated by the d 3 Πg-a 3 Πu Swan bands of C 2 and particularly the Δv = -2, -1, 0, +1, and +2 sequences. These results give direct evidence that C 2 is one of the products of C 60 fragmentation brought about, at least in part, by collisionally induced dissociation (CID). C 60 has been used as a precursor in a plasma-enhanced chemical vapor deposition (PECVD) experiment to grow diamond-thin films. The films, grown in an Ar/H 2 gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H 2 , 1500 W, 850 degree C substrate temperature), were characterized with SEM, XRD, and Raman spectroscopy. Growth rate was found to be ∼ 0.6 μ/hr. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor, would be predicted at a carbon content of 1% based on C 60 . Energetic and mechanistic arguments are advanced to rationalize this result based on C 2 as the growth species

  2. GaSb film growth by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Cruz, M.L.; Martinez-Juarez, J.; Lopez-Salazar, P. [CIDS-ICUAP, BUAP, Av. 14 Sur y San Claudio, C.U. Edif.103C, Col. Sn Manuel, C.P. 72570, Puebla, Pue. (Mexico); Diaz, G.J. [Centro de Investigacion y Estudios Avanzados, IPN, Av. IPN 2508, Col. Sn. Pedro Zacatenco, C.P. 07360, D.F. (Mexico)

    2010-04-15

    Doped GaSb (Gallium Antimonide) films on p-GaSb substrates have been obtained by means of a low-cost and fast-growth method: the liquid phase epitaxy (LPE) technique. The growth temperature was 400 C, and the growth time was varied between1 and 5 min. Characterization of the films was performed by means of high resolution X-ray Diffraction, low temperature-photoluminescence and current-voltage curve measurements. The X-ray diffraction pattern confirms a zincblende-type crystal structure with a high-thin peak centred at 30.36 . The PL spectra at 27 K allowed to confirm the band-gap energy to be 0.8 eV and the I-V curves presented a PN junction behavior which corresponds to the obtained structured. Metal contacts of Au-Zn and Au-Ge were placed to perform electrical characterization (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Growth of HfN thin films by reactive high power impulse magnetron sputtering

    Directory of Open Access Journals (Sweden)

    D. Ö. Thorsteinsson

    2018-03-01

    Full Text Available Thin hafnium nitride films were grown on SiO2 by reactive high power impulse magnetron sputtering (HiPIMS and reactive direct current magnetron sputtering (dcMS. The conditions during growth were kept similar and the film properties were compared as growth temperature, nitrogen flow rate, and in the case of HiPIMS, duty cycle were independently varied. The films were characterized with grazing incidence X-ray diffraction (GIXRD, X-ray reflection (XRR and X-ray stress analysis (XSA. HiPIMS growth had a lower growth rate for all grown films, but the films surfaces were smoother. The film density of HiPIMS deposited films grown at low duty cycle was comparable to dcMS grown films. Increasing the duty cycle increased the density of the HiPIMS grown films almost to the bulk density of HfN as well as increasing the growth rate, while the surface roughness did not change significantly. The HiPIMS grown films had large compressive stress while the dcMS grown films had some tensile stress. The dcMS grown films exhibit larger grains than HiPIMS grown films. The grain size of HiPIMS grown films decreases with increasing nitrogen flow rate, while the dcMS grain size increased with increasing nitrogen flow rate. This work shows that duty cycle during HiPIMS growth of HfN films has a significant effect on the film density and growth rate while other film properties seem mostly unaffected.

  4. Growth and properties of ZnO films on polymeric substrate by spray pyrolysis method

    International Nuclear Information System (INIS)

    Kriisa, Merike; Kärber, Erki; Krunks, Malle; Mikli, Valdek; Unt, Tarmo; Kukk, Mart; Mere, Arvo

    2014-01-01

    The growth of ZnO layers deposited by spray pyrolysis on polymeric substrate was studied. Zinc acetate precursor solution was sprayed onto preheated polyimide (PI) and glass reference substrates at 380 °C. The structural, morphological, optical and electrical properties of the layers were measured by X-ray diffraction, scanning electron microscopy, optical spectroscopy and van der Pauw and Hall method. ZnO:In layers could be grown on PI when deposited onto undoped ZnO layer acting as a buffer layer on PI. Independent of the substrate type, the ZnO/ZnO:In bilayer showed a mixed morphology from smooth canvas-like surface to large scrolled belt grains dependent on buffer layer morphology. Due to the formation of scrolled belts, the ZnO:In layer shows no preferential orientation, yet the preferred orientation of the ZnO buffer crystallites is (100) plane parallel to the substrate. The bilayers deposited on PI exhibit high light scattering capability (haze factor of 85–95% in the spectral region of 350–1500 nm). The resistivity of the ZnO:In film in bilayer on PI is 4.4 × 10 −2 Ω cm mainly due to low carrier mobility of 1.5 cm 2 /Vs, the carrier concentration is 10 20 cm −3 . - Highlights: • ZnO:In layers were grown on polyimide substrate by spray pyrolysis. • The buffer layer morphology is controlled by the layer thickness and spray rate. • ZnO/ZnO:In bilayer morphology is dependent on the surface of buffer layer. • Rough buffer layer leads to rough bilayer with scrolled belts (diameter of 2–6 μm). • Due to scrolled belts layers show no preferential growth yet highly scatter light

  5. Oxygen-dependent epitaxial growth of Pt(001) thin films on MgO(001) by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, X.Y., E-mail: qxy2001@swu.edu.cn [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Wang, R.X.; Li, G.Q.; Zhang, T.; Li, L.T.; Wei, M.L.; Meng, X.S. [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Ji, H. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan (China); Zhang, Z.; Chan, C.H.; Dai, J.Y. [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China)

    2017-06-01

    Highlights: • The optimized oxygen ratio for high-quality epitaxial Pt (001) thin films is 15%. • Platinum oxides is formed after the oxygen ratio is more than 30%. • Epitaxial growth of Pt on MgO(001) is cube to cube with Pt(001)//MgO(001). - Abstract: The roles of oxygen gas in crystal orientation, surface morphology and electrical resistivity of Pt thin films grown on MgO(001) substrate by magnetron sputtering are studied. With a well-controlled oxygen ratio (15% oxygen) during sputtering deposition with Ar-O{sub 2} mixture ambient, (001) epitaxial growth of Pt film on MgO substrate is achieved with an epitaxial orientation relationship of (001)Pt//(001)MgO and [100]Pt//[100]MgO. Microstructural and electrical characterizations reveal that the (001) Pt thin films possess very smooth surface and good conductivity. The formation and subsequent decomposition of platinum oxides in the Pt films grown with more than 30% oxygen result in an increase of surface roughness and electrical resistivity. The high-quality Pt(001) film has large potential for integrated electronic device applications.

  6. Growth, surface treatment and characterization of polycrystalline lead iodide thick films prepared using close space deposition technique

    International Nuclear Information System (INIS)

    Zhu, Xinghua; Sun, Hui; Yang, Dingyu; Zheng, Xiaolin

    2012-01-01

    Lead iodide (PbI 2 ) polycrystalline thick films were fabricated on glass substrates with a conductive indium–tin-oxide layer using a close space deposition technique. The morphology of the as-deposited PbI 2 films is typically and highly oriented polycrystalline structure, made up of microcrystal platelets upright on the substrate plane. Two techniques including the surface mechanical cutting and after-growth cadmium telluride coating were employed to improve the films′ surface properties. It was shown that both of the film surface treatment methods markedly decreased the dark current of PbI 2 films. The photo-to-dark current ratio of about 2.05 under 241 Am γ-ray source with activity of 2.78 μCi irradiation was obtained from the film treated using both surface cutting and after-growth CdTe coating. Charge transport characteristics of these films were measured and the hole mobility 7.7×10 −2 –1.67×10 −1 cm 2 /V s was estimated.

  7. Systematic study of influence of growth parameters on island morphology during molecular beam epitaxy growth: A Monte Carlo study

    International Nuclear Information System (INIS)

    Shankar Prasad Shrestha; Park, C.-Y.

    2006-05-01

    We have made a systematic study of influence of diffusion flux ratio (D/F), diffusional anisotropy (DA) and sticking anisotropy (SA) on island morphology to show the influence of each growth parameter on island morphology in presence of the other growth parameters. Our results show that the influence of D/F ratio and DA on island morphology depends on the sticking anisotropy of the adatoms. At the intermediate anisotropic case, increase in D/F ratio results in transition of the island morphology from 1d nature to 2 d nature. In anisotropic diffusion case, D/F ratio can change the growth direction of the island morphology. We also find that only sticking anisotropy is not sufficient to produce elongated islands, low D/F ratio is also essential. (author)

  8. EFFECT OF SODIUM DODECYLBENZENESULFONIC ACID (SDBS ON THE GROWTH RATE AND MORPHOLOGY OF BORAX CRYSTAL

    Directory of Open Access Journals (Sweden)

    Suharso Suharso

    2010-06-01

    Full Text Available An investigation of the effect of sodium dodecylbenzenesulfonic acid (SDBS on both growth rate and morphology of borax crystal has been carried out.  This experiment was carried out at temperature of 25 °C and relative supersaturation of 0.21 and 0.74 under in situ cell optical microscopy method.  The result shows that SDBS inhibits the growth rate and changes the morphology of borax crystal.   Keywords: Borax; growth rate; crystallization, SDBS

  9. Controlled deposition of highly ordered soluble acene thin films: effect of morphology and crystal orientation on transistor performance

    NARCIS (Netherlands)

    Sele, C.W.; Kjellander, B.K.C.; Niesen, B.; Thornton, M.J.; Putten, J.B.P.H. van der; Myny, K.; Wondergem, H.J.; Moser, A.; Resel, R.; Breemen, A.J.J.M. van; Aerle, N.A.J.M. van; Heremans, P.; Anthony, J.E.; Gelinck, G.H.

    2009-01-01

    (Figure Presented) Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to produce a range of morphologies, including

  10. Metal Chloride Induced Formation of Porous Polyhydroxybutyrate (PHB) Films: Morphology, Thermal Properties and Crystallinity

    Science.gov (United States)

    Tan, W. L.; Yaakob, N. N.; Zainal Abidin, A.; Abu Bakar, M.; Abu Bakar, N. H. H.

    2016-06-01

    Polyhydroxybutyrate (PHB) films with highly porous structures were synthesized using a one phase system comprising of metal chloride/methanol/PHB/chloroform (MCl2/CH3OH/PHB/CHCl3). SEM analyses confirmed that the MCl2 (where M = Cu2+ or Ni2+) induced porous structures with pore sizes ranging from 0.3 - 2.0 μm. The average pore size increased with the increasing MCl2 content. There existed weak physical interactions between the PHB chains and MCl2 as revealed by FTIR and NMR spectroscopies. The residue of MCl2 in the porous PHB film does not exert significant influence on the thermal stability of PHB. Nevertheless, the crystallinity of the prepared film is enhanced, as MCl2 acts as the nucleation sites to promote the growth of spherullites.

  11. A nonlinear model for surface segregation and solute trapping during planar film growth

    International Nuclear Information System (INIS)

    Han, Xiaoying; Spencer, Brian J.

    2007-01-01

    Surface segregation and solute trapping during planar film growth is one of the important issues in molecular beam epitaxy, yet the study on surface composition has been largely restricted to experimental work. This paper introduces some mathematical models of surface composition during planar film growth. Analytical solutions are obtained for the surface composition during growth

  12. Existence of thickness threshold for crystal growth rate of ascorbic acid from its thin solution film

    Science.gov (United States)

    Yamazaki, Yoshihiro; Yoshino, Hiroki; Kikuchi, Mitsunobu; Kashiwase, Sakiko

    2017-06-01

    Growth rate of ascorbic acid crystal domains from its aqueous solution film depends on the film thickness. Existence of a thickness threshold is experimentally confirmed below which growth rate becomes quite low and is considered to almost stop. This threshold is one of the essential factors for the dynamical transition between uniform and rhythmic growth modes.

  13. Crystallographic Textures and Morphologies of Solution Cast Ibuprofen Composite Films at Solid Surfaces

    Science.gov (United States)

    2014-01-01

    The preparation of thin composite layers has promising advantages in a variety of applications like transdermal, buccal, or sublingual patches. Within this model study the impact of the matrix material on the film forming properties of ibuprofen–matrix composite films is investigated. As matrix materials polystyrene, methyl cellulose, or hydroxyl-ethyl cellulose were used. The film properties were either varied by the preparation route, i.e., spin coating or drop casting, or via changes in the relative ratio of the ibuprofen and the matrix material. The resulting films were investigated via X-ray diffraction and atomic force microscope experiments. The results show that preferred (100) textures can be induced via spin coating with respect to the glass surface, while the drop casting results in a powder-like behavior. The morphologies of the films are strongly impacted by the ibuprofen amount rather than the preparation method. A comparison of the various matrix materials in terms of their impact on the dissolution properties show a two times faster zero order release from methyl cellulose matrix compared to a polystyrene matrix. The slowest rate was observed within the hydroxyl ethyl cellulose as the active pharmaceutical ingredients (APIs) release is limited by diffusion through a swollen matrix. The investigation reveals that the ibuprofen crystallization and film formation is only little effected by the selected matrix material than that compared to the dissolution. A similar experimental approach using other matrix materials may therefore allow to find an optimized composite layer useful for a defined application. PMID:25275801

  14. Electrochemical, morphological and microstructural characterization of carbon film resistor electrodes for application in electrochemical sensors

    International Nuclear Information System (INIS)

    Gouveia-Caridade, Carla; Soares, David M.; Liess, Hans-Dieter; Brett, Christopher M.A.

    2008-01-01

    The electrochemical and microstructural properties of carbon film electrodes made from carbon film electrical resistors of 1.5, 15, 140 Ω and 2.0 kΩ nominal resistance have been investigated before and after electrochemical pre-treatment at +0.9 V vs SCE, in order to assess the potential use of these carbon film electrodes as electrochemical sensors and as substrates for sensors and biosensors. The results obtained are compared with those at electrodes made from previously investigated 2 Ω carbon film resistors. Cyclic voltammetry was performed in acetate buffer and phosphate buffer saline electrolytes and the kinetic parameters of the model redox system Fe(CN) 6 3-/4- obtained. The 1.5 Ω resistor electrodes show the best properties for sensor development with wide potential windows, similar electrochemical behaviour to those of 2 Ω and close-to-reversible kinetic parameters after electrochemical pre-treatment. The 15 and 140 Ω resistor electrodes show wide potential windows although with slower kinetics, whereas the 2.0 kΩ resistor electrodes show poor cyclic voltammetric profiles even after pre-treatment. Electrochemical impedance spectroscopy related these findings to the interfacial properties of the electrodes. Microstructural and morphological studies were carried out using contact mode Atomic Force Microscopy (AFM), Confocal Raman spectroscopy and X-ray diffraction. AFM showed more homogeneity of the films with lower nominal resistances, related to better electrochemical characteristics. X-ray diffraction and Confocal Raman spectroscopy indicate the existence of a graphitic structure in the carbon films

  15. Tuning the Morphology of Solution-Sheared P3HT:PCBM Films.

    Science.gov (United States)

    Reinspach, Julia A; Diao, Ying; Giri, Gaurav; Sachse, Torsten; England, Kemar; Zhou, Yan; Tassone, Christopher; Worfolk, Brian J; Presselt, Martin; Toney, Michael F; Mannsfeld, Stefan; Bao, Zhenan

    2016-01-27

    Organic bulk heterojunction (BHJ) solar cells are a promising alternative for future clean-energy applications. However, to become attractive for consumer applications, such as wearable, flexible, or semitransparent power-generating electronics, they need to be manufactured by high-throughput, low-cost, large-area-capable printing techniques. However, most research reported on BHJ solar cells is conducted using spin coating, a single batch fabrication method, thus limiting the reported results to the research lab. In this work, we investigate the morphology of solution-sheared films for BHJ solar cell applications, using the widely studied model blend P3HT:PCBM. Solution shearing is a coating technique that is upscalable to industrial manufacturing processes and has demonstrated to yield record performance organic field-effect transistors. Using grazing incident small-angle X-ray scattering, grazing incident wide-angle X-ray scattering, and UV-vis spectroscopy, we investigate the influence of solvent, film drying time, and substrate temperature on P3HT aggregation, conjugation length, crystallite orientation, and PCBM domain size. One important finding of this study is that, in contrast to spin-coated films, the P3HT molecular orientation can be controlled by the substrate chemistry, with PSS substrates yielding face-on orientation at the substrate-film interface, an orientation highly favorable for organic solar cells.

  16. Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

    Science.gov (United States)

    Rajpal, Shashikant; Kumar, S. R.

    2018-04-01

    Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

  17. Comparison of Microstructural and Morphological Properties of Electrodeposited Fe-Cu Thin Films with Low and High Fe : Cu Ratio

    Directory of Open Access Journals (Sweden)

    Umut Sarac

    2013-01-01

    Full Text Available Fe-Cu films with low and high Fe : Cu ratio have been produced from the electrolytes with different Fe ion concentrations at a constant deposition potential of −1400 mV versus saturated calomel electrode (SCE by electrodeposition technique onto indium tin oxide (ITO coated conducting glass substrates. It was observed that the variation of Fe ion concentration in the electrolyte had a very strong influence on the compositional, surface morphological, and microstructural properties of the Fe-Cu films. An increase in the Fe ion concentration within the plating bath increased the Fe content, consequently Fe : Cu ratio within the films. The crystallographic structure analysis showed that the Fe-Cu films had a mixture of face-centered cubic (fcc Cu and body centered cubic (bcc α-Fe phases. The average crystallite size decreased with the Fe ion concentration. The film electrodeposited from the electrolyte with low Fe ion concentration exhibited a morphology consisting of dendritic structures. However, the film morphology changed from dendritic structure to cauliflower-like structure at high Fe ion concentration. The surface roughness and grain size were found to decrease significantly with increasing Fe ion concentration in the electrolyte. The significant differences observed in the microstructural and morphological properties caused by the change of Fe ion concentration in the electrolyte were ascribed to the change of Fe : Cu ratio within the films.

  18. Structural, morphological, and magnetic characteristics of Cu-implanted nonpolar GaN films

    International Nuclear Information System (INIS)

    Sun Lili; Yan Fawang; Zhang Huixiao; Wang Junxi; Zeng Yiping; Wang Guohong; Li Jinmin

    2009-01-01

    Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentionally doped nonpolar a-plane(112-bar 0) GaN films and a subsequent thermal annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The sample shows a clear ferromagnetism behavior at room temperature. It is significantly shown that with a Cu concentration as low as 0.75% the sample exhibits a saturation magnetization about 0.65 μ B /Cu atom. Moreover, the possible origin of the ferromagnetism for the sample was also discussed briefly.

  19. Morphology and N₂ Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes.

    Science.gov (United States)

    Fernandez, Ekain; Sanchez-Garcia, Jose Angel; Viviente, Jose Luis; van Sint Annaland, Martin; Gallucci, Fausto; Tanaka, David A Pacheco

    2016-02-10

    The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM), and the results indicate an increase of the grain size from 120 to 250-270 nm and film surface roughness from 4-5 to 10-12 nm when increasing the temperature from around 360-510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5-2-µm thick) films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO₂ 3-nm top layer supports (smallest pore size among all tested) present high N₂ permeance in the order of 10(-6) mol·m(-2)·s(-1)·Pa(-1) at room temperature.

  20. Morphology and N2 Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes

    Directory of Open Access Journals (Sweden)

    Ekain Fernandez

    2016-02-01

    Full Text Available The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM, and the results indicate an increase of the grain size from 120 to 250–270 nm and film surface roughness from 4–5 to 10–12 nm when increasing the temperature from around 360–510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5–2-µm thick films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO2 3-nm top layer supports (smallest pore size among all tested present high N2 permeance in the order of 10−6 mol·m−2·s−1·Pa−1 at room temperature.

  1. Effect of nickel seed layer on growth of α-V{sub 2}O{sub 5} nanostructured thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat; Singh, Megha, E-mail: meghasingh-08@yahoo.com; Reddy, G. B. [Thin film Laboratory, Department of Physics, Indian Institute of Technology Delhi-110016 (India)

    2015-08-28

    In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ∼ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V{sub 2}O{sub 5} film deposited on both substrates are carried out by SEM, revealed that features of V{sub 2}O{sub 5} NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.

  2. Controlling CH3NH3PbI(3-x)Cl(x) Film Morphology with Two-Step Annealing Method for Efficient Hybrid Perovskite Solar Cells.

    Science.gov (United States)

    Liu, Dong; Wu, Lili; Li, Chunxiu; Ren, Shengqiang; Zhang, Jingquan; Li, Wei; Feng, Lianghuan

    2015-08-05

    The methylammonium lead halide perovskite solar cells have become very attractive because they can be prepared with low-cost solution-processable technology and their power conversion efficiency have been increasing from 3.9% to 20% in recent years. However, the high performance of perovskite photovoltaic devices are dependent on the complicated process to prepare compact perovskite films with large grain size. Herein, a new method is developed to achieve excellent CH3NH3PbI3-xClx film with fine morphology and crystallization based on one step deposition and two-step annealing process. This method include the spin coating deposition of the perovskite films with the precursor solution of PbI2, PbCl2, and CH3NH3I at the molar ratio 1:1:4 in dimethylformamide (DMF) and the post two-step annealing (TSA). The first annealing is achieved by solvent-induced process in DMF to promote migration and interdiffusion of the solvent-assisted precursor ions and molecules and realize large size grain growth. The second annealing is conducted by thermal-induced process to further improve morphology and crystallization of films. The compact perovskite films are successfully prepared with grain size up to 1.1 μm according to SEM observation. The PL decay lifetime, and the optic energy gap for the film with two-step annealing are 460 ns and 1.575 eV, respectively, while they are 307 and 327 ns and 1.577 and 1.582 eV for the films annealed in one-step thermal and one-step solvent process. On the basis of the TSA process, the photovoltaic devices exhibit the best efficiency of 14% under AM 1.5G irradiation (100 mW·cm(-2)).

  3. Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ronak Rahimi

    2013-01-01

    Full Text Available PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. Several material characterization techniques have been utilized to evaluate the structure, morphology, and optical properties of these films. Their optical constants (refractive index and extinction coefficient have been extracted from the spectroscopic ellipsometry (SE. X-ray reflectivity (XRR and atomic force microscopy (AFM were employed to determine the morphology and structure as well as the thickness and roughness of the PTCDI-C8 thin films. These films revealed a high degree of structural ordering within the layers. All the experimental measurements were performed under ambient conditions. PTCDI-C8 films have shown to endure ambient condition which allows pots-deposition characterization.

  4. Influence of growth temperature on morphological, structural and ...

    Indian Academy of Sciences (India)

    Zinc oxide (ZnO) nanostructures were grown as thin films on the p-silicon (100) wafer and also in the form of powder inside the boat by heating (550–950 °C) zinc powder in the presence of oxygen without any catalyst or additives, using the thermal evaporation method. The field-emission scanning electron microscopy ...

  5. Influence of growth parameters on the surface morphology and ...

    Indian Academy of Sciences (India)

    Unknown

    was employed wherein the solution containing a floating substrate remained present during the entire period of ... the cooling of the system at a faster rate. The thickness of the epitaxial layers were measured ... duration in order to reach feature-free smooth epilayers. At 420°C, continuous film spreading across the field of.

  6. Deposition of matrix-free fullerene films with improved morphology by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    2013-01-01

    Thin films of C60 were deposited by matrix-assisted pulsed laser evaporation (MAPLE) from a frozen target of anisole with 0.67 wt% C60. Above a fluence of 1.5 J/cm2 the C60 films are strongly non-uniform and are resulting from transfer of matrix-droplets containing fullerenes. At low fluence...... the fullerene molecules in the films are intact, the surface morphology is substantially improved and there are no measurable traces of the matrix molecules in the film. This may indicate a regime of dominant evaporation at low fluence which merges into the MAPLE regime of liquid ejection of the host matrix...

  7. Morphology and oxygen incorporation effect on antimicrobial activity of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rebelo, Rita, E-mail: ritarebelo@det.uminho.pt [2C2T, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); GRF-CFUM, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); CEB, Center for Biological Engineering, LIBRO—Laboratório de Biofilmes Rosário Oliveira, University of Minho, Campus de Gualtar, 4710-335 Braga (Portugal); Manninen, N.K. [GRF-CFUM, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); SEG-CEMUC, University of Coimbra, 3030-788 Coimbra (Portugal); Fialho, Luísa [GRF-CFUM, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Henriques, Mariana [CEB, Center for Biological Engineering, LIBRO—Laboratório de Biofilmes Rosário Oliveira, University of Minho, Campus de Gualtar, 4710-335 Braga (Portugal); Carvalho, Sandra [GRF-CFUM, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); SEG-CEMUC, University of Coimbra, 3030-788 Coimbra (Portugal)

    2016-05-15

    Highlights: • Ag and Ag{sub x}O thin films were deposited by non-reactive and reactive pulsed DC magnetron sputtering. • Coatings were characterized chemically, physically and structurally. • In order to verify the antibacterial behavior of the coatings, halo inhibition zone tests were realized for Staphylococcus epidermidis and Staphylococcus aureus. • Ag{sub x}O coating presented antibacterial behavior. - Abstract: Ag and Ag{sub x}O thin films were deposited by non-reactive and reactive pulsed DC magnetron sputtering, respectively, with the final propose of functionalizing the SS316L substrate with antibacterial properties. The coatings were characterized chemically, physically and structurally. The coatings nanostructure was assessed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), while the coatings morphology was determined by scanning electron microscopy (SEM). The XRD and XPS analyses suggested that Ag thin film is composed by metallic Ag, which crystallizes in fcc-Ag phase, while the Ag{sub x}O thin film showed both metallic Ag and Ag−O bonds, which crystalize in fcc-Ag and silver oxide phases. The SEM results revealed that Ag thin film formed a continuous layer, while Ag{sub x}O layer was composed of islands with hundreds of nanometers surrounded by small nanoparticles with tens of nanometers. The surface wettability and surface tension parameters were determined by contact angle measurements, being found that Ag and Ag{sub x}O surfaces showed very similar behavior, with all the surfaces showing a hydrophobic character. In order to verify the antibacterial behavior of the coatings, halo inhibition zone tests were realized for Staphylococcus epidermidis and Staphylococcus aureus. Ag coatings did not show antibacterial behavior, contrarily to Ag{sub x}O coating, which presented antibacterial properties against the studied bacteria. The presence of silver oxide phase along with the development of different morphology was

  8. Morphology and oxygen incorporation effect on antimicrobial activity of silver thin films

    International Nuclear Information System (INIS)

    Rebelo, Rita; Manninen, N.K.; Fialho, Luísa; Henriques, Mariana; Carvalho, Sandra

    2016-01-01

    Highlights: • Ag and Ag x O thin films were deposited by non-reactive and reactive pulsed DC magnetron sputtering. • Coatings were characterized chemically, physically and structurally. • In order to verify the antibacterial behavior of the coatings, halo inhibition zone tests were realized for Staphylococcus epidermidis and Staphylococcus aureus. • Ag x O coating presented antibacterial behavior. - Abstract: Ag and Ag x O thin films were deposited by non-reactive and reactive pulsed DC magnetron sputtering, respectively, with the final propose of functionalizing the SS316L substrate with antibacterial properties. The coatings were characterized chemically, physically and structurally. The coatings nanostructure was assessed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), while the coatings morphology was determined by scanning electron microscopy (SEM). The XRD and XPS analyses suggested that Ag thin film is composed by metallic Ag, which crystallizes in fcc-Ag phase, while the Ag x O thin film showed both metallic Ag and Ag−O bonds, which crystalize in fcc-Ag and silver oxide phases. The SEM results revealed that Ag thin film formed a continuous layer, while Ag x O layer was composed of islands with hundreds of nanometers surrounded by small nanoparticles with tens of nanometers. The surface wettability and surface tension parameters were determined by contact angle measurements, being found that Ag and Ag x O surfaces showed very similar behavior, with all the surfaces showing a hydrophobic character. In order to verify the antibacterial behavior of the coatings, halo inhibition zone tests were realized for Staphylococcus epidermidis and Staphylococcus aureus. Ag coatings did not show antibacterial behavior, contrarily to Ag x O coating, which presented antibacterial properties against the studied bacteria. The presence of silver oxide phase along with the development of different morphology was pointed as the main factors in the

  9. AFM, XPS and RBS studies of the growth process of CdS thin films on ITO/glass substrates deposited using an ammonia-free chemical process

    International Nuclear Information System (INIS)

    Mazon-Montijo, D.A.; Sotelo-Lerma, M.; Rodriguez-Fernandez, L.; Huerta, L.

    2010-01-01

    This paper deals with a detailed study of the growth stages of CdS thin films on ITO/glass substrates by chemical bath deposition (CBD). The chemical and morphological characterization was done through X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), and atomic force microscopy (AFM) techniques. On the other hand, optical transmission and X-ray diffraction (XRD) measurements were performed in order to study the optical and structural properties of the films. The time, the chemistry, and morphology of the different stages that form the growth process by CBD were identified through these results. Furthermore, clear evidence was obtained of the formation of Cd(OH) 2 as the first chemical species adhered to the substrate surface which forms the first nucleation centers for a good CdS formation and growth. On the other hand, the ITO coating caused growth stages to occur earlier than in just glass substrates, with which we can obtain a determined thickness in a shorter deposition time. We were able to prove that CBD is a good technique for the manufacture of thin films of semiconductor materials, since the CdS film does not have any impurities. Completely formed films were transparent, uniform, with good adherence to the substrate, of a polycrystalline nature with a hexagonal structure. These results indicate that films obtained by CBD are good candidates to be applied in different optoelectronic devices.

  10. Growth and morphology of 0.80 eV photoemitting indium nitride nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, M.C.; Lee, C.J.; Bourret-Courchesne, E.D.; Konsek, S.L.; Aloni, S.; Han, W.Q.; Zettl, A.

    2004-08-13

    InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first time. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. The group-III nitrides have become an extremely important technological material over the past decade. They are commonly used in optoelectronic devices, such as high brightness light-emitting diodes (LEDs) and low wavelength laser diodes (LDs), as well as high power/high frequency electronic devices. Recently InN thin films grown by MOCVD and MBE were found to have a bandgap energy in the range of 0.7-0.9 eV, much lower than the value of {approx}1.9 eV found for InN films grown by sputtering. This large decrease in the direct bandgap transition energy and the ability to form ternary (InGaN) and quaternary (AlInGaN) alloys increases the versatility of group-III nitride optoelectronic devices, ranging from the near IR to the UV. Additionally, InN has some promising transport and electronic properties. It has the smallest effective electron mass of all the group-III nitrides which leads to high mobility and high saturation velocity10 and a large drift velocity at room temperature. As a result of these unique properties, there has been a large increase in interest in InN for potential use in optoelectronic devices, such as LDs and high efficiency solar cells, as well as high frequency/high power electronic devices.

  11. Effect of sol concentration on the structural, morphological, optical and photoluminescence properties of zirconia thin films

    International Nuclear Information System (INIS)

    Joy, K.; Maneeshya, L.V.; Thomas, Jijimon K.; Thomas, P.V.

    2012-01-01

    ZrO 2 thin films were deposited on quartz substrates from 10 wt.%, 20 wt.% and 40 wt.% solutions of Zirconium-n-butoxide in isopropanol by sol–gel dip-coating technique. Higher concentrated sols of 20 wt.% and 40 wt.% exhibited faster gelation, where as 10 wt.% sol remained stable for two months and films synthesized from this sol remained transparent and continuous even for 12 coatings. Ellipsometric study revealed that refractive index of the films increased with increase in sol concentration which is ascribed to the decrease in porosity. X-ray diffraction study showed that a tailoring of grain size from 7.9 to 39.2 nm is possible with increase in sol concentration. Atomic force microscopy studies showed a change in growth mode from vertical to lateral mode with increase in sol concentration. The film surface revealed positive skewness and high kurtosis values which make them favorable for tribological applications. The average optical transmittance in the visible region is highest (greater than 90%) for the film deposited from 10 wt.% sol. The optical band gap decreased from 5.74 to 5.62 eV with increase in the sol concentration. Photoluminescence (PL) spectra of the films exhibit an increase in the emission intensity with increase in sol concentration which substantiates better crystalline quality of the film deposited from 40 wt.% sol and increase in oxygen vacancies. The “Red shift” of the PL spectra with increase in sol concentration originates from the increase in the grain size with sol concentration which makes it suitable for generation of solid state lighting in light emitting diode. - Highlights: ► ZrO 2 thin films were deposited on quartz substrates by sol-gel method. ► Control of grain size with sol concentration. ► Microstructure studies showed a change in growth mode from vertical to lateral mode. ► The optical band gap decreased with increase in grain size and sol concentration. ► Dependence of photoluminescence on particle size

  12. Impact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface

    Energy Technology Data Exchange (ETDEWEB)

    Horsley, K., E-mail: horsley5@unlv.nevada.edu; Hanks, D. A.; Weir, M. G. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Beal, R. J. [Materials Science and Engineering Department, University of Arizona, Tucson, Arizona 85721 (United States); Wilks, R. G. [Solar Energy Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), 14109 Berlin (Germany); Blum, M. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Häming, M. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen (Germany); Hofmann, T. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Bundeswehr Research Institute for Materials, Fuels and Lubricants (WIWeB), Institutsweg 1, 85435 Erding (Germany); Weinhardt, L. [Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154 (United States); Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen (Germany); ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen (Germany); and others

    2014-07-14

    To enable an understanding and optimization of the optoelectronic behavior of CdTe-ZnO nanocomposites, the morphological and chemical properties of annealed CdTe/ZnO interface structures were studied. For that purpose, CdTe layers of varying thickness (4–24 nm) were sputter-deposited on 100 nm-thick ZnO films on surface-oxidized Si(100) substrates. The morphological and chemical effects of annealing at 525 °C were investigated using X-ray Photoelectron Spectroscopy (XPS), X-ray-excited Auger electron spectroscopy, energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. We find a decrease of the Cd and Te surface concentration after annealing, parallel to an increase in Zn and O signals. While the as-deposited film surfaces show small grains (100 nm diameter) of CdTe on the ZnO surface, annealing induces a significant growth of these grains and separation into islands (with diameters as large as 1 μm). The compositional change at the surface is more pronounced for Cd than for Te, as evidenced using component peak fitting of the Cd and Te 3d XPS peaks. The modified Auger parameters of Cd and Te are also calculated to further elucidate the local chemical environment before and after annealing. Together, these results suggest the formation of tellurium and cadmium oxide species at the CdTe/ZnO interface upon annealing, which can create a barrier for charge carrier transport, and might allow for a deliberate modification of interface properties with suitably chosen thermal treatment parameters.

  13. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, R.K.; Ghosh, K.; Kahol, P.K. [Department of Physics, Astronomy and Materials Science, Missouri State University, Springfield, MO 65897 (United States); Yoon, J. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States); Guha, S. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States)], E-mail: guhas@missouri.edu

    2008-08-30

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the {beta} phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

  14. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Kahol, P.K.; Yoon, J.; Guha, S.

    2008-01-01

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films

  15. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    Science.gov (United States)

    Gupta, R. K.; Ghosh, K.; Kahol, P. K.; Yoon, J.; Guha, S.

    2008-08-01

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

  16. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Science.gov (United States)

    Catena, Alberto; McJunkin, Thomas; Agnello, Simonpietro; Gelardi, Franco M.; Wehner, Stefan; Fischer, Christian B.

    2015-08-01

    Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  17. Influence of the deposition parameters on the morphology and electrical conductivity of PANI/PSS self-assembled films

    Energy Technology Data Exchange (ETDEWEB)

    Braga, Guilherme S. [Departamento de Engenharia de Sistemas Eletronicos, Escola Politecnica da Universidade de Sao Paulo, Avenida Professor Luciano Gualberto, travessa 3, 158, 05508-900, Sao Paulo - SP (Brazil)], E-mail: gbraga@lme.usp.br; Paterno, Leonardo G.; Lima, John Paul H.; Fonseca, Fernando J. [Departamento de Engenharia de Sistemas Eletronicos, Escola Politecnica da Universidade de Sao Paulo, Avenida Professor Luciano Gualberto, travessa 3, 158, 05508-900, Sao Paulo - SP (Brazil); Andrade, Adnei M. de [Departamento de Engenharia de Sistemas Eletronicos, Escola Politecnica da Universidade de Sao Paulo, Avenida Professor Luciano Gualberto, travessa 3, 158, 05508-900, Sao Paulo - SP (Brazil); Instituto de Eletrotecnica e Energia, Universidade de Sao Paulo, Avenida Professor Luciano Gualberto, 1289, 05508-010, Sao Paulo - SP (Brazil)

    2008-05-01

    The influence of deposition parameters, namely polymer concentration and pH of the deposition solution, cleaning, and drying steps on the morphology and electrical characteristics of polyaniline and sulfonated polystyrene (PANI/PSS) nanostructured films deposited by the self-assembly technique is evaluated by UV-Vis spectroscopy, optical and atomic force microscopy, and electrical resistance measurements. It is found that stirring the cleaning solution during the cleaning step is crucial for obtaining homogenous films. Stirring of the cleaning solution also influences the amount of PANI adsorbed in the films. In this regard, the drying process seems to be less critical since PANI amount and film thickness are similar in films dried with N{sub 2} flow or with an absorbent tissue. It is observed, however, that drying with N{sub 2} flow results in rougher films. As an additional point, an assessment of the influence of the deposition method (manual versus mechanical) on the film characteristics was carried out. A significant difference on the amount of PANI and film thickness between films prepared by different human operators and by a homemade mechanical device was observed. The variability in film thickness and PANI adsorbed amount is smaller in films mechanically assembled.

  18. Volmer-Weber growth stages of polycrystalline metal films probed by in situ and real-time optical diagnostics

    Science.gov (United States)

    Abadias, G.; Simonot, L.; Colin, J. J.; Michel, A.; Camelio, S.; Babonneau, D.

    2015-11-01

    The Volmer-Weber growth of high-mobility metal films is associated with the development of a complex compressive-tensile-compressive stress behavior as the film deposition proceeds through nucleation of islands, coalescence, and formation of a continuous layer. The tensile force maximum has been attributed to the end of the islands coalescence stage, based on ex situ morphological observations. However, microstructural rearrangements are likely to occur in such films during post-deposition, somewhat biasing interpretations solely based on ex situ analysis. Here, by combining two simultaneous in situ and real-time optical sensing techniques, based on surface differential reflectance spectroscopy (SDRS) and change in wafer curvature probed by multibeam optical stress sensor (MOSS), we provide direct evidence that film continuity does coincide with tensile stress maximum during sputter deposition of a series of metal (Ag, Au, and Pd) films on amorphous SiOx. Stress relaxation after growth interruption was testified from MOSS, whose magnitude scaled with adatom mobility, while no change in SDRS signal could be revealed, ruling out possible changes of the surface roughness at the micron scale.

  19. Enhancement of carrier mobility in pentacene thin-film transistor on SiO{sub 2} by controlling the initial film growth modes

    Energy Technology Data Exchange (ETDEWEB)

    Qi Qiong; Yu Aifang; Jiang Peng [National Center for Nanoscience and Technology, No.11, Beiyitiao Zhongguancun, Beijing 100190 (China); Jiang Chao, E-mail: jiangch@nanoctr.cn [National Center for Nanoscience and Technology, No.11, Beiyitiao Zhongguancun, Beijing 100190 (China)

    2009-02-15

    Pentacene thin-film transistors (TFTs) were fabricated on thermally grown SiO{sub 2} gate insulator under the conditions of various pre-cleaning treatments. Initial nucleation and growth of the material films on treated substrates were observed by atomic force microscope. The performance of fabricated TFT devices with different surface cleaning approaches was found to be highly related to the initial film morphologies. In contrast to the three-dimensional island-like growth mode on SiO{sub 2} under an organic cleaning process, a layer-by-layer initial growth occurred on the SiO{sub 2} insulator cleaned with ammonia solution, which was believed to be the origination of the excellent electrical properties of the TFT device. Field effect mobility of the TFT device could achieve as high as 1.0 cm{sup 2}/Vs on the bared SiO{sub 2}/Si substrate and the on/off ratio was over 10{sup 6}.

  20. Effect of plant growth promoting rhizobacteria on root morphology of ...

    African Journals Online (AJOL)

    Jane

    2011-10-03

    Oct 3, 2011 ... morphology etc, and are also useful in cutting down the cost of chemical fertilizers. The present investigation was ... flavoring agent, as a source of vegetable oils and also for preparing textile dye in the Far East, ... technique and comparison among mean values of treatments was made by Duncan's Multiple ...

  1. Crystal growth and morphology of calcium oxalates and carbonates

    NARCIS (Netherlands)

    Heijnen, W.M.M.

    1986-01-01

    The main purpose of the research described in this thesis is to establish a relationship between the crystal structure and morphology of calcium oxalate and calcium carbonate crystals grown from aqueous solutions. Starting point is the PBC (Periodic Bond Chain) theory formulated by Hartman and

  2. Influence of Doping Concentration on Dielectric, Optical, and Morphological Properties of PMMA Thin Films

    Directory of Open Access Journals (Sweden)

    Lyly Nyl Ismail

    2012-01-01

    Full Text Available PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA concentration increased. The dielectric loss is in the range of 0.01 ~ –0.01. All samples show dielectric characteristics which have dielectric loss is less than 0.05. The optical properties for thin films were measured at room temperature across 200 ~ 1000 nm wavelength region. All samples are highly transparent. The energy band gaps are in the range of 3.6 eV to 3.9 eV when the PMMA concentration increased. The morphologies of the samples show that all samples are uniform and the surface roughness increased as the concentration increased. From this study, it is known that, the dielectric, optical, and morphology properties were influenced by the amount of PMMA concentration in the solution.

  3. Cellular Automaton Simulation of Tumour Growth – Equivocal Relationships between Simulation Parameters and Morphologic Pattern Features

    Directory of Open Access Journals (Sweden)

    Josef Smolle

    1998-01-01

    Full Text Available Objective: To develop an interpretation procedure which estimates simulation parameters (tumour cell motility, tumour cell adhesion, autocrine and paracrine growth control, stroma destruction of simulated patterns solely based on morphometric features of the morphologic pattern.

  4. Modeling of crystal morphology : growth simulation on facets in arbitrary orientations

    NARCIS (Netherlands)

    Boerrigter, Stephan Xander Mattheus

    2003-01-01

    Many aspects of crystal morphology modeling are studied in this thesis. Most important of all, is the dependence of crystal growth on supersaturation--the driving force for crystallization--which not only influences the crystal morphology, but also polymorphism and nucleation. It is shown that an

  5. Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method

    Science.gov (United States)

    Amin, N. Mohd; Ng, S. S.

    2018-01-01

    Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.

  6. A Study on the Thermodynamics of Grain Growth in R.F. Magnetron Sputtered NiO Thin Films

    Directory of Open Access Journals (Sweden)

    I. Dhanya

    2013-01-01

    Full Text Available Postdeposition annealing of thin nickel films synthesized using R.F. magnetron sputtering technique is carried in this study. The XRD analysis indicates that annealing of the nickel films leads to the formation of nickel oxide with a preferential growth along (200 plane. The oxidation mechanism is observed with a phase transformation and results in polycrystalline NiO films. The surface morphology of the thin films was investigated by scanning electron microscopy (SEM and atomic force microscopy (AFM as a function of annealing temperature. The studies indicate the formation of well-defined grain boundaries due to agglomeration of nanocrystallites. The films annealed in the range 573–773 K are found to be porous. The optical transmission spectra of the films annealed at 773 K exhibit interference effects for photon energies below the fundamental absorption edge. The optical studies indicate the existence of direct interband transition across a bandgap of 3.7 eV in confirmation with earlier band structure calculations.

  7. Cellular Automaton Simulation of Tumour Growth ? Equivocal Relationships between Simulation Parameters and Morphologic Pattern Features

    OpenAIRE

    Smolle, Josef

    1998-01-01

    Objective: To develop an interpretation procedure which estimates simulation parameters (tumour cell motility, tumour cell adhesion, autocrine and paracrine growth control, stroma destruction) of simulated patterns solely based on morphometric features of the morphologic pattern. Methods: A cellular automaton computer simulation program was developed which produces morphologic patterns by growth of a seed of tumour cells. At the beginning of each simulation run certain simulation parameters a...

  8. Effect of Sheet Resistance and Morphology of ITO Thin Films on Polymer Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Ram Narayan Chauhan

    2012-01-01

    Full Text Available Solar cell fabrication on flexible thin plastic sheets needs deposition of transparent conducting anode layers at low temperatures. ITO thin films are deposited on glass by RF sputtering at substrate temperature of 70∘C and compare their phase, morphology, optical, and electrical properties with commercial ITO. The films contain smaller nanocrystallites in (222 preferred orientation and exhibit comparable optical transmittance (~95% in the wavelength range of 550–650 nm, but high sheet resistance of ~103 Ω/□ (the value being ~36 Ω/□ for commercial ITO.The polymer solar cells with PEDOT: PSS and P3HT: PCBM layers realized on RF sputtered vis-a-vis commercial ITO thin films are shown to display a marginal difference in power conversion efficiency, low fill factor, and low open-circuit voltage but increased short-circuit current density. The decrease in fill factor, open-circuit voltage is compensated by increased short-circuit current. Detailed study is made of increased short-circuit current density.

  9. Self-assembly morphology effects on the crystallization of semicrystalline block copolymer thin film

    Science.gov (United States)

    Wei, Yuhan; Pan, Caiyuan; Li, Binyao; Han, Yanchun

    2007-03-01

    Self-assembly morphology effects on the crystalline behavior of asymmetric semicrystalline block copolymer polystyrene-block-poly(L-lactic acid) thin film were investigated. Firstly, a series of distinctive self-assembly aggregates, from spherical to ellipsoid and rhombic lamellar micelles (two different kinds of rhombic micelles, defined as rhomb 1 and rhomb 2) was prepared by means of promoting the solvent selectivity. Then, the effects of these self-assembly aggregates on crystallization at the early stage of film evolution were investigated by in situ hot stage atomic force microscopy. Heterogeneous nucleation initiated from the spherical micelles and dendrites with flat on crystals appeared with increasing temperature. At high temperature, protruding structures were observed due to the thickening of the flat-on crystals and finally more thermodynamically stable crystallization formed. Annealing the rhombic lamellar micelles resulted in different phenomena. Turtle-shell-like crystalline structure initiated from the periphery of the rhombic micelle 1 and spread over the whole film surface in the presence of mostly noncrystalline domain interior. Erosion and small hole appeared at the surface of the rhombic lamellar micelle 2; no crystallization like that in rhomb 1 occurred. It indicated that the chain-folding degree was different in these two micelles, which resulted in different annealing behaviors.

  10. Structure and Growth Control of Organic–Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals

    Science.gov (United States)

    Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong

    2016-01-01

    Recently, organic–inorganic halide perovskites have sparked tremendous research interest because of their ground‐breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light‐emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high‐quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three‐dimensional large sized single crystals, two‐dimensional nanoplates, one‐dimensional nanowires, to zero‐dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high‐performance (opto)electronic devices. PMID:27812463

  11. Structure and Growth Control of Organic-Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals.

    Science.gov (United States)

    Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong; Liang, Ziqi

    2016-04-01

    Recently, organic-inorganic halide perovskites have sparked tremendous research interest because of their ground-breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light-emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high-quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three-dimensional large sized single crystals, two-dimensional nanoplates, one-dimensional nanowires, to zero-dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high-performance (opto)electronic devices.

  12. Anomalous growth of HfAl3 in thin films

    International Nuclear Information System (INIS)

    Lever, R.F.; Howard, J.K.; Chu, W.K.; Smith, P.J.

    1977-01-01

    Anomalous growth of HfAl 3 is observed on 400degreeC annealing of evaporated thin-film samples consisting of 900 A aluminum, on 1000 A hafnium, 6000 A aluminum and SiO 2 substrates. A continuous layer of HfAl 3 forms at the aluminum--hafnium interface nearer the surface, but not at the deeper interface. The surface HfAl 3 layer then continues to grow, fed by diffusion of underlying aluminum through the intervening hafnium layer. Needlelike precipitates of HfAl 3 are formed along the underlying aluminum grain boundaries. Observations are made by nuclear backscattering, Auger electron spectroscopy, and transmission electron microscopy. Similar behavior is observed in Al--Zr--Al layers

  13. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

  14. Computer graphic investigation on the epitaxial growth of superconductor films

    International Nuclear Information System (INIS)

    Miyamoto, A.; Iwamoto, S.; Inui, T.; Agusa, K.

    1989-01-01

    A mechanism of the epitaxial growth the oxide superconductor films has been investigated by using the computer graphics for the combination of orthorhombic Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 MgO, and ZrO 2 . The (001) plane Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 , MgO, and ZrO 2 . The (001) plane of Ba 2 YCu 3 O 7-x has been shown to fit the (100) plane of SrTiO 3 , MgO, and ZrO 2 . A crystallographic fit has also been proved between the (110) plane of Ba 2 YCu 3 O 7-x and the (110) plane of SrTiO 3 . These results are consistent with the experimental data about the epitaxial growth of the Ba 2 YCu 3 O 7-x films. Furthermore, detailed investigation of atomic arrangements has indicated some differences in the ionic interaction at the superconductor-substrate interface among SrTiO 3 , MgO, and ZrO 2 substrates. As for ZrO 2 (100) plane, for examples, ionic arrangements at the oxide layer is favorable only for the interaction with Y 3+ layer of Ba 2 YCu 3 O 7-x , while the Zr-O layer of ZrO 2 can interact with both Ba-O layer and Cu-O layer of Ba 2 YCu 3 O 7-x

  15. An evaluation of chondrocyte morphology and gene expression on superhydrophilic vertically-aligned multi-walled carbon nanotube films

    International Nuclear Information System (INIS)

    Antonioli, Eliane; Lobo, Anderson O.; Ferretti, Mario; Cohen, Moisés; Marciano, Fernanda R.; Corat, Evaldo J.; Trava-Airoldi, Vladimir J.

    2013-01-01

    Cartilage serves as a low-friction and wear-resistant articulating surface in diarthrodial joints and is also important during early stages of bone remodeling. Recently, regenerative cartilage research has focused on combinations of cells paired with scaffolds. Superhydrophilic vertically aligned carbon nanotubes (VACNTs) are of particular interest in regenerative medicine. The aim of this study is to evaluate cell expansion of human articular chondrocytes on superhydrophilic VACNTs, as well as their morphology and gene expression. VACNT films were produced using a microwave plasma chamber on Ti substrates and submitted to an O 2 plasma treatment to make them superhydrophilic. Human chondrocytes were cultivated on superhydrophilic VACNTs up to five days. Quantitative RT-PCR was performed to measure type I and type II Collagen, Sox9, and Aggrecan mRNA expression levels. The morphology was analyzed by scanning electron microscopy (SEM) and confocal microscopy. SEM images demonstrated that superhydrophilic VACNTs permit cell growth and adhesion of human chondrocytes. The chondrocytes had an elongated morphology with some prolongations. Chondrocytes cultivated on superhydrophilic VACNTs maintain the level expression of Aggrecan, Sox9, and Collagen II determined by qPCR. This study was the first to indicate that superhydrophilic VACNTs may be used as an efficient scaffold for cartilage or bone repair. Highlights: ► Chondrocytes were cultivated on Superhydrophilic Vertically Aligned Multiwall Carbon Nanotubes (VACNT). ► We have shown a correlation between gene expression and thermodynamics aspects. ► Superhydrhophilic VACNT will be an excellent substrate for cartilage and bone tissue regeneration.

  16. In Situ Monitoring and Characterization of Superhard Thin-Film Growth Under Non-Equilibrium Conditions

    National Research Council Canada - National Science Library

    Tsong, I

    2000-01-01

    .... Both of these techniques were applied to the CVD growth of boron and GaN films. We have synthesized novel precursors of C3N3P, Si4CN4, LiBC4N4, BC3N3, BeC2N2, MgC2N2 for CVD growth of films with properties of superhardness...

  17. Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Wolf, R.M.; Giesbers, J.B.; Blom, P.W.M.; Grosse Holz, K.O.; Pastoor, E.

    The combination of a variety of oxidic thin films in two materials systems is described. The first one focuses on the growth of BaZrO3 on SrTiO3 (both perovskites) and the use of these stacks as a substrate for the growth of magnetic ferrite spinel films. The second system shows the combination of

  18. A comparative study of the morphology of flow and spin coated P3HT:PCBM films

    Science.gov (United States)

    Chapa, Jose; Karim, Alamgir

    2013-03-01

    Polymer solar cells are attractive due to the possibility of using cheaper materials and processing techniques for mass production of solar panels. Previous methods of fabricating polymer solar cells are suitable in laboratory conditions but are not scalable for industrial production. In this study, thin films of the photoactive blend of poly(3-hexylthiophene) (P3HT) and fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) were prepared by flow coating, which is suitable for industrial manufacturing of solar cells. P3HT:PCBM blends were cast from different solvents, and the morphology of flow coated and spin coated films was compared. The surface morphology and optical properties of P3HT:PCBM films were characterized with optical microscopy, AFM, and UV-vis absorption spectroscopy. The degree of P3HT order was higher in flow coated films, as compared to spin coated films. Films flow coated using chloroform solutions had a higher thermal stability and an enhanced degree of phase separation as compared to spin coated films. Flow coated films from chlorobenzene solutions had a lower thermal stability and a smaller length scale of phase separation. This study demonstrates that flow coating is a suitable alternative technique for fabricating polymer solar cells. Work supported by U.S. Department of Energy, Office of Basic Energy Sciences, under Contract DE- AC02-98CH10886

  19. Skin morphological changes in growth hormone deficiency and acromegaly

    DEFF Research Database (Denmark)

    Lange, Merete Wolder; Thulesen, J; Feldt-Rasmussen, U

    2001-01-01

    To evaluate the histomorphology of skin and its appendages, especially eccrine sweat glands, in patients with GH disorders, because reduced sweating ability in patients with growth hormone deficiency (GHD) is associated with increased risk of hyperthermia under stressed conditions....

  20. Influence of growth parameters on the surface morphology and ...

    Indian Academy of Sciences (India)

    Unknown

    Kumagawa M, Witt A F, Lichtensteiger M and Gatos H C 1973. J. Electrochem. Soc. 130 583. Kuphal E 1991 Appl. Phys. A52 380. Mattes B L and Route R K 1974 J. Cryst. Growth 27 133. McConville C F, Whitehouse C R, Williams G M, Cullis A G,. Ashley T, Skonick M S, Brown G T and Courtney S J 1989. J. Cryst. Growth ...

  1. Skin morphological changes in growth hormone deficiency and acromegaly

    DEFF Research Database (Denmark)

    Lange, Merete Wolder; Thulesen, J; Feldt-Rasmussen, U

    2001-01-01

    To evaluate the histomorphology of skin and its appendages, especially eccrine sweat glands, in patients with GH disorders, because reduced sweating ability in patients with growth hormone deficiency (GHD) is associated with increased risk of hyperthermia under stressed conditions.......To evaluate the histomorphology of skin and its appendages, especially eccrine sweat glands, in patients with GH disorders, because reduced sweating ability in patients with growth hormone deficiency (GHD) is associated with increased risk of hyperthermia under stressed conditions....

  2. African Jobless Growth Morphology:Vulnerabilities and Policy Responses

    OpenAIRE

    NWAOBI, GODWIN

    2013-01-01

    As by product of economic growth, jobs are indeed transformational. In other words, efficiency increases as workers get better at what they do (as more productive jobs appear and less productive one disappear). In fact societies flourish as jobs bring together people from different ethnic and social backgrounds while providing alternatives to conflict. Unfortunately, in many African countries, unemployment rates are low and growth is seldom jobless. Regrettably, most of the poor work long ho...

  3. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

    Science.gov (United States)

    Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Wang, Haiyan

    2015-11-01

    Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of group III-nitrides on thermally active substrates at low temperature. The precursors generated from the pulsed laser ablating the target has enough kinetic energy when arriving at substrates, thereby effectively suppressing the interfacial reactions between the epitaxial films and the substrates, and eventually makes the film growth at low temperature possible. So far, high-quality group III-nitride epitaxial films have been successfully grown on a variety of thermally active substrates by PLD. By combining PLD with other technologies such as laser rastering technique, molecular beam epitaxy (MBE), and metal-organic chemical vapor deposition (MOCVD), III-nitride-based light-emitting diode (LED) structures have been realized on different thermally active substrates, with high-performance LED devices being demonstrated. This review focuses on the epitaxial growth of group III-nitrides on thermally active substrates by PLD and their use in the development of LED devices. The surface morphology, interfacial property between film and substrate, and crystalline quality of as-grown group III-nitride films by PLD, are systematically reviewed. The corresponding solutions for film homogeneity on large size substrates, defect control, and InGaN films growth by PLD are also discussed in depth, together with introductions to some newly developed technologies for PLD in order to realize LED structures, which provides great opportunities for commercialization of LEDs on thermally active substrates.

  4. Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Volintiru, I.; Creatore, M.; Kniknie, B. J.; Spee, C. I. M. A.; Sanden, M. C. M. van de

    2007-01-01

    Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), and chemical properties of the deposited films were investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), electron recoil detection (ERD), Rutherford backscattering (RBS), and time of flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that the working pressure plays an important role in controlling the sheet resistance R s and roughness development during film growth. At 1.5 mbar the AZO films are highly conductive (R s 4% of the film thickness), however, they are characterized by a large sheet resistance gradient with increasing film thickness. By decreasing the pressure from 1.5 to 0.38 mbar, the gradient is significantly reduced and the films become smoother, but the sheet resistance increases (R s ≅100 Ω/□ for a film thickness of 1000 nm). The sheet resistance gradient and the surface roughness development correlate with the grain size evolution, as determined from the AFM and SEM analyses, indicating the transition from pyramid-like at 1.5 mbar to pillar-like growth mode at 0.38 mbar. The change in plasma chemistry/growth precursors caused by the variation in pressure leads to different concentration and activation efficiency of Al dopant in the zinc oxide films. On the basis of the experimental evidence, a valid route for further improving the conductivity of the AZO film is found, i.e., increasing the grain size at the initial stage of film growth

  5. Optical Properties and Surface Morphology of Nano-composite PMMA: TiO2 Thin Films

    International Nuclear Information System (INIS)

    Lyly Nyl Ismail; Ahmad Fairoz Aziz; Habibah Zulkefle

    2011-01-01

    There are two nano-composite PMMA: TiO 2 solutions were prepared in this research. First solution is nano-composite PMMA commercially available TiO 2 nanopowder and the second solution is nano-composite PMMA with self-prepared TiO 2 powder. The self-prepared TiO 2 powder is obtained by preparing the TiO 2 sol-gel. Solvo thermal method were used to dry the TiO 2 sol-gel and obtained TiO 2 crystal. Ball millers were used to grind the TiO 2 crystal in order to obtained nano sized powder. Triton-X was used as surfactant to stabilizer the composite between PMMA: TiO 2 . Besides comparing the nano-composite solution, we also studied the effect of the thin films thickness on the optical properties and surface morphology of the thin films. The thin films were deposited by sol-gel spin coating method on glass substrates. The optical properties and surface characterization were measured with UV-VIS spectrometer equipment and atomic force microscopy (AFM). The result showed that nano-composite PMMA with self prepared TiO 2 give high optical transparency than nano-composite PMMA with commercially available TiO 2 nano powder. The results also indicate as the thickness is increased the optical transparency are decreased. Both AFM images showed that the agglomerations of TiO 2 particles are occurred on the thin films and the surface roughness is increased when the thickness is increased. High agglomeration particles exist in the AFM images for nano-composite PMMA: TiO 2 with TiO 2 nano powder compare to the other nano-composite solution. (author)

  6. The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films

    International Nuclear Information System (INIS)

    Sun Lili; Yan Fawang; Zhang Huixiao; Wang Junxi; Zeng Yiping; Wang Guohong; Li Jinmin

    2009-01-01

    Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (112-bar0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-induced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices.

  7. Influence of morphology and topography on potentiometric response of magnesium and calcium sensitive PEDOT films doped with adenosine triphosphate (ATP)

    International Nuclear Information System (INIS)

    Paczosa-Bator, B.; Peltonen, J.; Bobacka, J.; Lewenstam, A.

    2006-01-01

    Poly(3,4-ethylenedioxythiophene) (PEDOT) films doped with adenosine triphosphate (ATP) are used to study the biologically relevant competitive magnesium and calcium ion-exchange at ATP membrane sites. It is shown, by atomic force microscopy (AFM) and scanning electron microscopy (SEM), that the surface topography and morphology of the PEDOT-ATP films determines the quality of their potentiometric response. More smooth and less rough films result in better potentiometric characteristics, particularly in a faster response. The topography/morphology of the PEDOT-ATP films is influenced by conditions during electrodeposition (electrochemical method of deposition, pH, concentration of electrolytes) and post-deposition soaking (including net-time of soaking), as evidenced by X-ray photoelectron spectroscopy (XPS) and energy dispersive analysis of X-rays (EDAX)

  8. [Morphological character of growth cycle for Epimedium acuminatim and icariin content analysis].

    Science.gov (United States)

    Zhou, Tao; Xiong, Hou-Xi; Lin, Ge; Jiang, Wei-Ke; Guo, Lan-Ping; Lei, Min; Chen, Chuan-Yi; Zhang, Xiao-Bo

    2014-01-01

    To study the relationship between morphological characteristics of growth cycle for Epimedium acuminatium and accumulation level of secondary metabolites. After making habitat clear, methods of morphology observation, specimen preparation, organism charting were applied to record morphological characteristics of E. acuminatium at different stages. HPLC was employed to detect icariin content of different parts of the plant at the stage of vegetative growth and sexual reproduction. The growth cycle of E. acuminatium was divided into vegetative growth stage and sexual and asexual reproduction coexistence stage. Seven to eight years were needed for the plants flowering and seeding of E. acuminatimcan in open land of forest edge, but within good nutrition conditions, growth cycle is shortened into three to four years. The difference of icariin content in two growth stages was not significant. Morphological change of lower and foliar organ can be utilized to estimate growth age. But after applying sexual propagation for both root and stem of grown plants, it's been difficult to determine their growth year. If individual biomass or yield is economical, plants can be harvested in both vegetative growth and sexual reproduction stages.

  9. Atomistic growth phenomena of reactively sputtered RuO2 and MnO2 thin films

    International Nuclear Information System (INIS)

    Music, Denis; Bliem, Pascal; Geyer, Richard W.; Schneider, Jochen M.

    2015-01-01

    We have synthesized RuO 2 and MnO 2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO 2 nanorods and faceted, nanocrystalline MnO 2 , are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O 2 molecules are preferentially adsorbed at their respective RuO 2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO 2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO 2 . Due to this atomic scale decomposition, MnO 2 may have to be renucleated during growth, which is consistent with experiments

  10. Optical and morphological characterization by atomic force microscopy of luminescent 2-styrylpyridine derivative compounds with Poly(N-vinylcarbazole) films

    International Nuclear Information System (INIS)

    Perez-Gutierrez, E.; Percino, M.J.; Chapela, V.M.; Maldonado, J.L.

    2011-01-01

    The present work addresses the optical and morphological properties of organic films based on low molecular weight dyes styrylpyridine derivatives 2-styrylpyridine (A), 4-chlorophenyl-2-vinylpyridine (B) and 4-fluorophenyl-2-vinylpyridine (C), embedded in a polymeric matrix poly(N-vinylcarbazole) (PVK). The films were prepared by a spin-coating technique from solutions with dye:PVK ratios of 0.25:1, 0.5:1 and 1:1. Solvents were chloroform and toluene. The molar absorption coefficient (ε) spectra for a dye:PVK mixture in solution were a combination of the absorptions of both components separately, but for the deposited films, the shape of the spectrum showed that the poly(N-vinylcarbazole) absorption dominated. However, when the same films were dissolved again in CHCl 3 , their spectra showed an absorption shape similar to that of the solution mixture before the deposition. Solution viscosity measurements were carried out with an Ubbelohde glass capillary viscometer to corroborate the results that showed a better mixture of the dye with the host in chloroform. The morphology of the prepared films was analyzed by atomic force microscopy and exhibited a solvent effect, with a pinhole-free, smooth surface when toluene was used and a wavy surface with chloroform. The ratio dye:matrix was the principal parameter for obtaining optical quality films; for 0.25:1 and 0.5:1 ratios, the films were of good quality, but for 1:1, the dye was expelled from the PVK and a crystallization was present over the surface of the films. Film thickness was also measured and films deposited from toluene solutions gave an average thickness of 54 nm while films from chloroform solutions had an average thickness greater than 160 nm that increased depending on chromophore concentration.

  11. The effect of substrate orientation on the kinetics and thermodynamics of initial oxide-film growth on metals

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Friederike

    2007-11-19

    This thesis addresses the effect of the parent metal-substrate orientation on the thermodynamics and kinetics of ultra-thin oxide-film growth on bare metals upon their exposure to oxygen gas at low temperatures (up to 650 K). A model description has been developed to predict the thermodynamically stable microstructure of a thin oxide film grown on its bare metal substrate as function of the oxidation conditions and the substrate orientation. For Mg and Ni, the critical oxide-film thickness is less than 1 oxide monolayer and therefore the initial development of an amorphous oxide phase on these metal substrates is unlikely. Finally, for Cu and densely packed Cr and Fe metal surfaces, oxide overgrowth is predicted to proceed by the direct formation and growth of a crystalline oxide phase. Further, polished Al single-crystals with {l_brace}111{r_brace}, {l_brace}100{r_brace} and {l_brace}110{r_brace} surface orientations were introduced in an ultra-high vacuum system for specimen processing and analysis. After surface cleaning and annealing, the bare Al substrates have been oxidized by exposure to pure oxygen gas. During the oxidation, the oxide-film growth kinetics has been established by real-time in-situ spectroscopic ellipsometry. After the oxidation, the oxide-film microstructures were investigated by angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction. Finally, high-resolution transmission electron microscopic analysis was applied to study the microstructure and morphology of the grown oxide films on an atomic scale. (orig.)

  12. Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates

    International Nuclear Information System (INIS)

    Yin Xuesong; Tang Wu; Weng Xiaolong; Deng Longjiang

    2009-01-01

    Amorphous or weakly crystalline indium tin oxide (ITO) thin film samples have been prepared on polymethylmethacrylate and polyethylene terephthalate substrates by RF-magnetron sputtering at a low substrate temperature. The surface morphological and electrical properties of the ITO layers were measured by atomic force microscopy (AFM) and a standard four-point probe measurement. The effect of surface morphology on the resistivity of ITO thin films was studied, which presented some different variations from crystalline films. Then, a simplified film system model, including the substrate, continuous ITO layer and ITO surface grain, was proposed to deal with these correlations. Based on this thin film model and the AFM images, a quadratic potential was introduced to simulate the characteristics of the ITO surface morphology, and the classical Kronig-Penney model, the semiconductor electrical theory and the modified Neugebauer-Webb model were used to expound the detailed experimental results. The modelling equation was highly in accord with the experimental variations of the resistivity on the characteristics of the surface morphology.

  13. Growth and structure of L1 sub 0 ordered FePt films on GaAs(001)

    CERN Document Server

    Nefedov, A; Theis-Broehl, K; Zabel, H; Doi, M; Schuster, E; Keune, W

    2002-01-01

    The structural properties of epitaxial L1 sub 0 ordered FePt(001) films, grown by molecular beam epitaxy (alternating deposition of Fe and Pt atomic layers) on buffer-Pt/seed-Fe/GaAs(001) have been studied by in situ reflection high-energy electron diffraction and by ex situ x-ray scattering as a function of the growth conditions. Reflection high-energy electron diffraction intensity oscillations measured during FePt layer growth provide evidence for island growth at T sub s = 200 deg. C and quasi layer-by-layer growth at T sub s = 350 deg. C. From small-angle and wide-angle x-ray scattering it was found that the degree of epitaxy depends critically on morphology of the seed layer and the substrate roughness. X-ray diffraction analysis showed that the long-range order parameter increases from near zero for films grown at 200 deg. C to 0.65 for films grown at 350 deg. C. This confirms the fact that the order parameter is mainly determined by the surface mobility of the atoms which is controlled experimentally ...

  14. Study of graded Ni-Ti shape memory alloy film growth on Si(100) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Martins, R.M.S.; Muecklich, A.; Reuther, H.; Beckers, M. [Forschungszentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, Dresden (Germany); Schell, N. [Institute for Materials Research, GKSS Research Center, Geesthacht (Germany); Silva, R.J.C.; Pereira, L.; Braz Fernandes, F.M. [CENIMAT, Monte de Caparica (Portugal)

    2008-05-15

    In-situ X-ray diffraction (XRD) was employed to study the effect of the deliberate change of the Ti/Ni ratio during the deposition of Ni-Ti films. Thus, graded films were deposited exhibiting distinctive composition and crystalline structure along the growth direction. The as-sputtered films were ex-situ characterized by Auger electron spectroscopy (AES), cross-sectional transmission electron microscopy (XTEM), and electrical resistivity (ER) measurements (during thermal cycling). In this paper results are presented concerning a film (thickness of {approx} 420 nm) with a Ti-rich composition in the central part (ranging from 50 to {approx}60 at. %) and near-equiatomic composition in the extremities, following four distinct deposition periods (different Ti target powers). During the initial deposition step (near-equiatomic composition) the Ni-Ti B2 phase starts by stacking onto (h00) planes on the naturally oxidized Si(100) substrate due to the presence of the native Si oxide (2-3 nm). The increase of the power of the Ti target in the second and third steps induced the precipitation of Ti{sub 2}Ni. When stopping the Ti co-sputtering, Ti{sub 2}Ni dissolves and, thus, plays the role of a Ti reservoir for the formation of B2 phase now preferentially stacking onto (110) with the system approaching again the equiatomic composition. The ex-situ study of the morphology of the interface has shown the presence of NiSi{sub 2} silicides (A-NiSi{sub 2} and B-NiSi{sub 2}), Ti{sub 4}Ni{sub 4}Si{sub 7}, Ti{sub 2}Ni and a non-identified phase constituted by Ni, Ti and Si, most likely amorphous. During thermal cycling, ER measurements revealed phase transitions associated with the B2, R-phase and B19' phases. These type of studies allow the identification of intermediate states during deposition and annealing, and the correlation with the final structure of the film, being useful for the optimisation of the deposition parameters in order to fabricate films with a two

  15. Morphologies and wetting properties of copper film with 3D porous micro-nano hierarchical structure prepared by electrochemical deposition

    International Nuclear Information System (INIS)

    Wang, Hongbin; Wang, Ning; Hang, Tao; Li, Ming

    2016-01-01

    Highlights: • A 3D porous micro-nano hierarchical structure Cu films were prepared. • The evolution of morphology and wettability with deposition time was reported. • The effects of EDA on the microscopic morphology were revealed. • A high contact angle of 162.1° was measured when deposition time is 5 s. • The mechanism of super-hydrophobicity was illustrated by two classical models. - Abstract: Three-dimensional porous micro-nano hierarchical structure Cu films were prepared by electrochemical deposition with the Hydrogen bubble dynamic template. The morphologies of the deposited films characterized by Scanning Electronic Microscopy (SEM) exhibit a porous micro-nano hierarchical structure, which consists of three levels in different size scales, namely the honeycomb-like microstructure, the dendritic substructure and the nano particles. Besides, the factors which influenced the microscopic morphology were studied, including the deposition time and the additive Ethylene diamine. By measuring the water contact angle, the porous copper films were found to be super-hydrophobic. The maximum of the contact angles could reach as high as 162.1°. An empirical correlation between morphologies and wetting properties was revealed for the first time. The pore diameter increased simultaneously with the deposition time while the contact angle decreased. The mechanism was illustrated by two classical models. Such super-hydrophobic three-dimensional hierarchical micro-nano structure is expected to have practical application in industry.

  16. Domain epitaxial growth of ferroelectric films of barium strontium titanate on sapphire

    Science.gov (United States)

    Tumarkin, A. V.; Odinets, A. A.

    2018-01-01

    A model of the epitaxial growth of crystalline multicomponent films on single-crystal substrates with a domain correspondence is presented using a solid solution of barium strontium titanate on sapphire substrates ( r cut). The domain epitaxial growth suggests the matching of the lattice planes of the film and the substrate having similar structures by comparison of domain multiple of an integral number of the interplanar spacings. Variation of the component composition of the solid solution enables changes in the domain size in the range sufficient for epitaxial growth. This method can be used to project the epitaxial growth of films of various solid solutions on single-crystal substrates.

  17. Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

    International Nuclear Information System (INIS)

    Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A.V.

    2015-01-01

    Highlights: • DLC and CN x bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN x ) bilayer. • Al/CN x bilayer presents a higher content of Csp 3 /Csp 2 bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN x ) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN x bilayer. Al interlayer induces the increase of the size and ordering of Csp 2 clusters in the films but AlN interlayer increases the disordering degree of Csp 2 clusters. XPS results showed that a higher content of Csp 3 /Csp 2 bonds presents in the Al/CN x bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN x ) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN x bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application

  18. Evolution effects of the copper surface morphology on the nucleation density and growth of graphene domains at different growth pressures

    Energy Technology Data Exchange (ETDEWEB)

    Hedayat, Seyed Mahdi [Transport Phenomena & Nanotechnology Lab., School of Chemical Engineering, College of Engineering, University of Tehran (Iran, Islamic Republic of); Karimi-Sabet, Javad, E-mail: j_karimi@alum.sharif.edu [NFCRS, Nuclear Science and Technology Research Institute, Tehran (Iran, Islamic Republic of); Shariaty-Niassar, Mojtaba, E-mail: mshariat@ut.ac.ir [Transport Phenomena & Nanotechnology Lab., School of Chemical Engineering, College of Engineering, University of Tehran (Iran, Islamic Republic of)

    2017-03-31

    Highlights: • Manipulation of the Cu surface morphology in a wide range by electropolishing treatment. • Comparison of the nucleation density of graphene at low pressure and atmospheric pressure CVD processes. • Controlling the evolution of the Cu surface morphology inside a novel confined space. • Growth of large-size graphene domains. - Abstract: In this work, we study the influence of the surface morphology of the catalytic copper substrate on the nucleation density and the growth rate of graphene domains at low and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) processes. In order to obtain a wide range of initial surface morphology, precisely controlled electropolishing methods were developed to manipulate the roughntreess value of the as-received Cu substrate (RMS = 30 nm) to ultra-rough (RMS = 130 nm) and ultra-smooth (RMS = 2 nm) surfaces. The nucleation and growth of graphene domains show obviously different trends at LPCVD and APCVD conditions. In contrast to APCVD condition, the nucleation density of graphene domains is almost equal in substrates with different initial roughness values at LPCVD condition. We show that this is due to the evolution of the surface morphology of the Cu substrate during the graphene growth steps. By stopping the surface sublimation of copper substrate in a confined space saturated with Cu atoms, the evolution of the Cu surface was impeded. This results in the reduction of the nucleation density of graphene domains up to 24 times in the pre-smoothed Cu substrates at LPCVD condition.

  19. Effect of Deposition Rate on Structure and Surface Morphology of Thin Evaporated Al Films on Dielectrics and Semiconductors

    DEFF Research Database (Denmark)

    Bordo, K.; Rubahn, H. G.

    2012-01-01

    . The structure and surface morphology of the as-deposited Al films were studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM). SEM imaging of the films showed that the mean grain size of thin Al films on all of the substrates increased from 20 nm - 30 nm to 50 nm - 70 nm...... with increase of the deposition rate. Quantitative AFM characterization showed that for all substrates the root mean square surface roughness increases monotonically with increasing the deposition rate from 0.1 nm/s to 2 nm/s. The observed effects of the deposition rate on the grain size and surface roughness...

  20. Effect of catalyst nanoparticle size on growth direction and morphology of InN nanowires

    Directory of Open Access Journals (Sweden)

    Xu Ji

    2012-06-01

    Full Text Available Au-assisted growth of InN nanowires (NWs was accomplished by a simple chemical vapor deposition system. The as-prepared InN NWs exhibit two morphologies with different growth directions: periodic NWs (PNWs and smooth NWs (SNWs along and , respectively. The PNWs with crinoids morphology resulted when larger Au particles (∼40 nm in diameter were used, while the SNWs with smooth sidewalls were obtained when smaller Au particles (∼10 nm in diameter served as the collector. Furthermore, the mechanism of this growth behavior was discussed in terms of the effect of catalyst nanoparticle size.

  1. The growth of nanostructured Cu{sub 2}ZnSnS{sub 4} films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Che Sulaiman, Nurul Suhada; Nee, Chen Hon [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Ling [Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Lee, Yen Sian [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, Teck Yong [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Shan, E-mail: seongshan@gmail.com [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-11-01

    Highlights: • Nanostructured CZTS films were grown at room temperature by using 355 nm laser. • CZTS films with E{sub g} of 1.9 eV have been obtained at 2 J cm{sup −2} at room temperature. • At high fluence, Cu/Sn rich droplets affected the overall quality of the films. • Improved crystallinity and E{sub g} of 1.5 eV was obtained at substrate temperature as low as 100 °C. - Abstract: In this work, we investigated on the growth of Cu{sub 2}ZnSnS{sub 4} films by using pulsed Nd:YAG laser (355 nm) ablation of a quaternary Cu{sub 2}ZnSnS{sub 4} target. Depositions were performed at laser fluence from 0.5 to 4 J cm{sup −2}. The films were grown at substrate temperature from 27 °C to 300 °C onto glass and silicon substrates. The dependence of the film morphology, composition, and optical properties are studied and discussed with respect to laser fluence and substrate temperature. Composition analysis from energy dispersive X-ray spectral results show that CZTS films with composition near stoichiometric were obtained at an optimized fluence at 2 J cm{sup −2} by 355 nm laser where the absorption coefficient is >10{sup 4} cm{sup −1}, and optical band gap from a Tauc plot was ∼1.9 eV. At high fluence, Cu and Sn rich droplets were detected which affect the overall quality of the films. The presence of the droplets was associated to the high degree of preferential and subsurface melting on the target during high fluence laser ablation. Crystallinity and optical band gap (1.5 eV) were improved when deposition was performed at substrate temperature of 100 °C.

  2. REVIEW ARTICLE: Nucleation, growth and characterization of cubic boron nitride (cBN) films

    Science.gov (United States)

    Zhang, W. J.; Chong, Y. M.; Bello, I.; Lee, S. T.

    2007-10-01

    Cubic BN (cBN) has a set of extreme properties similar or even superior to diamond. The advance of science and technology of cBN has however been severely hampered by the poor quality of the material available (random orientation, limited film thickness, poor crystallinity and adhesion with substrates due to a non-cubic BN interlayer). This paper reviews the recent progress in the nucleation, growth and characterization techniques of cBN films. It describes various successful approaches in interface engineering and growth techniques in increasing film thickness, improving crystallinity and adhesion of cBN films to the substrate, which are the major issues hindering cBN films for both mechanical and electronic applications. Based on observations of the surface and interface structures, we further discuss the growth mechanisms of cBN films via physical and chemical routes.

  3. Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates

    Science.gov (United States)

    Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    2016-04-01

    The aim of this paper is to expand the body of knowledge about the silicon doped gallium nitride thin films deposited on different substrates. The physical properties of the Si doped GaN thin films deposited on the glass and polyethylene terephthalate substrates by thermionic vacuum arc which is plasma production technique were investigated. Thermionic vacuum arc method is a method of producing pure material plasma. The Si doped GaN thin films were analyzed using the following methods and the devices: atomic force microscopy, x-ray diffraction device, spectroscopic ellipsometer and energy dispersive x-ray spectroscopy detector. The produced Si doped GaN thin films are in the (113) orientation. The thicknesses and refractive index were determined by using Cauchy dispersion model. Surface morphologies of produced thin films are homogenous and low roughness. Our analysis showed that the thermionic vacuum arc method present important advantages for optical and industrial applications.

  4. Effect of annealing process in TiO2 thin films: Structural, morphological, and optical properties

    Science.gov (United States)

    Dussan, A.; Bohórquez, A.; Quiroz, Heiddy P.

    2017-12-01

    This work presents a study of the structural, morphological, and optical properties of titanium dioxide thin films prepared via chemical bath deposition method, after being submitted to annealing processes varying the temperature from 373 to 723 K. The presence of the Rutile phase in all the samples was identified using X-ray diffraction measurements. When the annealing temperature increased to 723 K, the presence of the Anatase phase was observed. From scanning electron microscopy measurements, the formation of nanoflowers was also perceived; these flower-like structures are composed of nanorods of around ∼10 nm in length. With increasing annealing temperature, these structures disappear trans-forming into platelets distributed over the whole surface. A gap energy (Eg) of 3.0 eV was determined, and this value decreased to 2.98 eV after the temperature of T = 723 K was implemented, which is also where the Anatase phase was observed.

  5. Quantitative study of temperature-dependent order in thin films of cylindrical morphology block copolymer

    Science.gov (United States)

    Mishra, Vindhya; Kramer, Edward

    2010-03-01

    Disordering and defect generation in block copolymer systems at high temperatures is of significance to get a better understanding of the physics governing these systems, which can also direct efforts to minimize them. We have studied the smectic-nematic-isotropic transition in confined monolayers and bilayers of cylindrical morphology poly (styrene-b-2vinyl pyridine) diblock copolymer. Previous studies of melting phenomena in block copolymer thin films have relied on quantitative AFM studies alone. We have supplemented AFM studies with grazing incidence small angle X-ray diffraction lineshape analysis to quantify the decay of translational and orientational order with increasing temperature. The results have been interpreted in the context of the Toner-Nelson theory of melting for layered systems.

  6. Annealing induced morphological modifications in PTFE films deposited by magnetron sputtering

    Science.gov (United States)

    Tripathi, S.; De, Rajnarayan; Rao, K. Divakar; Haque, S. Maidul; Misal, J. S.; Prathap, C.; Das, S. C.; Ganesan, V.; Sahoo, N. K.

    2017-05-01

    As grown RF magnetron sputtered polytetrafluoroethylene (PTFE) thin films were subjected to vacuum annealing at optimized elevated temperature of 200° C for varying time duration and corresponding surface morphological changes were recorded. The columnar structures appearing after an annealing duration of 2 hours are interesting for fabrication of rough PTFE surfaces towards possible applications in hydrophobicity along with high transmission. Supported by transmission data, the AFM images show a transformation of smooth PTFE surface with less than 2 nm rms roughness to a very rough surface. The results are interpreted in terms of thermal energy induced modifications only at the surface without any change in the original bonding structure on the surface and inside the sample. Preliminary studies indicate that the optimization of roughness and transmission together on such surfaces may lead to high water contact angles.

  7. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Science.gov (United States)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  8. Growth, luminescence and magnetic properties of GaN:Er semiconductor thin films grown by molecular beam epitaxy

    Science.gov (United States)

    Dasari, K.; Wu, J.; Huhtinen, H.; Jadwisienczak, W. M.; Palai, R.

    2017-05-01

    We report on the growth, surface, luminescence and magnetic properties of 180 nm thick Er-doped GaN thin films grown by molecular beam epitaxy (MBE) on c-sapphire substrates with no buffer layer and with different Er concentrations. In situ reflection high-energy electron diffraction (RHEED) patterns revealed crystalline and uniform growth of the films. The x-ray diffraction (XRD) pattern showed c-axis-oriented growth. Atomic force microscopy (AFM) analysis showed enhancement of surface morphology and smoothness with increasing Er doping, which could be due to minimization of surface defects because of the gettering effect of the rare earth. Scanning area-dependent surface morphology analysis showed a power law dependence indicating the fractal nature of the surface, which is confirmed by the observation of a non-integer D (fractal dimension) value. X-ray photoluminescence spectroscopy (XPS) revealed the formation of a GaN:Er phase and ruled out the presence of Ga and Er metallic and native oxide phases. The semi-quantitative elemental composition of the films was determined using N 1s, Ga 2p3/2 and Er 4d photoemission lines. The Er concentration was estimated from the x-ray photoelectron spectra and found to be between 3.0 and 9.0 at.% (˜1021 atoms cm-3). Photoluminescence (PL) and cathodoluminescence (CL) studies showed visible emission and concentration quenching of Er3+ ions in agreement with reported results. Excitation of the Er3+ ion might be affected by charge trapping due to Er-doping-induced defect complexes. The magnetic measurements carried out by a superconducting quantum interference device (SQUID) showed a ferromagnetic-paramagnetic phase transition at low temperature, contrary to the reported room temperature ferromagnetism in metalorganic chemical vapor deposition (MOCVD)-grown GaN:Er thick films of 550 nm.

  9. PREMATURE BIRTH, MORPHOLOGY OF PLACENTA AND INTRAUTERINE GROWTH RETARDATION

    Directory of Open Access Journals (Sweden)

    L.V. Vasilenko

    2007-09-01

    Full Text Available Retrospectively studied following and outcome of pregnancy, women with non carrying of pregnancy, women that give birth to children with development delay (1 group and women that give birth in proper time (2 group. Premature birth arranged 4,4% of 2962 delivery. Fetus development delay was established by 38,1% of premature babies and by 10,5% of borne in proper time. Non carrying of pregnancy stipulated by motherґs urogenital infection, high expressed gestosis and others obsterical and extra genital complications. Each third of women that give birth to premature babies with development delay, have inflammatory overpatching in placenta, each fifth have morphological proved FPI. Realized researches allowed to conclude, that for decreasing frequencies of premature births and fetus development delay is necessary doing opportunely urogenital tract sonation, pre-clinical diagnostics of gestosis Noncarryng of pregnancy and treat this disease preventive.

  10. Anodic oxide films on tungsten

    International Nuclear Information System (INIS)

    Di Paola, A.; Di Quarto, F.; Sunseri, C.

    1980-01-01

    Scanning electron microscopy was used to investigate the morphology of anodic oxide films on tungsten, obtained in various conditions of anodization. Studies were made of the growth of porous films, whose thickness increases with time and depends upon the current density. Temperature and electrolyte composition influence the film morphology. Gravimetric measurements of film dissolution at 70 0 C show that after a transient time, the rate of metal dissolution and that of film formation coincide. The porous films thicken because tungsten dissolves as WO 2 2+ and precipitates as WO 3 .H 2 O. (author)

  11. Mathematical modelling of thin films growth and calculation of coefficients reflection, transmission and absorption waves

    Science.gov (United States)

    Istratov, A. V.; Gerke, M. N.

    2018-01-01

    Progress in nano- and microsystem technology is directly related to the development of thin-film technologies. At the present time, thin metal films can serve as the basis for the creation of new instruments for nanoelectronics. One of the important parameters of thin films affecting the characteristics of devices is their optical properties. That is why the island structures, whose optical properties, can change in a wide range depending on their morphology, are of increasing interest. However, despite the large amount of research conducted by scientists from different countries, many questions about the optimal production and use of thin films remain unresolved.

  12. The Impact of Morphology and Composition on the Resistivity and Oxidation Resistance of Metal Nanostructure Films

    Science.gov (United States)

    Stewart, Ian Edward

    Printed electronics, including transparent conductors, currently rely on expensive materials to generate high conductivity devices. Conductive inks for thick film applications utilizing inkjet, aerosol, and screen printing technologies are often comprised of expensive and rare silver particles. Thin film applications such as organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs) predominantly employ indium tin oxide (ITO) as the transparent conductive layer which requires expensive and wasteful vapor deposition techniques. Thus an alternative to silver and ITO with similar performance in printed electronics warrants considerable attention. Copper nanomaterials, being orders of magnitude cheaper and more abundant than silver or indium, solution-coatable, and exhibiting a bulk conductivity only 6 % less than silver, have emerged as a promising candidate for incorporation in printed electronics. First, we examine the effect of nanomaterial shape on the conductivity of thick films. The inks used in such films often require annealing at elevated temperature in order to sinter the silver nanoparticles together and obtain low resistivities. We explore the change in morphology and resistivity that occurs upon heating thick films of silver nanowires (of two different lengths, Ag NWs), nanoparticles (Ag NPs), and microflakes (Ag MFs) deposited from water at temperatures between 70 and 400 °C. At the lowest temperatures, longer Ag NWs exhibited the lowest resistivity (1.8 x 10-5 O cm), suggesting that the resistivity of thick films of silver nanostructures is dominated by the contact resistance between particles. This result supported previous research showing that junction resistance between Ag NWs in thin film conductors also dominates optoelectronic performance. Since the goal is to replace silver with copper, we perform a similar analysis by using a pseudo-2D rod network modeling approach that has been modified to include lognormal distributions in length

  13. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Infrared spectroscopic study reveals that films grown above 600°C are free of carbon. Keywords. MOCVD; thin films .... Simultaneous thermogravimetry and differential thermal analysis (TG/DTA) of the complex was carried ..... quality thin films of rare earth oxides by MOCVD, using the phenanthroline adducts of pentadionate ...

  14. Ultrahigh PEMFC performance of a thin-film, dual-electrode assembly with tailored electrode morphology.

    Science.gov (United States)

    Jung, Chi-Young; Kim, Tae-Hyun; Yi, Sung-Chul

    2014-02-01

    A dual-electrode membrane electrode assembly (MEA) for proton exchange membrane fuel cells with enhanced polarization under zero relative humidity (RH) is fabricated by introducing a phase-separated morphology in an agglomerated catalyst layer of Pt/C (platinum on carbon black) and Nafion. In the catalyst layer, a sufficient level of phase separation is achieved by dispersing the Pt catalyst and the Nafion dispersion in a mixed-solvent system (propane-1,2,3-triol/1-methyl-2-pyrrolidinone).The high polymer chain mobility results in improved water uptake and regular pore-size distribution with small pore diameters. The electrochemical performance of the dual-film electrode assembly with different levels of phase separation is compared to conventional electrode assemblies. As a result, good performance at 0 % RH is obtained because self-humidification is dramatically improved by attaching this dense and phase-separated catalytic overlayer onto the conventional catalyst layer. A MEA prepared using the thin-film, dual-layered electrode exhibits 39-fold increased RH stability and 28-fold improved start-up recovery time during the on-off operation relative to the conventional device. We demonstrate the successful operation of the dual-layered electrode comprised of discriminatively phase-separated agglomerates with an ultrahigh zero RH fuel-cell performance reaching over 95 % performance of a fully humidified MEA. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Morphology, thermal, mechanical, and barrier properties of graphene oxide/poly(lactic acid) nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong Woo; Choi, Hyun Muk [Kyonggi University, Suwon (Korea, Republic of)

    2016-01-15

    To improve the physical and gas barrier properties of biodegradable poly(lactic acid) (PLA) film, two graphene nanosheets of highly functionalized graphene oxide (0.3 wt% to 0.7 wt%) and low-functionalized graphene oxide (0.5 wt%) were incorporated into PLA resin via solution blending method. Subsequently, we investigated the effects of material parameters such as loading level and degree of functionalization for the graphene nanosheets on the morphology and properties of the resultant nanocomposites. The highly functionalized graphene oxide (GO) caused more exfoliation and homogeneous dispersion in PLA matrix as well as more sustainable suspensions in THF, compared to low-functionalized graphene oxide (LFGO). When loaded with GO from 0.3 wt% to 0.7 wt%, the glass transition temperature, degree of crystallinity, tensile strength and modulus increased steadily. The GO gave rise to more pronounced effect in the thermal and mechanical reinforcement, relative to LFGO. In addition, the preparation of fairly transparent PLA-based nanocomposite film with noticeably improved barrier performance achieved only when incorporated with GO up to 0.7wt%. As a result, GO may be more compatible with hydrophilic PLA resin, compared to LFGO, resulting in more prominent enhancement of nanocomposites properties.

  16. [Morphology of the Meibomian lipid film. Results of Brewster angle microscopy].

    Science.gov (United States)

    Kaercher, T; Hönig, D; Möbius, D; Welt, R

    1995-02-01

    Meibomian lipid layers were studied in the anterior mirror area by reflecting microscopy and interference microscopy. Using these techniques, it was not possible to correlate the biophysical and morphological data. Brewster angle microscopy provides direct observation of the spread Meibomian lipid layer with simultaneous registration of the surface pressure. It is based on the fact that He-Ne laser light, which is incident at a water surface under the Brewster angle, does not reflect visible light. After spreading of a lipid film, the angle of the incident light beam varies, causing reflection of light. The Meibomian lipid layer was studied in a Langmuir-type trough. At 5.0 mN/m the lipid layers are homogeneous and mobile, consisting of areas of higher and lower reflectivity. In patients with meibomitis the films are inhomogeneous and immobile. The thickness of the areas of lower reflectivity is 2 nm, the high reflectivity lipids are 8-10 nm thick. According to these results, Meibomian gland secretion can form monolayers under in vitro conditions.

  17. Polymer Brush Grafted Nanoparticles and Their Impact on the Morphology Evolution of Polymer Blend Films

    Science.gov (United States)

    Chung, Hyun-Joong; Ohno, Kohji; Composto, Russell

    2013-03-01

    We present an novel pathway to control the location of nanoparticles (NPs) in phase-separating polymer blend films containing poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN). Because hydrophobic polymer phases have a small interfacial energy, ~1 mJ/m2, subtle changes in the NP surface functionality can be used to guide NPs to either the interface between immiscible polymers or into one of the phases. Based on this idea, we designed a class of NPs grafted with PMMA brushes. These PMMA brushes were grown from the NP surface by atom transfer radical polymerization (ATRP), which results in chains terminated with chlorine atoms. The chain end can be substituted with protons (H) by dehalogenation. As a result, the NPs are strongly segregated at the interface when grafted PMMA chains are short (Mn =1.8K) and the end group is Cl, whereas NPs partition into PMMA-rich phase when chains are long (Mn =160K) and/or when chains are terminated with hydrogen. The Cl end groups and shorter chain length cause an increase in surface energy for the NPs. The increase in surface energy of short-chained NPs can be attributed to (i) an extended brush conformation (entropic) and/or (ii) a high density of ``unfavorable'' end groups (enthalpic). Finally, the impact of NPs on the morphological evolution of the polymer blend films will be discussed. Ref: H.-J.Chung et al., ACS Macro Lett. 1(1), 252-256 (2012).

  18. Morphology, thermal, mechanical, and barrier properties of graphene oxide/poly(lactic acid) nanocomposite films

    International Nuclear Information System (INIS)

    Kim, Seong Woo; Choi, Hyun Muk

    2016-01-01

    To improve the physical and gas barrier properties of biodegradable poly(lactic acid) (PLA) film, two graphene nanosheets of highly functionalized graphene oxide (0.3 wt% to 0.7 wt%) and low-functionalized graphene oxide (0.5 wt%) were incorporated into PLA resin via solution blending method. Subsequently, we investigated the effects of material parameters such as loading level and degree of functionalization for the graphene nanosheets on the morphology and properties of the resultant nanocomposites. The highly functionalized graphene oxide (GO) caused more exfoliation and homogeneous dispersion in PLA matrix as well as more sustainable suspensions in THF, compared to low-functionalized graphene oxide (LFGO). When loaded with GO from 0.3 wt% to 0.7 wt%, the glass transition temperature, degree of crystallinity, tensile strength and modulus increased steadily. The GO gave rise to more pronounced effect in the thermal and mechanical reinforcement, relative to LFGO. In addition, the preparation of fairly transparent PLA-based nanocomposite film with noticeably improved barrier performance achieved only when incorporated with GO up to 0.7wt%. As a result, GO may be more compatible with hydrophilic PLA resin, compared to LFGO, resulting in more prominent enhancement of nanocomposites properties.

  19. Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films.

    Science.gov (United States)

    Pothiraja, Ramasamy; Milanov, Andrian P; Barreca, Davide; Gasparotto, Alberto; Becker, Hans-Werner; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-04-21

    Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(iv) [Hf((i)PrNC(O)O(i)Pr)(4)] () and tetrakis-N,N,N'-trialkylureato hafnium(iv) [Hf((i)PrNC(O)N-(Me)Et)(4)] (), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO(2) thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.

  20. Hydrodynamic effects on phase separation morphologies in evaporating thin films of polymer solutions

    Science.gov (United States)

    Zoumpouli, Garyfalia A.; Yiantsios, Stergios G.

    2016-08-01

    We examine effects of hydrodynamics on phase separation morphologies developed during drying of thin films containing a volatile solvent and two dissolved polymers. Cahn-Hilliard and Flory-Huggins theories are used to describe the free energy of the phase separating systems. The thin films, considered as Newtonian fluids, flow in response to Korteweg stresses arising due to concentration non-uniformities that develop during solvent evaporation. Numerical simulations are employed to investigate the effects of a Peclet number, defined in terms of system physical properties, as well as the effects of parameters characterizing the speed of evaporation and preferential wetting of the solutes at the gas interface. For systems exhibiting preferential wetting, diffusion alone is known to favor lamellar configurations for the separated phases in the dried film. However, a mechanism of hydrodynamic instability of a short length scale is revealed, which beyond a threshold Peclet number may deform and break the lamellae. The critical Peclet number tends to decrease as the evaporation rate increases and to increase with the tendency of the polymers to selectively wet the gas interface. As the Peclet number increases, the instability moves closer to the gas interface and induces the formation of a lateral segregation template that guides the subsequent evolution of the phase separation process. On the other hand, for systems with no preferential wetting or any other property asymmetries between the two polymers, diffusion alone favors the formation of laterally separated configurations. In this case, concentration perturbation modes that lead to enhanced Korteweg stresses may be favored for sufficiently large Peclet numbers. For such modes, a second mechanism is revealed, which is similar to the solutocapillary Marangoni instability observed in evaporating solutions when interfacial tension increases with the concentration of the non-volatile component. This mechanism may lead

  1. Altering the expression of two chitin synthase genes differentially affects the growth and morphology of Aspergillus oryzae

    DEFF Research Database (Denmark)

    Müller, Christian; Hjort, C.M.; Hansen, K.

    2002-01-01

    was induced in the strain containing the p(niiA)-chsB construct, the strain displayed wild-type morphology on solid medium and at sub-maximum growth rates but the wild-type morphology was not fully restored during rapid growth in batch cultivation. The csmA disruption strain displayed morphological...

  2. A Study on Organic-Metal Halide Perovskite Film Morphology, Interfacial Layers, Tandem Applications, and Encapsulation

    Science.gov (United States)

    Fisher, Dallas A.

    Organic-metal halide perovskites have brought about a new wave of research in the photovoltaic community due to their ideally suited optical and electronic parameters. In less than a decade, perovskite solar cell performance has skyrocketed to unprecedented efficiencies with numerous reported methodologies. Perovskites face many challenges with high-quality film morphology, interfacial layers, and long-term stability. In this work, these active areas are explored through a combination of studies. First, the importance of perovskite film precursor ratios is explored with an in-depth study of carrier lifetime and solvent-grain effects. It was found that excess lead iodide precursor greatly improves the film morphology by reducing pinholes in the solar absorber. Dimethyl sulfoxide (DMSO) solvent was found to mend grains, as well as improve carrier lifetime and device performance, possibly by passivation of grain boundary traps. Second, applications of perovskite with tandem cells is investigated, with an emphasis for silicon devices. Perovskites can easily be integrated with silicon, which already has strong market presence. Additionally, both materials' bandgaps are ideally suited for maximum tandem efficiency. The silicon/perovskite tandem device structure necessitated the optimization of inverted (p-i-n) structure devices. PEDOT:PSS, copper oxide, and nickel oxide p-type layers were explored through a combination of photoluminescent, chemical reactivity, and solar simulation results. Results were hindered due to resistive ITO and rough silicon substrates, but tandem devices displayed Voc indicative of proper monolithic performance. Third, replacement of titanium dioxide n-type layer with iron oxide (Fe 2O3, common rust) was studied. Iron oxide experiences less ultraviolet instability than that of titanium dioxide under solar illumination. It was found that current density slightly decreased due to parasitic absorption from the rust, but that open circuit voltage

  3. Growth and structure of thermally evaporated Bi{sub 2}Te{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Budnik, A.V. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine); Dobrotvorskaya, M.V.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Nashchekina, O.N.; Sipatov, A.Yu. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze St., Kharkov 61002 (Ukraine)

    2016-08-01

    The growth mechanism, microstructure, and crystal structure of the polycrystalline n-Bi{sub 2}Te{sub 3} thin films with thicknesses d = 15–350 nm, prepared by thermal evaporation in vacuum onto glass substrates, were studied. Bismuth telluride with Te excess was used as the initial material for the thin film preparation. The thin film characterization was performed using X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, scan electron microscopy, and electron force microscopy. It was established that the chemical composition of the prepared films corresponded rather well to the starting material composition and the films did not contain any phases apart from Bi{sub 2}Te{sub 3}. It was shown that the grain size and the film roughness increased with increasing film thickness. The preferential growth direction changed from [00l] to [015] under increasing d. The X-ray photoelectron spectroscopy studies showed that the thickness of the oxidized surface layer did not exceed 1.5–2.0 nm and practically did not change in the process of aging at room temperature, which is in agreement with the results reported earlier for single crystals. The obtained data show that using simple and inexpensive method of thermal evaporation in vacuum and appropriate technological parameters, one can grow n-Bi{sub 2}Te{sub 3} thin films of a sufficiently high quality. - Highlights: • The polycrystalline n-Bi{sub 2}Te{sub 3} thin films were grown thermal evaporation onto glass. • The growth mechanism and film structure were studied by different structure methods. • The grain size and film roughness increased with increasing film thickness. • The growth direction changes from [00l] to [015] under film thickness increasing. • The oxidized layer thickness (1–2 nm) did not change under aging at room temperature.

  4. Morphology and thermal properties of PLA films plasticized with aliphatic oligoesters; Morfologia e propriedades termicas de filmes de PLA plastificados com oligoesteres alifaticos

    Energy Technology Data Exchange (ETDEWEB)

    Inacio, Erika M.; Dias, Marcos L., E-mail: erika.minacio@ima.ufrj.br [Universidade Federal do Rio de Janeiro (UFRJ), Rio de Janeiro, RJ (Brazil); Lima, Maria Celiana P. [Instituto Federal do Rio de Janeiro (IFRJ), Duque de Caxias, RJ (Brazil)

    2015-07-01

    The addition of plasticizers to poly(lactic acid) (PLA) is one of the known ways of changing its ductility, making possible the modification of its mechanical and thermal properties. In this work, it was synthesized two biodegradable aliphatic oligoesters: oligo(trimethylene sebacate) (OST) and oligo(trimethylene malonate) (OMT), and these oligomers were used as plasticizer in cast films of commercial film grade PLA at concentrations of 1, 5 and 10 wt% of each plasticizer. X-ray diffraction (XRD) was used to investigate the morphology and differential scanning calorimetry (DSC) was also used aiming the evaluation of the thermal properties of these films. The PLA films containing no plasticizer showed an amorphous behavior, and the addition of PMT on the PLA films acted, simultaneously, decreasing the Tg, and rising the material's crystallinity. In contrast, the increased addition of OST to the PLA films did not change the Tg, and equally, did not have a significant changes in the material's crystallinity. Therefore, it was possible to observe the effect of the concentration of oligomers on the crystallinity of the films as well as the no plasticizer effect of the OST. (author)

  5. Growth, structure and magnetic properties of magnetron sputtered FePt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cantelli, Valentina

    2010-07-01

    The L1{sub 0} FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L1{sub 0} phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt-L1{sub 0} selforganized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were investigated. The work is focused on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (cosputtering vs. layer - by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3-3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320{+-}20) C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L1{sub 0}-FePt films were obtained on a-SiO{sub 2} after vacuum annealing. L1{sub 0}-FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly

  6. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  7. Pulsed laser deposition growth of FeSb2 films for thermoelectric applications

    DEFF Research Database (Denmark)

    Sun, Ye; Canulescu, Stela; Sun, Peijie

    2011-01-01

    FeSb2 films were produced in a low-pressure Ar environment by pulsed laser deposition at 355 nm. The influence of growth parameters such as substrate temperature, Ar pressure and deposition time on the growth of FeSb2 films was studied. Nearly phase-pure FeSb2 films with thicknesses of 100–400 nm...... properties of FeSb2 films if they are to eventually reach thermoelectric applications at cryogenic temperatures.......FeSb2 films were produced in a low-pressure Ar environment by pulsed laser deposition at 355 nm. The influence of growth parameters such as substrate temperature, Ar pressure and deposition time on the growth of FeSb2 films was studied. Nearly phase-pure FeSb2 films with thicknesses of 100–400 nm...... were produced at 425 °C with an Ar pressure of 1.5–2 Pa. Thermal transport and Hall measurements were performed to explore the thermoelectric transport properties of the FeSb2 films. A maximum thermopower of 120 μVK−1 at 40 K was obtained. In general it is highly important to understand the growth...

  8. Large area porous gold films deposited by evaporation-induced colloidal crystal growth.

    Science.gov (United States)

    Zhang, Renyun; Hummelgård, Magnus; Olin, Håkan

    2009-12-01

    Films that are nanostructured in two- or three-dimensions, such as porous ones, are made by several methods including templated growth and self-assembly. Here, we report on a new method that is based on evaporation-induced growth of nanoparticle gold films on a water surface. The film growth was done in a similar way to the well-known evaporation-induced colloidal crystal growth method, but in contrast, we did not directly deposit the film on a solid substrate. The films were instead created on top of a water surface. After the growth process, the films were deposited directly on substrates by a simple pick-up procedure. The deposited porous gold films were uniform with a thickness of 100 nm and had a sheet resistance of 100 Omega/sq. There are several advantages with our method, including simplicity of the protocol, large film area, flexibility in the choice of substrate to be coated, and the ability for multilayer coatings. The latter points to opportunities for fabrication of multilayer 3D porous structure, which may have wide applications in sensors and electrochemical determinations.

  9. Influence of the substrate on the morphological evolution of gold thin films during solid-state dewetting

    Energy Technology Data Exchange (ETDEWEB)

    Nsimama, Patrick D. [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany); Dar Es Salaam Institute of Technology, P.O. Box 2958, Dar Es Salaam (Tanzania, United Republic of); Herz, Andreas; Wang, Dong [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany); Schaaf, Peter, E-mail: peter.schaaf@tu-ilmenau.de [TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies MacroNano, Chair Materials for Electrical Engineering and Electronics, 98693 Ilmenau (Germany)

    2016-12-01

    Highlights: • Dewetting of thin gold films is faster on TiO{sub 2} than on SiO{sub 2}. • Dewetting of thin gold films is faster on amorphous TiO{sub 2} than on crystalline TiO{sub 2}. • The kinetics is attributed to the energy of adhesion. • The morphology of thin Au films deposited on TiO{sub 2} substrates is different to those deposited on SiO{sub 2} substrates. • The dewetting activation energy of Au films deposited on crystalline substrates was higher than the activation energy of Au nanofilms deposited on amorphous TiO{sub 2} substrates. - Abstract: The evolution of electron-beam evaporated Au thin films deposited on crystalline TiO{sub 2} (c-TiO{sub 2}) and amorphous TiO{sub 2} (a-TiO{sub 2}) as well as amorphous SiO{sub 2} substrates are investigated. The kinetic of dewetting is clearly dependent on the type of substrate and is faster on TiO{sub 2} substrates than on SiO{sub 2} substrates. This difference can result from the difference in adhesion energy. Furthermore, the kinetic of dewetting is faster on a-TiO{sub 2} than on c-TiO{sub 2}, possibly due to the crystallization of TiO{sub 2} during annealing induced dewetting process. The morphologies of dewetted Au films deposited on crystalline TiO{sub 2} are characterized by branched holes. The XRD patterns of the Au films deposited on TiO{sub 2} substrates constituted peaks from both metallic Au and anatase TiO{sub 2}. The activation energy of Au films deposited on crystalline TiO{sub 2} substrates was higher than that that of the films deposited on amorphous TiO{sub 2} substrates.

  10. Structural, morphological and local electric properties of TiO2 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gyoergy, E; Pino, A Perez del; Sauthier, G; Figueras, A; Alsina, F; Pascual, J

    2007-01-01

    Titanium dioxide (TiO 2 ) thin films were synthesized on (1 0 0) Si substrates by reactive pulsed laser deposition (PLD) technique. A frequency quadrupled Nd : YAG (λ = 266 nm, τ FWHM ≅ 5 ns, ν = 10 Hz) laser source was used for the irradiations of metallic Ti targets. The experiments were performed in controlled oxygen atmosphere. Crystallinity, surface morphology and local electric properties of the obtained oxide thin films were investigated by x-ray diffractometry, micro-Raman spectroscopy and current sensing atomic force microscopy. An inter-relation was found between the surface morphology, the crystalline structure and the nano-scale electric properties which open the possibility of synthesizing by the PLD technique TiO 2 thin films with tunable functional properties for future applications such as photocatalysts, gas sensors or solar energy converters

  11. Screen-printed carbon electrode modified on its surface with amorphous carbon nitride thin film: Electrochemical and morphological study

    Energy Technology Data Exchange (ETDEWEB)

    Ghamouss, F. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France); Tessier, P.-Y. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Djouadi, A. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Besland, M.-P. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Boujtita, M. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France)]. E-mail: mohammed.boujtita@univ-nantes.fr

    2007-04-20

    The surface of a screen-printed carbon electrode (SPCE) was modified by using amorphous carbon nitride (a-CN {sub x}) thin film deposited by reactive magnetron sputtering. Scanning electron microscopy and photoelectron spectroscopy measurements were used to characterise respectively the morphology and the chemical structure of the a-CN {sub x} modified electrodes. The incorporation of nitrogen in the amorphous carbon network was demonstrated by X ray photoelectron spectroscopy. The a-CN {sub x} layers were deposited on both carbon screen-printed electrode (SPCE) and silicon (Si) substrates. A comparative study showed that the nature of substrate, i.e. SPCE and Si, has a significant effect on both the surface morphology of deposited a-CN {sub x} film and their electrochemical properties. The improvement of the electrochemical reactivity of SPCE after a-CN {sub x} film deposition was highlighted both by comparing the shapes of voltammograms and calculating the apparent heterogeneous electron transfer rate constant.

  12. Thin film modeling of crystal dissolution and growth in confinement

    Science.gov (United States)

    Gagliardi, Luca; Pierre-Louis, Olivier

    2018-01-01

    We present a continuum model describing dissolution and growth of a crystal contact confined against a substrate. Diffusion and hydrodynamics in the liquid film separating the crystal and the substrate are modeled within the lubrication approximation. The model also accounts for the disjoining pressure and surface tension. Within this framework, we obtain evolution equations which govern the nonequilibrium dynamics of the crystal interface. Based on this model, we explore the problem of dissolution under an external load, known as pressure solution. We find that in steady state, diverging (power-law) crystal-surface repulsions lead to flat contacts with a monotonic increase of the dissolution rate as a function of the load. Forces induced by viscous dissipation then surpass those due to disjoining pressure at large enough loads. In contrast, finite repulsions (exponential) lead to sharp pointy contacts with a dissolution rate independent of the load and the liquid viscosity. Ultimately, in steady state, the crystal never touches the substrate when pressed against it. This result is independent from the nature of the crystal-surface interaction due to the combined effects of viscosity and surface tension.

  13. Fabrication Of YSZ Thin Film By Electrochemical Deposition Method And The Effect Of The Pulsed Electrical Fields For Morphology Control

    Directory of Open Access Journals (Sweden)

    Fujita T.

    2015-06-01

    Full Text Available In this study, surface morphology control ions in a precursor solution and patterning the YSZ film has been carried out during deposition of thin film from a precursor solution by applying the electrical field for deposition and the pulsed electrical field. The precursor solution was mixed them of ZrO(NO34, Y(NO33-6H2O into deionized water, and then was controlled nearly pH3 by adding NH3(aq. The thin film was deposited on the glass substrate of the minus electrode side by applying the electrical field of 3.0 V for 20 min. In addition, another pulsed voltage was applied to the electrical field along the perdicular direction to the film deposition direction. After annealing samples at 773 K for 6 h in air, the film was crystallized and obtained YSZ film. In the limited condition, the linear patterns of YSZ films due to the frequency of the applied electrical field were observed. It is expected that ions in a precursor solution are controlled by applying the pulsed voltage and the YSZ film is patterned on the substrate.

  14. Microstructural and Morphological Properties of Nanocrystalline Cu2ZnSnSe4 Thin Films: Identification New Phase on Structure

    International Nuclear Information System (INIS)

    Quiroz, Heiddy P; Seña, N J; Dussan, A

    2014-01-01

    This paper presents a study of the structural and morphological properties of thin films of compound Cu 2 ZnSnSe 4 . Mass (M X ) and temperature of the substrate (T S(Cu) ) of compound copper (Cu), were varied. All samples were deposited by co-evaporation method in three stages. From measurements of X-ray diffraction it was possible to establish with TS increasing the presence of associated binary phases quaternary compound during the growth process of the material. It was found that the main peak around, 2θ= 27.1°, predominate binary phases Cu 1.8 Se and ZnSe. Measurements of X-ray diffraction were performed to pure binary compounds, showing a peak corresponding to the main peak found around the compound. Raman shifts showed associated binary compounds with the observed by XRD. In this work, we report for the first time the binary phase identification Cu 1.8 Se and ZnSe as part of the structure of the stannite CZTSe. Since the Scherrer equation was found that the crystallite sizes ranged between 30 and 40 nm. A correlation between structure and topography superficial is presented

  15. Growth, Properties and Applications of Mo Ox Thin-Films Deposited by Reactive Sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis

    Transition metal-oxide (TMOs) thin-films are commonly used in optoelectronic devices such as in photovoltaics and light emitting diodes, using both organic, inorganic and hybrid technologies. In such devices, TMOs typically act as an interfacial layer, where its functionality is to facilitate hole...... properties of metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties, and thus also their integration in novel optoelectronic devices. In this work, MoOx thin-films with various different phases and compositions were prepared by direct-current reactive...... and electrical properties of the films. Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) were applied to assess the surface morphology and crystallography of the films. In this thesis, changes in the electronic properties of the surface upon crystallization of the films were furthermore...

  16. Optical, Electrical, and Morphological Effects of Yttrium Doping of Cadmium Oxide Thin Films Grown by Ultrasonic Spray Pyrolysis

    Science.gov (United States)

    Tombak, Ahmet; Baturay, Silan; Kilicoglu, Tahsin; Ocak, Yusuf Selim

    2017-04-01

    CdO films doped with Y concentrations of 0%, 1%, 2%, and 3% were deposited onto soda lime glass using ultrasonic spray pyrolysis. The effect of the doping level on the structural, morphological, optical, and electrical properties of the films was characterized. X-ray diffraction analysis was used to establish that all of the samples were polycrystalline and to determine the structural parameters, i.e., lattice spacing ( d), phases and associated ( hkl) planes, grain size ( D), and dislocation density ( δ). The films possessed high conductivity and carrier concentration, showing n-type semiconducting behavior. The films were almost transparent over the range from 600 nm to 1100 nm. The energy bandgap was 2.43 eV, 2.53 eV, 2.68 eV, and 2.70 eV for Y doping of 0%, 1%, 2%, and 3%, respectively. The refractive index and extinction coefficient of the films over the range from 700 nm to 1100 nm were determined by spectroscopic ellipsometry. Atomic force microscopy revealed the effect of Y doping on the surface morphology of the CdO films.

  17. The effects of ultraviolet radiation on the growth and gross morphology of Zea mays, Linn. seedlings

    International Nuclear Information System (INIS)

    Martin, Ann Kristine Joy T.; Mendiola, Carlo Paulo T.

    2000-03-01

    The study was conducted with a descriptive experimental design in order to determine the effects of broad spectrum ultraviolet radiation on growth factors, seedling height, root length, chlorophyll content, organic weights, and percentage survival, as well as gross morphological factors, leaf, stem, and root appearance, of native sweet corn seedlings. The study was limited to the seedling stage of the plant and observations were taken after 20 days of treatment. The results gathered show that there was a visible manifestation of the detrimental effects of UV on the irradiated seedlings. There were observed decreases in the growth parameters while the gross morphological parameters exhibited signs of wilting and stress. It was therefore concluded that based on the observed results, UV had a detrimental effect on the studied growth and gross morphological parameters. (Author)

  18. Early Craniofacial Morphology and Growth in Children With Nonsyndromic Robin Sequence

    DEFF Research Database (Denmark)

    Hermann, N. V.; Kreiborg, S.; Darvann, Tron Andre

    2003-01-01

    Purpose: Craniofacial morphology and growth comparisons in children with untreated nonsyndromic Robin Sequence (RS) and a control group with unilateral incomplete cleft lip (UICL) in which the lip was surgically closed at 2 months of age. Material: The 52 children (7 RS and 45 UICL) included...... in the study were drawn from a group representing all Danish cleft children born 1976 through 1981. The ages of the children were 2 and 22 months at the time of examination 1 and 2, respectively. Method: The method of investigation was three-projection cephalometry. Craniofacial morphology was analyzed...... toward a more vertical growth direction was observed in the RS group. Conclusion: Facial morphology in children with RS differed significantly from that of children with UICL at both 2 and 22 months of age. The magnitude of facial growth was similar in the two groups, whereas a tendency toward a more...

  19. Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry

    Directory of Open Access Journals (Sweden)

    Alexander S. Gusev

    2015-12-01

    Full Text Available Thin films of silicon carbide possessing unique properties attract increasing attention of researchers both in the field of semiconductor physics and in the technology of new semiconductor devices for high power, RF and optoelectronics. The growth of the production of silicon carbide based devices promotes the search for more resource saving and safe SiC layer synthesis technologies. Potential method is pulse laser deposition (PLD in vacuum. This technology does not require the use of chemically aggressive and explosive gases and allows forming thin and continuous coatings with thicknesses of from several nanometers at relatively low substrate temperatures. Submicron thickness silicon carbide films have been grown on single crystal silicon by vacuum laser ablation of a ceramic target. The physical and technological parameters of silicon carbide thin film low temperature synthesis by PLD have been studied and, in particular, the effect of temperature and substrate crystalline orientation on the composition, structural properties and morphology of the surface of the experimental specimens has been analyzed. At above 500 °C the crystalline β-SiC phase forms on Si (100 and (111. At a substrate temperature of 950 °C the formation of textured heteroepitaxial 3C–SiC films was observed.

  20. Growth and BZO-doping of the nanostructured YBCO thin films on buffered metal substrates

    DEFF Research Database (Denmark)

    Huhtinen, H.; Irjala, M.; Paturi, P.

    2010-01-01

    The growth of the nanostructured YBa2Cu3O6+x (YBCO) films is investigated for the first time on biaxially textured NiW substrates used in coated conductor technology. The optimization process of superconducting layers is made in wide magnetic field and temperature range in order to understand...... the vortex pinning structure and mechanism in our films prepared from nanostructured material. Structural analysis shows that growth mechanism in YBCO films grown on NiW is completely different when compared to YBCO on STO. Films on NiW are much rougher, there is huge in-plane variation of YBCO crystals...... and moreover out-of-plane long range lattice ordering is greatly reduced. Magnetic measurements demonstrate that jc in films grown on NiW is higher in high magnetic fields and low temperatures. This effect is connected to the amount of pinning centres observed in films on metal substrates which are effective...

  1. Growth of ferroelectric CaBi_2Ta_2O9 Thin Film Using rf Magnetron Sputtering

    Science.gov (United States)

    Peng, Jin; Huang, Z. J.; Jiang, Q. D.; Brazdeikis, A.; Zhang, Z. H.; Liu, J. R.; Chu, W. K.; Chu, C. W.

    1998-03-01

    Ferroelectric CaBi_2Ta_2O_9(CBTO) films were deposited at various temperature on SrTiO_3(001) and SrTiO_3(111), MgO(001) and R-cut sapphire and Pt-buffered SrTiO3 (001) and SrTi O_3(111), MgO(001) and R-cut sapphire substrate by rf magnetron sputtering. It is found that crystallinity and chemical composition of CBTO thin films were strongly dependent on substrate and temperature. X-ray diffraction, scanning electron microscopy, atomic force microscopy and rutherford backscattering were employed to examine the structure, surface morphology and composition. In addition, comparisons of growth orientation and stoichiometry between CBTO and SrBi_2Ta_2O9 were made.

  2. Morphological variations as nonstandard test parameters for the response to pollutant gas concentration: An application to Ruthenium Phthalocyanine sensing films

    International Nuclear Information System (INIS)

    Generosi, A.; Paci, B.; Albertini, V. Rossi; Perfetti, P.; Paoletti, A.M.; Pennesi, G.; Rossi, G.; Caminiti, R.

    2006-01-01

    A systematic time-resolved energy dispersive x-ray reflectometry study was performed in situ on Ruthenium Phthalocyanine thin fims to estimate the morphological detection limits of this material as NO 2 transducer and the influence of the gas concentration on the gas-film interaction mechanisms. The work validates the use of this unconventional method--based on the observation of the morphological parameters change--for evaluating the response of novel sensing materials in alternative to more standard procedures. Indeed, the morphological monitoring is shown to be sensitive to the gas concentration in a range comparable to the usual electroresistive measurements. Moreover, while the latter is only able to give the information on whether the gas is interacting with the sensor, the former is also able to discriminate among interaction processes of a different nature (in the present case the interaction limited to the film surface and the one involving the material bulk)

  3. Heteroepitaxial silicon film growth at 600 oC from an Al-Si eutectic melt

    International Nuclear Information System (INIS)

    Chaudhari, P.; Shim, Heejae; Wacaser, Brent A.; Reuter, Mark C.; Murray, Conal; Reuter, Kathleen B.; Jordan-Sweet, Jean; Ross, Frances M.; Guha, Supratik

    2010-01-01

    A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 o C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 o C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications.

  4. Growth of α-sexithiophene nanostructures on C60 thin film layers

    DEFF Research Database (Denmark)

    Radziwon, Michal Jędrzej; Madsen, Morten; Balzer, Frank

    2014-01-01

    Organic molecular beam grown -sexithiophene (-6T) forms nanostructured thin films on buckminsterfullerene (C60) thin film layers. At substrate temperatures of 300K during growth a rough continuous film is observed, which develop to larger elongated islands and dendritic- as well as needle like ...... fluorescence polarimetry measurements the in-plane orientation of the crystalline sites within the needle like structures is determined. The polarimetry investigations strongly indicate that the needle like structures consist of lying molecules....

  5. Growth techniques used to develop CDS/CDTE thin film solar cells ...

    African Journals Online (AJOL)

    Growth techniques used to develop CDS/CDTE thin film solar cells: a review. ... Techniques such as molecular beam epitaxy (MBE), metal organic chemical vapour deposition (MOCVD) called melt growth or Bridgman are well known as high quality semiconductor growth techniques. One of the limitations of these ...

  6. Growth of graphene films from non-gaseous carbon sources

    Science.gov (United States)

    Tour, James; Sun, Zhengzong; Yan, Zheng; Ruan, Gedeng; Peng, Zhiwei

    2015-08-04

    In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

  7. Growth, morphology, spectral and thermal studies of gel grown diclofenac acid crystals

    Science.gov (United States)

    Ramachandran, E.; Ramukutty, S.

    2014-03-01

    The crystal growth of diclofenac acid in silica gel is the first to be reported in literature. The growth parameters were varied to optimize the suitable growth condition. Single crystal X-ray diffraction method was used for the conformation of the crystal structure. Morphology studies showed that the growth is prominent along the b-axis and the prominent face is {002}. Fourier transform infrared spectral study was performed to identify the functional groups present in the crystal. Thermal stability and decomposition of the material were analyzed using thermo calorimetry in the temperature range 30-500 °C.

  8. Morphology and physiology of the dimorphic fungus Mucor circinelloides (syn. M. racemosus) during anaerobic growth

    DEFF Research Database (Denmark)

    Lübbehüsen, Tina Louise; Nielsen, Jens; Mcintyre, Mhairi

    2003-01-01

    The dimorphic Mucor circinelloides requires an anaerobic atmosphere and the presence of 30% CO2 to grow as a multipolar budding yeast, otherwise hyphal growth predominates. Establishing other means to control the morphology would be a distinct advantage in the development of a fermentation process...... for this organism for the production of heterologous proteins. Thus, conditions suppressing polarised growth while at the same time abolishing the CO2 requirement were investigated in submerged cultivations. It was found that supplementing cultures with mixtures of ergosterol and Tween 80 resulted in yeast...... on supporting yeast growth by influencing the fluidity of the plasma membrane or affecting polarised growth are discussed....

  9. Influence of the morphology and microstructure on the photocatalytic properties of titanium oxide films obtained by sparking anodization in H{sub 3}PO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Souza Sikora, Mariana de; Viana Rosario, Adriane [Laboratorio Interdisciplinar de Eletroquimica e Ceramica (LIEC), DQ, UFSCar, P.O. Box: 676, 13565-905, Sao Carlos (Brazil); Chaves Pereira, Ernesto, E-mail: decp@power.ufscar.b [Laboratorio Interdisciplinar de Eletroquimica e Ceramica (LIEC), DQ, UFSCar, P.O. Box: 676, 13565-905, Sao Carlos (Brazil); Paiva-Santos, Carlos O. [Laboratorio Computacional em Analises Cristalograficas e Cristalinas - LabCACC, Instituto de Quimica, UNESP, 14800-900, Araraquara, SP (Brazil)

    2011-03-30

    Research highlights: {yields} Variation of morphology and microstructure of TiO{sub 2} with applied charge. {yields} Influence of morphology on photoactivity of TiO{sub 2} films prepared by sparking anodization. {yields} Influence of crystallite size on photoactivity of TiO{sub 2} films prepared by sparking anodization. - Abstract: The aim of this paper is to investigate changes in morphology and microstructure of TiO{sub 2} films, prepared by sparking anodization of Ti in a H{sub 3}PO{sub 4} solution, by applying different formation charges. We show that although films obtained by this technique are rarely used in photocatalytic applications, the morphological and microstructural changes during sparking anodization produce TiO{sub 2} films that can be used as photocatalysts. In contrast to qualitative analysis commonly found in the literature, we used quantitative methods of analysis to quantify average pore diameter and pore density from the morphology and structural parameters from X-ray diffraction (XRD) patterns using the Rietveld refinement. The results indicated that changes in both the morphology and crystalline structure have a strong influence on the photoactivity of the films. From this investigation, we concluded that, for films prepared in early stages of anodization, the morphology had the biggest influence on photoactivity, and after applying 72C of charge, crystalline properties dominated the photocatalytic characteristics of the films.

  10. Influence of the morphology and microstructure on the photocatalytic properties of titanium oxide films obtained by sparking anodization in H3PO4

    International Nuclear Information System (INIS)

    Souza Sikora, Mariana de; Viana Rosario, Adriane; Chaves Pereira, Ernesto; Paiva-Santos, Carlos O.

    2011-01-01

    Research highlights: → Variation of morphology and microstructure of TiO 2 with applied charge. → Influence of morphology on photoactivity of TiO 2 films prepared by sparking anodization. → Influence of crystallite size on photoactivity of TiO 2 films prepared by sparking anodization. - Abstract: The aim of this paper is to investigate changes in morphology and microstructure of TiO 2 films, prepared by sparking anodization of Ti in a H 3 PO 4 solution, by applying different formation charges. We show that although films obtained by this technique are rarely used in photocatalytic applications, the morphological and microstructural changes during sparking anodization produce TiO 2 films that can be used as photocatalysts. In contrast to qualitative analysis commonly found in the literature, we used quantitative methods of analysis to quantify average pore diameter and pore density from the morphology and structural parameters from X-ray diffraction (XRD) patterns using the Rietveld refinement. The results indicated that changes in both the morphology and crystalline structure have a strong influence on the photoactivity of the films. From this investigation, we concluded that, for films prepared in early stages of anodization, the morphology had the biggest influence on photoactivity, and after applying 72C of charge, crystalline properties dominated the photocatalytic characteristics of the films.

  11. Controlled Growth and Grafting of High-Density Au Nanoparticles on Zinc Oxide Thin Films by Photo-Deposition.

    Science.gov (United States)

    Cure, Jérémy; Assi, Hala; Cocq, Kévin; Marìn, Lorena; Fajerwerg, Katia; Fau, Pierre; Bêche, Eric; Chabal, Yves J; Estève, Alain; Rossi, Carole

    2018-02-06

    The integration of high-purity nano-objects on substrates remains a great challenge for addressing scaling-up issues in nanotechnology. For instance, grafting gold nanoparticles (NPs) on zinc oxide films, a major step process for catalysis or photovoltaic applications, still remains difficult to master. We report a modified photodeposition (P-D) approach that achieves tight control of the NPs size (7.5 ± 3 nm), shape (spherical), purity, and high areal density (3500 ± 10 NPs/μm 2 ) on ZnO films. This deposition method is also compatible with large ZnO surface areas. Combining electronic microscopy and X-ray photoelectron spectroscopy measurements, we demonstrate that growth occurs primarily in confined spaces (between the grains of the ZnO film), resulting in gold NPs embedded within the ZnO surface grains thus establishing a unique NPs/surface arrangement. This modified P-D process offers a powerful method to control nanoparticle morphology and areal density and to achieve strong Au interaction with the metal oxide substrate. This work also highlights the key role of ZnO surface morphology to control the NPs density and their size distribution. Furthermore, we experimentally demonstrate an increase of the ZnO photocatalytic activity due to high densities of Au NPs, opening applications for the decontamination of water or the photoreduction of water for hydrogen production.

  12. Comprehensive study of growth mechanism and properties of low Zn content Cd{sub 1-x}Zn{sub x}S thin films by chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, Carlos Anibal [Multidisciplinary Research Institute in Science and Technology, Ineergias, University of La Serena (Chile); Sandoval-Paz, Myrna Guadalupe; Saavedra, Renato; De la Carrera, Francisco [Department of Physics, Faculty of Physical and Mathematical Sciences, University of Concepcion (Chile); Trejo-Cruz, Cuauhthemoc [Department of Physics, Faculty of Sciences, University of Biobio, Concepcion (Chile); Aragon, Luis E.; Sirena, Martin [Centro Atomico Bariloche & Instituto Balseiro, CNEA & Univ. Nac. de Cuyo, Bariloche, Rio Negro (Argentina); Delplancke, Marie-Paule [4MAT, Universite Libre de Bruxelles, Brussels (Belgium); Carrasco, Claudia [Department of Materials Engineering, Faculty of Engineering, University of Concepcion (Chile)

    2016-11-15

    Cd{sub 1-x}Zn{sub x}S thin films have been studied extensively as window layers for solar cell applications. However, a mismatch between the Cd{sub 1-x}Zn{sub x}S and copper-indium-gallium-selenide absorber layers increases with Zn film concentration, which reduces the device efficiency. In this work, Cd{sub 1-x}Zn{sub x}S thin films with low Zn concentrations were analyzed. The effect of the addition of different molar Zn concentrations to the reaction mixture on the growth mechanism of Cd{sub 1-x}Zn{sub x}S thin films and the influence of these mechanisms on structural, optical and morphological properties of the films has been studied. Cd{sub 1-x}Zn{sub x}S thin films were synthesized by chemical bath deposition using an ammonia-free alkaline solution. Microstructural analysis by X-ray diffraction showed that all deposited films grew with hexagonal structure and crystallite sizes decreased as the Zn concentration in the film increased. Optical measurements indicated a high optical transmission between 75% and 90% for wavelengths above the absorption edge. Band gap value increased from 2.48 eV to 2.62 eV, and the refractive index values for Cd{sub 1-x}Zn{sub x}S thin films decreased as the Zn increased. These changes in films and properties are related to a modification in growth mechanism of the Cd{sub 1-x}Zn{sub x}S thin films, with the influence of Zn(OH){sub 2} formation being more important as Zn in solution increases. (author)

  13. Epitaxial growth of solution deposited Bi2Sr2CaCu2Ox films

    NARCIS (Netherlands)

    Gobel, OF; Du, [No Value; Hibma, T; von Lampe, [No Value; Steiner, U

    The epitaxial growth of Bi2Sr2CaCu2Ox (Bi2212) high temperature superconducting thin films was studied. The films were solution-deposited from a polymer-containing precursor onto SrTiO3 (001) substrates. Bi2212 formed an epitaxial phase with the c-axis parallel to the substrate normal and an in-lane

  14. Pulsed DC sputtered DLC based nanocomposite films : controlling growth dynamics, microstructure and frictional properties

    NARCIS (Netherlands)

    Shaha, K.P.; Pei, Y.T.; Chen, C.Q.; Hosson, J.Th.M. de

    Surface smoothness of diamond-like carbon based thin films becomes a crucial property for developing nearly frictionless protective coatings. Surface roughness and the dynamic growth behaviour of TiC/a-C nanocomposite films, deposited by non-reactive pulsed DC (p-DC) sputtering of graphite targets,

  15. Influence of thermal annealing on microstructural, morphological, optical properties and surface electronic structure of copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akgul, Funda Aksoy, E-mail: fundaaksoy01@gmail.com [Department of Physics, Nigde University, 51240 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Akgul, Guvenc, E-mail: guvencakgul@gmail.com [Bor Vocational School, Nigde University, 51700 Nigde (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Yildirim, Nurcan [Department of Physics Engineering, Ankara University, 06100 Ankara (Turkey); Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Unalan, Husnu Emrah [Department of Metallurgical and Materials Engineering, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey); Turan, Rasit [Department of Physics, Middle East Technical University, 06800 Ankara (Turkey); Center for Solar Energy Research and Applications, Middle East Technical University, 06800 Ankara (Turkey)

    2014-10-15

    In this study, effect of the post-deposition thermal annealing on copper oxide thin films has been systemically investigated. The copper oxide thin films were chemically deposited on glass substrates by spin-coating. Samples were annealed in air at atmospheric pressure and at different temperatures ranging from 200 to 600°C. The microstructural, morphological, optical properties and surface electronic structure of the thin films have been studied by diagnostic techniques such as X-ray diffraction (XRD), Raman spectroscopy, ultraviolet–visible (UV–VIS) absorption spectroscopy, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of the films was about 520 nm. Crystallinity and grain size was found to improve with annealing temperature. The optical bandgap of the samples was found to be in between 1.93 and 2.08 eV. Cupric oxide (CuO), cuprous oxide (Cu{sub 2}O) and copper hydroxide (Cu(OH){sub 2}) phases were observed on the surface of as-deposited and 600 °C annealed thin films and relative concentrations of these three phases were found to depend on annealing temperature. A complete characterization reported herein allowed us to better understand the surface properties of copper oxide thin films which could then be used as active layers in optoelectronic devices such as solar cells and photodetectors. - Highlights: • Effect of post-deposition annealing on copper oxide thin films was investigated. • Structural, optical, and electronic properties of the thin films were determined. • Oxidation states of copper oxide thin films were confirmed by XPS analysis. • Mixed phases of CuO and Cu{sub 2}O were found to coexist in copper oxide thin films.

  16. Growth and characterization of ultrathin epitaxial MnO film on Ag(001)

    Science.gov (United States)

    Kundu, Asish K.; Menon, Krishnakumar S. R.

    2016-07-01

    We present here a comprehensive growth procedure to obtain a well-ordered MnO(001) ultrathin film on Ag(001) substrate. Depending upon the oxygen partial pressure during the growth, different phases of manganese oxide have been detected by Low Energy Electron Diffraction (LEED) and X-ray Photoelectron Spectroscopic (XPS) studies. A modified growth scheme has been adopted to get well-ordered and stoichiometric MnO(001) ultrathin film. The detailed growth mechanism of epitaxial MnO film on Ag(001) has been studied step by step, using LEED and XPS techniques. Observation of sharp (1 × 1) LEED pattern with a low inelastic background, corresponds to a long-range atomic order with low defect densities indicating the high structural quality of the film. The Mn 2p and Mn 3s core-level spectra confirm the oxidation state as well as the stoichiometry of the grown MnO films. Apart from the growth optimization, the evolution of strain relaxation of the MnO(001) film with film thickness has been explored.

  17. Factors affecting the growth of the Malawian film industry | Magalasi ...

    African Journals Online (AJOL)

    Journal of Development and Communication Studies ... This article attempts to ask some of the most basic questions about the practice of film making in Malawi on who, what, and how films have been created, tracing the history of cinema from the British Colonial practice, through Kamuzu Banda's reign to the present.

  18. Annealing effect on the structural, morphological and electrical properties of TiO2/ZnO bilayer thin films

    Science.gov (United States)

    Khan, M. I.; Imran, S.; Shahnawaz; Saleem, Muhammad; Ur Rehman, Saif

    2018-03-01

    The effect of annealing temperature on the structural, morphological and electrical properties of TiO2/ZnO (TZ) thin films has been observed. Bilayer thin films of TiO2/ZnO are deposited on FTO glass substrate by spray pyrolysis method. After deposition, these films are annealed at 573 K, 723 K and 873 K. XRD shows that TiO2 is present in anatase phase only and ZnO is present in hexagonal phase. No other phases of TiO2 and ZnO are present. Also, there is no evidence of other compounds like Zn-Ti etc. It also shows that the average grain size of TiO2/ZnO films is increased by increasing annealing temperature. AFM (Atomic force microscope) showed that the average roughness of TiO2/ZnO films is decreased at temperature 573-723 K and then increased at 873 K. The calculated average sheet resistivity of thin films annealed at 573 K, 723 K and 873 K is 152.28 × 102, 75.29 × 102 and 63.34 × 102 ohm-m respectively. This decrease in sheet resistivity might be due to the increment of electron concentration with increasing thickness and the temperature of thin films.

  19. Interface Engineering and Morphology Study of Thin Film Organic-Inorganic Halide Perovskite Optoelectronic Devices

    Science.gov (United States)

    Meng, Lei

    Solar energy harvesting through photovoltaic conversion has gained great attention as a sustainable and environmentally friendly solution to meet the rapidly increasing global energy demand. Currently, the high cost of solar-cell technology limits its widespread use. This situation has generated considerable interest in developing alternative solar-cell technologies that reduce cost through the use of less expensive materials and processes. Perovskite solar cells provide a promising low-cost technology for harnessing this energy source. In Chapter two, a moisture-assist method is introduced and studied to facilitate grain growth of solution processed perovskite films. As an approach to achieve high-quality perovskite films, I anneal the precursor film in a humid environment (ambient air) to dramatically increase grain size, carrier mobility, and charge carrier lifetime, thus improving electrical and optical properties and enhancing photovoltaic performance. It is revealed that mild moisture has a positive effect on perovskite film formation, demonstrating perovskite solar cells with 17.1% power conversion efficiency. Later on, in Chapter four, an ultrathin flexible device delivering a PCE of 14.0% is introduced. The device is based on silver-mesh substrates exhibiting superior durability against mechanical bending. Due to their low energy of formation, organic lead iodide perovskites are also susceptible to degradation in moisture and air. The charge transport layer therefore plays a key role in protecting the perovskite photoactive layer from exposure to such environments, thus achieving highly stable perovskite-based photovoltaic cells. Although incorporating organic charge transport layers can provide high efficiencies and reduced hysteresis, concerns remain regarding device stability and the cost of fabrication. In this work, perovskite solar cells that have all solution-processed metal oxide charge transport layers were demonstrated. Stability has been

  20. Effect of extremely low frequency electromagnetic fields on growth rate and morphology of bacteria.

    Science.gov (United States)

    Inhan-Garip, Ayse; Aksu, Burak; Akan, Zafer; Akakin, Dilek; Ozaydin, A Nilufer; San, Tangul

    2011-12-01

    To determine the effect of extremely low frequency (electromagnetic fields (ELF-EMF) on the growth rate of Gram-positive and Gram-negative bacteria and to determine any morphological changes that might have been caused by ELF-EMF. Six bacterial strains, three Gram-negative and three Gram-positive were subjected to 50 Hz, 0.5 mT ELF-EMF for 6 h. To determine growth rate after ELF-EMF application, bacteria exposed to ELF-EMF for 3 h were collected, transferred to fresh medium and cultured without field application for another 4 h. Growth-rate was determined by optical density (OD) measurements made every hour. Morphological changes were determined with Transmission electron microscopy (TEM) for two gram-negative and two gram-positive strains collected after 3 h of field application. A decrease in growth rate with respect to control samples was observed for all strains during ELF-EMF application. The decrease in growth-rate continued when exposed bacteria were cultured without field application. Significant ultrastructural changes were observed in all bacterial strains, which were seen to resemble the alterations caused by cationic peptides. This study shows that ELF-EMF induces a decrease in growth rate and morphological changes for both Gram-negative and Gram-positive bacteria.

  1. Controlling the morphology of side chain liquid crystalline block copolymer thin films through variations in liquid crystalline content.

    Science.gov (United States)

    Verploegen, Eric; Zhang, Tejia; Jung, Yeon Sik; Ross, Caroline; Hammond, Paula T

    2008-10-01

    In this paper, we describe methods for manipulating the morphology of side-chain liquid crystalline block copolymers through variations in the liquid crystalline content. By systematically controlling the covalent attachment of side chain liquid crystals to a block copolymer (BCP) backbone, the morphology of both the liquid crystalline (LC) mesophase and the phase-segregated BCP microstructures can be precisely manipulated. Increases in LC functionalization lead to stronger preferences for the anchoring of the LC mesophase relative to the substrate and the intermaterial dividing surface. By manipulating the strength of these interactions, the arrangement and ordering of the ultrathin film block copolymer nanostructures can be controlled, yielding a range of morphologies that includes perpendicular and parallel cylinders, as well as both perpendicular and parallel lamellae. Additionally, we demonstrate the utilization of selective etching to create a nanoporous liquid crystalline polymer thin film. The unique control over the orientation and order of the self-assembled morphologies with respect to the substrate will allow for the custom design of thin films for specific nanopatterning applications without manipulation of the surface chemistry or the application of external fields.

  2. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  3. Influence of Morphological Disorder on In- and Out-of-Plane Charge Transport in Conjugated Polymer Films

    Science.gov (United States)

    Dong, Ban; Li, Anton; Green, Peter

    We report the unequal impacts of morphological disorder on in- and out-of-plane charge transport in thin films of poly(3-hexylthiophene) (P3HT) fabricated by both conventional spin-casting and the novel technique Matrix-Assisted Pulsed Laser Evaporation (MAPLE). MAPLE produces films with inhomogeneous globular subfeatures with dimensions on the order of 100 nm. Optical absorbance spectroscopy corroborates that MAPLE-deposited films are more energetically disordered, but possesses average conjugation lengths comparable to spin-cast P3HT. Both in- and out-of-plane carrier transport measurements of MAPLE-deposited films show characteristics that reflect a higher degree of energetic disorder and broadened density of states. Whereas in-plane carrier mobilities of MAPLE-deposited thin-film transistors are comparable to spin-cast analogues (8.3 x 10-3 cm2V-1s-1 versus 5.5 x 10-3 cm2V-1s-1) , the out-of-plane mobilities of MAPLE-deposited samples are nearly an order of magnitude lower (4.1 x 10-4 cm2V-1s-1 versus 2.7 x 10-3 cm2V-1s-1) . The unusual ensemble of properties and behaviors arising from the unique morphologies produced by MAPLE provide important perspectives on the extent to which disorder impacts different mechanisms of charge transport in conjugated polymers.

  4. Morphology characterization of phenyl-C61-butyric acid methyl ester films via an electrohydrodynamic spraying route

    International Nuclear Information System (INIS)

    Park, Sung-Eun; Park, Ji-Woon; Hwang, Jungho

    2014-01-01

    In this study, we fabricated a thin film layer of phenyl-C61-butyric acid methyl ester (PCBM) fine particles using electrohydrodynamic (EHD) spray and evaluated the effects of the process parameters on the film morphology. After the PCBM was dissolved in dichloromethane, the solution was sprayed onto a substrate using the stable cone-jet mode of EHD spraying at various flow rates ranging from 5 to 15 μl/min and electric potentials ranging from 3 to 5 kV. The effects of the liquid flow rate, nozzle-plate distance, solute fraction, and electrical conductivity on the spray characteristics were investigated. The sizes of the PCBM particles deposited on the substrate were calculated using a scaling law and a mass balance equation, the results of which were in agreement with those obtained by scanning electron microscopy. A thin film was obtained with the structure of PCBM particles deposited without any void or agglomeration from the EHD spraying technique. The electrical conductivity of the PCBM solution was the dominant parameter in controlling the size of the PCBM particles. As the conductivity was increased to 2.4 × 10 −3 S/m from 4.3 × 10 −9 S/m, the particle size decreased from 6.7 μm to 320 nm. The size distribution measured using a scanning mobility particle sizer also supported the generation of nano-scale PCBM particles. The decrease of the particle size with increasing electrical conductivity may lead to a better morphology of PCBM films. - Highlights: • The phenyl-C61-butyric acid methyl ester thin film was obtained by electrospray. • The morphology of film consisting of microparticles was investigated. • The particle size was controlled by adjusting experimental parameters. • The nanoparticle was obtained by increasing the solution conductivity. • The particle size distribution was studied using a scanning mobility particle sizer

  5. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  6. Growth and thermoelectric properties of FeSb2 films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Sun, Ye; Canulescu, Stela; Sun, Peijie

    2011-01-01

    Thermoelectric FeSb2 films were produced by pulsed laser deposition on silica substrates in a low-pressure Ar environment. The growth conditions for near phase-pure FeSb2 films were confirmed to be optimized at a substrate temperature of 425°C, an Ar pressure of 2 Pa, and deposition time of 3 h...... by ablating specifically prepared compound targets made of Fe and Sb powders in atomic ratio of 1:4. The thermoelectric transport properties of FeSb2 films were investigated. Pulsed laser deposition was demonstrated as a method for production of good-quality FeSb2 films....

  7. Pulsed laser deposition: A viable route for the growth of aluminum antimonide film

    Science.gov (United States)

    Das, S.; Ghosh, B.; Hussain, S.; Bhar, R.; Pal, A. K.

    2015-06-01

    Aluminum antimonide films (AlSb) were successfully deposited on glass substrates by ablating an aluminum antimonide target using pulsed Nd-YAG laser. Films deposited at substrate temperatures 773 K and above showed zinc blende structure. Increase in substrate temperature culminated in grain growth in the films. Photoluminescence studies indicated a strong peak 725 nm ( 1.71 eV) and 803 nm ( 1.55 eV). Films deposited at higher deposition temperatures indicated lower residual strain. Characteristic Raman peaks for AlSb at 151 cm-1 followed by two peaks located at 71 cm-1 and 116 cm-1 were also observed.

  8. Chemical structural analysis of diamondlike carbon films: I. Surface growth model

    Science.gov (United States)

    Takabayashi, Susumu; Ješko, Radek; Shinohara, Masanori; Hayashi, Hiroyuki; Sugimoto, Rintaro; Ogawa, Shuichi; Takakuwa, Yuji

    2018-02-01

    The surface growth mechanisms of diamondlike carbon (DLC) films has been clarified. DLC films were synthesized in atmospheres with a fixed methane-to-argon ratio at different temperatures up to 700 °C by the photoemission-assisted glow discharge of photoemission-assisted plasma-enhanced chemical vapor deposition. The electrical resistivity of the films decreased logarithmically as the synthesis temperature was increased. Conversely, the dielectric constant of the films increased and became divergent at high temperature. However, the very high electrical resistivity of the film synthesized at 150 °C was retained even after post-annealing treatments at temperatures up to 500 °C, and divergence of the dielectric constant was not observed. Such films exhibited excellent thermal stability and retained large amounts of hydrogen, even after post-annealing treatments. These results suggest that numerous hydrogen atoms were incorporated into the DLC films during synthesis at low temperatures. Hydrogen atoms terminate carbon dangling bonds in the films to restrict π-conjugated growth. During synthesis at high temperature, hydrogen was desorbed from the interior of the growing films and π-conjugated conductive films were formed. Moreover, hydrogen radicals were chemisorbed by carbon atoms at the growing DLC surface, leading to removal of carbon atoms from the surface as methane gas. The methane molecules decomposed into hydrocarbons and hydrogen radicals through the attack of electrons above the surface. Hydrogen radicals contributed to the etching reaction cycle of the film; the hydrocarbon radicals were polymerized by reacting with other radicals and the methane source. The polymer radicals remained above the film, preventing the supply of the methane source and disrupting the action of argon ions. At high temperatures, the resultant DLC films were rough and thin.

  9. Root morphology and growth of bare-root seedlings of Oregon white oak

    Science.gov (United States)

    Peter J. Gould; Constance A. Harrington

    2009-01-01

    Root morphology and stem size were evaluated as predictors of height and basal-area growth (measured at groundline) of 1-1 Oregon white oak (Quercus garryana Dougl. ex Hook.) seedlings planted in raised beds with or without an additional irrigation treatment. Seedlings were classified into three root classes based on a visual assessment of the...

  10. The effect of salinity on the growth, morphology and physiology of ...

    African Journals Online (AJOL)

    The salinity of water and soil decreases the growth and yield of agricultural products. Salinity affects many physiological and morphological processes of plant by influencing soil solution osmotic potential and ion absorption and accumulation of minerals. To evaluate the effect of salinity on some physiological and ...

  11. Changes in morphology and growth of the mudskipper (Periophthalmus argentilineatus) associated with coastal pollution

    NARCIS (Netherlands)

    Kruitwagen, G.; Hecht, T.; Pratap, H.B.; Wendelaar Bonga, S.E.

    2006-01-01

    In this paper a comparison is made between the growth and morphology of barred mudskippers (Periophthalmus argentilineatus) from six mangrove forests along the coast of Tanzania. The fish populations from unpolluted sites consisted of different size classes, whereas only small sized fish were

  12. Sagittal synostosis: II. Cranial morphology and growth after the modified pi-plasty

    DEFF Research Database (Denmark)

    Guimaraes-Ferreira, J.; Gewalli, F.; David, L.

    2006-01-01

    The aim of this study was to characterise the postoperative cranial growth and morphology after a modified pi-plasty for sagittal synostosis. The shape of the skull of 82 patients with isolated premature synostosis of the sagittal suture ( SS group) operated on with a modified pi-plasty was studi...

  13. Effect of titanium oxide–polystyrene nanocomposite dielectrics on morphology and thin film transistor performance for organic and polymeric semiconductors

    International Nuclear Information System (INIS)

    Della Pelle, Andrea M.; Maliakal, Ashok; Sidorenko, Alexander; Thayumanavan, S.

    2012-01-01

    Previous studies have shown that organic thin film transistors with pentacene deposited on gate dielectrics composed of a blend of high K titanium oxide–polystyrene core–shell nanocomposite (TiO 2 –PS) with polystyrene (PS) perform with an order of magnitude increase in saturation mobility for TiO 2 –PS (K = 8) as compared to PS devices (K = 2.5). The current study finds that this performance enhancement can be translated to alternative small single crystal organics such as α-sexithiophene (α-6T) (enhancement factor for field effect mobility ranging from 30-100× higher on TiO 2 –PS/PS blended dielectrics as compared to homogenous PS dielectrics). Interestingly however, in the case of semicrystalline polymers such as (poly-3-hexylthiophene) P3HT, this dramatic enhancement is not observed, possibly due to the difference in processing conditions used to fabricate these devices (film transfer as opposed to thermal evaporation). The morphology for α-sexithiophene (α-6T) grown by thermal evaporation on TiO 2 –PS/PS blended dielectrics parallels that observed in pentacene devices. Smaller grain size is observed for films grown on dielectrics with higher TiO 2 –PS content. In the case of poly(3-hexylthiophene) (P3HT) devices, constructed via film transfer, morphological differences exist for the P3HT on different substrates, as discerned by atomic force microscopy studies. However, these devices only exhibit a modest (2×) increase in mobility with increasing TiO 2 –PS content in the films. After annealing of the transferred P3HT thin film transistor (TFT) devices, no appreciable enhancement in mobility is observed across the different blended dielectrics. Overall the results support the hypothesis that nucleation rate is responsible for changes in film morphology and device performance in thermally evaporated small molecule crystalline organic semiconductor TFTs. The increased nucleation rate produces organic polycrystalline films with small grain

  14. Growth and characterization of nanostructured CuO films via CBD approach for oxygen gas sensing

    Science.gov (United States)

    Nurfazliana, M. F.; Sahdan, M. Z.; Saim, H.

    2017-01-01

    Nanostructured copper oxide (CuO) films were grown on portable IDE circuit silicon-based by low-cost chemical bath deposition (CBD) technique at three different deposition times (3 h, 5 h and 7 h). The effect of deposition times on the morphological, structural, optical and sensing properties of the nanostructured films were investigated. From the morphological and structural properties, the nanostructured film deposited at 5 h was found to have homogenous surface of CuO nanowhiskers and high crystallinity with tenorite phase compared to 3 h and 7 h films. Besides, there is no heat treatment required in order to produce CuO nanostructures film with tenorite phase. The sensing response (resistance changes) of as-synthesized films to concentration of oxygen (O2) gas also was compared. Film resistance of CuO nanostructures was studied in an environment of dry air loaded (gas sensor chamber) with 30 % of O2 gas. The results revealed that the deposition time causes significant effect on the sensing performance of nanostructured CuO to O2 gas.

  15. Growth and characterization of MnAu{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, S.F., E-mail: shufan.cheng.ctr@nrl.navy.mil; Bussmann, K.M.

    2017-01-01

    MnAu{sub 2} films ranging from 60 to 200 nm thickness are deposited by co-sputtering from elemental targets. X-ray diffraction confirmed these films to be nearly single phase with tetragonal lattice parameters of a=0.336 nm and c=0.872 nm that compare well to the bulk values of a=0.336 nm and c=0.876 nm. The density of the films is analyzed using x-ray reflectivity to be 14.95 g/cm{sup 3} and within experimental error of previously determined value of 15.00 g/cm{sup 3}. The films grown on c-plane sapphire, (100)MgO and (100)MgF{sub 2} are randomly oriented polycrystalline, while the films grown on a-plane sapphire, (111)MgO and (111)Si/(0001)AlN showed that the (110) plane is parallel to the film plane and there are three sets of domains in equal amount differing by 60° in-plane rotation. Magnetic order is found to become paramagnetic near 360 K which is in close proximity to the bulk value. There are deviations in the slope of hysteresis loops observed at 10 K around 10 kOe that indicate complex magnetic switching. - Highlights: • Single phase MnAu{sub 2} films were prepared with full density. • The lattice parameters are close to its bulk values. • The films on a-Al{sub 2}O{sub 3}, (111) MgO and (0001)AlN have the (110) in the film plane. • There are three sets of domains in equal amount differed by 60° in-plane rotation. • The magnetic ordering occurs near the bulk value of 363 K.

  16. Surface morphology of refractive-index waveguide gratings fabricated in polymer films

    Science.gov (United States)

    Dong, Yi; Song, Yan-fang; Ma, Lei; Gao, Fang-fang

    2016-09-01

    The characteristic modifications are reported on the surface of polymeric waveguide film in the process of volume- grating fabrication. The light from a mode-locked 76 MHz femtosecond laser with pulse duration of 200 fs and wavelength of 800 nm is focused normal to the surface of the sample. The surface morphology modifications are ascribed to a fact that surface swelling occurs during the process. Periodic micro-structure is inscribed with increasing incident power. The laser-induced swelling threshold on the grating, which is higher than that of two-photon initiated photo-polymerization (TPIP) (8 mW), is verified to be about 20 mW. It is feasible to enhance the surface smoothness of integrated optics devices for further encapsulation. The variation of modulation depth is studied for different values of incident power and scan spacing. Ablation accompanied with surface swelling appears when the power is higher. By optimizing the laser carving parameters, highly efficient grating devices can be fabricated.

  17. Electrochemical growth of synthetic melanin thin films by constant potential methods

    Energy Technology Data Exchange (ETDEWEB)

    Kim, In Gyun; Nam, Hye Jin; Ahn, Hyeon Ju [Department of Chemistry, School of Chemical Materials Science, Institute of Basic Sciences, Sungkyunkwan Advanced Institute of NanoTechnology (SAINT), Sungkyunkwan University, Chunchun-dong, Gyunggi-do, Suwon 440-746 (Korea, Republic of); Jung, Duk-Young, E-mail: dyjung@skku.ed [Department of Chemistry, School of Chemical Materials Science, Institute of Basic Sciences, Sungkyunkwan Advanced Institute of NanoTechnology (SAINT), Sungkyunkwan University, Chunchun-dong, Gyunggi-do, Suwon 440-746 (Korea, Republic of)

    2011-02-28

    Polymerized melanin thin films were electrochemically synthesized in a 5,6-dihydroxyindole precursor solution on indium tin oxide (ITO) substrates using the cyclic voltammetry and constant potential methods. Tris(hydroxymethyl)aminomethane (THAM) and phosphate buffer solutions were applied to prepare the films that were well deposited to the ITO substrates. The films that were synthesized in the THAM buffer solution exhibited a faster growth rate and better adhesion to the ITO electrodes than the films in the phosphate buffer. The film thickness linearly increased at the growth rate of 0.8 nm/s as the deposition time and number of cycles increased. Two electrochemical conditions produced similar thicknesses as well as physical properties in each buffer solution. However, the constant potential method demonstrated that this provides the synthetic advantages of faster deposition and less consumption of electric charge compared to the cyclic voltammetry route.

  18. Growth and characterization of α and β-phase tungsten films on various substrates

    International Nuclear Information System (INIS)

    Lee, Jeong-Seop; Cho, Jaehun; You, Chun-Yeol

    2016-01-01

    The growth conditions of tungsten thin films were investigated using various substrates including Si, Si/SiO 2 , GaAs, MgO, and Al 2 O 3 , and recipes were discovered for the optimal growth conditions of thick metastable β-phase tungsten films on Si, GaAs, and Al 2 O 3 substrates, which is an important material in spin orbit torque studies. For the Si/SiO 2 substrate, the crystal phase of the tungsten films was different depending upon the tungsten film thickness, and the transport properties were found to dramatically change with the thickness owing to a change in phase from the α + β phase to the α-phase. It is shown that the crystal phase changes are associated with residual stress in the tungsten films and that the resistivity is closely related to the grain sizes

  19. SnO2 thin-films prepared by a spray-gel pyrolysis: Influence of sol properties on film morphologies

    International Nuclear Information System (INIS)

    Luyo, Clemente; Fabregas, Ismael; Reyes, L.; Solis, Jose L.; Rodriguez, Juan; Estrada, Walter; Candal, Roberto J.

    2007-01-01

    Nanostructured tin oxide films were prepared by depositing different sols using the so-called spray-gel pyrolysis process. SnO 2 suspensions (sols) were obtained from tin (IV) tert-amyloxide (Sn(t-OAm) 4 ) or tin (IV) chloride pentahydrate (SnCl 4 .5H 2 O) precursors, and stabilized with ammonia or tetraethylammonium hydroxide (TEA-OH). Xerogels from the different sols were obtained by solvent evaporation under controlled humidity. The Relative Gelling Volumes (RGV) of these sols strongly depended on the type of precursor. Xerogels obtained from inorganic salts gelled faster, while, as determined by thermal gravimetric analysis, occluding a significant amount of volatile compounds. Infrared spectroscopic analysis was performed on raw and annealed xerogels (300, 500 deg. C, 1 h). Annealing removed water and ammonium or alkyl ammonium chloride, increasing the number of Sn-O-Sn bonds. SnO 2 films were prepared by spraying the sols for 60 min onto glass and alumina substrates at 130 deg. C. The films obtained from all the sols were amorphous or displayed a very small grain size, and crystallized after annealing at 400 deg. C or 500 deg. C in air for 2 h. X-ray diffraction analysis showed the presence of the cassiterite structure and line broadening indicated a polycrystalline material with a grain size in the nanometer range. Results obtained from Scanning Electron Microscopy analysis demonstrated a strong dependence of the film morphology on the RGV of the sols. Films obtained from Sn(t-OAm) 4 showed a highly textured morphology based on fiber-shape bridges, whereas the films obtained from SnCl 4 .5H 2 O had a smoother surface formed by 'O-ring' shaped domains. Lastly, the performance of these films as gas sensor devices was tested. The conductance (sensor) response for ethanol as a target analyte was of the same order of magnitude for the three kinds of films. However, the response of the highly textured films was more stable with shorter response times

  20. Growth, structure and stability of sputter-deposited MoS2 thin films

    Directory of Open Access Journals (Sweden)

    Reinhard Kaindl

    2017-05-01

    Full Text Available Molybdenum disulphide (MoS2 thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC substrates. Samples deposited at room temperature (RT and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films.

  1. Growth and Analysis of Highly Oriented (11n) BCSCO Films for Device Research

    Science.gov (United States)

    Raina, K. K.; Pandey, R. K.

    1995-01-01

    Films of BCSCO superconductor of the type Bi2CaSr2Cu2O(x), have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (greater than 860 C) also encourage to the formation of this phase. XRD measurements show that the films grown on (110) NdGaO3 have a preferred (11n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values, zero resistance (T(sab co)) and critical current density obtained are 87 K and 10(exp 5) A/sq cm respectively.

  2. Transients in the growth of passive films on high level nuclear waste canisters

    International Nuclear Information System (INIS)

    Urquidi-Macdonald, M.; Macdonald, Digby D.

    2003-01-01

    A new rate law for the growth of anodic passive films on metal surfaces that was recently derived from the Point Defect Model (PDM) is used to predict the transients in current density and film thickness on Alloy C-22 over extended periods of time in an environment (saturated brine) that is postulated to exist in high level nuclear waste repositories. The model recognizes both the growth of the barrier oxide layer into the metal via the generation of oxygen vacancies at the metal/film interface and the dissolution of the barrier layer at the film/solution interface, as well as the current carried by cation interstitials within the Cr 2 O 3 barrier layer. The derived rate law accounts for the existence of a steady state in film thickness as well as for the transients in thickness and film growth current as the potential is stepped in the positive or negative direction from an initial steady state. The predicted transients in film thickness and growth current density for Alloy C-22 in the prototypical HLNW (High Level Nuclear Waste) environment employed demonstrate that the kinetics of dissolution of the barrier oxide layer at the barrier layer/solution interface control the rate of passive film thinning when the corrosion potential is stepped in the negative direction, whereas the kinetics of oxygen vacancy generation at the metal/film interface control the rate of film thickening when the potential is displaced in the positive direction. While the transients are predicted to persist for considerable time, the times are short compared with the design life of the repository and we conclude that the accumulated damage due to general corrosion is readily predicted by using quasi steady-state models. (authors)

  3. Optimizing growth conditions for electroless deposition of Au films ...

    Indian Academy of Sciences (India)

    Unknown

    aurate plating solutions has been carried out at varying concentrations, deposition durations as well as bath temperatures, and the result- ing films were characterized by X-ray diffraction, optical profilometry, atomic force microscopy and ...

  4. Preventing bacterial growth on implanted device with an interfacial metallic film and penetrating X-rays.

    Science.gov (United States)

    An, Jincui; Sun, An; Qiao, Yong; Zhang, Peipei; Su, Ming

    2015-02-01

    Device-related infections have been a big problem for a long time. This paper describes a new method to inhibit bacterial growth on implanted device with tissue-penetrating X-ray radiation, where a thin metallic film deposited on the device is used as a radio-sensitizing film for bacterial inhibition. At a given dose of X-ray, the bacterial viability decreases as the thickness of metal film (bismuth) increases. The bacterial viability decreases with X-ray dose increases. At X-ray dose of 2.5 Gy, 98% of bacteria on 10 nm thick bismuth film are killed; while it is only 25% of bacteria are killed on the bare petri dish. The same dose of X-ray kills 8% fibroblast cells that are within a short distance from bismuth film (4 mm). These results suggest that penetrating X-rays can kill bacteria on bismuth thin film deposited on surface of implant device efficiently.

  5. The effects of some polyamine biosynthetic inhibitors on growth and morphology of phytopathogenic fungi

    Science.gov (United States)

    Rajam, M. V.; Galston, A. W.

    1985-01-01

    We have studied the effects of two polyamine biosynthetic inhibitors, alpha-difluoromethylornithine (DFMO) and alpha-difluoromethylarginine (DFMA), and of polyamines (PAs), alone and in combination, on mycelial growth and morphology of four phytopathogenic fungi: Botrytis sp, B. cinerea, Rhizoctonia solani and Monilinia fructicola. The inhibitors were added to a Czapek agar medium to get final concentrations of 0.1, 0.5 and 1.0 mM. DFMO and DFMA, suicide inhibitors of ornithine decarboxylase (ODC) and arginine decarboxylase (ADC) respectively, inhibited mycelial growth strongly; the effect was generally more pronounced with DFMA than with DFMO, but each fungus had its own response pattern. The addition of the PAs putrescine (Put) and spermidine (Spd) to the culture medium resulted in a promotion of growth. In Botrytis sp and Monilinia fructicola exposed to inhibitors plus PAs, mycelial growth was actually increased above control values. Mycelial morphology was altered and cell size dramatically reduced in plates containing inhibitors alone, whereas with PAs alone, or in combination with inhibitors, morphology was normal, but cell length and diameters increased considerably. These results suggest that PAs are essential for growth in fungal mycelia. The inhibition caused by DFMA may be due to its arginase-mediated conversion to DFMO.

  6. Growth in phonological, orthographic, and morphological awareness in grades 1 to 6.

    Science.gov (United States)

    Berninger, Virginia W; Abbott, Robert D; Nagy, William; Carlisle, Joanne

    2010-04-01

    Growth curve analyses showed that (a) word-level phonological and orthographic awareness show greatest growth during the primary grades but some additional growth thereafter, and (b) three kinds of morphological awareness show greatest growth in the first three or four grades but one-derivation-continues to show substantial growth after fourth grade. Implications of the findings for the role of three kinds of linguistic awareness-phonological, orthographic, and morphological-in learning to read and spell words are discussed. A case is made that phonological awareness, while necessary, is not sufficient for learning to read English-all three kinds of linguistic awareness that are growing during the primary grades need to be coordinated and applied to literacy learning. This finding and a review of the research on linguistic awareness support the conclusion that the recommendations of the National Reading Panel need to be amended so that the research evidence supporting the importance of both orthographic and morphological awareness, and not only phonological awareness, is acknowledged. Moreover, evidence-based strategies for teaching each of these kinds of linguistic awareness and their interrelationships need to be disseminated to educational practitioners.

  7. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chen, W. Z. [Quanzhou Normal University, Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics & Information Engineering (China); Wang, B. B. [Chongqing University of Technology, College of Chemical Engineering (China); Qu, Y. Z.; Huang, X. [Xiamen University, College of Energy, Xiang’an Campus (China); Ostrikov, K. [Queensland University of Technology, School of Chemistry, Physics and Mechanical Engineering (Australia); Levchenko, I.; Xu, S. [Nanyang Technological University, Plasma Sources and Applications Centre, National Institute of Education (Singapore); Cheng, Q. J., E-mail: qijin.cheng@xmu.edu.cn [Xiamen University, College of Energy, Xiang’an Campus (China)

    2017-03-15

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O{sub 2}-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  8. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    International Nuclear Information System (INIS)

    Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

    2017-01-01

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O 2 -Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  9. Evaluation of the Growth Dynamics and Morphological Characteristics of Genetic Sources of Silybum marianum (L. Gaertn

    Directory of Open Access Journals (Sweden)

    Pavla Koláčková

    2015-01-01

    Full Text Available The aim of this work was to evaluate the growth dynamics and selected morphological characteristics of genetic sources of milk thistle (Silybum marianum L. Gaertn. for the further development of the minimal set of descriptors. Milk thistle is grown in the Czech Republic for its achenes; however, the quality of achenes can be reduced by many factors, by the occurrence of fungal pathogens mainly. The growth dynamics and morphological characteristics of milk thistle during the vegetation period in the years 2010–2013 at two localities were evaluated. The cluster analysis of the data showed the similarity for some of the accessions and confirmed the dependence of the data value to the climatic conditions. Source from Serbia, Slovakia, Romanian variety ’De Prahova’, German accessions SIL 2 and SIL 8, Hungarian accesion RCAT 040360 DDR and Czech variety ’Silyb’ seem to be promising genetic sources from the viewpoint of growth and development in the Czech Republic.

  10. Growth mechanisms and morphology of NaCl monocrystals obtained by the Czochralski method

    International Nuclear Information System (INIS)

    Goujon, Gilles G.

    1969-01-01

    In its first part, this research thesis describes the various aspects of the theory of crystal growth in melt bath by drawing with growth being limited either by heat transfer phenomena or by mechanisms of molecule transport through the interface. The second part addresses the quality of the obtained monocrystals (dislocations, dislocation density) while discussing the impact of external growth parameters (germ choice and orientation, drawing speed, rotating speed, atmosphere, impurities, crystal diameter). Then, the author presents an experimental study (equipment, experimental conditions) and discusses its results (influence of temperature on crystal geometry, morphology of side surface, study of crystal plane faces by chemical attack). The next part proposes an interpretation of the morphology change of a crystal drawn by the Czochralski method

  11. Co-depositing Sn controls the growth of Al films as surfactant

    International Nuclear Information System (INIS)

    Barna, P. B.; Kovacs, A.; Misjak, F.; Eisenmenger-Sittner, C.; Bangert, H.; Tomastik, C.

    2002-01-01

    The present study investigates the influence of co-deposited Sn on the atomic processes involved in the structure evolution of vapour-deposited Al films. The films were prepared in HV by thermal evaporation from W sources at 1600 C substrate temperature either on Si wafers covered by a thermally grown oxide or on air cleaved mica. By applying the half-shadow technique, pure and Sn-doped Al films could be deposited simultaneously. The samples were investigated by AFM, scanning AES, X-TEM as well as by X-ray diffraction methods. The grain growth of Al is promoted by Sn in all stages of the film formation. Scanning AES measurements prove the existence of a wetting Sn layer both on the surface of Al islands and on the surface of the continuos Al layer. Excess Sn forms islands on the growth surface. The surface of pure Al layers exhibits grain boundary grooves and bunches of growth steps around terraces, while that of the Sn doped layers is more rounded. The substrate-film interface was covered by a thin Sn layer. AES measurements also prove the presence of Sn on the growth surface of Al films even after termination of Sn addition. Results of these experiments indicate that during co-deposition of Al and Sn the impinging Al atoms penetrate the wetting layer and are incorporated into the already existing Al crystals. A model has been developed for describing the growth of Al crystals in the presence Sn. (Authors)

  12. Influences of organic cation and hydrochloric acid additive on the morphology and photoluminescence of HC(NH2)2PbBr3 films

    Science.gov (United States)

    Yan, Jun; Chen, Yunlin; Wang, Ji; Zhang, Ao; Zhang, Bing

    2017-11-01

    The hydrohalic acid additives have been used in perovskite thin films to improve the film morphology and optical properties. However, our study demonstrated that the hydrochloric acid (HCl) additive greatly improved the surface coverage but lowered the photoluminescence (PL) emission intensities of HC(NH2)2PbBr3 (HC(NH2)2 = FA) films. The effects of organic cation and hydrochloric acid additive on the morphology and photoluminescence of FAPbBr3 films were investigated. We found that FAPbBr3 films prepared with HCl additive in low FABr concentration environment displayed good film quality but weak PL emission intensity. The optical properties of FAPbBr3 films have close relationship with FABr concentration. The optical absorption edge of FAPbBr3 showed a blue shift with increasing the FABr concentration. The strong PL emission intensities of FAPbBr3 can be obtained from the solutions with high FABr concentration.

  13. Evolution effects of the copper surface morphology on the nucleation density and growth of graphene domains at different growth pressures

    Science.gov (United States)

    Hedayat, Seyed Mahdi; Karimi-Sabet, Javad; Shariaty-Niassar, Mojtaba

    2017-03-01

    In this work, we study the influence of the surface morphology of the catalytic copper substrate on the nucleation density and the growth rate of graphene domains at low and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) processes. In order to obtain a wide range of initial surface morphology, precisely controlled electropolishing methods were developed to manipulate the roughntreess value of the as-received Cu substrate (RMS = 30 nm) to ultra-rough (RMS = 130 nm) and ultra-smooth (RMS = 2 nm) surfaces. The nucleation and growth of graphene domains show obviously different trends at LPCVD and APCVD conditions. In contrast to APCVD condition, the nucleation density of graphene domains is almost equal in substrates with different initial roughness values at LPCVD condition. We show that this is due to the evolution of the surface morphology of the Cu substrate during the graphene growth steps. By stopping the surface sublimation of copper substrate in a confined space saturated with Cu atoms, the evolution of the Cu surface was impeded. This results in the reduction of the nucleation density of graphene domains up to 24 times in the pre-smoothed Cu substrates at LPCVD condition.

  14. Water-induced morphology changes in an ultrathin silver film studied by ultraviolet-visible, surface-enhanced Raman scattering spectroscopy and atomic force microscopy

    International Nuclear Information System (INIS)

    Li Xiaoling; Xu Weiqing; Jia Huiying; Wang Xu; Zhao Bing; Li Bofu; Ozaki, Yukihiro

    2005-01-01

    Water-induced changes in the morphology and optical properties of an ultrathin Ag film (3 nm thickness) have been studied by use of ultraviolet-visible (UV-Vis) spectroscopy, atomic force microscopy (AFM) and surface-enhanced Raman scattering (SERS) spectroscopy. A confocal micrograph shows that infinite regular Ag rings with almost uniform size (4 μm) emerge on the film surface after the ultrathin Ag film was immersed into water. The AFM measurement further confirms that the Ag rings consist of some metal holes with pillared edges. The UV-Vis spectrum shows that an absorption band at 486 nm of the Ag film after the immersion in water (I-Ag film) blue shifts by 66 nm with a significant decrease in absorbance, which is attributed to the macroscopic loss of some Ag atoms and the change in the morphology of the Ag film. The polarized UV-Vis spectra show that a band at 421 nm due to the normal component of the plasmon oscillation blue shifts after immersing the ultrathin Ag film into water. This band is found to be strongly angle-dependent for p-polarized light, indicating that the optical properties of the ultrathin Ag film are changed. The I-Ag film is SERS-active, and the SERS enhancement depends on different active sites on the film surface. Furthermore, it seems that the orientation of an adsorbate is related to the morphology of the I-Ag film

  15. Investigating the crystal growth behavior of biodegradable polymer blend thin films using in situ atomic force microscopy

    CSIR Research Space (South Africa)

    Malwela, T

    2014-01-01

    Full Text Available This article reports the crystal growth behavior of biodegradable polylactide (PLA)/poly[(butylene succinate)-co-adipate] (PBSA) blend thin films using atomic force microscopy (AFM). Currently, polymer thin films have received increased research...

  16. Locomotor activity influences muscle architecture and bone growth but not muscle attachment site morphology

    Science.gov (United States)

    Rabey, Karyne N.; Green, David J.; Taylor, Andrea B.; Begun, David R.; Richmond, Brian G.; McFarlin, Shannon C.

    2014-01-01

    The ability to make behavioural inferences from skeletal remains is critical to understanding the lifestyles and activities of past human populations and extinct animals. Muscle attachment site (enthesis) morphology has long been assumed to reflect muscle strength and activity during life, but little experimental evidence exists to directly link activity patterns with muscle development and the morphology of their attachments to the skeleton. We used a mouse model to experimentally test how the level and type of activity influences forelimb muscle architecture of spinodeltoideus, acromiodeltoideus, and superficial pectoralis, bone growth rate and gross morphology of their insertion sites. Over an 11-week period, we collected data on activity levels in one control group and two experimental activity groups (running, climbing) of female wild-type mice. Our results show that both activity type and level increased bone growth rates influenced muscle architecture, including differences in potential muscular excursion (fibre length) and potential force production (physiological cross-sectional area). However, despite significant influences on muscle architecture and bone development, activity had no observable effect on enthesis morphology. These results suggest that the gross morphology of entheses is less reliable than internal bone structure for making inferences about an individual’s past behaviour. PMID:25467113

  17. Predicting growth in English and French vocabulary: The facilitating effects of morphological and cognate awareness.

    Science.gov (United States)

    D'Angelo, Nadia; Hipfner-Boucher, Kathleen; Chen, Xi

    2017-07-01

    The present study investigated the contribution of morphological and cognate awareness to the development of English and French vocabulary knowledge among young minority and majority language children who were enrolled in a French immersion program. Participating children (n = 75) were assessed in English and French on measures of morphological awareness, cognate awareness, and vocabulary knowledge from Grades 1 to 3. Hierarchical linear modeling was used to investigate linear trends in English and French vocabulary growth for minority and majority language children and to identify metalinguistic contributions to Grade 1 and Grade 3 English and French vocabulary performance and rate of growth. Results demonstrated a similar pattern of prediction for both groups of children. English and French morphological awareness and French-English cognate awareness significantly predicted concurrent and longitudinal vocabulary development after controlling for nonverbal reasoning, phonological awareness, and word identification. The contributions of morphological awareness to English vocabulary and cognate awareness to French vocabulary strengthened between Grades 1 and 2. These findings highlight the emerging importance of morphological and cognate awareness in children's vocabulary development and suggest that these metalinguistic factors can serve to broaden the vocabulary repertoire of children who enter school with limited language proficiency. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

  18. Growth and characterization of GaN thin film on Si substrate by thermionic vacuum arc (TVA)

    Science.gov (United States)

    Kundakçı, Mutlu; Mantarcı, Asim; Erdoğan, Erman

    2017-01-01

    Gallium nitride (GaN) is an attractive material with a wide-direct band gap (3.4 eV) and is one of the significant III-nitride materials, with many advantageous device applications such as high electron mobility transistors, lasers, sensors, LEDs, detectors, and solar cells, and has found applications in optoelectronic devices. GaN could also be useful for industrial research in the future. Chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputter, and pulsed laser deposition (PLD) are some of the methods used to fabricate GaN thin film. In this research, a GaN thin film grown on a silicon substrate using the thermionic vacuum arc (TVA) technique has been extensively studied. Fast deposition, short production time, homogeneity, and uniform nanostructure with low roughness can be seen as some of the merits of this method. The growth of the GaN was conducted at an operating pressure of 1× {{10}-6} \\text{Torr} , a plasma current 0.6 \\text{A} and for a very short period of time of 40 s. For the characterization process, scanning electron microscopy (SEM) was conducted to determine the structure and surface morphology of the material. Energy dispersive x-ray spectroscopy (EDX) was used to comprehend the elemental analysis characterization of the film. X-ray diffraction (XRD) was used to analyze the structure of the film. Raman measurements were taken to investigate the phonon modes of the material. The morphological properties of the material were analyzed in detail by atomic force microscopy (AFM).

  19. Morphology evolution in spinel manganite films deposited from an aqueous solution

    International Nuclear Information System (INIS)

    Ko, Song Won; Li, Jing; Trolier-McKinstry, Susan

    2012-01-01

    Spinel manganite films were deposited by the spin spray technique at low deposition temperatures ( 1000, agglomeration of small particles was dominant, which suggests that homogeneous nucleation is dominant during deposition. Heterogeneous nucleation was critical to obtain dense films. - Highlights: ► Film microstructure depends on supersaturation. ► Heterogeneous nucleation induces dense and continuous films. ► The spin spray technique enables use of a variety of substrates.

  20. Growth and characterization of Hg1–xCdxTe epitaxial films by ...

    Indian Academy of Sciences (India)

    Unknown

    surface morphology by optical microscope and SEM. The composition variation along the thickness was measured by EDAX attachment (ISIS 200 EDS System) with SEM. FTIR transmission measurements were done on BIO RAD. (FTS-40) for the composition as well as thickness measure- ment of the films. The crystalline ...

  1. Biological and morphological aspects of the growth of equine abortion virus.

    Science.gov (United States)

    Darlington, R W; James, C

    1966-07-01

    Darlington, R. W. (St. Jude Children's Research Hospital, Memphis, Tenn.), and C. James. Biological and morphological aspects of the growth of equine abortion virus. J. Bacteriol. 92:250-257. 1966.-The growth of equine abortion virus (EAV) was studied by bioassay and electron microscopy in L-cell monolayer and suspension cultures, and in HeLa and BHK 21/13 cell monolayers. Results of virus assay (plaque-forming units) indicated that production of cell-associated virus (CAV) began at 6 to 9 hr after infection in all of the cell strains used. Virus release occurred 1 to 2 hr later. By 15 to 20 hr after infection, the amount of released virus (RV) equaled or surpassed that of CAV in all cells other than the HeLa cells, where the amount of RV did not equal CAV until 48 hr after infection. Electron microscopy of infected cells revealed no differences in the morphology of virus development in any of the cells used. Developing virus particles were first detected in cell nuclei at 9 hr after infection. At 12 hr, virus particles could be seen budding from the inner nuclear envelope. Budding into cytoplasmic vacuoles was not seen. Budding virus, virus in cytoplasmic vacuoles, and extracellular virus were all approximately 145 mmu in diameter, and were indistinguishable morphologically. These results indicated that EAV is quite similar to herpes simplex virus with respect to growth and morphology, and that the inner nuclear membrane is the principal site of virus envelopment.

  2. Compost and vermicompost as nursery pot components: effects on tomato plant growth and morphology

    Energy Technology Data Exchange (ETDEWEB)

    Lazcano, C.; Arnold, J.; Tato, A.; Zaller, J. G.; Dominguez, J.

    2009-07-01

    Abstract Post transplant success after nursery stage is strongly influenced by plant morphology. Cultural practices strongly shape plant morphology, and substrate choice is one of the most determining factors. Peat is the most often used amendment in commercial potting substrates, involving the exploitation of non-renewable resources and the degradation of highly valuable peatland ecosystems and therefore alternative substrates are required. Here the feasibility of replacing peat by compost or vermicompost for the production of tomato plants in nurseries was investigated through the study of the effect of increasing proportions of these substrates (0%, 10%, 20%, 50%, 75% and 100%) in target plant growth and morphological features, indicators of adequate post-transplant growth and yield. Compost and vermicompost showed to be adequate substrates for tomato plant growth. Total replacement of peat by vermicompost was possible while doses of compost higher than 50% caused plant mortality. Low doses of compost (10 and 20%) and high doses of vermicompost produced significant increases in aerial and root biomass of the tomato plants. In addition these treatments improved significantly plant morphology (higher number of leaves and leaf area, and increased root volume and branching). The use of compost and vermicompost constitute an attractive alternative to the use of peat in plant nurseries due to the environmental benefits involved but also due to the observed improvement in plant quality. Additional key words: peat moss, plant nursery, soil-less substrate, Solanum lycopersicum L. (Author) 37 refs.

  3. Structural and morphological modifications of the Co-thin films caused by magnetic field and pH variation

    International Nuclear Information System (INIS)

    Franczak, Agnieszka; Levesque, Alexandra; Bohr, Frederic; Douglade, Jacques; Chopart, Jean-Paul

    2012-01-01

    Highlights: ► Co electrodeposits were obtained at high electrolyte temperature under applied magnetic field. ► The temperature is commonly used in the industrial process. ► The effects of magnetic field up to 1 T and pH on structure and morphology were investigated. ► The high process temperature enhances HER which is diminishing by the magnetic field application. - Abstract: Cobalt films were deposited by use of the electrochemical process from a cobalt (II) sulfate solution on a titanium electrode and characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The experiments at electrolyte temperature of 50 °C were performed which is commonly used in the industrial process. The effects of pH and low uniform magnetic field up to 1 T on structure and morphology changes were investigated. The detected phase composition indicates the presence of both phases: hexagonal centered packed and face centered cubic independent on the pH value and the applied magnetic field amplitude. Calculation of the orientation index of Co phase shows the preferential orientation in the films obtained at higher pH. SEM micro-imagines have shown the nucleus shape transition from coarse-grained to needle-shaped dependent on the application of B-field as well as on the pH variation in the case of higher pH level. Co-films obtained from the electrolyte of low pH were characterized by the fine-grained morphology which was not modified by the influence of magnetic field. AFM images proved the effect on roughness of the Co-films which is closely related with the obtained morphology.

  4. XPS analysis and structural and morphological characterization of Cu{sub 2}ZnSnS{sub 4} thin films grown by sequential evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gordillo, G. [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Calderón, C., E-mail: clcalderont@unal.edu.co [Departamento de Física, Universidad Nacional de Colombia, Bogotá (Colombia); Bartolo-Pérez, P. [Departamento de Física Aplicada, CINVESTAV-IPN, Mérida, Yuc. (Mexico)

    2014-06-01

    This work describes a procedure to grow single phase Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with tetragonal-kesterite type structure, through sequential evaporation of the elemental metallic precursors under sulphur vapor supplied from an effusion cell. X-ray diffraction analysis (XRD) is mostly used for phase identification but cannot clearly distinguish the formation of secondary phases such as Cu{sub 2}SnS{sub 3} (CTS) because both compounds have the same diffraction pattern; therefore the use of a complementary technique is needed. Raman scattering analysis was used to distinguish these phases. The influence of the preparation conditions on the morphology and phases present in CZTS thin films were investigated through measurements of scanning electron microscopy (SEM) and XRD, respectively. From transmittance measurements, the energy band gap of the CZTS films was estimated to be around 1.45 eV. The limitation of XRD to identify some of the remaining phases after the growth process are investigated and the results of Raman analysis on the phases formed in samples grown by this method are presented. Further, the influence of the preparation conditions on the homogeneity of the chemical composition in the volume was studied by X-ray photoelectron spectroscopy (XPS) analysis.

  5. Effect of moisture and chitosan layered silicate on morphology and properties of chitosan/layered silicates films

    International Nuclear Information System (INIS)

    Silva, J.R.M.B. da; Santos, B.F.F. dos; Leite, I.F.

    2014-01-01

    Thin chitosan films have been for some time an object of practical assessments. However, to obtain biopolymers capable of competing with common polymers a significant improvement in their properties is required. Currently, the technology of obtaining polymer/layered silicates nanocomposites has proven to be a good alternative. This work aims to evaluate the effect of chitosan content (CS) and layered silicates (AN) on the morphology and properties of chitosan/ layered silicate films. CS/AN bionanocomposites were prepared by the intercalation by solution in the proportion 1:1 and 5:1. Then were characterized by infrared spectroscopy (FTIR), diffraction (XRD) and X-ray thermogravimetry (TG). It is expected from the acquisition of films, based on different levels of chitosan and layered silicates, choose the best composition to serve as a matrix for packaging drugs and thus be used for future research. (author)

  6. Influence of Annealing on the Surface Morphologies and Elemental Compositions of Nanocrystalline Cu2SnSe3 Thin Films

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus

    2011-01-01

    Ternary compound of semiconductor nano crystals Copper Tin Selenide, Cu 2 SnSe 3 , thin films have been prepared by vacuum thermal evaporation technique on well-cleaned glass substrate and annealed in purified nitrogen atmosphere from room temperature to 500 degree Celsius for different annealing temperature. The annealing effects on surface morphologies and elemental compositions of these films have been investigated using Scanning Electron Microscope (SEM) and Energy Dispersive X-ray (EDX). EDX studies shows increasing the annealing temperature resulted in drastic loss of Cu content. It is observed that elemental compositions of the Cu 2 SnSe 3 thin films were close to the ideal stoichiometric value 2:1:3. (author)

  7. Protein kinase A is involved in the control of morphology and branching during aerobic growth of Mucor circinelloides

    DEFF Research Database (Denmark)

    Lübbehüsen, Tina Louise; Polo, V.G.; Rossi, S.

    2004-01-01

    and colony morphology suggested a role for PKAR in the control of morphology and branching. Here strain KFA121, which overexpresses the M. circinelloides pkaR gene, was used to quantify growth and branching under different aerobic growth conditions in a flow-through cell by computerized image analysis...

  8. Carbon Nanofibers Grown on Large Woven Cloths: Morphology and Properties of Growth

    Directory of Open Access Journals (Sweden)

    Vitaly Koissin

    2016-07-01

    Full Text Available The morphology and chemical composition of carbon nanofibers in situ grown on a large carbon-fiber woven fabric are studied using SEM measurements, X-ray Diffraction, X-ray Flourescence, and X-ray Photoelectron Spectroscopy. Results show that nanofibers can have a density and a morphology potentially advantageous for application in polymer-matrix composites. The fiber surface functional groups significantly change after the growth and this also potentially provides a better interfacial adhesion. These advantages can be controlled, e.g., by the catalyst loading and the type of solvent used for its deposition.

  9. KMCThinFilm: A C++ Framework for the Rapid Development of Lattice Kinetic Monte Carlo (kMC) Simulations of Thin Film Growth

    Science.gov (United States)

    2015-09-01

    196–201. 44. Kratzer P. Monte Carlo and kinetic Monte Carlo methods–a tutorial. In: Grotendorst J, Attig N, Blügel S, Marx D, editors. Multiscale...Monte Carlo (kMC) Simulations of Thin Film Growth by James J Ramsey Approved for public release; distribution is...Research Laboratory KMCThinFilm: A C++ Framework for the Rapid Development of Lattice Kinetic Monte Carlo (kMC) Simulations of Thin Film Growth by

  10. Linking the operating parameters of chemical vapor deposition reactors with film conformality and surface nano-morphology.

    Science.gov (United States)

    Cheimarios, Nikolaos; Garnelis, Sokratis; Kokkoris, George; Boudouvis, Andreas G

    2011-09-01

    A multiscale modeling framework is used to couple the co-existing scales, i.e., macro-, micro- and nano-scale, in chemical vapor deposition (CVD) processes. The framework consists of a reactor scale model (RSM) for the description of the transport phenomena in the bulk phase (macro-scale) of a CVD reactor and two models for the micro- and nano-scale: (a) A feature scale model (FSM) describing the deposition of a film inside features on a predefined micro-topography on the wafer and (b) a nano-morphology model (NMM) describing the surface morphology evolution during thin film deposition on an initially flat surface. The FSM is deterministic and consists of three sub-models: A ballistic model for the species' transport inside features, a surface chemistry model, and a profile evolution algorithm based on the level set method. The NMM is stochastic and is based on the kinetic Monte Carlo method. The coupling of RSM with FSM is performed through a correction of the species consumption on the wafer. The linking of RSM with NMM is performed through "feeding" of the deposition rate calculated by RSM to the NMM. The case study is CVD of Silicon (Si) from Silane. The effect of the reactor's operating parameters on the Si film conformality inside trenches is investigated by the coupling of RSM with FSM. The formation of dimmers on an initially flat Si (001) surface as well as the periodic change of the surface nano-morphology is predicted.

  11. The role of seeding in the morphology and wettability of ZnO nanorods films on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez, Juan [Facultad de Ciencias, Universidad Nacional de Ingeniería, P.O. Box 31-139, Lima 31, Perú (Peru); Onna, Diego [DQIAQF-INQUIMAE, FCEyN-Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, 1428 Buenos Aires (Argentina); Sánchez, Luis [Facultad de Ciencias, Universidad Nacional de Ingeniería, P.O. Box 31-139, Lima 31, Perú (Peru); Marchi, M. Claudia [DQIAQF-INQUIMAE, FCEyN-Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, 1428 Buenos Aires (Argentina); Centro de Microscopias Avanzadas, FCEyN-Universidad ed Buenos Aires, Ciudad Universitaria, Pab. I, 1428 Buenos Aires (Argentina); Candal, Roberto, E-mail: rjcandal@gmail.com [DQIAQF-INQUIMAE, FCEyN-Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, 1428 Buenos Aires (Argentina); ECyT, 3iA, Universidad Nacional de San Martín, Martín de Irigoyen No 3100 (1650), San Martín, Pcia de Buenos Aires (Argentina); Ponce, Silvia [Universidad de Lima, Av. Javier Prado Este s/n, Monterrico, Lima 33, Perú (Peru); Bilmes, Sara A. [DQIAQF-INQUIMAE, FCEyN-Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, 1428 Buenos Aires (Argentina)

    2013-08-15

    Spray pyrolysis (SP) and spray-gel (SG) techniques were used to deposit ZnO seeds on Fluor doped tin oxide glasses (FTO), heated at 350 °C or 130 °C, and PET heated at 90 °C. The effect of seeding on the morphology and wettability of ZnO nanorods (NRs) films grown by wet chemical methods was analyzed. The morphology and wettability of ZnO NRs films depend on the seeding process. SP seeds formed from zinc acetate dissolved in water ethanol mixtures yield vertically aligned ZnO NRs, whose diameters and dispersion size are determined by the ethanol/water ratio in the precursor solution. SG seeds formed from a methanol ZnO sol produce a ring patterned distribution on the FTO substrate. The drying of ZnO sol drops impinging on the substrate produces high density of seeds along a ring yielding textured films with NRs vertically oriented on the rings and multi-oriented outside them. This effect was not observed when ZnO NRs grown onto the ZnO/PET substrate, however rod diameter is related with the density of seeds. This way to control the density and diameter of NRs deposited onto a substrate modify the wettability and opens new possibilities for the design of tailored nanomaterials for photochemical applications. Both type of NRs films showed a strong luminescence emission in the UV and in the blue, associated with surface and intrinsic defects.

  12. The role of seeding in the morphology and wettability of ZnO nanorods films on different substrates

    International Nuclear Information System (INIS)

    Rodríguez, Juan; Onna, Diego; Sánchez, Luis; Marchi, M. Claudia; Candal, Roberto; Ponce, Silvia; Bilmes, Sara A.

    2013-01-01

    Spray pyrolysis (SP) and spray-gel (SG) techniques were used to deposit ZnO seeds on Fluor doped tin oxide glasses (FTO), heated at 350 °C or 130 °C, and PET heated at 90 °C. The effect of seeding on the morphology and wettability of ZnO nanorods (NRs) films grown by wet chemical methods was analyzed. The morphology and wettability of ZnO NRs films depend on the seeding process. SP seeds formed from zinc acetate dissolved in water ethanol mixtures yield vertically aligned ZnO NRs, whose diameters and dispersion size are determined by the ethanol/water ratio in the precursor solution. SG seeds formed from a methanol ZnO sol produce a ring patterned distribution on the FTO substrate. The drying of ZnO sol drops impinging on the substrate produces high density of seeds along a ring yielding textured films with NRs vertically oriented on the rings and multi-oriented outside them. This effect was not observed when ZnO NRs grown onto the ZnO/PET substrate, however rod diameter is related with the density of seeds. This way to control the density and diameter of NRs deposited onto a substrate modify the wettability and opens new possibilities for the design of tailored nanomaterials for photochemical applications. Both type of NRs films showed a strong luminescence emission in the UV and in the blue, associated with surface and intrinsic defects.

  13. The role of seeding in the morphology and wettability of ZnO nanorods films on different substrates

    Science.gov (United States)

    Rodríguez, Juan; Onna, Diego; Sánchez, Luis; Marchi, M. Claudia; Candal, Roberto; Ponce, Silvia; Bilmes, Sara A.

    2013-08-01

    Spray pyrolysis (SP) and spray-gel (SG) techniques were used to deposit ZnO seeds on Fluor doped tin oxide glasses (FTO), heated at 350 °C or 130 °C, and PET heated at 90 °C. The effect of seeding on the morphology and wettability of ZnO nanorods (NRs) films grown by wet chemical methods was analyzed. The morphology and wettability of ZnO NRs films depend on the seeding process. SP seeds formed from zinc acetate dissolved in water ethanol mixtures yield vertically aligned ZnO NRs, whose diameters and dispersion size are determined by the ethanol/water ratio in the precursor solution. SG seeds formed from a methanol ZnO sol produce a ring patterned distribution on the FTO substrate. The drying of ZnO sol drops impinging on the substrate produces high density of seeds along a ring yielding textured films with NRs vertically oriented on the rings and multi-oriented outside them. This effect was not observed when ZnO NRs grown onto the ZnO/PET substrate, however rod diameter is related with the density of seeds. This way to control the density and diameter of NRs deposited onto a substrate modify the wettability and opens new possibilities for the design of tailored nanomaterials for photochemical applications. Both type of NRs films showed a strong luminescence emission in the UV and in the blue, associated with surface and intrinsic defects.

  14. Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films

    Science.gov (United States)

    Ohgaki, Takeshi; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime

    2017-10-01

    ScN films were grown on MgO(110) substrates and α-Al2O3(10 1 bar 0) substrates by a molecular beam epitaxy method, and their crystalline orientation, crystallinity, and electric properties were examined. (110)-oriented ScN films were epitaxially grown on MgO(110) substrates with the same crystal orientations, and ScN films with an orientation relationship (110)ScN || (10 1 bar 0)α-Al2O3 and [001]ScN || [ 1 2 bar 10 ]α-Al2O3 were epitaxially grown on α-Al2O3(10 1 bar 0) substrates. Remarkably, electric-resistivity anisotropy was observed for ScN films grown on MgO(110) substrates, and the anisotropy depended on the growth temperature. The carrier concentration and Hall mobility of the ScN films grown on α-Al2O3(10 1 bar 0) substrates ranged from 1019-1021 cm-3 and 10-150 cm2 V-1 s-1, respectively. The crystallinity, crystalline-orientation anisotropy, and electric properties of the films were strongly affected by growth conditions. For the growth of ScN films with high mobility on α-Al2O3(10 1 bar 0) substrates, a high temperature and an appropriate ratio of source materials were necessary.

  15. Growth of magnetite films by a hydrogel method

    Energy Technology Data Exchange (ETDEWEB)

    Velásquez, A.A., E-mail: avelas26@eafit.edu.edu.co [Grupo de Electromagnetismo Aplicado, Universidad EAFIT, A.A. 3300, Medellín (Colombia); Marín, C.C. [Grupo de Electromagnetismo Aplicado, Universidad EAFIT, A.A. 3300, Medellín (Colombia); Urquijo, J.P. [Grupo de Estado Sólido, Instituto de Física, Universidad de Antioquia, A.A. 1226, Medellín (Colombia)

    2017-06-15

    Magnetite (Fe{sub 3}O{sub 4}) films were grown on glass substrates by formation and condensation of complex of iron oxides in an agarose hydrogel. The obtained films were characterized by Fourier Transform Infrared Spectroscopy (FTIR), Thermogravimetric Analysis (TGA), Scanning Electron Microscopy (SEM), Room Temperature Mössbauer Spectroscopy (TMS), Vibrating Sample Magnetometry (VSM), Atomic Force Microscopy (AFM) and Voltage vs. Current measurements by the four-point method. FTIR and TGA measurements showed that some polymer chains of agarose remain linked to the surface of the magnetic particles of the films after heat treatment. SEM measurements showed that the films are composed by quasi spherical particles with sizes around 55 nm. Mössbauer spectroscopy measurements showed two sextets with broaden lines, which were assigned to magnetite with a distributed particle size, and two doublets, which were assigned to superparamagnetic phases of magnetite. For the specific dimensions of the films prepared, measurements of Voltage vs. Current showed an ohmic behavior for currents between 0 and 200 nA, with a resistance of 355 kΩ.

  16. The growth of thin film epitaxial oxide-metal heterostructures

    CERN Document Server

    Wang, C

    1998-01-01

    films with lowest IR emissivity are those made from the purest targets despite their having comparable roughnesses to films from lower purity targets. The lowest emissivity achieved was in the range of 1.64% to 1.72% measured at 3.8 mu m for 1.5 to 1.8 mu m thick films. Modifications to standard idealized Drude theory have been made which, in a phenomenological way, take account of imperfections in the sputtered Al film, oxidation state and roughness. in electric properties of the Nb film and the reduction in crystalline quality of the MgO layer. The reduction of transition temperature to the superconducting state, Tc, and the similarly systematic increase in the Nb lattice parameter were observed consistent with oxygen content data reported in the literature, as the Nb became heavily oxidized. Examination of the surface of clean and oxidized Nb by atomic force microscopy, and deposition of MgO in UHV onto a previously oxidized Nb surface, suggested that the decrease in crystalline quality of the MgO can be a...

  17. Molecular dynamics simulation about porous thin-film growth in secondary deposition

    International Nuclear Information System (INIS)

    Chen Huawei; Tieu, A. Kiet; Liu Qiang; Hagiwara, Ichiro; Lu Cheng

    2007-01-01

    The thin film growth has been confirmed to be assembled by an enormous number of clusters in experiments of CVD. Sequence of clusters' depositions proceeds to form the thin film at short time as gas fluids through surface of substrate. In order to grow condensed thin film using series of cluster deposition, the effect of initial velocity, substrate temperature and density of clusters on property of deposited thin film, especially appearance of nanoscale pores inside thin film must be investigated. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000 and 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Four clusters and one cluster were used in primary deposition and secondary deposition, respectively. We have clarified that adhesion between clusters and substrate is greatly influenced by initial velocity. As a result, the exfoliation pattern of deposited thin film is dependent on initial velocity and different between them. One borderline dividing whole region into porous region and nonporous region are obtained to show the effect of growth conditions on appearance of nanoscale pores inside thin film. Moreover, we have also shown that the likelihood of porous thin film is dependent on the point of impact of a cluster relative to previously deposited clusters

  18. Uniaxial crystal growth in thin film by utilizing supercooled state of mesogenic phthalocyanine

    Science.gov (United States)

    Fiderana Ramananarivo, Mihary; Higashi, Takuya; Ohmori, Masashi; Sudoh, Koichi; Fujii, Akihiko; Ozaki, Masanori

    2016-06-01

    A method of uniaxial crystal growth in wet-processed thin films of the mesogenic phthalocyanine 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2) is proposed. It consists of applying geometrically linear thermal stimulation to a supercooled state of liquid crystalline C6PcH2. The thin film showed highly ordered molecular stacking structure and uniaxial alignment over a macroscopic scale. An explanation of the crystal growth mechanism is suggested by taking into account the temperature range of crystal growth and the hysteresis property of C6PcH2 in the phase transition.

  19. Dependence of critical current properties on growth temperature and doping level of nanorods in PLD-YBa2Cu3Oy films

    International Nuclear Information System (INIS)

    Fujita, N.; Haruta, M.; Ichinose, A.; Maeda, T.; Horii, S.

    2013-01-01

    Highlights: •We fabricated Y123 films with Ba–Nb–O nanorods at various growth temperatures. •Irreversibility lines depended on growth temperature and doping level of Ba–Nb–O. •Nanorod morphology was drastically changed by growth temperature (T s ). •Its T s dependence of the matching field was different from that for Er123 + Ba–Nb–O. -- Abstract: The vortex-Bose-glass-like irreversibility lines (ILs) emerged for 2.5 and 5.0 at.% Ba–Nb–O (BNO)-doped YBa 2 Cu 3 O y films deposited by PLD using Nd:YAG-laser. The ILs strongly depended on growth temperature (T s ) in addition to the doping level of BNO. The vortex glass region was expanded with increasing T s or doping level of BNO. Drastic change of the nanorod morphology from short and bended nanorods to long and linear nanorods with increasing T s was clarified. Moreover, it was found that T s -dependent ILs were quite different from our previous results in BNO-doped ErBa 2 Cu 3 O y films

  20. Self-regulated growth of LaVO3 thin films by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zhang, Hai-Tian; Engel-Herbert, Roman; Dedon, Liv R.; Martin, Lane W.

    2015-01-01

    LaVO 3 thin films were grown on SrTiO 3 (001) by hybrid molecular beam epitaxy. A volatile metalorganic precursor, vanadium oxytriisopropoxide (VTIP), and elemental La were co-supplied in the presence of a molecular oxygen flux. By keeping the La flux fixed and varying the VTIP flux, stoichiometric LaVO 3 films were obtained for a range of cation flux ratios, indicating the presence of a self-regulated growth window. Films grown under stoichiometric conditions were found to have the largest lattice parameter, which decreased monotonically with increasing amounts of excess La or V. Energy dispersive X-ray spectroscopy and Rutherford backscattering measurements were carried out to confirm film compositions. Stoichiometric growth of complex vanadate thin films independent of cation flux ratios expands upon the previously reported self-regulated growth of perovskite titanates using hybrid molecular beam epitaxy, thus demonstrating the general applicability of this growth approach to other complex oxide materials, where a precise control over film stoichiometry is demanded by the application

  1. Stress relaxation and hillock growth in thin films

    International Nuclear Information System (INIS)

    Jackson, M.S.; Li, C.Y.

    1978-01-01

    The relaxation of thermal stress in a thin film adhering to a substrate of differing expansion coefficient is discussed. Good agreement is found between literature data on relaxation during isothermal anneals of Pb films at up to 350 0 K and model calculations based on a state variable description of plastic flow. The stress system during relaxation is explored, and the absence of diffusional creep is explained. The plasticity-dominated relaxation process suggested by this analysis is shown to be in good qualitative agreement with data on rapid relaxation over the course of a cycle between room and cryogenic temperatures. The implications of this for long-range material transport in the film are discussed. It is shown that hillock volume should increase over the course of a temperature cycle. Finally, a mechanism for hillock nucleation based on grain boundary sliding is suggested

  2. Effect of morphology of thin DNA films on the electron stimulated desorption of anions

    Science.gov (United States)

    Mirsaleh-Kohan, Nasrin; Bass, Andrew D.; Sanche, Léon

    2011-01-01

    We present a comparison between the electron stimulated desorption (ESD) of anions from DNA samples prepared by lyophilization (an example of poorly organized or nonuniform films) and molecular self-assembly (well-ordered films). The lyophilization (or freeze- drying) method is perhaps the most frequently employed technique for forming DNA films for studies of low-energy electron (LEE) interactions leading to DNA damage; however, this technique usually produces nonuniform films with considerable clustering which may affect DNA configuration and enhance sample charging when the film is irradiated. Our results confirm the general validity of ESD measurements obtained with lyophilized samples, but also reveal limitations of lyophilization for LEE studies on DNA films. Specifically we observe some modulation of structures, associated with dissociative electron attachment, in the anion yield functions from different types of DNA film, confirming that conformational factors play a role in the LEE induced damage to DNA.

  3. Effect of morphology of thin DNA films on the electron stimulated desorption of anions.

    Science.gov (United States)

    Mirsaleh-Kohan, Nasrin; Bass, Andrew D; Sanche, Léon

    2011-01-07

    We present a comparison between the electron stimulated desorption (ESD) of anions from DNA samples prepared by lyophilization (an example of poorly organized or nonuniform films) and molecular self-assembly (well-ordered films). The lyophilization (or freeze- drying) method is perhaps the most frequently employed technique for forming DNA films for studies of low-energy electron (LEE) interactions leading to DNA damage; however, this technique usually produces nonuniform films with considerable clustering which may affect DNA configuration and enhance sample charging when the film is irradiated. Our results confirm the general validity of ESD measurements obtained with lyophilized samples, but also reveal limitations of lyophilization for LEE studies on DNA films. Specifically we observe some modulation of structures, associated with dissociative electron attachment, in the anion yield functions from different types of DNA film, confirming that conformational factors play a role in the LEE induced damage to DNA.

  4. New Method for Fabrication of Co3O4 Thin Film Sensors: Structural, Morphological and Optoelectronic Properties

    Directory of Open Access Journals (Sweden)

    Vikas PATIL

    2011-05-01

    Full Text Available Nanocrystalline Co3O4 thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH3 gas-sensing technology. In particular, spectrophotometric and conductivity measurements have been performed in order to determine the optical and electrical properties of Co3O4 thin films. The structure and the morphology of such material have been investigated by X ray diffraction and Scanning electron microscopy. The X-ray diffraction studies confirmed that the films grown by this technique have good crystalline cubic spinel structure and present a random orientation. The