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Sample records for film electroluminescent tfel

  1. Effect of Electric Field and Polarity on Light Emission in Metal-Insulator-Semiconductor Structure Thin-Film Electroluminescent Devices

    Science.gov (United States)

    Ohwaki, Jun-ichi; Kozawaguchi, Haruki; Tsujiyama, Bunjiro

    1983-01-01

    Changes in the emission intensities and spectra with applied electric fields in Metal-Insulator-Semiconductor (MIS) structure thin-film electroluminescent (TFEL) devices have been investigated using devices with stacked emitting layer structures, such as ITO/ZnS: Mn/ZnS: Tb/Sm2O3/Al. In MIS-TFEL devices, the emission distribution in the direction of the ZnS film thickness is nonhomogeneous. In particular, the emission intensity in the region near the ZnS-insulator interface increases with increasing applied voltage more than in the other region in the ZnS layer, when electrons exciting emission centers are accelerated from the insulator side. On the other hand, the emission is homogeneous at the opposite polarity. It is found that the emission color for stacked emitting layer MIS-TFEL devices can be modulated by changing the applied voltage.

  2. Microstructure and electroluminescent performance of chemical vapor deposited zinc sulfide doped with manganese films for integration in thin film electroluminescent devices

    Science.gov (United States)

    Topol, Anna Wanda

    Zinc sulfide (ZnS) doped with manganese (Mn), ZnS:Mn, is widely recognized as the brightest and most effective electroluminescent (EL) phosphor used in current thin film electroluminescent (TFEL) devices. ZnS acts as a host lattice for the luminescent activator, Mn, leading to a highly efficient yellow-orange EL emission, and resulting in a wide array of applications in monochrome, multi-color and full color displays. Although this wide band dap (3.7 eV) material can be prepared by several deposition techniques, the chemical vapor deposition (CVD) is the most promising for TFEL applications in terms of viable deposition rates, high thickness and composition uniformity, and excellent yield over large area panels. This study describes the development and optimization of a CVD ZnS:Mn process using diethylzinc [(C2H5)2Zn, DEZ], di-pi-cyclopentadienylmanganese [(C5H5)2Mn, CPMn], and hydrogen sulfide [H2S] as the chemical sources for, respectively, Zn, Mn, and S. The effects of key deposition parameters on resulting Film microstructure and performance are discussed, primarily in the context of identifying an optimized process window for best electroluminescence behavior. In particular, substrate temperature was observed to play a key role in the formation of high quality crystalline ZnS:Mn films leading to improved brightness and EL efficiency. Further investigations of the influence of temperature treatment on the structural characteristics and EL performance of the CVD ZnS:Mn film were carried out. In this study, the influence of post-deposition annealing both in-situ and ex-situ annealing processes, on chemical, structural, and electroluminescent characteristics of the phosphor layer are described. The material properties of the employed dielectric are among the key factors determining the performance, stability and reliability of the TFEL display and therefore, the choice of dielectric material for use in ACTFEL displays is crucial. In addition, the luminous

  3. Electroluminescence

    CERN Document Server

    Henisch, H K

    1962-01-01

    Electroluminescence deals with the multiplicity of forms related to electroluminescence phenomena. The book reviews some basic observations of electroluminescence, the Gudden-Pohl and Dechene effects, the electroluminescence phenomena in zinc sulfide phosphors, in silicon carbide, and in compounds composed of elements in groups III and V of the Periodic Table (such as gallium phosphide). The text also explains polarization of free charge carriers, the outline of junction breakdown theory, carrier recombination, and phosphor suspensions. The book describes the growth of zinc sulfide crystals (f

  4. Performance enhancement of ZnS:Mn thin film electroluminescent devices by combination of laser and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Koutsogeorgis, Demosthenes C., E-mail: demosthenes.koutsogeorgis@ntu.ac.u [School of Science and Technology, Displays Research Group, Nottingham Trent University, Nottingham NG11 8NS (United Kingdom); Cranton, Wayne M.; Ranson, Robert M.; Thomas, Clive B. [School of Science and Technology, Displays Research Group, Nottingham Trent University, Nottingham NG11 8NS (United Kingdom)

    2009-08-26

    The combination of laser and thermal annealing was investigated as a post-deposition process for enhancing the luminescent properties of RF-magnetron sputtered ZnS:Mn thin film electroluminescent devices (TFEL). Laser annealing of the uncoated phosphor layer was performed using KrF excimer 248 nm laser pulses of 20 ns under an argon overpressure of 10 bar to limit laser ablation. Single, double and triple irradiation was applied at 1.4 J/cm{sup 2}. Thermal annealing was performed in vacuum at 500 deg. C and 550 deg. C for 1 h. In this paper we are reporting the brightness-voltage characteristics of devices that have been subjected to all combinations of the two annealing techniques (i.e. laser, thermal, laser + thermal, thermal + laser and finally non-annealed devices). Also, a simple lifetime comparison is made between the best performing device (laser + thermal) and the industrial standard (thermal). The lifetime (time to half brightness) and brightness of the best performing device is found to be more than double compared to the industrial standard.

  5. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  6. Electroluminescence and cathodoluminescence from polyethylene and polypropylene films: Spectra reconstruction from elementary components and underlying mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, B. [Université de Toulouse, UPS, INP, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse (France); Teyssedre, G.; Laurent, C. [Université de Toulouse, UPS, INP, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, F-31062 Toulouse (France); CNRS, LAPLACE, F-31062 Toulouse (France)

    2016-01-14

    The mechanisms of electroluminescence from large band gap polymers used as insulation in electric components are still under debate. It becomes important to unravel the underlying physics of the emission because of increasing thermo-electric stress and a possible relationship between electroluminescence and field withstand. We report herein on the cathodoluminescence spectra of polyethylene and polypropylene films as a way to uncover the nature of its contributions to electroluminescence emission. It is shown that spectra from the two materials are structured around four elementary components, each of them being associated with a specific process contributing to the overall emission with different weights depending on excitation conditions and on materials. The cathodoluminescence and electroluminescence spectra of each material are reconstructed from the four spectral components and their relative contribution are discussed. It is shown that electroluminescence from polyethylene and polypropylene has the same origin pointing towards generic mechanisms in both.

  7. Electroluminescence and cathodoluminescence from polyethylene and polypropylene films: Spectra reconstruction from elementary components and underlying mechanisms

    Science.gov (United States)

    Qiao, B.; Teyssedre, G.; Laurent, C.

    2016-01-01

    The mechanisms of electroluminescence from large band gap polymers used as insulation in electric components are still under debate. It becomes important to unravel the underlying physics of the emission because of increasing thermo-electric stress and a possible relationship between electroluminescence and field withstand. We report herein on the cathodoluminescence spectra of polyethylene and polypropylene films as a way to uncover the nature of its contributions to electroluminescence emission. It is shown that spectra from the two materials are structured around four elementary components, each of them being associated with a specific process contributing to the overall emission with different weights depending on excitation conditions and on materials. The cathodoluminescence and electroluminescence spectra of each material are reconstructed from the four spectral components and their relative contribution are discussed. It is shown that electroluminescence from polyethylene and polypropylene has the same origin pointing towards generic mechanisms in both.

  8. DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, A; Aceves-Mijares, M [INAOE, Electronics Department, Apartado 51, Puebla, 72000 (Mexico); Barreto, J; DomInguez, C [Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC), Barcelona (Spain); Peralvarez, M; Garrido, B [EME, Departament d' Electronica, Universitat de Barcelona, MartI i Franques 1, 08028 Barcelona (Spain); Luna-Lopez, J A, E-mail: amorales@inaoep.mx [CIDS-BUAP, Apartado 1651, Puebla, Pue, 72000 (Mexico)

    2010-02-26

    Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 deg. C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths-across the SRO film- has been proposed to explain the EL behaviour in these devices.

  9. Organic electroluminescence

    CERN Document Server

    Kafafi, Zakya H

    2005-01-01

    Organic light-emitting diode(OLED) technology has achieved significant penetration in the commercial market for small, low-voltage and inexpensive displays. Present and future novel technologies based on OLEDs involve rigid and flexible flat panel displays, solid-state lighting, and lasers. Display applications may range from hand-held devices to large flat panel screens that can be rolled up or hung flat on a wall or a ceiling. Organic Electroluminescence gives an overview of the on-going research in the field of organic light-emitting materials and devices, covering the principles of electroluminescence in organic thin films, as well as recent trends, current applications, and future potential uses. The book begins by giving a background of organic electroluminescence in terms of history and basic principles. It offers details on the mechanism(s) of electroluminescence in thin organic films. It presentsin-depth discussions of the parameters that control the external electroluminescence quantum efficien...

  10. Synthesis and characterization of thin film electroluminescent devices all-prepared by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa 09790, D. F., México (Mexico); Bizarro, M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán 04510, Distrito Federal, México (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán 04510, Distrito Federal, México (Mexico)

    2013-12-02

    Alternating current thin film electroluminescent devices have been fabricated using aluminum-doped zinc oxide (ZnO:Al) as transparent conducting layer, aluminum oxide (Al{sub 2}O{sub 3}) as insulating layers, and manganese-doped zinc sulfide (ZnS:Mn) as electroluminescent layer. All these films were deposited by the ultrasonic spray pyrolysis technique at the same temperature (450°) on glass substrates, forming a standard MISIM (metal–insulator–semiconductor–insulator–metal) configuration. The electroluminescence of MISIM devices with a total thickness of ∼ 1330 nm was investigated by applying a sinusoidal voltage with a frequency of 10 kHz. The devices showed orange-emission spectra centered at approximately 570 nm, characteristic of {sup 4}T{sub 1} → {sup 6}A{sub 1} radiative transitions of Mn{sup 2+} ions in the ZnS host, with a sharp intensity increase upon increasing the root mean square voltage above a threshold of 25 V and a rapid saturation for voltages higher than 38 V. The electroluminescent emission of these MISIM structures can be observed with the naked eye under ambient illumination. - Highlights: • Thin film electroluminescent devices were fabricated by ultrasonic spray pyrolysis at 450 °C. • The electroluminescent devices were fabricated on glass substrates. • ZnO:Al was used as transparent conductive layer. • ZnS:Mn and Al{sub 2}O{sub 3} were used as phosphor and insulating layers, respectively. • The electroluminescent devices have a low threshold operation voltage.

  11. Blue electroluminescence of ZnSe thin film in an organic-inorganic heterostructures device

    Energy Technology Data Exchange (ETDEWEB)

    Yu Wenge [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China) and Changchun Institute of Optics and Fine Mechanics and Physics, CAS, Changchun 130021 (China) and Shenyang Institute of Aeronautical Engineering, Shenyang 110034 (China)]. E-mail: yu_wenge@hotmail.com; Xu Zheng [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China); Teng, Feng [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China); Yang Shengyi [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China); Hou Yanbing [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China); Qian Lei [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China); Qu Chong [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China); Quan Sanyu [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China); Xu Xurong [Institute of Optoelectronics, Beijing Jiaotong University, Beijing 100044 (China); Changchun Institute of Optics and Fine Mechanics and Physics, CAS, Changchun 130021 (China)

    2005-05-02

    Blue light emission of ZnSe thin film from the ZnSe/poly-(N-vinyl-carbazole) (PVK) heterostructures was obtained. The threshold voltage is about 10 V and the brightness of 12 cd/m{sup 2} was obtained at 17 V. From the electroluminescence (EL), the photoluminescence (PL), the transient electroluminescence and the dependence of EL intensity on the applied voltage and current, we attribute the EL of ZnSe to carrier injection and recombination. This new phenomenon not only opens a new mechanism of II-IV compounds in low voltage injection EL but also provides a new way of obtaining blue emission.

  12. Transport and electroluminescence mechanism in Au/(Si/SiO2)/P-Si film

    Institute of Scientific and Technical Information of China (English)

    ZHANG Kai-biao; MA Shu-yi; MA Zi-jun; CHEN Hai-xia

    2006-01-01

    The samples of Au/(Si/SiO2)/p-Si structure were fabricated by using the R.F magnetron sputtering technique.Its carrier transport and electroluminescence mechanism were studied from the I-V curves and EL spectra by using the Configuration Coordinate as a theoretical model.The result indicates that there are two defect centers in SiO2 films.The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.

  13. Electroluminescence and photoluminescence of conjugated polymer films prepared by plasma enhanced chemical vapor deposition of naphthalene

    CERN Document Server

    Rajabi, Mojtaaba; Firouzjah, Marzieh Abbasi; Hosseini, Seyed Iman; Shokri, Babak

    2012-01-01

    Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF Plasma Enhanced Chemical Vapor Deposition (PECVD) using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. The fabricated devices with structure of ITO/PEDOT:PSS/ plasma polymerized Naphthalene/Alq3/Al showed broadband Electroluminescence (EL) emission peaks with center at 535-550 nm. Using different structural and optical tests, connection between polymers chemical structure and optical properties under different plasma powers has been studied. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. Photoluminescence (PL) spectra of plasma polymers showed different excimerc ...

  14. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  15. Electroluminescence from Si/SiO2 films deposited on p-Si substrates

    Institute of Scientific and Technical Information of China (English)

    马书懿; 萧勇; 陈辉

    2002-01-01

    The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a verygood rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structureat a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra ofthe structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on ELspectra are studied systematically.

  16. Colour electroluminescence with end light-emitting from ZnO nanowire/polymer film

    Energy Technology Data Exchange (ETDEWEB)

    He Ying; Wang Junan [Institute of Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zhang Wenfei; Chen Xiaoban; Huang Zonghao; Gu Qiuwen [Department of Polymer Materials, School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China)], E-mail: yinghe@staff.shu.edu.cn

    2009-03-01

    The ZnO nanowires with polymer film were self-assembly grown on n-type (111) plane of the silicon substrate using polymer assisted complexing soft-template process through a simple polymer complexation and low-temperature oxidizing-sintering, which have smooth top and fine hexagonal columnar structure with average length of about 6 {mu}m and the diameter of about 40 nm. These columnar structured ZnO nanowires had strong near-band ultraviolet emission at {approx}383 nm and blue electrically driven emission at {approx} 400 nm with a relatively low turn-on voltage, as well as a typical diode characteristic property at room temperature. In particular, these structures, being of high aspect ratio and small tip radius of curvature, may possess a good amplified stimulated emission and lasing property. These results suggested a potential application of ZnO nanowire/polymer film as electroluminescence flat panel displays or illuminations in the future.

  17. Drift mobility measurements in a-C:H films by time-resolved electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Foulani, A

    2002-12-30

    Carrier transport mechanism has been studied in thin insulating hydrogenated amorphous carbon (a-C:H) films. The layers were prepared by plasma polymerization of methane (CH{sub 4}) at a frequency of 20 kHz. Electron mobility was derived from time-resolved luminescence experiments. Between the application of a rectangular voltage pulse and the first appearance of electroluminescence (EL) a time lag exists, which depends on the pulse height. Transit times are in the order of 10{sup -3} to {approx}10{sup -6} s in a voltage rabetween 10 and 25 V. And the estimated electron mobility varies accordingly from 8x10{sup -8} to {approx}10{sup -6} cm{sup 2}/(V s). The field dependence of the carriers mobility is characteristic of Poole-Frenkel-detrapping conduction model, and thus confirms the results obtained by dc experimental data.

  18. Kinetics of electroluminescence of thin-film emitters based on zinc sulfide at ultralow frequencies

    CERN Document Server

    Gurin, N T; Sabitov, O Y

    2002-01-01

    Paper presents the results of investigation into kinetics of luminescence instantaneous luminance of thin-film electroluminescent structures excited by 0.1-2 Hz frequency triangular sing-variable voltage. One detected two regions with time rise of instantaneous luminance and of current (slow and quick ones) to which corresponded various regions at field and charge dependences of instantaneous luminance and at other electrophysical characteristics. On the basis of solution of kinetic equation one derived time dependences of instantaneous luminance and of inner quantum yield. The results are explained by generation of space charges within luminophore layer followed by reduction of the efficient thickness of the layer and by variation of mechanism of excitation of luminescence centers

  19. The dependences of electroluminescent characteristics of ZnS:Mn thin films upon their device parameters

    Science.gov (United States)

    Sasakura, Hiroshi; Kobayashi, Hiroshi; Tanaka, Shosaku; Mita, Juro; Tanaka, Toshihiko; Nakayama, Hirofumi

    1981-11-01

    The dependences of brightness, emission efficiency η, average electric field EA, conduction current JA, and emission lifetime τ upon the device parameters such as film thickness, substrate temperature during evaporation, and Mn concentration have been systematically investigated in ZnS:Mn thin-film electroluminescent devices. The value of η increases rapidly with film thicknesses below 3000 Å but EA decreases slowly. These results can be explained by the increase of the crystallinity of the ZnS:Mn films. The value of η increases with the Mn concentration and reaches its maximum at about 0.45 wt %. At above this Mn concentration, η and τ decrease rapidly, EA increases, and JA decreases slowly. These results may be attributed to a decrease of hot electron energy and/or an increase of the nonradiative transition probability of the excited Mn centers. The brightness-voltage (B-V) hysteresis characteristic is observed in this Mn concentration region. This memory effect is also discussed.

  20. Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films.

    Science.gov (United States)

    Hu, Youfan; Zhang, Yan; Lin, Long; Ding, Yong; Zhu, Guang; Wang, Zhong Lin

    2012-07-11

    We present that the electroluminescence (EL) properties of Mg-doped p-type GaN thin films can be tuned by the piezo-phototronic effect via adjusting the minority carrier injection efficiency at the metal-semiconductor (M-S) interface by strain induced polarization charges. The device is a metal-semiconductor-metal structure of indium tin oxide (ITO)-GaN-ITO. Under different straining conditions, the changing trend of the transport properties of GaN films can be divided into two types, corresponding to the different c-axis orientations of the films. An extreme value was observed for the integral EL intensity under certain applied strain due to the adjusted minority carrier injection efficiency by piezoelectric charges introduced at the M-S interface. The external quantum efficiency of the blue EL at 430 nm was changed by 5.84% under different straining conditions, which is 1 order of magnitude larger than the change of the green peak at 540 nm. The results indicate that the piezo-phototronic effect has a larger impact on the shallow acceptor states related EL process than on the one related to the deep acceptor states in p-type GaN films. This study has great significance on the practical applications of GaN in optoelectronic devices under a working environment where mechanical deformation is unavoidable such as for flexible/printable light emitting diodes.

  1. Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films

    Institute of Scientific and Technical Information of China (English)

    李宏建; 彭景翠; 瞿述; 颜永红; 许雪梅; 赵楚军

    2002-01-01

    By using n-butylamine as a carbon resource, carbon film is deposited on the p-n porous silicon (PS) surface with aradio-frequency glow discharge plasma system. Raman spectra and infrared reflection (IR) spectra of the carbonfilms indicate that there are amine-group and hydrogen atoms therein. The IR spectra of the passivated PSsamples exhibit that the PS surfaces are mainly covered with Si-C, Si-N and Si-O bonds. Electroluminescence(EL) spectra show that the EL intensity of the passivated PS diodes increases greatly and the blueshift of theEL peak occurs compared with the diodes without treatment. Both of these are stable while the passivateddiodes are exposed to the air indoors. The I-V characteristics reveal that the passivated diodes have a smallerseries resistance and a lower onset voltage. The influence of the carbon film passivation on EL properties of PShas also been discussed. The results have proven that carbon film passivation is a good way to enhance the PSluminescent intensity and stability.

  2. The Study of Electroluminescence and Reliability of Polyimide Films in High DC Fields

    Directory of Open Access Journals (Sweden)

    Jiaqi LIN

    2015-11-01

    Full Text Available Electroluminescence (EL intensity of the polyimide (PI films was tested under dc high electric field by home-made experimental device. The results showed that the EL intensity of PI films increased along with the electric field. EL intensity is approximately to background intensity when the electric-field intensity was less than 2.00 MV/cm. EL intensity increases along with increasing the electric field when electric-field intensity greater than 2.00 MV/cm. When electric-field at 2.80 MV/cm, EL intensity increasing strongly suggests that the excitation process related to hot electrons accelerated by the field approaching a critical threshold. Meanwhile, this work elaborates a method to deal with identical samples get different experimental data by using Weibull distribution method, and the concept of the reliability was presented. The nine groups of EL experimental data were analyzed, and the result showed that the lifetime of mid-value (t = 164.9 min. Mid-value of the breakdown field is E = 2.76 MV/cm.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9694

  3. Properties of ZnS:Cu,Cl Thick Film Electroluminescent Devices by Screen Printing Method

    Energy Technology Data Exchange (ETDEWEB)

    Rho, J. S.; Yoo, S. H.; Chang, H. J. [Dankook University, Chonan (Korea)

    2001-06-01

    The ZnS:Cu,Cl thick film electroluminescent devices with the stacking type(separated with phosphors and insulator layers) and the composite type (mixed with phosphor and insulator materials) emission layers were fabricated on ITO/glass substrates by the screen printing methods. The optical and electrical properties were investigated as functions of applied voltages and frequencies. In the stacking type, the luminance was about 58 cd/m{sup 2} at the applied voltage of 400Hz, 200V and increased to 420 cd/m{sup 2} with increasing the frequency to 30Hz. For the composite type devices, the threshold voltage was 45V and the maximum luminance was 670 cd/m{sup 2} at the driving condition of 200V, 30Hz. The value of luminance of the composite type device showed 1.5 times higher than that of stacking type device. The main emission peak was 512 nm of bluish-green color at 1 Hz frequency below and shifted to 452 nm in the driving frequency over 5Hz showing the blue emission color. There were no distinct differences of the main emission peaks and color coordinate for both samples. (author). 13 refs., 8 figs.

  4. Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

    Science.gov (United States)

    Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

    2014-06-01

    Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

  5. A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

    Institute of Scientific and Technical Information of China (English)

    Ma Shu-Yi; Chen Hui; Xiao Yong; Ma Zi-Jun; Sun Ai-Min

    2004-01-01

    Ge/SiO2 and Si/SiO2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650-660 nm. The EL mechanisms of the structures are discussed.

  6. PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

    Institute of Scientific and Technical Information of China (English)

    Xu Jun; Ma Tian-fu; Li Wei; Chen Kun-ji; Li Zhi-feng; Lu Wei

    2000-01-01

    Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown byusing an organic source, xylene (C8H{10), instead of methane(CH4) in a conventional plasma enhanced chemical vapor depositionsystem. The optical band gap of these samples was increased gradually bychanging the gas ratio of C8H10 to SiH4. The film with highoptical band gap was soft and polymer-like and intense photoluminescencewere obtained. Room temperature electro-luminescence was also achievedwith peak energy at 2.05 eV (600 nm) for the a-SiC:H film withoptical band gap of 3.2 eV.1.8mm

  7. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    Institute of Scientific and Technical Information of China (English)

    冉广照; 孙永科; 陈源; 戴伦; 崔晓明; 张伯蕊; 乔永平; 马振昌; 宗婉华; 秦国刚

    2003-01-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  8. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    Science.gov (United States)

    Ran, Guang-Zhao; Sun, Yong-Ke; Chen, Yuan; Dai, Lun; Cui, Xiao-Ming; Zhang, Bo-Rui; Qiao, Yong-Ping; Ma, Zhen-Chang; Zong, Wan-Hua; Qin, Guo-Gang

    2003-02-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0 eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48 eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97 eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  9. Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

    Institute of Scientific and Technical Information of China (English)

    Hongjian Li (李宏建); Baiyun Huang (黄伯云); Danqing Yi (易丹青); Haoyang Gui (崔昊杨); Jingcui Peng (彭景翠)

    2003-01-01

    We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline.Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600 - 803 nm with a peak at 690 nm.

  10. Effects of ZnS:Mn/AlN multilayer structure on luminescent properties of nanostructured thin-film EL device

    Science.gov (United States)

    Adachi, Daisuke; Takei, Kohei; Toyama, Toshihiko; Okamoto, Hiroaki

    2007-10-01

    Effects of ZnS:Mn/AlN multilayer structure on luminescent properties of nanostructured (NS) thin-film electroluminescent (TFEL) device of which emission layer is a multilayer composed with ZnS:Mn layers and 0.7-nm-thick AlN interlayers were studied. The bandgap widening and the increased PL efficiency of Mn 2+ 3d-3d transitions with a decrease in the ZnS:Mn single-layer thickness down to 5 nm were observed, which is ascribed to quantum confinement effects. Meanwhile, the multilayer with 2-nm-thick ZnS:Mn single-layers shows a drop of PL efficiency, indicating the presence of defective region just on AlN. The tendency of the luminous efficiency of the NS-TFEL device against the ZnS:Mn single-layer thickness is similar to the tendency found in the PL efficiency, indicating the importance of the ZnS:Mn/AlN interface for the device performance.

  11. Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method

    Directory of Open Access Journals (Sweden)

    C. Panatarani

    2016-02-01

    Full Text Available ZnO thin films were fabricated by spray pyrolysis (SP method with p-ZnO : N/n-ZnO:Ga/ITO structure. The X-ray results show that the deposited films have hexagonal wurtzite structure. The EDS results observed that the composition of Ga in ZnO:Ga and N in ZnO:N was 3.73% and 27.73% respectively. The photoluminescence (PL with excitation wave length of 260 nm shows that ZnO:Ga and ZnO:N films emitted UV emission at ∼393 and ∼388 nm, respectively and the films resistivity was 7.12 and 12.80 Ohm-cm respectively. The electroluminescence of the p-ZnO : N/n-ZnO:Ga/ITO structure was obtained by applying forward bias of 5 volt with 30 mA current, resulting in a 3.35 volt threshold bias with the peak electroluminescence in UV-blue range.

  12. Excimer-like electroluminescence from thin films of switchable supermolecular anthracene-based rotaxanes

    NARCIS (Netherlands)

    Giro, G.; Cocchi, M.; Fattori, V.; Gadret, G.; Ruani, G.; Murgia, M.; Cavallini, M.; Biscarini, F.; Zamboni, R.; Loontjens, T.; Thies, J.; Leigh, D.A.; Morales, A.F.

    2001-01-01

    Thin films of 10-[3,5-di(terbutyl)phenoxy]decyl-2-({2-[(9-anthrylcarbonyl)amino]acetyl}amino) acetate (ANTPEP), the thread of an anthracene-based rotaxane, have been processed by the spin coating technique in a polycarbonate (PC) matrix. A single layer organic light emitting diode (OLED) has been de

  13. Thickness effects of SiO xN y interlayer inserted between BaTiO 3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices

    Science.gov (United States)

    Song, M. H.; Lee, Y. H.; Hahn, T. S.; Oh, M. H.; Yoon, K. H.

    1996-09-01

    We investigated the effects of a SiO xN y interlayer on a thin film electroluminescent device, inserted between an amorphous BaTiO 3 thin film and a ZnS:Mn phosphor layer. The effects on the thin film electroluminescent device was studied as a function of the thickness of the interlayer. We found that the introduction of the interlayer affected the growth behavior of the phosphor layer. With increasing thickness of the interlayer, the average grain size and the crystallinity of the phosphor layer was improved. The turn-on voltage of the electroluminescent device increased, and the saturation brightness slightly decreased with increasing interlayer thickness. In the case of the TFELD without the interlayer, Poole-Frenkel conduction was observed in the low dc field region, the devices with the interlayer exhibited effective electron tunneling from interface traps. The efficiency of the devices increased with increasing interlayer thickness.

  14. Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

    Science.gov (United States)

    Jeong, Junseok; Choi, Ji Eun; Kim, Yong-Jin; Hwang, Sunyong; Kim, Sung Kyu; Kim, Jong Kyu; Jeong, Hu Young; Hong, Young Joon

    2016-09-01

    Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p-n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

  15. Osmium Complexes Useful in the Preparation of Metal Thin Film and Highly Efficient Electroluminescent Devices

    Institute of Scientific and Technical Information of China (English)

    Yun Chi

    2004-01-01

    Treatment of β-diketone ligand, such as hfacH (hexafluoroacetylacetone), with Os3(CO)12 in a stainless steel autoclave at elevated temperature afforded the corresponding mononuclear osmium complex [Os(CO)3(hfac)(tfa)] (1) in good yield. This complex is highly volatile and displays moderate stability at the higher temperatures; thus, it can be utilized for depositing metal thin-film material with overall quality comparable or better than those deposited using the commercially available chemical reagents. Moreover, combination of Os3(CO)12 with another class of chelate ligand such as 3-trifluoromethyl-5-(2-pyridyl) pyrazole (ppz)H gave formation of the Os(H) dicarbonyl complex [Os(CO)2(ppz)2] (2). This osmium complex shows blue phosphorescence at room temperature, which is characteristic for the 3ππ* emission with vibronic progressions at 430,457 and 480 nm. The remarkable photophysical properties were rationalized by a combination of π electron accepting CO ligand, relative ppz orientation and heavy-atom enhanced spin-orbit coupling effects. Related chemical transformations that afforded other useful luminescent Os complexes are presented.

  16. The dependence of the polycrystalline structure and electroluminescent properties of ZnS:Mn deposited on Y 2O 3 films on thickness

    Science.gov (United States)

    Nakanishi, Y.; Fukuda, Y.; Hatanaka, Y.; Shimaoka, G.

    1991-06-01

    The dependence of polycrystalline structure and electroluminescent (EL) properties of ZnS:Mn on the thickness of ZnS:Mn thin films deposited on Y 2O 3 films at 200°C by electron-beam evaporation has been investigated. RHEED experiments showed that the Y 2O 3 film deposited on a transparent electrode at 200°C had a fiber structure with [100] orientation. It was found from RHEED observation that ZnS:Mn films with thickness below about 500Ådeposited over the Y 2O 3 film had a zincblende structure which changed to a fiber structure with [111] orientation as the film thickness increased. The brightness and the efficiency of ZnS:Mn thin film EL devices with a thickness below about 1000Åwere lower than those of EL devices with a thickness above 1000Å. These effects are attributed to a very poor crystallinity in the transition region from [100] to [111] orientation during the early stages of growth.

  17. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Hui-Ying Li

    2015-02-01

    Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

  18. Hybrid electroluminescent devices

    Science.gov (United States)

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  19. Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices%聚合物电致发光器件中用类金刚石碳膜增强电子注入

    Institute of Scientific and Technical Information of China (English)

    李宏建; 闫玲玲; 黄伯云; 易丹青; 胡锦; 何英旋; 彭景翠

    2006-01-01

    A diamond-like carbon (DLC) film is deposited as an electron injection layer between the polymer light-emitting layer (MEH-PPV) and aluminum (Al) cathode electrode in polymer electroluminescence devices (PLEDs) using a radio frequency plasma deposition system. The source material of the DLC is n-butylamine. The devices consist of indium tin oxide (ITO)/MEH-PPV/DLC/Al. Electron injection properties are investigated through I-V characteristics, and the mechanism of electron injection enhancement due to a thin DLC layer has been studied. It is found that: (1) a DLC layer thinner than 1. 0nm leads to a higher turn-on voltage and decreased electroluminescent (EL) efficiency; (2) a 5.0nm DLC layer significantly enhances the electron injection and re sults in the lowest turn-on voltage and the highest EL efficiency; (3) DLC layer that exceeds 5.0nm results in poor device performance; and(4) EL emission can hardly be detected when the layer exceeds 10.0nm. The properties ofITO/MEH-PPV/DLC/Al and ITO/MEH-PPV/LiF/Al are investigated comparatively.%用正丁胺作碳源,采用射频辉光等离子系统制备类金刚石碳膜(DLC),沉积在聚合物发光器件中的发光层(MEH-PPV)和铝(Al)阴极间作电子注入层.制备了结构为ITO/MEH-PPV/DLC/Al的不同DLC厚度的器件,测量了器件的I-V特性、亮度及效率,研究了DLC层对器件电子注入性能影响的机制.结果表明:当DLC厚度小于1.0nm时,其器件有较ITO/MEH-PPV/Al高的启动电压和低的发光效率;当DLC厚度在1.0~5.0nm之间时,器件的性能随着DLC厚度增加而变好;当DLC厚度为5.0nm时,器件具有最低的启动电压与最高的发光效率;当DLC厚度继续增加时,器件的性能随着DLC厚度增加而变差.并对ITO/MEH-PPV/DLC/Al和ITO/MEH-PPV/LiF/Al的器件性能进行了比较研究.

  20. Liquid crystalline networks for electroluminescent displays

    CERN Document Server

    Contoret, A E A

    2001-01-01

    This work presents the first low molar mass organic electroluminescent (EL) material to form a nematic glass and then emit plane-polarised light from the vitrified state on application of an electric field. Photocrosslinkable molecules are also discussed which form insoluble films on illumination with ultra-violet light. This approach combines the ease of deposition of small molecules with the robustness and stability of polymers, allowing simple fabrication of multi-layer EL devices and photo-patterning. A range of conjugated low molar-mass molecules are considered, containing the anthracene, perylene and fluorene cores, with the aims of producing a general recipe for efficient EL, based on ordered, stable nematics at room temperature. Many physical properties are compared and molecular mechanics modeling is used to represent molecular geometries. An acrylate and several diene photo-polymerisable derivatives of the fluorenes undergo photo-crosslinking. Infrared and photoluminescence spectroscopy is used to e...

  1. Fabrication of Green Electroluminescent Devices

    Institute of Scientific and Technical Information of China (English)

    高德青; 黄春辉; 奎热西; 刘凤琴

    2002-01-01

    A gadolinium ternary complex, tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) (2, 2′-dipyridyl) gadolinium Gd(PMIP)3(Bipy) was synthesized and used as a light emitting material in the organic electroluminescent devices. The devices exhibited the green electroluminescent (EL) emission peaking at 513 nm, originating from the Gd(PMIP)3(Bipy). By improving the configuration, the device with a structure of ITO/poly(N-vinylcarbazole) (PVK) (40 nm)/Gd(PMIP)3(Bipy) (40 nm)/tris (8-hydroxyquinoline) aluminum (ALQ) (40 nm)/Mg∶Ag(200 nm)/Ag(100 nm) showed higher performance and a maximum luminance of 340 cd*m-2 at 18 V.

  2. Visible electroluminescence on FTO/thin SRO/n-Si structures

    Energy Technology Data Exchange (ETDEWEB)

    Leyva, K.M., E-mail: kmonfil@inaoep.mx [Department of Electronics, INAOE, Apdo., 51, Puebla, 72000 Pue. (Mexico); Aceves-Mijares, M.; Yu, Z. [Department of Electronics, INAOE, Apdo., 51, Puebla, 72000 Pue. (Mexico); Flores, F. [CDIS-ICUAP-BUAP, Apdo. 1651, Puebla, 72000 Pue. (Mexico); Morales-Sanchez, A. [Department of Electronics, INAOE, Apdo., 51, Puebla, 72000 Pue. (Mexico); Alcantara, S. [CDIS-ICUAP-BUAP, Apdo. 1651, Puebla, 72000 Pue. (Mexico)

    2010-10-25

    Photoluminescence (PL) and electroluminescence (EL) of silicon rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) have been researched. SRO films emit an intense PL band between 550 and 850 nm. EL was studied using fluorine-doped tin oxide (FTO)/thin SRO/n-Si structures. Intense and stable electroluminescence was observed under reverse bias. EL is observed between 400 and 900 nm with two main peaks around 450 and 600 nm. EL was related to charge injection through conductive paths and radiative recombination between traps or defect levels.

  3. Organic solution-processible electroluminescent molecular glasses for non-doped standard red OLEDs with electrically stable chromaticity

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Xiaoman; Zuo, Weiwei; Liu, Yingliang, E-mail: liuylxn@sohu.com; Zhang, Zhenru; Zeng, Cen; Xu, Shengang; Cao, Shaokui, E-mail: caoshaokui@zzu.edu.cn

    2015-10-15

    Highlights: • The D–A–D electroluminescent molecular glasses are synthesized. • Non-doped red electroluminescent film is fabricated by spin-coating. • Red OLED shows stable wavelength, luminous efficiency and chromaticity. • CIE1931 coordinate is in accord with standard red light in PAL system. - Abstract: Organic light-emitting molecular glasses (OEMGs) are synthesized through the introduction of nonplanar donor and branched aliphatic chain into electroluminescent emitters. The target OEMGs are characterized by {sup 1}H NMR, {sup 13}C NMR, IR, UV–vis and fluorescent spectra as well as elemental analysis, TG and DSC. The results indicated that the optical, electrochemical and electroluminescent properties of OEMGs are adjusted successfully by the replacement of electron-donating group. The non-doped OLED device with a standard red electroluminescent emission is achieved by spin-coating the THF solution of OEMG with a triphenylamine moiety. This non-doped red OLED device takes on an electrically stable electroluminescent performance, including the stable maximum electroluminescent wavelength of 640 nm, the stable luminous efficiency of 2.4 cd/A and the stable CIE1931 coordinate of (x, y) = (0.64, 0.35), which is basically in accord with the CIE1931 coordinate (x, y) = (0.64, 0.33) of standard red light in PAL system.

  4. Dispenser printed electroluminescent lamps on textiles for smart fabric applications

    Science.gov (United States)

    de Vos, Marc; Torah, Russel; Tudor, John

    2016-04-01

    Flexible electroluminescent (EL) lamps are fabricated onto woven textiles using a novel dispenser printing process. Dispenser printing utilizes pressurized air to deposit ink onto a substrate through a syringe and nozzle. This work demonstrates the first use of this technology to fabricate EL lamps. The luminance of the dispenser printed EL lamps is compared to screen-printed EL lamps, both printed on textile, and also commercial EL lamps on polyurethane film. The dispenser printed lamps are shown to have a 1.5 times higher luminance than the best performing commercially available lamp, and have a comparable performance to the screen-printed lamps.

  5. Materials for Powder-Based AC-Electroluminescence

    Directory of Open Access Journals (Sweden)

    Hubert Schulze Dieckhoff

    2010-02-01

    Full Text Available At present, thick film (powder based alternating current electroluminescence (AC-EL is the only technology available for the fabrication of large area, laterally structured and coloured light sources by simple printing techniques. Substrates for printing may be based on flexible polymers or glass, so the final devices can take up a huge variety of shapes. After an introduction of the underlying physics and chemistry, the review highlights the technical progress behind this development, concentrating on luminescent and dielectric materials used. Limitations of the available materials as well as room for further improvement are also discussed.

  6. Topographic analysis of silicon nanoparticles-based electroluminescent devices

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, A., E-mail: amorales@inaoep.mx [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico); Barreto, J.; Dominguez, C. [Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC), Barcelona (Spain); Aceves, M.; Leyva, K.M. [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico); Luna-Lopez, J.A.; Carrillo, J. [CIDS-BUAP, Apdo. 1651, Puebla 72000 (Mexico); Pedraza, J. [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico)

    2010-10-25

    Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.

  7. Efficient electroluminescence from a perylenediimide fluorophore obtained from a simple solution processed OLED

    Energy Technology Data Exchange (ETDEWEB)

    Cespedes-Guirao, F J; Fernandez-Lazaro, F; Sastre-Santos, A [Division de Quimica Organica, Instituto de Bioingenieria, Universidad Miguel Hernandez, Avda. de la Universidad, s/n, Elche 03202 (Spain); Garcia-Santamaria, S; Bolink, H J [Instituto de Ciencia Molecular, Universidad de Valencia, PO Box 22085, ES-46071 Valencia (Spain)], E-mail: henk.bolink@uv.es, E-mail: asastre@umh.es, E-mail: fdofdez@umh.es

    2009-05-21

    Simple solution processed organic light emitting diodes are used to screen the performance of two types of highly efficient, narrow band red emitting fluorescent perylenediimides (PDIs). PDIs substituted at the diimide positions seem to form aggregates in the thin film architecture as evidenced by the shifted electroluminescent spectrum. When substituted on the bay position and when used both as the emitting and the electron transporting specie, bright electroluminescence with a narrow width around 610 nm reaching 500 cd m{sup -2} at moderate voltages was observed, demonstrating the usefulness of these fluorophores for OLED applications.

  8. Organic Thin Film Electroluminescent Passive Matrix Display

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Long life green-emitting matrix display based on organic light-emitting diode is reported. The pixel number is 96×60, equivalent pixel size 0.4×0.4 mm2, and the pixel gap 0.1 mm. An image with no crosstalk between pixels is obtained. The average luminance of these pixels at duty cycle of 1/64 is 100 cd/m2, and the power consumption is 0.6 W. The dark room contrast of 1:100 is achieved without using a polarization filter.

  9. Green-Light Electroluminescence of Conjugated Copolymer Containing p-Phenylene-ethynylene and Oxadiazole

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The title copolymer(PDEBO) was synthesized. The thermal characteristics of the polymer were determined by means of DSC and TGA, revealing that the polymer has a good thermal stability. The X-ray diffraction measurements of the thin films showed that the polymer is disorder. Electroluminescence(EL) in the green region of the spectrum with a maximum at 500 nm was observed from the polymer films sandwiched between indium-tin-oxide and an Al electrode.

  10. Electroluminescence in BaFCl single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Somaiah, K.; Paracchini, C.

    1987-06-01

    A study of electroluminescence in BaFCl single crystals as a function of temperature is reported. At an excitation voltage of 5 kV, electroluminescent intensity, which is feeble at room temperature, is shown to increase with decreasing temperature. The increase is rapid between 250 K and 175 K and levels off as 80 K is approached. A tentative explanation, in the light of x-ray induced luminescence, is offered. (U.K.).

  11. 陷阱浓度对ZnS:Mn薄膜电致发光临界浓度和亮度的影响%Influence fo Trap Concentration on Critical Concentration and Brightness of ZnS:Mn Thin Film Electroluminescence

    Institute of Scientific and Technical Information of China (English)

    于光辉; 王永生; 何大伟; 徐征; 刘宏利; 徐叙

    2001-01-01

    In this article the influence of trap concentration on thecritical concentration of Mn centers in ZnS :Mn thin film electroluminescence and the change of brightness with the concetration of Mn centers under different trap concentrations have been calculated. The results indicate that by reducing the trap concentraiton the critical concentration can be increased notably and the brightness also can be increased.%本文计算了陷阱浓度对ZnS:Mn薄膜电致发光Mn中心临界浓度的影响,在不同的陷阱浓度下,计算了发光亮度随发光中心浓度的变化。计算结果表明,降低陷阱的浓度可以显著地提高临界浓度,并且发光亮度也随之增大。

  12. Prosress in long wavelength emission in fluorene-based electroluminescent blue materials

    Institute of Scientific and Technical Information of China (English)

    JIANG HongJi; WAN JunHua; HUANG Wei

    2008-01-01

    On account of the advantages of organic electroluminescent materials compared with their inorganic counterparts, the development of organic electroluminescent materials is one of the hot areas of the optoelectronic materials. Fluorene and its derivatives, which have an aromatic biphenyl structure with a wide energy gap in the backbones and high luminescent efficiency, have drawn much attention of material chemists and device physicists. However, one drawback of fluorene-based electroluminescent blue materials is that there is an occurrence of long wavelength emission after annealing the films in air or after operating organic light-emitting diodes for a long time. To clarify the origin of this long wavelength emission, the scientists at home and abroad have put forward all kinds of correlative explanations. Among the scientists, some thought it was caused by excimer-related species, while some others claimed that it was caused by the fluorenone of photooxdized fluorene. The corresponding solutions to this problem have also been proposed and the problem has been partially resolved in some degree. The present review summarizes and analyzes the progress made on the origin of long wavelength emission in fluorene-based electroluminescent blue materials at home and abroad in the past few years. Some issues to be addressed and hotspots to be further investigated are also presented and discussed.

  13. Progress in long wavelength emission in fluorene-based electroluminescent blue materials

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    On account of the advantages of organic electroluminescent materials compared with their inorganic counterparts,the development of organic electroluminescent materials is one of the hot areas of the optoelectronic materials.Fluorene and its derivatives,which have an aromatic biphenyl structure with a wide energy gap in the backbones and high luminescent efficiency,have drawn much attention of ma-terial chemists and device physicists.However,one drawback of fluorene-based electroluminescent blue materials is that there is an occurrence of long wavelength emission after annealing the films in air or after operating organic light-emitting diodes for a long time.To clarify the origin of this long wave-length emission,the scientists at home and abroad have put forward all kinds of correlative explana-tions.Among the scientists,some thought it was caused by excimer-related species,while some others claimed that it was caused by the fluorenone of photooxdized fluorene.The corresponding solutions to this problem have also been proposed and the problem has been partially resolved in some degree.The present review summarizes and analyzes the progress made on the origin of long wavelength emission in fluorene-based electroluminescent blue materials at home and abroad in the past few years.Some issues to be addressed and hotspots to be further investigated are also presented and discussed.

  14. Quantitative description of electroluminescence images of polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Seeland, Marco; Roesch, Roland; Hoppe, Harald [Institute of Physics, Ilmenau University of Technology, Ilmenau (Germany)

    2011-07-01

    We present a quantitative description of electroluminescence images obtained on organic solar cells, which is based on a device modeling employing a network of interconnected microdiodes. The equivalent circuit network model takes interface and bulk resistances as well as the sheet resistance of the transparent electrode into account. The application of this model allows direct calculation of the lateral current and voltage distribution as well as determination of internal resistances and the sheet resistance of the higher resistive electrode. Furthermore, we have extended the microdiode-model to also describe and predict current voltage characteristics for devices under illumination. Finally the local nature of this description enables important conclusions concerning the geometry dependent performance of thin film solar cells.

  15. Electroluminescence Gray Scale Display Driving Method and Circuit

    Institute of Scientific and Technical Information of China (English)

    KANG Hao; LI Rong-yu; YANG Xin

    2007-01-01

    The increasing use of color terminals for personal computers has raised a demand for video graphic adapter(VGA)-format panel displays. Since only monochrome(ZnS∶Mn) electroluminescence(EL) displays of suitable size and speed are available, lack of colors has to be replaced by grayscale in the first place. There are two basic driving methods to achieve grayscale in thin-film EL displays: pulse amplitude modulation(PAM) method and pulse width modulation(PWM) method. But there are serious disadvantages of the two traditional methods. For the former method, the high voltage PAM ICs are too expensive to produce the grayscale EL display in bulks and the driver integrated circuit(IC) is complex. Though the PWM method has good grayscale display quality, the hardware implementation is too complex. A new driving method with which the width and the amplitude of the pulse can be modulated and simultaneously the challenge can be solved efficaciously is presented.

  16. Organic electroluminescent devices having improved light extraction

    Science.gov (United States)

    Shiang, Joseph John

    2007-07-17

    Organic electroluminescent devices having improved light extraction include a light-scattering medium disposed adjacent thereto. The light-scattering medium has a light scattering anisotropy parameter g in the range from greater than zero to about 0.99, and a scatterance parameter S less than about 0.22 or greater than about 3.

  17. Optical and electroluminescent properties of a number of new derivatives of divinyl dibenzothiophene sulfone

    Science.gov (United States)

    Kukhto, A. V.; Kopylova, T. N.; Gadirov, R. M.; Degtyarenko, K. N.; Nikonova, E. N.; Solodova, T. A.; Kukhto, I. N.

    2016-02-01

    Photoluminescent and electroluminescent properties of four new bipolar linear derivatives of divinyl dibenzothiophene sulfone are studied. It is found that amorphous films of solutions, as well as films of the compounds under study in the poly(N-vinylcarbazole) matrix, have a rather high quantum yield of photoluminescence in the blue and blue-green spectrum regions. Bright blue electroluminescence is obtained in the samples with a structure of ITO/PEDOT:PSS/TPD/OC/LiF/Al using vacuum deposition of the compounds under study and in the single-layer ITO/PEDOT:PSS/PVK:OC/LiF/Al structure when applied from the solution with a threshold voltage of 2.5-3.5 V. The influence of a molecule structure on the spectra and quantum yield of fluorescence as well as on the electroluminescent properties of the compounds is shown. Results of quantum-chemical calculations in the context of the density functional theory of the structure and characteristics of main molecular orbitals are presented.

  18. A Stable Blue Organic Electroluminescent Material

    Institute of Scientific and Technical Information of China (English)

    郑新友; 吴有智; 等

    2002-01-01

    In order to compare two kinds of blue electroluminescent materials,we have investigated two kinds of blue OLEDs with the similar structure ITO/CuPc/NPB/JBEM:perylene/Alq/Mg:Ag[device(J)] and ITO/CuPc/NPB/DPVBi:perylene/Alq/Mg:Ag[device(D)].The difference of luminance and efficiency was not obvious for the two devices,However,there was remarkable difference for their lifetime.The device(J) achieved longer half lifetime of 1035h at initial luminance of 100 cd/m2,and that of device(D) was only255h,According to their energy level diagrams,the differentce of their stability may originate from different host materials in the two devices.It may be attributed to the better thermal stability of JBEM molecues than that of DPVBi.It is shown that JBEM may be a promising blue organic electroluminescent material with great stability.

  19. Organic Electroluminescent Sensor for Pressure Measurement

    Directory of Open Access Journals (Sweden)

    Tomohide Niimi

    2012-10-01

    Full Text Available We have proposed a novel concept of a pressure sensor called electroluminescent pressure sensor (ELPS based on oxygen quenching of electroluminescence. The sensor was fabricated as an organic light-emitting device (OLED with phosphorescent dyes whose phosphorescence can be quenched by oxygenmolecules, and with a polymer electrode which permeates oxygen molecules. The sensor was a single-layer OLED with Platinum (II octaethylporphine (PtOEP doped into poly(vinylcarbazole (PVK as an oxygen sensitive emissive layer and poly(3,4-ethylenedioxythiophene mixed with poly(styrenesulfonate (PEDOT:PSS as an oxygen permeating polymer anode. The pressure sensitivity of the fabricated ELPS sample was equivalent to that of the sensor excited by an illumination light source. Moreover, the pressure sensitivity of the sensor is equivalent to that of conventional pressure-sensitive paint (PSP, which is an optical pressure sensor based on photoluminescence.

  20. The physical reason of intense electroluminescence in ITO-Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Malik, Oleksandr [Electronics Department, National Institute for Astrophysics, Optics, and Electronics (INAOE), P.O. 51 and 216, Puebla, 72000 (Mexico)], E-mail: amalik@inaoep.mx; Martinez, Arturo I.; Hidalga W, F.J. de la [Electronics Department, National Institute for Astrophysics, Optics, and Electronics (INAOE), P.O. 51 and 216, Puebla, 72000 (Mexico)

    2007-10-15

    Intense electroluminescence from a spray deposited heavily tin-doped indium oxide (ITO)-n type silicon (Si) heterojunctions, presenting the properties of an induced p-n junction, has been observed. The role of the degenerated n-type ITO film as a good supplier of holes to maintain an inversion layer formed at the silicon interface is discussed. However, the physical mechanism responsible for a significantly higher quantum efficiency of the radiation emission from such structures is not clear. The explanation of this phenomenon, based on the confinement of carriers at the interface due to multi-point contacts between the ITO film and the silicon, is discussed.

  1. Electroluminescence of Copolyfluorenes in the Visible Range of the Spectrum

    Science.gov (United States)

    Kopylova, T. N.; Nikonova, E. N.; Nikonov, S. Yu.; Gadirov, R. M.; Telminov, E. N.; Degtyarenko, K. M.; Odod, A. V.; Yakimanskii, A. V.; Il'gach, D. M.

    2016-04-01

    Results of spectral-luminescent and electroluminescent investigations of organic semiconductor polyfluorenebased copolymers in diode devices emitting dark blue, green, red, and white light are presented.

  2. Synthesis and fabrication of Y{sub 2}O{sub 3}:Tb{sup 3+} and Y{sub 2}O{sub 3}:Eu{sup 3+} thin films for electroluminescent applications: Optical and structural characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Alarcón-Flores, G., E-mail: alar_fbeto@yahoo.com [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); García-Hipólito, M. [Instituto de Investigaciones en Materiales, UNAM, Apdo. Postal 70-360, Delegación Coyoacán, C.P. 04150, México D.F. (Mexico); Aguilar-Frutis, M. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); Carmona-Téllez, S. [Instituto de Física, UNAM, Coyoacán, C.P. 04150, México D.F. (Mexico); Martinez-Martinez, R. [Universidad Tecnológica de la Mixteca, Carretera Acatlima Km 2.5, Huajuapan de León Oaxaca, C.P. 69000, México (Mexico); Campos-Arias, M.P. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, IPN, Legaría 694, Irrigación, C.P. 11500, México D.F. (Mexico); Zaleta-Alejandre, E. [Universidad Autónoma del Estado de Hidalgo-Escuela Superior de Apan, Carretera Apan-Calpulalpan Km. 8, C.P. 43920, Apan, Hidalgo (Mexico); and others

    2015-01-15

    Terbium, europium and yttrium β diketonates have been synthesized from acetylacetone and inorganic metal salts and used as precursors for the deposition of Tb{sup 3+} or Eu{sup 3+} doped Y{sub 2}O{sub 3} polycrystalline films by the ultrasonic spray pyrolysis technique. The films were deposited on c-Si substrates at temperatures in the 400–550 °C range. The optical and structural characterization of these films as a function of substrate temperature and Tb{sup 3+} and Eu{sup 3+} concentration was carried out by means of photoluminescence (PL), cathodoluminescence (CL), infrared (IR), ellipsometry, and UV–visible spectroscopy and atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and X ray diffraction (XRD) measurements respectively. The PL intensity from these films was found to depend on deposition temperature. Films deposited above 450 °C exhibited the characteristic PL peaks associated with either Tb{sup 3+} or Eu{sup 3+} intra electronic energy levels transitions. The most intense PL emission was found for dopant concentration of 10 at% for Tb{sup 3+} and at 8 at% for Eu{sup 3+} ions into precursor solution. In both cases concentration quenching of the PL emission was observed for concentrations above these values. The films had a refractive index (1.81), low average surface roughness (∼62 Å) and a UV–Vis. transmission of the order of 90 %T. - Highlights: • Terbium, europium and yttrium β diketonates have been synthesized. • Luminescent thin films of Y{sub 2}O{sub 3}:Tb{sup 3+} and Y{sub 2}O{sub 3}:Eu{sup 3+} were obtained. • Optical and structural characteristics of these thin films are presented. • The films had a refractive index (1.81) and low average surface roughness (∼62 Å)

  3. Electroluminescence of Zn{sub 2}GeO{sub 4}:Mn through SiC whisker electric field enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Wagstaff, Brandon, E-mail: wagstabj@mcmaster.ca [McMaster University, Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada); Kitai, Adrian, E-mail: kitaia@mcmaster.ca [McMaster University, Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada); McMaster University, Department of Materials Science and Engineering, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada)

    2015-11-15

    Alternating current (AC) electroluminescence of thin film oxide phosphors is well known. However in this work electroluminescence of bulk oxide powder phosphors is achieved. A new type of AC Electroluminescent (ACEL) device has been created and developed by integrating SiC whiskers into a phosphor matrix composed of manganese-activated zinc germanate (Zn{sub 2}GeO{sub 4}:Mn{sup 2+}). The conductive SiC whiskers enhance the average electric field in specific regions of the phosphor such that localized breakdown of the phosphor occurs, thus emitting green light. This field enhancement allows light emission to occur in thick film oxide powder phosphors and is notably the first time that bright and reasonably efficient electroluminescence of zinc germanate has been observed without using expensive thin film deposition techniques. Light emission has been achieved in thick pressed pellets using surface-deposited electrodes and the brightness-voltage characteristics of light emission are shown to be consistent with field emission of carriers from the embedded whiskers. - Highlights: • A new electroluminescent phosphor, Zn{sub 2}GeO{sub 4}Mn{sup 2+}+SiC whiskers, is proposed. • A procedure is described to fabricate a solid sample of this composite material. • Under an AC voltage, green light is emitted only in samples containing the SiC whiskers. • A brightness of 25 Cd/m{sup 2} and efficiency of 0.25 Lm/W is observed 9.6×10{sup 6} V/m. • This is notably the first time that ACEL has been observed in bulk Zn{sub 2}GeO{sub 4}Mn{sup 2+}.

  4. Tentative anatomy of ZnS-type electroluminescence

    Science.gov (United States)

    Bringuier, E.

    1994-05-01

    The paper reviews the electrical and optical mechanisms at work in sulfide-based thin-film electroluminescence display devices within the framework of general semiconductor physics. The electrical problem is twofold: (i) charge carriers are sourced at high electric field in a nominally insulating material, the carrier density increasing by almost eight orders of magnitude; (ii) the carriers are transported at high field, with an average energy largely exceeding the thermal one. (i) Carrier sourcing is best understood from direct-current-driven ZnS films, and is ascribed to partly filled deep donors transferring electrons to the conduction band by Fowler-Nordheim tunneling. The deep donors also act as carrier sinkers, and evidence for space charge is afforded by small-signal impedance analysis disclosing a markedly inductive behavior. The conduction picture obtained from dc-driven films is then used to clarify the operation of alternating-current electroluminescence structures where the sulfide is sandwiched between two blocking oxide layers. The electrostatics of the ac structure is investigated in detail including space charge and field nonuniformity, and external observables are related to internal quantities. The simple model of interfacial carrier sourcing and sinking is examined. (ii) High-field electronic transport is controlled by the electron-phonon interaction, and the modeling resorts to numerical simulations or the lucky-drift concept. At low electron energies the interaction with phonons is predominantly polar, while at optical energies it proceeds via deformation potential scattering. In spite of the uncertainties in transport models in that range, it is likely that ˜50% of the electrons overtake 2 eV at the usual operating fields in ZnS. Light emission is associated with impurity luminescence centers embedded in the sulfide host. They are excited while current is flowing, and the ensuing relaxation is partly radiative. We describe the two ways in

  5. Research on Visual Display Integration for Advanced Fighter Aircraft.

    Science.gov (United States)

    1978-11-01

    Tactical Air Control System TAS True Airspeed TDMA Time Division Multiple Access TERCOM Terrain Contour Matching TFEL Thin Film Electroluminescence TFR...Coincidence V V V — V — Radar Correlation V V — v’ v’ V IR/Radiometric Correlators V V V V V Terrain Correlators ( TERCOM ) V V ______ V V...Description Priority Comment Unaided Inertial High TERCOM High Radar Image Corr High EO Image Corr Low Not Adverse Weather RAC High Commend

  6. A New Conducting Polymer Electrode for Organic Electroluminescence Devices

    Institute of Scientific and Technical Information of China (English)

    QU Shu; PENG Jing-Cui

    2008-01-01

    @@ Conducting polymer polydimethylsiloxane (PDMS) is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescenee devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris(8-hydroxyquinoline) aluminium. The capacitance-voltage (C-V), capacitance-frequency (C-F), current-voltage (I- V), radiation intensity-voltage (R- V) and luminance efficiency-voltage (E-V) measurements are systematically studied to investigate the conductivity, Fermi align-ment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.

  7. Solid state carbon nanotube device for controllable trion electroluminescence emission

    Science.gov (United States)

    Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

    2016-03-01

    Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for

  8. About the Nature of Electroluminescence Centers in Plastically Deformed Crystals of p-type Silicon

    Directory of Open Access Journals (Sweden)

    B.V. Pavlyk

    2015-10-01

    Full Text Available The paper describes research of dislocation electroluminescence of single crystal p-type silicon with a high concentration of dislocations on the surface (111. It is shown the reaction of the luminescence spectra and capacitive-modulation spectra of samples after high-temperature annealing in an atmosphere of flowing oxygen. The analysis of the results lets us to establish the nature of recombination centers and their reorganization under high-temperature annealing. It is shown that deposition of Al film on the substrate p-Si leads to the formation of strain capacity and the localization of defects in the surface layer that corresponds to luminescence centers.

  9. Solid state carbon nanotube device for controllable trion electroluminescence emission.

    Science.gov (United States)

    Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

    2016-03-28

    Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ∼5 × 10(-4) photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.

  10. Nanoscale dynamic inhomogeneities in electroluminescence of conjugated polymers

    Science.gov (United States)

    Hatano, Tatsuhiko; Nozue, Shuho; Habuchi, Satoshi; Vacha, Martin

    2011-09-01

    We report the observation and characterization of dynamic spatial heterogeneities in the electroluminescence (EL) of conjugated polymer organic light-emitting diodes via high-sensitivity fluorescence microscopy. The active layers of the single-layer devices are polymers of the poly(phenylene vinylene) family, i.e., poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-p-phenylene vinylene] and a commercially available copolymer, Super Yellow. The devices are prepared directly on a microscope coverslip, making it possible to use high numerical aperture oil-immersion objective lenses with a diffraction-limited resolution of a few hundred nanometers for microscopic EL imaging. Detection via high-sensitivity CCD camera allows the measurement of EL dynamics with millisecond time resolution for a wide range of applied voltages. We found spatial heterogeneities in the form of high EL intensity sites in all devices studied. The EL from these sites is strongly fluctuating in time, and the dynamics is bias voltage dependent. At the same time, there is no difference in the local microscopic EL spectra between the high- and low-intensity sites. The results are interpreted in terms of a changing charge balance and local structural changes in the active film layer.

  11. Synthesis and Electroluminescence Characterization of Cadmium Complex

    Directory of Open Access Journals (Sweden)

    Rahulkumar

    2011-01-01

    Full Text Available We have synthesized and characterized a new electroluminescence material,Cadmium [(2-(2-hydroxyphenylbenzoxazole(8-hydoxyquinoline] Cd(HPBq. The absorption spectra of this material show maxima at 378 nm. It may be attributed due to π° – π* transition. The photoluminescence showed peak at 520 nm. TGA data of the material shows stability up to 370 °C .Organic light emitting diode have been fabricated with this material and the fundamental structures of the device is ITO/α-NPD/ Cd(HPBq/BCP/Alq3/LiF/Al exhibited a luminescence peak at 550 nm. The maximum luminescence of the device was 295 cd/m2 with current density of 6687 A/m2 at 20 V. The maximum current efficiency of OLED was 1.01 cd/A at 17 V and power efficiency was 1.01 lm/w at 17 V.

  12. FIrpic: archetypal blue phosphorescent emitter for electroluminescence.

    Science.gov (United States)

    Baranoff, Etienne; Curchod, Basile F E

    2015-05-14

    FIrpic is the most investigated bis-cyclometallated iridium complex in particular in the context of organic light emitting diodes (OLEDs) because of its attractive sky-blue emission, high emission efficiency, and suitable energy levels. In this Perspective we review the synthesis, structural characterisations, and key properties of this emitter. We also survey the theoretical studies and summarise a series of selected monochromatic electroluminescent devices using FIrpic as the emitting dopant. Finally we highlight important shortcomings of FIrpic as an emitter for OLEDs. Despite the large body of work dedicated to this material, it is manifest that the understanding of photophysical and electrochemical processes are only broadly understood mainly because of the different environment in which these properties are measured, i.e., isolated molecules in solvent vs. device.

  13. Synthesis and electroluminescence properties of benzothiazole derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Fu Huiying [Department of Materials Science, Fudan University, Shanghai 200433 (China); Gao Xindong [State Key Laboratory of Applied Surface Physics, Fudan University, Shanghai 200433 (China); Zhong Gaoyu; Zhong Zhiyang [Department of Materials Science, Fudan University, Shanghai 200433 (China); Xiao Fei, E-mail: feixiao@fudan.edu.c [Department of Materials Science, Fudan University, Shanghai 200433 (China); Shao Bingxian [Department of Materials Science, Fudan University, Shanghai 200433 (China)

    2009-10-15

    Benzothiazole-based blue fluorescent materials N-(4-(benzo[d]thiazol-2-yl)phenyl)-N-phenylbenzenamine (BPPA) and N-(4-(benzo[d]thiazol-2-yl)phenyl)-N-phenylnaphthalen-1-amine (BPNA) were synthesized for use in organic light-emitting diodes (OLEDs). Electroluminescent device with a configuration of ITO/NPB/BPPA/BCP/Alq{sub 3}/LiF/Al showed a maximum brightness of 3760 cd/m{sup 2} at 14.4 V with the CIE coordinates of (0.16, 0.16). A current efficiency of 3.01 cd/A and an external quantum efficiency of 2.37% at 20 mA/cm{sup 2} were obtained from this device. Molecules derived from BPPA and BPNA with incorporated dicyanomethylidene, which is a functional group for most red fluorescent molecules, were designed, synthesized and characterized to study the red fluorescence properties of the benzothiazole derivatives.

  14. Photo- and electroluminescent properties of zinc(II) complexes with tetradentate Schiff bases, derivatives of salicylic aldehyde

    Science.gov (United States)

    Vashchenko, A. A.; Lepnev, L. S.; Vitukhnovskii, A. G.; Kotova, O. V.; Eliseeva, S. V.; Kuz'mina, N. P.

    2010-03-01

    It is studied how the introduction of various substituents into the composition of organic ligands affects the photoluminescence spectra of new zinc(II) complexes with tetradentate Schiff bases H2L (derivatives of salicylic aldehyde (H2SAL1, H2SAL2) and o-vanillin (H2MO1, H2MO2) with ethylenediamine and o-phenylenediamine) in the form of bulk solids and thin films. It is demonstrated that the emission spectra of bulk solid complexes without o-phenylenediamine bridges (ZnSAL1 and ZnMO1) contain additional long-wavelength bands compared to the spectra of corresponding thin films. In the case of films obtained from [ZnSAL1]2 dimer complexes, the long-wavelength band is dominant. At the same time, the photoluminescence spectra of ZnSAL2 and ZnMO2 complexes with o-phenylenediamine bridges are similar in the case of solid samples and thin films. The electroluminescent properties of organic light-emitting diodes (OLEDs) with the ITO/α-NPD/ZnL/Ca:Al structure are studied. The bathochromic shift of the electroluminescence peaks of OLEDs with respect to the photoluminescence spectra of bulk solid samples and thin films is probably related to the formation of exciplexes at the α-NPD/ZnL interface. The electroluminescence spectra of OLEDs based on [ZnSAL1]2 show a hypsochromic shift of the emission maximum, which can be caused by a shift of the recombination region into the α-NPD layer.

  15. Enhanced electroluminescence of organic light-emitting diodes by using halloysite nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mondragón, Margarita, E-mail: mmondragon@ipn.mx [Instituto Politécnico Nacional, ESIME Azcapotzalco, Av. de las Granjas 682, 02250 México D.F. (Mexico); Moggio, Ivana; León, Arxel de; Arias, Eduardo [Centro de Investigación en Química Aplicada, CIQA, Blvd. Enrique Reyna 140, 25253 Saltillo, Coahuila (Mexico)

    2013-12-15

    The effect of halloysite clay nanotubes (HNTs) on the optical and electronic properties of poly(2-methoxy-5-[2′-ethylhexyloxy]-1,4-phenylenevinylene) (MEH-PPV) have been investigated. The UV–vis absorption band of the conjugated polymer remains unchanged upon the incorporation of halloysite nanotubes (HNTs). Photoluminescence (PL) measurements reveal a decreased quantum yield in the MEH-PPV/HNTs nanocomposites, compared with bulk MEH-PPV. Improvement of the electroluminescence of organic light-emitting diodes (OLEDs) was achieved by incorporating high contents of HNTs. The nanotubes act to enhanced polymer aggregates, as revealed by AFM analysis, thus increasing charge transport and therefore electroluminescence but also decreasing PL quantum yield. -- Highlights: • Thin films of nanocomposites of MEH-PPV/HNTs were prepared by spin coating. • Quantum yield in the nanocomposites was decreased compared with bulk MEH-PPV. • Improvement of the EL of OLEDs was achieved by incorporating high contents of HNTs. • The HNTs act to enhanced polymer aggregates, as revealed by AFM.

  16. Theoretical and material studies on thin-film electroluminescent devices

    Science.gov (United States)

    Summers, C. J.; Goldman, J. A.; Brennan, K.

    1988-01-01

    During this report period work was performed on the modeling of High Field Electronic Transport in Bulk ZnS and ZnSe, and also on the surface cleaning of Si for MBE growth. Some MBE growth runs have also been performed in the Varian GEN II System. A brief outline of the experimental work is given. A complete summary will be done at the end of the next reporting period at the completion of the investigation. The theoretical studies are included.

  17. Analysis of power supply circuits for electroluminescent panels

    Science.gov (United States)

    Drumea, Andrei; Dobre, Robert Alexandru

    2016-12-01

    The electroluminescent panel is a light emitting device that requires for normal operations alternative voltages with peak to peak amplitudes in 100V… 300V range and frequencies in 100Hz … 2 kHz range. Its advantages, when compared with standard light sources like incandescent lamps, gas-discharge lamps or light emitting diodes (LEDs), are lower power consumption, flexible substrate and uniform light without observable luminous points. One disadvantage of electroluminescent panels is the complex power supply required to drive them, but the continuous improvement in passive and active integrated devices for switched mode power supplies will eventually solve this issue. The present paper studies different topologies for these power supplies and the effect of the electric parameters like the amplitude, frequency, waveform of the supplying voltage on the light emission and on power consumption for electroluminescent panels with different size and colors.

  18. Electroluminescent, polycrystalline cadmium selenide nanowire arrays.

    Science.gov (United States)

    Ayvazian, Talin; van der Veer, Wytze E; Xing, Wendong; Yan, Wenbo; Penner, Reginald M

    2013-10-22

    Electroluminescence (EL) from nanocrystalline CdSe (nc-CdSe) nanowire arrays is reported. The n-type, nc-CdSe nanowires, 400-450 nm in width and 60 nm in thickness, were synthesized using lithographically patterned nanowire electrodeposition, and metal-semiconductor-metal (M-S-M) devices were prepared by the evaporation of two gold contacts spaced by either 0.6 or 5 μm. These M-S-M devices showed symmetrical current voltage curves characterized by currents that increased exponentially with applied voltage bias. As the applied biased was increased, an increasing number of nanowires within the array "turned on", culminating in EL emission from 30 to 50% of these nanowires at applied voltages of 25-30 V. The spectrum of the emitted light was broad and centered at 770 nm, close to the 1.74 eV (712 nm) band gap of CdSe. EL light emission occurred with an external quantum efficiency of 4 × 10(-6) for devices with a 0.60 μm gap between the gold contacts and 0.5 × 10(-6) for a 5 μm gap-values similar to those reported for M-S-M devices constructed from single-crystalline CdSe nanowires. Kelvin probe force microscopy of 5 μm nc-CdSe nanowire arrays showed pronounced electric fields at the gold electrical contacts, coinciding with the location of strongest EL light emission in these devices. This electric field is implicated in the Poole-Frenkel minority carrier emission and recombination mechanism proposed to account for EL light emission in most of the devices that were investigated.

  19. Progress and Prospects in Stretchable Electroluminescent Devices

    Science.gov (United States)

    Wang, Jiangxin; Lee, Pooi See

    2017-03-01

    Stretchable electroluminescent (EL) devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are reviewed. Finally, we

  20. Progress and Prospects in Stretchable Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Wang Jiangxin

    2017-03-01

    Full Text Available Stretchable electroluminescent (EL devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are

  1. Photoluminescence and Electroluminescence Studies on Tb-Doped Silicon Rich Oxide Materials and Devices

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Photoluminescence (PL) characteristics of Tb-doped silicon rich oxide (SRO) films prepared by DC-sputtering and post-annealing processes were studied. The silicon richness of the SRO film could be controlled by varying the sputtering power and oxygen concentration in the sputtering chamber. PL emission from the as-deposited sample was found to be composed of Tb3+ intra 4f transition-related emission and the silicon nano particle-related broad bandwidth emission. Thermal annealing could significantly improve the material properties as well as the PL signals. PL properties depended strongly upon the annealing scheme and silicon richness. Annealing at high temperatures (900~1050 ℃) enhanced Tb-related emission and suppressed the silicon nano particle-related emission. For samples with different silicon richness, annealing at 950 ℃ was found to produce higher PL signals than at other temperatures. It was attributed more to lifetime quenching than to concentration quenching. Electroluminescent (EL) devices with a capacitor structure were fabricated, the optimized process condition for the EL device was found to be different from that of PL emission. Among the annealing schemes that were used, wet oxidation was found to improve device performance the most, whereas, dry oxidation was found to improve material property the most. Wet oxidation allowed the breakdown electrical field to increase significantly and to reach above 10 mV·cm-1. The EL spectra showed a typical Tb3+ emission, agreeing well with the PL spectra. The I-V measurements indicated that for 100 nm thick film, the Fowler-Nordheim tunneling started at an electrical field of around 6 mV·cm-1 and the light emission became detectable at a current density of around 10-4 A·cm-2 and higher. Strong electroluminescence light emission was detected when the electrical field was close to 10 mV·cm-1.

  2. Spray deposition of organic electroluminescent coatings for application in flexible light emitting devices

    Directory of Open Access Journals (Sweden)

    Mariya Aleksandrova

    2015-12-01

    Full Text Available Organic electroluminescent (EL films of tris(8-hydroxyquinolinatoaluminum (Alq3 mixed with polystyrene (PS binder were produced by spray deposition. The influence of the substrate temperature on the layer’s morphology and uniformity was investigated. The deposition conditions were optimized and simple flexible light-emitting devices consisting of indium-tin oxide/Alq3:PS/aluminum were fabricated on polyethylene terephthalate (PET foil to demonstrate the advantages of the sprayed organic coatings. Same structure was produced by thermal evaporation of Alq3 film as a reference. The influence of the deposition method on the film roughness and contact resistance at the electrode interfaces for both types of structures was estimated. The results were related to the devices’ efficiency. It was found that the samples with sprayed films turn on at 4 V, which is 2 V lower in comparison to the device with thermal evaporated Alq3. The current through the sprayed device is six times higher as well (17 mA vs. 2.8 mA at 6.5 V, which can be ascribed to the lower contact resistance at the EL film/electrode interfaces. This is due to the lower surface roughness of the pulverized layers.

  3. On the spectral difference between electroluminescence and photoluminescence of Si nanocrystals: a mechanism study of electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dong-Chen; Chen, Jia-Rong; Zhu, Jiang; Lu, Chen-Tian; Lu, Ming, E-mail: minglu@fudan.ac.cn [Fudan University, Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center (China)

    2013-11-15

    Spectral shift, especially blueshift, in peak position of electroluminescence (EL) spectrum of Si nanocrystal (Si-nc) with respect to its photoluminescence (PL) counterpart has been often observed. Explanations for the spectral difference are different for different EL mechanisms adopted. To gain a relevant picture of the EL process, in this work, we analyze three EL mechanisms that are mainly applied nowadays, i.e., the model of defect light emission, that of band-filling, and that of Si-nc size selection by the carrier energy. Different Si-nc samples and working conditions are designed and their EL and PL emissions monitored according to the predictions of the three models. It is concluded that the observed EL is mainly of Si-nc-related origin. The experimental results are more consistent with the model of Si-nc size selection.

  4. Organic Electroluminescent Device Based on TPP%基于TPP的有机电致发光器件

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A kind of pyrazoline derivative 1,3-bis(phenyl)-5-(2-phenanthrene)-2-pyrazoline(TPp) was synthesized in order to obtain stable film and applied to organic electroluminecsent diode as hole transporting material. Two devices with structures as indium-tin-oxide(ITO) TPP (50 nm)/tris-(8-hydroxyquinoline) aluminum(Alq3) (50 nm)/Al (150 nm) and ITO /TPP (50 nm)/lithium tera-(8-hydroxy-uinolinato)boron(LiBq4 (50 nm)/Alq3 (5 nm)/Al (150 nm) were fabricated, they showed good electroluminescent(EL) performance and TPP was proved to be a good hole transporting material.

  5. Organic Electroluminescent Device Based on TPP%基于TPP的有机电致发光器件

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    A kind of pyrazoline derivative 1,3-bis(phenyl)-5-(2-phenanthrene)-2-pyrazoline(TPp) was synthesized in order to obtain stable film and applied to organic electroluminecsent diode as hole transporting material. Two devices with structures as indium-tin-oxide(ITO) TPP (50 nm)/tris-(8-hydroxyquinoline) aluminum(Alq3) (50 nm)/Al (150 nm) and ITO /TPP (50 nm)/lithium tera-(8-hydroxy-uinolinato)boron(LiBq4 (50 nm)/Alq3 (5 nm)/Al (150 nm) were fabricated, they showed good electroluminescent(EL) performance and TPP was proved to be a good hole transporting material.

  6. The Electroluminescence Characterization of Poly(p-phenyleneethynylene)——The π-conjugated Backbone Interrupted by a Butylene Unit

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    π-Conjugated poly(p-phenyleneethynylene) with the interruption of the conjugation by a butylene unit was synthesized. Its absorption, PL and EL spectra were investigated respectively. The spectral peaks shifted to the higher energy side with the interruption of the conjugation lengths. The model compound was synthesized, by which the results were proved. The thermal characteristics of the polymer was determined by DSC and TGA, indicating that the polymer has a good thermal stability. The electroluminescence(EL) in the green region of the spectrum with a maximum at 500 nm was observed from the polymer films sandwiched between indium-tin-oxide and an Al electrode.

  7. Visible and near-infrared electroluminescence from TiO2/p+-Si heterostructured device

    Directory of Open Access Journals (Sweden)

    Yang Yang

    2014-04-01

    Full Text Available We report on visible and near-infrared (NIR electroluminescence (EL from the device based on the TiO2/p+-Si heterostructure, in which the TiO2 film is composed of anatase and rutile phases. As the device is applied with sufficiently high forward bias with the positive voltage connecting to p+-Si, the visible EL peaking at ∼600 nm along with the NIR EL centered at ∼810 nm occur simultaneously. It is proposed that the oxygen vacancies in the anatase TiO2 and Ti3+ defect states in the rutile TiO2 are the responsible centers for the visible and NIR EL, respectively.

  8. Experimental and theoretical study of photo- and electroluminescence of divinyldiphenyl and divinylphenanthrene derivatives

    Science.gov (United States)

    Samsonova, L. G.; Valiev, R. R.; Degtyarenko, K. M.; Sunchugashev, D. A.; Kukhta, I. N.; Kukhta, A. V.; Kopylova, T. N.

    2017-02-01

    Electronic absorption and luminescence spectra of four new compounds of divinyldiphenyl and divinylphenanthrene derivatives are investigated experimentally in tetrahydrofuran solutions and thin films obtained by thermal vacuum deposition and by spin coating of these substances embedded into polyvinylcarbazole matrix. Molecular geometry optimizations and electronic spectra have been calculated in the framework of XMC-QDPT2/6-31G (d, p) and TDDFT/B3LYP/6-31G (d, p) levels of theory. We have fabricated and studied OLED devices with the structure ITO/PEDOT:PSS/NPD/L/Ca/Al and ITO/PEDOT:PSS/PVK + L/Ca, where L is the luminophore. It is demonstrated that the photo-and electroluminescence spectra of divinyldiphenyl are not identical and undergo strong changes depending on the method of sample preparation.

  9. Automatic Detection of Inactive Solar Cell Cracks in Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2017-01-01

    We propose an algorithm for automatic determination of the electroluminescence (EL) signal threshold level corresponding to inactive solar cell cracks, resulting from their disconnection from the electrical circuit of the cell. The method enables automatic quantification of the cell crack size...

  10. A New Kind of Blue Hybrid Electroluminescent Device.

    Science.gov (United States)

    Wang, Junling; Li, Zhuan; Liu, Chunmei

    2016-04-01

    Bright blue Electroluminescence come from a ITO/BBOT doped silica (6 x 10(-3) M) made by a sol-gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a single-layered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol-gel method was investigated. A number of concentrations of hybrid devices were prepared and the maxium concentration was 6 x 10(-3) M. Blue electroluminescent (EL) always occurred above a threshold field 8.57 x 10(5) V/cm (30 V) at alternating voltage at 500 HZ. The luminance of the devices increased with the concentration of doped BBOT, but electroluminescence characteristics were different from a single molecule's photoluminescence properties of triple peaks. When analyzing in detail direct-current electroluminescence devices of pure BBOT, a single peak centered at 2.82 eV appeared with the driven voltage increase, which is similar to the hybrid devices. Comparing Gaussian decomposition date between two kinds of devices, the triple peak characteristic of BBOT was consistent. It is inferred that BBOT contributed EL of the hybrid devices mainly and silica may account for a very small part. Meanwhile the thermal stability of matrix silica was measured by Thermal Gravity-Mass Spectroscopy (TG-MS). There is 12 percent weight loss from room temperature to 1000 °C and silica has about 95% transmittance. So the matric silica played an important role in thermal stability and optical stability for BBOT. In addition, this kind of blue electroluminescence device can take advantages of organic materials BBOT and inorganic materials silica. This is a promising way to enrich EL devices, especially enriching inorganic EL color at a low cost.

  11. Yellow-green electroluminescence of samarium complexes of 8-hydroxyquinoline

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Sara Karimi; Najafi, Ezzatollah [Department of Chemistry Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Amini, Mostafa M., E-mail: m-pouramini@sbu.ac.ir [Department of Chemistry Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Janghouri, Mohammad; Mohajerani, Ezeddin [Laser Research Institute Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Ng, Seik Weng [Department of Chemistry, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2014-12-15

    Four novel samarium complexes were prepared by reacting samarium(III) nitrate with 8-hydroxyquinoline, 2-methyl-8-hydroxyquinoline, and 1,10-phenanthroline and utilized as emitting materials in the electroluminescence device. All complexes were characterized by elemental analysis, infrared, UV–vis and {sup 1}H NMR spectroscopes and the molecular structure of a representative complex, [Sm{sub 2}(Me-HQ){sub 4}(NO{sub 3}){sub 6}] (1), was determined by single-crystal X-ray diffraction. Utilization of a π-conjugated (phenanthroline) ligand as a second ligand in the structure of the samarium complexes resulted in red shifts in both absorption and fluorescence spectra of complexes and moderately enhanced the photoluminescence intensity and the fluorescence quantum yield. The maximum emission peaks showed that a good correlation exists between the nature of the substituent group on the 8-hydroxyquinoline and the addition of the π-conjugated ligand in the structure of samarium complexes and emission wavelength. Devices with samarium(III) complexes with structure of ITO/PEDOT:PSS (90 nm)/PVK:PBD:Sm(III) complexes (75 nm)/Al (180 nm) were fabricated. In the electroluminescence (EL) spectra of the devices, a strong ligand-centered emission and narrow bands arising from the {sup 4}G{sub 5/2}→{sup 6}H{sub J} transitions (J=7/2, 9/2, and 11/2) of the samarium ion were observed for the complexes. The electroluminescent spectra of the samarium complexes were red-shifted as compared with the PVK:PBD blend. We believe that the electroluminescence performance of OLED devices based on samarium complexes relies on overlaps between the absorption of the samarium compounds and the emission of PVK:PBD. This revealed that it is possible to evaluate the electroluminescence performance of the samarium compounds-doped OLED devices based on the emission of PVK:PBD and the absorption of the dopants. - Highlights: • Four novel photoluminescence samarium complexes have been synthesized.

  12. Direct observation of bubble-assisted electroluminescence in liquid xenon

    CERN Document Server

    Erdal, E; Chepel, V; Rappaport, M L; Vartsky, D; Breskin, A

    2015-01-01

    Bubble formation in liquid xenon underneath a Thick Gaseous Electron Multiplier (THGEM) electrode immersed in liquid xenon was observed with a CCD camera. With voltage across the THGEM, the appearance of bubbles was correlated with that of electroluminescence signals induced by ionization electrons from alpha-particle tracks. This confirms recent indirect evidence that the observed photons are due to electroluminescence within a xenon vapor layer trapped under the electrode. The bubbles seem to emerge spontaneously due to heat flow from 300K into the liquid, or in a controlled manner, by locally boiling the liquid with resistive wires. Controlled bubble formation resulted in energy resolution of {\\sigma}/E~7.5% for ~6,000 ionization electrons. The phenomenon could pave ways towards the conception of large-volume 'local dual-phase' noble-liquid TPCs.

  13. Liquid Hole Multipliers: bubble-assisted electroluminescence in liquid xenon

    CERN Document Server

    Arazi, L; Coimbra, A E C; Rappaport, M L; Vartsky, D; Chepel, V; Breskin, A

    2015-01-01

    In this work we discuss the mechanism behind the large electroluminescence signals observed at relatively low electric fields in the holes of a Thick Gas Electron Multiplier (THGEM) electrode immersed in liquid xenon. We present strong evidence that the scintillation light is generated in xenon bubbles trapped below the THGEM holes. The process is shown to be remarkably stable over months of operation, providing - under specific thermodynamic conditions - energy resolution similar to that of present dual-phase liquid xenon experiments. The observed mechanism may serve as the basis for the development of Liquid Hole Multipliers (LHMs), capable of producing local charge-induced electroluminescence signals in large-volume single-phase noble-liquid detectors for dark matter and neutrino physics experiments.

  14. Quantifying Solar Cell Cracks in Photovoltaic Modules by Electroluminescence Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso; Glick, Stephen; Kerekes, Tamas; Teodorescu, Remus

    2015-06-14

    This article proposes a method for quantifying the percentage of partially and totally disconnected solar cell cracks by analyzing electroluminescence images of the photovoltaic module taken under high- and low-current forward bias. The method is based on the analysis of the module's electroluminescence intensity distribution, applied at module and cell level. These concepts are demonstrated on a crystalline silicon photovoltaic module that was subjected to several rounds of mechanical loading and humidity-freeze cycling, causing increasing levels of solar cell cracks. The proposed method can be used as a diagnostic tool to rate cell damage or quality of modules after transportation. Moreover, the method can be automated and used in quality control for module manufacturers, installers, or as a diagnostic tool by plant operators and diagnostic service providers.

  15. A multilayer organic electroluminescent device using an organic dye salt

    Science.gov (United States)

    Feng, Xueyuan; Gu, Yongdi; Zhang, Jiayu; Cui, Yiping

    2005-01-01

    Organic electroluminescent devices have received considerable attention due to their application in flat-panel displays. To achieve full-color displays, it is necessary to obtain organic layers emitting red, green, and blue light, but it is still a challenge to obtain efficient and stable organic layer emitting red light so far. Recently, we found that an organic salt, trans-4-[p-[N-ethyl-N-(hydroxyethyl)amino]styryl]-N-methylphridinium tetraphenylborate (ASPT), exhibits efficient red-light emission. In this paper, we report a multilayer electrolumicescent device incorporating a hole-transport layer, an ASPT layer, and an electron-transport layer. The dependence of the carrier transport and the luminescence on the device structure is investigated in detail. Compared to the monolayer device, the balance between hole and electron injections is significantly improved for the multilayer device, and thus the electroluminescent efficiency and intensity are enhanced.

  16. Passive Matrix Organic Electroluminescent Display for 3G Cellular Phone

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The major features of the display technologies for 3G cellular phone are reviewed. The comparison between their potential candidates for 3G cellular phone is given, and a detailed discussion is made on passive matrix organic electroluminescent display technology. A novel method to improve display contrast ratio is presented. Finally several 3G phone set prototypes with OLED display panels are given as well as the market forecast

  17. Study on electroluminescence from porous silicon light-emitting diode

    Institute of Scientific and Technical Information of China (English)

    Yajun Yang; Qingshan Li; Xianyun Liu

    2006-01-01

    @@ Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

  18. Spectral and Electroluminescent Properties of Binuclear Zinc Complexes with Halogen-Substituted Derivatives of 1,2,4-Triazole

    Science.gov (United States)

    Kopylova, T. N.; Degtyarenko, K. M.; Samsonova, L. G.; Gadirov, R. M.; Gusev, A. N.; Shul'gin, V. F.; Meshkova, S. B.

    2015-03-01

    Spectral properties of binuclear zinc complexes in chloroform solutions and polyvinylcarbazole (PVC) films are investigated. It is demonstrated that incorporation of a halogen atom (chlorine or bromine) in a ligand benzene ring leads to a small shift of the spectrum toward the red region and a reduction of the fluorescence quantum yield. The fluorescence and phosphorescence spectra at T = 77K are investigated. The fluorescence undergoes a blue shift of about 30 nm and multiply increases in the intensity, and the phosphorescence is observed at 540-580 nm. The phosphorescence lifetime is estimated. The electroluminescent properties of metal complexes in structures with thermal vacuum spin coating of complexes and in PVC films are investigated.

  19. Quantitative structure-property relationships of electroluminescent materials: Artificial neural networks and support vector machines to predict electroluminescence of organic molecules

    Indian Academy of Sciences (India)

    Alana Fernandes Golin; Ricardo Stefani

    2013-12-01

    Electroluminescent compounds are extensively used as materials for application in OLED. In order to understand the chemical features related to electroluminescence of such compounds, QSPR study based on neural network model and support vector machine was developed on a series of organic compounds commonly used in OLED development. Radial-basis function-SVM model was able to predict the electroluminescence with good accuracy ( = 0.90). Moreover, RMSE of support vector machine model is approximately half of RMSE observed for artificial neural networks model, which is significant from the point of view of model precision, as the dataset is very small. Thus, support vector machine is a good method to build QSPR models to predict the electroluminescence of materials when applied to small datasets. It was observed that descriptors related to chemical bonding and electronic structure are highly correlated with electroluminescence properties. The obtained results can help in understating the structural features related to the electroluminescence, and supporting the development of new electroluminescent materials.

  20. Electroluminescent device having improved light output

    Energy Technology Data Exchange (ETDEWEB)

    Tyan; Yuan-Sheng (Webster, NY); Preuss, Donald R. (Rochester, NY); Farruggia, Giuseppe (Webster, NY); Kesel, Raymond A. (Avon, NY); Cushman, Thomas R. (Rochester, NY)

    2011-03-22

    An OLED device including a transparent substrate having a first surface and a second surface, a transparent electrode layer disposed over the first surface of the substrate, a short reduction layer disposed over the transparent electrode layer, an organic light-emitting element disposed over the short reduction layer and including at least one light-emitting layer and a charge injection layer disposed over the light emitting layer, a reflective electrode layer disposed over the charge injection layer and a light extraction enhancement structure disposed over the first or second surface of the substrate; wherein the short reduction layer is a transparent film having a through-thickness resistivity of 10.sup.-9 to 10.sup.2 ohm-cm.sup.2; wherein the reflective electrode layer includes Ag or Ag alloy containing more than 80% of Ag; and the total device size is larger than 10 times the substrate thickness.

  1. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    Energy Technology Data Exchange (ETDEWEB)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi [Electronics and Information Systems, Akita Prefectural Univ. Yuri-honjo, Akita 015-0055 (Japan)

    2014-02-21

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed.

  2. Electroluminescence of Si Nanocrystal-Doped SiO2

    Institute of Scientific and Technical Information of China (English)

    CHEN Dan; XIE Zhi-Qiang; WU Qian; ZHAO You-Yuan; LU Ming

    2007-01-01

    @@ We perform a comparative study on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystaldoped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.

  3. Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions.

    Science.gov (United States)

    Cueff, Sébastien; Labbé, Christophe; Jambois, Olivier; Berencén, Yonder; Kenyon, Anthony J; Garrido, Blas; Rizk, Richard

    2012-09-24

    We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiOx) layers. The effects of both the active layer thickness and the Si-excess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electrically-driven devices using Si-ncs or Si-excess mediated EL.

  4. High-sensitivity strain visualization using electroluminescence technologies

    Science.gov (United States)

    Xu, Jian; Jo, Hongki

    2016-04-01

    Visualizing mechanical strain/stress changes is an emerging area in structural health monitoring. Several ways are available for strain change visualization through the color/brightness change of the materials subjected to the mechanical stresses, for example, using mechanoluminescence (ML) materials and mechanoresponsive polymers (MRP). However, these approaches were not effectively applicable for civil engineering system yet, due to insufficient sensitivity to low-level strain of typical civil structures and limitation in measuring both static and dynamic strain. In this study, design and validation for high-sensitivity strain visualization using electroluminescence technologies are presented. A high-sensitivity Wheatstone bridge, of which bridge balance is precisely controllable circuits, is used with a gain-adjustable amplifier. The monochrome electroluminescence (EL) technology is employed to convert both static and dynamic strain change into brightness/color change of the EL materials, through either brightness change mode (BCM) or color alternation mode (CAM). A prototype has been made and calibrated in lab, the linearity between strain and brightness change has been investigated.

  5. Hybrid electroluminescent device based on MEH-PPV and ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hewidy, Dina; Gadallah, A.-S.; Fattah, G. Abdel

    2017-02-15

    Hybrid organic/inorganic electroluminescent device based on the structure of glass/ITO/PEDOT:PSS/MEH-PPV/ZnO/ZnO submicrorods/Al has been manufactured. Spin coating has been used to deposit both PEDOT:PSS and MEH-PPV. Two-step process has been used to synthesis ZnO submicrorods, namely, spin coating and chemical bath deposition. Changing the dimensions of the ZnO submicrorods in this layer structure has been investigated to improve the performance of the organic/inorganic electroluminescence device. Such layer structure provides electroluminescence with narrow emission bands due to a high gain with this structure. X-ray diffraction patterns and scanning electron microscope images show that ZnO submicrorods have hexagon structure. Current-voltage curve for the structure has been reported. Electroluminescence curves (electroluminescence intensity versus wavelength) at different bias voltages have been presented and these results show narrowing in full width at half maximum in the spectra at high current density compared to photoluminescence excitation. The narrowing in the spectrum has been explained. - Highlights: • Manufacturing of MEH-PPV and ZnO electroluminescent device has been reported. • Spin coating and chemical bath deposition have been used for preparation of ZnO. • SEM images and X-ray diffraction of ZnO have been presented. • Current-voltage curves and electroluminescent measurements have been reported.

  6. Ultraviolet electroluminescence properties from devices based on n-ZnO/i-NiO/p-Si light-emitting diode

    Science.gov (United States)

    Wang, Hui; Zhao, Yang; Wu, Chao; Wu, Guoguang; Ma, Yan; Dong, Xin; Zhang, Baolin; Du, Guotong

    2017-07-01

    We fabricated the Ultraviolet light-emitting diode (LED) based on n-ZnO/i-NiO/p-Si heterostructure by metal-organic chemical vapor deposition (MOCVD). The device exhibited diode-like rectifying characteristics with a turn-on voltage of 3.2 V. The NiO film with high resistance state and [200] preferred orientation acted as an electron blocking layer, which produced a larger ZnO/NiO conduction band offset of 2.93 eV than that of ZnO/Si (0.30 eV). Under forward bias, prominent ultraviolet emissions peaked around 375 nm accompanying with rather weak blue-white emissions peaked around 480 nm were observed at room temperature. Furthermore, the mechanism of the electroluminescence was tentatively discussed in terms of the band diagram of the diode.

  7. Three-Colour Single-Mode Electroluminescence from Alq3 Tuned by Microcavities

    Institute of Scientific and Technical Information of China (English)

    赵家民; 马凤英; 刘星元; 刘云; 初国强; 宁永强; 王立军

    2002-01-01

    Organic metal microcavities were fabricated by using full-reflectivity aluminium film and semi-transparent silverfilm as cavity mirrors. Unlike conventional organic microcavities, such as the typical structure of glass/DBR/ITO/-organic layers/metal mirror, a microcavity with a shorter cavity length was obtained by using two metal mirrors,where DBR is the distributed Bragg reflector consisting of alternate quarter-wave layers of high and low refractiveindex materials. It is realized that red, green and blue single-mode electroluminescence (EL) from the micro-cavities with the structure, glass/Ag/TPD/Alqa/A1, are electrically-driven when the thickness of the Alqa layerchanges. Compared to a non-cavity reference sample whose EL spectrum peak is located at 520nm with a fullwidth at half maximum (FWHM) of 93 nm, the microcavity devices show apparent cavity effects. The EL spectraof red, green and blue microcavities are peaked at 604nm, 540nm and 491 nm, with FWHM of 43 nm, 38nm and47nm, respectively.

  8. Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence.

    Science.gov (United States)

    Carnevale, Santino D; Kent, Thomas F; Phillips, Patrick J; Mills, Michael J; Rajan, Siddharth; Myers, Roberto C

    2012-02-08

    Almost all electronic devices utilize a pn junction formed by random doping of donor and acceptor impurity atoms. We developed a fundamentally new type of pn junction not formed by impurity-doping, but rather by grading the composition of a semiconductor nanowire resulting in alternating p and n conducting regions due to polarization charge. By linearly grading AlGaN nanowires from 0% to 100% and back to 0% Al, we show the formation of a polarization-induced pn junction even in the absence of any impurity doping. Since electrons and holes are injected from AlN barriers into quantum disk active regions, graded nanowires allow deep ultraviolet LEDs across the AlGaN band-gap range with electroluminescence observed from 3.4 to 5 eV. Polarization-induced p-type conductivity in nanowires is shown to be possible even without supplemental acceptor doping, demonstrating the advantage of polarization engineering in nanowires compared with planar films and providing a strategy for improving conductivity in wide-band-gap semiconductors. As polarization charge is uniform within each unit cell, polarization-induced conductivity without impurity doping provides a solution to the problem of conductivity uniformity in nanowires and nanoelectronics and opens a new field of polarization engineering in nanostructures that may be applied to other polar semiconductors.

  9. Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    F. Severiano

    2017-01-01

    Full Text Available We report the obtaining of electroluminescent devices (ELD from porous silicon (PS and indium doped zinc oxide (ZnO:In junctions. PS presented photoluminescence (PL in the visible region of the electromagnetic spectrum. ZnO:In thin film was obtained by dip coating technique. SEM images and IR measurements showed the incorporation of the ZnO:In in the PS structure. Once obtained, the device was optically and electrically characterized. The ELD showed emission in the visible (450–850 nm and infrared region (900–1200 nm where it was electrically polarized. The visible emission was detected as luminescent spots on the surface. Electrical characterization was carried out by current-voltage (I-V curves. The I-V curves showed rectifying behavior. It was related to the quenching of the EL with the process that takes place in the PS when it was immersed in the precursor solution of the ZnO:In.

  10. Electroluminescence and Photoluminescence from a Fluorescent Cobalt Porphyrin Grafted on Graphene Oxide

    Science.gov (United States)

    Janghouri, Mohammad

    2017-10-01

    A new graphene oxide-cobalt porphyrin (GO-CoTPP) hybrid material has been used as an emissive layer in organic light-emitting diodes (OLEDs). Devices with fundamental structure of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS, 45 nm)/polyvinylcarbazole (PVK):2-(4-biphenyl)-5-(4- t-butylphenyl)-1,3,4-oxadiazole (PBD):GO-CoTPP (70 nm)/1,3,5-tris( N-phenylbenzimidazol-2-yl)-benzene (TPBI, 20 nm)/Al (150 nm) were fabricated. A red electroluminescence (EL) was obtained from thin-film PVK:PBD:CoTPP at 70 nm thickness. When CoTPP was covalently grafted on graphene oxide (GO) sheets, near-white EL was obtained. The white emission, which was composed of bluish green and red, is attributed to electroplex formation at the GO-CoTPP/PBD interface. Such electroplex emission between electrons and holes is a reason for the low turn-on voltage of the GO-CoTPP-based OLED. Maximum luminance efficiency of 1.43 cd/A with Commission International de l'Eclairage coordinates of 0.33 and 0.40 was achieved at current of 0.02 mA and voltage of 14 V.

  11. Comparison of electroluminescence intensity and photocurrent of polymer based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hoyer, Ulrich; Swonke, Thomas; Auer, Richard [Bayerisches Zentrum fuer Angewandte Energieforschung e.V., Erlangen (Germany); Pinna, Luigi; Brabec, Christoph J. [Bayerisches Zentrum fuer Angewandte Energieforschung e.V., Erlangen (Germany); I-MEET, University Erlangen (Germany); Stubhan, Tobias; Li, Ning [I-MEET, University Erlangen (Germany)

    2011-11-15

    The reciprocity theorem for solar cell predicts a linear relation between electroluminescence emission and photovoltaic quantum efficiency and an exponential dependence of the electroluminescence signal on the applied voltage. Both dependencies are experimentally verified for polymer based solar cells in this paper. Furthermore it is shown, that electroluminescence imaging of organic solar cells has the potential to visualize the photocurrent distribution significantly faster than standard laser beam induced current mapping (LBIC) techniques. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Highly stretchable electroluminescent skin for optical signaling and tactile sensing.

    Science.gov (United States)

    Larson, C; Peele, B; Li, S; Robinson, S; Totaro, M; Beccai, L; Mazzolai, B; Shepherd, R

    2016-03-04

    Cephalopods such as octopuses have a combination of a stretchable skin and color-tuning organs to control both posture and color for visual communication and disguise. We present an electroluminescent material that is capable of large uniaxial stretching and surface area changes while actively emitting light. Layers of transparent hydrogel electrodes sandwich a ZnS phosphor-doped dielectric elastomer layer, creating thin rubber sheets that change illuminance and capacitance under deformation. Arrays of individually controllable pixels in thin rubber sheets were fabricated using replica molding and were subjected to stretching, folding, and rolling to demonstrate their use as stretchable displays. These sheets were then integrated into the skin of a soft robot, providing it with dynamic coloration and sensory feedback from external and internal stimuli.

  13. Kinetics of transient electroluminescence in organic light emitting diodes

    Science.gov (United States)

    Shukla, Manju; Kumar, Pankaj; Chand, Suresh; Brahme, Nameeta; Kher, R. S.; Khokhar, M. S. K.

    2008-08-01

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - tdel), where tdel is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - tdec), where tdec is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated.

  14. Design of efficient electroluminescent lanthanide(III) complexes

    CERN Document Server

    You, B R; Park, N G; Kim, Y S

    2001-01-01

    The lanthanide complexes have been anticipated to exhibit high efficiency along with a narrow emission spectrum. Photoluminescence for the lanthanide complex is characterized by a high efficiency since both single and triplet excitons are involved in the luminescence process. However, the maximum external electroluminescence quantum efficiencies have exhibited values around 1% due to triplet-triplet annihilation at high current. Here, we proposed a new energy transfer mechanism to overcome triplet-triplet annihilation by the Eu complex doped into phosphorescent materials with triplet levels that were higher than single levels of the Eu complex. In order to show the feasibility of the proposed energy transfer mechanism and to obtain the optimal ligands and host material, we have calculated the effect depending on ligands as a factor that controls emission intensity in lanthanide complexes. The calculation shows that triplet state as well as singlet state of anion ligand affects on absorption efficiency indirec...

  15. Electroluminescent Polymers and Carbon Nanotubes for Flat Panel Displays

    Institute of Scientific and Technical Information of China (English)

    Liming Dai; Limin Dong; Mei Gao; Shaoming Huang; Oddvar Johansen; Albert W.H.Mau,Zoran Vasic; Berthold Winkler; Yongyuang Yang

    2000-01-01

    polymeric light-emitting diodes(LEDs) with sufficient brightness. efficiencies, low driving voltages, and various interesting features have been reported. The relatively short device lifetime, however, still remains as a major problem to be solved before any commercial applications will be realized. In this regard,carbon nanotubes have recently been proposed as more robust electron field emitters for flat panel displays. We have synthesised large arrays of vertically aligned carbon nanotubes, from which micropatterns of the aligned nanotubes suitable for flat panel displays were fabricated on various substrates. In this paper, we summarise our work on the synthesis and microfabrication of electroluminescent polymers and carbon nanotubes for flat panel displays with reference to other complementary work as appropriate.

  16. Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    FENG Lie-Feng; LI Yang; LI Ding; WANG Cun-Da; ZHANG Guo-Yi; YAO Dong-Sheng; LIU Wei-Fang; XING Peng-Fei

    2011-01-01

    Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup.With increasing frequency of the ac signal,the relative light intensity (RLI) clearly decreases.Furthermore,a peculiar asynchrony between the RLI and ac small-signal is observed.At frequencies higher than 10kHz,the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency.Using the classical recombination model of light-emitting diodes under ac small-signal modulation,these abnormal characteristics of modulated EL can be clearly explained.High-power light-emitting diodes (LEDs) have received great attention recently owing to their applications in energy-saving lights,display items and many other fields;therefore,the optical and electrical characteristics of LEDs at forward bias hold significant potential for research.[1-4] However,for a new kind of light emission device,the general research on its performance focuses on the light emission and dc currentvoltage (I-V) characteristics.%Frequency responses of modulated electroluminescence (EL) of light-emitting diodes were measured using a testing setup. With increasing frequency of the ac signal, the relative light intensity (RLI) clearly decreases. Furthermore, a peculiar asynchrony between the RLI and ac small-signal is observed. At frequencies higher than 10kHz, the RLI clearly lags behind the ac signal and the absolute value of the lagging angle is nearly proportional to the signal frequency. Using the classical recombination model of light-emitting diodes under ac small-signal modulation, these abnormal characteristics of modulated EL can be clearly explained.

  17. Structural, morphological and electroluminescence studies of Zno:Co nanophosphor

    Science.gov (United States)

    Singh, Anju; Vishwakarma, H. L.

    2016-09-01

    The nanoparticles of zinc oxide (ZnO) doped with various concentrations of cobalt (Co) were synthesized by chemical precipitation method in the presence of capping agent polyvinylpyrrolidone (PVP). The effect of doping concentration on structural and morphological properties has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Cell volume, bond length, texture coefficient, lattice constants and dislocation density are also studied. Here, we also compared the interplaner spacing and relative peak intensities from their standard values with different angles. Crystallite sizes have been calculated by Debye-Scherrer's formula whose values are decreasing with increase in cobalt content up to 3 %. It has been seen that the growth orientation of the prepared ZnO nanorods was (101). The XRD analysis also ensures that ZnO has a hexagonal (wurtzite) crystal structure. The electroluminescence (EL) cells were prepared by placing pure and cobalt-doped ZnO nanoparticles between ITO-coated conducting glass plate and aluminium foil. Alternating voltage of various frequencies was applied, and EL brightness at different voltages was measured and corresponding current was also recorded. The voltage dependence of electroluminescence (EL) brightness of the ZnO:Co shows exponential increase. The linear voltage-current characteristic indicates ohmic nature. The EL brightness at a particular voltage is found to increase by increasing Co doping, but for higher percentage of Co the EL brightness is reduced. It is also seen that Co does not influence the threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  18. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Science.gov (United States)

    Lin, Chung-Yi; Huang, Chih-Hsiung; Huang, Shih-Hsien; Chang, Chih-Chiang; Liu, C. W.; Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping

    2016-08-01

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al2O3/SiO2 passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al2O3/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al2O3 and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  19. Organic electroluminescent materials and devices emitting in UV and NIR regions

    Science.gov (United States)

    Pushkarev, A. P.; Bochkarev, M. N.

    2016-12-01

    Literature data on organic materials capable of generating electroluminescence in the UV (200–400 nm) and near-IR (700–2000 nm) spectral ranges are summarized and systematized. Organic, organometallic and coordination compounds are considered. Comparative analysis of materials is performed, and the composition and operating characteristics of light-emitting diodes based on them and possible mechanisms of electroluminescence generation are discussed. The bibliography includes 173 references.

  20. Magneto-electroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements

    OpenAIRE

    Liu,Feilong; Kelley, Megan R.; Crooker, Scott A.; Nie, Wanyi; Mohite, Aditya D.; Ruden, P. Paul; Smith, Darryl L.

    2014-01-01

    The effect of a magnetic field on the electroluminescence of organic light emitting devices originates from the hyperfine interaction between the electron/hole polarons and the hydrogen nuclei of the host molecules. In this paper, we present an analytical theory of magneto-electroluminescence for organic semiconductors. To be specific, we focus on bilayer heterostructure devices. In the case we are considering, light generation at the interface of the donor and acceptor layers results from th...

  1. Microstructural Study of Zinc Sulfide Thin Films ①②

    Institute of Scientific and Technical Information of China (English)

    CHENMouzhi; LIUZhaohong; 等

    1997-01-01

    The radio frequency magnetron sputtering(RFMS) technique is employed for preparing ZnS:Er electroluminescent films,and the information about surface states and internal bulk structure of the prepared films are obtained by using X-ray diffraction and X-ray photoelectron spectroscpy techniquesThe results reveal the microstructure and phase-transition characteristics of the films and provide the reference for seeking new material with high-brightness.

  2. Sputter deposition of rare earth doped zinc sulfide for near infrared electroluminescence

    Science.gov (United States)

    Glass, William Robert, III

    2003-10-01

    Near infrared emitting alternating current thin film electroluminescent (ACTFEL) phosphors were fabricated by simultaneous R.F. magnetron sputtering from both a target of doped ZnS and an undoped ZnS target. The intensities of both near infrared (NIR) and visible emission from ZnS doped with thulium (Tm), neodymium (Nd), or erbium (Er) fluorides were dependent on deposition parameters such as target duty cycle (varied from 25 to 100% independently for the two targets) and substrate temperature (140--180°C), with lower temperatures giving 400% better NIR brightness. By optimizing the rare earth concentration between 0.8 and 1.1 at%, the near infrared irradiance was improved by 400% for each dopant. The increase in brightness and optimal concentrations are attributed to decreased crystallinity and increased dopant interaction at higher rare earth concentrations. The brightness increase with decreasing deposition temperature was attributed to a reduction of thermal desorption of the ZnS during deposition, and consequently thicker films and optimized rare earth concentration. Luminescent decay lifetimes were short (20--40 musec) because of a high concentration of non-radiative pathways due to defects from the strain of the large rare earth ions on the ZnS lattice. The threshold voltage for visible and near infrared emission was identical despite emission of NIR and visible light resulting from electrons relaxing from low and high energy excited levels, respectively. The optical threshold voltages were identical to the electrical threshold voltages, and it was concluded that at the voltages necessary for electrical breakdown, the accelerated electrons had enough energy to excite either the visible or NIR emitting levels. Phosphors doped with Nd exhibited increased internal charge at higher dopant concentrations despite a reduction in phosphor field (i.e. reduced applied voltage) In contrast; the charge did not change appreciably for Er and decreased for Tm doped films

  3. Synthesis, photophysical, electrochemical and electroluminescence studies of red emitting phosphorescent Ir(III) heteroleptic complexes

    Indian Academy of Sciences (India)

    FARMAN ALI; PABITRA K NAYAK; N PERIASAMY; NEERAJ AGARWAL

    2017-09-01

    Five heteroleptic, cyclometalated (C∧N) Iridium(III) complexes of acetylacetone (acac) and 1-phenyl-isoquinoline (piq) derivatives, Ir(acac)(piq) ₂, Ir(acac)(2,4-difluoro-piq) ₂, Ir(acac)(4-trifluoromethylpiq) ₂, Ir(acac)(4-N,N-dimethyl-piq) ₂, Ir(acac)(4-acetyl-piq) ₂, were synthesized and characterized. The ((C∧N) ₂ Ir(acac) complexes in toluene showed phosphorescence (λmax = 598 nm to 658 nm) with quantum yields (0.1 to 0.32) and microsecond lifetimes (0.43 to 1.9 μs). The complexes were non-luminescent in thin films due to self-quenching but luminescent when lightly doped (5%) in a host organic material, 4,4' -Bis(Ncarbazolyl)- 1,1' -biphenyl (CBP). The HOMO levels determined using cyclic voltammetric oxidation potentials were in the range−5.48 to−5.80 eV. Electroluminescence properties and performance of the Ir complexes dopedin CBP (active layer) were studied in a multilayer (ITO/F4TCNQ/TPD/doped CBP/BCP/LiF/Al) organic light emitting device (OLED). The electroluminescense (EL) spectra of the device matched with the phosphorescent spectra of the Ir complexes. The turn-on voltage at ∼4.5 V, maximum brightness of 7600 cd/m² and current efficiency of ∼7.0 cd/A at a brightness of ∼100 cd/m² indicate that these are promising OLED materials.

  4. Electroluminescence emission patterns of organic light-emitting transistors based on crystallized fluorene-type polymers

    Science.gov (United States)

    Kajii, Hirotake; Ohtomo, Takahiro; Ohmori, Yutaka

    2017-03-01

    The electroluminescence (EL) emission patterns of organic light-emitting transistors (OLETs) based on crystallized poly(9,9-dioctylfluorene) (F8), poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) and poly(9,9-dioctylfluorene-co-dithienyl-benzothiadiazole) (F8TBT) films are investigated. For the single-layer devices and the mixed-layer device without an F8/F8BT interface, only line-shaped EL emission patterns are observed between source/drain (S/D) electrodes. For an F8BT (F8TBT)/F8 heterostructure device, a localized electric field is generated by the positive (negative) charges of the accumulated holes (electrons) in the F8 upper layer, which allow the injection of electrons (holes) in the F8BT (F8TBT) lower layer at a lower (higher) gate voltage. The F8/F8BT device exhibits unique light emission properties with a surface like EL emission pattern between S/D electrodes at a lower gate voltage. The interfacial structure is important for forming field-effect transistor channels along different organic layers to obtain a surface like emission between S/D electrodes. For the F8TBT/F8 OLET, the hole carrier transport mainly occurs at the F8TBT lower layer, and line-shaped EL emission patterns are observed in the vicinity of the source electrode upon varying the gate voltages owing to the worse carrier balance between the F8TBT lower layer and the F8 upper layer.

  5. Electroluminescent properties of three ternary europium complexes with different phenanthroline derivatives

    Institute of Scientific and Technical Information of China (English)

    BIAN Zuqiang; GAO Deqing; GUAN Min; XIN Hao; LI Fuyou; HUANG Chunhui; WANG Kezhi; JIN Linpei

    2004-01-01

    Three ternary Eu(Ⅲ) complexes with general formula of Eu(DBM)3LN (DBM =dibenzoylmethanate, and LN (N= 1-3 ) stand for three different 1,1 0-phenanthroline derivatives)have been synthesized for vacuum deposition films-based electroluminescent devices. The complex Eu(DBM)3L3 (L3 = 2-phenyl-3-[3-(carbazol-9-yl)propyl]imidazo[4,5-f]1,10-phenanthroline) was designed with an effort to combine the electron-transporting phenanthroline platform and the hole-transporting carbazole group into one molecule expecting to improve both electron and hole transporting properties simultaneously. The results show that the variation of the neutral ligands in Eu(Ⅲ) mixed ligand complexes is a simple and effective approach to the improvement in the thermal stability, PL and EL properties of materials. A double-layer device with the configuration of ITO/TPD (50 nm)/Eu(DBM)3L3 (50 nm)/Mgo.9Ago.1 (200 nm)/Ag (100 nm)exhibited Eu(Ⅲ)-based pure red emission with a maximum brightness of 561 cd/m2 at 16 V, and an onset driving voltage of 8 V. A device with the configuration of ITO/TPD (50 nm)/[Eu(DBM)3L3(5 nm):BCP (5 nm)]4/BCP (20 nm)/AIQ (10 nm) Mgo.gAgo.1 (110 nm)/Ag (100 nm) gave high efficient and pure red light emission with a luminance of 1419 cd/m2.

  6. Characteristics of electroluminescence phenomenon in virgin and thermally aged LDPE

    Science.gov (United States)

    Bani, N. A.; Abdul-Malek, Z.; Ahmad, H.; Muhammad-Sukki, F.; Mas'ud, A. A.

    2015-08-01

    High voltage cable requires a good insulating material such as low density polyethylene (LDPE) to be able to operate efficiently in high voltage stresses and high temperature environment. However, any polymeric material will experience degradation after prolonged application of high electrical stresses or other extreme conditions. The continuous degradation will shorten the life of a cable therefore further understanding on the behaviour of the aged high voltage cable needs to be undertaken. This may be observed through electroluminescence (EL) measurement. EL occurs when a solid-state material is subjected to a high electrical field stress and associated with the generation of charge carriers within the polymeric material and that these charges can be produced by injection, de-trapping and field-dissociation at the metal-polymer interface. The behaviour of EL emission can be affected by applied field, applied frequency, ageing time, ageing temperature and types of materials, among others. This paper focuses on the measurement of EL emission of additive-free LDPE thermally aged at different temperature subjected to varying electric stresses at 50Hz. It can be observed that EL emission increases as voltage applied is increased. However, EL emission decreases as ageing temperature is increased for varying applied voltage.

  7. Kinetics of transient electroluminescence in organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shukla, Manju; Brahme, Nameeta [School of Studies in Physics, Pt. Ravishanker Shukla University, Raipur (Congo, The Democratic Republic of the) 492010 (India); Kumar, Pankaj; Chand, Suresh [Center for Organic Electronics, National Physical Laboratory, Dr K S Krishnan Road, New Delhi-110012 (India); Kher, R S [Department of Physics, Government Science PG College, Bilaspur (Congo, The Democratic Republic of the) 495006 (India); Khokhar, M S K [Department of Rural Technology, GuruGhasidas University Bilaspur (Congo, The Democratic Republic of the) 495009 (India)], E-mail: manjushukla2003@gmail.com

    2008-08-21

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - t{sub del}), where t{sub del} is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - t{sub dec}), where t{sub dec} is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated.

  8. Pattern Visual Evoked Potentials Elicited by Organic Electroluminescence Screen

    Directory of Open Access Journals (Sweden)

    Celso Soiti Matsumoto

    2014-01-01

    Full Text Available Purpose. To determine whether organic electroluminescence (OLED screens can be used as visual stimulators to elicit pattern-reversal visual evoked potentials (p-VEPs. Method. Checkerboard patterns were generated on a conventional cathode-ray tube (S710, Compaq Computer Co., USA screen and on an OLED (17 inches, 320 × 230 mm, PVM-1741, Sony, Tokyo, Japan screen. The time course of the luminance changes of each monitor was measured with a photodiode. The p-VEPs elicited by these two screens were recorded from 15 eyes of 9 healthy volunteers (22.0 ± 0.8 years. Results. The OLED screen had a constant time delay from the onset of the trigger signal to the start of the luminescence change. The delay during the reversal phase from black to white for the pattern was 1.0 msec on the cathode-ray tube (CRT screen and 0.5 msec on the OLED screen. No significant differences in the amplitudes of P100 and the implicit times of N75 and P100 were observed in the p-VEPs elicited by the CRT and the OLED screens. Conclusion. The OLED screen can be used as a visual stimulator to elicit p-VEPs; however the time delay and the specific properties in the luminance change must be taken into account.

  9. Hybrid electroluminescent device based on MEH-PPV and ZnO

    Science.gov (United States)

    Hewidy, Dina.; Gadallah, A.-S.; Fattah, G. Abdel

    2017-02-01

    Hybird organic/inorganic electroluminescent device based on the structure of glass/ITO/PEDOT:PSS/MEH-PPV/ZnO/ZnO submicrorods/Al has been manufactured. Spin coating has been used to deposit both PEDOT:PSS and MEH-PPV. Two-step process has been used to synthesis ZnO submicrorods, namely, spin coating and chemical bath deposition. Changing the dimensions of the ZnO submicrorods in this layer structure has been investigated to improve the performance of the organic/inorganic electroluminescence device. Such layer structure provides electroluminescence with narrow emission bands due to a high gain with this structure. X-ray diffraction patterns and scanning electron microscope images show that ZnO submicrorods have hexagon structure. Current-voltage curve for the structure has been reported. Electroluminescence curves (electroluminescence intensity versus wavelength) at different bias voltages have been presented and these results show narrowing in full width at half maximum in the spectra at high current density compared to photoluminescence excitation. The narrowing in the spectrum has been explained.

  10. Fourier transform infrared spectroscopy approach for measurements of photoluminescence and electroluminescence in mid-infrared

    Science.gov (United States)

    Zhang, Y. G.; Gu, Y.; Wang, K.; Fang, X.; Li, A. Z.; Liu, K. H.

    2012-05-01

    An improved Fourier transform infrared spectroscopy approach adapting to photoluminescence and electroluminescence measurements in mid-infrared has been developed, in which diode-pumped solid-state excitation lasers were adopted for photoluminescence excitation. In this approach, three different Fourier transform infrared modes of rapid scan, double modulation, and step scan were software switchable without changing the hardware or connections. The advantages and limitations of each mode were analyzed in detail. Using this approach a group of III-V and II-VI samples from near-infrared extending to mid-infrared with photoluminescence intensities in a wider range have been characterized at room temperature to demonstrate the validity and overall performances of the system. The weaker electroluminescence of quantum cascade lasers in mid-infrared band was also surveyed at different resolutions. Results show that for samples with relatively strong photoluminescence or electroluminescence out off the background, rapid scan mode is the most preferable. For weaker photoluminescence or electroluminescence overlapped with background, double modulation is the most effective mode. To get a better signal noise ratio when weaker photoluminescence or electroluminescence signal has been observed in double modulation mode, switching to step scan mode should be an advisable option despite the long data acquiring time and limited resolution.

  11. Fourier transform infrared spectroscopy approach for measurements of photoluminescence and electroluminescence in mid-infrared.

    Science.gov (United States)

    Zhang, Y G; Gu, Y; Wang, K; Fang, X; Li, A Z; Liu, K H

    2012-05-01

    An improved Fourier transform infrared spectroscopy approach adapting to photoluminescence and electroluminescence measurements in mid-infrared has been developed, in which diode-pumped solid-state excitation lasers were adopted for photoluminescence excitation. In this approach, three different Fourier transform infrared modes of rapid scan, double modulation, and step scan were software switchable without changing the hardware or connections. The advantages and limitations of each mode were analyzed in detail. Using this approach a group of III-V and II-VI samples from near-infrared extending to mid-infrared with photoluminescence intensities in a wider range have been characterized at room temperature to demonstrate the validity and overall performances of the system. The weaker electroluminescence of quantum cascade lasers in mid-infrared band was also surveyed at different resolutions. Results show that for samples with relatively strong photoluminescence or electroluminescence out off the background, rapid scan mode is the most preferable. For weaker photoluminescence or electroluminescence overlapped with background, double modulation is the most effective mode. To get a better signal noise ratio when weaker photoluminescence or electroluminescence signal has been observed in double modulation mode, switching to step scan mode should be an advisable option despite the long data acquiring time and limited resolution.

  12. Methods and apparatus of spatially resolved electroluminescence of operating organic light-emitting diodes using conductive atomic force microscopy

    Science.gov (United States)

    Hersam, Mark C. (Inventor); Pingree, Liam S. C. (Inventor)

    2008-01-01

    A conductive atomic force microscopy (cAFM) technique which can concurrently monitor topography, charge transport, and electroluminescence with nanometer spatial resolution. This cAFM approach is particularly well suited for probing the electroluminescent response characteristics of operating organic light-emitting diodes (OLEDs) over short length scales.

  13. Spectroscopic investigation of the interfaces in new poly(9,9-dihexyl–9H-fluorene-2,7- diyl based electroluminescent devices

    Directory of Open Access Journals (Sweden)

    C. Donitsi

    2014-01-01

    Full Text Available The highest occupied and lowest unoccupied states of the new electroluminescent material poly(9,9-dihexyl–9H- fluorene-2,7-diyl (PPV-D and polyvinylcarbazole (PVK are investigated using ultraviolet photoelectron and inverse photoemission spectroscopies. Hole injection barriers are determined for interfaces between indium-tin oxide covered substrates with work function ranging from 4.4 to 4.7 eV and these two polymers. Vacuum level alignment with flat bands away from the interface is found when the interface hole barrier is 0.6 eV or larger. Band bending away from the Fermi level occurs when the hole barrier is smaller than 0.6 eV. This is due to the accumulation charges at the interface with the polymer when the injection barrier is small. The resulting field bends the polymer levels to limit charge incoming in the bulk of the film. The efficiency of the electroluminescent structures is strongly influenced by the different energy levels alignment at the layer interfaces.

  14. Novel Mechano-Luminescent Sensors Based on Piezoelectric/Electroluminescent Composites

    Directory of Open Access Journals (Sweden)

    Yunzhang Fang

    2011-04-01

    Full Text Available A high-sensitivity mechano-luminescent sensor was fabricated on the basis of piezoelectric/electroluminescent composites. The working principle of this mechano-luminescent sensor was elucidated by analyzing the relationship between the piezoelectric-induced charges and the electroluminescent effects. When a stress is applied on the piezoelectric layer, electrical charges will be induced at both the top and bottom sides of the piezoelectric layer. The induced electrical charges will lead to a light output from the electroluminescent layer, thus producing a mechano-luminescence effect. By increasing the vibration strength or frequency applied, the mechano-luminescence output can be obviously enhanced. Mechano-luminescence sensors have potential in smart stress-to-light devices, such as foot-stress-distribution-diagnosis systems and dynamic-load-monitors for bridge hanging cables.

  15. Tunneling electron induced molecular electroluminescence from individual porphyrin J-aggregates

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Qiushi; Zhang, Chao; Zhang, Yang, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn; Zhang, Yao; Liao, Yuan; Dong, Zhenchao, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2015-07-27

    We investigate molecular electroluminescence from individual tubular porphyrin J-aggregates on Au(111) by tunneling electron excitations in an ultrahigh-vacuum scanning tunneling microscope (STM). High-resolution STM images suggest a spiral tubular structure for the porphyrin J-aggregate with highly ordered “brickwork”-like arrangements. Such aggregated nanotube is found to behave like a self-decoupled molecular architecture and shows red-shifted electroluminescence characteristics of J-aggregates originated from the delocalized excitons. The positions of the emission peaks are found to shift slightly depending on the excitation sites, which, together with the changes in the observed spectral profiles with vibronic progressions, suggest a limited exciton coherence number within several molecules. The J-aggregate electroluminescence is also found unipolar, occurring only at negative sample voltages, which is presumably related to the junction asymmetry in the context of molecular excitations via the carrier injection mechanism.

  16. Dye linked conjugated homopolymers: using conjugated polymer electroluminescence to optically pump porphyrin-dye emission

    DEFF Research Database (Denmark)

    Nielsen, K.T.; Spanggaard, H.; Krebs, Frederik C

    2004-01-01

    . Electroluminescent devices of the homopolymer itself and of the zinc-porphyrin containing polymer were prepared and the nature of the electroluminescence was characterized. The homopolymer segments were found to optically pump the emission of the zinc-porphyrin dye moities. The homopolymer exhibits blue......Zinc-porphyrin dye molecules were incorporated into the backbone of a conjugated polymer material by a method, which allowed for the incorporation of only one zinc-porphyrin dye molecule into the backbone of each conjugated polymer molecule. The electronic properties of the homopolymer were......-green emission and the zinc-porphyrin linked homopolymers emit near-infrared/infrared light. This was demonstrated to be due to electroluminescence pumping of the zinc-porphyrin moieties that were covalently linked to homopolymer material. When only one zinc-porphyrin dye was incorporated into the backbone...

  17. Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy.

    Science.gov (United States)

    Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

    2015-01-01

    An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

  18. Preparation of CdSe nanocrystals in organic system and electroluminescence characteristics of the devices

    Institute of Scientific and Technical Information of China (English)

    TANG Ai-wei; TENG Feng; GAO Yin-hao; LI Dan; LIANG Chun-jun; WANG Yong-sheng

    2006-01-01

    CdSe nanocrystals were prepared by a colloidal chemical approach using CdO and Se powder as precursors in an organic system of TOPO/TOP,and a multilayered electroluminescence device was fabricated with CdSe as emitting layer.The results show that the photoluminescence spectra of the CdSe nanocrystals almost cover the whole visible region and the full width at half maximum (FWHM) is appropriately 200 nm.The electroluminescence spectrum of the multilayered device at different voltages was investigated.The electroluminescence intensity is enhanced with increasing operating voltage,and the CIE coordinates of the device change from (0.34,0.37) at 6 V to (0.44,0.46)at 20 V as the operating voltage increases,which indicates that the colors of the device could be tuned by the operating voltage.

  19. Energy and Charge Transfer from Guest to Host in Doped Organic Electroluminescent Devices

    Institute of Scientific and Technical Information of China (English)

    李宏建; 彭景翠; 许雪梅; 瞿述; 罗小华; 赵楚军

    2002-01-01

    The luminescence properties of doped organic electroluminescent devices are explained by means off Hamiltonian model. The results show that there is a corresponding relation between the amount of transferred charge and the change of the energy originating from charge transfer, and the relation can be influenced by dopant concentration.As the amount of transferred charge increases, the total energy decreases and the luminescence intensity increases.Therefore, we deduce that the energy transfer from guest to host may be derived from the charge transfer. For a given organic electroluminescent device, the maximum value of the conductivity can be observed in a specific dopant concentration. The calculated results show that the greater the transferred charges, the higher the conductivities in doped organic electroluminescent devices. The results agree basically with experimental results.

  20. Electroluminescence from indirect band gap semiconductor ReS2

    Science.gov (United States)

    Gutiérrez-Lezama, Ignacio; Aditya Reddy, Bojja; Ubrig, Nicolas; Morpurgo, Alberto F.

    2016-12-01

    It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS2 are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the PL spectra of this material has been detected, whose energy is smaller than the supposed direct gap. To address this issue we exploit the properties of ionic liquid gated field-effect transistors (FETs) to investigate the gap structure of bulk ReS2. Using these devices, whose high quality is demonstrated by a record high electron FET mobility of 1100 cm2 V-1 s-1 at 4 K, we can induce hole transport at the surface of the material and determine quantitatively the smallest band gap present in the material, irrespective of its direct or indirect nature. The value of the band gap is found to be 1.41 eV, smaller than the 1.5 eV direct optical transition but in good agreement with the energy of the indirect optical transition, providing an independent confirmation that bulk ReS2 is an indirect band gap semiconductor. Nevertheless, contrary to the case of more commonly studied semiconducting TMDs (e.g., MoS2, WS2, etc) in their bulk form, we also find that ReS2 FETs fabricated on bulk crystals do exhibit electroluminescence when driven in the ambipolar injection regime, likely because the difference between direct and indirect gap is only 100 meV. We conclude that ReS2 does deserve more in-depth investigations in relation to possible opto-electronic applications.

  1. PECASE: Nanostructure Hybrid Organic/Inorganic Materials for Active Opto-Electronic Devices

    Science.gov (United States)

    2011-01-03

    intergration and active device development: (1) the directed structuring of materials at the nanoscale through pattening and material growth methods, (2) the...electroluminescence (EL) that can be of use in fields as diverse as optical communications , spectroscopy, and environmental and industrial sensing. The RC structure...TFEL) devices already occupy a segment of the large-area, high-resolution, flat-panel-display market . The AC-TFEL displays, which consist of a

  2. Room temperature electroluminescence from mechanically formed van der Waals III–VI homojunctions and heterojunctions

    OpenAIRE

    Balakrishnan, Nilanthy; Kudrynskyi, Zakhar R.; Fay, Mike W.; Mudd, Garry W.; Svatek, Simon A; Makarovsky, Oleg; Kovalyuk, Zakhar D.; Eaves, Laurence; Peter H. Beton; Patanè, Amalia

    2014-01-01

    Room temperature electroluminescence from semiconductor junctions is demonstrated. The junctions are fabricated by the exfoliation and direct mechanical adhesion of InSe and GaSe van der Waals layered crystals. Homojunction diodes formed from layers of p- and n-type InSe exhibit electroluminescence at energies close to the bandgap energy of InSe (Eg= 1.26 eV). In contrast, heterojunction diodes formed by combining layers of p-type GaSe and n-type InSe emit photons at lower energies, which is ...

  3. Electroluminescent properties of three ternary europium complexes with different phenanthroline derivatives

    Institute of Scientific and Technical Information of China (English)

    BIAN; Zuqiang; GAO; Deqing; GUAN; Min; XIN; Hao; LI; Fuyou

    2004-01-01

    [1]Sun, P. P., Duan, J. P., Shih, H. T. et al., Europium complex as a highly efficient red emitter in electroluminescent devices, Appl.Phys. Lett., 2002, 81: 792-793.[2]Heil, H., Steiger, J., Schmechel, R. et al., Tri(dibenzolymethane)(monophenanthroline) europium(Ⅲ) based red emitting organic light emitting diodes, J. Appl. Phys., 2001, 90: 5357-5362.[3]Liang, C. L., Zhao, D., Hong, Z. R. et al., Improved performance of electroluminescent devices based on an europium complex,Appl. Phys. Lett., 2000, 76: 67-69.[4]Kido, J., Hayase, H., Honggawa, K. et al., Bright red light-emitting organic electroluminescent devices having a europium complex as an emitter, Appl. Phys. Lett., 1994, 65: 2124-2126.[5]Mitsuharu, N., Kazutaka, I., Masanao, E., Efficient red electroluminescence from new europium complex, Chem. Lett., 2001:320-321.[6]Kido, J., Nagai, K., Okamoto, Y., Organic electroluminescem devices using lanthanide complexes, J. Alloys. Compd., 1993, 192:30-33.[7]Wang, J., Wang, R., Yang, J. et al., First oxadiazole-functionalized terbium(Ⅲ) β-diketonate for organic electroluminescence, J. Am.Chem. Soc., 2001, 123: 6179-6180.[8]Capecchi, S., Renault, O., Moon, D. G., High-efficiency organic electroluminescent devices using an organoterbium emitter, Adv.Mater., 2000, 12: 1591-1594.[9]Huang, L., Wang, K. Z., Huang, C. H. et al., Synthetic and electroluminescent properties of two novel europium complexes with benzimidazole derivatives as second ligands, Synth. Met., 2002,128: 241-245.[10]Huang, L., Wang, K. Z., Huang, C. H. et al., Bright red electroluminescent devices using novel second-ligand-contained europium complexes as emitting layers, J. Mater. Chem., 2001, 11: 790-793.[11]Hu, W. P., Matsumura, M., Wang, M. Z. et al., Efficient red electroluminescence from devices having multilayers of an europium complex, Appl. Phys. Lett., Appl. Phys. Lett., 2000, 77: 4271-4273.[12]Yu, G., Liu, Y. Q., Wu, X. et al., Soluble

  4. Preparation and characterization of electroluminescent devices based on complexes of {beta}-diketonates of Tb{sup 3+}, Eu{sup 3+}, Gd{sup 3+} ions with macrocyclic ligands and UO{sub 2}{sup 2+} films; Preparacao e caracterizacao de dispositivos eletroluminescentes de complexos de {beta}-dicetonados de ions Tb{sup 3+}, Eu{sup 3+}, Gd{sup 3+} com ligantes macrociclicos e filmes de UO{sub 2}{sup 2+}

    Energy Technology Data Exchange (ETDEWEB)

    Gibelli, Edison Bessa

    2010-07-01

    Complexes containing Rare Earth ions are of great interest in the manufacture of electro luminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR{sup 3+}) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth {beta}-diketonate complexes (Tb{sup 3+}, Eu{sup 3+} and Gd{sup 3+}) and (tta - thenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO{sub 2}{sup 2+}. The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition). (author)

  5. Red electroluminescence of ruthenium sensitizer functionalized by sulfonate anchoring groups.

    Science.gov (United States)

    Shahroosvand, Hashem; Abbasi, Parisa; Mohajerani, Ezeddin; Janghouri, Mohammad

    2014-06-28

    We have synthesized five novel Ru(ii) phenanthroline complexes with an additional aryl sulfonate ligating substituent at the 5-position [Ru(L)(bpy)2](BF4)2 (1), [Ru(L)(bpy)(SCN)2] (2), [Ru(L)3](BF4)2 (3), [Ru(L)2(bpy)](BF4)2 (4) and [Ru(L)(BPhen)(SCN)2] (5) (where L = 6-one-[1,10]phenanthroline-5-ylamino)-3-hydroxynaphthalene 1-sulfonic, bpy = 2,2'-bipyridine, BPhen = 4,7-diphenyl-1,10-phenanthroline), as both photosensitizers for oxide semiconductor solar cells (DSSCs) and light emitting diodes (LEDs). The absorption and emission maxima of these complexes red shifted upon extending the conjugation of the phenanthroline ligand. Ru phenanthroline complexes exhibit broad metal to ligand charge transfer-centered electroluminescence (EL) with a maximum near 580 nm. Our results indicated that a particular structure (2) can be considered as both DSSC and OLED devices. The efficiency of the LED performance can be tuned by using a range of ligands. Device (2) has a luminance of 550 cd m(-2) and maximum efficiency of 0.9 cd A(-1) at 18 V, which are the highest values among the five devices. The turn-on voltage of this device is approximately 5 V. The role of auxiliary ligands in the photophysical properties of Ru complexes was investigated by DFT calculation. We have also studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phenanthroline complexes and an iodine redox electrolyte. A solar energy to electricity conversion efficiency (η) of 0.67% was obtained for Ru complex (2) under standard AM 1.5 irradiation with a short-circuit photocurrent density (Jsc) of 2.46 mA cm(-2), an open-circuit photovoltage (Voc) of 0.6 V, and a fill factor (ff) of 40%, which are all among the highest values for ruthenium sulfonated anchoring groups reported so far. Monochromatic incident photon to current conversion efficiency was 23% at 475 nm. Photovoltaic studies clearly indicated dyes with two SCN substituents yielded a higher Jsc for the

  6. Automatic Detection and Evaluation of Solar Cell Micro-Cracks in Electroluminescence Images Using Matched Filters

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2016-01-01

    A method for detecting micro cracks in solar cell using two dimensional matched filters was developed, derived from the electroluminescence intensity profile of typical microcracks. We describe the image processing steps to obtain a binary map with the location of the micro-cracks. Finally, we sh...

  7. Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids

    Institute of Scientific and Technical Information of China (English)

    Gong-Ru Lin

    2007-01-01

    The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.

  8. Relationship between structure and electroluminescence of oligo(y-phenylenevinylene)s

    NARCIS (Netherlands)

    Stalmach, U; Detert, H; Meier, H; Gebhardt, [No Value; Haarer, D; Bacher, A

    1998-01-01

    The preparation of LEDs with poly(p-phenylenevinylene) (PPV) as emitting material is well established, However, due to the presence of a distribution of conjugated chain lengths in the polymer, systematic investigations of the electroluminescence with polymeric materials are difficult, as far as the

  9. Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method

    Institute of Scientific and Technical Information of China (English)

    XIA Xiao-Chuan; DU Guo-Tong; WANG Hui; ZHAO Yang; WANG Jin; ZHAO Jian-Ze; SHI Zhi-Feng; LI Xiang-Ping; LIANG Hong-Wei; ZHANG Bao-Lin

    2011-01-01

    Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method.Under our growth conditions the main doping element is arsenic,which was confirmed by x-ray photoelectroscopy.X-ray diffraction measurements revealed that the p-ZnO:As film was still in the (002) preferred orientation.The Hall test showed that the hole concentration of the p-ZnO:As film was 2.6 × 1017 cm-3.The acceptor level was located at 135 meV above the valance band maximum,according to the low-temperature photoluminescence results.We then fabricated a p-ZnO:As/n-Si hetero junction light-emitting device.Its current-voltage curve showed the typical rectifying behavior of a p-n diode.At forward current injections,the electroluminescence peaks,which cover the ultraviolet-to-visible region,could be clearly detected.ZnO is a Ⅱ-Ⅵ compound semiconductor with a wide direct gap (3.37eV) and a high exciton binding energy (60meV).It has been studied as the candidate material for ultraviolet (UV) light emitting devices (LEDs).Many methods have been used to prepare ZnO films.[1,2] Among them,the metal organic chemical vapor deposition (MOCVD) method has its own excellent advantages in industrial applications.Today,the preparation of p-ZnO is still a challenge.%Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method. Under our growth conditions the main doping element is arsenic, which was confirmed by x-ray photoelectroscopy. X-ray diffraction measurements revealed that the p-ZnO:As Him was still in the (002) preferred orientation. The Hall test showed that the hole concentration of the p-ZnO:As film was 2.6 × 1017 cm-3. The acceptor level was located at 135 meV above the valance band maximum, according to the low-temperature photoluminescence results. We then fabricated a p-ZnO:As/n-Si heterojunction light-emitting device. Its current-voltage curve showed the typical rectifying behavior of a p-n diode

  10. Series resistance mapping of Cu(In,Ga)Se{sub 2} solar cells by voltage dependent electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Daume, Felix; Puttnins, Stefan [Solarion AG, Ostende 5, 04288 Leipzig (Germany); Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany); Scheit, Christian; Rahm, Andreas [Solarion AG, Ostende 5, 04288 Leipzig (Germany); Grundmann, Marius [Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany)

    2011-07-01

    Cu(In,Ga)Se{sub 2} (CIGSe) thin film solar cells deposited on flexible polyimide foil promising innovative applications and a fabrication in continuous roll-to-roll processes currently reach efficiencies up to 17.6 %. The optimization of the solar cell efficiency requires the reduction of inherent losses in the cell. In order to achieve this goal preferably spatially resolved access to parameters characterizing ohmic losses like series and shunt resistances are indispensable. We apply an interpretation method for electroluminescence (EL) images taken at different voltages which is known for solar cells made of crystalline silicon from literature to solar cells made of polycrystalline CIGSe. The theory of this method to obtain a mapping of the series resistance and the EL imaging process as well as the data interpretation ils reviewed and demonstrated on an example. Furthermore, the benefit of this method for the characterization of solar cells under accelerated aging conditions (damp heat) which is important for the estimation of the long-term stability is shown.

  11. Towards Monodisperse Star-Shaped Ladder-Type Conjugated Systems: Design, Synthesis, Stabilized Blue Electroluminescence and Amplified Spontaneous Emission.

    Science.gov (United States)

    Lai, Wen-Yong; Jiang, Yi; Fang, Mei; Chang, Si-Ju; Huang, Jin-Jin; Chu, Shuang-Quan; Hu, Shan-Ming; Liu, Cheng-Fang; Huang, Wei

    2017-02-14

    A novel series of monodisperse star-shaped ladder-type oligo(p-phenylene)s, named as TrL-n (n = 1-3), have been explored. Their thermal and electrochemical properties, fluorescence transients, photoluminescence quantum yields, density functional theory calculations, electroluminescence (EL) and amplified spontaneous emission (ASE) properties have been systematically investigated to unravel the molecular design on optoelectronic properties. The resulting materials showed excellent structural perfection free of chemical defects, exhibiting great thermal stability (Td: 404-418°C and Tg:147-184°C) and amorphous glassy morphologies. Compared with their corresponding linear counterparts FL-m (m = 1-3), TrL-n showed only little bathochromic shifts (5-12 nm) for the absorption maxima λmax in both solution and films. The star-shaped ladder-type compounds exhibited enhanced optical stability and suppressed low-energy emission. Their EL spectra exhibited excellent stability with increasing the driving voltage from 6 to 12 V. Moreover, superior low ASE thresholds were recorded for TrL-n compared with FL-m. Rather low ASE threshold (29 nJ/pulse or 1.60 μJ/cm2) was recorded for TrL-3, demonstrating their promising potential as excellent gain media. This study provides a novel design concept to develop monodisperse star-shaped ladder-type materials with excellent structural perfection, which are vital for shedding light on exploring robust organic emitters for optoelectronic applications.

  12. Color-tunable electroluminescence from Eu-doped TiO(2)/p(+)-Si heterostructured devices: engineering of energy transfer.

    Science.gov (United States)

    Zhu, Chen; Lv, Chunyan; Wang, Canxing; Sha, Yiping; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2015-02-09

    We report on color-tunable electroluminescence (EL) from TiO(2):Eu/p(+)-Si heterostructured devices using different TiO(2):Eu films in terms of Eu content and annealing temperature. It is found that the Eu-related emissions are activated by the energy transferred from TiO(2) host via oxygen vacancies, at the price of weakened oxygen-vacancy-related emissions. Both the higher Eu content and the higher annealing temperature for TiO(2):Eu films facilitate the aforementioned energy transfer. In this context, the dominant EL from the TiO(2):Eu/p(+)-Si heterostructured devices can be transformed from oxygen-vacancy-related emissions into Eu-related emissions with increasing Eu-content and annealing temperature for TiO(2):Eu films, exhibiting different colors of emanated light. We believe that this work sheds light on developing silicon-based red emitters using the Eu-doped oxide semiconductor films.

  13. Research on the electronic and optical properties of polymer and other organic molecular thin films

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-02-01

    The main goal of the work is to find materials and methods of optimization of organic layered electroluminescent cells and to study such properties of polymers and other organic materials that can be used in various opto-electronic devices. The summary of results obtained during the first year of work is presented. They are: (1) the possibility to produce electroluminescent cells using a vacuum deposition photoresist technology for commercial photoresists has been demonstrated; (2) the idea to replace the polyaryl polymers by other polymers with weaker hole conductivity for optimization of electroluminescent cells with ITO-Al electrodes has been suggested. The goal is to obtain amorphous processable thin films of radiative recombination layers in electroluminescent devices; (3) procedures of preparation of high-quality vacuum-deposited poly (p-phenylene) (PPP) films on various substrates have been developed; (4) it was found for the first time that the fluorescence intensity of PPP films depends on the degree of polymerization; (5) the role of interfaces between organic compounds, on one side, and metals or semiconductors, on the other side, has been studied and quenching of the fluorescence caused by semiconductor layer in thin sandwiches has been observed; (6) studies of the dynamics of photoexcitations revealed the exciton self-trapping in quasi-one-dimensional aggregates; and (7) conditions for preparation of highly crystalline fullerene C{sub 60} films by vacuum deposition have been found. Composites of C{sub 60} with conjugated polymers have been prepared.

  14. Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

    Science.gov (United States)

    Ren, C. X.; Rouet-Leduc, B.; Griffiths, J. T.; Bohacek, E.; Wallace, M. J.; Edwards, P. R.; Hopkins, M. A.; Allsopp, D. W. E.; Kappers, M. J.; Martin, R. W.; Oliver, R. A.

    2016-11-01

    The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.

  15. Mechanism of hot electron electroluminescence in GaN-based transistors

    Science.gov (United States)

    Brazzini, Tommaso; Sun, Huarui; Sarti, Francesco; Pomeroy, James W.; Hodges, Chris; Gurioli, Massimo; Vinattieri, Anna; Uren, Michael J.; Kuball, Martin

    2016-11-01

    The nature of hot electron electroluminescence (EL) in AlGaN/GaN high electron mobility transistors is studied and attributed to Bremsstrahlung. The spectral distribution has been corrected, for the first time, for interference effects due to the multilayered device structure, and this was shown to be crucial for the correct interpretation of the data, avoiding artefacts in the spectrum and misinterpretation of the results. An analytical expression for the spectral distribution of emitted light is derived assuming Bremsstrahlung as the only origin and compared to the simplified exponential model for the high energy tail commonly used for electron temperature extraction: the electron temperature obtained results about 20% lower compared to the approximated exponential model. Comparison of EL intensity for devices from different wafers illustrated the dependence of EL intensity on the material quality. The polarization of electroluminescence also confirms Bremsstrahlung as the dominant origin of the light emitted, ruling out other possible main mechanisms.

  16. A New Distyrylarylene Derivative Used as Blue Light Emitter in Organic Electroluminescent Device

    Institute of Scientific and Technical Information of China (English)

    郑新友; 朱文清; 等

    2002-01-01

    A new blue electroluminescent material,distyrylarylene(DSA)derivative,4,4'-bis[2,2-(1-naphthyl,phenyl)vinyl]-1,1-biphenyl(NPVBi)is designed and synthesized.The DSA derivative shows better thermal stability because of its high glass transition temperature.A blue organic light emitting diode(OLED0with the structure ITO/TPD/NPVBi/Alq/LiF/Al is studied.The electroluminescent(EL0spectrum of the OLED exhibits that light emission originates from NPVBi with a peak at 460nm,its Commission Internationale de l'Eclairage(CIE)color coordinates are x=0.16,y=0.15,and showing independence of CIE color coordinates on current density.The new DSA derivative is expectable as a new candidate for blue light emitter in OLEDs.

  17. Structural and luminescence properties of nanostructured ZnS:Mn

    Science.gov (United States)

    Adachi, Daisuke; Hasui, Shigeki; Toyama, Toshihiko; Okamoto, Hiroaki

    2000-08-01

    We have studied structural and luminescence properties of nanostructured (NS-) ZnS:Mn which has potential applications in thin-film electroluminescence (TFEL) devices. As a NS-ZnS:Mn system, a ZnS:Mn/Si3N4 multilayer having thicknesses of 2.5 nm for ZnS and 0.6 nm for Si3N4 was prepared by a conventional rf-magnetron sputtering method. Grazing incidence x-ray reflectometry and x-ray diffractometry show that ZnS:Mn nanocrystals were formed between the amorphous Si3N4 layers. Photoluminescence intensity associated with the Mn2+ transitions per total thickness of the ZnS:Mn layers is increased in NS-ZnS:Mn in comparison with that of the ZnS:Mn thin film, indicating the effects due to quantum confinement. The TFEL device with NS-ZnS:Mn as an emission layer exhibits a reddish-orange broad band emission with the maximum luminance of 2.8 cd/m2 under the 1-kHz sinusoidal wave operation at a voltage of 20.5 V0-p.

  18. Quantification of Solar Cell Failure Signatures Based on Statistical Analysis of Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2017-01-01

    We demonstrate a method to quantify the extent of solar cell cracks, shunting, or damaged cell interconnects, present in crystalline silicon photovoltaic (PV) modules by statistical analysis of the electroluminescence (EL) intensity distributions of individual cells within the module. From the EL...... operation. The method can be easily automated for quality control by module manufacturers or installers, or as a diagnostic tool by plant operators and diagnostic service providers....

  19. Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

    Science.gov (United States)

    Forneris, J.; Battiato, A.; Gatto Monticone, D.; Picollo, F.; Amato, G.; Boarino, L.; Brida, G.; Degiovanni, I. P.; Enrico, E.; Genovese, M.; Moreva, E.; Traina, P.; Verona, C.; Verona Rinati, G.; Olivero, P.

    2015-04-01

    Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of color centers in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the color centers. With this purpose, buried graphitic electrodes with a spacing of 10 μm were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He+ micro-beam. The current flowing in the gap region between the electrodes upon the application of a 450 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of color centers localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centers (NV0, λZPL = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400-500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected (λZPL = 536.3 nm, λZPL = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centers. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

  20. Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Forneris, J., E-mail: jacopo.forneris@unito.it [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Battiato, A.; Gatto Monticone, D. [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Picollo, F. [Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Amato, G.; Boarino, L.; Brida, G.; Degiovanni, I.P.; Enrico, E.; Genovese, M.; Moreva, E.; Traina, P. [Istituto Nazionale di Ricerca Metrologica (INRiM), Torino (Italy); Verona, C.; Verona Rinati, G. [Department of Industrial Engineering, University of Roma “Tor Vergata”, Roma (Italy); Olivero, P. [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy)

    2015-04-01

    Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of color centers in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the color centers. With this purpose, buried graphitic electrodes with a spacing of 10 μm were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He{sup +} micro-beam. The current flowing in the gap region between the electrodes upon the application of a 450 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of color centers localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centers (NV{sup 0}, λ{sub ZPL} = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400–500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected (λ{sub ZPL} = 536.3 nm, λ{sub ZPL} = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centers. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

  1. Quantum Dots for Wide Color Gamut Displays from Photoluminescence to Electroluminescence

    Science.gov (United States)

    Kang, Yongyin; Song, Zhicheng; Jiang, Xiaofang; Yin, Xia; Fang, Long; Gao, Jing; Su, Yehua; Zhao, Fei

    2017-02-01

    Monodisperse quantum dots (QDs) were prepared by low-temperature process. The remarkable narrow emission peak of the QDs helps the liquid crystal displays (LCD) and electroluminescence displays (QD light-emitting diode, QLED) to generate wide color gamut performance. The range of the color gamut for QD light-converting device (QLCD) is controlled by both the QDs and color filters (CFs) in LCD, and for QLED, the optimized color gamut is dominated by QD materials.

  2. A Novel Buffer Layer of Alq3 in Organic Electroluminescent Devices

    Institute of Scientific and Technical Information of China (English)

    ZHANG Zhi-Feng; DENG Zhen-Bo; LIANG Chun-Jun; LIN Peng; ZHANG Meng-Xin; XU Deng-Hui

    2004-01-01

    @@ Inserting the Alq3 layer in the ITO/NPB interface as the buffer layer can improve the organic electroluminescent devices. The current density efficiency and power efficiency of the device with the Alq3 buffer layer rises to 6.5 cd/A and 1.21 m/W at the current density of 120 mA/cm2, respectively. The improvement is mostly attributed to the balance of the hole and the electron injections.

  3. Hybrid silicon nanocrystal-organic light-emitting devices for infrared electroluminescence.

    Science.gov (United States)

    Cheng, Kai-Yuan; Anthony, Rebecca; Kortshagen, Uwe R; Holmes, Russell J

    2010-04-14

    We demonstrate hybrid inorganic-organic light-emitting devices with peak electroluminescence (EL) at a wavelength of 868 nm using silicon nanocrystals (SiNCs). An external quantum efficiency of 0.6% is realized in the forward-emitted direction, with emission originating primarily from the SiNCs. Microscopic characterization indicates that complete coverage of the SiNCs on the conjugated polymer hole-transporting layer is required to observe efficient EL.

  4. Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence

    Science.gov (United States)

    Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K. L.; Sum, Tze Chien; Huang, Wei

    2017-01-01

    The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 1015 cm−3, defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence. PMID:28239146

  5. Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence.

    Science.gov (United States)

    Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K L; Sum, Tze Chien; Huang, Wei

    2017-02-27

    The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 10(15) cm(-3), defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence.

  6. Photo- and electroluminescence properties of lanthanide tungstate-doped porous anodic aluminum oxide

    Science.gov (United States)

    Staninski, Krzysztof; Piskuła, Zbigniew; Kaczmarek, Małgorzata

    2017-02-01

    A new cathode material for the potential use in light-emitting devices, based on porous anodic alumina (PAA), aluminum and ITO layers has been synthesized. Porous alumina samples with ordered pore arrays were prepared electrochemically from high purity Al sheet in H2SO4 and H3PO4. To be able to apply the matrix obtained in the electroluminescence cell, the thickness of the barrier layer of aluminum oxide was decreased by slow reduction of the anodization voltage to zero. The luminescence and electroluminescence (EL) properties of the Al2O3 matrix admixtured with Eu3+ and Tb3+ ions as well as europium and terbium tungstates, were determined. The particles of inorganic luminophore were synthesized on the walls of the matrix cylindrical nanopores in the two-step process of immersion in solutions of TbCl3 or EuCl3 and Na2WO4. The effect of the nanopores diameter and the thickness of the porous Al2O3 layer on the intensity and relative yield of electroluminescence was analyzed, the best results were obtained for 80-90 μm PAA layers with 140 nm nanopores.

  7. Realization of Ultraviolet Electroluminescence from ZnO Homo junction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping

    Institute of Scientific and Technical Information of China (English)

    SUN Jing-Chang; LIANG Hong-Wei; ZHAO Jian-Ze; BIAN Ji-Ming; FENG Qiu-Ju; WANG Jing-Wei; ZHAO Zi-Wen; DU Guo-Tong

    2008-01-01

    @@ ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition, A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor.The n-type ZnO layer is composed of un-doped ZnO film.The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3 V and a reverse breakdown voltage higher than 6 V.Distinct electroluminescence emissions centred at 395nm and 49Ohm are detected from this device at forvcard current higher than 20mA at room temperature.

  8. White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

    Science.gov (United States)

    Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

    2016-03-01

    In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

  9. Synthesis, Characterization, and Electroluminescence Properties of Poly(fluorenevinylene benzobisthiazoles)

    Energy Technology Data Exchange (ETDEWEB)

    Intemann, Jeremy J.; Mike, Jared F.; Cai, Min; Barnes, Charles A.; Xiao, Teng; Roggers, Robert A.; Shinar, Joseph; Shinar, Ruth; Jeffries-EL, Malika

    2012-11-26

    A series of vinylene-linked copolymers based on electron-deficient benzobisthiazole and electron-rich fluorene moieties were synthesized via Horner–Wadsworth–Emmons polymerization. Three different polymers P1, P2, and P3, were prepared bearing octyl, 3,7-dimethyloctyl, and 2-(2-ethoxy)ethoxyethyl side chains, respectively. The polymers all possessed moderate molecular weights, good solubility in aprotic organic solvents, and high fluorescence quantum efficiencies in dilute solutions. P2, which bore branched 3,7-dimethyloctyl side chains, exhibited better solubility than the other polymers, but also exhibited the lowest thermal decomposition temperature of all polymers. Overall, the impact of the side chains on the polymers optical properties in solution was negligible as all three polymers gave similar absorption and emission spectra in both solution and film. Guest-host light-emitting diodes using dilute blends of the polymers in a poly(N-vinylcarbazole) host gave blue-green emission with P2 exhibiting the highest luminous efficiency, 0.61 Cd/A at ~500 nm. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013

  10. Electroluminescence from nonpolar n-ZnO/p-AlGaN heterojunction light-emitting diode on r-sapphire

    Science.gov (United States)

    Chen, Jingwen; Zhang, Jun; Dai, Jiangnan; Wu, Feng; Wang, Shuai; Chen, Cheng; Long, Hanling; Liang, Renli; Zhao, Chong; Chen, Changqing; Tang, Zhiwu; Cheng, Hailing; He, Yunbin; Li, Mingkai

    2017-03-01

    Nonpolar a-plane n-ZnO/p-AlGaN heterojunction light-emitting diodes (LEDs) have been prepared on r-sapphire substrate using metal organic chemical vapor deposition and a pulsed laser deposition method. The dominant electroluminescence emission at 390 nm from the interband transition in n-ZnO layer under a forward bias was observed. Interestingly, electroluminescence with emission at 385 nm based on an avalanche mechanism was also achieved under reverse bias. The mechanisms of both the electroluminescence and I–V characteristics are discussed in detail by considering the avalanche effect. It is demonstrated that the crystalline quality of n-ZnO, not the p-AlGaN, is what affects the performance of the nonpolar ZnO based avalanche LED.

  11. Experimental observation of electroluminescence enhancement on green LEDs mediated by surface plasmons.

    Science.gov (United States)

    Lee, Kwang-Geol; Choi, Ki-Young; Kim, Jin-Ha; Song, Seok Ho

    2014-08-25

    We experimentally demonstrate the 1.5-fold enhancement of the electroluminescence (EL) of surface-plasmon (SP)-mediated green LEDs. On the p-clad surface of InGaN/GaN multi-quantum well LEDs, a 2-dimensional, second-order grating structure is textured and coated with an Ag electrode. With this setup, a larger EL enhancement factor is obtained at a higher injected current, which suggests that SP-LEDs can be a possible solution to efficiency droop, which is one of the main problems in developing high-power LEDs. Details regarding the implementation of our device are discussed.

  12. Blue and white light electroluminescence in a multilayer OLED using a new aluminium complex

    Indian Academy of Sciences (India)

    Pabitra K Nayak; Neeraj Agarwal; Farman Ali; Meghan P Patankar; K L Narasimhan; N Periasamy

    2010-11-01

    Synthesis, structure, optical absorption, emission and electroluminescence properties of a new blue emitting Al complex, namely, bis-(2-amino-8-hydroxyquinolinato), acetylacetonato Al(III) are reported. Multilayer OLED using the Al complex showed blue emission at 465 nm, maximum brightness of ∼ 425 cd/m2 and maximum current efficiency of 0.16 cd/A. Another multilayer OLED using the Al complex doped with phosphorescent Ir complex showed `white’ light emission, CIE coordinate (0.41, 0.35), maximum brightness of ∼ 970 cd/m2 and maximum current efficiency of 0.53 cd/A.

  13. Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate

    Science.gov (United States)

    Chang, Chiao; Li, Hui; Huang, Ssu-Hsuan; Lin, Li-Chien; Cheng, Hung-Hsiang

    2016-04-01

    The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13 A/cm2. We obtained no-phonon- and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni’s empirical expression with α = 4.884 × 10-4 eV/K and β = 130 K.

  14. Enhanced Electroluminescent Efficiency Based on Functionalized Europium Complexes in Polymer Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong; WANG Lei; LI Chun; ZENG Wen-Jin; SHI Hua-Hong; CAO Yong

    2007-01-01

    Efficient red polymer light-emitting diodes are fabricated with the single active layer from the blends of poly (Nvinylcarbazole) (PVK) in the presence of 30wt.% electron-transporting compound 2-(4-biphenylyl)-5-(p-tertbutylphenyl)-1,3,4-oxadiazole (PBD) and europium complexes. The polyphenylene functionalized europium complex shows an enhanced electroluminescent efficiency due to the large site-isolation effect. For the polyphenylene functionalized europium complex, the maximum external quantum efficiency of 1.90% and luminous efficiency of 2.01 cd A-1 are achieved with emission peak at 612nm. The maximum brightness is more than 300cd m-2.

  15. Electroluminescence in organic single-layer light-emitting diodes at high fields

    Institute of Scientific and Technical Information of China (English)

    杨盛谊; 徐征; 王振家; 侯延冰; 徐叙; 张希清

    2001-01-01

    By considering the interaction between Fowler-Nordheim tunneling injection theory and charge carriers transporting through the bulk, an electroluminescence model for organic single-layer diodes is presented. The expressions of the recombination current density, recombination efficiency and conductivity of the diodes are provided, which elucidate the controlling role of the electric field on mobility and recombination zone. The equilibrium of two opposite charge carriers injection and the central position of recombination zone are two important preconditions for reducing the leakage current. Space-charge-limited current occurs only over a certain high bias, meanwhile, the quantity of injection carriers increases over the transport capacity of the bulk.

  16. CHARACTERIZATION AND LUMINESCENCE PROPERTIES OF THE DYE-DOPED POLYMER LANGMUIR-BLODGETT FILMS

    Institute of Scientific and Technical Information of China (English)

    Hai-peng Zheng; Rui-feng Zhang; Jin-man Huang; Ying Wu; Yu-guang Ma; Tie-jin Li; Jia-cong Shen

    1999-01-01

    1,1,4,4-Tetraphenyl-1,3-butadiene (TPB) was successfully introduced into the polymer multilayer films by means of Langmuir-Blodgett (LB) technique. Results of UV-VIS spectra and X-ray diffraction showed that the uniform films had a layer structure similar to the superlattice of organic multiple quantum wells. The electroluminescence (EL) devices fabricated from the doped polymer LB films emitted blue light.Compared with the casting films, the photoluminescence (PL) and EL spectra showed that the exciton energy shifts to higher and the half-width of the emission peak becomes narrower due to exciton confinement effect.

  17. Study on photoluminescence from tris-(8-hydroxyquinoline)aluminum thin films and influence of light

    Science.gov (United States)

    Thangaraju, K.; Kumar, J.; Amaladass, P.; Mohanakrishnan, A. K.; Narayanan, V.

    2006-08-01

    Tris-(8-hydroxyquinoline)aluminum (Alq3), which is the most widely used material in organic electroluminescent devices, has been synthesized. Alq3 thin films have been deposited on glass and silicon substrates. The influence of light exposure on the optical properties of Alq3 thin films has been studied. It is confirmed that the photoluminescence (PL) of Alq3 thin film originates from its two geometrical isomers, namely, facial and meridional, which result from PL decay analysis (biexponential fit). It is also confirmed that the PL from both the isomers decreases for increasing light exposure time leading to the creation of luminescent quencher in Alq3 thin film.

  18. A new series of short axially symmetrically and asymmetrically 1,3,6,8-tetrasubstituted pyrenes with two types of substituents: Syntheses, structures, photophysical properties and electroluminescence

    Science.gov (United States)

    Zhang, Ran; Zhang, Tengfei; Xu, Lu; Han, Fangfang; Zhao, Yun; Ni, Zhonghai

    2017-01-01

    A new series of short axially symmetrically (4a and 4b) and asymmetrically (4c and 4d) 1,3,6,8-tetrasubstituted pyrene-based compounds with two phenyl moieties and two diphenylamine units on the pyrene core were designed and synthesized based on stepwise synthetic strategy. These compounds were structurally characterized and their photoelectric properties were investigated by spectroscopy, electrochemical and theoretical studies. The structures of 4a and 4b were determined by single-crystal X-ray diffraction analysis, indicating that the compounds are twisted by the peripheral substituents and the intermolecular π-π interactions have been efficiently interrupted. The four compounds exhibit high absolute fluorescence quantum yields (VF) in dichloromethane (83.31-88.45%) and moderate VFs in film states (20.78-38.68%). In addition, compounds 4a and 4b display relatively higher absolute VFs than those of 4c and 4d in film states. All the compounds exhibit high thermal stability with decomposition temperatures above 358 °C and the values of 4c and 4d are higher than 4a and 4b. Compounds 4a and 4b can form morphologically stable amorphous thin films with Tg values of 146 °C and 149 °C, respectively. However, there are no obvious Tg observed in compounds 4c and 4d. Electroluminescent devices using 4a and 4b as doped emission layer show promising device performance with low turn-on voltage (3.0 V), maximum brightness around 15100 cd/m2 and 16100 cd/m2, maximum luminance efficiency of 12.4 cd/A and 13.6 cd/A and maximum external quantum efficiency of 5.34% and 5.63%, respectively.

  19. Wavelength-Tunable Electroluminescent Light Sources from Individual Ga-Doped ZnO Microwires.

    Science.gov (United States)

    Jiang, Mingming; He, Gaohang; Chen, Hongyu; Zhang, Zhenzhong; Zheng, Lingxia; Shan, Chongxin; Shen, Dezhen; Fang, Xiaosheng

    2017-03-07

    Electrically driven wavelength-tunable light emission from biased individual Ga-doped ZnO microwires (ZnO:Ga MWs) is demonstrated. Single crystalline ZnO:Ga MWs with different Ga-doping concentrations have been synthesized using a one-step chemical vapor deposition method. Strong electrically driven light emission from individual ZnO:Ga MW based devices is realized with tunable colors, and the emission region is localized toward the center of the wires. Increasing Ga-doping concentration in the MWs can lead to the redshift of electroluminescent emissions in the visible range. Interestingly, owing to the lack of rectification characteristics, relevant electrical measurement results show that the alternating current-driven light emission functions excellently on the ZnO:Ga MWs. Consequently, individual ZnO:Ga MWs, which can be analogous to incandescent sources, offer unique possibilities for future electroluminescence light sources. This typical multicolor emitter can be used to rival and complement other conventional semiconductor devices in displays and lighting.

  20. Proportional electroluminescence in two-phase argon and its relevance to rare-event experiments

    CERN Document Server

    Bondar, A; Dolgov, A; Nosov, V; Shekhtman, L; Shemyakina, E; Sokolov, A

    2015-01-01

    Proportional electroluminescence (EL) in gaseous Ar has for the first time been systematically studied in the two-phase mode, at 87 K and 1.00 atm. Liquid Ar had a minor (56 ppm) admixture of N2, which allowed to understand, inter alia, the effect of N2 doping on the EL mechanism in rare-event experiments using two-phase Ar detectors. The measurements were performed in a two-phase Cryogenic Avalanche Detector (CRAD) with EL gap located directly above the liquid-gas interface. The EL gap was optically read out in the Vacuum Ultraviolet (VUV), near 128 nm (Ar excimer emission), and in the near Ultraviolet (UV), at 300-450 nm (N2 Second Positive System emission), via cryogenic PMTs and a Geiger-mode APD (GAPD). Proportional electroluminescence was measured to have an amplification parameter of 109+-10 photons per drifting electron per kV overall in the VUV and UV, of which 51+-6% were emitted in the UV. The measured EL threshold, at an electric field of 3.7+-0.2 kV/cm, was in accordance with that predicted by th...

  1. Efficient Blue Electroluminescence Using Quantum-Confined Two-Dimensional Perovskites.

    Science.gov (United States)

    Kumar, Sudhir; Jagielski, Jakub; Yakunin, Sergii; Rice, Peter; Chiu, Yu-Cheng; Wang, Mingchao; Nedelcu, Georgian; Kim, Yeongin; Lin, Shangchao; Santos, Elton J G; Kovalenko, Maksym V; Shih, Chih-Jen

    2016-10-03

    Solution-processed hybrid organic-inorganic lead halide perovskites are emerging as one of the most promising candidates for low-cost light-emitting diodes (LEDs). However, due to a small exciton binding energy, it is not yet possible to achieve an efficient electroluminescence within the blue wavelength region at room temperature, as is necessary for full-spectrum light sources. Here, we demonstrate efficient blue LEDs based on the colloidal, quantum-confined 2D perovskites, with precisely controlled stacking down to one-unit-cell thickness (n = 1). A variety of low-k organic host compounds are used to disperse the 2D perovskites, effectively creating a matrix of the dielectric quantum wells, which significantly boosts the exciton binding energy by the dielectric confinement effect. Through the Förster resonance energy transfer, the excitons down-convert and recombine radiatively in the 2D perovskites. We report room-temperature pure green (n = 7-10), sky blue (n = 5), pure blue (n = 3), and deep blue (n = 1) electroluminescence, with record-high external quantum efficiencies in the green-to-blue wavelength region.

  2. A green emitting phosphorescent copper(I) complex with tetrazole derived ligand for electroluminescence application.

    Science.gov (United States)

    Tong, Senmiao; Yuan, Donglin; Yi, Lita

    2014-09-15

    In this paper, a tetrazole derived diamine ligand of 2-(1H-tetrazol-5-yl)pyridine (TP) owing electron-donors and short conjugation chain was synthesized to increase the band gap of its corresponding phosphorescent Cu(I) complex. This Cu(I) complex was characterized in detail, including its single crystal structure, singlet electronic transitions, photophysical parameters, thermal stability and electrochemical property. Upon on photoexcitation, this Cu(I) complex emitted green emission peaking at 497 nm with biexponential decay pattern of τ1=5.5414 μs (A1=0.137) and τ2=1.0679 μs (A2=0.11503). Cyclic voltammerty experiment suggested that this Cu(I) complex owned HOMO and LUMO energy levels of -5.79 eV and -2.39 eV. The thermal decomposition temperature was 170°C as indicated by thermogravimetric analysis. The optimal electroluminescence device constructed by solution processed coating procedure showed green electroluminescence peaking at 525 nm, with maximum luminance of 2860 cd/m2 and maximum current efficiency of 5.9 cd/A.

  3. A Successive Scans Method of Adjusting Scan-Time for Injection Electroluminescent Display Panels

    Institute of Scientific and Technical Information of China (English)

    OU Peng; YANG Gang; JIANG Quan; WANG Jun; HU Jian-Hua; WU Qi-Peng; LUO Kai-Jun

    2011-01-01

    @@ Aiming at the problem of luminance uniformity for injection electroluminescent display panels, we present a new scan method for display panels according to successive scans theory.First, on the basis of the number of pixels requiring light emitting in one frame period, we adjust the scan time for each row.Secondly, for ensuring image transmission synchronization, the frame period must to be a constant.We adopt a 64 × 32 LED display panel as an example to expound the new scan method and we obtain the good result that the reduce amplitude of luminance non-uniformity is 31.34% and the increase amplitude of the average luminance value is 7.8258%.%Aiming at the problem of luminance uniformity for injection electroluminescent display panels,we present a new scan method for display panets according to successive scans theory.First,on the basis of the number of pixels requiring light emitting in one frame period,we adjust the scan time for each row.Secondly,for ensuring image transmission synchronization,the frame period must to be a constant.We adopt a 64×32 LED display panel as an example to expound the new scan method and we odtain the good result that the reduce amplitude of luminance non-uniformity is 31.34% and the increase amplitude of the average luminance value is 7.8258%.

  4. Electroluminescence of SrS, BaS and SrSe Phosphors Activated by Cu and Er

    Science.gov (United States)

    Kulkarni, V. W.; Patwardhan, S. S.; Ghanbahadur, R. Y.

    1982-03-01

    Results of the investigations of the spectral characteristics of electroluminescence of SrS:Cu, Er, BaS:Cu, Er and SrSe:Cu, Er phosphors are presented. Some new features of the voltage and frequency dependence of EL-emission are reported.

  5. 2-(2-Hydroxyphenyl)benzimidazole-based four-coordinate boron-containing materials with highly efficient deep-blue photoluminescence and electroluminescence.

    Science.gov (United States)

    Zhang, Zhenyu; Zhang, Houyu; Jiao, Chuanjun; Ye, Kaiqi; Zhang, Hongyu; Zhang, Jingying; Wang, Yue

    2015-03-16

    Two novel four-coordinate boron-containing emitters 1 and 2 with deep-blue emissions were synthesized by refluxing a 2-(2-hydroxyphenyl)benzimidazole ligand with triphenylborane or bromodibenzoborole. The boron chelation produced a new π-conjugated skeleton, which rendered the synthesized boron materials with intense fluorescence, good thermal stability, and high carrier mobility. Both compounds displayed deep-blue emissions in solutions with very high fluorescence quantum yields (over 0.70). More importantly, the samples showed identical fluorescence in the solution and solid states, and the efficiency was maintained at a high level (approximately 0.50) because of the bulky substituents between the boron atom and the benzimidazole unit, which can effectively separate the flat luminescent units. In addition, neat thin films composed of 1 or 2 exhibited high electron and hole mobility in the same order of magnitude 10(-4), as determined by time-of-flight. The fabricated electroluminescent devices that employed 1 or 2 as emitting materials showed high-performance deep-blue emissions with Commission Internationale de L'Eclairage (CIE) coordinates of (X = 0.15, Y = 0.09) and (X = 0.16, Y = 0.08), respectively. Thus, the synthesized boron-containing materials are ideal candidates for fabricating high-performance deep-blue organic light-emitting diodes.

  6. Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

    Institute of Scientific and Technical Information of China (English)

    Xiao Wenbo; He Xingdao; Gao Yiqing; Zhang Zhimin; Liu Jiangtao

    2012-01-01

    The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions.An electroluminescence viewgraph shows the clear device structures,and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current.The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells.The good fit between the measured and calculated data proves the above conclusions.This work is of guiding significance for current solar cell testing and research.

  7. Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si

    Science.gov (United States)

    He, Chao; Liu, Zhi; Cheng, Bu-Wen

    2016-12-01

    We report a lateral Ge-on-Si ridge waveguide light emitting diode (LED) grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Direct-bandgap electroluminescence (EL) of Ge waveguide under continuous current is observed at room temperature. The heat-enhancing luminescence and thermal radiation-induced superlinear increase of edge output optical power are found. The spontaneous emission and thermal radiation based on the generalized Planck radiation law are calculated and fit very well to the experimental results. The Ge waveguides with different lengths are studied and the shorter one shows stronger EL intensity. Project supported by the National Basic Research Program of China (Grant No. 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176013 and 61036003), and the Science Fund from Beijing Science and Technology Commission, China (Grant No. Z151100003315019).

  8. Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

    DEFF Research Database (Denmark)

    Mesta, Murat; Carvelli, Marco; de Vries, Rein J;

    2013-01-01

    we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...... are shown to agree well with experiment. The experimental emission profile was obtained with nanometre resolution from the measured angle- and polarization-dependent emission spectra. The simulations elucidate the crucial role of exciton transfer from green to red and the efficiency loss due to excitons...

  9. A Noble Gas Detector with Electroluminescence Readout based on an Array of APDs

    CERN Document Server

    Bourguille, B; Gil-Botella, I; Lux, T; Palomares, C; Sanchez, F; Santorelli, R

    2015-01-01

    We present the results of the operation of an array of avalanche photodiodes (APDs) for the readout of an electroluminescence detector. The detector contains 24 APDs with a pitch of 15 mm between them allowing energy and position measurements simultaneously. Measurements were performed in xenon (3.8 bar) and argon (4.8 bar) showing a good energy resolution of 5.3% FWHM at 60 keV in xenon and 9.4% in argon respectively. In X-ray energies of 13 could be clearly separated from the pedestals indicating that this kind of technology might be also interesting for dark matter detectors. Following Monte Carlo studies the performance could be improved significantly by reducing the pitch between the sensors.

  10. Democratizing an electroluminescence imaging apparatus and analytics project for widespread data acquisition in photovoltaic materials.

    Science.gov (United States)

    Fada, Justin S; Wheeler, Nicholas R; Zabiyaka, Davis; Goel, Nikhil; Peshek, Timothy J; French, Roger H

    2016-08-01

    We present a description of an electroluminescence (EL) apparatus, easily sourced from commercially available components, with a quantitative image processing platform that demonstrates feasibility for the widespread utility of EL imaging as a characterization tool. We validated our system using a Gage R&R analysis to find a variance contribution by the measurement system of 80.56%, which is typically unacceptable, but through quantitative image processing and development of correction factors a variance contribution by the measurement system of 2.41% was obtained. We further validated the system by quantifying the signal-to-noise ratio (SNR) and found values consistent with other systems published in the literature, at SNR values of 10-100, albeit at exposure times of greater than 1 s compared to 10 ms for other systems. This SNR value range is acceptable for image feature recognition, providing the opportunity for widespread data acquisition and large scale data analytics of photovoltaics.

  11. Two-phase Cryogenic Avalanche Detector with electroluminescence gap operated in argon doped with nitrogen

    CERN Document Server

    Bondar, A; Dolgov, A; Nosov, V; Shekhtman, L; Shemyakina, E; Sokolov, A

    2016-01-01

    A two-phase Cryogenic Avalanche Detector (CRAD) with electroluminescence (EL) gap, operated in argon doped with a minor (49$\\pm$7 ppm) admixture of nitrogen, has been studied. The EL gap was optically read out using cryogenic PMTs located on the perimeter of the gap. We present the results of the measurements of the N$_2$ content, detector sensitivity to X-ray-induced signals, EL gap yield and electron lifetime in the liquid. The detector sensitivity, at a drift field in liquid Ar of 0.6 kV/cm, was measured to be 9 and 16 photoelectrons recorded at the PMTs per keV of deposited energy at 23 and 88 keV respectively. Such two-phase detectors, with enhanced sensitivity to the S2 (ionization-induced) signal, are relevant in the field of argon detectors for dark matter search and low energy neutrino detection.

  12. Investigation of electroluminescence properties of CdTe@CdS core-shell nanocrystals (NCs)

    Indian Academy of Sciences (India)

    M Molaei; S Pourjafari

    2014-02-01

    In this work, CdTe@CdS NCs were synthesized using a thermochemical approach and synthesized NCs were used as an emissive layer, a light emitting device, with ITO/MoO3/PVK/CdTe@CdS(core-shell)/Mg:Ag structure. Structural and optical properties of synthesized NCs were investigated by means of XRD, UV–Vis and photoluminescence (PL) analyses. Fabricated device was characterized by electroluminescence spectra. XRD analysis demonstrated cubic phase NCs. Photoluminescence spectra showed a narrow band emission with a peak centred at about 600 nm. Fabricated device showed an emission at 600 nm, which is related to CdTe@CdS NCs. Turn on voltage of fabricated device is about 8 V and brightness is 53.7 Cd/m2 at a working voltage of about 14.57 V.

  13. Development and Characterization of a Multi-APD Xenon Electroluminescence TPC

    CERN Document Server

    Lux, T; Ballester, O; Bordoni, S; Gil-Botella, I; Hamer, N; Illa, J; Mañas, G Jover; Martin-Mari, C; Palomares, C; Rico, J; Sanchez, F; Santorelli, R; Verdugo, A

    2014-01-01

    The performance of an electroluminescence (EL) time projection chamber (TPC) with a multi avalanche photodiode (APD) readout was studied in pure xenon at 3.8 bar. Intercalibration and reconstruction methods were developed and applied to the data yielding energy resolutions as good as 5.3$+-$0.1 % FWHM for 59.5 keV gammas from 241-Am. The result was verified with a Monte Carlo (MC) based on Geant4 and Penelope predicting 5.2 % FWHM for the used setup. Point resolutions of about 0.5 mm were obtained by a pitch of 15 mm between the APDs. The results show that a multi-APD readout is a competitive technology for EL detectors filled with pure xenon with possible applications as Compton Cameras.

  14. An Electroluminescence Delay Time Model of Bilayer Organic Light-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    LI Hong-Jian; ZHU Ru-Hui; LI Xue-Yong; YANG Bing-Chu

    2007-01-01

    @@ Based on the mechanism of injection, transport and recombination of the charge carriers, we develop a model to calculate the delay time of electroluminescence (EL) from bilayer organic light emitting diodes. The effect of injection, transport and recombination processes on the EL delay time is discussed, and the relationship between the internal interface barrier and the recombination time is revealed. The results show that the EL delay time is dominated by the recombination process at lower applied voltage and by the transport process at higher applied voltage. When the internal interface barrier varies from 0.15 eV to 0.3 eV, the recombination delay time increases rapidly, while the internal interface barrier exceeds about 0.3eV, the dependence of the recombination delay time on applied voltage is almost undiversified, which may serve as a guideline for designing of a high-speed EL response device.

  15. Electroluminescence from Ge1-ySny diodes with degenerate pn junctions

    Science.gov (United States)

    Gallagher, J. D.; Senaratne, C. L.; Wallace, P. M.; Menéndez, J.; Kouvetakis, J.

    2015-09-01

    The light emission properties of GeSn pn diodes were investigated as a function of alloy composition and doping levels. Very sharp interfaces between contiguous ultra-highly doped p- and n-layers were obtained using in situ doping with B2H6 and P(SiH3)3 in a chemical vapor deposition environment, yielding nearly ideal model systems for systematic studies. Changes in the doping levels and layer Sn concentrations are shown to greatly affect the electroluminescence spectra. This sensitivity should make it possible to optimize the emission efficiency for these structures in the interesting quasi-direct regime, for which direct gap luminescence is observed due to the proximity of the conduction band quasi-Fermi level to the minimum of the conduction band at the center of the Brillouin zone. Such structures represent the basic building block of Ge-based electrically pumped lasers.

  16. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

    2013-06-24

    Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

  17. Novel Alternating Current Electroluminescent Devices with an Asymmetric Structure Based on a Polymer Heterojunction

    Institute of Scientific and Technical Information of China (English)

    谭海曙; 姚建铨; 王昕; 王鹏; 谢洪泉

    2002-01-01

    Novel alternating current electroluminescent devices with an asymmetric structure are successfully fabricated by using a hole-type polymer, poly(2,5-bis (dodecyloxy)-phenylenevinylene) (PDDOPV), and an electron-type polymer, poly(phenyl quinoxaline) (PPQ). The performance of the polymer devices with heteto junctions under ac operation is insensitive to the thickness of the two polymer layers, compared to that under dc operation. This new advantage means easy and cheap production facility on a large scale in the near future. Different emission spectra are obtained when our ac devices are operated in an ac mode, forward or reverse bias. The emission spectrum at reverse bias includes two parts: one from PDDOPV and the other from PPQ.

  18. Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

    Science.gov (United States)

    Tani, Kazuki; Saito, Shin-ichi; Oda, Katsuya; Miura, Makoto; Wakayama, Yuki; Okumura, Tadashi; Mine, Toshiyuki; Ido, Tatemi

    2017-03-01

    Germanium (Ge) (111) fins of 320 nm in height were successfully fabricated using a combination of flattening sidewalls of a silicon (Si) fin structure by anisotropic wet etching with tetramethylammonium hydroxide, formation of thin Ge fins by selective Si oxidation in SiGe layers, and enlargement of Ge fins by Ge homogeneous epitaxial growth. The excellent electrical characteristics of Ge(111) fin light-emitting diodes, such as an ideality factor of 1.1 and low dark current density of 7.1 × 10‑5 A cm‑2 at reverse bias of ‑2 V, indicate their good crystalline quality. A tensile strain of 0.2% in the Ge fins, which originated from the mismatch of the thermal expansion coefficients between Ge and the covering SiO2 layers, was expected from the room-temperature photoluminescence spectra, and room-temperature electroluminescence corresponding to the direct band-gap transition was observed from the Ge fins.

  19. Probe beam-free detection of terahertz wave by electroluminescence induced by intense THz pulse

    Science.gov (United States)

    Shin, J.; Jin, Z.; Nosaka, Y.; Nakazawa, T.; Kodama, R.

    2016-03-01

    Recently, a table-top fs laser system can generate MW terahertz (THz) pulse with its electric field higher than 100 kV/cm can be generated by several schemes. Such a strong THz field can directly drive electrons inside various materials. Here, we demonstrated a direct THz electric field detection method by measuring the electroluminescence induced by intense THz pulse inside commonly available light emitting diode. An intense THz wave obtained by the two-color laser scheme was focused onto LED along with an external DC bias to induce luminescence which we found proportional to the amplitude of the incident THz field. The scheme can be useful to realize a low-cost, probe-free THz detection and imaging system.

  20. Automatic Detection and Evaluation of Solar Cell Micro-Cracks in Electroluminescence Images Using Matched Filters

    Energy Technology Data Exchange (ETDEWEB)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2016-11-21

    A method for detecting micro-cracks in solar cells using two dimensional matched filters was developed, derived from the electroluminescence intensity profile of typical micro-cracks. We describe the image processing steps to obtain a binary map with the location of the micro-cracks. Finally, we show how to automatically estimate the total length of each micro-crack from these maps, and propose a method to identify severe types of micro-cracks, such as parallel, dendritic, and cracks with multiple orientations. With an optimized threshold parameter, the technique detects over 90 % of cracks larger than 3 cm in length. The method shows great potential for quantifying micro-crack damage after manufacturing or module transportation for the determination of a module quality criterion for cell cracking in photovoltaic modules.

  1. Democratizing an electroluminescence imaging apparatus and analytics project for widespread data acquisition in photovoltaic materials

    Science.gov (United States)

    Fada, Justin S.; Wheeler, Nicholas R.; Zabiyaka, Davis; Goel, Nikhil; Peshek, Timothy J.; French, Roger H.

    2016-08-01

    We present a description of an electroluminescence (EL) apparatus, easily sourced from commercially available components, with a quantitative image processing platform that demonstrates feasibility for the widespread utility of EL imaging as a characterization tool. We validated our system using a Gage R&R analysis to find a variance contribution by the measurement system of 80.56%, which is typically unacceptable, but through quantitative image processing and development of correction factors a variance contribution by the measurement system of 2.41% was obtained. We further validated the system by quantifying the signal-to-noise ratio (SNR) and found values consistent with other systems published in the literature, at SNR values of 10-100, albeit at exposure times of greater than 1 s compared to 10 ms for other systems. This SNR value range is acceptable for image feature recognition, providing the opportunity for widespread data acquisition and large scale data analytics of photovoltaics.

  2. Wannier-Stark localization and terahertz electroluminescence of natural SiC superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Sankin, V. I.; Andrianov, A. V.; Petrov, A. G.; Zakhar' in, A. O. [A.F. Ioffe Physical Technical Institute, 194021 St. Petersburg (Russian Federation)

    2013-12-04

    We report on efficient terahertz electroluminescence in the region of 1.5-2 THz from high electric field biased 6H-SiC n{sup +}−n{sup −}−n{sup +} structures with a natural superlattice at 7 K. The properties of the terahertz emission allow it to be attributed to spontaneous radiation resulting from electron Bloch oscillations in SiC natural superlattice. The use of the unique object, namely, natural superlattice of SiC allowed us to demonstrate a whole series of remarkable effects of Wannier-Stark localization and to get the intensive terahertz emission under steady-state electrical excitation of Bloch oscillations.

  3. Emission of white light from 2-(2'-hydroxyphenyl) benzothiazole in polymer electroluminescent devices

    Energy Technology Data Exchange (ETDEWEB)

    Chang, S.M. [Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, Taiwan (China)]. E-mail: f10914@ntut.edu.tw; Tzeng, Y.J. [Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, Taiwan (China); Wu, S.Y. [Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, Taiwan (China); Li, K.Y. [Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, Taiwan (China); Hsueh, K.L. [Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei, Taiwan (China)

    2005-04-22

    Single-layer polymer devices that emit bright light from dye dispersed in the polymer matrix are fabricated. The active layer consists only of one polymer layer sandwiched between two electrodes-indium tin oxide and Mg:Ag. 2-(2-hydroxyphenyl) benzothiazole (HBT), a UV absorbent, is synthesized and exhibits bright blue-green fluorescence. Bright white emission is observed when the concentration of the dye in poly(N-vinylcarbazole) (PVK) polymer matrix is adjusted appropriately. The single-layered polymer blended electroluminescent (EL) device (ITO/polymer/Mg/Ag) has a relatively low driving voltage of 8 V. The EL spectrum includes three emission peaks at 420, 530 and 600 nm, representing deep blue, green and red light, respectively. The chromaticity coordinates, as specified by the Commission Internationale de l'Eclairage are (0.34, 0.36)

  4. White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    Sadaf JR

    2010-01-01

    Full Text Available Abstract We report the fabrication of heterostructure white light–emitting diode (LED comprised of n-ZnO nanotubes (NTs aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour.

  5. Photo and electroluminescence of ZnSe: Sn and ZnSe:(Sn, Pr) phosphors

    Science.gov (United States)

    Mishra, A. K.; Mishra, S. K.; Pandey, S. P.; Lakshmi Mishra, Kshama

    2016-09-01

    We have prepared ZnSe (luminescent grade) phosphor doped with Sn and (Sn,Pr) with varying concentration in an inert atmosphere in a silica tubular furnace at temperature of (780 ± 20) °C for 1 hr to obtain ZnSe:Sn and ZnSe: (Sn,Pr) phosphors. The photo luminescence (PL) and electroluminescence (EL) spectra of these phosphors have been studied at room temperature and results were discussed in the light of existing models. Dependence of EL emission on the voltage frequency has also been carried out. It is found that the plot between the integrated light intensity versus 1/√Vrms is a straight line suggesting the existence of Mott-Schottky type barrier on the metal semiconductor interface.

  6. Light emitting devices based on Si nanoclusters: the integration with a photonic crystal and electroluminescence properties

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphous nanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical and electrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The EL properties of these devices have been studied as a function of current and of temperature. Moreover, to improve the extraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunely fabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extraction efficiency in such devices increases by a factor of 4 at a resonance wavelength.

  7. Two-phase Cryogenic Avalanche Detector with electroluminescence gap operated in argon doped with nitrogen

    Science.gov (United States)

    Bondar, A.; Buzulutskov, A.; Dolgov, A.; Nosov, V.; Shekhtman, L.; Shemyakina, E.; Sokolov, A.

    2017-02-01

    A two-phase Cryogenic Avalanche Detector (CRAD) with electroluminescence (EL) gap, operated in argon doped with a minor (49±7 ppm) admixture of nitrogen, has been studied. The EL gap was optically read out using cryogenic PMTs located on the perimeter of the gap. We present the results of the measurements of the N2 content, detector sensitivity to X-ray-induced signals, EL gap yield and electron lifetime in the liquid. The detector sensitivity, at a drift field in liquid Ar of 0.6 kV/cm, was measured to be 9 and 16 photoelectrons recorded at the PMTs per keV of deposited energy at 23 and 88 keV respectively. Such two-phase detectors, with enhanced sensitivity to the S2 (ionization-induced) signal, are relevant in the field of argon detectors for dark matter search and low energy neutrino detection.

  8. Nanoscale electroluminescence from n-type GaAs(110) in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X L; Fujita, D; Niori, N; Keisuke, S; Onishi, K [Advanced Nanocharacterization Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2007-05-16

    Nanoscale electroluminescence (EL) was induced from n-type GaAs(110) in tunnel junctions using an indium tin oxide (ITO)-coated optical fibre probe at both polarities, room temperature (RT), and 80 K. The quantum efficiency of photon emission at negative bias is much higher than at positive bias at both RT and 80 K. A high quantum efficiency of about {approx}10{sup -4}(photons/electron) was achieved at 80 K. The well-defined optical spectra exhibit two-peak features at 1.49 and 1.39 eV which are generated by the radiative recombination of hole-electron pairs over the direct band gap and surface states, respectively.

  9. Structure–property relationships of electroluminescent polythiophenes: role of nitrogen-based heterocycles as side chains

    Indian Academy of Sciences (India)

    S Radhakrishnan; S J Ananthakrishnan; N Somanathan

    2011-07-01

    A series of conjugated polythiophenes containing nitrogen-containing heterocycles as side chain, with differing substituent nature and linkage have been studied using quantum-chemical calculations. The optical properties of synthesized polymers were compared with that of model compounds with intricate structural variations. The theoretically predicted optical characteristics are correlated with the experimentally determined parameters. Experimentally determined band gap and absorption maxima found to follow the predicted trends. Single emissive layer polymeric light emitting diodes are fabricated and the structural influence on photo- and electro-emission was studied in detail. The study shows that the nature of side chain substituent such as number/position of nitrogen atoms and mode of linking of side chain plays a crucial role in deciding the geometry which in turn controls the voltage response of the electroluminescence.

  10. Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ferrara, Manuela

    2009-11-24

    The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

  11. Thin Film Encapsulation of Light-Emitting Diodes with Photopolymerized Polyacrylate and Silver Films

    Institute of Scientific and Technical Information of China (English)

    WANG Li-Duo; WU Zhao-Xin; LI Yang; QIU Yong

    2005-01-01

    @@ A thin film encapsulation of organic light-emitting diodes (OLEDs) is investigated with a multi-layer stack of polyacrylate-Ag-polyacrylate-Ag-polyacrylate-Ag-polyacrylate (PAPAPAP). It is shown that the fabrication of polyacrylate films by a wet process does not affect the electroluminescent (EL) characteristics of the devices and polyacrylate films together with the silver layers can perform to minimize oxygen and water diffusion into the organic light-emitting device. The structure of polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20μm)-Ag(200nm)-polyacrylate(20μm) is demonstrated to enhance dramatically the lifetime of OLEDs.

  12. AC Electroluminescent Processes in Pr3+-Activated (Ba0.4Ca0.6TiO3 Diphase Polycrystals

    Directory of Open Access Journals (Sweden)

    Nan Gao

    2017-05-01

    Full Text Available We investigated the properties of alternating current (AC-driven electroluminescence from (Ba0.4Ca0.6TiO3:Pr3+ diphase polycrystal-based device. The results of crystal phases and micrographs, and the symmetrical dual emissions in one AC cycle, indicate the spontaneous formation of a dielectric/phosphor/dielectric sandwich microstructure in (Ba0.4Ca0.6TiO3:Pr3+. The electroluminescent device emits a red light of 617 nm, which is attributed to the 1D2-3H4 transition of Pr3+ in the phosphor phase. At a fixed AC frequency, the intensity of electroluminescence exhibits a steep enhancement when applying an increased driving electric field that is beyond a threshold. In a fixed driving electric field, the intensity of electroluminescence shows a rapid rise at low frequencies, but reaches saturation at high frequencies. Based on a double-injection model, we discussed systematically the electroluminescent processes in a whole cycle of AC electric field, which matched well with the experimental data. Our investigation is expected to expand our understanding of such a diphase electroluminescent device, thereby promoting their applications in lighting and displays.

  13. Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

    Science.gov (United States)

    Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

    2015-11-01

    In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

  14. Luminescence properties of composites made of a europium(III) complex and electroluminescent polymers with different energy gaps

    Energy Technology Data Exchange (ETDEWEB)

    Morgado, Jorge [Instituto de Telecomunicacoes, Av. Rovisco Pais, P-1049-001 Lisbon (Portugal); Charas, Ana [Instituto de Telecomunicacoes, Av. Rovisco Pais, P-1049-001 Lisbon (Portugal); Fernandes, Jose A [Departamento de Quimica and CICECO, Universidade de Aveiro, 3810-193 Aveiro (Portugal); Goncalves, Isabel S [Departamento de Quimica and CICECO, Universidade de Aveiro, 3810-193 Aveiro (Portugal); Carlos, Luis D [Departamento de Fisica and CICECO, Universidade de Aveiro, 3810-193 Aveiro (Portugal); Alcacer, Luis [Instituto de Telecomunicacoes, Av. Rovisco Pais, P-1049-001 Lisbon (Portugal)

    2006-08-21

    We present the optoelectronic properties of composites made of a europium(III) complex, Eu(NTA){sub 3} phen (where NTA=1-(2-naphthoyl)-3,3,3-trifluoroacetonate; phen=1,10-phenantroline), dispersed in three electroluminescent polymers, namely, poly(N-vinylcarbazole), poly(9,9-dioctylfluorene) and poly(9,9-dioctylfluorene-alt-benzothiadiazole). We find that the photo- and electroluminescence (EL) properties of these composites are well rationalized in terms of the relative position of the frontier levels of the host polymers and of the europium complex. We find also that charge recombination at the europium complex sites plays a key role on the EL properties of the composites.

  15. Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

    Science.gov (United States)

    Dartsch, Heiko; Tessarek, Christian; Aschenbrenner, Timo; Figge, Stephan; Kruse, Carsten; Schowalter, Marco; Rosenauer, Andreas; Hommel, Detlef

    2011-04-01

    We present for the first time electroluminescence from InGaN quantum dots inside a monolithic nitride based cavity. The structure consists of a 40-fold bottom GaN/Al 0.82In 0.18N distributed Bragg reflector (DBR), a single InGaN quantum dot layer inside a 5λ n-type (bottom) and p-type (top) doped GaN cavity and a 10-fold GaN/Al 0.82In 0.18N top DBR. Structural properties have been investigated by scanning transmission electron microscopy. Optical reflectivity measurements are in good agreement with calculations which predict a peak reflectivity of 92% and a quality factor of 220. Electroluminescence shows a pronounced emission at the spectral position of the cavity mode near 500 nm.

  16. The effect of absorption and coherent interference in the photoluminescence and electroluminescence spectra of SRO/SRN MIS capacitors.

    Science.gov (United States)

    Juvert, Joan; González-Fernández, Alfredo Abelardo; Llobera, Andreu; Domínguez, Carlos

    2013-04-22

    In this paper we present a technique that can be used to study the effect of absorption and coherent interference in the luminescence of multilayer structures. We apply the technique to the measured photoluminescence and electroluminescence spectra of MIS capacitors where the insulator is composed of a silicon rich oxide (SRO)/silicon rich nitride (SRN) bilayer structure. We remove the effect of the multilayer stack on the measured photoluminescence spectrum of the samples without the metal contact to find the intrinsic spectrum. Then we apply the effect of the MIS structure on the intrinsic spectrum in order to calculate the electroluminescence spectrum. Good agreement with the experimentally measured EL spectrum is found. We discuss which parameters affect the spectra most significantly.

  17. Report of the results of the fiscal 1997 regional consortium R and D project. Regional consortium field/ R and D on the technology to create new organic electroluminescence devices (first fiscal year); 1997 nendo chiiki consortium kenkyu kaihatsu jigyo. Chiiki consortium bun`ya / shin`yuki electroluminescence device no sosei gijutsu ni kansuru kenkyu kaihatsu (daiichi nendo) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    The paper develops the R and D having as core creative technical seeds on the design principle of organic electroluminescence (EL) devices, aims at producing as products a polychrome display and a new energy saving type light source, develops new high efficient luminescent materials which support the production of products with high liability, and develops protective coats universally applicable to optical and electronic devices and sealing technology. In fiscal 1997, the following are commenced: 1) development of luminescent devices, 2) development of new luminescent agents, and 3) development of the mounting technology. In 1), the following are conducted: R and D for improvement of durability of EL devices, development of the process technology for polychroism, multi-coloring, and development of the large picture thin film formation technology. For the development of energy saving type high efficiency light source devices, a method is established for producing organic layers by a new wet coating method. In 3), the R and D are carried out of a method to form inorganic protective coats at low temperature and a method to highly evaluate structural defects in the protective coat. For the sealing of devices, low melting point glass and the forming technology are developed. 41 refs., 112 figs., 19 tabs.

  18. Luminescence and Electroluminescence of Nd, Tm and Yb Doped GaAs and some II-Vi Compounds

    Science.gov (United States)

    1994-02-28

    the Sixth International Workshop on Electroluminescence, El Paso, Texas, 1992 ( Cingo Puntos Press, El Paso, Texas, 1992), and references therein. 2. R...34. impurity seems to be traps (represented by ellipse) with the atomiclike 4f" core ideal . states. (a) Trapping (liberation) "r.(,r) of electron on REI traps...34structured" impurity seems to be ideal . KINETIC MODEL AND COMPUTATION RESULTS The luminescence kinetic model involving RE`3 "structured" isoelectronic

  19. Electroluminescence enhancement of glass/ITO/PEDOT:PSS/MEH-PPV/PEDOT:PSS/Al OLED by thermal annealing

    Science.gov (United States)

    Hewidy, Dina; Gadallah, A.-S.; Fattah, G. Abdel

    2017-02-01

    Manufacturing of glass/ITO/PEDOT:PSS/MEH-PPV/PEDOT:PSS/Al organic light emitting diode (OLED) by depositing PEDOT:PSS/MEH-PPV/PEDOT:PSS using spin coating has been reported. The roles of PEDOT:PSS in the structure have been reported. It allows transportation of holes from ITO to the highest occupied molecular orbit (HOMO) of MEH-PPV. In additions, it allows transportation of electrons from Al to lowest unoccupied molecular orbit (LUMO) of MEH:PPV. Further, it confines electrons in the LUMO of MEH:PPV due to the higher barrier of PEDOT:PSS of LUMO. The effect of thermal annealing on the current-voltage curve as well as on the electroluminescence intensity has been reported. The results show that the current increased from 25 mA to 52 mA at 7 V, when the sample was thermally annealed at 150 °C. Such enhancement in electrical injection leads to enhancement of the electroluminescence to a factor of 4.7 at the peak luminescence wavelength (∼592 nm). Reasons for electroluminescence improvement caused by thermal annealing have been proposed.

  20. Synthesis and characterization of screen-printed CdS films

    Directory of Open Access Journals (Sweden)

    Kumar V.

    2011-01-01

    Full Text Available Cadmium sulphide films having energy band gap of 2.4 eV found applications in solar cells and electroluminescent devices. CdS polycrystalline films have been prepared on ultra-clean glass substrate by screen-printing technique and then sintered in air. Optimum conditions for preparing good quality screen-printed films have been found. The optical band gaps ‘Eg’ of the CdS films were determined from the UV transmission spectroscopy and were found to be 2.47eV. The Wurtzite structure of CdS films was confirmed by X-ray diffraction analysis. DC conductivity and activation energy of films was also measured in vacuum by two-probe technique.

  1. Defect-assisted tuning of electroluminescence from p-GaN/n-ZnO nanorod heterojunction

    Indian Academy of Sciences (India)

    Lawrence S Vikas; C K Sruthi; Madambi K Jayaraj

    2015-08-01

    Growth of nanostructured ZnO by solution process always lead to the formation of various kinds of defects. Defect states also can aid in improving different properties of the material. In the case of light-emitting diodes (LEDs), major research is focused on tuning the emission colour so as to achieve white emission without the use of any phosphors. Vertically aligned ZnO nanorods were grown over Mg:GaN substrate by hydrothermal process. High-resolution X-ray diffraction (HRXRD) analysis confirms the epitaxial growth of nanorods over the substrate. The photoluminescence (PL) studies revealed a narrow near band edge emission and a broad defect-induced deep level emission. The intensity of deep level emissions related to Zni, Vo, Oi defects decreases on annealing. The - characteristics of the heterojunction showed excellent rectifying nature with electroluminescence emission on forward bias. Device fabricated by as-grown ZnO nanorods emits in the UV–blue region and broad emission in the visible region. While the annealed device emitted only in UV–blue region. The emission wavelengths closely matched with that of defect state emissions obtained in the PL studies. By annealing, various defect states density can be controlled, thereby emission colour tuned from white to blue.

  2. Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

    CERN Document Server

    Nishizawa, N; Munekata, H

    2016-01-01

    We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: firstly, the stripe-laser-like structure that helps intensifying the EL light at the cleaved side walls below the spin injector Fe slab, and secondly, the crystalline AlOx spin tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP when J = 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-polarized-current induced birefringence and optical spin-axis conversion are suggested to account for the observed experimental results.

  3. Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Kai-Chiang Hsu

    2015-11-01

    Full Text Available This paper addressed the effect of post-annealed treatment on the electroluminescence (EL of an n-ZnO/p-GaN heterojunction light-emitting diode (LED. The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

  4. Near-infrared roll-off-free electroluminescence from highly stable diketopyrrolopyrrole light emitting diodes

    Science.gov (United States)

    Sassi, Mauro; Buccheri, Nunzio; Rooney, Myles; Botta, Chiara; Bruni, Francesco; Giovanella, Umberto; Brovelli, Sergio; Beverina, Luca

    2016-09-01

    Organic light emitting diodes (OLEDs) operating in the near-infrared spectral region are gaining growing relevance for emerging photonic technologies, such as lab-on-chip platforms for medical diagnostics, flexible self-medicated pads for photodynamic therapy, night vision and plastic-based telecommunications. The achievement of efficient near-infrared electroluminescence from solution-processed OLEDs is, however, an open challenge due to the low photoluminescence efficiency of most narrow-energy-gap organic emitters. Diketopyrrolopyrrole-boron complexes are promising candidates to overcome this limitation as they feature extremely high photoluminescence quantum yield in the near-infrared region and high chemical stability. Here, by incorporating suitably functionalized diketopyrrolopyrrole derivatives emitting at ~760 nm in an active matrix of poly(9,9-dioctylfluorene-alt-benzothiadiazole) and without using complex light out-coupling or encapsulation strategies, we obtain all-solution-processed NIR-OLEDs with external quantum efficiency as high as 0.5%. Importantly, our test-bed devices show no efficiency roll-off even for high current densities and high operational stability, retaining over 50% of the initial radiant emittance for over 50 hours of continuous operation at 10 mA/cm2, which emphasizes the great applicative potential of the proposed strategy.

  5. Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Sobolev, N.A.; Emel' yanov, A.M.; Shek, E.I.; Vdovin, V.I

    2003-12-31

    We report our results on electroluminescence (EL) in the range of 1.0-1.6 {mu}m, structural defects and electrophysical properties of light-emitting diodes fabricated by implantation of B and P ions into Si substrates with a subsequent thermal annealing at 700-1200 deg. C in argon. A band-to-band emission peak dominates in the EL spectra of all the samples at 80-500 K. The internal quantum efficiency of the band-to-band EL, {eta}{sub int}, and the minority carrier lifetime, {tau}{sub p}, increase with annealing temperature to 1100 deg. C, with the efficiency practically proportional to the lifetime. The maximum {eta}{sub int} was registered after annealing at 1100 deg. C, when there are no extended structural defects. Rod-like defects, partial Frank and perfect prismatic dislocation loops are formed after annealing at lower temperatures. No correlation between the quantum efficiency and the defect structure was revealed with the variation of the annealing temperature. An increase of the value {tau}{sub p}/{eta}{sub int}, proportional to the radiative lifetime, with an increasing temperature has been observed.

  6. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    Energy Technology Data Exchange (ETDEWEB)

    Gallagher, J. D.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Senaratne, C. L.; Sims, P.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Aoki, T. [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287- 1704 (United States)

    2015-03-02

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge{sub 1−y}Sn{sub y} i-layers spanning a broad compositional range below and above the crossover Sn concentration y{sub c} where the Ge{sub 1−y}Sn{sub y} alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  7. Near-infrared roll-off-free electroluminescence from highly stable diketopyrrolopyrrole light emitting diodes

    Science.gov (United States)

    Sassi, Mauro; Buccheri, Nunzio; Rooney, Myles; Botta, Chiara; Bruni, Francesco; Giovanella, Umberto; Brovelli, Sergio; Beverina, Luca

    2016-01-01

    Organic light emitting diodes (OLEDs) operating in the near-infrared spectral region are gaining growing relevance for emerging photonic technologies, such as lab-on-chip platforms for medical diagnostics, flexible self-medicated pads for photodynamic therapy, night vision and plastic-based telecommunications. The achievement of efficient near-infrared electroluminescence from solution-processed OLEDs is, however, an open challenge due to the low photoluminescence efficiency of most narrow-energy-gap organic emitters. Diketopyrrolopyrrole-boron complexes are promising candidates to overcome this limitation as they feature extremely high photoluminescence quantum yield in the near-infrared region and high chemical stability. Here, by incorporating suitably functionalized diketopyrrolopyrrole derivatives emitting at ~760 nm in an active matrix of poly(9,9-dioctylfluorene-alt-benzothiadiazole) and without using complex light out-coupling or encapsulation strategies, we obtain all-solution-processed NIR-OLEDs with external quantum efficiency as high as 0.5%. Importantly, our test-bed devices show no efficiency roll-off even for high current densities and high operational stability, retaining over 50% of the initial radiant emittance for over 50 hours of continuous operation at 10 mA/cm2, which emphasizes the great applicative potential of the proposed strategy. PMID:27677240

  8. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    CERN Document Server

    Li Juan Zo

    2003-01-01

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm sup 2 , the optimal radiance R could reach 0.38 mW/cm sup 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be approx 10 sup - sup 5 cm sup 2 /Vs and approx 10 sup - sup 4 cm sup 2 /Vs, respectively. Overshoot effects...

  9. First proof of topological signature in high pressure xenon gas with electroluminescence amplification

    CERN Document Server

    Ferrario, P.; López-March, N.; Gómez-Cadenas, J.J.; Álvarez, V.; Azevedo, C.D.R.; Borges, F.I.G.; Cárcel, S.; Cebrián, S.; Cervera, A.; Conde, C.A.N.; Dafni, T.; Díaz, J.; Diesburg, M.; Esteve, R.; Fernandes, L.M.P.; Ferreira, A.L.; Freitas, E.D.C.; Gehman, V.M.; Goldschmidt, A.; González-Díaz, D.; Gutiérrez, R.M.; Hauptman, J.; Henriques, C.A.O.; Hernando Morata, J.A.; Irastorza, I.G.; Labarga, L.; Lebrun, P.; Liubarsky, I.; Lorca, D.; Losada, M.; Luzón, G.; Marí, A.; Martín-Albo, J.; Martínez-Lema, G.; Martínez, A.; Miller, T.; Monrabal, F.; Monserrate, M.; Monteiro, C.M.B.; Mora, F.J.; Moutinho, L.M.; Muñoz Vidal, J.; Nebot-Guinot, M.; Novella, P.; Nygren, D.; Para, A.; Pérez, J.; Pérez Aparicio, J.L.; Querol, M.; Renner, J.; Ripoll, L.; Rodríguez, J.; Santos, F.P.; dos Santos, J.M.F.; Serra, L.; Shuman, D.; Simón, A.; Sofka, C.; Sorel, M.; Toledo, J.F.; Torrent, J.; Tsamalaidze, Z.; Veloso, J.F.C.A.; Villar, J.A.; Webb, R.; White, J.T.; Yahlali, N.; Yepes-Ramírez, H.

    2016-01-01

    The NEXT experiment aims to observe the neutrinoless double beta decay of xenon in a high-pressure Xe136 gas TPC using electroluminescence (EL) to amplify the signal from ionization. One of the main advantages of this technology is the possibility to reconstruct the topology of events with energies close to Qbb. This paper presents the first demonstration that the topology provides extra handles to reject background events using data obtained with the NEXT-DEMO prototype. Single electrons resulting from the interactions of Na22 1275 keV gammas and electron-positron pairs produced by conversions of gammas from the Th228 decay chain were used to represent the background and the signal in a double beta decay. These data were used to develop algorithms for the reconstruction of tracks and the identification of the energy deposited at the end-points, providing an extra background rejection factor of 24.3 +- 1.4 (stat.)%, while maintaining an efficiency of 66.7 +- 0.6 (stat.)% for signal events.

  10. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  11. Synthesis and electroluminescent properties of anthracene derivatives containing electron-withdrawing oxide moieties

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Jhin-yeong; Na, Eun Jae; Park, Soo Na [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Lee, Seok Jae [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@wow.hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

    2014-10-15

    Highlights: • Blue fluorescent material is important for application in full-color displays. • We have synthesized emitters based on anthracene connected with oxide moieties. • 1C shows a highly efficient blue EL emission due to electron-injection property. - Abstract: A series of new blue-emitting materials: (4-(10-(naphthalen-2-yl)anthracen-9-yl)phenyl)(phenyl)methanone (1); 9-(naphthalen-2-yl)-10-(4-((diphenyl)phosphine oxide)phenyl)anthracene (2); 9-(naphthalen-2-yl)-10-(4-(phenylsulfonyl)phenyl)anthracene (3) were designed and synthesized via Suzuki cross-coupling reaction. Multilayer OLEDs were fabricated in the following sequence: ITO (180 nm)/NPB (50 nm)/blue materials 1–3 (30 nm)/TPBi (15 nm)/Liq (2 nm)/Al (100 nm). All devices showed the efficient blue EL emissions. In particular, the device using 1 as an emitter exhibited efficient blue electroluminescent properties with a maximum luminous, power, external quantum efficiency and CIE coordinates of 0.36 cd/A, 0.90 lm/W, 0.55% at 20 mA/cm{sup 2} and (x = 0.16, y = 0.20) at 10.0 V, respectively.

  12. First proof of topological signature in high pressure xenon gas with electroluminescence amplification

    CERN Document Server

    Ferrario, P; López-March, N.; Gómez-Cadenas, J.J.; Álvarez, V.; Azevedo, C.D.R.; Borges, F.I.G.; Cárcel, S.; Cebrián, S.; Cervera, A.; Conde, C.A.N.; Dafni, T.; Díaz, J.; Diesburg, M.; Esteve, R.; Fernandes, L.M.P.; Ferreira, A.L.; Freitas, E.D.C.; Gehman, V.M.; Goldschmidt, A.; González-Díaz, D.; Gutiérrez, R.M.; Hauptman, J.; Henriques, C.A.O.; Hernando Morata, J.A.; Irastorza, I.G.; Labarga, L.; Lebrun, P.; Liubarsky, I.; Lorca, D.; Losada, M.; Luzón, G.; Marí, A.; Martín-Albo, J.; Martínez-Lema, G.; Martínez, A.; Miller, T.; Monrabal, F.; Monserrate, M.; Monteiro, C.M.B.; Mora, F.J.; Moutinho, L.M.; Muñoz Vidal, J.; Nebot-Guinot, M.; Novella, P.; Nygren, D.; Para, A.; Pérez, J.; Pérez Aparicio, J.L.; Querol, M.; Renner, J.; Ripoll, L.; Rodríguez, J.; Santos, F.P.; dos Santos, J.M.F.; Serra, L.; Shuman, D.; Simón, A.; Sofka, C.; Sorel, M.; Toledo, J.F.; Torrent, J.; Tsamalaidze, Z.; Veloso, J.F.C.A.; Villar, J.A.; Webb, R.; White, J.T.; Yahlali, N.; Yepes-Ramírez, H.

    2016-01-01

    The NEXT experiment aims to observe the neutrinoless double beta decay of xenon in a high-pressure Xe136 gas TPC using electroluminescence (EL) to amplify the signal from ionization. One of the main advantages of this technology is the possibility to reconstruct the topology of events with energies close to Qbb. This paper presents the first demonstration that the topology provides extra handles to reject background events using data obtained with the NEXT-DEMO prototype. Single electrons resulting from the interactions of Na22 1275 keV gammas and electron-positron pairs produced by conversions of gammas from the Th228 decay chain were used to represent the background and the signal in a double beta decay. These data were used to develop algorithms for the reconstruction of tracks and the identification of the energy deposited at the end-points, providing an extra background rejection factor of 24.3 +- 1.4 (stat.)%, while maintaining an efficiency of 66.7 +- 0.6 (stat.)% for signal events.

  13. Ultrabroad Photoluminescence and Electroluminescence at New Wavelengths from Doped Organometal Halide Perovskites.

    Science.gov (United States)

    Zhou, Yang; Yong, Zi-Jun; Zhang, Kai-Cheng; Liu, Bo-Mei; Wang, Zhao-Wei; Hou, Jing-Shan; Fang, Yong-Zheng; Zhou, Yi; Sun, Hong-Tao; Song, Bo

    2016-07-21

    Doping of semiconductors by introducing foreign atoms enables their widespread applications in microelectronics and optoelectronics. We show that this strategy can be applied to direct bandgap lead-halide perovskites, leading to the realization of ultrawide photoluminescence (PL) at new wavelengths enabled by doping bismuth (Bi) into lead-halide perovskites. Structural and photophysical characterization reveals that the PL stems from one class of Bi doping-induced optically active center, which is attributed to distorted [PbI6] units coupled with spatially localized bipolarons. Additionally, we find that compositional engineering of these semiconductors can be employed as an additional way to rationally tune the PL properties of doped perovskites. Finally, we accomplished the electroluminescence at cryogenic temperatures by using this system as an emissive layer, marking the first electrically driven devices using Bi-doped photonic materials. Our results suggest that low-cost, earth-abundant, solution-processable Bi-doped perovskite semiconductors could be promising candidate materials for developing optical sources operating at new wavelengths.

  14. Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

    Science.gov (United States)

    Mesta, Murat; Carvelli, Marco; de Vries, Rein J.; van Eersel, Harm; van der Holst, Jeroen J. M.; Schober, Matthias; Furno, Mauro; Lüssem, Björn; Leo, Karl; Loebl, Peter; Coehoorn, Reinder; Bobbert, Peter A.

    2013-07-01

    In multilayer white organic light-emitting diodes the electronic processes in the various layers—injection and motion of charges as well as generation, diffusion and radiative decay of excitons—should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile are shown to agree well with experiment. The experimental emission profile was obtained with nanometre resolution from the measured angle- and polarization-dependent emission spectra. The simulations elucidate the crucial role of exciton transfer from green to red and the efficiency loss due to excitons generated in the interlayer between the green and blue layers. The perpendicular and lateral confinement of the exciton generation to regions of molecular-scale dimensions revealed by this study demonstrate the necessity of molecular-scale instead of conventional continuum simulation.

  15. Photovoltaic and Electroluminescence Bifunctional Devices with Starburst Amine and Rare-Earth-Complexes

    Institute of Scientific and Technical Information of China (English)

    WEN Fu-Shan; LI Wen-Lian; WEI Han-Zhi; LIU Yun-Qi; KIM Jin-Hyeok

    2007-01-01

    We fabricate the organic photovoltaic (P V) devices, in which 4,4',4"-tris-(2-methylphenylphenylamino)triphenylamine (m-MTDATA) and rare earth (RE) (dibenzoylmethanato)3(bathohenanthroline) (RE(DBM)3bath) (RE = Nd or Pr) are used as electron donor and acceptor, and investigate their PV properties. The PV diode fabricated in the ptimum processing conditions shows the open-circuit voltage of 1.91 V, short-circuit current of 0.1mA/cm2, fill factor of 0.38, and the overall power conversion efficiency of 1.9% when it is irradiated under UV light (4mW/cm2). The photocurrent density exhibits an increase of 20% at least when a very thin LiF layer is inserted between the RE-complexes and the Al cathode. A strong electroluminescence from the interface is also observed and the maximum luminance of a yellow emission resulted from the exciplex is 580 cd/m2 at 17V bias.

  16. Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bergbauer, Werner [OSRAM Opto Semiconductors GmbH, Regensburg (Germany); FH Deggendorf (Germany); Laubsch, Ansgar; Peter, Matthias; Mayer, Tobias; Bader, Stefan; Oberschmid, Raimund; Hahn, Berthold [OSRAM Opto Semiconductors GmbH, Regensburg (Germany); Benstetter, Guenther [FH Deggendorf (Germany)

    2008-07-01

    As the efficiency and the luminous flux have been increased enormously in the last few years, today Light Emitting Diodes (LEDs) are even pushed to applications like general lighting and Home Cinema Projection. Still, InGaN/GaN heterostructure based LEDs suffer from loss-mechanisms like non-radiative defect and Auger recombination, carrier leakage and piezo-field induced carrier separation. To optimize the high current efficiency we evaluated the benefit of Multiple Quantum Well (MQW) compared to Single Quantum Well (SQW) LEDs. Temperature dependent electroluminescence of colour-coded structures with different Indium content in certain Quantum Wells was measured. The experiments demonstrated a strong temperature and current dependence of the MQW operation. The comparison between different LED structures showed effectively the increased LED performance of those structures which operate with a well adjusted MQW active area. Due to the enhanced carrier distribution in the high current range, these LEDs show a higher light output and additionally a reduced wavelength shift.

  17. Room-temperature near-infrared electroluminescence from boron-diffused silicon pn junction diodes

    Directory of Open Access Journals (Sweden)

    Si eLi

    2015-02-01

    Full Text Available Silicon pn junction diodes with different doping concentrations were prepared by boron diffusion into Czochralski (CZ n-type silicon substrate. Their room-temperature near-infrared electroluminescence (EL was measured. In the EL spectra of the heavily boron doped diode, a luminescence peak at ~1.6 m (0.78 eV was observed besides the band-to-band line (~1.1eV under the condition of high current injection, while in that of the lightly boron doped diode only the band-to-band line was observed. The intensity of peak at 0.78 eV increases exponentially with current injection with no observable saturation at room temperature. Furthermore, no dislocations were found in the cross-sectional transmission electron microscopy image, and no dislocation-related luminescence was observed in the low-temperature photoluminescence spectra. We deduce the 0.78 eV emission originates from the irradiative recombination in the strain region of diodes caused by the diffusion of large number of boron atoms into silicon crystal lattice.

  18. High-Work-Function Transparent Conductive Oxides with Multilayer Films

    Science.gov (United States)

    Song, Chunyan; Chen, Hong; Fan, Yi; Luo, Jinsong; Guo, Xiaoyang; Liu, Xingyuan

    2012-04-01

    Transparent conductive oxide (TCO) films using WO3/Ag/WO3 (WAW) were fabricated under room temperature conditions. WAW has a low sheet resistance of 12 Ω/sq and a work function of 6.334 eV. This is one of the TCOs with the highest work function. These properties make it useful for application in electroluminescent devices and solar cells. Both theoretical calculation and experimental results show that the two WO3 layers strongly affect transparency, while the Ag layer determines transmittance and electrical performances. These rules can be applied in all dielectric/metal/dielectric structures.

  19. Synthesis and Electroluminescent Properties of Julolidine-π-Juloidine Type Materials with the Bulky Adamantane Groups

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kum Hee; Yoon, Seung Soo [Sungkyunkwan Univ., Suwon (Korea, Republic of); Lee, Seok Jae; Kim, Young Kwan [Hongik Univ., Seoul (Korea, Republic of)

    2012-11-15

    A main problem of red emitting material, which contributes to their low EL performances, is the concentration quenching due to the effective self aggregation and the consequent formation of excimers. To avoid this drawback and thus improve the EL properties of red fluorescent OLED devices, many synthetic efforts have been conducted to develop new emitting materials with the structural motifs to suppress self-aggregation by the weakening intermolecular attractive interactions. Particularly, the introduction of bulky moieties in the emitters would provide the steric hindrance between emitting materials in solid state devices and thus reduce the self-aggregation. Nevertheless, EL performances of red materials still need to be improved for the practical applications. In conclusion, we designed and synthesized three julolidine-π-juloidine type emitting materials (1-3) with the bulky adamantane groups. To study their electroluminescent properties, the multilayered OLED devices with the structure of ITO/NPB (40 nm)/ADN : 1-3 (x%) (20 nm)/Alq{sub 3} (40 nm)/Liq (2 nm)/Al were fabricated. All devices using emitters 1-3 showed the efficient emissions, in which their EL performances depend on the structure of emitters sensitively. Particularly, a device using emitter 3 exhibited the efficient orange-red emission with the luminous and power efficiencies of 4.79 cd/A and 1.76 lm/W at 20 mA/cm{sup 2}, respectively. The CIE coordinates of this device was (0.57, 0.42) at 7.0 V.

  20. Synthesis and light-emitting properties of organic electroluminescent compounds and their metal complexes

    Institute of Scientific and Technical Information of China (English)

    CUI Jianzhong; Kim Sung-Hoon

    2004-01-01

    Several organic electroluminescent (EL) compounds, 2,2′-(1,4-phenylenedivinylene)bis-3,3-dimethyl-in- dolenine (1), 2,2′-(1,4-phenylenedivinylene)bis-benzoxazole (2), 2,2′-(1,4-phenylenedivinylene)bis-benzothiazole (3), 4,4′- (1,4-phenylenedivinylene)bis-quinoline (4), 2,2′-(1,4-phenyle- nedivinylene)bis-quinoline (5), 2,2′-(1,4-phenylenedivinyle- ne)bis-1,3,3-trimethyl-indolenine dichlo ride (6), 2,2′-(1,4- phenylene-divinylene)bis-1-hydro-3,3-dimethyl-indolenine dichloride (7), 2,2′-(1,4-phenylenedivinylene)bis-8-acetoxy- quinoline (8), 2,2′-(1,4-phenylenedivinylene)bis-8-hydroxyq- uinoline (9) and metal complexes of 9, Al(PHQ) (10) and Zn(PHQ) (11), have been synthesized and characterized. The crystal structure of 6 was determined. Light emitting properties of the prepared compounds have been investigated. 1 produces an orange-yellow emission (λmax = 575 nm). The cation, 6, gives a red emission (λmax = 607 nm), which is shifted 32 nm to the red compared to 1. 8 produces a yellow emission (λmax = 567 nm). The metal complex 10 gives a red emission (λmax = 610 nm), which is a red shift of 43 nm compared to 8. The change in structure in the prepared compound caused a change in the electron distribution in the compounds, which induces a large wavelength shift of the emitted-light. Thermal analysis showed that the decomposition temperatures of the metal complexes (10, 11) were higher than those for the smaller organic molecular compounds (1-9). Therefore, metal complexes (10, 11) can be used as EL materials over a larger temperature range.

  1. SYNTHESIS OF POLY(2,5-DIPHENYL-1,3,4-THIADIAZOLYL)-4,4'-VINYLENE AND ITS ELECTROLUMINESCENT PERFORMANCE

    Institute of Scientific and Technical Information of China (English)

    Shou-gen Yin; Zheng Xu; Yan-bing Hou; Yong-sheng Wang; Xu-rong Xu; Wen-qiang Huang; Fu-qiang Zhang

    1999-01-01

    The synthesis, characterization and electroluminescence performance of a new type of conjugated polymer, poly(2,5-diphenyl-1,3,4-thiadiazolyl)-4,4'-vinylene (TPPV) are presented. A light-emitting diode consisted of ITO/TPPV/Al is driven at about 4.0 V and has a peak emission wavelength of 485 nm. This blue-shift of the peak is due to the decrease of conjugate degree of TPPV compared to PPV. This result is in accord with that determined by XPS and theoretical model of MNDO/3

  2. Synthesis, structure, photophysical and electroluminescent properties of a blue-green self-host phosphorescent iridium(III) complex

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Jing; Wang, Hua [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Xu, Huixia, E-mail: xuhuixiatyut@163.com [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Li, Jie; Wu, Yuling; Du, Xiaogang [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Xu, Bingshe, E-mail: xubs@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2015-07-15

    A kind of blue-green self-host phosphorescent iridium(III) complex, (CzPhBI){sub 2}Ir(tfmptz) [CzPhBI = 9-(6-(2-phenyl-1-benzimidazolyl)hexyl)-9-carbazole; tfmptz = 2-(5-trifluoromethyl-1,2,4-triazolyl)pyridine], was designed and synthesized. The synthesized iridium(III) complex was characterized by {sup 1}H NMR, {sup 19}F NMR, FT-IR, elemental analysis and X-ray single-crystal diffraction, respectively. Its thermal properties, optical properties and electrochemical properties were also investigated. The host-free organic electroluminescent devices with the configuration of ITO/MoO{sub 3} (3 nm)/NPB (30 nm)/TAPC (15 nm)/(CzPhBI){sub 2}Ir(tfmptz) (30 nm)/TBPI (30 nm)/LiF (1 nm)/Al (100 nm) had been fabricated. The devices exhibited excellent performance indicating that (CzPhBI){sub 2}Ir(tfmptz) was a promising phosphorescent material. - Highlights: • A blue-green self-host phosphorescent iridium(III) complex was synthesized. • The molecular structure, and photophysical properties were investigated. • Electroluminescent performance in host-free devices were discussed. • The maximum current efficiency 8.2 cd A{sup −1} and the maximum brightness 5420 cd m{sup −2} were achieved.

  3. Film Reviews.

    Science.gov (United States)

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  4. Electrical Properties and Electroluminescence of 4H-SiC p-n Junction Diodes

    Institute of Scientific and Technical Information of China (English)

    Sun Guosheng; Zhang Yongxing; Gao Xin; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin

    2004-01-01

    Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 + C2H4 + H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ~ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications.

  5. Near-Intrinsic Energy Resolution for 30 to 662 keV Gamma Rays in a High Pressure Xenon Electroluminescent TPC

    CERN Document Server

    Álvarez, V; Cárcel, S; Castel, J; Cebrián, S; Cervera, A; Conde, C A N; Dafni, T; Dias, T H V T; Díaz, J; Egorov, M; Esteve, R; Evtoukhovitch, P; Fernandes, L M P; Ferrario, P; Ferreira, A L; Freitas, E D C; Gehman, V M; Gil, A; Goldschmidt, A; Gómez, H; Gómez-Cadenas, J J; González-Díaz, D; Gutiérrez, R M; Hauptman, J; Morata, J A Hernando; Herrera, D C; Iguaz, F J; Irastorza, I G; Jinete, M A; Labarga, L; Laing, A; Liubarsky, I; Lopes, J A M; Lorca, D; Losada, M; Luzón, G; Marí, A; Martín-Albo, J; Martínez, A; Miller, T; Moiseenko, A; Monrabal, F; Monteiro, C M B; Mora, F J; Moutinho, L M; Vidal, J Muñoz; da Luz, H Natal; Navarro, G; Nebot, M; Nygren, D; Oliveira, C A B; Palma, R; Pérez, J; Aparicio, J L Pérez; Renner, J; Ripoll, L; Rodríguez, A; Rodríguez, J; Santos, F P; Santos, J M F dos; Segui, L; Serra, L; Shuman, D; Simón, A; Sofka, C; Sorel, M; Toledo, J F; Tomás, A; Torrent, J; Tsamalaidze, Z; Vázquez, D; Veloso, J F C A; Villar, J A; Webb, R; White, J T; Yahlali, N

    2012-01-01

    We present the design, data and results from the NEXT prototype for Double Beta and Dark Matter (NEXT-DBDM) detector, a high-pressure gaseous natural xenon electroluminescent time projection chamber (TPC) that was built at the Lawrence Berkeley National Laboratory. It is a prototype of the planned NEXT-100 $^{136}$Xe neutrino-less double beta decay ($0\

  6. Synthesis and Characterization of Electroresponsive Materials with Applications In: Part I. Second Harmonic Generation. Part II. Organic-Lanthanide Ion Complexes for Electroluminescence and Optical Amplifiers.

    Science.gov (United States)

    Claude, Charles

    1995-01-01

    Materials for optical waveguides were developed from two different approaches, inorganic-organic composites and soft gel polymers. Inorganic-organic composites were developed from alkoxysilane and organically modified silanes based on nonlinear optical chromophores. Organically modified silanes based on N-((3^' -trialkoxysilyl)propyl)-4-nitroaniline were synthesized and sol-gelled with trimethoxysilane. After a densification process at 190^circC with a corona discharge, the second harmonic of the film was measured with a Nd:YAG laser with a fundamental wavelength of 1064nm, d_{33} = 13pm/V. The decay of the second harmonic was expressed by a stretched bi-exponential equation. The decay time (tau _2) was equal to 3374 hours, and was comparable to nonlinear optical systems based on epoxy/Disperse Orange 1. The processing temperature of the organically modified silane was limited to 200^circC due to the decomposition of the organic chromophore. Soft gel polymers were synthesized and characterized for the development of optical waveguides with dc-electrical field assisted phase-matching. Polymers based on 4-nitroaniline terminated poly(ethylene oxide-co-propylene oxide) were shown to exhibit second harmonic generation that were optically phase-matched in an electrical field. The optical signals were stable and reproducible. Siloxane polymers modified with 1-mercapto-4-nitrobenzene and 1-mercapto-4-methylsulfonylstilbene nonlinear optical chromophores were synthesized. The physical and the linear and nonlinear optical properties of the polymers were characterized. Waveguides were developed from the polymers which were optically phase -matched and had an efficiency of 8.1%. The siloxane polymers exhibited optical phase-matching in an applied electrical field and can be used with a semiconductor laser. Organic lanthanide ion complexes for electroluminescence and optical amplifiers were synthesized and characterized. The complexes were characterized for their thermal and

  7. The ultraviolet and blue luminescence properties of ZnO:Zn thin film

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The ultraviolet (UV) and blue luminescence of Zn-rich zinc oxide thin film deposited by electron-beam evaporation have been investigated at room temperature (RT). We observed that the UV and blue electroluminescence (EL) emission band centered around 480 nm which is blue shifted in comparison with that of the ZnO thin film prepared by low pressure metal organic chemical vapor deposition (LP MOCVD). The UV emission is much stronger than blue emission in the photoluminescence (PL) spectra. The field-induced ionization of excited luminescent centers of ZnO:Zn thin film at high electric field and the difference between PL and EL are discussed. The experiments show that the ZnO:Zn thin film provides a hopeful new mechanism to obtain UV and blue emission.

  8. Photoluminescence and Electroluminescence Properties of CdTe Nanoparticles in Conjugated Polymer Hosts

    Institute of Scientific and Technical Information of China (English)

    GUO, Fengqi; XIE, Puhui

    2009-01-01

    The photoinduced energy transfer process from conjugated polymer (PPE4+) to CdTe nanocrystals was found both in solutions and in thin films by a fluorescence spectroscopic technique. Films of PPE4+ blended with CdTe-2 nanocrystals were formed by an electrostatic layer-by-layer assembly technique. Light emitting diodes were fabricated using CdTe-2 as an emitter in PPE4+ host. PPE4+ works as a molecular wire in the energy transfer process from the polymer to the CdTe-2 nanocrystals.

  9. Controlling charge carrier injection in organic electroluminescent devices via ITO substrate modification

    CERN Document Server

    Day, S

    2001-01-01

    and the ITO substrate was found to shift the work function of the electrode, and so modify the barrier to hole injection. Scanning Kelvin probe measurements show that the ITO work function is increased by 0.25 eV with a film of TNAP, while a C sub 6 sub 0 film is found to reduce the work function by a comparable amount. The former has been attributed to a charge-transfer effect resulting in Fermi level alignment between the ITO and the TNAP layer, however the latter is believed to result from both charge transfer and a covalent interaction between C sub 6 sub 0 and ITO. The performance of devices incorporating these modified ITO electrode are rationalised in terms of the work function modification, film thicknesses and the hole transport properties of the two films. Competition between the induced work function change and the increasingly significant tunnelling barrier with thickness means that device performance is not as good as that provided by the SAMs. Direct processing of the ITO substrate has also been...

  10. Electroluminescence and negative differential resistance studies of TPD:PBD:Alq3 blend organic-light-emitting diodes

    Indian Academy of Sciences (India)

    M A Mohd Sarjidan; S H Basri; N K Za’aba; M S Zaini; W H Abd Majid

    2015-02-01

    Ternary system of single-layer organic-light-emitting diodes (OLEDs) were fabricated containing tris(8-hydroxyquinoline) aluminium (Alq3) blended with N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine and 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole small molecules. Electroluminescence properties were investigated with respect to blend systems. Significant improvement in turn-on voltage and luminance intensity was observed by employing the blends technique. Negative differential resistance (NDR) characteristics observed at a low voltage region in blended OLED is related to the generation of guest hopping site and phonon scattering phenomenon. However, luminescence of the devices is not altered by the NDR effect.

  11. Effect of gold nanorods and nanocubes on electroluminescent performances in organic light-emitting diodes and its working mechanism

    Directory of Open Access Journals (Sweden)

    Ying Xu

    2015-06-01

    Full Text Available In this manuscript we investigated the influence of Au nanoparticles on electrical and electroluminescent (EL performances in organic light-emitting diodes (OLEDs via doping as-synthesized Au nanorods (NRs or nanocubes (NCs into hole transport layer (HTL. Through accurately controlling the distance between the Au NRs and the emitting layer, altering the guest emitter’s lifetime, and replacing Au NRs with Au NCs to satisfy a better spectrum overlap with the emission guest, we got a conclusion that doping Au NRs or NCs into HTL has no significant influence on the device’s electrical and EL performances, although we observed an increase in the spontaneous emission rate in a fluorescent material by the exciton-surface plasmon-coupling. Our results suggest that a further research on emission mechanism in surface plasmon-enhanced OLEDs is still in process.

  12. Design and Synthesis of a Highly Stable Six-hydrogen-bonded Self-assembly Yellowish Green Electroluminescent Molecular Duplex

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    This paper describes the design, synthesis and characterization of a hydrogen-bonded molecular duplex with 1,8-naphthalimide fluorescent pendants. The two oligoamide molecular strands, with complementary hydrogen bond sequences of DDADAA and AADADD, caa form an ultra stable self-assembly duplex. Its molecular structure was confirmed by 1H NMR and ESI-MS, and its photoluminescence properties were determined. The resulting duplex exhibited a dramatically enhanced photoluminescence (PL) quantum efficiency of 63.7% compared to the corresponding 1,8-naphthalimide segment (32.4%), suggesting that the formation of the duplex with larger molecular weight could successfully inhibit the quenching of the fluorescent pendant.This novel duplex is a prospective candidate for new electroluminescent emitter.

  13. Blue to red electroluminescence emission from organic light-emitting diodes based on π-conjugated organic semiconductor materials

    Science.gov (United States)

    Sharbati, Mohammad Taghi; Panahi, Farhad; Nekoei, Abdo-Reza; Emami, Farzin; Niknam, Khodabakhsh

    2014-01-01

    Blue to red organic light-emitting diodes based on a series of newly synthesized distyrylbenzenes have been demonstrated. Their optical properties have been theoretically and experimentally studied in order to inquire into the substitution effects (such as electron-donating, electron-withdrawing, and steric hindrance) on the emission color. Density functional theory at B3LYP/6-311+G(d) level of calculation was employed to obtain the molecular structures and highest occupied molecular orbital and lowest unoccupied molecular orbital surfaces. Electroluminescence emission range of compounds could be tuned by changing the strength of the acceptor component and using push-pull and nonplanarity effects from 483 (blue) to 600 (red) nm.

  14. Poly(meta-phenylene) Derivative with Rigid Twisted Biphenyl Units in Backbone: Synthesis, Structural Characterization,Photophysical Properties and Electroluminescence

    Institute of Scientific and Technical Information of China (English)

    ZHENG Yan; YANG Bing; ZHANG Hai-quan; LU Ping; SHEN Fang-zhong; LIU Lin-lin; XU Hai; YANG Guang-di; MA Yu-guang

    2007-01-01

    A soluble poly(meta-phenylene) derivative with rigid twisted biphenyl unit was synthesized by the Yamamoto coupling reaction. The polymer is soluble in common organic solvents, and the number-average molecular weight is about 6500. The UV-Vis and quantum chemical calculation indicate that the different conformation segments named "conformers" exist in the polymer backbones; it was also further confirmed by the single crystal X-ray diffraction study of the dimeric model compound. The π-π* transition of biphenyl segments of twisted and planar conformations made the polymer exhibit a strong absorption around 256 nm and a weak absorption at about 300 nm. Furthermore,the polymer exhibits a strong UV photoluminescence at 372 nm when the excitation wavelengths are longer than 300 nm. The ultraviolet-emitting electroluminescence(EL) device with the single layer structure shows EL λmax of the derivative at 370 nm.

  15. Theoretical Investigation on the Electron and Energy Transfer between Peripheral Carrier Transport Groups and Central Chromophores in Electroluminescent Materials

    Institute of Scientific and Technical Information of China (English)

    潘玉钰; 刘丹丹; 许海; 刘晓冬; 孙冠楠; 杨兵; 马於光

    2012-01-01

    The molecular materials with structures of luminescent core and peripheral carrier groups (e.g. carbazoles), have exhibited high-performance in organic light-emitting diodes (OLEDs). Present work is to understand the basic process of electronic and energy exchange between the peripheral functional groups and the central core through quantum chemical analysis. As an example, 4,7-bis(9,9-bis(6-(9H-carbazol-9-yl)hexyl)-9H-fluoren-2-yl)benzo[c]- [1,2,5]thiadiazole (TCBzC) is investigated in regards to optoelectronic properties using density functional theory (DFT). The results suggest that the forbidden transition from peripheral carbazole to the central chromophore core makes for separated electrical and optical properties, and high performance electroluminescence (EL) is mainly at- tributed to the energy-transfer from carbazoles to the fluorene derivative core.

  16. Cathodoluminescence and electroluminescence from multi-layered organic structures induced by field electron emission from carbon nanotubes

    Science.gov (United States)

    Kuznetzov, Alexander A.; Zakhidov, Alexander A.; Ovalle, Raquel; Nanjundaswami, Rashmi; Williams, Christopher; Zhang, Mei; Lee, Sergey B.; Ferraris, John; Zakhidov, Anvar A.

    2005-10-01

    We report the observation of cathodoluminescence (CL) of organic multilayers of tris-(8-hydroxyquinoline) aluminium (Alq3) and 2- (4biphenyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD) deposited on ITO-coated glass, with and without hole transport layer and compare it with electroluminescence (EL) from similar devices. Excitation of the CL of such multilayer organic anodes was accomplished by low energy electrons field emitted by single walled carbon nanotube cathodes. The dependence of CL spectrum and intensity on voltage (V), current (I), type of transport layer and the cathode-anode geometry has been studied. We propose carbon nanotubes as efficient cathodes for stable CL emission from multi-layer anodes at small cathode-anode separations. The role of hole-transport layer is also discussed.

  17. Near infrared electroluminescence of ZnMgO/InN core-shell nanorod heterostructures grown on Si substrate.

    Science.gov (United States)

    Wu, Guoguang; Zheng, Weitao; Gao, Fubin; Yang, Hang; Zhao, Yang; Yin, Jingzhi; Zheng, Wei; Li, Wancheng; Zhang, Baolin; Du, Guotong

    2016-07-27

    This paper presents a systematic investigation of a ZnMgO/InN core-shell nanorods heterojunction device on a p-Si substrate. Here we demonstrated the heteroepitaxial growth of the well-aligned ZnMgO/InN core-shell nanorods structure, which enabled an increased heterojunction area to improve the carrier injection efficiency of nanodevices by plasma-assisted molecular beam epitaxy combined with metal-organic chemical vapor deposition. In situ X-ray photoelectron spectroscopy measurements were performed on the ZnMgO nanorods, the interface of ZnMgO/InN and the InN core-shell nanorods to fully understand the structure and working mechanism of the heterojunction device. The current transport mechanism has been discussed in terms of the characteristics of current-voltage and the energy band diagram of the n-InN/ZnMgO/p-Si heterojunction. At a low forward voltage, the current transport followed the dependence of I ∼ V(1.47), which was attributed to the deep-level assisted tunneling. When the forward voltage was larger than 10 V, the current followed the relation of I ∼ V(2) because of the radiative recombination process. In accordance with the above conclusion, the near-infrared electroluminescence of the diode could be observed after the forward bias voltage up to 11.6 V at room temperature. In addition, the size quantization effect and the intrinsic electron accumulation of the InN core-shell nanorods were investigated to explain the blueshift and broadened bandwidth. Furthermore, the light output power of about 0.6 microwatt at a fixed wavelength of 1500 nm indicated that our study will further provide a useful route for realizing the near-infrared electroluminescence of InN on Si substrate.

  18. Film/NotFilm

    OpenAIRE

    Willems, Gertjan

    2016-01-01

    Although Samuel Beckett (1906-1989) showed a genuine interest in audio-visual media in his fascinating and innovative radio plays and television works, and in 1936 even wrote a letter to Sergei Eisenstein to be accepted to the famous Soviet film school VGIK, the 22-minute Film (1965) was his only venture into cinema. Beckett conceived the film, wrote the screenplay, supervised the production and, as one of the film’s crew members recalled and as the director Alan Schneider himself acknowledge...

  19. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  20. A Stable Blue Organic Electroluminescent Material%一种稳定的蓝色有机电致发光材料

    Institute of Scientific and Technical Information of China (English)

    郑新友; 吴有智; 朱文清; 张步新; 蒋雪茵; 张志林; 许少鸿

    2002-01-01

    In order to compare two kinds of blue electroluminescent materials, we have investigated two kinds of blue OLEDs with the similar structrue ITO/CuPc/NPB/JBEM: perylene/Alq/Mg: Ag [ device (J) ] and ITO/CuPc/NPB/DPVBi: perylene/Alq/Mg: Ag [device(D) ]. The difference of luminance and efficiency was not obvious for the two devices. However, there was remarkable difference for their lifetime. The device(J) achieved longer half lifetime of 1035 h at initial luminance of 100 cd/m2, and that of device(D) was only 255 h. According to their energy level diagrams , the difference of their stability may originate from different host materials in the two devices. It may be attributed to the better thermal stability of JBEM molecules than that of DPVBi. It is shown that JBEM may be a promising blue organic electroluminescent material with great stability.

  1. Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

    Energy Technology Data Exchange (ETDEWEB)

    Malysheva, E. I., E-mail: malysheva@phys.unn.ru; Dorokhin, M. V.; Ved’, M. V.; Kudrin, A. V.; Zdoroveishchev, A. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

    2015-11-15

    The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/n-GaAs/n{sup +}-GaAs/GaMnAs and InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb is carried out. It is established that the circularly polarized electroluminescence is associated with the spin injection of electrons from a ferromagnetic semiconductor layer. The luminescence parameters are determined by the properties of these layers. It is shown that the ferromagnetic properties of the GaMnSb layer allow us to obtain circularly polarized emission at room temperature from InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb heterostructures.

  2. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq{sub 3}-based organic light-emitting diodes at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T. [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Zhang, Sijie, E-mail: Sijie.zhang@scu.edu.cn, E-mail: w.gillin@qmul.ac.uk [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Gillin, W. P., E-mail: Sijie.zhang@scu.edu.cn, E-mail: w.gillin@qmul.ac.uk [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2016-01-11

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq{sub 3}) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq{sub 3} system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  3. Electroluminescence imaging of Morgan Solar Inc.'s 4th generation CPV technology for in-line quality control and optical efficiency estimation

    Science.gov (United States)

    Sinclair, Michael; Dufour, Pascal; Drew, Kristine; Myrskog, Stefan; Morgan, John Paul

    2014-10-01

    An electroluminescence test for a Concentrated PV system is presented with the objective of capturing high resolution pseudo-efficiency maps that highlight optical defects in the concentrator system. Key parameters of the experimental setup and imaging system are presented. Image processing is discussed, including comparison of experimental to nominal results and the quantitative estimation of optical efficiency. Efficiency estimates are validated using measurements under a collimated solar simulator and ray-tracing software. Further validation is performed by comparison of the electroluminescence technique to direct mapping of the optical efficiency. Initial results indicate the mean estimation error for Isc is -2.4% with a standard deviation is 6.9% and a combined measurement and analysis time of less than 5 seconds per optic. An extension of this approach to in-line quality control is discussed.

  4. Nanostructured Sublayers for Improved Light Extraction of Top-Emitting and Transparent Organic Electroluminescent Devices

    Science.gov (United States)

    2007-05-01

    fluoride and magnesium- silver alloy were thermally evaporated with an evaporation rate ratio of 10:1 to form a translucent cathode (10 nm). The schemes for...onto the transfer film and transferred to the substrate. A small molecular HTL, N,N’-diphenyl-N,N’-bis(1-naphthyl)-(1,1’-biphenyl)- 4,4’- diamine (α...Appl. Phys. Lett. 88, 113515 [14] Fan, S H, Villeneuve P R, Joannopoulos J D, and Schubert E F 1997 Phys. Rev. Lett. 78, 3294 [15] Schnitzer I

  5. Electroluminescence in Potassium Iodide Single Crystals Containing Potassium Metal Colloids (VII) -Theory of the Frequency Dependence of the Threshold a.c. Electric Field-

    OpenAIRE

    HAGIHARA, Takeshi; HAYASHIUCHI, Yoshihiro

    1996-01-01

    Electroluminescence(EL) in colored KI single crystals containing potassium metal colloids has been studied theoretically to understand the characteristics of the EL. A simple rate equation is introduced to describe the dynamical change in numbers of both luminescence centers and conduction electrons produced from the potassium metal colloids by external high a.c. electric field excitation. The present model explains well the EL experimental results reported previously, e.g., the frequency dep...

  6. Single-layer electroluminescent devices based on fluorene-1H-pyrazolo[3,4-b]quinoxaline co-polymers

    Science.gov (United States)

    Pokladko-Kowar, Monika; Danel, Andrzej; Chacaga, Łukasz

    2013-11-01

    A fluorene based copolymer was synthesized for electroluminescent application. To the main chain of polymer the nitrogen heterocyclic, 1H-pyrazolo[3,4-b]quinoxaline, unit was introduced. The incorporation of this derivative tuned the emission from the blue to yellow-green one. A simple, single layered device was fabricated with the configuration ITO/PEDOT/co-poly-FLU-PQX/Ca/Mg.

  7. Syntheses and electroluminescent properties of two europium ternary complexes Eu(DBM){sub 3}(PBO) and Eu(DBM){sub 3}(PBT)

    Energy Technology Data Exchange (ETDEWEB)

    Guan Min [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Gao Lihua [Department of Chemistry, Beijing Normal University, Beijing 100875 (China); Wang Shanshan [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Huang Chunhui [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China)], E-mail: chhuang@pku.edu.cn; Wang Kezhi [Department of Chemistry, Beijing Normal University, Beijing 100875 (China)

    2007-12-15

    Two europium complexes, Eu(DBM){sub 3}(PBO) and Eu(DBM){sub 3}(PBT) (DBM=dibenzoylmethanato, PBO=2-(2-pyridyl)benzoxazole, PBT=2-(2-pyridyl)benzothiazole), were prepared and used as emitting materials in organic electroluminescent (EL) devices. The devices with the structures ITO/TPD/Eu(DBM){sub 3}(PBO) (or Eu(DBM){sub 3}(PBT)/BCP/Alq{sub 3}/Mg:Ag/Ag emit red light originating from the europium complexes.

  8. Conjugated Polymer Chains Confined in Vertical Nanocylinders of a Block-Copolymer Film: Preparation, Characterization, and Optoelectronic Function

    KAUST Repository

    Dong, Ban Xuan

    2013-01-15

    Hybrid materials composed of phase-separated block copolymer films and conjugated polymers of the phenylenevinylene family (PPV) are prepared. The PPV chains are embedded in vertical cylinders of nanometer diameter in the block-copolymer films. The cylinders span continuously the whole film thickness of 70 nm. Incorporation of the PPV chains into the one-dimensional cylinders leads to modified photoluminescence spectra and to large absorption anisotropy. The hybrid films show electroluminescence from the PPV chains in a simple light-emitting device at minute doping concentrations, and also exhibit a factor of 19 increase in electron transport efficiency along the single PPV chains. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Electroluminescence from InGaN quantum dots in a monolithically grown GaN/AlInN cavity

    Energy Technology Data Exchange (ETDEWEB)

    Dartsch, Heiko; Tessarek, Christian; Figge, Stephan; Aschenbrenner, Timo; Kruse, Carsten; Hommel, Detlef [University of Bremen, Institute of Solid State Physics - Semiconductor Epitaxy (Germany); Schowalter, Marco; Rosenauer, Andreas [University of Bremen, Institute of Solid State Physics - Electron Microscopy (Germany)

    2011-07-01

    InGaN quantum dots (QDs) and their implementation into the micro cavity of a vertical distributed Bragg reflector (DBR) resonator are the key elements to achieve single photon emission required for quantum cryptography. However, the epitaxial overgrowth of InGaN QDs is challenging because they are easily destroyed by elevated temperatures. For this reason a common approach is the fabrication of a hybrid cavity structure by non epitaxial deposition of a dielectric top DBR. We present the first successful implementation of electrically driven InGaN QDs into a monolithic GaN/AlInN cavity structure fully epitaxial grown by metal organic vapor phase epitaxy. A single layer of InGaN QDs has been embedded in a n- and p-type doped 5{lambda} GaN cavity surrounded by a 40 fold bottom- and a 10 fold GaN/AlInN top-DBR. The bottom DBR shows a reflectivity of 97%. Structural properties were investigated by scanning transmission microscopy (STEM) and will be discussed. Electroluminescence of the InGaN QDs was achieved by the application of intra cavity contacts. This demonstrates for the first time the possibility of using InGaN QD in fully epitaxial made devices like vertical cavity surface emitting lasers or single photon sources. We present the first successful implementation of electrically driven InGaN QDs into a monolithic GaN/AlInN cavity structure fully epitaxial grown by metal organic vapor phase epitaxy. Therefore a single layer of InGaN QDs has been embedded in a n- and p-type doped 5{lambda} GaN cavity surrounded by a 40 fold bottom- and a 10 fold GaN/AlInN top-DBR. The bottom DBR shows a reflectivity of 97%. Electroluminescence of the InGaN QDs was achieved by the application of intra cavity contacts. Optical and structural properties of the device are discussed. This demonstrates for the first time the possibility of using InGaN QD in fully epitaxial made devices like vertical cavity surface emitting lasers or single photon sources.

  10. Electroluminescence from charge transfer states in Donor/Acceptor solar cells

    DEFF Research Database (Denmark)

    Sherafatipour, Golenaz; Madsen, Morten

    charge transfer (CT) excitons, which is Coulombically bound interfacial electron- hole pairs residing at the donor/acceptor heterojunctions. The CT state represents an intermediate state between the exciton dissociation and recombination back to the ground state. Since the recombination of photo...... at the donor/acceptor interface is detected. As a less studied system, we examine here the interfacial charge transfer state recombination in DBP:C70 thin-films. The weak EL from the small molecule solar cell biased in the forward direction gives valuable information about the CT state recombination, from...... which the maximum open-circuit voltage can be estimated, and further can be used in the modeling and optimization of the OPV devices. [1] C. Deibe, T. Strobe, and V. Dyakonov, “Role of the charge transfer state in organic donor-acceptor solar cells,” Adv. Mater., vol. 22, pp. 4097–4111, 2010. [2] K...

  11. Preparation, Photo and Electroluminescence Properties of Novel Rare Earth Aromatic Carboxylates

    Institute of Scientific and Technical Information of China (English)

    林秦; 符连社; 梁玉军; 郑佑轩; 林君; 张洪杰

    2002-01-01

    Novel soluble rare earth aromatic carboxylates were prepared. The triplet energy level of organic ligand was measured. The photoluminescence properties of the Tb3+ and Eu3+ aromatic carboxylates and lifetimes were investigated, which indicated that these rare earth complexes have high quantum efficiency. Because of their excellent solubility, polymer-doping rare earth carboxylates were fabricated as thin films by spin-coating method and their luminescence properties were studied. Some rare earth organic light-emitting diodes were successfully fabricated which performed high pure color. The maximum luminance of the device of ITO/PVK/PVK∶Tb(AS)3Phen∶PBD/PBD/Al is 32 cd*m-2 at 28 V.

  12. Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Madhava Rao MV

    2009-01-01

    Full Text Available Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene (DBPPV. The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt% before annealing (1.78 cd/A and after annealing (2.45 cd/A having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode.

  13. Magnetic field enhanced electroluminescence in organic light emitting diodes based on electron donor-acceptor exciplex blends

    Science.gov (United States)

    Baniya, Sangita; Basel, Tek; Sun, Dali; McLaughlin, Ryan; Vardeny, Zeev Valy

    2016-03-01

    A useful process for light harvesting from injected electron-hole pairs in organic light emitting diodes (OLED) is the transfer from triplet excitons (T) to singlet excitons (S) via reverse intersystem crossing (RISC). This process adds a delayed electro-luminescence (EL) emission component that is known as thermally activated delayed fluorescence (TADF). We have studied electron donor (D)/acceptor(A) blends that form an exciplex manifold in which the energy difference, ΔEST between the lowest singlet (S1) and triplet (T1) levels is relatively small (field of 50 mT at ambient. Moreover the MEL response is activated with activation energy similar that of the EL emission. This suggests that the large magneto-EL originates from an additional spin-mixing channel between singlet and triplet states of the generated exciplexes, which is due to TADF. We will report on the MEL dependencies on the temperature, bias voltage, and D-A materials for optimum OLED performance. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  14. Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    RUAN Jun; YU Tong-Jun; JIA Chuan-Yu; TAO Ren-Chun; WANG Zhan-Guo; ZHANG Guo-Yi

    2009-01-01

    Polarization-resolved edge-emitting electroluminescence (EL) studies of InGaN/GaN MQWs of wavelengths from near-UV (390nm) to blue (468nm) light-emitting diodes (LEDs) are performed.Although the TE mode is dominant in all the samples of InGaN/GaN MQW LEDs,an obvious difference of light polarization properties is found in the InGaN/GaN MQW LEDs with different wavelengths.The polarization degree decreases from 52.4% to 26.9% when light wavelength increases.Analyses of band structures of InGaN/GaN quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue LEDs,and the high luminescence polarization degree of UV LEDs mainly comes from QW confinement and the strain effect.Therefore,indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of InGaN/GaN MQW LEDs from near violet to blue.

  15. Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells

    Science.gov (United States)

    Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

    2016-06-01

    Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A‑1 and 40.6 cd A‑1, respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A‑1 and 25.4 cd A‑1 for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays.

  16. Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

    Science.gov (United States)

    Maekura, T.; Tanaka, K.; Motoyama, C.; Yoneda, R.; Yamamoto, K.; Nakashima, H.; Wang, D.

    2017-10-01

    The direct band gap electroluminescence (EL) intensity was investigated for asymmetric metal/Ge/metal diodes fabricated on n-type Ge with doping levels in the range of 4.0 × 1013-3.1 × 1018 cm-3. Up to a doping level of 1016 cm-3 order, commercially available (100) n-Ge substrates were used. To obtain a doping level higher than 1017 cm-3 order, which is commercially unavailable, n+-Ge/p-Ge structures were fabricated by Sb doping on p-type (100) Ge substrates with an in-diffusion at 600 °C followed by a push-diffusion at 700 °C-850 °C. The EL intensity was increased with increasing doping level up to 1.0 × 1018 cm-3. After that, it was decreased with a further increase in n-type doping level. This EL intensity decrease is explained by the decreased number of holes in the active region. One reason is the difficulty in hole injection through the PtGe/n-Ge contact due to the occurring of tunneling electron current. Another reason is the loss of holes caused by both the small thickness of n+-Ge layer and the existence of n+p junction.

  17. Phosphorescent Iridium(III) Complexes Bearing Fluorinated Aromatic Sulfonyl Group with Nearly Unity Phosphorescent Quantum Yields and Outstanding Electroluminescent Properties.

    Science.gov (United States)

    Zhao, Jiang; Yu, Yue; Yang, Xiaolong; Yan, Xiaogang; Zhang, Huiming; Xu, Xianbin; Zhou, Guijiang; Wu, Zhaoxin; Ren, Yixia; Wong, Wai-Yeung

    2015-11-11

    A series of heteroleptic functional Ir(III) complexes bearing different fluorinated aromatic sulfonyl groups has been synthesized. Their photophysical features, electrochemical behaviors, and electroluminescent (EL) properties have been characterized in detail. These complexes emit intense yellow phosphorescence with exceptionally high quantum yields (ΦP > 0.9) at room temperature, and the emission maxima of these complexes can be finely tuned depending upon the number of the fluorine substituents on the pendant phenyl ring of the sulfonyl group. Furthermore, the electrochemical properties and electron injection/transporting (EI/ET) abilities of these Ir(III) phosphors can also be effectively tuned by the fluorinated aromatic sulfonyl group to furnish some desired characters for enhancing the EL performance. Hence, the maximum luminance efficiency (ηL) of 81.2 cd A(-1), corresponding to power efficiency (ηP) of 64.5 lm W(-1) and external quantum efficiency (ηext) of 19.3%, has been achieved, indicating the great potential of these novel phosphors in the field of organic light-emitting diodes (OLEDs). Furthermore, a clear picture has been drawn for the relationship between their optoelectronic properties and chemical structures. These results should provide important information for developing highly efficient phosphors.

  18. Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

    Science.gov (United States)

    Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

    2000-09-01

    A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

  19. X-ray diffractometer configurations for thin film analysis

    Energy Technology Data Exchange (ETDEWEB)

    Haase, A. [Rich. Seifert and Co., Analytical X-ray Systems, Ahrensburg (Germany)

    1996-09-01

    A presentation of various configurations of focusing Seemann-Bohlin diffractometer, parafocusing Bragg-Brentano diffractometer and parallel beam are demonstrated. Equipped with different thin film attachments a comparison to conventional measurements are given. The application of different detector types like scintillation, gas proportional, electroluminescence (LUX) and solid state are described. Typical instrument set-ups for reflectometry, grazing incidence diffraction, total reflection, high resolution X-ray diffraction are explained. Different elements like slits, soller slits, pinhole collimators, crystal monochromators, monofiber (FOX) and polycapillaries (multifiber lens, Kumakhov lens`), flat or curved multilayer with constant or variable d-spacing, and their combinations are presented. The comparison of different beam conditioners in peak-to-background ratios are given. Wavelength dispersive scans show the energy discrimination possibilities of different beam optics.

  20. Optical Characterization of Different Thin Film Module Technologies

    Directory of Open Access Journals (Sweden)

    R. Ebner

    2015-01-01

    Full Text Available For a complete quality control of different thin film module technologies (a-Si, CdTe, and CIS a combination of fast and nondestructive methods was investigated. Camera-based measurements, such as electroluminescence (EL, photoluminescence (PL, and infrared (IR technologies, offer excellent possibilities for determining production failures or defects in solar modules which cannot be detected by means of standard power measurements. These types of optical measurement provide high resolution images with a two-dimensional distribution of the characteristic features of PV modules. This paper focuses on quality control and characterization using EL, PL, and IR imaging with conventional cameras and an alternative excitation source for the PL-setup.

  1. Synthesis and Electroluminescence Property of New Hexaphenyl Benzene Derivatives Including Emitting Core for OLED.

    Science.gov (United States)

    Shin, Hwangyu; Kang, Hyeonmi; Kim, Jong-Hyung; Wang, Yun-Fan; Kim, Seungho; Kay, Kwang-Yol; Park, Jongwook

    2015-10-01

    Three new emitting compounds of 5P-2TPA, 5P-2An and 5P-2Py for OLED based on hexaphenyl benzene moiety were synthesized. Physical properties were systematically examined by the change of the substitution groups of the synthesized materials. Photoluminescence (PL) spectrum of the synthesized materials showed maximum emitting wavelengths of about 437~488 nm in solution state and 457~516 nm in film state, indicating blue emission color. OLED devices were fabricated by the synthesized compounds using vacuum deposition process as an emitting layer. Device structure was ITO/2-TNATA 60 nm/NPB 15 nm/EML 35 nm/TPBi 20 nm/LiF 1 nm/Al 200 nm. External quantum efficiencies and CIE values of 5P-2TPA, 5P-2An and 5P-2Py were 3.34, 1.06 and 2.06% and (0.14, 0.12), (0.23, 0.45) and (0.24, 0.45), respectively. The three compounds exhibited thermal stablility with high Td of 426 °C, 449 °C and 467 °C.

  2. Enabling Lambertian-Like Warm White Organic Light-Emitting Diodes with a Yellow Phosphor Embedded Flexible Film

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Chen

    2014-01-01

    Full Text Available We demonstrate in this report a new constructive method of fabricating white organic light-emitting devices (OLEDs with a flexible plastic film embedded with yellow phosphor. The flexible film is composed of polydimethylsiloxane (PDMS and fabricated by using spin coating followed by peeling technology. From the results, the resultant electroluminescent spectrum shows the white OLED to have chromatic coordinates of 0.38 and 0.54 and correlated color temperature of 4200 K. The warm white OLED exhibits the yield of 10.3 cd/A and the luminous power efficiency of 5.4 lm/W at a luminance of 1000 cd/m2. A desirable Lambertian-like far-field pattern is detected from the white OLEDs with the yellow phosphor containing PDMS film. This method is simple, reproducible, and cost-effective, proving to be a highly feasible approach to realize white OLED.

  3. Spectra of surface plasmon polariton enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hickmott, T. W. [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)

    2015-03-07

    Narrow band-pass filters have been used to measure the spectral distribution of electroluminescent photons with energies between 1.8 eV and 3.0 eV from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. Electroforming of metal-insulator-metal (MIM) diodes is a non-destructive dielectric breakdown that results in a conducting channel in the insulator and changes the initial high resistance of the MIM diode to a low resistance state. It is a critical step in the development of resistive-switching memories that utilize MIM diodes as the active element. Electroforming of Al-Al{sub 2}O{sub 3}-Ag diodes in vacuum results in voltage-controlled negative resistance (VCNR) in the current-voltage (I-V) characteristics. Electroluminescence (EL) and electron emission into vacuum (EM) develop simultaneously with the current increase that results in VCNR in the I-V characteristics. EL is due to recombination of electrons injected at the Al-Al{sub 2}O{sub 3} interface with radiative defect centers in Al{sub 2}O{sub 3}. Measurements of EL photons between 1.8 eV and 3.0 eV using a wide band-pass filter showed that EL intensity is exponentially dependent on Al{sub 2}O{sub 3} thickness for Al-Al{sub 2}O{sub 3}-Ag diodes between 12 nm and 20 nm thick. Enhanced El intensity in the thinnest diodes is attributed to an increase in the spontaneous emission rate of recombination centers due to high electromagnetic fields generated in Al{sub 2}O{sub 3} when EL photons interact with electrons in Ag or Al to form surface plasmon polaritons at the Al{sub 2}O{sub 3}-Ag or Al{sub 2}O{sub 3}-Al interface. El intensity is a maximum at 2.0–2.2 eV for Al-Al{sub 2}O{sub 3}-Ag diodes with Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. EL in diodes with 12 nm or 14 nm of Al{sub 2}O{sub 3} is enhanced by factors of 8–10 over EL from a diode with 18 nm of Al{sub 2}O{sub 3}. The extent of EL enhancement in

  4. Discrimination between spin-dependent charge transport and spin-dependent recombination in π-conjugated polymers by correlated current and electroluminescence-detected magnetic resonance

    Science.gov (United States)

    Kavand, Marzieh; Baird, Douglas; van Schooten, Kipp; Malissa, Hans; Lupton, John M.; Boehme, Christoph

    2016-08-01

    Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is not straightforward to differentiate between pure single-carrier spin-dependent transport processes which control the current and therefore the electroluminescence, and spin-dependent electron-hole recombination which determines the electroluminescence yield and in turn modulates the current. We therefore investigate the correlation between the dynamics of spin-dependent electric current and spin-dependent electroluminescence in two derivatives of the conjugated polymer poly(phenylene-vinylene) using simultaneously measured pulsed electrically detected (pEDMR) and optically detected (pODMR) magnetic resonance spectroscopy. This experimental approach requires careful analysis of the transient response functions under optical and electrical detection. At room temperature and under bipolar charge-carrier injection conditions, a correlation of the pEDMR and the pODMR signals is observed, consistent with the hypothesis that the recombination currents involve spin-dependent electronic transitions. This observation is inconsistent with the hypothesis that these signals are caused by spin-dependent charge-carrier transport. These results therefore provide no evidence that supports earlier claims that spin-dependent transport plays a role for room-temperature magnetoresistance effects. At low temperatures, however, the correlation between pEDMR and pODMR is weakened, demonstrating that more than one spin-dependent process influences the optoelectronic materials' properties. This conclusion is consistent with prior studies of half-field resonances that were attributed to spin-dependent triplet exciton recombination, which becomes significant at low temperatures when the triplet lifetime increases.

  5. Efficient Deep-Blue Electroluminescence Based on Phenanthroimidazole-Dibenzothiophene Derivatives with Different Oxidation States of the Sulfur Atom.

    Science.gov (United States)

    Tang, Xiangyang; Shan, Tong; Bai, Qing; Ma, Hongwei; He, Xin; Lu, Ping

    2017-03-02

    Developing efficient deep-blue materials is a long-term research focus in the field of organic light-emitting diodes (OLEDs). In this paper, we report two deep-blue molecules, PITO and PISF, which share similar chemical structures but exhibit different photophysical and device properties. These two molecules consist of phenanthroimidazole and dibenzothiophene analogs. The distinction of their chemical structures lies in the different oxidation states of the S atom. For PITO, the S atom is oxidized and the resulting structure dibenzothiophene S,S-dioxide becomes electron deficient. Therefore, PITO displays remarkable solvatochromism, implying a charge-transfer (CT) excited state formed between the donor (D) phenanthroimidazole and acceptor (A) dibenzothiophene S,S-dioxide. For PISF, it is constituted of phenanthroimidazole and dibenzothiophene in which the S atom is not oxidized. PISF displays locally excited (LE) emission with little solvatochromism. Compared with PISF, the D-A molecule PITO with an electron-deficient group shows a much lower LUMO energy level, which is in favor of electron injection in device. In addition, PITO exhibits more balanced carrier transport. However, PISF is capable of emitting in the shorter wavelength region, which is beneficial to obtain better color purity. The doped electroluminescence (EL) device of the D-A molecule PITO manifests deep-blue emission with CIE coordinates of (0.15, 0.08) and maximum external quantum efficiency (EQE) of 4.67 %. The doped EL device of the LE molecule PISF, however, reveals an even bluer emission with CIE coordinates of (0.15, 0.06) and a maximum EQE of 4.08 %.

  6. Syntheses, structures and luminescent properties of Sm (III) and Eu (III) chelates for organic electroluminescent device applications

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Y.J.; Wong, T.K.S.; Yan, Y.K.; Hu, X

    2003-08-25

    Samarium(III) and europium(III) complexes of the {beta}-diketone ligand (2-thienyl)trifluoroacetylacetone (HTTA) and triphenylphosphine oxide (TPPO) were prepared. The complexes, Sm(TTA){sub 2}(TPPO){sub 2}NO{sub 3} (1), Eu(TTA){sub 2}(TPPO){sub 2}NO{sub 3}H{sub 2}O (2), and Eu(TTA){sub 3}(TPPO){sub 2} (3) were characterized. Single crystal X-ray diffraction molecular structures of complexes 1 and 3 are presented and some of the crystal parameters for complex 1 are: space group, P1; a=11.019(4) A, b=11.791(6) A, c=12.535(5) A; {alpha}=102.68(3) deg., {beta}=102.06(3) deg., {gamma}=117.75(3) deg. ; for complex 3: space group, P-1, a=11.1946(9) A, b=12.117(2) A, c=23.535(2) A, {alpha}=80.047(13) deg., {beta}=76.498(7) deg., {gamma}=70.450(9) deg. . Electroluminescent devices were fabricated by vacuum evaporation. Apart from single layer devices, double and triple layer devices with the following structures: ITO/TPD/Complex 2/Al; ITO/TPD/Complex 3/Al; ITO/TPD/Complex 2/Alq/Al were studied, where N,N-bis(3-methylphenyl)-N,N'-diphenyl-benzidine (TPD) was used as a hole transporting layer and tris(8-hydroxyquinolinate)aluminum (Alq) as an electron transporting layer. The results indicate that single layer devices show very low quantum efficiency, while the double layer devices with a hole transporting layer exhibit enhanced efficiency and a well defined EL spectrum. No significant improvement was observed in the triple layer devices with an additional electron transporting layer.

  7. Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

    Science.gov (United States)

    David, Aurelien; Hurni, Christophe A.; Young, Nathan G.; Craven, Michael D.

    2016-08-01

    The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

  8. Synthesis, characterization, photoluminescence and electroluminescence properties of new 1,3,4-oxadiazole-containing rhenium(Ⅰ)complex Re(CO)3(Bphen)(PTOP)

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new 1,3,4-oxadiazole-contanining rhenium(Ⅰ) complex, with the formula [Re(CO)3(Bphen)(PTOP)], (Bphen = bathophenardine, PTOP = 4-(5-p-tolyl-1, 3, 4-oxadiazd-2-yl) pyridine), is synthesized and characterized by elemental analysis, IR, 1H NMR,UV-vis and luminescence spectroscopy. The double-layer electroluminescence devices based on the Re(Ⅰ) complex have been fabricated by spin-coating technique. The turn-on voltage, maximum efficiency, and brightness for green emission obtained from the devices are 9 V, 2.1 cd/A and 165 cd/m2, respectively.

  9. Electroluminescence of a Multi-Layered Organic Light-Emitting Diode Utilizing Trans-4-[p-[Nmethyl-N-(hydroxymethyl)amino]styryl]-N-Methylphridinium Tetraphenylborate as the Active Layer

    Institute of Scientific and Technical Information of China (English)

    FENG Xue-Yuan; ZHANG Jia-Yu; XU Chun-Xiang; QIAO Yi; GUI Yi-Ping

    2006-01-01

    Employing an organic dye salt oftrans-4-[p-[N-methyl-N-(hydroxymethyl)amino]styryl]-N-methylphridinium tetraphenylborate (ASPT) as the active layer, 8-hydrocyquinoline aluminium (Alqa) as the electron transporting layer and N,Nt-diphenyl-N,Nl-bis(3-methylphenyl)-[l,l'-biphenyl]-4,4'-diamine (TPD) as the hole transporting layer, respectively, we fabricate a multi-layered organic light-emitting diode and observe the colour tunable electroluminescence (EL). The dependence of the EL spectra on the applied voltage is investigated in detail, and the recombination mechanism is discussed by considering the variation of the hole-electron recombination region.

  10. Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer

    Science.gov (United States)

    Illarionov, Yu. Yu.; Vexler, M. I.; Isakov, D.; Fedorov, V. V.; Sing, Yew Kwang

    2013-10-01

    A technique for diagnostics of the injection properties of thin dielectric layers based on analysis of the data on silicon electroluminescence in a metal-insulator-semiconductor structure is proposed. The possibility of applying this technique to control the electron injection energy (in particular, when the barrier parameters are poorly known) is demonstrated by the example of samples with CaF2 and HfO2/SiO2. The results obtained are important for application of the insulators under study in microelectronic devices.

  11. Synthesis, photophysics, electrochemistry, thermal stability and electroluminescent performances of a new europium complex with bis(β-diketone) ligand containing carbazole group.

    Science.gov (United States)

    Liu, Jian; Liang, Quan-Bin; Wu, Hong-Bin

    2016-09-07

    We synthesized a new europium complex [Eu(ecbpd)3 (Phen)] with bis(β-diketone) ligand containing a carbazole group, in which ecbpd and Phen are dehydro-3,3'-(9-ethyl-9H-carbazole-3,6-diyl)bis(1-phenylpropane-1,3-dione) and 1,10-phenanthroline, respectively. Its UV/vis and photoluminescent spectra, quantum yield, luminescence lifetime, electrochemistry, thermal stability and electroluminescent performances were studied. This europium complex showed low efficiency luminescence, which is probably due to the mismatching energy levels of its ligand and Eu(3)(+) , as well as the double Eu(3)(+) core resonance.

  12. High-performance perovskite light-emitting diodes via morphological control of perovskite films.

    Science.gov (United States)

    Yu, Jae Choul; Kim, Da Bin; Jung, Eui Dae; Lee, Bo Ram; Song, Myoung Hoon

    2016-04-07

    Solution-processable perovskite materials have garnered tremendous attention because of their excellent charge carrier mobility, possibility of a tunable optical bandgap, and high photoluminescence quantum efficiency (PLQE). In particular, the uniform morphology of a perovskite film is the most important factor in realizing perovskite light-emitting diodes (PeLEDs) with high efficiency and full-coverage electroluminescence (EL). In this study, we demonstrate highly efficient PeLEDs that contain a perovskite film with a uniform morphology by introducing HBr into the perovskite precursor. The introduction of HBr into the perovskite precursor results in a perovskite film with a uniform, continuous morphology because the HBr increases the solubility of the inorganic component in the perovskite precursor and reduces the crystallization rate of the perovskite film upon spin-coating. Moreover, PeLEDs fabricated using perovskite films with a uniform, continuous morphology, which were deposited using 6 vol% HBr in a dimethylformamide (DMF)/hydrobromic acid (HBr) cosolvent, exhibited full coverage of the green EL emission. Finally, the optimized PeLEDs fabricated with perovskite films deposited using the DMF/HBr cosolvent exhibited a maximum luminance of 3490 cd m(-2) (at 4.3 V) and a luminous efficiency of 0.43 cd A(-1) (at 4.3 V).

  13. Dispersion-model-free determination of optical constants: application to materials for organic thin film devices.

    Science.gov (United States)

    Flämmich, Michael; Danz, Norbert; Michaelis, Dirk; Bräuer, Andreas; Gather, Malte C; Kremer, Jonas H-W M; Meerholz, Klaus

    2009-03-10

    We describe a method to determine the refractive index and extinction coefficient of thin film materials without prior knowledge of the film thickness and without the assumption of a dispersion model. A straightforward back calculation to the optical parameters can be performed starting from simple measurements of reflection and transmission spectra of a 100-250 nm thick supported film. The exact film thickness is found simultaneously by fulfilling the intrinsic demand of continuity of the refractive index as a function of wavelength. If both the layer and the substrate are homogeneous and isotropic media with plane and parallel interfaces, effects like surface roughness, scattering, or thickness inhomogeneities can be neglected. Then, the accuracy of the measurement is approximately 10(-2) and 10(-3) for the refractive index and the extinction coefficient, respectively. The error of the thin film thickness determination is well below 1 nm. Thus this technique is well suited to determine the input parameters for optical simulations of organic thin film devices, such as organic light-emitting diodes (OLEDs) or organic photovoltaic (OPV) cells. We apply the method to the electroluminescent polymer poly(2,5-dioctyl-p-phenylene vinylene) (PDO-PPV) and show its applicability by comparing the measured and calculated reflection and transmission spectra of OLED stacks with up to five layers.

  14. Impact of Aggregation on the Photochemistry of Fullerene Films: Correlating Stability to Triplet Exciton Kinetics.

    Science.gov (United States)

    Speller, Emily M; McGettrick, James D; Rice, Beth; Telford, Andrew M; Lee, Harrison K H; Tan, Ching-Hong; De Castro, Catherine S; Davies, Matthew L; Watson, Trystan M; Nelson, Jenny; Durrant, James R; Li, Zhe; Tsoi, Wing C

    2017-07-12

    The photochemistry and stability of fullerene films is found to be strongly dependent upon film nanomorphology. In particular, PC61BM blend films, dispersed with polystyrene, are found to be more susceptible to photobleaching in air than the more aggregated neat films. This enhanced photobleaching correlated with increased oxygen quenching of PC61BM triplet states and the appearance of a carbonyl FTIR absorption band indicative of fullerene oxidation, suggesting PC61BM photo-oxidation is primarily due to triplet-mediated singlet oxygen generation. PC61BM films were observed to undergo photo-oxidation in air for even modest (≤40 min) irradiation times, degrading electron mobility substantially, indicative of electron trap formation. This conclusion is supported by observation of red shifts in photo- and electro-luminescence with photo-oxidation, shown to be in agreement with time-dependent density functional theory calculations of defect generation. These results provide important implications on the environmental stability of PC61BM-based films and devices.

  15. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  16. Photo- and electroluminescent properties of bithiophene disubstituted 1,3,4-thiadiazoles and their application as active components in organic light emitting diodes

    Science.gov (United States)

    Grykien, Remigiusz; Luszczynska, Beata; Glowacki, Ireneusz; Kurach, Ewa; Rybakiewicz, Renata; Kotwica, Kamil; Zagorska, Malgorzata; Pron, Adam; Tassini, Paolo; Maglione, Maria Grazia; Mauro, Anna De Girolamo Del; Fasolino, Tommaso; Rega, Romina; Pandolfi, Giuseppe; Minarini, Carla; Aprano, Salvatore

    2014-11-01

    Photo- and electroluminescence of five bithiophene disubstituted 1,3,4-thiadiazoles, constituting a new class of solution processable materials for organic opto-electronics, were studied. It was found that the introduction of alkyl solubilizing substituents bathochromically shifted the photo- and electroluminescence bands. The most pronounced effect was observed for the substitution at the Cα position which changed the emitting light color from bluish to green. All five derivatives were tested in host/guest type organic light emitting diodes (OLEDs) with either poly(N-vinylcarbazole) (PVK) or poly(N-vinylcarbazole) + 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PVK + PBD) matrices. The latter matrix turned out especially well suited for these guest molecules yielding devices of varying color coordinates. The best luminance (750 cd/m2) was measured for 2,5-bis(5‧-octyl-2,2‧-bithiophene-5-yl)-1,3,4-thiadiazole with the luminous efficiency exceeding 0.4 cd/A.

  17. Electrical and electroluminescent characterization of nanometric multilayers of SiOX/SiOY obtained by LPCVD including non-normal emission

    Science.gov (United States)

    Alarcón-Salazar, J.; Zaldívar-Huerta, I. E.; Aceves-Mijares, M.

    2016-06-01

    This work describes the analysis and fabrication by Low Pressure Chemical Vapor Deposition of two light-emitting capacitors (LECs) constituted by nanometric multilayers of silicon-rich oxide. For both structures, seven layers were used: three light emitting layers with 6% silicon excess and four conductive layers with 12% silicon excess for one LEC and the other with 14% silicon excess. Both LECs were annealed at 1100 °C. Both multilayers demonstrate a substantially improved photoluminescent response compared to single emitting layers. A dielectric constant of 4.1 and a trap density of 1016 cm-3 were obtained from capacitance-voltage curves. Analysis of current-voltage and electroluminescence-voltage (EL-V) characteristics indicates that EL initiates under the space-charge-limited current mechanism, and the required voltage to turn on the emission is 38 V which is the trap-free limit voltage. However, EL increases exponentially under the impact ionization and trap-assisted tunneling conduction mechanisms. The electroluminescence spectra for both multilayers show two emission peaks centered in 450 and 700 nm attributed to oxygen defects. Also, the LEC non-normal emission was measured and it behaves like a Lambertian optical source. Both multilayers obtain the values of efficiency in the order of 10-6 which is in good agreement with the values reported in the literature.

  18. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    Energy Technology Data Exchange (ETDEWEB)

    Calciati, Marco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); Goano, Michele, E-mail: michele.goano@polito.it; Bertazzi, Francesco [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); IEIIT-CNR, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico [Dipartimento di Ingegneria dell' Informazione, Università di Padova, Via Gradenigo 6/B, 35131 Padova (Italy); Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary' s Street, 02215 Boston, MA (United States); Verzellesi, Giovanni [Dipartimento di Scienze e Metodi dell' Ingegneria, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-06-15

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary

  19. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    Science.gov (United States)

    Calciati, Marco; Goano, Michele; Bertazzi, Francesco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Bellotti, Enrico; Verzellesi, Giovanni; Zhu, Dandan; Humphreys, Colin

    2014-06-01

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10-30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at

  20. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    Directory of Open Access Journals (Sweden)

    Marco Calciati

    2014-06-01

    Full Text Available Electroluminescence (EL characterization of InGaN/GaN light-emitting diodes (LEDs, coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs. First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i the approximations in the transport description through the multi-quantum-well active region, (ii the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10−30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary

  1. Synthesis, characterization, and photophysical and electroluminescent properties of blue-emitting cationic iridium(III) complexes bearing nonconjugated ligands.

    Science.gov (United States)

    Zhang, Fuli; Ma, Dongxin; Duan, Lian; Qiao, Juan; Dong, Guifang; Wang, Liduo; Qiu, Yong

    2014-07-07

    -type ancillary ligands, where emission originates from the cyclometalated main ligands. Solution-processed organic light-emitting diodes based on complexes 1 and 2 gave blue-green (498 nm) and blue (478 nm) electroluminescence with maximum current efficiencies of 3.8 and 3.4 cd A(-1), respectively. The results indicate that introducing nonconjugated ligands into cationic iridium complexes is an effective means of achieving short-wavelength light-emitting phosphors.

  2. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  3. Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

    Science.gov (United States)

    Peng, Jing; Wu, Chuan-Ju; Sun, Tang-You; Zhao, Wen-Ning; Wu, Xiao-Feng; Liu, Wen; Wang, Shuang-Bao; Jie, Quan-Lin; Xu, Zhi-Mou

    2012-06-01

    BaTiO3 (BTO) ferroelectric thin films are prepared by the sol-gel method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroelectric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectric thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 °C-400 °C). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.

  4. Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

    Institute of Scientific and Technical Information of China (English)

    Peng Jing; Wu Chuan-Ju; Sun Tang-You; Zhao Wen-Ning; Wu Xiao-Feng; Liu Wen; Wang Shuang-Bao; Jie Quan-Lin; Xu Zhi-Mou

    2012-01-01

    BaTiO3 (BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 ℃-400 ℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.

  5. Light-emitting diode applications of colloidal CdSe/ZnS quantum dots embedded in TiO{sub 2-{delta}} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Seung-Hee; Huh, Hoon-Hoe; Son, Kee-Chul; Kim, Eui-Tae [Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Daejeon (Korea); Lee, Chang-Soo [Department of Chemical Engineering, Chungnam National University, Daeduk Science Town, Daejeon (Korea); Kim, Kyung-Hyun; Huh, Chul [Electronics and Telecommunications Research Institute, Daeduk Science Town, Daejeon (Korea)

    2009-04-15

    We report the light-emitting diode (LED) characteristics of colloidal core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in TiO{sub 2-{delta}} thin films on Si substrate. High-quality CdSe/ZnS QDs were synthesized via a pyrolysis in the range of 220-280 C. The QDs were embedded in TiO{sub 2-{delta}} thin film at 200 C by plasma-enhanced metallorganic chemical vapor deposition. The diode structure of n-TiO{sub 2-{delta}}/QDs/p-Si showed electroluminescence characteristics, indicating the possibility of LED applications of colloidal CdSe/ZnS nanocrystal QDs embedded in oxide films on large-area Si wafer. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Demens Film

    DEFF Research Database (Denmark)

    Ridder, Hanne Mette Ochsner

    2012-01-01

    I forbindelse med opstarten af Demens Film projektet har der været nedsat en ekspertgruppe, som er kommet med en række anbefalinger omkring film til mennesker med demens. Anbefalingerne skal bruges i de næste faser af projektet. Deltagerne i ekspertgruppen var sammensat af en bred gruppe...... fagpersoner inde for forskellige fagområder. Læs mere om gruppens anbefalinger og sammensætning af ekspertgruppen i den kort rapport som er offentlig tilgængelig. Læs Ekspertgruppe anbefalingerne til Demens Film projekt....

  7. Studies on influence of light on fluorescence of Tris-(8-hydroxyquinoline)aluminum thin films

    Science.gov (United States)

    Thangaraju, K.; Amaladass, P.; Bharathi, K. Shanmuga; Mohanakrishnan, A. K.; Narayanan, V.; Kumar, J.

    2009-03-01

    Tris-(8-hydroxyquinoline)aluminum (Alq 3) thin films, the most widely used electron transport/emissive material in the organic electroluminescent (EL) devices, have been deposited on glass substrates by thermal evaporation process. Alq 3 thin films were exposed to light for various time periods under normal ambient. The fluorescence of as-prepared and light exposed Alq 3 thin films and formation of luminescent quencher have been studied using fluorescence, Mass, MALDI-ToF-MS, 1H & 13C NMR, and FT-IR spectroscopy. It is observed that among the three 8-hydroxyquinoline (HQ) units in Alq 3 molecule, one HQ unit is affected during the light exposure in the normal ambient. It is found that the affected resultant Alq 3 molecule containing the carbonyl group acts as fluorescent quencher and the energy of excitons in the Alq 3 molecule in the light exposed Alq 3 thin films can be non-radiatively transferred to the neighboring fluorescent quencher, quenching the fluorescence of light exposed Alq 3 thin films in the normal ambient.

  8. Piezoelectric Film.

    Science.gov (United States)

    Garrison, Steve

    1992-01-01

    Presents activities that utilize piezoelectric film to familiarize students with fundamental principles of electricity. Describes classroom projects involving chemical sensors, microbalances, microphones, switches, infrared sensors, and power generation. (MDH)

  9. Polymer films

    Science.gov (United States)

    Granick, Steve; Sukhishvili, Svetlana A.

    2004-05-25

    A film contains a first polymer having a plurality of hydrogen bond donating moieties, and a second polymer having a plurality of hydrogen bond accepting moieties. The second polymer is hydrogen bonded to the first polymer.

  10. Polymer films

    Science.gov (United States)

    Granick, Steve; Sukhishvili, Svetlana A.

    2008-12-30

    A film contains a first polymer having a plurality of hydrogen bond donating moieties, and a second polymer having a plurality of hydrogen bond accepting moieties. The second polymer is hydrogen bonded to the first polymer.

  11. Effect of solution combusted TiO2 nanopowder within commercial BaTiO3 dielectric layer on the photoelectric properties for AC powder electroluminescence devices.

    Science.gov (United States)

    Park, Sung; Choi, Gil Rak; Kim, Youn Cheol; Lee, Jae Chun; Lee, Ju Hyeon

    2013-05-01

    A unique synthesis method was developed, which is called solution combustion method (SCM). TiO2 nanopowder was synthesized by this method. This SCM TiO2 nanopowder (-35 nm) was added to the dielectric layer of AC powder electroluminescence (EL) device. The dielectric layer was made of commercial BaTiO3 powder (-1.2 microm) and binding polymer. 0, 5, 10 and 15 wt% of SCM TiO2 nanopowder was added to the dielectric layer during fabrication of AC powder EL device respectively. Dielectric constant of these four kinds of dielectric layers was measured. The brightness and current density of AC powder EL device were also measured. When 10 wt% of SCM TiO2 nanopowder was added, dielectric constant and brightness were increased by 30% and 101% respectively. Furthermore, the current density was decreased by 71%. This means that the brightness was double and the power consumption was one third.

  12. Electroluminescence from perovskite LEDs with the structure of Ag/Spiro-OMeTAD/CH3NH3PbI3/TiO2/FTO

    Science.gov (United States)

    Wang, Minhuan; Shi, Yantao; Bian, Jiming; Dong, Qingshun; Sun, Hongjun; Liu, Hongzhu; Luo, Yingmin; Zhang, Yuzhi

    2016-10-01

    The perovskite light-emitting diodes (Pe-LEDs) with the structure of Ag/Spiro-OMeTAD/CH3NH3PbI3/TiO2/FTO were synthesized, where the CH3NH3PbI3 perovskite layer was deposited by a two-step spin-coating process. A dominant near-infrared electroluminescence (EL) at 773 nm was detected from the Pe-LEDs under forward bias at room temperature. The origin and mechanism of the EL were discussed in comparison with the photoluminescence (PL) spectra, and it was attributed to the radiative recombination of electrons and holes confined in the CH3NH3PbI3 emissive layer. Moreover, the corresponding energy band diagrams was proposed to illustrate the carrier transport mechanism in the Pe-LED device.

  13. Electroluminescence from a forward-biased Schottky barrier diode on modulation Si {delta}-doped GaAs/InGaAs/AlGaAs heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Babinski, Adam; Witczak, P.; Twardowski, A.; Baranowski, J. M.

    2001-06-18

    Electroluminescence (EL) from a forward-biased Schottky barrier diode on modulation Si {delta}-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure with high mobility electron gas is investigated in this work. It has been found that the EL from the InGaAs quantum well can be observed at temperatures up to 90 K. The EL line shape depends on the current density, which reflects the filling of the InGaAs channel with electrons. The total integrated EL intensity depends linearly on the current density. We propose that hole diffusion from an inversion layer at the Schottky barrier is responsible for the observed optical recombination with electrons in the InGaAs quantum well. {copyright} 2001 American Institute of Physics.

  14. Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum

    Science.gov (United States)

    Reum Lee, Ah; Jeon, Hunsoo; Lee, Gang-Seok; Ok, Jin-Eun; Jo, Dong-Wan; Kim, Kyoung Hwa; Yi, Sam Nyung; Yang, Min; Ahn, Hyung Soo; Cho, Chae-Ryong; Kim, Suok-Whan; Lee, Jae-Hak; Ha, Hong-Ju

    2011-01-01

    We report the characterization of the InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) grown on a patterned sapphire substrate by metal organic chemical vapor deposition (MOCVD) using the selective area growth (SAG) method. The SAG patterns were designed to be circular and their diameters were 700 and 200 µm. After the growth, the InGaN/GaN MQW LED of 200 µm diameter had various crystal facets and a shape similar to volcanic craters, which were not observed in the 700-µm-diameter sample. We obtained an active layer with compositional nonuniformity and superior optical properties. We found wide electroluminescence (EL) spectral peaks near 470, 570, and 600 nm. The distribution of the EL spectrum of the sample was similar to that of a conventional phosphor-converted white LED.

  15. Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

    Science.gov (United States)

    Hofstetter, Daniel; Bour, David P.; Kirste, Lutz

    2014-06-01

    We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58 meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm-1 (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.

  16. Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

    Energy Technology Data Exchange (ETDEWEB)

    Hofstetter, Daniel, E-mail: Daniel.Hofstetter@unine.ch [University of Neuchâtel, Institute of Physics, 51 Avenue de Bellevaux, Neuchâtel, CH–2009 (Switzerland); Bour, David P. [Avogy, Inc., 677 River Oaks Parkway, San Jose, California 95134 (United States); Kirste, Lutz [Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, D-79108 Freiburg i. Brsg. (Germany)

    2014-06-16

    We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58 meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm{sup −1} (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.

  17. Thermal resistanse and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes

    Directory of Open Access Journals (Sweden)

    A.V. Aladov

    2015-06-01

    Full Text Available The paper studies current spreading, light emission, and heat transfer in high-power flip-chip light-emitting diodes (LEDs and their effect on the chip thermal resistance by experimental and theoretical approaches. The thermal resistance was measured using two methods: by monitoring the transient response of the LED operation voltage to the temperature variation with the Transient Tester T3Ster and by temperature mapping with the use of an infrared thermal-imaging microscope. The near field of the electroluminescence intensity was recorded with an optical microscope and a CCD camera. Three-dimensional numerical simulation of the current spreading and heat transfer in the LED chip was carried out using the SimuLED package in order to interpret the obtained experimental results.

  18. High-performance alternating current field-induced chromatic-stable white polymer electroluminescent devices employing a down-conversion layer

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Yingdong; Chen, Yonghua; Smith, Gregory M. [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States); Sun, Hengda; Yang, Dezhi [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Nie, Wanyi; Li, Yuan; Huang, Wenxiao [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States); Ma, Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Carroll, David L., E-mail: carroldl@wfu.edu [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States)

    2015-05-15

    In this work, a high-performance alternating current (AC) filed-induced chromatic-stable white polymer electroluminescence (WFIPEL) device was fabricated by combining a fluorophor Poly(9,9-dioctylfluorene) (PFO)-based blue device with a yellow down-conversion layer (YAG:Ce). A maximum luminance of this down-conversion FIPEL device achieves 3230 cd m{sup −2}, which is 1.41 times higher than the device without the down-conversion layer. A maximum current efficiency and power efficiency of the down-conversion WFIPEL device reach 19.7 cd A{sup −1} at 3050 cd m{sup −2} and 5.37 lm W{sup −1} at 2310 cd m{sup −2} respectively. To the best of our knowledge, the power efficiency is one of the highest reports for the WFIPEL up to now. Moreover, Commison Internationale de L’Eclairage (CIE) coordinates of (0.28, 0.30) is obtained by adjusting the thickness of the down-conversion layer to 30 μm and it is kept stable over the entire AC-driven voltage range. We believe that this AC-driven, down-conversion, WFIPEL device may offer an easy way towards future flat and flexible lighting sources. - Highlights: • A high-performance AC filed-induced chromatic-stable white polymer electroluminescence (WFIPEL) device was fabricated. • A maximum luminance, current efficiency, and power efficiency achieves 3230 cd m{sup −2}, 19.7 cd A{sup −1}, and 5.37 lm W{sup −1}, respectively. • The power efficiency is one of the highest reports for the WFIPEL up to now. • The EL spectrum kept very stable over the entire AC-driven voltage range.

  19. Multilevel organization in hybrid thin films for optoelectronic applications.

    Science.gov (United States)

    Vohra, Varun; Bolognesi, Alberto; Calzaferri, Gion; Botta, Chiara

    2009-10-20

    In this work we report two simple approaches to prepare hybrid thin films displaying a high concentration of zeolite crystals that could be used as active layers in optoelectronic devices. In the first approach, in order to organize nanodimensional zeolite crystals of 40 nm diameter in an electroactive environment, we chemically modify their external surface and play on the hydrophilic/hydrophobic forces. We obtain inorganic nanocrystals that self-organize in honeycomb electroluminescent polymer structures obtained by breath figure formation. The different functionalizations of the zeolite surface result in different organizations inside the cavities of the polymeric structure. The second approach involving soft-litography techniques allows one to arrange single dye-loaded zeolite L crystals of 800 nm of length by mechanical loading into the nanocavities of a conjugated polymer. Both techniques result in the formation of thin hybrid films displaying three levels of organization: organization of the dye molecules inside the zeolite nanochannels, organization of the zeolite crystals inside the polymer cavities, and micro- or nanostructuration of the polymer.

  20. Organic Film Photovoltaic Cells with Gadolinium Complex as an Electron Acceptor

    Institute of Scientific and Technical Information of China (English)

    范镝; 初蓓; 李文连; 洪自若

    2004-01-01

    A series of organic photovoltaic (PV) cells in which the electron acceptor and donor are gadolinium (dibenzoylmethanato)3(bathophenanthroline) [Gd(DBM)3bath] and N,N′-diphenyl-N,N′bis(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine [TPD], respectively, were fabricated. Although TPD acts as an active layer in the bilayered cells, insertion of a Gd-complex film between TPD and the alloy cathode is necessary for efficient carrier photogeneration. Open-circuit voltage of 3.2 V was obtained due to efficient exciton dissociation near the interface between Gd(DBM)3bath and TPD. By incorporating an ultrathin mixed layer of Gd-complex and TPD, external quantum efficiency is improved significantly. Photovoltaic performance of the devices has a common origin, exciplex formation, which results in broadband emission during both photoluminescent and the electroluminescent processes.

  1. Inkjet printing of flexible high-performance carbon nanotube transparent conductive films by ``coffee ring effect''

    Science.gov (United States)

    Shimoni, Allon; Azoubel, Suzanna; Magdassi, Shlomo

    2014-09-01

    Transparent and flexible conductors are a major component in many modern optoelectronic devices, such as touch screens for smart phones, displays, and solar cells. Carbon nanotubes (CNTs) offer a good alternative to commonly used conductive materials, such as metal oxides (e.g. ITO) for flexible electronics. The production of transparent conductive patterns, and arrays composed of connected CNT ``coffee rings'' on a flexible substrate poly(ethylene terephthalate), has been reported. Direct patterning is achieved by inkjet printing of an aqueous dispersion of CNTs, which self-assemble at the rim of evaporating droplets. After post-printing treatment with hot nitric acid, the obtained TCFs are characterized by a sheet resistance of 156 Ω sq-1 and transparency of 81% (at 600 nm), which are the best reported values obtained by inkjet printing of conductive CNTs. This makes such films very promising as transparent conductors for various electronic devices, as demonstrated by using an electroluminescent device.

  2. Blue and green organic light-emitting devices with various film thicknesses for color tuning

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Blue and green organic light-emitting devices with a structure of indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1 '-biphenyl-4,4'-diamine (NPB)/aluminum(Ⅲ) bis(2-methyl-8-quinolinato)4 -phenylphenolato (BAlq)/tris(8-hydroxyquinolate)-aluminum (Alq3)/Mg:Ag have been fabricated. Blue to green light emission has been achieved with the change of organic film thickness. Based on energy band diagram and charge carrier tunneling theory, it is concluded that the films of different thicknesses play a role as a color-tuning layer and the color-variable electroluminescence (EL) is ascribed to the modulation function within the charge carrier recombination zone. In the case of heterostructure devices with high performance, the observed EL spectra varies significantly with the thickness of organic films, which is resulted from the shift of recombination region site. It has not been hitherto indicated that the devices compose of identical components could be implemented to realize different color emission by changing the film thickness of functional layers.

  3. A New Distyrylarylene Derivative Used as Blue Light Emitter in Organic Electroluminescent Device%一种新型联苯乙烯衍生物--蓝色有机电致发光材料

    Institute of Scientific and Technical Information of China (English)

    郑新友; 朱文清; 吴有智; 张步新; 蒋雪茵; 张志林; 许少鸿

    2002-01-01

    A new blue electroluminescent material, distyrylarylene(DSA) derivative, 4,4'-bis[2,2-(1-naphthyl,phenyl)vinyl]-l,l'-biphenyl(NPVBi) is designed and synthesized. The DSA derivative shows better thermal stability because of its high glass transition temperature. A blue organic light emitting diode(OLED) with the structure ITO/TPD/NPVBi/Alq/LiF/A1 is studied. The electroluminescent(EL) spectrum of the OLED exhibits that light emission originates from NPVBi with a peak at 460 nm, its Commission Internationale de l' Eclairage(CIE) color coordinates are x = 0.16, y = 0.15, and showing independence of CIE color coordinates on current density. The new DSA derivative is expectable as a new candidate for blue light emitter in OLEDs.

  4. Film Credits

    Science.gov (United States)

    Borja, Rhea R.

    2006-01-01

    With the advent of easy-to-use digital technology, schools are responding to the interests of their media-savvy students by offering more courses in filmmaking. In this article, the author features different films produced by students. Among other things, she discusses the students' growing interest in filmmaking.

  5. Inverted tetrahedron-pyramidal micropatterned polymer films for boosting light output power in flip-chip light-emitting diodes.

    Science.gov (United States)

    Leem, Jung Woo; Lee, Soo Hyun; Guan, Xiang-Yu; Yu, Jae Su

    2015-04-20

    We report the improved light output power in gallium nitride-based green flip-chip light-emitting diodes (FCLEDs) employed with inverted tetrahedron-pyramidal micropatterned polydimethylsiloxane (ITPM PDMS) films as an encapsulation and protection layer. The micropatterns are transferred into the surface of PDMS films from the sapphire substrate master molds with two-dimensional periodic hexagonal TPM arrays by a soft imprint lithography method. The ITPM PDMS film laminated on the sapphire dramatically enhances the diffuse transmittance (T(D)) in a wavelength (λ) range of 400-650 nm, exhibiting the larger T(D) value of ~53% at λ = 525 nm, (cf., T(D) ~1% for planar sapphire). By introducing the ITPM PDMS film on the outer surface of sapphire in FCLEDs, the light output power is enhanced, indicating the increment percentage of ~11.1% at 500 mA of injection current compared to the reference FCLED without the ITPM PDMS film, together with better electroluminescence intensity and far-field radiation pattern.

  6. Band Gap Tuning of CH₃NH₃Pb(Br(1-x)Clx)₃ Hybrid Perovskite for Blue Electroluminescence.

    Science.gov (United States)

    Kumawat, Naresh K; Dey, Amrita; Kumar, Aravindh; Gopinathan, Sreelekha P; Narasimhan, K L; Kabra, Dinesh

    2015-06-24

    We report on the structural, morphological and optical properties of AB(Br(1-x)Cl(x))3 (where, A = CH3NH3(+), B = Pb(2+) and x = 0 to 1) perovskite semiconductor and their successful demonstration in green and blue emissive perovskite light emitting diodes at room temperature. The bandgap of perovskite thin film is tuned from 2.42 to 3.16 eV. The onset of optical absorption is dominated by excitonic effects. The coulomb field of the exciton influences the absorption at the band edge. Hence, it is necessary to explicitly account for the enhancement of the absorption through the Sommerfield factor. This enables us to correctly extract the exciton binding energy and the electronic bandgap. We also show that the lattice constant varies linearly with the fractional chlorine content satisfying Vegards law.

  7. Tunable electroluminescence from low-threshold voltage LED structure based on electrodeposited Zn{sub 1-x}Cd{sub x}O-nanorods/p-GaN heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Pauporte, T. [Laboratoire d' Electrochimie, Chimie des Interfaces et Modelisation pour l' Energie (LECIME), UMR 7575 CNRS, Chimie ParisTech, Paris (France); Lupan, O. [Laboratoire d' Electrochimie, Chimie des Interfaces et Modelisation pour l' Energie (LECIME), UMR 7575 CNRS, Chimie ParisTech, Paris (France); Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, Chisinau (Moldova); Viana, B. [Laboratoire de Chimie de la Matiere Condensee de Paris, UMR 7574-CNRS-Chimie ParisTech-UPMC, Paris (France)

    2012-02-15

    Violet light-emitting diode (LED) structures based on Cd-alloyed zinc oxide (Zn{sub 1-x}Cd{sub x}O) nanorods (NRs)/p-GaN heterojunction have been fabricated by epitaxial electrodeposition at low temperatures in an aqueous soft bath followed by a mild thermal annealing. The ultraviolet (UV) room-temperature emission peak at around 397 nm with a full width at half-maximum (FWHM) of 10 nm observed from pure ZnO-NRs/p-GaN at room temperature was shifted to 417 nm with FWHM of 14 nm by employing a Zn{sub 0.92}Cd{sub 0.08}O-NRs/p-GaN heterojunction. The emission threshold voltage was low at about 5.0 V and the electroluminescence (EL) intensity rapidly increased with the applied forward-bias voltage. The emission wavelength increased with the Cd content in the alloy. The EL physics mechanism in LED structures of the heterojunctions is discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect.

    Science.gov (United States)

    Liu, C; Dai, L; You, L P; Xu, W J; Qin, G G

    2008-11-19

    Single-crystalline n-type InP nanowires (NWs) with different electron concentrations were synthesized on Si substrates via the vapor phase transport method. The electrical properties of the InP nanowires were investigated by fabricating and measuring single NW field-effect transistors (FETs). Single InP NW/p(+)-Si heterojunctions were fabricated, and electroluminescence (EL) spectra from them were studied. It was found that both the photoluminescence (PL) spectra of the InP NWs and the EL spectra of the heterojunctions blueshift from 920 to 775 nm when the electron concentrations of the InP NWs increase from 2 × 10(17) to 1.4 × 10(19) cm(-3). The blueshifts can be attributed to the Burstein-Moss effect rather than the quantum confinement effect in the InP NWs. The large blueshifts observed in this study indicate a potential application of InP NWs in nano-multicolour displays.

  9. Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Li, K.H.; Wang, Q.; Nguyen, H.P.T.; Zhao, S.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec (Canada)

    2015-05-15

    The polarization properties of light emission from InGaN nanowire (NW) light-emitting diodes (LEDs) have been studied with the use of goniometric setup. A maximum polarization ratio of ∝0.7 has been obtained from the edge emission of NW array-based LEDs and the light is mainly polarized parallel to the c-axis of NWs. The nearly isotropic polarization response from a core-shell NW LED structure is also observed, and it is found that the degree of polarization is strongly depended on the NW diameter. With the growth of the AlGaN shell, the resulting diameter of core-shell NWs becomes larger and is comparable to the emission wavelength, thus weakening the optical confinement effect and the polarization behavior. The size-dependent polarization properties of NW structures are further verified by the finite-difference time-domain simulation. NWs with diameters much less than the emission wavelength render a strong contrast between the p- and s-polarized light emissions. (Left) FE-SEM image of MBE-grown NWs covered with polyimide. (Right) Plot of integrated electroluminescence intensity as a function of polarizer angle for a NW LED. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Significant improvement of near-UV electroluminescence from ZnO quantum dot LEDs via coupling with carbon nanodot surface plasmons.

    Science.gov (United States)

    Zhang, Cen; Zhu, Feifei; Xu, Haiyang; Liu, Weizhen; Yang, Liu; Wang, Zhongqiang; Ma, Jiangang; Kang, Zhenhui; Liu, Yichun

    2017-10-05

    Short-wavelength LEDs, a hot research topic in modern optoelectronics, have attracted tremendous attention in recent years because of their great application potential in both civil and military domains. Compared to conventional metallic surface-plasmons (SPs), carbon nanodot (CD) SPs with less optical loss and low cost, broader SP resonant frequency and good biocompatibility are expected to provide more prominent luminescence enhancement for light emitters. Herein, SP-enhanced near-UV emission quantum dot LEDs (Q-LED) were fabricated via introducing CDs into p-GaN/Al2O3/ZnO Q-LEDs by optimizing the molar ratio of ZnO quantum dots to CDs and a significant enhancement (∼20-fold) of the near-UV electroluminescence (EL) intensity from the ZnO-based Q-LEDs was achieved. Time-resolved spectroscopy studies reveal that the observed luminescence enhancement arises due to the resonant coupling between ZnO excitons and CD SPs. The current study not only demonstrates a feasible way to acquire near-UV emission from all-inorganic Q-LEDs, but also provides an effective strategy to enhance the EL intensity of these QD light emitters, which can further be extended to other types of light-emitting devices to improve EL efficiency.

  11. Synthesis, crystal structures and photo- and electro-luminescence of copper(I) complexes containing electron-transporting diaryl-1,3,4-oxadiazole.

    Science.gov (United States)

    Yu, Tianzhi; Liu, Peng; Chai, Haifang; Kang, Jundan; Zhao, Yuling; Zhang, Hui; Fan, Duowang

    2014-05-01

    Two mononuclear Cu(I) complexes based on 2-(2-pyridyl)benzimidazolyl derivative ligand containing electron-transporting 1,3,4-oxadiazole group (L), [Cu(L)(PPh(3))2](BF(4)) and [Cu(L)(DPEphos)](BF(4)), where L = 1-(4-(5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl)benzyl)-2-(pyridin-2-yl)benzimidazole and DPEphos = bis[2-(diphenylphosphino)phenyl]ether, have been successfully synthesized and characterized. The X-ray crystal structure analyses of the ligand L and the complex [Cu(L)(PPh(3))2](BF(4)) were described. The photophysical properties of the complexes were examined by using UV-vis, photoluminescence spectroscopic analysis. The doped light-emitting devices using the Cu(I) complexes as dopants were fabricated. With no electron transporting layers employed in the devices, yellow electroluminescence from Cu(I) complexes were observed. The devices based on the complex [Cu(L)(DPEphos)](BF4) possess better performance as compared with the devices fabricated by the complex [Cu(L)(PPh(3))2](BF(4)). The devices with the structure of ITO/MoO(3) (2 nm)/NPB (40 nm)/CBP:[Cu(L)(DPEphos)](BF(4)) (8 wt%, 30 nm)/BCP (30 nm)/LiF (1 nm)/Al (150 nm) exhibit a maximum efficiency of 3.04 cd/A and a maximum brightness of 4,758 cd/m(2).

  12. Near-intrinsic energy resolution for 30–662 keV gamma rays in a high pressure xenon electroluminescent TPC

    Energy Technology Data Exchange (ETDEWEB)

    Álvarez, V. [Instituto de Física Corpuscular (IFIC), CSIC and Universitat de València, Calle Catedrático José Beltrán, 2, 46980 Paterna, Valencia (Spain); Borges, F.I.G.M. [Departamento de Fisica, Universidade de Coimbra, Rua Larga, 3004-516 Coimbra (Portugal); Cárcel, S. [Instituto de Física Corpuscular (IFIC), CSIC and Universitat de València, Calle Catedrático José Beltrán, 2, 46980 Paterna, Valencia (Spain); Castel, J.; Cebrián, S. [Laboratorio de Física Nuclear y Astropartículas, Universidad de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza (Spain); Cervera, A. [Instituto de Física Corpuscular (IFIC), CSIC and Universitat de València, Calle Catedrático José Beltrán, 2, 46980 Paterna, Valencia (Spain); Conde, C.A.N. [Departamento de Fisica, Universidade de Coimbra, Rua Larga, 3004-516 Coimbra (Portugal); Dafni, T. [Laboratorio de Física Nuclear y Astropartículas, Universidad de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza (Spain); Dias, T.H.V.T. [Departamento de Fisica, Universidade de Coimbra, Rua Larga, 3004-516 Coimbra (Portugal); Díaz, J. [Instituto de Física Corpuscular (IFIC), CSIC and Universitat de València, Calle Catedrático José Beltrán, 2, 46980 Paterna, Valencia (Spain); and others

    2013-04-21

    We present the design, data and results from the NEXT prototype for Double Beta and Dark Matter (NEXT-DBDM) detector, a high-pressure gaseous natural xenon electroluminescent time projection chamber (TPC) that was built at the Lawrence Berkeley National Laboratory. It is a prototype of the planned NEXT-100 {sup 136}Xe neutrino-less double beta decay (0νββ) experiment with the main objectives of demonstrating near-intrinsic energy resolution at energies up to 662 keV and of optimizing the NEXT-100 detector design and operating parameters. Energy resolutions of ∼1% FWHM for 662 keV gamma rays were obtained at 10 and 15 atm and ∼5% FWHM for 30 keV fluorescence xenon X-rays. These results demonstrate that 0.5% FWHM resolutions for the 2459 keV hypothetical neutrino-less double beta decay peak are realizable. This energy resolution is a factor 7–20 better than that of the current leading 0νββ experiments using liquid xenon and thus represents a significant advancement. We present also first results from a track imaging system consisting of 64 silicon photo-multipliers recently installed in NEXT–DBDM that, along with the excellent energy resolution, demonstrates the key functionalities required for the NEXT-100 0νββ search.

  13. Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhao, De Gang, E-mail: dgzhao@red.semi.ac.cn; Jiang, De Sheng; Chen, Ping; Liu, Zong Shun; Zhu, Jian Jun; Li, Xiang; Shi, Ming; Zhao, Dan Mei [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, Jian Ping; Zhang, Shu Ming; Wang, Hui; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2015-11-15

    The electroluminescence (EL) spectra of blue–green light emitting InGaN/GaN multiple quantum well (MQW) structures grown via metal-organic chemical vapor deposition are investigated. With increasing In content in InGaN well layers, the peak energy redshifts, the emission intensity reduces and the inhomogeneous broadening of the luminescence band increases. In addition, it is found that the EL spectra shrink with increasing injection current at low excitation condition, which may be ascribed to both Coulomb screening of polarization field and carrier transferring from shallower localization states to the deeper ones, while at high currents the state-filling effect in all localization states may become significant and lead to a broadening of EL spectra. However, surprisingly, for the MQW sample with much higher In content, the EL spectral bandwidth can be almost unchanged with increasing current at the high current range, since a large number of carriers may be captured by the nonradiative recombination centers distributed outside the localized potential traps and the state-filling effect in the localization states is suppressed.

  14. Electroluminescent TCC, C3dg and fB/Bb epitope assays for profiling complement cascade activation in vitro using an activated complement serum calibration standard.

    Science.gov (United States)

    van Vuuren, B Jansen; Bergseth, G; Mollnes, T E; Shaw, A M

    2014-01-15

    Electroluminescent assays for epitopes on the complement components C3dg, terminal complement complex (TCC) and factor B/Bb (fB/Bb) have been developed with capture and detection antibodies to produce detection limits C3dg=91±9ng/mL, TCC=3±0.1ng/mL and fB=55.7±0.1ng/mL. The assay performance was assessed against a series of zymosan and heat aggregated IgG (HAIgG) in vitro activations of complement using a calibrated activated complement serum (ACS) as calibration standard. The ACS standard was stable within 20% accuracy over a 6-month period with freeze-thaw cycles as required. Differential activation of the complement cascade was observed for TCC showing a pseudo-first order formation half-life of 3.5h after activation with zymosan. The C3dg activation fragment indicates a 10% total activation for both activation agents. The kinetic-epitope analysis for fB indicates that the capture epitope is on the fB/Bb protein fragment which can then become covered by the formation of C3bBb or C3bBbP complexes during the time course of the cascade.

  15. Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

    Science.gov (United States)

    Lin, Guangyang; Yi, Xiaohui; Li, Cheng; Chen, Ningli; Zhang, Lu; Chen, Songyan; Huang, Wei; Wang, Jianyuan; Xiong, Xihuan; Sun, Jiaming

    2016-10-01

    A lateral p-Si0.05Ge0.95/i-Ge/n-Si0.05Ge0.95 heterojunction light emitting diode on a silicon-on-insulator (SOI) substrate was proposed, which is profitable to achieve higher luminous extraction compared to vertical junctions. Due to the high carrier injection ratio of heterostructures and optical reflection at the SiO2/Si interface of the SOI, strong room temperature electroluminescence (EL) at around 1600 nm from the direct bandgap of i-Ge with 0.30% tensile strain was observed. The EL peak intensity of the lateral heterojunction is enhanced by ˜4 folds with a larger peak energy than that of the vertical Ge p-i-n homojunction, suggesting that the light emitting efficiency of the lateral heterojunction is effectively improved. The EL peak intensity of the lateral heterojunction, which increases quadratically with injection current density, becomes stronger for diodes with a wider i-Ge region. The CMOS compatible fabrication process of the lateral heterojunctions paves the way for the integration of the light source with the Ge metal-oxide-semiconductor field-effect-transistor.

  16. Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities

    Science.gov (United States)

    Montes Bajo, M.; Dunn, G.; Stephen, A.; Khalid, Ata; Cumming, D. R. S.; Oxley, C. H.; Glover, J.; Kuball, M.

    2013-03-01

    When biased in the negative differential resistance regime, electroluminescence (EL) is emitted from planar GaAs heterostructure Gunn diodes. This EL is due to the recombination of electrons in the device channel with holes that are generated by impact ionisation when the Gunn domains reach the anode edge. The EL forms non-uniform patterns whose intensity shows short-range intensity variations in the direction parallel to the contacts and decreases along the device channel towards the cathode. This paper employs Monte Carlo models, in conjunction with the experimental data, to analyse these non-uniform EL patterns and to study the carrier dynamics responsible for them. It is found that the short-range lateral (i.e., parallel to the device contacts) EL patterns are probably due to non-uniformities in the doping of the anode contact, illustrating the usefulness of EL analysis on the detection of such inhomogeneities. The overall decreasing EL intensity towards the anode is also discussed in terms of the interaction of holes with the time-dependent electric field due to the transit of the Gunn domains. Due to their lower relative mobility and the low electric field outside of the Gunn domain, freshly generated holes remain close to the anode until the arrival of a new domain accelerates them towards the cathode. When the average over the transit of several Gunn domains is considered, this results in a higher hole density, and hence a higher EL intensity, next to the anode.

  17. Analysis of interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide diodes by electroluminescence spectroscopy and electric-field-induced optical second-harmonic generation measurement

    Science.gov (United States)

    Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-03-01

    By using electroluminescence (EL) spectroscopy and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide (IZO) diodes, to characterize the pentacene/polyimide interface. Under positive voltage application to the Au electrode with reference to the IZO electrode, the EFISHG showed that holes are injected from Au electrode, and accumulate at the pentacene/polyimide interface with the surface charge density of Qs = 3.8 × 10-7 C/cm2. The EL spectra suggested that the accumulated holes are not merely located in the pentacene but they are transferred to the interface states of polyimide. These accumulated holes distribute with the interface state density greater than 1012 cm-2 eV-1 in the range E = 1.5-1.8 and 1.7-2.4 eV in pentacene and in polyimide, respectively, under assumption that accumulated holes govern recombination radiation. The EL-EFISHG measurement is helpful to characterize organic-organic layer interfaces in organic devices and provides a way to analyze interface energy states.

  18. Optical behavior of the conjugated polymer MEH-PPV thin films stretched in bi-layer dwetting by an unstable layer

    Science.gov (United States)

    Chen, Po-Tsun; Yang, Arnold C.-M.

    2012-02-01

    Molecular packing and chain conformation play important roles in the optoelectronic performance of conjugated polymer thin films. It has been shown that by virtue of stretching via dewetting, the photoluminescence (PL) efficiencies of rarefied MEH-PPV thin films may be dramatically enhanced. To result similar effects in the stable non-diluted pristine MEH-PPV thin films, bi-layer dewetting was attempted in samples of MEH-PPV thin films (˜7nm) covered by one layer of polystyrene (PS) (˜40nm) that dewetted in toluene vapor to form droplets (height ˜300 nm) and ultrathin residual layer (˜3nm) on the substrate. The instability was initiated from the PS layer in which small pinholes first emerged upon the intake of the solvent vapor. The pinholes then expanded and deepened into the underlying MEH-PPV, forcing the conjugated film to dewet. As a result of the stretching induced by the dewetting, the PL peak blue-shifted 20 nm to 540 nm and the intensity was enhanced around 10 times. Revealed by the position-sensitive confocal PL data, the huge enhancement came from both the droplet and residual layer, caused by molecular separation and stretching. Electroluminescence devices are being made based on these stretched MEH-PPV films.

  19. Optical Properties of Hybrid Inorganic/Organic Thin Film Encapsulation Layers for Flexible Top-Emission Organic Light-Emitting Diodes.

    Science.gov (United States)

    An, Jae Seok; Jang, Ha Jun; Park, Cheol Young; Youn, Hongseok; Lee, Jong Ho; Heo, Gi-Seok; Choi, Bum Ho; Lee, Choong Hun

    2015-10-01

    Inorganic/organic hybrid thin film encapsulation layers consist of a thin Al2O3 layer together with polymer material. We have investigated optical properties of thin film encapsulation layers for top-emission flexible organic light-emitting diodes. The transmittance of hybrid thin film encapsulation layers and the electroluminescent spectrum of organic light-emitting diodes that were passivated by hybrid organic/inorganic thin film encapsulation layers were also examined as a function of the thickness of inorganic Al203 and monomer layers. The number of interference peaks, their intensity, and their positions in the visible range can be controlled by varying the thickness of inorganic Al2O3 layer. On the other hand, changing the thickness of monomer layer had a negligible effect on the optical properties. We also verified that there is a trade-off between transparency in the visible range and the permeation of water vapor in hybrid thin film encapsulation layers. As the number of dyads decreased, optical transparency improved while the water vapor permeation barrier was degraded. Our study suggests that, in top-emission organic light-emitting diodes, the thickness of each thin film encapsulation layer, in particular that of the inorganic layer, and the number of dyads should be controlled for highly efficient top-emission flexible organic light-emitting diodes.

  20. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  1. Effect of doping different dyes in Alq{sub 3} on electroluminescence and morphology of layers using single furnace method

    Energy Technology Data Exchange (ETDEWEB)

    Janghouri, Mohammad [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of); Mohajerani, Ezeddin, E-mail: e-mohajerani@sbu.ac.ir [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of); Khabazi, Amir; Abedi, Zahra; Razavi, Hosein [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of)

    2013-08-15

    A method for obtaining red emission from organic-light emitting diodes has been developed by dissolving red and green dyes in a common solvent and thermally evaporating the mixture in a single furnace. Devices with fundamental structure of ITO/PEDOT: PSS (55 nm)/PVK (90 nm)/Alq{sub 3}: porphyrin (50 nm)/Al (180 nm) were fabricated. The emission properties and chromaticity coordinates of the devices depend on the energy transfer between the emission of host and the absorption of the dyes. TPP and TPPNO{sub 2} doped in Alq{sub 3} showed more pure red emission compared to 3,4-TPP, and PdTPP doped in Alq{sub 3} based devices. AFM measurement showed that the morphology of the layers depends on the type of dyes and uniform mixing of porphyrin compounds and Alq{sub 3} at constant deposition rate. It is shown that this new method is a promising candidate for fabrication of low cost red OLEDs at more homogeneous layer. -- Highlights: ► We fabricated light emitting layer by dissolving dyes in common solvent followed by thermal evaporation of dyes. ► Achieving red emissions with a single furnace. ► We employed single furnace for the first time to control the emitting color of OLED. ► The morphology of the films depends on the homogeneity and type of dyes. ► Low cost, homogeneity and effective energy transfer are advantages of this method.

  2. The Evolution of Film: Rethinking Film Studies

    OpenAIRE

    Harbord, Janet P.

    2007-01-01

    How is film changing? What does it do, and what do we do with it? This book examines the reasons why we should be studying film in the twenty-first century, connecting debates from philosophy, anthropology and new media with historical concerns of film studies.

  3. Enhanced DC-operated electroluminescence of forwardly aligned p/MQW/n InGaN nanorod LEDs via DC offset-AC dielectrophoresis.

    Science.gov (United States)

    Eo, Yun Jae; Yoo, Gang Yeol; Kang, Hyelim; Lee, Youngki; Kim, Chan Sik; Oh, Ji Hye; Lee, Keyong Nam; Kim, Woong; Do, Young Rag

    2017-10-11

    We introduce orientation-controlled alignment process of p-GaN/InGaN multi quantum-well/n-GaN (p/MQW/n InGaN) nanorod light-emitting diodes (LEDs) by applying direct-current (DC) offset alternating-current (AC) or pulsed DC electric fields across interdigitated metal electrodes. The as-forwardly aligned p/MQW/n InGaN nanorod LEDs by a pulsed DC dielectrophoresis (DEP) assembly process improve the electroluminescence (EL) intensities by 1.8 times compared to the conventional AC DEP assembly process under DC electric field operation and exhibit an enhanced applied current and EL brightness in the current-voltage and EL intensity-voltage curves that can be directly used as fundamental data to construct DC-operated nanorod LED devices, such as LED areal surface lightings, scalable lightings (micrometers to inches) and formable surface lightings. The enhancement of the applied current, the improved EL intensity, and the increased number of forwardly aligned p/MQW/n InGaN nanorods in panchromatic cathodoluminescence (CL) images confirm the considerable enhancement of forwardly aligned 1D nanorod LEDs between two opposite electrodes using DC offset-AC or a pulsed DC electric field DEP assembly process. These DC offset-AC or pulsed DC electric field DEP assembly process suggests that designing for these types of interactions could yield new ways to control the orientation of asymmetric p/MQW/n InGaN diode-type LED nanorods with a relatively low aspect ratio.

  4. Film Festivals and Migration

    NARCIS (Netherlands)

    de Valck, M.; Ness, I.

    2013-01-01

    Film festivals have become a widespread phenomenon since their inception at the Venice Film Festival in 1932, the first festival to be organized on a regular basis. Film festivals proliferated in particular from the late 1960s onward. Today a film festival takes place every day somewhere: the

  5. The Film Spectator

    NARCIS (Netherlands)

    Buckland, Warren

    1995-01-01

    This is the first collection of essays in English to give prominence to the work of European film scholars whose aim is 'to understand how film is understood'. The Film Spectator raises fundamental issues that have confronted film theory for the past thirty years, but which have never been adequatel

  6. Magnetic field effect in organic films and devices

    Science.gov (United States)

    Gautam, Bhoj Raj

    In this work, we focused on the magnetic field effect in organic films and devices, including organic light emitting diodes (OLEDs) and organic photovoltaic (OPV) cells. We measured magnetic field effect (MFE) such as magnetoconductance (MC) and magneto-electroluminescence (MEL) in OLEDs based on several pi- conjugated polymers and small molecules for fields |B|˜2mT. Magnetic field effect (MFE) measured on three isotopes of Poly (dioctyloxy) phenylenevinylene (DOO-PPV) showed that both regular and ultra-small effects are isotope dependent. This indicates that MFE response in OLED is mainly due to the hyperfine interaction (HFI). We also performed spectroscopy of the MFE including magneto-photoinduced absorption (MPA) and magneto-photoluminescence (MPL) at steady state conditions in several systems. This includes pristine Poly[2-methoxy-5-(2-ethylhexyl-oxy)-1,4-phenylene-vinylene] (MEH-PPV) films, MEH-PPV films subjected to prolonged illumination, and MEH-PPV/[6,6]-Phenyl C61 butyric acid methyl ester (PCBM) blend, as well as annealed and pristine C60 thin films. For comparison, we also measured MC and MEL in organic diodes based on the same materials. By directly comparing the MPA and MPL responses in films to MC and MEL in organic diodes based on the same active layers, we are able to relate the MFE in organic diodes to the spin densities of the excitations formed in the device, regardless of whether they are formed by photon absorption or carrier injection from the electrodes. We also studied magneto-photocurrent (MPC) and power conversion efficiency (PCE) of a 'standard' Poly (3-hexylthiophene)/PCBM device at various Galvinoxyl radical wt%. We found that the MPC reduction with Galvinoxyl wt% follows the same trend as that of the PCE enhancement. In addition, we also measured the MPC response of a series of OPV cells. We attribute the observed broad MPC to short-lived charge transfer complex species, where spin mixing is caused by the difference, Deltag of the

  7. Electroluminescence of a Multi-Layered Organic Light-Emitting Diode Utilizing Trans-4-[p-[N-methyl-N-(hydroxymethyl)amino]styryl]-N-Methylphridinium Tetraphenylborate as the Active Layer

    Science.gov (United States)

    Feng, Xue-Yuan; Zhang, Jia-Yu; Xu, Chun-Xiang; Qiao, Yi; Cui, Yi-Ping

    2006-06-01

    Employing an organic dye salt of trans-4-[p-[N-methyl-N-(hydroxymethyl)amino]styryl]-N-methylphridinium tetraphenylborate (ASPT) as the active layer, 8-hydrocyquinoline aluminium (Alq3) as the electron transporting layer and N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine (TPD) as the hole transporting layer, respectively, we fabricate a multi-layered organic light-emitting diode and observe the colour tunable electroluminescence (EL). The dependence of the EL spectra on the applied voltage is investigated in detail, and the recombination mechanism is discussed by considering the variation of the hole-electron recombination region.

  8. Durable solar mirror films

    Energy Technology Data Exchange (ETDEWEB)

    O' Neill, Mark B.; Henderson, Andrew J.; Hebrink, Timothy J.; Katare, Rajesh K.; Jing, Naiyong; North, Diane; Peterson, Eric M.

    2017-02-14

    The present disclosure generally relates to durable solar mirror films, methods of making durable solar mirror films, and constructions including durable solar mirror films. In one embodiment, the present disclosure relates to a solar mirror film comprising: a multilayer optical film layer including having a coefficient of hygroscopic expansion of less than about 30 ppm per percent relative humidity; and a reflective layer having a coefficient of hygroscopic expansion.

  9. Cross-Characterization for Imaging Parasitic Resistive Losses in Thin-Film Photovoltaic Modules

    Directory of Open Access Journals (Sweden)

    Archana Sinha

    2016-08-01

    Full Text Available Thin-film photovoltaic (PV modules often suffer from a variety of parasitic resistive losses in transparent conductive oxide (TCO and absorber layers that significantly affect the module electrical performance. This paper presents the holistic investigation of resistive effects due to TCO lateral sheet resistance and shunts in amorphous-silicon (a-Si thin-film PV modules by simultaneous use of three different imaging techniques, electroluminescence (EL, lock-in thermography (LIT and light beam induced current (LBIC, under different operating conditions. Results from individual techniques have been compared and analyzed for particular type of loss channel, and combination of these techniques has been used to obtain more detailed information for the identification and classification of these loss channels. EL and LIT techniques imaged the TCO lateral resistive effects with different spatial sensitivity across the cell width. For quantification purpose, a distributed diode modeling and simulation approach has been exploited to estimate TCO sheet resistance from EL intensity pattern and effect of cell width on module efficiency. For shunt investigation, LIT provided better localization of severe shunts, while EL and LBIC given good localization of weak shunts formed by the scratches. The impact of shunts on the photocurrent generation capability of individual cells has been assessed by li-LBIC technique. Results show that the cross-characterization by different imaging techniques provides additional information, which aids in identifying the nature and severity of loss channels with more certainty, along with their relative advantages and limitations in particular cases.

  10. Influence of Exciplex formation on the electroluminescent properties of dimeric Zn (II) bis-2-(2'-hydroxyphenyl) benzoxazole complex and monomeric Zn (II) 2-(1'-hydroxynaphthyl) benzothiazole complex

    Science.gov (United States)

    Prakash, Sattey; Anand, R. S.; Manoharan, S. Sundar

    2011-10-01

    In this paper we present the factors affecting electroluminescent properties of Zinc complexes of oxazole & thiazole derivatives. Electroluminescent spectra of the Zinc (II) complex of bis-[2-(2'-hydroxyphenyl) benzoxazole], [Zn (HPBO)2]2 and 2-(1'-hydroxynaphthyl) benzothiazole [Zn (HNBT)2] show unusual broadening and shows structural and photophysical similarity with [Zn (HPBT)2]2, a dimeric complex. The [Zn (HPBO)2]2 complex as an emissive layer in the device structure ITO /PEDOT:PSS /TPD (30nm) /[Zn (HPBO)2]2 (60nm) /BCP (6nm) /Ca (3nm) /Al (200nm) shows a broad bluish green emission, with a full width at half maxima (FWHM1˜70nm). The EL spectra is much broader compared to the PL spectra because of exciplex formation at the interfacial region between the emissive layer (EML) & hole transport layer (HTL). We also show the device performance of Zinc 2-(1'-hydroxynaphthyl) benzothiazole [Zn (HNBT)2] complex as emissive layer. Distinctly this device shows a broad greenish yellow emission with a peak maxima at 535nm and 690nm, owing to the exciplex formation between electron transport layer (ETL) and emissive layer (EML), which is in sharp contrast to the exciplex formation across the HTL-EML interface observed for the [Zn (HPBO)2]2 complex.

  11. Film Name Translation

    Institute of Scientific and Technical Information of China (English)

    师晓晓

    2014-01-01

    <正>1.Introduction A good translation of the name should convey the information of the film and attract the audience’s desire for going to the cinema.Translation of film names should have business,information,culture,aesthetic features,while a short eye-catching name aims to leave the audience an unforgettable impression.This thesis discusses the translation of English film names from the aspects of the importance of English film name translation,principles for translating English film names and methods of English film name translation.

  12. Electronic Structure in Thin Film Organic Semiconductors

    Science.gov (United States)

    2009-06-27

    environment (in contrast to the nitrogen environment ) between the two molecules in XAS and x- ray photoemission spectroscopy (XPS) measurements, which are in...Weck, "Electroluminescent poly( quinoline )s and metalloquinolates", Polym Rev 46, 47 (2006). 2. A. DeMasi, L.F.J. Piper, Y. Zhang, I. Reid, S. Wang

  13. 高温导致三结太阳电池电致发光谱变化%Change of Electroluminescence Spectra of Solar Cells Caused by Heating

    Institute of Scientific and Technical Information of China (English)

    任攀; 吴凌远; 王伟平; 刘国栋

    2014-01-01

    高温下半导体材料性能会发生变化,影响太阳电池光电转换效率.为了了解GaInP/GaAs/Ge三结太阳电池在聚光和高温条件下的工作性质,研究了热加载后的三结太阳电池样品在定压下的电致发光谱,发现受热后GaInP顶电池和GaAs中电池的电致发光谱的强度发生变化,出现峰值反转的现象.结合光照下伏-安特性、暗伏安特性及外量子效率分析了这种现象产生的原因,即加热过程在GaInP顶电池中引入晶格结构缺陷,导致其电致发光强度变弱,同时顶电池并联电阻变小,GaAs中电池分压有所增加,发光增强,整个样品的电致发光谱出现峰值反转现象.结果表明GaAs中电池比GaInP顶电池具有更好的耐热性.%The photoelectric characteristics of solar cells can be changed after heated,which ultimately influence the converting efficiency of solar cell.Electroluminescence spectra of GaInP/GaAs/Ge triple junction solar cell under constant voltage are investigated in order to understand the working properties of such cells under concentration and heating condition.It is found that the luminescence peaks of GaInP top cell and GaAs middle cell change and reverse after the solar cells are heated.By considering the current-voltage characteristic and external quantum efficiency,the origin of this phenomenon is found to attribute to the introduction of deep level defects in the crystal.GaAs middle cell is found to be more tolerant to heat-induced damage than GaInP top cell.

  14. Control of the mutual arrangement of cyclometalated ligands in cationic iridium(III) complexes. Synthesis, spectroscopy, and electroluminescence of the different isomers.

    Science.gov (United States)

    Fernández-Hernández, Jesús M; Yang, Cheng-Han; Beltrán, Juan I; Lemaur, Vincent; Polo, Federico; Fröhlich, Roland; Cornil, Jêrôme; De Cola, Luisa

    2011-07-13

    Synthetic control of the mutual arrangement of the cyclometalated ligands (C^N) in Ir(III) dimers, [Ir(C^N)(2)Cl](2), and cationic bis-cyclometalated Ir(III) complexes, [Ir(C^N)(2)(L^L)](+) (L^L = neutral ligand), is described for the first time. Using 1-benzyl-4-(2,4-difluorophenyl)-1H-1,2,3-triazole (HdfptrBz) as a cyclometalating ligand, two different Ir(III) dimers, [Ir(dfptrBz)(2)Cl](2), are synthesized depending on the reaction conditions. At 80 °C, the dimer with an unusual mutual cis-C,C and cis-N,N configuration of the C^N ligands is isolated. In contrast, at higher temperature (140 °C), the geometrical isomer with the common cis-C,C and trans-N,N arrangement of the C^N ligand is obtained. In both cases, an asymmetric bridge, formed by a chloro ligand and two adjacent nitrogens of the triazole ring of one of the cyclometalated ligands, is observed. The dimers are cleaved in coordinating solvents to give the solvento complexes [Ir(dfptrBz)(2)Cl(S)] (S = DMSO or acetonitrile), which maintain the C^N arrangement of the parent dimers. Controlling the C^N ligand arrangement in the dimers allows for the preparation of the first example of geometrical isomers of a cationic bis-cyclometalated Ir(III) complex. Thus, N,N-trans-[Ir(dfptrBz)(2)(dmbpy)](+) (dmbpy = 4,4'-dimethyl-2,2'-bipyridine), with cis-C,C and trans-N,N arrangement of the C^N ligands, as well as N,N-cis-[Ir(dfptrBz)(2)(dmbpy)](+), with cis-C,C and cis-N,N C^N ligand orientation, are synthesized and characterized. Interestingly, both isomers show significantly different photophysical and electroluminescent properties, depending on the mutual arrangement of the C^N ligands. Furthermore, quantum chemical calculations give insight into the observed photophysical experimental data.

  15. Effect of the substituents on the photophysical, electrochemical and electroluminescence properties of OLED dopant Iridium bis(2-phenylbenzothiozolato- N,C2')(acetylacetonate)

    Science.gov (United States)

    Ivanov, P.; Tomova, R.; Petrova, P.

    2014-12-01

    The effect of two substituents: clorine and 1,3-diphenylpropane-1,3-dionate, placed on different position in the molecule of Iridium (III) bis(2-phenylbenzothiozolato-N,C2')- (acetylacetonate) (bt)2Ir(acac), on its electrochemical behaviour, photophysical and electroluminescence properties were investigated. Three complexes (bt)2Ir(acac), Iridium (III) bis[2-(4-chlorophenyl)benzothiazolato-N,C2']-acetylacetonate (Clbt)2Ir(acac), in which the Cl atom was introduced on the 4-position in the benzothiazole ring, and the new Iridium (Ill) bis[2 -phenylbenzothiazolato -N,C2'] -(1,3 -diphenylpropane-1,3 -dionate) (bt)2Ir(dbm), where ancillary acetylacetonate ligand was replaced by 1,3-diphenylpropane-1,3-dionate, were synthesized and characterised by 1H-NMR and elemental analysis. The HOMO/LUMO energy levels of the complexes were determined by cyclic voltammetry (CV) and their properties were established by UV-Visible and fluorescence spectroscopy. The application of (Clbt)2Ir(acac), (bt)2Ir(bsm) and (bt)2Ir(acac) as dopants in hole transporting layer (HTL) of Organic light- emitting diodes(OLEDs). It was found that with respect to the reference (bt)2Ir(acac): both LUMO and HOMO of the substituted complexes were shifted to more positive values accordingly with 0.23 and 0.19 eV for (Clbt)2Ir(acac) and 0.14 and 0.12 eV for (bt)2Ir(dbm). OLEDs doped with 1 w% of the complexes irradiated the warm white light with Commission internationale de l'eclairage (CIE) coordinates: 0.24;0.38 for (Clbt)2Ir(acac), 0.30;0.44 for (bt)2Ir(acac) and 0.28;0.46 for (bt)2Ir(dbm). Devices doped with 10 w% of all complexes irradiated in the yellow orange region of the spectrum.

  16. Sb2O3/Ag/Sb2O3 Multilayer Transparent Conducting Films For Ultraviolet Organic Light-emitting Diode

    Science.gov (United States)

    Song, Chunyan; Zhang, Nan; Lin, Jie; Guo, Xiaoyang; Liu, Xingyuan

    2017-01-01

    A novel UV transparent conducting films based on Sb2O3/Ag/Sb2O3 (SAS) structure, which were prepared by an electron-beam thermal evaporation at room temperature. This SAS exhibits excellent electrical, optical and stable properties. Especially for UV region, the SAS has high transmittance of 80% at 306 nm and 92% at 335 nm, meanwhile achieving low sheet resistance ( ≤ 10 Ω sq‑1). The UV OLED based on the SAS show competitive device performance. The UV OLED obtains the peak of UV electroluminescence at 376 nm and shows a very high maximum EQE of 4.1% with the maximum output power density of 5.18 mW cm‑2. These results indicate that the potential of SAS applications in deep UV transparent electrodes and large-scale flexible transparent electronics.

  17. The Educational Film Industry

    Science.gov (United States)

    Tortora, Vincent R.; Schillaci, Peter

    1975-01-01

    Increased dialog is needed among educational film producers, distributors, and consumers in order to be sure that what is being produced meets educators' needs and also to help solve the financial problems of the film industry. (LS)

  18. Film som kunst

    DEFF Research Database (Denmark)

    Petersen, Anne Ring

    2013-01-01

    connotations of the African-print fabric, which are also central to the critique of power in Un Ballo in Maschera. Its critical agenda is then analysed and put into historical perspective by relating the film to Black British film. A comparison with the Black Audio Film Collective’s key work Handsworth Songs......Films by artists induce scholars to work across art, film and cultural history. Accordingly, this article adopts an interdisciplinary approach to the British-Nigerian artist Yinka Shonibare’s film Un Ballo in Maschera (2004). The film is grounded in Shonibare’s unique use of African-print fabric...... in conjunction with references to European cultural and political history, but the film is also – it is alleged – rooted in Black British cinema and the transnational postcolonialism which emerged in the UK of the 1980s. The article starts with a general introduction to Shonibare’s art and the colonial...

  19. Film som kunst

    DEFF Research Database (Denmark)

    Petersen, Anne Ring

    2013-01-01

    Films by artists induce scholars to work across art, film and cultural history. Accordingly, this article adopts an interdisciplinary approach to the British-Nigerian artist Yinka Shonibare’s film Un Ballo in Maschera (2004). The film is grounded in Shonibare’s unique use of African-print fabric...... connotations of the African-print fabric, which are also central to the critique of power in Un Ballo in Maschera. Its critical agenda is then analysed and put into historical perspective by relating the film to Black British film. A comparison with the Black Audio Film Collective’s key work Handsworth Songs...... in conjunction with references to European cultural and political history, but the film is also – it is alleged – rooted in Black British cinema and the transnational postcolonialism which emerged in the UK of the 1980s. The article starts with a general introduction to Shonibare’s art and the colonial...

  20. Defining Documentary Film

    DEFF Research Database (Denmark)

    Juel, Henrik

    2006-01-01

    A discussion of various attemts at defining documentary film regarding form, content, truth, stile, genre or reception - and a propoposal of a positive list of essential, but non-exclusive characteristica of documentary film......A discussion of various attemts at defining documentary film regarding form, content, truth, stile, genre or reception - and a propoposal of a positive list of essential, but non-exclusive characteristica of documentary film...

  1. Lars von Triers film

    DEFF Research Database (Denmark)

    Nielsen, Lisbeth Overgaard

    2007-01-01

    Afhandlingen undersøger Lars von Triers filmæstetik, som den kommer til udtryk i spillefilmene fra perioden 1984-2007. Afhandlingen analyserer de enkelte films stil, virkningsstrategi og betydningsdannelse.......Afhandlingen undersøger Lars von Triers filmæstetik, som den kommer til udtryk i spillefilmene fra perioden 1984-2007. Afhandlingen analyserer de enkelte films stil, virkningsstrategi og betydningsdannelse....

  2. Literature and Film.

    Science.gov (United States)

    Richardson, Robert

    The differences, similarities, and common goals of film and literature, as well as the ways in which each form and its associated criticism is able to illuminate the other, are discussed in this book. Individual chapters are "Literature and Film,""Literary Origins and Backgrounds of the Film,""Griffith and Eisenstein: The Uses of Literature in…

  3. Getting into Film.

    Science.gov (United States)

    London, Mel

    This book describes the various aspects of the film industry and the many jobs related to filmmaking, stressing that no "formula" exists for finding a successful career in the film industry. Chapters provide information on production, writing for film, cinematography, editing, music, sound, animation and graphics, acting and modeling, the "unsung…

  4. Film Front Weimar

    NARCIS (Netherlands)

    Kester, te Bernadet

    2002-01-01

    This first book-length study shows how Germany tried to reconcile the horrendous experiences of the FirstWorld War through the films made in 1919-1933. Drawing on the analysis of twenty-five such films, and covering a wide range of documentaries as well as feature films on the reasons for the outbre

  5. Teaching Culture Through Films

    Institute of Scientific and Technical Information of China (English)

    徐婷

    2016-01-01

    Cultural teaching is an issue which is associated with complexity and paradox and also it is a big challenge for faculty. Teaching culture through films has become an important way of cross-cultural teaching This paper focuses on the reasons for teaching culture through films, the value and how it works. And finally it leads out the prospects of cultural teaching through films.

  6. Getting into Film.

    Science.gov (United States)

    London, Mel

    This book describes the various aspects of the film industry and the many jobs related to filmmaking, stressing that no "formula" exists for finding a successful career in the film industry. Chapters provide information on production, writing for film, cinematography, editing, music, sound, animation and graphics, acting and modeling, the "unsung…

  7. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  8. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  9. 360 graders film

    OpenAIRE

    Hansen, Mie Maria Græsvænge; Johansen, Morten Dalgaard; Lilleås, Lauge Bro; Nielsen, Sabine Murholt; Nielsen, Jon Vraamose Møller; Poulsen, Thomas Heltborg

    2012-01-01

    This study is about how to produce and test the effects of a 360° film. In classical film production there are four steps – preproduction, production, post production and distribution. The four steps are being explored with the purpose of finding challenges and potentials in 360° film production. This is done by testing existing techniques and methods and re-using and adapting these in 360° film. To test how people use and react to the effect of a produced 360° film, a group of nine individua...

  10. Chronicles of foam films.

    Science.gov (United States)

    Gochev, G; Platikanov, D; Miller, R

    2016-07-01

    The history of the scientific research on foam films, traditionally known as soap films, dates back to as early as the late 17th century when Boyle and Hooke paid special attention to the colours of soap bubbles. Their inspiration was transferred to Newton, who began systematic study of the science of foam films. Over the next centuries, a number of scientists dealt with the open questions of the drainage, stability and thickness of foam films. The significant contributions of Plateau and Gibbs in the middle/late 19th century are particularly recognized. After the "colours" method of Newton, Reinold and Rücker as well as Johhonnot developed optical methods for measuring the thickness of the thinner "non-colour" films (first order black) that are still in use today. At the beginning of the 20th century, various aspects of the foam film science were elucidated by the works of Dewar and Perrin and later by Mysels. Undoubtedly, the introduction of the disjoining pressure by Derjaguin and the manifestation of the DLVO theory in describing the film stability are considered as milestones in the theoretical development of foam films. The study of foam films gained momentum with the introduction of the microscopic foam film methodology by Scheludko and Exerowa, which is widely used today. This historical perspective serves as a guide through the chronological development of knowledge on foam films achieved over several centuries.

  11. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  12. Analysis of Western Film' influence on Chinese Film Culture

    Institute of Scientific and Technical Information of China (English)

    罗淞译

    2015-01-01

    Western countries are the place where the international film culture originated. The western film has a far-reaching influence on the development of film and television industry all over the world. As China's film and television industry is in the era of reform, it is an essential part to use the experience in development of western films which can provide Chinese film culture with guidance in various fields. The present thesis firstly gives an analysis into characteristics of the western film culture and summarizes its influences on Chinese film culture, and then provides film art reform with some feasible suggestions.

  13. Organic Thin Film Devices for Displays and Lighting

    Science.gov (United States)

    Weiss, Oliver J.; Krause, Ralf; Paetzold, Ralph

    Organic materials can be used for fabrication of, e.g., electronic circuits, solar cells, light sensors, memory cells and light emitting diodes. Especially organic light emitting diodes (OLEDs) are increasingly attractive because of their huge market potential. The feasibility of efficient OLEDs was first shown in 1987 [3]. Only about ten years later the first product, a display for car radios, entered the market. Today monochrome and full colour OLED-displays can be found in many applications replacing established flat panel display technologies like TFT-LCDs. This substitution is a consequence of the outstanding attributes of OLED technology: Organic light emitting displays are self-emissive, thin, video capable and in addition they show a wide temperature operation range and allow a viewing angle of nearly 180 degree in conjunction with a low power consumption. As performance has steadily increased over the last years, today OLEDs are also under investigation as next generation light source. In contrast to inorganic LEDs, they can be built as flat 2-dimensional light sources that are lightweight, colour tunable, and potentially cheap. This will open up new degrees of freedom in design leading also to completely new applications. In this contribution we will have a brief view on the history of organic electroluminescent materials before we introduce the basic principles of OLEDs with a focus on the physical processes leading to light generation in thin organic films. Along with an overview of different concepts and technologies used to build OLEDs, the current status of OLED development will be illustrated. The last part focuses on the challenges that have to be overcome to enable a sustainable success in the display and lighting markets.

  14. Synthesis, Photophysical Properties and Near Infrared Electroluminescence of 1 (4),8(11),15(18),22(25)-Tetra- (methoxy-phenoxy) phthalocyanine

    Institute of Scientific and Technical Information of China (English)

    白青龙; 张春花; 程传辉; 李万程; 王瑾; 杜国同

    2012-01-01

    A new soluble phthalocyaine 1 (4),8(11), 15(18),22(25)-tetra-(methoxy-phenoxy)phthalocyanine (MPPc) was synthesized and verified by mass spectrum (MS), 1H NMR, IR and elemental analysis. The methoxy-phenoxy groups were introduced in order to enhance the solubility of the phthalocyanine. The photophysical and electrolu- minescent properties were investigated. The organic light-emitting diodes (OLEDs) with the structure of ITO/PVK:MPPc(40 nm)/BCP(20 nm)/Alq3(30 nm)/Al were fabricated. Room-temperature near infrared (NIR) electroluminescence (EL) was observed near 891 nm that effectively covered the first optical communication win- dow near 850 nm.

  15. Film: Genres and Genre Theory

    DEFF Research Database (Denmark)

    Bondebjerg, Ib

    2015-01-01

    Genre is a concept used in film studies and film theory to describe similarities between groups of films based on aesthetic or broader social, institutional, cultural, and psychological aspects. Film genre shares similarities in form and style, theme, and communicative function. A film genre...... is thus based on a set of conventions that influence both the production of individual works within that genre and audience expectations and experiences. Genres are used by industry in the production and marketing of films, by film analysts and critics in historic analysis of film, and as a framework...... for audiences in the selection and experience of films....

  16. Film Music. Factfile No. 8.

    Science.gov (United States)

    Elsas, Diana, Ed.; And Others

    Organizations listed here with descriptive information include film music clubs and music guilds and associations. These are followed by a representative list of schools offering film music and/or film sound courses. Sources are listed for soundtrack recordings, sound effects/production music, films on film music, and oral history programs. The…

  17. Flexible Free-Standing III-Nitride Thin Films for Emitters and Displays.

    Science.gov (United States)

    Cheung, Y F; Li, K H; Choi, H W

    2016-08-24

    The majority of a GaN light-emitting diode (LED) is released from its sapphire substrate through selective-area laser lift-off to form a freely suspended light emitter. By virtue of being suspended in air without supporting substrates, the ultrathin crystalline and crack-free film possesses flexibility and bendability. The free-standing LEDs benefit from significant relaxation of strain, evident from red-shifting of the E2(high) phonon frequencies as measured by Raman spectroscopy toward those of strain-free free-standing GaN substrates. The phonon frequencies remain invariant upon bending of the film; this indicates that the properties of the flexible device will not be dependent on the bending curvatures. The observation of pronounced spectral blue-shifts from the photoluminescence (PL) spectrum from the flexible regions further confirms the occurrence of strain relaxation in the quantum wells. Being free-standing and thus lacking a direct heat-sinking pathway, emissions from the different regions of the suspended film can be affected by thermal effects to different extents, which are investigated by long-wave infrared thermometry. Heat accumulation is determined to be most severe at the far end of the flexible stripe at higher currents, leading to reduced efficiencies and electroluminescence (EL) spectral red-shifts. Based on this architecture, a monolithic 3 × 4 dot-matrix microdisplay prototype is demonstrated, comprising three adjacent flexible stripe emitters with four individually addressable pixels on each stripe. This proof-of-concept demonstration opens up new opportunities for GaN optoelectronics for a wide range of flexible display and visual applications.

  18. Demagnetization in photomagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Pajerowski, Daniel M., E-mail: daniel@pajerowski.com [NIST Center for Neutron Research, Gaithersburg, Maryland 20899 (United States); Hallock, Scott J. [NIST Center for Neutron Research, Gaithersburg, Maryland 20899 (United States); Winston Churchill High School, Potomac, Maryland 20854 (United States)

    2012-05-15

    We present a model for demagnetization in photomagnetic films, and investigate different regimes for the magnetizing process using finite element analysis. It is found that the demagnetizing factor may depend strongly upon the high-spin fraction of the film, and the specifics of the dependence are dictated by the microscopic morphology of the photomagnetic domains. This picture allows for facile interpretation of existing data on photomagnetic films, and can even explain an observed photoinduced decrease in low-field magnetization concurrent with increase in high-spin fraction. As a whole, these results reiterate the need to consider demagnetizing effects in photomagnetic films. - Highlights: Black-Right-Pointing-Pointer Finite element methods are used to examine demagnetization in photomagnetic films. Black-Right-Pointing-Pointer Under the right conditions, photomagnetic films may show a photoinduced decrease. Black-Right-Pointing-Pointer Demagnetization in photomagnets will be important to consider in possible devices.

  19. Ultrathin permalloy films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In view of the principle of glow-discharge, ultrathin Ni81Fe19(12 nm) films were prepared at an ultrahigh base vacuum. The anisotropic magnetoresistance coefficient (AR/R %) for Ni81Fe19(12 nm) film reaches 1.2%, while the value of its coercivity is 127 A/m (i.e. 1.6Oe). Ultrathin Ni81Fe19(12 nm) films were also prepared at a lower base vacuum. The comparison of the structure for two kinds of films shows that the films prepared at an ultrahigh base vacuum have a smoother surface, a denser structure with a few defects; the films prepared at a lower base vacuum have a rougher surface, a porouser structure with some defects.

  20. Renaissance of the Film.

    Science.gov (United States)

    Bellone, Julius, Ed.

    The post-World War II period was one of the liveliest in the history of the cinema. This is a collection of 33 critical articles on some of the best films of the perd. Most of the essays explicate the themes and symbols of the films. The essays deal with these films: "The Apu Trilogy,""L'Avventura,""Balthazar,""Blow-Up,""Bonnie and Clyde," Citizen…

  1. Den danske independent film

    DEFF Research Database (Denmark)

    Hansen, Kim Toft

    2014-01-01

    at producere film, og derved er filmproduktion potentielt gjort tilgængelig for en større gruppe personer som både afsender og modtager. For det fjerde implicerer diskussionen af de to film også genre- og stilmæssige spørgsmål om dansk filmkultur, fordi indiefilmen både i film og uden for filmene italesætter...

  2. Den danske independent film

    DEFF Research Database (Denmark)

    Hansen, Kim Toft

    2014-01-01

    at producere film, og derved er filmproduktion potentielt gjort tilgængelig for en større gruppe personer som både afsender og modtager. For det fjerde implicerer diskussionen af de to film også genre- og stilmæssige spørgsmål om dansk filmkultur, fordi indiefilmen både i film og uden for filmene italesætter...

  3. Conceiving Landscape through Film

    DEFF Research Database (Denmark)

    Farsø, Mads; Petersen, Rikke Munck

    2015-01-01

    This article shows how the media of film can be integrated, explored and can add value to architectural design studios and practice. It elucidates how film may offer an alternative position in architecture, where landscapes and cities are thought, planned and developed in closer relation to their......This article shows how the media of film can be integrated, explored and can add value to architectural design studios and practice. It elucidates how film may offer an alternative position in architecture, where landscapes and cities are thought, planned and developed in closer relation...

  4. High color rendering index of remote-type white LEDs with multi-layered quantum dot-phosphor films and short-wavelength pass dichroic filters

    Science.gov (United States)

    Yoon, Hee Chang; Oh, Ji Hye; Do, Young Rag

    2014-09-01

    This paper introduces high color rendering index (CRI) white light-emitting diodes (W-LEDs) coated with red emitting (Sr,Ca)AlSiN3:Eu phosphors and yellowish-green emitting AgIn5S8/ZnS (AIS/ZS) quantum dots (QDs) on glass or a short-wavelength pass dichroic filter (SPDF), which transmit blue wavelength regions and reflect yellow wavelength regions. The red emitting (Sr,Ca)AlSiN3:Eu phosphor film is coated on glass and a SPDF using a screen printing method, and then the yellowish-green emitting AIS/ZS QDs are coated on the red phosphor (Sr,Ca)AlSiN3:Eu film-coated glass and SPDF using the electrospray (e-spray) method.To fabricate the red phosphor film, the optimum amount of phosphor is dispersed in a silicon binder to form a red phosphor paste. The AIS/ZS QDs are mixed with dimethylformamide (DMF), toluene, and poly(methyl methacrylate) (PMMA) for the e-spray coating. The substrates are spin-coated with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to fabricate a conductive surface. The CRI of the white LEDs is improved through inserting the red phosphor film between the QD layer and the glass substrate. Furthermore, the light intensities of the multi-layered phosphor films are enhanced through changing the glass substrate to the SPDF. The correlated color temperatures (CCTs) vary as a function of the phosphor concentration in the phosphor paste. The optical properties of the yellowish-green AIS/ZS QDs and red (Sr,Ca)AlSiN3:Eu phosphors are characterized using photoluminescence (PL), and the multi-layered QD-phosphor films are measured using electroluminescence (EL) with an InGaN blue LED (λmax = 450 nm) at 60 mA.

  5. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  6. Film: Genres and Genre Theory

    DEFF Research Database (Denmark)

    Bondebjerg, Ib

    2015-01-01

    Genre is a concept used in film studies and film theory to describe similarities between groups of films based on aesthetic or broader social, institutional, cultural, and psychological aspects. Film genre shares similarities in form and style, theme, and communicative function. A film genre...... is thus based on a set of conventions that influence both the production of individual works within that genre and audience expectations and experiences. Genres are used by industry in the production and marketing of films, by film analysts and critics in historic analysis of film, and as a framework...

  7. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  8. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  9. Thin film calorimetry of polymer films

    Science.gov (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William

    2000-03-01

    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  10. Eesti film sai auhindu

    Index Scriptorium Estoniae

    2011-01-01

    Anu Auna film "Vahetus" võitis Rooma sõltumatu filmi festivalil (Rome Independent Film Festival) parima välismaise lühifilmi preemia ning Olga ja Priit Pärna "Elu ilma Gabriella Ferrita" Lissaboni animafilmide festivalil Monstra eripreemia

  11. Dental Training Films.

    Science.gov (United States)

    Veterans Administration Medical Center, Washington, DC.

    This dental training films catalog is organized into two sections. Section I is a category listing of the films by number and title, indexed according to generalized headings; categories are as follow: anatomy, articulator systems, complete dentures, dental assisting, dental laboratory technology, dental materials, dental office emergencies,…

  12. Filming for Television.

    Science.gov (United States)

    Englander, A. Arthur; Petzold, Paul

    Film makers, professional or amateur, will find in this volume an extensive discussion of the adaptation of film technique to television work, of the art of the camera operator, and of the productive relationships between people, organization, and hardware. Chapters include "The Beginnings," an overview of the interrelationship between roles in…

  13. Film, Neuroaesthetics, and Empathy

    DEFF Research Database (Denmark)

    Grodal, Torben Kragh; Kramer, Mette

    2014-01-01

    The article analyzes the link between film viewing and human 'ultra-sociality' (Boyd and Richardson 1998), describing how empathy is supported by mirror resonances but also modified by appraisal mechanisms and how emotions are communicated, It further discusses how 'attainment' to film builds...

  14. Fra bog til film

    DEFF Research Database (Denmark)

    Schepelern, Peter

    2010-01-01

    Efter en historisk oversigt over samspillet mellem film og litteratur i dansk film, opstilles en råkke begreber, som filmatiseringer kan analyseres ud fra. Der ses pa det litteråre vårks status — evt. som klassiker eller bestseller. Der ses pa de centrale filmatiseringsproblemer, forhold som pråg...

  15. Malaysian Cinema, Asian Film

    NARCIS (Netherlands)

    Heide, van der William

    2002-01-01

    This title series departs from traditional studies of national cinema by accentuating the intercultural and intertextual links between Malaysian films and Asian (as well as European and American) film practices. Using cross-cultural analysis, the author characterizes Malaysia as a pluralist society

  16. Protolytic carbon film technology

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; White, C.A.

    1996-04-01

    This paper presents a technique for the deposition of polyacrylonitrile (PAN) on virtually any surface allowing carbon film formation with only the caveat that the substrate must withstand carbonization temperatures of at least 600 degrees centigrade. The influence of processing conditions upon the structure and properties of the carbonized film is discussed. Electrical conductivity, microstructure, and morphology control are also described.

  17. Film As Art.

    Science.gov (United States)

    Arnheim, Rudolf

    The thesis of this classic, the major part of which was originally published in 1933, is that the peculiar virtues of film as art derive from an exploitation of the limitations of the medium: the absence of sound, the absence of color, the lack of three-dimensional depth. Silent-film artists made virtues of these necessities and were on their way…

  18. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  19. Creative Film-Making.

    Science.gov (United States)

    Smallman, Kirk

    The fundamentals of motion picture photography are introduced with a physiological explanation for the illusion of motion in a film. Film stock formats and emulsions, camera features, and lights are listed and described. Various techniques of exposure control are illustrated in terms of their effects. Photographing action with a stationary or a…

  20. On Teaching Ethnographic Film

    Science.gov (United States)

    Clarfield, Geoffrey

    2013-01-01

    The author of this article, a developmental anthropologist, illustrates how the instructor can use ethnographic films to enhance the study of anthropology and override notions about the scope and efficacy of Western intervention in the Third World, provided the instructor places such films in their proper historical and cultural context. He…

  1. What Is Film Phenomenology?

    NARCIS (Netherlands)

    Hanich, Julian; Ferencz-Flatz, Christian

    2016-01-01

    In this article Christian Ferencz-Flatz and I try to give an answer to the question what film phenomenology actually is. We proceed in three steps. First, we provide a survey of five different research practices within current film phenomenological writing: We call them excavation, explanation, exem

  2. Construction of Meaning: Film.

    Science.gov (United States)

    Pryluck, Calvin

    1995-01-01

    Notes that film has no clear set of rules, unlike all languages, which are deductive systems interpreted according to clear sets of rules. Suggests that film is an inductive system whose interpretation is based on a general understanding of events depicted as modified by production variables such as lighting, camera angles, and the context of…

  3. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  4. Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

    Science.gov (United States)

    Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

    2016-12-01

    Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

  5. Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

    Science.gov (United States)

    Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

    2016-08-01

    Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

  6. Film Theory and Hugo Munsterberg's "The Film": A Psychological Study.

    Science.gov (United States)

    Wicclair, Mark R.

    1978-01-01

    Hugo Munsterberg's "The Film: A Psychological Study" is one of the earliest essays in the area of film theory. Unfortunately, it has remained relatively unknown since its publication in 1916. The author discusses two concepts raised by Munsterberg: the contrast between films in the theatrical mode and films in the cinematic mode.…

  7. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  8. Light Emission Properties of a Cross-Conjugated Fluorene Polymer: Demonstration of Its Use in Electro-Luminescence and Lasing Devices

    Directory of Open Access Journals (Sweden)

    Sergio Romero-Servin

    2016-02-01

    Full Text Available Light emission properties of a fluorene cross-conjugated polymer (PF–1 based on the monomer 4,7-bis[2-(9,9-dimethylfluorenyl] benzo[1,2,5]thiadiazole are reported. This polymer exhibits solubility at high concentrations, good processability into thin solid films of good quality and a broad emission band with a fluorescence quantum yield of approximately 1. Based on these features, in this paper we implemented the use of PF–1 as an active layer in polymer light-emitting diodes (PLEDs and as a laser gain medium in solution. To get insight on the conducting properties of PF–1, two different electron injectors, poly [(9,9-bis(3′-(N,N-dimethylamino propyl-2,7-fluorene-alt-2,7-(9,9–dioctylfluorene] (PFN and lithium fluoride (LiF, were used in a simple PLED architecture. PLEDs with the PFN film were found to exhibit better performance with a maximum luminous efficiency of 40 cd/A, a turn-on voltage (Von of approximately 4.5 V and a luminance maximum of 878 cd/m2 at 5.5 V, with a current density of 20 A/m2. For the lasing properties of PF–1, we found a lasing threshold of around 75 μJ and a tunability of 20 nm. These values are comparable with those of rhodamine 6G, a well-known laser dye.

  9. Film Images of Private Schools.

    Science.gov (United States)

    Resnick, David

    2000-01-01

    Examines public debate over private education in the context of the Hollywood dramatic feature film. Analyses four recent films that all portray private schools negatively. Film representation of public schools is more optimistic. Asserts that the films ignore or misrepresent three strengths of private education: effective leadership, small school…

  10. Religion og film

    DEFF Research Database (Denmark)

    Hvithamar, Annika; Eskjær, Mikkel Fugl

    2007-01-01

    Artiklen søger at stipulere en ramme for analyse af religion og film. Dels ved at række ud over den blotte konstatering af tilstedeværelse af religiøse elementer i film, dels ved at anslå en række temaer, der kan anvendes til analyse af sådanne film (individualisering, (de-)sekularisering, banal...... religion og populæreeligion) og dels ved at foreslå en model, der kan danne ramme for en kategorisering af sammenhængen mellem tekst og produktionsmæssig kontekst....

  11. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  12. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; PROVENCIO,PAULA P.; OVERMYER,DONALD L.; SIMPSON,REGINA L.; MARTINEZ-MIRANDA,L.J.

    2000-01-27

    Modest thermal annealing to 600 C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5--10%. The authors report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approximately} 15% due to the development of the nanocomposite structure.

  13. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Martinez-Miranda, L. J. [Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)

    2000-05-22

    Modest thermal annealing to 600 degree sign C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5%-10%. We report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approx}15% due to the development of the nanocomposite structure. (c) 2000 American Institute of Physics.

  14. Intermetallic semiconducting films

    CERN Document Server

    Wieder, H H

    1970-01-01

    Intermetallic Semiconducting Films introduces the physics and technology of AшВv compound films. This material is a type of a polycrystalline semiconductor that is used for galvanomagnetic device applications. Such material has a high electron mobility that is ideal for generators and magnetoresistors. The book discusses the available references on the preparation and identification of the material. An assessment of its device applications and other possible use is also enumerated. The book describes the structures and physical parts of different films. A section of the book covers the three t

  15. When Film Meets World

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    After 30 years of reform,the Chinese film industry awaits more progress To celebrate this year’s 60th anniver-sary of the founding of the People’s Republic of China, a stellar cast of China’s top filmmakers and actors are making a film temporarily named Founding a Country. The film stars many household names-Andy Lau, Jiang Wen, Ge You, Vivian Wu, and prestigious directors Chen Kaige and Feng Xiaogang-who all make appearances. Han Sanping is behind the camera.

  16. The Application of Electroluminescence Imaging to Detection The Hidden Defects in Silicon Solar Cells%电致发光成像技术在硅太阳能电池隐性缺陷检测中的应用

    Institute of Scientific and Technical Information of China (English)

    李艳华; 潘淼; 庞爱锁; 武智平; 郑兰花; 陈朝

    2011-01-01

    A method of using electroluminescence (EL) imaging to detect the hidden defects in silicon solar cells under the condition of certain bias is presented in this paper. The EL wavelength of silicon solar cells ranges from 850 nm to 1 200 nm. In the case of forward bias, the EL intensity is related to the concentration and diffusion length of minority carriers, but under the reverse bias, EL regime and illumination intensity are corresponding to defect areas and defect density of battery, respectively. The EL of solar cells can be quickly captured by silicon CCD camera, and the hidden defects of silicon solar cell can be found according to the intensity value of EL imaging. Since the EL intensity of the intrinsic deficient is more sensitive to temperature than that of the extrinsic defect, the types of defect can be checked ont by the difference of EL intensity,which responds to the change of temperature.%论述了一种利用硅太阳能电池在一定偏压下的电致发光(Electroluminescence,EL)成像来检测硅太阳能电池隐性缺陷的方法.硅太阳能电池的EL波长范围为850~1 200 nm.正向偏压下的EL光强反映了少数载流子的浓度及其扩散长度,而反向偏压下的EL区和发光强度对应于电池的缺陷区域和缺陷密度.用硅CCD相机对硅太阳能电池的EL快速成像,然后根据EL成像的明暗强度可检测出电池的隐性缺陷.由于内在缺陷处EL强度比外在缺陷处受温度的影响更敏感,所以可利用电池缺陷处EL强度随温度变化的差异来辨别缺陷的类型.

  17. The Fabrication of Miniaturised Electrode Circuitry by Offset Lithographic Printing for Novel Electroluminescent Displays%平版印刷法制作电致发光显示器的微型化电极布线

    Institute of Scientific and Technical Information of China (English)

    Jack Silver; David.J.Harrison; Kesar F.B.Breen; Robert Withnall; George R.Fern; Paul J.Marsh; Terry G.Ireland; Paul G.Harris; Peter S.A.Evans; Darren.J.Southee; Gareth I.Hay

    2008-01-01

    Flexible electroluminescent displays are reported that are produced using offset lithographic print-ing of interdigitated electrodes. The electroluminescent phosphors can be laid down using a variety of printing methods depending on particle size. Small particles can easily be incorporated into printable ink formulations. These displays utilising in-plane interdigitated electrodes are easily mass produced on flexible substrates at low cost as they require no transparent conducting oxides as anode. Furthermore the displays can be multi-coloured having ACEL emission colours ranging from green to blue for ZnS:Cu,X (X=Cl,Br, I) phosphors or orange for ZnS:Cu, Mn phosphors. In addition colour conversion materials can be used to generate other colours from the ACEL emission. Applications include back-lighting, large-area low-cost lighting, and low resolution information display technology.%平板印刷柔性的电致发光显示器的交错对插的电极.根据电致发光的荧光粉颗粒尺寸的大小采用的不同的方法将其沉积.小颗粒荧光粉分子可以很容易地与印刷油墨混合.使用这种交错对插电极的柔性显示器不需要透明的导电氧化物作为阳极,容易实现大规模生产,造价低.这种显示器使用 ACEL 可以实现多色彩显示.ACEL 可以发射出从绿光到使用ZnS:Clu,X(X=Cl,Br,I)荧光粉的蓝光,或者是到使用ZnS:Cu,Mn荧光粉的橙光.此外,还可以使用颜色转换材料以产生其他颜色的光.

  18. Characterization of Nanostructured Polymer Films

    Science.gov (United States)

    2014-12-23

    AFRL-OSR-VA-TR-2015-0059 Characterization of Nanostructured Polymer Films RODNEY PRIESTLEY TRUSTEES OF PRINCETON UNIVERSITY Final Report 12/23/2014...Report 3. DATES COVERED (From - To) 06/01/2012-08/31/2014 4. TITLE AND SUBTITLE Characterization of Nanostructured Polymer Films 5a. CONTRACT...properties is due to the film morphology, i.e., the films are nanostructured . The aim of this proposal was to understand the mechanism of film formation and

  19. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  20. Quantitative film radiography

    Energy Technology Data Exchange (ETDEWEB)

    Devine, G.; Dobie, D.; Fugina, J.; Hernandez, J.; Logan, C.; Mohr, P.; Moss, R.; Schumacher, B.; Updike, E.; Weirup, D.

    1991-02-26

    We have developed a system of quantitative radiography in order to produce quantitative images displaying homogeneity of parts. The materials that we characterize are synthetic composites and may contain important subtle density variations not discernible by examining a raw film x-radiograph. In order to quantitatively interpret film radiographs, it is necessary to digitize, interpret, and display the images. Our integrated system of quantitative radiography displays accurate, high-resolution pseudo-color images in units of density. We characterize approximately 10,000 parts per year in hundreds of different configurations and compositions with this system. This report discusses: the method; film processor monitoring and control; verifying film and processor performance; and correction of scatter effects.

  1. ANOMALOUS MAGNETIC FILMS,

    Science.gov (United States)

    Three types of anomalous nickel-iron magnetic films characterized by hysteresigraph and torque-magnetometer measurements; bitter-pattern observations; reprint from ’ Journal of Applied Physics .’

  2. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  3. Film Propaganda: Ikonografi Kekuasaan

    OpenAIRE

    Budi Irawanto

    2004-01-01

    As a modern technological invention cinema has numerous potentialities such as economic, social and political power. Fascist regimes as well as film corporations have employed cinema as a tool of propaganda to control and mobilize the masses for the sake of their power longevity. Moreover, the character of film itself is a perfect fascist medium which came from the network of proto-fascism of the twentieth century civilization. By using various genres of Indonesian cinema from different eras ...

  4. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  5. Polymer film composite transducer

    Science.gov (United States)

    Owen, Thomas E.

    2005-09-20

    A composite piezoelectric transducer, whose piezoeletric element is a "ribbon wound" film of piezolectric material. As the film is excited, it expands and contracts, which results in expansion and contraction of the diameter of the entire ribbon winding. This is accompanied by expansion and contraction of the thickness of the ribbon winding, such that the sound radiating plate may be placed on the side of the winding.

  6. My Life On Film

    OpenAIRE

    Aylett, Matthew; Briggs, Pam; Thomas, Lisa; Kerrigan, Finola; Green, David P.; Shamma, David A.

    2016-01-01

    Social media has begun to migrate from a predominantly text-based medium, through photography and into cinematography and edited video. Film is a vital medium through which we not only capture our world, but also seek to understand it. This workshop explores an emerging area of research within the CHI community that focuses on applying filmic techniques in two different ways; 1) to automatically interpret personal data and to allow users to interact with personal data, and 2) to explore film ...

  7. Min Morfars Film

    DEFF Research Database (Denmark)

    Juel, Henrik

    1957-01-01

    Reflektioner over filmhistoriebegrebet og gennemgang af konkrete filmoplevelser i 1957 og i nutiden med udgangspunkt i mødet med en gammel familiefilm. Reflektioner over valg af motiver i en social- og personhistorisk dateret film.......Reflektioner over filmhistoriebegrebet og gennemgang af konkrete filmoplevelser i 1957 og i nutiden med udgangspunkt i mødet med en gammel familiefilm. Reflektioner over valg af motiver i en social- og personhistorisk dateret film....

  8. Optical and electrical characteristics of chromium- and iron-doped zinc selenide thin film and bulk materials for optically and electrically pumped lasers

    Science.gov (United States)

    Gallian, Andrew

    This work is devoted to evaluating new laser systems based upon chromium and iron doped ZnSe structures. These systems are based upon new materials and pumping schemes. These topics can be broken down into three major subgroups: new materials based upon Cr2+:ZnSe, Fe2+:ZnSe lasers and pump sources, and electrically pumped Cr2+:ZnSe systems. Both hot-pressed ceramic and thin film Cr2+:ZnSe samples were evaluated for their potential as laser gain media. This work entailed spectroscopic analysis of both their absorption and emission spectra as well as characterizing their lifetime of luminescence. For hot-pressed ceramic Cr2+:ZnSe the samples were tested in a laser cavity and proven to be the first laser system in the mid-IR to be demonstrated based upon hot-pressed Cr2+:ZnSe. Thin film Cr2+:ZnSe was determined to have different spectroscopic characteristics for luminescence compared to reference bulk samples. This difference is attributed to the location of all of the optical centers within a Fabry-Perot cavity formed by the film surface and the wafer on which it was deposited. Fe2+:ZnSe laser demonstration at room temperature is presented. This laser operates in a spectral region of great interest for spectroscopy. To develop this laser system new pumping systems were required. Such systems as passively Q-switched Er:YSGG and Stokes Stimulated Raman Scattering from a D2 cell are described in great depth. Electrically pumped Transition Metal 2+:II-VI systems are ideal for small portable spectroscopic and scientific tools. The elimination of an optical pump source removes many complications of other systems including, complications due to having a second laser. This work was approached by modeling electrically motivated transitions with sub-band optical excitation. Lasing of Cr 2+:ZnSe was achieved using a 532 nm pump source. This result, in combination with photo-current and photo-Hall measurements, led to the development of some theories explaining possible

  9. Multiresonant layered plasmonic films

    Energy Technology Data Exchange (ETDEWEB)

    DeVetter, Brent M. [Pacific Northwest National Laboratory, Richland, Washington, United States; Bernacki, Bruce E. [Pacific Northwest National Laboratory, Richland, Washington, United States; Bennett, Wendy D. [Pacific Northwest National Laboratory, Richland, Washington, United States; Schemer-Kohrn, Alan [Pacific Northwest National Laboratory, Richland, Washington, United States; Alvine, Kyle J. [Pacific Northwest National Laboratory, Richland, Washington, United States

    2017-01-01

    Multi-resonant nanoplasmonic films have numerous applications in areas such as nonlinear optics, sensing, and tamper indication. While techniques such as focused ion beam milling and electron beam lithography can produce high-quality multi-resonant films, these techniques are expensive, serial processes that are difficult to scale at the manufacturing level. Here, we present the fabrication of multi-resonant nanoplasmonic films using a layered stacking technique. Periodically-spaced gold nanocup substrates were fabricated using self-assembled polystyrene nanospheres followed by oxygen plasma etching and metal deposition via magnetron sputter coating. By adjusting etch parameters and initial nanosphere size, it was possible to achieve an optical response ranging from the visible to the near-infrared. Singly resonant, flexible films were first made by performing peel-off using an adhesive-coated polyolefin film. Through stacking layers of the nanofilm, we demonstrate fabrication of multi-resonant films at a fraction of the cost and effort as compared to top-down lithographic techniques.

  10. Synthesis and electroluminescent properties of blue fluorescent materials based on 9,9-diethyl-N,N-diphenyl-9 H-fluoren-2-amine substituted anthracene derivatives for organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seul Bee; Kim, Chanwoo; Park, Soo Na; Kim, Young Seok [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Lee, Ho Won [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

    2015-11-30

    Four 9,9-diethyl-N,N-diphenyl-9 H-fluoren-2-amine substituted anthracene derivatives have been designed and synthesized by Suzuki cross coupling reactions. To explore the electroluminescent properties of these blue materials, multilayer blue organic light-emitting diodes were fabricated in the following device structure: indium tin oxide (180 nm)/N,N’-diphenyl-N,N’-(1-napthyl)-(1,1′-phenyl)-4,4′-diamine (50 nm)/blue emitting materials (1–4) (30 nm)/bathophenanthroline (30 nm)/lithium quinolate (2 nm)/Al (100 nm). All devices appeared excellent deep-blue emissions. Among them, a device exhibited a maximum luminance of 5686 cd/m{sup 2}, the luminous, power and external quantum efficiencies of 5.11 cd/A, 3.79 lm/W, and 4.06% with the Commission International de L'Eclairage coordinates of (0.15, 0.15) at 500 cd/m{sup 2}, respectively. - Highlights: • We synthesized blue fluorescent materials based on anthracene derivatives. • The EL efficiencies of these materials depend on the quantum yields in solid states. • These materials have great potential for applications as blue emitter in OLEDs.

  11. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer

    Energy Technology Data Exchange (ETDEWEB)

    Mo, Xiaoming; Long, Hao; Wang, Haoning; Chen, Zhao; Wan, Jiawei; Liu, Yuping; Fang, Guojia, E-mail: gjfang@whu.edu.cn [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Li, Songzhan [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430073 (China); Feng, Yamin [Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China); Ouyang, Yifang [College of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004 (China)

    2014-08-11

    We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emission at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.

  12. Capacitor film surface assessment studies

    Science.gov (United States)

    Galperin, I.; White, W.

    1985-02-01

    In the present investigation of the optical surface of the three widely used, biaxially oriented capacitor films, polypropylene, polyvinylidene fluoride, and polyester, with attention to film surface defects and thickness variation, the defects and their rate of occurrence proved traceable in terms of polymer structure, chemical grouping, and fabrication processing. Film thickness variation was small, yet differed for each film type. Film breakdown voltages have been determined, and alternative causes for the voltage values obtained are proposed. A reciprocal relation is noted between the film breakdown voltage and the dielectric constant.

  13. Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Lee-Woon; Jeon, Dae-Woo [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Polyakov, A.Y.; Govorkov, A.V. [Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Sokolov, V.N. [Department of Engineering and Ecological Geology, Moscow State University, Vorobyovygory, Moscow 119991 (Russian Federation); Smirnov, N.B. [Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Cho, Han-Su; Yun, Jin-Hyeon [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shcherbatchev, K.D. [National University of Science and Technology MISiS, Leninsky Ave. 4, Moscow 119049 (Russian Federation); Baek, Jong-Hyeob [LED R and D Division, Korea Photonics Technology Institute, Gwangju 500-779 (Korea, Republic of); Lee, In-Hwan, E-mail: ihlee@jbnu.ac.kr [School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2014-03-15

    Highlights: • Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. • InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. • Overgrown GaN films and LEDs showed lower strain and lower density of surface defects. • The overgrown LED structures showed enhanced electroluminescence efficiency. -- Abstract: Porous GaN templates were prepared by combined electrochemical etching (ECE) and back-side photoelectrochemical etching (PECE), followed by the overgrowth of GaN films and InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures. Structural, luminescent, and electrical properties of the GaN and LED structures were studied and compared with the properties of structures grown under the same conditions on templates not subjected to ECE–PECE treatment. Overgrowth of LED structures on the ECE–PECE templates reduced strain, cracking, and micropits, leading to increased internal quantum efficiency and light extraction efficiency. This luminescence enhancement was observed in overgrown GaN films, but was more pronounced for InGaN/GaN LED structures due to suppression of piezoelectric polarization field in QWs.

  14. Filming eugenics: teaching the history of eugenics through film.

    Science.gov (United States)

    Ooten, Melissa; Trembanis, Sarah

    2007-01-01

    In teaching eugenics to undergraduate students and general public audiences, film should he considered as a provocative and fruitful medium that can generate important discussions about the intersections among eugenics, gender, class, race, and sexuality. This paper considers the use of two films, A Bill of Divorcement and The Lynchburg Story, as pedagogical tools for the history of eugenics. The authors provide background information on the films and suggestions for using the films to foster an active engagement with the historical eugenics movement.

  15. Film beyond boundaries: film, migrant narratives and other media

    OpenAIRE

    Anelise Reich Corseuil

    2006-01-01

    The articles here presented are representative of the debates about the various transformational aspects of film studies, fostering the discussion about the transformations and interactions between national and international narrative forms, the interrelations between film and literature, and film with other media. The critical perspectives here presented range from an emphasis on cultural materialism, dialogism, reception theory, deconstructionism, narrative studies to film aesthetics or fil...

  16. Film Propaganda: Ikonografi Kekuasaan

    Directory of Open Access Journals (Sweden)

    Budi Irawanto

    2004-07-01

    Full Text Available As a modern technological invention cinema has numerous potentialities such as economic, social and political power. Fascist regimes as well as film corporations have employed cinema as a tool of propaganda to control and mobilize the masses for the sake of their power longevity. Moreover, the character of film itself is a perfect fascist medium which came from the network of proto-fascism of the twentieth century civilization. By using various genres of Indonesian cinema from different eras as a case study, this article argues that Indonesian propaganda films have monolithic representation which can be described as a cult of "bapakisme" (patronism, "kultur komando" (command culture, marginalisation of women' role in Indonesian revolutionary movement and demonization of progressive women organisation, and glorification of the role of Soeharto in Indonesian revolutionary movement.

  17. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  18. Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Palacios-Huerta, L.; Aceves-Mijares, M. [Electronics Department, INAOE, Apdo. 51, Puebla, Pue. 72000, México (Mexico); Cabañas-Tay, S. A.; Cardona-Castro, M. A.; Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, NL 66628, México (Mexico); Domínguez-Horna, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Bellaterra 08193, Barcelona (Spain)

    2016-07-18

    Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

  19. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  20. Nanorheology of confined polymer films

    Science.gov (United States)

    Fowler, Paul; Ilton, Mark; McGraw, Joshua D.; Dalnoki-Veress, Kari

    Liquid films with a non-uniform thickness flatten in order minimize surface energy, a process driven by surface tension and mediated by viscosity. For a viscous thin film, the time evolution of the film height profile is accurately described with lubrication theory by the capillary-driven thin film equation. Previous experiments have successfully applied the thin film equation to measure the rheological properties of polymeric liquids. Here we probe confinement effects in thin polymer films. We measure the viscosity by tracking the levelling of surface perturbations with AFM. For films with thicknesses thinner than the end-to-end distance of the molecule we observe deviations from a thin film model with bulk viscosity.

  1. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  2. Foundation for Film and Science

    Science.gov (United States)

    van der Veen, G.

    1976-01-01

    Provides a comprehensive discussion on the Stichting Film en Wetenschap, SFW (Foundation for Film and Science), in Utrecht. Various aspects of the use of audio-visual aids in university teaching are looked at in detail. (Editor/RK)

  3. Partnervalg på film

    DEFF Research Database (Denmark)

    Kramer, Mette

    2006-01-01

    Nye kognitions- og evolutionspsykologiske aspekter på kvinders filmpræferencer for romantiske film og melodramer......Nye kognitions- og evolutionspsykologiske aspekter på kvinders filmpræferencer for romantiske film og melodramer...

  4. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  5. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  6. Storyboarding an Animated Film

    DEFF Research Database (Denmark)

    Frølunde, Lisbeth

    2009-01-01

    This paper applies notions of transformation to the analysis of data on semiotic processes related to making an animated film. The data derives from a study conducted in an upper secondary school in Copenhagen with students (18 years old) participating in a week-long workshop. The paper applies...... the concept of transduction with a focus on film storyboards: how students transform ideas when working with different modes (audio, visual) of representation. Data includes discourse analysis of semiotic processes and texts, referring to Social Semiotics and the methodology of Mediated Discourse Analysis...

  7. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  8. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  9. Antikken på film

    DEFF Research Database (Denmark)

    Krasilnikoff, Jens

    2012-01-01

    Review af forskning om den græsk-romerske oldtid på film. Dertil en skitse til videre arbejde med antikken på film ud fra et historiefagligt og kulturhistorisk udgangspunkt.......Review af forskning om den græsk-romerske oldtid på film. Dertil en skitse til videre arbejde med antikken på film ud fra et historiefagligt og kulturhistorisk udgangspunkt....

  10. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  11. Film beyond boundaries: film, migrant narratives and other media Film beyond boundaries: film, migrant narratives and other media

    OpenAIRE

    Anelise Reich Corseuil

    2008-01-01

    The articles here presented are representative of the debates about the various transformational aspects of film studies, fostering the discussion about the transformations and interactions between national and international narrative forms, the interrelations between film and literature, and film with other media. The critical perspectives here presented range from an emphasis on cultural materialism, dialogism, reception theory, deconstructionism, narrative studies to film aesthetics or fil...

  12. Longevity Of Dry Film Lubricants

    Science.gov (United States)

    Kannel, J. W.; Stockwell, R. D.

    1993-01-01

    Report describes evaluation of dry film lubricants candidate for use in rotary joints of proposed Space Station. Study included experiments and theoretical analyses focused on longevity of sputtered molybdenum disulfide films and ion-plated lead films under conditions partially simulating rolling contact.

  13. Radical Pedagogy, Prison, and Film

    Science.gov (United States)

    O'Neill, Dierdre

    2015-01-01

    This article explores the work of The Inside Film project. Inside Film works with a specific group of people (prisoners and ex-prisoners) in a particular set of circumstances (in prison or on parole) exploring how film making can be used within prison education or with people who have been to prison as a means of fostering a critical engagement…

  14. Radical Pedagogy, Prison, and Film

    Science.gov (United States)

    O'Neill, Dierdre

    2015-01-01

    This article explores the work of The Inside Film project. Inside Film works with a specific group of people (prisoners and ex-prisoners) in a particular set of circumstances (in prison or on parole) exploring how film making can be used within prison education or with people who have been to prison as a means of fostering a critical engagement…

  15. Methods for producing complex films, and films produced thereby

    Energy Technology Data Exchange (ETDEWEB)

    Duty, Chad E.; Bennett, Charlee J. C.; Moon, Ji -Won; Phelps, Tommy J.; Blue, Craig A.; Dai, Quanqin; Hu, Michael Z.; Ivanov, Ilia N.; Jellison, Jr., Gerald E.; Love, Lonnie J.; Ott, Ronald D.; Parish, Chad M.; Walker, Steven

    2015-11-24

    A method for producing a film, the method comprising melting a layer of precursor particles on a substrate until at least a portion of the melted particles are planarized and merged to produce the film. The invention is also directed to a method for producing a photovoltaic film, the method comprising depositing particles having a photovoltaic or other property onto a substrate, and affixing the particles to the substrate, wherein the particles may or may not be subsequently melted. Also described herein are films produced by these methods, methods for producing a patterned film on a substrate, and methods for producing a multilayer structure.

  16. Esilinastub film Kursi koolkonnast

    Index Scriptorium Estoniae

    2005-01-01

    Tartu kunstimajas esilinastub täna dokumentaalfilm kunstnike rühmitusest "Kursi koolkonna fenomen" : stsenaristid Ants Juske ja Ilmar Kruusamäe : režissöörid Rein Raamat ja Peeter Brambat : operaatorid Arvo Vilu ja Erik Norkroos : Raamat-Film 2005

  17. Filmens krop, kroppens film

    DEFF Research Database (Denmark)

    Moestrup, Steffen Damkjær

    2014-01-01

    Vi har i nyere tid set en lind strøm af dokumentarfilm, der iscenesætter afvigende kroppe. Det gælder film som Shape of the Shapeless (2010), Herbstgold (2010), Beating Time (2010), Planet of Snail (2011), Whole (2003) og Kinbaku – the Art of Bondage (2009). Fælles for filmene er, at de dels...

  18. Surrealism and Film.

    Science.gov (United States)

    Matthews, J. H.

    This book is a critical, genre study of surrealist films including a general discussion of the backgrounds, influences, and overall traits of surrealism as a mode of artistic response to an absurdist world. Citing the impetus of Jacques Vache and Andre Breton as the originators of surrealism, the work expands upon the themes of fractured realism…

  19. Bond percolation in films

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1988-04-01

    Bond percolation in films with simple cubic structure is considered. It is assumed that the probability of a bond being present between nearest-neighbor sites depends on the distances to surfaces. Based on the relation between the Potts model and the bond percolation model, and using the mean-field approximation, the phase diagram and profiles of the percolation probability have been obtained.

  20. Thirty Unforgettable Chinese Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The film portrays in a realistic mode to the life some ordinary people living at the bottom of society including prostitutes, singing girls, trumpeter,newspaper pedlars, barbers and news-stand owners, depicting their bitter life and miserable fate. It shows profound humanistic solicitude.

  1. Zapping thin film transistors

    NARCIS (Netherlands)

    Golo-Tosic, N.; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD

  2. FILM I KUFFERTEN

    DEFF Research Database (Denmark)

    Johansen, Stine Liv; Hansen, Adriana Maria

    2013-01-01

    kulturen, medierne er i kulturen – også i legekulturen. Denne rapport beskriver og undersøger et særligt eksempel på medialiseret leg. På baggrund af feltstudier i fem danske børnehaver, hvor et nyt filmpædagogisk materiale – Film i Kufferten - introduceres, er det rapportens formål at eksemplificere...

  3. "Gudbai, Lenin!" - film goda

    Index Scriptorium Estoniae

    2003-01-01

    Euroopa Filmiakadeemia tänavused auhinnasaajad : Saksa film "Good bye, Lenin!" võitis 6 auhinda, kaasaarvatud parima filmi tiitel. Parim režissöör - Lars von Trier "Dogville'i" eest, aasta üllatus - Andrei Zvjagintsevi "Tagasitulek"

  4. Diamond films: Historical perspective

    Energy Technology Data Exchange (ETDEWEB)

    Messier, R. [Pennsylvania State Univ., University Park (United States)

    1993-01-01

    This section is a compilation of notes and published international articles about the development of methods of depositing diamond films. Vapor deposition articles are included from American, Russian, and Japanese publications. The international competition to develop new deposition methodologies is stressed. The current status of chemical vapor deposition of diamond is assessed.

  5. Oxide Films RF Applications

    Science.gov (United States)

    2006-06-01

    should be noted that epitaxial rutile TiO 2 films were observed for C-cut and R-cut sapphire , as well as ( 110)-STO. Figure 2 shows RHEED images, taken...field TEM of the STO substrate grown by Verneuil method. The dark lines correspond to dislocations, their density was estimated at 4.3 x 108/cm2. In the

  6. Intercultural Training with Films

    Science.gov (United States)

    Roell, Christine

    2010-01-01

    Films are a great medium to use not only to practice English, but also to facilitate intercultural learning. Today English is a global language spoken by people from many countries and cultural backgrounds. Since culture greatly impacts communication, it is helpful for teachers to introduce lessons and activities that reveal how different…

  7. Ferroelectric Thin Film Development

    Science.gov (United States)

    2003-12-10

    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  8. Korupsi dalam Film Indonesia

    Directory of Open Access Journals (Sweden)

    Rhafidilla Vebrynda

    2015-01-01

    Full Text Available Abstract: Corruption has been rooted and institutionalized in our smallest environment. The campaign to fight corruption comes from various organizations through numerous varieties of means. This study looks at the Komisi Pemberantasan Korupsi (KPK campaign through a film entitled “Kita Versus Korupsi”. This study uses narrative analysis by looking at the elements of narrative, narrative structure, the analysis model of aktan and the Greimas’ semiotic square. It is found that the film narrates corruption as trouble and resistor. The various forms of corruption are narrated using the combination of techniques scene, dialogue and flashback. Abstrak: Korupsi sudah mengakar dan melembaga hingga lingkungan terkecil kita. Kampanye untuk melawannya datang dari berbagai pihak melalui beragam sarana. Penelitian ini melihat kampanye Komisi Pemberantasan Korupsi (KPK melalui film “Kita Versus Korupsi”. Menggunakan metode analisis naratif dengan melihat unsur naratif, struktur naratif, analisis model aktan dan oposisi segi empat Algirdas Greimas, penelitian ini menemukan bahwa korupsi dinarasikan sebagai gangguan dan penghambat. Film tersebut selalu menghadapkan pelaku korupsi dengan pihak yang tidak korupsi secara langsung. Latar belakang pengetahuan tokoh utama tentang korupsi berpengaruh dalam pengambilan keputusannya. Berbagai bentuk korupsi dinarasikan dengan teknik penggabungan scene, dialog dan flashback.

  9. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  10. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  11. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  12. Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

    Science.gov (United States)

    Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

    2016-08-01

    Blue/pink/purple electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)-Si-O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler-Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

  13. Analysing the effect of crystal size and structure in highly efficient CH3NH3PbI3 perovskite solar cells by spatially resolved photo- and electroluminescence imaging.

    Science.gov (United States)

    Mastroianni, S; Heinz, F D; Im, J-H; Veurman, W; Padilla, M; Schubert, M C; Würfel, U; Grätzel, M; Park, N-G; Hinsch, A

    2015-12-14

    CH3NH3PbI3 perovskite solar cells with a mesoporous TiO2 layer and spiro-MeOTAD as a hole transport layer (HTL) with three different CH3NH3I concentrations (0.032 M, 0.044 M and 0.063 M) were investigated. Strong variations in crystal size and morphology resulting in diversified cell efficiencies (9.2%, 16.9% and 12.3%, respectively) were observed. The physical origin of this behaviour was analysed by detailed characterization combining current-voltage curves with photo- and electroluminescence (PL and EL) imaging as well as light beam induced current measurements (LBIC). It was found that the most efficient cell shows the highest luminescence and the least efficient cell is most strongly limited by non-radiative recombination. Crystal size, morphology and distribution in the capping layer and in the porous scaffold strongly affect the non-radiative recombination. Moreover, the very non-uniform crystal structure with multiple facets, as evidenced by SEM images of the 0.032 M device, suggests the creation of a large number of grain boundaries and crystal dislocations. These defects give rise to increased trap-assisted non-radiative recombination as is confirmed by high-resolution μ-PL images. The different imaging techniques used in this study prove to be well-suited to spatially investigate and thus correlate the crystal morphology of the perovskite layer with the electrical and radiative properties of the solar cells and thus with their performance.

  14. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  15. Professor Camillo Negro's Neuropathological Films.

    Science.gov (United States)

    Chiò, Adriano; Gianetto, Claudia; Dagna, Stella

    2016-01-01

    Camillo Negro, Professor in Neurology at the University of Torino, was a pioneer of scientific film. From 1906 to 1908, with the help of his assistant Giuseppe Roasenda and in collaboration with Roberto Omegna, one of the most experienced cinematographers in Italy, he filmed some of his patients for scientific and educational purposes. During the war years, he continued his scientific film project at the Military Hospital in Torino, filming shell-shocked soldiers. In autumn 2011, the Museo Nazionale del Cinema, in partnership with the Faculty of Neurosciences of the University of Torino, presented a new critical edition of the neuropathological films directed by Negro. The Museum's collection also includes 16 mm footage probably filmed in 1930 by Doctor Fedele Negro, Camillo's son. One of these films is devoted to celebrating the effects of the so-called "Bulgarian cure" on Parkinson's disease.

  16. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  17. Ellipsometry of anodic film growth

    Energy Technology Data Exchange (ETDEWEB)

    Smith, C.G.

    1978-08-01

    An automated computer interpretation of ellisometer measurements of anodic film growth was developed. Continuous mass and charge balances were used to utilize more fully the time dependence of the ellipsometer data and the current and potential measurements. A multiple-film model was used to characterize the growth of films which proceeds via a dissolution--precipitation mechanism; the model also applies to film growth by adsorption and nucleation mechanisms. The characteristic parameters for film growth describe homogeneous and heterogeneous crystallization rates, film porosities and degree of hydration, and the supersaturation of ionic species in the electrolyte. Additional descriptions which may be chosen are patchwise film formation, nonstoichiometry of the anodic film, and statistical variations in the size and orientation of secondary crystals. Theories were developed to describe the optical effects of these processes. An automatic, self-compensating ellipsometer was used to study the growth in alkaline solution of anodic films on silver, cadmium, and zinc. Mass-transport conditions included stagnant electrolyte and forced convection in a flow channel. Multiple films were needed to characterize the optical properties of these films. Anodic films grew from an electrolyte supersatuated in the solution-phase dissolution product. The degree of supersaturation depended on transport conditions and had a major effect on the structure of the film. Anodic reaction rates were limited by the transport of charge carriers through a primary surface layer. The primary layers on silver, zinc, and cadmium all appeared to be nonstoichiometric, containing excess metal. Diffusion coefficients, transference numbers, and the free energy of adsorption of zinc oxide were derived from ellipsometer measurements. 97 figures, 13 tables, 198 references.

  18. Ellipsometry of anodic film growth

    Energy Technology Data Exchange (ETDEWEB)

    Smith, C.G.

    1978-08-01

    An automated computer interpretation of ellisometer measurements of anodic film growth was developed. Continuous mass and charge balances were used to utilize more fully the time dependence of the ellipsometer data and the current and potential measurements. A multiple-film model was used to characterize the growth of films which proceeds via a dissolution--precipitation mechanism; the model also applies to film growth by adsorption and nucleation mechanisms. The characteristic parameters for film growth describe homogeneous and heterogeneous crystallization rates, film porosities and degree of hydration, and the supersaturation of ionic species in the electrolyte. Additional descriptions which may be chosen are patchwise film formation, nonstoichiometry of the anodic film, and statistical variations in the size and orientation of secondary crystals. Theories were developed to describe the optical effects of these processes. An automatic, self-compensating ellipsometer was used to study the growth in alkaline solution of anodic films on silver, cadmium, and zinc. Mass-transport conditions included stagnant electrolyte and forced convection in a flow channel. Multiple films were needed to characterize the optical properties of these films. Anodic films grew from an electrolyte supersatuated in the solution-phase dissolution product. The degree of supersaturation depended on transport conditions and had a major effect on the structure of the film. Anodic reaction rates were limited by the transport of charge carriers through a primary surface layer. The primary layers on silver, zinc, and cadmium all appeared to be nonstoichiometric, containing excess metal. Diffusion coefficients, transference numbers, and the free energy of adsorption of zinc oxide were derived from ellipsometer measurements. 97 figures, 13 tables, 198 references.

  19. Reading through Films

    Directory of Open Access Journals (Sweden)

    Madhavi Gayathri Raman

    2016-02-01

    Full Text Available This paper captures the design of a comprehensive curriculum incorporating the four skills based exclusively on the use of parallel audio-visual and written texts. We discuss the use of authentic materials to teach English to Indian undergraduates aged 18 to 20 years. Specifically, we talk about the use of parallel reading (screen-play and audio-visual texts (Shawshank Redemption, and Life is Beautiful, A Few Good Men and Lion King drawn from popular culture in the classroom as an effective teaching medium. Students were gradually introduced to films based on novels with extracts from the original texts (Schindler’s List, Beautiful Mind for extended reading and writing practice. We found that students began to pay more attention to aspects such as pronunciation, intonational variations, discourse markers and vocabulary items (phrasal verbs, synonyms, homophones, and puns. Keywords: Reading, films, popular culture, ESL classroom, language skills

  20. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  1. GHz magnetic film inductors

    CERN Document Server

    Korenivski, V

    2000-01-01

    Use of magnetic films for miniaturization of planar inductors operating at ultra-high frequencies is reviewed. Materials and design aspects determining the efficiency of the devices are analyzed. Mechanisms involved in magnetic dissipation and their role in limiting the device operation frequency range and quality factor are discussed. Typical inductor geometries are considered. A magnetically sandwiched strip inductor is argued to hold a promise for GHz applications.

  2. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  3. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  4. Daylight Redirecting Window Films

    Science.gov (United States)

    2013-09-01

    a range of solar altitudes but their effectiveness has not been proven. Even more complex solutions involve roof mounted, sun tracking heliostats ...electricity rates and climate (range of 3-35 years). NPV was positive and SIR ranged from 1.4 to 2.58 Potential to reduce lighting energy use...and more cheerful. E. It was necessary to position an optically diffusing surface in front of microstructured film adhered to the glazing surface to

  5. Film Ace Takes Gold

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    "Really, I never, never expected to win this," said Chinese director Jia Zhangke on hearing he had taken the top award for his movie Still Life (Sanxia Haoren) at the Venice Film Festival, on September 9. A surprise late entry, Still Life quickly emerged as the favorite and the Gold Lion was again hugged by Chinese. The well-known Chinese director Zhang Yimou won the same award back in 1999, for Not One Less-also a

  6. Darwinisme, film og filmteori

    DEFF Research Database (Denmark)

    Grodal, Torben Kragh

    2010-01-01

    Artiklen giver først en oversigt over evolutionshistorisk baseret kulturanalyse og dennes tilknytning til neuropsykologi, herunder evolutionsteoretiske studier af religion og andre overnaturlige forestillingssystemer. Derefter redegøres der kort for, hvorledes Darwinismen har  stødt på modstand, ...... kulturhistoriske baggrund for retssag og film.   Keywords: evolutionsteori, filmteori, evolutionær religionsanalyse, Inherit the wind.     Udgivelsesdato: april 2010...

  7. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  8. films using atomic layer deposition

    Science.gov (United States)

    Chervinskii, Semen; Matikainen, Antti; Dergachev, Alexey; Lipovskii, Andrey A.; Honkanen, Seppo

    2014-08-01

    We fabricated self-assembled silver nanoisland films using a recently developed technique based on out-diffusion of silver from an ion-exchanged glass substrate in reducing atmosphere. We demonstrate that the position of the surface plasmon resonance of the films depends on the conditions of the film growth. The resonance can be gradually shifted up to 100 nm towards longer wavelengths by using atomic layer deposition of titania, from 3 to 100 nm in thickness, upon the film. Examination of the nanoisland films in surface-enhanced Raman spectrometry showed that, in spite of a drop of the surface-enhanced Raman spectroscopy (SERS) signal after the titania spacer deposition, the Raman signal can be observed with spacers up to 7 nm in thickness. Denser nanoisland films show slower decay of the SERS signal with the increase in spacer thickness.

  9. Frequency mixer having ferromagnetic film

    Energy Technology Data Exchange (ETDEWEB)

    Khitun, Alexander; Roshchin, Igor V.; Galatsis, Kosmas; Bao, Mingqiang; Wang, Kang L.

    2016-03-29

    A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.

  10. Individualistic Heroism in American Films

    Institute of Scientific and Technical Information of China (English)

    李泽茜

    2016-01-01

    This thesis investigates the features of heroes and individualistic heroism in different kinds of American films. The former examines the commons of heroes through illustration. The latter categories the typical types of American films and explores individualistic heroism in them. This article shows that individualistic heroism is taken into people's heart and influence their mindsets, and points out that America advertises its value through films to affect the whole world.

  11. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  12. Film beyond boundaries: film, migrant narratives and other media

    Directory of Open Access Journals (Sweden)

    Anelise Reich Corseuil

    2006-04-01

    Full Text Available The articles here presented are representative of the debates about the various transformational aspects of film studies, fostering the discussion about the transformations and interactions between national and international narrative forms, the interrelations between film and literature, and film with other media. The critical perspectives here presented range from an emphasis on cultural materialism, dialogism, reception theory, deconstructionism, narrative studies to film aesthetics or film genre, and can be grouped in three major interrelated areas of film studies: adaptation studies, representation and aesthetics, and film and other media. All of them enable a critical perspective as regards the fluidity of the boundaries separating film from other media, such as literature, television, DVDs, and video games, as newer narrative forms that are incorporated by film, and the transformations in terms of aesthetics and forms of representation in contemporary film and media (the transgeneric nature of film, the interrelations between national and international cinemas, and the demands for a broader perception of the overwhelming mediations of the image in our contemporary society. Moreover, the articles are inserted within recent critical debates on adaptation, digital media and national and transnational cinema (Naremore, Sobchack, Druckery and Williams. All articles combine important theoretical concerns with the analysis of specific films. Robert Stam's “Teoria e Prática da Adaptação: da Fidelidade à Intertextualidade” (“Theory and the practice of adaptation: from fidelity to intertextuality” offers a rich perspective on the issue of adaptation in its relationship with critical theory. He analyses the changing critical views on adaptation, which go from the priority given to the canonic literary text, as an origin, to a more fluid, intertextual and dialogical approach to film adaptation. Drawing from Bakhtin's concept of dialogism

  13. Probing space charge effect on electroluminescence of indium tin oxide (ITO)/N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4, 4′-diamine (α-NPD)/tris(8-hydroxy-quinolinato) aluminum (III) (Alq{sub 3})/Al diodes by time-resolved electric-field-induced optical second-harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Sadakata, Atsuo; Osada, Kenshiro; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp

    2014-03-03

    By using time-resolved electric-field-induced optical second-harmonic generation measurement, we studied the electroluminescence (EL) mechanism which is activated in double-layer organic light-emitting diodes (indium tin oxide/N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (α-NPD)/tris(8-hydroxy-quinolinato) aluminum (III) (Alq{sub 3})/Al) in the high frequency region with application of AC square voltages at various duty-ratios. Results showed that holes were accumulated at the α-NPD/Alq{sub 3} interface in proportion to the duty-ratio, and corresponded well to the increasing EL enhancement at the high frequency. Our previous proposed model on the EL enhancement assisted by electron injection from the Al electrode in the presence of the space charge field was well confirmed. - Highlights: • We studied space charge (SC) effects in double-layer organic light emitting diodes. • The second-harmonic generation measurement was used to directly probe the SC field. • Space charge fields due to interfacial accumulated charge were verified. • We showed that SC electric fields contribute to electroluminescence emissions.

  14. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  15. A philosophy of film education

    OpenAIRE

    Perez, Ralph

    2007-01-01

    This dissertation focuses on the development of a philosophy of film education. Why film? Films are a rich source of enjoyment for many of us; however, they can also give us insight into the world beyond our immediate experience and can, and often do inspire us, shock us, or make us rethink our assumptions about the world. I argue that film can be an agent of change. Everyday consumers can draw knowledge and self-identity from the mythic content of motion pictures and television programs. Far...

  16. Visible emission from Er-doped SnO2 thin films deposited by sol-gel Emissão no visível de filmes finos, depositados via sol-gel, de SnO2 dopados com Er

    Directory of Open Access Journals (Sweden)

    L. P. Ravaro

    2007-06-01

    Full Text Available Emission from Er-doped SnO2 thin film deposited via sol-gel by the dip coating technique is obtained in the range 500-700 nm with peak at 530 nm (green. Electron-hole generation in the tin dioxide matrix is used to promote the rare-earth ion excitation. Evaluation of crystallite dimensions through X-ray diffraction results leads to nanoscopic size, what could play a relevant role in the emission spectra. The electron-hole mechanism is also responsible for the excitation of the transition in the 1540 nm range in powders obtained from the same precursor solution of films. The thin film matrix presents a very useful shape for technological application, since it allows integration in optical devices and the application of electric fields to operate electroluminescent devices.Foi obtida emissão de filmes finos de SnO2 dopados com Er no intervalo 500-700 nm, com pico em 530 nm (verde. Esses filmes foram depositados pela técnica de molhamento via sol-gel. A geração de pares elétron-buraco na matriz de SnO2 é usada para promover a excitação do íon terra-rara. A avaliação do tamanho dos cristalitos por meio de resultados de difração de raios X indica dimensões nanoscópicas, o que pode ser relevante para a interpretação do espectro de emissão. O mecanismo de excitação elétron-buraco é também responsável pela excitação da transição no intervalo que inclui 1540 nm em pós obtidos da mesma solução precursora dos filmes. Filmes finos constituem um formato muito útil para aplicações tecnológicas, desde que permite integração em dispositivos ópticos e a aplicação de campos elétricos para operar dispositivos eletroluminescentes.

  17. Film scoring today - Theory, practice and analysis

    OpenAIRE

    Flach, Paula Sophie

    2012-01-01

    This thesis considers film scoring by taking a closer look at the theoretical discourse throughout the last decades, examining current production practice of film music and showcasing a musical analysis of the film Inception (2010).

  18. Film beyond boundaries: film, migrant narratives and other media Film beyond boundaries: film, migrant narratives and other media

    Directory of Open Access Journals (Sweden)

    Anelise Reich Corseuil

    2008-04-01

    Full Text Available The articles here presented are representative of the debates about the various transformational aspects of film studies, fostering the discussion about the transformations and interactions between national and international narrative forms, the interrelations between film and literature, and film with other media. The critical perspectives here presented range from an emphasis on cultural materialism, dialogism, reception theory, deconstructionism, narrative studies to film aesthetics or film genre, and can be grouped in three major interrelated areas of film studies: adaptation studies, representation and aesthetics, and film and other media. All of them enable a critical perspective as regards the fluidity of the boundaries separating film from other media, such as literature, television, DVDs, and video games, as newer narrative forms that are incorporated by film, and the transformations in terms of aesthetics and forms of representation in contemporary film and media (the transgeneric nature of film, the interrelations between national and international cinemas, and the demands for a broader perception of the overwhelming mediations of the image in our contemporary society. Moreover, the articles are inserted within recent critical debates on adaptation, digital media and national and transnational cinema (Naremore, Sobchack, Druckery and Williams. All articles combine important theoretical concerns with the analysis of specific films. Robert Stam's “Teoria e Prática da Adaptação: da Fidelidade à Intertextualidade” (“Theory and the practice of adaptation: from fidelity to intertextuality” offers a rich perspective on the issue of adaptation in its relationship with critical theory. He analyses the changing critical views on adaptation, which go from the priority given to the canonic literary text, as an origin, to a more fluid, intertextual and dialogical approach to film adaptation. Drawing from Bakhtin's concept of

  19. Obsolescence and Film Restoration: The case of Colored Silent Films

    NARCIS (Netherlands)

    Fossati, G.

    2013-01-01

    Elsewhere I have discussed the transitional nature of film and argued that the current shift from analog to digital technology is one of the many transitional phases that film has experienced in its history as a technology, a popular form of entertainment and art. The obsolescence brought about by t

  20. Radiation grafting on natural films

    Science.gov (United States)

    Lacroix, M.; Khan, R.; Senna, M.; Sharmin, N.; Salmieri, S.; Safrany, A.

    2014-01-01

    Different methods of polymer grafting using gamma irradiation are reported in the present study for the preparation of newly functionalized biodegradable films, and some important properties related to their mechanical and barrier properties are described. Biodegradable films composed of zein and poly(vinyl alcohol) (PVA) were gamma-irradiated in presence of different ratios of acrylic acid (AAc) monomer for compatibilization purpose. Resulting grafted films (zein/PVA-g-AAc) had their puncture strength (PS=37-40 N mm-1) and puncture deformation (PD=6.5-9.8 mm) improved for 30% and 50% PVA in blend, with 5% AAc under 20 kGy. Methylcellulose (MC)-based films were irradiated in the presence of 2-hydroxyethyl methacrylate (HEMA) or silane, in order to determine the effect of monomer grafting on the mechanical properties of films. It was found that grafted films (MC-g-HEMA and MC-g-silane) using 35% monomer performed higher mechanical properties with PS values of 282-296 N mm-1 and PD of 5.0-5.5 mm under 10 kGy. Compatibilized polycaprolactone (PCL)/chitosan composites were developed via grafting silane in chitosan films. Resulting trilayer grafted composite film (PCL/chitosan-g-silane/PCL) presented superior tensile strength (TS=22 MPa) via possible improvement of interfacial adhesion (PCL/chitosan) when using 25% silane under 10 kGy. Finally, MC-based films containing crystalline nanocellulose (CNC) as a filling agent were prepared and irradiated in presence of trimethylolpropane trimethacrylate (TMPTMA) as a grafted plasticizer. Grafted films (MC-g-TMPTMA) presented superior mechanical properties with a TS of 47.9 MPa and a tensile modulus (TM) of 1792 MPa, possibly due to high yield formation of radicals to promote TMPTMA grafting during irradiation. The addition of CNC led to an additional improvement of the barrier properties, with a significant 25% reduction of water vapor permeability (WVP) of grafted films.