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Sample records for film growth morphology

  1. Morphology and growth behavior of O_2-free chemical bath deposited ZnS thin films

    International Nuclear Information System (INIS)

    Jet Meitzner, K.; Tillotson, Brock M.; Siedschlag, Amanda T.; Moore, Frederick G.; Kevan, Stephen D.; Richmond, Geraldine L.

    2015-01-01

    We investigate the role of reagent concentrations and ambient O_2 on the morphology and growth behavior of ZnS thin films grown with the chemical bath deposition method. We investigate the role of substrate on film morphology, and find significant differences between films deposited on SiO_2 versus Si. The films are also sensitive to dissolved O_2 in the bath, as it causes a layer of SiO_2 to form at the ZnS/Si interface during deposition. Degassing of solutions and an N_2 atmosphere are effective to minimize this oxidation, allowing deposition of ZnS films directly onto Si. Under these conditions, we examine film properties as they relate to reagent bath concentrations. As the reagent concentrations are decreased, both the film roughness and growth rate decrease linearly. We also observe deformation and shifting of X-ray diffraction peaks that increases with decreasing reagent concentrations. The shifts are characteristic of lattice compression (caused by the substitution of oxygen for sulfur), and the deformation is characteristic of distortion of the lattice near crystal grain interfaces (caused by tensile stress from interatomic forces between neighboring crystal grains). At the weakest concentrations, the low roughness suggests a mixed growth mode in which both clusters and individual ZnS nanocrystallites contribute to film growth. With increasing reagent concentrations, the growth mode shifts and becomes dominated by deposition of clusters. - Highlights: • We deposit ZnS thin films by chemical bath deposition in an O_2-free environment. • The O_2-free environment is effective to minimize oxidation of the Si substrate. • The dominant growth mechanism changes with reagent concentrations. • Film morphology and composition change with reagent concentrations. • X-ray diffraction reveals tensile stress between ZnS crystal grains.

  2. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth.

    Science.gov (United States)

    Brower, Landon J; Gentry, Lauren K; Napier, Amanda L; Anderson, Mary E

    2017-01-01

    Integration of surface-anchored metal-organic frameworks (surMOFs) within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm) initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm) covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  3. Tailoring the nanoscale morphology of HKUST-1 thin films via codeposition and seeded growth

    Directory of Open Access Journals (Sweden)

    Landon J. Brower

    2017-11-01

    Full Text Available Integration of surface-anchored metal-organic frameworks (surMOFs within hierarchical architectures is necessary for potential sensing, electronic, optical, or separation applications. It is important to understand the fundamentals of film formation for these surMOFs in order to develop strategies for their incorporation with nanoscale control over lateral and vertical dimensions. This research identified processing parameters to control the film morphology for surMOFs of HKUST-1 fabricated by codeposition and seeded deposition. Time and temperature were investigated to observe film formation, to control film thickness, and to tune morphology. Film thickness was investigated by ellipsometry, while film structure and film roughness were characterized by atomic force microscopy. Films formed via codeposition resulted in nanocrystallites anchored to the gold substrate. A dynamic process at the interface was observed with a low density of large particulates (above 100 nm initially forming on the substrate; and over time these particulates were slowly replaced by the prevalence of smaller crystallites (ca. 10 nm covering the substrate at a high density. Elevated temperature was found to expedite the growth process to obtain the full range of surface morphologies with reasonable processing times. Seed crystals formed by the codeposition method were stable and nucleated growth throughout a subsequent layer-by-layer deposition process. These seed crystals templated the final film structure and tailor the features in lateral and vertical directions. Using codeposition and seeded growth, different surface morphologies with controllable nanoscale dimensions can be designed and fabricated for integration of MOF systems directly into device architectures and sensor platforms.

  4. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  5. Growth, morphology, and conductivity in semimetallic/metallic films on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Jnawali, Giriraj

    2009-06-09

    This dissertation deals with the study of epitaxial growth of semimetallic (Bi) and metallic (Ag) films on Si(001) as well as in situ electrical transport study of those films via surface manipulation. The focus of the transport measurements is to study the influence of the surface morphology or structure on the resistance of the film. In spite of the large lattice mismatch and different lattice geometry, it is possible to grow epitaxial Bi(111) films on Si(001) substrates, which are surprisingly smooth, relaxed and almost free of defects. Due to the two-fold symmetry of the substrates, the Bi(111) film is composed of crystallites rotated by 90 with respect to each other. Annealing of 6 nm film from 150 K to 450 K enables the formation of a periodic interfacial misfit dislocations, which accommodates a remaining lattice mismatch of 2.3 %. The surface/interface roughness and the bulk defect density of the film found to be extremely low, indicating the high crystalline quality of the film with atomically smooth surface and abrupt interface. Similar to the Bi films, Ag grows in a (111) orientation on Si(001) with two 90 rotated domains. The remaining strain of 2.2 % (tensile) is accommodated by the formation of an ordered network of dislocations. The Ag film exhibits atomically smooth surface. Those Bi films and Ag films were used as model systems to study the influence of the surface morphology on the electrical resistance. Surprisingly, all the Bi films (3-170 nm thicknesses) have shown an anomalous behavior of conductance with temperature and thickness. As in the case of doped semiconductor, the conductance increases exponentially from 150 K to 300 K and saturates at 350 K before finally decreasing with temperature. In situ measurements of the resistance during additional Bi deposition on the smooth Bi(111) films exhibit a square root dependent with coverage after a linear increase at very low coverage (1 % of a BL). During additional deposition of Bi, carriers are

  6. Organic semiconductor growth and morphology considerations for organic thin-film transistors.

    Science.gov (United States)

    Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

    2010-09-08

    Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

  7. Morphology and grain structure evolution during epitaxial growth of Ag films on native-oxide-covered Si surface

    International Nuclear Information System (INIS)

    Hur, Tae-Bong; Kim, Hong Koo; Perello, David; Yun, Minhee; Kulovits, Andreas; Wiezorek, Joerg

    2008-01-01

    Epitaxial nanocrystalline Ag films were grown on initially native-oxide-covered Si(001) substrates using radio-frequency magnetron sputtering. Mechanisms of grain growth and morphology evolution were investigated. An epitaxially oriented Ag layer (∼5 nm thick) formed on the oxide-desorbed Si surface during the initial growth phase. After a period of growth instability, characterized as kinetic roughening, grain growth stagnation, and increase of step-edge density, a layer of nanocrystalline Ag grains with a uniform size distribution appeared on the quasi-two-dimensional layer. This hierarchical process of film formation is attributed to the dynamic interplay between incoming energetic Ag particles and native oxide. The cyclic interaction (desorption and migration) of the oxide with the growing Ag film is found to play a crucial role in the characteristic evolution of grain growth and morphology change involving an interval of grain growth stagnation

  8. Surface morphology study on chromium oxide growth on Cr films by Nd-YAG laser oxidation process

    International Nuclear Information System (INIS)

    Dong Qizhi; Hu Jiandong; Guo Zuoxing; Lian Jianshe; Chen Jiwei; Chen Bo

    2002-01-01

    Grain sized (60-100 nm) Cr 2 O 3 thin films were prepared on Cr thin film surfaces by Nd-YAG laser photothermal oxidation process. Surface morphology study showed crack-free short plateau-like oxide films formed. Increase of dislocation density after pulsed laser irradiation was found. Thin film external surfaces, grain boundaries and dislocations are main paths of laser surface oxidation. Pinning and sealing of grain boundary was the reason that deeper oxidation did not produce. Grain growth and agglomeration of Cr sub-layer yielded tensile stress on the surface Cr 2 O 3 thin film. It was the reason that short plateau-like surface morphology formed and cracks appeared sometimes. In oxygen annealing at 700 deg. C, grain boundaries were considered not to be pinned at the surface, mixture diffusion was main mechanism in growth of oxide. Compression stress development in whole film led to extrusion of grains that was the reason that multiple appearances such as pyramid-like and nutshell-like morphology formed

  9. Morphological analysis of co-evaporated blend films based on initial growth for organic photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Shibata, Yosei, E-mail: yosei.shibata@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Taima, Tetsuya [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Zhou, Ying; Ohashi, Noboru; Kono, Takahiro [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Yoshida, Yuji, E-mail: yuji.yoshida@aist.go.jp [Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2015-11-15

    Graphical abstract: - Highlights: • Initial growth mode of co-evaporated films was observed. • Balanced crystal growth leads to improvement of photovoltaic performance. • Crystal growth of fullerene during co-evaporation process was restricted. • The power conversion efficiency of 3% was obtained without electron blocking layer. - Abstract: Bulk heterojunction structures composed of electron donor and acceptor molecules for application in high-performance organic photovoltaics studied. To fabricate these structures, the co-evaporation method in vacuum is commonly applied; however, the details of the crystal growth process during co-evaporation have not yet been established. Here, we focused on structural analysis of blend films composed of phthalocyanine and fullerene based on initial growth stage. Similar crystal growth behavior to that typically observed in single-component molecules is obtained for the films. These results suggest that the competitive crystal growth between donors and acceptors occurs during co-evaporation process. The balance of thin film growth among donor and acceptor molecules can be related to improved photovoltaic performance. The homogeneous blend structure leads to improvement of the power conversion efficiency from 1.2% to 3.0%.

  10. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakanth, Katturi Naga; Sunandana, C. S. [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Rajesh, Desapogu, E-mail: rajesh.esapogu@gmail.com, E-mail: mperd@nus.edu.sg [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Dept. of Mechanical Engineering, National University of Singapore (Singapore)

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  11. Growth and surface morphology of ion-beam sputtered Ti-Ni thin films

    International Nuclear Information System (INIS)

    Rao, Ambati Pulla; Sunandana, C.S.

    2008-01-01

    Titanium-nickel thin films have been deposited on float glass substrates by ion beam sputtering in 100% pure argon atmosphere. Sputtering is predominant at energy region of incident ions, 1000 eV to 100 keV. The as-deposited films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). In this paper we attempted to study the surface morphology and elemental composition through AFM and XPS, respectively. Core level as well as valence band spectra of ion-beam sputtered Ti-Ni thin films at various Ar gas rates (5, 7 and 12 sccm) show that the thin film deposited at 3 sccm possess two distinct peaks at binding energies 458.55 eV and 464.36 eV mainly due to TiO 2 . Upon increasing Ar rate oxidation of Ti-Ni is reduced and the Ti-2p peaks begin approaching those of pure elemental Ti. Here Ti-2p peaks are observed at binding energy positions of 454.7 eV and 460.5 eV. AFM results show that the average grain size and roughness decrease, upon increasing Ar gas rate, from 2.90 μm to 0.096 μm and from 16.285 nm to 1.169 nm, respectively

  12. Growth and morphology of aluminium contacts on P3HT films

    Energy Technology Data Exchange (ETDEWEB)

    Kaune, Gunar [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Fachgruppe Photovoltaik, Von-Danckelmann-Platz 3, 06120 Halle (Germany); Meier, Robert; Metwalli, Ezzeldin; Koerstgens, Volker; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Schlage, Kai; Couet, Sebastien; Roth, Stephan V. [HASYLAB, DESY, Notkestrasse 85, 22603 Hamburg (Germany)

    2011-07-01

    The characteristics of organic electronic devices are strongly influenced by the type and structure of the metal electrodes needed to inject or extract charge carriers. Therefore understanding of the metal growth process and its relation to the interactions at the metal-organic interface are necessary. We investigate the growth of an aluminium layer on the surface of a P3HT thin film by in-situ application of grazing incidence small-angle X-ray scattering (GISAXS). By subsequent modelling of the scattering data the structural parameters of the growing film are extracted and a growth process is found, which proceeds two-dimensional by stacking single atomic layers on top each other. This process results in a homogeneous film with a large contact area to the polymer and is explained by a strong chemical interaction between aluminium and P3HT, which suppresses clustering of the metal on the polymer surface. The diffusion of single aluminium atoms into the P3HT and the formation of an intermixing layer is revealed by X-ray reflectivity measurements.

  13. Order-disorder criticality, wetting, and morphological phase transitions in the irreversible growth of far-from-equilibrium magnetic films

    International Nuclear Information System (INIS)

    Candia, J.Julian; Albano, E.V.Ezequiel V.

    2003-01-01

    An exhaustive numerical investigation of the growth of magnetic films in confined (d+1)-dimensional stripped geometries (d=1,2) is carried out by means of extensive Monte Carlo simulations. Films in contact with a thermal bath at temperature T, are grown by adding spins having two possible orientations and considering ferromagnetic (nearest-neighbor) interactions. At low temperatures, thin films of thickness L are constituted by a sequence of well-ordered domains of average length l D >>L. These domains have opposite magnetization. So, the films exhibit 'spontaneous magnetization reversal' during the growth process. Such reversal occurs within a short characteristic length l R , such that l D >>l R ∼L. Furthermore, it is found that for d=1 the system is non-critical, while a continuous order-disorder phase transition at finite temperature takes place in the d=2 case. Using standard finite-size scaling procedures, the critical temperature and some relevant critical exponents are determined. Finally, the growth of magnetic films in (2+1) dimensions with competing short-range magnetic fields acting along the confinement walls is studied. Due to the antisymmetric condition considered, an interface between domains with spins having opposite orientation develops along the growing direction. Such an interface undergoes a localization-delocalization transition that is the precursor of a wetting transition in the thermodynamic limit. Furthermore, the growing interface also undergoes morphological transitions in the growth mode. A comparison between the well-studied equilibrium Ising model and the studied irreversible magnetic growth model is performed throughout. Although valuable analogies are encountered, it is found that the non-equilibrium nature of the latter introduces new and rich physical features of interest

  14. Morphology and kinetics of crystals growth in amorphous films of Cr2O3, deposited by laser ablation

    Science.gov (United States)

    Bagmut, Aleksandr

    2018-06-01

    An electron microscopic investigation was performed on the structure and kinetics of the crystallization of amorphous Cr2O3 films, deposited by pulsed laser sputtering of chromium target in an oxygen atmosphere. The crystallization was initiated by the action of an electron beam on an amorphous film in the column of a transmission electron microscope. The kinetic curves were plotted on the basis of a frame-by-frame analysis of the video recorded during the crystallization of the film. It was found that the amorphous phase - crystal phase transition in Cr2O3 films occurs as a layer polymorphic crystallization and is characterized by the values of the dimensionless relative length unit δ0 ≈ 2000-3100. The action of the electron beam initiates the formation of crystals of two basic morphological forms: disk-shaped and sickle-shaped. Growth of a disk-shaped crystals is characterized by a constant rate v and the quadratic dependence of the fraction of the crystalline phase x on the time t. Sickle-shaped crystal at an initial stage, as it grows, becomes as ring-shaped and disk-shaped crystal. The growth of a sickle-shaped crystal is characterized by normal and tangential velocity components, which depend on the time as ∼√t and as ∼1/√t respectively The end point of the arc at the interface between the amorphous and crystalline phases as the crystal grows describes a curve, which is similar to the Fermat helix. For sickle-shaped, as well as for disk-shaped crystals, the degree of crystallinity x ∼ t2.

  15. Growth morphology and structure of bismuth thin films on GaSb(110)

    DEFF Research Database (Denmark)

    Gemmeren, T. van; Lottermoser, L.; Falkenberg, G.

    1998-01-01

    Photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and surface X-ray diffraction were used to investigate the growth of thin layers of bismuth on GaSb(110). At submonolayer coverages, growth of two-dimensional islands occurs. A uniform (1 x I)-reconstructio...... that the (1 x 1)-phases formed by antimony and bismuth adsorbates on (110) surfaces of other III-V compound semiconductors are also described by the epitaxial continued layer model. (C) 1998 Elsevier Science B.V. All rights reserved....

  16. Growth Rate and Morphology of a Single Calcium Carbonate Crystal on Polysulfone Film Measured with Time Lapse Raman Micro Spectroscopy

    NARCIS (Netherlands)

    Liszka, B.; Lenferink, Aufrid T.M.; Otto, Cornelis

    2016-01-01

    The growth of single, self- nucleated calcium carbonate crystals on a polysulfone (PSU) film was investigated with high resolution, time lapse Raman imaging. The Raman images were acquired on the interface of the polymer with the crystal. The growth of crystals could thus be followed in time. PSU is

  17. (0 0 2-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    Guo Dongyun

    2016-09-01

    Full Text Available Zinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0 substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2 preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylaminoethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2-oriented ZnO thin films were formed by adjusting the baking temperature.

  18. Oxidation films morphology

    International Nuclear Information System (INIS)

    Paidassi, J.

    1960-01-01

    After studying the oxidation of several pure polyvalent metals (Fe, Cu, Mn, Ni, U) and of their oxides at high temperature and atmospheric pressure, the author suggests how to modify the usual representation of the oxide film (a piling of different oxide layers, homogeneous on a micrographic scale with a equi-axial crystallisation, free of mechanical tensions, with flat boundary surfaces) to have it nearer to reality. In this first part, the author exposes the study of the real micrographic structure of the oxidation film and gives examples of precipitation in the oxides during the cooling of the oxidised sample. (author) [fr

  19. Morphology of PVD films

    International Nuclear Information System (INIS)

    Carr, M.J.; Grotzky, V.K.; Helms, C.J.; Johns, W.L.; Naimon, E.R.; Rafalski, A.L.; Smith, C.J.

    1982-01-01

    Experimental data show that the morphology of PVD chromium coatings is dependent on substrate temperature, deposition rate, and the oxygen content of the chromium source material. For chromium containing about 700-ppM oxygen, a variety of morphologies can form depending on substrate temperature and deposition rate. For chromium contaning 1000 to 2000 ppM of oxygen, porous coatings of the Type IV variety are produced over essentially the full range of temperatures and rates possible with current coating equipment. For chromium containing less than about 400 ppM of oxygen, dense coatings of the Type I variety are produced over the range of temperatures and rates investigated

  20. Growth of manganese sulfide (α-MnS) thin films by thermal vacuum evaporation: Structural, morphological and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia); Segura, Alfredo [MALTA-Consolider Team, Institut de Ciència dels Materials – Departamento de Fisica Aplicada, University of Valencia, E-46100 Burjassot, Valencia (Spain); Maghraoui-Meherzi, Hager [Université de Tunis El-Manar, Faculté des Sciences de Tunis, Laboratoire de Chimie Analytique et Electrochimie, LR99ES15, 2092 Tunis (Tunisia)

    2016-09-15

    MnS thin films have been successfully prepared by thermal evaporation method at different substrate temperatures using different masses of MnS powder. The prepared films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and UV–visible spectrophotometry. The XRD measurements show that the films crystallized in the pure α-MnS for substrate temperatures above 100 °C. The optical bandgap of thin films is found to be in the range of 3.2–3.3 eV. A factorial experimental design was used for determining the influence of the two experimental parameters on the films growth. - Highlights: • α-MnS films were deposited on glass and quartz substrates using the thermal evaporation technique. • The effect of substrate temperature on the properties of the MnS films has been studied. • The factorial design was used to determine the most influence parameters.

  1. Effect of selenization time on the structural and morphological properties of Cu(In,Ga)Se2 thin films absorber layers using two step growth process

    Science.gov (United States)

    Korir, Peter C.; Dejene, Francis B.

    2018-04-01

    In this work two step growth process was used to prepare Cu(In, Ga)Se2 thin film for solar cell applications. The first step involves deposition of Cu-In-Ga precursor films followed by the selenization process under vacuum using elemental selenium vapor to form Cu(In,Ga)Se2 film. The growth process was done at a fixed temperature of 515 °C for 45, 60 and 90 min to control film thickness and gallium incorporation into the absorber layer film. The X-ray diffraction (XRD) pattern confirms single-phase Cu(In,Ga)Se2 film for all the three samples and no secondary phases were observed. A shift in the diffraction peaks to higher 2θ (2 theta) values is observed for the thin films compared to that of pure CuInSe2. The surface morphology of the resulting film grown for 60 min was characterized by the presence of uniform large grain size particles, which are typical for device quality material. Photoluminescence spectra show the shifting of emission peaks to higher energies for longer duration of selenization attributed to the incorporation of more gallium into the CuInSe2 crystal structure. Electron probe microanalysis (EPMA) revealed a uniform distribution of the elements through the surface of the film. The elemental ratio of Cu/(In + Ga) and Se/Cu + In + Ga strongly depends on the selenization time. The Cu/In + Ga ratio for the 60 min film is 0.88 which is in the range of the values (0.75-0.98) for best solar cell device performances.

  2. Influence of growth time on crystalline structure, morphologic and optical properties of In2O3 thin films

    International Nuclear Information System (INIS)

    Attaf, A.; Bouhdjar, A.; Saidi, H.; Benkhetta, Y.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-01-01

    Indium oxide (In 2 O 3 ) thin films are successfully deposited on glass substrate at different deposition timings by ultrasonic spray technique using Indium chloride (InCl 3 ) material source witch is prepared with dissolvent Ethanol (C 2 H 5 -OH), the physical properties of these films are characterized by XRD, MEB,UV-visible. XRD analysis revealed that the films are polycrystalline in nature having centered cubic crystal structure and symmetry space group I2 1 3 with a preferred grain orientation along to (222) plane when the deposition time changes from 4 to 10 min but after t = 10 min, especially when t = 13 min we found that the majority of grains preferred the plane (400). The maximum value of grain size D = 61,51 nm is attained for In 2 O 3 films grown at t =10 min. the average transmittance is about 72%, The optical gap energy is found to decrease from 3.8 to 3.66 eV with growth time Increased from 4 to 10 min but after t = 10 min the value of E g will increase to 3.72 eV. A systematic study on the influence of growth time on the properties of In 2 O 3 thin films deposited by ultrasonic spray at 400 °C has been reported

  3. Influence of growth time on crystalline structure, morphologic and optical properties of In2O3 thin films

    Science.gov (United States)

    Attaf, A.; Bouhdjar, A.; Saidi, H.; Benkhetta, Y.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

    2015-03-01

    Indium oxide (In2O3) thin films are successfully deposited on glass substrate at different deposition timings by ultrasonic spray technique using Indium chloride (InCl3) material source witch is prepared with dissolvent Ethanol (C2H5-OH), the physical properties of these films are characterized by XRD, MEB,UV-visible. XRD analysis revealed that the films are polycrystalline in nature having centered cubic crystal structure and symmetry space group I213 with a preferred grain orientation along to (222) plane when the deposition time changes from 4 to 10 min but after t = 10 min, especially when t = 13 min we found that the majority of grains preferred the plane (400). The maximum value of grain size D = 61,51 nm is attained for In2O3 films grown at t =10 min. the average transmittance is about 72%, The optical gap energy is found to decrease from 3.8 to 3.66 eV with growth time Increased from 4 to 10 min but after t = 10 min the value of Eg will increase to 3.72 eV. A systematic study on the influence of growth time on the properties of In2O3 thin films deposited by ultrasonic spray at 400 °C has been reported.

  4. Formation of complex wedding-cake morphologies during homoepitaxial film growth of Ag on Ag(111): atomistic, step-dynamics, and continuum modeling

    International Nuclear Information System (INIS)

    Li Maozhi; Han, Yong; Thiel, P A; Evans, J W

    2009-01-01

    An atomistic lattice-gas model is developed which successfully describes all key features of the complex mounded morphologies which develop during deposition of Ag films on Ag(111) surfaces. We focus on this homoepitaxial thin film growth process below 200 K. The unstable multilayer growth mode derives from the presence of a large Ehrlich-Schwoebel step-edge barrier, for which we characterize both the step-orientation dependence and the magnitude. Step-dynamics modeling is applied to further characterize and elucidate the evolution of the vertical profiles of these wedding-cake-like mounds. Suitable coarse-graining of these step-dynamics equations leads to instructive continuum formulations for mound evolution.

  5. Modification of Morphological, Structural and Optical Properties of CBD-Based Growth of PbS Films on Glass Substrates by Addition of Saccharin

    Directory of Open Access Journals (Sweden)

    Yasin YÜCEL

    2018-03-01

    Full Text Available Saccharin which so-called as benzoic sulfimide is an artificial sweetener. In this paper, nanostructured lead sulfide (PbS thin films were produced in the presence of additive known as saccharin via chemical bath deposition (CBD. Effect of the saccharin content on the morphological, optical and structural properties of the films has been investigated. Lead sulfide (PbS films that included additive were prepared at five different concentrations of saccharin (from 0 to 5%. The fabricated samples were characterized by surface roughness, scanning electron microscopy (SEM, X-Ray diffraction and UV-vis spectroscopy. It was found that the presence of saccharin highly affected the optical and structural properties of PbS thin films. According to the X-Ray diffraction results, crystallite size values of the films decreased from 12.88 to 5.25 nm with increasing of saccharin content. UV-vis measurements showed that both the band gap and transmission properties of the films increased as a result of increasing saccharin concentration. Further, Surface roughness measurements exhibited that average surface roughness was diminished with increasing saccharin content. As a result, it has been found that the presence of saccharin in growth solution played a significant mission in adjusting the main physical properties of the samples.

  6. Ice films follow structure zone model morphologies

    International Nuclear Information System (INIS)

    Cartwright, Julyan H.E.; Escribano, Bruno; Sainz-Diaz, C. Ignacio

    2010-01-01

    Ice films deposited at temperatures of 6-220 K and at low pressures in situ in a cryo-environmental scanning electron microscope show pronounced morphologies at the mesoscale consistent with the structure zone model of film growth. Water vapour was injected directly inside the chamber at ambient pressures ranging from 10 -4 Pa to 10 2 Pa. Several different substrates were used to exclude the influence of their morphology on the grown films. At the lowest temperatures the ice, which under these conditions is amorphous on the molecular scale, shows the mesoscale morphologies typical of the low-temperature zones of the structure zone model (SZM), including cauliflower, transition, spongelike and matchstick morphologies. Our experiments confirm that the SZM is independent of the chemical nature of the adsorbate, although the intermolecular interactions in water (hydrogen bonds) are different to those in ceramics or metals. At higher temperatures, on the other hand, where the ice is hexagonal crystalline on the molecular scale, it displays a complex palmlike morphology on the mesoscale.

  7. Ice films follow structure zone model morphologies

    Energy Technology Data Exchange (ETDEWEB)

    Cartwright, Julyan H.E. [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain); Escribano, Bruno, E-mail: bruno.escribano.salazar@gmail.co [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain); Sainz-Diaz, C. Ignacio [Instituto Andaluz de Ciencias de la Tierra, CSIC-Universidad de Granada, E-18071 Granada (Spain)

    2010-04-02

    Ice films deposited at temperatures of 6-220 K and at low pressures in situ in a cryo-environmental scanning electron microscope show pronounced morphologies at the mesoscale consistent with the structure zone model of film growth. Water vapour was injected directly inside the chamber at ambient pressures ranging from 10{sup -4} Pa to 10{sup 2} Pa. Several different substrates were used to exclude the influence of their morphology on the grown films. At the lowest temperatures the ice, which under these conditions is amorphous on the molecular scale, shows the mesoscale morphologies typical of the low-temperature zones of the structure zone model (SZM), including cauliflower, transition, spongelike and matchstick morphologies. Our experiments confirm that the SZM is independent of the chemical nature of the adsorbate, although the intermolecular interactions in water (hydrogen bonds) are different to those in ceramics or metals. At higher temperatures, on the other hand, where the ice is hexagonal crystalline on the molecular scale, it displays a complex palmlike morphology on the mesoscale.

  8. Growth of porous anodized alumina on the sputtered aluminum films with 2D-3D morphology for high specific surface area

    Science.gov (United States)

    Liao, M. W.; Chung, C. K.

    2014-08-01

    The porous anodic aluminum oxide (AAO) with high-aspect-ratio pore channels is widely used as a template for fabricating nanowires or other one-dimensional (1D) nanostructures. The high specific surface area of AAO can also be applied to the super capacitor and the supporting substrate for catalysis. The rough surface could be helpful to enhance specific surface area but it generally results in electrical field concentration even to ruin AAO. In this article, the aluminum (Al) films with the varied 2D-3D morphology on Si substrates were prepared using magnetron sputtering at a power of 50 W-185 W for 1 h at a working pressure of 2.5 × 10-1 Pa. Then, AAO was fabricated from the different Al films by means of one-step hybrid pulse anodizing (HPA) between the positive 40 V and the negative -2 V (1 s:1 s) for 3 min in 0.3 M oxalic acid at a room temperature. The microstructure and morphology of Al films were characterized by X-ray diffraction, scanning electron microscope and atomic force microscope, respectively. Some hillocks formed at the high target power could be attributed to the grain texture growth in the normal orientation of Al(1 1 1). The 3D porous AAO structure which is different from the conventional 2D planar one has been successfully demonstrated using HPA on the film with greatly rough hillock-surface formed at the highest power of 185 W. It offers a potential application of the new 3D AAO to high specific surface area devices.

  9. Growth of porous anodized alumina on the sputtered aluminum films with 2D–3D morphology for high specific surface area

    Energy Technology Data Exchange (ETDEWEB)

    Liao, M.W.; Chung, C.K., E-mail: ckchung@mail.ncku.edu.tw

    2014-08-01

    The porous anodic aluminum oxide (AAO) with high-aspect-ratio pore channels is widely used as a template for fabricating nanowires or other one-dimensional (1D) nanostructures. The high specific surface area of AAO can also be applied to the super capacitor and the supporting substrate for catalysis. The rough surface could be helpful to enhance specific surface area but it generally results in electrical field concentration even to ruin AAO. In this article, the aluminum (Al) films with the varied 2D–3D morphology on Si substrates were prepared using magnetron sputtering at a power of 50 W–185 W for 1 h at a working pressure of 2.5 × 10⁻¹ Pa. Then, AAO was fabricated from the different Al films by means of one-step hybrid pulse anodizing (HPA) between the positive 40 V and the negative -2 V (1 s:1 s) for 3 min in 0.3 M oxalic acid at a room temperature. The microstructure and morphology of Al films were characterized by X-ray diffraction, scanning electron microscope and atomic force microscope, respectively. Some hillocks formed at the high target power could be attributed to the grain texture growth in the normal orientation of Al(1 1 1). The 3D porous AAO structure which is different from the conventional 2D planar one has been successfully demonstrated using HPA on the film with greatly rough hillock-surface formed at the highest power of 185 W. It offers a potential application of the new 3D AAO to high specific surface area devices.

  10. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  11. Effect of growth time on the structure, morphology and optical properties of hydrothermally synthesized TiO2 nanorod thin films

    Science.gov (United States)

    Mohapatra, A. K.; Nayak, J.

    2018-05-01

    Titanium dioxide (TiO2) nanorod thin films were deposited on fluorine doped tin oxide coated glass substrates by a single step rapid hydrothermal process. The concentration of the precursor, the temperature of the reaction mixture were optimized in order to enhance the rate of deposition. Unlike the previously reported hydrothermal treatment for 24 - 48 h, the deposition of well aligned titanium dioxide nanorods was achieved in a short time such as 3 - 8 h. The crystal structure of the films were investigated by X-rays diffraction. The morphology of the nanorod films were studied with scanning electron microscopy. The optical properties were studied by photoluminescence spectroscopy.

  12. Growth of different phases and morphological features of MnS thin films by chemical bath deposition: Effect of deposition parameters and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com; Maghraoui-Meherzi, Hager

    2017-03-15

    Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferential orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like. - Graphical Abstract: We report the preparation of different phases of manganese sulfide thin films (γ, β and α-MnS) by chemical bath deposition method. The effects of deposition parameters such as deposition time and temperature, concentrations of precursors and multi-layer deposition on MnS thin films structure and morphology were investigated. The influence of thermal annealing under nitrogen atmosphere at different temperature on MnS properties was also studied. Different manganese precursors as well as different complexing agent were also used. - Highlights: • γ and β-MnS films were deposited on substrate using the chemical bath deposition. • The effect of deposition parameters on MnS film properties has been investigated. • Multi-layer deposition was also studied to increase film thickness. • The effect of annealing under N{sub 2} at different temperature was investigated.

  13. Growth morphologies of crystal surfaces

    Science.gov (United States)

    Xiao, Rong-Fu; Alexander, J. Iwan D.; Rosenberger, Franz

    1991-03-01

    We have expanded our earlier Monte Carlo model [Phys. Rev. A 38, 2447 (1988); J. Crystal Growth 100, 313 (1990)] to three dimensions and included reevaporation after accommodation and growth on dislocation-induced steps. We found again that, for a given set of growth parameters, the critical size, beyond which a crystal cannot retain its macroscopically faceted shape, scales linearly with the mean free path in the vapor. However, the three-dimensional (3D) the systems show increased shape stability compared to corresponding 2D cases. Extrapolation of the model results to mean-free-path conditions used in morphological stability experiments leads to order-of-magnitude agreement of the predicted critical size with experimental findings. The stability region for macroscopically smooth (faceted) surfaces in the parameter space of temperature and supersaturation depends on both the surface and bulk diffusion. While surface diffusion is seen to smooth the growth morphology on the scale of the surface diffusion length, bulk diffusion is always destabilizing. The atomic surface roughness increases with increase in growth temperature and supersaturation. That is, the tendency of surface kinetics anisotropies to stabilize the growth shape is reduced through thermal and kinetic roughening. It is also found that the solid-on-solid assumption, which can be advantageously used at low temperatures and supersaturations, is insufficient to describe the growth dynamics of atomically rough interfaces where bulk diffusion governs the process. For surfaces with an emerging screw dislocation, we find that the spiral growth mechanism dominates at low temperatures and supersaturations. The polygonization of a growth spiral decreases with increasing temperature or supersaturation. When the mean free path in the nutrient is comparable to the lattice constant, the combined effect of bulk and surface diffusion reduces the terrace width of a growth spiral in its center region. At elevated

  14. Role of organoclay in controlling the morphology and crystal-growth behavior of biodegradable polymer-blend thin films studied using atomic force microscopy

    CSIR Research Space (South Africa)

    Malwela, T

    2014-09-01

    Full Text Available clays, their organic modifications and their initial d(sub001)-spacing on the morphology and crystal growth behavior of the PLA/PBSA blend were studied. An atomic force microscopy equipped with a hot-stage scanner was used to examine the crystalline...

  15. Ellipsometry of anodic film growth

    Energy Technology Data Exchange (ETDEWEB)

    Smith, C.G.

    1978-08-01

    An automated computer interpretation of ellisometer measurements of anodic film growth was developed. Continuous mass and charge balances were used to utilize more fully the time dependence of the ellipsometer data and the current and potential measurements. A multiple-film model was used to characterize the growth of films which proceeds via a dissolution--precipitation mechanism; the model also applies to film growth by adsorption and nucleation mechanisms. The characteristic parameters for film growth describe homogeneous and heterogeneous crystallization rates, film porosities and degree of hydration, and the supersaturation of ionic species in the electrolyte. Additional descriptions which may be chosen are patchwise film formation, nonstoichiometry of the anodic film, and statistical variations in the size and orientation of secondary crystals. Theories were developed to describe the optical effects of these processes. An automatic, self-compensating ellipsometer was used to study the growth in alkaline solution of anodic films on silver, cadmium, and zinc. Mass-transport conditions included stagnant electrolyte and forced convection in a flow channel. Multiple films were needed to characterize the optical properties of these films. Anodic films grew from an electrolyte supersatuated in the solution-phase dissolution product. The degree of supersaturation depended on transport conditions and had a major effect on the structure of the film. Anodic reaction rates were limited by the transport of charge carriers through a primary surface layer. The primary layers on silver, zinc, and cadmium all appeared to be nonstoichiometric, containing excess metal. Diffusion coefficients, transference numbers, and the free energy of adsorption of zinc oxide were derived from ellipsometer measurements. 97 figures, 13 tables, 198 references.

  16. Controlling Film Morphology in Conjugated Polymer

    Science.gov (United States)

    Park, Lee Y.; Munro, Andrea M.; Ginger, David S.

    2009-01-01

    We study the effects of patterned surface chemistry on the microscale and nanoscale morphology of solution-processed donor/acceptor polymer-blend films. Focusing on combinations of interest in polymer solar cells, we demonstrate that patterned surface chemistry can be used to tailor the film morphology of blends of semiconducting polymers such as poly-[2-(3,7-dimethyloctyloxy)-5-methoxy-p-phenylenevinylene] (MDMO-PPV), poly-3-hexylthiophene (P3HT), poly[(9,9-dioctylflorenyl-2,7-diyl)-co-benzothiadiazole)] (F8BT), and poly(9,9-dioctylfluorene-co-bis-N,N’-(4-butylphenyl)-bis-N,N’-phenyl-1,4-phenylendiamine) (PFB) with the fullerene derivative, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). We present a method for generating patterned, fullerene-terminated monolayers on gold surfaces, and use microcontact printing and Dip-Pen Nanolithography (DPN) to pattern alkanethiols with both micro- and nanoscale features. After patterning with fullerenes and other functional groups, we backfill the rest of the surface with a variety of thiols to prepare substrates with periodic variations in surface chemistry. Spin coating polymer:PCBM films onto these substrates, followed by thermal annealing under nitrogen, leads to the formation of structured polymer films. We characterize these films with Atomic Force Microscopy (AFM), Raman spectroscopy, and fluorescence microscopy. The surface patterns are effective in guiding phase separation in all of the polymer:PCBM systems investigated, and lead to a rich variety of film morphologies that are inaccessible with unpatterned substrates. We demonstrate our ability to guide pattern formation in films thick enough of be of interest for actual device applications (up to 200 nm in thickness) using feature sizes as small as 100 nm. Finally, we show that the surface chemistry can lead to variations in film morphology on length scales significantly smaller than those used in generating the original surface patterns. The variety of

  17. Surface smoothening effects on growth of diamond films

    Science.gov (United States)

    Reshi, Bilal Ahmad; Kumar, Shyam; Kartha, Moses J.; Varma, Raghava

    2018-04-01

    We have carried out a detailed study of the growth dynamics of the diamond film during initial time on diamond substrates. The diamond films are deposited using Microwave Plasma Chemical Vapor Deposition (MPCVD) method for different times. Surface morphology and its correlation with the number of hours of growth of thin films was invested using atomic force microscopy (AFM). Diamond films have smooth interface with average roughness of 48.6873nm. The initial growth dynamics of the thin film is investigated. Interestingly, it is found that there is a decrease in the surface roughness of the film. Thus a smoothening effect is observed in the grown films. The film enters into the growth regime in the later times. Our results also find application in building diamond detector.

  18. Morphology and stress study of nanostructured porous silicon as a substrate for PbTe thin films growth by electrochemical process

    Directory of Open Access Journals (Sweden)

    Claudia Renata Borges Miranda

    2004-12-01

    Full Text Available Porous silicon layers (PSL were produced by stain etching from a HF:HNO3 500:1 mixture with etching time varying in the range of 1 up to 10 min. The samples have presented nanometric porosity as a function of etching time, characteristic of heavily doped p type silicon. The residual stress and the correlation length of the layers were obtained through the analysis of the micro-Raman spectra using a phonon confinement model including a term to account for the amorphous phase. The residual compressive stress tends to increase as expected due to the contribution of smaller crystallites to be more representative as the etching time increases. PbTe thin films were electrodeposited on PSL from aqueous alkaline solutions of Pb(CH3COO2, disodium salt of ethylendiaminetetraacetic acid (EDTA and TeO2 by galvanostatic and potentiostatic method. It was also obtained nanostructured PbTe thin films with polycrystalline morphology evidenced by X-ray Diffraction (XRD spectra. Scanning Electron Microscopy (SEM analysis has demonstrated good films reproducibility with an average grain size of 100 nm.

  19. The influence of nanoscale morphology on the resistivity of cluster-assembled nanostructured metallic thin films

    International Nuclear Information System (INIS)

    Barborini, E; Bertolini, G; Repetto, P; Leccardi, M; Vinati, S; Corbelli, G; Milani, P

    2010-01-01

    We have studied in situ the evolution of the electrical resistivity of Fe, Pd, Nb, W and Mo cluster-assembled films during their growth by supersonic cluster beam deposition. We observed resistivity of cluster-assembled films several orders of magnitude larger than the bulk, as well as an increase in resistivity by increasing the film thickness in contrast to what was observed for atom-assembled metallic films. This suggests that the nanoscale morphological features typical of ballistic films growth, such as the minimal cluster-cluster interconnection and the evolution of surface roughness with thickness, are responsible for the observed behaviour.

  20. Characterization of chemical vapour deposited diamond films: correlation between hydrogen incorporation and film morphology and quality

    International Nuclear Information System (INIS)

    Tang, C J; Neves, A J; Carmo, M C

    2005-01-01

    In order to tailor diamond synthesized through chemical vapour deposition (CVD) for different applications, many diamond films of different colours and variable quality were deposited by a 5 kW microwave plasma CVD reactor under different growth conditions. The morphology, quality and hydrogen incorporation of these films were characterized using scanning electron microscopy (SEM), Raman and Fourier-transform infrared (FTIR) spectroscopy, respectively. From this study, a general trend between hydrogen incorporation and film colour, morphology and quality was found. That is, as the films sorted by colour gradually become darker, ranging from white through grey to black, high magnification SEM images illustrate that the smoothness of the well defined crystalline facet gradually decreases and second nucleation starts to appear on it, indicating gradual degradation of the crystalline quality. Correspondingly, Raman spectra evidence that the diamond Raman peak at 1332 cm -1 becomes broader and the non-diamond carbon band around 1500 cm -1 starts to appear and becomes stronger, confirming increase of the non-diamond component and decrease of the phase purity of the film, while FTIR spectra show that the CH stretching band and the two CVD diamond specific peaks around 2830 cm -1 rise rapidly, and this indicates that the total amount of hydrogen incorporated into the film increases significantly

  1. Structural, morphological and optical properties of thermal annealed TiO thin films

    International Nuclear Information System (INIS)

    Zribi, M.; Kanzari, M.; Rezig, B.

    2008-01-01

    Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

  2. Surface preparation for the heteroepitactic growth of ceramic thin films

    International Nuclear Information System (INIS)

    Norton, M.G.; Summerfelt, S.R.; Carter, C.B.

    1990-01-01

    The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron-transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO 3 , and (001) LaAlO 3

  3. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P., E-mail: pmilani@mi.infn.it [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); Sogne, E. [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); European School of Molecular Medicine (SEMM), IFOM-IEO, Milano (Italy); Merlini, M. [Dipartimento di Scienze della Terra “Ardito Desio”, Università degli Studi di Milano, via Mangiagalli 32, 20133 Milano (Italy); Ducati, C. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2016-08-07

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

  4. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    International Nuclear Information System (INIS)

    Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P.; Sogne, E.; Merlini, M.; Ducati, C.

    2016-01-01

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

  5. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    KAUST Repository

    Borghi, F.; Sogne, Elisa; Lenardi, C.; Podestà , A.; Merlini, M.; Ducati, C.; Milani, P.

    2016-01-01

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

  6. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    KAUST Repository

    Borghi, F.

    2016-08-05

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

  7. Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

    2018-06-01

    Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

  8. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  9. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    International Nuclear Information System (INIS)

    Salcedo, K L; Rodriguez, C A; Perez, F A; Riascos, H

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al 2 O 3 ) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  10. Electron confinement in thin metal films. Structure, morphology and interactions

    Energy Technology Data Exchange (ETDEWEB)

    Dil, J.H.

    2006-05-15

    This thesis investigates the interplay between reduced dimensionality, electronic structure, and interface effects in ultrathin metal layers (Pb, In, Al) on a variety of substrates (Si, Cu, graphite). These layers can be grown with such a perfection that electron confinement in the direction normal to the film leads to the occurrence of quantum well states in their valence bands. These quantum well states are studied in detail, and their behaviour with film thickness, on different substrates, and other parameters of growth are used here to characterise a variety of physical properties of such nanoscale systems. The sections of the thesis deal with a determination of quantum well state energies for a large data set on different systems, the interplay between film morphology and electronic structure, and the influence of substrate electronic structure on their band shape; finally, new ground is broken by demonstrating electron localization and correlation effects, and the possibility to measure the influence of electron-phonon coupling in bulk bands. (orig.)

  11. Mesoscale control of organic crystalline thin films: effects of film morphology on the performance of organic transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jaekyun; Park, Sungkyu [Chung-Ang University, Seoul (Korea, Republic of); Kim, Yonghoon [Sungkyunkwan University, Suwon (Korea, Republic of)

    2014-08-15

    We report mesoscale control of small molecular 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) crystalline thin films by varying the solute concentration in the fluidic channel method. A stepwise increase in the TIPS-pentacene concentration in the solution enabled us to prepare highly-crystallized ribbons, thin films, and thick films in a mesoscale range, respectively. All three types of deposited films exhibited an in-plane crystalline nature of (001) direction being normal to the substrate as well as crystalline domain growth parallel to the direction of the receding meniscus inside the fluidic channel. In addition, the film's morphology and thickness were found to have a great influence on the field-effect mobility of the transistors, and the highest average and maximum mobilities were achieved from transistors with thin-film semiconductor channels.

  12. Semantic growth of morphological families in English

    Directory of Open Access Journals (Sweden)

    Henry Regina

    2013-01-01

    Full Text Available This paper explores the question of when and how morphological families are formed in one’s mental lexicon, by analyzing age-of-acquisition norms to morphological families (e.g., booking, bookshelf, check book and their shared morphemes (book. We demonstrate that the speed of growth and the size of the family depend on how early the shared morpheme is acquired and how many connections the family has at the time a new concept is incorporated in the family. These findings dovetail perfectly with the Semantic Growth model of connectivity in semantic networks by Steyvers and Tenenbaum (2005. We discuss implications of our findings for theories of vocabulary acquisition.

  13. Morphology of CdSe films prepared by chemical bath deposition: The role of substrate

    International Nuclear Information System (INIS)

    Simurda, M.; Nemec, P.; Formanek, P.; Nemec, I.; Nemcova, Y.; Maly, P.

    2006-01-01

    We combine optical spectroscopy and transmission electron microscopy to study the growth and the structural morphology of CdSe films prepared by chemical bath deposition (CBD) on two considerably different substrates. The films grown on glass are compact and strongly adherent to the substrate. On the contrary, the films deposited on carbon-coated glass (with approx. 20 nm thick amorphous carbon layer) are only loosely adherent to the substrate. Using transmission electron microscopy we revealed that even though the films grown on both substrates are assembled from closely spaced nanocrystals with diameter of about 5 nm, the films morphology on the sub-micrometer scale is considerably different in the two cases. While the films deposited on glass are rather compact, the films prepared on carbon layer have high porosity and are formed by interconnected spheres which size is dependent on the duration of deposition (e.g. 155 nm for 6 h and 350 nm for 24 h). This shows that the choice of the substrate for CBD has a stronger influence on the sub-micrometer film morphology than on the properties of individual nanocrystals forming the film

  14. Growth rate enhancement and morphology engineering of diamond films by adding CO.sub.2./sub. or N.sub.2./sub. in hydrogen rich gas chemistry

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Davydova, Marina; Varga, Marián; Potocký, Štěpán; Kromka, Alexander

    2014-01-01

    Roč. 6, č. 7 (2014), s. 749-755 ISSN 2164-6627 R&D Projects: GA MPO FR-TI2/736; GA ČR GAP205/12/0908; GA ČR(CZ) GP14-16549P Institutional support: RVO:68378271 Keywords : microwave plasma CVD * diamond growth * nitrogen * carbon dioxide * growth rate * SEM Subject RIV: BM - Solid Matter Physics ; Magnetism

  15. Neurocranial morphology and growth in Williams syndrome.

    Science.gov (United States)

    Axelsson, Stefan; Kjaer, Inger; Heiberg, Arvid; Bjørnland, Tore; Storhaug, Kari

    2005-02-01

    Williams syndrome (WS) is a rare congenital neurodevelopmental disorder with distinctive facial features, cardiovascular abnormalities, short stature, mental retardation, and behaviour and cognitive characteristics. The aim of this study was to describe the neurocranial morphology and growth in a group of 62 individuals with WS. The neurocranium was analysed on lateral cephalograms and comparisons were made with neurocranial standards from longitudinal data derived from the Oslo University Craniofacial Growth Archive. The size and morphology of the neurocranium in WS subjects differed from controls. Females as a group showed greater differences than males. The posterior cranial base length was shorter in both WS males and females, and the anterior cranial base length was shorter in WS females whereas it was close to normal in the WS male group. The cranial base angle was, however, not different from the control groups. A flattening was seen in the superior aspect of the parietal bone in both WS males and females. In the posterior part of the neurocranium, the prominence of the occipital bone was larger than in the control groups, which was also reflected in a larger total length of the neurocranium. The thickness of the frontal and occipital bones was considerably greater than in the control group. The deviant size and morphology of the neurocranium in WS subjects was already established in the youngest age group and maintained throughout the observation period. The growth pattern of the neurocranium in WS subjects seemed to be similar to that of the control groups, except in a few individuals.

  16. Growth model of Au films on Ru(001)

    International Nuclear Information System (INIS)

    Canessa, E.; Calmetta, A.

    1992-06-01

    In an attempt to find generic features on the fractal growth of Au films deposited on Ru(001), a simple simulation model based on irreversible diffusion-limited aggregation (DLA) is discussed. Highly irregular two-dimensional dentritic islands of Au particles that gradually grow on a larger host lattice of Ru particles and have fractal dimension d f approx. 1.70 each, are generated via a multiple had-hoc version of the DLA algorithm for single aggregates. Annealing effects on the islands morphology are reproduced assuming different sticking probabilities at nearest-neighbour lattice sites of Au films on Ru(001). Using simulation data, islands growth are described in analogy to diffusion-limited, precipitate growth with soft impingement of precipities. This leads to analyse thin film island growth kinetics in such fractal systems and to predict a main peak in scattering intensity patterns due to interisland interference. (author). 12 refs, 4 figs

  17. Morphology selection for cupric oxide thin films by electrodeposition.

    Science.gov (United States)

    Dhanasekaran, V; Mahalingam, T; Chandramohan, R

    2011-10-01

    Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

  18. Morphology Analysis of Cu Film Fractures in Sandwiched Methylmethacrylate Plates

    Directory of Open Access Journals (Sweden)

    Cristiano Fidani

    2015-06-01

    Full Text Available Thin films of Cu were evaporated on solid plates of polymethylmethacrylate (PMMA. A polymerization process was made to realize sandwiched structure to protect the Cu films. Fracturing of the metal film surface was observed with several morphologies showing two different fracture systems. Surface film morphology was analysed in terms of the distribution area of the islands and contour fractal dimension. The island areas showed a maximum corresponding to 42 nm of the Cu thickness, it was also the threshold to observe the second fracture system. The fractures pattern resulted to be scale invariant with fractal dimensions between 1.55 and 1.7. The minimum fractal dimension also occurred at the film thickness corresponding to the maximum island area. The reported effects can be understood on the basis of different thermal expansion coefficients of the two materials and their thermally induced adhesion.DOI: http://dx.doi.org/10.5755/j01.ms.21.2.6518

  19. Multi-scale characterization of surface blistering morphology of helium irradiated W thin films

    International Nuclear Information System (INIS)

    Yang, J.J.; Zhu, H.L.; Wan, Q.; Peng, M.J.; Ran, G.; Tang, J.; Yang, Y.Y.; Liao, J.L.; Liu, N.

    2015-01-01

    Highlights: • Multi-scale blistering morphology of He irradiated W film was studied. • This complex morphology was first characterized by wavelet transform approach. - Abstract: Surface blistering morphologies of W thin films irradiated by 30 keV He ion beam were studied quantitatively. It was found that the blistering morphology strongly depends on He fluence. For lower He fluence, the accumulation and growth of He bubbles induce the intrinsic surface blisters with mono-modal size distribution feature. When the He fluence is higher, the film surface morphology exhibits a multi-scale property, including two kinds of surface blisters with different characteristic sizes. In addition to the intrinsic He blisters, film/substrate interface delamination also induces large-sized surface blisters. A strategy based on wavelet transform approach was proposed to distinguish and extract the multi-scale surface blistering morphologies. Then the density, the lateral size and the height of these different blisters were estimated quantitatively, and the effect of He fluence on these geometrical parameters was investigated. Our method could provide a potential tool to describe the irradiation induced surface damage morphology with a multi-scale property

  20. Effect of oxygen on the surface morphology of CuGaS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Smaili, F., E-mail: fethi.smaili@voila.fr [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs -ENIT BP 37, Le belvedere 1002-Tunis (Tunisia)

    2009-08-01

    Since the effect of oxygen is very significant during the heat treatment of the thin films, we study the effect of this during the annealing of CuGaS{sub 2} thin films by two different types. In this study, CuGaS{sub 2} thin films were deposited by vacuum thermal evaporation of CuGaS{sub 2} powder on heated glass substrates at 200 deg. C submitted to a thermal gradient. The films are annealed in air and under nitrogen atmosphere at 400 deg. C for 2 h. In order to improve our understanding of the influence of oxygen during two annealing types on device performance, we have investigated our CuGaS{sub 2} material by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDX) and spectrophotometry. A correlation was established between the surface roughness, growth morphology and optical properties, of the annealed CuGaS{sub 2} thin films. It was found that annealing of CuGaS{sub 2} film in nitrogen atmosphere leads to a decrease of the mean grain size and to an evolution of a (112) preferred film orientation. Annealing in air results in the growth of oxide phases such as CuO and modifies the films structure and their surface morphology.

  1. Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

    Science.gov (United States)

    Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

    2010-04-16

    We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

  2. Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, H; Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Sachan, R; Strader, J; Kalyanaraman, R [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Khenner, M, E-mail: ramki@utk.edu [Department of Mathematics, Western Kentucky University, Bowling Green, KY 42101 (United States)

    2010-04-16

    We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO{sub 2} under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm {<=} h {<=} 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm {<=} h {<=} 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO{sub 2}. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

  3. Growth of ultra-thin Ag films on Ni(111)

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Axel; Flege, Jan Ingo; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany); Senanayake, Sanjaya [Chemistry Department, Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Alamgir, Faisal [Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

    2009-07-01

    The physical and chemical properties of ultra-thin metal films on metallic substrates strongly depend on their morphology and the structure of the buried interface. Hence, detailed knowledge of the growth mechanisms is essential for the creation of new functional materials with novel characteristics. In this contribution, we present a comprehensive structural study of the growth and properties of epitaxial Ag films on Ni(111) by in-situ low energy electron microscopy (LEEM). For lower temperatures, the growth of the Ag film proceeds in a Stranski-Krastanov mode after completion of the wetting layer, while for higher temperatures layer-by-layer growth is observed. Quantitative information about the film structure were obtained by analyzing the intensity-voltage (I-V) dependence of the local electron reflectivity (IV-LEEM). The corresponding I(V) spectra showed intensity oscillations depending on local thickness of the Ag film due to the quantum size effect (QSE). Modeling of the I(V) spectra was performed both within the framework of a one-dimensional Kronig-Penney model and multiple scattering IV-LEED calculations. The results of both approaches concerning the variation of the layer spacings and interface characteristics for different temperatures and film thicknesses will be discussed.

  4. Substrate dependent morphologies of self-assembled nanocrystalline manganite films: An atomic force microscopy study

    International Nuclear Information System (INIS)

    Kale, S.N.; Mona, J.; Ganesan, V.; Choudhary, R.J.; Phase, D.M.

    2009-06-01

    Thin films of La 0 .7Sr 0 .3MnO 3 (LSMO) have been deposited on different substrates: Si (001), Al 2 O 3 (AlO) (0001) and LaAlO 3 (LAO) (001), using a pulsed laser deposition system. 100 nm films have been deposited at substrate temperature of 700 deg C and oxygen partial pressure of 400 mTorr. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al 2 O 3 substrates, while a c-axis oriented growth on LAO substrate. Atomic force microscopy images exhibit interesting island-like morphology of grain size ∼ 250 nm on Si substrate. Similar morphology with much smaller (∼ 150 nm), closely packed islands are seen to grow on AlO substrate. Films on LAO show comparatively a smooth morphology with the grains size less than 100 nm, decorated by characteristic depressions at the grain boundaries. The formation of self-assembled nanostructures can be understood on the basis of film-substrate lattice misfit, strains in the systems and eventual growth of the films to attain energy minimization (author)

  5. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Unknown

    moves from low preparation temperature to high preparation temperature. The amorphous .... nm and the interac- tion between the pi-electron clouds of the two layers re- .... sp2 configuration forms to minimize stress and making. C900 films ...

  6. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  7. Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

    Energy Technology Data Exchange (ETDEWEB)

    Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-01-31

    The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

  8. Growth of anodic films on niobium

    International Nuclear Information System (INIS)

    Gomes, M.A.B.; Bulhoes, L.O.S.

    1988-01-01

    The analysis of the response of the galvanostatic growth of anodic films on niobium metal in aqueous solutions is shown. The first spark voltage showed a dependence upon value of current density that could be explained as the incorporation of anions into the film. (M.J.C.) [pt

  9. Growth of organic films on indoor surfaces

    DEFF Research Database (Denmark)

    Weschler, Charles J.; Nazaroff, W. W.

    2017-01-01

    predictions indicate that film growth would primarily be influenced by the gas-phase concentration of SVOCs with octanol-air partitioning (Koa) values in the approximate range 10≤log Koa≤13. Within the relevant range, SVOCs with lower values will equilibrate with the surface film more rapidly. Over time...

  10. Crystal structure and thin film morphology of BBL ladder polymer

    Energy Technology Data Exchange (ETDEWEB)

    Song, H H [Department of Macromolecular Science, Han Nam University, Taejon (Korea, Republic of); Fratini, A V [Department of Chemistry, University of Dayton, Dayton, OH (United States); Chabinyc, M [Department of Chemistry, University of Dayton, Dayton, OH (United States); Price, G E [University of Dayton Research, Dayton, OH (United States); Agrawal, A K [Systran Corporation, Dayton, OH (United States); Wang, C S [University of Dayton Research, Dayton, OH (United States); Burkette, J [University of Dayton Research, Dayton, OH (United States); Dudis, D S [Materials Directorate, Wright Laboratory, Wright-Patterson Air Force Base, OH (United States); Arnold, F E [Materials Directorate, Wright Laboratory, Wright-Patterson Air Force Base, OH (United States)

    1995-03-01

    Crystal structure and morphology of poly[7-oxo-7H-benz(d,e)imidazo(4`,5`:5,6)-benzimidazo(2,1-a)isoquinoline-3,4:10,11-tetrayl-10-carbonyl] (BBL) ladder-like polymer were studied. The polymer forms a two-dimensional lattice of nematic liquid crystalline structure. An orthorhombic unit cell with cell parameters of a=7.87 b=3.37 c=11.97A was determined from the fiber diffraction pattern. In thin films, the rigid chains spontaneously form a layered structure across the film thickness, but in a very unusual manner, i.e. the very large molecular plane is standing perpendicularly to the film surface plane. The results are identical to our recent results of poly(p-phenylene benzobisthiazole) (PBT) film [7]. The polymer, however, lost its anisotropic order upon extrusion into a film and resulted in a fiber-like structure. (orig.)

  11. Morphologic and crystallographic studies on electrochemically formed chromium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Amezawa, Koji [Graduate School of Environmental Studies, Tohoku University, 6-6-01 Aramaki-Aoba, Aoba-ku, Sendai 980-8579 (Japan); Goto, Takuya; Tsujimura, Hiroyuki; Hagiwara, Rika; Tomii, Yoichi [Graduate School of Energy Science, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Uchimoto, Yoshiharu [Graduate School of Human and Environmental Studies, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Ito, Yasuhiko [Department of Environmental Systems Science, Faculty of Engineering, Doshisya University, Kyotanabe-shi, Kyoto 610-0321 (Japan)

    2007-11-20

    Chromium nitride films were prepared by anodically oxidizing nitride ions at 0.4-1.5 V versus Li{sup +}/Li on chromium substrates in molten LiCl-KCl-Li{sub 3}N systems at 723 K. A crystalline Cr{sub 2}N film was successfully prepared at 0.4-1.4 V, and was thicker at more positive electrolytic potential. At 1.5 V, a Cr-N film could be also obtained, but its growth rate was relatively low. The film prepared at 1.5 V consisted of two distinctive layers. The surface layer was amorphous Cr-N containing crystalline CrN particles, and the inner layer was crystalline CrN. It was considered the existence of the amorphous phase suppressed the film growth. (author)

  12. Annealing assisted structural and surface morphological changes in Langmuir–Blodgett films of nickel octabutoxy phthalocyanine

    Energy Technology Data Exchange (ETDEWEB)

    Shilpa Harish, T.; Viswanath, P., E-mail: viswanath@cnsms.res.in

    2016-01-01

    We report our studies on thin films of metallo-phthalocyanine (MPc), Nickel(II)1,4,8,11,15,18,22,25-octabutoxy-29H,31H-phthalocyanine (NiPc(OBu){sub 8}) transferred in a well defined thermodynamic state over a self assembled monolayer (octadecyl trichlorosilane)/SiO{sub 2}/Si substrate using the Langmuir–Blodgett (LB) method. The films are characterized using differential scanning calorimetry (DSC), grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) techniques. DSC studies on powdered samples in the bulk indicate enantiotropic solid–solid phase transition. GIXD studies on the as-deposited LB film show a Bragg peak indicating crystallinity of the thin film. Annealing (373 K) results in reduction of lattice spacing (1.21 Å) signifying changes in molecular packing within the unit cell. At this stage, an additional Bragg peak is observed which grows at the expense of the former one and they coexist between 373 K and 423 K. A discontinuity in lattice spacing from 20.73 to 15.12 Å with annealing indicates clearly a structural change of the underlying crystalline lattice. Correspondingly, the surface morphology images obtained using AFM show, with annealing, a transformation from spherical granular morphology to elongated, flat crystallites suggesting asymmetric growth process. Statistical parameters of the grain extracted from the AFM images show that the size, fractal dimension and circularity are affected by annealing. Based on these studies, we infer the structural and surface morphological changes of the meta-stable phase (Form I) to the stable phase (Form II) in annealed LB films of phthalocyanine. - Highlights: • Langmuir–Blodgett (LB) films of phthalocyanine subjected to thermal annealing. • Structural transformation and coexistence of polymorphs in LB films • Surface morphology changes from nanoscale grains to elongated crystallites. • Reduction of fractal dimension and circularity index reveals asymmetric growth.

  13. In situ spectroscopic ellipsometry as a surface sensitive tool to probe thin film growth

    International Nuclear Information System (INIS)

    Liu, C.

    1999-01-01

    Sputtered thin film and multilayer x-ray mirrors are made routinely at the Advanced Photon Source (APS) for the APS users. Precise film growth control and characterization are very critical in fabricating high-quality x-ray mirrors. Film thickness calibrations are carried out using in situ and ex situ spectroscopic ellipsometry, interferometry, and x-ray scattering. To better understand the growth and optical properties of different thin film systems, we have carried out a systematic study of sputtered thin films of Au, Rh, Pg Pd, Cu, and Cr, using in situ ellipsometry. Multiple data sets were obtained in situ for each film material with incremental thicknesses and were analyzed with their correlation in mind. We found that in situ spectroscopic ellipsometry as a surface-sensitive tool can also be used to probe the growth and morphology of the thin film system. This application of in situ spectroscopic ellipsometry for metal thin film systems will be discussed

  14. Physiochemical Characterization of Iodine (V Oxide Part II: Morphology and Crystal Structure of Particulate Films

    Directory of Open Access Journals (Sweden)

    Brian K. Little

    2015-11-01

    Full Text Available In this study, the production of particulate films of iodine (V oxides is investigated. The influence that sonication and solvation of suspended particles in various alcohol/ketone/ester solvents have on the physical structure of spin or drop cast films is examined in detail with electron microscopy, powder x-ray diffraction, and UV-visible absorption spectroscopy. Results indicate that sonicating iodine oxides in alcohol mixtures containing trace amounts of water decreases deposited particle sizes and produces a more uniform film morphology. UV-visible spectra of the pre-cast suspensions reveal that for some solvents, the iodine oxide oxidizes the solvent, producing I2 and lowering the pH of the suspension. Characterizing the crystals within the cast films reveal their composition to be primarily HI3O8, their orientations to exhibit a preferential orientation, and their growth to be primarily along the ac-plane of the crystal, enhanced at higher spin rates. Spin-coating at lower spin rates produces laminate-like particulate films versus higher density, one-piece films of stacked particles produced by drop casting. The particle morphology in these films consists of a combination of rods, plates, cubes, and rhombohedra structure.

  15. Controlled morphologies and optical properties of ZnO films and their photocatalytic activities

    Energy Technology Data Exchange (ETDEWEB)

    Duan Jingjing [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Liu Xiaoheng, E-mail: xhliu@mail.njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Han Qiaofeng [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Wang Xin, E-mail: wangx@mail.njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China)

    2011-09-15

    Highlights: > Gelatin acts as a capping reagent in the morphology synthesis of ZnO films. > The microstructures of ZnO films are hexagonal prisms, plates and rose-like crystals. > The hexagonal prisms and rose-like films exhibit excellent photocatalytic activities. - Abstract: ZnO films with three different microstructures including hexagonal prisms, plates and rose-like twinned crystals were fabricated using chemical bath deposition with different concentration of gelatin. The growth mechanisms of ZnO films were discussed, and the gelatin played a vital role as a polyelectrolyte capping the formation of microstructures. The photoluminescence and Raman properties were found sensitive to the crystal morphologies of ZnO films. Significantly, the photodegradation efficiencies of methylene blue under UV light irradiation in the presence of ZnO films consisted of hexagonal prisms and rose-like twinned crystals were 95% and 96%, respectively. The excellent photocatalytic activities can be ascribed to the high oxygen vacancies concentration and high percentage of polar planes, and this result was important in addressing the origin of high photocatalytic activity.

  16. Optical properties and surface morphology of ZnTe thin films prepared by multiple potential steps

    Energy Technology Data Exchange (ETDEWEB)

    Gromboni, Murilo F.; Lucas, Francisco W. S.; Mascaro, Lucia H., E-mail: lmascaro@ufscar.br [Universidade de Federal de Sao Carlos (LIEC/UFSCar), SP (Brazil). Departamento de Quimica. Lab. de Eletroquimica e Ceramica

    2014-03-15

    In this work, the ZnTe thin films were electrodeposited using potentiostatic steps, on Pt substrate. The effect of steps number, the deposition time for each element (Zn or Te) and layer order (Zn/Te or Te/Zn) in the morphology, composition, band gap energy and photocurrent was evaluated. Microanalysis data showed that the ratio Zn/Te ranged from 0.12 and 0.30 and the film was not stoichiometric. However, the band-gap value obtained from in all experimental conditions used in this work was 2.28 eV, indicating film growth of ZnTe. The samples with higher Zn showed higher photocurrent, which was of the order of 2.64 μA cm{sup -2} and dendritic morphology (author)

  17. Investigation of Au/Au(100) film growth with energetic deposition by kinetic Monte Carlo simulation

    International Nuclear Information System (INIS)

    Zhang Qingyu; Ma Tengcai; Pan Zhengying; Tang Jiayong

    2000-01-01

    The Au/Au(100) epitaxial growth with energetic deposition was simulated by using kinetic Monte Carlo method. The influences of energetic atoms on morphology and atomistic processes in the early stage of film growth were investigated. The reentrant layer-by-layer growth was observed in the temperature range of 450 K to 100 K. The authors found the energetic atoms can promote the nucleation and island growth in the early stages of film growth and enhance the smoothness of film surface at temperatures of film growth in 3-dimensional mode and in quasi-two-dimensional mode. The atomistic mechanism that promotes the nucleation and island growth and enhances the smoothness of film surface is discussed

  18. Morphological and optical properties of silicon thin films by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Schwarz, R.; Melo, L.V.; Ramalho, R.; Alves, E.; Marques, C.P.; Santos, L.; Almeida, R.; Conde, O.

    2009-01-01

    Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 deg. C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J x cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature

  19. Pulsed Laser Deposition of Zinc Sulfide Thin Films on Silicon: The influence of substrate orientation and preparation on thin film morphology and texture

    OpenAIRE

    Heimdal, Carl Philip J

    2014-01-01

    The effect of orientation and preparation of silicon substrates on the growth morphology and crystalline structure of ZnS thin films deposited by pulsed laser deposition (PLD) has been investigated through scanning electron microscopy (SEM) and grazing incidence x-ray diffraction (GIXRD). ZnS thin films were grown on silicon (100) and (111), on HF-treated and untreated silicon (100) as well as substrates coated with Al, Ge and Au. The ZnS films showed entirely different morphologies for ZnS f...

  20. Role of nucleation in nanodiamond film growth

    International Nuclear Information System (INIS)

    Lifshitz, Y.; Lee, C.H.; Wu, Y.; Zhang, W.J.; Bello, I.; Lee, S.T.

    2006-01-01

    Nanodiamond films were deposited using different microwave plasma chemical vapor deposition schemes following several nucleation pretreatment methods. The nucleation efficiency and the films structure were investigated using scanning and transmission electron microscopy and Raman spectroscopy. C 2 dimer growth (CH 4 and H 2 in 90% Ar) cannot nucleate diamond and works only on existing diamond surfaces. The methyl radical process (up to 20% CH 4 in H 2 ) allows some nucleation probability on appropriate substrates. Prolonged bias enhanced nucleation initiates both diamond nucleation and growth. C 2 dimer growth results in pure nanodiamond free of amorphous carbon, while prolonged bias enhanced nucleation forms an amorphous carbon/nanodiamond composite

  1. Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

    Science.gov (United States)

    Li, Bin; Zhang, Qin-Jian; Shi, Yan-Chao; Li, Jia-Jun; Li, Hong; Lu, Fan-Xiu; Chen, Guang-Chao

    2014-08-01

    A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD) and Raman spectra, respectively. The nanocrystalline grains are averagely with 80 nm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses (100) dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.

  2. Morphology and structural studies of WO_3 films deposited on SrTiO_3 by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kalhori, Hossein; Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael; Ranjbar, Mehdi; Salamati, Hadi

    2016-01-01

    Highlights: • Highly oriented WO_3 stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO_3 films at 700 °C from monoclinic to tetragonal. - Abstract: WO_3 films have been grown by pulsed laser deposition on SrTiO_3 (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

  3. Morphology and molecular orientation of ethyl-substituted dicyanovinyl-sexithiophene films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Hinrichs, Karsten [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Department Berlin, Albert-Einstein-Strasse 9, 12489 Berlin (Germany); Levichkova, Marieta, E-mail: marieta.levichkova@heliatek.com [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Wynands, David [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Walzer, Karsten [Heliatek GmbH, Treidlerstrasse 3, 01139 Dresden (Germany); Eichhorn, Klaus J. [Leibniz-Institut fuer Polymerforschung Dresden e.V., Hohe Strasse 6, 01069 Dresden (Germany); Baeuerle, Peter [Institut fuer Organische Chemie II und Neue Materialien, Universitaet Ulm, 89081 Ulm (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-12-15

    Enhancement of the efficiency of organic solar cell devices requires knowledge about the structure of the organic layers involved. Films of the donor material dicyanovinyl-sexithiophene bearing four ethyl side-chains at thiophenes two and five DCV6T-Et(2,2,5,5) (DCV6T-Et) are prepared by thermal evaporation in high vacuum at various thicknesses and substrate temperatures. Infrared spectroscopic ellipsometry is used for determination of the molecular orientation in the thin films grown on room temperature (RT) substrate. From simulation of the IR ellipsometric data, the film thickness and the anisotropic optical constants of the DCV6T-Et films are determined. It is found that the optical constants strongly depend on the film thickness. Different average molecular orientations are determined for a few molecules thin (4 nm) and somewhat thicker (20 nm) films. Furthermore, the evolution of the surface morphology of films deposited at elevated substrate temperatures (80 Degree-Sign C, 100 Degree-Sign C) is studied in comparison to the thick RT-film. Atomic force microscopy images indicate that the growth on heated substrate is accompanied by an increase in grain size and surface roughness of the films. Simultaneously, the measured optical absorption spectra display structured and increased absorption in the red spectral region for the DCV6T-Et films deposited at higher substrate temperatures. The changes in surface topography and optical response relate to improved molecular arrangement induced by the substrate heating. To demonstrate the morphological influence on solar cell performance, we finally discuss DCV6T-Et/C60 planar heterojunction solar cells composed of DCV6T-Et films deposited at different substrate temperatures. - Highlights: Black-Right-Pointing-Pointer Room temperature (RT) and heated dicyanovinyl-sexithiophene (DCV6T) films Black-Right-Pointing-Pointer Different orientations determined by IR ellipsometry for thin and thick RT films Black

  4. Light-emitting dendrimer film morphology: A neutron reflectivity study

    Science.gov (United States)

    Vickers, S. V.; Barcena, H.; Knights, K. A.; Thomas, R. K.; Ribierre, J.-C.; Gambino, S.; Samuel, I. D. W.; Burn, P. L.; Fragneto, Giovanna

    2010-06-01

    We have used neutron reflectivity (NR) measurements to probe the physical structure of phosphorescent dendrimer films. The dendrimers consisted of fac-tris(2-phenylpyridyl)iridium(III) cores, biphenyl-based dendrons (first or second generation), and perdeuterated 2-ethylhexyloxy surface groups. We found that the shape and hydrodynamic radius of the dendrimer were both important factors in determining the packing density of the dendrimers. "Cone" shaped dendrimers were found to pack more effectively than "spherical" dendrimers even when the latter had a smaller radius. The morphology of the films determined by NR was consistent with the measured photoluminescence and charge transporting properties of the materials.

  5. Structural, morphological and electronic properties of pulsed laser grown Eu2O3 thin films

    Science.gov (United States)

    Kumar, Sandeep; Prakash, Ram; Choudhary, R. J.; Phase, D. M.

    2018-05-01

    Herein, we report the growth, structural, morphological and electronic properties of Europium sesquioxide (Eu2O3) thin films on Si [1 0 0] substrate using pulsed laser deposition technique. The films were deposited at ˜750 °C substrate temperature while the oxygen partial pressure (OPP) was varied (vacuum,˜1 mTorr, ˜10 mTorr and ˜300 mTorr). X-ray diffraction results confirm the single phase cubic structure of the film grown at ˜300 mTorr. The XRD results are also supported by the Raman's spectroscopy results. Eu-3d XPS core level spectra confirms the dominant contributions from the "3+" states of Eu in the film.

  6. Structural, morphological and optical properties of pulsed laser deposited ZnSe/ZnSeO3 thin films

    Science.gov (United States)

    Hassan, Syed Ali; Bashir, Shazia; Zehra, Khushboo; Salman Ahmed, Qazi

    2018-04-01

    The effect of varying laser pulses on structural, morphological and optical behavior of Pulsed Laser Deposited (PLD) ZnSe/ZnSeO3 thin films has been investigated. The films were grown by employing Excimer laser (100 mJ, 248 nm, 18 ns, 30 Hz) at various number of laser pulses i.e. 3000, 4000, 5000 and 6000 with elevated substrate temperature of 300 °C. One film was grown at Room Temperature (RT) by employing 3000 number of laser pulses. In order to investigate the structural analysis of deposited films, XRD analysis was performed. It was observed that the room temperature is not favorable for the growth of crystalline film. However, elevated substrate temperature to 300°C, two phases with preferred orientation of ZnSeO3 (2 1 2) and ZnSe (3 3 1) were identified. AFM and SEM analysis were performed to explore the surface morphology of grown films. Morphological analysis also confirmed the non-uniform film growth at room temperature. At elevated substrate temperature (300 °C), the growth of dendritic rods and cubical crystalline structures are observed for lower number of laser pulses i.e. 3000 and 4000 respectively. With increased number of pulses i.e. 5000 and 6000, the films surface morphology becomes smooth which is confirmed by measurement of surface RMS roughness. Number of grains, skewness, kurtosis and other parameters have been evaluated by statistical analysis. In order to investigate the thickness, and optical properties of deposited films, ellipsometery and UV–Vis spectroscopy techniques were employed. The estimated band gap energy is 2.67 eV for the film grown at RT, whereas band gap values varies from 2.80 eV to 3.01 eV for the films grown at 300 °C with increasing number of laser pulses.

  7. Ag films deposited on Si and Ti: How the film-substrate interaction influences the nanoscale film morphology

    Science.gov (United States)

    Ruffino, F.; Torrisi, V.

    2017-11-01

    Submicron-thick Ag films were sputter deposited, at room temperature, on Si, covered by the native SiO2 layer, and on Ti, covered by the native TiO2 layer, under normal and oblique deposition angle. The aim of this work was to study the morphological differences in the grown Ag films on the two substrates when fixed all the other deposition parameters. In fact, the surface diffusivity of the Ag adatoms is different on the two substrates (higher on the SiO2 surface) due to the different Ag-SiO2 and Ag-TiO2 atomic interactions. So, the effect of the adatoms surface diffusivity, as determined by the adatoms-substrate interaction, on the final film morphology was analyzed. To this end, microscopic analyses were used to study the morphology of the grown Ag films. Even if the homologous temperature prescribes that the Ag film grows on both substrates in the zone I described by the structure zone model some significant differences are observed on the basis of the supporting substrate. In the normal incidence condition, on the SiO2/Si surface a dense close-packed Ag film exhibiting a smooth surface is obtained, while on the TiO2/Ti surface a more columnar film morphology is formed. In the oblique incidence condition the columnar morphology for the Ag film occurs both on SiO2/Si and TiO2/Ti but a higher porous columnar film is obtained on TiO2/Ti due to the lower Ag diffusivity. These results indicate that the adatoms diffusivity on the substrate as determined by the adatom-surface interaction (in addition to the substrate temperature) strongly determines the final film nanostructure.

  8. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  9. Effect of pulse biasing on the morphology of diamond films grown by hot filament CVD

    International Nuclear Information System (INIS)

    Beake, B.D.; Hussain, I.U.; Rego, C.; Ahmed, W.

    1999-01-01

    There has been considerable interest in the chemical vapour deposition (CVD) of diamond due to its unique mechanical, optical and electronic properties, which make it useful for many applications. For use in optical and electronic applications further developments in the CVD process are required to control the surface morphology and crystal size of the diamond films. These will require a detailed understanding of both the nucleation and growth processes that effect the properties. The technique of bias enhanced nucleation (BEN) of diamond offers better reproducibility than conventional pre-treatment methods such as mechanical abrasion. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used study the surface modification of diamond films on silicon substrates during pulse biased growth in a hot filament CVD reactor. Pre-abraded silicon substrates were subjected to a three-step sequential growth process: (i) diamond deposition under standard CVD conditions, (ii) bias pre-treatment and (iii) deposition under standard conditions. The results show that the bias pre-treatment time is a critical parameter controlling the surface morphology and roughness of the diamond films deposited. Biasing reduces the surface roughness from 152 nm for standard CVD diamond to 68 nm for the 2.5 minutes pulse biased film. Further increase in the bias time results in an increase in surface roughness and crystallite size. (author)

  10. INFLUENCE OF ELECTROPOLYMERIZATION METHOD ON MORPHOLOGIES AND CAPACITIVE PROPERTIES OF POLYPYRROLE FILMS GROWING ON SILICON

    OpenAIRE

    IMENE CHIKOUCHE; ALI SAHARI; AHMED ZOUAOUI

    2014-01-01

    Two methods of Pyrrole electropolymerization were investigated to prepare polypyrrole films growing onto n-doped silicon n-Si (111): Polypyrrole films prepared by galvanostatic method exhibits toroidal morphology for thin films, and mixture of toroidal and globular morphologies for thick films. Polypyrrole films obtained from this method were characterized by lower surface roughness. Electropolymerization of pyrrole by potentiodynamic method provided Polypyrrole films with beans-like structur...

  11. Morphology of polymer-based films for organic photovoltaics

    OpenAIRE

    Ruderer, Matthias A.

    2012-01-01

    In this thesis, polymer-based films are examined for applications in organic photovoltaics. Polymer-fullerene, polymer-polymer and diblock copolymer systems are characterized as active layer materials. The focus is on experimental parameters influencing the morphology formation of the active layer in organic solar cells. Scattering and imaging techniques provide a complete understanding of the internal structure on different length scales which is compared to spectroscopic and photovoltaic pr...

  12. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

    2006-07-15

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

  13. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    International Nuclear Information System (INIS)

    Xue Wenbin

    2006-01-01

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

  14. Correlation of morphology and barrier properties of thin microwave plasma polymer films on metal substrate

    International Nuclear Information System (INIS)

    Barranco, V.; Carpentier, J.; Grundmeier, G.

    2004-01-01

    The barrier properties of thin model organosilicon plasma polymers layers on iron are characterised by means of electrochemical impedance spectroscopy (EIS). Tailored thin plasma polymers of controlled morphology and chemical composition were deposited from a microwave discharge. By the analysis of the obtained impedance diagrams, the evolution of the water uptake φ, coating resistance and polymer capacitance with immersion time were monitored and the diffusion coefficients of the water through the films were calculated. The impedance data correlated well with the chemical structure and morphology of the plasma polymer films with a thickness of less than 100 nm. The composition of the films were determined by means of infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The morphology of the plasma polymer surface and the interface between the plasma polymer and the metal were characterised using atomic force microscopy (AFM). It could be shown that, at higher pressure, the film roughness increases which is probably due to the adsorption of plasma polymer nanoparticles formed in the plasma bulk and the faster film growth. This leads to voids with a size of a few tens of nanometers at the polymer/metal interface. The film roughness increases from the interface to the outer surface of the film. By lowering the pressure and thereby slowing the deposition rate, the plasma polymers perfectly imitate the substrate topography and lead to an excellent blocking of the metal surface. Moreover, the ratio of siloxane bonds to methyl-silyl groups increases which implies that the crosslink density is higher at lower deposition rate. The EIS data consistently showed higher coating resistance as well as lower interfacial capacitance values and a better stability over time for the film deposited at slower pressure. The diffusion coefficient of water in thin and ultra-thin plasma

  15. Visualization modeling of thin film growth in photodeposition processes

    International Nuclear Information System (INIS)

    Mirchin, N.; Sidi, M.; Muchnik, Y.; Peled, A.

    2003-01-01

    A computer visualization technique, which analyzes and predicts the spatio-temporal evolution of thin film deposition and growth processes is given. It relies on microscopy sampled or computer generated synthetic micrographs of particles. These are then simulated for deposition, aggregation and coagulation during thin film growth by frequency domain transform techniques. Particle sources and diffusion operators on surfaces are used to predict with high temporal resolution, unattained by real world microscopy the surface structure evolution as time samples and time movies. The simulation program was used to investigate deposition and diffusive profiles in photodeposition experiments, starting from initial synthetic micrographs based on real world scanning electron microscopy (SEM) images. The surface microstructure time 'tracking' scheme described here relies on transforming the original image of the deposited particles into a Fourier spatial frequency domain image. The physical models used are that of a material random deposition source and subsequent surface redistribution due to diffusion and other coalescence material surface flow mechanisms. The 2-D inverse Fourier transform (IFT) is finally used to obtain back the real space-time images representing the surface spatio-temporal films morphology changes. False color representation of the images allows for a better discrimination of the films growing details especially during the fast pre-compact thin film layer formation on the substrate

  16. Visualization modeling of thin film growth in photodeposition processes

    Energy Technology Data Exchange (ETDEWEB)

    Mirchin, N.; Sidi, M.; Muchnik, Y.; Peled, A

    2003-03-15

    A computer visualization technique, which analyzes and predicts the spatio-temporal evolution of thin film deposition and growth processes is given. It relies on microscopy sampled or computer generated synthetic micrographs of particles. These are then simulated for deposition, aggregation and coagulation during thin film growth by frequency domain transform techniques. Particle sources and diffusion operators on surfaces are used to predict with high temporal resolution, unattained by real world microscopy the surface structure evolution as time samples and time movies. The simulation program was used to investigate deposition and diffusive profiles in photodeposition experiments, starting from initial synthetic micrographs based on real world scanning electron microscopy (SEM) images. The surface microstructure time 'tracking' scheme described here relies on transforming the original image of the deposited particles into a Fourier spatial frequency domain image. The physical models used are that of a material random deposition source and subsequent surface redistribution due to diffusion and other coalescence material surface flow mechanisms. The 2-D inverse Fourier transform (IFT) is finally used to obtain back the real space-time images representing the surface spatio-temporal films morphology changes. False color representation of the images allows for a better discrimination of the films growing details especially during the fast pre-compact thin film layer formation on the substrate.

  17. Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

    Directory of Open Access Journals (Sweden)

    Deepu Thomas

    2014-01-01

    Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

  18. Influence of organoclay type on morphology of polymer films

    International Nuclear Information System (INIS)

    Gama, D.B.; Tavares, A.A.; Silva, D.F.A; Silva, S.M.L; Andrade, D.L.A.C.S.

    2011-01-01

    In this work, bentonite clay from Paraiba has been purified (removed organic matter) and then modified with the surfactants, cetyl trimethyl ammonium bromide (Cetremide) and hexadecyl tributyl phosphonium bromide (phosphonium) to obtain organoclays to be incorporated into polymer films. The clays were characterized by X-ray diffraction (XRD), thermogravimetry (TG) and infrared spectroscopy (FTIR) and films by X-ray diffraction (XRD). The results showed that the interplanar basal distance of the bentonite modified with salts, and phosphonium Cetremide, showed higher values than the natural bentonite, thus confirming the intercalation of organic cations between the clay galleries and thus to obtain organoclays and that the type of organoclay influence the morphology of the films obtained. (author)

  19. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Science.gov (United States)

    Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

    2017-08-01

    The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  20. Microstructure and morphology of SiOx film deposited by APCVD

    International Nuclear Information System (INIS)

    Zhang Jiliang; Li Jian; Luo Laima; Wo Yinhua

    2009-01-01

    A kind of silicon rich oxide (SiO x ) film deposited on aluminum substrate by atmospheric pressure chemical vapor deposition (APCVD) was reported. The morphology and microstructure of the film were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction (XRD) and transmission electron diffraction (TED). The deposition process is proposed to be a series of nucleation, growth and close stacking of non-uniform SiO x cells, which are stacked up by lots of SiO x laminae. A growth mechanism of the film according to the Stranski-Krastanov model is presented. In the growth process, the SiO x molecules incline to cluster like an island and merge into a layer and, then, form a laminar structure of SiO x cell. High resolution transmission electronic microscopy (TEM) picture shows that the film is basically amorphous with a little micro crystalline zone in it, which is certified by the XRD and TED results. The differences between this SiO x film and the common polycrystalline SiO 2 are also discussed in this paper

  1. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  2. Morphological and electrical study of gold ultrathin films on mica

    Energy Technology Data Exchange (ETDEWEB)

    Bahamondes, S.; Donoso, S. [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Blanco Encalada 2008, Santiago (Chile); Henríquez, R. [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Flores, M., E-mail: mflorescarra@ing.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Blanco Encalada 2008, Santiago (Chile)

    2013-12-02

    We present a topographical study of the formation of thin films of gold on muscovite mica. The characterization of the samples was done with scanning tunneling microscopy, atomic force microscopy as well as electric measurements. We performed our study on two groups of samples: first group of samples, evaporated at room temperature for thickness ranging from 1.5 up to 97 nm; second group of samples, for two different thicknesses of 3 nm and 50 nm evaporated at different substrate temperatures, between 110 and 530 K. The gold films show a Volmer–Weber growth. The complete films are obtained from samples with a nominal thickness of 8 nm deposited. The average grain diameter is constant, with nominal thicknesses of 18.5 nm, up to 8 nm and increases with the thickness for higher deposition. The average grain diameter is similar regardless of the temperature of the substrate for samples of 3 nm thickness, but changes for samples of 50 nm thickness. The resistivity is inversely dependent on nominal thickness and the mean free path is lineally dependent on nominal thickness. - Highlights: • We have grown thin gold films onto mica at different substrate temperatures. • We identified a continuous film at nominal thickness of 8 nm. • The grain size shows a direct dependence on the nominal film thickness. • The electron mean free path, at 4 K, is linearly dependent on nominal thickness.

  3. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ajaib [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Schipmann, Susanne [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Mathur, Aakash; Pal, Dipayan [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Sengupta, Amartya [Department of Physics, Indian Institute of Technology Delhi, Delhi 110016 (India); Klemradt, Uwe [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Chattopadhyay, Sudeshna, E-mail: sudeshna@iiti.ac.in [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Discipline of Physics, Indian Institute of Technology Indore, Indore 453552 (India); Centre for Biosciences and Biomedical Engineering, Indian Institute of Technology Indore, Indore 453552 (India)

    2017-08-31

    Highlights: • Ultra-thin ZnO films grown on confined polymeric (polystyrene, PS) template. • XRR and GISAXS explore the surface/interfaces structure and morphology of ZnO/PS. • Insights into the growth mechanism of magnetron sputtered ZnO thin film on PS template. • Nucleated disk-like cylindrical particles are the basis of the formation of ZnO layers. • Effect of ZnO film thickness on room temperature PL spectra in ZnO/PS systems. - Abstract: The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2R{sub g} film thickness, where R{sub g} ∼ 20 nm (R{sub g} is the unperturbed radius of gyration of polystyrene, defined by R{sub g} = 0.272 √M{sub 0}, and M{sub 0} is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2–7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  4. Molecular beam epitaxy growth of InSb1−xBix thin films

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Saha Roy, Ivy

    2013-01-01

    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

  5. Texture control and growth mechanism of WSe{sub 2} film prepared by rapid selenization of W film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou 341300 (China); Gao, Di; Li, Kun; Pang, Mengde; Xie, Senlin [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Liu, Rutie, E-mail: llrrtt@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Zou, Jianpeng [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

    2017-02-01

    Highlights: • We present a highly efficient method for preparing WSe{sub 2} film by rapid selenization. • The W film phase composition has little effect on WSe{sub 2} film orientation. • W film density is a critical factor that influences the WSe{sub 2} orientation. • A growth model was proposed for two kinds of WSe{sub 2} film textures. - Abstract: The tungsten diselenide (WSe{sub 2}) films with different orientation present unique properties suitable for specific applications, such as WSe{sub 2} with a C-axis⊥substrate for optoelectronics and WSe{sub 2} with a C-axis // substrate for electrocatalysts. Orientation control of WSe{sub 2} is essential for realizing the practical applications. In this letter, a WSe{sub 2} film has been prepared via rapid selenization of a magnetron-sputtered tungsten (W) film. The influence of the magnetron-sputtered W film on WSe{sub 2} film growth was studied systematically. Scanning electron microscopy, X-ray diffractometry and high-resolution transmission electron microscopy were used to evaluate the morphology, microstructure and phase composition of the W and WSe{sub 2} films. The substrate temperature has a significant effect on the W film phase composition, but little effect on the WSe{sub 2} film orientation. The WSe{sub 2} orientation can be controlled by changing the W film microstructure. A dense W film that is deposited at low pressure is conducive to the formation of WSe{sub 2} with a C-axis⊥substrate, whereas a porous W film deposited at high pressure favors the formation of WSe{sub 2} with a C-axis // substrate. A growth model for the WSe{sub 2} film with different texture has been proposed based on the experimental results. The direction of selenium (Se) vapor diffusion differs at the top and side surfaces. This is a key factor for the preparation of anisotropic WSe{sub 2} films. Highly oriented WSe{sub 2} films with a C-axis⊥substrate grow from the dense W film deposited at low pressure because Se vapor

  6. Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

    KAUST Repository

    Trinh, Cong

    2012-07-10

    We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz), forming a film composed of the metal-ligand complex. Fast and quantitative formation of the complex leads to marked changes in the morphology and optical properties of the film. X-ray diffraction studies show that the chemical annealing process converts amorphous ZnTPP films to crystalline ZnTPP•ligand films, whose porphryin planes lie nearly parallel to the substrate (average deviation is 8° for the ZnTPP•pz film). Organic solar cells were prepared with ZnTPP donor and C 60 acceptor layers. Devices were prepared with and without chemical annealing of the ZnTPP layer with a pyrazine ligand. The devices with chemically annealed ZnTPP donor layer show an increase in short-circuit current (J SC) and fill factor (FF) relative to analogous unannealed devices, presumably because of enhanced exciton diffusion length and improved charge conductivity. The open circuit voltages (V OC) of the chemically annealed devices are lower than their unannealed counterpart because of enhanced polaron pair recombination at the donor/acceptor heterojunction. A net improvement of 5-20% in efficiency has been achieved, after chemical annealing of ZnTPP films with pyrazine. © 2012 American Chemical Society.

  7. Effect of mass density on surface morphology of electrodeposited manganese oxide films

    Science.gov (United States)

    Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2018-05-01

    This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

  8. Controlling thin film structure for the dewetting of catalyst nanoparticle arrays for subsequent carbon nanofiber growth

    International Nuclear Information System (INIS)

    Randolph, S J; Fowlkes, J D; Melechko, A V; Klein, K L; III, H M Meyer; Simpson, M L; Rack, P D

    2007-01-01

    Vertically aligned carbon nanofiber (CNF) growth is a catalytic chemical vapor deposition process in which structure and functionality is controlled by the plasma conditions and the properties of the catalyst nanoparticles that template the fiber growth. We have found that the resultant catalyst nanoparticle network that forms by the dewetting of a continuous catalyst thin film is dependent on the initial properties of the thin film. Here we report the ability to tailor the crystallographic texture and composition of the nickel catalyst film and subsequently the nanoparticle template by varying the rf magnetron sputter deposition conditions. After sputtering the Ni catalyst thin films, the films are heated and exposed to an ammonia dc plasma, to chemically reduce the native oxide on the films and induce dewetting of the film to form nanoparticles. Subsequent nanoparticle treatment in an acetylene plasma at high substrate temperature results in CNF growth. Evidence is presented that the texture and composition of the nickel thin film has a significant impact on the structure and composition of the formed nanoparticle, as well as the resultant CNF morphology. Nickel films with a preferred (111) or (100) texture were produced and conditions favoring interfacial silicidation reactions were identified and investigated. Both compositional and structural analysis of the films and nanoparticles indicate that the properties of the as-deposited Ni catalyst film influences the subsequent nanoparticle formation and ultimately the catalytic growth of the carbon nanofibers

  9. Growth Mechanism of Cluster-Assembled Surfaces: From Submonolayer to Thin-Film Regime

    Science.gov (United States)

    Borghi, Francesca; Podestà, Alessandro; Piazzoni, Claudio; Milani, Paolo

    2018-04-01

    Nanostructured films obtained by assembling preformed atomic clusters are of strategic importance for a wide variety of applications. The deposition of clusters produced in the gas phase onto a substrate offers the possibility to control and engineer the structural and functional properties of the cluster-assembled films. To date, the microscopic mechanisms underlying the growth and structuring of cluster-assembled films are poorly understood, and, in particular, the transition from the submonolayer to the thin-film regime is experimentally unexplored. Here we report the systematic characterization by atomic force microscopy of the evolution of the structural properties of cluster-assembled films deposited by supersonic cluster beam deposition. As a paradigm of nanostructured systems, we focus our attention on cluster-assembled zirconia films, investigating the influence of the building block dimensions on the growth mechanisms and roughening of the thin films, following the growth process from the early stages of the submonolayer to the thin-film regime. Our results demonstrate that the growth dynamics in the submonolayer regime determines different morphological properties of the cluster-assembled thin film. The evolution of the roughness with the number of deposited clusters reproduces the growth exponent of the ballistic deposition in the 2 +1 model from the submonolayer to the thin-film regime.

  10. Effects of film polarities on InN growth by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Xu, K.; Yoshikawa, A.

    2003-01-01

    Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

  11. Growth morphology of zinc tris(thiourea) sulphate crystals

    Indian Academy of Sciences (India)

    The growth morphology of crystals of zinc tris(thiourea) sulphate (ZTS) is investigated experimentally, and computed using the Hartman–Perdok approach. Attachment energies of the observed habit faces are calculated for determining their relative morphological importance. A computer code is developed for carrying out ...

  12. Influence of growth parameters on the surface morphology and ...

    Indian Academy of Sciences (India)

    Unknown

    surface features of the grown film like terracing, inclusions, meniscus lines, etc are ... Recently, studies carried out on the growth of InSb ..... is a critical factor in any epitaxial growth process and can ... However, this approach can lead to.

  13. Morphological Characteristics of Au Films Deposited on Ti: A Combined SEM-AFM Study

    Directory of Open Access Journals (Sweden)

    Francesco Ruffino

    2018-03-01

    Full Text Available Deposited Au films and coatings are, nowadays, routinely used as active or passive elements in several innovative electronic, optoelectronic, sensing, and energy devices. In these devices, the physical properties of the Au films are strongly determined by the films nanoscale structure. In addition, in these devices, often, a layer of Ti is employed to promote adhesion and, so, influencing the nanoscale structure of the deposited Au film. In this work, we present experimental analysis on the nanoscale cross-section and surface morphology of Au films deposited on Ti. In particular, we sputter-deposited thick (>100 nm thickness Au films on Ti foils and we used Scanning Electron Microscopy to analyze the films cross-sectional and surface morphology as a function of the Au film thickness and deposition angle. In addition, we analyzed the Au films surface morphology by Atomic Force Microscopy which allowed quantifying the films surface roughness versus the film thickness and deposition angle. The results establish a relation between the Au films cross-sectional and surface morphologies and surface roughness to the film thickness and deposition angle. These results allow setting a general working framework to obtain Au films on Ti with specific morphological and topographic properties for desired applications in which the Ti adhesion layer is needed for Au.

  14. Structure, morphology and optical properties of CuInS2 thin films prepared by modulated flux deposition

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.; Gutierrez, M.T.; Briones, F.

    2005-01-01

    The structure, morphology and optical properties of copper indium sulfide thin films prepared by a novel modulated flux deposition procedure have been investigated for layers from 200 to 400 nm thickness. These polycrystalline CuInS 2 films grown onto glass substrates showed CuAu-like structure, similar to epitaxial CuInS 2 films grown onto monocrystalline substrates, and direct band gap values Eg=1.52-1.55 eV, optimum for single-junction photovoltaic applications. The increase in the layer thickness leads to growth of the average crystallite size and increases slightly the surface roughness and the absorption coefficient

  15. Effect of bath temperature on structure, morphology and thermoelectric properties of CoSb{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Suchitra, E-mail: suchitrayadav87@gmail.com; Pandya, Dinesh K.; Chaudhary, Sujeet [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

    2016-05-23

    CoSb{sub 3} thin films are deposited on conducting glass substrates (FTO) by electrodeposition at different bath temperatures (60°C, 70°C and 80°C) and the resulting influence of the bath temperature on the structure, morphology and electrical properties of films is investigated. X-ray diffraction confirms the formation of CoSb{sub 3} phase in the films. Scanning electron microscopy reveals that different morphologies ranging from branched nano-flakes to nano-needles evolve as bath temperature increases. It is concluded that a growth temperature of 80°C is suitable for producing CoSb{sub 3} films with such properties that show potential feasibility for thermoelectric applications.

  16. Monolayer-Mediated Growth of Organic Semiconductor Films with Improved Device Performance.

    Science.gov (United States)

    Huang, Lizhen; Hu, Xiaorong; Chi, Lifeng

    2015-09-15

    Increased interest in wearable and smart electronics is driving numerous research works on organic electronics. The control of film growth and patterning is of great importance when targeting high-performance organic semiconductor devices. In this Feature Article, we summarize our recent work focusing on the growth, crystallization, and device operation of organic semiconductors intermediated by ultrathin organic films (in most cases, only a monolayer). The site-selective growth, modified crystallization and morphology, and improved device performance of organic semiconductor films are demonstrated with the help of the inducing layers, including patterned and uniform Langmuir-Blodgett monolayers, crystalline ultrathin organic films, and self-assembled polymer brush films. The introduction of the inducing layers could dramatically change the diffusion of the organic semiconductors on the surface and the interactions between the active layer with the inducing layer, leading to improved aggregation/crystallization behavior and device performance.

  17. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Hyeonju Lee

    2016-10-01

    Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

  18. Thin-film growth and the shadow instability

    International Nuclear Information System (INIS)

    Karunasiri, R.P.U.; Bruinsma, R.; Rudnick, J.

    1989-01-01

    We propose a growth model for deposition of thin amorphous films by the sputtering technique. For small values of the diffusion constant, the film develops a self-similar mountain landscape. As the diffusion constant is increased a regime is reached where growth of compact flat films is possible up to a critical height. Further deposition leads to surface roughening

  19. Microstructure and surface morphology of YSZ thin films deposited by e-beam technique

    International Nuclear Information System (INIS)

    Laukaitis, G.; Dudonis, J.; Milcius, D.

    2008-01-01

    In present study yttrium-stabilized zirconia (YSZ) thin films were deposited on optical quartz (amorphous SiO 2 ), porous Ni-YSZ and crystalline Alloy 600 (Fe-Ni-Cr) substrates using e-beam deposition technique and controlling technological parameters: substrate temperature and electron gun power which influence thin-film deposition mechanism. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin-film structure and surface morphology depend on these parameters. It was found that the crystallite size, roughness and growth mechanism of YSZ thin films are influenced by electron gun power. To clarify the experimental results, YSZ thin-film formation as well evolution of surface roughness at its initial growing stages were analyzed. The evolution of surface roughness could be explained by the processes of surface mobility of adatoms and coalescence of islands. The analysis of these experimental results explain that surface roughness dependence on substrate temperature and electron gun power non-monotonous which could result from diffusivity of adatoms and the amount of atomic clusters in the gas stream of evaporated material

  20. The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films

    Science.gov (United States)

    Ren, Jianjun; Zuo, Yu

    2012-11-01

    The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films were studied. The voltage-time response for galvanostatic anodization of aluminum in malonic acid solution exhibits a conventional three-stage feature but the formation voltage is much higher. With the increase of electrolyte concentration, the electrolyte viscosity increases simultaneously and the high viscosity decreases the film growth rate. With the concentration increase of the malonic acid electrolyte, the critical current density that initiates local "burning" on the sample surface decreases. For malonic acid anodization, the field-assisted dissolution on the oxide surface is relatively weak and the nucleation of pores is more difficult, which results in greater barrier layer thickness and larger cell dimension. The embryo of the porous structure of anodic film has been created within the linear region of the first transient stage, and the definite porous structure has been established before the end of the first transient stage. The self-ordering behavior of the porous film is influenced by the electrolyte concentration, film thickness and the applied current density. Great current density not only improves the cell arrangement order but also brings about larger cell dimension.

  1. Coarsening and pattern formation during true morphological phase separation in unstable thin films under gravity

    Science.gov (United States)

    Kumar, Avanish; Narayanam, Chaitanya; Khanna, Rajesh; Puri, Sanjay

    2017-12-01

    We address in detail the problem of true morphological phase separation (MPS) in three-dimensional or (2 +1 )-dimensional unstable thin liquid films (>100 nm) under the influence of gravity. The free-energy functionals of these films are asymmetric and show two points of common tangency, which facilitates the formation of two equilibrium phases. Three distinct patterns formed by relative preponderance of these phases are clearly identified in "true MPS". Asymmetricity induces two different pathways of pattern formation, viz., defect and direct pathway for true MPS. The pattern formation and phase-ordering dynamics have been studied using statistical measures such as structure factor, correlation function, and growth laws. In the late stage of coarsening, the system reaches into a scaling regime for both pathways, and the characteristic domain size follows the Lifshitz-Slyozov growth law [L (t ) ˜t1 /3] . However, for the defect pathway, there is a crossover of domain growth behavior from L (t ) ˜t1 /4→t1 /3 in the dynamical scaling regime. We also underline the analogies and differences behind the mechanisms of MPS and true MPS in thin liquid films and generic spinodal phase separation in binary mixtures.

  2. Craniofacial morphology in Turner syndrome patients treated with growth hormone

    Directory of Open Access Journals (Sweden)

    Jovana Julsoki

    2015-05-01

    Full Text Available ABSTRACT Introduction: In addition to well-established physical characteristics, Turner syndrome patients have distinct craniofacial morphology. Since short stature is the most typical characteristic, Turner syndrome patients are commonly treated with growth hormone in order to increase final height. At the same time, growth hormone treatment was found to influence craniofacial growth and morphology in various groups of treated patients. Whereas craniofacial characteristics of Turner syndrome patients are well documented, comparatively little is known of craniofacial morphology of those who are treated with growth hormone. Aim: The aim of this study was to investigate craniofacial morphology in Turner syndrome patients treated with growth hormone in comparison to healthy females. Materials and methods: The cephalometric evaluation was conducted on twenty lateral cephalograms of Turner syndrome patients (13.53 ± 4.04 years treated with growth hormone for at least one year (4.94 ± 1.92 years in average. As a control group, forty lateral cephalograms of healthy female controls, who matched Turner syndrome patients by chronological (11.80 ± 2.37 years and skeletal age, were used. Eleven angular, seven linear measurements and six dimensional ratios were measured to describe craniofacial morphology. Results: The results obtained for angular measurements, in cephalometric analyses for Turner syndrome patients treated with growth hormone, revealed bimaxillary retrognathism. The linear measurements indicated longer mandibular ramus, anterior cranial base and both anterior and posterior facial heights. However, posterior cranial base and maxilla were in proportion to the anterior cranial base, when comparing dimensional ratios. Anterior cranial base, maxilla and mandibular ramus were larger in proportion to mandibular body; as well as posterior facial height was when compared to anterior facial height. Turner syndrome patients treated with growth

  3. Solvent-vapor-assisted dewetting of prepatterned thin polymer films: control of morphology, order, and pattern miniaturization.

    Science.gov (United States)

    Bhandaru, Nandini; Goohpattader, Partho Sarathi; Faruqui, Danish; Mukherjee, Rabibrata; Sharma, Ashutosh

    2015-03-17

    Ultrathin (dewet by the growth of surface instability, the wavelength (λ) of which depends on the film thickness (h(f)). While the dewetting of a flat polymer thin film results in random structures, we show that the dewetting of a prepatterned film results in myriad ordered mesoscale morphologies under specific conditions. Such a film undergoes rupture over the thinnest parts when the initial local thickness of these zones (h(rm)) is lower than a limiting thickness h(lim) ≈ 10 nm. Additionally, the width of the pattern grooves (l(s)) must be wider than λ(s) corresponding to a flat film having a thickness of h(rm) for pattern-directed dewetting to take place over surface-tension-induced flattening. We first present an experimentally obtained morphology phase diagram that captures the conditions where a transition from surface-tension-induced flattening to pattern-directed-rupture takes place. Subsequently, we show the versatility of this technique in achieving a variety of aligned mesopatterns starting from a prepatterned film with simple grating geometry. The morphology of the evolving patterns depends on several parameters such as the initial film thickness (h(f)), prepattern amplitude (h(st)), duration of solvent vapor exposure (SVE), and wettability of the stamp used for patterning. Periodic rupture of the film at regular intervals imposes directionality on the evolving patterns, resulting in isolated long threads/cylindrical ridges of polymers, which subsequently disintegrate into an aligned array of droplets due to Rayleigh-Plateau instability under specific conditions. Other patterns such as a double periodic array of droplets and an array of holes are also possible to obtain. The evolution can be interrupted at any intermediate stage by terminating the solvent vapor annealing, allowing the creation of pattern morphology on demand. The created patterns are significantly miniaturized in size as compared to features obtained from dewetting a flat film with

  4. Understanding the effects of strain on morphological instabilities of a nanoscale island during heteroepitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Lu; Wang, Jing; Wang, Shibin; Li, Linan; Shen, Min; Wang, Zhiyong; Chen, Zhenfei; Zhao, Yang [Tianjin Key Laboratory of Modern Engineering Mechanics, Tianjin 300072 (China); Department of Mechanics, Tianjin University, Tianjin 300072 (China)

    2015-07-21

    A comprehensive morphological stability analysis of a nanoscale circular island during heteroepitaxial growth is presented based on continuum elasticity theory. The interplay between kinetic and thermodynamic mechanisms is revealed by including strain-related kinetic processes. In the kinetic regime, the Burton-Cabrera-Frank model is adopted to describe the growth front of the island. Together with kinetic boundary conditions, various kinetic processes including deposition flow, adatom diffusion, attachment-detachment kinetics, and the Ehrlich-Schwoebel barrier can be taken into account at the same time. In the thermodynamic regime, line tension, surface energy, and elastic energy are considered. As the strain relief in the early stages of heteroepitaxy is more complicated than commonly suggested by simple consideration of lattice mismatch, we also investigate the effects of external applied strain and elastic response due to perturbations on the island shape evolution. The analytical expressions for elastic fields induced by mismatch strain, external applied strain, and relaxation strain are presented. A systematic approach is developed to solve the system via a perturbation analysis which yields the conditions of film morphological instabilities. Consistent with previous experimental and theoretical work, parametric studies show the kinetic evolution of elastic relaxation, island morphology, and film composition under various conditions. Our present work offers an effective theoretical approach to get a comprehensive understanding of the interplay between different growth mechanisms and how to tailor the growth mode by controlling the nature of the crucial factors.

  5. Physical phenomena stipulating nucleus formation, growth and structure films

    Energy Technology Data Exchange (ETDEWEB)

    Aleksandrov, L N [AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

    1975-03-01

    This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.

  6. Direct growth of superconducting NdFeAs(O,F) thin films by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Chihara, Masashi, E-mail: chihara@iku.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Sumiya, Naoki; Arai, Kenta [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, Yokosuka-shi, Kanagawa 240-0101 (Japan); Hatano, Takafumi; Iida, Kazumasa; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-11-15

    Highlights: • Highly textured NdFeAs(O,F) thin films were obtained by a direct growth method. • Enhancing the migration was crucial to realize the direct growth. • The critical current density exceeded 3 MA/cm{sup 2} at self-field and 1 MA/cm{sup 2} at 9 T. • A two-dimensional growth was confirmed by the observation of surface morphology. - Abstract: We report on the growth of NdFeAs(O,F) superconducting thin films by molecular beam epitaxy without having a NdOF secondary layer that was necessary for fluorine doping in our previous studies. The key to realizing the direct growth of a superconducting film was the enhancement of migration of the raw materials on the substrate, which was accomplished by two steps. Firstly, we increased the growth temperature that improved the crystalline quality of parent NdFeAsO thin films. Secondly, the atmosphere in the chamber during the growth was improved by changing the crucible material of the Fe source cell. Highly textured NdFeAs(O,F) thin films with critical temperatures up to 50 K were obtained, and terraces were observed by atomic force microscope, indicating a two-dimensional growth. However, precipitates were also found on the surface, which suggests that enhancing further the migration is necessary for obtaining a NdFeAs(O,F) thin film with a better quality.

  7. Novel multiform morphologies of hydroxyapatite: Synthesis and growth mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Mary, I. Reeta [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India); Department of Physics, Government Arts College, Coimbatore 641018 (India); Sonia, S.; Viji, S.; Mangalaraj, D.; Viswanathan, C. [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India); Ponpandian, N., E-mail: ponpandian@buc.edu.in [Department of Nanoscience and Technology, Bharathiar University, Coimbatore 641046 (India)

    2016-01-15

    Graphical abstract: - Highlights: • Novel multiform morphologies of hydroxyapatite from nanoscale building blocks. • Facile hydro/solvothermal method under mild reaction conditions without the necessity of post-annealing treatment. • Growth mechanism by Ostwald ripening and self-assembly processes. - Abstract: Morphological evolution of materials becomes a prodigious challenge due to their key role in defining their functional properties and desired applications. Herein, we report the synthesis of hydroxyapatite (HAp) microstructures with multiform morphologies, such as spheres, cubes, hexagonal rods and nested bundles constructed from their respective nanoscale building blocks via a simple cost effective hydro/solvothermal method. A possible formation mechanism of diverse morphologies of HAp has been presented. Structural analysis based on X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy confirms the purity of the HAp microstructures. The multiform morphologies of HAp were corroborated by using Field emission scanning electron microscope (FESEM).

  8. Morphology modulating the wettability of a diamond film.

    Science.gov (United States)

    Tian, Shibing; Sun, Weijie; Hu, Zhaosheng; Quan, Baogang; Xia, Xiaoxiang; Li, Yunlong; Han, Dong; Li, Junjie; Gu, Changzhi

    2014-10-28

    Control of the wetting property of diamond surface has been a challenge because of its maximal hardness and good chemical inertness. In this work, the micro/nanoarray structures etched into diamond film surfaces by a maskless plasma method are shown to fix a surface's wettability characteristics, and this means that the change in morphology is able to modulate the wettability of a diamond film from weakly hydrophilic to either superhydrophilic or superhydrophobic. It can be seen that the etched diamond surface with a mushroom-shaped array is superhydrophobic following the Cassie mode, whereas the etched surface with nanocone arrays is superhydrophilic in accordance with the hemiwicking mechnism. In addition, the difference in cone densities of superhydrophilic nanocone surfaces has a significant effect on water spreading, which is mainly derived from different driving forces. This low-cost and convenient means of altering the wetting properties of diamond surfaces can be further applied to underlying wetting phenomena and expand the applications of diamond in various fields.

  9. Novel morphology of chemical vapor deposited diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Tang, C.J. [I3N and Department of Physics, University of Aveiro (Portugal); Jiangsu Key Laboratory for Advanced Functional Materials and Department of Physics, Changshu Institute of Technology, Changshu (China); TEMA and Department of Mechanical Engineering, University of Aveiro (Portugal); Fernandes, A.J.S.; Abe, I.; Pinto, J.L. [I3N and Department of Physics, University of Aveiro (Portugal); Gracio, J. [TEMA and Department of Mechanical Engineering, University of Aveiro (Portugal); Buijnsters, J.G. [Institute for Molecules and Materials (IMM), Radboud University Nijmegen (Netherlands)

    2010-04-15

    We have obtained simultaneously nanocrystalline and {l_brace}100{r_brace} faceted large-grained polycrystalline diamond films not only on different substrates but also on the same substrate in only one deposition run using a novel approach for substrate arrangement. Furthermore, interesting unusual morphologies and microstructures composed by non-faceted nanostructures and terminated with large smooth {l_brace}100{r_brace} facet-like belt are found near the edges of the top square sample. The morphology variation is likely caused by the so called edge effect, where a strong variation in temperature is also present. We have modelled the temperature distribution on the substrates by computer simulations using the finite element method. The novel feature, namely the coexistence of oval non-faceted nanocrystalline diamond grains and large smooth {l_brace}100{r_brace} facet-like belt in one diamond grain, is in the transition from {l_brace}100{r_brace} faceted polycrystalline diamond to cauliflower-like nanocrystalline diamond. The formation mechanism is discussed based on the temperature analysis and other simulation results described in the literature. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Growth and characterization of Hg 1– Cd Te epitaxial films by ...

    Indian Academy of Sciences (India)

    Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

  11. Growth and characterization of Hg1–xCdxTe epitaxial films by ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Growth of Hg1–xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy. (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication.

  12. Growth and Morphology of Rod Eutectics

    Energy Technology Data Exchange (ETDEWEB)

    Jing Teng; Shan Liu; R. Trivedi

    2008-03-17

    The formation of rod eutectic microstructure is investigated systematically in a succinonitrile-camphor alloy of eutectic composition by using the directional solidification technique. A new rod eutectic configuration is observed in which the rods form with elliptical cylindrical shape. Two different orientations of the ellipse are observed that differ by a 90{sup o} rotation such that the major and the minor axes are interchanged. Critical experiments in thin samples, where a single layer of rods forms, show that the spacing and orientation of the elliptic rods are governed by the growth rate and the sample thickness. In thicker samples, multi layers of rods form with circular cross-section and the scaling law between the spacing and velocity predicted by the Jackson and Hunt model is validated. A theoretical model is developed for a two-dimensional array of elliptical rods that are arranged in a hexagonal or a square array, and the results are shown to be consistent with the experimental observations. The model of elliptic rods is also shown to reduce to that for the circular rod eutectic when the lengths of the two axes are equal, and to the lamellar eutectic model when one of the axes is much larger than the other one.

  13. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  14. Centimetre-scale micropore alignment in oriented polycrystalline metal-organic framework films via heteroepitaxial growth.

    Science.gov (United States)

    Falcaro, Paolo; Okada, Kenji; Hara, Takaaki; Ikigaki, Ken; Tokudome, Yasuaki; Thornton, Aaron W; Hill, Anita J; Williams, Timothy; Doonan, Christian; Takahashi, Masahide

    2017-03-01

    The fabrication of oriented, crystalline films of metal-organic frameworks (MOFs) is a critical step toward their application to advanced technologies such as optics, microelectronics, microfluidics and sensing. However, the direct synthesis of MOF films with controlled crystalline orientation remains a significant challenge. Here we report a one-step approach, carried out under mild conditions, that exploits heteroepitaxial growth for the rapid fabrication of oriented polycrystalline MOF films on the centimetre scale. Our methodology employs crystalline copper hydroxide as a substrate and yields MOF films with oriented pore channels on scales that primarily depend on the dimensions of the substrate. To demonstrate that an anisotropic crystalline morphology can translate to a functional property, we assembled a centimetre-scale MOF film in the presence of a dye and showed that the optical response could be switched 'ON' or 'OFF' by simply rotating the film.

  15. Effect of yoghurt waste on gut morphology and growth performance ...

    African Journals Online (AJOL)

    The experiment was carried out to determine the effect of yoghurt waste on intestinal morphology and growth performance of pigs weaned at 7 weeks of age. A total of 20 weaned pigs (15.6 ± 2kg, initial body weight {BW}) were randomly assigned in groups of four, to 5 experimental treatments in a randomized block design.

  16. Growth, yield and fiber morphology of kenaf ( Hibiscus cannabinus L ...

    African Journals Online (AJOL)

    The effects of carbon levels on plant growth, yield and fiber morphological properties are not available for kenaf that is considered as a potential source of low cost natural fiber and feedstock for energy production as well. A pot-culture experiment was conducted in shade house to determine the effects of carbon levels on ...

  17. On the structure, morphology, and optical properties of chemical bath deposited Sb2S3 thin films

    International Nuclear Information System (INIS)

    Krishnan, B.; Arato, A.; Cardenas, E.; Roy, T.K. Das; Castillo, G.A.

    2008-01-01

    In the present paper, we have reported the room temperature growth of antimony sulphide (Sb 2 S 3 ) thin films by chemical bath deposition and detailed characterization of these films. The films were deposited from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 at 27 deg. C. We have analysed the structure, morphology, composition and optical properties of as deposited Sb 2 S 3 films as well as those subjected to annealing in nitrogen atmosphere or in air. As-deposited films are amorphous to X-ray diffraction (XRD). However, the diffused rings in the electron diffraction pattern revealed the existence of nanocrystalline grains in these films. XRD analysis showed that upon annealing in nitrogen atmosphere these films transformed into polycrystalline with orthorhombic structure. Also, we have observed that during heating in air, Sb 2 S 3 first converts into orthorhombic form and then further heating results in the formation of Sb 2 O 3 crystallites. Optical bandgap energy of as deposited and annealed films was evaluated from UV-vis absorption spectra. The values obtained were 2.57 and 1.73 eV for the as-deposited and the annealed films respectively

  18. Influence of copper morphology in forming nucleation seeds for graphene growth.

    Science.gov (United States)

    Han, Gang Hee; Güneş, Fethullah; Bae, Jung Jun; Kim, Eun Sung; Chae, Seung Jin; Shin, Hyeon-Jin; Choi, Jae-Young; Pribat, Didier; Lee, Young Hee

    2011-10-12

    We report that highly crystalline graphene can be obtained from well-controlled surface morphology of the copper substrate. Flat copper surface was prepared by using a chemical mechanical polishing method. At early growth stage, the density of graphene nucleation seeds from polished Cu film was much lower and the domain sizes of graphene flakes were larger than those from unpolished Cu film. At later growth stage, these domains were stitched together to form monolayer graphene, where the orientation of each domain crystal was unexpectedly not much different from each other. We also found that grain boundaries and intentionally formed scratched area play an important role for nucleation seeds. Although the best monolayer graphene was grown from polished Cu with a low sheet resistance of 260 Ω/sq, a small portion of multilayers were also formed near the impurity particles or locally protruded parts.

  19. Modeling of metal thin film growth: Linking angstrom-scale molecular dynamics results to micron-scale film topographies

    Science.gov (United States)

    Hansen, U.; Rodgers, S.; Jensen, K. F.

    2000-07-01

    A general method for modeling ionized physical vapor deposition is presented. As an example, the method is applied to growth of an aluminum film in the presence of an ionized argon flux. Molecular dynamics techniques are used to examine the surface adsorption, reflection, and sputter reactions taking place during ionized physical vapor deposition. We predict their relative probabilities and discuss their dependence on energy and incident angle. Subsequently, we combine the information obtained from molecular dynamics with a line of sight transport model in a two-dimensional feature, incorporating all effects of reemission and resputtering. This provides a complete growth rate model that allows inclusion of energy- and angular-dependent reaction rates. Finally, a level-set approach is used to describe the morphology of the growing film. We thus arrive at a computationally highly efficient and accurate scheme to model the growth of thin films. We demonstrate the capabilities of the model predicting the major differences on Al film topographies between conventional and ionized sputter deposition techniques studying thin film growth under ionized physical vapor deposition conditions with different Ar fluxes.

  20. Synthesis and morphological modification of semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Valente, Jaime S., E-mail: jsanchez@imp.mx [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); López-Salinas, Esteban [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico); Prince, Julia [Universidad Anáhuac México Norte, Av. Universidad Anáhuac # 46, Huixquilucan, Edo. de México 52786 (Mexico); González, Ignacio; Acevedo-Peña, Prospero [Universidad Autónoma Metropolitana-Iztapalapa, Departamento de Química, Apdo. Postal 55-534, 09340 México D.F. (Mexico); Ángel, Paz del [Instituto Mexicano del Petróleo, Eje Central # 152, 07730 México D.F. (Mexico)

    2014-09-15

    Layered double hydroxide (LDH) thin films with different chemical compositions (MgZnAl, MgZnGa, MgGaAl) and varying thicknesses were easily prepared by sol–gel method followed by dip-coating. Films were chemically uniform, transparent and well adhered to a conductive indium tin oxide (ITO) substrate. Structure, chemical composition and morphology of the thin films were characterized by XRD-GADDS, SEM-EDS and AFM. Additionally, the semiconducting properties of all the prepared films were studied through the Mott–Schottky relationship; such properties were closely related to the chemical compositions of the film. The films were characterized after electrochemical treatment and important modifications regarding surface morphology, particle and crystal sizes were observed. An in-depth study was conducted in order to investigate the effect of several different electrochemical treatments on the morphology, particle size distribution and crystal size of LDH thin films. Upon electrochemical treatment, the films' surface became smooth and the particles forming the films were transformed from flaky open LDH platelets to uniformly distributed close-packed LDH nanoparticles. - Highlights: • Semiconducting Mg(Zn)Al(Ga)–LDH/ITO thin films prepared by sol–gel. • LDH thin films show a turbostratic morphology made up of porous flakes. • Electrochemical treatments change the flaky structure into a nanoparticle array.

  1. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  2. Influence of substrate temperature on structural, morphological and electrical properties of PbSe film deposited by radio frequency sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wenran, E-mail: fengwenran@bipt.edu.cn [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China); Wang, Xiaoyang [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Chen, Fei [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China); Liu, Wan [College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Zhou, Hai; Wang, Shuo; Li, Haoran [College of Materials Science and Engineering, Beijing Institute of Petrochemical Technology, Beijing 102617 (China); Beijing Key Lab of Special Elastomer Composite Materials, Beijing 102617 (China)

    2015-03-02

    PbSe films were prepared by radio frequency magnetron sputtering from PbSe slices target under different substrate temperatures (from room temperature to 300 °C). The effect of substrate temperature on structural properties of PbSe thin film was investigated. The surface morphology and the crystal structure of film were determined using field emission scanning electron microscopy and X-ray diffractometry, respectively. It was found that the grain shape changed with substrate temperature. When the substrate temperature was below 250 °C, most of the crystal grains were spherical in shape. For temperatures above 250 °C, the grains transformed to triangle or prismatic ones. Meanwhile, with increasing substrate temperature, the preferential orientation of the film changed from (200) to (220). To figure out the intrinsic mechanisms for this behavior, the texture coefficient, as well as the comparison between surface energy and elastic strain energy was performed. At lower temperature, the film growth was determined by surface energy, which was replaced by strain energy at higher temperature. Therefore, the diversity of crystal structure and morphology of the films at different substrate temperatures occurred. Moreover, the electrical properties of the p-type PbSe films are also quite dependent on substrate temperature. With substrate temperature increased, the electrical resistivity decreased from 1.88 to 0.14 Ω cm, while the carrier concentration increased from 1.74 × 10{sup 18} to 4.08 × 10{sup 19} cm{sup −3} as the mobility was enhanced from 0.54 to 2.21 cm{sup 2}/Vs. - Highlights: • PbSe thin films were deposited by radio frequency magnetron sputtering. • Substrate temperature determines crystal structure of PbSe films. • Transformation behaviors of PbSe films were explained by energy calculations.

  3. Controlling the nanoscale morphology of organic films deposited by polyatomic ions

    CERN Document Server

    Hanley, L; Fuoco, E R; Ahu-Akin, F; Wijesundara, M B J; Li, Maozhen; Tikhonov, A; Schlossman, M

    2003-01-01

    Hyperthermal polyatomic ion beams can be used to fabricate thin film nanostructures with controlled morphology. Several experiments are described in which mass-selected and non-mass-selected polyatomic ion beams are used to create nanometer thick films with controlled surface and buried interface morphologies. Fluorocarbon and thiophenic films are grown on silicon wafers and/or polystyrene from 5 to 200 eV C sub 3 F sub 5 sup + or C sub 4 H sub 4 S sup + ions, respectively. X-ray photoelectron spectroscopy, atomic force microscopy, X-ray reflectivity, and scanning electron microscopy are utilized to analyze the morphology and chemistry of these films. Polyatomic ions are found to control film morphology on the nanoscale through variation of the incident ion energy, ion structure and/or substrate.

  4. Surface Morphology Diagram for Cylinder-Forming Block Copolymer Thin Films

    International Nuclear Information System (INIS)

    Zhang, Xiaohua; Berry, Brian C.; Yager, Kevin G.; Kim, Sangcheol; Jones, Ronald L.; Satija, Sushil; Pickel, Deanna L.; Douglas, Jack F.; Karim, Alamgir

    2008-01-01

    We investigate the effect of annealing temperature (T), film thickness (hf) on the surface morphology of flow coated films of a cylinder forming block copolymer, poly (styrene-block-methyl methacrylate) (PS-b-PMMA). Surface morphology transitions from a perpendicular to a parallel cylinder orientation with respect to the substrate with increasing hf are observed in these model 'frustrated-interaction' films where the substrate interaction is preferential for one of the blocks (PMMA) and nearly neutral for the other interface (polymer-air). In these films a transition occurs from cylinders oriented parallel to the substrate to a mixed or 'hybrid' state where the two orientations coexist followed by a transition to cylinders oriented perpendicularly to the polymer-air interface for larger hf. The characteristic values of hf defining these surface morphological transitions depend on T and we construct a surface morphology diagram as a function of hf and T. The surface morphology diagram is found to depend on the method of film formation (flow coated versus spun cast films) so non-equilibrium effects evidently have a large effect on the surface pattern morphology. In particular, the residual solvent within the film (quantified by neutron reflectivity measurements) in the context of physics of glass-formation can have a large effect on the surface morphology diagram

  5. Thin film growth studies using time-resolved x-ray scattering

    Science.gov (United States)

    Kowarik, Stefan

    2017-02-01

    Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

  6. Hydrothermal growth of ZnO nanorods: The role of KCl in controlling rod morphology

    International Nuclear Information System (INIS)

    Downing, Jonathan M.; Ryan, Mary P.; McLachlan, Martyn A.

    2013-01-01

    The role of potassium chloride (KCl) in controlling ZnO nanorod morphology of large area thin films prepared by hydrothermal growth has been extensively investigated. The influence of KCl and growth time on the orientation, morphology and microstructure of the nanorod arrays has been studied with systematic changes in the length, width, density and termination of the nanorods observed. Such changes are attributed to stabilization of the high-energy (002) nanorod surface by the KCl. At low KCl concentrations (< 100 mM) c-axis growth i.e. perpendicular to the polar surface, dominates, leading to nanorods with increased length over the control sample (0 mM KCl). At higher concentrations (> 100 mM) stabilization of the high-energy surface by KCl occurs and planar (002) facets are observed accompanied by increased lateral (100) growth, at the highest KCl concentrations near coalesced (002) terminated rods are observed. Additionally we correlate the KCl concentration with the uniformity of the nanorod arrays; a decrease in polydispersity with increased KCl concentration is observed. The vertical alignment of nanorod arrays was studied using X-ray diffraction, it was found that this parameter increases as growth time and KCl concentration are increased. We propose that the increase in vertical alignment is a result of nanorod–nanorod interactions during the early stages of growth. - Highlights: • Modified hydrothermal growth was used for controlled ZnO nanorod synthesis. • Growth conditions varied to study influence on nanorod morphology and orientation. • A highly controlled and reproducible method is established. • A mechanism for growth and the role of ionic additives is proposed

  7. The growth of large-area superconducting YBa2Cu3O7-x thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lai, H.C.; Chang, C.M.; Lin, R.J.; Liu, R.S.

    1996-01-01

    In-situ growth of 2-in. diameter superconducting YBa 2 Cu 3 O 7-x (YBCO) thin films using an excimer KrF pulsed laser has been studied. Films with critical transition temperature (T c,0 ) of 89±1 K and critical current density (J c,77K ) in excess of 1 x 10 6 A cm -2 have been prepared routinely. Uniformity in film thickness of below ±15% and film composition of ±5% have been measured. The effects of gas nozzle geometry and target evolution during ablation on the superconducting properties and surface morphology of YBCO thin films have also been investigated. (orig.)

  8. Characteristics of the electrical response of YBCO films with different morphologies to optical irradiation

    International Nuclear Information System (INIS)

    Frack, E.K.; Madhavrao, L.; Patl, R.; Drake, R.E.; Radparvar, M.

    1991-01-01

    The authors have fabricated YBCO films of varying thicknesses (300 Angstrom - 3000 Angstrom) and morphologies, and measured their electrical response to optical radiation. This paper reports on these measurements, emphasizing the dependence on temperature, light chopping frequency, and cryogenic environment. The temperature dependence of the film resistance is determined in part by the film morphology. This morphology may be represented by a simple model consisting of a two-dimensional array of coupled grains. The magnitude of the bolometric response correlates as expected with the sharpness of the superconducting transition. The increased response observed at lower temperatures (non-equilibrium) correlates with the temperature dependence of the resistance above the transition

  9. Biodegradable and bioactive CGP/PVA film for fungal growth inhibition.

    Science.gov (United States)

    Silva, Bárbara Dumas S; Ulhoa, Cirano J; Batista, Karla A; Di Medeiros, Maria Carolina; Da Silva Filho, Rômulo Roosevelt; Yamashita, Fabio; Fernandes, Kátia F

    2012-07-01

    In this study, chitinolytic enzymes produced by Trichoderma asperellum were immobilized on a biodegradable film manufactured with a blend of cashew gum polysaccharide (CGP) and polyvinyl alcohol (PVA), and tested as a fungal growth inhibitor. The film was produced by casting a blend of CGP and PVA solution on glass molds. The CGP/PVA film showed 68% water solubility, tensile strength of 23.7 MPa, 187.2% elongation and 52% of mass loss after 90 days in soil. The presence of T-CWD enzymes immobilized by adsorption or covalent attachment resulted in effective inhibition of fungal growth. Sclerotinia sclerotiorum was the most sensitive organism, followed by Aspergillus niger and Penicillium sp. SEM micrograph showed that the presence of immobilized T-CWD enzymes on CGP/PVA film produced morphological modifications on vegetative and germinative structures of the microorganisms, particularly hyphae disruption and changes of spores shape. Copyright © 2012 Elsevier Ltd. All rights reserved.

  10. Molecular beam epitaxy growth of InSb1-xBix thin films

    DEFF Research Database (Denmark)

    Yuxin Song; Shumin Wang; Saha Roy, Ivy

    2013-01-01

    Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are stu...

  11. Buffer Film Assisted Growth of Dense MWCNTs on Copper Foils for Flexible Electrochemical Applications

    Directory of Open Access Journals (Sweden)

    Udomdej Pakdee

    2017-01-01

    Full Text Available The novel Inconel buffer films were prepared on copper foils using unbalance direct current (DC magnetron sputtering. These films were employed as buffer layers for supporting the dense growth of multiwalled carbon nanotubes (MWCNTs. Thermal chemical vapor deposition (CVD with metal alloys such as stainless steel (SS type 304 films was considered to synthesize MWCNTs. To understand the effectiveness of these buffer films, the MWCNTs grown on buffer-free layer were carried out as a comparison. The main problem such as the diffusion of catalysts into the oxide layer of metal substrate during the CVD process was solved together with a creation of good electrical contact between substrate and nanotubes. The morphologies, crystallinities, and electrochemical behaviors of MWCNTs grown on Inconel buffer films with 304 SS catalysts revealed the better results for applying in flexible electrochemical applications.

  12. Effect of AlN doping on the growth morphology of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Singh, N.B.; Jones, E.; Berghmans, A.; Wagner, B.P.; Jelen, E.; McLaughlin, S.; Knuteson, D.J.; Fitelson, M.; King, M.; Kahler, D. [Northrop Grumman Corporation, ES-ATL, Linthicum, MD (United States)

    2009-09-15

    AlN doped SiC films were deposited on on-axis Si-face 4H-SiC(0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 {mu}m range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in the nitrogen atmosphere. We observed that nucleation occurred in the form of discs and growth occurred in hexagonal geometry. The X-ray studies showed (001)orientation and full width of half maxima (FWHM) was less than 0.1 indicating good crystallinity. We also observed that film deposited on the carbon crucible had long needles with anisotropic growth very similar to that of pure AlN. Some of the needles grew up to sizes of 200{mu}m in length and 40 to 50 {mu}m in width. It is clear that annealing of SiC-AlN powder or high temperature physical vapor deposition produces similar crystal structure for producing AlN-SiC solid solution. SEM studies indicated that facetted hexagons grew on the top of each other and coarsened and merged to form cm size grains on the substrate. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

    International Nuclear Information System (INIS)

    Singh, Preetam; Kaur, Davinder

    2010-01-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  14. Effect of substrate temperature and deposition rate on the morphology and optical properties of Ti films

    Energy Technology Data Exchange (ETDEWEB)

    Einollahzadeh-Samadi, M.; Dariani, R.S., E-mail: dariani@alzahra.ac.ir

    2013-09-01

    Titanium films are deposited on transparent fluorine-doped tin oxide (FTO) glass substrates by DC magnetron sputtering process. Influences imposed by sputtering rate and substrate temperature on surface morphology and optical properties of the deposited Ti films are investigated. We observed that all the sputtered films exhibit uniform and compact surface morphology without peeling and cracking. Morphology of the films is studied using atomic force microscopy (AFM) and X-ray diffraction (XRD). The optical properties of the films are investigated using UV–vis spectroscopy. The morphological studies indicate that by increasing the substrate temperature from room temperature to 250 °C and/or decreasing sputtering rate from 660 Å/min to 540 Å/min the surface roughness decreased from 73.4 to 31.0 nm and the grain size increases from 50.76 nm to 163.93 nm. An important effect of the root mean square (RMS) surface roughness and grain size is modification of the films optical properties. In fact, an enhancement of refractive index n for the Ti films deposited at high substrate temperature and/or high deposition rate is observed, that is attributed to reduction of RMS roughness. This effect is attributed to increment of fractional volume which leads to an increase in density of deposited film. Thus, by controlling the sputtering conditions one can reach to the desired morphological and optical properties.

  15. Self-Limited Growth in Pentacene Thin Films.

    Science.gov (United States)

    Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

    2017-04-05

    Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

  16. ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

    International Nuclear Information System (INIS)

    Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

    2004-01-01

    The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

  17. Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

    Science.gov (United States)

    Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

    2014-03-01

    In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

  18. Investigation of growth, coverage and effectiveness of plasma assisted nano-films of fluorocarbon

    International Nuclear Information System (INIS)

    Joshi, Pratik P.; Pulikollu, Rajasekhar; Higgins, Steven R.; Hu Xiaoming; Mukhopadhyay, S.M.

    2006-01-01

    Plasma-assisted functional films have significant potential in various engineering applications. They can be tailored to impart desired properties by bonding specific molecular groups to the substrate surface. The aim of this investigation was to develop a fundamental understanding of the atomic level growth, coverage and functional effectiveness of plasma nano-films on flat surfaces and to explore their application-potential for complex and uneven shaped nano-materials. In this paper, results on plasma-assisted nano-scale fluorocarbon films, which are known for imparting inertness or hydrophobicity to the surface, will be discussed. The film deposition was studied as a function of time on flat single crystal surfaces of silicon, sapphire and graphite, using microwave plasma. X-ray photoelectron spectroscopy (XPS) was used for detailed study of composition and chemistry of the substrate and coating atoms, at all stages of deposition. Atomic force microscopy (AFM) was performed in parallel to study the coverage and growth morphology of these films at each stage. Combined XPS and AFM results indicated complete coverage of all the substrates at the nanometer scale. It was also shown that these films grew in a layer-by-layer fashion. The nano-films were also applied to complex and uneven shaped nano-structured and porous materials, such as microcellular porous foam and nano fibers. It was seen that these nano-films can be a viable approach for effective surface modification of complex or uneven shaped nano-materials

  19. Evolution and control of the phase competition morphology in a manganite film

    Science.gov (United States)

    Zhou, Haibiao; Wang, Lingfei; Hou, Yubin; Huang, Zhen; Lu, Qingyou; Wu, Wenbin

    2015-11-01

    The competition among different phases in perovskite manganites is pronounced since their energies are very close under the interplay of charge, spin, orbital and lattice degrees of freedom. To reveal the roles of underlying interactions, many efforts have been devoted towards directly imaging phase transitions at microscopic scales. Here we show images of the charge-ordered insulator (COI) phase transition from a pure ferromagnetic metal with reducing field or increasing temperature in a strained phase-separated manganite film, using a home-built magnetic force microscope. Compared with the COI melting transition, this reverse transition is sharp, cooperative and martensitic-like with astonishingly unique yet diverse morphologies. The COI domains show variable-dimensional growth at different temperatures and their distribution can illustrate the delicate balance of the underlying interactions in manganites. Our findings also display how phase domain engineering is possible and how the phase competition can be tuned in a controllable manner.

  20. Electrodeposition of gold thin films with controlled morphologies and their applications in electrocatalysis and SERS

    International Nuclear Information System (INIS)

    Elias, Jamil; Brodard, Pierre; Michler, Johann; Philippe, Laetitia; Gizowska, Magdalena; DeHazan, Yoram; Graule, Thomas; Widmer, Roland

    2012-01-01

    Here, an easy and effective electrochemical route towards the synthesis of gold thin films with well-controlled roughness, morphology and crystallographic orientation is reported. To control these different factors, the applied potential during deposition played a major role. A tentative nucleation and growth mechanism is demonstrated by means of electrochemical characterizations and a formation mechanism is proposed. Interestingly, the differences in geometry and orientation of the different gold deposits have shown a clear correlation with the electrocatalytical activity in the case of oxygen sensing. In addition, not only the electrocatalytical activity but also the surface-enhanced Raman scattering of the gold deposits have been found to depend both on the roughness and on the size of the surface nanostructures, allowing a fine tuning by controlling these two parameters during deposition. (paper)

  1. Growth of anodic oxide films on oxygen-containing niobium

    Energy Technology Data Exchange (ETDEWEB)

    Habazaki, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)]. E-mail: habazaki@eng.hokudai.ac.jp; Ogasawara, T. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Konno, H. [Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan); Shimizu, K. [University Chemical Laboratory, Keio University, Yokohama 223-8522 (Japan); Asami, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Saito, K. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Nagata, S. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Skeldon, P. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, P.O. Box 88, Manchester M60 1QD (United Kingdom)

    2005-09-20

    The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films.

  2. Effects of annealing time on the structure, morphology, and stress of gold–chromium bilayer film

    International Nuclear Information System (INIS)

    Zhang Hong; Wang Hu; Huang Hao-Peng; Jin Yun-Xia; Kong Fang-Yu; Cui Yun

    2016-01-01

    In this work, a 200-nm-thick gold film with a 10-nm-thick chromium layer used as an adhesive layer is fabricated on fused silica by the electron beam evaporation method. The effects of annealing time at 300 °C on the structure, morphology and stress of the film are studied. We find that chromium could diffuse to the surface of the film by formatting a solid solution with gold during annealing. Meanwhile, chromium is oxidized on the surface and diffused downward along the grain grooves in the gold film. The various operant mechanisms that change the residual stresses of gold films for different annealing times are discussed. (paper)

  3. Determination of gel content and SEM morphology for sago-PVA blends film

    International Nuclear Information System (INIS)

    Sarada Idris; Zulkafli Ghazali; Kamarudin Hashim

    2006-01-01

    Blends of polyvinyl alcohol and sago starch have been prepared to evaluate the potential of producing biodegradable products. Glycerol was introduced in the blends to improve the flexibility of the films as plasticizer in order more flexible film. These blends have been subjected to electron beam irradiation to evaluate and characterized radiation effect on the blends. Subsequently films were produced from this blend. The gel content of un-irradiated and irradiated films as evidence of cross linking was measured and discussed. This paper also discuss the films morphology from Scanning Electron Microscopy(SEM) observation. (Author)

  4. Morphology and structure of polymers in ultrathin films and constrained geometries

    Science.gov (United States)

    Gullerud, Steven Olaf

    We have explored the organization of polycaprolactone (PCL) constrained in ultrathin films and nanometer-scale domains. Specifically, PCL functionalized with triethoxysilane functional groups was used to create tethered ultrathin films on silicon (100) substrates through silanization, and a sol-gel reaction was used to produce PCL/silsesquioxane composites with nanoscale phase-separated domains. In the first case, analysis by AFM and ellipsometry showed the existence of an amorphous sublayer up to 4 nm thick. Above this, physisorbed PCL formed heterogeneous surface features, up to 7 nm thick, with the morphology dependent on the polymer solution concentration during the deposition process. Low PCL solution concentration produced amorphous globular domains, while higher polymer concentrations allowed the growth of dendritic crystalline features. We report the results of in situ thermal analysis of grafted PCL by AFM, which show the melting of the surface structures at the film surface as well as growth of new dendritic structures upon recrystallization. High tapping forces applied by the AFM tip revealed the presence of crystalline lamellae buried below an amorphous layer in the dendritic structures, as well as in the PCL sublayer when the film was cooled below room temperature. PCL phase separation behavior and morphology in sol-gel organic/inorganic nanocomposites with methylsilsesquioxane (MSSQ) or phenylsilsesquioxane (PSSQ) was probed using TEM, FTIR, and fluorescence spectroscopy of dansyl and pyrene-labeled PCL. Star-like and linear PCL were used to study the effects of molecular weight, endgroup functionality, and polymer geometry on the phase separation behavior in these materials. PCL crystallinity, as detected through FTIR, served to detect the presence of macroscopic phase separation, as well as the critical PCL loading amount at which this occurs, for a given PCL/SSQ system. Fluorescence spectroscopy of dansyl-labeled PCL detected the presence of an

  5. Correlating defect density with growth time in continuous graphene films.

    Science.gov (United States)

    Kang, Cheong; Jung, Da Hee; Nam, Ji Eun; Lee, Jin Seok

    2014-12-01

    We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene. Besides, the reaction parameters influenced the number of layers, degree of defects and uniformity of the graphene films. The increase in growth temperature and annealing time tends to accelerate the graphene growth rate and increase the diffusion length, respectively, thereby increasing the average size of graphene domains. In addition, we confirmed that the number of pinholes reduced with increase in the growth time. Micro-Raman analysis of the as-grown graphene films confirmed that the continuous graphene monolayer film with low defects and high uniformity could be obtained with prolonged reaction time, under the appropriate annealing time and growth temperature.

  6. Structural, morphological and optical studies of F doped SnO2 thin films

    Science.gov (United States)

    Chandel, Tarun; Thakur, Vikas; Dwivedi, Shailendra Kumar; Zaman, M. Burhanuz; Rajaram, Poolla

    2018-05-01

    Highly conducting and transparent FTO (flourine doped tin Oxide) thin films were grown on the glass substrates using a low cost spray pyrolysis technique. The films were characterized for their structural, morphological and optical studies using XRD, SEM and UV-Vis spectroscopy. XRD studies show that the FTO films crystallize in Tetragonal cassiterite structure. Morphological analysis using SEM show that the films are uniformly covered with spherical grains albeit high in surface roughness. The average optical transmission greater than 80% in the visible region along with the appearance of interference fringes in the transmission curves confirms the high quality of the films. Electrical studies show that the films exhibit sheet resistance below 10 Ω ϒ-1.

  7. Mechanical, barrier and morphological properties of starch nanocrystals-reinforced pea starch films.

    Science.gov (United States)

    Li, Xiaojing; Qiu, Chao; Ji, Na; Sun, Cuixia; Xiong, Liu; Sun, Qingjie

    2015-05-05

    To characterize the pea starch films reinforced with waxy maize starch nanocrystals, the mechanical, water vapor barrier and morphological properties of the composite films were investigated. The addition of starch nanocrystals increased the tensile strength of the composite films, and the value of tensile strength of the composite films was highest when starch nanocrystals content was 5% (w/w). The moisture content (%), water vapor permeability, and water-vapor transmission rate of the composite films significantly decreased as starch nanocrystals content increased. When their starch nanocrystals content was 1-5%, the starch nanocrystals dispersed homogeneously in the composite films, resulting in a relatively smooth and compact film surface and better thermal stability. However, when starch nanocrystals content was more than 7%, the starch nanocrystals began to aggregate, which resulted in the surface of the composite films developing a longitudinal fibrous structure. Copyright © 2014 Elsevier Ltd. All rights reserved.

  8. Growth and characterization of ZnO thin films prepared by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

    2006-06-15

    ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

  9. Epitaxial growth of fcc Ti films on Al(001) surfaces

    International Nuclear Information System (INIS)

    Saleh, A.A.; Shutthanandan, V.; Shivaparan, N.R.; Smith, R.J.; Tran, T.T.; Chambers, S.A.

    1997-01-01

    High-energy ion scattering (HEIS), x-ray photoelectron spectroscopy, and x-ray photoelectron diffraction (XPD) were used to study the growth of thin Ti films on Al(001) surfaces. The Al surface peak area in the backscattered ion spectrum of MeV He + ions, incident along the [00 bar 1] direction, was used to monitor the atomic structure of the Ti films during growth. An initial decrease in the area was observed indicating epitaxial film growth. This decrease continued up to a critical film thickness of about 5.5 ML, after which point the structure of the film changed. Titanium films 3, 5, and 9 ML thick were characterized using XPD in the same chamber. Both the HEIS and XPD results show that the Ti films grow with an fcc structure on Al(001). A tetragonal distortion of 2.4% in the fcc Ti film was measured using ions incident along the [10 bar 1] direction. Although there is a general similarity of fcc Ti growth on both Al(001) and Al(110), the submonolayer growth regime does show differences for the two surfaces. copyright 1997 The American Physical Society

  10. Structural, morphological and optical properties of Na and K dual doped CdS thin film

    International Nuclear Information System (INIS)

    Mageswari, S.; Dhivya, L.; Palanivel, Balan; Murugan, Ramaswamy

    2012-01-01

    Highlights: ► Effect of incorporation of Na, K and Na,K dual dopants into CdS thin film was investigated. ► Thin films were prepared by simple chemical bath deposition technique. ► The XRD analysis revealed cubic phase for all the investigated films. ► AFM analysis revealed uniform surface with crack free and densely packed morphology for CdS:Na,K film. ► The band gap value increases for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. - Abstract: CdS, sodium doped CdS (CdS:Na), potassium doped CdS (CdS:K) and sodium and potassium dual doped CdS (CdS:Na,K) thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. Structural, morphological and optical properties of the as-grown films were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and ultraviolet visible (UV–VIS) spectroscopy. The XRD analysis revealed cubic phase for ‘as-deposited’ CdS, CdS:Na, CdS:K and CdS:Na,K dual doped thin films. AFM analysis revealed uniform film surface with crack free and densely packed morphology for CdS:Na,K film. The absorption edge in the optical absorption spectra shifts towards the shorter wavelength for CdS:Na, CdS:K and CdS:Na,K thin films compared to CdS film. The optical band gap of CdS, CdS:Na, CdS:K and CdS:Na,K thin films was found to be 2.31, 2.35, 2.38 and 2.34 eV, respectively.

  11. Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films

    Science.gov (United States)

    Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.

    2018-05-01

    In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.

  12. Surface structure deduced differences of copper foil and film for graphene CVD growth

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Junjun [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Hu, Baoshan, E-mail: hubaoshan@cqu.edu.cn [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Wei, Zidong; Jin, Yan [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Luo, Zhengtang [Department of Chemical and Biomolecular Engineering, The Hongkong University of Science and Technology, Kowloon (Hong Kong); Xia, Meirong [School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China); Pan, Qingjiang [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080 (China); Liu, Yunling [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China)

    2014-05-01

    Highlights: • We demonstrate the significant differences between Cu foil and film in the surface morphology and crystal orientation distribution. • The different surface structure leads to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. • Nucleation densities and growth rate differences at the initial growth stages on the Cu foil and film were investigated and discussed. Abstract: Graphene was synthesized on Cu foil and film by atmospheric pressure chemical vapor deposition (CVD) with CH₄ as carbon source. Electron backscattered scattering diffraction (EBSD) characterization demonstrates that the Cu foil surface after the H₂-assisted pre-annealing was almost composed of Cu(1 0 0) crystal facet with larger grain size of ~100 μm; meanwhile, the Cu film surface involved a variety of crystal facets of Cu(1 1 1), Cu(1 0 0), and Cu(1 1 0), with the relatively small grain size of ~10 μm. The different surface structure led to the distinctive influences of the CH₄ and H₂ concentrations on the thickness and quality of as-grown graphene. Further data demonstrate that the Cu foil enabled more nucleation densities and faster growth rates at the initial growth stages than the Cu film. Our results are beneficial for understanding the relationship between the metal surface structure and graphene CVD growth.

  13. Composite Films of Arabinoxylan and Fibrous Sepiolite: Morphological, Mechanical, and Barrier Properties

    DEFF Research Database (Denmark)

    Sárossy, Zsuzsa; Blomfeldt, J.O.; Hedenqvist, Mikael S.

    2012-01-01

    (ethylene glycol) methyl ether (mPEG) plasticizer addition. Incorporation of sepiolite did not significantly influence the thermal degradation or the gas barrier properties of arabinoxylan films, which is likely a consequence of sepiolite fiber morphology. In summary, sepiolite was shown to have potential...... as an additive to obtain stronger hemicellulose films although other approaches, possibly in combination with the use of sepiolite, would be needed if enhanced film barrier properties are required for specific applications....

  14. GISAXS view of induced morphological changes in nanostructured CeVO [sub] 4 thin films

    OpenAIRE

    Lučić Lavčević, Magdi; Dubček, Pavo; Bernstorff, Sigrid; Turković, Aleksandra; Orel, Bojan; Crnjak Orel, Zorica

    2015-01-01

    Nanostructured CeVO4 films, designed for applications in electrochemical cells and electrochromic devices, were obtained on glass substrates by the sol-gel process. An analysis of morphological modifications in these films, induced by ultrasonication, annealing, and introduction of lithium ions, was performed, using the grazing-incidence small-angle X-ray scattering technique (GISAXS). The GISAXS results are discussed and related with complementary examinations of the same films in real space...

  15. Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

    International Nuclear Information System (INIS)

    Zhang, R H; Slamovich, E B; Handwerker, C A

    2013-01-01

    Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl − ) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl − ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl − to dominate. By optimizing the growth conditions, a dense ∼100 nm thickness film was fabricated in 15 min from a solution of [Cl − ]/[Zn 2+ ] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm 2 V −1 s −1 at zero back-gate bias. (paper)

  16. Effect of film thickness on morphological evolution in dewetting and crystallization of polystyrene/poly(ε-caprolactone) blend films.

    Science.gov (United States)

    Ma, Meng; He, Zhoukun; Yang, Jinghui; Chen, Feng; Wang, Ke; Zhang, Qin; Deng, Hua; Fu, Qiang

    2011-11-01

    In this Article, the morphological evolution in the blend thin film of polystyrene (PS)/poly(ε-caprolactone) (PCL) was investigated via mainly AFM. It was found that an enriched two-layer structure with PS at the upper layer and PCL at the bottom layer was formed during spinning coating. By changing the solution concentration, different kinds of crystal morphologies, such as finger-like, dendritic, and spherulitic-like, could be obtained at the bottom PCL layer. These different initial states led to the morphological evolution processes to be quite different from each other, so the phase separation, dewetting, and crystalline morphology of PS/PCL blend films as a function of time were studied. It was interesting to find that the morphological evolution of PS at the upper layer was largely dependent on the film thickness. For the ultrathin (15 nm) blend film, a liquid-solid/liquid-liquid dewetting-wetting process was observed, forming ribbons that rupture into discrete circular PS islands on voronoi finger-like PCL crystal. For the thick (30 nm) blend film, the liquid-liquid dewetting of the upper PS layer from the underlying adsorbed PCL layer was found, forming interconnected rim structures that rupture into discrete circular PS islands embedded in the single lamellar PCL dendritic crystal due to Rayleigh instability. For the thicker (60 nm) blend film, a two-step liquid-liquid dewetting process with regular holes decorated with dendritic PCL crystal at early annealing stage and small holes decorated with spherulite-like PCL crystal among the early dewetting holes at later annealing stage was observed. The mechanism of this unusual morphological evolution process was discussed on the basis of the entropy effect and annealing-induced phase separation.

  17. Morphological, mechanical, barrier and properties of films based on acetylated starch and cellulose from barley.

    Science.gov (United States)

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Biduski, Bárbara; Evangelho, Jarine Amaral do; Bruni, Graziella Pinheiro; Antunes, Mariana Dias; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2017-01-01

    Biodegradable films of native or acetylated starches with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. The tensile strength of the acetylated starch film was lower than those of the native starch film, without fibers. The addition of fibers increased the tensile strength and decreased the elongation and the moisture of native and acetylated starches films. The acetylated starch film showed higher water solubility when compared to native starch film. The addition of cellulose fibers reduced the water solubility of the acetylated starch film. The films reinforced with cellulose fiber exhibited a higher initial decomposition temperature and thermal stability. The mechanical, barrier, solubility, and thermal properties are factors which direct the type of the film application in packaging for food products. The films elaborated with acetylated starches of low degree of substitution were not effective in a reduction of the water vapor permeability. The addition of the cellulose fiber in acetylated and native starches films can contribute to the development of more resistant films to be applied in food systems that need to maintain their integrity. © 2016 Society of Chemical Industry. © 2016 Society of Chemical Industry.

  18. Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Zhou Kai

    2010-01-01

    Full Text Available Abstract The structure of vertically aligned carbon nanotubes (CNTs severely depends on the properties of pre-prepared catalyst films. Aiming for the preparation of precisely controlled catalyst film, atomic layer deposition (ALD was employed to deposit uniform Fe2O3 film for the growth of CNT arrays on planar substrate surfaces as well as the curved ones. Iron acetylacetonate and ozone were introduced into the reactor alternately as precursors to realize the formation of catalyst films. By varying the deposition cycles, uniform and smooth Fe2O3 catalyst films with different thicknesses were obtained on Si/SiO2 substrate, which supported the growth of highly oriented few-walled CNT arrays. Utilizing the advantage of ALD process in coating non-planar surfaces, uniform catalyst films can also be successfully deposited onto quartz fibers. Aligned few-walled CNTs can be grafted on the quartz fibers, and they self-organized into a leaf-shaped structure due to the curved surface morphology. The growth of aligned CNTs on non-planar surfaces holds promise in constructing hierarchical CNT architectures in future.

  19. Tuning the morphology of metastable MnS films by simple chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Dhandayuthapani, T. [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Girish, M. [Department of Physics, Alagappa University, Karaikudi 630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630004 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600025 (India)

    2015-10-30

    Graphical abstract: - Highlights: • MnS films with diverse morphological features were prepared without any complexing agent. • The change in morphology of MnS films may be due to the “oriented aggregation”. • The dual role (as sulfur source and structure directing agent) of thiourea was observed. • Sulfur source concentration induced enhancement in the crystallization of films. - Abstract: In the present investigation, we have prepared the spherical particles, almond-like, and cauliflower-like morphological structures of metastable MnS films on glass substrate by chemical bath deposition technique at low temperature without using any complexing or chelating agent. The morphological change of MnS films with molar ratio may be due to the oriented aggregation of adjacent particles. The compositional purity of deposited film was confirmed by the EDAX study. X-ray diffraction and micro-Raman studies confirm the sulfur source concentration induced enhancement in the crystallization of films with metastable MnS phase (zinc-blende β-MnS, and wurtzite γ-MnS). The shift in PL emission peak with molar ratio may be due to the change in optical energy band gap of the MnS, which was further confirmed by the optical absorbance study. The paramagnetic behavior of the sample was confirmed by the M–H plot.

  20. Growth morphology and inheritance of fasciation mutation in sunflower

    International Nuclear Information System (INIS)

    Jambhulkar, S.J.

    2002-01-01

    A gamma ray induced fascination mutation was isolated from sunflower variety Surya. Morphological traits and inheritance pattern of the mutant were studied. Fascination mutation was the manifestation of enlarged shoot apex, smaller and more number of leaves with irregular leaf arrangements, significantly higher leaf area and leaf biomass, flattened stem and low seed yield than the parent variety. Inheritance studies indicated that fascination was governed by a single recessive nuclear gene, which may be responsible for the disturbed differentiation of stem and leaves during developmental stages of plant growth [it

  1. Growth analysis of cadmium sulfide thin films by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Ramanathan, K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    CdS films have been deposited by solution growth on SnO{sub 2} and glass substrates. Nucleation on SnO{sub 2} occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO{sub 2} depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.

  2. Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

    Science.gov (United States)

    Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

    2018-06-01

    We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

  3. Nanoscale Morphology of Doctor Bladed versus Spin-Coated Organic Photovoltaic Films

    KAUST Repository

    Pokuri, Balaji Sesha Sarath

    2017-08-17

    Recent advances in efficiency of organic photovoltaics are driven by judicious selection of processing conditions that result in a “desired” morphology. An important theme of morphology research is quantifying the effect of processing conditions on morphology and relating it to device efficiency. State-of-the-art morphology quantification methods provide film-averaged or 2D-projected features that only indirectly correlate with performance, making causal reasoning nontrivial. Accessing the 3D distribution of material, however, provides a means of directly mapping processing to performance. In this paper, two recently developed techniques are integrated—reconstruction of 3D morphology and subsequent conversion into intuitive morphology descriptors —to comprehensively image and quantify morphology. These techniques are applied on films generated by doctor blading and spin coating, additionally investigating the effect of thermal annealing. It is found that morphology of all samples exhibits very high connectivity to electrodes. Not surprisingly, thermal annealing consistently increases the average domain size in the samples, aiding exciton generation. Furthermore, annealing also improves the balance of interfaces, enhancing exciton dissociation. A comparison of morphology descriptors impacting each stage of photophysics (exciton generation, dissociation, and charge transport) reveals that spin-annealed sample exhibits superior morphology-based performance indicators. This suggests substantial room for improvement of blade-based methods (process optimization) for morphology tuning to enhance performance of large area devices.

  4. Influence of Te and Se doping on ZnO films growth by SILAR method

    Science.gov (United States)

    Güney, Harun; Duman, Ćaǧlar

    2016-04-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  5. Influence of Te and Se doping on ZnO films growth by SILAR method

    International Nuclear Information System (INIS)

    Güney, Harun; Duman, Çağlar

    2016-01-01

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  6. Influence of Te and Se doping on ZnO films growth by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Güney, Harun, E-mail: harunguney25@hotmail.com [Department of Electric and Energy, Vocation High School, Ağrı İbrahim Çeçen University (Turkey); Duman, Çağlar, E-mail: caglarduman@erzurum.edu.tr [Department of Electrical and Electronic Engineering, Faculty of Engineering, Erzurum Technical University (Turkey)

    2016-04-18

    The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

  7. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  8. Morphological and thermal properties of photodegradable biocomposite films

    CSIR Research Space (South Africa)

    Kesavan Pillai, Sreejarani

    2013-07-01

    Full Text Available Biocomposites containing ultraviolet (UV) radiation absorbing inorganic nanofillers are of great interest in food packaging applications. The biodegradable polylactide (PLA) composite films were prepared by solvent casting method by incorporating 1...

  9. Glucagon Amyloid-like Fibril Morphology Is Selected via Morphology-Dependent Growth Inhibition

    DEFF Research Database (Denmark)

    Andersen, C.B.; Otzen, D.; Christiansen, Gunna

    2007-01-01

    Protein Structure and Biophysics, Novo Nordisk A/S, Novo Nordisk Park, DK-2760 Malov, Denmark, Centre for Insoluble Protein Structures (inSPIN), Department of Life Sciences, Aalborg University, Sohngaardsholmsvej 49, DK-9000 Aalborg, Denmark, and Institute of Medical Microbiology and Immunology...... twisted fibril seeds cannot grow at high concentrations. We conclude that there exists a morphology-dependent mechanism for inhibition of glucagon fibril growth. Light scattering experiments indicate that glucagon is mainly monomeric below 1 mg/mL and increasingly trimeric above this concentration. We...

  10. Morphologies of Sol–Gel Derived Thin Films of ZnO Using Different Precursor Materials and their Nanostructures

    Directory of Open Access Journals (Sweden)

    Chandra Sudhir

    2007-01-01

    Full Text Available AbstractWe have shown that the morphological features of the sol–gel derived thin films of ZnO depend strongly on the choice of the precursor materials. In particular, we have used zinc nitrate and zinc acetate as the precursor materials. While the films using zinc acetate showed a smoother topography, those prepared by using zinc nitrate exhibited dendritic character. Both types of films were found to be crystalline in nature. The crystallite dimensions were confined to the nanoscale. The crystallite size of the nanograins in the zinc nitrate derived films has been found to be smaller than the films grown by using zinc acetate as the precursor material. Selected area electron diffraction patterns in the case of both the precursor material has shown the presence of different rings corresponding to different planes of hexagonal ZnO crystal structure. The results have been discussed in terms of the fundamental considerations and basic chemistry governing the growth kinetics of these sol–gel derived ZnO films with both the precursor materials.

  11. Composition and growth procedure-dependent properties of electrodeposited CuInSe 2 thin films

    Science.gov (United States)

    Babu, S. Moorthy; Ennaoui, A.; Lux-Steiner, M. Ch.

    2005-02-01

    CuInSe 2 thin films were deposited on molybdenum-coated glass substrates by electrodeposition. Deposition was carried out with a variety of electrochemical bath compositions. The quality of the deposits depends very much on the source materials as well as the concentration of the same in the electrolyte. The deposition potential was varied from -0.4 to -0.75 V vs. SCE. The pH of the solution was adjusted to 1.5-2 using diluted sulphuric acid. Chloride salts containing bath yield good surface morphology, but there is always excess of the metallic content in the deposited films. Different growth procedures, like initial metallic layers of copper or indium, layers of copper selenide or indium selenide before the actual deposition of ternary chalcopyrite layers were attempted. Fabrication pathway, morphological and compositional changes due to the different precursor route has been analysed. The quality of the deposits prepared by one-step electrodeposition is better than the deposits with a two-stage process. The deposited films were characterized with XRD, SEM-EDAX, UV-visible spectroscopy and I- V characteristics. The deposited films were annealed in air as well as in nitrogen atmosphere. The influence of annealing temperature, environment and annealing time on the properties of the films are evaluated. Attempts were made to fabricate solar cell structure from the deposited absorber films. The structure of Mo/CuInSe 2/CdS/ZnO/Ni was characterized with surface, optical and electrical studies.

  12. Laterally enhanced growth of electrodeposited Au to form ultrathin films on nonconductive surfaces

    International Nuclear Information System (INIS)

    Kobayashi, Chiaki; Saito, Mikiko; Homma, Takayuki

    2012-01-01

    We investigated the laterally enhanced growth of electrodeposited Au for fabricating nanogap electrodes. To enhance the lateral growth, we carried out electrodeposition over patterned electrodes onto a SiO 2 surface modified with self-assembled monolayers (SAMs) or dendrimers with amine groups. The morphology and thickness of the Au films were controlled by adjusting deposition conditions such as duration, applied potential, and Au ion concentration in the bath. To investigate the mechanism of the laterally enhanced growth, the surface states of SAM- or dendrimer-modified SiO 2 were analyzed by X-ray photoelectron spectroscopy (XPS). The XPS results indicate the existence of organic molecules and Au ions on the SiO 2 surface, which suggests that laterally enhanced growth is induced by the Au ions coordinated on the amine groups of the organic molecules. To further analyze the mechanism of the laterally enhanced growth, we investigated the relationship between the morphology of the laterally enhanced growth of Au and the amount of Au ions on organic molecules. The laterally enhanced growth of Au is expected to be useful for fabricating thin film nanogap electrodes.

  13. Morphology and structure evolution of Cu(In,Ga)S{sub 2} films deposited by reactive magnetron co-sputtering with electron cyclotron resonance plasma assistance

    Energy Technology Data Exchange (ETDEWEB)

    Nie, Man, E-mail: man.nie@helmholtz-berlin.de; Ellmer, Klaus [Department of Solar Fuels and Energy Storage Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D14109 Berlin (Germany)

    2014-02-28

    Cu(In,Ga)S{sub 2} (CIGS) films were deposited on Mo coated soda lime glass substrates using an electron cyclotron resonance plasma enhanced one-step reactive magnetron co-sputtering process (ECR-RMS). The crystalline quality and the morphology of the Cu(In,Ga)S{sub 2} films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and X-ray fluorescence. We also compared these CIGS films with films previously prepared without ECR assistance and find that the crystallinity of the CIGS films is correlated with the roughness evolution during deposition. Atomic force microscopy was used to measure the surface topography and to derive one-dimensional power spectral densities (1DPSD). All 1DPSD spectra of CIGS films exhibit no characteristic peak which is typical for the scaling of a self-affine surface. The growth exponent β, characterizing the roughness R{sub q} evolution during the film growth as R{sub q} ∼ d{sup β}, changes with film thickness. The root-mean-square roughness at low temperatures increases only slightly with a growth exponent β = 0.013 in the initial growth stage, while R{sub q} increases with a much higher exponent β = 0.584 when the film thickness is larger than about 270 nm. Additionally, we found that the H{sub 2}S content of the sputtering atmosphere and the Cu- to-(In + Ga) ratio has a strong influence of the morphology of the CIGS films in this one-step ECR-RMS process.

  14. Physical vapor deposited thin films of lignins extracted from sugar cane bagasse: morphology, electrical properties, and sensing applications.

    Science.gov (United States)

    Volpati, Diogo; Machado, Aislan D; Olivati, Clarissa A; Alves, Neri; Curvelo, Antonio A S; Pasquini, Daniel; Constantino, Carlos J L

    2011-09-12

    The concern related to the environmental degradation and to the exhaustion of natural resources has induced the research on biodegradable materials obtained from renewable sources, which involves fundamental properties and general application. In this context, we have fabricated thin films of lignins, which were extracted from sugar cane bagasse via modified organosolv process using ethanol as organic solvent. The films were made using the vacuum thermal evaporation technique (PVD, physical vapor deposition) grown up to 120 nm. The main objective was to explore basic properties such as electrical and surface morphology and the sensing performance of these lignins as transducers. The PVD film growth was monitored via ultraviolet-visible (UV-vis) absorption spectroscopy and quartz crystal microbalance, revealing a linear relationship between absorbance and film thickness. The 120 nm lignin PVD film morphology presented small aggregates spread all over the film surface on the nanometer scale (atomic force microscopy, AFM) and homogeneous on the micrometer scale (optical microscopy). The PVD films were deposited onto Au interdigitated electrode (IDE) for both electrical characterization and sensing experiments. In the case of electrical characterization, current versus voltage (I vs V) dc measurements were carried out for the Au IDE coated with 120 nm lignin PVD film, leading to a conductivity of 3.6 × 10(-10) S/m. Using impedance spectroscopy, also for the Au IDE coated with the 120 nm lignin PVD film, dielectric constant of 8.0, tan δ of 3.9 × 10(-3), and conductivity of 1.75 × 10(-9) S/m were calculated at 1 kHz. As a proof-of-principle, the application of these lignins as transducers in sensing devices was monitored by both impedance spectroscopy (capacitance vs frequency) and I versus time dc measurements toward aniline vapor (saturated atmosphere). The electrical responses showed that the sensing units are sensible to aniline vapor with the process being

  15. Simulated Thin-Film Growth and Imaging

    Science.gov (United States)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  16. Mechanical, barrier and morphological properties of pea starch and peanut protein isolate blend films.

    Science.gov (United States)

    Sun, Qingjie; Sun, Cuixia; Xiong, Liu

    2013-10-15

    Mechanical, barrier and morphological properties of edible films based on blends of Pea starch (PS) and Peanut protein isolate (PPI) plasticized with glycerol (30%, w/w) were investigated. As PPI ratio in PS/PPI blends increased, the thickness of films decreased, the opacity slightly elevated and color intensified. The addition of PPI to the PS film significantly reduced tensile strength from 5.44 MPa to 3.06 MPa, but increased elongation from 28.56% to 98.12% with the incorporation of PPI into PS at 50% level. Film solubility value fell from 22.31% to 9.78% upon the incorporation of PPI ranged from 0 to 50% level. When PPI was added into PS film at 40% level, the WVP and WVTR of the films markedly dropped from 11.18% to 4.19% and 6.16 to 1.95%, respectively. Scanning electron microscopy (SEM) of the surface of films showed that many swollen starch granules were presented in the 100% PS film, while 100% PPI film was observed to have rougher surfaces with presence of pores or cavities. The PS/PPI blend films upon the incorporation of PPI at 20% and 50% level were not homogeneous. However, the smoother film surface was observed in PS/PPI blend films with the addition of PPI at 40% level. SEM image of the cross-sections of the films revealed that the 100% PS film showed a uniform and compact matrix without disruption, and pore formation and 100% PPI film displayed a smooth structure. Rougher and flexible network was shown in blend film with the addition of PPI reaching 40% level. Copyright © 2013. Published by Elsevier Ltd.

  17. Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

    International Nuclear Information System (INIS)

    Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

    2015-01-01

    Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Corrosion resistance and biocompatibility of zirconium oxynitride thin film growth by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G. I.; Olaya, J. J.; Clavijo, D.; Alfonso, J. E. [Universidad Nacional de Colombia, Carrera 45 No. 26-85, AA 14490 Bogota D. C. (Colombia); Bethencourt, M., E-mail: jealfonsoo@unal.edu.co [Universidad de Cadiz, Centro Andaluz de Ciencia y Tecnologia Marinas, Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Av. Republica de Saharaui, Puerto Real, E-11510 Cadiz (Spain)

    2012-07-01

    Thin films of zirconium oxynitride were grown on common glass, silicon (100) and stainless steel 316 L substrates using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (Sem) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The corrosion resistance studies were made on samples of stainless steel 316 L coated and uncoated with Zr{sub x}N{sub y}O films, through of polarization curves. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316 L through proliferation and cellular adhesion. The XRD analysis shows that films deposited at 623 K, with a flow ratio {Phi}N{sub 2}/{Phi}O{sub 2} of 1.25 and a total deposit time of 30 minutes grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The Sem analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. The analysis of the corrosion resistant, shows that the stainless steel coated with the film was increased a factor 10. Finally; through the analysis of the biocompatibility we established that the films have a better surface than the substrate (stainless steel 316 L) in terms of the adhesion and proliferation of bone cells. (Author)

  19. Synthesis and biological characterization of zirconium oxynitride thin film growth by radio-frequency sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cubillos, G.I. [Departamento de Química, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Olaya, J.J. [Facultad de Ingeniería, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Clavijo, D. [Facultad de Medicina, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Alfonso, J.E., E-mail: jealfonsoo@unal.edu.co [Grupo de materiales con Aplicaciones Tecnológicas, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia); Cardozo, C. [Instituto de Biotecnología, Universidad Nacional de Colombia, AA 14490 Bogotá (Colombia)

    2013-02-01

    Thin films of zirconium oxynitride were grown on common glass, silicon substrates (100) and on stainless steel 316L using the reactive RF magnetron sputtering technique. The films were analyzed through structural, morphological, and biocompatibility studies. The structural analysis was carried out using X-ray diffraction (XRD), and the morphological analysis was carried out using scanning electron microscopy (SEM) and atomic force microscopy (AFM). These studies were done as a function of growth parameters, such as power applied to the target, substrate temperature, and flow ratios. The studies of biocompatibility were carried out on zirconium oxynitride films deposited on stainless steel 316L through proliferation and cellular adhesion. The XRD analysis showed that films deposited at 623 K, with a flow ratio ΦN{sub 2}/ΦO{sub 2} of 1.25 and a total deposit time of 30 min grew preferentially oriented along the (111) plane of the zirconium oxynitride monoclinic phase. The SEM analyses showed that the films grew homogeneously, and the AFM studies indicated that the average rugosity of the film was 5.9 nm and the average particle size was 150 nm. Finally, through the analysis of the biocompatibility, we established that the films have a better surface than the substrate (stainless steel 316L) in terms of adhesion and proliferation of bone cells. - Highlights: ►ZrO{sub x}N{sub y} thin films were deposited using reactive radio-frequency magnetron sputtering. ►We studied the effect of deposition parameters on ZrO{sub x}N{sub y} thin films microstructure. ►We have been able to grow bone cells on ZrO{sub x}N{sub y} coated stainless steel 316L.

  20. Optical properties of organic semiconductor thin films. Static spectra and real-time growth studies

    Energy Technology Data Exchange (ETDEWEB)

    Heinemeyer, Ute

    2009-07-20

    The aim of this work was to establish the anisotropic dielectric function of organic thin films on silicon covered with native oxide and to study their optical properties during film growth. While the work focuses mainly on the optical properties of Diindenoperylene (DIP) films, also the optical response of Pentacene (PEN) films during growth is studied for comparison. Spectroscopic ellipsometry and differential reflectance spectroscopy are used to determine the dielectric function of the films ex-situ and in-situ, i.e. in air and in ultrahigh vacuum. Additionally, Raman- and fluorescence spectroscopy is utilized to characterize the DIP films serving also as a basis for spatially resolved optical measurements beyond the diffraction limit. Furthermore, X-ray reflectometry and atomic force microscopy are used to determine important structural and morphological film properties. The absorption spectrum of DIP in solution serves as a monomer reference. The observed vibronic progression of the HOMO-LUMO transition allows the determination of the Huang-Rhys parameter experimentally, which is a measure of the electronic vibrational coupling. The corresponding breathing modes are measured by Raman spectroscopy. The optical properties of DIP films on native oxide show significant differences compared to the monomer spectrum due to intermolecular interactions. First of all, the thin film spectra are highly anisotropic due to the structural order of the films. Furthermore the Frenkel exciton transfer is studied and the energy difference between Frenkel and charge transfer excitons is determined. Real-time measurements reveal optical differences between interfacial or surface molecules and bulk molecules that play an important role for device applications. They are not only performed for DIP films but also for PEN films. While for DIP films on glass the appearance of a new mode is visible, the spectra of PEN show a pronounced energy red-shift during growth. It is shown how the

  1. Growth of ZnO nanostructures on Au-coated Si: Influence of growth temperature on growth mechanism and morphology

    DEFF Research Database (Denmark)

    Kumar, Rajendra; McGlynn, E.; Biswas, M.

    2008-01-01

    ZnO nanostructures were grown on Au-catalyzed Si silicon substrates using vapor phase transport at growth temperatures from 800 to 1150 degrees C. The sample location ensured a low Zn vapor supersaturation during growth. Nanostructures grown at 800 and 850 degrees C showed a faceted rodlike...... growth tended to dominate resulting in the formation of a porous, nanostructured morphology. In all cases growth was seen only on the Au-coated region. Our results show that the majority of the nanostructures grow via a vapor-solid mechanism at low growth temperatures with no evidence of Au nanoparticles...

  2. Effect of splat morphology on the microstructure and dielectric properties of plasma sprayed barium titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Pakseresht, A.H., E-mail: amirh_pak@yahoo.com [Center of Ceramic Coatings, Department of Ceramics, Materials and Energy Research Center, PO Box 31787-316, Karaj (Iran, Islamic Republic of); Rahimipour, M.R. [Center of Ceramic Coatings, Department of Ceramics, Materials and Energy Research Center, PO Box 31787-316, Karaj (Iran, Islamic Republic of); Vaezi, M.R. [Department of Nanotechnology and Advanced Materials, Materials and Energy Research Center, PO Box 31787-316, Karaj (Iran, Islamic Republic of); Salehi, M. [Department of Materials Engineering, Isfahan University of Technology, PO Box 84156-83111, Isfahan (Iran, Islamic Republic of)

    2015-01-01

    Highlights: • BaTiO{sub 3} splats were collected on the mirror polished substrate for the first time. • There was no amorphous phase in the coating collected on the preheated substrate. • The dielectric coefficient was increased by a factor of 3 for the coatings sprayed on the preheated substrates. - Abstract: In the thermal spray process, the film is built up by impingement of molten droplets onto substrate. Splats are created by flattening and spreading of the impacting droplets. Splat morphology can determine the microstructure, physical and mechanical properties of the coating. In this study, BaTiO{sub 3} films were deposited onto a mirror polished stainless steel substrates kept at three different temperatures (25, 300 and 600 °C). At the elevated temperatures, the substrate surface topography and the desorbtion of adsorbates and condensate at the substrate surface are two important factors which change the morphology of the individual splats, from splash morphology to disk-like shape. Splat morphology can determine deposit microstructure and improve the coating properties. The morphology of individual splats and the films were studied using scanning electron microscopy. Phase formation of the films was analyzed by X-ray diffraction. The surface topography of the substrates with different temperatures was analyzed using atomic force microscopy. Furthermore, X-ray photoelectron spectroscopy was performed to determine the chemical compositions of the surface substrate. Results indicated that the porosity in the film produced at room temperature was higher than that in the film deposited on the heated substrates. Also, the dielectric coefficient of the films was increased by decreasing the common defects from 120 to 505 for film deposited on as-received and heated substrates, respectively.

  3. Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

    International Nuclear Information System (INIS)

    Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

    2008-01-01

    Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

  4. Structural, morphological and Raman studies of pulse electrosynthesised indium antimonide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Chandel, Tarun; Rajaram, P. [School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)

    2015-08-28

    InSb films deposited on fluorine doped tin oxide (FTO) substrates by a pulse elctrodeposition technique. The deposition was carried out at an applied potential −1.3V versus Ag/AgCl electrode. Structural, morphological and optical studies were performed on the electrodeposited InSb. X-ray diffraction (XRD) studies show that the deposited InSb films are polycrystalline in nature having the zinc blend structure. The crystallite size (D), dislocation density (δ) and strain (ε) were calculated using XRD results. The EDAX analysis shows that chemical composition of In{sup 3+} and Sb{sup 3+} ions is close to the required stoichiometry. The surface morphology of the deposited films was examined using scanning electron microscopy (SEM). SEM studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. However, the crystallite size determined by the Scherrer method shows a size close to 30 nm. Surface morphology studies of the InSb films were also performed using atomic force microscopy (AFM). The average surface roughness as measured by AFM is around 40 nm. Hot probe studies show that all the electrodeposited thin films have n type conductivity and the thickness of the films is calculated using electrochemical formula.

  5. The growth and characterisation of YBa2Cu3O7-δ superconducting thin films

    International Nuclear Information System (INIS)

    McCurry, M.P.

    1999-02-01

    The normal state properties of YBa 2 Cu 3 O 7-δ (YBCO) are not completely understood. It is known that the oxygen doping play a large part in determining these properties. The optical conductivity of a series of c-axis YBCO thin films was investigated in this thesis. The films were grown on (100) MgO substrates using a pulsed laser deposition (PLD) system and characterised using X-ray diffraction, atomic force microscopy and resistance-temperature measurements. The optimum parameters for c-axis YBCO thin film growth were determined by systematically varying the main deposition parameters. The best quality films had a transition temperature T c ∼ 88K, with a transition width ∼ 1-2K. Critical current densities of J c ∼ 10 7 Acm -2 were obtained. Substrate and target morphology affected the quality of the films. a-axis YBCO films were grown using a PrBa 2 Cu 3 O 7 (PBCO) film as a template for growth. The choice of target and substrate were again important, with a smooth substrate essential for the multi-layering. T c ∼ 83K and J c ∼ 10 6 Acm -2 were the best values obtained. These values compare with data published on the 'best' YBCO films deposited by PLD. A series of c-axis films was controllably under-doped using an ex-situ annealing process. The as-grown films were assumed to be optimally doped with δ ∼ 0.05. Doping levels in the 'metallic' region, 0.05 -2 mbar. Another tetragonal film was obtained by cooling it after deposition in a nitrogen atmosphere. Neither had a superconducting transition; the c-axes of both films were elongated. The films could be successfully re-doped with oxygen, with a subsequent return to optimal values of T c and c-axis lattice parameter. The dielectric function of optimally doped and under-doped c-axis YBCO films was determined using the attenuated total reflection (ATR) technique. This data was obtained at a fixed frequency of 2984 cm -1 , (0.366eV), at temperatures ranging from 300K to 80K. The data was analysed in

  6. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

    2015-07-15

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

  7. Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

    International Nuclear Information System (INIS)

    Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

    2015-01-01

    The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

  8. Morphology and physiology of the epiphyseal growth plate.

    Directory of Open Access Journals (Sweden)

    Robert Klepacz

    2009-05-01

    Full Text Available The epiphyseal growth plate develops from the cartilaginous-orientated mesenchymal cells that express SOX family genes. This multilayer structure is formed by the proliferation and hypertrophy of cells that synthesize the extracellular matrix composed of collagen (mainly type II, IX, X, XI and proteoglycans (aggrecan, decorin, annexin II, V and VI. The resting zone is responsible for protein synthesis and maintaining a germinal structure. In the proliferative zone, cells rapidly duplicate. The subsequent morphological changes take place in the transformation zone, divided into the upper and lower hypertrophic layers. In the degenerative zone, the mineralization process becomes intensive due to increased release of alkaline phosphate, calcium and matrix vesicles by terminally differentiated chondrocytes and some other factors e.g., metaphyseal ingrowth vessels. At this level, as well as in the primary and secondary spongiosa zones, chondrocytes undergo apoptosis and are physiologically eliminated. Unlike adult cartilage, in fetal and early formed growth plates, unusual forms such as authophagal bodies, paralysis and dark chondrocytes were also observed. Their ultrastructure differs greatly from apoptotic and normal cartilage cells. Chondrocyte proliferation and differentiation are regulated by various endocrine, paracrine, and autocrine agents such as growth, thyroid and sex hormones, beta-catenin, bone morphogenetic proteins, insulin-like growth factor, iodothyronine deiodinase, leptin, nitric oxide, transforming growth factor beta and vitamin D metabolites. However, the most significant factor is parathyroid hormone-related protein (PTHrP which is synthesized in the perichondrium by terminally differentiated chondrocytes. Secondary to activation of PTH/PTHrP receptors, PTHrP stimulates cell proliferation by G protein activation and delays their transformation into prehypertrophic and hypertrophic chondrocytes. When proliferation is completed

  9. Adhesive and morphological characteristics of surface chemically modified polytetrafluoroethylene films

    International Nuclear Information System (INIS)

    Hopp, B.; Kresz, N.; Kokavecz, J.; Smausz, T.; Schieferdecker, H.; Doering, A.; Marti, O.; Bor, Z.

    2004-01-01

    In the present paper, we report an experimental determination of adhesive and topographic characteristics of chemically modified surface of polytetrafluoroethylene (PTFE) films. The surface chemistry was modified by ArF excimer laser irradiation in presence of triethylene-tetramine photoreagent. The applied laser fluence was varied in the range of 0.4-9 mJ/cm 2 , and the number of laser pulses incident on the same area was 1500. To detect the changes in the adhesive features of the treated Teflon samples, we measured receding contact angle for distilled water and adhesion strength, respectively. It was found that the receding contact angle decreased from 96 deg. to 30-37 deg. and the adhesion strength of two-component epoxy glue to the treated sample surface increased from 0.03 to 9 MPa in the applied laser fluence range. Additionally, it was demonstrated that the adhesion of human cells to the modified Teflon samples is far better than to the untreated ones. The contact mode and pulsed force mode atomic force microscopic investigations of the treated samples demonstrated that the measured effective contact area of the irradiated films does not differ significantly from that of the original films, but the derived adhesion force is stronger on the modified samples than on the untreated ones. Hence, the increased adhesion of the treated Teflon films is caused by the higher surface energy

  10. Surface morphology of PS-PDMS diblock copolymer films

    DEFF Research Database (Denmark)

    Andersen, T.H.; Tougaard, S.; Larsen, N.B.

    2001-01-01

    Spin coated thin films (∼400 Å) of poly(styrene)–poly(dimethylsiloxane) (PS–PDMS) diblock copolymers have been investigated using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy. Surface segregation of the poly(dimethylsiloxane) blocks was studied for five diblock copolymers which ra...

  11. Cadmium sulfide thin films growth by chemical bath deposition

    Science.gov (United States)

    Hariech, S.; Aida, M. S.; Bougdira, J.; Belmahi, M.; Medjahdi, G.; Genève, D.; Attaf, N.; Rinnert, H.

    2018-03-01

    Cadmium sulfide (CdS) thin films have been prepared by a simple technique such as chemical bath deposition (CBD). A set of samples CdS were deposited on glass substrates by varying the bath temperature from 55 to 75 °C at fixed deposition time (25 min) in order to investigate the effect of deposition temperature on CdS films physical properties. The determination of growth activation energy suggests that at low temperature CdS film growth is governed by the release of Cd2+ ions in the solution. The structural characterization indicated that the CdS films structure is cubic or hexagonal with preferential orientation along the direction (111) or (002), respectively. The optical characterization indicated that the films have a fairly high transparency, which varies between 55% and 80% in the visible range of the optical spectrum, the refractive index varies from 1.85 to 2.5 and the optical gap value of which can reach 2.2 eV. It can be suggested that these properties make these films perfectly suitable for their use as window film in thin films based solar cells.

  12. Domain growth kinetics in stratifying foam films

    Science.gov (United States)

    Zhang, Yiran; Sharma, Vivek

    2015-11-01

    Baking bread, brewing cappuccino, pouring beer, washing dishes, shaving, shampooing, whipping eggs and blowing bubbles all involve creation of aqueous foam films. Typical foam films consist of two surfactant-laden surfaces that are ~ 5 nm - 10 micron apart. Sandwiched between these interfacial layers is a fluid that drains primarily under the influence of viscous and interfacial forces, including disjoining pressure. Interestingly, a layered ordering of micelles inside the foam films (thickness characteristic scaling laws. Though several studies have focused on the expansion dynamics of isolated domains that exhibit a diffusion-like scaling, the change in expansion kinetics observed after domains contact with the Plateau border has not been reported and analyzed before.

  13. The effect of organoclay type on morphology and mechanical properties of polypropylene films: comparative study

    International Nuclear Information System (INIS)

    Gama, D.B.; Calado, J.F.; Duarte, I.S.; Silva, S.M.L.; Andrade, D.L.A.C.S.

    2012-01-01

    This paper aims to compare the effect of the type of organoclay on morphological and mechanical properties of polypropylene films. Thus, were employed two organobentonite synthesized by NanoPol/UFCG (APOC and APOCF) and a organo montmorillonite Cloisite 20A (C20A) from Southern Clay Products (Texas/USA). The PP films and the PP/organoclay hybrids were prepared in a ChillRoll extruder - 16 AX Plastics and characterized by X-ray diffraction and mechanical properties. The results indicate that the incorporation of organobentonite (APOC and APOCF) and organo montmorillonite (C20A) resulted in the formation of PP nanocomposites with predominantly intercalated morphologies. Also indicate that the mechanical behavior of the films obtained with the three clays (APOC APOCF and C20A) was similar suggesting that the organobentonite, modified with national technology, raw material of low cost when compared to commercial organo montmorillonite, can be a viable alternative in the preparation of PP films. (author)

  14. Growth and structure of Co/Au magnetic thin films

    International Nuclear Information System (INIS)

    Marsot, N.

    1999-01-01

    We have studied the growth and the crystallographic structure of magnetic ultra thin cobalt/gold films (Co/Au), in order to investigate the correlations between their magnetic and structural properties. Room temperature (R.T.) Co growth on Au (111) proceeds in three stages. Up to 2 Co monolayers (ML), a bilayer island growth mode is observed. Between 2 and 5 ML, coalescence of the islands occurs, covering the substrate surface and a Co/Au mixing is observed resulting from the de-construction of the Herringbone reconstruction. Finally, beyond 5 ML, the CoAu mixing is buried and the Co growth continues in a 3-D growth. Annealing studies at 600 K on this system show a smoothing effect of the Co film, and at the same time, segregation of Au atoms. The quality of the Co/Au interface (sharpness) is not enhanced by the annealing. The local order was studied by SEXAFS and the long range order by GIXRD showing that the Co film has a hexagonal close packed structure, with an easy magnetization axis perpendicular to the surface. From a local order point of view, the Co grows with an incoherent epitaxy and keeps its own bulk parameters. The GIXRD analysis shows a residual strain in the Co film of 4%. The difference observed between the local order analysis and the long range order results is explained in terms of the low dimensions of the diffracting domains. The evolution of film strains, as a function of the Co coverage, shows a marked deviation from the elastic strain theory. Modification of the strain field in the Co film as a function of the Au coverage is studied by GIXRD analysis. The Au growth study, at R.T., shows no evidence of a Au/Co mixing in the case of the Au/Co interface. The Au overlayer adopts a twinned face centred cubic structure on the rough Co film surface. (author)

  15. Growth models for morphological traits of sunn hemp

    Directory of Open Access Journals (Sweden)

    Cláudia Marques de Bem

    2017-10-01

    Full Text Available The objective of the present study was to fit Gompertz and Logistic nonlinear to descriptions of morphological traits of sunn hemp. Two uniformity trials were conducted and the crops received identical treatment in all experimental area. Sunn hemp seeds were sown in rows 0.5 m apart with a plant density of 20 plants per row meter in a usable area of 52 m × 50 m. The following morphological traits were evaluated: plant height (PH, number of leaves (NL, stem diameter (SD, and root length (RL. These traits were assessed daily during two sowing periods—seeds were sown on October 22, 2014 (first period and December 3, 2014 (second period. Four plants were randomly collected daily, beginning 7 days after first period and 13 days after for second period, totaling 94 and 76 evaluation days, respectively. For Gompertz models the equation was used y=a*e^((?-e?^((b-c*xiand Logistic models the equation was used yi= a/(1+e^((-b-c*xi. The inflection points of the Gompertz and Logistic models were calculated and the goodness of fit was quantified using the adjusted coefficient of determination, Akaike information criterion, standard deviation of residuals, mean absolute deviation, mean absolute percentage error, and mean prediction error. Differences were observed between the Gompertz and Logistic models and between the experimental periods in the parameter estimate for all morphological traits measured. Satisfactory growth curve fittings were achieved for plant height, number of leaves, and stem diameter in both models using the evaluation criteria: coefficient of determination (R², Akaike information criterion (AIC, standard deviation of residuals (SDR, mean absolute deviation (MAD, mean absolute percentage error (MAPE, and mean prediction error (MPE.

  16. Monolithic growth of partly cured polydimethylsiloxane thin film layers

    DEFF Research Database (Denmark)

    Yu, Liyun; Skov, Anne Ladegaard

    2014-01-01

    at different curing times. The monolithic films are investigated by rheology, scanning electron microscope, mechanical testing, dielectric relaxation spectroscopy, thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC). The morphology, mechanical and dielectric properties, as well...... to enable interlayer crosslinking reactions either by application of an adhesion promoter or by ensuring that there are reactive, complementary sites available on the two surfaces. Polydimethylsiloxane (PDMS) is a widely used polymer for DEAPs. In this work, two-layered PDMS films are adhered together...... as thermal stabilities of the bilayer elastomer films are observed to change with the curing time of the monolayers before lamination. The objective of this work is to create adhesion of two layers without destroying the original viscoelastic properties of the PDMS films, and hence enable, for example...

  17. Influence of Ge addition on the morphology and properties of TiN thin films deposited by magnetron sputtering

    International Nuclear Information System (INIS)

    Sandu, C.S.; Sanjines, R.; Benkahoul, M.; Parlinska-Wojtan, M.; Karimi, A.; Levy, F.

    2006-01-01

    Thin films of TM-X-N (TM stands for early transition metal and X = Si, Al, etc.) are used as protective coatings. The most investigated among the ternary composite systems is Ti-Si-N. The system Ti-Ge-N has been chosen to extend the knowledge about the formation of nanocomposite films. Ti-Ge-N thin films were deposited by reactive magnetron sputtering on Si and WC-Co substrates at T s = 240 deg. C, from confocal Ti and Ge targets in mixed Ar/N 2 atmosphere. The nitrogen partial pressure and the power on the Ti target were kept constant, while the power on the Ge target was varied in order to obtain various Ge concentrations in the films. No presence of Ge-N bonds was detected, while X-ray photoelectron spectroscopy measurements revealed the presence of Ti-Ge bonds. Transmission Electron Microscopy investigations have shown important changes induced by Ge addition in the morphology and structure of Ti-Ge-N films. Electron Energy-Loss Spectrometry study revealed a significant increase of Ge content at the grain boundaries. The segregation of Ge atoms to the TiN crystallite surface appears to be responsible for limitation of crystal growth and formation of a TiGe y amorphous phase

  18. Growth and morphology of thermophilic dairy starters in alginate beads.

    Science.gov (United States)

    Lamboley, Laurence; St-Gelais, Daniel; Champagne, Claude P; Lamoureux, Maryse

    2003-06-01

    The aim of this research was to produce concentrated biomasses of thermophilic lactic starters using immobilized cell technology (ICT). Fermentations were carried out in milk using pH control with cells microentrapped in alginate beads. In the ICT fermentations, beads represented 17% of the weight. Some assays were carried out with free cells without pH control, in order to compare the ICT populations with those of classical starters. With Streptococcus thermophilus, overall populations in the fermentor were similar, but maximum bead population for (8.2 x 10(9) cfu/g beads) was 13 times higher than that obtained in a traditional starter (4.9 x 10(8) cfu/ml). For both Lactobacillus helveticus strains studied, immobilized-cell populations were about 3 x 10(9) cfu/g beads. Production of immobilized Lb. bulgaricus 210R strain was not possible, since no increases in viable counts occurred in beads. Therefore, production of concentrated cell suspension in alginate beads was more effective for S. thermophilus. Photomicrographs of cells in alginate beads demonstrated that, while the morphology of S. thermophilus remained unchanged during the ICT fermentation, immobilized cells of Lb. helveticus appeared wider. In addition, cells of Lb. bulgaricus were curved and elongated. These morphological changes would also impair the growth of immobilized lactobacilli.

  19. Surface morphology of thin lysozyme films produced by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Purice, Andreea; Schou, Jørgen; Pryds, Nini

    2007-01-01

    Thin films of the protein, lysozyme, have been deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. Frozen targets of 0.3-1.0 wt.% lysozyme dissolved in ultrapure water were irradiated by laser light at 355 mn with a fluence of 2 J/cm(2). The surface quality of the thin....... The concentration of lysozyme in the ice matrix apparently does not play any significant role for the morphology of the film. The morphology obtained with MAPLE has been compared with results for direct laser irradiation of a pressed lysozyme sample (i.e. pulsed laser deposition (PLD)). (C) 2007 Elsevier B.V. All...

  20. Content on Film Evaporation Rate, Morphology, and Electrical Resistance

    Directory of Open Access Journals (Sweden)

    F. Soriano-Corral

    2012-01-01

    Full Text Available Nanocomposites of poly(methyl methacrylate-b-butyl acrylate/multiwalled carbon nanotubes were prepared from different copolymers synthesized by RITP technique using iodine functionalized poly(methyl methacrylate as macrochain transfer agent to obtain block copolymers with butyl acrylate as comonomer in a sequential copolymerization. Poly(butyl acrylate contents of 7, 20, and 30 wt% were attained in each copolymer. These copolymers were used to prepare nanostructured films by casting process, using chloroform as solvent, and carboxyl functionalized MWCNT at 0.4, 0.6, 0.8, 1.0, and 1.2 wt%. During the film preparation, the absolute drying rate (N was calculated with respect to the poly(butyl acrylate and MWCNT composition. For copolymers containing 7 and 20 wt% of poly(butyl acrylate the N values slightly decrease with the MWCNT concentration, while for the suspension prepared with the copolymer at 30 wt% of poly(butyl acrylate the N values decrease drastically down to 50% approximately. The MWCNT content at the percolation threshold point was found to be 0.8 wt%, for all nanostructured films. The dispersion of MWCNT within the polymer matrix decreased with increasing the poly(butyl acrylate composition, but it did not affect the electrical properties, which is assumed to be due to induction of the bridging effect and the MWCNT preference to locate into the poly(methyl methacrylate phase.

  1. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

    2017-01-01

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  2. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  3. Thin films growth parameters in MAPLE; application to fibrinogen

    International Nuclear Information System (INIS)

    Jelinek, M; Cristescu, R; Kocourek, T; Vorlicek, V; Remsa, J; Stamatin, L; Mihaiescu, D; Stamatin, I; Mihailescu, I N; Chrisey, D B

    2007-01-01

    Increasingly requirements on the thin film quality of functionalized materials are efficiently met by a novel laser processing technique - Matrix Assisted Pulsed Laser Evaporation (MAPLE). Examples of deposition conditions and main features characteristic to film growth rate of MAPLE-fabricated organic materials are summarized. MAPLE experimental results are compared with ones corresponding to the classical Pulsed Laser Deposition (PLD). In particular, the results of investigation of MAPLE-deposited fibrinogen blood protein thin films using a KrF* excimer laser and characterized by FTIR and Raman spectrometry are reported

  4. GISAXS View of Induced Morphological Changes in Nanostructured CeVO4 Thin Films

    Directory of Open Access Journals (Sweden)

    Magdy Lučić Lavčević

    2011-01-01

    Full Text Available Nanostructured CeVO4 films, designed for applications in electrochemical cells and electrochromic devices, were obtained on glass substrates by the sol-gel process. An analysis of morphological modifications in these films, induced by ultrasonication, annealing, and introduction of lithium ions, was performed, using the grazing-incidence small-angle X-ray scattering technique (GISAXS. The GISAXS results are discussed and related with complementary examinations of the same films in real space, performed by scanning electron microscopy on a different length scale.

  5. Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

    International Nuclear Information System (INIS)

    Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

    2015-01-01

    In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)

  6. New phenomena in epitaxial growth: solid films on quasicrystalline substrates

    International Nuclear Information System (INIS)

    Fournee, V; Thiel, P A

    2005-01-01

    An overview is given of the research conducted in the field of solid film growth on quasiperiodic surfaces. An atomistic description of quasicrystalline surfaces is presented and discussed in relation to bulk structural models. The various systems for which thin film growth has been attempted so far are reviewed. Emphasis is placed on the nucleation mechanisms of the solid films, on their growth modes in relation to the nature of the deposited metals, on the possibility of intermixing or alloying at the interface and on the epitaxial relationships at the crystal-quasicrystal interfaces. We also describe situations where the deposited elements adopt a quasiperiodic structure, which opens up the possibility of extending our understanding of the relation between quasiperiodicity and the physical properties of such structurally and chemically complex solids. (topical review)

  7. Precipitation of thin-film organic single crystals by a novel crystal growth method using electrospray and ionic liquid film

    Science.gov (United States)

    Ueda, Hiroyuki; Takeuchi, Keita; Kikuchi, Akihiko

    2018-04-01

    We report an organic single crystal growth technique, which uses a nonvolatile liquid thin film as a crystal growth field and supplies fine droplets containing solute from the surface of the liquid thin film uniformly and continuously by electrospray deposition. Here, we investigated the relationships between the solute concentration of the supplied solution and the morphology and size of precipitated crystals for four types of fluorescent organic low molecule material [tris(8-hydroxyquinoline)aluminum (Alq3), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N‧-bis(3-methylphenyl)-N,N‧-diphenylbenzidine (TPD), and N,N-bis(naphthalene-1-yl)-N,N-diphenyl-benzidine (NPB)] using an ionic liquid as the nonvolatile liquid. As the concentration of the supplied solution decreased, the morphology of precipitated crystals changed from dendritic or leaf shape to platelike one. At the solution concentration of 0.1 mg/ml, relatively large platelike single crystals with a diagonal length of over 100 µm were obtained for all types of material. In the experiment using ionic liquid and dioctyl sebacate as nonvolatile liquids, it was confirmed that there is a clear positive correlation between the maximum volume of the precipitated single crystal and the solubility of solute under the same solution supply conditions.

  8. On the Morphology of the SDS Film on the Surface of Borosilicate Glass

    Directory of Open Access Journals (Sweden)

    Zih-Yao Shen

    2017-05-01

    Full Text Available Surfactant films on solid surfaces have attracted much attention because of their scientific interest and applications, such as surface treatment agent, or for micro- or nano-scale templates for microfluidic devices. In this study, anionic surfactant sodium dodecyl sulfate (SDS solutions with various charged inorganic salts was spread on a glass substrate and dried to form an SDS thin film. Atomic force microscopy (AFM was employed to observe the micro-structure of the SDS thin film. The effects of inorganic salts on the morphology of the SDS film were observed and discussed. The results of experiments demonstrated that pure SDS film formed patterns of long, parallel, highly-ordered stripes. The existence of the inorganic salt disturbed the structure of the SDS film due to the interaction between the cationic ion and the anionic head groups of SDS. The divalent ion has greater electrostatic interaction with anionic head groups than that of the monovalent ion, and causes a gross change in the morphology of the SDS film. The height of the SDS bilayer measured was consistent with the theoretical value, and the addition of the large-sized monovalent ion would lead to lowering the height of the adsorbed structures.

  9. Morphology Development in Solution-Processed Functional Organic Blend Films: An In Situ Viewpoint.

    Science.gov (United States)

    Richter, Lee J; DeLongchamp, Dean M; Amassian, Aram

    2017-05-10

    Solution-processed organic films are a facile route to high-speed, low cost, large-area deposition of electrically functional components (transistors, solar cells, emitters, etc.) that can enable a diversity of emerging technologies, from Industry 4.0, to the Internet of things, to point-of-use heath care and elder care. The extreme sensitivity of the functional performance of organic films to structure and the general nonequilibrium nature of solution drying result in extreme processing-performance correlations. In this Review, we highlight insights into the fundamentals of solution-based film deposition afforded by recent state-of-the-art in situ measurements of functional film drying. Emphasis is placed on multimodal studies that combine surface-sensitive X-ray scattering (GIWAXS or GISAXS) with optical characterization to clearly define the evolution of solute structure (aggregation, crystallinity, and morphology) with film thickness.

  10. Morphology Development in Solution-Processed Functional Organic Blend Films: An In Situ Viewpoint

    KAUST Repository

    Richter, Lee J.

    2017-04-17

    Solution-processed organic films are a facile route to high-speed, low cost, large-area deposition of electrically functional components (transistors, solar cells, emitters, etc.) that can enable a diversity of emerging technologies, from Industry 4.0, to the Internet of things, to point-of-use heath care and elder care. The extreme sensitivity of the functional performance of organic films to structure and the general nonequilibrium nature of solution drying result in extreme processing-performance correlations. In this Review, we highlight insights into the fundamentals of solution-based film deposition afforded by recent state-of-the-art in situ measurements of functional film drying. Emphasis is placed on multimodal studies that combine surface-sensitive X-ray scattering (GIWAXS or GISAXS) with optical characterization to clearly define the evolution of solute structure (aggregation, crystallinity, and morphology) with film thickness.

  11. Morphology evolution of thin Ni film on MgO(100) substrate

    International Nuclear Information System (INIS)

    Lin, C.; Xu, Y.H.; Naramoto, H.; Wei, P.; Kitazawa, S.; Narumi, K.

    2002-01-01

    Thin Ni films with various thicknesses were deposited onto the MgO(100) single crystal substrate at 400 deg. C. The morphology measured by atomic force microscope shows an apparent correlation with the thickness. The initial 10 A film is composed of small round Ni islands. In the 25 A film, pinholes with narrow size distribution occur, which show local periodic distribution in some regions when the thickness of the film reaches 75 A. The driving force for such a structure is attributed to the elastic strain energy. When the film is about 100 A thick, the pinholes begin to disappear, due to filling by the late-coming atoms and covering of upper islands. (author)

  12. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    International Nuclear Information System (INIS)

    Sadekar, H.K.; Deshpande, N.G.; Gudage, Y.G.; Ghosh, A.; Chavhan, S.D.; Gosavi, S.R.; Sharma, Ramphal

    2008-01-01

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has ∼120 ± 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient (∼75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV

  13. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    Energy Technology Data Exchange (ETDEWEB)

    Sadekar, H K [Arts, Commerce and Science college, Sonai 414105 (M.S.) (India); Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Deshpande, N G; Gudage, Y G; Ghosh, A; Chavhan, S D; Gosavi, S R [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)

    2008-04-03

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.

  14. Spin coated versus dip coated electrochromic tungsten oxide films: Structure, morphology, optical and electrochemical properties

    International Nuclear Information System (INIS)

    Deepa, M.; Saxena, T.K.; Singh, D.P.; Sood, K.N.; Agnihotry, S.A.

    2006-01-01

    A sol-gel derived acetylated peroxotungstic acid sol encompassing 4 wt.% of oxalic acid dihydrate (OAD) has been employed for the deposition of tungsten oxide (WO 3 ) films by spin coating and dip coating techniques, in view of smart window applications. The morphological and structural evolution of the as-deposited spin and dip coated films as a function of annealing temperature (250 and 500 o C) has been examined and compared by Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). A conspicuous feature of the dip coated film (annealed at 250 o C) is that its electrochromic and electrochemical properties ameliorate with cycling without degradation in contrast to the spin coated film for which these properties deteriorate under repetitive cycling. A comparative study of spin and dip coated nanostructured thin films (annealed at 250 o C) revealed a superior performance for the cycled dip coated film in terms of higher transmission modulation and coloration efficiency in solar and photopic regions, faster switching speed, higher electrochemical activity as well as charge storage capacity. While the dip coated film could endure 2500 color-bleach cycles, the spin coated film could sustain only a 1000 cycles. The better cycling stability of the dip coated film which is a repercussion of a balance between optimal water content, porosity and grain size hints at its potential for electrochromic window applications

  15. Nonhomogeneous morphology and the elastic modulus of aligned carbon nanotube films

    International Nuclear Information System (INIS)

    Won, Yoonjin; Gao, Yuan; Kenny, Thomas W; Goodson, Kenneth E; Guzman de Villoria, Roberto; Wardle, Brian L; Xiang, Rong; Maruyama, Shigeo

    2015-01-01

    Carbon nanotube (CNT) arrays offer the potential to develop nanostructured materials that leverage their outstanding physical properties. Vertically aligned carbon nanotubes (VACNTs), also named CNT forests, CNT arrays, or CNT turfs, can provide high heat conductivity and sufficient mechanical compliance to accommodate thermal expansion mismatch for use as thermal interface materials (TIMs). This paper reports measurements of the in-plane moduli of vertically aligned, single-walled CNT (SWCNT) and multi-walled CNT (MWCNT) films. The mechanical response of these films is related to the nonhomogeneous morphology of the grown nanotubes, such as entangled nanotubes of a top crust layer, aligned CNTs in the middle region, and CNTs in the bottom layer. To investigate how the entanglements govern the overall mechanical moduli of CNT films, we remove the crust layer consisting of CNT entanglements by etching the CNT films from the top. A microfabricated cantilever technique shows that crust removal reduces the resulting moduli of the etched SWCNT films by as much as 40%, whereas the moduli of the etched MWCNT films do not change significantly, suggesting a minimal crust effect on the film modulus for thick MWCNT films (>90 μm). This improved understanding will allow us to engineer the mechanical moduli of CNT films for TIMs or packaging applications. (paper)

  16. Nonhomogeneous morphology and the elastic modulus of aligned carbon nanotube films

    Science.gov (United States)

    Won, Yoonjin; Gao, Yuan; Guzman de Villoria, Roberto; Wardle, Brian L.; Xiang, Rong; Maruyama, Shigeo; Kenny, Thomas W.; Goodson, Kenneth E.

    2015-11-01

    Carbon nanotube (CNT) arrays offer the potential to develop nanostructured materials that leverage their outstanding physical properties. Vertically aligned carbon nanotubes (VACNTs), also named CNT forests, CNT arrays, or CNT turfs, can provide high heat conductivity and sufficient mechanical compliance to accommodate thermal expansion mismatch for use as thermal interface materials (TIMs). This paper reports measurements of the in-plane moduli of vertically aligned, single-walled CNT (SWCNT) and multi-walled CNT (MWCNT) films. The mechanical response of these films is related to the nonhomogeneous morphology of the grown nanotubes, such as entangled nanotubes of a top crust layer, aligned CNTs in the middle region, and CNTs in the bottom layer. To investigate how the entanglements govern the overall mechanical moduli of CNT films, we remove the crust layer consisting of CNT entanglements by etching the CNT films from the top. A microfabricated cantilever technique shows that crust removal reduces the resulting moduli of the etched SWCNT films by as much as 40%, whereas the moduli of the etched MWCNT films do not change significantly, suggesting a minimal crust effect on the film modulus for thick MWCNT films (>90 μm). This improved understanding will allow us to engineer the mechanical moduli of CNT films for TIMs or packaging applications.

  17. Structural and morphological studies of ZnO: F films

    International Nuclear Information System (INIS)

    Tirado G, S.; Sanchez C, A.; Maldonado, A.

    2004-01-01

    Semiconductor thin films Zn O and F doped, using the chemical spray technique has been pre- pared, starting from pentanedionate and zinc acetate and ammonium fluorine in ethanol and methanol for a solution at 0.25%. The concentration [F]/[Zn] and the substrate temperature have been changed. From the X-rays diffraction and scanning electron microscopy techniques, the electrical, optical and chemical stability properties for the layers were studied. Size, geometry, and the grain orientation, distribution and the roughness effect in the light trapping were discussed. (Author)

  18. Role of electrolyte composition on structural, morphological and in-vitro biological properties of plasma electrolytic oxidation films formed on zirconium

    International Nuclear Information System (INIS)

    M, Sandhyarani; T, Prasadrao; N, Rameshbabu

    2014-01-01

    Highlights: • Uniform oxide films were formed on zirconium by plasma electrolytic oxidation. • Silicate in electrolyte alter the growth of m-ZrO 2 from (1 ¯ 11) to (2 0 0) orientation. • Addition of KOH to electrolyte improved the corrosion resistance of oxide films. • Silicon incorporated oxide films showed higher surface roughness and wettability. • Human osteosarcoma cells were strongly adhered and spreaded on all the oxide films. - Abstract: Development of oxide films on metallic implants with a good combination of corrosion resistance, bioactivity and cell adhesion can greatly improve its biocompatibility and functionality. Thus, the present work is aimed to fabricate oxide films on metallic Zr by plasma electrolytic oxidation (PEO) in methodically varied concentrations of phosphate, silicate and KOH based electrolyte systems using a pulsed DC power source. The oxide films fabricated on Zr are characterized for its phase composition, surface morphology, chemical composition, roughness, wettability, surface energy, corrosion resistance, apatite forming ability and osteoblast cell adhesion. Uniform films with thickness varying from 6 to 11 μm are formed. XRD patterns of all the PEO films showed the predominance of monoclinic zirconia phase. The film formed in phosphate + KOH electrolyte showed superior corrosion resistance, which can be ascribed to its pore free morphology. The films formed in silicate electrolyte showed higher apatite forming ability with good cell adhesion and spreading over its surface which is attributed to its superior surface roughness and wettability characteristics. Among the five different electrolyte systems employed in the present study, the PEO film formed in an electrolyte system with phosphate + silicate + KOH showed optimum corrosion resistance, apatite forming ability and biocompatibility

  19. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  20. Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

    Energy Technology Data Exchange (ETDEWEB)

    Onuk, Zuhal [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Rujisamphan, Nopporn [Nanoscience and Nanotechnology Graduate Program, Faculty of Science, King Mongkut’s University of Technology Thonburi, 10140, Bangkok (Thailand); Theoretical and Computational Science Center (TaCS), Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangkok 10140 (Thailand); Murray, Roy [Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States); Bah, Mohamed [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Tomakin, Murat [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Shah, S.Ismat, E-mail: ismat@udel.edu [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States)

    2017-02-28

    Graphical abstract: Scanning electron micrographs of the top view surfaces (left column) and cross sections of sputtered ZnO thin films prepared at various Ar:O{sub 2} ratios: (a) and (b) 10:0, (c) and (d) 7.5:2.5, (e) and (f) 5:5, (g) and (h) 2.5:7.5. - Highlights: • Nanocolumnar ZnO films were prepared by controlling the argon-oxygen sputtering gas ratio. • Oxygen partial pressure affects the band gap alignment of the ZnO films. • Optical transmission spectroscopy and XPS were used to study band gap shifts. - Abstract: We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O{sub 2} sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

  1. Single crystalline metal films as substrates for graphene growth

    Energy Technology Data Exchange (ETDEWEB)

    Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

    2017-11-15

    Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  3. Nanoscale size effects on the mechanical properties of platinum thin films and cross-sectional grain morphology

    KAUST Repository

    Abbas, K; Alaie, S; Ghasemi Baboly, M; Elahi, M M M; Anjum, Dalaver H.; Chaieb, Saharoui; Leseman, Z C

    2015-01-01

    -1700 MPa) are recorded and explained by the variable morphology. This work suggests that in addition to the in-plane grain size of thin films, the transitions in cross-sectional morphologies of the Pt films significantly affect their mechanical behavior.

  4. Substrate structure dependence of the growth modes of p-quaterphenyl thin films on gold

    International Nuclear Information System (INIS)

    Muellegger, S.; Mitsche, S.; Poelt, P.; Haenel, K.; Birkner, A.; Woell, C.; Winkler, A.

    2005-01-01

    The variably oriented crystallite surfaces of a recrystallized polycrystalline gold sample served as substrates for the investigation of the structure dependence of p-quaterphenyl (4P) thin film growth. The films were prepared in ultrahigh vacuum by organic molecular beam evaporation. Optical microscopy, scanning electron microscopy, combined with laterally resolved electron backscatter diffraction and scanning tunnelling microscopy have been applied to determine the correlation between the substrate surface structure and 4P film morphology. Crystallite surfaces consisting of (110) terraces favour highly anisotropic needle-like 4P growth with the needle orientation normal to the Au directions. Atomic steps on vicinal planes with narrow terraces (< 2 nm) can also induce anisotropy in the 4P thin film growth, in particular elongated 4P islands normal to the step direction. In contrast to that, a nearly isotropic distribution of the needle orientations is observed on Au grains terminated by highly symmetric (111) or (100) crystal planes. Additionally, patches of continuous 4P layers can be found on these surfaces. There is strong evidence that the 4P molecules within the needle-like crystallites are oriented parallel to the Au surface, whereas for the continuous layers the 4P molecules are oriented nearly upright on the surface

  5. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  6. Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

    International Nuclear Information System (INIS)

    Meral, Kadem; Arik, Mustafa; Onganer, Yavuz

    2016-01-01

    Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

  7. Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Meral, Kadem, E-mail: kademm@atauni.edu.tr; Arik, Mustafa, E-mail: marik@tatauni.edu.tr; Onganer, Yavuz, E-mail: yonganer@atauni.edu.tr [Department of Chemistry, Faculty of Sciences, Atatürk University, 25240 Erzurum (Turkey)

    2016-04-18

    Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

  8. Interfacial Effects on the Spherulitic Morphology of Isotactic Polystyrene Thin Films on Liquid Substrates

    Directory of Open Access Journals (Sweden)

    Takashi Sasaki

    2016-01-01

    Full Text Available The influence of interfaces on the morphology of flat spherulites of isotactic polystyrene (iPS grown in thin films on liquid substrates was investigated. Amorphous iPS thin films spin-cast from a solution were annealed for cold crystallization on glycerol and silicone oil (nonsolvents for iPS. The number density of grown spherulites was revealed to be higher on the glycerol substrate than on the silicone oil substrate. This implies that the primary nucleation rate of crystallization is greater at the iPS/glycerol interface than at the iPS/silicone oil interface. The results may be consistent with the previous findings that concern the molecular interaction between atactic polystyrene and nonsolvents at the interface. In some cases, holes were formed in the thin films during the cold crystallization due to dewetting, which also significantly affect the spherulite morphology via, for example, transcrystallization.

  9. Structure and Morphology Effects on the Optical Properties of Bimetallic Nanoparticle Films Laser Deposited on a Glass Substrate

    Directory of Open Access Journals (Sweden)

    A. O. Kucherik

    2017-01-01

    Full Text Available Moving nanosecond laser system is used for laser-assisted thermodiffusion deposition of metallic nanoparticles from water-based colloidal solutions. The results obtained for both gold and silver nanoparticles show that film morphology strongly depends on laser scanning speed and the number of passages. We show, furthermore, the possibility of producing bimetallic Au:Ag thin films by laser irradiation of the mixed solutions. As a result of several laser scans, granular nanometric films are found to grow with a well-controlled composition, thickness, and morphology. By changing laser scanning parameters, film morphology can be varied from island structures to quasi-periodic arrays. The optical properties of the deposited structures are found to depend on the film composition, thickness, and mean separation between the particles. The transparency spectra of the deposited films are shown to be defined by their morphology.

  10. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  11. Morphology-dependent photo-induced polarization recovery in ferroelectric thin films

    Science.gov (United States)

    Wang, J. Y.; Liu, G.; Sando, D.; Nagarajan, V.; Seidel, J.

    2017-08-01

    We investigate photo-induced ferroelectric domain switching in a series of Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 (PZT/LSMO) bilayer thin films with varying surface morphologies by piezoresponse force microscopy under light illumination. We demonstrate that reverse poled ferroelectric regions can be almost fully recovered under laser irradiation of the PZT layer and that the recovery process is dependent on the surface morphology on the nanometer scale. The recovery process is well described by the Kolmogorov-Avrami-Ishibashi model, and the evolution speed is controlled by light intensity, sample thickness, and initial write voltage. Our findings shed light on optical control of the domain structure in ferroelectric thin films with different surface morphologies.

  12. Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

    KAUST Repository

    Trinh, Cong; Whited, Matthew T.; Steiner, Andrew; Tassone, Christopher J.; Toney, Michael F.; Thompson, Mark E.

    2012-01-01

    We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz

  13. Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    Benny Joseph

    2008-01-01

    Full Text Available Thin films of Cobalt Phthalocyanine (CoPc are fabricated at a base pressure of 10-5 m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM, which show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are needle like, which are interconnected at high substrate temperatures. The optical band gap energy is almost same on substrate temperature variation. Trap energy levels are also observed for these films.

  14. Predictive modeling of nanoscale domain morphology in solution-processed organic thin films

    Science.gov (United States)

    Schaaf, Cyrus; Jenkins, Michael; Morehouse, Robell; Stanfield, Dane; McDowall, Stephen; Johnson, Brad L.; Patrick, David L.

    2017-09-01

    The electronic and optoelectronic properties of molecular semiconductor thin films are directly linked to their extrinsic nanoscale structural characteristics such as domain size and spatial distributions. In films prepared by common solution-phase deposition techniques such as spin casting and solvent-based printing, morphology is governed by a complex interrelated set of thermodynamic and kinetic factors that classical models fail to adequately capture, leaving them unable to provide much insight, let alone predictive design guidance for tailoring films with specific nanostructural characteristics. Here we introduce a comprehensive treatment of solution-based film formation enabling quantitative prediction of domain formation rates, coverage, and spacing statistics based on a small number of experimentally measureable parameters. The model combines a mean-field rate equation treatment of monomer aggregation kinetics with classical nucleation theory and a supersaturation-dependent critical nucleus size to solve for the quasi-two-dimensional temporally and spatially varying monomer concentration, nucleation rate, and other properties. Excellent agreement is observed with measured nucleation densities and interdomain radial distribution functions in polycrystalline tetracene films. Numerical solutions lead to a set of general design rules enabling predictive morphological control in solution-processed molecular crystalline films.

  15. Chitosan-Starch Films with Natural Extracts: Physical, Chemical, Morphological and Thermal Properties

    Directory of Open Access Journals (Sweden)

    Jessica I. Lozano-Navarro

    2018-01-01

    Full Text Available The aim of this study is to analyze the properties of a series of polysaccharide composite films, such as apparent density, color, the presence of functional groups, morphology, and thermal stability, as well as the correlation between them and their antimicrobial and optical properties. Natural antioxidants such as anthocyanins (from cranberry; blueberry and pomegranate; betalains (from beetroot and pitaya; resveratrol (from grape; and thymol and carvacrol (from oregano were added to the films. Few changes in the position and intensity of the FTIR spectra bands were observed despite the low content of extract added to the films. Due to this fact, the antioxidants were extracted and identified by spectroscopic analysis; and they were also quantified using the Folin-Denis method and a gallic acid calibration curve, which confirmed the presence of natural antioxidants in the films. According to the SEM analysis, the presence of natural antioxidants has no influence on the film morphology because the stretch marks and white points that were observed were related to starch presence. On the other hand, the TGA analysis showed that the type of extract influences the total weight loss. The overall interpretation of the results suggests that the use of natural antioxidants as additives for chitosan-starch film preparation has a prominent impact on most of the critical properties that are decisive in making them suitable for food-packing applications.

  16. Chitosan-Starch Films with Natural Extracts: Physical, Chemical, Morphological and Thermal Properties

    Science.gov (United States)

    Díaz-Zavala, Nancy P.; Melo-Banda, José A.; García-Alamilla, Ricardo; Martínez-Hernández, Ana L.; Zapién-Castillo, Samuel

    2018-01-01

    The aim of this study is to analyze the properties of a series of polysaccharide composite films, such as apparent density, color, the presence of functional groups, morphology, and thermal stability, as well as the correlation between them and their antimicrobial and optical properties. Natural antioxidants such as anthocyanins (from cranberry; blueberry and pomegranate); betalains (from beetroot and pitaya); resveratrol (from grape); and thymol and carvacrol (from oregano) were added to the films. Few changes in the position and intensity of the FTIR spectra bands were observed despite the low content of extract added to the films. Due to this fact, the antioxidants were extracted and identified by spectroscopic analysis; and they were also quantified using the Folin-Denis method and a gallic acid calibration curve, which confirmed the presence of natural antioxidants in the films. According to the SEM analysis, the presence of natural antioxidants has no influence on the film morphology because the stretch marks and white points that were observed were related to starch presence. On the other hand, the TGA analysis showed that the type of extract influences the total weight loss. The overall interpretation of the results suggests that the use of natural antioxidants as additives for chitosan-starch film preparation has a prominent impact on most of the critical properties that are decisive in making them suitable for food-packing applications. PMID:29329275

  17. Morphology modification of perovskite film by a simple post-treatment process in perovskite solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Song, J.; Yang, Y.; Zhao, Y.L., E-mail: sdyulong@cumt.edu.cn; Che, M.; Zhu, L.; Gu, X.Q.; Qiang, Y.H., E-mail: yhqiang@cumt.edu.cn

    2017-03-15

    Highlights: • Perovskite films were post-treated by DMF/CBZ, DMSO/CBZ, or GBL/CBZ blend solvents. • This process could repair pinholes and enhance coverage in perovskite film. • This technique could modify charge transfer process at TiO{sub 2}/perovskite interface. - Abstract: A homogenous perovskite thin film with high coverage is a determining factor for high performance perovskite solar cells. Unlike previous pre-treatments aiming at perovskite precursor, we proposed a simple method to modify the morphology of perovskite films by post-treatment process using mixed solvents of N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), or 1,4-butyrolactone (GBL) with chlorobenzene (CBZ) in this paper. As good solvent of perovskite, DMF, DMSO, and GBL could dissolve the formed perovskite film. Meanwhile, CBZ, anti-solvent of perovskite film, could decrease the dissolving capacity of these good solvents. Therefore, the perovskite film coverage might be improved by the partial dissolution and recrystallization after solvent post-treatment process. Electrochemical impedance spectrometry (EIS) and time-resolved photoluminescence (TRPL) indicated that this post-treatment process could enhance charge transfer at TiO{sub 2}/perovskite interface. Finally, the conversion efficiency increased from 10.10% to 11.82%, 11.68%, and 10.66% using perovskite films post-treated by DMF/CBZ, DMSO/CBZ, and GBL/CBZ blend solvents, respectively.

  18. Growth and magnetic structure of La0.67Sr0.33MnO3 films

    International Nuclear Information System (INIS)

    Brown, G.W.; Jia, Q.X.; Peterson, E.J.; Hristova, D.K.; Hundley, M.F.; Thompson, J.D.; Maggiore, C.J.; Tesmer, J.; Hawley, M.E.

    1997-01-01

    Growth of LaMnO 3 films that exhibit colossal magnetoresistance (CMR) has concentrated heavily on Ca doped materials. However, since the 33% Sr doped films are ferromagnetic at room temperature, they are ideal candidates for dual growth-magnetic structure studies using scanned probe techniques. In this study, interest was focused on the relations between growth/processing parameters, film morphology, and electronic/magnetic properties. In addition, films were grown on both LaAlO 3 (LAO) and SrTiO 3 (STO) to examine the results of stress induced by different substrate mismatches. La 0.67 Sr 0.33 MnO 3 (LSMO) was grown using pulsed laser deposition (PLD) at temperatures between 500 C and 800 C. The film microstructure, crystallinity, and magnetic and electrical properties were characterized by room temperature scanning tunneling microscopy (STM), atomic force microscopy (AFM), magnetic force microscopy (MFM), x-ray diffraction, and temperature dependent transport and magnetization measurements. The growth trends follow those previously reported for Ca doped films. Grains increase in size with increasing temperature and coalesce into extended layers after annealing. Although topographic contributions complicate interpretation of some MFM data, local magnetic structure observed here is generally associated with film defects

  19. A study of size dependent structure, morphology and luminescence behavior of CdS films on Si substrate

    International Nuclear Information System (INIS)

    Kaushik, Diksha; Singh, Ragini Raj; Sharma, Madhulika; Gupta, D.K.; Lalla, N.P.; Pandey, R.K.

    2007-01-01

    Size tunable cadmium sulfide (CdS) films deposited by a dip coating technique on silicon (100) and indium tin oxide/glass substrates have been characterized using X-ray diffraction, X-ray reflectivity, transmission electron microscopy, atomic force microscopy and photoluminescence spectroscopy. The structural characterization indicated growth of an oriented phase of cadmium sulfide. Transmission electron microscopy used to calculate the particle size indicated narrow size dispersion. The tendency of nanocrystalline CdS films to form ordered clusters of CdS quantum dots on silicon (100) substrate has been revealed by morphological studies using atomic force microscopy. The photoluminescence emission spectroscopy of the cadmium sulfide films has also been investigated. It is shown that the nanocrystalline CdS exhibit intense photoluminescence as compared to the large grained polycrystalline CdS films. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the observed photoluminescence behavior of CdS is substantially enhanced when the nanocrystallites are assembled on silicon (100) substrate

  20. Diffusion and crystal growth in plasma deposed thin ITO films

    International Nuclear Information System (INIS)

    Steffen, H.; Wulff, H.; Quaas, M.; Tun, Tin Maung.; Hipple, R.

    2000-01-01

    Tin-doped indium oxide (ITO) films were deposited by means of DC-planar magnetron sputtering. A metallic In/Sn (90/10) target an Ar/O 2 gas mixture were used. The oxygen flow was varied between 0 and 2 sccm. Substrate voltages between 0 and -100 V were used. With increasing oxygen flow film structure and composition change from crystalline metallic In/Sn to amorphous ITO. Simultaneously the deposition rate decreases and the film density increases. The diffusion of oxygen into metallic In/Sn films and the amorphous-to-crystalline transformation of ITO were studied using in situ grazing incidence X-ray diffractometry (GIXRD), grazing incidence reflectometry (GIXR), and AFM. From the X-ray integral intensities diffusion constants, activation energies of the diffusion, reaction order and activation energy of the crystal growth were extracted. (authors)

  1. Nanocrystalline SnO2 thin films: Structural, morphological, electrical transport and optical studies

    International Nuclear Information System (INIS)

    Sakhare, R.D.; Khuspe, G.D.; Navale, S.T.; Mulik, R.N.; Chougule, M.A.; Pawar, R.C.; Lee, C.S.; Sen, Shashwati; Patil, V.B.

    2013-01-01

    Highlights: ► Novel chemical route of synthesis of SnO 2 films. ► Physical properties SnO 2 are influenced by process temperature. ► The room temperature electrical conductivity of SnO 2 is of 10 −7 –10 −5 (Ω cm) −1 . ► SnO 2 exhibit high absorption coefficient (10 4 cm −1 ). -- Abstract: Sol–gel spin coating method has been successfully employed for preparation of nanocrystalline tin oxide (SnO 2 ) thin films. The effect of processing temperature on the structure, morphology, electrical conductivity, thermoelectric power and band gap was studied using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction pattern, atomic force microscopy, two probe technique and UV–visible spectroscopy. X-ray diffraction (XRD) analysis showed that SnO 2 films are crystallized in the tetragonal phase and present a random orientation. Field emission scanning electron microscopy (FESEM) analysis revealed that surface morphology of the tin oxide film consists nanocrystalline grains with uniform coverage of the substrate surface. Transmission electron microscopy (TEM) of SnO 2 film showed nanocrystals having diameter ranging from 5 to 10 nm. Selected area electron diffraction (SAED) pattern confirms tetragonal phase evolution of SnO 2 . Atomic force microscopy (AFM) analysis showed surface morphology of SnO 2 film is smooth. The dc electrical conductivity showed the semiconducting nature with room temperature electrical conductivity increased from 10 −7 to 10 −5 (Ω cm) −1 as processing temperature increased from 400 to 700 °C. Thermo power measurement confirms n-type conduction. The band gap energy of SnO 2 film decreased from 3.88 to 3.60 eV as processing temperature increased from 400 to 700 °C

  2. Time-dependent changes in the growth of ultrathin ionic liquid films on Ag(111).

    Science.gov (United States)

    Lexow, Matthias; Talwar, Timo; Heller, Bettina S J; May, Benjamin; Bhuin, Radha G; Maier, Florian; Steinrück, Hans-Peter

    2018-05-09

    Various amounts of the ionic liquids (ILs) [C1C1Im][Tf2N] and [C8C1Im][Tf2N] were deposited in vacuo by physical vapour deposition (PVD) on single crystalline Ag(111) at room temperature and subsequently monitored by angle-resolved X-ray photoelectron spectroscopy (ARXPS) as a function of time. For very low coverages of up to one closed molecular layer, an initial wetting layer was rapidly formed for both ILs. Deposition of higher amounts of [C1C1Im][Tf2N] revealed an initial three-dimensional film morphology. On the time scale of hours, characteristic changes of the XPS signals were observed. These are interpreted as island spreading and a transformation towards a nearly two dimensional [C1C1Im][Tf2N] film as the final state. In contrast, a film morphology close to 2D was found from the very beginning for [C8C1Im][Tf2N] deposited on Ag(111) demonstrating the influence of the alkyl chain length on the growth kinetics. These studies also highlight the suitability of time-resolved ARXPS for the investigation of IL/solid interfaces, which play a crucial role in IL thin film applications such as in catalysis, sensor, lubrication, and coating technologies.

  3. Surface morphology and preferential orientation growth of TaC crystals formed by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiong Xiang, E-mail: Xiong228@sina.co [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China); Chen Zhaoke; Huang Baiyun; Li Guodong [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China); Zheng Feng [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Xiao Peng; Zhang Hongbo [State Key Lab for Powder Metallurgy, Central South University, Changsha 410083 (China)

    2009-04-02

    TaC film was deposited on (002) graphite sheet by isothermal chemical vapor deposition using TaCl{sub 5}-Ar-C{sub 3}H{sub 6} mixtures, with deposition temperature 1200 {sup o}C and pressure about 200 Pa. The influence of deposition position (or deposition rate) on preferential orientation and surface morphology of TaC crystals were investigated by X-ray diffraction and scanning electron microscopy methods. The deposits are TaC plus trace of C. The crystals are large individual columns with pyramidal-shape at deposition rate of 32.4-37.3 {mu}m/h, complex columnar at 37.3-45.6 {mu}m/h, lenticular-like at 45.6-54.6 {mu}m/h and cauliflower-like at 54.6-77.3 {mu}m/h, with <001>, near <001>, <110> and no clear preferential orientation, respectively. These results agree in part with the preditions of the Pangarov's model of the relationship between deposition rate and preferential growth orientation. The growth mechanism of TaC crystals in <001>, near <001>, <111> and no clear preferential orientation can be fairly explained by the growth parameter {alpha} with Van der Drift's model, deterioration model and Meakin model. Furthermore, a nucleation and coalescence model is also proposed to explain the formation mechanism of <110> lenticular-like crystals.

  4. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  5. Optimizing growth conditions for electroless deposition of Au films ...

    Indian Academy of Sciences (India)

    Unknown

    Optimizing growth conditions for electroless deposition of Au films on. Si(111) substrates. BHUVANA and G U KULKARNI*. Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for. Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India. MS received 24 March 2006.

  6. Intermediate surface structure between step bunching and step flow in SrRuO3 thin film growth

    Science.gov (United States)

    Bertino, Giulia; Gura, Anna; Dawber, Matthew

    We performed a systematic study of SrRuO3 thin films grown on TiO2 terminated SrTiO3 substrates using off-axis magnetron sputtering. We investigated the step bunching formation and the evolution of the SRO film morphology by varying the step size of the substrate, the growth temperature and the film thickness. The thin films were characterized using Atomic Force Microscopy and X-Ray Diffraction. We identified single and multiple step bunching and step flow growth regimes as a function of the growth parameters. Also, we clearly observe a stronger influence of the step size of the substrate on the evolution of the SRO film surface with respect to the other growth parameters. Remarkably, we observe the formation of a smooth, regular and uniform ``fish skin'' structure at the transition between one regime and another. We believe that the fish skin structure results from the merging of 2D flat islands predicted by previous models. The direct observation of this transition structure allows us to better understand how and when step bunching develops in the growth of SrRuO3 thin films.

  7. Laser-tissue soldering with biodegradable polymer films in vitro: film surface morphology and hydration effects.

    Science.gov (United States)

    Sorg, B S; Welch, A J

    2001-01-01

    Previous research introduced the concept of using biodegradable polymer film reinforcement of a liquid albumin solder for improvement of the tensile strength of repaired incisions in vitro. In this study, the effect of creating small pores in the PLGA films on the weld breaking strength is studied. Additionally, the effect of hydration on the strength of the reinforced welds is investigated. A 50%(w/v) bovine serum albumin solder with 0.5 mg/mL Indocyanine Green dye was used to repair an incision in bovine aorta. The solder was coagulated with an 806-nm CW diode laser. A poly(DL-lactic-co-glycolic acid) (PLGA) film was used to reinforce the solder (the controls had solder but no reinforcement). Breaking strengths were measured acutely and after hydration in saline for 1 and 2 days. The data were analyzed by ANOVA (P < 0.05) and multiple comparisons of means were performed using the Newman-Keuls test. The creation of pores in the PLGA films qualitatively improved the film flexibility without having an apparent adverse effect on the breaking strength, while the actual technique of applying the film and solder had more of an effect. The acute maximum average breaking strengths of some of the film reinforced specimens (114.7 g-134.4 g) were significantly higher (P < 0.05) than the acute maximum average breaking strength of the unreinforced control specimens (68.3 g). Film reinforced specimens were shown to have a statistically significantly higher breaking strength than unreinforced controls after 1- and 2-day hydration. Reinforcement of liquid albumin solders in laser-assisted incision repair appears to have advantages over conventional methods that do not reinforce the cohesive strength of the solder in terms of acute breaking strength and after immersion in moist environments for short periods of time. Using a film with the solder applied to one surface only may be advantageous over other techniques.

  8. Role of substrate morphology in ion induced dewetting of thin solid films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto, Luca, E-mail: luca.repetto@unige.it [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Lo Savio, Roberto [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, Barbara [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, Giuseppe; Valbusa, Ugo [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2014-10-01

    Highlights: • We have created by ion bombardment silicon substrates with different topographies. • The substrates have been characterized by ellipsometry, AFM, SEM and EDX. • The substrates have been used for experiments of ion induced Cr films. • We show that different substrate topographies can induce different dewetted patterns. • Substrate topography can favor spinodal dewetting against heterogeneous nucleations. - Abstract: We investigate the role of the substrate morphology in the dewetting of ultrathin chromium films irradiated with 30 keV Ga ions. Silicon surfaces with different roughness were used as substrates for the films. The results of the irradiation experiments and of related simulations indicate that the chromium films can undergo a dewetting-like process through the two standard channels that show up for liquids, namely the spinodal channel, and the dewetting by heterogeneous nucleation. The two processes are competitive, and the prevailing one can be predicted and selected according to the characteristics of the substrate.

  9. Role of substrate morphology in ion induced dewetting of thin solid films

    International Nuclear Information System (INIS)

    Repetto, Luca; Lo Savio, Roberto; Šetina Batič, Barbara; Firpo, Giuseppe; Valbusa, Ugo

    2014-01-01

    Highlights: • We have created by ion bombardment silicon substrates with different topographies. • The substrates have been characterized by ellipsometry, AFM, SEM and EDX. • The substrates have been used for experiments of ion induced Cr films. • We show that different substrate topographies can induce different dewetted patterns. • Substrate topography can favor spinodal dewetting against heterogeneous nucleations. - Abstract: We investigate the role of the substrate morphology in the dewetting of ultrathin chromium films irradiated with 30 keV Ga ions. Silicon surfaces with different roughness were used as substrates for the films. The results of the irradiation experiments and of related simulations indicate that the chromium films can undergo a dewetting-like process through the two standard channels that show up for liquids, namely the spinodal channel, and the dewetting by heterogeneous nucleation. The two processes are competitive, and the prevailing one can be predicted and selected according to the characteristics of the substrate

  10. Effect of Etching on the Optical, Morphological Properties of Ag Thin Films for SERS Active Substrates

    Directory of Open Access Journals (Sweden)

    Desapogu Rajesh

    2013-01-01

    Full Text Available Structural, optical, and morphological properties of Ag thin films before and after etching were investigated by using X-ray diffraction, UV-Vis spectrophotometer, and field emission scanning electron microscopy (FESEM. The HNO3 roughened Ag thin films exhibit excellent enhancement features and better stability than pure Ag thin films. Further, the Ag nanostructures are covered with Rhodamine 6G (Rh6G and then tested with surface enhanced raman spectroscopy (SERS for active substrates. Etched Ag films were found to exhibit a strong SERS effect and excellent thermal stability. Hence, the present method is found to be useful in the development of plasmon-based analytical devices, especially SERS-based biosensors.

  11. A study of growth and thermal dewetting behavior of ultra-thin gold films using transmission electron microscopy

    Directory of Open Access Journals (Sweden)

    Sudheer

    2017-07-01

    Full Text Available The growth and solid-state dewetting behavior of Au thin films (0.7 to 8.4 nm deposited on the formvar film (substrate by sputtering technique have been studied using transmission electron microscopy. The size and number density of the Au nanoparticles (NPs change with an increase in the film thickness (0.7 to 2.8 nm. Nearly spherical Au NPs are obtained for 6 nm show capability to be used as an irreversible temperature sensor with a sensitivity of ∼0.1 CAF/°C. It is observed that annealing affects the crystallinity of the Au grains in the films. The electron diffraction measurement also shows annealing induced morphological evolution in the percolated Au thin films (≥3 nm during solid-state dewetting and recrystallization of the grains.

  12. Effect of annealing time on morphological characteristics of Ba(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Anicete-Santos, M.; Pontes, F.M.; Souza, I.A.; Santos, L.P.S.; Rosa, I.L.V.; Santos, M.R.M.C.; Santos-Junior, L.S.; Leite, E.R.; Longo, E.

    2007-01-01

    Ba(Zr 0.50 Ti 0.50 )O 3 thin films were prepared by the polymeric precursor method using the annealing low temperature of 300 o C for 8, 16, 24, 48, 96 and 192h in a furnace tube with oxygen atmosphere. The X-ray diffraction patterns revealed that the film annealed for 192 h presented some crystallographic planes (1bar 0bar 0) (1bar 1bar 0) and (2bar 0bar 0) in its crystalline lattice. Fourier transformed infrared presented the formation of metal-oxygen stretching at around 756cm -1 . The atomic force microscopy analysis presented the growth of granules in the Ba(Zr 0.50 Ti 0.50 )O 3 films annealed from 8 to 96h. The crystalline film annealed for 192h already presents grains in its perovskite structure. It evidenced a reduction in the thickness of the thin films with the increase of the annealing time

  13. Room temperature growth of nanocrystalline anatase TiO{sub 2} thin films by dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Preetam, E-mail: preetamphy@gmail.co [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Kaur, Davinder [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

    2010-03-01

    We report, the structural and optical properties of nanocrystalline anatase TiO{sub 2} thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO{sub 2} film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO{sub 2} films for device applications with different refractive index, by changing the deposition parameters.

  14. In situ morphology studies of the mechanism for solution additive effects on the formation of bulk heterojunction films

    KAUST Repository

    Richter, Lee J.

    2014-09-29

    The most successful active film morphology in organic photovoltaics is the bulk heterojunction (BHJ). The performance of a BHJ arises from a complex interplay of the spatial organization of the segregated donor and acceptor phases and the local order/quality of the respective phases. These critical morphological features develop dynamically during film formation, and it has become common practice to control them by the introduction of processing additives. Here, in situ grazing incidence X-ray diffraction (GIXD) and grazing incidence small angle X-ray scattering (GISAXS) studies of the development of order in BHJ films formed from the donor polymer poly(3-hexylthiophene) and acceptor phenyl-C61-butyric acid methyl ester under the influence of two common additives, 1,8-octanedithiol and 1-chloronaphthalene, are reported. By comparing optical aggregation to crystallization and using GISAXS to determine the number and nature of phases present during drying, two common mechanisms by which the additives increase P3HT crystallinity are identified. Additives accelerate the appearance of pre-crystalline nuclei by controlling solvent quality and allow for extended crystal growth by delaying the onset of PCBM-induced vitrification. The glass transition effects vary system-to-system and may be correlated to the number and composition of phases present during drying. Synchrotron X-ray scattering measurements of nanoscale structure evolution during the drying of polymer-fullerene photovoltaic films are described. Changes in the number and nature of phases, as well as the order within them, reveals the mechanisms by which formulation additives promote structural characteristics leading to higher power conversion efficiencies.

  15. In situ morphology studies of the mechanism for solution additive effects on the formation of bulk heterojunction films

    KAUST Repository

    Richter, Lee J.; DeLongchamp., Dean M.; Bokel, Felicia A.; Engmann, Sebastian; Chou, Kang Wei; Amassian, Aram; Schaible, Eric G.; Hexemer, Alexander

    2014-01-01

    The most successful active film morphology in organic photovoltaics is the bulk heterojunction (BHJ). The performance of a BHJ arises from a complex interplay of the spatial organization of the segregated donor and acceptor phases and the local order/quality of the respective phases. These critical morphological features develop dynamically during film formation, and it has become common practice to control them by the introduction of processing additives. Here, in situ grazing incidence X-ray diffraction (GIXD) and grazing incidence small angle X-ray scattering (GISAXS) studies of the development of order in BHJ films formed from the donor polymer poly(3-hexylthiophene) and acceptor phenyl-C61-butyric acid methyl ester under the influence of two common additives, 1,8-octanedithiol and 1-chloronaphthalene, are reported. By comparing optical aggregation to crystallization and using GISAXS to determine the number and nature of phases present during drying, two common mechanisms by which the additives increase P3HT crystallinity are identified. Additives accelerate the appearance of pre-crystalline nuclei by controlling solvent quality and allow for extended crystal growth by delaying the onset of PCBM-induced vitrification. The glass transition effects vary system-to-system and may be correlated to the number and composition of phases present during drying. Synchrotron X-ray scattering measurements of nanoscale structure evolution during the drying of polymer-fullerene photovoltaic films are described. Changes in the number and nature of phases, as well as the order within them, reveals the mechanisms by which formulation additives promote structural characteristics leading to higher power conversion efficiencies.

  16. Morphology and swelling of Os(II) polyvinyl-bypyridile films

    International Nuclear Information System (INIS)

    Ybarra, G.; Moina, C.; Molina, F.V.; Florit, M.I.; Posadas, D.

    2005-01-01

    In this work, we studied the changes in volume of an electroactive polymer as [Os(bipy) 2 (PVP) 10 Cl] 2+ . The dependence of the polymer volume on the solution pH and applied potential was measured. The morphology of [Os(bipy) 2 (PVP) 10 Cl] 2+ , deposited onto monocrystalline Si substrates, both by drop coating and by spin coating was studied by AFM. Drop-coated films show a globular structure on top of a thin and homogeneous film while spin-coated films are even and homogeneous. The volume changes with the pH of the external solution were measured following the changes in the globules size of drop-coated films. Also, the thickness dependence of spin-coated films on pH was measured by AFM. Both the size of the globules and the thickness of the films increase as the pH of the external solution decreases. The possible reasons for this increase are discussed. The volume change following the oxidation of a drop-coated polymer was estimated from the projected area obtained by optical microscopy with image capture. The images show an increase in the projected area as the film is progressively oxidized. The possible reasons for this increase in volume are discussed

  17. Pathways to Mesoporous Resin/Carbon Thin Films with Alternating Gyroid Morphology

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Qi [Department; Matsuoka, Fumiaki [Department; Suh, Hyo Seon [Institute; Materials; Beaucage, Peter A. [Department; Xiong, Shisheng [Institute; Materials; Smilgies, Detlef-M. [Cornell; Tan, Kwan Wee [Department; School; Werner, Jörg G. [Department; Nealey, Paul F. [Institute; Materials; Wiesner, Ulrich B. [Department

    2017-12-19

    Three-dimensional (3D) mesoporous thin films with sub-100 nm periodic lattices are of increasing interest as templates for a number of nanotechnology applications, yet are hard to achieve with conventional top-down fabrication methods. Block copolymer self-assembly derived mesoscale structures provide a toolbox for such 3D template formation. In this work, single (alternating) gyroidal and double gyroidal mesoporous thin-film structures are achieved via solvent vapor annealing assisted co-assembly of poly(isoprene-block-styrene-block-ethylene oxide) (PI-b-PS-b-PEO, ISO) and resorcinol/phenol formaldehyde resols. In particular, the alternating gyroid thin-film morphology is highly desirable for potential template backfilling processes as a result of the large pore volume fraction. In situ grazing-incidence small-angle X-ray scattering during solvent annealing is employed as a tool to elucidate and navigate the pathway complexity of the structure formation processes. The resulting network structures are resistant to high temperatures provided an inert atmosphere. The thin films have tunable hydrophilicity from pyrolysis at different temperatures, while pore sizes can be tailored by varying ISO molar mass. A transfer technique between substrates is demonstrated for alternating gyroidal mesoporous thin films, circumventing the need to re-optimize film formation protocols for different substrates. Increased conductivity after pyrolysis at high temperatures demonstrates that these gyroidal mesoporous resin/carbon thin films have potential as functional 3D templates for a number of nanomaterials applications.

  18. Morphology and thermal properties of PLA films plasticized with aliphatic oligoesters

    International Nuclear Information System (INIS)

    Inacio, Erika M.; Dias, Marcos L.; Lima, Maria Celiana P.

    2015-01-01

    The addition of plasticizers to poly(lactic acid) (PLA) is one of the known ways of changing its ductility, making possible the modification of its mechanical and thermal properties. In this work, it was synthesized two biodegradable aliphatic oligoesters: oligo(trimethylene sebacate) (OST) and oligo(trimethylene malonate) (OMT), and these oligomers were used as plasticizer in cast films of commercial film grade PLA at concentrations of 1, 5 and 10 wt% of each plasticizer. X-ray diffraction (XRD) was used to investigate the morphology and differential scanning calorimetry (DSC) was also used aiming the evaluation of the thermal properties of these films. The PLA films containing no plasticizer showed an amorphous behavior, and the addition of PMT on the PLA films acted, simultaneously, decreasing the Tg, and rising the material's crystallinity. In contrast, the increased addition of OST to the PLA films did not change the Tg, and equally, did not have a significant changes in the material's crystallinity. Therefore, it was possible to observe the effect of the concentration of oligomers on the crystallinity of the films as well as the no plasticizer effect of the OST. (author)

  19. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  20. Morphological Evolution of Gyroid-Forming Block Copolymer Thin Films with Varying Solvent Evaporation Rate.

    Science.gov (United States)

    Wu, Yi-Hsiu; Lo, Ting-Ya; She, Ming-Shiuan; Ho, Rong-Ming

    2015-08-05

    In this study, we aim to examine the morphological evolution of block copolymer (BCP) nanostructured thin films through solvent evaporation at different rates for solvent swollen polystyrene-block-poly(l-lactide) (PS-PLLA). Interesting phase transitions from disorder to perpendicular cylinder and then gyroid can be found while using a partially selective solvent for PS to swell PS-PLLA thin film followed by solvent evaporation. During the transitions, gyroid-forming BCP thin film with characteristic crystallographic planes of (111)G, (110)G, and (211)G parallel to air surface can be observed, and will gradually transform into coexisting (110)G and (211)G planes, and finally transforms to (211)G plane due to the preferential segregation of constituted block to the surface (i.e., the thermodynamic origin for self-assembly) that affects the relative amount of each component at the air surface. With the decrease on the evaporation rate, the disorder phase will transform to parallel cylinder and then directly to (211)G without transition to perpendicular cylinder phase. Most importantly, the morphological evolution of PS-PLLA thin films is strongly dependent upon the solvent removal rate only in the initial stage of the evaporation process due to the anisotropy of cylinder structure. Once the morphology is transformed back to the isotropic gyroid structure after long evaporation, the morphological evolution will only relate to the variation of the surface composition. Similar phase transitions at the substrate can also be obtained by controlling the ratio of PLLA-OH to PS-OH homopolymers to functionalize the substrate. As a result, the fabrication of well-defined nanostructured thin films with controlled orientation can be achieved by simple swelling and deswelling with controlled evaporation rate.

  1. Interfacial morphologies and growth modes of F.C.C. metallic crystals from liquid alloys

    International Nuclear Information System (INIS)

    Camel, Denis

    1980-01-01

    Equilibrium and growth morphologies of f.c.c. metallic crystals in contact with liquid alloys have been observed in-situ using transmission electron microscopy. These morphologies have been discussed in terms of atomic interfacial structure and growth mechanisms with the help of a statistical thermodynamic model which takes into account the effects of chemical interactions and interfacial adsorption. (author) [fr

  2. Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

    International Nuclear Information System (INIS)

    Hemmous, M.; Layadi, A.; Guittoum, A.; Souami, N.; Mebarki, M.; Menni, N.

    2014-01-01

    Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al 2 O 3 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni–Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t Cr , then stress is relieved and grain size increases. All these results will be discussed and correlated. - Highlights: • The structural and electrical properties of evaporated Ni thin films are studied. • The effect of thickness, substrates and Cu underlayer is investigated. • Texture, grain size, strain and surface morphology are discussed. • Growth modes are described as a function of Ni thickness

  3. Magnesium growth in magnesium deuteride thin films during deuterium desorption

    Energy Technology Data Exchange (ETDEWEB)

    Checchetto, R., E-mail: riccardo.checchetto@unitn.it [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Miotello, A. [Dipartimento di Fisica and CNISM, Università di Trento, Via Sommarive 14, I-38123 Trento (Italy); Mengucci, P.; Barucca, G. [Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, Università Politecnica delle Marche, I-60131 Ancona (Italy)

    2013-12-15

    Highlights: ► Highly oriented Pd-capped magnesium deuteride thin films. ► The MgD{sub 2} dissociation was studied at temperatures not exceeding 100 °C. ► The structure of the film samples was analyzed by XRD and TEM. ► The transformation is controlled by the re-growth velocity of the Mg layers. ► The transformation is thermally activated, activation energy value of 1.3 ± 0.1 eV. -- Abstract: Pd- capped nanocrystalline magnesium thin films having columnar structure were deposited on Si substrate by e-gun deposition and submitted to thermal annealing in D{sub 2} atmosphere to promote the metal to deuteride phase transformation. The kinetics of the reverse deuteride to metal transformation was studied by Thermal Desorption Spectroscopy (TDS) while the structure of the as deposited and transformed samples was analyzed by X-rays diffraction and Transmission Electron Microscopy (TEM). In Pd- capped MgD{sub 2} thin films the deuteride to metal transformation begins at the interface between un-reacted Mg and transformed MgD{sub 2} layers. The D{sub 2} desorption kinetics is controlled by MgD{sub 2}/Mg interface effects, specifically the re-growth velocity of the Mg layers. The Mg re-growth has thermally activated character and shows an activation energy value of 1.3 ± 0.1 eV.

  4. Giant secondary grain growth in Cu films on sapphire

    Directory of Open Access Journals (Sweden)

    David L. Miller

    2013-08-01

    Full Text Available Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach that is both simpler to implement and produces superior results: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on α-Al2O3(0001 can be transformed into Cu(111 with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.

  5. Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

    Energy Technology Data Exchange (ETDEWEB)

    Villalpando, I. [Centro de Investigacion de los Recursos Naturales, Antigua Normal Rural, Salaices, Lopez, Chihuahua (Mexico); John, P.; Wilson, J. I. B., E-mail: isaelav@hotmail.com [School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14-4AS (United Kingdom)

    2017-11-01

    The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

  6. Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

    International Nuclear Information System (INIS)

    Villalpando, I.; John, P.; Wilson, J. I. B.

    2017-01-01

    The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

  7. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  8. Morphology and structural studies of WO{sub 3} films deposited on SrTiO{sub 3} by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kalhori, Hossein, E-mail: h.kalhori@ph.iut.ac.ir [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Department of Physics, Isfahan University of Technology, Isfahan 84156-8311 (Iran, Islamic Republic of); Porter, Stephen B.; Esmaeily, Amir Sajjad; Coey, Michael [School of Physics and CRANN, Trinity College, Dublin 2 (Ireland); Ranjbar, Mehdi; Salamati, Hadi [Department of Physics, Isfahan University of Technology, Isfahan 84156-8311 (Iran, Islamic Republic of)

    2016-12-30

    Highlights: • Highly oriented WO{sub 3} stoichiometric films were determined using pulsed laser deposition method. • Effective parameters on thin films including temperature, oxygen partial pressure and laser energy fluency was studied. • A phase transition was observed in WO{sub 3} films at 700 °C from monoclinic to tetragonal. - Abstract: WO{sub 3} films have been grown by pulsed laser deposition on SrTiO{sub 3} (001) substrates. The effects of substrate temperature, oxygen partial pressure and energy fluence of the laser beam on the physical properties of the films were studied. Reflection high-energy electron diffraction (RHEED) patterns during and after growth were used to determine the surface structure and morphology. The chemical composition and crystalline phases were obtained by XPS and XRD respectively. AFM results showed that the roughness and skewness of the films depend on the substrate temperature during deposition. Optimal conditions were determined for the growth of the highly oriented films.

  9. Morphology and growth of titania nanotubes. Nanostructuring and applications

    Energy Technology Data Exchange (ETDEWEB)

    Albu, Sergiu P.

    2012-10-26

    Self-ordering phenomena during anodic oxidation of metals and the formation of porous oxides have been of a great interest to science and technology for more than 50 years. Particularly, after Masuda et al. demonstrated ideally ordered porous alumina by fine tuning the experimental parameters during aluminum anodization, these structures were increasingly used as a template for the deposition and growth of large varieties of 1D functional materials. For some time, such self-organized oxide structures seemed to be limited to Al{sub 2}O{sub 3}, but in 1999 Zwilling et al. reported self-organized oxide structures (aligned nanotubes) anodically grown on Ti in a dilute fluoride solution. Dilute fluoride electrolytes were then found suitable to grow ordered tubular or porous oxides on a large range of other metals and alloys. Subsequently, the control over the morphology (diameter, length, smoothness of the walls) was strongly improved by continuously optimizing the anodizing conditions. Most research work has been directed towards TiO{sub 2} nanotubes, as TiO{sub 2} with its semiconductive nature makes the nanotubular structures promising for use in solar cells, photocatalysis and sensors, and also its ion insertion properties and its high degree of biocompatibility have attracted wide interest. The experimental optimization of growth parameters led to various semi-quantitative or qualitative models that provide a mechanistic reasoning for the occurrence of self-organization. Although theoretical modeling of self-ordered structures grown anodically on valve metals was increasingly refined, a main source of difficulty remained, namely the multitude of experimental factors which influence the growth of self-ordered nanostructures. The present work represents an attempt to provide a detailed experimental view over the growth of TiO{sub 2} nanotubes in organic electrolytes. The first part is based on describing the methods and set-ups used for growth and characterization of

  10. Growth and characterisation of potentiostatically electrodeposited Cu2O and Cu thin films

    International Nuclear Information System (INIS)

    Wijesundera, R.P.; Hidaka, M.; Koga, K.; Sakai, M.; Siripala, W.

    2006-01-01

    Cuprous oxide and copper thin films were potentiostatically electrodeposited in an acetate bath. Voltammetric curves were used to investigate the growth parameters; deposition potential, pH and temperature of the bath. Deposition potential dependency on the structural, morphological, optical and electronic properties of the films were investigated by the X-ray diffraction measurements, scanning electron micrographs, absorption measurements and dark and light current-voltage characterisations. It was observed that single phase polycrystalline Cu 2 O can be deposited from 0 to - 300 mV Vs saturated calomel electrode (SCE) and co-deposition of Cu and Cu 2 O starts at - 400 mV Vs SCE. Further increase in deposition potential from - 700 mV Vs SCE produces single phase Cu thin films. Single phase polycrystalline Cu 2 O thin films with cubic grains of 1-2 μm can be possible within the very narrow potential domain around - 200 mV Vs SCE. Enhanced photoresponse in a photoelectrochemical cell is produced by the Cu 2 O thin film prepared at - 400 mV Vs SCE, where Cu is co-deposited with Cu 2 O with random distribution of Cu spheres on the Cu 2 O surface. This study reveals that a single deposition bath can be used to deposit both Cu and Cu 2 O separately and an admixture of Cu-Cu 2 O by controlling the deposition parameters

  11. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  12. Diamond film growth with modification properties of adhesion between substrate and diamond film

    Directory of Open Access Journals (Sweden)

    Setasuwon P.

    2004-03-01

    Full Text Available Diamond film growth was studied using chemical vapor deposition (CVD. A special equipment was build in-house, employing a welding torch, and substrate holder with a water-cooling system. Acetylene and oxygen were used as combustion gases and the substrate was tungsten carbide cobalt. It was found that surface treatments, such as diamond powder scratching or acid etching, increase the adhesion and prevent the film peel-off. Diamond powder scratching and combined diamond powder scratching with acid etching gave the similar diamond film structure with small grain and slightly rough surface. The diamond film obtained with both treatments has high adhesion and can withstand internal stress better than ones obtained by untreated surface or acid etching alone. It was also found that higher substrate temperature produced smoother surface and more uniform diamond grain.

  13. Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schaffner, J., E-mail: jschaffner@surface.tu-darmstadt.de; Feldmeier, E.; Swirschuk, A.; Schimper, H.-J.; Klein, A.; Jaegermann, W.

    2011-08-31

    The growth of CdS thin films by close space sublimation (CSS) has been systematically studied using an ultra-high vacuum system known as DAISY-SOL in order to understand the basic growth mechanisms and their impact on the film properties. Substrate temperature and deposition rate were varied, and the surface properties of the CdS layer were determined by photoelectron spectroscopy (XPS) without breaking the vacuum. To analyze the influence of the deposition conditions on the layer morphology and crystallographic structure, the films were further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The SEM and AFM studies show a correlation between the deposition rate and the film morphology. For high deposition rates, edged grain shapes and smoother surfaces were observed than for low deposition rates. CdS films were deposited onto two different commercially available fluorine-doped tin oxide (FTO) substrates. XRD studies show that a high <200> texture of the FTO substrate prefers the CdS growth in <0001> orientation of the hexagonal crystal modification.

  14. Structure and morphology of pentacene thin films - from sub-monolayers to application relevant multilayers

    International Nuclear Information System (INIS)

    Resel, R.; Werzer, O.; Nabok, D.; Puschnig, P.; Ambrosch-Draxl, C.; Smilgies, D.; Haase, A.; Stadlober, B.

    2008-01-01

    Full text: The conjugated molecule pentacene is one of the most prominent material for application in organic thin film transistors. Charge carrier mobilities of about 1 cm 2 /Vs are realized in different device geometries which are used in integrated circuits. The device performance depends on the detailed structure and morphology of the pentacene thin films. This work presents an combined atomic force microscopy / x-ray scattering study on the formation of pentacene thin films starting from sub-monolayer coverage to the first closed monolayer to finally multilayer structures as they are used in device structures. Thin films of pentacene are prepared on oxidized silicon wafer with nominal thicknesses between 0.2 nm up to 180 nm. The films are investigated ex-situ by x-ray reflectivity and grazing incidence diffraction. In the sub-monolayer regime the formation of separated islands with up-right standing molecules are observed. The islands show typically dendritic shape with a separation of 2 μm from each other. With increasing coverage the dendritic islands coalescent until the first monolayer closes. Fitting of the x-ray reflectivity reveals that an additional layer between the substrate and the up-right standing pentacene molecules is present. During the formation of the second monolayer crystalline islands are formed. The crystallites grow in lateral and vertical size with increasing film thickness. The crystal structure of pentacene within the films is a surface induced phase. The crystal structure of this metastable phase could be solved by a combined experimental and theoretical approach. At a nominal film thickness of about 40 nm the equilibrium bulk structure of pentacene appears; both phases remain existent up the thickest films investigated in this study. (author)

  15. Structural, morphological, optical and photoluminescence properties of HfO2 thin films

    International Nuclear Information System (INIS)

    Ma, C.Y.; Wang, W.J.; Wang, J.; Miao, C.Y.; Li, S.L.; Zhang, Q.Y.

    2013-01-01

    Nanocrystalline monoclinic HfO 2 films with an average crystal size of 4.2–14.8 nm were sputter deposited under controlled temperatures and their structural characteristics and optical and photoluminescence properties have been evaluated. Structural investigations indicate that monoclinic HfO 2 films grown at higher temperatures above 400 °C are highly oriented along the (− 111) direction. The lattice expansion increases with diminishing HfO 2 crystalline size below 6.8 nm while maximum lattice expansion occurs with highly oriented monoclinic HfO 2 of crystalline size about 14.8 nm. The analysis of atomic force microscopy shows that the film growth at 600 °C can be attributed to the surface-diffusion-dominated growth. The intensity of the shoulderlike band that initiates at ∼ 5.7 eV and saturates at 5.94 eV shows continued increase with increasing crystalline size, which is intrinsic to nanocrystalline monoclinic HfO 2 films. Optical band gap varies in the range 5.40 ± 0.03–5.60 ± 0.03 eV and is slightly decreased with the increase in crystalline size. The luminescence band at 4.0 eV of HfO 2 films grown at room temperature can be ascribed to the vibronic transition of excited OH · radical while the emission at 3.2–3.3 eV for the films grown at all temperatures was attributed to the radiative recombination at impurity and/or defect centers. - Highlights: • Nanocrystalline monoclinic HfO 2 films were sputter deposited. • Structural, optical and photoluminescence properties were studied. • To analyze the scaling behavior using the power spectral density • Optical and photoluminescence properties strongly depend on film growth temperature

  16. Solution growth, characterization and applications of zinc sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ndukwe, I C [School of Physical Sciences, Abia State University, Uturu, Abia State (Nigeria)

    1996-04-29

    Zinc sulphide (ZnS) thin films were successfully deposited on glass substrates under varying deposition conditions using the electroless or solution growth technique. The film properties investigated include their transmittance/reflectance/absorbance spectra, bandgap, optical constants, and thicknesses. Films grown under certain parametric conditions were found to exhibit high transmittance (64-98%), low absorbance, and low reflectance in the ultraviolet (uv)/visible/near infrared (nir) regions up to 1.00 {mu}m. Those obtained under other conditions exhibited high transmittance (78-98%) and low absorbance (0.01-0.1) in the uv/visible regions but low transmittance (30-37) and high absorbance (0.56) in the nir region. These characteristics revealed their suitability for various solar device applications. Bandgap range E{sub g}=3.7-3.8 eV and thickness range t=0.07 - 0.73 {mu}m were obtained.

  17. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    Directory of Open Access Journals (Sweden)

    Michael J. Brett

    2012-08-01

    Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

  18. Structural, Optical, and Morphological Properties of the Cadmium Oxide Thin Film Taif S. Almaadhede

    Directory of Open Access Journals (Sweden)

    Taif S. Almaadhede

    2018-04-01

    Full Text Available Cadmium oxide nanoparticles CdO NPS has been prepared by laser ablation in ethanol at 600 pulses and 600 mJ as laser energy. The structural, optical, and morphological properties of the cadmium oxide CdO thin film deposited on a glass substrate have been studied. X-ray diffrac-tometer (XRD 6000, Shimadzu, X-ray, diffractometer with Cukα radiation at a wavelength of ( = 0.154056 nm was utilized to investigate the structural properties of CdO NPs. The optical absorption of colloidal CdO NPs was measured using a spectrophotometer (Cary, 100 cans plus, UV-Vis-NIR, Split Beam Optics, Dual detectors in the range of (200–900 nm. The morpholo-gy of the CdO NPs was investigated by using AFM (AA 3000 Scanning Probe Microscope. The thickness of the films was measured using ellipsometer (Angstrom sun Technologies Ins.

  19. MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

    Science.gov (United States)

    Ben-Yaacov, Tammy

    In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

  20. Systematic study of influence of growth parameters on island morphology during molecular beam epitaxy growth: A Monte Carlo study

    International Nuclear Information System (INIS)

    Shankar Prasad Shrestha; Park, C.-Y.

    2006-05-01

    We have made a systematic study of influence of diffusion flux ratio (D/F), diffusional anisotropy (DA) and sticking anisotropy (SA) on island morphology to show the influence of each growth parameter on island morphology in presence of the other growth parameters. Our results show that the influence of D/F ratio and DA on island morphology depends on the sticking anisotropy of the adatoms. At the intermediate anisotropic case, increase in D/F ratio results in transition of the island morphology from 1d nature to 2 d nature. In anisotropic diffusion case, D/F ratio can change the growth direction of the island morphology. We also find that only sticking anisotropy is not sufficient to produce elongated islands, low D/F ratio is also essential. (author)

  1. EFFECT OF SODIUM DODECYLBENZENESULFONIC ACID (SDBS ON THE GROWTH RATE AND MORPHOLOGY OF BORAX CRYSTAL

    Directory of Open Access Journals (Sweden)

    Suharso Suharso

    2010-06-01

    Full Text Available An investigation of the effect of sodium dodecylbenzenesulfonic acid (SDBS on both growth rate and morphology of borax crystal has been carried out.  This experiment was carried out at temperature of 25 °C and relative supersaturation of 0.21 and 0.74 under in situ cell optical microscopy method.  The result shows that SDBS inhibits the growth rate and changes the morphology of borax crystal.   Keywords: Borax; growth rate; crystallization, SDBS

  2. Composition, XRD and morphology study of laser prepared LiNbO.sub.3./sub. films

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Havránek, Vladimír; Remsa, Jan; Kocourek, Tomáš; Vincze, A.; Bruncko, J.; Studnička, Václav; Rubešová, K.

    2013-01-01

    Roč. 110, č. 4 (2013), s. 883-888 ISSN 0947-8396 R&D Projects: GA ČR(CZ) GAP106/10/1477; GA MŠk(CZ) MEB0810156 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : LiNbO 3 * thin films * PLD * composition * morphology Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.694, year: 2013

  3. Morphology control in thin films of PS:PLA homopolymer blends by dip-coating deposition

    Energy Technology Data Exchange (ETDEWEB)

    Vital, Alexane [Interfaces, Confinement, Matériaux et Nanostructures (ICMN), CNRS-Université d’Orléans, UMR 7374, 1B Rue de la Férollerie, C.S. 40059, 45071 Orléans Cedex 2 (France); Groupe de recherches sur l’énergétique des milieux ionisés (GREMI), CNRS-Université d’Orléans, UMR 7344, 14 rue d' Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France); Vayer, Marylène [Interfaces, Confinement, Matériaux et Nanostructures (ICMN), CNRS-Université d’Orléans, UMR 7374, 1B Rue de la Férollerie, C.S. 40059, 45071 Orléans Cedex 2 (France); Tillocher, Thomas; Dussart, Rémi [Groupe de recherches sur l’énergétique des milieux ionisés (GREMI), CNRS-Université d’Orléans, UMR 7344, 14 rue d' Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France); Boufnichel, Mohamed [STMicroelectronics, 16, rue Pierre et Marie Curie, B.P. 7155, 37071 Tours Cedex 2 (France); and others

    2017-01-30

    Highlights: • A process to control the morphology of polymer blends thin film is described. • It is based on the use of dip-coating at various withdrawal speeds. • The process is examined within the capillary and the draining regimes. • The final dried morphology is controlled by the regime of deposition. • This study is of high interest for the preparation of advanced functional surfaces. - Abstract: In this work, smooth polymer films of PS, PLA and their blends, with thicknesses ranging from 20 nm up to 400 nm and very few defects on the surface were obtained by dip-coating. In contrast to the process of spin-coating which is conventionally used to prepare thin films of polymer blends, we showed that depending on the deposition parameters (withdrawal speed and geometry of the reservoir), various morphologies such as layered films and laterally phase-separated domains could be formed for a given blend/solvent pair, offering much more opportunities compared to the spin-coating process. This diversity of morphologies was explained by considering the superposition of different phenomena such as phase separation process, dewetting and vitrification in which parameters such as the drying time, the compatibility of the polymer/solvent pairs and the affinity of the polymer towards the interfaces were suspected to play a significant role. For that purpose, the process of dip-coating was examined within the capillary and the draining regimes (for low and high withdrawal speed respectively) in order to get a full description of the thickness variation and evaporation rate as a function of the deposition parameters.

  4. Morphology, structure and optical properties of sol-gel ITO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stoica, T.F.; Teodorescu, V.S.; Blanchin, M.G.; Stoica, T.A.; Gartner, M.; Losurdo, M.; Zaharescu, M

    2003-08-15

    The alkoxidic route and the spinning deposition were used to prepare monolayer sol-gel indium tin oxide (ITO) films. The morphology and crystalline structure were investigated by cross-section transmission electron microscopy (XTEM) and atomic force microscopy (AFM). The ITO sol-gel mono-layer contains three regions of different porosities. The basic crystalline structure is that of the In{sub 2}O{sub 3} lattice. The optical properties have been studied by optical transmission and spectroscopic ellipsometry.

  5. Ion energy/momentum effects during ion assisted growth of niobium nitride films

    Science.gov (United States)

    Klingenberg, Melissa L.

    The research described herein was performed to better understand and discern ion energy vs. ion momentum effects during ion beam assisted (IBAD) film growth and their effects on residual stress, crystalline structure, morphology, and composition, which influence film tribological properties. NbxN y was chosen for this research because it is a refractory material that can possess a large number of crystalline structures, and it has been found to have good tribological properties. To separate the effects of momentum transfer per arriving atom (p/a), which considers bombarding species mass, energy, and ion-to-atom transport ratio, from those of energy deposition per arriving atom (E/a), a mass independent parameter, different inert ion beams (krypton, argon, and neon) were used to create a matrix of coatings formed using similar energy deposition, but different momentum transfer and vice versa. Deposition was conducted in a research-scale IBAD system using electron beam evaporation, a radio frequency ion source, and a neutral nitrogen gas backfill. Films were characterized using x-ray diffraction, atomic force microscopy, Rutherford backscattering spectrometry, and residual stress analysis. Direct and quantifiable effects of bombardment were observed; however, energy deposition and momentum transfer effects could not be completely separated, confirming that thin film processes are complex. Complexities arose from ion-specific interactions (ion size, recoil energy, per cent reflected neutrals, Penning ionization, etc.) and chemistry effects that are not considered by the simple models. Overall, it can be stated that bombardment promoted nitride formation, nanocrystallinity, and compressive stress formation; influenced morphology (which influenced post-deposition oxygen uptake) and stress evolution; increased lattice parameter; modified crystalline phase and texture; and led to inert gas incorporation. High stress levels correlated strongly with material disorder and

  6. Improvement of Flame-made ZnO Nanoparticulate Thick Film Morphology for Ethanol Sensing

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-05-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particles properties were analyzed by XRD, BET. The ZnO particle size and morphology was observed by SEM and HR-TEM revealing spheroidal, hexagonal, and rod-like morphologies. The crystallite sizes of ZnO spheroidal and hexagonal particles ranged from 10-20 nm. ZnO nanorods were ranged from 10-20 nm in width and 20-50 nm in length. Sensing films were produced by mixing the nanoparticles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder. The paste was doctor-bladed onto Al2O3 substrates interdigitated with Au electrodes. The morphology of the sensing films was analyzed by optical microscopy and SEM analysis. Cracking of the sensing films during annealing process was improved by varying the heating conditions. The gas sensing of ethanol (25-250 ppm was studied at 400 °C in dry air containing SiC as the fluidized particles. The oxidation of ethanol on the surface of the semiconductor was confirmed by mass spectroscopy (MS. The effect of micro-cracks was quantitatively accounted for as a provider of extra exposed edges. The sensitivity decreased notably with increasing crack of sensing films. It can be observed that crack widths were reduced with decreasing heating rates. Crack-free of thick (5 μm ZnO films evidently showed higher sensor signal and faster response times (within seconds than cracked sensor. The sensor signal increased and the response time decreased with increasing ethanol concentration.

  7. Influence of Philosamia ricini silk fibroin components on morphology, secondary structure and thermal properties of chitosan biopolymer film.

    Science.gov (United States)

    Prasong, S; Nuanchai, K; Wilaiwan, S

    2009-09-15

    This study aimed to prepare Eri (Philosamia ricini) Silk Fibroin (SF)/chitosan (CS) blend films by a solvent evaporation method and to compare the blend films with both native SF and CS films. Influence of SF ratios on the morphology, secondary structure and thermal decomposition of the CS blend films were investigated. The native SF and CS films were uniform and homogeneous without phase separation. For the blend films, the uniform can be found less than 60% of SF composition. All of SF/CS blend films showed both SF and CS characteristics. FT-IR results showed that the blend films composed of both random coil and beta-sheet with predominant of beta-sheet form. Interaction of intermolecular between SF and CS have occurred which were measured by thermogravimetric thermograms. Increasing of SF contents was leading to the increase of beta-sheet structures which were enhanced the thermal stability of the CS blend films.

  8. Role of Annealing Temperature on Morphology of Alumina Thin Film Prepared by Wet-Chemical Method

    Directory of Open Access Journals (Sweden)

    Manju Pandey

    2015-03-01

    Full Text Available In this paper, we reported the compositional, morphological and structural properties of the alumina(Al2O3 thin films prepared by sol-gel technique and annealed between 800 0C to 1200 0C for 1-hour in an air atmosphere. The deposited films were polycrystalline in nature. Thin films were found uniform and adherent to the alumina substrate. Effect of annealing temperature on structural parameters such as pore size and surface area were calculated. The result indicates that pore size and surface area was decreased by increasing annealing temperature. The material characterization was done by field emission scanning electron microscope (SEM, atomic force microscopy (AFM and Brunaur, Emmet and Teller (BET.

  9. Post Deposition Annealing Effects on Optical, Electrical and Morphological Studies of ZnTTBPc Thin Films

    Directory of Open Access Journals (Sweden)

    B. R. Rejitha

    2012-01-01

    Full Text Available Phthalocyanines (Pcs act as efficient absorbants of photons in the visible region, specifically between 600 and 700 nm. It will produce an excited triplet state. In this paper we report the annealing effects of optical, electrical and surface morphological properties of thermal evaporated Zinc-tetra-tert-butyl-29H, 31H phthalocyanine (ZnTTBPc thin films. The optical transmittance measurements were done in the visible region (400-800 nm and, films were found to be absorbing in nature. From spectral data the absorption coefficient α, dielectric constant ε and the extinction coefficient k were evaluated and, results discussed. Also the optical band gap of the material was estimated. The activation energies were measured. Scanning electron microscopic studies was carried out to determine surface uniformity of films.

  10. Effect of varying temperature on growth, morphology and soluble ...

    African Journals Online (AJOL)

    STORAGESEVER

    2008-05-16

    May 16, 2008 ... High temperature severely affects cell morphology (cell size, cell types, formation of filaments/minicells ... media (Anagnostopolous and Spizezen, 1961) were used. .... inactivation of fts Z (filamentous temperature sensitive).

  11. Growth, characterization, and device development in monocrystalline diamond films

    Science.gov (United States)

    Davis, Robert F.

    1991-12-01

    The nucleation of diamond grains on an unscratched silicon wafer is enhanced by four order of magnitude relative to scratched substrates by using negative bias enhanced microwave plasma CVD in a 2 percent methane/hydrogen plasma for an initial period. In vacuo surface analysis has revealed that the actual nucleation occurs on the amorphous C coating present on the thin SiC layer which forms as the product of the initial reaction with the Si surface. It is believed that the C forms critical clusters which are favorable for diamond nucleation. Similar enhancement was observed together with the occurrence of textured diamond films in the use of bias pretreatment of cubic Beta SiC substrates. Approximately 50 percent of the initial diamond nuclei were aligned with the SiC substrate. In contrast, the use of the biasing pretreatment for one hour on polycrystalline substrates resulted in only about 7 percent coverage with diamond particles. Numerous techniques have been used to analyze the nucleation and growth phenomena, especially micro Raman and scanning tunneling microscopy. The latter technique has shown that the morphology of doped and undoped diamond nuclei are similar, as well as the fact that significant concentrations of vacancy related defects are present. In device related-studies, UV-photoemission studies have shown that TiC occurs at the Ti-diamond (100) interface after a 400 C anneal. The Schottky barrier height from this metal on p-type diamond was determined to be 1.0 eV. Indications of negative electron affinity (NEA) was observed and attributed to emission of electrons that are quasi-thermalized to the bottom of the conduction band. A disordered surface removes the NEA. The microwave performance of p-type (beta-doped) diamond MESFET's at 10 GHz has been further investigated. Elevated temperatures may be necessary to obtain sufficient free charge densities in the conducting channel but this will result in degraded device performance. Each of these

  12. A liquid-like model for the morphology evolution of ion bombarded thin films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto, L., E-mail: luca.repetto@unige.it [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Lo Savio, R. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Angeli, E.; Valbusa, U. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2015-07-01

    Thin solid films exposed to ion irradiation exhibit a peculiar evolution that can differ substantially from what is observed for bulk samples. The phenomenology of the patterns that self-organize on the substrate is very rich, with morphologies that display several degrees of order upon the modification of initial film characteristics and irradiation parameters. This richness paves the way for the fabrication of novel functional surfaces, but it is also an indication of the complexity of the underlying driving mechanisms. A remarkable simplification for the comprehension of these phenomena can come from the noteworthy similarity of the obtained patterns with those showing up when liquids dewet from their substrates. Here, we analyze the possibility to apply a liquid-like model to explain the morphology evolution of ion bombarded thin films for the whole phenomenology showing up in experiments. In establishing this connection between liquids and ion bombarded thin films, we propose to use also for liquids the insight gained for our system with recent experiments that stress the importance of the substrate topography for the selection of the dewetting mechanism. If confirmed, this result would lead to a reconsideration of the importance of capillary waves in spinodal dewetting, and will help to understand the low reproducibility of the related experimental results.

  13. Solution Coating of Pharmaceutical Nanothin Films and Multilayer Nanocomposites with Controlled Morphology and Polymorphism.

    Science.gov (United States)

    Horstman, Elizabeth M; Kafle, Prapti; Zhang, Fengjiao; Zhang, Yifu; Kenis, Paul J A; Diao, Ying

    2018-03-28

    Nanosizing is rapidly emerging as an alternative approach to enhance solubility and thus the bioavailability of poorly aqueous soluble active pharmaceutical ingredients (APIs). Although numerous techniques have been developed to perform nanosizing of API crystals, precise control and modulation of their size in an energy and material efficient manner remains challenging. In this study, we present meniscus-guided solution coating as a new technique to produce pharmaceutical thin films of nanoscale thickness with controlled morphology. We demonstrate control of aspirin film thickness over more than 2 orders of magnitude, from 30 nm to 1.5 μm. By varying simple process parameters such as the coating speed and the solution concentration, the aspirin film morphology can also be modulated by accessing different coating regimes, namely the evaporation regime and the Landau-Levich regime. Using ellipticine-a poorly water-soluble anticancer drug-as another model compound, we discovered a new polymorph kinetically trapped during solution coating. Furthermore, the polymorphic outcome can be controlled by varying coating conditions. We further performed layer-by-layer coating of multilayer nanocomposites, with alternating thin films of ellipticine and a biocompatible polymer, which demonstrate the potential of additive manufacturing of multidrug-personalized dosage forms using this approach.

  14. Morphological, structural and optical properties of ZnO thin films deposited by dip coating method

    Energy Technology Data Exchange (ETDEWEB)

    Marouf, Sara; Beniaiche, Abdelkrim; Guessas, Hocine, E-mail: aziziamor@yahoo.fr [Laboratoire des Systemes Photoniques et Optiques Non Lineaires, Institut d' Optique et Mecanique de Precision, Universite Ferhat Abbas-Setif 1, Setif (Algeria); Azizi, Amor [Laboratoire de Chimie, Ingenierie Moleculaire et Nanostructures, Universite Ferhat Abbas-Setif 1, Setif (Algeria)

    2017-01-15

    Zinc oxide (ZnO) thin films were deposited on glass substrate by dip coating technique. The effects of sol aging time on the deposition of ZnO films was studied by using the field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and optical transmission techniques. The morphology of the films strongly depends on preparation route and deposition technique. It is noteworthy that films deposited from the freshly prepared solution feature indistinct characteristics; had relatively poor crystalline quality and low optical transmittance in the visible region. The increase in sol aging time resulted in a gradual improvement in crystallinity (in terms of peak sharpness and peak intensity) of the hexagonal phase for all diffraction peaks. Effect of sol aging on optical transparency is quite obvious through increased transmission with prolonged sol aging time. Interestingly, 72-168 h sol aging time was found to be optimal to achieve smooth surface morphology, good crystallinity and high optical transmittance which were attributed to an ideal stability of solution. These findings present a better-defined and more versatile procedure for production of clean ZnO sols of readily adjustable nanocrystalline size. (author)

  15. Ascorbic Acid and BSA Protein in Solution and Films: Interaction and Surface Morphological Structure

    Directory of Open Access Journals (Sweden)

    Rafael R. G. Maciel

    2013-01-01

    Full Text Available This paper reports on the study of the interactions between ascorbic acid (AA and bovine serum albumin (BSA in aqueous solution as well as in films (BSA/AA films prepared by the layer-by-layer technique. Regarding to solution studies, a hyperchromism (in the range of ultraviolet was found as a function of AA concentration, which suggested the formation of aggregates from AA and BSA. Binding constant, , determined for aggregates from BSA and AA was found to be about 102 M−1, which indicated low affinity of AA with BSA. For the BSA/AA films, it was also noted that the AA adsorption process and surface morphological structures depended on AA concentration. By changing the contact time between the AA and BSA, a hypochromism was revealed, which was associated to decrease of accessibility of solvent to tryptophan due to formation of aggregates. Furthermore, different morphological structures of aggregates were observed, which were attributed to the diffusion-limited aggregation. Since most of studies of interactions of drugs and proteins are performed in solution, the analysis of these processes by using films can be very valuable because this kind of system is able to employ several techniques of investigation in solid state.

  16. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    Science.gov (United States)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  17. Morphological study of electrophoretically deposited TiO2 film for DSSC application

    Science.gov (United States)

    Patel, Alkesh B.; Patel, K. D.; Soni, S. S.; Sonigara, K. K.

    2018-05-01

    In the immerging field of eco-friendly and low cost photovoltaic devices, dye sensitized solar cell (DSSC) [1] has been investigated as promising alternative to the conventional silicon-based solar cells. In the DSSC device, photoanode is crucial component that take charge of holding sensitizer on it and inject the electrons from the sensitizer to current collector. Nanoporous TiO2 is the most relevant candidate for the preparation of photoanode in DSSCs. Surface properties, morphology, porosity and thickness of TiO2 film as well as preparation technique determine the performance of device. In the present work we have report the study of an effect of nanoporous anatase titanium dioxide (TiO2) film thickness on DSSC performance. Photoanode TiO2 (P25) film was deposited on conducting substrate by electrophoresis technique (EPD) and film thickness was controlled during deposition by applying different current density for a constant time interval. Thickness and surface morphology of prepared films was studied by SEM and transmittance analysis. The same set of photoanode was utilized in DSSC devices using metal free organic dye sensitizer to evaluate the photovoltaic performance. Devices were characterized through Current-Voltage (I-V) characteristic, electrochemical impedance spectroscopy (EIS) and open circuit voltage decay curves. Dependency of device performance corresponding to TiO2 film thickness is investigated through the lifetime kinetics of electron charge transfer mechanism trough impedance fitting. It is concluded that appropriate thickness along with uniformity and porosity are required to align the dye molecules to respond efficiently the incident light photons.

  18. Performances of screen-printing silver thick films: Rheology, morphology, mechanical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jung-Shiun; Liang, Jau-En; Yi, Han-Liou [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China); Chen, Shu-Hua [China Steel Corporation, Kaohsiung City 806, Taiwan, ROC (China); Hua, Chi-Chung, E-mail: chmcch@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China)

    2016-06-15

    Numerous recent applications with inorganic solar cells and energy storage electrodes make use of silver pastes through processes like screen-printing to fabricate fine conductive lines for electron conducting purpose. To date, however, there have been few studies that systematically revealed the properties of the silver paste in relation to the mechanical and electronic performances of screen-printing thick films. In this work, the rheological properties of a series of model silver pastes made of silver powders of varying size (0.9, 1.3, and 1.5 μm) and shape (irregular and spherical) were explored, and the results were systematically correlated with the morphological feature (scanning electron microscopy, SEM) and mechanical (peeling test) and electronic (transmission line method, TLM) performances of screen-printing dried or sintered thick films. We provided evidence of generally intimate correlations between the powder dispersion state in silver pastes—which is shown to be well captured by the rheological protocols employed herein—and the performances of screen-printing thick films. Overall, this study suggests the powder dispersion state and the associated phase behavior of a paste sample can significantly impact not only the morphological and electronic but also mechanical performances of screen-printing thick films, and, in future perspectives, a proper combination of silver powders of different sizes and even shapes could help reconcile quality and stability of an optimum silver paste. - Highlights: • Powder dispersion correlates well with screen-printing thick film performances. • Rheological fingerprints can be utilized to fathom the powder dispersion state. • Good polymer-powder interactions in the paste ensure good powder dispersion. • Time-dependent gel-like viscoelastic features are found with optimum silver pastes. • The size and shape of functional powder affect the dispersion and film performances.

  19. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  20. Effect of plant growth promoting rhizobacteria on root morphology of ...

    African Journals Online (AJOL)

    Jane

    2011-10-03

    Oct 3, 2011 ... Plant growth promoting rhizobacteria improve the plant growth by a variety of ways like ... preparing textile dye in the Far East, Central and. Northern Asia and ... The experiment was carried out in complete randomized design.

  1. Influence of stress on morphology and magnetism of heteroepitaxial thin films

    International Nuclear Information System (INIS)

    Wedler, G.

    2001-01-01

    In this thesis the method of the bending-beam technique and the scanning tunnel microscopy was used in order to study the influence of mechanical stresses on growth and magnetoelastic coupling of selected epitaxial thin-layer systems. The Si x Ge 1-x alloy films deposited at 900 K on Si(001) substrates with Si concentrations 20% a change of the stress-behaviour is observed, which lets conclude to pure 3D island growth without wetting layer. Scanning-tunnel-microscopy studies show already at intermediate film thicknesses of 1 nm regular islands with a narrow size distribution. For the explanation of this surprising change of the growth modus the influence of kinetic parameters is discussed. Furthermore for the first time stress measurements of Fe/ GaAs(001) are presented. The behaviour of the film stress at 450 K hints to a few nm thick interdiffusion layer between film and substrate. This interdiffusion is at 300 K only by about 30% reduced and cannot by this be neglected anywhere. By means of on different substrates [Mg(001), lowly stressed Cr(001) buffer layer, GaAs(001)] growed Fe films for the first time a detailed picture of the stress dependence of the magnetoelastic coupling constants B 1 and B 2 of Fe in the layer-density range of 2-100 mm is presented. While the coupling constants of stress-free Fe(001) films exhibit volume behaviour, distinct deviations occur already at small stresses of about 0.1 GPa; at some GPa even the sign changes. The value of B 2 decreases linearly with the film stress up to 6 GPa, in B 1 after an initially linear slope above 2-3 GPa a saturation occurs. Magnetization and magnetic anisotropy however behave in whole studied layer-density range as in the volume

  2. Grain Growth in Nanocrystalline Mg-Al Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kruska, Karen; Rohatgi, Aashish; Vemuri, Venkata Rama Ses; Kovarik, Libor; Moser, Trevor H.; Evans, James E.; Browning, Nigel D.

    2017-10-05

    An improved understanding of grain growth kinetics in nanocrystalline materials, and in metals and alloys in general, is of continuing interest to the scientific community. In this study, Mg - Al thin films containing ~10 wt.% Al and with 14.5 nm average grain size were produced by magnetron-sputtering and subjected to heat-treatments. The grain growth evolution in the early stages of heat treatment at 423 K (150 °C), 473 K (200 °C) and 573K (300 °C) was observed with transmission electron microscopy and analyzed based upon the classical equation developed by Burke and Turnbull. The grain growth exponent was found to be 7±2 and the activation energy for grain growth was 31.1±13.4 kJ/mol, the latter being significantly lower than in bulk Mg-Al alloys. The observed grain growth kinetics are explained by the Al supersaturation in the matrix and the pinning effects of the rapidly forming beta precipitates and possibly shallow grain boundary grooves. The low activation energy is attributed to the rapid surface diffusion which is dominant in thin film systems.

  3. Diketopyrrolopyrrole-based polymer:fullerene nanoparticle films with thermally stable morphology for organic photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Holmes, Natalie P. [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics; Vaughan, Ben [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics; CSIRO Energy Technology, Newcastle (Australia); Williams, Evan L. [Inst. of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), Singapore (Singapore); Kroon, Renee [Univ. of South Australia, Mawson Lakes Campus, SA (Australia). Ian Wark Research Inst.; Chalmers Univ. of Technology, Goteborg (Sweden). Dept. of Chemical and Biological Engineering/Polymer Technology; Anderrson, Mats R. [Univ. of South Australia, Mawson Lakes Campus, SA (Australia). Ian Wark Research Inst.; Chalmers Univ. of Technology, Goteborg (Sweden). Dept. of Chemical and Biological Engineering/Polymer Technology; Kilcoyne, A. L. David [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Sonar, Prashant [Inst. of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), Singapore (Singapore); Queensland Univ. of Technology (QUT), Brisbane (Australia). School of Chemistry, Physics and Mechanical Engineering; Zhou, Xiaojing [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics; Dastoor, Paul C. [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics; Belcher, Warwick J. [Univ. of Newcastle, Callaghan NSW (Australia). Centre for Organic Electronics

    2017-02-02

    Polymer:fullerene nanoparticles (NPs) offer two key advantages over bulk heterojunction (BHJ) films for organic photovoltaics (OPVs), water-processability and potentially superior morphological control. Once an optimal active layer morphology is reached, maintaining this morphology at OPV operating temperatures is key to the lifetime of a device. Here in this paper we study the morphology of the PDPP-TNT (poly{3,6-dithiophene-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-naphthalene}):PC71BM ([6,6]-phenyl C71 butyric acid methyl ester) NP system and then compare the thermal stability of NP and BHJ films to the common poly(3-hexylthiophene) (P3HT): phenyl C61 butyric acid methyl ester (PC61BM) system. We find that material Tg plays a key role in the superior thermal stability of the PDPP-TNT:PC71BM system; whereas for the P3HT:PC61BM system, domain structure is critical.

  4. An evaluation of chondrocyte morphology and gene expression on superhydrophilic vertically-aligned multi-walled carbon nanotube films.

    Science.gov (United States)

    Antonioli, Eliane; Lobo, Anderson O; Ferretti, Mario; Cohen, Moisés; Marciano, Fernanda R; Corat, Evaldo J; Trava-Airoldi, Vladimir J

    2013-03-01

    Cartilage serves as a low-friction and wear-resistant articulating surface in diarthrodial joints and is also important during early stages of bone remodeling. Recently, regenerative cartilage research has focused on combinations of cells paired with scaffolds. Superhydrophilic vertically aligned carbon nanotubes (VACNTs) are of particular interest in regenerative medicine. The aim of this study is to evaluate cell expansion of human articular chondrocytes on superhydrophilic VACNTs, as well as their morphology and gene expression. VACNT films were produced using a microwave plasma chamber on Ti substrates and submitted to an O2 plasma treatment to make them superhydrophilic. Human chondrocytes were cultivated on superhydrophilic VACNTs up to five days. Quantitative RT-PCR was performed to measure type I and type II Collagen, Sox9, and Aggrecan mRNA expression levels. The morphology was analyzed by scanning electron microscopy (SEM) and confocal microscopy. SEM images demonstrated that superhydrophilic VACNTs permit cell growth and adhesion of human chondrocytes. The chondrocytes had an elongated morphology with some prolongations. Chondrocytes cultivated on superhydrophilic VACNTs maintain the level expression of Aggrecan, Sox9, and Collagen II determined by qPCR. This study was the first to indicate that superhydrophilic VACNTs may be used as an efficient scaffold for cartilage or bone repair. Copyright © 2012 Elsevier B.V. All rights reserved.

  5. Experimental and simulation study of growth of TiO2 films on different substrates and its applications

    Science.gov (United States)

    Ghogare, Trupti T.; Kartha, Moses J.; Kendre, Subhash D.; Pathan, Habib M.

    2018-04-01

    Monte-Carlo Ballistic Deposition simulations have done on substrates with different initial roughness. The grown films were observed to be porous. The initial growths of the films with seed like initiations are observed for substrate with high initial roughness. In order to confirm this effect TiO2 films were deposited on different substrates using chemical bath deposition. The surface morphological and optical properties were measured using scanning electron microscopy and a UV-Vis spectrophotometer. Flower like porous structure are obtained on glass substrate and continuous porous morphology is formed on ITO substrate. The morphology of the surfaces was successfully reconstructed and the surface porosity was calculated after digitalising images and reconstructed the surfaces. The TiO2 film formed on ITO is observed to be 10% more porous than on the film formed on glass substrate. Diffusion Limited Aggregation simulations with multiple seeds confirms that the observed flower like structure formed are due to the screening effects of the diffusing ion by already deposited particles.

  6. The effect of different thickness alumina capping layers on the final morphology of dewet thin Ni films

    Science.gov (United States)

    White, Benjamin C.; Behbahanian, Amir; Stoker, T. McKay; Fowlkes, Jason D.; Hartnett, Chris; Rack, Phillip D.; Roberts, Nicholas A.

    2018-03-01

    Nanoparticles on a substrate have numerous applications in nanotechnology, from enhancements to solar cell efficiency to improvements in carbon nanotube growth. Producing nanoparticles in a cost effective fashion with control over size and spacing is desired, but difficult to do. This work presents a scalable method for altering the radius and pitch distributions of nickel nanoparticles. The introduction of alumina capping layers to thin nickel films during a pulsed laser-induced dewetting process has yielded reductions in the mean and standard deviation of radii and pitch for dewet nanoparticles with no noticeable difference in final morphology with increased capping layer thickness. The differences in carbon nanotube mats grown, on the uncapped sample and one of the capped samples, is also presented here, with a more dense mat being present for the capped case.

  7. Influence of Heat Treatment on the Morphologies of Copper Nanoparticles Based Films by a Spin Coating Method

    Directory of Open Access Journals (Sweden)

    Wei Liu

    2017-01-01

    Full Text Available We have investigated the influence of heat treatment on the morphologies of copper nanoparticles based films on glass slides by a spin coating method. The experiments show that heat treatment can modify the sizes and morphologies of copper nanoparticles based films on glass slides. We suggest that through changing the parameters of heat treatment process may be helpful to vary the scattering and absorbing intensity of copper nanoparticles when used in energy harvesting/conversion and optical devices.

  8. Influence of growth temperature on morphological, structural and ...

    Indian Academy of Sciences (India)

    Zinc oxide (ZnO) nanostructures were grown as thin films on the p-silicon (100) wafer and also in the form of powder inside the boat by heating (550–950 °C) zinc powder in the presence of oxygen without any catalyst or additives, using the thermal evaporation method. The field-emission scanning electron microscopy ...

  9. Morphological, elemental, and optical characterization of plasma polymerized n-butyl methacrylate thin films

    Science.gov (United States)

    Nasrin, Rahima; Hossain, Khandker S.; Bhuiyan, A. H.

    2018-05-01

    Plasma polymerized n-butyl methacrylate (PPnBMA) thin films of varying thicknesses were prepared at room temperature by AC plasma polymerization system using a capacitively coupled parallel plate reactor. Field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), energy-dispersive X-ray (EDX) analysis, and ultraviolet-visible (UV-Vis) spectroscopic investigation have been performed to study the morphological, elemental, and optical properties of the PPnBMA thin films, respectively. The flat and defect-free nature of thin films were confirmed by FESEM and AFM images. With declining plasma power, average roughness and root mean square roughness increase. Allowed direct transition ( E gd) and indirect transition ( E gi) energy gaps were found to be 3.64-3.80 and 3.38-3.45 eV, respectively, for PPnBMA thin films of different thicknesses. Values of E gd as well as E gi increase with the increase of thickness. The extinction coefficient, Urbach energy, and steepness parameter were also determined for these thin films.

  10. Morphological, structural and optical properties of MEH-PPV: PC70BM nanocomposite film

    Science.gov (United States)

    Mhamdi, Asya; Sweii, Fatma ben Slama; Saidi, Hamza; Saidi, Faouzi; Bouazizi, Abdelaziz

    2018-05-01

    In this report, the influence of annealing temperature and spin coating speed on the structural and morphological properties of a blend of poly (2-methoxy-5-(2-ethyl-oxy)-p-phenylene-vinylene) (MEH-PPV) and [6-6]-phenyl-C71-butyric acid methyl ester (PC70BM) layer has been investigated. The photoactive layer (MEH-PPV: PC70BM) was deposited on ZnO film deposited on top of indium tin oxide (ITO) substrate by spin-coating. The effect of spin coating speed via atomic force microscope (AFM) leads to conclude that high speed is favorable for a good homogeneity of the film surface and good aggregates dispersion. The optimized structure was studied by varying the annealing temperatures using X-ray diffraction (XRD). The XRD analysis indicates that annealing treatment promoted the ordered aggregation and crystallization of MEH-PPV: PC70BM films. Indeed, the blend ratio effect on the optical properties of MEH-PPV: PC70BM thin film was investigated. While, the effect of incorporation of PC70BM on the optical properties was studied using UV-Vis and photoluminescence (PL) measurement. We conclude that MEH-PPV: PC70BM (1:3) film leads to high charge transfer rate.

  11. Ultra-high wear resistance of ultra-nanocrystalline diamond film: Correlation with microstructure and morphology

    Science.gov (United States)

    Rani, R.; Kumar, N.; Lin, I.-Nan

    2016-05-01

    Nanostructured diamond films are having numerous unique properties including superior tribological behavior which is promising for enhancing energy efficiency and life time of the sliding devices. High wear resistance is the principal criterion for the smooth functioning of any sliding device. Such properties are achievable by tailoring the grain size and grain boundary volume fraction in nanodiamond film. Ultra-nanocrystalline diamond (UNCD) film was attainable using optimized gas plasma condition in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. Crystalline phase of ultra-nanodiamond grains with matrix phase of amorphous carbon and short range ordered graphite are encapsulated in nanowire shaped morphology. Film showed ultra-high wear resistance and frictional stability in micro-tribological contact conditions. The negligible wear of film at the beginning of the tribological contact was later transformed into the wearless regime for prolonged sliding cycles. Both surface roughness and high contact stress were the main reasons of wear at the beginning of sliding cycles. However, the interface gets smoothened due to continuous sliding, finally leaded to the wearless regime.

  12. Nanoscale size effects on the mechanical properties of platinum thin films and cross-sectional grain morphology

    KAUST Repository

    Abbas, K

    2015-12-10

    © 2016 IOP Publishing Ltd. The mechanical behavior of polycrystalline Pt thin films is reported for thicknesses of 75 nm, 100 nm, 250 nm, and 400 nm. These thicknesses correspond to transitions between nanocrystalline grain morphology types as found in TEM studies. Thinner samples display a brittle behavior, but as thickness increases the grain morphology evolves, leading to a ductile behavior. During evolution of the morphology, dramatic differences in elastic moduli (105-160 GPa) and strengths (560-1700 MPa) are recorded and explained by the variable morphology. This work suggests that in addition to the in-plane grain size of thin films, the transitions in cross-sectional morphologies of the Pt films significantly affect their mechanical behavior.

  13. Influence of S/Mn molar ratio on the morphology and optical property of γ-MnS thin films prepared by microwave hydrothermal

    International Nuclear Information System (INIS)

    Yu, Xin; Li-yun, Cao; Jian-feng, Huang; Jia, Liu; Jie, Fei; Chun-yan, Yao

    2013-01-01

    Highlights: ► The influence of the precursor solution molar ratio of S/Mn. ► The degree of orientation of the γ-MnS film decrease slightly with increasing the S/Mn from 2.0 to 4.0. ► Film quality is strongly affected by the initial nucleation. ► The absorption edge obviously shifts to a higher wavelength with the increase of the S/Mn molar ratio from 2.0 to 4.0. - Abstract: Well crystallized γ-MnS thin films were successfully synthesized at low temperature and short processing time via a novel microwave hydrothermal (M-H) process without any complexing agent by using manganese chloride and thioacetamide as source materials. The influence of different S/Mn molar ratio in the precursor solution on the phase compositions, morphologies and optical properties of the as-deposited films was investigated. The as-deposited γ-MnS thin films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and ultraviolet–visible (UV–vis). Results show that the wurtzite phase γ-MnS thin films with good crystallization can be achieved when S/Mn molar ratio is controlled at 2.0–4.0. The deposited γ-MnS thin films exhibit (1 0 0) orientation growth with the thickness of 300–500 nm. With the increase of S/Mn molar ratio from 2.0 to 4.0, the orientation growth is weakened while the dense and uniform of the as-deposited γ-MnS thin films are obviously improved and the corresponding band gap of the thin films increase from 3.88 to 3.97 eV.

  14. Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2014-07-01

    The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

  15. DNA polymeric films as a support for cell growth as a new material for regenerative medicine: Compatibility and applicability.

    Science.gov (United States)

    Jayme, Cristiano Ceron; de Paula, Leonardo Barcelos; Rezende, Nayara; Calori, Italo Rodrigo; Franchi, Leonardo Pereira; Tedesco, Antonio Claudio

    2017-11-15

    DNA polymeric films (DNA-PFs) are a promising drug delivery system (DDS) in modern medicine. In this study, we evaluated the growth behavior of oral squamous cell carcinoma (OSCC) cells on DNA-PFs. The morphological, biochemical, and cytometric features of OSCC cell adhesion on DNA-PFs were also assessed. An initial, temporary alteration in cell morphology was observed at early time points owing to the inhibition of cell attachment to the film, which then returned to a normal morphological state at later time points. MTT and resazurin assays showed a moderate reduction in cell viability related to increased DNA concentration in the DNA-PFs. Flow cytometry studies showed low cytotoxicity of DNA-PFs, with cell viabilities higher than 90% in all the DNA-PFs tested. Flow cytometric cell cycle analysis also showed average cell cycle phase distributions at later time points, indicating that OSCC cell growth is maintained in the presence of DNA-PFs. These results show high biocompatibility of DNA-PFs and suggest their use in designing "dressing material," where the DNA film acts as a support for cell growth, or with incorporation of active or photoactive compounds, which can induce tissue regeneration and are useful to treat many diseases, especially oral cancer. Copyright © 2017 Elsevier Inc. All rights reserved.

  16. Development of pore interconnectivity/morphology in porous silica films investigated by cyclic voltammetry and slow positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Tang, Xiuqin; Xiong, Bangyun; Li, Qichao; Mao, Wenfeng; Xiao, Wei; Fang, Pengfei; He, Chunqing

    2015-01-01

    Highlights: •Porous silica films were studied by cyclic voltammetry and positron annihilation. •Highly interconnected pores were formed in the film fabricated with more CTAB. •Aligned nanochannels were observed in the porous flim prepared with 25 wt.% CTAB. •I − and Ps diffusion in the films was governed by pore interconnectivity/morphology. •Cyclic voltammetry is feasible to explore pore interconnectivity/morphology. -- Abstract: Cyclic voltammetry and positronium (Ps) 3γ-annihilation spectroscopy were applied to investigate pore interconnectivity/morphology of porous silica films fabricated with various loading of cetyltrimethyl ammonium bromide (CTAB). With increasing the ratio of CTAB up to 15 wt.%, the total charge Q, resulted from I − diffusion across the silica films, increased remarkably, indicative of formation of highly interconnected pores in the films prepared with more porogen. However, it decreased dramatically with further loading CTAB of 25 wt.%. Interestingly, 3γ-annihilation fraction I 3γ due to a triplet-state Ps (ortho-positronium, o-Ps) emission from the silica films showed a similar behavior as a function of CTAB loading. The abnormal decrement in Q and I 3γ in the film fabricated with 25 wt.% CTAB was well explained by formation of long nanochannels aligning parallel to the film surface. The results indicated that the total charge Q and Ps 3γ-annihilation fraction were closely associated with I − and Ps diffusion governed by the pore interconnectivity/morphology of the silica films, which made cyclic voltammetry possible to be a feasible tool to characterize pore interconnectivity/morphology of porous thin films

  17. Development of Dye-Sensitized Solar Cells with Sputtered N-Doped TiO2 Thin Films: From Modeling the Growth Mechanism of the Films to Fabrication of the Solar Cells

    OpenAIRE

    Duarte, D. A.; Massi, M.; da Silva Sobrinho, A. S.

    2014-01-01

    In this paper, nitrogen-doped TiO2 thin films were deposited by DC reactive sputtering at different doping levels for the development of dye-sensitized solar cells. The mechanism of film growth during the sputtering process and the effect of the nitrogen doping on the structural, optical, morphological, chemical, and electronic properties of the TiO2 were investigated by numerical modeling and experimental methods. The influence of the nitrogen doping on the working principle of the prototype...

  18. Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

    KAUST Repository

    García-Cerda, L. A.

    2010-03-01

    In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.

  19. Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K., E-mail: sanjeevlrs732000@yahoo.co.in [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Inamdar, A.I.; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100 715 (Korea, Republic of); Kim, B.G. [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India)

    2011-02-03

    Research highlights: > Nano-crystalline zinc oxide thin films were electrosynthesized from an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution onto FTO coated conducting glass substrates using two different electrochemical routes, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) or SDS (sodium dodecyl sulfate). > The reproducibility of the catalytic activity of the SDS and PVA surfactants in the modification of the morphologies was observed. > Vertically aligned nest-like and compact structures were observed from the SDS and PVA mediated films, respectively, while the grain size in the ZnO thin films without an organic surfactant was observed to be {approx}150 nm. > The dye sensitized ZnO electrodes displayed excellent properties in the conversion process from light to electricity. The efficiencies of the surfactant mediated nanocrystalline ZnO thin films, viz. ZnO:SDS and ZnO:PVA, sensitized with ruthenium-II (N3) dye were observed to be 0.49% and 0.27%, respectively. - Abstract: Nano-crystalline zinc oxide thin films were electrosynthesized with an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution on to FTO coated glass substrates. Two different electrochemical baths were used, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) and SDS (sodium dodecyl sulfate). The organic surfactants played an important role in modifying the surface morphology, which influenced the size of the crystallites and dye-sensitized solar cell (DSSC) properties. The vertically aligned thin and compact hexagonal crystallites were observed with SDS mediated films, while the grain size in the films without an organic surfactant was observed to be {approx}150 nm. The conversion efficiencies of the ZnO:SDS:Dye and ZnO:PVA:Dye thin films were observed to be 0.49% and 0.27%, respectively.

  20. Effects of local film properties on the nucleation and growth of tin whiskers and hillocks

    Science.gov (United States)

    Sarobol, Pylin

    Whiskers and hillocks grow spontaneously on Pb-free Sn electrodeposited films as a response to thin film stresses. Stress relaxation occurs by atom deposition to specific grain boundaries in the plane of the film, with hillocks being formed when grain boundary migration accompanies growth out of the plane of the film. The implication for whisker formation in electronics is serious: whiskers can grow to be millimeters long, sometimes causing short circuiting between adjacent components and, thereby, posing serious electrical reliability risks. In order to develop more effective whisker mitigation strategies, a predictive physics-based model has been needed. A growth model is developed, based on grain boundary faceting, localized Coble creep, as well as grain boundary sliding for whiskers, and grain boundary sliding with shear induced grain boundary migration for hillocks. In this model of whisker formation, two mechanisms are important: accretion of atoms by Coble creep on grain boundary planes normal to the growth direction inducing a grain boundary shear and grain boundary sliding in the direction of whisker growth. The model accurately captures the importance of the geometry of "surface grains"---shallow grains on film surfaces whose depths are significantly less than their in-plane grain sizes. A critical factor in the analysis is the ratio of the grain boundary sliding coefficient to the in-plane film compressive stress. If the accretion-induced shear stresses are not coupled to grain boundary motion and sliding occurs, a whisker forms. If the shear stress is coupled to grain boundary migration, a hillock forms. Based on this model, long whiskers grow from shallow surface grains with easy grain boundary sliding in the direction of growth. Other observed growth morphologies will be discussed in light of our model. Additional insights into the preferred sites for whisker and hillock growth were developed based on elastic anisotropy, local film microstructure

  1. Surface morphology of polyethylene glycol films produced by matrix-assisted pulsed laser evaporation (MAPLE): Dependence on substrate temperature

    DEFF Research Database (Denmark)

    Rodrigo, K.; Czuba, P.; Toftmann, B.

    2006-01-01

    The dependence of the surface morphology on the substrate temperature during film deposition was investigated for polyethylene glycol (PEG) films by matrix-assisted pulsed laser evaporation (MAPLE). The surface structure was studied with a combined technique of optical imaging and AFM measurements...

  2. Solution growth of Tb doped Gd_2O_3 film

    International Nuclear Information System (INIS)

    Ghosh, M.; Pitale, S.; Desai, D.G.; Patra, G.D.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Nanomaterials of Gd_2O_3 have proven applications in medical imaging and cancer therapy due to the presence of element Gd. Also Gd_2O_3 films have been grown by vapor phase method as well as self assembly in solution and studied as a high-k dielectric and efficient luminescence material. Here, we report a method to obtain Tb doped Gd_2O_3 film by solution growth method followed by suitable heat treatment. Uniform films of Tb doped Gadolinium hydroxycarbonate have been deposited on fused quartz substrates kept inside a solution containing gadolinium nitrate, terbium nitrate and Urea maintained at 90°C. Gadolinium hydroxy-carbonate films are then treated at 800°C for 2 hour to obtain Tb doped cubic Gd_2O_3 as confirmed by X-ray diffraction measurement. The photoluminescence spectra display characteristic Tb emission at 544 nm when excited at 285 nm. The lifetime of Tb emission is found to be of the order of few microseconds. (author)

  3. Formation of resonant bonding during growth of ultrathin GeTe films

    NARCIS (Netherlands)

    Wang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella

    2017-01-01

    A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of

  4. Film growth kinetics and electric field patterning during electrospray deposition of block copolymer thin films

    Science.gov (United States)

    Toth, Kristof; Hu, Hanqiong; Choo, Youngwoo; Loewenberg, Michael; Osuji, Chinedum

    The delivery of sub-micron droplets of dilute polymer solutions to a heated substrate by electrospray deposition (ESD) enables precisely controlled and continuous growth of block copolymer (BCP) thin films. Here we explore patterned deposition of BCP films by spatially varying the electric field at the substrate using an underlying charged grid, as well as film growth kinetics. Numerical analysis was performed to examine pattern fidelity by considering the trajectories of charged droplets during flight through imposed periodic field variations in the vicinity of the substrate. Our work uncovered an unexpected modality for improving the resolution of the patterning process via stronger field focusing through the use of a second oppositely charged grid beneath a primary focusing array, with an increase in highly localized droplet deposition on the intersecting nodes of the grid. Substrate coverage kinetics are considered for homopolymer deposition in the context of simple kinetic models incorporating temperature and molecular weight dependence of diffusivity. By contrast, film coverage kinetics for block copolymer depositions are additionally convoluted with preferential wetting and thickness-periodicity commensurability effects. NSF GRFP.

  5. Structural and morphological changes in P3HT thin film transistors applying an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, Deepak Kumar; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany); Flesch, Heinz; Resel, Roland [University of Siegen (Germany); Graz University of Technology (Austria)

    2010-07-01

    We report on electric field dependent crystalline structure and morphological changes of drop casting and spin coated poly(3-hexylthiophene) (P3HT) thin films. In order to probe the morphological changes induced by an applied electric field the samples were covered with thin source/drain electrodes separated by a small channel of 2 mm width. A series of x-ray reflectivity, X-ray grazing incidence out-of-plane and in-plane scans have been performed as function of the applied electric voltage. The (100) peak shows a decrease in intensity with increase of the applied electric field. This might be caused by Joule heating and the creation of current induced defects in the P3HT film. On other hand the (020) peak intensity shows much stronger changes with applied field. Considering the *-* stacking direction the measured effect can be directly related to a change in the electric transport. The observed changes in structure are reversible and the current-voltage cycle can be repeated several times. For X-ray reflectivity major changes have been found close to critical angle of total external reflection indicating the film becomes less dense and increases in surface roughness with increase of the voltage. This change in surface behaviour could be confirmed by in-situ AFM measurements.

  6. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

    2015-12-01

    Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  7. Controlled deposition of highly ordered soluble acene thin films: effect of morphology and crystal orientation on transistor performance

    NARCIS (Netherlands)

    Sele, C.W.; Kjellander, B.K.C.; Niesen, B.; Thornton, M.J.; Putten, J.B.P.H. van der; Myny, K.; Wondergem, H.J.; Moser, A.; Resel, R.; Breemen, A.J.J.M. van; Aerle, N.A.J.M. van; Heremans, P.; Anthony, J.E.; Gelinck, G.H.

    2009-01-01

    (Figure Presented) Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to produce a range of morphologies, including

  8. Morphological instability of Ag films caused by phase transition in the underlying Ta barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Mardani, Shabnam, E-mail: shabnam.mardani@angstrom.uu.se; Vallin, Örjan; Wätjen, Jörn Timo; Norström, Hans; Olsson, Jörgen; Zhang, Shi-Li, E-mail: shili.zhang@angstrom.uu.se [Solid State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-75121 (Sweden)

    2014-08-18

    Wide-bandgap (WBG) semiconductor technologies are maturing and may provide increased device performance in many fields of applications, such as high-temperature electronics. However, there are still issues regarding the stability and reliability of WBG devices. Of particular importance is the high-temperature stability of interconnects for electronic systems based on WBG-semiconductors. For metallization without proper encapsulation, morphological degradation can occur at elevated temperatures. Sandwiching Ag films between Ta and/or TaN layers in this study is found to be electrically and morphologically stabilize the Ag metallization up to 800 °C, compared to 600 °C for uncapped films. However, the barrier layer plays a key role and TaN is found to be superior to Ta, resulting in the best achieved stability, whereas the difference between Ta and TaN caps is negligible. The β-to-α phase transition in the underlying Ta barrier layer is identified as the major cause responsible for the morphological instability observed above 600 °C. It is shown that this phase transition can be avoided using a stacked Ta/TaN barrier.

  9. Surface morphology of vacuum-evaporated pentacene film on Si substrate studied by in situ grazing-incidence small-angle X-ray scattering: I. The initial stage of formation of pentacene film

    Science.gov (United States)

    Hirosawa, Ichiro; Watanabe, Takeshi; Koganezawa, Tomoyuki; Kikuchi, Mamoru; Yoshimoto, Noriyuki

    2018-03-01

    The progress of the surface morphology of a growing sub-monolayered pentacene film on a Si substrate was studied by in situ grazing-incidence small angle X-ray scattering (GISAXS). The observed GISAXS profiles did not show sizes of pentacene islands but mainly protuberances on the boundaries around pentacene film. Scattering of X-ray by residual pits in the pentacene film was also detected in the GISAXS profiles of an almost fully covered film. The average radius of pentacene protuberances increased from 13 to 24 nm as the coverage increased to 0.83 monolayer, and the most frequent radius was almost constant at approximately 9 nm. This result suggests that the population of larger protuberances increase with increasing lengths of boundaries of the pentacene film. It can also be considered that the detected protuberances were crystallites of pentacene, since the average size of protuberances was nearly equal to crystallite sizes of pentacene films. The almost constant characteristic distance of 610 nm and amplitudes of pair correlation functions at low coverages suggest that the growth of pentacene films obeyed the diffusion-limited aggregation (DLA) model, as previously reported. It is also considered that the sites of islands show a triangular distribution for small variations of estimated correlation distances.

  10. Effect of growth interruptions on TiO{sub 2} films deposited by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, D., E-mail: dyli@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou, 225127 (China); Goullet, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Carette, M. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré, 59652, Villeneuve d' Ascq (France); Granier, A. [Institut des Matériaux Jean Rouxel (IMN), UMR CNRS 6502, 2 rue de la Houssinière, 44322, Nantes (France); Landesman, J.P. [Institut de Physique de Rennes, UMR CNRS 6251, 263 av. Général Leclerc, 35042, Rennes (France)

    2016-10-01

    TiO{sub 2} films of ∼300 nm were deposited at low temperature (<140 °C) and pressure (0.4 Pa) using plasma enhanced chemical vapour deposition at the floating potential (V{sub f}) or the substrate self-bias voltage (V{sub b}) of −50 V. The impact of growth interruptions on the morphology, microstructure and optical properties of the films was investigated. The interruptions were carried out by stopping the plasma generation and gas injection once the increase of the layer thickness during each deposition step was about ∼100 nm. In one case of V{sub f}, the films of ∼300 nm exhibit a columnar morphology consisting of a bottom dense layer, an intermediate gradient layer and a top roughness layer. But the growth interruptions result in an increase of the dense layer thickness and a decrease of surface roughness. The film inhomogeneity has been identified by the in-situ real-time evolution of the kinetic ellipsometry (KE) parameters and the modeling process of spectroscopic ellipsometry (SE). The discrepancy of the refractive index measured by SE between bottom and upper layers can be reduced by growth interruptions. In the other case of V{sub b} = −50 V, the films exhibit a more compact arrangement which is homogeneous along the growth direction as confirmed by KE and SE. Both of Fourier transform infrared spectra and X-ray diffraction illustrate a phase transformation from anatase to rutile with the bias of −50 V, and also evidenced on the evolution of the refractive index dispersion curves. And a greatly increase of the refractive indice in the transparent range can be identified. However, the growth interruptions seem to have no influence on the morphology and optical properties in this case. - Highlights: • TiO{sub 2} films deposited by plasma processes at low temperature and pressure. • Influence of growth interruptions on structural and optical properties. • In-situ real-time ellipsometry measurements on film properties. • Structural and

  11. Growth and properties of ZnO films on polymeric substrate by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Kriisa, Merike; Kärber, Erki [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, Malle, E-mail: malle.krunks@ttu.ee [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, Valdek [Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Unt, Tarmo; Kukk, Mart; Mere, Arvo [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

    2014-03-31

    The growth of ZnO layers deposited by spray pyrolysis on polymeric substrate was studied. Zinc acetate precursor solution was sprayed onto preheated polyimide (PI) and glass reference substrates at 380 °C. The structural, morphological, optical and electrical properties of the layers were measured by X-ray diffraction, scanning electron microscopy, optical spectroscopy and van der Pauw and Hall method. ZnO:In layers could be grown on PI when deposited onto undoped ZnO layer acting as a buffer layer on PI. Independent of the substrate type, the ZnO/ZnO:In bilayer showed a mixed morphology from smooth canvas-like surface to large scrolled belt grains dependent on buffer layer morphology. Due to the formation of scrolled belts, the ZnO:In layer shows no preferential orientation, yet the preferred orientation of the ZnO buffer crystallites is (100) plane parallel to the substrate. The bilayers deposited on PI exhibit high light scattering capability (haze factor of 85–95% in the spectral region of 350–1500 nm). The resistivity of the ZnO:In film in bilayer on PI is 4.4 × 10{sup −2} Ω cm mainly due to low carrier mobility of 1.5 cm{sup 2}/Vs, the carrier concentration is 10{sup 20} cm{sup −3}. - Highlights: • ZnO:In layers were grown on polyimide substrate by spray pyrolysis. • The buffer layer morphology is controlled by the layer thickness and spray rate. • ZnO/ZnO:In bilayer morphology is dependent on the surface of buffer layer. • Rough buffer layer leads to rough bilayer with scrolled belts (diameter of 2–6 μm). • Due to scrolled belts layers show no preferential growth yet highly scatter light.

  12. Interface electronic structure and morphology of 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C8-BTBT) on Au film

    Science.gov (United States)

    Wang, Shitan; Niu, Dongmei; Lyu, Lu; Huang, Yingbao; Wei, Xuhui; Wang, Can; Xie, Haipeng; Gao, Yongli

    2017-09-01

    The interfacial electronic structure and morphology of 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT) on polycrystalline Au film was investigated with photoemission spectroscopy (PES), atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXRD). The transport barriers of holes and electrons at the interface are 1.72 eV and 2.12 eV, respectively, from the UPS measurement. There is no chemical reaction of C8-BTBT with Au from the XPS investigation of core levels Au 4f, C 1s and S 2p. The upmost molecules adopt a standing up configuration deduced from the diffraction peaks in GIXRD and the step height in AFM. Increasing order of the upright orientation of C8-BTBT molecules with film growth result in decreasing work function of the C8-BTBT thin film by forming an outward pointing dipole layer with the ordered end Csbnd H bonds.

  13. Metal Chloride Induced Formation of Porous Polyhydroxybutyrate (PHB) Films: Morphology, Thermal Properties and Crystallinity

    Science.gov (United States)

    Tan, W. L.; Yaakob, N. N.; Zainal Abidin, A.; Abu Bakar, M.; Abu Bakar, N. H. H.

    2016-06-01

    Polyhydroxybutyrate (PHB) films with highly porous structures were synthesized using a one phase system comprising of metal chloride/methanol/PHB/chloroform (MCl2/CH3OH/PHB/CHCl3). SEM analyses confirmed that the MCl2 (where M = Cu2+ or Ni2+) induced porous structures with pore sizes ranging from 0.3 - 2.0 μm. The average pore size increased with the increasing MCl2 content. There existed weak physical interactions between the PHB chains and MCl2 as revealed by FTIR and NMR spectroscopies. The residue of MCl2 in the porous PHB film does not exert significant influence on the thermal stability of PHB. Nevertheless, the crystallinity of the prepared film is enhanced, as MCl2 acts as the nucleation sites to promote the growth of spherullites.

  14. Electrochemical, morphological and microstructural characterization of carbon film resistor electrodes for application in electrochemical sensors

    International Nuclear Information System (INIS)

    Gouveia-Caridade, Carla; Soares, David M.; Liess, Hans-Dieter; Brett, Christopher M.A.

    2008-01-01

    The electrochemical and microstructural properties of carbon film electrodes made from carbon film electrical resistors of 1.5, 15, 140 Ω and 2.0 kΩ nominal resistance have been investigated before and after electrochemical pre-treatment at +0.9 V vs SCE, in order to assess the potential use of these carbon film electrodes as electrochemical sensors and as substrates for sensors and biosensors. The results obtained are compared with those at electrodes made from previously investigated 2 Ω carbon film resistors. Cyclic voltammetry was performed in acetate buffer and phosphate buffer saline electrolytes and the kinetic parameters of the model redox system Fe(CN) 6 3-/4- obtained. The 1.5 Ω resistor electrodes show the best properties for sensor development with wide potential windows, similar electrochemical behaviour to those of 2 Ω and close-to-reversible kinetic parameters after electrochemical pre-treatment. The 15 and 140 Ω resistor electrodes show wide potential windows although with slower kinetics, whereas the 2.0 kΩ resistor electrodes show poor cyclic voltammetric profiles even after pre-treatment. Electrochemical impedance spectroscopy related these findings to the interfacial properties of the electrodes. Microstructural and morphological studies were carried out using contact mode Atomic Force Microscopy (AFM), Confocal Raman spectroscopy and X-ray diffraction. AFM showed more homogeneity of the films with lower nominal resistances, related to better electrochemical characteristics. X-ray diffraction and Confocal Raman spectroscopy indicate the existence of a graphitic structure in the carbon films

  15. Electronic excitation induced modifications of optical and morphological properties of PCBM thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, T. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Singhal, R., E-mail: rsinghal.phy@mnit.ac.in [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Vishnoi, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Department of Physics, Vardhman (P.G.) College, Bijnor 246701, U.P. (India); Sharma, P. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017 (India); Patra, A.; Chand, S. [National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Lakshmi, G.B.V.S. [Inter University Accelerator Centre, Post Box No. 10502, New Delhi 110067 (India); Biswas, S.K. [Department of Metallurgical and Materials Engineering, Malaviya National Institute of Technology, Jaipur 302017 (India)

    2016-07-15

    Highlights: • Spin casted PCBM thin films are irradiated by 90 MeV Ni{sup 7+} ion beam. • The decrease in band gap was found after irradiation. • There is a decomposition of molecular bond due to ion irradiation. • Roughness is also found to be dependent on incident ion fluence. - Abstract: Phenyl C{sub 61} butyric acid methyl ester (PCBM) is a fullerene derivative and most commonly used in organic photovoltaic devices both as electron acceptor and transporting material due to high electron mobility. PCBM is easy to spin caste on some substrate as it is soluble in chlorobenzene. In this study, the spin coated thin films of PCBM (on two different substrate, glass and double sided silicon) were irradiated using 90 MeV Ni{sup 7+} swift heavy ion beam at low fluences ranging from 1 × 10{sup 9} to 1 × 10{sup 11} ions/cm{sup 2} to study the effect of ion beam irradiation. The pristine and irradiated PCBM thin films were characterized by UV–visible absorption spectroscopy and fourier transform infrared spectroscopy (FTIR) to investigate the optical properties before and after irradiation. These thin films were further analyzed using atomic force microscopy (AFM) to investigate the morphological modifications which are induced by energetic ions. The variation in optical band gap after irradiation was measured using Tauc’s relation from UV–visible absorption spectra. A considerable change was observed with increasing fluence in optical band gap of irradiated thin films of PCBM with respect to the pristine film. The decrease in FTIR band intensity of C{sub 60} cage reveals the polymerization reaction due to high energy ion impact. The roughness is also found to be dependent on incident fluences. This study throws light for the application of PCBM in organic solar cells in form of ion irradiation induced nanowires of PCBM for efficient charge carrier transportation in active layer.

  16. Skin morphological changes in growth hormone deficiency and acromegaly

    DEFF Research Database (Denmark)

    Lange, Merete Wolder; Thulesen, J; Feldt-Rasmussen, U

    2001-01-01

    To evaluate the histomorphology of skin and its appendages, especially eccrine sweat glands, in patients with GH disorders, because reduced sweating ability in patients with growth hormone deficiency (GHD) is associated with increased risk of hyperthermia under stressed conditions....

  17. Buckyball microwave plasmas: Fragmentation and diamond-film growth

    International Nuclear Information System (INIS)

    Gruen, D.M.; Liu, Shengzhong; Krauss, A.R.; Pan, Xianzheng.

    1993-08-01

    Microwave discharges (2.45 GHz) have been generated in C 60 -containing Ar produced by flowing Ar over fullerene-containing soot. Optical spectroscopy shows that the spectrum is dominated by the d 3 Πg-a 3 Πu Swan bands of C 2 and particularly the Δv = -2, -1, 0, +1, and +2 sequences. These results give direct evidence that C 2 is one of the products of C 60 fragmentation brought about, at least in part, by collisionally induced dissociation (CID). C 60 has been used as a precursor in a plasma-enhanced chemical vapor deposition (PECVD) experiment to grow diamond-thin films. The films, grown in an Ar/H 2 gas mixture (0.14% carbon content, 100 Torr, 20 sccm Ar, 4 sccm H 2 , 1500 W, 850 degree C substrate temperature), were characterized with SEM, XRD, and Raman spectroscopy. Growth rate was found to be ∼ 0.6 μ/hr. Assuming a linear dependence on carbon concentration, a growth rate at least six times higher than commonly observed using methane as a precursor, would be predicted at a carbon content of 1% based on C 60 . Energetic and mechanistic arguments are advanced to rationalize this result based on C 2 as the growth species

  18. Growth of AlN films and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

    2006-06-15

    Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Surface morphology and in-plane-epitaxy of SmBa2Cu3O7-δ films on SrTiO3 (001) substrates studied by STM and grazing incidence x-ray diffraction

    DEFF Research Database (Denmark)

    Jiang, Q.D.; Smilgies, D.M.; Feidenhans'l, R.

    1996-01-01

    The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films as ...... films above h(c2), introduction of screw dislocations leads to spiral growth.......The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films...... substrate. Three different types of surface morphology were observed by STM with increasing film thickness h: a) 2D growth for hh(c2). With GIXRD, a density modulation is observed in the films with a thickness below h(c2). For thicker...

  20. Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry

    National Research Council Canada - National Science Library

    George, Steven

    1997-01-01

    Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures...

  1. Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

    Science.gov (United States)

    Rajpal, Shashikant; Kumar, S. R.

    2018-04-01

    Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

  2. Cu-based metal-organic framework thin films: A morphological and photovoltaic study

    Science.gov (United States)

    Khajavian, Ruhollah; Ghani, Kamal

    2018-06-01

    This work explores the layer-by-layer (LbL) fabrication of [Cu2(bdc)2(bpy)]n thin films by using pyridine and acetic acid as capping agents onto mesoporous titania surface. While in the presence of acetic acid highly-ordered crystals with nanoplate morphology are formed, modulation with pyridine gives rise to formation of leaf-like crystals. In addition, processing sequence also matters when modulator is added. According to our results, modulators should be added to metal solution rather than linker/pillar during LbL assembly. These films were subsequently shown to generate photocurrent in a sandwich-type Grätzel solar cell device in response to simulated 1 sun illumination. The results also demonstrated that the device consisted of well-aligned nanoplates exhibits higher power conversion efficiency than the similar cell with disordered leaf-like crystals after iodine loading.

  3. The morphology, microstructure, and luminescent properties of CdS/CdTe films

    Energy Technology Data Exchange (ETDEWEB)

    Al-Jassim, M.M.; Dhere, R.G.; Jones, K.M.; Hasoon, F.S.; Sheldon, P. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    This paper is concerned with the characterization of CdS/CdTe polycrystalline thin films for solar cells. The morphology, microstructure, and luminescent properties are studied by a powerful array of characterization techniques. The presence of pinholes in 100-nm thick CdS is observed. The microstructure of CdS and CdTe films is shown to be heavily faulted polycrystalline. The effect of deposition temperature on the grain size and the microstructure is investigated. The interdiffusion of sulfur and tellurium at the CdS/CdTe interface is studied for the first time by a nanoprobe technique. Considerable amount of sulfur is detected in CdTe in the vicinity of the interface of samples deposited at 625 C. The recombination behavior of grain boundaries and intragrain defects is investigated in as-deposited and heat-treated samples.

  4. Synthesis of TiO_2 thin films by the SILAR method and study of the influence of annealing on its structural, morphological and optical properties

    International Nuclear Information System (INIS)

    Jimenez-Garcia, F N; Segura-Giraldo, B; Restrepo-Parra, E; Lopez-Lopez, G A

    2015-01-01

    Preparation and characterization of TiO_2 films were made. Films were synthesized on glass substrates by the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The preparation consisted of 150 cycles of a successive and alternate immersion of substrates in the precursor solution and in distilled water at 353 K. Growing was conducted at two conditions of the precursor solution which contained TiCl_3 and NH_2CONH_2: at room temperature and at 343 K. After the growth, films were annealed at 723 K for 2 hours. Regarding characterization, samples were studied using XRD, SEM and UV-Vis. Structural characterization results showed that, in general, the films presented an amorphous crystalline structure except those which were grown with precursor solution at 343 K and thermally treated after the growths, which presented an anatase crystalline structure. Concerning their morphology, a granular structure and a random distribution of a flower-like structure were observed. Grain sizes did not change significantly after annealing. The optical study was carried out taking into account an indirect transition allowed determining the band gap energy to be around 3.1 eV. This value, which is typical for TiO_2, decreases after annealing, usual for this type of films

  5. Morphology and N₂ Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes.

    Science.gov (United States)

    Fernandez, Ekain; Sanchez-Garcia, Jose Angel; Viviente, Jose Luis; van Sint Annaland, Martin; Gallucci, Fausto; Tanaka, David A Pacheco

    2016-02-10

    The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM), and the results indicate an increase of the grain size from 120 to 250-270 nm and film surface roughness from 4-5 to 10-12 nm when increasing the temperature from around 360-510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5-2-µm thick) films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO₂ 3-nm top layer supports (smallest pore size among all tested) present high N₂ permeance in the order of 10(-6) mol·m(-2)·s(-1)·Pa(-1) at room temperature.

  6. Morphology and N2 Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes

    Directory of Open Access Journals (Sweden)

    Ekain Fernandez

    2016-02-01

    Full Text Available The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM, and the results indicate an increase of the grain size from 120 to 250–270 nm and film surface roughness from 4–5 to 10–12 nm when increasing the temperature from around 360–510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5–2-µm thick films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO2 3-nm top layer supports (smallest pore size among all tested present high N2 permeance in the order of 10−6 mol·m−2·s−1·Pa−1 at room temperature.

  7. Morphology, optical and ionic conductivity studies of electron beam irradiated polymer electrolyte film

    Science.gov (United States)

    Devendrappa, H.; Yesappa, L.; Niranjana, M.; Ashokkumar, S. P.; Vijeth, H.; Ganesh, S.

    2018-04-01

    The effects of electron beam (EB) irradiation on morphology, optical properties and ionic conductivity of (PVdF-co-HFP: LiClO4=90:10, PHL10) electrolyte films. The FESEM image reveal increasing porous morphology with increasing EB dose confirms the polymer degradation as result more amorphousity. The optical absorbance was found to be increase with red shift in UV region and direct optical band gaps was found decreased upon EB dose from 3.70 eV to 2.65 eV. The ionic conductivity increases slowly in lower frequency, whereas rapidly increases at the high frequency and found about 8.28×10-4 S/cm at 120 kGy dose. The obtained results suggest that the physical properties of polymer electrolytes can be changed using EB irradiation as requirement.

  8. Optical and Morphological Studies of Thermally Evaporated PTCDI-C8 Thin Films for Organic Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Ronak Rahimi

    2013-01-01

    Full Text Available PTCDI-C8 due to its relatively high photosensitivity and high electron mobility has attracted much attention in organic semiconductor devices. In this work, thin films of PTCDI-C8 with different thicknesses were deposited on silicon substrates with native silicon dioxide using a vacuum thermal evaporator. Several material characterization techniques have been utilized to evaluate the structure, morphology, and optical properties of these films. Their optical constants (refractive index and extinction coefficient have been extracted from the spectroscopic ellipsometry (SE. X-ray reflectivity (XRR and atomic force microscopy (AFM were employed to determine the morphology and structure as well as the thickness and roughness of the PTCDI-C8 thin films. These films revealed a high degree of structural ordering within the layers. All the experimental measurements were performed under ambient conditions. PTCDI-C8 films have shown to endure ambient condition which allows pots-deposition characterization.

  9. A nonlinear model for surface segregation and solute trapping during planar film growth

    International Nuclear Information System (INIS)

    Han, Xiaoying; Spencer, Brian J.

    2007-01-01

    Surface segregation and solute trapping during planar film growth is one of the important issues in molecular beam epitaxy, yet the study on surface composition has been largely restricted to experimental work. This paper introduces some mathematical models of surface composition during planar film growth. Analytical solutions are obtained for the surface composition during growth

  10. Morphology and oxygen incorporation effect on antimicrobial activity of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rebelo, Rita, E-mail: ritarebelo@det.uminho.pt [2C2T, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); GRF-CFUM, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); CEB, Center for Biological Engineering, LIBRO—Laboratório de Biofilmes Rosário Oliveira, University of Minho, Campus de Gualtar, 4710-335 Braga (Portugal); Manninen, N.K. [GRF-CFUM, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); SEG-CEMUC, University of Coimbra, 3030-788 Coimbra (Portugal); Fialho, Luísa [GRF-CFUM, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Henriques, Mariana [CEB, Center for Biological Engineering, LIBRO—Laboratório de Biofilmes Rosário Oliveira, University of Minho, Campus de Gualtar, 4710-335 Braga (Portugal); Carvalho, Sandra [GRF-CFUM, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); SEG-CEMUC, University of Coimbra, 3030-788 Coimbra (Portugal)

    2016-05-15

    Highlights: • Ag and Ag{sub x}O thin films were deposited by non-reactive and reactive pulsed DC magnetron sputtering. • Coatings were characterized chemically, physically and structurally. • In order to verify the antibacterial behavior of the coatings, halo inhibition zone tests were realized for Staphylococcus epidermidis and Staphylococcus aureus. • Ag{sub x}O coating presented antibacterial behavior. - Abstract: Ag and Ag{sub x}O thin films were deposited by non-reactive and reactive pulsed DC magnetron sputtering, respectively, with the final propose of functionalizing the SS316L substrate with antibacterial properties. The coatings were characterized chemically, physically and structurally. The coatings nanostructure was assessed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), while the coatings morphology was determined by scanning electron microscopy (SEM). The XRD and XPS analyses suggested that Ag thin film is composed by metallic Ag, which crystallizes in fcc-Ag phase, while the Ag{sub x}O thin film showed both metallic Ag and Ag−O bonds, which crystalize in fcc-Ag and silver oxide phases. The SEM results revealed that Ag thin film formed a continuous layer, while Ag{sub x}O layer was composed of islands with hundreds of nanometers surrounded by small nanoparticles with tens of nanometers. The surface wettability and surface tension parameters were determined by contact angle measurements, being found that Ag and Ag{sub x}O surfaces showed very similar behavior, with all the surfaces showing a hydrophobic character. In order to verify the antibacterial behavior of the coatings, halo inhibition zone tests were realized for Staphylococcus epidermidis and Staphylococcus aureus. Ag coatings did not show antibacterial behavior, contrarily to Ag{sub x}O coating, which presented antibacterial properties against the studied bacteria. The presence of silver oxide phase along with the development of different morphology was

  11. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Science.gov (United States)

    Catena, Alberto; McJunkin, Thomas; Agnello, Simonpietro; Gelardi, Franco M.; Wehner, Stefan; Fischer, Christian B.

    2015-08-01

    Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  12. Growth, characterization and device development in monocrystalline diamond films

    Science.gov (United States)

    Davis, R. F.; Glass, J. T.; Nemanich, R. J.; Bozeman, S. P.; Sowers, A. T.

    1995-06-01

    Experimental and theoretical studies concerned with interface interactions of diamond with Si, Ni, and Ni3Si substrates have been conducted. Oriented diamond films deposited on (100) Si were characterized by polar Raman, polar x-ray diffraction (XRD), and cross-sectional high resolution transmission electron microscopy (HRTEM). These sutides showed that the diamond(100)/Si(100) interface adopted the 3:2-match arrangement rather than a 45 deg rotation. Extended Hueckel tight-binding (EHTB) electronic structure calculations for a model system revealed that the interface interaction favors the 3:2-match arrangement. Growth on polycrystalline Ni3Si resulted in oriented diamond particles; under the same growth conditions, graphite was formed on the nickel substrate. Our EHTB electronic structure calculations showed that the (111) and (100) surfaces of Ni3Si have a strong preference for diamond nucleation over graphite nucleation, but this was not the case for the (111) and (100) surfaces of Ni.

  13. Growth modes of pentacene films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Wisz, G.; Kuzma, M.; Virt, I.; Sagan, P.; Rudyj, I.

    2011-01-01

    Thin pentacene films were deposited on KCl and ITO/glass substrates by the pulsed laser deposition method (PLD) using a YAG:Nd 3+ laser with a second harmonic (λ = 532 nm). We compared the structure of the layer on differently oriented substrates with respect to the pentacene plasma plume - vertical and parallel orientation. The structure of the layers formed was examined using SEM, RHEED and THEED methods. The lattice parameters of the layer deposited on KCl were determined from THEED pattern (a = 5.928 A, b 7.874 A, c = 14,98 A, α = 76.54 o , β 75.17 o , γ = 89.20 o ). The preferred direction [11-bar 0] of the layer growth on KCl substrate was addressed. The effect of the substrate orientation results in a different growth mode of the layers.

  14. Growth of porous type anodic oxide films at micro-areas on aluminum exposed by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kikuchi, Tatsuya [Graduate School of Engineering, Hokkaido University, N13-W8, Kita-Ku, Sapporo 060-8628 (Japan)], E-mail: kiku@eng.hokudai.ac.jp; Sakairi, Masatoshi [Graduate School of Engineering, Hokkaido University, N13-W8, Kita-Ku, Sapporo 060-8628 (Japan); Takahashi, Hideaki [Asahikawa National College of Technology, Syunkohdai, 2-2, 1-6, Asahikawa 071-8142 (Japan)

    2009-11-30

    Aluminum covered with pore-sealed anodic oxide films was irradiated with a pulsed Nd-YAG laser to remove the oxide film at micro-areas. The specimen was re-anodized for long periods to examine the growth of porous anodic oxide films at the area where substrate had been exposed by measuring current variations and morphological changes in the oxide during the re-anodizing. The chemical dissolution resistance of the pore-sealed anodic oxide films in an oxalic acid solution was also examined by measuring time-variations in rest potentials during immersion. The resistance to chemical dissolution of the oxide film became higher with increasing pore-sealing time and showed higher values at lower solution temperatures. During potentiostatic re-anodizing at five 35-{mu}m wide and 4-mm long lines for 72 h after the film was removed the measured current was found to increase linearly with time. Semicircular columnar-shaped porous type anodic oxide was found to form during the re-anodizing at the laser-irradiated area, and was found to grow radially, thus resulting in an increase in the diameter. After long re-anodizing, the central and top parts of the oxide protruded along the longitudinal direction of the laser-irradiated area. The volume expansion during re-anodizing resulted in the formation of cracks, parallel to the lines, in the oxide film formed during the first anodizing.

  15. Deposition of matrix-free fullerene films with improved morphology by matrix-assisted pulsed laser evaporation (MAPLE)

    DEFF Research Database (Denmark)

    Canulescu, Stela; Schou, Jørgen; Fæster, Søren

    2013-01-01

    Thin films of C60 were deposited by matrix-assisted pulsed laser evaporation (MAPLE) from a frozen target of anisole with 0.67 wt% C60. Above a fluence of 1.5 J/cm2 the C60 films are strongly non-uniform and are resulting from transfer of matrix-droplets containing fullerenes. At low fluence...... the fullerene molecules in the films are intact, the surface morphology is substantially improved and there are no measurable traces of the matrix molecules in the film. This may indicate a regime of dominant evaporation at low fluence which merges into the MAPLE regime of liquid ejection of the host matrix...

  16. Effect of sol concentration on the structural, morphological, optical and photoluminescence properties of zirconia thin films

    International Nuclear Information System (INIS)

    Joy, K.; Maneeshya, L.V.; Thomas, Jijimon K.; Thomas, P.V.

    2012-01-01

    ZrO 2 thin films were deposited on quartz substrates from 10 wt.%, 20 wt.% and 40 wt.% solutions of Zirconium-n-butoxide in isopropanol by sol–gel dip-coating technique. Higher concentrated sols of 20 wt.% and 40 wt.% exhibited faster gelation, where as 10 wt.% sol remained stable for two months and films synthesized from this sol remained transparent and continuous even for 12 coatings. Ellipsometric study revealed that refractive index of the films increased with increase in sol concentration which is ascribed to the decrease in porosity. X-ray diffraction study showed that a tailoring of grain size from 7.9 to 39.2 nm is possible with increase in sol concentration. Atomic force microscopy studies showed a change in growth mode from vertical to lateral mode with increase in sol concentration. The film surface revealed positive skewness and high kurtosis values which make them favorable for tribological applications. The average optical transmittance in the visible region is highest (greater than 90%) for the film deposited from 10 wt.% sol. The optical band gap decreased from 5.74 to 5.62 eV with increase in the sol concentration. Photoluminescence (PL) spectra of the films exhibit an increase in the emission intensity with increase in sol concentration which substantiates better crystalline quality of the film deposited from 40 wt.% sol and increase in oxygen vacancies. The “Red shift” of the PL spectra with increase in sol concentration originates from the increase in the grain size with sol concentration which makes it suitable for generation of solid state lighting in light emitting diode. - Highlights: ► ZrO 2 thin films were deposited on quartz substrates by sol-gel method. ► Control of grain size with sol concentration. ► Microstructure studies showed a change in growth mode from vertical to lateral mode. ► The optical band gap decreased with increase in grain size and sol concentration. ► Dependence of photoluminescence on particle size

  17. Effect of nickel seed layer on growth of α-V{sub 2}O{sub 5} nanostructured thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat; Singh, Megha, E-mail: meghasingh-08@yahoo.com; Reddy, G. B. [Thin film Laboratory, Department of Physics, Indian Institute of Technology Delhi-110016 (India)

    2015-08-28

    In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ∼ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V{sub 2}O{sub 5} film deposited on both substrates are carried out by SEM, revealed that features of V{sub 2}O{sub 5} NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.

  18. Evolution effects of the copper surface morphology on the nucleation density and growth of graphene domains at different growth pressures

    Energy Technology Data Exchange (ETDEWEB)

    Hedayat, Seyed Mahdi [Transport Phenomena & Nanotechnology Lab., School of Chemical Engineering, College of Engineering, University of Tehran (Iran, Islamic Republic of); Karimi-Sabet, Javad, E-mail: j_karimi@alum.sharif.edu [NFCRS, Nuclear Science and Technology Research Institute, Tehran (Iran, Islamic Republic of); Shariaty-Niassar, Mojtaba, E-mail: mshariat@ut.ac.ir [Transport Phenomena & Nanotechnology Lab., School of Chemical Engineering, College of Engineering, University of Tehran (Iran, Islamic Republic of)

    2017-03-31

    Highlights: • Manipulation of the Cu surface morphology in a wide range by electropolishing treatment. • Comparison of the nucleation density of graphene at low pressure and atmospheric pressure CVD processes. • Controlling the evolution of the Cu surface morphology inside a novel confined space. • Growth of large-size graphene domains. - Abstract: In this work, we study the influence of the surface morphology of the catalytic copper substrate on the nucleation density and the growth rate of graphene domains at low and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) processes. In order to obtain a wide range of initial surface morphology, precisely controlled electropolishing methods were developed to manipulate the roughntreess value of the as-received Cu substrate (RMS = 30 nm) to ultra-rough (RMS = 130 nm) and ultra-smooth (RMS = 2 nm) surfaces. The nucleation and growth of graphene domains show obviously different trends at LPCVD and APCVD conditions. In contrast to APCVD condition, the nucleation density of graphene domains is almost equal in substrates with different initial roughness values at LPCVD condition. We show that this is due to the evolution of the surface morphology of the Cu substrate during the graphene growth steps. By stopping the surface sublimation of copper substrate in a confined space saturated with Cu atoms, the evolution of the Cu surface was impeded. This results in the reduction of the nucleation density of graphene domains up to 24 times in the pre-smoothed Cu substrates at LPCVD condition.

  19. Evolution effects of the copper surface morphology on the nucleation density and growth of graphene domains at different growth pressures

    International Nuclear Information System (INIS)

    Hedayat, Seyed Mahdi; Karimi-Sabet, Javad; Shariaty-Niassar, Mojtaba

    2017-01-01

    Highlights: • Manipulation of the Cu surface morphology in a wide range by electropolishing treatment. • Comparison of the nucleation density of graphene at low pressure and atmospheric pressure CVD processes. • Controlling the evolution of the Cu surface morphology inside a novel confined space. • Growth of large-size graphene domains. - Abstract: In this work, we study the influence of the surface morphology of the catalytic copper substrate on the nucleation density and the growth rate of graphene domains at low and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) processes. In order to obtain a wide range of initial surface morphology, precisely controlled electropolishing methods were developed to manipulate the roughntreess value of the as-received Cu substrate (RMS = 30 nm) to ultra-rough (RMS = 130 nm) and ultra-smooth (RMS = 2 nm) surfaces. The nucleation and growth of graphene domains show obviously different trends at LPCVD and APCVD conditions. In contrast to APCVD condition, the nucleation density of graphene domains is almost equal in substrates with different initial roughness values at LPCVD condition. We show that this is due to the evolution of the surface morphology of the Cu substrate during the graphene growth steps. By stopping the surface sublimation of copper substrate in a confined space saturated with Cu atoms, the evolution of the Cu surface was impeded. This results in the reduction of the nucleation density of graphene domains up to 24 times in the pre-smoothed Cu substrates at LPCVD condition.

  20. Attachment and growth of human bone marrow derived mesenchymal stem cells on regenerated antheraea pernyi silk fibroin films

    Energy Technology Data Exchange (ETDEWEB)

    Luan Xiying [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Wang Yong [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Duan Xiang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Duan Qiaoyan [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Li Mingzhong [School of Materials Engineering, Suzhou University, Suzhou 215006 (China); Lu Shenzhou [School of Materials Engineering, Suzhou University, Suzhou 215006 (China); Zhang Huanxiang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China); Zhang Xueguang [Institute of Medical Biotechnology, Jiangsu Province Key Laboratory of Stem Cell, Suzhou University, Suzhou 215007 (China)

    2006-12-15

    Silk fibroin of the silkworm Bombyx mori has been studied extensively, while the research on Antheraea pernyi silk fibroin (A. pernyi SF) in biomaterials is only at an early stage. In this study, the attachment, morphology, growth and phenotype of human bone marrow derived mesenchymal stem cells (hBMSCs) cultured on the regenerated A. pernyi SF films were studied in vitro. The results indicated that the attachment of hBMSCs on the regenerated A. pernyi SF films was almost the same as that on the collagen films. MTT and cell counting analyses demonstrated that the growth of hBMSCs on the regenerated A. pernyi SF films was better than that on controls. Moreover, electron scanning microscopy and fluorescence-activated cell sorting assays showed that the regenerated A. pernyi SF supported hBMSCs growth and functional maintenance compared with the controls. These data suggest that the regenerated A. pernyi SF, like Bombyx mori silk fibroin (B. mori SF) and collagen, can support hBMSCs attachment, growth and phenotypic maintenance, and has better biocompatibilities for hBMSCs in vitro culture.

  1. Attachment and growth of human bone marrow derived mesenchymal stem cells on regenerated antheraea pernyi silk fibroin films

    International Nuclear Information System (INIS)

    Luan Xiying; Wang Yong; Duan Xiang; Duan Qiaoyan; Li Mingzhong; Lu Shenzhou; Zhang Huanxiang; Zhang Xueguang

    2006-01-01

    Silk fibroin of the silkworm Bombyx mori has been studied extensively, while the research on Antheraea pernyi silk fibroin (A. pernyi SF) in biomaterials is only at an early stage. In this study, the attachment, morphology, growth and phenotype of human bone marrow derived mesenchymal stem cells (hBMSCs) cultured on the regenerated A. pernyi SF films were studied in vitro. The results indicated that the attachment of hBMSCs on the regenerated A. pernyi SF films was almost the same as that on the collagen films. MTT and cell counting analyses demonstrated that the growth of hBMSCs on the regenerated A. pernyi SF films was better than that on controls. Moreover, electron scanning microscopy and fluorescence-activated cell sorting assays showed that the regenerated A. pernyi SF supported hBMSCs growth and functional maintenance compared with the controls. These data suggest that the regenerated A. pernyi SF, like Bombyx mori silk fibroin (B. mori SF) and collagen, can support hBMSCs attachment, growth and phenotypic maintenance, and has better biocompatibilities for hBMSCs in vitro culture

  2. Morphology and optical properties of poly(9,9' dioctyfluorene) films

    International Nuclear Information System (INIS)

    Ariu, Marilu

    2002-01-01

    This thesis concerns a study of the optical properties of the polymer poly(9,9'dioctylfluorene) (PFO). Polyfluorene polymers represent the current state-of-the-art materials for use in optoelectronic devices. Recently there has been a growing interest in investigating how changes in polymer morphology affect their optical properties and in turn how such information can be used to optimise device performance. The first part of this thesis deals with the characterization of PFO films prepared in four morphological phases, namely: as spin coated glass (SC PFO), nematic quenched glass (NQ PFO), crystalline (X PFO) and PFO having an extended chain conformation (β-phase PFO). Infrared (FT-IR) and Raman spectroscopy have been used in order to correlate the polymer chain conformations in the four phases with the results reported from optical measurements. In order to do this, it has been necessary to analyse and assign the origin of the vibrational modes detected. This has been achieved via comparison with molecules chemically similar to PFO. Theoretical modelling has been used to confirm our assignment. The changes detected in the Raman and Infrared spectra indicate that the polymer chains adopt a longer conjugation length in the X and β-phase films. It appears that the side chains in the X PFO and β-phase conformation have a lower concentration of defects (alternation of gauche and trans conformation) than is observed in the SC film. Low temperature Raman and photoluminescence (PL) measurements are used to identify the vibrational modes that are more strongly coupled with the S 0- >S 1 electronic transition. The second part of this thesis leads with the study of the influence of temperature on the exciton migration process in the SC and β-phase films. At low temperature the migration process is slower and it is detectable via picosecond time resolved luminescence measurements. I have investigated the effect of temperature on the absorption, PL and PL efficiency (PLQY

  3. Growth of α-V{sub 2}O{sub 5} nanostructured thin films as a function of deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Megha, E-mail: meghasingh.life@gmail.com; Sharma, Rabindar K.; Reddy, G. B. [Thin film Laboratory, Department of Physics, Indian Institute of Technology Delhi -110016 (India)

    2016-05-23

    In this communication, we synthesizedvanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using four different methods for obtaining vanadate species namely thermal evaporation (source of vanadate species are V{sub 2}O{sub 5} powder and vanadium metal foil) and plasma assisted sublimation process (source of vanadate species are V{sub 2}O{sub 5} powder and vanadium metal foil). The effect of plasmaon morphological and structural propertieshave been systematicallystudied. XRD revealed thermal evaporation process yielded amorphous films whereassublimation process yielded highly crystalline α-V{sub 2}O{sub 5} films. HRTEM of nanobelts show, the growth is preferred in (001) crystallographic direction with interplanar distance of 0.43 nm. XPS revealed O/V ratio of ~2.4, which nearly agrees with standard V{sub 2}O{sub 5} stoichiometry. SEM revealed deposition process affect morphology of films; thermal evaporation results in smoother film while plasma assisted sublimation process reveals nanoflakes and nanobelts (NBs). All the results are inconcordance with each other.

  4. Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskelae, M.

    2004-01-01

    Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous

  5. Nucleation, growth and evolution of calcium phosphate films on calcite.

    Science.gov (United States)

    Naidu, Sonia; Scherer, George W

    2014-12-01

    Marble, a stone composed of the mineral calcite, is subject to chemically induced weathering in nature due to its relatively high dissolution rate in acid rain. To protect monuments and sculpture from corrosion, we are investigating the application of thin layers of hydroxyapatite (HAP) onto marble. The motivation for using HAP is its low dissolution rate and crystal and lattice compatibility with calcite. A mild, wet chemical synthesis route, in which diammonium hydrogen phosphate salt was reacted with marble, alone and with cationic and anionic precursors under different reaction conditions, was used to produce inorganic HAP layers on marble. Nucleation and growth on the calcite substrate was studied, as well as metastable phase evolution, using scanning electron microscopy, grazing incidence X-ray diffraction, and atomic force microscopy. Film nucleation was enhanced by surface roughness. The rate of nucleation and the growth rate of the film increased with cationic (calcium) and anionic (carbonate) precursor additions. Calcium additions also influenced phase formation, introducing a metastable phase (octacalcium phosphate) and a different phase evolution sequence. Copyright © 2014 Elsevier Inc. All rights reserved.

  6. Controlling morphology, mesoporosity, crystallinity, and photocatalytic activity of ordered mesoporous TiO{sub 2} films prepared at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Elgh, Björn; Yuan, Ning; Palmqvist, Anders E. C. [Applied Surface Chemistry, Department of Chemical and Biological Engineering, Chalmers University of Technology, SE 412 96 Göteborg (Sweden); Cho, Hae Sung; Terasaki, Osamu [Graduate School of EEWS (WCU), KAIST, Daejeon 305-701 (Korea, Republic of); Magerl, David; Philipp, Martine; Müller-Buschbaum, Peter [Lehrstuhl für Funktionelle Materialien, Physik-Department, Technische Universität München, 85748 Garching (Germany); Roth, Stephan V. [DESY, Notkestrasse 85, 22603 Hamburg (Germany); Yoon, Kyung Byung [Department of Chemistry, Sogang University, Seoul 121-742 (Korea, Republic of)

    2014-11-01

    Partly ordered mesoporous titania films with anatase crystallites incorporated into the pore walls were prepared at low temperature by spin-coating a microemulsion-based reaction solution. The effect of relative humidity employed during aging of the prepared films was studied using SEM, TEM, and grazing incidence small angle X-ray scattering to evaluate the mesoscopic order, porosity, and crystallinity of the films. The study shows unambiguously that crystal growth occurs mainly during storage of the films and proceeds at room temperature largely depending on relative humidity. Porosity, pore size, mesoscopic order, crystallinity, and photocatalytic activity of the films increased with relative humidity up to an optimum around 75%.

  7. Influence of Doping Concentration on Dielectric, Optical, and Morphological Properties of PMMA Thin Films

    Directory of Open Access Journals (Sweden)

    Lyly Nyl Ismail

    2012-01-01

    Full Text Available PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA concentration increased. The dielectric loss is in the range of 0.01 ~ –0.01. All samples show dielectric characteristics which have dielectric loss is less than 0.05. The optical properties for thin films were measured at room temperature across 200 ~ 1000 nm wavelength region. All samples are highly transparent. The energy band gaps are in the range of 3.6 eV to 3.9 eV when the PMMA concentration increased. The morphologies of the samples show that all samples are uniform and the surface roughness increased as the concentration increased. From this study, it is known that, the dielectric, optical, and morphology properties were influenced by the amount of PMMA concentration in the solution.

  8. Morphology and Growth of Titania Nanotubes : Nanostructuring and Applications

    OpenAIRE

    Albu, Sergiu P.

    2012-01-01

    Self-ordering phenomena during anodic oxidation of metals and the formation of porous oxides have been of a great interest to science and technology for more than 50 years. Particularly, after Masuda et al. demonstrated ideally ordered porous alumina by fine tuning the experimental parameters during aluminum anodization, these structures were increasingly used as a template for the deposition and growth of large varieties of 1D functional materials. For some time, such self-organized oxide st...

  9. Stabilization of N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)benzidine thin film morphology with UV light

    Energy Technology Data Exchange (ETDEWEB)

    Tomović, A.Ž.; Markešević, N. [Institute of Physics, University of Belgrade, Pregrevica 118, 11000 Belgrade (Serbia); Scarpellini, M.; Bovio, S. [Interdisciplinary Centre for Nanostructured Materials and Interfaces (CIMAINA), Università di Milano, Via Celoria 16, 20133 Milan (Italy); Lucenti, E. [Interdisciplinary Centre for Nanostructured Materials and Interfaces (CIMAINA), Università di Milano, Via Celoria 16, 20133 Milan (Italy); Institute of Molecular Science and Technology of CNR, via Golgi 19, 20133 Milan (Italy); Milani, P. [Interdisciplinary Centre for Nanostructured Materials and Interfaces (CIMAINA), Università di Milano, Via Celoria 16, 20133 Milan (Italy); Zikic, R. [Institute of Physics, University of Belgrade, Pregrevica 118, 11000 Belgrade (Serbia); Jovanović, V.P., E-mail: vladimir.jovanovic@ipb.ac.rs [Institute of Physics, University of Belgrade, Pregrevica 118, 11000 Belgrade (Serbia); Srdanov, V.I. [Interdisciplinary Centre for Nanostructured Materials and Interfaces (CIMAINA), Università di Milano, Via Celoria 16, 20133 Milan (Italy)

    2014-07-01

    Owing to their low glass transition temperature, T{sub g}, amorphous thin films of N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)benzidine (TPD) undergo morphological changes even at room temperature. It has been noticed previously that exposure to UV light can increase apparent T{sub g} of TPD films and thus stabilize their morphology. However, the reason behind increase in structural stability was not examined at the time. Here we present evidence that TPD molecules undergo photo-oxidation in air when exposed to λ ≈ 350 nm radiation and that less than 5% of the photo-oxidized species are needed to prevent dewetting of thin TPD films. We propose that photo-oxidized TPD species bind strongly to both ordinary TPD molecules and to terminal hydroxyl groups at the substrate surface, which decreases mobility of TPD molecules and makes thin TPD film less prone to morphology changes. - Highlights: • We made variable thickness TPD films and exposed them to UV light under ambient conditions. • Mass spectroscopy and proton NMR measurements of irradiated and pristine TPD films • TPD molecules undergo oxidation process under UV light irradiation. • Dipole–dipole interactions may be responsible for stabilization of morphological changes.

  10. Temperature-dependent evolution of chemisorbed digermane in Ge thin film growth

    International Nuclear Information System (INIS)

    Eres, D.; Sharp, J.W.

    1992-01-01

    The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time- resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses

  11. Influence of Surface Roughness and Agitation on the Morphology of Magnetite Films Electrodeposited on Carbon Steel Substrates

    Directory of Open Access Journals (Sweden)

    Soon-Hyeok Jeon

    2016-11-01

    Full Text Available In this work, we investigated the effects of surface roughness and agitation on the morphology of magnetite films electrodeposited from alkaline Fe(III-triethanolamine (TEA solutions on carbon steel substrates. The surface roughness of the carbon steel substrates was maintained in the range of 1.64–0.06 μm by using mechanical grinding and polishing methods. The agitation speed was set at 0 and 900 rpm during the electrodeposition process. The particle size and surface roughness value of the magnetite films gradually decreased with decreasing substrate roughness. However, the influence of the substrate roughness on the thickness of the magnetite film was negligible. The morphology of the magnetite film fabricated at 900 rpm appeared to be highly faceted compared to that of the magnetite film produced at 0 rpm. The thickness and surface roughness of the magnetite film significantly increased with the agitation speed, which also significantly affected the electrodeposition efficiency. The effects of substrate surface roughness and agitation on the morphology of magnetite films electrodeposited on carbon steel substrates were also discussed. The obtained results provide critical information for the simulation of magnetite deposits on carbon steel pipes in the secondary systems of nuclear power plants.

  12. Morphology-controlled electrodeposition of Cu2O microcrystalline particle films for application in photocatalysis under sunlight

    International Nuclear Information System (INIS)

    Wu, Guodong; Zhai, Wei; Sun, Fengqiang; Chen, Wei; Pan, Zizhao; Li, Weishan

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► PEG was used to electro-deposit Cu 2 O microcrystalline particle films. ► Morphologies of Cu 2 O microcrystals could be controlled by the amount of PEG. ► The films showed regularly varied photocatalytic activities under sunlight. ► The films could be recycled and showed stable activities. -- Abstract: Morphology-controlled Cu 2 O microcrystalline particle films had been successfully electrodeposited on tin-doped indium oxide glass substrates in CuSO 4 solutions containing different amounts of polyethylene glycol (PEG) additives. With an increase of PEG, microcrystals gradually changed from irregular shapes to cubes, octahedrons, and spherical shapes. Sizes increasingly became smaller with an increase of PEG under the same deposition time. These films had been first used as recyclable photocatalysts and showed excellent and photocatalytic activities in photodegradation of methylene blue (MB) under sunlight. Activities were regularly varied relative to the morphologies of films controlled by the amount of PEG and could be further enhanced by adding a little amount of hydrogen peroxide in the MB solution. The method for controllable preparation of Cu 2 O microcrystals with photocatalytic activities was simple and inexpensive. The as-prepared particle films could also be used in photodegradation of many other pollutants under sunlight.

  13. Self-assembled morphologies of an amphiphilic Y-shaped weak polyelectrolyte in a thin film.

    Science.gov (United States)

    Mu, Dan; Li, Jian-Quan; Feng, Sheng-Yu

    2017-11-29

    Different from the self-assembly of neutral polymers, polyelectrolytes self-assemble into smaller aggregates with a more loosely assembled structure, which results from the repulsive forces acting between similar electrical compositions with the introduction of ions. The Y-shaped weak polyelectrolytes self-assemble into a core-shell type cylindrical structure with a hexagonal arrangement in a thin film, whose thickness is smaller than the gyration radius of the polymer chain. The corresponding formation mechanism consists of enrichment of the same components, adjustment of the shape of the aggregate, and the subsequent separation into individual aggregates. With the increase in the thickness of the thin film until it exceeds the gyration radius of the polymer chain, combined with the greater freedom of movement along the direction of thin film thickness, the self-assembled structure changes into a micellar structure. Under confinement, the repulsive force to the polymeric components is weakened by the repulsive forces among polyelectrolyte components with like charges, and this helps in generating aggregates with more uniform size and density distribution. In particular, when the repulsive force between the walls and the core forming components is greater than that between the walls and the shell forming components, such asymmetric confinement produces a crossed-cylindrical structure with nearly perpendicular arrangement of two cylinder arrays. Similarly, a novel three-crossed cylinder morphology is self-assembled upon removal of confinement.

  14. Identification of nanoscale structure and morphology reconstruction in oxidized a-SiC:H thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vasin, A.V.; Rusavsky, A.V.; Nazarov, A.N.; Lysenko, V.S.; Lytvyn, P.M.; Strelchuk, V.V. [Lashkaryov Institute of Semiconductor Physics, 41 Nauki Pr., Kiev 03028 (Ukraine); Kholostov, K.I.; Bondarenko, V.P. [Belarusian State University of Informatics and Radioelectronics, 6P. Brovki Str., Minsk 220013 (Belarus); Starik, S.P. [Bakul Institute of Superhard Materials, 2 Avtzavodskaya Str., Kiev 04074 (Ukraine)

    2012-11-01

    Highlights: Black-Right-Pointing-Pointer Increase of magnetron discharge power results in densification of a-SiC:H thin films. Black-Right-Pointing-Pointer The denser a-SiC:H material the better resistance to oxidation by oxygen. Black-Right-Pointing-Pointer Oxidation of soft a-SiC:H films can result in increase of electric conductivity. Black-Right-Pointing-Pointer Formation of graphitic clusters was found in a-SiC:H after annealing in oxygen. - Abstract: Oxidation behavior of a-SiC:H layers deposited by radio-frequency magnetron sputtering technique was examined by Kelvin probe force microscopy (KPFM) in combination with scanning electron microscopy, Fourier-transform infra-red spectroscopy and submicron selected area Raman scattering spectroscopy. Partially oxidized a-SiC:H samples (oxidation at 600 Degree-Sign C in oxygen) were examined to clarify mechanism of the oxidation process. Nanoscale and microscale morphological defects (pits) with dimension of about 50 nm and several microns respectively have appeared after thermal treatment. KPFM measurements exhibited the surface potential of the material in micro pits is significantly smaller in comparison with surrounding material. Submicron RS measurements indicates formation of graphite-like nano-inclusions in the pit defects. We conclude that initial stage of oxidation process in a-SiC:H films takes place not homogeneously throughout the layer but it is initiated in local nanoscale regions followed by spreading over all layer.

  15. Self-assembly morphology effects on the crystallization of semicrystalline block copolymer thin film

    Science.gov (United States)

    Wei, Yuhan; Pan, Caiyuan; Li, Binyao; Han, Yanchun

    2007-03-01

    Self-assembly morphology effects on the crystalline behavior of asymmetric semicrystalline block copolymer polystyrene-block-poly(L-lactic acid) thin film were investigated. Firstly, a series of distinctive self-assembly aggregates, from spherical to ellipsoid and rhombic lamellar micelles (two different kinds of rhombic micelles, defined as rhomb 1 and rhomb 2) was prepared by means of promoting the solvent selectivity. Then, the effects of these self-assembly aggregates on crystallization at the early stage of film evolution were investigated by in situ hot stage atomic force microscopy. Heterogeneous nucleation initiated from the spherical micelles and dendrites with flat on crystals appeared with increasing temperature. At high temperature, protruding structures were observed due to the thickening of the flat-on crystals and finally more thermodynamically stable crystallization formed. Annealing the rhombic lamellar micelles resulted in different phenomena. Turtle-shell-like crystalline structure initiated from the periphery of the rhombic micelle 1 and spread over the whole film surface in the presence of mostly noncrystalline domain interior. Erosion and small hole appeared at the surface of the rhombic lamellar micelle 2; no crystallization like that in rhomb 1 occurred. It indicated that the chain-folding degree was different in these two micelles, which resulted in different annealing behaviors.

  16. Nanowire growth from the viewpoint of the thin film polylayer growth theory

    Science.gov (United States)

    Kashchiev, Dimo

    2018-03-01

    The theory of polylayer growth of thin solid films is employed for description of the growth kinetics of single-crystal nanowires. Expressions are derived for the dependences of the height h and radius r of a given nanowire on time t, as well as for the h(r) dependence. These dependences are applicable immediately after the nanowire nucleation on the substrate and thus include the period during which the nucleated nanowire changes its shape from that of cap to that of column. The analysis shows that the nanowire cap-to-column shape transition is continuous and makes it possible to kinetically define the nanowire shape-transition radius by means of the nanowire radial and axial growth rates. The obtained h(t), r(t) and h(r) dependences are found to provide a good description of available experimental data for growth of self-nucleated GaN nanowires by the vapor-solid mechanism.

  17. An evaluation of chondrocyte morphology and gene expression on superhydrophilic vertically-aligned multi-walled carbon nanotube films

    International Nuclear Information System (INIS)

    Antonioli, Eliane; Lobo, Anderson O.; Ferretti, Mario; Cohen, Moisés; Marciano, Fernanda R.; Corat, Evaldo J.; Trava-Airoldi, Vladimir J.

    2013-01-01

    Cartilage serves as a low-friction and wear-resistant articulating surface in diarthrodial joints and is also important during early stages of bone remodeling. Recently, regenerative cartilage research has focused on combinations of cells paired with scaffolds. Superhydrophilic vertically aligned carbon nanotubes (VACNTs) are of particular interest in regenerative medicine. The aim of this study is to evaluate cell expansion of human articular chondrocytes on superhydrophilic VACNTs, as well as their morphology and gene expression. VACNT films were produced using a microwave plasma chamber on Ti substrates and submitted to an O 2 plasma treatment to make them superhydrophilic. Human chondrocytes were cultivated on superhydrophilic VACNTs up to five days. Quantitative RT-PCR was performed to measure type I and type II Collagen, Sox9, and Aggrecan mRNA expression levels. The morphology was analyzed by scanning electron microscopy (SEM) and confocal microscopy. SEM images demonstrated that superhydrophilic VACNTs permit cell growth and adhesion of human chondrocytes. The chondrocytes had an elongated morphology with some prolongations. Chondrocytes cultivated on superhydrophilic VACNTs maintain the level expression of Aggrecan, Sox9, and Collagen II determined by qPCR. This study was the first to indicate that superhydrophilic VACNTs may be used as an efficient scaffold for cartilage or bone repair. Highlights: ► Chondrocytes were cultivated on Superhydrophilic Vertically Aligned Multiwall Carbon Nanotubes (VACNT). ► We have shown a correlation between gene expression and thermodynamics aspects. ► Superhydrhophilic VACNT will be an excellent substrate for cartilage and bone tissue regeneration.

  18. An evaluation of chondrocyte morphology and gene expression on superhydrophilic vertically-aligned multi-walled carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Antonioli, Eliane, E-mail: eliane.antonioli@einstein.br [Research and Education Institute, Hospital Israelita Albert Einstein, Sao Paulo, SP (Brazil); Lobo, Anderson O., E-mail: aolobo@univap.br [Laboratory of Biomedical Nanotechnology, Universidade do Vale do Paraiba, Sao Jose dos Campos, Sao Paulo (Brazil); Ferretti, Mario, E-mail: ferretti@einstein.br [Research and Education Institute, Hospital Israelita Albert Einstein, Sao Paulo, SP (Brazil); Ortophedic Division, Federal University of Sao Paulo, SP (Brazil); Cohen, Moises, E-mail: m.cohen@uol.com.br [Research and Education Institute, Hospital Israelita Albert Einstein, Sao Paulo, SP (Brazil); Ortophedic Division, Federal University of Sao Paulo, SP (Brazil); Marciano, Fernanda R., E-mail: femarciano@uol.com.br [Laboratory of Biomedical Nanotechnology, Universidade do Vale do Paraiba, Sao Jose dos Campos, Sao Paulo (Brazil); Corat, Evaldo J., E-mail: corat@las.inpe.br [Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, Sao Paulo (Brazil); Trava-Airoldi, Vladimir J., E-mail: vladimir@las.inpe.br [Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Sao Jose dos Campos, Sao Paulo (Brazil)

    2013-03-01

    Cartilage serves as a low-friction and wear-resistant articulating surface in diarthrodial joints and is also important during early stages of bone remodeling. Recently, regenerative cartilage research has focused on combinations of cells paired with scaffolds. Superhydrophilic vertically aligned carbon nanotubes (VACNTs) are of particular interest in regenerative medicine. The aim of this study is to evaluate cell expansion of human articular chondrocytes on superhydrophilic VACNTs, as well as their morphology and gene expression. VACNT films were produced using a microwave plasma chamber on Ti substrates and submitted to an O{sub 2} plasma treatment to make them superhydrophilic. Human chondrocytes were cultivated on superhydrophilic VACNTs up to five days. Quantitative RT-PCR was performed to measure type I and type II Collagen, Sox9, and Aggrecan mRNA expression levels. The morphology was analyzed by scanning electron microscopy (SEM) and confocal microscopy. SEM images demonstrated that superhydrophilic VACNTs permit cell growth and adhesion of human chondrocytes. The chondrocytes had an elongated morphology with some prolongations. Chondrocytes cultivated on superhydrophilic VACNTs maintain the level expression of Aggrecan, Sox9, and Collagen II determined by qPCR. This study was the first to indicate that superhydrophilic VACNTs may be used as an efficient scaffold for cartilage or bone repair. Highlights: Black-Right-Pointing-Pointer Chondrocytes were cultivated on Superhydrophilic Vertically Aligned Multiwall Carbon Nanotubes (VACNT). Black-Right-Pointing-Pointer We have shown a correlation between gene expression and thermodynamics aspects. Black-Right-Pointing-Pointer Superhydrhophilic VACNT will be an excellent substrate for cartilage and bone tissue regeneration.

  19. Effects of an ultraviolet-visible rays translation film on growth of leaf or root vegetables

    International Nuclear Information System (INIS)

    Hamamoto, H.; Ueno, K.; Yamazaki, K.

    2008-01-01

    A new film that absorbs ultraviolet radiation (UV) and fluoresces red light was tested as a rain shelter for the cultivation of turnip (Brassica rapa L.), spinach (Spinacia oleracea L.), and Welsh onion (Allium fistulosum L.). The effect of this UV-visible ray translation film on various growth parameters (height, fresh and dry weight, leaf area and leaf sheath diameter) was compared with those under normal clear film, new UV-cut film, and used UV-cut film respectively. The transmissivity of UV was about 70% for the normal clear film, about 20% for the UV-visible ray translation film and used UV-cut film, and about 10% for the new UV-cut film. The transmissivity of photosynthetically active radiation (PAR) was about 90% for the normal clear film and the new UV-cut film, and about 80% for the used UV-cut film, while the mean transmissivity of PAR was about 80% for the UV-visible ray translation film, with about 60% transmissivity of blue radiation and over 90% of red radiation. The UV-visible ray translation film did not promote the growth of turnip roots but did significantly promote the growth of spinaches and Welsh onions compared with the normal clear film. The UV-visible ray translation film cover promoted the growth of spinaches and Welsh onions to a similar or greater extent compared to the new UV-cut film and also to a greater extent compared to the used UV-cut film

  20. Stochastic kinetics reveal imperative role of anisotropic interfacial tension to determine morphology and evolution of nucleated droplets in nematogenic films

    Science.gov (United States)

    Bhattacharjee, Amit Kumar

    2017-01-01

    For isotropic fluids, classical nucleation theory predicts the nucleation rate, barrier height and critical droplet size by ac- counting for the competition between bulk energy and interfacial tension. The nucleation process in liquid crystals is less understood. We numerically investigate nucleation in monolayered nematogenic films using a mesoscopic framework, in par- ticular, we study the morphology and kinetic pathway in spontaneous formation and growth of droplets of the stable phase in the metastable background. The parameter κ that quantifies the anisotropic elastic energy plays a central role in determining the geometric structure of the droplets. Noncircular nematic droplets with homogeneous director orientation are nucleated in a background of supercooled isotropic phase for small κ. For large κ, noncircular droplets with integer topological charge, accompanied by a biaxial ring at the outer surface, are nucleated. The isotropic droplet shape in a superheated nematic background is found to depend on κ in a similar way. Identical growth laws are found in the two cases, although an unusual two-stage mechanism is observed in the nucleation of isotropic droplets. Temporal distributions of successive events indi- cate the relevance of long-ranged elasticity-mediated interactions within the isotropic domains. Implications for a theoretical description of nucleation in anisotropic fluids are discussed.

  1. The growth, characterization, and application of highly ordered small molecule semiconducting thin films

    Science.gov (United States)

    Lunt, Richard Royal, III

    Organic semiconductors have gained tremendous attention recently as their use in field effect transistors, sensors, solar cells, lasers, and organic light emitting diodes have been demonstrated, offering the potential for low-cost alternatives. Since renewable energy remains one the greatest challenges of the 21st century, the possibility for low-cost and flexible organic photovoltaics is particularly exciting. In the first part of this thesis, we demonstrate a route to the controlled growth of oriented crystalline films through organic vapor-phase deposition (OVPD), in conjunction with organic-inorganic, and organic-organic quasi-epitaxy. This method for producing highly ordered crystalline thin-film heterostructures combines the control of film growth with the electronic properties expected to approach that of organic single crystals, making them potentially useful for high efficiency organic thin-film devices and solar cells. We further demonstrate OVPD as a method for the deposition of large-scale organic electronics with low material waste, a key ability in fulfilling the promise of low-cost organic devices. The second part of this thesis is focused on understanding factors that govern energy (i.e. exciton) transport. The two single most important and fundamental properties of organic semiconductors are the transport of charge and energy. While charge mobility has been extensively studied and convincingly linked to the degree of crystalline order and orientation, the principles governing energy transport, i.e. exciton migration, in this class of materials and the subsequent connection to crystalline properties still remain ambiguous. Therefore, we aim to understand key aspects governing exciton motion in organic materials to better engineer materials, film morphologies, and film architectures for organic electronics with improved performance. To this end, we have developed a new method for measuring exciton diffusion and characterize a range of archetypal

  2. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, R.K.; Ghosh, K.; Kahol, P.K. [Department of Physics, Astronomy and Materials Science, Missouri State University, Springfield, MO 65897 (United States); Yoon, J. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States); Guha, S. [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211 (United States)], E-mail: guhas@missouri.edu

    2008-08-30

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the {beta} phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

  3. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    International Nuclear Information System (INIS)

    Gupta, R.K.; Ghosh, K.; Kahol, P.K.; Yoon, J.; Guha, S.

    2008-01-01

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films

  4. Pulsed laser thin film growth of di-octyl substituted polyfluorene and its co-polymers

    Science.gov (United States)

    Gupta, R. K.; Ghosh, K.; Kahol, P. K.; Yoon, J.; Guha, S.

    2008-08-01

    Matrix-assisted pulsed laser deposition (PLD) allows a controlled layer-by-layer growth of polymer films. Di-octyl substituted polyfluorene (PF8) and its copolymers were deposited as thin films using matrix-assisted PLD by employing a KrF excimer laser with a fluence of 125 mJ/pulses. The optical and structural properties of these films are compared with spincoated films via Raman spectroscopy, absorption and photoluminescence. The Raman spectra of both PLD and spincoated films are similar indicating that the polymer films deposited via PLD maintain their molecular structure. Both the spincoated and the PLD grown PF8 films that were cast from toluene show the presence of the β phase. Benzothiadiazole substituted PF8 (F8BT) and butyl phenyl-substituted PF8 (PFB) PLD grown films show a slightly broader emission compared to the spincoated films, which is attributed to an enhanced intermolecular interaction in the PLD grown thin films.

  5. Influence of nitrogen and phosphorous on the growth and root morphology of Acer mono.

    Science.gov (United States)

    Razaq, Muhammad; Zhang, Peng; Shen, Hai-Long; Salahuddin

    2017-01-01

    Nitrogen and phosphorous are critical determinants of plant growth and productivity, and both plant growth and root morphology are important parameters for evaluating the effects of supplied nutrients. Previous work has shown that the growth of Acer mono seedlings is retarded under nursery conditions; we applied different levels of N (0, 5, 10, and 15 g plant-1) and P (0, 4, 6 and 8 g plant-1) fertilizer to investigate the effects of fertilization on the growth and root morphology of four-year-old seedlings in the field. Our results indicated that both N and P application significantly affected plant height, root collar diameter, chlorophyll content, and root morphology. Among the nutrient levels, 10 g N and 8 g P were found to yield maximum growth, and the maximum values of plant height, root collar diameter, chlorophyll content, and root morphology were obtained when 10 g N and 8 g P were used together. Therefore, the present study demonstrates that optimum levels of N and P can be used to improve seedling health and growth during the nursery period.

  6. On the morphological instability of a bubble during inertia-controlled growth

    Science.gov (United States)

    Martyushev, L. M.; Birzina, A. I.; Soboleva, A. S.

    2018-06-01

    The morphological stability of a spherical bubble growing under inertia control is analyzed. Based on the comparison of entropy productions for a distorted and undistorted surface and using the maximum entropy production principle, the morphological instability of the bubble under arbitrary amplitude distortions is shown. This result allows explaining a number of experiments where the surface roughness of bubbles was observed during their explosive-type growth.

  7. Effects of Crystal Morphology on Singlet Exciton Fission in Diketopyrrolopyrrole Thin Films.

    Science.gov (United States)

    Hartnett, Patrick E; Margulies, Eric A; Mauck, Catherine M; Miller, Stephen A; Wu, Yilei; Wu, Yi-Lin; Marks, Tobin J; Wasielewski, Michael R

    2016-02-25

    Singlet exciton fission (SF) is a promising strategy for increasing photovoltaic efficiency, but in order for SF to be useful in solar cells, it should take place in a chromophore that is air-stable, highly absorptive, solution processable, and inexpensive. Unlike many SF chromophores, diketopyrrolopyrrole (DPP) conforms to these criteria, and here we investigate SF in DPP for the first time. SF yields in thin films of DPP derivatives, which are widely used in organic electronics and photovoltaics, are shown to depend critically on crystal morphology. Time-resolved spectroscopy of three DPP derivatives with phenyl (3,6-diphenylpyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione, PhDPP), thienyl (3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione, TDPP), and phenylthienyl (3,6-di(5-phenylthiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione, PhTDPP) aromatic substituents in 100-200 nm thin films reveals that efficient SF occurs only in TDPP and PhTDPP (τSF = 220 ± 20 ps), despite the fact that SF is most exoergic in PhDPP. This result correlates well with the greater degree of π-overlap and closer π-stacking in TDPP (3.50 Å) and PhTDPP (3.59 Å) relative to PhDPP (3.90 Å) and demonstrates that SF in DPP is highly sensitive to the electronic coupling between adjacent chromophores. The triplet yield in PhTDPP films is determined to be 210 ± 35% by the singlet depletion method and 165 ± 30% by the energy transfer method, showing that SF is nearly quantitative in these films and that DPP derivatives are a promising class of SF chromophores for enhancing photovoltaic performance.

  8. Optical Properties and Surface Morphology of Nano-composite PMMA: TiO2 Thin Films

    International Nuclear Information System (INIS)

    Lyly Nyl Ismail; Ahmad Fairoz Aziz; Habibah Zulkefle

    2011-01-01

    There are two nano-composite PMMA: TiO 2 solutions were prepared in this research. First solution is nano-composite PMMA commercially available TiO 2 nanopowder and the second solution is nano-composite PMMA with self-prepared TiO 2 powder. The self-prepared TiO 2 powder is obtained by preparing the TiO 2 sol-gel. Solvo thermal method were used to dry the TiO 2 sol-gel and obtained TiO 2 crystal. Ball millers were used to grind the TiO 2 crystal in order to obtained nano sized powder. Triton-X was used as surfactant to stabilizer the composite between PMMA: TiO 2 . Besides comparing the nano-composite solution, we also studied the effect of the thin films thickness on the optical properties and surface morphology of the thin films. The thin films were deposited by sol-gel spin coating method on glass substrates. The optical properties and surface characterization were measured with UV-VIS spectrometer equipment and atomic force microscopy (AFM). The result showed that nano-composite PMMA with self prepared TiO 2 give high optical transparency than nano-composite PMMA with commercially available TiO 2 nano powder. The results also indicate as the thickness is increased the optical transparency are decreased. Both AFM images showed that the agglomerations of TiO 2 particles are occurred on the thin films and the surface roughness is increased when the thickness is increased. High agglomeration particles exist in the AFM images for nano-composite PMMA: TiO 2 with TiO 2 nano powder compare to the other nano-composite solution. (author)

  9. Growth mechanics of bacterial cell wall and morphology of bacteria

    Science.gov (United States)

    Jiang, Hongyuan; Sun, Sean

    2010-03-01

    The peptidoglycan cell wall of bacteria is responsible for maintaining the cell shape and integrity. During the bacterial life cycle, the growth of the cell wall is affected by mechanical stress and osmotic pressure internal to the cell. We develop a theory to describe cell shape changes under the influence of mechanical forces. We find that the theory predicts a steady state size and shape for bacterial cells ranging from cocci to spirillum. Moreover, the theory suggest a mechanism by which bacterial cytoskeletal proteins such as MreB and crescentin can maintain the shape of the cell. The theory can also explain the several recent experiments on growing bacteria in micro-environments.

  10. Morphological and structural characterizations of dendrimer-mediated metallic Ti and Al thin film nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Curry, M. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Li, X. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Metallurgical and Materials Science and Engineering, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Zhang, J. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Weaver, M.L. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Department of Metallurgical and Materials Science and Engineering, University of Alabama, Tuscaloosa, AL 35487-0209 (United States); Street, S.C. [Center for Materials for Information Technology, University of Alabama, Tuscaloosa, AL 35487-0209 (United States) and Department of Chemistry, University of Alabama, Tuscaloosa, AL 35487-0209 (United States)]. E-mail: sstreet@bama.ua.edu

    2007-02-26

    Evidence is presented here for significant influence on the surface topography of Ti and Al films in the presence of poly(amidoamine) dendrimer monolayers [generations G(4-8)] on SiO {sub x}. X-ray photoelectron spectroscopy analysis clearly indicates formation of nitrides and carbides for Ti metal grown on dendrimer monolayers. In addition, obvious trends in measured correlation lengths and crystalline growth modes of Ti films indicate grain sizes tracking the intrinsic roughness of dendrimer monolayers. No formation of metal nitride is observed for Al depositions. Atomic force microscopy analyses show significant changes in rms vertical roughness and aggregation of as-deposited Ti or Al in presence of dendrimer monolayers.

  11. Structural and morphological changes in pseudobarrier films of anodic aluminum oxide caused by irradiation with high-energy particles

    International Nuclear Information System (INIS)

    Chernykh, M.A.; Belov, V.T.

    1988-01-01

    We have studied the structural and morphological changes, occurring under the electron beam in pseudobarrier films of anodic aluminum oxide, prepared in seven different solutions and irradiated beforehand by protons of x-rays, with the aim of elucidating the structure of anodic aluminum oxides. An increased stability of the pseudobarrier films of anodic aluminum oxide has been observed towards the action of the electron beam of an UEMV-100K microscope at standard working regimes (75 keV) as a result of irradiation with protons or x-rays. A difference has been found to exist between structural and morphological changes of anodic aluminum oxide films, prepared in different solutions, when irradiated with high-energy particles. A structural and phase inhomogeneity of amorphous pseudobarrier films of anodic aluminum oxide has been detected and its influence on the character of solid-phase transformations under the maximum-intensity electron beam

  12. Influence of morphology and topography on potentiometric response of magnesium and calcium sensitive PEDOT films doped with adenosine triphosphate (ATP)

    International Nuclear Information System (INIS)

    Paczosa-Bator, B.; Peltonen, J.; Bobacka, J.; Lewenstam, A.

    2006-01-01

    Poly(3,4-ethylenedioxythiophene) (PEDOT) films doped with adenosine triphosphate (ATP) are used to study the biologically relevant competitive magnesium and calcium ion-exchange at ATP membrane sites. It is shown, by atomic force microscopy (AFM) and scanning electron microscopy (SEM), that the surface topography and morphology of the PEDOT-ATP films determines the quality of their potentiometric response. More smooth and less rough films result in better potentiometric characteristics, particularly in a faster response. The topography/morphology of the PEDOT-ATP films is influenced by conditions during electrodeposition (electrochemical method of deposition, pH, concentration of electrolytes) and post-deposition soaking (including net-time of soaking), as evidenced by X-ray photoelectron spectroscopy (XPS) and energy dispersive analysis of X-rays (EDAX)

  13. Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

    Science.gov (United States)

    Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

    2018-04-01

    In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

  14. The effects of ultraviolet radiation on the growth and gross morphology of Zea mays, Linn. seedlings

    Energy Technology Data Exchange (ETDEWEB)

    Martin, Ann Kristine Joy T.; Mendiola, Carlo Paulo T

    2000-03-01

    The study was conducted with a descriptive experimental design in order to determine the effects of broad spectrum ultraviolet radiation on growth factors, seedling height, root length, chlorophyll content, organic weights, and percentage survival, as well as gross morphological factors, leaf, stem, and root appearance, of native sweet corn seedlings. The study was limited to the seedling stage of the plant and observations were taken after 20 days of treatment. The results gathered show that there was a visible manifestation of the detrimental effects of UV on the irradiated seedlings. There were observed decreases in the growth parameters while the gross morphological parameters exhibited signs of wilting and stress. It was therefore concluded that based on the observed results, UV had a detrimental effect on the studied growth and gross morphological parameters. (Author)

  15. Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method

    Science.gov (United States)

    Amin, N. Mohd; Ng, S. S.

    2018-01-01

    Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.

  16. Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates

    International Nuclear Information System (INIS)

    Yin Xuesong; Tang Wu; Weng Xiaolong; Deng Longjiang

    2009-01-01

    Amorphous or weakly crystalline indium tin oxide (ITO) thin film samples have been prepared on polymethylmethacrylate and polyethylene terephthalate substrates by RF-magnetron sputtering at a low substrate temperature. The surface morphological and electrical properties of the ITO layers were measured by atomic force microscopy (AFM) and a standard four-point probe measurement. The effect of surface morphology on the resistivity of ITO thin films was studied, which presented some different variations from crystalline films. Then, a simplified film system model, including the substrate, continuous ITO layer and ITO surface grain, was proposed to deal with these correlations. Based on this thin film model and the AFM images, a quadratic potential was introduced to simulate the characteristics of the ITO surface morphology, and the classical Kronig-Penney model, the semiconductor electrical theory and the modified Neugebauer-Webb model were used to expound the detailed experimental results. The modelling equation was highly in accord with the experimental variations of the resistivity on the characteristics of the surface morphology.

  17. Influence of current density on surface morphology and properties of pulse plated tin films from citrate electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Ashutosh; Bhattacharya, Sumit; Das, Siddhartha; Das, Karabi, E-mail: karabi@metal.iitkgp.ernet.in

    2014-01-30

    Bulk polycrystalline tin films have been processed by pulse electrodeposition technique from a simple solution containing triammonium citrate and stannous chloride. The cathodic investigations have been carried out by galvanostatic methods. As deposited samples are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). XRD analysis of the deposited films shows microcrystalline grains having β-Sn form. The surface morphology is very rough at lower current density, but becomes smooth at higher current density, and exhibits pyramid type morphology at all the current densities. The effect of current density on microhardness, melting behavior, and electrical resistivity are also reported here.

  18. Cell adhesion and growth on ultrananocrystalline diamond and diamond-like carbon films after different surface modifications

    Energy Technology Data Exchange (ETDEWEB)

    Miksovsky, J. [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany); Institute of Physics ASCR, Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Voss, A. [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany); Kozarova, R. [Institute of Molecular Biology, Bulgarian Academy of Sciences, Sofia (Bulgaria); Kocourek, T.; Pisarik, P. [Institute of Physics ASCR, Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Ceccone, G. [Unit Nanobiosciences, European Commission Joint Research Centre, Ispra (Italy); Kulisch, W. [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany); Jelinek, M. [Institute of Physics ASCR, Prague (Czech Republic); Czech Technical University in Prague, Faculty of Biomedical Engineering, Kladno (Czech Republic); Apostolova, M.D. [Institute of Molecular Biology, Bulgarian Academy of Sciences, Sofia (Bulgaria); Reithmaier, J.P. [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany); Popov, C., E-mail: popov@ina.uni-kassel.de [Institute of Nanostructure Technologies and Analytics, Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel (Germany)

    2014-04-01

    Graphical abstract: - Highlights: • UNCD and DLC films were modified by UV/O{sub 3} treatments, O{sub 2} or NH{sub 3}-containing plasmas. • Surface composition, wettability and surface energy change upon modifications. • Higher efficiency of UNCD modifications was observed. • Cell attachment and growth were influenced by the surface termination and roughness. - Abstract: Diamond and diamond-like carbon (DLC) films possess a set of excellent physical and chemical properties which together with a high biocompatibility make them attractive candidates for a number of medical and biotechnological applications. In the current work thin ultrananocrystalline diamond (UNCD) and DLC films were comparatively investigated with respect to cell attachment and proliferation after different surface modifications. The UNCD films were prepared by microwave plasma enhanced chemical vapor deposition, the DLC films by pulsed laser deposition (PLD). The films were comprehensively characterized with respect to their basic properties, e.g. crystallinity, morphology, chemical bonding nature, etc. Afterwards the UNCD and DLC films were modified applying O{sub 2} or NH{sub 3}/N{sub 2} plasmas and UV/O{sub 3} treatments to alter their surface termination. The surface composition of as-grown and modified samples was studied by X-ray photoelectron spectroscopy (XPS). Furthermore the films were characterized by contact angle measurements with water, formamide, 1-decanol and diiodomethane; from the results obtained the surface energy with its dispersive and polar components was calculated. The adhesion and proliferation of MG63 osteosarcoma cells on the different UNCD and DLC samples were assessed by measurement of the cell attachment efficiency and MTT assays. The determined cell densities were compared and correlated with the surface properties of as-deposited and modified UNCD and DLC films.

  19. Morphologies and wetting properties of copper film with 3D porous micro-nano hierarchical structure prepared by electrochemical deposition

    International Nuclear Information System (INIS)

    Wang, Hongbin; Wang, Ning; Hang, Tao; Li, Ming

    2016-01-01

    Highlights: • A 3D porous micro-nano hierarchical structure Cu films were prepared. • The evolution of morphology and wettability with deposition time was reported. • The effects of EDA on the microscopic morphology were revealed. • A high contact angle of 162.1° was measured when deposition time is 5 s. • The mechanism of super-hydrophobicity was illustrated by two classical models. - Abstract: Three-dimensional porous micro-nano hierarchical structure Cu films were prepared by electrochemical deposition with the Hydrogen bubble dynamic template. The morphologies of the deposited films characterized by Scanning Electronic Microscopy (SEM) exhibit a porous micro-nano hierarchical structure, which consists of three levels in different size scales, namely the honeycomb-like microstructure, the dendritic substructure and the nano particles. Besides, the factors which influenced the microscopic morphology were studied, including the deposition time and the additive Ethylene diamine. By measuring the water contact angle, the porous copper films were found to be super-hydrophobic. The maximum of the contact angles could reach as high as 162.1°. An empirical correlation between morphologies and wetting properties was revealed for the first time. The pore diameter increased simultaneously with the deposition time while the contact angle decreased. The mechanism was illustrated by two classical models. Such super-hydrophobic three-dimensional hierarchical micro-nano structure is expected to have practical application in industry.

  20. Nucleation and growth microstructural study of ti films on 304 SS substrates

    Directory of Open Access Journals (Sweden)

    Rogério de Almeida Vieira

    2004-09-01

    Full Text Available Coating of steel surfaces with titanium films has been studied with the objective to protect them against corrosion, and to create an intermediate film for CVD diamond and TiN film deposition. In this work, the nucleation, growth mechanisms and microstructural formation of the titanium films deposited on 304 stainless steel (304 SS substrate are presented and discussed. The titanium films of variable thickness were obtained by vapour phase deposition produced by electron beam. The surfaces of these samples were observed by scanning electron microscopy. The cross sections of these samples were observed by using an atomic force microscope. The Ti film-304 SS interfaces were analyzed by X-ray diffraction. The results showed that titanium films have a columnar growth. The Ti film-304 SS interface had a residual compression stress at room temperature due to the inter-diffusion process.

  1. Structural, morphological and optical properties of spray deposited Mn-doped CeO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G., E-mail: jp@ece.sastra.edu

    2014-07-25

    Highlights: • Spray deposited undoped and Mn-doped CeO{sub 2} thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO{sub 2} thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO{sub 2} films were studied. It was found that both the undoped and doped CeO{sub 2} films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO{sub 2} film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported.

  2. Structural, morphological and optical properties of spray deposited Mn-doped CeO2 thin films

    International Nuclear Information System (INIS)

    Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G.

    2014-01-01

    Highlights: • Spray deposited undoped and Mn-doped CeO 2 thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO 2 thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO 2 films were studied. It was found that both the undoped and doped CeO 2 films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO 2 film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported

  3. Optical and morphological characterization by atomic force microscopy of luminescent 2-styrylpyridine derivative compounds with Poly(N-vinylcarbazole) films

    International Nuclear Information System (INIS)

    Perez-Gutierrez, E.; Percino, M.J.; Chapela, V.M.; Maldonado, J.L.

    2011-01-01

    The present work addresses the optical and morphological properties of organic films based on low molecular weight dyes styrylpyridine derivatives 2-styrylpyridine (A), 4-chlorophenyl-2-vinylpyridine (B) and 4-fluorophenyl-2-vinylpyridine (C), embedded in a polymeric matrix poly(N-vinylcarbazole) (PVK). The films were prepared by a spin-coating technique from solutions with dye:PVK ratios of 0.25:1, 0.5:1 and 1:1. Solvents were chloroform and toluene. The molar absorption coefficient (ε) spectra for a dye:PVK mixture in solution were a combination of the absorptions of both components separately, but for the deposited films, the shape of the spectrum showed that the poly(N-vinylcarbazole) absorption dominated. However, when the same films were dissolved again in CHCl 3 , their spectra showed an absorption shape similar to that of the solution mixture before the deposition. Solution viscosity measurements were carried out with an Ubbelohde glass capillary viscometer to corroborate the results that showed a better mixture of the dye with the host in chloroform. The morphology of the prepared films was analyzed by atomic force microscopy and exhibited a solvent effect, with a pinhole-free, smooth surface when toluene was used and a wavy surface with chloroform. The ratio dye:matrix was the principal parameter for obtaining optical quality films; for 0.25:1 and 0.5:1 ratios, the films were of good quality, but for 1:1, the dye was expelled from the PVK and a crystallization was present over the surface of the films. Film thickness was also measured and films deposited from toluene solutions gave an average thickness of 54 nm while films from chloroform solutions had an average thickness greater than 160 nm that increased depending on chromophore concentration.

  4. Optical and morphological characterization by atomic force microscopy of luminescent 2-styrylpyridine derivative compounds with Poly(N-vinylcarbazole) films

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Gutierrez, E., E-mail: cuper_enrique@msn.com [Centro de Quimica, Instituto de Ciencias, Universidad Autonoma de Puebla, Complejo de Ciencias, ICUAP, Edif. 103-F, 22 Sur y San Claudio, C.P. 72570 Puebla, Puebla (Mexico); Percino, M.J.; Chapela, V.M. [Centro de Quimica, Instituto de Ciencias, Universidad Autonoma de Puebla, Complejo de Ciencias, ICUAP, Edif. 103-F, 22 Sur y San Claudio, C.P. 72570 Puebla, Puebla (Mexico); Maldonado, J.L. [Centro de Investigaciones en Optica A.C. (CIO), Lomas del Bosque 115, Col. Lomas del Campestre, C.P. 37150, Leon Guanajuato (Mexico)

    2011-07-01

    The present work addresses the optical and morphological properties of organic films based on low molecular weight dyes styrylpyridine derivatives 2-styrylpyridine (A), 4-chlorophenyl-2-vinylpyridine (B) and 4-fluorophenyl-2-vinylpyridine (C), embedded in a polymeric matrix poly(N-vinylcarbazole) (PVK). The films were prepared by a spin-coating technique from solutions with dye:PVK ratios of 0.25:1, 0.5:1 and 1:1. Solvents were chloroform and toluene. The molar absorption coefficient ({epsilon}) spectra for a dye:PVK mixture in solution were a combination of the absorptions of both components separately, but for the deposited films, the shape of the spectrum showed that the poly(N-vinylcarbazole) absorption dominated. However, when the same films were dissolved again in CHCl{sub 3}, their spectra showed an absorption shape similar to that of the solution mixture before the deposition. Solution viscosity measurements were carried out with an Ubbelohde glass capillary viscometer to corroborate the results that showed a better mixture of the dye with the host in chloroform. The morphology of the prepared films was analyzed by atomic force microscopy and exhibited a solvent effect, with a pinhole-free, smooth surface when toluene was used and a wavy surface with chloroform. The ratio dye:matrix was the principal parameter for obtaining optical quality films; for 0.25:1 and 0.5:1 ratios, the films were of good quality, but for 1:1, the dye was expelled from the PVK and a crystallization was present over the surface of the films. Film thickness was also measured and films deposited from toluene solutions gave an average thickness of 54 nm while films from chloroform solutions had an average thickness greater than 160 nm that increased depending on chromophore concentration.

  5. Computer graphic investigation on the epitaxial growth of superconductor films

    International Nuclear Information System (INIS)

    Miyamoto, A.; Iwamoto, S.; Inui, T.; Agusa, K.

    1989-01-01

    A mechanism of the epitaxial growth the oxide superconductor films has been investigated by using the computer graphics for the combination of orthorhombic Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 MgO, and ZrO 2 . The (001) plane Ba 2 YCu 3 O 7-x with substrate crystals such as SrTiO 3 , MgO, and ZrO 2 . The (001) plane of Ba 2 YCu 3 O 7-x has been shown to fit the (100) plane of SrTiO 3 , MgO, and ZrO 2 . A crystallographic fit has also been proved between the (110) plane of Ba 2 YCu 3 O 7-x and the (110) plane of SrTiO 3 . These results are consistent with the experimental data about the epitaxial growth of the Ba 2 YCu 3 O 7-x films. Furthermore, detailed investigation of atomic arrangements has indicated some differences in the ionic interaction at the superconductor-substrate interface among SrTiO 3 , MgO, and ZrO 2 substrates. As for ZrO 2 (100) plane, for examples, ionic arrangements at the oxide layer is favorable only for the interaction with Y 3+ layer of Ba 2 YCu 3 O 7-x , while the Zr-O layer of ZrO 2 can interact with both Ba-O layer and Cu-O layer of Ba 2 YCu 3 O 7-x

  6. Atomistic growth phenomena of reactively sputtered RuO2 and MnO2 thin films

    International Nuclear Information System (INIS)

    Music, Denis; Bliem, Pascal; Geyer, Richard W.; Schneider, Jochen M.

    2015-01-01

    We have synthesized RuO 2 and MnO 2 thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO 2 nanorods and faceted, nanocrystalline MnO 2 , are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O 2 molecules are preferentially adsorbed at their respective RuO 2 ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO 2 surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO 2 . Due to this atomic scale decomposition, MnO 2 may have to be renucleated during growth, which is consistent with experiments

  7. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

  8. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  9. Growth, morphology, spectral and thermal studies of gel grown diclofenac acid crystals

    Science.gov (United States)

    Ramachandran, E.; Ramukutty, S.

    2014-03-01

    The crystal growth of diclofenac acid in silica gel is the first to be reported in literature. The growth parameters were varied to optimize the suitable growth condition. Single crystal X-ray diffraction method was used for the conformation of the crystal structure. Morphology studies showed that the growth is prominent along the b-axis and the prominent face is {002}. Fourier transform infrared spectral study was performed to identify the functional groups present in the crystal. Thermal stability and decomposition of the material were analyzed using thermo calorimetry in the temperature range 30-500 °C.

  10. Morphology and growing of nanometric multilayered films formed by alternated layers of poly(3,4-ethylenedioxythiophene) and poly(N-methylpyrrole)

    Energy Technology Data Exchange (ETDEWEB)

    Aradilla, David [Departament d' Enginyeria Quimica, E. T. S. d' Enginyers Industrials, Universitat Politecnica de Catalunya, Diagonal 647, 08028 Barcelona (Spain); Center for Research in Nano-Engineering, Universitat Politecnica de Catalunya, Campus Sud, Edifici C' , C/Pasqual i Vila s/n, Barcelona E-08028 (Spain); Estrany, Francesc, E-mail: francesc.estrany@upc.ed [Center for Research in Nano-Engineering, Universitat Politecnica de Catalunya, Campus Sud, Edifici C' , C/Pasqual i Vila s/n, Barcelona E-08028 (Spain); Unitat de Quimica Industrial, Escola Universitaria d' Enginyeria Tecnica Industrial de Barcelona, Universitat Politecnica de Catalunya, Comte d' Urgell 187, 08036 Barcelona (Spain); Armelin, Elaine [Departament d' Enginyeria Quimica, E. T. S. d' Enginyers Industrials, Universitat Politecnica de Catalunya, Diagonal 647, 08028 Barcelona (Spain); Center for Research in Nano-Engineering, Universitat Politecnica de Catalunya, Campus Sud, Edifici C' , C/Pasqual i Vila s/n, Barcelona E-08028 (Spain); Aleman, Carlos, E-mail: carlos.aleman@upc.ed [Departament d' Enginyeria Quimica, E. T. S. d' Enginyers Industrials, Universitat Politecnica de Catalunya, Diagonal 647, 08028 Barcelona (Spain); Center for Research in Nano-Engineering, Universitat Politecnica de Catalunya, Campus Sud, Edifici C' , C/Pasqual i Vila s/n, Barcelona E-08028 (Spain)

    2010-05-31

    Multilayered nanometric films formed by alternated layers of conducting poly(3,4-ethylenedioxythiophene) and poly(N-methylpyrrole) doped with perchlorate anions (ml-PEDOT/PNMPy) have been prepared using a layer-by-layer electrodeposition technique combined with a very small polymerization time. The mechanisms of formation and growth of the resulting multilayered systems have been investigated using Atomic Force Microscopy (AFM), and compared with those obtained for the corresponding homopolymers, which were prepared using identical experimental conditions. Furthermore, the local conductivity, electroactivity and electrostability have been also examined. Analyses of the morphology, topography and roughness of the surfaces indicate that the formation and growth of the multilayered films strongly depend on the number of layers as well as on the chemical nature of the conducting polymer. Interestingly, AFM reflects that the formation and growth of the ml-PEDOT/PNMPy films are significantly different from those of PEDOT and PNMPy homopolymers. The electrical and electrochemical properties of the systems under study are fully consistent with the proposed mechanisms. Results evidenced that multilayered systems formed by two conducting polymers are more advantageous from a technological point of view than the corresponding copolymers.

  11. Morphology and growing of nanometric multilayered films formed by alternated layers of poly(3,4-ethylenedioxythiophene) and poly(N-methylpyrrole)

    International Nuclear Information System (INIS)

    Aradilla, David; Estrany, Francesc; Armelin, Elaine; Aleman, Carlos

    2010-01-01

    Multilayered nanometric films formed by alternated layers of conducting poly(3,4-ethylenedioxythiophene) and poly(N-methylpyrrole) doped with perchlorate anions (ml-PEDOT/PNMPy) have been prepared using a layer-by-layer electrodeposition technique combined with a very small polymerization time. The mechanisms of formation and growth of the resulting multilayered systems have been investigated using Atomic Force Microscopy (AFM), and compared with those obtained for the corresponding homopolymers, which were prepared using identical experimental conditions. Furthermore, the local conductivity, electroactivity and electrostability have been also examined. Analyses of the morphology, topography and roughness of the surfaces indicate that the formation and growth of the multilayered films strongly depend on the number of layers as well as on the chemical nature of the conducting polymer. Interestingly, AFM reflects that the formation and growth of the ml-PEDOT/PNMPy films are significantly different from those of PEDOT and PNMPy homopolymers. The electrical and electrochemical properties of the systems under study are fully consistent with the proposed mechanisms. Results evidenced that multilayered systems formed by two conducting polymers are more advantageous from a technological point of view than the corresponding copolymers.

  12. One-step synthesis of bird cage-like ZnO and other controlled morphologies: Structural, growth mechanism and photocatalytic properties

    International Nuclear Information System (INIS)

    Yang, Shuo; Wang, Jian; Li, Xiuyan; Zhai, Hongju; Han, Donglai; Wei, Bing; Wang, Dandan; Yang, Jinghai

    2014-01-01

    Highlights: • ZnO nanocage arrays were synthesized by a one-step etching route. • ZnO nanocage exhibit higher photocatalytic activity than other samples. • The different photocatalytic activities of different samples were analyzed. • The formation mechanism of ZnO nanocages was proposed. - Abstract: ZnO nanocages and other nanostructures have been synthesized via a simple one-pot hydrothermal method with different reaction times. It is worth mentioning that this is a completely green method which does not require any other chemicals except that Zn foil served as Zn source in the experiment. X-ray diffraction (XRD), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), photoluminescence (PL) and UV–Vis diffuse reflection spectra were used to characterize the crystallinity, morphology and optical property of ZnO structures. Growth mechanisms of ZnO were proposed based on these results. Furthermore, ZnO films with different morphologies and crystal growth habits exhibited different activities to rhodamine B degradation. The influence of the reaction time on the morphology of ZnO films and the effect of the morphologies on the photocatalytic activity are discussed

  13. Growth and magnetic structure of La{sub 0.67}Sr{sub 0.33}MnO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Brown, G.W.; Jia, Q.X.; Peterson, E.J.; Hristova, D.K.; Hundley, M.F.; Thompson, J.D.; Maggiore, C.J.; Tesmer, J.; Hawley, M.E.

    1997-08-01

    Growth of LaMnO{sub 3} films that exhibit colossal magnetoresistance (CMR) has concentrated heavily on Ca doped materials. However, since the 33% Sr doped films are ferromagnetic at room temperature, they are ideal candidates for dual growth-magnetic structure studies using scanned probe techniques. In this study, interest was focused on the relations between growth/processing parameters, film morphology, and electronic/magnetic properties. In addition, films were grown on both LaAlO{sub 3} (LAO) and SrTiO{sub 3} (STO) to examine the results of stress induced by different substrate mismatches. La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) was grown using pulsed laser deposition (PLD) at temperatures between 500 C and 800 C. The film microstructure, crystallinity, and magnetic and electrical properties were characterized by room temperature scanning tunneling microscopy (STM), atomic force microscopy (AFM), magnetic force microscopy (MFM), x-ray diffraction, and temperature dependent transport and magnetization measurements. The growth trends follow those previously reported for Ca doped films. Grains increase in size with increasing temperature and coalesce into extended layers after annealing. Although topographic contributions complicate interpretation of some MFM data, local magnetic structure observed here is generally associated with film defects.

  14. Annealing induced morphological modifications in PTFE films deposited by magnetron sputtering

    Science.gov (United States)

    Tripathi, S.; De, Rajnarayan; Rao, K. Divakar; Haque, S. Maidul; Misal, J. S.; Prathap, C.; Das, S. C.; Ganesan, V.; Sahoo, N. K.

    2017-05-01

    As grown RF magnetron sputtered polytetrafluoroethylene (PTFE) thin films were subjected to vacuum annealing at optimized elevated temperature of 200° C for varying time duration and corresponding surface morphological changes were recorded. The columnar structures appearing after an annealing duration of 2 hours are interesting for fabrication of rough PTFE surfaces towards possible applications in hydrophobicity along with high transmission. Supported by transmission data, the AFM images show a transformation of smooth PTFE surface with less than 2 nm rms roughness to a very rough surface. The results are interpreted in terms of thermal energy induced modifications only at the surface without any change in the original bonding structure on the surface and inside the sample. Preliminary studies indicate that the optimization of roughness and transmission together on such surfaces may lead to high water contact angles.

  15. Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

    Science.gov (United States)

    Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

    2017-11-01

    Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

    International Nuclear Information System (INIS)

    Miller, K.T.

    1991-01-01

    Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

  17. Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology

    International Nuclear Information System (INIS)

    Sugiyama, Masakazu; Iino, Tomohisa; Nakajima, Tohru; Tanaka, Takeshi; Egashira, Yasuyuki; Yamashita, Kohichi; Komiyama, Hiroshi; Shimogaki, Yukihiro

    2006-01-01

    We propose a method to reduce the surface roughness of Al film in the chemical vapor deposition (CVD) using dimethyl-aluminum-hydride (DMAH) as the precursor. An elementary reaction simulation was executed not only to predict the deposition rate but also to predict the coverage of the film by surface adsorbates. It was assumed that high surface coverage is essential in order to deposit smooth films because the adsorbates protect the surface from oxidation which causes discontinuous growth of crystal grains. According to this principle, the condition, that realizes both high surface coverage and high deposition rate at the same time by using the elementary reaction simulation, was sought. A nozzle inlet was used instead of a conventional showerhead. This drastically improved the surface morphology, showing the effectiveness of this theoretical optimization procedure

  18. Optical and Morphological Properties of Electron-Beam Irradiated High-Density Thin Poly Ethylene Films

    International Nuclear Information System (INIS)

    Abdel-Hamid, H. M.; Fawzy, Y.H.A.; El-Sayed, S.M.

    2005-01-01

    Effects of surface morphology alterations on the optical properties of the high-density polyethylene (HDPE) films irradiated by 1.5 MeV electron beam has been investigated. The irradiation doses were conducted at the values: 30, 135, 295 and 540 kGy, respectively. The changes induced in HDPE involved: the creation of free radicals, the formation of chemical bonds i.e., intermolecular crosslinking and irreversible cleavage of bonds in the main chain, which resulted in the fragmentation of the molecules. An Ultraviolet-Visible Spectrophotometer (UV-VIS) and Scanning Electron Microscope (SEM) were used to characterize the changes. Because the crosslinking (induced by electron irradiation) limits the movability of the HDPE molecular chains, the optical energy gap was then subjected to a change. It decreased from 4.41 to 3.22 eV with an increasing electron dose up to 540 kGy. At a higher dose of irradiation (540 kGy), degradation of HDPE rather than crosslinking was raised. The irradiated HDPE films indicated that the crosslinking and degradation are likely to have an effect on their surface morphologies. The physical properties of polymeric materials can be modified by ionizing radiation in the form of gamma rays, X-rays and energetic electrons. High-energy electron beam is an especially useful tool in this regard (Cleland et al, 2003). Polymerizing, grafting, crosslinking and chain scission reactions can be initiated by irradiation. The results of such reactions can enhance the utility and value of commercial products. HDPE (CH2-CH2) has many attractive properties, such as an excellent chemical resistance, low friction and low moisture absorption

  19. Growth and structure of L1 sub 0 ordered FePt films on GaAs(001)

    CERN Document Server

    Nefedov, A; Theis-Broehl, K; Zabel, H; Doi, M; Schuster, E; Keune, W

    2002-01-01

    The structural properties of epitaxial L1 sub 0 ordered FePt(001) films, grown by molecular beam epitaxy (alternating deposition of Fe and Pt atomic layers) on buffer-Pt/seed-Fe/GaAs(001) have been studied by in situ reflection high-energy electron diffraction and by ex situ x-ray scattering as a function of the growth conditions. Reflection high-energy electron diffraction intensity oscillations measured during FePt layer growth provide evidence for island growth at T sub s = 200 deg. C and quasi layer-by-layer growth at T sub s = 350 deg. C. From small-angle and wide-angle x-ray scattering it was found that the degree of epitaxy depends critically on morphology of the seed layer and the substrate roughness. X-ray diffraction analysis showed that the long-range order parameter increases from near zero for films grown at 200 deg. C to 0.65 for films grown at 350 deg. C. This confirms the fact that the order parameter is mainly determined by the surface mobility of the atoms which is controlled experimentally ...

  20. The effect of substrate orientation on the kinetics and thermodynamics of initial oxide-film growth on metals

    Energy Technology Data Exchange (ETDEWEB)

    Reichel, Friederike

    2007-11-19

    This thesis addresses the effect of the parent metal-substrate orientation on the thermodynamics and kinetics of ultra-thin oxide-film growth on bare metals upon their exposure to oxygen gas at low temperatures (up to 650 K). A model description has been developed to predict the thermodynamically stable microstructure of a thin oxide film grown on its bare metal substrate as function of the oxidation conditions and the substrate orientation. For Mg and Ni, the critical oxide-film thickness is less than 1 oxide monolayer and therefore the initial development of an amorphous oxide phase on these metal substrates is unlikely. Finally, for Cu and densely packed Cr and Fe metal surfaces, oxide overgrowth is predicted to proceed by the direct formation and growth of a crystalline oxide phase. Further, polished Al single-crystals with {l_brace}111{r_brace}, {l_brace}100{r_brace} and {l_brace}110{r_brace} surface orientations were introduced in an ultra-high vacuum system for specimen processing and analysis. After surface cleaning and annealing, the bare Al substrates have been oxidized by exposure to pure oxygen gas. During the oxidation, the oxide-film growth kinetics has been established by real-time in-situ spectroscopic ellipsometry. After the oxidation, the oxide-film microstructures were investigated by angle-resolved X-ray photoelectron spectroscopy and low energy electron diffraction. Finally, high-resolution transmission electron microscopic analysis was applied to study the microstructure and morphology of the grown oxide films on an atomic scale. (orig.)

  1. The Impact of Morphology and Composition on the Resistivity and Oxidation Resistance of Metal Nanostructure Films

    Science.gov (United States)

    Stewart, Ian Edward

    Printed electronics, including transparent conductors, currently rely on expensive materials to generate high conductivity devices. Conductive inks for thick film applications utilizing inkjet, aerosol, and screen printing technologies are often comprised of expensive and rare silver particles. Thin film applications such as organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs) predominantly employ indium tin oxide (ITO) as the transparent conductive layer which requires expensive and wasteful vapor deposition techniques. Thus an alternative to silver and ITO with similar performance in printed electronics warrants considerable attention. Copper nanomaterials, being orders of magnitude cheaper and more abundant than silver or indium, solution-coatable, and exhibiting a bulk conductivity only 6 % less than silver, have emerged as a promising candidate for incorporation in printed electronics. First, we examine the effect of nanomaterial shape on the conductivity of thick films. The inks used in such films often require annealing at elevated temperature in order to sinter the silver nanoparticles together and obtain low resistivities. We explore the change in morphology and resistivity that occurs upon heating thick films of silver nanowires (of two different lengths, Ag NWs), nanoparticles (Ag NPs), and microflakes (Ag MFs) deposited from water at temperatures between 70 and 400 °C. At the lowest temperatures, longer Ag NWs exhibited the lowest resistivity (1.8 x 10-5 O cm), suggesting that the resistivity of thick films of silver nanostructures is dominated by the contact resistance between particles. This result supported previous research showing that junction resistance between Ag NWs in thin film conductors also dominates optoelectronic performance. Since the goal is to replace silver with copper, we perform a similar analysis by using a pseudo-2D rod network modeling approach that has been modified to include lognormal distributions in length

  2. Effect of annealing temperatures on the morphology and structural properties of PVDF/MgO nanocomposites thin films

    Science.gov (United States)

    Rozana, M. D.; Arshad, A. N.; Wahid, M. H. M.; Habibah, Z.; Sarip, M. N.; Rusop, M.

    2018-05-01

    This study investigates the effect of annealing on the topography, morphology and crystal phases of poly(vinylideneflouride)/Magnesium Oxide (MgO) nanocomposites thin films via AFM, FESEM and ATR-FTIR. The nanocomposites thin films were annealed at temperatures ranging from 70°C to 170°C. The annealed PVDF/MgO nanocomposites thin films were then cooled at room temperature before removal from the oven. This is to restructure the crystal lattice and to reduce imperfection for the PVDF/MgO nanocomposites thin films. PVDF/MgO nanocomposites thin films with annealing temperatures of 70°C, 90°C and 110°C showed uniform distribution of MgO nanoparticles, relatively low average surface roughness and no visible of defects. High application of annealing temperature on PVDF/MgO nanocomposites thin films caused tear-like defects on the thin films surface as observed by FESEM. The PVDF/MgO nanocomposites thin films annealed at 70°C was found to be a favourable film to be utilized in this study due to its enhanced β-crystalites of PVDF as evident in ATR-FTIR spectra.

  3. Polymer Brush Grafted Nanoparticles and Their Impact on the Morphology Evolution of Polymer Blend Films

    Science.gov (United States)

    Chung, Hyun-Joong; Ohno, Kohji; Composto, Russell

    2013-03-01

    We present an novel pathway to control the location of nanoparticles (NPs) in phase-separating polymer blend films containing poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN). Because hydrophobic polymer phases have a small interfacial energy, ~1 mJ/m2, subtle changes in the NP surface functionality can be used to guide NPs to either the interface between immiscible polymers or into one of the phases. Based on this idea, we designed a class of NPs grafted with PMMA brushes. These PMMA brushes were grown from the NP surface by atom transfer radical polymerization (ATRP), which results in chains terminated with chlorine atoms. The chain end can be substituted with protons (H) by dehalogenation. As a result, the NPs are strongly segregated at the interface when grafted PMMA chains are short (Mn =1.8K) and the end group is Cl, whereas NPs partition into PMMA-rich phase when chains are long (Mn =160K) and/or when chains are terminated with hydrogen. The Cl end groups and shorter chain length cause an increase in surface energy for the NPs. The increase in surface energy of short-chained NPs can be attributed to (i) an extended brush conformation (entropic) and/or (ii) a high density of ``unfavorable'' end groups (enthalpic). Finally, the impact of NPs on the morphological evolution of the polymer blend films will be discussed. Ref: H.-J.Chung et al., ACS Macro Lett. 1(1), 252-256 (2012).

  4. Ultrahigh PEMFC performance of a thin-film, dual-electrode assembly with tailored electrode morphology.

    Science.gov (United States)

    Jung, Chi-Young; Kim, Tae-Hyun; Yi, Sung-Chul

    2014-02-01

    A dual-electrode membrane electrode assembly (MEA) for proton exchange membrane fuel cells with enhanced polarization under zero relative humidity (RH) is fabricated by introducing a phase-separated morphology in an agglomerated catalyst layer of Pt/C (platinum on carbon black) and Nafion. In the catalyst layer, a sufficient level of phase separation is achieved by dispersing the Pt catalyst and the Nafion dispersion in a mixed-solvent system (propane-1,2,3-triol/1-methyl-2-pyrrolidinone).The high polymer chain mobility results in improved water uptake and regular pore-size distribution with small pore diameters. The electrochemical performance of the dual-film electrode assembly with different levels of phase separation is compared to conventional electrode assemblies. As a result, good performance at 0 % RH is obtained because self-humidification is dramatically improved by attaching this dense and phase-separated catalytic overlayer onto the conventional catalyst layer. A MEA prepared using the thin-film, dual-layered electrode exhibits 39-fold increased RH stability and 28-fold improved start-up recovery time during the on-off operation relative to the conventional device. We demonstrate the successful operation of the dual-layered electrode comprised of discriminatively phase-separated agglomerates with an ultrahigh zero RH fuel-cell performance reaching over 95 % performance of a fully humidified MEA. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Morphology, thermal, mechanical, and barrier properties of graphene oxide/poly(lactic acid) nanocomposite films

    International Nuclear Information System (INIS)

    Kim, Seong Woo; Choi, Hyun Muk

    2016-01-01

    To improve the physical and gas barrier properties of biodegradable poly(lactic acid) (PLA) film, two graphene nanosheets of highly functionalized graphene oxide (0.3 wt% to 0.7 wt%) and low-functionalized graphene oxide (0.5 wt%) were incorporated into PLA resin via solution blending method. Subsequently, we investigated the effects of material parameters such as loading level and degree of functionalization for the graphene nanosheets on the morphology and properties of the resultant nanocomposites. The highly functionalized graphene oxide (GO) caused more exfoliation and homogeneous dispersion in PLA matrix as well as more sustainable suspensions in THF, compared to low-functionalized graphene oxide (LFGO). When loaded with GO from 0.3 wt% to 0.7 wt%, the glass transition temperature, degree of crystallinity, tensile strength and modulus increased steadily. The GO gave rise to more pronounced effect in the thermal and mechanical reinforcement, relative to LFGO. In addition, the preparation of fairly transparent PLA-based nanocomposite film with noticeably improved barrier performance achieved only when incorporated with GO up to 0.7wt%. As a result, GO may be more compatible with hydrophilic PLA resin, compared to LFGO, resulting in more prominent enhancement of nanocomposites properties.

  6. Morphological Instabilities in a Growing Yeast Colony: Experiment and Theory

    DEFF Research Database (Denmark)

    Sams, Thomas; Sneppen, Kim; Jensen, Mogens

    1997-01-01

    We study the growth of colonies of the yeast Pichia membranaefaciens on agarose film. The growth conditions are controlled in a setup where nutrients are supplied through an agarose film suspended over a solution of nutrients. As the thickness of the agarose film is varied, the morphology of the ...

  7. Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

    International Nuclear Information System (INIS)

    Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A.V.

    2015-01-01

    Highlights: • DLC and CN x bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN x ) bilayer. • Al/CN x bilayer presents a higher content of Csp 3 /Csp 2 bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN x ) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN x bilayer. Al interlayer induces the increase of the size and ordering of Csp 2 clusters in the films but AlN interlayer increases the disordering degree of Csp 2 clusters. XPS results showed that a higher content of Csp 3 /Csp 2 bonds presents in the Al/CN x bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN x ) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN x bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application

  8. Modelling of epitaxial film growth with an Ehrlich-Schwoebel barrier dependent on the step height

    International Nuclear Information System (INIS)

    Leal, F F; Ferreira, S C; Ferreira, S O

    2011-01-01

    The formation of mounded surfaces in epitaxial growth is attributed to the presence of barriers against interlayer diffusion in the terrace edges, known as Ehrlich-Schwoebel (ES) barriers. We investigate a model for epitaxial growth using an ES barrier explicitly dependent on the step height. Our model has an intrinsic topological step barrier even in the absence of an explicit ES barrier. We show that mounded morphologies can be obtained even for a small barrier while a self-affine growth, consistent with the Villain-Lai-Das Sarma equation, is observed in the absence of an explicit step barrier. The mounded surfaces are described by a super-roughness dynamical scaling characterized by locally smooth (facetted) surfaces and a global roughness exponent α > 1. The thin film limit is featured by surfaces with self-assembled three-dimensional structures having an aspect ratio (height/width) that may increase or decrease with temperature depending on the strength of the step barrier. (fast track communication)

  9. The influence of polysilane chemical structure on optical properties, rubbed film morphology and LC alignment

    Directory of Open Access Journals (Sweden)

    M. Soroceanu

    2015-05-01

    Full Text Available Polysilane films were prepared by the drop casting method and their optical and morphological properties have been analyzed in order to investigate their suitability as alignment layers for nematic molecules. The samples do not absorb the radiations in the visible domain, particularly those containing methylhydrosilyl units, and present a transmittance of about 90% starting from 390 to 1100 nm. The optical band-gap is higher than 3.26 eV for all polysilanes indicating a low probability of optical absorption processes in the visible range. The morphology of the pristine samples shows isotropically distributed granular formations. The polymer surface was oriented by rubbing with two types of velvet: one with short fibers and the other with long fibers. The latter generates higher surface anisotropy, as shown by the reduction of the surface texture direction index values. The presence of methylhydrosilyl units allows a denser packing of the polymer structure and thus finer surface periodicities, leading to better orientation of the nematic molecules on the polysilane surface.

  10. Modeling of thin films growth processes in the early stage for atoms with covalent bonds

    International Nuclear Information System (INIS)

    Tupik, V A; Margolin, V I; Su, Chu Trong

    2017-01-01

    Computer simulation for obtaining thin film’s growth process at an early stage with the proposed model of atoms with isotropic and anisotropic interactions been considered. Carrying out the procedure for analyzing the problem on the basis of the program being implemented, computer simulation of thin film growth processes has been carried out on several examples. The results of computer simulation of the growth process of thin film on a given substrate and an aggregate in a vacuum condition are shown. Some characteristic distributions of the obtained structure have been carried out to evaluate the proposed adequate model and to reflect the high complexity of thin films growth process. (paper)

  11. Influence of post-deposition annealing on structural, morphological and optical properties of copper (II) acetylacetonate thin films.

    Science.gov (United States)

    Abdel-Khalek, H; El-Samahi, M I; El-Mahalawy, Ahmed M

    2018-05-21

    In this study, the effect of thermal annealing under vacuum conditions on structural, morphological and optical properties of thermally evaporated copper (II) acetylacetonate, cu(acac) 2 , thin films were investigated. The copper (II) acetylacetonate thin films were deposited using thermal evaporation technique at vacuum pressure ~1 × 10 -5  mbar. The deposited films were thermally annealed at 323, 373, 423, and 473 K for 2 h in vacuum. The thermogravimetric analysis of cu(acac) 2 powder indicated a thermal stability of cu(acac) 2 up to 423 K. The effects of thermal annealing on the structural properties of cu(acac) 2 were evaluated employing X-ray diffraction method and the analysis showed a polycrystalline nature of the as-deposited and annealed films with a preferred orientation in [1¯01] direction. Fourier transformation infrared (FTIR) technique was used to negate the decomposition of copper (II) acetylacetonate during preparation or/and annealing up to 423 K. The surface morphology of the prepared films was characterized by means of field emission scanning electron microscopy (FESEM). A significant enhancement of the morphological properties of cu(acac) 2 thin films was obtained till the annealing temperature reaches 423 K. The variation of optical constants that estimated from spectrophotometric measurements of the prepared thin films was investigated as a function of annealing temperature. The annealing process presented significantly impacted the nonlinear optical properties such as third-order optical susceptibility χ (3) and nonlinear refractive index n 2 of cu(acac) 2 thin films. Copyright © 2018 Elsevier B.V. All rights reserved.

  12. Properties of nickel films growth by radio frequency magnetron sputtering at elevated substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Muslim, Noormariah, E-mail: 14h8702@ubd.edu.bn [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Soon, Ying Woan [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Physical and Geological Sciences, Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam); Lim, Chee Ming; Voo, Nyuk Yoong [Centre for Advanced Material and Energy Sciences, Universiti Brunei Darussalam, Jalan Tungku Link, Gadong BE1410 (Brunei Darussalam)

    2016-08-01

    Pure nickel (Ni) thin films of thicknesses of 100 nm were deposited on glass substrates by radio frequency magnetron sputtering at a power of 100 W and at various substrate temperatures i.e., room temperature, 100, 200, and 300 °C. The crystalline structure, surface topography, surface morphology, electrical resistivity, and optical properties of the deposited films were studied. The properties of the Ni films could be controlled by altering the substrate temperature. Specifically, the films featured a face-centered cubic crystalline structure with predominant (111) crystallite orientation at all the substrate temperatures employed, as observed from the X-ray diffraction analysis. Films deposited at substrate temperatures greater than 200 °C additionally displayed crystalline (200) and (220) diffraction peaks. The surface morphology analysis revealed that the grain size of the Ni thin films increased with increasing substrate temperatures employed. This increase was accompanied with a decrease in the resistivity of the Ni films. The surface roughness of the films increased with increasing substrate temperatures employed, as observed from the atomic force microscopy analysis. - Highlights: • RF magnetron sputtering is a good alternative method to deposit Ni films. • Properties of Ni films could be controlled simply by tuning substrate temperatures. • Crystallite size and surface roughness increased with substrate temperatures. • Electrical resistivity reduced with increasing substrate temperatures. • Optical properties also changed with substrate temperatures.

  13. Changes in morphology and growth of the mudskipper (Periophthalmus argentilineatus) associated with coastal pollution

    NARCIS (Netherlands)

    Kruitwagen, G.; Hecht, T.; Pratap, H.B.; Wendelaar Bonga, S.E.

    2006-01-01

    In this paper a comparison is made between the growth and morphology of barred mudskippers (Periophthalmus argentilineatus) from six mangrove forests along the coast of Tanzania. The fish populations from unpolluted sites consisted of different size classes, whereas only small sized fish were

  14. The effect of salinity on the growth, morphology and physiology of ...

    African Journals Online (AJOL)

    The salinity of water and soil decreases the growth and yield of agricultural products. Salinity affects many physiological and morphological processes of plant by influencing soil solution osmotic potential and ion absorption and accumulation of minerals. To evaluate the effect of salinity on some physiological and ...

  15. Root morphology and growth of bare-root seedlings of Oregon white oak

    Science.gov (United States)

    Peter J. Gould; Constance A. Harrington

    2009-01-01

    Root morphology and stem size were evaluated as predictors of height and basal-area growth (measured at groundline) of 1-1 Oregon white oak (Quercus garryana Dougl. ex Hook.) seedlings planted in raised beds with or without an additional irrigation treatment. Seedlings were classified into three root classes based on a visual assessment of the...

  16. Morphology and physiology of the dimorphic fungus Mucor circinelloides (syn. M. racemosus) during anaerobic growth

    DEFF Research Database (Denmark)

    Lübbehüsen, Tina Louise; Nielsen, Jens; Mcintyre, Mhairi

    2003-01-01

    The dimorphic Mucor circinelloides requires an anaerobic atmosphere and the presence of 30% CO2 to grow as a multipolar budding yeast, otherwise hyphal growth predominates. Establishing other means to control the morphology would be a distinct advantage in the development of a fermentation process...

  17. A Study on Organic-Metal Halide Perovskite Film Morphology, Interfacial Layers, Tandem Applications, and Encapsulation

    Science.gov (United States)

    Fisher, Dallas A.

    Organic-metal halide perovskites have brought about a new wave of research in the photovoltaic community due to their ideally suited optical and electronic parameters. In less than a decade, perovskite solar cell performance has skyrocketed to unprecedented efficiencies with numerous reported methodologies. Perovskites face many challenges with high-quality film morphology, interfacial layers, and long-term stability. In this work, these active areas are explored through a combination of studies. First, the importance of perovskite film precursor ratios is explored with an in-depth study of carrier lifetime and solvent-grain effects. It was found that excess lead iodide precursor greatly improves the film morphology by reducing pinholes in the solar absorber. Dimethyl sulfoxide (DMSO) solvent was found to mend grains, as well as improve carrier lifetime and device performance, possibly by passivation of grain boundary traps. Second, applications of perovskite with tandem cells is investigated, with an emphasis for silicon devices. Perovskites can easily be integrated with silicon, which already has strong market presence. Additionally, both materials' bandgaps are ideally suited for maximum tandem efficiency. The silicon/perovskite tandem device structure necessitated the optimization of inverted (p-i-n) structure devices. PEDOT:PSS, copper oxide, and nickel oxide p-type layers were explored through a combination of photoluminescent, chemical reactivity, and solar simulation results. Results were hindered due to resistive ITO and rough silicon substrates, but tandem devices displayed Voc indicative of proper monolithic performance. Third, replacement of titanium dioxide n-type layer with iron oxide (Fe 2O3, common rust) was studied. Iron oxide experiences less ultraviolet instability than that of titanium dioxide under solar illumination. It was found that current density slightly decreased due to parasitic absorption from the rust, but that open circuit voltage

  18. Morphological evolution in dewetting polystyrene/polyhedral oligomeric silsesquioxane thin film bilayers.

    Science.gov (United States)

    Paul, Rituparna; Karabiyik, Ufuk; Swift, Michael C; Hottle, John R; Esker, Alan R

    2008-05-06

    Morphological evolution in dewetting thin film bilayers of polystyrene (PS) and a polyhedral oligomeric silsesquioxane (POSS), trisilanolphenyl-POSS (TPP), was studied as a function of annealing temperature and annealing time. The results demonstrate unique dewetting morphologies in PS/TPP bilayers at elevated temperatures that are significantly different from those typically observed in dewetting polymer/polymer bilayers. During temperature ramp studies by optical microscopy (OM) in the reflection mode, PS/TPP bilayers form cracks with a weak optical contrast at approximately 130 degrees C. The crack formation is attributed to tensile stresses within the upper TPP layer. The weak optical contrast of the cracks observed in the bilayers for annealing temperatures below approximately 160 degrees C is consistent with the cracking and dewetting of only the upper TPP layer from the underlying PS layer. The optical contrast of the morphological features is significantly enhanced at annealing temperatures of >160 degrees C. This observation suggests dewetting of both the upper TPP and the lower PS layers that results in the exposure of the silicon substrate. Upon annealing the PS/TPP bilayers at 200 degrees C in a temperature jump experiment, the upper TPP layer undergoes instantaneous cracking as observed by OM. These cracks in the upper TPP layer serve as nucleation sites for rapid dewetting and aggregation of the TPP layer, as revealed by OM and atomic force microscopy (AFM). X-ray photoelectron spectroscopy (XPS) results indicated that dewetting of the lower PS layer ensued for annealing times >5 min and progressed up to 90 min. For annealing times >90 min, OM, AFM, and XPS results revealed complete dewetting of both the layers with the formation of TPP encapsulated PS droplets.

  19. Low Temperature Hydrothermal Growth of ZnO Nanorod Films for Schottky Diode Application

    International Nuclear Information System (INIS)

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    The purpose of this research is to report on the fabrication and characterizations of Pd/ZnO nanorod-based Schottky diodes for optoelectronic applications. ZnO nanorods (NRs) were grown on silicon (Si) substrates by a two step hydrothermal method. In the first step, a seed layer of pure ZnO was deposited from a solution of zinc acetate and ethyl alcohol, and then in the second step, the main growth of the ZnO NRs was done over the seed layer. The structural morphology and optical properties of the ZnO NR films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. The electrical characterization of the Pd/ZnO NR contacts was studied using a current-voltage (I-V) tool. The ZnO NR films exhibited a wurtzite ZnO structure,and the average length of the ZnO NRs were in the range of 750 nm to 800 nm. The values of ideality factor, turn-on voltage and reverse saturation current were calculated from the I-V characteristics of Pd/ZnO NR-based Schottky diodes. The study demonstrates that Pd/ZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute for conventional Schottky diodes for optoelectronic applications.

  20. Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

    KAUST Repository

    Garcí a-Cerda, L. A.; Puente-Urbina, B. A.; Quevedo-Ló pez, Manuel Angel Quevedo; Gnade, Bruce E.; Baldenegro-Pé rez, Leonardo Aurelio; Alshareef, Husam N.; Herná ndez-Landaverde, Martí n Adelaido

    2010-01-01

    In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological

  1. Morphology effects on spin-dependent transport and recombination in polyfluorene thin films

    Science.gov (United States)

    Miller, Richards; van Schooten, K. J.; Malissa, H.; Joshi, G.; Jamali, S.; Lupton, J. M.; Boehme, C.

    2016-12-01

    We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by preforming continuous wave (cw) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and room temperature using microwave frequencies between about 1 GHz and 20 GHz, as well as pulsed EDMR at the X band (10 GHz). Variable frequency EDMR allows us to establish the role of spin-orbit coupling in spin-dependent processes whereas pulsed EDMR allows for the observation of coherent spin motion effects. We used PFO for this study in order to allow for the investigation of the effects of microscopic morphological ordering since this material can adopt two distinct intrachain morphologies: an amorphous (glassy) phase, in which monomer units are twisted with respect to each other, and an ordered (β) phase, where all monomers lie within one plane. In thin films of organic light-emitting diodes, the appearance of a particular phase can be controlled by deposition parameters and solvent vapor annealing, and is verified by electroluminescence spectroscopy. Under bipolar charge-carrier injection conditions, we conducted multifrequency cw EDMR, electrically detected Rabi spin-beat experiments, and Hahn echo and inversion-recovery measurements. Coherent echo spectroscopy reveals electrically detected electron-spin-echo envelope modulation due to the coupling of the carrier spins to nearby nuclear spins. Our results demonstrate that, while conformational disorder can influence the observed EDMR signals, including the sign of the current changes on resonance as well as the magnitudes of local hyperfine fields and charge-carrier spin-orbit interactions, it does not qualitatively affect the nature of spin-dependent transitions in this material. In both morphologies, we observe the presence of at least two different spin-dependent recombination processes. At room temperature and 10 K, polaron-pair recombination through weakly spin-spin coupled

  2. The growth of nanostructured Cu{sub 2}ZnSnS{sub 4} films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Che Sulaiman, Nurul Suhada; Nee, Chen Hon [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Ling [Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Lee, Yen Sian [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia); Tou, Teck Yong [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia); Yap, Seong Shan, E-mail: seongshan@gmail.com [UM Power Energy Dedicated Advanced Centre (UMPEDAC), University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-11-01

    Highlights: • Nanostructured CZTS films were grown at room temperature by using 355 nm laser. • CZTS films with E{sub g} of 1.9 eV have been obtained at 2 J cm{sup −2} at room temperature. • At high fluence, Cu/Sn rich droplets affected the overall quality of the films. • Improved crystallinity and E{sub g} of 1.5 eV was obtained at substrate temperature as low as 100 °C. - Abstract: In this work, we investigated on the growth of Cu{sub 2}ZnSnS{sub 4} films by using pulsed Nd:YAG laser (355 nm) ablation of a quaternary Cu{sub 2}ZnSnS{sub 4} target. Depositions were performed at laser fluence from 0.5 to 4 J cm{sup −2}. The films were grown at substrate temperature from 27 °C to 300 °C onto glass and silicon substrates. The dependence of the film morphology, composition, and optical properties are studied and discussed with respect to laser fluence and substrate temperature. Composition analysis from energy dispersive X-ray spectral results show that CZTS films with composition near stoichiometric were obtained at an optimized fluence at 2 J cm{sup −2} by 355 nm laser where the absorption coefficient is >10{sup 4} cm{sup −1}, and optical band gap from a Tauc plot was ∼1.9 eV. At high fluence, Cu and Sn rich droplets were detected which affect the overall quality of the films. The presence of the droplets was associated to the high degree of preferential and subsurface melting on the target during high fluence laser ablation. Crystallinity and optical band gap (1.5 eV) were improved when deposition was performed at substrate temperature of 100 °C.

  3. The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

    International Nuclear Information System (INIS)

    Kotsuki, Kenji; Tanaka, Hiroshige; Obata, Seiji; Stauss, Sven; Terashima, Kazuo; Saiki, Koichiro

    2014-01-01

    We have investigated the film morphology and the field effect mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) thin films which were formed by spin coating on the SiO 2 substrate with solution-processed graphene electrodes. The domain size and the density of aggregates in the C8-BTBT film showed the same dependence on the spinning speed. These competitive two factors (domain size and density of aggregates) give an optimum spinning speed, at which the field effect mobility of C8-BTBT transistor showed a maximum (2.6 cm 2 /V s). This result indicates the importance of spinning speed in the fabrication of solution processed organic thin film transistors by spin coating.

  4. Investigations on growth morphology, bulk growth and crystalline perfection of L-threonine, an organic nonlinear optical material

    International Nuclear Information System (INIS)

    Linet, J. Mary; Das, S. Jerome

    2010-01-01

    L-threonine single crystal was successfully grown from aqueous solution. The morphology of the grown crystal was compared with the predicted morphology using Bravais-Friedel-Donnay-Harker law and was found to be in good agreement with the predicted morphology. Good optical quality bulk single crystal of enhanced size has been grown using unidirectional crystal growth method. High-resolution X-ray analysis study resulted in a rocking curve with a full width half maximum of 20 arc sec exhibiting the good crystalline quality of the grown crystal. The optical transmission study shows 90% of transmission in the entire visible region that exhibits the good optical quality of the grown crystal. The mechanical properties were analyzed by Vicker's microhardness method.

  5. Structural, morphological and local electric properties of TiO2 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Gyoergy, E; Pino, A Perez del; Sauthier, G; Figueras, A; Alsina, F; Pascual, J

    2007-01-01

    Titanium dioxide (TiO 2 ) thin films were synthesized on (1 0 0) Si substrates by reactive pulsed laser deposition (PLD) technique. A frequency quadrupled Nd : YAG (λ = 266 nm, τ FWHM ≅ 5 ns, ν = 10 Hz) laser source was used for the irradiations of metallic Ti targets. The experiments were performed in controlled oxygen atmosphere. Crystallinity, surface morphology and local electric properties of the obtained oxide thin films were investigated by x-ray diffractometry, micro-Raman spectroscopy and current sensing atomic force microscopy. An inter-relation was found between the surface morphology, the crystalline structure and the nano-scale electric properties which open the possibility of synthesizing by the PLD technique TiO 2 thin films with tunable functional properties for future applications such as photocatalysts, gas sensors or solar energy converters

  6. Effect of layered silicate content on the morphology and thermal properties of Poly(vinyl alcohol) films

    International Nuclear Information System (INIS)

    Silva, Jessica R.M.B. da; Santos, Barbara F.F. dos; Leite, Itamara F.

    2015-01-01

    This study aims to evaluate the effect of layered silicate content on the morphology and thermal properties of PVA films. The PVA/layered silicate (AN) films were prepared by intercalation solution, using 1 to 2% of bentonite with respect to the PVA total weight. Then the films were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), thermogravimetry (TG) and differential scanning calorimetry (DSC). Results of the FTIR revealed interaction between the functional groups of the PVA and the layered silicate. The XRD analysis showed that nanocomposites with intercalated and partially exfoliated morphology were obtained. The results of TG showed that the nanocomposite PVA/2%AN showed higher thermal stability compared to PVA/1%AN. The DSC results showed that the addition of AN to the PVA did not affect crystallization rate, as well as promoted a reduction in glass transition temperature and melting of the PVA. (author)

  7. Screen-printed carbon electrode modified on its surface with amorphous carbon nitride thin film: Electrochemical and morphological study

    Energy Technology Data Exchange (ETDEWEB)

    Ghamouss, F. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France); Tessier, P.-Y. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Djouadi, A. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Besland, M.-P. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Boujtita, M. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France)]. E-mail: mohammed.boujtita@univ-nantes.fr

    2007-04-20

    The surface of a screen-printed carbon electrode (SPCE) was modified by using amorphous carbon nitride (a-CN {sub x}) thin film deposited by reactive magnetron sputtering. Scanning electron microscopy and photoelectron spectroscopy measurements were used to characterise respectively the morphology and the chemical structure of the a-CN {sub x} modified electrodes. The incorporation of nitrogen in the amorphous carbon network was demonstrated by X ray photoelectron spectroscopy. The a-CN {sub x} layers were deposited on both carbon screen-printed electrode (SPCE) and silicon (Si) substrates. A comparative study showed that the nature of substrate, i.e. SPCE and Si, has a significant effect on both the surface morphology of deposited a-CN {sub x} film and their electrochemical properties. The improvement of the electrochemical reactivity of SPCE after a-CN {sub x} film deposition was highlighted both by comparing the shapes of voltammograms and calculating the apparent heterogeneous electron transfer rate constant.

  8. Mathematical modelling of thin films growth and calculation of coefficients reflection, transmission and absorption waves

    Science.gov (United States)

    Istratov, A. V.; Gerke, M. N.

    2018-01-01

    Progress in nano- and microsystem technology is directly related to the development of thin-film technologies. At the present time, thin metal films can serve as the basis for the creation of new instruments for nanoelectronics. One of the important parameters of thin films affecting the characteristics of devices is their optical properties. That is why the island structures, whose optical properties, can change in a wide range depending on their morphology, are of increasing interest. However, despite the large amount of research conducted by scientists from different countries, many questions about the optimal production and use of thin films remain unresolved.

  9. Morphology of growth of Bi2Sr2CaCu2O8 single crystals

    Science.gov (United States)

    Indenbom, M. V.; van der Beek, C. J.; Berseth, V.; Wolf, Th.; Berger, H.; Benoit, W.

    1996-12-01

    A good correlation of twins on the basal surface of flux-grown Bi2Sr2CaCu2Ox (BSCCO) single crystals with surface. growth steps is observed, the b-axis being perpendicular to the steps and, thus, parallel to the growth direction. It is found that mono-twin BSCCO single crystals produced by the travelling solvent floating zone method also grow