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Sample records for film electroluminescent tfel

  1. Red electroluminescent process excited by hot holes in SrGa2S4:Ce, Mn thin film

    International Nuclear Information System (INIS)

    Tanaka, Katsu; Okamoto, Shinji

    2009-01-01

    This paper reports the first observation of red electroluminescence (EL) in SrGa 2 S 4 :Ce, Mn thin film. The EL spectrum consists of single broad emission band having a peak wavelength of 665 nm. The dominant EL decay time was 31 μs. The relationship between the applied voltage and the EL waveform was measured in single insulating thin film electroluminescent (TFEL) devices. An asymmetric EL waveform was observed in SrGa 2 S 4 :Ce, Mn TFEL devices under a rectangular applied voltage. The polarity of the EL waveform in these devices was different from the waveform in manganese-activated zinc sulfide ZnS:Mn devices. This indicates that hot holes excite the Mn 2+ ions to cause the red EL.

  2. Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

    2006-01-01

    Ce-doped CaGa 2 S 4 and SrGa 2 S 4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H 2 S and O 2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce 3+ activated CaGa 2 S 4 and SrGa 2 S 4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m 2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O 2 gas stream. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Electroluminescence

    CERN Document Server

    Henisch, H K

    1962-01-01

    Electroluminescence deals with the multiplicity of forms related to electroluminescence phenomena. The book reviews some basic observations of electroluminescence, the Gudden-Pohl and Dechene effects, the electroluminescence phenomena in zinc sulfide phosphors, in silicon carbide, and in compounds composed of elements in groups III and V of the Periodic Table (such as gallium phosphide). The text also explains polarization of free charge carriers, the outline of junction breakdown theory, carrier recombination, and phosphor suspensions. The book describes the growth of zinc sulfide crystals (f

  4. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  5. An inorganic electroluminescent device using calcium phosphate doped with Eu{sup 3+} as the luminescent layer

    Energy Technology Data Exchange (ETDEWEB)

    Koide, Takuhiro [Department of Chemistry and Chemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan); Ito, Michimasa [Tokai Rika Co. Ltd., 3-260 Toyota, Oguchi-cho, Niwa-gun, Aichi 480-0195 (Japan); Kawai, Takahiro [Department of Biochemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan); Matsushima, Yuta, E-mail: ymatsush@yz.yamagata-u.ac.jp [Department of Chemistry and Chemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan)

    2013-03-20

    Highlights: ► A thin film electroluminescent device was fabricated with a calcium phosphate as the light emitting layer. ► The light emitting layer was formed on the BaTiO{sub 3} disk by a spray pyrolysis method. ► Among the examined calcium phosphates, β-Ca{sub 3}(PO{sub 4}){sub 2}:Eu{sup 3+} showed the best photo- and electroluminescent properties. -- Abstract: In this work, the availability of calcium phosphates for the light emitting layer of a thin-film electroluminescent (TFEL) device was investigated. The goal of this work was to develop an electronic device with ordinary materials such as a calcium phosphate, the principal ingredient of the skeleton of the vertebrate. Compositions of 2CaO·P{sub 2}O{sub 5} (Ca{sub 2}P{sub 2}O{sub 7}), 3CaO·P{sub 2}O{sub 5} (Ca{sub 3}(PO{sub 4}){sub 2}) and 4CaO·P{sub 2}O{sub 5} (Ca{sub 4}O(PO{sub 4}){sub 2}) were examined as the candidates for the light emitting layer. Before composing the TFEL device, the photoluminescence (PL) properties of the three compositions were investigated in the powder form to evaluate the performance as the light emitting layer. Among the examined calcium phosphates, Eu-doped β-Ca{sub 3}(PO{sub 4}){sub 2} showed the best PL properties. It showed typical red-emission from Eu{sup 3+}. The PL intensity was enhanced with the heat-treatment temperature and the optimal temperature was 1250 °C. Then, a TFEL device was prepared by a spray pyrolysis method with the β-Ca{sub 3}(PO{sub 4}){sub 2}:Eu{sup 3+} phosphor layer on a BaTiO{sub 3} disk. The TFEL device exhibited the red emission originating in Eu{sup 3+} at 610 nm under applying alternating voltage. Different from the power sample, the intensity of EL decreased with the heat-treatment temperature from 1000 to 1250 °C. The deterioration of EL at the higher temperatures was attributed to chemical interaction between the phosphor layer and the BaTiO{sub 3} disk.

  6. Organic electroluminescence

    CERN Document Server

    Kafafi, Zakya H

    2005-01-01

    Organic light-emitting diode(OLED) technology has achieved significant penetration in the commercial market for small, low-voltage and inexpensive displays. Present and future novel technologies based on OLEDs involve rigid and flexible flat panel displays, solid-state lighting, and lasers. Display applications may range from hand-held devices to large flat panel screens that can be rolled up or hung flat on a wall or a ceiling. Organic Electroluminescence gives an overview of the on-going research in the field of organic light-emitting materials and devices, covering the principles of electroluminescence in organic thin films, as well as recent trends, current applications, and future potential uses. The book begins by giving a background of organic electroluminescence in terms of history and basic principles. It offers details on the mechanism(s) of electroluminescence in thin organic films. It presentsin-depth discussions of the parameters that control the external electroluminescence quantum efficien...

  7. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

    2003-06-01

    White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

  8. Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

    Directory of Open Access Journals (Sweden)

    Valentina V. Utochnikova

    2012-01-01

    Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

  9. A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices.

    Science.gov (United States)

    Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Pira, Nello Li; Lambertini, Vito Guido; Marchese, Leonardo

    2012-11-02

    Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications.

  10. Localized Surface Plasmon-Enhanced Electroluminescence in OLEDs by Self-Assembly Ag Nanoparticle Film

    Science.gov (United States)

    He, Xiaoxiao; Wang, Wenjun; Li, Shuhong; Wang, Qingru; Zheng, Wanquan; Shi, Qiang; Liu, Yunlong

    2015-12-01

    We fabricated Ag nanoparticle (NP) film in organic light emission diodes (OLEDs), and a 23 times increase in electroluminescence (EL) at 518 nm was probed by time-resolved EL measurement. The luminance and relative external quantum efficiency (REQE) were increased by 5.4 and 3.7 times, respectively. There comes a new energy transport way that localized surface plasmons (LSPs) would absorb energy that corresponds to the electron-hole pair before recombination, promoting the formation of electron-hole pair and exciting local surface plasmon resonance (LSPR). The extended lifetime of Alq3 indicates the existence of strong interaction between LSPR and exciton, which decreases the nonradiative decay rate of OLEDs.

  11. Physical processes in thin-film electroluminescent structures based on ZnS:Mn showing self-organized patterns

    International Nuclear Information System (INIS)

    Zuccaro, S.; Raker, Th.; Niedernostheide, F.-J.; Kuhn, T.; Purwins, H.-G.

    2003-01-01

    Physical processes in thin ZnS:Mn films and their relation to the formation of dynamical patterns in the electroluminescence of AC driven films are investigated. The technique of photo-depolarization-spectroscopy is used to investigate defect states in these films and it is shown that specific features in the spectra correlate with the observed self-organized patterns. Furthermore, the time dependence of the dissipative current is measured at the same samples and compared with current waveforms obtained from numerical simulations of a drift-diffusion model. The results are used to discuss the origin of the self-organized processes in ZnS:Mn-films

  12. Investigation of CaTiO3:Pr3+ thin films deposited by radiofrequency reactive magnetron sputtering for electroluminescence application

    International Nuclear Information System (INIS)

    Sarakha, L; Bousquet, A; Tomasella, E; Boutinaud, P; Mahiou, R

    2010-01-01

    In this report we successfully deposited thin films of CaTiO 3 :Pr 3+ by radiofrequency magnetron sputtering. The films were studied and we tried to understand the evolution of their optical and electrical properties. We noticed that the annealing temperature and the deposition pressures have an important influence on these properties. Thin films with good optical and electrical properties have been obtained. These films are transparent and are characterized by an intense red photoluminescence and a low fixed charge density. They are well dedicated for electroluminescence purposes.

  13. Electroluminescent efficiency of alternating current thick film devices using ZnS:Cu,Cl phosphor

    International Nuclear Information System (INIS)

    Sharma, Gaytri; Han, Sang Do; Kim, Jung Duk; Khatkar, Satyender P.; Rhee, Young Woo

    2006-01-01

    ZnS:Cu,Cl phosphor is prepared with the help of low intensity milling of the precursor material in two step firing process. The synthesized phosphor is used for the preparation of alternating current thick film electroluminescent (ACTFEL) devices with screen-printing method. The commission international de l'Eclairge (CIE) color co-ordinates of the ACTFEL devices prepared by these phosphor layers shows a shift from bluish-green to green region with the change in the amount of Cu in the phosphor. The various parameters to improve the efficiency and luminance of the devices have also been investigated. The brightness of the ac thick film EL device depends on the particle size of the phosphor, crystallinity, amount of binding material and applied voltage. The EL device fabricated with phosphor having average particle size of 25 μm shows maximum luminescence, when 60% phosphor concentration is used with respect to binding material. EL intensity is also linearly dependent on frequency. It is due the increase of excitation chances of the host matrix or dopant ions with increasing frequency

  14. Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

    Science.gov (United States)

    Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

    2014-06-01

    Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

  15. Electroluminescence of zinc oxide thin-films prepared via polymeric precursor and via sol-gel methods

    International Nuclear Information System (INIS)

    Lima, S.A.M.; Cremona, M.; Davolos, M.R.; Legnani, C.; Quirino, W.G.

    2007-01-01

    Zinc oxide (ZnO) is an electroluminescent (EL) material that can emit light in different regions of electromagnetic spectrum when electrically excited. Since ZnO is chemically stable, inexpensive and environmentally friendly material, its EL property can be useful to construct solid-state lamps for illumination or as UV emitter. We present here two wet chemical methods to prepare ZnO thin-films: the Pechini method and the sol-gel method, with both methods resulting in crystalline and transparent films with transmittance >85% at 550 nm. These films were used to make thin-film electroluminescent devices (TFELD) using two different insulator layers: lithium fluoride (LiF) or silica (SiO 2 ). All the devices exhibit at least two wide emission bands in the visible range centered at 420 nm and at 380 nm attributed to the electronic defects in the ZnO optical band gap. Besides these two bands, the device using SiO 2 and ZnO film obtained via sol-gel exhibits an additional band in the UV range centered at 350 nm which can be attributed to excitonic emission. These emission bands of ZnO can transfer their energy when a proper dopant is present. For the devices produced the voltage-current characteristics were measured in a specific range of applied voltage

  16. Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

    International Nuclear Information System (INIS)

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2015-01-01

    We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO 2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO 2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO 2 film. This is due to that the 550 °C-annealed CeO 2 film contains more Ce 3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f 1 energy band pertaining to Ce 3+ ions leads to the UV-Vis EL

  17. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  18. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

    Science.gov (United States)

    Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

    2015-07-03

    In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

  19. Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method

    Directory of Open Access Journals (Sweden)

    C. Panatarani

    2016-02-01

    Full Text Available ZnO thin films were fabricated by spray pyrolysis (SP method with p-ZnO : N/n-ZnO:Ga/ITO structure. The X-ray results show that the deposited films have hexagonal wurtzite structure. The EDS results observed that the composition of Ga in ZnO:Ga and N in ZnO:N was 3.73% and 27.73% respectively. The photoluminescence (PL with excitation wave length of 260 nm shows that ZnO:Ga and ZnO:N films emitted UV emission at ∼393 and ∼388 nm, respectively and the films resistivity was 7.12 and 12.80 Ohm-cm respectively. The electroluminescence of the p-ZnO : N/n-ZnO:Ga/ITO structure was obtained by applying forward bias of 5 volt with 30 mA current, resulting in a 3.35 volt threshold bias with the peak electroluminescence in UV-blue range.

  20. [Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

    Science.gov (United States)

    Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

    2010-06-01

    The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

  1. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Hui-Ying Li

    2015-02-01

    Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

  2. Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate

    International Nuclear Information System (INIS)

    He Ying; Wang Junan; Chen Xiaoban; Zhang Wenfei; Zeng Xuyu; Gu Qiuwen

    2010-01-01

    We present a polymer-complexing soft template technique to construct the ZnO-nanowire/polymer light emitting device prototype that exhibits blue electrically driven emission with a relatively low-threshold voltage at room temperature in ambient atmosphere, and the ZnO-nanowire-based LED's emission wavelength is easily tuned by controlling the applied-excitation voltage. The nearly vertically aligned ZnO-nanowires with polymer film were used as emissive layers in the devices. The method uses polymer as binder in the LED device and dispersion medium in the luminescence layer, which stabilizes the quasi-arrays of ZnO nanowires embedding in a thin polymer film on silicon substrate and passivates the surface of ZnO nanocrystals, to prevent the quenching of luminescence. Additionally, the measurements of electrical properties showed that ZnO-nanowire/polymer film could significantly improve the conductivity of the film, which could be attributed to an increase in both Hall mobility and carrier concentration. The results indicated that the novel technique is a low-cost process for ZnO-based UV or blue light emission and reduces the requirement for achieving robust p-doping of ZnO film. It suggests that such ZnO-nanowire/polymer-based LEDs will be suitable for the electro-optical application.

  3. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  4. Hybrid electroluminescent devices

    Science.gov (United States)

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  5. Plasmonic enhancement of electroluminescence

    Science.gov (United States)

    Guzatov, D. V.; Gaponenko, S. V.; Demir, H. V.

    2018-01-01

    Here plasmonic effect specifically on electroluminescence (EL) is studied in terms of radiative and nonradiative decay rates for a dipole near a metal spherical nanoparticle (NP). Contribution from scattering is taken into account and is shown to play a decisive role in EL enhancement owing to pronounced size-dependent radiative decay enhancement and weak size effect on non-radiative counterpart. Unlike photoluminescence where local incident field factor mainly determines the enhancement possibility and level, EL enhancement is only possible by means of quantum yield rise, EL enhancement being feasible only for an intrinsic quantum yield Q0 red-orange range only. Independently of positive effect on quantum yield, metal nanoparticles embedded in an electroluminescent device will improve its efficiency at high currents owing to enhanced overall recombination rate which will diminish manifestation of Auger processes. The latter are believed to be responsible for the known undesirable efficiency droop in semiconductor commercial quantum well based LEDs at higher current. For the same reason plasmonics can diminish quantum dot photodegradation from Auger process induced non-radiative recombination and photoionization thus opening a way to avoid negative Auger effects in emerging colloidal semiconductor LEDs.

  6. Modelling electroluminescence in liquid argon

    International Nuclear Information System (INIS)

    Stewart, D Y; Barker, G J; Bennieston, A J; Harrison, P F; McConkey, N; Morgan, B; Ramachers, Y A; Lightfoot, P K; Robinson, M; Spooner, N J C; Thompson, L

    2010-01-01

    We present Monte-Carlo simulations of electron transport through liquid argon motivated by our recent observation of electroluminescence light emanating from a thick gaseous electron multiplier (THGEM) in a liquid argon volume. All known elastic and inelastic reaction cross-sections have been accounted for, providing electroluminescence light yield predictions for arbitrary electrostatic fields. This study concludes that the large field gradients needed to produce electroluminescence cannot be accounted for by straightforward electrostatic field calculations based on ideal THGEM holes, suggesting that further experimental investigations are required.

  7. Crystal growth of electroluminescent ZnS:Cu,Cl phosphor and its TiO2 coating by sol-gel method for thick-film EL device

    International Nuclear Information System (INIS)

    Han, Sang-Do; Singh, Ishwar; Singh, Devender; Lee, You-He; Sharma, Gaytri; Han, Chi-Hwan

    2005-01-01

    Bigger-sized spherical particle of ZnS:Cu,Cl to be employed for electroluminescent (EL) device has been synthesized using a new eutectic mixture as flux. The best composition of the flux was the mixture of BaCl 2 .2H 2 O, MgCl 2 .6H 2 O and NaCl in the mole percentage ratio of 13.8:39.9:46.2 and when the total amount of the mixture was 6% of the total weight of ZnS. The phosphor was synthesized firing at higher temperatures in two steps. First step firing at 1150 deg. C gave the hexagonal phase of the ZnS phosphor particles. Low intensity ball-milling of the phosphor pastes in solvents converted hexagonal phase partially to the cubic phase of the phosphor, which is an essential step. Mixing with copper sulfate or copper(I) halides and magnesium chloride and then firing (second step) at 750 deg. C gave a phosphor with better luminescent characteristics and converting to almost 100% cubic phase. The phosphor particles having size >0.020 mm size were sieved and coated with TiO 2 made by sol-gel process using titanium(IV)-isopropoxide as a precursor. The phosphor particles were coated twice with the TiO 2 sol and finally calcined at 400 deg C in nitrogen atmosphere. The EL devices were fabricated with the synthesized phosphor using a screen-printing method

  8. Broadband electroluminescence in fullerene crystals

    International Nuclear Information System (INIS)

    Werner, A.T.; Anders, J.; Byrne, H.J.; Maser, W.K.; Kaiser, M.; Mittelbach, A.; Roth, S.

    1993-01-01

    The observation of electroluminescence from crystalline fullerenes is described. A broad band emission spectrum, extending from 400nm to 1100nm is observed. The spectrum has a primary maximum at 920nm and a weaker feature centered on 420nm. The spectral characteristics are independent of the applied field and the longer wavelength region is identical to that measured in the high excitation density photoluminescence spectrum. In addition, the electroluminescence intensity increases with the cube of the injection current, strengthening the association to the nonlinear phenomena observed in the highly excited state of fullerenes. (orig.)

  9. Preparation and characterization of electroluminescent devices based on complexes of β-diketonates of Tb3+, Eu3+, Gd3+ ions with macrocyclic ligands and UO22+ films

    International Nuclear Information System (INIS)

    Gibelli, Edison Bessa

    2010-01-01

    Complexes containing Rare Earth ions are of great interest in the manufacture of electro luminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR 3+ ) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth β-diketonate complexes (Tb 3+ , Eu 3+ and Gd 3+ ) and (tta - thenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO 2 2+ . The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition). (author)

  10. Green–white electroluminescence and green photoluminescence of zinc complexes

    Energy Technology Data Exchange (ETDEWEB)

    Janghouri, Mohammad; Mohajerani, Ezeddin [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of); Amini, Mostafa M.; Najafi, Ezzatollah [Department of Chemistry, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of)

    2014-10-15

    A series of zinc complexes has been synthesized and utilized as fluorescent materials in organic light-emitting diodes (OLEDs). All prepared complexes were characterized by elemental analysis (CHN), UV–vis, FT-IR and {sup 1}H NMR spectroscopy. The energy levels of zinc complexes were determined by cyclic voltammetry measurements. Devices with fundamental structure of ITO/PVK:PBD (50 nm)/zinc complexes/BCP (5 nm)/Alq{sub 3} (25 nm)/Al (180 nm) were fabricated. A green electroluminescence was obtained from thin film complexes at 25 nm thickness. When thickness of the complex bis(2-methylquinolin-8-olato)-bis[(acetato)-(methanol)zinc(II)] (B) in thin film decreased from 25 nm to 20, 18, and 12 nm, a white electroluminescence obtained. The white emission which was composed of blue and green attributed to the PVK:PBD blend and thickness of complex, respectively. With 12 nm thickness of complex, a maximum luminance of 4530 cd/m{sup 2} at a current density 398.32 mA/cm{sup 2} with CIE coordinates of 0.22 and 0.36 at 20 V was achieved. - Highlights: • Several new zinc complexes have been synthesized and utilized as fluorescent materials in OLEDs. • Photoluminescence emission of zinc complexes showed a red shift in respect to PVK:PBD blend. • Green electroluminescence emission from zinc complexes was achieved. • White emission has been obtained for an OLED by changing thickness of the zinc complex.

  11. Green–white electroluminescence and green photoluminescence of zinc complexes

    International Nuclear Information System (INIS)

    Janghouri, Mohammad; Mohajerani, Ezeddin; Amini, Mostafa M.; Najafi, Ezzatollah

    2014-01-01

    A series of zinc complexes has been synthesized and utilized as fluorescent materials in organic light-emitting diodes (OLEDs). All prepared complexes were characterized by elemental analysis (CHN), UV–vis, FT-IR and 1 H NMR spectroscopy. The energy levels of zinc complexes were determined by cyclic voltammetry measurements. Devices with fundamental structure of ITO/PVK:PBD (50 nm)/zinc complexes/BCP (5 nm)/Alq 3 (25 nm)/Al (180 nm) were fabricated. A green electroluminescence was obtained from thin film complexes at 25 nm thickness. When thickness of the complex bis(2-methylquinolin-8-olato)-bis[(acetato)-(methanol)zinc(II)] (B) in thin film decreased from 25 nm to 20, 18, and 12 nm, a white electroluminescence obtained. The white emission which was composed of blue and green attributed to the PVK:PBD blend and thickness of complex, respectively. With 12 nm thickness of complex, a maximum luminance of 4530 cd/m 2 at a current density 398.32 mA/cm 2 with CIE coordinates of 0.22 and 0.36 at 20 V was achieved. - Highlights: • Several new zinc complexes have been synthesized and utilized as fluorescent materials in OLEDs. • Photoluminescence emission of zinc complexes showed a red shift in respect to PVK:PBD blend. • Green electroluminescence emission from zinc complexes was achieved. • White emission has been obtained for an OLED by changing thickness of the zinc complex

  12. Electroluminescence Efficiency Enhancement using Metal Nanoparticles

    National Research Council Canada - National Science Library

    Soref, Richard A; Khurgin, J. B; Sun, G

    2008-01-01

    We apply the "effective mode volume" theory to evaluate enhancement of the electroluminescence efficiency of semiconductor emitters placed in the vicinity of isolated metal nanoparticles and their arrays...

  13. Enhanced luminance for inorganic electroluminescent devices with a charged electret

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Chen, Kuo-Feng [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Display Technology Center/Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC (China); Chien, Yu-Han; Chang, Chin-Chia; Chuang, Meng-Ying [Display Technology Center/Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC (China)

    2013-09-15

    This work proposes a novel inorganic electroluminescent (IEL) device with an electric field built-in (EFBI) technique to reduce its driving voltage and enhance its luminance. The EFBI technique was performed by charging an electret comprising a silicon dioxide film at different temperatures (25–150 °C) in powder electroluminescent (PDEL) devices. The driving voltage of the EFBI-PDEL device decreased by 61.4 V (or 20.5%) under the brightness of 269 cd/m{sup 2}, and its brightness increased by 128 cd/m{sup 2} (or 47%) at ac 300 V. The efficiency of the EFBI-PDEL device significantly increased by 0.827 lm/W (or 45.5%) at ac 300 V. The proposed EFBI-PDEL device has advantages of a low-temperature process and low cost, and potential for large-area display applications. -- Highlights: • An electric-field built-in powder electroluminescent (EFBI-PDEL) device is proposed. • The EFBI technique is performed by charging an electrets. • The driving voltage of the EFBI-PDEL device decreased by 20.5%. • The brightness of the EFBI-PDEL device increased by 47%. • The efficiency of the EFBI-PDEL device increased by 45.5%.

  14. Polymer matrix electroluminescent materials and devices

    Science.gov (United States)

    Marrocco, III, Matthew L.; Motamedi, Farshad J [Claremont, CA; Abdelrazzaq, Feras Bashir [Covina, CA; Abdelrazzaq, legal representative, Bashir Twfiq

    2012-06-26

    Photoluminescent and electroluminescent compositions are provided which comprise a matrix comprising aromatic repeat units covalently coordinated to a phosphorescent or luminescent metal ion or metal ion complexes. Methods for producing such compositions, and the electroluminescent devices formed therefrom, are also disclosed.

  15. Organic solution-processible electroluminescent molecular glasses for non-doped standard red OLEDs with electrically stable chromaticity

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Xiaoman; Zuo, Weiwei; Liu, Yingliang, E-mail: liuylxn@sohu.com; Zhang, Zhenru; Zeng, Cen; Xu, Shengang; Cao, Shaokui, E-mail: caoshaokui@zzu.edu.cn

    2015-10-15

    Highlights: • The D–A–D electroluminescent molecular glasses are synthesized. • Non-doped red electroluminescent film is fabricated by spin-coating. • Red OLED shows stable wavelength, luminous efficiency and chromaticity. • CIE1931 coordinate is in accord with standard red light in PAL system. - Abstract: Organic light-emitting molecular glasses (OEMGs) are synthesized through the introduction of nonplanar donor and branched aliphatic chain into electroluminescent emitters. The target OEMGs are characterized by {sup 1}H NMR, {sup 13}C NMR, IR, UV–vis and fluorescent spectra as well as elemental analysis, TG and DSC. The results indicated that the optical, electrochemical and electroluminescent properties of OEMGs are adjusted successfully by the replacement of electron-donating group. The non-doped OLED device with a standard red electroluminescent emission is achieved by spin-coating the THF solution of OEMG with a triphenylamine moiety. This non-doped red OLED device takes on an electrically stable electroluminescent performance, including the stable maximum electroluminescent wavelength of 640 nm, the stable luminous efficiency of 2.4 cd/A and the stable CIE1931 coordinate of (x, y) = (0.64, 0.35), which is basically in accord with the CIE1931 coordinate (x, y) = (0.64, 0.33) of standard red light in PAL system.

  16. Liquid crystalline networks for electroluminescent displays

    International Nuclear Information System (INIS)

    Contoret, A.E.A.

    2001-09-01

    This work presents the first low molar mass organic electroluminescent (EL) material to form a nematic glass and then emit plane-polarised light from the vitrified state on application of an electric field. Photocrosslinkable molecules are also discussed which form insoluble films on illumination with ultra-violet light. This approach combines the ease of deposition of small molecules with the robustness and stability of polymers, allowing simple fabrication of multi-layer EL devices and photo-patterning. A range of conjugated low molar-mass molecules are considered, containing the anthracene, perylene and fluorene cores, with the aims of producing a general recipe for efficient EL, based on ordered, stable nematics at room temperature. Many physical properties are compared and molecular mechanics modeling is used to represent molecular geometries. An acrylate and several diene photo-polymerisable derivatives of the fluorenes undergo photo-crosslinking. Infrared and photoluminescence spectroscopy is used to examine crosslinking in detail and to optimise exposure conditions. The diene shows no significant degradation for an optimal exposure, but requires a high fluence of 100 Jcm -2 to form an insoluble film. A doped photo-alignment layer is used for the first time to obtain polarised El with ratio 11:1 and 80 cdm -2 brightness from the crosslinked diene. The insoluble crosslinked network allows spin coating of an electron transporting over-layer, resulting in increased brightness. Complex impedance spectroscopy and time of flight measurements confirm good material properties with complete depletion of the crosslinkable diene molecule and non-dispersive conduction. Finally, a novel deposition technique, pulsed laser deposition (PLD), is presented, as an alternative to spin coating or vapour deposition. Minimal degradation is observed for optimised deposition conditions and a PLD film is successfully demonstrated in an EL device. (author)

  17. Dispenser printed electroluminescent lamps on textiles for smart fabric applications

    Science.gov (United States)

    de Vos, Marc; Torah, Russel; Tudor, John

    2016-04-01

    Flexible electroluminescent (EL) lamps are fabricated onto woven textiles using a novel dispenser printing process. Dispenser printing utilizes pressurized air to deposit ink onto a substrate through a syringe and nozzle. This work demonstrates the first use of this technology to fabricate EL lamps. The luminance of the dispenser printed EL lamps is compared to screen-printed EL lamps, both printed on textile, and also commercial EL lamps on polyurethane film. The dispenser printed lamps are shown to have a 1.5 times higher luminance than the best performing commercially available lamp, and have a comparable performance to the screen-printed lamps.

  18. Dispenser printed electroluminescent lamps on textiles for smart fabric applications

    International Nuclear Information System (INIS)

    De Vos, Marc; Torah, Russel; Tudor, John

    2016-01-01

    Flexible electroluminescent (EL) lamps are fabricated onto woven textiles using a novel dispenser printing process. Dispenser printing utilizes pressurized air to deposit ink onto a substrate through a syringe and nozzle. This work demonstrates the first use of this technology to fabricate EL lamps. The luminance of the dispenser printed EL lamps is compared to screen-printed EL lamps, both printed on textile, and also commercial EL lamps on polyurethane film. The dispenser printed lamps are shown to have a 1.5 times higher luminance than the best performing commercially available lamp, and have a comparable performance to the screen-printed lamps. (paper)

  19. Efficient electroluminescence from a perylenediimide fluorophore obtained from a simple solution processed OLED

    International Nuclear Information System (INIS)

    Cespedes-Guirao, F J; Fernandez-Lazaro, F; Sastre-Santos, A; Garcia-Santamaria, S; Bolink, H J

    2009-01-01

    Simple solution processed organic light emitting diodes are used to screen the performance of two types of highly efficient, narrow band red emitting fluorescent perylenediimides (PDIs). PDIs substituted at the diimide positions seem to form aggregates in the thin film architecture as evidenced by the shifted electroluminescent spectrum. When substituted on the bay position and when used both as the emitting and the electron transporting specie, bright electroluminescence with a narrow width around 610 nm reaching 500 cd m -2 at moderate voltages was observed, demonstrating the usefulness of these fluorophores for OLED applications.

  20. Electroluminescence from single-wall carbon nanotube network transistors.

    Science.gov (United States)

    Adam, E; Aguirre, C M; Marty, L; St-Antoine, B C; Meunier, F; Desjardins, P; Ménard, D; Martel, R

    2008-08-01

    The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.

  1. Double peak spectra in spontaneous edge electroluminescence

    Czech Academy of Sciences Publication Activity Database

    Zavadil, Jiří; Žďánský, Karel

    1993-01-01

    Roč. 36, č. 11 (1993), s. 1623-1632 ISSN 0038-1101 R&D Projects: GA AV ČR IAA167108 Keywords : light emitting diodes * electroluminescence * optical waveguide theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.871, year: 1993

  2. Direct current electroluminescence in rare-earth-doped zinc sulphide

    International Nuclear Information System (INIS)

    Bryant, F.J.; Krier, A.

    1984-01-01

    Some of the properties and characteristics of rare-earth-doped zinc sulphide DCEL devices are reported. Two types of devices are discussed, co-evaporated ZnS:RE thin films and ion implanted ZnS:RE single crystal diodes. The thin film devices exhibit bright DCEL of various colours at low applied voltages (typically approximately 12 V). A study of the spectral intensities and lifetimes of the Er 3+ ion in ZnS:Er 3+ thin films is consistent with a Boltzmann energy distribution amongst the conduction electrons present in these devices. The ZnS:RE single crystal diodes fabricated in this laboratory by ion implantation are also capable of various colour DCEL. By comparing the EL emission obtained from the different rare earth dopants, erbium and neodymium are identified as the most efficient luminescence centres. Further consideration of the EL emission spectra gives evidence for the presence of inter-conduction band hot electron transitions in those devices containing rare earth dopants which are inefficent electroluminescence centres. These findings can be explained in terms of Auger processes occurring in rare earth complexes. (author)

  3. A Stretchable Alternating Current Electroluminescent Fiber

    Directory of Open Access Journals (Sweden)

    Dan Hu

    2018-01-01

    Full Text Available Flexible, stretchable electroluminescent fibers are of significance to meet the escalating requirements of increasing complexity and multifunctionality of smart electronics. We report a stretchable alternating current electroluminescent (ACEL fiber by a low-cost and all solution-processed scalable process. The ACEL fiber provides high stretchability, decent light-emitting performance, with excellent stability and nearly zero hysteresis. It can be stretched up to 80% strain. Our ACEL fiber device maintained a stable luminance for over 6000 stretch-release cycles at 50% strain. The mechanical stretchability and optical stability of our ACEL fiber device provides new possibilities towards next-generation stretchable displays, electronic textiles, advanced biomedical imaging and lighting, conformable visual readouts in arbitrary shapes, and novel health-monitoring devices.

  4. Organic Electroluminescent Sensor for Pressure Measurement

    Directory of Open Access Journals (Sweden)

    Tomohide Niimi

    2012-10-01

    Full Text Available We have proposed a novel concept of a pressure sensor called electroluminescent pressure sensor (ELPS based on oxygen quenching of electroluminescence. The sensor was fabricated as an organic light-emitting device (OLED with phosphorescent dyes whose phosphorescence can be quenched by oxygenmolecules, and with a polymer electrode which permeates oxygen molecules. The sensor was a single-layer OLED with Platinum (II octaethylporphine (PtOEP doped into poly(vinylcarbazole (PVK as an oxygen sensitive emissive layer and poly(3,4-ethylenedioxythiophene mixed with poly(styrenesulfonate (PEDOT:PSS as an oxygen permeating polymer anode. The pressure sensitivity of the fabricated ELPS sample was equivalent to that of the sensor excited by an illumination light source. Moreover, the pressure sensitivity of the sensor is equivalent to that of conventional pressure-sensitive paint (PSP, which is an optical pressure sensor based on photoluminescence.

  5. Synthesis and fabrication of Y{sub 2}O{sub 3}:Tb{sup 3+} and Y{sub 2}O{sub 3}:Eu{sup 3+} thin films for electroluminescent applications: Optical and structural characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Alarcón-Flores, G., E-mail: alar_fbeto@yahoo.com [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); García-Hipólito, M. [Instituto de Investigaciones en Materiales, UNAM, Apdo. Postal 70-360, Delegación Coyoacán, C.P. 04150, México D.F. (Mexico); Aguilar-Frutis, M. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); Carmona-Téllez, S. [Instituto de Física, UNAM, Coyoacán, C.P. 04150, México D.F. (Mexico); Martinez-Martinez, R. [Universidad Tecnológica de la Mixteca, Carretera Acatlima Km 2.5, Huajuapan de León Oaxaca, C.P. 69000, México (Mexico); Campos-Arias, M.P. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); Zaleta-Alejandre, E. [Universidad Autónoma del Estado de Hidalgo-Escuela Superior de Apan, Carretera Apan-Calpulalpan Km. 8, C.P. 43920, Apan, Hidalgo (Mexico); and others

    2015-01-15

    Terbium, europium and yttrium β diketonates have been synthesized from acetylacetone and inorganic metal salts and used as precursors for the deposition of Tb{sup 3+} or Eu{sup 3+} doped Y{sub 2}O{sub 3} polycrystalline films by the ultrasonic spray pyrolysis technique. The films were deposited on c-Si substrates at temperatures in the 400–550 °C range. The optical and structural characterization of these films as a function of substrate temperature and Tb{sup 3+} and Eu{sup 3+} concentration was carried out by means of photoluminescence (PL), cathodoluminescence (CL), infrared (IR), ellipsometry, and UV–visible spectroscopy and atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and X ray diffraction (XRD) measurements respectively. The PL intensity from these films was found to depend on deposition temperature. Films deposited above 450 °C exhibited the characteristic PL peaks associated with either Tb{sup 3+} or Eu{sup 3+} intra electronic energy levels transitions. The most intense PL emission was found for dopant concentration of 10 at% for Tb{sup 3+} and at 8 at% for Eu{sup 3+} ions into precursor solution. In both cases concentration quenching of the PL emission was observed for concentrations above these values. The films had a refractive index (1.81), low average surface roughness (∼62 Å) and a UV–Vis. transmission of the order of 90 %T. - Highlights: • Terbium, europium and yttrium β diketonates have been synthesized. • Luminescent thin films of Y{sub 2}O{sub 3}:Tb{sup 3+} and Y{sub 2}O{sub 3}:Eu{sup 3+} were obtained. • Optical and structural characteristics of these thin films are presented. • The films had a refractive index (1.81) and low average surface roughness (∼62 Å)

  6. Electroluminescence from graphene excited by electron tunneling

    International Nuclear Information System (INIS)

    Beams, Ryan; Bharadwaj, Palash; Novotny, Lukas

    2014-01-01

    We use low-energy electron tunneling to excite electroluminescence in single layer graphene. Electrons are injected locally using a scanning tunneling microscope and the luminescence is analyzed using a wide-angle optical imaging system. The luminescence can be switched on and off by inverting the tip–sample bias voltage. The observed luminescence is explained in terms of a hot luminescence mechanism. (paper)

  7. Electroluminescence of Zn{sub 2}GeO{sub 4}:Mn through SiC whisker electric field enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Wagstaff, Brandon, E-mail: wagstabj@mcmaster.ca [McMaster University, Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada); Kitai, Adrian, E-mail: kitaia@mcmaster.ca [McMaster University, Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada); McMaster University, Department of Materials Science and Engineering, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada)

    2015-11-15

    Alternating current (AC) electroluminescence of thin film oxide phosphors is well known. However in this work electroluminescence of bulk oxide powder phosphors is achieved. A new type of AC Electroluminescent (ACEL) device has been created and developed by integrating SiC whiskers into a phosphor matrix composed of manganese-activated zinc germanate (Zn{sub 2}GeO{sub 4}:Mn{sup 2+}). The conductive SiC whiskers enhance the average electric field in specific regions of the phosphor such that localized breakdown of the phosphor occurs, thus emitting green light. This field enhancement allows light emission to occur in thick film oxide powder phosphors and is notably the first time that bright and reasonably efficient electroluminescence of zinc germanate has been observed without using expensive thin film deposition techniques. Light emission has been achieved in thick pressed pellets using surface-deposited electrodes and the brightness-voltage characteristics of light emission are shown to be consistent with field emission of carriers from the embedded whiskers. - Highlights: • A new electroluminescent phosphor, Zn{sub 2}GeO{sub 4}Mn{sup 2+}+SiC whiskers, is proposed. • A procedure is described to fabricate a solid sample of this composite material. • Under an AC voltage, green light is emitted only in samples containing the SiC whiskers. • A brightness of 25 Cd/m{sup 2} and efficiency of 0.25 Lm/W is observed 9.6×10{sup 6} V/m. • This is notably the first time that ACEL has been observed in bulk Zn{sub 2}GeO{sub 4}Mn{sup 2+}.

  8. Electroluminescence spectra of an STM-tip-induced quantum dot

    NARCIS (Netherlands)

    Croitoru, M.D.; Gladilin, V.N.; Fomin, V.; Devreese, J.T.; Kemerink, M.; Koenraad, P.M.; Sauthoff, K.; Wolter, J.H.; Long, A.R.; Davies, J.H.

    2003-01-01

    We analyse the electroluminescence measurements performed on a STM-tipImduced quantum dot in a GaAs layer. Positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the electron tunnelling current even in the case when the current

  9. Influence of surface wettability on cathode electroluminescence of porous silicon

    International Nuclear Information System (INIS)

    Goryachev, D.N.; Sreseli, O.M.; Belyakov, L.V.

    1997-01-01

    Influence of porous silicon wettability on efficiency of its cathode electroluminescence in electrolytes was investigated. It was revealed that increase of porous silicon wettability by electrolyte improved contact with a sublayer and provided generation of sufficient quantity of charge carriers. Diffusion - ionic, not electronic mechanism of charge transfer to the centers of micro crystallite electroluminescence is observed in porous silicon - electrolyte systems

  10. New electroluminescent carbazole-containing conjugated polymer: synthesis, photophysics, and electroluminescence

    Czech Academy of Sciences Publication Activity Database

    Cimrová, Věra; Ulbricht, C.; Dzhabarov, Vagif; Výprachtický, Drahomír; Egbe, D. A. M.

    2014-01-01

    Roč. 55, č. 24 (2014), s. 6220-6226 ISSN 0032-3861 R&D Projects: GA ČR GAP106/12/0827; GA ČR(CZ) GA13-26542S Institutional support: RVO:61389013 Keywords : carbazole-containing conjugated polymer * synthesis * photophysics and electroluminescence Subject RIV: CD - Macromolecular Chemistry Impact factor: 3.562, year: 2014

  11. High-Color-Quality White Top-Emitting Organic Electroluminescent Devices Based on Both Exciton and Electroplex Emission

    Science.gov (United States)

    Zhang, Mingxiao; Chen, Zhijian; Xiao, Lixin; Qu, Bo; Gong, Qihuang

    2011-08-01

    A high-color-quality white top-emitting organic electroluminescent device (TOLED) with a simple structure was fabricated using both exciton and electroplex emission. White emission was achieved by combining the exciton emission of 4,4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl (DPVBi) and the broad band emission of electroplex generated between DPVBi and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The white emission spectra showed excellent stability at different bias voltages. By inserting a blend film of DPVBi:BCP and adjusting the ratio of DPVBi to BCP in the blend film, the CIE coordinates of the white emission can be tuned to (0.30, 0.33) and the electroluminescence efficiency can also be enhanced.

  12. Flexible electroluminescent device with inkjet-printed carbon nanotube electrodes

    Science.gov (United States)

    Azoubel, Suzanna; Shemesh, Shay; Magdassi, Shlomo

    2012-08-01

    Carbon nanotube (CNTs) inks may provide an effective route for producing flexible electronic devices by digital printing. In this paper we report on the formulation of highly concentrated aqueous CNT inks and demonstrate the fabrication of flexible electroluminescent (EL) devices by inkjet printing combined with wet coating. We also report, for the first time, on the formation of flexible EL devices in which all the electrodes are formed by inkjet printing of low-cost multi-walled carbon nanotubes (MWCNTs). Several flexible EL devices were fabricated by using different materials for the production of back and counter electrodes: ITO/MWCNT and MWCNT/MWCNT. Transparent electrodes were obtained either by coating a thin layer of the CNTs or by inkjet printing a grid which is composed of empty cells surrounded by MWCNTs. It was found that the conductivity and transparency of the electrodes are mainly controlled by the MWCNT film thickness, and that the dominant factor in the luminance intensity is the transparency of the electrode.

  13. A simulation toolkit for electroluminescence assessment in rare event experiments

    CERN Document Server

    Oliveira, C A B; Veenhof, R; Biagi, S; Monteiro, C M B; Santos, J M F dos; Ferreira, A L; Veloso, J F C A

    2011-01-01

    A good understanding of electroluminescence is a prerequisite when optimising double-phase noble gas detectors for Dark Matter searches and high-pressure xenon TPCs for neutrinoless double beta decay detection. A simulation toolkit for calculating the emission of light through electron impact on neon, argon, krypton and xenon has been developed using the Magboltz and Garfield programs. Calculated excitation and electroluminescence efficiencies, electroluminescence yield and associated statistical fluctuations are presented as a function of electric field. Good agreement with experiment and with Monte Carlo simulations has been obtained.

  14. Bias-polarity-dependent UV/visible transferable electroluminescence from ZnO nanorod array LED with graphene oxide electrode supporting layer

    Science.gov (United States)

    Liu, Weizhen; Wang, Wei; Xu, Haiyang; Li, Xinghua; Yang, Liu; Ma, Jiangang; Liu, Yichun

    2015-09-01

    A simple top electrode preparation process, employing continuous graphene oxide films as electrode supporting layers, was adopted to fabricate a ZnO nanorod array/p-GaN heterojunction LED. The achieved LED demonstrated different electroluminescence behaviors under forward and reverse biases: a yellow-red emission band was observed under forward bias, whereas a blue-UV emission peak was obtained under reverse bias. Electroluminescence spectra under different currents and temperatures, as well as heterojunction energy-band alignments, reveal that the yellow-red emission under forward bias originates from recombinations related to heterointerface defects, whereas the blue-UV electroluminescence under reverse bias is ascribed to transitions from near-band-edge and Mg-acceptor levels in p-GaN.

  15. Exciplex electroluminescence and photoluminescence spectra of the new organic materials based on zinc complexes of sulphanylamino-substituted ligands.

    Science.gov (United States)

    Kaplunov, Mikhail G; Krasnikova, Svetlana S; Nikitenko, Sergey L; Sermakasheva, Natalia L; Yakushchenko, Igor K

    2012-04-03

    We have investigated the electroluminescence spectra of the electroluminescent devices based on the new zinc complexes of amino-substituted benzothiazoles and quinolines containing the C-N-M-N chains in their chelate cycles. The spectra exhibit strong exciplex bands in the green to yellow region 540 to 590 nm due to interaction of the excited states of zinc complexes and triaryl molecules of the hole-transporting layer. For some devices, the intrinsic luminescence band of 460 nm in the blue region is also observed along with the exciplex band giving rise to an almost white color of the device emission. The exciplex band can be eliminated if the material of the hole-transporting layer is not a triarylamine derivative. We have also found the exciplex emission in the photoluminescence spectra of the films containing blends of zinc complex and triphenylamine material.

  16. Electroluminescent devices based on rare-earth tetrakis β-diketonate complexes

    International Nuclear Information System (INIS)

    Quirino, W.G.; Legnani, C.; Santos, R.M.B. dos; Teixeira, K.C.; Cremona, M.; Guedes, M.A.; Brito, H.F.

    2008-01-01

    In this paper the synthesis, photoluminescence and electroluminescence investigation of the novel tetrakis β-diketonate of rare-earth complexes such as, M[Eu(dbm) 4 ] and M[Tb(acac) 4 ] with a variety of cationic ligands, M = Li + , Na + and K + have been investigated. The emission spectra of the Eu 3+ and Tb 3+ complexes displayed characteristic narrow bands arising from intraconfigurational transitions of trivalent rare-earth ions and exhibited red color emission for the Eu 3+ ion ( 5 D 0 → 7 F J , J = 0-6) and green for the Tb 3+ ion ( 5 D 4 → 7 F J , J = 6-0). The lack of the broaden emission bands arising from the ligands suggests the efficient intramolecular energy transfer from the dbm and acac ligands to Eu 3+ and Tb 3+ ions, respectively. In accordance to the expected, the values of PL quantum efficiency (η) of the emitting 5 D 0 state of the tetrakis(β-diketonate) complexes of Eu 3+ were higher compared with those tris-complexes. Therefore, organic electroluminescent (EL) devices were fabricated with the structure as follows: indium tin oxide (ITO)/hole transport layer (HTL) NPB or MTCD/emitter layer M[RE(β-diketonate) 4 ] complexes)/Aluminum (Al). All the films were deposited by thermal evaporation carried out in a high vacuum environment system. The OLED light emission was independent of driving voltage, indicating that the combination of charge carriers generates excitons within the M[RE(β-diketonate) 4 ] layers, and the energy is efficiently transferred to RE 3+ ion. As a best result, a pure red and green electroluminescent emission was observed from the Eu 3+ and Tb 3+ devices, confirmed by (X,Y) color coordinates

  17. Electroluminescence from GaN-polymer heterojunction

    International Nuclear Information System (INIS)

    Chitara, Basant; Lal, Nidhi; Krupanidhi, S.B.; Rao, C.N.R.

    2011-01-01

    Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). - Highlights: → We use a polymer Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction. → I-V characteristics of the device fabricated by us exhibits excellent rectification. → The p-type polymer also emits yellow light, which when combined in proper composition with GaN, give rise to white light. → Device can be readily fabricated by just spin coating the polymer over GaN reducing the cost of the device.

  18. Photo and electroluminescence of porous silicon layers

    International Nuclear Information System (INIS)

    Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

    1995-01-01

    Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

  19. Enhanced electroluminescence of organic light-emitting diodes by using halloysite nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mondragón, Margarita, E-mail: mmondragon@ipn.mx [Instituto Politécnico Nacional, ESIME Azcapotzalco, Av. de las Granjas 682, 02250 México D.F. (Mexico); Moggio, Ivana; León, Arxel de; Arias, Eduardo [Centro de Investigación en Química Aplicada, CIQA, Blvd. Enrique Reyna 140, 25253 Saltillo, Coahuila (Mexico)

    2013-12-15

    The effect of halloysite clay nanotubes (HNTs) on the optical and electronic properties of poly(2-methoxy-5-[2′-ethylhexyloxy]-1,4-phenylenevinylene) (MEH-PPV) have been investigated. The UV–vis absorption band of the conjugated polymer remains unchanged upon the incorporation of halloysite nanotubes (HNTs). Photoluminescence (PL) measurements reveal a decreased quantum yield in the MEH-PPV/HNTs nanocomposites, compared with bulk MEH-PPV. Improvement of the electroluminescence of organic light-emitting diodes (OLEDs) was achieved by incorporating high contents of HNTs. The nanotubes act to enhanced polymer aggregates, as revealed by AFM analysis, thus increasing charge transport and therefore electroluminescence but also decreasing PL quantum yield. -- Highlights: • Thin films of nanocomposites of MEH-PPV/HNTs were prepared by spin coating. • Quantum yield in the nanocomposites was decreased compared with bulk MEH-PPV. • Improvement of the EL of OLEDs was achieved by incorporating high contents of HNTs. • The HNTs act to enhanced polymer aggregates, as revealed by AFM.

  20. Enhanced electroluminescence of organic light-emitting diodes by using halloysite nanotubes

    International Nuclear Information System (INIS)

    Mondragón, Margarita; Moggio, Ivana; León, Arxel de; Arias, Eduardo

    2013-01-01

    The effect of halloysite clay nanotubes (HNTs) on the optical and electronic properties of poly(2-methoxy-5-[2′-ethylhexyloxy]-1,4-phenylenevinylene) (MEH-PPV) have been investigated. The UV–vis absorption band of the conjugated polymer remains unchanged upon the incorporation of halloysite nanotubes (HNTs). Photoluminescence (PL) measurements reveal a decreased quantum yield in the MEH-PPV/HNTs nanocomposites, compared with bulk MEH-PPV. Improvement of the electroluminescence of organic light-emitting diodes (OLEDs) was achieved by incorporating high contents of HNTs. The nanotubes act to enhanced polymer aggregates, as revealed by AFM analysis, thus increasing charge transport and therefore electroluminescence but also decreasing PL quantum yield. -- Highlights: • Thin films of nanocomposites of MEH-PPV/HNTs were prepared by spin coating. • Quantum yield in the nanocomposites was decreased compared with bulk MEH-PPV. • Improvement of the EL of OLEDs was achieved by incorporating high contents of HNTs. • The HNTs act to enhanced polymer aggregates, as revealed by AFM

  1. Photoluminescence and electroluminescence of a tripodal compound containing 7-diethylamino-coumarin moiety

    Energy Technology Data Exchange (ETDEWEB)

    Yu Tianzhi; Zhang Peng; Zhang Hui; Meng Jing; Fan Duowang [Key Laboratory of Opto-Electronic Technology and Intelligent Control (Lanzhou Jiaotong University), Ministry of Education, Lanzhou 730070 (China); Zhao Yuling; Dong Wenkui [School of Chemical and Biological Engineering, Lanzhou Jiaotong University, Lanzhou 730070 (China)], E-mail: ytz823@hotmail.com

    2008-12-07

    A novel tripodal compound, tris[2-(7-diethylamino-coumarin-3-carboxamide)ethyl]amine (Tren-C), was synthesized and characterized by elemental analysis, infrared and {sup 1}H-NMR spectra. The photoluminescent (PL) and electroluminescent properties of Tren-C were investigated. Tren-C exhibits different colour emissions in solid states and solutions. The electroluminescence devices comprising vacuum vapour-deposited films using the compound as a dopant were fabricated, showing blue emissions that are identical to its PL spectrum in chloroform solutions. With the device structure of indium tin oxide (ITO)/4, 4', 4''-tris-N-naphthyl-N-phenylamino-triphenylamine (2-TNATA) (5 nm)/N, N'-bis-(naphthyl)-N, N'-diphenyl-1, 1'-biphenyl-4, 4'-diamine (NPB) (40 nm)/4, 4'-bis(9-carbazolyl) biphenyl (CBP) : Tren-C (0.5 wt%, 30 nm)/2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1, 3, 4-oxadiazole (Bu-PBD) (30 nm)/LiF (1 nm)/Al (100 nm), a maximum external quantum efficiency of 2.85%, a maximum luminous efficiency of 3.85 cd A{sup -1} and a maximum luminance of 1450 cd m{sup -2} are realized.

  2. Large-area and bright pulsed electroluminescence in monolayer semiconductors

    KAUST Repository

    Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Ahn, Geun Ho; Han, Kevin; He, Jr-Hau; Ager, Joel W.; Wu, Ming C.; Javey, Ali

    2018-01-01

    Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

  3. Large-area and bright pulsed electroluminescence in monolayer semiconductors

    KAUST Repository

    Lien, Der-Hsien

    2018-04-04

    Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

  4. Spray deposition of organic electroluminescent coatings for application in flexible light emitting devices

    Directory of Open Access Journals (Sweden)

    Mariya Aleksandrova

    2015-12-01

    Full Text Available Organic electroluminescent (EL films of tris(8-hydroxyquinolinatoaluminum (Alq3 mixed with polystyrene (PS binder were produced by spray deposition. The influence of the substrate temperature on the layer’s morphology and uniformity was investigated. The deposition conditions were optimized and simple flexible light-emitting devices consisting of indium-tin oxide/Alq3:PS/aluminum were fabricated on polyethylene terephthalate (PET foil to demonstrate the advantages of the sprayed organic coatings. Same structure was produced by thermal evaporation of Alq3 film as a reference. The influence of the deposition method on the film roughness and contact resistance at the electrode interfaces for both types of structures was estimated. The results were related to the devices’ efficiency. It was found that the samples with sprayed films turn on at 4 V, which is 2 V lower in comparison to the device with thermal evaporated Alq3. The current through the sprayed device is six times higher as well (17 mA vs. 2.8 mA at 6.5 V, which can be ascribed to the lower contact resistance at the EL film/electrode interfaces. This is due to the lower surface roughness of the pulverized layers.

  5. Progress and Prospects in Stretchable Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Wang Jiangxin

    2017-03-01

    Full Text Available Stretchable electroluminescent (EL devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are

  6. Fabrication and performance of ACTFEL display devices using manganese-doped zinc germanate as a green-emitting electroluminescent layer

    International Nuclear Information System (INIS)

    Kim, Joo Han; Yoon, Kyung Ho

    2010-01-01

    Alternating-current thin-film electroluminescent (ACTFEL) display devices fabricated using manganese-doped zinc germanate (Zn 2 GeO 4 :Mn) as a green-emitting electroluminescent layer material are described. The ACTFEL display devices were fabricated with a standard bottom emission structure having a multilayer stack of thin films in the metal/semiconductor/insulator/ metal (MSIM) configuration. The device was constructed on a transparent Corning glass substrate through which the emitted EL light passed. The Zn 2 GeO 4 :Mn emission layer was synthesized by using a RF magnetron sputter deposition method, followed by post-annealing at 700 .deg. C in air ambient for 1 hour. The obtained Zn 2 GeO 4 :Mn films were found to be polycrystalline with a rhombohedral crystal structure. A green emission spectrum with a maximum at approximately 538 nm was produced from the fabricated device. The chromaticity color coordinates of the EL emission were measured to be x = 0.308 and y = 0.657. The device demonstrated a sharp increase in the intensity of green EL emission upon increasing the AC peak voltage applied to the device above a threshold of 148 V.

  7. On the origin of excimer emission in electroluminescence and photoluminescence spectra of polyfluorenes

    International Nuclear Information System (INIS)

    Vacha, Martin; Ha, Jaekook; Sato, Hisaya

    2007-01-01

    We report a study on the differences in red-shifted excimer band in photoluminescence (PL) and electroluminescence (EL) spectra of thin films of a copolymer of dibutylfluorene and butylphenylphenoxazine. The relative intensity of the excimer band in PL spectra increases with temperature above the polymer glass transition, and with the intensity of the excitation light. In EL spectra, on the other hand, the relative excimer intensity is seen to decrease with increasing driving voltage. These opposite trends originate from the different nature of excitations in PL and EL spectra: photoexcitation directly creates singlet excitons while electric excitation proceeds via interaction of injected electrons and holes. In case of electric excitation, the observed results might be due to trap-assisted excimer formation

  8. Excitation spectra and forward injection electroluminescence of Er/sup 3+/ ions in ZnS

    International Nuclear Information System (INIS)

    Jiaqi, Y.; Tianren, Z.; Wenlian, L.

    1985-01-01

    Trivalent rare earth ions (RE/sup 3+/) are efficient luminescent centers for electroluminescence (EL) of thin films of II-VI compounds, which are promising display materials and attract more and more attention. The mechanism of all EL devices of RE/sup 3+/ available so far is hot electron impact excitation. Based on the analysis of excitation spectra of RE/sup 3+/ in ZnS, the authors have pointed out the possibility of a new type of EL of RE/sup 3+/ - forward injection EL, which have potential of reducing operation voltage and raising efficiency. The forward injection EL of RE/sup 3+/ has been observed and experimentally proven in ZnS:Er/sup 3+/ diode for the first time

  9. Luminance and image quality analysis of an organic electroluminescent panel with a patterned microlens array attachment

    International Nuclear Information System (INIS)

    Lin, Hoang Yan; Chen, Kuan-Yu; Ho, Yu-Hsuan; Fang, Jheng-Hao; Hsu, Sheng-Chih; Lee, Jiun-Haw; Lin, Jia-Rong; Wei, Mao-Kuo

    2010-01-01

    Luminance and image quality observed from the normal direction of a commercial 2.0 inch panel based on organic electroluminescence (OEL) technology attached to regular and patterned microlens array films (MAFs) were studied and analyzed. When applying the regularly arranged MAF on the panel, a luminance enhancement of 23% was observed, accompanied by a reduction of the image quality index as low as 74%. By removing the microlenses on the emitting areas, the patterned MAF enhances the luminance efficiency of the OEL by 52% keeping the image quality index of the display as high as 94%, due to the effective light extraction in the glass substrate being less than the critical angle. 3D simulation based on a ray-tracing model was also established to investigate the spatial distribution of light rays radiated from an OEL pixel with different microstructures which showed consistent results with the experimental results

  10. Automatic Detection of Inactive Solar Cell Cracks in Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2017-01-01

    We propose an algorithm for automatic determination of the electroluminescence (EL) signal threshold level corresponding to inactive solar cell cracks, resulting from their disconnection from the electrical circuit of the cell. The method enables automatic quantification of the cell crack size an...

  11. Supporting Information Blue and White light electroluminescence in ...

    Indian Academy of Sciences (India)

    Administrator

    Blue and White light electroluminescence in a multilayer OLED using a new Aluminium complex. Pabitra K. Nayak a. , Neeraj Agarwal a. , Farman Ali a. , Meghan P. Patankar b. , K. L.. Narasimhan b. *, N. Periasamy a. *. 1. Department of Chemical Sciences,. 2. Department of Condensed Matter Physics and. Materials ...

  12. Automatic Detection of Inactive Solar Cell Cracks in Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2017-01-01

    We propose an algorithm for automatic determination of the electroluminescence (EL) signal threshold level corresponding to inactive solar cell cracks, resulting from their disconnection from the electrical circuit of the cell. The method enables automatic quantification of the cell crack size...

  13. Quantifying Solar Cell Cracks in Photovoltaic Modules by Electroluminescence Imaging

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2015-01-01

    This article proposes a method for quantifying the percentage of partially and totally disconnected solar cell cracks by analyzing electroluminescence images of the photovoltaic module taken under high- and low-current forward bias. The method is based on the analysis of the module’s electrolumin...

  14. Enhancement of Electroluminescence (EL) image measurements for failure quantification methods

    DEFF Research Database (Denmark)

    Parikh, Harsh; Spataru, Sergiu; Sera, Dezso

    2018-01-01

    Enhanced quality images are necessary for EL image analysis and failure quantification. A method is proposed which determines image quality in terms of more accurate failure detection of solar panels through electroluminescence (EL) imaging technique. The goal of the paper is to determine the most...

  15. Functional electronic screen printing – electroluminescent smart fabric watch

    OpenAIRE

    de Vos, Marc; Torah, Russel; Beeby, Steve; Tudor, John

    2013-01-01

    Motivation for screen printed smart fabrics.Introduce functional electronic screen printing on fabrics.Printed smart fabric watch design.Printing process for electroluminescent watch.Demonstration video.Conclusions and further work.Examples of other screen printed smart fabrics.

  16. Electroluminescence from porous silicon due to electron injection from solution

    NARCIS (Netherlands)

    Kooij, Ernst S.; Despo, R.W.; Kelly, J.J.

    1995-01-01

    We report on the electroluminescence from p‐type porous silicon due to minority carrier injection from an electrolyte solution. The MV+• radical cation formed in the reduction of divalent methylviologen is able to inject electrons into the conduction band of crystalline and porous silicon. The

  17. Electroluminescence from completely horizontally oriented dye molecules

    Energy Technology Data Exchange (ETDEWEB)

    Komino, Takeshi [Education Center for Global Leaders in Molecular System for Devices, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Center for Organic Photonics and Electronics Research, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Japan Science and Technology Agency, ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Sagara, Yuta [Center for Organic Photonics and Electronics Research, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Tanaka, Hiroyuki [Center for Organic Photonics and Electronics Research, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Department of Chemistry, Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Oki, Yuji [Japan Science and Technology Agency, ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Department of Electronics, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Nakamura, Nozomi [Center for Organic Photonics and Electronics Research, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Fujimoto, Hiroshi [Center for Organic Photonics and Electronics Research, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Fukuoka i" 3-Center for Organic Photonics and Electronics Research (i3-OPERA), Fukuoka 819-0388 (Japan); and others

    2016-06-13

    A complete horizontal molecular orientation of a linear-shaped thermally activated delayed fluorescent guest emitter 2,6-bis(4-(10Hphenoxazin-10-yl)phenyl)benzo[1,2-d:5,4-d′] bis(oxazole) (cis-BOX2) was obtained in a glassy host matrix by vapor deposition. The orientational order of cis-BOX2 depended on the combination of deposition temperature and the type of host matrix. Complete horizontal orientation was obtained when a thin film with cis-BOX2 doped in a 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) host matrix was fabricated at 200 K. The ultimate orientation of guest molecules originates from not only the kinetic relaxation but also the kinetic stability of the deposited guest molecules on the film surface during film growth. Utilizing the ultimate orientation, a highly efficient organic light-emitting diode with the external quantum efficiency of 33.4 ± 2.0% was realized. The thermal stability of the horizontal orientation of cis-BOX2 was governed by the glass transition temperature (T{sub g}) of the CBP host matrix; the horizontal orientation was stable unless the film was annealed above T{sub g}.

  18. Yellow-green electroluminescence of samarium complexes of 8-hydroxyquinoline

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Sara Karimi; Najafi, Ezzatollah [Department of Chemistry Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Amini, Mostafa M., E-mail: m-pouramini@sbu.ac.ir [Department of Chemistry Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Janghouri, Mohammad; Mohajerani, Ezeddin [Laser Research Institute Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Ng, Seik Weng [Department of Chemistry, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2014-12-15

    Four novel samarium complexes were prepared by reacting samarium(III) nitrate with 8-hydroxyquinoline, 2-methyl-8-hydroxyquinoline, and 1,10-phenanthroline and utilized as emitting materials in the electroluminescence device. All complexes were characterized by elemental analysis, infrared, UV–vis and {sup 1}H NMR spectroscopes and the molecular structure of a representative complex, [Sm{sub 2}(Me-HQ){sub 4}(NO{sub 3}){sub 6}] (1), was determined by single-crystal X-ray diffraction. Utilization of a π-conjugated (phenanthroline) ligand as a second ligand in the structure of the samarium complexes resulted in red shifts in both absorption and fluorescence spectra of complexes and moderately enhanced the photoluminescence intensity and the fluorescence quantum yield. The maximum emission peaks showed that a good correlation exists between the nature of the substituent group on the 8-hydroxyquinoline and the addition of the π-conjugated ligand in the structure of samarium complexes and emission wavelength. Devices with samarium(III) complexes with structure of ITO/PEDOT:PSS (90 nm)/PVK:PBD:Sm(III) complexes (75 nm)/Al (180 nm) were fabricated. In the electroluminescence (EL) spectra of the devices, a strong ligand-centered emission and narrow bands arising from the {sup 4}G{sub 5/2}→{sup 6}H{sub J} transitions (J=7/2, 9/2, and 11/2) of the samarium ion were observed for the complexes. The electroluminescent spectra of the samarium complexes were red-shifted as compared with the PVK:PBD blend. We believe that the electroluminescence performance of OLED devices based on samarium complexes relies on overlaps between the absorption of the samarium compounds and the emission of PVK:PBD. This revealed that it is possible to evaluate the electroluminescence performance of the samarium compounds-doped OLED devices based on the emission of PVK:PBD and the absorption of the dopants. - Highlights: • Four novel photoluminescence samarium complexes have been synthesized.

  19. A New Kind of Blue Hybrid Electroluminescent Device.

    Science.gov (United States)

    Wang, Junling; Li, Zhuan; Liu, Chunmei

    2016-04-01

    Bright blue Electroluminescence come from a ITO/BBOT doped silica (6 x 10(-3) M) made by a sol-gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a single-layered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol-gel method was investigated. A number of concentrations of hybrid devices were prepared and the maxium concentration was 6 x 10(-3) M. Blue electroluminescent (EL) always occurred above a threshold field 8.57 x 10(5) V/cm (30 V) at alternating voltage at 500 HZ. The luminance of the devices increased with the concentration of doped BBOT, but electroluminescence characteristics were different from a single molecule's photoluminescence properties of triple peaks. When analyzing in detail direct-current electroluminescence devices of pure BBOT, a single peak centered at 2.82 eV appeared with the driven voltage increase, which is similar to the hybrid devices. Comparing Gaussian decomposition date between two kinds of devices, the triple peak characteristic of BBOT was consistent. It is inferred that BBOT contributed EL of the hybrid devices mainly and silica may account for a very small part. Meanwhile the thermal stability of matrix silica was measured by Thermal Gravity-Mass Spectroscopy (TG-MS). There is 12 percent weight loss from room temperature to 1000 °C and silica has about 95% transmittance. So the matric silica played an important role in thermal stability and optical stability for BBOT. In addition, this kind of blue electroluminescence device can take advantages of organic materials BBOT and inorganic materials silica. This is a promising way to enrich EL devices, especially enriching inorganic EL color at a low cost.

  20. Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Deng, R.; Yao, B.; Li, Y.F.; Xu, Y.; Li, J.C.; Li, B.H.; Zhang, Z.Z.; Zhang, L.G.; Zhao, H.F.; Shen, D.Z.

    2013-01-01

    The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V and emits UV light upon putting a forward bias. The intensity of the UV emission increases as injection current increases from 0.5 to 3.5 mA, but the wavelength of the UV emission decreases from 404 to 387 nm. It is demonstrated that the UV emission comes from near band-edge radiative recombination of electron and hole in the ZnO layer. The mechanism of the UV electroluminescence is discussed in the present work. - Highlights: ► The n-ZnO/p-NiO heterojunction was prepared by rf magnetron sputtering. ► The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V. ► The heterojunction realizes UV EL emission with wavelength of 387 nm at the injection current of 3.5 mA.

  1. ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra

    International Nuclear Information System (INIS)

    Jha, S.K.; Kutsay, O.; Bello, I.; Lee, S.T.

    2013-01-01

    Light emitting diodes (LEDs) based on arrays of n-type ZnO Nanorods were fabricated on p-GaN films using a hydrothermal method. The LEDs emit mainly in blue and UV range of the light. Their current–Voltage (I–V) characteristics typically show a low leakage current (7.2 μA) and a high rectification ratio (3 5 5). Devices operate at a low turn-on voltage of ∼4.5 V. Photoluminescence (PL) and electroluminescence (EL) measurements suggest low density of ZnO defects; however, in some aspects density of interfacial defects still might be considerable in the studied devices. The PL emission is deconvoluted to three peaks that are located at wavelengths of 361, 381, and 397 nm, while the wide EL spectra are deconvoluted to five peaks appearing at 368, 385, 427, 474, and 515 nm. Near-band-edge (NBE) emission of p-GaN and n-ZnO was observed in both the PL and EL spectra. Deconvoluted EL spectra consist of a very wide green band with the peak at 515 nm and extending up to 650 nm (red), and a rarely reported EL emission at 474 nm. Origin of these emissions is discussed, herein. The electrical characteristics together with EL characteristics indicate potential to develop and study p-GaN/n-ZnO nanorod LEDs for white emitting applications. - Highlights: ► A low turn-on voltage (4–4.5 V) and low threshold (5 V) electroluminescence from ZnO/GaN heterostructure. ► A wide spectrum EL emission (360–700 nm) suitable for white LED application. ► EL spectra consist of a rarely reported emission band with peak at 474 nm. ► Low-temperature and solution based fabrication, which is scalable and of low cost.

  2. Electroluminescence and photosensitivity spectra of organic diode structures based on zinc complexes

    Science.gov (United States)

    Kaplunov, M. G.; Krasnikova, S. S.; Nikitenko, S. L.; Yakushchenko, I. K.

    2017-01-01

    Devices based on zinc complexes with sulphanylaminosubstituted ligands are characterized by dual function - electroluminescence (EL) and photosensitivity. Both EL and photosensitivity are associated with the formation of exciplexes.

  3. Electroluminescence of colloidal ZnSe quantum dots

    International Nuclear Information System (INIS)

    Dey, S.C.; Nath, S.S.

    2011-01-01

    The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

  4. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    Science.gov (United States)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi

    2014-02-01

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed.

  5. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    International Nuclear Information System (INIS)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi

    2014-01-01

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed

  6. Coordination compounds of rare-earth metals with organic ligands for electroluminescent diodes

    International Nuclear Information System (INIS)

    Katkova, M A; Bochkarev, Mikhail N; Vitukhnovsky, Alexey G

    2005-01-01

    Data on lanthanide coordination compounds with organic ligands used in the design of electroluminescent diodes are summarised and systematically represented. The molecular and electronic structures and spectroscopic characteristics of these compounds are considered. A comparative analysis of the properties of organic electroluminescent diodes with different compositions of emitting and conductive layers is presented.

  7. Charge transfer through amino groups-small molecules interface improving the performance of electroluminescent devices

    Science.gov (United States)

    Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Kus, Mahmut; Okur, Salih; Demic, Şerafettin; Demirak, Kadir; Kurt, Mustafa; Icli, Sıddık

    2016-05-01

    A carboxylic group functioned charge transporting was synthesized and self-assembled on an indium tin oxide (ITO) anode. A typical electroluminescent device [modified ITO/TPD (50 nm)/Alq3 (60 nm)/LiF (2 nm)/(120 nm)] was fabricated to investigate the effect of the amino groups-small molecules interface on the characteristics of the device. The increase in the surface work function of ITO is expected to facilitate the hole injection from the ITO anode to the Hole Transport Layer (HTL) in electroluminescence. The modified electroluminescent device could endure a higher current and showed a much higher luminance than the nonmodified one. For the produced electroluminescent devices, the I-V characteristics, optical characterization and quantum yields were performed. The external quantum efficiency of the modified electroluminescent device is improved as the result of the presence of the amino groups-small molecules interface.

  8. The synthesis and study of new electroluminescent materials

    International Nuclear Information System (INIS)

    Pillow, J.

    1998-01-01

    Dendrimers offer many potential advantages over other organic electroluminescent materials that have been developed for use in light emitting diodes. This thesis describes the preparation of new electroluminescent dendrimers that consist of a luminescent core, charge-transporting stilbene dendrons and solubilising t-butyl surface groups. Choosing the core to have a longer conjugation length than the dendrons establishes an energy gradient that ensures that light emission occurs from the dendrimer core. Two convergent syntheses were developed for the preparation of dendrons that had aldehyde, bromide and styryl focal groups. The Heck reaction between styrene focused dendrons and 3,5-dibromoaryls was used to increase the dendron generation. This reaction was then alternated with the Wittig or Stille reactions in an iterative cycle to prepare dendrons of up to the third generation. The luminescent cores were chosen to be 1,4-distyrylbenzene, 1,4-distyrylanthracene and meso-tetraaryl porphyrin to emit blue, green and red light respectively. Dendrimers up to the third generation were prepared containing these cores. Further control over the emission colour was demonstrated by the chelation of metals into the porphyrin core. Computer modelling was used to predict the conformations of the dendrimers, with confirmation provided by GPC and X-ray crystallography. The modelled structures were then used to interpret the photoluminescence and electroluminescence spectra. Electrochemical analyses allowed the comparison of the HOMO and LUMO energy levels with the Fermi levels of the metal electrodes, which was used to explain the behaviour of the dendrimers in single layer light-emitting diodes. (author)

  9. Electroluminescence from single nanowires by tunnel injection: an experimental study

    International Nuclear Information System (INIS)

    Zimmler, Mariano A; Bao Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-01-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure

  10. Transient electroluminescence on pristine and degraded phosphorescent blue OLEDs

    Science.gov (United States)

    Niu, Quan; Blom, Paul W. M.; May, Falk; Heimel, Paul; Zhang, Minlu; Eickhoff, Christian; Heinemeyer, Ute; Lennartz, Christian; Crǎciun, N. Irina

    2017-11-01

    In state-of-the-art blue phosphorescent organic light-emitting diode (PHOLED) device architectures, electrons and holes are injected into the emissive layer, where they are carried by the emitting and hole transporting units, respectively. Using transient electroluminescence measurements, we disentangle the contribution of the electrons and holes on the transport and efficiency of both pristine and degraded PHOLEDs. By varying the concentration of hole transporting units, we show that for pristine PHOLEDs, the transport is electron dominated. Furthermore, degradation of the PHOLEDs upon electrical aging is not related to the hole transport but is governed by a decrease in the electron transport due to the formation of electron traps.

  11. Flexible powder electroluminescent device on silver nanowire electrode

    Energy Technology Data Exchange (ETDEWEB)

    Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T. [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Park, J.H. [AIDEN company, Cheongju-si 361-911 (Korea, Republic of); Lee, S.H. [R& D Business Lab, Hyosung Corporation, Anyang 431-080 (Korea, Republic of); Kim, J.S., E-mail: jsukim@pknu.ac.kr [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2015-09-15

    We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device.

  12. Electroluminescent drift chamber with 16 μm spatial resolution

    International Nuclear Information System (INIS)

    Baskakov, V.I.; Dolgoshein, V.A.; Lebedenko, V.N.

    1978-01-01

    Studied are the characteristics of the dft electroluminscent chamber of an original design. For insuring high spatial resolution, the chamber has been filled with xenon to a pressure of 20 atm, which substantially decreases the electron diffusion during drift. Located at the end of the drift gap is an anode wire, 50 μm in dia. A strong electric field available near the thin wire causes electroluminescence of the electrons. The signal is localized within a small volume and contribution of the luminescence time in the total duration of a signal is small. In this case no electron multiplication occurs at all and, consequently, no space charge of positive ions takes place, which makes it possible to operate at very high loadings (2x10 6 particle/s). The characteristics of the chamber are measured in a beam of the Serpukhov accelerator. Use has been made of a model comprising two chambers, 5 mm thick, located successively along the beam with the effective area being 40x40 mm. The studies and analysis performed reveal that the drift electroluminescent chamber operates reliably in the wide range of the working gas pressure at an intensity of the incident particles up to 10 5 particle/s. The best resolution is obtained at a pressure of 20 atm and it equals 16 μm

  13. Flexible powder electroluminescent device on silver nanowire electrode

    International Nuclear Information System (INIS)

    Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T.; Park, J.H.; Lee, S.H.; Kim, J.S.

    2015-01-01

    We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device

  14. Carbon-electroluminescence: An organic approach to lighting

    Science.gov (United States)

    Kumari, Sonali; Chaudhary, Tarun; Chandran, Vivek; Lokeshwari, M.; Shastry, K.

    2018-05-01

    Over the recent years, quantum dots have garnered massive following and peaked in interest among the scientific community due to their versatility, exotic properties, ease of preparation and low cost. As the demand for faster, reliable and energy efficient electronic devices intensifies, extra emphasis is laid on the development of smart materials capable of satiating this need. Electroluminescent organic quantum dots have emerged as one of the prime contenders in addressing the ecological, economic and technological constraints. Application of such luminescent nanoparticles as fluorescent light converters in LEDs is touted as one of the reliable and easiest avenues in realizing and developing newer energy efficient technologies for the next millennia. One promising candidate is zig-zag graphene quantum dots, which exhibits high electro-luminescence due to a phenomenon known as quantum confinement (where size of the nano-particle is of the same order or less than that of Bohr exciton radius). In this paper, we aim to provide a review of past and present research in the synthesis and development of luminescence using organic quantum dots.

  15. Electroluminescence efficiencies of erbium in silicon-based hosts

    Energy Technology Data Exchange (ETDEWEB)

    Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

    2013-11-04

    We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

  16. Hybrid electroluminescent device based on MEH-PPV and ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hewidy, Dina; Gadallah, A.-S.; Fattah, G. Abdel

    2017-02-15

    Hybrid organic/inorganic electroluminescent device based on the structure of glass/ITO/PEDOT:PSS/MEH-PPV/ZnO/ZnO submicrorods/Al has been manufactured. Spin coating has been used to deposit both PEDOT:PSS and MEH-PPV. Two-step process has been used to synthesis ZnO submicrorods, namely, spin coating and chemical bath deposition. Changing the dimensions of the ZnO submicrorods in this layer structure has been investigated to improve the performance of the organic/inorganic electroluminescence device. Such layer structure provides electroluminescence with narrow emission bands due to a high gain with this structure. X-ray diffraction patterns and scanning electron microscope images show that ZnO submicrorods have hexagon structure. Current-voltage curve for the structure has been reported. Electroluminescence curves (electroluminescence intensity versus wavelength) at different bias voltages have been presented and these results show narrowing in full width at half maximum in the spectra at high current density compared to photoluminescence excitation. The narrowing in the spectrum has been explained. - Highlights: • Manufacturing of MEH-PPV and ZnO electroluminescent device has been reported. • Spin coating and chemical bath deposition have been used for preparation of ZnO. • SEM images and X-ray diffraction of ZnO have been presented. • Current-voltage curves and electroluminescent measurements have been reported.

  17. Electroluminescence and electrical degradation of insulating polymers at electrode interfaces under divergent fields

    Science.gov (United States)

    Zhang, Shuai; Li, Qi; Hu, Jun; Zhang, Bo; He, Jinliang

    2018-04-01

    Electrical degradation of insulating polymers at electrode interfaces is an essential factor in determining long-term reliability. A critical challenge is that the exact mechanism of degradation is not fully understood, either experimentally or theoretically, due to the inherent complex processes. Consequently, in this study, we investigate electroluminescence (EL) at the interface of an electrode and insulator, and determine the relationship between EL and electrical degradation. Using a tip-plate electrode structure, the unique features of EL under a highly divergent field are investigated. The voltage type (alternating or direct current), the polymer matrix, and the time of pressing are also investigated separately. A study of EL from insulators under a divergent field is provided, and the relationship between EL spectra and degradation is discussed. It is shown that EL spectra under a divergent field have unique characteristics compared with EL spectra from polymer films under a uniform field and the most obvious one is the UV emission. The results obtained in the current investigation bring us a step closer to understanding the process of electrical degradation and provide a potential way to diagnose insulator defects.

  18. Electroluminescence and Photoluminescence from a Fluorescent Cobalt Porphyrin Grafted on Graphene Oxide

    Science.gov (United States)

    Janghouri, Mohammad

    2017-10-01

    A new graphene oxide-cobalt porphyrin (GO-CoTPP) hybrid material has been used as an emissive layer in organic light-emitting diodes (OLEDs). Devices with fundamental structure of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS, 45 nm)/polyvinylcarbazole (PVK):2-(4-biphenyl)-5-(4- t-butylphenyl)-1,3,4-oxadiazole (PBD):GO-CoTPP (70 nm)/1,3,5-tris( N-phenylbenzimidazol-2-yl)-benzene (TPBI, 20 nm)/Al (150 nm) were fabricated. A red electroluminescence (EL) was obtained from thin-film PVK:PBD:CoTPP at 70 nm thickness. When CoTPP was covalently grafted on graphene oxide (GO) sheets, near-white EL was obtained. The white emission, which was composed of bluish green and red, is attributed to electroplex formation at the GO-CoTPP/PBD interface. Such electroplex emission between electrons and holes is a reason for the low turn-on voltage of the GO-CoTPP-based OLED. Maximum luminance efficiency of 1.43 cd/A with Commission International de l'Eclairage coordinates of 0.33 and 0.40 was achieved at current of 0.02 mA and voltage of 14 V.

  19. Investigations on electroluminescent tapes and foils in relation to their applications in automotive

    Science.gov (United States)

    Plotog, Ioan

    2015-02-01

    The electroluminescent (EL) tapes or foils having barrier films for an additional level of protection against the toughest environments conditions, offer a large area of applications. The EL lights, due to their characteristics, began to be used not only in the entertainment industry, but also for automotive and aerospace applications. In the paper, the investigations regarding EL foils technical performances in relation to their applications as light sources in automotive ambient light were presented. The experiments were designed based on the results of EL foils electrical properties previous investigations done in laboratory conditions, taking into account the range of automotive ambient temperatures for sinusoidal alternative supply voltage. The measurements for different temperatures were done by keeping the EL foils into electronic controlled oven that ensures the dark enclosure offering conditions to use a lux-meter in order to measure and maintain under control light emission intensity. The experiments results define the EL foils characteristics as load in automotive ambient temperatures condition, assuring so the data for optimal design of a dedicated inverter.

  20. Synthesis, structures and electroluminescence properties of CdS:In/Si nanoheterostructure array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling; Cai, Hong Xin; Chen, Liang [Henan Polytechnic University, School of Physics and Electronic Information Engineering, Jiaozuo (China)

    2017-10-15

    An In-doped CdS/Si nanoheterojunction (CdS:In/Si-NPA) is prepared by depositing an In-doped CdS thin film onto a Si nanoporous pillar array (Si-NPA) via a successive ionic layer adsorption and reaction method. Based on the measured J-V characteristic curve, the nanoheterojunction exhibits a good rectifying behavior with a low forward turn-on voltage (2.2 V), a small leakage current density (0.5 mA/cm{sup 2} at - 3 V) and a high reverse breakdown voltage (> 8 V). The electroluminescence (EL) measurements reveal that a broadband emerges between 400 and 700 nm, and this band is confirmed as a white light emission based on the value of the chromaticity coordinate. The EL properties, including the CIE chromaticity coordinates, Colour Rendering Index and correlated color temperature, can be tuned by the applied voltage. The generation mechanism of the EL can be well interpreted depending on the energy band structure of CdS:In/Si-NPA. The green band should be attributed to the band-edge emission of CdS and the yellow emission may be related to Cd interstitial. These results highlight the potential of CdS:In/Si-NPA as a light source for future white light emitting devices. (orig.)

  1. Electroluminescence of organic light-emitting diodes with an ultra-thin layer of dopant

    Energy Technology Data Exchange (ETDEWEB)

    Li Weizhi [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu Junsheng [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn; Wang, Tao [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Jiang, Yadong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jiangyd@uestc.edu.cn; Wei, Bangxiong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2008-03-15

    Conventional fluorescent dyes, i.e., 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), 5,12-dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA) and 5,6,11,12-tetraphenylnaphthacene (Rubrene), were used to investigate the performance of organic light-emitting diodes (OLEDs) based on indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/tris-(8-hydroxyquinolate)-aluminum (Alq{sub 3})/MgAg. The dyes were either inserted into devices as an ultra-thin film at the NPB/Alq{sub 3} interface by sequential evaporation, or doped into the Alq{sub 3} emission layer by co-evaporation with the doping ratio about 2%. Electroluminescence (EL) spectra of devices indicated that concentration quenching effect (CQE) of the dye-dopant was slightly bigger in the former than in the latter, while the degrees of CQE for three dopants are in the order of DMQA > DCJTB > Rubrene suggested by the difference in EL spectra and performances of devices. In addition, EL process of device with an ultra-thin layer of dopant is dominated by direct carrier trapping (DCT) process due to almost no holes recombine with electrons in Alq{sub 3}-host layer.

  2. Comparison of electroluminescence intensity and photocurrent of polymer based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hoyer, Ulrich; Swonke, Thomas; Auer, Richard [Bayerisches Zentrum fuer Angewandte Energieforschung e.V., Erlangen (Germany); Pinna, Luigi; Brabec, Christoph J. [Bayerisches Zentrum fuer Angewandte Energieforschung e.V., Erlangen (Germany); I-MEET, University Erlangen (Germany); Stubhan, Tobias; Li, Ning [I-MEET, University Erlangen (Germany)

    2011-11-15

    The reciprocity theorem for solar cell predicts a linear relation between electroluminescence emission and photovoltaic quantum efficiency and an exponential dependence of the electroluminescence signal on the applied voltage. Both dependencies are experimentally verified for polymer based solar cells in this paper. Furthermore it is shown, that electroluminescence imaging of organic solar cells has the potential to visualize the photocurrent distribution significantly faster than standard laser beam induced current mapping (LBIC) techniques. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Synthesis and photophysical characteristics of 2,7-fluorenevinylene-based trimers and their electroluminescence.

    Science.gov (United States)

    Mikroyannidis, John A; Fenenko, Larysa; Adachi, Chihaya

    2006-10-19

    Three new 2,7-fluorenevinylene-based trimers were synthesized and characterized. The synthesis was carried out by the Heck coupling reaction of 9,9-dihexyl-2,7-divinylfluorene with 2-(4-bromophenyl)-5-phenyl-1,3,4-oxadiazole, N,N-diphenyl-4-bromoaniline, or 3-bromopyrene to afford the trimers OXD, TPA, and PYR, respectively. All the trimers were readily soluble in common organic solvents such as tetrahydrofuran, dichloromethane, chloroform, and toluene. Their glass transition temperatures ranged from 33 to 60 degrees C. The UV-vis spectra showed an absorption maximum at lambda(a,max) = 379-417 nm with optical band gap of Eg = 2.47-2.66 eV. In solution, they emitted strong blue-green photoluminescence (PL) with PL maximum at lambda(f,max) = 455-565 nm and fluorescence quantum yield of Phi(f) = 0.65-0.74. On the other hand, in their spin-coated films, the PL efficiencies significantly decreased due to the presence of concentration quenching. All samples showed nanosecond transient lifetime containing two components, suggesting excimer formation. The organic light-emitting diodes (OLEDs) with OXD and TPA showed green emission with electroluminescence (EL) quantum efficiencies of eta(EL) approximately 10(-2)%, while very weak EL efficiency of eta(EL) approximately 10(-5)% was observed with PYR. The highest occupied molecular orbital (HOMO) levels of the films were found to be 5.05-5.75 eV.

  4. Electroluminescence light emitting diodes - an environmental friendly approach

    International Nuclear Information System (INIS)

    Shaukat, S.F.; Farooq, R.

    2005-01-01

    The simple porous silicon-based devices producing stable electroluminescence (EL) by the deposition of a poly-4-dicyanomethylene-4H-cyclopenta dithiophene monolayer (PCDM) into the nanostructure was reported. The structure of these devices is Au/PCDM/porous silicon/Si/Al. The EL emission is bright, visible by the naked eye under normal daylight and broad in wavelength covering the whole visible range with a peak at 60 nm. The emission area of the devices is 1 cm/sup 2/. The El starting voltage is in the range of 14-30 V and the current is around 300 mA. The time stability was good for all the devices tested. After exposure to the air for more than three months, the devices show nearly the same emission intensity without increase of external power supplied. (author)

  5. Kinetics of transient electroluminescence in organic light emitting diodes

    Science.gov (United States)

    Shukla, Manju; Kumar, Pankaj; Chand, Suresh; Brahme, Nameeta; Kher, R. S.; Khokhar, M. S. K.

    2008-08-01

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - tdel), where tdel is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - tdec), where tdec is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated.

  6. Electroluminescence and photosensitivity spectra of organic diode structures based on zinc complexes

    International Nuclear Information System (INIS)

    Kaplunov, M.G.; Krasnikova, S.S.; Nikitenko, S.L.; Yakushchenko, I.K.

    2017-01-01

    Devices based on zinc complexes with sulphanylaminosubstituted ligands are characterized by dual function – electroluminescence (EL) and photosensitivity. Both EL and photosensitivity are associated with the formation of exciplexes.

  7. Electroluminescence and phototrigger effect in single crystals of GaSxSe1-x alloys

    International Nuclear Information System (INIS)

    Kyazym-Zade, A. G.; Salmanov, V. M.; Mokhtari, A. G.; Dadashova, V. V.; Agaeva, A. A.

    2008-01-01

    The effects of switching and electroluminescence as well as the interrelation between these effects in single crystals of GaS x Se 1-x alloys are detected and studied. It is established that the threshold voltage for switching depends on temperature, resistivity, and composition of alloys, and also on the intensity and spectrum of photoactive light. As a result, a phototrigger effect is observed; this effect arises under irradiation with light from the fundamental-absorption region. Electroluminescence is observed in the subthreshold region of the current-voltage characteristic; the electroluminescence intensity decreases drastically to zero as the sample is switched from a high-resistivity state to a low-resistivity state. Experimental data indicating that the electroluminescence and the switching effect are based on the injection mechanism (as it takes place in other layered crystals of the III-V type) are reported

  8. Phosphorescent rhenium emitters based on two electron-withdrawing diamine ligands: Structure, characterization and electroluminescent performance

    Energy Technology Data Exchange (ETDEWEB)

    Rui, Mei, E-mail: meirui2015@163.com [College of Science, Hebei North University, Zhangjiakou 075000, Hebei (China); Yuhong, Wang [College of Science, Hebei North University, Zhangjiakou 075000, Hebei (China); Yinting, Wang; Na, Zhang [Communication Training Base of The Headquarters of The General Staff, Zhangjiakou 075100, Hebei (China)

    2014-09-15

    In this paper, two diamine ligands having electron-withdrawing oxadiazole group and their corresponding Re(I) complexes were synthesized. Their geometric structure, electronic transition, photophysical property, thermal stability and electrochemical property were discussed in detail. Experimental data suggested that both complexes were promising yellow emitters with suited energy levels and good thermal stability for electroluminescent application. The correlation between emission performance and electron-withdrawing group was analyzed. It was found that electron-withdrawing group favored emission performance improvement. Their electroluminescence performance was also explored. Yellow electroluminescence was observed with maximum brightness of 1743 cd/m{sup 2}. - Highlights: • Oxadiazole derived diamine ligands and their Re(I) complexes were synthesized. • Their characters and properties were analyzed and compared in detail. • Electron-withdrawing group was proved to be positive for PL improvement. • Electroluminescence was obtained with maximum brightness of 1743 cd/m{sup 2}.

  9. Structural, morphological and electroluminescence studies of Zno:Co nanophosphor

    Science.gov (United States)

    Singh, Anju; Vishwakarma, H. L.

    2016-09-01

    The nanoparticles of zinc oxide (ZnO) doped with various concentrations of cobalt (Co) were synthesized by chemical precipitation method in the presence of capping agent polyvinylpyrrolidone (PVP). The effect of doping concentration on structural and morphological properties has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Cell volume, bond length, texture coefficient, lattice constants and dislocation density are also studied. Here, we also compared the interplaner spacing and relative peak intensities from their standard values with different angles. Crystallite sizes have been calculated by Debye-Scherrer's formula whose values are decreasing with increase in cobalt content up to 3 %. It has been seen that the growth orientation of the prepared ZnO nanorods was (101). The XRD analysis also ensures that ZnO has a hexagonal (wurtzite) crystal structure. The electroluminescence (EL) cells were prepared by placing pure and cobalt-doped ZnO nanoparticles between ITO-coated conducting glass plate and aluminium foil. Alternating voltage of various frequencies was applied, and EL brightness at different voltages was measured and corresponding current was also recorded. The voltage dependence of electroluminescence (EL) brightness of the ZnO:Co shows exponential increase. The linear voltage-current characteristic indicates ohmic nature. The EL brightness at a particular voltage is found to increase by increasing Co doping, but for higher percentage of Co the EL brightness is reduced. It is also seen that Co does not influence the threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  10. The nature of trapping sites and recombination centres in PVK and PVK-PBD electroluminescent matrices seen by spectrally resolved thermoluminescence

    International Nuclear Information System (INIS)

    Glowacki, Ireneusz; Szamel, Zbigniew

    2010-01-01

    Two electroluminescent polymer matrices poly(N-vinylcarbazole) (PVK) and PVK with 40 wt% of 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) were studied using spectrally resolved thermoluminescence (SRTL) in the temperature range 15-325 K. The comparison of the SRTL results with the electroluminescence (EL) spectra has allowed identification of the localized (trapping) sites and the radiative recombination centres present in the investigated matrices. In the neat PVK films deep traps with a depth about 200 meV, related to triplet excimers dominate, while in the PVK-PBD (40 wt%) blend films the traps that are related to triplet exciplexes formed by the carbazole groups and the PBD molecules dominate. Depth of the traps in the PVK-PBD blend is somewhat lower than that in the neat PVK. An analysis of the EL spectra shows that in the PVK and in the PVK-PBD blend the dominant radiative centres are singlet excimers and singlet exciplexes, respectively. However, in the neat PVK some contributions of the triplet monomer and the triplet excimer states in the EL were also detected.

  11. Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation

    International Nuclear Information System (INIS)

    Vlasenko, N. A.; Oleksenko, P. F.; Mukhlyo, M. A.; Veligura, L. I.

    2013-01-01

    The causes of changes that occur in a thin-film electroluminescent metal-insulator-semiconductor-insulator-metal waveguide structure based on ZnS:Cr (Cr concentration of ∼4 × 10 20 cm −3 ) upon lasing (λ ≈ 2.6 μm) and that induce lasing cessation are studied. It is established that lasing ceases because of light-scattering inhomogeneities formed in the structure and, hence, optical losses enhance. The origin of the inhomogeneities and the causes of their formation are clarified by studying the surface topology and the crystal structure of constituent layers of the samples before and after lasing. The studies are performed by means of atomic force microscopy and X-ray radiography. It is shown that a substantial increase in the sizes of grains on the surface of the structure is the manifestation of changes induced in the ZnS:Cr film by recrystallization. Recrystallization is initiated by local heating by absorbed laser radiation in existing Cr clusters and quickened by a strong electric field (>1 MV cm −1 ). The changes observed in the ZnS:Cr film are as follows: the textured growth of ZnS crystallites, an increase in the content of Cr clusters, and the appearance of some CrS and a rather high ZnO content. Some ways for improving the stability of lasing in the ZnS:Cr-based waveguide structures are proposed

  12. Pattern Visual Evoked Potentials Elicited by Organic Electroluminescence Screen

    Directory of Open Access Journals (Sweden)

    Celso Soiti Matsumoto

    2014-01-01

    Full Text Available Purpose. To determine whether organic electroluminescence (OLED screens can be used as visual stimulators to elicit pattern-reversal visual evoked potentials (p-VEPs. Method. Checkerboard patterns were generated on a conventional cathode-ray tube (S710, Compaq Computer Co., USA screen and on an OLED (17 inches, 320 × 230 mm, PVM-1741, Sony, Tokyo, Japan screen. The time course of the luminance changes of each monitor was measured with a photodiode. The p-VEPs elicited by these two screens were recorded from 15 eyes of 9 healthy volunteers (22.0 ± 0.8 years. Results. The OLED screen had a constant time delay from the onset of the trigger signal to the start of the luminescence change. The delay during the reversal phase from black to white for the pattern was 1.0 msec on the cathode-ray tube (CRT screen and 0.5 msec on the OLED screen. No significant differences in the amplitudes of P100 and the implicit times of N75 and P100 were observed in the p-VEPs elicited by the CRT and the OLED screens. Conclusion. The OLED screen can be used as a visual stimulator to elicit p-VEPs; however the time delay and the specific properties in the luminance change must be taken into account.

  13. Kinetics of transient electroluminescence in organic light emitting diodes

    International Nuclear Information System (INIS)

    Shukla, Manju; Brahme, Nameeta; Kumar, Pankaj; Chand, Suresh; Kher, R S; Khokhar, M S K

    2008-01-01

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - t del ), where t del is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - t dec ), where t dec is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated

  14. Investigating side chain mediated electroluminescence from carbazole-modified polyfluorene.

    Science.gov (United States)

    Liao, Jin-Long; Chen, Xiwen; Liu, Ching-Yang; Chen, Show-An; Su, Chiu-Huen; Su, An-Chung

    2007-09-06

    In molecular design of electroluminescent (EL) conjugated polymers, introducing a charge transport moiety on a side chain is found to be a promising method for balancing electron and hole fluxes in EL devices without changing the emitting color if there is no interaction between moiety and main chain. In the case of grafting a carbazole (Cz) moiety (hole transporting) on blue emitting polyfluorene, a green emission appears with intensity comparable to the blue emission, which was attributed to a possible interaction between main chain and Cz as previously reported by us. Here, a detailed study of its EL mechanism was carried out by means of time-resolved EL with the assistance of molecular simulation and thermally stimulated current measurements; exploration of how main chain segments interact with the transport moiety was performed. We found the Cz groups in Cz100PF play multiple roles: they act as (1) hole transporter to improve hole injection, (2) hole trapping site for efficient electron-hole recombination to yield blue-emitting excitons, and (3) source of green emission from electroplex formed via electric field-mediated interaction of the Cz/Cz radical cation with an electron in the nearby PF backbone. In combination, these observations suggest that integrated consideration for both intramolecular and intermolecular interactions provides a new route of molecular design of efficient EL polymers.

  15. Pattern visual evoked potentials elicited by organic electroluminescence screen.

    Science.gov (United States)

    Matsumoto, Celso Soiti; Shinoda, Kei; Matsumoto, Harue; Funada, Hideaki; Sasaki, Kakeru; Minoda, Haruka; Iwata, Takeshi; Mizota, Atsushi

    2014-01-01

    To determine whether organic electroluminescence (OLED) screens can be used as visual stimulators to elicit pattern-reversal visual evoked potentials (p-VEPs). Checkerboard patterns were generated on a conventional cathode-ray tube (S710, Compaq Computer Co., USA) screen and on an OLED (17 inches, 320 × 230 mm, PVM-1741, Sony, Tokyo, Japan) screen. The time course of the luminance changes of each monitor was measured with a photodiode. The p-VEPs elicited by these two screens were recorded from 15 eyes of 9 healthy volunteers (22.0 ± 0.8 years). The OLED screen had a constant time delay from the onset of the trigger signal to the start of the luminescence change. The delay during the reversal phase from black to white for the pattern was 1.0 msec on the cathode-ray tube (CRT) screen and 0.5 msec on the OLED screen. No significant differences in the amplitudes of P100 and the implicit times of N75 and P100 were observed in the p-VEPs elicited by the CRT and the OLED screens. The OLED screen can be used as a visual stimulator to elicit p-VEPs; however the time delay and the specific properties in the luminance change must be taken into account.

  16. Observation of near infrared and enhanced visible emissions from electroluminescent devices with organo samarium(III) complex

    Energy Technology Data Exchange (ETDEWEB)

    Chu, B [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Li, W L [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Hong, Z R [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Zang, F X [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Wei, H Z [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Wang, D Y [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Li, M T [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Lee, C S [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Lee, S T [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China)

    2006-11-07

    Samarium (dibenzoylmethanato){sub 3} bathophenanthroline (Sm(DBM){sub 3} bath) was employed as an emitting and electron transport layer in organic light emitting diodes (OLEDs), and narrow electroluminescent (EL) emissions of a Sm{sup 3+} ion were observed in the visible and near infrared (NIR) region, differing from those of the same devices with Eu{sup 3+}- or Tb{sup 3+}-complex EL devices with the same structure. The EL emissions of the Sm{sup 3+}-devices originate from transitions from {sup 4}G{sub 5/2} to the lower respective levels of Sm{sup 3+} ions. A maximum luminance of 490 cd m{sup -2} at 15 V and an EL efficiency of 0.6% at 0.17 mA cm{sup -2} were obtained in the visible region, and the improved efficiency should be attributed to introducing a transitional layer between the N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) film and the Sm(DBM){sub 3} bath film and the avoidance of interfacial exciplex emission in devices. Sharp emissions of Sm{sup 3+} ions in the NIR region were also observed under a lower threshold value less than 4.5 V.

  17. Electroluminescence of organic light-emitting diodes consisting of an undoped (pbi)2Ir(acac) phosphorescent layer

    Science.gov (United States)

    Lei, Xia; Yu, Junsheng; Zhao, Juan; Jiang, Yadong

    2011-11-01

    The electroluminescence (EL) characteristics of phosphorescent organic light-emitting diodes (OLEDs) with an undoped bis(1,2-dipheny1-1H-benzoimidazole) iridium (acetylacetonate) [(pbi)2Ir(acac)] emissive layer (EML) of various film thicknesses were studied. The results showed that the intensity of green light emission decreased rapidly with the increasing thickness of (pbi)2Ir(acac), which was relevant to the triplet excimer emission. It suggested that the concentration quenching of monomer emission in the undoped (pbi)2Ir(acac) film was mainly due to the formation of triplet excimer and partly due to the triplet-triplet annihilation (TTA) and triplet-polaron annihilation (TPA). A green OLED with a maximum luminance of 26,531 cd/m2, a current efficiency of 36.2 cd/A, and a power efficiency of 32.4 lm/W was obtained, when the triplet excimer emission was eliminated. Moreover, the white OLED with low efficiency roll-off was realized due to the broadened recombination zone and reduced quenching effects in the EML when no electron blocking layer was employed.

  18. Spectroscopic investigation of the interfaces in new poly(9,9-dihexyl–9H-fluorene-2,7- diyl based electroluminescent devices

    Directory of Open Access Journals (Sweden)

    C. Donitsi

    2014-01-01

    Full Text Available The highest occupied and lowest unoccupied states of the new electroluminescent material poly(9,9-dihexyl–9H- fluorene-2,7-diyl (PPV-D and polyvinylcarbazole (PVK are investigated using ultraviolet photoelectron and inverse photoemission spectroscopies. Hole injection barriers are determined for interfaces between indium-tin oxide covered substrates with work function ranging from 4.4 to 4.7 eV and these two polymers. Vacuum level alignment with flat bands away from the interface is found when the interface hole barrier is 0.6 eV or larger. Band bending away from the Fermi level occurs when the hole barrier is smaller than 0.6 eV. This is due to the accumulation charges at the interface with the polymer when the injection barrier is small. The resulting field bends the polymer levels to limit charge incoming in the bulk of the film. The efficiency of the electroluminescent structures is strongly influenced by the different energy levels alignment at the layer interfaces.

  19. Tunneling electron induced molecular electroluminescence from individual porphyrin J-aggregates

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Qiushi; Zhang, Chao; Zhang, Yang, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn; Zhang, Yao; Liao, Yuan; Dong, Zhenchao, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2015-07-27

    We investigate molecular electroluminescence from individual tubular porphyrin J-aggregates on Au(111) by tunneling electron excitations in an ultrahigh-vacuum scanning tunneling microscope (STM). High-resolution STM images suggest a spiral tubular structure for the porphyrin J-aggregate with highly ordered “brickwork”-like arrangements. Such aggregated nanotube is found to behave like a self-decoupled molecular architecture and shows red-shifted electroluminescence characteristics of J-aggregates originated from the delocalized excitons. The positions of the emission peaks are found to shift slightly depending on the excitation sites, which, together with the changes in the observed spectral profiles with vibronic progressions, suggest a limited exciton coherence number within several molecules. The J-aggregate electroluminescence is also found unipolar, occurring only at negative sample voltages, which is presumably related to the junction asymmetry in the context of molecular excitations via the carrier injection mechanism.

  20. Novel Mechano-Luminescent Sensors Based on Piezoelectric/Electroluminescent Composites

    Directory of Open Access Journals (Sweden)

    Yunzhang Fang

    2011-04-01

    Full Text Available A high-sensitivity mechano-luminescent sensor was fabricated on the basis of piezoelectric/electroluminescent composites. The working principle of this mechano-luminescent sensor was elucidated by analyzing the relationship between the piezoelectric-induced charges and the electroluminescent effects. When a stress is applied on the piezoelectric layer, electrical charges will be induced at both the top and bottom sides of the piezoelectric layer. The induced electrical charges will lead to a light output from the electroluminescent layer, thus producing a mechano-luminescence effect. By increasing the vibration strength or frequency applied, the mechano-luminescence output can be obviously enhanced. Mechano-luminescence sensors have potential in smart stress-to-light devices, such as foot-stress-distribution-diagnosis systems and dynamic-load-monitors for bridge hanging cables.

  1. Electroluminescence of erbium in Al/α-Si:H(Er)/p-c-Si/Al structure

    International Nuclear Information System (INIS)

    Kon'kov, I.O.; Kuznetsov, A.N.; Pak, P.E.; Terukov, E.I.; Granitsyna, L.S.

    2001-01-01

    It is informed for the first time on the observation of the erbium intensive electroluminescence from the amorphous hydrated silicon layer by application of the Al/α-Si:H(Er)/p-c-Si/Al structure in the direct shift mode. The above structure is the n-p-heterostructure with the barrier values of 0.3-0.4 eV for the electrons and 0.9-1.1 eV for the holes. The electroluminescence efficiency is evaluated at the level ∼ 2 x 10 -5 . The electroluminescence effect in the Al/α-Si:H(Er)/p-c-Si/Al structure is connected with the hole tunneling from the crystal silicon by the amorphous silicon localized states with the subsequent release into the valent zone [ru

  2. Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

    Science.gov (United States)

    Dong, Yajie

    2017-02-01

    Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

  3. Dye linked conjugated homopolymers: using conjugated polymer electroluminescence to optically pump porphyrin-dye emission

    DEFF Research Database (Denmark)

    Nielsen, K.T.; Spanggaard, H.; Krebs, Frederik C

    2004-01-01

    . Electroluminescent devices of the homopolymer itself and of the zinc-porphyrin containing polymer were prepared and the nature of the electroluminescence was characterized. The homopolymer segments were found to optically pump the emission of the zinc-porphyrin dye moities. The homopolymer exhibits blue......Zinc-porphyrin dye molecules were incorporated into the backbone of a conjugated polymer material by a method, which allowed for the incorporation of only one zinc-porphyrin dye molecule into the backbone of each conjugated polymer molecule. The electronic properties of the homopolymer were...

  4. Photo- and electroluminescence of undoped and rare earth doped ZnO electroluminors

    International Nuclear Information System (INIS)

    Bhushan, S.; Pandey, A.N.; Kaza, B.R.

    1977-01-01

    A series of undoped and rare earth (Dy, Yb, Nd, Pr, Gd, La, Sm and Er) doped ZnO electroluminors have been prepared and their photo- (PL) and electroluminescence (EL) spectra at different concentrations of rare earth ions have been investigated. PL and EL spectra of undoped electroluminescence consist of three peaks. Due to the addition of the rare earth ions these peaks are shifted either to the longer or to the shorter wavelength side. The intensities are also either decreased or increased. Experimental results favour the donor-accepted model for this system. (Auth.)

  5. Effect of γ-quanta on electroluminescent emitters with zinc sulfide luminophores

    International Nuclear Information System (INIS)

    Vershchagin, I.K.; Kokin, S.M.; Pautkina, A.V.

    1993-01-01

    The electroluminescent light sources used in data processing systems can operate under various conditions, particularly in the presence of a significant background radiation. In this work, the authors have investigated the effect of γ-irradiation on the main properties of electroluminescent emitters (ELE) prepared from polycrystalline luminophores of various grades. Such emitters are plane structures consisting of transparent and opaque electrodes and a layer of the luminophore distributed in the dielectric. The ELE were excited with a sinusoidal voltage (220 V; 0.4-1 kHz) at room temperature

  6. An IBM-Compatible 640 X 200 Electroluminescent (EL) Display Monitor

    Science.gov (United States)

    Gullick, Paul; Schmachtenberg, Richard; Laakso, Carl

    1986-05-01

    An electroluminescent flat-panel display has been developed and recently introduced that fills any of the needs of the portable computer market. The display is very thin, yet rugged enough for the rigors of portability. It is highly integrated, and very reliable. It has the crisp and clear display image that is typical of high quality electroluminescent displays. The unit has a pixel matrix organization and pixel dimensions that are not only asthetically and ergonomically pleasing, but also make the display compatible with the most widely used software packages run on today's personal computers (Figure 1).

  7. Preparation and characterization of electroluminescent devices based on complexes of {beta}-diketonates of Tb{sup 3+}, Eu{sup 3+}, Gd{sup 3+} ions with macrocyclic ligands and UO{sub 2}{sup 2+} films; Preparacao e caracterizacao de dispositivos eletroluminescentes de complexos de {beta}-dicetonados de ions Tb{sup 3+}, Eu{sup 3+}, Gd{sup 3+} com ligantes macrociclicos e filmes de UO{sub 2}{sup 2+}

    Energy Technology Data Exchange (ETDEWEB)

    Gibelli, Edison Bessa

    2010-07-01

    Complexes containing Rare Earth ions are of great interest in the manufacture of electro luminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR{sup 3+}) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth {beta}-diketonate complexes (Tb{sup 3+}, Eu{sup 3+} and Gd{sup 3+}) and (tta - thenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO{sub 2}{sup 2+}. The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition). (author)

  8. Surface energy for electroluminescent polymers and indium-tin-oxide

    International Nuclear Information System (INIS)

    Zhong Zhiyou; Yin Sheng; Liu Chen; Zhong Youxin; Zhang Wuxing; Shi Dufang; Wang Chang'an

    2003-01-01

    The contact angles on the thin films of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and indium-tin-oxide (ITO) were measured by the sessile-drop technique. The surface energies of the films were calculated using the Owens-Wendt (OW) and van Oss-Chaudhury-Good (vOCG) approaches. The overall total surface energies of MEH-PPV and the as-received ITO were 30.75 and 30.07 mJ/m 2 , respectively. Both approaches yielded almost the same surface energies. The surface energies were mainly contributed from the dispersion interactions or Lifshitz-van der Waals (LW) interactions for both MEH-PPV and ITO. The changes in the contact angles and surface energies of the ITO films, due to different solvent cleaning processes and oxygen plasma treatments, were analyzed. Experimental results revealed that the total surface energy of the ITO films increased after various cleaning processes. In comparison with different solvents used in this study, we found that methanol is an effective solvent for ITO cleaning, as a higher surface energy was observed. ITO films treated with oxygen plasma showed the highest surface energy. This work demonstrated that contact angle measurement is a useful method to diagnose the cleaning effect on ITO films

  9. Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq3

    Science.gov (United States)

    Yuan, Chao; Guan, Min; Zhang, Yang; Li, Yiyang; Liu, Shuangjie; Zeng, Yiping

    2017-08-01

    In this work, the organic light-emitting diodes (OLEDs) based on Alq3 are fabricated. In order to make clear the transport mechanism of carriers in organic light-emitting devices at low temperature, detailed electroluminescence transient response and the current-voltage-luminescence (I-V-L) characteristics under different temperatures in those OLEDs are investigated. It founds that the acceleration of brightness increases with increasing temperature is maximum when the temperature is 200 K and it is mainly affected by the electron transport layer (Alq3). The MoO3 injection layer and the electroluminescent layer have great influence on the delay time when the temperature is 200 K. Once the temperature is greater than 250 K, the delay time is mainly affected by the MoO3 injection layer. On the contrary, the fall time is mainly affected by the electroluminescent material. The Vf is the average growth rate of fall time when the temperature increases 1 K which represents the accumulation rate of carriers. The difference between Vf caused by the MoO3 injection layer is 0.52 us/K and caused by the electroluminescent material Ir(ppy)3 is 0.73 us/K.

  10. Photovoltaic and Electroluminescence Characters in Hybrid ZnO and Conjugated Polymer Bulk Heterojunction Devices

    Institute of Scientific and Technical Information of China (English)

    LIU Jun-Peng; QU Sheng-Chun; XU Ying; CHEN Yong-Hai; ZENG Xiang-Bo; WANG Zhi-Jie; ZHOU Hui-Ying; WANG Zhan-Guo

    2007-01-01

    We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) bulk heterojunction photovoltaic cells. Photoluminescence quenching experimental results indicate that the ultrafast photoinduced electron transfer occurs from MDMO-PPV to ZnO under illumination. The ultrafast photoinduced electron transfer effect is induced because ZnO has an electron affinity about 1.2 eV greater than that of MDMO-PPV. Electron 'back transfer' can occur if the interfacial barrier between ZnO and MDMO-PPV can be overcome by applying a substantial electric field. Therefore, electroluminescence action due to the fact that the back transfer effect can be observed in the ZnO: MDMO-PPV devices since a forward bias is applied. The photovoltaic and electroluminescence actions in the same ZnO: MDMO-PPV device can be induced by different injection ways: photoinjection and electrical injection. The devices are expected to provide an opportunity for dual functionality devices with photovoltaic effect and electroluminescence character.

  11. Aftereffect of UV excitation on the ZnS electroluminescent emission

    International Nuclear Information System (INIS)

    Maxia, V.; Muntoni, C.; Murgia, M.

    1980-01-01

    The initial a.c. electroluminescent (EL) emission of ZnS(Cu) previously excited with UV light has been studied. The experiments showed that the EL build-up is made more swift by the preceding UV excitation. This result is ascribed to space charge produced by UV excitation which affects the exchange of electrons between lattice and EL defects. (author)

  12. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  13. Unusual near-white electroluminescence of light emitting diodes based on saddle-shaped porphyrins.

    Science.gov (United States)

    Shahroosvand, Hashem; Zakavi, Saeed; Sousaraei, Ahmad; Mohajerani, Ezeddin; Mahmoudi, Malek

    2015-05-14

    In contrast to the red electroluminescence emission frequently observed in porphyrins based OLED devices, the present devices exhibit a nearly white emission with greenish yellow, yellowish green and blue green hues in the case of Fe(II)(TCPPBr6) (TCPPBr6 = β-hexabromo-meso-tetrakis-(4-phenyl carboxyl) porphyrinato), Zn(II)(TPPBr6) and Co(II)(TPPBr6), respectively.

  14. White electroluminescence from ZnO nanorods/p-GaN heterojunction light-emitting diodes under reverse bias

    International Nuclear Information System (INIS)

    Zhang, Lichun; Li, Qingshan; Qu, Chong; Zhang, Zhongjun; Huang, Ruizhi; Zhao, Fengzhou

    2013-01-01

    Heterojunction light-emitting diodes (LEDs) based on arrays of ZnO nanorods were fabricated on p-GaN films by the hydrothermal method. Without any phosphors, white-light electroluminescence (EL) from ZnO nanorods/p-GaN heterojunction LEDs operated at reverse breakdown bias was observed. The EL spectra are composed of an ultraviolet (UV) emission centered at 382 nm, a blue light located at 431 nm and a broadband yellow–green light at around 547 nm, which originated from band-edge emission in ZnO, the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinates of EL spectrum are very close to the (0.333, 0.333) of standard white light. The origin of these emissions has been discussed and the tunneling effect in the interface is probably the mechanism to explain EL emission. (paper)

  15. The effect of the thicknesses of the various layers on the colour emitted by an organic electroluminescent device

    Science.gov (United States)

    Jolinat, P.; Clergereaux, R.; Farenc, J.; Destruel, P.

    1998-05-01

    Organic electroluminescent diodes based on thin organic layers are one of the most promising next-generation systems for the backlighting of the liquid crystal screens. Among other methods to obtain white light, three-layer luminescent devices with each layer emitting one of the three fundamental colours have been studied here. Red, green and blue light were produced by 0022-3727/31/10/018/img1 doped with Nile red, 0022-3727/31/10/018/img1 and TPD layers respectively. A fourth thin film of TAZ has been inserted between TPD and 0022-3727/31/10/018/img1 to control injection of electrons into the TPD. The effect of the layers' thicknesses on the spectral emission of the device has been examined. Results show that the thicknesses of TAZ and doped 0022-3727/31/10/018/img1 layers have to be controlled to within a precision of better than 5 Å. The discussion turns on the possibility of applying this technology to screen backlighting.

  16. Single-crystal structure, photophysical characteristics and electroluminescent properties of bis(2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate)zinc

    Energy Technology Data Exchange (ETDEWEB)

    Xu Huixia, E-mail: xuhuixia0824@163.com [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Yue, Yan [Department of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Wang Hua [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Chen Liuqing [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Hao Yuying [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Xu Bingshe [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2012-04-15

    In this paper, a zinc (II) complex of Zn{sub 2}(4-tfmBTZ){sub 4} (4-tfmBTZ=2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate) was reported. Via combination of experimental and theoretical approaches, its molecular structure, photophysical characteristics, electronic structure and electroluminescent properties were investigated. The results indicate that Zn{sub 2}(4-tfmBTZ){sub 4} exists as five-coordinate geometric structure and two zinc atoms are bridged by oxygen atoms. The intense absorption band was located at 404 nm, which mainly originate from the transition HOMO-1 to LUMO+2. The blue-light emission was observed in tetrahydrofuran solution and thin film. White-light emission with four emission peaks was observed with CIE coordinate of (0.29, 0.33) and a higher CRI of 85.1 by fabricating bilayer device using Zn{sub 2}(4-tfmBTZ){sub 4} as electron-transport and NPB as hole-transport material. - Highlights: Black-Right-Pointing-Pointer The single-crystal and electronic structures of Zn{sub 2}(4-tfmBTZ){sub 4}. Black-Right-Pointing-Pointer The multicolor emission of Zn{sub 2}(4-tfmBTZ){sub 4} were realized by the simple devices. Black-Right-Pointing-Pointer White OLED is achieved with particularly high color rending index (CRI) by the emission of Zn{sub 2}(4-tfmBTZ){sub 4}.

  17. Study of the electroluminescence of highly stereoregular poly(N-pentenyl-carbazole) for blue and white OLEDs

    Science.gov (United States)

    Liguori, R.; Botta, A.; Pragliola, S.; Rubino, A.; Venditto, V.; Velardo, A.; Aprano, S.; Maglione, M. G.; Prontera, C. T.; De Girolamo Del Mauro, A.; Fasolino, T.; Minarini, C.

    2017-06-01

    The electroluminescence (EL) of isotactic and syndiotactic poly(N-pentenyl-carbazole) (PPK), achieved by coordination polymerization, is studied in order to investigate the interrelation between the polymer tacticity and their physical-chemical properties. The use of these polymers in organic light-emitting diode (OLED) fabrication is also explored. Thermal and x-ray diffraction analyses of PPKs show that the isotactic stereoisomer is semicrystalline, whereas the syndiotactic one is amorphous. Optical analysis of both stereoisomers, carried out on film samples, reveals the presence of two different excimers: ‘sandwich-like’ and ‘partially overlapping’. Nevertheless, the emission intensity ratio between ‘sandwich-like’ and ‘partially overlapping’ excimers is higher in the isotactic than in the syndiotactic stereoisomer. Using the synthesized polymers as OLED emitting layers, the influence of the polymer tacticity on the EL properties of the device is highlighted. In detail, while blue OLEDs are obtained by using the syndiotactic stereoisomer, OLEDs with a multilayer structure fabricated with the isotactic stereoisomer emit white light. The contribution of three different emissions (fluorescence, phosphorescence and electromer emissions) with comparable intensities to the detected white light is discussed.

  18. Single-crystal structure, photophysical characteristics and electroluminescent properties of bis(2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate)zinc

    International Nuclear Information System (INIS)

    Xu Huixia; Yue, Yan; Wang Hua; Chen Liuqing; Hao Yuying; Xu Bingshe

    2012-01-01

    In this paper, a zinc (II) complex of Zn 2 (4-tfmBTZ) 4 (4-tfmBTZ=2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate) was reported. Via combination of experimental and theoretical approaches, its molecular structure, photophysical characteristics, electronic structure and electroluminescent properties were investigated. The results indicate that Zn 2 (4-tfmBTZ) 4 exists as five-coordinate geometric structure and two zinc atoms are bridged by oxygen atoms. The intense absorption band was located at 404 nm, which mainly originate from the transition HOMO−1 to LUMO+2. The blue-light emission was observed in tetrahydrofuran solution and thin film. White-light emission with four emission peaks was observed with CIE coordinate of (0.29, 0.33) and a higher CRI of 85.1 by fabricating bilayer device using Zn 2 (4-tfmBTZ) 4 as electron-transport and NPB as hole-transport material. - Highlights: ► The single-crystal and electronic structures of Zn 2 (4-tfmBTZ) 4 . ► The multicolor emission of Zn 2 (4-tfmBTZ) 4 were realized by the simple devices. ► White OLED is achieved with particularly high color rending index (CRI) by the emission of Zn 2 (4-tfmBTZ) 4 .

  19. Photo/electroluminescence properties of an europium (III) complex doped in 4,4'-N,N'-dicarbazole-biphenyl matrix

    International Nuclear Information System (INIS)

    Zhou Yonghui; Zhou Liang; Wu, Jing; Li, Hong-Yan; Zheng Youxuan; You Xiaozeng; Zhang Hongjie

    2010-01-01

    The photoluminescence properties of one europium complex Eu(TFNB) 3 Phen (TFNB = 4,4,4-trifluoro-1-(naphthyl)-1,3-butanedione, Phen = 1,10-phenanthroline) doped in a hole-transporting material CBP (4,4'-N,N'-dicarbazole-biphenyl) films were studied. A series of organic light-emitting devices (OLEDs) using Eu(TFNB) 3 Phen as the emitter were fabricated with a multilayer structure of indium tin oxide, 250 Ω/square)/TPD (N,N'-diphenyl-N,N'-bis(3-methyllphenyl)-(1,1'-biphenyl)-4,4'-diamine, 50 nm)/Eu(TFNB) 3 phen (x): CBP (4,4'-N,N'-dicarbazole-biphenyl, 45 nm)/BCP (2,9-dimethyl-4,7-diphenyl-l,10 phenanthroline, 20 nm)/AlQ (tris(8-hydroxy-quinoline) aluminium, 30 nm)/LiF (1 nm)/Al (100 nm), where x is the weight percentage of Eu(TFNB) 3 phen doped in the CBP matrix (1-6%). A red emission at 612 nm with a half bandwidth of 3 nm, characteristic of Eu(III) ion, was observed with all devices. The device with a 3% dopant concentration shows the maximum luminance up to 1169 cd/m 2 (18 V) and the device with a 5% dopant concentration exhibits a current efficiency of 4.46 cd/A and power efficiency of 2.03 lm/W. The mechanism of the electroluminescence was also discussed.

  20. Observation of red electroluminescence from an Eu2O3/ p +-Si device and improved performance by introducing a Tb2O3 layer

    International Nuclear Information System (INIS)

    Yin, Xue; Wang, Shenwei; Mu, Guangyao; Wan, Guangmiao; Huang, Miaoling; Yi, Lixin

    2017-01-01

    We report red electroluminescence (EL) from an Eu 2 O 3 / p + -Si device with Eu 2 O 3 film annealed in oxygen ambient at 700 °C. The red EL is ascribed to the characteristic emissions of Eu 3+ ions in Eu 2 O 3 film and the luminescence mechanism is discussed in detail. In order to optimize the device performance, Eu 2 O 3 /Tb 2 O 3 multiple films were deposited on Si wafer, and the result showed EL intensity of the device was obviously enhanced and the turn-on voltage was reduced to about 10 V. Moreover, intensity ratio I ( 5 D 0 – 7 F 2 )/ I ( 5 D 0 – 7 F 1 ) was also significantly increased with the hypersensitive transition 5 D 0 – 7 F 2 as the most prominent group at about 611 nm. The improved performance was attributed to the added Tb 2 O 3 film that it can be served as the hole-injection layer to afford extra holes injected into the Eu 2 O 3 layer. (paper)

  1. Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse

    Science.gov (United States)

    Ohi, Shintaro; Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-02-01

    We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electroluminescence confined near the drain contact. In contrast, devices with reduced current collapse resulting from oxygen plasma treatment or GaN capping showed low-intensity reddish emission across the entire gate-drain access region. A qualitative explanation of this observed correlation between the current collapse and electroluminescence is presented. Our results demonstrate that electroluminescence analysis is a powerful tool not only for identifying high-field regions but also for assessing the degree of current collapse in AlGaN/GaN HEMTs.

  2. Fiscal 1999 achievement report on regional consortium research and development project. Regional consortium activity in its 3rd year (Research and development of technologies for creating novel organic electroluminescent devices); 1999 nendo shin'yuki electroluminescence device no sosei gijutsu ni kansuru kenkyu kaihatsu seika hokokusho. 3

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Development is reported of an autoluminescent planar display and a free shape novel light source based on the technology of creating organic electroluminescent (EL) devices. A small dose of desiccant is added to an inorganic amorphous protecting film, and then high reliability is attained with the film staying in service for 30,000 hours or more. Technologies of ensuring uniform luminescence on a 100 times 100mm large screen and forming a 0.2mm pitch electrode pattern are established, and a 320 times 240 dot simple matrix display is developed. Novel red luminescent materials are developed, which are luminescent materials which incorporate Eu ions as luminescent seeds and exhibit a sharp luminescent spectrum, and novel organic materials. Novel blue luminescent materials are also developed. As for white luminescent materials, two types of novel pigments are developed. Studies are under way to apply amphoteric carrier transport materials to EL devices. A novel sealing technology is established which uses a composite material made of fine glass powder and UV setting resin. A SiON-based protecting film is successfully fabricated by which the internal stress is minimized. A technology is established of fabricating a diamond-like carbon (DLC) film for the protection of electrodes and wiring circuits. (NEDO)

  3. Fiscal 1999 achievement report on regional consortium research and development project. Regional consortium activity in its 3rd year (Research and development of technologies for creating novel organic electroluminescent devices); 1999 nendo shin'yuki electroluminescence device no sosei gijutsu ni kansuru kenkyu kaihatsu seika hokokusho. 3

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Development is reported of an autoluminescent planar display and a free shape novel light source based on the technology of creating organic electroluminescent (EL) devices. A small dose of desiccant is added to an inorganic amorphous protecting film, and then high reliability is attained with the film staying in service for 30,000 hours or more. Technologies of ensuring uniform luminescence on a 100 times 100mm large screen and forming a 0.2mm pitch electrode pattern are established, and a 320 times 240 dot simple matrix display is developed. Novel red luminescent materials are developed, which are luminescent materials which incorporate Eu ions as luminescent seeds and exhibit a sharp luminescent spectrum, and novel organic materials. Novel blue luminescent materials are also developed. As for white luminescent materials, two types of novel pigments are developed. Studies are under way to apply amphoteric carrier transport materials to EL devices. A novel sealing technology is established which uses a composite material made of fine glass powder and UV setting resin. A SiON-based protecting film is successfully fabricated by which the internal stress is minimized. A technology is established of fabricating a diamond-like carbon (DLC) film for the protection of electrodes and wiring circuits. (NEDO)

  4. Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

    Energy Technology Data Exchange (ETDEWEB)

    Geng, R.; Mayhew, N. T.; Nguyen, T. D., E-mail: ngtho@uga.edu [Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 (United States)

    2013-12-09

    We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model.

  5. Enhancing light emission in flexible AC electroluminescent devices by tetrapod-like zinc oxide whiskers.

    Science.gov (United States)

    Wen, Li; Liu, Nishuang; Wang, Siliang; Zhang, Hui; Zhao, Wanqiu; Yang, Zhichun; Wang, Yumei; Su, Jun; Li, Luying; Long, Fei; Zou, Zhengguang; Gao, Yihua

    2016-10-03

    Flexible alternating current electroluminescent devices (ACEL) are more and more popular and widely used in liquid-crystal display back-lighting, large-scale architectural and decorative lighting due to their uniform light emission, low power consumption and high resolution. However, presently how to acquire high brightness under a certain voltage are confronted with challenges. Here, we demonstrate an electroluminescence (EL) enhancing strategy that tetrapod-like ZnO whiskers (T-ZnOw) are added into the bottom electrode of carbon nanotubes (CNTs) instead of phosphor layer in flexible ACEL devices emitting blue, green and orange lights, and the brightness is greatly enhanced due to the coupling between the T-ZnOw and ZnS phosphor dispersed in the flexible polydimethylsiloxane (PDMS) layer. This strategy provides a new routine for the development of high performance, flexible and large-area ACEL devices.

  6. Electroluminescence Caused by the Transport of Interacting Electrons through Parallel Quantum Dots in a Photon Cavity

    Science.gov (United States)

    Gudmundsson, Vidar; Abdulla, Nzar Rauf; Sitek, Anna; Goan, Hsi-Sheng; Tang, Chi-Shung; Manolescu, Andrei

    2018-02-01

    We show that a Rabi-splitting of the states of strongly interacting electrons in parallel quantum dots embedded in a short quantum wire placed in a photon cavity can be produced by either the para- or the dia-magnetic electron-photon interactions when the geometry of the system is properly accounted for and the photon field is tuned close to a resonance with the electron system. We use these two resonances to explore the electroluminescence caused by the transport of electrons through the one- and two-electron ground states of the system and their corresponding conventional and vacuum electroluminescense as the central system is opened up by coupling it to external leads acting as electron reservoirs. Our analysis indicates that high-order electron-photon processes are necessary to adequately construct the cavity-photon dressed electron states needed to describe both types of electroluminescence.

  7. Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

    International Nuclear Information System (INIS)

    Geng, R.; Mayhew, N. T.; Nguyen, T. D.

    2013-01-01

    We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model

  8. Electroluminescence and rectifying properties of heterojunction LEDs based on ZnO nanorods

    International Nuclear Information System (INIS)

    Rout, Chandra Sekhar; Rao, C N R

    2008-01-01

    n-ZnO NR/p-Si and n-ZnO NR/p-PEDOT/PSS heterojunction light-emitting diodes (LEDs) have been fabricated with ZnO nanorods (NRs) grown by a low-temperature method as well as by employing pulsed laser deposition (PLD). The low-temperature method involves growing the ZnO nanorods by the reaction of water with zinc metal. The current-voltage (I-V) characteristics of the heterojunctions show good rectifying diode characteristics. The electroluminescence (EL) spectra of the nanorods show an emission band at around 390 nm and defect related bands in the 400-550 nm region. Room-temperature electroluminescence is detected under forward bias for both the heterostructures. With the low-temperature grown nanorods, the defect related bands in the 400-550 nm range are more intense in the EL spectra, whereas with the PLD grown nanorods, only the 390 nm band is prominent

  9. Exciton-dominant Electroluminescence from a Diode of Monolayer MoS2

    Science.gov (United States)

    2014-05-14

    injected electrons and holes, is a reliable technique to study exciton recombination processes in monolayer MoS2, including val- ley and spin excitation...temperature. After superimposing a white light scattering image of the de - vice, we find that the electroluminescence is localized at the edge of the...We find the emerged feature (labeled NX) peaks at 550 nm with energy of 2.255 eV. In low dimensional system, like monolayer MoS2, Coulomb interactions

  10. Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Forneris, J., E-mail: jacopo.forneris@unito.it [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Battiato, A.; Gatto Monticone, D. [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Picollo, F. [Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Amato, G.; Boarino, L.; Brida, G.; Degiovanni, I.P.; Enrico, E.; Genovese, M.; Moreva, E.; Traina, P. [Istituto Nazionale di Ricerca Metrologica (INRiM), Torino (Italy); Verona, C.; Verona Rinati, G. [Department of Industrial Engineering, University of Roma “Tor Vergata”, Roma (Italy); Olivero, P. [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy)

    2015-04-01

    Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of color centers in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the color centers. With this purpose, buried graphitic electrodes with a spacing of 10 μm were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He{sup +} micro-beam. The current flowing in the gap region between the electrodes upon the application of a 450 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of color centers localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centers (NV{sup 0}, λ{sub ZPL} = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400–500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected (λ{sub ZPL} = 536.3 nm, λ{sub ZPL} = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centers. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

  11. Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, Oleg; Bresler, Mikhail; Kuznetsov, Alexey; Kudoyarova, Vera; Pak, Petr; Terukov, Evgenii; Tsendin, Konstantin; Yassievich, Irina [A F Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Weiser, Gerhard [Phillips-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

    1998-05-11

    We have observed room-temperature erbium-ion electroluminescence in erbium-doped amorphous silicon. Electrical conduction through the structure is controlled by thermally activated ionization of deep D{sup -} defects in an electric field and the reverse process of capture of mobile electrons by D{sup 0} states. Defect-related Auger excitation (DRAE) is responsible for excitation of erbium ions located close to dangling-bond defects. Our experimental data are consistent with the mechanisms proposed

  12. The surface defect-related electroluminescence from the ZnO microwire

    Energy Technology Data Exchange (ETDEWEB)

    Ding Meng; Zhao Dongxu; Yao Bin; Li Binghui; Zhang Zhenzhong; Shan Chongxin; Shen Dezhen, E-mail: dxzhao2000@yahoo.com.cn [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China)

    2011-02-23

    Surface defect-related electroluminescence (EL) was realized from a single ZnO microwire-based metal-semiconductor-metal structure on a glass substrate. ZnO microwires were successfully fabricated using a simple chemical vapour deposition approach. Schottky contacts were detected between Au electrodes and the ZnO microwire. The EL spectrum showed a broad emission band covering the visible range from 400 to 700 nm. The possible EL emission mechanism is discussed in detail in this paper.

  13. Two-phase xenon detector with gas amplification and electroluminescent signal detection

    International Nuclear Information System (INIS)

    Akimov, D.Yu.; Burenkov, A.A.; Grishkin, Yu.L.; Kovalenko, A.G.; Lebedenko, V.N.; Stekhanov, V.N.

    2008-01-01

    An optical technique for detecting ionization electrons produced during ionization of the liquid phase has been experimentally tested in two-phase (liquid-gas) xenon. The effects of gas and electroluminescent amplifications at the wire anode are simultaneously used for detection. This method allows construction of a supersensitive detector of small ionization signals-down to those corresponding to the detection of single electrons [ru

  14. Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Chao [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); College of Materials Science and Optoelectronic Devices, University of Chinese Academy of Sciences, Beijing 100049 (China); Guan, Min, E-mail: guanmin@semi.ac.cn [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Yang [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); College of Materials Science and Optoelectronic Devices, University of Chinese Academy of Sciences, Beijing 100049 (China); Li, Yiyang; Liu, Shuangjie [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zeng, Yiping [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); College of Materials Science and Optoelectronic Devices, University of Chinese Academy of Sciences, Beijing 100049 (China)

    2017-08-15

    Highlights: • The dependency relation between transmission rate and electron transport layer is revealed. • The critical temperature points for the influence of luminescent materials and injection barriers on delay time are found. • The influence of light-emitting material and injection layer on carrier accumulation is quantified. - Abstract: In this work, the organic light-emitting diodes (OLEDs) based on Alq{sub 3} are fabricated. In order to make clear the transport mechanism of carriers in organic light-emitting devices at low temperature, detailed electroluminescence transient response and the current-voltage–luminescence (I–V–L) characteristics under different temperatures in those OLEDs are investigated. It founds that the acceleration of brightness increases with increasing temperature is maximum when the temperature is 200 K and it is mainly affected by the electron transport layer (Alq{sub 3}). The MoO{sub 3} injection layer and the electroluminescent layer have great influence on the delay time when the temperature is 200 K. Once the temperature is greater than 250 K, the delay time is mainly affected by the MoO{sub 3} injection layer. On the contrary, the fall time is mainly affected by the electroluminescent material. The V{sub f} is the average growth rate of fall time when the temperature increases 1 K which represents the accumulation rate of carriers. The difference between V{sub f} caused by the MoO{sub 3} injection layer is 0.52 us/K and caused by the electroluminescent material Ir(ppy){sub 3} is 0.73 us/K.

  15. Molding resonant energy transfer by colloidal crystal: Dexter transfer and electroluminescence

    Science.gov (United States)

    González-Urbina, Luis; Kolaric, Branko; Libaers, Wim; Clays, Koen

    2010-05-01

    Building photonic crystals by combination of colloidal ordering and metal sputtering we were able to construct a system sensitive to an electrical field. In corresponding crystals we embedded the Dexter pair (Ir(ppy3) and BAlq) and investigated the influence of the band gap on the resonant energy transfer when the system is excited by light and by an electric field respectively. Our investigations extend applications of photonic crystals into the field of electroluminescence and LED technologies.

  16. Electroluminescence of Multicomponent Conjugated Polymers. 1. Roles of Polymer/Polymer Interfaces in Emission Enhancement and Voltage-Tunable Multicolor Emission in Semiconducting Polymer/Polymer Heterojunctions

    National Research Council Canada - National Science Library

    Zhang, Xuejun, Ph.D

    1999-01-01

    Effects of the electronic structure of polymer/polymer interfaces on the electroluminescence efficiency and tunable multicolor emission of polymer heterojunction light-emitting diodes were explored...

  17. 2-(2-Hydroxyphenyl)imidazole-based four-coordinate organoboron compounds with efficient deep blue photoluminescence and electroluminescence.

    Science.gov (United States)

    Zhang, Zhenyu; Zhang, Zuolun; Zhang, Hongyu; Wang, Yue

    2017-12-19

    Two new four-coordinate organoboron compounds with 2-(2-hydroxyphenyl)imidazole derivatives as the chelating ligands have been synthesized. They possess high thermal stability and are able to form an amorphous glass state. Crystallographic analyses indicate that the differences in ligand structure cause the change of ππ stacking character. The CH 2 Cl 2 solutions and thin films of these compounds display bright blue emission, and these compounds have appropriate HOMO and LUMO energy levels for carrier injection in OLEDs. By utilizing the good thermal and luminescent properties, as well as the proper frontier orbital energy levels, bright non-doped OLEDs with a simple structure have been realized. Notably, these simple devices show deep blue electroluminescence with the Commission Internationale de l'Éclairage (CIE) coordinate of ca. (0.16, 0.08), which is close to the CIE coordinate of (0.14, 0.08) for standard blue defined by the National Television System Committee. In addition, one of the devices exhibits good performance, showing brightness, current efficiency, power efficiency and external quantum efficiency up to 2692 cd m -2 , 2.50 cd A -1 , 1.81 lm W -1 and 3.63%, respectively. This study not only provides good deep-blue emitting OLED materials that are rarely achieved by using four-coordinate organoboron compounds, but also allows a deeper understanding of the structure-property relationship of 2-(2-hydroxyphenyl)imidazole-based boron complexes, which benefits the further structural design of this type of material.

  18. White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

    Science.gov (United States)

    Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

    2016-03-09

    In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

  19. Electroluminescence Properties of IrQ(ppy)2 Dual-Emitter Organometallic Compound in Organic Light-Emitting Devices

    Science.gov (United States)

    Ciobotaru, Constantin Claudiu; Polosan, Silviu; Ciobotaru, Iulia Corina

    2018-02-01

    This paper reports the influence of the charge carrier mobility on the electroluminescent properties of a dual-emitter organometallic compound dispersed in two conjugated organic small-molecule host materials and embedded in organic light-emitting devices (OLEDs). The electroluminescent processes in OLEDs are strongly influenced by the host-guest interaction. The charge carrier mobility in the host material plays an important role in the electroluminescent processes but also depends on the triplet-triplet interaction with the organometallic compound. The low charge carrier mobility in 4,4'-bis( N-carbazolyl)-1,1'-biphenyl (CBP) host material reduces the electroluminescent processes, but they are slightly enhanced by the triplet-triplet exothermic charge transfer. The higher charge carrier mobility in the case of N, N'-bis(3-methylphenyl)- N, N'-diphenylbenzidine (TPD) host material influences the electroluminescent processes by the endothermic energy transfer at room temperature, which facilitates the triplet-triplet harvesting in the host-guest system. The excitation is transferred to the guest molecules by triplet-triplet interaction as a Dexter transfer, which occurs by endothermic transfer from the triplet exciton in the host to the triplet exciton in the guest.

  20. FABRICATION OF ZNS THIN FILM FOR INORGANIC EL BY THE VACCUUM EVAPORATION

    OpenAIRE

    龍見, 雅美; 島谷, 圭市; 小西, 信行; 元木, 健作

    2008-01-01

    "Zinc sulfide is a typical material for inorganic electroluminescent(EL) device. Recently very high luminance and life time e has been reported on an inorganic EL device based on thin film zinc sulfide material. The present study tries to realize high quality zinc sulfide thin film for EL device. The thin film was grown by the vacuum evaporation method. In order to obtain stoichiometric thin film, the vacuum evaporation was carried out in a quasi-closed vessel under a condition of sulfur atmo...

  1. Study of narrow and intense UV electroluminescence from ITO/SRO/Si-p and ITO/SRN/SRO/Si-p based light emitting capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Cabañas-Tay, S.A., E-mail: scabanastay@hotmail.com [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600, Apodaca, Nuevo León (Mexico); Palacios-Huerta, L.; Aceves-Mijares, M. [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico); Coyopol, A. [CIDS-BUAP, Apdo. 1651, Puebla Pue 72000 (Mexico); Morales-Morales, F.; Pérez-García, S.A.; Licea-Jiménez, L. [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600, Apodaca, Nuevo León (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Bellaterra, 08103, Barcelona (Spain); Monfil-Leyva, K. [CIDS-BUAP, Apdo. 1651, Puebla Pue 72000 (Mexico); Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600, Apodaca, Nuevo León (Mexico)

    2017-03-15

    In this work, multiple narrow and highly intense ultraviolet (UV) electroluminescent (EL) bands were observed in light emitting capacitors (LECs) using silicon rich oxide (SRO) films as active layer. Besides, the effect of a thin silicon rich nitride (SRN) film on top of the SRO (as SRN/SRO bilayer) layer was also studied. LECs were fabricated using simple metal–insulator–semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. SRO and SRN films contain 41.85±1.1 and 46.96±1.1 at% of silicon, respectively. Both structures exhibited a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense UV EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm were clearly observed once the LCS was reached. These bands could be related to a combination of emissions through defects inside SRO (252, 288.2 and 415 nm), and characteristic radiation of neutral tin (252.39 and 286.33 nm), neutral indium (271.02, 303.93 and 325.85 nm), single (444.82 nm) and doubly ionized indium (403.07 nm). Furthermore, red EL was observed at the HCS and it was similar to the PL spectra indicating the same radiative process involved. The charge transport is improved when the SRN/SRO bilayer is used as active layer in the LEC. An EL band at ~590 nm is observed when the SRN/SRO bilayer is formed at both conduction states. This band has been observed before and attributed to transitions from the minimum conduction band to K° centers in SRN films. The conduction mechanism responsible of the EL at both conduction states was also studied.

  2. Study of narrow and intense UV electroluminescence from ITO/SRO/Si-p and ITO/SRN/SRO/Si-p based light emitting capacitors

    International Nuclear Information System (INIS)

    Cabañas-Tay, S.A.; Palacios-Huerta, L.; Aceves-Mijares, M.; Coyopol, A.; Morales-Morales, F.; Pérez-García, S.A.; Licea-Jiménez, L.; Domínguez-Horna, C.; Monfil-Leyva, K.; Morales-Sánchez, A.

    2017-01-01

    In this work, multiple narrow and highly intense ultraviolet (UV) electroluminescent (EL) bands were observed in light emitting capacitors (LECs) using silicon rich oxide (SRO) films as active layer. Besides, the effect of a thin silicon rich nitride (SRN) film on top of the SRO (as SRN/SRO bilayer) layer was also studied. LECs were fabricated using simple metal–insulator–semiconductor (MIS) structures with indium tin oxide (ITO) and aluminum as gate and substrate electrodes, respectively. SRO and SRN films contain 41.85±1.1 and 46.96±1.1 at% of silicon, respectively. Both structures exhibited a resistance switching (RS) behavior from a high conduction state (HCS) to a low conduction state (LCS), enhancing an intense UV EL. This RS behavior produces structural changes in the active layer and probably in the ITO contact. Seven narrow bands with half-peak width of 7±0.6 nm at ~250, 270, 285, 305, 325, 415 and 450 nm were clearly observed once the LCS was reached. These bands could be related to a combination of emissions through defects inside SRO (252, 288.2 and 415 nm), and characteristic radiation of neutral tin (252.39 and 286.33 nm), neutral indium (271.02, 303.93 and 325.85 nm), single (444.82 nm) and doubly ionized indium (403.07 nm). Furthermore, red EL was observed at the HCS and it was similar to the PL spectra indicating the same radiative process involved. The charge transport is improved when the SRN/SRO bilayer is used as active layer in the LEC. An EL band at ~590 nm is observed when the SRN/SRO bilayer is formed at both conduction states. This band has been observed before and attributed to transitions from the minimum conduction band to K° centers in SRN films. The conduction mechanism responsible of the EL at both conduction states was also studied.

  3. Systematic investigation of the effects of organic film structure on light emitting diode performance

    Science.gov (United States)

    Joswick, M. D.; Campbell, I. H.; Barashkov, N. N.; Ferraris, J. P.

    1996-09-01

    We present a systematic investigation of the effects of organic film structure on light emitting diode (LED) performance. Metal/organic film/metal LEDs were fabricated using a five ring, poly(phenylene vinylene) related oligomer as the active layer. The structure of the vacuum evaporated oligomer films was varied from amorphous to polycrystalline by changing the substrate temperature during deposition. The intrinsic properties of the oligomer films and the LED performance were measured. The measured intrinsic film properties include: optical absorption, photoluminescence (PL) spectra, PL lifetime, PL efficiency, and effective carrier mobility. The measured device characteristics include current-voltage, capacitance-voltage, electroluminescence (EL) efficiency, and the contact metal/organic film Schottky barrier heights. The optical absorption and PL properties of the films are weakly dependent on film structure but the effective carrier mobility decreases with increasing crystallinity. The EL quantum efficiency decreases by more than one order of magnitude, the drive voltage at a fixed current increases, and the electron Schottky barrier height increases as the crystallinity of the film is increased. The diode current-voltage characteristic is determined by the dominant hole current and the electroluminescence efficiency is controlled by the contact limited electron injection. These results demonstrate significant effects of organic film structure on the performance of organic LEDs.

  4. Systematic investigation of the effects of organic film structure on light emitting diode performance

    Energy Technology Data Exchange (ETDEWEB)

    Joswick, M.D.; Campbell, I.H. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75080 (United States)

    1996-09-01

    We present a systematic investigation of the effects of organic film structure on light emitting diode (LED) performance. Metal/organic film/metal LEDs were fabricated using a five ring, poly(phenylene vinylene) related oligomer as the active layer. The structure of the vacuum evaporated oligomer films was varied from amorphous to polycrystalline by changing the substrate temperature during deposition. The intrinsic properties of the oligomer films and the LED performance were measured. The measured intrinsic film properties include: optical absorption, photoluminescence (PL) spectra, PL lifetime, PL efficiency, and effective carrier mobility. The measured device characteristics include current{endash}voltage, capacitance{endash}voltage, electroluminescence (EL) efficiency, and the contact metal/organic film Schottky barrier heights. The optical absorption and PL properties of the films are weakly dependent on film structure but the effective carrier mobility decreases with increasing crystallinity. The EL quantum efficiency decreases by more than one order of magnitude, the drive voltage at a fixed current increases, and the electron Schottky barrier height increases as the crystallinity of the film is increased. The diode current{endash}voltage characteristic is determined by the dominant hole current and the electroluminescence efficiency is controlled by the contact limited electron injection. These results demonstrate significant effects of organic film structure on the performance of organic LEDs. {copyright} {ital 1996 American Institute of Physics.}

  5. Quantitative Prediction of Power Loss for Damaged Photovoltaic Modules Using Electroluminescence

    Directory of Open Access Journals (Sweden)

    Timo Kropp

    2018-05-01

    Full Text Available Electroluminescence (EL is a powerful tool for the qualitative mapping of the electronic properties of solar modules, where electronic and electrical defects are easily detected. However, a direct quantitative prediction of electrical module performance purely based on electroluminescence images has yet to be accomplished. Our novel approach, called “EL power prediction of modules” (ELMO as presented here, used just two electroluminescence images to predict the electrical loss of mechanically damaged modules when compared to their original (data sheet power. First, using this method, two EL images taken at different excitation currents were converted into locally resolved (relative series resistance images. From the known, total applied voltage to the module, we were then able to calculate absolute series resistance values and the real distribution of voltages and currents. Then, we reconstructed the complete current/voltage curve of the damaged module. We experimentally validated and confirmed the simulation model via the characterization of a commercially available photovoltaic module containing 60 multicrystalline silicon cells, which were mechanically damaged by hail. Deviation between the directly measured and predicted current/voltage curve was less than 4.3% at the maximum power point. For multiple modules of the same type, the level of error dropped below 1% by calibrating the simulation. We approximated the ideality factor from a module with a known current/voltage curve and then expand the application to modules of the same type. In addition to yielding series resistance mapping, our new ELMO method was also capable of yielding parallel resistance mapping. We analyzed the electrical properties of a commercially available module, containing 72 monocrystalline high-efficiency back contact solar cells, which suffered from potential induced degradation. For this module, we predicted electrical performance with an accuracy of better

  6. The effect of complexation with platinum in polyfluorene derivatives: A photo- and electro-luminescence study

    International Nuclear Information System (INIS)

    Assaka, Andressa M.; Hu Bin; Mays, Jimmy; Iamazaki, Eduardo T.; Atvars, Teresa D.Z.; Akcelrud, Leni

    2011-01-01

    The synthesis and characterization of a polymeric structure containing fluorene units statistically linked to 3-cyclohexyl-thiophene and bipyridine PFOTBipy-poly[(4-hexylthiophene-2,5-diyl)(9,9-dihexyl-fluoren-2,7-diyl) -co-(bipyridine-5.5'-diyl)(9,9-dihexyl-fluoren-2,7-diyl)], is reported. The complexation with platinum was possible through the bipyridil units present in 10%, 50% and 100% content. The structure has a fluorenyl moiety between each bipyridine and thiophene groups resulting in a stable and efficient light-emitting polymeric material combining the well known emissive properties of fluorene, the charge mobility generated by thiophene and the electron-transfer properties of a metal complex as well. All the polymers were photo and electroluminescent materials, and showed phosphorescence at low temperatures. Photoluminescence properties were studied by steady state and time resolved spectroscopy and showed changes of both emission peak and relative intensity of the emission bands depending on the relative amount of the platinum complex. The electroluminescence followed the trends found for photoluminescence. The blue emission of the copolymer without platinum is due to the fluorenyl segments and for higher complex contents the emission is characteristic of the aggregates involving the bipyridinyl moieties. Therefore, emission color can be tuned by the complex content. The turn-on voltage was strongly reduced from 22 to 8 V for the 100% complexed copolymer, as compared to the device made with the non complexed one, but the luminance decreased, due to quenching or trapping effects. - Research Highlights: →Statistic copolymer containing fluorine, thiophene and bipyridine. →Complexation of platinum with platinum with bipyridine. →Electroluminescence and electrophosphorescence at low temperatures. →Emission color can be tuned by the complex content.

  7. [Multiple emissions in organic electroluminescent device using a mixed layer as an emitter].

    Science.gov (United States)

    Zhu, Wen-qing; Wu, You-zhi; Zheng, Xin-you; Jiang, Xue-yin; Zhang, Zhi-lin; Sun, Run-guang; Xu, Shao-hong

    2005-04-01

    A organic electroluminescent device has been fabricated by using a mixed layer as an emitter. The configuration of the device is ITO/TPD/TPD: PBD(equimole)/PBD/A1, in which TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine) and PBD (2-(4'-biphenyl)-5-(4''-tert-butylphenyl)-1,3,4-oxadiazole) are used as hole transport material and electron transport material, respectively. Broad and red-shifted electroluminescent spectra related to the fluorescence of constituent materials were observed. It is suggested that the monomer, exciplex and electroplex emissions are simultaneously involved in EL spectra by comparison of the EL with the PL spectra and decomposition of the EL spectrum. The type of exciplex is the interaction between the excited state TPD (TPD*) and PBD in the ground state, and the type of electroplex is a (D+-A-)* complex by cross-recombination of hole on the charged hole transport molecule (D+) and electron on the charged electron transport molecule (A-). All types of excited states show different formation mechanisms and recombination processes under electric field. The change of emission strengths from monomer and excited complexes lead to a blue-shift of the emissive spectra with an increasing electric field. The maximum luminance and external quantum efficiency of this device are 240 cd x (cm2)(-1) and 0.49%, respectively. The emissions from exciplex or electroplex formation at the organic solid interface generally present a broad and red-shifted emissive band, providing an effective method for tuning of emission color in organic electroluminescent devices.

  8. Quantification of Solar Cell Failure Signatures Based on Statistical Analysis of Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Parikh, Harsh; Hacke, Peter

    2017-01-01

    We demonstrate a method to quantify the extent of solar cell cracks, shunting, or damaged cell interconnects, present in crystalline silicon photovoltaic (PV) modules by statistical analysis of the electroluminescence (EL) intensity distributions of individual cells within the module. From the EL...... intensity distributions (ELID) of each cell, we calculated summary statistics such as standard deviation, median, skewness and kurtosis, and analyzed how they correlate with the magnitude of the solar cell degradation. We found that the dispersion of the ELID increases with the size and severity...

  9. Quantification of solar cell failure signatures based on statistical analysis of electroluminescence images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Parikh, Harsh; Benatto, Gisele Alves dos Reis

    2017-01-01

    We propose a method to identify and quantify the extent of solar cell cracks, shunting, or damaged cell interconnects, present in crystalline silicon photovoltaic (PV) modules by statistical analysis of the electroluminescence (EL) intensity distributions of individual cells within the module. From...... the EL intensity distributions (ELID) of each cell, we calculated summary statistics such as standard deviation, median, skewness and kurtosis, and analyzed how they correlate with the type of the solar cell degradation. We found that the dispersion of the ELID increases with the size and severity...

  10. Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

    DEFF Research Database (Denmark)

    Mesta, Murat; Carvelli, Marco; de Vries, Rein J

    2013-01-01

    we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...

  11. First observation of liquid-xenon proportional electroluminescence in THGEM holes

    International Nuclear Information System (INIS)

    Arazi, L; Itay, R; Landsman, H; Levinson, L; Pasmantirer, B; Rappaport, M L; Vartsky, D; Breskin, A; Coimbra, A E C

    2013-01-01

    Radiation-induced proportional-electroluminescence UV signals, emitted from the holes of a Thick Gas Electron Multiplier (THGEM) electrode immersed in liquid xenon, were recorded with a PMT for the first time. Significant photon yields were observed with gamma photons and alpha particles using a 0.4 mm thick electrode with 0.3 mm diameter holes; at 2 kV across the THGEM the photon yield was estimated to be ∼ 600 UV photons/electron over 4π. This may pave the way towards the realization of novel single-phase noble-liquid radiation detectors incorporating liquid hole-multipliers (LHM); their concept is presented

  12. Use of gas mixture electroluminescence for optical data readout from wire chambers

    International Nuclear Information System (INIS)

    Polyakov, V.A.; Rykalin, V.I.; Tskhadadze, Eh.G.

    1988-01-01

    The radiation spectra, the values of electroluminescence yield and coefficients of gas amplification of Ar and Ne mixture with inorganic and organic additions in a wire chamber operating under proportional and self-quenching streamer conditions are measured. Maximum light yield: 2x10 7 photons for Ar+acetone+white spirit gas mixture in a proportional regime and 1.1x10 7 photons for Ar+CO 2 + ethyl alcohol+ white spirit in self-quenching streamer regime is obtained. Three methods of optical data readout from the wire chambers are tested. The best results are obtained when spectrum shifting bands and fibers are placed behind the chamber cathode planes

  13. Study on the visibility of an electroluminescent display for automobiles; Jidoshayo EL display no shininsei

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, N; Harada, M; Idogaki, T [Denso Corp., Aichi (Japan)

    1997-10-01

    This report explores the visibility of an Electroluminescent (EL) display for automotive use. Displays for automobiles are exposed to the direct rays of the sun and forced to operate in wide temperature range. Therefore, luminous flux density by the lighting on EL display panel and operating environment temperature must be considered for the visibility evaluation. Sensory evaluation on the visibility and physical measurements such as contrast, chromaticity difference in accordance with the viewing angle change indicate that the visibility of the EL display for automobiles is advantageous over other displays. 6 refs., 11 figs., 1 tab.

  14. Electroluminescence Analysis by Tilt Polish Technique of InP-Based Semiconductor Lasers

    Science.gov (United States)

    Ichikawa, Hiroyuki; Sasaki, Kouichi; Hamada, Kotaro; Yamaguchi, Akira

    2010-03-01

    We developed an effective electroluminescence (EL) analysis method to specify the degraded region of InP-based semiconductor lasers. The EL analysis method is one of the most important methods for failure analysis. However, EL observation was difficult because opaque electrodes surround an active layer. A portion of each electrode had to be left intact for wiring to inject the current. Thus, we developed a partial polish technique for the bottom electrode. Tilt polish equipment with a rotating table was introduced; a flat polished surface and a sufficiently wide remaining portion of the bottom electrode were obtained. As a result, clear EL from the back surface of the laser was observed.

  15. Characterization of UV-enhanced SiPMs for Imaging in High Pressure Xenon Electroluminescent TPC

    International Nuclear Information System (INIS)

    Yahlali, Nadia; Lorca, David; Fernandes, L.M.P.

    2013-06-01

    The possibility of recording charged particle tracks in an electro-luminescent xenon gas TPC is investigated using a SiPM-based tracking system, operated in the demonstrator prototype of the NEXT-100 ββ decay experiment. The tracks of the ββ0ν events from the decay of the 136 Xe isotope have a distinctive topology, which allows their discrimination against single-electron events from the natural radioactivity that populates the region of interest of the neutrinoless decay in the ββ energy spectrum. Combined to the near-intrinsic energy resolution of the gaseous detector, this tracking capability provides a powerful background rejection tool for the search of the neutrinoless ββ decay aimed by the experiment. The NEXT-100 detector concepts and sensitivity and the first results of its demonstrator prototype are presented. The characterization studies relevant for the operation of UV-enhanced SiPMs used for imaging in an electro-luminescent TPC are reviewed. (authors)

  16. Temperature dependence of electroluminescent emission from (ZnS : Cu, Mn(H)) type luminophors

    International Nuclear Information System (INIS)

    Singh, L.K.

    1986-04-01

    The dependence of electroluminescent yield on temperature for hydrogen coactivated (ZnS : Cu, Mn) type triple band emitting phosphors has been investigated at various temperatures under varied operating conditions of excitations. The influence of the excitation frequency, voltage and of emission wavelengths for the electroluminescent characteristics has also been observed on temperature variations. The results have also been studied for temperature dependences of emitting brightness under the excitation by UV-radiations of 3650 A.U. and a comparison is made between temperature dependent characteristics of E.L. and PL-brightness of emissions. It was observed that, as usual, brightness maxima on temperature scale varied with alteration of operating electric fields regarding frequency and voltage both for blue, green and yellow orange emissions of attempted samples. The important thing which is observed here, is that with regards the temperature EL-intensities vary respectively for all respective emissions but emission peaks are not shifted on wave-length scale. This no shift is due to the narrowly and compactly distributed coactivator levels of hydrogen. (author)

  17. Palladium-based on-wafer electroluminescence studies of GaN-based LED structures

    Energy Technology Data Exchange (ETDEWEB)

    Salcianu, C.O.; Thrush, E.J.; Humphreys, C.J. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Plumb, R.G. [Centre for Photonic Systems, Department of Engineering, University of Cambridge, Cambridge CB3 0FD (United Kingdom); Boyd, A.R.; Rockenfeller, O.; Schmitz, D.; Heuken, M. [AIXTRON AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2008-07-01

    Electroluminescence (EL) testing of Light Emitting Diode (LED) structures is usually done at the chip level. Assessing the optical and electrical properties of LED structures at the wafer scale prior to their processing would improve the cost effectiveness of producing LED-lamps. A non-destructive method for studying the luminescence properties of the structure at the wafer-scale is photoluminescence (PL). However, the relationship between the on-wafer PL data and the final device EL can be less than straightforward (Y. H Aliyu et al., Meas. Sci. Technol. 8, 437 (1997)) as the two techniques employ different carrier injection mechanisms. This paper provides an overview of some different techniques in which palladium is used as a contact in order to obtain on-wafer electroluminescence information which could be used to screen wafers prior to processing into final devices. Quick mapping of the electrical and optical characteristics was performed using either palladium needle electrodes directly, or using the latter in conjunction with evaporated palladium contacts to inject both electrons and holes into the active region via the p-type capping layer of the structure. For comparison, indium was also used to make contact to the n-layer so that electrons could be directly injected into that layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Self-scaling minority carrier lifetime imaging using periodically modulated electroluminescence

    Science.gov (United States)

    Kropp, Timo; Berner, Marcel; Werner, Jürgen H.

    2017-11-01

    We present a straightforward self-scaling imaging technique to extract the effective minority carrier lifetime image of silicon solar cells using periodically modulated electroluminescence. This novel modulation technique overcomes main limiting factors linked to camera integration time. Our approach is based on comparing three luminescence images taken during current modulation. One image is taken while periodically injecting excess charge carriers with a pulsed current stimulation followed by an open-circuit luminescence decay. A second image with the same injection profile is taken while additionally extracting excess charge carriers at the falling edge, accelerating the luminescence decay. Both images are normalized to a steady-state image. The camera integration time is several orders of magnitude longer than the modulation period length, and no synchronization of image acquisition is needed. The intensity difference between both modulated images is used for determining a calibration factor to convert the steady-state image into the effective minority carrier lifetime image: Our modulation method enables carrier lifetime images completely independent of the image integration time. First carrier lifetime images show good agreement with data from time resolved electroluminescence.

  19. Stable electroluminescence from passivated nano-crystalline porous silicon using undecylenic acid

    Science.gov (United States)

    Gelloz, B.; Sano, H.; Boukherroub, R.; Wayner, D. D. M.; Lockwood, D. J.; Koshida, N.

    2005-06-01

    Stabilization of electroluminescence from nanocrystalline porous silicon diodes has been achieved by replacing silicon-hydrogen bonds terminating the surface of nanocrystalline silicon with more stable silicon-carbon (Si-C) bonds. Hydrosilylation of the surface of partially and anodically oxidized porous silicon samples was thermally induced at about 90 °C using various different organic molecules. Devices whose surface have been modified with stable covalent bonds shows no degradation in the EL efficiency and EL output intensity under DC operation for several hours. The enhanced stability can be attributed to the high chemical resistance of Si-C bonds against current-induced surface oxidation associated with the generation of nonradiative defects. Although devices treated with 1-decene exhibit reduced EL efficiency and brightness compared to untreatred devices, other molecules, such as ethyl-undecylenate and particularly undecylenic acid provide stable and more efficient visible electroluminescence at room temperature. Undecylenic acid provides EL brightness as high as that of an untreated device.

  20. Stable electroluminescence from passivated nano-crystalline porous silicon using undecylenic acid

    Energy Technology Data Exchange (ETDEWEB)

    Gelloz, B.; Sano, H.; Koshida, N. [Dept. Elec. and Elec. Eng., Tokyo Univ. of A and T, Koganei, Tokyo 184-8588 (Japan); Boukherroub, R. [Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, Route de Saclay, 91128 Palaiseau (France); Wayner, D.D.M.; Lockwood, D.J. [National Research Council, Ottawa (Canada)

    2005-06-01

    Stabilization of electroluminescence from nanocrystalline porous silicon diodes has been achieved by replacing silicon-hydrogen bonds terminating the surface of nanocrystalline silicon with more stable silicon-carbon (Si-C) bonds. Hydrosilylation of the surface of partially and anodically oxidized porous silicon samples was thermally induced at about 90 C using various different organic molecules. Devices whose surface have been modified with stable covalent bonds shows no degradation in the EL efficiency and EL output intensity under DC operation for several hours. The enhanced stability can be attributed to the high chemical resistance of Si-C bonds against current-induced surface oxidation associated with the generation of nonradiative defects. Although devices treated with 1-decene exhibit reduced EL efficiency and brightness compared to untreated devices, other molecules, such as ethyl-undecylenate and particularly undecylenic acid provide stable and more efficient visible electroluminescence at room temperature. Undecylenic acid provides EL brightness as high as that of an untreated device. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

    Science.gov (United States)

    Ethiraj, Anita Sagadevan; Rhen, Dani; Lee, D. H.; Kang, Dae Joon; Kulkarni, S. K.

    2016-05-01

    The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-phenyl)-4,4'-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibited bright electroluminescence emission of 24 cd/m2 at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m2 at ˜22 Volts.

  2. Near-infrared electroluminescence from double-emission-layers devices based on Ytterbium (III) complexes

    International Nuclear Information System (INIS)

    Li Zhefeng; Zhang Hongjie; Yu Jiangbo

    2012-01-01

    We investigated near-infrared electroluminescence properties of two lanthanide complexes Yb(PMBP) 3 Bath [PMBP = tris(1-phenyl-3-methyl-4-(4-tert-butylbenzacyl)-5-pyrazolone); Bath = bathophenanthroline] and Yb(PMIP) 3 TP 2 [PMIP = tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone); TP = triphenyl phosphine oxide] by fabricated the double-emission-layers devices. From the device characteristics, it is known that holes are easier to transport in Yb(PMIP) 3 TP 2 layer and electrons are easier to transport in Yb(PMBP) 3 Bath layer, at the same time, both of the two complexes can be acted as emission layers in the device. The recombination region of carriers has been confined in the interface of Yb(PMIP) 3 TP 2 /Yb(PMBP) 3 Bath, and pure Yb 3+ ion characteristic emission centered at 980 nm has been obtained. The device shows the maximum near-infrared irradiance as 14.7 mW/m 2 at the applied voltage of 17.8 V. - Highlights: ► Near-infrared electroluminescent devices with Yb(III) complexes as emission layers. ► Double-emission layer device structure introduced to balance carriers. ► Improved performance of double-emission layer device.

  3. [The role of BCP in electroluminescence of multilayer organic light-emitting devices].

    Science.gov (United States)

    Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

    2009-03-01

    As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.

  4. Influences on the white emission and stability of single layer electroluminescent devices

    International Nuclear Information System (INIS)

    Tekin, Emine

    2013-01-01

    A detailed survey about the influences on the white emission color of polyfluorene based polymer light emitting diodes (PLEDs) is reported. First, the effect of active layer thickness was studied. Subsequently keeping the polymer thickness at optimum level, PLEDs were fabricated varying polymer concentrations. All fabricated devices were fully characterized in terms of luminance, current–voltage characteristics, efficiencies, electroluminescent spectra, and CIE color coordinates. It was found that at higher polymer concentrations, electroluminescence spectra shifted to the bathochromic region so that the resulting color becomes warm white. Furthermore, the accelerated lifetimes of the PLEDs were measured and the results are discussed in terms of polymer inter-chain interactions. Consequently, the 8 mg/ml was found to be the optimum level not only for the device performances but also for the device lifetime. Highlights: • Influences on the white color emission of the polymer OLEDs were investigated. • White emission purity was found to be affected by the polymer concentration. • Lifetimes of the white emitting devices depend on the inter-chain interactions

  5. Influence of annealing temperature on erbium ion electroluminescence in Si : (Er,O) diodes with (111) substrate orientation

    CERN Document Server

    Sobolev, N A; Nikolaev, Y A

    2001-01-01

    A study has been made of the influence of temperature of the second annealing that promotes formation of optically and electrically active centers o the erbium ion electroluminescence at lambda approx = 1.54 mu m wavelength in (111) Si : (Er,O) diodes. Doping has been performed by implantation of erbium and oxygen ions at 2.0, 1.6 MeV and 0.28, 0.22 MeV energies and 3 x 10 sup 1 sup 4 cm sup - sup 2 and 3 x 10 sup 1 sup 5 cm sup - sup 2 doses, respectively. The room temperature electroluminescence intensity under the breakdown regime increases with increasing annealing temperature from 700 to 950 deg C. After annealing in the range of 975-1100 deg C, erbium electroluminescence under the breakdown regime is not observed due to appearance of microplasmas. The injection electroluminescence intensity at 80 K decreases with increasing temperature from 700 to 1100 deg C

  6. Extremely flexible, transparent, and strain-sensitive electroluminescent device based on ZnS:Cu-polyvinyl butyral composite and silver nanowires

    Science.gov (United States)

    Jun, Sungwoo; Kim, Youngmin; Ju, Byeong-Kwon; Kim, Jong-Woong

    2018-01-01

    A multifunctional alternate current electroluminescent device (ACEL) was achieved by compositing ZnS:Cu particles in polyvinyl butyral (PVB) with two layers of percolated silver nanowire (AgNW) electrodes. The strong hydrogen bonding interactions and entanglement of PVB chains considerably strengthened the PVB, and thus, the cured mixture of ZnS:Cu particles and freestanding PVB required no additional support. The device was fabricated by embedding AgNWs on both sides of the ZnS:Cu-PVB composite film using an inverted layer process and intense-pulsed-light treatment. The strong affinity of PVB to the polyvinyl pyrrolidone (PVP) layer, which capped the AgNWs, mechanically stabilized the device to such an extent that it could resist 10,000 bending cycles under a curvature radius of 500 μm. Using AgNW networks in both the top and bottom electrodes made a double-sided light-emitting device that could be applied to wearable lightings or flexible digital signage. The capacitance formed in the device sensitively varied with the applied bending and unfolding, thus demonstrating that the device can also be used as a deformation sensor.

  7. Carrier injection and recombination processes in perovskite CH3NH3PbI3 solar cells studied by electroluminescence spectroscopy

    Science.gov (United States)

    Handa, Taketo; Okano, Makoto; Tex, David M.; Shimazaki, Ai; Aharen, Tomoko; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-02-01

    Organic-inorganic hybrid perovskite materials, CH3NH3PbX3 (X = I and Br), are considered as promising candidates for emerging thin-film photovoltaics. For practical implementation, the degradation mechanism and the carrier dynamics during operation have to be clarified. We investigated the degradation mechanism and the carrier injection and recombination processes in perovskite CH3NH3PbI3 solar cells using photoluminescence (PL) and electroluminescence (EL) imaging spectroscopies. By applying forward bias-voltage, an inhomogeneous distribution of the EL intensity was clearly observed from the CH3NH3PbI3 solar cells. By comparing the PL- and EL-images, we revealed that the spatial inhomogeneity of the EL intensity is a result of the inhomogeneous luminescence efficiency in the perovskite layer. An application of bias-voltage for several tens of minutes in air caused a decrease in the EL intensity and the conversion efficiency of the perovskite solar cells. The degradation mechanism of perovskite solar cells under bias-voltage in air is discussed.

  8. Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells

    Science.gov (United States)

    2017-12-04

    Air Mass CNT Carbon Nanotubes DIV Dark Current -Voltage DMA Dynamic Mechanical Analysis EL Electroluminescence FEM Finite Element Method IMM...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0174 TR-2017-0174 ELECTRODEPOSITION OF METAL MATRIX COMPOSITES AND MATERIALS CHARACTERIZATION FOR THIN-FILM SOLAR...research which is exempt from public affairs security and policy review in accordance with AFI 61-201, paragraph 2.3.5.1. This report is available to

  9. A photovoltaic module diagnostic setup for lock-in-thermography and lock-in electroluminescence imaging

    DEFF Research Database (Denmark)

    Parikh, Harsh; Spataru, Sergiu; Sera, Dezso

    2018-01-01

    Electroluminescence (EL) imaging and infrared (IRT) thermography techniques have become indispensable tools in recent years for health diagnostic of PV modules in solar industry application. Complementary to these imaging methods, lock-in techniques can effectively remove noise by periodically...... modulating the input signal and averaging it over a desired number of periods. We propose a combined lock-in EL and lock-in IRT diagnostic setup for accurate analysis of different types of faults occurring in a solar module. The setup is built around a Goldeye CL-033 high-speed SWIR camera, which can acquire...... experimental work on a (36/72) cell solar module using combined (EL) or (IRT) lock-in-thermography. The setup allows one to investigate the different technological problems that can occur when performing PV diagnostics in drone-based inspections....

  10. Density-matrix approach for the electroluminescence of molecules in a scanning tunneling microscope.

    Science.gov (United States)

    Tian, Guangjun; Liu, Ji-Cai; Luo, Yi

    2011-04-29

    The electroluminescence (EL) of molecules confined inside a nanocavity in the scanning tunneling microscope possesses many intriguing but unexplained features. We present here a general theoretical approach based on the density-matrix formalism to describe the EL from molecules near a metal surface induced by both electron tunneling and localized surface plasmon excitations simultaneously. It reveals the underlying physical mechanism for the external bias dependent EL. The important role played by the localized surface plasmon on the EL is highlighted. Calculations for porphyrin derivatives have reproduced corresponding experimental spectra and nicely explained the observed unusual large variation of emission spectral profiles. This general theoretical approach can find many applications in the design of molecular electronic and photonic devices.

  11. Electroluminescence from a n-ZnO/p-GaN hybrid LED

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Arne; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology, Hans-Sommer Str. 66, 38106 Braunschweig (Germany); Kwack, Ho-Sang; Dang, Le Si [Institut Neel, CNRS-UJF, 25, rue des Martyrs, 38042 Grenoble (France)

    2010-06-15

    In this work we report on the fabrication and characterization of a n-ZnO/p-GaN heterojunction LED. The p-GaN layer was fabricated using MOCVD on Al{sub 2}O{sub 3} with Mg as the acceptor whereas the ZnO nanostructures were grown in a very simple vapor transport system without any additionally doping. Room temperature electroluminescence (EL) measurements show green deep band emission centered at 2.3 eV which is clearly visible with the naked eye when the structure is forward biased. Cathodoluminescence mapping was performed to explain the absence of the band edge emission in the EL spectrum. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Automatic Detection and Evaluation of Solar Cell Micro-Cracks in Electroluminescence Images Using Matched Filters

    Energy Technology Data Exchange (ETDEWEB)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2016-11-21

    A method for detecting micro-cracks in solar cells using two dimensional matched filters was developed, derived from the electroluminescence intensity profile of typical micro-cracks. We describe the image processing steps to obtain a binary map with the location of the micro-cracks. Finally, we show how to automatically estimate the total length of each micro-crack from these maps, and propose a method to identify severe types of micro-cracks, such as parallel, dendritic, and cracks with multiple orientations. With an optimized threshold parameter, the technique detects over 90 % of cracks larger than 3 cm in length. The method shows great potential for quantifying micro-crack damage after manufacturing or module transportation for the determination of a module quality criterion for cell cracking in photovoltaic modules.

  13. Blue-light-emitting organic electroluminescence via exciplex emission based on a fluorene derivative

    International Nuclear Information System (INIS)

    Li Fushan; Chen Zhijian; Wei Wei; Cao Huayu; Gong Qihuang; Teng Feng; Qian Lei; Wang Yuanmin

    2004-01-01

    The synthesis of a high photoluminescence efficiency (88%, compared with tris(8-hydroxyquinoline)(Alq 3 )) organic material 9,9-Dibutyl-N,N,N,N-tetraphenyl-9H-fluorene-2,7-diamine (DTFD) via Ullmann condensation was reported. Exiciplex emission of the ITO/DTFD/2,2-[1,2-phenylenebis(oxy)]bis(N,N-diphenylacetamide)/Alq 3 /LiF/Al device was observed and the peak wavelength of the emission was measured to be 480 nm, which belongs to the blue region. A turn-on voltage as low as 4 V and maximal brightness as large as 400 cd m -2 were measured. The electroluminescence spectrum was observed to be blue-shifted with increase in applied voltage

  14. Influence of gamma-irradiation on the electroluminescence of ZnSe:Zn,Te crystals

    International Nuclear Information System (INIS)

    Elmuratova, D.B.; Ibragimova, E.M.

    2007-01-01

    Effect of 60 Co gamma-radiation at the dose rate of 10 Gy/s on electroluminescence (El)Zn Se crystals with 0.5 weight % Te treated in zinc vapor was studied for possible manufacturing of light emitting structures. Broad El band with the maximum at 610 nm is excited in the origin samples at a voltage above 15 V. After irradiation to the high dose of 10 6 Gy the El intensity grows by ∼2.5 times in the direct polarity at 24 V. The observed El of Zn Se:Zn,Te single crystals is assumed to be caused by the charge carrier recombination at the interstitial zinc centers by the excitation mechanism of a barrier sub breakdown type (authors)

  15. An electroluminescence device for printable electronics using coprecipitated ZnS:Mn nanocrystal ink

    International Nuclear Information System (INIS)

    Toyama, T; Hama, T; Adachi, D; Nakashizu, Y; Okamoto, H

    2009-01-01

    Electroluminescence (EL) devices for printable electronics using coprecipitated ZnS:Mn nanocrystal (NC) ink are demonstrated. The EL properties of these devices were investigated along with the structural and optical properties of ZnS:Mn NCs with an emphasis on their dependence on crystal size. Transmission electron microscopy and x-ray diffraction studies revealed that the NCs, with a crystal size of 3-4 nm, are nearly monodisperse; the crystal size can be controlled by the Zn 2+ concentration in the starting solution for coprecipitation. The results of optical studies indicate the presence of quantum confinement effects; in addition, the NC surfaces are well passivated, regardless of the crystal size. Finally, an increase in the luminance of EL devices with a decrease in crystal size is observed, which suggests the excitation mechanism of ZnS:Mn NC EL devices.

  16. Visible-light electroluminescence in Mn-doped GaAs light-emitting diodes

    International Nuclear Information System (INIS)

    Nam Hai, Pham; Maruo, Daiki; Tanaka, Masaaki

    2014-01-01

    We observed visible-light electroluminescence (EL) due to d-d transitions in light-emitting diodes with Mn-doped GaAs layers (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show two peaks at 1.89 eV and 2.16 eV, which are exactly the same as 4 A 2 ( 4 F) → 4 T 1 ( 4 G) and 4 T 1 ( 4 G) → 6 A 1 ( 6 S) transitions of Mn atoms doped in ZnS. The temperature dependence and the current-density dependence are consistent with the characteristics of d-d transitions. We explain the observed EL spectra by the p-d hybridized orbitals of the Mn d electrons in GaAs

  17. White-electroluminescent device with horizontally patterned blue/yellow phosphor-layer structure

    International Nuclear Information System (INIS)

    Won Park, Boo; Sik Choi, Nam; Won Park, Kwang; Mo Son, So; Kim, Jong Su; Kyun Shon, Pong

    2007-01-01

    White-electroluminescent (EL) devices with stripe-patterned and square-patterned phosphor-layer structures are fabricated through a screen printing method: electrode/BaTiO 3 insulator layer/patterned blue ZnS:Cu, Cl and yellow ZnS:Cu, Mn phosphor layer/ITO PET substrate. The luminous intensities of EL devices with stripe-patterned and square-patterned phosphor-layer structures are 33% and 23% higher than a conventional device with the phosphor-layer structure without any patterns using the phosphor blend. It can be explained in terms of the absorption of the emitted blue light of blue phosphor layer by the yellow-emitting phosphor layer. The EL device of our patterned phosphor-layer structure gives the possibility to enhance the luminance

  18. Electroluminescent properties of an electrochemically cross-linkable carbazole peripheral poly(benzyl ether) dendrimer.

    Science.gov (United States)

    Park, Jin Young; Kim, Dong-Eun; Ponnapati, Ramakrishna; Kim, Jong-Min; Kwon, Young-Soo; Advincula, Rigoberto C

    2011-04-04

    The electroluminescent (EL) properties of a cross-linkable carbazole-terminated poly(benzyl ether) dendrimer, G(3)-cbz DN, doped into a PVK:PBD host matrix with a double-layer device configuration are investigated. Different concentrations of the guest material can control device efficiency, related to chromaticity of white emission and the origin of excited-state complexes occurring between hole-transporting carbazole units (PVK or G(3)-cbz DN) and electron-transporting oxadiazole (PBD). Two excited states (exciplex and electroplex) generated at the interfaces of PVK/G(3)-cbz DN and PBD result in competitive emission, exhibiting a broad band in the EL spectra. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Two-phase Cryogenic Avalanche Detector with electroluminescence gap operated in argon doped with nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Bondar, A.; Buzulutskov, A. [Budker Institute of Nuclear Physics SB RAS, Lavrentiev avenue 11, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogov street 2, 630090 Novosibirsk (Russian Federation); Dolgov, A. [Novosibirsk State University, Pirogov street 2, 630090 Novosibirsk (Russian Federation); Nosov, V.; Shekhtman, L.; Shemyakina, E.; Sokolov, A. [Budker Institute of Nuclear Physics SB RAS, Lavrentiev avenue 11, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogov street 2, 630090 Novosibirsk (Russian Federation)

    2017-02-11

    A two-phase Cryogenic Avalanche Detector (CRAD) with electroluminescence (EL) gap, operated in argon doped with a minor (49±7 ppm) admixture of nitrogen, has been studied. The EL gap was optically read out using cryogenic PMTs located on the perimeter of the gap. We present the results of the measurements of the N{sub 2} content, detector sensitivity to X-ray-induced signals, EL gap yield and electron lifetime in the liquid. The detector sensitivity, at a drift field in liquid Ar of 0.6 kV/cm, was measured to be 9 and 16 photoelectrons recorded at the PMTs per keV of deposited energy at 23 and 88 keV respectively. Such two-phase detectors, with enhanced sensitivity to the S2 (ionization-induced) signal, are relevant in the field of argon detectors for dark matter search and low energy neutrino detection.

  20. The effect of DCJTB doping concentration in PVK on the chromatic coordinate of electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F J; Xu, Z; Zhao, S L; Wang, L W; Yuan, G C [Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education (China); Zhao, D W [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)], E-mail: fjzhang@bjtu.edu.cn

    2008-05-15

    The dominant mechanism of electroluminescence (EL) from 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) doped in poly-(N-vinyl-carbazole) (PVK) system was demonstrated to be a charge carrier trapped by DCJTB molecular rather than Foerster energy transfer from PVK to DCJTB. The chromatically coordinate EL emission of PVK:DCJTB changes from (0.41, 0.31) to (0.67, 0.31) with an increase in DCJTB doping concentration. The emission peak in DCJTB shows red-shift and the shoulder emission peak at 656 nm becomes stronger as the doping concentration increases. The effect of DCJTB doping concentration on EL spectra is attributed to strong dipole-dipole interaction between the DCJTB molecule with an increase in doping concentration.

  1. Blue-light-emitting organic electroluminescence via exciplex emission based on a fluorene derivative

    Energy Technology Data Exchange (ETDEWEB)

    Li Fushan [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Chen Zhijian [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Wei Wei [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Cao Huayu [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Gong Qihuang [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Teng Feng [Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044 (China); Qian Lei [Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044 (China); Wang Yuanmin [Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044 (China)

    2004-06-21

    The synthesis of a high photoluminescence efficiency (88%, compared with tris(8-hydroxyquinoline)(Alq{sub 3})) organic material 9,9-Dibutyl-N,N,N,N-tetraphenyl-9H-fluorene-2,7-diamine (DTFD) via Ullmann condensation was reported. Exiciplex emission of the ITO/DTFD/2,2-[1,2-phenylenebis(oxy)]bis(N,N-diphenylacetamide)/Alq{sub 3}/LiF/Al device was observed and the peak wavelength of the emission was measured to be 480 nm, which belongs to the blue region. A turn-on voltage as low as 4 V and maximal brightness as large as 400 cd m{sup -2} were measured. The electroluminescence spectrum was observed to be blue-shifted with increase in applied voltage.

  2. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tregnago, G.; Fléchon, C.; Cacialli, F., E-mail: amateo@polymat.eu, E-mail: f.cacialli@ucl.ac.uk [Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, London WC1E 6BT (United Kingdom); Choudhary, S. [School of Soft Matter Research, Freiburg Institute for Advanced Studies (FRIAS), Albert-Ludwigs-Universität Freiburg, Albertstraße 19, 79104 Freiburg (Germany); Institut für Organische Chemie und Biochemie, Albert-Ludwigs-Universität Freiburg, Albertstraße 21, 79104 Freiburg (Germany); Gozalvez, C. [POLYMAT, University of the Basque Country UPV/EHU, Avenida de Tolosa 72, E-20018 Donostia-San Sebastian (Spain); Mateo-Alonso, A., E-mail: amateo@polymat.eu, E-mail: f.cacialli@ucl.ac.uk [POLYMAT, University of the Basque Country UPV/EHU, Avenida de Tolosa 72, E-20018 Donostia-San Sebastian (Spain); Ikerbasque, Basque Foundation for Science, Bilbao (Spain)

    2014-10-06

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ∼1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ∼1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  3. Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

    International Nuclear Information System (INIS)

    Zhang Qi; Zhang Hao; Xu Tao; Wei Bin; Zhang Xiao-Wen

    2015-01-01

    We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. (paper)

  4. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    International Nuclear Information System (INIS)

    Tregnago, G.; Fléchon, C.; Cacialli, F.; Choudhary, S.; Gozalvez, C.; Mateo-Alonso, A.

    2014-01-01

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ∼1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ∼1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  5. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    Science.gov (United States)

    Tregnago, G.; Fléchon, C.; Choudhary, S.; Gozalvez, C.; Mateo-Alonso, A.; Cacialli, F.

    2014-10-01

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ˜1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ˜1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  6. Organic Light-Emitting Diodes Based on Phthalimide Derivatives: Improvement of the Electroluminescence Properties

    Directory of Open Access Journals (Sweden)

    Frédéric Dumur

    2018-03-01

    Full Text Available In this study, a phthalimide-based fluorescent material has been examined as a green emitter for multilayered organic light-emitting diodes (OLEDs. By optimizing the device stacking, a maximum brightness of 28,450 cd/m2 at 11.0 V and a maximum external quantum efficiency of 3.11% could be obtained. Interestingly, OLEDs fabricated with Fluo-2 presented a 20-fold current efficiency improvement compared to the previous results reported in the literature, evidencing the crucial role of the device stacking in the electroluminescence (EL performance of a selected emitter. Device lifetime was also examined and an operational stability comparable to that reported for a standard triplet emitter i.e., bis(4-methyl-2,5-diphenyl-pyridineiridium(III acetylacetonate [(mdppy2Iracac] was evidenced.

  7. Electroluminescence of doped and undoped AlN/SiC-heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Bruesewitz, Christoph; Vetter, Ulrich; Hofsaess, Hans [II. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

    2010-07-01

    AlN with its large and direct bandgap is a useful host for optoelectronic applications. Grown on 6H-SiC, a heterojunction is created, forming a diode. The light emitted by n-doped 6H-SiC via electroluminescence forms a broad band with a maximum at a wavelength of 475 nm. With the AlN layer on the surface, nitrogen atoms can diffuse into the 6H-SiC, creating new energy levels. Depending on the direction of the current and additional dopants in the AlN layer, the carrier concentration changes and new levels are available, resulting in different colours. It is shown that in this heterojunction blue, red and white colours are feasible.

  8. Emission characteristics in solution-processed asymmetric white alternating current field-induced polymer electroluminescent devices

    Science.gov (United States)

    Chen, Yonghua; Xia, Yingdong; Smith, Gregory M.; Gu, Yu; Yang, Chuluo; Carroll, David L.

    2013-01-01

    In this work, the emission characteristics of a blue fluorophor poly(9, 9-dioctylfluorene) (PFO) combined with a red emitting dye: Bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate)iridium (III) [Ir(MDQ)2(acac)], are examined in two different asymmetric white alternating current field-induced polymer electroluminescent (FIPEL) device structures. The first is a top-contact device in which the triplet transfer is observed resulting in the concentration-dependence of the emission similar to the standard organic light-emitting diode (OLED) structure. The second is a bottom-contact device which, however, exhibits concentration-independence of emission. Specifically, both dye emission and polymer emission are found for the concentrations as high as 10% by weight of the dye in the emitter. We attribute this to the significant different carrier injection characteristics of the two FIPEL devices. Our results suggest a simple and easy way to realize high-quality white emission.

  9. Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq{sub 3} in OLED

    Energy Technology Data Exchange (ETDEWEB)

    Mu Haichuan; White, Dan; Sharpton, Buck [Office of Electronic Miniaturization, University of Alaska at Fairbanks, AK 99701 (United States); Klotzkin, David [Department of Electrical and Computer Engineering and Computer Sciences, University of Cincinnati, Cincinnati, OH 45221 (United States); De Silva, Ajith; Wagner, Hans Peter [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States)], E-mail: fnhm@uaf.edu

    2008-12-07

    The correlation of electroluminescence (EL), photoluminescence (PL) and electron mobility were investigated over temperature from 60 to 300 K in small-molecule organic light emitting diode (OLED) structures. The devices consisted of ITO/PEDOT(50 nm)/TPD(50 nm)/Alq{sub 3}(60 nm)/LiF(1 nm)/Al(90 nm), and were fabricated with high-vacuum sublimation/evaporation in a cross-linked configuration. Electron mobility was measured using an ac analysis of the device optical modulation characteristics, while PL and EL were measured by measuring optical power out at fixed pump power of 1 mW, and analysis of dc brightness-voltage (L-V) characteristics, respectively. PL intensity and mobility had a clear maximum at around 220 K, while EL efficiency was constant below 220 K and decrease monotonically above. The reason for the temperature dependent EL, PL and electron mobility behaviour will be discussed.

  10. Electroluminescence analysis for spatial characterization of parasitic optical losses in silicon heterojunction solar cells

    Science.gov (United States)

    Ahmed, Nuha; Zhang, Lei; Sriramagiri, Gowri; Das, Ujjwal; Hegedus, Steven

    2018-04-01

    Electroluminescence (EL) coupled with reflection measurements are used to spatially quantify optical losses in silicon heterojunction solar cells due to plasmonic absorption in the metal back contacts. The effect of indium tin oxide back reflector in decreasing this plasmonic absorption is found to increase the reflection from the back nickel (Ni)-aluminum (Al) and Al metals by ˜12% and ˜41%, respectively, in both bifacial and front junction silicon solar cells. Losses due to back reflection are calculated by comparison between the EL emission signals in high and low back reflection samples and are shown to be in agreement with standard reflection measurements. We conclude that the optical properties of the back contact can significantly influence the EL intensity which complicates the interpretation of EL as being primarily due to recombination especially when comparing two different devices with spatially varying back surface structures.

  11. Homogeneous Synthesis and Electroluminescence Device of Highly Luminescent CsPbBr3 Perovskite Nanocrystals.

    Science.gov (United States)

    Wei, Song; Yang, Yanchun; Kang, Xiaojiao; Wang, Lan; Huang, Lijian; Pan, Daocheng

    2017-03-06

    Highly luminescent CsPbBr 3 perovskite nanocrystals (PNCs) are homogeneously synthesized by mixing toluene solutions of PbBr 2 and cesium oleate at room temperature in open air. We found that PbBr 2 can be easily dissolved in nonpolar toluene in the presence of tetraoctylammonium bromide, which allows us to homogeneously prepare CsPbBr 3 perovskite quantum dots and prevents the use of harmful polar organic solvents, such as N,N-dimethylformamide, dimethyl sulfoxide, and N-methyl-2-pyrrolidone. Additionally, this method can be extended to synthesize highly luminescent CH 3 NH 3 PbBr 3 perovskite quantum dots. An electroluminescence device with a maximal luminance of 110 cd/m 2 has been fabricated by using high-quality CsPbBr 3 PNCs as the emitting layer.

  12. Laser nanostructuring of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

    2016-06-30

    Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  13. Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ferrara, Manuela

    2009-11-24

    The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

  14. AC Electroluminescent Processes in Pr3+-Activated (Ba0.4Ca0.6TiO3 Diphase Polycrystals

    Directory of Open Access Journals (Sweden)

    Nan Gao

    2017-05-01

    Full Text Available We investigated the properties of alternating current (AC-driven electroluminescence from (Ba0.4Ca0.6TiO3:Pr3+ diphase polycrystal-based device. The results of crystal phases and micrographs, and the symmetrical dual emissions in one AC cycle, indicate the spontaneous formation of a dielectric/phosphor/dielectric sandwich microstructure in (Ba0.4Ca0.6TiO3:Pr3+. The electroluminescent device emits a red light of 617 nm, which is attributed to the 1D2-3H4 transition of Pr3+ in the phosphor phase. At a fixed AC frequency, the intensity of electroluminescence exhibits a steep enhancement when applying an increased driving electric field that is beyond a threshold. In a fixed driving electric field, the intensity of electroluminescence shows a rapid rise at low frequencies, but reaches saturation at high frequencies. Based on a double-injection model, we discussed systematically the electroluminescent processes in a whole cycle of AC electric field, which matched well with the experimental data. Our investigation is expected to expand our understanding of such a diphase electroluminescent device, thereby promoting their applications in lighting and displays.

  15. Function and application of ultra thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sasabe, Hiroyuki

    1988-02-01

    A film 10-100mm thick which is strong dynamically to some extent and has possibility to manifest fuctions of high degree different from the nature extrapolated from the normal thin film is called an ultra thin film. As an example of its concrete application, there is an electro-luminescence element which is made by laminating 5 layers of LB films of poly-L-phenylalanine on a n-GaP and has vapor-deposited gold electrodes. When voltage of 5V is imposed to it, light emission of 565nm can be observed and the emission efficiency of 2% is obtained. Besides, it has an excellent stability through the lapse of time. There is also a junction element and the ion concentration injected into macromolecule films of this element has a Gaussian distribution from the surface towards the direction of depth. Accordingly, the most active domain in terms of semiconductor as the result of doping is the location in the neighborhood of the peak. Furthermore, a photo memory is also proposed. It is applied to the artificial hemoglobine which is made of LB films, suggesting the feasibility of creating the artificial protein capable of functioning in the conditions in which the natural protein is unable to function. (5 figs, 1 tab, 7 refs)

  16. Moisture exposure to different layers in organic light-emitting diodes and the effect on electroluminescence characteristics

    International Nuclear Information System (INIS)

    Liao, L. S.; Tang, C. W.

    2008-01-01

    Moisture effect on electroluminescence characteristics, including current density versus voltage, luminance versus voltage, luminous efficiency versus current density, dark spot formation, and operational stability of organic light-emitting diodes, has been systematically investigated by exposing each layer of the devices to moisture at room temperature. Moisture has a different effect on each of the interfaces or surfaces, and the influence increases as exposure time increases. There is a slight effect on the electroluminescence characteristics after the anode surface has been exposed to moisture. However, severe luminance decrease, dark spot formation, and operational stability degradation take place after the light-emitting layer or the electron-transporting layer is exposed to moisture. It is also demonstrated that the effect of moisture can be substantially reduced if the exposure to moisture is in a dark environment

  17. Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

    Science.gov (United States)

    Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

    2015-11-01

    In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

  18. The Electroluminescence Mechanism of Solution-Processed TADF Emitter 4CzIPN Doped OLEDs Investigated by Transient Measurements

    Directory of Open Access Journals (Sweden)

    Peng Wang

    2016-10-01

    Full Text Available High efficiency, solution-processed, organic light emitting devices (OLEDs, using a thermally-activated delayed fluorescent (TADF emitter, 1,2,3,5-tetrakis(carbazol-9-yl-4,6-dicyanobenzene (4CzIPN, are fabricated, and the transient electroluminescence (EL decay of the device with a structure of [ITO/PEDOT: PSS/4CzIPN 5 wt % doped 4,40-N,N0-dicarbazolylbiphenyl(CBP/bis-4,6-(3,5-di-4-pyridylphenyl-2-methylpyrimidine (B4PyMPM/lithium fluoride (LiF/Al], is systematically studied. The results shed light on the dominant operating mechanism in TADF-based OLEDs. Electroluminescence in the host–guest system is mainly produced from the 4CzIPN emitter, rather than the exciplex host materials.

  19. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    Energy Technology Data Exchange (ETDEWEB)

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  20. Electroluminescence of a polythiophene molecular wire suspended between a metallic surface and the tip of a scanning tunneling microscope.

    Science.gov (United States)

    Reecht, Gaël; Scheurer, Fabrice; Speisser, Virginie; Dappe, Yannick J; Mathevet, Fabrice; Schull, Guillaume

    2014-01-31

    The electroluminescence of a polythiophene wire suspended between a metallic surface and the tip of a scanning tunneling microscope is reported. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are consistent with the fluorescence of the wire junction mediated by localized plasmons. This emission is strongly attenuated for the opposite polarity. Both emission mechanism and polarity dependence are similar to what occurs in organic light emitting diodes (OLED) but at the level of a single molecular wire.

  1. Electroluminescence dependence of the simplified green light organic light emitting diodes on in situ thermal treatment

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Haichuan, E-mail: hcmu@ecust.edu.cn [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Rao, Lu [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Li, Weiling; Wei, Bin [Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechanics Engineering and Automation, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Wang, Keke; Xie, Haifen [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China)

    2015-12-01

    Highlights: • In-situ thermal treating the organic tri-layer (CBP/CBP:Ir(ppy){sub 3}/TPBi) of the green light PHOLED under various temperatures during the organic materials evaporation. • Investigating the effect of in situ thermal treatment on the electroluminescence (EL) performance of the green light PHOLED with tri-layer structures. • Provide an easy and practical way to improve the EL performance of the OLEDs without major modification of the organic materials and OLEDs structures required. - Abstract: Simplified multilayer green light phosphorescent organic light emitting diodes (PHOLED) with the structure of ITO/MoO{sub 3}(1 nm)/CBP(20 nm)/CBP:Ir(ppy){sub 3} (1 wt%) (15 nm)/TPBi(60 nm)/LiF(0.5 nm)/Al were fabricated via thermal evaporation and in situ thermal treatment (heating the OLED substrates to certain temperatures during the thermal evaporation of the organic materials) was performed. The effect of the in situ thermal treatment on the electroluminescence (EL) performance of the PHOLED was investigated. It was found that the OLED exhibited strong EL dependence on the thermal treatment temperatures, and their current efficiency was improved with the increasing temperature from room temperature (RT) to 69 °C and deteriorated with the further increasing temperature to 105 °C. At the brightness of 1000 cd/m{sup 2}, over 80% improvement of the current efficiency at the optimal thermal treatment temperature of 69 °C (64 cd/A) was demonstrated compared to that at RT (35 cd/A). Meanwhile, the tremendous influences of the in situ thermal treatment on the morphology of the multilayer CBP/CBP:Ir(ppy){sub 3}/TPBi were also observed. At the optimal thermal treatment temperature of 69 °C, the improvement of the EL performance could be ascribed to the enhancement of the electron and hole transporting in the CBP:Ir(ppy){sub 3} emitting layer, which suppressed the triplets self-quenching interactions and promoted the charge balance and excitons formation. The

  2. Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

    Science.gov (United States)

    Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

    2018-04-01

    Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

  3. Optical microcavities and enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hickmott, T. W. [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)

    2013-12-21

    Electroluminescence (EL) and electron emission into vacuum (EM) occur when a non-destructive dielectric breakdown of Al-Al{sub 2}O{sub 3}-Ag diodes, electroforming, results in the development of a filamentary region in which current-voltage (I-V) characteristics exhibit voltage-controlled negative resistance. The temperature dependence of I-V curves, EM, and, particularly, EL of Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 30 nm, has been studied. Two filters, a long-pass (LP) filter with transmission of photons with energies less than 3.0 eV and a short-pass (SP) filter with photon transmission between 3.0 and 4.0 eV, have been used to characterize EL. The voltage threshold for EL with the LP filter, V{sub LP}, is ∼1.5 V. V{sub LP} is nearly independent of Al{sub 2}O{sub 3} thickness and of temperature and is 0.3–0.6 V less than the threshold voltage for EL for the SP filter, V{sub SP}. EL intensity is primarily between 1.8 and 3.0 eV when the bias voltage, V{sub S} ≲ 7 V. EL in the thinnest diodes is enhanced compared to EL in thicker diodes. For increasing V{sub S}, for diodes with the smallest Al{sub 2}O{sub 3} thicknesses, there is a maximum EL intensity, L{sub MX}, at a voltage, V{sub LMX}, followed by a decrease to a plateau. L{sub MX} and EL intensity at 4.0 V in the plateau region depend exponentially on Al{sub 2}O{sub 3} thickness. The ratio of L{sub MX} at 295 K for a diode with 12 nm of Al{sub 2}O{sub 3} to L{sub MX} for a diode with 25 nm of Al{sub 2}O{sub 3} is ∼140. The ratio of EL intensity with the LP filter to EL intensity with the SP filter, LP/SP, varies between ∼3 and ∼35; it depends on Al{sub 2}O{sub 3} thickness and V{sub S}. Enhanced EL is attributed to the increase of the spontaneous emission rate of a dipole in a non-resonant optical microcavity. EL photons interact with the Ag and Al films to create surface plasmon polaritons (SPPs) at the metal-Al{sub 2}O

  4. Synthesis and electroluminescence properties of europium (III) complexes with new second ligands

    International Nuclear Information System (INIS)

    Liu Ze; Wen Fushan; Li Wenlian

    2005-01-01

    Two novel second ligands, 9,9-Di-(4-methoxyphenyl)-9-H-4,5-' (OMe-Spiro-DF) and 9,9-Di-(2-(4-(4-butyloxy)phenyl)-5-phenyl-1,3,4-oxadiazolyl)-phenyl-9-H-4, 5-Diazafluorene (OXD-Spiro-DF), were successfully prepared. Europium complexes, Eu(DBM) 3 (OMe-Spiro-DF) and Eu(DBM) 3 (OXD-Spiro-DF) (DBM=dibenzolylmethane) based on the two ligands were designed and synthesized. For a double-layer device with configuration of indium tin oxide (ITO)/N, N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD)/Eu(DBM) 3 (OXD-Spiro-DF) or Eu(DBM) 3 (OMe-Spiro-DF)/Mg/Ag, compared with the device based on complex Eu(DBM) 3 (OMe-Spiro-DF), the brightness and electroluminescent (EL) efficiency of device based on complex Eu(DBM) 3 (OXD-Spiro-DF) with oxadiazole-functionalized ligand OXD-Spiro-DF are significantly improved due to the improvement of electron-transporting ability. A maximum brightness of 154 cd/m 2 was obtained at 17 V in the complex Eu(DBM) 3 (OXD-Spiro-DF), about four times brighter than the corresponding complex Eu(DBM) 3 (OMe-Spiro-DF)

  5. Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Kai-Chiang Hsu

    2015-11-01

    Full Text Available This paper addressed the effect of post-annealed treatment on the electroluminescence (EL of an n-ZnO/p-GaN heterojunction light-emitting diode (LED. The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

  6. Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

    Directory of Open Access Journals (Sweden)

    Si eLi

    2015-02-01

    Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.

  7. First proof of topological signature in high pressure xenon gas with electroluminescence amplification

    CERN Document Server

    Ferrario, P.; López-March, N.; Gómez-Cadenas, J.J.; Álvarez, V.; Azevedo, C.D.R.; Borges, F.I.G.; Cárcel, S.; Cebrián, S.; Cervera, A.; Conde, C.A.N.; Dafni, T.; Díaz, J.; Diesburg, M.; Esteve, R.; Fernandes, L.M.P.; Ferreira, A.L.; Freitas, E.D.C.; Gehman, V.M.; Goldschmidt, A.; González-Díaz, D.; Gutiérrez, R.M.; Hauptman, J.; Henriques, C.A.O.; Hernando Morata, J.A.; Irastorza, I.G.; Labarga, L.; Lebrun, P.; Liubarsky, I.; Lorca, D.; Losada, M.; Luzón, G.; Marí, A.; Martín-Albo, J.; Martínez-Lema, G.; Martínez, A.; Miller, T.; Monrabal, F.; Monserrate, M.; Monteiro, C.M.B.; Mora, F.J.; Moutinho, L.M.; Muñoz Vidal, J.; Nebot-Guinot, M.; Novella, P.; Nygren, D.; Para, A.; Pérez, J.; Pérez Aparicio, J.L.; Querol, M.; Renner, J.; Ripoll, L.; Rodríguez, J.; Santos, F.P.; dos Santos, J.M.F.; Serra, L.; Shuman, D.; Simón, A.; Sofka, C.; Sorel, M.; Toledo, J.F.; Torrent, J.; Tsamalaidze, Z.; Veloso, J.F.C.A.; Villar, J.A.; Webb, R.; White, J.T.; Yahlali, N.; Yepes-Ramírez, H.

    2016-01-01

    The NEXT experiment aims to observe the neutrinoless double beta decay of xenon in a high-pressure Xe136 gas TPC using electroluminescence (EL) to amplify the signal from ionization. One of the main advantages of this technology is the possibility to reconstruct the topology of events with energies close to Qbb. This paper presents the first demonstration that the topology provides extra handles to reject background events using data obtained with the NEXT-DEMO prototype. Single electrons resulting from the interactions of Na22 1275 keV gammas and electron-positron pairs produced by conversions of gammas from the Th228 decay chain were used to represent the background and the signal in a double beta decay. These data were used to develop algorithms for the reconstruction of tracks and the identification of the energy deposited at the end-points, providing an extra background rejection factor of 24.3 +- 1.4 (stat.)%, while maintaining an efficiency of 66.7 +- 0.6 (stat.)% for signal events.

  8. Synthesis and electroluminescent properties of anthracene derivatives containing electron-withdrawing oxide moieties

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Jhin-yeong; Na, Eun Jae; Park, Soo Na [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Lee, Seok Jae [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@wow.hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

    2014-10-15

    Highlights: • Blue fluorescent material is important for application in full-color displays. • We have synthesized emitters based on anthracene connected with oxide moieties. • 1C shows a highly efficient blue EL emission due to electron-injection property. - Abstract: A series of new blue-emitting materials: (4-(10-(naphthalen-2-yl)anthracen-9-yl)phenyl)(phenyl)methanone (1); 9-(naphthalen-2-yl)-10-(4-((diphenyl)phosphine oxide)phenyl)anthracene (2); 9-(naphthalen-2-yl)-10-(4-(phenylsulfonyl)phenyl)anthracene (3) were designed and synthesized via Suzuki cross-coupling reaction. Multilayer OLEDs were fabricated in the following sequence: ITO (180 nm)/NPB (50 nm)/blue materials 1–3 (30 nm)/TPBi (15 nm)/Liq (2 nm)/Al (100 nm). All devices showed the efficient blue EL emissions. In particular, the device using 1 as an emitter exhibited efficient blue electroluminescent properties with a maximum luminous, power, external quantum efficiency and CIE coordinates of 0.36 cd/A, 0.90 lm/W, 0.55% at 20 mA/cm{sup 2} and (x = 0.16, y = 0.20) at 10.0 V, respectively.

  9. Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bergbauer, Werner [OSRAM Opto Semiconductors GmbH, Regensburg (Germany); FH Deggendorf (Germany); Laubsch, Ansgar; Peter, Matthias; Mayer, Tobias; Bader, Stefan; Oberschmid, Raimund; Hahn, Berthold [OSRAM Opto Semiconductors GmbH, Regensburg (Germany); Benstetter, Guenther [FH Deggendorf (Germany)

    2008-07-01

    As the efficiency and the luminous flux have been increased enormously in the last few years, today Light Emitting Diodes (LEDs) are even pushed to applications like general lighting and Home Cinema Projection. Still, InGaN/GaN heterostructure based LEDs suffer from loss-mechanisms like non-radiative defect and Auger recombination, carrier leakage and piezo-field induced carrier separation. To optimize the high current efficiency we evaluated the benefit of Multiple Quantum Well (MQW) compared to Single Quantum Well (SQW) LEDs. Temperature dependent electroluminescence of colour-coded structures with different Indium content in certain Quantum Wells was measured. The experiments demonstrated a strong temperature and current dependence of the MQW operation. The comparison between different LED structures showed effectively the increased LED performance of those structures which operate with a well adjusted MQW active area. Due to the enhanced carrier distribution in the high current range, these LEDs show a higher light output and additionally a reduced wavelength shift.

  10. Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes

    International Nuclear Information System (INIS)

    Bergbauer, Werner; Laubsch, Ansgar; Peter, Matthias; Mayer, Tobias; Bader, Stefan; Oberschmid, Raimund; Hahn, Berthold; Benstetter, Guenther

    2008-01-01

    As the efficiency and the luminous flux have been increased enormously in the last few years, today Light Emitting Diodes (LEDs) are even pushed to applications like general lighting and Home Cinema Projection. Still, InGaN/GaN heterostructure based LEDs suffer from loss-mechanisms like non-radiative defect and Auger recombination, carrier leakage and piezo-field induced carrier separation. To optimize the high current efficiency we evaluated the benefit of Multiple Quantum Well (MQW) compared to Single Quantum Well (SQW) LEDs. Temperature dependent electroluminescence of colour-coded structures with different Indium content in certain Quantum Wells was measured. The experiments demonstrated a strong temperature and current dependence of the MQW operation. The comparison between different LED structures showed effectively the increased LED performance of those structures which operate with a well adjusted MQW active area. Due to the enhanced carrier distribution in the high current range, these LEDs show a higher light output and additionally a reduced wavelength shift

  11. Electroluminescence pulse shape and electron diffusion in liquid argon measured in a dual-phase TPC

    Energy Technology Data Exchange (ETDEWEB)

    Agnes, P.; et al.

    2018-02-05

    We report the measurement of the longitudinal diffusion constant in liquid argon with the DarkSide-50 dual-phase time projection chamber. The measurement is performed at drift electric fields of 100 V/cm, 150 V/cm, and 200 V/cm using high statistics $^{39}$Ar decays from atmospheric argon. We derive an expression to describe the pulse shape of the electroluminescence signal (S2) in dual-phase TPCs. The derived S2 pulse shape is fit to events from the uppermost portion of the TPC in order to characterize the radial dependence of the signal. The results are provided as inputs to the measurement of the longitudinal diffusion constant DL, which we find to be (4.12 $\\pm$ 0.04) cm$^2$/s for a selection of 140keV electron recoil events in 200V/cm drift field and 2.8kV/cm extraction field. To study the systematics of our measurement we examine datasets of varying event energy, field strength, and detector volume yielding a weighted average value for the diffusion constant of (4.09 $\\pm$ 0.09) cm$^2$ /s. The measured longitudinal diffusion constant is observed to have an energy dependence, and within the studied energy range the result is systematically lower than other results in the literature.

  12. Functionalized organic semiconductor molecules to enhance charge carrier injection in electroluminescent cell

    Science.gov (United States)

    Yalcin, Eyyup; Kara, Duygu Akin; Karakaya, Caner; Yigit, Mesude Zeliha; Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Demic, Serafettin; Kus, Mahmut; Aboulouard, Abdelkhalk

    2017-07-01

    Organic semiconductor (OSC) materials as a charge carrier interface play an important role to improve the device performance of organic electroluminescent cells. In this study, 4,4″-bis(diphenyl amino)-1,1':3‧,1″-terphenyl-5'-carboxylic acid (TPA) and 4,4″-di-9H-carbazol-9-yl-1,1':3‧,1″-terphenyl-5'-carboxylic acid (CAR) has been designed and synthesized to modify indium tin oxide (ITO) layer as interface. Bare ITO and PEDOT:PSS coated on ITO was used as reference anode electrodes for comparison. Furthermore, PEDOT:PSS coated over CAR/ITO and TPA/ITO to observe stability of OSC molecules and to completely cover the ITO surface. Electrical, optical and surface characterizations were performed for each device. Almost all modified devices showed around 36% decrease at the turn on voltage with respect to bare ITO. The current density of bare ITO, ITO/CAR and ITO/TPA were measured as 288, 1525 and 1869 A/m2, respectively. By increasing current density, luminance of modified devices showed much better performance with respect to unmodified devices.

  13. Improved luminescence properties of nanocrystalline silicon based electroluminescent device by annealing

    International Nuclear Information System (INIS)

    Sato, Keisuke; Hirakuri, Kenji

    2006-01-01

    We report an annealing effect on electrical and luminescence properties of a red electroluminescent device consisting of nanocrystalline silicon (nc-Si). The red luminescence was generated by flowing the forward current into the device at a low threshold direct current (DC) forward voltage with a rise of annealing temperature up to 500 deg. C. Moreover, the luminescence of the device annealed at 500 deg. C was more intense than that of the device annealed at 200 deg. C or less under the same forward current density, because of the injection of a large quantity of carriers to the radiative recombination centers at the nc-Si surface vicinity. These were attained by a low resistivity of indium tin oxide (ITO) electrode and good contact at the ITO electrode/luminous layer interface region by the annealing treatment. The above results indicated that the annealing treatment of the device is effective for the realization of high luminance due to the improvement in the injection efficiency of carriers to the radiative recombination centers

  14. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    International Nuclear Information System (INIS)

    Lu, Y. F.; Cao, X. A.

    2014-01-01

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions

  15. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    International Nuclear Information System (INIS)

    Lijuan Zou

    2003-01-01

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm 2 , the optimal radiance R could reach 0.38 mW/cm 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be ∼ 10 -5 cm 2 /Vs and ∼ 10 -4 cm 2 /Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces

  16. Study of electron mobility in small molecular SAlq by transient electroluminescence method

    Science.gov (United States)

    Kumar, Pankaj; Jain, S. C.; Kumar, Vikram; Chand, Suresh; Kamalasanan, M. N.; Tandon, R. P.

    2007-12-01

    The study of electron mobility of bis(2-methyl 8-hydroxyquinoline) (triphenyl siloxy) aluminium (SAlq) by transient electroluminescence (EL) is presented. An EL device is fabricated in bilayer, ITO/N,N'-diphenyl-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD)/SAlq/LiF/Al configuration. The temporal evaluation of the EL with respect to the step voltage pulse is characterized by a delay time followed by a fast initial rise, which is followed by a slower rise. The delay time between the applied electrical pulse and the onset of EL is correlated with the carrier mobility (electron in our case). Transient EL studies for SAlq have been carried out at different temperatures and different applied electric fields. The electron mobility in SAlq is found to be field and temperature dependent and calculated to be 6.9 × 10-7 cm2 V-1 s-1 at 2.5 × 106 V cm-1 and 308 K. The EL decays immediately as the voltage is turned off and does not depend on the amplitude of the applied voltage pulse or dc offset.

  17. STM-electroluminescence from clustered C3N4 nanodomains synthesized via green chemistry process.

    Science.gov (United States)

    Andrade, E P; Costa, B B A; Chaves, C R; de Paula, A M; Cury, L A; Malachias, A; Safar, G A M

    2018-01-01

    A Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and synchrotron X-ray diffraction study on clustered C 3 N 4 nanoparticles (nanoflakes) is conducted on green-chemistry synthesized samples obtained from chitosan through high power sonication. Morphological aspects and the electronic characteristics are investigated. The observed bandgap of the nanoflakes reveals the presence of different phases in the material. Combining STM morphology, STS spectra and X-ray diffraction (XRD) results one finds that the most abundant phase is graphitic C 3 N 4 . A high density of defects is inferred from the XRD measurements. Additionally, STM-electroluminescence (STMEL) is detected in C 3 N 4 nanoflakes deposited on a gold substrate. The tunneling current creates photons that are three times more energetic than the tunneling electrons of the STM sample. We ponder about the two most probable models to explain the observed photon emission energy: either a nonlinear optical phenomenon or a localized state emission. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Study on electroluminescence processes in dye-doped organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li Weizhi [State Key Laboratory of Electronic Thin Films and Integrated devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: leewz@uestc.edu.cn; Jiang Yadong; Wang Tao [State Key Laboratory of Electronic Thin Films and Integrated devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2008-07-15

    Electroluminescence (EL) mechanism of dye-doped organic light-emitting diodes (OLEDs) was investigated by using three familiar fluorescent dyes, i.e., 5,12-Dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA), 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran(DCJTB), and 5,6,11,12-tetraphenylnaphthacene (Rubrene). EL spectra of the doped devices with structure of indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'- diamine (NPB) (40 nm)/tris-(8-hydroxyquinolate)-aluminum (Alq{sub 3}) (x nm, x=0-40 nm)/dye: Alq{sub 3} (weight ratio{approx}1%, 2 nm)/Alq{sub 3} (48-x nm)/MgAg indicated that direct carrier trapping (DCT) process dominated light emission of devices. As a result, investigation of carrier-recombination site via doping, which is conventionally applied in OLEDs, is questionable since the doping site and the dopant itself may significantly influence the carrier-recombination process in the doped devices.

  19. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  20. Synthesis, characterization, photophysics and electroluminescence based on a series of pyran-containing emitters

    Energy Technology Data Exchange (ETDEWEB)

    Yang Lifen [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Guan Min [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Bian Zuqiang [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China)]. E-mail: bianzq@pku.edu.cn; Xie Junqi [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Chen Tianpeng [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Huang Chunhui [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China)]. E-mail: chhuang@pku.edu.cn

    2006-04-03

    Four unsymmetric as well as symmetric carbazole or oxadiazole modified pyran-containing compounds have been synthesized and characterized. These compounds are 4-(dicyanomethylene)-2-methyl-6-(4-(carbazolo-9-yl)phenyl)-4H-pyran (10), 4-(dicyanomethylene)-2,6-bis(4-(carbazolo-9-yl)phenyl)-4H-pyran (11), 4-(dicyanomethylene)-2-methyl-6-(4-tert-phenyl)-1,3,4-oxdiazole-4-phenyl)-4 H-pyran (12), and 4-(dicyanomethylene)-2,6-bis(4-tert-phenyl)-1,3, 4-oxdiazole-4-phenyl-4H-pyran (13). Photoluminescent measurements indicated that their maximal emissions can be tuned from 543 to 590 nm in acetone solution. Electroluminescent studies based on these compounds as dopants resulted in greenish yellow light emission. It was found that the device based on the bis-condensed symmetric compound (11) with the configuration of indium tin oxide / Copper (II) phthalocyanine (5 nm) / N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (40 nm) / compound (11) : tris-(8-quinolinolato)aluminium (Alq{sub 3}) (1%) (30 nm) / 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (5 nm) / Alq{sub 3} (40 nm) / Mg : Ag (9 : 1) (200 nm) / Ag (80 nm) has achieved the highest luminance (6869 cd/m{sup 2}) and efficiency (1.32 lm/W and 2.52 cd/A) among the four emitters.

  1. Bright electroluminescence from a chelate phosphine oxide Eu{sup III} complex with high thermal performance

    Energy Technology Data Exchange (ETDEWEB)

    Xu Hui [School of Chemistry and Materials, Heilongjiang University, 74 Xuefu Road, Nangang District, Harbin 150080, Heilongjiang Province (China); Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 Xinmofan Road, Nanjing 21003, Jiangsu Province (China); Yin Kun; Wang Lianhui [Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 Xinmofan Road, Nanjing 21003, Jiangsu Province (China); Huang Wei [Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433 (China)], E-mail: wei-huang@njupt.edu.cn

    2008-10-01

    The chelate phosphine oxide ligand 1,8-bis(diphenylphosphino)naphthalene oxide (NaPO) was used to prepare complex 1 tris(2-thenoyltrifluoroacetonate)(1,8-bis(diphenylphosphino)naphthalene oxide)europium(III). The rigid structure of NaPO makes 1 have more compact structure resulting in a temperature of glass transition as high as 147 deg. C, which is the highest in luminescent Eu{sup III} complexes, and a higher decomposition temperature of 349 deg. C. The improvement of carrier transfer ability of NaPO was proved by Gaussian simulation. The multi-layered electroluminescent device based on 1 had a low turn-on voltage of 6.0 V, the maximum brightness of 601 cd m{sup -2} at 21.5 V and 481.4 mA cm{sup -2}, and the excellent voltage-independent spectral stability. These properties demonstrated NaPO cannot only be favorable to form the rigid and compact complex structure, and increase the thermal and morphological stability of the complex, but also reduce the formation of the exciplex.

  2. Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

    Science.gov (United States)

    Zhang, Qi; Zhang, Hao; Zhang, Xiao-Wen; Xu, Tao; Wei, Bin

    2015-02-01

    We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. Project supported by the National Natural Science Foundation of China (Grant Nos. 61136003 and 61275041) and the Guangxi Provincial Natural Science Foundation, China (Grant No. 2012GXNSFBA053168).

  3. Synthesis of block copolymers with well-defined alternating chromophore and flexible spacer for electroluminescence application

    Energy Technology Data Exchange (ETDEWEB)

    Wang Haiqiao; Sun Qingjiang; Li Yongfang; Li Xiaoyu

    2003-02-24

    Two novel light-emitting block copolymers, poly[1,4,7,10-tetraoxadecane-1,10-diyl-1,4-naphthalene-1,2-ethenediyl-1,4- phenylene-1,2-ethenediyl-1,4-naphthalene] (TEO-DNVB) and poly[1,4,7,10-tetraoxadecane-1,10-diyl-1,4-naphthalene-1,2-ethenediyl- (2,5-dimethoxy-1,4-phenylene)-1,2-ethenediyl-1,4-naphthalene] (TEO-MDNVB), were synthesized by using the Wittig reaction. The block copolymers are composed of the fluorescent segments, 1,4-di[2-(1-naphthyl) vinyl] benzene (DNVB) or 2,5-dimethyloxy-1,4-di[2-(1-naphthyl) vinyl] benzene (MDNVB) and the flexible segments, tri(ethylene oxide) (TEO). The copolymers were characterized by Fourier transform infrared (FT-IR), {sup 1}H-nuclear magnetic resonance ({sup 1}H-NMR), ultraviolet-visible (UV-Vis), gel permeation chromatography (GPC) and cyclic voltammograms (CV). Thermal properties were investigated with differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA) under nitrogen atmosphere. Cyclic voltammetric measurement reveals a reversible p-doping process. Efficient blue-green polymer light-emitting diodes (PLEDs) and polymer light-emitting electrochemical cells (PLECs) were successfully fabricated. The synthesis, characterization and the electroluminescent properties of the copolymers are reported in this paper.

  4. Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

    Science.gov (United States)

    Radevici, Ivan; Tiira, Jonna; Sadi, Toufik; Oksanen, Jani

    2018-05-01

    Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.

  5. Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

    Science.gov (United States)

    Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

    2018-05-01

    Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

  6. Direct Vapor Growth of Perovskite CsPbBr3 Nanoplate Electroluminescence Devices.

    Science.gov (United States)

    Hu, Xuelu; Zhou, Hong; Jiang, Zhenyu; Wang, Xiao; Yuan, Shuangping; Lan, Jianyue; Fu, Yongping; Zhang, Xuehong; Zheng, Weihao; Wang, Xiaoxia; Zhu, Xiaoli; Liao, Lei; Xu, Gengzhao; Jin, Song; Pan, Anlian

    2017-10-24

    Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr 3 nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr 3 nanoplates on prepatterned indium tin oxide (ITO) electrodes via a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr 3 Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr 3 Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems.

  7. Novel Vacuum System for In-Situ Characterization of Fluorescence Properties of Thin Films

    Science.gov (United States)

    Onozuka, Kohei; Iwata, Nobuyuki; Yamamoto, Hiroshi

    We constructed a novel vacuum system in which the cathode luminescence properties of as-prepared films can be measured in-situ. It has been observed that the Zn-Ga-O films deposited on 500°C ITO by sputtering emits light with wavelength of about 500 nm from an ultra thin Zn-rich layer formed near film surface. The luminescence induced by irradiation of electrons has also been observed for the first time in the organic bilayered TPD/Alq3 films prepared in thermal evaporation. Its wavelength blue-shifts by about 120 nm in comparison with the electroluminescence of the same materials. The developed vacuum system is useful to characterize various thin films.

  8. Film Reviews.

    Science.gov (United States)

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  9. Preparation of tris(8-hydroxyquinolinato)aluminum thin films by sputtering deposition using powder and pressed powder targets

    Science.gov (United States)

    Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Tanaka, Rei; Suda, Yoshiaki

    2017-06-01

    Tris(8-hydroxyquinolinato)aluminum (Alq3) thin films, for use in organic electroluminescence displays, were prepared by a sputtering deposition method using powder and pressed powder targets. Experimental results suggest that Alq3 thin films can be prepared using powder and pressed powder targets, although the films were amorphous. The surface color of the target after deposition became dark brown, and the Fourier transform infrared spectroscopy spectrum changed when using a pressed powder target. The deposition rate of the film using a powder target was higher than that using a pressed powder target. That may be because the electron and ion densities of the plasma generated using the powder target are higher than those when using pressed powder targets under the same deposition conditions. The properties of a thin film prepared using a powder target were almost the same as those of a film prepared using a pressed powder target.

  10. Evidence for Space Charge in Atomic Layer Epitaxy ZnS:Mn Alternating- Current Thin-Film Electroluminescent Devices,

    Science.gov (United States)

    1993-01-01

    exists wior with ra hho agop io model within the bulk portion of the phosphor layer. Although tAon to obtin alteratinbilarplses with mp del this...field region within the ZnS. emission with a peak at 460 nm and which exhibited ther- Postulating the existence of such a low-field region mal

  11. Modeling of transient electroluminescence overshoot in bilayer organic light-emitting diodes using rate equations

    International Nuclear Information System (INIS)

    Chandra, V.K.; Chandra, B.P.; Tiwari, M.; Baghel, R.N.; Ramrakhiani, M.

    2012-01-01

    When a voltage pulse is applied under forward biased condition to a spin-coated bilayer organic light-emitting diode (OLED), then initially the electroluminescence (EL) intensity appearing after a delay time, increases with time and later on it attains a saturation value. At the end of the voltage pulse, the EL intensity decreases with time, attains a minimum intensity and then it again increases with time, attains a peak value and later on it decreases with time. For the OLEDs, in which the lifetime of trapped carriers is less than the decay time of the EL occurring prior to the onset of overshoot, the EL overshoot begins just after the end of voltage pulse. The overshoot in spin-coated bilayer OLEDs is caused by the presence of an interfacial layer of finite thickness between hole and electron transporting layers in which both transport molecules coexist, whereby the interfacial energy barrier impedes both hole and electron passage. When a voltage pulse is applied to a bilayer OLED, positive and negative space charges are established at the opposite faces of the interfacial layer. Subsequently, the charge recombination occurs with the incoming flux of injected carriers of opposite polarity. When the voltage is turned off, the interfacial charges recombine under the action of their mutual electric field. Thus, after switching off the external voltage the electrons stored in the interface next to the anode cell compartment experience an electric field directed from cathode to anode, and therefore, the electrons move towards the cathode, that is, towards the positive space charge, whereby electron–hole recombination gives rise to luminescence. The EL prior to onset of overshoot is caused by the movement of electrons in the electron transporting states, however, the EL in the overshoot region is caused by the movement of detrapped electrons. On the basis of the rate equations for the detrapping and recombination of charge carriers accumulated at the interface

  12. Achievement report for fiscal 1998. Research and development of technologies for creating new organic electroluminescent devices (2nd fiscal year); 1998 nendo seika hokokusho. Shin'yuki electronics ruminessensu device no sosei gijutsu ni kansuru kenkyu kaihatsu (dai 2 nendo)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The aim of the efforts was to commercialize a multicolor, organic electroluminescent (EL) display and an energy efficient light source, to develop a highly efficient luminescent material, and to develop a protecting film for use in optical and electronic devices and technologies to seal the protecting film. Achievements in fiscal 1998 are mentioned below. The Kyushu office of Matsushita Electric Industrial Co., Ltd., manufactured a uniformly luminescent large screen, and Nisimu Electronic Industry Co., Ltd., fabricated a luminescent organic film by the wet method. As for materials, Dojindo mass-synthesized a hole transfer material, developed a new carrier transfer material, and developed a high-performance luminescent material. Daiden Co., Ltd., produced rare earth complexes and laminated pevskite. As for packaging technology, Shoei Chemical Co. developed a low-expansion glass filler, Kyushu University's Advanced Technology Joint Research Center formed an SiON protecting film on an EL device, and Fukuoka Mechanic and Electric Laboratory produced a DLC (diamond-like carbon) film. (NEDO)

  13. Relationships between junction temperature, electroluminescence spectrum and ageing of light-emitting diodes

    Science.gov (United States)

    Vaskuri, Anna; Kärhä, Petri; Baumgartner, Hans; Kantamaa, Olli; Pulli, Tomi; Poikonen, Tuomas; Ikonen, Erkki

    2018-04-01

    We have developed spectral models describing the electroluminescence spectra of AlGaInP and InGaN light-emitting diodes (LEDs) consisting of the Maxwell-Boltzmann distribution and the effective joint density of states. One spectrum at a known temperature for one LED specimen is needed for calibrating the model parameters of each LED type. Then, the model can be used for determining the junction temperature optically from the spectral measurement, because the junction temperature is one of the free parameters. We validated the models using, in total, 53 spectra of three red AlGaInP LED specimens and 72 spectra of three blue InGaN LED specimens measured at various current levels and temperatures between 303 K and 398 K. For all the spectra of red LEDs, the standard deviation between the modelled and measured junction temperatures was only 2.4 K. InGaN LEDs have a more complex effective joint density of states. For the blue LEDs, the corresponding standard deviation was 11.2 K, but it decreased to 3.5 K when each LED specimen was calibrated separately. The method of determining junction temperature was further tested on white InGaN LEDs with luminophore coating and LED lamps. The average standard deviation was 8 K for white InGaN LED types. We have six years of ageing data available for a set of LED lamps and we estimated the junction temperatures of these lamps with respect to their ageing times. It was found that the LEDs operating at higher junction temperatures were frequently more damaged.

  14. Bifunctional electroluminescent and photovoltaic devices using bathocuproine as electron-transporting material and an electron acceptor

    International Nuclear Information System (INIS)

    Chen, L.L.; Li, W.L.; Li, M.T.; Chu, B.

    2007-01-01

    Electroluminescence (EL) devices, using 4, 4',4''-tris (2-methylphenyl- phenylamino) triphenylamine (m-MTDATA) as hole-transporting material and bathocuproine (BCP) as an electron-transporting material, were fabricated, which emitted bright green light peaked at 520 nm instead of the emission of m-MTDATA or BCP. It was attributed to the exciplex formation and emission at the interface of m-MTDATA and BCP. EL performance was significantly enhanced by a thin mixed layer (5 nm) of m-MTDATA and BCP inserted between the two organic layers of the original m-MTDATA/BCP bilayer device. The trilayer device showed maximum luminance of 1,205 cd/m 2 at 8 V. At a luminance of 100 cd/m 2 , the power efficiency is 1.64 cd/A. Commission International De L'Eclairoge (CIE) color coordinates of the output spectrum of the devices at 8 V are x=0.244 and y=0.464. These devices also showed photovoltaic (PV) properties, which were sensitive to UV light. The PV diode exhibits high open-circuit voltage (V oc ) of 2.10 V under illumination of 365 nm UV light with 2 mW/cm 2 . And the short-circuit current (I sc ) of 92.5x10 -6 A/cm 2 , fill factor (FF) of 0.30 and power conversion efficiency (η e ) of 2.91% are respectively achieved. It is considered that strong exciplex emission in an EL device is a good indicator of efficient charge transfer at the organic interface, which is a basic requirement for good PV performance. Both the bilayer and trilayer devices showed EL and PV properties, suggesting their potential use as multifunction devices

  15. Synthesis and Electroluminescent Properties of Julolidine-π-Juloidine Type Materials with the Bulky Adamantane Groups

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kum Hee; Yoon, Seung Soo [Sungkyunkwan Univ., Suwon (Korea, Republic of); Lee, Seok Jae; Kim, Young Kwan [Hongik Univ., Seoul (Korea, Republic of)

    2012-11-15

    A main problem of red emitting material, which contributes to their low EL performances, is the concentration quenching due to the effective self aggregation and the consequent formation of excimers. To avoid this drawback and thus improve the EL properties of red fluorescent OLED devices, many synthetic efforts have been conducted to develop new emitting materials with the structural motifs to suppress self-aggregation by the weakening intermolecular attractive interactions. Particularly, the introduction of bulky moieties in the emitters would provide the steric hindrance between emitting materials in solid state devices and thus reduce the self-aggregation. Nevertheless, EL performances of red materials still need to be improved for the practical applications. In conclusion, we designed and synthesized three julolidine-π-juloidine type emitting materials (1-3) with the bulky adamantane groups. To study their electroluminescent properties, the multilayered OLED devices with the structure of ITO/NPB (40 nm)/ADN : 1-3 (x%) (20 nm)/Alq{sub 3} (40 nm)/Liq (2 nm)/Al were fabricated. All devices using emitters 1-3 showed the efficient emissions, in which their EL performances depend on the structure of emitters sensitively. Particularly, a device using emitter 3 exhibited the efficient orange-red emission with the luminous and power efficiencies of 4.79 cd/A and 1.76 lm/W at 20 mA/cm{sup 2}, respectively. The CIE coordinates of this device was (0.57, 0.42) at 7.0 V.

  16. Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

    Science.gov (United States)

    Al-Amody, Fuad H.

    This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

  17. Bifunctional electroluminescent and photovoltaic devices using bathocuproine as electron-transporting material and an electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Chen, L.L. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing, 100039 (China); Institute of Functional Material Chemistry, Faculty of Chemistry, Northeast Normal University, Changchun, 130024 (China); Li, W.L. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)]. E-mail: wllioel@yahoo.com.cn; Li, M.T. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing, 100039 (China); Chu, B. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)

    2007-01-15

    Electroluminescence (EL) devices, using 4, 4',4''-tris (2-methylphenyl- phenylamino) triphenylamine (m-MTDATA) as hole-transporting material and bathocuproine (BCP) as an electron-transporting material, were fabricated, which emitted bright green light peaked at 520 nm instead of the emission of m-MTDATA or BCP. It was attributed to the exciplex formation and emission at the interface of m-MTDATA and BCP. EL performance was significantly enhanced by a thin mixed layer (5 nm) of m-MTDATA and BCP inserted between the two organic layers of the original m-MTDATA/BCP bilayer device. The trilayer device showed maximum luminance of 1,205 cd/m{sup 2} at 8 V. At a luminance of 100 cd/m{sup 2}, the power efficiency is 1.64 cd/A. Commission International De L'Eclairoge (CIE) color coordinates of the output spectrum of the devices at 8 V are x=0.244 and y=0.464. These devices also showed photovoltaic (PV) properties, which were sensitive to UV light. The PV diode exhibits high open-circuit voltage (V {sub oc}) of 2.10 V under illumination of 365 nm UV light with 2 mW/cm{sup 2}. And the short-circuit current (I {sub sc}) of 92.5x10{sup -6} A/cm{sup 2}, fill factor (FF) of 0.30 and power conversion efficiency ({eta} {sub e}) of 2.91% are respectively achieved. It is considered that strong exciplex emission in an EL device is a good indicator of efficient charge transfer at the organic interface, which is a basic requirement for good PV performance. Both the bilayer and trilayer devices showed EL and PV properties, suggesting their potential use as multifunction devices.

  18. Pulsed Electrical Spin Injection into InGaAs Quantum Dots: Studies of the Electroluminescence Polarization Dynamics

    International Nuclear Information System (INIS)

    Asshoff, P.; Loeffler, W.; Fluegge, H.; Zimmer, J.; Mueller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.

    2010-01-01

    We present time-resolved studies of the spin polarization dynamics during and after initialization through pulsed electrical spin injection into InGaAs quantum dots embedded in a p-i-n-type spin-injection light-emitting diode. Experiments are performed with pulse widths in the nanosecond range and a time-resolved single photon counting setup is used to detect the subsequent electroluminescence. We find evidence that the achieved spin polarization shows an unexpected temporal behavior, attributed mainly to many-carrier and non-equilibrium effects in the device.

  19. Photo- and electro-luminescence of rare earth doped ZnO electroluminors at liquid nitrogen temperature

    International Nuclear Information System (INIS)

    Bhushan, S.; Kaza, B.R.; Pandey, A.N.

    1981-01-01

    Photo (PL) and electroluminescent (EL) spectra of some rare earth (La, Gd, Er or Dy) doped ZnO electroluminors have been investigated at liquid nitrogen temperature (LNT) and compared with their corresponding results at room temperature (RT). In addition to three bands observed at RT, one more band on the higher wavelength side appears in EL spectra. Spectral shift with the exciting intensity at LNT supports the donor-acceptor (DA) model in which the rare earths form the donor levels. From the temperature dependent studies of PL and EL brightness, the EL phenomenon is found to be more susceptible to traps. (author)

  20. Electroluminescence and charge photogeneration in poly(9,9-dihexadecylfluorene-2,7-diyl) and its blends

    Czech Academy of Sciences Publication Activity Database

    Cimrová, Věra; Výprachtický, Drahomír

    2004-01-01

    Roč. 212, č. 1 (2004), s. 281-286 ISSN 1022-1360. [Electrical and Related Properties of Polymers and Other Organic Solids /9./. Prague, 14.07.2002-18.07.2002] R&D Projects: GA ČR GA203/01/0512; GA ČR GA102/98/0696 Institutional research plan: CEZ:AV0Z4050913 Keywords : electroluminescence * LEDs * poly(1,4-phenylene)s Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.691, year: 2004

  1. Hybrid AC EL structures with thin protective ZnO film

    International Nuclear Information System (INIS)

    Tsvetkova, E; Dikov, H; Kolentsov, K; Yourukova, L; Zhechev, D; Steflekova, V

    2008-01-01

    Alternating current hybrid electroluminescent Al/SnO 2 /ZnS: Cu/ZnO/Al structures with blue emission have been prepared. In these ZnO films are used as protective layers. The optical properties of different RF magnetron sputtered ZnO films have been studied. The voltage - brightness characteristics of AC EL structures with a ZnO protective film and conventional structures with a TiO 2 protective layer are compared. The investigation shows that the brightness of the structures with a ZnO protective film is higher. The improved characteristics of these new hybrid structures could be used in preparing various systems for representation of permanent or variable light information

  2. Electrochemical synthesis of MoS2 quantum dots embedded nanostructured porous silicon with enhanced electroluminescence property

    Science.gov (United States)

    Shrivastava, Megha; Kumari, Reeta; Parra, Mohammad Ramzan; Pandey, Padmini; Siddiqui, Hafsa; Haque, Fozia Z.

    2017-11-01

    In this report we present the successful enhancement in electroluminescence (EL) in nanostructured n-type porous silicon (PS) with an idea of embedding luminophorous Molybdenum disulfide (MoS2) quantum dots (QD's). Electrochemical anodization technique was used for the formation of PS surface and MoS2 QD's were prepared using the electrochemical route. Spin coating technique was employed for the proper incorporation of MoS2 QD's within the PS nanostructures. The crystallographic analysis was performed using X-ray diffraction (XRD), Raman and Fourier transform infrared (FT-IR) spectroscopy techniques. However, surface morphology was determined using Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The optical measurements were performed on photoluminescence (PL) spectrophotometer; additionally for electroluminescence (EL) study special arrangement of instrumental setup was made at laboratory level which provides novelty to this work. A diode prototype was made comprising Ag/MoS2:PS/Silicon/Ag for EL study. The MoS2:PS shows a remarkable concentration dependent enhancement in PL as well as in EL intensities, which paves a way to better utilize this strategy in optoelectronic device applications.

  3. High-efficiency electroluminescence and amplified spontaneous emission from a thermally activated delayed fluorescent near-infrared emitter

    Science.gov (United States)

    Kim, Dae-Hyeon; D'Aléo, Anthony; Chen, Xian-Kai; Sandanayaka, Atula D. S.; Yao, Dandan; Zhao, Li; Komino, Takeshi; Zaborova, Elena; Canard, Gabriel; Tsuchiya, Youichi; Choi, Eunyoung; Wu, Jeong Weon; Fages, Frédéric; Brédas, Jean-Luc; Ribierre, Jean-Charles; Adachi, Chihaya

    2018-02-01

    Near-infrared organic light-emitting diodes and semiconductor lasers could benefit a variety of applications including night-vision displays, sensors and information-secured displays. Organic dyes can generate electroluminescence efficiently at visible wavelengths, but organic light-emitting diodes are still underperforming in the near-infrared region. Here, we report thermally activated delayed fluorescent organic light-emitting diodes that operate at near-infrared wavelengths with a maximum external quantum efficiency of nearly 10% using a boron difluoride curcuminoid derivative. As well as an effective upconversion from triplet to singlet excited states due to the non-adiabatic coupling effect, this donor-acceptor-donor compound also exhibits efficient amplified spontaneous emission. By controlling the polarity of the active medium, the maximum emission wavelength of the electroluminescence spectrum can be tuned from 700 to 780 nm. This study represents an important advance in near-infrared organic light-emitting diodes and the design of alternative molecular architectures for photonic applications based on thermally activated delayed fluorescence.

  4. Low-threshold pure UV electroluminescence from n-ZnO:Al/i-layer/n-GaN heterojunction

    International Nuclear Information System (INIS)

    Li Songzhan; Fang Guojia; Long Hao; Wang Haoning; Huang Huihui; Mo Xiaoming; Zhao Xingzhong

    2012-01-01

    Ultraviolet (UV) electroluminescence (EL) of n-ZnO:Al (AZO)/i-layer/n-GaN heterojunctions with different intrinsic layers has been obtained. Rectifying behavior and EL spectra of the heterojunctions are investigated at room temperature. Under positive voltage, a dominant UV emission peak around ∼370 nm is observed for both AZO/i-ZnO/n-GaN and AZO/i-MgO/n-GaN heterojunctions. Nevertheless, the UV emission peak intensity of AZO/i-MgO/n-GaN heterojunction is much stronger than that of AZO/i-ZnO/n-GaN heterojunction at the same voltage. The threshold voltage of AZO/i-MgO/n-GaN heterostructured device is as low as 2.3 V. The difference of EL spectra and the emission mechanism in these devices are discussed. - Highlights: ► UV electroluminescence of n-ZnO:Al/i-layer/n-GaN heterojunctions has been obtained. ► Under positive voltage, a dominant UV emission peak around ∼370 nm is observed for both heterojunctions. ► The UV emission peak intensity of the heterojunction with i-MgO layer is much stronger than that with i-ZnO layer at the same voltage. ► The threshold voltage of n-ZnO:Al/i-MgO/n-GaN heterostructured device is as low as 2.3 V.

  5. High performance yellow organic electroluminescent devices by doping iridium(III) complex into host materials with stepwise energy levels

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Rongzhen; Zhou, Liang, E-mail: zhoul@ciac.ac.cn; Jiang, Yunlong; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

    2015-10-15

    In this work, we aim to further improve the electroluminescent (EL) performances of a yellow light-emitting iridium(III) complex by designing double light-emitting layers (EMLs) devices having stepwise energy levels. Compared with single-EML devices, these designed double-EML devices showed improved EL efficiency and brightness attributed to better balance in carriers. In addition, the stepwise distribution in energy levels of host materials is instrumental in broadening the recombination zone, thus delaying the roll-off of EL efficiency. Based on the investigation of carriers' distribution, device structure was further optimized by adjusting the thickness of deposited layers. Finally, yellow EL device (Commission Internationale de l'Eclairage (CIE) coordinates of (0.446, 0.542)) with maximum current efficiency, power efficiency and brightness up to 78.62 cd/A (external quantum efficiency (EQE) of 21.1%), 82.28 lm/W and 72,713 cd/m{sup 2}, respectively, was obtained. Even at the high brightness of 1000 cd/m{sup 2}, EL efficiency as high as 65.54 cd/A (EQE=17.6%) can be retained. - Highlights: • Yellow electroluminescent devices were designed and fabricated. • P-type and n-type materials having stepwise energy levels were chosen as host materials. • Better balance of holes and electrons causes the enhanced efficiencies. • Improved carriers' trapping suppresses the emission of host material.

  6. PANI Branches onto Donor-Acceptor Copolymers: Synthesis, Characterization and Electroluminescent Properties of New 2D-Materials

    Directory of Open Access Journals (Sweden)

    Ignacio A. Jessop

    2018-05-01

    Full Text Available A new series of two-dimensional statistical conjugated polymers based on aniline and 9,9-dihexylfluorene as donor units and benzo- or naphtho-quinoxaline/thiadiazole derivatives as acceptor moieties, possessing PANI segments as side chains, were designed and synthesized. To investigate the effects of the perpendicular PANI branches on the properties of the main chain, the optical, electrochemical, morphological and electroluminescence properties were studied. The 2D materials tend to possess lower molecular weights and to absorb and to emit light red-shifted compared to the trunk 1D-polymers, in the yellow-red region of the visible spectrum. The 1D- and 2D-conjugated polymers present optical band gaps ranging from 2.15–2.55 eV, HOMO energy levels between −5.37 and −5.60 eV and LUMO energy levels between −3.02 and −3.29 eV. OLED devices based on these copolymers were fabricated. Although the performances were far from optimal due to the high turn-on voltages for which electroluminescence phenomena occur, a maximum luminescence of 55,100 cd/m2 together with a current density of 65 mA/cm2 at 18.5 V were recorded for a 2D-copolymer, PAFC6TBQ-PANI.

  7. Electroluminescence dependence on the organic thickness in ZnO nano rods/Alq3 heterostructure devices.

    Science.gov (United States)

    Kan, Pengzhi; Wang, Yongsheng; Zhao, Suling; Xu, Zheng; Wang, Dawei

    2011-04-01

    ZnO nanorods are synthesised by a hydrothermal method on ITO glass. Their crystallization and morphology are detected by XRD and SEM, respectively. The results show that the ZnO nanorod array has grown primarily along a direction aligned perpendicular to the ITO substrate. The average height and diameter of the nanorods is about 130 nm and 30 nm, respectively. Then ZnO nano rods/Alq3 heterostructure LEDs are prepared by thermal evaporation of Alq3 molecules. The thicknesses of the Alq3 layers are 130 nm, 150 nm, 170 nm and 190 nm, respectively. The electroluminescence of the devices is detected under different DC bias voltages. The exciton emission of Alq3 is detected in all devices. When the thickness of Alq3 is 130 nm, the UV electroluminescence of ZnO is around 382 nm, and defect emissions around 670 nm and 740 nm are detected. Defect emissions of ZnO nanorods are prominent. When the thickness of Alq3 increases to over 170 nm, it is difficult to observe defect emissions from the ZnO nano rods. In such devices, the exciton emission of Alq3 is more prominent than other emissions under different bias voltage.

  8. Magnetically modulated electroluminescence from hybrid organic/inorganic light-emitting diodes based on electron donor-acceptor exciplex blends

    Science.gov (United States)

    Pang, Zhiyong; Baniya, Sangita; Zhang, Chuang; Sun, Dali; Vardeny, Z. Valy

    2016-03-01

    We report room temperature magnetically modulated electroluminescence from a hybrid organic/inorganic light-emitting diode (h-OLED), in which an inorganic magnetic tunnel junction (MTJ) with large room temperature magnetoresistance is coupled to an N,N,N ',N '-Tetrakis(4-methoxyphenyl)benzidine (MeO-TPD): tris-[3-(3-pyridyl)mesityl]borane (3TPYMB) [D-A] based OLED that shows thermally activated delayed luminescence. The exciplex-based OLED provides two spin-mixing channels: upper energy channel of polaron pairs and lower energy channel of exciplexes. In operation, the large resistance mismatch between the MTJ and OLED components is suppressed due to the non-linear I-V characteristic of the OLED. This leads to enhanced giant magneto-electroluminescence (MEL) at room temperature. We measured MEL of ~ 75% at ambient conditions. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  9. Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Zhu Huichao; Zhang Baolin; Li Xiangping; Dong Xin; Li Wancheng; Guan Hesong; Cui Yongguo; Xia Xiaochuan; Yang Tianpeng; Chang Yuchun; Du Guotong

    2007-01-01

    Vertically aligned ZnO films were deposited on n-InP by metalorganic chemical vapour deposition. X-ray diffraction, field emission scanning electron microscopy and photoluminescence measurements demonstrated that the ZnO films had good quality. By evaporating AuZn electrodes on both ZnO and InP surfaces, a ZnO-based light emitting device was fabricated. Under forward voltage, weak green emissions can be observed in darkness

  10. Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

    Directory of Open Access Journals (Sweden)

    P. Chen

    2017-03-01

    Full Text Available The hole distribution and electroluminescence property improvement by adjusting the relative position between quantum wells and p-doped region in InGaN/GaN multiple-quantum-well structures are experimentally and theoretically investigated. Five designed samples with different barrier layer parameters of multiple-quantum-well structure are grown by MOCVD and then fabricated into devices. The electroluminescence properties of these samples are measured and compared. It is found that the output electroluminescence intensity of samples is enhanced if the position of quantum wells shifts towards p-side, while the output power is reduced if their position is shifted towards the n-side. The theoretical calculation of characteristics of these devices using the simulation program APSYS agrees well with the experimental data, illustrating that the effect of relative position between p-doped region and quantum wells on the improvement of hole distribution and electroluminescence performance is significant, especially for InGaN/GaN multiple-quantum-well devices operated under high injection condition.

  11. Photoluminescence and electroluminescence of a novel green-yellow emitting material-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl] -pyrazine-2,3-dicarbonitrile

    International Nuclear Information System (INIS)

    Chew Siewling; Wang Pengfei; Hong Zirou; Kwong, H.L.; Tang Jianxin; Sun Shiling; Lee, C.S.; Lee, S.-T.

    2007-01-01

    A new compound with intramolecular charge transfer (ICT) property-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl] -pyrazine-2,3-dicarbonitrile(BNPPDC) was synthesized. The new compound was strongly fluorescent in non-polar and moderately polar solvents, as well as in thin solid film. The absorption and emission maxima shifted to longer wavelength with increasing solvent polarity. The fluorescence quantum yield also increased with increasing solvent polarity from non-polar to moderately polar solvents, then decreased with further increase of solvent polarity. This indicates both 'positive' and 'negative' solvatokinetic effects co-existed. Using this material as hole-transporting emitter and host emitter, we fabricated two electroluminescent (EL) devices with structures of A (ITO/BNPPDC (45 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm) and B (ITO/N,N'-diphenyl-N,N'-bis-(3-methylphenyl) (1,1'-diphenyl)4,4'-diamine (TPD) (50 nm)/BNPPDC (20 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm). The devices showed green-yellow EL emission with good efficiency and high brightness. For example, the device A exhibited a high brightness of 17400 cd/m 2 at a driving voltage of 11 V and a very low turn-on voltage (2.9 V), as well as a maximum luminous efficiency 3.61 cd/A. The device B showed a similar performance with a high brightness of 12650 cd/m 2 at a driving voltage of 13 V and a maximum luminous efficiency 3.62 cd/A. In addition, the EL devices using BNPPDC as a host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) as a dopant (configuration: ITO/TPD (60 nm)/BNPPDC:DCJTB (2%) (30 nm)/TPBI (35 nm)/Mg:Ag (200 nm)) showed a good performance with a brightness of 150 cd/m 2 at 4.5 V, a maximum brightness of 12600 cd/m 2 at 11.5 V, and a maximum luminous efficiency of 3.30 cd/A

  12. Synthesis and Characterization of Electroresponsive Materials with Applications In: Part I. Second Harmonic Generation. Part II. Organic-Lanthanide Ion Complexes for Electroluminescence and Optical Amplifiers.

    Science.gov (United States)

    Claude, Charles

    1995-01-01

    Materials for optical waveguides were developed from two different approaches, inorganic-organic composites and soft gel polymers. Inorganic-organic composites were developed from alkoxysilane and organically modified silanes based on nonlinear optical chromophores. Organically modified silanes based on N-((3^' -trialkoxysilyl)propyl)-4-nitroaniline were synthesized and sol-gelled with trimethoxysilane. After a densification process at 190^circC with a corona discharge, the second harmonic of the film was measured with a Nd:YAG laser with a fundamental wavelength of 1064nm, d_{33} = 13pm/V. The decay of the second harmonic was expressed by a stretched bi-exponential equation. The decay time (tau _2) was equal to 3374 hours, and was comparable to nonlinear optical systems based on epoxy/Disperse Orange 1. The processing temperature of the organically modified silane was limited to 200^circC due to the decomposition of the organic chromophore. Soft gel polymers were synthesized and characterized for the development of optical waveguides with dc-electrical field assisted phase-matching. Polymers based on 4-nitroaniline terminated poly(ethylene oxide-co-propylene oxide) were shown to exhibit second harmonic generation that were optically phase-matched in an electrical field. The optical signals were stable and reproducible. Siloxane polymers modified with 1-mercapto-4-nitrobenzene and 1-mercapto-4-methylsulfonylstilbene nonlinear optical chromophores were synthesized. The physical and the linear and nonlinear optical properties of the polymers were characterized. Waveguides were developed from the polymers which were optically phase -matched and had an efficiency of 8.1%. The siloxane polymers exhibited optical phase-matching in an applied electrical field and can be used with a semiconductor laser. Organic lanthanide ion complexes for electroluminescence and optical amplifiers were synthesized and characterized. The complexes were characterized for their thermal and

  13. Photoluminescence and electroluminescence of a novel green-yellow emitting material-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl] -pyrazine-2,3-dicarbonitrile

    Energy Technology Data Exchange (ETDEWEB)

    Chew Siewling [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Wang Pengfei [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101 (China)]. E-mail: wangpf@mail.ipc.ac.cn; Hong Zirou [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kwong, H.L. [Department of Biology and Chemistry, City University of Hong Kong, Hong Kong (China); Tang Jianxin [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Sun Shiling [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Lee, C.S. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China)]. E-mail: apcslee@cityu.edu.hk; Lee, S.-T. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China)]. E-mail: apannale@cityu.edu.hk

    2007-06-15

    A new compound with intramolecular charge transfer (ICT) property-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl] -pyrazine-2,3-dicarbonitrile(BNPPDC) was synthesized. The new compound was strongly fluorescent in non-polar and moderately polar solvents, as well as in thin solid film. The absorption and emission maxima shifted to longer wavelength with increasing solvent polarity. The fluorescence quantum yield also increased with increasing solvent polarity from non-polar to moderately polar solvents, then decreased with further increase of solvent polarity. This indicates both 'positive' and 'negative' solvatokinetic effects co-existed. Using this material as hole-transporting emitter and host emitter, we fabricated two electroluminescent (EL) devices with structures of A (ITO/BNPPDC (45 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm) and B (ITO/N,N'-diphenyl-N,N'-bis-(3-methylphenyl) (1,1'-diphenyl)4,4'-diamine (TPD) (50 nm)/BNPPDC (20 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm). The devices showed green-yellow EL emission with good efficiency and high brightness. For example, the device A exhibited a high brightness of 17400 cd/m{sup 2} at a driving voltage of 11 V and a very low turn-on voltage (2.9 V), as well as a maximum luminous efficiency 3.61 cd/A. The device B showed a similar performance with a high brightness of 12650 cd/m{sup 2} at a driving voltage of 13 V and a maximum luminous efficiency 3.62 cd/A. In addition, the EL devices using BNPPDC as a host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) as a dopant (configuration: ITO/TPD (60 nm)/BNPPDC:DCJTB (2%) (30 nm)/TPBI (35 nm)/Mg:Ag (200 nm)) showed a good performance with a brightness of 150 cd/m{sup 2} at 4.5 V, a maximum brightness of 12600 cd/m{sup 2} at 11.5 V, and a maximum luminous efficiency of 3.30 cd/A.

  14. Modeling of transient electroluminescence overshoot in bilayer organic light-emitting diodes using rate equations

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, V.K. [Department of Electrical and Electronics Engineering, Chhatrapati Shivaji Institute of Technology, Shivaji Nagar, Kolihapuri, Durg 491001 (C.G.) (India); Chandra, B.P., E-mail: bpchandra4@yahoo.co.in [Department of Applied Physics, Ashoka Institute of Technology and Management, Rajnandgaon 491441 (C.G.) (India); Tiwari, M. [Department of Postgraduate Studies and Research in Physics and Electronics, Rani Durgavati University, Jabalpur 482001 (M.P.) (India); Baghel, R.N. [School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, Raipur 492010 (C.G.) (India); Ramrakhiani, M. [Department of Postgraduate Studies and Research in Physics and Electronics, Rani Durgavati University, Jabalpur 482001 (M.P.) (India)

    2012-06-15

    When a voltage pulse is applied under forward biased condition to a spin-coated bilayer organic light-emitting diode (OLED), then initially the electroluminescence (EL) intensity appearing after a delay time, increases with time and later on it attains a saturation value. At the end of the voltage pulse, the EL intensity decreases with time, attains a minimum intensity and then it again increases with time, attains a peak value and later on it decreases with time. For the OLEDs, in which the lifetime of trapped carriers is less than the decay time of the EL occurring prior to the onset of overshoot, the EL overshoot begins just after the end of voltage pulse. The overshoot in spin-coated bilayer OLEDs is caused by the presence of an interfacial layer of finite thickness between hole and electron transporting layers in which both transport molecules coexist, whereby the interfacial energy barrier impedes both hole and electron passage. When a voltage pulse is applied to a bilayer OLED, positive and negative space charges are established at the opposite faces of the interfacial layer. Subsequently, the charge recombination occurs with the incoming flux of injected carriers of opposite polarity. When the voltage is turned off, the interfacial charges recombine under the action of their mutual electric field. Thus, after switching off the external voltage the electrons stored in the interface next to the anode cell compartment experience an electric field directed from cathode to anode, and therefore, the electrons move towards the cathode, that is, towards the positive space charge, whereby electron-hole recombination gives rise to luminescence. The EL prior to onset of overshoot is caused by the movement of electrons in the electron transporting states, however, the EL in the overshoot region is caused by the movement of detrapped electrons. On the basis of the rate equations for the detrapping and recombination of charge carriers accumulated at the interface

  15. Effects of copper concentration on electro-optical and structural properties of chemically deposited nanosized (Zn-Cd)S:Cu films

    International Nuclear Information System (INIS)

    Khare, Ayush

    2010-01-01

    Nanocrystalline (Zn-Cd)S films have been co-deposited on glass slide substrates by chemical bath deposition (CBD) technique at 70 deg. C for 75 min. Electroluminescent (EL), photoluminescent (PL) and structural characteristics of these films doped with Cu have been investigated. Cu doping has significant effects on the growth, structural and optical properties of the deposited (Zn-Cd)S films. EL studies show the essentiality of copper for EL emission. The effect of Cu concentration is examined on XRD, SEM, UV-vis spectroscopy, etc. The morphology of these films investigated with SEM and XRD is used to determine crystalline nature of the films. The optical absorption coefficient of the films has been found to increase with increase in Cu concentration. Voltage and frequency dependence shows the effectiveness of acceleration-collision mechanism. The trap-depth values are calculated from temperature dependence of EL brightness.

  16. Enhanced performance of organic light-emitting devices by using electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film as the anode modification layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xiaona [Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yan Jun [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Meng Lingchuan [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Sun Chenghua; Hu Xiujie; Chen Ping [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Zhou Shuyun, E-mail: zhou_shuyun@mail.ipc.ac.cn [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Teng Feng [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)

    2012-01-31

    Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films were prepared by electropolymerization on patterned indium tin oxide substrates in isopropanol solution. The thickness and doping level of the PEDOT:PSS films were controlled by adjusting the electropolymerization time and the concentration of poly(styrene sulfonate) acid, respectively. Organic light-emitting diodes were fabricated using the electropolymerized PEDOT:PSS film as the anode modification layer. The dependence of the performance on thickness of PEDOT:PSS films was investigated. It is shown that the performance of the device can be further enhanced when the thickness of PEDOT:PSS films reached an optimum condition. This method facilitates manufacturing procedures of conducting polymers films and may offer an economical route for producing organic electroluminescent devices.

  17. Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

    International Nuclear Information System (INIS)

    Chow, C.F.; Wong, S.P.; Gao, Y.; Ke, N.; Li, Q.; Cheung, W.Y.; Lourenco, M.A.; Homewood, K.P.

    2005-01-01

    Silicon MOS structures with FeSi 2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi 2 -Si MOS structures were measured as a function of temperature from 80 K to 300 K. Clear EL signals were observed even at room temperature for samples prepared at appropriate processing conditions. The EL spectra consist of two peaks, one attributed to FeSi 2 and the other attributed to Si band edge emission. While the intensity of the FeSi 2 peak showed the usual thermal quenching behavior, the Si band edge emission showed the opposite trend with its intensity increased with increasing temperature. Details of the line shapes and their temperature dependence are analyzed and discussed

  18. Color tunable electroluminescence and resistance switching from a ZnO-nanorod–TaO_x–p-GaN heterojunction

    International Nuclear Information System (INIS)

    Zhao, J L; Teo, K L; Zheng, K; Sun, X W

    2016-01-01

    Well-aligned ZnO nanorods have been prepared on p-GaN–sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaO_x is employed as the intermediate layer and an n-ZnO–TaO_x–p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaO_x layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction. (paper)

  19. Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dong, E-mail: wang.dong.539@m.kyushu-u.ac.jp; Maekura, Takayuki; Kamezawa, Sho [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Yamamoto, Keisuke; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2015-02-16

    We demonstrated direct band gap (DBG) electroluminescence (EL) at room temperature from n-type bulk germanium (Ge) using a fin type asymmetric lateral metal/Ge/metal structure with TiN/Ge and HfGe/Ge contacts, which was fabricated using a low temperature (<400 °C) process. Small electron and hole barrier heights were obtained for TiN/Ge and HfGe/Ge contacts, respectively. DBG EL spectrum peaked at 1.55 μm was clearly observed even at a small current density of 2.2 μA/μm. Superlinear increase in EL intensity was also observed with increasing current density, due to superlinear increase in population of elections in direct conduction band. The efficiency of hole injection was also clarified.

  20. Effect of gold nanorods and nanocubes on electroluminescent performances in organic light-emitting diodes and its working mechanism

    Directory of Open Access Journals (Sweden)

    Ying Xu

    2015-06-01

    Full Text Available In this manuscript we investigated the influence of Au nanoparticles on electrical and electroluminescent (EL performances in organic light-emitting diodes (OLEDs via doping as-synthesized Au nanorods (NRs or nanocubes (NCs into hole transport layer (HTL. Through accurately controlling the distance between the Au NRs and the emitting layer, altering the guest emitter’s lifetime, and replacing Au NRs with Au NCs to satisfy a better spectrum overlap with the emission guest, we got a conclusion that doping Au NRs or NCs into HTL has no significant influence on the device’s electrical and EL performances, although we observed an increase in the spontaneous emission rate in a fluorescent material by the exciton-surface plasmon-coupling. Our results suggest that a further research on emission mechanism in surface plasmon-enhanced OLEDs is still in process.

  1. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Directory of Open Access Journals (Sweden)

    S.-T. Pham

    2018-02-01

    Full Text Available Magneto-electroluminescence (MEL effects are observed in single-layer organic light-emitting devices (OLEDs comprising only macrocyclic aromatic hydrocarbons (MAHs. The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6. The MEL ratio of the resulting OLED is 1%–2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (−1.5% to −2% in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  2. Electroluminescence enhancement for near-ultraviolet light emitting diodes with graphene/AZO-based current spreading layers

    DEFF Research Database (Denmark)

    Lin, Li; Ou, Yiyu; Zhu, Xiaolong

    LEDs) have attracted significant research interest due to their intensive applications in various areas where indium tin oxide (ITO) is one of the most widely employed transparent conductive materials for NUV LEDs. Compared to ITO, indium-free aluminum-doped zinc oxide (AZO) has similar electrical......Near-ultraviolet light emitting diodes with different aluminum-doped zinc oxide-based current spreading layers were fabricated and electroluminescence (EL) was compared. A 170% EL enhancement was achieved by using a graphene-based interlayer. GaN-based near-ultraviolet light emitting diodes (NUV...... with a new type of current spreading layer (CSL) which combines AZO and a single-layer graphene (SLG) as an effective transparent CSL [1]. In the present work, LEDs with solo AZO CSL in Fig.1(a) and SLG/Ni/AZO-based CSL in Fig.1(b) were both fabricated for EL comparison. Standard mesa fabrication including...

  3. Structural effects of a light emitting copolymer having perylene moieties in the side chain on the electroluminescent characteristics

    International Nuclear Information System (INIS)

    Lee, Chang Ho; Ryu, Seung Hoon; Jang, Hee Dong; Oh, Se Young

    2004-01-01

    We have synthesized a novel side chain light emitting copolymer. The side chain light emitting copolymer has a perylene moiety as an emitting unit and methylmethacrylate (MMA) as a spacer to decrease the concentration quenching of light emitting site in the polymer intrachain. These polymers are very soluble in most organic solvents such as monochlorobenzene, tetrahydrofuran, chloroform and benzene. The single-layered electroluminescent (EL) device consisting of ITO/carrier transporting copolymer and light emitting copolymer/Al was manufactured. The carrier transporting copolymer has triphenylamine moiety as a hole transporting unit and triazine moiety as an electron transporting unit in the polymer side chain. This device exhibits maximum external quantum efficiency when the MMA contents of light emitting copolymer is 30 wt.%. In particular, the device emits more blue light as MMA contents increase

  4. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Science.gov (United States)

    Pham, S.-T.; Ikemoto, K.; Suzuki, K. Z.; Izumi, T.; Taka, H.; Kita, H.; Sato, S.; Isobe, H.; Mizukami, S.

    2018-02-01

    Magneto-electroluminescence (MEL) effects are observed in single-layer organic light-emitting devices (OLEDs) comprising only macrocyclic aromatic hydrocarbons (MAHs). The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6). The MEL ratio of the resulting OLED is 1%-2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (-1.5% to -2%) in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  5. Spectrally resolved hyperfine interactions between polaron and nuclear spins in organic light emitting diodes: Magneto-electroluminescence studies

    Energy Technology Data Exchange (ETDEWEB)

    Crooker, S. A.; Kelley, M. R.; Martinez, N. J. D.; Nie, W.; Mohite, A.; Nayyar, I. H.; Tretiak, S.; Smith, D. L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Liu, F.; Ruden, P. P. [University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2014-10-13

    We use spectrally resolved magneto-electroluminescence (EL) measurements to study the energy dependence of hyperfine interactions between polaron and nuclear spins in organic light-emitting diodes. Using layered devices that generate bright exciplex emission, we show that the increase in EL emission intensity I due to small applied magnetic fields of order 100 mT is markedly larger at the high-energy blue end of the EL spectrum (ΔI/I ∼ 11%) than at the low-energy red end (∼4%). Concurrently, the widths of the magneto-EL curves increase monotonically from blue to red, revealing an increasing hyperfine coupling between polarons and nuclei and directly providing insight into the energy-dependent spatial extent and localization of polarons.

  6. Far-field self-focusing and -defocusing radiation behaviors of the electroluminescent light sources due to negative refraction.

    Science.gov (United States)

    Yin, Yu-Feng; Lin, Yen-Chen; Tsai, Tsung-Han; Shen, Yi-Chun; Huang, Jianjang

    2013-01-15

    In recent years, researchers have demonstrated negative refraction theoretically and experimentally by pumping optical power into photonic crystal (PhC) or waveguide structures. The concept of negative refraction can be used to create a perfect lens that focuses an object smaller than the wavelength. By inserting two-dimensional PhCs into the peripheral of a semiconductor light emitting structure, this study presents an electroluminescent device with negative refraction in the visible wavelength range. This approach produces polarization dependent collimation behavior in far-field radiation patterns. The modal dispersion of negative refraction results in strong group velocity modulation, and self-focusing and -defocusing behaviors are apparent from light extraction. This study further verifies experimental results by using theoretic calculations based on equifrequency contours.

  7. Shell model for REO{sub x} nanoclusters in amorphous SiO{sub 2}: charge trapping and electroluminescence quenching

    Energy Technology Data Exchange (ETDEWEB)

    Tiagulskyi, S.; Nazarov, A.; Tyagulskii, I.; Lysenko, V. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kiev (Ukraine); Rebohle, L.; Lehmann, J.; Skorupa, W. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf e.V., POB 510119, 01314 Dresden (Germany)

    2012-06-15

    In this work charge trapping and electroluminescence (EL) quenching in rare-earth (RE) implanted SiO{sub 2} on Si as a function of injected charge into the dielectric were studied. The blocking of the luminescent REO{sub X} nanoclusters from the hot exciting electrons by negative charge trapping in a defect region (shell) located in the vicinity of the REO{sub X} nanocluster/SiO{sub 2} interface is considered as the main mechanism of EL quenching for small size (up to 10 nm) REO{sub X} nanoclusters. It is suggested that the increase of the nanoclusters size results in disordering of the SiO{sub 2} matrix but in a decrease of local blocking for excitation of the luminescent centers. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure

    International Nuclear Information System (INIS)

    Wu Guoguang; Du Guotong; Gao Fubin; Shen Chunsheng; Li Wancheng; Wang Hui

    2012-01-01

    An n-InN nanodots/p-Si(1 1 1) heterojunction diode was fabricated by plasma-assisted molecular beam epitaxy. The device shows clear rectifying behaviour with a turn-on voltage of approximately 1.2 V at room temperature. The near-infrared electroluminescence (EL) can be observed under forward bias, which covers a wide wavelength range. In comparison with the photoluminescence spectra, the maximum of the EL spectra has a blueshift which is probably due to the size quantization effect of small-sized InN nanodots and their stronger contribution to the EL intensity. On the other hand, there is an obvious enhancement of the less dominant transitions on the short wavelength side of the EL spectra, which may arise from the recombination of the injected holes with the extremely high-density surface electrons of InN nanodots. (paper)

  9. Efficient red organic electroluminescent devices based on trivalent europium complex obtained by designing the device structure with stepwise energy levels

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Liang; Jiang, Yunlong; Cui, Rongzhen; Li, Yanan; Zhao, Xuesen; Deng, Ruiping; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

    2016-02-15

    In this study, we aim to further enhance the electroluminescence (EL) performances of trivalent europium complex Eu(TTA){sub 3}phen (TTA=thenoyltrifluoroacetone and phen=1,10-phenanthroline) by designing the device structure with stepwise energy levels. The widely used bipolar material 2,6-bis(3-(9H-carbazol-9-yl)phenyl)pyridine (26DCzPPy) was chosen as host material, while the doping concentration of Eu(TTA){sub 3}phen was optimized to be 4%. To facilitate the injection and transport of holes, MoO{sub 3} anode modification layer and 4,4′,4′′-Tris(carbazole-9-yl)triphenylamine (TcTa) hole transport layer were inserted in sequence. Efficient pure red emission with suppressed efficiency roll-off was obtained attributed to the reduction of accumulation holes, the broadening of recombination zone, and the improved balance of holes and electrons on Eu(TTA){sub 3}phen molecules. Finally, the device with 3 nm MoO{sub 3} and 5 nm TcTa obtained the highest brightness of 3278 cd/m{sup 2}, current efficiency of 12.45 cd/A, power efficiency of 11.50 lm/W, and external quantum efficiency of 6.60%. Such a device design strategy helps to improve the EL performances of emitters with low-lying energy levels and provides a chance to simplify device fabrication processes. - Highlights: • Electroluminescent performances of europium complex were further improved. • Device structure with stepwise energy levels was designed. • Better carriers' balance was realized by improving the injection and transport of holes. • The selection of bipolar host caused the broadening of recombination zone.

  10. Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

    Directory of Open Access Journals (Sweden)

    Singh A.

    2015-12-01

    Full Text Available In this work, zinc oxide (ZnO nanorods were obtained by a simple chemical precipitation method in the presence of capping agent: polyvinyl pyrrolidone (PVP at room temperature. X-ray diffraction (XRD result indicates that the synthesized undoped ZnO nanorods have hexagonal wurtzite structure without any impurities. It has been observed that the growth direction of the prepared ZnO nanorods is [1 0 1]. XRD analysis revealed that the nanorods have the crystallite size of 49 nm. Crystallite size is calculated by Debye-Scherrer formula and lattice strain is calculated by Williomson-Hall equation. Cell volume, Lorentz factor, Lorentz polarization factor, bond length, texture coefficient, lattice constants and dislocation density have also been studied. We also compared the interplanar spacings and relative peak intensities with their standard values at different angles. The scanning electron microscope (SEM images confirmed the size and shape of these nanorods. It has been found that the diameter of the nanorods ranges from 1.52 μm to 1.61 μm and the length is about 4.89 μm. It has also been observed that at room temperature ultraviolet visible (UV-Vis absorption band is around 355 nm (blue shifted as compared to the bulk. The average particle size has also been calculated by mathematical model of effective mass approximation equation, using UV-Vis absorption peak. Finally, the bandgap has been calculated using UV-absorption peak. Electroluminescence (EL studies show that emission of light is possible at very small threshold voltage and it increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  11. Conjugated Polymer Chains Confined in Vertical Nanocylinders of a Block-Copolymer Film: Preparation, Characterization, and Optoelectronic Function

    KAUST Repository

    Dong, Ban Xuan; Honmou, Yoshihiro; Komiyama, Hideaki; Furumaki, Shu; Iyoda, Tomokazu; Vacha, Martin

    2013-01-01

    Hybrid materials composed of phase-separated block copolymer films and conjugated polymers of the phenylenevinylene family (PPV) are prepared. The PPV chains are embedded in vertical cylinders of nanometer diameter in the block-copolymer films. The cylinders span continuously the whole film thickness of 70 nm. Incorporation of the PPV chains into the one-dimensional cylinders leads to modified photoluminescence spectra and to large absorption anisotropy. The hybrid films show electroluminescence from the PPV chains in a simple light-emitting device at minute doping concentrations, and also exhibit a factor of 19 increase in electron transport efficiency along the single PPV chains. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Conjugated Polymer Chains Confined in Vertical Nanocylinders of a Block-Copolymer Film: Preparation, Characterization, and Optoelectronic Function

    KAUST Repository

    Dong, Ban Xuan

    2013-01-15

    Hybrid materials composed of phase-separated block copolymer films and conjugated polymers of the phenylenevinylene family (PPV) are prepared. The PPV chains are embedded in vertical cylinders of nanometer diameter in the block-copolymer films. The cylinders span continuously the whole film thickness of 70 nm. Incorporation of the PPV chains into the one-dimensional cylinders leads to modified photoluminescence spectra and to large absorption anisotropy. The hybrid films show electroluminescence from the PPV chains in a simple light-emitting device at minute doping concentrations, and also exhibit a factor of 19 increase in electron transport efficiency along the single PPV chains. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq{sub 3}-based organic light-emitting diodes at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T. [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Zhang, Sijie, E-mail: Sijie.zhang@scu.edu.cn, E-mail: w.gillin@qmul.ac.uk [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Gillin, W. P., E-mail: Sijie.zhang@scu.edu.cn, E-mail: w.gillin@qmul.ac.uk [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2016-01-11

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq{sub 3}) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq{sub 3} system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  14. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq3-based organic light-emitting diodes at room temperature

    Science.gov (United States)

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T.; Zhang, Sijie; Gillin, W. P.

    2016-01-01

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq3) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq3 system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  15. Poly[(arylene ethynylene)-alt-(arylene vinylene)]s based on anthanthrone and its derivatives: synthesis and photophysical, electrochemical, electroluminescent, and photovoltaic properties

    Czech Academy of Sciences Publication Activity Database

    John, S. V.; Cimrová, Věra; Ulbricht, C.; Pokorná, Veronika; Růžička, Aleš; Giguére, J.-B.; Lafleur-Lambert, A.; Morin, J.-F.; Iwuoha, E.; Egbe, D. A. M.

    2017-01-01

    Roč. 50, č. 21 (2017), s. 8357-8371 ISSN 0024-9297 R&D Projects: GA ČR(CZ) GA13-26542S Institutional support: RVO:61389013 Keywords : polycyclic aromatic compounds * anthanthrones and anthanthrone derivatives * electroluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 5.835, year: 2016

  16. Simple synthesis, photophysics, and electroluminescent properties of poly[2,7-bis(4-tert-butylstyryl)fluorene-9,9-diyl-alt-alkane-.alpha.,.omega.-diyl

    Czech Academy of Sciences Publication Activity Database

    Mikroyannidis, J. A.; Barberis, V. P.; Výprachtický, Drahomír; Cimrová, Věra

    2007-01-01

    Roč. 45, č. 5 (2007), s. 809-821 ISSN 0887-624X R&D Projects: GA MŠk(CZ) 1M06031; GA AV ČR IAA4050409; GA ČR GA203/04/1372 Institutional research plan: CEZ:AV0Z40500505 Keywords : distyrylfluorene * electrochemical properties * electroluminescence Subject RIV: CD - Macromolecular Chemistry Impact factor: 3.529, year: 2007

  17. Synthesis and electroluminescent properties of blue emitting materials based on arylamine-substituted diphenylvinylbiphenyl derivatives for organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kum Hee; You, Jae Nam; Won, Jiyeon; Lee, Jin Yong [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Seo, Ji Hoon [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

    2011-10-31

    This paper reports the synthesis and electroluminescent properties of a series of blue emitting materials with arylamine and diphenylvinylbiphenyl groups for applications to efficient blue organic light-emitting diodes (OLEDs). All devices exhibited blue electroluminescence with electroluminescent properties that were quite sensitive to the structural features of the dopants in the emitting layers. In particular, the device using dopant 4 exhibited sky-blue emission with a maximum luminance, luminance efficiency, power efficiency, external quantum efficiency and CIE coordinates of 39,000 cd/m{sup 2}, 12.3 cd/A, 7.45 lm/W, 7.71% at 20 mA/cm{sup 2} and (x = 0.17, y = 0.31) at 8 V, respectively. In addition, a blue OLED using dopant 2 with CIE coordinates (x = 0.16, y = 0.18) at 8 V exhibited a luminous efficiency, power efficiency and external quantum efficiency of 4.39 cd/A, 2.46 lm/W and 2.97% at 20 mA/cm{sup 2}, respectively.

  18. Effect of resonant tunneling on electroluminescence in nc-Si/SiO2 multilayers-based p-i-n structure

    International Nuclear Information System (INIS)

    Chen, D.Y.; Wang, Y.Y.; Sun, Y.; He, Y.J.; Zhang, G.

    2015-01-01

    P-i-n structures with SiO 2 /nc-Si/SiO 2 multilayers as intrinsic layer were prepared in conventional plasma enhanced chemical vapor deposition system. Their carrier transport and electroluminescence properties were investigated. Two resonant tunneling related current peaks with current dropping gradually under forward bias were observed in the current voltage curve. Non-uniformity of the interfaces might be responsible for the gradual dropping of the current. Electroluminescence intensity of the device under bias of 7 V which is near the resonant tunneling peak voltage of 7.2 V was weaker than that under 6.5 V. According to the Gaussian fitting results of the spectra, the intensity of the sub-peak of 650 nm originating from recombination of injected electrons and holes was decreased the most. When resonant tunneling conditions are met, it might be that most of the injected electrons participate in resonant tunneling and fewer in Pool–Frenkel tunneling, which is the main carrier transport mechanism, to contribute to electroluminescence intensity. - Highlights: • Two resonant tunneling peaks with current dropping gradually were observed. • The EL intensity of the structure under resonant tunneling peak voltage is weakened. • P–F tunneling is the main transport mechanism besides resonant tunneling

  19. Thin films

    International Nuclear Information System (INIS)

    Strongin, M.; Miller, D.L.

    1976-01-01

    This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

  20. Nuclear films

    International Nuclear Information System (INIS)

    Malone, Peter.

    1985-01-01

    This booklet is a resource for the study of feature films that highlight the theme of nuclear war. It provides basic credits and brief indication of the theme, treatment, quality and particular notable aspects; and a series of questions raised by the film. Seventy feature films and thirty documentaries are examined

  1. X-ray diffractometer configurations for thin film analysis

    International Nuclear Information System (INIS)

    Haase, A.

    1996-01-01

    A presentation of various configurations of focusing Seemann-Bohlin diffractometer, parafocusing Bragg-Brentano diffractometer and parallel beam are demonstrated. Equipped with different thin film attachments a comparison to conventional measurements are given. The application of different detector types like scintillation, gas proportional, electroluminescence (LUX) and solid state are described. Typical instrument set-ups for reflectometry, grazing incidence diffraction, total reflection, high resolution X-ray diffraction are explained. Different elements like slits, soller slits, pinhole collimators, crystal monochromators, monofiber (FOX) and polycapillaries (multifiber lens, Kumakhov lens'), flat or curved multilayer with constant or variable d-spacing, and their combinations are presented. The comparison of different beam conditioners in peak-to-background ratios are given. Wavelength dispersive scans show the energy discrimination possibilities of different beam optics

  2. Electroplex emission of the blend film of PVK and DPVBi

    Science.gov (United States)

    Li, Junming; Xu, Zheng; Zhang, Fujun; Zhao, Suling; Song, Dandan; Zhu, Haina; Song, Jinglu; Wang, Yongsheng; Xu, Xurong

    2010-04-01

    Influences of electric fields on the emission from organic light-emitting diodes (OLEDs) based on poly(N-vinylcarbazole) (PVK) and 4‧-bis(2-2diphenylvinyl)-1,1‧-biphenyl (DPVBi) as the active emission layer are studied. Electroluminescence (EL) spectra of PVK:DPVBi (1:1 w/w) films show one new emission peak locating at 640 nm compared with its photoluminescence (PL) spectra. There may be exists an electroplex emission between the PVK and DPVBi under high electric field strength. The emission intensity of peaking at 640 nm strongly depends on the driving voltage, and the ratio of electroplex emission intensity to exciton emission intensity (Ielectroplex/Iexciton) increases with the increase of driving voltage.

  3. X-ray diffractometer configurations for thin film analysis

    Energy Technology Data Exchange (ETDEWEB)

    Haase, A [Rich. Seifert and Co., Analytical X-ray Systems, Ahrensburg (Germany)

    1996-09-01

    A presentation of various configurations of focusing Seemann-Bohlin diffractometer, parafocusing Bragg-Brentano diffractometer and parallel beam are demonstrated. Equipped with different thin film attachments a comparison to conventional measurements are given. The application of different detector types like scintillation, gas proportional, electroluminescence (LUX) and solid state are described. Typical instrument set-ups for reflectometry, grazing incidence diffraction, total reflection, high resolution X-ray diffraction are explained. Different elements like slits, soller slits, pinhole collimators, crystal monochromators, monofiber (FOX) and polycapillaries (multifiber lens, Kumakhov lens`), flat or curved multilayer with constant or variable d-spacing, and their combinations are presented. The comparison of different beam conditioners in peak-to-background ratios are given. Wavelength dispersive scans show the energy discrimination possibilities of different beam optics.

  4. Experiments on multi-stage light intensification by electro-luminescence; Experiences sur l'intensification de la lumiere en cascade par electroluminescence; Opyty po mnogokaskadnomu svetousileniyu (fotoumnozheniyu) posredstvom ehlektrosvecheniya; Experimentos sobre intensificacion en cascada de la luminosidad por electroluminiscencia

    Energy Technology Data Exchange (ETDEWEB)

    Owaki, K; Nakamura, T [Kobe Kogyo Corporation, Okubo, Akashi, Hyogo (Japan)

    1962-04-15

    In recent years, several papers on the solid-state image-intensifier by the use of electro-luminescent phosphor and photo-conductive materials have appeared as one of the important applications of solid-state electronics. It is convenient and important to use the solid-state intensifier for light amplification. The purpose of this experimental work is to achieve more amplification by cascading the intensifier in multi-stage. This paper first deals with the electrical and optical characteristics of a single-element lightintensifier, then points out briefly the advantage of employing parallel resistance with an electroluminescent- panel to improve its characteristics. Two types of photo-conductive cell were used, one was a sintered CdS cell and the other a CdS photo-sensitive powder, moulded with plastic binder. According to the results obtained on a single-element light-intensifier, two-stage and threestage light intensifiers were made and their characteristics were tested for various parallel resistances. In the three-stage light intensifier, the amplification of about 400 was obtained at 0.3 rlx in-put radiation, and these results suggest the possibility of obtaining more amplification at lower input radiation. The experimental results are believed to be applicable to a solid-state image-intensifier by devising a suitable construction. (author) [French] Au cours des dernieres annees, on a publie plusieurs communications sur le renforcateur d'images a cristal utilisant le phosphore electroluminescent et des matieres photoconductrices; c'est la une des principales applications de l'electronique de l'etat solide. Il est a la fois pratique et avantageux d'utiliser le renforcateur d'images a cristal pour l'amplification de la lumiere. Ces experiences visent a accroitre l'amplification en faisant cascader le renforcateur en plusieurs phases. Apres avoir presente les caracteristiques electriques et optiques d'un photomultiplicateur a un seul element, les auteurs exposent

  5. Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Madhava Rao MV

    2009-01-01

    Full Text Available Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene (DBPPV. The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt% before annealing (1.78 cd/A and after annealing (2.45 cd/A having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode.

  6. Highly efficient electroluminescence from a solution-processable thermally activated delayed fluorescence emitter

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Yoshimasa; Kubo, Shosei; Suzuki, Katsuaki; Kaji, Hironori, E-mail: kaji@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Shizu, Katsuyuki [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Tanaka, Hiroyuki [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Adachi, Chihaya [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan)

    2015-11-02

    We developed a thermally activated delayed fluorescence (TADF) emitter, 2,4,6-tris(4-(9,9-dimethylacridan-10-yl)phenyl)-1,3,5-triazine (3ACR-TRZ), suitable for use in solution-processed organic light-emitting diodes (OLEDs). When doped into 4,4′-bis(carbazol-9-yl)biphenyl (CBP) host at 16 wt. %, 3ACR-TRZ showed a high photoluminescence quantum yield of 98%. Transient photoluminescence decay measurements of the 16 wt. % 3ACR-TRZ:CBP film confirmed that 3ACR-TRZ exhibits efficient TADF with a triplet-to-light conversion efficiency of 96%. This high conversion efficiency makes 3ACR-TRZ attractive as an emitting dopant in OLEDs. Using 3ACR-TRZ as an emitter, we fabricated a solution-processed OLED exhibiting a maximum external quantum efficiency of 18.6%.

  7. A discotic triphenylene dimer as organic hole transporting material for electroluminescence devices

    International Nuclear Information System (INIS)

    Mao Huaxiang; He Zhiqun; Wang Junling; Zhang Chunxiu; Xie, Ping; Zhang Rongben

    2007-01-01

    A triphenylene dimer, an intermediate between a discotic triphenylene molecule and the macromolecule, had been prepared by linking together two triphenylene units via phenylene carbamate linkages, which was formed through a reaction between one 1,4-phenylene diisocyanate and two hydroxyl end groups on flexible substituents of triphenylenes. The dimer exhibited good film-forming property. Its temperature-dependent phase transitions were investigated using differential scanning calorimetry and polarized optical microscopy. Room temperature microstructure of the dimer was analyzed by X-ray diffraction. Charge mobility of the triphenylene dimer was also measured. Our preliminary result using the materials in a sandwich light-emitting device is reported here. It demonstrates that the triphenylene dimer is a promising candidate as a hole transporting material

  8. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-01-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  9. Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light-Emitting Diodes.

    Science.gov (United States)

    Wang, Haoran; Li, Xiaomin; Yuan, Mingjian; Yang, Xuyong

    2018-04-01

    Despite the recent advances in the performance of perovskite light-emitting diodes (PeLEDs), the effects of water on the perovskite emissive layer and its electroluminescence are still unclear, even though it has been previously demonstrated that moisture has a significant impact on the quality of perovskite films in the fabrication process of perovskite solar cells and is a prerequisite for obtaining high-performance PeLEDs. Here, the effects of postmoisture on the luminescent CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite films are systematically investigated. It is found that postmoisture treatment can efficiently control the morphology and growth of perovskite films and only a fast moisture exposure at a 60% high relative humidity results in significantly improved crystallinity, carrier lifetime, and photoluminescence quantum yield of perovskite films. With the optimized moisture-treated perovskite films, a high-performance PeLED is fabricated, exhibiting a maximum current efficiency of 20.4 cd A -1 , which is an almost 20-fold enhancement when compared with perovskite films without moisture treatment. The results provide valuable insights into the moisture-assisted growth of luminescent perovskite films and will aid in the development of high-performance perovskite light-emitting devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Enhanced phosphorescence and electroluminescence in triplet emitters by doping gold into cadmium selenide/zinc sulfide nanoparticles

    International Nuclear Information System (INIS)

    Liu, H.-W.; Laskar, Inamur R.; Huang, C.-P.; Cheng, J.-A.; Cheng, S.-S.; Luo, L.-Y.; Wang, H.-R.; Chen, T.-M.

    2005-01-01

    Gold-cadmium selenide/zinc sulfide (Au-CdSe/ZnS) nanocomposites (NCs) were synthesized and characterized by transmission electron microscopy (TEM), energy dispersive X-ray (EDX) analysis, ultraviolet-visible (UV-visible) absorption and photoluminescence (PL) emission spectroscopy. The PL intensity in the Au-CdSe/ZnS NCs system was found to be much greater than that of CdSe/ZnS nanoparticles (NPs) alone, because of the surface-enhanced Raman scattering of Au NPs. Adding Au-CdSe/ZnS NCs to the cyclometalated iridium(III) complex (Ir-complex) greatly enhanced the PL intensity of a triplet emitter. Three double-layered electroluminescence (EL) devices were fabricated where the emitting zone contains the definite mixture of Ir-complex and the NCs [molar concentration of Ir-complex/NCs = 1:0 (Blank, D-1), 1:1 (D-2) and 1:3 (D-3)] and the device D-2 exhibited optimal EL performances

  11. Design and development of low-power driven hybrid electroluminescent lamp from carbon nanotube embedded phosphor material

    International Nuclear Information System (INIS)

    Yadav, Deepika; Mishra, Savvi; Shanker, Virendra; Haranath, D.

    2013-01-01

    Highlights: •We are first to report CNT embedded ZnS:Mn hybrid EL system. •Achieved efficient orange-red EL emission at low operating voltages ( AC ). •Facile technique to induce conductive paths inside the ZnS particle to trigger EL. •Detailed electrical characterization of EL lamp is presented. -- Abstract: We present a novel methodology to design a hybrid electroluminescent (EL) lamp by embedding carbon nanotubes (CNTs) inside the ZnS:Mn phosphor particles by conventional solid state diffusion technique. By doing so, the phosphor particles exhibited increase in EL brightness and efficiency at low operating voltages ( AC ). Interestingly, shorter the length of CNTs used, greater was the field enhancement effect and lower was the operating voltages to glow the EL lamps. The role of CNTs have been identified to form conductive paths inside the ZnS particle thereby triggering EL due to electron injection to luminescent centers (Mn 2+ ) at nominal voltages. In addition, a detailed electrical characterization of the novel EL lamp along with its spectral energy distribution studies are presented

  12. Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

    Science.gov (United States)

    Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

    2000-09-01

    A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

  13. Synthesis, characterization and electroluminescence of two highly-twisted non-doped blue light-emitting materials

    Science.gov (United States)

    Gong, Xiaojie; Pan, Yipeng; Xie, Xiang; Tong, Tong; Chen, Runfeng; Gao, Deqing

    2018-04-01

    Two pyrene derivatives, substituted with 2-methylnaphthalene units on 1,3-position and 1,6-position of pyrene backbones, were designed and synthesized. DFT calculation confirmed that the two molecules were highly twisted and the dihedral angles between pyrene backbone and naphthalene unit were over 80°, being attributed to the steric hindrance of ortho-methyl group and the substitution position of pyrene itself. As a result, the intermolecular aggregation was greatly inhibited in the solid state, being beneficial for suppressing the fluorescence quenching. By analyzing the optical and thermal properties, it was found that the π-π conjugation extension could be adjusted and a balance for high fluorescent efficiency and avoiding quenching at the same time could be reached, which may guide the molecular design in the future. The electroluminescence properties of the non-doped devices were enhanced with the double hole-transporting layers by optimizing the energy level matching. The stable blue EL emission, with the Commission Internationaled'Eclairage (CIEx,y) color coordinates of (0.15, 0.13) and (0.15, 0.11) at 7, 8, 9 and 10 V respectively, was obtained.

  14. Magnetic field enhanced electroluminescence in organic light emitting diodes based on electron donor-acceptor exciplex blends

    Science.gov (United States)

    Baniya, Sangita; Basel, Tek; Sun, Dali; McLaughlin, Ryan; Vardeny, Zeev Valy

    2016-03-01

    A useful process for light harvesting from injected electron-hole pairs in organic light emitting diodes (OLED) is the transfer from triplet excitons (T) to singlet excitons (S) via reverse intersystem crossing (RISC). This process adds a delayed electro-luminescence (EL) emission component that is known as thermally activated delayed fluorescence (TADF). We have studied electron donor (D)/acceptor(A) blends that form an exciplex manifold in which the energy difference, ΔEST between the lowest singlet (S1) and triplet (T1) levels is relatively small (exciplex blend is enhanced up to 40% by applying a relatively weak magnetic field of 50 mT at ambient. Moreover the MEL response is activated with activation energy similar that of the EL emission. This suggests that the large magneto-EL originates from an additional spin-mixing channel between singlet and triplet states of the generated exciplexes, which is due to TADF. We will report on the MEL dependencies on the temperature, bias voltage, and D-A materials for optimum OLED performance. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  15. Interfacial exciplex electroluminescence between diamine derivatives with starburst molecular structure and tris(acetylacetonato)-(mono-phenothroline) thulium

    Energy Technology Data Exchange (ETDEWEB)

    He Hong [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Li Wenlian [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)], E-mail: wllioel@yahoo.com.cn; Su Zisheng; Chu Bei; Bi Defeng; Chen Yiren; Wang Dan; Su Wenming; Li Bin [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2009-02-20

    The authors demonstrate the interfacial exciplex electroluminescence (EL) between tris(acetylacetonato)-(mono-phenothroline) thulium [Tm(AcA){sub 3}phen] and two diamine derivatives with starburst molecular structure- 4,4',4''-tris[2-naphthyl(phenyl)amino]triphenylamine (2-TNATA) and 4,4',4''-tris[3-methyl-pheny(phenyl)-amino]triphenyl-amine (m-MTDATA), both of which have the same ionization potential (IP) (approximately 5.1 eV). When the Tm-complex and the two diamine derivatives are respectively used as the electron accepter and donors, the two EL devices exhibit different exciplex emissions, which verifies our previously reported opinion regarding the effect of the different substitutes on exciplex emission [W.M. Su, W.L. Li, Q. Xin, Z.S. Su, B. Chu, D.F. Bi, H. He, J.H. Niu, Appl. Phys. Lett. 91 (2007) 043508]. When the mixture of the two diamine derivatives is used as a donor, a white EL device with the Commission International de l'Eclairage (CIE) coordinates of (0.277, 0.323) is achieved. The exciplex formation mechanisms of the devices with the two different donors are discussed.

  16. High performance organic integrated device with ultraviolet photodetective and electroluminescent properties consisting of a charge-transfer-featured naphthalimide derivative

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hanyu; Wang, Xu; Yu, Junsheng, E-mail: luzhiyun@scu.edu.cn, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhou, Jie; Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn, E-mail: jsyu@uestc.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2014-08-11

    A high performance organic integrated device (OID) with ultraviolet photodetective and electroluminescent (EL) properties was fabricated by using a charge-transfer-featured naphthalimide derivative of 6-(3,5-bis-[9-(4-t-butylphenyl)-9H-carbazol-3-yl]-phenoxy)-2- (4-t-butylphenyl)-benzo[de]isoquinoline-1,3-dione (CzPhONI) as the active layer. The results showed that the OID had a high detectivity of 1.5 × 10{sup 11} Jones at −3 V under the UV-350 nm illumination with an intensity of 0.6 mW/cm{sup 2}, and yielded an exciplex EL light emission with a maximum brightness of 1437 cd/m{sup 2}. Based on the energy band diagram, both the charge transfer feature of CzPhONI and matched energy level alignment were responsible for the dual ultraviolet photodetective and EL functions of OID.

  17. Interfacial exciplex electroluminescence between diamine derivatives with starburst molecular structure and tris(acetylacetonato)-(mono-phenothroline) thulium

    International Nuclear Information System (INIS)

    He Hong; Li Wenlian; Su Zisheng; Chu Bei; Bi Defeng; Chen Yiren; Wang Dan; Su Wenming; Li Bin

    2009-01-01

    The authors demonstrate the interfacial exciplex electroluminescence (EL) between tris(acetylacetonato)-(mono-phenothroline) thulium [Tm(AcA) 3 phen] and two diamine derivatives with starburst molecular structure- 4,4',4''-tris[2-naphthyl(phenyl)amino]triphenylamine (2-TNATA) and 4,4',4''-tris[3-methyl-pheny(phenyl)-amino]triphenyl-amine (m-MTDATA), both of which have the same ionization potential (IP) (approximately 5.1 eV). When the Tm-complex and the two diamine derivatives are respectively used as the electron accepter and donors, the two EL devices exhibit different exciplex emissions, which verifies our previously reported opinion regarding the effect of the different substitutes on exciplex emission [W.M. Su, W.L. Li, Q. Xin, Z.S. Su, B. Chu, D.F. Bi, H. He, J.H. Niu, Appl. Phys. Lett. 91 (2007) 043508]. When the mixture of the two diamine derivatives is used as a donor, a white EL device with the Commission International de l'Eclairage (CIE) coordinates of (0.277, 0.323) is achieved. The exciplex formation mechanisms of the devices with the two different donors are discussed

  18. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    Science.gov (United States)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  19. Enabling Lambertian-Like Warm White Organic Light-Emitting Diodes with a Yellow Phosphor Embedded Flexible Film

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Chen

    2014-01-01

    Full Text Available We demonstrate in this report a new constructive method of fabricating white organic light-emitting devices (OLEDs with a flexible plastic film embedded with yellow phosphor. The flexible film is composed of polydimethylsiloxane (PDMS and fabricated by using spin coating followed by peeling technology. From the results, the resultant electroluminescent spectrum shows the white OLED to have chromatic coordinates of 0.38 and 0.54 and correlated color temperature of 4200 K. The warm white OLED exhibits the yield of 10.3 cd/A and the luminous power efficiency of 5.4 lm/W at a luminance of 1000 cd/m2. A desirable Lambertian-like far-field pattern is detected from the white OLEDs with the yellow phosphor containing PDMS film. This method is simple, reproducible, and cost-effective, proving to be a highly feasible approach to realize white OLED.

  20. Film processing

    International Nuclear Information System (INIS)

    Abdul Nassir Ibrahim; Azali Muhammad; Ab. Razak Hamzah; Abd. Aziz Mohamed; Mohamad Pauzi Ismail

    2008-01-01

    The processing was made not only to show what are in the film but also to produce radiograph with high quality where the information gathered really presented level of the quality of the object inspected. Besides that, good procedure will make the film with good quality can keep the film in long time for reference. Here, more detailed on how the dark room functioned and its design. So, the good procedure while processed the film will be discussed detailed in this chapter from entering the dark room to exit from there.

  1. Demens Film

    DEFF Research Database (Denmark)

    Jensen, Anders Møller

    2012-01-01

    Vi vil skabe film til mennesker med demens – ikke film om demens sygdommen eller beretninger om livet og hverdagen med en kronisk lidelse. Filmene skal medvirke til at frembringe en behagelig stemning omkring og hos mennesker med demens, så hverdagen bliver så tryg som mulig. Filmene skal samtidig...... var at afgrænse og prioritere projektet, samt komme med anbefalinger omkring hvad der er vigtigt, i forbindelse med produktion af film målrettet mennesker med demens. Resultat af ekspertgruppen sammenfattes i denne rapport. Projektet gennemføres som et samarbejde mellem Retrospect Film...

  2. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  3. Into films

    DEFF Research Database (Denmark)

    Tan, Ed S.; Doicaru, Miruna M.; Hakemulder, Frank

    2017-01-01

    Most film viewers know the experience of being deeply absorbed in the story of a popular film. It seems that at such moments they lose awareness of watching a movie. And yet it is highly unlikely that they completely ignore the fact that they watch a narrative and technological construction. Perh...

  4. 3D Printing of NinjaFlex Filament onto PEDOT:PSS-Coated Textile Fabrics for Electroluminescence Applications

    Science.gov (United States)

    Tadesse, Melkie Getnet; Dumitrescu, Delia; Loghin, Carmen; Chen, Yan; Wang, Lichuan; Nierstrasz, Vincent

    2018-03-01

    Electroluminescence (EL) is the property of a semiconductor material pertaining to emitting light in response to an electrical current or a strong electric field. The purpose of this paper is to develop a flexible and lightweight EL device. Thermogravimetric analysis (TGA) was conducted to observe the thermal degradation behavior of NinjaFlex. Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid)—PEDOT:PSS—with ethylene glycol (EG) was coated onto polyester fabric where NinjaFlex was placed onto the coated fabric using three-dimensional (3D) printing and phosphor paste, and BendLay filaments were subsequently coated via 3D printing. Adhesion strength and flexibility of the 3D-printed NinjaFlex on textile fabrics were investigated. The TGA results of the NinjaFlex depict no weight loss up to 150°C and that the NinjaFlex was highly conductive with a surface resistance value of 8.5 ohms/sq.; the coated fabric exhibited a uniform surface appearance as measured and observed by using four-probe measurements and scanning electron microscopy, respectively, at 60% PEDOT:PSS. The results of the adhesion test showed that peel strengths of 4160 N/m and 3840 N/m were recorded for polyester and cotton specimens, respectively. No weight loss was recorded following three washing cycles of NinjaFlex. The bending lengths were increased by only a factor of 0.082 and 0.577 for polyester and cotton samples at 0.1-mm thickness, respectively; this remains sufficiently flexible to be integrated into textiles. The prototype device emitted light with a 12-V alternating current power supply.

  5. Influence of the polymer concentration on the electroluminescence of ZnO nanorod/polymer hybrid light emitting diodes

    Science.gov (United States)

    Zaman, Saima; Zainelabdin, Ahmed; Amin, Gul; Nur, Omer; Willander, Magnus

    2012-09-01

    The effects of the polymer concentration on the performance of hybrid light emitting diodes (LEDs) based on zinc oxide nanorods (ZnO NRs) and poly(9,9-dioctylfluorene) (PFO) were investigated. Various characterization techniques were applied to study the performance of the PFO/ZnO NR hybrid LEDs fabricated with various PFO concentrations. The fabricated hybrid LEDs demonstrated stable rectifying diode behavior, and it was observed that the turn-on voltage of the LEDs is concentration dependent. The measured room temperature electroluminescence (EL) showed that the PFO concentration plays a critical role in the emission spectra of the hybrid LEDs. At lower PFO concentrations of 2-6 mg/ml, the EL spectra are dominated by blue emission. However, by increasing the concentration to more than 8 mg/ml, the blue emission was completely suppressed while the green emission was dominant. This EL behavior was explained by a double trap system of excitons that were trapped in the β-phase and/or in the fluorenone defects in the PFO side. The effects of current injection on the hybrid LEDs and on the EL emission were also investigated. Under a high injection current, a new blue peak was observed in the EL spectrum, which was correlated to the creation of a new chemical species on the PFO chain. The green emission peak was also enhanced with increasing injection current because of the fluorenone defects. These results indicate that the emission spectra of the hybrid LEDs can be tuned by using different polymer concentrations and by varying the current injected into the device.

  6. Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

    Science.gov (United States)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

    2008-11-01

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  7. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Cremona, M.; Achete, C. A.

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  8. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  9. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    International Nuclear Information System (INIS)

    Reyes, R; Cremona, M; Achete, C A

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq 3 ) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq 3 /Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  10. Demens Film

    DEFF Research Database (Denmark)

    Ridder, Hanne Mette Ochsner

    2012-01-01

    I forbindelse med opstarten af Demens Film projektet har der været nedsat en ekspertgruppe, som er kommet med en række anbefalinger omkring film til mennesker med demens. Anbefalingerne skal bruges i de næste faser af projektet. Deltagerne i ekspertgruppen var sammensat af en bred gruppe...... fagpersoner inde for forskellige fagområder. Læs mere om gruppens anbefalinger og sammensætning af ekspertgruppen i den kort rapport som er offentlig tilgængelig. Læs Ekspertgruppe anbefalingerne til Demens Film projekt....

  11. Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

    International Nuclear Information System (INIS)

    Xu Jianhua; Yang Yajie; Yu Junsheng; Jiang Yadong

    2009-01-01

    We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.

  12. Ultraviolet electroluminescence from Au/MgO/MgxZn1−xO heterojunction diodes and the observation of Zn-rich cluster emission

    International Nuclear Information System (INIS)

    Liu, C.Y.; Xu, H.Y.; Sun, Y.; Zhang, C.; Ma, J.G.; Liu, Y.C.

    2014-01-01

    In this work, ultraviolet (UV) electroluminescence (EL) is achieved from Au/MgO/Mg x Zn 1−x O heterojunction diodes. The EL mechanism and laser forming process are discussed based on the energy band diagram, impact-ionization process and disordered optical structure. For ZnO and low Mg-content MgZnO devices, their EL spectra show single near-band-edge (NBE) emission. While in high Mg-content MgZnO devices, the emission from self-formed Zn-rich MgZnO clusters is observed and also contribute to the UV EL band. These Zn-rich clusters can act as thermally-stable luminescence centers, suggesting a promising route for developing MgZnO-based UV light-emitting devices. -- Highlights: • A series of Au/MgO/Mg x Zn 1−x O heterojunction diodes with multiple Mg compositions are fabricated and ultraviolet electroluminescence is achieved. • EL mechanism and laser forming process are discussed based on energy band diagram, impact-ionization process and disordered optical structure. • The transition from spontaneous to stimulated emission is observed in these heterojunctions, and the lasing mode is random laser. • In high Mg-content MgZnO devices, the emission from self-formed Zn-rich clusters is observed, which are thermally stable luminescence centers

  13. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  14. Polymer films

    Science.gov (United States)

    Granick, Steve; Sukhishvili, Svetlana A.

    2004-05-25

    A film contains a first polymer having a plurality of hydrogen bond donating moieties, and a second polymer having a plurality of hydrogen bond accepting moieties. The second polymer is hydrogen bonded to the first polymer.

  15. In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

    Science.gov (United States)

    Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

    2017-04-25

    Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

  16. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    Energy Technology Data Exchange (ETDEWEB)

    Calciati, Marco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); Goano, Michele, E-mail: michele.goano@polito.it; Bertazzi, Francesco [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); IEIIT-CNR, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico [Dipartimento di Ingegneria dell' Informazione, Università di Padova, Via Gradenigo 6/B, 35131 Padova (Italy); Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary' s Street, 02215 Boston, MA (United States); Verzellesi, Giovanni [Dipartimento di Scienze e Metodi dell' Ingegneria, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-06-15

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary

  17. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    Directory of Open Access Journals (Sweden)

    Marco Calciati

    2014-06-01

    Full Text Available Electroluminescence (EL characterization of InGaN/GaN light-emitting diodes (LEDs, coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs. First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i the approximations in the transport description through the multi-quantum-well active region, (ii the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10−30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary

  18. Wavelength Dispersive X-ray Fluorescence Spectrometry for the Analysis of Organic Polymer Film

    International Nuclear Information System (INIS)

    Choi, Yong Suk; Park, Yong Joon; Kim, Jong Yun

    2008-01-01

    Recently, many studies have been focused on the thin films because there are numerous industrial processes relevant to thin films such as fuel cells, sensors, lubricants, coatings, and so on. Physical and chemical properties of solid surface have been modified by ultra-thin coatings such as Langmuir-Blodgett (LB) method with a variety of types of organic functional materials for the specific purposes in many applications. In addition, the layer-by-layer technique using polyelectrolyte films are now of interest as biosensors, electrochromic and electroluminescent devices, etc. In general, several methods such as X-ray or neutron reflectivity, and quartz crystal microbalance (QCM) have been utilized for the thin film analysis. These optical techniques can measure the film thicknesses up to hundreds of nanometers while X-ray photoelectron spectroscopy is widely used to study a few nanometers thick films. Other methods such as X-ray Photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and atom force microscopy (AFM) have also been used in the film analysis in spite of some disadvantages for each method. X-ray fluorescence (XRF) has long been used as a rapid and simple analytical tool for the analysis of elemental composition of materials. XRF technique is suitable for on-line or in-line real-time monitoring because it is a non-destructive and rapid analysis with good precision and good accuracy at low cost. The aim of this work is to develop a new analytical technique for the quantitative analysis of polymer film on metal substrate. In the present study, Compton peak profile was investigated under different experimental conditions by using wavelength-dispersive XRF (WD-XRF). Compared to energy-dispersive XRF (ED-XRF), WD-XRF is more adequate in an accurate quantitative analysis of thin organic film

  19. PL and EL characterizations of ZnO:Eu3+, Li+ films derived by sol-gel process

    International Nuclear Information System (INIS)

    Xue Daoqi; Zhang Junying; Yang Chun; Wang Tianmin

    2008-01-01

    ZnO:Eu 3+ , Li + films prepared by the dip-coating method were characterized by photoluminescence (PL) and electroluminescence (EL). When the ZnO:Eu 3+ , Li + films were excited using UV light with energy corresponding to the band-to-band excitation of the host matrix, the PL spectra showed emissions from both ZnO and Eu 3+ ions, while their EL spectra showed emissions only from Eu 3+ ions, and no emission from ZnO could be detected. It is found that the EL emission intensity B is dependent on the applied voltage, B=B o exp(-bV -1/2 ). With increasing frequency, the EL intensity dramatically increases at lower frequencies ( 1000 Hz)

  20. Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs.sub.1-x./sub.Sb.sub.x./sub./AlSb deep quantum well

    Czech Academy of Sciences Publication Activity Database

    Mikhailova, M. P.; Ivanov, E.V.; Danilov, L.V.; Petukhov, A.A.; Kalinina, K.V.; Slobozhanyuk, S.I.; Zegrya, G.G.; Stoyanov, N. D.; Yakovlev, Yu. P.; Hospodková, Alice; Pangrác, Jiří; Oswald, Jiří; Zíková, Markéta; Hulicius, Eduard

    2014-01-01

    Roč. 115, č. 22 (2014), "223102-1"-"223102-5" ISSN 0021-8979 R&D Projects: GA ČR GA13-15286S Institutional support: RVO:68378271 Keywords : MOVPE * GaSb * InAs * electroluminescence * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  1. New copolymers with thieno[3,2-b]thiophene or dithieno[3,2-b:2',3'-d]thiophene units possessing electron-withdrawing 4-cyanophenyl groups: synthesis and photophysical, electrochemical, and electroluminescent properties

    Czech Academy of Sciences Publication Activity Database

    Výprachtický, Drahomír; Demirtas, I.; Dzhabarov, Vagif; Pokorná, Veronika; Ertas, E.; Ozturk, T.; Cimrová, Věra

    2017-01-01

    Roč. 55, č. 16 (2017), s. 2629-2638 ISSN 0887-624X R&D Projects: GA ČR(CZ) GA13-26542S Institutional support: RVO:61389013 Keywords : conjugated polymers * electrochemistry * electroluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.952, year: 2016

  2. Science Fiction on Film.

    Science.gov (United States)

    Burmester, David

    1985-01-01

    Reviews science fiction films used in a science fiction class. Discusses feature films, short science fiction films, short story adaptations, original science fiction pieces and factual science films that enrich literature. (EL)

  3. Highly transparent and rollable PVA-co-PE nanofibers synergistically reinforced with epoxy film for flexible electronic devices.

    Science.gov (United States)

    Xiong, Bing; Zhong, Weibing; Zhu, Qing; Liu, Ke; Li, Mufang; Sun, Gang; Wang, Dong

    2017-12-14

    The development of electronics towards a more functions-integrated, flexible and stretchable direction requires mechanically flexible substrates with high thermal and dimensional stability and optical transparency. Herein, rolls of an optically transparent PVA-co-PE nanofibrous membrane/epoxy composite with synergistically enhanced thermal stability, very low CTE, and outstanding mechanical properties are reported. The nanoscale size, the unique inter-stack structure, and the strong interfacial interactions between the PVA-co-PE nanofibers and the epoxy contribute to the synergistic effects. Because of the match between the refractive index (RI) of the PVA-co-PE nanofibers and the epoxy matrix, the visible light transmittance of nanocomposite film could be as high as 85% and the composite film was still optically transparent with a nanofiber loading content of up to 61.7 wt%. The break strength and compliance matrix of the composite film with a high fiber loading of 61.7 wt% increased by 2.3 times of that of the neat epoxy film and exceeded 3000 m 2 N -1 , respectively. PVA-co-PE nanofibers have a very low CTE value (3.634 × 10 -6 K -1 ) and could be applicable as a reinforcement to reduce the thermal expansion of epoxy. Furthermore, we developed a flexible alternating current electroluminescent (ACEL) device based on the transparent composite film and the experimental results showed that the transparent composite film could serve as substrate for flexible electronic devices. In addition, their electrical and optical properties were evaluated.

  4. Nonlinear optical properties of Nd3+-Li+ co-doped ZnS-PVP thin films

    Science.gov (United States)

    Talwatkar, S. S.; Sunatkari, A. L.; Tamgadge, Y. S.; Muley, G. G.

    2018-04-01

    The nonlinear optical properties of Nd3+-Li+ co-doped ZnS-PVP nanocomposite were studied using a continuous wave (CW) He-Ne laser (λ = 632.8 nm)by z-scan technique. The nonlinear refractive index (n2), absorption coefficient (β) and third order nonlinear susceptibility (χ(3)) of PVP thin films embedded with Nd3+-Li+ co-doped ZnS NPs was found in the order of 10-7 cm2/W, 10-6 cm/W and 10-7 esu respectively. The nonlinearity found increasing with Nd3+-Li+ co-dopant concentration. Based on the results, it is proposed that this material is a new class of luminescent material suitable in optoelectronics devices application, especially in light-emitting devices, electroluminescent devices, display devices, etc.

  5. Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Tiancheng; Lu, Ming; Yang, Kui; Xiao, Pengfei; Wang, Rong, E-mail: wangr@bnu.edu.cn

    2014-09-15

    Direct injection-enhanced annealing of defects in a GaInP top cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.8 MeV electrons with a fluence of 1 × 10{sup 15} cm{sup −2} has been observed and analyzed using electroluminescence (EL) spectra. Minority-carrier injection under forward bias conditions is observed to enhance defect annealing in the GaInP top cell, and recovery of the EL intensity of the GaInP top cell was observed even at room temperature. Moreover, the injection-enhanced defect annealing rates obey a simple Arrhenius law; therefore, the annealing activation energy was determined and is equal to 0.51 eV. Lastly, the H2 defect has been identified as the primary non-radiative recombination center based on a comparison of the annealing activation energies.

  6. Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes

    International Nuclear Information System (INIS)

    Yang, Yanqin; Li, Songzhan; Liu, Feng; Zhang, Nangang; Liu, Kan; Wang, Shengxiang; Fang, Guojia

    2017-01-01

    Light-emitting diodes based on p-SnO 2 /i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO 2 /i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

  7. 1.54 μm Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode

    International Nuclear Information System (INIS)

    Zhao, W Q; Wang, P F; Ran, G Z; Ma, G L; Zhang, B R; Liu, W M; Wu, S K; Dai, L; Qin, G G

    2006-01-01

    By doping an erbium complex, erbium (III) 2, 4-pentanedionate (Er(acac) 3 ), into the ALQ layer, we fabricate a series of infrared emission organic light emitting diodes (OLED) with structures of p-Si/SiO 2 /NPB/ALQ/ ALQ:Er(acac) 3 /ALQ/Sm/Au, where p-Si is the anode and Sm/Au is the cathode. The 1.54 μm emission from Er 3+ is observed. The impact of doping level of Er(acac) 3 in ALQ on 1.54 μm electroluminescence (EL) intensity is studied, and the best mass ratio of Er(acac) 3 to ALQ is found at 1:60. A competitive EL mechanism from the ALQ and Er(acac) 3 is found and the Er 3+ ions excitations are attributed to energy transfer from the ligands to Er ions

  8. Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

    Science.gov (United States)

    Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

    2013-01-23

    Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

  9. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  10. Synthesis and Electroluminescent Properties of Bis(3H-1,2,3-triazolo-[4,5-b]pyridine-3-olzinc Zn(TAP2

    Directory of Open Access Journals (Sweden)

    Trinh Dac Hoanh

    2012-01-01

    Full Text Available A new light-emissive material, bis(3H-1,2,3-triazolo-[4,5-b]pyridine-3-olzinc (Zn(TAP2, has been synthesized and characterized by FT-NMR, FT-IR, UV-Vis, and elemental analysis. The photoluminescence (PL of Zn(TAP2 was measured from the DMF solution at 460 nm. The HOMO (6.5 eV and LUMO (2.8 eV energy levels of Zn(TAP2 were estimated from the measurement of cyclic voltammetry. The devices with structures of ITO/NPB/Zn(TAP2/LiF/Al and ITO/NPB/Zn(TAP2/Alq3/LiF/Al were constructed to investigate their electroluminescent (EL performance. Zn (TAP2 is supposed to be a good emitting material in the EL device.

  11. Modulation of the electroluminescence emission from ZnO/Si NCs/p-Si light-emitting devices via pulsed excitation

    Science.gov (United States)

    López-Vidrier, J.; Gutsch, S.; Blázquez, O.; Hiller, D.; Laube, J.; Kaur, R.; Hernández, S.; Garrido, B.; Zacharias, M.

    2017-05-01

    In this work, the electroluminescence (EL) emission of zinc oxide (ZnO)/Si nanocrystals (NCs)-based light-emitting devices was studied under pulsed electrical excitation. Both Si NCs and deep-level ZnO defects were found to contribute to the observed EL. Symmetric square voltage pulses (50-μs period) were found to notably enhance EL emission by about one order of magnitude. In addition, the control of the pulse parameters (accumulation and inversion times) was found to modify the emission lineshape, long inversion times (i.e., short accumulation times) suppressing ZnO defects contribution. The EL results were discussed in terms of the recombination dynamics taking place within the ZnO/Si NCs heterostructure, suggesting the excitation mechanism of the luminescent centers via a combination of electron impact, bipolar injection, and sequential carrier injection within their respective conduction regimes.

  12. Effect of interface voids on electroluminescence colors for ZnO microdisk/p-GaN heterojunction light-emitting diodes

    Science.gov (United States)

    Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin; Jeong, Junseok; Kim, Jong Chan; Kim, Yong-Jin; Jeong, Hu Young; Hong, Young Joon

    2017-10-01

    This study investigates the influence of voids on the electroluminescence (EL) emission color of ZnO microdisk/p-GaN heterojunction light-emitting diodes (LEDs). For this study, position-controlled microdisk arrays were fabricated on patterned p-GaN via wet chemical epitaxy of ZnO, and specifically, the use of trisodium citrate dihydrate (TCD) yielded high-density voids at the bottom of the microdisk. Greenish yellow or whitish blue EL was emitted from the microdisk LEDs formed with or without TCD, respectively, at reverse-bias voltages. Such different EL colors were found to be responsible for the relative EL intensity ratio between indigo and yellow emission peaks, which were originated from radiative recombination at p-GaN and ZnO, respectively. The relative EL intensity between dichromatic emissions is discussed in terms of (i) junction edge effect provoked by interfacial voids and (ii) electron tunneling probability depending on the depletion layer geometry.

  13. Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ye Tengling; Chen Zhenyu; Chen Jiangshan [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge, E-mail: mdg1014@ciac.jl.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)

    2010-11-15

    We have measured the temperature dependence of the steady-state current-voltage (I-V) characteristics and the transient electroluminescent (EL) characteristics in 4-(dicyanomethylene)-2-t-propyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polyfluorene devices to study the charge-trapping effect of DCJTB fluorescent dye on luminescence processes and on device performance. Physical and chemical analyses prove that DCJTB molecules serve both as electron and hole traps, and the charge-trapping effect is more sensitive against the electrons than the holes at the low dopant concentration. This intrinsic characteristic causes the electron to be injected into the emitting layer first and then trapped in the bulk, producing a strong effect on device performance.

  14. Bidirectional electroluminescence from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yanqin [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Li, Songzhan, E-mail: liszhan@whu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Feng; Zhang, Nangang; Liu, Kan [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Wang, Shengxiang, E-mail: sxwang@wtu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Fang, Guojia [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

    2017-06-15

    Light-emitting diodes based on p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

  15. Efficient blue-green and green electroluminescent devices obtained by doping iridium complexes into hole-block material as supplementary light-emitting layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Liang [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zheng, Youxuan, E-mail: yxzheng@mail.nju.edu.cn [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Deng, Ruiping; Feng, Jing; Song, Mingxing; Hao, Zhaomin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhang, Hongjie, E-mail: hongjie@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zuo, Jinglin; You, Xiaozeng [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)

    2014-04-15

    In this work, organic electroluminescent (EL) devices with dominant and supplementary light-emitting layers (EMLs) were designed to further improve the EL performances of two iridium{sup III}-based phosphorescent complexes, which have been reported to provide EL devices with slow EL efficiency roll-off. The widely used hole-block material 2,2′,2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) was selected as host material to construct the supplementary EML. Compared with single-EML devices, double-EMLs devices showed higher EL efficiencies, higher brightness, and lower operation voltage attributed to wider recombination zone and better balance of carriers. In addition, the insertion of supplementary EML is instrumental in facilitating carriers trapping, thus improving the color purity. Finally, high performance blue-green and green EL devices with maximum current efficiencies of 35.22 and 90.68 cd/A, maximum power efficiencies of 26.36 and 98.18 lm/W, and maximum brightness of 56,678 and 112,352 cd/m{sup 2}, respectively, were obtained by optimizing the doping concentrations. Such a device design strategy extends the application of a double EML device structure and provides a chance to simplify device fabrication processes. -- Highlights: • Electroluminescent devices with supplementary light-emitting layer were fabricated. • Doping concentrations and thicknesses were optimized. • Better balance of holes and electrons causes the enhanced efficiency. • Improved carrier trapping suppresses the emission of host material.

  16. High-performance alternating current field-induced chromatic-stable white polymer electroluminescent devices employing a down-conversion layer

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Yingdong; Chen, Yonghua; Smith, Gregory M. [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States); Sun, Hengda; Yang, Dezhi [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Nie, Wanyi; Li, Yuan; Huang, Wenxiao [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States); Ma, Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Carroll, David L., E-mail: carroldl@wfu.edu [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States)

    2015-05-15

    In this work, a high-performance alternating current (AC) filed-induced chromatic-stable white polymer electroluminescence (WFIPEL) device was fabricated by combining a fluorophor Poly(9,9-dioctylfluorene) (PFO)-based blue device with a yellow down-conversion layer (YAG:Ce). A maximum luminance of this down-conversion FIPEL device achieves 3230 cd m{sup −2}, which is 1.41 times higher than the device without the down-conversion layer. A maximum current efficiency and power efficiency of the down-conversion WFIPEL device reach 19.7 cd A{sup −1} at 3050 cd m{sup −2} and 5.37 lm W{sup −1} at 2310 cd m{sup −2} respectively. To the best of our knowledge, the power efficiency is one of the highest reports for the WFIPEL up to now. Moreover, Commison Internationale de L’Eclairage (CIE) coordinates of (0.28, 0.30) is obtained by adjusting the thickness of the down-conversion layer to 30 μm and it is kept stable over the entire AC-driven voltage range. We believe that this AC-driven, down-conversion, WFIPEL device may offer an easy way towards future flat and flexible lighting sources. - Highlights: • A high-performance AC filed-induced chromatic-stable white polymer electroluminescence (WFIPEL) device was fabricated. • A maximum luminance, current efficiency, and power efficiency achieves 3230 cd m{sup −2}, 19.7 cd A{sup −1}, and 5.37 lm W{sup −1}, respectively. • The power efficiency is one of the highest reports for the WFIPEL up to now. • The EL spectrum kept very stable over the entire AC-driven voltage range.

  17. Luminescent Langmuir-Blodgett film of a new amphiphilic Eu3+ β-diketonate

    International Nuclear Information System (INIS)

    Gomes, Luciano F.; Oliveira, Kleber T. de; Neri, Claudio R.; Sousa Filho, Paulo C. de; Bianco, Marcos J. dal; Ramos, Ana P.; Zaniquelli, Maria E.D.; Serra, Osvaldo A.

    2008-01-01

    This work reports on the synthesis and characterization of the ligand 3-hexadecylpentane-2,4-dione (Hhdacac) and its Eu 3+ complexes Eu(hdacac) 6 .2H 2 O, Eu(hdacac) 6 .phen and Eu(hdacac) 6 .tta, where phen and tta denote 1,10-phenanthroline and thenoyltrifluoroacetone, respectively. These new compounds present long carbon chains and their expected miscibility into non-polar ambients is confirmed by the emission spectra of Eu(hdacac) 6 .tta in hexane. Moreover, the amphiphilic properties of Eu(hdacac) 6 complexes allow the obtainment of thin luminescent films by the Langmuir-Blodgett technique. In both cases (solids and films), the typical antenna effect of β-diketonates is observed. The alluring characteristics of these compounds raise great interest in many fields of Materials Science, like photo- and electro-luminescent materials (mainly thin 'organic' films), metal catalysts or probes in non-polar solutions, and Langmuir-Blodgett films of several compositions. For the characterization of these products, nuclear magnetic resonance spectroscopy ( 1 H NMR), thermogravimetric analysis, elementary analyses (C, H), scanning electron microscopy (energy dispersive X-ray spectroscopy), absorption (UV-vis/FT-IR) and photoluminescence spectroscopies were used

  18. Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

    International Nuclear Information System (INIS)

    Xu, Yingtian; Dai, Jun; Shi, Zhifeng; Long, Beihong; Wu, Bin; Cai, Xupu; Chu, Xianwei; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

    2014-01-01

    In this paper, n-ZnO single microwire/p + -Si heterojunction LEDs are fabricated using the transparent conductive ITO film as an electrode. A distinct UV emission resulting from free exciton recombination in a ZnO single microwire is observed in the electroluminescence. Size difference of ZnO single microwire shows significant influence on emission efficiency. The EL spectra of n-ZnO single microwire/p-Si heterostructure exhibited relatively stronger UV emission which was compared with the EL spectra of n-ZnO single nanowire/p-Si heterostructure and n-ZnO film/p-Si heterostructure, respectively. - Highlights: • The ZnO microwires were synthesized with a vapor phase transport method. • ZnO single microwire/Si LEDs were fabricated using the ITO film as an electrode. • The EL spectra had been compared with n-ZnO film/p-Si heterostructure. • The EL spectra had been compared with n-ZnO single nanowire/p-Si heterostructure

  19. High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.

    Science.gov (United States)

    Longo, Giulia; La-Placa, Maria-Grazia; Sessolo, Michele; Bolink, Henk J

    2017-10-09

    One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr 3 ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Black Films and Film-Makers.

    Science.gov (United States)

    Patterson, Lindsay, Ed.

    The development of black films and the attitudes of the film industry toward black films and black actors are some of the topics examined in this anthology of essays. Section 1, "Nigger to Supernigger," contains such articles as "The Death of Rastus: Negroes in American Films" by Thomas R. Cripps and "Folk Values in a New Medium" by Alain Locke…

  1. Effects of Various Parameters on Structural and Optical Properties of CBD-Grown ZnS Thin Films: A Review

    Science.gov (United States)

    Sinha, Tarkeshwar; Lilhare, Devjyoti; Khare, Ayush

    2018-02-01

    Zinc sulfide (ZnS) thin films deposited by chemical bath deposition (CBD) technique have proved their capability in a wide area of applications including electroluminescent and display devices, solar cells, sensors, and field emitters. These semiconducting thin films have attracted a much attention from the scientific community for industrial and research purposes. In this article, we provide a comprehensive review on the effect of various parameters on various properties of CBD-grown ZnS films. In the first part, we discuss the historical background of ZnS, its basic properties, and the advantages of the CBD technique. Detailed discussions on the film growth, structural and optical properties of ZnS thin films affected by various parameters, such as bath temperature and concentration, deposition time, stirring speed, complexing agents, pH value, humidity in the environment, and annealing conditions, are also presented. In later sections, brief information about the recent studies and findings is also added to explore the scope of research work in this field.

  2. Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

    International Nuclear Information System (INIS)

    Cho, Joong-yeon; Park, Sang-Jun; Ahn, Jinho; Lee, Heon

    2014-01-01

    In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%

  3. Nanopatterned yttrium aluminum garnet phosphor incorporated film for high-brightness GaN-based white light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Joong-yeon; Park, Sang-Jun [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Material Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Heon, E-mail: heonlee@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2014-11-03

    In this study, we fabricated high-brightness white light emitting diodes (LEDs) by developing a nanopatterned yttrium aluminum garnet (YAG) phosphor-incorporated film. White light can be obtained by mixing blue light from a GaN-based LED and yellow light of the YAG phosphor-incorporated film. If white light sources can be fabricated by exciting proper yellow phosphor using blue light, then these sources can be used instead of the conventional fluorescent lamps with a UV source, for backlighting of displays. In this work, a moth-eye structure was formed on the YAG phosphor-incorporated film by direct spin-on glass (SOG) printing. The moth-eye structures have been investigated to improve light transmittance in various optoelectronic devices, including photovoltaic solar cells, light emitting diodes, and displays, because of their anti-reflection property. Direct SOG printing, which is a simple, easy, and relatively inexpensive process, can be used to fabricate nanoscale structures. After direct SOG printing, the moth-eye structure with a diameter of 220 nm was formed uniformly on the YAG phosphor-incorporated film. As a result of moth-eye patterning on the YAG phosphor-incorporated film, the light output power of a white LED with a patterned YAG phosphor-incorporated film increased to up to 13% higher than that of a white LED with a non-patterned film. - Highlights: • GaN-based high-brightness white LED was prepared using patterned YAG phosphor-incorporated films. • Direct hydrogen silsesquioxane printing was used to form moth-eye patterns on the YAG films. • The electroluminescence intensity of the white LED was enhanced by up to 14.9%.

  4. Film: An Introduction.

    Science.gov (United States)

    Fell, John L.

    "Understanding Film," the opening section of this book, discusses perceptions of and responses to film and the way in which experiences with and knowledge of other media affect film viewing. The second section, "Film Elements," analyzes the basic elements of film: the use of space and time, the impact of editing, sound and color, and the effects…

  5. Film and History.

    Science.gov (United States)

    Schaber, Robin L.

    2002-01-01

    Provides an annotated bibliography of Web sites that focus on using film to teach history. Includes Web sites in five areas: (1) film and education; (2) history of cinema; (3) film and history resources; (4) film and women; and (5) film organizations. (CMK)

  6. Spontaneous formation of {1 1-bar 0 1} InGaN quantum wells on a (1 1 2-bar 2) GaN template and their electroluminescence characteristics

    International Nuclear Information System (INIS)

    Masui, Hisashi; Kamber, Derrick S; Brinkley, Stuart E; Wu, Feng; Baker, Troy J; Zhong, Hong; Iza, Michael; Speck, James S; Nakamura, Shuji; DenBaars, Steven P

    2010-01-01

    Discrete dies of the light-emitting diode (LED) fabricated on a (1 1 2-bar 2)-oriented GaN template exhibited electroluminescence peaked at 467 nm and optical output power was greater than 200 µW at 20 mA. The LED was found to have quantum well structure grown on spontaneously formed {1 1-bar 0 1} facets, confirmed via transmission electron microscopy. Polarization switching was observed in luminescence perpendicular to the device surface: the dominant polarization was parallel to [1-bar 1-bar 2 3]. The device structure was shown to be advantageous for photovoltaic cell applications by evaluating photo-induced current, although piezoelectric effects on photocurrent were not explicitly determined. The filling rate of band-edge states was estimated to be 0.025 eV per decade of current via low-temperature electroluminescence measurements

  7. Study of electrostatically self-assembled thin films of CdS and ZnS nanoparticle semiconductors

    Science.gov (United States)

    Suryajaya

    In this work, CdS and ZnS semiconducting colloid nanoparticles coated with organic shell, containing either SO[3-] or NH[2+] groups, were deposited as thin films using the technique of electrostatic self-assembly. The films produced were characterized with UV-vis spectroscopy and spectroscopic ellipsometry - for optical properties; atomic force microscopy (AFM) - for morphology study; mercury probe - for electrical characterisation; and photon counter - for electroluminescence study. UV-vis spectra show a substantial blue shift of the main absorption band of both CdS and ZnS, either in the form of solutions or films, with respect to the bulk materials. The calculation of nanoparticles' radii yields the value of about 1.8 nm for both CdS and ZnS.The fitting of standard ellipsometry data gave the thicknesses (d) of nanoparticle layers of around 5 nm for both CdS and ZnS which corresponds well to the size of particles evaluated from UV-vis spectral data if an additional thickness of the organic shell is taken into account. The values of refractive index (n) and extinction coefficient (k) obtained were about 2.28 and 0.7 at 633 nm wavelength, for both CdS and ZnS.Using total internal reflection (TIRE), the process of alternative deposition of poly-allylamine hydrochloride (PAH) and CdS (or ZnS) layers could be monitored in-situ. The dynamic scan shows that the adsorption kinetic of the first layer of PAH or nanoparticles was slower than that of the next layer. The fitting of TIRE spectra gavethicknesses of about 7 nm and 12 nm for CdS and ZnS, respectively. It supports the suggestion of the formation of three-dimensional aggregates of semiconductor nanoparticles intercalated with polyelectrolyte.AFM images show the formation of large aggregates of nanoparticles, about 40-50 nm, for the films deposited from original colloid solutions, while smaller aggregates, about 12-20 nm, were obtained if the colloid solutions were diluted.Current-voltage (I-V) and capacitance

  8. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  9. Film Noir Style Genealogy

    OpenAIRE

    Rietuma, Dita

    2012-01-01

    Annotation for the Doctoral Work Film Noir Style Genealogy (The Genealogy of the Film Noir Style) The doctoral work topic Film Noir Style Genealogy encompasses traditionally approved world film theory views on the concept of film noir and its related cinematographic heritage, and an exploration of its evolution and distinctive style, including – the development of film noir in the USA, Europe, and also in Latvia, within the context of both socio-political progression and the paradigm of m...

  10. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    International Nuclear Information System (INIS)

    Park, Jong Hyeok; Kim, Chulhee; Kim, Young Chul

    2009-01-01

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  11. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jong Hyeok [Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Chulhee [Hyperstructured Organic Materials Research Center, Department of Polymer Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kim, Young Chul, E-mail: kimyc@khu.ac.k [Department of Chemical Engineering and RIC-CAMID, Kyung Hee University, Yongin-si, Kyunggi-do 499-701 (Korea, Republic of)

    2009-02-07

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  12. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    Science.gov (United States)

    Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

    2009-02-01

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  13. Contemporary Films' Mini Course on Film Study.

    Science.gov (United States)

    Schillaci, Peter

    This minicourse on film study can be a unit in English, in arts, or in the humanities. It can help to launch a film study course or complement an introduction to theater. Whatever form it takes, it helps to build a bridge to the student's media environment. Part one, the language of images, utilizes four films which demonstrate the basic elements…

  14. The Evolution of Film: Rethinking Film Studies

    OpenAIRE

    Harbord, Janet P.

    2007-01-01

    How is film changing? What does it do, and what do we do with it? This book examines the reasons why we should be studying film in the twenty-first century, connecting debates from philosophy, anthropology and new media with historical concerns of film studies.

  15. Electroluminescent TCC, C3dg and fB/Bb epitope assays for profiling complement cascade activation in vitro using an activated complement serum calibration standard.

    Science.gov (United States)

    van Vuuren, B Jansen; Bergseth, G; Mollnes, T E; Shaw, A M

    2014-01-15

    Electroluminescent assays for epitopes on the complement components C3dg, terminal complement complex (TCC) and factor B/Bb (fB/Bb) have been developed with capture and detection antibodies to produce detection limits C3dg=91±9ng/mL, TCC=3±0.1ng/mL and fB=55.7±0.1ng/mL. The assay performance was assessed against a series of zymosan and heat aggregated IgG (HAIgG) in vitro activations of complement using a calibrated activated complement serum (ACS) as calibration standard. The ACS standard was stable within 20% accuracy over a 6-month period with freeze-thaw cycles as required. Differential activation of the complement cascade was observed for TCC showing a pseudo-first order formation half-life of 3.5h after activation with zymosan. The C3dg activation fragment indicates a 10% total activation for both activation agents. The kinetic-epitope analysis for fB indicates that the capture epitope is on the fB/Bb protein fragment which can then become covered by the formation of C3bBb or C3bBbP complexes during the time course of the cascade. Copyright © 2013 Elsevier B.V. All rights reserved.

  16. Near-intrinsic energy resolution for 30–662 keV gamma rays in a high pressure xenon electroluminescent TPC

    International Nuclear Information System (INIS)

    Álvarez, V.; Borges, F.I.G.M.; Cárcel, S.; Castel, J.; Cebrián, S.; Cervera, A.; Conde, C.A.N.; Dafni, T.; Dias, T.H.V.T.; Díaz, J.

    2013-01-01

    We present the design, data and results from the NEXT prototype for Double Beta and Dark Matter (NEXT-DBDM) detector, a high-pressure gaseous natural xenon electroluminescent time projection chamber (TPC) that was built at the Lawrence Berkeley National Laboratory. It is a prototype of the planned NEXT-100 136 Xe neutrino-less double beta decay (0νββ) experiment with the main objectives of demonstrating near-intrinsic energy resolution at energies up to 662 keV and of optimizing the NEXT-100 detector design and operating parameters. Energy resolutions of ∼1% FWHM for 662 keV gamma rays were obtained at 10 and 15 atm and ∼5% FWHM for 30 keV fluorescence xenon X-rays. These results demonstrate that 0.5% FWHM resolutions for the 2459 keV hypothetical neutrino-less double beta decay peak are realizable. This energy resolution is a factor 7–20 better than that of the current leading 0νββ experiments using liquid xenon and thus represents a significant advancement. We present also first results from a track imaging system consisting of 64 silicon photo-multipliers recently installed in NEXT–DBDM that, along with the excellent energy resolution, demonstrates the key functionalities required for the NEXT-100 0νββ search

  17. Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhao, De Gang, E-mail: dgzhao@red.semi.ac.cn; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2015-11-15

    The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.

  18. Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

    Science.gov (United States)

    Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

    2011-08-01

    This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

  19. Synthesis and Electroluminescence Properties of 3-(Trifluoromethylphenyl-Substituted 9,10-Diarylanthracene Derivatives for Blue Organic Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Sang Woo Kwak

    2017-10-01

    Full Text Available Diaryl-substituted anthracene derivatives containing 3-(trifluoromethylphenyl groups, 9,10-diphenyl-2-(3-(trifluoromethylphenylanthracene (1, 9,10-di([1,1′-biphenyl]-4-yl-2-(3-(trifluoromethylphenylanthracene (2, and 9,10-di(naphthalen-2-yl-2-(3-(trifluoromethylphenylanthracene (3 were synthesized and characterized. The compounds 1–3 possessed high thermal stability and proper frontier-energy levels, which make them suitable as host materials for blue organic light-emitting diodes. The electroluminescent (EL emission maximum of the three N,N-diphenylamino phenyl vinyl biphenyl (DPAVBi-doped (8 wt % devices for compounds 1–3 was exhibited at 488 nm (for 1 and 512 nm (for 2 and 3. Among them, the 1-based device displayed the highest device performances in terms of brightness (Lmax = 2153.5 cd·m−2, current efficiency (2.1 cd·A−1, and external quantum efficiency (0.8%, compared to the 2- and 3-based devices.

  20. Synthesis and electroluminescence characterization of a new aluminum complex, [8-hydroxyquinoline] bis [2, 2'bipyridine] aluminum Al(Bpy)2q

    Science.gov (United States)

    Rahul, Kumar; Ritu, Srivastava; Punita, Singh

    2016-01-01

    We have synthesized and characterized a new electroluminescent material, [8-hydroxyquinoline] bis [2,2'bipyridine] aluminum. A solution of this material Al(Bpy)2q in toluene showed absorption maxima at 380 nm, which was attributed to the moderate energy (π-π*) transitions of the aromatic rings. The photoluminescence spectrum of Al(Bpy)2q in the toluene solution showed a peak at 518 nm. This material shows thermal stability up to 300 °C. The structure of the device is ITO/F4-TCNQ (1 nm)/α-NPD (35 nm)/Al(Bpy)2q (35 nm)/ BCP (6 nm)/Alq3 (28 nm)/LiF (1 nm)/Al (150 nm). This device exhibited a luminescence peak at 515 nm (CIE coordinates, x = 0.32, y = 0.49). The maximum luminescence of the device was 214 cd/m2 at 21 V. The maximum current efficiency of OLED was 0.12 cd/A at 13 V and the maximum power efficiency was 0.03 lm/W at 10 V.

  1. Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect

    International Nuclear Information System (INIS)

    Liu, C; Dai, L; You, L P; Xu, W J; Qin, G G

    2008-01-01

    Single-crystalline n-type InP nanowires (NWs) with different electron concentrations were synthesized on Si substrates via the vapor phase transport method. The electrical properties of the InP nanowires were investigated by fabricating and measuring single NW field-effect transistors (FETs). Single InP NW/p + -Si heterojunctions were fabricated, and electroluminescence (EL) spectra from them were studied. It was found that both the photoluminescence (PL) spectra of the InP NWs and the EL spectra of the heterojunctions blueshift from 920 to 775 nm when the electron concentrations of the InP NWs increase from 2 x 10 17 to 1.4 x 10 19 cm -3 . The blueshifts can be attributed to the Burstein-Moss effect rather than the quantum confinement effect in the InP NWs. The large blueshifts observed in this study indicate a potential application of InP NWs in nano-multicolour displays.

  2. Molecular structure, photoluminescent and electroluminescent properties of bis(2-(4-methyl-2-hydroxyphenyl)benzothiazolate) zinc with excellent electron-transport characteristics

    International Nuclear Information System (INIS)

    Xu Huixia; Xu Bingshe; Fang Xiaohong; Yue Yan; Chen Liuqing; Wang Hua; Hao Yuying

    2011-01-01

    Highlights: → The synthesis, crystal structure and photophysical properties of Zn(4-MeBTZ) 2 were reported. → The electron-transport property was investigated by theoretical calculations and experimental. → We found that Zn(4-MeBTZ) 2 has a higher electron mobility than that of [Zn(BTZ) 2 ] 2 and the devices based on it have a lower turn-on voltage. - Abstract: In this article, the molecular structure, photoluminescent and electroluminescent properties of bis(2-(4-methyl-2-hydroxyphenyl) benzothiazolate) zinc (Zn(4-MeBTZ) 2 ) with good electron-transport characteristics were reported. This complex was identified as triclinic structure with the strong intermolecular π-π stacking interactions between the benzothiazolate/phenoxido rings and weak intramolecular hydrogen bonds by X-ray single-crystal diffraction. Quantum chemical method has been employed to investigate electron structure and charge transport property. The blue-green light emission was observed by fabricating double-layer devices using Zn(4-MeBTZ) 2 as electron-transport and NPB as hole-transport material. The performance of organic light-emitting devices based on Zn(4-MeBTZ) 2 is much better than that of the devices based on [Zn(BTZ) 2 ] 2 .

  3. Analysis of interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide diodes by electroluminescence spectroscopy and electric-field-induced optical second-harmonic generation measurement

    Science.gov (United States)

    Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-03-01

    By using electroluminescence (EL) spectroscopy and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide (IZO) diodes, to characterize the pentacene/polyimide interface. Under positive voltage application to the Au electrode with reference to the IZO electrode, the EFISHG showed that holes are injected from Au electrode, and accumulate at the pentacene/polyimide interface with the surface charge density of Qs = 3.8 × 10-7 C/cm2. The EL spectra suggested that the accumulated holes are not merely located in the pentacene but they are transferred to the interface states of polyimide. These accumulated holes distribute with the interface state density greater than 1012 cm-2 eV-1 in the range E = 1.5-1.8 and 1.7-2.4 eV in pentacene and in polyimide, respectively, under assumption that accumulated holes govern recombination radiation. The EL-EFISHG measurement is helpful to characterize organic-organic layer interfaces in organic devices and provides a way to analyze interface energy states.

  4. Effect of the polymer emission on the electroluminescence characteristics of n-ZnO nanorods/p-polymer hybrid light emitting diode

    Science.gov (United States)

    Zaman, S.; Zainelabdin, A.; Amin, G.; Nur, O.; Willander, M.

    2011-09-01

    Hybrid light emitting diodes (LEDs) based on zinc oxide (ZnO) nanorods and polymers (single and blended) were fabricated and characterized. The ZnO nanorods were grown by the chemical bath deposition method at 50°C. Three different LEDs, with blue emitting, orange-red emitting or their blended polymer together with ZnO nanorods, were fabricated and studied. The current-voltage characteristics show good diode behavior with an ideality factor in the range of 2.1 to 2.27 for all three devices. The electroluminescence spectrum (EL) of the blended device has an emission range from 450 nm to 750 nm, due to the intermixing of the blue emission generated by poly(9,9-dioctylfluorene) denoted as PFO with orange-red emission produced by poly(2-methoxy-5(20-ethyl-hexyloxy)-1,4-phenylenevinylene) 1,4-phenylenevinylene) symbolized as MEH PPV combined with the deep-band emission (DBE) of the ZnO nanorods, i.e. it covers the whole visible region and is manifested as white light. The CIE color coordinates showed bluish, orange-red and white emission from the PFO, MEH PPV and blended LEDs with ZnO nanorods, respectively. These results indicate that the choice of the polymer with proper concentration is critical to the emitted color in ZnO nanorods/p-organic polymer LEDs and careful design should be considered to obtain intrinsic white light sources.

  5. Synthesis and electroluminescence characterization of a new aluminum complex, [8-hydroxyquinoline] bis [2, 2'bipyridine] aluminum Al(Bpy)2q

    International Nuclear Information System (INIS)

    Rahul, Kumar; Ritu, Srivastava; Punita, Singh

    2016-01-01

    We have synthesized and characterized a new electroluminescent material, [8-hydroxyquinoline] bis [2,2'bipyridine] aluminum. A solution of this material Al(Bpy) 2 q in toluene showed absorption maxima at 380 nm, which was attributed to the moderate energy (π–π*) transitions of the aromatic rings. The photoluminescence spectrum of Al(Bpy) 2 q in the toluene solution showed a peak at 518 nm. This material shows thermal stability up to 300 °C. The structure of the device is ITO/F4-TCNQ (1 nm)/α-NPD (35 nm)/Al(Bpy) 2 q (35 nm)/ BCP (6 nm)/Alq 3 (28 nm)/LiF (1 nm)/Al (150 nm). This device exhibited a luminescence peak at 515 nm (CIE coordinates, x = 0.32, y = 0.49). The maximum luminescence of the device was 214 cd/m 2 at 21 V. The maximum current efficiency of OLED was 0.12 cd/A at 13 V and the maximum power efficiency was 0.03 lm/W at 10 V. (paper)

  6. Electroluminescence properties of organic light-emitting diodes with a red dye doped into Alq{sub 3} : rubrene mixed host

    Energy Technology Data Exchange (ETDEWEB)

    Kang, H. Y. [Inha University, Incheon (Korea, Republic of); Lee, C. H. [Seoul National University, Seoul (Korea, Republic of)

    2004-09-15

    We have studied the electroluminescence (EL) properties of devices with a red fluorescent dye, 4-(dicyanomethylene)-2-t-butyl-6- (1,1,7,7-tetramethyl-julolidyl-9-enyl)--4H-py ran (DCJTB), doped into a mixed matrix of tris-(8-hydroxyquinoline)aluminum (Alq{sub 3}) and rubrene. The devices doped with DCJTB in the Alq{sub 3}:rubrene mixed host show an efficient red emission from DCJTB with negligible EL emission from both Alq{sub 3} and rubrene. The QE increases with increasing rubrene concentration and reaches a maximum of about 3.6 % for a DCJTB doping concentration of about 5 % in the Alq3:rubrene mixed (50:50 % ratio by weight) host, and then decreases at higher rubrene concentration, due to the concentration quenching effect. At a given bias voltage, the current density increases with increasing rubrene doping concentration, but it decreases with increasing DCJTB doping concentration. The results imply that the injected electrons and holes can transport via hopping through the energy levels of rubrene molecules while DCJTB acts as traps.

  7. Comparison of the electroluminescence of a red fluorescent dye doped into the Alq{sub 3} and Alq{sub 3}:rubrene mixed host

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Hee-Young; Kang, Gi-Wook; Park, Kyung-Min; Yoo, In-Sun; Lee, Changhee

    2004-01-05

    We studied the effect of a mixed host of Alq{sub 3} and rubrene on the energy transfer and charge trapping processes in organic light-emitting devices with a red fluorescent dopant of 4-(dicyanomethylene)-2-tert-butyl-6 (1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB). The temperature dependence of electroluminescence (EL) properties is compared for the device with DCJTB doped into the Alq{sub 3} only host and that with the Alq{sub 3}:rubrene mixed host. The device with the Alq{sub 3}:rubrene mixed host shows an efficient red emission from DCJTB, negligible EL emission from Alq{sub 3}, and a lower EL drive voltage compared to the device with the Alq{sub 3} only host. Upon cooling the device temperature, the EL emission from rubrene increases but the emission from Alq{sub 3} is still weak, and the quantum efficiency (QE) is almost temperature-independent for the device with the Alq{sub 3}:rubrene mixed host. On the contrary, the EL emission from Alq{sub 3} increases and the QE decreases for devices with the Alq{sub 3} only host at low temperature. The results indicate that recombination of injected electrons and holes occurs on rubrene and subsequent energy transfer to DCJTB dominates in the device with the Alq{sub 3}:rubrene mixed host.

  8. Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

    International Nuclear Information System (INIS)

    Liu, Wei; Zhao, De Gang; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei; Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui

    2015-01-01

    The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed

  9. Synthesis, structures, and electroluminescent properties of scandium N,O-chelated complexes toward near-white organic light-emitting diodes.

    Science.gov (United States)

    Katkova, Marina A; Balashova, Tatyana V; Ilichev, Vasilii A; Konev, Alexey N; Isachenkov, Nikolai A; Fukin, Georgy K; Ketkov, Sergey Yu; Bochkarev, Mikhail N

    2010-06-07

    Three members of a new class of electroluminescent, neutral, and monomeric scandium N,O-chelate complexes, namely, Sc(III)-tris-2-(2-benzoimidazol-2-yl)phenolate (1), Sc(III)-tris-2-(2-benzoxyazol-2-yl)phenolate (2), and Sc(III)-tris-2-(2-benzothiazol-2-yl)phenolate (3), have been prepared and X-ray characterized. DFT calculations have been performed. In contrast to the most frequently applied dual or multiple dopants in multilayer white OLED devices, all our simpler devices with the configuration of indium tin oxide/N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine/neat scandium complex/Yb exhibit close to near-white emission with a blue hue (CIE(x,y) = 0.2147, 0.2379) in the case of 1, a cyan hue (0.2702, 0.3524) in the case of 2, and a yellowish hue (0.3468; 0.4284) in the case of 3.

  10. Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

    International Nuclear Information System (INIS)

    Pomeroy, J. W.; Kuball, M.

    2015-01-01

    Solid immersion lenses (SILs) are shown to greatly enhance optical spatial resolution when measuring AlGaN/GaN High Electron Mobility Transistors (HEMTs), taking advantage of the high refractive index of the SiC substrates commonly used for these devices. Solid immersion lenses can be applied to techniques such as electroluminescence emission microscopy and Raman thermography, aiding the development device physics models. Focused ion beam milling is used to fabricate solid immersion lenses in SiC substrates with a numerical aperture of 1.3. A lateral spatial resolution of 300 nm is demonstrated at an emission wavelength of 700 nm, and an axial spatial resolution of 1.7 ± 0.3 μm at a laser wavelength of 532 nm is demonstrated; this is an improvement of 2.5× and 5×, respectively, when compared with a conventional 0.5 numerical aperture objective lens without a SIL. These results highlight the benefit of applying the solid immersion lenses technique to the optical characterization of GaN HEMTs. Further improvements may be gained through aberration compensation and increasing the SIL numerical aperture

  11. Film quality in film mammography. Pt. 2

    International Nuclear Information System (INIS)

    Friedrich, M.; Weskamp, P.; Freie Univ. Berlin

    1976-01-01

    During consideration of three film mammographic systems, the concept of signal/noise ratio is developed as a quantitative measure of film quality. The ability to recognise detail related to detail size, film blackening and exposure geometry was studied for various systems, and the quality profiles are discussed. There is a considerable difference in quality between industrial films without screens and film-screen combinations; however, exposure geometry during mammography has a considerable effect which tends to reduce the difference. Consequently, detail sizes of 200 μ to 1,000 μ (including the majority of mammographic micro-calcifications) are shown about equally well. Contrast for the lo-dose system is somewhat less than for adequately exposed industrial film. Over-exposure with the lo-dose system, contrary to industrial film, rapidly leads to unsatisfactory results. On the other hand it is often not possible to obtain an adequate exposure when using industrial film. For these reasons it is often an advantage to examine large breasts and the dense breasts of young women with a film-screen combination which requires approximately one eighth of the dose necessary for industrial film. For small or easily compressable breasts best results are obtained, using an adequate exposure by employing industril film; radiation dose it then acceptable. (orig./ORU) [de

  12. Uniformly irradiated polymer film

    International Nuclear Information System (INIS)

    Fowler, S.L.

    1979-01-01

    Irradiated film having substantial uniformity in the radiation dosage profile is produced by irradiating the film within a trough having lateral deflection blocks disposed adjacent the film edges for deflecting electrons toward the surface of the trough bottom for further deflecting the electrons toward the film edge

  13. Films and dark room

    International Nuclear Information System (INIS)

    Abdul Nassir Ibrahim; Azali Muhammad; Ab. Razak Hamzah; Abd. Aziz Mohamed; Mohamad Pauzi Ismail

    2008-01-01

    After we know where the radiographic come from, then we must know about the film and also dark room. So, this chapter 5 discusses the two main components for radiography work that is film and dark room, places to process the film. Film are structured with three structured that are basic structured, emulsion and protection structured. So, this film can be classified either with their speed, screen and standard that used. The process to wash the film must be done in dark room otherwise the radiographer cannot get what are they inspected. The processing of film will be discussed briefly in next chapter.

  14. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Feng; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn; Liu, Jianping; Zhang, Shuming [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Zhou, Kun; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Institute of Semiconductors (CAS), Beijing 100083 (China); Liu, Zongshun [Institute of Semiconductors (CAS), Beijing 100083 (China)

    2015-07-21

    Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

  15. Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

    Science.gov (United States)

    Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

    1993-06-01

    Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

  16. Film som kunst

    DEFF Research Database (Denmark)

    Petersen, Anne Ring

    2013-01-01

    Films by artists induce scholars to work across art, film and cultural history. Accordingly, this article adopts an interdisciplinary approach to the British-Nigerian artist Yinka Shonibare’s film Un Ballo in Maschera (2004). The film is grounded in Shonibare’s unique use of African-print fabric...... in conjunction with references to European cultural and political history, but the film is also – it is alleged – rooted in Black British cinema and the transnational postcolonialism which emerged in the UK of the 1980s. The article starts with a general introduction to Shonibare’s art and the colonial...... connotations of the African-print fabric, which are also central to the critique of power in Un Ballo in Maschera. Its critical agenda is then analysed and put into historical perspective by relating the film to Black British film. A comparison with the Black Audio Film Collective’s key work Handsworth Songs...

  17. The Educational Film Industry

    Science.gov (United States)

    Tortora, Vincent R.; Schillaci, Peter

    1975-01-01

    Increased dialog is needed among educational film producers, distributors, and consumers in order to be sure that what is being produced meets educators' needs and also to help solve the financial problems of the film industry. (LS)

  18. Electrochromic nanocomposite films

    Science.gov (United States)

    Milliron, Delia; Llordes, Anna; Buonsanti, Raffaella; Garcia, Guillermo

    2018-04-10

    The present invention provides an electrochromic nanocomposite film. In an exemplary embodiment, the electrochromic nanocomposite film, includes (1) a solid matrix of oxide based material and (2) transparent conducting oxide (TCO) nanostructures embedded in the matrix. In a further embodiment, the electrochromic nanocomposite film farther includes a substrate upon which the matrix is deposited. The present invention also provides a method of preparing an electrochromic nanocomposite film.

  19. Lars von Triers film

    DEFF Research Database (Denmark)

    Nielsen, Lisbeth Overgaard

    2007-01-01

    Afhandlingen undersøger Lars von Triers filmæstetik, som den kommer til udtryk i spillefilmene fra perioden 1984-2007. Afhandlingen analyserer de enkelte films stil, virkningsstrategi og betydningsdannelse.......Afhandlingen undersøger Lars von Triers filmæstetik, som den kommer til udtryk i spillefilmene fra perioden 1984-2007. Afhandlingen analyserer de enkelte films stil, virkningsstrategi og betydningsdannelse....

  20. Defining Documentary Film

    DEFF Research Database (Denmark)

    Juel, Henrik

    2006-01-01

    A discussion of various attemts at defining documentary film regarding form, content, truth, stile, genre or reception - and a propoposal of a positive list of essential, but non-exclusive characteristica of documentary film......A discussion of various attemts at defining documentary film regarding form, content, truth, stile, genre or reception - and a propoposal of a positive list of essential, but non-exclusive characteristica of documentary film...

  1. Personnel photographic film dosimetry

    International Nuclear Information System (INIS)

    Keirim-Markus, I.B.

    1981-01-01

    Technology of personnel photographic film dosimetry (PPD) based on the photographic effect of ionizing radiation is described briefly. Kinds of roentgen films used in PPD method are enumerated, compositions of a developer and fixing agents for these films are given [ru

  2. Radiochromic film dosimetry

    International Nuclear Information System (INIS)

    Xu Zhiyong

    2002-01-01

    Radiochromic film dosimetry was developed to measure ionization irradiation dose for industry and medicine. At this time, there are no comprehensive guideline on the medical application, calibration method and densitometer system for medicine. The review gives update on Radiochromic film dosimetry used for medicine, including principles, film model and material, characteristics, calibration method, scanning densitometer system and medical application

  3. Australian Film Studies.

    Science.gov (United States)

    Breen, Myles P.

    Although Australia had a vigorous film industry in the silent film era, it was stifled in the 1930s when United States and British interests bought up the Australian distribution channels and closed down the indigenous industry. However, the industry and film study have undergone a renaissance since the advent of the Labor government in 1972,…

  4. Getting into Film.

    Science.gov (United States)

    London, Mel

    This book describes the various aspects of the film industry and the many jobs related to filmmaking, stressing that no "formula" exists for finding a successful career in the film industry. Chapters provide information on production, writing for film, cinematography, editing, music, sound, animation and graphics, acting and modeling, the "unsung…

  5. The Sponsored Film.

    Science.gov (United States)

    Klein, Walter J.

    For public relations professionals and would-be sponsors of films, this book provides guidelines for understanding the film medium and its potential as a persuasive force in industry, government, organizations, and religious orders. For filmmakers, it brings together practical information needed to survive in the sponsored-film industry and to…

  6. Introduction to Film Making.

    Science.gov (United States)

    Davis, Robert E.

    This booklet is intended for teachers who are now teaching units in film production as part of a program in communication or who wish to begin work with filmmaking in such a program. The first section is intended to serve as a brief introduction to film theory, while a major portion of the rest of the booklet is devoted to film projects which may…

  7. Teaching Culture Through Films

    Institute of Scientific and Technical Information of China (English)

    徐婷

    2016-01-01

    Cultural teaching is an issue which is associated with complexity and paradox and also it is a big challenge for faculty. Teaching culture through films has become an important way of cross-cultural teaching This paper focuses on the reasons for teaching culture through films, the value and how it works. And finally it leads out the prospects of cultural teaching through films.

  8. Influência de diferentes solventes utilizados na deposição de filme de poli(9-vinilcarbazol em dispositivos OLEDs

    Directory of Open Access Journals (Sweden)

    Emerson Roberto Santos

    2014-01-01

    Full Text Available This work studies the influence of the film deposition process on light emission performance and on threshold voltage of OLEDs, with architecture glass/ITO/PEDOT:PSS/PVK/Alq3/Al. The commercial PVK was dissolved in different solvents such as: chloroform, tetrahydrofuran, 1,2,4-trichlorobenzene and trimethylpentane. OLEDs were characterized by current-voltage and revealed a significant influence of the solvents, although all devices emitted green electroluminescence. A difference in threshold voltage up to 10 V was observed among OLEDs prepared from different solvents. The 1,2,4-trichlorobenzene showed best performance, presenting lowest treshold voltage (≈ 6 V, followed by tetrahydrofuran (≈ 8 V, trimethylpentane (≈ 14 V and chloroform (≈ 16 V.

  9. Film studies the basics

    CERN Document Server

    Villarejo, Amy

    2013-01-01

    Film Studies: The Basics is a compelling guide to the study of cinema in all its forms. This second edition has been thoroughly revised and updated to take account of recent scholarship, the latest developments in the industry and the explosive impact of new technologies. Core topics covered include:   The history, technology and art of cinema Theories of stardom, genre and film-making The movie industry from Hollywood to Bollywood Who does what on a film set   Complete with film stills, end-of-chapter summaries and a substantial glossary, Film Studies: The Basics is the ideal introduction to those new to the study of cinema.

  10. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  11. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  12. Influence of Exciplex formation on the electroluminescent properties of dimeric Zn (II) bis-2-(2'-hydroxyphenyl) benzoxazole complex and monomeric Zn (II) 2-(1'-hydroxynaphthyl) benzothiazole complex

    Science.gov (United States)

    Prakash, Sattey; Anand, R. S.; Manoharan, S. Sundar

    2011-10-01

    In this paper we present the factors affecting electroluminescent properties of Zinc complexes of oxazole & thiazole derivatives. Electroluminescent spectra of the Zinc (II) complex of bis-[2-(2'-hydroxyphenyl) benzoxazole], [Zn (HPBO)2]2 and 2-(1'-hydroxynaphthyl) benzothiazole [Zn (HNBT)2] show unusual broadening and shows structural and photophysical similarity with [Zn (HPBT)2]2, a dimeric complex. The [Zn (HPBO)2]2 complex as an emissive layer in the device structure ITO /PEDOT:PSS /TPD (30nm) /[Zn (HPBO)2]2 (60nm) /BCP (6nm) /Ca (3nm) /Al (200nm) shows a broad bluish green emission, with a full width at half maxima (FWHM1˜70nm). The EL spectra is much broader compared to the PL spectra because of exciplex formation at the interfacial region between the emissive layer (EML) & hole transport layer (HTL). We also show the device performance of Zinc 2-(1'-hydroxynaphthyl) benzothiazole [Zn (HNBT)2] complex as emissive layer. Distinctly this device shows a broad greenish yellow emission with a peak maxima at 535nm and 690nm, owing to the exciplex formation between electron transport layer (ETL) and emissive layer (EML), which is in sharp contrast to the exciplex formation across the HTL-EML interface observed for the [Zn (HPBO)2]2 complex.

  13. Screen-film mammography

    International Nuclear Information System (INIS)

    Logan, W.W.; Janus, J.A.

    1987-01-01

    The development of screen-film mammography has resulted in the re-emergence of confidence, rather than fear, in mammography. When screen-film mammography is performed with state-of-the-art dedicated equipment utilizing vigorous breast compression and a ''soft'' x-ray beam for improved contrast, screen-film images are equivalent or superior to those of reduced-dose xeromammography and superior to those of nonscreen film mammography. Technological aids for conversion from xeromammographic or nonscreen film mammographic techniques to screen-film techniques have been described. Screen-film mammography should not be attempted until dedicated equipment has been obtained and the importance of vigorous compression has been understood

  14. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  15. Effect of the substituents on the photophysical, electrochemical and electroluminescence properties of OLED dopant Iridium bis(2-phenylbenzothiozolato- N,C2')(acetylacetonate)

    Science.gov (United States)

    Ivanov, P.; Tomova, R.; Petrova, P.

    2014-12-01

    The effect of two substituents: clorine and 1,3-diphenylpropane-1,3-dionate, placed on different position in the molecule of Iridium (III) bis(2-phenylbenzothiozolato-N,C2')- (acetylacetonate) (bt)2Ir(acac), on its electrochemical behaviour, photophysical and electroluminescence properties were investigated. Three complexes (bt)2Ir(acac), Iridium (III) bis[2-(4-chlorophenyl)benzothiazolato-N,C2']-acetylacetonate (Clbt)2Ir(acac), in which the Cl atom was introduced on the 4-position in the benzothiazole ring, and the new Iridium (Ill) bis[2 -phenylbenzothiazolato -N,C2'] -(1,3 -diphenylpropane-1,3 -dionate) (bt)2Ir(dbm), where ancillary acetylacetonate ligand was replaced by 1,3-diphenylpropane-1,3-dionate, were synthesized and characterised by 1H-NMR and elemental analysis. The HOMO/LUMO energy levels of the complexes were determined by cyclic voltammetry (CV) and their properties were established by UV-Visible and fluorescence spectroscopy. The application of (Clbt)2Ir(acac), (bt)2Ir(bsm) and (bt)2Ir(acac) as dopants in hole transporting layer (HTL) of Organic light- emitting diodes(OLEDs). It was found that with respect to the reference (bt)2Ir(acac): both LUMO and HOMO of the substituted complexes were shifted to more positive values accordingly with 0.23 and 0.19 eV for (Clbt)2Ir(acac) and 0.14 and 0.12 eV for (bt)2Ir(dbm). OLEDs doped with 1 w% of the complexes irradiated the warm white light with Commission internationale de l'eclairage (CIE) coordinates: 0.24;0.38 for (Clbt)2Ir(acac), 0.30;0.44 for (bt)2Ir(acac) and 0.28;0.46 for (bt)2Ir(dbm). Devices doped with 10 w% of all complexes irradiated in the yellow orange region of the spectrum.

  16. RESEARCH ON THE ELECTRONIC AND OPTICAL PROPERTIES OF POLYMER AND OTHER ORGANIC MOLECULAR THIN FILMS

    Energy Technology Data Exchange (ETDEWEB)

    ALEXEI G. VITUKHNOVSKY; IGOR I. SOBELMAN - RUSSIAN ACADEMY OF SCIENCES

    1995-09-06

    Optical properties of highly ordered films of poly(p-phenylene) (PPP) on different substrates, thin films of mixtures of conjugated polymers, of fullerene and its composition with polymers, molecular J-aggregates of cyanine dyes in frozen matrices have been studied within the framework of the Agreement. Procedures of preparation of high-quality vacuum deposited PPP films on different substrates (ITO, Si, GaAs and etc.) were developed. Using time-correlated single photon counting technique and fluorescence spectroscopy the high quality of PPP films has been confirmed. Dependence of structure and optical properties on the conditions of preparation were investigated. The fluorescence lifetime and spectra of highly oriented vacuum deposited PPP films were studied as a function of the degree of polymerization. It was shown for the first time that the maximum fluorescence quantum yield is achieved for the chain length approximately equal to 35 monomer units. The selective excitation of luminescence of thin films of PPP was performed in the temperature range from 5 to 300 K. The total intensity of luminescence monotonically decreases with decreasing temperature. Conditions of preparation of highly cristallyne fullerene C{sub 60} films by the method of vacuum deposition were found. Composites of C{sub 60} with conjugated polymers PPV and polyacetylene (PA) were prepared. The results on fluorescence quenching, IR and resonant Raman spectroscopy are consistent with earlier reported ultrafast photoinduced electron transfer from PPV to C{sub 60} and show that the electron transfer is absent in the case of the PA-C{sub 60} composition. Strong quenching of PPV fluorescence was observed in the PPV-PA blends. The electron transfer from PPV to PA can be considered as one of the possible mechanisms of this quenching. The dynamics of photoexcitations in different types of J-aggregates of the carbocyanine dye was studied at different temperatures in frozen matrices. The optical

  17. Film: Genres and Genre Theory

    DEFF Research Database (Denmark)

    Bondebjerg, Ib

    2015-01-01

    Genre is a concept used in film studies and film theory to describe similarities between groups of films based on aesthetic or broader social, institutional, cultural, and psychological aspects. Film genre shares similarities in form and style, theme, and communicative function. A film genre...

  18. Film Music. Factfile No. 8.

    Science.gov (United States)

    Elsas, Diana, Ed.; And Others

    Organizations listed here with descriptive information include film music clubs and music guilds and associations. These are followed by a representative list of schools offering film music and/or film sound courses. Sources are listed for soundtrack recordings, sound effects/production music, films on film music, and oral history programs. The…

  19. Demagnetization in photomagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Pajerowski, Daniel M., E-mail: daniel@pajerowski.com [NIST Center for Neutron Research, Gaithersburg, Maryland 20899 (United States); Hallock, Scott J. [NIST Center for Neutron Research, Gaithersburg, Maryland 20899 (United States); Winston Churchill High School, Potomac, Maryland 20854 (United States)

    2012-05-15

    We present a model for demagnetization in photomagnetic films, and investigate different regimes for the magnetizing process using finite element analysis. It is found that the demagnetizing factor may depend strongly upon the high-spin fraction of the film, and the specifics of the dependence are dictated by the microscopic morphology of the photomagnetic domains. This picture allows for facile interpretation of existing data on photomagnetic films, and can even explain an observed photoinduced decrease in low-field magnetization concurrent with increase in high-spin fraction. As a whole, these results reiterate the need to consider demagnetizing effects in photomagnetic films. - Highlights: Black-Right-Pointing-Pointer Finite element methods are used to examine demagnetization in photomagnetic films. Black-Right-Pointing-Pointer Under the right conditions, photomagnetic films may show a photoinduced decrease. Black-Right-Pointing-Pointer Demagnetization in photomagnets will be important to consider in possible devices.

  20. Superconducting thin films

    International Nuclear Information System (INIS)

    Hebard, A.F.; Vandenberg, J.M.

    1982-01-01

    This invention relates to granular metal and metal oxide superconducting films formed by ion beam sputter deposition. Illustratively, the films comprise irregularly shaped, randomly oriented, small lead grains interspersed in an insulating lead oxide matrix. The films are hillock-resistant when subjected to thermal cycling and exhibit unusual josephson-type switching characteristics. Depending on the oxygen content, a film may behave in a manner similar to that of a plurality of series connected josephson junctions, or the film may have a voltage difference in a direction parallel to a major surface of the film that is capable of being switched from zero voltage difference to a finite voltage difference in response to a current larger than the critical current

  1. Underwater 3D filming

    Directory of Open Access Journals (Sweden)

    Roberto Rinaldi

    2014-12-01

    Full Text Available After an experimental phase of many years, 3D filming is now effective and successful. Improvements are still possible, but the film industry achieved memorable success on 3D movie’s box offices due to the overall quality of its products. Special environments such as space (“Gravity” and the underwater realm look perfect to be reproduced in 3D. “Filming in space” was possible in “Gravity” using special effects and computer graphic. The underwater realm is still difficult to be handled. Underwater filming in 3D was not that easy and effective as filming in 2D, since not long ago. After almost 3 years of research, a French, Austrian and Italian team realized a perfect tool to film underwater, in 3D, without any constrains. This allows filmmakers to bring the audience deep inside an environment where they most probably will never have the chance to be.

  2. Den danske independent film

    DEFF Research Database (Denmark)

    Hansen, Kim Toft

    2014-01-01

    at producere film, og derved er filmproduktion potentielt gjort tilgængelig for en større gruppe personer som både afsender og modtager. For det fjerde implicerer diskussionen af de to film også genre- og stilmæssige spørgsmål om dansk filmkultur, fordi indiefilmen både i film og uden for filmene italesætter...

  3. Religion og film

    DEFF Research Database (Denmark)

    Hvithamar, Annika; Eskjær, Mikkel Fugl

    2007-01-01

    Artiklen søger at stipulere en ramme for analyse af religion og film. Dels ved at række ud over den blotte konstatering af tilstedeværelse af religiøse elementer i film, dels ved at anslå en række temaer, der kan anvendes til analyse af sådanne film (individualisering, (de-)sekularisering, banal...

  4. Horror films and psychiatry.

    Science.gov (United States)

    Friedman, Susan Hatters; Forcen, Fernando Espi; Shand, John Preston

    2014-10-01

    Horror films have been popular for generations. The purpose of this article is to illustrate psychiatric conditions, themes and practice seen in horror films. Horror films often either include psychiatrists as characters or depict (Hollywood's dangerous version of) serious mental illness. Demonic possession, zombies, and 'slasher' killers are described, as well as the horror genre's characterizations of psychiatrists. © The Royal Australian and New Zealand College of Psychiatrists 2014.

  5. Renaissance of the Film.

    Science.gov (United States)

    Bellone, Julius, Ed.

    The post-World War II period was one of the liveliest in the history of the cinema. This is a collection of 33 critical articles on some of the best films of the perd. Most of the essays explicate the themes and symbols of the films. The essays deal with these films: "The Apu Trilogy,""L'Avventura,""Balthazar,""Blow-Up,""Bonnie and Clyde," Citizen…

  6. Film in concert

    OpenAIRE

    2017-01-01

    From the very beginning of cinema, music always played an important role in the history of filmmaking. Nonetheless, film music is judged by critics as a kind of low-grade art form. However, the majority of film score composers enjoyed a classical education and composed as well for the silver screen as for the concert hall. Film music also has its roots in the musical era of romanticism. Therefore, symphonic film scores can be regarded as program music in a broader sense. These scores were inf...

  7. Film, Neuroaesthetics, and Empathy

    DEFF Research Database (Denmark)

    Grodal, Torben Kragh; Kramer, Mette

    2014-01-01

    The article analyzes the link between film viewing and human 'ultra-sociality' (Boyd and Richardson 1998), describing how empathy is supported by mirror resonances but also modified by appraisal mechanisms and how emotions are communicated, It further discusses how 'attainment' to film builds...... on mother-child communication and also how film genres of attachment use such attainment, especially by means of close-ups of human faces and shot-reverse shots. Finally it deals with how films boost development of cognitive and emotional intelligence...

  8. The Possibility of Film Criticism.

    Science.gov (United States)

    Poague, Leland; Cadbury, William

    1989-01-01

    Examines the role of critical language in film criticism. Compares and contrasts Monroe Beardsley's philosophy on film aesthetics with the New Criticism. Outlines some of the contributions Beardsley has made to the study of film criticism. (KM)

  9. High color rendering index of remote-type white LEDs with multi-layered quantum dot-phosphor films and short-wavelength pass dichroic filters

    Science.gov (United States)

    Yoon, Hee Chang; Oh, Ji Hye; Do, Young Rag

    2014-09-01

    This paper introduces high color rendering index (CRI) white light-emitting diodes (W-LEDs) coated with red emitting (Sr,Ca)AlSiN3:Eu phosphors and yellowish-green emitting AgIn5S8/ZnS (AIS/ZS) quantum dots (QDs) on glass or a short-wavelength pass dichroic filter (SPDF), which transmit blue wavelength regions and reflect yellow wavelength regions. The red emitting (Sr,Ca)AlSiN3:Eu phosphor film is coated on glass and a SPDF using a screen printing method, and then the yellowish-green emitting AIS/ZS QDs are coated on the red phosphor (Sr,Ca)AlSiN3:Eu film-coated glass and SPDF using the electrospray (e-spray) method.To fabricate the red phosphor film, the optimum amount of phosphor is dispersed in a silicon binder to form a red phosphor paste. The AIS/ZS QDs are mixed with dimethylformamide (DMF), toluene, and poly(methyl methacrylate) (PMMA) for the e-spray coating. The substrates are spin-coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to fabricate a conductive surface. The CRI of the white LEDs is improved through inserting the red phosphor film between the QD layer and the glass substrate. Furthermore, the light intensities of the multi-layered phosphor films are enhanced through changing the glass substrate to the SPDF. The correlated color temperatures (CCTs) vary as a function of the phosphor concentration in the phosphor paste. The optical properties of the yellowish-green AIS/ZS QDs and red (Sr,Ca)AlSiN3:Eu phosphors are characterized using photoluminescence (PL), and the multi-layered QD-phosphor films are measured using electroluminescence (EL) with an InGaN blue LED (λmax = 450 nm) at 60 mA.

  10. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  11. FAA Film Catalog.

    Science.gov (United States)

    Federal Aviation Administration (DOT), Washington, DC.

    Some 75 films from the U.S. Department of Transportation's Federal Aviation Administration are listed in this catalog. Topics dealt with include aerodynamics, airports, aviation history and careers, flying clubs, navigation and weather. Most of the films are 16mm sound and color productions. Filmstrips requiring a 35mm projector and phonograph or…

  12. What Is Film Phenomenology?

    NARCIS (Netherlands)

    Hanich, Julian; Ferencz-Flatz, Christian

    2016-01-01

    In this article Christian Ferencz-Flatz and I try to give an answer to the question what film phenomenology actually is. We proceed in three steps. First, we provide a survey of five different research practices within current film phenomenological writing: We call them excavation, explanation,

  13. Stabilized chromium oxide film

    Science.gov (United States)

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  14. On Teaching Ethnographic Film

    Science.gov (United States)

    Clarfield, Geoffrey

    2013-01-01

    The author of this article, a developmental anthropologist, illustrates how the instructor can use ethnographic films to enhance the study of anthropology and override notions about the scope and efficacy of Western intervention in the Third World, provided the instructor places such films in their proper historical and cultural context. He…

  15. Determining Film Art.

    Science.gov (United States)

    Bullis, Roger

    1974-01-01

    The criteria by which films can and should be analyzed as art are discussed in this paper. A triangular model of theme-form-content is presented with form given greater significance than is usually the case in film criticism. The form-content-theme synthesis is the process in which theme is made clear by means of form and content within an…

  16. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  17. "Fate: The short film"

    OpenAIRE

    Maya Quintana, Jennifer

    2014-01-01

    "Fate: The Short Film" is a four minute short film which reflects the idea that nobody can escape from the fate. It has a good picture and sound quality with an understandable message for all public and with the collaboration of actors, filmmaker, stylist, script advisor and media technician.

  18. Malaysian Cinema, Asian Film

    NARCIS (Netherlands)

    Heide, van der William

    2002-01-01

    This title series departs from traditional studies of national cinema by accentuating the intercultural and intertextual links between Malaysian films and Asian (as well as European and American) film practices. Using cross-cultural analysis, the author characterizes Malaysia as a pluralist society

  19. Abstract Film and Beyond.

    Science.gov (United States)

    Le Grice, Malcolm

    A theoretical and historical account of the main preoccupations of makers of abstract films is presented in this book. The book's scope includes discussion of nonrepresentational forms as well as examination of experiments in the manipulation of time in films. The ten chapters discuss the following topics: art and cinematography, the first…

  20. Protolytic carbon film technology

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; White, C.A.

    1996-04-01

    This paper presents a technique for the deposition of polyacrylonitrile (PAN) on virtually any surface allowing carbon film formation with only the caveat that the substrate must withstand carbonization temperatures of at least 600 degrees centigrade. The influence of processing conditions upon the structure and properties of the carbonized film is discussed. Electrical conductivity, microstructure, and morphology control are also described.

  1. Polarized emission from light-emitting electrochemical cells using uniaxially oriented polymer thin films of poly(9,9-dioctylfluorene-co-bithiophene)

    Science.gov (United States)

    Miyazaki, Masumi; Sakanoue, Tomo; Takenobu, Taishi

    2018-03-01

    Uniaxially oriented poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) films were prepared on rubbed polyimide substrates and applied to emitting layers of light-emitting electrochemical cells (LECs). The layered structure of the uniaxially oriented F8T2 film and ionic liquid electrolytes enabled us to demonstrate LEC operations with high anisotropic characteristics both in emission and charge transport. Polarized electroluminescence (EL) from electrochemically induced p-n junctions in the uniaxially oriented F8T2 was obtained. The dichroic ratios of EL were the same as those of photoluminescence, suggesting that the doping process into the oriented F8T2 did not interrupt the polymer ordering. This indicates the usefulness of the layered structure of the polymer/electrolyte for the fabrication of LECs based on highly oriented polymer films. In addition, uniaxially oriented F8T2 was found to show reduced threshold energy in optically pumped amplified spontaneous emission. These demonstrations suggest the advantage of uniaxially oriented polymer-based LECs for potential application in future electrically pumped lasers.

  2. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  3. Conceiving Landscape through Film

    DEFF Research Database (Denmark)

    Farsø, Mads; Munck Petersen, Rikke

    2015-01-01

    This article shows how the media of film can be integrated, explored and can add value to architectural design studios and practice. It elucidates how film may offer an alternative position in architecture, where landscapes and cities are thought, planned and developed in closer relation...... to their spatial and sensory effects on humans. It underscores that the film camera can work as a kind of amplifier of how we, with our bodies, perceive space and project space. In the “Landscape Film” Studio at University of Copenhagen the film medium was tested as a combined registration and design tool...... for a new Nature Park south of Copenhagen. The final studio films and designs show how resonate recordings of sound, time and a bodily presence may simulate an Einfühling that inspires an alternative architecture of relations: the ambient, the changeable and the volatile. They also emphasize that an ability...

  4. Film sheet cassette

    International Nuclear Information System (INIS)

    1981-01-01

    A novel film sheet cassette is described for handling CAT photographic films under daylight conditions and facilitating their imaging. A detailed description of the design and operation of the cassette is given together with appropriate illustrations. The resulting cassette is a low-cost unit which is easily constructed and yet provides a sure light-tight seal for the interior contents of the cassette. The individual resilient fingers on the light-trap permit the ready removal of the slide plate for taking pictures. The stippled, non-electrostatic surface of the pressure plate ensures an air layer and free slidability of the film for removal and withdrawal of the film sheet. The advantage of the daylight system is that a darkroom need not be used for inserting and removing the film in and out of the cassette resulting in a considerable time saving. (U.K.)

  5. IAEA film library

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1959-01-15

    Most of the scientific and technical films shown during the Second Geneva Conference for the Peaceful Uses of Atomic Energy were donated to IAEA by the producing countries at the end of the Conference. They will form the basic stock for the Agency's loan service intended to provide atomic energy institutions in Member States with film material. A detailed catalogue of the films, classified according to subject and giving conditions of loan or purchase, is now being prepared. In addition to this, information on all films produced in Member Countries dealing with the peaceful uses cf atomic energy is being assembled. The documentary information contained in the films in IAEA's possession relates to the following subjects: national programmes; nuclear physics; accelerators; plasma and fusion; reactors (power, research, material testing and experimental); prospecting and mining; ore dressing; metallurgy; production of fuel elements; treatment of irradiated fuel elements; protection against radiation; detection and counting; uses of radiation in medicine, biochemistry, agriculture and industry; industrial application of nuclear explosions. Most of the commentaries are in the language of the producing country. A few films are available in a choice of two languages. The films donated to the Agency total 82, two of which have been produced in Canada, 13 in France, one in India, one in Romania, one in Spain, 14 in the United Kingdom, one in the Union of South Africa, 47 in the United States of America and two in the USSR: they are mostly illustrations of papers presented at the Second Geneva Conference. In arranging for the circulation of scientific and technical films IAEA wishes to help meet some of the training and information needs of Member States. It is hoped that all organizations producing films on the peaceful uses of atomic energy will entrust copies to the IAEA with a view to their widest possible circulation. In the meantime, the Agency's films have been given

  6. IAEA film library

    International Nuclear Information System (INIS)

    1959-01-01

    Most of the scientific and technical films shown during the Second Geneva Conference for the Peaceful Uses of Atomic Energy were donated to IAEA by the producing countries at the end of the Conference. They will form the basic stock for the Agency's loan service intended to provide atomic energy institutions in Member States with film material. A detailed catalogue of the films, classified according to subject and giving conditions of loan or purchase, is now being prepared. In addition to this, information on all films produced in Member Countries dealing with the peaceful uses cf atomic energy is being assembled. The documentary information contained in the films in IAEA's possession relates to the following subjects: national programmes; nuclear physics; accelerators; plasma and fusion; reactors (power, research, material testing and experimental); prospecting and mining; ore dressing; metallurgy; production of fuel elements; treatment of irradiated fuel elements; protection against radiation; detection and counting; uses of radiation in medicine, biochemistry, agriculture and industry; industrial application of nuclear explosions. Most of the commentaries are in the language of the producing country. A few films are available in a choice of two languages. The films donated to the Agency total 82, two of which have been produced in Canada, 13 in France, one in India, one in Romania, one in Spain, 14 in the United Kingdom, one in the Union of South Africa, 47 in the United States of America and two in the USSR: they are mostly illustrations of papers presented at the Second Geneva Conference. In arranging for the circulation of scientific and technical films IAEA wishes to help meet some of the training and information needs of Member States. It is hoped that all organizations producing films on the peaceful uses of atomic energy will entrust copies to the IAEA with a view to their widest possible circulation. In the meantime, the Agency's films have been given

  7. Films Deliver: Teaching Creatively with Film.

    Science.gov (United States)

    Schillaci, Anthony, Ed.; Culkin, John M., Ed.

    The fifteen papers in this resource guide are grouped into four sections. Section one contains formulations of the basic rationale for screen education and descriptions of new concepts and approaches to film study. Section two presents a definition of the elements involved in filmmaking and viewing, and it describes several model programs which…

  8. Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

    Science.gov (United States)

    Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

    2016-12-01

    Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

  9. Process and apparatus for irradiating film, and irradiated film

    International Nuclear Information System (INIS)

    1981-01-01

    A process for irradiating film is described, which consists of passing the film through an electron irradiation zone having an electron reflection surface disposed behind and generally parallel to the film; and disposing within the irradiation zone adjacent the edges of the film a lateral reflection member for reflecting the electrons toward the reflection surface to further reflect the reflected electrons towards the adjacent edges of the film. (author)

  10. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  11. Intermetallic semiconducting films

    CERN Document Server

    Wieder, H H

    1970-01-01

    Intermetallic Semiconducting Films introduces the physics and technology of AшВv compound films. This material is a type of a polycrystalline semiconductor that is used for galvanomagnetic device applications. Such material has a high electron mobility that is ideal for generators and magnetoresistors. The book discusses the available references on the preparation and identification of the material. An assessment of its device applications and other possible use is also enumerated. The book describes the structures and physical parts of different films. A section of the book covers the three t

  12. X-ray film

    International Nuclear Information System (INIS)

    Arndt, U.W.; Gilmore, D.J.; Wonacott, A.J.

    1977-01-01

    The performance of film as an X-ray detector is discussed and its behaviour is compared with that of a perfect Poissonian detector. The efficiency of microdensitometry as a method of extracting the information recorded on the film is discussed. More emphasis is placed in the precision of microdensitometric measurements than on the more obvious characteristic of film speed. The effects of chemical fog and background on the precision of the measurements is considered and it is concluded that the final limit to precision is set by the chemical fog. (B.D.)

  13. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Martinez-Miranda, L. J. [Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)

    2000-05-22

    Modest thermal annealing to 600 degree sign C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5%-10%. We report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approx}15% due to the development of the nanocomposite structure. (c) 2000 American Institute of Physics.

  14. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; PROVENCIO,PAULA P.; OVERMYER,DONALD L.; SIMPSON,REGINA L.; MARTINEZ-MIRANDA,L.J.

    2000-01-27

    Modest thermal annealing to 600 C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5--10%. The authors report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approximately} 15% due to the development of the nanocomposite structure.

  15. FEMINIST FILM THEORY

    OpenAIRE

    Wijaya, Haris

    2015-01-01

    The developing of film industry has brought us into a complexity of art and business. If the first movie audiences were delighted to see that it was possible to record a moving scene on film; today we debate the desirability behind every movie, rather than just the possibility of capturing an image. Film has already become entertainment tool and communication media with quite powerful effect to influence people at the early 20th century. The problem that happens now is there are not many wome...

  16. Nopal cactus film

    Science.gov (United States)

    Toxqui-López, S.; Olivares-Pérez, A.; Fuentes-Tapia, I.; Conde-Cuatzo, María. G.

    2017-03-01

    Nopal mucilage potentially has certain properties required for the preparation biofilms which can be used as holographic replication recording medium. In this study, mucilage from nopal was extracted and characterized by its ability to form films under different concentration with polyvinyl alcohol. The transmission holographic diffraction gratings (master) were replicated into nopal films. The results showed good diffraction efficiencies. Mucilage from nopal could represent a good option for the development of films to replication holographic, owing to; its low cost and its compatibility with the environmental.

  17. Underwater 3D filming

    OpenAIRE

    Rinaldi, Roberto

    2014-01-01

    After an experimental phase of many years, 3D filming is now effective and successful. Improvements are still possible, but the film industry achieved memorable success on 3D movie’s box offices due to the overall quality of its products. Special environments such as space (“Gravity” ) and the underwater realm look perfect to be reproduced in 3D. “Filming in space” was possible in “Gravity” using special effects and computer graphic. The underwater realm is still difficult to be handled. Unde...

  18. Radiographic film digitizing devices

    International Nuclear Information System (INIS)

    McFee, W.H.

    1988-01-01

    Until recently, all film digitizing devices for use with teleradiology or picture archiving and communication systems used a video camera to capture an image of the radiograph for subsequent digitization. The development of film digitizers that use a laser beam to scan the film represents a significant advancement in digital technology, resulting in improved image quality compared with video scanners. This paper discusses differences in resolution, efficiency, reliability, and the cost between these two types of devices. The results of a modified receiver operating characteristic comparison study of a video scanner and a laser scanner manufactured by the same company are also discussed

  19. Film Scriptwriting: A Practical Manual.

    Science.gov (United States)

    Swain, Dwight V.

    Dealing with both documentary and feature films, this book is a guide to using particular tools and procedures in developing ideas and concepts for writing film scripts. Part one deals with the factual, or documentary, film and discusses the proposal outline, film treatment, sequence outline, shooting script, and narration writing. Part two…

  20. Discovery in Film, Book Two.

    Science.gov (United States)

    Gordon, Malcolm W.

    Approximately 80 16 millimeter (16mm) short films are reviewed in this introduction and guide which attempts to be comprehensive in touching the major areas and styles of 16mm films now being produced. An attempt is made to describe as carefully as possible the style and content of each film and suggest ways in which the films might be used. Films…

  1. Thin films for precision optics

    International Nuclear Information System (INIS)

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  2. Film and Visual Perception

    Science.gov (United States)

    Giltrow, David

    1978-01-01

    One practical method which development film makers can adopt to increase comprehension of important scenes is to eliminate extraneous background information by putting it out of focus, or by shooting against plain backgrounds. (Author/STS)

  3. Film documentaire, lecture documentarisante

    Directory of Open Access Journals (Sweden)

    Roger Odin

    2012-06-01

    Full Text Available Réfléchir sur la relation entre le cinéma et la réalité n’est pas, bien sûr, tenter de distinguer l’espace du documentaire de celui de la fiction, au point que l’opposition avec le film de fiction est devenu le critère de définition privilégié du film documentaire. Prenant acte l’existence, dans le espace de la lecture des films, d’une lecture documentaire ou, plus exactement, d’une lecture documentarisante, nous pensons qu’il y a un ensemble de films que s’affiche comme documentaire (tout le problème est précisément étudier comment s’effetue cet affichage.

  4. Fra bog til film

    DEFF Research Database (Denmark)

    Schepelern, Peter

    2010-01-01

    Efter en historisk oversigt over samspillet mellem film og litteratur i dansk film, opstilles en råkke begreber, som filmatiseringer kan analyseres ud fra. Der ses pa det litteråre vårks status — evt. som klassiker eller bestseller. Der ses pa de centrale filmatiseringsproblemer, forhold som pråger...... adaptionsprocessen fra bog til film. De kan opdeles dels i forhold, der udspringer af filmsprogets specifikke sys- tem, dels forhold, der udspringer af filmens status som massemedium. Den färste kategori er pråget af, at filmsproget generelt fremstiller handling snarere end refleksion, noget konkret snarere end...... noget abstrakt, en scene snarere end et resume og det ydre snarere det indre. Den anden kategori kan forklare filmens tilbäjelighed til åndring af forlågget, til forkortelse, forenkling og modernisering. Eksemplerne er en råkke centrale danske film/romaner...

  5. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Dudney, Nancy J.

    2008-01-01

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  6. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  7. Quantitative film radiography

    International Nuclear Information System (INIS)

    Devine, G.; Dobie, D.; Fugina, J.; Hernandez, J.; Logan, C.; Mohr, P.; Moss, R.; Schumacher, B.; Updike, E.; Weirup, D.

    1991-01-01

    We have developed a system of quantitative radiography in order to produce quantitative images displaying homogeneity of parts. The materials that we characterize are synthetic composites and may contain important subtle density variations not discernible by examining a raw film x-radiograph. In order to quantitatively interpret film radiographs, it is necessary to digitize, interpret, and display the images. Our integrated system of quantitative radiography displays accurate, high-resolution pseudo-color images in units of density. We characterize approximately 10,000 parts per year in hundreds of different configurations and compositions with this system. This report discusses: the method; film processor monitoring and control; verifying film and processor performance; and correction of scatter effects

  8. Min Morfars Film

    DEFF Research Database (Denmark)

    Juel, Henrik

    1957-01-01

    Reflektioner over filmhistoriebegrebet og gennemgang af konkrete filmoplevelser i 1957 og i nutiden med udgangspunkt i mødet med en gammel familiefilm. Reflektioner over valg af motiver i en social- og personhistorisk dateret film.......Reflektioner over filmhistoriebegrebet og gennemgang af konkrete filmoplevelser i 1957 og i nutiden med udgangspunkt i mødet med en gammel familiefilm. Reflektioner over valg af motiver i en social- og personhistorisk dateret film....

  9. Architecture and Film

    OpenAIRE

    Mohammad Javaheri, Saharnaz

    2016-01-01

    Film does not exist without architecture. In every movie that has ever been made throughout history, the cinematic image of architecture is embedded within the picture. Throughout my studies and research, I began to see that there is no director who can consciously or unconsciously deny the use of architectural elements in his or her movies. Architecture offers a strong profile to distinguish characters and story. In the early days, films were shot in streets surrounde...

  10. Anthropology of Film

    Directory of Open Access Journals (Sweden)

    Ivan Kovačević

    2017-08-01

    Full Text Available The second volume of the journal in 2017, which is part of the thematic issue, includes foreign films, and five of the eight papers contribute analyses of dystopian films. These are: A Clockwork Orange (1971, Westworld (1973, Gattaca (1997 The Lobster (2015 and Man and Chicken (2015. Aside from this thematic block, the first part of the thematic issue comprises the analyses of Miracolo a Milano (1951, Happiness (1998 and American Gangster (2007.

  11. Isodose curves through films

    International Nuclear Information System (INIS)

    Moura, A.M.S.; Campos, J.C.F. de; Scaff, L.A.M.; Val Kopacek, A.B. do

    1985-01-01

    Information about the beam profile of 4 MV X-rays through irradiation of radiographic films is presented. The films were irradiated in parallel to the central axis, within tissue-like phantom and in conditions of clinical application. The conclusion is that the method does not supply absolute values of percentage depth dose over points outside of beam bounds, but throughout the corrections it may be of great utility in radiation dosimetry. (Author) [pt

  12. Isodose curves through films

    Energy Technology Data Exchange (ETDEWEB)

    Moura, A.M.S.; Campos, J.C.F. de; Scaff, L.A.M.; Val Kopacek, A.B. do

    Information about the beam profile of 4 MV X-rays through irradiation of radiographic films is presented. The films were irradiated in parallel to the central axis, within tissue-like phantom and in conditions of clinical application. The conclusion is that the method does not supply absolute values of percentage depth dose over points outside of beam bounds, but throughout the corrections it may be of great utility in radiation dosimetry. (Author).

  13. Thin film tritium dosimetry

    Science.gov (United States)

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  14. Innovative polyimide film

    International Nuclear Information System (INIS)

    Yaro, L.

    1988-01-01

    This paper reports on a new type of polyimide film with a unique chemical structure. Developed using proprietary technology, Upilex features outstanding properties over a wide range of temperatures, and offers the following advantages over previously available polyimide film: ultra-high heat resistance, excellent cryogenic properties, high tensile strength and modulus, excellent radiation resistance, excellent weather resistance (ultraviolet), superior dimensional stability, excellent chemical resistance, low water absorption, and low gas permeability

  15. Equilibrium helium film in the thick film limit

    International Nuclear Information System (INIS)

    Klier, J.; Schletterer, F.; Leiderer, P.; Shikin, V.

    2003-01-01

    For the thickness of a liquid or solid quantum film, like liquid helium or solid hydrogen, there exist still open questions about how the film thickness develops in certain limits. One of these is the thick film limit, i.e., the crossover from the thick film to bulk. We have performed measurements in this range using the surface plasmon resonance technique and an evaporated Ag film deposited on glass as substrate. The thickness of the adsorbed helium film is varied by changing the distance h of the bulk reservoir to the surface of the substrate. In the limiting case, when h > 0, the film thickness approaches about 100 nm following the van der Waals law in the retarded regime. The film thickness and its dependence on h is precisely determined and theoretically modeled. The equilibrium film thickness behaviour is discussed in detail. The agreement between theory and experiment is very good

  16. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    Science.gov (United States)

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  17. Radiochromic film dosimetry

    International Nuclear Information System (INIS)

    Soares, Christopher G.

    2006-01-01

    The object of this paper is to give a new user some practical information on the use of radiochromic films for medical applications. While various aspects of radiochromic film dosimetry for medical applications have been covered in some detail in several other excellent review articles which have appeared in the last few years [Niroomand-Rad, A., Blackwell, C.R., Coursey, B.M., Gall, K.P., McLaughlin, W.L., Meigooni, A.S., Nath, R., Rodgers, J.E., Soares, C.G., 1998. Radiochromic dosimetry: recommendations of the AAPM Radiation Therapy Committee Task Group 55. Med. Phys. 25, 2093-2115; Dempsey, J.F., Low, D.A., Mutic, S., Markman, J., Kirov, A.S., Nussbaum, G.H., Williamson, J.F., 2000. Validation of a precision radiochromic film dosimetry system for quantitative two-dimensional imaging of acute exposure dose distributions. Med. Phys. 27, 2462-2475; Butson, M.J., Yu, P.K.N., Cheung, T., Metcalfe, P., 2003. Radiochromic film for medical radiation dosimetry. Mater. Sci. Eng. R41, 61-120], it is the intent of the present author to present material from a more user-oriented and practical standpoint. That is, how the films work will be stressed much less than how to make the films work well. The strength of radiochromic films is most evident in applications where there is a very high dose gradient and relatively high absorbed dose rates. These conditions are associated with brachytherapy applications, measurement of small fields, and at the edges (penumbra regions) of larger fields

  18. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  19. Film beyond boundaries: film, migrant narratives and other media

    OpenAIRE

    Anelise Reich Corseuil

    2006-01-01

    The articles here presented are representative of the debates about the various transformational aspects of film studies, fostering the discussion about the transformations and interactions between national and international narrative forms, the interrelations between film and literature, and film with other media. The critical perspectives here presented range from an emphasis on cultural materialism, dialogism, reception theory, deconstructionism, narrative studies to film aesthetics or fil...

  20. Filming eugenics: teaching the history of eugenics through film.

    Science.gov (United States)

    Ooten, Melissa; Trembanis, Sarah

    2007-01-01

    In teaching eugenics to undergraduate students and general public audiences, film should he considered as a provocative and fruitful medium that can generate important discussions about the intersections among eugenics, gender, class, race, and sexuality. This paper considers the use of two films, A Bill of Divorcement and The Lynchburg Story, as pedagogical tools for the history of eugenics. The authors provide background information on the films and suggestions for using the films to foster an active engagement with the historical eugenics movement.

  1. Gammel Sherlock Holmes-film fundet - igen

    DEFF Research Database (Denmark)

    Lauridsen, Palle Schantz

    2017-01-01

    Om genfunden af en forsvundet Sherlock Holmes-film fra 1911, produceret af Nordisk Films Kompagni......Om genfunden af en forsvundet Sherlock Holmes-film fra 1911, produceret af Nordisk Films Kompagni...

  2. Film Propaganda: Ikonografi Kekuasaan

    Directory of Open Access Journals (Sweden)

    Budi Irawanto

    2004-07-01

    Full Text Available As a modern technological invention cinema has numerous potentialities such as economic, social and political power. Fascist regimes as well as film corporations have employed cinema as a tool of propaganda to control and mobilize the masses for the sake of their power longevity. Moreover, the character of film itself is a perfect fascist medium which came from the network of proto-fascism of the twentieth century civilization. By using various genres of Indonesian cinema from different eras as a case study, this article argues that Indonesian propaganda films have monolithic representation which can be described as a cult of "bapakisme" (patronism, "kultur komando" (command culture, marginalisation of women' role in Indonesian revolutionary movement and demonization of progressive women organisation, and glorification of the role of Soeharto in Indonesian revolutionary movement.

  3. Interface Engineering and Morphology Study of Thin Film Organic-Inorganic Halide Perovskite Optoelectronic Devices

    Science.gov (United States)

    Meng, Lei

    Solar energy harvesting through photovoltaic conversion has gained great attention as a sustainable and environmentally friendly solution to meet the rapidly increasing global energy demand. Currently, the high cost of solar-cell technology limits its widespread use. This situation has generated considerable interest in developing alternative solar-cell technologies that reduce cost through the use of less expensive materials and processes. Perovskite solar cells provide a promising low-cost technology for harnessing this energy source. In Chapter two, a moisture-assist method is introduced and studied to facilitate grain growth of solution processed perovskite films. As an approach to achieve high-quality perovskite films, I anneal the precursor film in a humid environment (ambient air) to dramatically increase grain size, carrier mobility, and charge carrier lifetime, thus improving electrical and optical properties and enhancing photovoltaic performance. It is revealed that mild moisture has a positive effect on perovskite film formation, demonstrating perovskite solar cells with 17.1% power conversion efficiency. Later on, in Chapter four, an ultrathin flexible device delivering a PCE of 14.0% is introduced. The device is based on silver-mesh substrates exhibiting superior durability against mechanical bending. Due to their low energy of formation, organic lead iodide perovskites are also susceptible to degradation in moisture and air. The charge transport layer therefore plays a key role in protecting the perovskite photoactive layer from exposure to such environments, thus achieving highly stable perovskite-based photovoltaic cells. Although incorporating organic charge transport layers can provide high efficiencies and reduced hysteresis, concerns remain regarding device stability and the cost of fabrication. In this work, perovskite solar cells that have all solution-processed metal oxide charge transport layers were demonstrated. Stability has been

  4. Influence of film dimensions on film droplet formation.

    Science.gov (United States)

    Holmgren, Helene; Ljungström, Evert

    2012-02-01

    Aerosol particles may be generated from rupturing liquid films through a droplet formation mechanism. The present work was undertaken with the aim to throw some light on the influence of film dimensions on droplet formation with possible consequences for exhaled breath aerosol formation. The film droplet formation process was mimicked by using a purpose-built device, where fluid films were spanned across holes of known diameters. As the films burst, droplets were formed and the number and size distributions of the resulting droplets were determined. No general relation could be found between hole diameter and the number of droplets generated per unit surface area of fluid film. Averaged over all film sizes, a higher surface tension yielded higher concentrations of droplets. Surface tension did not influence the resulting droplet diameter, but it was found that smaller films generated smaller droplets. This study shows that small fluid films generate droplets as efficiently as large films, and that droplets may well be generated from films with diameters below 1 mm. This has implications for the formation of film droplets from reopening of closed airways because human terminal bronchioles are of similar dimensions. Thus, the results provide support for the earlier proposed mechanism where reopening of closed airways is one origin of exhaled particles.

  5. Buy, Borrow, or Steal? Film Access for Film Studies Students

    Science.gov (United States)

    Rodgers, Wendy

    2018-01-01

    Libraries offer a mix of options to serve the film studies curriculum: streaming video, DVDs on Reserve, and streaming DVDs through online classrooms. Some professors screen films and lend DVDs to students. But how do students obtain the films required for their courses? How would they prefer to do so? These are among the questions explored using…

  6. Radiographic film cassette unloading apparatus

    International Nuclear Information System (INIS)

    Stievenart, E.F.; Plessers, H.S.; Neujens, G.J.

    1980-01-01

    Apparatus for unloading cassettes, containing exposed radiographic films, has means for unfastening the cassettes, an inclined pathway for gravity feeding and rotating feed members (rollers or belts) to propel the films into the processor. (UK)

  7. Partnervalg på film

    DEFF Research Database (Denmark)

    Kramer, Mette

    2006-01-01

    Nye kognitions- og evolutionspsykologiske aspekter på kvinders filmpræferencer for romantiske film og melodramer......Nye kognitions- og evolutionspsykologiske aspekter på kvinders filmpræferencer for romantiske film og melodramer...

  8. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  9. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  10. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  11. Oxidation films morphology

    International Nuclear Information System (INIS)

    Paidassi, J.

    1960-01-01

    After studying the oxidation of several pure polyvalent metals (Fe, Cu, Mn, Ni, U) and of their oxides at high temperature and atmospheric pressure, the author suggests how to modify the usual representation of the oxide film (a piling of different oxide layers, homogeneous on a micrographic scale with a equi-axial crystallisation, free of mechanical tensions, with flat boundary surfaces) to have it nearer to reality. In this first part, the author exposes the study of the real micrographic structure of the oxidation film and gives examples of precipitation in the oxides during the cooling of the oxidised sample. (author) [fr

  12. Films and nursing education

    Directory of Open Access Journals (Sweden)

    María GABRIELA FELIPPA

    2016-01-01

    Full Text Available The purpose of this paper is to provide some ideas about the importance of film, with it’s audiovisual narrative, in the nursing education. The use of films during teaching gives the posibility to increase the construction of a professional view.The nursing carreer of Isalud University of Argentina is founded a sistematic work with cinematographic support. In this case are presented different ways of work with cinematographic support in a curricular space of Fundamentals of Nursing of the career of a professional Nurse of the Isalud University.

  13. Superconducting Electronic Film Structures

    Science.gov (United States)

    1991-02-14

    Segmuller, A., Cooper, E.I., Chisholm, M.F., Gupta, A. Shinde, S., and Laibowitz, R.B. Lanthanum gallate substrates for epitaxial high-T superconducting thin...M. F. Chisholm, A. Gupta, S. Shinde, and R. B. Laibowitz, " Lanthanum Gallate Substrates for Epitaxial High-T c Superconducting Thin Films," Appl...G. Forrester and J. Talvacchio, " Lanthanum Copper Oxide Buffer Layers for Growth of High-T c Superconductor Films," Disclosure No. RDS 90-065, filed

  14. Storyboarding an Animated Film

    DEFF Research Database (Denmark)

    Frølunde, Lisbeth

    2009-01-01

    This paper applies notions of transformation to the analysis of data on semiotic processes related to making an animated film. The data derives from a study conducted in an upper secondary school in Copenhagen with students (18 years old) participating in a week-long workshop. The paper applies...... the concept of transduction with a focus on film storyboards: how students transform ideas when working with different modes (audio, visual) of representation. Data includes discourse analysis of semiotic processes and texts, referring to Social Semiotics and the methodology of Mediated Discourse Analysis...

  15. Intellectual Video Filming

    DEFF Research Database (Denmark)

    Juel, Henrik

    in favour of worthy causes. However, it is also very rewarding to draw on the creativity, enthusiasm and rapidly improving technical skills of young students, and to guide them to use video equipment themselves for documentary, for philosophical film essays and intellectual debate. In the digital era......Like everyone else university students of the humanities are quite used to watching Hollywood productions and professional TV. It requires some didactic effort to redirect their eyes and ears away from the conventional mainstream style and on to new and challenging ways of using the film media...

  16. Superconducting oxypnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

    2012-07-01

    We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

  17. Mechanics of Thin Films

    Science.gov (United States)

    1992-02-06

    and the second geometry was that of squat cylinders (diameter 6.4 mm, height 6.4 mm). These two geometries were tested in thermal shock tests, and a...milder [13]. More recently, Lau, Rahman and stressa nce ntrati, tha n films of lmalla rat ve spc Delale calculated the free edge singularity for stress...thickness of 3 mm); the second geometry was that As an example of the shielding effect of thin films, we of squat cylinders (diameter 6.4 mm, height 6.4

  18. Den umulige film

    DEFF Research Database (Denmark)

    Moestrup, Steffen Damkjær

    2014-01-01

    Den smertelige Sorg og Glæde fuldender en lang og glorværdig karriere for danske Nils Malmros. Den er en yderst vellykket film, fordi den forbliver usentimental om en skæbnesvanger dag i instruktørens liv.......Den smertelige Sorg og Glæde fuldender en lang og glorværdig karriere for danske Nils Malmros. Den er en yderst vellykket film, fordi den forbliver usentimental om en skæbnesvanger dag i instruktørens liv....

  19. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  20. NMR characterization of thin films

    Science.gov (United States)

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.