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Sample records for film ferroelectric composition

  1. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  2. The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

    Science.gov (United States)

    Qiu, Ye; Wu, Huaping; Wang, Jie; Lou, Jia; Zhang, Zheng; Liu, Aiping; Chai, Guozhong

    2018-02-01

    Compositionally graded ferroelectric thin films are found to produce large strain gradients, which can be used to tune the physical properties of materials through the flexoelectric effect, i.e., the coupling of polarization and the strain gradient. The influences of the flexoelectric effect on the polarization distribution and the piezoelectric properties in compositionally graded Ba1-xSrxTiO3 ferroelectric thin films are investigated by using an extended thermodynamic theory. The calculation results show that the presence of the flexoelectric effect tends to enhance and stabilize polarization components. The polarization rotation induced by the flexoelectric field has been predicted, which is accompanied by more uniform and orderly polarization components. A remarkable enhancement of piezoelectricity is obtained when the flexoelectric field is considered, suggesting that compositionally graded Ba1-xSrxTiO3 ferroelectric thin films with a large strain gradient are promising candidates for piezoelectric devices.

  3. Chemical composition and deformation-induced stresses in ferroelectric films of barium-strontium titanate

    International Nuclear Information System (INIS)

    Karmanenko, S.F.; Dedyk, A.I.; Isakov, N.N.; Sakharov, V.I.; Semenov, A.A.; Serenkov, I.T.; Ter-Martirosyan, L.T.

    1999-01-01

    Influence of the ratio of cationic components and inner deformation-induced stresses on critical temperature (T c ) and dielectric characteristics of ferroelectric films Ba x Sr 1-x TiO 3 grown on α-Al 2 O 3 [1012] and LaAlO 3 substrates was studied. Diagnosis by means of ion backscattering permitted ascertaining the deficiency of barium in the films near the surface layer, as well as differences in their structural quality [ru

  4. Supercapacitors: Ferroelectric Polymer-Ceramic Nanoparticle Composite Films for Use in the Capacitive Storage of Electrical Energy

    Science.gov (United States)

    Parsons, Dana; Pierce, Andrew; Porter, Tim; Dillingham, Randy; Cornelison, David

    2010-03-01

    Most new alternative energy solutions including wind and solar power, will require short term energy storage for widespread implementation. One means of storage would be the use of capacitors owing to their rapid delivery of power and longevity compared to chemical batteries. Capacitor materials exhibiting high dielectric permittivity and breakdown strength, as well as light weight and environmental safety are most desirable. Recently, new classes of capacitor dielectric materials, consisting of ferroelectric polymer matrices containing ceramic nanoparticles have attracted renewed interest due to their high potential energy storage, charge and discharge properties and lightweight. In this study, polyvinylidene flouride (PVDF) thin films containing nanoparticles of the ceramic titanium dioxide created using a physical vapor deposition process, are analyzed for use as dielectrics for a supercapacitor. Measured results of the film parameters including dielectric properties and breakdown voltages will be presented. These parameters will be analyzed with respect to film characteristics such as, dispersion of the ceramic particles, thickness of the films and composition ratios.

  5. Effect of (Cd:ZnS Particle Concentration and Photoexcitation on the Electrical and Ferroelectric Properties of (Cd:ZnS/P(VDF-TrFE Composite Films

    Directory of Open Access Journals (Sweden)

    Sebastian Engel

    2017-11-01

    Full Text Available The influence of semiconductor particle concentration and photoexcitation on the electrical and ferroelectric properties of ferroelectric-semiconductor-composites was investigated. For this purpose, 32 µm thin films of poly(vinylidene fluoride-co-trifluoroethylene with (Cd:ZnS particle concentrations of between 0 and 20 vol % were fabricated and characterized by scanning electron microscopy, Fourier transformed infrared spectroscopy, X-ray diffraction, and optical spectroscopy. It was shown that the particle concentration has only a negligible influence on the molecular structure of the polymer but strongly determines the optical properties of the composite. For (Cd:ZnS particle concentrations below 20 vol %, the I-V characteristics of the composites is only marginally affected by the particle concentration and the optical excitation of the composite material. On the contrary, a strong influence of both parameters on the ferro- and pyroelectric properties of the composite films was observed. For particle fractions that exhibit ferroelectric hysteresis, an increased remanent polarization and pyroelectric coefficient due to optical excitation was obtained. A theoretical approach that is based on a “three phase model” of the internal structure was developed to explain the observed results.

  6. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  7. High temperature phases in PZT ferroelectric films

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

    2003-01-01

    Roč. 293, - (2003), s. 111-118 ISSN 0015-0193 R&D Projects: GA ČR GP202/02/D078; GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * phase transition * film profile Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.406, year: 2003

  8. Domain switching of fatigued ferroelectric thin films

    Science.gov (United States)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-05-01

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  9. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  10. Geometric shape control of thin film ferroelectrics and resulting structures

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  11. Structural, dielectric and ferroelectric characterization of PZT thin films

    Directory of Open Access Journals (Sweden)

    Araújo E.B.

    1999-01-01

    Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

  12. Thick-film processing of Pb5Ge3O11-based ferroelectric glass-ceramics

    International Nuclear Information System (INIS)

    Cornejo, I.A.; Haun, M.J.

    1996-01-01

    Processing techniques were investigated to produce c-axis orientation, or texture, of ferroelectric Pb 5 Ge 3 O 11 -based glass-ceramic compositions during crystallization of amorphous thick-film printed samples from the Pb 5 Ge 3 O 11 -PbTiO 3 (PG-PT) and Pb 5 Ge 3 O 11 -Pb(Zr 1/2 Ti 1/2 )O 3 (PG-PZT) systems. In these systems the PG crystallized into a ferroelectric phase, producing a multiple ferroelectric phase composite at low temperatures, PG-PT or PG-PZT. In this way the non-ferroelectric component of traditional ferroelectric glass-ceramics was eliminated

  13. Elastic recoil detection analysis of ferroelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Stannard, W.B.; Johnston, P.N.; Walker, S.R.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Scott, J.F. [New South Wales Univ., Kensington, NSW (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1996-12-31

    There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra for individual elements or for small groups of elements In this work ERDA employing 77 MeV {sup 127}I ions has been used to analyse Strontium Bismuth Tantalate thin films at the heavy ion recoil facility at ANSTO, Lucas Heights. 9 refs., 5 figs.

  14. Elastic recoil detection analysis of ferroelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Stannard, W B; Johnston, P N; Walker, S R; Bubb, I F [Royal Melbourne Inst. of Tech., VIC (Australia); Scott, J F [New South Wales Univ., Kensington, NSW (Australia); Cohen, D D; Dytlewski, N [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1997-12-31

    There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra for individual elements or for small groups of elements In this work ERDA employing 77 MeV {sup 127}I ions has been used to analyse Strontium Bismuth Tantalate thin films at the heavy ion recoil facility at ANSTO, Lucas Heights. 9 refs., 5 figs.

  15. Functional Properties of Polydomain Ferroelectric Oxide Thin Films

    NARCIS (Netherlands)

    Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

    2017-01-01

    The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

  16. On bistable states retention in ferroelectric Langmuir-Blodgett films

    Science.gov (United States)

    Geivandov, A. R.; Palto, S. P.; Yudin, S. G.; Fridkin, V. M.; Blinov, L. M.; Ducharme, S.

    2003-08-01

    A new insight into the nature of ferroelectricity is emerging from the study of ultra-thin ferroelectric films prepared of poly(vinylidene fluoride with trifluoroethylene) copolymer using Langmuir-Blodgett (LB) technique. Unique properties of these films indicate the existence of two-dimensional ferroelectricity. The retention of two polarized states in ferroelectric polymer LB films is studied using nonlinear dielectric spectroscopy. The technique is based on phase sensitive measurements of nonlinear dielectric spectroscopy. The amplitude of the current response at the 2nd harmonic of the applied voltage is proportional to the magnitude of the remnant polarization, while its phase gives the sign. We have found that 10 - 20 mm thick LB films can show fast switching time and long retention of the two polarized states. Nevertheless, LB films show a pronounced asymmetry in switching to the opposite states. Possible mechanisms of such behavior are discussed.

  17. Characterization of the effective electrostriction coefficients in ferroelectric thin films

    Science.gov (United States)

    Kholkin, A. L.; Akdogan, E. K.; Safari, A.; Chauvy, P.-F.; Setter, N.

    2001-06-01

    Electromechanical properties of a number of ferroelectric films including PbZrxTi1-xO3(PZT), 0.9PbMg1/3Nb2/3O3-0.1PbTiO3(PMN-PT), and SrBi2Ta2O9(SBT) are investigated using laser interferometry combined with conventional dielectric measurements. Effective electrostriction coefficients of the films, Qeff, are determined using a linearized electrostriction equation that couples longitudinal piezoelectric coefficient, d33, with the polarization and dielectric constant. It is shown that, in PZT films, electrostriction coefficients slightly increase with applied electric field, reflecting the weak contribution of non-180° domains to piezoelectric properties. In contrast, in PMN-PT and SBT films electrostriction coefficients are field independent, indicating the intrinsic nature of the piezoelectric response. The experimental values of Qeff are significantly smaller than those of corresponding bulk materials due to substrate clamping and possible size effects. Electrostriction coefficients of PZT layers are shown to depend strongly on the composition and preferred orientation of the grains. In particular, Qeff of (100) textured rhombohedral films (x=0.7) is significantly greater than that of (111) layers. Thus large anisotropy of the electrostrictive coefficients is responsible for recently observed large piezoelectric coefficients of (100) textured PZT films. Effective electrostriction coefficients obtained by laser interferometry allow evaluation of the electromechanical properties of ferroelectric films based solely on the dielectric parameters and thus are very useful in the design and fabrication of microsensors and microactuators.

  18. Nanopolar reorientation in ferroelectric thin films

    International Nuclear Information System (INIS)

    Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S.

    2001-01-01

    The influence of varying oxygen pressure P(O 2 ) during the growth of Ba 0.4 Sr 0.6 TiO 3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O 2 ). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P c =85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O 2 )=P c

  19. Temperature dependence of electronic transport property in ferroelectric polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.L.; Wang, J.L., E-mail: jlwang@mail.sitp.ac.cn; Tian, B.B.; Liu, B.L.; Zou, Y.H.; Wang, X.D.; Sun, S.; Sun, J.L., E-mail: jlsun@mail.sitp.ac.cn; Meng, X.J.; Chu, J.H.

    2014-10-15

    Highlights: • The ferroelectric polymer was fabricated by Langmuir–Blodgett method. • The electrons as the dominant injected carrier were conformed in the ferroelectric polymer films. • The leakage current conduction mechanisms in ferroelectric polymer were investigated. - Abstract: The leakage current mechanism of ferroelectric copolymer of polyvinylidene fluoride with trifluoroethylene prepared by Langmuir–Blodgett was investigated in the temperature range from 100 K to 350 K. The electron as the dominant injected carrier was observed in the ferroelectric copolymer films. The transport mechanisms in copolymer strongly depend on the temperature and applied voltage. From 100 K to 200 K, Schottky emission dominates the conduction. With temperature increasing, the Frenkel–Poole emission instead of the Schottky emission to conduct the carrier transport. When the temperature gets to 260 K, the leakage current becomes independent of temperature, and the space charge limited current conduction was observed.

  20. Dynamic pyroelectric response of composite based on ferroelectric copolymer of poly(vinylidene fluoride-trifluoroethylene) and ferroelectric ceramics of barium lead zirconate titanate

    Energy Technology Data Exchange (ETDEWEB)

    Solnyshkin, A.V. [Tver State University, Department of Condensed Matter Physics, Tver (Russian Federation); National Research University ' ' MIET' ' , Department of Intellectual Technical Systems, Zelenograd, Moscow (Russian Federation); Morsakov, I.M.; Bogomolov, A.A. [Tver State University, Department of Condensed Matter Physics, Tver (Russian Federation); Belov, A.N.; Vorobiev, M.I.; Shevyakov, V.I.; Silibin, M.V. [National Research University ' ' MIET' ' , Department of Intellectual Technical Systems, Zelenograd, Moscow (Russian Federation); Shvartsman, V.V. [University of Duisburg-Essen, Institute for Materials Science, Essen (Germany)

    2015-10-15

    In this work, pyroelectric properties of composite films on the basis of poly(vinylidene fluoride-trifluoroethylene) copolymer with a various level of ferroelectric ceramics inclusions of barium lead zirconate titanate solid solution were investigated by the dynamic method. The composite films were prepared by the solvent cast method. The unusual spike-like dynamic response with a quasi-stationary component was observed. It is supposed that composite films may be effectively used for pyroelectric applications. (orig.)

  1. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Science.gov (United States)

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  2. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  3. Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

    Science.gov (United States)

    Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

    2018-02-01

    Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

  4. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  5. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

    International Nuclear Information System (INIS)

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  6. Nonlinear dielectric response in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    Lente, M. H.

    2004-08-01

    Full Text Available Electrical permittivity dependence on electric external bias field was investigated in PZT thin films. The results revealed the existence of two mechanisms contributing to the electrical permittivity. The first one was related to the domain reorientation, which was responsible for a strong no linear dielectric behavior, acting only during the poling process. The second mechanism was associated with the domain wall vibrations, which presented a reasonable linear electrical behavior with the applied bias field, contributing always to the permittivity independently of the poling state of the sample. The results also indicated that the gradual reduction of the permittivity with the increase of the bias field strength may be related to the gradual bending of the domain walls. It is believed that the domain wall bending induces a hardening and/or a thinning of the walls, thus reducing the electrical permittivity. A reinterpretation of the model proposed in the literature to explain the dielectric characteristics of ferroelectric materials at high electric field regime is proposed.

    Se ha estudiado la dependencia de la permitividad eléctrica con un campo bias externo en láminas delgadas de PZT. Los resultados revelaron la existencia de dos mecanismos que contribuyen a la permitividad eléctrica. El primero está relacionado con la reorientación de dominios, actúa sólo durante el proceso de polarización y es responsable de un comportamiento dieléctrico fuertemente no lineal. El segundo mecanismo se asocia a las vibraciones de las paredes de dominio, presentando un comportamiento eléctrico razonablemente lineal con el campo bias aplicado, contribuyendo siempre a la permitividad independientemente del estado de polarización de la muestra. Los resultados indicaron también que la reducción gradual de la permitividad con el aumento de la fuerza del campo bias podría estar relacionada con el “bending” gradual de las paredes de dominio

  7. Optical properties of self-polarized PZT ferroelectric films

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Jastrabík, Lubomír; Suchaneck, G.; Gerlach, G.

    2002-01-01

    Roč. 273, - (2002), s. 155-160 ISSN 0015-0193 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * phase transition * band gap Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.408, year: 2002

  8. Nondestructive investigatons of the depth profile of PZT ferroelectric films

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Glinchuk, M. D.; Jastrabík, Lubomír; Suchaneck, G.; Gerlach, G.

    2001-01-01

    Roč. 264, - (2001), s. 151-156 ISSN 0015-0193 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * depth profile * interface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.471, year: 2001

  9. Stress effects in ferroelectric perovskite thin-films

    Science.gov (United States)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  10. Microwave properties of film Ba x Sr1 - x TiO3 ferroelectric variconds with a magnesium-containing additive

    Science.gov (United States)

    Tumarkin, A. V.; Tepina, E. R.; Nenasheva, E. A.; Kartenko, N. F.; Kozyrev, A. B.

    2012-06-01

    The electrophysical properties of bulk ceramics based on Ba x Sr1 - x TiO3 solid solutions with a Mg-containing additive and planar variconds based on ferroelectric films obtained by the ion-plasma sputtering of targets with different elemental compositions are studied. Controllability n( U) = C(0)/ C( U) and the dielectric loss tangent (tanδ) of ferroelectric variconds are measured as functions of the elemental composition of the ferroelectric. The figure of merit of the variconds is estimated, and the film composition providing the best electrophysical parameters is determined.

  11. Enhanced electrical properties in bilayered ferroelectric thin films

    Science.gov (United States)

    Zhang, Hao; Long, WeiJie; Chen, YaQing; Guo, DongJie

    2013-03-01

    Sr2Bi4Ti5O18 (SBTi) single layered and Sr2Bi4Ti5O18/Pb(Zr0.53Ti0.47)O3 (SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD). The related structural characterizations and electrical properties have been comparatively investigated. X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces. Both films show well-saturated ferroelectric hysteresis loops, however, compared with the single layered SBTi films, the SBTi/PZT bilayered films have significantly increased remnant polarization ( P r) and decreased coercive field ( E c), with the applied field of 260 kV/cm. The measured P r and E c of SBTi and SBTi/PZT films were 7.9 μC/cm2, 88.1 kV/cm and 13.0 μC/cm2, 51.2 kV/cm, respectively. In addition, both films showed good fatigue-free characteristics, the switchable polarization decreased by 9% and 11% of the initial values after 2.2×109 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films, respectively. Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.

  12. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    Science.gov (United States)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  13. Analysis and Optimization of Thin Film Ferroelectric Phase Shifters

    Science.gov (United States)

    Romanofsky, Robert R.; VanKeuls, Fred W.; Warner, Joseph D.; Mueller, Carl H.; Alterovitz, Samuel A.; Miranda, Felix A.; Qureshi, A. Haq; Romanofsky, Robert R. (Technical Monitor)

    2000-01-01

    Microwave phase shifters have been fabricated from (YBa2Cu3O(7-delta) or Au)/SrTiO3 and Au/Ba(x)Sr(1-x)TiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counter-parts parts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is approximately equal 5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

  14. Ferroelectric properties of composites containing BaTiO3 nanoparticles of various sizes

    International Nuclear Information System (INIS)

    Adam, Jens; Lehnert, Tobias; Klein, Gabi; McMeeking, Robert M

    2014-01-01

    Size effects, including the occurrence of superparaelectric phases associated with small scale, are a significant research topic for ferroelectrics. Relevant phenomena have been explored in detail, e.g. for homogeneous, thin ferroelectric films, but the related effects associated with nanoparticles are usually only inferred from their structural properties. In contrast, this paper describes all the steps and concepts necessary for the direct characterization and quantitative assessment of the ferroelectric properties of as-synthesized and as-received nanoparticles. The method adopted uses electrical polarization measurements on polymer matrix composites containing ferroelectric nanoparticles. It is applied to ten different BaTiO 3 particle types covering a size range from 10 nm to 0.8 μm. The influence of variations of particle characteristics such as tetragonality and dielectric constant is considered based on measurements of these properties. For composites containing different particle types a clearly differing polarization behaviour is found. For decreasing particle size, increasing electric field is required to achieve a given level of polarization. The size dependence of a measure related to the coercive field revealed by this work is qualitatively in line with the state of the knowledge for ferroelectrics having small dimensions. For the first time, such results and size effects are described based on data from experiments on collections of actual nanoparticles. (paper)

  15. Ferroelectric properties of composites containing BaTiO 3 nanoparticles of various sizes

    Science.gov (United States)

    Adam, Jens; Lehnert, Tobias; Klein, Gabi; McMeeking, Robert M.

    2014-01-01

    Size effects, including the occurrence of superparaelectric phases associated with small scale, are a significant research topic for ferroelectrics. Relevant phenomena have been explored in detail, e.g. for homogeneous, thin ferroelectric films, but the related effects associated with nanoparticles are usually only inferred from their structural properties. In contrast, this paper describes all the steps and concepts necessary for the direct characterization and quantitative assessment of the ferroelectric properties of as-synthesized and as-received nanoparticles. The method adopted uses electrical polarization measurements on polymer matrix composites containing ferroelectric nanoparticles. It is applied to ten different BaTiO3 particle types covering a size range from 10 nm to 0.8 μm. The influence of variations of particle characteristics such as tetragonality and dielectric constant is considered based on measurements of these properties. For composites containing different particle types a clearly differing polarization behaviour is found. For decreasing particle size, increasing electric field is required to achieve a given level of polarization. The size dependence of a measure related to the coercive field revealed by this work is qualitatively in line with the state of the knowledge for ferroelectrics having small dimensions. For the first time, such results and size effects are described based on data from experiments on collections of actual nanoparticles.

  16. Application of Dielectric, Ferroelectric and Piezoelectric Thin Film Devices in Mobile Communication and Medical Systems

    NARCIS (Netherlands)

    Klee, M.; Beelen, D.; Keurl, W.; Kiewitt, R.; Kumar, B.; Mauczok, R.; Reimann, K.; Renders, Ch.; Roest, A.; Roozeboom, F.; Steeneken, P.G.; Tiggelman, M.P.J.; Vanhelmont, F.; Wunnicke, O.; Lok, P.; Neumann, K.; Fraser, J.; Schmitz, G.

    2007-01-01

    Dielectric, ferroelectric and piezoelectric thin films are getting more and more attention for next generation mobile communication and medical systems. Thin film technologies based on dielectric, ferroelectric and piezoelectric thin films enable System-in-Package (SiP) devices, resulting in optimal

  17. Depolarization corrections to the coercive field in thin-film ferroelectrics

    International Nuclear Information System (INIS)

    Dawber, M; Chandra, P; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 μm to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  18. Depolarization corrections to the coercive field in thin-film ferroelectrics

    CERN Document Server

    Dawber, M; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 mu m to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  19. Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

    2008-01-01

    Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

  20. Conformal growth method of ferroelectric materials for multifunctional composites

    Science.gov (United States)

    Bowland, Christopher Charles

    Multifunctional composites are the next generation of composites and aim to simultaneously meet multiple performance objectives to create system-level performance enhancements. Current fiber-reinforced composites have offered improved efficiency and performance through weight reduction and increased strength. However, these composites satisfy singular performance objectives. Therefore, the concept of multifunctional composites was developed as an approach to create components in a system that serve multiple functions. These composites aim to reduce the required components in a system by integrating unifunctional components together thus reducing the weight and complexity of the system as a whole. This work offers an approach to create multifunctional composites through the development of a structural, multifunctional fiber. This is achieved by synthesizing a ferroelectric material on the surface of carbon fiber. In this work, a two-step hydrothermal reaction is developed for synthesizing a conformal film of barium titanate (BaTiO3) on the surface of carbon fiber. A fundamental understanding of this hydrothermal process is performed on planar substrates leading to the development of processing parameters that result in epitaxial-type growth of highly-aligned BaTiO3 nanowires. This work establishes the hydrothermal reaction as a powerful synthesis technique for generating nanostructured BaTiO3 on carbon fiber creating a novel, multifunctional fiber. A reaction optimization process leads to the development of parameters that stabilize tetragonal phase BaTiO3 without the need for subsequent heat treatments. The application potential of these fibers is illustrated with both single fibers and woven fabrics. Single fiber cantilever beams are fabricated and subjected to vibrations to determine its voltage output with the ultimate goal of producing an air flow sensor. Carbon fiber reinforced composite integration is carried out by scaling up the hydrothermal reaction to

  1. Composition driven structural instability in perovskite ferroelectrics

    Directory of Open Access Journals (Sweden)

    Chao Xu

    2017-04-01

    Full Text Available Ferroelectric solid solutions usually exhibit enhanced functional properties at the morphotropic phase boundary separating two ferroelectric phases with different orientations of polarization. The underlying mechanism is generally associated with polarization rotational instability and the flattened free energy profile. In this work we show that the polarization extensional instability can also be induced at the morphotropic phase boundary beyond the reported polar-nonpolar phase boundary. The piezoelectricity enhanced by this mechanism exhibits excellent thermal stability, which helps to develop high performance piezoelectric materials with good temperature stability.

  2. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  3. Switching a ferroelectric film by asphyxiation

    Czech Academy of Sciences Publication Activity Database

    Hlinka, Jiří

    2009-01-01

    Roč. 2, - (2009), 8/1-8/2 ISSN 1943-2879 Institutional research plan: CEZ:AV0Z10100520 Keywords : ultrathin film * spontaneous electric polarization Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  5. Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

    2015-09-30

    Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

  6. Intelligent Processing of Ferroelectric Thin Films

    Science.gov (United States)

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  7. Dielectric properties of composite based on ferroelectric copolymer of poly(vinylidene fluoride-trifluoroethylene and ferroelectric ceramics of barium lead zirconate titanate

    Directory of Open Access Journals (Sweden)

    A. V. Solnyshkin

    2017-10-01

    Full Text Available A study of dielectric properties of composite films on the base of poly(vinylidene fluoride-trifluoroethylene copolymer P(VDF-TrFE and ferroelectric ceramics of barium lead zirconate titanate (BPZT solid solution is presented in this work. The composite films containing up to 50 vol.% of BPZT grains with size ∼1μm were prepared by the solvent cast method. Frequency dependences of real and imaginary components of the complex permittivity were determined. The concentration dependence of the dielectric constant was discussed.

  8. Characterisation of ferroelectric bulk materials and thin films

    CERN Document Server

    Cain, Markys G

    2014-01-01

    This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and - most importantly - relevant and applicable measurement and characterisation methods and models. In the past f

  9. Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

    Science.gov (United States)

    Lee, Jung-Kun; Nastasi, Michael

    2012-11-01

    The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

  10. Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review

    Directory of Open Access Journals (Sweden)

    Jianyi Liu

    2014-09-01

    Full Text Available This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc. that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads.

  11. Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds

    Science.gov (United States)

    Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki; Araujo, Carlos

    1995-09-01

    Ferroelectric thin films of bismuth layer structured compounds, SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions, were formed onto a sputtered platinum layer on a silicon substrate using spin-on technique and metal-organic decomposition (MOD) method. X-ray diffraction (XRD) analysis and some electrical measurements were performed on the prepared thin films. XRD results of SrBi2(Ta1- x, Nb x)2O9 films (0≤x≤1) showed that niobium ions substitute for tantalum ions in an arbitrary ratio without any change of the layer structure and lattice constants. Furthermore, XRD results of SrBi2 xTa2O9 films (0≤x≤1.5) indicated that the formation of the bismuth layer structure does not always require an accurate bismuth content. The layer structure was formed above 50% of the stoichiometric bismuth content in the general formula. SrBi2(Ta1- x, Nb x)2O9 films with various Ta/Nb ratios have large enough remanent polarization for nonvolatile memory application and have shown high fatigue resistance against 1011 cycles of full switching of the remanent polarization. Mixture films of the three compounds were also investigated.

  12. Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

    Science.gov (United States)

    Podgornyi, Yu. V.; Vorotilov, K. A.; Sigov, A. S.

    2018-03-01

    Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p-n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.

  13. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  14. Modeling two-phase ferroelectric composites by sequential laminates

    International Nuclear Information System (INIS)

    Idiart, Martín I

    2014-01-01

    Theoretical estimates are given for the overall dissipative response of two-phase ferroelectric composites with complex particulate microstructures under arbitrary loading histories. The ferroelectric behavior of the constituent phases is described via a stored energy density and a dissipation potential in accordance with the theory of generalized standard materials. An implicit time-discretization scheme is used to generate a variational representation of the overall response in terms of a single incremental potential. Estimates are then generated by constructing sequentially laminated microgeometries of particulate type whose overall incremental potential can be computed exactly. Because they are realizable, by construction, these estimates are guaranteed to conform with any material constraints, to satisfy all pertinent bounds and to exhibit the required convexity properties with no duality gap. Predictions for representative composite and porous systems are reported and discussed in the light of existing experimental data. (paper)

  15. Theoretical model for thin ferroelectric films and the multilayer structures based on them

    International Nuclear Information System (INIS)

    Starkov, A. S.; Pakhomov, O. V.; Starkov, I. A.

    2013-01-01

    A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data

  16. Theoretical model for thin ferroelectric films and the multilayer structures based on them

    Science.gov (United States)

    Starkov, A. S.; Pakhomov, O. V.; Starkov, I. A.

    2013-06-01

    A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.

  17. Theoretical model for thin ferroelectric films and the multilayer structures based on them

    Energy Technology Data Exchange (ETDEWEB)

    Starkov, A. S., E-mail: starkov@iue.tuwien.ac.at; Pakhomov, O. V. [St. Petersburg National Research Univeristy ITMO, Institute of Refrigeration and Biotechnologies (Russian Federation); Starkov, I. A. [Vienna University of Technology, Institute for Microelectronics (Austria)

    2013-06-15

    A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.

  18. Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

    Energy Technology Data Exchange (ETDEWEB)

    Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S G; Lazarev, V V; Yablonskii, S V; Palto, S P [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

  19. Modeling the influence of the seeding layer on the transition behavior of a ferroelectric thin film

    International Nuclear Information System (INIS)

    Oubelkacem, A.; Essaoudi, I.; Ainane, A.; Saber, M.; Dujardin, F.

    2011-01-01

    The transition properties of a ferroelectric thin film with seeding layers were studied using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions. The effect of interaction parameters for the seeding layer on the phase diagram was also examined. We calculated the critical temperature and the polarization of the ferroelectric thin film for different seeding layer structures. We found that the seeding layer can greatly increase the Curie temperature and the polarization.

  20. Magnetoelectric properties of magnetic/ferroelectric multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Sung-Ok; Eum, You-Jeong; Koo, Chang-Young; Lee, Hee-Young [Yeungnam University, Gyeongsan (Korea, Republic of); Park, Jung-Min [Osaka University, Osaka (Japan); Ryu, Jung-Ho [Korea Institute of Materials Science, Changwon (Korea, Republic of)

    2014-07-15

    Magnetic/ferroelectric multilayer thin films using PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) and two different magnetic materials, i.e., Terfenol-D and CuFe{sub 2}O{sub 4} (CuFO) layers, were fabricated, and their magnetoelectric (ME) coupling behavior was investigated. The PZT layer was first coated onto Pt/Ti/SiO{sub 2}/Si substrate by sol-gel spin coating method. Pt layer, which served as an electrode and a diffusion barrier, was grown on the PZT layer by using the ion-beam sputtering method. The ME voltage coefficients were calculated from the ME voltage data measured utilizing a magnetoelectric test system. The Terfenol-D/Pt/PZT films were found to show a higher in-plane ME voltage coefficient than that the CuFO/Pt/PZT films due primarily to the higher magnetostriction coefficient of Terfenol-D.

  1. Impact of symmetry on the ferroelectric properties of CaTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Biegalski, Michael D.; Qiao, Liang [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Gu, Yijia; Chen, Long-Qing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801 (United States); Mehta, Apurva [Stanford Synchrotron Lightsource SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); He, Qian; Borisevich, Albina [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Takamura, Yayoi, E-mail: ytakamura@ucdavis.edu [Department of Chemical Engineering and Materials Science, University of California Davis, Davis, California 95616 (United States)

    2015-04-20

    Epitaxial strain is a powerful tool to induce functional properties such as ferroelectricity in thin films of materials that do not possess ferroelectricity in bulk form. In this work, a ferroelectric state was stabilized in thin films of the incipient ferroelectric, CaTiO{sub 3}, through the careful control of the biaxial strain state and TiO{sub 6} octahedral rotations. Detailed structural characterization was carried out by synchrotron x-ray diffraction and scanning transmission electron microscopy. CaTiO{sub 3} films grown on La{sub 0.18}Sr{sub 0.82}Al{sub 0.59}Ta{sub 0.41}O{sub 3} (LSAT) and NdGaO{sub 3} (NGO) substrates experienced a 1.1% biaxial strain state but differed in their octahedral tilt structures. A suppression of the out-of-plane rotations of the TiO{sub 6} octahedral in films grown on LSAT substrates resulted in a robust ferroelectric I4 mm phase with remnant polarization ∼5 μC/cm{sup 2} at 10 K and T{sub c} near 140 K. In contrast, films grown on NGO substrates with significant octahedral tilting showed reduced polarization and T{sub c}. These results highlight the key role played by symmetry in controlling the ferroelectric properties of perovskite oxide thin films.

  2. In situ 2D diffraction as a tool to characterize ferroelectric and piezoelectric thin films

    Science.gov (United States)

    Khamidy, N. I.; Kovacova, V.; Bernasconi, A.; Le Rhun, G.; Vaxelaire, N.

    2017-08-01

    In this paper the application of 2D x-ray diffraction (XRD2) as a technique to characterize in situ during electrical cycling the properties of a ferroelectric and piezoelectric thin film is discussed. XRD2 is one type of XRD on which a 2D detector is used instead of a point detector. This technique enables simultaneous recording of many sample information in a much shorter time compared to conventional XRD. The discussion is focused especially on the data processing technique of the huge data acquired. The methodology to calculate an effective piezoelectric coefficient, analyze the phase and texture, and estimate the domain size and shape is described in this paper. This methodology is then applied to a lead zirconate titanate (PZT) thin film at the morphotropic phase boundary (MPB) composition (i.e. Pb[Zr0.52Ti0.48]O3) with a preferred orientation of (1 0 0). The in situ XRD2 characterization was conducted in the European synchrotron radiation facility (ESRF) in Grenoble, France. Since a high-energy beam with vertical resolution as small as 100 nm was used, a cross-sectional scan of the sample was performed over the entire thickness of the film. From these experimental results, a better understanding on the piezoelectricity phenomena in PZT thin film at MPB composition were achieved, providing original feedback between the elaboration processes and functional properties of the film.

  3. Composition dependence of the ferroelectric properties of lanthanum-modified bismuth titanate thin films grown by using pulsed-laser deposition

    CERN Document Server

    Bu, S D; Park, B H; Noh, T W

    2000-01-01

    Lanthanum-modified bismuth titanate, Bi sub 4 sub - sub x La sub x Ti sub 3 O sub 1 sub 2 (BLT), thin films with a La concentration of 0.25<=x<=1.00 were grown on Pt/Ti/SiO sub 2 /Si substrates by using pulsed-laser deposition. The BLT films showed well-saturated polarization-electric field curves whose remnant polarizations were 16.1 mu C/cm sup 2 , 27.8 mu C/cm sup 2 , 19.6 mu C/cm sup 2 , and 2.7 mu C/cm sup 2 , respectively, for x=0.25, 0.05, 0.75, and 1.00. The fatigue characteristics became better with increasing x up to 0.75. The Au/BLT/Pt capacitor with a La concentration of 0.50 showed an interesting dependence of the remanent polarization on the number of repetitive read/write cycles. On the other hand, the capacitor with a La concentration of 0.75 showed fatigue-free characteristics.

  4. Development of highly-ordered, ferroelectric inverse opal films using sol gel infiltration

    Science.gov (United States)

    Matsuura, N.; Yang, S.; Sun, P.; Ruda, H. E.

    2005-07-01

    Highly-ordered, ferroelectric, Pb-doped Ba0.7Sr0.3TiO3, inverse opal films were fabricated by spin-coating a sol gel precursor into a polystyrene artificial opal template followed by heat treatment. Thin films of the ferroelectric were independently studied and were shown to exhibit good dielectric properties and high refractive indices. The excellent quality of the final inverse opal film using this spin-coating infiltration method was confirmed by scanning electron microscopy images and the good correspondence between optical reflection data and theoretical simulations. Using this method, the structural and material parameters of the final ferroelectric inverse opal film were easily adjusted by template heating and through repeated infiltrations, without changes in the initial template or precursor. Also, crack-free inverse opal thin films were fabricated over areas comparable to that of the initial crack-free polystyrene template (˜100 by 100 μm2).

  5. Effects of Mn doping on the ferroelectric properties of PZT thin films

    International Nuclear Information System (INIS)

    Zhang Qi

    2004-01-01

    The effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on Pt/Ti/SiO 2 /Si substrates have been investigated. The composition of the PZT and Mn doping level are Pb(Zr 0.3 Ti 0.7 ) 1-x Mn x O 3 (x = 0,0.2,0.5,1,2,4 mol%). The PZT thin films doped with a small amount of Mn 2+ (x ≤ 1) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. However, excessive additions of manganese made the fatigue behaviour worse. We propose that the addition of small amounts of Mn is able to reduce the oxygen vacancy concentration due to the combination of Mn 2+ and oxygen vacancies in PZT films, forming Mn 4+ ions. The interfacial layer between the Pt electrode and PZT films and Mn-doped PZT (x = 4) was detected by measuring the dielectric constant of thin films of different thickness. However, this interfacial layer was not detected in Mn-doped PZT (x = 1). These observations support the concept of the preferential electromigration of oxygen vacancies into sites in planes parallel to the electrodes, which is probably responsible for the hysteretic fatigue

  6. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  7. Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films

    KAUST Repository

    Hu, Weijin

    2014-04-24

    In this work, switching dynamics of poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 ...MV/m and 180 domain wall energy of 60 ...mJ/m 2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications.

  8. Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films

    KAUST Repository

    Hu, Weijin; Juo, Deng-Ming; You, Lu; Wang, Junling; Chen, Yi-Chun; Chu, Ying-Hao; Wu, Tao

    2014-01-01

    In this work, switching dynamics of poly(vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 ...MV/m and 180 domain wall energy of 60 ...mJ/m 2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications.

  9. Catalytic behaviors of ruthenium dioxide films deposited on ferroelectrics substrates, by spin coating process

    International Nuclear Information System (INIS)

    Khachane, M.; Nowakowski, P.; Villain, S.; Gavarri, J.R.; Muller, Ch.; Elaatmani, M.; Outzourhite, A.; Luk'yanchuk, I.; Zegzouti, A.; Daoud, M.

    2007-01-01

    Catalytic ruthenium dioxide films were deposited by spin-coating process on ferroelectric films mainly constituted of SrBi 2 Ta 2 O 9 (SBT) and Ba 2 NaNb 5 O 15 (BNN) phases. After thermal treatment under air, these ferroelectric-catalytic systems were characterized by X-ray diffraction and scanning electron microscopy (SEM). SEM images showed that RuO 2 film morphology depended on substrate nature. A study of CH 4 conversion into CO 2 and H 2 O was carried out using these catalytic-ferroelectric multilayers: the conversion was analyzed from Fourier transform infrared (FTIR) spectroscopy, at various temperatures. Improved catalytic properties were observed for RuO 2 films deposited on BNN oxide layer

  10. Low temperature dielectric relaxation and charged defects in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    A. Artemenko

    2013-04-01

    Full Text Available We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

  11. Characterization of Phase Transitions in PZT Ferroelectric films with spectral Ellipsometry

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

    11-12, - (2002), s. 377-380 ISSN 0447-6441 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010921 Keywords : ferroelectric film * phase transition * film profile Subject RIV: BH - Optics, Masers, Lasers

  12. The origin of the residual conductivity of GaN films on ferroelectric materials

    Science.gov (United States)

    Lee, Kyoung-Keun; Cai, Zhuhua; Ziemer, Katherine; Doolittle, William Alan

    2009-08-01

    In this paper, the origin of the conductivity of GaN films grown on ferroelectric materials was investigated using XPS, AES, and XRD analysis tools. Depth profiles confirmed the existence of impurities in the GaN film originating from the substrates. Bonding energy analysis from XPS and AES verified that oxygen impurities from the substrates were the dominant origin of the conductivity of the GaN film. Furthermore, Ga-rich GaN films have a greater chance of enhancing diffusion of lithium oxide from the substrates, resulting in more substrate phase separation and a wider inter-mixed region confirmed by XRD. Therefore, the direct GaN film growth on ferroelectric materials causes impurity diffusion from the substrates, resulting in highly conductive GaN films. Future work needs to develop non-conductive buffer layers for impurity suppression in order to obtain highly resistive GaN films.

  13. Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

    International Nuclear Information System (INIS)

    Kim, D J; Gruverman, A; Connell, J G; Seo, S S A

    2016-01-01

    Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO 3 and Pb(Zr,Ti)O 3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO 3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO 3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. (paper)

  14. Tunable band gap in epitaxial ferroelectric Ho(Mn,Ga)O{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Daesu; Noh, Tae Won, E-mail: twnoh@snu.ac.kr [Center for Correlated Electron Systems, Institute for Basic Science, Seoul 151-742 (Korea, Republic of); Department of Physics and Astronomy, Seoul National University, Seoul 151-742 (Korea, Republic of); Choi, Woo Seok [Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2016-05-09

    Ferroelectrics have recently attracted attention as a new class of materials for use in optical and photovoltaic devices. We studied the electronic properties in epitaxially stabilized ferroelectric hexagonal Ho(Mn{sub 1−x}Ga{sub x})O{sub 3} (x = 0, 0.33, 0.67, and 1) thin films. Our films exhibited systematic changes in electronic structures, such as bandgap and optical transitions, according to the Ga concentration. In particular, the bandgap increased systematically from 1.4 to 3.2 eV, including the visible light region, with increasing Ga concentration from x = 0 to 1. These systematic changes, attributed to lattice parameter variations in epitaxial Ho(Mn{sub 1−x}Ga{sub x})O{sub 3} films, should prove useful for the design of optoelectronic devices based on ferroelectrics.

  15. Manipulating the ferroelectric polarization state of BaTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Datta, S.; Rioult, M.; Stanescu, D.; Magnan, H.; Barbier, A., E-mail: antoine.barbier@cea.fr

    2016-05-31

    Controlling the ferroelectric polarization at macroscopic or microscopic levels is crucial in the framework of the development of ferroelectric materials used in yet challenging photo-electrochemical (PEC) cells and spintronic applications. We report here on polarization methods allowing to electrically polarize prototypical samples of BaTiO{sub 3} (001) films. Epitaxial single crystalline layers were grown up to a thickness of 25 nm by atomic oxygen assisted molecular beam epitaxy on 1 at.% Nb doped SrTiO{sub 3} (001) single crystals. The samples were both microscopically and macroscopically polarized using Piezoresponse Force Microscopy and electrochemical poling in an electrolyte respectively. In addition we demonstrate the possibility to retrieve a quasi-native mixed ferroelectric polarization state after annealing. These polarization methods may be applied to many other ferroelectric thin films. - Highlights: • Ferroelectricity of BaTiO{sub 3} layers can be micro- and macroscopically controlled. • Microscopic ferroelectric domains are defined with piezoresponse force microscopy. • Poling in a LiClO{sub 4} electrolyte is a macroscopic poling method. • Air annealing above the Curie temperature “resets” the polarization state.

  16. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  17. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    International Nuclear Information System (INIS)

    Misirlioglu, I B; Yildiz, M

    2013-01-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

  18. Ferroelectricity at the nanoscale basics and applications

    CERN Document Server

    Fridkin, Vladimir

    2014-01-01

    This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films,  presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

  19. Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

    Science.gov (United States)

    Haridasan, Vrinda

    Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

  20. Piezoelectricity and ferroelectricity of cellular polypropylene electrets films characterized by piezoresponse force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Hongchen; Sun, Yao; Zhou, Xilong; Li, Yingwei [LTCS and Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); Li, Faxin, E-mail: lifaxin@pku.edu.cn [LTCS and Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871 (China); HEDPS and Center for Applied Physics and Technology, Peking University, Beijing (China)

    2014-08-14

    Cellular electrets polymer is a new ferroelectret material exhibiting large piezoelectricity and has attracted considerable attentions in researches and industries. Property characterization is very important for this material and current investigations are mostly on macroscopic properties. In this work, we conduct nanoscale piezoelectric and ferroelectric characterizations of cellular polypropylene (PP) films using piezoresponse force microscopy (PFM). First, both the single-frequency PFM and dual-frequency resonance-tracking PFM testings were conducted on the cellular PP film. The localized piezoelectric constant d{sub 33} is estimated to be 7–11pC/N by correcting the resonance magnification with quality factor and it is about one order lower than the macroscopic value. Next, using the switching spectroscopy PFM (SS-PFM), we studied polarization switching behavior of the cellular PP films. Results show that it exhibits the typical ferroelectric-like phase hysteresis loops and butterfly-shaped amplitude loops, which is similar to that of a poly(vinylidene fluoride) (PVDF) ferroelectric polymer film. However, both the phase and amplitude loops of the PP film are intensively asymmetric, which is thought to be caused by the nonzero remnant polarization after poling. Then, the D-E hysteresis loops of both the cellular PP film and PVDF film were measured by using the same wave form as that used in the SS-PFM, and the results show significant differences. Finally, we suggest that the ferroelectric-like behavior of cellular electrets films should be distinguished from that of typical ferroelectrics, both macroscopically and microscopically.

  1. Ferroelectricity and Piezoelectricity in Free-Standing Polycrystalline Films of Plastic Crystals.

    Science.gov (United States)

    Harada, Jun; Yoneyama, Naho; Yokokura, Seiya; Takahashi, Yukihiro; Miura, Atsushi; Kitamura, Noboru; Inabe, Tamotsu

    2018-01-10

    Plastic crystals represent a unique compound class that is often encountered in molecules with globular structures. The highly symmetric cubic crystal structure of plastic crystals endows these materials with multiaxial ferroelectricity that allows a three-dimensional realignment of the polarization axes of the crystals, which cannot be achieved using conventional molecular ferroelectric crystals with low crystal symmetry. In this work, we focused our attention on malleability as another characteristic feature of plastic crystals. We have synthesized the new plastic/ferroelectric ionic crystals tetramethylammonium tetrachloroferrate(III) and tetramethylammonium bromotrichloroferrate(III), and discovered that free-standing translucent films can be easily prepared by pressing powdered samples of these compounds. The thus obtained polycrystalline films exhibit ferroelectric polarization switching and a relatively large piezoelectric response at room temperature. The ready availability of functional films demonstrates the practical utility of such plastic/ferroelectric crystals, and considering the vast variety of possible constituent cations and anions, a wide range of applications should be expected for these unique and attractive functional materials.

  2. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

  3. Morphology-dependent photo-induced polarization recovery in ferroelectric thin films

    Science.gov (United States)

    Wang, J. Y.; Liu, G.; Sando, D.; Nagarajan, V.; Seidel, J.

    2017-08-01

    We investigate photo-induced ferroelectric domain switching in a series of Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 (PZT/LSMO) bilayer thin films with varying surface morphologies by piezoresponse force microscopy under light illumination. We demonstrate that reverse poled ferroelectric regions can be almost fully recovered under laser irradiation of the PZT layer and that the recovery process is dependent on the surface morphology on the nanometer scale. The recovery process is well described by the Kolmogorov-Avrami-Ishibashi model, and the evolution speed is controlled by light intensity, sample thickness, and initial write voltage. Our findings shed light on optical control of the domain structure in ferroelectric thin films with different surface morphologies.

  4. X-ray diffraction stress analysis of ferroelectric thin films with ideal (h k l) textures considering the piezoelectric coupling effect

    International Nuclear Information System (INIS)

    Wu Huaping; Wu Linzhi; Li Jiquan; Chai Guozhong; Du Shanyi

    2010-01-01

    Ferroelectric thin films present large residual stress and strong texture during preparation, which affect the mechanical, dielectric and piezoelectric properties of the thin films. The determination of residual stresses in ferroelectric thin films with different textures is therefore very important. In this paper, an extended crystallite group model to evaluate the residual stresses of ferroelectric thin films using X-ray diffraction is proposed by considering the constitutive equation of orthogonally anisotropic ferroelectric medium. The effects of anisotropy and piezoelectric coupling on residual stresses of ferroelectric thin films are analyzed. X-ray stress factors for ideal (h k l)-textured ferroelectric thin films are obtained. An example of calculating the residual stresses of tetragonal perovskite ferroelectric thin films with (1 1 1) and (1 0 0) textures using the extended model is provided to validate the model.

  5. Ferroelectricity down to at least 2 nm in multiferroic BiFeO3 epitaxial thin films

    International Nuclear Information System (INIS)

    Bea, H.; Fusil, S.; Bouzehouane, K.; Sirena, M.; Herranz, G.; Jacquet, E.; Contour, J.-P.; Barthelemy, A.; Bibes, M.

    2006-01-01

    We report here on the preservation of ferroelectricity down to 2 nm in BiFeO 3 ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO 3 as a lead-free ferroelectric and multiferroic material for nanoscale devices. (author)

  6. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

    Science.gov (United States)

    Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

    2018-03-01

    For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this. ).

  7. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

    Energy Technology Data Exchange (ETDEWEB)

    Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

    2018-01-25

    For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

  8. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou Hao; Hong Jiawang; Zhang Yihui; Li Faxin; Pei Yongmao; Fang Daining

    2012-01-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO 3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  9. Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

    CERN Document Server

    Okuyama, Masanori

    2005-01-01

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

  10. Far infrared and terahertz spectroscopy of ferroelectric soft modes in thin films: a review

    Czech Academy of Sciences Publication Activity Database

    Petzelt, Jan; Kamba, Stanislav

    2016-01-01

    Roč. 503, č. 1 (2016), s. 19-44 ISSN 0015-0193 R&D Projects: GA ČR GA15-08389S Institutional support: RVO:68378271 Keywords : soft mode * central mode * ferroelectric thin film * terahertz spectroscopy * far-infrared spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.551, year: 2016

  11. Polarization retention loss in PbTiO3 ferroelectric films due to leakage currents

    NARCIS (Netherlands)

    Morelli, A.; Venkatesan, Sriram; Palasantzas, G.; Kooi, B. J.; De Hosson, J. Th. M.

    2007-01-01

    The relationship between retention loss in single crystal PbTiO3 ferroelectric thin films and leakage currents is demonstrated by piezoresponse and conductive atomic force microscopy measurements. It was found that the polarization reversal in the absence of an electric field followed a stretched

  12. Ferroelectric Thin-Film Capacitors and Piezoelectric Switches for Mobile Communication Applications

    NARCIS (Netherlands)

    Klee, Mareike; van Esch, Harry; Keur, Wilco; Kumar, Biju; van Leuken-Peters, Linda; Liu, Jin; Mauczok, Rüdiger; Neumann, Kai; Reimann, Klaus; Renders, Christel; Roest, Aarnoud L.; Tiggelman, M.P.J.; de Wild, Marco; Wunnicke, Olaf; Zhao, Jing

    2009-01-01

    Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100

  13. Dynamics of space and polarization charges of ferroelectric thin films measured by atomic force microscopy

    International Nuclear Information System (INIS)

    Oh, Y.J.; Lee, J.H.; Jo, W.

    2006-01-01

    Retention behavior and local hysteresis characteristics in Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films on Pt electrodes have been investigated by electrostatic force microscopy (EFM). A sol-gel method is used to synthesize PZT thin films and drying conditions are carefully explored over a wide range of temperature. Decay and retention mechanisms of single-poled and reverse-poled regions of the ferroelectric thin films are explained by space charge redistribution. Trapping behavior of space charges is dependent on the nature of interface between ferroelectric thin films and bottom electrodes. Local measurement of polarization-electric field curves by EFM shows inhomogeneous space charge entrapment

  14. Influence of test capacitor features on piezoelectric and dielectric measurement of ferroelectric films.

    Science.gov (United States)

    Wang, Zhihong; Lau, Gih Keong; Zhu, Weiguang; Chao, Chen

    2006-01-01

    This paper presents both theoretical and numerical analyses of the piezoelectric and dielectric responses of a highly idealized film-on-substrate system, namely, a polarized ferroelectric film perfectly bonded to an elastic silicon substrate. It shows that both effective dielectric and piezoelectric properties of the films change with the size and configuration of the test capacitor. There exists a critical electrode size that is smaller than the diameter of the commonly used substrate. The effective film properties converge to their respective constrained values as capacitor size increases to the critical size. If capacitor size is smaller than the critical size, the surface displacement at the top electrode deviates from the net thickness change in response to an applied voltage because the film is deformable at the film/substrate interface. The constrained properties of the films depend only on those of bulk ferroelectrics but are independent of film thickness and substrate properties. The finding of the critical capacitor size together with analytical expressions of the constrained properties makes it possible to realize consistent measurement of piezoelectric and dielectric properties of films. A surface scanning technique is recommended to measure the profile of piezoresponses of the film so that the constrained properties of the film can be identified accurately.

  15. Imaging Local Polarization in Ferroelectric Thin Films by Coherent X-Ray Bragg Projection Ptychography

    Science.gov (United States)

    Hruszkewycz, S. O.; Highland, M. J.; Holt, M. V.; Kim, Dongjin; Folkman, C. M.; Thompson, Carol; Tripathi, A.; Stephenson, G. B.; Hong, Seungbum; Fuoss, P. H.

    2013-04-01

    We used x-ray Bragg projection ptychography (BPP) to map spatial variations of ferroelectric polarization in thin film PbTiO3, which exhibited a striped nanoscale domain pattern on a high-miscut (001) SrTiO3 substrate. By converting the reconstructed BPP phase image to picometer-scale ionic displacements in the polar unit cell, a quantitative polarization map was made that was consistent with other characterization. The spatial resolution of 5.7 nm demonstrated here establishes BPP as an important tool for nanoscale ferroelectric domain imaging, especially in complex environments accessible with hard x rays.

  16. Improvement of the fatigue and the ferroelectric properties of PZT films through a LSCO seed layer

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, Sofia A.S., E-mail: sofiarodrigues@fisica.uminho.pt; Silva, José P.B.; Khodorov, Anatoli; Martín-Sánchez, Javier; Pereira, M.; Gomes, M.J.M.

    2013-11-01

    Highlights: • Pulsed laser deposited PZT thin films. • Seed layer effect on the structural and ferroelectric properties of the PZT films. • The stability of P{sub r} was improved with the introduction of the LSCO layer. -- Abstract: The ability to optimizate the preparation of Lead Zirconate Titanate (PZT) films on platinized Si substrate by pulsed laser deposition was demonstrated. The effect of the modification of the interface film/electrode through the use of a (La,Sr)CoO{sub 3} (LSCO) seed layer on the remnant polarization, fatigue endurance and stress in PZT films was studied. An improvement on the ferroelectric properties was found with the using of the LSCO layer. A remnant polarization (P{sub r}) of 19.8 μC/cm{sup 2} and 4.4 μC/cm{sup 2} for films with and without the LSCO layer were found. In the same way the polarization fatigue decreases significantly after deposition of the LSCO layer between the film and substrate. Atomic force microscopy (AFM) images revealed a different growth process in the films. Current–voltage (I–V) measurements showed that the use of LSCO seed layer improves the leakage current and, on the other hand the conduction mechanisms in the film without LSCO, after the fatigue test, was found to be changed from Schottky to Poole–Frenkel. The trap activation energy (about 0.14 eV) determined from Poole–Frenkel mode agrees well with the energy level of oxygen vacancies. The films stresses were estimated by XRD in order to explain the improvement on the structure and consequentially ferroelectric properties of the films. The model proposed by Dawber and Scott was found to be in agreement with our experimental data, which seems to predict that the oxygen vacancies play an important role on fatigue.

  17. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    International Nuclear Information System (INIS)

    Zapata-Navarro, A.; Marquez-Herrera, A.; Cruz-Jauregui, M.P.; Calzada, M.L.

    2005-01-01

    In this work, we present the variation of the ferroelectric properties of Ba 1-x Sr x TiO 3 films deposited on Pt/TiO 2 /SiO 2 /Si substrates by RF co-sputtering with 0≤x≤1. The co-sputtering was done using a single magnetron with BaTiO 3 /SrTiO 3 targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Ferroelectric properties of barium strontium titanate thin films grown by RF co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zapata-Navarro, A.; Marquez-Herrera, A. [CICATA-IPN, Km. 14.5 Carretera Tampico-Puerto Ind. Altamira, Altamira Tamaulipas 89600 (Mexico); Cruz-Jauregui, M.P. [CCMC-UNAM, Km. 107 Carretera Tijuana-Ensenada, Ensenada B.C. 22800 (Mexico); Calzada, M.L. [ICMM (CSIC) Madrid, Cantoblanco Madrid 28049 (Spain)

    2005-08-01

    In this work, we present the variation of the ferroelectric properties of Ba{sub 1-x}Sr{sub x}TiO{sub 3} films deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates by RF co-sputtering with 0{<=}x{<=}1. The co-sputtering was done using a single magnetron with BaTiO{sub 3}/SrTiO{sub 3} targets in a pie mosaics configuration. Smooth and uniform films were obtained using the same conditions of growth and annealing temperature. The X-ray diffraction and EDS results show that the processes were managed to obtain crystalline materials with x from 0 to 1. The behaviour of P-E loops suggests that the ferroelectric properties of the films were tuned by changing the concentration of the cation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Probing-models for interdigitated electrode systems with ferroelectric thin films

    Science.gov (United States)

    Nguyen, Cuong H.; Nigon, Robin; Raeder, Trygve M.; Hanke, Ulrik; Halvorsen, Einar; Muralt, Paul

    2018-05-01

    In this paper, a new method to characterize ferroelectric thin films with interdigitated electrodes is presented. To obtain accurate properties, all parasitic contributions should be subtracted from the measurement results and accurate models for the ferroelectric film are required. Hence, we introduce a phenomenological model for the parasitic capacitance. Moreover, two common analytical models based on conformal transformations are compared and used to calculate the capacitance and the electric field. With a thin film approximation, new simplified electric field and capacitance formulas are derived. By using these formulas, more consistent CV, PV and stress-field loops for samples with different geometries are obtained. In addition, an inhomogeneous distribution of the permittivity due to the non-uniform electric field is modelled by finite element simulation in an iterative way. We observed that this inhomogeneous distribution can be treated as a homogeneous one with an effective value of the permittivity.

  20. A flexible tactile-feedback touch screen using transparent ferroelectric polymer film vibrators

    International Nuclear Information System (INIS)

    Ju, Woo-Eon; Moon, Yong-Ju; Park, Cheon-Ho; Choi, Seung Tae

    2014-01-01

    To provide tactile feedback on flexible touch screens, transparent relaxor ferroelectric polymer film vibrators were designed and fabricated in this study. The film vibrator can be integrated underneath a transparent cover film or glass, and can also produce acoustic waves that cause a tactile sensation on human fingertips. Poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] polymer was used as the relaxor ferroelectric polymer because it produces a large strain under applied electric fields, shows a fast response, and has excellent optical transparency. The natural frequency of this tactile-feedback touch screen was designed to be around 200–240 Hz, at which the haptic perception of human fingertips is the most sensitive; therefore, the resonance of the touch screen at its natural frequency provides maximum haptic sensation. A multilayered relaxor ferroelectric polymer film vibrator was also demonstrated to provide the same vibration power at reduced voltage. The flexible P(VDF-TrFE-CTFE) film vibrators developed in this study are expected to provide tactile sensation not only in large-area flat panel displays, but also in flexible displays and touch screens. (papers)

  1. Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

    Science.gov (United States)

    Klug, Jeffrey A.

    The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

  2. Hysteresis loop behaviors of ferroelectric thin films:A Monte Carlo simulation study

    Institute of Scientific and Technical Information of China (English)

    C. M. Bedoya-Hincapi´e; H. H. Ortiz-´Alvarez; E. Restrepo-Parra; J. J. Olaya-Fl´orez; J. E. Alfonso

    2015-01-01

    The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole–dipole interaction in the transversal (x–y) direction, and the nearest dipole–dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.

  3. Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

    Science.gov (United States)

    M. Bedoya-Hincapié, C.; H. Ortiz-Álvarez, H.; Restrepo-Parra, E.; J. Olaya-Flórez, J.; E. Alfonso, J.

    2015-11-01

    The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal (x-y) direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response. Project sponsored by the research departments of the Universidad Nacional de Colombia DIMA and DIB under Project 201010018227-“Crecimiento y caracterización eléctrica y estructural de películas delgadas de BixTiyOz producidas mediante Magnetrón Sputtering” and Project 12920-“Desarrollo teóricoexperimental de nanoestructuras basadas en Bismuto y materiales similares” and “Bisnano Project.”

  4. Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation

    Science.gov (United States)

    Scott, J. F.; Hershkovitz, A.; Ivry, Y.; Lu, H.; Gruverman, A.; Gregg, J. M.

    2017-12-01

    Recent experimental work shows that ferroelectric switching can occur in large jumps in which ferroelastic superdomains switch together, rather than having the numerous smaller ferroelectric domains switch within them. In this sense, the superdomains play a role analogous to that of Abrikosov vortices in thin superconducting films under the Kosterlitz-Thouless framework, which control the dynamics more than individual Cooper pairs within them do. Here, we examine the dynamics of ferroelastic superdomains in ferroelastic ferroelectrics and their role in switching devices such as memories. Jamming of ferroelectric domains in thin films has revealed an unexpected time dependence of t-1/4 at long times (hours), but it is difficult to discriminate between power-law and exponential relaxation. Other aspects of this work, including spatial period doubling of domains, led to a description of ferroelastic domains as nonlinear processes in a viscoelastic medium, which produce folding and metastable kinetically limited states. This ¼ exponent is a surprising agreement with the well-known value of ¼ for coarsening dynamics in viscoelastic media. We try to establish a link between these two processes, hitherto considered unrelated, and with superdomains and domain bundles. We note also that high-Tc superconductors share many of the ferroelastic domain properties discussed here and that several new solar cell materials and metal-insulator transition systems are ferroelastic.

  5. The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Guan, Yan; Liu, Xiaohua; Zhou, Dayu; Xu, Jin; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO 2 thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO 2 thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Guan, Yan; Liu, Xiaohua [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian (China); Zhou, Dayu [Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu (China); Xu, Jin [Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian (China); Cao, Fei; Dong, Xianlin [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai (China); Mueller, Johannes [Fraunhofer IPMS-CNT, Dresden (Germany); Schenk, Tony; Schroeder, Uwe [NaMLab gGmbH/TU Dresden (Germany)

    2015-10-15

    A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO{sub 2} thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO{sub 2} thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Experimental studies on the nonlinear dynamics of ferroelectric thin films and layered ferroelectricum/semiconductor structures in oscillating systems

    International Nuclear Information System (INIS)

    Barz, Kay

    2010-01-01

    In this work experimental techniques for characterization of ferroelectric nm-thin films and ferroelectric/semiconductor structures by means of nonlinear phenomena are discussed. The thin film sample is applied in a series resonant circuit. By recording time series data and amplitude-frequency-characteristics (resonance frequency shift), the nonlinear behavior can be analyzed with respect to the theoretical aspects of these effects in the framework of nonlinear dynamics. The evolving ferroelectric hysteresis is represented by the amplitude-frequency-characteristic in a very detailed form. Interpretations are presented on how transient alterations like fatigue or retention loss, affect the amplitude-frequency-characteristics. Time series analysis allows to separate the specific influence of the nonlinear components and their corresponding time constants. The work closes with suggestions for a systematic application of the presented techniques for an extended characterization of ferroelectric thin films. (orig.)

  8. Effects of surface modification on the critical behaviour in multiple-surface-layer ferroelectric thin films

    International Nuclear Information System (INIS)

    Lu, Z X

    2013-01-01

    Using the usual mean-field theory approximation, the critical behaviour (i.e. the Curie temperature T c and the critical surface transverse field Ω sc ) in a multiple-surface-layer ferroelectric thin film is studied on the basis of the spin- 1/2 transverse Ising model. The dependence of the Curie temperature T c on the surface transverse field Ω s and the surface layer number N s are discussed in detail. Meanwhile the dependence of the critical surface transverse field Ω sc on the surface layer number N s is also examined. The numerical results indicate that the critical behaviour of ferroelectric thin films is obviously affected by modifications of the surface transverse field Ω s and surface layer number N s .

  9. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Yasser; Bhansali, Unnat Sampatraj; Almadhoun, Mahmoud N.; Odeh, Ihab N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. High-performance ferroelectric memory based on phase-separated films of polymer blends

    KAUST Repository

    Khan, Yasser

    2013-10-29

    High-performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene-fluoride-trifluoroethylene) (P(VDF-TrFE)) and highly insulating poly(p-phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF-TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (Rrms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 106 cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. THIN FILMS OF A NEW ORGANIC SINGLE-COMPONENT FERROELECTRIC 2-METHYLBENZIMIDAZOLE

    Directory of Open Access Journals (Sweden)

    E. V. Balashova

    2016-09-01

    Full Text Available Subject of Research.We present results of structural and dielectric study of organic ferroelectric 2-methylbenzimidazole (MBI thin films. Method. The films have been grown on substrates of leuco-sapphire, fused and crystalline silica, neodymium gallate, bismuth germanate, gold, aluminium, platinum. The films have been grown by two different methods: substrate covering by ethanol solution of MBI and subsequent ethanol evaporation; sublimation at the temperature near 375 K under atmospheric pressure. Crystallographic orientation studies have been performed by means of «DRON-3» X-ray diffractometer, block structure of the films has been determined by «LaboPol-3» polarizing microscope. Small-signal dielectric response has been received with the use of «MIT 9216A» digital LCR-meter, while strong-signal dielectric response has been studied by Sawyer-Tower circuit. Main Resuts. We have shown that the films obtained by evaporation are continuous and textured. Obtained film structure depends on the concentration of the solution. Films may consist of blocks that are splitted crystals like spherulite. Spontaneous polarization components in such films may be directed both perpendicularly and in the film plane. We have also obtained structures consisting of single-crystal blocks with spontaneous polarization components being allocated in the film plane. Block sizes vary from a few to hundreds of microns. Films obtained by sublimation are amorphous or dendritic. The dielectric properties of the films obtained by evaporation have been studied. We have shown that the dielectric constant and dielectric loss tangent increase under heating. The dielectric hysteresis loops are observed at the temperature equal to 291-379 K. The remnant polarization increases with temperature for constant amplitude of the external electric field, and achieves 4.5mC/cm2, while the coercive field remains constant. We propose that such behavior is explained by increase of the

  12. Structural and ferroelectric properties of Sr1−xBaxBi2Nb2O9 thin films obtained by dip-coating

    Directory of Open Access Journals (Sweden)

    Y. González-Abreu

    2017-10-01

    Full Text Available The paper presents the structural and ferroelectric results for Sr1−xBaxBi2Nb2O9(x=0.30; 0.85 thin films, which were obtained by using dip-coating. The solutions containing the desirable ions were prepared from the powders of the previous studied ceramic samples. The films were deposited at room temperature on Fluorine-doped Tin Oxide (FTO substrates and submitted to a heat treatment for crystallization. The films were characterized by using scanning microscopy electronic, energy dispersive spectroscopy and ellipsometry. Hysteresis ferroelectric loops were obtained, at room temperature, by using a Sawyer-Tower circuit at several frequencies. A well-defined grain structure was observed for both compositions. The energy dispersive spectroscopy (EDS measurements revealed the presence of the corresponding elements from the chemical composition of the ceramic systems. The band-gap energy was around 3.3eV for both samples. Typical hysteresis loops for normal and relaxor ferroelectrics were obtained for x=0.30 and 0.85, respectively.

  13. Effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate thin films: Experimental evidence and implications

    Science.gov (United States)

    Lou, X. J.; Zhang, H. J.; Luo, Z. D.; Zhang, F. P.; Liu, Y.; Liu, Q. D.; Fang, A. P.; Dkhil, B.; Zhang, M.; Ren, X. B.; He, H. L.

    2014-09-01

    The effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate (PZT) thin film was systematically investigated. It was found that electrical fatigue strongly affects the Rayleigh behaviour of the PZT film. Both the reversible and irreversible Rayleigh coefficients decrease with increasing the number of switching cycles. This phenomenon is attributed to the growth of an interfacial degraded layer between the electrode and the film during electrical cycling. The methodology used in this work could serve as an alternative way for evaluating the fatigue endurance and degradation in dielectric properties of ferroelectric thin-film devices during applications.

  14. Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

    Science.gov (United States)

    Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

    2009-01-01

    The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2, respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

  15. Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

    International Nuclear Information System (INIS)

    Park, Hyeong-Ho; Lee, Hong-Sub; Park, Hyung-Ho; Hill, Ross H.; Hwang, Yun Taek

    2009-01-01

    The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm 2 , respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.

  16. Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

    Science.gov (United States)

    He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

    2010-09-01

    We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

  17. A theoretical investigation of the influence of the surface effect on the ferroelectric property of strained barium titanate film

    Science.gov (United States)

    Fang, Chao; Liu, Wei Hua

    2017-07-01

    The influence of the surface effect on the ferroelectric property of strained barium titanate film has been investigated. In this study, based on time-dependent Ginsburg-Landau-Devonshire thermodynamic theory, the surface effects have been simulated by introducing a surface constant, which leads to the strained BaTiO3 film consisting of inner tetragonal core and gradient lattice strain layer. Further, surface effects produce a depolarization field which has a dominant effect on the ferroelectric properties of the films. The spontaneous polarization, dielectric properties and ferroelectric hysteresis loop of BaTiO3 film are calculated under different boundary conditions. Theoretical and experimental results for strained BaTiO3 film are compared and discussed.

  18. Total-dose radiation-induced degradation of thin film ferroelectric capacitors

    International Nuclear Information System (INIS)

    Schwank, J.R.; Nasby, R.D.; Miller, S.L.; Rodgers, M.S.; Dressendorfer, P.V.

    1990-01-01

    Thin film PbZr y Ti 1-y O 3 (PZT) ferroelectric memories offer the potential for radiation-hardened, high-speed nonvolatile memories with good retention and fatigue properties. In this paper we explore in detail the radiation hardness of PZT ferroelectric capacitors. Ferroelectric capacitors were irradiated using x-ray and Co-60 sources to dose levels up to 16 Mrad(Si). The capacitors were characterized for their memory properties both before and after irradiation. The radiation hardness was process dependent. Three out of four processes resulted in capacitors that showed less than 30% radiation-induced degradation in retained polarization charge and remanent polarization after irradiating to 16 Mrad(Si). On the other hand, one of the processes showed significant radiation-induced degradation in retained polarization charge and remanent polarization at dose levels above 1 Mrad(Si). The decrease in retained polarization charge appears to be due to an alteration of the switching characteristics of the ferroelectric due to changes in the internal fields. The radiation-induced degradation is recoverable by a postirradiation biased anneal and can be prevented entirely if devices are cycled during irradiation. The authors have developed a model to simulate the observed degradation

  19. Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

    Science.gov (United States)

    Mukherjee, Devajyoti

    Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

  20. A general analytical equation for phase diagrams of an N-layer ferroelectric thin film with two surface layers

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Z X; Teng, B H; Rong, Y H; Lu, X H; Yang, X [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)], E-mail: phytbh@163.com

    2010-03-15

    Within the framework of effective-field theory with correlations, the phase diagrams of an N-layer ferroelectric thin film with two surface layers are studied by the differential operator technique based on the spin-1/2 transverse Ising model. A general analytical equation for the phase diagram of a ferroelectric thin film with arbitrary layer number as well as exchange interactions and transverse fields is derived, and then the effects of exchange interactions and transverse fields on phase diagrams are discussed for an arbitrary layer number N. Meanwhile, the crossover features, from the ferroelectric-dominant phase diagram (FPD) to the paraelectric-dominant phase diagram (PPD), for various parameters of an N-layer ferroelectric thin film with two surface layers are investigated. As a result, an N-independent common intersection point equation is obtained, and the three-dimensional curved surfaces for the crossover values are constructed. In comparison with the usual mean-field approximation, the differential operator technique with correlations reduces to some extent the ferroelectric features of a ferroelectric thin film.

  1. Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition

    International Nuclear Information System (INIS)

    Park, Hyeong-Ho; Park, Hyung-Ho; Hill, Ross H.

    2004-01-01

    The ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-doped lead zirconate titanate (PLZT) multilayer films formed by photochemical metal-organic deposition (PMOD) using photosensitive precursors have been characterized. The substitution of La for Pb was reported to induce improved ferroelectric properties, especially fatigue resistance, through the reduction of oxygen vacancies. The relation between La-substitution and the ferroelectric properties was investigated by characterization of the effect of the order of stacking four ferroelectric layers of PZT or PLZT in the multilayer films 4-PZT, PZT/2-PLZT/PZT, PLZT/2-PZT/PLZT, and 4-PLZT. The films with the PLZT layer at the top and bottom showed an improvement in the fatigue resistance. It was revealed that defect dipole such as O vacancy was reduced at the ferroelectric/Pt interface by doping with La. Also, the bottom layer, just on Pt substrate had a significant influence on the surface microstructure and growth orientation of ferroelectric film

  2. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Hao [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Hong Jiawang; Zhang Yihui [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Li Faxin [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Pei Yongmao, E-mail: peiym@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Fang Daining, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

    2012-09-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO{sub 3} thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  3. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Science.gov (United States)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  4. Preparation and electromagnetic properties of low-temperature sintered ferroelectric-ferrite composite ceramics

    International Nuclear Information System (INIS)

    Yue Zhenxing; Chen Shaofeng; Qi Xiwei; Gui Zhilun; Li Longtu

    2004-01-01

    For the purpose of multilayer chip EMI filters, the new ferroelectric-ferrite composite ceramics were prepared by mixing PMZNT relaxor ferroelectric powder with composition of 0.85Pb(Mg 1/3 Nb 2/3 )O 3 -0.1Pb(Ni 1/3 Nb 2/3 )O 3 -0.05PbTiO 3 and NiCuZn ferrite powder with composition of (Ni 0.20 Cu 0.20 Zn 0.60 )O(Fe 2 O 3 ) 0.97 at low sintering temperatures. A small amount of Bi 2 O 3 was added to low sintering temperature. Consequently, the dense composite ceramics were obtained at relative low sintering temperatures, which were lower than 940 deg. C. The X-ray diffractometer (XRD) identifications showed that the sintered ceramics retained the presence of distinct ferroelectric and ferrite phases. The sintering studies and scanning electron microscope (SEM) observations revealed that the co-existed two phases affect the sintering behavior and grain growth of components. The electromagnetic properties, such as dielectric constant and initial permeability, change continuously between those of two components. Thus, the low-temperature sintered ferroelectric-ferrite composite ceramics with tunable electromagnetic properties were prepared by adjusting the relative content of two components. These materials can be used for multilayer chip EMI filters with various properties

  5. Ferroelectric and Piezoelectric properties of (111) oriented lanthanum modified lead zirconate titanate film

    International Nuclear Information System (INIS)

    Dutta, Soma; Antony Jeyaseelan, A.; Sruthi, S.

    2014-01-01

    Lanthanum modified lead zirconate titanate (PLZT) thick film with molecular formula of Pb 0.92 La 0.08 (Zr 0.52 Ti 0.48 ) 0.98 O 3 was grown preferentially along (111) direction on Pt/SiO 2 /Si (platinum/silicon oxide/silicon) substrate by spin coating of chemical solution. The directional growth of the film was facilitated by platinum (Pt) (111) template and rapid thermal annealing. X-ray diffraction pattern and atomic force microscopy revealed the preferential growth of the PLZT film. The film was characterized for ferroelectric and detailed piezoelectric properties in a parallel plate capacitor (metal–PLZT–metal) configuration. Ferroelectric characterization of the film showed saturated hysteresis loop with remanent polarization and coercive electric field values of 10.14 μC/cm 2 and 42 kV/cm, respectively, at an applied field of 300 kV/cm. Longitudinal piezoelectric coefficient (d 33,f ) was measured by employing converse piezoelectric effect where electrical charge response and displacement were measured with electrical voltage excitation on the sample electrodes. The effective transverse piezoelectric coefficient (e 31,f ) was derived from charge measurement with an applied mechanical excitation strain by using the four point bending method. d 33,f and e 31,f coefficients of PLZT films were found to be 380 pm/V and − 0.831 C/m 2 respectively. - Highlights: • PLZT (111) film is prepared by spin coating of chemical sol on Pt (111) template. • Piezoelectric d 33 value (380 pm/V) of PLZT film is found 20% higher than PZT. • Transverse piezocoefficient e 31,f of PLZT film is reported for the first time

  6. Ferroelectric and Piezoelectric properties of (111) oriented lanthanum modified lead zirconate titanate film

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Soma, E-mail: som@nal.res.in; Antony Jeyaseelan, A.; Sruthi, S.

    2014-07-01

    Lanthanum modified lead zirconate titanate (PLZT) thick film with molecular formula of Pb{sub 0.92}La{sub 0.08}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.98}O{sub 3} was grown preferentially along (111) direction on Pt/SiO{sub 2}/Si (platinum/silicon oxide/silicon) substrate by spin coating of chemical solution. The directional growth of the film was facilitated by platinum (Pt) (111) template and rapid thermal annealing. X-ray diffraction pattern and atomic force microscopy revealed the preferential growth of the PLZT film. The film was characterized for ferroelectric and detailed piezoelectric properties in a parallel plate capacitor (metal–PLZT–metal) configuration. Ferroelectric characterization of the film showed saturated hysteresis loop with remanent polarization and coercive electric field values of 10.14 μC/cm{sup 2} and 42 kV/cm, respectively, at an applied field of 300 kV/cm. Longitudinal piezoelectric coefficient (d{sub 33,f}) was measured by employing converse piezoelectric effect where electrical charge response and displacement were measured with electrical voltage excitation on the sample electrodes. The effective transverse piezoelectric coefficient (e{sub 31,f}) was derived from charge measurement with an applied mechanical excitation strain by using the four point bending method. d{sub 33,f} and e{sub 31,f} coefficients of PLZT films were found to be 380 pm/V and − 0.831 C/m{sup 2} respectively. - Highlights: • PLZT (111) film is prepared by spin coating of chemical sol on Pt (111) template. • Piezoelectric d{sub 33} value (380 pm/V) of PLZT film is found 20% higher than PZT. • Transverse piezocoefficient e{sub 31,f} of PLZT film is reported for the first time.

  7. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7O3 for multi-bit storage application

    Directory of Open Access Journals (Sweden)

    Lu Qian

    2011-01-01

    Full Text Available Abstract In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7O3 (PZT] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

  8. Complex permittivity measurements of ferroelectric employing composite dielectric resonator technique

    Czech Academy of Sciences Publication Activity Database

    Krupka, J.; Zychowicz, T.; Bovtun, Viktor; Veljko, Sergiy

    2006-01-01

    Roč. 53, č. 10 (2006), s. 1883-1888 ISSN 0885-3010 R&D Projects: GA AV ČR(CZ) IAA1010213; GA ČR(CZ) GA202/04/0993; GA ČR(CZ) GA202/06/0403 Institutional research plan: CEZ:AV0Z10100520 Keywords : dielectric resonator * ferroelectrics * microwave measurements Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.729, year: 2006

  9. Optical refraction index and polarization profile of ferroelectric thin films

    Czech Academy of Sciences Publication Activity Database

    Glinchuk, M. D.; Eliseev, E. A.; Deineka, Alexander; Jastrabík, Lubomír; Suchaneck, G.; Sandner, T.; Gerlach, G.; Hrabovský, Miroslav

    2001-01-01

    Roč. 38, 1-4 (2001), s. 101-110 ISSN 1058-4587 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin film * refraction index * polarization * film thickness Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.512, year: 2001

  10. Oxygen tracer studies of ferroelectric fatigue in Pb(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Schloss, Lawrence F.; McIntyre, Paul C.; Hendrix, Bryan C.; Bilodeau, Steven M.; Roeder, Jeffrey F.; Gilbert, Stephen R.

    2002-01-01

    Long-range oxygen motion has been observed in Pt/Pb(Zr,Ti)O 3 /Ir thin-film structures after electrical fatigue cycling at room temperature. Through an exchange anneal, isotopic 18 O was incorporated as a tracer into bare Pb(Zr,Ti)O 3 (PZT) films, allowing secondary ion mass spectrometry measurements of the tracer profile evolution as a function of the number of polarization reversals. Observation of 18 O tracer redistribution during voltage cycling, which is presumably mediated by oxygen vacancy motion, was found to be strongly dependent upon the thermal history of the film. However, there was no strong correlation between the extent of 18 O tracer redistribution and the extent of polarization suppression induced by voltage cycling. Our results suggest that oxygen vacancy motion plays, at most, a secondary role in ferroelectric fatigue of PZT thin films

  11. Strain-induced structural, magnetic and ferroelectric properties of ...

    Indian Academy of Sciences (India)

    2017-07-25

    Jul 25, 2017 ... deposited on the composite film surface by DC sputtering techniques. The magnetic measurements of these composite films were performed using a vibratory sample magnetometer. (VSM). Ferroelectric properties of films were measured using a Precision multiferroic analyser. All measurements were per-.

  12. Growth of strained, ferroelectric NaNbO{sub 3} thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sellmann, Jan; Schwarzkopf, Jutta; Duk, Andreas; Kwasniewski, Albert; Schmidbauer, Martin; Fornari, Roberto [IKZ, Berlin (Germany)

    2012-07-01

    Due to its promising ferro-/piezoelectric properties and high Curie temperature NaNbO{sub 3} has attracted much attention. In contrast to bulk crystals, thin epitaxial films may incorporate and maintain a certain compressive or tensile lattice strain, depending on the used substrate/film combination. This deformation of the crystal lattice is known to strongly influence the ferroelectric properties of perovskites. In the case of NaNbO{sub 3} compressive strain is achieved in films deposited on NdGaO{sub 3} and SrTiO{sub 3} substrates while deposition on DyScO{sub 3} and TbScO{sub 3} leads to tensile in-plane strain. In order to characterize and practically apply the ferroelectric films, it is necessary to embed them in a capacitor structure for which we use pseudomorphically grown SrRuO{sub 3} as bottom electrodes. We report on the deposition of SrRuO{sub 3} and NaNbO{sub 3} single layers on SrTiO{sub 3}, DyScO{sub 3}, TbScO{sub 3} and NbGaO{sub 3} substrates by means of pulsed laser deposition. By adjusting the substrate temperature, the oxygen partial pressure and the laser frequency we have successfully deposited smooth, strained, single phase NaNbO{sub 3} thin films. Investigations of the films by atomic force microscopy and high resolution X-ray diffraction reveal the dependence of the surface morphology and the incorporated lattice strain on the deposition parameters and the lattice mismatch, respectively. All films exhibit piezoelectric properties, as proven by piezoresponse force microscopy.

  13. Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Xiaoxing [Temple University

    2014-01-13

    In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO3 films from SrO and TiO2 targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO2 layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO3 films and its effect on the 2D electron gas at LaAlO3/SrTiO3 interface. We found that there are two layers of different in-plane lattice constants in the LaAlO3 films, one next to the SrTiO3 substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO3/SrTiO3 interface.

  14. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    International Nuclear Information System (INIS)

    Kim, E J; Kim, K A; Yoon, S M

    2016-01-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses. (paper)

  15. Characteristics of 1–3-type ferroelectric ceramic/auxetic polymer composites

    International Nuclear Information System (INIS)

    Topolov, V Yu; Bowen, C R

    2008-01-01

    This paper presents modelling and simulation results on 1–3 piezoactive composites comprising a range of ferroelectric ceramics, which are assumed to have variable properties and an auxetic polymer (i.e. a material with a negative Poisson ratio) that improves the hydrostatic piezoelectric response of the composite. Dependences of the effective piezoelectric coefficients and related parameters of the 1–3 composites on the degree of poling, mobility of the 90° domain walls within ceramic grains, on the volume fraction of the ceramic component and on the Poisson ratio of the polymer component have been calculated and analysed. The role of the piezoelectric anisotropy and domain-orientation processes in improving and optimising the effective parameters, piezoelectric activity and sensitivity of 1–3 ferroelectric ceramic/auxetic composites is discussed

  16. Giant quadratic electro-optical effect during polarization switching in ultrathin ferroelectric polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L. M., E-mail: lev39blinov@gmail.com; Lazarev, V V; Palto, S P; Yudin, S G [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-04-15

    The low-frequency quadratic electro-optical effect with a maximum electro-optical coefficient of g = 8 Multiplication-Sign 10{sup -19} m{sup 2}/V{sup 2} (i.e., four orders of magnitude greater than the standard high-frequency value) has been studied in thin films of ferroelectric polymer PVDF(70%)-TrFE(30%). The observed effect is related to the process of spontaneous polarization switching, during which the electron oscillators of C-F and C-H dipole groups rotate to become parallel to the applied field. As a result, the ellipsoid of the refractive index exhibits narrowing in the direction perpendicular to the field. The field dependence of the electro-optical coefficient g correlates with that of the apparent dielectric permittivity, which can be introduced under the condition of ferroelectric polarization switching. The observed electro-optical effect strongly decreases when the frequency increases up to several hundred hertz. The temperature dependence of the effect exhibits clearly pronounced hysteresis in the region of the ferroelectric phase transition.

  17. Ferroelectric fluoride compositions and methods of making and using same

    Science.gov (United States)

    Halasyamani, P Shiv; Chang, Hong-Young

    2015-04-07

    A method for synthesis of a ferroelectric material characterized by the general formula A.sub.xB.sub.yF.sub.z where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.

  18. The Integration and Applications of Organic Thin Film Transistors and Ferroelectric Polymers

    Science.gov (United States)

    Hsu, Yu-Jen

    Organic thin film transistors and ferroelectric polymer (polyvinylidene difluoride) sheet material are integrated to form various sensors for stress/strain, acoustic wave, and Infrared (heat) sensing applications. Different from silicon-based transistors, organic thin film transistors can be fabricated and processed in room-temperature and integrated with a variety of substrates. On the other hand, polyvinylidene difluoride (PVDF) exhibits ferroelectric properties that are highly useful for sensor applications. The wide frequency bandwidth (0.001 Hz to 10 GHz), vast dynamic range (100n to 10M psi), and high elastic compliance (up to 3 percent) make PVDF a more suitable candidate over ceramic piezoelectric materials for thin and flexible sensor applications. However, the low Curie temperature may have impeded its integration with silicon technology. Organic thin film transistors, however, do not have the limitation of processing temperature, hence can serve as transimpedance amplifiers to convert the charge signal generated by PVDF into current signal that are more measurable and less affected by any downstream parasitics. Piezoelectric sensors are useful for a range of applications, but passive arrays suffer from crosstalk and signal attenuation which have complicated the development of array-based PVDF sensors. We have used organic field effect transistors, which are compatible with the low Curie temperature of a flexible piezoelectric polymer,PVDF, to monolithically fabricate transimpedance amplifiers directly on the sensor surface and convert the piezoelectric charge signal into a current signal which can be detected even in the presence of parasitic capacitances. The device couples the voltage generated by the PVDF film under strain into the gate of the organic thin film transistors (OFET) using an arrangement that allows the full piezoelectric voltage to couple to the channel, while also increasing the charge retention time. A bipolar detector is created by

  19. Surface topography and crystal and domain structures of films of ferroelectric copolymer of vinylidene difluoride and trifluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kochervinskii, V. V., E-mail: kochval@mail.ru [Karpov Institute of Physical Chemistry, Branch (Russian Federation); Kiselev, D. A.; Malinkovich, M. D. [National University of Science and Technology MISiS (Russian Federation); Korlyukov, A. A.; Lokshin, B. V. [Russian Academy of Sciences, Nesmeyanov Institute of Organoelement Compounds (Russian Federation); Volkov, V. V. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation); Kirakosyan, G. A. [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Pavlov, A. S. [Karpov Institute of Physical Chemistry, Branch (Russian Federation)

    2017-03-15

    The crystallization of a copolymer from a solution at room temperature is found to lead to the formation of a metastable structure, characterized by the coexistence of ferroelectric and paraelectric phases. The fraction of the latter decreases after annealing above the Curie point. Atomic force microscopy (AFM) has revealed a difference in the surface topographies between the films contacting with air and the films contacting with a glass substrate. The microstructure of copolymer chains has been investigated by {sup 19}F NMR spectroscopy. The chain fragments with “defect” attached monomeric units are ejected to the surface. The character of the ferroelectric domains formed during crystallization and their size distribution are analyzed.

  20. Characterizing new compositions of [001]C relaxor ferroelectric single crystals using a work-energy model

    Science.gov (United States)

    Gallagher, John A.

    2016-04-01

    The desired operating range of ferroelectric materials with compositions near the morphotropic phase boundary is limited by field induced phase transformations. In [001]C cut and poled relaxor ferroelectric single crystals the mechanically driven ferroelectric rhombohedral to ferroelectric orthorhombic phase transformation is hindered by antagonistic electrical loading. Instability around the phase transformation makes the current experimental technique for characterization of the large field behavior very time consuming. Characterization requires specialized equipment and involves an extensive set of measurements under combined electrical, mechanical, and thermal loads. In this work a mechanism-based model is combined with a more limited set of experiments to obtain the same results. The model utilizes a work-energy criterion that calculates the mechanical work required to induce the transformation and the required electrical work that is removed to reverse the transformation. This is done by defining energy barriers to the transformation. The results of the combined experiment and modeling approach are compared to the fully experimental approach and error is discussed. The model shows excellent predictive capability and is used to substantially reduce the total number of experiments required for characterization. This decreases the time and resources required for characterization of new compositions.

  1. Computational study of textured ferroelectric polycrystals: Dielectric and piezoelectric properties of template-matrix composites

    Science.gov (United States)

    Zhou, Jie E.; Yan, Yongke; Priya, Shashank; Wang, Yu U.

    2017-01-01

    Quantitative relationships between processing, microstructure, and properties in textured ferroelectric polycrystals and the underlying responsible mechanisms are investigated by phase field modeling and computer simulation. This study focuses on three important aspects of textured ferroelectric ceramics: (i) grain microstructure evolution during templated grain growth processing, (ii) crystallographic texture development as a function of volume fraction and seed size of the templates, and (iii) dielectric and piezoelectric properties of the obtained template-matrix composites of textured polycrystals. Findings on the third aspect are presented here, while an accompanying paper of this work reports findings on the first two aspects. In this paper, the competing effects of crystallographic texture and template seed volume fraction on the dielectric and piezoelectric properties of ferroelectric polycrystals are investigated. The phase field model of ferroelectric composites consisting of template seeds embedded in matrix grains is developed to simulate domain evolution, polarization-electric field (P-E), and strain-electric field (ɛ-E) hysteresis loops. The coercive field, remnant polarization, dielectric permittivity, piezoelectric coefficient, and dissipation factor are studied as a function of grain texture and template seed volume fraction. It is found that, while crystallographic texture significantly improves the polycrystal properties towards those of single crystals, a higher volume fraction of template seeds tends to decrease the electromechanical properties, thus canceling the advantage of ferroelectric polycrystals textured by templated grain growth processing. This competing detrimental effect is shown to arise from the composite effect, where the template phase possesses material properties inferior to the matrix phase, causing mechanical clamping and charge accumulation at inter-phase interfaces between matrix and template inclusions. The computational

  2. Dipole pinning effect on photovoltaic characteristics of ferroelectric BiFeO3 films

    Science.gov (United States)

    Biswas, P. P.; Thirmal, Ch.; Pal, S.; Murugavel, P.

    2018-01-01

    Ferroelectric bismuth ferrite is an attractive candidate for switchable devices. The effect of dipole pinning due to the oxygen vacancy layer on the switching behavior of the BiFeO3 thin film fabricated by the chemical solution deposition method was studied after annealing under air, O2, and N2 environment. The air annealed film showed well defined and dense grains leading to a lower leakage current and superior electrical properties compared to the other two films. The photovoltage and transient photocurrent measured under positive and negative poling elucidated the switching nature of the films. Though the air and O2 annealed films showed a switchable photovoltaic response, the response was severely affected by oxygen vacancies in the N2 annealed film. In addition, the open circuit voltage was found to be mostly dependent on the polarization of BiFeO3 rather than the Schottky barriers at the interface. This work provides an important insight into the effect of dipole pinning caused by oxygen vacancies on the switchable photovoltaic effect of BiFeO3 thin films along with the importance of stoichiometric, defect free, and phase pure samples to facilitate meaningful practical applications.

  3. Ferroelectric Phase Diagram of PVDF:PMMA

    OpenAIRE

    Li, Mengyuan; Stingelin, Natalie; Michels, Jasper J.; Spijkman, Mark-Jan; Asadi, Kamal; Feldman, Kirill; Blom, Paul W. M.; de Leeuw, Dago M.

    2012-01-01

    We have investigated the ferroelectric phase diagram of poly(vinylidene fluoride) (PVDF) and poly(methyl methacrylate) (PMMA). The binary nonequilibrium temperature composition diagram was determined and melting of alpha- and beta-phase PVDF was identified. Ferroelectric beta-PVDF:PMMA blend films were made by melting, ice quenching, and subsequent annealing above the glass transition temperature of PMMA, close to the melting temperature of PVDF. Addition of PMMA suppresses the crystallizatio...

  4. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO{sub 2} thin films from solid phase via annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mimura, Takanori; Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Tokyo 102-8554 (Japan); Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8 and Synchrotron X-ray Group, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

    2016-08-01

    0.07YO{sub 1.5}-0.93HfO{sub 2} (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In{sub 2}O{sub 3}(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates, and (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ–2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrate, which does not contain ITO. Polarization–hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (P{sub r}) of 9.6 and 10.8 μC/cm{sup 2} and coercive fields (E{sub c}) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  5. Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

    International Nuclear Information System (INIS)

    Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

    2016-01-01

    The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

  6. Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches

    International Nuclear Information System (INIS)

    Klee, M; Boots, H; Kumar, B; Heesch, C van; Mauczok, R; Keur, W; Wild, M de; Esch, H van; Roest, A L; Reimann, K; Leuken, L van; Wunnicke, O; Zhao, J; Schmitz, G; Mienkina, M; Mleczko, M; Tiggelman, M

    2010-01-01

    Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance devices in small modules. High-K 'Integrated Discretes' devices have been developed, which are based on thin film ferroelectric capacitors integrated together with resistors and ESD protection diodes in a small Si-based chip-scale package. Making use of ferroelectric thin films with relative permittivity of 950-1600 and stacking processes of capacitors, extremely high capacitance densities of 20-520 nF/mm 2 , high breakdown voltages up to 140 V and lifetimes of more than 10 years at operating voltages of 5 V and 85 deg. C are achieved. Thin film high-density capacitors play also an important role as tunable capacitors for applications such as tuneable matching circuits for RF sections of mobile phones. The performance of thin film tuneable capacitors at frequencies between 1 MHz and 1 GHz is investigated. Finally thin film piezoelectric ultrasound transducers, processed in Si- related processes, are attractive for medical imaging, since they enable large bandwidth (>100%), high frequency operation and have the potential to integrate electronics. With these piezoelectric thin film ultrasound transducers real time ultrasound images have been realized. Finally, piezoelectric thin films are used to manufacture galvanic MEMS switches. A model for the quasi-static mechanical behaviour is presented and compared with measurements.

  7. Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

    Directory of Open Access Journals (Sweden)

    Shridhar N. Mathad

    2016-03-01

    Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

  8. Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain.

    Science.gov (United States)

    Suzuki, Norihiro; Osada, Minoru; Billah, Motasim; Bando, Yoshio; Yamauchi, Yusuke; Hossain, Shahriar A

    2018-03-27

    Barium titanate (BaTiO3, hereafter BT) is an established ferroelectric material first discovered in the 1940s and still widely used because of its well-balanced ferroelectricity, piezoelectricity, and dielectric constant. In addition, BT does not contain any toxic elements. Therefore, it is considered to be an eco-friendly material, which has attracted considerable interest as a replacement for lead zirconate titanate (PZT). However, bulk BT loses its ferroelectricity at approximately 130 °C, thus, it cannot be used at high temperatures. Because of the growing demand for high-temperature ferroelectric materials, it is important to enhance the thermal stability of ferroelectricity in BT. In previous studies, strain originating from the lattice mismatch at hetero-interfaces has been used. However, the sample preparation in this approach requires complicated and expensive physical processes, which are undesirable for practical applications. In this study, we propose a chemical synthesis of a porous material as an alternative means of introducing strain. We synthesized a porous BT thin film using a surfactant-assisted sol-gel method, in which self-assembled amphipathic surfactant micelles were used as an organic template. Through a series of studies, we clarified that the introduction of pores had a similar effect on distorting the BT crystal lattice, to that of a hetero-interface, leading to the enhancement and stabilization of ferroelectricity. Owing to its simplicity and cost effectiveness, this fabrication process has considerable advantages over conventional methods.

  9. Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

    Science.gov (United States)

    Nguyen, Minh D.; Dekkers, Matthijn; Houwman, Evert; Steenwelle, Ruud; Wan, Xin; Roelofs, Andreas; Schmitz-Kempen, Thorsten; Rijnders, Guus

    2011-12-01

    A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector.

  10. Chemical segregation and self polarisation in ferroelectrics

    Directory of Open Access Journals (Sweden)

    Bernard E. Watts

    2009-06-01

    Full Text Available Chemical partitioning or segregation is commonly encountered in solid-state syntheses. It is driven by compositional, thermal and electric field gradients. These phenomena can be quite extreme in thin films and lead to notable effects on the electrical properties of ferroelectrics. The segregation in ferroelectric thin films will be illustrated and the mechanisms explained in terms of diffusion processes driven by a potential gradient of the oxygen. The hypothesis can also explain self polarisation and imprint in ferroelectric hysteresis.

  11. Two-dimensional ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L M; Fridkin, Vladimir M; Palto, Sergei P [A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation); Bune, A V; Dowben, P A; Ducharme, Stephen [Department of Physics and Astronomy, Behlen Laboratory of Physics, Center for Materials Research and Analysis, University of Nebraska-Linkoln, Linkoln, NE (United States)

    2000-03-31

    The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of {approx}200 A and the thinnest ferroelectric films were {approx}200 A thick, macroscopic sizes on an atomic scale. Langmuir-Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir-Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric-paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers. (reviews of topical problems)

  12. Subcritical switching dynamics and humidity effects in nanoscale studies of domain growth in ferroelectric thin films

    International Nuclear Information System (INIS)

    Blaser, Cédric; Paruch, Patrycja

    2015-01-01

    Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr 0.2 Ti 0.8 )O 3 thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing time, respectively, are well known, we report an additional linear dependence on relative humidity in the 28–65% range. We map out the switched domain size as a function of both the tip bias and the applied pulse time and describe a growth-limited regime for very short pulses and a nucleation-limited regime for very low tip bias. Using ‘interrupted-switching’ measurements, we probe the nucleation regime with subcritical pulses and identify a surprisingly long relaxation time on the order of 100 ms, which we relate to ionic redistribution both on the surface and within the thin film itself. (paper)

  13. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

    2013-01-01

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up

  14. Improving information density in ferroelectric polymer films by using nanoimprinted gratings

    Science.gov (United States)

    Martínez-Tong, Daniel E.; Soccio, Michela; Rueda, Daniel R.; Nogales, Aurora; García-Gutiérrez, Mari Cruz; Ezquerra, Tiberio A.

    2015-03-01

    The development of polymer non-volatile memories depends on the effective fabrication of devices with high density of information. Well-defined low aspect ratio nanogratings on thin films of poly(vinylidene fluoride-trifluoroethylene) copolymers can be fabricated by using Nanoimprint Lithography (NIL). By using these nanogratings, an improved management of writing and reading information can be reached as revealed by Piezoresponse Force Microscopy (PFM). Structural investigation by means of Grazing Incidence X-ray (GIX) scattering techniques indicates that the physical confinement generated by nanoimprint promotes the development of smaller and edge-on oriented crystals. Our results evidence that one-dimensional nanostructuring can be a straightforward approach to improve the control of the polarization in ferroelectric polymer thin films.

  15. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin; Li, Chen; Qiu, Xiang-biao; Wu, Di; Lu, Yan-qing, E-mail: yqlu@nju.edu.cn [National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Geng, De-qiang [Jinan Jingzheng Electronics Co., Ltd., Jinan 250100 (China)

    2016-07-15

    Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

  16. Comment on 'extrinsic versus intrinsic ferroelectric switching : experimental investigations using ultra-thin PVDF Langmuir-Blodgett films'

    NARCIS (Netherlands)

    Naber, R.C.G.; Blom, P.W.M.; de Leeuw, DM

    2006-01-01

    Previous work on ultra-thin P(VDF-TrFE) Langmuir-Blodgett films has indicated a transition from extrinsic to intrinsic ferroelectric switching. The lack of several key features of intrinsic switching in the experimental work reported by Kliem et al argues against intrinsic switching. In this Comment

  17. Polarization enhancement and ferroelectric switching enabled by interacting magnetic structures in DyMnO3 thin films

    KAUST Repository

    Lu, Chengliang

    2013-12-02

    The mutual controls of ferroelectricity and magnetism are stepping towards practical applications proposed for quite a few promising devices in which multiferroic thin films are involved. Although ferroelectricity stemming from specific spiral spin ordering has been reported in highly distorted bulk perovskite manganites, the existence of magnetically induced ferroelectricity in the corresponding thin films remains an unresolved issue, which unfortunately halts this step. In this work, we report magnetically induced electric polarization and its remarkable response to magnetic field (an enhancement of ?800% upon a field of 2 Tesla at 2 K) in DyMnO3 thin films grown on Nb-SrTiO3 substrates. Accompanying with the large polarization enhancement, the ferroelectric coercivity corresponding to the magnetic chirality switching field is significantly increased. A picture based on coupled multicomponent magnetic structures is proposed to understand these features. Moreover, different magnetic anisotropy related to strain-suppressed GdFeO 3-type distortion and Jahn-Teller effect is identified in the films.

  18. Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Prins, M.W.J.; Wolf, R.M.

    1997-01-01

    Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for

  19. Aggregate linear properties of ferroelectric ceramics and polycrystalline thin films: Calculation by the method of effective piezoelectric medium

    Science.gov (United States)

    Pertsev, N. A.; Zembilgotov, A. G.; Waser, R.

    1998-08-01

    The effective dielectric, piezoelectric, and elastic constants of polycrystalline ferroelectric materials are calculated from single-crystal data by an advanced method of effective medium, which takes into account the piezoelectric interactions between grains in full measure. For bulk BaTiO3 and PbTiO3 polarized ceramics, the dependences of material constants on the remanent polarization are reported. Dielectric and elastic constants are computed also for unpolarized c- and a-textured ferroelectric thin films deposited on cubic or amorphous substrates. It is found that the dielectric properties of BaTiO3 and PbTiO3 polycrystalline thin films strongly depend on the type of crystal texture. The influence of two-dimensional clamping by the substrate on the dielectric and piezoelectric responses of polarized films is described quantitatively and shown to be especially important for the piezoelectric charge coefficient of BaTiO3 films.

  20. Growth and properties of SrBi2TaNbO9 ferroelectric thin films using pulsed laser deposition

    International Nuclear Information System (INIS)

    Yang Pingxiong; Deng Hongmei; Shi Meirong; Tong Ziyang; Qin Sumei

    2007-01-01

    High quality SrBi 2 TaNbO 9 (SBTN) ferroelectric thin films were fabricated on platinized silicon by pulsed laser deposition. Microstructure and ferroelectric properties of the films were characterized. Optical fatigue (light/bias) for the thin films was studied and the average remanent polarization dropped by nearly 55% due to the bias/illumination treatment. Optical properties of the thin films were studied by spectroscopic ellipsometry (SE) from the ultraviolet to the infrared region. Optical constants, n ∼ 0.16 in the infrared region and n ∼ 2.12 in the visible spectral region, were determined through refractive index functions. The band gap energy is estimated to be 3.93 eV

  1. Sensitivity Enhancement in Magnetic Sensors Based on Ferroelectric-Bimorphs and Multiferroic Composites

    Directory of Open Access Journals (Sweden)

    Gollapudi Sreenivasulu

    2016-02-01

    Full Text Available Multiferroic composites with ferromagnetic and ferroelectric phases have been studied in recent years for use as sensors of AC and DC magnetic fields. Their operation is based on magneto-electric (ME coupling between the electric and magnetic subsystems and is mediated by mechanical strain. Such sensors for AC magnetic fields require a bias magnetic field to achieve pT-sensitivity. Novel magnetic sensors with a permanent magnet proof mass, either on a ferroelectric bimorph or a ferromagnetic-ferroelectric composite, are discussed. In both types, the interaction between the applied AC magnetic field and remnant magnetization of the magnet results in a mechanical strain and a voltage response in the ferroelectric. Our studies have been performed on sensors with a Nd-Fe-B permanent magnet proof mass on (i a bimorph of oppositely-poled lead zirconate titanate (PZT platelets and (ii a layered multiferroic composite of PZT-Metglas-Ni. The sensors have been characterized in terms of sensitivity and equivalent magnetic noise N. Noise N in both type of sensors is on the order of 200 pT/√Hz at 1 Hz, a factor of 10 improvement compared to multiferroic sensors without a proof mass. When the AC magnetic field is applied at the bending resonance for the bimorph, the measured N ≈ 700 pT/√Hz. We discuss models based on magneto-electro-mechanical coupling at low frequency and bending resonance in the sensors and theoretical estimates of ME voltage coefficients are in very good agreement with the data.

  2. Sensitivity Enhancement in Magnetic Sensors Based on Ferroelectric-Bimorphs and Multiferroic Composites.

    Science.gov (United States)

    Sreenivasulu, Gollapudi; Qu, Peng; Petrov, Vladimir; Qu, Hongwei; Srinivasan, Gopalan

    2016-02-20

    Multiferroic composites with ferromagnetic and ferroelectric phases have been studied in recent years for use as sensors of AC and DC magnetic fields. Their operation is based on magneto-electric (ME) coupling between the electric and magnetic subsystems and is mediated by mechanical strain. Such sensors for AC magnetic fields require a bias magnetic field to achieve pT-sensitivity. Novel magnetic sensors with a permanent magnet proof mass, either on a ferroelectric bimorph or a ferromagnetic-ferroelectric composite, are discussed. In both types, the interaction between the applied AC magnetic field and remnant magnetization of the magnet results in a mechanical strain and a voltage response in the ferroelectric. Our studies have been performed on sensors with a Nd-Fe-B permanent magnet proof mass on (i) a bimorph of oppositely-poled lead zirconate titanate (PZT) platelets and (ii) a layered multiferroic composite of PZT-Metglas-Ni. The sensors have been characterized in terms of sensitivity and equivalent magnetic noise N. Noise N in both type of sensors is on the order of 200 pT/√Hz at 1 Hz, a factor of 10 improvement compared to multiferroic sensors without a proof mass. When the AC magnetic field is applied at the bending resonance for the bimorph, the measured N ≈ 700 pT/√Hz. We discuss models based on magneto-electro-mechanical coupling at low frequency and bending resonance in the sensors and theoretical estimates of ME voltage coefficients are in very good agreement with the data.

  3. Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films.

    Science.gov (United States)

    Kim, Tae Heon; Yoon, Jong-Gul; Baek, Seung Hyub; Park, Woong-kyu; Yang, Sang Mo; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Noh, Tae Won

    2015-07-01

    Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

  4. Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films

    Science.gov (United States)

    Heon Kim, Tae; Yoon, Jong-Gul; Hyub Baek, Seung; Park, Woong-Kyu; Mo Yang, Sang; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Won Noh, Tae

    2015-07-01

    Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

  5. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

    Science.gov (United States)

    Ali, Faizan; Liu, Xiaohua; Zhou, Dayu; Yang, Xirui; Xu, Jin; Schenk, Tony; Müller, Johannes; Schroeder, Uwe; Cao, Fei; Dong, Xianlin

    2017-10-01

    Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3 is achieved at 4.5 MV/cm with a high efficiency of ˜65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109 times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3 in fabrication of nano-structural supercapacitors.

  6. Enhanced magnetoelectric coupling in a composite multiferroic system via interposing a thin film polymer

    Science.gov (United States)

    Xiao, Zhuyun; Mohanchandra, Kotekar P.; Lo Conte, Roberto; Ty Karaba, C.; Schneider, J. D.; Chavez, Andres; Tiwari, Sidhant; Sohn, Hyunmin; Nowakowski, Mark E.; Scholl, Andreas; Tolbert, Sarah H.; Bokor, Jeffrey; Carman, Gregory P.; Candler, Rob N.

    2018-05-01

    Enhancing the magnetoelectric coupling in a strain-mediated multiferroic composite structure plays a vital role in controlling magnetism by electric fields. An enhancement of magnetoelastic coupling between ferroelectric single crystal (011)-cut [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT, x≈ 0.30) and ferromagnetic polycrystalline Ni thin film through an interposed benzocyclobutene polymer thin film is reported. A nearly twofold increase in sensitivity of remanent magnetization in the Ni thin film to an applied electric field is observed. This observation suggests a viable method of improving the magnetoelectric response in these composite multiferroic systems.

  7. Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene Ultrathin Films

    Directory of Open Access Journals (Sweden)

    Long Li

    2017-12-01

    Full Text Available The characteristics of ferroelectric capacitors with poly(vinylidene fluoride-trifluoroethlene (P(VDF-TrFE films have been studied at different structures of cell electrodes. It is suggested that the effect of electrode structures could induce changes of performance. Remarkably, cells with line electrodes display a better polarization and fatigue resistance than those with flat electrodes. For P(VDF-TrFE ultrathin films with different electrode structures, the models of charge compensation mechanism for depolarization field and domain fatigue decomposition are used to explain the effect of electrode structure. Furthermore, the driving voltage based on normal speed-functionality is designed, and the testing results show that the line electrode structure could induce a robust switching, which is determined by the free charges concentration in active layer. These findings provide an effective route to design the optimum structure for a ferroelectric capacitor based on P(VDF-TrFE copolymer ultrathin film.

  8. A Reconfigurable Coplanar Waveguide Bowtie Antenna Using an Integrated Ferroelectric Thin-Film Varactor

    Directory of Open Access Journals (Sweden)

    K. C. Pan

    2012-01-01

    Full Text Available A novel printed antenna with a frequency reconfigurable feed network is presented. The antenna consists of a bowtie structure patch radiating element in the inner space of an annulus that is on a nongrounded substrate with a ferroelectric (FE Barium Strontium Titanate (BST thin film. The bowtie patch is fed by a coplanar waveguide (CPW transmission line that also includes a CPW-based BST shunt varactor. Reconfiguration of the compact 8 mm × 8 mm system has been demonstrated by shifting the antenna system’s operating frequency 500 MHz in the 7–9 GHz band by applying a DC voltage bias.

  9. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

    2012-01-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

  10. Surface potential-governed cellular osteogenic differentiation on ferroelectric polyvinylidene fluoride trifluoroethylene films.

    Science.gov (United States)

    Tang, Bolin; Zhang, Bo; Zhuang, Junjun; Wang, Qi; Dong, Lingqing; Cheng, Kui; Weng, Wenjian

    2018-05-02

    Surface potential of biomaterials can dramatically influence cellular osteogenic differentiation. In this work, a wide range of surface potential on ferroelectric polyvinylidene fluoride trifluoroethylene (P(VDF-TrFE)) films was designed to get insight into the interfacial interaction of cell-charged surface. The P(VDF-TrFE) films poled by contact electric poling at various electric fields obtained well stabilized surface potential, with wide range from -3 to 915 mV. The osteogenic differentiation level of cells cultured on the films was strongly dependent on surface potential and reached the optimum at 391 mV in this system. Binding specificity assay indicated that surface potential could effectively govern the binding state of the adsorbed fibronectin (FN) with integrin. Molecular dynamic (MD) simulation further revealed that surface potential brought a significant difference in the relative distance between RGD and synergy PHSRN sites of adsorbed FN, resulting in a distinct integrin-FN binding state. These results suggest that the full binding of integrin α5β1 with both RGD and PHSRN sites of FN possesses a strong ability to activate osteogenic signaling pathway. This work sheds light on the underlying mechanism of osteogenic differentiation behavior on charged material surfaces, and also provides a guidance for designing a reasonable charged surface to enhance osteogenic differentiation. The ferroelectric P(VDF-TrFE) films with steady and a wide range of surface potential were designed to understand underlying mechanism of cell-charged surface interaction. The results showed that the charged surface well favored upregulation of osteogenic differentiation of MC3T3-E1 cells, and more importantly, a highest level occurred on the film with a moderate surface potential. Experiments and molecular dynamics simulation demonstrated that the surface potential could govern fibronectin conformation and then the integrin-fibronectin binding. We propose that a full binding

  11. Synthesis and dielectric properties of ferroelectric-ferrimagnetic PZT-SFMO composites

    Directory of Open Access Journals (Sweden)

    Alexander V. Petrov

    2017-03-01

    Full Text Available Ferrimagnetic-ferroelectric composite materials on the base of Pb0.85Zr0.53Ti0.47O3– Sr2FeMoO6–δ (PZT-SFMO compounds have been prepared by a complex ceramic technology and a modified sol-gel synthesis. The dielectric properties of the PZT-SFMO composites with the PZT concentrations of 55 wt% and less, as well as of pure SFMO, are caused by the Maxwell-Wagner relaxation and a huge electrical conductivity. In contrast, in pure PZT the ferroelectric phase transition is clearly expressed in the static dielectric permittivity anomaly. Moreover, in all investigated composites, similarly to pure SFMO, the electrical conductivity anomaly is observed in the range from 560–540 K. This indicates that the composites with PZT concentrations of 55 wt% and higher are above the electrical and magnetic percolation threshold, in a good agreement with the excluded volume theory. In PZT-SFMO composites the DC electrical conductivity increases with SFMO concentration almost in a power law fashion, while the activation energy of the DC conductivity decreases under certain conditions.

  12. Enhanced Switchable Ferroelectric Photovoltaic Effects in Hexagonal Ferrite Thin Films via Strain Engineering.

    Science.gov (United States)

    Han, Hyeon; Kim, Donghoon; Chu, Kanghyun; Park, Jucheol; Nam, Sang Yeol; Heo, Seungyang; Yang, Chan-Ho; Jang, Hyun Myung

    2018-01-17

    Ferroelectric photovoltaics (FPVs) are being extensively investigated by virtue of switchable photovoltaic responses and anomalously high photovoltages of ∼10 4 V. However, FPVs suffer from extremely low photocurrents due to their wide band gaps (E g ). Here, we present a promising FPV based on hexagonal YbFeO 3 (h-YbFO) thin-film heterostructure by exploiting its narrow E g . More importantly, we demonstrate enhanced FPV effects by suitably exploiting the substrate-induced film strain in these h-YbFO-based photovoltaics. A compressive-strained h-YbFO/Pt/MgO heterojunction device shows ∼3 times enhanced photovoltaic efficiency than that of a tensile-strained h-YbFO/Pt/Al 2 O 3 device. We have shown that the enhanced photovoltaic efficiency mainly stems from the enhanced photon absorption over a wide range of the photon energy, coupled with the enhanced polarization under a compressive strain. Density functional theory studies indicate that the compressive strain reduces E g substantially and enhances the strength of d-d transitions. This study will set a new standard for determining substrates toward thin-film photovoltaics and optoelectronic devices.

  13. Miniaturized and reconfigurable notch antenna based on a BST ferroelectric thin film

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Hung Viet [Institut d' Electronique et de Télécommunications de Rennes (IETR), IUT Saint-Brieuc, Université de Rennes 1, 22004 Saint-Brieuc (France); CEA-LETI, Minatec, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Benzerga, Ratiba, E-mail: ratiba.benzerga@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR), IUT Saint-Brieuc, Université de Rennes 1, 22004 Saint-Brieuc (France); Borderon, Caroline [IETR, Université de Nantes, 2 rue de la Houssinière, 44322 Nantes (France); Delaveaud, Christophe [CEA-LETI, Minatec, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Sharaiha, Ala [Institut d' Electronique et de Télécommunications de Rennes (IETR), IUT Saint-Brieuc, Université de Rennes 1, 22004 Saint-Brieuc (France); Renoud, Raphael [IETR, Université de Nantes, 2 rue de la Houssinière, 44322 Nantes (France); Paven, Claire Le [Institut d' Electronique et de Télécommunications de Rennes (IETR), IUT Saint-Brieuc, Université de Rennes 1, 22004 Saint-Brieuc (France); Pavy, Sabrina; Nadaud, Kevin; Gundel, Hartmut W. [IETR, Université de Nantes, 2 rue de la Houssinière, 44322 Nantes (France)

    2015-07-15

    Highlights: • A miniature and agile antenna based on a BST MIM capacitor is simulated and made. • Mn{sup 2+} doped BST thin films are synthesized by chemical deposition and spin coating. • Permittivity and losses of the BST thin film are respectively 225 and 0.02 at 1 GHz. • A miniaturization rate of 70% is obtained with a MIM capacitance of 3.7 pF. • A frequency tunability of 14.5% and a tunability performance of 0.04 are measured. - Abstract: This work deals with the design, realization and characterization of a miniature and frequency agile antenna based on a ferroelectric Ba{sub 0,80}Sr{sub 0,20}TiO{sub 3} thin film. The notch antenna is loaded with a variable metal/insulator/metal (MIM) capacitor and is achieved by a monolithic method. The MIM capacitance is 3.7 pF, which results in a resonant frequency of 670 MHz compared to 2.25 GHz for the unloaded simulated antenna; the resulting miniaturization rate is 70%. The characterization of the antenna prototype shows a frequency tunable rate of 14.5% under an electric field of 375 kV/cm, with a tunability performance η = 0.04.

  14. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    Science.gov (United States)

    Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

    2012-06-01

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

  15. Boosting the Recoverable Energy Density of Lead-Free Ferroelectric Ceramic Thick Films through Artificially Induced Quasi-Relaxor Behavior.

    Science.gov (United States)

    Peddigari, Mahesh; Palneedi, Haribabu; Hwang, Geon-Tae; Lim, Kyung Won; Kim, Ga-Yeon; Jeong, Dae-Yong; Ryu, Jungho

    2018-06-08

    Dielectric ceramic film capacitors, which store energy in the form of electric polarization, are promising for miniature pulsed power electronic device applications. For a superior energy storage performance of the capacitors, large recoverable energy density, along with high efficiency, high power density, fast charge/discharge rate, and good thermal/fatigue stability, is desired. Herein, we present highly dense lead-free 0.942[Na 0.535 K 0.480 NbO 3 ]-0.058LiNbO 3 (KNNLN) ferroelectric ceramic thick films (∼5 μm) demonstrating remarkable energy storage performance. The nanocrystalline KNNLN thick film fabricated by aerosol deposition (AD) process and annealed at 600 °C displayed a quasi-relaxor ferroelectric behavior, which is in contrast to the typical ferroelectric nature of the KNNLN ceramic in its bulk form. The AD film exhibited a large recoverable energy density of 23.4 J/cm 3 , with an efficiency of over 70% under the electric field of 1400 kV/cm. Besides, an ultrahigh power density of 38.8 MW/cm 3 together with a fast discharge speed of 0.45 μs, good fatigue endurance (up to 10 6 cycles), and thermal stability in a wide temperature range of 20-160 °C was also observed. Using the AD process, we could make a highly dense microstructure of the film containing nano-sized grains, which gave rise to the quasi-relaxor ferroelectric characteristics and the remarkable energy storage properties.

  16. Thickness-dependent a_1/a_2 domain evolution in ferroelectric PbTiO_3 films

    International Nuclear Information System (INIS)

    Li, S.; Zhu, Y.L.; Tang, Y.L.; Liu, Y.; Zhang, S.R.; Wang, Y.J.; Ma, X.L.

    2017-01-01

    Ferroelectric a_1/a_2 domain structure has great potentials in high dielectric capacitors and tunable microwave devices. Understanding its structure is crucial to better control the domain configurations for future applications. In this paper, PbTiO_3 thin films with variant thicknesses are deposited on (110)-oriented GdScO_3 substrates by Pulsed Laser Deposition (PLD) and investigated by using conventional transmission electron microscopy (TEM) and Cs-corrected Scanning TEM. Contrast analysis and electron diffractions reveal that PbTiO_3 films are domain oriented consisting of a_1/a_2 and a/c domain structure. The a_1/a_2 domains are found to distribute periodically and its width increases with increasing film thickness following square root rule. Cs-corrected STEM imaging demonstrates that the domain walls of a_1/a_2 domain structure have the rotation characteristic of 90° ferroelastic domain wall. The interchange of a_1/a_2 domains induces the formation of vertex domains composed of two 90° and one 180° domain walls. Strains are mainly concentrated on the domain walls. The formation of this complex domain configuration is discussed in terms of the effect of the misfit strain, film thickness and cooling rate. These results provide novel information about a_1/a_2 domain structures and are expected to shed some light on modulating a_1/a_2 ferroelectric domain patterns in the design of ferroelectric-based devices.

  17. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, ChangLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Wang, XueJun [Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Zhang, XiuLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, XiaoLi [School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, HaiSheng, E-mail: hsxu@ecust.edu.cn [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300 (China)

    2016-05-15

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  18. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    International Nuclear Information System (INIS)

    Liu, ChangLi; Wang, XueJun; Zhang, XiuLi; Du, XiaoLi; Xu, HaiSheng

    2016-01-01

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  19. Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

    Science.gov (United States)

    Bi, Han; Sun, Qingqing; Zhao, Xuebing; You, Wenbin; Zhang, David Wei; Che, Renchao

    2018-04-01

    Recently, non-volatile semiconductor memory devices using a ferroelectric Hf0.5Zr0.5O2 film have been attracting extensive attention. However, at the nano-scale, the phase structure remains unclear in a thin Hf0.5Zr0.5O2 film, which stands in the way of the sustained development of ferroelectric memory nano-devices. Here, a series of electron microscopy evidences have illustrated that the interfacial strain played a key role in inducing the orthorhombic phase and the distorted tetragonal phase, which was the origin of the ferroelectricity in the Hf0.5Zr0.5O2 film. Our results provide insight into understanding the association between ferroelectric performances and microstructures of Hf0.5Zr0.5O2-based systems.

  20. Dielectric behaviour of the composite system: multiwall carbon nanotubes dispersed in ferroelectric liquid crystalline material

    Czech Academy of Sciences Publication Activity Database

    Shukla, R.K.; Raina, K.K.; Hamplová, Věra; Kašpar, Miroslav; Bubnov, Alexej

    2011-01-01

    Roč. 84, 9-10 (2011), 850-857 ISSN 0141-1594 R&D Projects: GA AV ČR IAA100100911; GA AV ČR(CZ) GA202/09/0047; GA ČR(CZ) GAP204/11/0723 Grant - others:RFASI(RU) 02.740.11.5166 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferroelectric liquid crystal * multiwall carbon nanotube * composite * mesomorphic property * dielectric spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.006, year: 2011

  1. Raman analysis of ferroelectric switching in niobium-doped lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Ferrari, P.; Ramos-Moore, E.; Guitar, M.A.; Cabrera, A.L.

    2014-01-01

    Characteristic Raman vibration modes of niobium-doped lead zirconate titanate (PNZT) are studied as a function of ferroelectric domain switching. The microstructure of PNZT is characterized by scanning electron microscopy and X-ray diffraction. Ferroelectric switching is achieved by applying voltages between the top (Au) and bottom (Pt) electrodes, while acquiring the Raman spectra in situ. Vibrational active modes associated with paraelectric and ferroelectric phases are identified after measuring above and below the ferroelectric Curie temperature, respectively. Changes in the relative intensities of the Raman peaks are observed as a function of the switching voltage. The peak area associated with the ferroelectric modes is analyzed as a function of the applied voltage within one ferroelectric polarization loop, showing local maxima around the coercive voltage. This behavior can be understood in terms of the correlation between vibrational and structural properties, since ferroelectric switching modifies the interaction between the body-centered atom (Zr, Ti or Nb) and the Pb–O lattice. - Highlights: • Electric fields induce structural distortions on ferroelectric perovskites. • Ferroelectric capacitor was fabricated to perform hysteresis loops. • Raman analysis was performed in situ during ferroelectric switching. • Raman modes show hysteresis and inflections around the coercive voltages. • Data can be understood in terms of vibrational–structural correlations

  2. Magnetoelastic coupling in multilayered ferroelectric/ferromagnetic thin films: A quantitative evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Chiolerio, A., E-mail: alessandro.chiolerio@iit.it [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy); Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Quaglio, M. [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Lamberti, A. [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy); Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Celegato, F. [Electromagnetism Division, INRIM, Strada delle Cacce 91, IT-10135 Turin (Italy); Balma, D.; Allia, P. [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy)

    2012-08-01

    The electrical control of magnetization in a thin film, achieved by means of magnetoelastic coupling between a ferroelectric and a ferromagnetic layer represents an attractive way to implement magnetic information storage and processing within logical architectures known as Magnetic Quantum Cellular Automata (MQCA). Such systems have been addressed as multiferroics. We exploited cost-effective techniques to realize multi-layered multiferroic systems, such as sol-gel deposition and RF sputtering, introducing a specific technique to control the crystal structure and film roughness effect on the magnetic domain wall motion and reconfiguration, induced by magnetoelastic coupling, by evaluating the 2-dimensional statistical properties of enhanced MFM matrices. A RF sputtered 50-nm-thick Co layer on a Si/SiO{sub 2}/Si{sub 3}N{sub 4}/Ti/Pt/PbTiO{sub 3}/Pb(Zr{sub 0.53}Ti{sub 0.47})O{sub 3} substrate was realized, exploiting two differently engineered PZT nano-crystalline structures and the conditions leading to a favorable compromise in order to realize functional devices were elucidated.

  3. A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

    Directory of Open Access Journals (Sweden)

    S. Riedel

    2016-09-01

    Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

  4. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    Science.gov (United States)

    Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

    2017-07-01

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

  5. The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

    Science.gov (United States)

    Ahn, C. W.; Y Lee, S.; Lee, H. J.; Ullah, A.; Bae, J. S.; Jeong, E. D.; Choi, J. S.; Park, B. H.; Kim, I. W.

    2009-11-01

    We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

  6. The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

    International Nuclear Information System (INIS)

    Ahn, C W; Bae, J S; Jeong, E D; Lee, S Y; Lee, H J; Ullah, A; Kim, I W; Choi, J S; Park, B H

    2009-01-01

    We have fabricated K 0.5 Na 0.5 NbO 3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V -1 , which is comparable to that of polycrystalline PZT thin films.

  7. Origin of thermally stable ferroelectricity in a porous barium titanate thin film synthesized through block copolymer templating

    Directory of Open Access Journals (Sweden)

    Norihiro Suzuki

    2017-07-01

    Full Text Available A porous barium titanate (BaTiO3 thin film was chemically synthesized using a surfactant-assisted sol-gel method in which micelles of amphipathic diblock copolymers served as structure-directing agents. In the Raman spectrum of the porous BaTiO3 thin film, a peak corresponding to the ferroelectric tetragonal phase was observed at around 710 cm−1, and it remained stable at much higher temperature than the Curie temperature of bulk single-crystal BaTiO3 (∼130 °C. Measurements revealed that the ferroelectricity of the BaTiO3 thin film has high thermal stability. By analyzing high-resolution transmission electron microscope images of the BaTiO3 thin film by the fast Fourier transform mapping method, the spatial distribution of stress in the BaTiO3 framework was clearly visualized. Careful analysis also indicated that the porosity in the BaTiO3 thin film introduced anisotropic compressive stress, which deformed the crystals. The resulting elongated unit cell caused further displacement of the Ti4+ cation from the center of the lattice. This displacement increased the electric dipole moment of the BaTiO3 thin film, effectively enhancing its ferro(piezoelectricity.

  8. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO{sub 2}-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science (NIMS), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2016-04-07

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO{sub 1.5}-0.93HfO{sub 2} films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal–orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO{sub 2}-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O{sub 3} and BiFeO{sub 3}.

  9. Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

    KAUST Repository

    Hu, Weijin

    2014-11-12

    We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

  10. Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2009-05-01

    We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

  11. Ferroelectrics onto silicon prepared by chemical solution deposition methods: from the thin film to the self-assembled systems

    Directory of Open Access Journals (Sweden)

    Calzada, M. L.

    2006-06-01

    Full Text Available The work of the authors during the last years on ferroelectric thin and ultra-thin films deposited by Chemical Solution Deposition (CSD onto silicon based substrates is reviewed in this paper. Ferroelectric layers integrated with silicon substrates have potential use in the new micro/nanoelectronic devices. Two hot issues are here considered: 1 the use of low processing temperatures of the ferroelectric film, with the objective of not producing any damage on the different elements of the device heterostructure, and 2 the downscaling of the ferroelectric material with the aim of achieving the high densities of integration required in the next generation of nanoelectronic devices. The UV-assisted Rapid Thermal Processing has successfully been used in our laboratory for the fabrication of ferroelectric films at low temperatures. Preliminary results on the CSD preparation of nanosized ferroelectric structures are shown.

    Este artículo revisa el trabajo realizado por los autores durante los últimos años sobre lámina delgada y ultra-delgada ferroeléctrica preparada mediante el depósito químico de disoluciones (CSD sobre substratos de silicio. Las películas ferroeléctricas integradas con silicio tienen potenciales usos en los nuevos dispositivos micro/nanoelectrónicos. Dos aspectos claves son aquí considerados: 1 el uso de bajas temperaturas de procesado de la lámina ferroeléctrica, con el fin de no dañar los diferentes elementos que forman la heteroestructura del dispositivo y 2 la disminución de tamaño del material ferroeléctrico con el fin de conseguir las altas densidades de integración requeridas en la próxima generación de dispositivos nanoelectróncos. Los procesos térmicos rápidos asistidos con irradiación UV se están usando en nuestro laboratorio para conseguir la fabricación del material ferroeléctrico a temperaturas bajas compatibles con la tecnología del silicio. Se muestran resultados preliminares sobre

  12. Comment on 'Extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultra-thin PVDF Langmuir-Blodgett films'

    International Nuclear Information System (INIS)

    Naber, R C G; Blom, P W M; Leeuw, D M de

    2006-01-01

    Previous work on ultra-thin P(VDF-TrFE) Langmuir-Blodgett films has indicated a transition from extrinsic to intrinsic ferroelectric switching. The lack of several key features of intrinsic switching in the experimental work reported by Kliem et al argues against intrinsic switching. In this Comment we discuss two published papers and new experimental results that support a lack of intrinsic switching and point to the conclusion that the thickness dependence of the Langmuir-Blodgett films is due to the influence of the electrode interfaces. (comment)

  13. The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

    International Nuclear Information System (INIS)

    Souza, E.C.F.; Simoes, A.Z.; Cilense, M.; Longo, E.; Varela, J.A.

    2004-01-01

    Pure and Nb doped PbZr 0.4 Ti 0.6 O 3 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO 2 /Si (100) substrates and annealed at 700 deg. C. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr 0.39 Ti 0.6 Nb 0.1 O 3 showed good saturation, with values for coercive field (E c ) equal to 60 KV cm -1 and for remanent polarization (P r ) equal to 20 μC cm -2 . The measured dielectric constant (ε) is 1084 for this film. These results show good potential for application in FERAM

  14. Tunability of resonance frequencies in a superconducting microwave resonator by using SrTiO sub 3 ferroelectric films

    CERN Document Server

    Sok, J; Lee, E H

    1998-01-01

    An applied dc voltage varies the dielectric constant of ferroelectric SrTiO sub 3 films. A tuning mechanism for superconducting microwave resonators was realized by using the variation in the dielectric constant of SrTiO sub 3 films. In order to estimate the values of the capacitance, C, and the loss tangent, tan delta, of SrTiO sub 3 ferroelectric capacitors, we used high-temperature superconducting microwave resonators which were composed of two ports, two poles, and dc bias circuits at the zero-field points. SrTiO sub 3 ferroelectric capacitors successfully controlled the resonant frequency of the resonator. Resonant frequencies of 3.98 GHz and 4.20 GHz were measured at bias voltages of 0 V and 50 V which correspond to capacitance values of 0.94 pF and 0.7pF, respectively. The values of the loss tangent, tan delta sub e sub f sub f , obtained in this measurements, were about 0.01.

  15. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    International Nuclear Information System (INIS)

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-01-01

    Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

  16. Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures

    Energy Technology Data Exchange (ETDEWEB)

    Brewer, Steven J.; Bassiri-Gharb, Nazanin [G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Deng, Carmen Z.; Callaway, Connor P. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Paul, McKinley K. [G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Woodward Academy, College Park, Georgia 30337 (United States); Fisher, Kenzie J. [G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Riverwood International Charter School, Atlanta, Georgia 30328 (United States); Guerrier, Jonathon E.; Jones, Jacob L. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Rudy, Ryan Q.; Polcawich, Ronald G. [Army Research Laboratory, Adelphi, Maryland 20783 (United States); Glaser, Evan R.; Cress, Cory D. [Naval Research Laboratory, Washington, DC 20375 (United States)

    2016-07-14

    The effects of gamma irradiation on the dielectric and piezoelectric responses of Pb[Zr{sub 0.52}Ti{sub 0.48}]O{sub 3} (PZT) thin film stacks were investigated for structures with conductive oxide (IrO{sub 2}) and metallic (Pt) top electrodes. The samples showed, generally, degradation of various key dielectric, ferroelectric, and electromechanical responses when exposed to 2.5 Mrad (Si) {sup 60}Co gamma radiation. However, the low-field, relative dielectric permittivity, ε{sub r}, remained largely unaffected by irradiation in samples with both types of electrodes. Samples with Pt top electrodes showed substantial degradation of the remanent polarization and overall piezoelectric response, as well as pinching of the polarization hysteresis curves and creation of multiple peaks in the permittivity-electric field curves post irradiation. The samples with oxide electrodes, however, were largely impervious to the same radiation dose, with less than 5% change in any of the functional characteristics. The results suggest a radiation-induced change in the defect population or defect energy in PZT with metallic top electrodes, which substantially affects motion of internal interfaces such as domain walls. Additionally, the differences observed for stacks with different electrode materials implicate the ferroelectric–electrode interface as either the predominant source of radiation-induced effects (Pt electrodes) or the site of healing for radiation-induced defects (IrO{sub 2} electrodes).

  17. The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)TiO3 thin films

    Science.gov (United States)

    Khan, Asif Islam; Yu, Pu; Trassin, Morgan; Lee, Michelle J.; You, Long; Salahuddin, Sayeef

    2014-07-01

    We study the effects of strain relaxation on the dielectric properties of epitaxial 40 nm Pb(Zr0.2Ti0.8)TiO3 (PZT) films. A significant increase in the defect and dislocation density due to strain relaxation is observed in PZT films with tetragonality c/a fatigue in ferroelectric materials.

  18. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  19. Enhanced ferroelectric photoelectrochemical properties of polycrystalline BiFeO{sub 3} film by decorating with Ag nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qing; Shen, Mingrong; Fang, Liang, E-mail: lfang@suda.edu.cn [College of Physics, Optoelectronics and Energy and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 (China); Zhou, Yang; You, Lu; Wang, Junling [School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore 639798 (Singapore)

    2016-01-11

    Polycrystalline BiFeO{sub 3} (BFO) films are fabricated on Pt/Ti/SiO{sub 2}/Si(100) substrate as photoelectrode using sol-gel method. The microstructure, optical, and photoelectrochemical (PEC) properties of the films are characterized and optimized by controlling the film thickness. Moreover, the PEC properties of the BFO films are dependent on ferroelectric polarization, which is mainly ascribed to the modulation of band structure at the BFO/electrolyte interface by the polarization. Further enhancement of PEC properties is obtained by decorating the samples with appropriate amounts of Ag nanoparticles, which is attributed to the reduced electron-hole recombination, and localized surface plasmon resonance effect of Ag nanoparticles.

  20. Influence of plasma pressure on the growth characteristics and ferroelectric properties of sputter-deposited PZT thin films

    International Nuclear Information System (INIS)

    Bose, A.; Maity, T.; Bysakh, S.; Seal, A.; Sen, Suchitra

    2010-01-01

    PZT thin films of thickness (320-1040) nm were synthesized on Si/SiO 2 /Ti/Pt multilayered substrates by radio frequency magnetron sputtering. The influence of plasma pressure in the range of (0.24-4.9) Pa, during deposition, on the structural, electrical and ferroelectric properties of the PZT films was systematically studied. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and cross-sectional transmission electron microscopy (XTEM) were employed for structural study. Nano-probe Energy Dispersive (EDX) line scanning was employed to investigate the elemental distribution across the film-bottom electrode interface. I-V characteristics and polarization-electric field (P-E) hysteresis loop of the films were measured. The study reveals that the plasma pressure has a strong influence on the evolution and texture of the ferroelectric perovskite phase and microstructure of the films. At an optimum plasma pressure of 4.1 Pa, PZT films are grown with 93% perovskite phase with (1 1 1) preferred orientation and uniform granular microstructure. These films show a saturation polarization of 67 μC/cm 2 , remnant polarization of 30 μC/cm 2 and coercive field of 28 kV/cm which, according to the literature, seem to be suitable for device applications. Transmission electron microscopy (TEM) study shows that at a plasma pressure of 4.1 Pa, the PZT/bottom Pt interface is sharp and no amorphous interlayer is formed at the interface. At a higher plasma pressure of 4.9 Pa, poor I-V and P-E hysteresis loop are observed which are interpreted as due to an amorphous interlayer at the film-bottom electrode interface which is possibly enriched in Pb, Zr, O and Pt.

  1. Nonlinear modeling of ferroelectric-ferromagnetic composites based on condensed and finite element approaches (Presentation Video)

    Science.gov (United States)

    Ricoeur, Andreas; Lange, Stephan; Avakian, Artjom

    2015-04-01

    Magnetoelectric (ME) coupling is an inherent property of only a few crystals exhibiting very low coupling coefficients at low temperatures. On the other hand, these materials are desirable due to many promising applications, e.g. as efficient data storage devices or medical or geophysical sensors. Efficient coupling of magnetic and electric fields in materials can only be achieved in composite structures. Here, ferromagnetic (FM) and ferroelectric (FE) phases are combined e.g. including FM particles in a FE matrix or embedding fibers of the one phase into a matrix of the other. The ME coupling is then accomplished indirectly via strain fields exploiting magnetostrictive and piezoelectric effects. This requires a poling of the composite, where the structure is exposed to both large magnetic and electric fields. The efficiency of ME coupling will strongly depend on the poling process. Besides the alignment of local polarization and magnetization, it is going along with cracking, also being decisive for the coupling properties. Nonlinear ferroelectric and ferromagnetic constitutive equations have been developed and implemented within the framework of a multifield, two-scale FE approach. The models are microphysically motivated, accounting for domain and Bloch wall motions. A second, so called condensed approach is presented which doesn't require the implementation of a spatial discretisation scheme, however still considering grain interactions and residual stresses. A micromechanically motivated continuum damage model is established to simulate degradation processes. The goal of the simulation tools is to predict the different constitutive behaviors, ME coupling properties and lifetime of smart magnetoelectric devices.

  2. The converse magnetoelectric coupling in asymmetric granule/matrix composite film with Ni/PZT component

    Science.gov (United States)

    Chen, Bo; Su, Ning-Ning; Cui, Wen-Li; Yan, Shi-Nong

    2018-04-01

    In this work, a type of asymmetric granule/matrix composite film is designed, where the Ni granule is dispersed in PZT matrix, meanwhile the top and bottom electrode is constituted by Au and SRO respectively. Predicted through the electrostatic screening model and mean field approximation, considerable electrostatic charge is induced on Ni granule surface by ferroelectric PZT polarization. Predicted through the spin splitting model and spherical shell approximation, both the magnetization and magnetic anisotropy of Ni granule are modulated by ferroelectric PZT polarization. As the volume fraction of Ni granule is increased, the electric modulation of magnetization and magnetic anisotropy is reduced and enhanced respectively. As the dimension of granule/matrix composite is varied, such modulation is retained. Due to the large area-volume ratio of nano-granule, this work benefits to realize the converse magnetoelectric coupling in nanoscale.

  3. Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

    KAUST Repository

    Hu, Weijin; Wang, Zhihong; Du, Yuanmin; Zhang, Xixiang; Wu, Tao

    2014-01-01

    We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current

  4. Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

    Science.gov (United States)

    Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

    2018-02-01

    Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

  5. Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates

    International Nuclear Information System (INIS)

    Parashar, S; Raju, A R; Rao, C N R; Victor, P; Krupanidhi, S B

    2003-01-01

    YMnO 3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion

  6. Down-conversion luminescence and its temperature-sensing properties from Er3+-doped sodium bismuth titanate ferroelectric thin films

    Science.gov (United States)

    Wang, Shanshan; Zheng, Shanshan; Zhou, Hong; Pan, Anlian; Wu, Guangheng; Liu, Jun-ming

    2015-11-01

    Here, we demonstrate outstanding temperature-sensing properties from Na0.5Bi0.49Er0.01TiO3 (NBT:Er) thin films. The perovskite phase for them is stable in the temperature range from 80 to 440 K. Interestingly, the Er doping enhances the ferroelectric polarization and introduces local dipolar, which are positive for temperature sensing. Pumped by a 488-nm laser, the NBT:Er thin films show strong green luminescence with two bands around 525 and 548 nm. The intensity ratio I 525/ I 548 can be used for temperature sensing, and the maximum sensitivity is about 2.3 × 10-3 K-1, higher than that from Er-doped silicon oxide. These suggest NBT:Er thin film is a promising candidate for temperature sensor.

  7. Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

    Science.gov (United States)

    Young, T.; Sharma, P.; Kim, D. H.; Ha, Thai Duy; Juang, Jenh-Yih; Chu, Y.-H.; Seidel, J.; Nagarajan, V.; Yasui, S.; Itoh, M.; Sando, D.

    2018-02-01

    We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ˜50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T') phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T' phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T'-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

  8. Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

    International Nuclear Information System (INIS)

    Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

    2018-01-01

    La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping. (orig.)

  9. Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol-gel process

    Science.gov (United States)

    Xiao, Mi; Zhang, Zebin; Zhang, Weikang; Zhang, Ping

    2018-01-01

    La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on platinized silicon substrates by sol-gel process. The effects of La or W dopant on the phase development, microstructure, dielectric and ferroelectric characteristics of films were studied. For PLZT films, the optimum doping concentration was found to be 2 mol%. While for PZTW films, the dielectric and ferroelectric properties were found to be improved as the doping concentration increased. The fatigue properties of PLZT and PZTW thin films were also investigated, the results showed that A- or B-site donor doping could improve the fatigue properties of PZT thin films. The theory of oxygen vacancy was used to explain the performance improvement caused by donor doping.

  10. Superior piezoelectric composite films: taking advantage of carbon nanomaterials.

    Science.gov (United States)

    Saber, Nasser; Araby, Sherif; Meng, Qingshi; Hsu, Hung-Yao; Yan, Cheng; Azari, Sara; Lee, Sang-Heon; Xu, Yanan; Ma, Jun; Yu, Sirong

    2014-01-31

    Piezoelectric composites comprising an active phase of ferroelectric ceramic and a polymer matrix have recently found numerous sensory applications. However, it remains a major challenge to further improve their electromechanical response for advanced applications such as precision control and monitoring systems. We here investigated the incorporation of graphene platelets (GnPs) and multi-walled carbon nanotubes (MWNTs), each with various weight fractions, into PZT (lead zirconate titanate)/epoxy composites to produce three-phase nanocomposites. The nanocomposite films show markedly improved piezoelectric coefficients and electromechanical responses (50%) besides an enhancement of ~200% in stiffness. The carbon nanomaterials strengthened the impact of electric field on the PZT particles by appropriately raising the electrical conductivity of the epoxy. GnPs have been proved to be far more promising in improving the poling behavior and dynamic response than MWNTs. The superior dynamic sensitivity of GnP-reinforced composite may be caused by the GnPs' high load transfer efficiency arising from their two-dimensional geometry and good compatibility with the matrix. The reduced acoustic impedance mismatch resulting from the improved thermal conductance may also contribute to the higher sensitivity of GnP-reinforced composite. This research pointed out the potential of employing GnPs to develop highly sensitive piezoelectric composites for sensing applications.

  11. Superior piezoelectric composite films: taking advantage of carbon nanomaterials

    International Nuclear Information System (INIS)

    Saber, Nasser; Araby, Sherif; Meng, Qingshi; Hsu, Hung-Yao; Lee, Sang-Heon; Ma, Jun; Yan, Cheng; Xu, Yanan; Azari, Sara; Yu, Sirong

    2014-01-01

    Piezoelectric composites comprising an active phase of ferroelectric ceramic and a polymer matrix have recently found numerous sensory applications. However, it remains a major challenge to further improve their electromechanical response for advanced applications such as precision control and monitoring systems. We here investigated the incorporation of graphene platelets (GnPs) and multi-walled carbon nanotubes (MWNTs), each with various weight fractions, into PZT (lead zirconate titanate)/epoxy composites to produce three-phase nanocomposites. The nanocomposite films show markedly improved piezoelectric coefficients and electromechanical responses (50%) besides an enhancement of ∼200% in stiffness. The carbon nanomaterials strengthened the impact of electric field on the PZT particles by appropriately raising the electrical conductivity of the epoxy. GnPs have been proved to be far more promising in improving the poling behavior and dynamic response than MWNTs. The superior dynamic sensitivity of GnP-reinforced composite may be caused by the GnPs’ high load transfer efficiency arising from their two-dimensional geometry and good compatibility with the matrix. The reduced acoustic impedance mismatch resulting from the improved thermal conductance may also contribute to the higher sensitivity of GnP-reinforced composite. This research pointed out the potential of employing GnPs to develop highly sensitive piezoelectric composites for sensing applications. (paper)

  12. Dynamics of ferroelectric nanodomains in BaTiO3 epitaxial thin films via piezoresponse force microscopy

    International Nuclear Information System (INIS)

    Pertsev, N A; Petraru, A; Kohlstedt, H; Waser, R; Bdikin, I K; Kiselev, D; Kholkin, A L

    2008-01-01

    Ferroelectric nanodomains were created in BaTiO 3 thin films by applying a voltage to a sharp conducting tip of a scanning force microscope (SFM). The films were epitaxially grown on SrRuO 3 -covered (001)-oriented SrTiO 3 substrates by a high-pressure sputtering. They appeared to be single-crystalline with the (001) crystallographic orientation relative to the substrate. Using the piezoresponse mode of the SFM to detect the out-of-plane film polarization, the domain sizes were measured as a function of the applied writing voltage and the pulse time. It was found that the time dependence of the domain diameter in a 60 nm thick BaTiO 3 film deviates significantly from the logarithmic law observed earlier in Pb(Zr 0.2 Ti 0.8 )O 3 (PZT) films. At a given writing time, the domain size increases nonlinearly with increasing applied voltage, in contrast to the linear behavior reported earlier for PZT films and LiNbO 3 single crystals. The dynamics of domain growth is analyzed theoretically taking into account the strong inhomogeneity of the external electric field in the film and the influence of the bottom electrode. It is shown that the observed writing time and voltage dependences of the domain size can be explained by the domain-wall creep in the presence of random-bond disorder

  13. High T(sub c) superconductor/ferroelectric heterostructures

    Science.gov (United States)

    Ryder, Daniel F., Jr.

    1994-12-01

    Thin films of the ferroelectric perovskite, Ba(x) Sr(1-x) TiO3 (BST), were deposited on superconducting (100)YBa2Cu3O(x)(YBCO)/ (100)Yttria-stabilized zirconia(YSZ) substrates and (100)Si by ion-beam sputtering. Microstructural and compositional features of the ceramic bilayer were assessed by a combination of x-ray diffraction (XRD) and scanning electron microscopy. The films were smooth and featureless, and energy dispersive x-ray spectroscopy (EDX) data indicated that film composition closely matched target composition. XRD analysis showed that films deposited on YBCO substrates were highly c-axis textured, while the films deposited on (100)Si did not exhibit any preferred growth morphology. The superconducting properties of the YBCO substrate layer were maintained throughout the processing stages and, as such, it was demonstrated that ion beam sputtering is a viable method for the deposition of Ferroelectric/YBCO heterostructures.

  14. Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

  15. Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba0.5Sr0.5TiO3 thin films studied by Raman spectroscopy

    International Nuclear Information System (INIS)

    Tenne, D.A.; Soukiassian, A.; Xi, X.X.; Taylor, T.R.; Hansen, P.J.; Speck, J.S.; York, R.A.

    2004-01-01

    We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba 0.5 Sr 0.5 TiO 3 films. The films were grown by rf magnetron sputtering on Pt/SiO 2 surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A 1 soft phonon intensity, the ferroelectric phase transition temperature, T C , was determined. We found that T C decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films

  16. Effect of incorporating nonlanthanoidal indium on the ferroelectric performance of Bi4Ti3O12 thin films

    Science.gov (United States)

    Chang, Y. C.; Kuo, D. H.

    2006-08-01

    Nonlanthanoid-substituted In-x-Bi4Ti3O12 films with different indium contents at x =0, 0.2, 0.4, and 0.5, based upon the chemical formula of (Bi4-xInx)Ti3O12, were prepared at 600°C by chemical solution deposition. In-0.4-Bi4Ti3O12 films displayed a large remanent polarization of 57μC /cm2, coercive field of 100KV/cm, high nonvolatile polarization ⩾30μC/cm2 after 1010 switching cycles, and low annealing temperature of 600°C. Good ferroelectric properties are mainly attributed to the partial substitution of the smaller-sized Ti4+ site by the larger-sized In3+ to enhance electrical polarization by a dimensional change of unit cell and to provide fatigue resistance by lattice distortion and chemical stabilization.

  17. Ferroelectric Thin Films III, Symposium Held in San Francisco, California on April 13 - 16, 1993. Materials Research Society Symposium Proceedings, Volume 310

    Science.gov (United States)

    1993-04-16

    Publication Data Ferroelectric thin films III : symposium held April 13-16, 1993, San Francisco,California, U.S.A. / editors, Bruce A. Turtle , Edwlrd R...All solutions were placed in a modified Collison Nebulizer which generated the droplets in an oxygen carrier gas. The droplets were transported into

  18. Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure

    Science.gov (United States)

    Zhao, Xu-Wen; Gao, Guan-Yin; Yan, Jian-Min; Chen, Lei; Xu, Meng; Zhao, Wei-Yao; Xu, Zhi-Xue; Guo, Lei; Liu, Yu-Kuai; Li, Xiao-Guang; Wang, Yu; Zheng, Ren-Kui

    2018-05-01

    Copper-based ZrCuSiAs-type compounds of LnCuChO (Ln =Bi and lanthanides, Ch =S , Se, Te) with a layered crystal structure continuously attract worldwide attention in recent years. Although their high-temperature (T ≥ 300 K) electrical properties have been intensively studied, their low-temperature electronic transport properties are little known. In this paper, we report the integration of ZrCuSiAs-type copper oxyselenide thin films of B i0.94P b0.06CuSeO (BPCSO) with perovskite-type ferroelectric Pb (M g1 /3N b2 /3 ) O3-PbTi O3 (PMN-PT) single crystals in the form of ferroelectric field effect devices that allow us to control the electronic properties (e.g., carrier density, magnetoconductance, dephasing length, etc.) of BPCSO films in a reversible and nonvolatile manner by polarization switching at room temperature. Combining ferroelectric gating and magnetotransport measurements with the Hikami-Larkin-Nagaoka theory, we demonstrate two-dimensional (2D) electronic transport characteristics and weak antilocalization effect as well as strong carrier-density-mediated competition between weak antilocalization and weak localization in BPCSO films. Our results show that ferroelectric gating using PMN-PT provides an effective and convenient approach to probe the carrier-density-related 2D electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films.

  19. Biosensors Based on Ultrathin Film Composite Membranes

    Science.gov (United States)

    1994-01-25

    composite membranes should have a number C •’ of potential advantages including fast response time, simplicity of construction, and applicability to a number...The support membrane for the ultrathin film composite was an Anopore ( Alltech Associates) microporous alumina filter, these membranes are 55 Pm thick...constant 02 concentration in this solution. Finally, one of the most important potential advantage of a sensor based on an ultrathin film composite

  20. Sol-gel reaction stability studied: Influence in the formation temperature and properties of ferroelectric thin films

    International Nuclear Information System (INIS)

    Perez, J.; Vilarinho, P.M.; Kholkin, A.L.; Almeida, A.

    2009-01-01

    Lead zirconium titanate (PZT) sol-gel solutions were prepared based on distilled lead acetate precursor solutions. A detailed analysis of the distillation effect on the lead precursor and the final PZT solution were carried out by Infrared and Raman techniques. It was found that the increase in the number of distillation steps experienced by the lead precursor solutions removes the constitutional water and increases the lead acetate-2-methoxyethanol interconnectivity; thus improving stability and avoiding the aging effect of the resulting PZT solutions. The thermal decomposition process of the PZT solutions was analyzed based on the thermogravimetric (TG) and differential thermogravimetric analysis (DTA) measurements. It was found that as the number of distillation steps in the lead precursor solutions increases, the decomposition rate increases and the formation temperature of pure perovskite PZT films decreases. X-ray diffraction (XRD) technique was used to study the film phase formation. A pure perovskite phase at 500 deg. C was found by the XRD analysis after the second distillation step. Scanning electron microscope technique was used to carry out the microstructural analysis. Dense microstructure was found in all analyzed films and an incipient columnar grain growth was revealed in PZT films prepared based on lead precursor solution with more than three distillation steps. The dependence of the dielectric, ferroelectric and piezoelectric properties on the number of distillation steps was revealed and a correlation between the distillation process, film microstructure properties and electrical performance was established

  1. Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55 Thin Film on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Tao Zhang

    2015-01-01

    Full Text Available The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS. The ternary compound ferroelectric thin films 0.06Pb(Mn1/3, Nb2/3O3 + 0.94Pb(Zr0.45, Ti0.55O3 (0.06PMnN-0.94PZT(45/55 were deposited on silicon(100 substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55 films were also deposited. The results show that both of thin films show polycrystal structures with the main (111 and (101 orientations. The transverse piezoelectric coefficients are e31,eff=−4.03 C/m2 and e31,eff=-3.5 C/m2, respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are 2Ec=147.31 kV/cm and 2Ec=135.44 kV/cm, and the saturation polarization Ps=30.86 μC/cm2 and Ps=17.74 μC/cm2, and the remnant polarization Pr=20.44 μC/cm2 and Pr=9.87 μC/cm2, respectively. Moreover, the dielectric constants and loss are εr=681 and D=5% and εr=537 and D=4.3%, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55 thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.

  2. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  3. Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matzen, Sylivia [University of Groningen, The Netherlands; Nesterov, Okeksiy [ORNL; Rispens, Gregory [University of Groningen, The Netherlands; Heuver, J. A. [University of Groningen, The Netherlands; Bark, C [University of Wisconsin, Madison; Biegalski, Michael D [ORNL; Christen, Hans M [ORNL; Noheda, Beatriz [University of Groningen, The Netherlands

    2014-01-01

    Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.

  4. Cofiring behavior and interfacial structure of NiCuZn ferrite/PMN ferroelectrics composites for multilayer LC filters

    International Nuclear Information System (INIS)

    Miao Chunlin; Zhou Ji; Cui Xuemin; Wang Xiaohui; Yue Zhenxing; Li Longtu

    2006-01-01

    The cofiring behavior, interfacial structure and cofiring migration between NiCuZn ferrite and lead magnesium niobate (PMN)-based relaxor ferroelectric materials were investigated via thermomechanical analyzer (TMA), X-ray diffractometer (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Mismatched sintering shrinkage between NiCuZn ferrite and PMN was modified by adding an appropriate amount of sintering aids, Bi 2 O 3 , into NiCuZn ferrite. Pyrochlore phase appeared in the mixture of NiCuZn ferrite and PMN, which is detrimental to the final electric properties of LC filters. EDS results indicated that the interdiffusion at the heterogeneous interfaces in the composites, such as Fe, Pb, Zn, existed which can strengthen combinations between ferrite layers and ferroelectrics layers

  5. Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

    Science.gov (United States)

    Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

    2014-10-14

    Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

  6. Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

    Science.gov (United States)

    Zhu, Q. X.; Wang, W.; Zhao, X. Q.; Li, X. M.; Wang, Y.; Luo, H. S.; Chan, H. L. W.; Zheng, R. K.

    2012-05-01

    Tensiled La0.5Sr0.5CoO3 (LSCO) thin films were epitaxially grown on piezoelectric 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. Due to the epitaxial nature of the interface, the lattice strain induced by ferroelectric poling or the converse piezoelectric effect in the PMN-PT substrate is effectively transferred to the LSCO film and thus reduces the tensile strain of the film, giving rise to a decrease in the resistivity of the LSCO film. We discuss these strain effects within the framework of the spin state transition of Co3+ ions and modification of the electronic bandwidth that is relevant to the induced strain. By simultaneously measuring the strain and the resistivity, quantitative relationship between the resistivity and the strain was established for the LSCO film. Both theoretical calculation and experimental results demonstrate that the ferroelectric field effect at room temperature in the LSCO/PMN-PT field-effect transistor is minor and could be neglected. Nevertheless, with decreasing temperature, the ferroelectric field effect competes with the strain effect and plays a more and more important role in influencing the electronic transport properties of the LSCO film, which we interpreted as due to the localization of charge carriers at low temperature.

  7. Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films

    International Nuclear Information System (INIS)

    Bai, W.; Zhu, J.Y.; Wang, J.L.; Lin, T.; Yang, J.; Meng, X.J.; Tang, X.D.; Zhu, Z.Q.; Chu, J.H

    2012-01-01

    The effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius layer-structured Bi 5 Ti 3 FeO 15 (BTF) films were investigated. It was found that an annealing temperature above 625 °C can lead to the appearance of Bi 4 Ti 3 O 12 (BiT) secondary phase on Pt substrates. The reduction of the grain sizes was simultaneously confirmed by X-ray diffraction and atomic force microscopy with the introduction of the BiT phase. Moreover, the remanent polarization and coercive field of the BTF films were dramatically enhanced with the introduction of the BiT phase. Improved ferromagnetism for the BTF films was demonstrated upon increasing annealing temperature. Our data indicated that the ferroelectricity strongly correlated with the growth orientation of the BTF films. Finally, the possible factors for the obvious increase of the remanent polarization and coercive field, and the possible reasons for the enhanced ferromagnetic properties were discussed with increasing annealing temperature. - Highlights: ► Effects of annealing temperature on physical properties of BTF films were studied. ► Improved multiferroic properties were shown with annealing temperature. ► Ferroelectricity strongly depended on the growth orientation of the BTF films. ► Possible factors were proposed to explain the improved multiferroic properties.

  8. Ferroelectrics principles, structure and applications

    CERN Document Server

    Merchant, Serena

    2014-01-01

    Ferroelectric physics is a theory on ferroelectric phase transition for explaining various related phenomena, which is different from dielectric physics. Ferroelectric materials are important functional materials for various applications such as NVRAMs, high energy density capacitors, actuators, MEMs, sonar sensors, microphones and scanning electron microscopes (SEM). This book investigates the dielectric, ferroelectric and energy storage properties of barium zirconate-titanate/barium calcium-titanate (BZT-BCT) based ceramic for high energy density capacitors. It also compares the energy storage capabilities of ceramic powders with polymer-ceramic nanocomposites; and discusses dielectric properties of ferroelectricity in composition distributions.

  9. Improved high-frequency soft magnetic properties of FeCo films on organic ferroelectric PVDF substrate

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dong; Wang, Zhen; Han, Xuemeng; Li, Yue; Guo, Xiaobin; Zuo, Yalu; Xi, Li, E-mail: xili@lzu.edu.cn

    2015-02-01

    FeCo films with various thicknesses were fabricated by direct-current magnetron sputtering on corning glass and organic ferroelectric PVDF substrates at the same time with 5 nm Ru seed layer and 5 nm Ta protective layer. The in-plane uniaxial anisotropy field of FeCo on glass substrate increases from 24 to 36 Oe with the increase of FeCo film thickness from 5 to 100 nm. However, a large in-plane anisotropy field of FeCo on PVDF substrate increases with FeCo thickness from 5 to 20 nm and gradually decreases with the FeCo thickness further increasing. Atomic force microscope images of FeCo on glass show quite smooth surface with root-mean-square roughness around 0.5 nm and have none visible granules on the surface for all samples. While, AFM images of FeCo on PVDF show quite rough surface with RMS roughness around 25 nm and have visible granules with the smallest granules appearing at the FeCo thickness of 20 nm. The permeability spectra show the typical ferromagnetic resonance phenomenon and can be well fitted by the LLG equation with the obtained experimental parameters. The ferromagnetic resonance frequency can reach 7.0 GHz for the 20 nm FeCo film on PVDF. Moreover, the quality factor of this sample can respectively reach 26, 12 and 7 at 1.0, 2.0, and 3.0 GHz, indicating the potential real 3G application for high-frequency devices. - Highlights: 1.Magnetic and morphological properties of FeCo films on PVDF substrates are studied. 2.The large anisotropy field of FeCo films on PVDF is obtained. 3.Improved high frequency properties of FeCo films on flexible substrates are obtained. 4.The origin of improved high frequency properties of FeCo films on PVDF is studied.

  10. Application of composition modulated thin films

    International Nuclear Information System (INIS)

    Hilliard, J.E.

    1979-01-01

    Film produced by evaporating two components through a rotating pinwheel shutter which cuts off the vapor first from one source and then the other are evaluated. These films have a modulated composition rather than a layered structure. Mechanical properties were determined using a bulge tester

  11. Ferroelectric materials and their applications

    CERN Document Server

    Xu, Y

    2013-01-01

    This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable

  12. Anelastic deformation of Pb(Zr,Ti)O3 thin films by non-180 deg. ferroelectric domain wall movements during nanoindentation

    International Nuclear Information System (INIS)

    Alguero, M.; Bushby, A.J.; Reece, M.J.; Seifert, A.

    2002-01-01

    Lead zirconate titanate Pb(Zr,Ti)O 3 ferroelectric thin films show significant anelastic deformation when indented with spherical tipped indenters. Experiments on films with different Zr/Ti ratio and a mixed , preferred crystallographic orientation have shown that there is a good agreement between the anelastic deformation and the maximum strain achievable by non-180 deg. domain wall movement. An expected increase of the indentation stiffness of the films also accompanies the anelastic deformation because of the single crystal elastic anisotropy. All these observations seem to indicate that non-180 deg. ferroelectric domain wall movements occur under indentation stresses and cause anelasticity. Stresses for maximum anelastic deformation are compared with those for recently reported stress-induced depolarization

  13. Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films

    Science.gov (United States)

    Braun, Dorothee; Schmidbauer, Martin; Hanke, Michael; Schwarzkopf, Jutta

    2018-01-01

    The formation process of a ferroelectric multi-rank domain pattern in the thickness range of 7-52 nm is investigated for monoclinic K0.9Na0.1NbO3 strained epitaxial films on (110) NdScO3 substrates. Although the elastic strain energy density is degenerated for two pseudocubic orientations, a distinctive hierarchy of domain evolution is observed with exclusive in-plane a1a2 domains for very thin films and the retarded onset of a ferroelectric MC phase at larger film thickness. This is accompanied by a thickness dependent transformation from stripe domains to a herringbone pattern and, eventually, for the thickest film, to a checkerboard-like structure. These transformations in the domain arrangement and width are correlated to energetic aspects as depolarization field and anisotropic strain relaxation in the film. While for the MC domains plastic strain relaxation is throughout observed, the a1a2 domains show a two-step strain relaxation mechanism starting with an in-plane elastic shearing, which is followed by plastic lattice relaxation. Our results highlight a pathway for engineering and patterning of periodic ferroelectric domain structures.

  14. Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

    KAUST Repository

    Yao, Yingbang; Mak, C. L.

    2014-01-01

    were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis

  15. Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films

    International Nuclear Information System (INIS)

    Vendrell, X.; Raymond, O.; Ochoa, D.A.; García, J.E.; Mestres, L.

    2015-01-01

    Lead-free (K,Na)NbO 3 (KNN) and La doped (K,Na)NbO 3 (KNN-La) thin films are grown on SrTiO 3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0–20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K 4 Nb 6 O 17 , as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80–380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. - Highlights: • (K 0.5 Na 0.5 )NbO 3 and [(K 0.5 Na 0.5 ) 0.985 La 0.005 ]NbO 3 thin films have been prepared. • The obtained thin films show an excellent (100) preferred orientation. • Doping with lanthanum results in a decrease of the leakage current density. • The dielectric properties are enhanced when doping with lanthanum

  16. Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

    Science.gov (United States)

    Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

    2018-03-01

    For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

  17. Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50(Ti0.80Sn0.20O3 Thin Films Prepared Using Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Venkata Sreenivas Puli

    2015-01-01

    Full Text Available Nanoscale switchable ferroelectric (Ba0.50Sr0.50(Ti0.80Sn0.20O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM technique has been employed to acquire out-of-plane (OPP piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

  18. Tunability, dielectric, and piezoelectric properties of Ba{sub (1−x)}Ca{sub x}Ti{sub (1−y)}Zr{sub y}O{sub 3} ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Daumont, C. J. M., E-mail: christophe.daumont@univ-tours.fr; Le Mouellic, E.; Negulescu, B.; Wolfman, J. [Laboratoire GREMAN, UMR7347 CNRS, Faculté de Sciences et Techniques, Université François Rabelais, 37200 Tours (France); Simon, Q.; Payan, S.; Maglione, M. [Institute of Condensed Matter Chemistry of Bordeaux, ICMCB-CNRS, Université de Bordeaux, 33608 Pessac Cedex (France); Gardes, P.; Poveda, P. [STMicroelectronics, 10 rue Thalès de Milet, 37071 Tours Cedex (France)

    2016-03-07

    Tunable ferroelectric capacitors, which exhibit a decrease of the dielectric permittivity (ϵ) under electric field, are widely used in electronics for RF tunable applications (e.g., antenna impedance matching). Current devices use barium strontium titanate as the tunable dielectric, and the need for performance enhancement of the tunable element is the key for device improvement. We report here on libraries of Ba{sub 0.97}Ca{sub 0.03}Ti{sub 1−x}Zr{sub x}O{sub 3} thin films (0 ≤ x ≤ 27%) with a thickness of about 130 nm deposited on IrO{sub 2}/SiO{sub 2}/Si substrates using combinatorial pulsed laser deposition allowing for gradients of composition on one sample. A total of 600 capacitors on a single sample were characterized in order to statistically investigate the dielectric properties. We show that the tunabilty is maximum at intermediate compositions, reaching values up to 60% for an electric field of about 400 kV cm{sup −1}. We attribute the high tunability in the intermediate compositions to the paraelectric-ferroelectric phase transition, which is brought down to room temperature by the addition of Zr. In addition, the piezoelectric coefficient is found to be decreasing with increasing Zr content.

  19. Size effects on structural and dielectric properties of PZT thin films at compositions around the morpho tropic phase boundary

    International Nuclear Information System (INIS)

    Lima, Elton Carvalho; Araujo, Eudes Borges; Souza Filho, Antonio Gomes de; Bdikin, Igor

    2011-01-01

    Full text: The demand for portability in consumer electronics has motivated the understanding of size effects on ferroelectric thin films. The actual comprehension of these effects in ferroelectrics is unsatisfactory, since the polarization interacts more strongly than other order parameters such as strain and charge. As a result, extrinsic effects are produced if these variables are uncontrolled and problems such as ferroelectric paraelectric phase transition at nanometers scale remains an unsolved issue. In the present work, the effects of thickness and compositional fractions on the structural and dielectric properties of PbZr 1-x Ti x O 3 (PZT) thin films were studied at a composition around the morphotropic phase boundary (x = 0.50). For this purpose, thin films with different thicknesses and different PbO excess were deposited on Si(100) and Pt=T iO 2 =SiO 2 =Si substrates by a chemical method and crystallized in electric furnace at 700 deg C for 1 hour. The effects of substrate, pyrolysis temperature and excess lead addition in the films are reported. For films with 10 mol% PbO in excess, the pyrolysis in the regime of 300 deg C for 30 minutes was observed to yield PZT pyrochlore free thin films deposited on Pt=T iO 2 =SiO 2 =Si substrate. Out this condition, the transformation from amorphous to the pyrochlore metastable phase is kinetically more favorable that a transformation to the perovskite phase, which is thermodynamically stable. Rietveld refinements based on X-ray diffraction results showed that films present a purely tetragonal phase and that this phase does not change when the film thickness decreases. The dielectric permittivity measurements showed a monoclinic → tetragonal phase transition at 198K. Results showed that the dielectric permittivity (ε) increases continuously from 257 to 463, while the thickness of the PZT films increases from 200 to 710 nm. These results suggests that interface pinning centers can be the responsible mechanism by

  20. Dynamic response in a finite size composite multiferroic thin film

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zidong, E-mail: Zidong.Wang@auckland.ac.nz; Grimson, Malcolm J. [Department of Physics, The University of Auckland, Auckland 1010 (New Zealand)

    2016-03-28

    Composite multiferroics, heterostructures of ferromagnetic and ferroelectric materials, are characterized by a remarkable magnetoelectric effect at the interface. Previous work has supported the ferromagnetic structure with magnetic spins and the ferroelectric with pseudospins which act as electric dipoles in a microscopic model, coupled with a magnetoelectric interaction [Wang and Grimson, J. Appl. Phys. 118, 124109 (2015)]. In this work, by solving the stochastic Landau-Lifshitz-Gilbert equation, the electric-field-induced magnetization switching in a twisted boundary condition has been studied, and a behavior of domain wall in the ferromagnetic structure is discussed.

  1. Electrical and optical properties of a kind of ferroelectric oxide films comprising of PbZr0.4Ti0.6O3 stacks

    Science.gov (United States)

    Li, Shimin; Ma, Guohong; Wang, Chao; Zhao, Wenchao; Chen, Xiaoshuang; Chu, Junhao; Dai, Ning; Shi, Wangzhou; Hu, Gujin

    2017-07-01

    A type of ferroelectric oxide films, consisting of three PbZr0.4Ti0.6O3 stacks with different periodic thicknesses, has been designed and fabricated on F-doped transparent conductive tin oxide substrates by using one single precursor solution and spinning-coating process. These films exhibit superior ferroelectric, dielectric, and optical performance. Each PbZr0.4Ti0.6O3 multilayer has a high reflectivity band with ˜110 nm photonic band width and average reflectivity of >80%, a dielectric constant of 530 and dielectric tunability of ˜28% at 1 MHz, a remnant polarization of 36 μC/cm2, and a polarization loss of cycles, rendering their perspective application in photonic band-gap engineering, microwave tunable devices, and integrated optoelectronics.

  2. Magnetic and ferroelectric properties of Fe doped SrTiO{sub 3-{delta}} films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A Sendil; Suresh, P; Srinath, S [School of Physics, University of Hyderabad, Hyderabad, 500 046 (India); Kumar, M Mahesh; Post, M L [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, ON, K1A 0R6 (Canada); Srikanth, H [Materials Physics Laboratory, Department of Physics, University of South Florida, Tampa, Florida, 33620 (United States); Sahner, Kathy; Moos, Ralf, E-mail: sssp@uohyd.ernet.i [Functional Materials, University of Bayreuth, 95447, Bayreuth (Germany)

    2010-01-01

    Recent interest in SrTiO{sub 3} stems from its wide applicability in microwave devices based on the tunable characteristics of dielectric constant in the microwave frequency range. It is obvious that for any such application, SrTiO{sub 3} should have a ferroelectric Curie temperature (T{sub C}) close to room temperature or higher. By inducing strains by chemical substitutions, it was possible to obtain T{sub C} as high as 200{sup 0}C in SrTiO{sub 3} modified with Fe{sup 4+}. Hysteresis loops obtained confirms the presence of ferroelectric domains. Two apparent transitions, one at {approx}200 {sup 0}C and another {approx}300 {sup 0}C were seen in {epsilon}', which are replicated as sharp drops in resistivity curves. These temperatures far exceed the T{sub C}s reported in the literature till now and could open new avenues for innumerable other applications for SrTiO{sub 3}. The magnetic properties of Fe doped SrTiO{sub 3} are also investigated. Low doping of Fe exhibits simple antiferromagnetic behaviour.

  3. DIELECTRIC AND PYROELECTRIC PROPERTIES OF THE COMPOSITES OF FERROELECTRIC CERAMIC AND POLY(VINYL CHLORIDE

    Directory of Open Access Journals (Sweden)

    M.Olszowy

    2003-01-01

    Full Text Available The dielectric and pyroelectric properties of lead zirconate titanate/poly(vinyl chloride [PZT/PVC] and barium titanate/poly(vinyl chloride [BaTiO3/ PVC] composites were studied. Flexible composites were fabricated in the thin films form (200-400 μm by hot-pressed method. Powders of PZT or BaTiO3 in the shape of ≤ 75 μm ceramics particles were dispersed in a PVC matrix, providing composites with 0-3} connectivity. Distribution of the ceramic particles in the polymer phase was examined by scanning electron microscopy. The analysis of the thermally stimulated currents (TSC have also been done. The changes of dielectric and pyroelectric data on composites with different contents of ceramics up to 40% volume were investigated. The dielectric constants were measured in the frequency range from 600 Hz to 6 MHz at room temperature. The pyroelectric coefficient for BaTiO3/PVC composite at 343 K is about 35 μC/m2K which is higher than that of β-PVDF (10 μC/m2 K.

  4. Pyroelectric properties of finite size ferroelectric thin films with structural transition zones

    International Nuclear Information System (INIS)

    Zhou Jing; Lue Tianquan; Sun Punan; Xie Wenguang; Cao Wenwu

    2009-01-01

    A Fermi-type Green's function is used to study pyroelectric properties of the thin film with finite sizes in three dimensions based on a modified transverse Ising model. The results demonstrate that a decrease in the lateral size of the film has a disadvantageous influence on the pyroelectric coefficient of the thin film.

  5. Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

    Directory of Open Access Journals (Sweden)

    P. T. Tue

    2013-01-01

    Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

  6. Effects of ferroelectric-poling-induced strain on the electronic transport and magnetic properties of (001)- and (111)-oriented La{sub 0.5}Ba{sub 0.5}MnO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.Y. [Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zheng, M.; Zhu, Q.X.; Yang, M.M.; Li, X.M.; Shi, X. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Yuan, G.L., E-mail: yuanguoliang@mail.njust.edu.cn [Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Wang, Y.; Chan, H.L.W. [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Li, X.G. [Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Luo, H.S. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zheng, R.K., E-mail: zrk@ustc.edu [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2014-04-01

    We epitaxially grew La{sub 0.5}Ba{sub 0.5}MnO{sub 3} (LBMO) films on (001)- and (111)-oriented ferroelectric single-crystal substrates and reduced the in-plane tensile strain of LBMO films by poling the ferroelectric substrates along the 〈001〉 or 〈111〉 direction. Upon poling, a large decrease in the resistance and a considerable increase in the magnetization, Curie temperature, and magnetoresistance were observed for the LBMO film, which are driven by interface strain coupling. Such strain effects can be significantly enhanced by the application of a magnetic field. An overall analysis of the findings reveals that the mutual interaction between the strain and the magnetic field is mediated by the electronic phase separation which is sensitive to both strain and magnetic field. Our findings highlight that the electronic phase separation is crucial in understanding the electric-field-manipulated strain effects in manganite film/ferroelectric crystal heterostructures. - Highlights: • La{sub 0.5}Ba{sub 0.5}MnO{sub 3} films were epitaxially grown on ternary ferroelectric single crystals. • Ferroelectric poling modifies the strain and physical properties of films. • Magnetic field enhances the strain effects of films. • Phase separation is crucial to understand the magnetic-field-tuned strain effect.

  7. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  8. Extrinsic versus intrinsic ferroelectric switching: experimental investigations using ultra-thin PVDF Langmuir-Blodgett films

    International Nuclear Information System (INIS)

    Kliem, H; Tadros-Morgane, R

    2005-01-01

    Mechanisms of extrinsic and intrinsic switching phenomena in ferroelectrics are explained and existing models are summarized. Then, criteria for an experimental distinction between both models are elaborated. Samples with thicknesses ranging from 2.7 to 63.8 nm prepared by a Langmuir-Blodgett technique were investigated with respect to these criteria. Measurements of their polarization switching behaviour, their polarization hysteresis loops, and their coercive fields were carried out. It is found that the coercive fields increase with decreasing sample thickness. Also, the switching time increases with decreasing sample thickness and it increases with decreasing field strength. The switching process turns out to be thermally activated. We find that neither intrinsic nor extrinsic models are sufficient to describe the experimental situation

  9. Effects of heat-treatment conditions on electrical properties of sol-gel-derived ferroelectric Pb(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Shim, Donghyun; Pak, Jaemoon; Nam, Kuangwoo; Park, Gwangseo

    2005-01-01

    Pb(Zr,Ti)O 3 (PZT) films with Zr/Ti ratio of 50 : 50 were prepared by spin-casting at 3000 rpm for 30 sec on Pt/Ti/SiO 2 /Si substrates. After standard processing procedure, three different methods of annealing were conducted at 600 .deg. C : a single-step process carried out in (a) air, and (b) O 2 ambient, and (c) a 2-step process carried out in air, followed by an O 2 annealing process. These films were highly oriented along the (111) direction with large remnant polarization and low coercive voltage values. The films treated in O 2 had relatively larger polarization values, but the 2-step-annealed films possessed lower coercive voltage. Fatigue measurements were conducted until 1 X 10 10 switching cycles, resulting in abnormal switching characteristics for these films. A comparative study on the ferroelectric and fatigue properties will be emphasized.

  10. Composition, ferroelectric and antiferroelectric ordering in Pb2InNbO6 crystals

    International Nuclear Information System (INIS)

    Bokov, A.A.; Raevskij, I.P.; Smotrakov, V.G.

    1984-01-01

    Effect of thermal treatment on temperatures of phase transitions and electrical properties has been studied in Pb 2 InNbO 6 crystals with the high-temperature phase transition of the order-disorder type in In and Nb cations disposition in crystallographic positions. The order-disorder transition temperature (Tsub(t) approximately 1020 deg C) has been directly determined for the first time using the method of electric conductivity investigation. It has been shown that Pb 2 InNbO 6 in the ordered state represents the antiferroelectric material with the Curie point of 195 deg C, and it represents the ferroelectric material with a smeared transition to the paraelectric phase in the temperature range of 60 deg C in the disordered state. With temperature decrease crystals with the mean ordering degree-paraelectric phase pass to the antiferroelectric phase and then to the ferroelectric phase

  11. Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon

    NARCIS (Netherlands)

    Nguyen, Duc Minh

    2010-01-01

    In this thesis, the integration of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) thin films into piezoelectric microelectromechanical systems (MEMS) based on silicon is studied. In these structures, all epitaxial oxide layers (thin film/electrode/buffer-layer(s)) were deposited by pulsed laser

  12. Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

    Science.gov (United States)

    Silva, J. P. B.; Sekhar, K. C.; Almeida, A.; Agostinho Moreira, J.; Pereira, M.; Gomes, M. J. M.

    2013-11-01

    The Ba0.8Sr0.2TiO3 thin films were grown on the Pt-Si substrate at 700 °C by using a pulsed laser deposition technique at different oxygen partial pressure (PO2) in the range of 1-20 Pa and their properties were investigated. It is observed that the PO2 during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO2, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance-voltage ( C- V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO2 of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.

  13. Upconversion photoluminescence of epitaxial Yb{sup 3+}/Er{sup 3+} codoped ferroelectric Pb(Zr,Ti)O{sub 3} films on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yang, E-mail: zhangy_acd@hotmail.com [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Kämpfe, Thomas [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Bai, Gongxun [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Mietschke, Michael; Yuan, Feifei; Zopf, Michael [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Abel, Stefan [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Eng, Lukas M. [Institut für Angewandte Physik, TU Dresden, 01062 Dresden (Germany); Hühne, Ruben [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Fompeyrine, Jean [IBM Research GmbH, Saümerstrasse 4, 8803 Rüschlikon (Switzerland); Ding, Fei, E-mail: f.ding@ifw-dresden.de [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Schmidt, Oliver G. [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer strasse 70, 09107 Chemnitz (Germany)

    2016-05-31

    Thin films of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} (PZT:Yb/Er) have been epitaxially grown on the SrTiO{sub 3} buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform. - Highlights: • Epitaxial growth of Yb{sup 3+}/Er{sup 3+} codoped Pb(Zr,Ti)O{sub 3} films on SrTiO{sub 3} buffered silicon • Upconversion emissions were obtained from the lanthanide ion doped thin films. • Saturated ferroelectric hysteresis loops were observed. • Polar domains were switched by PFM with a phase change of 180°.

  14. PMN-PT-PZT composite films for high frequency ultrasonic transducer applications.

    Science.gov (United States)

    Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Zheng, Fan; Chen, Rumin; Huang, Yuhong; Zhou, Qifa; Shung, K Kirk

    2012-06-01

    We have successfully fabricated x (0.65PMN-0.35PT)-(1 - x )PZT ( x PMN-PT-(1 - x )PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 µm on platinized silicon substrate by employing a composite sol-gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of x PMN-PT-(1 - x )PZT films show better ferroelectric properties. A representative 0.9PMN-PT-0.1PZT thick film transducer is built. It has 200 MHz center frequency with a -6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB.

  15. PMN-PT–PZT composite films for high frequency ultrasonic transducer applications

    Science.gov (United States)

    Hsu, Hsiu-Sheng; Benjauthrit, Vatcharee; Zheng, Fan; Chen, Rumin; Huang, Yuhong; Zhou, Qifa; Shung, K. Kirk

    2013-01-01

    We have successfully fabricated x(0.65PMN-0.35PT)–(1 − x)PZT (xPMN-PT–(1 − x)PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9 µm on platinized silicon substrate by employing a composite sol–gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of xPMN-PT–(1 − x)PZT films show better ferroelectric properties. A representative 0.9PMN-PT–0.1PZT thick film transducer is built. It has 200 MHz center frequency with a −6 dB bandwidth of 38% (76 MHz). The measured two-way insertion loss is 65 dB. PMID:23750072

  16. Chemical solution deposited BaPbO3 buffer layers for lead zirconate titanate ferroelectric films

    International Nuclear Information System (INIS)

    Tseng, T.-K.; Wu, J.-M.

    2005-01-01

    Conductive perovskite BaPbO 3 (BPO) films have been prepared successfully by chemical solution deposition method through spin-coating on Pt/Ti/SiO 2 /Si substrates. The choice of baking temperature is a key factor on the development of conducting BPO perovskite phase. When the baking temperature is higher than 350 deg. C, the BPO films contain a high content of BaCO 3 phase after annealing at temperatures higher than 500 deg. C. If the baking temperature is chosen lower than 300 deg. C, such as 200 deg. C, the annealed BPO films consist mostly of perovskite with only traces of BaCO 3 . Choosing 200 deg. C as the baking temperature, the BPO films developed single perovskite phase at temperatures as low as 550 deg. C. The perovskite BPO phase is stable in the range of 550-650 deg. C and the measured sheet resistance of the BPO films is about 2-3 Ω/square. The perovskite BPO film as a buffer layer provides improvement in electric properties of lead zirconate titanate films

  17. Improvement in fatigue property for a PZT ferroelectric film device with SRO electrode film prepared by chemical solution deposition

    International Nuclear Information System (INIS)

    Miyazaki, H.; Miwa, Y.; Suzuki, H.

    2007-01-01

    PZT films with (1 0 0) and (1 1 0) orientation were prepared by spin coating using the chemical solution deposition (CSD) method on an SRO/Si or a Pt/Ti/SiO 2 /Si substrate. The remnant polarization and the saturation polarization of the PZT/SRO/Si film were 21 and 35 μC/cm 2 , and those of the PZT/Pt/Ti/SiO 2 /Si film were 20 and 31 μC/cm 2 . The remnant polarization of the PZT/SRO/Si film maintained more than 10 8 switching cycles, and the fatigue property was observed for the PZT film fabricated on the Pt/Ti/SiO 2 /Si electrode

  18. Dielectric, ferroelectric, and thermodynamic properties of silicone oil modified PVDF films for energy storage application

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Bingcheng; Wang, Xiaohui, E-mail: wxh@tsinghua.edu.cn, E-mail: llt-dms@mail.tsinghua.edu.cn; Li, Longtu, E-mail: wxh@tsinghua.edu.cn, E-mail: llt-dms@mail.tsinghua.edu.cn [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Sun, Hui [Aero-Engine Control System Institute, Aviation Industry Corporation of China, Jiangsu, Wuxi 214063 (China)

    2016-06-13

    Silicone oil modified poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) films were fabricated by the blending, casting, and hot-molding methods. The dielectric constant was increased for the 7.4 wt. % and 17.0 wt. % silicone oil modified P(VDF-HFP) films, while the dielectric loss for all blend films are decreased. D-E loops of 7.4 wt. % and 17.0 wt. % silicone oil modified P(VDF-HFP) films become slimmer than the pristine P(VDF-HFP) films. The maximum discharged energy density of 10.3 J/cm{sup 3} was obtained in 7.4 wt. % silicone oil modified P(VDF-HFP) films at the external electric field of 398 kV/mm. The Gibbs energy, miscibility, and phase behavior of binary mixture of P(VDF-HFP) silicone oil were investigated using molecular simulations and the extended Flory–Huggins model revealing favorable interactions and compatibility between P(VDF-HFP) and silicone oil.

  19. Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

    Science.gov (United States)

    Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

    2012-01-05

    In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

  20. Effect of electrical conductivity on the polarization behaviour and pyroelectric, piezoelectric property prediction of 0-3 ferroelectric composites

    International Nuclear Information System (INIS)

    Wei Nian; Zhang Duanming; Yang Fengxia; Han Xiangyun; Zhong Zhicheng; Zheng Keyu

    2007-01-01

    We have investigated the effect of electrical conductivity of the constituents on the poling behaviour of the ceramic inclusions in 0-3 ferroelectric composites which comprise a dilute suspension of spherical particles uniformly distributed in the matrix material. A new model for the pyroelectric and piezoelectric properties in terms of the poling conditions (poling field and poling time) has been developed to include electrical conductivity. Simulated results show that conductivity plays an important role in the poling process. Properly increasing the conductivity of the matrix σ m can enhance the polarization in the ceramic inclusion of the composite P i , thereby making the poling of the composite more efficient. In contrast, higher conductivity of the ceramic inclusion σ i results in lower polarization P i , which is unfavourable to the poling of the composite. These results provide insights into the observed behaviour of 0-3 composites. The model predicts the pyroelectric and piezoelectric properties under different poling conditions, which agree well with the corresponding experimental data

  1. Research and development on university-collaboration type industrial and scientific technologies in fiscal 1999. Achievement report on research and development of the next generation ferroelectric thin film memory (research and development of the next generation ferroelectric memory); 1999 nendo jisedai kyoyudentai memory no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to realize the next generation ferroelectric memory, research and development has been carried out on quality improvement in ferroelectric thin films. This paper summarizes the achievements in fiscal 1999. In the search and research on new ferroelectric materials, discussions were given on such new materials as Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} in addition to the conventional PLZT and SBT. In the research on film forming processes, the sol-gel method, the organic metal gaseous phase growth method and the sputtering method were used. In improving the quality of buffer layers, research was performed to use as a buffer layer the STA/SiON laminated structure in which silicon substrates were nitrided, and a film of SrTa{sub 2}O{sub 6} (STA) being a high ferroelectric material was formed. As a result of the research, a buffer layer having thin films with thickness of 3.7 to 4.8 nm as converted to SiO{sub 2} was obtained, wherein a leak current smaller than the tunnel current of the SiO{sub 2} film having the same thickness was shown. In the search for materials and research on film forming technologies to develop function separated type memory, such pure metals as Pt, Ir and Ru and their conductive oxides were used to evaluate properties as a floating gate electrode. (NEDO)

  2. Multiscale numerical study on ferroelectric nonlinear response of PZT thin films (Conference Presentation)

    Science.gov (United States)

    Wakabayashi, Hiroki; Uetsuji, Yasutomo; Tsuchiya, Kazuyoshi

    2017-06-01

    PZT thin films have excellent performance in deformation precision and response speed, so it is used widely for actuators and sensors of Micro Electro Mechanical System (MEMS). Although PZT thin films outputs large piezoelectricity at morphotropic phase bounfary (MPB), it shows a complicated hysteresis behavior caused by domain switching and structural phase transition between tetragonal and rhombohedral. In general, PZT thin films have some characteristic crystal morphologies. Additionally mechanical strains occur by lattice mismatch with substrate. Therefore it is important for fabrication and performance improvement of PZT thin films to understand the relation between macroscopic hysteresis response and microstructural changes. In this study, a multiscale nonlinear finite element simulation was proposed for PZT thin films at morphotropic phase boundary (MPB) on the substrate. The homogenization theory was employed for scale-bridging between macrostructure and microstructure. Figure 1 shows the proposed multiscale nonlinear simulation [1-3] based on the homogenization theory. Macrostructure is a homogeneous structure to catch the whole behaviors of actuators and sensors. And microstructure is a periodic inhomogeneous structure consisting of domains and grains. Macrostructure and microstructure are connected perfectly by homogenization theory and are analyzed by finite element method. We utilized an incremental form of fundamental constitutive law in consideration with physical property change caused by domain switching and structural phase transition. The developed multiscale finite element method was applied to PZT thin films with lattice mismatch strain on the substrate, and the relation between the macroscopic hysteresis response and microscopic domain switching and structural phase transition were investigated. Especially, we discuss about the effect of crystal morphologies and lattice mismatch strain on hysteresis response.

  3. Model Lung Surfactant Films: Why Composition Matters

    Energy Technology Data Exchange (ETDEWEB)

    Selladurai, Sahana L.; Miclette Lamarche, Renaud; Schmidt, Rolf; DeWolf, Christine E.

    2016-10-18

    Lung surfactant replacement therapies, Survanta and Infasurf, and two lipid-only systems both containing saturated and unsaturated phospholipids and one containing additional palmitic acid were used to study the impact of buffered saline on the surface activity, morphology, rheology, and structure of Langmuir monolayer model membranes. Isotherms and Brewster angle microscopy show that buffered saline subphases induce a film expansion, except when the cationic protein, SP-B, is present in sufficient quantities to already screen electrostatic repulsion, thus limiting the effect of changing pH and adding counterions. Grazing incidence X-ray diffraction results indicate an expansion not only of the liquid expanded phase but also an expansion of the lattice of the condensed phase. The film expansion corresponded in all cases with a significant reduction in the viscosity and elasticity of the films. The viscoelastic parameters are dominated by liquid expanded phase properties and do not appear to be dependent on the structure of the condensed phase domains in a phase separated film. The results highlight that the choice of subphase and film composition is important for meaningful interpretations of measurements using model systems.

  4. Modification of a commercial nanoindentation system for measurement of hysteresis cycles under mechanical load in polycrystalline ferroelectric films

    Directory of Open Access Journals (Sweden)

    Rivero, Doris

    2012-02-01

    Full Text Available A commercial hardness-tester by nanoindentation was modified to use metallic indenter tips for the measurement of hysteresis cycles of ferroelectric films under mechanical load and with high lateral resolution. A novel semi-automatic charge integrating module was developed to this aim. LabVIEW 8.6 graphical programming environment was used to control the data acquisition system (DAS, the sinusoidal high voltage generator (± 300V and the charge integrating module in the measurement of the loops. The software also provides data correction due to non-ferroelectric-switching contributions to obtain reliable remanent polarization (Pr and coercive field (Ec values. It also displays the loops both in polarization-fiel(P-E and current density-field (J-E modes. The experimental set-up was validated with measurements on dense PZT films (10μm on platinised Si substrates. Coherent cycles are obtained using the novel semi-automatic charge integrator , the classical Sawyer and Tower circuit and using an electrometer. Under low indentation load causing quasi-elastic strain, the loops do not show any artifact.

    Se ha modificado un nanoindentador comercial para el uso de puntas metálicas para la medida de ciclos de histéresis en láminas ferroeléctricas bajo carga mecánica y con alta resolución lateral. A este fin, se ha desarrollado un circuito integrador de carga semi-automático. Se ha utilizado el entorno de programación gráfica LabVIEW 8.6 para el control del sistema de adquisición de datos (SAD, un generador de alto voltaje sinusoidal (± 300V y el circuito integrador en la medida del ciclo. El software desarrollado también realiza la corrección de los ciclos por sustracción de las contribuciones no debidas a la inversión de la polarización ferroeléctrica en la obtención de valores fiables de polarización remanente (Pr y campo coercitivo (Ec. La representación del ciclo puede hacerse como

  5. Strain-controlled optical absorption in epitaxial ferroelectric BaTiO.sub.3./sub. films

    Czech Academy of Sciences Publication Activity Database

    Chernova, Ekaterina; Pacherová, Oliva; Chvostová, Dagmar; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; Tyunina, Marina

    2015-01-01

    Roč. 106, č. 19 (2015), "192903-1"-"192903-4" ISSN 0003-6951 R&D Projects: GA ČR GA15-13778S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : thin-films * polarization * evolution * SrTiO 3 Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.142, year: 2015

  6. Losses in Ferroelectric Materials

    Science.gov (United States)

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    loss mechanisms are discussed in terms of compositions, crystal structures, temperature, domain configurations, domain sizes and grain boundaries. The intrinsic and extrinsic contributions to the total energy dissipation are quantified. In domain engineered ferroelectric single crystals and ceramics, polarization rotations, domain wall motions and mechanical wave scatterings at grain boundaries are believed to control the mechanical quality factors of piezoelectric resonators. We show that a thorough understanding on the kinetic processes is critical in analyzing energy loss behavior and other time-dependent properties in ferroelectric materials. At the end of the review, existing challenges in the study and control of losses in ferroelectric materials are analyzed, and future perspective in resolving these issues is discussed. PMID:25814784

  7. Losses in Ferroelectric Materials.

    Science.gov (United States)

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-03-01

    loss mechanisms are discussed in terms of compositions, crystal structures, temperature, domain configurations, domain sizes and grain boundaries. The intrinsic and extrinsic contributions to the total energy dissipation are quantified. In domain engineered ferroelectric single crystals and ceramics, polarization rotations, domain wall motions and mechanical wave scatterings at grain boundaries are believed to control the mechanical quality factors of piezoelectric resonators. We show that a thorough understanding on the kinetic processes is critical in analyzing energy loss behavior and other time-dependent properties in ferroelectric materials. At the end of the review, existing challenges in the study and control of losses in ferroelectric materials are analyzed, and future perspective in resolving these issues is discussed.

  8. Dry etching of ferroelectric Bi4-xEuxTi3O12 (BET) thin films

    International Nuclear Information System (INIS)

    Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

    2004-01-01

    Bi 4-x Eu x Ti 3 O 12 (BET) thin films were etched by using a inductively coupled Cl 2 /Ar plasma. We obtained a maximum etch rate of 69 nm/min at a gas mixing ratio of Cl 2 (20 %)/Ar (80 %). This result suggests that an effective method for BET etching is chemically assisted physical etching. With increasing coil RF power, the plasma density increases so that the increased reactive free radicals and ions enhance the etch rates of BET, Pt, and SiO 2 . As the dc-bias voltage is increased, the increased ion energy leads to an increased etch rate of BET films. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O, and the Ti-O peaks change with increasing Cl 2 concentration. For a pure Ar plasma, the peak associated with the oxygen-metal (O-M: TiO 2 , Bi 2 O 3 , Eu 2 O 3 ) bond seems to disappear while the pure oxygen peak does not appear. After the BET thin films is etched by using a Cl 2 /Ar plasma, the peak associated with the O-M bond increases slowly, but more quickly than the peak associated with pure oxygen atoms, due to a decrease in the Ar-ion bombardment. These results seem to indicate that Bi and Eu react little with Cl atoms and are removed predominantly by argon-ion bombardment. Also, Ti reacts little with Cl radicals and is mainly removed by chemically assisted physical etching.

  9. Room-Temperature Voltage Tunable Phonon Thermal Conductivity via Reconfigurable Interfaces in Ferroelectric Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Ihlefeld, Jon F. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Foley, Brian M. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering; Scrymgeour, David A. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Michael, Joseph R. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); McKenzie, Bonnie B. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Medlin, Douglas L. [Sandia National Laboratories, Livermore, CA; Wallace, Margeaux [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Trolier-McKinstry, Susan [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Hopkins, Patrick E. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering

    2015-02-19

    Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. Here, we demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

  10. Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films.

    Science.gov (United States)

    Ihlefeld, Jon F; Foley, Brian M; Scrymgeour, David A; Michael, Joseph R; McKenzie, Bonnie B; Medlin, Douglas L; Wallace, Margeaux; Trolier-McKinstry, Susan; Hopkins, Patrick E

    2015-03-11

    Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. We demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

  11. Texture control and seeded nucleation of nanosize structures of ferroelectric thin films

    Science.gov (United States)

    Muralt, Paul

    2006-09-01

    An overview is given on nucleation phenomena of Pb(Zr ,Ti)O3 (PZT) thin films on Pt(111)-based substrates. Emphasis is given on in situ growth methods, particularly in situ reactive sputtering from three metallic targets. Growth of PZT thin films is discussed from the point of view of the PbOx-TiO2 phase diagram, PbO vapor pressure, and classical nucleation theory. The role of thin TiO2 affinity layers and spots is explained in the frame of this theory. Activation energies for desorption and chemisorption are adapted to comply with the fact that nucleation rates on TiO2 are much larger than the ones on bare Pt(111). The model reproduces well the PbO surface flux from bare Pt(111) to the affinity spots in the case of PbTiO3 nucleation and the reversed tendency in the case of PZT 40/60 nucleation, explaining experimental observations. The critical size of nuclei was calculated to contain 8-10unit cells for PbTiO3/Pt nucleation and 14-17 for PZT/Pt nucleation.

  12. Fatigue in artificially layered Pb(Zr,Ti)O3 ferroelectric films

    Science.gov (United States)

    Jiang, A. Q.; Scott, J. F.; Dawber, M.; Wang, C.

    2002-12-01

    We have performed fatigue tests on lead zirconate titanate (PZT) multilayers having stacks of Pb(Zr0.8Ti0.2)O3/Pb(Zr0.2Ti0.8)O3 with repeated distances of 12 formula groups. The results are compared with single-layer n-type (0.5 at. % Ta-doped) PZT films. We conclude that fatigue is dominated by space-charge layers in each case, but that in the multilayer such space charge accumulates at the layer interfaces, rather than at the electrode-dielectric interface. The model, which includes both drift and diffusion, is quantitative and yields a rate-limiting mobility of 6.9±0.9×10-12 cm2/V s, in excellent agreement with the oxygen vacancy mobility for perovskite oxides obtained from Zafar et al.

  13. Peculiarities in film growth of ferroelectric complex oxides in ion-plasma sputtering

    International Nuclear Information System (INIS)

    Mukhortov, V.M.; Golovko, Yu.I.; Mukhortov, Vl.M.; Dudkevich, V.P.

    1981-01-01

    Experimental investigation into the process of complex oxide film growth (using BaTiO 3 and (Ba,Sr)TiO 3 as an example) during ion-plasma sputtering has been carried out. It is shown that neutral excited atoms are knocked out of a ceramic target during its ion bombardment. Removing from the target they loss energy at the expence of collisions and at some distance hsub(cr) the oxidation reaction (BaO, TiO, TiO 2 , SrO) becomes possible. So the ''construction'' material comes in either in the form of atoms or in the form of molecules of simple oxides depending on a distance between cathode and substrate. Two mechanisms of synthesis and crystallization distinguished with dependences of growth rate, elementary cell parameters and other structure characteristics on precipitation temperature correspond to two precipitation mechanisms. Part of re-evaporation and reduction processes is discussed [ru

  14. Transparent non-linear optical composites based on glass and ferroelectric KNbSi.sub.2./sub.O.sub.7./sub..

    Czech Academy of Sciences Publication Activity Database

    Sigaev, V. N.; Sukhov, S.S.; Sarkisov, P. D.; Stefanovich, S. Yu.; Pernice, P.; Aronne, A.; Gregora, Ivan

    2005-01-01

    Roč. 318, - (2005), s. 95-104 ISSN 0015-0193 Grant - others:Russian Fondation of Basic Research(RU) 02-03-32105; NATO SfP program(XX) SfP-977980; Italien Ministry of Education , Univerity and Research, FIRB(IT) RBNE0155X7 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferroelectric * glass composites * optical non-linearity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.459, year: 2005

  15. Photoinduced effects of ferroelectric domains in PbZr1-xTixO3 thin films as obtained by using piezoresponse force microscopy

    International Nuclear Information System (INIS)

    Jang, Y. H.; Kim, C. H.; Hwang, H. J.; Cho, J. H.; Moon, H. B.; Bhang, S. H.

    2011-01-01

    Piezoresponse force microscopy (PFM) has been used to investigate the photoinduced effect of ferroelectric domains in PbZr 1-x Ti x O 3 (PZT) thin films. In order to perform nondestructive visualization of the high-resolution domain structure, we optimized the imaging condition, such as applying a lower voltage than 1.0 Vpp (peak-to-peak voltage). In this study, domain changes were measured before and after illumination on the surface of PZT films by using an UV light emitting diode (LED) source (λ = 310 nm) with a focusing lens to investigate the influence of the photoinduced carriers on the ferroelectric polarization. In addition, to investigate the photoinduced effects on the domain distribution, we performed histogram of positive and negative domains before and after UV-light illumination. The illumination with UV light resulted in an increase of the positive domain of the out-of-plane mode. Also, a change in the out-of-plane domain distribution was observed before and after UV illumination. The relaxation of photoinduced changes was monitored by repeated scans within a time range of 20 ∼ 60 minutes.

  16. Effects of annealing schedule on orientation of Bi3.2Nd0.8Ti3O12 ferroelectric film prepared by chemical solution deposition process

    International Nuclear Information System (INIS)

    He, H.Y.; Huang, J.F.; Cao, L.Y.; Wang, L.S.

    2006-01-01

    Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented films with degree of orientation of I (200) /I (117) = 2.097 and 0.466 were obtained by preannealing for 10 min at 400 deg. C followed by rapid thermal annealing for 3, 10 and 20 min at 700 deg. C, respectively (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 1.706 were obtained by rapid thermal annealing for 3 min at 700 deg. C without preannealing, and (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 0.719 were obtained by preheating the film from room temperature at 20 deg. C/min followed by annealing for 10 min at 700 deg. C. The a-axis and c-axis orientation decreased as increase of annealing time due to effects of (1 1 1)-oriented substrate. AFM analysis further indicated that preannealing at 400 deg. C for 10 min followed by rapid thermal annealing for 3 min at 700 deg. C resulted in formation of platelike crystallite parallel to substrate surface, however rapid thermal annealing for 3 min at 700 deg. C without preannealing resulted in columnar crystallite perpendicular to substrate surface

  17. Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

    Science.gov (United States)

    Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

    2016-11-21

    The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

  18. Characteristics of growth of complex ferroelectric oxide films by plasma-ion sputtering

    Science.gov (United States)

    Mukhortov, V. M.; Golovko, Yu. I.; Mukhortov, Vl. M.; Dudkevich, V. P.

    1981-02-01

    An experimental investigation was made of the process of growth of a complex oxide film, such as BaTiO3 or (Ba, Sr)TiO3, by plasma-ion sputtering. It was found that ion bombardment of a ceramic target knocked out neutral excited atoms. These atoms lost energy away from the target by collisions and at a certain critical distance hcr they were capable of oxidation to produce BaO, TiO, TiO2, and SrO. Therefore, depending on the distance between the cathode and the substrate, the “construction” material arrived in the form of atoms or molecules of simple oxides. These two (atomic and molecular) deposition mechanisms corresponded to two mechanisms of synthesis and crystallization differing in respect of the dependences of the growth rate, unit cell parameters, and other structural properties on the deposition temperature. The role of re-evaporation and of oxidation-reduction processes was analyzed.

  19. Ferroelectric devices

    CERN Document Server

    Uchino, Kenji

    2009-01-01

    Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments-and setbacks-in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development.Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulat

  20. Damage-free patterning of ferroelectric lead zirconate titanate thin films for microelectromechanical systems via contact printing

    Science.gov (United States)

    Welsh, Aaron

    This thesis describes the utilization and optimization of the soft lithographic technique, microcontact printing, to additively pattern ferroelectric lead zirconate titanate (PZT) thin films for application in microelectromechanical systems (MEMS). For this purpose, the solution wetting, pattern transfer, printing dynamics, stamp/substrate configurations, and processing damages were optimized for incorporation of PZT thin films into a bio-mass sensor application. This patterning technique transfers liquid ceramic precursors onto a device stack in a desired configuration either through pattern definition in the stamp, substrate or both surfaces. It was determined that for ideal transfer of the pattern from the stamp to the substrate surface, wetting between the solution and the printing surface is paramount. To this end, polyurethane-based stamp surfaces were shown to be wet uniformly by polar solutions. Patterned stamp surfaces revealed that printing from raised features onto flat substrates could be accomplished with a minimum feature size of 5 mum. Films patterned by printing as a function of thickness (0.1 to 1 mum) showed analogous functional properties to continuous films that were not patterned. Specifically, 1 mum thick PZT printed features had a relative permittivity of 1050 +/- 10 and a loss tangent of 2.0 +/- 0.4 % at 10 kHz; remanent polarization was 30 +/- 0.4 muC/cm 2 and the coercive field was 45 +/- 1 kV/cm; and a piezoelectric coefficient e31,f of -7 +/- 0.4 C/m2. No pinching in the minor hysteresis loops or splitting of the first order reversal curve (FORC) distributions was observed. Non-uniform distribution of the solution over the printed area becomes more problematic as feature size is decreased. This resulted in solutions printed from 5 mum wide raised features exhibiting a parabolic shape with sidewall angles of ˜ 1 degree. As an alternative, printing solutions from recesses in the stamp surface resulted in more uniform solution thickness

  1. Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

    KAUST Repository

    Altynnikov, A. G.; Gagarin, A. G.; Gaidukov, M. M.; Tumarkin, A. V.; Petrov, P. K.; Alford, N.; Kozyrev, A. B.

    2014-01-01

    The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally

  2. Optical properties of ferroelectric epitaxial K.sub.0.5./sub.Na.sub.0.5./sub.NbO.sub.3./sub. films in visible to ultraviolet range

    Czech Academy of Sciences Publication Activity Database

    Chernova, Ekaterina; Pacherová, Oliva; Kocourek, Tomáš; Jelínek, Miroslav; Dejneka, Alexandr; Tyunina, Marina

    2016-01-01

    Roč. 11, č. 4 (2016), 1-9, č. článku e0153261. E-ISSN 1932-6203 R&D Projects: GA ČR GA15-13778S Institutional support: RVO:68378271 Keywords : optical properties * ferroelectric * epitaxial films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.806, year: 2016

  3. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    International Nuclear Information System (INIS)

    Dai, X.H.; Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z.; Ma, L.X.; Zhao, H.D.; Liu, B.T.

    2015-01-01

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La 0.5 Sr 0.5 CoO 3 /PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm 2 , small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories

  4. Preparation and Characterization of Chitosan—Agarose Composite Films

    Directory of Open Access Journals (Sweden)

    Zhang Hu

    2016-09-01

    Full Text Available Nowadays, there is a growing interest to develop biodegradable functional composite materials for food packaging and biomedicine applications from renewable sources. Some composite films were prepared by the casting method using chitosan (CS and agarose (AG in different mass ratios. The composite films were analyzed for physical-chemical-mechanical properties including tensile strength (TS, elongation-at-break (EB, water vapor transmission rate (WVTR, swelling ratio, Fourier-transform infrared spectroscopy, and morphology observations. The antibacterial properties of the composite films were also evaluated. The obtained results reveal that an addition of AG in varied proportions to a CS solution leads to an enhancement of the composite film’s tensile strength, elongation-at-break, and water vapor transmission rate. The composite film with an agarose mass concentration of 60% was of the highest water uptake capacity. These improvements can be explained by the chemical structures of the new composite films, which contain hydrogen bonding interactions between the chitosan and agarose as shown by Fourier-transform infrared spectroscopy (FTIR analysis and the micro-pore structures as observed with optical microscopes and scanning electron microscopy (SEM. The antibacterial results demonstrated that the films with agarose mass concentrations ranging from 0% to 60% possessed antibacterial properties. These results indicate that these composite films, especially the composite film with an agarose mass concentration of 60%, exhibit excellent potential to be used in food packaging and biomedical materials.

  5. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures (Postprint)

    Science.gov (United States)

    2016-09-01

    deformation potentially leads to fatigue and fracture over time. Moreover, we show that by simply applying voltage pulses, a robust, non-volatile...polarization such as PZT , BiFeO3, or doped HfO2. Our results thus provide a pathway towards ferroelectric switching of magnetism that could be useful for

  6. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    International Nuclear Information System (INIS)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-01-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm"2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  7. Ferroelectricity in undoped hafnium oxide

    International Nuclear Information System (INIS)

    Polakowski, Patrick; Müller, Johannes

    2015-01-01

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

  8. Structure-Function Relationships of Ferroelectric Polymers.

    Science.gov (United States)

    Pavlopoulou, Eleni; Maiz, Jon; Spampinato, Nicoletta; Maglione, Mario; Hadziioannou, Georges

    Poly(vinylidene fluoride), PVDF, and its copolymers with trifluoroethylene, P(VDF-co-TrFE) have been long appreciated for their excellent ferroelectric properties. Although they have been mainly studied in the 80s and 90s, understanding their performance is still lacking. Yet the increasing use of P(VDF-co-TrFE) thin films in organic electronic devices during the last ten years revives the need for apprehending the function of these materials. In this work we investigate the structure of P(VDF-co-TrFE) films and correlate it to their ferroelectric properties. Our results show that ferroelectric performance is solely driven by the fraction of polymer that has been crystallized in the ferroelectric phases of PVDF. The relations between remnant polarization, coercive field and dipole switching rate of P(VDF-co-TrFE) with the ferroelectric crystallinity are demonstrated. The French Research Agency (ANR), the Aquitaine Region, Arkema and STMicroelectronics are kindly acknowledged for financial support.

  9. Ferroelectric properties of BaTiO3/PbZr0.2Ti.08O3 bilayer thin film

    Science.gov (United States)

    Salev, Pavel; Yang, Chun; Grigoriev, Alexei

    2014-03-01

    The thin film ferroelectric BaTiO3/PbZr0.2Ti0.8O3 bilayer was epitaxially grown on SrRuO3/SrTiO3 substrate by RF sputtering. Electrical measurements of polarization switching revealed two different switching regimes - a small ferroelectric hysteresis loop at low applied voltage and a larger loop at a high voltage. The measured dielectric permittivity corresponds to weak electrostatic coupling between two layers according to Landau-Ginsburg-Devonshire theory. This weak coupling may allow for independent polarization states to exist in individual layers. This can lead to stable head-to-head and tail-to-tail polarization domain configurations, which would explain the two switching regimes observed in electrical measurements. The compensation of polarization gradient across the interface can be explained by the enhancement of interface charge carrier density due to strong bending of electron energy bands. This work was supported by NSF award DMR-1057159.

  10. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO{sub 3}-buffered ferroelectric BaTiO{sub 3} film on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Qiao [Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States); Materials Science and Technology Department, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Zhang, Yuyang [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States); Materials Science and Technology Department, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Contreras-Guerrero, Rocio; Droopad, Ravi [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States); Pantelides, Sokrates T. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37240 (United States); Materials Science and Technology Department, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37240 (United States); Pennycook, Stephen J. [Department of Materials Science and Engineering, National University of Singapore, Singapore 117575 (Singapore); Ogut, Serdar; Klie, Robert F. [Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

    2015-11-16

    The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO{sub 3} thin films grown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO{sub 3} grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. Here, we use a combination of aberration-corrected scanning transmission electron microscopy and first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectric polarization of a BaTiO{sub 3} thin film grown on GaAs. We demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO{sub 3}), and propose that the presence of surface charge screening allows the formation of switchable domains.

  11. Interface strain coupling and its impact on the transport and magnetic properties of LaMnO3 thin films grown on ferroelectrically active substrates

    International Nuclear Information System (INIS)

    Zheng, R.K.; Wang, Y.; Habermeier, H.-U.; Chan, H.L.W.; Li, X.M.; Luo, H.S.

    2012-01-01

    Highlights: ► Strong interface strain coupling in LaMnO 3 /PMN-PT heterostructure. ► In situ dynamic turning of the strain and lattice distortion of LaMnO 3 films. ► Coupling of electrons to lattice strain is crucial to understand the strain effect. - Abstract: Thin films of LaMnO 3 have been epitaxially grown on 〈0 0 1〉 oriented ferroelectric 0.67Pb(Mg 1/3 Nb 2/3 )O 3 -0.33PbTiO 3 (PMN-PT) single-crystal substrates. The poling of the PMN-PT crystal causes a decrease in the resistance and an increase in the magnetization and magnetoresistance of the LaMnO 3 film. In situ X-ray diffraction measurements revealed that these changes arise from the poling-induced strain in the PMN-PT substrate, which reduces the in-plane tensile strain and the Jahn–Teller (JT) distortion of MnO 6 octahedra of the LaMnO 3 film. Moreover, it was found that the transport properties of LaMnO 3 films are much more sensitive to the poling-induced strain than that of CaMnO 3 films for which there is no JT distortion, implying that the electron–lattice coupling is one of the most important ingredients in understanding the strain effect in LaMnO 3 films.

  12. Integration and electrical properties of epitaxial LiNbO{sub 3} ferroelectric film on n-type GaN semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Hao Lanzhong, E-mail: hao_lanzhong@live.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Zhu Jun, E-mail: junzhu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu Yunjie [Faculty of Science, China University of Petroleum, Tsingtao, Shandong 266555 (China); Wang Shuili; Zeng Huizhong; Liao Xiuwei; Liu Yingying; Lei Huawei; Zhang Ying; Zhang Wanli; Li Yanrong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2012-01-31

    LiNbO{sub 3} (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser deposition technique. The microstructures and electrical properties of the LNO/GaN heterostructure were characterized by x-ray diffraction, transmission electron microscope, and capacitance-voltage (C-V) measurements. The LNO films had two variants of grains rotated 60 Degree-Sign in-plane to each other. The epitaxial relationship of the respective variants could be built as [10-10]LNO//[1-210]GaN and [1-100]LNO//[11-20]GaN via 30 Degree-Sign in-plane rotation of the LNO film relative to the GaN layer. Interface analysis of the heterostructure demonstrated that two different epitaxial growth mechanisms vertical heteroepitaxy and lateral homoepitaxy, should happen at the interface of LNO/GaN. Counterclockwise C-V windows induced by the ferroelectric polarizations of LNO film could be observed clearly. The size of the window increased with increasing the sweep bias and a large window of 5.8 V was achieved at {+-} 15 V. By solving Poisson and drift-diffusion equations, the physical mechanisms of the C-V characteristics were demonstrated.

  13. Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vu, Hien Thu [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Houwman, Evert; Boota, Muhammad [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Dekkers, Matthijn [SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede (Netherlands); Vu, Hung Ngoc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000 (Viet Nam); Rijnders, Guus [Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-12-15

    Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectric properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between

  14. Optical study on doped polyaniline composite films

    International Nuclear Information System (INIS)

    Li, G; Zheng, P; Wang, N L; Long, Y Z; Chen, Z J; Li, J C; Wan, M X

    2004-01-01

    Localization driven by disorder has a strong influence on the conducting properties of conducting polymers. Some authors hold the opinion that disorder in the material is homogeneous and that the conducting polymer is a disordered metal close to the Anderson-Mott metal-insulator (MI) transition, while others treat the disorder as inhomogeneous and have the opinion that conducting polymers are a composite of ordered metallic regions and disordered insulating regions. The morphology of conducting polymers is an important factor that has an influence on the type and extent of disorder. Different protonic acids used as dopants and moisture have influence on the polymer chain arrangement and interchain interactions. We performed optical reflectance measurements on several PANI-CSA/PANI-DBSA composite films with different dopant ratios and moisture contents. Optical conductivity and the real part of the dielectric function are calculated by Kramers-Kronig (KK) relations. σ 1 (ο) and ε 1 (ο) deviate from the simple Drude model in the low frequency range and the tendencies of the three sample are different and non-monotonic. The localization modified Drude model (LMD) in the framework of the Anderson-Mott theory cannot give a good fit to the experimental data. By introducing the distribution of relaxation time into the LMD, reasonable fits for all three samples are obtained. This result supports the inhomogeneous picture

  15. Ferroelectric capacitor with reduced imprint

    Science.gov (United States)

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  16. Effects on Ferroelectric Thin-Film Stacks and Devices for Piezoelectric MEMS Applications at Varied Total Ionizing Dose (TID)

    Science.gov (United States)

    2017-03-01

    non -linearly mobile internal interfaces, e.g. domain walls and eventual phase boundaries. Radiation exposure is expected...zirconate titanate; PZT; actuator; radiation ; gamma; total ionization dose; TID; top electrode; Pt; IrO2; polarization; PE; hysteresis; permittivity...Hayashigawa, et. al., “A 2 Mbit Radiation Hardened Stackable Ferroelectric Memory” Non - Volatile Memory Technology Symposium, NVMTS 07, Nov 10-13, 2007 Albuquerque, NM, USA

  17. Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

    KAUST Repository

    Yao, Yingbang

    2014-02-01

    Multiferroic BiFeO3-(K0.5Na0.5) 0.4(Sr0.6Ba0.4)0.8Nb 2O6 (BFO-KNSBN) trilayer thin films, were epitaxially grown on MgO(0 0 1) and SrTiO3(0 0 1) by using pulsed laser deposition (PLD). Their ferroelectric, magnetic, dielectric and optical properties were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis magnetic loop was observed in the KNSBN-BFO-KNSBN trilayer films, where exchange bias and secondary phase in the BFO layer played crucial roles. Interactions between adjacent layers were revealed by temperature-dependent Raman spectroscopic measurements. © 2013 Elsevier B.V. All rights reserved.

  18. Strongly nonlinear electronic transport in Cr-Si composite films

    International Nuclear Information System (INIS)

    Burkov, A.T.; Vinzelberg, H.; Schumann, J.; Nakama, T.; Yagasaki, K.

    2004-01-01

    The phase formation, the resistivity and the thermopower of amorphous Cr 0.15 Si 0.85 , and nanocrystalline CrSi 2 -Si thin film composites have been studied. The films were produced by a magnetron sputtering of a composite target onto unheated substrates with subsequent crystallization of the film at high temperatures. As the film composite develops under the heat treatment from the initial amorphous state into the final polycrystalline material, two percolation thresholds were found. At first, the percolating cluster of nanocrystalline CrSi 2 is formed. However, this cluster is destroyed with further annealing due to crystallization and redistribution of Si. The composite films which are close to this insulating threshold reveal a strongly nonlinear conductivity. The conductivity increases with the current by two orders of magnitude

  19. Supercapacitors based on flexible graphene/polyaniline nanofiber composite films.

    Science.gov (United States)

    Wu, Qiong; Xu, Yuxi; Yao, Zhiyi; Liu, Anran; Shi, Gaoquan

    2010-04-27

    Composite films of chemically converted graphene (CCG) and polyaniline nanofibers (PANI-NFs) were prepared by vacuum filtration the mixed dispersions of both components. The composite film has a layered structure, and PANI-NFs are sandwiched between CCG layers. Furthermore, it is mechanically stable and has a high flexibility; thus, it can be bent into large angles or be shaped into various desired structures. The conductivity of the composite film containing 44% CCG (5.5 x 10(2) S m(-1)) is about 10 times that of a PANI-NF film. Supercapacitor devices based on this conductive flexible composite film showed large electrochemical capacitance (210 F g(-1)) at a discharge rate of 0.3 A g(-1). They also exhibited greatly improved electrochemical stability and rate performances.

  20. Surface Acoustic Waves in ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Tarasenko A., Nataliya; Jastrabík, Lubomír; Tarasenko, Alexander

    2004-01-01

    Roč. 298, - (2004), s. 325-333 ISSN 0015-0193 R&D Projects: GA AV ČR IBS1010203 Keywords : Rayleigh waves * ferroelectric films * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

  1. Interfaces study of all-polysaccharide composite films

    Czech Academy of Sciences Publication Activity Database

    Šimkovic, I.; Kelnar, Ivan; Mendichi, R.; Tracz, A.; Filip, J.; Bertók, T.; Kasák, P.

    2018-01-01

    Roč. 72, č. 3 (2018), s. 711-718 ISSN 0366-6352 Institutional support: RVO:61389013 Keywords : all-polysaccharide composites * elemental analysis * film properties study Subject RIV: JI - Composite Materials OBOR OECD: Composites (including laminates, reinforced plastics, cermets, combined natural and synthetic fibre fabrics Impact factor: 1.258, year: 2016

  2. Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

    Science.gov (United States)

    Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

    2014-12-24

    The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

  3. Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

    International Nuclear Information System (INIS)

    Guo Yiping; Guo Bing; Dong Wen; Li Hua; Liu Hezhou

    2013-01-01

    The diode and photovoltaic effects of BiFeO 3 and Bi 0.9 Sr 0.1 FeO 3−δ polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi 0.9 Sr 0.1 FeO 3−δ thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO 3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities. (paper)

  4. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    Energy Technology Data Exchange (ETDEWEB)

    Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

    2015-10-05

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

  5. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

    2010-01-01

    obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed

  6. Photoelectron spectroscopic and microspectroscopic probes of ferroelectrics

    Science.gov (United States)

    Tǎnase, Liviu C.; Abramiuc, Laura E.; Teodorescu, Cristian M.

    2017-12-01

    This contribution is a review of recent aspects connected with photoelectron spectroscopy of free ferroelectric surfaces, metals interfaced with these surfaces, graphene-like layers together with some exemplifications concerning molecular adsorption, dissociations and desorptions occurring from ferroelectrics. Standard photoelectron spectroscopy is used nowadays in correlation with other characterization techniques, such as piezoresponse force microscopy, high resolution transmission electron spectroscopy, and ferroelectric hysteresis cycles. In this work we will concentrate mainly on photoelectron spectroscopy and spectro-microscopy characterization of ferroelectric thin films, starting from atomically clean ferroelectric surfaces of lead zirco-titanate, then going towards heterostructures using this material in combination with graphene-like carbon layers or with metals. Concepts involving charge accumulation and depolarization near surface will be revisited by taking into account the newest findings in this area.

  7. Structural and magneto-dielectric property of (1-x)SBT-xLSMO nanocomposite thin films

    International Nuclear Information System (INIS)

    Maity, Sarmistha; Bhattacharya, D.; Dhar, A.; Ray, S.K.

    2009-01-01

    Full text: In recent years, interest in multiferroic materials has been increasing due to their potential applications. As single-phase multiferroic materials have very low room temperature magnetoelectric coefficient, recent studies have been concentrated on the possibility of attaining a coupling between the two order parameters by designing composites with magnetostrictive and piezoelectric phases via stress mediation. Composite thin films with homogenous matrix, composition spread with terminal layers being ferromagnetic and ferroelectric, layer-by-layer growth, superlattices, as well as epitaxial growth of ferromagnetic and ferroelectric layers on suitable substrates are been currently considered. In the present work, a nanostructured composite thin film of strontium bismuth tantalate (SBT) (ferroelectric layer) and lanthanum strontium manganese oxide (LSMO) (ferromagnetic layer) were fabricated using pulsed laser deposition. Phase separated multiferroic thin films with thickness varying from 50nm to 150nm were deposited from composite target (1-x)SBT-xLSMO with x=0.2, 0.5, 0.8. Grazing angle X-ray diffraction study combined with photo electron spectroscopy with depth profiling was carried out to study the phase separation. Interface quality of the thin film on silicon substrate was studied by Rutherford backscattering spectroscopy. Influence of film thickness and composition (x) on the electrical property of film was examined using impedance spectroscopy. The composite films exhibited ferroelectric as well as ferromagnetic characteristics at room temperature. A small kink in the dielectric spectra near the Neel temperature of LSMO confirmed the magneto-electric effect in the nanocomposite films

  8. Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

    Science.gov (United States)

    Bouregba, R.; Sama, N.; Soyer, C.; Poullain, G.; Remiens, D.

    2010-05-01

    Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to study of size effect by R. Bouregba et al., [J. Appl. Phys. 106, 044101 (2009)]. Deterioration of the ferroelectric properties, consecutive to fatigue cycling and thickness downscaling, presents very similar characteristics and allows drawing up a direct correlation between the two phenomena. Namely, interface depolarization field (Edep) resulting from interface chemistry is found to be the common denominator, fatigue phenomena is manifestation of strengthen of Edep in the course of time. Change in dielectric permittivity, in remnant and coercive values as well as in the shape of hysteresis loops are mediated by competition between degradation of dielectric properties of the interfaces and possible accumulation of interface space charge. It is proposed that presence in the band gap of trap energy levels with large time constant due to defects in small nonferroelectric regions at the electrode—PZT film interfaces ultimately governs the aging process. Size effect and aging process may be seen as two facets of the same underlying mechanism, the only difference lies in the observation time of the phenomena.

  9. Thin composite films consisting of polypyrrole and polyparaphenylene

    International Nuclear Information System (INIS)

    Golovtsov, I.; Bereznev, S.; Traksmaa, R.; Opik, A.

    2007-01-01

    This study demonstrates that the combined method for the formation of thin composite films, consisting of polypyrrole (PPy) as a film forming agent and polyparaphenylene (PPP) with controlled electrical properties and high stability, enables one to avoid the low processability of PPP and to extend the possibilities for the development of electronic devices. The high temperature (250-600 deg. C) doping method was used for PPP preparation. The crystallinity and grindability of PPP was found to be increasing with the thermochemical modification. Thin composite films were prepared onto the light transparent substrates using the simple electropolymerization technique. The properties of films were characterized by the optical transmittance and temperature-dependent conductivity measurements. The morphology and thickness of the prepared films were determined using the scanning electron microscopy. The composite films showed a better adhesion to an inorganic substrate. It was found to be connected mostly with the improved properties of the high temperature doped PPP. The current-voltage characteristics of indium tin oxide/film/Au hybrid organic-inorganic structures showed the influence of the doping conditions of PPP inclusions in the obtained films

  10. Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

    Science.gov (United States)

    Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

    2006-09-15

    We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

  11. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Daranciang, Dan

    2012-02-15

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  12. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    International Nuclear Information System (INIS)

    Daranciang, Dan

    2012-01-01

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  13. Low temperature formation of ferroelectric PbTiO3 films by laser ablation with 2nd laser irradiation; Reiki hikari laser heiyo laser ablation ho ni yoru kyoyudentai PbTiO3 usumaku no teion keisei

    Energy Technology Data Exchange (ETDEWEB)

    Tabata, H.; Kawai, T. [Osaka University, Osaka (Japan)

    1997-08-20

    The unique advantage of the pulsed laser deposition is its ability to produce highly oriented stoichiometric films at a low substrate temperature. Ferroelectric PbTiO3 thin films have been formed using 2nd laser assisted laser ablaion technique at low temperature, i.e., 350degC, on Sr7iO3 single-crystal substrates and Pt/MgO electrodes. The second laser irradiation at the substrate surface is quite effective for crystallization of the films at low substrate temperature below 400degC. The suitable energy density (fluence) of the irradiation laser is in the range of 30-100 mJ/cm{sup 2}. X-ray diffraction patterns of PbTiO3 thin films show c-axis orientation, with a rocking angle of 1.0 - 0.5deg. These films exhibit ferroelectric hysteresis loop. The dielectric constant and remanent polalyzation of the PbTiO3 films are in the range of 120-150 and 60-80 {mu}C/cm{sup 2}, respectively. 31 refs., 10 figs., 1 tab.

  14. Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

    Science.gov (United States)

    Wouters, D. J.; Maes, D.; Goux, L.; Lisoni, J. G.; Paraschiv, V.; Johnson, J. A.; Schwitters, M.; Everaert, J.-L.; Boullart, W.; Schaekers, M.; Willegems, M.; Vander Meeren, H.; Haspeslagh, L.; Artoni, C.; Caputa, C.; Casella, P.; Corallo, G.; Russo, G.; Zambrano, R.; Monchoix, H.; Vecchio, G.; Van Autryve, L.

    2006-09-01

    Ferroelectric random access memory (FeRAM) is an attractive candidate technology for embedded nonvolatile memory, especially in applications where low power and high program speed are important. Market introduction of high-density FeRAM is, however, lagging behind standard complementary metal-oxide semiconductor (CMOS) because of the difficult integration technology. This paper discusses the major integration issues for high-density FeRAM, based on SrBi2Ta2O9 (strontium bismuth tantalate or SBT), in relation to the fabrication of our stacked cell structure. We have worked in the previous years on the development of SBT-FeRAM integration technology, based on a so-called pseudo-three-dimensional (3D) cell, with a capacitor that can be scaled from quasi two-dimensional towards a true three-dimensional capacitor where the sidewalls will importantly contribute to the signal. In the first phase of our integration development, we integrated our FeRAM cell in a 0.35μm CMOS technology. In a second phase, then, possibility of scaling of our cell is demonstrated in 0.18μm technology. The excellent electrical and reliability properties of the small integrated ferroelectric capacitors prove the feasibility of the technology, while the verification of the potential 3D effect confirms the basic scaling potential of our concept beyond that of the single-mask capacitor. The paper outlines the different material and technological challenges, and working solutions are demonstrated. While some issues are specific to our own cell, many are applicable to different stacked FeRAM cell concepts, or will become more general concerns when more developments are moving into 3D structures.

  15. Percolation in the dielectric function of Pb(Zr,Ti)O.sub.3./sub. - Pb.sub.2./sub.Ru.sub.2./sub.O.sub.6.5./sub. ferroelectric - metal composites

    Czech Academy of Sciences Publication Activity Database

    Nuzhnyy, Dmitry; Buixaderas, Elena; Rychetský, Ivan; Kadlec, Christelle; Petzelt, Jan; Uršič, H.; Malič, B.

    2014-01-01

    Roč. 47, č. 49 (2014), "495301-1"-"495301-6" ISSN 0022-3727 R&D Projects: GA ČR GAP204/12/0232 Institutional support: RVO:68378271 Keywords : effective medium * infrared and terahertz spectroscopy * electrical percolation * ferroelectric - metal composite Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.721, year: 2014

  16. Electrode contacts on ferroelectric Pb(Zr x Ti1−x )O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties

    OpenAIRE

    Lee, J. J.; Thio, C. L.; Desu, Seshu B.

    1995-01-01

    The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1-x)O-3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low-fiel...

  17. Thermal analysis of compositionally modulated Fe/Y films

    International Nuclear Information System (INIS)

    Kajiura, M.; Morishita, T.; Togami, Y.; Tsushima, K.

    1987-01-01

    Structures of compositionally modulated Fe/Y films were studied by thermal analysis. The exothermic peak found in the DSC curve of (Fe 12 A/Y 12 A) most probably corresponds to crystallization of an amorphous material. SEM analysis suggested that the composition of crystallized (Fe 12 A/Y 12 A) was YFe2. It is concluded that a compositionally modulated (Fe 12 A/Y 12 A) is amorphous in structure as well as in magnetic properties

  18. Synthesis and characterization of silver-polypyrrole film composite

    Energy Technology Data Exchange (ETDEWEB)

    Ayad, Mohamad M., E-mail: mayad12000@yahoo.com [Department of Chemistry, Faculty of Science, University of Tanta, Tanta (Egypt); Zaki, Eman [Department of Chemistry, Faculty of Science, University of Tanta, Tanta (Egypt)

    2009-11-15

    In this work, we report the chemical polymerization of pyrrole to obtain thin film of polypyrrole (PPy) hydrochloride deposited onto the electrode of the quartz crystal microbalance (QCM). The film in the base form was exposed to a solution of AgNO{sub 3}. Electroless reduction for silver ions by the PPy film took place and silver particles were adsorbed onto the film surface. The silver particles content at the PPy films were analyzed by QCM and the results showed that the concentrations of silver uptakes increase as the original AgNO{sub 3} solution increases. The morphology of the surface of the PPy film and the silver-PPy film composite were studied by the scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectrometry (EDX). They showed that the obtained silver particles have spherical, cubic and tetrahedral structures. X-ray diffraction (XRD) and Fourier transformed infra-red spectroscopy (FTIR) were used to characterize the structure of the powder composite. This work reveals the capability of PPy film coating on QCM in sensing and removing silver from several environmental samples.

  19. Synthesis and characterization of silver-polypyrrole film composite

    International Nuclear Information System (INIS)

    Ayad, Mohamad M.; Zaki, Eman

    2009-01-01

    In this work, we report the chemical polymerization of pyrrole to obtain thin film of polypyrrole (PPy) hydrochloride deposited onto the electrode of the quartz crystal microbalance (QCM). The film in the base form was exposed to a solution of AgNO 3 . Electroless reduction for silver ions by the PPy film took place and silver particles were adsorbed onto the film surface. The silver particles content at the PPy films were analyzed by QCM and the results showed that the concentrations of silver uptakes increase as the original AgNO 3 solution increases. The morphology of the surface of the PPy film and the silver-PPy film composite were studied by the scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectrometry (EDX). They showed that the obtained silver particles have spherical, cubic and tetrahedral structures. X-ray diffraction (XRD) and Fourier transformed infra-red spectroscopy (FTIR) were used to characterize the structure of the powder composite. This work reveals the capability of PPy film coating on QCM in sensing and removing silver from several environmental samples.

  20. Synthesis and characterization of silver-polypyrrole film composite

    Science.gov (United States)

    Ayad, Mohamad. M.; Zaki, Eman

    2009-11-01

    In this work, we report the chemical polymerization of pyrrole to obtain thin film of polypyrrole (PPy) hydrochloride deposited onto the electrode of the quartz crystal microbalance (QCM). The film in the base form was exposed to a solution of AgNO 3. Electroless reduction for silver ions by the PPy film took place and silver particles were adsorbed onto the film surface. The silver particles content at the PPy films were analyzed by QCM and the results showed that the concentrations of silver uptakes increase as the original AgNO 3 solution increases. The morphology of the surface of the PPy film and the silver-PPy film composite were studied by the scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectrometry (EDX). They showed that the obtained silver particles have spherical, cubic and tetrahedral structures. X-ray diffraction (XRD) and Fourier transformed infra-red spectroscopy (FTIR) were used to characterize the structure of the powder composite. This work reveals the capability of PPy film coating on QCM in sensing and removing silver from several environmental samples.

  1. [Spectroscopic study on film formation mechanism and structure of composite silanes-V-Zr passive film].

    Science.gov (United States)

    Wang, Lei; Liu, Chang-sheng; Shi, Lei; An, Cheng-qiang

    2015-02-01

    A composite silanes-V-Zr passive film was overlayed on hot-dip galvanized steel. Attenuated total reflection Fourier transformed infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectrometer (XPS) and radio frequency glow discharge optical emission spectrometry (rf-GD-OES) were used to characterize the molecular structure of the silanes-V-Zr passive film. The mechanism of film formation was discussed: The results show that the silane molecules are crosslinked as the main film former and inorganic inhibitor is even distributed in the film. The fitting peak of 100.7 eV in XPS single Si2p energy range spectra of the composite silanes-V-Zr passive film and the widening and strengthening of the Si--O infrared absorption peak at 1100 cm(-1) indicate that the silanes were adsorbed on the surface of zinc with chemical bond of Si--O--Zn, and the silane molecules were connected with each other by bond of Si--O--Si. Two characteristic absorption peaks of amide at 1650 and 1560 cm(-1) appear in the infrared spectroscopy of the composite silanes-V-Zr passive film, and a characteristic absorption peak of epoxy groups at 910 cm(-1) disappears in the infrared spectroscopy of the passive film. The results indicate that gamma-APT can be prepared through nucleophilic ring-opening of ethylene oxide in gamma-GPT molecule to form C--N covalent bonds. The rf-GD-OES results indicate that there is a oxygen enriched layer in 0.3 microm depth of the composite silanes-V-Zr passive film. Moreover, ZrF4, ZrO2 and some inorganic matter obtained by the reaction during the forming processof the composite silanes-V-Zr passive film are distributed evenly throughout the film. According to the film composition, the physical processes and chemical reactions during the film forming process were studied by using ATR-FTIR. Based on this, the film forming mechanism was proposed.

  2. Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials.

    Science.gov (United States)

    Grinberg, Ilya; West, D Vincent; Torres, Maria; Gou, Gaoyang; Stein, David M; Wu, Liyan; Chen, Guannan; Gallo, Eric M; Akbashev, Andrew R; Davies, Peter K; Spanier, Jonathan E; Rappe, Andrew M

    2013-11-28

    Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices, and for the coupling of light absorption with other functional properties. In these materials, the strong inversion symmetry breaking that is due to spontaneous electric polarization promotes the desirable separation of photo-excited carriers and allows voltages higher than the bandgap, which may enable efficiencies beyond the maximum possible in a conventional p-n junction solar cell. Ferroelectric oxides are also stable in a wide range of mechanical, chemical and thermal conditions and can be fabricated using low-cost methods such as sol-gel thin-film deposition and sputtering. Recent work has shown how a decrease in ferroelectric layer thickness and judicious engineering of domain structures and ferroelectric-electrode interfaces can greatly increase the current harvested from ferroelectric absorber materials, increasing the power conversion efficiency from about 10(-4) to about 0.5 per cent. Further improvements in photovoltaic efficiency have been inhibited by the wide bandgaps (2.7-4 electronvolts) of ferroelectric oxides, which allow the use of only 8-20 per cent of the solar spectrum. Here we describe a family of single-phase solid oxide solutions made from low-cost and non-toxic elements using conventional solid-state methods: [KNbO3]1 - x[BaNi1/2Nb1/2O3 - δ]x (KBNNO). These oxides exhibit both ferroelectricity and a wide variation of direct bandgaps in the range 1.1-3.8 electronvolts. In particular, the x = 0.1 composition is polar at room temperature, has a direct bandgap of 1.39 electronvolts and has a photocurrent density approximately 50 times larger than that of the classic ferroelectric (Pb,La)(Zr,Ti)O3 material. The ability of KBNNO to absorb three to six times more solar energy than the current ferroelectric materials suggests a route to viable ferroelectric semiconductor-based cells for solar energy conversion and

  3. Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Silva, J.P.B.; Sekhar, K.C.; Pereira, M.; Gomes, M.J.M. [University of Minho, Centre of Physics, Braga (Portugal); Almeida, A.; Agostinho Moreira, J. [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Fisica e Astronomia, Faculdade de Ciencias da Universidade do Porto, Porto (Portugal)

    2013-11-15

    The Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} thin films were grown on the Pt-Si substrate at 700 C by using a pulsed laser deposition technique at different oxygen partial pressure (PO{sub 2}) in the range of 1-20 Pa and their properties were investigated. It is observed that the PO{sub 2} during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO{sub 2}, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance-voltage (C-V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO{sub 2} of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field. (orig.)

  4. Action of colloidal silica films on different nano-composites

    Directory of Open Access Journals (Sweden)

    S. Abdalla

    Full Text Available Nano-composite films have been the subject of extensive work to develop the energy-storage efficiency of electrostatic capacitors. Factors such as polymer purity, nano-particles size, and film morphology drastically affect the electrostatic efficiency of the dielectric material that form an insulating film between conductive electrodes of a capacitor. This in turn affects the energy storage performance of the capacitor. In the present work, we have studied the dielectric properties of 4 high pure amorphous polymer films: polymethylmethacrylate (PMMA, polystyrene, polyimide and poly-4-vinylpyridine. Comparison between the dielectric properties of these polymers has revealed that the higher break down performance is a character of polyimide PI and PMMA. Also, our experimental data shows that adding colloidal silica to PMMA and PI leads to a net decrease in the dielectric properties compared to the pure polymer. Keywords: Dielectric break down, Polymers, Nano-composite, Colloidal silica

  5. Digital Compositing Dalam Film Animasi 3 Dimensi

    Directory of Open Access Journals (Sweden)

    Cito Yasuki Yasuki Rahmad

    2016-01-01

    Full Text Available Animation is a technique mostly used in the film world. Nowadays it is growing intechnical animation creation. Animation has evolved from 2D animation to the nextstage in the new form, more realistic and interesting, that is the 3D animation. With thedevelopment of existing technology, the 3D animation is more amazing for the audience,especially 3D animation combined with real action (live action. With the digitalcompositing, the result of a combination of 3D and real action to make the film seemmore alive, because the animation is really close to the original in real life.

  6. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  7. Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications

    International Nuclear Information System (INIS)

    Liu, Shi Yang; Chua, Lynn; Tan, Kian Chuan; Valavan, S.E.

    2010-01-01

    We report on novel ferroelectric thin film compositions for use in non-volatile memory storage and biomedical tactile sensor applications. The lead zirconate titanate (PZT) composition was modified by lanthanum (La 3+ ) (PLZT) and vanadium (V 5+ ) (PZTV, PLZTV) doping. Hybrid films with PZTV and PLZTV as top layers are also made using seed layers of differing compositions using sol-gel and spin coating methods. La 3+ doping decreased the coercive field, polarization and leakage current, while increasing the relative permittivity. V 5+ doping, while having similar effects, results in an enhanced polarization, with comparable dielectric loss characteristics. Complex doping of both La 3+ and V 5+ in PLZTV, while reducing the polarization relative to PZTV, significantly decreases the coercive field. Hybrid films have a greater uniformity of grain formation than non-hybrid films, thus decreasing the coercive field, leakage current and polarization fatigue while increasing the relative permittivity. Analysis using X-ray diffraction (XRD) verified the retention of the PZT perovskite structure in the novel films. PLZT/PZTV has been identified as an optimal ferroelectric film composition due to its desirable ferroelectric, fatigue and dielectric properties, including the highest observed remnant polarization (P r ) of ∼ 25 μC/cm 2 , saturation polarization (P sat ) of ∼ 58 μC/cm 2 and low coercive field (E c ) of ∼ 60 kV/cm at an applied field of ∼ 1000 kV/cm, as well as a low leakage current density of ∼ 10 -5 A/cm 2 at 500 kV/cm and fatigue resistance of up to ∼ 10 10 switching cycles.

  8. Characteristics of ferroelectric Pb(Zr,Ti)O3 thin films having Pt/PtOx electrode barriers

    International Nuclear Information System (INIS)

    Lee, Kwangbae; Rhee, Byung Roh; Lee, Chanku

    2001-01-01

    We have investigated the feasibility of the Pt/PtO x multilayer as an electrode barrier for Pb(Zr,Ti)O 3 (PZT)-based ferroelectric random access memories. PtO x and Pt layers were prepared on polycrystalline-Si/SiO 2 /Si substrates by means of the sputtering method in Ar and O 2 ambience, and the Pb(Zr 0.53 Ti 0.47 )O 3 layer was prepared by the sol-gel method. A capacitor consisting of Pt/PtO x /PZT/PtO x /Pt/PtO x /poly-Si had a remanent polarization of 18 μC/cm 2 and a low coercive field of 32 kV/cm. The polarization fatigue behavior of test capacitors was improved as compared with that of Pt/PZT/Pt, which showed negligible fatigue loss of 15% after 10 11 switching repetitions with a frequency of 1 MHz. Copyright 2001 American Institute of Physics

  9. Effects of {sup 60}Co γ-ray irradiation on microstructure and ferroelectric properties of Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zan [Shenyang University of Technology, Shenyang 110870 (China); Shenyang University of Chemical Technology, Shenyang 110142 (China); Jiang, Wei, E-mail: weijiang.sut.edu@gmail.com [Shenyang University of Technology, Shenyang 110870 (China); Li, San-xi [Shenyang University of Technology, Shenyang 110870 (China); Tong, Jun-sheng [Liaoning Provincial Academy of Agricultural Science Radiation Center, 110142 (China)

    2016-01-01

    Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films were deposited on Pt/Ti/SiO{sub 2}/Si substrates through sol–gel method. Films underwent {sup 60}Co γ-ray irradiation with different doses; 0, 50, 100 and 150 kGy, respectively. Impacts of γ-ray on the microstructure, ferroelectric properties, leakage current density and fatigue characteristic were studied in detail. The results of SEM images show that grain patterns become irregular. Remnant polarization (2Pr) and coercive field (2Ec) decrease with irradiation dose increase. C–V curves reveal obvious asymmetry along y-axis. The irradiated thin films display lower leakage current density and fatigue endurance up to more than 10{sup 10} switching cycles. These results suggest that radiation can improve the film performance in some areas.

  10. Fabrication of polypeptide-based piezoelectric composite polymer film

    International Nuclear Information System (INIS)

    Farrar, Dawnielle; West, James E.; Busch-Vishniac, Ilene J.; Yu, Seungju M.

    2008-01-01

    A new class of molecular composite piezoelectric material was produced by simultaneous poling and curing of a homogeneous solution comprising poly(γ-benzyl α,L-glutamate) and methylmethacrylate via corona discharge methods. This film exhibited high piezoelectricity (d 33 = 23 pC N -1 ), and its mechanical characteristics (modulus = 450 MPa) were similar to those of low molecular weight poly(methylmethacrylate). As it is produced via solution-based fabrication processes, the composite film is conducive to miniaturization for small sensors with integrated electronics, and could also potentially be used in piezoelectric coating applications

  11. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric MIM structures

    Energy Technology Data Exchange (ETDEWEB)

    Kozodaev, M.G.; Chernikova, A.G.; Markeev, A.M. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); Lebedinskii, Y.Y. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoye Shosse 31, 115409 Moscow (Russian Federation); Polyakov, S.N. [Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya str. 7a, 142190, Troitsk, Moscow (Russian Federation)

    2017-06-15

    In this work chemical and electrical properties of TiN films, grown by low temperature plasma-enhanced atomic layer deposition (PE-ALD) process from TiCl{sub 4} and NH{sub 3}, were investigated. Electrical resistivity as low as 250 μOhm x cm, as well as the lowest Cl impurity content, was achieved at 320 C. Full-ALD Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based metal-ferroelectric-metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE-ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric capacitor. Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) was used for its thickness determination and a visible wake-up effect in underlying Hf{sub 0.5}Zr{sub 0.5}O{sub 2} layer was clearly observed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  13. Nanocellulose-Zeolite Composite Films for Odor Elimination.

    Science.gov (United States)

    Keshavarzi, Neda; Mashayekhy Rad, Farshid; Mace, Amber; Ansari, Farhan; Akhtar, Farid; Nilsson, Ulrika; Berglund, Lars; Bergström, Lennart

    2015-07-08

    Free standing and strong odor-removing composite films of cellulose nanofibrils (CNF) with a high content of nanoporous zeolite adsorbents have been colloidally processed. Thermogravimetric desorption analysis (TGA) and infrared spectroscopy combined with computational simulations showed that commercially available silicalite-1 and ZSM-5 have a high affinity and uptake of volatile odors like ethanethiol and propanethiol, also in the presence of water. The simulations showed that propanethiol has a higher affinity, up to 16%, to the two zeolites compared with ethanethiol. Highly flexible and strong free-standing zeolite-CNF films with an adsorbent loading of 89 w/w% have been produced by Ca-induced gelation and vacuum filtration. The CNF-network controls the strength of the composite films and 100 μm thick zeolite-CNF films with a CNF content of less than 10 vol % displayed a tensile strength approaching 10 MPa. Headspace solid phase microextraction (SPME) coupled to gas chromatography-mass spectroscopy (GC/MS) analysis showed that the CNF-zeolite films can eliminate the volatile thiol-based odors to concentrations below the detection ability of the human olfactory system. Odor removing zeolite-cellulose nanofibril films could enable improved transport and storage of fruits and vegetables rich in odors, for example, onion and the tasty but foul-smelling South-East Asian Durian fruit.

  14. Bioinspired Transparent Laminated Composite Film for Flexible Green Optoelectronics.

    Science.gov (United States)

    Lee, Daewon; Lim, Young-Woo; Im, Hyeon-Gyun; Jeong, Seonju; Ji, Sangyoon; Kim, Yong Ho; Choi, Gwang-Mun; Park, Jang-Ung; Lee, Jung-Yong; Jin, Jungho; Bae, Byeong-Soo

    2017-07-19

    Herein, we report a new version of a bioinspired chitin nanofiber (ChNF) transparent laminated composite film (HCLaminate) made of siloxane hybrid materials (hybrimers) reinforced with ChNFs, which mimics the nanofiber-matrix structure of hierarchical biocomposites. Our HCLaminate is produced via vacuum bag compressing and subsequent UV-curing of the matrix resin-impregnated ChNF transparent paper (ChNF paper). It is worthwhile to note that this new type of ChNF-based transparent substrate film retains the strengths of the original ChNF paper and compensates for ChNF paper's drawbacks as a flexible transparent substrate. As a result, compared with high-performance synthetic plastic films, such as poly(ethylene terephthalate), poly(ether sulfone), poly(ethylene naphthalate), and polyimide, our HCLaminate is characterized to exhibit extremely smooth surface topography, outstanding optical clarity, high elastic modulus, high dimensional stability, etc. To prove our HCLaminate as a substrate film, we use it to fabricate flexible perovskite solar cells and a touch-screen panel. As far as we know, this work is the first to demonstrate flexible optoelectronics, such as flexible perovskite solar cells and a touch-screen panel, actually fabricated on a composite film made of ChNF. Given its desirable macroscopic properties, we envision our HCLaminate being utilized as a transparent substrate film for flexible green optoelectronics.

  15. Polarization enhancement and ferroelectric switching enabled by interacting magnetic structures in DyMnO3 thin films

    KAUST Repository

    Lu, Chengliang; Dong, Shuai; Xia, Zhengcai; Luo, Hui; Yan, Zhibo; Wang, Haowen; Tian, Zhaoming; Yuan, Songliu; Wu, Tao; Liu, Junming

    2013-01-01

    magnetically induced electric polarization and its remarkable response to magnetic field (an enhancement of ?800% upon a field of 2 Tesla at 2 K) in DyMnO3 thin films grown on Nb-SrTiO3 substrates. Accompanying with the large polarization enhancement

  16. Leakage current phenomena in Mn-doped Bi(Na,K)TiO_3-based ferroelectric thin films

    International Nuclear Information System (INIS)

    Walenza-Slabe, J.; Gibbons, B. J.

    2016-01-01

    Mn-doped 80(Bi_0_._5Na_0_._5)TiO_3-20(Bi_0_._5K_0_._5)TiO_3 thin films were fabricated by chemical solution deposition on Pt/TiO_2/SiO_2/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, there were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ_i_o_n ≈ 1.7 × 10"−"1"2 cm"2 V"−"1 s"−"1 and E_A_,_i_o_n ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.

  17. Programmable ferroelectric tunnel memristor

    Directory of Open Access Journals (Sweden)

    Andy eQuindeau

    2014-02-01

    Full Text Available We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8]O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.

  18. mwnts composite film modified glassy carbon electrode

    African Journals Online (AJOL)

    Preferred Customer

    ABSTRACT: A poly p-aminosalicylic acid (Poly(p-ASA)) and multiwall carbon nanotubes. (MWCNTs) composite modified glassy carbon (GC) electrode was constructed by casting the MWNTs on the GC electrode surface followed by electropolymerization of the p-ASA on the MWCNTs/GCE. The electrochemical behaviours ...

  19. Ferroelectric properties of sandwich structured (Bi, La)4T3O12/Pb(Zr, Ti)O3/ (Bi, La)4Ti3O12 thin films on Pt/Ti/SiO2/Si substrates

    International Nuclear Information System (INIS)

    Bao Dinghua; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

    2002-01-01

    Sandwich structured (Bi, La) 4 Ti 3 O 12 /Pb(Zr, Ti)O 3 /(Bi, La) 4 Ti 3 O 12 thin films were fabricated on Pt/Ti/SiO 2 /Si substrates, with the intention of simultaneously utilizing the advantages of both (Bi, La) 4 Ti 3 O 12 (BLT) and Pb(Zr, Ti)O 3 (PZT) thin films such as non-fatigue behaviours of BLT and good ferroelectric properties of PZT. Both BLT and PZT layers were prepared by a chemical solution deposition technique. The experiments demonstrated that the sandwich structure showed fatigue-free characteristics at least up to 10 10 switching bipolar pulse cycles under 8 V and excellent retention properties. The sandwich structured thin films also exhibited well-defined hysteresis loops with a remanent polarization (2P r ) of 8.8 μC cm -2 and a coercive field (E c ) of 47 kV cm -1 . The room-temperature dielectric constant and dissipation factor were 210 and 0.031, respectively, at a frequency of 100 kHz. These results suggest that this sandwich structure is a promising material combination for ferroelectric memory applications. (author)

  20. Influence of Polycation Composition on Electrochemical Film Formation

    Directory of Open Access Journals (Sweden)

    Sabine Schneider

    2018-04-01

    Full Text Available The effect of polyelectrolyte composition on the electrodeposition onto platinum is investigated using a counterion switching approach. Film formation of preformed polyelectrolytes is triggered by oxidation of hexacyanoferrates(II (ferrocyanide, leading to polyelectrolyte complexes, which are physically crosslinked by hexacyanoferrate(III (ferricyanide ions due to preferential ferricyanide/polycation interactions. In this study, the electrodeposition of three different linear polyelectrolytes, namely quaternized poly[2-(dimethylaminoethyl methacrylate] (i.e., poly{[2-(methacryloyloxyethyl]trimethylammonium chloride}; PMOTAC, quaternized poly[2-(dimethylaminoethyl acrylate] (i.e., poly{[2-(acryloyloxyethyl]trimethylammonium chloride}; POTAC, quaternized poly[N-(3-dimethylaminopropylmethacrylamide] (i.e., poly{[3-(methacrylamidopropyl]trimethylammonium chloride}; PMAPTAC and different statistical copolymers of these polyelectrolytes with N-(3-aminopropylmethacrylamide (APMA, are studied. Hydrodynamic voltammetry utilizing a rotating ring disk electrode (RRDE shows the highest deposition efficiency DE for PMOTAC over PMAPTAC and over POTAC. Increasing incorporation of APMA weakens the preferred interaction of the quaternized units with the hexacyanoferrate(III ions. At a sufficient APMA content, electrodeposition can thus be prevented. Additional electrochemical quartz crystal microbalance measurements reveal the formation of rigid polyelectrolyte films being highly crosslinked by the hexacyanoferrate(III ions. Results indicate a different degree of water incorporation into these polyelectrolyte films. Hence, by adjusting the polycation composition, film properties can be tuned, while different chemistries can be incorporated into these electrodeposited thin hydrogel films.

  1. Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

    KAUST Repository

    Altynnikov, A. G.

    2014-01-27

    The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).

  2. Photoconductivity of reduced graphene oxide and graphene oxide composite films

    International Nuclear Information System (INIS)

    Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

    2012-01-01

    A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

  3. Chitosan-based films composites for wound healing purposes

    International Nuclear Information System (INIS)

    Alves, Natali de O.; Silva, Gabriela T. da; Schulz, Gracelie A.S.; Fajardo, Andre R.

    2015-01-01

    Chitosan has been extensively applied in the developing of biomaterials due to its desirable good physico-chemical and biological properties. According to this, here films composite of chitosan, poly(vinyl alcohol) and bovine bone powder were prepared by casting willing to be applied in wound healing purposes. Moreover, the first step was the developing of a suitable method to obtain bovine bone powder, which was utilized here as filler. All the materials and films were fully characterized by FTIR, DRX and thermal analysis. Water uptake capacity was measured by swelling assays. (author)

  4. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

    2016-12-30

    Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  5. Electrostatic micromotor based on ferroelectric ceramics

    Science.gov (United States)

    Baginsky, I. L.; Kostsov, E. G.

    2004-11-01

    A new electrostatic micromotor is described that utilizes the electromechanical energy conversion principle earlier described by the authors. The electromechanical energy conversion is based on reversible electrostatic rolling of thin metallic films (petals) on a ferroelectric surface. The motor's active media are layers of ferroelectric ceramics (about 100 µm in thickness). The characteristics of the electrostatic rolling of the petals on different ceramic surfaces are studied, as well as the dynamic characteristics of the micromotors. It is shown that the use of antiferroelectric material allows one to reach a specific energy capacitance comparable to that of the micromotors based on ferroelectric films and to achieve a specific power of 30-300 µW mm-2.

  6. Aligned Carbon Nanotubes for High-Performance Films and Composites

    Science.gov (United States)

    Zhang, Liwen

    Carbon nanotubes (CNTs) with extraordinary properties and thus many potential applications have been predicted to be the best reinforcements for the next-generation multifunctional composite materials. Difficulties exist in transferring the most use of the unprecedented properties of individual CNTs to macroscopic forms of CNT assemblies. Therefore, this thesis focuses on two main goals: 1) discussing the issues that influence the performance of bulk CNT products, and 2) fabricating high-performance dry CNT films and composite films with an understanding of the fundamental structure-property relationship in these materials. Dry CNT films were fabricated by a winding process using CNT arrays with heights of 230 mum, 300 im and 360 mum. The structures of the as-produced films, as well as their mechanical and electrical properties were examined in order to find out the effects of different CNT lengths. It was found that the shorter CNTs synthesized by shorter time in the CVD furnace exhibited less structural defects and amorphous carbon, resulting in more compact packing and better nanotube alignment when made into dry films, thus, having better mechanical and electrical performance. A novel microcombing approach was developed to mitigate the CNT waviness and alignment in the dry films, and ultrahigh mechanical properties and exceptional electrical performance were obtained. This method utilized a pair of sharp surgical blades with microsized features at the blade edges as micro-combs to, for the first time, disentangle and straighten the wavy CNTs in the dry-drawn CNT sheet at single-layer level. The as-combed CNT sheet exhibited high level of nanotube alignment and straightness, reduced structural defects, and enhanced nanotube packing density. The dry CNT films produced by microcombing had a very high Young's modulus of 172 GPa, excellent tensile strength of 3.2 GPa, and unprecedented electrical conductivity of 1.8x10 5 S/m, which were records for CNT films or

  7. Effects of Bi doping on dielectric and ferroelectric properties

    Indian Academy of Sciences (India)

    [Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of ...

  8. High performance thin-film composite forward osmosis membrane.

    Science.gov (United States)

    Yip, Ngai Yin; Tiraferri, Alberto; Phillip, William A; Schiffman, Jessica D; Elimelech, Menachem

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 mum) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m(2-)h(-1), while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution.

  9. High Performance Thin-Film Composite Forward Osmosis Membrane

    KAUST Repository

    Yip, Ngai Yin

    2010-05-15

    Recent studies show that osmotically driven membrane processes may be a viable technology for desalination, water and wastewater treatment, and power generation. However, the absence of a membrane designed for such processes is a significant obstacle hindering further advancements of this technology. This work presents the development of a high performance thin-film composite membrane for forward osmosis applications. The membrane consists of a selective polyamide active layer formed by interfacial polymerization on top of a polysulfone support layer fabricated by phase separation onto a thin (40 μm) polyester nonwoven fabric. By careful selection of the polysulfone casting solution (i.e., polymer concentration and solvent composition) and tailoring the casting process, we produced a support layer with a mix of finger-like and sponge-like morphologies that give significantly enhanced membrane performance. The structure and performance of the new thin-film composite forward osmosis membrane are compared with those of commercial membranes. Using a 1.5 M NaCl draw solution and a pure water feed, the fabricated membranes produced water fluxes exceeding 18 L m2-h-1, while consistently maintaining observed salt rejection greater than 97%. The high water flux of the fabricated thin-film composite forward osmosis membranes was directly related to the thickness, porosity, tortuosity, and pore structure of the polysulfone support layer. Furthermore, membrane performance did not degrade after prolonged exposure to an ammonium bicarbonate draw solution. © 2010 American Chemical Society.

  10. Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr0.45Ti0.55O3 thin films on silicon in relation to grain tilt

    Directory of Open Access Journals (Sweden)

    Evert P Houwman, Minh D Nguyen, Matthijn Dekkers and Guus Rijnders

    2013-01-01

    Full Text Available Piezoelectric thin films of PbZr0.45Ti0.55O3 were grown on Si substrates in four different ways, resulting in different crystalline structures, as determined by x-ray analysis. The crystalline structures were different in the spread in tilt angle and the in-plane alignment of the crystal planes between different grains. It is found that the deviations of the ferroelectric polarization loop from that of the ideal rectangular loop (reduction of the remanent polarization with respect to the saturation polarization, dielectric constant of the film, slanting of the loop, coercive field value all scale with the average tilt angle. A model is derived based on the assumption that the tilted grain boundaries between grains affect the film properties locally. This model describes the observed trends. The effective piezoelectric coefficient d33,eff shows also a weak dependence on the average tilt angle for films grown in a single layer, whereas it is strongly reduced for the films deposited in multiple layers. The least affected properties are obtained for the most epitaxial films, i.e. grown on a SrTiO3 epitaxial seed layer, by pulsed laser deposition. These films are intrinsically stable and do not require poling to acquire these stable properties.

  11. Thin film composition with biological substance and method of making

    International Nuclear Information System (INIS)

    Campbell, A.A.; Song, L.

    1999-01-01

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphous structures, organic crystalline structures, and organic amorphous structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobial, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflammatory, steroid, nonsteroid anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor consisting of the compositions listed above

  12. Effect of substrate temperature in the structural, optical and ferroelectric properties of thin films of BaTiO{sub 3} deposited by RF sputtering; Efecto de la temperatura de substrato en las propiedades estructurales, opticas y ferroelectricas de peliculas delgadas de BaTiO{sub 3} depositadas por RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A. [Universidad Autonoma de San Luis Potosi, Coordinacion Academica Region Altiplano, Carretera a Cedral Km. 5 -600, Matehuala, 78800 San Luis Potosi (Mexico); Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Calz. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana (Cuba); Melendez L, M. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2012-07-01

    Thin films of Barium Titanate (BaTiO{sub 3}) were grown on nichrome and quartz substrates, using a BaTiO{sub 3} target, by RF sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-ray diffraction showed tetragonal structure with increases of the crystallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8{sup o} C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8{sup o} C. (Author)

  13. Study of carbon nanotubes based Polydimethylsiloxane composite films

    International Nuclear Information System (INIS)

    Shahzad, M I; Giorcelli, M; Shahzad, N; Guastella, S; Castellino, M; Jagdale, P; Tagliaferro, A

    2013-01-01

    Thanks to their remarkable characteristics, carbon nanotubes (CNTs) have fields of applications which are growing every day. Among them, the use of CNTs as filler for polymers is one of the most promising. In this work we report on Polydimethylsiloxane (PDMS) composites with different weight percentages (0.0% to 3.0%) of multiwall carbon nanotubes (MWCNTs) having diameter 10–30 nm and length 20–30 μm. To achieve optimum dispersion of CNTs in PDMS matrix, high speed mechanical stirring and ultrasonication were performed. By using the doctor blade technique, 70 μm thick uniform films were produced on glass. They were subsequently thermally cured and detached from the glass to get flexible and self standing films. The surface morphological study done by FESEM, shows that CNTs are well dispersed in the PDMS. Raman spectroscopy and FTIR were used to investigate the possible structural changes in the polymer composite. To examine the optical behavior UV-VIS spectroscopy was employed in both specular and diffused modes. A linear increase in absorption coefficient is found with the increasing percentage of CNTs while the transmittance decreases exponentially. The results confirm the dependence of optical limiting effect on the quantity of MWCNTs. Based on optical study, MWCNTs/PDMS composite films can be a promising material to extend performances of optical limiters against laser pulses, which is often required in lasing systems.

  14. Molecular interactions in gelatin/chitosan composite films.

    Science.gov (United States)

    Qiao, Congde; Ma, Xianguang; Zhang, Jianlong; Yao, Jinshui

    2017-11-15

    Gelatin and chitosan were mixed at different mass ratios in solution forms, and the rheological properties of these film-forming solutions, upon cooling, were studied. The results indicate that the significant interactions between gelatin and chitosan promote the formation of multiple complexes, reflected by an increase in the storage modulus of gelatin solution. Furthermore, these molecular interactions hinder the formation of gelatin networks, consequently decreasing the storage modulus of polymer gels. Both hydrogen bonds and electrostatic interactions are formed between gelatin and chitosan, as evidenced by the shift of the amide-II bands of polymers. X-ray patterns of composite films indicate that the contents of triple helices decrease with increasing chitosan content. Only one glass transition temperature (T g ) was observed in composite films with different composition ratios, and it decreases gradually with an increase in chitosan proportion, indicating that gelatin and chitosan have good miscibility and form a wide range of blends. Copyright © 2017 Elsevier Ltd. All rights reserved.

  15. Zeta-potential of fouled thin film composite membrane

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, K.; Hachisuka, H.; Nakamura, T. [Nitto denko Corp., Ibaraki, (Japan); Kimura, S. [Kogakuin University, Tokyo (Japan). Dept. of Environ. Chemical Engineering; Ueyama, K. [Osaka University, Osaka (Japan). Dept. of Chemical Engineering

    1999-10-01

    The surface zeta-potential of a cross-linked polyamide thin film composite reverse osmosis membrane was measured using an electrophoresis method. It was confirmed that this method could be effectively applied to analyze the fouling of such membranes. It is known that the water flux of membranes drastically decreases as a result of fouling by surfactants. Although the surfactants adsorbed on reverse osmosis membranes could not be detected by conventional methods such as SEM, EDX and FT-IR, their presence could be clarified by the profile measurements of the surface zeta-potential. The profiles of the membrane surface zeta-potentials changed to more positive values in the measured pH range as a result of fouling by cationic or amphoteric surfactants. This measuring method of surface zeta-potentials allowed us to analyze a very small amount of fouling of a thin film composite reverse osmosis membrane. This method could be used to analyze the fouled surface of the thin film composite reverse osmosis membrane which is used for production of ultrapure water and shows a remarkable decrease in flux. It also became clear that this method is easy and effective for the reverse osmosis membrane surface analysis of adsorbed materials such as surfactants. (author)

  16. Crystallization and electrical characteristics of ferroelectric Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} thin films prepared by a sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Y. [Department of Physics, Jianghan University, Wuhan 430056 (China); Department of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Lu, C.J. [Department of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Laboratory of Fiber Materials and Modern Textile, the Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)], E-mail: chaojing_lu@yahoo.com; Qi, Y.J. [Department of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Zhou, Y.H. [Department of Physics, Jianghan University, Wuhan 430056 (China)

    2008-07-01

    Ferroelectric Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} (BNdT) thin films were deposited on Pt/Ti/SiO{sub 2}/Si substrates using a sol-gel process and Bi(NO{sub 3}){sub 3} was used as one of starting materials. Upon heating the major weight loss of the wet films occurred below 320 deg. C and nitrogen was almost completely removed at 650 deg. C. The films began to crystallize around 520 deg. C. The films annealed at 750 deg. C contain grains of 50-100 nm in diameter. The BNdT film capacitors with Pt top electrodes exhibited well-saturated hysteresis loops with a remanent polarization (2P{sub r}) of 57.4 {mu}C/cm{sup 2} and a coercive field of 108.3 kV/cm. The Pt/BNdT/Pt capacitors did not show any significant fatigue up to 6x10{sup 10} read/write switching cycles, and the retained charges remained nearly constant up to 10{sup 4} s after applying a writing pulse. The leakage current density of the BNdT films is less than 5x10{sup -8} A/cm{sup 2} under a low external field below 73 kV/cm.

  17. Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO{sub 3} epitaxial films grown on MgO Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Satish; Kumar, Dhirendra; Sathe, V. G., E-mail: vasant@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India); Kumar, Ravi; Sharma, T. K. [Semiconductor Physics and Devices Lab, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2015-04-07

    Recently, a large enhancement in the ferroelectric transition temperature of several oxides is reported by growing the respective thin films on appropriate substrates. This phenomenon is correlated with high residual strain in thin films often leading to large increase in the tetragonality of their crystal structure. However, such an enhancement of transition temperature is usually limited to very thin films of ∼10 nm thickness. Here, we report growth of fully strained epitaxial thin films of BaTiO{sub 3} of 400 nm thickness, which are coherently grown on MgO substrates by pulsed laser deposition technique. Conventional high resolution x-ray diffraction and also the reciprocal space map measurements confirm that the film is fully strained with in-plane tensile strain of 5.5% that dramatically increases the tetragonality to 1.05. Raman measurements reveal that the tetragonal to cubic structural phase transition is observed at 583 K, which results in an enhancement of ∼200 K. Furthermore, temperature dependent Raman studies on these films corroborate absence of all the low temperature phase transitions. Numerical calculations based on thermodynamical model predict a value of the transition temperature that is greater than 1500 °C. Our experimental results are therefore in clear deviation from the existing strain dependent phase diagrams.

  18. Preparation and Properties of Silver Nanowire-Based Transparent Conductive Composite Films

    Science.gov (United States)

    Tian, Ji-Li; Zhang, Hua-Yu; Wang, Hai-Jun

    2016-06-01

    Silver nanowire-based transparent conductive composite films with different structures were successfully prepared using various methods, including liquid polyol, magnetron sputtering and spin coating. The experimental results revealed that the optical transmittance of all different structural composite films decreased slightly (1-3%) compared to pure films. However, the electrical conductivity of all composite films had a great improvement. Under the condition that the optical transmittance was greater than 78% over the wavelength range of 400-800 nm, the AgNW/PVA/AgNW film became a conductor, while the AZO/AgNW/AZO film and the ITO/AgNW/ITO film showed 88.9% and 94% reductions, respectively, for the sheet resistance compared with pure films. In addition, applying a suitable mechanical pressure can improve the conductivity of AgNW-based composite films.

  19. Preparation and properties of carbohydrate-based composite films incorporated with CuO nanoparticles.

    Science.gov (United States)

    Shankar, Shiv; Wang, Long-Feng; Rhim, Jong-Whan

    2017-08-01

    The present study aimed to develop the carbohydrate biopolymer based antimicrobial films for food packaging application. The nanocomposite films of various biopolymers and copper oxide nanoparticles (CuONPs) were prepared by solvent casting method. The nanocomposite films were characterized using SEM, FTIR, XRD, and UV-vis spectroscopy. The thermal stability, UV barrier, water vapor permeability, and antibacterial activity of the composite films were also evaluated. The surface morphology of the films was dependent on the types of polymers used. The XRD revealed the crystallinity of CuONPs in the composite films. The addition of CuONPs increased the thickness, tensile strength, UV barrier property, relative humidity, and water vapor barrier property. The CuONPs incorporated composite films exhibited strong antibacterial activity against Escherichia coli and Listeria monocytogenes. The developed composite films could be used as a UV-light barrier antibacterial films for active food packaging. Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. Magnetic coupling mechanisms in particle/thin film composite systems

    Directory of Open Access Journals (Sweden)

    Giovanni A. Badini Confalonieri

    2010-12-01

    Full Text Available Magnetic γ-Fe2O3 nanoparticles with a mean diameter of 20 nm and size distribution of 7% were chemically synthesized and spin-coated on top of a Si-substrate. As a result, the particles self-assembled into a monolayer with hexagonal close-packed order. Subsequently, the nanoparticle array was coated with a Co layer of 20 nm thickness. The magnetic properties of this composite nanoparticle/thin film system were investigated by magnetometry and related to high-resolution transmission electron microscopy studies. Herein three systems were compared: i.e. a reference sample with only the particle monolayer, a composite system where the particle array was ion-milled prior to the deposition of a thin Co film on top, and a similar composite system but without ion-milling. The nanoparticle array showed a collective super-spin behavior due to dipolar interparticle coupling. In the composite system, we observed a decoupling into two nanoparticle subsystems. In the ion-milled system, the nanoparticle layer served as a magnetic flux guide as observed by magnetic force microscopy. Moreover, an exchange bias effect was found, which is likely to be due to oxygen exchange between the iron oxide and the Co layer, and thus forming of an antiferromagnetic CoO layer at the γ-Fe2O3/Co interface.

  1. Electrochemical deposition of Mg(OH)2/GO composite films for corrosion protection of magnesium alloys

    OpenAIRE

    Fengxia Wu; Jun Liang; Weixue Li

    2015-01-01

    Mg(OH)2/graphene oxide (GO) composite film was electrochemical deposited on AZ91D magnesium alloys at constant potential. The characteristics of the Mg(OH)2/GO composite film were investigated by scanning electron microscope (SEM), energy-dispersive X-ray spectrometry (EDS), X-ray diffractometer (XRD) and Raman spectroscopy. It was shown that the flaky GO randomly distributed in the composite film. Compared with the Mg(OH)2 film, the Mg(OH)2/GO composite film exhibited more uniform and compac...

  2. Electron field emission from screen-printed graphene/DWCNT composite films

    International Nuclear Information System (INIS)

    Xu, Jinzhuo; Pan, Rong; Chen, Yiwei; Piao, Xianqin; Qian, Min; Feng, Tao; Sun, Zhuo

    2013-01-01

    Highlights: ► The field emission performance improved significantly when adding graphene into DWCNTs as the emission material. ► We set up a model of pure DWCNT films and graphene/DWCNT composite films. ► We discussed the contact barrier between emission films and electric substrates by considering the Fermi energies of silver, DWCNT and graphene. - Abstract: The electron field emission properties of graphene/double-walled carbon nanotube (DWCNT) composite films prepared by screen printing have been systematically studied. Comparing with the pure DWCNT films and pure graphene films, a significant enhancement of electron emission performance of the composite films are observed, such as lower turn-on field, higher emission current density, higher field enhancement factor, and long-term stability. The optimized composite films with 20% weight ratio of graphene show the best electron emission performance with a low turn-on field of 0.62 V μm −1 (at 1 μA cm −2 ) and a high field enhancement factor β of 13,000. A model of the graphene/DWCNT composite films is proposed, which indicate that a certain amount of graphene will contribute the electron transmission in the silver substrate/composite films interface and in the interior of composite films, and finally improve the electron emission performance of the graphene/DWCNT composite films.

  3. Ferroelectric and piezoelectric properties of lead-free BaTiO{sub 3} doped Bi{sub 0.5}Na{sub 0.5}TiO{sub 3} thin films from metal-organic solution deposition

    Energy Technology Data Exchange (ETDEWEB)

    Acharya, Susant Kumar [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Semiconductor Science and Technology, Basic Research Laboratory (BRL), Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Lee, Sang-Kwon; Hyung, Jung-Hwan [Department of Semiconductor Science and Technology, Basic Research Laboratory (BRL), Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Yang, Yun-Ho; Kim, Bok-Hee [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Ahn, Byung-Guk, E-mail: bkahn@jbnu.ac.kr [Division of Advanced Materials Engineering, Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2012-11-05

    Highlights: Black-Right-Pointing-Pointer Lead-free BNT-BT thin films from an optimized metal-organic solution deposition. Black-Right-Pointing-Pointer Phase and microstructure evolution with annealing temperature. Black-Right-Pointing-Pointer A relatively low leakage current density. Black-Right-Pointing-Pointer Good dielectric constant of 613 at a frequency of 1 kHz. Black-Right-Pointing-Pointer High remanent polarization and piezoelectric constant comparable to PZT thin films. - Abstract: Lead-free 0.94Bi{sub 0.5}Na{sub 0.5}TiO{sub 3}-0.06BaTiO{sub 3} (BNT-BT) piezoelectric thin films were prepared by metal-organic solution deposition onto a Pt/Ti/SiO{sub 2}/Si substrate. A dense and well crystallized thin film with a perovskite phase was obtained by annealing these films at 700 Degree-Sign C. Atomic force microscopy showed that these films were smooth and crack-free with an average grain size on the order of 200 nm. Thin films of 356 nm thickness exhibited a small signal dielectric constant and a loss tangent at 1 kHz of 613 and 0.044, respectively. Ferroelectric hysteresis measurements indicated a remanent polarization value of 21.5 {mu}C/cm{sup 2} with a coercive field of 164.5 kV/cm. The leakage current density of the thin film was 4.08 Multiplication-Sign 10{sup -4} A/cm{sup 2} at an applied electric field of 200 kV/cm. A typical butterfly-shaped piezoresponse loop was observed and the effective piezoelectric coefficient (d{sub 33}) of the BNT-BT thin film was approximately 51.6 pm/V.

  4. Fabrication and characterization of silk fibroin/bioactive glass composite films

    International Nuclear Information System (INIS)

    Zhu Hailin; Liu Na; Feng Xinxing; Chen Jianyong

    2012-01-01

    Composite films of silk fibroin (SF) with nano bioactive glass (NBG) were prepared by the solvent casting method, and the structures and properties of the composite films were characterized. Fourier transform infrared (FT-IR) spectroscopy analysis shows that the random coil and β-sheet structure co-exist in the SF films. Results of field emission scanning electron microscope (FESEM) indicate that the NBG particles are uniformly dispersed in the SF films. The measurements of the water contact angles suggest that the incorporation of NBG into SF can improve the hydrophilicity of the composites. The bioactivity of the composite films was evaluated by soaking in 1.5 times simulated body fluid (1.5 × SBF), and formation of a hydroxycarbonate apatite (HCA) layer was determined by XRD and FESEM. The results show that the SF/NBG composite film is bioactive as it induces the formation of HCA on the surface of the composite film after soaking in 1.5 × SBF for 7 days. In vitro osteoblasts attachment and proliferation tests show that the composite film is a good matrix for the growth of osteoblasts. Consequently, the incorporation of NBG into the SF film can enhance both the bioactivity and biocompatibility of the film, which suggests that the SF/NBG composite film may be a potential biomaterial for bone tissue engineering. - Highlights: ► The incorporation of NBG into SF can improve the hydrophilicity of the SF/NBG composite films. ► The SF/NBG composite films show the better bioactivity than the pure SF film. ► The SF/NBG composite films facilitate cell growth and promote cell proliferation and differentiation.

  5. Poly (vinylidene fluoride-trifluoroethylene/barium titanate nanocomposite for ferroelectric nonvolatile memory devices

    Directory of Open Access Journals (Sweden)

    Uvais Valiyaneerilakkal

    2013-04-01

    Full Text Available The effect of barium titanate (BaTiO3 nanoparticles (particle size <100nm on the ferroelectric properties of poly (vinylidenefluoride-trifluoroethylene P(VDF-TrFE copolymer has been studied. Different concentrations of nanoparticles were added to P(VDF-TrFE using probe sonication, and uniform thin films were made. Polarisation - Electric field (P-E hysteresis analysis shows an increase in remnant polarization (Pr and decrease in coercive voltage (Vc. Piezo-response force microscopy analysis shows the switching capability of the polymer composite. The topography and surface roughness was studied using atomic force microscopy. It has been observed that this nanocomposite can be used for the fabrication of non-volatile ferroelectric memory devices.

  6. Comment on "Interesting Evidence for Template-Induced Ferroelectric Behavior in Ultra-Thin Titanium Dioxide Films Grown on (110) Neodymium Gallium Oxide Substrates"

    Czech Academy of Sciences Publication Activity Database

    Skiadopoulou, Styliani; Kamba, Stanislav; Drahokoupil, Jan; Kroupa, Jan; Deepak, N.; Pemble, M.E.; Whatmore, R.W.

    2016-01-01

    Roč. 26, č. 5 (2016), s. 642-646 ISSN 1616-301X R&D Projects: GA ČR GA15-08389S EU Projects: European Commission(XE) 607521 - NOTEDEV Institutional support: RVO:68378271 Keywords : ferroelectrics * soft modes * phase transitions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 12.124, year: 2016

  7. Flexoelectricity: strain gradient effects in ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Ma Wenhui [Department of Physics, Shantou Unversity, Shantou, Guangdong 515063 (China)

    2007-12-15

    Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 {mu} C m{sup -1} for lead zirconate titanate to 100 {mu} C m{sup -1} for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems.

  8. Effect of composition on properties of In2O3-Ga2O3 thin films

    Science.gov (United States)

    Demin, I. E.; Kozlov, A. G.

    2017-06-01

    The In2O3-Ga2O3 mixed oxide polycrystalline thin films with various ratios of components were obtained by pulsed laser deposition. The effect of films composition on surface morphology, electrophysical and gas sensing properties and energies of adsorption and desorption of combustible gases was studied. The films with50%In2O3-50%Ga2O3 composition showed maximum gas response (˜25 times) combined with minimum optimal working temperature (˜530 °C) as compared with the other films. The optical transmittance of the films in visible range was investigated. For 50%In2O3-50%Ga2O3 films, the transmittance is higher in comparison with the other films. The explanation of the dependency of films behaviors on their composition was presented.The In2O3-Ga2O3 films were assumed to have perspectives as gas sensing material for semiconducting gas sensors.

  9. Antimicrobial Carvacrol-Containing Polypropylene Films: Composition, Structure and Function

    Directory of Open Access Journals (Sweden)

    Max Krepker

    2018-01-01

    Full Text Available Significant research has been directed toward the incorporation of bioactive plant extracts or essential oils (EOs into polymers to endow the latter with antimicrobial functionality. EOs offer a unique combination of having broad antimicrobial activity from a natural source, generally recognized as safe (GRAS recognition in the US, and a volatile nature. However, their volatility also presents a major challenge in their incorporation into polymers by conventional high-temperature-processing techniques. Herein, antimicrobial polypropylene (PP cast films were produced by incorporating carvacrol (a model EO or carvacrol, loaded into halloysite nanotubes (HNTs, via melt compounding. We studied the composition-structure-property relationships in these systems, focusing on the effect of carvacrol on the composition of the films, the PP crystalline phase and its morphology and the films’ mechanical and antimicrobial properties. For the first time, molecular dynamics simulations were applied to reveal the complex interactions between the components of these carvacrol-containing systems. We show that strong molecular interactions between PP and carvacrol minimize the loss of this highly-volatile EO during high-temperature polymer processing, enabling semi-industrial scale production. The resulting films exhibit outstanding antimicrobial properties against model microorganisms (Escherichia coli and Alternaria alternata. The PP/(HNTs-carvacrol nanocomposite films, containing the carvacrol-loaded HNTs, display a higher level of crystalline order, superior mechanical properties and prolonged release of carvacrol, in comparison to PP/carvacrol blends. These properties are ascribed to the role of HNTs in these nanocomposites and their effect on the PP matrix and retained carvacrol content.

  10. Nonlinear Analysis of Actuation Performance of Shape Memory Alloy Composite Film Based on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Shuangshuang Sun

    2014-01-01

    Full Text Available The mechanical model of the shape memory alloy (SMA composite film with silicon (Si substrate was established by the method of mechanics of composite materials. The coupled action between the SMA film and Si substrate under thermal loads was analyzed by combining static equilibrium equations, geometric equations, and physical equations. The material nonlinearity of SMA and the geometric nonlinearity of bending deformation were both considered. By simulating and analyzing the actuation performance of the SMA composite film during one cooling-heating thermal cycle, it is found that the final cooling temperature, boundary condition, and the thickness of SMA film have significant effects on the actuation performance of the SMA composite film. Besides, the maximum deflection of the SMA composite film is affected obviously by the geometric nonlinearity of bending deformation when the thickness of SMA film is very large.

  11. Electrochemical deposition of Mg(OH2/GO composite films for corrosion protection of magnesium alloys

    Directory of Open Access Journals (Sweden)

    Fengxia Wu

    2015-09-01

    Full Text Available Mg(OH2/graphene oxide (GO composite film was electrochemical deposited on AZ91D magnesium alloys at constant potential. The characteristics of the Mg(OH2/GO composite film were investigated by scanning electron microscope (SEM, energy-dispersive X-ray spectrometry (EDS, X-ray diffractometer (XRD and Raman spectroscopy. It was shown that the flaky GO randomly distributed in the composite film. Compared with the Mg(OH2 film, the Mg(OH2/GO composite film exhibited more uniform and compact structure. Potentiodynamic polarization tests revealed that the Mg(OH2/GO composite film could significantly improve the corrosion resistance of Mg(OH2 film with an obvious positive shift of corrosion potential by 0.19 V and a dramatic reduction of corrosion current density by more than one order of magnitude.

  12. Mechanical behaviour of composite materials made by resin film infusion

    Directory of Open Access Journals (Sweden)

    Casavola C.

    2010-06-01

    Full Text Available Innovative composite materials are frequently used in designing aerospace, naval and automotive components. In the typical structure of composites, multiple layers are stacked together with a particular sequence in order to give specific mechanical properties. Layers are organized with different angles, different sequences and different technological process to obtain a new and innovative material. From the standpoint of engineering designer it is useful to consider the single layer of composite as macroscopically homogeneous material. However, composites are non homogeneous bodies. Moreover, layers are not often perfectly bonded together and delamination often occurs. Other violations of lamination theory hypotheses, such as plane stress and thin material, are not unusual and in many cases the transverse shear flexibility and the thickness-normal stiffness should be considered. Therefore the real behaviour of composite materials is quite different from the predictions coming from the traditional lamination theory. Due to the increasing structural performance required to innovative composites, the knowledge of the mechanical properties for different loading cases is a fundamental source of concern. Experimental characterization of materials and structures in different environmental conditions is extremely important to understand the mechanical behaviour of these new materials. The purpose of the present work is to characterize a composite material developed for aerospace applications and produced by means of the resin film infusion process (RFI. Different tests have been carried out: tensile, open-hole and filled-hole tensile, compressive, openhole and filled-hole compressive. The experimental campaign has the aim to define mechanical characteristics of this RFI composite material in different conditions: environmental temperature, Hot/Wet and Cold.

  13. Structural, dielectric and ferroelectric properties of (Bi,Na)TiO{sub 3}–BaTiO{sub 3} system studied by high throughput screening

    Energy Technology Data Exchange (ETDEWEB)

    Hayden, Brian E. [Ilika Technologies Plc., Kenneth Dibben House, Enterprise Road, University of Southampton Science Park, Chilworth, Southampton SO16 7NS (United Kingdom); Department of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Yakovlev, Sergey, E-mail: sergey.yakovlev@ilika.com [Ilika Technologies Plc., Kenneth Dibben House, Enterprise Road, University of Southampton Science Park, Chilworth, Southampton SO16 7NS (United Kingdom)

    2016-03-31

    Thin-film materials libraries of the Bi{sub 2}O{sub 3}–Na{sub 2}O–TiO{sub 2}–BaO system in a broad composition range have been deposited in ultra-high vacuum from elemental evaporation sources and an oxygen plasma source. A high throughput approach was used for systematic compositional and structural characterization and the screening of the dielectric and ferroelectric properties. The perovskite (Bi,Na)TiO{sub 3}–BaTiO{sub 3} phase with a Ba concentration near the morphotropic phase boundary (ca. 6 at.%) exhibited a relative dielectric permittivity of 180, a loss tangent of 0.04 and remnant polarization of 19 μC/cm{sup 2}. Compared to published data, observed remnant polarization is close to that known for epitaxially grown films but higher than the values reported for polycrystalline films. The high throughput methodology and systematic nature of the study allowed us to establish the composition boundaries of the phase with optimal dielectric and ferroelectric characteristics. - Highlights: • Bi{sub 2}O{sub 3}–Na{sub 2}O–TiO{sub 2}–BaO high throughput materials library was deposited using PVD method. • Materials were processed from individual molecular beam epitaxy sources of elements. • High throughput approach was used for structural, dielectric and ferroelectric study. • Composition boundaries of perovskite compounds with optimum properties are reported.

  14. Structural, dielectric and ferroelectric properties of (Bi,Na)TiO3–BaTiO3 system studied by high throughput screening

    International Nuclear Information System (INIS)

    Hayden, Brian E.; Yakovlev, Sergey

    2016-01-01

    Thin-film materials libraries of the Bi 2 O 3 –Na 2 O–TiO 2 –BaO system in a broad composition range have been deposited in ultra-high vacuum from elemental evaporation sources and an oxygen plasma source. A high throughput approach was used for systematic compositional and structural characterization and the screening of the dielectric and ferroelectric properties. The perovskite (Bi,Na)TiO 3 –BaTiO 3 phase with a Ba concentration near the morphotropic phase boundary (ca. 6 at.%) exhibited a relative dielectric permittivity of 180, a loss tangent of 0.04 and remnant polarization of 19 μC/cm 2 . Compared to published data, observed remnant polarization is close to that known for epitaxially grown films but higher than the values reported for polycrystalline films. The high throughput methodology and systematic nature of the study allowed us to establish the composition boundaries of the phase with optimal dielectric and ferroelectric characteristics. - Highlights: • Bi 2 O 3 –Na 2 O–TiO 2 –BaO high throughput materials library was deposited using PVD method. • Materials were processed from individual molecular beam epitaxy sources of elements. • High throughput approach was used for structural, dielectric and ferroelectric study. • Composition boundaries of perovskite compounds with optimum properties are reported.

  15. Flexible graphene–PZT ferroelectric nonvolatile memory

    International Nuclear Information System (INIS)

    Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

    2013-01-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

  16. Flexible graphene-PZT ferroelectric nonvolatile memory.

    Science.gov (United States)

    Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-29

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  17. Quantum mechanical studies of complex ferroelectric perovskites

    Science.gov (United States)

    Ramer, Nicholas John

    In many electronic device applications, there is a need to interconvert electrical energy and other types of energy. Ferroelectric materials, which possess a voltage-dependent polarization, can enable this energy conversion process. Because of the broad interest in ferroelectric materials for these devices, there is a critical research effort, both experimental and theoretical, to understand these materials and aid in the development of materials with improved properties. This thesis presents detailed quantum mechanical investigations of the behavior of a complex ferroelectric perovskite under applied stress. In particular, we have chosen to study the solid solution PbZr1-xTix O3 (PZT). Since the study of ferroelectricity involves understanding both its structural and electronic signatures in materials, it has necessitated the development of a novel theoretical technique which improves the accuracy of the pseudopotentials used in our density functional theory calculations as well as a new method for constructing three-dimensional atomistic responses to small amounts of external stress. To examine the material's behavior under larger amounts of stress, we have studied the behavior of a composition of PZT lying near a structural phase boundary. On either side of the phase boundary, the material is characterized by a different polarization direction and may easily be switched between phases by applying external stress. In addition to stress-induced phase transitions, most ferroelectric materials also have composition dependent phase boundaries. Since different compositions of PZT would require increased computational effort, we have formulated an improved virtual crystal approach that makes tractable the study of the entire composition range. Using this method, we have been able to show for the first time via first-principles calculations, a composition dependent phase transition in a ferroelectric material. This thesis has accomplished three important goals: new

  18. Influence of processing parameters on PZT thick films

    International Nuclear Information System (INIS)

    Huang, Oliver; Bandyopadhyay, Amit; Bose, Susmita

    2005-01-01

    We have studied influence of processing parameters on the microstructure and ferroelectric properties of lead zirconate titanate (PZT)-based thick films in the range of 5-25 μm. PZT and 2% La-doped PZT thick films were processed using a modified sol-gel process. In this process, PZT- and La-doped PZT powders were first prepared via sol-gel. These powders were calcined and then used with respective sols to form a slurry. Slurry composition was optimized to spin-coat thick films on platinized Si substrate (Si/SiO 2 /Ti/Pt). Spinning rate, acceleration and slurry deposition techniques were optimized to form thick films with uniform thickness and without any cracking. Increasing solids loading was found to enhance the surface smoothness of the film and decrease porosity. Films were tested for their electrical properties and ferroelectric fatigue response. The maximum polarization obtained was 40 μC/cm 2 at 250 kV/cm for PZT thick film and 30 μC/cm 2 at 450 kV/cm for La-doped PZT thick film. After 10 9 cycles of fatiguing at 35 kHz, La-doped PZT showed better resistance for ferroelectric fatigue compared with un-doped PZT films

  19. Ferroelectric properties of NaNbO3-BaTiO3 thin films deposited on SrRuO3/(001)SrTiO3 substrate by pulsed laser deposition

    International Nuclear Information System (INIS)

    Yamazoe, Seiji; Oda, Shinya; Sakurai, Hiroyuki; Wada, Takahiro; Adachi, Hideaki

    2009-01-01

    (NaNbO 3 ) 1-x (BaTiO 3 ) x (NN-xBT) thin films with low BaTiO 3 (BT) concentrations x (x=0.05 and 0.10) were fabricated on SrRuO 3 /(001)SrTiO 3 (SRO)/(001)STO) substrate by pulsed laser deposition (PLD). X-ray diffraction pattern (XRD) and transmission electron diffraction pattern (TED) showed that NN-0.10BT thin film was epitaxially grown on SRO/(001)STO substrate with a crystallographic relationship of [001] NN-xBT parallel [001] STO . From reciprocal space maps, the lattice parameters of the out-of-plane direction of NN-xBT thin films became larger with an increase in BT concentration, although the lattice parameter of the in-plane was hardly changed by the BT concentration. The value of relative dielectric constant ε r of the NN-xBT thin films were increased with BT concentration. The ε r and the dielectric loss tanδ of NN-0.10BT were 1220 and 0.02 at 1 kHz, respectively. The P-E hysteresis loops of the NN-xBT thin films showed clear ferroelectricity. Although the value of remanent polarization P r decreased with the BT concentration, the behaviors of ε r , P r , and coercive electric field E c of the NN-xBT thin films against the BT concentration accorded with those of NN-xBT ceramics, in which NN-0.10BT ceramics exhibited the largest piezoelectric property. Therefore, the NN-0.10BT thin film is expected to show high piezoelectricity. (author)

  20. Long time relaxation of resistance in La0.8Sr0.2MnO3 ceramics and La0.65Ca0.35 MnO3 films on ferroelectric substrates

    International Nuclear Information System (INIS)

    Medvedev, Yu.V.; Mezin, N.I.; Nikolaenko, Yu.M.; Pigur, A.E.; Shishkova, N.V.; Ishchuk, V.M.; Chukanova, I.N.

    2004-01-01

    Galvanomagnetic properties of La 0.65 Ca 0.35 MnO 3 films with a thickness of 0.2 μm on Pb 2.9 Ba 0.05 Sr 0.05 (Zr 0.4 Ti 0.6 )O 3 ferroelectric ceramics substrates have been investigated. We have discovered the monotonic irreversible increase of the film resistance by 3-5 time of value during several hours after multiple inversion of substrate polarization. The long-time relaxation (LTR) of film resistance is explained by dielecrtrization of film intercrystallite boundaries as a result of oxygen redistribution under action of inhomogeneous mechanical stress. In addition, the LTR of resistance of La 0.8 Sr 0.2 MnO 3 and La 0.6 Sr 0.2 Mn 1.2 O 3 ceramic samples has been investigated under action of different kind of mechanical stress: stretch, compression and hydrostatic press. Time dependence of resistance is described by R 0 +ΔRexp(-t/τ). The magnitude of LTR is 5-10 time greater then fast variation of resistance under action of stress. The sign of ΔR is dependent on the kind of stress. The time constant (τ) has the value of 3-9 hours. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Ferroelectric properties of tungsten bronze morphotropic phase boundary systems

    International Nuclear Information System (INIS)

    Oliver, J.R.; Neurgaonkar, R.R.; Cross, L.E.; Pennsylvania State Univ., University Park, PA

    1989-01-01

    Tungsten bronze ferroelectrics which have a morphotropic phase boundary (MPB) can have a number or enhanced dielectric, piezoelectric, and electrooptic properties compared to more conventional ferroelectric materials. The structural and ferroelectric properties of several MPB bronze systems are presented, including data from sintered and hot-pressed ceramics, epitaxial thin films, and bulk single crystals. Included among these are three systems which had not been previously identified as morphotropic. The potential advantages and limitations of these MPB systems are discussed, along with considerations of the appropriate growth methods for their possible utilization in optical, piezoelectric, or pyroelectric device applications

  2. Transparent megahertz circuits from solution-processed composite thin films.

    Science.gov (United States)

    Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

    2016-04-21

    Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

  3. Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

    Science.gov (United States)

    Srivastava, Subodh; Sharma, S. S.; Sharma, Preetam; Sharma, Vinay; Rajura, Rajveer Singh; Singh, M.; Vijay, Y. K.

    2014-04-01

    In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

  4. Proceedings of the international conference on thin films and applications: book of abstracts

    International Nuclear Information System (INIS)

    2013-01-01

    In the era of miniaturization, the role of thin films is highly significant to achieve smaller devices with higher speed especially in new generation of integrated circuits, sensors, flat panel displays, Micro-Electro-Mechanical Systems (MEMS), biomedical devices, optical instruments and microwave communications. Thin films as a nano-scale dimensional system have great importance to many challenging applications. Biological coatings, clean energy, ferroelectric and piezoelectric thin films, ion beam thin films, magnetic thin films, nanostructured and nano composite coatings, NEMS, sensors, thin film preparation and characterization are the topics covered in this symposium. Papers relevant to INIS are indexed separately

  5. Thermoelectric properties of conducting polyaniline/BaTiO3 nanoparticle composite films

    Science.gov (United States)

    Anno, H.; Yamaguchi, K.; Nakabayashi, T.; Kurokawa, H.; Akagi, F.; Hojo, M.; Toshima, N.

    2011-05-01

    Conducting polyaniline (PANI)/BaTiO3 nanoparticle composite films with different molar ratio values R=1, 5, 10, and 100 have been prepared on a quartz substrate by casting the m-cresol solution of PANI, (±)-10-camphorsulfonic acid (CSA) and BaTiO3 nanoparticle with an average diameter of about 20 nm. The CSA-doped PANI/BaTiO3 composite films were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, and UV-Vis transmission spectroscopy. The Seebeck coefficient and the electrical conductivity of the films with different R values, together with CSA-doped PANI films, were measured in the temperature range from room temperature to ~400 K. The relation between the Seebeck coefficient and the electrical conductivity in the composite films are discussed from a comparison of them with those of CSA-doped PANI films and other PANI composite films.

  6. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  7. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  8. Study optoelectronic properties for polymer composite thick film

    Science.gov (United States)

    Jobayr, Mahmood Radhi; Al Razak, Ali Hussein Abd; Mahdi, Shatha H.; Fadhil, Rihab Nassr

    2018-05-01

    Coupling the epoxy with cadmium oxide particles are important for optical properties that may be affected by various mixing proportions. The aim of this experimental study was to evaluate the effect of different mixing proportions on these properties of reinforced epoxy with cadmium oxide particles. The ultrasonic techniques were used to mix and prepared samples of composites. The surfaces topographic of the 50 µm thick reinforced epoxy films were studied using atomic force microscopy (AFM) and microscopy technique (FTIR) Spectroscopy. AFM imaging and quantitative characterization of the films showed that for all samples the root mean square of the surface roughness increases monotonically with increasing the CdO concentrations (from 0% to 15%). The observed effects of CdO concentrations on surface roughness can be explained by two things: the first reason is that the atoms of additives are combined with the original material to form a new compound that is smoother, more homogeneity and smaller in particle size. The second reason is due to high mixing due to ultrasonic mixing. It is clear also, AFM examination of the prepared samples of reinforced epoxy resin shown that topographical contrast and the identification of small structural details critically depend on hardness of epoxy resin, which in turn depended on the ratio of material (CdO) added. We show that the AFM imaging of the films showed that the mean diameter (104.8nm) of films for all of the samples decreased from 135.50 nm to 83.20 nm with the increase of CdO concentrations.

  9. Composite Films Formed by Cellulose nanocrystals and Latex Nanoparticles: Optical, Structural, and Mechanical Properties

    Science.gov (United States)

    Vollick, Brandon McRae

    This thesis describes the preparation of iridescent, birefringent, composite films composed of cellulose nanocrystals (CNCs), latex nanoparticles (NPs) and a NP crosslinker; hexanediamine (HDA). First, aqueous suspensions were prepared with varying quantities of CNCs, NPs and HDA before equilibrating for one week. The cholesteric (Ch) phase was then cast and dried into a film. The optical, structural and mechanical properties of the film was analyzed. Second, films with identical compositions of CNCs, NPs, and HDA were fabricated in three different ways to yield films of different morphology, (i) fast drying of an isotropic suspension, yielding an isotropic film, (ii) slow drying of an isotropic suspension, yielding a partially Ch films, (iii) slow drying of an equilibrated suspension, yielding a highly Ch film. The optical and mechanical properties of the films was analyzed.

  10. Influences of annealing temperature on characteristics of composite materials consisting of multi-walled carbon nanotubes and Pb(Zr0.52Ti0.48)O3 thin films

    International Nuclear Information System (INIS)

    Kwak, Jin Ho; Han, Jin Kyu; Cho, Sam Yeon; Bu, Sang Don

    2012-01-01

    We report the synthesis and the characterization of composite materials consisting of multi-walled carbon nanotubes and Pb(Zr 0.52 Ti 0.48 )O 3 (CNT-PZT) in a film structure. The CNT-PZT films were prepared by using a sol-gel process, a spin-coating method and a rapid thermal annealing process. CNT bundles in 2-methoxyethanol solution were mixed with a 7-wt% PZT sol-gel solution. The CNT-PZT solution was deposited onto (111) Pt/Ti/SiO 2 /Si substrates by spin-coating at 3000 rpm for 60 s and was then pyrolyzed. The samples were annealed at various temperatures in an oxygen atmosphere for crystallization. The morphological, structural and electrical properties of CNT-PZT composite films were studied with a field-emission scanning electron microscope, X-ray diffraction and polarization-voltage hysteresis loops, respectively. We found that, during the annealing process, the thickness of CNT-PZT films dramatically decrease, especially in the range of 500 to 600 .deg. C, which may be related with the loss of CNTs in that temperature region due to burning. The CNTs also affect the orientation of and the number of defects in the PZT films, which change the ferroelectric properties of the films.

  11. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  12. Preparation of Surlyn films reinforced with cellulose nanofibres and feasibility of applying the transparent composite films for organic photovoltaic encapsulation

    Science.gov (United States)

    Lertngim, Anantaya; Phiriyawirut, Manisara; Wootthikanokkhan, Jatuphorn; Yuwawech, Kitti; Sangkhun, Weradesh; Kumnorkaew, Pisist; Muangnapoh, Tanyakorn

    2017-10-01

    This research concerns the development of Surlyn film reinforced with micro-/nanofibrillated celluloses (MFC) for use as an encapsulant in organic photovoltaic (OPV) cells. The aim of this work was to investigate the effects of fibre types and the mixing methods on the structure-properties of the composite films. Three types of cellulose micro/nanofibrils were prepared: the as-received MFC, the dispersed MFC and the esterified MFC. The fibres were mixed with Surlyn via an extrusion process, using two different mixing methods. It was found that the extent of fibre disintegration and tensile modulus of the composite films prepared by the master-batching process was superior to that of the composite system prepared by the direct mixing method. Using the esterified MFC as a reinforcement, compatibility between polymer and the fibre increased, accompanied with the improvement of the percentage elongation of the Surlyn composite film. The percentage of light transmittance of the Surlyn/MFC films was above 88, regardless of the fibre types and fibre concentrations. The water vapour transmission rate of the Surlyn/esterified MFC film was 65% lower than that of the neat Surlyn film. This contributed to the longer lifetime of the OPV encapsulated with the Surlyn/esterified MFC film.

  13. An Automated Ab Initio Framework for Identifying New Ferroelectrics

    Science.gov (United States)

    Smidt, Tess; Reyes-Lillo, Sebastian E.; Jain, Anubhav; Neaton, Jeffrey B.

    Ferroelectric materials have a wide-range of technological applications including non-volatile RAM and optoelectronics. In this work, we present an automated first-principles search for ferroelectrics. We integrate density functional theory, crystal structure databases, symmetry tools, workflow software, and a custom analysis toolkit to build a library of known and proposed ferroelectrics. We screen thousands of candidates using symmetry relations between nonpolar and polar structure pairs. We use two search strategies 1) polar-nonpolar pairs with the same composition and 2) polar-nonpolar structure type pairs. Results are automatically parsed, stored in a database, and accessible via a web interface showing distortion animations and plots of polarization and total energy as a function of distortion. We benchmark our results against experimental data, present new ferroelectric candidates found through our search, and discuss future work on expanding this search methodology to other material classes such as anti-ferroelectrics and multiferroics.

  14. Ferroelectric switching of elastin

    Science.gov (United States)

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  15. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Xue Wenbin [Key Laboratory for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 (China)]. E-mail: xuewb@bnu.edu.cn

    2006-07-15

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.

  16. Functional chitosan-based grapefruit seed extract composite films for applications in food packaging technology

    International Nuclear Information System (INIS)

    Tan, Y.M.; Lim, S.H.; Tay, B.Y.; Lee, M.W.; Thian, E.S.

    2015-01-01

    Highlights: • Chitosan-based grapefruit seed extract (GFSE) films were solution casted. • GFSE was uniformly dispersed within all chitosan film matrices. • All chitosan-based composite films showed remarkable transparency. • Increasing amounts of GFSE incorporated increased the elongation at break of films. • Chitosan-based GFSE composite films inhibited the proliferation of fungal growth. - Abstract: Chitosan-based composite films with different amounts of grapefruit seed extract (GFSE) (0.5, 1.0 and 1.5% v/v) were fabricated via solution casting technique. Experimental results showed that GFSE was uniformly dispersed within all chitosan film matrices. The presence of GFSE made the films more amorphous and tensile strength decreased, while elongation at break values increased as GFSE content increased. Results from the measurement of light transmission revealed that increasing amounts of GFSE (from 0.5 to 1.5% v/v) did not affect transparency of the films. Furthermore, packaging of bread samples with chitosan-based GFSE composite films inhibited the proliferation of fungal growth as compared to control samples. Hence, chitosan-based GFSE composite films have the potential to be a useful material in the area of food technology

  17. Functional chitosan-based grapefruit seed extract composite films for applications in food packaging technology

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Y.M. [Department of Mechanical Engineering, National University of Singapore (Singapore); Lim, S.H.; Tay, B.Y. [Forming Technology Group, Singapore Institute of Manufacturing Technology (Singapore); Lee, M.W. [Food Innovation and Resource Centre, Singapore Polytechnic (Singapore); Thian, E.S., E-mail: mpetes@nus.edu.sg [Department of Mechanical Engineering, National University of Singapore (Singapore)

    2015-09-15

    Highlights: • Chitosan-based grapefruit seed extract (GFSE) films were solution casted. • GFSE was uniformly dispersed within all chitosan film matrices. • All chitosan-based composite films showed remarkable transparency. • Increasing amounts of GFSE incorporated increased the elongation at break of films. • Chitosan-based GFSE composite films inhibited the proliferation of fungal growth. - Abstract: Chitosan-based composite films with different amounts of grapefruit seed extract (GFSE) (0.5, 1.0 and 1.5% v/v) were fabricated via solution casting technique. Experimental results showed that GFSE was uniformly dispersed within all chitosan film matrices. The presence of GFSE made the films more amorphous and tensile strength decreased, while elongation at break values increased as GFSE content increased. Results from the measurement of light transmission revealed that increasing amounts of GFSE (from 0.5 to 1.5% v/v) did not affect transparency of the films. Furthermore, packaging of bread samples with chitosan-based GFSE composite films inhibited the proliferation of fungal growth as compared to control samples. Hence, chitosan-based GFSE composite films have the potential to be a useful material in the area of food technology.

  18. Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

    International Nuclear Information System (INIS)

    Xue Wenbin

    2006-01-01

    Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed

  19. Proceedings of the 8th International Symposium on Applications of Ferroelectrics

    Science.gov (United States)

    Liu, M.; Safari, A.; Kingon, A.; Haertling, G.

    1993-02-01

    The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.

  20. Polymer−metal organic framework composite films as affinity layer for capacitive sensor devices

    NARCIS (Netherlands)

    Sachdeva, S.; Gravesteijn, Dirk J; Soccol, D.; Kapteijn, F.; Sudhölter, E.J.R.; Gascon, J.; Smet, de L.C.P.M.

    2016-01-01

    We report a simple method for sensor development using polymer-MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer. Sensing

  1. Polymer-metal organic framework composite films as affinity layer for capacitive sensor devices

    NARCIS (Netherlands)

    Sachdeva, Sumit; Soccol, Dimitri; Gravesteijn, Dirk J.; Kapteijn, Freek; Sudhölter, E.J.R.; Gascon, Jorge; Smet, de L.C.P.M.

    2016-01-01

    We report a simple method for sensor development using polymer-
    MOF composite films. Nanoparticles of NH2-MIL-53(Al) dispersed in a Matrimid
    polyimide were applied as a thin film on top of capacitive sensor devices with planar electrodes. These drop-cast films act as an affinity layer.

  2. Tribological behavior of in situ Ag nanoparticles/polyelectrolyte composite molecular deposition films

    International Nuclear Information System (INIS)

    Guo Yanbao; Wang Deguo; Liu Shuhai

    2010-01-01

    Multilayer polyelectrolyte films containing silver ions were obtained by molecular deposition method on a glass plate or a quartz substrate. The in situ Ag nanoparticles were synthesized in the multilayer polyelectrolyte films which were put into fresh NaBH 4 aqueous solution. The structure and surface morphology of composite molecular deposition films were observed by UV-vis spectrophotometer, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Tribological characteristic was investigated by AFM and micro-tribometer. It was found that the in situ Ag nanoparticles/polyelectrolyte composite molecular deposition films have lower coefficient of friction and higher anti-wear life than pure polyelectrolyte molecular deposition films.

  3. Nickel coated flyash (Ni-FAC) cenosphere doped polyaniline composite film for electromagnetic shielding

    International Nuclear Information System (INIS)

    Bora, Pritom J; Ramamurthy, Praveen C; Madras, Giridhar; Vinoy, K J; Kishore

    2015-01-01

    A solid waste material fly ash cenosphere (FAC) was nickel coated and polyaniline in situ polymerized at −30 ± 2 °C in nitrogen atmosphere. A thin film of this composite material was prepared by solution processing and surface morphology/topography was studied. High electromagnetic shielding effectiveness (SE) was obtained for this film; 59 ± 4 μm and 133 ± 4 μm films show an average of 38 and 60 dB SE, respectively, in the frequency range 8.2–12.4 GHz (X-band). Unlike PANI film, the SE of these composite films is high at high frequency. The presence of magneto dielectric microsphere (Ni-FAC) increases the heterogeneity of the composite film in an efficient way for EMI shielding by changing film topography and increasing ac conductivity and permeability. (paper)

  4. Modeling and analysis of film composition on mechanical properties of maize starch based edible films.

    Science.gov (United States)

    Prakash Maran, J; Sivakumar, V; Thirugnanasambandham, K; Kandasamy, S

    2013-11-01

    The present study investigates the influence of composition (content of maize starch (1-3 g), sorbitol (0.5-1.0 ml), agar (0.5-1.0 g) and tween-80 (0.1-0.5 ml)) on the mechanical properties (tensile strength, elongation, Young's modulus, puncture force and puncture deformation) of the maize starch based edible films using four factors with three level Box-Behnken design. The edible films were obtained by casting method. The results showed that, tween-80 increases the permeation of sorbitol in to the polymer matrix. Increasing concentration of sorbitol (hydrophilic nature and plasticizing effect of sorbitol) decreases the tensile strength, Young's modulus and puncture force of the films. The results were analyzed by Pareto analysis of variance (ANOVA) and second order polynomial models were obtained for all responses with high R(2) values (R(2)>0.95). 3D response surface plots were constructed to study the relationship between process variables and the responses. Copyright © 2013 Elsevier B.V. All rights reserved.

  5. Influence of high loading of cellulose nanocrystals in polyacrylonitrile composite films

    Science.gov (United States)

    Jeffrey Luo; Huibin Chang; Amir A. Bakhtiary Davijani; H. Clive Liu; Po-Hsiang Wang; Robert J. Moon; Satish Kumar

    2017-01-01

    Polyacrylonitrile-co-methacrylic acid (PAN-co-MAA) and cellulose nanocrystal (CNC) composite films were produced with up to 40 wt% CNC loading through the solution casting method. The rheological properties of the solution/suspensions and the structural, optical, thermal, and mechanical properties of the resulting films were investigated. The viscosity of the composite...

  6. Electrochemical synthesis of poly(pyrrole-co-o-anisidine)/chitosan composite films

    Science.gov (United States)

    Yalçınkaya, Süleyman; Çakmak, Didem

    2017-05-01

    In this study, poly(pyrrole-co-o-anisidine)/chitosan composite films were electrochemically synthesized in various monomers feed ratio (pyrrole: o-anisidine; 9:1, 7:3, 1:1, 3:7 and 1:9) of pyrrole and o-anisidine on the platinum electrode. Electrochemical synthesis of the composite films was carried out via cyclic voltammetry technique. They were characterized by FT-IR, cyclic voltammetry, SEM micrographs, digital images, TGA and DSC techniques. The SEM results indicated that the particle size of the composite decreased with increasing o-anisidine ratio and the films became more likely to be smooth morphology. The TGA results proved that the film of the composite with 1:1 ratio showed highest final degradation temperature and lowest weight loss (83%) compared to copolymer and 9:1 1:9 composite films. The 1:1 composite film had higher thermal stability than copolymer and the other composite films (9:1 1:9). Meanwhile, electrochemical studies exhibited that the 1/9 composite film had good electrochemical stability as well.

  7. Effect of composition on SILAR deposited CdxZn1-xS thin films

    Science.gov (United States)

    Ashith V., K.; Gowrish Rao, K.

    2018-04-01

    In the group of II-VI compound semiconductor, cadmium zinc sulphide (CdxZn1-xS) thin films have broad application in photovoltaic, optoelectronic devices etc. For heterojunction aspects, CdxZn1-xS thin film can be used as heterojunction partner for CdTe as the absorber layer. In this work, CdZnS thin films prepared on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method by varying the composition. The XRD patterns of deposited films showed polycrystalline with the hexagonal phase. The crystallite size of the films was estimated from W-H plot. The bond length of the film varied w.r.to the composition of the CdxZn1-xS films. The urbach energy of the films was calcualted from absorbance data.

  8. Properties of plasticized composite films prepared from nanofibrillated cellulose and birch wood xylan

    DEFF Research Database (Denmark)

    Hansen, Natanya Majbritt Louie; Blomfeldt, Thomas O. J.; Hedenqvist, Mikael S.

    2012-01-01

    was combined with nanofibrillated cellulose (NFC) and films were cast with and without glycerol, sorbitol or methoxypolyethylene glycol (MPEG) as plasticizers. Microscopy revealed some NFC agglomeration in the composite films as well as a layered nanocellulose structure. Equilibrium moisture content...... in plasticized films increased with glycerol content but was independent of xylan:NFC ratio in unplasticized films. Sorbitol- and MPEG-plasticized films showed equilibrium moisture contents of approximately 10 wt% independent of plasticizer content. Tensile testing revealed increases in tensile strength...... with increased NFC content in the xylan:NFC composition range from 50:50 to 80:20 and plasticizer addition generally provided less brittle films. The oxygen permeability of unplasticized xylan-NFC films fell into a range which was similar to that for previously measured pure NFC films and was statistically...

  9. Magnetic studies of Fe-Y compositionally modulated thin films

    International Nuclear Information System (INIS)

    Badia, F.; Ferrater, C.; Lousa, A.; Martinez, B.; Labarta, A.; Tejada, J.

    1990-01-01

    Compositionally modulated thin films of Y/Fe have been studied by using SQUID magnetometry. Samples were grown by electron-beam evaporation onto Kapton substrates. In the low applied field regime, the samples show irreversible behavior when they are submitted to ZFC-FC magnetization processes, increasing the irreversibility zone as the thickness of the Fe layers increases. In the high applied magnetic field regime (H≥10 000 Oe), samples show ferromagnetic behavior. The temperature dependence of the saturation magnetization has been studied, and it was found that both spin-wave excitations and Stoner excitations occur at temperatures higher than 40 K, and a marked deviation from the T 3/2 law was noted below 30 K

  10. Synthesis of ferroelectric nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Roervik, Per Martin

    2008-12-15

    The increasing miniaturization of electric and mechanical components makes the synthesis and assembly of nanoscale structures an important step in modern technology. Functional materials, such as the ferroelectric perovskites, are vital to the integration and utility value of nanotechnology in the future. In the present work, chemical methods to synthesize one-dimensional (1D) nanostructures of ferroelectric perovskites have been studied. To successfully and controllably make 1D nanostructures by chemical methods it is very important to understand the growth mechanism of these nanostructures, in order to design the structures for use in various applications. For the integration of 1D nanostructures into devices it is also very important to be able to make arrays and large-area designed structures from the building blocks that single nanostructures constitute. As functional materials, it is of course also vital to study the properties of the nanostructures. The characterization of properties of single nanostructures is challenging, but essential to the use of such structures. The aim of this work has been to synthesize high quality single-crystalline 1D nanostructures of ferroelectric perovskites with emphasis on PbTiO3 , to make arrays or hierarchical nanostructures of 1D nanostructures on substrates, to understand the growth mechanisms of the 1D nanostructures, and to investigate the ferroelectric and piezoelectric properties of the 1D nanostructures. In Paper I, a molten salt synthesis route, previously reported to yield BaTiO3 , PbTiO3 and Na2Ti6O13 nanorods, was re-examined in order to elucidate the role of volatile chlorides. A precursor mixture containing barium (or lead) and titanium was annealed in the presence of NaCl at 760 degrees Celsius or 820 degrees Celsius. The main products were respectively isometric nanocrystalline BaTiO3 and PbTiO3. Nanorods were also detected, but electron diffraction revealed that the composition of the nanorods was

  11. Superhydrophobicity and regeneration of PVDF/SiO2 composite films

    Science.gov (United States)

    Liu, Tao; Li, Xianfeng; Wang, Daohui; Huang, Qinglin; Liu, Zhen; Li, Nana; Xiao, Changfa

    2017-02-01

    Superhydrophobicity of polymers is easily destroyed by careless touching due to the softness of microstructures. In this study, based on a well-constructed polyvinylidene fluoride (PVDF) surface, a novel superhydrophobic PVDF/SiO2 composite film was fabricated by adding hydrophobic SiO2 nanoparticle and solvent into a coagulation bath. The water contact angle of the composite film reached 162.3° and the sliding angle was as low as 1.5°. More importantly, the composite film could be regenerated only through immersing the composite film in the designed regeneration agent. The composition of the designed regeneration agent ensured that SiO2 nanoparticles were firmly adhered on the film surface even under the ultrasonic cleaning. Hence, the superhydrophobicity and self-cleaing property could be regenerated and maintained effectively, and moreover, these propeties could resist a proper pressure. In addition, after many rubbing-regenerating cycles, the regeneration method was still valid.

  12. Room temperature pulsed laser deposition of Si{sub x} C thin films in different compositions

    Energy Technology Data Exchange (ETDEWEB)

    Hanyecz, I.; Budai, J. [University of Szeged, Department of Optics and Quantum Electronics, P.O. Box 406, Szeged (Hungary); Oszko, A. [University of Szeged, Department of Solid State and Radiochemistry, P.O. Box 168, Szeged (Hungary); Szilagyi, E. [KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, Budapest (Hungary); Toth, Z. [Research Group on Laser Physics of the Hungarian Academy of Sciences, P.O. Box 406, Szeged (Hungary)

    2010-09-15

    Amorphous silicon-carbon alloy films in different compositions were prepared by pulsed laser deposition from two-component targets containing pure silicon and carbon parts. The silicon-carbon ratio in the films was varied by adjusting the number of laser shots on the constituent silicon and carbon targets. The composition, optical properties, thickness, and bonding structure of the films were determined by backscattering spectrometry, spectroscopic ellipsometry, and X-ray photoelectron spectroscopy, respectively. Backscattering spectrometry data were used to determine the deposition rate of silicon and carbon. This enabled the calculation of the number of the shots onto each target to reach a predefined composition. As the film composition changed from carbon to silicon, it was shown that the microscopic and macroscopic properties of the films also changed from a diamond-like carbon phase to an amorphous silicon phase via graphite- and silicon-carbide-like composite. (orig.)

  13. Composite films from pectin and fish skin gelatin or soybean flour protein.

    Science.gov (United States)

    Liu, LinShu; Liu, Cheng-Kung; Fishman, Marshall L; Hicks, Kevin B

    2007-03-21

    Composite films were prepared from pectin and fish skin gelatin (FSG) or pectin and soybean flour protein (SFP). The inclusion of protein promoted molecular interactions, resulting in a well-organized homogeneous structure, as revealed by scanning electron microscopy and fracture-acoustic emission analysis. The resultant composite films showed an increase in stiffness and strength and a decrease in water solubility and water vapor transmission rate, in comparison with films cast from pectin alone. The composite films inherited the elastic nature of proteins, thus being more flexible than the pure pectin films. Treating the composite films with glutaraldehyde/methanol induced chemical cross-linking with the proteins and reduced the interstitial spaces among the macromolecules and, consequently, improved their mechanical properties and water resistance. Treating the protein-free pectin films with glutaraldehyde/methanol also improved the Young's modulus and tensile strength, but showed little effect on the water resistance, because the treatment caused only dehydration of the pectin films and the dehydration is reversible. The composite films were biodegradable and possessed moderate mechanical properties and a low water vapor transmission rate. Therefore, the films are considered to have potential applications as packaging or coating materials for food or drug industries.

  14. Enhancement of polar crystalline phase formation in transparent PVDF-CaF{sub 2} composite films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sang Goo; Ha, Jong-Wook, E-mail: jongwook@krict.re.kr; Sohn, Eun-Ho; Park, In Jun; Lee, Soo-Bok

    2016-12-30

    Highlights: • The crystalline phase in transparent PVDF-CaF{sub 2} composite films was investigated. • CaF{sub 2} promoted the formation of polar crystalline phases in PVDF matrix. • Ordered γ-phase was obtained by thermal treatment of as-cast films at the vicinity of its melting temperature. - Abstract: We consider the influence of calcium fluoride (CaF{sub 2}) nanoparticles on the crystalline phase formation of poly(vinylidene fluoride) (PVDF) for the first time. The transparent PVDF-CaF{sub 2} composite films were prepared by casting on PET substrates using N,N-dimethylacetamide (DMAc) as a solvent. It was found that CaF{sub 2} promoted the formation of polar crystalline phase of PVDF in composites, whereas nonpolar α-phase was dominant in the neat PVDF film prepared at the same condition. The portion of polar crystalline phase increased in proportional to the weight fraction of CaF{sub 2} in the composite films up to 10 wt%. Further addition of CaF{sub 2} suppressed completely the α-phase formation. Polar crystalline phase observed in as-cast composite films was a mixture of β- and γ-polymorph structures. It was also shown that much ordered γ-phase could be obtained through thermal treatment of as-cast PVDF-CaF{sub 2} composite film at the temperatures above the melting temperature of the composite films, but below that of γ-phase.

  15. Composite film fabricated on biomedical material with corona streamer plasma processing to mitigate bacterial adhesion

    Science.gov (United States)

    Alhamarneh, Ibrahim; Pedrow, Patrick; Eskhan, Asma; Abu-Lail, Nehal

    2011-10-01

    Composite films might control bacterial adhesion and concomitant biofouling that afflicts biomedical materials. Different size molecules of polyethylene glycol (PEG) with nominal molecular weights 600, 2000, and 20000 g/mol were used to synthesize composite films with plasma processing and dip-coating procedures on surgical-grade 316L stainless steel. Before dip-coating, the substrate was pre-coated with plasma-polymerized di(ethylene glycol) vinyl ether (pp-EO2V) in an atmospheric pressure corona streamer plasma reactor. The PEG dip-coating step followed immediately in the same chamber due to the finite lifetime of radicals associated with freshly deposited pp-EO2V. Morphology of the composite film was investigated with an ESEM. FTIR confirmed incorporation of pp-EO2V and PEG species into the composite film. More investigations on the composite film were conducted by XPS measurements. Adhesion of the composite film was evaluated with a standard peel-off test. Stability of the composite film in buffer solution was evaluated by AFM. AFM was also used to measure the film roughness and thickness. Polar and non-polar contact angle measurements were included.

  16. Structural Consequences of Ferroelectric Nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

    2011-12-31

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  17. Synthesis and characterization of polyaniline/activated carbon composites and preparation of conductive films

    International Nuclear Information System (INIS)

    Zengin, Huseyin; Kalayci, Guellue

    2010-01-01

    Polyaniline was synthesized via polyaniline/activated carbon (PANI/AC) composites by in situ polymerization and ex situ solution mixing. PANI and PANI/AC composite films were prepared by drop-by-drop and spin coating methods. The electrical conductivities of HCl doped PANI film and PANI/AC composite films were measured according to the standard four-point-probe technique. The composite films exhibited an increase in electrical conductivity over neat PANI. PANI and PANI/AC composites were investigated by spectroscopic methods including UV-vis, FTIR and photoluminescence. UV-vis and FTIR studies showed that AC particles affect the quinoid units along the polymer backbone and indicate strong interactions between AC particles and quinoidal sites of PANI. The photoluminescence properties of PANI and PANI/AC composites were studied and the photoluminescence intensity of PANI/AC composites was higher than that of neat PANI. The increase of conductivity of PANI/AC composites may be partially due to the doping or impurity effect of AC, where the AC competes with chloride ions. The amount of weight loss and the thermostability of PANI and PANI/AC composites were determined from thermogravimetric analysis. The morphology of particles and films were examined by a scanning electron microscope (SEM). SEM measurements indicated that the AC particles were well dispersed and isolated in composite films.

  18. Investigation of the switching characteristics in ferroelectrics by first-order reversal curve diagrams

    International Nuclear Information System (INIS)

    Stancu, Alexandru; Mitoseriu, Liliana; Stoleriu, Laurentiu; Piazza, Daniele; Galassi, Carmen; Ricinschi, Dan; Okuyama, Masanori

    2006-01-01

    First-order reversal curves (FORC) diagrams are proposed for describing the switching properties in ferroelectric materials. The method is applied for Pb(Zr,Ti)O 3 (PZT) ferroelectric ceramics and films with different P(E) hysteresis and microstructural characteristics. The separation of the reversible and irreversible contributions to the ferroelectric polarization is explained in terms of microstructural characteristics of the investigated samples. The influence of parameters as field frequency, crystallite orientation, ferroelectric fatigue and porosity degree on the FORC diagrams is discussed

  19. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

  20. A hybrid ferroelectric-flash memory cells

    Science.gov (United States)

    Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

    2014-09-01

    A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

  1. Investigation of the epitaxial growth of Pb(Zr{sub 0,52}Ti{sub 0,48})O{sub 3} thin films and their application in ferroelectric superconducting field effect transistors; Untersuchung des epitaktischen Wachstums duenner Pb(Zr{sub 0,52}Ti{sub 0,48})O{sub 3}-Schichten und ihre Anwendung in ferroelektrischen supraleitenden Feldeffektransistoren

    Energy Technology Data Exchange (ETDEWEB)

    Aidam, R

    1999-02-01

    The influences of the polarization of ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) films on the properties of YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) films were investigated in ferroelectric superconducting field effect transistors (FSuFETs). First the epitaxial growth of PZT films deposited by reactive sputtering in an argon/oxygen atmosphere was investigated. SrTiO{sub 3} single crystals and YBCO thin films proved as suitable substrates. The lead content of the PZT films depended sensitively on the deposition temperature T{sub s} and the gas pressure. By using a high pressure of 0.26 mbar the correct stoichiometry could be achieved up to an maximum T{sub s} of 580 C. Above a minimum T{sub s} of 540 C the ferroelectric perovskite structure grew. In the optimum temperature range between 560 C and 580 C the films grew with a minimum mosaic spread of {delta}{omega} < 0.3 and a small amount of less than 1% of paraelectric phase. The best ferroelectric properties could be obtained for films with the highest degree of epitaxy and the correct stoichiometry. The maximum remanent polarization amounted P{sub r} = 61 {mu}C/cm{sup 2} and the coercive field E{sub C} was 150 kV/cm at 77 K. The breakdown field was four to five times larger than E{sub C}. Fatigue studies revealed a loss of switchable polarization of 30% after 10{sup 8} cycles at 77 K, whereas loss of retention and the effect of ageing were negligible. During the process of oxidation of the heterostructure at 400 C and an oxygen pressure of 800 mbar a reaction at the PZT/YBCO interface was observed, which lead to a degradation of the transport properties of the superconductor. This reaction could be avoided by a thin SrTiO{sub 3} buffer layer without disturbing the ferroelectric hysteresis essentially.

  2. Effect of cross linking of PVA/starch and reinforcement of modified barley husk on the properties of composite films.

    Science.gov (United States)

    Mittal, Aanchal; Garg, Sangeeta; Kohli, Deepak; Maiti, Mithu; Jana, Asim Kumar; Bajpai, Shailendra

    2016-10-20

    Barley husk (BH) was graft copolymerized by palmitic acid. The crystalline behavior of BH decreased after grafting. Poly vinyl alcohol (PVA)/starch (St) blend film, urea formaldehyde cross linked PVA/St films and composite films containing natural BH, grafted BH were prepared separately. The effect of urea/starch ratio, content of BH and grafted BH on the mechanical properties, water uptake (%), and biodegradability of the composite films was observed. With increase in urea: starch ratio from 0 to 0.5 in the blend, tensile strength of cross linked film increased by 40.23% compared to the PVA/St film. However, in grafted BH composite film, the tensile strength increased by 72.4% than PVA/St film. The degradation rate of natural BH composite film was faster than PVA/St film. Various films were characterized by SEM, FT-IR and thermal analysis. Copyright © 2016 Elsevier Ltd. All rights reserved.

  3. Comparative study of effects of Mo and W dopants on the ferroelectric property of Pb(Zr0.3Ti0.7) thin films

    International Nuclear Information System (INIS)

    Zhang Zhen; Wang Shijie; Lu Li; Shu Chang; Song Wendong; Wu Ping

    2008-01-01

    Pb(Zr 0.3 Ti 0.7 )O 3 thin films, respectively, doped with 1 mol% W and 1 mol% Mo have been deposited on the LaNiO 3 bottom electrodes using pulse laser deposition. The x-ray diffraction analyses revealed that both dopants induced (1 1 0) orientation of the perovskite structures. Compared with the undoped PZT films, the doped PZT films showed smoother and denser surfaces. The XPS measurements indicated that W possessed a valence state of +6 in the PZTW films, but Mo showed mixed valence states of +4 and +6. The hysteresis loops and fatigue results of the undoped, the W-doped (PZTW) and the Mo-doped PZT (PZTM) films were obtained. While both the two doped films revealed better fatigue behaviour than undoped PZT, the PZTW film had a slow fatigue rate in comparison with the PZTM film, which is consistent with our previous theoretical predictions

  4. Electrophoretic deposition of composite halloysite nanotube–hydroxyapatite–hyaluronic acid films

    Energy Technology Data Exchange (ETDEWEB)

    Deen, I. [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L7 (Canada); Zhitomirsky, I., E-mail: zhitom@mcmaster.ca [Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L7 (Canada)

    2014-02-15

    Highlights: ► Composite halloysite nanotubes–hydroxyapatite–hyaluronic acid films were prepared. ► Electrophoretic deposition method was used for deposition. ► Natural hyaluronic acid was used as a dispersing, charging and film forming agent. ► Film composition and deposition yield can be varied. ► The films can be used for biomedical implants with controlled release of drugs. -- Abstract: Electrophoretic deposition method has been developed for the deposition of biocomposite films containing halloysite nanotubes (HNTs), hydroxyapatite (HA) and hyaluronic acid. The method is based on the use of natural hyaluronate biopolymer as a dispersing and charging agent for HNT and HA and film forming agent for the fabrication of the composite films. The deposition kinetics was studied by the quartz crystal microbalance method. The composite films were studied by X-ray diffraction, thermogravimetric analysis, differential thermal analysis and electron microscopy. The composite films are promising materials for the fabrication of biomedical implants with advanced functional properties.

  5. Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

    International Nuclear Information System (INIS)

    Williams, D.B.; Watanabe, M.; Papworth, A.J.; Li, J.C.

    2003-01-01

    Compositional variations in thin films can introduce lattice-parameter changes and thus create stresses, in addition to the more usual stresses introduced by substrate-film mismatch, differential thermal expansion, etc. Analytical electron microscopy comprising X-ray energy-dispersive spectrometry within a probe-forming field-emission gun scanning transmission electron microscope (STEM) is one of the most powerful methods of composition measurement on the nanometer scale, essential for thin-film analysis. Recently, with the development of improved X-ray collection efficiencies and quantitative computation methods it has proved possible to map out composition variations in thin films with a spatial resolution approaching 1-2 nm. Because the absorption of X-rays is dependent on the film thickness, concurrent composition and film thickness determination is another advantage of X-ray microanalysis, thus correlating thickness and composition variations, either of which may contribute to stresses in the film. Specific phenomena such as segregation to interfaces and boundaries in the film are ideally suited to analysis by X-ray mapping. This approach also permits multiple boundaries to be examined, giving some statistical certainty to the analysis particularly in nano-crystalline materials with grain sizes greater than the film thickness. Boundary segregation is strongly affected by crystallographic misorientation and it is now possible to map out the orientation between many different grains in the (S)TEM

  6. Electrophoretic deposition of composite halloysite nanotube–hydroxyapatite–hyaluronic acid films

    International Nuclear Information System (INIS)

    Deen, I.; Zhitomirsky, I.

    2014-01-01

    Highlights: ► Composite halloysite nanotubes–hydroxyapatite–hyaluronic acid films were prepared. ► Electrophoretic deposition method was used for deposition. ► Natural hyaluronic acid was used as a dispersing, charging and film forming agent. ► Film composition and deposition yield can be varied. ► The films can be used for biomedical implants with controlled release of drugs. -- Abstract: Electrophoretic deposition method has been developed for the deposition of biocomposite films containing halloysite nanotubes (HNTs), hydroxyapatite (HA) and hyaluronic acid. The method is based on the use of natural hyaluronate biopolymer as a dispersing and charging agent for HNT and HA and film forming agent for the fabrication of the composite films. The deposition kinetics was studied by the quartz crystal microbalance method. The composite films were studied by X-ray diffraction, thermogravimetric analysis, differential thermal analysis and electron microscopy. The composite films are promising materials for the fabrication of biomedical implants with advanced functional properties

  7. Elastic Moduli of Nanoparticle-Polymer Composite Thin Films via Buckling on Elastomeric Substrates

    Science.gov (United States)

    Yuan, Hongyi; Karim, Alamgir; University of Akron Team

    2011-03-01

    Polymeric thin films find applications in diverse areas such as coatings, barriers and packaging. The dispersion of nanoparticles into the films was proven to be an effective method to generate tunable properties, particularly mechanical strength. However, there are very few methods for mechanical characterization of the composite thin films with high accuracy. In this study, nanometric polystyrene and polyvinyl alcohol films with uniformly dispersed cobalt and Cloisite nanoparticles at varying concentrations were synthesized via flow-coating and then transferred to crosslinked polydimethylsiloxane (PDMS) flexible substrates. The technique of Strain-Induced Elastic Buckling Instability for Mechanical Measurements (SIEBIMM) was employed to determine the elastic moduli of the films, which were calculated from the buckling patterns generated by applying compressive stresses. Results on moduli of films as a function of the concentrations of nanoparticles and the thicknesses of the composite films will be presented. *Corresponding author: alamgir@uakron.edu

  8. Molecular dynamics simulations of ferroelectric domain formation by oxygen vacancy

    Science.gov (United States)

    Zhu, Lin; You, Jeong Ho; Chen, Jinghong; Yeo, Changdong

    2018-05-01

    An oxygen vacancy, known to be detrimental to ferroelectric properties, has been investigated numerically for the potential uses to control ferroelectric domains in films using molecular dynamics simulations based on the first-principles effective Hamiltonian. As an electron donor, an oxygen vacancy generates inhomogeneous electrostatic and displacement fields which impose preferred polarization directions near the oxygen vacancy. When the oxygen vacancies are placed at the top and bottom interfaces, the out-of-plane polarizations are locally developed near the interfaces in the directions away from the interfaces. These polarizations from the interfaces are in opposite directions so that the overall out-of-plane polarization becomes significantly reduced. In the middle of the films, the in-plane domains are formed with containing 90° a 1/a 2 domain walls and the films are polarized along the [1 1 0] direction even when no electric field is applied. With oxygen vacancies placed at the top interface only, the films exhibit asymmetric hysteresis loops, confirming that the oxygen vacancies are one of the possible sources of ferroelectric imprint. It has been qualitatively demonstrated that the domain structures in the imprint films can be turned on and off by controlling an external field along the thickness direction. This study shows qualitatively that the oxygen vacancies can be utilized for tuning ferroelectric domain structures in films.

  9. Interrelationship between flexoelectricity and strain gradient elasticity in ferroelectric nanofilms: A phase field study

    Science.gov (United States)

    Jiang, Limei; Xu, Xiaofei; Zhou, Yichun

    2016-12-01

    With the development of the integrated circuit technology and decreasing of the device size, ferroelectric films used in nano ferroelectric devices become thinner and thinner. Along with the downscaling of the ferroelectric film, there is an increasing influence of two strain gradient related terms. One is the strain gradient elasticity and the other one is flexoelectricity. To investigate the interrelationship between flexoelectricity and strain gradient elasticity and their combined effect on the domain structure in ferroelectric nanofilms, a phase field model of flexoelectricity and strain gradient elasticity on the ferroelectric domain evolution is developed based on Mindlin's theory of strain-gradient elasticity. Weak form is derived and implemented in finite element formulations for numerically solving the model equations. The simulation results show that upper bounds for flexoelectric coefficients can be enhanced by increasing strain gradient elasticity coefficients. While a large flexoelectricity that exceeds the upper bound can induce a transition from a ferroelectric state to a modulated/incommensurate state, a large enough strain gradient elasticity may lead to a conversion from an incommensurate state to a ferroelectric state. Strain gradient elasticity and the flexoelectricity have entirely opposite effects on polarization. The observed interrelationship between the strain gradient elasticity and flexoelectricity is rationalized by an analytical solution of the proposed theoretical model. The model proposed in this paper could help us understand the mechanism of phenomena observed in ferroelectric nanofilms under complex electromechanical loads and provide some guides on the practical application of ferroelectric nanofilms.

  10. The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films

    International Nuclear Information System (INIS)

    Li Jianjun; Li Ping; Zhang Guojun; Yu Jun; Wu Yunyi; Wen Xinyi

    2011-01-01

    A series of PbZr 0.58 Ti 0.42 O 3 (PZT) thin films with various Bi 3.25 La 0.75 Ti 3 O 12 (BLT) buffer layer thicknesses were deposited on Pt/TiO 2 /SiO 2 /p-Si(100) substrates by RF magnetron sputtering. The X-ray diffraction measurements of PZT film and PZT/BLT multilayered films illustrate that the pure PZT film shows (111) preferential orientation, and the PZT/BLT films show (110) preferential orientation with increasing thickness of the BLT layer. There are no obvious diffraction peaks for the BLT buffer layer in the multilayered films, for interaction effect between the bottom BLT and top PZT films during annealing at the same time. From the surface images of field-emission scanning electron microscope, there are the maximum number of largest-size grains in PZT/BLT(30 nm) film among all the samples. The growth direction and grain size have significant effects on ferroelectric properties of the multilayered films. The fatigue characteristics of PZT and PZT/BLT films suggest that 30-nm-thick BLT is just an effective buffer layer enough to alleviate the accumulation of oxygen vacancies near the PZT/BLT interface. The comparison of these results with that of PZT/Pt/TiO 2 /SiO 2 /p-Si(100) basic structured film suggests that the buffer layer with an appropriate thickness can improve the ferroelectric properties of multilayered films greatly.

  11. Strong composite films with layered structures prepared by casting silk fibroin-graphene oxide hydrogels

    Science.gov (United States)

    Huang, Liang; Li, Chun; Yuan, Wenjing; Shi, Gaoquan

    2013-04-01

    Composite films of graphene oxide (GO) sheets and silk fibroin (SF) with layered structures have been prepared by facile solution casting of SF-GO hydrogels. The as-prepared composite film containing 15% (by weight, wt%) of SF shows a high tensile strength of 221 +/- 16 MPa and a failure strain of 1.8 +/- 0.4%, which partially surpass those of natural nacre. Particularly, this composite film also has a high modulus of 17.2 +/- 1.9 GPa. The high mechanical properties of this composite film can be attributed to its high content of GO (85 wt%), compact layered structure and the strong hydrogen bonding interaction between SF chains and GO sheets.Composite films of graphene oxide (GO) sheets and silk fibroin (SF) with layered structures have been prepared by facile solution casting of SF-GO hydrogels. The as-prepared composite film containing 15% (by weight, wt%) of SF shows a high tensile strength of 221 +/- 16 MPa and a failure strain of 1.8 +/- 0.4%, which partially surpass those of natural nacre. Particularly, this composite film also has a high modulus of 17.2 +/- 1.9 GPa. The high mechanical properties of this composite film can be attributed to its high content of GO (85 wt%), compact layered structure and the strong hydrogen bonding interaction between SF chains and GO sheets. Electronic supplementary information (ESI) available: XPS spectrum of the SF-GO hybrid film, SEM images of lyophilized GO dispersion and the failure surface of GO film. See DOI: 10.1039/c3nr00196b

  12. Turning Wood Autohydrolysate Directly into Food Packing Composite Films with Good Toughness

    Directory of Open Access Journals (Sweden)

    YaJie Hu

    2018-01-01

    Full Text Available Bio-based composite films were produced by incorporating wood autohydrolysate (WH, chitosan (CS, and cellulose nanocrystals (CNC. In this work, WH was directly utilized without further purification, and CNC was introduced as the reinforced material to prepare WH-CS-CNC composite films with excellent properties. The effects of CNC on the properties of WH-CS-CNC composite films were investigated by characterizing their structures, mechanical properties, oxygen barrier, and thermal stability properties. The results suggested that CNC could improve tensile strength of the composite films, and the tensile strain at break could be up to 4.7%. Besides, the oxygen permeability of the prepared composite films could be as low as 3.57 cm3/day·m2·kPa, making them suitable for the food packaging materials. These above results showed that the addition of CNC is an effective method to enhance the toughness of composite films. In addition, WH-CS-CNC composite films have great potential in the field of sustainable food packing materials.

  13. Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2010-02-15

    The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

  14. Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

    Science.gov (United States)

    Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

    2016-09-15

    Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

  15. Hierarchical porous graphene/polyaniline composite film with superior rate performance for flexible supercapacitors.

    Science.gov (United States)

    Meng, Yuena; Wang, Kai; Zhang, Yajie; Wei, Zhixiang

    2013-12-23

    A highly flexible graphene free-standing film with hierarchical structure is prepared by a facile template method. With a porous structure, the film can be easily bent and cut, and forms a composite with another material as a scaffold. The 3D graphene film exhibits excellent rate capability and its capacitance is further improved by forming a composite with polyaniline nanowire arrays. The flexible hierarchical composite proves to be an excellent electrode material for flexible supercapacitors. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Compositionally graded SiCu thin film anode by magnetron sputtering for lithium ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Polat, B.D., E-mail: bpolat@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Maslak, Istanbul 34469 (Turkey); Eryilmaz, O.L. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Keleş, O., E-mail: ozgulkeles@itu.edu.tr [Department of Metallurgical and Materials Engineering, Istanbul Technical University, Maslak, Istanbul 34469 (Turkey); Erdemir, A. [Energy Systems Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Amine, K. [Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2015-12-01

    Compositionally graded and non-graded composite SiCu thin films were deposited by magnetron sputtering technique on Cu disks for investigation of their potentials in lithium ion battery applications. The compositionally graded thin film electrodes with 30 at.% Cu delivered a 1400 mAh g{sup −1} capacity with 80% Coulombic efficiency in the first cycle and still retained its capacity at around 600 mAh g{sup −1} (with 99.9% Coulombic efficiency) even after 100 cycles. On the other hand, the non-graded thin film electrodes with 30 at.% Cu exhibited 1100 mAh g{sup −1} as the first discharge capacity with 78% Coulombic efficiency but the cycle life of this film degraded very quickly, delivering only 250 mAh g{sup −1} capacity after 100th cycles. Not only the Cu content but also the graded film thickness were believed to be the main contributors to the much superior performance of the compositionally graded SiCu films. We also believe that the Cu-rich region of the graded film helped reduce internal stress build-up and thus prevented film delamination during cycling. In particular, the decrease of Cu content from interface region to the top of the coating reduced the possibility of stress build-up across the film during cycling, thus leading to a high electrochemical performance.b - Highlights: • Highly adherent SiCu films are deposited by magnetron sputtering. • Compositionally graded SiCu film is produced and characterized. • Decrease of Cu content diverted the propagation of stress in the anode. • Cu rich layer at the bottom improves the adherence of the film.

  17. Thermal dewetting behavior of polystyrene composite thin films with organic-modified inorganic nanoparticles.

    Science.gov (United States)

    Kubo, Masaki; Takahashi, Yosuke; Fujii, Takeshi; Liu, Yang; Sugioka, Ken-ichi; Tsukada, Takao; Minami, Kimitaka; Adschiri, Tadafumi

    2014-07-29

    The thermal dewetting of polystyrene composite thin films with oleic acid-modified CeO2 nanoparticles prepared by the supercritical hydrothermal synthesis method was investigated, varying the nanoparticle concentration (0-30 wt %), film thickness (approximately 50 and 100 nm), and surface energy of silanized silicon substrates on which the composite films were coated. The dewetting behavior of the composite thin films during thermal annealing was observed by an optical microscope. The presence of nanoparticles in the films affected the morphology of dewetting holes, and moreover suppressed the dewetting itself when the concentration was relatively high. It was revealed that there was a critical value of the surface energy of the substrate at which the dewetting occurred. In addition, the spatial distributions of nanoparticles in the composite thin films before thermal annealing were investigated using AFM and TEM. As a result, we found that most of nanoparticles segregated to the surface of the film, and that such distributions of nanoparticles contribute to the stabilization of the films, by calculating the interfacial potential of the films with nanoparticles.

  18. Synthesis, nanostructure and magnetic properties of FeCo-reduced graphene oxide composite films by one-step electrodeposition

    International Nuclear Information System (INIS)

    Cao, Derang; Li, Hao; Wang, Zhenkun; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

    2015-01-01

    FeCo-reduced graphene oxide (FeCo-RGO) composite film was fabricated on indium tin oxide substrate using one-step electrodeposition method. Raman spectroscopy and field emission scanning electron microscope results show that the reduced graphene oxide is coprecipitated with the FeCo film. The energy-dispersive spectrometer results demonstrate that the atomic ratio of Fe/Co in FeCo-RGO composite film is larger than that of the FeCo film under the same fabrication condition. As a result, the FeCo-RGO composite film exhibits good soft magnetic properties and high-frequency properties as well as the FeCo film. The magnetic anisotropy field and saturation magnetization of FeCo-RGO composite film are increased when compared with FeCo film. Furthermore, the ferromagnetic resonance frequency is improved from 2.15 GHz for the FeCo film to 3.9 GHz for the FeCo-RGO composite film. - Highlights: • FeCo-reduced graphene oxide composite film was fabricated on indium tin oxide substrate. • One step electrodeposition method was used. • Good soft magnetic properties were exhibited by the composite films. • Increase of resonance frequency from 2.15 GHz for FeCo film to 3.9 GHz for composite film

  19. Structural, dielectric and ferroelectric studies of (x) Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4} + (1-x) BaTiO{sub 3} magnetoelectric nano-composites

    Energy Technology Data Exchange (ETDEWEB)

    Khader, S. Abdul, E-mail: khadersku@gmail.com; Sankarappa, T., E-mail: sankarappa@rediffmail.com [Department of Physics, Gulbarga University, Gulbarga-585106, Karnataka (India); Muneeswaran, M.; Giridharan, N. V. [Department of Physics, National Institute of Technology, Tiruchirapalli-620015 (India)

    2016-05-06

    The Particulate nano-composites of ferrite and ferroelectric phases having the general formula (x) Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4} + (1-x) BaTiO{sub 3} (x=15%, 30% and 45%) were synthesized by sintering mixtures of highly ferroelectric BaTiO{sub 3} (BT) and highly magneto-strictive magnetic component Mg{sub 0.25}Cu{sub 0.25}Zn{sub 0.5}Fe{sub 2}O{sub 4}(MCZF). The presence of constituent phases of ferrite, ferroelectric and their composites were probed and confirmed by X-ray diffraction (XRD) studies. Surface morphology of the samples has been investigated using Field Emission Scanning Electron Microscope (FESEM). The variation of dielectric constant and dissipation factor as a function of frequency from 100 Hz to 1 MHz at room temperature were carried out using a Hioki LCR Hi-Tester. The dielectric constant and dielectric loss were found to decrease rapidly in the low frequency region and became almost constant in the high frequency region. The electrical conductivity deduced from the measured dielectric data has been thoroughly analyzed and found that the conduction mechanism in these composites is in conformity with small polaron hopping model. The ferroelectric properties of synthesized magneto-electric nano-composites were measured using P-E loop tracer.

  20. Preparation of reduced graphene oxide/gelatin composite films with reinforced mechanical strength

    International Nuclear Information System (INIS)

    Wang, Wenchao; Wang, Zhipeng; Liu, Yu; Li, Nan; Wang, Wei; Gao, Jianping

    2012-01-01

    Highlights: ► We used and compared different proportion of gelatin and chitosan as reducing agents. ► The mechanical properties of the films are investigated, especially the wet films. ► The cell toxicity of the composite films as biomaterial is carried out. ► The water absorption capabilities of the composite films also studied. -- Abstract: Graphene oxide (GO) was reduced by chitosan/gelatin solution and added to gelatin (Gel) to fabricate reduced graphene oxide/gelatin (RGO/Gel) films by a solvent-casting method using genipin as cross-linking agent. The structure and properties of the films were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), thermogravimetric analysis (TGA) and UV–vis spectroscopy. The addition of RGO increased the tensile strength of the RGO/Gel films in both dry and wet states, but decreased their elongation at break. The incorperation of RGO also decreased the swelling ability of the films in water. Cell cultures were carried out in order to test the cytotoxicity of the films. The cells grew and reproduced well on the RGO/Gel films, indicating that the addition of RGO has no negative effect on the compatibility of the gelatin. Therefore, the reduced graphene oxide/gelatin composite is a promising biomaterial with excellent mechanical properties and good cell compatibility.

  1. Composition changes in sputter deposition of Y-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Hoshi, Y.; Naoe, M.

    1989-01-01

    The authors discuss the mechanism of the composition change in sputter deposition of Y-BA-Cu-O film from YBa 2 Cu 3 O 7-chi target investigated by means of a rf planar magnetron sputtering apparatus. Film composition changes significantly with not only substrate temperature Ts and sputtering gas pressure, but also substrate position. Lack of Cu and Ba content is significant in the film deposited at the substrate position just above the erosion area of the sputtering target. Suppression of bombardment of the substrate surface by negative ions emitted from the target and substrate is effective in increasing Cu and Ba content in the film. These results indicate not only that the sticking probability of the sputtered particles changes with Ts and incident particle energy, but also that high energy particle bombardment of the substrate surface plays an important role in the change of the film composition

  2. Effects of the top-electrode preparation method on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt thin film capacitors

    International Nuclear Information System (INIS)

    Lee, Eun Gu; Lee, Jae Gab; Kim, Sun Jae

    2006-01-01

    The deformation in the hysteresis loop of Pt/PZT/Pt thin-film capacitors due to deposition and patterning of the top electrode has been investigated. The PZT film was aged during the deposition of the top electrode and was positively poled during reactive ion etching (RIE). The PZT film having sputtered top electrode was very sensitive to the RIE process. The film with a thinner top electrode showed less initial switching polarization due to less compressive stress, but better fatigue characteristics due to an enhanced partial-switching region.

  3. Magnetic and electromagnetic properties of Pr doped strontium ferrite/polyaniline composite film

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Li, Yuqing; Wang, Yan, E-mail: wangyan287580632@126.com

    2014-11-15

    This paper reported three acid (including hydrochloric acid HCl, p-toluenesulfonic acid PTS and D-camphor-10-acid CSA) doped SrPr{sub 0.2}Fe{sub 11.8}O{sub 19}/PANI composite film and the HCl–PANI film prepared by a sol–gel method and in-situ oxidative polymerization. The characteristics of the film phase structure, surface morphology, conductivity and magnetic and electromagnetic properties were studied by using XRD, XPS, FESEM, four-probe tester, VSM and Vector Network Analyzer. The resistivity of organic acid doped composite films is higher than that of the HCl doped one. The saturation and remanent magnetization of PTS and HCl doped composite films are greater than the CSA-doped one; however, the coercivity of the three acid doped composite films is basically 5546 Oe. The saturation magnetization, remanent magnetization and coercivity of SrPr{sub 0.2}Fe{sub 11.8}O{sub 19} film are greater than those of the SrPr{sub 0.2}Fe{sub 11.8}O{sub 19}–PANI composite film. In the frequency range of 8–12 GHz, the dielectric loss of HCl–PANI film is the maximum, and the dielectric loss of SrPr{sub 0.2}Fe{sub 11.8}O{sub 19} film is the minimum; the magnetic loss of the four films is in descending order as SrPr{sub 0.2}Fe{sub 11.8}O{sub 19} film, PrSrM/(HCl–PANI) composite film, PrSrM/(CSA–PANI) and HCl–PANI film. - Highlights: • Synthesizing three acid doped SrPr{sub 0.2}Fe{sub 11.8}O{sub 19}/PANI composite films. • By sol–gel method and in-situ oxidative polymerization. • With excellent magnetic and electromagnetic properties. • The particular coating structure of PANI and Sr-ferrite. • Great interest for magnetic material and microwave absorbers.

  4. Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok553@nplindia.org; Shukla, A. K. [National Physical Laboratory (CSIR), Dr. K. S. Krishnan Road, New Delhi-110012 (India); Barrionuevo, D.; Ortega, N.; Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 (United States); Shannigrahi, Santiranjan [Institute of Materials Research and Engineering - IMRE, Agency for Science Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Scott, J. F. [Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews KY16 ST (United Kingdom)

    2015-03-30

    Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

  5. Polymer compositions, polymer films and methods and precursors for forming same

    Science.gov (United States)

    Klaehn, John R; Peterson, Eric S; Orme, Christopher J

    2013-09-24

    Stable, high performance polymer compositions including polybenzimidazole (PBI) and a melamine-formaldehyde polymer, such as methylated, poly(melamine-co-formaldehyde), for forming structures such as films, fibers and bulky structures. The polymer compositions may be formed by combining polybenzimidazole with the melamine-formaldehyde polymer to form a precursor. The polybenzimidazole may be reacted and/or intertwined with the melamine-formaldehyde polymer to form the polymer composition. For example, a stable, free-standing film having a thickness of, for example, between about 5 .mu.m and about 30 .mu.m may be formed from the polymer composition. Such films may be used as gas separation membranes and may be submerged into water for extended periods without crazing and cracking. The polymer composition may also be used as a coating on substrates, such as metal and ceramics, or may be used for spinning fibers. Precursors for forming such polymer compositions are also disclosed.

  6. Thin-film composite crosslinked polythiosemicarbazide membranes for organic solvent nanofiltration (OSN)

    KAUST Repository

    Aburabie, Jamaliah; Neelakanda, Pradeep; Karunakaran, Madhavan; Peinemann, Klaus-Viktor

    2015-01-01

    In this work we report a new class of solvent stable thin-film composite (TFC) membrane fabricated on crosslinked polythiosemicarbazide (PTSC) as substrate that exhibits superior stability compared with other solvent stable polymeric membranes

  7. A Facile Pathway to Modify Cellulose Composite Film by Reducing Wettability and Improving Barrier towards Moisture

    Directory of Open Access Journals (Sweden)

    Xiaorong Hu

    2017-01-01

    Full Text Available The hydrophilic property of cellulose is a key limiting factor for its wide application. Here, a novel solution impregnation pathway was developed to increase the hydrophobic properties of cellulose. When compared with the regenerated cellulose (RC, the composite films showed a decrease in water uptake ability towards water vapor, and an increase of the water contact angle from 29° to 65° with increasing resin content in the composites, with only a slight change in the transmittance. Furthermore, the Young’s modulus value increased from 3.2 GPa (RC film to 5.1 GPa (RCBEA50 film. The results indicated that the composites had combined the advantages of cellulose and biphenyl A epoxy acrylate prepolymer (BEA resin. The presented method has great potential for the preparation of biocomposites with improved properties. The overall results suggest that composite films can be used as high-performance packaging materials.

  8. Preparation and properties of biodegradable films from Sterculia urens short fiber/cellulose green composites.

    Science.gov (United States)

    Jayaramudu, J; Reddy, G Siva Mohan; Varaprasad, K; Sadiku, E R; Sinha Ray, S; Varada Rajulu, A

    2013-04-02

    The development of commercially viable "green products", based on natural resources for the matrices and reinforcements, in a wide range of applications, is on the rise. The present paper focuses on Sterculia urens short fiber reinforced pure cellulose matrix composite films. The morphologies of the untreated and 5% NaOH (alkali) treated S. urens fibers were observed by SEM. The effect of 5% NaOH treated S. urens fiber (5, 10, 15 and 20% loading) on the mechanical properties and thermal stability of the composites films is discussed. This paper presents the developments made in the area of biodegradable S. urens short fiber/cellulose (SUSF/cellulose) composite films, buried in the soil and later investigated by the (POM), before and after biodegradation has taken place. SUSF/cellulose composite films have great potential in food packaging and for medical applications. Copyright © 2013 Elsevier Ltd. All rights reserved.

  9. Growth of BaTiO3-PVDF composite thick films by using aerosol deposition

    Science.gov (United States)

    Cho, Sung Hwan; Yoon, Young Joon

    2016-01-01

    Barium titanate (BaTiO3)-polyvinylidene fluoride (PVDF) composite thick films were grown by using aerosol deposition at room temperature with BaTiO3 and PVDF powders. To produce a uniform composition in ceramic and polymer composite films, which show a substantial difference in specific gravity, we used PVDF-coated BaTiO3 powders as the starting materials. An examination of the microstructure confirmed that the BaTiO3 were well distributed in the PVDF matrix in the form of a 0 - 3 compound. The crystallite size in the BaTiO3-PVDF composite thick films was 5 ˜ 50 times higher than that in pure BaTiO3 thick films. PVDF plays a role in suppressing the fragmentation of BaTiO3 powder during the aerosol deposition process and in controlling the relative permittivity.

  10. Highly Hydrophilic Thin-Film Composite Forward Osmosis Membranes Functionalized with Surface-Tailored Nanoparticles

    KAUST Repository

    Tiraferri, Alberto; Kang, Yan; Giannelis, Emmanuel P.; Elimelech, Menachem

    2012-01-01

    Thin-film composite polyamide membranes are state-of-the-art materials for membrane-based water purification and desalination processes, which require both high rejection of contaminants and high water permeabilities. However, these membranes

  11. Preparation of ZnO nanoribbon–MWCNT composite film and its ...

    Indian Academy of Sciences (India)

    2017-07-28

    Jul 28, 2017 ... has potential application as an antimicrobial bandage material. The composite film ... packaging of integrated circuits. Buckypapers have been ... +2 ions, which are known to inhibit active transport through the membrane,.

  12. One-step synthesis of PbSe-ZnSe composite thin film

    Directory of Open Access Journals (Sweden)

    Abe Seishi

    2011-01-01

    Full Text Available Abstract This study investigates the preparation of PbSe-ZnSe composite thin films by simultaneous hot-wall deposition (HWD from multiple resources. The XRD result reveals that the solubility limit of Pb in ZnSe is quite narrow, less than 1 mol%, with obvious phase-separation in the composite thin films. A nanoscale elemental mapping of the film containing 5 mol% PbSe indicates that isolated PbSe nanocrystals are dispersed in the ZnSe matrix. The optical absorption edge of the composite thin films shifts toward the low-photon-energy region as the PbSe content increases. The use of a phase-separating PbSe-ZnSe system and HWD techniques enables simple production of the composite package.

  13. Relating performance of thin-film composite forward osmosis membranes to support layer formation and structure

    KAUST Repository

    Tiraferri, Alberto; Yip, Ngai Yin; Phillip, William A.; Schiffman, Jessica D.; Elimelech, Menachem

    2011-01-01

    the technology to the point that it is commercially viable. Here, a systematic investigation of the influence of thin-film composite membrane support layer structure on forward osmosis performance is conducted. The membranes consist of a selective polyamide

  14. In-situ Non-Invasive Imaging of Liquid-Immersed Thin Film Composite Membranes

    KAUST Repository

    Ogieglo, Wojciech; Pinnau, Ingo; Wessling, Matthias

    2017-01-01

    We present a non-invasive method to directly image liquid-immersed thin film composite membranes. The approach allows accessing information not only on the lateral distribution of the coating thickness, including variations in its swelling

  15. Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

    NARCIS (Netherlands)

    Wan, X.; Houwman, Evert Pieter; Steenwelle, Ruud Johannes Antonius; van Schaijk, R.; Nguyen, Duc Minh; Dekkers, Jan M.; Rijnders, Augustinus J.H.M.

    2014-01-01

    Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti

  16. Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

    Science.gov (United States)

    Yusuf, Mohammed; Du, Xu; Dawber, Matthew

    2013-03-01

    Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

  17. Improved luminescence intensity and stability of thermal annealed ZnO incorporated Alq3 composite films.

    Science.gov (United States)

    Cuba, M; Muralidharan, G

    2015-11-01

    The 30 wt% of ZnO (weight percentage of ZnO has been optimised) incorporated tris- (8-hydroxyquinoline)aluminum (Alq3) has been synthesised and coated on to glass substrates using dip coating method. The structural and optical properties of the Alq3/ZnO composite film after thermal annealing from 50 to 300 °C insteps 50° has been studied and reported. XRD pattern reveals the presence of crystalline ZnO in all the annealed films. The films annealed above 150 °C reveal the presence of crystalline Alq3 along with crystalline ZnO. The FTIR spectra confirm the presence of hydroxyquinoline and ZnO vibration in all the annealed composite films. The composite films annealed above 150 °C show a partial sublimation and degradation of hydroxyquinoline compounds. The ZnO incorporated composite films (Alq3/ZnO) exhibit two emission peaks, one corresponding to ZnO at 487 nm and another at 513 nm due to Alq3. The films annealed at 200 °C exhibit maximum photoluminescence (PL) intensity than pristine film at 513 nm when excited at 390 nm.

  18. Diatomite as a novel composite ingredient for chitosan film with enhanced physicochemical properties.

    Science.gov (United States)

    Akyuz, Lalehan; Kaya, Murat; Koc, Behlul; Mujtaba, Muhammad; Ilk, Sedef; Labidi, Jalel; Salaberria, Asier M; Cakmak, Yavuz Selim; Yildiz, Aysegul

    2017-12-01

    Practical applications of biopolymers in different industries are gaining considerable increase day by day. But still, these biopolymers lack important properties in order to meet the industrial demands. In the same regard, in the current study, chitosan composite films are produced by incorporating diatomite soil at two different concentrations. In order to obtain a homogeneous film, glutaraldehyde was supplemented to chitosan solution as a cross-linker. Compositing diatomaceous earth to chitosan film resulted in improvement of various important physicochemical properties compared to control such as; enhanced film wettability, increase elongation at break and improved thermal stability (264-277°C). The microstructure of the film was observed to haveconsisted of homogeneously distributed blister-shaped structures arised due to the incorporation of diatomite. The incorporation of diatomite did not influence the overall antioxidant activity of the composite films, which can be ascribe to the difficulty radicals formation. Chitosan film incorporated with increasing fraction of diatomite revealed a notable enhancement in the antimicrobial activity. Additionally with the present study, for the first time possible interactions between chitosan/diatomite were determined via quantum chemical calculations. Current study will be helpful in giving a new biotechnological perspective to diatom in terms of its successful application in hydrophobic composite film production. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. Synthesis and characterization of MoO3–WO3 composite thin films ...

    Indian Academy of Sciences (India)

    Abstract. In order to achieve high colouration efficiency, MoO3–WO3 composite thin films have been successfully deposited on sodium silicate glass and silicon wafer (111) at 30 ◦C by a very simple novel wet process known as liquid phase deposition. The deposited films were annealed at different temperatures and ...

  20. Composite polyaniline/calixarene Langmuir - Blodgett films for gas sensing

    Science.gov (United States)

    Lavrik, N. V.; DeRossi, D.; Kazantseva, Z. I.; Nabok, A. V.; Nesterenko, B. A.; Piletsky, S. A.; Kalchenko, V. I.; Shivaniuk, A. N.; Markovskiy, L. N.

    1996-12-01

    Mixtures of the polyaniline (emeraldine base) and phosphorylated calix[4]resorcinolarene derivative (CA) are proposed to prepare LB films for conductometric gas sensors. They are quite stable at the air - water interface and give LB films of high quality. The average thickness of the mixed monolayers is found to be 1.6 nm. The as-deposited films are insulating. Doping with HCl increases the conductivity up to between 0957-4484/7/4/002/img12 and 0957-4484/7/4/002/img13 which depends on the component ratio. The films containing more than 20 wt% of CA are doped reversibly in part. Thus, the films which are highly sensitive to either 0957-4484/7/4/002/img14 or HCl films are prepared by choosing the component ratio. Detection of 0957-4484/7/4/002/img14 and HCl in the ppm range is demonstrated.

  1. Calcinated tea and cellulose composite films and its dielectric and lead adsorption properties.

    Science.gov (United States)

    Jayaramudu, Tippabattini; Varaprasad, Kokkarachedu; Kim, Hyun Chan; Kafy, Abdullahil; Kim, Jung Woong; Kim, Jaehwan

    2017-09-01

    In this paper, calcinated tea and cellulose composite (CTCC) films were fabricated via solution casting method. Chemical structure, morphology, crystallinity and thermal stability of the fabricated films were characterized by using Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray diffraction and thermogravimetric analysis. The effect of calcinated tea loading on the properties of the prepared CTCC films was studied. The results suggest that the prepared CTCC films show higher mechanical properties, thermal stability and dielectric constant than the neat cellulose film. In addition, the CTCC films adsorb Pb 2+ ions and its adsorption performance depends on the calcinated tea content and pH level. The CTCC films are useful for sensors, flexible capacitor as well as lead adsorption applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

  2. Preparation of PANI/PSF conductive composite films and their characteristic

    Institute of Scientific and Technical Information of China (English)

    Yang Yuying; Shang Xiuli; Kong Chao; Zhao Hongxiao; Hu Zhong'ai

    2006-01-01

    Polyaniline (PANI)/polysulfone (PSF) composite films are successfully prepared by phase separation and one-step in-situ polymerization.It is found that the head-on face (in contact with solution) of the films is green while the back face is white.The chemical component and the surface morphology of both surfaces of the films are characterized by FT-IR spectra and SEM,respectively.The effect of the polymerization temperature,time and concentration of the reactants on the electrical properties of the films are discussed in details.The thermo-oxidative degradation of the films is studied by thermogravimetric analysis (TGA).The results indicate that the thermal stability of the PANI/PSF films is higher than that of the pure PSF film.

  3. Ferroelectric properties of Bi3.25Ce0.75Ti3O12 thin films prepared by a liquid source misted chemical deposition

    International Nuclear Information System (INIS)

    Jeon, M.K.; Chung, H.J.; Kim, K.W.; Oh, K.S.; Woo, S.I.

    2005-01-01

    Cerium-substituted bismuth titanate (Bi 3.25 Ce 0.75 Ti 3 O 12 (BCT)) films were deposited on the Pt(111)/SiO 2 /Si(100) substrates by a liquid source misted chemical deposition technique. This film showed X-ray diffraction patterns that crystallization along the (006) direction was suppressed and did not contain any other oxides. The remnant polarization of this film increased with increase in annealing temperature. The 2P r and 2E c values of the BCT film annealed at 700 deg. C were 19.72 μC/cm 2 and 357 kV/cm, respectively. 2P r value of this film decreased by less than 5% of the initial value after 7 x 10 9 read/write switching cycles at a frequency of 1 MHz

  4. Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2010-12-01

    Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

  5. A dense and strong bonding collagen film for carbon/carbon composites

    International Nuclear Information System (INIS)

    Cao, Sheng; Li, Hejun; Li, Kezhi; Lu, Jinhua; Zhang, Leilei

    2015-01-01

    Graphical abstract: - Highlights: • Significantly enhancement of biocompatibility on C/C composites by preparing a collagen film. • The dense and continuous collagen film had a strong bonding strength with C/C composites after dehydrathermal treatment (DHT) crosslink. • Numerous oxygen-containing functional groups formed on the surface of C/C composites without matrix damage. - Abstract: A strong bonding collagen film was successfully prepared on carbon/carbon (C/C) composites. The surface conditions of the modified C/C composites were detected by contact angle measurements, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectra. The roughness, optical morphology, bonding strength and biocompatibility of collagen films at different pH values were detected by confocal laser scanning microscope (CLSM), universal test machine and cytology tests in vitro. After a 4-h modification in 30% H 2 O 2 solution at 100 °C, the contact angle on the surface of C/C composites was decreased from 92.3° to 65.3°. Large quantities of hydroxyl, carboxyl and carbonyl functional groups were formed on the surface of the modified C/C composites. Then a dense and continuous collagen film was prepared on the modified C/C substrate. Bonding strength between collagen film and C/C substrate was reached to 8 MPa level when the pH value of this collagen film was 2.5 after the preparing process. With 2-day dehydrathermal treatment (DHT) crosslinking at 105 °C, the bonding strength was increased to 12 MPa level. At last, the results of in vitro cytological test showed that this collagen film made a great improvement on the biocompatibility on C/C composites

  6. A dense and strong bonding collagen film for carbon/carbon composites

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Sheng; Li, Hejun, E-mail: lihejun@nwpu.edu.cn; Li, Kezhi; Lu, Jinhua; Zhang, Leilei

    2015-08-30

    Graphical abstract: - Highlights: • Significantly enhancement of biocompatibility on C/C composites by preparing a collagen film. • The dense and continuous collagen film had a strong bonding strength with C/C composites after dehydrathermal treatment (DHT) crosslink. • Numerous oxygen-containing functional groups formed on the surface of C/C composites without matrix damage. - Abstract: A strong bonding collagen film was successfully prepared on carbon/carbon (C/C) composites. The surface conditions of the modified C/C composites were detected by contact angle measurements, scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectra. The roughness, optical morphology, bonding strength and biocompatibility of collagen films at different pH values were detected by confocal laser scanning microscope (CLSM), universal test machine and cytology tests in vitro. After a 4-h modification in 30% H{sub 2}O{sub 2} solution at 100 °C, the contact angle on the surface of C/C composites was decreased from 92.3° to 65.3°. Large quantities of hydroxyl, carboxyl and carbonyl functional groups were formed on the surface of the modified C/C composites. Then a dense and continuous collagen film was prepared on the modified C/C substrate. Bonding strength between collagen film and C/C substrate was reached to 8 MPa level when the pH value of this collagen film was 2.5 after the preparing process. With 2-day dehydrathermal treatment (DHT) crosslinking at 105 °C, the bonding strength was increased to 12 MPa level. At last, the results of in vitro cytological test showed that this collagen film made a great improvement on the biocompatibility on C/C composites.

  7. Investigation of polypyrrole/polyvinyl alcohol–titanium dioxide composite films for photo-catalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Shaoqiang; Zhang, Hongyang; Song, Yuanqing; Zhang, Jianling; Yang, Haigang; Jiang, Long, E-mail: jianglong@scu.edu.cn; Dan, Yi, E-mail: danyichenweiwei@163.com

    2015-07-01

    Graphical abstract: - Highlights: • The study provides an easy and convenient method to fabricate films, which will give guidance for the preparation of three-dimensional materials. • The PPy/PVA–TiO{sub 2} films can keep better photo-catalytic activities both under UV and visible light irradiation when compared with TiO{sub 2} film. • There exist electron transfers between PPy/PVA and TiO{sub 2}. - Abstract: Polypyrrole/polyvinyl alcohol–titanium dioxide (PPy/PVA–TiO{sub 2}) composite films used as photo-catalysts were fabricated by combining TiO{sub 2} sol with PPy/PVA solution in which PPy was synthesized by in situ polymerization of pyrrole (Py) in polyvinyl alcohol (PVA) matrix and loaded on glass. The prepared photo-catalysts were investigated by X-ray diffraction (XRD), ultraviolet–visible diffuse reflection spectroscopy (UV–vis DRS), scanning electron microscopy (SEM), Fourier transform infrared (FT-IR) spectra and photoluminescence (PL). The results indicate that the composites have same crystal structure as the TiO{sub 2} and extend the optic absorption from UV region to visible light region. By detecting the variation ratio, detected by ultraviolet–vis spectroscopy, of model pollutant rhodamine B (RhB) solution in the presence of the composite films under both UV and visible light irradiation, the photo-catalytic performance of the composite films was investigated. The results show that the PPy/PVA–TiO{sub 2} composite films show better photo-catalytic properties than TiO{sub 2} film both under UV and visible light irradiation, and the photo-catalytic degradation of RhB follows the first-order kinetics. The effects of the composition of composite films and the concentration of RhB on the photo-catalytic performance, as well as the possible photo-catalytic mechanism, were also discussed. By photo-catalytic recycle experiments, the structure stability of the PPy/PVA–TiO{sub 2} composite film was investigated and the results show that

  8. Preparation of pectin/silver nanoparticles composite films with UV-light barrier and properties.

    Science.gov (United States)

    Shankar, Shiv; Tanomrod, Nattareya; Rawdkuen, Saroat; Rhim, Jong-Whan

    2016-11-01

    Silver nanoparticles (AgNPs) was synthesized by a green method using an aqueous extract of Caesalpinia mimosoides Lamk (CMLE) as reducing and stabilizing agents, and they were used for the preparation of pectin-based antimicrobial composite films. The AgNPs were spherical in shape with the size in the range of 20-80nm and showed the absorption peak around 500nm. The pectin/AgNPs composite film exhibited characteristic absorption peak of AgNPs at 480nm. The surface color and light transmittance of the pectin films were greatly influenced by the addition of AgNPs. The lightness of the films decreased, however, redness and yellowness of the films increased after incorporation of AgNPs. UV-light barrier property of the pectin film increased significantly with a little decrease in the transparency. Though there were no structural changes in the pectin film by the incorporation of CMLE and AgNPs as indicated by the FTIR results, the film properties such as thermal stability, mechanical strength, and water vapor barrier properties of the pectin films increased. The pectin/AgNPs nanocomposite films exhibited strong antibacterial activity against food-borne pathogenic bacteria, Escherichia coli and Listeria monocytogenes. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: bisquert@uji.es [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)

    2016-10-07

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  10. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    International Nuclear Information System (INIS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-01-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  11. Film-thickness and composition dependence of epitaxial thin-film PZT-based

    NARCIS (Netherlands)

    Nguyen, Duc Minh; Dekkers, Jan M.; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

    2013-01-01

    The transverse piezoelectric coefficient e31,f and mass-sensitivity were measured on piezoelectric cantilevers based on epitaxial PZT thin-films with film-thicknesses ranging from 100 to 2000 nm. The highest values of e31,f and mass-sensitivity were observed at a film thickness of 500–750 nm, while

  12. Controlling the properties of ferroelectric-nickelate interfaces

    Science.gov (United States)

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

    2015-03-01

    Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

  13. Modification of energy band alignment and electric properties of Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin-film ferroelectric varactors by Ag impurities at interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hirsch, S.; Komissinskiy, P., E-mail: komissinskiy@oxide.tu-darmstadt.de; Flege, S.; Li, S.; Rachut, K.; Klein, A.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2014-06-28

    We report on the effects of Ag impurities at interfaces of parallel-plate Pt/Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Pt thin film ferroelectric varactors. Ag impurities occur at the interfaces due to diffusion of Ag from colloidal silver paint used to attach the varactor samples with their back side to the plate heated at 600–750 °C during deposition of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}. X-ray photoelectron spectroscopy and secondary ion mass spectrometry suggest that amount and distribution of Ag adsorbed at the interfaces depend strongly on the adsorbent surface layer. In particular, Ag preferentially accumulates on top of the Pt bottom electrode. The presence of Ag significantly reduces the barrier height between Pt and Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} leading to an increased leakage current density and, thus, to a severe degradation of the varactor performance.

  14. Metal–organic coordinated multilayer film formation: Quantitative analysis of composition and structure

    Energy Technology Data Exchange (ETDEWEB)

    Benson, Alexandra S.; Elinski, Meagan B.; Ohnsorg, Monica L.; Beaudoin, Christopher K.; Alexander, Kyle A.; Peaslee, Graham F.; DeYoung, Paul A.; Anderson, Mary E., E-mail: meanderson@hope.edu

    2015-09-01

    Metal–organic coordinated multilayers are self-assembled thin films fabricated by alternating solution–phase deposition of bifunctional organic molecules and metal ions. The multilayer film composed of α,ω-mercaptoalkanoic acid and Cu (II) has been the focus of fundamental and applied research with its robust reproducibility and seemingly simple hierarchical architecture. However, internal structure and composition have not been unambiguously established. The composition of films up to thirty layers thick was investigated using Rutherford backscattering spectrometry and particle induced X-ray emission. Findings show these films are copper enriched, elucidating a 2:1 ratio for the ion to molecule complexation at the metal–organic interface. Results also reveal that these films have an average layer density similar to literature values established for a self-assembled monolayer, indicating a robust and stable structure. The surface structures of multilayer films have been characterized by contact angle goniometry, ellipsometry, and scanning probe microscopy. A morphological transition is observed as film thickness increases from the first few foundational layers to films containing five or more layers. Surface roughness analysis quantifies this evolution as the film initially increases in roughness before obtaining a lower roughness comparable to the underlying gold substrate. Quantitative analysis of topographical structure and internal composition for metal–organic coordinated multilayers as a function of number of deposited layers has implications for their incorporation in the fields of photonics and nanolithography. - Highlights: • Layer-by-layer deposition is examined by scanning probe microscopy and ion beam analysis. • Film growth undergoes morphological evolution during foundational layer deposition. • Image analysis quantified surface features such as roughness, grain size, and coverage. • Molecular density of each film layer is found to

  15. Compositional dependence of Young's moduli for amorphous FeCo-SiO2 thin films

    International Nuclear Information System (INIS)

    Zhang, L.; Xie, J. L.; Deng, L. J.; Guo, Q.; Zhu, Z. W.; Bi, L.

    2011-01-01

    Systematic force-deflection measurements with microcantilevers and a combinatorial-deposition method have been used to investigate the Young's moduli of amorphous composite FeCo-SiO 2 thin films as a function of film composition, with high compositional resolution. It is found that the modulus decreases monotonically with increasing FeCo content. Such a trend can be explained in terms of the metalloid atoms having a significant effect on the Young's moduli of metal-metalloid composites, which is associated with the strong chemical interaction between the metalloid and themetallic atoms rather than that between the metallic components themselves. This work provides an efficient and effective method to study the moduli of magnetic thin films over a largecomposition coverage, and to compare the relative magnitudes of moduli for differentcompositions at high compositional resolution.

  16. Electrochemical Reduction of CO2 on Compositionally Variant Au-Pt Bimetallic Thin Films

    DEFF Research Database (Denmark)

    Ma, Ming; Hansen, Heine Anton; Valenti, Marco

    2017-01-01

    The electrocatalytic reduction of CO2 on Au-Pt bimetallic catalysts with different compositions was evaluated, offering a platform for uncovering the correlation between the catalytic activity and the surface composition of bimetallic electrocatalysts. The Au-Pt alloy films were synthesized...... by a magnetron sputtering co-deposition technique with tunable composition. It was found that the syngas ratio (CO:H2) on the Au-Pt films is able to be tuned by systematically controlling the binary composition. This tunable catalytic selectivity is attributed to the variation of binding strength of COOH and CO...... intermediates, influenced by the surface electronic structure (d-band center energy) which is linked to the surface composition of the bimetallic films. Notably, a gradual shift of the d-band center away from the Fermi level was observed with increasing Au content, which correspondingly reduces the binding...

  17. Effects of Nb doping on the microstructure, ferroelectric and ...

    Indian Academy of Sciences (India)

    ·cm) and the poor piezoelectric performance and weak ferroelectricity are observed after the addition of .... 9.81–13.88% (<15%) and the goodness-of-fit indicator S ..... the Open Project of State Key Laboratory of Electronic Thin. Films and ...

  18. Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

    DEFF Research Database (Denmark)

    Phatak, C.; Petford-Long, A. K.; Beleggia, Marco

    2014-01-01

    Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We prese...

  19. PEO + PVP blended polymer composite films for multifunctional

    Indian Academy of Sciences (India)

    has been noticed from PEO + PVP : Ni2+ polymer film at 373 K. Emission analysis of Co2+: ... suggested that these TM ions doped PEO + PVP polymer films are found to be potential ... by undertaking some nanoparticles for obtaining the sev-.

  20. Composition and performance of thin film CdSe electrodeposited from selenosulfite solution

    International Nuclear Information System (INIS)

    Szabo, J.P.; Simms, D.; Cocivera, M.

    1985-01-01

    Cathodic electrodeposition of thin film CdSe from aqueous selenosulfite solution has been studied as function of solution composition and electrode potential. The Cd/Se ratio has been analyzed using polarography and Rutherford backscattering spectroscopy. Polarography gives a compostion averaged over the whole film (2cm 2 ) while RBS gives local surface composition (1 mm 2 ). The average Cd/Se ratio is 1.1, but some variation was found to occur across the surface of film (0.82 to 1.2)

  1. Probing the phase composition of silicon films in situ by etch product detection

    International Nuclear Information System (INIS)

    Dingemans, G.; Donker, M. N. van den; Gordijn, A.; Kessels, W. M. M.; Sanden, M. C. M. van de

    2007-01-01

    Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH 4 ) gas density during a short H 2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH 4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis

  2. Structural and thermal properties of silk fibroin - Silver nanoparticles composite films

    Science.gov (United States)

    Shivananda, C. S.; Rao B, B. Lakshmeesha; Shetty, G. Rajesh; Sangappa, Y.

    2018-05-01

    In this work, silk fibroin-silver nanoparticles (SF-AgNPs) composite films have been prepared by simple solution casting method. The composite films were examined for structural and thermal properties using X-ray diffraction (XRD), thermogravimatric (TGA) and differential scanning calorimetry (DSC) analysis. The XRD results showed that with the introduction of AgNPs in the silk fibroin matrix the amorphous nature of the silk fibroin decreases with increasing nanoparticles concentration. The silk fibroin films possess good thermal stability with the presence of AgNPs.

  3. Determination of the area density and composition of alloy film using dual alpha particle energy loss

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Xiaojun, E-mail: maxj802@163.com [Institute of Modern Physics, Fudan University, Shanghai 200433 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Li, Bo; Gao, Dangzhong [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Xu, Jiayun [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Tang, Yongjian [Institute of Modern Physics, Fudan University, Shanghai 200433 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China)

    2017-02-01

    A novel method based on dual α-particles energy loss (DAEL) is proposed for measuring the area density and composition of binary alloy films. In order to obtain a dual-energy α-particles source, an ingenious design that utilizes the transmitted α-particles traveling the thin film as a new α-particles source is presented. Using the DAEL technique, the area density and composition of Au/Cu film are determined accurately with an uncertainty of better than 10%. Finally, some measures for improving the combined uncertainty are discussed.

  4. Properties and Applications of High Emissivity Composite Films Based on Far-Infrared Ceramic Powder.

    Science.gov (United States)

    Xiong, Yabo; Huang, Shaoyun; Wang, Wenqi; Liu, Xinghai; Li, Houbin

    2017-11-29

    Polymer matrix composite materials that can emit radiation in the far-infrared region of the spectrum are receiving increasing attention due to their ability to significantly influence biological processes. This study reports on the far-infrared emissivity property of composite films based on far-infrared ceramic powder. X-ray fluorescence spectrometry, Fourier transform infrared spectroscopy, thermogravimetric analysis, and X-ray powder diffractometry were used to evaluate the physical properties of the ceramic powder. The ceramic powder was found to be rich in aluminum oxide, titanium oxide, and silicon oxide, which demonstrate high far-infrared emissivity. In addition, the micromorphology, mechanical performance, dynamic mechanical properties, and far-infrared emissivity of the composite were analyzed to evaluate their suitability for strawberry storage. The mechanical properties of the far-infrared radiation ceramic (cFIR) composite films were not significantly influenced ( p ≥ 0.05) by the addition of the ceramic powder. However, the dynamic mechanical analysis (DMA) properties of the cFIR composite films, including a reduction in damping and shock absorption performance, were significant influenced by the addition of the ceramic powder. Moreover, the cFIR composite films showed high far-infrared emissivity, which has the capability of prolonging the storage life of strawberries. This research demonstrates that cFIR composite films are promising for future applications.

  5. Crystal structure and phase composition of aluminium thin films with holmium additions

    International Nuclear Information System (INIS)

    Koleshko, V.M.; Belitskij, V.F.; Obukhov, V.E.; Rumak, N.V.; Urban, T.P.

    1984-01-01

    The effect of holmium additions on the crystal structure and phase composition of thin aluminium films has been studied. A regularity in grain size changes in aluminium thin films versus the holmium content in them is established. The holmium introduction is shown to result in the appearance of axial texture in the aluminium films, the texture axis being determined by the quantity of the addition. During heat treatment of the aluminium films, containing holmium additions, in the range of low ( approximately 100-200 deg C) annealing temperatures holmium monohydroxide is formed, and at annealing temperatures 300 deg C 0 3 is formed

  6. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  7. Development and characterisation of composite films made of kefiran and starch.

    Science.gov (United States)

    Motedayen, Ali Akbar; Khodaiyan, Faramarz; Salehi, Esmail Atai

    2013-02-15

    In this study, new edible composite films were prepared by blending kefiran with corn starch. Film-forming solutions of different ratios of kefiran to corn starch (100/0, 70/30, 50/50, 30/70) were cast at room temperature. The effects of starch addition on the resulting films' physical, mechanical and water-vapor permeability (WVP) properties were investigated. Increasing starch content from 0% to 50% (v/v) decreased the WVP of films; however, with further starch addition the WVP increased. Also, this increase in starch content increased the tensile strength and extensibility of the composite films. However, these mechanical properties decreased at higher starch contents. Dynamic mechanical thermal analysis (DMTA) curves showed that addition of starch at all levels increased the glass transition temperature of films. The electron scanning micrograph for the composite film was homogeneous, without signs of phase separation between the components. Thus, it was observed that these two film-forming components were compatible, and that an interaction existed between them. Copyright © 2012 Elsevier Ltd. All rights reserved.

  8. Composite depth dose measurement for total skin electron (TSE) treatments using radiochromic film

    International Nuclear Information System (INIS)

    Gamble, Lisa M; Farrell, Thomas J; Jones, Glenn W; Hayward, Joseph E

    2003-01-01

    Total skin electron (TSE) radiotherapy is routinely used to treat cutaneous T-cell lymphomas and can be implemented using a modified Stanford technique. In our centre, the composite depth dose for this technique is achieved by a combination of two patient positions per day over a three-day cycle, and two gantry angles per patient position. Due to patient morphology, underdosed regions typically occur and have historically been measured using multiple thermoluminescent dosimeters (TLDs). We show that radiochromic film can be used as a two-dimensional relative dosimeter to measure the percent depth dose in TSE radiotherapy. Composite depth dose curves were measured in a cylindrical, polystyrene phantom and compared with TLD data. Both multiple films (1 film per day) and a single film were used in order to reproduce a realistic clinical scenario. First, three individual films were used to measure the depth dose, one per treatment day, and then compared with TLD data; this comparison showed a reasonable agreement. Secondly, a single film was used to measure the dose delivered over three daily treatments and then compared with TLD data; this comparison showed good agreement throughout the depth dose, which includes doses well below 1 Gy. It will be shown that one piece of radiochromic film is sufficient to measure the composite percent depth dose for a TSE beam, hence making radiochromic film a suitable candidate for monitoring underdosed patient regions

  9. Development and characterization of carrageenan/grapefruit seed extract composite films for active packaging.

    Science.gov (United States)

    Kanmani, Paulraj; Rhim, Jong-Whan

    2014-07-01

    Carrageenan-based antimicrobial films were developed by incorporation of grape fruit seed extract (GSE) at different concentration into the polymer using a solvent casing method and their physical, mechanical, and antimicrobial properties were examined. The carrageenan/GSE composite films appeared yellowish tint due to the polyphenolic compounds in the GSE. SEM analysis showed rough surface with sponge like structures on the cross section of the films. FT-IR results indicated at GSE had good compatibility with carrageenan. The amorphous structure of polymer films was not changed by the incorporation of GSE. But, the addition of GSE increased moisture content, water vapor permeability, and surface hydrophilicity of the films. The tensile strength and elastic modulus decreased with increasing content of GSE, however, the elongation at break increased significantly up to 6.6μg/mL of GSE then decreased thereafter. Thermal stability of the films was not influenced by GSE incorporation. The carrageenan/GSE composite films exhibited great antibacterial activity against food borne pathogens. These results suggest that the carrageenan-based composite films have a high potential for being used as an antimicrobial or active food packaging applications. Copyright © 2014 Elsevier B.V. All rights reserved.

  10. Mango kernel starch-gum composite films: Physical, mechanical and barrier properties.

    Science.gov (United States)

    Nawab, Anjum; Alam, Feroz; Haq, Muhammad Abdul; Lutfi, Zubala; Hasnain, Abid

    2017-05-01

    Composite films were developed by the casting method using mango kernel starch (MKS) and guar and xanthan gums. The concentration of both gums ranged from 0% to 30% (w/w of starch; db). Mechanical properties, oxygen permeability (OP), water vapor permeability (WVP), solubility in water and color parameters of composite films were evaluated. The crystallinity and homogeneity between the starch and gums were also evaluated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The scanning electron micrographs showed homogeneous matrix, with no signs of phase separation between the components. XRD analysis demonstrated diminished crystalline peak. Regardless of gum type the tensile strength (TS) of composite films increased with increasing gum concentration while reverse trend was noted for elongation at break (EAB) which found to be decreased with increasing gum concentration. The addition of both guar and xanthan gums increased solubility and WVP of the composite films. However, the OP was found to be lower than that of the control with both gums. Furthermore, addition of both gums led to changes in transparency and opacity of MKS films. Films containing 10% (w/w) xanthan gum showed lower values for solubility, WVP and OP, while film containing 20% guar gum showed good mechanical properties. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. Preparation and properties of Starch-g-PLA/poly(vinyl alcohol) composite film.

    Science.gov (United States)

    Hu, Yingmo; Wang, Qingling; Tang, Mingru

    2013-07-25

    Starch/lactic acid graft copolymer (Starch-g-PLA) was prepared by the in situ copolymerization of starch grafted with lactic acid catalyzed with sodium hydroxide, and then mixed with poly(vinyl alcohol) (PVA) to get composite films. The structures of the graft copolymer and composite films were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The mechanical properties, water resistance, and thermal stability were also investigated. It was found that the compatibility of Starch-g-PLA and PVA was better than that of starch and PVA in the composite films. The tensile strength and elongation at break of the Starch-g-PLA/PVA composite film increased by 69.15% and 84.22%, respectively, while the water absorption decreased by 50.39%, which overcame the shortcomings of hydrophilicity and poor mechanical properties of Starch/PVA film. Thermogravimetric analysis (TGA) also showed that the thermal stability of Starch-g-PLA/PVA film was improved compared with Starch/PVA film. Copyright © 2013 Elsevier Ltd. All rights reserved.

  12. Control of composition and crystallinity in hydroxyapatite films deposited by electron cyclotron resonance plasma sputtering

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-01-01

    Hydroxyapatite (HAp) films were deposited by electron cyclotron resonance plasma sputtering under a simultaneous flow of H2O vapor gas. Crystallization during sputter-deposition at elevated temperatures and solid-phase crystallization of amorphous films were compared in terms of film properties. When HAp films were deposited with Ar sputtering gas at temperatures above 460 °C, CaO byproducts precipitated with HAp crystallites. Using Xe instead of Ar resolved the compositional problem, yielding a single HAp phase. Preferentially c-axis-oriented HAp films were obtained at substrate temperatures between 460 and 500 °C and H2O pressures higher than 1×10-2 Pa. The absorption signal of the asymmetric stretching mode of the PO43- unit (ν3) in the Fourier-transform infrared absorption (FT-IR) spectra was the narrowest for films as-crystallized during deposition with Xe, but widest for solid-phase crystallized films. While the symmetric stretching mode of PO43- (ν1) is theoretically IR-inactive, this signal emerged in the FT-IR spectra of solid-phase crystallized films, but was absent for as-crystallized films, indicating superior crystallinity for the latter. The Raman scattering signal corresponding to ν1 PO43- sensitively reflected this crystallinity. The surface hardness of as-crystallized films evaluated by a pencil hardness test was higher than that of solid-phase crystallized films.

  13. Mercuric iodide composite films using polyamide, polycarbonate and polystyrene fabricated by casting

    International Nuclear Information System (INIS)

    Ugucioni, J.C.; Ghilardi Netto, T.; Mulato, M.

    2010-01-01

    Mercuric iodide (HgI 2 ) composite films were obtained by using the casting technique. Insulator polymers such as polyamide, polycarbonate and polystyrene were mixed to HgI 2 crystallites forming a final sub-millimeter thick self-standing film. Fabrication temperature varied from 10 to 100 o C, and total fabrication time reached at most 5 min. The larger the fabrication temperature, the thinner the film and the smaller its electrical resistivity. Electrical characterization was performed in the dark, under UV illumination and under mammographic X-ray exposure. The final properties of the films are discussed and related to fabrication conditions. The optimized composite film might be a better candidate for use as X-ray detector for medical imaging, in place of the single HgI 2 crystalline device.

  14. Tunable multiband ferroelectric devices for reconfigurable RF-frontends

    CERN Document Server

    Zheng, Yuliang

    2013-01-01

    Reconfigurable RF-frontends aim to cope with the continuous pursuit of wider frequency coverage, higher efficiency, further compactness and lower cost of ownership. They are expected to lay the foundations of future software defined or cognitive radios. As a potential enabling technology for the frontends, the tunable ferroelectric devices have shown not only enhanced performance but also new functionalities. This book explores the recent developments in the field. It provides a cross-sectional perspective on the interdisciplinary research. With attention to the devices based on ceramic thick-films and crystal thin-films, the book reviews the adapted technologies of material synthesis, film deposition and multilayer circuitry. Next, it highlights the original classes of thin-film ferroelectric devices, including stratified metal-insulator-metal varactors with suppression of acoustic resonance and programmable bi-stable high frequency capacitors. At the end the book analyzes how the frontends can be reformed b...

  15. Ion plasma deposition of oxide films with graded-stoichiometry composition: Experiment and simulation

    Science.gov (United States)

    Volpyas, V. A.; Tumarkin, A. V.; Mikhailov, A. K.; Kozyrev, A. B.; Platonov, R. A.

    2016-07-01

    A method of ion plasma deposition is proposed for obtaining thin multicomponent films with continuously graded composition in depth of the film. The desired composition-depth profile is obtained by varying the working gas pressure during deposition in the presence of an additional adsorbing screen in the drift space between a sputtered target and substrate. Efficiency of the proposed method is confirmed by Monte Carlo simulation of the deposition of thin films of Ba x Sr1- x TiO3 (BSTO) solid solution. It is demonstrated that, during sputtering of a Ba0.3Sr0.7TiO3 target, the parameter of composition stoichiometry in the growing BSTO film varies in the interval of x = 0.3-0.65 when the gas pressure is changed within 2-60 Pa.

  16. The electrochemical synthesis of polyaniline/polysulfone composite films and electrocatalytic activity for ascorbic acid oxidation

    International Nuclear Information System (INIS)

    Hu Zhongai; Shang Xiuli; Yang Yuying; Kong Chao; Wu Hongying

    2006-01-01

    Polyaniline (PANI)/polysulfone (PSF) composite films with asymmetric porous structure were successfully prepared by electropolymerization. The back face (in contact with the electrode) of the freestanding composite film is green while the outer face is white. The chemical component and the morphology of the surfaces were characterized by FTIR spectra and scanning electron microscopy, respectively. It was shown that replicate films gave reproducible voltammetry in 0.5 M H 2 SO 4 . The influence of the electrolyte and the acidic concentration on the redox peak currents of polyaniline were investigated in detail. The composite film electrode showed good electrocatalytic activity for ascorbic acid, which the anodic overpotential was evidently reduced compared with that obtained at bare Pt electrode. The diffusion coefficient of ascorbic acid was 1.38 x 10 -6 cm 2 s -1

  17. Preparation of smooth, flexible and stable silver nanowires- polyurethane composite transparent conductive films by transfer method

    Science.gov (United States)

    Bai, Shengchi; Wang, Haifeng; Yang, Hui; Zhang, He; Guo, Xingzhong

    2018-02-01

    Silver nanowires (AgNWs)-polyurethane (PU) composite transparent conductive films were fabricated via transfer method using AgNWs conductive inks and polyurethane as starting materials, and the effects of post-treatments including heat treatment, NaCl solution bath and HCl solution bath for AgNWs film on the sheet resistance and transmittance of the composite films were respectively investigated in detail. AgNWs networks are uniformly embedded in the PU layer to improve the adhesion and reduce the surface roughness of AgNWs-PU composite films. Heat treatment can melt and weld the nanowires, and NaCl and HCl solution baths promote the dissolution and re-deposition of silver and the dissolving of the polymer, both which form conduction pathways and improve contact of AgNWs for reducing the sheet resistance. Smooth and flexible AgNWs-PU composite film with a transmittance of 85% and a sheet resistance of 15 Ω · sq‑1 is obtained after treated in 0.5 wt% HCl solution bath for 60 s, and the optoelectronic properties of the resultant composite film can maintain after 1000 cycles of bending and 100 days.

  18. Electrochemical reduction of CO2 on compositionally variant Au-Pt bimetallic thin films

    NARCIS (Netherlands)

    Ma, M.; Hansen, H.A.; Valenti, M.; Wang, Z.; Cao, A.; Dong, M.; Smith, W.A.

    2017-01-01

    The electrocatalytic reduction of CO2 on Au-Pt bimetallic catalysts with different compositions was evaluated, offering a platform for uncovering the correlation between the catalytic activity and the surface composition of bimetallic electrocatalysts. The Au-Pt alloy films were synthesized by a

  19. Influence of Interleaved Films on the Mechanical Properties of Carbon Fiber Fabric/Polypropylene Thermoplastic Composites

    Directory of Open Access Journals (Sweden)

    Jong Won Kim

    2016-05-01

    Full Text Available A laminated composite was produced using a thermoplastic prepreg by inserting an interleaved film with the same type of matrix as the prepreg during the lay-up process to improve the low interlaminar properties, which is a known weakness of laminated composites. Carbon fiber fabric (CFF and polypropylene (PP were used to manufacture the thermoplastic prepregs. Eight prepregs were used to produce the laminated composites. Interleaved films with different thicknesses were inserted into each prepreg. The physical properties of the composite, such as thickness, density, fiber volume fraction (Vf, and void content (Vc, were examined. The tensile strength, flexural strength, interlaminar shear strength (ILSS, impact property, and scanning electron microscopy (SEM were used to characterize the mechanical properties. Compared to the composite without any inserted interleaved film, as the thickness of the inserted interleaved resin film was increased, Vc decreased by 51.45%. At the same time, however, the tensile strength decreased by 8.75%. Flexural strength increased by 3.79% and flexural modulus decreased by 15.02%. Interlaminar shear strength increased by 11.05% and impact strength increased by 15.38%. Fracture toughness of the laminated composite was improved due to insertion of interleaved film.

  20. Influence of Interleaved Films on the Mechanical Properties of Carbon Fiber Fabric/Polypropylene Thermoplastic Composites.

    Science.gov (United States)

    Kim, Jong Won; Lee, Joon Seok

    2016-05-06

    A laminated composite was produced using a thermoplastic prepreg by inserting an interleaved film with the same type of matrix as the prepreg during the lay-up process to improve the low interlaminar properties, which is a known weakness of laminated composites. Carbon fiber fabric (CFF) and polypropylene (PP) were used to manufacture the thermoplastic prepregs. Eight prepregs were used to produce the laminated composites. Interleaved films with different thicknesses were inserted into each prepreg. The physical properties of the composite, such as thickness, density, fiber volume fraction ( V f ), and void content ( V c ), were examined. The tensile strength, flexural strength, interlaminar shear strength (ILSS), impact property, and scanning electron microscopy (SEM) were used to characterize the mechanical properties. Compared to the composite without any inserted interleaved film, as the thickness of the inserted interleaved resin film was increased, V c decreased by 51.45%. At the same time, however, the tensile strength decreased by 8.75%. Flexural strength increased by 3.79% and flexural modulus decreased by 15.02%. Interlaminar shear strength increased by 11.05% and impact strength increased by 15.38%. Fracture toughness of the laminated composite was improved due to insertion of interleaved film.