Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

Science.gov (United States)

Zhu, Q. X.; Wang, W.; Zhao, X. Q.; Li, X. M.; Wang, Y.; Luo, H. S.; Chan, H. L. W.; Zheng, R. K.

2012-05-01

Tensiled La0.5Sr0.5CoO3 (LSCO) thin films were epitaxially grown on piezoelectric 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. Due to the epitaxial nature of the interface, the lattice strain induced by ferroelectric poling or the converse piezoelectric effect in the PMN-PT substrate is effectively transferred to the LSCO film and thus reduces the tensile strain of the film, giving rise to a decrease in the resistivity of the LSCO film. We discuss these strain effects within the framework of the spin state transition of Co3+ ions and modification of the electronic bandwidth that is relevant to the induced strain. By simultaneously measuring the strain and the resistivity, quantitative relationship between the resistivity and the strain was established for the LSCO film. Both theoretical calculation and experimental results demonstrate that the ferroelectric field effect at room temperature in the LSCO/PMN-PT field-effect transistor is minor and could be neglected. Nevertheless, with decreasing temperature, the ferroelectric field effect competes with the strain effect and plays a more and more important role in influencing the electronic transport properties of the LSCO film, which we interpreted as due to the localization of charge carriers at low temperature.

Relation between film thickness and surface doping of MoS2 based field effect transistors

Science.gov (United States)

Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

2018-05-01

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

Tunability of the Quantum Spin Hall Effect in Bi(110) Films: Effects of Electric Field and Strain Engineering.

Science.gov (United States)

Li, Sheng-Shi; Ji, Wei-Xiao; Li, Ping; Hu, Shu-Jun; Cai, Li; Zhang, Chang-Wen; Yan, Shi-Shen

2017-06-28

The quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to their robust gapless edge states inside insulating bulk gap. However, the currently discussed QSH insulators usually suffer from ultrahigh vacuum or low temperature due to the small bulk gap, which limits their practical applications. Searching for large-gap QSH insulators is highly desirable. Here, the tunable QSH state of a Bi(110) films with a black phosphorus (BP) structure, which is robust against structural deformation and electric field, is explored by first-principles calculations. It is found that the two-monolayer BP-Bi(110) film obtains a tunable large bulk gap by strain engineering and its QSH effect shows a favorable robustness within a wide range of combinations of in-plane and out-of-plane strains, although a single in-plane compression or out-of-plane extension may restrict the topological phase due to the self-doping effect. More interestingly, in view of biaxial strain, two competing physics on band topology induced by bonding-antibonding and p x,y -p z band inversions are obtained. Meanwhile, the QSH effect can be persevered under an electric field of up to 0.9 V/Å. Moreover, with appropriate in-plane strain engineering, a nontrivial topological phase in a four-monolayer BP-Bi(110) film is identified. Our findings suggest that these two-dimensional BP-Bi(110) films are ideal platforms of the QSH effect for low-power dissipation devices.

Electric field effect on exchange interaction in ultrathin Co films with ionic liquids

Science.gov (United States)

Ishibashi, Mio; Yamada, Kihiro T.; Shiota, Yoichi; Ando, Fuyuki; Koyama, Tomohiro; Kakizakai, Haruka; Mizuno, Hayato; Miwa, Kazumoto; Ono, Shimpei; Moriyama, Takahiro; Chiba, Daichi; Ono, Teruo

2018-06-01

Electric-field modulations of magnetic properties have been extensively studied not only for practical applications but also for fundamental interest. In this study, we investigated the electric field effect on the exchange interaction in ultrathin Co films with ionic liquids. The exchange coupling J was characterized from the direct magnetization measurement as a function of temperature using Pt/ultrathin Co/MgO structures. The trend of the electric field effect on J is in good agreement with that of the theoretical prediction, and a large change in J by applying a gate voltage was observed by forming an electric double layer using ionic liquids.

Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

International Nuclear Information System (INIS)

Nakahara, Yoshio; Kawa, Haruna; Yoshiki, Jun; Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio; Yamakado, Hideo; Fukuda, Hisashi; Kimura, Keiichi

2012-01-01

Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol–gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 °C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol–gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: ► Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. ► The ultra-thin PSQ film could be cured at low temperatures of less than 120 °C. ► The PSQ film showed the almost perfect solubilization resistance to organic solvent. ► The surface of the PSQ film was very smooth at a nano-meter level. ► Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

MIS field effect transistor with barium titanate thin film as a gate insulator

Energy Technology Data Exchange (ETDEWEB)

Firek, P., E-mail: pfirek@elka.pw.edu.p [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Werbowy, A.; Szmidt, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

2009-11-25

The properties of barium titanate (BaTiO{sub 3}, BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO{sub 3} (containing La{sub 2}O{sub 3} admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO{sub 3} + La{sub 2}O{sub 3} (2 wt.%) target. In the paper transfer and output current-voltage (I-V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (V{sub TH}), are determined and discussed.

TH-CD-BRA-06: Magnetic Field Effects On Gafchromic-Film Response in MR-IGRT

International Nuclear Information System (INIS)

Reynoso, F; Curcuru, A; Green, O; Mutic, S; Santanam, L; Das, I

2016-01-01

Purpose: To investigate the effects of magnetic fields in radiochromic films (RCF). Magnetokinetic changes may affect crystal orientation and polymerization within active layer of RCF, these effects are investigated in Magnetic Resonance Image-guided Radiotherapy (MR-IGRT). Methods: Gafchromic EBT2 RCF were irradiated in a 30×30×30 cm 3 solid water phantom using a ViewRay MRIdian Co-60 MRI guided radiotherapy system (B=0.35 T). Fifteen 20.3×25.4 cm 2 EBT2 film sheets were placed at three different depths (d=0.5, 5 and 10 cm) and irradiated using 5 different treatment plans. The plans were computed using the MRIdian treatment planning system to deliver 2, 4, 6, 8, and 10 Gy at a depth of 10 cm. The films were scanned using an Epson Expression 10000 XL flat-bed document scanner in transmission mode. Films were processed before and after irradiation to obtain a net optical density (netOD) for each color channel separately. Scanning electron microscope (SEM) images were obtained to compare the active layer of selected samples. Results: The results show the red channel netOD decreases between 1.3–12.3 % (average of 5.95 %) for doses above 2.8 Gy, with a linear increase in this effect for higher doses. Green channel netOD showed similar results with a decrease between 1.2–10.5 % (average of 4.09 %) for doses above 3.5 Gy. Blue channel showed the weakest effect between 1.3–2.9 % (average of 1.94 %) for doses above 8.0 Gy. SEM images show changes in crystal orientation within active layer in RCF exposed in a magnetic field. Conclusion: The presence of a magnetic field affects crystal orientation and polymerization during irradiation, decreasing netOD by an average of 5.95 % in the red channel. The under response is dependent on dose and differs by up to 12.3 % at 17.6 Gy. The results show that magnetokinetic effects should be carefully considered in MR-IGRT.

Field-impressed anisotropy of susceptibility in iron-terbium thin films

International Nuclear Information System (INIS)

Stephenson, A.; Booth, N.A.

1995-01-01

Two thin films of Fe 1-x Tb x where x=0.17 and 0.23 are shown to exhibit the effect of field-impressed anisotropy. After application of a direct field of 80 mT, which gives them an isothermal remanent magnetization (IRM) in their plane, the anisotropy of initial susceptibility differs from that measured after the films have been tumble-demagnetized. By subtracting the susceptibility results of the tumble-demagnetized state from those obtained after the application of the 80 mT direct field, it is shown that the effect of this field is to decrease the susceptibility measured along the former applied field direction and to increase the susceptibility at right angles to this. The effect is almost certainly due to changes in domain alignment. Even though these films contain many domains, the above results are similar to those previously obtained for single-domain γFe 2 O 3 and magnetite particles. The sense of the effect is opposite to that for multi-domain magnetite particles where the susceptibility has been found to increase along the previously applied field direction. ((orig.))

The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

Science.gov (United States)

Qiu, Ye; Wu, Huaping; Wang, Jie; Lou, Jia; Zhang, Zheng; Liu, Aiping; Chai, Guozhong

2018-02-01

Compositionally graded ferroelectric thin films are found to produce large strain gradients, which can be used to tune the physical properties of materials through the flexoelectric effect, i.e., the coupling of polarization and the strain gradient. The influences of the flexoelectric effect on the polarization distribution and the piezoelectric properties in compositionally graded Ba1-xSrxTiO3 ferroelectric thin films are investigated by using an extended thermodynamic theory. The calculation results show that the presence of the flexoelectric effect tends to enhance and stabilize polarization components. The polarization rotation induced by the flexoelectric field has been predicted, which is accompanied by more uniform and orderly polarization components. A remarkable enhancement of piezoelectricity is obtained when the flexoelectric field is considered, suggesting that compositionally graded Ba1-xSrxTiO3 ferroelectric thin films with a large strain gradient are promising candidates for piezoelectric devices.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Science.gov (United States)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Science.gov (United States)

Brown, G. A.; Harrap, V.

1971-01-01

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Nakahara, Yoshio; Kawa, Haruna [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Yoshiki, Jun [Division of Information and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio [Konishi Chemical IND. Co., LTD., 3-4-77 Kozaika, Wakayama 641-0007 (Japan); Yamakado, Hideo [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Fukuda, Hisashi [Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kimura, Keiichi, E-mail: kkimura@center.wakayama-u.ac.jp [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan)

2012-10-01

Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol-gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 Degree-Sign C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol-gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: Black-Right-Pointing-Pointer Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. Black-Right-Pointing-Pointer The ultra-thin PSQ film could be cured at low temperatures of less than 120 Degree-Sign C. Black-Right-Pointing-Pointer The PSQ film showed the almost perfect solubilization resistance to organic solvent. Black-Right-Pointing-Pointer The surface of the PSQ film was very smooth at a nano-meter level. Black-Right-Pointing-Pointer Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

Electric field induced instabilities in free emulsion films

Energy Technology Data Exchange (ETDEWEB)

Tchoukov, P.; Dabros, T. [Natural Resources Canada, Devon, AB (Canada); Mostowfi, F. [Schlumberger DBR Technology Center, Edmonton, AB (Canada); Panchev, N. [Champion Technologies Inc., Houston, TX (United States); Czarnecki, J. [Alberta Univ., Edmonton, AB (Canada). Dept. of Chemical and Materials Engineering

2009-07-01

This presentation reported on a study that investigated the mechanism of electric field-induced breakdown of free emulsion films. Instability patterns were observed on the plane of a water-oil-water film following electric polarization. The length-scales of the instabilities were measured by analyzing images immediately after applying the electric field. Linear stability analysis was used to calculate the theoretical dominant wavelengths. The calculated values were found to be in good agreement with measured values. The films were formed in a thin film apparatus modified so that the oil film separated 2 aqueous phase compartments, each in contact with a platinum electrode. This enabled the measurement of disjoining pressure while applying the electric field to the film. It was concluded that breakdown of thin films induced by electric field has many applications, including electrostatic de-emulsification/desalination of crude oil and emulsion stability measurements. It was concluded that electroporation and dielectric breakdown may be responsible for electric field-induced breakdown. This study also presented evidence of an increase in electric field-induced instabilities in emulsion films resulting in rupture. tabs., figs.

Extraordinary Hall-effect in colloidal magnetic nanoparticle films

Energy Technology Data Exchange (ETDEWEB)

Ben Gur, Leah; Tirosh, Einat [School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Segal, Amir [School of Physics, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Markovich, Gil, E-mail: gilmar@post.tau.ac.il [School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Gerber, Alexander, E-mail: gerber@post.tau.ac.il [School of Physics, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel)

2017-03-15

Colloidal nickel nanoparticles (NPs) coated with polyvinylpyrrolidone (PVP) were synthesized. The nanoparticle dispersions were deposited on substrates and dried under mild heating to form conductive films. The films exhibited very small coercivity, nearly metallic conductivity, and a significant extraordinary Hall effect signal. This method could be useful for preparing simple, printed magnetic field sensors with the advantage of relatively high sensitivity around zero magnetic field, in contrast to magnetoresistive sensors, which have maximal field sensitivity away from zero magnetic field. - Highlights: • Ni nanoparticle ink capable of forming conductive films on drying. • The Ni nanoparticle films exhibit significant extraordinary Hall effect. • This system could be used for preparing printed magnetic field sensors integrated in 3D printed structures.

Upper critical magnetic field of superconducting films with magnetic impurities

International Nuclear Information System (INIS)

Lemberger, T.R.

1978-01-01

The upper critical magnetic field, H/sub c2/(T), of In-Mn and Pb-Mn alloy films was measured. H/sub c2/ was determined from the resistance of the films. The results were compared with the theory of Fulde and Maki. This theory assumes that the electron-phonon coupling is weak, and that the interaction between the impurity spins and the conduction electron spins is weak. The theory predicts that the pair-breaking effect of the magnetic impurities is temperature-independent, and that the pair-breaking effects of the magnetic impurities and the applied magnetic field are additive. Furthermore, it predicts explicitly the temperature dependence of H/sub c2/. The temperature dependence of H/sub c2/ for the In-Mn alloy films is well described by the Fulde-Maki theory, despite the moderately strong electron-phonon coupling and the strong interaction between the impurity spins and the conduction electron spins. The temperature dependence of H/sub c2/ for the Pb-Mn alloy films is not well described by the Fulde-Maki theory, probably due to the strong electron-phonon coupling in Pb. However, even without a quantitatively correct theory, one can conclude from the Pb-Mn data that the pair-breaking effect of the magnetic impurities is temperature independent, and that the pair-breaking effects of the magnetic impurities and the applied magnetic field are additive. For some of the Pb-Mn alloy films, there was a region of positive curvature in H/sub c2/(T) near the zero-field transition temperature. This positive curvature is not understood

Pentacene field-effect transistors by in situ and real time electrical characterization: Comparison between purified and non-purified thin films

International Nuclear Information System (INIS)

Liu, Shun-Wei; Wen, Je-Min; Lee, Chih-Chien; Su, Wei-Cheng; Wang, Wei-Lun; Chen, Ho-Chien; Lin, Chun-Feng

2013-01-01

We present an electrical characterization of the organic field-effect transistor with purified and non-purified pentacene by using in situ and real time measurements. The field-effect phenomenon was observed at the thickness of 1.5 nm (approximately one monolayer of pentacene) for purified pentacene, as compared to 3.0 nm for the non-purified counterpart. Moreover, the hole mobility is improved from 0.13 to 0.23 cm 2 /V s after the sublimation process to purify the pentacene. With atomic force microscopic measurements, the purified pentacene thin film exhibits a larger grain size and film coverage, resulting in better crystallinity of the thin film structure due to the absence of the impurities. This is further confirmed by X-ray diffraction patterns, which show higher intensities for the purified pentacene. - Highlights: • We present in-situ characterization for pentacene field-effect transistors. • The hole mobility is improved after the sublimation process to purify the pentacene. • Purified pentacene thin film exhibits a larger grain size and film coverage. • Hole mobility of pentacene is improved from 0.13 to 0.23 cm 2 /V s. • The discontinuity of grain boundary may cause the shift of threshold voltage

Pentacene field-effect transistors by in situ and real time electrical characterization: Comparison between purified and non-purified thin films

Energy Technology Data Exchange (ETDEWEB)

Liu, Shun-Wei, E-mail: swliu@mail.mcut.edu.tw [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan, ROC (China); Wen, Je-Min; Lee, Chih-Chien; Su, Wei-Cheng; Wang, Wei-Lun; Chen, Ho-Chien [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 10607 Taiwan, ROC (China); Lin, Chun-Feng [Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan, ROC (China)

2013-05-01

We present an electrical characterization of the organic field-effect transistor with purified and non-purified pentacene by using in situ and real time measurements. The field-effect phenomenon was observed at the thickness of 1.5 nm (approximately one monolayer of pentacene) for purified pentacene, as compared to 3.0 nm for the non-purified counterpart. Moreover, the hole mobility is improved from 0.13 to 0.23 cm{sup 2}/V s after the sublimation process to purify the pentacene. With atomic force microscopic measurements, the purified pentacene thin film exhibits a larger grain size and film coverage, resulting in better crystallinity of the thin film structure due to the absence of the impurities. This is further confirmed by X-ray diffraction patterns, which show higher intensities for the purified pentacene. - Highlights: • We present in-situ characterization for pentacene field-effect transistors. • The hole mobility is improved after the sublimation process to purify the pentacene. • Purified pentacene thin film exhibits a larger grain size and film coverage. • Hole mobility of pentacene is improved from 0.13 to 0.23 cm{sup 2}/V s. • The discontinuity of grain boundary may cause the shift of threshold voltage.

Effects of electric-field-induced piezoelectric strain on the electronic transport properties of La0.9Ce0.1MnO3 thin films

International Nuclear Information System (INIS)

Zheng, R.K.; Dong, S.N.; Wu, Y.Q.; Zhu, Q.X.; Wang, Y.; Chan, H.L.W.; Li, X.M.; Luo, H.S.; Li, X.G.

2012-01-01

The authors constructed multiferroic structures by growing La 0.9 Ce 0.1 MnO 3 (LCEMO) thin films on piezoelectric 0.68Pb(Mg 1/3 Nb 2/3 )O 3 –0.32PbTiO 3 (PMN-PT) single-crystal substrates. Due to the efficient elastic coupling at the interface, the electric-field-induced piezoelectric strain in PMN-PT substrates is effectively transferred to LCEMO films and thus, leads to a decrease in the resistance and an increase in the magnetoresistance of the films. Particularly, it was found that the resistance-strain coefficient [(ΔR/R) film /(Δε zz ) film ] of the LCEMO film was considerably enhanced by the application of magnetic fields, demonstrating strong coupling between the lattice and the spin degrees of freedom. (ΔR/R) film /(Δε zz ) film at 122 K was enhanced by ∼ 28.8% by a magnetic field of 1.2 T. An analysis of the overall results demonstrates that the phase separation is crucial to understand strain-mediated modulation of electronic transport properties of manganite film/PMN-PT multiferroic structures. - Highlights: ► La 0.9 Ce 0.1 Mn O3 films were epitaxially grown on piezoelectric single crystals. ► Piezoelectric strain influences the electronic transport properties of films. ► Magnetic field enhances the piezoelectric strain effect. ► Phase separation is crucial to understand the piezoelectric strain effect.

Effect of magnetic and electric coupling fields on micro- and nano- structure of carbon films in the CVD diamond process and their electron field emission property

Science.gov (United States)

Wang, Yijia; Li, Jiaxin; Hu, Naixiu; Jiang, Yunlu; Wei, Qiuping; Yu, Zhiming; Long, Hangyu; Zhu, Hekang; Xie, Youneng; Ma, Li; Lin, Cheng-Te; Su, Weitao

2018-03-01

In this paper, both electric field and magnetic field were used to assist the hot filament chemical vapor deposition (HFCVD) and we systematically investigated the effects of which on the (1) phase composition, (2) grain size, (3) thickness and (4) preferred orientation of diamond films through SEM, Raman and XRD. The application of magnetic field in electric field, so called ‘the magnetic and electric coupling fields’, enhanced the graphitization and refinement of diamond crystals, slowed down the decrease of film thickness along with the increase of bias current, and suppressed diamond (100) orientation. During the deposition process, the electric field provided additional energy to HFCVD system and generated large number of energetic particles which might annihilate at the substrate and lose kinetic energy, while the Lorentz force, provided by magnetic field, could constrict charged particles (including electrons) to do spiral movement, which prolonged their moving path and life, thus the system energy increased. With the graphitization of diamond films intensified, the preferred orientation of diamond films completely evolved from (110) to (100), until the orientation and diamond phase disappeared, which can be attributed to (I) the distribution and concentration ratio of carbon precursors (C2H2 and CH3) and (II) graphitization sequence of diamond crystal facets. Since the electron field emission property of carbon film is sensitive to the phase composition, thickness and preferred orientation, nano- carbon cones, prepared by the negative bias current of 20 mA and magnetic field strength of 80 Gauss, exhibited the lowest turn-on field of 6.1 V -1 μm-1.

Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

International Nuclear Information System (INIS)

Mengui, U.A.; Campos, R.A.; Alves, K.A.; Antunes, E.F.; Hamanaka, M.H.M.O.; Corat, E.J.; Baldan, M.R.

2015-01-01

Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films

Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

Energy Technology Data Exchange (ETDEWEB)

Mengui, U.A., E-mail: ursulamengui@gmail.com [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Campos, R.A.; Alves, K.A.; Antunes, E.F. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil); Hamanaka, M.H.M.O. [Centro de Tecnologia da Informação Renato Archer, Divisão de Superfícies de Interação e Displays, Rodovia D. Pedro I (SP 65) km 143.6, CP 6162, CEP 13089-500, Campinas, SP (Brazil); Corat, E.J.; Baldan, M.R. [INPE – Instituto Nacional de Pesquisas Espaciais Laboratório Associado de Sensores e Materiais – LAS, Av. dos Astronautas 1758, CP 515, CEP 12.245-970, São José dos Campos, SP (Brazil)

2015-04-15

Highlights: • Hot filament chemical vapor deposition using methane, hydrogen and a solution of urea in methanol produced nitrogen-doped diamond films. • Diamonds had the grain morphology changed for long growth time (28 h), and the nitrogen doping were evaluated by Raman spectroscopy. • Field emission characterization shows a decrease up to 70% in threshold field, related to reference diamond layer. - Abstract: Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler–Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

Film growth kinetics and electric field patterning during electrospray deposition of block copolymer thin films

Science.gov (United States)

Toth, Kristof; Hu, Hanqiong; Choo, Youngwoo; Loewenberg, Michael; Osuji, Chinedum

The delivery of sub-micron droplets of dilute polymer solutions to a heated substrate by electrospray deposition (ESD) enables precisely controlled and continuous growth of block copolymer (BCP) thin films. Here we explore patterned deposition of BCP films by spatially varying the electric field at the substrate using an underlying charged grid, as well as film growth kinetics. Numerical analysis was performed to examine pattern fidelity by considering the trajectories of charged droplets during flight through imposed periodic field variations in the vicinity of the substrate. Our work uncovered an unexpected modality for improving the resolution of the patterning process via stronger field focusing through the use of a second oppositely charged grid beneath a primary focusing array, with an increase in highly localized droplet deposition on the intersecting nodes of the grid. Substrate coverage kinetics are considered for homopolymer deposition in the context of simple kinetic models incorporating temperature and molecular weight dependence of diffusivity. By contrast, film coverage kinetics for block copolymer depositions are additionally convoluted with preferential wetting and thickness-periodicity commensurability effects. NSF GRFP.

Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

Directory of Open Access Journals (Sweden)

Kumar Vikram

2008-01-01

Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

Effects of small magnetic fields on the critical current of thin films

International Nuclear Information System (INIS)

Passos, Wagner de Assis Cangussu; Lisboa-Filho, Paulo Noronha; Ortiz, Wilson Aires; Kang, W.N.; Choi, Eun-Mi; Hyeong-Jin, Kim; Lee, Sung-Ik Lee

2002-01-01

Full text: Magnetic fields applied perpendicularly to superconducting thin films may produce dendritic patterns, where penetrated and Meissner regions coexist, as observed in Nb, YBaCuO and MgB 2 [1]. A temperature-dependent limiting-field, Hd(T), separates the dendritic mode from a critical-state-like penetration regime. Due to large demagnetizing factors in the perpendicular geometry, small fields may be enough to drive portions of the sample into the mixed state. Lack of symmetry and local defects might then permeate the dendritic mode. Hd(T) is related[2] to the bulk lower critical field, Hc1, which depends on the in-plane current density, J. Not surprisingly, Hd is depressed by J[3]. The dendritic mode can be detected by the AC-susceptibility: penetrated fingers act as intergranular material, and the imaginary component peaks at Tc-inter(J). Films of 0.2-0.4 microns, with millimeter lateral sizes, develop dendrites when submitted to Earth's field[2], what limits the critical current, J c . This contribution studies how J c is affected by field-induced granularity in thin films. 1. C. A. Duran et al., PRB 52 (1995) 75; P. Leiderer et al., PRL. 71 (1993) 2646; T.H. Johansen et al., Supercond. Sci. Technol. 14 (2001) 1. 2. W. A. Ortiz et al., Physica C 361 (2001) 267. 3. A. V. Bobyl et al., cond-mat/0201260, submitted to APL

Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors.

Science.gov (United States)

Okada, Jun; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

2016-04-01

Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

Asymptotic behavior of local dipolar fields in thin films

Energy Technology Data Exchange (ETDEWEB)

Bowden, G.J., E-mail: gjb@phys.soton.ac.uk [School of Physics and Astronomy, University of Southampton, SO17 1BJ (United Kingdom); Stenning, G.B.G., E-mail: Gerrit.vanderlaan@diamond.ac.uk [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Laan, G. van der, E-mail: gavin.stenning@stfc.ac.uk [ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom)

2016-10-15

A simple method, based on layer by layer direct summation, is used to determine the local dipolar fields in uniformly magnetized thin films. The results show that the dipolar constants converge ~1/m where the number of spins in a square film is given by (2m+1){sup 2}. Dipolar field results for sc, bcc, fcc, and hexagonal lattices are presented and discussed. The results can be used to calculate local dipolar fields in films with either ferromagnetic, antiferromagnetic, spiral, exponential decay behavior, provided the magnetic order only changes normal to the film. Differences between the atomistic (local fields) and macroscopic fields (Maxwellian) are also examined. For the latter, the macro B-field inside the film is uniform and falls to zero sharply outside, in accord with Maxwell boundary conditions. In contrast, the local field for the atomistic point dipole model is highly non-linear inside and falls to zero at about three lattice spacing outside the film. Finally, it is argued that the continuum field B (used by the micromagnetic community) and the local field B{sub loc}(r) (used by the FMR community) will lead to differing values for the overall demagnetization energy. - Highlights: • Point-dipolar fields in uniformly magnetized thin films are characterized by just three numbers. • Maxwell's boundary condition is partially violated in the point-dipole approximation. • Asymptotic values of point dipolar fields in circular monolayers scale as π/r.

Effects of the shape anisotropy and biasing field on the magnetization reversal process of the diamond-shaped NiFe nano films

Science.gov (United States)

Xu, Sichen; Yin, Jianfeng; Tang, Rujun; Zhang, Wenxu; Peng, Bin; Zhang, Wanli

2017-11-01

The effects of the planar shape anisotropy and biasing field on the magnetization reversal process (MRP) of the diamond-shaped NiFe nano films have been investigated by micromagnetic simulations. Results show that when the length to width ratio (LWR) of the diamond-shaped film is small, the MRP of the diamond-shaped films are sensitive to LWR. But when LWR is larger than 2, a stable domain switching mode is observed which nucleates from the center of the diamond and then expands to the edges. At a fixed LWR, the magnitude of the switching fields decrease with the increase of the biasing field, but the domain switching mode is not affected by the biasing field. Further analysis shows that demagnetization energy dominates over the MRP of the diamond-shaped films. The above LWR dependence of MRP can be well explained by a variation of the shape anisotropic factor with LWR.

Microwave study of magnetic field penetration parallel to thin niobium films

International Nuclear Information System (INIS)

Grbic, M.S.; Janjusevic, D.; Pozek, M.; Dulcic, A.; Wagner, T.

2007-01-01

Complex conductivity of high quality niobium thin films has been investigated by microwave technique in parallel static magnetic field. For the 40 nm thick film no vortices can be formed and the microwave penetration is defined by the strength of the superconducting order parameter which varies with the applied magnetic field. 160 nm thick measured film allows formation of two rows of vortices. Microwave dissipiation is dominated by dynamics of vortices which is strongly affected by size effects. Results have been compared with the generalised models of complex conductivity for low-dimensional superconductor in mixed state following earlier considerations by other authors

Size effects in thin films

CERN Document Server

Tellier, CR; Siddall, G

1982-01-01

A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

Electron field emission from screen-printed graphene/DWCNT composite films

International Nuclear Information System (INIS)

Xu, Jinzhuo; Pan, Rong; Chen, Yiwei; Piao, Xianqin; Qian, Min; Feng, Tao; Sun, Zhuo

2013-01-01

Highlights: ► The field emission performance improved significantly when adding graphene into DWCNTs as the emission material. ► We set up a model of pure DWCNT films and graphene/DWCNT composite films. ► We discussed the contact barrier between emission films and electric substrates by considering the Fermi energies of silver, DWCNT and graphene. - Abstract: The electron field emission properties of graphene/double-walled carbon nanotube (DWCNT) composite films prepared by screen printing have been systematically studied. Comparing with the pure DWCNT films and pure graphene films, a significant enhancement of electron emission performance of the composite films are observed, such as lower turn-on field, higher emission current density, higher field enhancement factor, and long-term stability. The optimized composite films with 20% weight ratio of graphene show the best electron emission performance with a low turn-on field of 0.62 V μm −1 (at 1 μA cm −2 ) and a high field enhancement factor β of 13,000. A model of the graphene/DWCNT composite films is proposed, which indicate that a certain amount of graphene will contribute the electron transmission in the silver substrate/composite films interface and in the interior of composite films, and finally improve the electron emission performance of the graphene/DWCNT composite films.

Extended-gate field-effect transistor (EG-FET) with molecularly imprinted polymer (MIP) film for selective inosine determination.

Science.gov (United States)

Iskierko, Zofia; Sosnowska, Marta; Sharma, Piyush Sindhu; Benincori, Tiziana; D'Souza, Francis; Kaminska, Izabela; Fronc, Krzysztof; Noworyta, Krzysztof

2015-12-15

A novel recognition unit of chemical sensor for selective determination of the inosine, renal disfunction biomarker, was devised and prepared. For that purpose, inosine-templated molecularly imprinted polymer (MIP) film was deposited on an extended-gate field-effect transistor (EG-FET) signal transducing unit. The MIP film was prepared by electrochemical polymerization of bis(bithiophene) derivatives bearing cytosine and boronic acid substituents, in the presence of the inosine template and a thiophene cross-linker. After MIP film deposition, the template was removed, and was confirmed by UV-visible spectroscopy. Subsequently, the film composition was characterized by spectroscopic techniques, and its morphology and thickness were determined by AFM. The finally MIP film-coated extended-gate field-effect transistor (EG-FET) was used for signal transduction. This combination is not widely studied in the literature, despite the fact that it allows for facile integration of electrodeposited MIP film with FET transducer. The linear dynamic concentration range of the chemosensor was 0.5-50 μM with inosine detectability of 0.62 μM. The obtained detectability compares well to the levels of the inosine in body fluids which are in the range 0-2.9 µM for patients with diagnosed diabetic nephropathy, gout or hyperuricemia, and can reach 25 µM in certain cases. The imprinting factor for inosine, determined from piezomicrogravimetric experiments with use of the MIP film-coated quartz crystal resonator, was found to be 5.5. Higher selectivity for inosine with respect to common interferents was also achieved with the present molecularly engineered sensing element. The obtained analytical parameters of the devised chemosensor allow for its use for practical sample measurements. Copyright © 2015 Elsevier B.V. All rights reserved.

Electron field emission from undoped and doped DLC films

International Nuclear Information System (INIS)

Chakhovskoi, A G; Evtukh, A A; Felter, T E; Klyui, N I; Kudzinovsky, S Y; Litovchenko, V G; Litvin, Y M

1999-01-01

Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH(sub 4):H(sub 2) and CH(sub 4):H(sub 2):N(sub 2) gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8% (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10(sup -6) Torr using the diode method with emitter-anode spacing set at 20(micro)m. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (V(sub th)) varies in a complex manner with nitrogen content. As a function of nitrogen content, V(sub th) initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp(sup 3) bonded) matrix with graphite-like inclusions

Soap-film flow induced by electric fields in asymmetric frames

Science.gov (United States)

Mollaei, S.; Nasiri, M.; Soltanmohammadi, N.; Shirsavar, R.; Ramos, A.; Amjadi, A.

2018-04-01

Net fluid flow of soap films induced by (ac or dc) electric fields in asymmetric frames is presented. Previous experiments of controllable soap film flow required the simultaneous use of an electrical current passing through the film and an external electric field or the use of nonuniform ac electric fields. Here a single voltage difference generates both the electrical current going through the film and the electric field that actuates on the charge induced on the film. The film is set into global motion due to the broken symmetry that appears by the use of asymmetric frames. If symmetric frames are used, the film flow is not steady but time dependent and irregular. Finally, we study numerically these film flows by employing the model of charge induction in ohmic liquids.

Measurement of surface charges on the dielectric film based on field mills under the HVDC corona wire

Science.gov (United States)

Donglai, WANG; Tiebing, LU; Yuan, WANG; Bo, CHEN; Xuebao, LI

2018-05-01

The ion flow field on the ground is one of the significant parameters used to evaluate the electromagnetic environment of high voltage direct current (HVDC) power lines. HVDC lines may cross the greenhouses due to the restricted transmission corridors. Under the condition of ion flow field, the dielectric films on the greenhouses will be charged, and the electric fields in the greenhouses may exceed the limit value. Field mills are widely used to measure the ground-level direct current electric fields under the HVDC power lines. In this paper, the charge inversion method is applied to calculate the surface charges on the dielectric film according to the measured ground-level electric fields. The advantages of hiding the field mill probes in the ground are studied. The charge inversion algorithm is optimized in order to decrease the impact of measurement errors. Based on the experimental results, the surface charge distribution on a piece of quadrate dielectric film under a HVDC corona wire is studied. The enhanced effect of dielectric film on ground-level electric field is obviously weakened with the increase of film height. Compared with the total electric field strengths, the normal components of film-free electric fields at the corresponding film-placed positions have a higher effect on surface charge accumulation.

Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

International Nuclear Information System (INIS)

Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

2014-01-01

Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

NUMERICAL SIMULATION OF MAGNETIC FIELD STRUCTURE IN CYLINDRICAL FILM SCREEN

Directory of Open Access Journals (Sweden)

G. F. Gromyko

2016-01-01

Full Text Available A numerical method for solving the boundary value problem for a nonlinear magnetostatic equation describing the external magnetostatic field penetration through the cylindrical film coating is developed. A mathematical model of the shielding problem based on the use of the boundary conditions of the third kind on the film surface is studied. The nonlinear dependence of the film magnetic permeability on magnetic field conforms with experimental data. The distribution of the magnetic field strength in the film layer and the magnetic permeability of the film material depending on the magnitude of the external magnetic field strength are investigated numerically.

Magnetic structures in ultra-thin Holmium films: Influence of external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, L.J. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Mello, V.D. [Departamento de Física, Universidade do Estado do Rio Grande do Norte, Mossoró 59625-620, RN (Brazil); Anselmo, D.H.A.L. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59600-900, RN (Brazil); Vasconcelos, M.S., E-mail: mvasconcelos@ect.ufrn.br [Escola de Ciência e Tecnologia, Universidade Federal do Rio Grande do Norte, 59072-970 Natal, RN (Brazil)

2015-03-01

We address the magnetic phases in very thin Ho films at the temperature interval between 20 K and 132 K. We show that slab size, surface effects and magnetic field due to spin ordering impact significantly the magnetic phase diagram. Also we report that there is a relevant reduction of the external field strength required to saturate the magnetization and for ultra-thin films the helical state does not form. We explore the specific heat and the susceptibility as auxiliary tools to discuss the nature of the phase transitions, when in the presence of an external magnetic field and temperature effects. The presence of an external field gives rise to the magnetic phase Fan and the spin-slip structures. - Highlights: • We analyze the magnetic phases of very thin Ho films in the temperature interval 20–132 K. • We show that slab size, etc. due to spin ordering may impact the magnetic phase diagram. • All magnetic phase transitions, for strong magnetic fields, are marked by the specific heat. • The presence of an external field gives rise to the magnetic phase Fan and the spin-slip one.

Ferromagnetic transitions of a spin-one Ising film in a surface and bulk transverse fields

International Nuclear Information System (INIS)

Saber, A.; Lo Russo, S.; Mattei, G.; Mattoni, A.

2002-01-01

Using the effective field theory method, we have calculated the Curie temperature of a spin-one Ising ferromagnetic film in a surface and bulk transverse fields. Numerical calculations give phase diagrams under various parameters. Surface exchange enhancement is considered. The dependence of the critical transverse field on film thickness, and phase diagrams in the fields, critical surface transverse field versus the bulk one are presented

Superradiance from an ultrathin film of three-level V-type atoms: interplay between splitting, quantum coherence and local-field effects

International Nuclear Information System (INIS)

Malyshev, V A; Carreno, F; Anton, M A; Calderon, Oscar G; Dominguez-Adame, F

2003-01-01

We carry out a theoretical study of the collective spontaneous emission (superradiance) from an ultrathin film comprised of three-level atoms with V configuration of the operating transitions. As the thickness of the system is small compared to the emission wavelength inside the film, the local-field correction to the averaged Maxwell field is relevant. We show that the interplay between the low-frequency quantum coherence within the subspace of the upper doublet states and the local-field correction may drastically affect the branching ratio of the operating transitions. This effect may be used for controlling the emission process by varying the doublet splitting and the amount of low-frequency coherence

Surface Treatment of Polypropylene Films Using Dielectric Barrier Discharge with Magnetic Field

International Nuclear Information System (INIS)

Wang Changquan; Zhang Guixin; Wang Xinxin; Chen Zhiyu

2012-01-01

Atmospheric pressure non-thermal plasma is of interest for industrial applications. In this study, polypropylene (PP) films are modified by a dielectric barrier discharge (DBD) with a non-uniform magnetic field in air at atmospheric pressure. The surface properties of the PP films before and after a DBD treatment are studied by using contact angle measurement, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The effect of treatment time on the surface modification with and without a magnetic field is investigated. It is found that the hydrophilic improvement depends on the treatment time and magnetic field. It is also found that surface roughness and oxygen-containing groups are introduced onto the PP film surface after the DBD treatment. Surface roughness and oxygen-containing polar functional groups of the PP films increase with the magnetic induction density. The functional groups are identified as C-O, C=O and O-C=O by using XPS analysis. It is concluded that the hydrophilic improvement of PP films treated with a magnetic field is due to a greater surface roughness and more oxygen-containing groups. (plasma technology)

Resistance switching induced by electric fields in manganite thin films

International Nuclear Information System (INIS)

Villafuerte, M; Juarez, G; Duhalde, S; Golmar, F; Degreef, C L; Heluani, S P

2007-01-01

In this work, we investigate the polarity-dependent Electric Pulses Induced Resistive (EPIR) switching phenomenon in thin films driven by electric pulses. Thin films of 0.5 Ca 0.5 MnO 3 (manganite) were deposited by PLD on Si substrate. The transport properties at the interface between the film and metallic electrode are characterized in order to study the resistance switching. Sample thermal treatment and electrical field history are important to be considered for get reproducible EPIR effect. Carriers trapping at the interfaces are considered as a possible explanation of our results

A model of film boiling in the presence of electric fields

Energy Technology Data Exchange (ETDEWEB)

Carrica, P.M.; Masson, V.; Clausse, A. [Centro Atomico Bariloche and Instituto Balseiro, Barilochi (Argentina)

1995-09-01

Recently it was found that, when a strong electric field is applied around a heated wire, two distinct film boiling heat transfer regimes are observed. In this paper, a semi-empirical model is derived to analyze the pool boiling process in the presence of non uniform electric field. The model takes into account the dielectrophoretic force acting on the bubbles as they grow and the effect of the electric field on the most dangerous wavelength. It is shown how the transition between the two film boiling regimes is possible for high strength electric fields. The threshold voltage for transition, transition heat fluxes and hysteresis values are compared with experimental outcomes showing a satisfactory agreement.

Fabrication of Co thin films using pulsed laser deposition method with or without employing external magnetic field

Energy Technology Data Exchange (ETDEWEB)

Ehsani, M.H., E-mail: Ehsani@semnan.ac.ir [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Mehrabad, M. Jalali [Thin Film Laboratory, Faculty of Physics, Semnan University (Iran, Islamic Republic of); Kameli, P. [Department of Physics, Isfahan University of technology, Isfahan 8415683111 (Iran, Islamic Republic of)

2016-11-01

In this work, the external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. Two specimens of Co films with different condition (with and without external magnetic field) were synthesized by pulsed laser deposition method. Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. During the deposition processes, the external applied magnetic field had been provided by a permanent magnet. The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field during deposition were performed. Comparison between experimental data and output data of the simulation show promising accommodation and approve the existence of a strong correlation between the structural and magnetic properties of the specimens, and deposition rate of Co thin films. - Graphical abstract: Simulation results of the cobalt particles tracing sputtered from the source to substrate with an external magnetic field. Convergence of the particles flux (left) and also the spiral motion of the cobalt particles (right) increase dramatically as they approach the substrate and NdFe35 magnet. - Highlights: • The external magnetic field effects on growth condition during deposition processes of the Co thin films were studied. • Structural and magnetic properties of the Co thin films were systematically studied, using atomic force microscope analysis and magnetization measurement, respectively. • The experimental results show that the external magnetic field enables one to tune the magnetic properties of the deposited thin films. • To clarify this effect, using Multi-Physics COMSOL simulation environment, a study of vapor flux by applied magnetic field

Spontaneous electric fields in solid films: spontelectrics

DEFF Research Database (Denmark)

Field, David; Plekan, Oksana; Cassidy, Andrew

2013-01-01

When dipolar gases are condensed at sufficiently low temperature onto a solid surface, they form films that may spontaneously exhibit electric fields in excess of 108V/m. This effect, called the ‘spontelectric effect’, was recently revealed using an instrument designed to measure scattering....... Heterolayers may also be laid down creating potential wells on the nanoscale. A model is put forward based upon competition between dipole alignment and thermal disorder, which is successful in reproducing the variation of the degree of dipole alignment and the spontelectric field with deposition temperature...

Effect of multi-dimensional ultraviolet light exposure on the growth of pentacene film and application to organic field-effect transistors.

Science.gov (United States)

Bae, Jin-Hyuk; Lee, Sin-Doo; Choi, Jong Sun; Park, Jaehoon

2012-05-01

We report on the multi-dimensional alignment of pentacene molecules on a poly(methyl methacrylate)-based photosensitive polymer (PMMA-polymer) and its effect on the electrical performance of the pentacene-based field-effect transistor (FET). Pentacene molecules are shown to be preferentially aligned on the linearly polarized ultraviolet (LPUV)-exposed PMMA-polymer layer, which is contrast to an isotropic alignment on the bare PMMA-polymer layer. Multi-dimensional alignment of pentacene molecules in the film could be achieved by adjusting the direction of LPUV exposed to the PMMA-polymer. The control of pentacene molecular alignment is found to be promising for the field-effect mobility enhancement in the pentacene FET.

Electron field emission for ultrananocrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Krauss, A. R.; Auciello, O.; Ding, M. Q.; Gruen, D. M.; Huang, Y.; Zhirnov, V. V.; Givargizov, E. I.; Breskin, A.; Chechen, R.; Shefer, E. (and others)

2001-03-01

Ultrananocrystalline diamond (UNCD) films 0.1--2.4 {mu}m thick were conformally deposited on sharp single Si microtip emitters, using microwave CH{sub 4}--Ar plasma-enhanced chemical vapor deposition in combination with a dielectrophoretic seeding process. Field-emission studies exhibited stable, extremely high (60--100 {mu}A/tip) emission current, with little variation in threshold fields as a function of film thickness or Si tip radius. The electron emission properties of high aspect ratio Si microtips, coated with diamond using the hot filament chemical vapor deposition (HFCVD) process were found to be very different from those of the UNCD-coated tips. For the HFCVD process, there is a strong dependence of the emission threshold on both the diamond coating thickness and Si tip radius. Quantum photoyield measurements of the UNCD films revealed that these films have an enhanced density of states within the bulk diamond band gap that is correlated with a reduction in the threshold field for electron emission. In addition, scanning tunneling microscopy studies indicate that the emission sites from UNCD films are related to minima or inflection points in the surface topography, and not to surface asperities. These data, in conjunction with tight binding pseudopotential calculations, indicate that grain boundaries play a critical role in the electron emission properties of UNCD films, such that these boundaries: (a) provide a conducting path from the substrate to the diamond--vacuum interface, (b) produce a geometric enhancement in the local electric field via internal structures, rather than surface topography, and (c) produce an enhancement in the local density of states within the bulk diamond band gap.

Field electron emission from branched nanotubes film

International Nuclear Information System (INIS)

Zeng Baoqing; Tian Shikai; Yang Zhonghai

2005-01-01

We describe the preparation and analyses of films composed of branched carbon nanotubes (CNTs). The CNTs were grown on a Ni catalyst film using chemical vapor deposition from a gas containing acetylene. From scanning electron microscope (SEM) and transmission electron microscope (TEM) analyses, the branched structure of the CNTs was determined; the field emission characteristics in a vacuum chamber indicated a lower turn on field for branched CNTs than normal CNTs

Tuning microstructure and magnetic properties of electrodeposited CoNiP films by high magnetic field annealing

Energy Technology Data Exchange (ETDEWEB)

Wu, Chun; Wang, Kai [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Li, Donggang, E-mail: lidonggang@smm.neu.edu.cn [School of Metallurgy, Northeastern University, Shenyang 110819 (China); Lou, Changsheng [School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159 (China); Zhao, Yue; Gao, Yang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China)

2016-10-15

A high magnetic field (up to 12 T) has been used to anneal 2.6-µm-thick Co{sub 50}Ni{sub 40}P{sub 10} films formed by pulse electrodeposition. The effects of high magnetic field annealing on the microstructure and magnetic properties of CoNiP thin films have been investigated. It was found that a high magnetic field accelerated a phase transformation from fcc to hcp and enhanced the preferred hcp-(002) orientation during annealing. Compared with the films annealed without a magnetic field, annealing at 12 T decreased the surface particle size, roughness, and coercivity, but increased the saturation magnetization and remanent magnetization of CoNiP films. The out-of-plane coercivity was higher than that the in-plane for the as-deposited films. After annealing without a magnetic field, the out-of-plane coercivity was equal to that of the in-plane. However, the out-of-plane coercivity was higher than that of the in-plane when annealing at 12 T. These results indicate that high magnetic field annealing is an effective method for tuning the microstructure and magnetic properties of thin films. - Highlights: • High magnetic field annealing accelerated phase transformation from γ to ε. • High magnetic field annealing enhanced preferred hcp-(002) orientation. • High magnetic field annealing decreased particle size, roughness and coercivity. • High magnetic field annealing increased the saturation and remanent magnetization.

Influence of heat treatment on field emission characteristics of boron nitride thin films

International Nuclear Information System (INIS)

Li Weiqing; Gu Guangrui; Li Yingai; He Zhi; Feng Wei; Liu Lihua; Zhao Chunhong; Zhao Yongnian

2005-01-01

Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 x 10 -4 Pa and the temperature of 800 and 1000 deg. C, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/μm and the emission current of 80 μA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 deg. C and disappeared at temperature of 1000 deg. C

Superconducting Film Flux Transformer for a Sensor of a Weak Magnetic Field

International Nuclear Information System (INIS)

Ichkitidze, L; Mironyuk, A

2012-01-01

The object of study is a superconducting film flux transformer in the form of a square shaped loop with the tapering operative strip used in a sensor of a weak magnetic field. The magnetosensitive film element based on the giant magnetoresistance effect is overlapped with the tapering operative strip of the flux transformer; it is separated from the latter by the insulator film. It is shown that the topological nanostructuring of the operative strip of the flux transformer increases its gain factor by one or more orders of magnitude, i.e. increases its efficiency, which leads to a significant improvement of important parameters of a magnetic-field sensor.

Droplet manipulation by an external electric field for crystalline film growth.

Science.gov (United States)

Komino, Takeshi; Kuwabara, Hirokazu; Ikeda, Masaaki; Yahiro, Masayuki; Takimiya, Kazuo; Adachi, Chihaya

2013-07-30

Combining droplet manipulation by the application of an electric field with inkjet printing is proposed as a unique technique to control the surface wettability of substrates for solution-processed organic field-effect transistors (FETs). With the use of this technique, uniform thin films of 2,7-dioctyl[1]benzothieno[2,3,-b][1]benzothiopene (C8-BTBT) could be fabricated on the channels of FET substrates without self-assembled monolayer treatment. High-speed camera observation revealed that the crystals formed at the solid/liquid interface. The coverage of the crystals on the channels depended on the ac frequency of the external electric field applied during film formation, leading to a wide variation in the carrier transport of the films. The highest hole mobility of 0.03 cm(2) V(-1) s(-1) was obtained when the coverage was maximized with an ac frequency of 1 kHz.

Pulsed laser deposition of semiconductor-ITO composite films on electric-field-applied substrates

International Nuclear Information System (INIS)

Narazaki, Aiko; Sato, Tadatake; Kawaguchi, Yoshizo; Niino, Hiroyuki; Yabe, Akira; Sasaki, Takeshi; Koshizaki, Naoto

2002-01-01

The DC electric-field effect on the crystallinity of II-VI semiconductor in composite systems has been investigated for CdS-ITO films fabricated via alternative pulsed laser deposition (PLD) of CdS and indium tin oxide (ITO) on electric-field-applied substrates. The alternative laser ablation was performed under irradiation of ArF excimer laser in mixture gas of helium and oxygen. The application of electric-field facilitated the preferential crystal-growth of CdS in nanometer scale at low pressure, whereas all the films grown without the field were amorphous. There is a large difference in the crystallization between the films grown on field-applied and heated substrates; the latter showed the crystal-growth with random orientations. This difference indicates that the existence of electric-field has an influence on the transformation from amorphous to crystalline phase of CdS. The driving force for the field-induced crystallization is also discussed in the light of the Joule heat

Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

International Nuclear Information System (INIS)

Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L.

2005-01-01

The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film

Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors

DEFF Research Database (Denmark)

Sandberg, H.G.O.; Frey, G.L.; Shkunov, M.N.

2002-01-01

Ultrathin films of regioregular poly(3-hexyl thiophene) (RR-P3HT) were deposited through a dip-coating technique and utilized as the semiconducting film in field-effect transistors (FETs). Proper selection of the substrate and solution concentration enabled the growth of a monolayer-thick RR-P3HT...... film. Atomic force microscopy (AFM), U-V-vis absorption spectroscopy, X-ray reflectivity, and grazing incidence diffraction were used to study the growth mechanism, thickness and orientation of self-organized monolayer thick RR-P3HT films on SiO2 surfaces. Films were found to adopt a Stranski......-Krastanov-type growth mode with formation of a very stable first monolayer. X-ray measurements show that the direction of pi-stacking in the films (the (010) direction) is parallel to the substrate, which is the preferred orientation for high field-effect carrier mobilities. The field-effect mobilities in all ultrathin...

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

2015-07-15

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

International Nuclear Information System (INIS)

Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

2015-01-01

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.

2012-06-22

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

Upper critical field of NbN film

International Nuclear Information System (INIS)

Ashkin, M.; Gavaler, J.R.

1978-01-01

It is proposed and experimentally verified that the anomalously high superconducting critical field normal to the surface of NbN films possessing a column-void microstructure is H/sub c3/, the field appropriate for surface superconductivity. It is also proposed that because the coherence length is much less than the lateral column dimension that the resistivity of the column and not the film enters calculations of the Maki parameter α. A previously noted discrepancy in α is removed by these proposals

Depolarization corrections to the coercive field in thin-film ferroelectrics

International Nuclear Information System (INIS)

Dawber, M; Chandra, P; Littlewood, P B; Scott, J F

2003-01-01

Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 μm to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

Depolarization corrections to the coercive field in thin-film ferroelectrics

CERN Document Server

Dawber, M; Littlewood, P B; Scott, J F

2003-01-01

Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 mu m to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

SURFACE FILMS TO SUPPRESS FIELD EMISSION IN HIGH-POWER MICROWAVE COMPONENTS

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay l

2014-02-07

Results are reported on attempts to reduce the RF breakdown probability on copper accelerator structures by applying thin surface films that could suppress field emission of electrons. Techniques for application and testing of copper samples with films of metals with work functions higher than copper are described, principally for application of platinum films, since platinum has the second highest work function of any metal. Techniques for application of insulating films are also described, since these can suppress field emission and damage on account of dielectric shielding of fields at the copper surface, and on account of the greater hardness of insulating films, as compared with copper. In particular, application of zirconium oxide films on high-field portions of a 11.424 GHz SLAC cavity structure for breakdown tests are described.

The order parameters of a spin-1 Ising film in a transverse field

International Nuclear Information System (INIS)

Saber, A.; Ainane, A.; Dujardin, F.; Saber, M.; Stebe, B.

1998-08-01

Using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions, the layer longitudinal magnetizations and quadrupolar moments of a spin-1 Ising film and their averages are examined. These quantities as functions of the temperature, the ratio of the surface exchange interactions to the bulk ones, the strength of the transverse field and the film thickness are calculated numerically and some interesting results are obtained. (author)

Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

Science.gov (United States)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

2018-05-01

We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

Effect of large compressive strain on low field electrical transport in La0.88Sr0.12MnO3 thin films

International Nuclear Information System (INIS)

Prasad, Ravikant; Gaur, Anurag; Siwach, P K; Varma, G D; Kaur, A; Singh, H K

2007-01-01

We have investigated the effect of large in-plane compressive strain on the electrical transport in La 0.88 Sr 0.12 MnO 3 in thin films. For achieving large compressive strain, films have been deposited on single crystal LaAlO 3 (LAO, a = 3.798 A) substrate from a polycrystalline bulk target having average in-plane lattice parameter a av = (a b + b b )/2 = 3.925 A. The compressive strain was further relaxed by varying the film thickness in the range ∼6-75 nm. In the film having least thickness (∼6 nm) large increase (c = 3.929 A) in the out-of-plane lattice parameter is observed which gradually decreases towards the bulk value (c bulk = 3.87 A) for ∼75 nm thick film. This shows that the film having the least thickness is under large compressive strain, which partially relaxes with increasing film thickness. The T IM of the bulk target ∼145 K goes up to ∼235 K for the ∼6 nm thin film and even for partially strain relaxed ∼75 nm thick film T IM is as high as ∼200 K. This enhancement in T IM is explained in terms of suppression of Jahn-Teller distortion of the MnO 6 octahedra by the large in-plane compressive strain. We observe a large enhancement in the low field magnetoresistance (MR) just below T IM in the films having partial strain relaxation. Thick films of 6 and 20 nm have MR ∼14% at 3 kOe that almost doubles in 35 nm film to ∼27%. Similar enhancement is also obtained in the case of the temperature coefficient of resistivity. The near doubling of low field MR is explained in terms of delocalization of weakly localized carriers around T IM by small magnetic fields

Magnetic field dependence of the current flowing in the spin-coated chlorophyll thin films

Science.gov (United States)

Aji, J. R. P.; Kusumandari; Purnama, B.

2018-03-01

The magnetic dependence of the current flowing in the spin coated chlorophyll films on a patterned Cu PCB substrate has been presented. Chlorophyll was isolated from Spirulina sp and deposited by spin coated methods. The reducing of current by the change of magnetic field (magneto conductance effect) was performed by inducing the magnetic field parallel to the inplane of film at room temp. The magnetoconductance ratio decreases as the increase of voltage. It was indicated that the origin of carrier charge in chlorophyll films should be different with the carrier charge injection (electron).

Investigation of film flow of a conducting fluid in a transverse magnetic field, (1)

International Nuclear Information System (INIS)

Oshima, Shuzo; Yamane, Ryuichiro; Mochimaru, Yoshihiro; Sudo, Kouzo.

1985-01-01

Accompanying the development of large electromagnetic pumps transporting liquid metals used as the heat transfer media for nuclear power plants and the electromagnetic flow meters of large capacity, many researches have been carried out on the flow of liquid metals under the action of magnetic field. The utilization of electromagnetic force for continuous casting facilities seems very effective for the total processes from refining to solidification. Hereafter, it will be a technologically important problem to clarify the behavior of electro-conductive fluid with free surface under the action of magnetic field concerning the non-contact control of the interface form of molten metals as well as the cooling problem in nuclear fusion reactors. In this study, first the flow phenomena of MHD liquid film flow in a magnetic field with intensity gradient was analytically examined, and the effect of magnetic field gradient exerted on liquid film thickness and liquid surface form was clarified. Next, the experiment using mercury was carried out. For liquid film flow, magnetic field gradient acted as a kind of non-contact weir. (Kako, I.)

Effects of electric and magnetic fields on fluorescence in electron donor and acceptor pairs of pyrene and N-methylphthalimide doped in a polymer film

Energy Technology Data Exchange (ETDEWEB)

Yoshizawa, Tomokazu [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Mizoguchi, Miwako [Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Iimori, Toshifumi [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Nakabayashi, Takakazu [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Ohta, Nobuhiro [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan)], E-mail: nohta@es.hokudai.ac.jp

2006-05-09

External electric-field-induced change in fluorescence spectra as well as in fluorescence decay has been measured for electron donor and acceptor pairs of pyrene (PY) and N-methylphthalimide (NMPI) doped in a polymer film. Field-induced quenching and field-induced shortening of lifetime are observed for fluorescence emitted from the locally excited (LE) state of PY, indicating that intermolecular electron transfer from the excited state of PY to NMPI is enhanced by an electric field in a polymer film. A simulation has been made for the field effect on decay profile of the LE fluorescence of PY. Exciplex fluorescence is also quenched by an electric field because of the field-induced decrease in the initial population of the fluorescent exciplex. Both in LE fluorescence of PY and in exciplex fluorescence, electric-field-induced quenching becomes less efficient in the presence of a magnetic field. The mechanism of the synergy effect of electric and magnetic fields on fluorescence has been discussed.

Effects of electric and magnetic fields on fluorescence in electron donor and acceptor pairs of pyrene and N-methylphthalimide doped in a polymer film

International Nuclear Information System (INIS)

Yoshizawa, Tomokazu; Mizoguchi, Miwako; Iimori, Toshifumi; Nakabayashi, Takakazu; Ohta, Nobuhiro

2006-01-01

External electric-field-induced change in fluorescence spectra as well as in fluorescence decay has been measured for electron donor and acceptor pairs of pyrene (PY) and N-methylphthalimide (NMPI) doped in a polymer film. Field-induced quenching and field-induced shortening of lifetime are observed for fluorescence emitted from the locally excited (LE) state of PY, indicating that intermolecular electron transfer from the excited state of PY to NMPI is enhanced by an electric field in a polymer film. A simulation has been made for the field effect on decay profile of the LE fluorescence of PY. Exciplex fluorescence is also quenched by an electric field because of the field-induced decrease in the initial population of the fluorescent exciplex. Both in LE fluorescence of PY and in exciplex fluorescence, electric-field-induced quenching becomes less efficient in the presence of a magnetic field. The mechanism of the synergy effect of electric and magnetic fields on fluorescence has been discussed

Stress impedance effects in flexible amorphous FeCoSiB magnetoelastic films

International Nuclear Information System (INIS)

Zhang Wanli; Peng Bin; Su Ding; Tang Rujun; Jiang Hongchuan

2008-01-01

Amorphous FeCoSiB films were deposited on the flexible polyimide substrates (Kapton type (VN)) by DC magnetron sputtering. Stress impedance (SI) effects of the flexible amorphous FeCoSiB magnetoelastic films were investigated in details. The results show that a large stress impedance effect can be observed in the flexible amorphous FeCoSiB magnetoelastic films. And the results also show a bias magnetic field plays an important role in the stress impedance of FeCoSiB films. Applied a bias magnetic field during depositing can induce obvious in-plane anisotropy in the FeCoSiB films, and a larger SI effect can be obtained with a stronger anisotropy in FeCoSiB films. Argon pressure has a significant effect on the SI effect of the FeCoSiB films. The SI of the FeCoSiB films reaches a maximum of 7.6% at argon pressure of 1.5 Pa, which can be explained by the change of residual stress in FeCoSiB films

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

Science.gov (United States)

Shijeesh, M. R.; Jayaraj, M. K.

2018-04-01

Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

Rapid ELISA Using a Film-Stack Reaction Field with Micropillar Arrays.

Science.gov (United States)

Suzuki, Yuma; Morioka, Kazuhiro; Ohata, Soichiro; Shimizu, Tetsuhide; Nakajima, Hizuru; Uchiyama, Katsumi; Yang, Ming

2017-07-11

A film-stack reaction field with a micropillar array using a motor stirrer was developed for the high sensitivity and rapid enzyme-linked immunosorbent assay (ELISA) reaction. The effects of the incubation time of a protein (30 s, 5 min, and 10 min) on the fluorescence intensity in ELISAs were investigated using a reaction field with different micropillar array dimensions (5-µm, 10-µm and 50-µm gaps between the micropillars). The difference in fluorescence intensity between the well with the reaction field of 50-µm gap for the incubation time of 30 s and the well without the reaction field with for incubation time of 10 min was 6%. The trend of the fluorescence intensity in the gap between the micro pillars in the film-stack reaction field was different between the short incubation time and the long incubation time. The theoretical analysis of the physical parameters related with the biomolecule transport indicated that the reaction efficiency defined in this study was the dominant factor determining the fluorescence intensity for the short incubation time, whereas the volumetric rate of the circulating flow through the space between films and the specific surface area were the dominant factors for the long incubation time.

Excellent field emission properties of vertically oriented CuO nanowire films

Directory of Open Access Journals (Sweden)

Long Feng

2018-04-01

Full Text Available Oriented CuO nanowire films were synthesized on a large scale using simple method of direct heating copper grids in air. The field emission properties of the sample can be enhanced by improving the aspect ratio of the nanowires just through a facile method of controlling the synthesis conditions. Although the density of the nanowires is large enough, the screen effect is not an important factor in this field emission process because few nanowires sticking out above the rest. Benefiting from the unique geometrical and structural features, the CuO nanowire samples show excellent field emission (FE properties. The FE measurements of CuO nanowire films illustrate that the sample synthesized at 500 °C for 8 h has a comparatively low turn-on field of 0.68 V/μm, a low threshold field of 1.1 V/μm, and a large field enhancement factor β of 16782 (a record high value for CuO nanostructures, to the best of our knowledge, indicating that the samples are promising candidates for field emission applications.

High mobility polymer gated organic field effect transistor using zinc ...

Indian Academy of Sciences (India)

Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

The role of electric field during spray deposition on fluorine doped tin oxide film

Energy Technology Data Exchange (ETDEWEB)

Kumar, Anuj, E-mail: anujkumarom@gmail.com; Swami, Sanjay Kumar; Dutta, Viresh

2014-03-05

Highlights: • Fluorine doped tin oxide deposition by spray technique. • The growth reaction of tin oxide, controlled by the electric field on the substrate surface. • Deposit on large scale substrate 10 cm × 10 cm by single nozzle. • Obtained good quality of thin film. -- Abstract: The fluorine doped tin oxide film has been deposited on 10 cm × 10 cm glass substrate by using spray technique with a voltage applied between the nozzle and an annular electrode placed 2 mm below the nozzle. The effect of the electric field thus created during the spray deposition on structural, optical and electrical properties of SnO{sub 2}:F (FTO) film was studied. X-ray diffraction pattern revealed the presence of cassiterite structure with (2 0 0) orientation for all the FTO film. SEM study revealed the formation of smooth and uniform surface FTO film under the electric field over the entire substrate area. The electrical measurements show that the film prepared under the electric field (for an applied voltage of 2000 V) had a resistivity ∼1.2 × 10{sup −3} Ω cm, carrier concentration ∼4.21 × 10{sup 20} cm{sup −3} and mobility ∼14.48 cm{sup 2} V{sup −1} s{sup −1}. The sprayed FTO film have the average transmission in the visible region of more than about 80%.

Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

Energy Technology Data Exchange (ETDEWEB)

Morley, Neil B. [Univ. of California, Los Angeles, CA (United States)

1994-01-01

Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along {rvec B}. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization.

Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field

International Nuclear Information System (INIS)

Morley, N.B.

1994-01-01

Liquid metal film protection of plasma-facing surfaces in fusion reactors is proposed in an effort to counter the adverse effects of high heat and particle fluxes from the burning plasma. Concerns still exist about establishing the required flow in presence of strong magnetic fields and plasma momentum flux typical of a reactor environment. In this work, the flow behavior of the film is examined under such conditions. Analysis of MHD equations as they apply to liquid metal flows with a free surface in the fully-developed limit was undertaken. Solution yields data for velocity profiles and uniform film heights vs key design parameters (channel size, magnetic field magnitude/orientation, channel slope, wall conductivity). These results are compared to previous models to determine accuracy of simplifying assumptions, in particular Hartmann averaging of films along rvec B. Effect of a plasma momentum flux on the thin films is also analyzed. The plasma momentum is strong enough in the cases examined to seriously upset the film, especially for lighter elements like Li. Ga performed much better and its possible use is bolstered by calculations. In an experiment in the MeGA-loop MHD facility, coplanar, wide film flow was found to be little affected by the magnetic field due to the elongated nature of the film. Both MHD drag and partial laminarization are observed, supporting the fully- developed film model predictions of the onset of MHD drag and duct flow estimations for flow laminarization

Measurement of full-field deformation induced by a dc electrical field in organic insulator films

Directory of Open Access Journals (Sweden)

Boudou L.

2010-06-01

Full Text Available Digital image correlation method (DIC using the correlation coefficient curve-fitting for full-field surface deformation measurements of organic insulator films is investigated in this work. First the validation of the technique was undertaken. The computer-generated speckle images and the measurement of coefficient of thermal expansion (CTE of aluminium are used to evaluate the measurement accuracy of the technique. In a second part the technique is applied to measure the mechanical deformation induced by electrical field application to organic insulators. For that Poly(ethylene naphthalene 2,6-dicarboxylate (PEN thin films were subjected to DC voltage stress and DIC provides the full-field induced deformations of the test films. The obtained results show that the DIC is a practical and robust tool for better comprehension of mechanical behaviour of the organic insulator films under electrical stress.

Glass microspheres covering film: first field evaluations

International Nuclear Information System (INIS)

Magnani, G.; Filippi, F.

2006-01-01

A trial was carried out to evaluate, in the North-Centre of Italy, the behaviour in field of a new plastic covering film, prepared with the inclusion of empty glass microspheres (Solex). The trial was conducted on tomato (Lycopersicon esculentum L.) and eggplant (Solanum melongena L.). The new film was compared to a covering film with the same optical (diffuse light) and constitutional (co-extruded three layers EVA-WPE) characteristics. Since the first results, the innovative film showed a better behaviour than the control one. It presented light and thermal conditions (lower temperature during the day and slightly higher temperature in the night, compared to the control film) that allowed a better growth and yield than the control film. The growth analysis of tomato showed that plants grown under glass microsphere film had an higher growth rate (dry weight/days) and thickness of leaves compared to the control one. The yield of tomato and eggplant presented an increase in plants cultivated under the innovative film, especially for number and weight of fruits. The commercial quality did not show any differences between the films, except for the flesh hardness of tomato: this could be explained with the fact that the glass microspheres film provides environmental conditions avoiding plant stress during some stages of its cycle [it

Magnetic field induced superconductor-insulator transitions for ultra-thin Bi films on the different underlayers

International Nuclear Information System (INIS)

Makise, K; Kawaguti, T; Shinozaki, B

2009-01-01

This work shows the experimental results of the superconductor-insulator (S-I) transition for ultra-thin Bi films in magnetic fields. The quench-condensed (q-c) Bi film onto insulating underlayers have been interpreted to be homogeneous. In contrast, the Bi film without underlayers has been regarded as a granular film. The electrical transport properties of ultra-thin metal films near the S-I transition depend on the structure of the film. In order to confirm the effect of the underlayer to the homogeneity of the superconducting films, we investigate the characteristics of S-I transitions of q-c nominally homogeneous Bi films on underlayers of two insulating materials, SiO, and Sb. Under almost the same deposition condition except for the material of underlayer, we prepared the Bi films by repeating the additional deposition and performed in-situ electrical measurement. It is found that the transport properties near the S-I transitions show the remarkable difference between two films on different underlayers. As for Bi films on SiO, it turned out that the temperature dependence of resistance per square R sq (T) of the field-tuned transition and the thickness-tuned transition shows similar behavior; it was a thermally activated form. On the other hand, the R sq (T) of Bi films on Sb for thickness-tuned S-I transition showed logarithmic temperature dependence, but that for field-tuned S-I transition showed a thermally activated form.

The optimum circular field size for dental radiography with intraoral films

NARCIS (Netherlands)

Straaten, F.J. van; Aken, J. van

Intraoral radiographs are often made with circular fields to irradiate the film, and in many instances these fields are much larger than the film. The feasibility of reducing a circular radiation field without increasing the probability of excessive cone cutting was evaluated clinically, and an

Electric field tuning of phase separation in manganite thin films

KAUST Repository

Lourembam, James; Wu, Jianchun; Ding, Junfeng; Lin, Weinan; Wu, Tao

2014-01-01

In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

Electric field tuning of phase separation in manganite thin films

KAUST Repository

Lourembam, James

2014-01-29

In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.

Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); Patil, Sandip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Kim, Tae-Gyu [Department of Nano System and Process Engineering, Pusan National University, 50 Cheonghak-ri, Samrangjin-eup, Miryang, Gyeongnam, Pusan 627-706 (Korea, Republic of); Yonekura, Daisuke [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan); More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Joag, Dilip S. [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.jp [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-josanjima-cho, Tokushima 770-8506 (Japan)

2011-01-01

Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B{sub 2}O{sub 3} concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B{sub 2}O{sub 3} concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/{mu}m, respectively. The field emission current stability investigated at the preset value of {approx}1 {mu}A is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

Excess hall effect in epitaxial YBCO film under moderate magnetic fields, approached by renormalized superconducting fluctuations model

International Nuclear Information System (INIS)

Puica, I.; Lang, W.; Goeb, W.; Sobolewski, R.

2002-01-01

Full text: Measurements of the Hall effect and the resistivity on precisely-patterned YBCO thin film in moderate magnetic fields B from 0.5 to 6 T oriented parallel to the crystallographic c axis reveal a sign reversal of the Hall coefficient for B < 3 T. The data are confronted with the full quantitative expressions given by the renormalized fluctuation model for the excess Hall conductivity. The model offers a satisfactory quantitative approach to the experimental results, for moderate fields and temperatures near the critical region, provided the inhomogeneity of the critical temperature distribution is also taken into account. For lower fields and temperatures, the adequacy of the model is altered by vortex pinning. (author)

Giant magnetoimpedance effect in sputtered single layered NiFe film and meander NiFe/Cu/NiFe film

International Nuclear Information System (INIS)

Chen, L.; Zhou, Y.; Lei, C.; Zhou, Z.M.; Ding, W.

2010-01-01

Giant magnetoimpedance (GMI) effect on NiFe thin film is very promising due to its application in developing the magnetic field sensors with highly sensitivity and low cost. In this paper, the single layered NiFe thin film and NiFe/Cu/NiFe thin film with a meander structure are prepared by the MEMS technology. The influences of sputtering parameters, film structure and conductor layer width on GMI effect in NiFe single layer and meander NiFe/Cu/NiFe film are investigated. Maximum of the GMI ratio in single layer and sandwich film is 5% and 64%, respectively. The results obtained are useful for developing the high-performance magnetic sensors based on NiFe thin film.

Field electron emission characteristics of chemical vapour deposition diamond films with controlled sp2 phase concentration

International Nuclear Information System (INIS)

Lu, X.; Yang, Q.; Xiao, C.; Hirose, A.

2008-01-01

Diamond films were synthesized in a microwave plasma-enhanced chemical vapour deposition reactor. The microstructure and surface morphology of deposited films were characterized by Raman spectroscope and scanning electron microscope. The sp 2 phase concentration in diamond films was varied and its effect on the field electron emission (FEE) properties was investigated. Diamond films deposited under higher methane concentration exhibit better FEE property including lower turn-on electric field and larger emission current. The predominating factor modifying the FEE property is presumed to be the increase of sp 2 phase concentration. The influence of bias voltage on the FEE property of diamond films is not monotonic. Postgrowth acid treatment reduces the sp 2 phase content in diamond films without changing diamond grain sizes. The corresponding FEE property was degraded

Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

International Nuclear Information System (INIS)

O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

2006-01-01

Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

Terahertz-field-induced photoluminescence of nanostructured gold films

DEFF Research Database (Denmark)

Iwaszczuk, Krzysztof; Malureanu, Radu; Zalkovskij, Maksim

2013-01-01

We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced at the pe......We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced...

Critical fields of niobium nitride films of various granularity

International Nuclear Information System (INIS)

Antonova, E.A.; Sukhov, V.A.

1983-01-01

The behaviour of lattice parameter, specific electrical resistivity, critical temperature, and temperature dependence of upper critical field near Tsub(cr) of sputtered niobium nitride films is investigated versus the substrate temperature and gas mixture composition in the process of reactive cathode sputtering. The relation between extrapolated value of the upper critical field and granularity of niobium nitride films, close as to composition to the stoichiometric one, has been found. Values of the kappa parameter of the Ginsburg-Landau theory and of the coherence length for niobium nitride films of various granularity are estimated in an approximation of uniform distribution of impurities in a sample

Control of Flowing Liquid Films By Electrostatic Fields in Space

Science.gov (United States)

Bankoff, S. George; Miksis, Michael J.; Kim, Hyo

1996-01-01

A novel type of lightweight space radiator has been proposed which employs internal electrostatic fields to stop coolant leaks from punctures caused by micrometeorites or space debris. Extensive calculations have indicated the feasibility of leak stoppage without film destabilization for both stationary and rotating designs. Solutions of the evolution equation for a liquid-metal film on an inclined plate, using lubrication theory for low Reynolds numbers, Karman-Pohlhausen quadratic velocity profiles for higher Reynolds numbers, and a direct numerical solution are shown. For verification an earth-based falling-film experiment on a precisely-vertical wall with controllable vacuum on either side of a small puncture is proposed. The pressure difference required to start and to stop the leak, in the presence and absence of a strong electric field, will be measured and compared with calculations. Various parameters, such as field strength, film Reynolds number, contact angle, and hole diameter will be examined. A theoretical analysis will be made of the case where the electrode is close enough to the film surface that the electric field equation and the surface dynamics equations are coupled. Preflight design calculations will be made in order to transfer the modified equipment to a flight experiment.

Quantum transition and decoherence of levitating polaron on helium film thickness under an electromagnetic field

Science.gov (United States)

Kenfack, S. C.; Fotue, A. J.; Fobasso, M. F. C.; Djomou, J.-R. D.; Tiotsop, M.; Ngouana, K. S. L.; Fai, L. C.

2017-12-01

We have studied the transition probability and decoherence time of levitating polaron in helium film thickness. By using a variational method of Pekar type, the ground and the first excited states of polaron are calculated above the liquid-helium film placed on the polar substrate. It is shown that the polaron transits from the ground to the excited state in the presence of an external electromagnetic field in the plane. We have seen that, in the helium film, the effects of the magnetic and electric fields on the polaron are opposite. It is also shown that the energy, transition probability and decoherence time of the polaron depend sensitively on the helium film thickness. We found that decoherence time decreases as a function of increasing electron-phonon coupling strength and the helium film thickness. It is seen that the film thickness can be considered as a new confinement in our system and can be adjusted in order to reduce decoherence.

Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga,Mn)As films at high temperatures

Science.gov (United States)

Wang, Hailong; Ma, Jialin; Yu, Xueze; Yu, Zhifeng; Zhao, Jianhua

2017-01-01

The electric-field effects on the magnetism in perpendicularly magnetized (Ga,Mn)As films at high temperatures have been investigated. An electric-field as high as 0.6 V nm-1 is applied by utilizing a solid-state dielectric Al2O3 film as a gate insulator. The coercive field, saturation magnetization and magnetic anisotropy have been clearly changed by the gate electric-field, which are detected via the anomalous Hall effect. In terms of the Curie temperature, a variation of about 3 K is observed as determined by the temperature derivative of the sheet resistance. In addition, electrical switching of the magnetization assisted by a fixed external magnetic field at 120 K is demonstrated, employing the gate-controlled coercive field. The above experimental results have been attributed to the gate voltage modulation of the hole density in (Ga,Mn)As films, since the ferromagnetism in (Ga,Mn)As is carrier-mediated. The limited modulation magnitude of magnetism is found to result from the strong charge screening effect introduced by the high hole concentration up to 1.10  ×  1021 cm-3, while the variation of the hole density is only about 1.16  ×  1020 cm-3.

Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

Energy Technology Data Exchange (ETDEWEB)

Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2015-09-30

Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

Improving the performance of nickel-coated fluorine-doped tin oxide thin films by magnetic-field-assisted laser annealing

Energy Technology Data Exchange (ETDEWEB)

Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing 225400 (China)

2015-10-01

Highlights: • Ni/FTO films were prepared by sputtering Ni layers on commercial FTO glass. • The as-prepared Ni/FTO films underwent magnetic-field-assisted laser annealing. • Magnetic field and laser fluence were crucial for improving quality of the films. • All Ni/FTO films displayed enhanced compactness after magnetic laser annealing. • Magnetic laser annealing using a fluence of 0.9 J/cm{sup 2} led to the best film quality. - Abstract: Nickel-coated fluorine-doped tin oxide (Ni/FTO) thin films were prepared by sputtering Ni layers on commercial FTO glass. The as-prepared Ni/FTO films underwent nanosecond pulsed laser annealing in an external magnetic field (0.4 T). The effects of the presence of magnetic field and laser fluence on surface morphology, crystal structure and photoelectric properties of the films were investigated. All the films displayed enhanced compactness after magnetic-field-assisted laser annealing. It was notable that both crystallinity and grain size of the films gradually increased with increasing laser fluence from 0.6 to 0.9 J/cm{sup 2}, and then decreased slightly with an increase in laser fluence to 1.1 J/cm{sup 2}. As a result, the film obtained by magnetic-field-assisted laser annealing using a fluence of 0.9 J/cm{sup 2} had the best overall photoelectric property with an average transmittance of 81.2%, a sheet resistance of 5.5 Ω/sq and a figure of merit of 2.27 × 10{sup −2} Ω{sup −1}, outperforming that of the film obtained by pure laser annealing using the same fluence.

Characterization of beta radiation fields using radiochromic films

International Nuclear Information System (INIS)

Benavente, Jhonny A.; Silva, Teogenes A. da

2011-01-01

The objective of this work was to study the response of radiochromic films for beta radiation fields in terms of absorbed dose. The reliability of the EBT model Gafchromic radiochromic film was studied. A 9800 XL model Microtek, transmission scanner, a 369 model X-Rite optical densitometer and a Mini 1240 Shimadzu UV spectrophotometer were used for measurement comparisons. Calibration of the three systems was done with irradiated samples of radiochromic films with 0.1; 0.3; 0.5; 0.8; 1.0; 1.5; 2.0; 2.5; 3.0; 3.5; 4.5 e 5.0 Gy in beta radiation field from a Sr-90/Y-90 source. Calibration was performed by establishing a correlation between the absorbed dose values and the corresponding radiochromic responses. Results showed significant differences in the absorbed dose values obtained with the three methods. Absorbed dose values showed errors from 0.6 to 4.4%, 0.3 to 31.8% and 0.2 to 47.3% for the Microtek scanner, the X-Rite Densitometer and the Shimadzu spectrophotometer, respectively. Due to the easy acquisition and use for absorbed dose measurements, the densitometer and the spectrophotometer showed to be suitable techniques to evaluate radiation dose in relatively homogeneous fields. In the case of inhomogeneous fields or for a two dimension mapping of radiation fields to identify anisotropies, the scanner technique is the most recommended. (author)

Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin films

International Nuclear Information System (INIS)

Shreekala, R.; Rajeswari, M.; Ghosh, K.; Goyal, A.; Gu, J.Y.; Kwon, C.; Trajanovic, Z.; Boettcher, T.; Greene, R.L.; Ramesh, R.; Venkatesan, T.

1997-01-01

We report our study of the effect of crystallinity on the magnetoresistance in epitaxial and polycrystalline La 2/3 Ba 1/3 MnO 3 and La 2/3 Ca 1/3 MnO 3 thin films. Magnetoresistance in epitaxial films exhibits field dependence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contrast to that of epitaxial films in which the magnetoresistance peaks close to the ferromagnetic transition temperature. The field dependence in the polycrystalline films is also remarkably different. At low fields, we observe a sharp drop in resistance followed by a more gradual decrease at higher fields. Our data suggest that in addition to the intrinsic magnetoresistance, grain-boundary transport contributes significantly to the magnetoresistance in polycrystalline films. copyright 1997 American Institute of Physics

Influence of the physical–chemical properties of polyaniline thin films on the final sensitivity of varied field effect sensors

Energy Technology Data Exchange (ETDEWEB)

Mello, Hugo José Nogueira Pedroza Dias, E-mail: hugodiasmello@usp.br; Heimfarth, Tobias; Mulato, Marcelo

2015-06-15

We investigated the use of electrodeposited polyaniline (PANI) thin sensing films in pH sensors. Two configurations of the Extended Gate Field Effect Transistor (EGFET) sensor were studied: the Single EGFET (S-EGFET) and the Instrumental Amplifier EGFET (IA-EGFET) setups. The films were analyzed in both systems and the sensitivity and linearity of each sensor were compared. Initial sensitivities (70–80 mV/pH) measured in the IA-EGFET were reduced due to polymer bulk protonation after a prior measurement in the S-EGFET system. Films with high amount of deposited polymer had their sensitivities least reduced. Bulk protonation occurred due to the step potential applied to the reference electrode in the S-EGFET system. These changes were also analyzed by scanning electron microscopy (SEM), visible reflectance spectroscopy and evaluation of CIE L*a*b* color scale. PANI pH EGFET sensors exhibited good linearity and stability that along with their high sensitivity, easy processing and low cost film production have large potential applications. - Highlights: • Electrodeposited polyaniline thin films were analyzed in two EGFET setups. • Polymer protonation provided changeable sensitivities. • Color and morphological variation confirm polymer aggregation and electrical changes.

Influence of the physical–chemical properties of polyaniline thin films on the final sensitivity of varied field effect sensors

International Nuclear Information System (INIS)

Mello, Hugo José Nogueira Pedroza Dias; Heimfarth, Tobias; Mulato, Marcelo

2015-01-01

We investigated the use of electrodeposited polyaniline (PANI) thin sensing films in pH sensors. Two configurations of the Extended Gate Field Effect Transistor (EGFET) sensor were studied: the Single EGFET (S-EGFET) and the Instrumental Amplifier EGFET (IA-EGFET) setups. The films were analyzed in both systems and the sensitivity and linearity of each sensor were compared. Initial sensitivities (70–80 mV/pH) measured in the IA-EGFET were reduced due to polymer bulk protonation after a prior measurement in the S-EGFET system. Films with high amount of deposited polymer had their sensitivities least reduced. Bulk protonation occurred due to the step potential applied to the reference electrode in the S-EGFET system. These changes were also analyzed by scanning electron microscopy (SEM), visible reflectance spectroscopy and evaluation of CIE L*a*b* color scale. PANI pH EGFET sensors exhibited good linearity and stability that along with their high sensitivity, easy processing and low cost film production have large potential applications. - Highlights: • Electrodeposited polyaniline thin films were analyzed in two EGFET setups. • Polymer protonation provided changeable sensitivities. • Color and morphological variation confirm polymer aggregation and electrical changes

Low-macroscopic field emission from silicon-incorporated diamond-like carbon film synthesized by dc PECVD

International Nuclear Information System (INIS)

Ahmed, Sk.F.; Mitra, M.K.; Chattopadhyay, K.K.

2007-01-01

Silicon-incorporated diamond-like carbon (Si-DLC) films were deposited via dc plasma-enhanced chemical vapor deposition (PECVD), on glass and alumina substrates at a substrate temperature 300 deg. C. The precursor gas used was acetylene and for Si incorporation, tetraethyl orthosilicate dissolved in methanol was used. Si atomic percentage in the films was varied from 0% to 19.3% as measured from energy-dispersive X-ray analysis (EDX). The binding energies of C 1s, Si 2s and Si 2p were determined from X-ray photoelectron spectroscopic studies. We have observed low-macroscopic field electron emission from Si-DLC thin films deposited on glass substrates. The emission properties have been studied for a fixed anode-sample separation of 80 μm for different Si atomic percentages in the films. The turn-on field was also found to vary from 16.19 to 3.61 V/μm for a fixed anode-sample separation of 80 μm with a variation of silicon atomic percentage in the films 0% to 19.3%. The turn-on field and approximate work function are calculated and we have tried to explain the emission mechanism there from. It was found that the turn-on field and effective emission barrier were reduced by Si incorporation than undoped DLC

[Molluscicidal effect of film on ditches in mountainous schistosomiasis endemic regions].

Science.gov (United States)

Zhu, Hong-Qing; Zhong, Bo; Zhang, Gui-Rong; Tang, Shu-Gui; Cao, Chun-Li; Zhang, Xu-Dong; Jia, Bin; Zhang, Yi; Li, Jian-Guo; Fu, Tao; Chen, Lin; Lu, Ding; Bao, Zi-Ping

2011-04-01

To evaluate the molluscicidal effect of film on ditches in mountainous schistosomiasis endemic regions. A ditch with Oncomelania hupensis snails was selected as experimental field. The ditch was divided into 3 parts (groups): a niclosamide plus film covering group (film covering after spraying by wettable powder of 50% niclosamide ethanolamine salt upon 2 g/m2), a film covering group (film covering directly without niclosamide spraying), and a control group (no molluscicidal measures). The snail investigation was performed 7, 10, 40, 60 d and 90 d after film covering. The temperatures outside and inside film were determined twice a day during the experiment. The temperature inside the film was significantly higher than that outside the film (t = 4.12, P film in the niclosamide plus film covering group and film covering group respectively; 96.58% and 93.06% ten days post-film respectively; both 100% forty days post-film. The multi-factor regression model indicated that covering film with niclosamide applying, extending film covering time, and increasing cumulate temperature inside film could enhance the molluscicidal effect. The film covering has well molluscicidal effect. The molluscicidal effect of covering film with niclosamide is better than that of covering film alone in short time. However, the covering film alone also has good molluscicidal effect when increasing covering time.

Field-angle dependence of magnetic resonance in Pt/NiFe films

International Nuclear Information System (INIS)

Inoue, H.Y.; Harii, K.; Saitoh, E.

2007-01-01

Ferromagnetic resonance in NiFe/ amorphous Pt bilayer thin films was investigated with changing the external field direction. The spectral width of the ferromagnetic resonance depends critically on the external-magnetic-field direction. We found that the sample dependence of the spectral width is enhanced with deviation of external field direction from the direction along the film plain, implying an important role of spin directions in field-induced spin-decoherence mechanism in Pt

Influence of standing-wave fields on the laser damage resistance of dielectric films

International Nuclear Information System (INIS)

Newnam, B.E.; Gill, D.H.; Faulkner, G.

1973-01-01

The influence of standing-wave electric fields on the damage resistance of dielectric thin films was evaluated for the case of 30-ps laser pulses at 1.06 μm. Single-layer films of TiO 2 , ZrO 2 , SiO 2 , and MgF 2 were deposited by state-of-the-art electron-gun evaporation on BK-7 glass substrates with uniform surface preparation. The film thicknesses ranged from one to five quarter-wave increments. The thresholds for TiO 2 films of odd quarter-wave thickness were greater than for even multiples which correlated well with the calculated internal maximum electric fields. Threshold variations for ZrO 2 films were apparent but not as distinctly periodic with film thickness. Negligible variations were obtained for SiO 2 films, again correlating with electric-field calculations. Results of additional tests allowed comparisons of thresholds for 1) back-and front-surface films for normal incidence; 2) S- and P-polarized radiation at an incidence angle of 60 0 ; and 3) circular and linear polarizations for normal incidence. The thresholds were compared with calculated standing-wave field patterns at various locations in the films. A correlation was generally found between the internal field maxima and the thresholds, but in a few coatings, defects apparently decreased or prevented any correlation. (auth)

High magnetic field properties of Fe-pnictide thin films

Energy Technology Data Exchange (ETDEWEB)

Kurth, Fritz

2015-11-20

The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing

Energy Technology Data Exchange (ETDEWEB)

St George, Tiffany [Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Department of Science, United States Coast Guard Academy, 27 Mohegan Ave., New London, CT 06320 (United States); Vlahos, Penny, E-mail: penny.vlahos@uconn.ed [Department of Chemistry, University of Connecticut, 55 Eagleville Road, Storrs, CT 06269 (United States); Department of Marine Science, University of Connecticut, 1080 Shennecossett Road, Groton, CT 06340 (United States); Harner, Tom [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada); Helm, Paul [Environmental Monitoring and Reporting Branch, Ontario Ministry of the Environment, 125 Resources Rd, Toronto, Ontario M9P 3V6 (Canada); Wilford, Bryony [Science and Technology Branch, Environment Canada, 4905 Dufferin Street, Toronto, Ontario M3H 5T4 (Canada)

2011-02-15

Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K{sub EVA-W} partition coefficients correlate well (r{sup 2} = 0.87) with Log K{sub OW} values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K{sub EVA-W} = 1.04 Log K{sub OW} + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. - Research highlights: Calibration and field testing of a thin-film passive sampler in marine systems. Ethylene vinyl acetate (EVA) is effective for a wide spectrum of organic compounds. EVA performs with high precision and reproducibility. EVA is effective in marine systems at environmentally relevant concentrations. EVA is recommended as a multi-media fugacity meter for environmental applications. - An ethylene vinyl acetate (EVA), thin-film passive sampler for the detection of organic compounds in marine environments is calibrated and field tested.

Effects of array arrangements in nano-patterned thin film media

International Nuclear Information System (INIS)

El-Hilo, M.

2010-01-01

In this work, the effect of different arrays arrangements on the magnetic behaviour of patterned thin film media is simulated. The modeled films consist of 80x80 cobalt grains of uniform diameter (20 nm) distributed into two different array arrangement: hexagonal (triangular) or square arrays. In addition to that, for each array arrangement, two cases of anisotropy orientations, random and textured films are considered. For both array arrangements and media orientations, hysteresis loops at different array separation (d) were simulated. Predictions show that for closely packed films, the shearing effects on the magnetization loop are much larger for the square array arrangement than the hexagonal one. According to these predictions, the bit switching field distribution in interacting 2D systems is much narrower for the hexagonal array arrangement. This result could be very important for high-density magnetic recording where a narrow bit switching field distribution is required.

Magnetic fields are causing small, but significant changes of the radiochromic EBT3 film response to 6 MV photons.

Science.gov (United States)

Delfs, Björn; Schoenfeld, Andreas A; Poppinga, Daniela; Kapsch, Ralf-Peter; Jiang, Ping; Harder, Dietrich; Poppe, Björn; Looe, Hui Khee

2018-01-31

The optical density (OD) of EBT3 radiochromic films (Ashland Specialty Ingredients, Bridgewater, NJ, USA) exposed to absorbed doses to water up to D  =  20 Gy in magnetic fields of B  =  0.35 and 1.42 T was measured in the three colour channels of an Epson Expression 10000XL flatbed scanner. A 7 cm wide water phantom with fixed film holder was placed between the pole shoes of a constant-current electromagnet with variable field strength and was irradiated by a 6 MV photon beam whose axis was directed at right angles with the field lines. The doses at the film position at water depth 5 cm were measured with a calibrated ionization chamber when the magnet was switched off and were converted to the doses in presence of the magnetic field via the monitor units and by a Monte Carlo-calculated correction accounting for the slight change of the depth dose curves in magnetic fields. In the presence of the 0.35 and 1.42 T fields small negative changes of the OD values at given absorbed doses to water occurred and just significantly exceeded the uncertainty margin given by the stochastic and the uncorrected systematic deviations. This change can be described by a  +2.1% change of the dose values needed to produce a given optical density in the presence of a 1.42 T field. The thereby modified OD versus D function remained unchanged irrespective of whether the original short film side-the preference direction of the monomer crystals of the film-was directed parallel or orthogonal to the magnetic field. The 'orientation effect', the difference between the optical densities measured in the 'portrait' or 'landscape' film positions on the scanner bed caused by the reflection of polarised light in the scanner's mirror system, remained unaltered after EBT3 film exposure in magnetic fields. An independent optical bench investigation of EBT3 films exposed to doses of 10 and 20 Gy at 0.35 and 1.42 T showed that the direction of the electric vector of polarised

Densification effects on solution-processed indium-gallium-zinc-oxide films and their thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Rim, You Seung; Kim, Hyun Jae [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

2014-09-15

We report the effects of high-pressure annealing (HPA) on solution-processed InGaZnO (IGZO) thin-film transistors (TFTs). HPA increased the density of IGZO films. In particular, annealing in O{sub 2} at 1.0 MPa and 350 C resulted in a high-density and low-porosity IGZO film, as characterized using X-ray reflectivity (XRR) and ellipsometry measurements. This was attributed to the oxidative and compressive effects on the oxygen-deficient solution-processed IGZO film. TFTs annealed in O{sub 2} at 1.0 MPa and 350 C exhibited an increase in the field-effect mobility by a factor of approximately five compared with TFTs annealed in air at 0.1 MPa and 350 C. Furthermore, improvements in reliability under negative and positive bias stresses were also observed following HPA. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Magnetic-field induced semimetal in topological crystalline insulator thin films

International Nuclear Information System (INIS)

Ezawa, Motohiko

2015-01-01

We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material

Magnetic-field induced semimetal in topological crystalline insulator thin films

Energy Technology Data Exchange (ETDEWEB)

Ezawa, Motohiko, E-mail: ezawa@ap.t.u-tokyo.ac.jp

2015-06-19

We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that the gap closes together with the emergence of a pair of gapless cones carrying opposite chirarities by applying in-plane magnetic field. A pair of gapless points have opposite vortex numbers. This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. We thus present an a magnetic-field induced semimetal–semiconductor transition in 2D material. This is a giant-magnetoresistance, where resistivity is controlled by magnetic field. Perpendicular electric field is found to shift the gapless points and also renormalize the Fermi velocity in the direction of the in-plane magnetic field. - Highlights: • The band structure of topological crystalline insulator thin films can be controlled by applying in-plane magnetic field. • At the gap closing magnetic field, a pair of gapless cones carrying opposite chirarities emerge. • A pair of gapless points have opposite vortex numbers. • This is a reminiscence of a pair of Weyl cones in 3D Weyl semimetal. • A magnetic-field induced semimetal–semiconductor transition occurs in 2D material.

Fabrication of field-effect transistor utilizing oriented thin film of octahexyl-substituted phthalocyanine and its electrical anisotropy based on columnar structure

Science.gov (United States)

Ohmori, Masashi; Nakatani, Mitsuhiro; Kajii, Hirotake; Miyamoto, Ayano; Yoneya, Makoto; Fujii, Akihiko; Ozaki, Masanori

2018-03-01

Field-effect transistors with molecularly oriented thin films of metal-free non-peripherally octahexyl-substituted phthalocyanine (C6PcH2), which characteristically form a columnar structure, have been fabricated, and the electrical anisotropy of C6PcH2 has been investigated. The molecularly oriented thin films of C6PcH2 were prepared by the bar-coating technique, and the uniform orientation in a large area and the surface roughness at a molecular level were observed by polarized spectroscopy and atomic force microscopy, respectively. The field effect mobilities parallel and perpendicular to the column axis of C6PcH2 were estimated to be (1.54 ± 0.24) × 10-2 and (2.10 ± 0.23) × 10-3 cm2 V-1 s-1, respectively. The electrical anisotropy based on the columnar structure has been discussed by taking the simulated results obtained by density functional theory calculation into consideration.

Graphene field-effect devices

Science.gov (United States)

Echtermeyer, T. J.; Lemme, M. C.; Bolten, J.; Baus, M.; Ramsteiner, M.; Kurz, H.

2007-09-01

In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs).

Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

International Nuclear Information System (INIS)

Todd, N. K.; Mathur, N. D.; Blamire, M. G.

2001-01-01

The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

Effect of Temperature and Electric Field on the Damping and Stiffness Characteristics of ER Fluid Short Squeeze Film Dampers

Directory of Open Access Journals (Sweden)

H. P. Jagadish

2013-01-01

Full Text Available Squeeze film dampers are novel rotor dynamic devices used to alleviate small amplitude, large force vibrations and are used in conjunction with antifriction bearings in aircraft jet engine bearings to provide external damping as these possess very little inherent damping. Electrorheological (ER fluids are controllable fluids in which the rheological properties of the fluid, particularly viscosity, can be controlled in accordance with the requirements of the rotor dynamic system by controlling the intensity of the applied electric field and this property can be utilized in squeeze film dampers, to provide variable stiffness and damping at a particular excitation frequency. The paper investigates the effect of temperature and electric field on the apparent viscosity and dynamic (stiffness and damping characteristics of ER fluid (suspension of diatomite in transformer oil using the available literature. These characteristics increase with the field as the viscosity increases with the field. However, these characteristics decrease with increase in temperature and shear strain rate as the viscosity of the fluid decreases with temperature and shear strain rate. The temperature is an important parameter as the aircraft jet engine rotors are located in a zone of high temperature gradients and the damper fluid is susceptible to large variations in temperature.

Specific feature of critical fields of inhomogeneous superconducting films

International Nuclear Information System (INIS)

Glazman, L.I.; Dmitrenko, I.M.; Kolin'ko, A.E.; Pokhila, A.S.; Fogel', N.Ya.; Cherkasova, V.G.

1988-01-01

Experimental studies on thin vanadium films (d=250-400 A) have revealed anomaly in the temperature dependence of the upper critical field H cparallel (T), when H is parallel to the sample plane. At certain temperature T 0 the dependence H cparallel 2 (T) has a sharp kink separating two linear portions. The anomalous behaviour of H cparallel (T) of thin V films can be accounted for assuming the film separation into two parallel layers having different parameters (critical temperature T c , coherence length ξ, thickness d). At temperatures above and lower T 0 the dependence H cparallel (T) is mainly dependent on the characteristics of only one layer. The kink in the dependence H cparallel 2 (T) is due to a jump-like transition of the superconducting nucleus from one layer to the other at T c . The anomalous behaviour of the dependence H cparallel (T) is also observed in sandwiches consisting of two identical films separated with a high (about 30 A) dielectric interlayer; however, the transition from one linear portion to the other is smooth. In the case of identical films a specific crossover occurs if at T-T c the critical field H cparallel (T) coinsides with that for the layer of doubled thickness, then at lowering temperature H cparallel (T) asymptotically approaches the critical field of one layer. The calculation within the model described provides a good description for the experimental results

Film-cooled turbine endwall in a transonic flow field; Filmgekuehlte Turbinenplattform in transsonischem Stroemungsfeld

Energy Technology Data Exchange (ETDEWEB)

Nicklas, M.

2000-11-01

Aero and thermodynamic measurements at the endwall of a turbine nozzle guide vane were carried out. These investigations are the first where the complete blade passage at the endwall in a transonic flow field is analysed for heat transfer and adiabatic film-cooling effectiveness. The aerodynamic measurements identify an intensive interaction between the coolant air and the secondary flow field. Similarly strong variations in heat transfer and film-cooling effectiveness were found. Analysis of the heat transfer measurements indicates that the heat transfer represents an indispensable tool for the evaluation of platform film-cooling design. On the basis of infrared temperature measurements, a procedure for accurate analysis of heat transfer and film-cooling effectiveness in a complex transonic flow field was developed. This measurement technique combines high accuracy with flexibility of application. These investigations have led to design improvements for film-cooling systems at the platform. (orig.) [German] Aero- und thermodynamische Messungen an einer Plattform eines Turbinenleitrads werden beschrieben. Erstmals wird in einem transsonischen Stroemungsfeld die komplette Seitenwand bezueglich des Waermeuebergangs und der adiabaten Filmkuehleffektivitaet untersucht. Die aerodynamischen Messungen zeigen eine intensive Wechselwirkung der Kuehlluft mit dem Sekundaerstroemungsfeld. Daraus resultierend treten starke Aenderungen des Waermeuebergangs und der Filmkuehleffektivitaet auf. Die Resultate der Waermeuebergangsmessungen zeigen, dass der Waermeuebergang eine wichtige Groesse fuer die Bewertung eines Filmkuehldesigns an einer Plattform darstellt. Ein Messverfahren auf der Grundlage von Infrarot-Temperaturmessungen fuer eine genaue Analyse des Waermeuebergangs und der Filmkuehleffektivitaet in den komplexen Verhaeltnissen einer transsonischen Stroemung wurde entwickelt. Mit der verwendeten Messtechnik wird eine hohe Genauigkeit bei der Ermittlung der quantitativen

The optimum circular field size for dental radiography with intraoral films

International Nuclear Information System (INIS)

van Straaten, F.J.; van Aken, J.

1982-01-01

Intraoral radiographs are often made with circular fields to irradiate the film, and in many instances these fields are much larger than the film. The feasibility of reducing a circular radiation field without increasing the probability of excessive cone cutting was evaluated clinically, and an optimum field size was determined. A circular radiation field 4.5 cm. at the tube end was found to minimize cone cutting and reduce the area of tissue irradiated by at least 44 percent. Findings suggest that current I.C.R.P. recommendations for a 6 to 7.5 cm. diameter circular field may be too liberal

Light field intensification induced by nanoinclusions in optical thin-films

International Nuclear Information System (INIS)

Zhu Zhiwu; Cheng Xiangai; Huang Liangjin; Liu Zejin

2012-01-01

Inclusions even in tens of nanometers scale (nanoinclusion) can cause electric field intensifications locally in an optical thin-film when irradiated by laser. It was modeled by using finite element analysis, and the dependences of local light field on complex refractive index, diameter and embedded depth of the nanoinclusion were simulated. In addition, the average light intensity inside the nanodefect was calculated as well as the energy deposition rate. The modeling results show that extinction coefficient of a nanoinclusion has more significant effects on local light field than real part of the refractive index. A light intensification as large as 4× can occur owing to a metallic nanoinclusion and the peaks of electric field distribution locating on the boundary of the particulate. Energy deposition rate, reflecting the behavior of laser induced damage to the thin-film, is found to have the highest value at a certain extinction coefficient, instead of the state that, for a defect, a higher extinction coefficient causes a higher speed of laser absorption. And when this coefficient is relatively small, the energy deposition rate grows linearly with it. Finally, regarding high absorptive nanoinclusions, the larger can induce stronger laser intensification and higher average of energy deposition rate, whereas no significant difference is made by low absorptive nanoinclusions of different sizes.

Harmonic generation effect in high-Tc films

International Nuclear Information System (INIS)

Khare, Neeraj; Shrivastava, S.K.; Padmanabhan, V.P.N.; Khare, Sangeeta; Gupta, A.K.

1997-01-01

Harmonic generation in thick BPSCCO and thin YBCO films are reported. The application of an ac field (H ac > H c1 ) of frequency f causes the generation of odd harmonics of frequency (2n+1)f. The application of dc field in addition to the ac field causes the appearance of even harmonics also in the BPSCCO film. However, the appearance of even harmonics is not observed in YBCO film with high J c ∼ 1.6x10 6 A/cm 2 and appearance of second harmonic with small magnitude is observed in YBCO film with low J c ∼ 2x10 3 A/cm 2 . The variation of amplitudes of these harmonics are studied as a function of magnitude of ac and dc field and the results are explained in the framework of critical state model. A high-T c film magnetometer based on the measurement of the amplitude of second harmonic has been developed whose field sensitivity is ∼ 1.5x10 -8 T. (author)

High magnetic field quantum transport in Au nanoparticle–cellulose films

International Nuclear Information System (INIS)

Turyanska, L; Makarovsky, O; Patanè, A; Kozlova, N V; Liu, Z; Li, M; Mann, S

2012-01-01

We report the magneto-transport properties of cellulose films comprising interconnected networks of gold nanoparticles (Au NPs). Cellulose is a biopolymer that can be made electrically conducting by cellulose regeneration in Au NP dispersions. The mechanism of electronic conduction in the Au–cellulose films changes from variable range hopping to metallic-like conduction with decreasing resistivity. Our experiments in high magnetic fields (up to 45 T) reveal negative magnetoresistance in the highly resistive films. This is attributed to the spin polarization of the Au NPs and the magnetic field induced suppression of electron spin flips during spin-polarized tunneling in the NP network. (paper)

Experiments and numerical modeling of fast flowing liquid metal thin films under spatially varying magnetic field conditions

Science.gov (United States)

Narula, Manmeet Singh

Innovative concepts using fast flowing thin films of liquid metals (like lithium) have been proposed for the protection of the divertor surface in magnetic fusion devices. However, concerns exist about the possibility of establishing the required flow of liquid metal thin films because of the presence of strong magnetic fields which can cause flow disrupting MHD effects. A plan is underway to design liquid lithium based divertor protection concepts for NSTX, a small spherical torus experiment at Princeton. Of these, a promising concept is the use of modularized fast flowing liquid lithium film zones, as the divertor (called the NSTX liquid surface module concept or NSTX LSM). The dynamic response of the liquid metal film flow in a spatially varying magnetic field configuration is still unknown and it is suspected that some unpredicted effects might be lurking. The primary goal of the research work being reported in this dissertation is to provide qualitative and quantitative information on the liquid metal film flow dynamics under spatially varying magnetic field conditions, typical of the divertor region of a magnetic fusion device. The liquid metal film flow dynamics have been studied through a synergic experimental and numerical modeling effort. The Magneto Thermofluid Omnibus Research (MTOR) facility at UCLA has been used to design several experiments to study the MHD interaction of liquid gallium films under a scaled NSTX outboard divertor magnetic field environment. A 3D multi-material, free surface MHD modeling capability is under development in collaboration with HyPerComp Inc., an SBIR vendor. This numerical code called HIMAG provides a unique capability to model the equations of incompressible MHD with a free surface. Some parts of this modeling capability have been developed in this research work, in the form of subroutines for HIMAG. Extensive code debugging and benchmarking exercise has also been carried out. Finally, HIMAG has been used to study the

Characterization of the effective electrostriction coefficients in ferroelectric thin films

Science.gov (United States)

Kholkin, A. L.; Akdogan, E. K.; Safari, A.; Chauvy, P.-F.; Setter, N.

2001-06-01

Electromechanical properties of a number of ferroelectric films including PbZrxTi1-xO3(PZT), 0.9PbMg1/3Nb2/3O3-0.1PbTiO3(PMN-PT), and SrBi2Ta2O9(SBT) are investigated using laser interferometry combined with conventional dielectric measurements. Effective electrostriction coefficients of the films, Qeff, are determined using a linearized electrostriction equation that couples longitudinal piezoelectric coefficient, d33, with the polarization and dielectric constant. It is shown that, in PZT films, electrostriction coefficients slightly increase with applied electric field, reflecting the weak contribution of non-180° domains to piezoelectric properties. In contrast, in PMN-PT and SBT films electrostriction coefficients are field independent, indicating the intrinsic nature of the piezoelectric response. The experimental values of Qeff are significantly smaller than those of corresponding bulk materials due to substrate clamping and possible size effects. Electrostriction coefficients of PZT layers are shown to depend strongly on the composition and preferred orientation of the grains. In particular, Qeff of (100) textured rhombohedral films (x=0.7) is significantly greater than that of (111) layers. Thus large anisotropy of the electrostrictive coefficients is responsible for recently observed large piezoelectric coefficients of (100) textured PZT films. Effective electrostriction coefficients obtained by laser interferometry allow evaluation of the electromechanical properties of ferroelectric films based solely on the dielectric parameters and thus are very useful in the design and fabrication of microsensors and microactuators.

Field emission mechanism from a single-layer ultra-thin semiconductor film cathode

International Nuclear Information System (INIS)

Duan Zhiqiang; Wang Ruzhi; Yuan Ruiyang; Yang Wei; Wang Bo; Yan Hui

2007-01-01

Field emission (FE) from a single-layer ultra-thin semiconductor film cathode (SUSC) on a metal substrate has been investigated theoretically. The self-consistent quantum FE model is developed by synthetically considering the energy band bending and electron scattering. As a typical example, we calculate the FE properties of ultra-thin AlN film with an adjustable film thickness from 1 to 10 nm. The calculated results show that the FE characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. Furthermore, a four-step FE mechanism is suggested such that the distinct FE current of a SUSC is rooted in the thickness sensitivity of its quantum structure, and the optimum FE properties of the SUSC should be attributed to the change in the effective potential combined with the attenuation of electron scattering

Structural and morphological modifications of the Co-thin films caused by magnetic field and pH variation

International Nuclear Information System (INIS)

Franczak, Agnieszka; Levesque, Alexandra; Bohr, Frederic; Douglade, Jacques; Chopart, Jean-Paul

2012-01-01

Highlights: ► Co electrodeposits were obtained at high electrolyte temperature under applied magnetic field. ► The temperature is commonly used in the industrial process. ► The effects of magnetic field up to 1 T and pH on structure and morphology were investigated. ► The high process temperature enhances HER which is diminishing by the magnetic field application. - Abstract: Cobalt films were deposited by use of the electrochemical process from a cobalt (II) sulfate solution on a titanium electrode and characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The experiments at electrolyte temperature of 50 °C were performed which is commonly used in the industrial process. The effects of pH and low uniform magnetic field up to 1 T on structure and morphology changes were investigated. The detected phase composition indicates the presence of both phases: hexagonal centered packed and face centered cubic independent on the pH value and the applied magnetic field amplitude. Calculation of the orientation index of Co phase shows the preferential orientation in the films obtained at higher pH. SEM micro-imagines have shown the nucleus shape transition from coarse-grained to needle-shaped dependent on the application of B-field as well as on the pH variation in the case of higher pH level. Co-films obtained from the electrolyte of low pH were characterized by the fine-grained morphology which was not modified by the influence of magnetic field. AFM images proved the effect on roughness of the Co-films which is closely related with the obtained morphology.

Use of an electric field in an electrostatic liquid film radiator.

Science.gov (United States)

Bankoff, S G; Griffing, E M; Schluter, R A

2002-10-01

Experimental and numerical work was performed to further the understanding of an electrostatic liquid film radiator (ELFR) that was originally proposed by Kim et al.(1) The ELFR design utilizes an electric field that exerts a normal force on the interface of a flowing film. The field lowers the pressure under the film in a space radiator and, thereby, prevents leakage through a puncture in the radiator wall. The flowing film is subject to the Taylor cone instability, whereby a cone of fluid forms underneath an electrode and sharpens until a jet of fluid is pulled toward the electrode and disintegrates into droplets. The critical potential for the instability is shown to be as much as an order of magnitude higher than that used in previous designs.(2) Furthermore, leak stoppage experiments indicate that the critical field is adequate to stop leaks in a working radiator.

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

International Nuclear Information System (INIS)

Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

2015-01-01

Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

Knife-edge thin film field emission cathodes

International Nuclear Information System (INIS)

Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

1993-01-01

Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

International Nuclear Information System (INIS)

Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji

2014-01-01

We report the electric-field modulation of magnetism of a hexagonal Cr 1-δ Te thin film. A gate voltage V G is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr 1-δ Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr 1-δ Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electric-field modulation of ferromagnetism in hexagonal chromium telluride thin film

Energy Technology Data Exchange (ETDEWEB)

Akiyama, Ryota; Oikawa, Haruyoshi; Yamawaki, Kazuma; Kuroda, Shinji [Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

2014-07-15

We report the electric-field modulation of magnetism of a hexagonal Cr{sub 1-δ}Te thin film. A gate voltage V{sub G} is ap-plied in the field effect capacitor (FEC) structure consisting of electric double-layer capacitor (EDLC) of an ion liquid and a 2nm-thick Cr{sub 1-δ}Te layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M-H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in-plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric-field modulation is discussed in relation to the Cr vacancies in the Cr{sub 1-δ}Te layer. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electric field effect on the critical current of SNS-contact

International Nuclear Information System (INIS)

Rakhmanov, A.L.; Rozhkov, A.V.

1995-01-01

Electric field effect on the SNS-contact critical current is investigated in the Ginzburg-Landau theory approximation. It is shown that the electric field may cause a notable increase of the contact critical current especially if the sample temperature is close to the temperature of a superconducting transition of T sc normal layer. Electric field effect is increased with the reduction of film thickness, but it can strong enough for thick films as well at temperature close to T sc . 11 refs.; 4 figs

The phase diagrams of a ferromagnetic thin film in a random magnetic field

Energy Technology Data Exchange (ETDEWEB)

Zaim, N.; Zaim, A., E-mail: ah_zaim@yahoo.fr; Kerouad, M., E-mail: m.kerouad@fs-umi.ac.ma

2016-10-07

In this paper, the magnetic properties and the phase diagrams of a ferromagnetic thin film with a thickness N in a random magnetic field (RMF) are investigated by using the Monte Carlo simulation technique based on the Metropolis algorithm. The effects of the RMF and the surface exchange interaction on the critical behavior are studied. A variety of multicritical points such as tricritical points, isolated critical points, and triple points are obtained. It is also found that the double reentrant phenomenon can appear for appropriate values of the system parameters. - Highlights: • Phase diagrams of a ferromagnetic thin film are examined by the Monte Carlo simulation. • The effect of the random magnetic field on the magnetic properties is studied. • Different types of the phase diagrams are obtained. • The dependence of the magnetization and susceptibility on the temperature are investigated.

Formation of CdS thin films in a chemical bath environment under the action of an external magnetic field

International Nuclear Information System (INIS)

Vaskes-Luna, Kh.G.; Zekhe, A.; Nhukhil'o-Garsiya, M.P.; Starostenko, O.

2000-01-01

The effect of external magnetic field on obtaining thin CdS films on glass sub layers through the method of chemical deposition from the cadmium chloride aqueous solution is studied. The intensity and direction of the magnetic field during deposition obviously affect the number of physical properties of polycrystalline films: thickness, grain size and optical quality. The films characteristics are studied through an atomic-power microscope, light absorption spectroscopy and conductometry in darkness. The results obtained are interpreted on the basis of notions on the cadmium and sulfur specific interaction in the chemical bath with a magnetic field [ru

Fabrication of highly ordered nanoporous alumina films by stable high-field anodization

International Nuclear Information System (INIS)

Li Yanbo; Zheng Maojun; Ma Li; Shen Wenzhong

2006-01-01

Stable high-field anodization (1500-4000 A m -2 ) for the fabrication of highly ordered porous anodic alumina films has been realized in a H 3 PO 4 -H 2 O-C 2 H 5 OH system. By maintaining the self-ordering voltage and adjusting the anodizing current density, high-quality self-ordered alumina films with a controllable inter-pore distance over a large range are achieved. The high anodizing current densities lead to high-speed film growth (4-10 μm min -1 ). The inter-pore distance is not solely dependent on the anodizing voltage, but is also influenced by the anodizing current density. This approach is simple and cost-effective, and is of great value for applications in diverse areas of nanotechnology

Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

Science.gov (United States)

Guiffard, B.; Seveno, R.

2015-01-01

In this study, we report the magnetically induced electric field E 3 in Pb(Zr0.57Ti0.43)O3 (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B ac at 45 kHz) and static magnetic induction ( B dc) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B dc——is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B ac and B dc induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E 3 versus B dc could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of under B dc = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems.

Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

International Nuclear Information System (INIS)

Saravanan, A.; Huang, B. R.; Sankaran, K. J.; Tai, N. H.; Dong, C. L.; Lin, I. N.

2015-01-01

The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E 0  = 2.6 V/μm and large EFE current density of J e  = 3.2 mA/cm 2 (at 5.3 V/μm)

Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

Energy Technology Data Exchange (ETDEWEB)

Patil, Sandip S. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan); Dhole, Sanjay D. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.i [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.j [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan)

2011-04-15

The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of {approx}1x10{sup -8} mbar. The values of the threshold field, required to draw an emission current density of {approx}1 {mu}A/cm{sup 2}, are found to be {approx}0.52, 1.9, 1.3 and 0.8 V/{mu}m for untreated, irradiated with fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

Science.gov (United States)

Ning, Shuai; Zhan, Peng; Wang, Wei-Peng; Li, Zheng-Cao; Zhang, Zheng-Jun

2014-12-01

Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ~ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ~ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

International Nuclear Information System (INIS)

Yurchuk, Ekaterina

2015-01-01

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Magnetic field effects in hybrid perovskite devices

Science.gov (United States)

Zhang, C.; Sun, D.; Sheng, C.-X.; Zhai, Y. X.; Mielczarek, K.; Zakhidov, A.; Vardeny, Z. V.

2015-05-01

Magnetic field effects have been a successful tool for studying carrier dynamics in organic semiconductors as the weak spin-orbit coupling in these materials gives rise to long spin relaxation times. As the spin-orbit coupling is strong in organic-inorganic hybrid perovskites, which are promising materials for photovoltaic and light-emitting applications, magnetic field effects are expected to be negligible in these optoelectronic devices. We measured significant magneto-photocurrent, magneto-electroluminescence and magneto-photoluminescence responses in hybrid perovskite devices and thin films, where the amplitude and shape are correlated to each other through the electron-hole lifetime, which depends on the perovskite film morphology. We attribute these responses to magnetic-field-induced spin-mixing of the photogenerated electron-hole pairs with different g-factors--the Δg model. We validate this model by measuring large Δg (~ 0.65) using field-induced circularly polarized photoluminescence, and electron-hole pair lifetime using picosecond pump-probe spectroscopy.

Dependence of electrical property on the applied magnetic fields in spin coated Fe(III)-Phorphyrin films

International Nuclear Information System (INIS)

Utari; Kusumandari; Purnama, B.; Mudasir; Abraha, K.

2016-01-01

We report here on the experimental results of the effect of external magnetic field on the current flow in plane surface of Fe(III)-porphyrin thin layer. The deposition of the Fe(III)- porphyrin thin layer was done by spin coating method. The I-V characteristics of film were measured by means of two point probes. The sample of layer number N = 4 was used to evaluate the magnetic effect on the electrical currents. The ohmic characteristics of the I-V film measurement were obtained. The current decreases when magnetic field is applied to the system and saturated current is obtained at a given magnetic field. Here, the decrease in the current can be attributed to the recombination of carrier charge under the magnetic field. In addition, the magnitude of the saturated current is found to increase with the increase in the voltage used. (paper)

Mesoscale control of organic crystalline thin films: effects of film morphology on the performance of organic transistors

Energy Technology Data Exchange (ETDEWEB)

Kim, Jaekyun; Park, Sungkyu [Chung-Ang University, Seoul (Korea, Republic of); Kim, Yonghoon [Sungkyunkwan University, Suwon (Korea, Republic of)

2014-08-15

We report mesoscale control of small molecular 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) crystalline thin films by varying the solute concentration in the fluidic channel method. A stepwise increase in the TIPS-pentacene concentration in the solution enabled us to prepare highly-crystallized ribbons, thin films, and thick films in a mesoscale range, respectively. All three types of deposited films exhibited an in-plane crystalline nature of (001) direction being normal to the substrate as well as crystalline domain growth parallel to the direction of the receding meniscus inside the fluidic channel. In addition, the film's morphology and thickness were found to have a great influence on the field-effect mobility of the transistors, and the highest average and maximum mobilities were achieved from transistors with thin-film semiconductor channels.

Electric-field-induced monoclinic phase in (Ba,Sr)TiO3 thin film

International Nuclear Information System (INIS)

Anokhin, A. S.; Yuzyuk, Yu. I.; Golovko, Yu. I.; Mukhortov, V. M.; El Marssi, M.

2011-01-01

We have studied electric-field-induced symmetry lowering in the tetragonal (001)-oriented heteroepitaxial (Ba 0.8 Sr 0.2 )TiO 3 thin film deposited on (001)MgO substrate. Polarized micro-Raman spectra were recorded from the film area in between two planar electrodes deposited on the film surface. Presence of c domains with polarization normal to the substrate was confirmed from polarized Raman study under zero field, while splitting and hardening of the E(TO) soft mode and polarization changes in the Raman spectra suggest monoclinic symmetry under external electric field.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

Science.gov (United States)

Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

2014-12-24

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

Jc enhancement by La-Al-O doping in Y-Ba-Cu-O films both in self-field and under magnetic field

DEFF Research Database (Denmark)

Xu, Yan; Suo, Hong-Li; Yue, Zhao

2016-01-01

a good epitaxial growth relationship with LAO. Compared with a pure YBCO film, the Jc value of a 5.0% LAO-doped sample is enhanced more than three times in self-field 77 K and seven times at 77 K and 1.5 T, respectively. These results indicate that LAO doping can effectively enhance the Jc of YBCO films...... toward YBCO. A series of YBCO films with different LAO doping contents was fabricated on LAO single-crystal substrates by metal organic deposition. We observed by X-ray diffractometer measurements and scanning electron microscopy observations that although a large amount of LAO is added, YBCO still keeps...

The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

Science.gov (United States)

Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

2018-05-01

We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

International Nuclear Information System (INIS)

Ning Shuai; Zhan Peng; Wang Wei-Peng; Li Zheng-Cao; Zhang Zheng-Jun

2014-01-01

Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ∼ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ∼ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films

International Nuclear Information System (INIS)

Xia Yidong; Cheng Jinbo; Pan Bai; Wu Di; Meng Xiangkang; Liu Zhiguo

2005-01-01

The impact of postannealing in electric field on the structure, tunability, and dielectric behavior of rf magnetron sputtering derived (Ba,Sr)TiO 3 films has been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability remarkably and destroy the symmetry of capacitance-voltage characteristics of the films. The increased out-of-plane lattice constant and the appearance of the hysteresis loops in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti 3+ ions caused by electric annealing could induce the formation of BaTiO 3 -like regions, which are ferroelectric at room temperature

Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films

Science.gov (United States)

Xia, Yidong; Cheng, Jinbo; Pan, Bai; Wu, Di; Meng, Xiangkang; Liu, Zhiguo

2005-08-01

The impact of postannealing in electric field on the structure, tunability, and dielectric behavior of rf magnetron sputtering derived (Ba,Sr)TiO3 films has been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability remarkably and destroy the symmetry of capacitance-voltage characteristics of the films. The increased out-of-plane lattice constant and the appearance of the hysteresis loops in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti3+ ions caused by electric annealing could induce the formation of BaTiO3-like regions, which are ferroelectric at room temperature.

Experimental study on flow characteristics of a vertically falling film flow of liquid metal NaK in a transverse magnetic field

International Nuclear Information System (INIS)

Li Fengchen; Serizawa, Akimi

2004-01-01

Experimental study was carried out on the characteristics of a vertically falling film flow of liquid metal sodium-potassium alloy (NaK-78) in a vertical square duct in the presence of a transverse magnetic field. The magnitude of the applied magnetic field was up to 0.7 T. The Reynolds number, defined by the hydraulic diameter based on the wetted perimeter length and the liquid average velocity, ranged from 8.0x10 3 to 3.0x10 4 . The free surfaces of the falling film flows in both a stainless steel and an acrylic resin channels were visualized. The instantaneous film thickness of the falling film flow in the acrylic resin channel was then measured by means of the ultrasonic transmission technique. Magnetohydrodynamic (MHD) effects on the characteristics of the falling film flow were investigated by the visualization and the statistical analysis of the measured film thickness. It was found that the falling liquid NaK film was thickened and the flow was stabilized remarkably by a strong transverse magnetic field. A bifurcation of the film was recovered by the applied magnetic field. The turbulence of the flow was substantially suppressed

Plastic-Film Mulching for Enhanced Water-Use Efficiency and Economic Returns from Maize Fields in Semiarid China

OpenAIRE

Zhang, Peng; Wei, Ting; Cai, Tie; Ali, Shahzad; Han, Qingfang; Ren, Xiaolong; Jia, Zhikuan

2017-01-01

Film mulch has gradually been popularized to increase water availability to crops for improving and stabilizing agricultural production in the semiarid areas of Northwest China. To find more sustainable and economic film mulch methods for alleviating drought stress in semiarid region, it is necessary to test optimum planting methods in same cultivation conditions. A field experiment was conducted during 2013 and 2014 to evaluate the effects of different plastic film mulch methods on soil wate...

Field Experiments on SAR Detection of Film Slicks

Science.gov (United States)

Ermakov, S.; da Silva, J. C. B.; Kapustin, I.; Sergievskaya, I.

2013-03-01

Field experiments on radar detection of film slicks using satellite synthetic aperture radar TerraSAR-X and X-band scatterometer on board a research vessel are described. The experiments were carried out with surfactant films with known physical parameters, the surface tension and the film elasticity, at low to moderate wind conditions and at different radar incidence angles. It is shown that the depression of radar backscatter (contrast) in films slicks for X-band SAR weakly depends on wind velocity/direction, film elasticity and incidence angles within the range of 200-400. Scatterometer contrasts obtained at incidence angles of about 600 are larger than SAR contrasts. Theoretical analysis of radar contrasts for low-to-moderate incidence angles has been carried out based on a hydrodynamic model of wind wave damping due to films and on a composite radar imaging model. The hydrodynamic model takes into account wave damping due to viscoelastic films, wind wave generation and a phenomenological term describing nonlinear limitation of the wind wave spectrum. The radar model takes into account Bragg scattering and specular scattering mechanisms, the latter is usually negligible compared to the Bragg mechanism at moderate incidence angles (larger than 30-35 degrees), but gives noticeable contribution to radar backscattering at smaller incidence angles particularly for slick areas when cm-scale ripples are strongly depressed by films. Calculated radar contrasts in slicks are compared with experiments and it is concluded that development of the model is needed to predict quantitatively observations.

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

Science.gov (United States)

Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

2018-04-25

In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

Magnetic after-effect in manganite films

International Nuclear Information System (INIS)

Sirena, M.; Steren, L.B.; Guimpel, J.

2001-01-01

The time dependence of the magnetic and transport properties on La 0.6 Sr 0.4 MnO 3 films and bulk samples has been studied through magnetization and resistivity measurements. A magnetic after-effect has been observed in all samples. At low temperatures, the low-field magnetization, can be described by the function M(t)=M c +M d exp(-t/τ)+S(H,T)ln(t). The resistivity increases logarithmically in the same temperature range, indicating the evolution of the sample to a more disordered state. Above a characteristic temperature, this behaviour is reversed and an increase of the magnetization with time is observed. The relaxation parameters depend on the bulk or films character of the samples. In the latter case, a dependence on the film thickness was found. A direct correlation between the time dependence of the resistivity and magnetization curves in manganite compounds was found

Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields

Directory of Open Access Journals (Sweden)

Andrei E. Surdu

2011-12-01

Full Text Available The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (Jc from the magnetization hysteresis (M–H curves for both sets of samples and found that the Jc value of FeO-coated films is higher at all fields and temperatures than the Jc value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.

Pulsed laser deposition of oxide gate dielectrics for pentacene organic field-effect transistors

International Nuclear Information System (INIS)

Yaginuma, S.; Yamaguchi, J.; Itaka, K.; Koinuma, H.

2005-01-01

We have fabricated Al 2 O 3 , LaAlO 3 (LAO), CaHfO 3 (CHO) and CaZrO 3 (CZO) thin films for the dielectric layers of field-effect transistors (FETs) by pulsed laser deposition (PLD). The films exhibited very smooth surfaces with root-mean-squares (rms) roughnesses of ∼1.3 A as evaluated by using atomic force microscopy (AFM). The breakdown electric fields of Al 2 O 3 , LAO, CHO and CZO films were 7, 6, 10 and 2 MV/cm, respectively. The magnitude of the leak current in each film was low enough to operate FET. We performed a comparative study of pentacene FET fabricated using these oxide dielectrics as gate insulators. High field-effect mobility of 1.4 cm 2 /V s and on/off current ratio of 10 7 were obtained in the pentacene FET using LAO gate insulating film. Use of the LAO films as gate dielectrics has been found to suppress the hysteresis of pentacene FET operations. The LAO films are relevant to the dielectric layer of organic FETs

External Electric Field Effects on Excited-State Intramolecular Proton Transfer in 4'-N,N-Dimethylamino-3-hydroxyflavone in Poly(methyl methacrylate) Films.

Science.gov (United States)

Furukawa, Kazuki; Hino, Kazuyuki; Yamamoto, Norifumi; Awasthi, Kamlesh; Nakabayashi, Takakazu; Ohta, Nobuhiro; Sekiya, Hiroshi

2015-09-17

The external electric field effects on the steady-state electronic spectra and excited-state dynamics were investigated for 4'-N,N-(dimethylamino)-3-hydroxyflavone (DMHF) in a poly(methyl methacrylate) (PMMA) film. In the steady-state spectrum, dual emission was observed from the excited states of the normal (N*) and tautomer (T*) forms. Application of an external electric field of 1.0 MV·cm(-1) enhanced the N* emission and reduced the T* emission, indicating that the external electric field suppressed the excited-state intramolecular proton transfer (ESIPT). The fluorescence decay profiles were measured for the N* and T* forms. The change in the emission intensity ratio N*/T* induced by the external electric field is dominated by ESIPT from the Franck-Condon excited state of the N* form and vibrational cooling in potential wells of the N* and T* forms occurring within tens of picoseconds. Three manifolds of fluorescent states were identified for both the N* and T* forms. The excited-state dynamics of DMHF in PMMA films has been found to be very different from that in solution due to intermolecular interactions in a rigid environment.

Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Electric and magnetic fields effects on the transport properties of La0.5Ca0.5MnO3 thin films

International Nuclear Information System (INIS)

Villafuerte, M.; Duhalde, S.; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L.

2004-01-01

The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La 0.5 Ca 0.5 MnO 3 thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported

Drying Temperature Dependence of Sol-gel Spin Coated Bilayer Composite ZnO/TiO2 Thin Films for Extended Gate Field Effect Transistor pH Sensor

Science.gov (United States)

Rahman, R. A.; Zulkefle, M. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

2018-03-01

This study presents an investigation on zinc oxide (ZnO) and titanium dioxide (TiO2) bilayer film applied as the sensing membrane for extended-gate field effect transistor (EGFET) for pH sensing application. The influences of the drying temperatures on the pH sensing capability of ZnO/TiO2 were investigated. The sensing performance of the thin films were measured by connecting the thin film to a commercial MOSFET to form the extended gates. By varying the drying temperature, we found that the ZnO/TiO2 thin film dried at 150°C gave the highest sensitivity compared to other drying conditions, with the sensitivity value of 48.80 mV/pH.

Aspects of 'low field' magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

International Nuclear Information System (INIS)

Moran, O.; Saldarriaga, W.; Baca, E.

2007-01-01

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO 3 were grown on an (001) SrTiO 3 (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (001) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [100] S and [001] S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [001]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ 0 H=9T; T)-ρ( μ 0 H=0T; T)]/ρ( μ 0 H=0T; T) on the order of a few percent, with maximums of ∼6% and ∼4% (right at the Curie temperature, T C ∼160K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T 3 films grown on 2 o miscut (001) STO substrates with the current parallel to the field and parallel to the [1-bar11] direction, which was identified as the easier axis for magnetization

Magnetic fields are causing small, but significant changes of the radiochromic EBT3 film response to 6 MV photons

Science.gov (United States)

Delfs, Björn; Schoenfeld, Andreas A.; Poppinga, Daniela; Kapsch, Ralf-Peter; Jiang, Ping; Harder, Dietrich; Poppe, Björn; Khee Looe, Hui

2018-02-01

vector of polarised light experiencing the largest transmission through EBT3 films remained unaltered after film exposure in the magnetic fields. The observed small modification of the OD versus D curve of the radiochromic film EBT3 in the range up to 20 Gy and 1.42 T, hardly exceeding the experimental uncertainty margin, numerically confirms other recent studies on EBT3 film. A stronger magnetic field effect had been observed with the previous product EBT2 exposed to 60Co gamma radiation at 0.35 T.

Electric field modulation of magnetic anisotropy and microwave absorption properties in Fe50Ni50/Teflon composite films

Directory of Open Access Journals (Sweden)

Zhenjun Xia

2016-05-01

Full Text Available Fe50Ni50 nanoparticle films with the size about 6 nm were deposited by a high energetic cluster deposition source. An electric field of about 0 - 40 kV was applied on the sample platform when the films were prepared. The field assisted deposition technique can dramatically induce in-plane magnetic anisotropy. To probe the microwave absorption properties, the Fe50Ni50 nanoparticles were deliberately deposited on the dielectric Teflon sheet. Then the laminated Fe50Ni50/Teflon composites were used to do reflection loss scan. The results prove that the application of electric field is an effective avenue to improve the GHz microwave absorption performance of our magnetic nanoparticles films expressed by the movement of reflection loss peak to high GHz region for the composites.

Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.

Science.gov (United States)

Park, Jeong Woo; Tak, Young Jun; Na, Jae Won; Lee, Heesoo; Kim, Won-Gi; Kim, Hyun Jae

2018-05-16

We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO films and oxygen atoms in air by SMFs or RMFs can be expected to enhance metal-oxide (M-O) bonds, even at low temperature (150 °C), through attraction of metal and oxygen atoms having their magnetic moments aligned in the same direction. Compared to IGZO TFTs with only thermal treatment at 300 °C, IGZO TFTs under an RMF (1150 rpm) at 150 °C show superior or comparable characteristics: field-effect mobility of 12.68 cm 2 V -1 s -1 , subthreshold swing of 0.37 V dec -1 , and on/off ratio of 1.86 × 10 8 . Although IGZO TFTs under an SMF (0 rpm) can be activated at 150 °C, the electrical performance is further improved in IGZO TFTs under an RMF (1150 rpm). These improvements of IGZO TFTs under an RMF (1150 rpm) are induced by increases in the number of M-O bonds due to enhancement of the magnetic interaction per unit time as the rpm value increases. We suggest that this new process of activating IGZO TFTs at low temperature widens the choice of substrates in flexible or transparent devices.

Parallel critical magnetic fields of superconducting hyperthin films of vanadium and technetium

International Nuclear Information System (INIS)

Teplov, A.A.; Mikheeva, M.N.

1980-01-01

The nature of limiting parallel magnetic fields Hsub(c parallel) destroying a superconducting state in films of vanadium and technetium is found out. A dependence of Hsub(c parallel) on the thickness of films up to d approximately 60 A is studied. The |dHsub(c parallel)sup(2)/dT|sub(Tsub(c)) derivative, which increases in the region of large d with the increase of 1/d and achieves the maximum va;ue at d approximately 100 A, was determined, using the experimental data. For the most thin films this derivative tends to drop (the value of the derivative changes from 16 up to 20.00 kOe 2 /k and for technetium and from 4 up to 2100 kOe 2 /k for vanadium). Such stop at |dHsub(c11)sup(2)/ dT|sub(Tsub(c)) growth during the decrease of d is not explained in the framework of the theory taking into account only orbital effects. An account of the additional paramagnetic effect (spin effects) leads to a good agreement of the experiment with the theory in the whole range of thicknesses for vanadium. For technetium films in the d range <=110 A the value of Hsub(c parallel) exceeds several times Hsub(c parallel) calculated with provision of spin effects. For d approximately 80 A and d approximately 55 A this increase achieves the triple value. This effect is explained qualitatively by the spin-orbital scattering appearing with the increase of the atomic number

Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Swensen, James S.; Wang, Liang (Frank); Rainbolt, James E.; Koech, Phillip K.; Polikarpov, Evgueni; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2012-12-01

We report a solution-processed approach for a p-type doped hole transport layer in organic light emitting devices (OLEDs). UV-vis-NIR absorption spectra identified the charge transfer between the donor and acceptor in the solution processed doped films. Single carrier device and field-effect transistor were utilized as test vehicles to study the charge transport property and extract important parameters such as bulk mobile carrier concentration and mobility. OLEDs with p-type doped hole transport layer showed significant improvement in power efficiency up to 30% at the optimal doping ratio. This approach has the great potential to reduce the power consumption for OLED solid state lighting while lowering the cost and boosting the throughput of its manufacturing.

Electron spin resonance study of the demagnetization fields of the ferromagnetic and paramagnetic films

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I.I. Gimazov, Yu.I. Talanov

2015-12-01

Full Text Available The results of the electron spin resonance study of the La1-xCaxMnO3 manganite and the diphenyl-picrylhydrazyl thin films for the magnetic field parallel and perpendicular to plane of the films are presented. The temperature dependence of the demagnetizing field is obtained. The parameters of the Curie-Weiss law are estimated for the paramagnetic thin film.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yurchuk, Ekaterina

2015-02-06

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Magnetic shield effect simulation of superconducting film shield covering directly coupled HTS dc-SQUID magnetometer

International Nuclear Information System (INIS)

Terauchi, N.; Noguchi, S.; Igarashi, H.

2011-01-01

A superconducting film shield over a SQUID ring improves the robustness of the SQUID with respect to magnetic noise. Supercurrent in the SQUID magnetometer and the superconducting film shield were simulated. The superconducting film shield reduces the influence of the external magnetic field on the SQUID ring. An HTS SQUID is a high sensitive magnetic sensor. In recent years, the HTS SQUID is widely used in various applications. In some applications, high robustness with respect to magnetic noise is required to realize stable operation at outside of a magnetic shielding room. The target of this paper is a directly coupled HTS dc-SQUID magnetometer. To enhance the robustness of the SQUID magnetometer, use of a superconducting thin film shield has been proposed. The magnetic field directly penetrating the SQUID ring causes the change of the critical current of Josephson junction, and then the SQUID magnetometer transitions into inoperative state. In order to confirm the magnetic shield effect of the superconducting film shield, electromagnetic field simulation with 3D edge finite element method was performed. To simulate the high temperature superconductor, E-J characteristics and c-axis anisotropy are considered. To evaluate the effect of the superconducting film shield, an external magnetic field which is supposed to be a magnetic noise is applied. From the simulation results, the time transition of the magnetic flux penetrating the SQUID ring is investigated and the effect of the superconducting film shield is confirmed. The amplitude of the magnetic flux penetrating the SQUID ring can be reduced to about one-sixth since the superconducting film shield prevents the magnetic noise from directly penetrating the SQUID ring.

Magnetic after-effect in manganite films

Energy Technology Data Exchange (ETDEWEB)

Sirena, M. E-mail: sirenam@ib.cnea.gov.ar; Steren, L.B.; Guimpel, J

2001-05-01

The time dependence of the magnetic and transport properties on La{sub 0.6}Sr{sub 0.4}MnO{sub 3} films and bulk samples has been studied through magnetization and resistivity measurements. A magnetic after-effect has been observed in all samples. At low temperatures, the low-field magnetization, can be described by the function M(t)=M{sub c}+M{sub d} exp(-t/{tau})+S(H,T)ln(t). The resistivity increases logarithmically in the same temperature range, indicating the evolution of the sample to a more disordered state. Above a characteristic temperature, this behaviour is reversed and an increase of the magnetization with time is observed. The relaxation parameters depend on the bulk or films character of the samples. In the latter case, a dependence on the film thickness was found. A direct correlation between the time dependence of the resistivity and magnetization curves in manganite compounds was found.

Characterization of beta radiation fields using radiochromic films; Caracterizacao de campos de radiacao beta utilizando filmes radiocromicos

Energy Technology Data Exchange (ETDEWEB)

Benavente, Jhonny A.; Silva, Teogenes A. da, E-mail: jabc@cdtn.b [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil). Programa de Pos-Graduacao em Ciencia e Tecnologia das Radiacoes, Minerais e Materiais; Meira-Belo, Luiz C.; Reynaldo, Sibele R. [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil)

2011-07-01

The objective of this work was to study the response of radiochromic films for beta radiation fields in terms of absorbed dose. The reliability of the EBT model Gafchromic radiochromic film was studied. A 9800 XL model Microtek, transmission scanner, a 369 model X-Rite optical densitometer and a Mini 1240 Shimadzu UV spectrophotometer were used for measurement comparisons. Calibration of the three systems was done with irradiated samples of radiochromic films with 0.1; 0.3; 0.5; 0.8; 1.0; 1.5; 2.0; 2.5; 3.0; 3.5; 4.5 e 5.0 Gy in beta radiation field from a Sr-90/Y-90 source. Calibration was performed by establishing a correlation between the absorbed dose values and the corresponding radiochromic responses. Results showed significant differences in the absorbed dose values obtained with the three methods. Absorbed dose values showed errors from 0.6 to 4.4%, 0.3 to 31.8% and 0.2 to 47.3% for the Microtek scanner, the X-Rite Densitometer and the Shimadzu spectrophotometer, respectively. Due to the easy acquisition and use for absorbed dose measurements, the densitometer and the spectrophotometer showed to be suitable techniques to evaluate radiation dose in relatively homogeneous fields. In the case of inhomogeneous fields or for a two dimension mapping of radiation fields to identify anisotropies, the scanner technique is the most recommended. (author)

Increased field-emission site density from regrown carbon nanotube films

International Nuclear Information System (INIS)

Wang, Y.Y.; Gupta, S.; Liang, M.; Nemanich, R.J.

2005-01-01

Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current-voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density (∼20 μA/cm 2 at 1 V/μm), while the regrown sample exhibited a significantly increased emission site density

Linear least-squares method for global luminescent oil film skin friction field analysis

Science.gov (United States)

Lee, Taekjin; Nonomura, Taku; Asai, Keisuke; Liu, Tianshu

2018-06-01

A data analysis method based on the linear least-squares (LLS) method was developed for the extraction of high-resolution skin friction fields from global luminescent oil film (GLOF) visualization images of a surface in an aerodynamic flow. In this method, the oil film thickness distribution and its spatiotemporal development are measured by detecting the luminescence intensity of the thin oil film. From the resulting set of GLOF images, the thin oil film equation is solved to obtain an ensemble-averaged (steady) skin friction field as an inverse problem. In this paper, the formulation of a discrete linear system of equations for the LLS method is described, and an error analysis is given to identify the main error sources and the relevant parameters. Simulations were conducted to evaluate the accuracy of the LLS method and the effects of the image patterns, image noise, and sample numbers on the results in comparison with the previous snapshot-solution-averaging (SSA) method. An experimental case is shown to enable the comparison of the results obtained using conventional oil flow visualization and those obtained using both the LLS and SSA methods. The overall results show that the LLS method is more reliable than the SSA method and the LLS method can yield a more detailed skin friction topology in an objective way.

Source/drain electrodes contact effect on the stability of bottom-contact pentacene field-effect transistors

Directory of Open Access Journals (Sweden)

Xinge Yu

2012-06-01

Full Text Available Bottom-contact pentacene field-effect transistors were fabricated with a PMMA dielectric layer, and the air stability of the transistors was investigated. To characterize the device stability, the field-effect transistors were exposed to ambient conditions for 30 days and subsequently characterized. The degradation of electrical performance was traced to study the variation of field-effect mobility, saturation current and off-state current. By investigating the morphology variance of the pentacene film at the channel and source/drain (S/D contact regions by atomic force microscopy, it was clear that the morphology of the pentacene film adhered to the S/D degenerated dramatically. Moreover, by studying the variation of contact resistance in detail, it was found that the S/D contact effect was the main reason for the degradation in performance.

Structural and morphological changes in P3HT thin film transistors applying an electric field

Energy Technology Data Exchange (ETDEWEB)

Tiwari, Deepak Kumar; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany); Flesch, Heinz; Resel, Roland [University of Siegen (Germany); Graz University of Technology (Austria)

2010-07-01

We report on electric field dependent crystalline structure and morphological changes of drop casting and spin coated poly(3-hexylthiophene) (P3HT) thin films. In order to probe the morphological changes induced by an applied electric field the samples were covered with thin source/drain electrodes separated by a small channel of 2 mm width. A series of x-ray reflectivity, X-ray grazing incidence out-of-plane and in-plane scans have been performed as function of the applied electric voltage. The (100) peak shows a decrease in intensity with increase of the applied electric field. This might be caused by Joule heating and the creation of current induced defects in the P3HT film. On other hand the (020) peak intensity shows much stronger changes with applied field. Considering the *-* stacking direction the measured effect can be directly related to a change in the electric transport. The observed changes in structure are reversible and the current-voltage cycle can be repeated several times. For X-ray reflectivity major changes have been found close to critical angle of total external reflection indicating the film becomes less dense and increases in surface roughness with increase of the voltage. This change in surface behaviour could be confirmed by in-situ AFM measurements.

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Hyeonju Lee

2016-10-01

Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

High magnetoresistance at low magnetic fields in self-assembled ZnO-Co nanocomposite films.

Science.gov (United States)

Jedrecy, N; Hamieh, M; Hebert, C; Perriere, J

2017-07-27

The solid phase growth of self-assembled nanocrystals embedded in a crystalline host matrix opens up wide perspectives for the coupling of different physical properties, such as magnetic and semiconducting. In this work, we report the pulsed laser growth at room temperature of thin films composed of a dispersed array of ferromagnetic Co (0001) nanoclusters with an in-plane mono-size width of 1.3 nm, embedded in a ZnO (0001) crystalline matrix. The as-grown films lead to very high values of magnetoresistance, ranging at 9 T from -11% at 300 K to -19% at 50 K, with a steep decrease of the magnetoresistance at low magnetic fields. We establish the relationship between the magnetoresistance behavior and the magnetic response of the Co nanocluster assembly. A spin-dependent tunneling of the electrons between the Co nanoclusters through and by the semi-insulating ZnO host is achieved in our films, promising with regard to magnetic field sensors or Si-integrated spintronic devices. The effects of thermal annealing are also discussed.

Growth of a single-wall carbon nanotube film and its patterning as an n-type field effect transistor device using an integrated circuit compatible process

Energy Technology Data Exchange (ETDEWEB)

Shiau, S H; Gau, C [Institute of Aeronautics and Astronautics, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (China); Liu, C W; Dai, B T [National Nano Device Laboratories, No. 27, Nanke 3rd Road, Science-based Industrial Park, Hsin-shi, Tainan, Taiwan (China)], E-mail: gauc@mail.ncku.edu.tw

2008-03-12

This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) network on a silicon substrate using alcohol as the source gas. The nanosize catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. Finally, fabrication and characteristic measurements of a field effect transistor (FET) using this SWNT film are also demonstrated. This FET is shown to have better electronic properties than any other kind of thin film transistor. This thin film with good electronic properties can be readily applied in the processing of many other SWNT electronic devices.

3D vector distribution of the electro-magnetic fields on a random gold film

Science.gov (United States)

Canneson, Damien; Berini, Bruno; Buil, Stéphanie; Hermier, Jean-Pierre; Quélin, Xavier

2018-05-01

The 3D vector distribution of the electro-magnetic fields at the very close vicinity of the surface of a random gold film is studied. Such films are well known for their properties of light confinement and large fluctuations of local density of optical states. Using Finite-Difference Time-Domain simulations, we show that it is possible to determine the local orientation of the electro-magnetic fields. This allows us to obtain a complete characterization of the fields. Large fluctuations of their amplitude are observed as previously shown. Here, we demonstrate large variations of their direction depending both on the position on the random gold film, and on the distance to it. Such characterization could be useful for a better understanding of applications like the coupling of point-like dipoles to such films.

Influence of interdiffusion on the magnetic properties of Co/Si (100) films after high magnetic field annealing

International Nuclear Information System (INIS)

Zhao, Yue; Wang, Kai; Wang, Qiang; Li, Guojian; Lou, Changsheng; Pang, Hongxuan; He, Jicheng

2015-01-01

The influence of interdiffusion on the magnetic properties of Co/Si (100) films after thermal annealing in the presence of a strong magnetic field was investigated. The interdiffusion coefficients of films that were annealed at temperatures of 380 °C and 420 °C in the presence of high magnetic fields were not affected. However, the interdiffusion coefficient of films annealed at 400 °C in the presence of a high magnetic field decreased significantly. The change in the interdiffusion coefficient, caused by high magnetic field annealing, increased the content of the magnetic phase. This increase in the magnetic phase improved the saturation magnetization. A new method of high magnetic field annealing is presented that can modulate the diffusion and magnetic properties of thin films. - Highlights: • Interdiffusion of Co/Si (100) films by high magnetic field annealing was studied. • Thickness of the diffusion layer was reduced by magnetic field annealing at 400 °C. • Interdiffusion coefficient decreased following magnetic field annealing at 400 °C. • Saturation magnetization increased after high magnetic field annealing at 400 °C

Low-field magnetoresistance anisotropy in strained ultrathin Pr0.67Sr0.33MnO3 films

International Nuclear Information System (INIS)

Wang, H.S.; Li, Q.

1999-01-01

The authors have studied the anisotropic low-field magnetoresistance (LFMR) in ultrathin Pr 0.67 sr 0.33 MnO 3 (PSMO) films epitaxially grown on LaAlO 3 (LAO), STiO 3 (STO), and NdGaO 3 (NGO) substrates which impose compressive, tensile, and nearly-zero strains in the films. The compressively-strained films show a very large negative LFMR in a perpendicular magnetic field and a much smaller MR in a parallel field, while the tensile-strain films show positive LFMR in a perpendicular field and negative MR in a parallel field. The results are interpreted based on the strain-induced magnetic anisotropy

The effect of natural weathering on irradiated polyethylene films

International Nuclear Information System (INIS)

Khoylou, F.; Hassan Pour, S.

2002-01-01

Polyethylene is one of the extensive used plastics in outdoor uses. Outdoor durability of PE in modem agriculture is very important because of large scale food production. UV radiations contained in solar spectrum are the main cause of degradation in outdoor uses of plastics. So, light stabilization of PE has made considerable progress since the early years of its outdoor use. Radiation crosslinking of PE films for improving UV stability is one of the new research fields. In this work,the effect of UV stabilizers on the chemical and mechanical stability of PE have been compared with UV stabilizers and radiation crosslinking together. For this reason two low density polyethylene films were prepared.One film contained 3% of photostabilizers and antioxidant,and the other film was free of additives. The films were irradiated by EB at doses of 30-300 kGy, these crosslinked PE films were exposed to the outdoor condition for 2 years. Determination of the gel content shows that significant crosslinking yields are obtained at high doses. Effect of crosslinking and outdoor exposure on the degradation of stabilized and unstabilized PE films have been studied by FTIR. Data of FTIR show that outdoor degradation of unstabilized PE promote rapidly after irradiation and cause to distortion of samples after 4 months. While, stabilized PE samples show low changes during 2 years outdoor exposure. Mechanical properties of stabilized and unstabilized crosslinked PE films are also presented in this paper. (Author)

Piezoelectric response of a PZT thin film to magnetic fields from permanent magnet and coil combination

Energy Technology Data Exchange (ETDEWEB)

Guiffard, B.; Seveno, R. [Universite de Nantes, Lunam Universite, IETR UMR CNRS 6164, Nantes (France)

2014-07-10

In this study, we report the magnetically induced electric field E{sub 3} in Pb(Zr{sub 0.57}Ti{sub 0.43})O{sub 3} (PZT) thin films, when they are subjected to both dynamic magnetic induction (magnitude B{sub ac} at 45 kHz) and static magnetic induction (B{sub dc}) generated by a coil and a single permanent magnet, respectively. It is found that highest sensitivity to B{sub dc} - Δ vertical stroke E{sub 3} vertical stroke ΔB{sub dc} - is achieved for the thin film with largest effective electrode. This magnetoelectric (ME) effect is interpreted in terms of coupling between eddy current-induced Lorentz forces (stress) in the electrodes of PZT and piezoelectricity. Such coupling was evidenced by convenient modelling of experimental variations of electric field magnitude with both B{sub ac} and B{sub dc} induction magnitudes, providing imperfect open circuit condition was considered. Phase angle of E{sub 3} versus B{sub dc} could also be modelled. At last, the results show that similar to multilayered piezoelectric-magnetostrictive composite film, a PZT thin film made with a simple manufacturing process can behave as a static or dynamic magnetic field sensor. In this latter case, a large ME voltage coefficient of α = vertical stroke E{sub 3} vertical stroke /B{sub ac} = 3.55 V/cm Oe under B{sub dc} = 0.3 T was found. All these results may provide promising low-cost magnetic energy harvesting applications with microsized systems. (orig.)

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

Hysteresis, critical fields and superferromagnetism of the film with perpendicular anisotropy

International Nuclear Information System (INIS)

Kalita, V.M.; Kulyk, M.M.; Ryabchenko, S.M.

2016-01-01

This paper is focused on the analysis of hysteresis and critical phenomena of magnetization reversal of superferromagnetic (SFM) state in nanogranular (NG) Co/Al 2 O 3 film with perpendicular anisotropy. It was demonstrated that the transition from the multidomain SFM state to the homogeneous SFM state, during the magnetization process, occurs critically. The value of the field of critical transition to the homogeneous state depends on the demagnetization field, granular anisotropy and interparticle exchange anisotropy. It turned out that the temperature dependence of the coercive force of the film, despite its SFM state, accords with the Neel–Brown formula for anisotropic single-domain ferromagnetic particles, but has an anomalous angular dependence. It was concluded that domain wall motion affects these features of the coercive field. The domain wall movement may occur due to the overturn of magnetic moments of particles in the boundaries between the superdomains. At the same time, the main factors influencing the coercivity are the anisotropy of the particles, which blocks their magnetic moment reorientation, and demagnetizing factor of the film. Together they lead to the anomalous angular dependence of the coercive field. - Highlights: • The transition from the multidomain SFM to homogeneous SFM state occurs critically. • The value of the critical field depends on the direction of the magnetizing field. • Critical transition field depends on the anisotropy of the interparticle exchange. • Dependence of H c (θ H ) differs from expected one for an ensemble of the particles. • Magnetization reversal occurs by turning the particle's moments in domain borders.

Relation of planar Hall and planar Nernst effects in thin film permalloy

Science.gov (United States)

Wesenberg, D.; Hojem, A.; Bennet, R. K.; Zink, B. L.

2018-06-01

We present measurements of the planar Nernst effect (PNE) and the planar Hall effect (PHE) of nickel-iron (Ni–Fe) alloy thin films. We suspend the thin-film samples, measurement leads, and lithographically-defined heaters and thermometers on silicon-nitride membranes to greatly simplify control and measurement of thermal gradients essential to quantitative determination of magnetothermoelectric effects. Since these thermal isolation structures allow measurements of longitudinal thermopower, or the Seebeck coefficient, and four-wire electrical resistivity of the same thin film, we can quantitatively demonstrate the link between the longitudinal and transverse effects as a function of applied in-plane field and angle. Finite element thermal analysis of this essentially 2D structure allows more confident determination of the thermal gradient, which is reduced from the simplest assumptions due to the particular geometry of the membranes, which are more than 350 μm wide in order to maximize sensitivity to transverse thermoelectric effects. The resulting maximum values of the PNE and PHE coefficients for the Ni–Fe film with 80% Ni we study here are and , respectively. All signals are exclusively symmetry with applied field, ruling out long-distance spin transport effects. We also consider a Mott-like relation between the PNE and PHE, and use both this and the standard Mott relation to determine the energy-derivative of the resistivity at the Fermi energy to be , which is very similar to values for films we previously measured using similar thermal platforms. Finally, using an estimated value for the lead contribution to the longitudinal thermopower, we show that the anisotropic magnetoresistance (AMR) ratio in this Ni–Fe film is two times larger than the magnetothermopower ratio, which is the first evidence of a deviation from strict adherence to the Mott relation between Seebeck coefficient and resistivity.

Field-effect enhanced triboelectric colloidal quantum dot flexible sensor

Science.gov (United States)

Meng, Lingju; Xu, Qiwei; Fan, Shicheng; Dick, Carson R.; Wang, Xihua

2017-10-01

Flexible electronics, which is of great importance as fundamental sensor and communication technologies for many internet-of-things applications, has established a huge market encroaching into the trillion-dollar market of solid state electronics. For the capability of being processed by printing or spraying, colloidal quantum dots (CQDs) play an increasingly important role in flexible electronics. Although the electrical properties of CQD thin-films are expected to be stable on flexible substrates, their electrical performance could be tuned for applications in flexible touch sensors. Here, we report CQD touch sensors employing polydimethylsiloxane (PDMS) triboelectric films. The electrical response of touching activity is enhanced by incorporating CQD field-effect transistors into the device architecture. Thanks to the use of the CQD thin film as a current amplifier, the field-effect CQD touch sensor shows a fast response to various touching materials, even being bent to a large curvature. It also shows a much higher output current density compared to a PDMS triboelectric touch sensor.

The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

International Nuclear Information System (INIS)

Lee, Sunghwan; Park, Hongsik; Paine, David C.

2012-01-01

The effect of contact resistance on the measurement of the field effect mobility of compositionally homogeneous channel indium zinc oxide (IZO)/IZO metallization thin film transistors (TFTs) is reported. The TFTs studied in this work operate in depletion mode as n-channel field effect devices with a field effect mobility calculated in the linear regime (μ FE ) of 20 ± 1.9 cm 2 /Vs and similar of 18 ± 1.3 cm 2 /Vs when calculated in the saturation regime (μ FE sat ). These values, however, significantly underestimate the channel mobility since a large part of the applied drain voltage is dropped across the source/drain contact interface. The transmission line method was employed to characterize the contact resistance and it was found that the conducting-IZO/semiconducting-IZO channel contact is highly resistive (specific contact resistance, ρ C > 100 Ωcm 2 ) and, further, this contact resistance is modulated with applied gate voltage. Accounting for the contact resistance (which is large and modulated by gate voltage), the corrected μ FE is shown to be 39 ± 2.6 cm 2 /Vs which is consistent with Hall mobility measurements of high carrier density IZO.

Strong field-matching effects in superconducting YBa2Cu3O7-δ films with vortex energy landscapes engineered via masked ion irradiation

Science.gov (United States)

Swiecicki, I.; Ulysse, C.; Wolf, T.; Bernard, R.; Bergeal, N.; Briatico, J.; Faini, G.; Lesueur, J.; Villegas, Javier E.

2012-06-01

We have developed a masked ion irradiation technique to engineer the energy landscape for vortices in oxide superconductors. This approach associates the possibility to design the landscape geometry at the nanoscale with the unique capability to adjust the depth of the energy wells for vortices. This enabled us to unveil the key role of vortex channeling in modulating the amplitude of the field matching effects with the artificial energy landscape, and to make the latter govern flux dynamics over an unusually wide range of temperatures and applied fields for high-temperature superconducting films.

Magnetoresistivity and Hall resistivity of a YBCO thin film in a tilted magnetic field

International Nuclear Information System (INIS)

Amirfeiz, M.; Cimberle, M. R.; Ferdeghini, C.; Giannini, E.; Grassano, G.; Marre', D.; Putti, M.; Siri, A. S.

1997-01-01

In this paper they present magnetoresistivity and Hall effect measurements performed on a YBCO epitaxial film as a function of the angle θ between the external magnetic field and the a-b planes. The resistivity and Hall effect measurements are analyzed in term of the general scaling approach proposed by Blatter and coworkers; the Hall conductivity data are examined to separate the contributions due to vortices and quasi particles

Anisotropic behaviour of transmission through thin superconducting NbN film in parallel magnetic field

Energy Technology Data Exchange (ETDEWEB)

Šindler, M., E-mail: sindler@fzu.cz [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Tesař, R. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic); Koláček, J. [Institute of Physics ASCR, v. v. i., Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Skrbek, L. [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Praha (Czech Republic)

2017-02-15

Highlights: • Transmission through thin NbN film in parallel magnetic field exhibits strong anisotropic behaviour in the terahertz range. • Response for a polarisation parallel with the applied field is given as weighted sum of superconducting and normal state contributions. • Effective medium approach fails to describe response for linear polarisation perpendicular to the applied magnetic field. - Abstract: Transmission of terahertz waves through a thin layer of the superconductor NbN deposited on an anisotropic R-cut sapphire substrate is studied as a function of temperature in a magnetic field oriented parallel with the sample. A significant difference is found between transmitted intensities of beams linearly polarised parallel with and perpendicular to the direction of applied magnetic field.

Dynamical mechanism of the liquid film motor

Science.gov (United States)

Liu, Zhong-Qiang; Li, Ying-Jun; Zhang, Guang-Cai; Jiang, Su-Rong

2011-02-01

The paper presents a simple dynamical model to systemically explain the rotation mechanism of the liquid film motor reported by experiments. The field-induced-plasticity effect of the liquid film is introduced into our model, in which the liquid film in crossed electric fields is considered as a Bingham plastic fluid with equivalent electric dipole moment. Several analytic results involving the torque of rotation, the scaling relation of the threshold fields, and the dynamics equation of a square film and its solution are obtained. We find that the rotation of the liquid film motor originates from the continuous competition between the destruction and the reestablishment of the polarization equilibrium maintained by the external electric field, which is free from the boundary effects. Most experimental phenomena observed in direct current electric fields are interpreted well.

Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

2008-01-01

Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

International Nuclear Information System (INIS)

Zhao Xiaofeng; Wen Dianzhong; Zhuang Cuicui; Cao Jingya; Wang Zhiqiang

2013-01-01

A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed. The magnetic field sensors are fabricated on 〈100〉 orientation high resistivity (ρ > 500 Ω·cm) silicon substrates by using CMOS technology, which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers. The experimental results show that when V DS = 5.0 V, the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length—width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 78 mV/T, 55 mV/T and 34 mV/T, respectively. Under the same conditions, the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers. (semiconductor technology)

Curvature effects on the electronic and transport properties of semiconductor films

Science.gov (United States)

Batista, F. F.; Chaves, Andrey; da Costa, D. R.; Farias, G. A.

2018-05-01

Within the effective mass approximation, we study the curvature effects on the electronic and transport properties of semiconductor films. We investigate how the geometry-induced potential resulting exclusively from periodic ripples in the film induces electronic confinement and a superlattice band structure. For fixed curvature parameters, such a confinement can be easily tuned by an external electric field, hence features of the superlattice band structure such as its energy gaps and band curvature can be controlled by an external parameter. We also show that, for some values of curvature and electric field, it is possible to obtain massless Dirac bands for a smooth curved structure. Moreover, we use a wave packet propagation method to demonstrate that the ripples are responsible for a significant inter-sub-band transition, specially for moderate values of the ripple height.

An all-field-range description of the critical current density in superconducting YBCO films

International Nuclear Information System (INIS)

Golovchanskiy, I A; Pan, A V; Shcherbakova, O V; Fedoseev, S A; Dou, S X

2011-01-01

A new critical current density (J c ) model for high-quality YBCO (YBa 2 Cu 3 O 7 ) thin films has been proposed, combining thermally activated flux creep with a vortex pinning potential for columnar defects. The pinning for thermally activated vortices has been described as strong pinning on chains of individual edge dislocations that form low-angle domain boundaries in high-quality YBCO thin films. The model yields an adequate description of the J c behaviour over the whole applied field range, as verified by direct measurements of J c in YBCO thin films grown by pulsed-laser deposition. It also indicates that the effective pinning landscape changes under the influence of the external conditions. Remarkably, the pinning potential obtained from the model is consistent with the values obtained for columnar defects, which confirms the validity of the overall approach.

Electric field dependence of excess electrical conductivity below transition temperature in thin superconducting lead films

Energy Technology Data Exchange (ETDEWEB)

Ashwini Kumar, P K; Duggal, V P [Delhi Univ. (India). Dept. of Physics and Astrophysics

1976-01-26

Results of measurements of the electric field dependence of the excess electrical conductivity are reported in thin superconducting lead films below the transition temperature. It is observed that the normal state sheet resistance has some effect on the nonlinearity but the theory of Yamaji still fits well to the experimental data.

The calibration of photographic and spectroscopic films: 1: A microscopic analysis of IIaO films. 2: The effects of agitation and soaking on IIaO films. 3: The effects of electric field on IIaO films. 4: The effects of X-ray radiation on IIaO films

Science.gov (United States)

Hammond, E. C., Jr.; Peters, K.; Boone, K.

1978-01-01

The grain structure of the emulsion using both reflected and transmission light was examined along with the effects of soaking. The effect of a static charge by a Tesla-coil, and the effects of airport equipment, and dental X-rays on the film were also analyzed.

Tuning the photovoltaic effect of multiferroic CoFe{sub 2}O{sub 4}/Pb(Zr, Ti)O{sub 3} composite films by magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Pan, Dan-Feng; Chen, Guang-Yi; Bi, Gui-Feng [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Zhang, Hao [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo, E-mail: wanjg@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

2016-05-30

The 0–3 type CoFe{sub 2}O{sub 4}-Pb(Zr,Ti)O{sub 3} (CFO-PZT) multiferroic composite films have been prepared by a sol-gel process and spin-coating technique. A confirmable photovoltaic effect is observed under ultraviolet light irradiation. Moreover, this photovoltaic effect can be tuned by external magnetic fields. The maximum magnetic modulation ratios of short-circuit current density and open-circuit voltage can reach as high as 13.7% and 12.8% upon the application of 6 kOe DC magnetic field. Through remnant polarization measurements under various magnetic fields and detailed analysis of the energy band structures, we elucidate the mechanism of tuning photovoltaic effect by magnetic fields and attribute it to the combination of two factors. One is the decreased ferroelectric-polarization-induced depolarization electric field and another is the band structure reconstruction at CFO-PZT interfaces, both of which are dominated by the magnetoelectric coupling via interfacial stress transferring at nanoscale. This work makes some attempts of coupling photo-induced effects with magnetoelectric effect in multiferroic materials and will widen the practical ranges of multiferroic-based applications.

Fluorinated copper-phthalocyanine-based n-type organic field-effect transistors with a polycarbonate gate insulator

International Nuclear Information System (INIS)

Sethuraman, Kunjithapatham; Kumar, Palanisamy; Santhakumar, Kannappan; Ochiai, Shizuyasu; Shin, Paikkyun

2012-01-01

Fluorinated copper-phthalocyanine (F 16 CuPc) thin films were prepared by using a vacuum evaporation technique and were applied to n-type organic field-effect transistors (OFETs) as active channel layers combined with a spin-coated polycarbonate thin-film gate insulator. The output characteristics of the resulting n-type OFET devices with bottom-gate/bottom-contact structures were investigated to evaluate the performances such as the field effect mobility (μ FE ), the on/off current ratio (I on/off ), and the threshold voltage (V th ). A relatively high field effect mobility of 6.0 x 10 -3 cm 2 /Vs was obtained for the n-type semiconductor under atmospheric conditions with an on/off current ratio of 1 x 10 4 and a threshold voltage of 5 V. The electron mobility of the n-type semiconductor was found to depend strongly on the growth temperature of the F 16 CuPc thin films. X-ray diffraction profiles showed that the crystallinity and the orientation of the F 16 CuPc on a polycarbonate thin film were enhanced with increasing growth temperature. Atomic force microscopy studies revealed various surface morphologies of the active layer. The field effect mobility of the F 16 CuPc-OFET was closely related to the crystallinity and the orientation of the F 16 CuPc thin film.

Modeling on the cathodoluminescence properties of the thin film phosphors for field emission flat panel displays

Science.gov (United States)

Cho, Kyu-Gong

2000-12-01

In order to investigate the effects of the film roughness with the fundamental luminance parameters of thin film phosphors, Y2 O3:Eu films with different thickness and roughness values were deposited on various substrate materials using a pulsed laser deposition technique under a controlled experimental procedure. The best luminous efficiency was observed from the Y2O3:Eu films on quartz substrates due to the smaller refractive index and low absorption characteristics of the quartz substrates which produce a larger amount of total internal reflection in the film and low loss of light intensity during the multiple internal reflections. The trapped light inside the film can escape the film more easily due to rougher film surface. The better epitaxial growth capability of the Y2O 3:Eu films with the LaAlO3 substrates resulted in higher luminous efficiency in the small surface roughness region. Higher luminous efficiency was observed in reflection mode than in transmission mode due to the contribution of diffusely scattered light at the air-film interface. A new theoretical model based on the diffraction scattering theory of light, the steady-state diffusion condition of carriers and the Kanaya-Okayama's electron- beam-solid interaction range satisfactorily explains all the experimental results mentioned above. The model also provides solid understandings on the cathodoluminescence properties of the thin film phosphors with the effects of other single or multiple luminance parameters. The parameters encountered for the model are surface roughness, electron-beam-solid interaction, surface recombination rate of carriers, charge carrier diffusion properties, multiple scattering at the interfaces (air- film, film-substrate, and substrate-air), optical properties of the material, film thickness, and substrate type. The model supplies a general solution in both qualitative and quantitative ways to estimate the luminance properties of the thin film phosphors and it can be

Applied magnetic field angle dependence of the static and dynamic magnetic properties in FeCo films during the deposition

Energy Technology Data Exchange (ETDEWEB)

Cao, Derang; Zhu, Zengtai; Feng, Hongmei; Pan, Lining; Cheng, Xiaohong; Wang, Zhenkun [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Wang, Jianbo [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Liu, Qingfang, E-mail: liuqf@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2016-10-15

FeCo films were prepared by a simple and convenient electrodeposition method. An external magnetic field was applied to the film to induce magnetic anisotropy during deposition. Comparing with the previous work, the angle between the direction of applied magnetic field and film plane is changed from in-plane to out-plane. The influence of the applied magnetic field on magnetic properties was investigated. As a result, it can be found that the in-plane anisotropy is driven by the in-plane component of the magnetic field applied during growth. In addition, the result can also be confirmed by the dynamic magnetic anisotropy of the film obtained by vector network analyzer ferromagnetic resonance technique. - Highlights: • FeCo films were prepared by electrodeposition method. • An external magnetic field was applied to induce anisotropy during deposition. • The direction of applied magnetic field is changed from in-plane to out-plane. • The magnetic properties of films were investigated by vector network analyzer. • The in-plane anisotropy is driven by the in-plane component of the field.

The effects of Fe2O3 nanoparticles on MgB2 superconducting thin films

International Nuclear Information System (INIS)

Koparan, E.T.; Sidorenko, A.; Yanmaz, E.

2013-01-01

Full text: Since the discovery of superconductivity in binary MgB 2 compounds, extensive studies have been carried out because of its excellent properties for technological applications, such as high transition temperature (T c = 39 K), high upper critical field (H c2 ), high critical current density (J c ). Thin films are important for fundamental research as well as technological applications of any functional materials. Technological applications primarily depend on critical current density. The strong field dependence of J c for MgB 2 necessitates an enhancement in flux pinning performance in order to improve values in high magnetic fields. An effective way to improve the flux pinning is to introduce flux pinning centers into MgB 2 through a dopant having size comparable to the coherence length of MgB 2 . In this study, MgB 2 film with a thickness of about 600 nm was deposited on the MgO (100) single crystal substrate using a 'two-step' synthesis technique. Firstly, deposition of boron thin film was carried out by rf magnetron sputtering on MgO substrates and followed by a post deposition annealing at 850 degrees Celsius in magnesium vapour. In order to investigate the effect of Fe 2 O 3 nanoparticles on the structural and magnetic properties of films, MgB 2 films were coated with different concentrations of Fe 2 O 3 nanoparticles by a spin coating process. The effects of different concentrations of ferromagnetic Fe 2 O 3 nanoparticles on superconducting properties of obtained films were carried out by using structural (XRD, SEM, AFM), electrical (R-T) and magnetization (M-H, M-T and AC Susceptibility) measurements. It was calculated that anisotropic coefficient was about γ = 1.2 and coherence length of 5 nm for the uncoated film. As a result of coherence length, the appropriate diameters of Fe 2 O 3 nanoparticles were found to be 10 nm, indicating that these nanoparticles served as the pinning centers. Based on the data obtained from this study, it can be

Magnetic properties dependence on the coupled effects of magnetic fields on the microstructure of as-deposited and post-annealed Co/Ni bilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Franczak, Agnieszka [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science, Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Levesque, Alexandra, E-mail: alexandra.levesque@univ-reims.fr [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Coïsson, Marco [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Li, Donggang [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France); Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 110004 Shenyang (China); Barrera, Gabriele [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Università di Torino, Dipartimento di Chimica, 10125 Torino (Italy); Celegato, Federica [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Wang, Qiang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 110004 Shenyang (China); Tiberto, Paola [Electromagnetism Division, Istituto Nazionale di Ricerca Metrologica, 10135 Torino (Italy); Chopart, Jean-Paul [LISM, Universite de Reims Champagne-Ardenne, BP 1039, 51687 Reims Cedex 2 (France)

2014-12-15

Magnetic films and multilayers are the focus of much attention motivated mainly by their wide range of applications, such as magnetic data storage devices and sensors. The magnetic multilayer structures are normally prepared through physical means of deposition, as molecular beam epitaxy (MBE) or sputtering. However, there are already examples of materials produced by electrochemical routes, which share with the other deposition techniques a high sensitivity of magnetic and transport properties of the samples on their crystallographic and chemical structure. In addition, electrochemical deposition allows growing structures with high aspect ratio, which are not possible to obtain by MBE deposition followed by lithographic processes. The present work investigates the Co/Ni bilayered nanocrystalline films produced through the temperature-elevated electrochemical deposition, and modified by annealing carried out also under an external magnetic field. The results indicate an increase of the coercive field of deposited Co/Ni bilayers, when the electrodeposition process was conducted under magnetic field of 1 T. The annealing processing caused further remarkable increase of the coercive field of as-prepared bilayers that has been preserved under magnetic annealing conditions. The magnetic properties are discussed in terms of samples microstructure. In as-prepared samples the in-plane magnetization was observed, while high temperature treatment, causing microstructural changes in the film, resulted also in appearance of a small component of magnetization oriented perpendicularly to the films’ plane that could have been observed by MFM analysis. The induced perpendicular magnetization component in the post-annealed samples was a result of the magnetic field applied in the perpendicular direction to the samples’ surface during annealing treatment. - Highlights: • Co deposits were obtained at high electrolyte temperature under applied B-field. • The

Magnetic properties dependence on the coupled effects of magnetic fields on the microstructure of as-deposited and post-annealed Co/Ni bilayer thin films

International Nuclear Information System (INIS)

Franczak, Agnieszka; Levesque, Alexandra; Coïsson, Marco; Li, Donggang; Barrera, Gabriele; Celegato, Federica; Wang, Qiang; Tiberto, Paola; Chopart, Jean-Paul

2014-01-01

Magnetic films and multilayers are the focus of much attention motivated mainly by their wide range of applications, such as magnetic data storage devices and sensors. The magnetic multilayer structures are normally prepared through physical means of deposition, as molecular beam epitaxy (MBE) or sputtering. However, there are already examples of materials produced by electrochemical routes, which share with the other deposition techniques a high sensitivity of magnetic and transport properties of the samples on their crystallographic and chemical structure. In addition, electrochemical deposition allows growing structures with high aspect ratio, which are not possible to obtain by MBE deposition followed by lithographic processes. The present work investigates the Co/Ni bilayered nanocrystalline films produced through the temperature-elevated electrochemical deposition, and modified by annealing carried out also under an external magnetic field. The results indicate an increase of the coercive field of deposited Co/Ni bilayers, when the electrodeposition process was conducted under magnetic field of 1 T. The annealing processing caused further remarkable increase of the coercive field of as-prepared bilayers that has been preserved under magnetic annealing conditions. The magnetic properties are discussed in terms of samples microstructure. In as-prepared samples the in-plane magnetization was observed, while high temperature treatment, causing microstructural changes in the film, resulted also in appearance of a small component of magnetization oriented perpendicularly to the films’ plane that could have been observed by MFM analysis. The induced perpendicular magnetization component in the post-annealed samples was a result of the magnetic field applied in the perpendicular direction to the samples’ surface during annealing treatment. - Highlights: • Co deposits were obtained at high electrolyte temperature under applied B-field. • The

Magnetic field induced changes in linear and nonlinear optical properties of Ti incorporated Cr2O3 nanostructured thin film

Science.gov (United States)

Baraskar, Priyanka; Chouhan, Romita; Agrawal, Arpana; Choudhary, R. J.; Sen, Pranay K.; Sen, Pratima

2018-03-01

We report the magnetic field effect on the linear and nonlinear optical properties of pulse laser ablated Ti-incorporated Cr2O3 nanostructured thin film. Optical properties have been experimentally analyzed under Voigt geometry by performing ultraviolet-visible spectroscopy and closed aperture Z-scan technique using a continuous wave He-Ne laser source. Nonlinear optical response reveals a single peak-valley feature in the far field diffraction pattern in absence of magnetic field (B = 0) confirming self-defocussing effect. This feature switches to a valley-peak configuration for B = 5000G, suggesting self-focusing effect. For B ≤ 750G, oscillations were observed revealing the occurrence of higher order nonlinearity. Origin of nonlinearity is attributed to the near resonant d-d transitions observed from the broad peak occurring around 2 eV. These transitions are of magnetic origin and get modified under the application of external magnetic field. Our results suggest that magnetic field can be used as an effective tool to monitor the sign of optical nonlinearity and hence the thermal expansion in Ti-incorporated Cr2O3 nanostructured thin film.

Electric and magnetic fields effects on the transport properties of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Villafuerte, M. E-mail: mvillafeurte@herrera.unt.edu.ar; Duhalde, S. E-mail: sduhald@fi.uba.ar; Rubi, D.; Bridoux, G.; Heluani, S.; Sirena, M.; Steren, L

2004-05-01

The insulator to metal transition in manganites can be drastically influenced by internal factors, such as chemical composition, or under a variety of external perturbations, like magnetic or electric fields. In this work, the electrical resistance of La{sub 0.5}Ca{sub 0.5}MnO{sub 3} thin films was investigated using different constant voltages. At low temperature the conductivity of the films is non-Ohmic and moderate electric fields results in resistivity switching to metastable states. Comparisons between the influence of magnetic and electric fields on transport measurements are reported.

Recent Advance in Organic Spintronics and Magnetic Field Effect

Science.gov (United States)

Valy Vardeny, Z.

2013-03-01

In this talk several important advances in the field of Organic Spintronics and magnetic field effect (MFE) of organic films and optoelectronic devices that have occurred during the past two years from the Utah group will be surveyed and discussed. (i) Organic Spintronics: We demonstrated spin organic light emitting diode (spin-OLED) using two FM injecting electrodes, where the electroluminescence depends on the mutual orientation of the electrode magnetization directions. This development has opened up research studies into organic spin-valves (OSV) in the space-charge limited current regime. (ii) Magnetic field effect: We demonstrated that the photoinduced absorption spectrum in organic films (where current is not involved) show pronounced MFE. This unravels the underlying mechanism of the MFE in organic devices, to be more in agreement with the field of MFE in Biochemistry. (iii) Spin effects in organic optoelectronic devices: We demonstrated that certain spin 1/2 radical additives to donor-acceptor blends substantially enhance the power conversion efficiency of organic photovoltaic (OPV) solar cells. This effect shows that studies of spin response and MFE in OPV devices are promising. In collaboration with T. Nguyen, E. Ehrenfreund, B. Gautam, Y. Zhang and T. Basel. Supported by the DOE grant 04ER46109 ; NSF Grant # DMR-1104495 and MSF-MRSEC program DMR-1121252 [2,3].

Characterization of Alq3 thin films by a near-field microwave microprobe.

Science.gov (United States)

Hovsepyan, Artur; Lee, Huneung; Sargsyan, Tigran; Melikyan, Harutyun; Yoon, Youngwoon; Babajanyan, Arsen; Friedman, Barry; Lee, Kiejin

2008-09-01

We observed tris-8-hydroxyquinoline aluminum (Alq3) thin films dependence on substrate heating temperatures by using a near-field microwave microprobe (NFMM) and by optical absorption at wavelengths between 200 and 900 nm. The changes of absorption intensity at different substrate heating temperatures are correlated to the changes in the sheet resistance of Alq3 thin films.

Engineering stress in thin films for the field of bistable MEMS

International Nuclear Information System (INIS)

Ratnayake, Dilan; Gowrishetty, Usha R; McNamara, Shamus P; Walsh, Kevin M; Martin, Michael D; Porter, Daniel A; Berfield, Thomas A

2015-01-01

While stress-free and tensile films are well-suited for released in-plane MEMS designs, compressive films are needed for released out-of-plane MEMS structures such as buckled beams and diaphragms. This study presents a characterization of stress on a variety of sputtered and plasma-enhanced chemical vapour deposition (PECVD)-deposited films, including titanium tungsten, invar, silicon nitride and amorphous silicon, appropriate for the field of bistable MEMS. Techniques and strategies are presented (including varying substrate bias, pressure, temperature, and frequency multiplexing) for tuning internal stress across the spectrum from highly compressive (−2300 MPa) to highly tensile (1500 MPa). Conditions for obtaining stress-free films are also presented in this work. Under certain conditions during the PECVD deposition of amorphous silicon, interesting ‘micro-bubbles’ formed within the deposited films. Strategies to mitigate their formation are presented, resulting in a dramatic improvement in surface roughness quality from 667 nm root mean square (RMS) to 16 nm RMS. All final deposited films successfully passed the traditional ‘tape test’ for adhesion. (paper)

Effect of Polylactic Acid-Degradable Film Mulch on Soil Temperature and Cotton Yield

Directory of Open Access Journals (Sweden)

ZHANG Ni

2016-03-01

Full Text Available Concern on biodegradable plastic film is increasing because of pollution problems caused by the plastic films currently used. The objective of this field experiment is to evaluate the effect of two thicknesses of polyactic acid-degradable film on soil temperature and cotton yield. The results showed that small holes appeared in the polyactic acid-degradable film at 17~22 d after it was installed. Burst period appeared about 60 d after installation. Splits were observed in the polyactic acid-degradable film at 130 d after installation. Soil temperatures rose slowly under polyactic acid-degradable film during the cotton seedling stage. Daytime soil temperatures were 0.8℃ and 6.2℃ lower under 18μm and 15μm thick polyactic acid-degradable film than non-degradable plastic film(CK, respectively. Nighttime soil temperatures under the polyactic acid-degradable film were about 1℃ warmer than CK. There was no significant difference in cotton yields between the 18μm polyactic acid degradable film treatment and CK. In contrast, yields in the 15μm degradable plastic film treatment were 8.9% less than that in CK. This study indicated that 18μm polyactic acid degradable plastic film had good degradability and no negative effect on cotton growth. The 18μm polyactic acid degradable plastic film can replace ordinary plastic film in agricultural production.

Enhancement on field emission characteristics of pulsed laser deposited diamondlike carbon films using Au precoatings

International Nuclear Information System (INIS)

Chuang, F.Y.; Sun, C.Y.; Cheng, H.F.; Lin, I.N.

1997-01-01

Using Au precoatings has been observed to significantly enhance the field emission properties of diamondlike carbon (DLC) films deposited on Si substrates. The electron emission can be turned on at a low field as 7 V/μm and a large emission current density as 2000 μA/cm 2 can be obtained at 20 V/μm applied field. However, preannealing the Au-coated Si substrates at 500 degree C for 30 min is necessary to achieve such a performance. Microscopic examination on surface and cross-sectional morphologies of the DLC/Au/Si films using atomic force microscopy and scanning electron microscopy, respectively, in conjunction with the elemental depth profile examination of these films using secondary ion mass spectroscopy, indicated that substantial interdiffusion between DLC, Au, and Si layers has occurred. Such kind of reaction is proposed to lower the resistance for electrons to transport across the interfaces and, thereafter, enhances the field emission properties of the DLC/Au/Si films. copyright 1997 American Institute of Physics

Effects of spacer layer on growth, stress and magnetic properties of sputtered permalloy film

International Nuclear Information System (INIS)

Cheng, S.F.; Lubitz, P.; Zheng, Y.; Edelstein, A.S.

2004-01-01

A microelectromechanical (MEMS) flux concentrator (J. Appl. phys. 91 (2002) 7795), is a device that will minimize 1/f noise in magnetic sensors by modulating the magnetic field at the position of the sensor. This requires high permeability and low stress permalloy (Py) films to be deposited on the MEMS flaps (J. Appl. phys. 91 (2002) 7795). Py (Ni 80 Fe 20 ) films from 100 to 560 nm thick were deposited on Si substrates using DC magnetron sputtering. The effects of deposition conditions on the grain morphology, texture, stress and magnetic properties were studied. Lower sputtering pressure changes film stress from tension to compression and increases the out of film plane texture, while higher power increases tension and texture. Neutral film stress was obtained with 100 W of sputtering power and 1.25 mTorr of Ar gas pressure. With increasing thickness, the Py film was found to develop a stripe-like domain configuration at low fields because of strong out-of-plane magnetic anisotropy. The critical thickness is around 180 nm.This may be explained by a competition between planar demagnetization fields and columnar magnetic anisotropy. Adding 5 nm of Ta or Cr layer as spacer successfully broke up the continuity of the magnetic structure and allowed us to produce high-permeability films by fabricating (Ta/Py) or (Cr/Py) multilayer films with each Py layer thinner than the critical thickness

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

2014-01-01

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

SU-F-T-579: Extrapolation Techniques for Small Field Dosimetry Using Gafchromic EBT3 Film

Energy Technology Data Exchange (ETDEWEB)

Morales, J [Chris OBrien Lifehouse, Camperdown, NSW (Australia)

2016-06-15

Purpose: The purpose of this project is to test an experimental approach using an extrapolation technique for Gafchromic EBT3 film for small field x-ray dosimetry. Methods: Small fields from a Novalis Tx linear accelerator with HD Multileaf Collimators with 6 MV was used. The field sizes ranged from 5 × 5 to 50 × 50 mm2 MLC fields and a range of circular cones of 4 to 30 mm2 diameters. All measurements were performed in water at an SSD of 100 cm and at a depth of 10 cm. The relative output factors (ROFs) were determined from an extrapolation technique developed to eliminate the effects of partial volume averaging in film scan by scanning films with high resolution (1200 DPI). The size of the regions of interest (ROI) was varied to produce a plot of ROFs versus ROI which was then extrapolated to zero ROI to determine the relative output factor. The results were compared with other solid state detectors with proper correction, namely, IBA SFD diode, PTW 60008 and PTW 60012 diode. Results: For the 4 mm cone, the extrapolated ROF had a value of 0.658 ± 0.014 as compared to 0.642 and 0.636 for 0.5 mm and 1 mm2 ROI analysis, respectively. This showed a change in output factor of 2.4% and 3.3% at this comparative ROI sizes. In comparison, the 25 mm cone had a difference in measured output factor of 0.3% and 0.5% between 0.5 and 1.0 mm, respectively compared to zero volume. For the fields defined by MLCs a difference of up to 2% for 5×5 mm2 was observed. Conclusion: A measureable difference can be seen in ROF based on the ROI when radiochromic film is used. Using extrapolation technique from high resolution scanning a good agreement can be achieved.

Field-tuned superconductor-insulator transitions and Hall resistance in thin polycrystalline MoN films

Science.gov (United States)

Makise, Kazumasa; Ichikawa, Fusao; Asano, Takayuki; Shinozaki, Bunju

2018-02-01

We report on the superconductor-insulator transitions (SITs) of disordered molybdenum nitride (MoN) thin films on (1 0 0) MgO substrates as a function of the film thickness and magnetic fields. The T c of the superconducting MoN films, which exhibit a sharp superconducting transition, monotonically decreases as the normal state R sq increases with a decreasing film thickness. For several films with different thicknesses, we estimate the critical field H c and the product zν  ≃  0.6 of the dynamical exponent z and the correlation length exponent ν using a finite scaling analysis. The value of this product can be explained by the (2  +  1) XY model. We found that the Hall resistance ΔR xy (H) is maximized when the magnetic field satisfies H HP(T) \\propto |1  -  T/T C0| in the superconducting state and also in the normal states owning to the superconducting fluctuation corresponding to the ghost critical magnetic field. We measured the Hall conductivity δσ xy (H)  =  σ xy (H)  -  σ xyn and fit the Gaussian approximation theory for δσ xy (H) to the experimental data. Agreement between the data and the theory beyond H c suggests the survival of the Cooper pair in the insulating region of the SIT.

Goos-Hänchen effect and bending of spin wave beams in thin magnetic films

International Nuclear Information System (INIS)

Gruszecki, P.; Krawczyk, M.; Romero-Vivas, J.; Dadoenkova, Yu. S.; Dadoenkova, N. N.; Lyubchanskii, I. L.

2014-01-01

For magnon spintronic applications, the detailed knowledge of spin wave (SW) beam dispersion, transmission (reflection) of SWs passing through (reflected from) interfaces, or borders or the scattering of SWs by inhomogeneities is crucial. These wave properties are decisive factors on the usefulness of a particular device. Here, we demonstrate, using micromagnetic simulations supported by an analytical model, that the Goos-Hänchen (GH) shift exists for SW reflecting from thin film edge and that with the effect becomes observable. We show that this effect will exist for a broad range of frequencies in the dipole-exchange range, with the magnetization degree of pinning at the film edge as the crucial parameter, whatever its nature. Moreover, we have also found that the GH effect can be accompanied or even dominating by a bending of the SW beam due to the inhomogeneity of the internal magnetic field. This inhomogeneity, created by demagnetizing field taking place at the film edge, causes gradual change of SWs refractive index. The refraction of the SW beams by the non-uniformity of the magnetic field enables the exploration of graded index magnonics and metamaterial properties for the transmission and processing of information at nanoscale

Goos-Hänchen effect and bending of spin wave beams in thin magnetic films

Energy Technology Data Exchange (ETDEWEB)

Gruszecki, P., E-mail: pawel.gruszecki@amu.edu.pl; Krawczyk, M., E-mail: krawczyk@amu.edu.pl [Faculty of Physics, Adam Mickiewicz University in Poznań, Umultowska 85, Poznań 61-614 (Poland); Romero-Vivas, J. [Department of Electronic and Computer Engineering, University of Limerick, Limerick (Ireland); Dadoenkova, Yu. S.; Dadoenkova, N. N. [Donetsk Physical and Technical Institute of the National Academy of Sciences of Ukraine, 83114 Donetsk (Ukraine); Ulyanovsk State University, 42 Leo Tolstoy str., 432000 Ulyanovsk (Russian Federation); Lyubchanskii, I. L. [Donetsk Physical and Technical Institute of the National Academy of Sciences of Ukraine, 83114 Donetsk (Ukraine)

2014-12-15

For magnon spintronic applications, the detailed knowledge of spin wave (SW) beam dispersion, transmission (reflection) of SWs passing through (reflected from) interfaces, or borders or the scattering of SWs by inhomogeneities is crucial. These wave properties are decisive factors on the usefulness of a particular device. Here, we demonstrate, using micromagnetic simulations supported by an analytical model, that the Goos-Hänchen (GH) shift exists for SW reflecting from thin film edge and that with the effect becomes observable. We show that this effect will exist for a broad range of frequencies in the dipole-exchange range, with the magnetization degree of pinning at the film edge as the crucial parameter, whatever its nature. Moreover, we have also found that the GH effect can be accompanied or even dominating by a bending of the SW beam due to the inhomogeneity of the internal magnetic field. This inhomogeneity, created by demagnetizing field taking place at the film edge, causes gradual change of SWs refractive index. The refraction of the SW beams by the non-uniformity of the magnetic field enables the exploration of graded index magnonics and metamaterial properties for the transmission and processing of information at nanoscale.

Annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films

Energy Technology Data Exchange (ETDEWEB)

Alves, M. J. P.; Gonzalez-Chavez, D. E.; Sommer, R. L. [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, Urca, 22290-180 Rio de Janeiro, RJ (Brazil); Bohn, F. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

2015-03-28

We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.

An effective field study of the magnetic properties and critical behaviour at the surface Ising film

International Nuclear Information System (INIS)

Bengrine, M.; Benyoussef, A.; Ez-Zahraouy, H.; Mhirech, F.

1998-09-01

The influence of corrugation and disorder at the surface on the critical behaviour of a ferromagnetic spin-1/2 Ising film is investigated using mean-field theory and finite cluster approximation. It is found that the critical surface exponent β 1 follows closely the one of a perfect surface, in the two cases: corrugated surface and random equiprobable coupling surface. However, in the case of flat surface with random interactions the surface critical exponent β 1 depends on the concentration p of the strong interaction for p>p c =0,5, while for p≤p c , such critical exponent is independent on the value of p and is equal to the one of the perfect surface. Moreover, in the case of corrugated surface, the effective exponent for a layer z, β eff J(z,n), is calculated as a function of the number of steps at the surface. (author)

Electric field tuning of magnetism in heterostructure of yttrium iron garnet film/lead magnesium niobate-lead zirconate titanate ceramic

Science.gov (United States)

Lian, Jianyun; Ponchel, Freddy; Tiercelin, Nicolas; Chen, Ying; Rémiens, Denis; Lasri, Tuami; Wang, Genshui; Pernod, Philippe; Zhang, Wenbin; Dong, Xianlin

2018-04-01

In this paper, the converse magnetoelectric (CME) effect by electric field tuning of magnetization in an original heterostructure composed of a polycrystalline yttrium iron garnet (YIG) film and a lead magnesium niobate-lead zirconate titanate (PMN-PZT) ceramic is presented. The magnetic performances of the YIG films with different thicknesses under a DC electric field applied to the PMN-PZT ceramics and a bias magnetic field are investigated. All the magnetization-electric field curves are found to be in good agreement with the butterfly like strain curve of the PMN-PZT ceramic. Both the sharp deformation of about 2.5‰ of PMN-PZT and the easy magnetization switching of YIG are proposed to be the reasons for the strongest CME interaction in the composite at the small electric coercive field of PMN-PZT (4.1 kV/cm) and the small magnetic coercive field of YIG (20 Oe) where the magnetic susceptibility reaches its maximum value. A remarkable CME coefficient of 3.1 × 10-7 s/m is obtained in the system with a 600 nm-thick YIG film. This heterostructure combining multiferroics and partially magnetized ferrite concepts is able to operate under a small or even in the absence of an external bias magnetic field and is more compact and power efficient than the traditional magnetoelectric devices.

Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

Directory of Open Access Journals (Sweden)

Savio Fabretti

2014-03-01

Full Text Available We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T = 0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

Edge states and integer quantum Hall effect in topological insulator thin films.

Science.gov (United States)

Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

2015-08-25

The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

Magnetoelectric effect in Cr2O3 thin films

Science.gov (United States)

He, Xi; Wang, Yi; Sahoo, Sarbeswar; Binek, Christian

2008-03-01

Magnetoelectric materials experienced a recent revival as promising components of novel spintronic devices [1, 2, 3]. Since the magnetoelectric (ME) effect is relativistically small in traditional antiferromagnetic compounds like Cr2O3 (max. αzz 4ps/m ) and also cross- coupling between ferroic order parameters is typically small in the modern multiferroics, it is a challenge to electrically induce sufficient magnetization required for the envisioned device applications. A straightforward approach is to increase the electric field at constant voltage by reducing the thickness of the ME material to thin films of a few nm. Since magnetism is known to be affected by geometrical confinement thickness dependence of the ME effect in thin film Cr2O3 is expected. We grow (111) textured Cr2O3 films with various thicknesses below 500 nm and study the ME effect for various ME annealing conditions as a function of temperature with the help of Kerr-magnetometry. [1] P. Borisov et al. Phys. Rev. Lett. 94, 117203 (2005). [2] Ch. Binek, B.Doudin, J. Phys. Condens. Matter 17, L39 (2005). [3] R. Ramesh and Nicola A. Spaldin 2007 Nature Materials 6 21.

Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

Science.gov (United States)

Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

2013-05-22

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

International Nuclear Information System (INIS)

Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

2015-01-01

Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

Electric-field induced spin accumulation in the Landau level states of topological insulator thin films

Science.gov (United States)

Siu, Zhuo Bin; Chowdhury, Debashree; Basu, Banasri; Jalil, Mansoor B. A.

2017-08-01

A topological insulator (TI) thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to one other across the finite thickness. An out-of-plane magnetic field leads to the formation of discrete Landau level states in the system, whereas an in-plane magnetization breaks the angular momentum symmetry of the system. In this work, we study the spin accumulation induced by the application of an in-plane electric field to the TI thin film system where the Landau level states and inter-surface coupling are simultaneously present. We show, via Kubo formula calculations, that the in-plane spin accumulation perpendicular to the magnetization due to the electric field vanishes for a TI thin film with symmetric top and bottom surfaces. A finite in-plane spin accumulation perpendicular to both the electric field and magnetization emerges upon applying either a differential magnetization coupling or a potential difference between the two film surfaces. This spin accumulation results from the breaking of the antisymmetry of the spin accumulation around the k-space equal-energy contours.

Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

KAUST Repository

Pattanasattayavong, Pichaya; Ndjawa, Guy Olivier Ngongang; Zhao, Kui; Chou, Kang Wei; Yaacobi-Gross, Nir; O'Regan, Brian C.; Amassian, Aram; Anthopoulos, Thomas D.

2013-01-01

The optical, structural and charge transport properties of solution-processed films of copper(i) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.

Low field critical currents and ac losses of thin film niobium--tin superconductors

International Nuclear Information System (INIS)

Howard, R.E.

1977-01-01

The results of a study of the low field critical current and ac loss properties of niobium-tin thin films and layered composites fabricated by electron-beam coevaporation are presented. Particular emphasis is placed upon determining the suitability of this material for use as a conductor in a superconducting power transmission line. Chapter I contains a summary of this work and its major results together with an introduction to the scientific and engineering concepts associated with a superconducting power transmission line. Chapter II is a discussion of the physics of current transport and the associated loss mechanisms in a type-II superconductor. Chapter III gives the details of the electron-beam coevaporation technique developed to fabricate the samples for this study. Also discussed in this chapter are the effects of the evaporation conditions on the growth morphology of the niobium-tin films. Chapter IV presents the details of the experimental techniques developed to measure the ac loss and critical current in these samples as a function of temperature. Chapter V shows the dependence of the critical current of these films and composites on temperature, magnetic field, and on the number of artificially introduced pinning centers in the layered composites. Experimental results are also presented concerning the stability of these conductors against flux jumps. Chapter VI is a discussion of the ac losses in these samples. Detailed comparisons are made between the measured loss and the predictions of the critical state model

Effect of double pinning mechanism in BSO-added GdBa2Cu3O7-x thin films

Energy Technology Data Exchange (ETDEWEB)

Oh, J. Y.; Jeon, H. K.; Kang, B. [Dept. of Physics, Chungbuk National University, Cheongju (Korea, Republic of); Lee, J. M.; Kang, W. N. [Dept. of Physics, Sungkyunkwan University, Suwon (Korea, Republic of)

2017-09-15

We investigated the effect of self-assembled BSO nano-defects as pinning centers in BSO-added GdBCO films when the thicknesses of films were varied. 3.5 vol. % BSO-added GdBCO films with varying thicknesses from 200 nm to 1000 nm were deposited on SrTiO3 (STO) substrate by using pulsed laser deposition (PLD) process. For the films with thicknesses of 400 nm and 600 nm, ‘anomaly shoulders’ in Jc - H characteristic curves were observed near the matching field. The anomaly shoulders appeared in the field dependence of Jc may be attributed to the existence of double pinning mechanisms in thin films. The fit to the pinning force density as a function of reduced field h (H/Hirr) using the Dew-Hughes’ scaling law shows that both the 400 nm- and the 600 nm-thick films have double pinning mechanisms while the other films have a single pinning mechanism. These results indicate that the self-assembled property of BSO result in different role as pinning centers with different thickness.

Synthesis, characterization of the pentacene and fabrication of pentacene field-effect transistors

International Nuclear Information System (INIS)

Tao Chunlan; Zhang Xuhui; Dong Maojun; Sun Shuo; Ou Guping; Zhang Fujia; Liu Yiyang; Zhang Haoli

2008-01-01

A comprehensive understanding of the organic semiconductor material pentacene is meaningful for organic field-effect transistors (OFETs). Thin films of pentacene are the most mobile molecular films known to date. This paper reported that the pentacene sample was successfully synthesized. The purity of pentacene is up to 95%. The results of a joint experimental investigation based on a combination of infrared absorption spectra, mass spectra (MS), element analysis, x-ray diffraction (XRD) and atom force microscopy (AFM). The authors fabricated OFET with the synthesized pentacene. Its field effect mobility is about 1.23 cm 2 /(V·s) and on-off ratio is above 10 6

Optical fiber magnetic field sensors with TbDyFe magnetostrictive thin films as sensing materials.

Science.gov (United States)

Yang, Minghong; Dai, Jixiang; Zhou, Ciming; Jiang, Desheng

2009-11-09

Different from usually-used bulk magnetostrictive materials, magnetostrictive TbDyFe thin films were firstly proposed as sensing materials for fiber-optic magnetic field sensing characterization. By magnetron sputtering process, TbDyFe thin films were deposited on etched side circle of a fiber Bragg Grating (FBG) as sensing element. There exists more than 45pm change of FBG wavelength when magnet field increase up to 50 mT. The response to magnetic field is reversible, and could be applicable for magnetic and current sensing.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sreenivas Puli, Venkata, E-mail: pvsri123@gmail.com [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Kumar Pradhan, Dhiren [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Gollapudi, Sreenivasulu [Department of Physics, Oakland University, Rochester, MI 48309-4401 (United States); Coondoo, Indrani [Department of Materials and Ceramic and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Panwar, Neeraj [Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan (India); Adireddy, Shiva; Chrisey, Douglas B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States)

2014-11-15

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO{sub 3} (BFO) thin films have been deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d{sub 33}) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO{sub 3} thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO{sub 3} thin films. • High magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO{sub 3} thin films. • A notable piezoelectric constant d{sub 33} ∼94 pm/V was found in BiFeO{sub 3} thin films.

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

Science.gov (United States)

Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

2018-06-06

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting

Quantum capacitance of an ultrathin topological insulator film in a magnetic field

KAUST Repository

Tahir, M.; Sabeeh, K.; Schwingenschlö gl, Udo

2013-01-01

We present a theoretical study of the quantum magnetocapacitance of an ultrathin topological insulator film in an external magnetic field. The study is undertaken to investigate the interplay of the Zeeman interaction with the hybridization between the upper and lower surfaces of the thin film. Determining the density of states, we find that the electron-hole symmetry is broken when the Zeeman and hybridization energies are varied relative to each other. This leads to a change in the character of the magnetocapacitance at the charge neutrality point. We further show that in the presence of both Zeeman interaction and hybridization the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high perpendicular magnetic field. In addition, we address the crossover from perpendicular to parallel magnetic field and find consistency with recent experimental data.

Quantum capacitance of an ultrathin topological insulator film in a magnetic field

KAUST Repository

Tahir, M.

2013-02-12

We present a theoretical study of the quantum magnetocapacitance of an ultrathin topological insulator film in an external magnetic field. The study is undertaken to investigate the interplay of the Zeeman interaction with the hybridization between the upper and lower surfaces of the thin film. Determining the density of states, we find that the electron-hole symmetry is broken when the Zeeman and hybridization energies are varied relative to each other. This leads to a change in the character of the magnetocapacitance at the charge neutrality point. We further show that in the presence of both Zeeman interaction and hybridization the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high perpendicular magnetic field. In addition, we address the crossover from perpendicular to parallel magnetic field and find consistency with recent experimental data.

Coupling of near-field thermal radiative heating and phonon Monte Carlo simulation: Assessment of temperature gradient in n-doped silicon thin film

International Nuclear Information System (INIS)

Wong, Basil T.; Francoeur, Mathieu; Bong, Victor N.-S.; Mengüç, M. Pinar

2014-01-01

Near-field thermal radiative exchange between two objects is typically more effective than the far-field thermal radiative exchange as the heat flux can increase up to several orders higher in magnitudes due to tunneling of evanescent waves. Such an interesting phenomenon has started to gain its popularity in nanotechnology, especially in nano-gap thermophotovoltaic systems and near-field radiative cooling of micro-/nano-devices. Here, we explored the existence of thermal gradient within an n-doped silicon thin film when it is subjected to intensive near-field thermal radiative heating. The near-field radiative power density deposited within the film is calculated using the Maxwell equations combined with fluctuational electrodynamics. A phonon Monte Carlo simulation is then used to assess the temperature gradient by treating the near-field radiative power density as the heat source. Results indicated that it is improbable to have temperature gradient with the near-field radiative heating as a continuous source unless the source comprises of ultra-short radiative pulses with a strong power density. - Highlights: • This study investigates temperature distribution in an n-doped silicon thin film. • Near-field radiative heating is treated as a volumetric phenomenon. • The temperature gradient is computed using phonon MC simulation. • Temperature of thin film can be approximated as uniform for radiation calculations. • If heat source is a pulsed radiation, a temperature gradient can be established

Oxygen incorporation effects in annealed epitaxial La(1-x)SrxMnO3 thin films

International Nuclear Information System (INIS)

Petrisor, T.; Gabor, M. S.; Tiusan, C.; Boulle, A.; Bellouard, C.; Pana, O.; Petrisor, T.

2011-01-01

This paper presents our results regarding oxygen incorporation effects in epitaxial La (1-x) Sr x MnO 3 thin films, deposited on SrTiO 3 (001) single crystal substrates, by annealing in different gas mixtures of argon and oxygen. A particular emphasis is placed on the correlation of structural properties with the magnetic properties of the films, Curie temperature, and coercive field. In this sense, we demonstrate that the evolution of the diffuse part of the ω-scans performed on the films are due to oxygen excess in the film lattice, which creates cationic vacancies within the films. Also, we show that two regimes of oxygen incorporation in the films exist, one in which the films evolve toward a single phase and oxygen stoichiometry is recovered, and a second one dominated by oxygen over-doping effects. In order to support our study, XPS measurements were performed, from which we have evaluated the Mn 3+ /Mn 4+ ionic ratio.

Effect of processor temperature on film dosimetry

International Nuclear Information System (INIS)

Srivastava, Shiv P.; Das, Indra J.

2012-01-01

Optical density (OD) of a radiographic film plays an important role in radiation dosimetry, which depends on various parameters, including beam energy, depth, field size, film batch, dose, dose rate, air film interface, postexposure processing time, and temperature of the processor. Most of these parameters have been studied for Kodak XV and extended dose range (EDR) films used in radiation oncology. There is very limited information on processor temperature, which is investigated in this study. Multiple XV and EDR films were exposed in the reference condition (d max. , 10 × 10 cm 2 , 100 cm) to a given dose. An automatic film processor (X-Omat 5000) was used for processing films. The temperature of the processor was adjusted manually with increasing temperature. At each temperature, a set of films was processed to evaluate OD at a given dose. For both films, OD is a linear function of processor temperature in the range of 29.4–40.6°C (85–105°F) for various dose ranges. The changes in processor temperature are directly related to the dose by a quadratic function. A simple linear equation is provided for the changes in OD vs. processor temperature, which could be used for correcting dose in radiation dosimetry when film is used.

Fluxon induced surface resistance and field emission in niobium films at 1.5 GHz

CERN Document Server

Benvenuti, Cristoforo; Darriulat, Pierre; Peck, M A; Valente, A M; Van't Hof, C A

2001-01-01

The surface resistance of superconducting niobium films induced by the presence of trapped magnetic flux, presumably in the form of a pinned fluxon lattice, is shown to be modified by the presence of a field emitting impurity or defect. The modification takes the form of an additional surface resistance proportional to the density of the fluxon lattice and increasing linearly with the amplitude of the microwave above a threshold significantly lower than the field emission threshold. Such an effect, a precursor of electron emission, is observed for the first time in a study using radiofrequency cavities operating at their fundamental 1.5 GHz frequency. The measured properties of the additional surface resistance severely constrain possible explanations of the observed effect. (23 refs).

Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

Energy Technology Data Exchange (ETDEWEB)

Melo, M.; Araújo, E. B., E-mail: eudes@dfq.feis.unesp.br [Departamento de Física e Química, Faculdade de Engenharia de Ilha Solteira, UNESP—Univ. Estadual Paulista, 15385-000 Ilha Solteira, SP (Brazil); Shvartsman, V. V. [Institute for Materials Science, University Duisburg-Essen, 45141 Essen (Germany); Shur, V. Ya. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Kholkin, A. L. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Department of Physics and CICECO—Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal)

2016-08-07

Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

Effect of Magnetic Field on Surface Morphology and Magnetic Properties of FeCu/Cu Nano layers Prepared by Electrodeposition Technique: Investigation of Magneto-hydrodynamic Effect

Directory of Open Access Journals (Sweden)

M. Merikhi

2015-10-01

Full Text Available In this paper, the effect of magnetic field on the morphology, structure and magnetic properties of electrodeposited FeCu/Cu thin films was investigated. The films were deposited on Au2PdAg/glass substrates using electrodeposition technique in potentiostatic control. The magnetic fields of 5000 and 7000 Oe were applied on deposition bath during deposition. Two series of thin films were prepared in the same deposition conditions, one in the presence and the other in absence of magnetic field and the products were compared. The results indicate that applying the magnetic field has a significant effect on the growth process, i.e. morphology, crystal structure and magnetic properties of the films. The morphology and structure of the FeCu/Cu Nano layers were studied using X-ray diffraction (XRD and scanning electron microscopy (SEM. The weight percentages of the elements in the deposited multilayers were determined by energy dispersive X-ray spectroscopy (EDS. Magnetic properties of thin films were studied using the vibrating sample magnetometer (VSM.

The effects of varying plasma parameters on silicon thin film growth by ECR plasma CVD

International Nuclear Information System (INIS)

Summers, S.; Reehal, H.S.; Shirkoohi, G.H.

2001-01-01

The technique of electron cyclotron resonance (ECR) plasma enhanced chemical vapour deposition (PECVD) is increasingly being used in electronic and photonic device applications. ECR offers a number of advantages including improved control of the deposition process, less damage to the growing film and the possibility of high deposition rates. ECR occurs in a plasma under appropriate magnetic and electric field conditions. In most cases, as in our system, this is achieved with a combination of 2.45 GHz microwave radiation and a 0.0875 T magnetic field, due to the use of standardized microwave supplies. We have studied the effects on silicon film growth of changing the magnetic field configuration to produce one or more planes of ECR within the system, and of changing the positions of the plane(s) relative to the deposition substrate. The films were grown in silane-hydrogen discharges. The magnetic field in our system was provided by two electromagnets. It was measured experimentally for a number of operating current values and then a detailed profile achieved by modelling using a proprietary software package. A process condition discharge under identical magnetic field configurations to growth was analysed by the use of a Langmuir probe and the results correlated with film properties determined by Raman spectroscopy and Dektak profilometry. (author)

Magnetic field-dependent polarization of (111)-oriented PZT–Co ferrite nanobilayer: Effect of Co ferrite composition

Energy Technology Data Exchange (ETDEWEB)

Khodaei, M. [Advanced Magnetic Materials Research Center, School of Metallurgy and Materials, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Faculty of Materials Science and Engineering, K. N. Toosi University of Technology, Tehran (Iran, Islamic Republic of); Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of); Seyyed Ebrahimi, S.A., E-mail: saseyyed@ut.ac.ir [Advanced Magnetic Materials Research Center, School of Metallurgy and Materials, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Jun Park, Yong [Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of); Son, Junwoo; Baik, Sunggi [Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)

2015-05-15

The perfect (111)-oriented PZT/CFO (CFO=CoFe{sub 2}O{sub 4}, Co{sub 0.8}Fe{sub 2.2}O{sub 4} and Co{sub 0.6}Mn{sub 0.2}Fe{sub 2.2}O{sub 4}) bilayer multiferroic thin films were grown on Pt(111)/Si substrate at 600 °C using pulsed laser deposition technique. The precision X-ray diffraction analysis (avoiding the shift of peak due to the sample misalignment) revealed that the CFO films on Pt(111)/Si substrate were under an out-of-plane contraction and deposition of PZT top layer led to more increase in the out-of-plane contraction, i.e. increase in the residual stresses. The PZT and CFO layers have significant effects on magnetic and ferroelectric properties of PZT/CFO bilayer films, respectively, leading to an enhanced in-plane magnetic anisotropy as well as increased and asymmetric polarization. The effect of composition of CFO layer on magnetic field-dependent polarization of PZT/CFO bilayer films was investigated by applying the magnetic field during P-E measurement. The polarization of PZT films were increased by applying the magnetic field as a result of strain transferred from magnetostrictive CFO underlayer. This increase in polarization for PZT/Co{sub 0.6}Mn{sub 0.2}Fe{sub 2.2}O{sub 4} was higher than that for PZT/Co{sub 0.8}Fe{sub 2.2}O{sub 4} and both of them were significantly higher than that for PZT/CoFe{sub 2}O{sub 4} bilayer film, which was discussed based on their magnetostriction properties. - Highlights: • The effect of composition of CFO on P–E characteristics of PZT/CFO films was investigated. • The polarization of PZT films were increased by applying the magnetic field. • The increasing polarization was a result of strain from magnetostrictive CFO underlayer.

Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

Science.gov (United States)

Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

2014-12-21

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

A theoretical investigation of the influence of the surface effect on the ferroelectric property of strained barium titanate film

Science.gov (United States)

Fang, Chao; Liu, Wei Hua

2017-07-01

The influence of the surface effect on the ferroelectric property of strained barium titanate film has been investigated. In this study, based on time-dependent Ginsburg-Landau-Devonshire thermodynamic theory, the surface effects have been simulated by introducing a surface constant, which leads to the strained BaTiO3 film consisting of inner tetragonal core and gradient lattice strain layer. Further, surface effects produce a depolarization field which has a dominant effect on the ferroelectric properties of the films. The spontaneous polarization, dielectric properties and ferroelectric hysteresis loop of BaTiO3 film are calculated under different boundary conditions. Theoretical and experimental results for strained BaTiO3 film are compared and discussed.

Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

Science.gov (United States)

Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

2016-08-01

We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

Enhanced solid-state order and field-effect hole mobility through control of nanoscale polymer aggregation

KAUST Repository

Chen, Mark S.

2013-12-26

Efficient charge carrier transport in organic field-effect transistors (OFETs) often requires thin films that display long-range order and close π-π packing that is oriented in-plane with the substrate. Although some polymers have achieved high field-effect mobility with such solid-state properties, there are currently few general strategies for controlling the orientation of π-stacking within polymer films. In order to probe structural effects on polymer-packing alignment, furan-containing diketopyrrolopyrrole (DPP) polymers with similar optoelectronic properties were synthesized with either linear hexadecyl or branched 2-butyloctyl side chains. Differences in polymer solubility were observed and attributed to variation in side-chain shape and polymer backbone curvature. Averaged field-effect hole mobilities of the polymers range from 0.19 to 1.82 cm2/V·s, where PDPP3F-C16 is the least soluble polymer and provides the highest maximum mobility of 2.25 cm2/V·s. Analysis of the films by AFM and GIXD reveal that less soluble polymers with linear side chains exhibit larger crystalline domains, pack considerably more closely, and align with a greater preference for in-plane π-π packing. Characterization of the polymer solutions prior to spin-coating shows a correlation between early onset nanoscale aggregation and the formation of films with highly oriented in-plane π-stacking. This effect is further observed when nonsolvent is added to PDPP3F-BO solutions to induce aggregation, which results in films with increased nanostructural order, in-plane π-π orientation, and field-effect hole mobilities. Since nearly all π-conjugated materials may be coaxed to aggregate, this strategy for enhancing solid-state properties and OFET performance has applicability to a wide variety of organic electronic materials. © 2013 American Chemical Society.

Enhanced solid-state order and field-effect hole mobility through control of nanoscale polymer aggregation

KAUST Repository

Chen, Mark S.; Lee, Olivia P.; Niskala, Jeremy R.; Yiu, Alan T.; Tassone, Christopher J.; Schmidt, Kristin; Beaujuge, Pierre M.; Onishi, Seita S.; Toney, Michael F.; Zettl, Alex K.; Frechet, Jean

2013-01-01

Efficient charge carrier transport in organic field-effect transistors (OFETs) often requires thin films that display long-range order and close π-π packing that is oriented in-plane with the substrate. Although some polymers have achieved high field-effect mobility with such solid-state properties, there are currently few general strategies for controlling the orientation of π-stacking within polymer films. In order to probe structural effects on polymer-packing alignment, furan-containing diketopyrrolopyrrole (DPP) polymers with similar optoelectronic properties were synthesized with either linear hexadecyl or branched 2-butyloctyl side chains. Differences in polymer solubility were observed and attributed to variation in side-chain shape and polymer backbone curvature. Averaged field-effect hole mobilities of the polymers range from 0.19 to 1.82 cm2/V·s, where PDPP3F-C16 is the least soluble polymer and provides the highest maximum mobility of 2.25 cm2/V·s. Analysis of the films by AFM and GIXD reveal that less soluble polymers with linear side chains exhibit larger crystalline domains, pack considerably more closely, and align with a greater preference for in-plane π-π packing. Characterization of the polymer solutions prior to spin-coating shows a correlation between early onset nanoscale aggregation and the formation of films with highly oriented in-plane π-stacking. This effect is further observed when nonsolvent is added to PDPP3F-BO solutions to induce aggregation, which results in films with increased nanostructural order, in-plane π-π orientation, and field-effect hole mobilities. Since nearly all π-conjugated materials may be coaxed to aggregate, this strategy for enhancing solid-state properties and OFET performance has applicability to a wide variety of organic electronic materials. © 2013 American Chemical Society.

Controllable deposition of gadolinium doped ceria electrolyte films by magnetic-field-assisted electrostatic spray deposition

International Nuclear Information System (INIS)

Ksapabutr, Bussarin; Chalermkiti, Tanapol; Wongkasemjit, Sujitra; Panapoy, Manop

2013-01-01

This paper describes a simple and low-temperature approach to fabrication of dense and crack-free gadolinium doped ceria (GDC) thin films with controllable deposition by a magnetic-field-assisted electrostatic spray deposition technique. The influences of external permanent magnets on the deposition of GDC films were investigated. The coating area deposited using two magnets with the same pole arrangement decreased in comparison with the case of no magnets, whereas the largest deposition area was obtained in the system of the opposite poles. Analysis of as-deposited films at 450 °C indicated the formation of uniform, smooth and dense thin films with a single-phase fluorite structure. The films produced in the system using same poles were thicker, smaller in crystallite size and smoother than those fabricated under other conditions. Additionally, the GDC film deposited using the same pole arrangement showed the maximum in electrical conductivity of about 2.5 × 10 −2 S/cm at a low operating temperature of 500 °C. - Highlights: • Magnetic-field-assisted electrostatic spray allows a controllable coating. • Dense, crack-free thin films were obtained at low process temperature of 450 °C. • Control of deposition, thickness and uniformity is easy to achieve simultaneously. • Films from the same pole were thicker, smaller in crystal size and smoother. • The maximum conductivity of doped ceria film was 2.5 × 10 −2 S/cm at 500 °C

Light Scattering Studies of Organic Field Effect Transistors

Science.gov (United States)

Adil, Danish

Organic semiconductors hold a great promise of enabling new technology based on low cost and flexible electronic devices. While much work has been done in the field of organic semiconductors, the field is still quite immature when compared to that of traditional inorganic based devices. More work is required before the full potential of organic field effect transistors (OFETs), organic light emitting diodes (OLEDs), and organic photovoltaics (OPVs) is realized. Among such work, a further development of diagnostic tools that characterize charge transport and device robustness more efficiently is required. Charge transport in organic semiconductors is limited by the nature of the metal-semiconductor interfaces where charge is injected into the semiconductor film and the semiconductor-dielectric interface where the charge is accumulated and transported. This, combined with that fact that organic semiconductors are especially susceptible to having structural defects induced via oxidation, charge transport induced damage, and metallization results in a situation where a semiconductor film's ability to conduct charge can degrade over time. This degradation manifests itself in the electrical device characteristics of organic based electronic devices. OFETs, for example, may display changes in threshold voltage, lowering of charge carrier mobilities, or a decrease in the On/Off ratio. All these effects sum together to result in degradation in device performance. The work begins with a study where matrix assisted pulsed laser deposition (MAPLE), an alternative organic semiconductor thin film deposition method, is used to fabricate OFETs with improved semiconductor-dielectric interfaces. MAPLE allows for the controlled layer-by-layer growth of the semiconductor film. Devices fabricated using this technique are shown to exhibit desirable characteristics that are otherwise only achievable with additional surface treatments. MAPLE is shown to be viable alternative to other

Light illumination effects in ambipolar FETs based on poly(3-hexylthiophene) and fullerene derivative composite films

International Nuclear Information System (INIS)

Shibao, Miho; Morita, Takeomi; Takashima, Wataru; Kaneto, Keiichi

2008-01-01

The effects of light illumination on field effect transistors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C 61 -butyric methyl ester (PCBM) composite films have been studied. It is found that the light illumination on pure P3HT and PCBM generally resulted in decrease of the threshold voltages and increase of the mobilities by a little. In the composite film at the PCBM contents of x = [P3HT] / ([P3HT] + [PCBM]) = 0.67 ∼ 0.9, an ambipolar field transport appeared. The light illumination effect was observed remarkably in the shift of threshold voltage for the hole generation at x = 0.75. Variations of Hole and electron mobilities and threshold voltage of electron generation upon light illumination were basically similar to those of the pure materials. The results were discussed in terms of the light assisted carrier generation in field effects

Probing the local microwave properties of superconducting thin films by a scanning microwave near-field microscope

CERN Document Server

Wu, L Y; Wang, K L; Jiang, T; Kang, L; Yang, S Z; Wu, P H

2002-01-01

In this paper, we present our approach to probe the local microwave properties of superconducting thin films by using the microwave near-field scanning technique. We have employed a coaxial cavity together with a niobium tip as the probe and established a scanning sample stage cooled by liquid nitrogen to study thin film devices at low temperature in our scanning microwave near-field microscope. Nondestructive images have been obtained on the inhomogeneity of the YBaCuO superconducting thin films at microwave frequency. We believe that these results would be helpful in evaluating the microwave performance of the devices.

A new correction method serving to eliminate the parabola effect of flatbed scanners used in radiochromic film dosimetry

Energy Technology Data Exchange (ETDEWEB)

Poppinga, D., E-mail: daniela.poppinga@uni-oldenburg.de; Schoenfeld, A. A.; Poppe, B. [Medical Radiation Physics, Carl v. Ossietzky University, Oldenburg 26127, Germany and Department for Radiation Oncology, Pius Hospital, Oldenburg 26121 (Germany); Doerner, K. J. [Radiotherapy Department, General Hospital, Celle 29223 (Germany); Blanck, O. [CyberKnife Center Northern Germany, Güstrow 18273, Germany and Department for Radiation Oncology, University Clinic Schleswig-Holstein, Lübeck 23562 (Germany); Harder, D. [Medical Physics and Biophysics, Georg-August-University, Göttingen 37073 (Germany)

2014-02-15

Purpose: The purpose of this study is the correction of the lateral scanner artifact, i.e., the effect that, on a large homogeneously exposed EBT3 film, a flatbed scanner measures different optical densities at different positions along thex axis, the axis parallel to the elongated light source. At constant dose, the measured optical densitiy profiles along this axis have a parabolic shape with significant dose dependent curvature. Therefore, the effect is shortly called the parabola effect. The objective of the algorithm developed in this study is to correct for the parabola effect. Any optical density measured at given position x is transformed into the equivalent optical density c at the apex of the parabola and then converted into the corresponding dose via the calibration of c versus dose. Methods: For the present study EBT3 films and an Epson 10000XL scanner including transparency unit were used for the analysis of the parabola effect. The films were irradiated with 6 MV photons from an Elekta Synergy accelerator in a RW3 slab phantom. In order to quantify the effect, ten film pieces with doses graded from 0 to 20.9 Gy were sequentially scanned at eight positions along thex axis and at six positions along the z axis (the movement direction of the light source) both for the portrait and landscape film orientations. In order to test the effectiveness of the new correction algorithm, the dose profiles of an open square field and an IMRT plan were measured by EBT3 films and compared with ionization chamber and ionization chamber array measurement. Results: The parabola effect has been numerically studied over the whole measuring field of the Epson 10000XL scanner for doses up to 20.9 Gy and for both film orientations. The presented algorithm transforms any optical density at positionx into the equivalent optical density that would be measured at the same dose at the apex of the parabola. This correction method has been validated up to doses of 5.2 Gy all over the

A new correction method serving to eliminate the parabola effect of flatbed scanners used in radiochromic film dosimetry

International Nuclear Information System (INIS)

Poppinga, D.; Schoenfeld, A. A.; Poppe, B.; Doerner, K. J.; Blanck, O.; Harder, D.

2014-01-01

Purpose: The purpose of this study is the correction of the lateral scanner artifact, i.e., the effect that, on a large homogeneously exposed EBT3 film, a flatbed scanner measures different optical densities at different positions along thex axis, the axis parallel to the elongated light source. At constant dose, the measured optical densitiy profiles along this axis have a parabolic shape with significant dose dependent curvature. Therefore, the effect is shortly called the parabola effect. The objective of the algorithm developed in this study is to correct for the parabola effect. Any optical density measured at given position x is transformed into the equivalent optical density c at the apex of the parabola and then converted into the corresponding dose via the calibration of c versus dose. Methods: For the present study EBT3 films and an Epson 10000XL scanner including transparency unit were used for the analysis of the parabola effect. The films were irradiated with 6 MV photons from an Elekta Synergy accelerator in a RW3 slab phantom. In order to quantify the effect, ten film pieces with doses graded from 0 to 20.9 Gy were sequentially scanned at eight positions along thex axis and at six positions along the z axis (the movement direction of the light source) both for the portrait and landscape film orientations. In order to test the effectiveness of the new correction algorithm, the dose profiles of an open square field and an IMRT plan were measured by EBT3 films and compared with ionization chamber and ionization chamber array measurement. Results: The parabola effect has been numerically studied over the whole measuring field of the Epson 10000XL scanner for doses up to 20.9 Gy and for both film orientations. The presented algorithm transforms any optical density at positionx into the equivalent optical density that would be measured at the same dose at the apex of the parabola. This correction method has been validated up to doses of 5.2 Gy all over the

A new correction method serving to eliminate the parabola effect of flatbed scanners used in radiochromic film dosimetry.

Science.gov (United States)

Poppinga, D; Schoenfeld, A A; Doerner, K J; Blanck, O; Harder, D; Poppe, B

2014-02-01

The purpose of this study is the correction of the lateral scanner artifact, i.e., the effect that, on a large homogeneously exposed EBT3 film, a flatbed scanner measures different optical densities at different positions along the x axis, the axis parallel to the elongated light source. At constant dose, the measured optical density profiles along this axis have a parabolic shape with significant dose dependent curvature. Therefore, the effect is shortly called the parabola effect. The objective of the algorithm developed in this study is to correct for the parabola effect. Any optical density measured at given position x is transformed into the equivalent optical density c at the apex of the parabola and then converted into the corresponding dose via the calibration of c versus dose. For the present study EBT3 films and an Epson 10000XL scanner including transparency unit were used for the analysis of the parabola effect. The films were irradiated with 6 MV photons from an Elekta Synergy accelerator in a RW3 slab phantom. In order to quantify the effect, ten film pieces with doses graded from 0 to 20.9 Gy were sequentially scanned at eight positions along the x axis and at six positions along the z axis (the movement direction of the light source) both for the portrait and landscape film orientations. In order to test the effectiveness of the new correction algorithm, the dose profiles of an open square field and an IMRT plan were measured by EBT3 films and compared with ionization chamber and ionization chamber array measurement. The parabola effect has been numerically studied over the whole measuring field of the Epson 10000XL scanner for doses up to 20.9 Gy and for both film orientations. The presented algorithm transforms any optical density at position x into the equivalent optical density that would be measured at the same dose at the apex of the parabola. This correction method has been validated up to doses of 5.2 Gy all over the scanner bed with 2D dose

Development of radiochromic film for spatially quantitative dosimetric analysis of indirect ionizing radiation fields

Science.gov (United States)

Brady, Samuel Loren

Two types of radiochromic films (RCF) were characterized for this work: EBT and XRQA film. Both films were investigated for: radiation interaction with film structure; light interaction with film structure for optimal film readout (densitometry) sensitivity; range of absorbed dose measurements; dependence of film dose measurement response as a function of changing radiation energy; fractionation and dose rate effects on film measurement response; film response sensitivity to ambient factors; and stability of measured film response with time. EBT film was shown to have the following properties: near water equivalent atomic weight (Zeff); dynamic dose range of 10 -1-102 Gy; 3% change in optical density (OD) response for a single exposure level when exposed to radiation energies from (75-18,000) kV; and best digitized using transmission densitometry. XRQA film was shown to have: a Zeff of ˜25; a 12 fold increase in sensitivity at lower photon energies for a dynamic dose range of 10-3-100 Gy, a difference of 25% in OD response when comparing 120 kV to 320 kV, and best digitized using reflective densitometry. Both XRQA and EBT films were shown to have: a temporal stability (DeltaOD) of ˜1% for t > 24 hr post film exposure for up to ˜20 days; a change in dose response of ˜0.03 mGy hr-1 when exposed to fluorescent room lighting at standard room temperature and humidity levels; a negligible dose rate and fractionation effect when operated within the optimal dose ranges; and a light wavelength dependence with dose for film readout. The flat bed scanner was chosen as the primary film digitizer due to its availability, cost, OD range, functionality (transmission and reflection scanning), and digitization speed. As a cost verses functionality comparison, the intrinsic and operational limitations were determined for two flat bed scanners. The EPSON V700 and 10000XL exhibited equal spatial and OD accuracy. The combined precision of both the scanner light sources and CCD

Study on the enhanced and stable field emission behavior of a novel electrosprayed Al-doped ZnO bilayer film

KAUST Repository

Mahmood, Khalid; Munir, Rahim; Swain, Bhabani Sankar; Han, Gill Sang; Kim, Byeong Jo; Jung, Hyun Suk

2014-01-01

A novel electrosprayed bilayer film composed of an over-layer (L 2) of aluminium-doped ZnO (AZO) nanoflakes (NF-AZO) and a under-layer (L1) of AZO nanocrystallites structure (NC-AZO) named BL:NF/NC-AZO is studied as an excellent field-emitter. The XRD pattern demonstrated that the doped bilayer film has preferential growth along the c-axis with hexagonal wurtzite structure and the (0 0 2) peak shifted toward the larger angle side after doping. The lowest turn-on field of ∼2.8 V μm-1, highest emission current density of 1.95 mA cm-2 is obtained for BL:NF/NC-AZO under the field of 6.8 V μm-1 and as well as the highest field enhancement factor (β) is estimated to be 4370 ± 3, compared to pure ZnO bilayer film (BL:NF/NC-ZnO) and also better than NC-AZO film and possesses the excellent long term stability of emission current. The PL intensity of doped ZnO bilayer film is very much stronger than pure ZnO bilayer structure. The superior field emission properties are attributed to the better morphologies, Al-doping and better crystallinity of bilayer AZO films. © 2014 The Royal Society of Chemistry.

Absolute and convective instabilities of a film flow down a vertical fiber subjected to a radial electric field

Science.gov (United States)

Liu, Rong; Chen, Xue; Ding, Zijing

2018-01-01

We consider the motion of a gravity-driven flow down a vertical fiber subjected to a radial electric field. This flow exhibits rich dynamics including the formation of droplets, or beads, driven by a Rayleigh-Plateau mechanism modified by the presence of gravity as well as the Maxwell stress at the interface. A spatiotemporal stability analysis is performed to investigate the effect of electric field on the absolute-convective instability (AI-CI) characteristics. We performed a numerical simulation on the nonlinear evolution of the film to examine the transition from CI to AI regime. The numerical results are in excellent agreement with the spatiotemporal stability analysis. The blowup behavior of nonlinear simulation predicts the formation of touchdown singularity of the interface due to the effect of electric field. We try to connect the blowup behavior with the AI-CI characteristics. It is found that the singularities mainly occur in the AI regime. The results indicate that the film may have a tendency to form very sharp tips due to the enhancement of the absolute instability induced by the electric field. We perform a theoretical analysis to study the behaviors of the singularities. The results show that there exists a self-similarity between the temporal and spatial distances from the singularities.

Size and dimensionality effects in superconducting Mo thin films

International Nuclear Information System (INIS)

Fabrega, L; Gil, O; Camon, A; Parra-BorderIas, M; Fernandez-MartInez, I; Costa-Kraemer, J L; Briones, F; Sese, J; Gonzalez-Arrabal, R

2011-01-01

Molybdenum is a low T c , type I superconductor whose fundamental properties are poorly known. Its importance as an essential constituent of new high performance radiation detectors, the so-called transition edge sensors (TESs) calls for better characterization of this superconductor, especially in thin film form. Here we report on a study of the basic superconducting features of Mo thin films as a function of their thickness. The resistivity is found to rise and the critical temperature decreases on decreasing film thickness, as expected. More relevant, the critical fields along and perpendicular to the film plane are markedly different, thickness dependent and much larger than the thermodynamic critical field of Mo bulk. These results are consistent with a picture of type II 2D superconducting films, and allow estimates of the fundamental superconducting lengths of Mo. The role of morphology in determining the 2D and type II character of the otherwise type I molybdenum is discussed. The possible consequences of this behaviour on the performance of radiation detectors are also addressed.

Population-based mammography screening: comparison of screen-film and full-field digital mammography with soft-copy reading--Oslo I study.

Science.gov (United States)

Skaane, Per; Young, Kari; Skjennald, Arnulf

2003-12-01

To compare screen-film and full-field digital mammography with soft-copy reading in a population-based screening program. Full-field digital and screen-film mammography were performed in 3,683 women aged 50-69 years. Two standard views of each breast were acquired with each modality. Images underwent independent double reading with use of a five-point rating scale for probability of cancer. Recall rates and positive predictive values were calculated. Cancer detection rates determined with both modalities were compared by using the McNemar test for paired proportions. Retrospective side-by-side analysis for conspicuity of cancers was performed by an external independent radiologist group with experience in both modalities. In 3,683 cases, 31 cancers were detected. Screen-film mammography depicted 28 (0.76%) malignancies, and full-field digital mammography depicted 23 (0.62%) malignancies. The difference between cancer detection rates was not significant (P =.23). The recall rate for full-field digital mammography (4.6%; 168 of 3,683 cases) was slightly higher than that for screen-film mammography (3.5%; 128 of 3,683 cases). The positive predictive value based on needle biopsy results was 46% for screen-film mammography and 39% for full-field digital mammography. Side-by-side image comparison for cancer conspicuity led to classification of 19 cancers as equal for probability of malignancy, six cancers as slightly better demonstrated at screen-film mammography, and six cancers as slightly better demonstrated at full-field digital mammography. There was no statistically significant difference in cancer detection rate between screen-film and full-field digital mammography. Cancer conspicuity was equal with both modalities. Full-field digital mammography with soft-copy reading is comparable to screen-film mammography in population-based screening.

Thermal pulse measurements of space charge distributions under an applied electric field in thin films

International Nuclear Information System (INIS)

Zheng, Feihu; An, Zhenlian; Zhang, Yewen; Liu, Chuandong; Lin, Chen; Lei, Qingquan

2013-01-01

The thermal pulse method is a powerful method to measure space charge and polarization distributions in thin dielectric films, but a complicated calibration procedure is necessary to obtain the real distribution. In addition, charge dynamic behaviour under an applied electric field cannot be observed by the classical thermal pulse method. In this work, an improved thermal pulse measuring system with a supplemental circuit for applying high voltage is proposed to realize the mapping of charge distribution in thin dielectric films under an applied field. The influence of the modified measuring system on the amplitude and phase of the thermal pulse response current are evaluated. Based on the new measuring system, an easy calibration approach is presented with some practical examples. The newly developed system can observe space charge evolution under an applied field, which would be very helpful in understanding space charge behaviour in thin films. (paper)

Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Azadeh Jafari

2014-07-01

Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

Ferrofluid thin films as optical gaussmeters proposed for field and ...

Indian Academy of Sciences (India)

Department of Physics, Cochin University of Science and Technology, Cochin 682 022, India ... Magnetic field induced laser transmission through these ... An optical gaussmeter can be formulated with these ferrofluid thin films with the help of an LDR, and a laser (a diode laser or a cheaper torch laser which gives a stream ...

Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance

Science.gov (United States)

Longtin, Rémi; Sanchez-Valencia, Juan Ramon; Shorubalko, Ivan; Furrer, Roman; Hack, Erwin; Elsener, Hansrudolf; Gröning, Oliver; Greenwood, Paul; Rupesinghe, Nalin; Teo, Kenneth; Leinenbach, Christian; Gröning, Pierangelo

2015-02-01

The joining of macroscopic films of vertically aligned multiwalled carbon nanotubes (CNTs) to titanium substrates is demonstrated by active vacuum brazing at 820 °C with a Ag-Cu-Ti alloy and at 880 °C with a Cu-Sn-Ti-Zr alloy. The brazing methodology was elaborated in order to enable the production of highly electrically and thermally conductive CNT/metal substrate contacts. The interfacial electrical resistances of the joints were measured to be as low as 0.35 Ω. The improved interfacial transport properties in the brazed films lead to superior electron field-emission properties when compared to the as-grown films. An emission current of 150 μA was drawn from the brazed nanotubes at an applied electric field of 0.6 V μm-1. The improvement in electron field-emission is mainly attributed to the reduction of the contact resistance between the nanotubes and the substrate. The joints have high re-melting temperatures up to the solidus temperatures of the alloys; far greater than what is achievable with standard solders, thus expanding the application potential of CNT films to high-current and high-power applications where substantial frictional or resistive heating is expected.

Modification of C60/C70+Pd film structure under electric field influence during electron emission

International Nuclear Information System (INIS)

Czerwosz, E.; Dluzewski, P.; Kozlowski, M.

2001-01-01

We investigated the modification of structure of C 60 /C 70 +Pd films during cold electron emission from these films. Films were obtained by vacuum thermal deposition from two sources and were characterised before and after electron emission measurements by transmission electron microscopy and electron diffraction. Films were composed of nanocrystalline Pd objects dispersed in carbon/fullerenes matrix. I-V characteristics for electron emission were obtained in diode geometry with additionally applied voltage along the film surface. The modification of film structure occurred under applied electric field and the grouping of Pd nano crystals into bigger objects was observed

Surface free energy of CrN x films deposited using closed field unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Sun, C.-C.; Lee, S.-C.; Dai, S.-B.; Fu, Y.-S.; Wang, Y.-C.; Lee, Y.-H.

2006-01-01

CrN x thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrN x films at temperatures in the range 20-170 deg. C. In this study CrN x thin films with CrN, Cr(N), Cr 2 N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr +2 emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 deg. C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrN x films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrN x film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 deg. C. This is lower than that of Cr(N), Cr 2 N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrN x films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness

Effects of No-tillage Combined with Reused Plastic Film Mulching on Maize Yield and Irrigation Water Productivity

OpenAIRE

SU Yong-zhong; ZHANG Ke; LIU Ting-na; WANG Ting

2016-01-01

A field experiment was conducted to determine the effects of reused plastic film mulching and no-tillage on maize yield and irriga-tion water productivity(IWP) in the marginal oasis in the middle of Hexi Corridor region of northwestern China. The aim is to provide an alternative tillage and cultivation pattern for reducing plastic film pollution, saving cost and increasing income, and improving resource use efficiency. The field experiment was carried out in three soils with different texture...

Effects of geometry on slot-jet film cooling performance

Energy Technology Data Exchange (ETDEWEB)

Hyams, D.G.; McGovern, K.T.; Leylek, J.H. [Clemson Univ., SC (United States)

1995-10-01

The physics of the film cooling process for shaped, inclined slot-jets with realistic slot-length-to-width ratios (L/s) is studied for a range of blowing ratio (M) and density ratio (DR) parameters typical of gas turbine operations. For the first time in the open literature, the effect of inlet and exit shaping of the slot-jet on both flow and thermal field characteristics is isolated, and the dominant mechanisms responsible for differences in these characteristics are documented. A previously documented computational methodology was applied for the study of four distinct configurations: (1) slot with straight edges and sharp corners (reference case); (2) slot with shaped inlet region; (3) slot with shaped exit region; and (4) slot with both shaped inlet and exit regions. Detailed field results as well as surface phenomena involving adiabatic film effectiveness ({eta}) and heat transfer coefficient (h) are presented. It is demonstrated that both {eta} and h results are vital in the proper assessment of film cooling performance. All simulations were carried out using a multi-block, unstructured/adaptive grid, fully explicit, time-marching solver with multi-grid, local time stepping, and residual smoothing type acceleration techniques. Special attention was paid to and full documentation provided for: (1) proper modeling of the physical phenomena; (2) exact geometry and high quality grid generation techniques; (3) discretization schemes; and (4) turbulence modeling issues. The key parameters M and DR were varied from 1.0 to 2.0 and 1.5 to 2.0, respectively, to show their influence. Simulations were repeated for slot length-to-width ratio (L/s) of 3.0 and 4.5 in order to explain the effects of this important parameter. Additionally, the performance of two popular turbulence models, standard k-F, and RNG k-E, were studied to establish their ability to handle highly elliptic jet/crossflow interaction type processes.

Ferroelectric-gate field effect transistor memories device physics and applications

CERN Document Server

Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

2016-01-01

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

Passivation Effects in Copper Thin Films

International Nuclear Information System (INIS)

Wiederhirn, G.; Nucci, J.; Richter, G.; Arzt, E.; Balk, T. J.; Dehm, G.

2006-01-01

We studied the influence of a 10 nm AlxOy passivation on the stress-temperature behavior of 100 nm and 1 μm thick Cu films. At low temperatures, the passivation induces a large tensile stress increase in the 100 nm film; however, its effect on the 1 μm film is negligible. At high temperatures, the opposite behavior is observed; while the passivation does not change the 100 nm film behavior, it strengthens the 1 μm film by driving it deeper into compression. These observations are explained in light of a combination of constrained diffusional creep and dislocation dynamics unique to ultra-thin films

The Field Emission Properties of Graphene Aggregates Films Deposited on Fe-Cr-Ni alloy Substrates

Directory of Open Access Journals (Sweden)

Zhanling Lu

2010-01-01

Full Text Available The graphene aggregates films were fabricated directly on Fe-Cr-Ni alloy substrates by microwave plasma chemical vapor deposition system (MPCVD. The source gas was a mixture of H2 and CH4 with flow rates of 100 sccm and 12 sccm, respectively. The micro- and nanostructures of the samples were characterized by Raman scattering spectroscopy, field emission scanning electron microscopy (SEM, and transparent electron microscopy (TEM. The field emission properties of the films were measured using a diode structure in a vacuum chamber. The turn-on field was about 1.0 V/m. The current density of 2.1 mA/cm2 at electric field of 2.4 V/m was obtained.

Magnetization reversal in ferromagnetic film through solitons by electromagnetic field

International Nuclear Information System (INIS)

Veerakumar, V.; Daniel, M.

2001-07-01

We study the reversal of magnetization in an isotopic ferromagnetic film free from charges by exposing it to a circularly polarized electromagnetic (EM) field. The magnetization excitations are obtained in the form of line and lump solitons of the completely integrable modified KP-II equation which is derived using a reductive perturbation method from the set of coupled Landau-Lifschitz and Maxwell equations. It is observed that when the polarization of the EM-field is reversed followed by a rotation, for every (π)/2-degrees, the magnetization is reversed. (author)

Photo-excited charge collection spectroscopy probing the traps in field-effect transistors

CERN Document Server

Im, Seongil; Kim, Jae Hoon

2013-01-01

Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materia...

Unsteady three dimensional flow of Casson liquid film over a porous stretching sheet in the presence of uniform transverse magnetic field and suction/injection

Energy Technology Data Exchange (ETDEWEB)

Maity, S., E-mail: susantamaiti@gmail.com [Department of Mathematics, National Institute of Technology, Arunachal Pradesh, Yupia, Papumpare 791112 (India); Singh, S.K. [Engineering Mechanics Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Kumar, A.V. [Department of Mathematics, National Institute of Technology, Arunachal Pradesh, Yupia, Papumpare 791112 (India)

2016-12-01

Three dimensional flow of thin Casson liquid film over a porous unsteady stretching sheet is investigated under assumption of initial uniform film thickness. The effects of the uniform transverse magnetic field, suction and injection are also considered for investigation. The nonlinear governing set of equations and film evolution equation are solved analytically by using singular perturbation technique. It is found that the film thickness decreases with the increasing values of the Casson parameter. The Hartmann number and porosity parameter resist the film thinning process. It is also observed that the film thickness increases with the increasing values of the suction velocity whereas it decreases for increasing values of the injection velocity at the stretching surface.

The effect of NaCl on room-temperature-processed indium oxide nanoparticle thin films for printed electronics

Energy Technology Data Exchange (ETDEWEB)

Häming, M., E-mail: Marc.Haeming@yahoo.de [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Baby, T.T. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Garlapati, S.K. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Technische Universität Darmstadt, KIT-TUD Joint Research Laboratory for Nanomaterials, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Krause, B. [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Hahn, H. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Technische Universität Darmstadt, KIT-TUD Joint Research Laboratory for Nanomaterials, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Karlsruhe Institute of Technology (KIT), Helmholtz Institute Ulm, Albert-Einstein-Allee 11, 89081 Ulm (Germany); Dasgupta, S. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology, 76344 Eggenstein-Leopoldshafen (Germany); Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Weinhardt, L.; Heske, C. [Karlsruhe Institute of Technology (KIT), Institute for Photon Science and Synchrotron Radiation (IPS), D-76344 Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Institute for Chemical Technology and Polymer Chemistry (ITCP), 76128 Karlsruhe (Germany); University of Nevada, Las Vegas (UNLV), Department of Chemistry and Biochemistry, Las Vegas, NV 89154-4003 (United States)

2017-02-28

Highlights: • The effect of NaCl ink additive on indium oxide nanoparticle thin films is analyzed. • NaCl changes the thin film morphology and its chemical structure. • NaCl decomposes the nanoparticle shell leading to lower charge transport barriers. • Explanation of the increase in field effect mobility from 1 to >12 cm{sup 2}/Vs. • Understanding of the ink drying process and the nanoparticle agglomeration behavior. - Abstract: One of the major challenges in flexible electronics industry is the fabrication of high-mobility field-effect transistors (FETs) at ambient conditions and on inexpensive polymer substrates compatible with roll-to-roll printing technology. In this context, a novel and general route towards room-temperature fabrication of printed FETs with remarkably high field-effect mobility (μ{sub FET}) above 12 cm{sup 2}/Vs has recently been developed. A detailed understanding of the chemical structure of the involved nanoparticle (NP) thin films, prepared by chemical flocculation, is essential for further optimization of the charge transport properties of such devices. In this study, we thus analyze indium oxide NP thin films with and without NaCl additive using x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). It is demonstrated that the introduction of a sodium chloride additive to the ink leads to a strongly altered film morphology and a modification of the NP shell. The results suggest that, as a consequence of the additive, the charge-transport barriers between individual indium oxide NPs are lowered, facilitating long-range charge percolation paths despite the presence of a significant concentration of carbonaceous residues.

Field geometry dependence of magnetotransport in epitaxial La2/3Ca1/3MnO3 thin films

International Nuclear Information System (INIS)

Saldarriaga, W.; Baca, E.; Prieto, P.; Moran, O.; Grube, K.; Fuchs, D.; Schneider, R.

2006-01-01

In-plane and out-of-plane magnetoresistance measurements on epitaxial ∼200nm thin (001)-oriented films of high oxygen pressure DC-sputtering grown manganite La 2/3 Ca 1/3 MnO 3 were carried out. Single crystal (001)-SrTiO 3 substrates were used. The samples featured a Curie temperature T C ∼260K and a magnetic moment μ(T->0K)∼3μ B per Mn atom. Magnetocrystalline anisotropy with the easy axes lying on film plane was evidenced by recording the in-plane and out-of-plane magnetization loops at temperatures, below T C , in magnetic field strengths up to 5T. Evidence for anisotropic magnetotransport in these films was provided by electric measurements in a wide temperature range up to 6T magnetic field strengths applied both perpendicular and parallel to the film plane. In both applied magnetic field geometries, current and magnetic field were maintained perpendicular to each other. Neither low-field magnetoresistance nor large magnetoresistance hysteresis were observed on these samples, suggesting that the tensile strain imposed by the substrate in the first monolayers has partially been released. In addition, by rotating the sample 360 o around an axis parallel to film plane, in magnetic fields >=2T, a quadratic sinusoidal dependence of the magnetoresistance on the polar angle θ was observed. These results can be consistently interpreted using a generalized version of the theory of anisotropic magnetoresistance in transition-metal ferromagnets

Effect of active layer deposition temperature on the performance of sputtered amorphous In—Ga—Zn—O thin film transistors

International Nuclear Information System (INIS)

Wu Jie; Shi Junfei; Dong Chengyuan; Chen Yuting; Zhou Daxiang; Hu Zhe; Zhan Runze; Zou Zhongfei

2014-01-01

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ''optimized-annealed'' are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150 °C while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and O1s spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films. Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature. (semiconductor devices)

High dose per fraction dosimetry of small fields with Gafchromic EBT2 film

International Nuclear Information System (INIS)

Hardcastle, Nicholas; Basavatia, Amar; Bayliss, Adam; Tome, Wolfgang A.

2011-01-01

Purpose: Small field dosimetry is prone to uncertainties due to the lack of electronic equilibrium and the use of the correct detector size relative to the field size measured. It also exhibits higher sensitivity to setup errors as well as large variation in output with field size and shape. Radiochromic film is an attractive method for reference dosimetry in small fields due to its ability to provide 2D dose measurements while having minimal impact on the dose distribution. Gafchromic EBT2 has a dose range of up to 40 Gy; therefore, it could potentially be useful for high dose reference dosimetry with high spatial resolution. This is a requirement in stereotactic radiosurgery deliveries, which deliver high doses per fraction to small targets. Methods: Targets of 4 mm and 12 mm diameters were treated to a minimum peripheral dose of 21 Gy prescribed to 80% of the maximum dose in one fraction. Target doses were measured with EBT2 film (both targets) and an ion chamber (12 mm target only). Measured doses were compared with planned dose distributions using profiles through the target and minimum peripheral dose coverage. Results: The measured target doses and isodose coverage agreed with the planned dose within ±1 standard deviation of three measurements, which were 2.13% and 2.5% for the 4 mm and 12 mm targets, respectively. Conclusions: EBT2 film is a feasible dosimeter for high dose per fraction reference 2D dosimetry.

Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties

Science.gov (United States)

Elovaara, Tomi; Huhtinen, Hannu; Majumdar, Sayani; Paturi, Petriina

2016-09-01

We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 109% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential.

Use of plastic films for weed control during field establishment of micropropagated hardwoods

Science.gov (United States)

J. W. Van Sambeek; John E. Preece; Carl A. Huetteman; Paul L. Roth

1995-01-01

This study compares the use of plastic films to conventional methods for establishing hardwoods on a recently cultivated old field site using 1-year-old micropropagated plantlets of white ash (Fraxinus americana L.) and silver maple (Acer saccharinum L.). After one growing season in the field, height of plantlets with all weed...

Characterization of an extrapolation chamber and radiochromic films for verifying the metrological coherence among beta radiation fields

International Nuclear Information System (INIS)

Castillo, Jhonny Antonio Benavente

2011-01-01

The metrological coherence among standard systems is a requirement for assuring the reliability of dosimetric quantities measurements in ionizing radiation field. Scientific and technologic improvements happened in beta radiation metrology with the installment of the new beta secondary standard BSS2 in Brazil and with the adoption of the internationally recommended beta reference radiations. The Dosimeter Calibration Laboratory of the Development Center for Nuclear Technology (LCD/CDTN), in Belo Horizonte, implemented the BSS2 and methodologies are investigated for characterizing the beta radiation fields by determining the field homogeneity, the accuracy and uncertainties in the absorbed dose in air measurements. In this work, a methodology to be used for verifying the metrological coherence among beta radiation fields in standard systems was investigated; an extrapolation chamber and radiochromic films were used and measurements were done in terms of absorbed dose in air. The reliability of both the extrapolation chamber and the radiochromic film was confirmed and their calibrations were done in the LCD/CDTN in 90 Sr/ 90 Y, 85 Kr and 147 Pm beta radiation fields. The angular coefficients of the extrapolation curves were determined with the chamber; the field mapping and homogeneity were obtained from dose profiles and isodose with the radiochromic films. A preliminary comparison between the LCD/CDTN and the Instrument Calibration Laboratory of the Nuclear and Energy Research Institute / Sao Paulo (LCI/IPEN) was carried out. Results with the extrapolation chamber measurements showed in terms of absorbed dose in air rates showed differences between both laboratories up to de -I % e 3%, for 90 Sr/ 90 Y, 85 Kr and 147 Pm beta radiation fields, respectively. Results with the EBT radiochromic films for 0.1, 0.3 and 0.15 Gy absorbed dose in air, for the same beta radiation fields, showed differences up to 3%, -9% and -53%. The beta radiation field mappings with

Effect of film size on drainage of foam and emulsion films

International Nuclear Information System (INIS)

Malhotra, A.K.; Wasan, D.T.

1987-01-01

All available theoretical analyses for the drainage of thin plane-parallel liquid films, such as those existing between two approaching liquid droplets or bubbles in the coalescence process, predict essentially the same dependence of rate of thinning of the intervening film on its size as is described by the Reynolds equation - that is, drainage time increases with the square of the film radius. Recently, the authors reported experimental data for both foam and emulsion films which showed that the measured drainage times increase with about a 0.8 power of the film radius, a value much smaller than the theoretically predicted value of 2.0. Here they present a hydrodynamic analysis to predict the experimentally observed effect of film size on the kinetics of thinning of emulsion and foam films. They extend the applicability of the Reynolds model by accounting for the flow in the Plateau borders as well as the London-van der Waals forces in the thin film phase. Their theoretical predictions are in good agreement with the experimental data on the dependence of drainage time of both foam and emulsion films on their radii

Organic field-effect transistors using single crystals

International Nuclear Information System (INIS)

Hasegawa, Tatsuo; Takeya, Jun

2009-01-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

Intrinsic hydrogen-terminated diamond as ion-sensitive field effect transistor

Czech Academy of Sciences Publication Activity Database

Rezek, Bohuslav; Shin, D.; Watanabe, H.; Nebel, C.E.

2007-01-01

Roč. 122, - (2007), s. 596-599 ISSN 0925-4005 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond film * surface electronic properties * field effect transistor * pH sensor * semiconductor-electrolyte interface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.934, year: 2007

Effect on High-Intensity Fields of a Tough Hydrophone With Hydrothermal PZT Thick-Film Vibrator and Titanium Front Layer.

Science.gov (United States)

Okada, Nagaya; Takeuchi, Shinichi

2017-07-01

A novel tough hydrophone was fabricated by depositing hydrothermally synthesized lead zirconate titanate polycrystalline film on the back-side surface of a titanium plate. Our developed tough hydrophone resisted damage in a high-pressure field (15 MPa) at a focal point of a sinusoidal continuous wave driven by a concave high-intensity focused ultrasound (HIFU) transducer with up to 50 W of power input to the sound source. The hydrophone was suitable for the HIFU field, even though the hydrophone has a flat-shape tip of 3.5 mm diameter, which is slightly larger than the wavelength of a few megahertz. In this paper, experiments are performed to assess the effect on the HIFU field of changing the shape of the tough hydrophone, with the aim of developing a tough hydrophone. The spatial distribution of the acoustic bubbles around the focal point was visualized by using ultrasonic diagnostic equipment with the tough hydrophone located at the focal point of the HIFU transducer. From the visualization, the trapped acoustic bubbles were seen to arise from the standing wave, which implies that the acoustic pressure is reduced by this cloud of acoustic bubbles that appeared during hydrophone measurement. Although cavitation and acoustic bubbles may be unavoidable when using high-intensity ultrasound, the estimated result of evaluating acoustic fields without misunderstanding by acoustic bubbles can be obtained by the aid of visualizing bubbles around the tough hydrophone.

Critical current density of MgB2 thin films and the effect of interface pinning

International Nuclear Information System (INIS)

Choi, Eun-Mi; Gupta, S K; Sen, Shashwati; Lee, Hyun-Sook; Kim, Hyun-Jung; Lee, Sung-Ik

2004-01-01

Preferentially oriented MgB 2 thin films with c-axis normal to the surface have been prepared and characterized for microstructure and transport properties. The magnetic field dependence of superconducting critical current density J c has been determined from the magnetization hysteresis (M-H) loops at various temperatures using the Bean's critical state model. High J c of these films show their potential for applications. We have also measured the angular dependences of J c . The angular dependence is seen to be in agreement with the anisotropic Ginzburg-Landau model except that at angles close to the ab plane, increased pinning due to film-substrate interaction is observed. The angular range where interface pinning is effective has been determined by measurement of asymmetry in dissipation on reversal of current for fields applied at angles close to the ab plane

A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Jamshidian, M., E-mail: jamshidian@cc.iut.ac.ir [Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstrasse 15, 99423 Weimar (Germany); Thamburaja, P., E-mail: prakash.thamburaja@gmail.com [Department of Mechanical & Materials Engineering, Universiti Kebangsaan Malaysia (UKM), Bangi 43600 (Malaysia); Rabczuk, T., E-mail: timon.rabczuk@tdt.edu.vn [Division of Computational Mechanics, Ton Duc Thang University, Ho Chi Minh City (Viet Nam); Faculty of Civil Engineering, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)

2016-12-15

A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.

Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

International Nuclear Information System (INIS)

Lee, Kyuha; Kim, A-Young; Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young; Lee, Joong Kee

2014-01-01

Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO 4 salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode

Effects of ferroelectric-poling-induced strain on the electronic transport and magnetic properties of (001)- and (111)-oriented La{sub 0.5}Ba{sub 0.5}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Li, X.Y. [Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zheng, M.; Zhu, Q.X.; Yang, M.M.; Li, X.M.; Shi, X. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Yuan, G.L., E-mail: yuanguoliang@mail.njust.edu.cn [Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Wang, Y.; Chan, H.L.W. [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Li, X.G. [Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Luo, H.S. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zheng, R.K., E-mail: zrk@ustc.edu [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

2014-04-01

We epitaxially grew La{sub 0.5}Ba{sub 0.5}MnO{sub 3} (LBMO) films on (001)- and (111)-oriented ferroelectric single-crystal substrates and reduced the in-plane tensile strain of LBMO films by poling the ferroelectric substrates along the 〈001〉 or 〈111〉 direction. Upon poling, a large decrease in the resistance and a considerable increase in the magnetization, Curie temperature, and magnetoresistance were observed for the LBMO film, which are driven by interface strain coupling. Such strain effects can be significantly enhanced by the application of a magnetic field. An overall analysis of the findings reveals that the mutual interaction between the strain and the magnetic field is mediated by the electronic phase separation which is sensitive to both strain and magnetic field. Our findings highlight that the electronic phase separation is crucial in understanding the electric-field-manipulated strain effects in manganite film/ferroelectric crystal heterostructures. - Highlights: • La{sub 0.5}Ba{sub 0.5}MnO{sub 3} films were epitaxially grown on ternary ferroelectric single crystals. • Ferroelectric poling modifies the strain and physical properties of films. • Magnetic field enhances the strain effects of films. • Phase separation is crucial to understand the magnetic-field-tuned strain effect.

Measurements of Hk and Ms in thin magnetic films by the angular dependence of the planar Hall effect

Science.gov (United States)

Vatskicheva, M.; Vatskichev, L.

1987-11-01

It is shown that the angular dependences of the planar Hall effect measured with infinite magnetic field and with magnetic field H⩾ Hk have an intersection point and this fact is enough for measuring the anisotropy field Hk applying the method presented by Pastor, Ferreiro and Torres in J. Magn. Magn. Mat. 53 (1986) 349, 62 (1986) 101. The scaling of the Hall tension U proportional to M2s in mV/Am -1 gives a possibility for calculating the Ms-values of the films. These assumptions are verified for NiFe- and NiFeGe films with a uniaxial magnetic anisotropy.

Enhancement of grain size and crystallinity of thin layers of pentacene grown under magnetic field

Energy Technology Data Exchange (ETDEWEB)

Tabata, Kenichi [Division of Materials Science, Faculty of pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Yamamoto, Yohei, E-mail: yamamoto@ims.tsukuba.ac.jp [Division of Materials Science, Faculty of pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science (TIMS), Faculty of pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Center for Integrated Research in Fundamental Science and Technology (CiRfSE), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

2016-03-31

Field-effect mobilities (μ) of pentacene films, prepared by a thermal deposition under a magnetic field (H-field), were largely enhanced, in comparison with that prepared without an H-field. Under a perpendicular H-field with respect to the substrate surface, the crystallinity of the edge-on pentacene orientation is enhanced, resulting in the 9-fold enhancement of μ. Furthermore, under parallel H-field with respect to the substrate surface, μ of the pentacene films were 23-fold greater than that prepared without the H-field. The surface morphology studies by atomic force microscopy of the ultra thin films of pentacene clarified that the grain size of the pentacene at the interface with the substrate is larger for films under parallel H-field than that prepared without an H-field. The simple and effective method for enhancing the semiconducting properties of the organic thin films gives high technological impact in its application to organic electronics. - Highlights: • Magnetic-field effect on the crystallinity of pentacene thin films • Magnetic-field effect on the morphology of pentacene thin films • Enhanced field-effect charge carrier mobility of pentacene thin films.

Enhancement of grain size and crystallinity of thin layers of pentacene grown under magnetic field

International Nuclear Information System (INIS)

Tabata, Kenichi; Yamamoto, Yohei

2016-01-01

Field-effect mobilities (μ) of pentacene films, prepared by a thermal deposition under a magnetic field (H-field), were largely enhanced, in comparison with that prepared without an H-field. Under a perpendicular H-field with respect to the substrate surface, the crystallinity of the edge-on pentacene orientation is enhanced, resulting in the 9-fold enhancement of μ. Furthermore, under parallel H-field with respect to the substrate surface, μ of the pentacene films were 23-fold greater than that prepared without the H-field. The surface morphology studies by atomic force microscopy of the ultra thin films of pentacene clarified that the grain size of the pentacene at the interface with the substrate is larger for films under parallel H-field than that prepared without an H-field. The simple and effective method for enhancing the semiconducting properties of the organic thin films gives high technological impact in its application to organic electronics. - Highlights: • Magnetic-field effect on the crystallinity of pentacene thin films • Magnetic-field effect on the morphology of pentacene thin films • Enhanced field-effect charge carrier mobility of pentacene thin films

Enhanced tunability of electrical and magnetic properties in (La,Sr)MnO3 thin films via field-assisted oxygen vacancy modulation

Science.gov (United States)

Wong, Hon Fai; Ng, Sheung Mei; Cheng, Wang Fai; Liu, Yukuai; Chen, Xinxin; von Nordheim, Danny; Mak, Chee Leung; Dai, Jiyan; Ploss, Bernd; Leung, Chi Wah

2017-12-01

We investigated the tunability of the transport and magnetic properties in 7.5 nm La0.7Sr0.3MnO3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature TC of the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift TC by more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.

Science.gov (United States)

Qi, Qiong; Yu, Aifang; Wang, Liangmin; Jiang, Chao

2010-11-01

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm2Ns with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm2Ns and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Nonlinear surface impedance of YBCO thin films: Measurements, modeling, and effects in devices

International Nuclear Information System (INIS)

Oates, D.E.; Koren, G.; Polturak, E.

1995-01-01

High-T c thin films continue to be of interest for passive device applications at microwave frequencies, but nonlinear effects may limit the performance. To understand these effects we have measured the nonlinear effects may limit the performance. To understand these effects we have measured the nonlinear surface impedance Z s in a number of YBa 2 Cu 3 O 7-x thin films as a function of frequency from 1 to 18 GHz, rf surface magnetic field H rf to 1500 Oe, and temperature from 4 K to T c . The results at low H rf are shown to agree quantitatively with a modified coupled-grain model and at high H rf with hysteresis-loss calculations using the Bean critical-state model applied to a thin strip. The loss mechanisms are extrinsic properties resulting from defects in the films. We also report preliminary measurements of the nonlinear impedance of Josephson junctions, and the results are related to the models of nonlinear Z s . The implications of nonlinear Z s for devices are discussed using the example of a five-pole bandpass filter

Study of memory effects in polymer dispersed liquid crystal films

International Nuclear Information System (INIS)

Han, Jinwoo

2006-01-01

In this work, we have studied the memory effects in polymer dispersed liquid crystal films. We found that optical responses, such as the memory effects, of the films depended strongly on the morphology. For example, memory effects were observed for films with polymer ball morphologies; however, only weak hysteresis effects were observed for films with droplet morphologies. In particular, a stronger memory effect was observed for films with more complicated polymer ball structures. Coincidentally, T TE , the temperature at which the memory state is thermally erased, was generally higher for the films exhibiting a stronger memory effect. In addition, studies of the temporal evolution of the films show that the memory effects become stronger after films have been kept on the shelf for a period of time. This change is likely to be associated with a modification of surface anchoring properties at the LC-polymer interface.

High field properties of superconducting BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Richter, Stefan [Institute for Metallic Materials, IFW Dresden (Germany); Technical University Dresden (Germany); Kurth, Fritz; Grinenko, Vadim; Nielsch, Kornelius; Huehne, Ruben [Institute for Metallic Materials, IFW Dresden (Germany); Iida, Kazumasa [Nagoya University (Japan); Pervakov, Kirill [Russian Academy of Sciences (Russian Federation); Tarantini, Chiara; Jaroszynski, Jan [National High Magnetic Field Laboratory (United States); Pukenas, Aurimas; Skrotzki, Werner [Technical University Dresden (Germany)

2016-07-01

Fe based superconductors combine the advantages of cuprates (high upper critical field) with the small Hc{sub 2} anisotropy of classic low temperature superconductors, which makes them suitable candidates for high field applications. The study of Fe-based superconducting thin films is one crucial step to explore this potential in more detail. We present results for epitaxial BaFe{sub 2-x}Ni{sub x}As{sub 2} thin films, which have been successfully grown for the first time using pulsed laser deposition. Superconducting transition temperatures of up to 19 K have been realized in slightly overdoped films, which is in good agreement with results obtained for single crystals. The behavior of the upper critical field and critical current density has been measured in high magnetic fields up to 35 T. The results will be correlated to the observed microstructure and compared to high field data for single crystals with similar composition.

Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

Science.gov (United States)

Aleshin, A. N.; Shcherbakov, I. P.; Trapeznikova, I. N.; Petrov, V. N.

2017-12-01

Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH3NH3PbBr3, were obtained and their electrical properties were studied. FETs made of CH3NH3PbBr3 films possess current- voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH3NH3PbBr3 have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH3NH3PbBr3 at 300 K in saturation and weak field regimes were 5 and 2 cm2/V s, respectively, whereas electron mobility is 3 cm2/V s, which exceeds the mobility value 1 cm2/V s obtained earlier for FETs based on CH3NH3PbI3.

Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors.

Science.gov (United States)

Zhou, Shujun; Tang, Qingxin; Tian, Hongkun; Zhao, Xiaoli; Tong, Yanhong; Barlow, Stephen; Marder, Seth R; Liu, Yichun

2018-05-09

The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

Magnetoelectric effect in nanogranular FeCo-MgF films at GHz frequencies

Science.gov (United States)

Ikeda, Kenji; Kobayashi, Nobukiyo; Arai, Ken-Ichi; Yabukami, Shin

2018-01-01

The magnetoelectric effect is a key issue for material science and is particularly significant in the high frequency band, where it is indispensable in industrial applications. Here, we present for the first time, a study of the high frequency tunneling magneto-dielectric (TMD) effect in nanogranular FeCo-MgF films, consisting of nanometer-sized magnetic FeCo granules dispersed in an MgF insulator matrix. Dielectric relaxation and the TMD effect are confirmed at frequencies over 10 MHz. The frequency dependence of dielectric relaxation is described by the Debye-Fröhlich model, taking relaxation time dispersion into account, which reflects variations in the nature of the microstructure, such as granule size, and the inter-spacing between the granules that affect the dielectric response. The TMD effect reaches a maximum at a frequency that is equivalent to the inverse of the relaxation time. The frequency where the peak TMD effect is observed varies between 12 MHz and 220 MHz, depending on the concentration of magnetic metal in the nanogranular films. The inter-spacing of the films decreases with increasing magnetic metal concentration, in accordance with the relaxation time. These results indicate that dielectric relaxation is controlled by changing the nanostructure, using the deposition conditions. A prospective application of these nanogranular films is in tunable impedance devices for next-generation mobile communication systems, at frequencies over 1 GHz, where capacitance is controlled using the applied magnetic field.

Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Yao, Zh.Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y.X.

2006-01-01

Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N 2 mixture. The effects of N 2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N 2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N 2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24 deg. to 49.6 deg. To some extent, the silicon nitride films deposited are hydrophilic in nature

Effects of electric fields on the photonic crystal formation from block copolymers

Science.gov (United States)

Lee, Taekun; Ju, Jin-wook; Ryoo, Won

2012-03-01

Effects of electric fields on the self-assembly of block copolymers have been investigated for thin films of polystyrene-bpoly( 2-vinyl pyridine); PS-b-P2VP, 52 kg/mol-b-57 kg/mol and 133 kg/mol-b-132 kg/mol. Block copolymers of polystyrene and poly(2-vinyl pyridine) have been demonstrated to form photonic crystals of 1D lamellar structure with optical band gaps that correspond to UV-to-visible light. The formation of lamellar structure toward minimum freeenergy state needs increasing polymer chain mobility, and the self-assembly process is accelerated usually by annealing, that is exposing the thin film to solvent vapor such as chloroform and dichloromethane. In this study, thin films of block copolymers were spin-coated on substrates and placed between electrode arrays of various patterns including pin-points, crossing and parallel lines. As direct or alternating currents were applied to electrode arrays during annealing process, the final structure of thin films was altered from the typical 1D lamellae in the absence of electric fields. The formation of lamellar structure was spatially controlled depending on the shape of electrode arrays, and the photonic band gap also could be modulated by electric field strength. The spatial formation of lamellar structure was examined with simulated distribution of electrical potentials by finite difference method (FDM). P2VP layers in self-assembled film were quaternized with methyl iodide vapor, and the remaining lamellar structure was investigated by field emission scanning electron microscope (FESEM). The result of this work is expected to provide ways of fabricating functional structures for display devices utilizing photonic crystal array.

Effects of film thickness and preferred orientation on the dielectric properties of (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 films

International Nuclear Information System (INIS)

Cao, L Z; Fu, W Y; Wang, S F; Wang, Q; Sun, Z H; Yang, H; Cheng, B L; Wang, H; Zhou, Y L

2007-01-01

(Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 (BZN) films with different thicknesses and preferred orientations have been fabricated on Nb doped SrTiO 3 substrates by pulsed laser deposition. As the thickness increases, the permittivity increases, and the dielectric loss decreases, while the tunability only has a little variation. The asymmetric behaviour of the electric field dependent permittivity reduces gradually with the increasing thickness, which should be attributed to the decrease in the effect of the interfacial layer between the dielectric film and substrate (electrode). Furthermore, compared with the (1 0 0) oriented BZN film, BZN film with (1 1 1) preferred orientation exhibits high dielectric loss

A rapidly equilibrating, thin film, passive water sampler for organic contaminants; characterization and field testing.

Science.gov (United States)

St George, Tiffany; Vlahos, Penny; Harner, Tom; Helm, Paul; Wilford, Bryony

2011-02-01

Improving methods for assessing the spatial and temporal resolution of organic compound concentrations in marine environments is important to the sustainable management of our coastal systems. Here we evaluate the use of ethylene vinyl acetate (EVA) as a candidate polymer for thin-film passive sampling in waters of marine environments. Log K(EVA-W) partition coefficients correlate well (r(2) = 0.87) with Log K(OW) values for selected pesticides and polychlorinated biphenyls (PCBs) where Log K(EVA-W) = 1.04 Log K(OW) + 0.22. EVA is a suitable polymer for passive sampling due to both its high affinity for organic compounds and its ease of coating at sub-micron film thicknesses on various substrates. Twelve-day field deployments were effective in detecting target compounds with good precision making EVA a potential multi-media fugacity meter. Published by Elsevier Ltd.

Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

International Nuclear Information System (INIS)

Park, Y.; Hirose, Y.; Fukumura, T.; Hasegawa, T.; Nakao, S.; Xu, J.

2014-01-01

We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w Bi ) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ F  = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L ϕ ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w Bi and t smaller than λ F showed low dimensional electronic behavior at low temperatures where L ϕ (T) exceed w Bi or t

Effects of Various Parameters on Structural and Optical Properties of CBD-Grown ZnS Thin Films: A Review

Science.gov (United States)

Sinha, Tarkeshwar; Lilhare, Devjyoti; Khare, Ayush

2018-02-01

Zinc sulfide (ZnS) thin films deposited by chemical bath deposition (CBD) technique have proved their capability in a wide area of applications including electroluminescent and display devices, solar cells, sensors, and field emitters. These semiconducting thin films have attracted a much attention from the scientific community for industrial and research purposes. In this article, we provide a comprehensive review on the effect of various parameters on various properties of CBD-grown ZnS films. In the first part, we discuss the historical background of ZnS, its basic properties, and the advantages of the CBD technique. Detailed discussions on the film growth, structural and optical properties of ZnS thin films affected by various parameters, such as bath temperature and concentration, deposition time, stirring speed, complexing agents, pH value, humidity in the environment, and annealing conditions, are also presented. In later sections, brief information about the recent studies and findings is also added to explore the scope of research work in this field.

Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyuha [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Kim, A-Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

2014-09-15

Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO{sub 4} salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode.

A comparison of the accuracy of film-screen mammography, full-field digital mammography, and digital breast tomosynthesis

International Nuclear Information System (INIS)

Michell, M.J.; Iqbal, A.; Wasan, R.K.; Evans, D.R.; Peacock, C.; Lawinski, C.P.; Douiri, A.; Wilson, R.; Whelehan, P.

2012-01-01

Aim: To measure the change in diagnostic accuracy of conventional film-screen mammography and full-field digital mammography (FFDM) with the addition of digital breast tomosynthesis (DBT) in women recalled for assessment following routine screening. Materials and methods: Ethics approval for the study was granted. Women recalled for assessment following routine screening with screen-film mammography were invited to participate. Participants underwent bilateral, two-view FFDM and two-view DBT. Readers scored each lesion separately for probability of malignancy on screen-film mammography, FFDM, and then DBT. The scores were compared with the presence or absence of malignancy based on the final histopathology outcome. Results: Seven hundred and thirty-eight women participated (93.2% recruitment rate). Following assessment 204 (26.8%) were diagnosed as malignant (147 invasive and 57 in-situ tumours), 286 (37.68%) as benign, and 269 (35.4%) as normal. The diagnostic accuracy was evaluated by using receiving operating characteristic (ROC) and measurement of area under the curve (AUC). The AUC values demonstrated a significant (p = 0.0001) improvement in the diagnostic accuracy with the addition of DBT combined with FFDM and film-screen mammography (AUC = 0.9671) when compared to FFDM plus film-screen mammography (AUC = 0.8949) and film-screen mammography alone (AUC = 0.7882). The effect was significantly greater for soft-tissue lesions [AUC was 0.9905 with the addition of DBT and AUC was 0.9201 for FFDM with film-screen mammography combined (p = 0.0001)] compared to microcalcification [with the addition of DBT (AUC = 0.7920) and for FFDM with film-screen mammography combined (AUC = 0.7843; p = 0.3182)]. Conclusion: The addition of DBT increases the accuracy of mammography compared to FFDM and film-screen mammography combined and film-screen mammography alone in the assessment of screen-detected soft-tissue mammographic abnormalities.

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

International Nuclear Information System (INIS)

Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

2015-01-01

HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

Science.gov (United States)

Kirley, M. P.; Novakovic, B.; Sule, N.; Weber, M. J.; Knezevic, I.; Booske, J. H.

2012-03-01

We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB6), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB6 layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB6 are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB6/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB6) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 1018 cm-3) free carrier density in the sputtered polycrystalline LaB6.

Numerical simulations of nanostructured gold films

DEFF Research Database (Denmark)

Repän, Taavi; Frydendahl, Christian; Novikov, Sergey M.

2017-01-01

We present an approach to analyse near-field effects on nanostructured gold films by finite element simulations. The studied samples are formed by fabricating gold films near the percolation threshold and then applying laser damage. Resulting samples have complicated structures, which...

Effects of the APC materials on c-axis correlated pinning effects in a-axis oriented Y123/2D APC multilayer films

International Nuclear Information System (INIS)

Takamura, M.; Mukaida, M.; Horii, S.; Ichinose, A.; Kita, R.; Namba, M.; Awaji, S.; Watanabe, K.; Matsumoto, K.; Yoshida, Y.; Teranishi, R.; Yamada, K.; Mori, N.

2009-01-01

For a-axis oriented and c-axis in-plane aligned YBa 2 Cu 3 O 7-δ /artificial pinning center (Y123/APC) alternately-layered thin films, effects of the APC materials on the multilayer structures are discussed. Pr123, (Y 1-x Pr x )123 and Gd 2 CuO 4 (Gd214) were used as APCs. The multilayer structure was observed for Y123/Pr123 films and Y123/Gd214 films. However, some grains are also grown in the Y123/Gd214 film. For the Y123/Pr123 multilayer film, each Pr123 layer act as two-dimensional APCs (2D APCs) in the magnetic field angular dependences of the critical current density. The growth mechanism of the multilayer structure in the Y123/2D APC films is discussed by a transmission electron microscopy and an atomic force microscope. It is found that two conditions are needed to obtain the c-axis correlated pinning effects by 2D APC in the a-axis oriented and c-axis in-plane aligned Y123/APC multilayer films: the same structure as Y123; Y-free APC materials.

Matchline dosimetry in step and shoot IMRT fields: a film study

International Nuclear Information System (INIS)

Tangboonduangjit, P; Metcalfe, P; Butson, M; Quach, K Y; Rosenfeld, A

2004-01-01

The Varian millennium 120 multileaf collimator has curved leaf ends. Transmission through the leaf ends generates a small asymmetric penumbral dose effect. This design can lead to hot spots between neighbouring beam segments during step and shoot IMRT dose delivery. We have observed some matchlines with film for clinical beams optimized using the pinnacle radiotherapy treatment planning system; hence we sought to verify the optimum leaf offset required to minimize the matchline effect. An in-house program was created to control the MLC leaf banks in 2 cm steps with a 2 cm gap. The gap was varied by the following offset values from 0.0 to 0.1 cm. Two types of radiographic films (Kodak EDR and XV films) and a radiochromic film (Gafchromic MD-55-2) were used to measure the optical density maps. The films were positioned in a solid water phantom perpendicular to the beam axis and irradiated at d max using a 6 MV photon beam. An ion chamber (IC4) was used to measure point doses for normalization in a beam umbral minima position. The relative mean peak to valley dose ratios measured with no leaf offset were 1.31, 1.30 and 1.31 for the XV, EDR2 and Gafchromic films, respectively. For a 0.07 cm gap per leaf and a performance of end leaf repeatability of 0.01 cm, the central matchline was reduced to about 1.0 for all dosimeters, with two mini-peaks measured as 1.05, 1.05 and 1.08 each side of the matchline, for XV, EDR2 and Gafchromic, respectively. The average relative dose across the umbra for this offset was XO-mat V = 1.01, EDR = 1.01 and radiochromic film = 1.02, respectively. While we expected the beam penumbral tails from segment neighbours to cause overprediction of the dose in the central valley regions due to the energy response of radiographic films, by normalizing all dosimeters to an ion chamber reading in the minimum we could not observe any major shape distortion between the radiographic film and radiochromic film results. In conclusion, relative doses

An Ensemble Learning for Predicting Breakdown Field Strength of Polyimide Nanocomposite Films

Directory of Open Access Journals (Sweden)

Hai Guo

2015-01-01

Full Text Available Using the method of Stochastic Gradient Boosting, ten SMO-SVR are constructed into a strong prediction model (SGBS model that is efficient in predicting the breakdown field strength. Adopting the method of in situ polymerization, thirty-two samples of nanocomposite films with different percentage compositions, components, and thicknesses are prepared. Then, the breakdown field strength is tested by using voltage test equipment. From the test results, the correlation coefficient (CC, the mean absolute error (MAE, the root mean squared error (RMSE, the relative absolute error (RAE, and the root relative squared error (RRSE are 0.9664, 14.2598, 19.684, 22.26%, and 25.01% with SGBS model. The result indicates that the predicted values fit well with the measured ones. Comparisons between models such as linear regression, BP, GRNN, SVR, and SMO-SVR have also been made under the same conditions. They show that CC of the SGBS model is higher than those of other models. Nevertheless, the MAE, RMSE, RAE, and RRSE of the SGBS model are lower than those of other models. This demonstrates that the SGBS model is better than other models in predicting the breakdown field strength of polyimide nanocomposite films.

Organic field-effect transistors using single crystals

Directory of Open Access Journals (Sweden)

Tatsuo Hasegawa and Jun Takeya

2009-01-01

Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

Room temperature magnetocaloric effect in Ni-Mn-In-Cr ferromagnetic shape memory alloy thin films

Energy Technology Data Exchange (ETDEWEB)

Akkera, Harish Sharma [Functionalnanomaterials Research Lab, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand-247667 (India); Singh, Inderdeep [Mechanical and Industrial Engineering Department, Indian Institute of Technology Roorkee, Uttarakhand-24667 (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Functionalnanomaterials Research Lab, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand-247667 (India)

2017-02-15

The influence of Cr substitution for In on the martensitic phase transformation and magnetocaloric effect (MCE) has been investigated in Ni-Mn-Cr-In ferromagnetic shape memory alloy (FSMA) thin films fabricated by magnetron sputtering. Temperature dependent magnetization (M-T) measurements demonstrated that the martensitic transformation temperatures (T{sub M}) monotonously increase with the increase of Cr content due to change in valence electron concentration (e/a) and cell volume. From the study of isothermal magnetization curves (M-H), magnetocaloric effect around the martensitic transformation has been investigated in these FSMA thin films. The magnetic entropy change ∆S{sub M} of 7.0 mJ/cm{sup 3}-K was observed in Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5} film at 302 K in an applied field of 2 T. Further, the refrigerant capacity (RC) was also calculated for all the films in an applied field of 2 T. These findings indicate that the Cr doped Ni-Mn-In FSMA thin films are potential candidates for room temperature micro-length-scale magnetic refrigeration applications. - Highlights: • The Cr content leads to an increase in the martensitic transformation temperature. • The ∆S{sub M} =7 mJ/cm{sup 3}-K at 302 K was observed in the Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5}. • The RC =39.2 mJ/K at 2 T was obtained in Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5} film.

Oxygen and disorder effect in the magnetic properties of manganite films

Energy Technology Data Exchange (ETDEWEB)

Sirena, M. E-mail: sirenam@ib.cnea.gov.ar; Haberkorn, N.; Granada, M.; Steren, L.B.; Guimpel, J

2004-05-01

We have made a systematic study of the magnetic properties of low doped manganite films submitted to different oxygenation treatments. We have found that oxygenation dynamics depends critically of the strain field in the sample. The T{sub C} and the Mr increase as the oxygen content is increased. A decrease of the coercive field of the LSMO-STO films was observed, indicating that annealing treatments increase the oxygen content reducing oxygen vacancies.

Oxygen and disorder effect in the magnetic properties of manganite films

International Nuclear Information System (INIS)

Sirena, M.; Haberkorn, N.; Granada, M.; Steren, L.B.; Guimpel, J.

2004-01-01

We have made a systematic study of the magnetic properties of low doped manganite films submitted to different oxygenation treatments. We have found that oxygenation dynamics depends critically of the strain field in the sample. The T C and the Mr increase as the oxygen content is increased. A decrease of the coercive field of the LSMO-STO films was observed, indicating that annealing treatments increase the oxygen content reducing oxygen vacancies

Optical super-resolution effect induced by nonlinear characteristics of graphene oxide films

Science.gov (United States)

Zhao, Yong-chuang; Nie, Zhong-quan; Zhai, Ai-ping; Tian, Yan-ting; Liu, Chao; Shi, Chang-kun; Jia, Bao-hua

2018-01-01

In this work, we focus on the optical super-resolution effect induced by strong nonlinear saturation absorption (NSA) of graphene oxide (GO) membranes. The third-order optical nonlinearities are characterized by the canonical Z-scan technique under femtosecond laser (wavelength: 800 nm, pulse width: 100 fs) excitation. Through controlling the applied femtosecond laser energy, NSA of the GO films can be tuned continuously. The GO film is placed at the focal plane as a unique amplitude filter to improve the resolution of the focused field. A multi-layer system model is proposed to present the generation of a deep sub-wavelength spot associated with the nonlinearity of GO films. Moreover, the parameter conditions to achieve the best resolution (˜λ/6) are determined entirely. The demonstrated results here are useful for high density optical recoding and storage, nanolithography, and super-resolution optical imaging.

Effect of Etching on the Optical, Morphological Properties of Ag Thin Films for SERS Active Substrates

Directory of Open Access Journals (Sweden)

Desapogu Rajesh

2013-01-01

Full Text Available Structural, optical, and morphological properties of Ag thin films before and after etching were investigated by using X-ray diffraction, UV-Vis spectrophotometer, and field emission scanning electron microscopy (FESEM. The HNO3 roughened Ag thin films exhibit excellent enhancement features and better stability than pure Ag thin films. Further, the Ag nanostructures are covered with Rhodamine 6G (Rh6G and then tested with surface enhanced raman spectroscopy (SERS for active substrates. Etched Ag films were found to exhibit a strong SERS effect and excellent thermal stability. Hence, the present method is found to be useful in the development of plasmon-based analytical devices, especially SERS-based biosensors.

High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

Energy Technology Data Exchange (ETDEWEB)

Shi, Wei; Han, Shijiao; Huang, Wei; Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2015-01-26

High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm{sup 2}/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role in enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.

Electromechanical interactions in a carbon nanotube based thin film field emitting diode

International Nuclear Information System (INIS)

Sinha, N; Mahapatra, D Roy; Sun, Y; Yeow, J T W; Melnik, R V N; Jaffray, D A

2008-01-01

Carbon nanotubes (CNTs) have emerged as promising candidates for biomedical x-ray devices and other applications of field emission. CNTs grown/deposited in a thin film are used as cathodes for field emission. In spite of the good performance of such cathodes, the procedure to estimate the device current is not straightforward and the required insight towards design optimization is not well developed. In this paper, we report an analysis aided by a computational model and experiments by which the process of evolution and self-assembly (reorientation) of CNTs is characterized and the device current is estimated. The modeling approach involves two steps: (i) a phenomenological description of the degradation and fragmentation of CNTs and (ii) a mechanics based modeling of electromechanical interaction among CNTs during field emission. A computational scheme is developed by which the states of CNTs are updated in a time incremental manner. Finally, the device current is obtained by using the Fowler-Nordheim equation for field emission and by integrating the current density over computational cells. A detailed analysis of the results reveals the deflected shapes of the CNTs in an ensemble and the extent to which the initial state of geometry and orientation angles affect the device current. Experimental results confirm these effects

Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

International Nuclear Information System (INIS)

Breiland, W.G.; Lee, S.R.; Koleske, D.D.

2004-01-01

When optical measurements of wafer curvature are used to determine thin-film stress, the laser beams that probe the sample are usually assumed to reflect specularly from the curved surface of the film and substrate. Yet, real films are not uniformly thick, and unintended thickness gradients produce optical diffraction effects that steer the laser away from the ideal specular condition. As a result, the deflection of the laser in wafer-curvature measurements is actually sensitive to both the film stress and the film-thickness gradient. We present a Fresnel-Kirchhoff optical diffraction model of wafer-curvature measurements that provides a unified description of these combined effects. The model accurately simulates real-time wafer-curvature measurements of nonuniform GaN films grown on sapphire substrates by vapor-phase epitaxy. During thin-film growth, thickness gradients cause the reflected beam to oscillate asymmetrically about the ideal position defined by the stress-induced wafer curvature. This oscillating deflection has the same periodicity as the reflectance of the growing film, and the deflection amplitude is a function of the film-thickness gradient, the mean film thickness, the wavelength distribution of the light source, the illuminated spot size, and the refractive indices of the film and substrate. For typical GaN films grown on sapphire, misinterpretation of these gradient-induced oscillations can cause stress-measurement errors that approach 10% of the stress-thickness product; much greater errors occur in highly nonuniform films. Only transparent films can exhibit substantial gradient-induced deflections; strongly absorbing films are immune

Probing organic field effect transistors in situ during operation using SFG.

Science.gov (United States)

Ye, Hongke; Abu-Akeel, Ashraf; Huang, Jia; Katz, Howard E; Gracias, David H

2006-05-24

In this communication, we report results obtained using surface-sensitive IR+Visible Sum Frequency Generation (SFG) nonlinear optical spectroscopy on interfaces of organic field effect transistors during operation. We observe remarkable correlations between trends in the surface vibrational spectra and electrical properties of the transistor, with changes in gate voltage (VG). These results suggest that field effects on electronic conduction in thin film organic semiconductor devices are correlated to interfacial nonlinear optical characteristics and point to the possibility of using SFG spectroscopy to monitor electronic properties of OFETs.

Experimental comparison of profiles of acquired small fields with ionization chambers, diodes, radiochromic s and TLD films

International Nuclear Information System (INIS)

Venencia, D.; Garrigo, E.; Filipuzzi, M.; Germanier, A.

2014-08-01

The use of radiation small fields, introduced by new techniques, can bring a considerable uncertainty in the precision of the acquired profiles, due to the conditions of lateral electronic non-equilibrium and the perturbations introduced by the detectors (volume effect and alteration of the charged particles flowing) [Das et al., 2007]. The development of new miniature detectors looks to diminish the uncertainty created by the material and the size of the sensitive volume of the dosimeter. For this reason, comparative measurements for three sizes of square field were carried out (20 mm, 10 mm and 5 mm, of side) using a detectors series: 3 ionization chambers (PTW-31003, IBA-CC04, PTW-31016), 2 diodes (PTW-60012, IBA-Sfd), thermoluminescent detectors micro-cubes of 1 mm of edge (TLD-700) and radiochromic s films EBT-3. These last two were used as reference detectors, due to their spatial high resolution and similar performance with Monte Carlo simulations [Francescon et al., 1998]. So much the thermoluminescent detectors as the radiochromic films resolved the profiles in a similar way. Both diodes responded correctly, but the rest of the detectors overestimated the gloom of the fields, which allows conclude that the used TLD (and both diodes) can resolve field sizes correctly, usually utilized in radio-surgery, without producing significant alterations in the acquired data. (author)

ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

International Nuclear Information System (INIS)

Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

2004-01-01

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

International Nuclear Information System (INIS)

Park, Yong Seob; Kim, Han-Ki

2011-01-01

Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I D -V D ), drain current-gate voltage (I D -V G ), threshold voltage (V T ), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10 -3 Ω.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm 2 /V s and the on/off ratio of ∼ 10 5 . Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

Energy Technology Data Exchange (ETDEWEB)

Park, Y., E-mail: youngok@chem.s.u-tokyo.ac.jp [Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan); Hirose, Y.; Fukumura, T.; Hasegawa, T. [Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); CREST, JST, Bunkyo, Tokyo 113-0033 (Japan); Nakao, S. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); CREST, JST, Bunkyo, Tokyo 113-0033 (Japan); Xu, J. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

2014-01-13

We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w{sub Bi}) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ{sub F} = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L{sub ϕ}) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w{sub Bi} and t smaller than λ{sub F} showed low dimensional electronic behavior at low temperatures where L{sub ϕ}(T) exceed w{sub Bi} or t.

Composition, structure and properties of SiN x films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Yao, Zh.Q.; Yang, P.; Huang, N.; Sun, H.; Wan, G.J.; Leng, Y.X.; Chen, J.Y.

2005-01-01

Silicon nitride (SiN x ) thin films are of special interest in both scientific research and industrial applications due to their remarkable properties such as high thermal stability, chemical inertness, high hardness and good dielectric properties. In this work, SiN x films were fabricated by pulsed reactive closed-field unbalanced magnetron sputtering of high purity single crystal silicon targets in an Ar-N 2 mixture. The effect of N 2 partial pressure on the film composition, chemical bonding configurations, surface morphology, surface free energy, optical and mechanical properties were investigated. We showed that with increased N 2 partial pressure, the N to Si ratio (N/Si) in the film increased and N atoms are preferentially incorporated in the NSi 3 stoichiometric configuration. It leads the Si-N network a tendency to chemical order. Films deposited at a high N 2 fraction were consistently N-rich. The film surface transformed from a loose granular structure with microporosity to a homogeneous, continuous, smooth and dense structure. A progressive densification of the film microstructure occurs as the N 2 fraction is increased. The reduced surface roughness and the increased N incorporation in the film give rise to the increased contact angle with double-distilled water from 24 o to 49.6 o . To some extent, the SiN x films deposited by pulsed magnetron sputtering are hydrophilic in nature. The as-deposited SiN x films exhibit good optical transparency in the visible region and the optical band gap E opt can be varied from 1.68 eV for a-Si to 3.62 eV for SiN x films, depending on the synthesis parameters. With the increase of the N/Si atomic ratio, wear resistance of the SiN x films was improved, a consequence of increased hardness and elastic modulus. The SiN x films have lower friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction, where the SiN x films experienced only fatigue wear

Fermion analogy for layered superconducting films in parallel magnetic field

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Rodriguez, J.P.

1997-01-01

The equivalence between the Lawrence-Doniach model for films of extreme type-II layered superconductors and a generalization of the back-scattering model for spin-(1/2) electrons in one dimension is demonstrated. This fermion analogy is then exploited to obtain an anomalous H parallel -1 tail for the parallel equilibrium magnetization of the minimal double-layer case in the limit of high parallel magnetic fields H parallel for temperatures in the critical regime. (orig.)

Field-effect measurements of mobility and carrier concentration of Cu2S colloidal quantum dot thin films after ligand exchange

International Nuclear Information System (INIS)

Brewer, Adam S.; Arnold, Michael S.

2014-01-01

Colloidal quantum dots (CQDs) of copper sulfide (Cu 2 S), an earth-abundant semiconductor, have a number of intriguing applications that require knowledge of their electrical properties. Depending on stoichiometry, mobility, and surface treatment, applications include photoabsorbers for solar cells, tunable plasmonics, and counter-electrodes for polysulfate electrolytes. However, there have not been any direct measurements of electrical properties in Cu 2 S CQD thin films. Here, we exchange as synthesized dodecanethiol ligands with short ethanedithiol or ethylenediamine ligands to form thin films of coupled Cu 2 S CQDs. The mobility and carrier concentration were found to vary by ligand treatment from 10 −5 cm 2 /Vs and 10 19 holes/cm 3 for ethanedithiol ligands to 10 −3 cm 2 /Vs and 10 20 holes/cm 3 for ethylenediamine. These results are consistent with the carrier concentrations inferred from sub-bandgap surface-plasmon-resonances measured by infrared spectroscopy. These results will be useful when designing Cu 2 S materials for future applications. - Highlights: • Colloidal Cu2S quantum dots were synthesized and characterized. • Ligand exchange was performed to alter the Cu2S nanocrystal properties. • Ligand exchange was studied using photoluminescence and infrared spectroscopy. • Field effect mobility and carrier concentration were directly measured. • Carrier concentration was compared to estimates from surface plasmon resonances

Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

International Nuclear Information System (INIS)

Nakayama, Hiroyasu; Ohtani, Takashi; Fujikawa, Yasunori; Ando, Kazuya; Saitoh, Eiji; Ye, Jianting; Iwasa, Yoshihiro

2012-01-01

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MV cm -1 of electric field by applying only 1.7 V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems. (author)

Three dimensional simulation of giant magneto-impedance effect in thin film structures

KAUST Repository

Li, Bodong; Kosel, Jü rgen

2011-01-01

In this paper, a three dimensional model for the giant magneto-impedance (GMI) effect in thin film structures is developed using the finite element method(FEM) with a GMI permeability model embedded. One-layer, three-layer, and five-layer thin film structures are simulated. The GMI effect and the sensitivity are calculated as a function of the external magnetic field, driving frequency, and the thickness of the magnetic layers. The results show that the five-layer structure has the best performance, which is in accordance with experimental results. The GMI ratio and the sensitivity first improve with the increasing thickness of the magnetic layer but reach saturation at a certain value of the thickness. In a five-layer structure,saturation of the GMI effect becomes effective at about 3 μm thickness of the magnetic layers, where a GMI ratio of 1125% was obtained, with a corresponding sensitivity of 0.37%/A/m (29.6%/Oe).

Three dimensional simulation of giant magneto-impedance effect in thin film structures

KAUST Repository

Li, Bodong

2011-04-04

In this paper, a three dimensional model for the giant magneto-impedance (GMI) effect in thin film structures is developed using the finite element method(FEM) with a GMI permeability model embedded. One-layer, three-layer, and five-layer thin film structures are simulated. The GMI effect and the sensitivity are calculated as a function of the external magnetic field, driving frequency, and the thickness of the magnetic layers. The results show that the five-layer structure has the best performance, which is in accordance with experimental results. The GMI ratio and the sensitivity first improve with the increasing thickness of the magnetic layer but reach saturation at a certain value of the thickness. In a five-layer structure,saturation of the GMI effect becomes effective at about 3 μm thickness of the magnetic layers, where a GMI ratio of 1125% was obtained, with a corresponding sensitivity of 0.37%/A/m (29.6%/Oe).

Nanomagnetic behavior of fullerene thin films in Earth magnetic field in dark and under polarization light influences.

Science.gov (United States)

Koruga, Djuro; Nikolić, Aleksandra; Mihajlović, Spomenko; Matija, Lidija

2005-10-01

In this paper magnetic fields intensity of C60 thin films of 60 nm and 100 nm thickness under the influence of polarization lights are presented. Two proton magnetometers were used for measurements. Significant change of magnetic field intensity in range from 2.5 nT to 12.3 nT is identified as a difference of dark and polarization lights of 60 nm and 100 nm thin films thickness, respectively. Specific power density of polarization light was 40 mW/cm2. Based on 200 measurement data average value of difference between magnetic intensity of C60 thin films, with 60 nm and 100 nm thickness, after influence of polarization light, were 3.9 nT and 9.9 nT respectively.

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

Science.gov (United States)

Ahlberg, Patrik; Hinnemo, Malkolm; Zhang, Shi-Li; Olsson, Jörgen

2018-03-01

By pretreating the substrate of a graphene field-effect transistor (G-FET), a stable unipolar transfer characteristic, instead of the typical V-shape ambipolar behavior, has been demonstrated. This behavior is achieved through functionalization of the SiO2/Si substrate that changes the SiO2 surface from hydrophilic to hydrophobic, in combination with postdeposition of an Al2O3 film by atomic layer deposition (ALD). Consequently, the back-gated G-FET is found to have increased apparent hole mobility and suppressed apparent electron mobility. Furthermore, with addition of a top-gate electrode, the G-FET is in a double-gate configuration with independent top- or back-gate control. The observed difference in mobility is shown to also be dependent on the top-gate bias, with more pronounced effect at higher electric field. Thus, the combination of top and bottom gates allows control of the G-FET's electron and hole mobilities, i.e., of the transfer behavior. Based on these observations, it is proposed that polar ligands are introduced during the ALD step and, depending on their polarization, result in an apparent increase of the effective hole mobility and an apparent suppressed effective electron mobility.

Effect of hole imperfection on adiabatic film cooling effectiveness

International Nuclear Information System (INIS)

Jovanovic, M.B.; Lange, H.C.; Steenhoven, A.A. van

2008-01-01

The influence of a discrete imperfection on film cooling is studied by means of thermochromic liquid crystals measurements of the adiabatic film cooling effectiveness. As a benchmark, the effect of a jet ejected through a perfect hole is used. The film cooling effectiveness achieved with an imperfect hole is compared to the benchmark. A half torus plays the role of the discrete imperfection. The influence of the presence of the imperfection, its position and the turbulence intensity of the free stream are analyzed. The measurement data are depicted as two-dimensional plots but also as integral values. It is found that the imperfection, placed one diameter from the hole leading edge, deteriorates the effectiveness at moderate velocity ratios. Under the same conditions, the same imperfection fixed at the hole exit improves the effectiveness. At the velocity ratio of 1.50, the exit imperfection improves the integral effectiveness relatively for more than two times. The turbulence intensity and imperfections placed deeper in the hole do not have a significant influence

Plastic-Film Mulching for Enhanced Water-Use Efficiency and Economic Returns from Maize Fields in Semiarid China.

Science.gov (United States)

Zhang, Peng; Wei, Ting; Cai, Tie; Ali, Shahzad; Han, Qingfang; Ren, Xiaolong; Jia, Zhikuan

2017-01-01

Film mulch has gradually been popularized to increase water availability to crops for improving and stabilizing agricultural production in the semiarid areas of Northwest China. To find more sustainable and economic film mulch methods for alleviating drought stress in semiarid region, it is necessary to test optimum planting methods in same cultivation conditions. A field experiment was conducted during 2013 and 2014 to evaluate the effects of different plastic film mulch methods on soil water, soil temperature, water use efficiency (WUE), yield and revenue. The treatments included: (i) the control, conventional flat planting without plastic film mulch (CK); (ii) flat planting with maize rows (60 cm spacing) on plastic film mulch (70 cm wide); (iii) furrow planting of maize (60 cm spacing), separated by consecutive plastic film-mulched ridges (each 50 cm wide and 15 cm tall); (iv) furrow planting of maize (60 cm spacing), separated by alternating large and small plastic film-mulched ridges (large ridges: 70 cm wide and 15 cm tall, small ridges 50 cm wide and 10 cm tall); and (v) furrow-flat planting of maize (60 cm spacing) with a large plastic film-mulched ridge (60 cm wide and 15 cm tall) alternating with a flat without plastic film-mulched space (60 cm wide). Topsoil temperature (5-25 cm) was significantly ( p plastic film mulch than the control (CK), and resulted in greater soil water storage (0-200 cm) up to 40 days after planting. Maize grain yield and WUE were significantly ( p < 0.05) higher with the furrow planting methods (consecutive film-mulched ridges and alternating film-mulched ridges) than the check in both years. Maize yield was, on average, 29% ( p < 0.05) greater and 28% ( p < 0.05) greater with these furrow planting methods, while the average WUE increased by 22.8% ( p < 0.05) with consecutive film-mulched ridges and 21.1% ( p < 0.05) with alternating film-mulched ridges. The 2-year average net income increased by 1559, 528, and 350 Chinese Yuan

Strain and Ferroelectric-Field Effects Co-mediated Magnetism in (011)-CoFe2O4/Pb(Mg1/3Nb2/3)0.7Ti0.3O3Multiferroic Heterostructures

KAUST Repository

Wang, Ping

2016-08-19

Electric-field mediated magnetism was investigated in CoFe2O4 (CFO, deposited by reactive cosputtering under different Oxygen flow rates) films fabricated on (011)-Pb(Mg1/3Nb2/3)(0.7)Ti0.3O3 (PMN-PT) substrates. Ascribed to the volatile strain effect of PMN-PT, the magnetization of the CFO films decreases along the [01-1] direction whereas it increases along the [100] direction under the electric field, which is attributed to the octahedron distortion in the spinel ferrite. Moreover, a nonvolatile mediation was obtained in the CFO film with low oxygen flow rate (4 sccm), deriving from the ferroelectric-field effect, in which the magnetization is different after removing the positive and negative fields. The cooperation of the two effects produces four different magnetization states in the CFO film with low oxygen flow rate (4 sccm), compared to the only two different states in the CFO film with high oxygen flow rate (10 sccm). It is suggested that the ferroelectric-field effect is related to the oxygen vacancies in CFO films.

Measurement of effective piezoelectric coefficients of PZT thin films for energy harvesting application with interdigitated electrodes.

Science.gov (United States)

Chidambaram, Nachiappan; Mazzalai, Andrea; Muralt, Paul

2012-08-01

Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, and second, the application of an electric field leads to a compressive stress component in addition to the overall stress state, unlike a PPE structure, which results in tensile stress component. Because ceramics tend to crack at relatively moderate tensile stresses, this means that IDEs have a lower risk of cracking than PPEs. For these reasons, IDE systems are ideal for energy harvesting of vibration energy, and for actuators. Systematic investigations of PZT films with IDE systems have not yet been undertaken. In this work, we present results on the evaluation of the in-plane piezoelectric coefficients with IDE systems. Additionally, we also propose a simple and measurable figure of merit (FOM) to analyze and evaluate the relevant piezoelectric parameter for harvesting efficiency without the need to fabricate the energy harvesting device. Idealized effective coefficients e(IDE) and h(IDE) are derived, showing its composite nature with about one-third contribution of the transverse effect, and about two-thirds contribution of the longitudinal effect in the case of a PZT film deposited on a (100)-oriented silicon wafer with the in-plane electric field along one of the Si directions. Randomly oriented 1-μm-thick PZT 53/47 film deposited by a sol-gel technique, was evaluated and yielded an effective coefficient e(IDE) of 15 C·m(-2). Our FOM is the product between effective e and h coefficient representing twice the electrical energy density stored in the piezoelectric film per unit strain deformation (both for IDE and PPE systems). Assuming homogeneous fields between the fingers, and neglecting the contribution from below the electrode fingers, the FOM for IDE structures with larger electrode gap is derived to be

Effects of Post- Heat Treatment of Nanocrystalline ZnO Thin Films deposited on Zn-Deposited FTO Substrates

Energy Technology Data Exchange (ETDEWEB)

Kim, Ikhyun; Kim, Younggyu; Nam, Giwoong; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

2015-10-15

The effects of heat-treatment temperature on the structural and optical properties of ZnO thin films were investigated with field-effect scanning electron microscopy (SEM), X-ray diffraction analysis, and photoluminescence (PL) measurements. The ZnO thin films were grown on Zn-deposited fluorine-doped tin oxide substrates by sol-gel spin coating. The SEM images of the samples showed that their surfaces had a mountain-chain-like structure. The film annealed at 400 ℃ had the highest degree of alignment along the c-axis, and its residual stress was close to zero. The PL spectra of the ZnO thin films consisted of sharp near-band-edge emissions (NBE) and broad deep-level emissions (DLE) in the visible range. The DLE peaks exhibited a green-to-red shift with an increase in the temperature. The highest INBE/IDLE ratio was observed in the film annealed at 400 ℃. Thus, the optimal temperature for growing high-quality ZnO thin films on Zn-deposited FTO substrates is 400 ℃.

Enhancement and Tunability of Near-Field Radiative Heat Transfer Mediated by Surface Plasmon Polaritons in Thin Plasmonic Films

Directory of Open Access Journals (Sweden)

Svetlana V. Boriskina

2015-06-01

Full Text Available The properties of thermal radiation exchange between hot and cold objects can be strongly modified if they interact in the near field where electromagnetic coupling occurs across gaps narrower than the dominant wavelength of thermal radiation. Using a rigorous fluctuational electrodynamics approach, we predict that ultra-thin films of plasmonic materials can be used to dramatically enhance near-field heat transfer. The total spectrally integrated film-to-film heat transfer is over an order of magnitude larger than between the same materials in bulk form and also exceeds the levels achievable with polar dielectrics such as SiC. We attribute this enhancement to the significant spectral broadening of radiative heat transfer due to coupling between surface plasmon polaritons (SPPs on both sides of each thin film. We show that the radiative heat flux spectrum can be further shaped by the choice of the substrate onto which the thin film is deposited. In particular, substrates supporting surface phonon polaritons (SPhP strongly modify the heat flux spectrum owing to the interactions between SPPs on thin films and SPhPs of the substrate. The use of thin film phase change materials on polar dielectric substrates allows for dynamic switching of the heat flux spectrum between SPP-mediated and SPhP-mediated peaks.

Calibrating page sized Gafchromic EBT3 films

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